WorldWideScience

Sample records for uhf capacitive silicon

  1. Opening of K+ channels by capacitive stimulation from silicon chip

    Science.gov (United States)

    Ulbrich, M. H.; Fromherz, P.

    2005-10-01

    The development of stable neuroelectronic systems requires a stimulation of nerve cells from semiconductor devices without electrochemical effects at the electrolyte/solid interface and without damage of the cell membrane. The interaction must rely on a reversible opening of voltage-gated ion channels by capacitive coupling. In a proof-of-principle experiment, we demonstrate that Kv1.3 potassium channels expressed in HEK293 cells can be opened from an electrolyte/oxide/silicon (EOS) capacitor. A sufficient strength of electrical coupling is achieved by insulating silicon with a thin film of TiO2 to achieve a high capacitance and by removing NaCl from the electrolyte to enhance the resistance of the cell-chip contact. When a decaying voltage ramp is applied to the EOS capacitor, an outward current through the attached cell membrane is observed that is specific for Kv1.3 channels. An open probability up to fifty percent is estimated by comparison with a numerical simulation of the cell-chip contact.

  2. Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

    2008-01-01

    "Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

  3. 3D simulations and modeling of new low capacitance silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Bo; Li, Yu Yun [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China); Li, Zheng, E-mail: zhengli58@gmail.com [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China)

    2016-09-21

    With signal to noise ratio (S/N) being a key parameter of a high performance detector, reducing the detector noise has been one of the main tasks in detector development. A new low capacitance silicon pixel detector is proposed, which is based on a new electrode geometry with reduced effective electrode area while keeping the sensitive volume unchanged. Detector electrical characteristics including electrostatic potential, electric field, full depletion voltage, and capacitance have been simulated in detail using a 3D TCAD tool. From these simulations and calculations, we confirm that the new detector structure has a much reduced capacitance (by a factor of 3) as compared to the traditional pixel detectors with the same sensitive volume. This reduction in detector capacitance can certainly improve the detector signal to noise ratio. However, the full depletion voltage for the new structure is larger than that of the traditional one due to the small electrode effect.

  4. Pulse power applications of silicon diodes in EML capacitive pulsers

    Science.gov (United States)

    Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

    1993-01-01

    Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

  5. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

    International Nuclear Information System (INIS)

    Darwich, R.; Roca i Cabarrocas, P.

    2011-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

  6. Particulate-free porous silicon networks for efficient capacitive deionization water desalination.

    Science.gov (United States)

    Metke, Thomas; Westover, Andrew S; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L

    2016-04-22

    Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon - a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes.

  7. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  8. Particulate-free porous silicon networks for efficient capacitive deionization water desalination

    Science.gov (United States)

    Metke, Thomas; Westover, Andrew S.; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L.

    2016-01-01

    Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon – a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes. PMID:27101809

  9. EPR and transient capacitance studies on electron-irradiated silicon solar cells

    Science.gov (United States)

    Lee, Y. H.; Cheng, L. J.; Mooney, P. M.; Corbett, J. W.

    1977-01-01

    One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

  10. Self-bridging of vertical silicon nanowires and a universal capacitive force model for spontaneous attraction in nanostructures.

    Science.gov (United States)

    Sun, Zhelin; Wang, Deli; Xiang, Jie

    2014-11-25

    Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems.

  11. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  12. A bipolar monolithic preamplifier for high-capacitance SSC [Superconducting Super Collider] silicon calorimetry

    International Nuclear Information System (INIS)

    Britton, C.L. Jr.; Kennedy, E.J.; Bugg, W.M.

    1990-01-01

    This paper describes a preamplifier designed and fabricated specifically to address the requirements of silicon calorimetry for the Superconducting Super Collider (SSC). The topology and its features are discussed in addition to the design methodology employed. The simulated and measured results for noise, power consumption, and speed are presented. Simulated an measured data for radiation damage effects as well as data for post-damage annealing are also presented. 8 refs., 7 figs., 2 tabs

  13. INFLUENCE OF ELECTROPOLYMERIZATION METHOD ON MORPHOLOGIES AND CAPACITIVE PROPERTIES OF POLYPYRROLE FILMS GROWING ON SILICON

    OpenAIRE

    IMENE CHIKOUCHE; ALI SAHARI; AHMED ZOUAOUI

    2014-01-01

    Two methods of Pyrrole electropolymerization were investigated to prepare polypyrrole films growing onto n-doped silicon n-Si (111): Polypyrrole films prepared by galvanostatic method exhibits toroidal morphology for thin films, and mixture of toroidal and globular morphologies for thick films. Polypyrrole films obtained from this method were characterized by lower surface roughness. Electropolymerization of pyrrole by potentiodynamic method provided Polypyrrole films with beans-like structur...

  14. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

    2015-09-21

    We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

  15. UHF RFID technologies for identification and traceability

    CERN Document Server

    Laheurte, Jean-Marc; Paret, Dominique; Loussert, Christophe

    2014-01-01

    UHF Radio Frequency Identification (RFID) is an electronic tagging technology that allows an object, place or person to be automatically identified at a distance without a direct line-of-sight using a radio wave exchange. Applications include inventory tracking, prescription medication tracking and authentication, secure automobile keys, and access control for secure facilities. This book begins with an overview of UHF RFID challenges describing the applications, markets, trades and basic technologies. It follows this by highlighting the main features distinguishing UHF (860MHz-960MHz) and HF

  16. A Broadband UHF Tag Antenna For Near-Field and Far-Field RFID Communications

    Directory of Open Access Journals (Sweden)

    M. Dhaouadi

    2014-12-01

    Full Text Available The paper deals with the design of passive broadband tag antenna for Ultra-High Frequency (UHF band. The antenna is intended for both near and far fields Radio Frequency Identification (RFID applications. The meander dipole tag antenna geometry modification is designed for frequency bandwidth increasing. The measured bandwidth of the proposed broadband Tag antenna is more than 140 MHz (820–960 MHz, which can cover the entire UHF RFID band. A comparison between chip impedance of datasheet and the measured chip impedance has been used in our simulations. The proposed progressive meandered antenna structure, with an overall size of 77 mm × 14 mm × 0.787 mm, produces strong and uniform magnetic field distribution in the near-field zone. The antenna impedance is matched to common UHF chips in market simply by tuning its capacitive and inductive values since a perfect matching is required in the antenna design in order to enhance the near and the far field communications. Measurements confirm that the designed antenna exhibits good performance of Tag identification for both near-field and far-field UHF RFID applications.

  17. Development of micro capacitive accelerometer for subsurface microseismic measurement. Second Report; Micromachining ni yoru chika danseiha kenshutsu no tame no silicone yoryogata kasokudo sensor no seisaku. 2

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Lim, G; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan)

    1997-10-22

    Micromachining-aided manufacture is under way of a silicon capacitive accelerator sensor, high in sensitivity and broad in bandwidth, for detecting subsurface microseismic waves. The sensor detects acceleration by use of changes in capacities of the top and bottom capacitors generated when a spring-supported weight experiences displacement upon application of acceleration to the said weight. A diode bridge circuit is employed as the circuit for detecting acceleration. As for sensitivity of the sensor, when the virtual noise inputted into the electronic circuit is presumed at 1{mu}V and the circuit driving voltage at 5V, the sensor minimum detectability will be 2.5mgal in the presence of a 3{mu}m gap between the weight and an electrode plate. The natural vibration frequency is set at 1kHz. Such specifications may be realized using the current micromachining technology, and possibilities are that the bandwidth will be further expanded when the sensor is used in a servo-type configuration. The effort is still at the stage of acceleration sensor manufacturing, with a stopper just formed for the silicon weight. 9 refs., 6 figs., 1 tab.

  18. Integration of IP-Packet Data Transfers Within UHF DAMA

    National Research Council Canada - National Science Library

    Huckell, Gary

    1998-01-01

    ...). The existing military standards for UHF DAMA do not provide for efficient UHF resource utilization among users wanting WWW type data access characterized by dynamically changing data rate needs for each user...

  19. 47 CFR 74.733 - UHF translator signal boosters.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false UHF translator signal boosters. 74.733 Section... Translator, and TV Booster Stations § 74.733 UHF translator signal boosters. (a) The licensee of a UHF television broadcast translator station may be authorized to operate one or more signal boosters for the...

  20. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

    International Nuclear Information System (INIS)

    Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

    1991-01-01

    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

  1. Development of micro capacitive accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha kenshutsu no tame no silicon yoryogata kasokudo sensor no seisaku

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-05-27

    A silicon capacitive accelerometer was fabricated to detect subsurface elastic waves by using micromachining technology. Characteristics required for it call for capability of detecting acceleration with amplitudes from 0.1 to 1 gal and flat amplitude characteristics in frequency bands of 10 Hz to several kHz. For the purpose of measuring transition phenomena, linear phase characteristics in the required bands must be guaranteed, cross sensitivity must be small, and resistance to water, pressure and heat is demanded. Sensitivity of the sensor is determined finally by noise level in a detection circuit. The sensor`s minimum detection capability was 40 mgal in the case of the distance between a weight and an electrode being 3 {mu}m. This specification value is a value realizable by the current micromachining technology. Dimensions for the weight and other members were decided with the natural frequency to make band width 2 kHz set to 4 kHz. Completion of the product has not been achieved yet, however, because of a problem that the weight gets stuck on the electrode plate in anode bonding in the assembly process. 7 refs., 5 figs., 1 tab.

  2. RTD application in low power UHF rectifiers

    International Nuclear Information System (INIS)

    Sinyakin, V Yu; Makeev, M O; Meshkov, S A

    2016-01-01

    In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. Possibility of RFID passive tag sensitivity increase up to 10 times by means of RTD use in HF signal rectifier in comparison with tags based on Schottky barrier diode is shown. (paper)

  3. A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

    International Nuclear Information System (INIS)

    Dong Linxi; Chen Jindan; Huo Weihong; Li Yongjie; Sun Lingling; Yan Haixia

    2009-01-01

    The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30: 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.

  4. A p-nitroaniline redox-active solid-state electrolyte for battery-like electrochemical capacitive energy storage combined with an asymmetric supercapacitor based on metal oxide functionalized β-polytype porous silicon carbide electrodes.

    Science.gov (United States)

    Kim, Myeongjin; Yoo, Jeeyoung; Kim, Jooheon

    2017-05-23

    A unique redox active flexible solid-state asymmetric supercapacitor with ultra-high capacitance and energy density was fabricated using a composite comprising MgCo 2 O 4 nanoneedles and micro and mesoporous silicon carbide flakes (SiCF) (SiCF/MgCo 2 O 4 ) as the positive electrode material. Due to the synergistic effect of the two materials, this hybrid electrode has a high specific capacitance of 516.7 F g -1 at a scan rate of 5 mV s -1 in a 1 M KOH aqueous electrolyte. To obtain a reasonable matching of positive and negative electrode pairs, a composite of Fe 3 O 4 nanoparticles and SiCF (SiCF/Fe 3 O 4 ) was synthesized for use as a negative electrode material, which shows a high capacitance of 423.2 F g -1 at a scan rate of 5 mV s -1 . Therefore, by pairing the SiCF/MgCo 2 O 4 positive electrode and the SiCF/Fe 3 O 4 negative electrode with a redox active quasi-solid-state PVA-KOH-p-nitroaniline (PVA-KOH-PNA) gel electrolyte, a novel solid-state asymmetric supercapacitor device was assembled. Because of the synergistic effect between the highly porous SiCF and the vigorous redox-reaction of metal oxides, the hybrid nanostructure electrodes exhibited outstanding charge storage and transport. In addition, the redox active PVA-KOH-PNA electrolyte adds additional pseudocapacitance, which arises from the nitro-reduction and oxidation and reduction process of the reduction product of p-phenylenediamine, resulting in an enhancement of the capacitance (a specific capacitance of 161.77 F g -1 at a scan rate of 5 mV s -1 ) and energy density (maximum energy density of 72.79 Wh kg -1 at a power density of 727.96 W kg -1 ).

  5. Ionospheric Impacts on UHF Space Surveillance

    Science.gov (United States)

    Jones, J. C.

    2017-12-01

    Earth's atmosphere contains regions of ionized plasma caused by the interaction of highly energetic solar radiation. This region of ionization is called the ionosphere and varies significantly with altitude, latitude, local solar time, season, and solar cycle. Significant ionization begins at about 100 km (E layer) with a peak in the ionization at about 300 km (F2 layer). Above the F2 layer, the atmosphere is mostly ionized but the ion and electron densities are low due to the unavailability of neutral molecules for ionization so the density decreases exponentially with height to well over 1000 km. The gradients of these variations in the ionosphere play a significant role in radio wave propagation. These gradients induce variations in the index of refraction and cause some radio waves to refract. The amount of refraction depends on the magnitude and direction of the electron density gradient and the frequency of the radio wave. The refraction is significant at HF frequencies (3-30 MHz) with decreasing effects toward the UHF (300-3000 MHz) range. UHF is commonly used for tracking of space objects in low Earth orbit (LEO). While ionospheric refraction is small for UHF frequencies, it can cause errors in range, azimuth angle, and elevation angle estimation by ground-based radars tracking space objects. These errors can cause significant errors in precise orbit determinations. For radio waves transiting the ionosphere, it is important to understand and account for these effects. Using a sophisticated radio wave propagation tool suite and an empirical ionospheric model, we calculate the errors induced by the ionosphere in a simulation of a notional space surveillance radar tracking objects in LEO. These errors are analyzed to determine daily, monthly, annual, and solar cycle trends. Corrections to surveillance radar measurements can be adapted from our simulation capability.

  6. 47 CFR 73.4195 - Political advertising by UHF translators.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false Political advertising by UHF translators. 73.4195 Section 73.4195 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) BROADCAST RADIO... advertising by UHF translators. See Public Notice, FCC 76936, dated October 8, 1976. 62 FCC 2d 896; 41 FR...

  7. Special Semaphore Scheme for UHF Spacecraft Communications

    Science.gov (United States)

    Butman, Stanley; Satorius, Edgar; Ilott, Peter

    2006-01-01

    A semaphore scheme has been devised to satisfy a requirement to enable ultrahigh- frequency (UHF) radio communication between a spacecraft descending from orbit to a landing on Mars and a spacecraft, in orbit about Mars, that relays communications between Earth and the lander spacecraft. There are also two subsidiary requirements: (1) to use UHF transceivers, built and qualified for operation aboard the spacecraft that operate with residual-carrier binary phase-shift-keying (BPSK) modulation at a selectable data rate of 8, 32, 128, or 256 kb/s; and (2) to enable low-rate signaling even when received signals become so weak as to prevent communication at the minimum BPSK rate of 8 kHz. The scheme involves exploitation of Manchester encoding, which is used in conjunction with residual-carrier modulation to aid the carrier-tracking loop. By choosing various sequences of 1s, 0s, or 1s alternating with 0s to be fed to the residual-carrier modulator, one would cause the modulator to generate sidebands at a fundamental frequency of 4 or 8 kHz and harmonics thereof. These sidebands would constitute the desired semaphores. In reception, the semaphores would be detected by a software demodulator.

  8. Using the SLAC VHF and UHF radio systems

    International Nuclear Information System (INIS)

    Struven, W.

    1987-02-01

    The use of the SLAC VHF and UHF Radio Systems and the Tunnel Antenna Systems as they are presently configured is described. The original radio system was built in 1966 and has grown in scope over the years. The Tunnel Antenna Systems were developed for, and first installed in, the PEP ring, and later added to other tunnels and redesigned to cover the UHF range, as well as VHF. The UHF radio system was designed and built for SLC use, and was first used in the SLC Arcs. The three radio systems will be described and the capabilities of each system will be defined

  9. Environmental/Noise Effects on VHF/UHF UWB SAR

    National Research Council Canada - National Science Library

    Ralston, James

    1998-01-01

    This paper presents a straightforward approach to estimating the impact of natural environmental noise on an overall system noise temperature for very high frequency/ultrahigh frequency synthetic aperture radar (VHF/UHF SAR...

  10. Assessment of Multipath and Shadowing Effects on UHF Band in ...

    African Journals Online (AJOL)

    Sultan

    bands are used for television broadcasting, mobile cellular systems, Wi-Fi, satellite communications and many others. Effective communication link in the UHF band requires direct line of sight ..... ad-hoc 802.11 wireless LAN (WLAN) devices.

  11. The design and simulation of UHF RFID microstrip antenna

    Science.gov (United States)

    Chen, Xiangqun; Huang, Rui; Shen, Liman; Liu, Liping; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Renheng, Xu

    2018-02-01

    At present, China has delineated UHF RFID communicating frequency range which is 840 ∼ 845 MHz and 920 ∼ 925 MHz, but most UHF microstrip antenna don’t carry out this standard, that leads to radio frequency pollution. In order to solve the problems above, a method combining theory and simulation is adopted. Combining with a new ceramic material, a 925.5 MHz RFID microstrip antenna is designed, which is optimized and simulated by HFSS software. The results show that the VSWR of this RFID microstrip antenna is relatively small in the vicinity of 922.5 MHz, the gain is 2.1 dBi, which can be widely used in China’s UHF RFID communicating equipments.

  12. False capacitance of supercapacitors

    OpenAIRE

    Ragoisha, G. A.; Aniskevich, Y. M.

    2016-01-01

    Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

  13. Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2/H2 plasmas

    International Nuclear Information System (INIS)

    Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

    2010-01-01

    A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si 3 N 4 hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si 3 N 4 layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH 2 F 2 /H 2 /Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P HF ), and low-frequency source power (P LF ). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si 3 N 4 layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si 3 N 4 /PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO x /PVD a-C/Si 3 N 4 MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si 3 N 4 hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

  14. Assessment of multipath and shadowing effects on UHF band in ...

    African Journals Online (AJOL)

    In this work, the multi-path and shadowing effects on signal impairment were investigated through the use of empirical and semi-empirical path loss models analysis in built-up environments. Electromagnetic field strength measurements were conducted using four television transmitters at UHF bands along four major routes ...

  15. Increased operational range for implantable UHF RFID antennas

    NARCIS (Netherlands)

    Dubok, A.; Smolders, A.B.

    2014-01-01

    This paper discusses the main design challenges of implantable UHF RFID antennas in lossy environments. A novel cylindrical implantable antenna concept is presented. The proposed antenna shows good performance inside lossy environments, like a human body. The RFID tag is able to work in a range up

  16. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    DEFF Research Database (Denmark)

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

  17. Wind turbine clutter mitigation in coastal UHF radar.

    Science.gov (United States)

    Yang, Jing; Pan, Chao; Wang, Caijun; Jiang, Dapeng; Wen, Biyang

    2014-01-01

    Coastal UHF radar provides a unique capability to measure the sea surface dynamic parameters and detect small moving targets, by exploiting the low energy loss of electromagnetic waves propagating along the salty and good conducting ocean surface. It could compensate the blind zone of HF surface wave radar at close range and reach further distance than microwave radars. However, its performance is susceptible to wind turbines which are usually installed on the shore. The size of a wind turbine is much larger than the wavelength of radio waves at UHF band, which results in large radar cross section. Furthermore, the rotation of blades adds time-varying Doppler frequency to the clutter and makes the suppression difficult. This paper proposes a mitigation method which is based on the specific periodicity of wind turbine clutter and performed mainly in the time-frequency domain. Field experimental data of a newly developed UHF radar are used to verify this method, and the results prove its effectiveness.

  18. Ultrahigh Temperature Capacitive Pressure Sensor

    Science.gov (United States)

    Harsh, Kevin

    2014-01-01

    Robust, miniaturized sensing systems are needed to improve performance, increase efficiency, and track system health status and failure modes of advanced propulsion systems. Because microsensors must operate in extremely harsh environments, there are many technical challenges involved in developing reliable systems. In addition to high temperatures and pressures, sensing systems are exposed to oxidation, corrosion, thermal shock, fatigue, fouling, and abrasive wear. In these harsh conditions, sensors must be able to withstand high flow rates, vibration, jet fuel, and exhaust. In order for existing and future aeropropulsion turbine engines to improve safety and reduce cost and emissions while controlling engine instabilities, more accurate and complete sensor information is necessary. High-temperature (300 to 1,350 C) capacitive pressure sensors are of particular interest due to their high measurement bandwidth and inherent suitability for wireless readout schemes. The objective of this project is to develop a capacitive pressure sensor based on silicon carbon nitride (SiCN), a new class of high-temperature ceramic materials, which possesses excellent mechanical and electric properties at temperatures up to 1,600 C.

  19. RFID antenna design for circular polarization in UHF band

    Science.gov (United States)

    Shahid, Hamza; Khan, Muhammad Talal Ali; Tayyab, Umais; Irshad, Usama Bin; Alkhazraji, Emad; Javaid, Muhammad Sharjeel

    2017-05-01

    A miniature half cross dipole antenna for defense and aerospace RFID applications in UHF band is presented. The dipole printed line arms are half crossed shape on top of dielectric substrate backed by reactive impedance surface. The antenna fed by a coaxial cable at the gap separating the dipole arms. Our design is intended to work at 2.42 GHz for RFID readers. The radiation pattern obtained has HPBW of 112, return loss of 22.24 dB and 90 MHz bandwidth.

  20. Capacitive chemical sensor

    Science.gov (United States)

    Manginell, Ronald P; Moorman, Matthew W; Wheeler, David R

    2014-05-27

    A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

  1. Copper thin film for RFID UHF antenna on flexible substrate

    International Nuclear Information System (INIS)

    Tran, Nhan Ai; Tran, Huy Nam; Dang, Mau Chien; Fribourg-Blanc, Eric

    2010-01-01

    A process flow using photolithography and sputtering was studied for copper antenna fabrication on thin poly(ethylene terephthalate) (PET) substrate. The lift-off route was chosen for its flexibility at laboratory scale. It was clarified that the cleaning of PET is an important step that necessitates mild oxygen plasma etching. Then copper is sputter deposited after photolithographic definition of the antenna. Care is necessary since PET, as a very flexible substrate, is temperature sensitive. The temperature increase generated by the impact of deposited copper should be maintained below the glass transition temperature of the polymer to avoid detrimental deformation. dc power of 40 to 50 W was found to be the maximum possible sputtering power for commercial PET. It was found that the resistivity of the thin film is below two times the bulk resistivity of copper for a deposition pressure below 4×10 −3  mbar and thickness above 450 nm. These results enable the reliable fabrication of copper RFID UHF antennae on a PET substrate for further testing of new tag designs. The present paper summarizes the effort to test new designs of antennae for RadioFrequency IDentification (RFID) Ultra High Frequency (UHF) tags, for use in various applications (e.g. object tracking and environment monitoring) in Vietnam

  2. Detection of moving humans in UHF wideband SAR

    Science.gov (United States)

    Sjögren, Thomas K.; Ulander, Lars M. H.; Frölind, Per-Olov; Gustavsson, Anders; Stenström, Gunnar; Jonsson, Tommy

    2014-06-01

    In this paper, experimental results for UHF wideband SAR imaging of humans on an open field and inside a forest is presented. The results show ability to detect the humans and suggest possible ways to improve the results. In the experiment, single channel wideband SAR mode of the UHF UWB system LORA developed by Swedish Defence Research Agency (FOI). The wideband SAR mode used in the experiment was from 220 to 450 MHz, thus with a fractional bandwidth of 0.68. Three humans walking and one stationary were available in the scene with one of the walking humans in the forest. The signature of the human in the forest appeared on the field, due to azimuth shift from the positive range speed component. One human on the field and the one in the forest had approximately the same speed and walking direction. The signatures in the SAR image were compared as a function of integration time based on focusing using the average relative speed of these given by GPS logs. A signal processing gain was obtained for the human in forest until approximately 15 s and 35 s for the human on the field. This difference is likely explained by uneven terrain and trees in the way, causing a non-straight walking path.

  3. Improved capacitance sensor with variable operating frequency for scanning capacitance microscopy

    International Nuclear Information System (INIS)

    Kwon, Joonhyung; Kim, Joonhui; Jeong, Jong-Hwa; Lee, Euy-Kyu; Seok Kim, Yong; Kang, Chi Jung; Park, Sang-il

    2005-01-01

    Scanning capacitance microscopy (SCM) has been gaining attention for its capability to measure local electrical properties in doping profile, oxide thickness, trapped charges and charge dynamics. In many cases, stray capacitance produced by different samples and measurement conditions affects the resonance frequency of a capacitance sensor. The applications of conventional SCM are critically limited by the fixed operating frequency and lack of tunability in its SCM sensor. In order to widen SCM application to various samples, we have developed a novel SCM sensor with variable operating frequency. By performing variable frequency sweep over the band of 160 MHz, the SCM sensor is tuned to select the best and optimized resonance frequency and quality factor for each sample measurement. The fundamental advantage of the new variable frequency SCM sensor was demonstrated in the SCM imaging of silicon oxide nano-crystals. Typical sensitivity of the variable frequency SCM sensor was found to be 10 -19 F/V

  4. Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

    Directory of Open Access Journals (Sweden)

    Petru Adrian Cotfas

    2018-03-01

    Full Text Available The capacitance is one of the key dynamic parameters of solar cells, which can provide essential information regarding the quality and health state of the cell. However, the measurement of this parameter is not a trivial task, as it typically requires high accuracy instruments using, e.g., electrical impedance spectroscopy (IS. This paper introduces a simple and effective method to determine the electric capacitance of the solar cells. An RLC (Resistor Inductance Capacitor circuit is formed by using an inductor as a load for the solar cell. The capacitance of the solar cell is found by measuring the frequency of the damped oscillation that occurs at the moment of connecting the inductor to the solar cell. The study is performed through simulation based on National Instruments (NI Multisim application as SPICE simulation software and through experimental capacitance measurements of a monocrystalline silicon commercial solar cell and a photovoltaic panel using the proposed method. The results were validated using impedance spectroscopy. The differences between the capacitance values obtained by the two methods are of 1% for the solar cells and of 9.6% for the PV panel. The irradiance level effect upon the solar cell capacitance was studied obtaining an increase in the capacitance in function of the irradiance. By connecting different inductors to the solar cell, the frequency effect upon the solar cell capacitance was studied noticing a very small decrease in the capacitance with the frequency. Additionally, the temperature effect over the solar cell capacitance was studied achieving an increase in capacitance with temperature.

  5. Three dimensional simulated modelling of diffusion capacitance of ...

    African Journals Online (AJOL)

    A three dimensional (3-D) simulated modelling was developed to analyse the excess minority carrier density in the base of a polycrystalline bifacial silicon solar cell. The concept of junction recombination velocity was ado-pted to quantify carrier flow through the junction, and to examine the solar cell diffusion capacitance for ...

  6. GPM GROUND VALIDATION NOAA UHF 449 PROFILER RAW DATA SPC FORMAT MC3E V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The NOAA UHF 449 Profiler Raw SPC foramt data was collected during the NASA supported Midlatitude Continental Convective Clouds Experiment (MC3E). The Ultra High...

  7. GPM GROUND VALIDATION NOAA UHF 449 PROFILER RAW DATA SPC FORMAT MC3E V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GPM Ground Validation NOAA UHF 449 Profiler Raw Data SPC Format MC3E dataset was collected during the NASA supported Midlatitude Continental Convective Clouds...

  8. A Numerical Estimation of a RFID Reader Field and SAR inside a Blood Bag at UHF

    Directory of Open Access Journals (Sweden)

    Alessandro Fanti

    2016-11-01

    Full Text Available In this paper, the effects of UHF electromagnetic fields produced by a RFID reader on a blood bag are evaluated numerically in several configurations. The results of the simulation, field level and distribution, specific absorption rate (SAR, and heating time show that an exposure to a typical reader field leads to a temperature increase smaller than 0.1 C and to a SAR smaller than 1 W/kg. As a consequence, no adverse biological effects occur during a typical UHF RFID reading cycle on a blood bag. Therefore, the blood contained in a bag traced using UHF-RFID is as safe as those traced using barcodes. The proposed analysis supports the use of UHF RFID in the blood transfusion supply chain.

  9. Membrane capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Wal, van der A.

    2010-01-01

    Membrane capacitive deionization (MCDI) is an ion-removal process based on applying an electrical potential difference across an aqueous solution which flows in between oppositely placed porous electrodes, in front of which ion-exchange membranes are positioned. Due to the applied potential, ions

  10. Capacitance for carbon capture

    International Nuclear Information System (INIS)

    Landskron, Kai

    2018-01-01

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO 2 into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Capacitance for carbon capture

    Energy Technology Data Exchange (ETDEWEB)

    Landskron, Kai [Department of Chemistry, Lehigh University, Bethlehem, PA (United States)

    2018-03-26

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO{sub 2} into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM

    DEFF Research Database (Denmark)

    Jørgensen, Asger Bjørn; Christensen, Nicklas; Dalal, Dipen Narendrabhai

    2017-01-01

    The benefits of emerging wide-band gap semiconductors can only be utilized if the semiconductor is properly packaged. Capacitive coupling in the package causes electromagnetic interference during high dv/dt switching. This paper investigates the current flowing in the parasitic capacitance between...... the output node and the grounded heat sink for a custom silicon carbide power module. A circuit model of the capacitive coupling path is presented, using parasitic capacitances extracted from ANSYS Q3D. Simulated values are compared with experimental results. A new iteration of the silicon carbide power...

  13. A miniature electrical capacitance tomograph

    Science.gov (United States)

    York, T. A.; Phua, T. N.; Reichelt, L.; Pawlowski, A.; Kneer, R.

    2006-08-01

    The paper describes a miniature electrical capacitance tomography system. This is based on a custom CMOS silicon integrated circuit comprising eight channels of signal conditioning electronics to source drive signals and measure voltages. Electrodes are deposited around a hole that is fabricated, using ultrasonic drilling, through a ceramic substrate and has an average diameter of 0.75 mm. The custom chip is interfaced to a host computer via a bespoke data acquisition system based on a microcontroller, field programmable logic device and wide shift register. This provides fast capture of up to 750 frames of data prior to uploading to the host computer. Data capture rates of about 6000 frames per second have been achieved for the eight-electrode sensor. This rate could be increased but at the expense of signal to noise. Captured data are uploaded to a PC, via a RS232 interface, for off-line imaging. Initial tests are reported for the static case involving 200 µm diameter rods that are placed in the sensor and for the dynamic case using the dose from an inhaler.

  14. Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

    Science.gov (United States)

    Gaubas, E; Ceponis, T; Kusakovskij, J

    2011-08-01

    A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

  15. Capacitive Structures for Gas and Biological Sensing

    KAUST Repository

    Sapsanis, Christos

    2015-04-01

    The semiconductor industry was benefited by the advances in technology in the last decades. This fact has an impact on the sensors field, where the simple transducer was evolved into smart miniaturized multi-functional microsystems. However, commercially available gas and biological sensors are mostly bulky, expensive, and power-hungry, which act as obstacles to mass use. The aim of this work is gas and biological sensing using capacitive structures. Capacitive sensors were selected due to its design simplicity, low fabrication cost, and no DC power consumption. In the first part, the dominant structure among interdigitated electrodes (IDEs), fractal curves (Peano and Hilbert) and Archimedean spiral was investigated from capacitance density perspective. The investigation consists of geometrical formula calculations, COMSOL Multiphysics simulations and cleanroom fabrication of the capacitors on a silicon substrate. Moreover, low-cost fabrication on flexible plastic PET substrate was conducted outside cleanroom with rapid prototyping using a maskless laser etching. The second part contains the humidity, Volatile Organic compounds (VOCs) and Ammonia sensing of polymers, Polyimide and Nafion, and metal-organic framework (MOF), Cu(bdc)2.xH2O using IDEs and tested in an automated gas setup for experiment control and data extraction. The last part includes the biological sensing of C - reactive protein (CRP) quantification, which is considered as a biomarker of being prone to cardiac diseases and Bovine serum albumin (BSA) protein quantification, which is used as a reference for quantifying unknown proteins.

  16. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  17. Capacitive discharge exciplex lamps

    Energy Technology Data Exchange (ETDEWEB)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F [High Current Electronics Institute, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2005-09-07

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications.

  18. Capacitive discharge exciplex lamps

    International Nuclear Information System (INIS)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F

    2005-01-01

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications

  19. Capacitance of circular patch resonator

    International Nuclear Information System (INIS)

    Miano, G.; Verolino, L.; Naples Univ.; Panariello, G.; Vaccaro, V.G.; Naples Univ.

    1995-11-01

    In this paper the capacitance of the circular microstrip patch resonator is computed. It is shown that the electrostatic problem can be formulated as a system of dual integral equations, and the most interesting techniques of solutions of these systems are reviewed. Some useful approximated formulas for the capacitance are derived and plots of the capacitance are finally given in a wide range of dielectric constants

  20. HF RFID versus UHF RFID--Technology for Library Service Transformation at City University of Hong Kong

    Science.gov (United States)

    Ching, Steve H.; Tai, Alice

    2009-01-01

    Since libraries first used RFID systems in the late 1990s, more and more libraries have identified the advantages of the technology. With advances in HF and UHF RFID, both alternatives are now viable in library applications. While some librarians are still skeptical towards UHF RFID as unproven in the library arena, the City University of Hong…

  1. Modeling and analysis of power extraction circuits for passive UHF RFID applications

    International Nuclear Information System (INIS)

    Fan Bo; Dai Yujie; Zhang Xiaoxing; Lue Yingjie

    2009-01-01

    Modeling and analysis of far field power extraction circuits for passive UHF RF identification (RFID) applications are presented. A mathematical model is derived to predict the complex nonlinear performance of UHF voltage multiplier using Schottky diodes. To reduce the complexity of the proposed model, a simple linear approximation for Schottky diode is introduced. Measurement results show considerable agreement with the values calculated by the proposed model. With the derived model, optimization on stage number for voltage multiplier to achieve maximum power conversion efficiency is discussed. Furthermore, according to the Bode-Fano criterion and the proposed model, a limitation on maximum power up range for passive UHF RFID power extraction circuits is also studied.

  2. Experimental Study on Inkjet-Printed Passive UHF RFID Tags on Versatile Paper-Based Substrates

    Directory of Open Access Journals (Sweden)

    Han He

    2016-01-01

    Full Text Available We present the possibilities and challenges of passive UHF RFID tag antennas manufactured by inkjet printing silver nanoparticle ink on versatile paper-based substrates. The most efficient manufacturing parameters, such as the pattern resolution, were determined and the optimal number of printed layers was evaluated for each substrate material. Next, inkjet-printed passive UHF RFID tags were fabricated on each substrate with the optimized parameters and number of layers. According to our measurements, the tags on different paper substrates showed peak read ranges of 4–6.5 meters and the tags on different cardboard substrates exhibited peak read ranges of 2–6 meters. Based on their wireless performance, these inkjet-printed paper-based passive UHF RFID tags are sufficient for many future wireless applications and comparable to tags fabricated on more traditional substrates, such as polyimide.

  3. The Anti-RFI Design of Intelligent Electric Energy Meters with UHF RFID

    Science.gov (United States)

    Chen, Xiangqun; Huang, Rui; Shen, Liman; chen, Hao; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Xu, Renheng

    2018-03-01

    In order to solve the existing artificial meter reading watt-hour meter industry is still slow and inventory of common problems, using the uhf radio frequency identification (RFID) technology and intelligent watt-hour meter depth fusion, which has a one-time read multiple tags, identification distance, high transmission rate, high reliability, etc, while retaining the original asset management functions, in order to ensure the uhf RFID and minimum impact on the operation of the intelligent watt-hour meter, proposed to improve the stability of the electric meter system while working at the same time, this paper designs the uhf RFID intelligent watt-hour meter radio frequency interference resistance, put forward to improve intelligent watt-hour meter electromagnetic compatibility design train of thought, and introduced its power and the hardware circuit design of printed circuit board, etc.

  4. 3D capacitive tactile sensor using DRIE micromachining

    Science.gov (United States)

    Chuang, Chiehtang; Chen, Rongshun

    2005-07-01

    This paper presents a three dimensional micro capacitive tactile sensor that can detect normal and shear forces which is fabricated using deep reactive ion etching (DRIE) bulk silicon micromachining. The tactile sensor consists of a force transmission plate, a symmetric suspension system, and comb electrodes. The sensing character is based on the changes of capacitance between coplanar sense electrodes. High sensitivity is achieved by using the high aspect ratio interdigital electrodes with narrow comb gaps and large overlap areas. The symmetric suspension mechanism of this sensor can easily solve the coupling problem of measurement and increase the stability of the structure. In this paper, the sensor structure is designed, the capacitance variation of the proposed device is theoretically analyzed, and the finite element analysis of mechanical behavior of the structures is performed.

  5. Compact broadband circularly polarised slot antenna for universal UHF RFID readers

    DEFF Research Database (Denmark)

    Xu, Bo; Zhang, Shuai; Liu, Yusha

    2015-01-01

    A compact broadband circularly polarised (CP) slot antenna is designed for universal ultra-high-frequency (UHF) radio frequency identification (RFID) readers. The antenna consists of an L-shaped metal strip and a square-slot-loaded ground plane with four tuning stubs. The total size is 100 mm×100mm......×1.6 mm. The measured –10 dB impedance bandwidth is 40.7% (772–1166 MHz) and the measured 3 dB axial ratio (AR) bandwidth is 13.9% (840–965 MHz). Both the impedance and AR bandwidth cover the worldwide UHF RFID band....

  6. Capacitive gauging apparatus

    International Nuclear Information System (INIS)

    Walton, H.

    1985-01-01

    Apparatus for gauging physical dimensions of solid or tubular bodies (e.g. a nuclear fuel pellet) comprises a capacitive transducer having electrodes forming diametrically arranged pairs of capacitors and means for connecting the pairs, preferably sequentially, in an arm of a four arm electrical network. For circumferential scanning of a solid body along its length, the body is moved along a path of travel through head assembly including the transducer by means of plungers with the axis of the body being coincident with the axis of the transducer. As the body moves through the transducer the diametrically arranged pairs of capacitors scan the surface to result in a surface profile of the body. For scanning the bore of a pipe or tube the transducer is inserted as a probe and moved along the bore of the pipe or tube, means being provided for maintaining the probe coaxial with the pipe or tube. (author)

  7. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  8. Efficiency of Capacitively Loaded Converters

    DEFF Research Database (Denmark)

    Andersen, Thomas; Huang, Lina; Andersen, Michael A. E.

    2012-01-01

    This paper explores the characteristic of capacitance versus voltage for dielectric electro active polymer (DEAP) actuator, 2kV polypropylene film capacitor as well as 3kV X7R multi layer ceramic capacitor (MLCC) at the beginning. An energy efficiency for capacitively loaded converters...... is introduced as a definition of efficiency. The calculated and measured efficiency curves for charging DEAP actuator, polypropylene film capacitor and X7R MLCC are provided and compared. The attention has to be paid for the voltage dependent capacitive load, like X7R MLCC, when evaluating the charging...... polypropylene film capacitor can be the equivalent capacitive load. Because of the voltage dependent characteristic, X7R MLCC cannot be used to replace the DEAP actuator. However, this type of capacitor can be used to substitute the capacitive actuator with voltage dependent property at the development phase....

  9. Electromagnetic fields (UHF) increase voltage sensitivity of membrane ion channels; possible indication of cell phone effect on living cells.

    Science.gov (United States)

    Ketabi, N; Mobasheri, H; Faraji-Dana, R

    2015-03-01

    The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

  10. Analysis strategies for high-resolution UHF-fMRI data.

    Science.gov (United States)

    Polimeni, Jonathan R; Renvall, Ville; Zaretskaya, Natalia; Fischl, Bruce

    2018-03-01

    Functional MRI (fMRI) benefits from both increased sensitivity and specificity with increasing magnetic field strength, making it a key application for Ultra-High Field (UHF) MRI scanners. Most UHF-fMRI studies utilize the dramatic increases in sensitivity and specificity to acquire high-resolution data reaching sub-millimeter scales, which enable new classes of experiments to probe the functional organization of the human brain. This review article surveys advanced data analysis strategies developed for high-resolution fMRI at UHF. These include strategies designed to mitigate distortion and artifacts associated with higher fields in ways that attempt to preserve spatial resolution of the fMRI data, as well as recently introduced analysis techniques that are enabled by these extremely high-resolution data. Particular focus is placed on anatomically-informed analyses, including cortical surface-based analysis, which are powerful techniques that can guide each step of the analysis from preprocessing to statistical analysis to interpretation and visualization. New intracortical analysis techniques for laminar and columnar fMRI are also reviewed and discussed. Prospects for single-subject individualized analyses are also presented and discussed. Altogether, there are both specific challenges and opportunities presented by UHF-fMRI, and the use of proper analysis strategies can help these valuable data reach their full potential. Copyright © 2017 Elsevier Inc. All rights reserved.

  11. Comparison of UHF measurements with the propagation model of Recommendation ITU-R P.1546

    NARCIS (Netherlands)

    Witvliet, B.A.; Wijninga, P.W.; van Maanen, E.; Smith, B.

    2010-01-01

    This report describes a radio propagation measurement campaign that has been performed along paths between the Netherlands and the United Kingdom. The campaign focused on UHF propagation on mixed land/sea paths. Special attention was given to calibration accuracy and validation of the measurement

  12. Inkjet printing of UHF antennas on corrugated cardboards for packaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Sowade, Enrico, E-mail: enrico.sowade@mb.tu-chemnitz.de [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Göthel, Frank [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Zichner, Ralf [Department Printed Functionalities, Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz (Germany); Baumann, Reinhard R. [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Department Printed Functionalities, Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz (Germany)

    2015-03-30

    Highlights: • Inkjet printing of UHF antennas on cardboard substrates. • Development of primer layer to compensate the absorptiveness of the cardboard and the rough surface. • Manufacturing of UHF antennas in a fully digital manner for packaging applications. - Abstract: In this study, a method based on inkjet printing has been established to develop UHF antennas on a corrugated cardboard for packaging applications. The use of such a standardized, paper-based packaging substrate as material for printing electronics is challenging in terms of its high surface roughness and high ink absorption rate, especially when depositing very thin films with inkjet printing technology. However, we could obtain well-defined silver layers on the cardboard substrates due to a primer layer approach. The primer layer is based on a UV-curable ink formulation and deposited as well as the silver ink with inkjet printing technology. Industrial relevant printheads were chosen for the deposition of the materials. The usage of inkjet printing allows highest flexibility in terms of pattern design. The primer layer was proven to optimize the surface characteristics of the substrate, mainly reducing the surface roughness and water absorptiveness. Thanks to the primer layer approach, ultra-high-frequency (UHF) radio-frequency identification (RFID) antennas were deposited by inkjet printing on the corrugated cardboards. Along with the characterization and interpretation of electrical properties of the established conductive antenna patterns, the performance of the printed antennas were analyzed in detail by measuring the scattering parameter S{sub 11} and the antenna gain.

  13. The effects of single bit quantization on direction of arrival estimation of UHF RFID tags

    NARCIS (Netherlands)

    Huiting, J.; Kokkeler, Andre B.J.; Smit, Gerardus Johannes Maria

    2016-01-01

    Phased arrays can be used to estimate the direction-of-arrival (DOA) of UHF RFID tags. To save on energy consumption and hardware costs, in this paper we explore the possibility of using single bit analog-to-digital converters for our phased array setup. This setup consists of an off-the-shelf

  14. FSL based estimation of white space availability in UHF TV bands in Bergvliet, South Africa

    CSIR Research Space (South Africa)

    Lysko, AA

    2012-09-01

    Full Text Available in the UHF TV frequency bands. The free space loss (FSL) formula, together with a line of sight condition, are applied to the information about the location and power of TV transmitters around this area. The predictions show 61% correlation between...

  15. UHF Signal Processing and Pattern Recognition of Partial Discharge in Gas-Insulated Switchgear Using Chromatic Methodology.

    Science.gov (United States)

    Wang, Xiaohua; Li, Xi; Rong, Mingzhe; Xie, Dingli; Ding, Dan; Wang, Zhixiang

    2017-01-18

    The ultra-high frequency (UHF) method is widely used in insulation condition assessment. However, UHF signal processing algorithms are complicated and the size of the result is large, which hinders extracting features and recognizing partial discharge (PD) patterns. This article investigated the chromatic methodology that is novel in PD detection. The principle of chromatic methodologies in color science are introduced. The chromatic processing represents UHF signals sparsely. The UHF signals obtained from PD experiments were processed using chromatic methodology and characterized by three parameters in chromatic space ( H , L , and S representing dominant wavelength, signal strength, and saturation, respectively). The features of the UHF signals were studied hierarchically. The results showed that the chromatic parameters were consistent with conventional frequency domain parameters. The global chromatic parameters can be used to distinguish UHF signals acquired by different sensors, and they reveal the propagation properties of the UHF signal in the L-shaped gas-insulated switchgear (GIS). Finally, typical PD defect patterns had been recognized by using novel chromatic parameters in an actual GIS tank and good performance of recognition was achieved.

  16. Experimental Investigation on Propagation Characteristics of PD Radiated UHF Signal in Actual 252 kV GIS

    Directory of Open Access Journals (Sweden)

    Tianhui Li

    2017-07-01

    Full Text Available For partial discharge (PD diagnostics in gas insulated switchgears (GISs based on the ultra-high-frequency (UHF method, it is essential to study the attenuation characteristics of UHF signals so as to improve the application of the UHF technique. Currently, the performance of UHF has not been adequately considered in most experimental research, while the constructive conclusions about the installation and position of UHF sensors are relatively rare. In this research, by using a previously-designed broadband sensor, the output signal is detected and analyzed experimentally in a 252 kV GIS with L-shaped structure and disconnecting switch. Since the relative position of the sensor and the defect is usually fixed by prior research, three circumferential angle positions of the defect in cross section are performed. The results are studied by time, statistics and frequency analyses. This identifies that the discontinuity conductor of DS will lead to a rise of both the peak to peak value (Vpp and the transmission rate of the UHF signal. Then, the frequency analysis indicates that the reason for the distinction of signal amplitude and transmission rate is that the mode components of the PD signal are distinctively affected by the special structure of GIS. Finally, the optimal circumferential angle position of the UHF Sensor is given based on the comparison of transmission rates.

  17. Ferroelectric negative capacitance domain dynamics

    Science.gov (United States)

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2018-05-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

  18. The Capacitive Magnetic Field Sensor

    Science.gov (United States)

    Zyatkov, D. O.; Yurchenko, A. V.; Balashov, V. B.; Yurchenko, V. I.

    2016-01-01

    The results of a study of sensitive element magnetic field sensor are represented in this paper. The sensor is based on the change of the capacitance with an active dielectric (ferrofluid) due to the magnitude of magnetic field. To prepare the ferrofluid magnetic particles are used, which have a followingdispersion equal to 50 brand 5BDSR. The dependence of the sensitivity of the capacitive element from the ferrofluid with different dispersion of magnetic particles is considered. The threshold of sensitivity and sensitivity of a measuring cell with ferrofluid by a magnetic field was determined. The experimental graphs of capacitance change of the magnitude of magnetic field are presented.

  19. Virtual electrical capacitance tomography sensor

    International Nuclear Information System (INIS)

    Li, Y; Yang, W Q

    2005-01-01

    Electrical capacitance tomography (ECT) is an effective technique for elucidating the distribution of dielectric materials inside closed pipes or vessels. This paper describes a virtual electrical capacitance tomography (VECT) system, which can simulate a range of sensor and hardware configurations and material distributions. A selection of popular image reconstruction algorithms has been made available and image error and capacitance error tools enable their performance to be evaluated and compared. Series of frame-by-frame results can be stored for simulating real-time dynamic flows. The system is programmed in Matlab with DOS functions. It is convenient to use and low-cost to operate, providing an effective tool for engineering experiment

  20. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  1. Miniaturized UHF, S-, and Ka-band RF MEMS Filters for Small Form Factor, High Performance EVA Radio, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase II of this SBIR, Harmonic Devices (HDI) proposes to develop miniaturized MEMS filters at UHF, S-band and Ka-band to address the requirements of NASA's...

  2. A Compact RFID Reader Antenna for UHF Near-Field and Far-Field Operations

    Directory of Open Access Journals (Sweden)

    Lai Xiao zheng

    2013-01-01

    Full Text Available A compact loop antenna is presented for mobile ultrahigh frequency (UHF radio frequency identification (RFID application. This antenna, printed on a 0.8 mm thick FR4 substrate with a small size of 31 mm × 31 mm, achieves good impedance bandwidth from 897 to 928 MHz, which covers USA RFID Band (902–928 MHz. The proposed loop configuration, with a split-ring resonator (SRR coupled inside it, demonstrates strong and uniform magnetic field distribution in the near-field antenna region. Its linearly polarized radiation pattern provides available far-field gain. Finally, the reading capabilities of antenna are up to 56 mm for near-field and 1.05 m for far-field UHF RFID operations, respectively.

  3. Investigating Feasibility of Multiple UHF Passive RFID Transmitters Using Backscatter Modulation Scheme in BCI Applications

    DEFF Research Database (Denmark)

    Al Ajrawi, Shams; Sarkar, Mahasweta; Mihovska, Albena

    Building a wireless body area network (WBAN) application including implantable transceivers placed inside the human brain to collect the data from the electrodes and transmit them wirelessly to a controller placed outside the brain on the scalp faced major challenges. The transmission...... using passive RFID as the implantable transmitters and letting them operate in the UHF range. Backscatter modulation has been used as a power transfer mechanism. Investigation on the feasibility and applicability of implantable UHF Passive RFID transmitters inside the brain is done for capturing multi......-channel ECoG signals when traversing through a phantom brain model as a transmission medium for the experiments at a high data transfer rate. Detailed analysis has been done on parameters such as Received Signal Strength Indication (RSSI), signal to noise ratio (SNR), Maximum number of electrodes, Path Loss...

  4. Characterization of inkjet-printing HF and UHF antennas for RFID applications

    Science.gov (United States)

    Tarapata, Grzegorz; Paczesny, Daniel; Kawecki, Krzysztof

    2013-10-01

    The aim of this work was to perform a set of RFID antennas on flexible plastic substrates designed for range of HF and UHF band. The samples was fabricated using inkjet printing technology and conductive material base on silver nanopartilces ink. Fabricated antennas have been characterized, and the results were compared with the parameters of antennas made with usage of classical PCB technology on FR4 laminate with copper metallization. The paper presents studies on the impact of elastic substrates and conductive materials on antennas electrical parameters, as well as the communication range of the resulting RFID tags. During the experiment two patterns of HF and three patterns of UHF antennas was examined and the antennas was realized on different types of substrates, such as PET, Kapton® and FR4.

  5. Calibration of ultra-high frequency (UHF) partial discharge sensors using FDTD method

    Science.gov (United States)

    Ishak, Asnor Mazuan; Ishak, Mohd Taufiq

    2018-02-01

    Ultra-high frequency (UHF) partial discharge sensors are widely used for conditioning monitoring and defect location in insulation system of high voltage equipment. Designing sensors for specific applications often requires an iterative process of manufacturing, testing and mechanical modifications. This paper demonstrates the use of finite-difference time-domain (FDTD) technique as a tool to predict the frequency response of UHF PD sensors. Using this approach, the design process can be simplified and parametric studies can be conducted in order to assess the influence of component dimensions and material properties on the sensor response. The modelling approach is validated using gigahertz transverse electromagnetic (GTEM) calibration system. The use of a transient excitation source is particularly suitable for modeling using FDTD, which is able to simulate the step response output voltage of the sensor from which the frequency response is obtained using the same post-processing applied to the physical measurement.

  6. Assessment of immunomodulating action of combined therapy with UHF-hyperthermia in children with osteogenic sarcoma

    International Nuclear Information System (INIS)

    Neprina, G.S.; Panteleeva, E.S.; Vatin, O.E.; Bizer, V.A.; Bojko, I.N.

    1989-01-01

    The paper is concerned with immunological evaluation of different stages of combined therapy with local UHF-hyperthermia in children with osteogenic sarcoma. Combined therapy (polychemo- and raditherapy) was shown to cause a decrease in the number of immunocompetent cells, to enhance dysbalance of immunoregulatory T-lymphocytes, to weaken T-lymphocyte function on PHA; immunosuppressive action of combined therapy did not depend on a tumor site. The incorporation of UHF-hyperthermia in the therapeutic scheme weakened the manifestations of secondary immunodeficiency, got back to normal structure of T-lymphocyte population. A favorable immunomodulating effect of hyperthermia was more frequently observed in patients with crural bone tumors. The effect of hyperthermia was revealed after direct influence of thermotherapy but it was absent in continuation of combined treatment

  7. UHF RFID tag implementation on cork substrate for wine bottle monitoring

    OpenAIRE

    Rima Martí, Sergi; Georgiadis, Apostolos

    2013-01-01

    Wine industry is starting to deploy RFID technology for production control, logistics or innovative marketing. However, identifying wine bottles is difficult due to the unfavorable material content for the operation of the antennas. The thesis consists on the implementation of a UHF RFID tag placed on cork substrate in order to provide a feasible way of identifying wine packaged bottle. The proposed RFID tag consists on a meandered line dipole antenna, designed to be conformed so that it can ...

  8. Un sistema RFID in banda UHF per l'autoprestito in Biblioteca

    OpenAIRE

    Ricci, Franco; Crisanti, Andrea

    2009-01-01

    Department of Physics and CASPUR have been starting, in the past 2 years, a collaborationin order to develop a new RFID (Radio Frequency IDentification) system for automaticlibrary loan procedures. These systems (generally known as self-checkequipments) uses radio signals in the UHF frequency range to interact with antennas(passive tags) used to identify books. Users identification is made through special cardswith an embedded tag. The entire loan process is completely managed by users throug...

  9. A signature correlation study of ground target VHF/UHF ISAR imagery

    Science.gov (United States)

    Gatesman, Andrew J.; Beaudoin, Christopher J.; Giles, Robert H.; Kersey, William T.; Waldman, Jerry; Carter, Steve; Nixon, William E.

    2003-09-01

    VV and HH-polarized radar signatures of several ground targets were acquired in the VHF/UHF band (171-342 MHz) by using 1/35th scale models and an indoor radar range operating from 6 to 12 GHz. Data were processed into medianized radar cross sections as well as focused, ISAR imagery. Measurement validation was confirmed by comparing the radar cross section of a test object with a method of moments radar cross section prediction code. The signatures of several vehicles from three vehicle classes (tanks, trunks, and TELs) were measured and a signature cross-correlation study was performed. The VHF/UHF band is currently being exploited for its foliage penetration ability, however, the coarse image resolution which results from the relatively long radar wavelengths suggests a more challenging target recognition problem. One of the study's goals was to determine the amount of unique signature content in VHF/UHF ISAR imagery of military ground vehicles. Open-field signatures are compared with each other as well as with simplified shapes of similar size. Signatures were also acquired on one vehicle in a variety of configurations to determine the impact of monitor target variations on the signature content at these frequencies.

  10. Bioenergetics of mammalian sperm capacitation.

    Science.gov (United States)

    Ferramosca, Alessandra; Zara, Vincenzo

    2014-01-01

    After ejaculation, the mammalian male gamete must undergo the capacitation process, which is a prerequisite for egg fertilization. The bioenergetics of sperm capacitation is poorly understood despite its fundamental role in sustaining the biochemical and molecular events occurring during gamete activation. Glycolysis and mitochondrial oxidative phosphorylation (OXPHOS) are the two major metabolic pathways producing ATP which is the primary source of energy for spermatozoa. Since recent data suggest that spermatozoa have the ability to use different metabolic substrates, the main aim of this work is to present a broad overview of the current knowledge on the energy-producing metabolic pathways operating inside sperm mitochondria during capacitation in different mammalian species. Metabolism of glucose and of other energetic substrates, such as pyruvate, lactate, and citrate, is critically analyzed. Such knowledge, besides its obvious importance for basic science, could eventually translate into the development of novel strategies for treatment of male infertility, artificial reproduction, and sperm selection methods.

  11. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

  12. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  13. Three-axial force sensor with capacitive read-out using a differential relaxation oscillator

    NARCIS (Netherlands)

    Brookhuis, Robert Anton; Wiegerink, Remco J.; Lammerink, Theodorus S.J.; Krijnen, Gijsbertus J.M.

    2013-01-01

    A silicon three-axis force sensor is designed and realized to be used for measurement of the interaction force between a human finger and the environment. To detect the force components, a capacitive read-out system using a novel relaxation oscillator has been developed with an output frequency

  14. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  15. Supercapacitor electrodes based on polyaniline-silicon nanoparticle composite

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qiang; Yau, Siu-Tung [Department of Electrical and Computer Engineering, Cleveland State University, 2121 Euclid Avenue, Cleveland, OH 44115 (United States); Nayfeh, Munir H. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

    2010-06-15

    A composite material formed by dispersing ultrasmall silicon nanoparticles in polyaniline has been used as the electrode material for supercapacitors. Electrochemical characterization of the composite indicates that the nanoparticles give rise to double-layer capacitance while polyaniline produces pseudocapacitance. The composite shows significantly improved capacitance compared to that of polyaniline. The enhanced capacitance results in high power (220 kW kg{sup -1}) and energy-storage (30 Wh kg{sup -1}) capabilities of the composite material. A prototype supercapacitor using the composite as the charge storage material has been constructed. The capacitor showed the enhanced capacitance and good device stability during 1000 charging/discharging cycles. (author)

  16. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Finite-element simulations of coupling capacitances in capacitively coupled pixel detectors

    CERN Document Server

    AUTHOR|(SzGeCERN)755510

    2017-01-01

    Capacitively coupled hybrid silicon pixel-detector assemblies are under study for the vertex detector at the proposed future CLIC linear electron-positron collider. The assemblies consist of active CCPDv3 sensors, with 25 μm pixel pitch implemented in a 180 nm High- Voltage CMOS process, which are glued to the CLICpix readout ASIC, with the same pixel pitch and processed in a commercial 65 nm CMOS technology. The signal created in the silicon bulk of the active sensors passes a two-stage amplifier, in each pixel, and gets transferred as a voltage pulse to metal pads facing the readout chip (ROC). The coupling of the signal to the metal pads on the ROC side proceeds through the capacitors formed between the two chips by a thin layer of epoxy glue. The coupling strength and the amount of unwanted cross coupling to neighbouring pixels depends critically on the uniformity of the glue layer, its thickness and on the alignment precision during the flip-chip assembly process. Finite-element calculations of the coup...

  18. Design Considerations in Capacitively Coupled Plasmas

    Science.gov (United States)

    Song, Sang-Heon; Ventzek, Peter; Ranjan, Alok

    2015-11-01

    Microelectronics industry has driven transistor feature size scaling from 10-6 m to 10-9 m during the past 50 years, which is often referred to as Moore's law. It cannot be overstated that today's information technology would not have been so successful without plasma material processing. One of the major plasma sources for the microelectronics fabrication is capacitively coupled plasmas (CCPs). The CCP reactor has been intensively studied and developed for the deposition and etching of different films on the silicon wafer. As the feature size gets to around 10 nm, the requirement for the process uniformity is less than 1-2 nm across the wafer (300 mm). In order to achieve the desired uniformity, the hardware design should be as precise as possible before the fine tuning of process condition is applied to make it even better. In doing this procedure, the computer simulation can save a significant amount of resources such as time and money which are critical in the semiconductor business. In this presentation, we compare plasma properties using a 2-dimensional plasma hydrodynamics model for different kinds of design factors that can affect the plasma uniformity. The parameters studied in this presentation include chamber accessing port, pumping port, focus ring around wafer substrate, and the geometry of electrodes of CCP.

  19. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  20. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  1. Partial Discharge Spectral Characterization in HF, VHF and UHF Bands Using Particle Swarm Optimization.

    Science.gov (United States)

    Robles, Guillermo; Fresno, José Manuel; Martínez-Tarifa, Juan Manuel; Ardila-Rey, Jorge Alfredo; Parrado-Hernández, Emilio

    2018-03-01

    The measurement of partial discharge (PD) signals in the radio frequency (RF) range has gained popularity among utilities and specialized monitoring companies in recent years. Unfortunately, in most of the occasions the data are hidden by noise and coupled interferences that hinder their interpretation and renders them useless especially in acquisition systems in the ultra high frequency (UHF) band where the signals of interest are weak. This paper is focused on a method that uses a selective spectral signal characterization to feature each signal, type of partial discharge or interferences/noise, with the power contained in the most representative frequency bands. The technique can be considered as a dimensionality reduction problem where all the energy information contained in the frequency components is condensed in a reduced number of UHF or high frequency (HF) and very high frequency (VHF) bands. In general, dimensionality reduction methods make the interpretation of results a difficult task because the inherent physical nature of the signal is lost in the process. The proposed selective spectral characterization is a preprocessing tool that facilitates further main processing. The starting point is a clustering of signals that could form the core of a PD monitoring system. Therefore, the dimensionality reduction technique should discover the best frequency bands to enhance the affinity between signals in the same cluster and the differences between signals in different clusters. This is done maximizing the minimum Mahalanobis distance between clusters using particle swarm optimization (PSO). The tool is tested with three sets of experimental signals to demonstrate its capabilities in separating noise and PDs with low signal-to-noise ratio and separating different types of partial discharges measured in the UHF and HF/VHF bands.

  2. Triboelectricity in capacitive biopotential measurements.

    Science.gov (United States)

    Wartzek, Tobias; Lammersen, Thomas; Eilebrecht, Benjamin; Walter, Marian; Leonhardt, Steffen

    2011-05-01

    Capacitive biopotential measurements suffer from strong motion artifacts, which may result in long time periods during which a reliable measurement is not possible. This study examines contact electrification and triboelectricity as possible reasons for these artifacts and discusses local triboelectric effects on the electrode-body interface as well as global electrostatic effects as common-mode interferences. It will be shown that most probably the triboelectric effects on the electrode-body interface are the main reason for artifacts, and a reduction of artifacts can only be achieved with a proper design of the electrode-body interface. For a deeper understanding of the observed effects, a mathematical model for triboelectric effects in highly isolated capacitive biopotential measurements is presented and verified with experiments. Based on these analyses of the triboelectric effects on the electrode-body interface, different electrode designs are developed and analyzed in order to minimize artifacts due to triboelectricity on the electrode-body interface. © 2011 IEEE

  3. Effects of wind turbines on UHF television reception: field tests in Denmark

    International Nuclear Information System (INIS)

    Sorenson, B.

    1992-01-01

    As a result of a planning application for a windfarm comprising 20 wind turbines at Tynewydd Farm, Gilfach Goch in Mid Glamorgan, a report discussing any detrimental effects the proposal might have on u.h.f. television reception was produced. In order to make the report as definitive as possible, it was decided to carry out field tests on the exact model of wind turbine to be used at Tynewydd. This required a field trip to Denmark, and the opportunity was taken to make measurements on two other models of turbine at the same time. This report presents the analysis of the results for all three turbines. (author)

  4. Letter to the Editor UHF electromagnetic emission stimulated by HF pumping of the ionosphere

    Directory of Open Access Journals (Sweden)

    S. M. Grach

    2002-10-01

    Full Text Available UHF electromagnetic emission (with a frequency near 600 MHz from the F-region of the ionosphere pumped by an HF powerful radio wave is revealed. Possible mechanisms of the emission excitation, such as plasma mode con-version, scattering or Earth thermal noise emission off the plasma density irregularities, bremsstrahlung and excitation of high Rydberg states of the neutral particles by the accelerated electrons are discussed.Key words. Ionosphere (active experiments; wave-particle interactions – Solar physics, astrophysics, and astronomy (radio emissions

  5. Letter to the Editor UHF electromagnetic emission stimulated by HF pumping of the ionosphere

    Directory of Open Access Journals (Sweden)

    E. N. Sergeev

    Full Text Available UHF electromagnetic emission (with a frequency near 600 MHz from the F-region of the ionosphere pumped by an HF powerful radio wave is revealed. Possible mechanisms of the emission excitation, such as plasma mode con-version, scattering or Earth thermal noise emission off the plasma density irregularities, bremsstrahlung and excitation of high Rydberg states of the neutral particles by the accelerated electrons are discussed.Key words. Ionosphere (active experiments; wave-particle interactions – Solar physics, astrophysics, and astronomy (radio emissions

  6. Investigating Feasibility Of Multiple UHF Passive RFID Transmitters Using Backscatter Modulation Scheme In BCI Applications

    DEFF Research Database (Denmark)

    Al Ajrawi, Shams; Sarkar, Mahasweta; Rao, Ramesh

    simulatedbrain matter to a receiver located on the surface of a simulatedskull. These analyses are essential for building a brain computerinterface application. We showcase theoretical and experimentalresults based on a phantom model of the human brain usingpassive RFID as the implantable transmitter operating...... in UHFrange. Furthermore, we use backscatter modulation as a powertransfer mechanism. Investigation on the feasibility and appli-cability of implantable UHF Passive RFID transmitters insidethe brain is done for capturing multi-channel ECoG signals at ahigh data transfer rate. Detailed analysis have been done...

  7. A Novel Technology for Motion Capture Using Passive UHF RFID Tags

    DEFF Research Database (Denmark)

    Krigslund, Rasmus; Popovski, Petar; Pedersen, Gert Frølund

    2013-01-01

    Although there are several existing methods for human motion capture, they all have important limitations and hence there is the need to explore fundamentally new approaches. Here we present a method based on a Radio Frequency IDentification (RFID) system with passive Ultra High Frequency (UHF...... walking. The reference joint angles for the validation were obtained by an optoelectronic system. Although the method is in its initial phase of development, the results of the validation are promising and show that the movement information can be extracted from the RFID response signals....

  8. Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching system

    International Nuclear Information System (INIS)

    Kobayashi, Hiroyuki; Yokogawa, Ken'etsu; Maeda, Kenji; Izawa, Masaru

    2008-01-01

    Control of particle transport was investigated by using a UHF-ECR etching apparatus with a laser particle monitor. The particles, which float at a plasma-sheath boundary, fall on a wafer when the plasma is turned off. These floating particles can be removed from the region above the wafer by changing the plasma distribution. We measured the distribution of the rotational temperature of nitrogen molecules across the wafer to investigate the effect of the thermophoretic force. We found that mechanisms of particle transport in directions parallel to the wafer surface can be explained by the balance between thermophoretic and gas viscous forces

  9. Effects of wind turbines on UHF television reception: field tests in Denmark, November 1991

    International Nuclear Information System (INIS)

    Wright, D.T.

    1992-01-01

    As a result of a planning application for a wind farm comprising 20 wind turbines at Tynewydd Farm, Gilfach Goch in Mid Glamorgan, it became necessary to produce a Report discussing any detrimental effects the proposal might have on UHF television reception. In order to make that Report as definitive as possible, it was decided to carry out field tests on the exact model of wind turbine to be used to Tynewydd. This required a field trip to Denmark, and the opportunity was taken to make measurements on two other models of turbine at the same time. This Report presents the analysis of the results for all three turbines. (Author)

  10. Towards Washable Electrotextile UHF RFID Tags: Reliability Study of Epoxy-Coated Copper Fabric Antennas

    Directory of Open Access Journals (Sweden)

    Shiqi Wang

    2015-01-01

    Full Text Available We investigate the impact of washing on the performance of passive UHF RFID tags based on dipole antennas fabricated from copper fabric and coated with protective epoxy coating. Initially, the tags achieved read ranges of about 8 meters, under the European RFID emission regulation. To assess the impact of washing on the performance of the tags, they were washed repeatedly in a washing machine and measured after every washing cycle. Despite the reliability challenges related to mechanical stress, the used epoxy coating was found to be a promising coating for electrotextile tags in moist conditions.

  11. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  12. Development and analysis of a capacitive touch sensor using a liquid metal droplet

    International Nuclear Information System (INIS)

    Baek, Seungbum; Won, Dong-Joon; Kim, Joong Gil; Kim, Joonwon

    2015-01-01

    In this paper, we introduce a small-sized capacitive touch sensor with large variations in its capacitance. This sensor uses the changes in capacitance caused by the variation of the overlap area between a liquid metal (LM) droplet and a flat electrode while keeping the gap between the droplet and the bottom electrode at a small constant value (i.e. thickness of dielectric layer). Initially, the droplet is placed inside a polydimethylsiloxane (PDMS) chamber, and a thin silicon dioxide film separates the droplet and the electrode. Owing to the high surface tension of the LM, the droplet retains its spherical shape and the overlap area remains small, which means that the capacitance between the droplet and the electrode also remains small. When normal force is applied, the pressure on the membrane pushes the droplet downward, thus spreading the droplet to the bottom of the chamber and increasing the capacitance. To verify our concept, we performed theoretical analyses and experiments using a 2 mm  ×  2 mm  ×  2 mm 1-cell touch sensor. Finally, we obtained a capacitance variation of ∼30 pF by applying forces between 0 N and 1 N. (paper)

  13. Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

    Science.gov (United States)

    Saeidi, Ali; Jazaeri, Farzan; Stolichnov, Igor; Luong, Gia V.; Zhao, Qing-Tai; Mantl, Siegfried; Ionescu, Adrian M.

    2018-03-01

    This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a trained-polycrystalline PZT capacitor and the tunnel FET (TFET) gate capacitance fabricated on a strained silicon-nanowire technology. We report a non-hysteretic switch configuration by combining a homojunction TFET and a negative capacitance effect booster, suitable for logic applications, for which the on-current is increased by a factor of 100, the transconductance by 2 orders of magnitude, and the low swing region is extended. The operation of a hysteretic negative capacitance TFET, when the matching condition for the negative capacitance is fulfilled only in a limited region of operation, is also reported and discussed. In this late case, a limited improvement in the device performance is observed. Overall, the paper demonstrates the main beneficial effects of negative capacitance on TFETs are the overdrive and transconductance amplification, which exactly address the most limiting performances of current TFETs.

  14. SAR exposure from UHF RFID reader in adult, child, pregnant woman, and fetus anatomical models.

    Science.gov (United States)

    Fiocchi, Serena; Markakis, Ioannis A; Ravazzani, Paolo; Samaras, Theodoros

    2013-09-01

    The spread of radio frequency identification (RFID) devices in ubiquitous applications without their simultaneous exposure assessment could give rise to public concerns about their potential adverse health effects. Among the various RFID system categories, the ultra high frequency (UHF) RFID systems have recently started to be widely used in many applications. This study addresses a computational exposure assessment of the electromagnetic radiation generated by a realistic UHF RFID reader, quantifying the exposure levels in different exposure scenarios and subjects (two adults, four children, and two anatomical models of women 7 and 9 months pregnant). The results of the computations are presented in terms of the whole-body and peak spatial specific absorption rate (SAR) averaged over 10 g of tissue to allow comparison with the basic restrictions of the exposure guidelines. The SAR levels in the adults and children were below 0.02 and 0.8 W/kg in whole-body SAR and maximum peak SAR levels, respectively, for all tested positions of the antenna. On the contrary, exposure of pregnant women and fetuses resulted in maximum peak SAR(10 g) values close to the values suggested by the guidelines (2 W/kg) in some of the exposure scenarios with the antenna positioned in front of the abdomen and with a 100% duty cycle and 1 W radiated power. Copyright © 2013 Wiley Periodicals, Inc.

  15. Performance and Benchmarking of Multisurface UHF RFID Tags for Readability and Reliability

    Directory of Open Access Journals (Sweden)

    Joshua Bolton

    2017-01-01

    Full Text Available As the price of passive radio frequency identification (RFID tags continues to decrease, more and more companies are considering item-level tagging. Although the use of RFID is simple, its proper application should be studied to achieve maximum efficiency and utilization in the industry. This paper is intended to demonstrate the test results of various multisurface UHF tags from different manufacturers for their readability under varying conditions such as orientation of tags with respect to reader, distance of tag from the reader, and materials used for embedding tags. These conditions could affect the reliability of RFID systems used for varied applications. In this paper, we implement a Design for Six Sigma Research (DFSS-R methodology that allows for reliability testing of RFID systems. In this paper, we have showcased our results about the benchmarking of UHF RFID tags and have put forward an important observation about the blind spots observed at different distances and orientations along different surfaces, which is primarily due to the polarity of the antenna chosen.

  16. VHF/UHF radar observations of tropical mesoscale convective systems over southern India

    Directory of Open Access Journals (Sweden)

    K. Kishore Kumar

    2005-07-01

    Full Text Available Several campaigns have been carried out to study the convective systems over Gadanki (13.5° N, 79.2° E, a tropical station in India, using VHF and UHF radars. The height-time sections of several convective systems are investigated in detail to study reflectivity, turbulence and vertical velocity structure. Structure and dynamics of the convective systems are the main objectives of these campaigns. The observed systems are classified into single- and multi-cell systems. It has been observed that most of the convective systems at this latitude are multi-cellular in nature. Simultaneous VHF and UHF radar observations are used to classify the observed precipitating systems as convective, intermediary and stratiform regions. Composite height profiles of vertical velocities in these regions were obtained and the same were compared with the profiles obtained at other geographical locations. These composite profiles of vertical velocity in the convective regions have shown their peaks in the mid troposphere, indicating that the maximum latent heat is being released at those heights. These profiles are very important for numerical simulations of the convective systems, which vary significantly from one geographical location to the other.

    Keywords. Meteorology and atmospheric dynamics (Mesoscale meteorology; Convective processes – Radio science (Remote sensing

  17. VHF/UHF radar observations of tropical mesoscale convective systems over southern India

    Directory of Open Access Journals (Sweden)

    K. Kishore Kumar

    2005-07-01

    Full Text Available Several campaigns have been carried out to study the convective systems over Gadanki (13.5° N, 79.2° E, a tropical station in India, using VHF and UHF radars. The height-time sections of several convective systems are investigated in detail to study reflectivity, turbulence and vertical velocity structure. Structure and dynamics of the convective systems are the main objectives of these campaigns. The observed systems are classified into single- and multi-cell systems. It has been observed that most of the convective systems at this latitude are multi-cellular in nature. Simultaneous VHF and UHF radar observations are used to classify the observed precipitating systems as convective, intermediary and stratiform regions. Composite height profiles of vertical velocities in these regions were obtained and the same were compared with the profiles obtained at other geographical locations. These composite profiles of vertical velocity in the convective regions have shown their peaks in the mid troposphere, indicating that the maximum latent heat is being released at those heights. These profiles are very important for numerical simulations of the convective systems, which vary significantly from one geographical location to the other. Keywords. Meteorology and atmospheric dynamics (Mesoscale meteorology; Convective processes – Radio science (Remote sensing

  18. VHF/UHF imagery and RCS measurements of ground targets in forested terrain

    Science.gov (United States)

    Gatesman, Andrew J.; Beaudoin, Christopher J.; Giles, Robert H.; Waldman, Jerry; Nixon, William E.

    2002-08-01

    The monostatic VV and HH-polarized radar signatures of several targets and trees have been measured at foliage penetration frequencies (VHF/UHF) by using 1/35th scale models and an indoor radar range operating at X-band. An array of high-fidelity scale model ground vehicles and test objects as well as scaled ground terrain and trees have been fabricated for the study. Radar measurement accuracy has been confirmed by comparing the signature of a test object with a method of moments radar cross section prediction code. In addition to acquiring signatures of targets located on a smooth, dielectric ground plane, data have also been acquired with targets located in simulated wooded terrain that included scaled tree trunks and tree branches. In order to assure the correct backscattering behavior, all dielectric properties of live tree wood and moist soil were scaled properly to match the complex dielectric constant of the full-scale materials. The impact of the surrounding tree clutter on the VHF/UHF radar signatures of ground vehicles was accessed. Data were processed into high-resolution, polar-formatted ISAR imagery and signature comparisons are made between targets in open-field and forested scenarios.

  19. An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

    Science.gov (United States)

    Prashad, Har

    1992-07-01

    A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

  20. Capacitance enhancement via electrode patterning

    International Nuclear Information System (INIS)

    Ho, Tuan A.; Striolo, Alberto

    2013-01-01

    The necessity of increasing the energy density in electric double layer capacitors to meet current demand is fueling fundamental and applied research alike. We report here molecular dynamics simulation results for aqueous electrolytes near model electrodes. Particular focus is on the effect of electrode patterning on the structure of interfacial electrolytes, and on the potential drop between the solid electrodes and the bulk electrolytes. The latter is estimated by numerically integrating the Poisson equation using the charge densities due to water and ions accumulated near the interface as input. We considered uniform and patterned electrodes, both positively and negatively charged. The uniformly charged electrodes are modeled as graphite. The patterned ones are obtained by removing carbon atoms from the top-most graphene layer, yielding nanoscopic squares and stripes patterns. For simplicity, the patterned electrodes are effectively simulated as insulators (the charge remains localized on the top-most layer of carbon atoms). Our simulations show that the patterns alter the structure of water and the accumulation of ions at the liquid-solid interfaces. Using aqueous NaCl solutions, we found that while the capacitance calculated for three positively charged electrodes did not change much, that calculated for the negatively charged electrodes significantly increased upon patterning. We find that both water structure and orientation, as well as ion accumulation affect the capacitance. As electrode patterning affects differently water structure and ion accumulation, it might be possible to observe ion-specific effects. These results could be useful for advancing our understanding of electric double layer capacitors, capacitive desalination processes, as well as of fundamental interfacial electrolytes properties

  1. Aspheric surface measurement using capacitive probes

    Science.gov (United States)

    Tao, Xin; Yuan, Daocheng; Li, Shaobo

    2017-02-01

    With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

  2. Study of the frequency modulation of various U.H.F. signals occurring in a linear electron accelerator; Etude de la modulation de frequence de divers signaux U.H.F. existant dans un accelerateur lineaire d'electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bergere, R; Veyssiere, A; Daujat, P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1966-06-01

    This paper contains a digest of a series of studies on the frequency modulation of U.H.F. fields and signals associated with the linear electron accelerator at Saclay. We first consider the frequency modulation of a U. H. F. pulse before its injection into an accelerating structure and after its subsequent propagation when no accelerated electrons are present. We then apply a similar analysis to the frequency modulation due to the direct interaction of the electron beam itself, and the accelerating U.H.F. fields. Finally we consider the phase modulation of the elementary electron packet itself. This phase modulation can be correctly interpreted by considering the dynamics of the electron beam as such. This analysis moreover, gives a correct interpretation of the evolution of the phase modulation with time, as the elementary electron packets move along with the sinusoidal U.H.F. accelerating fields. (authors) [French] Cet article resume les etudes faites sur l'accelerateur lineaire d'electrons de Saclay a propos de la modulation de frequence des divers signaux U.H.F. presents autour de l'accelerateur. On etudie d'abord la modulation de frequence des impulsions U.H.F. entrant sur la structure acceleratrice ou transmises par cette structure en l'absence de faisceau d'electrons acceleres. On analyse ensuite la modulation de frequence resultant de l'interaction d'une de ces ondes avec le faisceau d'electrons acceleres. On etudie enfin, la modulation de phase des divers paquets elementaires constituant une impulsion d'electrons acceleres. On montre comment cette modulation de phase peut s'expliquer par des considerations sur la dynamique du faisceau et conduire a une representation dans les divers cas possibles de l'evolution de la phase d'accrochage des electrons sur l'onde sinusoidale progressive de champ accelerateur. (auteurs)

  3. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed

    2015-08-02

    In this paper, a capacitive temperature sensor based on polyvinylidene fluoride (PVDF) capacitor is explored. The PVDF capacitor is characterized below its Curie temperature. The capacitance of the PVDF capacitor changes vs temperature with a sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  4. Recent applications of UHF-MRI in the study of human brain function and structure : a review

    NARCIS (Netherlands)

    Van der Zwaag, W.; Schäfer, Andreas; Marques, José P; Turner, R.; Trampel, Robert

    The increased availability of ultra-high-field (UHF) MRI has led to its application in a wide range of neuroimaging studies, which are showing promise in transforming fundamental approaches to human neuroscience. This review presents recent work on structural and functional brain imaging, at 7 T and

  5. Capacitive Feedthroughs for Medical Implants.

    Science.gov (United States)

    Grob, Sven; Tass, Peter A; Hauptmann, Christian

    2016-01-01

    Important technological advances in the last decades paved the road to a great success story for electrically stimulating medical implants, including cochlear implants or implants for deep brain stimulation. However, there are still many challenges in reducing side effects and improving functionality and comfort for the patient. Two of the main challenges are the wish for smaller implants on one hand, and the demand for more stimulation channels on the other hand. But these two aims lead to a conflict of interests. This paper presents a novel design for an electrical feedthrough, the so called capacitive feedthrough, which allows both reducing the size, and increasing the number of included channels. Capacitive feedthroughs combine the functionality of a coupling capacitor and an electrical feedthrough within one and the same structure. The paper also discusses the progress and the challenges of the first produced demonstrators. The concept bears a high potential in improving current feedthrough technology, and could be applied on all kinds of electrical medical implants, even if its implementation might be challenging.

  6. Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

    Directory of Open Access Journals (Sweden)

    Bassani Franck

    2011-01-01

    Full Text Available Abstract In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

  7. A new interface weak-capacitance detection ASIC of capacitive liquid level sensor in the rocket

    Science.gov (United States)

    Yin, Liang; Qin, Yao; Liu, Xiao-Wei

    2017-11-01

    A new capacitive liquid level sensing interface weak-capacitance detection ASIC has been designed. This ASIC realized the detection of the output capacitance of the capacitive liquid level sensor, which converts the output capacitance of the capacitive liquid level sensor to voltage. The chip is fabricated in a standard 0.5μm CMOS process. The test results show that the linearity of capacitance detection of the ASIC is 0.05%, output noise is 3.7aF/Hz (when the capacitance which will be detected is 40 pF), the stability of capacitance detection is 7.4 × 10-5pF (1σ, 1h), the output zero position temperature coefficient is 4.5 uV/∘C. The test results prove that this interface ASIC can meet the requirement of high accuracy capacitance detection. Therefore, this interface ASIC can be applied in capacitive liquid level sensing and capacitive humidity sensing field.

  8. Design of a passive UHF RFID tag for the ISO18000-6C protocol

    International Nuclear Information System (INIS)

    Wang Yao; Wen Guangjun; Mao Wei; He Yanli; Zhu Xueyong

    2011-01-01

    This paper presents a new fully integrated wide-range UHF passive RFID tag chip design that is compatible with the ISO18000-6C protocol. In order to reduce the die area, an ultra-low power CMOS voltage regulator without resistors and an area-efficient amplitude shift keying demodulator with a novel adaptive average generator are both adopted. A low power clock generator is designed to guarantee the accuracy of the clock under ±4%. As the clock gating technology is employed to reduce the power consumption of the baseband processor, the total power consumption of the tag is about 14 μW with a sensitivity of -9.5 dBm. The detection distance can reach about 5 m under 4 W effective isotropic radiated power. The whole tag is fabricated in TSMC 0.18 μm CMOS technology and the chip size is 880 x 880 μm 2 . (semiconductor integrated circuits)

  9. CPW-Fed Wideband Circular Polarized Antenna for UHF RFID Applications

    Directory of Open Access Journals (Sweden)

    Sun-Woong Kim

    2017-01-01

    Full Text Available We propose a wide bandwidth antenna with a circular polarization for universal Ultra High Frequency (UHF radio-frequency identification (RFID reader applications. To achieve a wide 3 dB axial ratio (AR bandwidth, three T-shaped microstrip lines are inserted into the ground plane. The measured impedance bandwidth of the proposed antenna is 480 MHz and extends from 660 to 1080 MHz, and the 3 dB AR bandwidth is 350 MHz and extends from 800 to 1155 MHz. The radiation pattern is a bidirectional pattern with a maximum antenna gain of 3.67 dBi. The overall size of the proposed antenna is 114 × 114 × 0.8 mm3.

  10. Passive UHF RFID Tags with Specific Printed Antennas for Dielectric and Metallic Objects Applications

    Directory of Open Access Journals (Sweden)

    K. Siakavara

    2017-09-01

    Full Text Available Design process and respective results for the synthesis of specific Radiofrequency Identification(RFID tag antennas, suitable for dielectric and metallic objects, are presented. The antennas were designed for the UHF(865MHz-869MHz band and their basic configuration is that of the printed spiral type. Six modification steps to the classical spiral layout are proposed and it was proved that they can lead to tags with high readability and reading distances up to 10m when designed for dielectric object and up to 7m in the case of metallic objects. The results of the measurements of the fabricated tags are explained via theoretical evaluations which take into account reflection phenomena, that are present in a real environment at which the tags are used.

  11. Experimental Study on Strain Reliability of Embroidered Passive UHF RFID Textile Tag Antennas and Interconnections

    Directory of Open Access Journals (Sweden)

    Xiaochen Chen

    2017-01-01

    Full Text Available We present embroidered antennas and interconnections in passive UHF RFID textile tags and test their strain reliability. Firstly, we fabricate tag antennas on two different stretchable fabric substrates by five different embroidery patterns and choose the most stretchable ones for testing. Next, the tag ICs are attached by sewing and gluing, and the tag reliability during repeated stretching cycles is evaluated through wireless measurements. Initially, the chosen tags achieve read ranges of 6–8 meters and can strain up to 140–150% of their original length. After 100 stretching cycles to 80% of their maximum strain, the read ranges of the tags with glued interconnections are similar to the initial values. In addition, also the read ranges of the tags with sewed interconnections are still more than 70%–85% of their initial values. However, some challenges with the reproducibility need to be solved next.

  12. Design of a passive UHF RFID tag for the ISO18000-6C protocol

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yao; Wen Guangjun; Mao Wei; He Yanli; Zhu Xueyong, E-mail: wangyao220597@yahoo.com.cn [RFIC Laboratory CICS, School of Communication and Information Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

    2011-05-15

    This paper presents a new fully integrated wide-range UHF passive RFID tag chip design that is compatible with the ISO18000-6C protocol. In order to reduce the die area, an ultra-low power CMOS voltage regulator without resistors and an area-efficient amplitude shift keying demodulator with a novel adaptive average generator are both adopted. A low power clock generator is designed to guarantee the accuracy of the clock under {+-}4%. As the clock gating technology is employed to reduce the power consumption of the baseband processor, the total power consumption of the tag is about 14 {mu}W with a sensitivity of -9.5 dBm. The detection distance can reach about 5 m under 4 W effective isotropic radiated power. The whole tag is fabricated in TSMC 0.18 {mu}m CMOS technology and the chip size is 880 x 880 {mu}m{sup 2}. (semiconductor integrated circuits)

  13. Low-cost low-power UHF RFID tag with on-chip antenna

    Energy Technology Data Exchange (ETDEWEB)

    Xi Jingtian; Yan Na; Che Wenyi; Xu Conghui; Wang Xiao; Yang Yuqing; Jian Hongyan; Min Hao, E-mail: jtxi@fudan.edu.c [State Key Laboratory of ASIC and System, Auto-ID Laboratory, Fudan University, Shanghai 201203 (China)

    2009-07-15

    This paper presents an EPC Class 1 Generation 2 compatible tag with on-chip antenna implemented in the SMIC 0.18 {mu}m standard CMOS process. The UHF tag chip includes an RF/analog front-end, a digital baseband, and a 640-bit EEPROM memory. The on-chip antenna is optimized based on a novel parasitic-aware model. The rectifier is optimized to achieve a power conversion efficiency up to 40% by applying a self-bias feedback and threshold compensation techniques. A good match between the tag circuits and the on-chip antenna is realized by adjusting the rectifier input impedance. Measurements show that the presented tag can achieve a communication range of 1 cm with 1 W reader output power using a 1 x 1 cm{sup 2} single-turn loop reader antenna.

  14. Design of an ultra-low-power digital processor for passive UHF RFID tags

    Energy Technology Data Exchange (ETDEWEB)

    Shi Wanggen; Zhuang Yiqi; Li Xiaoming; Wang Xianghua; Jin Zhao; Wang Dan, E-mail: wanggen_shi@163.co [Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi' an 710071 (China)

    2009-04-15

    A new architecture of digital processors for passive UHF radio-frequency identification tags is proposed. This architecture is based on ISO/IEC 18000-6C and targeted at ultra-low power consumption. By applying methods like system-level power management, global clock gating and low voltage implementation, the total power of the design is reduced to a few microwatts. In addition, an innovative way for the design of a true RNG is presented, which contributes to both low power and secure data transaction. The digital processor is verified by an integrated FPGA platform and implemented by the Synopsys design kit for ASIC flows. The design fits different CMOS technologies and has been taped out using the 2P4M 0.35 mum process of Chartered Semiconductor.

  15. A passive UHF RFID tag with a dynamic-Vth-cancellation rectifier

    International Nuclear Information System (INIS)

    Shen Jinpeng; Wang Bo; Liu Shan; Wang Xin'an; Ruan Zhengkun; Li Shoucheng

    2013-01-01

    This paper presents a passive UHF RFID tag with a dynamic-V th -cancellation (DVC) rectifier. In the rectifier, the threshold voltages of MOSFETs are cancelled by applying gate bias voltages, which are dynamically changed according to the states of the MOSFETs. The DVC rectifier enables both low ON-resistance and small reverse leakage of the MOSFETs, resulting in high power conversion efficiency (PCE). An area-efficient demodulator with a novel average detector is also designed, which takes advantage of the rectifier's first stage as the envelope detector. The whole tag chip is implemented in a 0.18 μm CMOS process with a die size of 880 × 950 μm 2 . Measurement results show that the rectifier achieves a maximum PCE of 53.7% with 80 kΩ resistor load. (semiconductor integrated circuits)

  16. Extended post processing for simulation results of FEM synthesized UHF-RFID transponder antennas

    Directory of Open Access Journals (Sweden)

    R. Herschmann

    2007-06-01

    Full Text Available The computer aided design process of sophisticated UHF-RFID transponder antennas requires the application of reliable simulation software. This paper describes a Matlab implemented extension of the post processor capabilities of the commercially available three dimensional field simulation programme Ansoft HFSS to compute an accurate solution of the antenna's surface current distribution. The accuracy of the simulated surface currents, which are physically related to the impedance at the feeding point of the antenna, depends on the convergence of the electromagnetic fields inside the simulation volume. The introduced method estimates the overall quality of the simulation results by combining the surface currents with the electromagnetic fields extracted from the field solution of Ansoft HFSS.

  17. Design of an ultra-low-power digital processor for passive UHF RFID tags

    International Nuclear Information System (INIS)

    Shi Wanggen; Zhuang Yiqi; Li Xiaoming; Wang Xianghua; Jin Zhao; Wang Dan

    2009-01-01

    A new architecture of digital processors for passive UHF radio-frequency identification tags is proposed. This architecture is based on ISO/IEC 18000-6C and targeted at ultra-low power consumption. By applying methods like system-level power management, global clock gating and low voltage implementation, the total power of the design is reduced to a few microwatts. In addition, an innovative way for the design of a true RNG is presented, which contributes to both low power and secure data transaction. The digital processor is verified by an integrated FPGA platform and implemented by the Synopsys design kit for ASIC flows. The design fits different CMOS technologies and has been taped out using the 2P4M 0.35 μm process of Chartered Semiconductor.

  18. Wide-Range Adaptive RF-to-DC Power Converter for UHF RFIDs

    KAUST Repository

    Ouda, Mahmoud H.

    2016-07-27

    A wide-range, differential, cross-coupled rectifier is proposed with an extended dynamic range of input RF power that enables wireless powering from varying distances. The proposed architecture mitigates the reverse-leakage problem in conven- tional, cross-coupled rectifiers without degrading sensitivity. A prototype is designed for UHF RFID applications, and is imple- mented using 0.18 μ m CMOS technology. On-chip measurements demonstrate a sensitivity of − 18 dBm for 1 V output over a 100 k Ω load and a peak RF-to-DC power conversion efficiency of 65%. A conventional, fully cross-coupled rectifier is fabricated along- side for comparison and the proposed rectifier shows more than 2 × increase in dynamic range and a 25% boosting in output voltage than the conventional rectifier

  19. Small Size and Low Cost UHF RFID Tag Antenna Mountable on Metallic Objects

    Directory of Open Access Journals (Sweden)

    Sergio López-Soriano

    2015-01-01

    Full Text Available Reducing tag size while maintaining good performance is one of the major challenges in radio-frequency identification applications (RFID, in particular when labeling metallic objects. In this contribution, a small size and low cost tag antenna for identifying metal objects in the European UHF band (865–868 MHz is presented. The antenna consists of a transmission line mounted on an inexpensive thin dielectric which is proximity-coupled to a short-ended patch mounted on FR4 substrate. The overall dimensions of the tag are 33.5 × 30 × 3.1 mm. Experimental results show that, for an EIRP of 3.2 W (European regulations, such a small and cheap tag attains read ranges of about 5 m when attached to a metallic object.

  20. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  1. The split delivery capacitated team orienteering problem

    NARCIS (Netherlands)

    Archetti, C.; Bianchessi, N.; Speranza, M. G.; Hertz, A.

    2014-01-01

    In this article, we study the capacitated team orienteering problem where split deliveries are allowed. A set of potential customers is given, each associated with a demand and a profit. The set of customers to be served by a fleet of capacitated vehicles has to be identified in such a way that the

  2. Capacitance densitometer for flow regime identification

    International Nuclear Information System (INIS)

    Shipp, R.L. Jr.

    1978-01-01

    This invention relates to a capacitance densitometer for determining the flow regime of a two-phase flow system. A two-element capacitance densitometer is used in conjunction with a conventional single-beam gamma densitometer to unambiguously identify the prevailing flow regime and the average density of a flowing fluid

  3. Design of double capacitances infrasonic receiver

    International Nuclear Information System (INIS)

    Wang Changhai; Han Kuixia; Wang Fei

    2003-01-01

    The article introduces the theory of infrasonic generation and reception of nuclear explosion. An idea of the design of double capacitances infrasonic receiver using CPLD technology is given in it. Compare with the single capacitance infrasonic receiver, sensitivity of the improved receiver can be improved scores of times, dynamic range can be improved largely, and the whole performance gets improvement a lots

  4. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  5. The Pyramidal Capacitated Vehicle Routing Problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    This paper introduces the Pyramidal Capacitated Vehicle Routing Problem (PCVRP) as a restricted version of the Capacitated Vehicle Routing Problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the Pyramidal Traveling Salesman Problem (PTSP). A pyramidal...

  6. The pyramidal capacitated vehicle routing problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    2010-01-01

    This paper introduces the pyramidal capacitated vehicle routing problem (PCVRP) as a restricted version of the capacitated vehicle routing problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the pyramidal traveling salesman problem (PTSP). A pyramidal...

  7. Scanning Capacitance Microscopy | Materials Science | NREL

    Science.gov (United States)

    obtained using scanning capacitance microscopy. Top Right: Image of p-type and n-type material, obtained 'fingers' of light-colored n-type material on a yellow and blue background representing p-type material material, obtained using scanning capacitance microscopy, in a sample semiconductor device; the image shows

  8. Long range ultra-high frequency (UHF) radio frequency identification (RFID) antenna design

    Science.gov (United States)

    Reynolds, Nathan D.

    There is an ever-increasing demand for radio frequency identification (RFID) tags that are passive, long range, and mountable on multiple surfaces. Currently, RFID technology is utilized in numerous applications such as supply chain management, access control, and public transportation. With the combination of sensory systems in recent years, the applications of RFID technology have been extended beyond tracking and identifying. This extension includes applications such as environmental monitoring and healthcare applications. The available sensory systems usually operate in the medium or high frequency bands and have a low read range. However, the range limitations of these systems are being overcome by the development of RFID sensors focused on utilizing tags in the ultra-high frequency (UHF) band. Generally, RFID tags have to be mounted to the object that is being identified. Often the objects requiring identification are metallic. The inherent properties of metallic objects have substantial effects on nearby electromagnetic radiation; therefore, the operation of the tag antenna is affected when mounted on a metallic surface. This outlines one of the most challenging problems for RFID systems today: the optimization of tag antenna performance in a complex environment. In this research, a novel UHF RFID tag antenna, which has a low profile, long range, and is mountable on metallic surfaces, is designed analytically and simulated using a 3-D electromagnetic simulator, ANSYS HFSS. A microstrip patch antenna is selected as the antenna structure, as patch antennas are low profile and suitable for mounting on metallic surfaces. Matching and theoretical models of the microstrip patch antenna are investigated. Once matching and theory of a microstrip patch antenna is thoroughly understood, a unique design technique using electromagnetic band gap (EBG) structures is explored. This research shows that the utilization of an EBG structure in the patch antenna design yields

  9. Meteor head echo polarization at 930 MHz studied with the EISCAT UHF HPLA radar

    Directory of Open Access Journals (Sweden)

    G. Wannberg

    2011-06-01

    Full Text Available The polarization characteristics of 930-MHz meteor head echoes have been studied for the first time, using data obtained in a series of radar measurements carried out with the tristatic EISCAT UHF high power, large aperture (HPLA radar system in October 2009. An analysis of 44 tri-static head echo events shows that the polarization of the echo signal recorded by the Kiruna receiver often fluctuates strongly on time scales of tens of microseconds, illustrating that the scattering process is essentially stochastic. On longer timescales (> milliseconds, more than 90 % of the recorded events show an average polarization signature that is independent of meteor direction of arrival and echo strength and equal to that of an incoherent-scatter return from underdense plasma filling the tristatic observation volume. This shows that the head echo plasma targets scatter isotropically, which in turn implies that they are much smaller than the 33-cm wavelength and close to spherically symmetric, in very good agreement with results from a previous EISCAT UHF study of the head echo RCS/meteor angle-of-incidence relationship. Significant polarization is present in only three events with unique target trajectories. These all show a larger effective target cross section transverse to the trajectory than parallel to it. We propose that the observed polarization may be a signature of a transverse charge separation plasma resonance in the region immediately behind the meteor head, similar to the resonance effects previously discussed in connection with meteor trail echoes by Herlofson, Billam and Browne, Jones and Jones and others.

  10. Capacitive Biosensors and Molecularly Imprinted Electrodes.

    Science.gov (United States)

    Ertürk, Gizem; Mattiasson, Bo

    2017-02-17

    Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

  11. Label-free detection of sex determining region Y (SRY) via capacitive biosensor

    KAUST Repository

    Sivashankar, Shilpa

    2016-10-20

    In this work, we present for the first time, the use of a simple fractal capacitive biosensor for the quantification and detection of sex-determining region Y (SRY) genes. This section of genetic code, which is found on the Y chromosome, finds importance for study as it causes fetuses to develop characteristics of male sex-like gonads when a mutation occurs. It is also an important genetic code in men, and disorders involving the SRY gene can cause infertility and sexual malfunction that lead to a variety of gene mutational disorders. We have therefore designed silicon-based, label-free fractal capacitive biosensors to quantify various proteins and genes. We take advantage of a good dielectric material, Parylene C for enhancing the performance of the sensors. We have integrated these sensors with a simple microchannel for easy handling of fluids on the detection area. The read-out value of an Agilent LCR meter used to measure capacitance of the sensor at a frequency of 1 MHz determined gene specificity and gene quantification. These data revealed that the capacitance measurement of the capacitive biosensor for the SRY gene depended on both the target and the concentration of DNA. The experimental outcomes in the present study can be used to detect DNA and its variations in crucial fields that have a great impact on our daily lives, such as clinical and veterinary diagnostics, industrial and environmental testing and forensic sciences.

  12. TOSCA simulation of some effects observed in irradiated silicon detectors

    International Nuclear Information System (INIS)

    Moszczynski, A.S.

    2001-12-01

    TOSCA package has been used to simulate some effects observed recently in heavily irradiated silicon detectors. In particular, unexpected possibility of α-particle registration at p+ contact has been explained without presented elsewhere assumption that there was p-n junction of unknown origin beneath p+ layer. Performed simulations showed that assumption on relaxation-like character of irradiated silicon material is also not necessary to explain such effects like low-voltage capacitance peak in reverse bias and negative capacitance in forward bias. (author)

  13. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  14. Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

    Science.gov (United States)

    Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

    2018-02-01

    P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

  15. Reducing the capacitance of piezoelectric film sensors

    Energy Technology Data Exchange (ETDEWEB)

    González, Martín G., E-mail: mggonza@fi.uba.ar [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), C1425FQB Buenos Aires (Argentina); Sorichetti, Patricio A.; Santiago, Guillermo D. [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina)

    2016-04-15

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N{sup 2}, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  16. Reducing the capacitance of piezoelectric film sensors

    International Nuclear Information System (INIS)

    González, Martín G.; Sorichetti, Patricio A.; Santiago, Guillermo D.

    2016-01-01

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N"2, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  17. Improved capacitive melting curve measurements

    International Nuclear Information System (INIS)

    Sebedash, Alexander; Tuoriniemi, Juha; Pentti, Elias; Salmela, Anssi

    2009-01-01

    Sensitivity of the capacitive method for determining the melting pressure of helium can be enhanced by loading the empty side of the capacitor with helium at a pressure nearly equal to that desired to be measured and by using a relatively thin and flexible membrane in between. This way one can achieve a nanobar resolution at the level of 30 bar, which is two orders of magnitude better than that of the best gauges with vacuum reference. This extends the applicability of melting curve thermometry to lower temperatures and would allow detecting tiny anomalies in the melting pressure, which must be associated with any phenomena contributing to the entropy of the liquid or solid phases. We demonstrated this principle in measurements of the crystallization pressure of isotopic helium mixtures at millikelvin temperatures by using partly solid pure 4 He as the reference substance providing the best possible universal reference pressure. The achieved sensitivity was good enough for melting curve thermometry on mixtures down to 100 μK. Similar system can be used on pure isotopes by virtue of a blocked capillary giving a stable reference condition with liquid slightly below the melting pressure in the reference volume. This was tested with pure 4 He at temperatures 0.08-0.3 K. To avoid spurious heating effects, one must carefully choose and arrange any dielectric materials close to the active capacitor. We observed some 100 pW loading at moderate excitation voltages.

  18. Disordered redox metabolism of brain cells in rats exposed to low doses of ionizing radiation or UHF electromagnetic radiation.

    Science.gov (United States)

    Burlaka, A P; Druzhyna, M O; Vovk, A V; Lukin, S М

    2016-12-01

    To investigate the changes of redox-state of mammalian brain cells as the critical factor of initiation and formation of radiation damage of biological structures in setting of continuous exposure to low doses of ionizing radiation or fractionated ultra high frequency electromagnetic radiation (UHF EMR) at non-thermal levels. The influence of low-intensity ionizing radiation was studied on outbred female rats kept for 1.5 years in the Chernobyl accident zone. The effects of total EMR in the UHF band of non-thermal spectrum were investigated on Wistar rats. The rate of formation of superoxide radicals and the rate of NO synthesis in mitochondria were determined by the EPR. After exposure to ionizing or UHF radiation, the levels of ubisemiquinone in brain tissue of rats decreased by 3 and 1.8 times, respectively. The content of NO-FeS-protein complexes in both groups increased significantly (р < 0.05). In the conditions of ionizing or EMR the rates of superoxide radical generation in electron-transport chain of brain cell mitochondria increased by 1.5- and 2-fold, respectively (р < 0.05). In brain tissue of rats kept in the Chernobyl zone, significant increase of NO content was registered; similar effect was observed in rats treated with UHFR (р < 0.05). The detected changes in the electron transport chain of mitochondria of brain cells upon low-intensity irradiation or UHF EMR cause the metabolic reprogramming of cell mitochondria that increases the rate of superoxide radical generation and nitric oxide, which may initiate the development of neurodegenerative diseases and cancer. This article is part of a Special Issue entitled "The Chornobyl Nuclear Accident: Thirty Years After".

  19. Development of two U.H.F. band resonators for application to CO2 laser electro-optical modulation

    International Nuclear Information System (INIS)

    Egan, M.G.; Blanc, P.; Sexton, M.C.

    1980-01-01

    The purpose of this report is to describe the design and testing of two U.H.F. band resonators destined for use in the linear electro-optical modulator of the CO 2 Laser Rapid Interferometer diagnostic at present under development for the WEGA Tokamak. The resonators take the form of a re-entrant coaxial line cavity and an interdigital line filter, both of which possess the regions of high electric field necessary to activate the linear electro-optical effect

  20. Meteor head echo altitude distributions and the height cutoff effect studied with the EISCAT HPLA UHF and VHF radars

    Directory of Open Access Journals (Sweden)

    A. Westman

    2004-04-01

    Full Text Available Meteor head echo altitude distributions have been derived from data collected with the EISCAT VHF (224MHz and UHF (930MHz high-power, large-aperture (HPLA radars. At the high-altitude end, the distributions cut off abruptly in a manner reminiscent of the trail echo height ceiling effect observed with classical meteor radars. The target dimensions are shown to be much smaller than both the VHF and the UHF probing wavelengths, but the cutoff heights for the two systems are still clearly different, the VHF cutoff being located several km above the UHF one. A single-collision meteor-atmosphere interaction model is used to demonstrate that meteors in the (1.3–7.2µg mass range will ionise such that critical electron density at 224MHz is first reached at or around the VHF cutoff altitude and critical density at 930MHz will be reached at the UHF cutoff altitude. The observed seasonal variation in the cutoff altitudes is shown to be a function of the seasonal variation of atmospheric density with altitude. Assuming that the electron density required for detection is in the order of the critical density, the abrupt altitude cutoffs can be explained as a consequence of the micrometeoroid joint size-speed distribution dropping off so fast at the large-mass, high-velocity end that above a certain altitude the number of detectable events becomes vanishingly small. Conversely, meteors at the low-mass end of the distribution will be gradually retarded such that the ionisation they generate never reaches critical density. These particles will remain unobservable.Key words. Radio science (instruments and techniques – Interplatery physics (interplanetary dust – General or miscellaneous (new fields

  1. Are tomorrow's micro-supercapacitors hidden in a forest of silicon nanotrees?

    Science.gov (United States)

    Thissandier, Fleur; Gentile, Pascal; Brousse, Thierry; Bidan, Gérard; Sadki, Saïd

    2014-12-01

    Silicon nanotrees (SiNTrs) have been grown by Chemical Vapor Deposition (CVD) via gold catalysis and a three steps process: trunks and branches growth are separated by a new gold catalyst deposition. The influence of growth conditions and the second gold catalyst deposition method on SiNTrs morphology are investigated. SiNTrs based electrodes show a capacitive behavior and better capacitance than the corresponding silicon nanowires (SiNWs) electrode. Electrode capacitance is increased up to 900 μF cm-2, i.e. 150 fold higher than for bulk silicon. Micro-supercapacitors with SiNTrs electrodes have a remarkable stability (only 1.2% loses of their initial capacitance after more than one million cycles). The use of an ionic liquid based electrolyte leads to a high maximum power density (around 225 mW cm-2) which is competitive with Onion Like Carbon based micro-supercapacitors.

  2. Disturbances in VHF/UHF telemetry links as a possible effect of the 2003 Hokkaido Tokachi-oki earthquake

    Directory of Open Access Journals (Sweden)

    H. Nagamoto

    2008-08-01

    Full Text Available The data on radio telemetry links (for water information at VHF/UHF in Hokkaido are used to investigate the rate of disturbances on radio links (or connection failure and its association with a huge earthquake, Tokachi-oki earthquake on 26 September 2003. Especially, the telemetry links at the Tokachi region closest to the earthquake epicenter, showed a significant increase in disturbances on radio links two weeks to a few days before the earthquake on the basis of analysis during a long interval from 1 June 2002 to 3 November 2007 (over 5 years. We suggest that these severe disturbances in VHF/UHF telemetry links are attributed to the generation of seismogenic VHF/UHF radio noises (emissions. Based on this idea, we have estimated that the intensity of these seismogenic emissions is on the order of 10–19 dB μV/m. Finally, the present result was compared with other physical parameters already obtained for this earthquake.

  3. Resistive and Capacitive Based Sensing Technologies

    Directory of Open Access Journals (Sweden)

    Winncy Y. Du

    2008-04-01

    Full Text Available Resistive and capacitive (RC sensors are the most commonly used sensors. Their applications span homeland security, industry, environment, space, traffic control, home automation, aviation, and medicine. More than 30% of modern sensors are direct or indirect applications of the RC sensing principles. This paper reviews resistive and capacitive sensing technologies. The physical principles of resistive sensors are governed by several important laws and phenomena such as Ohm’s Law, Wiedemann-Franz Law; Photoconductive-, Piezoresistive-, and Thermoresistive Effects. The applications of these principles are presented through a variety of examples including accelerometers, flame detectors, pressure/flow rate sensors, RTDs, hygristors, chemiresistors, and bio-impedance sensors. The capacitive sensors are described through their three configurations: parallel (flat, cylindrical (coaxial, and spherical (concentric. Each configuration is discussed with respect to its geometric structure, function, and application in various sensor designs. Capacitance sensor arrays are also presented in the paper.

  4. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  5. Complementary surface charge for enhanced capacitive deionization

    NARCIS (Netherlands)

    Gao, X.; Porada, S.; Omosebi, A.; Liu, K.L.; Biesheuvel, P.M.; Landon, J.

    2016-01-01

    Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI

  6. Vertical velocity and turbulence aspects during Mistral events as observed by UHF wind profilers

    Directory of Open Access Journals (Sweden)

    J.-L. Caccia

    2004-11-01

    Full Text Available The general purpose of this paper is to experimentally study mesoscale dynamical aspects of the Mistral in the coastal area located at the exit of the Rhône-valley. The Mistral is a northerly low-level flow blowing in southern France along the Rhône-valley axis, located between the French Alps and the Massif Central, towards the Mediterranean Sea. The experimental data are obtained by UHF wind profilers deployed during two major field campaigns, MAP (Mesoscale Alpine Program in autumn 1999, and ESCOMPTE (Expérience sur Site pour COntraindre les Modèles de Pollution atmosphériques et de Transports d'Emission in summer 2001. Thanks to the use of the time evolution of the vertical profile of the horizontal wind vector, recent works have shown that the dynamics of the Mistral is highly dependent on the season because of the occurrence of specific synoptic patterns. In addition, during summer, thermal forcing leads to a combination of sea breeze with Mistral and weaker Mistral due to the enhanced friction while, during autumn, absence of convective turbulence leads to substantial acceleration as low-level jets are generated in the stably stratified planetary boundary layer. At the exit of the Rhône valley, the gap flow dynamics dominates, whereas at the lee of the Alps, the dynamics is driven by the relative contribution of "flow around" and "flow over" mechanisms, upstream of the Alps. This paper analyses vertical velocity and turbulence, i.e. turbulent dissipation rate, with data obtained by the same UHF wind profilers during the same Mistral events. In autumn, the motions are found to be globally and significantly subsident, which is coherent for a dry, cold and stable flow approaching the sea, and the turbulence is found to be of pure dynamical origin (wind shears and mountain/lee wave breaking, which is coherent with non-convective situations. In summer, due to the ground heating and to the interactions with thermal circulation, the

  7. Vertical velocity and turbulence aspects during Mistral events as observed by UHF wind profilers

    Science.gov (United States)

    Caccia, J.; Guénard, V.; Benech, B.; Campistron, B.; Drobinski, P.

    2004-11-01

    The general purpose of this paper is to experimentally study mesoscale dynamical aspects of the Mistral in the coastal area located at the exit of the Rhône-valley. The Mistral is a northerly low-level flow blowing in southern France along the Rhône-valley axis, located between the French Alps and the Massif Central, towards the Mediterranean Sea. The experimental data are obtained by UHF wind profilers deployed during two major field campaigns, MAP (Mesoscale Alpine Program) in autumn 1999, and ESCOMPTE (Expérience sur Site pour COntraindre les Modèles de Pollution atmosphériques et de Transports d'Emission) in summer 2001. Thanks to the use of the time evolution of the vertical profile of the horizontal wind vector, recent works have shown that the dynamics of the Mistral is highly dependent on the season because of the occurrence of specific synoptic patterns. In addition, during summer, thermal forcing leads to a combination of sea breeze with Mistral and weaker Mistral due to the enhanced friction while, during autumn, absence of convective turbulence leads to substantial acceleration as low-level jets are generated in the stably stratified planetary boundary layer. At the exit of the Rhône valley, the gap flow dynamics dominates, whereas at the lee of the Alps, the dynamics is driven by the relative contribution of "flow around" and "flow over" mechanisms, upstream of the Alps. This paper analyses vertical velocity and turbulence, i.e. turbulent dissipation rate, with data obtained by the same UHF wind profilers during the same Mistral events. In autumn, the motions are found to be globally and significantly subsident, which is coherent for a dry, cold and stable flow approaching the sea, and the turbulence is found to be of pure dynamical origin (wind shears and mountain/lee wave breaking), which is coherent with non-convective situations. In summer, due to the ground heating and to the interactions with thermal circulation, the vertical motions are

  8. Vertical velocity and turbulence aspects during Mistral events as observed by UHF wind profilers

    Energy Technology Data Exchange (ETDEWEB)

    Caccia, J.L.; Guenard, V. [LSEET, CNRS/Univ. de Toulon, La Garde (France); Benech, B.; Campistron, B. [CRA/LA, CNRS/Obs. Midi-Pyrenees, Campistrous (France); Drobinski, P. [IPSL/SA, CNRS/Univ. de Paris VI, Paris (France)

    2004-07-01

    The general purpose of this paper is to experimentally study mesoscale dynamical aspects of the Mistral in the coastal area located at the exit of the Rhone-valley. The Mistral is a northerly low-level flow blowing in southern France along the Rhone-valley axis, located between the French Alps and the Massif Central, towards the Mediterranean Sea. The experimental data are obtained by UHF wind profilers deployed during two major field campaigns, MAP (mesoscale alpine program) in autumn 1999, and ESCOMPTE (Experience sur Site pour COntraindre les Modeles de Pollution atmospheriques et de Transports d'Emission) in summer 2001. Thanks to the use of the time evolution of the vertical profile of the horizontal wind vector, recent works have shown that the dynamics of the Mistral is highly dependent on the season because of the occurrence of specific synoptic patterns. In addition, during summer, thermal forcing leads to a combination of sea breeze with Mistral and weaker Mistral due to the enhanced friction while, during autumn, absence of convective turbulence leads to substantial acceleration as low-level jets are generated in the stably stratified planetary boundary layer. At the exit of the Rhone valley, the gap flow dynamics dominates, whereas at the lee of the Alps, the dynamics is driven by the relative contribution of ''flow around'' and ''flow over'' mechanisms, upstream of the Alps. This paper analyses vertical velocity and turbulence, i.e. turbulent dissipation rate, with data obtained by the same UHF wind profilers during the same Mistral events. In autumn, the motions are found to be globally and significantly subsident, which is coherent for a dry, cold and stable flow approaching the sea, and the turbulence is found to be of pure dynamical origin (wind shears and mountain/lee wave breaking), which is coherent with non-convective situations. In summer, due to the ground heating and to the interactions with

  9. Capacitance and surface of carbons in supercapacitors

    OpenAIRE

    Lobato Ortega, Belén; Suárez Fernández, Loreto; Guardia, Laura; Álvarez Centeno, Teresa

    2017-01-01

    This research is focused in the missing link between the specific surface area of carbons surface and their electrochemical capacitance. Current protocols used for the characterization of carbons applied in supercapacitors electrodes induce inconsistencies in the values of the interfacial capacitance (in F m−2), which is hindering the optimization of supercapacitors. The constraints of both the physisorption of N2 at 77 K and the standard methods used for the isotherm analysis frequently lead...

  10. Development of electrical capacitance sensor for tomography

    International Nuclear Information System (INIS)

    Rasif Mohd Zain; Jaafar Abdullah; Ismail Mustapha; Sazrol Azizee Ariff; Susan Maria Sipaun; Lojius Lombigit

    2004-01-01

    Electrical capacitance tomography (ECT) is one of the successful methods for imaging 2-phase liquid/gas mixture in oil pipelines and solids/gas mixture in fluidized bed and pneumatic conveying system for improvement of process plants. This paper presents the design development of an electrical capacitance sensor for use with an ECT system. This project is aimed at developing a demonstration ECT unit to be used in the oil pipe line. (Author)

  11. Automatic Power Factor Correction Using Capacitive Bank

    OpenAIRE

    Mr.Anant Kumar Tiwari,; Mrs. Durga Sharma

    2014-01-01

    The power factor correction of electrical loads is a problem common to all industrial companies. Earlier the power factor correction was done by adjusting the capacitive bank manually [1]. The automated power factor corrector (APFC) using capacitive load bank is helpful in providing the power factor correction. Proposed automated project involves measuring the power factor value from the load using microcontroller. The design of this auto-adjustable power factor correction is ...

  12. Narrow gap electronegative capacitive discharges

    Energy Technology Data Exchange (ETDEWEB)

    Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

    2013-10-15

    Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

  13. Doping profile measurement on textured silicon surface

    Science.gov (United States)

    Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

    2018-04-01

    In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

  14. The Capacitance and Temperature Effects of the SiC- and Si-Based MEMS Pressure Sensor

    International Nuclear Information System (INIS)

    Marsi, N; Majlis, B Y; Hamzah, A A; Mohd, F

    2013-01-01

    This project develops the pressure sensor for monitoring the extreme conditions inside the gas turbine engine. The capacitive-based instead of piezoresistive-based pressure sensor is employed to avoid temperature drift. The deflecting (top) plate and the fixed (bottom) plate generate the capacitance, which is proportional to the applied input pressure and temperature. Two thin film materials of four different sizes are employed for the top plate, namely cubic silicon carbide (3C-SiC) and silicon (Si). Their performances in term of the sensitivity and linearity of the capacitance versus pressure are simulated at the temperature of 27°C, 500°C, 700°C and 1000°C. The results show that both materials display linear characteristics for temperature up to 500°C, although SiC-based sensor shows higher sensitivity. However, when the temperatures are increased to 700°C and 1000°C, the Si- based pressure sensor starts to malfunction at 50 MPa. However, the SiC-based pressure sensor continues to demonstrate high sensitivity and linearity at such high temperature and pressure. This paper validates the need of employing silicon carbide instead of silicon for sensing of extreme environments.

  15. All-solid-state supercapacitors on silicon using graphene from silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

    2016-05-02

    Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

  16. All-solid-state supercapacitors on silicon using graphene from silicon carbide

    International Nuclear Information System (INIS)

    Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

    2016-01-01

    Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

  17. Enhancing the power output of the VA-955 UHF-TV klystron

    International Nuclear Information System (INIS)

    Bowen, O.N.; Lawson, J.Q.

    1977-01-01

    The Varian VA-955 UHF-TV klystron is rated at 50 kW CW, and four of these klystrons were used to provide 200 kW of RF power for lower hybrid heating experiments on the ATC machine at 800 MHz. These proven, production-type tubes were wanted to generate more power for larger type machines, such as the PDX. Varian was asked whether the tubes were capable of higher-power operation in pulsed applications. They replied that they had no experimental data but felt that the tubes were capable of greatly enhanced performance under pulsed conditions. By using cathode modulation instead of modulating anode control of the klystron, and thus limiting the time that high voltage is applied to the cathode, it was shown that the tube is capable of an output power of 200 kW for tens of milliseconds compared to its normal CW rating of 50 kW. A description is given of the experimental results, the required modifications to the klystron and output transmission circuit, the details of operation of the regulating modulator used to perform the experiment. Upgrade kits are now being fabricated to allow 200 kW operation of the two 50 kW units which were lent to General Atomic for Doublet II experiments

  18. A low cost integrated transceiver for mobile UHF passive RFID reader applications

    International Nuclear Information System (INIS)

    Wang Jingchao; Zhang Chun; Chi Baoyong; Wang Ziqiang; Li Fule; Wang Zhihua

    2009-01-01

    A low cost integrated transceiver for mobile UHF passive RFID reader applications is implemented in a 0.18-μm CMOS process. The transceiver contains an OOK modulator and a power amplifier in the transmitter chain, an IQ direct-down converter, variable-gain amplifiers, channel-select filters and a 10-bit ADC in the receiver chain. The measured output P 1DB power of the transmitter is 17.6 dBm and the measured receiver sensitivity is -70 dBm. The on-chip integer N synthesizer achieves a frequency resolution of 200 kHz with a phase noise of -104 dBc/Hz at 100 kHz frequency offset and -120.83 dBc/Hz at 1 MHz frequency offset. The transmitter, the receiver and the frequency synthesizer consume 201.34, 25.3 and 54 mW, respectively. The chip has a die area of 4 x 2.5 mm 2 including pads.

  19. A low cost integrated transceiver for mobile UHF passive RFID reader applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jingchao; Zhang Chun; Chi Baoyong; Wang Ziqiang; Li Fule; Wang Zhihua, E-mail: wangjc@gmail.co [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2009-09-15

    A low cost integrated transceiver for mobile UHF passive RFID reader applications is implemented in a 0.18-{mu}m CMOS process. The transceiver contains an OOK modulator and a power amplifier in the transmitter chain, an IQ direct-down converter, variable-gain amplifiers, channel-select filters and a 10-bit ADC in the receiver chain. The measured output P{sub 1DB} power of the transmitter is 17.6 dBm and the measured receiver sensitivity is -70 dBm. The on-chip integer N synthesizer achieves a frequency resolution of 200 kHz with a phase noise of -104 dBc/Hz at 100 kHz frequency offset and -120.83 dBc/Hz at 1 MHz frequency offset. The transmitter, the receiver and the frequency synthesizer consume 201.34, 25.3 and 54 mW, respectively. The chip has a die area of 4 x 2.5 mm{sup 2} including pads.

  20. Design and implementation of an ultra-low power passive UHF RFID tag

    International Nuclear Information System (INIS)

    Shen Jinpeng; Wang Xin'an; Liu Shan; Zong Hongqiang; Huang Jinfeng; Yang Xin; Feng Xiaoxing; Ge Binjie

    2012-01-01

    This paper presents a fully integrated passive UHF RFID tag chip complying with the ISO18000-6B protocol. The tag chip includes an RF/analog front-end, a baseband processor, and a 512-bit EEPROM memory. To improve power conversion efficiency, a Schottky barrier diode based rectifier is adopted. A novel voltage reference using the peaking current source is discussed in detail, which can meet the low-power, low-voltage requirement while retaining circuit simplicity. Most of the analog blocks are designed to work under sub-1 V to reduce power consumption, and several practical methods are used to further reduce the power consumption of the baseband processor. The whole tag chip is implemented in a TSMC 0.18 μm CMOS process with a die size of 800 × 800 μm 2 . Measurement results show that the total power consumption of the tag chip is only 7.4 μW with a sensitivity of −12 dBm. (semiconductor integrated circuits)

  1. Coplanar UHF RFID tag antenna with U-shaped inductively coupled feed for metallic applications.

    Directory of Open Access Journals (Sweden)

    Karrar Naji Salman

    Full Text Available In this paper, we present a novel compact, coplanar, tag antenna design for metallic objects. Electrically small antenna has designed for a UHF RFID (860-960 MHz based on a proximity-coupled feed through. Furthermore, two symmetrical Via-loaded coplanar grounds fed by a U-shaped inductively coupled feed through an embedded transmission line. This configuration results in an antenna with dimensions of 31 × 19.5 × 3.065 mm3 at 915 MHz, and the total gain for the antenna is 0.12 dBi. The Via-loaded coplanar and U-shaped inductively coupled feeds allow the antenna to provide flexible tuning in terms of antenna impedance. In addition, a figure of merit is applied for the proposed tag antenna, and the results are presented. The read range is measured to be 4.2 m, which is very close to simulated values. This antenna measurement shows very good agreement with simulations.

  2. Design and implementation of a high sensitivity fully integrated passive UHF RFID tag

    International Nuclear Information System (INIS)

    Li Shoucheng; Wang Xin'an; Lin Ke; Shen Jinpeng; Zhang Jinhai

    2014-01-01

    A fully integrated passive UHF RFID tag complying with the ISO18000-6B protocol is presented, which includes an analog front-end, a baseband processor, and an EEPROM memory. To extend the communication range, a high efficiency differential-drive CMOS rectifier is adopted. A novel high performance voltage limiter is used to provide a stable limiting voltage, with a 172 mV voltage variation against temperature variation and process dispersion. The dynamic band-enhancement technique is used in the regulator circuit to improve the regulating capacity. A rail-to-rail hysteresis comparator is adopted to demodulate the signal correctly in any condition. The whole transponder chip is implemented in a 0.18 μm CMOS process, with a die size of 900 × 800 μm 2 . Our measurement results show that the total power consumption of the tag chip is only 6.8 μW, with a sensitivity of −13.5 dBm (semiconductor integrated circuits)

  3. Near Field UHF RFID Antenna System Enabling the Tracking of Small Laboratory Animals

    Directory of Open Access Journals (Sweden)

    Luca Catarinucci

    2013-01-01

    Full Text Available Radio frequency identification (RFID technology is more and more adopted in a wide range of applicative scenarios. In many cases, such as the tracking of small-size living animals for behaviour analysis purposes, the straightforward use of commercial solutions does not ensure adequate performance. Consequently, both RFID hardware and the control software should be tailored for the particular application. In this work, a novel RFID-based approach enabling an effective localization and tracking of small-sized laboratory animals is proposed. It is mainly based on a UHF Near Field RFID multiantenna system, to be placed under the animals’ cage, and able to rigorously identify the NF RFID tags implanted in laboratory animals (e.g., mice. Once the requirements of the reader antenna have been individuated, the antenna system has been designed and realized. Moreover, an algorithm based on the measured Received Signal Strength Indication (RSSI aiming at removing potential ambiguities in data captured by the multiantenna system has been developed and integrated. The animal tracking system has been largely tested on phantom mice in order to verify its ability to precisely localize each subject and to reconstruct its path. The achieved and discussed results demonstrate the effectiveness of the proposed tracking system.

  4. A UHF RFID system with on-chip-antenna tag for short range communication

    International Nuclear Information System (INIS)

    Peng Qi; Zhang Chun; Zhao Xijin; Wang Zhihua

    2015-01-01

    A UHF RF identification system based on the 0.18 μm CMOS process has been developed for short range and harsh size requirement applications, which is composed of a fully integrated tag and a special reader. The whole tag chip with the antenna takes up an area of 0.36 mm 2 , which is smaller than other reported tags with an on-chip antenna (OCA) using the standard CMOS process. A self-defined protocol is proposed to reduce the power consumption, and minimize the size of the tag. The specialized SOC reader system consists of the RF transceiver, digital baseband, MCU and host interface. Its power consumption is about 500 mW. Measurement results show that the system's reading range is 2 mm with 20 dBm reader output power. With an inductive antenna printed on a paper substrate around the OCA tag, the reading range can be extended from several centimeters to meters, depending on the shape and size of the inductive antenna. (paper)

  5. First UHF Implementation of the Incremental Scheme for Open-Shell Systems.

    Science.gov (United States)

    Anacker, Tony; Tew, David P; Friedrich, Joachim

    2016-01-12

    The incremental scheme makes it possible to compute CCSD(T) correlation energies to high accuracy for large systems. We present the first extension of this fully automated black-box approach to open-shell systems using an Unrestricted Hartree-Fock (UHF) wave function, extending the efficient domain-specific basis set approach to handle open-shell references. We test our approach on a set of organic and metal organic structures and molecular clusters and demonstrate standard deviations from canonical CCSD(T) values of only 1.35 kJ/mol using a triple ζ basis set. We find that the incremental scheme is significantly more cost-effective than the canonical implementation even for relatively small systems and that the ease of parallelization makes it possible to perform high-level calculations on large systems in a few hours on inexpensive computers. We show that the approximations that make our approach widely applicable are significantly smaller than both the basis set incompleteness error and the intrinsic error of the CCSD(T) method, and we further demonstrate that incremental energies can be reliably used in extrapolation schemes to obtain near complete basis set limit CCSD(T) reaction energies for large systems.

  6. A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders

    International Nuclear Information System (INIS)

    Shen Jinpeng; Wang Xin'an; Liu Shan; Li Shoucheng; Ruan Zhengkun

    2013-01-01

    This paper presents a voltage regulator system for passive UHF RFID transponders, which contains a rectifier, a limiter, and a regulator. The rectifier achieves power by rectifying the incoming RF energy. Due to the huge variation of the rectified voltage, a limiter at the rectifier output is used to clamp the rectified voltage. In this paper, the design of a limiter circuit is discussed in detail, which can provide a stable limiting voltage with low sensitivity to temperature variation and process dispersion. The key aspect of the voltage regulator system is the dynamic bandwidth boosting in the regulator. By sensing the excess current that is bypassed in the limiter during periods of excess energy, the bias current as well as the bandwidth of the regulator are increased, the output supply voltage can recover quickly from line transients during the periods of no RF energy to a full blast of RF energy. This voltage regulator system is implemented in a 0.18 μm CMOS process. (semiconductor integrated circuits)

  7. Design of planar electron gun for UHF range, CW power inductive output tube

    International Nuclear Information System (INIS)

    Kaushik, Meenu; Joshi, L.M.

    2015-01-01

    Inductive Output Tube (lOT) is an amplifier which is now-a-days in demand for scientific applications. For every vacuum tube, electron gun is an important part and in fact considered as the heart of the tube. Hence, designing of this component is very crucial for efficient operation of the device throughout its lifetime. This paper is all about the electromagnetic (EM) design of planar electron gun of 40 kV, 3.5 A beam voltage and beam current respectively, for a 100 kW CW power lOT operating in UHF range. The design considerations and basic equations involved in its design are included in the paper. The gun structure has been optimized for getting the desired beam characteristics. The simulation results including the beam profile along with the beam current are shown using two commercial codes namely TRAK and MAGIC code. Planar shape of electron beam reduces space charge forces in the beam itself and consequently beam energy spread for a given current. The magnetic focusing of planar beam is easier comparative to spherical beam hence, this structure has been adopted for this particular device design. (author)

  8. In situ occupational and general public exposure to VHF/UHF transmission for air traffic communication.

    Science.gov (United States)

    Joseph, Wout; Goeminne, Francis; Verloock, Leen; Vermeeren, Günter; Martens, Luc

    2012-09-01

    Occupational and general public exposure due to very high frequency (VHF)/ultra high frequency (UHF) transmission centres for verbal communication for air traffic control is investigated in situ for the first time. These systems are used for communication with aircraft, resulting in different human exposure from that of classical broadcasting. Measurement methods are proposed for the exposure assessment, and a measurement campaign is executed in three transmission centres. By investigating the temporal behaviour of the VHF signals for 6 d, a realistic worst-case duty cycle of 29 % is determined. Periods of high exposures corresponding with high aircraft traffic are from 7 a.m. to 1 p.m. and in the evening. All measured electric-field values satisfy the International Commission on Non-ionizing Radiation Protection guidelines. Fields vary from 0.2 to 21.1 V m(-1) for occupational exposure and from 0.007 to 8.0 V m(-1) for general public exposure. The average fields equal 5.2 V m(-1) for workers, and 0.7 V m(-1) for general public.

  9. In situ occupational and general public exposure to VHF/UHF transmission for air traffic communication

    International Nuclear Information System (INIS)

    Joseph, W.; Goeminne, F.; Verloock, L.; Vermeeren, G.; Martens, L.

    2012-01-01

    Occupational and general public exposure due to very high frequency (VHF)/ultra high frequency (UHF) transmission centres for verbal communication for air traffic control is investigated in situ for the first time. These systems are used for communication with aircraft, resulting in different human exposure from that of classical broadcasting. Measurement methods are proposed for the exposure assessment, and a measurement campaign is executed in three transmission centres. By investigating the temporal behaviour of the VHF signals for 6 d, a realistic worst-case duty cycle of 29 % is determined. Periods of high exposures corresponding with high aircraft traffic are from 7 a.m. to 1 p.m. and in the evening. All measured electric field values satisfy the International Commission on Non-ionizing Radiation Protection guidelines. Fields vary from 0.2 to 21.1 V m -1 for occupational exposure and from 0.007 to 8.0 V m -1 for general public exposure. The average fields equal 5.2 V m -1 for workers, and 0.7 V m -1 for general public. (authors)

  10. Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides

    Science.gov (United States)

    Sharma, Rajat; Puckett, Matthew W.; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-06-01

    We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  11. A new tevchnique for production of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

    1984-01-01

    It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

  12. Carbon flow electrodes for continuous operation of capacitive deionization and capacitive mixing energy generation

    NARCIS (Netherlands)

    Porada, S.; Hamelers, H.V.M.; Bryjak, M.; Presser, V.; Biesheuvel, P.M.; Weingarth, D.

    2014-01-01

    Capacitive technologies, such as capacitive deionization and energy harvesting based on mixing energy (“capmix” and “CO2 energy”), are characterized by intermittent operation: phases of ion electrosorption from the water are followed by system regeneration. From a system application point of view,

  13. Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

    Science.gov (United States)

    Achour, Amine; Porto, Raul Lucio; Soussou, Mohamed-Akram; Islam, Mohammad; Boujtita, Mohammed; Aissa, Kaltouma Ait; Le Brizoual, Laurent; Djouadi, Abdou; Brousse, Thierry

    2015-12-01

    Electrochemical capacitors (EC) in the form of packed films can be integrated in various electronic devices as power source. A fabrication process of EC electrodes, which is compatible with micro-fabrication, should be addressed for practical applications. Here, we show that titanium nitride films with controlled porosity can be deposited on flat silicon substrates by reactive DC-sputtering for use as high performance micro-supercapacitor electrodes. A superior volumetric capacitance as high as 146.4 F cm-3, with an outstanding cycling stability over 20,000 cycles, was measured in mild neutral electrolyte of potassium sulfate. The specific capacitance of the films as well as their capacitance retentions were found to depend on thickness, porosity and surface chemistry of electrodes. The one step process used to fabricate these TiN electrodes and the wide use of this material in the field of semiconductor technology make it promising for miniaturized energy storage systems.

  14. Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FET

    International Nuclear Information System (INIS)

    Singh, Sangeeta; Kondekar, P. N.; Pal, Pawan

    2016-01-01

    We investigate the transient behavior of an n-type double gate negative capacitance junctionless tunnel field effect transistor (NC-JLTFET). The structure is realized by using the work-function engineering of metal electrodes over a heavily doped n + silicon channel and a ferroelectric gate stack to get negative capacitance behavior. The positive feedback in the electric dipoles of ferroelectric materials results in applied gate bias boosting. Various device transient parameters viz. transconductance, output resistance, output conductance, intrinsic gain, intrinsic gate delay, transconductance generation factor and unity gain frequency are analyzed using ac analysis of the device. To study the impact of the work-function variation of control and source gate on device performance, sensitivity analysis of the device has been carried out by varying these parameters. Simulation study reveals that it preserves inherent advantages of charge-plasma junctionless structure and exhibits improved transient behavior as well. (paper)

  15. Capacitive behavior of highly-oxidized graphite

    Science.gov (United States)

    Ciszewski, Mateusz; Mianowski, Andrzej

    2014-09-01

    Capacitive behavior of a highly-oxidized graphite is presented in this paper. The graphite oxide was synthesized using an oxidizing mixture of potassium chlorate and concentrated fuming nitric acid. As-oxidized graphite was quantitatively and qualitatively analyzed with respect to the oxygen content and the species of oxygen-containing groups. Electrochemical measurements were performed in a two-electrode symmetric cell using KOH electrolyte. It was shown that prolonged oxidation causes an increase in the oxygen content while the interlayer distance remains constant. Specific capacitance increased with oxygen content in the electrode as a result of pseudo-capacitive effects, from 0.47 to 0.54 F/g for a scan rate of 20 mV/s and 0.67 to 1.15 F/g for a scan rate of 5 mV/s. Better cyclability was observed for the electrode with a higher oxygen amount.

  16. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  17. Carbon nanofiber supercapacitors with large areal capacitances

    KAUST Repository

    McDonough, James R.

    2009-01-01

    We develop supercapacitor (SC) devices with large per-area capacitances by utilizing three-dimensional (3D) porous substrates. Carbon nanofibers (CNFs) functioning as active SC electrodes are grown on 3D nickel foam. The 3D porous substrates facilitate a mass loading of active electrodes and per-area capacitance as large as 60 mg/ cm2 and 1.2 F/ cm2, respectively. We optimize SC performance by developing an annealing-free CNF growth process that minimizes undesirable nickel carbide formation. Superior per-area capacitances described here suggest that 3D porous substrates are useful in various energy storage devices in which per-area performance is critical. © 2009 American Institute of Physics.

  18. Energy-Efficient Capacitance-to-Digital Converters for Smart Sensor Applications

    KAUST Repository

    Alhoshany, Abdulaziz

    2017-12-01

    One of the key requirements in the design of wireless sensor nodes and miniature biomedical devices is energy efficiency. For a sensor node, which is a sensor and readout circuit, to survive on limited energy sources such as a battery or harvested energy, its energy consumption should be minimized. Capacitive sensors are candidates for use in energy-constrained applications, as they do not consume static power and can be used in a wide range of applications to measure different physical, chemical or biological quantities. However, the energy consumption is dominated by the capacitive interface circuit, i.e. the capacitance-to-digital converter (CDC). Several energy-efficient CDC architectures are introduced in this dissertation to meet the demand for high resolution and energy efficiency in smart capacitive sensors. First, we propose an energy-efficient CDC based on a differential successive-approximation data converter. The proposed differential CDC employs an energy-efficient operational transconductance amplifier (OTA) based on an inverter. A wide capacitance range with fine absolute resolution is implemented in the proposed coarse-fine DAC architecture which saves 89% of silicon area. The proposed CDC achieves an energy efficiency figure-of-merit () of 45.8fJ/step, which is the best reported energy efficiency to date. Second, we propose an energy efficient CDC for high-precision capacitive resolution by using oversampling and noise shaping. The proposed CDC achieves 150 aF absolute resolution and an energy efficiency of 187fJ/conversion-step which outperforms state of the art high-precision differential CDCs. In the third and last part, we propose an in-vitro cancer diagnostic biosensor-CMOS platform for low-power, rapid detection, and low cost. The introduced platform is the first to demonstrate the ability to screen and quantify the spermidine/spermine N1 acetyltransferase (SSAT) enzyme which reveals the presence of early-stage cancer, on the surface of a

  19. Vertical velocity and turbulence aspects during Mistral events as observed by UHF wind profilers

    Directory of Open Access Journals (Sweden)

    J.-L. Caccia

    2004-11-01

    Full Text Available The general purpose of this paper is to experimentally study mesoscale dynamical aspects of the Mistral in the coastal area located at the exit of the Rhône-valley. The Mistral is a northerly low-level flow blowing in southern France along the Rhône-valley axis, located between the French Alps and the Massif Central, towards the Mediterranean Sea. The experimental data are obtained by UHF wind profilers deployed during two major field campaigns, MAP (Mesoscale Alpine Program in autumn 1999, and ESCOMPTE (Expérience sur Site pour COntraindre les Modèles de Pollution atmosphériques et de Transports d'Emission in summer 2001.

    Thanks to the use of the time evolution of the vertical profile of the horizontal wind vector, recent works have shown that the dynamics of the Mistral is highly dependent on the season because of the occurrence of specific synoptic patterns. In addition, during summer, thermal forcing leads to a combination of sea breeze with Mistral and weaker Mistral due to the enhanced friction while, during autumn, absence of convective turbulence leads to substantial acceleration as low-level jets are generated in the stably stratified planetary boundary layer. At the exit of the Rhône valley, the gap flow dynamics dominates, whereas at the lee of the Alps, the dynamics is driven by the relative contribution of "flow around" and "flow over" mechanisms, upstream of the Alps. This paper analyses vertical velocity and turbulence, i.e. turbulent dissipation rate, with data obtained by the same UHF wind profilers during the same Mistral events.

    In autumn, the motions are found to be globally and significantly subsident, which is coherent for a dry, cold and stable flow approaching the sea, and the turbulence is found to be of pure dynamical origin (wind shears and mountain/lee wave breaking, which is coherent with non-convective situations.

    Electrochemical capacitance performance of titanium nitride nanoarray

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

    2013-12-01

    Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

  1. A UHF RFID positioning system for use in warehouse navigation by employees with cognitive disability.

    Science.gov (United States)

    Gunther, Eric J M; Sliker, Levin J; Bodine, Cathy

    2017-11-01

    Unemployment among the almost 5 million working-age adults with cognitive disabilities in the USA is a costly problem in both tax dollars and quality of life. Job coaching is an effective tool to overcome this, but the cost of job coaching services sums with every new employee or change of employment roles. There is a need for a cost-effective, automated alternative to job coaching that incurs a one-time cost and can be reused for multiple employees or roles. An effective automated job coach must be aware of its location and the location of destinations within the job site. This project presents a design and prototype of a cart-mounted indoor positioning and navigation system with necessary original software using Ultra High Frequency Radio Frequency Identification (UHF RFID). The system presented in this project for use within a warehouse setting is one component of an automated job coach to assist in the job of order filler. The system demonstrated accuracy to within 0.3 m under the correct conditions with strong potential to serve as the basis for an effective indoor navigation system to assist warehouse workers with disabilities. Implications for rehabilitation An automated job coach could improve employability of and job retention for people with cognitive disabilities. An indoor navigation system using ultra high frequency radio frequency identification was proposed with an average positioning accuracy of 0.3 m. The proposed system, in combination with a non-linear context-aware prompting system, could be used as an automated job coach for warehouse order fillers with cognitive disabilities.

  2. UHF-RFID solutions for logistics units management in the food supply chain

    Directory of Open Access Journals (Sweden)

    Paolo Barge

    2013-09-01

    Full Text Available The availability of systems for automatic and simultaneous identification of several items belonging to a logistics unit during production, warehousing and delivering can improve supply chain management and speed traceability controls. Radio frequency identification (RFID is a powerful technique that potentially permits to reach this goal, but some aspects as, for instance, food product composition (e.g. moisture content, salt or sugar content and some peculiarities of the production environment (high moisture, high/low temperatures, metallic structures have prevented, so far, its application in food sector. In the food industry, composition and shape of items are much less regular than in other commodities sectors. In addition, a wide variety of packaging, composed by different materials, is employed. As material, size and shape of items to which the tag should be attached strongly influence the minimum power requested for tag functioning, performance improvements can be achieved only selecting suitable RF identifier for the specific combination of food product and packaging. When dealing with logistics units, the dynamic reading of a vast number of tags originates simultaneous broadcasting of signals (tag-to-tag collisions that could affect reading rates and the overall reliability of the identification procedure. This paper reports the results of an extensive analysis of the reading performance of UHF RFID systems for multiple dynamic electronic identification of food packed products in controlled conditions. Products were considered singularly or arranged on a logistics pallet. The effects on reading rate and reading zone of different factors, among which the type of product, the number and position of antennas, the field polarization, the reader RF power output, the interrogation protocol configuration as well as the transit speed, the number of tags and their interactions were analysed and compared.

  3. Capacitance level probe, Type FSK 88

    International Nuclear Information System (INIS)

    Vogt, W.

    2001-01-01

    The aim of the capacitive level probe, Type FSK 88, is to supervise the level within vessels continuously and to signalize alterations immediately. Since 1987 the level probe is installed in the pool for burn up fuel elements and in the reactor containment sump of BWRs, PWRs and WWERs. The capacitive level probe of type FSK 88 was qualified for Loss of Coolant Accidents and seismic events according to international rules. The measuring principle takes credit from the fact that the dielectric with different dielectric constants in a condensator changes the capacity of the condensator. (Authors)

  4. Detecting size and shape of bodies capacitatively

    International Nuclear Information System (INIS)

    Walton, H.

    1980-01-01

    The size and shape of a body is determined by rolling it between the plates of capacitors and measuring the capacitance changes. A capacitor comprising two parallel, spaced wires inclined to the rolling direction and above and below the rolling body scans sections of the body along its longitudinal axis, another determines the body's lengths and a third comprising two non-parallel wires determines the position of the body. The capacitance changes are compared with those produced by a body of known size and shape so that the size and shape of the body can be determined. (author)

  5. Scenarios and business models for mobile network operators utilizing the hybrid use concept of the UHF broadcasting spectrum

    Directory of Open Access Journals (Sweden)

    S. Yrjölä

    2016-09-01

    Full Text Available This paper explores and presents scenarios and business models for mobile network operators (MNOs in the novel hybrid use spectrum sharing concept of the Ultra High Frequency broadcasting spectrum (470-790 MHz used for Digital Terrestrial TV (DTT and Mobile Broadband (MBB. More flexible use of the band could lead to higher efficiency in delivering fast growing and converging MBB, media and TV content to meet changing consumer needs. On one hand, this could be beneficial for broadcasters (BC, e.g., by preserving the spectrum, by providing additional revenues, or by lowering cost of the spectrum and, on the other hand, for MNOs to gain faster access to new potentially lower cost, licensed, below 1GHz spectrum to cope with booming data traffic. As a collaborative benefit, the concept opens up new business opportunities for delivering TV and media content using MBB network with means to introduce this flexibly. This paper highlights the importance of developing sound business models for the new spectrum use concept, as they need to provide clear benefits to the key stakeholders to be adopted in real life. The paper applies a future and action oriented approach to the MBB using the concept to derive scenarios and business models for MNOs for accessing hybrid UHF bands. In order to address the convergence and transformation coming with the concept, business models are first developed for the current situation with separate exclusive spectrum bands. Novel business scenarios are then developed for the introduction of the new flexible hybrid UHF spectrum concept. The created business model indicates that the MNOs could benefit significantly from the new UHF bands, which would enable them to cope with increasing data traffic asymmetry, and to offer differentiation through personalized broadcasting and new media services. Moreover, it could significantly re-shape the business ecosystem around both the broadcasting and the mobile broadband by introducing

  6. Resonance of conductivity in UHF-range to the action of alternating current in La0.7Pb0.3MnO3 crystals

    International Nuclear Information System (INIS)

    Volkov, N.V.; Petrakovskij, G.A.; Sablina, K.A.

    1999-01-01

    The experimental results of the study on the effect of the low frequency transport current on the conductivity in UHF-range of the La 0.7 Pb 0.3 MnO 3 monocrystals are presented. In absence of the external magnetic field the UHF-conductivity response signal on the current impact has the form of the relaxation process. The peak of the amplitude resonance growth is observed in the external magnetic field in the response spectrum. The resonance response is of nonlinear character. The temperature and field dependences of the UHF-response basic parameters are in direct correlation with the magnetoresistance behaviour. The results obtained are analyzed within the frames of the oscillatory approximation. The mechanism of the phases electron separation is proposed as the possible mechanism of the current impact [ru

  7. Développement de résonateurs électromécaniques en technologie Silicon On Nothing, à détection capacitive et amplifiée par transistor MOS, en vue d'une co-intégration permettant d'adresser une application de référence de temps

    OpenAIRE

    Durand , Cédric

    2009-01-01

    Due to good performances, small size, or either integration possibilities very close to transistors, electromechanical resonators offer a strong potential for quartz replacement in time reference applications.In this context, we propose to develop electromechanical resonators in a perspective of a front-end integration, for the realization of integrated oscillators. The fabricated demonstrators are based on the Silicon On Nothing CMOS technology, under R&D at STMicroelectronics. Due to the sm...

  8. Study of the coastal atmospheric boundary layer during ESCOMPTE 2001. Evaluation and improvement of the efficiency of a UHF radar; Etude de la couche limite atmospherique cotiere durant ESCOMPTE 2001. Evaluation et amelioration des performances d'un radar UHF

    Energy Technology Data Exchange (ETDEWEB)

    Puygrenier, V

    2005-12-15

    Forecasting of pollution events was the main objective of the ESCOMPTE-2001 campaign, which took place in the Marseille/Fos/Berre heterogeneous area (southeastern France) in the early summer 2001. This goal requires good understanding and taking into account, by physico-chemical numerical models, of the physical processes in the Atmospheric Boundary Layer (ABL), in which pollutants are emitted, transported and diffused. In the ESCOMPTE-2001 campaign context, this work was devoted to study the low troposphere during sea breeze events, related to meteorological conditions responsible for poor air quality of coastal areas. It presents notably an oscillation of the sea breeze intensity and competitions of locals and regional sea breeze, which change the advective time of the marine air above the continental surface and thus influence the ABL development and its pollutants concentration. This study is based principally on the network of four UHF wind profilers radars set up on the coastal area of Marseille/Fos/Berre, allowing a continuous three-dimensional description of the sea breeze flow and the ABL. For the needs of this phenomenological work, methodological developments was realized to improve the measurement of ABL turbulent properties with UHF radars (terms of turbulent kinetic energy budget) and the use of wind profilers network for the study of pollutants plumes trajectory-graphy. (author)

  9. Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

    CERN Document Server

    Kemmer, J; Krause, N; Krieglmeyer, C; Yang Yi

    2000-01-01

    A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage (C/V) and current/voltage (I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

  10. Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk

    OpenAIRE

    Griffith, Christopher V.; Bongiorno, Stephen D.; Burrows, David N.; Falcone, Abraham D.; Prieskorn, Zachary R.

    2012-01-01

    We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36{\\mu}m pixel size, and the readout array has a pitch of 18{\\mu}m; but only one readout circuit line is bonded to each 36x36{\\mu}m absorber pixel. This unique bonding structure gives the readout an effective pitch of 36{\\mu}m. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS ...

  11. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

    2015-01-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  12. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca

    2015-09-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  13. Capacitors and Resistance-Capacitance Networks.

    Science.gov (United States)

    Balabanian, Norman; Root, Augustin A.

    This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

  14. Thermodynamic cycle analysis for capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.

    2009-01-01

    Capacitive deionization (CDI) is an ion removal technology based on temporarily storing ions in the polarization layers of two oppositely positioned electrodes. Here we present a thermodynamic model for the minimum work required for ion separation in the fully reversible case by describing the ionic

  15. Performance relations in Capacitive Deionization systems

    NARCIS (Netherlands)

    Limpt, van B.

    2010-01-01

    Capacitive Deionization (CDI) is a relatively new deionization technology based on the temporary storage of ions on an electrically charged surface. By directing a flow between two oppositely charged surfaces, negatively charged ions will adsorb onto the positively charged surface, and positively

  16. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.

    2015-01-01

    sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  17. Comparison of gate capacitance extraction methodologies

    NARCIS (Netherlands)

    Kazmi, S.N.R.; Schmitz, Jurriaan

    2008-01-01

    In recent years, many new capacitance-voltage measurement approaches have been presented in literature. New approaches became necessary with the rapidly increasing gate current density in newer CMOS generations. Here we present a simulation platform using Silvaco software, to describe the full chain

  18. Inside-out electrical capacitance tomography

    DEFF Research Database (Denmark)

    Kjærsgaard-Rasmussen, Jimmy; Meyer, Knud Erik

    2011-01-01

    In this work we demonstrate the construction of an ‘inside-out’ sensor geometry for electrical capacitance tomography (ECT). The inside-out geometry has the electrodes placed around a tube, as usual, but measuring ‘outwards’. The flow between the electrodes and an outer tube is reconstructed...

  19. Overview of capacitive couplings in windings

    NARCIS (Netherlands)

    Djukic, N.; Encica, L.; Paulides, J.J.H.

    2015-01-01

    The use of electrical machines (EMs) with variable-frequency drives (VFDs) results in electromagnetic interference (EMI). At high frequencies (HFs) of conducted EMI, the impedance of an EM insulation system fed from a VFD is small due to the parasitic capacitive couplings. Thus, the conducted EMI

  20. Capacitive system detects and locates fluid leaks

    Science.gov (United States)

    1966-01-01

    Electronic monitoring system automatically detects and locates minute leaks in seams of large fluid storage tanks and pipelines covered with thermal insulation. The system uses a capacitive tape-sensing element that is adhesively bonded over seams where fluid leaks are likely to occur.

  1. Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo; Klanner, Robert; Fretwurst, Eckhart [Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 (Germany)

    2010-07-01

    As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p{sup +} on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.

  2. Hydrogen Incorporation during Aluminium Anodisation on Silicon Wafer Surfaces

    International Nuclear Information System (INIS)

    Lu, Pei Hsuan Doris; Strutzberg, Hartmuth; Wenham, Stuart; Lennon, Alison

    2014-01-01

    Hydrogen can act to reduce recombination at silicon surfaces for solar cell devices and consequently the ability of dielectric layers to provide a source of hydrogen for this purpose is of interest. However, due to the ubiquitous nature of hydrogen and its mobility, direct measurements of hydrogen incorporation in dielectric layers are challenging. In this paper, we report the use of secondary ion mass spectrometry measurements to show that deuterium from an electrolyte can be incorporated in an anodic aluminium oxide (AAO) layer and be introduced into an underlying amorphous silicon layer during anodisation of aluminium on silicon wafers. After annealing at 400 °C, the concentration of deuterium in the AAO was reduced by a factor of two, as the deuterium was re-distributed to the interface between the amorphous silicon and AAO and to the amorphous silicon. The assumption that hydrogen, from an aqueous electrolyte, could be similarly incorporated in AAO, is supported by the observation that the hydrogen content in the underlying amorphous silicon was increased by a factor of ∼ 3 after anodisation. Evidence for hydrogen being introduced into crystalline silicon after aluminium anodisation was provided by electrochemical capacitance voltage measurements indicating boron electrical deactivation in the underlying crystalline silicon. If introduced hydrogen can electrically deactivate dopant atoms at the surface, then it is reasonable to assume that it could also deactivate recombination-active states at the crystalline silicon interface therefore enabling higher minority carrier lifetimes in the silicon wafer

  3. Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

    2009-01-01

    This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

  4. Nonlinear dynamics of capacitive charging and desalination by porous electrodes

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Bazant, M.Z.

    2010-01-01

    The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a

  5. Comparative Method for Indirect Sensitivity Measurement of UHF RFID Reader with Respect to Interoperability and Conformance Requirements

    Directory of Open Access Journals (Sweden)

    Lukas Kypus

    2014-01-01

    Full Text Available There is never-ending race for the competitive advantage that forces RFID technology service integrators to focus more on used technology qualitative aspects and theirs impacts inside RFID ecosystem. This paper contributes to UHF RFID reader qualitative parameters evaluation and assessment problematic. It presents and describes in details indirect method and procedure of sensitivity measurement created for UHF RFID readers. We applied this method on RFID readers within prepared test environment and confirmed long term intention and recognized trend. Due to regulations limitations, there is not possible to increase output power over defined limits, but there are possibilities to influence reader sensitivity. Our proposal is to use customized comparative measurement method with insertion loss compensation for return link. Beside the main goal achievement, results show as well the qualitative status of development snapshot of reader. Method and following experiment helped us to gain an external view, current values of important parameters and motivation we want to follow up on as well as compared developed reader with its commercial competitors.

  6. Textile-Based, Interdigital, Capacitive, Soft-Strain Sensor for Wearable Applications

    Directory of Open Access Journals (Sweden)

    Ozgur Atalay

    2018-05-01

    Full Text Available The electronic textile area has gained considerable attention due to its implementation of wearable devices, and soft sensors are the main components of these systems. In this paper, a new sensor design is presented to create stretchable, capacitance-based strain sensors for human motion tracking. This involves the use of stretchable, conductive-knit fabric within the silicone elastomer matrix, as interdigitated electrodes. While conductive fabric creates a secure conductive network for electrodes, a silicone-based matrix provides encapsulation and dimensional-stability to the structure. During the benchtop characterization, sensors show linear output, i.e., R2 = 0.997, with high response time, i.e., 50 ms, and high resolution, i.e., 1.36%. Finally, movement of the knee joint during the different scenarios was successfully recorded.

  7. Quantum capacitance of the armchair-edge graphene nanoribbon

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 81; Issue 2. Quantum capacitance of the ... Abstract. The quantum capacitance, an important parameter in the design of nanoscale devices, is derived for armchair-edge single-layer graphene nanoribbon with semiconducting property. The quantum capacitance ...

  8. Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

    Science.gov (United States)

    Scardelletti, Maximilian C.; Zorman, Christian A.

    2016-01-01

    This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

  9. Development of a Novel Transparent Flexible Capacitive Micromachined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    Da-Chen Pang

    2017-06-01

    Full Text Available This paper presents the world’s first transparent flexible capacitive micromachined ultrasonic transducer (CMUT that was fabricated through a roll-lamination technique. This polymer-based CMUT has advantages of transparency, flexibility, and non-contacting detection which provide unique functions in display panel applications. Comprising an indium tin oxide-polyethylene terephthalate (ITO-PET substrate, SU-8 sidewall and vibrating membranes, and silver nanowire transparent electrode, the transducer has visible-light transmittance exceeding 80% and can operate on curved surfaces with a 40 mm radius of curvature. Unlike the traditional silicon-based high temperature process, the CMUT can be fabricated on a flexible substrate at a temperature below 100 °C to reduce residual stress introduced at high temperature. The CMUT on the curved surfaces can detect a flat target and finger at distances up to 50 mm and 40 mm, respectively. The transparent flexible CMUT provides a better human-machine interface than existing touch panels because it can be integrated with a display panel for non-contacting control in a health conscious environment and the flexible feature is critical for curved display and wearable electronics.

  10. Resonant gravimetric immunosensing based on capacitive micromachined ultrasound transducers

    KAUST Repository

    Viržonis, Darius

    2014-04-08

    High-frequency (40 MHz) and low-frequency (7 MHz) capacitive micromachined ultrasound transducers (CMUT) were fabricated and tested for use in gravimetric detection of biomolecules. The low-frequency CMUT sensors have a gold-coated surface, while the high-frequency sensors have a silicon nitride surface. Both surfaces were functionalized with bovine leukemia virus antigen gp51 acting as the antigen. On addition of an a specific antibody labeled with horseradish peroxidase (HRP), the antigen/antibody complex is formed on the surface and quantified by HRP-catalyzed oxidation of tetramethylbenzidine. It has been found that a considerably smaller quantity of immuno complex is formed on the high frequency sensor surface. In parallel, the loading of the surface of the CMUT was determined via resonance frequency and electromechanical resistance readings. Following the formation of the immuno complexes, the resonance frequencies of the low-frequency and high-frequency sensors decrease by up to 420 and 440 kHz, respectively. Finite element analysis reveals that the loading of the (gold-coated) low frequency sensors is several times larger than that on high frequency sensors. The formation of the protein film with pronounced elasticity and stress on the gold surface case is discussed. We also discuss the adoption of this method for the detection of DNA using a hybridization assay following polymerase chain reaction.

  11. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  12. Compressed magnetic flux amplifier with capacitive load

    International Nuclear Information System (INIS)

    Stuetzer, O.M.

    1980-03-01

    A first-order analysis is presented for a compressed magnetic flux (CMF) current amplifier working into a load with a capacitive component. Since the purpose of the investigation was to gain a general understanding of the arrangement, a number of approximations and limitations were accepted. The inductance of the transducer varies with time; the inductance/resistance/capacitance (LRC) circuit therefore is parametric and solutions are different for the stable regime (high C), the oscillation regime (low C), and the transition case. Solutions and performance depend strongly on circuit boundary conditions, i.e., energization of the circuit by either an injected current or by an applied capacitor charge. The behavior of current and energy amplification for the various cases are discussed in detail. A number of experiments with small CMF devices showed that the first-order theory presented predicts transducer performance well in the linear regime

  13. Locating Depots for Capacitated Vehicle Routing

    DEFF Research Database (Denmark)

    Gørtz, Inge Li; Nagarajan, Viswanath

    2016-01-01

    We study a location-routing problem in the context of capacitated vehicle routing. The input to the k-location capacitated vehicle routing problem (k-LocVRP) consists of a set of demand locations in a metric space and a fleet of k identical vehicles, each of capacity Q. The objective is to locate k...... depots, one for each vehicle, and compute routes for the vehicles so that all demands are satisfied and the total cost is minimized. Our main result is a constant-factor approximation algorithm for k-LocVRP. In obtaining this result, we introduce a common generalization of the k-median and minimum...... spanning tree problems (called k median forest), which might be of independent interest. We give a local-search based (3+ε)-approximation algorithm for k median forest, which leads to a (12+ε)-approximation algorithm for k-LocVRP, for any constant ε>0....

  14. Locating Depots for Capacitated Vehicle Routing

    DEFF Research Database (Denmark)

    Gørtz, Inge Li; Nagarajan, Viswanath

    2016-01-01

    depots, one for each vehicle, and compute routes for the vehicles so that all demands are satisfied and the total cost is minimized. Our main result is a constant-factor approximation algorithm for k-LocVRP. In obtaining this result, we introduce a common generalization of the k-median and minimum...... spanning tree problems (called k median forest), which might be of independent interest. We give a local-search based (3+ε)-approximation algorithm for k median forest, which leads to a (12+ε)-approximation algorithm for k-LocVRP, for any constant ε>0.......We study a location-routing problem in the context of capacitated vehicle routing. The input to the k-location capacitated vehicle routing problem (k-LocVRP) consists of a set of demand locations in a metric space and a fleet of k identical vehicles, each of capacity Q. The objective is to locate k...

  15. Development of a contactless capacitive immunosensor

    OpenAIRE

    Perruche, Brice Emmanuel

    2011-01-01

    In the present work, a label-free, contactless and capacitive immunosensor is developed using impedance spectroscopy, in the aim to perform low-cost immunoassays. Chapter 1 puts this work in perspective with some existing techniques, while a presentation of impedance theory used in this work is carried out in chapter 2. In Chapter 3, numerical simulations using a commercial finite element method software is carried out. The response of coplanar and fa...

  16. Adding Resistances and Capacitances in Introductory Electricity

    Science.gov (United States)

    Efthimiou, C. J.; Llewellyn, R. A.

    2005-09-01

    All introductory physics textbooks, with or without calculus, cover the addition of both resistances and capacitances in series and in parallel as discrete summations. However, none includes problems that involve continuous versions of resistors in parallel or capacitors in series. This paper introduces a method for solving the continuous problems that is logical, straightforward, and within the mathematical preparation of students at the introductory level.

  17. Irradiation tests on bipolar front-end preamplifier using the Harris UHF1 technology

    Energy Technology Data Exchange (ETDEWEB)

    Goyot, M

    1997-09-01

    A low noise, low power, radiation hard, full custom integrated circuit has been studied for coupling with photodetectors of the CMS electromagnetic calorimeter. A new version of the prototype preamplifier has been designed with improved performances (noise, dynamic range, consumption). Irradiation tests on this monolithic circuit have been performed at CERN with a X ray SEIFERT RP149 generator up to 10 Mrad equivalent silicon oxide. Tests results are presented. (author) 5 refs.

  18. Carbon Nanofiber versus Graphene-Based Stretchable Capacitive Touch Sensors for Artificial Electronic Skin.

    Science.gov (United States)

    Cataldi, Pietro; Dussoni, Simeone; Ceseracciu, Luca; Maggiali, Marco; Natale, Lorenzo; Metta, Giorgio; Athanassiou, Athanassia; Bayer, Ilker S

    2018-02-01

    Stretchable capacitive devices are instrumental for new-generation multifunctional haptic technologies particularly suited for soft robotics and electronic skin applications. A majority of elongating soft electronics still rely on silicone for building devices or sensors by multiple-step replication. In this study, fabrication of a reliable elongating parallel-plate capacitive touch sensor, using nitrile rubber gloves as templates, is demonstrated. Spray coating both sides of a rubber piece cut out of a glove with a conductive polymer suspension carrying dispersed carbon nanofibers (CnFs) or graphene nanoplatelets (GnPs) is sufficient for making electrodes with low sheet resistance values (≈10 Ω sq -1 ). The electrodes based on CnFs maintain their conductivity up to 100% elongation whereas the GnPs-based ones form cracks before 60% elongation. However, both electrodes are reliable under elongation levels associated with human joints motility (≈20%). Strikingly, structural damages due to repeated elongation/recovery cycles could be healed through annealing. Haptic sensing characteristics of a stretchable capacitive device by wrapping it around the fingertip of a robotic hand (ICub) are demonstrated. Tactile forces as low as 0.03 N and as high as 5 N can be easily sensed by the device under elongation or over curvilinear surfaces.

  19. Experimental study of a variable-capacitance micromotor with electrostatic suspension

    Science.gov (United States)

    Han, F. T.; Wu, Q. P.; Wang, L.

    2010-11-01

    A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10-13 pF and torque values in the order of 10-10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min-1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model.

  20. Experimental study of a variable-capacitance micromotor with electrostatic suspension

    International Nuclear Information System (INIS)

    Han, F T; Wu, Q P; Wang, L

    2010-01-01

    A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10 −13 pF and torque values in the order of 10 −10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min −1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model

  1. Multi-Channel Capacitive Sensor Arrays

    Directory of Open Access Journals (Sweden)

    Bingnan Wang

    2016-01-01

    Full Text Available In this paper, multi-channel capacitive sensor arrays based on microstrip band-stop filters are studied. The sensor arrays can be used to detect the proximity of objects at different positions and directions. Each capacitive sensing structure in the array is connected to an inductive element to form resonance at different frequencies. The resonances are designed to be isolated in the frequency spectrum, such that the change in one channel does not affect resonances at other channels. The inductive element associated with each capacitive sensor can be surface-mounted inductors, integrated microstrip inductors or metamaterial-inspired structures. We show that by using metamaterial split-ring structures coupled to a microstrip line, the quality factor of each resonance can be greatly improved compared to conventional surface-mounted or microstrip meander inductors. With such a microstrip-coupled split-ring design, more sensing elements can be integrated in the same frequency spectrum, and the sensitivity can be greatly improved.

  2. Micromachined capacitive ultrasonic immersion transducer array

    Science.gov (United States)

    Jin, Xuecheng

    Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.

  3. Calculation of secondary capacitance of compact Tesla pulse transformer

    International Nuclear Information System (INIS)

    Yu Binxiong; Liu Jinliang

    2013-01-01

    An analytic expression of the secondary capacitance of a compact Tesla pulse transformer is derived. Calculated result by the expression shows that two parts contribute to the secondary capacitance, namely the capacitance between inner and outer magnetic cores and the attached capacitance caused by the secondary winding. The attached capacitance equals to the capacitance of a coaxial line which is as long as the secondary coil, and whose outer and inner diameters are as large as the inner diameter of the outer magnetic and the outer diameter of the inner magnetic core respectively. A circuital model for analyzing compact Tesla transformer is built, and numeric calculation shows that the expression of the secondary capacitance is correct. Besides, a small compact Tesla transformer is developed, and related test is carried out. Test result confirms the calculated results by the expression derived. (authors)

  4. Touch-mode capacitive pressure sensor with graphene-polymer heterostructure membrane

    Science.gov (United States)

    Berger, Christian; Phillips, Rory; Pasternak, Iwona; Sobieski, Jan; Strupinski, Wlodek; Vijayaraghavan, Aravind

    2018-01-01

    We describe the fabrication and characterisation of a touch-mode capacitive pressure sensor (TMCPS) with a robust design that comprises a graphene-polymer heterostructure film, laminated onto the silicon dioxide surface of a silicon wafer, incorporating a SU-8 spacer grid structure. The spacer grid structure allows the flexible graphene-polymer film to be partially suspended above the substrate, such that a pressure on the membrane results in a reproducible deflection, even after exposing the membrane to pressures over 10 times the operating range. Sensors show reproducible pressure transduction in water submersion at varying depths under static and dynamic loading. The measured capacitance change in response to pressure is in good agreement with an analytical model of clamped plates in touch mode. The device shows a pressure sensitivity of 27.1 +/- 0.5 fF Pa-1 over a pressure range of 0.5 kPa-8.5 kPa. In addition, we demonstrate the operation of this device as a force-touch sensor in air.

  5. Consolidated Ground Segment Requirements for a UHF Radar for the ESSAS

    Science.gov (United States)

    Muller, Florent; Vera, Juan

    2009-03-01

    ESA has launched a nine months long study to define the requirements associated to the ground segment of a UHF (300-3000 MHz) radar system. The study has been awarded in open competition to a consortium led by Onera, associated to the Spanish companies Indra and its sub-contractor Deimos. After a phase of consolidation of the requirements, different monostatic and bistatic concepts of radars will be proposed and evaluated. Two concepts will be selected for further design studies. ESA will then select the best one, for detailed design as well as cost and performance evaluation. The aim of this paper is to present the results of the first phase of the study concerning the consolidation of the radar system requirements. The main mission for the system is to be able to build and maintain a catalogue of the objects in low Earth orbit (apogee lower than 2000km) in an autonomous way, for different sizes of objects, depending on the future successive development phases of the project. The final step must give the capability of detecting and tracking 10cm objects, with a possible upgrade to 5 cm objects. A demonstration phase must be defined for 1 m objects. These different steps will be considered during all the phases of the study. Taking this mission and the different steps of the study as a starting point, the first phase will define a set of requirements for the radar system. It was finished at the end of January 2009. First part will describe the constraints derived from the targets and their environment. Orbiting objects have a given distribution in space, and their observability and detectability are based on it. It is also related to the location of the radar system But they are also dependant on the natural propagation phenomenon, especially ionospheric issues, and the characteristics of the objects. Second part will focus on the mission itself. To carry out the mission, objects must be detected and tracked regularly to refresh the associated orbital parameters

  6. Design and Optimization of Passive UHF RFID Tag Antenna for Mounting on or inside Material Layers

    Science.gov (United States)

    Shao, Shuai

    There is great desire to employ passive UHF RFID tags for inventory tracking and sensing in a diversity of applications and environments. Owing to its battery-free operation, non-line-of sight detection, low cost, long read range and small form factor, each year billions of RFID tags are being deployed in retail, logistics, manufacturing, biomedical inventories, among many other applications. However, the performance of these RFID systems has not met expectations. This is because a tag's performance deteriorates significantly when mounted on or inside arbitrary materials. The tag antenna is optimized only for a given type of material at a certain location of placement, and detuning takes place when attached to or embedded in materials with dielectric properties outside the design range. Thereby, different customized tags may be needed for identifying objects even within the same class of products. This increases the overall cost of the system. Furthermore, conventional copper foil-based RFID tag antennas are prone to metal fatigue and wear, and cannot survive hostile environments where antennas could be deformed by external forces and failures occur. Therefore, it is essential to understand the interaction between the antenna and the material in the vicinity of the tag, and design general purpose RFID tag antennas possessing excellent electrical performance as well as robust mechanical structure. A particularly challenging application addressed here is designing passive RFID tag antennas for automotive tires. Tires are composed of multiple layers of rubber with different dielectric properties and thicknesses. Furthermore, metallic plies are embedded in the sidewalls and steel belts lie beneath the tread to enforce mechanical integrity. To complicate matters even more, a typical tire experiences a 10% stretching during the construction process. This dissertation focuses on intuitively understanding the interaction between the antenna and the material in the

  7. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  8. Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors.

    Science.gov (United States)

    Zhang, Yao; Ma, Rui; Zhen, Xue V; Kudva, Yogish C; Bühlmann, Philippe; Koester, Steven J

    2017-11-08

    A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

  9. A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    International Nuclear Information System (INIS)

    Liu Zhongqi; Zhang Chun; Li Yongming; Wang Zhihua

    2010-01-01

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 0 C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA. (semiconductor integrated circuits)

  10. A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    Energy Technology Data Exchange (ETDEWEB)

    Liu Zhongqi [Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China); Zhang Chun; Li Yongming; Wang Zhihua, E-mail: liu-zq04@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2010-06-15

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 {sup 0}C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 {mu}m mixed-mode CMOS technology, and the current consumption is only 1 {mu}A. (semiconductor integrated circuits)

  11. Wearable Passive E-Textile UHF RFID Tag Based on a Slotted Patch Antenna with Sewn Ground and Microchip Interconnections

    Directory of Open Access Journals (Sweden)

    Johanna Virkki

    2017-01-01

    Full Text Available We present a wearable passive UHF RFID tag based on a slotted patch antenna comprising only textile materials (e-textile, textile substrate, and conductive yearn. As a novel manufacturing approach, we realize the patch-to-ground and antenna-to-IC interfaces using only conductive thread and a sewing machine. We outline the electromagnetic optimization of the antenna for body-worn operation through simulations and present a performance comparison between the e-textile tag and a tag produced using regular electronics materials and methods. The measured results show that the textile tag achieves the electrical performance required in practical applications and that the slotted patch type antenna provides stable electromagnetic performance in different body-worn configurations.

  12. CPW-fed Circularly Polarized Slot Antenna with Small Gap and Stick-shaped Shorted Strip for UHF FRID Readers

    Science.gov (United States)

    Pan, Chien-Yuan; Su, Chum-Chieh; Yang, Wei-Lin

    2018-04-01

    A new circularly polarized (CP) slot antenna with a small gap and a stick-shaped shorted strip is presented. The proposed antenna has a sufficient bandwidth for ultrahigh frequency (UHF) radio-frequency identification (RFID) reader applications. The antenna structure consists of a rectangular slot with a small gap, a stick-shaped shorted strip and a 50 Ω coplanar waveguide (CPW) feedline with an asymmetrical ground plane. By using the stick -shaped shorted strip to disturb magnetic current distribution on the slot, the CP radiation can be generated. The measured results demonstrate that the proposed antenna can reach a 10 dB return loss impedance bandwidth of 14.1 % (894-1030 MHz) and a 3 dB axial ratio (AR) bandwidth of 6.4 % (910-970 MHz). The whole antenna size is 80 × 80 × 1.6 mm3.

  13. On the Feasibility of Gap Detection of Power Transformer Partial Discharge UHF Signals: Gap Propagation Characteristics of Electromagnetic Waves

    Directory of Open Access Journals (Sweden)

    Xiaoxing Zhang

    2017-10-01

    Full Text Available This study analyzed the transformer electromagnetic gap propagation characteristics. The influence of gap size is also analyzed, and the results experimentally verified. The obtained results indicated that the gap propagation characteristics of electromagnetic wave signals radiated by the partial discharge (PD source in different directions are substantially different. The intensity of the electromagnetic wave in the gap reaches a maximum at a gap height of 1 cm; and inside the gap, the intensity of the electromagnetic wave depicted an increasing trend at the tail area of the gap. Finally, from the obtained results, some suggestions on where to install sensors in practical systems for ultra high frequency (UHF PD signal detection in the transformer gap are provided. The obtained results confirmed the feasibility of using this approach. These results can be seen as a benchmark and a challenge for further research in this field.

  14. Development of 3D carbon nanotube interdigitated finger electrodes on polymer substrate for flexible capacitive sensor application

    International Nuclear Information System (INIS)

    Hu, Chih-Fan; Wang, Jhih-Yu; Fang, Weileun; Liu, Yu-Chia; Tsai, Ming-Han

    2013-01-01

    This study reports a novel approach to the implementation of 3D carbon nanotube (CNT) interdigitated finger electrodes on flexible polymer, and the detection of strain, bending curvature, tactile force and proximity distance are demonstrated. The merits of the presented CNT-based flexible sensor are as follows: (1) the silicon substrate is patterned to enable the formation of 3D vertically aligned CNTs on the substrate surface; (2) polymer molding on the silicon substrate with 3D CNTs is further employed to transfer the 3D CNTs to the flexible polymer substrate; (3) the CNT–polymer composite (∼70 μm in height) is employed to form interdigitated finger electrodes to increase the sensing area and initial capacitance; (4) other structures such as electrical routings, resistors and mechanical supporters are also available using the CNT–polymer composite. The preliminary fabrication results demonstrate a flexible capacitive sensor with 50 μm high CNT interdigitated electrodes on a poly-dimethylsiloxane substrate. The tests show that the typical capacitance change is several dozens of fF and the gauge factor is in the range of 3.44–4.88 for strain and bending curvature measurement; the sensitivity of the tactile sensor is 1.11% N −1 ; a proximity distance near 2 mm away from the sensor can be detected. (paper)

  15. A current driven capacitively coupled chlorine discharge

    International Nuclear Information System (INIS)

    Huang, Shuo; Gudmundsson, J T

    2014-01-01

    The effect of driving current, driving frequency and secondary electrons on capacitively coupled chlorine discharge is systematically investigated using a hybrid approach consisting of a particle-in-cell/Monte Carlo simulation and a volume-averaged global model. The driving current is varied from 20 to 80 A m −2 , the driving frequency is varied from 13.56 to 60 MHz and the secondary electron emission coefficient is varied from 0.0 to 0.4. Key plasma parameters including electron energy probability function, electron heating rate, ion energy and angular distributions are explored and their variations with control parameters are analyzed and compared with other discharges. Furthermore, we extend our study to dual-frequency (DF) capacitively coupled chlorine discharge by adding a low-frequency current source and explore the effect of the low-frequency source on the discharge. The low-frequency current density is increased from 0 to 4 A m −2 . The flux of Cl 2 + ions to the surface increases only slightly while the average energy of Cl 2 + ions to the surface increases almost linearly with increasing low-frequency current, which shows possible independent control of the flux and energy of Cl 2 + ions by varying the low-frequency current in a DF capacitively coupled chlorine discharge. However, the increase in the flux of Cl + ions with increasing low-frequency current, which is mainly due to the increased dissociation fraction of the background gas caused by extra power supplied by the low-frequency source, is undesirable. (paper)

  16. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  17. Study the Z-Plane Strip Capacitance

    International Nuclear Information System (INIS)

    Parikh, H.; Swain, S.

    2005-01-01

    The BaBaR detector at the Stanford Linear Accelerator Center is currently undergoing an upgrade to improve its muon and neutral hadron detection system. The Resistive Plate Chambers (RPCs) that had been used till now have deteriorated in performance over the past few years and are being replaced by Limited Streamer Tube (LSTs). Each layer of the system consists of a set of up to 10 streamer tube modules which provide one coordinate (φ coordinate) and a single ''Z-plane'' which provides the Z coordinate of the hit. The large area Z-planes (up to 12m 2 ) are 1mm thick and contain 96 copper strips that detect the induced charge from avalanches created in the streamer tube wires. All the Z-planes needed for the upgrade have already been constructed, but only a third of the planes were installed last summer. After installing the 24 Z-planes last year, it was learned that 0.7% of the strips were dead when put inside the detector. This was mainly due to the delicate solder joint between the read-out cable and the strip, and since it is difficult to access or replace the Z-planes inside the detector, it is very important to perform various tests to make sure that the Z-planes will be efficient and effective in the long term. We measure the capacitance between the copper strips and the ground plane, and compare it to the theoretical value that we expect. Instead of measuring the capacitance channel by channel, which would be a very tedious job, we developed a more effective method of measuring the capacitance. Since all the Z-planes were built at SLAC, we also built a smaller 46 cm by 30 cm Z-plane with 12 strips just to see how they were constructed and to gain a better understanding about the solder joints

  18. Suppression of irradiation effects in gold-doped silicon detectors

    International Nuclear Information System (INIS)

    McPherson, M.; Sloan, T.; Jones, B.K.

    1997-01-01

    Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

  19. Understanding the Capacitance of PEDOT:PSS

    DEFF Research Database (Denmark)

    Volkov, Anton V.; Wijeratne, Kosala; Mitraka, Evangelia

    2017-01-01

    Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is the most studied and explored mixed ion-electron conducting polymer system. PEDOT:PSS is commonly included as an electroactive conductor in various organic devices, e.g., supercapacitors, displays, transistors, and energy......-converters. In spite of its long-term use as a material for storage and transport of charges, the fundamentals of its bulk capacitance remain poorly understood. Generally, charge storage in supercapacitors is due to formation of electrical double layers or redox reactions, and it is widely accepted that PEDOT...

  20. Spectral response analysis of PVDF capacitive sensors

    Science.gov (United States)

    Reyes-Ramírez, B.; García-Segundo, C.; García-Valenzuela, A.

    2013-06-01

    We investigate the spectral response to ultrasound waves in water of low-noise capacitive sensors based on PVDF polymer piezoelectric films. First, we analyze theoretically the mechanical-to-electrical transduction as a function of the frequency of ultrasonic signals and derive an analytic expression of the sensor's transfer function. Then we present experimental results of the frequency response of a home-made PDVF in water to test signals from 1 to 20 MHz induced by a commercial hydrophone powered by a signal generator and compare with our theoretical model.

  1. Capacitive tool standoff sensor for dismantlement tasks

    International Nuclear Information System (INIS)

    Schmitt, D.J.; Weber, T.M.; Liu, J.C.

    1996-01-01

    A capacitive sensing technology has been applied to develop a Standoff Sensor System for control of robotically deployed tools utilized in Decontamination and Dismantlement (D and D) activities. The system combines four individual sensor elements to provide non-contact, multiple degree-of-freedom control of tools at distances up to five inches from a surface. The Standoff Sensor has been successfully integrated to a metal cutting router and a pyrometer, and utilized for real-time control of each of these tools. Experiments demonstrate that the system can locate stationary surfaces with a repeatability of 0.034 millimeters

  2. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  3. New results on silicon microstrip detectors of CMS tracker

    International Nuclear Information System (INIS)

    Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

    2000-01-01

    Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

  4. Study on effective MOSFET channel length extracted from gate capacitance

    Science.gov (United States)

    Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

    2018-01-01

    The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

  5. Dispersion capacitive de l'interface H2SO4/Pt Capacitive dispersion ...

    African Journals Online (AJOL)

    Administrateur

    Département de Physique, Faculté des Sciences Exactes. Université des .... d'un comportement idéal de la capacité. Au vu .... Figure 2 : Photographie de la cellule Pt/0,5 MH2SO4 (fabriquée par Verre-Lab Constantine) plongée dans un bain.

  6. Accurate sizing of supercapacitors storage system considering its capacitance variation.

    OpenAIRE

    Trieste , Sony; Bourguet , Salvy; Olivier , Jean-Christophe; Loron , Luc; Le Claire , Jean-Claude

    2011-01-01

    International audience; This paper highlights the energy errors made for the design of supercapacitors used as a main energy source. First of all, the paper presents the two definitions of capacitance of a capacitance-voltage dependent material. The number of supercapacitors is important for the application purchasing cost. That is why the paper introduces an analytical model and an electrical model along with an identification method for the capacitance variation. This variation is presented...

  7. Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

    Directory of Open Access Journals (Sweden)

    M. Khaledian

    2014-01-01

    schematic perfect scroll-like Archimedes spiral. The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

  8. Programmable differential capacitance-to-voltage converter for MEMS accelerometers

    Science.gov (United States)

    Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

    2017-05-01

    Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

  9. MEMS capacitive accelerometer-based middle ear microphone.

    Science.gov (United States)

    Young, Darrin J; Zurcher, Mark A; Semaan, Maroun; Megerian, Cliff A; Ko, Wen H

    2012-12-01

    The design, implementation, and characterization of a microelectromechanical systems (MEMS) capacitive accelerometer-based middle ear microphone are presented in this paper. The microphone is intended for middle ear hearing aids as well as future fully implantable cochlear prosthesis. Human temporal bones acoustic response characterization results are used to derive the accelerometer design requirements. The prototype accelerometer is fabricated in a commercial silicon-on-insulator (SOI) MEMS process. The sensor occupies a sensing area of 1 mm × 1 mm with a chip area of 2 mm × 2.4 mm and is interfaced with a custom-designed low-noise electronic IC chip over a flexible substrate. The packaged sensor unit occupies an area of 2.5 mm × 6.2 mm with a weight of 25 mg. The sensor unit attached to umbo can detect a sound pressure level (SPL) of 60 dB at 500 Hz, 35 dB at 2 kHz, and 57 dB at 8 kHz. An improved sound detection limit of 34-dB SPL at 150 Hz and 24-dB SPL at 500 Hz can be expected by employing start-of-the-art MEMS fabrication technology, which results in an articulation index of approximately 0.76. Further micro/nanofabrication technology advancement is needed to enhance the microphone sensitivity for improved understanding of normal conversational speech.

  10. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  11. A new detector concept for silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, F.; Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Ariffin, A.; Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan)

    2016-07-11

    A new design and principle of operation of silicon photomultipliers are presented. The new design comprises a semiconductor substrate and an array of independent micro-phototransistors formed on the substrate. Each micro-phototransistor comprises a photosensitive base operating in Geiger mode and an individual micro-emitter covering a small part of the base layer, thereby creating, together with this latter, a micro-transistor. Both micro-emitters and photosensitive base layers are connected with two respective independent metal grids via their individual micro-resistors. The total value of signal gain in the proposed silicon photomultiplier is a result of both the avalanche gain in the base layer and the corresponding gain in the micro-transistor. The main goals of the new design are: significantly lower both optical crosstalk and after-pulse effects at high signal amplification, improve speed of single photoelectron pulse formation, and significantly reduce the device capacitance.

  12. Development of innovative silicon radiation detectors

    CERN Document Server

    Balbuena, JuanPablo

    Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

  13. Characterization procedures for double-sided silicon microstrip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

    1995-08-15

    Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

  14. Characterization procedures for double-sided silicon microstrip detectors

    International Nuclear Information System (INIS)

    Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

    1995-01-01

    Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

  15. Optimization of the coplanar interdigital capacitive sensor

    Science.gov (United States)

    Huang, Yunzhi; Zhan, Zheng; Bowler, Nicola

    2017-02-01

    Interdigital capacitive sensors are applied in nondestructive testing and material property characterization of low-conductivity materials. The sensor performance is typically described based on the penetration depth of the electric field into the sample material, the sensor signal strength and its sensitivity. These factors all depend on the geometry and material properties of the sensor and sample. In this paper, a detailed analysis is provided, through finite element simulations, of the ways in which the sensor's geometrical parameters affect its performance. The geometrical parameters include the number of digits forming the interdigital electrodes and the ratio of digit width to their separation. In addition, the influence of the presence or absence of a metal backplane on the sample is analyzed. Further, the effects of sensor substrate thickness and material on signal strength are studied. The results of the analysis show that it is necessary to take into account a trade-off between the desired sensitivity and penetration depth when designing the sensor. Parametric equations are presented to assist the sensor designer or nondestructive evaluation specialist in optimizing the design of a capacitive sensor.

  16. Design of electrical capacitance tomography sensors

    International Nuclear Information System (INIS)

    Yang, Wuqiang

    2010-01-01

    Electrical capacitance tomography (ECT) has been developed since the late 1980s for visualization and measurement of a permittivity distribution in a cross section using a multi-electrode capacitance sensor. While the hardware and image reconstruction algorithms for ECT have been published extensively and the topics have been reviewed, few papers have been published to discuss ECT sensors and the design issues, which are crucial for a specific application. This paper will briefly discuss the principles of ECT sensors, but mostly will address key issues for ECT sensor design, with reference to some existing ECT sensors as a good understanding of the key issues would help optimization of the design of ECT sensors. The key issues to be discussed include the number and length of electrodes, the use of external and internal electrodes, implications of wall thickness, earthed screens (including the outer screen, axial end screens and radial screens), driven guard electrodes, dealing with high temperature and high pressure, twin planes for velocity measurement by cross correlation and limitations in sensor diameter. While conventional ECT sensors are circular with the electrodes in a single plane or in twin planes, some non-conventional ECT sensors, such as square, conical and 3D sensors, will also be discussed. As a practical guidance, the procedure to fabricate an ECT sensor will be given. In the end are summary and discussion on future challenges, including re-engineering of ECT sensors. (topical review)

  17. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  18. Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

    Science.gov (United States)

    Scardelletti, Maximilian C.; Ponchak, George E.; Harsh, Kevin; Mackey, Jonathan A.; Meredith, Roger D.; Zorman, Christian A.; Beheim, Glenn M.; Dynys, Frederick W.; Hunter, Gary W.

    2014-01-01

    In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

  19. Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

    Directory of Open Access Journals (Sweden)

    Azrul Azlan Hamzah

    2008-11-01

    Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

  20. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    Science.gov (United States)

    Su, B. B.; Chen, X. Y.; Halvorsen, E.

    2016-11-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

  1. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    International Nuclear Information System (INIS)

    Su, B B; Chen, X Y; Halvorsen, E

    2016-01-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

  2. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  3. Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2013-01-01

    We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show

  4. Ion-step method for surface potential sensing of silicon nanowires

    NARCIS (Netherlands)

    Chen, S.; van Nieuwkasteele, Jan William; van den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    This paper presents a novel stimulus-response method for surface potential sensing of silicon nanowire (Si NW) field-effect transistors. When an "ion-step" from low to high ionic strength is given as a stimulus to the gate oxide surface, an increase of double layer capacitance is therefore expected.

  5. Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

    Science.gov (United States)

    Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

    1997-01-01

    The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

  6. Feasibility of novel four degrees of freedom capacitive force sensor for skin interface force

    Directory of Open Access Journals (Sweden)

    Murakami Chisato

    2012-11-01

    Full Text Available Abstract Background The objective of our study was to develop a novel capacitive force sensor that enables simultaneous measurements of yaw torque around the pressure axis and normal force and shear forces at a single point for the purpose of elucidating pressure ulcer pathogenesis and establishing criteria for selection of cushions and mattresses. Methods Two newly developed sensors (approximately 10 mm×10 mm×5 mm (10 and 20 mm×20 mm×5 mm (20 were constructed from silicone gel and four upper and lower electrodes. The upper and lower electrodes had sixteen combinations that had the function as capacitors of parallel plate type. The full scale (FS ranges of force/torque were defined as 0–1.5 N, –0.5-0.5 N and −1.5-1.5 N mm (10 and 0–8.7 N, –2.9-2.9 N and −16.8-16.8 N mm (20 in normal force, shear forces and yaw torque, respectively. The capacitances of sixteen capacitors were measured by an LCR meter (AC1V, 100 kHz when displacements corresponding to four degrees of freedom (DOF forces within FS ranges were applied to the sensor. The measurement was repeated three times in each displacement condition (10 only. Force/torque were calculated by corrected capacitance and were evaluated by comparison to theoretical values and standard normal force measured by an universal tester. Results In measurements of capacitance, the coefficient of variation was 3.23% (10. The Maximum FS errors of estimated force/torque were less than or equal to 10.1 (10 and 16.4% (20, respectively. The standard normal forces were approximately 1.5 (10 and 9.4 N (20 when pressure displacements were 3 (10 and 2 mm (20, respectively. The estimated normal forces were approximately 1.5 (10 and 8.6 N (10 in the same condition. Conclusions In this study, we developed a new four DOF force sensor for measurement of force/torque that occur between the skin and a mattress. In measurement of capacitance, the repeatability was good and it was confirmed that the sensor had

  7. Fund allocation using capacitated vehicle routing problem

    Science.gov (United States)

    Mamat, Nur Jumaadzan Zaleha; Jaaman, Saiful Hafizah; Ahmad, Rokiah Rozita; Darus, Maslina

    2014-09-01

    In investment fund allocation, it is unwise for an investor to distribute his fund into several assets simultaneously due to economic reasons. One solution is to allocate the fund into a particular asset at a time in a sequence that will either maximize returns or minimize risks depending on the investor's objective. The vehicle routing problem (VRP) provides an avenue to this issue. VRP answers the question on how to efficiently use the available fleet of vehicles to meet a given service demand, subjected to a set of operational requirements. This paper proposes an idea of using capacitated vehicle routing problem (CVRP) to optimize investment fund allocation by employing data of selected stocks in the FTSE Bursa Malaysia. Results suggest that CRVP can be applied to solve the issue of investment fund allocation and increase the investor's profit.

  8. A capacitive bioelectrode for recording electrophysiological signals

    International Nuclear Information System (INIS)

    Moreno Garcia, E.; Mujica Ascencio, S.; Rosa Vazquez, J. M.de la; Stolik Isakina, S.

    2012-01-01

    In this paper we describe a gel-free sensor with on-board electrode design, which capacitive couples to the skin to detect the electrical activity in the body. The integrated sensor is manufactured on a standard printed circuit board within 2.2 cm diameter enclosure that can operate through fabric or other insulation. The electrode includes amplification (60db gain) and passive band pass filtering (0.5 to 100 Hz). Active shielding surrounding the sensor plate is used to reduce noise pickup. The input referred noise, measured over the electrode bandwidth is 4 μV rms at 0.2 mm sensor distance, and 16 μV rms at 1.2 mm distance trough two cotton cloths. The bioelectrodes were coupled to the scalp trough hair for EEG signals (with 80 db gain), and coupled to the chest through clothing for ECG signals. The recorded signals show well performance of the designed bielectrode. (Author)

  9. Vertically aligned BCN nanotubes with high capacitance.

    Science.gov (United States)

    Iyyamperumal, Eswaramoorthi; Wang, Shuangyin; Dai, Liming

    2012-06-26

    Using a chemical vapor deposition method, we have synthesized vertically aligned BCN nanotubes (VA-BCNs) on a Ni-Fe-coated SiO(2)/Si substrate from a melamine diborate precursor. The effects of pyrolysis conditions on the morphology and thermal property of grown nanotubes, as well as the nanostructure and composition of an individual BCN nanotube, were systematically studied. It was found that nitrogen atoms are bonded to carbons in both graphitic and pyridinic forms and that the resultant VA-BCNs grown at 1000 °C show the highest specific capacitance (321.0 F/g) with an excellent rate capability and high durability with respect to nonaligned BCN (167.3 F/g) and undoped multiwalled carbon nanotubes (117.3 F/g) due to synergetic effects arising from the combined co-doping of B and N in CNTs and the well-aligned nanotube structure.

  10. Developments of capacitance stabilised etalon technology

    Science.gov (United States)

    Bond, R. A.; Foster, M.; Thwaite, C.; Thompson, C. K.; Rees, D.; Bakalski, I. V.; Pereira do Carmo, J.

    2017-11-01

    This paper describes a high-resolution optical filter (HRF) suitable for narrow bandwidth filtering in LIDAR applications. The filter is composed of a broadband interference filter and a narrowband Fabry-Perot etalon based on the capacitance stabilised concept. The key requirements for the HRF were a bandwidth of less than 40 pm, a tuneable range of over 6 nm and a transmission greater than 50%. These requirements combined with the need for very high out-of-band rejection (greater than 50 dB in the range 300 nm to 1200 nm) drive the design of the filter towards a combination of high transmission broadband filter and high performance tuneable, narrowband filter.

  11. Capacitive Neutralization Dialysis for Direct Energy Generation.

    Science.gov (United States)

    Liu, Yue; Zhang, Yi; Ou-Yang, Wei; Bastos Sales, Bruno; Sun, Zhuo; Liu, Fei; Zhao, Ran

    2017-08-15

    Capacitive neutralization dialysis energy (CNDE) is proposed as a novel energy-harvesting technique that is able to utilize waste acid and alkaline solutions to produce electrical energy. CNDE is a modification based on neutralization dialysis. It was found that a higher NaCl concentration led to a higher open-circuit potential when the concentrations of acid and alkaline solutions were fixed. Upon closing of the circuit, the membrane potential was used as a driving force to move counter ions into the electrical double layers at the electrode-liquid interface, thereby creating an ionic current. Correspondingly, in the external circuit, electrons flow through an external resistor from one electrode to the other, thereby generating electrical energy directly. The influence of external resistances was studied to achieve greater energy extraction, with the maximum output of 110 mW/m 2 obtained by employing an external resistance of 5 Ω together with the AC-coated electrode.

  12. The capacitated team orienteering problem with incomplete service

    NARCIS (Netherlands)

    Archetti, Claudia; Bianchessi, Nicola; Speranza, M. Grazia

    2013-01-01

    In this paper we study the capacitated version of the Team Orienteering Problem (TOP), that is the Capacitated TOP (CTOP) and the impact of relaxing the assumption that a customer, if served, must be completely served. We prove that the profit collected by the CTOP with Incomplete Service (CTOP-IS)

  13. Clean energy generation using capacitive electrodes in reverse electrodialysis

    NARCIS (Netherlands)

    Vermaas, David; Bajracharya, S.; Bastos Sales, B.; Saakes, Michel; Hamelers, B.; Nijmeijer, Dorothea C.

    2013-01-01

    Capacitive reverse electrodialysis (CRED) is a newly proposed technology to generate electricity from mixing of salt water and fresh water (salinity gradient energy) by using a membrane pile as in reverse electrodialysis (RED) and capacitive electrodes. The salinity difference between salt water and

  14. Electric field theory and the fallacy of void capacitance

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    1991-01-01

    The concept of the capacitance of a gaseous void is discussed as applied to electrical insulation science. The most pertinent aspect of the capacitance definition is that of reference to a single-valued potential difference between surfaces. This implies that these surfaces must be surfaces...

  15. Nanoscale capacitance: A quantum tight-binding model

    Science.gov (United States)

    Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

    2017-01-01

    Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

  16. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  17. Large Capacitance Measurement by Multiple Uses of MBL Charge Sensor

    Science.gov (United States)

    Lee, Jung Sook; Chae, Min; Kim, Jung Bog

    2010-01-01

    A recent article by Morse described interesting electrostatics experiments using an MBL charge sensor. In this application, the charge sensor has a large capacitance compared to the charged test object, so nearly all charges can be transferred to the sensor capacitor from the capacitor to be measured. However, the typical capacitance of commercial…

  18. Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

    Directory of Open Access Journals (Sweden)

    Bin Chen

    2017-03-01

    Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

  19. Capacitive-discharge-pumped copper bromide vapour laser

    International Nuclear Information System (INIS)

    Sukhanov, V B; Fedorov, V F; Troitskii, V O; Gubarev, F A; Evtushenko, Gennadii S

    2007-01-01

    A copper bromide vapour laser pumped by a high-frequency capacitive discharge is developed. It is shown that, by using of a capacitive discharge, it is possible to built a sealed off metal halide vapour laser of a simple design allowing the addition of active impurities into the working medium. (letters)

  20. Capacitive sensor for engine oil deterioration measurement

    Science.gov (United States)

    Shinde, Harish; Bewoor, Anand

    2018-04-01

    A simple system or mechanism for engine Oil (lubricating oil) deterioration monitoring is a need. As engine oil is an important element in I C engines and it is exposed to various strains depending on the operating conditions. If it becomes contaminated with dirt and metal particles, it can become too thick or thin and loses its protective properties, leads to unwanted friction. In turn, to avoid an engine failure, the oil must be changed before it loses its protective properties, which may be harmful to engine which deteriorates vehicle performance. At the same time, changing the lubricant too early, cause inefficient use of already depleting resources, also unwanted impact on the environment and economic reasons. Hence, it will be always helpful to know the quality of the oil under use. With this objective, the research work had been undertaken to develop a simple capacitance sensor for quantification of the quality of oil under use. One of the investigated parameter to quantify oil degradation is Viscosity (as per standard testing procedure: DIN 51562-1). In this research work, an alternative method proposed which analyzing change in capacitance of oil, to quantify the quality of oil underuse and compared to a conventional standard method. The experimental results reported in this paper shows trend for the same. Engine oil of grade SAE 15W40 used for light-duty vehicle, vans and passenger cars is used for experimentation. Suggested method can form a base for further research to develop a cost-effective method for indicating the time to change in engine oil quality have been presented.

  1. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Ya' akobovitz, A. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University, Beer-Sheva (Israel); Bedewy, M. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. J. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering and Laboratory for Manufacturing and Productivity, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-02-02

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

  2. Interdigitated electrodes as impedance and capacitance biosensors: A review

    Science.gov (United States)

    Mazlan, N. S.; Ramli, M. M.; Abdullah, M. M. A. B.; Halin, D. S. C.; Isa, S. S. M.; Talip, L. F. A.; Danial, N. S.; Murad, S. A. Z.

    2017-09-01

    Interdigitated electrodes (IDEs) are made of two individually addressable interdigitated comb-like electrode structures. IDEs are one of the most favored transducers, widely utilized in technological applications especially in the field of biological and chemical sensors due to their inexpensive, ease of fabrication process and high sensitivity. In order to detect and analyze a biochemical molecule or analyte, the impedance and capacitance signal need to be obtained. This paper investigates the working principle and influencer of the impedance and capacitance biosensors. The impedance biosensor depends on the resistance and capacitance while the capacitance biosensor influenced by the dielectric permittivity. However, the geometry and structures of the interdigitated electrodes affect both impedance and capacitance biosensor. The details have been discussed in this paper.

  3. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    International Nuclear Information System (INIS)

    Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

    2015-01-01

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices

  4. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    Science.gov (United States)

    Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

    2015-02-01

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

  5. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru [St. Petersburg Polytechnic University (Russian Federation); Chernev, A. L. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Klyachkin, L. E. [St. Petersburg Polytechnic University (Russian Federation); Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Emel’yanov, A. K.; Dubina, M. V. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

  6. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  7. Effect of Slice Error of Glass on Zero Offset of Capacitive Accelerometer

    Science.gov (United States)

    Hao, R.; Yu, H. J.; Zhou, W.; Peng, B.; Guo, J.

    2018-03-01

    Packaging process had been studied on capacitance accelerometer. The silicon-glass bonding process had been adopted on sensor chip and glass, and sensor chip and glass was adhered on ceramic substrate, the three-layer structure was curved due to the thermal mismatch, the slice error of glass lead to asymmetrical curve of sensor chip. Thus, the sensitive mass of accelerometer deviated along the sensitive direction, which was caused in zero offset drift. It was meaningful to confirm the influence of slice error of glass, the simulation results showed that the zero output drift was 12.3×10-3 m/s2 when the deviation was 40μm.

  8. A dual-mode secure UHF RFID tag with a crypto engine in 0.13-μm CMOS

    Science.gov (United States)

    Tao, Yang; Linghao, Zhu; Xi, Tan; Junyu, Wang; Lirong, Zheng; Hao, Min

    2016-07-01

    An ultra-high-frequency (UHF) radio frequency identification (RFID) secure tag chip with a non-crypto mode and a crypto mode is presented. During the supply chain management, the tag works in the non-crypto mode in which the on-chip crypto engine is not enabled and the tag chip has a sensitivity of -12.8 dBm for long range communication. At the point of sales (POS), the tag will be switched to the crypto mode in order to protect the privacy of customers. In the crypto mode, an advanced encryption standard (AES) crypto engine is enabled and the sensitivity of the tag chip is switched to +2 dBm for short range communication, which is a method of physical protection. The tag chip is implemented and verified in a standard 0.13-μm CMOS process. Project supported by the National Science & Technology Pillar Program of China (No. 2015BAK36B01).

  9. High-performance RF coil inductors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Malba, V.; Young, D.; Ou, J.J.; Bernhardt, A.F.; Boser, B.E.

    1998-03-01

    Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

  10. Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

    International Nuclear Information System (INIS)

    Kim, J.; McMurray, J. S.; Williams, C. C.; Slinkman, J.

    1998-01-01

    We report the results of a 2-step two-dimensional (2D) diffusion study by Scanning Capacitance Microscopy (SCM) and 2D TSUPREM IV process simulation. A quantitative 2D dopant profile of gate-like structures consisting heavily implanted n+ regions separated by a lighter doped n-type region underneath 0.56 μm gates is measured with the SCM. The SCM is operated in the constant-change-in-capacitance mode. The 2-D SCM data is converted to dopant density through a physical model of the SCM/silicon interaction. This profile has been directly compared with 2D TSUPREM IV process simulation and used to calibrate the simulation parameters. The sample is then further subjected to an additional diffusion in a furnace for 80 minutes at 1000C. The SCM measurement is repeated on the diffused sample. This final 2D dopant profile is compared with a TSUPREM IV process simulation tuned to fit the earlier profile with no change in the parameters except the temperature and time for the additional diffusion. Our results indicate that there is still a significant disagreement between the two profiles in the lateral direction. TSUPREM IV simulation considerably underestimates the diffusion under the gate region

  11. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  12. The use of large area silicon sensors for thermal neutron detection

    International Nuclear Information System (INIS)

    Schulte, R.L.; Swanson, F.; Kesselman, M.

    1994-01-01

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (Aε) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 Ω cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm 2 and 10.5 cm 2 is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  13. The use of large area silicon sensors for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, R.L. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Swanson, F. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Kesselman, M. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States))

    1994-12-30

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (A[epsilon]) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 [Omega] cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm[sup 2] and 10.5 cm[sup 2] is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  14. Distribution of coronary arterial capacitance in a canine model.

    Science.gov (United States)

    Lader, A S; Smith, R S; Phillips, G C; McNamee, J E; Abel, F L

    1998-03-01

    The capacitative properties of the major left coronary arteries, left main (LM), left anterior descending (LAD), and left circumflex (LCX), were studied in 19 open-chest isolated dog hearts. Capacitance was determined by using ramp perfusion and a left ventricular-to-coronary shunt diastolic decay method; both methods gave similar results, indicating a minimal systolic capacitative component. Increased pericardial pressure (PCP), 25 mmHg, was used to experimentally alter transmural wall pressure. The response to increased PCP was different in the LAD vs. LCX; increasing PCP decreased capacitance in the LCX but increased capacitance in the LAD. This may have been due to the different intramural vs. epicardial volume distribution of these vessels and a decrease in intramural tension during increased PCP. Increased PCP decreased LCX capacitance by approximately 13%, but no changes in conductance or zero flow pressure intercept occurred in any of the three vessels, i. e., evidence against the waterfall theory of vascular collapse at these levels of PCP. Coronary arterial capacitance was also linearly related to perfusion pressure.

  15. Development trends of combined inductance-capacitance electromechanical energy converters

    Directory of Open Access Journals (Sweden)

    Karayan Hamlet

    2018-01-01

    Full Text Available In the article the modern state of completely new direction of electromechanical science such as combined inductive-capacitive electromechanics is considered. The wide spectra of its possible practical applications and prospects for further development are analyzed. A new approach for mathematical description of transients in dualcon jugate dynamic systems is proposed. On the basis of the algorithm differential equations for inductive-capacitive compatible electromechanical energy converters are derived. The generalized Lagrangian theory of combined inductively-capacitive electric machines was developed as a union of generalized Lagrangian models of inductive and capacitive electro-mechanical energy converters developed on the basis of the basic principles of binary-conjugate electrophysics. The author gives equations of electrodynamics and electromechanics of combined inductive-capacitive electric machines in case there are active electrotechnical materials of dual purpose (ferroelectromagnets in the structure of their excitation system. At the same time, the necessary Lagrangian for combined inductive-capacitive forces was built using new technologies of interaction between inductive and capacitive subsystems. The joint solution of these equations completely determines the dynamic behavior and energy characteristics of the generalized model of combined machines of any design and in any modes of interaction of their functional elements

  16. Design of a charge sensitive preamplifier on high resistivity silicon

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

    1987-01-01

    A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

  17. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...... in a number of applications. In this paper, the discharging energy efficiency definition is introduced. The proposed converter has been experimentally tested with the film capacitive load and the DEAP actuator, and the experimental results are shown together with the efficiency measurements....

  18. Human body capacitance: static or dynamic concept? [ESD

    DEFF Research Database (Denmark)

    Jonassen, Niels M

    1998-01-01

    A standing human body insulated from ground by footwear and/or floor covering is in principle an insulated conductor and has, as such, a capacitance, i.e. the ability to store a charge and possibly discharge the stored energy in a spark discharge. In the human body, the human body capacitance (HBC...... when a substantial part of the flux extends itself through badly defined stray fields. Since the concept of human body capacitance is normally used in a static (electric) context, it is suggested that the HBC be determined by a static method. No theoretical explanation of the observed differences...

  19. Capacitive density measurement for supercritical hydrogen

    Science.gov (United States)

    Funke, Th; Haberstroh, Ch; Szoucsek, K.; Schott, S.; Kunze, K.

    2017-12-01

    A new approach for automotive hydrogen storage systems is the so-called cryo-compressed hydrogen storage (CcH2). It has a potential for increased energy densities and thus bigger hydrogen amounts onboard, which is the main attractiveness for car manufacturers such as BMW. This system has further advantages in terms of safety, refueling and cooling potential. The current filling level measurement by means of pressure and temperature measurement and subsequent density calculation faces challenges especially in terms of precision. A promising alternative is the capacitive gauge. This measuring principle can determine the filling level of the CcH2 tank with significantly smaller tolerances. The measuring principle is based on different dielectric constants of gaseous and liquid hydrogen. These differences are successfully leveraged in liquid hydrogen storage systems (LH2). The present theoretical analysis shows that the dielectric values of CcH2 in the relevant operating range are comparable to LH2, thus achieving similarly good accuracy. The present work discusses embodiments and implementations for such a sensor in the CcH2 tank.

  20. Hydrogen atom kinetics in capacitively coupled plasmas

    Science.gov (United States)

    Nunomura, Shota; Katayama, Hirotaka; Yoshida, Isao

    2017-05-01

    Hydrogen (H) atom kinetics has been investigated in capacitively coupled very high frequency (VHF) discharges at powers of 16-780 mW cm-2 and H2 gas pressures of 0.1-2 Torr. The H atom density has been measured using vacuum ultra violet absorption spectroscopy (VUVAS) with a micro-discharge hollow cathode lamp as a VUV light source. The measurements have been performed in two different electrode configurations of discharges: conventional parallel-plate diode and triode with an intermediate mesh electrode. We find that in the triode configuration, the H atom density is strongly reduced across the mesh electrode. The H atom density varies from ˜1012 cm-3 to ˜1010 cm-3 by crossing the mesh with 0.2 mm in thickness and 36% in aperture ratio. The fluid model simulations for VHF discharge plasmas have been performed to study the H atom generation, diffusion and recombination kinetics. The simulations suggest that H atoms are generated in the bulk plasma, by the electron impact dissociation (e + H2 \\to e + 2H) and the ion-molecule reaction (H2 + + H2 \\to {{{H}}}3+ + H). The diffusion of H atoms is strongly limited by a mesh electrode, and thus the mesh geometry influences the spatial distribution of the H atoms. The loss of H atoms is dominated by the surface recombination.

  1. Locating Depots for Capacitated Vehicle Routing

    DEFF Research Database (Denmark)

    Gørtz, Inge Li; Nagarajan, Viswanath

    2011-01-01

    that all demands are satisfied and the total cost is minimized. Our main result is a constant-factor approximation algorithm for k-LocVRP. To achieve this result, we reduce k-LocVRP to the following generalization of k median, which might be of independent interest. Given a metric (V, d), bound k...... median forest, which leads to a (12+E)-approximation algorithm for k-LocVRP, for any constant E > 0. The algorithm for k median forest is t-swap local search, and we prove that it has locality gap 3 + 2 t ; this generalizes the corresponding result for k median [3]. Finally we consider the k median......We study a location-routing problem in the context of capacitated vehicle routing. The input to k-LocVRP is a set of demand locations in a metric space and a fleet of k vehicles each of capacity Q. The objective is to locate k depots, one for each vehicle, and compute routes for the vehicles so...

  2. Ultrasensitive interdigitated capacitance immunosensor using gold nanoparticles

    Science.gov (United States)

    Alizadeh Zeinabad, Hojjat; Ghourchian, Hedayatollah; Falahati, Mojtaba; Fathipour, Morteza; Azizi, Marzieh; Boutorabi, Seyed Mehdi

    2018-06-01

    Immunosensors based on interdigitated electrodes (IDEs), have recently demonstrated significant improvements in the sensitivity of capacitance detection. Herein, a novel type of highly sensitive, compact and portable immunosensor based on a gold interdigital capacitor has been designed and developed for the rapid detection of hepatitis B surface antigen (HBsAg). To improve the efficiency of antibody immobilization and time-saving, a self-assembled monolayer (SAM) of 2-mercaptoethylamine film was coated on IDEs. Afterwards, carboxyl groups on primary antibodies were activated through 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide and were immobilized on amino-terminated SAM for better control of the oriented immobilization of antibodies on gold IDEs. In addition, gold nanoparticles conjugated with a secondary antibody were used to enhance the sensitivity. Under optimal conditions, the immunosensor exhibited the sensitivity of 0.22 nF.pg ml–1, the linear range from 5 pg ml‑1 to 1 ng ml–1 and the detection limit of 1.34 pg ml‑1, at a signal-to-noise ratio of 3.

  3. Inverse modeling applied to Scanning Capacitance Microscopy for improved spatial resolution and accuracy

    International Nuclear Information System (INIS)

    McMurray, J. S.; Williams, C. C.

    1998-01-01

    Scanning Capacitance Microscopy (SCM) is capable of providing two-dimensional information about dopant and carrier concentrations in semiconducting devices. This information can be used to calibrate models used in the simulation of these devices prior to manufacturing and to develop and optimize the manufacturing processes. To provide information for future generations of devices, ultra-high spatial accuracy (<10 nm) will be required. One method, which potentially provides a means to obtain these goals, is inverse modeling of SCM data. Current semiconducting devices have large dopant gradients. As a consequence, the capacitance probe signal represents an average over the local dopant gradient. Conversion of the SCM signal to dopant density has previously been accomplished with a physical model which assumes that no dopant gradient exists in the sampling area of the tip. The conversion of data using this model produces results for abrupt profiles which do not have adequate resolution and accuracy. A new inverse model and iterative method has been developed to obtain higher resolution and accuracy from the same SCM data. This model has been used to simulate the capacitance signal obtained from one and two-dimensional ideal abrupt profiles. This simulated data has been input to a new iterative conversion algorithm, which has recovered the original profiles in both one and two dimensions. In addition, it is found that the shape of the tip can significantly impact resolution. Currently SCM tips are found to degrade very rapidly. Initially the apex of the tip is approximately hemispherical, but quickly becomes flat. This flat region often has a radius of about the original hemispherical radius. This change in geometry causes the silicon directly under the disk to be sampled with approximately equal weight. In contrast, a hemispherical geometry samples most strongly the silicon centered under the SCM tip and falls off quickly with distance from the tip's apex. Simulation

  4. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    Science.gov (United States)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  5. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  6. A capacitive ECG array with visual patient feedback.

    Science.gov (United States)

    Eilebrecht, Benjamin; Schommartz, Antje; Walter, Marian; Wartzek, Tobias; Czaplik, Michael; Leonhardt, Steffen

    2010-01-01

    Capacitive electrocardiogram (ECG) sensing is a promising technique for less constraining vital signal measurement and close to a commercial application. Even bigger trials testing the diagnostic significance were already done with single lead systems. Anyway, most applications to be found in research are limited to one channel and thus limited in its diagnostic relevance as only diseases coming along with a change of the heart rate can be diagnosed adequately. As a consequence the need for capacitive multi-channel ECGs combining the diagnostic relevance and the advantages of capacitive ECG sensing emerges. This paper introduces a capacitive ECG measurement system which allows the recording of standardized ECG leads according to Einthoven and Goldberger by means of an electrode array with nine electrodes.

  7. Fringe Capacitance of a Parallel-Plate Capacitor.

    Science.gov (United States)

    Hale, D. P.

    1978-01-01

    Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

  8. Capacitance-Power-Hysteresis Trilemma in Nanoporous Supercapacitors

    Directory of Open Access Journals (Sweden)

    Alpha A. Lee

    2016-06-01

    Full Text Available Nanoporous supercapacitors are an important player in the field of energy storage that fill the gap between dielectric capacitors and batteries. The key challenge in the development of supercapacitors is the perceived trade-off between capacitance and power delivery. Current efforts to boost the capacitance of nanoporous supercapacitors focus on reducing the pore size so that they can only accommodate a single layer of ions. However, this tight packing compromises the charging dynamics and hence power density. We show via an analytical theory and Monte Carlo simulations that charging is sensitively dependent on the affinity of ions to the pores, and that high capacitances can be obtained for ionophobic pores of widths significantly larger than the ion diameter. Our theory also predicts that charging can be hysteretic with a significant energy loss per cycle for intermediate ionophilicities. We use these observations to explore the parameter regimes in which a capacitance-power-hysteresis trilemma may be avoided.

  9. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius; Kodzius, Rimantas; Vanagas, Galius

    2013-01-01

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here

  10. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    MS received 4 May 2016; accepted 10 January 2017; published online 21 August 2017. Abstract. Capacitance vs. ... with high-k materials is the prime technological challenge. [2]. ... reliability of MOS devices are strongly dependent on the for-.

  11. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius

    2013-10-22

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

  12. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

  13. Capacitance-Power-Hysteresis Trilemma in Nanoporous Supercapacitors

    OpenAIRE

    Lee, Alpha A; Vella, Dominic; Goriely, Alain; Kondrat, Svyatoslav

    2015-01-01

    Nanoporous supercapacitors are an important player in the field of energy storage that fill the gap between dielectric capacitors and batteries. The key challenge in the development of supercapacitors is the perceived trade-off between capacitance and power delivery. Current efforts to boost the capacitance of nanoporous supercapacitors focus on reducing the pore size so that they can only accommodate a single layer of ions. However, this tight packing compromises the charging dynamics and he...

  14. Conjugate Image Theory Applied on Capacitive Wireless Power Transfer

    OpenAIRE

    Ben Minnaert; Nobby Stevens

    2017-01-01

    Wireless power transfer using a magnetic field through inductive coupling is steadily entering the market in a broad range of applications. However, for certain applications, capacitive wireless power transfer using electric coupling might be preferable. In order to obtain a maximum power transfer efficiency, an optimal compensation network must be designed at the input and output ports of the capacitive wireless link. In this work, the conjugate image theory is applied to determine this opti...

  15. Current Progress of Capacitive Deionization for Removal of Pollutant Ions

    Science.gov (United States)

    Gaikwad, Mahendra S.; Balomajumder, Chandrajit

    2016-08-01

    A mini review of a recently developing water purification technology capacitive deionization (CDI) applied for removal of pollutant ions is provided. The current progress of CDI for removal of different pollutant ions such as arsenic, fluoride, boron, phosphate, lithium, copper, cadmium, ferric, and nitrate ions is presented. This paper aims at motivating new research opportunities in capacitive deionization technology for removal of pollutant ions from polluted water.

  16. Capacitive Imaging For Skin Characterization and Solvent Penetration

    OpenAIRE

    Xiao, P; Zhang, X; Bontozoglou, C

    2016-01-01

    Capacitive contact imaging has shown potential in measuring skin properties including hydration, micro relief analysis, as well as solvent penetration measurements . Through calibration we can also measure the absolute permittivity of the skin, and from absolute permittivity we then work out the absolute water content (or solvent content) in skin. In this paper, we present our latest study of capacitive contact imaging for skin characterization, i.e. skin hydration and skin damages etc. The r...

  17. New Type Multielectrode Capacitance Sensor for Liquid Level

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y R [China University of Petroleum (Huadong), Qingdao (China); Shi, A P [Shandong University of Science and Technology, Qingdao (China); Chen, G Q [Shandong University of Science and Technology, Qingdao (China); Chang, Y Y [Shandong University of Science and Technology, Qingdao (China); Hang, Z [Shandong University of Science and Technology, Qingdao (China); Liu, B M [Binzhou University, Binzhou (China)

    2006-10-15

    This paper introduces the design of a new type multielectrode capacitance sensor for liquid level. The system regards electric field sensor MC33794 as the core and applies microcontroller MC9S12DJ128 to realize intelligent liquid level monitoring system, which overcomes the disadvantages of the traditional capacitance sensor, improves on the anti-jamming ability and the measurement precision and simplifies the system structure. Finally, the paper sums up the design of the system.

  18. Capacitive Coupling in Double-Circuit Transmission Lines

    Directory of Open Access Journals (Sweden)

    Zdenka Benesova

    2004-01-01

    Full Text Available The paper describes an algorithm for calculation of capacitances and charges on conductors in systems with earth wires and in double-circuit overhead lines with respect to phase arrangement. A balanced voltage system is considered. A suitable transposition of individual conductors enables to reduce the electric and magnetic fields in vicinity of overhead lines and to limit the inductive and capacitive linkage. The procedure is illustrated on examples the results of which lead to particular recommendations for designers.

  19. Introducing radiality constraints in capacitated location-routing problems

    Directory of Open Access Journals (Sweden)

    Eliana Mirledy Toro Ocampo

    2017-03-01

    Full Text Available In this paper, we introduce a unified mathematical formulation for the Capacitated Vehicle Routing Problem (CVRP and for the Capacitated Location Routing Problem (CLRP, adopting radiality constraints in order to guarantee valid routes and eliminate subtours. This idea is inspired by formulations already employed in electric power distribution networks, which requires a radial topology in its operation. The results show that the proposed formulation greatly improves the convergence of the solver.

  20. Uncertainty quantification in capacitive RF MEMS switches

    Science.gov (United States)

    Pax, Benjamin J.

    Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

  1. A novel sandwich differential capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure

    International Nuclear Information System (INIS)

    Xiao, D B; Li, Q S; Hou, Z Q; Wang, X H; Chen, Z H; Xia, D W; Wu, X Z

    2016-01-01

    This paper presents a novel differential capacitive silicon micro-accelerometer with symmetrical double-sided serpentine beam-mass sensing structure and glass–silicon–glass sandwich structure. The symmetrical double-sided serpentine beam-mass sensing structure is fabricated with a novel pre-buried mask fabrication technology, which is convenient for manufacturing multi-layer sensors. The glass–silicon–glass sandwich structure is realized by a double anodic bonding process. To solve the problem of the difficulty of leading out signals from the top and bottom layer simultaneously in the sandwich sensors, a silicon pillar structure is designed that is inherently simple and low-cost. The prototype is fabricated and tested. It has low noise performance (the peak to peak value is 40 μg) and μg-level Allan deviation of bias (2.2 μg in 1 h), experimentally demonstrating the effectiveness of the design and the novel fabrication technology. (paper)

  2. Evaluation of Pressure Capacitive Sensors for Application in Grasping and Manipulation Analysis.

    Science.gov (United States)

    Pessia, Paola; Cordella, Francesca; Schena, Emiliano; Davalli, Angelo; Sacchetti, Rinaldo; Zollo, Loredana

    2017-12-08

    The analysis of the human grasping and manipulation capabilities is paramount for investigating human sensory-motor control and developing prosthetic and robotic hands resembling the human ones. A viable solution to perform this analysis is to develop instrumented objects measuring the interaction forces with the hand. In this context, the performance of the sensors embedded in the objects is crucial. This paper focuses on the experimental characterization of a class of capacitive pressure sensors suitable for biomechanical analysis. The analysis was performed in three loading conditions (Distributed load, 9 Tips load, and Wave-shaped load, thanks to three different inter-elements) via a traction/compression testing machine. Sensor assessment was also carried out under human- like grasping condition by placing a silicon material with the same properties of prosthetic cosmetic gloves in between the sensor and the inter-element in order to simulate the human skin. Data show that the input-output relationship of the analyzed, sensor is strongly influenced by both the loading condition (i.e., type of inter-element) and the grasping condition (with or without the silicon material). This needs to be taken into account to avoid significant measurement error. To go over this hurdle, the sensors have to be calibrated under each specific condition in order to apply suitable corrections to the sensor output and significantly improve the measurement accuracy.

  3. Switchless charge-discharge circuit for electrical capacitance tomography

    International Nuclear Information System (INIS)

    Kryszyn, J; Smolik, W T; Radzik, B; Olszewski, T; Szabatin, R

    2014-01-01

    The main factor limiting the performance of electrical capacitance tomography (ECT) is an extremely low value of inter-electrode capacitances. The charge-discharge circuit is a well suited circuit for a small capacitance measurement due to its immunity to noise and stray capacitance, although it has a problem associated with a charge injected by the analogue switches, which results in a dc offset. This paper presents a new diode-based circuit for capacitance measurement in which a charge transfer method is realized without switches. The circuit was built and tested in one channel configuration with 16 multiplexed electrodes. The performance of the elaborated circuit and a comparison with a classic charge-discharge circuit are presented. The elaborated circuit can be used for sensors with inter-electrode capacitances not lower than 10 fF. The presented approach allows us to obtain a similar performance to the classic charge-discharge circuit, but has a simplified design. A lack of the need to synchronize the analogue switches in the transmitter and the receiver part of this circuit could be a desirable feature in the design of measurement systems integrated with electrodes. (paper)

  4. Capacitance of carbon-based electrical double-layer capacitors.

    Science.gov (United States)

    Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

    2014-01-01

    Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

  5. Análisis mecánico por elementos finitos de una antena UHF en la órbita de Marte

    OpenAIRE

    Moreno García, Carlos

    2015-01-01

    El proyecto desarrolla el diseño mecánico de una antena helicoidal en banda UHF que será parte de un satélite cuyo destino final será Marte. Los principales objetivos de la misión son: Buscar trazas o evidencia de metano y otros gases atmosféricos que podrían manifestar signos de procesos biológicos o geológicos activos, es decir, buscar indicios de vida pasada en Marte Poner a prueba la tecnología necesaria para posteriores misiones europeas a Marte. El proyecto se centrará en la...

  6. Time-dependent resonant UHF CI approach for the photo-induced dynamics of the multi-electron system confined in 2D QD

    Energy Technology Data Exchange (ETDEWEB)

    Okunishi, Takuma; Clark, Richard; Takeda, Kyozaburo [Waseda University, Tokyo 169-8555 (Japan); Kusakabe, Kouichi [Osaka University, Osaka 560-8531 (Japan); Tomita, Norikazu [Yamagata University, Yamagata 960-8560 (Japan)

    2013-12-04

    We extend the static multi-reference description (resonant UHF) to the dynamic system in order to include the correlation effect over time, and simplify the TD Schrödinger equation (TD-CI) into a time-developed rate equation where the TD external field Ĥ′(t) is then incorporated directly in the Hamiltonian without any approximations. We apply this TD-CI method to the two-electron ground state of a 2D quantum dot (QD) under photon injection and study the resulting two-electron Rabi oscillation.

  7. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  8. Simulation of Silicon Photomultiplier Signals

    Science.gov (United States)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Lohner, Herbert; Schaart, Dennis R.

    2009-12-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The discharge of a single microcell is relatively well understood and electronic models exist to simulate this process. In this paper we introduce an extended model that is able to simulate the simultaneous discharge of multiple cells. This model is used to predict the SiPM signal in response to fast light pulses as a function of the number of fired cells, taking into account the influence of the input impedance of the SiPM preamplifier. The model predicts that the electronic signal is not proportional to the number of fired cells if the preamplifier input impedance is not zero. This effect becomes more important for SiPMs with lower parasitic capacitance (which otherwise is a favorable property). The model is validated by comparing its predictions to experimental data obtained with two different SiPMs (Hamamatsu S10362-11-25u and Hamamatsu S10362-33-25c) illuminated with ps laser pulses. The experimental results are in good agreement with the model predictions.

  9. Capacitive divider for output voltage measurement of intense electron beam accelerator

    International Nuclear Information System (INIS)

    Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

    2012-01-01

    A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

  10. Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

    KAUST Repository

    Ghoneim, Mohamed T.

    2013-11-20

    We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  12. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  13. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  14. A study of timing properties of Silicon Photomultipliers

    Science.gov (United States)

    Avella, Paola; De Santo, Antonella; Lohstroh, Annika; Sajjad, Muhammad T.; Sellin, Paul J.

    2012-12-01

    Silicon Photomultipliers (SiPMs) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.

  15. Four-channel readout ASIC for silicon pad detectors

    International Nuclear Information System (INIS)

    Baturitsky, M.A.; Zamiatin, N.I.

    2000-01-01

    A custom front-end readout ASIC has been designed for silicon calorimeters supposed to be used in high-energy physics experiments. The ASIC was produced using BJT-JFET technology. It contains four channels of a fast low-noise charge-sensitive preamplifier (CSP) with inverting outputs summed by a linear adder (LA) followed by an RC-CR shaping amplifier (SA) with 30 ns peaking time. Availability of separate outputs of the CSPs and the LA makes it possible to join any number of silicon detector layers to obtain the longitudinal and transversal resolution required using only this ASIC in any silicon calorimeter minitower configuration. Noise performance is ENC=1800e - +18e - /pF at 30 ns peaking time for detector capacitance up to C d =400 pF. Rise time is 8 ns at input capacitance C d =100 pF. Power dissipation is less than 50 mW/ chip at voltage supply 5 V

  16. Triangulating the Position of Antimony Donors Implanted in Silicon

    Science.gov (United States)

    Bureau-Oxton, Chloe; Nielsen, Erik; Luhman, Dwight; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Pioro-Ladrière, Michel; Lilly, Michael; Carroll, Malcolm

    2015-03-01

    A potential candidate for a quantum bit is a single Sb atom implanted in silicon. A single-electron-transistor (SET) situated close to an Sb donor can be used to measure the occupancy and spin of the electron on the donor while the lithographically patterned poly-silicon gates defining the SET can be used to control donor occupancy. In our samples two clusters of Sb donors have been implanted adjacent to opposite sides of the SET through a self-aligned process. In this talk, we will present experimental results that allow us to determine the approximate position of different donors by determining their relative capacitance to pairs of the SET's poly-silicon gates. We will present the results of capacitive-based modeling calculations that allow us to further locate the position of the donors. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  17. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  18. A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process

    International Nuclear Information System (INIS)

    Wang Jingchao; Zhang Chun; Wang Zhihua

    2010-01-01

    A low cost fully integrated single-chip UHF radio frequency identification (RFID) reader SoC for short distance handheld applications is presented. The SoC integrates all building blocks-including an RF transceiver, a PLL frequency synthesizer, a digital baseband and an MCU-in a 0.18 μm CMOS process. A high-linearity RX front-end is designed to handle the large self-interferer. A class-E power amplifier with high power efficiency is also integrated to fulfill the function of a UHF passive RFID reader. The measured maximum output power of the transmitter is 20.28 dBm and the measured receiver sensitivity is -60 dBm. The digital baseband including MCU core consumes 3.91 mW with a clock of 10 MHz and the analog part including power amplifier consumes 368.4 mW. The chip has a die area of 5.1 x 3.8 mm 2 including pads. (semiconductor integrated circuits)

  19. A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 {mu}m CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jingchao; Zhang Chun; Wang Zhihua, E-mail: wangjc@gmail.co [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2010-08-15

    A low cost fully integrated single-chip UHF radio frequency identification (RFID) reader SoC for short distance handheld applications is presented. The SoC integrates all building blocks-including an RF transceiver, a PLL frequency synthesizer, a digital baseband and an MCU-in a 0.18 {mu}m CMOS process. A high-linearity RX front-end is designed to handle the large self-interferer. A class-E power amplifier with high power efficiency is also integrated to fulfill the function of a UHF passive RFID reader. The measured maximum output power of the transmitter is 20.28 dBm and the measured receiver sensitivity is -60 dBm. The digital baseband including MCU core consumes 3.91 mW with a clock of 10 MHz and the analog part including power amplifier consumes 368.4 mW. The chip has a die area of 5.1 x 3.8 mm{sup 2} including pads. (semiconductor integrated circuits)

  20. A Tower-based Prototype VHF/UHF Radar for Subsurface Sensing: System Description and Data Inversion Results

    Science.gov (United States)

    Moghaddam, Mahta; Pierce, Leland; Tabatabaeenejad, Alireza; Rodriguez, Ernesto

    2005-01-01

    Knowledge of subsurface characteristics such as permittivity variations and layering structure could provide a breakthrough in many terrestrial and planetary science disciplines. For Earth science, knowledge of subsurface and subcanopy soil moisture layers can enable the estimation of vertical flow in the soil column linking surface hydrologic processes with that in the subsurface. For planetary science, determining the existence of subsurface water and ice is regarded as one of the most critical information needs for the study of the origins of the solar system. The subsurface in general can be described as several near-parallel layers with rough interfaces. Each homogenous rough layer can be defined by its average thickness, permittivity, and rms interface roughness assuming a known surface spectral distribution. As the number and depth of layers increase, the number of measurements needed to invert for the layer unknowns also increases, and deeper penetration capability would be required. To nondestructively calculate the characteristics of the rough layers, a multifrequency polarimetric radar backscattering approach can be used. One such system is that we have developed for data prototyping of the Microwave Observatory of Subcanopy and Subsurface (MOSS) mission concept. A tower-mounted radar makes backscattering measurements at VHF, UHF, and L-band frequencies. The radar is a pulsed CW system, which uses the same wideband antenna to transmit and receive the signals at all three frequencies. To focus the beam at various incidence angles within the beamwidth of the antenna, the tower is moved vertically and measurements made at each position. The signals are coherently summed to achieve focusing and image formation in the subsurface. This requires an estimate of wave velocity profiles. To solve the inverse scattering problem for subsurface velocity profile simultaneously with radar focusing, we use an iterative technique based on a forward numerical solution of

  1. Electrosorption capacitance of nanostructured carbon-based materials.

    Science.gov (United States)

    Hou, Chia-Hung; Liang, Chengdu; Yiacoumi, Sotira; Dai, Sheng; Tsouris, Costas

    2006-10-01

    The fundamental mechanism of electrosorption of ions developing a double layer inside nanopores was studied via a combination of experimental and theoretical studies. A novel graphitized-carbon monolithic material has proven to be a good electrical double-layer capacitor that can be applied in the separation of ions from aqueous solutions. An extended electrical double-layer model indicated that the pore size distribution plays a key role in determining the double-layer capacitance in an electrosorption process. Because of the occurrence of double-layer overlapping in narrow pores, mesopores and micropores make significantly different contributions to the double-layer capacitance. Mesopores show good electrochemical accessibility. Micropores present a slow mass transfer of ions and a considerable loss of double-layer capacitance, associated with a shallow potential distribution inside pores. The formation of the diffuse layer inside the micropores determines the magnitude of the double-layer capacitance at low electrolyte concentrations and at conditions close to the point of zero charge of the material. The effect of the double-layer overlapping on the electrosorption capacitance can be reduced by increasing the pore size, electrolyte concentration, and applied potential. The results are relevant to water deionization.

  2. Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

    Directory of Open Access Journals (Sweden)

    Xinhua Mao

    2014-01-01

    Full Text Available Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

  3. Nonlinear dynamics of capacitive charging and desalination by porous electrodes

    Science.gov (United States)

    Biesheuvel, P. M.; Bazant, M. Z.

    2010-03-01

    The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

  4. cLite – A Capacitive Signal Conditioning IC

    Directory of Open Access Journals (Sweden)

    Krauss Gudrun

    2009-12-01

    Full Text Available The ZMD31210 cLite™ – a new member of the ZMDI’s Lite™ family of low-cost sensor signal conditioner (SSC integrated circuits – is described in this paper. The cLite™ is the first conditioner for capacitive sensors. Supporting sensor capacitances from 2 pF up to 260 pF, the new sensor signal conditioner covers a wide range of applications. An important aspect of conditioning a capacitance sensor input signal is the adaptation of the capacitive-to-digital converter (CDC input range to the sensor signal span and offset values in order to maximize accuracy. All typical features of the Lite™ family including the digital calibration math based on EEPROM-stored coefficients and a variety of outputs (I2C™, SPI, PDM, and programmable alarms are integrated in the cLite™ as well. Additional features including a sleep mode and low supply voltage range (down to 2.3 V support the low power concept. The paper focuses in particular on the capacitance sensor adaptation and high precision sensor conditioning.

  5. Capacitance-based frequency adjustment of micro piezoelectric vibration generator.

    Science.gov (United States)

    Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

    2014-01-01

    Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

  6. Characterization of silicon-on-insulator wafers

    Science.gov (United States)

    Park, Ki Hoon

    The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

  7. Fabrication of a printed capacitive air-gap touch sensor

    Science.gov (United States)

    Lee, Sang Hoon; Seo, Hwiwon; Lee, Sangyoon

    2018-05-01

    Unlike lithography-based processes, printed electronics does not require etching, which makes it difficult to fabricate electronic devices with an air gap. In this study, we propose a method to fabricate capacitive air-gap touch sensors via printing and coating. First, the bottom electrode was fabricated on a flexible poly(ethylene terephthalate) (PET) substrate using roll-to-roll gravure printing with silver ink. Then poly(dimethylsiloxane) (PDMS) was spin coated to form a sacrificial layer. The top electrode was fabricated on the sacrificial layer by spin coating with a stretchable silver ink. The sensor samples were then put in a tetrabutylammonium (TBAF) bath to generate the air gap by removing the sacrificial layer. The capacitance of the samples was measured for verification, and the results show that the capacitance increases in proportion to the applied force from 0 to 2.5 N.

  8. CMOS capacitive biosensors for highly sensitive biosensing applications.

    Science.gov (United States)

    Chang, An-Yu; Lu, Michael S-C

    2013-01-01

    Magnetic microbeads are widely used in biotechnology and biomedical research for manipulation and detection of cells and biomolecules. Most lab-on-chip systems capable of performing manipulation and detection require external instruments to perform one of the functions, leading to increased size and cost. This work aims at developing an integrated platform to perform these two functions by implementing electromagnetic microcoils and capacitive biosensors on a CMOS (complementary metal oxide semiconductor) chip. Compared to most magnetic-type sensors, our detection method requires no externally applied magnetic fields and the associated fabrication is less complicated. In our experiment, microbeads coated with streptavidin were driven to the sensors located in the center of microcoils with functionalized anti-streptavidin antibody. Detection of a single microbead was successfully demonstrated using a capacitance-to-frequency readout. The average capacitance changes for the experimental and control groups were -5.3 fF and -0.2 fF, respectively.

  9. A microcontroller-based interface circuit for lossy capacitive sensors

    International Nuclear Information System (INIS)

    Reverter, Ferran; Casas, Òscar

    2010-01-01

    This paper introduces and analyses a low-cost microcontroller-based interface circuit for lossy capacitive sensors, i.e. sensors whose parasitic conductance (G x ) is not negligible. Such a circuit relies on a previous circuit also proposed by the authors, in which the sensor is directly connected to a microcontroller without using either a signal conditioner or an analogue-to-digital converter in the signal path. The novel circuit uses the same hardware, but it performs an additional measurement and executes a new calibration technique. As a result, the sensitivity of the circuit to G x decreases significantly (a factor higher than ten), but not completely due to the input capacitances of the port pins of the microcontroller. Experimental results show a relative error in the capacitance measurement below 1% for G x x ) shows the effectiveness of the circuit

  10. CODA : Compact front-end analog ASIC for silicon detectors

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sardesai, S.V.; Kataria, S.K.

    2004-01-01

    The paper presents the design of a front-end signal processing ASIC to be used with Silicon detectors having full depletion capacitance up to 40 pf. The ASIC channel consists of a charge amplifier, a shaper amplifier (CR-RC 3 ) and a comparator. There is provision for changing gain and polarity. The circuit has an estimated power dissipation of 16 mw. The ASIC is fabricated in 1.2 um CMOS technology. The 0pf noise is ∼400e. The chip has an area of 3 by 4 mm is packaged in 48 pin CLCC and COB option (Chip on Board). (author)

  11. Studies of frequency dependent C-V characteristics of neutron irradiated p+-n silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.

    1990-10-01

    Frequency-dependent capacitance-voltage fluence (C-V) characteristics of neutron irradiated high resistivity silicon p + -n detectors have been observed up to a fluence of 8.0 x 10 12 n/cm 2 . It has been found that frequency dependence of the deviation of the C-V characteristic (from its normal V -1/2 dependence), is strongly dependent on the ratio of the defect density and the effective doping density N t /N' d . As the defect density approaches the effective dopant density, or N t /N' d → 1, the junction capacitance eventually assumes the value of the detector geometry capacitance at high frequencies (f ≤ 10 5 Hz), independent of voltage. A two-trap-level model using the concept of quasi-fermi levels has been developed, which predicts both the effects of C-V frequency dependence and dopant compensation observed in this study

  12. Intrinsic Low Hysteresis Touch Mode Capacitive Pressure Sensor

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Pedersen, Thomas; Hansen, Ole

    2011-01-01

    Hysteresis has always been one of the main concerns when fabricating touch mode capacitive pressure sensors (TMCPS). This phenomenon can be fought at two different levels: during fabrication or after fabrication with the aid of a dedicated signal conditioning circuit. We will describe...... a microfabrication step that can be introduced in order to reduce drastically the hysteresis of this type of sensors without compromising their sensitivity. Medium-high range (0 to 10 bar absolute pressure) TMCPS with a capacitive signal span of over 100pF and less than 1 % hysteresis in the entire pressure range...

  13. [Impact of sperm capacitation on various populations of human spermatozoa].

    Science.gov (United States)

    Villanueva Díaz, C; Suárez Juárez, M; Díaz, M A; Ayala Ruiz, A

    1989-02-01

    With the purpose of evaluating the impact of spermatic capacitation on different spermatozooa populations, 49 samples of semen, before and after in vitro spermatic capacitation with Ham F-10 medium, were studied; motility of cells was evaluated according to WHO criteria. There was diminution of percentage of immobile cells, 27.8 to 20.0, as well as increase in population of cells with more mobility, 28.6% to 39.1%. Both difference were statistically significant (p = less than 0.05 and p = less than 0.005, respectively). These data suggest that spermatic capacitacion activates "in cascade" all groups of gametes.

  14. Stray capacitances in the watt balance operation: electrostatic forces

    DEFF Research Database (Denmark)

    Quagliotti, Danilo; Mana, G.

    2014-01-01

    In a watt balance, stray capacitances exist between the coil and the magnet. Since the electric current flowing in the coil creates a difference in electric potentials between the coil and magnet, their electrostatic interactions must be taken into account. This paper reports the results of a fin......In a watt balance, stray capacitances exist between the coil and the magnet. Since the electric current flowing in the coil creates a difference in electric potentials between the coil and magnet, their electrostatic interactions must be taken into account. This paper reports the results...

  15. A Multifunction Low-Power Preamplifier for MEMS Capacitive Microphones

    DEFF Research Database (Denmark)

    Jawed, Syed Arsalan; Nielsen, Jannik Hammel; Gottardi, Massimo

    2009-01-01

    A multi-function two-stage chopper-stabilized preamplifier (PAMP) for MEMS capacitive microphones (MCM) is presented. The PAMP integrates digitally controllable gain, high-pass filtering and offset control, adding flexibility to the front-end readout of MCMs. The first stage of the PAMP consists...... of a source-follower (SF) while the second-stage is a capacitive gain stage. The second-stage employs chopper-stabilization (CHS), while SF buffer shields the MCM sensor from the switching spurs. The PAMP uses M poly bias resistors for the second-stage, exploiting Miller effect to achieve flat audio...

  16. A multichannel portable ECG system with capacitive sensors

    International Nuclear Information System (INIS)

    Oehler, M; Schilling, M; Ling, V; Melhorn, K

    2008-01-01

    Capacitive sensors can be employed for measuring the electrocardiogram of a human heart without electric contact with the skin. This configuration avoids contact problems experienced by conventional electrocardiography. In our studies, we integrated these capacitive electrocardiogram electrodes in a 15-sensor array and combined this array with a tablet personal computer. By placing the system on the patient's body, we can measure a 15-channel electrocardiogram even through clothes and without any preparation. The goal of this development is to provide a new diagnostic tool that offers the user a reproducible, easy access to a fast and spatially resolved diagnostic 'heart view'

  17. Development of Image Reconstruction Algorithms in electrical Capacitance Tomography

    International Nuclear Information System (INIS)

    Fernandez Marron, J. L.; Alberdi Primicia, J.; Barcala Riveira, J. M.

    2007-01-01

    The Electrical Capacitance Tomography (ECT) has not obtained a good development in order to be used at industrial level. That is due first to difficulties in the measurement of very little capacitances (in the range of femto farads) and second to the problem of reconstruction on- line of the images. This problem is due also to the small numbers of electrodes (maximum 16), that made the usual algorithms of reconstruction has many errors. In this work it is described a new purely geometrical method that could be used for this purpose. (Author) 4 refs

  18. Considerations on the design of front-end electronics for silicon calorimetry for the SSC

    International Nuclear Information System (INIS)

    Wintenberg, A.L.; Bauer, M.L.; Britton, C.L.; Kennedy, E.J.; Todd, R.A.; Berridge, S.C.; Bugg, W.M.

    1990-01-01

    Some considerations are described for the design of a silicon-based sampling calorimetry detector for the Superconducting Super Collider (SSC). The use of silicon as the detection medium allows fast, accurate, and fine-grained energy measurements - but for optimal performance, the front-end electronics must be matched to the detector characteristics and have the speed required by the high SSC interaction rates. The relation between the signal-to-noise rtio of the calorimeter electronics and the charge collection time, the preamplifier power dissipation, detector capacitance and leakage, charge gain, and signal shaping and sampling was studied. The electrostatic transformer connection was analyzed and found to be unusable for a tightly arranged calorimeter because of stray capacitance effects. The method of deconvolutional sampling was developed as a means for pileup correction following synchronous sampling and analog storage

  19. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  20. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  1. Investigation of the impact of mechanical stress on the properties of silicon strip sensors

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2017-01-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. The strip sensor module consists of silicon sensors, boards and readout chips. Adhesives are used to connect the modular components thermally and mechanically. It was shown that the silicon sensor is exposed to mechanical stress, due to temperature difference between construction and operation. Mechanical stress can damage the sensor and can change the electrical properties. The thermal induced tensile stress near to the surface of a silicon sensor in a module was simulated and the results are compared to a cooled module. A four point bending setup was used to measure the maximum tensile stress of silicon detectors and to verify the piezoresistive effects on two recent development sensor types used in ATLAS (ATLAS07 and ATLAS12). Changes in the interstrip, bulk and bias resistance and capacitance as well as the coupling capacitance and the implant resistance were measured. The Leakage current was observed to decreas...

  2. Electrical behaviour of a silicone elastomer under simulated space environment

    International Nuclear Information System (INIS)

    Roggero, A; Dantras, E; Paulmier, T; Rejsek-Riba, V; Tonon, C; Dagras, S; Balcon, N; Payan, D

    2015-01-01

    The electrical behavior of a space-used silicone elastomer was characterized using surface potential decay and dynamic dielectric spectroscopy techniques. In both cases, the dielectric manifestation of the glass transition (dipole orientation) and a charge transport phenomenon were observed. An unexpected linear increase of the surface potential with temperature was observed around T g in thermally-stimulated potential decay experiments, due to molecular mobility limiting dipolar orientation in one hand, and 3D thermal expansion reducing the materials capacitance in the other hand. At higher temperatures, the charge transport process, believed to be thermally activated electron hopping with an activation energy of about 0.4 eV, was studied with and without the silica and iron oxide fillers present in the commercial material. These fillers were found to play a preponderant role in the low-frequency electrical conductivity of this silicone elastomer, probably through a Maxwell–Wagner–Sillars relaxation phenomenon. (paper)

  3. Novel photodefined polymer-embedded vias for silicon interposers

    International Nuclear Information System (INIS)

    Thadesar, Paragkumar A; Bakir, Muhannad S

    2013-01-01

    This paper describes the fabrication and characterization of novel photodefined polymer-embedded vias for silicon interposers. The fabricated polymer-embedded vias can help obtain ∼3.8× reduction in via-to-via capacitance as well as a reduction in insertion loss compared to TSVs with a silicon dioxide liner. Polymer-embedded vias 100 μm in diameter, 270 μm tall and at 250 μm pitch were fabricated. Resistance and leakage measurements were performed for the fabricated polymer-embedded vias. The average value of the measured resistance for 20 polymer-embedded vias is 2.54 mΩ and the maximum measured via-to-via leakage current for 10 pairs of polymer-embedded vias is 80.8 pA for an applied voltage of 200 V. (paper)

  4. The silicon vertex detector of the Belle II experiment

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Universitá di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); Bozek, A. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); and others

    2016-07-11

    The silicon vertex detector of the Belle II experiment, structured in a lantern shape, consists of four layers of ladders, fabricated from two to five silicon sensors. The APV25 readout ASIC chips are mounted on one side of the ladder to minimize the signal path for reducing the capacitive noise; signals from the sensor backside are transmitted to the chip by bent flexible fan-out circuits. The ladder is assembled using several dedicated jigs. Sensor motion on the jig is minimized by vacuum chucking. The gluing procedure provides such a rigid foundation that later leads to the desired wire bonding performance. The full ladder with electrically functional sensors is consistently completed with a fully developed assembly procedure, and its sensor offsets from the design values are found to be less than 200 μm. The potential functionality of the ladder is also demonstrated by the radioactive source test.

  5. Integrated Circuit Interconnect Lines on Lossy Silicon Substrate with Finite Element Method

    OpenAIRE

    Sarhan M. Musa,; Matthew N. O. Sadiku

    2014-01-01

    The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled in...

  6. Comparative study of mean value of 111 and mean value of 100 crystals and capacitance measurements on Si strip detectors in CSM

    International Nuclear Information System (INIS)

    Albergo, S.

    1999-01-01

    For the construction of the silicon microstrip detectors for the tracker of CMS experiment, two different substrate choices were investigated. A high-resistivity substrate with mean value of 111 crystal orientation and a low-resistivity one with mean value of 100 Dirac ket vector crystal orientation. The interstrip and backplane capacitances were measured before and after the exposure to radiation in a range of strip pitches from 60 μm to 240 μm and for values of the width-pitch ratio between 0.1 and 0.5

  7. Comparison of neutron scattering and DFM capacitance instruments ...

    African Journals Online (AJOL)

    Soil water evaporation is an important parameter that needs to be accurately measured for the design of water-efficient agricultural systems. With this study, the abilities of the DFM capacitance probes and a neutron water meter (NWM) to measure evaporation from the soil surface were compared. Measured evaporation was ...

  8. CAPACITANCE OF SUPERCAPACITORS WITH ELECTRODES BASED ON CARBON NANOCOMPOSITE MATERIAL

    OpenAIRE

    S.L Revo; B.I Rachiy; S Hamamda; T.G Avramenko; K.O Ivanenko

    2012-01-01

    This work presents the results of our research of the structure and practically important characteristics of a nanocomposite material on the basis of nanoporous carbon and thermally exfoliated graphite. This work shows that the use of the abovementioned composition in electrodes for supercapacitors allows to attain the level of their specific electrical capacitance at (155...160) F/g.

  9. Novel rf power sensor based on capacitive MEMS technology

    NARCIS (Netherlands)

    Fernandez, L.J.; Visser, Eelke; Sesé, J.; Jansen, Henricus V.; Wiegerink, Remco J.; Flokstra, Jakob

    2003-01-01

    We present the theory, design, fabrication of and first measurements on a novel power for radio frequency (rf) signals, based on capacitive measurements. The novelty of this sensor is thtat it measures the force that is created between the rf signal and a grounded membrande suspended above the line

  10. Lightweight linear alternators with and without capacitive tuning

    Science.gov (United States)

    Niedra, Janis M.

    1993-06-01

    Permanent magnet excited linear alternators rated tens of kW and coupled to free-piston Stirling engines are presently viewed as promising candidates for long term generation of electric power in both space and terrestrial applications. Series capacitive cancellation of the internal inductive reactance of such alternators was considered a viable way to both increase power extraction and to suppress unstable modes of the thermodynamic oscillation. Idealized toroidal and cylindrical alternator geometries are used for a comparative study of the issues of specific mass and capacitive tuning, subject to stability criteria. The analysis shows that the stator mass of an alternator designed to be capacitively tuned is always greater than the minimum achievable stator mass of an alternator designed with no capacitors, assuming equal utilization of materials ratings and the same frequency and power to a resistive load. This conclusion is not substantially altered when the usually lesser masses of the magnets and of any capacitors are added. Within the reported stability requirements and under circumstances of normal materials ratings, this study finds no clear advantage to capacitive tuning. Comparative plots of the various constituent masses are presented versus the internal power factor taken as a design degree of freedom. The explicit formulas developed for stator core, coil, capacitor, and magnet masses and for the degree of magnet utilization provide useful estimates of scaling effects.

  11. An integrated energy-efficient capacitive sensor digital interface circuit

    KAUST Repository

    Omran, Hesham

    2014-06-19

    In this paper, we propose an energy-efficient 13-bit capacitive sensor interface circuit. The proposed design fully relies on successive approximation algorithm, which eliminates the need for oversampling and digital decimation filtering, and thus low-power consumption is achieved. The proposed architecture employs a charge amplifier stage to acheive parasitic insensitive operation and fine absolute resolution. Moreover, the output code is not affected by offset voltages or charge injection. The successive approximation algorithm is implemented in the capacitance-domain using a coarse-fine programmable capacitor array, which allows digitizing wide capacitance range in compact area. Analysis for the maximum achievable resolution due to mismatch is provided. The proposed design is insensitive to any reference voltage or current which translates to low temperature sensitivity. The operation of a prototype fabricated in a standard CMOS technology is experimentally verified using both on-chip and off-chip capacitive sensors. Compared to similar prior work, the fabricated prototype achieves and excellent energy efficiency of 34 pJ/step.

  12. Calibration of capacitance probe sensors using Electric Circuit Theory

    NARCIS (Netherlands)

    Kelleners, T.J.; Soppe, R.W.O.; Robinson, D.A.; Schaap, M.G.; Ayars, J.E.; Skaggs, T.H.

    2004-01-01

    Capacitance probe sensors are an attractive electromagnetic technique for estimating soil water content. There is concern, however, about the influence of soil salinity and soil temperature on the sensors. We present an electric circuit model that relates the sensor frequency to the permittivity of

  13. Simulation and optimization of a dc SQUID with finite capacitance

    Energy Technology Data Exchange (ETDEWEB)

    de Waal, V.J.; Schrijner, P.; Llurba, R.

    1984-02-01

    This paper deals with the calculations of the noise an the optimization of the energy resolution of a dc SQUID with finite junction capacitance. Up to now noise calculations of dc SQUIDs were performed using a model without parasitic capacitances across the Josephson junctions. As the capacitances limit the performance of the SQUID, for a good optimization one must take them into account. The model consists of two coupled nonlinear second-order differential equations. The equations are very suitable for simulation with an analog circuit. We implemented the model on a hybrid computer. The noise spectrum from the model is calculated with a fast Fourier transform. A calculation of the energy resolution for one set of parameters takes about 6 min of computer time. Detailed results of the optimization are given for products of inductance and temperature of LT = 1.2 and 5 nHK. Within a range of ..beta.. and ..beta../sub c/ between 1 and 2, which is optimum, the energy resolution is nearly independent of these variables. In this region the energy resolution is near the value calculated without parasitic capacitances. Results of the optimized energy resolution are given as a function of LT between 1.2 and 10 nHK.

  14. Simulation and optimization of a dc SQUID with finite capacitance

    Science.gov (United States)

    de Waal, V. J.; Schrijner, P.; Llurba, R.

    1984-02-01

    This paper deals with the calculations of the noise and the optimization of the energy resolution of a dc SQUID with finite junction capacitance. Up to now noise calculations of dc SQUIDs were performed using a model without parasitic capacitances across the Josephson junctions. As the capacitances limit the performance of the SQUID, for a good optimization one must take them into account. The model consists of two coupled nonlinear second-order differential equations. The equations are very suitable for simulation with an analog circuit. We implemented the model on a hybrid computer. The noise spectrum from the model is calculated with a fast Fourier transform. A calculation of the energy resolution for one set of parameters takes about 6 min of computer time. Detailed results of the optimization are given for products of inductance and temperature of LT=1.2 and 5 nH K. Within a range of β and β c between 1 and 2, which is optimum, the energy resolution is nearly independent of these variables. In this region the energy resolution is near the value calculated without parasitic capacitances. Results of the optimized energy resolution are given as a function of LT between 1.2 and 10 mH K.

  15. Conjugate Image Theory Applied on Capacitive Wireless Power Transfer

    Directory of Open Access Journals (Sweden)

    Ben Minnaert

    2017-01-01

    Full Text Available Wireless power transfer using a magnetic field through inductive coupling is steadily entering the market in a broad range of applications. However, for certain applications, capacitive wireless power transfer using electric coupling might be preferable. In order to obtain a maximum power transfer efficiency, an optimal compensation network must be designed at the input and output ports of the capacitive wireless link. In this work, the conjugate image theory is applied to determine this optimal network as a function of the characteristics of the capacitive wireless link, as well for the series as for the parallel topology. The results are compared with the inductive power transfer system. Introduction of a new concept, the coupling function, enables the description of the compensation network of both an inductive and a capacitive system in two elegant equations, valid for the series and the parallel topology. This approach allows better understanding of the fundamentals of the wireless power transfer link, necessary for the design of an efficient system.

  16. Capacitive technology for energy extraction from chemical potential differences

    NARCIS (Netherlands)

    Bastos Sales, B.

    2013-01-01

    This thesis introduces the principle of Capacitive energy extraction based on Donnan Potential (CDP) to exploit salinity gradients. It also shows the fundamental characterization and improvements of CDP. An alternative application of this technology aimed at thermal gradients was tested.

  17. Resistance identification and rational process design in Capacitive Deionization

    NARCIS (Netherlands)

    Dykstra, Jouke; Zhao, R.; Biesheuvel, P.M.; Wal, van der A.

    2016-01-01

    Capacitive Deionization (CDI) is an electrochemical method for water desalination employing porous carbon electrodes. To enhance the performance of CDI, identification of electronic and ionic resistances in the CDI cell is important. In this work, we outline a method to identify these resistances.

  18. Carbon nanotube yarns as strong flexible conductive capacitive electrodes

    NARCIS (Netherlands)

    Liu, F.; Wagterveld, R.M.; Gebben, B.; Otto, M.J.; Biesheuvel, P.M.; Hamelers, H.V.M.

    2015-01-01

    Carbon nanotube (CNT) yarn, consisting of 23 µm diameter CNT filaments, can be used as capacitive electrodes that are long, flexible, conductive and strong, for applications in energy and electrochemical water treatment. We measure the charge storage capacity as function of salt concentration, and

  19. Microfluidic desalination : capacitive deionization on chip for microfluidic sample preparation

    NARCIS (Netherlands)

    Roelofs, Susan Helena

    2015-01-01

    The main aim of the work described in this thesis is to implement the desalination technique capacitive deionization (CDI) on a microfluidic chip to improve the reproducibility in the analysis of biological samples for drug development. Secondly, microfluidic CDI allows for the in situ study of ion

  20. Probing 2D black phosphorus by quantum capacitance measurements

    International Nuclear Information System (INIS)

    Kuiri, Manabendra; Kumar, Chandan; Chakraborty, Biswanath; Gupta, Satyendra N; Naik, Mit H; Jain, Manish; Sood, A K; Das, Anindya

    2015-01-01

    Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (∼six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements. (paper)

  1. Lumped thermal capacitance analysis of transient heat conduction ...

    African Journals Online (AJOL)

    Lumped thermal capacitance analysis has been undertaken to investigate the transient temperature variations, associated induced thermal stress distributions, and the structural integrity of Ghana Research Reactor-1 (GHAR R-1) vessel after 15 years of operation. The beltline configuration of the cylindrical vessel of the ...

  2. Energy consumption and constant current operation in membrane capacitive deionization

    NARCIS (Netherlands)

    Zhao, R.; Biesheuvel, P.M.; Wal, van der A.F.

    2012-01-01

    Membrane capacitive deionization (MCDI) is a water desalination technology based on applying a cell voltage between two oppositely placed porous electrodes sandwiching a spacer channel that transports the water to be desalinated. In the salt removal step, ions are adsorbed at the carbon–water

  3. A Micro Dynamically Tuned Gyroscope with Adjustable Static Capacitance

    Directory of Open Access Journals (Sweden)

    Lun Kong

    2013-02-01

    Full Text Available This paper presents a novel micro dynamically tuned gyroscope (MDTG with adjustable static capacitance. First, the principle of MDTG is theoretically analyzed. Next, some simulations under the optimized structure parameters are given as a reference for the mask design of the rotor wafer and electrode plates. As two key components, the process flows of the rotor wafer and electrode plates are described in detail. All the scanning electron microscopy (SEM photos show that the fabrication process is effective and optimized. Then, an assembly model is designed for the static capacitance adjustable MDTG, whose static capacitance can be changed by rotating the lower electrode plate support and substituting gasket rings of different thicknesses. Thus, the scale factor is easily changeable. Afterwards, the digitalized closed-loop measurement circuit is simulated. The discrete correction and decoupling modules are designed to make the closed-loop stable and cross-coupling effect small. The dual axis closed-loop system bandwidths can reach more than 60 Hz and the dual axis scale factors are completely symmetrical. All the simulation results demonstrate the proposed fabrication of the MDTG can meet the application requirements. Finally, the paper presents the test results of static and dynamic capacitance values which are consistent with the simulation values.

  4. Multilevel inverter based class D audio amplifier for capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    The reduced semiconductor voltage stress makes the multilevel inverters especially interesting, when driving capacitive transducers for audio applications. A ± 300 V flying capacitor class D audio amplifier driving a 100 nF load in the midrange region of 0.1-3.5 kHz with Total Harmonic Distortion...

  5. Production of pulsed electric fields using capacitively coupled electrodes

    Science.gov (United States)

    Kendall, B. R. F.; Schwab, F. A. S.

    1980-01-01

    It is shown that pulsed electric fields can be produced over extended volumes by taking advantage of the internal capacitances in a stacked array of electrodes. The design, construction, and performance of practical arrays are discussed. The prototype arrays involved fields of 100-1000 V/cm extending over several centimeters. Scaling to larger physical dimensions is straightforward.

  6. A capacitive device approach to gravitational wave detection

    International Nuclear Information System (INIS)

    Mours, B.; Yvert, M.

    1988-05-01

    The possible use of a capacitive device to detect gravitational waves is discussed. Special emphasis is put on the detection of permanent periodic sources. The intrinsic properties of such a method, its sensitivity, directionality and its wide frequency band, makes it a very appealing one

  7. Investigation of capacitance characteristics in metal/high-k

    Indian Academy of Sciences (India)

    Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

  8. Topology Optimization of Stressed Capacitive RF MEMS Switches

    DEFF Research Database (Denmark)

    Philippine, Mandy A.; Sigmund, Ole; Rebeiz, Gabriel M.

    2013-01-01

    Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-o...

  9. Concentration Fluctuations and Capacitive Response in Dense Ionic Solutions.

    Science.gov (United States)

    Uralcan, Betul; Aksay, Ilhan A; Debenedetti, Pablo G; Limmer, David T

    2016-07-07

    We use molecular dynamics simulations in a constant potential ensemble to study the effects of solution composition on the electrochemical response of a double layer capacitor. We find that the capacitance first increases with ion concentration following its expected ideal solution behavior but decreases upon approaching a pure ionic liquid in agreement with recent experimental observations. The nonmonotonic behavior of the capacitance as a function of ion concentration results from the competition between the independent motion of solvated ions in the dilute regime and solvation fluctuations in the concentrated regime. Mirroring the capacitance, we find that the characteristic decay length of charge density correlations away from the electrode is also nonmonotonic. The correlation length first decreases with ion concentration as a result of better electrostatic screening but increases with ion concentration as a result of enhanced steric interactions. When charge fluctuations induced by correlated ion-solvent fluctuations are large relative to those induced by the pure ionic liquid, such capacitive behavior is expected to be generic.

  10. Water Desalination Using Capacitive Deionization with Microporous Carbon Electrodes

    NARCIS (Netherlands)

    Porada, S.; Weinstein, L.; Dash, R.; Wal, van der A.F.; Bryjak, M.; Gogotsi, Y.; Biesheuvel, P.M.

    2012-01-01

    Capacitive deionization (CDI) is a water desalination technology in which salt ions are removed from brackish water by flowing through a spacer channel with porous electrodes on each side. Upon applying a voltage difference between the two electrodes, cations move to and are accumulated in

  11. The influence of fluorides on mouse sperm capacitation

    Czech Academy of Sciences Publication Activity Database

    Dvořáková-Hortová, K.; Šandera, M.; Jursová, M.; Vašínová, J.; Pěknicová, Jana

    2008-01-01

    Roč. 108, 1-2 (2008), s. 157-170 ISSN 0378-4320 R&D Projects: GA MŠk(CZ) 1M06011 Institutional research plan: CEZ:AV0Z50520701 Keywords : Mouse spermatozoa * Capacitation * Fluorides Subject RIV: DN - Health Impact of the Environment Quality Impact factor: 1.890, year: 2008

  12. The influence of fluorides on mouse sperm capacitation

    Czech Academy of Sciences Publication Activity Database

    Dvořáková-Hortová, K.; Šandera, M.; Jursová, M.; Vašinová, J.; Pěknicová, Jana

    2008-01-01

    Roč. 108, 1-2 (2008), s. 157-170 ISSN 0378-4320 R&D Projects: GA MŠk 1M06011 Institutional research plan: CEZ:AV0Z50520514; CEZ:AV0Z50520701 Keywords : mouse spermatozoa * capacitation * fluorides Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 1.890, year: 2008

  13. Rapid Prototyping of Tangibles with a Capacitive Mouse

    DEFF Research Database (Denmark)

    Ramos, Juan David Hincapie; Esbensen, Morten; Kogutowska, Magdalena

    2011-01-01

    lays the capacitive surface and communication capa- bilities of a Microsoft TouchMouse, both of which are ap- propriated to fulfill the mentined requirements. Unlike ex- isting approaches for rapid prototyping of tangibles like the Arduino boards, using the Toki toolkit does not require de- velopers...

  14. RF-MEMS capacitive switches with high reliability

    Science.gov (United States)

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  15. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  16. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  17. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  18. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  19. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  20. Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation

    NARCIS (Netherlands)

    Chen, J.-Z.; Darhuber, A.A.; Troian, S.M.; Wagner, S.

    2004-01-01

    The design and performance of a miniaturized coplanar capacitive sensor is presented whose electrode arrays can also function as resistive microheaters for thermocapillary actuation of liquid films and droplets. Optimal compromise between large capacitive signal and high spatial resolution is

  1. A Capacitance-Based Methodology for the Estimation of Piezoelectric Coefficients of Poled Piezoelectric Materials

    KAUST Repository

    Al Ahmad, Mahmoud; Alshareef, Husam N.

    2010-01-01

    A methodology is proposed to estimate the piezoelectric coefficients of bulk piezoelectric materials using simple capacitance measurements. The extracted values of d33 and d31 from the capacitance measurements were 506 pC/N and 247 p

  2. State of immune system of patients with infectious-allergic asthma subjected to transcerebral exposure to UHF electron field (27, 12 MHz)

    Energy Technology Data Exchange (ETDEWEB)

    Bogolyubov, V.M.; Malyavin, A.G.; Pershin, S.B.; Shubina, A.V.; Kubli, S.Kh.; Myshelova, K.P.

    An attempt was made to affect immunologic reactions in infectious-allergic asthma patients by subjecting them to transcerebral exposure to UHF electric field. Seventy-six patients, aged 23 to 69 years with varying duration of the disease, were studied. The treatment consisted of 25 exposures lasting from 5 to 15 min; a sham exposure was used on ten patients serving as controls. In all, 55/66 patients experienced clinical improvement lasting 6 to 12 months; only 2/10 control patients had any improvement. After the exposure, the level of T-lymphocytes increased along with blood histamine level; no significant changes were observed in case of B-lymphocytes. This immunologic correction was most effective in patients with atopy, with decreased levels of T-lymphocytes and elevated levels of B-lymphocytes. 12 references.

  3. Ionospheric modification induced by high-power HF transmitters: a potential for extended range VHF--UHF communications and plasma physics research

    International Nuclear Information System (INIS)

    Utlaut, W.F.

    1975-01-01

    When the ionized upper atmosphere of the earth is illuminated by high-power HF radio waves at appropriate frequencies, the temperature of electrons in the ionosphere can be raised substantially. In addition, radio waves with sufficient energy cause parametric instabilities that generate a spectrum of intense plasma waves. Observations of these phenomena have produced new understanding of plasma processes. One consequence of heating and plasma wave generation is that irregularities are formed in the electron distribution which are aligned with the earth's magnetic field. Because of this, a scatterer of large radar cross section is produced, which scatters HF through UHF communication signals over long distance paths, that would not otherwise be normally possible by ionospheric means. Results of radio, radar, communication, and photometric experiments that explored the characteristics of the volume of ionosphere which has been intentionally modified, temporarily, above facilities near Boulder (Platteville), Colo., and at Arecibo, Puerto Rico are summarized

  4. Brush-Painting and Photonic Sintering of Copper Oxide and Silver Inks on Wood and Cardboard Substrates to Form Antennas for UHF RFID Tags

    Directory of Open Access Journals (Sweden)

    Erja Sipilä

    2016-01-01

    Full Text Available Additive deposition of inks with metallic inclusions provides compelling means to embed electronics into versatile structures. The need to integrate electronics into environmentally friendly components and structures increases dramatically together with the increasing popularity of the Internet of Things. We demonstrate a novel brush-painting method for depositing copper oxide and silver inks directly on wood and cardboard substrates and discuss the optimization of the photonic sintering process parameters for both materials. The optimized parameters were utilized to manufacture passive ultra high frequency (UHF radio frequency identification (RFID tag antennas. The results from wireless testing show that the RFID tags based on the copper oxide and silver ink antennas on wood substrate are readable from ranges of 8.5 and 11 meters, respectively, and on cardboard substrate from read ranges of 8.5 and 12 meters, respectively. These results are well sufficient for many future wireless applications requiring remote identification with RFID.

  5. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  6. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  8. 3D printed biomimetic whisker-based sensor with co-planar capacitive sensing

    NARCIS (Netherlands)

    Delamare, John; Sanders, Remco G.P.; Krijnen, Gijsbertus J.M.

    2016-01-01

    This paper describes the development of a whisker sensor for tactile purposes and which is fabricated by 3D printing. Read-out consists of a capacitive measurement of a co-planar capacitance which is affected by a dielectric that is driven into the electric field of the capacitance. The current

  9. A branch-and-cut-and-price algorithm for the mixed capacitated general routing problem

    DEFF Research Database (Denmark)

    Bach, Lukas; Wøhlk, Sanne; Lysgaard, Jens

    2016-01-01

    In this paper, we consider the Mixed Capacitated General Routing Problem which is a combination of the Capacitated Vehicle Routing Problem and the Capacitated Arc Routing Problem. The problem is also known as the Node, Edge, and Arc Routing Problem. We propose a Branch-and-Cut-and-Price algorithm...

  10. Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

    Science.gov (United States)

    Quaranta, Fabio; Persano, Anna; Capoccia, Giovanni; Taurino, Antonietta; Cola, Adriano; Siciliano, Pietro; Lucibello, Andrea; Marcelli, Romolo; Proietti, Emanuela; Bagolini, Alvise; Margesin, Benno; Bellutti, Pierluigi; Iannacci, Jacopo

    2015-05-01

    Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

  11. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  12. Fabrication and Characterization of Capacitive Micromachined Ultrasonic Transducers with Low-Temperature Wafer Direct Bonding

    Directory of Open Access Journals (Sweden)

    Xiaoqing Wang

    2016-12-01

    Full Text Available This paper presents a fabrication method of capacitive micromachined ultrasonic transducers (CMUTs by wafer direct bonding, which utilizes both the wet chemical and O2plasma activation processes to decrease the bonding temperature to 400 °C. Two key surface properties, the contact angle and surface roughness, are studied in relation to the activation processes, respectively. By optimizing the surface activation parameters, a surface roughness of 0.274 nm and a contact angle of 0° are achieved. The infrared images and static deflection of devices are assessed to prove the good bonding effect. CMUTs having silicon membranes with a radius of 60 μm and a thickness of 2 μm are fabricated. Device properties have been characterized by electrical and acoustic measurements to verify their functionality and thus to validate this low-temperature process. A resonant frequency of 2.06 MHz is obtained by the frequency response measurements. The electrical insertion loss and acoustic signal have been evaluated. This study demonstrates that the CMUT devices can be fabricated by low-temperature wafer direct bonding, which makes it possible to integrate them directly on top of integrated circuit (IC substrates.

  13. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2015-11-01

    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  14. Study of the coastal atmospheric boundary layer during ESCOMPTE 2001. Evaluation and improvement of the efficiency of a UHF radar; Etude de la couche limite atmospherique cotiere durant ESCOMPTE 2001. Evaluation et amelioration des performances d'un radar UHF

    Energy Technology Data Exchange (ETDEWEB)

    Puygrenier, V.

    2005-12-15

    Forecasting of pollution events was the main objective of the ESCOMPTE-2001 campaign, which took place in the Marseille/Fos/Berre heterogeneous area (southeastern France) in the early summer 2001. This goal requires good understanding and taking into account, by physico-chemical numerical models, of the physical processes in the Atmospheric Boundary Layer (ABL), in which pollutants are emitted, transported and diffused. In the ESCOMPTE-2001 campaign context, this work was devoted to study the low troposphere during sea breeze events, related to meteorological conditions responsible for poor air quality of coastal areas. It presents notably an oscillation of the sea breeze intensity and competitions of locals and regional sea breeze, which change the advective time of the marine air above the continental surface and thus influence the ABL development and its pollutants concentration. This study is based principally on the network of four UHF wind profilers radars set up on the coastal area of Marseille/Fos/Berre, allowing a continuous three-dimensional description of the sea breeze flow and the ABL. For the needs of this phenomenological work, methodological developments was realized to improve the measurement of ABL turbulent properties with UHF radars (terms of turbulent kinetic energy budget) and the use of wind profilers network for the study of pollutants plumes trajectory-graphy. (author)

  15. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  16. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  17. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  18. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  19. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  20. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  1. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  2. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  3. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  4. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  5. Inverter-based successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham

    2017-03-23

    An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog- to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter- based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

  6. Surfactant free nickel sulphide nanoparticles for high capacitance supercapacitors

    Science.gov (United States)

    Nandhini, S.; Muralidharan, G.

    2018-04-01

    The surfactant free nickel sulphide nanoparticles were synthesized via facile hydrothermal method towards supercapacitor applications. The formation of crystalline spherical nanoparticles was confirmed through structural and morphological studies. Electrochemical behaviour of the electrode was analyzed using cyclic voltammetry (CV), galvanostatic charge-discharge studies (GCD) and electrochemical impedance spectroscopy (EIS). The CV studies imply that specific capacitance of the electrode arises from a combination of surface adsorption and Faradic reaction. The NiS electrode delivered a specific capacitance of about 529 F g-1 at a current density of 2 A g-1 (GCD measurements). A profitable charge transfer resistance of 0.5 Ω was obtained from EIS. The 100 % of capacity retention even after 2000 repeated charge-discharge cycles could be observed in 2 M KOH electrolyte at a much larger rate of 30 A g-1. The experimental results suggest that nickel sulphide is a potential candidate for supercapacitor applications.

  7. Two models of the capacitated vehicle routing problem

    Directory of Open Access Journals (Sweden)

    Zuzana Borčinova

    2017-01-01

    Full Text Available The aim of the Capacitated Vehicle Routing Problem (CVRP is to find a set of minimum total cost routes for a fleet of capacitated vehicles based at a single depot, to serve a set of customers. There exist various integer linear programming models of the CVRP. One of the main differences lies in the way to eliminate sub-tours, i.e. cycles that do not go through the depot. In this paper, we describe a well-known flow formulation of CVRP, where sub-tour elimination constraints have a cardinality exponentially growing with the number of customers. Then we present a mixed linear programming formulation with polynomial cardinality of sub-tour elimination constraints. Both of the models were implemented and compared on several benchmarks.

  8. Interface Layering Phenomena in Capacitance Detection of DNA with Biochips

    Directory of Open Access Journals (Sweden)

    Sandro Carrara

    2007-02-01

    Full Text Available Reliable DNA detection is of great importance for the development of the Lab-on-chip technology. The effort of the most recent projects on this field is to integrate all necessary operations, such as sample preparation (mixing, PCR amplification together with the sensor user for DNA detection. Among the different ways to sense the DNA hybridization, fluorescence based detection has been favored by the market. However, fluorescence based approaches require that the DNA targets are labeled by means of chromophores. As an alternative label-free DNA detection method, capacitance detection was recently proposed by different authors. While this effect has been successfully demonstrated by several groups, the model used for data analysis is far too simple to describe the real behavior of a DNA sensor. The aim of the present paper is to propose a different electrochemical model to describe DNA capacitance detection.

  9. A flexible capacitive tactile sensing array with floating electrodes

    International Nuclear Information System (INIS)

    Cheng, M-Y; Huang, X-H; Ma, C-W; Yang, Y-J

    2009-01-01

    In this work, we present the development of a capacitive tactile sensing array realized by using MEMS fabrication techniques and flexible printed circuit board (FPCB) technologies. The sensing array, which consists of two micromachined polydimethlysiloxane (PDMS) structures and a FPCB, will be used as the artificial skin for robot applications. Each capacitive sensing element comprises two sensing electrodes and a common floating electrode. The sensing electrodes and the metal interconnect for signal scanning are implemented on the FPCB, while the floating electrode is patterned on one of the PDMS structures. This special design can effectively reduce the complexity of the device structure and thus makes the device highly manufacturable. The characteristics of the devices with different dimensions are measured and discussed. The corresponding scanning circuits are also designed and implemented. The tactile images induced by the PMMA stamps of different shapes are also successfully captured by a fabricated 8 × 8 array

  10. High resolution capacitance detection circuit for rotor micro-gyroscope

    Directory of Open Access Journals (Sweden)

    Ming-Yuan Ren

    2014-03-01

    Full Text Available Conventional methods for rotor position detection of micro-gyroscopes include common exciting electrodes (single frequency and common sensing electrodes (frequency multiplex, but they have encountered some problems. So we present a high resolution and low noise pick-off circuit for micro-gyroscopes which utilizes the time multiplex method. The detecting circuit adopts a continuous-time current sensing circuit for capacitance measurement, and its noise analysis of the charge amplifier is introduced. The equivalent output noise power spectral density of phase-sensitive demodulation is 120 nV/Hz1/2. Tests revealed that the whole circuitry has a relative capacitance resolution of 1 × 10−8.

  11. Passive inference of collision frequency in magnetized capacitive argon discharge

    Science.gov (United States)

    Binwal, S.; Joshi, J. K.; Karkari, S. K.; Kaw, P. K.; Nair, L.

    2018-03-01

    A non-invasive method of determining the collision frequency νm by measuring the net plasma impendence in a magnetized, capacitive-coupled, radio-frequency (rf) discharge circuit is developed. The collision frequency has been analytically expressed in terms of bulk plasma reactance, wherein standard sheath models have been used to estimate the reactance offered due to the capacitive rf sheaths at the discharge plates. The experimental observations suggest that in the un-magnetized case, νm remains constant over a range of rf current but steadily increases as the background pressure reduces. In the magnetized case, the collision frequency has been observed to decay with the increase in rf current while it remains unaffected by the background pressure. A qualitative discussion has been presented to explain these characteristics.

  12. Mesoporous nanocrystalline film architecture for capacitive storage devices

    Science.gov (United States)

    Dunn, Bruce S.; Tolbert, Sarah H.; Wang, John; Brezesinski, Torsten; Gruner, George

    2017-05-16

    A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

  13. Investigation and Modeling of Capacitive Human Body Communication.

    Science.gov (United States)

    Zhu, Xiao-Qi; Guo, Yong-Xin; Wu, Wen

    2017-04-01

    This paper presents a systematic investigation of the capacitive human body communication (HBC). The measurement of HBC channels is performed using a novel battery-powered system to eliminate the effects of baluns, cables and instruments. To verify the measured results, a numerical model incorporating the entire HBC system is established. Besides, it is demonstrated that both the impedance and path gain bandwidths of HBC channels is affected by the electrode configuration. Based on the analysis of the simulated electric field distribution, an equivalent circuit model is proposed and the circuit parameters are extracted using the finite element method. The transmission capability along the human body is also studied. The simulated results using the numerical and circuit models coincide very well with the measurement, which demonstrates that the proposed circuit model can effectively interpret the operation mechanism of the capacitive HBC.

  14. Modified allocation capacitated planning model in blood supply chain management

    Science.gov (United States)

    Mansur, A.; Vanany, I.; Arvitrida, N. I.

    2018-04-01

    Blood supply chain management (BSCM) is a complex process management that involves many cooperating stakeholders. BSCM involves four echelon processes, which are blood collection or procurement, production, inventory, and distribution. This research develops an optimization model of blood distribution planning. The efficiency of decentralization and centralization policies in a blood distribution chain are compared, by optimizing the amount of blood delivered from a blood center to a blood bank. This model is developed based on allocation problem of capacitated planning model. At the first stage, the capacity and the cost of transportation are considered to create an initial capacitated planning model. Then, the inventory holding and shortage costs are added to the model. These additional parameters of inventory costs lead the model to be more realistic and accurate.

  15. Torque magnetometry by use of capacitance type transducer

    International Nuclear Information System (INIS)

    Braught, M.C.; Pechan, M.J.

    1992-01-01

    Interfacial anisotropy in magnetic multilayered samples comprised of nanometer thick magnetic layers alternating with non-magnetic layers is investigated by torque magnetometry in the temperature regime of 4 to 300K. The design, construction and use of a capacitance type transducer wherein the sample is mounted directly on with the plate of the capacitor, will be described. As a result the sample and transducer spatially coexist at the sample temperature in an applied external field, eliminating mechanical coupling from the cryogenic region to a remote room temperature transducer. The capacitor measuring the torque of the sample is paired with a reference capacitor. The difference between torque influenced capacitance and the reference is then determined by a differential transimpedance amplifier. Since both capacitors are physically identical variables such as temperature, vibration, orientation and external devices are minimized. Torques up to 300 dyne-cm can be measured with a sensitivity of 0.010 dyne-cm

  16. Vibration damping with negative capacitance shunts: theory and experiment

    International Nuclear Information System (INIS)

    De Marneffe, B; Preumont, A

    2008-01-01

    This paper analyzes in detail the enhancement of piezoelectric stack transducers by means of the well known 'negative' capacitive shunting. The stability is thoroughly studied: starting from the electrical admittance curve of the transducer, a method is introduced that quantifies the stability margins of the shunted structure. Two different implementations (series vs parallel) are investigated, and the lack of robustness of the parallel one is demonstrated. Next, this technique is experimentally applied on a truss structure. Its performances are compared with those of passive shunt circuits and with those of an active control law, the so-called Integral Force Feedback or IFF. As expected, the damping introduced by the negative capacitance shunt is larger than the damping obtained with the passive shunts; it remains, however, one order of magnitude smaller than that obtained with the IFF

  17. Origin of Negative Capacitance in Bipolar Organic Diodes

    Science.gov (United States)

    Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    2018-03-01

    Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

  18. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  19. On the hydrophilicity of electrodes for capacitive energy extraction

    International Nuclear Information System (INIS)

    Lian, Cheng; East China University of Science and Technology, Shanghai; Kong, Xian; Tsinghua University, Beijing; Liu, Honglai; Wu, Jianzhong

    2016-01-01

    The so-called Capmix technique for energy extraction is based on the cyclic expansion of electrical double layers to harvest dissipative energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the electrical potentials for the charging and discharging processes, which must be matched with the pore characteristics of the electrode materials. While a number of recent studies have examined the effects of the electrode pore size and geometry on the capacitive energy extraction processes, there is little knowledge on how the surface properties of the electrodes affect the thermodynamic efficiency. In this paper, we investigate the Capmix processes using the classical density functional theory for a realistic model of electrolyte solutions. The theoretical predictions allow us to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different surface hydrophobicity. Finally, in agreement with recent experiments, we find that the thermodynamic efficiency can be much improved by using most hydrophilic electrodes.

  20. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  1. Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

    International Nuclear Information System (INIS)

    Wang Hongyu; Sun Peng; Zhao Shuangyun; Li Yang; Jiang Wei

    2016-01-01

    We analyzed perpendicularly configured dual-frequency (DF) capacitively coupled plasmas (CCP). In this configuration, two pairs of electrodes are arranged oppositely, and the discharging is perpendicularly driven by two radio frequency (RF) sources. Particle-in-cell/Monte Carlo (PIC/MC) simulation showed that the configuration had some advantages as this configuration eliminated some dual frequency coupling effects. Some variation and potential application of the discharging configuration is discussed briefly. (paper)

  2. Effect of estrogens on boar sperm capacitation in vitro

    Czech Academy of Sciences Publication Activity Database

    Děd, Lukáš; Dostálová, Pavla; Dorosh, Andriy; Dvořáková-Hortová, K.; Pěknicová, Jana

    2010-01-01

    Roč. 8, - (2010), --- ISSN 1477-7827 R&D Projects: GA MŠk(CZ) 1M06011; GA ČR(CZ) GD523/08/H064; GA ČR(CZ) GA523/09/1793 Institutional research plan: CEZ:AV0Z50520701 Keywords : capacitation * acrosome reaction * monoclonal antibody * estrogen * flow cytometry Subject RIV: EI - Biotechnology ; Bionics Impact factor: 1.695, year: 2010

  3. Low Humidity Characteristics of Polymer-Based Capacitive Humidity Sensors

    OpenAIRE

    Majewski Jacek

    2017-01-01

    Polymer-based capacitive humidity sensors emerged around 40 years ago; nevertheless, they currently constitute large part of sensors’ market within a range of medium (climatic and industrial) humidity 20−80%RH due to their linearity, stability and cost-effectiveness. However, for low humidity values (0−20%RH) that type of sensor exhibits increasingly nonlinear characteristics with decreasing of humidity values. This paper presents the results of some experimental trials of CMOS polymer-based ...

  4. Capacitive short circuit detection in transformer core laminations

    International Nuclear Information System (INIS)

    Schulz, Carl A.; Duchesne, Stephane; Roger, Daniel; Vincent, Jean-Noel

    2008-01-01

    A capacitive measurement procedure is proposed that serves to detect burr-induced short circuits in transformer core laminations. The tests are conducted on stacks of transformer steel sheets as used for transformer core production and yield a short-circuit probability indicative of the additional eddy current losses to be expected. Applied during the assembly of transformer cores, the measurements can help to decide whether the burr treatment process is working efficiently or has to be readjusted

  5. Discontinuity of capacitance at the onset of surface superconductivity

    Czech Academy of Sciences Publication Activity Database

    Morawetz, K.; Lipavský, Pavel; Mareš, Jiří J.

    2009-01-01

    Roč. 11, č. 2 (2009), 023032/1-023032/8 ISSN 1367-2630 R&D Projects: GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040; GA AV ČR IAA100100712 Institutional research plan: CEZ:AV0Z10100521 Keywords : capacitance * surface supraconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.312, year: 2009

  6. Sensitivity limits of capacitive transducer for gravitational wave resonant antennas

    Energy Technology Data Exchange (ETDEWEB)

    Bassan, M; Pizzella, G [Rome Tor Vergata Univ. (Italy). Dip. di Fisica

    1996-12-01

    It is analyzed the performance of a resonant gravitational wave antenna equipped with a resonant, d.c. biased capacitive transducer, an untuned superconducting matching circuit and a d.c. Squid. It is derived simple relations for the detector energy sensitivity that serve as guidelines for device development and it is shown that, with reasonable improvements in Squid technology, an effective temperature for burst detection of 2miK can be achieved.

  7. Capacitive Sensors for Feedback Control of Microfluidic Devices

    Science.gov (United States)

    Chen, J. Z.; Darhuber, A. A.; Troian, S. M.; Wagner, S.

    2003-11-01

    Automation of microfluidic devices based on thermocapillary flow [1] requires feedback control and detection techniques for monitoring the location, and ideally also composition and volume of liquid droplets. For this purpose we have developed a co-planar capacitance technique with a sensitivity of 0.07 pF at a frequency of 370 kHz. The variation in capacitance due to the presence of a droplet is monitored by the output frequency of an RC relaxation oscillator consisting of two inverters, one resistor and one capacitor. We discuss the performance of this coplanar sensor as a function of the electrode dimensions and geometry. These geometric variables determine the electric field penetration depth within the liquid, which in our studies ranged from 30 to 450 microns. Numerical solutions for the capacitance corresponding to the exact fabricated geometry agree very well with experimental data. An approximate analytic solution, which ignores fringe field effects, provides a simple but excellent guide for design development. [1] A. A. Darhuber et al., Appl. Phys. Lett. 82, 657 (2003).

  8. Some applications of capacitance technology in nuclear reactor components inspections

    International Nuclear Information System (INIS)

    Walton, H.

    1985-01-01

    The paper considers application of a capacitance measuring system that has overcome many of the original contraints, such as sensitivity to cable length, induced electric field and high acoustic noise, and illustrates the ease of use with examples of proven capability in severe environments of high temperature or high radiation. The Capacitance Displacement Transducer (CDT) measuring principle was originally developed as a working technique during the early years of full-scale, on-load refuelling trials performed in the Windscale Civil Advanced Gas-Cooled Reactor (CAGR) test rig where it was necessary to measure the vibrational behaviour of fuel components in simulated reactor conditions. At that time, 1968-1969, no instrumentation existed that would measure displacement in the range 0 to 100 mms to an accuracy of 25x10 -3 mms, without physical contact, at temperatures of 600 0 C in high velocity gas, in high acoustic noise fields of 150 db's over cable lengths approaching 100 metres. The principles incorporated in the CDT overcome all these problems. The advantages inherent in this system have been extended to metrology applications in more recent years by the further development of the electronics to enable linear displacement measurement to be obtained between two capacitance plates whose separation varies, either by plate movement or by surface irregularity. This principle has been used to good effect in novel applications associated with the inspection of nominally inaccessible internal tube surfaces

  9. Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

    Directory of Open Access Journals (Sweden)

    Aiping Zeng

    2017-01-01

    Full Text Available The plasma treatment on commercial active carbon (AC was carried out in a capacitively coupled plasma system using Ar + 10% O2 at pressure of 4.0 Torr. The RF plasma power ranged from 50 W to 100 W and the processing time was 10 min. The carbon film electrode was fabricated by electrophoretic deposition. Micro-Raman spectroscopy revealed the highly increased disorder of sp2 C lattice for the AC treated at 75 W. An electrosorption capacity of 6.15 mg/g was recorded for the carbon treated at 75 W in a 0.1 mM NaCl solution when 1.5 V was applied for 5 hours, while the capacity of the untreated AC was 1.01 mg/g. The plasma treatment led to 5.09 times increase in the absorption capacity. The jump of electrosorption capacity by plasma treatment was consistent with the Raman spectra and electrochemical double layer capacitance. This work demonstrated that plasma treatment was a potentially efficient approach to activating biochar to serve as electrode material for capacitive deionization (CDI.

  10. Capacitive properties of polypyrrole/activated carbon composite

    Directory of Open Access Journals (Sweden)

    Porjazoska-Kujundziski Aleksandra

    2014-01-01

    Full Text Available Electrochemical synthesis of polypyrrole (PPy and polypyrrole / activated carbon (PPy / AC - composite films, with a thickness between 0.5 and 15 μm were performed in a three electrode cell containing 0.1 mol dm-3 Py, 0.5 mol dm-3 NaClO4 dissolved in ACN, and dispersed particles of AC (30 g dm-3. Electrochemical characterization of PPy and PPy / AC composites was performed using cyclic voltammetry (CV and electrochemical impedance spectroscopy (EIS techniques. The linear dependences of the capacitance (qC, redox capacitance (qred, and limiting capacitance (CL of PPy and PPy / AC - composite films on their thickness (L, obtained by electrochemical and impedance analysis, indicate a nearly homogeneous distribution of the incorporated AC particles in the composite films (correlation coefficient between 0.991 and 0.998. The significant enhancement of qC, qred, and CL, was observed for composite films (for ∼40 ± 5% in respect to that of the “pure” PPy. The decreased values of a volume resistivity in the reduced state of the composite film, ρ = 1.3 ⋅ 106 Ω cm (for L = 7.5 μm, for two orders of magnitude, compared to that of PPy - film with the same thickness, ρ ∼ 108 Ω cm, was also noticed.

  11. DNA Nucleotides Detection via capacitance properties of Graphene

    Science.gov (United States)

    Khadempar, Nahid; Berahman, Masoud; Yazdanpanah, Arash

    2016-05-01

    In the present paper a new method is suggested to detect the DNA nucleotides on a first-principles calculation of the electronic features of DNA bases which chemisorbed to a graphene sheet placed between two gold electrodes in a contact-channel-contact system. The capacitance properties of graphene in the channel are surveyed using non-equilibrium Green's function coupled with the Density Functional Theory. Thus, the capacitance properties of graphene are theoretically investigated in a biological environment, and, using a novel method, the effect of the chemisorbed DNA nucleotides on electrical charges on the surface of graphene is deciphered. Several parameters in this method are also extracted including Electrostatic energy, Induced density, induced electrostatic potential, Electron difference potential and Electron difference density. The qualitative and quantitative differences among these parameters can be used to identify DNA nucleotides. Some of the advantages of this approach include its ease and high accuracy. What distinguishes the current research is that it is the first experiment to investigate the capacitance properties of gaphene changes in the biological environment and the effect of chemisorbed DNA nucleotides on the surface of graphene on the charge.

  12. Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

    Science.gov (United States)

    Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

    2017-08-16

    The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

  13. CMOS based capacitance to digital converter circuit for MEMS sensor

    Science.gov (United States)

    Rotake, D. R.; Darji, A. D.

    2018-02-01

    Most of the MEMS cantilever based system required costly instruments for characterization, processing and also has large experimental setups which led to non-portable device. So there is a need of low cost, highly sensitive, high speed and portable digital system. The proposed Capacitance to Digital Converter (CDC) interfacing circuit converts capacitance to digital domain which can be easily processed. Recent demand microcantilever deflection is part per trillion ranges which change the capacitance in 1-10 femto farad (fF) range. The entire CDC circuit is designed using CMOS 250nm technology. Design of CDC circuit consists of a D-latch and two oscillators, namely Sensor controlled oscillator (SCO) and digitally controlled oscillator (DCO). The D-latch is designed using transmission gate based MUX for power optimization. A CDC design of 7-stage, 9-stage and 11-stage tested for 1-18 fF and simulated using mentor graphics Eldo tool with parasitic. Since the proposed design does not use resistance component, the total power dissipation is reduced to 2.3621 mW for CDC designed using 9-stage SCO and DCO.

  14. Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

    International Nuclear Information System (INIS)

    Fumagalli, L; Ferrari, G; Sampietro, M; Casuso, I; MartInez, E; Samitier, J; Gomila, G

    2006-01-01

    Nanoscale capacitance imaging with attofarad resolution (∼1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale

  15. Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, L [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Ferrari, G [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Sampietro, M [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Casuso, I [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); MartInez, E [Plataforma de Nanotecnologia, Parc Cientific de Barcelona, C/ Josep Samitier 1-5, 08028-Barcelona (Spain); Samitier, J [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); Gomila, G [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain)

    2006-09-28

    Nanoscale capacitance imaging with attofarad resolution ({approx}1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale.

  16. A reciprocity-based formula for the capacitance with quadrupolar electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Sungbo [Gachon University of Medicine and Science, Incheon (Korea, Republic of)

    2011-11-15

    A new capacitance formula for the practical design and characterization of quadrupolar electrode arrays with capacitive structures was derived based on the reciprocal theorem. The reciprocity-based capacitance formula agreed with the empirical equations established to estimate the capacitance of a single strip line or disk electrode compensating for the fringing field effect that occurs at the electrode edge. The reciprocity-based formula was applied to compute the capacitance measurable by using a quadrupolar square electrode array with a symmetric dipole-dipole configuration and was compared with the analytical equation established based on the image method assuming that the electrodes were points. The results showed that the capacitance of the quadrupolar electrodes was determined by the size of the quadrupolar electrodes relative to the separation distance between the electrodes and that the reciprocity-based capacitance formula was in agreement with the established analytical equation if the separated distance between the electrodes relative to the electrode size was large enough.

  17. A reciprocity-based formula for the capacitance with quadrupolar electrodes

    International Nuclear Information System (INIS)

    Cho, Sungbo

    2011-01-01

    A new capacitance formula for the practical design and characterization of quadrupolar electrode arrays with capacitive structures was derived based on the reciprocal theorem. The reciprocity-based capacitance formula agreed with the empirical equations established to estimate the capacitance of a single strip line or disk electrode compensating for the fringing field effect that occurs at the electrode edge. The reciprocity-based formula was applied to compute the capacitance measurable by using a quadrupolar square electrode array with a symmetric dipole-dipole configuration and was compared with the analytical equation established based on the image method assuming that the electrodes were points. The results showed that the capacitance of the quadrupolar electrodes was determined by the size of the quadrupolar electrodes relative to the separation distance between the electrodes and that the reciprocity-based capacitance formula was in agreement with the established analytical equation if the separated distance between the electrodes relative to the electrode size was large enough.

  18. Transparent Flexible Active Faraday Cage Enables In Vivo Capacitance Measurement in Assembled Microsensor.

    Science.gov (United States)

    Ahmadi, Mahdi; Rajamani, Rajesh; Sezen, Serdar

    2017-10-01

    Capacitive micro-sensors such as accelerometers, gyroscopes and pressure sensors are increasingly used in the modern electronic world. However, the in vivo use of capacitive sensing for measurement of pressure or other variables inside a human body suffers from significant errors due to stray capacitance. This paper proposes a solution consisting of a transparent thin flexible Faraday cage that surrounds the sensor. By supplying the active sensing voltage simultaneously to the deformable electrode of the capacitive sensor and to the Faraday cage, the stray capacitance during in vivo measurements can be largely eliminated. Due to the transparency of the Faraday cage, the top and bottom portions of a capacitive sensor can be accurately aligned and assembled together. Experimental results presented in the paper show that stray capacitance is reduced by a factor of 10 by the Faraday cage, when the sensor is subjected to a full immersion in water.

  19. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  20. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  1. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  2. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  3. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  4. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  5. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  6. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  7. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  8. Can root electrical capacitance be used to predict root mass in soil?

    Science.gov (United States)

    Dietrich, R C; Bengough, A G; Jones, H G; White, P J

    2013-07-01

    Electrical capacitance, measured between an electrode inserted at the base of a plant and an electrode in the rooting substrate, is often linearly correlated with root mass. Electrical capacitance has often been used as an assay for root mass, and is conventionally interpreted using an electrical model in which roots behave as cylindrical capacitors wired in parallel. Recent experiments in hydroponics show that this interpretation is incorrect and a new model has been proposed. Here, the new model is tested in solid substrates. The capacitances of compost and soil were determined as a function of water content, and the capacitances of cereal plants growing in sand or potting compost in the glasshouse, or in the field, were measured under contrasting irrigation regimes. Capacitances of compost and soil increased with increasing water content. At water contents approaching field capacity, compost and soil had capacitances at least an order of magnitude greater than those of plant tissues. For plants growing in solid substrates, wetting the substrate locally around the stem base was both necessary and sufficient to record maximum capacitance, which was correlated with stem cross-sectional area: capacitance of excised stem tissue equalled that of the plant in wet soil. Capacitance measured between two electrodes could be modelled as an electrical circuit in which component capacitors (plant tissue or rooting substrate) are wired in series. The results were consistent with the new physical interpretation of plant capacitance. Substrate capacitance and plant capacitance combine according to standard physical laws. For plants growing in wet substrate, the capacitance measured is largely determined by the tissue between the surface of the substrate and the electrode attached to the plant. Whilst the measured capacitance can, in some circumstances, be correlated with root mass, it is not a direct assay of root mass.

  9. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  10. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  11. Capacitance-voltage characterization of fully silicided gated MOS capacitor

    International Nuclear Information System (INIS)

    Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

    2009-01-01

    This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

  12. Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)

    International Nuclear Information System (INIS)

    Heo, Jinhee; Kim, Deoksu; Kim, Chung woo; Chung, Ilsub

    2005-01-01

    Continuous shrinkage in the memory devices demands further understanding about the doping concentration variations at shallow junction and channel region. Scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM) can provide reliable information about the electrical and physical junction structure simultaneously. In this work, we attempt to visualize the doping concentration variations of split-gate structure silicon-oxide-nitride-oxide-silicon (SONOS) transistor with thin oxide-nitride-oxide (ONO; 4/7/11 nm). From SCM image, we could identify the source and drain region, which have different doping concentrations from that at channel region. In addition, a gate oxide layer and a depletion region were also identified. Similar results were obtained using SSRM. However, SSRM shows a better resolution, in particular, for highly doped region. For this experiment, the cross-sectional sample has been prepared using focused ion beam (FIB) and hand-polishing method. The results show that SCM and SSRM are very useful methods to analyze the doping profile near the junction as well as the channel

  13. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  14. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  15. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  16. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  17. Obtaining and electrical characterization of silicone/barium titanate composite for variable capacitor applications; Obtencao e caracterizacao eletrica de composito silicone/titanato de bario para aplicacoes em capacitor variavel

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, D.A.; Souza, P.S.S.; Souza, C.P., E-mail: debora.vieira@cear.ufpb.br [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Centro de Energias Alternativas e Renovaveis. Departamento de Engenharia Eletrica; Menezes, P.C.F. [Universidade Federal de Campina Grande (UFCG), Campina Grande, PB (Brazil). Departamento de Engenharia de Materiais

    2014-07-01

    Silicone/barium titanate composites are excellent candidates for applications in the production of electronics components. In this work, silicone/barium titanate composite was obtained for the production of capacitors with variable dielectric distance. The mixture of composite (20% of barium titanate) was performed in a mixer with stem type propellers, at room temperature for 20 minutes. The cure was held in vacuum kiln. After obtaining the composite, was mounted a parallel plate capacitor, using composite as dielectric. The composite obtained was subjected to x-ray diffraction, scanning electron microscopy and capacitive electrical test. The DRX confirms the presence of ceramic charge in composite with the presence of broad peaks of barium titanate and micrographs show the barium titanate particles dispersed in polymer matrix. The capacitance of the sample was approximately 28,7pF. (author)

  18. Effect of Plasma Membrane Semipermeability in Making the Membrane Electric Double Layer Capacitances Significant.

    Science.gov (United States)

    Sinha, Shayandev; Sachar, Harnoor Singh; Das, Siddhartha

    2018-01-30

    Electric double layers (or EDLs) formed at the membrane-electrolyte interface (MEI) and membrane-cytosol interface (MCI) of a charged lipid bilayer plasma membrane develop finitely large capacitances. However, these EDL capacitances are often much larger than the intrinsic capacitance of the membrane, and all of these capacitances are in series. Consequently, the effect of these EDL capacitances in dictating the overall membrane-EDL effective capacitance C eff becomes negligible. In this paper, we challenge this conventional notion pertaining to the membrane-EDL capacitances. We demonstrate that, on the basis of the system parameters, the EDL capacitance for both the permeable and semipermeable membranes can be small enough to influence C eff . For the semipermeable membranes, however, this lowering of the EDL capacitance can be much larger, ensuring a reduction of C eff by more than 20-25%. Furthermore, for the semipermeable membranes, the reduction in C eff is witnessed over a much larger range of system parameters. We attribute such an occurrence to the highly nonintuitive electrostatic potential distribution associated with the recently discovered phenomena of charge-inversion-like electrostatics and the attainment of a positive zeta potential at the MCI for charged semipermeable membranes. We anticipate that our findings will impact the quantification and the identification of a large number of biophysical phenomena that are probed by measuring the plasma membrane capacitance.

  19. Percoll gradient-centrifuged capacitated mouse sperm have increased fertilizing ability and higher contents of sulfogalactosylglycerolipid and docosahexaenoic acid-containing phosphatidylcholine compared to washed capacitated mouse sperm.

    Science.gov (United States)

    Furimsky, Anna; Vuong, Ngoc; Xu, Hongbin; Kumarathasan, Premkumari; Xu, Min; Weerachatyanukul, Wattana; Bou Khalil, Maroun; Kates, Morris; Tanphaichitr, Nongnuj

    2005-03-01

    Although Percoll gradient centrifugation has been used routinely to prepare motile human sperm, its use in preparing motile mouse sperm has been limited. Here, we showed that Percoll gradient-centrifuged (PGC) capacitated mouse sperm had markedly higher fertilizing ability (sperm-zona pellucida [ZP] binding and in vitro fertilization) than washed capacitated mouse sperm. We also showed that the lipid profiles of PGC capacitated sperm and washed capacitated sperm differed significantly. The PGC sperm had much lower contents of cholesterol and phospholipids. This resulted in relative enrichment of male germ cell-specific sulfogalactosylglycerolipid (SGG), a ZP-binding ligand, in PGC capacitated sperm, and this would explain, in part, their increased ZP-binding ability compared with that of washed capacitated sperm. Analyses of phospholipid fatty acyl chains revealed that PGC capacitated sperm were enriched in phosphatidylcholine (PC) molecular species containing highly unsaturated fatty acids (HUFAs), with docosahexaenoic acid (DHA; C22: 6n-3) being the predominant HUFA (42% of total hydrocarbon chains of PC). In contrast, the level of PC-HUFAs comprising arachidonic acid (20:4n-6), docosapentaenoic acid (C22:5n-6), and DHA in washed capacitated sperm was only 27%. Having the highest unsaturation degree among all HUFAs in PC, DHA would enhance membrane fluidity to the uppermost. Therefore, membranes of PGC capacitated sperm would undergo fertilization-related fusion events at higher rates than washed capacitated sperm. These results suggested that PGC mouse sperm should be used in fertilization experiments and that SGG and DHA should be considered to be important biomarkers for sperm fertilizing ability.

  20. The Semen pH Affects Sperm Motility and Capacitation.

    Science.gov (United States)

    Zhou, Ji; Chen, Li; Li, Jie; Li, Hongjun; Hong, Zhiwei; Xie, Min; Chen, Shengrong; Yao, Bing

    2015-01-01

    As the chemical environment of semen can have a profound effect on sperm quality, we examined the effect of pH on the motility, viability and capacitation of human sperm. The sperm in this study was collected from healthy males to avoid interference from other factors. The spermatozoa cultured in sperm nutrition solution at pH 5.2, 6.2, 7.2 and 8.2 were analyzed for sperm total motility, progressive motility (PR), hypo-osmotic swelling (HOS) rate, and sperm penetration. Our results showed that these parameters were similar in pH 7.2 and 8.2 sperm nutrition solutions, but decreased in pH 5.2 and 6.2 solutions. The HOS rate exhibited positive correlation with the sperm total motility and PR. In addition, the sperm Na(+)/K(+)-ATPase activity at different pHs was measured, and the enzyme activity was significantly lower in pH 5.2 and 6.2 media, comparing with that in pH 8.2 and pH 7.2 solutions. Using flow cytometry (FCM) and laser confocal scanning microscopy (LCSM) analysis, the intracellular Ca2(+ )concentrations of sperm cultured in sperm capacitation solution at pH 5.2, 6.2, 7.2 and 8.2 were determined. Compared with that at pH 7.2, the mean fluorescence intensity of sperm in pH 5.2 and 6.2 media decreased significantly, while that of pH 8.2 group showed no difference. Our results suggested that the declined Na(+)/K(+)-ATPase activity at acidic pHs result in decreased sperm movement and capacitation, which could be one of the mechanisms of male infertility.