SOFIA OBSERVATIONS OF SN 2010jl: ANOTHER NON-DETECTION OF THE 9.7 μm SILICATE DUST FEATURE

International Nuclear Information System (INIS)

Williams, Brian J.; Fox, Ori D.

2015-01-01

We present photometric observations from the Stratospheric Observatory for Infrared Astronomy (SOFIA) at 11.1 μm of the Type IIn supernova (SN IIn) 2010jl. The SN is undetected by SOFIA, but the upper limits obtained, combined with new and archival detections from Spitzer at 3.6 and 4.5 μm, allow us to characterize the composition of the dust present. Dust in other SN IIn has been shown in previous works to reside in a circumstellar shell of material ejected by the progenitor system in the few millenia prior to explosion. Our model fits show that the dust in the system shows no evidence for the strong, ubiquitous 9.7 μm feature from silicate dust, suggesting the presence of carbonaceous grains. The observations are best fit with 0.01–0.05 M ⊙ of carbonaceous dust radiating at a temperature of ∼550–620 K. The dust composition may reveal clues concerning the nature of the progenitor system, which remains ambiguous for this subclass. Most of the single star progenitor systems proposed for SNe IIn, such as luminous blue variables, red supergiants, yellow hypergiants, and B[e] stars, all clearly show silicate dust in their pre-SN outflows. However, this post-SN result is consistent with the small sample of SNe IIn with mid-IR observations, none of which show signs of emission from silicate dust in their IR spectra

SOFIA OBSERVATIONS OF SN 2010jl: ANOTHER NON-DETECTION OF THE 9.7 μm SILICATE DUST FEATURE

Energy Technology Data Exchange (ETDEWEB)

Williams, Brian J. [CRESST and X-ray Astrophysics Laboratory, NASA/GSFC, Code 662, 8800 Greenbelt Road, Greenbelt, MD (United States); Fox, Ori D., E-mail: brian.j.williams@nasa.gov [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States)

2015-07-20

We present photometric observations from the Stratospheric Observatory for Infrared Astronomy (SOFIA) at 11.1 μm of the Type IIn supernova (SN IIn) 2010jl. The SN is undetected by SOFIA, but the upper limits obtained, combined with new and archival detections from Spitzer at 3.6 and 4.5 μm, allow us to characterize the composition of the dust present. Dust in other SN IIn has been shown in previous works to reside in a circumstellar shell of material ejected by the progenitor system in the few millenia prior to explosion. Our model fits show that the dust in the system shows no evidence for the strong, ubiquitous 9.7 μm feature from silicate dust, suggesting the presence of carbonaceous grains. The observations are best fit with 0.01–0.05 M{sub ⊙} of carbonaceous dust radiating at a temperature of ∼550–620 K. The dust composition may reveal clues concerning the nature of the progenitor system, which remains ambiguous for this subclass. Most of the single star progenitor systems proposed for SNe IIn, such as luminous blue variables, red supergiants, yellow hypergiants, and B[e] stars, all clearly show silicate dust in their pre-SN outflows. However, this post-SN result is consistent with the small sample of SNe IIn with mid-IR observations, none of which show signs of emission from silicate dust in their IR spectra.

SN 2011A: A Low-luminosity Interacting Transient with a Double Plateau and Strong Sodium Absorption

Science.gov (United States)

de Jaeger, T.; Anderson, J. P.; Pignata, G.; Hamuy, M.; Kankare, E.; Stritzinger, M. D.; Benetti, S.; Bufano, F.; Elias-Rosa, N.; Folatelli, G.; Förster, F.; González-Gaitán, S.; Gutiérrez, C. P.; Inserra, C.; Kotak, R.; Lira, P.; Morrell, N.; Taddia, F.; Tomasella, L.

2015-07-01

We present optical photometry and spectroscopy of the optical transient SN 2011A. Our data span 140 days after discovery including {BVRI} u\\prime g\\prime r\\prime i\\prime z\\prime photometry and 11 epochs of optical spectroscopy. Originally classified as a type IIn supernova (SN IIn) due to the presence of narrow Hα emission, this object shows exceptional characteristics. First, the light curve shows a double plateau, a property only observed before in the impostor SN 1997bs. Second, SN 2011A has a very low luminosity ({M}V=-15.72), placing it between normal luminous SNe IIn and SN impostors. Third, SN 2011A shows low velocity and high equivalent width absorption close to the sodium doublet, which increases with time and is most likely of circumstellar origin. This evolution is also accompanied by a change in line profile; when the absorption becomes stronger, a P Cygni profile appears. We discuss SN 2011A in the context of interacting SNe IIn and SN impostors, which appears to confirm the uniqueness of this transient. While we favor an impostor origin for SN 2011A, we highlight the difficulty in differentiating between terminal and non-terminal interacting transients. This paper includes data obtained with the 6.5 m Magellan Telescopes and du Pont telescope; the Gemini-North Telescope, Mauna Kea, USA (Gemini Program GN-2010B-Q67, PI: Stritzinger); the PROMPT telescopes at Cerro Tololo Inter-American Observatory in Chile; with the Liverpool Telescope operated on the island of La Palma by Liverpool John Moores University in the Spanish Observatorio del Roque de los Muchachos of the Instituto de Astrofisica de Canarias with financial support from the UK Science and Technology Facilities Council; based on observations made with the Nordic Optical Telescope, operated by the Nordic Optical Telescope Scientific Association at the Observatorio del Roque de los Muchachos, La Palma, Spain, of the Instituto de Astrofisica de Canarias; the NTT from ESO Science Archive

The Candidate Progenitor of the Type IIn SN 2010jl Is Not an Optically Luminous Star

Energy Technology Data Exchange (ETDEWEB)

Fox, Ori D. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Dyk, Schuyler D. Van [IPAC/Caltech, Mailcode 100-22, Pasadena, CA 91125 (United States); Dwek, Eli [Astrophysics Science Division, NASA Goddard Space Flight Center, Mail Code 665, Greenbelt, MD 20771 (United States); Smith, Nathan; Andrews, Jennifer [Steward Observatory, 933 N. Cherry Avenue, Tucson, AZ 85721 (United States); Filippenko, Alexei V.; Kelly, Patrick L.; Shivvers, Isaac [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Arendt, Richard G. [CRESST/UMBC/GSFC Code 665, NASA/GSFC, Greenbelt MD, 20771 (United States); Foley, Ryan J. [Department of Astronomy and Astrophysics, University of California, Santa Cruz, CA 95064 (United States); Miller, Adam A., E-mail: ofox@stsci.edu [Jet Propulsion Laboratory, 4800 Oak Grove Drive, MS 169-506, Pasadena, CA 91109 (United States)

2017-02-20

A blue source in pre-explosion Hubble Space Telescope ( HST )/Wide-Field Planetary Camera 2 (WFPC2) images falls within the 5 σ astrometric error circle (∼0.″24) derived from post-explosion ground-based imaging of SN 2010jl. At the time the ground-based astrometry was published, however, the SN had not faded sufficiently for post-explosion HST follow-up observations to determine a more precise astrometric solution and/or confirm if the pre-explosion source had disappeared, both of which are necessary to ultimately disentangle the possible progenitor scenarios. Here we present HST /WFC3 imaging of the SN 2010jl field obtained in 2014, 2015, and 2016 when the SN had faded sufficiently to allow for new constraints on the progenitor. The SN, which is still detected in the new images, is offset by 0.″061 ± 0.″008 (15 ± 2 pc) from the underlying and extended source of emission that contributes at least partially, if not entirely, to the blue source previously suggested as the candidate progenitor in the WFPC2 data. This point alone rules out the possibility that the blue source in the pre-explosion images is the exploding star, but may instead suggest an association with a young (<5–6 Myr) cluster and still argues for a massive (>30 M {sub ⊙}) progenitor. We obtain new upper limits on the flux from a single star at the SN position in the pre-explosion WFPC2 and Spitzer /IRAC images that may ultimately be used to constrain the progenitor properties.

The Candidate Progenitor of the Type IIn SN 2010jl Is Not an Optically Luminous Star

Science.gov (United States)

Fox, Ori D.; Van Dyk, Schuyler D.; Dwek, Eli; Smith, Nathan; Filippenko, Alexei V.; Andrews, Jennifer; Arendt, Richard G.; Foley, Ryan J.; Kelly, Patrick L.; Miller, Adam;

SN2015bh: NGC2770's 4th supernova or a luminous blue variable on its way to a Wolf-Rayet star?

DEFF Research Database (Denmark)

Thone, C. C.; de Ugarte Postigo, A.; Leloudas, G.

2017-01-01

yr that experienced a possible terminal explosion as type IIn SN in 2015, named SN 2015bh. This possible SN (or " main event") had a precursor peaking similar to 40 days before maximum. The total energy release of the main event ;is similar to 1.8 X 10(49) erg, consistent with a ... 2015bh lies within a spiral arm of NGC2770 next to several small star-forming regions with a metallicity of similar to 0.5 solar and a stellar population age of 7-10 Myr. SN 2015bh shares many similarities with SN 2009ip and may form a new class of objects that exhibit outbursts a few decades prior...

Massive stars dying alone: Extremely remote environments of SN2009ip and SN2010jp

Science.gov (United States)

Smith, Nathan

2014-10-01

We propose an imaging study of the astonishingly remote environments of two recent supernovae (SNe): SN2009ip and SN2010jp. Both were unusual Type IIn explosions that crashed into dense circumstellar material (CSM) ejected by the star shortly before explosion. The favored progenitors of these SNe are very massive luminous blue variable (LBV) stars. In fact, SN2009ip presents an extraordinay case where the LBV-like progenitor was actually detected directly in archival HST data, and where we obtained spectra and photometry for numerous pre-SN eruptions. No other SN has this treasure trove of detailed information about the progenitor (not even SN1987A). SN2010jp represents a possible collapsar-powered event, since it showed evidence of a fast bipolar jet in spectra and a low 56Ni mass; this would be an analog of the black-hole forming explosions that cause gamma ray bursts, but where the relativistic jet is damped by a residual H envelope on the star. In both cases, the only viable models for these SNe involve extremely massive (initial masses of 40-100 Msun) progenitor stars. This seems at odds with their extremely remote environments in the far outskirts of their host galaxies, with no detected evidence for an underlying massive star population in ground-based data (nor in the single shallow WFPC2/F606W image of SN2009ip). Here we propose deep UV HST images to search for any mid/late O-type stars nearby, deep red images to detect any red supergiants, and an H-alpha image to search for any evidence of ongoing star formation in the vicinity. These observations will place important and demanding constraints on the initial masses and ages of these progenitors.

SN 2016coi/ASASSN-16fp: An example of residual helium in a type Ic supernova?

Science.gov (United States)

Prentice, S. J.; Ashall, C.; Mazzali, P. A.; Zhang, J.-J.; James, P. A.; Wang, X.-F.; Vinkó, J.; Percival, S.; Short, L.; Piascik, A.; Huang, F.; Mo, J.; Rui, L.-M.; Wang, J.-G.; Xiang, D.-F.; Xin, Y.-X.; Yi, W.-M.; Yu, X.-G.; Zhai, Q.; Zhang, T.-M.; Hosseinzadeh, G.; Howell, D. A.; McCully, C.; Valenti, S.; Cseh, B.; Hanyecz, O.; Kriskovics, L.; Pál, A.; Sárneczky, K.; Sódor, Á.; Szakáts, R.; Székely, P.; Varga-Verebélyi, E.; Vida, K.; Bradac, M.; Reichart, D. E.; Sand, D.; Tartaglia, L.

2018-05-01

The optical observations of Ic-4 supernova (SN) 2016coi/ASASSN-16fp, from ˜2 to ˜450 days after explosion, are presented along with analysis of its physical properties. The SN shows the broad lines associated with SNe Ic-3/4 but with a key difference. The early spectra display a strong absorption feature at ˜5400 Åwhich is not seen in other SNe Ic-3/4 at this epoch. This feature has been attributed to HeIin the literature. Spectral modelling of the SN in the early photospheric phase suggests the presence of residual He in a C/O dominated shell. However, the behaviour of the HeIlines is unusual when compared with He-rich SNe, showing relatively low velocities and weakening rather than strengthening over time. The SN is found to rise to peak ˜16 d after core-collapse reaching a bolometric luminosity of Lp ˜ 3 × 1042 erg s-1. Spectral models, including the nebular epoch, show that the SN ejected 2.5 - 4 M⊙of material, with ˜1.5 M⊙below 5000 km s-1, and with a kinetic energy of (4.5 - 7) × 1051 erg. The explosion synthesised ˜0.14 M⊙of 56Ni. There are significant uncertainties in E(B - V)host and the distance however, which will affect Lp and MNi. SN 2016coi exploded in a host similar to the Large Magellanic Cloud (LMC) and away from star-forming regions. The properties of the SN and the host-galaxy suggest that the progenitor had MZAMS of 23 - 28 M⊙and was stripped almost entirely down to its C/O core at explosion.

SUPERNOVA PTF 09UJ: A POSSIBLE SHOCK BREAKOUT FROM A DENSE CIRCUMSTELLAR WIND

International Nuclear Information System (INIS)

Ofek, E. O.; Neill, J. D.; Kulkarni, S. R.; Forster, K.; Kasliwal, M. M.; Law, N.; Martin, C.; Quimby, R. M.; Rabinak, I.; Arcavi, I.; Waxman, E.; Gal-Yam, A.; Cenko, S. B.; Bloom, J. S.; Filippenko, A. V.; Poznanski, D.; Nugent, P. E.; Jacobsen, J.; Bildsten, L.; Howell, D. A.

2010-01-01

Type-IIn supernovae (SNe IIn), which are characterized by strong interaction of their ejecta with the surrounding circumstellar matter (CSM), provide a unique opportunity to study the mass-loss history of massive stars shortly before their explosive death. We present the discovery and follow-up observations of an SN IIn, PTF 09uj, detected by the Palomar Transient Factory (PTF). Serendipitous observations by Galaxy Evolution Explorer (GALEX) at ultraviolet (UV) wavelengths detected the rise of the SN light curve prior to the PTF discovery. The UV light curve of the SN rose fast, with a timescale of a few days, to a UV absolute AB magnitude of about -19.5. Modeling our observations, we suggest that the fast rise of the UV light curve is due to the breakout of the SN shock through the dense CSM (n ∼ 10 10 cm -3 ). Furthermore, we find that prior to the explosion the progenitor went through a phase of high mass-loss rate (∼0.1 M sun yr -1 ) that lasted for a few years. The decay rate of this SN was fast relative to that of other SNe IIn.

The Origin and Evolution of the Infrared Light Curve of SN2010jl

Science.gov (United States)

Dwek, Eli; Sarangi, Arkaprabha; Arendt, Richard; Fox, Ori; Kallman, Timothy; Kazanas, Demosthenes

2018-01-01

SN2010jl is a luminous core-collapse supernova (CCSN) of Type IIn that is surrounded by a dense circumstellar medium (CSM). The supernova (SN) luminosity vastly exceeds the available power from radiactive elements in the ejecta, and is powered by the interaction of the SN shock wave with the ambient medium. Upper limits on the UV and near-IR (NIR) emission from pre-explosion images of the region suggest that any progenitor star was hidden by pre-existing CSM dust. After day ~80, the SN spectrum shows the development of an IR excess above the extrapolated UVO emission arising from the shocked CSM. This IR component is attributed to thermal emission from dust.After day ~300, the light curve exhibits a rise in the NIR luminosity, concurrent with a steep decline at UVO wavelengths. Ruling out any possible contribution of SN-condensed dust to the IR light curve, we show that the early IR emission arises from the pre-existing CSM dust that survived the flash of radiation from the shock breakout. The late IR emission arises from newly-formed CSM dust that condensed in the cooling dust-free postshock gas of the advancing SN shock wave. Our analysis presents the first detailed modeling of dust formation in a cooling postshock environment, and provides important insights into the interaction of the SN shock wave with the CSM.

Stripped-envelope supernova SN 2004dk is now interacting with hydrogen-rich circumstellar material

Science.gov (United States)

Mauerhan, Jon C.; Filippenko, Alexei V.; Zheng, WeiKang; Brink, Thomas; Graham, Melissa L.; Shivvers, Isaac; Clubb, Kelsey

2018-05-01

The dominant mechanism and time scales over which stripped-envelope supernovae (SNe) progenitor stars shed their hydrogen envelopes are uncertain. Observations of Type Ib and Ic SNe at late phases could reveal the optical signatures of interaction with distant circumstellar material (CSM) providing important clues on the origin of the necessary pre-SN mass loss. We report deep late-time optical spectroscopy of the Type Ib explosion SN 2004dk 4684 days (13 years) after discovery. We detect strong Hα emission with an intermediate line width of ˜400 km s-1 and luminosity ˜2.5 × 1039 erg s-1, signaling that the SN blast wave has caught up with the hydrogen-rich CSM lost by the progenitor system. The line luminosity is the highest ever reported for a SN at this late stage. Prominent emission features of He I, Fe, and Ca are also detected. The spectral characteristics are consistent with CSM energized by the forward shock, and resemble the late-time spectra of the persistently interacting Type IIn SNe 2005ip and 1988Z. We suggest that the onset of interaction with H-rich CSM was associated with a previously reported radio rebrightening at ˜1700 days. The data indicate that the mode of pre-SN mass loss was a relatively slow dense wind that persisted millennia before the SN, followed by a short-lived Wolf-Rayet phase that preceded core-collapse and created a cavity within an extended distribution of CSM. We also present new spectra of SNe 2014C, PTF11iqb, and 2009ip, all of which also exhibit continued interaction with extended CSM distributions.

On the Possibility of Fast Radio Bursts from Inside Supernovae: The Case of SN 1986J

Science.gov (United States)

Bietenholz, Michael F.; Bartel, Norbert

2017-12-01

We discuss the possibility of obtaining fast radio bursts (FRBs) from the interior of supernovae, in particular SN 1986J. Young neutron stars are involved in many of the possible scenarios for the origin of FRBs, and it has been suggested that the high dispersion measures observed in FRBs might be produced by the ionized material in the ejecta of associated supernovae. Using VLA and VLBI measurements of the Type IIn SN 1986J, which has a central compact component not seen in other supernovae, we can directly observe for the first time radio signals, which originate in the interior of a young (∼30 year old) supernova. We show that at an age of 30 years, any FRB signal at ∼1 GHz would still be largely absorbed by the ejecta. By the time the ejecta have expanded so that a 1 GHz signal would be visible, the internal dispersion measure due to the SN ejecta would be below the values typically seen for FRBs. The high dispersion measures seen for the FRBs detected so far could of course be due to propagation through the intergalactic medium provided that the FRBs are at distances much larger than that of SN 1986J, which is 10 Mpc. We conclude that if FRBs originate in Type II SNe/SNRs, they would likely not become visible until 60 ∼ 200 years after the SN explosion.

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

Science.gov (United States)

Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

2018-06-05

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

Late-time spectral line formation in Type IIb supernovae, with application to SN 1993J, SN 2008ax, and SN 2011dh

Science.gov (United States)

Jerkstrand, A.; Ergon, M.; Smartt, S. J.; Fransson, C.; Sollerman, J.; Taubenberger, S.; Bersten, M.; Spyromilio, J.

2015-01-01

We investigate line formation processes in Type IIb supernovae (SNe) from 100 to 500 days post-explosion using spectral synthesis calculations. The modelling identifies the nuclear burning layers and physical mechanisms that produce the major emission lines, and the diagnostic potential of these. We compare the model calculations with data on the three best observed Type IIb SNe to-date - SN 1993J, SN 2008ax, and SN 2011dh. Oxygen nucleosynthesis depends sensitively on the main-sequence mass of the star and modelling of the [O I] λλ6300, 6364 lines constrains the progenitors of these three SNe to the MZAMS = 12-16 M⊙ range (ejected oxygen masses 0.3-0.9 M⊙), with SN 2011dh towards the lower end and SN 1993J towards the upper end of the range. The high ejecta masses from MZAMS ≳ 17 M⊙ progenitors give rise to brighter nebular phase emission lines than observed. Nucleosynthesis analysis thus supports a scenario of low-to-moderate mass progenitors for Type IIb SNe, and by implication an origin in binary systems. We demonstrate how oxygen and magnesium recombination lines may be combined to diagnose the magnesium mass in the SN ejecta. For SN 2011dh, a magnesium mass of 0.02-0.14 M⊙ is derived, which gives a Mg/O production ratio consistent with the solar value. Nitrogen left in the He envelope from CNO burning gives strong [N II] λλ6548, 6583 emission lines that dominate over Hα emission in our models. The hydrogen envelopes of Type IIb SNe are too small and dilute to produce any noticeable Hα emission or absorption after ~150 days, and nebular phase emission seen around 6550 Å is in many cases likely caused by [N II] λλ6548, 6583. Finally, the influence of radiative transport on the emergent line profiles is investigated. Significant line blocking in the metal core remains for several hundred days, which affects the emergent spectrum. These radiative transfer effects lead to early-time blueshifts of the emission line peaks, which gradually

The Low-luminosity Type IIP Supernova 2016bkv with Early-phase Circumstellar Interaction

Science.gov (United States)

Nakaoka, Tatsuya; Kawabata, Koji S.; Maeda, Keiichi; Tanaka, Masaomi; Yamanaka, Masayuki; Moriya, Takashi J.; Tominaga, Nozomu; Morokuma, Tomoki; Takaki, Katsutoshi; Kawabata, Miho; Kawahara, Naoki; Itoh, Ryosuke; Shiki, Kensei; Mori, Hiroki; Hirochi, Jun; Abe, Taisei; Uemura, Makoto; Yoshida, Michitoshi; Akitaya, Hiroshi; Moritani, Yuki; Ueno, Issei; Urano, Takeshi; Isogai, Mizuki; Hanayama, Hidekazu; Nagayama, Takahiro

2018-06-01

We present optical and near-infrared observations of a low-luminosity (LL) Type IIP supernova (SN) 2016bkv from the initial rising phase to the plateau phase. Our observations show that the end of the plateau is extended to ≳140 days since the explosion, indicating that this SN takes one of the longest times to finish the plateau phase among Type IIP SNe (SNe IIP), including LL SNe IIP. The line velocities of various ions at the middle of the plateau phase are as low as 1000–1500 km s‑1, which is the lowest even among LL SNe IIP. These measurements imply that the ejecta mass in SN 2016bkv is larger than that of the well-studied LL IIP SN 2003Z. In the early phase, SN 2016bkv shows a strong bump in the light curve. In addition, the optical spectra in this bump phase exhibit a blue continuum accompanied by a narrow Hα emission line. These features indicate an interaction between the SN ejecta and the circumstellar matter (CSM) as in SNe IIn. Assuming the ejecta–CSM interaction scenario, the mass loss rate is estimated to be ∼ 1.7× {10}-2 {M}ȯ yr‑1 within a few years before the SN explosion. This is comparable to or even larger than the largest mass loss rate observed for the Galactic red supergiants (∼ {10}-3 {M}ȯ yr‑1 for VY CMa). We suggest that the progenitor star of SN 2016bkv experienced a violent mass loss just before the SN explosion.

SN 2009bb: A PECULIAR BROAD-LINED TYPE Ic SUPERNOVA ,

International Nuclear Information System (INIS)

Pignata, Giuliano; Stritzinger, Maximilian; Phillips, M. M.; Morrell, Nidia; Boldt, Luis; Campillay, Abdo; Contreras, Carlos; Gonzalez, Sergio; Krzeminski, Wojtek; Roth, Miguel; Salgado, Francisco; Soderberg, Alicia; Mazzali, Paolo; Anderson, J. P.; Folatelli, Gaston; Foerster, Francisco; Hamuy, Mario; Maza, Jose; Levesque, Emily M.; Rest, Armin

2011-01-01

Ultraviolet, optical, and near-infrared photometry and optical spectroscopy of the broad-lined Type Ic supernova (SN) 2009bb are presented, following the flux evolution from -10 to +285 days past B-band maximum. Thanks to the very early discovery, it is possible to place tight constraints on the SN explosion epoch. The expansion velocities measured from near maximum spectra are found to be only slightly smaller than those measured from spectra of the prototype broad-lined SN 1998bw associated with GRB 980425. Fitting an analytical model to the pseudobolometric light curve of SN 2009bb suggests that 4.1 ± 1.9 M sun of material was ejected with 0.22 ± 0.06 M sun of it being 56 Ni. The resulting kinetic energy is 1.8 ± 0.7 x 10 52 erg. This, together with an absolute peak magnitude of M B = -18.36 ± 0.44, places SN 2009bb on the energetic and luminous end of the broad-lined Type Ic (SN Ic) sequence. Detection of helium in the early time optical spectra accompanied with strong radio emission and high metallicity of its environment makes SN 2009bb a peculiar object. Similar to the case for gamma-ray bursts (GRBs), we find that the bulk explosion parameters of SN 2009bb cannot account for the copious energy coupled to relativistic ejecta, and conclude that another energy reservoir (a central engine) is required to power the radio emission. Nevertheless, the analysis of the SN 2009bb nebular spectrum suggests that the failed GRB detection is not imputable to a large angle between the line-of-sight and the GRB beamed radiation. Therefore, if a GRB was produced during the SN 2009bb explosion, it was below the threshold of the current generation of γ-ray instruments.

Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

KAUST Repository

Hota, Mrinal Kanti; Hedhili, Mohamed N.; Wang, Qingxiao; Melnikov, Vasily; Mohammed, Omar F.; Alshareef, Husam N.

2015-01-01

Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2

Conduction-type control of SnSx films prepared by the sol–gel method for different sulfur contents

International Nuclear Information System (INIS)

Huang, Chung-Cheng; Lin, Yow-Jon; Chuang, Cheng-Yu; Liu, Chia-Jyi; Yang, Yao-Wei

2013-01-01

Highlights: ► The effect of S content on the electrical property of the SnS x film was examined. ► For S-rich films, the probability of having formed Sn vacancies (V Sn ) should be high. ► Transformation from V Sn to V Sn 2- is accompanied by lattice relaxation. ► Transformation from Sn 2+ to Sn 4+ is an offset to lattice relaxation. ► A link between the conduction type and defects was established. -- Abstract: The effect of S content on the electrical property of the sol–gel SnS x films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn 4+ and Sn 2+ . The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn 4+ /(Sn 4+ + Sn 2+ ) in the S-rich film. The probability of having formed Sn vacancies (V Sn ) should be high under S-rich growth conditions. Transformation from V Sn to V Sn 2- is accompanied by lattice relaxation. Therefore, transformation from Sn 2+ to Sn 4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnS x

The Peculiar SN 2005hk: Do Some Type Ia Supernovae Explode As Deflagrations?

Energy Technology Data Exchange (ETDEWEB)

Phillips, M.M.; Li, W.; Frieman, J.A.; Blinnikov, S.I.; DePoy, D.; Prieto, J.L.; Milne, P.; Contreras, C.; Folatelli, Gaston; Morrell, N.; Hamuy, M.; Suntzeff, N.B.; Roth, M.; Gonzalez, S.; Krzeminski, W.; Filippenko, A.V.; Freedman, W.L.; Chornock, R.; Jha, S.; Madore, B.F.; Persson, S.E.; /Las Campanas Observ. /UC, Berkeley, Astron. Dept.

2006-11-14

We present extensive u{prime}g{prime}r{prime}i{prime} BV RIY JHK{sub s} photometry and optical spectroscopy of SN 2005hk. These data reveal that SN 2005hk was nearly identical in its observed properties to SN 2002cx, which has been called 'the most peculiar known type Ia supernova'. Both supernovae exhibited high ionization SN 1991T-like pre-maximum spectra, yet low peak luminosities like SN 1991bg. The spectra reveal that SN 2005hk, like SN 2002cx, exhibited expansion velocities that were roughly half those of typical type Ia supernovae. The R and I light curves of both supernovae were also peculiar in not displaying the secondary maximum observed for normal type Ia supernovae. Our Y JH photometry of SN 2005hk reveals the same peculiarity in the near-infrared. By combining our optical and near-infrared photometry of SN 2005hk with published ultraviolet light curves obtained with the Swift satellite, we are able to construct a bolometric light curve from {approx} 10 days before to {approx}60 days after B maximum. The shape and unusually low peak luminosity of this light curve, plus the low expansion velocities and absence of a secondary maximum at red and near-infrared wavelengths, are all in reasonable agreement with model calculations of a 3D deflagration which produces {approx} 0.25 M{sub {circle_dot}} of {sup 56}Ni.

A model for phase evolution and volume expansion in tube type Nb3Sn conductors

Science.gov (United States)

Xu, X.; Sumption, M. D.; Collings, E. W.

2013-12-01

In this work, an analytic model for phase formation and volume expansion during heat treatment in tube type Nb3Sn strands is presented. Tube type Nb3Sn conductors consist of Nb or Nb-Ta alloy tube with a simple Cu/Sn binary metal insert to form the basic subelement (filament). A number of these elements, each with an outer Cu jacket, are restacked to form a multifilamentary strand. The present tube type conductors, with 4.2 K, 12 T non-Cu critical current density (Jc) in the 2000-2500 A mm-2 range and effective subelement diameters (deff) in the 12-36 μm range, are of interest for a number of applications. During the reaction of typical tube type strands, the Sn-Cu becomes molten and reacts with the Nb tube first to form NbSn2, then Nb6Sn5. At later times in the reaction sequence, all of the NbSn2 and Nb6Sn5 is converted to Nb3Sn. Some of the Nb3Sn is formed by a Nb-Sn reaction and has a fine grain (FG) structure, while some is converted from Nb6Sn5, which results in a coarse grain (CG) region. The fractions of FG and CG A15 are important in determining the final conductor properties. In this work we develop an analytic model to predict the radial extents of the various phases, and in particular the final FG and CG fractions based on the starting Nb, Cu, and Sn amounts in the subelements. The model is then compared to experimental results and seen to give reasonable agreement. By virtue of this model we outline an approach to minimize the CG regions in tube type and PIT strands and maximize the final FG area fractions. Furthermore, the volume change during the various reaction stages was also studied. It is proposed that the Sn content in the Cu-Sn alloy has a crucial influence on the radial expansion.

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.

2013-11-25

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia SUPERNOVA

International Nuclear Information System (INIS)

Foley, Ryan J.; Narayan, Gautham; Challis, Peter J.; Kirshner, Robert P.; Filippenko, Alexei V.; Silverman, Jeffrey M.; Steele, Thea N.

2010-01-01

SN 2006bt displays characteristics unlike those of any other known Type Ia supernova (SN Ia). We present optical light curves and spectra of SN 2006bt which demonstrate the peculiar nature of this object. SN 2006bt has broad, slowly declining light curves indicative of a hot, high-luminosity SN, but lacks a prominent second maximum in the i band as do low-luminosity SNe Ia. Its spectra are similar to those of low-luminosity SNe Ia, containing features that are only present in cool SN photospheres. Light-curve fitting methods suggest that SN 2006bt is reddened by a significant amount of dust; however, it occurred in the outskirts of its early-type host galaxy and has no strong Na D absorption in any of its spectra, suggesting a negligible amount of host-galaxy dust absorption. C II is possibly detected in our pre-maximum spectra, but at a much lower velocity than other elements. The progenitor was likely very old, being a member of the halo population of a galaxy that shows no signs of recent star formation. SNe Ia have been very successfully modeled as a one-parameter family, and this is fundamental to their use as cosmological distance indicators. SN 2006bt is a challenge to that picture, yet its relatively normal light curves allowed SN 2006bt to be included in cosmological analyses. We generate mock SN Ia data sets which indicate that contamination by similar objects will both increase the scatter of a SN Ia Hubble diagram and systematically bias measurements of cosmological parameters. However, spectra and rest-frame i-band light curves should provide a definitive way to identify and eliminate such objects.

VizieR Online Data Catalog: Circumstellar-interacting supernovae (Taddia+, 2015)

Science.gov (United States)

Taddia, F.; Sollerman, J.; Fremling, C.; Pastorello, A.; Leloudas, G.; Fransson, C.; Nyholm, A.; Stritzinger, M. D.; Ergon, M.; Roy, R.; Migotto, K.

2015-11-01

In Table 1 we report the list of 60 transients included in our sample. Thirty-five of them are SNe IIn, six are SNe Ibn, one is a SN Ia-CSM, 18 are SN IMs (if we also count SN 2009ip in the SN IMs, then we have 19 of these transients). With the NOT, long-slit spectra were obtained for the host galaxies of 13 SNe IIn, five SNe Ibn, one SN Ia-CSM, and 16 SN IMs (the derived metallicity for SN 2007sv was published in Tartaglia et al. 2015MNRAS.447..117T). The host galaxies observed at the NOT are marked with the letter "o" in the third column of Table 1. With the NOT, we also obtained broad-band R and narrow-band Hα images for the SNe IIn (except for SN 1995G) and Ibn. We complemented our observed sample with host galaxies whose metallicities (at the center of the galaxy or at the SN position) were already available in the literature (marked with the letter "l" in the third column of Table 1) or whose spectra were available in public archives (marked with the letter "a" in the third column of Table 1). (7 data files).

Electronic structure and p-type doping of ZnSnN2

Science.gov (United States)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

International Nuclear Information System (INIS)

Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

2017-01-01

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Determination of a new structure type in the Sc–Fe–Ge–Sn system

International Nuclear Information System (INIS)

Brgoch, Jakoah; Ran, Sheng; Thimmaiah, Srinivasa; Canfield, Paul C.; Miller, Gordon J.

2013-01-01

Highlights: ► A new structure type with the composition Sc 4 Fe 5 Ge 6.10(3) Sn 1.47(2) . ► Crystallizes in the space group Immm (No. 71, oI144). ► Sample obtained using a reactive Sn flux. ► Electronic structure calculations indicate polar intermetallic bonding network. - Abstract: A new structure type has been discovered in the system Sc–Fe–Ge–Sn by employing Sn as a flux medium. According to single crystal X-ray diffraction, the new structure has a composition of Sc 4 Fe 5 Ge 6.10(3) Sn 1.47(2) and crystallizes in the space group Immm (No. 71, oI144) with lattice parameters of a = 5.230(1) Å, b = 13.467(3) Å, and c = 30.003(6) Å. The structure is composed of square anti-prismatic clusters that are condensed into zig-zag chains along the [0 1 0] direction. These chains are further condensed through a split Sn/Ge position, forming a three-dimensional network. Magnetization measurements indicate an antiferromagnetic phase transition near 240 K. Electronic structure calculations identified the most favorable bonding network in this new system. Using crystal orbital Hamilton population (COHP) curves and their integrated values (ICOHP), a polar intermetallic bonding network involving Sc–Ge as well as Fe–Sn and Fe–Ge contacts can be assigned to this new structure type.

Type II Supernova Light Curves and Spectra from the CfA

Science.gov (United States)

Hicken, Malcolm; Friedman, Andrew S.; Blondin, Stephane; Challis, Peter; Berlind, Perry; Calkins, Mike; Esquerdo, Gil; Matheson, Thomas; Modjaz, Maryam; Rest, Armin; Kirshner, Robert P.

2017-11-01

We present multiband photometry of 60 spectroscopically confirmed supernovae (SNe): 39 SNe II/IIP, 19 IIn, 1 IIb, and 1 that was originally classified as a IIn but later as a Ibn. Of these, 46 have only optical photometry, 6 have only near-infrared (NIR) photometry, and 8 have both optical and NIR. The median redshift of the sample is 0.016. We also present 195 optical spectra for 48 of the 60 SN. There are 26 optical and 2 NIR light curves of SNe II/IIP with redshifts z> 0.01, some of which may give rise to useful distances for cosmological applications. All photometry was obtained between 2000 and 2011 at the Fred Lawrence Whipple Observatory (FLWO), via the 1.2 m and 1.3 m PAIRITEL telescopes for the optical and NIR, respectively. Each SN was observed in a subset of the u\\prime {UBVRIr}\\prime I\\prime {{JHK}}s bands. There are a total of 2932 optical and 816 NIR light curve points. Optical spectra were obtained using the FLWO 1.5 m Tillinghast telescope with the FAST spectrograph and the MMT Telescope with the Blue Channel Spectrograph. Our photometry is in reasonable agreement with select samples from the literature: two-thirds of our star sequences have average V offsets within ±0.02 mag and roughly three-quarters of our light curves have average differences within ±0.04 mag. The data from this work and the literature will provide insight into SN II explosions, help with developing methods for photometric SN classification, and contribute to their use as cosmological distance indicators.

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

Energy Technology Data Exchange (ETDEWEB)

Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

2017-04-15

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

Determination of a new structure type in the Sc-Fe-Ge-Sn system

Energy Technology Data Exchange (ETDEWEB)

Brgoch, Jakoah [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ran, Sheng [Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Thimmaiah, Srinivasa [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Canfield, Paul C. [Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Miller, Gordon J., E-mail: gmiller@iastate.edu [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Ames Laboratory, US Department of Energy, Ames, IA 50011 (United States)

2013-01-05

Highlights: Black-Right-Pointing-Pointer A new structure type with the composition Sc{sub 4}Fe{sub 5}Ge{sub 6.10(3)}Sn{sub 1.47(2)}. Black-Right-Pointing-Pointer Crystallizes in the space group Immm (No. 71, oI144). Black-Right-Pointing-Pointer Sample obtained using a reactive Sn flux. Black-Right-Pointing-Pointer Electronic structure calculations indicate polar intermetallic bonding network. - Abstract: A new structure type has been discovered in the system Sc-Fe-Ge-Sn by employing Sn as a flux medium. According to single crystal X-ray diffraction, the new structure has a composition of Sc{sub 4}Fe{sub 5}Ge{sub 6.10(3)}Sn{sub 1.47(2)} and crystallizes in the space group Immm (No. 71, oI144) with lattice parameters of a = 5.230(1) A, b = 13.467(3) A, and c = 30.003(6) A. The structure is composed of square anti-prismatic clusters that are condensed into zig-zag chains along the [0 1 0] direction. These chains are further condensed through a split Sn/Ge position, forming a three-dimensional network. Magnetization measurements indicate an antiferromagnetic phase transition near 240 K. Electronic structure calculations identified the most favorable bonding network in this new system. Using crystal orbital Hamilton population (COHP) curves and their integrated values (ICOHP), a polar intermetallic bonding network involving Sc-Ge as well as Fe-Sn and Fe-Ge contacts can be assigned to this new structure type.

Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

International Nuclear Information System (INIS)

Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

2015-01-01

Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

119Sn Moessbauer spectroscopy in the magnetically diluted Heusler-type systems

International Nuclear Information System (INIS)

Ruebenbauer, K.

1981-01-01

119 Sn Moessbauer investigations of the ferromagnetically diluted Nisub(2)Mnsub(x)Bsub(1-x)Sn(B=Ti, V) and Pdsub(2)Mnsub(x)Vsub(1-x)Sn Heusler-type systems have been performed and the results are reviewed and discussed. It has been found that distributions of the transferred hyperfine magnetic field as seen by a tin nucleus are very sensitive for a type of the local magnetic interaction in these simple ferromagnets, especially when studied versus the sample temperature. This sensitivity allows to reach some conclusions about the coupling mechanism between localised manganese magnetic moments. Namely, it is concluded that the interaction beyond the second neighbour shell is practically irrelevant for the magnetic ordering process. This very fact means that the free electron approach to the calculation of exchange integrals can not be applied for these particular systems. (Author)

Ordered CoSn-type ternary phases in Co3Sn3-xGex

DEFF Research Database (Denmark)

Allred, Jared M.; Jia, Shuang; Bremholm, Martin

2012-01-01

. By taking advantage of the chemical differences between the two crystallographically inequivalent Sn sites in the structure, we observe ordered ternary phases, nominally Co3SnGe2 and Co3Sn2Ge. The electron count and unit cell configuration remain unchanged from CoSn; these observations thus help to clarify...

Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

Energy Technology Data Exchange (ETDEWEB)

McCully, Curtis; Jha, Saurabh W. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Foley, Ryan J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Chornock, Ryan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Holtzman, Jon A. [Department of Astronomy, MSC 4500, New Mexico State University, P.O. Box 30001, Las Cruces, NM 88003 (United States); Balam, David D. [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria, BC V9E 2E7 (Canada); Branch, David [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States); Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Frieman, Joshua [Kavli Institute for Cosmological Physics and Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Fynbo, Johan; Leloudas, Giorgos [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen Ø (Denmark); Galbany, Lluis [Institut de Física d' Altes Energies, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Graham, Melissa L. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Leonard, Douglas C., E-mail: cmccully@physics.rutgers.edu [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); and others

2014-05-10

We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n{sub e} ≳ 10{sup 9} cm{sup –3}. Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

International Nuclear Information System (INIS)

McCully, Curtis; Jha, Saurabh W.; Foley, Ryan J.; Chornock, Ryan; Holtzman, Jon A.; Balam, David D.; Branch, David; Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong; Frieman, Joshua; Fynbo, Johan; Leloudas, Giorgos; Galbany, Lluis; Garnavich, Peter M.; Graham, Melissa L.; Hsiao, Eric Y.; Leonard, Douglas C.

2014-01-01

We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n e ≳ 10 9 cm –3 . Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

The Transition of a Type IIL Supernova into a Supernova Remnant: Late-time Observations of SN 2013by

Energy Technology Data Exchange (ETDEWEB)

Black, C. S.; Fesen, R. A. [6127 Wilder Lab, Department of Physics and Astronomy, Dartmouth College, Hanover, NH 03755 (United States); Milisavljevic, D.; Patnaude, D. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Margutti, R. [Center for Interdisciplinary Exploration and Research in Astrophysics (CIERA) and Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208 (United States); Parker, S. [Parkdale Observatory, 225 Warren Road, RDl Oxford, Canterbury 7495 (New Zealand)

2017-10-10

We present early-time Swift and Chandra X-ray data along with late-time optical and near-infrared observations of SN 2013by, a Type IIL supernova (SN) that occurred in the nearby spiral galaxy ESO 138−G10 ( D ∼ 14.8 Mpc). Optical and NIR photometry and spectroscopy follow the late-time evolution of the SN from days +89 to +457 post maximum brightness. The optical spectra and X-ray light curves are consistent with the picture of an SN having prolonged interaction with circumstellar material (CSM) that accelerates the transition from SN to supernova remnant (SNR). Specifically, we find SN 2013by’s H α profile exhibits significant broadening (∼10,000 km s{sup −1}) on day +457, the likely consequence of high-velocity, H-rich material being excited by a reverse shock. A relatively flat X-ray light curve is observed that cannot be modeled using Inverse Compton scattering processes alone, but requires an additional energy source most likely originating from the SN-CSM interaction. In addition, we see the first overtone of CO emission near 2.3 μ m on day +152, signaling the formation of molecules and dust in the SN ejecta and is the first time CO has been detected in a Type IIL SN. We compare SN 2013by with Type IIP SNe, whose spectra show the rarely observed SN-to-SNR transition in varying degrees and conclude that Type IIL SNe may enter the remnant phase at earlier epochs than their Type IIP counterparts.

Interacting Supernovae: Types IIn and Ibn

Science.gov (United States)

Smith, Nathan

Supernovae that show evidence of strong shock interaction between their ejecta and pre-existing slower circumstellar material (CSM) constitute an interesting, diverse, and still poorly understood category of explosive transients. The chief reason they are extremely interesting is because they tell us that in a subset of stellar deaths, the progenitor star becomes wildly unstable in the years, decades, or centuries before explosion. This is something that has not been included in standard stellar evolution models but may significantly change the end product and yield of that evolution and complicates our attempts to map SNe to their progenitors. Another reason they are interesting is because CSM interaction is an efficient engine for making bright transients, allowing superluminous transients to arise from normal SN explosion energy, and transients of normal supernova luminosity to arise from sub-energetic explosions or low radioactivity yield. CSM interaction shrouds the fast ejecta in bright shock emission, obscuring our view of the underlying explosion, and the radiation hydrodynamics is challenging to model. The CSM interaction may also be highly nonspherical, perhaps linked to binary interaction in the progenitor system. In some cases, these complications make it difficult to tell the difference between a core-collapse and thermonuclear explosion or to discern between a nonterminal eruption, failed supernova, or weak supernova. Efforts to uncover the physical parameters of individual events and connections to progenitor stars make this a rapidly evolving topic that challenges paradigms of stellar evolution.

Three NiAs-Ni 2In Type Structures in the Mn-Sn System

Science.gov (United States)

Elding-Pontén, Margareta; Stenberg, Lars; Larsson, Ann-Kristin; Lidin, Sven; Ståhl, Kenny

1997-03-01

TheB8-type structure field of the Mn-Sn system has been investigated. Two high temperature phases (HTP1 and HTP2) and one low temperature phase (Mn3Sn2) were found. They all crystallize with the NiAs structure type with part of the trigonal bipyramidal interstices filled by manganese atoms in an ordered manner. The ordering as well as the manganese content is different for the three phases, giving rise to three different orthorhombic superstructures. Mn3Sn2seems to have the lowest manganese content, since the corresponding basal unit cell is smaller than for HTP1-2. Structural models of the phases are based on selected area electron diffraction, X-ray powder diffraction, and preliminary single crystal X-ray measurements. The ideal cell parameters found are (a=7ahex,b=3ahex,c=chex), (a=5ahex,b=3ahex,c=chex), and (a=2ahex,b=3ahex,c=chex) for HTP1, HTP2, and Mn3Sn2, respectively. The crystal structure of Mn3Sn2has been refined by means of the Rietveld method from X-ray powder diffraction data. Mn3Sn2is orthorhombic,Pnma,a=7.5547(2),b=5.4994(2),c=8.5842(2) Å,Z=4. (Pbnmin the setting above.) The compound is isostructural with Ni3Sn2andγ‧-Co3Sn2(H. Fjellvåg and A. Kjekshus,Acta Chem. Scand.A40, 23-30 (1986)). FinalRp=8.97%,Rwp=11.44%, GOF=2.86, andRBragg=4.11% using 43 parameters and 5701 observations and 330 Bragg reflections.

Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

Energy Technology Data Exchange (ETDEWEB)

Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

2015-05-01

Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

Applying Collaborative Learning and Quality Improvement to Public Health: Lessons from the Collaborative Improvement and Innovation Network (CoIIN) to Reduce Infant Mortality.

Science.gov (United States)

Ghandour, Reem M; Flaherty, Katherine; Hirai, Ashley; Lee, Vanessa; Walker, Deborah Klein; Lu, Michael C

2017-06-01

Infant mortality remains a significant public health problem in the U.S. The Collaborative Improvement & Innovation Network (CoIIN) model is an innovative approach, using the science of quality improvement and collaborative learning, which was applied across 13 Southern states in Public Health Regions IV and VI to reduce infant mortality and improve birth outcomes. We provide an in-depth discussion of the history, development, implementation, and adaptation of the model based on the experience of the original CoIIN organizers and participants. In addition to the political genesis and functional components of the initiative, 8 key lessons related to staffing, planning, and implementing future CoIINs are described in detail. This paper reports the findings from a process evaluation of the model. Data on the states' progress toward reducing infant mortality and improving birth outcomes were collected through a survey in the final months of a 24-month implementation period, as well as through ongoing team communications. The peer-to-peer exchange and platform for collaborative learning, as well as the sharing of data across the states, were major strengths and form the foundation for future CoIIN efforts. A lasting legacy of the initiative is the unique application and sharing of provisional "real time" data to inform "real time" decision-making. The CoIIN model of collaborative learning, QI, and innovation offers a promising approach to strengthening partnerships within and across states, bolstering data systems to inform and track progress more rapidly, and ultimately accelerating improvement toward healthier communities, States, and the Nation as a whole.

Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

KAUST Repository

Hota, Mrinal Kanti

2015-02-23

Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.

Type Ia Supernova Light Curve Inference: Hierarchical Models for Nearby SN Ia in the Optical and Near Infrared

Science.gov (United States)

Mandel, Kaisey; Kirshner, R. P.; Narayan, G.; Wood-Vasey, W. M.; Friedman, A. S.; Hicken, M.

2010-01-01

I have constructed a comprehensive statistical model for Type Ia supernova light curves spanning optical through near infrared data simultaneously. The near infrared light curves are found to be excellent standard candles (sigma(MH) = 0.11 +/- 0.03 mag) that are less vulnerable to systematic error from dust extinction, a major confounding factor for cosmological studies. A hierarchical statistical framework incorporates coherently multiple sources of randomness and uncertainty, including photometric error, intrinsic supernova light curve variations and correlations, dust extinction and reddening, peculiar velocity dispersion and distances, for probabilistic inference with Type Ia SN light curves. Inferences are drawn from the full probability density over individual supernovae and the SN Ia and dust populations, conditioned on a dataset of SN Ia light curves and redshifts. To compute probabilistic inferences with hierarchical models, I have developed BayeSN, a Markov Chain Monte Carlo algorithm based on Gibbs sampling. This code explores and samples the global probability density of parameters describing individual supernovae and the population. I have applied this hierarchical model to optical and near infrared data of over 100 nearby Type Ia SN from PAIRITEL, the CfA3 sample, and the literature. Using this statistical model, I find that SN with optical and NIR data have a smaller residual scatter in the Hubble diagram than SN with only optical data. The continued study of Type Ia SN in the near infrared will be important for improving their utility as precise and accurate cosmological distance indicators.

THE PROGENITOR OF THE TYPE IIb SN 2008ax REVISITED

International Nuclear Information System (INIS)

Folatelli, Gastón; Bersten, Melina C.; Benvenuto, Omar G.; Kuncarayakti, Hanindyo; Maeda, Keiichi; Nomoto, Ken’ichi

2015-01-01

Hubble Space Telescope observations of the site of the supernova (SN) SN 2008ax obtained in 2011 and 2013 reveal that the possible progenitor object detected in pre-explosion images was in fact multiple. Four point sources are resolved in the new, higher-resolution images. We identify one of the sources with the fading SN. The other three objects are consistent with single supergiant stars. We conclude that their light contaminated the previously identified progenitor candidate. After subtraction of these stars, the progenitor appears to be significantly fainter and bluer than previously measured. Post-explosion photometry at the SN location indicates that the progenitor object has disappeared. If single, the progenitor is compatible with a supergiant star of B to mid-A spectral type, while a Wolf–Rayet (W-R) star would be too luminous in the ultraviolet to account for the observations. Moreover, our hydrodynamical modeling shows that the pre-explosion mass was 4–5 M ⊙ and the radius was 30–50 R ⊙ , which is incompatible with a W-R progenitor. We present a possible interacting binary progenitor computed with our evolutionary models that reproduces all the observational evidence. A companion star as luminous as an O9–B0 main-sequence star may have remained after the explosion

Two transitional type Ia supernovae located in the Fornax cluster member NGC 1404: SN 2007on and SN 2011iv

Science.gov (United States)

Gall, C.; Stritzinger, M. D.; Ashall, C.; Baron, E.; Burns, C. R.; Hoeflich, P.; Hsiao, E. Y.; Mazzali, P. A.; Phillips, M. M.; Filippenko, A. V.; Anderson, J. P.; Benetti, S.; Brown, P. J.; Campillay, A.; Challis, P.; Contreras, C.; Elias de la Rosa, N.; Folatelli, G.; Foley, R. J.; Fraser, M.; Holmbo, S.; Marion, G. H.; Morrell, N.; Pan, Y.-C.; Pignata, G.; Suntzeff, N. B.; Taddia, F.; Robledo, S. Torres; Valenti, S.

2018-03-01

We present an analysis of ultraviolet (UV) to near-infrared observations of the fast-declining Type Ia supernovae (SNe Ia) 2007on and 2011iv, hosted by the Fornax cluster member NGC 1404. The B-band light curves of SN 2007on and SN 2011iv are characterised by Δm15 (B) decline-rate values of 1.96 mag and 1.77 mag, respectively. Although they have similar decline rates, their peak B- and H-band magnitudes differ by 0.60 mag and 0.35 mag, respectively. After correcting for the luminosity vs. decline rate and the luminosity vs. colour relations, the peak B-band and H-band light curves provide distances that differ by 14% and 9%, respectively. These findings serve as a cautionary tale for the use of transitional SNe Ia located in early-type hosts in the quest to measure cosmological parameters. Interestingly, even though SN 2011iv is brighter and bluer at early times, by three weeks past maximum and extending over several months, its B - V colour is 0.12 mag redder than that of SN 2007on. To reconcile this unusual behaviour, we turn to guidance from a suite of spherical one-dimensional Chandrasekhar-mass delayed-detonation explosion models. In this context, 56Ni production depends on both the so-called transition density and the central density of the progenitor white dwarf. To first order, the transition density drives the luminosity-width relation, while the central density is an important second-order parameter. Within this context, the differences in the B - V colour evolution along the Lira regime suggest that the progenitor of SN 2011iv had a higher central density than SN 2007on. The photometry tables are only available at the CDS via anonymous ftp to http://cdsarc.u-strasbg.fr (http://130.79.128.5) or via http://cdsarc.u-strasbg.fr/viz-bin/qcat?J/A+A/611/A58

SEARCH FOR PRECURSOR ERUPTIONS AMONG TYPE IIB SUPERNOVAE

Energy Technology Data Exchange (ETDEWEB)

Strotjohann, Nora L.; Ofek, Eran O.; Gal-Yam, Avishay; Yaron, Ofer [Benoziyo Center for Astrophysics, Weizmann Institute of Science, 76100 Rehovot (Israel); Sullivan, Mark [School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Kulkarni, Shrinivas R.; Cao, Yi [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Shaviv, Nir J. [School of Natural Sciences, Institute for Advanced Study, 1 Einstein Drive, Princeton, NJ 08540 (United States); Fremling, Christoffer; Sollerman, Jesper [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Kasliwal, Mansi M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Nugent, Peter E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Arcavi, Iair [Las Cumbres Observatory Global Telescope Network, 6740 Cortona Drive, Suite 102, Goleta, CA 93111 (United States); Filippenko, Alexei V. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Laher, Russ; Surace, Jason [Spitzer Science Center, California Institute of Technology, M/S 314-6, Pasadena, CA 91125 (United States)

2015-10-01

The progenitor stars of several Type IIb supernovae (SNe) show indications of extended hydrogen envelopes. These envelopes might be the outcome of luminous energetic pre-explosion events, so-called precursor eruptions. We use the Palomar Transient Factory (PTF) pre-explosion observations of a sample of 27 nearby SNe IIb to look for such precursors during the final years prior to the SN explosion. No precursors are found when combining the observations in 15-day bins, and we calculate the absolute-magnitude-dependent upper limit on the precursor rate. At the 90% confidence level, SNe IIb have on average <0.86 precursors as bright as an absolute R-band magnitude of −14 in the final 3.5 years before the explosion and <0.56 events over the final year. In contrast, precursors among SNe IIn have a ≳5 times higher rate. The kinetic energy required to unbind a low-mass stellar envelope is comparable to the radiated energy of a few-weeks-long precursor that would be detectable for the closest SNe in our sample. Therefore, mass ejections, if they are common in such SNe, are radiatively inefficient or have durations longer than months. Indeed, when using 60-day bins, a faint precursor candidate is detected prior to SN 2012cs (∼2% false-alarm probability). We also report the detection of the progenitor of SN 2011dh that does not show detectable variability over the final two years before the explosion. The suggested progenitor of SN 2012P is still present, and hence is likely a compact star cluster or an unrelated object.

THE PROGENITOR OF THE TYPE IIb SN 2008ax REVISITED

Energy Technology Data Exchange (ETDEWEB)

Folatelli, Gastón; Bersten, Melina C.; Benvenuto, Omar G. [Instituto de Astrofísica de La Plata (Argentina); Kuncarayakti, Hanindyo [Millennium Institute of Astrophysics (MAS), Casilla 36-D, Santiago (Chile); Maeda, Keiichi; Nomoto, Ken’ichi, E-mail: gaston@fcaglp.unlp.edu.ar [Kavli Institute for the Physics and Mathematics of the Universe (WPI), The University of Tokyo, Kashiwa, Chiba 277-8583 (Japan)

2015-10-01

Hubble Space Telescope observations of the site of the supernova (SN) SN 2008ax obtained in 2011 and 2013 reveal that the possible progenitor object detected in pre-explosion images was in fact multiple. Four point sources are resolved in the new, higher-resolution images. We identify one of the sources with the fading SN. The other three objects are consistent with single supergiant stars. We conclude that their light contaminated the previously identified progenitor candidate. After subtraction of these stars, the progenitor appears to be significantly fainter and bluer than previously measured. Post-explosion photometry at the SN location indicates that the progenitor object has disappeared. If single, the progenitor is compatible with a supergiant star of B to mid-A spectral type, while a Wolf–Rayet (W-R) star would be too luminous in the ultraviolet to account for the observations. Moreover, our hydrodynamical modeling shows that the pre-explosion mass was 4–5 M{sub ⊙} and the radius was 30–50 R{sub ⊙}, which is incompatible with a W-R progenitor. We present a possible interacting binary progenitor computed with our evolutionary models that reproduces all the observational evidence. A companion star as luminous as an O9–B0 main-sequence star may have remained after the explosion.

Ultraviolet Detection of the Binary Companion to the Type IIb SN 2001ig

Science.gov (United States)

Ryder, Stuart D.; Van Dyk, Schuyler D.; Fox, Ori D.; Zapartas, Emmanouil; de Mink, Selma E.; Smith, Nathan; Brunsden, Emily; Azalee Bostroem, K.; Filippenko, Alexei V.; Shivvers, Isaac; Zheng, WeiKang

2018-03-01

We present HST/WFC3 ultraviolet imaging in the F275W and F336W bands of the Type IIb SN 2001ig at an age of more than 14 years. A clear point source is detected at the site of the explosion, with m F275W = 25.39 ± 0.10 and m F336W = 25.88 ± 0.13 mag. Despite weak constraints on both the distance to the host galaxy NGC 7424 and the line-of-sight reddening to the supernova, this source matches the characteristics of an early B-type main-sequence star with 19,000 GMOS optical spectrum at an age of 6 years reveals a narrow He II λ4686 emission line, indicative of continuing interaction with a dense circumstellar medium at large radii from the progenitor. We review our findings on SN 2001ig in the context of binary evolution channels for stripped-envelope supernovae. Owing to the uncrowded nature of its environment in the ultraviolet, this study of SN 2001ig represents one of the cleanest detections to date of a surviving binary companion to a Type IIb supernova.

Highly reddened Type Ia supernova SN 2004ab: another case of anomalous extinction

Science.gov (United States)

Chakradhari, N. K.; Sahu, D. K.; Anupama, G. C.; Prabhu, T. P.

2018-02-01

We present optical photometric and spectroscopic data for supernova SN 2004ab, a highly reddened normal Type Ia supernova. The total reddening is estimated as E(B - V) = 1.70 ± 0.05 mag. The intrinsic decline-rate parameter Δm15(B)true is 1.27 ± 0.05, and the B-band absolute magnitude at maximum MB^{max} is -19.31 ± 0.25 mag. The host galaxy NGC 5054 is found to exhibit anomalous extinction with a very low value of RV = 1.41 ± 0.06 in the direction of SN 2004ab. The peak bolometric luminosity is derived as log L_bol^max = 43.10 ± 0.07 erg s-1. The photospheric velocity measured from the absorption minimum of the Si II λ6355 line shows a velocity gradient of \\dot{v} = 90 km s-1 d-1, indicating that SN 2004ab is a member of the high velocity gradient (HVG) subgroup. The ratio of the strengths of the Si II λ5972 and λ6355 absorption lines, R(Si II), is estimated as 0.37, while their pseudo-equivalent widths suggest that SN 2004ab belongs to the broad line (BL) type subgroup.

Application of 119Sn Moessbauer spectroscopy to investigations of RET2-X2-type phases

International Nuclear Information System (INIS)

Goerlich, E.

1991-01-01

Moessbauer spectroscopy of 119 Sn is an effective tool to study nuclear hyperfine interactions which in turn are important as a source of information complementary to that supplied by ''classical'' methods. However, particularly when the effects are subtle, experimental conditions as well as data analysis should be handled with care. The attention is devoted primarily to the finite absorber thickness effects. As examples serve our recent results obtained from investigations of ternary tetragonal phases of RET 2 X 2 -type. In EuPd 2 Si 2 mixed valent system 119 Sn was used as probe which detects the influence of Eu-valency change at a distant site of Si. Electrical resistivity measurements in CeNi 2 Sn 2 may indicate a Kondo-type behaviour while Moessbauer effect leads to the conclusion in favour of a magnetically ordered state. The analysis of resonance absorption spectra of CeAg 2 Sn 2 using a full transmission integral indicates the presence of a metallic β-tin in the sample, while data fitting within the thin absorber approximation has lead to the opposite conclusion. Neither in CeNi 2 Sn 2 nor in ErNi 2 Sn 2 the temperature dependence of the recoil free factors alone cannot explain the observed broadening of spectra at low temperatures. (author). 14 refs, 13 figs

Quench performance of a 4-m long Nb3Sn shell-type dipole coil

International Nuclear Information System (INIS)

Chlachidze, G.; Ambrosio, G.; Andreev, N.; Barzi, E.; Bossert, R.; Carcagno, R.; Kashikhin, V.S.; Kashikhin, V.V.; Lamm, M.J.; Nobrega, F.; Novitski, I.

2008-01-01

Fermilab has finished the first phase of Nb 3 Sn technology scale up by testing 2-m and 4-m long shell-type dipole coils in a 'magnetic mirror' configuration. The 2-m long coil, made of Powder-in-Tube (PIT) Nb 3 Sn strand, reached its short sample limit at a field level of 10 T. The 4-m long coil, made of advanced Nb 3 Sn strand based on the Restack Rod Process (RRP) of 108/127 design, has been recently fabricated and tested. Coil test results at 4.5 K and 2.2 K are reported and discussed

The curious case of SN 2011dn: A very peculiar type Ia supernova?

Science.gov (United States)

Rachubo, Alisa

Type Ia supernovae (SNe Ia) are excellent cosmological distance indicators due to the uniformity in their light curves, which led to the major discovery of the accelerated expansion of the universe. However, SNe Ia are not so uniform as one may expect, as there are many peculiar SNe Ia that exhibit differences in their photometric and spectroscopic behavior from normal SNe Ia. One of the goals of supernova cosmology today is to produce a cleaner sample of SNe Ia without these peculiar SNe Ia. Here we consider SN 2011dn, a peculiar SN Ia candidate. In 2011, Salvo, et al. carried out a preliminary analysis of a subset of the data prescribed here, and identified spectral and photometric peculiarities in this object's evolution that warranted further analysis. Here, we present a complete re-reduction and reanalysis of B, V,R, and I photometry of SN 2011dn obtained at Mount Laguna Observatory, spanning from 7 days before maximum light in B to 88 days past maximum light. In addition, we also consider total flux spectra from 9 days before maximum light to 4 days after maximum light, along with ultraviolet (UV) photometry obtained with the Swift telescope. From SN 2011dn's optical spectra, we find that SN 2011dn most closely resembles a SN 1991T-like type Ia supernova ('91T-like SN Ia). Such SNe Ia are typically more luminous than normal SNe Ia, and possess broader (i.e., they decline less rapidly than normal from maximum light) light curves. Their Deltam15(B) (drop in B magnitude 15 days after maximum light) are typically significantly less than the canonical value of 1.1, and can be as low as 0.8. In the earlier preliminary analysis, Salvo et al. measured a surprisingly high Deltam15(B) value for SN 2011dn, of ˜ 1.1. Since SN 2011dn was embedded in UGC 11501 (its host galaxy), however, it is possible that some of the light from the host galaxy was included in the photometric aperture, resulting in inaccurate photometric measurements. Here, in order to better isolate the

PHOTOMETRIC TYPE Ia SUPERNOVA CANDIDATES FROM THE THREE-YEAR SDSS-II SN SURVEY DATA

International Nuclear Information System (INIS)

Sako, Masao; Connolly, Brian; Gladney, Larry; Bassett, Bruce; Dilday, Benjamin; Cambell, Heather; Lampeitl, Hubert; Nichol, Robert C.; Frieman, Joshua A.; Kessler, Richard; Marriner, John; Miquel, Ramon; Schneider, Donald P.; Smith, Mathew; Sollerman, Jesper

2011-01-01

We analyze the three-year Sloan Digital Sky Survey II (SDSS-II) Supernova (SN) Survey data and identify a sample of 1070 photometric Type Ia supernova (SN Ia) candidates based on their multiband light curve data. This sample consists of SN candidates with no spectroscopic confirmation, with a subset of 210 candidates having spectroscopic redshifts of their host galaxies measured while the remaining 860 candidates are purely photometric in their identification. We describe a method for estimating the efficiency and purity of photometric SN Ia classification when spectroscopic confirmation of only a limited sample is available, and demonstrate that SN Ia candidates from SDSS-II can be identified photometrically with ∼91% efficiency and with a contamination of ∼6%. Although this is the largest uniform sample of SN candidates to date for studying photometric identification, we find that a larger spectroscopic sample of contaminating sources is required to obtain a better characterization of the background events. A Hubble diagram using SN candidates with no spectroscopic confirmation, but with host galaxy spectroscopic redshifts, yields a distance modulus dispersion that is only ∼20%-40% larger than that of the spectroscopically confirmed SN Ia sample alone with no significant bias. A Hubble diagram with purely photometric classification and redshift-distance measurements, however, exhibits biases that require further investigation for precision cosmology.

Photometric type Ia supernova candidates from the three-year SDSS-II SN survey data

Energy Technology Data Exchange (ETDEWEB)

Sako, Masao; /Pennsylvania U.; Bassett, Bruce; /South African Astron. Observ. /Cape Town U., Dept. Math.; Connolly, Brian; /Pennsylvania U.; Dilday, Benjamin; /Las Cumbres Observ. /UC, Santa Barbara /Rutgers U., Piscataway; Cambell, Heather; /Portsmouth U., ICG; Frieman, Joshua A.; /Chicago U. /Chicago U., KICP /Fermilab; Gladney, Larry; /Pennsylvania U.; Kessler, Richard; /Chicago U. /Chicago U., KICP; Lampeitl, Hubert; /Portsmouth U., ICG; Marriner, John; /Fermilab; Miquel, Ramon; /Barcelona, IFAE /ICREA, Barcelona /Portsmouth U., ICG

2011-07-01

We analyze the three-year Sloan Digital Sky Survey II (SDSS-II) Supernova (SN) Survey data and identify a sample of 1070 photometric Type Ia supernova (SN Ia) candidates based on their multiband light curve data. This sample consists of SN candidates with no spectroscopic confirmation, with a subset of 210 candidates having spectroscopic redshifts of their host galaxies measured while the remaining 860 candidates are purely photometric in their identification. We describe a method for estimating the efficiency and purity of photometric SN Ia classification when spectroscopic confirmation of only a limited sample is available, and demonstrate that SN Ia candidates from SDSS-II can be identified photometrically with {approx}91% efficiency and with a contamination of {approx}6%. Although this is the largest uniform sample of SN candidates to date for studying photometric identification, we find that a larger spectroscopic sample of contaminating sources is required to obtain a better characterization of the background events. A Hubble diagram using SN candidates with no spectroscopic confirmation, but with host galaxy spectroscopic redshifts, yields a distance modulus dispersion that is only {approx}20%-40% larger than that of the spectroscopically confirmed SN Ia sample alone with no significant bias. A Hubble diagram with purely photometric classification and redshift-distance measurements, however, exhibits biases that require further investigation for precision cosmology.

Optical, Near-IR, and X-Ray Observations of SN 2015J and Its Host Galaxy

Science.gov (United States)

Nucita, A. A.; De Paolis, F.; Saxton, R.; Testa, V.; Strafella, F.; Read, A.; Licchelli, D.; Ingrosso, G.; Convenga, F.; Boutsia, K.

2017-12-01

SN 2015J was discovered on 2015 April 27th and is classified as an SN IIn. At first, it appeared to be an orphan SN candidate, I.e., without any clear identification of its host galaxy. Here, we present an analysis of the observations carried out by the VLT 8 m class telescope with the FORS2 camera in the R band and the Magellan telescope (6.5 m) equipped with the IMACS Short-Camera (V and I filters) and the FourStar camera (Ks filter). We show that SN 2015J resides in what appears to be a very compact galaxy, establishing a relation between the SN event and its natural host. We also present and discuss archival and new X-ray data centered on SN 2015J. At the time of the supernova explosion, Swift/XRT observations were made and a weak X-ray source was detected at the location of SN 2015J. Almost one year later, the same source was unambiguously identified during serendipitous observations by Swift/XRT and XMM-Newton, clearly showing an enhancement of the 0.3-10 keV band flux by a factor ≃ 30 with respect to the initial state. Swift/XRT observations show that the source is still active in the X-rays at a level of ≃ 0.05 counts s-1. The unabsorbed X-ray luminosity derived from the XMM-Newton slew and SWIFT observations, {L}x≃ 5× {10}41 erg s-1, places SN 2015J among the brightest young supernovae in X-rays. Based on observations obtained with XMM-Newton, an ESA science mission with instruments and contributions directly funded by ESA Member States and NASA, with ESO Telescopes at the La Silla-Paranal Observatory under program ID 298.D-5016(A), and with the 6.5 m Magellan Telescopes located at Las Campanas Observatory, Chile. We also acknowledge the use of public data from the Swift data archive.

Large-Scale Surfactant-Free Synthesis of p-Type SnTe Nanoparticles for Thermoelectric Applications

Directory of Open Access Journals (Sweden)

Guang Han

2017-02-01

Full Text Available A facile one-pot aqueous solution method has been developed for the fast and straightforward synthesis of SnTe nanoparticles in more than ten gram quantities per batch. The synthesis involves boiling an alkaline Na2SnO2 solution and a NaHTe solution for short time scales, in which the NaOH concentration and reaction duration play vital roles in controlling the phase purity and particle size, respectively. Spark plasma sintering of the SnTe nanoparticles produces nanostructured compacts that have a comparable thermoelectric performance to bulk counterparts synthesised by more time- and energy-intensive methods. This approach, combining an energy-efficient, surfactant-free solution synthesis with spark plasma sintering, provides a simple, rapid, and inexpensive route to p-type SnTe nanostructured materials.

SN 2013ej IN M74: A LUMINOUS AND FAST-DECLINING TYPE II-P SUPERNOVA

International Nuclear Information System (INIS)

Huang, Fang; Wang, Xiaofeng; Chen, Juncheng; Mo, Jun; Zhao, Xulin; Zhang, Jujia; Brown, Peter J.; Zampieri, Luca; Pumo, Maria Letizia; Zhang, Tianmeng

2015-01-01

We present extensive ultraviolet, optical, and near-infrared observations of the Type IIP supernova (SN IIP) 2013ej in the nearby spiral galaxy M74. The multicolor light curves, spanning from ∼8–185 days after explosion, show that it has a higher peak luminosity (i.e., M V ∼ −17.83 mag at maximum light), a faster post-peak decline, and a shorter plateau phase (i.e., ∼50 days) compared to the normal Type IIP SN 1999em. The mass of 56 Ni is estimated as 0.02 ± 0.01 M ⊙ from the radioactive tail of the bolometric light curve. The spectral evolution of SN 2013ej is similar to that of SN 2004et and SN 2007od, but shows a larger expansion velocity (i.e., v Fe ii  ∼ 4600 km s −1 at t ∼ 50 days) and broader line profiles. In the nebular phase, the emission of the Hα line displays a double-peak structure, perhaps due to the asymmetric distribution of 56 Ni produced in the explosion. With the constraints from the main observables such as bolometric light curve, expansion velocity, and photospheric temperature of SN 2013ej, we performed hydrodynamical simulations of the explosion parameters, yielding the total explosion energy as ∼0.7× 10 51 erg, the radius of the progenitor as ∼600 R ⊙ , and the ejected mass as ∼10.6 M ⊙ . These results suggest that SN 2013ej likely arose from a red supergiant with a mass of 12–13 M ⊙ immediately before the explosion

Quench performance of a 4-m long Nb3Sn shell-type dipole coil

Energy Technology Data Exchange (ETDEWEB)

Chlachidze, G.; Ambrosio, G.; Andreev, N.; Barzi, E.; Bossert, R.; Carcagno, R.; Kashikhin, V.S.; Kashikhin, V.V.; Lamm, M.J.; Nobrega, F.; Novitski, I.; /Fermilab

2008-08-01

Fermilab has finished the first phase of Nb{sub 3}Sn technology scale up by testing 2-m and 4-m long shell-type dipole coils in a 'magnetic mirror' configuration. The 2-m long coil, made of Powder-in-Tube (PIT) Nb{sub 3}Sn strand, reached its short sample limit at a field level of 10 T. The 4-m long coil, made of advanced Nb{sub 3}Sn strand based on the Restack Rod Process (RRP) of 108/127 design, has been recently fabricated and tested. Coil test results at 4.5 K and 2.2 K are reported and discussed.

Spectroscopic Observations and Analysis of the Unusual Type Ia SN1999ac

International Nuclear Information System (INIS)

Garavini, G.; Aldering, G.; Amadon, A.; Amanullah, R.; Astier, P.; Balland, C.; Blanc, G.; Conley, A.; Dahlen, T.; Deustua, S.E.; Ellis, R.; Fabbro, S.; Fadeyev, V.; Fan, X.; Folatelli, G.; Frye, B.; Gates, E.L.; Gibbons, R.; Goldhaber, G.; Goldman, B.; Goobar, A.; Groom, D.E.; Haissinski, J.; Hardin, D.; Hook, I.; Howell, D.A.; Kent, S.; Kim, A.G.; Knop, R.A.; Kowalski, M.; Kuznetsova, N.; Lee, B.C.; Lidman, C.; Mendez, J.; Miller, G.J.; Moniez, M.; Mouchet, M.; Mourao, A.; Newberg, H.; Nobili, S.; Nugent, P.E.; Pain, R.; Perdereau, O.; Perlmutter, S.; Quimby, R.; Regnault, N.; Rich, J.; Richards, G.T.; Ruiz-Lapuente, P.; Schaefer, B.E.; Schahmaneche, K.; Smith, E.; Spadafora, A.L.; Stanishev, V.; Thomas, R.C.; Walton, N.A.; Wang, L.; Wood-Vasey, W.M.

2005-01-01

The authors present optical spectra of the peculiar Type Ia supernova (SN Ia) 1999ac. The data extend from -15 to +42 days with respect to B-band maximum and reveal an event that is unusual in several respects. prior to B-band maximum, the spectra resemble those of SN 1999aa, a slowly declining event, but possess stronger Si II and Ca II signatures (more characteristic of a spectroscopically normal SN). Spectra after B-band maximum appear more normal. The expansion velocities inferred from the Iron lines appear to be lower than average; whereas, the expansion velocity inferred from Calcium H and K are higher than average. The expansion velocities inferred from the Iron lines appear to be lower than average; whereas, the expansion velocity inferred from Calcium H and K are higher than average. The expansion velocities inferred from Si II are among the slowest ever observed, though SN 1999ac is not particularly dim. The analysis of the parameters v 10 (Si II), R(Si II), v, and Δm 15 further underlines the unique characteristics of SN 1999ac. They find convincing evidence of C II λ6580 in the day -15 spectrum with ejection velocity v > 16,000 km s -1 , but this signature disappears by day -9. This rapid evolution at early times highlights the importance of extremely early-time spectroscopy

Premaximum observations of the type Ia SN 1990N

International Nuclear Information System (INIS)

Leibundgut, B.; Kirshner, R.P.; Filippenko, A.V.; Shields, J.C.; Foltz, C.B.; Phillips, M.M.; Sonneborn, G.

1991-01-01

Spectroscopic and photometric observations of SN 1990N were obtained at ultraviolet and optical wavelengths, beginning 14 days before maximum light. The early observations reveal important differences from spectra of SN Ia's around maximum light. Photometry and spectroscopy obtained after maximum show that SN 1990N is a typical SN Ia and that most of the observed differences are due to the early epoch of the observations. The most significant characteristics are (1) the high velocities of Ca and Si up to 22,000 km/s; (2) the presence of Co and Fe 2 weeks before maximum; and (3) the more rapid increase in the UV flux compared to the optical. The most popular models for white dwarf deflagration that have provided the standard interpretation for SN Ia's at maximum light do not reproduce the high velocities of Ca II and Si II lines observed in SN 1990N. 37 refs

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

SN 2015as: a low-luminosity Type IIb supernova without an early light-curve peak

Science.gov (United States)

Gangopadhyay, Anjasha; Misra, Kuntal; Pastorello, A.; Sahu, D. K.; Tomasella, L.; Tartaglia, L.; Singh, Mridweeka; Dastidar, Raya; Srivastav, S.; Ochner, P.; Brown, Peter J.; Anupama, G. C.; Benetti, S.; Cappellaro, E.; Kumar, Brajesh; Kumar, Brijesh; Pandey, S. B.

2018-05-01

We present results of the photometric (from 3 to 509 d post-explosion) and spectroscopic (up to 230 d post-explosion) monitoring campaign of the He-rich Type IIb supernova (SN) 2015as. The (B - V) colour evolution of SN 2015as closely resemble those of SN 2008ax, suggesting that SN 2015as belongs to the SN IIb subgroup that does not show the early, short-duration photometric peak. The light curve of SN 2015as reaches the B-band maximum about 22 d after the explosion, at an absolute magnitude of -16.82 ± 0.18 mag. At ˜75 d after the explosion, its spectrum transitions from that of a SN II to a SN Ib. P Cygni features due to He I lines appear at around 30 d after explosion, indicating that the progenitor of SN 2015as was partially stripped. For SN 2015as, we estimate a 56Ni mass of ˜0.08 M⊙ and ejecta mass of 1.1-2.2 M⊙, which are similar to the values inferred for SN 2008ax. The quasi-bolometric analytical light-curve modelling suggests that the progenitor of SN 2015as has a modest mass (˜0.1 M⊙), a nearly compact (˜0.05 × 1013 cm) H envelope on top of a dense, compact (˜2 × 1011 cm) and a more massive (˜1.2 M⊙) He core. The analysis of the nebular phase spectra indicates that ˜0.44 M⊙ of O is ejected in the explosion. The intensity ratio of the [Ca II]/[O I] nebular lines favours either a main-sequence progenitor mass of ˜15 M⊙ or a Wolf-Rayet star of 20 M⊙.

The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

Energy Technology Data Exchange (ETDEWEB)

Singh, Niraj Kumar; Bathula, Sivaiah; Gahtori, Bhasker [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tyagi, Kriti [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Acdemy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (NPL) Campus, New Delhi (India); Haranath, D. [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2016-05-25

Tin selenide (SnSe) based thermoelectric materials are being explored for making inexpensive and efficient thermoelectric devices with improved thermoelectric efficiency. As both Sn and Se are earth abundant and relatively inexpensive and these alloys do not involve toxic materials, such as lead and expensive tellurium. Hence, in the present study, we have synthesized SnSe doped with 2 at% of aluminium (Al), lead (Pb), indium (In) and copper (Cu) individually, which is not reported in literature. Out of these, Cu doped SnSe resulted in enhancement of figure-of-merit (zT) of ∼0.7 ± 0.02 at 773 K, synthesized employing conventional fusion method followed by spark plasma sintering. This enhancement in zT is ∼16% over the existing state-of-the-art value for p-type SnSe alloy doped with expensive Ag. This enhancement in ZT is primarily due to the presence of Cu{sub 2}Se second phase associated with intrinsic nanostructure formation of SnSe. This enhancement has been corroborated with the microstructural characterization using field emission scanning electron microscopy and X-ray diffraction studies. Also, Cu doped SnSe exhibited a higher value of carrier concentration in comparison to other samples doped with Al, Pb and In. Further, the compatibility factor of Cu doped SnSe alloys exhibited value of 1.62 V{sup −1} at 773 K and it is suitable to segment with most of the novel TE materials for obtaining the higher thermoelectric efficiencies. - Highlights: • Tin selenide (SnSe) doped with non-toxic and inexpensive dopants. • Synthesized highly dense SnSe employing Spark plasma sintering. • Enhanced thermoelectric compatibility factor of SnSe. • Enhanced thermoelectric performance of SnSe doped with Copper.

SN 2013ej IN M74: A LUMINOUS AND FAST-DECLINING TYPE II-P SUPERNOVA

Energy Technology Data Exchange (ETDEWEB)

Huang, Fang [Department of Astronomy, Beijing Normal University, Beijing 100875 (China); Wang, Xiaofeng; Chen, Juncheng; Mo, Jun; Zhao, Xulin [Physics Department and Tsinghua Center for Astrophysics, Tsinghua University, Beijing 100084 (China); Zhang, Jujia [Yunnan Observatories, Chinese Academy of Sciences, Kunming 650011 (China); Brown, Peter J. [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A. and M. University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Zampieri, Luca [INAF-Osservatorio Astronomico di Padova, Vicolo dell’Osservatorio 5, I-35122 Padova (Italy); Pumo, Maria Letizia [INAF-Osservatorio Astronomico di Palermo “Giuseppe S. Vaiana,” Piazza del Parlamento 1, I-90134 Palermo (Italy); Zhang, Tianmeng, E-mail: huangfang@mail.bnu.edu.cn, E-mail: wang_xf@mail.tsinghua.edu.cn [Key Laboratory of Optical Astronomy, National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China)

2015-07-01

We present extensive ultraviolet, optical, and near-infrared observations of the Type IIP supernova (SN IIP) 2013ej in the nearby spiral galaxy M74. The multicolor light curves, spanning from ∼8–185 days after explosion, show that it has a higher peak luminosity (i.e., M{sub V} ∼ −17.83 mag at maximum light), a faster post-peak decline, and a shorter plateau phase (i.e., ∼50 days) compared to the normal Type IIP SN 1999em. The mass of {sup 56}Ni is estimated as 0.02 ± 0.01 M{sub ⊙} from the radioactive tail of the bolometric light curve. The spectral evolution of SN 2013ej is similar to that of SN 2004et and SN 2007od, but shows a larger expansion velocity (i.e., v{sub Fe} {sub ii} ∼ 4600 km s{sup −1} at t ∼ 50 days) and broader line profiles. In the nebular phase, the emission of the Hα line displays a double-peak structure, perhaps due to the asymmetric distribution of {sup 56}Ni produced in the explosion. With the constraints from the main observables such as bolometric light curve, expansion velocity, and photospheric temperature of SN 2013ej, we performed hydrodynamical simulations of the explosion parameters, yielding the total explosion energy as ∼0.7× 10{sup 51} erg, the radius of the progenitor as ∼600 R{sub ⊙}, and the ejected mass as ∼10.6 M{sub ⊙}. These results suggest that SN 2013ej likely arose from a red supergiant with a mass of 12–13 M{sub ⊙} immediately before the explosion.

METAMORPHOSIS OF SN 2014C: DELAYED INTERACTION BETWEEN A HYDROGEN POOR CORE-COLLAPSE SUPERNOVA AND A NEARBY CIRCUMSTELLAR SHELL

International Nuclear Information System (INIS)

Milisavljevic, D.; Margutti, R.; Kamble, A.; Patnaude, D. J.; Raymond, J. C.; Challis, P.; Drout, M. R.; Grindlay, J. E.; Kirshner, R. P.; Lunnan, R.; Miller, G. F.; Parrent, J. T.; Sanders, N. E.; Eldridge, J. J.; Fong, W.; Bietenholz, M.; Chornock, R.; Fransson, C.; Fesen, R. A.; Mackey, J.

2015-01-01

We present optical observations of supernova SN 2014C, which underwent an unprecedented slow metamorphosis from H-poor type Ib to H-rich type IIn over the course of one year. The observed spectroscopic evolution is consistent with the supernova having exploded in a cavity before encountering a massive shell of the progenitor star’s stripped hydrogen envelope. Possible origins for the circumstellar shell include a brief Wolf–Rayet fast wind phase that overtook a slower red supergiant wind, eruptive ejection, or confinement of circumstellar material by external influences of neighboring stars. An extended high velocity Hα absorption feature seen in near-maximum light spectra implies that the progenitor star was not completely stripped of hydrogen at the time of core collapse. Archival pre-explosion Subaru Telescope Suprime-Cam and Hubble Space Telescope Wide Field Planetary Camera 2 images of the region obtained in 2009 show a coincident source that is most likely a compact massive star cluster in NGC 7331 that hosted the progenitor system. By comparing the emission properties of the source with stellar population models that incorporate interacting binary stars we estimate the age of the host cluster to be 30–300 Myr, and favor ages closer to 30 Myr in light of relatively strong Hα emission. SN 2014C is the best observed member of a class of core-collapse supernovae that fill the gap between events that interact strongly with dense, nearby environments immediately after explosion and those that never show signs of interaction. Better understanding of the frequency and nature of this intermediate population can contribute valuable information about the poorly understood final stages of stellar evolution

METAMORPHOSIS OF SN 2014C: DELAYED INTERACTION BETWEEN A HYDROGEN POOR CORE-COLLAPSE SUPERNOVA AND A NEARBY CIRCUMSTELLAR SHELL

Energy Technology Data Exchange (ETDEWEB)

Milisavljevic, D.; Margutti, R.; Kamble, A.; Patnaude, D. J.; Raymond, J. C.; Challis, P.; Drout, M. R.; Grindlay, J. E.; Kirshner, R. P.; Lunnan, R.; Miller, G. F.; Parrent, J. T.; Sanders, N. E. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA, 02138 (United States); Eldridge, J. J. [Department of Physics, University of Auckland, Private Bag 92019, Auckland (New Zealand); Fong, W. [Steward Observatory, University of Arizona, 933 N. Cherry Avenue, Tucson, AZ 85721 (United States); Bietenholz, M. [Hartebeesthoek Radio Observatory, P.O. Box 443, Krugersdorp 1740 (South Africa); Chornock, R. [Astrophysical Institute, Department of Physics and Astronomy, 251B Clippinger Lab, Ohio University, Athens, OH 45701 (United States); Fransson, C. [Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE106 91 Stockholm (Sweden); Fesen, R. A. [Department of Physics and Astronomy, Dartmouth College, 6127 Wilder Lab, Hanover, NH 03755 (United States); Mackey, J., E-mail: dmilisav@cfa.harvard.edu [Argelander-Institut für Astronomie, Auf dem Hgel 71, D-53121 Bonn (Germany); and others

2015-12-20

We present optical observations of supernova SN 2014C, which underwent an unprecedented slow metamorphosis from H-poor type Ib to H-rich type IIn over the course of one year. The observed spectroscopic evolution is consistent with the supernova having exploded in a cavity before encountering a massive shell of the progenitor star’s stripped hydrogen envelope. Possible origins for the circumstellar shell include a brief Wolf–Rayet fast wind phase that overtook a slower red supergiant wind, eruptive ejection, or confinement of circumstellar material by external influences of neighboring stars. An extended high velocity Hα absorption feature seen in near-maximum light spectra implies that the progenitor star was not completely stripped of hydrogen at the time of core collapse. Archival pre-explosion Subaru Telescope Suprime-Cam and Hubble Space Telescope Wide Field Planetary Camera 2 images of the region obtained in 2009 show a coincident source that is most likely a compact massive star cluster in NGC 7331 that hosted the progenitor system. By comparing the emission properties of the source with stellar population models that incorporate interacting binary stars we estimate the age of the host cluster to be 30–300 Myr, and favor ages closer to 30 Myr in light of relatively strong Hα emission. SN 2014C is the best observed member of a class of core-collapse supernovae that fill the gap between events that interact strongly with dense, nearby environments immediately after explosion and those that never show signs of interaction. Better understanding of the frequency and nature of this intermediate population can contribute valuable information about the poorly understood final stages of stellar evolution.

New ternary superconductors of the YPd2Sn-type

International Nuclear Information System (INIS)

Ishikawa, M.; Jorda, J.L.; Junod, A.

1982-01-01

From the specific heat and electrical resistivity experiments on several new superconducting Heusler compounds of the YPd 2 Sn-type, it is concluded that these compounds are strong-coupling superconductors with d-character. Most of the compounds with the heavy rare earths substituted for Y order magnetically at a relatively low temperature (< or approx. 5 K) and the compounds of Tm, Yb and Lu exhibit superconductivity below about 3 K. A possible coexistence of superconductivity and magnetism in these compounds is discussed. (orig.)

SN 2017dio: A Type-Ic Supernova Exploding in a Hydrogen-rich Circumstellar Medium

Science.gov (United States)

Kuncarayakti, Hanindyo; Maeda, Keiichi; Ashall, Christopher J.; Prentice, Simon J.; Mattila, Seppo; Kankare, Erkki; Fransson, Claes; Lundqvist, Peter; Pastorello, Andrea; Leloudas, Giorgos; Anderson, Joseph P.; Benetti, Stefano; Bersten, Melina C.; Cappellaro, Enrico; Cartier, Régis; Denneau, Larry; Della Valle, Massimo; Elias-Rosa, Nancy; Folatelli, Gastón; Fraser, Morgan; Galbany, Lluís; Gall, Christa; Gal-Yam, Avishay; Gutiérrez, Claudia P.; Hamanowicz, Aleksandra; Heinze, Ari; Inserra, Cosimo; Kangas, Tuomas; Mazzali, Paolo; Melandri, Andrea; Pignata, Giuliano; Rest, Armin; Reynolds, Thomas; Roy, Rupak; Smartt, Stephen J.; Smith, Ken W.; Sollerman, Jesper; Somero, Auni; Stalder, Brian; Stritzinger, Maximilian; Taddia, Francesco; Tomasella, Lina; Tonry, John; Weiland, Henry; Young, David R.

2018-02-01

SN 2017dio shows both spectral characteristics of a type-Ic supernova (SN) and signs of a hydrogen-rich circumstellar medium (CSM). Prominent, narrow emission lines of H and He are superposed on the continuum. Subsequent evolution revealed that the SN ejecta are interacting with the CSM. The initial SN Ic identification was confirmed by removing the CSM interaction component from the spectrum and comparing with known SNe Ic and, reversely, adding a CSM interaction component to the spectra of known SNe Ic and comparing them to SN 2017dio. Excellent agreement was obtained with both procedures, reinforcing the SN Ic classification. The light curve constrains the pre-interaction SN Ic peak absolute magnitude to be around {M}g=-17.6 mag. No evidence of significant extinction is found, ruling out a brighter luminosity required by an SN Ia classification. These pieces of evidence support the view that SN 2017dio is an SN Ic, and therefore the first firm case of an SN Ic with signatures of hydrogen-rich CSM in the early spectrum. The CSM is unlikely to have been shaped by steady-state stellar winds. The mass loss of the progenitor star must have been intense, \\dot{M}∼ 0.02{({ε }{{H}α }/0.01)}-1 ({v}{wind}/500 km s‑1) ({v}{shock}/10,000 km s‑1)‑3 M ⊙ yr‑1, peaking at a few decades before the SN. Such a high mass-loss rate might have been experienced by the progenitor through eruptions or binary stripping. Based on observations made with the NOT, operated by the Nordic Optical Telescope Scientific Association at the Observatorio del Roque de los Muchachos, La Palma, Spain, of the Instituto de Astrofisica de Canarias. This work is based (in part) on observations collected at the European Organisation for Astronomical Research in the Southern Hemisphere, Chile as part of PESSTO, (the Public ESO Spectroscopic Survey for Transient Objects Survey) ESO program 188.D-3003, 191.D-0935, 197.D-1075. Based on observations made with the Liverpool Telescope operated on the

PRE-DISCOVERY AND FOLLOW-UP OBSERVATIONS OF THE NEARBY SN 2009nr: IMPLICATIONS FOR PROMPT TYPE Ia SUPERNOVAE

International Nuclear Information System (INIS)

Khan, Rubab; Stanek, K. Z.; Beacom, J. F.; Szczygiel, D. M.; Mogren, K.; Eastman, J. D.; Martini, P.; Stoll, R.; Prieto, J. L.; Pojmanski, G.; Pilecki, B.

2011-01-01

We present photometric and spectroscopic observations of the Type Ia supernova SN 2009nr in UGC 8255 (z = 0.0122). Following the discovery announcement at what turned out to be 10 days after peak, we detected it at V ≅15.7 mag in data collected by the All-Sky Automated Survey (ASAS) North telescope 2 weeks prior to the peak, and then followed it up with telescopes ranging in aperture from 10 cm to 6.5 m. Using early photometric data available only from ASAS, we find that the supernova is similar to the overluminous Type Ia SN 1991T, with a peak at M V ≅ -19.6 mag, and a slow decline rate of Δm 15 (B) ≅ 0.95 mag. The early post-maximum spectra closely resemble those of SN 1991T, while the late-time spectra are more similar to those of normal Type Ia supernovae (SNe Ia). Interestingly, SN 2009nr has a projected distance of 13.0 kpc (∼4.3 disk scale lengths) from the nucleus of the small star-forming host galaxy UGC 8255. This indicates that the progenitor of SN 2009nr is not associated with a young stellar population, calling into question the conventional association of luminous SNe Ia with the 'prompt' component directly correlated with current star formation. The pre-discovery observation of SN 2009nr using ASAS demonstrates the science utility of high-cadence all sky surveys conducted using small telescopes for the discovery of nearby (d ∼< 50 Mpc) supernovae.

SN2-type ring opening of substituted-N-tosylaziridines with zinc (II ...

Indian Academy of Sciences (India)

tion proceeds via an SN2-type pathway and the partial racemization of the starting substrate and the product was effectively .... 95:5, flow rate = 1.0 mL/min; tR 1: 25.33 min (minor), ... 2D (1H-1H COSY) and D2O exchange experiments in.

No Evidence of Circumstellar Gas Surrounding Type Ia Supernova SN 2017cbv

Science.gov (United States)

Ferretti, Raphael; Amanullah, Rahman; Bulla, Mattia; Goobar, Ariel; Johansson, Joel; Lundqvist, Peter

2017-12-01

Nearby type Ia supernovae (SNe Ia), such as SN 2017cbv, are useful events to address the question of what the elusive progenitor systems of the explosions are. Hosseinzadeh et al. suggested that the early blue excess of the light curve of SN 2017cbv could be due to the supernova ejecta interacting with a non-degenerate companion star. Some SN Ia progenitor models suggest the existence of circumstellar (CS) environments in which strong outflows create low-density cavities of different radii. Matter deposited at the edges of the cavities should be at distances at which photoionization due to early ultraviolet (UV) radiation of SNe Ia causes detectable changes to the observable Na I D and Ca II H&K absorption lines. To study possible narrow absorption lines from such material, we obtained a time series of high-resolution spectra of SN 2017cbv at phases between ‑14.8 and +83 days with respect to B-band maximum, covering the time at which photoionization is predicted to occur. Both narrow Na I D and Ca II H&K are detected in all spectra, with no measurable changes between the epochs. We use photoionization models to rule out the presence of Na I and Ca II gas clouds along the line of sight of SN 2017cbv between ∼8 × 1016–2 × 1019 cm and ∼1015–1017 cm, respectively. Assuming typical abundances, the mass of a homogeneous spherical CS gas shell with radius R must be limited to {M}{{H} {{I}}}{CSM}R/{10}17[{cm}])}2 {M}ȯ . The bounds point to progenitor models that deposit little gas in their CS environment.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

SN 2014J at M82 - I. A middle-class Type Ia supernova by all spectroscopic metrics

Science.gov (United States)

Galbany, L.; Moreno-Raya, M. E.; Ruiz-Lapuente, P.; González Hernández, J. I.; Méndez, J.; Vallely, P.; Baron, E.; Domínguez, I.; Hamuy, M.; López-Sánchez, A. R.; Mollá, M.; Catalán, S.; Cooke, E. A.; Fariña, C.; Génova-Santos, R.; Karjalainen, R.; Lietzen, H.; McCormac, J.; Riddick, F. C.; Rubiño-Martín, J. A.; Skillen, I.; Tudor, V.; Vaduvescu, O.

2016-03-01

We present the intensive spectroscopic follow up of the Type Ia supernova (SN Ia) 2014J in the starburst galaxy M82. Twenty-seven optical spectra have been acquired from 2014 January 22 to September 1 with the Isaac Newton and William Herschel Telescopes. After correcting the observations for the recession velocity of M82 and for Milky Way and host galaxy extinction, we measured expansion velocities from spectral line blueshifts and pseudo-equivalent width of the strongest features in the spectra, which gives an idea on how elements are distributed within the ejecta. We position SN 2014J in the Benetti, Branch et al. and Wang et al. diagrams. These diagrams are based on properties of the Si II features and provide dynamical and chemical information about the SN ejecta. The nearby SN 2011fe, which showed little evidence for reddening in its host galaxy, is shown as a reference for comparisons. SN 2014J is a border-line object between the Core-normal and Broad-line groups, which corresponds to an intermediate position between low-velocity gradient and high-velocity gradient objects. SN 2014J follows the R(Si II)-Δm15 correlation, which confirms its classification as a relatively normal SN Ia. Our description of the SN Ia in terms of the evolution of the pseudo-equivalent width of various ions as well as the position in the various diagrams put this specific SN Ia into the overall sample of SN Ia.

The high-temperature modification of LuAgSn and high-pressure high-temperature experiments on DyAgSn, HoAgSn, and YbAgSn

Energy Technology Data Exchange (ETDEWEB)

Heying, B.; Rodewald, U.C.; Hermes, W.; Schappacher, F.M.; Riecken, J.F.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Muenchen Univ. (Germany). Dept. fuer Chemie und Biochemie; Sebastian, C.P. [Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany)

2008-02-15

The high-temperature modification of LuAgSn was obtained by arc-melting an equiatomic mixture of the elements followed by quenching the melt on a water-cooled copper crucible. HT-LuAgSn crystallizes with the NdPtSb-type structure, space group P6{sub 3}mc: a = 463.5(1), c = 723.2(1) pm, wR2 = 0.0270, 151 F{sup 2}, and 11 variables. The silver and tin atoms build up two-dimensional, puckered [Ag{sub 3}Sn{sub 3}] networks (276 pm Ag-Sn) that are charge-balanced and separated by the lutetium atoms. The Ag-Sn distances between the [Ag{sub 3}Sn{sub 3}] layers of 294 pm are much longer. Single crystals of isotypic DyAgSn (a = 468.3(1), c = 734.4(1) pm, wR2 = 0.0343, 411 F{sup 2}, and 11 variables) and HoAgSn (a = 467.2(1), c = 731.7(2) pm, wR2 = 0.0318, 330 F{sup 2}, and 11 variables) were obtained from arc-melted samples. Under high-pressure (up to 12.2 GPa) and high-temperature (up to 1470 K) conditions, no transitions to a ZrNiAl-related phase have been observed for DyAgSn, HoAgSn, and YbAgSn. HT-TmAgSn shows Curie-Weiss paramagnetism with {mu}{sub eff} = 7.53(1) {mu}{sub B}/Tm atom and {theta}P = -15.0(5) K. No magnetic ordering was evident down to 3 K. HT-LuAgSn is a Pauli paramagnet. Room-temperature {sup 119}Sn Moessbauer spectra of HT-TmAgSn and HT-LuAgSn show singlet resonances with isomer shifts of 1.78(1) and 1.72(1) mm/s, respectively. (orig.)

Experimental investigation of the ternary system Ni–Pd–Sn with special focus on the B8-type phase

International Nuclear Information System (INIS)

Jandl, Isabella; Ipser, Herbert; Richter, Klaus W.

2015-01-01

The ternary alloy system Ni–Pd–Sn was investigated experimentally from 700 °C upwards, with special focus on the general NiAs-type compounds. The phase diagram and crystallographic parameters were studied by means of powder X-ray diffraction (XRD), differential thermal analysis (DTA), light optical microscopy (LOM) and scanning electron microscopy (SEM) in combination with energy dispersive X-ray spectroscopy (EDX). An isothermal section at 700 °C was constructed wherein a continuous phase field between the binary NiAs-type compounds γ (PdSn) and Ni 3 Sn 2 (high temperature modification) was detected. A series of samples throughout this phase field was used to investigate lattice parameter variations, occupation of the atomic sites and the melting behaviour. A partial ordering of the transition metals was observed. Moreover, three vertical sections at 30 at.%, 40 at.% and 50 at.% Sn were determined. Altogether, seven ternary invariant phase reactions were discovered: two ternary eutectic reactions, one ternary eutectoid reaction, three ternary transition reactions and one maximum. A complete reaction scheme for the investigated temperature range is given. Furthermore, a partial liquidus surface projection, except for the low-temperature Sn-rich region, was developed. - Highlights: • Detailed study of the ternary alloy system Ni–Pd–Sn. • 1 Isotherm, 3 vertical sections, a partial liquidus projection and a reaction scheme. • A continuous phase field, between γ and Ni 3 Sn 2 , was discovered. • Lattice parameters and structural features in this phase field were analysed. • A partial order of Ni and Pd in this phase field was observed

The crystal structure of (Nb$_{0.75}$Cu$_{0.25}$)Sn$_{2}$ in the Cu-Nb-Sn system

CERN Document Server

Martin, Stefan; Nolze, Gert; Leineweber, Andreas; Leaux, Floriane; Scheuerlein, Christian

2017-01-01

During the processing of superconducting Nb$_{3}$Sn wire, several intermediate intermetallic phases including a previously encountered Cu-Nb-Sn phase show up. The yet unknown crystal structure of this phase is now identified by a combination of different experimental techniques and database search to be of the hexagonal NiMg2 type with a proposed composition of about (Nb0.75Cu0.25)Sn2. The structure determination started from an evaluation of the lattice parameters from EBSD Kikuchi patterns from quenched material suggesting hexagonal or orthorhombic symmetry. A database search then led to the hexagonal NiMg2 type structure, the presence of which was confirmed by a Rietveld analysis on the basis of high energy synchrotron X-ray powder diffraction data. Assuming a partial substitution of Nb in orthorhombic NbSn2 by Cu, the change of the valence electron concentration provokes a structural transformation from the CuMg2 type for NbSn2 to the NiMg2 type for (Nb0.75Cu0.25)Sn2. In the previous literature the (Nb0.7...

Astronomy in Denver: The polarization evolution of the luminous Type Ib SN 2012au

Science.gov (United States)

Hoffman, Jennifer L.; DeKlotz, Sophia; Cooper, Kevin; Slay, Hannah; Williams, George Grant; Supernova Spectropolarimetry Project (SNSPOL)

2018-06-01

We present an analysis of the spectropolarimetric behavior of the Type Ib SN 2012au over the first 315 days of its evolution. Our data were obtained by the Supernova Spectropolarimetry Project using the CCD Imaging/Spectropolarimeter (SPOL) at the 61" Kuiper, the 90" Bok, and the 6.5-m MMT telescopes. SN 2012au was a very energetic, luminous, and slowly evolving event that may represent an intermediate case between normal core-collapse supernovae and the enigmatic superluminous supernovae. Strong, time-variable line polarization signatures, particularly in the He Il λ5876 line, support previous hypotheses of an asymmetric explosion and allow us to trace detailed structures within the supernova ejecta as they change over time. We compare the polarimetric evolution of the continuum and emission lines in SN 2012au and compare its behavior with that of other bright and polarimetrically variable supernovae.

Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

Directory of Open Access Journals (Sweden)

E. Karageorgou

2014-11-01

Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.

ON THE PROGENITOR OF THE TYPE II-PLATEAU SN 2008cn in NGC 4603

International Nuclear Information System (INIS)

Elias-Rosa, Nancy; Van Dyk, Schuyler D.; Li, Weidong; Filippenko, Alexei V.; Foley, Ryan J.; Smith, Nathan; Morrell, Nidia; Gonzalez, Sergio; Hamuy, Mario; Cuillandre, Jean-Charles

2009-01-01

A trend is emerging regarding the progenitor stars that give rise to the most common core-collapse supernovae (SNe), those of Type II-Plateau (II-P): they generally appear to be red supergiants with a limited range of initial masses, ∼8-16 M sun . Here, we consider another example, SN 2008cn, in the nearly face-on spiral galaxy NGC 4603. Even with limited photometric data, it appears that SN 2008cn is not a normal SN II-P, but is of the high-luminosity subclass. Through comparison of pre- and post-explosion images obtained with the Wide Field and Planetary Camera 2 on board the Hubble Space Telescope, we have isolated a supergiant star prior to explosion at nearly the same position as the SN. We provide evidence that this supergiant may well be the progenitor of the SN, although this identification is not entirely unambiguous. This is exacerbated by the distance to the host galaxy, 33.3 Mpc, making SN 2008cn the most distant SN II-P yet for which an attempt has been made to identify a progenitor star in pre-SN images. The progenitor candidate has a more yellow color ([V - I] 0 = 0.98 mag and T eff = 5200 ± 300 K) than generally would be expected and, if a single star, would require that it exploded during a 'blue loop' evolutionary phase, which is theoretically not expected to occur. Nonetheless, we estimate an initial mass of M ini = 15 ± 2 M sun for this star, which is within the expected mass range for SN II-P progenitors. The yellower color could also arise from the blend of two or more stars, such as a red supergiant and a brighter, blue supergiant. Such a red supergiant hidden in this blend could instead be the progenitor and would also have an initial mass within the expected progenitor mass range. Furthermore, the yellow supergiant could be in a massive, interacting binary system, analogous to the possible yellow supergiant progenitor of the high-luminosity SN II-P 2004et. Finally, if the yellow supergiant is not the progenitor, or is not a stellar

Very-high-energy gamma-ray observations of the Type Ia Supernova SN 2014J with the MAGIC telescopes

Science.gov (United States)

Ahnen, M. L.; Ansoldi, S.; Antonelli, L. A.; Antoranz, P.; Arcaro, C.; Babic, A.; Banerjee, B.; Bangale, P.; Barres de Almeida, U.; Barrio, J. A.; Becerra González, J.; Bednarek, W.; Bernardini, E.; Berti, A.; Biasuzzi, B.; Biland, A.; Blanch, O.; Bonnefoy, S.; Bonnoli, G.; Borracci, F.; Bretz, T.; Carosi, R.; Carosi, A.; Chatterjee, A.; Colin, P.; Colombo, E.; Contreras, J. L.; Cortina, J.; Covino, S.; Cumani, P.; Da Vela, P.; Dazzi, F.; De Angelis, A.; De Lotto, B.; de Oña Wilhelmi, E.; Di Pierro, F.; Doert, M.; Domínguez, A.; Dominis Prester, D.; Dorner, D.; Doro, M.; Einecke, S.; Eisenacher Glawion, D.; Elsaesser, D.; Engelkemeier, M.; Fallah Ramazani, V.; Fernández-Barral, A.; Fidalgo, D.; Fonseca, M. V.; Font, L.; Frantzen, K.; Fruck, C.; Galindo, D.; García López, R. J.; Garczarczyk, M.; Garrido Terrats, D.; Gaug, M.; Giammaria, P.; Godinović, N.; Gora, D.; Guberman, D.; Hadasch, D.; Hahn, A.; Hayashida, M.; Herrera, J.; Hose, J.; Hrupec, D.; Hughes, G.; Idec, W.; Kodani, K.; Konno, Y.; Kubo, H.; Kushida, J.; La Barbera, A.; Lelas, D.; Lindfors, E.; Lombardi, S.; Longo, F.; López, M.; López-Coto, R.; Majumdar, P.; Makariev, M.; Mallot, K.; Maneva, G.; Manganaro, M.; Mannheim, K.; Maraschi, L.; Marcote, B.; Mariotti, M.; Martínez, M.; Mazin, D.; Menzel, U.; Miranda, J. M.; Mirzoyan, R.; Moralejo, A.; Moretti, E.; Nakajima, D.; Neustroev, V.; Niedzwiecki, A.; Nievas Rosillo, M.; Nilsson, K.; Nishijima, K.; Noda, K.; Nogués, L.; Paiano, S.; Palacio, J.; Palatiello, M.; Paneque, D.; Paoletti, R.; Paredes, J. M.; Paredes-Fortuny, X.; Pedaletti, G.; Peresano, M.; Perri, L.; Persic, M.; Poutanen, J.; Prada Moroni, P. G.; Prandini, E.; Puljak, I.; Garcia, J. R.; Reichardt, I.; Rhode, W.; Ribó, M.; Rico, J.; Saito, T.; Satalecka, K.; Schroeder, S.; Schweizer, T.; Sillanpää, A.; Sitarek, J.; Snidaric, I.; Sobczynska, D.; Stamerra, A.; Strzys, M.; Surić, T.; Takalo, L.; Tavecchio, F.; Temnikov, P.; Terzić, T.; Tescaro, D.; Teshima, M.; Torres, D. F.; Toyama, T.; Treves, A.; Vanzo, G.; Vazquez Acosta, M.; Vovk, I.; Ward, J. E.; Will, M.; Wu, M. H.; Zanin, R.

2017-06-01

Context. In this work we present data from observations with the MAGIC telescopes of SN 2014J detected on January 21 2014, the closest Type Ia supernova since Imaging Air Cherenkov Telescopes started to operate. Aims: We aim to probe the possibility of very-high-energy (VHE; E ≥ 100 GeV) gamma rays produced in the early stages of Type Ia supernova explosions. Methods: We performed follow-up observations after this supernova (SN) explosion for five days, between January 27 and February 2 2014. We searched for gamma-ray signals in the energy range between 100 GeV and several TeV from the location of SN 2014J using data from a total of 5.5 h of observations. Prospects for observing gamma rays of hadronic origin from SN 2014J in the near future are also being addressed. Results: No significant excess was detected from the direction of SN 2014J. Upper limits at 95% confidence level on the integral flux, assuming a power-law spectrum, dF/dE ∝ E- Γ, with a spectral index of Γ = 2.6, for energies higher than 300 GeV and 700 GeV, are established at 1.3 × 10-12 and 4.1 × 10-13 photons cm-2 s-1, respectively. Conclusions: For the first time, upper limits on the VHE emission of a Type Ia supernova are established. The energy fraction isotropically emitted into TeV gamma rays during the first 10 days after the supernova explosion for energies greater than 300 GeV is limited to 10-6 of the total available energy budget ( 1051 erg). Within the assumed theoretical scenario, the MAGIC upper limits on the VHE emission suggest that SN 2014J will not be detectable in the future by any current or planned generation of Imaging Atmospheric Cherenkov Telescopes.

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.; Alshareef, Husam N.

2013-01-01

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

The complex becomes more complex: protein-protein interactions of SnRK1 with DUF581 family proteins provide a framework for cell- and stimulus type-specific SnRK1 signaling in plants

Directory of Open Access Journals (Sweden)

Madlen eNietzsche

2014-02-01

Full Text Available In plants, SNF1-related kinase (SnRK1 responds to the availability of carbohydrates as well as to environmental stresses by down-regulating ATP consuming biosynthetic processes, while stimulating energy-generating catabolic reactions through gene expression and post-transcriptional regulation. The functional SnRK1 complex is a heterotrimer where the catalytic alpha subunit associates with a regulatory beta subunit and an activating gamma subunit. Several different metabolites as well as the hormone abscisic acid (ABA have been shown to modulate SnRK1 activity in a cell- and stimulus-type specific manner. It has been proposed that tissue- or stimulus-specific expression of adapter proteins mediating SnRK1 regulation can at least partly explain the differences observed in SnRK1 signaling. By using yeast two-hybrid and in planta bi-molecular fluorescence complementation assays we were able to demonstrate that proteins containing the domain of unknown function (DUF 581 could interact with both isoforms of the SnRK1 alpha subunit (AKIN10/11 of Arabidopsis. A structure/function analysis suggests that the DUF581 is a generic SnRK1 interaction module and co-expression with DUF581 proteins in plant cells leads to reallocation of the kinase to specific regions within the nucleus. Yeast two-hybrid analyses suggest that SnRK1 and DUF581 proteins can share common interaction partners inside the nucleus. The analysis of available microarray data implies that expression of the 19 members of the DUF581 encoding gene family in Arabidopsis is differentially regulated by hormones and environmental cues, indicating specialized functions of individual family members. We hypothesize that DUF581 proteins could act as mediators conferring tissue- and stimulus-type specific differences in SnRK1 regulation.

Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

Science.gov (United States)

Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

2018-03-01

Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

[CH(3)(CH(2))(11)NH(3)]SnI(3): a hybrid semiconductor with MoO(3)-type tin(II) iodide layers.

Science.gov (United States)

Xu, Zhengtao; Mitzi, David B

2003-10-20

The organic-inorganic hybrid [CH(3)(CH(2))(11)NH(3)]SnI(3) presents a lamellar structure with a Sn-I framework isotypic to that of MoO(3). The SnI(3)(-) layer consists of edge and corner-sharing SnI(6) octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3.62 A), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI(4)(2)(-)-based perovskite semiconductors, such as [CH(3)(CH(2))(11)NH(3)](2)SnI(4), with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

A new langbeinite-type phosphate: K2AlSn(PO43

Directory of Open Access Journals (Sweden)

Dan Zhao

2011-10-01

Full Text Available Single crystals of the title compound, dipotassium aluminium tin(IV tris[phosphate(V], K2AlSn(PO43, were synthesized by a high temperature reaction in a platinum crucible. In the structure, the AlIII and SnIV atoms occupy the same site on a threefold rotation axis with occupational disorder in a 1:1 ratio. In the three-dimensional structure, Al/SnO6 octahedra and PO4 tetrahedra are interconnected via their vertices, yielding a [Al/SnP3O12]n framework. The K atoms (site symmetry 3 reside in the large cavities delimited by the [Al/SnP3O12]n framework, and are surrounded by 12 O atoms.

Impact of Nb vacancies and p-type doping of the NbCoSn-NbCoSb half-Heusler thermoelectrics.

Science.gov (United States)

Ferluccio, Daniella A; Smith, Ronald I; Buckman, Jim; Bos, Jan-Willem G

2018-02-07

The half-Heuslers NbCoSn and NbCoSb have promising thermoelectric properties. Here, an investigation of the NbCo 1+y Sn 1-z Sb z (y = 0, 0.05; 0 ≤ z ≤ 1) solid-solution is presented. In addition, the p-type doping of NbCoSn using Ti and Zr substitution is investigated. Rietveld analysis reveals the gradual creation of Nb vacancies to compensate for the n-type doping caused by the substitution of Sb in NbCoSn. This leads to a similar valence electron count (∼18.25) for the NbCo 1+y Sn 1-z Sb z samples (z > 0). Mass fluctuation disorder due to the Nb vacancies strongly decreases the lattice thermal conductivity from 10 W m -1 K -1 (z = 0) to 4.5 W m -1 K -1 (z = 0.5, 1). This is accompanied by a transition to degenerate semiconducting behaviour leading to large power factors, S 2 /ρ = 2.5-3 mW m -1 K -2 and figures of merit, ZT = 0.25-0.33 at 773 K. Ti and Zr can be used to achieve positive Seebeck values, e.g. S = +150 μV K -1 for 20% Zr at 773 K. However, the electrical resistivity, ρ 323K = 27-35 mΩ cm, remains too large for these materials to be considered useful p-type materials.

Modeling Type II-P/II-L Supernovae Interacting with Recent Episodic Mass Ejections from Their Presupernova Stars with MESA and SNEC

Science.gov (United States)

Das, Sanskriti; Ray, Alak

2017-12-01

We show how dense, compact, discrete shells of circumstellar gas immediately outside of red supergiants affect the optical light curves of Type II-P/II-L supernovae (SNe), using the example of SN 2013ej. Earlier efforts in the literature had used an artificial circumstellar medium (CSM) stitched to the surface of an evolved star that had not gone through a phase of late-stage heavy mass loss, which, in essence, is the original source of the CSM. In contrast, we allow enhanced mass-loss rate from the modeled star during the 16O and 28Si burning stages and construct the CSM from the resulting mass-loss history in a self-consistent way. Once such evolved pre-SN stars are exploded, we find that the models with early interaction between the shock and the dense CSM reproduce light curves far better than those without that mass loss and, hence, having no nearby dense CSM. The required explosion energy for the progenitors with a dense CSM is reduced by almost a factor of two compared to those without the CSM. Our model, with a more realistic CSM profile and presupernova and explosion parameters, fits observed data much better throughout the rise, plateau, and radioactive tail phases as compared to previous studies. This points to an intermediate class of supernovae between Type II-P/II-L and Type II-n SNe with the characteristics of simultaneous UV and optical peak, slow decline after peak, and a longer plateau.

Host Galaxy Spectra and Consequences for SN Typing from the SDSS SN Survey

Energy Technology Data Exchange (ETDEWEB)

Olmstead, Matthew D.; Brown, Peter J.; Sako, Masao; Bassett, Bruce; Bizyaev, Dmitry; Brinkmann, J.; Brownstein, Joel R.; Brewington, Howard; Campbell, Heather; D’Andrea, Chris B.; Dawson, Kyle S.; Ebelke, Garrett L.; Frieman, Joshua A.; Galbany, Lluís; Garnavich, Peter; Gupta, Ravi R.; Hlozek, Renee; Jha, Saurabh W.; Kunz, Martin; Lampeitl, Hubert; Malanushenko, Elena; Malanushenko, Viktor; Marriner, John; Miquel, Ramon; Montero-Dorta, Antonio D.; Nichol, Robert C.; Oravetz, Daniel J.; Pan, Kaike; Schneider, Donald P.; Simmons, Audrey E.; Smith, Mathew; Snedden, Stephanie A.

2014-03-06

We present the spectroscopy from 5254 galaxies that hosted supernovae (SNe) or other transient events in the Sloan Digital Sky Survey II (SDSS-II). Obtained during SDSS-I, SDSS-II, and the Baryon Oscillation Spectroscopic Survey (BOSS), this sample represents the largest systematic, unbiased, magnitude limited spectroscopic survey of supernova (SN) host galaxies. Using the host galaxy redshifts, we test the impact of photometric SN classification based on SDSS imaging data with and without using spectroscopic redshifts of the host galaxies. Following our suggested scheme, there are a total of 1166 photometrically classified SNe Ia when using a flat redshift prior and 1126 SNe Ia when the host spectroscopic redshift is assumed. For 1024 (87.8%) candidates classified as likely SNe Ia without redshift information, we find that the classification is unchanged when adding the host galaxy redshift. Using photometry from SDSS imaging data and the host galaxy spectra, we also report host galaxy properties for use in future nalysis of SN astrophysics. Finally, we investigate the differences in the interpretation of the light curve properties with and without knowledge of the redshift. When using the SALT2 light curve fitter, we find a 21% increase in the number of fits that converge when using the spectroscopic redshift. Without host galaxy redshifts, we find that SALT2 light curve fits are systematically biased towards lower photometric redshift estimates and redder colors in the limit of low signal-to-noise data. The general improvements in performance of the light curve fitter and the increased diversity of the host galaxy sample highlights the importance of host galaxy spectroscopy for current photometric SN surveys such as the Dark Energy Survey and future surveys such as the Large Synoptic Survey Telescope.

Spectroscopic Classification of SN 2017ghm as a Type Ia Supernova

Science.gov (United States)

Vinko, J.; Wheeler, J. C.; Wang, X.; Li, W.; Li, Z.; Xiang, D.; Rui, L.; Lin, H.; Xu, Z.; Li, B.; Zhao, H.; Wang, L.; Tan, H.; Zhang, J.

2017-09-01

An optical spectrum (range 360-680 nm) of SN 2017ghm (=PTSS-17uyml), discovered by the PMO-Tsinghua Supernova Survey (PTSS, http://www.cneost.org/ptss/), was obtained with the new "Low Resolution Spectrograph-2" (LRS2) on the 10m Hobby-Eberly Telescope at McDonald Observatory by S. Rostopchin on 2017 Aug 31.17 UT. The spectrum is consistent with that of a heavily reddened Type Ia supernova (with Av > 2.3 mag) around maximum light.

Type Ibn Supernovae Show Photometric Homogeneity and Spectral Diversity at Maximum Light

Energy Technology Data Exchange (ETDEWEB)

Hosseinzadeh, Griffin; Arcavi, Iair; McCully, Curtis; Howell, D. Andrew [Las Cumbres Observatory, 6740 Cortona Dr Ste 102, Goleta, CA 93117-5575 (United States); Valenti, Stefano [Department of Physics, University of California, 1 Shields Ave, Davis, CA 95616-5270 (United States); Johansson, Joel [Department of Particle Physics and Astrophysics, Weizmann Institute of Science, 76100 Rehovot (Israel); Sollerman, Jesper; Fremling, Christoffer; Karamehmetoglu, Emir [Oskar Klein Centre, Department of Astronomy, Stockholm University, Albanova University Centre, SE-106 91 Stockholm (Sweden); Pastorello, Andrea; Benetti, Stefano; Elias-Rosa, Nancy [INAF-Osservatorio Astronomico di Padova, Vicolo dell’Osservatorio 5, I-35122 Padova (Italy); Cao, Yi; Duggan, Gina; Horesh, Assaf [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Mail Code 249-17, Pasadena, CA 91125 (United States); Cenko, S. Bradley [Astrophysics Science Division, NASA Goddard Space Flight Center, Mail Code 661, Greenbelt, MD 20771 (United States); Clubb, Kelsey I.; Filippenko, Alexei V. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Corsi, Alessandra [Department of Physics, Texas Tech University, Box 41051, Lubbock, TX 79409-1051 (United States); Fox, Ori D., E-mail: griffin@lco.global [Space Telescope Science Institute, 3700 San Martin Dr, Baltimore, MD 21218 (United States); and others

2017-02-20

Type Ibn supernovae (SNe) are a small yet intriguing class of explosions whose spectra are characterized by low-velocity helium emission lines with little to no evidence for hydrogen. The prevailing theory has been that these are the core-collapse explosions of very massive stars embedded in helium-rich circumstellar material (CSM). We report optical observations of six new SNe Ibn: PTF11rfh, PTF12ldy, iPTF14aki, iPTF15ul, SN 2015G, and iPTF15akq. This brings the sample size of such objects in the literature to 22. We also report new data, including a near-infrared spectrum, on the Type Ibn SN 2015U. In order to characterize the class as a whole, we analyze the photometric and spectroscopic properties of the full Type Ibn sample. We find that, despite the expectation that CSM interaction would generate a heterogeneous set of light curves, as seen in SNe IIn, most Type Ibn light curves are quite similar in shape, declining at rates around 0.1 mag day{sup −1} during the first month after maximum light, with a few significant exceptions. Early spectra of SNe Ibn come in at least two varieties, one that shows narrow P Cygni lines and another dominated by broader emission lines, both around maximum light, which may be an indication of differences in the state of the progenitor system at the time of explosion. Alternatively, the spectral diversity could arise from viewing-angle effects or merely from a lack of early spectroscopic coverage. Together, the relative light curve homogeneity and narrow spectral features suggest that the CSM consists of a spatially confined shell of helium surrounded by a less dense extended wind.

Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

Energy Technology Data Exchange (ETDEWEB)

Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

2013-12-01

Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

Preparation of n-type semiconductor SnO2 thin films

International Nuclear Information System (INIS)

Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

2013-01-01

We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

Portuguese granites associated with Sn-W and Au mineralizations

Directory of Open Access Journals (Sweden)

Ana M.R. Neiva

2002-01-01

Full Text Available In northern and central Portugal, there are different tin-bearing granites. Most of them are of S-type, others have mixed characteristics of I-type and S-type granites and a few are of I-type. Tin-tungsten deposits are commonly associated with Hercynian tin-bearing S-type granites. Some quartz veins with wolframite are associated with an I-type granite, which has a low Sn content. In suites of tin-bearing S-type granitic rocks, Sn content increases as a function of the degree of fractional crystallization. Greisenizations of two-mica S-type granites associated with tin-tungsten mineralizations are accompanied by an increase in SiO2, H2O+, Sn, W, Nb, Ta, Rb, Zn, and Pb and decrease in MgO, Na2O, V, Sc,Zr, and Sr. The granite associated with the Jales gold deposit is of S-type and strongly differentiated like the tin-bearing S-type granites, but it has a very low Sn content. During fractional crystallization, Si, Rb, Sn, Pb, Au, As, Sb, and S increase. During increasing degree of hydrothermal alteration of this granite at the gold-quartz vein walls, there are progressive increases in K2O, H2O+, Sn, Cs, Cu, Pb, Au, Sb, As, and S.

Spectroscopic Classification of SN 2018nt as a Reddened Type Ia Supernova

Science.gov (United States)

Vinko, J.; Szeged, U.; Wheeler, J. C.

2018-02-01

An optical spectrum (range 360-700 nm) of SN 2018nt (K2 C16-0043), was obtained with the "Low Resolution Spectrograph-2" (LRS2) on the 10m Hobby-Eberly Telescope at McDonald Observatory by S. Odewahn on 2018 Feb 05.20 UT. The spectrum is consistent with that of a heavily reddened Type Ia supernova (with Av > 2 mag) about 3 weeks after maximum light.

STRESS a SN survey at ESO

Science.gov (United States)

Botticella, M. T.

We performed the Southern inTermediate Redshift ESO Supernova Search (STRESS), a survey specifically designed to measure the rate of both SNe Ia and CC SNe, in order to obtain a direct comparison of the high redshift and local rates and to investigate the dependence of the rates on specific galaxy properties, most notably their colour. We found that the type Ia SN rate, at mean redshift z = 0.3, is 0.22+0.10+0.16-0.08-0.14 h270 SNu, while the CC SN rate, at z = 0.21, is 0.82+0.31+0.300.24-0.26 h270 SNu. The quoted errors are the statistical and systematic uncertainties. With respect to the local value, the CC SN rate at z = 0.2 is higher by a factor of ˜ 2, whereas the type Ia SN rate remains almost constant. We also measured the SN rates in the red and blue galaxies and found that the SN Ia rate seems to be constant in galaxies of different colour, whereas the CC SN rate seems to peak in blue galaxies, as in the local Universe. Finally we exploited the link between SFH and SN rates to predict the evolutionary behaviour of the SN rates and compare it with the path indicated by observations.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Science.gov (United States)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Vacancy site occupation by Co and Ir in half-Heusler ZrNiSn and conversion of the thermoelectric properties from n-type to p-type

International Nuclear Information System (INIS)

Kimura, Yoshisato; Tanoguchi, Toshiyasu; Kita, Takuji

2010-01-01

The n-type thermoelectric properties of the half-Heusler compound ZrNiSn can be converted to p-type by the addition of Co and Ir. We found that Co and Ir atoms preferably occupy the vacancy sites instead of substituting at Ni sites. This implies that the phase stability of the compound gradually changes towards that of the Heusler compound Zr(Ni,M) 2 Sn, where M is Co and/or Ir. The occupation of vacancy sites by Co and Ir atoms leads to a drastic reduction in lattice thermal conductivity owing to the enhancement of phonon scattering by the solid solution effect.

Peculiarities of component interaction in {Gd, Er}-V-Sn Ternary systems at 870 K and crystal structure of RV6Sn6 stannides

International Nuclear Information System (INIS)

Romaka, L.; Stadnyk, Yu.; Romaka, V.V.; Demchenko, P.; Stadnyshyn, M.; Konyk, M.

2011-01-01

Highlights: → {Gd, Er}-V-Sn ternary systems at 870 K are characterized by formation of stannides with general compositions RV 6 Sn 6 . → Isostructural RV 6 Sn 6 compounds were also found with Y, Dy, Ho, Tm, and Lu. → The crystal structure of RV 6 Sn 6 compounds was determined by powder diffraction method. → Structural analysis showed that RV 6 Sn 6 compounds (R = Gd, Dy-Tm, Lu) are disordered; YV 6 Sn 6 is characterized by structure ordering. - Abstract: The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV 6 Sn 6 (SmMn 6 Sn 6 -type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn 6 Sn 6 -type were also found with Dy, Ho, Tm, and Lu, while YV 6 Sn 6 compound crystallizes in HfFe 6 Ge 6 structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.

SN 2016jhj at redshift 0.34: extending the Type II supernova Hubble diagram using the standard candle method

Science.gov (United States)

de Jaeger, T.; Galbany, L.; Filippenko, A. V.; González-Gaitán, S.; Yasuda, N.; Maeda, K.; Tanaka, M.; Morokuma, T.; Moriya, T. J.; Tominaga, N.; Nomoto, K.; Komiyama, Y.; Anderson, J. P.; Brink, T. G.; Carlberg, R. G.; Folatelli, G.; Hamuy, M.; Pignata, G.; Zheng, W.

2017-12-01

Although Type Ia supernova cosmology has now reached a mature state, it is important to develop as many independent methods as possible to understand the true nature of dark energy. Recent studies have shown that Type II supernovae (SNe II) offer such a path and could be used as alternative distance indicators. However, the majority of these studies were unable to extend the Hubble diagram above redshift z = 0.3 because of observational limitations. Here, we show that we are now ready to move beyond low redshifts and attempt high-redshift (z ≳ 0.3) SN II cosmology as a result of new-generation deep surveys such as the Subaru/Hyper Suprime-Cam survey. Applying the 'standard candle method' to SN 2016jhj (z = 0.3398 ± 0.0002; discovered by HSC) together with a low-redshift sample, we are able to construct the highest-redshift SN II Hubble diagram to date with an observed dispersion of 0.27 mag (i.e. 12-13 per cent in distance). This work demonstrates the bright future of SN II cosmology in the coming era of large, wide-field surveys like that of the Large Synoptic Survey Telescope.

SNaX: A Database of Supernova X-Ray Light Curves

Energy Technology Data Exchange (ETDEWEB)

Ross, Mathias; Dwarkadas, Vikram V., E-mail: Mathias_Ross@msn.com, E-mail: vikram@oddjob.uchicago.edu [Astronomy and Astrophysics, University of Chicago, 5640 S Ellis Avenue, ERC 569, Chicago, IL 60637 (United States)

2017-06-01

We present the Supernova X-ray Database (SNaX), a compilation of the X-ray data from young supernovae (SNe). The database includes the X-ray fluxes and luminosities of young SNe, from days to years after outburst. The original goal and intent of this study was to present a database of Type IIn SNe (SNe IIn), which we have accomplished. Our ongoing goal is to expand the database to include all SNe for which published data are available. The database interface allows one to search for SNe using various criteria, plot all or selected data points, and download both the data and the plot. The plotting facility allows for significant customization. There is also a facility for the user to submit data that can be directly incorporated into the database. We include an option to fit the decay of any given SN light curve with a power-law. The database includes a conversion of most data points to a common 0.3–8 keV band so that SN light curves may be directly compared with each other. A mailing list has been set up to disseminate information about the database. We outline the structure and function of the database, describe its various features, and outline the plans for future expansion.

SNaX: A Database of Supernova X-Ray Light Curves

International Nuclear Information System (INIS)

Ross, Mathias; Dwarkadas, Vikram V.

2017-01-01

We present the Supernova X-ray Database (SNaX), a compilation of the X-ray data from young supernovae (SNe). The database includes the X-ray fluxes and luminosities of young SNe, from days to years after outburst. The original goal and intent of this study was to present a database of Type IIn SNe (SNe IIn), which we have accomplished. Our ongoing goal is to expand the database to include all SNe for which published data are available. The database interface allows one to search for SNe using various criteria, plot all or selected data points, and download both the data and the plot. The plotting facility allows for significant customization. There is also a facility for the user to submit data that can be directly incorporated into the database. We include an option to fit the decay of any given SN light curve with a power-law. The database includes a conversion of most data points to a common 0.3–8 keV band so that SN light curves may be directly compared with each other. A mailing list has been set up to disseminate information about the database. We outline the structure and function of the database, describe its various features, and outline the plans for future expansion.

SPECTROSCOPIC OBSERVATIONS OF SN 2012fr: A LUMINOUS, NORMAL TYPE Ia SUPERNOVA WITH EARLY HIGH-VELOCITY FEATURES AND A LATE VELOCITY PLATEAU

International Nuclear Information System (INIS)

Childress, M. J.; Scalzo, R. A.; Sim, S. A.; Tucker, B. E.; Yuan, F.; Schmidt, B. P.; Cenko, S. B.; Filippenko, A. V.; Silverman, J. M.; Contreras, C.; Hsiao, E. Y.; Phillips, M.; Morrell, N.; Jha, S. W.; McCully, C.; Anderson, J. P.; De Jaeger, T.; Forster, F.; Benetti, S.; Bufano, F.

2013-01-01

We present 65 optical spectra of the Type Ia SN 2012fr, 33 of which were obtained before maximum light. At early times, SN 2012fr shows clear evidence of a high-velocity feature (HVF) in the Si II λ6355 line that can be cleanly decoupled from the lower velocity ''photospheric'' component. This Si II λ6355 HVF fades by phase –5; subsequently, the photospheric component exhibits a very narrow velocity width and remains at a nearly constant velocity of ∼12,000 km s –1 until at least five weeks after maximum brightness. The Ca II infrared triplet exhibits similar evidence for both a photospheric component at v ≈ 12,000 km s –1 with narrow line width and long velocity plateau, as well as an HVF beginning at v ≈ 31,000 km s –1 two weeks before maximum. SN 2012fr resides on the border between the ''shallow silicon'' and ''core-normal'' subclasses in the Branch et al. classification scheme, and on the border between normal and high-velocity Type Ia supernovae (SNe Ia) in the Wang et al. system. Though it is a clear member of the ''low velocity gradient'' group of SNe Ia and exhibits a very slow light-curve decline, it shows key dissimilarities with the overluminous SN 1991T or SN 1999aa subclasses of SNe Ia. SN 2012fr represents a well-observed SN Ia at the luminous end of the normal SN Ia distribution and a key transitional event between nominal spectroscopic subclasses of SNe Ia.

Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits

International Nuclear Information System (INIS)

Boettinger, W.J.; Johnson, C.E.; Bendersky, L.A.; Moon, K.-W.; Williams, M.E.; Stafford, G.R.

2005-01-01

High purity bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 μm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Beam deflection measurements within 15 min of plating proved that all electrodeposits had in-plane compressive stress. In several days, the surfaces of the Sn-Cu deposits, which have the highest compressive stress, develop 50 μm contorted hillocks and 200 μm whiskers, pure Sn deposits develop 20 μm compact conical hillocks, and Sn-Pb deposits, which have the lowest compressive stress, remain unchanged. The differences between the initial compressive stresses for each alloy and pure Sn is due to the rapid precipitation of Cu 6 Sn 5 or Pb particles, respectively, within supersaturated Sn grains produced by electrodeposition. Over longer time, analysis of beam deflection measurements indicates that the compressive stress is augmented by the formation of Cu 6 Sn 5 on the bronze/Sn interface, while creep of the electrodeposit tends to decrease the compressive stress. Uniform creep occurs for Sn-Pb because it has an equi-axed grain structure. Localized creep in the form of hillocks and whiskers occurs for Sn and Sn-Cu because both have columnar structures. Compact hillocks form for the Sn deposits because the columnar grain boundaries are mobile. Contorted hillocks and whiskers form for the Sn-Cu deposits because the columnar grain boundary motion is impeded

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

Science.gov (United States)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

OpenAIRE

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I; Powell, Anthony V

2017-01-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0 ≤ x ≤ 3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0 ≤ x ≤ 0.6) leads to a transition from metallic to n-type semiconducting behaviour at x = 0.5. Iron substitu...

DISCOVERY OF THE BROAD-LINED TYPE Ic SN 2013cq ASSOCIATED WITH THE VERY ENERGETIC GRB 130427A

Energy Technology Data Exchange (ETDEWEB)

Xu, D.; Krühler, T.; Hjorth, J.; Malesani, D.; Fynbo, J. P. U.; Watson, D. J.; Geier, S. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 København Ø (Denmark); De Ugarte Postigo, A.; Thöne, C. C.; Sánchez-Ramírez, R. [Instituto de Astrofísica de Andalucía, CSIC, Glorieta de la Astronomía s/n, E-18008 Granada (Spain); Leloudas, G. [The Oskar Klein Centre, Department of Physics, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cano, Z.; Jakobsson, P. [Centre for Astrophysics and Cosmology, Science Institute, University of Iceland, Dunhagi 5, IS-107 Reykjavik (Iceland); Schulze, S. [Departamento de Astronomía y Astrofísica, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 22 (Chile); Kaper, L. [Astronomical Institute Anton Pannekoek, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam (Netherlands); Sollerman, J. [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cabrera-Lavers, A. [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Cao, C. [Department of Space Science and Physics, Shandong University at Weihai, Weihai, Shandong 264209 (China); Covino, S. [INAF/Brera Astronomical Observatory, via Bianchi 46, I-23807 Merate (Italy); Flores, H., E-mail: dong@dark-cosmology.dk [Laboratoire Galaxies Etoiles Physique et Instrumentation, Observatoire de Paris, 5 place Jules Janssen, F-92195 Meudon (France); and others

2013-10-20

Long-duration gamma-ray bursts (GRBs) at z < 1 are found in most cases to be accompanied by bright, broad-lined Type Ic supernovae (SNe Ic-BL). The highest-energy GRBs are mostly located at higher redshifts, where the associated SNe are hard to detect observationally. Here, we present early and late observations of the optical counterpart of the very energetic GRB 130427A. Despite its moderate redshift, z = 0.3399 ± 0.0002, GRB 130427A is at the high end of the GRB energy distribution, with an isotropic-equivalent energy release of E{sub iso} ∼ 9.6 × 10{sup 53} erg, more than an order of magnitude more energetic than other GRBs with spectroscopically confirmed SNe. In our dense photometric monitoring, we detect excess flux in the host-subtracted r-band light curve, consistent with that expected from an emerging SN, ∼0.2 mag fainter than the prototypical SN 1998bw. A spectrum obtained around the time of the SN peak (16.7 days after the GRB) reveals broad undulations typical of SNe Ic-BL, confirming the presence of an SN, designated SN 2013cq. The spectral shape and early peak time are similar to those of the high expansion velocity SN 2010bh associated with GRB 100316D. Our findings demonstrate that high-energy, long-duration GRBs, commonly detected at high redshift, can also be associated with SNe Ic-BL, pointing to a common progenitor mechanism.

The Type IIP SN 2005ay: An Extensive Study From UltraViolet To Near-IR

Science.gov (United States)

Bufano, F. M.; Turatto, M.; Zampieri, L.; Gal-Yam, A.

2006-08-01

Several supernova types are thought to explode via the gravitational collapse of the core of massive stars at the end of their lifetimes. The great observational diversity has not been fully understood even if it clearly involves the progenitor masses and configurations at the time of explosion. These Supernovae, called Core Collapse Supernovae (CC SNe), are expected to dominate the counts of SNe observed at high redshifts and to be the only observable probe of the first generation stars (Pop III). Recently indicated as reliable distance indicators (Hamuy 02, Pastorello `03), CC SNe are objects of great interest but significantly less studied in comparison with the Termonuclear ones. With the aim to understand better the reasons of the heterogeneous behaviour , we have started an extensive study of the properties of SN II with different observational features (luminosity, velocity, etc..). Here we present the last results on our first observed target, SN2005ay, a Type IIP supernova observed in an extended way from the Ultraviolet wavelengths, provided by the GALEX , to the Optical and near-IR , obtained with IISP (Italian Intensive Supernova Program).

Study on introduction of SN transition type FCL into looped distribution system

International Nuclear Information System (INIS)

Kameda, Hideyuki; Uemura, Satoshi; Ichinose, Ataru

2012-01-01

A large amount of distributed generations such as PV will be introduced into the future Japanese distribution systems. Although distribution systems are presently operated under radial configuration and are terminated with loads, the connection of the distributed generations may cause some problems such as the occurrence of reverse power, the sensitivity decrease of the protection relays, and the voltage rise at the ends. It is assumed that a distribution system is looped in a large city to aim at the improvement of the service reliability under the situation mentioned above. However, a countermeasure against the increase of short-circuit current may be necessary in a looped system. We think that the installation of the SN transition type superconducting fault current limiter (FCL) is effective as a measure against the increase of short-circuit capacity, so we have proposed an effective arrangement of the FCLs into a radial distribution system and the method of setting the parameters. In this paper, a new introduction of FCLs is proposed, that is the way to clear a short-circuit fault within a looped system by the protection relay and the loop switch (LS). To achieve this purpose, the FCL needs to reduce the current through the LS below the rated current of the LS. And we propose the best arrangement to achieve the purpose, and the method of setting the parameters of a SN transition type FCL. Our proposal may bring the flexibility of composing any system configuration.

A Review of SnSe: Growth and Thermoelectric Properties

Science.gov (United States)

Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

2018-04-01

SnSe is a 2D semiconductor with an indirect energy gap of 0.86 - 1 eV; it is widely used in solar cell, optoelectronics, and electronic device applications. Recently, SnSe has been considered as a robust candidate for energy conversion applications due to its high thermoelectric performance ( ZT = 2.6 in p-type and 2.2 in n-type), which is assigned mainly to its anhamornic bonding leading to an ultralow thermal conductivity. In this review, we first discuss the crystalline and electronic structures of SnSe and the source of its p-type characteristic. Then, some typical single crystal and polycrystal growth techniques, as well as an epitaxial thin film growth technique, are outlined. The reported thermoelectric properties of SnSe grown by using each technique are also reviewed. Finally, we will describe some remaining issues concerning the use of SnSe for thermoelectric applications.

The effect of electron and hole doping on the thermoelectric properties of shandite-type Co3Sn2S2

Science.gov (United States)

Mangelis, Panagiotis; Vaqueiro, Paz; Jumas, Jean-Claude; da Silva, Ivan; Smith, Ronald I.; Powell, Anthony V.

2017-07-01

Electron and hole doping in Co3Sn2S2, through chemical substitution of cobalt by the neighbouring elements, nickel and iron, affects both the structure and thermoelectric properties. Electron doping to form Co3-xNixSn2S2 (0≤x≤3) results in an expansion of the kagome layer and materials become increasingly metallic as cobalt is substituted. Conversely, hole doping in Co3-xFexSn2S2 (0≤x≤0.6) leads to a transition from metallic to n-type semiconducting behaviour at x=0.5. Iron substitution induces a small increase in the separation between the kagome layers and improves the thermoelectric performance. Neutron diffraction data reveal that substitution occurs at the Co 9(d) site in a disordered fashion. Mössbauer spectroscopy reveals two iron environments with very different isomer shifts, which may be indicative of a mixed-valence state, while Sn exhibits an oxidation state close to zero in both series. Co2.6Fe0.4Sn2S2 exhibits a maximum figure-of-merit, ZT=0.2 at 523 K while Co2.4Fe0.6Sn2S2 reaches a power factor of 10.3 μW cm-1 K-2 close to room temperature.

Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

International Nuclear Information System (INIS)

Horváth, Barbara; Illés, Balázs; Shinohara, Tadashi

2014-01-01

Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8–10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5–2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam–scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu 6 Sn 5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu 6 Sn 5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. - Highlights: • Intermetallic growth was characterised in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. • Intermetallic growth rates and roughness are similar in the Sn/Cu and Sn/Ni/Cu systems. • Sn/Ni/Cu system contains the following intermetallic layer structure Sn–Ni3Sn4–Ni3Sn2–Ni3Sn–Ni. • In the case of Sn/Ag/Cu systems the Sn and Cu diffusion consumes the Ag barrier layer. • When Cu reaches the Sn/Ag interface a large amount of Cu 6 Sn 5 forms above the Ag layer

Li2SnO3 derived secondary Li-Sn alloy electrode for lithium-ion batteries

International Nuclear Information System (INIS)

Zhang, D.W.; Zhang, S.Q.; Jin, Y.; Yi, T.H.; Xie, S.; Chen, C.H.

2006-01-01

As a possible high-capacity Li-ion battery anode material, Li 2 SnO 3 was prepared via a solid-state reaction route and a sol-gel route, separately. Its electrochemical performance was tested in coin-type cells with metallic Li as the counter electrode. The results show that the sol-gel derived Li 2 SnO 3 has uniform nano-sized particles (200-300 nm) and can deliver a better reversible capacity (380 mAh/g after 50 cycles in the voltage window of 0-1 V) than that from the solid-state reaction route. The characterizations by means of galvanostatic cycling, cyclic voltammetry and ex situ X-ray diffraction indicate that the electrochemical process of the Li 2 SnO 3 lithiation proceeds with an initial structural reduction of the composite oxide into Sn-metal and Li 2 O followed by a reversible Li-Sn alloy formation in the Li 2 O matrix. Due to the buffer role of the Li 2 O matrix, the reversibility of the secondary Li-Sn alloy electrode is largely secured

Muon spin rotation measurements on LaNiSn

International Nuclear Information System (INIS)

Drew, A.J.; Lee, S.L.; Ogrin, F.Y.; Charalambous, D.; Bancroft, N.; Paul, D. McK.; Takabatake, T.; Baines, C.

2006-01-01

The first microscopic investigation of superconductivity in LaNiSn is reported using muon spin rotation. LaNiSn is found to be mainly a type I superconductor in an intermediate state with some evidence for type II behaviour at low temperatures, possibly due to a temperature dependent Ginzburg Landau parameter κ

OPTICAL OBSERVATIONS OF THE TYPE IA SUPERNOVA SN 2011fe IN M101 FOR NEARLY 500 DAYS

Energy Technology Data Exchange (ETDEWEB)

Zhang, Kaicheng; Wang, Xiaofeng; Zhao, Xulin; Chen, Jia; Chen, Juncheng; Huang, Fang; Mo, Jun; Rui, Liming; Song, Hao; Sai, Hanna; Li, Wenxiong [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing, 100084 (China); Zhang, JuJia; Bai, Jinming [Yunnan Astronomical Observatory of China, Chinese Academy of Sciences, Kunming, 650011 (China); Zhang, Tianmeng; Wu, Chao [National Astronomical Observatory of China, Chinese Academy of Sciences, Beijing, 100012 (China); Ganeshalingam, Mohan; Li, Weidong; Filippenko, Alexei V.; Zheng, Weikang [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Wang, Lifan, E-mail: wang_xf@mail.tsinghua.edu.cn [Physics and Astronomy Department, Texas A and M University, College Station, TX 77843 (United States)

2016-03-20

We present well-sampled optical observations of the bright Type Ia supernova (SN Ia) SN 2011fe in M101. Our data, starting from ∼16 days before maximum light and extending to ∼463 days after maximum, provide an unprecedented time series of spectra and photometry for a normal SN Ia. Fitting the early-time rising light curve, we find that the luminosity evolution of SN 2011fe follows a t{sup n} law, with the index n being close to 2.0 in the VRI bands but slightly larger in the U and B bands. Combining the published ultraviolet (UV) and near-infrared (NIR) photometry, we derive the contribution of UV/NIR emission relative to the optical. SN 2011fe is found to have stronger UV emission and reaches its UV peak a few days earlier than other SNe Ia with similar Δm{sub 15}(B), suggestive of less trapping of high-energy photons in the ejecta. Moreover, the U-band light curve shows a notably faster decline at late phases (t ≈ 100–300 days), which also suggests that the ejecta may be relatively transparent to UV photons. These results favor the notion that SN 2011fe might have a progenitor system with relatively lower metallicity. On the other hand, the early-phase spectra exhibit prominent high-velocity features (HVFs) of O i λ7773 and the Ca ii NIR triplet, but only barely detectable in Si ii 6355. This difference can be caused by either an ionization/temperature effect or an abundance enhancement scenario for the formation of HVFs; it suggests that the photospheric temperature of SN 2011fe is intrinsically low, perhaps owing to incomplete burning during the explosion of the white dwarf.

Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

International Nuclear Information System (INIS)

Yohannan, Jinu P.; Vidyasagar, Kanamaluru

2016-01-01

Ten AInM′S 4 (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS 4 (1-β), RbInGeS 4 (2), CsInGeS 4 (3-β), TlInGeS 4 (4-β), RbInSnS 4 (8-β) and CsInSnS 4 (9) compounds with three-dimensional BaGa 2 S 4 structure and CsInGeS 4 (3-α) and TlInGeS 4 (4-α) compounds with a layered TlInSiS 4 structure have tetrahedral [InM′S 4 ] − frameworks. On the other hand, LiInSnS 4 (5) with spinel structure and NaInSnS 4 (6), KInSnS 4 (7), RbInSnS 4 (8-α) and TlInSnS 4 (10) compounds with layered structure have octahedral [InM′S 4 ] − frameworks. NaInSnS 4 (6) and KInSnS 4 (7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS 4 and KInSnS 4 compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S 4 compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS 4 and KInSnS 4 compounds undergo facile topotactic ion-exchange at room temperature.

Changes of electronic structure of SnTe due to high concentration of Sn vacancies

International Nuclear Information System (INIS)

Masek, J.; Nuzhnyj, D.N.

1997-01-01

Non-stoichiometric Sn 1-y Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn 1-x Gd x Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling.The influence of the Sn vacancies on the band structure cannot be neglect if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε d can come out above the heavy-hole band. (author)

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon

2017-08-05

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon; Kang, Sun Kil; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Kumaresan, Yogeenth; Lee, Sungeun; Lee, Chaedeok; Ham, Moon-Ho; Jung, Gun Young

2017-01-01

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

International Nuclear Information System (INIS)

Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

2006-01-01

Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

Superconductivity, carrier concentration, and the ionic model of Sn/sub 4/P/sub 3/ and Sn/sub 4/As/sub 3/

Energy Technology Data Exchange (ETDEWEB)

Van Maaren, M H

1969-06-01

Superconductivity is reported for Sn/sub 4/P/sub 2.65/ at T/sub c/ 1.2/sup 0/K. Hall constant and reflectivity measurements indicate a mixed type of conduction for Sn/sub 4/P/sub 2.65/ and Sn/sub 3.80/ As/sub 3/. The ionic model of Geller and Hull is not applicable.

Direct transformation of xylan-type hemicelluloses to furfural via SnCl₄ catalysts in aqueous and biphasic systems.

Science.gov (United States)

Wang, Wenju; Ren, Junli; Li, Huiling; Deng, Aojie; Sun, Runcang

2015-05-01

Direct catalytic transformation of xylan-type hemicelluloses to furfural in the aqueous system and the biphasic system were comparatively investigated under mild conditions. Screening of several promising chlorides for conversion of beech xylan in the aqueous system revealed the Lewis acid SnCl4 was the most effective catalyst. Comparing to the single aqueous system, the bio-based 2-methyltetrahydrofuran (2-MTHF)/H2O biphasic system was more conducive to the synthesis of furfural, in which the highest furfural yield of 78.1% was achieved by using SnCl4 as catalysts under the optimized reaction conditions (150°C, 120 min). Additionally, the influences of xylan-type hemicelluloses with different chemical and structural features from beech, corncob and bagasse on the furfural production were studied. It was found that furfural yield to some extent was determined by the xylose content in hemicelluloses and also had relationships with the molecular weight of hemicelluloses and the degree of crystallization. Copyright © 2015 Elsevier Ltd. All rights reserved.

A facile inexpensive route for SnS thin film solar cells with SnS{sub 2} buffer

Energy Technology Data Exchange (ETDEWEB)

Gedi, Sreedevi [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Minna Reddy, Vasudeva Reddy, E-mail: drmvasudr9@gmail.com [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Pejjai, Babu [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Park, Chinho, E-mail: chpark@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Ramakrishna Reddy, K.T., E-mail: ktrkreddy@gmail.com [Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India)

2016-05-30

Graphical abstract: PYS spectra of SnS/SnS{sub 2} interface and the related band diagram. - Highlights: • A low cost SnS solar cell is developed using chemical bath deposition. • We found E{sub I} & χ of SnS (5.3 eV & 4.0 eV) and SnS{sub 2} (6.9 eV & 4.1 eV) films from PYS. • Band offsets of 0.1 eV (E{sub c}) and 1.6 eV (E{sub v}) are estimated for SnS/SnS{sub 2} junction. • SnS based solar cell showed a conversion efficiency of 0.51%. - Abstract: Environment-friendly SnS based thin film solar cells with SnS{sub 2} as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS{sub 2} films were polycrystalline; (1 1 1)/(0 0 1) peaks as the preferred orientation; 1.3 eV/2.8 eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS{sub 2} films for the first time. These values obtained as 5.3 eV and 4.0 eV for SnS films; 6.9 eV and 4.1 eV for SnS{sub 2} films. The band alignment of SnS/SnS{sub 2} junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1 eV and 1.6 eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (V{sub oc}) of 0.12 V, short circuit current density (J{sub sc}) of 10.87 mA cm{sup −2}, fill factor (FF) of 39% and conversion efficiency of 0.51%.

New prospects for detecting high-energy neutrinos from nearby supernovae

Science.gov (United States)

Murase, Kohta

2018-04-01

Neutrinos from supernovae (SNe) are crucial probes of explosive phenomena at the deaths of massive stars and neutrino physics. High-energy neutrinos are produced through hadronic processes by cosmic rays, which are accelerated during interaction between the supernova (SN) ejecta and circumstellar material (CSM). Recent observations of extragalactic SNe have revealed that a dense CSM is commonly expelled by the progenitor star. We provide new quantitative predictions of time-dependent high-energy neutrino emission from diverse types of SNe. We show that IceCube and KM3Net can detect ˜103 events from a SN II-P (and ˜3 ×105 events from a SN IIn) at a distance of 10 kpc. The new model also enables us to critically optimize the time window for dedicated searches for nearby SNe. A successful detection will give us a multienergy neutrino view of SN physics and new opportunities to study neutrino properties, as well as clues to the cosmic-ray origin. GeV-TeV neutrinos may also be seen by KM3Net, Hyper-Kamiokande, and PINGU.

Nonlocal Cooper pair splitting in a pSn-junction

NARCIS (Netherlands)

Veldhorst, M.; Brinkman, Alexander

2010-01-01

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor-superconductor-n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the band structure of the electrodes. The pSn junction is

Peculiarities of component interaction in {l_brace}Gd, Er{r_brace}-V-Sn Ternary systems at 870 K and crystal structure of RV{sub 6}Sn{sub 6} stannides

Energy Technology Data Exchange (ETDEWEB)

Romaka, L., E-mail: romakal@franko.lviv.ua [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine); Romaka, V.V. [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Demchenko, P.; Stadnyshyn, M.; Konyk, M. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine)

2011-09-08

Highlights: > {l_brace}Gd, Er{r_brace}-V-Sn ternary systems at 870 K are characterized by formation of stannides with general compositions RV{sub 6}Sn{sub 6}. > Isostructural RV{sub 6}Sn{sub 6} compounds were also found with Y, Dy, Ho, Tm, and Lu. > The crystal structure of RV{sub 6}Sn{sub 6} compounds was determined by powder diffraction method. > Structural analysis showed that RV{sub 6}Sn{sub 6} compounds (R = Gd, Dy-Tm, Lu) are disordered; YV{sub 6}Sn{sub 6} is characterized by structure ordering. - Abstract: The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV{sub 6}Sn{sub 6} (SmMn{sub 6}Sn{sub 6}-type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn{sub 6}Sn{sub 6}-type were also found with Dy, Ho, Tm, and Lu, while YV{sub 6}Sn{sub 6} compound crystallizes in HfFe{sub 6}Ge{sub 6} structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.

SN 2016X: a type II-P supernova with a signature of shock breakout from explosion of a massive red supergiant

Science.gov (United States)

Huang, F.; Wang, X.-F.; Hosseinzadeh, G.; Brown, P. J.; Mo, J.; Zhang, J.-J.; Zhang, K.-C.; Zhang, T.-M.; Howell, D.-A.; Arcavi, I.; McCully, C.; Valenti, S.; Rui, L.-M.; Song, H.; Xiang, D.-F.; Li, W.-X.; Lin, H.; Wang, L.-F.

2018-04-01

We present extensive ultraviolet (UV) and optical photometry, as well as dense optical spectroscopy, for type II Plateau (IIP) supernova SN 2016X that exploded in the nearby (˜15 Mpc) spiral galaxy UGC 08041. The observations span the period from 2 to 180 d after the explosion; in particular, the Swift UV data probably captured the signature of shock breakout associated with the explosion of SN 2016X. It shows very strong UV emission during the first week after explosion, with a contribution of ˜20-30 per cent to the bolometric luminosity (versus ≲15 per cent for normal SNe IIP). Moreover, we found that this supernova has an unusually long rise time of about 12.6 ± 0.5 d in the R band (versus ˜7.0 d for typical SNe IIP). The optical light curves and spectral evolution are quite similar to the fast-declining type IIP object SN 2013ej, except that SN 2016X has a relatively brighter tail. Based on the evolution of photospheric temperature as inferred from the Swift data in the early phase, we derive that the progenitor of SN 2016X has a radius of about 930 ± 70 R⊙. This large-size star is expected to be a red supergiant star with an initial mass of ≳19-20 M⊙ based on the mass-radius relation of the Galactic red supergiants, and it represents one of the most largest and massive progenitors found for SNe IIP.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Ab initio study of native defects in SnO under strain

KAUST Repository

Bianchi Granato, Danilo

2014-04-01

Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent electronics. To this end, it is necessary to understand the behaviour of defects in order to control them. We use density functional theory to study native defects of SnO under tensile and compressive strain. We show that Sn vacancies are less stable under tension and more stable under compression, irrespectively of the charge state. In contrast, O vacancies behave differently for different charge states. It turns out that the most stable defect under compression is the +1 charged O vacancy in an Sn-rich environment and the charge neutral O interstitial in an O-rich environment. Therefore, compression can be used to transform SnO from a p-type into either an n-type or an undoped semiconductor. Copyright © EPLA, 2014.

Measurements of distribution coefficient for Sn, Pb and Th on sand stone and tuff in saline type groundwater

International Nuclear Information System (INIS)

Nakazawa, Toshiyuki; Okada, Kenichi; Muroi, Masayuki; Shibata, Masahiro; Sasamoto, Hiroshi

2004-02-01

Japan Nuclear Cycle Development Institute (JNC) has developed the sorption database for bentonite and rocks in order to assess the retardation capacities of important radioactive elements in natural and engineered barriers in the H12 report. However, there are not enough distribution coefficient data for radioactive elements in saline type groundwater in the database. Sn (tin), Pb (lead) and Th(thorium) are important radioactive elements for performance assessment of high level radioactive waste disposal, thus we carried out the batch sorption experiments for these radioactive elements on sand stone and tuff. The experiments for each radioactive element were performed on the following conditions; Sn: Kd measurements using the solutions (distilled water or artificial sea water) reacted with sand stone. Pb: Kd measurements using solution (artificial sea water) reacted with sand stone or tuff. Th: Kd measurements using solution (artificial sea water) reacted with sand stone as a function of carbonate concentration. The results of experiment are summarized below; In the case of Sn, Kd were 0.4-1 m 3 /kg in distilled water type and approximately 1 m 3 /kg in artificial sea water type. And also, Kd was 0.3 m 3 /kg in artificial sea water adjusted Ph 12. In artificial sea water type, it was suggested that Kd decreased with pH. In the case of Pb, Kd were approximately 2 m 3 /kg on sand stone and 4-10 m 3 /kg on tuff in artificial sea water type. Kd on tuff was a little larger than that on sand stone. There were no distinctly differences depending on solid-liquid separation methods. In the case of Th, Kd was approximately 1-8 m 3 /kg in artificial sea water type. On the other hand, sorption of Th on sand stone was not observed (i.e., Kd = 0 m 3 /kg) in high carbonate solution. It was estimated that low Kd in high carbonate solution might be caused by speciation of because Th could form the anions in the solution such as hydroxo-carbonate complexes and carbonate complexes

THERMOELECTRIC PROPERTIES OF HOT-PRESSED p-TYPE Mg2Si0.3Sn0.7 SOLID SOLUTION

Directory of Open Access Journals (Sweden)

G. N. Isachenko

2014-05-01

Full Text Available It is shown that thermoelectric energy conversion which gives the possibility for utilizing a low potential heat is one of the ways for adoption of energy-saving technologies; and semiconductor materials with p-type and n-type conductivities having high thermoelectric figure of merit are necessary for operation of thermoelectric generators. The paper deals with possibility of usage of the p-Mg2Si0.3Sn0.7 solid solution (with a nanostructured modification as a couple for the well studied thermoelectric material based on n-Mg2Si-Mg2Sn. A technological scheme for fabrication of heavily doped Mg2Si0.3Sn0.7 solid solution of p-type by hot pressing from nanopowder is developed. The given technology has made it possible to reduce duration of a homogeneous material fabrication and has improved its physical and chemical properties. The samples were made by three ways: direct fusion for polycrystals fabrication; hot pressing from microparticles; nanostructuring, i.e. hot pressing from nanoparticles. By X-ray diffraction it is shown that sizes of structural elements in the fabricated samples are about 40 nm. The probe technique is used for measurement of electric conductivity and Seebeck coefficient. The stationary absolute method is used for measurement of thermal conductivity. Thermoelectric figure of merit is defined by measured values of kinetic coefficients in the temperatures range of 77 – 800 K. It was demonstrated, that electric conductivity, Seebeck coefficient and the power factor do not depend practically on a way of solid solution preparation. Thermal conductivity of samples pressed from nanoparticles has appeared to be higher, than of samples, obtained by direct fusion; i.e. in this case nanostructuring has not led to increase of thermoelectric figure of merit. The conclusion is drawn, that polycrystalline semiconductor Mg2Si0.3Sn0.7 can be used as a p-branch for a thermoelectric generator though nanostructuring has not led to the figure of

Portuguese granites associated with Sn-W and Au mineralizations

OpenAIRE

Ana M.R. Neiva

2002-01-01

In northern and central Portugal, there are different tin-bearing granites. Most of them are of S-type, others have mixed characteristics of I-type and S-type granites and a few are of I-type. Tin-tungsten deposits are commonly associated with Hercynian tin-bearing S-type granites. Some quartz veins with wolframite are associated with an I-type granite, which has a low Sn content. In suites of tin-bearing S-type granitic rocks, Sn content increases as a function of the degree of fractional cr...

Effect of Sn Composition in Ge1- x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Science.gov (United States)

Kil, Yeon-Ho; Kang, Sukill; Jeong, Tae Soo; Shim, Kyu-Hwan; Kim, Dae-Jung; Choi, Yong-Dae; Kim, Mi Joung; Kim, Taek Sung

2018-05-01

The Ge1- x Sn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order to obtain effect of the Sn composition on the structural and the optical characteristics, we utilized highresolution X-ray diffraction (HR-XRD), etch pit density (EPD), atomic force microscopy (AFM), Raman spectroscopy, and photocurrent (PC) spectra. The Sn compositions in the Ge1- x Sn x layers were found to be of x = 0.00%, 0.51%, 0.65%, and 0.83%. The root-mean-square (RMS) of the surface roughness of the Ge1- x Sn x layer increased from 2.02 nm to 3.40 nm as the Sn composition was increased from 0.51% to 0.83%, and EPD was on the order of 108 cm-2. The Raman spectra consist of only one strong peak near 300 cm-1, which is assigned to the Ge-Ge LO peaks and the Raman peaks shift to the wave number with increasing Sn composition. Photocurrent spectra show near energy band gap peaks and their peak energies decrease with increasing Sn composition due to band-gap bowing in the Ge1- x Sn x layer. An increase in the band gap bowing parameter was observed with increasing Sn composition.

Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn

Directory of Open Access Journals (Sweden)

Enkhtaivan Lkhagvasuren

2017-04-01

Full Text Available Alloys based on the half-Heusler compound TiNiSn with the addition of Mn or with a substitution of Ti by Mn are investigated as high-temperature thermoelectric materials. In both materials an intrinsic phase separation is observed, similar to TiNiSn where Ti has been partially substituted by Hf, with increasing Mn concentration the phase separation drastically reduces the lattice thermal conductivity while the power factor is increased. The thermoelectric performance of the n-type conducting alloy can be optimized both by substitution of Ti by Mn as well as the addition of Mn.

La5Zn2Sn

Directory of Open Access Journals (Sweden)

Igor Oshchapovsky

2011-11-01

Full Text Available A single crystal of pentalanthanum dizinc stannide, La5Zn2Sn, was obtained from the elements in a resistance furnace. It belongs to the Mo5SiB2 structure type, which is a ternary ordered variant of the Cr5B3 structure type. The space is filled by bicapped tetragonal antiprisms from lanthanum atoms around tin atoms sharing their vertices. Zinc atoms fill voids between these bicapped tetragonal antiprisms. All four atoms in the asymmetric unit reside on special positions with the following site symmetries: La1 (..m; La2 (4/m..; Zn (m.2m; Sn (422.

Effect of indium and antimony doping in SnS single crystals

Energy Technology Data Exchange (ETDEWEB)

Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

2015-03-15

Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

Effect of Cooling Rate on the Longitudinal Modulus of Cu3Sn Phase of Ag-Sn-Cu Amalgam Alloy (Part II

Directory of Open Access Journals (Sweden)

R. H. Rusli

2015-10-01

Full Text Available Effects of cooling rate (at the time of solidification on the elastic constants of Cu3Sn phase of Ag-Sn-Cu dental amalgam alloy were studied. In this study, three types of alloys were made, with the composition Cu-38-37 wt% Sn by means of casting, where each alloy was subjected to different cooling rate, such as cooling on the air (AC, air blown (AB, and quenched in the water (WQ. X-ray diffraction, metallography, and Scanning Electron Microscopy with Energy Dispersive Spectroscopy studies of three alloys indicated the existence of Cu3Sn phase. Determination of the modulus of elasticity of Cu3Sn (ε phase was carried out by the measurement of longitudinal and transversal waves velocity using ultrasonic technique. The result shows that Cu3Sn (ε phase on AC gives higher modulus of elasticity values than those of Cu3Sn (ε on AB and WQ. The high modulus of elasticity value will produce a strong Ag-Sn-Cu dental amalagam alloy.

SN 2013dh in NGC 5936 is probably a type Iax supernova

Science.gov (United States)

Jha, Saurabh W.; McCully, Curtis; Foley, Ryan J.; Cenko, S. Bradley; Zheng, WeiKang; Clubb, Kelsey I.; Shivvers, Isaac; Filippenko, Alexei V.; Tucker, Brad E.; Garnavich, Peter M.

2013-06-01

Further to CBET 3561 (Kumar et al. 2013; Cenko et al. 2013), we have analyzed spectra of SN 2013dh obtained on June 14.3 and June 17.3 UT with the Shane 3-m reflector (+ Kast spectrograph) at Lick Observatory. The observations continue to show that SN 2013dh has a blue continuum with relatively narrow (FWHM approximately 3000 km/s) Fe III absorption.

Syntheses, structural variants and characterization of AInM′S{sub 4} (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS{sub 4} and KInSnS{sub 4} compounds

Energy Technology Data Exchange (ETDEWEB)

Yohannan, Jinu P.; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

2016-06-15

Ten AInM′S{sub 4} (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS{sub 4}(1-β), RbInGeS{sub 4}(2), CsInGeS{sub 4}(3-β), TlInGeS{sub 4}(4-β), RbInSnS{sub 4}(8-β) and CsInSnS{sub 4}(9) compounds with three-dimensional BaGa{sub 2}S{sub 4} structure and CsInGeS{sub 4}(3-α) and TlInGeS{sub 4}(4-α) compounds with a layered TlInSiS{sub 4} structure have tetrahedral [InM′S{sub 4}]{sup −} frameworks. On the other hand, LiInSnS{sub 4}(5) with spinel structure and NaInSnS{sub 4}(6), KInSnS{sub 4}(7), RbInSnS{sub 4}(8-α) and TlInSnS{sub 4}(10) compounds with layered structure have octahedral [InM′S{sub 4}]{sup −} frameworks. NaInSnS{sub 4}(6) and KInSnS{sub 4}(7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS{sub 4} and KInSnS{sub 4} compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S{sub 4} compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS{sub 4} and KInSnS{sub 4} compounds undergo facile topotactic ion-exchange at room temperature.

Enhancing performances of a resistivity-type hydrogen sensor based on Pd/SnO2/RGO nanocomposites.

Science.gov (United States)

Peng, Yitian; Zheng, Lulu; Zou, Kun; Li, Cong

2017-05-26

Palladium/tin oxide/reduced graphene oxide (Pd/SnO 2 /RGO) nanocomposites with Pd and SnO 2 crystalline nanoparticles of high density and uniformity coated on RGO have been synthesized by a two-step reduction process. A novel hydrogen (H 2 ) sensor based on Pd/SnO 2 /RGO nanocomposites was fabricated by placing Pd/SnO 2 /RGO nanocomposites onto a pair of gold electrodes. The Pd/SnO 2 /RGO nanocomposite-based sensor exhibited higher responses than Pd/RGO to H 2 because the introduction of SnO 2 nanoparticles enhances H 2 adsorption and forms a P-N junction with RGO. The sensor shows a high response of 55% to 10 000 ppm H 2 , and a low detection limit, fast response, good selectivity and repeatability due to a combination effect of the Pd and SnO 2 nanoparticles. The studies provide a novel strategy for great potential applications of graphene-based gas sensors.

Advances in Nb3Sn Performance

International Nuclear Information System (INIS)

Godeke, Arno

2008-01-01

Nb 3 Sn wires with non-Cu critical current densities (J c ) that surpass 3 kAmm -2 at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb 3 Sn wires.

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Science.gov (United States)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Effects of intramedullary nails composed of a new β-type Ti-Nb-Sn alloy with low Young's modulus on fracture healing in mouse tibiae.

Science.gov (United States)

Fujisawa, Hirokazu; Mori, Yu; Kogure, Atsushi; Tanaka, Hidetatsu; Kamimura, Masayuki; Masahashi, Naoya; Hanada, Shuji; Itoi, Eiji

2018-01-23

The influence of Young's moduli of materials on the fracture healing process remains unclear. This study aimed to assess the effects of intramedullary nails composed of materials with low Young's moduli on fracture repair. We previously developed a β-type Ti-Nb-Sn alloy with low Young's modulus close to that of human cortical bone. Here, we prepared two Ti-Nb-Sn alloys with Young's moduli of 45 and 78 GPa by heat treatment, and compared their effects on fracture healing. Fracture and nailing were performed in the right tibiae of C57BL/6 mice. The bone healing process was evaluated by microcomputed tomography (micro-CT), histomorphometry, and RT-PCR. We found larger bone volumes of fracture callus in the mice treated with the 45-GPa Ti-Nb-Sn alloy as compared with the 78-GPa Ti-Nb-Sn alloy in micro-CT analyses. This was confirmed with histology at day 14, with accelerated new bone formation and cartilage absorption in the 45-GPa Ti-Nb-Sn group compared with the 78-GPa Ti-Nb-Sn group. Acp5 expression was lower in the 45-GPa Ti-Nb-Sn group than in the 78-GPa Ti-Nb-Sn group at day 10. These findings indicate that intramedullary fixation with nails with a lower Young's modulus offer a greater capacity for fracture repair. Our 45-GPa Ti-Nb-Sn alloy is a promising material for fracture treatment implants. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2018. © 2018 Wiley Periodicals, Inc.

SN 2012fr

DEFF Research Database (Denmark)

Contreras, Carlos; Phillips, M. M.; Burns, Christopher R.

2018-01-01

We present detailed ultraviolet, optical, and near-infrared light curves of the Type Ia supernova (SN) 2012fr, which exploded in the Fornax cluster member NGC 1365. These precise high-cadence light curves provide a dense coverage of the flux evolution from -12 to +140 days with respect to the epo...

VizieR Online Data Catalog: Palomar Transient Factory SNe IIn photometry (Ofek+, 2014)

Science.gov (United States)

Ofek, E. O.; Arcavi, I.; Tal, D.; Sullivan, M.; Gal-Yam, A.; Kulkarni, S. R.; Nugent, P. E.; Ben-Ami, S.; Bersier, D.; Cao, Y.; Cenko, S. B.; De Cia, A.; Filippenko, A. V.; Fransson, C.; Kasliwal, M. M.; Laher, R.; Surace, J.; Quimby, R.; Yaron, O.

2017-07-01

The Palomar Transient Factory (PTF; Law et al. 2009PASP..121.1395L; Rau et al. 2009PASP..121.1334R) and its extension the intermediate PTF (iPTF) found over 2200 spectroscopically confirmed SNe. We selected 19 SNe IIn for which PTF/iPTF has good coverage of the light-curve rise and peak; they are listed in Table 1. Optical spectra were obtained with a variety of telescopes and instruments, including the Double Spectrograph (Oke & Gunn 1982PASP...94..586O) at the Palomar 5 m Hale telescope, the Kast spectrograph (Miller & Stone 1993, Lick Observatory Technical Report 66 (Santa Cruz, CA: Lick Observatory)) at the Lick 3 m Shane telescope, the Low Resolution Imaging Spectrometer (Oke et al. 1995PASP..107..375O) on the Keck-1 10 m telescope, and the Deep Extragalactic Imaging Multi-Object Spectrograph (Faber et al. 2003SPIE.4841.1657F) on the Keck-2 10 m telescope. (2 data files).

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Science.gov (United States)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

CuLi2Sn and Cu2LiSn: Characterization by single crystal XRD and structural discussion towards new anode materials for Li-ion batteries.

Science.gov (United States)

Fürtauer, Siegfried; Effenberger, Herta S; Flandorfer, Hans

2014-12-01

The stannides CuLi 2 Sn (CSD-427095) and Cu 2 LiSn (CSD-427096) were synthesized by induction melting of the pure elements and annealing at 400 °C. The phases were reinvestigated by X-ray powder and single-crystal X-ray diffractometry. Within both crystal structures the ordered CuSn and Cu 2 Sn lattices form channels which host Cu and Li atoms at partly mixed occupied positions exhibiting extensive vacancies. For CuLi 2 Sn, the space group F-43m. was verified (structure type CuHg 2 Ti; a =6.295(2) Å; wR 2 ( F ²)=0.0355 for 78 unique reflections). The 4( c ) and 4( d ) positions are occupied by Cu atoms and Cu+Li atoms, respectively. For Cu 2 LiSn, the space group P 6 3 / mmc was confirmed (structure type InPt 2 Gd; a =4.3022(15) Å, c =7.618(3) Å; wR 2 ( F ²)=0.060 for 199 unique reflections). The Cu and Li atoms exhibit extensive disorder; they are distributed over the partly occupied positions 2( a ), 2( b ) and 4( e ). Both phases seem to be interesting in terms of application of Cu-Sn alloys as anode materials for Li-ion batteries.

Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

Science.gov (United States)

Dobosz, Alexandra; Gancarz, Tomasz

2018-03-01

The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

Structural and thermoelectric properties of the type-I Sn clathrates Cs8Sn46−n(n=0,2) from Density Functional Theory (DFT)

KAUST Repository

Egbele, Peter O.; Shoko, Elvis; Joubert, Daniel P.

2018-01-01

Sn clathrates are promising phonon glass, electron crystal materials (PGEC), in which the phonon free paths are short and the electron free paths are long. We analysed the relaxed structure of Sn clathrates using four different Density Funtional

SN 2010ay IS A LUMINOUS AND BROAD-LINED TYPE Ic SUPERNOVA WITHIN A LOW-METALLICITY HOST GALAXY

Energy Technology Data Exchange (ETDEWEB)

Sanders, N. E.; Soderberg, A. M.; Foley, R. J.; Chornock, R.; Chomiuk, L.; Berger, E. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Valenti, S.; Smartt, S.; Botticella, M. T. [Astrophysics Research Centre, School of Maths and Physics, Queen' s University, Belfast BT7 1NN (United Kingdom); Hurley, K. [Space Sciences Laboratory, University of California Berkeley, 7 Gauss Way, Berkeley, CA 94720 (United States); Barthelmy, S. D.; Gehrels, N.; Cline, T. [NASA Goddard Space Flight Center, Code 661, Greenbelt, MD 20771 (United States); Levesque, E. M. [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, 389-UCB, Boulder, CO 80309 (United States); Narayan, G. [Department of Physics, Harvard University, Cambridge, MA 02138 (United States); Briggs, M. S.; Connaughton, V. [CSPAR, University of Alabama in Huntsville, Huntsville, AL (United States); Terada, Y. [Department of Physics, Saitama University, Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570 (Japan); Golenetskii, S.; Mazets, E., E-mail: nsanders@cfa.harvard.edu [Ioffe Physico-Technical Institute, Laboratory for Experimental Astrophysics, 26 Polytekhnicheskaya, St. Petersburg 194021 (Russian Federation); and others

2012-09-10

We report on our serendipitous pre-discovery detection and follow-up observations of the broad-lined Type Ic supernova (SN Ic) 2010ay at z = 0.067 imaged by the Pan-STARRS1 3{pi} survey just {approx}4 days after explosion. The supernova (SN) had a peak luminosity, M{sub R} Almost-Equal-To -20.2 mag, significantly more luminous than known GRB-SNe and one of the most luminous SNe Ib/c ever discovered. The absorption velocity of SN 2010ay is v{sub Si} Almost-Equal-To 19 Multiplication-Sign 10{sup 3} km s{sup -1} at {approx}40 days after explosion, 2-5 times higher than other broad-lined SNe and similar to the GRB-SN 2010bh at comparable epochs. Moreover, the velocity declines {approx}2 times slower than other SNe Ic-BL and GRB-SNe. Assuming that the optical emission is powered by radioactive decay, the peak magnitude implies the synthesis of an unusually large mass of {sup 56}Ni, M{sub Ni} = 0.9 M{sub Sun }. Applying scaling relations to the light curve, we estimate a total ejecta mass, M{sub ej} Almost-Equal-To 4.7 M{sub Sun }, and total kinetic energy, E{sub K} Almost-Equal-To 11 Multiplication-Sign 10{sup 51} erg. The ratio of M{sub Ni} to M{sub ej} is {approx}2 times as large for SN 2010ay as typical GRB-SNe and may suggest an additional energy reservoir. The metallicity (log (O/H){sub PP04} + 12 = 8.19) of the explosion site within the host galaxy places SN 2010ay in the low-metallicity regime populated by GRB-SNe, and {approx}0.5(0.2) dex lower than that typically measured for the host environments of normal (broad-lined) SNe Ic. We constrain any gamma-ray emission with E{sub {gamma}} {approx}< 6 Multiplication-Sign 10{sup 48} erg (25-150 keV), and our deep radio follow-up observations with the Expanded Very Large Array rule out relativistic ejecta with energy E {approx}> 10{sup 48} erg. We therefore rule out the association of a relativistic outflow like those that accompanied SN 1998bw and traditional long-duration gamma-ray bursts (GRBs), but we place less

Peculiarity of component interaction in {l_brace}Y, Dy{r_brace}-Mn-Sn ternary systems

Energy Technology Data Exchange (ETDEWEB)

Romaka, V.V. [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Konyk, M. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Romaka, L., E-mail: romakal@franko.lviv.ua [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Pavlyuk, V. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Jan Dlugosz University, Institute of Chemistry, Environmental Protection and Biotechnology, al. Armii Krajowej 13/15, 42200 Czestochowa (Poland); Ehrenberg, H. [Institute for Complex Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Tkachuk, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

2011-07-14

Highlights: > {l_brace}Y, Dy{r_brace}-Mn-Sn ternary systems at 770 K are characterized by formation of stannides with general compositions RMn{sub 6}Sn{sub 6} and R{sub 4}Mn{sub 4}Sn{sub 7}. > The crystal structure of YMn{sub 6}Sn{sub 6} was determined by single crystal and powder diffraction methods. > Structural analysis showed that Dy{sub 4}Mn{sub 4}Sn{sub 7} compound is disordered. > Isostructural R{sub 4}Mn{sub 4}Sn{sub 7} compounds were also found with Gd, Tb, Ho, Er, Tm(confirmed), Yb, and Lu. - Abstract: The phase equilibria in the Y-Mn-Sn and Dy-Mn-Sn ternary systems were studied at 770 K by means of X-ray and metallographic analyses in the whole concentration range. Both Y-Mn-Sn and Dy-Mn-Sn systems are characterized by formation of two ternary compounds RMn{sub 6}Sn{sub 6} (MgFe{sub 6}Ge{sub 6}-type, space group P6/mmm) and R{sub 4}Mn{sub 4}Sn{sub 7} (Zr{sub 4}Co{sub 4}Ge{sub 7}-type, space group I4/mmm). The disorder in Dy{sub 4}Mn{sub 4}Sn{sub 7} compound was found by single crystal method. Compounds with the same type of structure were also found with Gd, Tb, Ho, Er, Tm (confirmed), Yb, and Lu and their lattice parameters were determined.

Properties of Sn-doped TiO2 nanotubes fabricated by anodization of co-sputtered Ti–Sn thin films

International Nuclear Information System (INIS)

Kyeremateng, Nana Amponsah; Hornebecq, Virginie; Knauth, Philippe; Djenizian, Thierry

2012-01-01

Self-organized Sn-doped TiO 2 nanotubes (nts) were fabricated for the first time, by anodization of co-sputtered Ti and Sn thin films. This nanostructured material was characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, UV–vis spectroscopy and transmission electron microscopy. Due to their remarkable properties, Sn-doped TiO 2 nts can find potential applications in Li-ion microbatteries, photovoltaics, and catalysis. Particularly, the electrochemical performance as an anode material for Li-ion microbatteries was evaluated in Li test cells. With current density of 70 μA cm −2 (1 C) and cut-off potential of 1 V, Sn-doped TiO 2 nts showed improved performance compared to simple TiO 2 nts, and differential capacity plots revealed that the material undergoes full electrochemical reaction as a Rutile-type TiO 2 .

Evaluación de diferentes concentraciones de algunos reguladores de crecimiento en la multiplicación y enraizamiento <i>in vitro de Limonium var. Misty blue

Directory of Open Access Journals (Sweden)

Chamorro Albeiro Hernán

2007-06-01

Full Text Available

Se evaluaron diferentes concentraciones de reguladores de crecimiento en las fases de multiplicación y enraizamiento <i>in vitro de Limonium var. Misty blue, las cuales son bajas en esta especie. Se trabajó con material <i>in vitro donado por la Empresa La Plazoleta Ltda. Se evaluaron diferentes tipos y concentraciones de citoquininas (kinetina, KIN; 6-bencilaminopurina, BAP; y thidiazuron, TDZ en la fase de multiplicación y dos tipos de auxinas (ácido indolacético, AIA; y ácido indolbutírico, AIB a diferentes concentraciones en la fase de enraizamiento in vitro. En la fase de multiplicación los mejores resultados fueron obtenidos con el uso del medio de cultivo MS (Murashige y Skoog, 1962 suplementado con KIN o BAP a 0,5 mg· L^-1 durante un período de cuatro (4 semanas. Se encontró que concentraciones altas de las citoquininas evaluadas en este trabajo inducen desdiferenciación celular y reducen la tasa de multiplicación, especialmente el TDZ a 0,1 mg· L^-1. En la fase de enraizamiento <i>in vitro se obtuvieron buenos resultados manteniendo las plántulas por un período de tres (3 semanas en medio MS (1962 suplementado con AIB en concentraciones entre 0,5 y 1,0 mg· L^-1, lo cual consiguió un sistema radical adecuado para su posterior endurecimiento. En presencia de AIA no se formaron raíces en ninguna de las concentraciones evaluadas.

Nearby Supernova Factory Observations of SN 2006D: On SporadicCarbon Signatures in Early Type Ia Supernova Spectra

Energy Technology Data Exchange (ETDEWEB)

Thomas, R.C.; Aldering, G.; Antilogus, P.; Aragon, C.; Bailey,S.; Baltay, C.; Baron, E.; Bauer, A.; Buton, C.; Bongard, S.; Copin, Y.; Gangler, E.; Gilles, S.; Kessler, R.; Loken, S.; Nugent, P.; Pain, R.; Parrent, J.; Pecontal, E.; Pereira, R.; Perlmutter, S.; Rabinowitz, D.; Rigaudier, G.; Runge, K.; Scalzo, R.; Smadja, G.; Wang, L.; Weaver, B.A.

2006-10-12

We present four spectra of the Type Ia supernova SN Ia 2006Dextending from -7 to +13 days with respect to B-band maximum. The spectrainclude the strongest signature of unburned material at photosphericvelocities observed in a SN Ia to date. The earliest spectrum exhibits CII absorption features below 14,000 km/s, including a distinctive C IIlambda 6580 absorption feature. The carbon signatures dissipate as the SNapproaches peak brightness. In addition to discussing implications ofphotospheric-velocity carbon for white dwarf explosion models, we outlinesome factors that may influence the frequency of its detection before andaround peak brightness. Two effects are explored in this regard,including depopulation of the C II optical levels by non-LTE effects, andline-of-sight effects resulting from a clumpy distribution of unburnedmaterial with low volume-filling factor.

The complex structure of liquid Cu{sub 6}Sn{sub 5} alloy

Energy Technology Data Exchange (ETDEWEB)

Qin Jingyu; Gu Tingkun; Bian Xiufang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Southern Campus, Jinan 250061 (China); Liu Hui [Shandong High Performance Computing Center, Shandong University, Southern Campus, Jinan 250061 (China)

2009-04-15

By applying ab initio molecular dynamics simulation to liquid Cu{sub 6}Sn{sub 5} alloy, the hetero-coordination tendency is discovered by Bathia-Thornton partial correlation functions and a chemical short-range parameter. However the local structural environment of Sn in l-Cu{sub 6}Sn{sub 5} alloy resembles that of liquid Sn by Voronoi analysis. A new feature, i.e. a subpeak in between the first and second peaks, is discovered by the present method which implies that topologically disordered {beta}-Sn-type structural units may exist in l-Cu{sub 6}Sn{sub 5} alloy. The local density states of electrons show that both Cu-Sn and Sn-Sn bonding exist in l-Cu{sub 6}Sn{sub 5} alloy. This work suggests that chemical short-range order between unlike atoms and self-coordination between Sn atoms coexists in l-Cu{sub 6}Sn{sub 5} alloy.

X-RAY EMISSION FROM SUPERNOVAE IN DENSE CIRCUMSTELLAR MATTER ENVIRONMENTS: A SEARCH FOR COLLISIONLESS SHOCKS

International Nuclear Information System (INIS)

Ofek, E. O.; Gal-Yam, A.; Yaron, O.; Arcavi, I.; Fox, D.; Cenko, S. B.; Filippenko, A. V.; Bloom, J. S.; Sullivan, M.; Gnat, O.; Frail, D. A.; Horesh, A.; Kulkarni, S. R.; Corsi, A.; Quimby, R. M.; Gehrels, N.; Nugent, P. E.; Kasliwal, M. M.; Bildsten, L.; Poznanski, D.

2013-01-01

The optical light curve of some supernovae (SNe) may be powered by the outward diffusion of the energy deposited by the explosion shock (the so-called shock breakout) in optically thick (τ ∼> 30) circumstellar matter (CSM). Recently, it was shown that the radiation-mediated and radiation-dominated shock in an optically thick wind must transform into a collisionless shock and can produce hard X-rays. The X-rays are expected to peak at late times, relative to maximum visible light. Here we report on a search, using Swift/XRT and Chandra, for X-ray emission from 28 SNe that belong to classes whose progenitors are suspected to be embedded in dense CSM. Our sample includes 19 Type IIn SNe, one Type Ibn SN, and eight hydrogen-poor superluminous SNe (SLSN-I such as SN 2005ap). Two SNe (SN 2006jc and SN 2010jl) have X-ray properties that are roughly consistent with the expectation for X-rays from a collisionless shock in optically thick CSM. However, the X-ray emission from SN 2006jc can also be explained as originating in an optically thin region. Thus, we propose that the optical light curve of SN 2010jl is powered by shock breakout in CSM. We suggest that two other events (SN 2010al and SN 2011ht) were too X-ray bright during the SN maximum optical light to be explained by the shock-breakout model. We conclude that the light curves of some, but not all, SNe IIn/Ibn are powered by shock breakout in CSM. For the rest of the SNe in our sample, including all of the SLSN-I events, our X-ray limits are not deep enough and were typically obtained too early (i.e., near the SN maximum light) for definitive conclusions about their nature. Late-time X-ray observations are required in order to further test whether these SNe are indeed embedded in dense CSM. We review the conditions required for a shock breakout in a wind profile. We argue that the timescale, relative to maximum light, for the SN to peak in X-rays is a probe of the column density and the density profile above the

Transport and NMR characteristics of the skutterudite-related compound Ca3Rh4Sn13

Science.gov (United States)

Tseng, C. W.; Kuo, C. N.; Li, B. S.; Wang, L. M.; Gippius, A. A.; Kuo, Y. K.; Lue, C. S.

2018-02-01

We report the electronic properties of the Yb3Rh4Sn13-type single crystalline Ca3Rh4Sn13 by means of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, as well as 119Sn nuclear magnetic resonance (NMR) measurements. The negative sign of the Hall coefficient and Seebeck coefficient at low temperatures suggests that the n-type carriers dominate the electrical transport in Ca3Rh4Sn13, in contrast to the observations in Sr3Rh4Sn13 which has a p-type conduction. Such a finding indicates a significant difference in the electronic features between these two stannides. Furthermore, we analyzed the temperature-dependent 119Sn NMR spin-lattice relaxation rate for Ca3Rh4Sn13, (Sr0.7Ca0.3)3Rh4Sn13, and Sr3Rh4Sn13 to examine the change of the electronic Fermi-level density of states (DOS) in (Sr1-xCax)3Rh4Sn13. It indicates that the Sn 5s partial Fermi-level DOS enhances with increasing the Ca content, being consistent with the trend of the superconducting temperature. Since the total Fermi-level DOS usually obeys the same trend of the partial Fermi-level DOS, the NMR analysis provides microscopic evidence for the correlation between the electronic DOS and superconductivity of the (Sr1-xCax)3Rh4Sn13 system.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique

International Nuclear Information System (INIS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-01-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2 :Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2 :Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

Science.gov (United States)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Isomer shifts and chemical bonding in crystalline Sn(II) and Sn(IV) compounds

International Nuclear Information System (INIS)

Terra, J.; Guenzburger, D.

1991-01-01

First-principles self-consistent Local Density calculations of the electronic structure of clusters representing Sn(II) (SnO, SnF 2 , SnS, SnSe) and Sn(IV) (SnO 2 , SnF 4 ) crystalline compounds were performed. Values of the electron density at the Sn nucleus were obtained and related to measured values of the Moessbauer Isomer Shifts reported in the literature. The nuclear parameter of 119 Sn derived was ΔR/R=(1.58±0.14)x10 -4 . The chemical bonding in the solids was analysed and related to the electron densities obtained. (author)

A Significantly off-center 56Ni Distribution for the Low-Luminosity Type Ia Supernova SN 2016brx from the 100IAS survey

Science.gov (United States)

Dong, Subo; Katz, Boaz; Kollmeier, Juna A.; Kushnir, Doron; Elias-Rosa, N.; Bose, Subhash; Morrell, Nidia; Prieto, J. L.; Chen, Ping; Kochanek, C. S.; Brandt, G. M.; Holoien, T. W.-S.; Gal-Yam, Avishay; Morales-Garoffolo, Antonia; Parker, Stuart; Phillips, M. M.; Piro, Anthony L.; Shappee, B. J.; Simon, Joshua D.; Stanek, K. Z.

2018-06-01

We present nebular-phase spectra of the Type Ia supernova (SN Ia) 2016brx, a member of the 1991bg-like subclass that lies at the faint end of the SN Ia luminosity function. Nebular spectra are available for only three other 1991bg-like SNe, and their Co line centers are all within ≲ 500 km/s of each other. In contrast, the nebular Co line center of SN 2016brx is blue-shifted by >1500 km/s compared to them and by ≈1200 km/s compared to the rest frame. This is a significant shift relative to the narrow nebular line velocity dispersion of ≲ 2000 km/s of these SNe. The large range of nebular line shifts implies that the 56Ni in the ejecta of SN 1991bg-like events is off-center by ˜1000 km/s rather than universally centrally confined as previously suggested. With the addition of SN 2016brx, the Co nebular line shapes of 1991bg-like objects appear to connect with the brighter SNe Ia that show double-peaked profiles, hinting at a continuous distribution of line profiles among SNe Ia. One class of models to produce both off-center and bi-modal 56Ni distributions is collisions of white dwarfs with unequal and equal masses.

Primordial black holes survive SN lensing constraints

Science.gov (United States)

García-Bellido, Juan; Clesse, Sébastien; Fleury, Pierre

2018-06-01

It has been claimed in [arxiv:1712.02240] that massive primordial black holes (PBH) cannot constitute all of the dark matter (DM), because their gravitational-lensing imprint on the Hubble diagram of type Ia supernovae (SN) would be incompatible with present observations. In this note, we critically review those constraints and find several caveats on the analysis. First of all, the constraints on the fraction α of PBH in matter seem to be driven by a very restrictive choice of priors on the cosmological parameters. In particular, the degeneracy between Ωm and α was ignored and thus, by fixing Ωm, transferred the constraining power of SN magnitudes to α. Furthermore, by considering more realistic physical sizes for the type-Ia supernovae, we find an effect on the SN lensing magnification distribution that leads to significantly looser constraints. Moreover, considering a wide mass spectrum of PBH, such as a lognormal distribution, further softens the constraints from SN lensing. Finally, we find that the fraction of PBH that could constitute DM today is bounded by fPBH < 1 . 09(1 . 38) , for JLA (Union 2.1) catalogs, and thus it is perfectly compatible with an all-PBH dark matter scenario in the LIGO band.

Effects of current stressing on the p-Bi2Te3/Sn interfacial reactions

International Nuclear Information System (INIS)

Chan, Hsing-Ting; Lin, Chih-Fan; Yen, Yee-Wen; Chen, Chih-Ming

2016-01-01

The Sn/p-Bi 2 Te 3 /Sn sandwich-type sample was current stressed with a density of 150 A/cm 2 to investigate the effects of current stressing on the p-Bi 2 Te 3 /Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi 2 Te 3 (50 °C) and cathodic p-Bi 2 Te 3 /Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi 2 Te 3 /Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10 −9 cm 2 s −1 at 120 °C. - Highlights: • Sn/p-Bi 2 Te 3 /Sn sandwich-type sample is current stressed with a density of 150 A/cm 2 . • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

THE PRODUCTION RATE OF SN Ia EVENTS IN GLOBULAR CLUSTERS

International Nuclear Information System (INIS)

Washabaugh, Pearce C.; Bregman, Joel N.

2013-01-01

In globular clusters, dynamical evolution produces luminous X-ray emitting binaries at a rate about 200 times greater than in the field. If globular clusters also produce SN Ia at a high rate, it would account for many of the SN Ia production in early-type galaxies and provide insight into their formation. Here we use archival Hubble Space Telescope (HST) images of nearby galaxies that have hosted an SN Ia to examine the rate at which globular clusters produce these events. The location of the SN Ia is registered on an HST image obtained before the event or after the supernova (SN) faded. Of the 36 nearby galaxies examined, 21 had sufficiently good data to search for globular cluster hosts. None of the 21 SNe have a definite globular cluster counterpart, although there are some ambiguous cases. This places an upper limit to the enhancement rate of SN Ia production in globular clusters of about 42 at the 95% confidence level, which is an order of magnitude lower than the enhancement rate for luminous X-ray binaries. Even if all of the ambiguous cases are considered as having a globular cluster counterpart, the upper bound for the enhancement rate is 82 at the 95% confidence level, still a factor of several below that needed to account for half of the SN Ia events. Barring unforeseen selection effects, we conclude that globular clusters are not responsible for producing a significant fraction of the SN Ia events in early-type galaxies.

Phase formation in alloy-type anode materials in the quaternary system Li-Sn-Si-C

Energy Technology Data Exchange (ETDEWEB)

Druee, Martin; Seyring, Martin [Jena Univ. (Germany). Otto Schott Inst. of Materials Research; Liang, Song-Mao; Kozlov, Artem; Schmid-Fetzer, Rainer [Clausthal Univ. of Technology, Clausthal-Zellerfeld (Germany). Inst. of Metallurgy; Song, Xiaoyan [Beijing Univ. of Technology (China). Key Lab. of Advanced Functional Materials; Rettenmayr, Markus [Jena Univ. (Germany). Otto Schott Inst. of Materials Research; Jena Univ. (Germany). Center for Energy and Environmental

2017-11-15

Investigations on the thermodynamics of alloy-type anode materials have been carried out for the quaternary Li-C-Si-Sn system. Phase equilibria and phase stabilities were characterized in the binary subsystems Li-C, Li-Si, Li-Sn. The Calphad method was first used to optimize or completely re-establish all binary subsystems containing Li. For reasons of consistency, the binary subsystem Si-C had to be revisited and its Calphad description was modified. The ternary phase diagrams were then tentatively calculated by extrapolation from the binary subsystems and confirmed by key experiments. No ternary compounds were found. In order to verify the applicability of the anode materials in real batteries, some of the materials were nanostructured by ball milling and spark plasma sintering, the corresponding nanostructures were characterized. Theoretical predictions that nanograined Li{sub 2}C{sub 2} can also be used as cathode material were verified experimentally. The methodologies worked out in the present project (e.g. nanoscale structure transmission electron microscopy analysis, glow discharge optical emission spectroscopy) were also employed in other projects and led to publications concerning other materials such as Mg alloys, carbon nanofibers and an Mn-based antiperovskite.

Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

Directory of Open Access Journals (Sweden)

Luis Villamagua

2016-11-01

Full Text Available We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattice in order to find out the equilibrium configurations and to analyze corresponding density of states (DOS patterns along with the electron localization function (ELF. It has been demonstrated that hydrogen could be solely responsible for the n-type conductivity whereas the oxygen vacancy appears to have not a notable influence upon it. The computational analysis is backed up by some experimental data for undoped tin dioxide.

States in 118Sn from 117Sn(d,p) 118Sn at 12 MeV

International Nuclear Information System (INIS)

Frota-Pessoa, E.

1983-01-01

118 Sn energy levels up to = 5.2 MeV excitation energy are studied in the reaction 117 Sn (d,p) 118 Sn. Deuterons had a bombarding energy of 12 MeV. The protons were analized by a magnetic spectrograph. The detector was nuclear emulsion and the resolution in energy about 10 KeV. The distorted-wave analysis was used to determine l values and spectroscopic strengths. Centers of gravity and the sums of reduced spectroscopic factors are presented for the levels when it was possible to determine the S' value. 66 levels of excitation energy were found which did not appear in previous 117 Sn (d,p) reactions. 40 levels were not found previously in any reaction giving 118 Sn. The results are compared with the known ones. (Author) [pt

`Pd20Sn13' revisited: crystal structure of Pd6.69Sn4.31

Directory of Open Access Journals (Sweden)

Wilhelm Klein

2015-07-01

Full Text Available The crystal structure of the title compound was previously reported with composition `Pd20Sn13' [Sarah et al. (1981. Z. Metallkd, 72, 517–520]. For the original structure model, as determined from powder X-ray data, atomic coordinates from the isostructural compound Ni13Ga3Ge6 were transferred. The present structure determination, resulting in a composition Pd6.69Sn4.31, is based on single crystal X-ray data and includes anisotropic displacement parameters for all atoms as well as standard uncertainties for the atomic coordinates, leading to higher precision and accuracy for the structure model. Single crystals of the title compound were obtained via a solid-state reaction route, starting from the elements. The crystal structure can be derived from the AlB2 type of structure after removing one eighth of the atoms at the boron positions and shifting adjacent atoms in the same layer in the direction of the voids. One atomic site is partially occupied by both elements with a Pd:Sn ratio of 0.38 (3:0.62 (3. One Sn and three Pd atoms are located on special positions with site symmetry 2. (Wyckoff letter 3a and 3b.

Some kinetic properties of DySnSe2 combination

International Nuclear Information System (INIS)

Murguzov, M.I.; Mammadova, E.R.

2008-01-01

Recently, to the acquisition of multi-component alloys and combination in the presence of rare-earth metals (REM) interest has grown considerably. According to preliminary data, in the presence of rare-earth metals you can obtain perspective semiconductor materials which are of practical importance, and can be used in various fields of microelectronics in a complex system of chalcogenides. DySnSe 2 combination is also includes to this system. Physical peculiarities of these combinations have been studied in wide interval. DySnSe 2 combination crystallizes in ortho rhombic crystal system and is an indemnification n-type semiconductor material. The mechanism of electrical conductivity in DySnSe 2 semiconductor combination is complicated and cargo carrier scattering changes at low temperatures. That is why, the mixed type conductivity occurs

Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

Science.gov (United States)

Umezawa, Naoto; Zhou, Wei

2015-03-01

Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

First-principles calculations of structural, elastic, and electronic properties of trigonal ZnSnO{sub 3} under pressure

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi-Jun, E-mail: qijunliu@home.swjtu.edu.cn [School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China); Qin, Han; Jiao, Zhen; Liu, Fu-Sheng [School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China); Liu, Zheng-Tang [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China)

2016-09-01

First-principles calculations of the structural, elastic, mechanical and electronic properties of ilmenite-type ZnSnO{sub 3} under pressure have been investigated in the present paper. Our calculated lattice constants at zero pressure are in agreement with the published theoretical and experimental data. The elastic constants at zero and high pressure have been obtained, which are used to discuss the mechanical stability of ilmenite-type ZnSnO{sub 3}. The mechanical properties such as bulk modulus, shear modulus, Young’s modulus and Poisson’s ratio under pressure have been studied. Electronic properties show that ilmenite-type ZnSnO{sub 3} is shown to be a direct bandgap of 1.063 (GGA-PW91)/3.977 (PBE0) eV. The bandgap increases with the increasing pressure. Moreover, the partial density of states has been analyzed to explain the increased bandgap. - Highlights: • Physical properties of ilmenite-type ZnSnO{sub 3} under pressure have been investigated. • Ilmenite-type ZnSnO{sub 3} behaves in a ductile manner. • Ilmenite-type ZnSnO{sub 3} is a direct bandgap compound with 3.977 eV. • Bandgap of Ilmenite-type ZnSnO{sub 3} increases with the increasing pressure.

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Supernova mechanisms: Before and after SN1987a

International Nuclear Information System (INIS)

Kahana, S.H.

1987-01-01

The impact of SN1987a on theoretical studies of the specific mechanism generating Type II supernovae is examined. The explosion energy extracted from analysis of the light curve for SN 1987a is on the edge of distinguishing between a prompt explosion from a hydrodynamic shock and a delayed, neutrino-induced, explosion. The detection of neutrinos from 1987a is also reanalyzed. 30 refs., 2 tabs

Oxidation of Pb-Sn and Pb-Sn-In alloys

International Nuclear Information System (INIS)

Sluzewski, D.A.; Chang, Y.A.; Marcotte, V.C.

1990-01-01

Air oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides

Analyses of the Sn IX-Sn XII spectra in the EUV region

International Nuclear Information System (INIS)

Churilov, S S; Ryabtsev, A N

2006-01-01

The Sn IX-Sn XII spectra excited in a vacuum spark have been analysed in the 130-160 A wavelength region. The analysis was based on the energy parameter extrapolation in the isonuclear Sn VI-VIII and Sn XIII-XIV sequence. 266 spectral lines belonging to the 4d m -(4d m-1 4f+4p 5 4d m+1 ) (m=6-3) transition arrays were classified in the Sn IX-Sn XII spectra for the first time. All 18 level energies of the 4d 3 configuration and 39 level energies of the strongly interacting 4d 2 4f and 4p 5 4d 4 configurations were established in the Sn XII spectrum. The energy differences between the majority of the 4d m levels and about 40 levels of the 4d m-1 4f+4p 5 4d m+1 configurations were determined in each of the Sn IX, Sn X and Sn XI spectra (m=6-4). As a result, all intense lines were classified in the 130-140 A region relevant to the extreme ultraviolet (EUV) lithography. It was shown that the most of the intense lines in the 2% bandwidth at 135 A belong to the transitions in the Sn XI-Sn XIII spectra

GAMMA RAYS FROM TYPE Ia SUPERNOVA SN 2014J

International Nuclear Information System (INIS)

Churazov, E.; Sunyaev, R.; Grebenev, S.; Isern, J.; Bikmaev, I.; Bravo, E.; Chugai, N.; Jean, P.; Knödlseder, J.; Lebrun, F.; Kuulkers, E.

2015-01-01

The whole set of INTEGRAL observations of Type Ia supernova SN 2014J, covering the period 19–162 days after the explosion, has been analyzed. For spectral fitting the data are split into early and late periods covering days 19–35 and 50–162, respectively, optimized for 56 Ni and 56 Co lines. As expected for the early period, much of the gamma-ray signal is confined to energies below ∼200 keV, while for the late period it is strongest above 400 keV. In particular, in the late period, 56 Co lines at 847 and 1248 keV are detected at 4.7σ and 4.3σ, respectively. The light curves in several representative energy bands are calculated for the entire period. The resulting spectra and light curves are compared with a subset of models. We confirm our previous finding that the gamma-ray data are broadly consistent with the expectations for canonical one-dimensional models, such as delayed detonation or deflagration models for a near-Chandrasekhar mass white dwarf. Late optical spectra (day 136 after the explosion) show rather symmetric Co and Fe line profiles, suggesting that, unless the viewing angle is special, the distribution of radioactive elements is symmetric in the ejecta

Rod-like hierarchical Sn/SnOx@C nanostructures with enhanced lithium storage properties

Science.gov (United States)

Yang, Juan; Chen, Sanmei; Tang, Jingjing; Tian, Hangyu; Bai, Tao; Zhou, Xiangyang

2018-03-01

Rod-like hierarchical Sn/SnOx@C nanostructures have been designed and synthesized via calcining resorcinol-formaldehyde (RF) resin coated Sn-based metal-organic frameworks. The rod-like hierarchical Sn/SnOx@C nanostructures are made of a great number of carbon-wrapped primary Sn/SnOx nanospheres of 100-200 nm in diameter. The as-prepared hierarchical Sn/SnOx@C nanocomposite manifests a high initial reversible capacity of 1177 mAh g-1 and remains 1001 mAh g-1 after 240 cycles at a current density of 200 mA g-1. It delivers outstanding high-rate performance with a reversible capacity of 823 mAh g-1 even at a high current density of 1000 mA g-1. The enhanced electrochemical performances of the Sn/SnOx@C electrode are mainly attributed to the synergistic effect of the unique hierarchical micro/nanostructures and the protective carbon layer.

Structure and magnetic properties of Sm{sub 2}Rh{sub 3}Sn{sub 5}. An intergrowth of TiNiSi- and NdRh{sub 2}Sn{sub 4}-related slabs

Energy Technology Data Exchange (ETDEWEB)

Heying, Birgit; Koesters, Jutta; Hoffmann, Rolf-Dieter; Heletta, Lukas; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2017-07-01

The stannide Sm{sub 2}Rh{sub 3}Sn{sub 5} was obtained by arc-melting of the elements and subsequent annealing at 1070 K in a silica tube. Sm{sub 2}Rh{sub 3}Sn{sub 5} crystallizes with the orthorhombic Y{sub 2}Rh{sub 3}Sn{sub 5} type structure, space group Cmc2{sub 1}, Z=4: a=444.46(8), b=2636.2(4), c=718.3(1) pm, wR=0.0711, 1761 F{sup 2} values and 61 variables. The three crystallographically independent rhodium atoms show tricapped trigonal prismatic coordination by samarium and tin atoms. Sm{sub 2}Rh{sub 3}Sn{sub 5} can be considered as a simple 1:1 intergrowth structure of TiNiSi- and NdRh{sub 2}Sn{sub 4}-related slabs of compositions SmRhSn and SmRh{sub 2}Sn{sub 4}. Temperature dependent magnetic susceptibility data revealed van Vleck type behavior caused by the proximity of the exited {sup 6}H{sub 7/2} state to the {sup 6}H{sub 5/2} ground state of Sm{sup 3+}, and an antiferromagnetic ordering occurs at T{sub N}=3.5(5) K.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

Science.gov (United States)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

La5M3X (M=Sn, Bi; X=Cl, Br, I): exploring the limit of the Mn5Si3-type hosting lattice

International Nuclear Information System (INIS)

Zheng Chong; Mattausch, Hansjuergen; Simon, Arndt

2002-01-01

Three new compounds add to the family of the Mn 5 Si 3 type host-guest lattice. These are La 5 Sn 3 X (X=Cl, Br, I) synthesized from stoichiometric mixtures of La, LaX 3 and Sn heated under Ar atmosphere in sealed Ta ampoules at 850-990 deg. C for 13-62 days. La 5 Sn 3 X crystallize in the space group P6 3 /mcm (No. 193) with lattice parameters a=9.603(1) A, 9.637(1) A and 9.673(1) A; c=6.890(1) A, 6.931(1) A and 6.987(1) A, respectively, for X=Cl, Br and I. Computational analysis using both the extended Hueckel and the local density functional methods showed that the Sn and La site acts as electron reservoir, providing electrons to the interstitials as necessary. This gives rise to a metallic behavior. Susceptibility and conductivity measurements confirmed these predictions. The single crystal structure of La 5 Bi 3 Br is also reported

Zr-rich corner of the Zr-Sn-O diagram

International Nuclear Information System (INIS)

Roberti, L.A.; Arias, D.E.

1993-01-01

The understanding of the effect of light elements (in particular oxygen, nitrogen and hydrogen) on the behaviour of alloys for nuclear use is necessary because of its technological importance. The Zr-Sn-O system is perhaps the most representative of all possible ternary systems which can be used to simulate a simplified Zircaloy-type alloy in which the effect of O can be studied. However, in the specialized literature experimental data on phase equilibria and thermophysical properties of this system are not easily found. In the present work, the equilibrium compositions of the α and β phases of the Zr-Sn-O system at temperatures between 1150 and 1323 K are calculated, using the scarce available information. First results of the calculations show satisfactory coincidences with experimental data. Future work will be oriented towards the proposal of isothermal cross-sections calculated by a modelling of phases with wider Sn and O composition ranges, and involving equilibria with the phases Zr 4 Sn, Zr 5 Sn 3 , ZrO 2 , ZrSnO 4 . (Author)

Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires.

Science.gov (United States)

Hsu, Cheng-Liang; Lu, Ying-Ching

2012-09-21

This study investigates the feasibility of synthesizing high-density transparent Ga(2)O(3)/SnO(2):Ga core-shell nanowires on a sapphire substrate at 1000 °C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga(2)O(3) and SnO(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO(2) and Ga(2)O(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga(2)O(3)/SnO(2):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga(2)O(3) region functions similar to a capacitor and continues to accumulate SnO(2):Ga excited electrons under UV light exposure.

Ultrasonic synthesis of In-doped SnS nanoparticles and their physical properties

Science.gov (United States)

Jamali-Sheini, Farid; Cheraghizade, Mohsen; Yousefi, Ramin

2018-05-01

Indium (In)-doped Tin (II) Sulfide (SnS) nanoparticles (NPs) were synthesized by an ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties were investigated. XRD patterns of the obtained NPs indicated formation of orthorhombic polycrystalline SnS. Field emission scanning electron microscopy exhibited flower-like NPs with particle sizes below 100 nm for both SnS and In-doped SnS samples. Optical analysis showed a decrease in energy band gap of SnS NPs upon In doping. In addition, electrical results demonstrated p-type nature of the synthesized SnS NPs and enhanced electrical conductivity of the NPs due to increased tin vacancy. Dielectric experiments on SnS NPs suggested an electronic polarizations effect to be responsible for changing dielectric properties of the particles, in terms of frequency. Finally, photocatalytic experiments revealed that high degradation power can be obtained using In-doped SnS NPs.

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

Science.gov (United States)

Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

2018-03-01

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

Synthesis, characterization and photocatalytic performance of SnS nanofibers and SnSe nanofibers derived from the electrospinning-made SnO{sub 2} nanofibers

Energy Technology Data Exchange (ETDEWEB)

Cheng, Li; Li, Dan; Dong, Xiangting; Ma, Qianli; Yu, Wensheng; Wang, Xinlu; Yu, Hui; Wang, Jinxian; Liu, Guixia, E-mail: dongxiangting888@163.com [Key Laboratory of Applied Chemistry and Nanotechnology at Universities of Jilin Province, Changchun University of Science and Technology, Changchun (China)

2017-11-15

SnO{sub 2} nanofibers were fabricated by calcination of the electrospun PVP/SnCl{sub 4} composite nanofibers. For the first time, SnS nanofibers and SnSe nanofibers were successfully synthesized by double crucible sulfurization and selenidation methods via inheriting the morphology of SnO{sub 2} nanofibers used as precursors, respectively. X-ray diffraction (XRD) analysis shows SnS nanofibers and SnSe nanofibers are respectively pure orthorhombic phase with space group of Pbnm and Cmcm. Scanning electron microscope (SEM) observation indicates that the diameters of SnS nanofibers and SnSe nanofibers are respectively 140.54±12.80 nm and 96.52±14.17 nm under the 95 % confidence level. The photocatalytic activities of samples were studied by using rhodamine B (Rh B) as degradation agent. When SnS or SnSe nanofibers are employed as the photocatalysts, the respective degradation rates of Rh B solution under the ultraviolet light irradiation after 200 min irradiation are 92.55 % and 92.86 %. The photocatalytic mechanism and formation process of SnS and SnSe nanofibers are also provided. More importantly, this preparation technique is of universal significance to prepare other metal chalcogenides nanofibers. (author)

THE UNUSUALLY LUMINOUS EXTRAGALACTIC NOVA SN 2010U

International Nuclear Information System (INIS)

Czekala, Ian; Berger, E.; Chornock, R.; Marion, G. H.; Margutti, R.; Challis, P.; Pastorello, A.; Botticella, M. T.; Ergon, M.; Sollerman, J.; Smartt, S.; Vinkó, J.; Wheeler, J. C.

2013-01-01

We present observations of the unusual optical transient SN 2010U, including spectra taken 1.03 days to 15.3 days after maximum light that identify it as a fast and luminous Fe II type nova. Our multi-band light curve traces the fast decline (t 2 = 3.5 ± 0.3 days) from maximum light (M V = –10.2 ± 0.1 mag), placing SN 2010U in the top 0.5% of the most luminous novae ever observed. We find typical ejecta velocities of ≈1100 km s –1 and that SN 2010U shares many spectral and photometric characteristics with two other fast and luminous Fe II type novae, including Nova LMC 1991 and M31N-2007-11d. For the extreme luminosity of this nova, the maximum magnitude versus rate of decline relationship indicates a massive white dwarf (WD) progenitor with a low pre-outburst accretion rate. However, this prediction is in conflict with emerging theories of nova populations, which predict that luminous novae from massive WDs should preferentially exhibit an alternate spectral type (He/N) near maximum light.

Investigation of thermoelectricity in KScSn half-Heusler compound

Science.gov (United States)

Shrivastava, Deepika; Acharya, Nikita; Sanyal, Sankar P.

2018-05-01

The electronic and transport properties of KScSn half-Heusler (HH) compound have been investigated using first-principles density functional theory and semi classical Boltzmann transport theory. The electronic band structure and density of states (total and partial) show semiconducting nature of KScSn with band gap 0.48 eV which agree well with previously reported results. The transport coefficient such as electrical conductivity, Seebeck coefficient, electronic thermal conductivity and power factor as a function of chemical potential are evaluated. KScSn has high power factor for p-type doping and is a potential candidate for thermoelectric applications.

Sn-In-Ag phase equilibria and Sn-In-(Ag)/Ag interfacial reactions

International Nuclear Information System (INIS)

Chen Sinnwen; Lee Wanyu; Hsu Chiaming; Yang Chingfeng; Hsu Hsinyun; Wu Hsinjay

2011-01-01

Research highlights: → Thermodynamic models of Sn-In and Sn-In-Ag are developed using the CALPHAD approach. → Reaction layer in the Sn-In-(Ag)/Ag couples at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. → Reactions in the Sn-20 wt%In-2.8 wt%Ag/Ag couples are faster than those in the Sn-20 wt%In/Ag couples. - Abstract: Experimental verifications of the Sn-In and Sn-In-Ag phase equilibria have been conducted. The experimental measurements of phase equilibria and thermodynamic properties are used for thermodynamic modeling by the CALPHAD approach. The calculated results are in good agreement with experimental results. Interfacial reactions in the Sn-In-(Ag)/Ag couples have been examined. Both Ag 2 In and AgIn 2 phases are formed in the Sn-51.0 wt%In/Ag couples reacted at 100 and 150 deg. C, and only the Ag 2 In phase is formed when reacted at 25, 50 and 75 deg. C. Due to the different growth rates of different reaction phases, the reaction layer at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. In the Sn-20.0 wt%In/Ag couples, the ζ phase is formed at 250 deg. C and ζ/AgIn 2 phases are formed at 125 deg. C. Compared with the Sn-20 wt%In/Ag couples, faster interfacial reactions are observed in the Sn-20.0 wt%In-2.8 wt%Ag/Ag couples, and minor Ag addition to Sn-20 wt%In solder increases the growth rates of the reaction phases.

Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

2013-07-01

Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

Magnetic behaviour of cerium in Ce2 Sn5 and Ce3 Sn7, surstructures of Ce Sn3

International Nuclear Information System (INIS)

Stunault, A.

1988-07-01

The compound studied, Ce 2 Sn 5 and Ce 3 Sn 7 are both orthorhombic, surstructure of cubic Ce Sn 3 . Magnetic susceptibility measurements show in both compounds an antiferromagnetic order at low temperature and magnetization shows a high anisotropy. Magnetization densities are determined by polarized neutron diffraction. The cerium site which has two Ce atoms as nearest neighbourgs carries all the magnetism in both structures. For Ce 2 Sn 5 moments are directed as the high magnetization axis and structure is modulated. Ce 3 Sn 7 presents a simple antiferromagnetic order but moment are directed as low magnetization axis. Various transitions towards a ferromagnetic order are presented. Results are interpreted by measuring the difference between energy levels of crystalline field. A model of crystalline field and isotrope exchange agrees well with Ce 3 Sn 7 , but for Ce 2 Sn 7 it is necessary to reduce the magnetic moment which is typical of the Kondo effect [fr

Spectroscopic classification of SN 2018brz as a type Ia supernova before maximum

Science.gov (United States)

Galbany, Lluis; Lopez-Sanchez, Angel R.; Ascasibar, Yago; Fiegert, Kristin

2018-05-01

We report the spectroscopic classification of SN 2018brz (RA=08:33:22.27, DEC=-76:37:39.8) in an anonymous host galaxy. The candidate was discovered by the All-Sky Automated Survey for SuperNovae (ASAS-SN: Shappee et al. 2014) on UT 2018-05-15 at 16.5 mag. Observations were performed on the 4m Anglo-Australian Telescope at Siding Spring Observatory on 2018 May 19 9:15 UT, using Koala+AAOmega and Grisms 580V+1000R (3500-6000A and 6300-7300A).

Synthesis and first-principle calculations of the structural and electronic properties of Ge-substituted type-VIII Ba{sub 8}Ga{sub 16}Sn{sub 30} clathrate

Energy Technology Data Exchange (ETDEWEB)

Shen, Lanxian [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Li, Decong [College of Optoelectronic Engineering, Yunnan Open University, Kunming 650500 (China); Liu, Hongxia; Liu, Zuming [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Deng, Shukang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China)

2016-12-01

In this study, the structural and electronic structural properties of Ba{sub 8}Ga{sub 16}Sn{sub 30−x}Ge{sub x} (0≤x≤30) are determined by the first-principle method on the basis of density functional theory. Consistent with experimental findings, calculated results reveal that Ge atoms preferentially occupy the 2a and 24g sites in these compounds. As the content of Ge in Ge-substituted clathrate is increased, the lattice parameter is decreased, and the structural stability is enhanced. The bandgaps of the compound at 1≤x≤10 are smaller than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. By contrast, the bandgaps of the compound at x>10 are larger than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. The substitution of Ge for Sn affects p-type conductivity but not n-type conductivity. As Ge content increases, the whole conduction band moves to the direction of high energy, and the density of states of valence-band top decreases. The calculated potential energy versus displacement of Ba indicates that the vibration energy of this atom increases as cage size decreases. Because Ge substitution also affects clathrate structural symmetry, the distance of Ba atom deviation from the center of the cage initially increases and subsequently decreases as the Ge content increases.

Ethanol electrooxidation on Pt-Sn and Pt-Sn-W bulk alloys

Energy Technology Data Exchange (ETDEWEB)

Anjos, D.M. dos; Hahn, F.; Leger, J.M.; Kokoh, K.B. [Universite de Poitiers, Poitiers Cedex (France). Centre National de la Recherche Scientifique (CNRS). Equipe Electrocatalyse; Tremiliosi-Filho, G. [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Quimica

2008-07-01

Ethanol oxidation has been studied on Pt-Sn and Pt-Sn-W electrodes prepared in an arc-melting furnace. Different electrochemical techniques like cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activity of these materials. The electro-oxidation process was also investigated by in situ infrared reflectance spectroscopy in order to determine adsorbed intermediates and reaction products. Experimental results indicated that Pt-Sn and Pt-Sn-W alloys are able to oxidize ethanol mainly to acetaldehyde and acetic acid. Adsorbed CO was also detected, demonstrating the viability of splitting the C-C bond in the ethanol molecule during the oxidation process. The adsorbed CO was further oxidized to CO{sub 2}.This reaction product was clearly detected by SNIFTIRS. Pt-Sn-W catalyst showed a better electrochemical performance than Pt-Sn that, in it turn, is better than Pt-alone. (author)

Type Ia Supernova Properties as a Function of the Distance to the Host Galaxy in the SDSS-II SN Survey

Energy Technology Data Exchange (ETDEWEB)

Galbany, Lluis [Institut de Fisica d' Altes Energies (IFAE), Barcelona (Spain); et al.

2012-08-20

We use type-Ia supernovae (SNe Ia) discovered by the SDSS-II SN Survey to search for dependencies between SN Ia properties and the projected distance to the host galaxy center, using the distance as a proxy for local galaxy properties (local star-formation rate, local metallicity, etc.). The sample consists of almost 200 spectroscopically or photometrically confirmed SNe Ia at redshifts below 0.25. The sample is split into two groups depending on the morphology of the host galaxy. We fit light-curves using both MLCS2k2 and SALT2, and determine color (AV, c) and light-curve shape (delta, x1) parameters for each SN Ia, as well as its residual in the Hubble diagram. We then correlate these parameters with both the physical and the normalized distances to the center of the host galaxy and look for trends in the mean values and scatters of these parameters with increasing distance. The most significant (at the 4-sigma level) finding is that the average fitted AV from MLCS2k2 and c from SALT2 decrease with the projected distance for SNe Ia in spiral galaxies. We also find indications that SNe in elliptical galaxies tend to have narrower light-curves if they explode at larger distances, although this may be due to selection effects in our sample. We do not find strong correlations between the residuals of the distance moduli with respect to the Hubble flow and the galactocentric distances, which indicates a limited correlation between SN magnitudes after standardization and local host metallicity.

Host galaxy spectra and consequences for supernova typing from the SDSS SN survey

Energy Technology Data Exchange (ETDEWEB)

Olmstead, Matthew D.; Brown, Peter J.; Brownstein, Joel R.; Dawson, Kyle S. [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States); Sako, Masao; Gupta, Ravi R. [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Bassett, Bruce; Kunz, Martin [African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, 7945 (South Africa); Bizyaev, Dmitry; Brinkmann, J.; Brewington, Howard; Ebelke, Garrett L. [Apache Point Observatory, P.O. Box 59, Sunspot, NM 88349 (United States); Campbell, Heather [Institute of Astronomy, Madingley Road, Cambridge CB4 0HA (United Kingdom); D' Andrea, Chris B.; Lampeitl, Hubert [Institute of Cosmology and Gravitation, Dennis Sciama Building, University of Portsmouth, Portsmouth, PO1 3FX (United Kingdom); Frieman, Joshua A. [Center for Particle Astrophysics, Fermi National Accelerator Laboratory, P.O. Box 500, Batavia, IL 60510 (United States); Galbany, Lluís [Institut de Física d' Altes Energies, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Hlozek, Renee [Department of Astrophysics, Peyton Hall, 4 Ivy Lane, Princeton, NJ 08544 (United States); Jha, Saurabh W., E-mail: olmstead@physics.utah.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); and others

2014-04-01

We present the spectroscopy from 5254 galaxies that hosted supernovae (SNe) or other transient events in the Sloan Digital Sky Survey II (SDSS-II). Obtained during SDSS-I, SDSS-II, and the Baryon Oscillation Spectroscopic Survey, this sample represents the largest systematic, unbiased, magnitude limited spectroscopic survey of SN host galaxies. Using the host galaxy redshifts, we test the impact of photometric SN classification based on SDSS imaging data with and without using spectroscopic redshifts of the host galaxies. Following our suggested scheme, there are a total of 1166 photometrically classified SNe Ia when using a flat redshift prior and 1126 SNe Ia when the host spectroscopic redshift is assumed. For 1024 (87.8%) candidates classified as likely SNe Ia without redshift information, we find that the classification is unchanged when adding the host galaxy redshift. Using photometry from SDSS imaging data and the host galaxy spectra, we also report host galaxy properties for use in future analysis of SN astrophysics. Finally, we investigate the differences in the interpretation of the light curve properties with and without knowledge of the redshift. Without host galaxy redshifts, we find that SALT2 light curve fits are systematically biased toward lower photometric redshift estimates and redder colors in the limit of low signal-to-noise data. The general improvements in performance of the light curve fitter and the increased diversity of the host galaxy sample highlights the importance of host galaxy spectroscopy for current photometric SN surveys such as the Dark Energy Survey and future surveys such as the Large Synoptic Survey Telescope.

Synthesis and characterization of different morphological SnS nanomaterials

International Nuclear Information System (INIS)

Chaki, Sunil H; Chaudhary, Mahesh D; Deshpande, M P

2014-01-01

SnS in three nano forms possessing different morphologies such as particles, whiskers and ribbons were synthesised by chemical route. The morphology variation was brought about in the chemical route synthesis by varying a synthesis parameter such as temperature and influencing the synthesis by use of surfactant. The elemental composition determination by energy dispersive analysis of x-rays (EDAX) showed that all three synthesized SnS nanomaterials were tin deficient. The x-ray diffraction (XRD) study of the three SnS nanomaterials showed that all of them possess orthorhombic structure. The Raman spectra of the three SnS nanomaterials showed that all three samples possess three common distinguishable peaks. In them two peaks lying at 98 ± 1 cm −1 and 224 ± 4 cm −1 are the characteristic A g mode of SnS. The third peak lying at 302 ± 1 cm −1 is associated with secondary Sn 2 S 3 phase. The transmission electron microscopy (TEM) confirmed the respective morphologies. The optical analysis showed that they possess direct as well as indirect optical bandgap. The electrical transport properties study on the pellets prepared from the different nanomaterials of SnS showed them to be semiconducting and p-type in nature. The current–voltage (I–V) plots of the silver (Ag)/SnS nanomaterials pellets for dark and incandescent illumination showed that all configurations showed good ohmic behaviour except Ag/SnS nanoribbons pellet configuration under illumination. All the obtained results are discussed in detail. (paper)

Hydrothermal Synthesis and Structural Characterization of NiO/SnO2 Composites and Hydrogen Sensing Properties

Directory of Open Access Journals (Sweden)

Chao Wei

2015-01-01

Full Text Available Pure SnO2 and NiO doped SnO2 nanostructures were successfully synthesized via a simple and environment-friendly hydrothermal method. X-ray powder diffraction (XRD, scanning electron microscopy (SEM, energy dispersive X-ray spectroscopy (EDS, and X-ray photoelectron spectra (XPS were used to investigate the crystalline structures, surface morphologies and microstructures, and element components and their valences of the as-synthesized samples. Furthermore, planar chemical gas sensors based on the synthesized pure SnO2 and NiO/SnO2 composites were fabricated and their sensing performances to hydrogen, an important fault characteristic gas dissolved in power transformer oil, were investigated in detail. Gas sensing experiments indicate that the NiO/SnO2 composites showed much higher gas response and lower working temperature than those of pure SnO2, which could be ascribed to the formation of p-n heterojunctions between p-type NiO and n-type SnO2. These results demonstrate that the as-synthesized NiO/SnO2 composites a promising hydrogen sensing material.

Phase diagram of SnTe-CdSe cross-section of SnTe+CdSe reversible SnSe+CdTe ternary reciprocal system

International Nuclear Information System (INIS)

Dubrovin, I.V.; Budennaya, L.D.; Mizetskaya, I.B.; Sharkina, Eh.V.

1986-01-01

Phase equilibrium diagram of SnTe-CdSe cross-section of Sn, Cd long Te, Se ternary reciprocal system is investigated using the methods of differential thermal, X-ray phase, and microstructural analyses. Maximum length of solid solutions on the base of SnTe corresponds to approximately 14 mol.% at 1050 K and approximately 3 mol.% of CdSe at 670 K. Region of solid solutions on the base of CdSe corresponds to less than 1 mol.% of SnTe at room temperature. SnTe-CdSe cross-section is not a quasibinar one. Equilibrium is shifted to the left in the SnTe+CdSe reversible SnSe+CdTe reciprocal system

Influence of Sn content on PtSn/C catalysts for electrooxidation of C{sub 1}-C{sub 3} alcohols: Synthesis, characterization, and electrocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae Hong; Choi, Sung Mook; Nam, Sang Hoon; Seo, Min Ho; Kim, Won Bae [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea); Choi, Sun Hee [Pohang Accelerator Laboratory, San-31 Hyoja-dong, Pohang, Kyungbuk 790-984 (Korea)

2008-07-16

A series of carbon-supported bimetallic PtSn catalysts for the electrooxidation of C{sub 1}-C{sub 3} alcohols (i.e., methanol (C{sub 1}), ethanol (C{sub 2}), and 1-propanol (C{sub 3})) were prepared with different Pt:Sn atomic ratios using borohydride reduction method combined with freeze-drying procedure at room temperature. The catalysts were investigated by employing various physicochemical analyses: X-ray diffraction (XRD), transmission electron microscopy (TEM) and extended X-ray absorption fine structure (EXAFS) to investigate the structural modification, and X-ray photoelectron spectroscopy (XPS) and X-ray absorption-near-edge spectroscopy (XANES) to characterize the change in electronic features. The variation of Sn content by forming PtSn alloys causes significant structural and electronic modifications of Pt crystallites, resulting in increases of lattice parameter and decreases of the Pt 5d band vacancies with Sn content. Cyclic voltammetry (CV) measurements showed that the addition of Sn into the Pt catalyst promotes the electro-catalytic activities for the electrooxidations of C{sub 1}, C{sub 2}, and C{sub 3} alcohols, in which the maximum activities appeared at different Sn contents for the C{sub 1}-C{sub 3} alcohols. In particular, a shift in optimum Pt:Sn composition was observed in that the Sn content required to reach the maximum peak current density was increased with the increasing number of carbon atoms in the C{sub 1}-C{sub 3} alcohols. Both the geometric and electronic effects with variation of Sn content are in close relationship in the bimetallic PtSn catalysts, consequently affecting the electrocatalytic activities by showing volcano-type behaviors over the electrooxidation of the individual alcohol. (author)

Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}: Two stannide intermetallics with low-dimensional iron sublattices

Energy Technology Data Exchange (ETDEWEB)

Calta, Nicholas P. [Department of Chemistry, Northwestern University (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University (United States); Materials Science Division, Argonne National Laboratory (United States)

2016-04-15

This article reports two new Hf-rich intermetallics synthesized using Sn flux: Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}. Hf{sub 3}Fe{sub 4}Sn{sub 4} adopts an ordered variant the Hf{sub 3}Cu{sub 8} structure type in orthorhombic space group Pnma with unit cell edges of a=8.1143(5) Å, b=8.8466(5) Å, and c=10.6069(6) Å. Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}, on the other hand, adopts a new structure type in Cmc2{sub 1} with unit cell edges of a=5.6458(3) Å, b=35.796(2) Å, and c=8.88725(9) Å for x=0. It exhibits a small amount of phase width in which Sn substitutes on one of the Fe sites. Both structures are fully three-dimensional and are characterized by pseudo one- and two-dimensional networks of Fe–Fe homoatomic bonding. Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} exhibits antiferromagnetic order at T{sub N}=46(2) K and its electrical transport behavior indicates that it is a normal metal with phonon-dictated resistivity. Hf{sub 3}Fe{sub 4}Sn{sub 4} is also an antiferromagnet with a rather high ordering temperature of T{sub N}=373(5) K. Single crystal resistivity measurements indicate that Hf{sub 3}Fe{sub 4}Sn{sub 4} behaves as a Fermi liquid at low temperatures, indicating strong electron correlation. - Graphical abstract: Slightly different growth conditions in Sn flux produce two new intermetallic compounds: Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}. - Highlights: • Single crystals of both Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} were grown using Sn flux. • The crystal structures were determined using single crystal X-ray diffraction. • The Fe moments in Hf{sub 3}Fe{sub 4}Sn{sub 4} display AFM order below T{sub N}=373 K. • The Fe moments in Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} display AFM order below T{sub N}=46 K.

Structural and magnetic properties of Mn{sub 50}Fe{sub 50−x}Sn{sub x} (x=10, 15 and 20) alloys

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Tanmoy [LCMP, S.N. Bose National Centre for Basic Sciences, Kolkata 700106 (India); Agarwal, Sandeep [Haldia Institute of Technology, Haldia 721657 (India); Mukhopadhyay, P.K., E-mail: pkm@bose.res.in [LCMP, S.N. Bose National Centre for Basic Sciences, Kolkata 700106 (India)

2016-11-15

In this work we report measurements and comparisons of the structural, magnetic and transport properties of a series of Mn{sub 50}Fe{sub 50−x}Sn{sub x} alloys (x=10, 15 and 20). We found that while the lower Sn composition sample stabilized in β-Mn-type crystallographic phase, the higher Sn composition alloys contained both β-Mn-type as well as Mn{sub 3}Sn-type hexagonal DO{sub 19} phases. Through d.c. and a.c. magnetic property measurements we have established the existence of a ferromagnetic transition near room temperature followed by a spin reorientation at lower temperature in the Mn{sub 3}Sn-type crystallographic phase of the alloys. Our resistivity study also revealed an interesting behavior with negative temperature coefficient (TCR) in these alloys. - Highlights: • Mn{sub 50}Fe{sub 50-x}Sn{sub x} alloys were studied over a limited concentration range. • Lower Sn alloys behaved similar to ß-Mn alloys both structurally and magnetically. • Higher Sn alloys showed magnetic transitions similar to Mn{sub 3}Sn and Fe{sub 3}Sn. • Resistivity showed bad metallic behavior with negetive temperature coefficient.

Kinetics of photo-activated charge carriers in Sn:CdS

Energy Technology Data Exchange (ETDEWEB)

Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE CSR, University Campus, Khandwa Road, Indore (M.P.)-452001 (India); Panda, Richa [S.S. Jain Subodh Girls College, Airport Road Sanganer, Jaipur - 302029 (India)

2016-05-23

Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat

Energy Technology Data Exchange (ETDEWEB)

Sabar, D Hutagalung [Universitas Sumatera Utara, Medan (Indonesia). Dept. of Physics; Sakrani, Samsudi; Wahab, Yussof [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

1994-12-31

Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system.

Effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions

Energy Technology Data Exchange (ETDEWEB)

Chan, Hsing-Ting; Lin, Chih-Fan [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Yen, Yee-Wen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan (China); Chen, Chih-Ming, E-mail: chencm@nchu.edu.tw [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2016-05-25

The Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample was current stressed with a density of 150 A/cm{sup 2} to investigate the effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi{sub 2}Te{sub 3} (50 °C) and cathodic p-Bi{sub 2}Te{sub 3}/Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi{sub 2}Te{sub 3}/Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10{sup −9} cm{sup 2} s{sup −1} at 120 °C. - Highlights: • Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample is current stressed with a density of 150 A/cm{sup 2}. • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

The RELixSn2 (RE=La–Nd, Sm, and Gd; 0≤x<1) series revisited. Synthesis, crystal chemistry, and magnetic susceptibilities

International Nuclear Information System (INIS)

Makongo, Julien P.A.; Suen, Nian-Tzu; Guo, Shengping; Saha, Shanta; Greene, Richard; Paglione, Johnpierre; Bobev, Svilen

2014-01-01

This study is concerned with the ternary compounds RELi x Sn 2 (RE=La–Nd, Sm, and Gd; 0≤x 2 phases. These materials crystallize with the base-centered orthorhombic space group Cmcm (No. 63), and can be formally assigned with the CeNiSi 2 structure type (Pearson symbol oC16). Our systematic single-crystal X-ray diffraction studies revealed substantial Li-deficiencies in all cases, with SmSn 2 (space group Cmmm, ZrGa 2 structure type, Pearson symbol oC12) and GdSn 2 (space group Cmcm, ZrSi 2 structure type, Pearson symbol oC12) being completely lithium-free. The structure refinements also uncovered positional disorder on the Sn site neighboring the vacancies. The Sn-disorder and the Li-deficiency correlate, and vary monotonically with the decreased size of the rare-earth atoms in the order RE=La–Nd. The SmSn 2 and GdSn 2 structures are devoid of any disorder. Temperature-dependent studies of the magnetic response of the title compounds are also presented and discussed. -- Graphical abstract: RELi x Sn 2 (RE=La–Nd, 0≤x 2 structure type (a). The Sn-disorder and the Li-deficiency correlate, and vary monotonically with the decreased size of the rare-earth atoms in the order RE=La–Nd. The SmSn 2 (b) and GdSn 2 (c) structures are devoid of any disorder. Highlights: • The crystal structures of the RELi x Sn 2 (RE=La–Nd, 0≤x 2 structure type or defect variant of the CeNiSi 2 structure type. • SmSn 2 is isotypic with the ZrGa 2 structure, while RESn 2 (RE=Gd–Lu) are isotypic with the ZrSi 2 structure

TbNb6Sn6: the first ternary compound from the rare earth–niobium–tin system

Directory of Open Access Journals (Sweden)

Viktor Hlukhyy

2010-12-01

Full Text Available The title compound, terbium hexaniobium hexastannide, TbNb6Sn6, is the first ternary compound from the rare earth–niobium–tin system. It has the HfFe6Ge6 structure type, which can be analysed as an intergrowth of the Zr4Al3 and CaCu5 structures. All the atoms lie on special positions; their coordination geometries and site symmetries are: Tb (dodecahedron 6/mmm; Nb (distorted icosahedron 2mm; Sn (Frank–Caspar polyhedron, CN = 14–15 6mm and overline{6}m2; Sn (distorted icosahedron overline{6}m2. The structure contains a graphite-type Sn network, Kagome nets of Nb atoms, and Tb atoms alternating with Sn2 dumbbells in the channels.

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Energy Technology Data Exchange (ETDEWEB)

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-02-23

Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

Energy Technology Data Exchange (ETDEWEB)

Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol, E-mail: yckang@pknu.ac.kr

2016-12-15

Highlights: • We deposit CuSn thin films on a Si substrate with various Cu/Sn ratio. • Antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time increased. • XPS was utilized to assign the chemical environment of CuSn thin films before and after antibacterial test. - Abstract: We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

Synthesis and molecular structures of niobocene derivatives containing Nb-Sn-Nb metallochain

International Nuclear Information System (INIS)

Skripkin, Yu.V.; Volkov, O.G.; Pasynskij, A.A.

1985-01-01

The [Cp 2 Nb(CO)] 2 SnCl 2 (1) complex is synthesized in the form of crystals with 63% yield by the Cp 2 Nb(CO)H reaction wih SnCl 4 in THF in the presence of Et 3 N. The complex 1 is also prepared by interaction of Cp 2 Nb(CO)H with Cp 2 Nb(CO)SnCl 3 with 16% yield. The crystalline more sluble analog [(CH 3 C 5 H 4 ) 2 Nb(CO)] 2 ShCl 2 (2) is extracted, which contains the chain of Nb-Sn-Nb with short Nb-Sn(2.840)2)A bonds and 140.69(5) deg angle between them. The (Cp 2 NbH) 2 Sn(Cl)Et (3) complex is prepared wih 12% yield, possessing the structure analogous to type 2. In 3 each fragment CpNb is connected with the terminal hydride (Nb-H, 1.66(1) and 1.69(1)A) atom forms shortened bond with tin atom Nb-Sn 2.868(1) and 2.856(1) A, NbSnNb angle is 129.44(5)

Spectral and ion emission features of laser-produced Sn and SnO2 plasmas

Science.gov (United States)

Hui, Lan; Xin-Bing, Wang; Du-Luo, Zuo

2016-03-01

We have made a detailed comparison of the atomic and ionic debris, as well as the emission features of Sn and SnO2 plasmas under identical experimental conditions. Planar slabs of pure metal Sn and ceramic SnO2 are irradiated with 1.06 μm, 8 ns Nd:YAG laser pulses. Fast photography employing an intensified charge coupled device (ICCD), optical emission spectroscopy (OES), and optical time of flight emission spectroscopy are used as diagnostic tools. Our results show that the Sn plasma provides a higher extreme ultraviolet (EUV) conversion efficiency (CE) than the SnO2 plasma. However, the kinetic energies of Sn ions are relatively low compared with those of SnO2. OES studies show that the Sn plasma parameters (electron temperature and density) are lower compared to those of the SnO2 plasma. Furthermore, we also give the effects of the vacuum degree and the laser pulse energy on the plasma parameters. Project supported by the National Natural Science Foundation of China (Grant No. 11304235) and the Director Fund of WNLO, China.

Nitrogen-Doped Carbon-Encapsulated SnO2@Sn Nanoparticles Uniformly Grafted on Three-Dimensional Graphene-like Networks as Anode for High-Performance Lithium-Ion Batteries.

Science.gov (United States)

Li, Yunyong; Zhang, Haiyan; Chen, Yiming; Shi, Zhicong; Cao, Xiaoguo; Guo, Zaiping; Shen, Pei Kang

2016-01-13

A peculiar nanostructure consisting of nitrogen-doped, carbon-encapsulated (N-C) SnO2@Sn nanoparticles grafted on three-dimensional (3D) graphene-like networks (designated as N-C@SnO2@Sn/3D-GNs) has been fabricated via a low-cost and scalable method, namely an in situ hydrolysis of Sn salts and immobilization of SnO2 nanoparticles on the surface of 3D-GNs, followed by an in situ polymerization of dopamine on the surface of the SnO2/3D-GNs, and finally a carbonization. In the composites, three-layer core-shell N-C@SnO2@Sn nanoparticles were uniformly grafted onto the surfaces of 3D-GNs, which promotes highly efficient insertion/extraction of Li(+). In addition, the outermost N-C layer with graphene-like structure of the N-C@SnO2@Sn nanoparticles can effectively buffer the large volume changes, enhance electronic conductivity, and prevent SnO2/Sn aggregation and pulverization during discharge/charge. The middle SnO2 layer can be changed into active Sn and nano-Li2O during discharge, as described by SnO2 + Li(+) → Sn + Li2O, whereas the thus-formed nano-Li2O can provide a facile environment for the alloying process and facilitate good cycling behavior, so as to further improve the cycling performance of the composite. The inner Sn layer with large theoretical capacity can guarantee high lithium storage in the composite. The 3D-GNs, with high electrical conductivity (1.50 × 10(3) S m(-1)), large surface area (1143 m(2) g(-1)), and high mechanical flexibility, tightly pin the core-shell structure of the N-C@SnO2@Sn nanoparticles and thus lead to remarkably enhanced electrical conductivity and structural integrity of the overall electrode. Consequently, this novel hybrid anode exhibits highly stable capacity of up to 901 mAh g(-1), with ∼89.3% capacity retention after 200 cycles at 0.1 A g(-1) and superior high rate performance, as well as a long lifetime of 500 cycles with 84.0% retention at 1.0 A g(-1). Importantly, this unique hybrid design is expected to be

Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

Science.gov (United States)

Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

2018-06-01

We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

EARLY ULTRAVIOLET/OPTICAL EMISSION OF THE TYPE Ib SN 2008D

Energy Technology Data Exchange (ETDEWEB)

Bersten, Melina C.; Nomoto, Ken' ichi [Kavli Institute for the Physics and Mathematics of the Universe, Todai Institutes for Advanced Study, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Tanaka, Masaomi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Tominaga, Nozomu [Department of Physics, Faculty of Science and Engineering, Konan University, 8-9-1 Okamoto, Kobe, Hyogo 658-8501 (Japan); Benvenuto, Omar G., E-mail: melina.bersten@ipmu.jp [Facultad de Ciencias Astronomicas y Geofisicas, Universidad Nacional de La Plata, Paseo del Bosque S/N, B1900FWA La Plata (Argentina)

2013-04-20

We propose an alternative explanation for the post-breakout emission of SN 2008D associated with the X-ray transient 080109. Observations of this object show a very small contrast of 0.35 dex between the light-curve minimum occurring soon after the breakout, and the main luminosity peak which is due to radioactive heating of the ejecta. Hydrodynamical models show that the cooling of a shocked Wolf-Rayet star leads to a much greater difference ({approx}> 0.9 dex). Our proposed scenario is that of a jet produced during the explosion which deposits {sup 56}Ni-rich material in the outer layers of the ejecta. The presence of high-velocity radioactive material allows us to reproduce the complete luminosity evolution of the object. Without outer {sup 56}Ni it could be possible to reproduce the early emission purely from cooling of the shocked envelope by assuming a larger progenitor than a Wolf-Rayet star, but that would require an initial density structure significantly different from what is predicted by stellar evolution models. Analytic models of the cooling phase have been proposed reproduce the early emission of SN 2008D with an extended progenitor. However, we found that the models are valid only until 1.5 days after the explosion where only two data of SN 2008D are available. We also discuss the possibility of the interaction of the ejecta with a binary companion, based on published analytic expressions. However, the binary separation required to fit the early emission should be {approx}< 3 R{sub Sun }, which is too small for a system containing two massive stars.

Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

Directory of Open Access Journals (Sweden)

Kovaliuk T. T.

2015-12-01

Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

Quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Iyer, Abishek K.; Lee, Emma J.; Bernard, Guy M.; Michaelis, Vladimir K.; Mar, Arthur [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Yin, Wenlong [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang (China)

2017-12-13

The quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7} were prepared by reactions of the elements at 1050 C and 950 C, respectively. They adopt noncentrosymmetric structures [hexagonal, space group P6{sub 3}, Z = 2; a = 10.2993(11) Aa, c = 6.0921(6) Aa for La{sub 3}Sn{sub 0.5}InS{sub 7}; a = 10.6533(7) Aa, c = 6.4245(4) Aa for La{sub 3}Sn{sub 0.5}InSe{sub 7}] in which the half-occupancy of Sn atoms within octahedral sites classifies them as belonging to the La{sub 3}Mn{sub 0.5}SiS{sub 7}-type branch of the large family of quaternary rare-earth chalcogenides RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7}. The site distribution in La{sub 3}Sn{sub 0.5}InCh{sub 7}, with higher-valent Sn atoms occupying octahedral instead of tetrahedral sites, is reversed from the typical situation observed in other RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7} compounds. The ordered distribution of Sn atoms in octahedral sites and In atoms in tetrahedral sites was evaluated by bond valence sum analyses. Moreover, {sup 119}Sn solid-state nuclear magnetic resonance (NMR) spectroscopy confirms the occupation of Sn{sup 4+} species exclusively within octahedral sites. An optical bandgap of 1.45 eV was found for La{sub 3}Sn{sub 0.5}InS{sub 7}. Band structure calculations on an ordered superstructure model of La{sub 3}Sn{sub 0.5}InS{sub 7} reveal that avoidance of strongly Sn-S antibonding levels is an important driving force for the Sn deficiency. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Yb5Ni4Sn10 and Yb7Ni4Sn13: New polar intermetallics with 3D framework structures

International Nuclear Information System (INIS)

Lei Xiaowu; Sun Zhongming; Li Longhua; Zhong Guohua; Hu Chunli; Mao Jianggao

2010-01-01

The title compounds have been obtained by solid state reactions of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. Yb 5 Ni 4 Sn 10 adopts the Sc 5 Co 4 Si 10 structure type and crystallizes in the tetragonal space group P4/mbm (No. 127) with cell parameters of a=13.785(4) A, c=4.492 (2) A, V=853.7(5) A 3 , and Z=2. Yb 7 Ni 4 Sn 13 is isostructural with Yb 7 Co 4 InGe 12 and crystallizes in the tetragonal space group P4/m (No. 83) with cell parameters of a=11.1429(6) A, c=4.5318(4) A, V=562.69(7) A 3 , and Z=1. Both structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are occupied by the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic. These results are in agreement with those from temperature-dependent resistivity and magnetic susceptibility measurements. - Graphical abstract: Two new ytterbium nickel stannides, namely, Yb 5 Ni 4 Sn 10 and Yb 7 Ni 4 Sn 13 , have been synthesized and structurally characterized by single-crystal X-ray diffraction studies. Both their structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are situated by all the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic, which are in accordance with the results from temperature-dependent resistivity and magnetic susceptibility measurements.

Growth of highly textured SnS on mica using an SnSe buffer layer

International Nuclear Information System (INIS)

Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

2014-01-01

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

SN 2008D: A WOLF-RAYET EXPLOSION THROUGH A THICK WIND

International Nuclear Information System (INIS)

Svirski, Gilad; Nakar, Ehud

2014-01-01

Supernova (SN) 2008D/XRT 080109 is considered to be the only direct detection of a shock breakout from a regular SN to date. While a breakout interpretation was favored by several papers, inconsistencies remain between the observations and current SN shock breakout theory. Most notably, the duration of the luminous X-ray pulse is considerably longer than expected for a spherical breakout through the surface of a type Ibc SN progenitor, and the X-ray radiation features, mainly its flat spectrum and its luminosity evolution, are enigmatic. We apply a recently developed theoretical model for the observed radiation from a Wolf-Rayet SN exploding through a thick wind and show that it naturally explains all of the observed features of SN 2008D X-ray emission, including the energetics, the spectrum, and the detailed luminosity evolution. We find that the inferred progenitor and SN parameters are typical for an exploding Wolf-Rayet. A comparison of the wind density found at the breakout radius and the density at much larger radii, as inferred by late radio observations, suggests an enhanced mass-loss rate taking effect about 10 days prior to the SN explosion. This finding joins accumulating evidence for a possible late phase in the stellar evolution of massive stars, involving vigorous mass loss a short time before the SN explosion

SN 2008D: A WOLF-RAYET EXPLOSION THROUGH A THICK WIND

Energy Technology Data Exchange (ETDEWEB)

Svirski, Gilad; Nakar, Ehud [Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978 (Israel)

2014-06-10

Supernova (SN) 2008D/XRT 080109 is considered to be the only direct detection of a shock breakout from a regular SN to date. While a breakout interpretation was favored by several papers, inconsistencies remain between the observations and current SN shock breakout theory. Most notably, the duration of the luminous X-ray pulse is considerably longer than expected for a spherical breakout through the surface of a type Ibc SN progenitor, and the X-ray radiation features, mainly its flat spectrum and its luminosity evolution, are enigmatic. We apply a recently developed theoretical model for the observed radiation from a Wolf-Rayet SN exploding through a thick wind and show that it naturally explains all of the observed features of SN 2008D X-ray emission, including the energetics, the spectrum, and the detailed luminosity evolution. We find that the inferred progenitor and SN parameters are typical for an exploding Wolf-Rayet. A comparison of the wind density found at the breakout radius and the density at much larger radii, as inferred by late radio observations, suggests an enhanced mass-loss rate taking effect about 10 days prior to the SN explosion. This finding joins accumulating evidence for a possible late phase in the stellar evolution of massive stars, involving vigorous mass loss a short time before the SN explosion.

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Energy Technology Data Exchange (ETDEWEB)

Aydin, H. [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

2015-03-15

Highlights: • Lithium–zinc–tin–oxide thin films were prepared by sol gel method. • The Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a LZTO layer grown on p-Si. • The photodiodes with Li-doped ZTO interfacial layer exhibited a better device performance. - Abstract: Lithium–zinc–tin–oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium–zinc–tin–oxide (LZTO, Li–Zn–Sn–O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current–voltage, capacitance–voltage and conductance–voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO.

Geochronology and petrogenesis of the Early Cretaceous A-type granite from the Feie'shan W-Sn deposit in the eastern Guangdong Province, SE China: Implications for W-Sn mineralization and geodynamic setting

Science.gov (United States)

Liu, Peng; Mao, Jingwen; Santosh, M.; Bao, Zhian; Zeng, Xiaojian; Jia, Lihui

2018-02-01

The Feie'shan greisen-type W-Sn deposit in the eastern Guangdong Province forms part of the Southeastern Coastal Metallogenic Belt (SCMB) in South China. Here we present zircon LA-ICP-MS U-Pb geochronology of the biotite granite which shows a weighted mean 206Pb/238U age of 134.7 ± 2.0 Ma, consistent with the zircon U-Pb, biotite 40Ar-39Ar and molybdenite Re-Os ages in the previous study. The biotite granite is peraluminous and belongs to high-K calc-alkaline type. It is characterized by high SiO2, K2O, F, K2O + Na2O and FeOt/(FeOt + MgO), and low CaO, MgO, TiO2 and P2O5 contents, enrichment in Rb, Cs, Th and U, and depletion in Ba, Sr, Zr, Ti and P, with flat REE patterns and distinctly negative Eu anomalies, showing an A2-type affinity. The rocks also display extremely low Ba, Sr and Ti concentrations and high Rb/Sr, Rb/Ba and low CaO/(Na2O + K2O) ratios, indicating high degree of fractionation. Zircon grains from the granite have low Eu/Eu* and Ce4 +/Ce3 + ratios, suggesting low oxygen fugacity. The highly fractionated and reduced features imply that the Feie'shan mineralization is genetically related to the biotite granite. The εNd(t) values and zircon εHf(t) values of the biotite granite range from - 2.96 to - 1.95 and - 5.69 to 0.62, with two-stage Nd and Hf model ages (TDM2) of 1083 to 1164 Ma and 1150 to 1552 Ma, indicating that they were derived from magma hybridization between anatectic granitic and mantle-derived mafic magmas. In combination with previous studies, we propose a geodynamic model for the 145―135 Ma W-Sn mineral system and related magmatism in the southwestern domain of the SCMB. After ca. 145 Ma, the subduction orientation of the Izanagi plate changed from oblique to parallel with respect to the continental margin resulting in large-scale lithosphere extension and thinning, which led to the upwelling of asthenosphere. The ascending mantle-derived mafic magmas provided not only supplied the heat for crustal remelting but also added

Effects of the copper content on the structural and electrical properties of Cu2ZnSnSe4 bulks

Science.gov (United States)

Tsega, Moges; Dejene, F. B.; Koao, L. F.

2016-01-01

We have investigated the concept of defect in CuxZnSnSe4 (x=1.6-2.0) and Cuy(Zn0.9Sn1.1)Se4 (y= 1.6-2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb2S3 and Te. All samples were found to exhibit p-type semiconductor for CuxZnSnSe4, while n-type of behavior obtained at y= 1.8-2.0 for Cuy(Zn0.9Sn1.1)Se4 pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn4+ acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cuy(Zn0.9Sn1.1)Se4 with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×1017 cm-3 showed the highest mobility of around 58 cm2/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

Phase diagram Fe-Sn-Sr. New experimental results

International Nuclear Information System (INIS)

Nieva, N; Jimenez, M.J; Gomez, A; Corvalan Moya, C; Arias, D

2012-01-01

Zr-based alloys are widely used in nuclear industry due to their specific characteristics. The information of the phase diagrams of the ternary system Fe-Zr-Sn is scarce. In this work we investigate, in a experimental way, the central and the Fe-Sn binary adjacent regions of the Fe-Sn-Zr Gibbs triangle at the temperature of 800 o C. For the experimental work, a set of seven ternary alloys was designed, produced and examined by different complementary techniques. There were performed two types of heat treatments: one of medium and another of long duration. We present a new proposal for the 800 o C isothermal section. The boundaries of the identified phases and the fields of one, two and three phases are indicated in the diagram

Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion

Science.gov (United States)

Iguchi, Yuki; Sugiyama, Taiki; Inoue, Kazutoshi; Yanagi, Hiroshi

2018-05-01

Tin monosulfide (SnS) is an attractive material for photovoltaic cells because of its suitable band-gap energy, high absorption coefficient, and non-toxic and abundant constituent elements. The primary drawback of this material is the lack of n-type SnS. We recently demonstrated n-type SnS by doping with Cl. However, the Cl-doped n-type SnS bulk ceramics exhibited an odd behavior in which carrier-type conversion but not electron carrier concentration depended on the Cl concentration. In this study, the electron probe microanalysis (EPMA) elemental mapping of Cl-doped SnS revealed continuous homogeneous regions with a relatively low Cl concentration along with the islands of high Cl concentration in which Sn/S is far from unity. The difference between the Cl concentration in the homogeneous region (determined by EPMA) and the bulk Cl concentration (determined by wavelength-dispersive X-ray fluorescence spectroscopy) increased with the increasing Cl doping amount. The carrier concentration and the Hall coefficient clearly depended on the Cl concentration in the homogeneous region. Carrier-type conversion was observed at the Cl concentration of 0.26 at. % (in the homogeneous region).

Hybrid van der Waals SnO/MoS2 Heterojunctions for Thermal and Optical Sensing Applications

KAUST Repository

Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

2017-01-01

/oxide hybrid vdWH based on n-type molybdenum disulfide (MoS2) and p-type tin monoxide (SnO) is presented, with promising rectification, thermal-sensing, and photosensing performance. Specifically, the hybrid SnO/MoS2 vdWH shows static rectification ratio of 2

Electrical and optical properties of SnEuTe and SnSrTe films

Science.gov (United States)

Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

2010-06-01

The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

Science.gov (United States)

Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

2017-07-01

Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

Study on introduction of SN transition type FCL into distribution systems

International Nuclear Information System (INIS)

Kameda, Hideyuki; Uemura, Satoshi; Ichinose, Ataru

2013-01-01

Highlights: •We describe the arrangement of SNFCL into a present and a future distribution system. •The FCLs near loop-switches can prevent a blackout against a fault within the loop. •The FCLs enable us to enhance the flexibility of the system configuration. -- Abstract: The suitable introduction method of SN transition type superconducting fault current limiter (SNFCL) into a typical 6.6-kVdistribution system in Japan is described. A present distribution system is operated in the radial configuration and aged equipment with the isolated neutral system. An introduction of the FCLs into this system could expect to become a countermeasure against a short-circuit when introducing distributed generations in a future looped distribution system, the entire system will go into a blackout without any countermeasures, when a fault occurs within the looped system. But the introduction of the FCLs is expected to localize a blackout and to enhance the flexibility of a system configuration. In order to achieve the above-mentioned purposes of the introduction of the FCLs, the setting method of the parameters which a user should set is proposed using the transient analysis model of the SNFCL which we have ever developed

Systematic study of hyperfine fields in Rh2 Y Z type Heusler alloys with 119 Sn impurity using Moessbauer spectroscopy

International Nuclear Information System (INIS)

Ramos, S.M.M.

1985-01-01

The magnetic hyperfine fields in the Heusler alloys Rh 2 Mn .98 Ge Sn 02 , Rh 2 Mn Ge .98 Sn .02 , Rh 2 Mn Pb .98 Sn .02 and Rh 2 Mn Sn has been studied by 119 Sn Moessbauer spectroscopy at 293 K, 77 K, 4.2 K and 293 K with applied external magnetic field. The results show that when one compare the magnetic hyperfine fields systematic with the Heusler alloys X 2 Mn Z (X = Co, Ni, Cu, Pd, and Z = s p metal), this systematic is similar to the Co alloys, although can not explained by the currents models for the Heusler alloys. (author)

Effects of Rh on the thermoelectric performance of the p-type Zr0.5Hf0.5Co1-xRhxSb0.99Sn0.01 half-Heusler alloys

International Nuclear Information System (INIS)

Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

2010-01-01

We show that Rh substitution at the Co site in Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 (0≤x≤1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr 0.5 Hf 0.5 RhSb 0.99 Sn 0.01 . The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 half-Heusler materials prepared by solid state reaction at 1173 K.

Laser soldering of Sn-Ag-Cu and Sn-Zn-Bi lead-free solder pastes

Science.gov (United States)

Takahashi, Junichi; Nakahara, Sumio; Hisada, Shigeyoshi; Fujita, Takeyoshi

2004-10-01

It has reported that a waste of an electronics substrate including lead and its compound such as 63Sn-37Pb has polluted the environment with acid rain. For that environment problem the development of lead-free solder alloys has been promoted in order to find out the substitute for Sn-Pb solders in the United States, Europe, and Japan. In a present electronics industry, typical alloys have narrowed down to Sn-Ag-Cu and Sn-Zn lead-free solder. In this study, solderability of Pb-free solder that are Sn-Ag-Cu and Sn-Zn-Bi alloy was studied on soldering using YAG (yttrium aluminum garnet) laser and diode laser. Experiments were peformed in order to determine the range of soldering parameters for obtaining an appropriate wettability based on a visual inspection. Joining strength of surface mounting chip components soldered on PCB (printed circuit board) was tested on application thickness of solder paste (0.2, 0.3, and 0.4 mm). In addition, joining strength characteristics of eutectic Sn-Pb alloy and under different power density were examined. As a result, solderability of Sn-Ag-Cu (Pb-free) solder paste are equivalent to that of coventional Sn-Pb solder paste, and are superior to that of Sn-Zn-Bi solder paste in the laser soldering method.

SN 2009E

DEFF Research Database (Denmark)

Pastorello...[], A.; Pumo, M.L.; Navasardyan, H.

2012-01-01

. In this paper we investigate the properties of SN 2009E, which exploded in a relatively nearby spiral galaxy (NGC 4141) and that is probably the faintest 1987A-like supernova discovered so far. We also attempt to characterize this subgroup of core-collapse supernovae with the help of the literature and present...... observations which started about 2 months after the supernova explosion, highlight significant differences between SN 2009E and the prototypical SN 1987A. Modelling the data of SN 2009E allows us to constrain the explosion parameters and the properties of the progenitor star, and compare the inferred estimates...... 2009E ejected about 0.04 M⊙ of 56Ni, which is the smallest 56Ni mass in our sample of 1987A-like events. Modelling the observations with a radiation hydrodynamics code, we infer for SN 2009E a kinetic plus thermal energy of about 0.6 foe, an initial radius of ~7 × 1012 cm and an ejected mass of ~19 M...

Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

Science.gov (United States)

Arulanantham, A. M. S.; Valanarasu, S.; Jeyadheepan, K.; Ganesh, V.; Shkir, Mohd

2018-01-01

Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8-28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

A new class of materials with promising thermoelectric properties: MNiSn (M=Ti, Zr, Hf)

Energy Technology Data Exchange (ETDEWEB)

Hohl, H; Ramirez, A P; Kaefer, W; Fess, K; Thurner, Ch; Kloc, Ch; Bucher, E

1997-07-01

TiNiSn, ZrNiSn and HfNiSn are members of a large group of intermetallic compounds which crystallize in the cubic MgAgAs-type structure. Polycrystalline samples of these compounds have been prepared and investigated for their thermoelectric properties. With thermopowers of about {minus}200 {micro}V/K and resistivities of a few m{Omega}cm, power factors S{sup 2}/{rho} as high as 38 {micro}W/K{sup 2}cm were obtained at 700 K. These remarkably high power factors are, however, accompanied by a thermal conductivity, solid solutions Zr{sub 1{minus}x}Hf{sub x}NiSn, Zr{sub 1{minus}x}Ti{sub x}NiSn, and Hf{prime}{sub 1{minus}x}Ti{sub x}NiSn were formed. The figure of merit of Zr{sub 0.5}Hf{sub 0.5}NiSn at 700 K (ZT = 0.41) exceeds the end members ZrNiSn (ZT = 0.26) and HfNiSn (ZT = 0.22).

Preparation, deformation, and failure of functional Al-Sn and Al-Sn-Pb nanocrystalline alloys

Science.gov (United States)

Noskova, N. I.; Vil'Danova, N. F.; Filippov, Yu. I.; Churbaev, R. V.; Pereturina, I. A.; Korshunov, L. G.; Korznikov, A. V.

2006-12-01

Changes in the structure, hardness, mechanical properties, and friction coefficient of Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb (wt %) alloys subjected to severe plastic deformation by equal-channel angular pressing (with a force of 40 tonne) and by shear at a pressure of 5 GPa have been studied. The transition into the nanocrystalline state was shown to occur at different degrees of plastic deformation. The hardness exhibits nonmonotonic variations, namely, first it increases and subsequently decreases. The friction coefficient of the Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys quenched from the melt was found to be 0.33; the friction coefficients of these alloys in the submicrocrystalline state (after equal-channel angular pressing) equal 0.24, 0.32, and 0.35, respectively. The effect of disintegration into nano-sized powders was found to occur in the Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys after severe plastic deformation to ɛ = 6.4 and subsequent short-time holding.

Study of neutron-deficient Sn isotopes

International Nuclear Information System (INIS)

Auger, G.

1982-05-01

The formation of neutron deficient nuclei by heavy ion reactions is investigated. The experimental technique is presented, and the results obtained concerning Sn et In isotopes reported: first excited states of 106 Sn, high spin states in 107 Sn and 107 In; Yrast levels of 106 Sn, 107 Sn, 108 Sn; study of neutron deficient Sn and In isotopes formed by the desintegration of the compound nucleus 112 Xe. All these results are discussed [fr

Structural and thermoelectric properties of the type-I Sn clathrates Cs8Sn46−n(n=0,2) from Density Functional Theory (DFT)

KAUST Repository

Egbele, Peter O.

2018-02-08

Sn clathrates are promising phonon glass, electron crystal materials (PGEC), in which the phonon free paths are short and the electron free paths are long. We analysed the relaxed structure of Sn clathrates using four different Density Funtional Exchange-Correlation functionals. The phonon structures were investigated as a first step in order to determine the phonon contribution to the thermal conductivity. We determined the Seebeck coefficient and electrical conductivity of the clathrate compound and the thermoelectric figure of merit. A glimpse into the dynamics of the system for the evaluation of the thermoelectric and electronic properties is presented.

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Electrochemical properties of Ti-Ni-Sn materials predicted by {sup 119}Sn Mössbauer spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ladam, A., E-mail: alix.ladam@univ-montp2.fr; Aldon, L.; Lippens, P.-E.; Olivier-Fourcade, J.; Jumas, J.-C. [Université de Montpellier, Institut Charles Gerhardt, UMR 5253 CNRS (France); Cenac-Morthe, C. [CNES, Service DCT/TV/El (France)

2016-12-15

The electrochemical activity of TiNiSn, TiNi {sub 2}Sn and Ti {sub 6}Sn {sub 5} compounds considered as negative electrode materials for Li-ion batteries has been predicted from the isomer shift- Hume-Rothery electronic density correlation diagram. The ternary compounds were obtained from solid-state reactions and Ti {sub 6}Sn {sub 5} by ball milling. The {sup 119}Sn Mössbauer parameters were experimentally determined and used to evaluate the Hume-Rothery electronic density [e {sub av}]. The values of [e {sub av}] are in the region of Li-rich Li-Sn alloys for Ti {sub 6}Sn {sub 5} and outside this region for the ternary compounds, suggesting that the former compound is electrochemically active but not the two latter ones. Electrochemical tests were performed for these different materials confirming this prediction. The close values of [e {sub av}] for Ti {sub 6}Sn {sub 5} and Li-rich Li-Sn alloys indicate that the observed good capacity retention could be related to small changes in the global structures during cycling.

Theoretical study of electronic structures and spectroscopic properties of Ga 3Sn, GaSn 3, and their ions

Science.gov (United States)

Zhu, Xiaolei

2007-01-01

Ground and excited states of mixed gallium stannide tetramers (Ga 3Sn, Ga 3Sn +, Ga 3Sn -, GaSn 3, GaSn 3+, and GaSn 3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga 3Sn, Ga 3Sn +, and Ga 3Sn - are found to be the 2A 1, 3B 1, and 1A 1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn 3 and GaSn 3- is predicted to be the 2A 1 and 1A 1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn 3+ is the 1A 1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga 3Sn and GaSn 3 are computed and discussed. The anion photoelectron spectra of Ga 3Sn - and GaSn 3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn 2 atoms in the 1A 1 state of GaSn 3+ greatly increases upon electron ionization from the 2A 1 state of GaSn 3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga 3Sn and GaSn 3 are compared with those of Ga 3Si and GaSi 3.

Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts

Directory of Open Access Journals (Sweden)

Nur Hidayati

2016-03-01

Full Text Available Even though platinum is known as an active electro-catalyst for ethanol oxidation at low temperatures (< 100 oC, choosing the electrode material for ethanol electro-oxidation is a crucial issue. It is due to its property which easily poisoned by a strong adsorbed species such as CO. PtSn-based electro-catalysts have been identified as better catalysts for ethanol electro-oxidation. The third material is supposed to improved binary catalysts performance. This work presents a study of the ethanol electro-oxidation on carbon supported Pt-Sn and Pt-Sn-Ni catalysts. These catalysts were prepared by alcohol reduction. Nano-particles with diameters between 2.5-5.0 nm were obtained. The peak of (220 crystalline face centred cubic (fcc Pt phase for PtSn and PtSnNi alloys was repositioned due to the presence of Sn and/or Ni in the alloy. Furthermore, the modification of Pt with Sn and SnNi improved ethanol and CO electro-oxidation. Copyright © 2016 BCREC GROUP. All rights reserved Received: 10th November 2015; Revised: 1st February 2016; Accepted: 1st February 2016 How to Cite: Hidayati, N., Scott, K. (2016. Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts. Bulletin of Chemical Reaction Engineering & Catalysis, 11 (1: 10-20. (doi:10.9767/bcrec.11.1.394.10-20 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.11.1.394.10-20

CONSTRUÇÕES BINOMINAIS DO TIPO SN1 DE SN2

Directory of Open Access Journals (Sweden)

Karen Sampaio Braga Alonso

2017-04-01

Full Text Available Este artigo tem por objetivo investigar a flutuação de sentido quantidade-qualidade licenciada pelo uso de construtos binominais do tipo SN1 de SN2, como xícara de chá, no Português do Brasil.A pesquisa é baseada na perspectiva teórica da Linguística Funcional Centrada no Uso (BYBEE, 2010; BARLOW E KEMMER, 2000; TOMASELLO, 2003, TRAUGOTT, 2008 e busca descrever as propriedades morfossintáticas, semântico-pragmáticas e cognitivas dos usos das construções que favorecem uma leitura ora qualitativa ora quantitativa, no que se refere à relação entre SN1 e SN2.

Comparison between SGLT2 inhibitors and DPP4 inhibitors added to insulin therapy in type 2 diabetes: a systematic review with indirect comparison meta-analysis.

Science.gov (United States)

Min, Se Hee; Yoon, Jeong-Hwa; Hahn, Seokyung; Cho, Young Min

2017-01-01

Both sodium glucose cotransporter 2 (SGLT2) inhibitors and dipeptidyl peptidase-4 (DPP4) inhibitors can be used to treat patients with type 2 diabetes mellitus (T2DM) that is inadequately controlled with insulin therapy, and yet there has been no direct comparison of these two inhibitors. We searched MEDLINE, EMBASE, LILACS, the Cochrane Central Register of Controlled Trials and ClinicalTrials.gov through June 2015. Randomized controlled trials published in English that compare SGLT2 inhibitor plus insulin (SGLT2i/INS) with placebo plus insulin or DPP4 inhibitor plus insulin (DPP4i/INS) with placebo plus insulin in patients with T2DM were selected. Data on the study characteristics, efficacy and safety outcomes were extracted. We compared the efficacy and safety between SGLT2i/INS and DPP4i/INS indirectly with covariates adjustment. Risk of potential bias was assessed. Fourteen eligible randomized controlled trials comprising 6980 patients were included (five SGLT2 inhibitor studies and nine DPP4 inhibitor studies). Covariate-adjusted indirect comparison using meta-regression analyses revealed that SGLT2i/INS achieved greater reduction in HbA 1c [weighted mean difference (WMD) -0.24%, 95% confidence interval (CI) -0.43 to -0.05%], fasting plasma glucose (WMD -18.0 mg/dL, 95% CI -28.5 to -7.6 mg/dL) and body weight (WMD -2.38 kg, 95% CI -3.18 to -1.58 kg) from baseline than DPP4i/INS without increasing the risk of hypoglycaemia (relative risks 1.19, 95% CI 0.78 to 1.82). Sodium glucose cotransporter 2 inhibitors achieved better glycaemic control and greater weight reduction than DPP4 inhibitors without increasing the risk of hypoglycaemia in patients with T2DM that is inadequately controlled with insulin. There has been no direct comparison of SGLT2 inhibitors and DPP4 inhibitors in patients with T2DM inadequately controlled with insulin therapy. In this study, we performed indirect meta-analysis comparing SGLT2 inhibitors and DPP4 inhibitors added to insulin

SnO and SnO·CoO nanocomposite as high capacity anode materials for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Das, B., E-mail: bijoy822000@gmail.com; Reddy, M.V.; Chowdari, B.V.R, E-mail: phychowd@nus.edu.sg

2016-02-15

Highlights: • The preparation methods are simple, low cost and can be scaled up for large production. • SnO is cheap, non-toxic and eco-friendly. • SnO shows high reversible capacity (Theoretical reversible capacity: 875 mA h g{sup −1}). • We showed high reversible capacity and columbic efficiency for SnO and SnO based composites. • We addressed the capacity degradation by introducing secondary phase (CoO and CNT etc.) - Abstract: We prepared SnO nanoparticles (SnO–S) and SnO·CoO nanocomposites (SnO·CoO–B) as anodes for lithium ion batteries (LIBs) by chemical and ball-milling approaches, respectively. They are characterized by X-ray diffraction and TEM techniques. The Li- storage performance are evaluated by galvanostatic cycling and cyclic voltammetry. The SnO–S and SnO·CoO–B showed improved cycling performance due to their finite particle size (i.e. nano-size) and presence of secondary phase (CoO). Better cycling stability is noticed for SnO·CoO–B with the expense of their reversible capacity. Also, addition of carbon nanotubes (CNT) to SnO–S further improved the cycling performance of SnO–S. When cycled at 60 mA g{sup −1}, the first-cycle reversible capacities of 635, 590 and 460 (±10) mA h g{sup −1} are noticed for SnO–S, SnO@CNT and SnO·CoO–B, respectively. The capacity fading observed are 3.7 and 1.8 mA h g{sup −1} per cycle for SnO–S and SnO@CNT, respectively; whereas 1–1.2 mA h g{sup −1} per cycle for SnO·CoO–B. All the samples show high coulombic efficiency, 96–98% in the range of 5–50 cycles.

Ionic fragmentation following core-level photoionization of Sn(CH3)4 by soft X-rays

International Nuclear Information System (INIS)

Ueda, Kiyoshi; Shigemasa, Eiji; Sato, Yukinori; Yagishita, Akira; Hayaishi, Tatsuji

1990-01-01

Ionic fragmentation following the photoionization of Sn(CH 3 ) 4 (TMT) has been studied in the photon energy range of 60-600 eV using synchrotron radiation and time-of-flight mass spectrometry. Each of the Sn:4d, 4p, 3d and C:1s photoionization leads to a type of ionic fragmentation that is characteristic of each ionized core. The Sn:4d photoionization above 60 eV predominantly produces the doubly-charged TMT which dissociates into two singly-charged ions and some neutral fragments. The ions produced in this pathway are CH 3 + , C 2 H 3 + , C 2 H 5 + , SnCH m + and/or Sn + . The Sn:4p photoionization produces the triply-charged TMT and enhances the production of H + , CHsub(m' + ) (m' = 0-3) and Sn + significantly. The Sn:3d photoionization produces multiply-charged TMT whose charges are 3-5 and enhances the production of H + , CHsub(m' + ) (m' = 0-2) and Sn + significantly. The C:1s photoionization produces doubly-charged TMT via the KVV Auger transition and enhances the production of CH 3 + , C 2 H 3 + , SnCH m + and/or Sn + . (orig.)

Mg{sub 2}Sn heterostructures on Si(111) substrate

Energy Technology Data Exchange (ETDEWEB)

Dózsa, L., E-mail: dozsa@mfa.kfki.hu [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Galkin, N.G. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation); Pécz, B.; Osváth, Z.; Zolnai, Zs. [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Németh, A. [Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, 1525 Budapest, P.O.B. 49 (Hungary); Galkin, K.N.; Chernev, I.M. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Dotsenko, S.A. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation)

2017-05-31

Highlights: • Investigations show that the nanostructures have significant changes during the applied regular experimental investigations. • It is especially true for transmittance electron microscopy, where the investigated layers have to be thinned near to the nanostructure size. • The time order of the applied experimental investigation has a dominant effect on the experimetal results. - Abstract: Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg{sub 2}Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg{sub 2}Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg{sub 2}Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg{sub 2}Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg{sub 2}Sn layer. The measurements indicate the necessity of protective layer grown over the Mg{sub 2}Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

A novel TBP-TAF complex on RNA polymerase II-transcribed snRNA genes.

Science.gov (United States)

Zaborowska, Justyna; Taylor, Alice; Roeder, Robert G; Murphy, Shona

2012-01-01

Initiation of transcription of most human genes transcribed by RNA polymerase II (RNAP II) requires the formation of a preinitiation complex comprising TFIIA, B, D, E, F, H and RNAP II. The general transcription factor TFIID is composed of the TATA-binding protein and up to 13 TBP-associated factors. During transcription of snRNA genes, RNAP II does not appear to make the transition to long-range productive elongation, as happens during transcription of protein-coding genes. In addition, recognition of the snRNA gene-type specific 3' box RNA processing element requires initiation from an snRNA gene promoter. These characteristics may, at least in part, be driven by factors recruited to the promoter. For example, differences in the complement of TAFs might result in differential recruitment of elongation and RNA processing factors. As precedent, it already has been shown that the promoters of some protein-coding genes do not recruit all the TAFs found in TFIID. Although TAF5 has been shown to be associated with RNAP II-transcribed snRNA genes, the full complement of TAFs associated with these genes has remained unclear. Here we show, using a ChIP and siRNA-mediated approach, that the TBP/TAF complex on snRNA genes differs from that found on protein-coding genes. Interestingly, the largest TAF, TAF1, and the core TAFs, TAF10 and TAF4, are not detected on snRNA genes. We propose that this snRNA gene-specific TAF subset plays a key role in gene type-specific control of expression.

SnO2-Based Nanomaterials: Synthesis and Application in Lithium-Ion Batteries and Supercapacitors

Directory of Open Access Journals (Sweden)

Qinqin Zhao

2015-01-01

Full Text Available Tin dioxide (SnO2 is an important n-type wide-bandgap semiconductor, and SnO2-based nanostructures are presenting themselves as one of the most important classes due to their various tunable physicochemical properties. In this paper, we firstly outline the syntheses of phase-pure SnO2 hierarchical structures with different morphologies such as nanorods, nanosheets, and nanospheres, as well as their modifications by doping and compositing with other materials. Then, we reviewed the design of SnO2-based nanostructures with improved performance in the areas of lithium-ion batteries (LIBs and supercapacitors.

Effect of Solder-Joint Geometry on the Low-Cycle Fatigue Behavior of Sn- xAg-0.7Cu

Science.gov (United States)

Lee, Hwa-Teng; Huang, Kuo-Chen

2016-12-01

Low-cycle fatigue tests of Sn-Ag-Cu (SAC) Pb-free solder joints under fixed displacement were performed to evaluate the influence of Ag content (0-3 wt.%) and solder-joint geometry (barrel and hourglass types) on solder-joint fatigue behavior and reliability. The solder joints were composed of fine particles of Ag3Sn and Cu6Sn5, which aggregated as an eutectic constituent at grain boundaries of the primary β-Sn phase and formed a dense network structure. A decrease in the Ag content resulted in coarsening of the β-Sn and eutectic phases, which, in turn, decreased the strength of the joint and caused earlier failure. Solder joints in the hourglass form exhibited better fatigue performance with longer life than barrel-type joints. The sharp contact angle formed between the solder and the Cu substrate by the barrel-type joints concentrated stress, which compromised fatigue reliability. The addition of Ag to the solder, however, enhanced fatigue performance because of strengthening caused by Ag3Sn formation. The cracks of the barrel-type SAC solder joints originated mostly at the contact corner and propagated along the interfacial layer between the interfacial intermetallic compound (IMC) and solder matrix. Hourglass-type solder joints, however, demonstrated both crack initiation and propagation in the solder matrix (solder mode). The addition of 1.5-2.0 wt.% Ag to SAC solder appears to enhance the fatigue performance of solder joints while maintaining sufficient strength.

Sn powder as reducing agents and SnO2 precursors for the synthesis of SnO2-reduced graphene oxide hybrid nanoparticles.

Science.gov (United States)

Chen, Mingxi; Zhang, Congcong; Li, Lingzhi; Liu, Yu; Li, Xichuan; Xu, Xiaoyang; Xia, Fengling; Wang, Wei; Gao, Jianping

2013-12-26

A facile approach to prepare SnO2/rGO (reduced graphene oxide) hybrid nanoparticles by a direct redox reaction between graphene oxide (GO) and tin powder was developed. Since no acid was used, it is an environmentally friendly green method. The SnO2/rGO hybrid nanoparticles were characterized by ultraviolet-visible spectroscopy, Raman spectroscopy, thermogravimetric analysis, X-ray diffraction analysis, and X-ray photoelectron spectroscopy. The microstructure of the SnO2/rGO was observed with scanning electron microscopy and transmission electron microscopy. The tin powder efficiently reduced GO to rGO, and the Sn was transformed to SnO2 nanoparticles (∼45 nm) that were evenly distributed on the rGO sheets. The SnO2/rGO hybrid nanoparticles were then coated on an interdigital electrode to fabricate a humidity sensor, which have an especially good linear impedance response from 11% to 85% relative humidity.

Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

Science.gov (United States)

Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

2016-12-01

Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

Efecto de la naturaleza del precursor sobre las caracteristicas de las nanoparticulas de SnO2 sintetizadas Effect of the precursor's nature on characteristics of synthesized SnO2 nanoparticles

Directory of Open Access Journals (Sweden)

Carlos E. Ararat-Ibarguen

2007-01-01

Full Text Available Tin oxide (SnO2 is widely used in industry as raw material for electronic devices, plating of different types of materials, for dyes and pigments, for electroplating, heterogeneous catalysis, etc. In this work SnO2 was obtained by a controlled precipitation method with special attention to the effects the tin precursor has on the microstructure of the final product. The most appropriate pH for obtaining SnO2 with the rutile structure as the main phase is 6.25 for SnCl2 and 6.40 for SnSO4. After heat treatment at 600 °C, particles of nanometric order (~10 - 30 nm approx were obtained. The characterization of the solid phase was made by X-ray diffraction (XRD, thermal analysis (DTA/TG, transmission electron microscopy (TEM and Fourier transformed infrared spectroscopy (FTIR.

Effects of Ni{sub 3}Sn{sub 4} and (Cu,Ni){sub 6}Sn{sub 5} intermetallic layers on cross-interaction between Pd and Ni in solder joints

Energy Technology Data Exchange (ETDEWEB)

Baek, Yong-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Division of Advanced Circuit Interconnect, Samsung Electro-Mechanics Co., Ltd., Suwon 443-743 (Korea, Republic of); Chung, Bo-Mook [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Department of Research and Development, KPM TECH, Ansan 425-090 (Korea, Republic of); Choi, Young-Sik [Division of Advanced Circuit Interconnect, Samsung Electro-Mechanics Co., Ltd., Suwon 443-743 (Korea, Republic of); Choi, Jaeho [Department of Advanced Metal and Materials Engineering, Gangneung-Wonju National University, Gangneung 210-702 (Korea, Republic of); Huh, Joo-Youl, E-mail: jyhuh@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2013-12-05

Highlights: •Ni{sub 3}Sn{sub 4} acts as a source of Ni atoms, leading to a strong cross-interaction with Pd. •(Cu,Ni){sub 6}Sn{sub 5} is an effective Ni diffusion barrier, inhibiting Pd resettlement. •Dissolution kinetics of (Pd,Ni)Sn{sub 4} was interpreted based on the Sn–Ni–Pd isotherm. •Cu addition to solder alleviates the (Pd,Ni)Sn{sub 4}-related risk of reliability deterioration. -- Abstract: We examined the effects of layers of intermetallic compound (IMC) Ni{sub 3}Sn{sub 4} and (Cu,Ni){sub 6}Sn{sub 5} formed at the solder/Ni interface, on the cross-interactions between Pd and Ni during solid-state aging and reflow soldering. Two types of diffusion couples, Pd/Sn/Ni and Pd/Sn–Cu/Ni, were aged at 150 °C to study the solid-state interactions. In contrast to the Pd/Sn/Ni couples in which a Ni{sub 3}Sn{sub 4} layer formed at the Ni interface, the Pd/Sn–Cu/Ni couple where a (Cu,Ni){sub 6}Sn{sub 5} layer formed at the Ni interface exhibited no significant interaction between Pd and Ni. The (Cu,Ni){sub 6}Sn{sub 5} layer acted as an effective barrier against Ni diffusion and thus inhibited the resettlement of (Pd,Ni)Sn{sub 4} onto the Ni interface. For the interaction during reflow, Sn–3.5Ag and Sn–3.0Ag–0.5Cu solder balls were isothermally reflowed on an electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) surface finish at 250 °C, and the dissolution kinetics of the (Pd,Ni)Sn{sub 4} particles converted from the 0.2-μm-thick Pd-finish layer were examined. The spalled (Pd,Ni)Sn{sub 4} particles very quickly dissolved into the molten solder when the IMC layer formed on the Ni substrate was (Cu,Ni){sub 6}Sn{sub 5} rather than Ni{sub 3}Sn{sub 4}. The dependence of the dissolution kinetics of the spalled (Pd,Ni)Sn{sub 4} particles on the IMC layers was rationalized on the basis of a Sn–Ni–Pd isotherm at 250 °C. The present study suggests that the formation of a dense (Cu,Ni){sub 6}Sn{sub 5} layer at the solder/Ni interface can effectively

Multiepoch Spectropolarimetry of SN 2011fe

International Nuclear Information System (INIS)

Milne, Peter A.; Williams, G. Grant; Smith, Paul S.; Smith, Nathan; Jannuzi, Buell T.; Green, E. M.; Porter, Amber; Leising, Mark D.

2017-01-01

We present multiple spectropolarimetric observations of the nearby Type Ia supernova (SN) 2011fe in M101, obtained before, during, and after the time of maximum apparent visual brightness. The excellent time coverage of our spectropolarimetry has allowed better monitoring of the evolution of polarization features than is typical, which has allowed us new insight into the nature of normal SNe Ia. SN 2011fe exhibits time-dependent polarization in both the continuum and strong absorption lines. At early epochs, red wavelengths exhibit a degree of continuum polarization of up to 0.4%, likely indicative of a mild asymmetry in the electron-scattering photosphere. This behavior is more common in subluminous SNe Ia than in normal events, such as SN 2011fe. The degree of polarization across a collection of absorption lines varies dramatically from epoch to epoch. During the earliest epoch, a λ 4600–5000 Å complex of absorption lines shows enhanced polarization at a different position angle than the continuum. We explore the origin of these features, presenting a few possible interpretations, without arriving at a single favored ion. During two epochs near maximum, the dominant polarization feature is associated with the Si ii λ 6355 Å absorption line. This is common for SNe Ia, but for SN 2011fe the polarization of this feature increases after maximum light, whereas for other SNe Ia, that polarization feature was strongest before maximum light.

Multiepoch Spectropolarimetry of SN 2011fe

Energy Technology Data Exchange (ETDEWEB)

Milne, Peter A.; Williams, G. Grant; Smith, Paul S.; Smith, Nathan; Jannuzi, Buell T.; Green, E. M. [University of Arizona, Steward Observatory, 933 N. Cherry Avenue, Tucson, AZ 85721 (United States); Porter, Amber; Leising, Mark D. [118 Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States)

2017-01-20

We present multiple spectropolarimetric observations of the nearby Type Ia supernova (SN) 2011fe in M101, obtained before, during, and after the time of maximum apparent visual brightness. The excellent time coverage of our spectropolarimetry has allowed better monitoring of the evolution of polarization features than is typical, which has allowed us new insight into the nature of normal SNe Ia. SN 2011fe exhibits time-dependent polarization in both the continuum and strong absorption lines. At early epochs, red wavelengths exhibit a degree of continuum polarization of up to 0.4%, likely indicative of a mild asymmetry in the electron-scattering photosphere. This behavior is more common in subluminous SNe Ia than in normal events, such as SN 2011fe. The degree of polarization across a collection of absorption lines varies dramatically from epoch to epoch. During the earliest epoch, a λ 4600–5000 Å complex of absorption lines shows enhanced polarization at a different position angle than the continuum. We explore the origin of these features, presenting a few possible interpretations, without arriving at a single favored ion. During two epochs near maximum, the dominant polarization feature is associated with the Si ii λ 6355 Å absorption line. This is common for SNe Ia, but for SN 2011fe the polarization of this feature increases after maximum light, whereas for other SNe Ia, that polarization feature was strongest before maximum light.

The electrical properties of n-ZnO/p-SnO heterojunction diodes

Science.gov (United States)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

The 7SK snRNP associates with the little elongation complex to promote snRNA gene expression.

Science.gov (United States)

Egloff, Sylvain; Vitali, Patrice; Tellier, Michael; Raffel, Raoul; Murphy, Shona; Kiss, Tamás

2017-04-03

The 7SK small nuclear RNP (snRNP), composed of the 7SK small nuclear RNA (snRNA), MePCE, and Larp7, regulates the mRNA elongation capacity of RNA polymerase II (RNAPII) through controlling the nuclear activity of positive transcription elongation factor b (P-TEFb). Here, we demonstrate that the human 7SK snRNP also functions as a canonical transcription factor that, in collaboration with the little elongation complex (LEC) comprising ELL, Ice1, Ice2, and ZC3H8, promotes transcription of RNAPII-specific spliceosomal snRNA and small nucleolar RNA (snoRNA) genes. The 7SK snRNA specifically associates with a fraction of RNAPII hyperphosphorylated at Ser5 and Ser7, which is a hallmark of RNAPII engaged in snRNA synthesis. Chromatin immunoprecipitation (ChIP) and chromatin isolation by RNA purification (ChIRP) experiments revealed enrichments for all components of the 7SK snRNP on RNAPII-specific sn/snoRNA genes. Depletion of 7SK snRNA or Larp7 disrupts LEC integrity, inhibits RNAPII recruitment to RNAPII-specific sn/snoRNA genes, and reduces nascent snRNA and snoRNA synthesis. Thus, through controlling both mRNA elongation and sn/snoRNA synthesis, the 7SK snRNP is a key regulator of nuclear RNA production by RNAPII. © 2017 The Authors.

Ternary semiconductors NiZrSn and CoZrBi with half-Heusler structure: A first-principles study

Science.gov (United States)

Fiedler, Gregor; Kratzer, Peter

2016-08-01

The ternary semiconductors NiZrSn and CoZrBi with C 1b crystal structure are introduced by calculating their basic structural, electronic, and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (Eg=0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials A B C , the intrinsic point defects introduced by species A (Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Nii) as well as the VNiNii complex introduce defect states in the band gap, whereas the Ni vacancy (VNi) only reduces the size of the band gap. While Nii is electrically active and may act as a donor, the other two types of defects may compensate extrinsic doping. In CoZrBi, only the VCoCoi complex introduces a defect state in the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials, both in the p -type and the n -type regimes, is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 μ V /K when p doped, whereas NiZrSn possesses its maximum thermopower in the n -type regime. The reported difficulties in achieving p -type doping in NiZrSn could be rationalized by the unintended formation of Nii2 + in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T =600 K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni2ZrSn phase.

SnRK1 activates autophagy via the TOR signaling pathway in Arabidopsis thaliana.

Science.gov (United States)

Soto-Burgos, Junmarie; Bassham, Diane C

2017-01-01

Autophagy is a degradation process in which cells break down and recycle their cytoplasmic contents when subjected to environmental stress or during cellular remodeling. The Arabidopsis thaliana SnRK1 complex is a protein kinase that senses changes in energy levels and triggers downstream responses to enable survival. Its mammalian ortholog, AMPK, and yeast ortholog, Snf-1, activate autophagy in response to low energy conditions. We therefore hypothesized that SnRK1 may play a role in the regulation of autophagy in response to nutrient or energy deficiency in Arabidopsis. To test this hypothesis, we determined the effect of overexpression or knockout of the SnRK1 catalytic subunit KIN10 on autophagy activation by abiotic stresses, including nutrient deficiency, salt, osmotic, oxidative, and ER stress. While wild-type plants had low basal autophagy activity in control conditions, KIN10 overexpression lines had increased autophagy under these conditions, indicating activation of autophagy by SnRK1. A kin10 mutant had a basal level of autophagy under control conditions similar to wild-type plants, but activation of autophagy by most abiotic stresses was blocked, indicating that SnRK1 is required for autophagy induction by a wide variety of stress conditions. In mammals, TOR is a negative regulator of autophagy, and AMPK acts to activate autophagy both upstream of TOR, by inhibiting its activity, and in a parallel pathway. Inhibition of Arabidopsis TOR leads to activation of autophagy; inhibition of SnRK1 did not block this activation. Furthermore, an increase in SnRK1 activity was unable to induce autophagy when TOR was also activated. These results demonstrate that SnRK1 acts upstream of TOR in the activation of autophagy in Arabidopsis.

Reducing Staphylococcus aureus growth on Ti alloy nanostructured surfaces through the addition of Sn.

Science.gov (United States)

Verissimo, Nathália C; Geilich, Benjamin M; Oliveira, Haroldo G; Caram, Rubens; Webster, Thomas J

2015-12-01

β-type Ti alloys containing Nb are exciting materials for numerous orthopedic and dental applications due to their exceptional mechanical properties. To improve their cytocompatibility properties (such as increasing bone growth and decreasing infection), the surfaces of such materials can be optimized by adding elements and/or nanotexturing through anodization. Because of the increasing prevalence of orthopedic implant infections, the objective of this in vitro study was to add Sn and create unique nanoscale surface features on β-type Ti alloys. Nanotubes and nanofeatures on Ti-35Nb and Ti-35Nb-4Sn alloys were created by anodization in a HF-based electrolyte and then heat treated in a furnace to promote amorphous structures and phases such as anatase, a mixture of anatase-rutile, and rutile. Samples were characterized by SEM, which indicated different morphologies dependent on the oxide content and method of modification. XPS experiments identified the oxide content which resulted in a phase transformation in the oxide layer formed onto Ti-35Nb and Ti-35Nb-4Sn alloys. Most importantly, regardless of the resulting nanostructures (nanotubes or nanofeatures) and crystalline phase, this study showed for the first time that adding Sn to β-type Ti alloys strongly decreased the adhesion of Staphylococcus aureus (S. aureus; a bacteria which commonly infects orthopedic implants leading to their failure). Thus, this study demonstrated that β-type Ti alloys with Nb and Sn have great promise to improve numerous orthopedic applications where infection may be a concern. © 2015 Wiley Periodicals, Inc.

Effect of Sn addition on the microstructure and superelasticity in Ti-Nb-Mo-Sn alloys.

Science.gov (United States)

Zhang, D C; Yang, S; Wei, M; Mao, Y F; Tan, C G; Lin, J G

2012-09-01

Ti-7.5Nb-4Mo-xSn (x=0-4at%) alloys were developed as the biomedical materials. The effect of the Sn content on the microstructure and superelasticity of the alloys was investigated. It is found that Sn is a strong stabilizer of the β phase, which is effective in suppressing the formation of α″ and ω phases in the alloys. Moreover, the Sn addition has a significant impact on the mechanical properties of the alloys. With the increase of Sn addition, the yield stress of the alloys increase, but their elastic modulus, the fracture strength and the ductility decrease, and the deformation mode of the alloys changes from (322) twining to α″ transformation and then to slip. The Ti-7.5Nb-4Mo-1Sn and Ti-7.5Nb-4Mo-3Sn alloys exhibit a good superelasticity with a high σ(SIM) due to the relatively high athermal ω phases containing or the solution hardening at room temperature. Under the maximum strain of 5%, Ti-7.5Nb-4Mo-3Sn (at%) alloy exhibits higher super elastic stability than that of Ti-7.5Nb-4Mo-1Sn alloy. Copyright © 2012 Elsevier Ltd. All rights reserved.

SnO2-Based Nanomaterials: Synthesis and Application in Lithium-Ion Batteries and Supercapacitors

OpenAIRE

Zhao, Qinqin; Ma, Lisha; Zhang, Qiang; Wang, Chenggang; Xu, Xijin

2015-01-01

Tin dioxide (SnO2) is an important n-type wide-bandgap semiconductor, and SnO2-based nanostructures are presenting themselves as one of the most important classes due to their various tunable physicochemical properties. In this paper, we firstly outline the syntheses of phase-pure SnO2 hierarchical structures with different morphologies such as nanorods, nanosheets, and nanospheres, as well as their modifications by doping and compositing with other materials. Then, we reviewed the design of ...

Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

Science.gov (United States)

Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

2017-09-01

An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

Preparation of SnSe thin films by encapsulated selenization

International Nuclear Information System (INIS)

Sabar D. Hutagalung; Samsudi Sakrani; Yussof Wahab

1994-01-01

Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system

Ab initio study of the compound-energy modeling of multisublattice structures: The (hP6) Ni2In-type intermetallics of the Ni–In–Sn system

International Nuclear Information System (INIS)

Ramos de Debiaggi, S.; González Lemus, N.V.; Deluque Toro, C.; Fernández Guillermet, A.

2015-01-01

Highlights: • A DFT study of the compounds involved in CALPHAD modeling of the Ni–In–Sn (hP6) phase. • Several three-sublattice compounds of Ni, In, Sn and vacancies are studied ab initio. • Structural, cohesive and thermodynamic properties and the electronic DOS are reported. • Trends in calculated properties are correlated with changes in electronic structure. • A picture of the chemical bonding trends for these s-p/d type compounds is discussed. - Abstract: The thermodynamic modeling of non-stoichiometric, multisublattice intermetallic phases using the Compound-Energy Formalism (CEF) involves the determination of parameters representing the Gibbs energy (G m ) of binary compounds, the so-called “end-member compounds” (EMCs), which are often metastable or hypothetical. In current CALPHAD (i.e., “Calculation of Phase Diagrams”) work, these quantities are treated as free parameters to be determined by searching for the best fit to the available information in the optimization procedure. The general purpose of this paper is to propose a theoretical approach to the study of the EMCs which makes use of density-functional-theory (DFT) ab initio calculations. The present method is applied to the EMCs involved in the CEF modeling of the non-stoichiometric (hP6) Ni 2 In-structure type phase of the Ni–In and Ni–In–Sn systems using the three-sublattice models (Ni) 1 (Ni,Va) 1 (In,Ni) 1 and (Ni,Va) 1 (Ni,Va) 1 (In,Ni,Sn) 1 , respectively. By means of systematic ab initio projected augmented waves (PAW) calculations using the VASP code we study the EMCs involved in the CEF formulations of the G m for this phase in the binary and the ternary systems. Specifically, we study the twelve EMCs corresponding to the following sublattice occupations: (Ni) 1 (Ni) 1 (In) 1 , which is usually described as Ni:Ni:In (i.e., a compound with formula “Ni 2 In”), Ni:Ni:Ni (i.e., “Ni 3 ”), Ni:Ni:Sn (“Ni 2 Sn”), Ni:Va:In (i.e., “NiIn”), Ni:Va:Ni (i

Rational design of Sn/SnO{sub 2}/porous carbon nanocomposites as anode materials for sodium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaojia [Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Li, Xifei, E-mail: xfli2011@hotmail.com [Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Center for Advanced Energy Materials and Devices, Xi’an University of Technology, Xi’an 710048 (China); Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Collaborative Innovation Center of Chemical Science and Engineering, College of Chemistry, Nankai University, Tianjin 300071 (China); Fan, Linlin; Yu, Zhuxin; Yan, Bo; Xiong, Dongbin; Song, Xiaosheng; Li, Shiyu [Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Adair, Keegan R. [Nanomaterials and Energy Lab., Department of Mechanical and Materials Engineering, Western University, London, Ontario N6A 5B9 (Canada); Li, Dejun, E-mail: dejunli@mail.tjnu.edu.cn [Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Sun, Xueliang, E-mail: xsun9@uwo.ca [Nanomaterials and Energy Lab., Department of Mechanical and Materials Engineering, Western University, London, Ontario N6A 5B9 (Canada); Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China)

2017-08-01

Highlights: • Sn/SnO{sub 2}/porous carbon nanocomposites are rationally designed via a facile strategy. • The porous carbon mitigates the volume change and poor conductivity of Sn/SnO{sub 2}. • The nanocomposites exhibit the enhanced sodium storage performance. - Abstract: Sodium-ion batteries (SIBs) have successfully attracted considerable attention for application in energy storage, and have been proposed as an alternative to lithium ion batteries (LIBs) due to the abundance of sodium resources and low price. Sn has been deemed as a promising anode material in SIBs which holds high theoretical specific capacity of 845 mAh g{sup −1}. In this work we design nanocomposite materials consisting of porous carbon (PC) with SnO{sub 2} and Sn (Sn/SnO{sub 2}/PC) via a facile reflux method. Served as an anode material for SIBs, the Sn/SnO{sub 2}/PC nanocomposite delivers the primary discharge and charge capacities of 1148.1 and 303.0 mAh g{sup −1}, respectively. Meanwhile, it can preserve the discharge capacity approximately of 265.4 mAh g{sup −1} after 50 cycles, which is much higher than those of SnO{sub 2}/PC (138.5 mAh g{sup −1}) and PC (92.2 mAh g{sup −1}). Furthermore, the Sn/SnO{sub 2}/PC nanocomposite possesses better cycling stability with 77.8% capacity retention compared to that of SnO{sub 2}/PC (61.88%) over 50 cycles. Obviously, the Sn/SnO{sub 2}/PC composite with excellent electrochemical performance shows the great possibility of application in SIBs.

Gas Sensing Properties of ZnO-SnO2 Nanostructures.

Science.gov (United States)

Chen, Weigen; Li, Qianzhu; Xu, Lingna; Zeng, Wen

2015-02-01

One-dimensional (1D) semiconductor metal oxide nanostructures have attracted increasing attention in electrochemistry, optics, magnetic, and gas sensing fields for the good properties. N-type low dimensional semiconducting oxides such as SnO2 and ZnO have been known for the detection of inflammable or toxic gases. In this paper, we fabricated the ZnO-SnO2 and SnO2 nanoparticles by hydrothermal synthesis. Microstructure characterization was performed using X-ray diffraction (XRD) and surface morphologies for both the pristine and doped samples were observed using field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Then we made thin film gas sensor to study the gas sensing properties of ZnO-SnO2 and SnO2 gas sensor to H2 and CO. A systematic comparison study reveals an enhanced gas sensing performance for the sensor made of SnO2 and ZnO toward H2 and CO over that of the commonly applied undecorated SnO2 nanoparticles. The improved gas sensing properties are attributed to the size of grains and pronounced electron transfer between the compound nanostructures and the absorbed oxygen species as well as to the heterojunctions of the ZnO nanoparticles to the SnO2 nanoparticles, which provide additional reaction rooms. The results represent an advance of compound nanostructures in further enhancing the functionality of gas sensors, and this facile method could be applicable to many sensing materials, offering a new avenue and direction to detect gases of interest based on composite tin oxide nanoparticles.

Study of interfacial reactions in Sn-3.5Ag-3.0Bi and Sn-8.0Zn-3.0Bi sandwich structure solder joint with Ni(P)/Cu metallization on Cu substrate

International Nuclear Information System (INIS)

Sun, Peng; Andersson, Cristina; Wei, Xicheng; Cheng, Zhaonian; Shangguan, Dongkai; Liu, Johan

2007-01-01

In this paper, the coupling effect in Sn-3.5Ag-3.0Bi and Sn-8.0Zn-3.0Bi solder joint with sandwich structure by long time reflow soldering was studied. It was found that the interfacial compound at the Cu substrate was binary Cu-Sn compound in Sn-Ag-Bi solder joint and Cu 5 Zn 8 phase in Sn-Zn-Bi solder joint. The thickness of the Cu-Zn compound layer formed at the Cu substrate was greater than or equal to that of Cu-Sn compound layer, although the reflow soldering temperature of Sn-Zn-Bi (240 o C) was lower than that of Sn-Ag-Bi (250 o C). The stable Cu-Zn compound was the absolute preferential phase in the interfacial layer between Sn-Zn-Bi and the Cu substrate. The ternary (Cu, Ni) 6 Sn 5 compound was formed at the Sn-Ag-Bi/Ni(P)-Cu metallization interface, and a complex alloy Sn-Ni-Cu-Zn was formed at the Sn-Zn-Bi/Ni(P)-Cu metallization interface. It was noted that Cu atoms could diffuse from the Cu substrate through the solder matrix to the Ni(P)-Cu metallization within 1 min reflow soldering time for both solder systems, indicating that just 30 s was long enough for Cu to go through 250 μm diffusion length in the Sn-Ag-Bi solder joint at 250 o C. The coupling effect between Ni(P)/Cu metallization and Cu substrate was confirmed as the type of IMCs at Ni(P) layer had been changed from Ni-Sn system to Cu-Sn system apparently by the diffusion effect of Cu atoms. The (Cu, Ni) 6 Sn 5 layer at the Ni(P)/Cu metallization grew significantly and its thickness was even greater than that of the Cu-Sn compound on the opposite side, however the growth of the complex alloy including Sn, Ni, Cu and Zn on the Ni(P)/Cu metallization was suppressed

Sn2+—Stabilization in MASnI3 perovskites by superhalide incorporation

Science.gov (United States)

Xiang, Junxiang; Wang, Kan; Xiang, Bin; Cui, Xudong

2018-03-01

Sn-based hybrid halide perovskites are a potential solution to replace Pb and thereby reduce Pb toxicity in MAPbI3 perovskite-based solar cells. However, the instability of Sn2+ in air atmosphere causes a poor reproducibility of MASnI3, hindering steps towards this goal. In this paper, we propose a new type of organic metal-superhalide perovskite of MASnI2BH4 and MASnI2AlH4. Through first-principles calculations, our results reveal that the incorporation of BH4 and AlH4 superhalides can realize an impressive enhancement of oxidation resistance of Sn2+ in MASnI3 perovskites because of the large electron transfer between Sn2+ and [BH4]-/[AlH4]-. Meanwhile, the high carrier mobility is preserved in these superhalide perovskites and only a slight decrease is observed in the optical absorption strength. Our studies provide a new path to attain highly stable performance and reproducibility of Sn-based perovskite solar cells.

Hierarchical Graphene-Encapsulated Hollow SnO2@SnS2 Nanostructures with Enhanced Lithium Storage Capability.

Science.gov (United States)

Xu, Wangwang; Xie, Zhiqiang; Cui, Xiaodan; Zhao, Kangning; Zhang, Lei; Dietrich, Grant; Dooley, Kerry M; Wang, Ying

2015-10-14

Complex hierarchical structures have received tremendous attention due to their superior properties over their constitute components. In this study, hierarchical graphene-encapsulated hollow SnO2@SnS2 nanostructures are successfully prepared by in situ sulfuration on the backbones of hollow SnO2 spheres via a simple hydrothermal method followed by a solvothermal surface modification. The as-prepared hierarchical SnO2@SnS2@rGO nanocomposite can be used as anode material in lithium ion batteries, exhibiting excellent cyclability with a capacity of 583 mAh/g after 100 electrochemical cycles at a specific current of 200 mA/g. This material shows a very low capacity fading of only 0.273% per cycle from the second to the 100th cycle, lower than the capacity degradation of bare SnO2 hollow spheres (0.830%) and single SnS2 nanosheets (0.393%). Even after being cycled at a range of specific currents varied from 100 mA/g to 2000 mA/g, hierarchical SnO2@SnS2@rGO nanocomposites maintain a reversible capacity of 664 mAh/g, which is much higher than single SnS2 nanosheets (374 mAh/g) and bare SnO2 hollow spheres (177 mAh/g). Such significantly improved electrochemical performance can be attributed to the unique hierarchical hollow structure, which not only effectively alleviates the stress resulting from the lithiation/delithiation process and maintaining structural stability during cycling but also reduces aggregation and facilitates ion transport. This work thus demonstrates the great potential of hierarchical SnO2@SnS2@rGO nanocomposites for applications as a high-performance anode material in next-generation lithium ion battery technology.

In situ 119Sn Moessbauer spectroscopy used to study lithium insertion in c-Mg2Sn

International Nuclear Information System (INIS)

Aldon, L.; Ionica, C. M.; Lippens, P. E.; Larcher, D.; Tarascon, J.-M.; Olivier-Fourcade, J.; Jumas, J.-C.

2006-01-01

The electrochemical reactions of Li with c-Mg 2 Sn have been investigated by in situ Moessbauer spectroscopy of 119 Sn and X-ray diffraction. The lithiation transforms initially c-Mg 2 Sn part into Li x Mg 2 Sn alloy (x 2 MgSn ternary alloy. In situ Moessbauer spectroscopy provides valuable information on local environment of tin and swelling behavior and cracking of the particles during discharge and charge processes.

Vibrational properties of stannite and kesterite type compounds: Raman scattering analysis of Cu2(Fe,Zn)SnS4

International Nuclear Information System (INIS)

Fontané, X.; Izquierdo-Roca, V.; Saucedo, E.; Schorr, S.; Yukhymchuk, V.O.; Valakh, M.Ya.; Pérez-Rodríguez, A.; Morante, J.R.

2012-01-01

Highlights: ► Analysis of main and weaker Raman peaks from Cu 2 FeZnS 4 and Cu 2 ZnSnS 4 compounds. ► Identification of a cation disorder induced Raman peak in Cu 2 ZnSnS 4 . ► Analysis of spectral features of main Raman peaks from Cu 2 (Fe,Zn)SnS 4 . - Abstract: This work reports the analysis of the vibrational properties of stannite–kesterite Cu 2 (Fe,Zn)SnS 4 compounds that has been performed by Raman scattering measurements. The detailed analysis of the experimental spectra has allowed determining the frequency and symmetry assignment of the main and weaker peaks from both stannite Cu 2 FeSnS 4 (CFTS) and kesterite Cu 2 ZnSnS 4 (CZTS) phases. The measurements performed in the kesterite CZTS samples have also revealed the presence of local inhomogeneities that are characterised by an additional peak in the spectra at about 331 cm −1 . This peak has been related to the presence in these local regions of a high degree of disorder in the cation sublattice, in agreement with previous neutron diffraction analysis in similar samples. Finally, the spectra from the solid solution alloys show a one-mode behaviour of the main A/A 1 peak with the chemical composition.

Improved activity of SnO for the photocatalytic oxygen evolution

Directory of Open Access Journals (Sweden)

S. Kaizra

2018-01-01

Full Text Available SnO prepared by soft chemistry exhibits a black color and semiconducting properties. The X-ray diffraction indicates a tetragonal symmetry (SG: P4/nmm with nano crystallites of an average size of 85 nm. The forbidden band, determined from the diffuse reflectance is found to be 1.46 eV. The electrical conductivity occurs by polaron hopping and follows an Arrhenius type law with activation energy of 0.21 eV, the change in the slope at 526 K is attributed to the oxidation to SnO2. The photo-electrochemical study shows n type conduction with a flat band potential of −0.45 V, close to the photocurrent onset potential (−0.40 V. The electrochemical impedance spectroscopy shows the bulk contribution of SnO (Rb = 1.7 kΩ cm2 and decreases down to 1.89 kΩ cm2 under illumination. The photocatalytic properties have been evaluated for the first time for to the oxygen evolution. The valence band, deriving from Sn2+: 5p orbital with a potential (−0.80 VSCE/5.55 eV, is suitably positioned with respect to O2/H2O level (∼0.6 VSCE, leading to water oxidation under visible light. The best performance occurs at pH ∼ 7 with an oxygen liberation rate of 23 µmol mL h−1 (mg catalyst−1 and a quantum efficiency of 1.2%. An improvement of ∼13% is observed on the system SnO/clay.

The Fast Evolution of SN 2010bh Associated with XRF 100316D

Science.gov (United States)

Olivares E., F.; Greiner, J.; Schady, P.; Rau, A.; Klose, S.; Kruhler, T.; Afonso, P. M. J.; Updike, A. C.; Nardini, M.; Filgas, R.;

Structural stability of ternary C22–Zr6X2Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr6Sn2T′ (T′=Fe, Co, Ni, Cu) compounds

International Nuclear Information System (INIS)

Colinet, Catherine; Crivello, Jean-Claude; Tedenac, Jean-Claude

2013-01-01

The crystal and electronic structures, and the thermodynamic properties of Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe 2 P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr 6 Sb 2 Co compound. Display Omitted - Highlights: • Structural stability of Zr 6 X 2 T′ compounds (X: p element, T′: late transition metal) in the Fe 2 P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

Stable and metastable equilibria in PbSe + SnI2=SnSe + PbI2

International Nuclear Information System (INIS)

Odin, I.N.; Grin'ko, V.V.; Kozlovskij, V.F.; Demidova, E.D.

2003-01-01

T-x-y phase diagrams of the PbSe + SnI 2 =SnSe + PbI 2 mutual system (stable states) are plotted for the first time. It is shown that melt, solid solutions on the base of components of the mutual system and phase on the base of Sn 2 SeI 4 take part in phase equilibria. Transformations in the PbSe + SnI 2 =SnSe + PbI 2 mutual system leading to crystallization of metastable polytype modifications of lead iodides and metastable ternary compound forming in PbSe-PbI 2 system are investigated for the first time [ru

Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

OpenAIRE

Whittles, TJ; Burton, LA; Skelton, JM; Walsh, A; Veal, TD; Dhanak, VR

2016-01-01

Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying separate phases, which are also known to form during Cu2ZnSnS4 depositions. We present X-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calculations from density functional theory (DFT). Differences in the XPS spectra of the three phases, including...

Comparative study of SnS recrystallization in molten CdI{sub 2}, SnCl{sub 2}and KI

Energy Technology Data Exchange (ETDEWEB)

Timmo, Kristi; Kauk-Kuusik, Marit; Pilvet, Maris; Mikli, Valdek; Kaerber, Erki; Raadik, Taavi; Leinemann, Inga; Altosaar, Mare; Raudoja, Jaan [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia)

2016-01-15

In the present study, the recrystallization of polycrystalline SnS in different molten salts CdI{sub 2}, SnCl{sub 2} and KI as flux materials are presented. The recrystallization and growth of polycrystalline material in molten salts produces unique SnS monograin powders usable in monograin layer solar cells. XRD and Raman analysis revealed that single phase SnS powder can be obtained in KI at 740 C and in SnCl{sub 2} at 500 C. Long time heating of SnS in molten CdI{sub 2} was accompanied by chemical interaction between SnS and CdI{sub 2} that resulted in a mixture of CdS and Sn{sub 2}S{sub 3} crystals. SEM images showed that morphology of crystals can be controlled by the nature of the flux materials: needle-like Sn{sub 2}S{sub 3} together with round edged crystals of CdS in CdI{sub 2}, flat crystals of SnS with smooth surfaces in SnCl{sub 2} and well-formed SnS crystals with rounded edges in KI had been formed. The temperatures of phase transitions and/or the interactions of SnS and flux materials were determined by differential thermal analysis. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

Science.gov (United States)

Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

2018-01-01

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

PROTEUS-SN User Manual

Energy Technology Data Exchange (ETDEWEB)

Shemon, Emily R. [Argonne National Lab. (ANL), Argonne, IL (United States); Smith, Micheal A. [Argonne National Lab. (ANL), Argonne, IL (United States); Lee, Changho [Argonne National Lab. (ANL), Argonne, IL (United States)

2016-02-16

PROTEUS-SN is a three-dimensional, highly scalable, high-fidelity neutron transport code developed at Argonne National Laboratory. The code is applicable to all spectrum reactor transport calculations, particularly those in which a high degree of fidelity is needed either to represent spatial detail or to resolve solution gradients. PROTEUS-SN solves the second order formulation of the transport equation using the continuous Galerkin finite element method in space, the discrete ordinates approximation in angle, and the multigroup approximation in energy. PROTEUS-SN’s parallel methodology permits the efficient decomposition of the problem by both space and angle, permitting large problems to run efficiently on hundreds of thousands of cores. PROTEUS-SN can also be used in serial or on smaller compute clusters (10’s to 100’s of cores) for smaller homogenized problems, although it is generally more computationally expensive than traditional homogenized methodology codes. PROTEUS-SN has been used to model partially homogenized systems, where regions of interest are represented explicitly and other regions are homogenized to reduce the problem size and required computational resources. PROTEUS-SN solves forward and adjoint eigenvalue problems and permits both neutron upscattering and downscattering. An adiabatic kinetics option has recently been included for performing simple time-dependent calculations in addition to standard steady state calculations. PROTEUS-SN handles void and reflective boundary conditions. Multigroup cross sections can be generated externally using the MC2-3 fast reactor multigroup cross section generation code or internally using the cross section application programming interface (API) which can treat the subgroup or resonance table libraries. PROTEUS-SN is written in Fortran 90 and also includes C preprocessor definitions. The code links against the PETSc, METIS, HDF5, and MPICH libraries. It optionally links against the MOAB library and

AMI-LA 15 GHz Observation of the Type IIP Supernova SN 2017eaw

Science.gov (United States)

Bright, Joe; Mooley, Kunal; Fender, Rob; Horesh, Assaf

2017-05-01

SN 2017eaw was discovered by Patrick Wiggins on 2017 May 14.24 and confirmed as a transient object (located in NGC 6946, at a distance of around 5.5 Mpc) in follow up observations from the McDonald observatory (ATel #10372).

Synthesis of Pt-Sn core-shell nanoparticles deposited on SBA-15 modified

Energy Technology Data Exchange (ETDEWEB)

Alvarez-Contreras, L.; Alonso-Lemus, I. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia (Mexico); Botte, G. G. [Ohio University, Center for Electrochemical Engineering Research, Department of Chemical and Biomolecular Engineering (United States); Verde-Gomez, Y., E-mail: ysmaelverde@yahoo.com [Instituto Tecnologico de Cancun (Mexico)

2013-07-15

A novel one-step synthesis method to prepare Pt-Sn bimetallic nanoparticles supported on mesoporous silica with high surface area (SBA-15, 700 m{sup 2}/g) and narrow pore size distribution (around 9.5 nm) was developed. Tin incorporation plays an important dual role, to create active sites into the silica walls that serve as particles anchors center, and to grow Pt-Sn core-shell nanoparticles. High-resolution transmission and scanning electron microscopy, and X-ray diffraction pattern confirm the formation of the Pt-Sn core-shell type nanoparticles ( Almost-Equal-To 1-10 nm). The metal loading was 2.2 and 2.3 wt% for Pt and Sn, respectively. Electron microscopy results show that the metal nanoparticles were deposited not only on the matrix, but also inside of it. Structural, textural, and morphological features of the SBA-15 were slightly affected after the nanoparticles deposition, maintaining its high surface area. The results obtained suggest that Pt-Sn on SBA-15 could be attractive material for several catalytic applications, due to the narrow particle size distribution achieved (from 1 to 10 nm) the high dispersion on the support, as well as the Pt-Sn alloy developed.Graphical Abstract.

Spectroscopic Classification of SN 2018bek as a Young Type II Supernova

Science.gov (United States)

Xiang, Danfeng; Wang, Xiaofeng; Zhang, Kaicheng; Li, Wenxiong; DerKacy, James; Baron, Eddie; Brink, Thomas; Zheng, Weikang; Filippenko, Alex; Lin, Han; Rui, Liming; Hu, Lei; Hu, Maokai; Zhang, Tianmeng; Zhang, Jujia

2018-05-01

We obtained a few optical spectra of SN 2018bek,discovered by Jaroslaw Grzegorzek,on UT May 05-09 2018 with the 3.5m telescope (+Dual Imaging Spectrograph) at the Apache Point Observatory, the 2.16-m telescope(+BFOSC) at Xinglong Observatory of NAOC, and the Lick 3.0-m telescope (+Kast) at Lick Observatory.

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-01-01

SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

Science.gov (United States)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-02-01

SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Interfacial microstructures and solder joint strengths of the Sn-8Zn-3Bi and Sn-9Zn-lAl Pb-free solder pastes on OSP finished printed circuit boards

Energy Technology Data Exchange (ETDEWEB)

Lin, C.-T. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miaoli 36003, Taiwan (China); Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Section 4, Chung-Hsing Road, Chutung, Hsinchu 31040, Taiwan (China); Hsi, C.-S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miaoli 36003, Taiwan (China); Wang, M.-C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China)], E-mail: mcwang@kmu.edu.tw; Chang, T.-C.; Liang, M.-K. [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Section 4, Chung-Hsing Road, Chutung, Hsinchu 31040, Taiwan (China)

2008-07-14

Two kinds of lead-free solders, Sn-8Zn-3Bi and Sn-9Zn-lAl, were used to mount passive components onto printed circuit boards via a re-flow soldering process. The samples were stored at 150 deg. C for 200, 400, 600, 800, and 1100 h. The microstructures of the samples after aged at 150 deg. C for various times were characterized using optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and the analyzed of solder joint shear strengths. The joint strength between Sn-8Zn-3Bi and Cu pad was about 4.0 {+-} 0.3 kg, while the strength between Sn-9Zn-lAl and Cu pad had values of 2.6 {+-} 0.1 kg. Both kinds of solder joints exhibited reduced strengths with increasing aging times. After aging at 150 deg. C for 1100 h, the joints strengths of Sn-8Zn-3Bi and Sn-9Zn-lAl were 1.8 {+-} 0.3 and 1.7 {+-} 0.3 kg, respectively. Both the Sn-8Zn-3Bi and Sn-9Zn-lAl joints showed brittle fracture behaviors. A flat layer of Cu{sub 5}Zn{sub 8} intermetallic compound (IMC) was formed between Sn-8Zn-3Bi solder and Cu pad after reflow. When the aging time was increased to 400 h, Zn-depletion and formation of Cu{sub 6}Sn{sub 5} IMC were observed in the solders due to the interaction between the tin and zinc compounds. The interaction between Sn-9Zn-lAl solder and Cu pad had similar behavior, however, Cu{sub 6}Sn{sub 5} IMC formed in Sn-9Zn-lAl solder when after aging at 150 deg. C for 600 h. As the aging time increased, both types of solders generated clear IMC spalling layers with large and continuous voids. Those voids substantially decreased the joint strength.

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Science.gov (United States)

Aubin, J.; Hartmann, J. M.

2018-01-01

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

HPLC method for determination of SN-38 content and SN-38 entrapment efficiency in a novel liposome-based formulation, LE-SN38.

Science.gov (United States)

Xuan, Tong; Zhang, J Allen; Ahmad, Imran

2006-05-03

A simple HPLC method was developed for quantification of SN-38, 7-ethyl-10-hydroxycamptothecin, in a novel liposome-based formulation (LE-SN38). The chromatographic separation was achieved on an Agilent Zorbax SB-C18 (4.6 mmx250 mm, 5 microm) analytical column using a mobile phase consisting of a mixture of NaH2PO4 (pH 3.1, 25 mM) and acetonitrile (50:50, v/v). SN-38 was detected at UV wavelength of 265 nm and quantitatively determined using an external calibration method. The limit of detection (LOD) and limit of quantitation (LOQ) were found to be 0.05 and 0.25 microg/mL, respectively. The individual spike recovery of SN-38 ranged from 100 to 101%. The percent of relative standard deviation (%R.S.D.) of intra-day and inter-day analyses were less than 1.6%. The method validation results confirmed that the method is specific, linear, accurate, precise, robust and sensitive for its intended use. The current method was successfully applied to the determination of SN-38 content and drug entrapment efficiency in liposome-based formulation, LE-SN38 during early stage formulation development.

P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

KAUST Repository

Wang, Zhenwei

2018-03-11

Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

Ab initio study of the compound-energy modeling of multisublattice structures: The (hP6) Ni{sub 2}In-type intermetallics of the Ni–In–Sn system

Energy Technology Data Exchange (ETDEWEB)

Ramos de Debiaggi, S., E-mail: susana.ramos@fain.uncoma.edu.ar [Facultad de Ingeniería, Universidad Nacional del Comahue, Buenos Aires 1400, 8300 Neuquén (Argentina); Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas – CONICET-UNCo (Argentina); González Lemus, N.V. [Facultad de Ingeniería, Universidad Nacional del Comahue, Buenos Aires 1400, 8300 Neuquén (Argentina); Deluque Toro, C. [Grupo de Nuevos Materiales, Universidad de la Guajira, Riohacha (Colombia); Fernández Guillermet, A. [CONICET - Instituto Balseiro, Centro Atómico Bariloche, Avda. Bustillo 9500, 8400 Bariloche (Argentina)

2015-01-15

Highlights: • A DFT study of the compounds involved in CALPHAD modeling of the Ni–In–Sn (hP6) phase. • Several three-sublattice compounds of Ni, In, Sn and vacancies are studied ab initio. • Structural, cohesive and thermodynamic properties and the electronic DOS are reported. • Trends in calculated properties are correlated with changes in electronic structure. • A picture of the chemical bonding trends for these s-p/d type compounds is discussed. - Abstract: The thermodynamic modeling of non-stoichiometric, multisublattice intermetallic phases using the Compound-Energy Formalism (CEF) involves the determination of parameters representing the Gibbs energy (G{sub m}) of binary compounds, the so-called “end-member compounds” (EMCs), which are often metastable or hypothetical. In current CALPHAD (i.e., “Calculation of Phase Diagrams”) work, these quantities are treated as free parameters to be determined by searching for the best fit to the available information in the optimization procedure. The general purpose of this paper is to propose a theoretical approach to the study of the EMCs which makes use of density-functional-theory (DFT) ab initio calculations. The present method is applied to the EMCs involved in the CEF modeling of the non-stoichiometric (hP6) Ni{sub 2}In-structure type phase of the Ni–In and Ni–In–Sn systems using the three-sublattice models (Ni){sub 1}(Ni,Va){sub 1}(In,Ni){sub 1} and (Ni,Va){sub 1}(Ni,Va){sub 1}(In,Ni,Sn){sub 1}, respectively. By means of systematic ab initio projected augmented waves (PAW) calculations using the VASP code we study the EMCs involved in the CEF formulations of the G{sub m} for this phase in the binary and the ternary systems. Specifically, we study the twelve EMCs corresponding to the following sublattice occupations: (Ni){sub 1}(Ni){sub 1}(In){sub 1}, which is usually described as Ni:Ni:In (i.e., a compound with formula “Ni{sub 2}In”), Ni:Ni:Ni (i.e., “Ni{sub 3}”), Ni:Ni:Sn (�

In Situ High-Resolution Transmission Electron Microscopy (TEM) Observation of Sn Nanoparticles on SnO2 Nanotubes Under Lithiation.

Science.gov (United States)

Cheong, Jun Young; Chang, Joon Ha; Kim, Sung Joo; Kim, Chanhoon; Seo, Hyeon Kook; Shin, Jae Won; Yuk, Jong Min; Lee, Jeong Yong; Kim, Il-Doo

2017-12-01

We trace Sn nanoparticles (NPs) produced from SnO2 nanotubes (NTs) during lithiation initialized by high energy e-beam irradiation. The growth dynamics of Sn NPs is visualized in liquid electrolytes by graphene liquid cell transmission electron microscopy. The observation reveals that Sn NPs grow on the surface of SnO2 NTs via coalescence and the final shape of agglomerated NPs is governed by surface energy of the Sn NPs and the interfacial energy between Sn NPs and SnO2 NTs. Our result will likely benefit more rational material design of the ideal interface for facile ion insertion.

GLAG theory for superconducting property variations with A15 composition in Nb3Sn wires.

Science.gov (United States)

Li, Yingxu; Gao, Yuanwen

2017-04-25

We present a model for the variation of the upper critical field H c2 with Sn content in A15-type Nb-Sn wires, within the Ginzburg-Landau-Abrikosov-Gor'kov (GLAG) theory frame. H c2 at the vicinity of the critical temperature T c is related quantitatively to the electrical resistivity ρ, specific heat capacity coefficient γ and T c . H c2 versus tin content is theoretically formulated within the GLAG theory, and generally reproduces the experiment results. As Sn content gradually approaches the stoichiometry, A15-type Nb-Sn undergoes a transition from the dirty limit to clean limit, split by the phase transformation boundary. The H-T phase boundary and pinning force show different behaviors in the cubic and tetragonal phase. We dipict the dependence of the composition gradient on the superconducting properties variation in the A15 layer, as well as the curved tail at vicinity of H c2 in the Kramer plot of the Nb 3 Sn wire. This helps understanding of the inhomogeneous-composition inducing discrepancy between the results by the state-of-art scaling laws and experiments.

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

Science.gov (United States)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Photometry of SN 2002ic and implications for the progenitor mass-loss history

International Nuclear Information System (INIS)

Wood-Vasey, W.M.; Wang, L.; Aldering, G.

2004-01-01

We present new pre-maximum and late-time optical photometry of the Type Ia/IIn supernova 2002ic. These observations are combined with the published V-band magnitudes of Hamuy et al. (2003) and the VLT spectrophotometry of Wang et al. (2004) to construct the most extensive light curve to date of this unusual supernova. The observed flux at late time is significantly higher relative to the flux at maximum than that of any other observed Type Ia supernova and continues to fade very slowly a year after explosion. Our analysis of the light curve suggests that a non-Type Ia supernova component becomes prominent ∼20 days after explosion. Modeling of the non-Type Ia supernova component as heating from the shock interaction of the supernova ejecta with pre-existing circumstellar material suggests the presence of a ∼1.7 x 1015 cm gap or trough between the progenitor system and the surrounding circumstellar material. This gap could be due to significantly lower mass-loss ∼15 (nu omega /10 km/s) -1 years prior to explosion or evacuation of the circumstellar material by a low-density fast wind. The latter is consistent with observed properties of proto-planetary nebulae and with models of white-dwarf + asymptotic giant branch star progenitor systems with the asymptotic giant branch star in the proto-planetary nebula phase

Effects of the copper content on the structural and electrical properties of Cu{sub 2}ZnSnSe{sub 4} bulks

Energy Technology Data Exchange (ETDEWEB)

Tsega, Moges, E-mail: mogestsega@yahoo.com [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Department of Physics, Bahir Dar University (Ethiopia); Dejene, F.B.; Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa)

2016-01-01

We have investigated the concept of defect in Cu{sub x}ZnSnSe{sub 4} (x=1.6–2.0) and Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} (y= 1.6–2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. All samples were found to exhibit p-type semiconductor for Cu{sub x}ZnSnSe{sub 4}, while n-type of behavior obtained at y= 1.8–2.0 for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn{sup 4+} acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×10{sup 17} cm{sup −3} showed the highest mobility of around 58 cm{sup 2}/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

Lithium insertion mechanism in SnS2

International Nuclear Information System (INIS)

Lefebvre-Devos, I.; Olivier-Fourcade, J.; Jumas, J.C.; Lavela, P.

2000-01-01

We study lithium insertion in SnS 2 by means of 119 Sn Moessbauer spectroscopy, x-ray absorption spectroscopy at Sn L I,III , and S K edges, and theoretical electronic structures (calculated in the density-functional theory framework). An insertion mechanism is derived according to the Li amount. It shows the influence of the SnS 2 -layered structure on the Sn reduction, particularly the possibility of an intermediate oxidation state between Sn IV and Sn II , which is not observed during Li insertion in three-dimensional sulfides

Sandwich-like C@SnO2/Sn/void@C hollow spheres as improved anode materials for lithium ion batteries

Science.gov (United States)

Wang, Huijun; Jiang, Xinya; Chai, Yaqin; Yang, Xia; Yuan, Ruo

2018-03-01

As lithium ion batteries (LIBs) anode, SnO2 suffers fast capacity fading due to its large volume expansion during discharge/charge process. To overcome the problem, sandwich-like C@SnO2/Sn/void@C hollow spheres (referred as C@SnO2/Sn/void@C HSs) are prepared by in-situ polymerization and carbonization, using hollow SnO2 as self-template and dopamine as carbon source. The C@SnO2/Sn/void@C HSs possesses the merits of hollow and core/void/shell structure, so that they can accommodate the volume change under discharge/charge process, shorten the transmission distance of Li ions, own more contact area for the electrolyte. Thanks to these advantages, C@SnO2/Sn/void@C HSs display excellent electrochemical performance as anode materials for LIBs, which deliver a high capacity of 786.7 mAh g-1 at the current density of 0.5 A g-1 after 60 cycles. The simple synthesis method for C@SnO2/Sn/void@C HSs with special structure will provide a promising method for preparing other anode materials for LIBs.

One-pot formation of SnO2 hollow nanospheres and α-Fe2O3@SnO2 nanorattles with large void space and their lithium storage properties

KAUST Repository

Chen, Jun Song

2009-01-01

In this work, uniform SnO2 hollow nanospheres with large void space have been synthesized by a modified facile method. The void space can be easily controlled by varying the reaction time. The formation of interior void space is based on an inside-out Ostwald ripening mechanism. More importantly, this facile one-pot process can be extended to fabricate rattle-type hollow structures using α-Fe2O3@SnO2 as an example. Furthermore, the electrochemical lithium storage properties have been investigated. It is found that α-Fe2O3@SnO 2 nanorattles manifest a much lower initial irreversible loss and higher reversible capacity compared to SnO2 hollow spheres. This interesting finding supports a general hypothesis that a synergistic effect between functional core and shell materials can lead to improved lithium storage capabilities. © The Royal Society of Chemistry 2009.

Scintillation and optical properties of Sn-doped Ga2O3 single crystals

Science.gov (United States)

Usui, Yuki; Nakauchi, Daisuke; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-06-01

Sn-doped Ga2O3 single crystals were synthesized by the Floating Zone (FZ) method. In photoluminescence (PL) under the excitation wavelength of 280 nm, we observed two types of luminescence: (1) defect luminescence due to recombination of the donor/acceptor pairs which appears at 430 nm and (2) the nsnp-ns2 transitions of Sn2+ which appear at 530 nm. The PL and scintillation decay time curves of the Sn-doped samples were approximated by a sum of exponential decay functions. The faster two components were ascribed to the defect luminescence, and the slowest component was owing to the nsnp-ns2 transitions. In the pulse height spectrum measurements under 241Am α-rays irradiation, all the Sn-doped Ga2O3 samples were confirmed to show a full energy absorption peak but the undoped one. Among the present samples, the 1% Sn-doped sample exhibited the highest scintillation light yield (1,500 ± 150 ph/5.5 MeV-α).

Sn surface-enriched Pt-Sn bimetallic nanoparticles as a selective and stable catalyst for propane dehydrogenation

KAUST Repository

Zhu, Haibo

2014-12-01

A new one pot, surfactant-free, synthetic route based on the surface organometallic chemistry (SOMC) concept has been developed for the synthesis of Sn surface-enriched Pt-Sn nanoparticles. Bu3SnH selectively reacts with [Pt]-H formed in situ at the surface of Pt nanoparticles, Pt NPs, obtained by reduction of K2PtCl4 by LiB(C2H5)3H. Chemical analysis, 1H MAS and 13C CP/MAS solid-state NMR as well as two-dimensional double-quantum (DQ) and triple-quantum (TQ) experiments show that organo-tin moieties Sn(n-C4H9) are chemically linked to the surface of Pt NPs to produce, in fine, after removal of most of the n-butyl fragment, bimetallic Pt-Sn nanoparticles. The Sn(n-CH2CH2CH2CH3) groups remaining at the surface are believed to stabilize the as-synthesized Pt-Sn NPs, enabling the bimetallic NPs to be well dispersed in THF. Additionally, the Pt-Sn nanoparticles can be supported on MgAl2O4 during the synthesis of the nanoparticles. Some of the Pt-Sn/MgAl2O4 catalyst thus prepared exhibits high activity in PROX of CO and an extremely high selectivity and stability in propane dehydrogenation to propylene. The enhanced activity in propane dehydrogenation is associated with the high concentration of inactive Sn at the surface of Pt nanoparticles which ”isolates” the active Pt atoms. This conclusion is confirmed by XRD, NMR, TEM, and XPS analysis.

THE RISE OF SN 2014J IN THE NEARBY GALAXY M82

International Nuclear Information System (INIS)

Goobar, A.; Johansson, J.; Amanullah, R.; Ferretti, R.; Cao, Y.; Perley, D. A.; Tendulkar, S. P.; Kasliwal, M. M.; Nugent, P. E.; Harris, C.; Gal-Yam, A.; Ofek, E. O.; Dennefeld, M.; Valenti, S.; Arcavi, I.; Banerjee, D. P. K.; Venkataraman, V.; Joshi, V.; Ashok, N. M.; Cenko, S. B.

2014-01-01

We report on the discovery of SN 2014J in the nearby galaxy M82. Given its proximity, it offers the best opportunity to date to study a thermonuclear supernova (SN) over a wide range of the electromagnetic spectrum. Optical, near-IR, and mid-IR observations on the rising light curve, orchestrated by the intermediate Palomar Transient Factory, show that SN 2014J is a spectroscopically normal Type Ia supernova (SN Ia), albeit exhibiting high-velocity features in its spectrum and heavily reddened by dust in the host galaxy. Our earliest detections start just hours after the fitted time of explosion. We use high-resolution optical spectroscopy to analyze the dense intervening material and do not detect any evolution in the resolved absorption features during the light curve rise. Similar to other highly reddened SNe Ia, a low value of total-to-selective extinction, R V ≲ 2, provides the best match to our observations. We also study pre-explosion optical and near-IR images from Hubble Space Telescope with special emphasis on the sources nearest to the SN location

Microstructural investigation and SnO nanodefects in spray-pyrolyzed SnO2 thin films

DEFF Research Database (Denmark)

Thanachayanont, Chanchana; Yordsri, Visittapong; Boothroyd, Chris

2011-01-01

Spray pyrolysis is one of the most cost-effective methods to prepare SnO2 films due to its ability to deposit large uniform area, low fabrication cost, simplicity and low deposition temperature. Conventionally, scanning electron microscopy (SEM) and X-Ray Diffraction (XRD) are routinely used...... diffraction (CBED). It was found that large grain-size vertically-aligned columnar SnO2 grains were formed after a few layers of small grain-size randomly oriented SnO2 grains. Moreover, CBED showed the presence of SnO nanodefects that had not been reported before and could not be detected by SEM or XRD....

Fluid sensitive nanoscale switching with quantum levitation controlled by $\\alpha$-Sn/$\\beta$-Sn phase transition

OpenAIRE

Boström, Mathias; Dou, Maofeng; Malyi, Oleksandr I.; Parashar, Prachi; Parsons, Drew F.; Brevik, Iver; Persson, Clas

2018-01-01

We analyze the Lifshitz pressure between silica and tin separated by a liquid mixture of bromobenzene and chlorobenzene. We show that the phase transition from semimetallic α−Sn to metallic β−Sn can switch Lifshitz forces from repulsive to attractive. This effect is caused by the difference in dielectric functions of α−Sn and β−Sn, giving both attractive and repulsive contributions to the total Lifshitz pressure in different frequency regions controlled by the composition of the intervening l...

Detection of Sn(II) ions via quenching of the fluorescence of carbon nanodots

International Nuclear Information System (INIS)

Mohd Yazid, S.N.A.; Chin, S.F.; Pang, S.C.; Ng, S.M.

2013-01-01

We report that fluorescent carbon nanodots (C-dots) can act as an optical probe for quantifying Sn(II) ions in aqueous solution. C-dots are synthesized by carbonization and surface oxidation of preformed sago starch nanoparticles. Their fluorescence is significantly quenched by Sn(II) ions, and the effect can be used to determine Sn(II) ions. The highest fluorescence intensity is obtained at a concentration of 1.75 mM of C-dots in aqueous solution. The probe is highly selective and hardly interfered by other ions. The quenching mechanism appears to be predominantly of the static (rather than dynamic) type. Under optimum conditions, there is a linear relationship between fluorescence intensity and Sn(II) ions concentration up to 4 mM, and with a detection limit of 0.36 μM. (author)

Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sunil, E-mail: skbgudha@gmail.com; Ansari, Mohd Zubair; Khare, Neeraj [Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, Delhi-110016 (India)

2016-05-23

A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The result demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.

99mTc bone scanning agents preparation and chemical analysis of Tc(Sn)pyrophosphate, Tc(Sn)MDP and Tc(Sn)HMDP

International Nuclear Information System (INIS)

Kroesbergen, J.

1986-01-01

This thesis describes a comparison of the preparation, composition and properties of three bone scanning agents: 99m Tc(Sn)pyrophosphate, 99m Tc(Sn)MDP and 99m Tc(Sn)HMDP. This study has been performed for two reasons: First to investigate the preparation and composition of the radiopharmaceuticals as a function of experimental conditions. Together with previously reported results for 99m Tc(Sn)EHDP, obtained in a similar way, this enables to use well-defined preparations of the bone scanning agents. Secondly to gain an insight in the mechanism in which the agents behave 'in vivo'. Because the 'in vivo' process is too complicated to study directly, it seemed more appropriate to perform 'in vitro' investigations as simplifications of the 'in vivo' situation. 304 refs.; 26 figs.; 31 tabs

Quaternary selenostannates Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} and AGaSnSe{sub 4} (A=K, Rb, and Cs) through rapid cooling of melts. Kinetics versus thermodynamics in the polymorphism of AGaSnSe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Hwang, S -J; Iyer, R G; Kanatzidis, M G

2004-10-01

The quaternary alkali-metal gallium selenostannates, Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} and AGaSnSe{sub 4} (A=K, Rb, and Cs), were synthesized by reacting alkali-metal selenide, Ga, Sn, and Se with a flame melting-rapid cooling method. Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} crystallizes in the non-centrosymmetric space group C2 with cell constants a=13.308(3) A, b=7.594(2) A, c=13.842(3) A, {beta}=118.730(4) deg., V=1226.7(5) A{sup 3}. {alpha}-KGaSnSe{sub 4} crystallizes in the tetragonal space group I4/mcm with a=8.186(5) A and c=6.403(5) A, V=429.1(5) A{sup 3}. {beta}-KGaSnSe{sub 4} crystallizes in the space group P2{sub 1}/c with cell constants a=7.490(2) A, b=12.578(3) A, c=18.306(5) A, {beta}=98.653(5) deg., V=1705.0(8) A{sup 3}. The unit cell of isostructural RbGaSnSe{sub 4} is a=7.567(2) A, b=12.656(3) A, c=18.277(4) A, {beta}=95.924(4) deg., V=1741.1(7) A{sup 3}. CsGaSnSe{sub 4} crystallizes in the orthorhombic space group Pmcn with a=7.679(2) A, b=12.655(3) A, c=18.278(5) A, V=1776.1(8) A{sup 3}. The structure of Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} consists of a polar three-dimensional network of trimeric (Sn,Ga){sub 3}Se{sub 9} units with Na atoms located in tunnels. The AGaSnSe{sub 4} possess layered structures. The compounds show nearly the same Raman spectral features, except for Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6}. Optical band gaps, determined from UV-Vis spectroscopy, range from 1.50 eV in Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} to 1.97 eV in CsGaSnSe{sub 4}. Cooling of the melts of KGaSnSe{sub 4} and RbGaSnSe{sub 4} produces only kinetically stable products. The thermodynamically stable product is accessible under extended annealing, which leads to the so-called {gamma}-form (BaGa{sub 2}S{sub 4}-type) of these compounds.

SnSAG5 is an alternative surface antigen of Sarcocystis neurona strains that is mutually exclusive to SnSAG1.

Science.gov (United States)

Crowdus, Carolyn A; Marsh, Antoinette E; Saville, Willliam J; Lindsay, David S; Dubey, J P; Granstrom, David E; Howe, Daniel K

2008-11-25

Sarcocystis neurona is an obligate intracellular parasite that causes equine protozoal myeloencephalitis (EPM). Previous work has identified a gene family of paralogous surface antigens in S. neurona called SnSAGs. These surface proteins are immunogenic in their host animals, and are therefore candidate molecules for development of diagnostics and vaccines. However, SnSAG diversity exists in strains of S. neurona, including the absence of the major surface antigen gene SnSAG1. Instead, sequence for an alternative SnSAG has been revealed in two of the SnSAG1-deficient strains. Herein, we present data characterizing this new surface protein, which we have designated SnSAG5. The results indicated that the protein encoded by the SnSAG5 sequence is indeed a surface-associated molecule that has characteristics consistent with the other SAGs identified in S. neurona and related parasites. Importantly, Western blot analyses of a collection of S. neurona strains demonstrated that 6 of 13 parasite isolates express SnSAG5 as a dominant surface protein instead of SnSAG1. Conversely, SnSAG5 was not detected in SnSAG1-positive strains. One strain, which was isolated from the brain of a sea otter, did not express either SnSAG1 or SnSAG5. Genetic analysis with SnSAG5-specific primers confirmed the presence of the SnSAG5 gene in Western blot-positive strains, while also suggesting the presence of a novel SnSAG sequence in the SnSAG1-deficient, SnSAG5-deficient otter isolate. The findings provide further indication of S. neurona strain diversity, which has implications for diagnostic testing and development of vaccines against EPM as well as the population biology of Sarcocystis cycling in the opossum definitive host.

VERY LATE PHOTOMETRY OF SN 2011fe

International Nuclear Information System (INIS)

Kerzendorf, W. E.; Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J.

2014-01-01

The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ≈930 days with GMOS-N mounted on the Gemini North telescope (g = 23.43 ± 0.28, r = 24.14 ± 0.14, i = 23.91 ± 0.18, and z = 23.90 ± 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of 56 Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs

Relationship Structures and Semantic Type Assignments of the UMLS Enriched Semantic Network

Science.gov (United States)

Zhang, Li; Halper, Michael; Perl, Yehoshua; Geller, James; Cimino, James J.

2005-01-01

Objective: The Enriched Semantic Network (ESN) was introduced as an extension of the Unified Medical Language System (UMLS) Semantic Network (SN). Its multiple subsumption configuration and concomitant multiple inheritance make the ESN's relationship structures and semantic type assignments different from those of the SN. A technique for deriving the relationship structures of the ESN's semantic types and an automated technique for deriving the ESN's semantic type assignments from those of the SN are presented. Design: The technique to derive the ESN's relationship structures finds all newly inherited relationships in the ESN. All such relationships are audited for semantic validity, and the blocking mechanism is used to block invalid relationships. The mapping technique to derive the ESN's semantic type assignments uses current SN semantic type assignments and preserves nonredundant categorizations, while preventing new redundant categorizations. Results: Among the 426 newly inherited relationships, 326 are deemed valid. Seven blockings are applied to avoid inheritance of the 100 invalid relationships. Sixteen semantic types have different relationship structures in the ESN as compared to those in the SN. The mapping of semantic type assignments from the SN to the ESN avoids the generation of 26,950 redundant categorizations. The resulting ESN contains 138 semantic types, 149 IS-A links, 7,303 relationships, and 1,013,876 semantic type assignments. Conclusion: The ESN's multiple inheritance provides more complete relationship structures than in the SN. The ESN's semantic type assignments avoid the existing redundant categorizations appearing in the SN and prevent new ones that might arise due to multiple parents. Compared to the SN, the ESN provides a more accurate unifying semantic abstraction of the UMLS Metathesaurus. PMID:16049233

Electronic and magnetic properties of rare earth-Sn3 compounds for 119Sn Moessbauer spectroscopy

International Nuclear Information System (INIS)

Sanchez, J.P.; Friedt, J.M.; Shenoy, G.K.; Percheron, A.; Achard, J.C.

1975-01-01

The electronic and magnetic properties of RESn 3 compounds (RE=La, Ce, Pr, Nd, Sm, Eu, Gd, Yb) have been investigated using the 23.8keV Moessbauer resonance of 119 Sn. The isomer shifts and quadrupole interactions are nearly the same in all compounds. The transferred magnetic fields and their orientation with respect to the principal electric field gradient axis at various Sn sites in the magnetically ordered state of RESn 3 (RE=Pr, Nd, Sm, Eu, Gd) have been utilized to get information about the magnetic structure. An evaluation of the transferred fields in PrSn 3 and NdSn 3 shows that the spin density at the Sn nucleus is nearly the same in both compounds [fr

The tin-rich copper lithium stannides: Li3Cu6Sn4 and Li2CuSn2

International Nuclear Information System (INIS)

Fuertauer, Siegfried; Flandorfer, Hans; Effenberger, Herta S.

2015-01-01

The Sn rich ternary intermetallic compounds Li 3 Cu 6 Sn 4 (CSD-427097) and Li 2 CuSn 2 (CSD-427098) were synthesized from the pure elements by induction melting and annealing at 400 C. Structural investigations were performed by powder- and single-crystal XRD. Li 3 Cu 6 Sn 4 crystallizes in space group P6/mmm; it is structurally related to but not isotypic with MgFe 6 Ge 6 (a = 5.095(2) Aa, c = 9.524(3) Aa; wR 2 = 0.059; 239 unique F 2 -values, 17 free variables). Li 3 Cu 6 Sn 4 is characterized by two sites with a mixed Cu:Sn occupation. In contrast to all other Cu-Li-Sn compounds known so far, any mixed occupation was found for Cu-Li pairs only. In addition, one Li site is only half occupied. The second Sn rich phase is Li 2 CuSn 2 (space group I4 1 /amd, a = 4.4281(15) Aa, c = 19.416(4) Aa; wR 2 = 0.033; 213 unique F 2 -values, 12 atom free variables); it is the only phase in the Cu-Li-Sn system which is noted for full ordering. Both crystal structures exhibit 3D-networks which host Li atoms in channels. They are important for understanding the lithiation mechanism in Cu-Sn electrodes for Li-ion batteries.

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation; Preparacao de eletrocatalisadores PtSnCu/C e PtSn/C e ativacao por processos de dealloying para aplicacao na oxidacao eletroquuimica do etanol

Energy Technology Data Exchange (ETDEWEB)

Crisafulli, Rudy

2013-06-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H{sub 2}PtCl{sub 6}.6H{sub 2}O, SnCl{sub 2}.2H{sub 2}O and CuCl{sub 2}.2H{sub 2}O as metal sources, NaBH{sub 4} and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of <=2 nm to 3 nm and after dealloying there were no significant variations in sizes. The energy dispersive Xray analysis of the as-synthesized electrocatalysts showed a Pt:Sn and Pt:Sn:Cu atomic ratios similar to the nominal values. After chemical and electrochemical dealloying of the electrocatalysts the ranged Pt:Sn and Pt:Sn:Cu atomic ratios showed that Cu and Sn atoms were removed. However, chemical dealloying process proved to be more efficient for removing Cu and electrochemical dealloying for removing Sn. The line scan energy dispersive X-ray analysis showed that acid and electrochemical treatments were efficient to dealloying Cu and/or Sn superficial atoms of

Hot Dust! Late-Time Infrared Emission From Supernovae

Science.gov (United States)

Fox, Ori; Skrutskie, M. F.; Chevalier, R. A.

2010-01-01

Supernovae light curves typically peak and fade in the course of several months. Some supernovae , however, exhibit late-time infrared emission that in some cases can last for several years. These supernovae tend to be of the Type IIn subclass, which is defined by narrow hydrogen and helium emission lines arising from a dense, pre-existing circumstellar medium excited by the supernova radiation. Such a late-time ``IR excess'' with respect to the optical blackbody counterpart typically indicates the presence of warm dust. The origin and heating mechanism of the dust is not, however, always well constrained. In this talk, I will explore several scenarios that explain the observed late-time emission. In particular, I will discuss the case of the Type IIn SN 2005ip, which has displayed an ``IR excess'' for over 3 years. The results allow us to interpret the progenitor system and better understand the late stages of stellar evolution. Much of the data used for this analysis were obtained with TripleSpec, a medium-resolution near-infrared spectrograph located at Apache Point Observatory, NM, and FanCam, a JHK imager located at Fan Mountain Observatory, just outside of Charlottesville, VA. These two instruments were designed, fabricated, built, and commissioned by our instrumentation group at the University of Virginia. I will also spend some time discussing these instruments. I would like to thank the following for financial support of this work throughout my graduate career: NASA GSRP, NSF AAG-0607737, Spitzer PID 50256, Achievement Reward for College Scientists (ARCS), and the Virginia Space Grant Consortium.

Carbon and graphene double protection strategy to improve the SnOx electrode performance anodes for lithium-ion batteries

Science.gov (United States)

Zhu, Jian; Lei, Danni; Zhang, Guanhua; Li, Qiuhong; Lu, Bingan; Wang, Taihong

2013-05-01

SnOx is a promising high-capacity anode material for lithium-ion batteries (LIBs), but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. In this paper, SnOx carbon nanofibers (SnOx@CNFs) are firstly obtained in the form of a nonwoven mat by electrospinning followed by calcination in a 0.02 Mpa environment at 500 °C. Then we use a simple mixing method for the synthesis of SnOx@CNF@graphene (SnOx@C@G) nanocomposite. By this technique, the SnOx@CNFs can be homogeneously deposited in graphene nanosheets (GNSs). The highly scattered SnOx@C@G composite exhibits enhanced electrochemical performance as anode material for LIBs. The double protection strategy to improve the electrode performance through producing SnOx@C@G composites is versatile. In addition, the double protection strategy can be extended to the fabrication of various types of composites between metal oxides and graphene nanomaterials, possessing promising applications in catalysis, sensing, supercapacitors and fuel cells.SnOx is a promising high-capacity anode material for lithium-ion batteries (LIBs), but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. In this paper, SnOx carbon nanofibers (SnOx@CNFs) are firstly obtained in the form of a nonwoven mat by electrospinning followed by calcination in a 0.02 Mpa environment at 500 °C. Then we use a simple mixing method for the synthesis of SnOx@CNF@graphene (SnOx@C@G) nanocomposite. By this technique, the SnOx@CNFs can be homogeneously deposited in graphene nanosheets (GNSs). The highly scattered SnOx@C@G composite exhibits enhanced electrochemical performance as anode material for LIBs. The double protection strategy to improve the electrode performance through producing SnOx@C@G composites is versatile. In addition, the double protection strategy can be extended to the fabrication of various types of

Polarographic determination of Sn (II) and total Sn in PYRO and MDP radiopharmaceutical kits

International Nuclear Information System (INIS)

Sebastian, Maria V.A.; Lugon, Marcelo Di M.V.; Silva, Jose L. da; Fukumori, Neuza T.O.; Pereira, Nilda P.S. de; Silva, Constancia P.G. da; Matsuda, Margareth M.N.

2007-01-01

A sensitive, alternative method to atom absorption spectrometry, fluorimetry or potentiometry for the evaluation of tin(II) ions (0.1- 10 mg) and total tin in radiopharmaceutical kits was investigated. Differential pulse polarography was chosen. The supporting electrolyte was H 2 SO 4 3 mol L -1 and HCl 3 mol L -1 solution. The potential was swept from -250 to -800 mV vs Ag/AgCl/saturated KCl, using a dropping mercury electrode with 1 s drop time, 50 mV s -1 scan rate, -50 mV pulse amplitude, 40 ms pulse time and 10 mV step amplitude. Pure nitrogen was used to deaerate the polarographic cell solution for 5 min, before and after each sample introduction. Oxidation of Sn(II) was made in the same sample vial by adding H 2 O 2 (hydrogen peroxide) 10 mol L -1 , at 37 deg C, in order to quantify the total Sn. The calibration curve for Sn(II) and Sn(IV) was obtained in the concentration range of 0-10 ppm from a 1000 ppm standard solution. The detection limit of Sn(II) is 0.5 ppm and for Sn(IV) is 0.6 ppm. Differential pulse polarography was performed in the pyrophosphate (PYRO) and methylenediphosphonic acid (MDP) radiopharmaceutical kits, containing 2 mg and 1 mg of SnCl 2 .2H 2 O per vial, respectively. The described method for determination of stannous ion (Sn(II)), is selective, reproducible and adequate to be used in the quality control of lyophilized reagents and it shall be performed for other cold kits produced at IPEN. (author)

Nanostructuring and high thermoelectric efficiency in p-type Ag(Pb{sub 1-y}Sn{sub y}){sub m}SbTe{sub 2{sub +m}}

Energy Technology Data Exchange (ETDEWEB)

Androulakis, J; Hsu, K F; Pcionek, R; Kanatzidis, M G [Department of Chemistry, Michigan Sate University, East Lansing, MI 48824-1793 (United States); Kong, H; Uher, C [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); D' Angelo, J J; Downey, A; Hogan, T [Electrical and Computer Engineering Department, Michigan State University, East Lansing, MI 48824-1226 (United States)

2006-05-02

The p-type Ag(Pb{sub 1-y}Sn{sub y}){sub m}SbTe{sub 2{sub +m}} materials shown in the figure demonstrate promising thermoelectric properties that are controlled with the parameters y and m. They can reach a maximum figure of merit of {proportional_to} 1.45 at 630 K. This surpasses the figure of merit of the present state-of-the-art p-type materials such as TAGS (1.2) and PbTe (0.8) at comparable temperatures. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Low-temperature processed SnO{sub 2} compact layer for efficient mesostructure perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Duan, Jinxia; Xiong, Qiu; Feng, Bingjie; Xu, Yang; Zhang, Jun; Wang, Hao, E-mail: nanoguy@126.com

2017-01-01

Highlights: • Low-temperature processed 70 nm cl-SnO{sub 2} device exhibits maximum PCE. • Champion PSC after SnCl{sub 4} treatment acquires PCE of 15.07%. • Cl-SnO{sub 2} PSC via SnCl{sub 4} treatment exhibits superior stability to cl-TiO{sub 2} based PSC. - Abstract: SnO{sub 2} nanoparticle film has been synthesized via low- temperature (∼180 °C) solution-processing and proposed as compact layer in mesostructure perovskite-type solar cell (PSC). Low-temperature processed SnO{sub 2} compact layer (cl-SnO{sub 2}) brings perfect crystal-lattice and band-gap matching between electron selective layer and FTO substrate and close interface-contact between cl-SnO{sub 2} and mesoporous TiO{sub 2} layer (mp-TiO{sub 2}), which contributes to suppressing carrier recombination and optimizing device performance. In varied thickness cells, 70 nm cl-SnO{sub 2} device exhibits maximum power conversion efficiency (PCE). In order to further restrain photoelectron recombination and improve the photovoltaic performance, the surface modification of cl-SnO{sub 2} by SnCl{sub 4} aqueous solution has been carried out. The recombination behavior in the cell interior is greatly retarded via SnCl{sub 4} treatment and champion PSC after SnCl{sub 4} treatment has acquire PCE of 15.07%, which is higher than PCE of cl-TiO{sub 2} based PSC fabricated with same mp-TiO{sub 2} and perovskite procedures (13.3%). The stability of cl-SnO{sub 2} PSC via SnCl{sub 4} treatment has also been measured and its PCE reduces to 13.0% after 2 weeks in air.

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis and melting behaviour of Bi, Sn and Sn–Bi nanostructured alloy

Energy Technology Data Exchange (ETDEWEB)

Frongia, F.; Pilloni, M.; Scano, A.; Ardu, A.; Cannas, C.; Musinu, A. [Università di Cagliari, Dipartimento di Scienze Chimiche e Geologiche and Cagliari Research Unit of the National Consortium of Materials Science and Technology (INSTM), Cittadella Universitaria di Monserrato, 09042 Monserrato, CA (Italy); Borzone, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, Genoa University and Genoa Research Unit of the National Consortium of Materials Science and Technology (INSTM), Via Dodecaneso 31, I-16146 Genoa (Italy); Novakovic, R. [National Research Council (CNR), Institute for Energetics and Interphases (IENI), Via De Marini 6, 16149 Genoa (Italy); Ennas, G., E-mail: ennas@unica.it [Università di Cagliari, Dipartimento di Scienze Chimiche e Geologiche and Cagliari Research Unit of the National Consortium of Materials Science and Technology (INSTM), Cittadella Universitaria di Monserrato, 09042 Monserrato, CA (Italy)

2015-02-25

Highlights: • Aqueous solution route is used to produce Bi, Sn and Bi–Sn nanoparticles. • HRTEM revealed core–shell and Janus type structures of Bi–Sn nanoparticles. • Melting temperature depression of Bi and Bi–Sn nanoparticles were measured by DSC. • DSC data on Bi melting temperature depression agrees with theoretical values. - Abstract: Lead-free solders based on Bi–Sn bimetallic nanoclusters with eutectic composition (Bi{sub 43}Sn{sub 57}) were synthesized at low temperature by simultaneous reduction reaction from aqueous solution containing bismuth and tin chlorides, using potassium borohydride as a reducing agent. By the same processing route, pure bismuth and tin nanoparticles have also been prepared. Microstructure, morphology and composition of the samples were characterized by X-ray powder diffraction (XRD), transmission (TEM) and scanning electron microscopy (SEM). TEM images of Bi–Sn nanoparticles show average size ranging from 30 to 100 nm. Thermal behaviour of Bi–Sn nanopowders was studied by DSC (differential scanning calorimetry) and a melting temperature (135 °C) lower than that of the corresponding microcrystalline sample (139 °C) was observed. SEM micrographs of the thermally treated sample up to 400 °C show fine spherical grains in the micrometer range with finer powder particles on the surface. XRD powder diffraction analysis indicates the formation of bismuth and tin nanophases with an average particle size of 85 and 126 nm, respectively. The oxidation behaviour of the samples was also investigated. The results obtained have been analyzed in view of theoretical models describing the melting temperature depression of nanoparticles.

Internal friction behavior of liquid Bi-Sn alloys

International Nuclear Information System (INIS)

Wu Aiqing; Guo Lijun; Liu Changsong; Jia Erguang; Zhu Zhengang

2005-01-01

Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480 - bar Cand another at about 830 - bar C. Only a single internal-friction peak at about 830 - bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids

Internal friction behavior of liquid Bi-Sn alloys

Energy Technology Data Exchange (ETDEWEB)

Wu Aiqing [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Guo Lijun [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu Changsong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Jia Erguang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)]. E-mail: zgzhu@issp.ac.cn

2005-12-01

Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480{sup -}bar Cand another at about 830{sup -}bar C. Only a single internal-friction peak at about 830{sup -}bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids.

Sn-Sb-Se based binary and ternary alloys for phase change memory applications

Energy Technology Data Exchange (ETDEWEB)

Chung, Kyung-Min

2008-10-28

In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)

Phase Equilibria of the Ternary Sn-Pb-Co System at 250°C and Interfacial Reactions of Co with Sn-Pb Alloys

Science.gov (United States)

Wang, Chao-hong; Kuo, Chun-yi; Yang, Nian-cih

2015-11-01

The isothermal section of the ternary Sn-Pb-Co system at 250°C was experimentally determined through a series of the equilibrated Sn-Pb-Co alloys of various compositions. The equilibrium phases were identified on the basis of compositional analysis. For the Sn-Co intermetallic compounds (IMCs), CoSn3, CoSn2, CoSn and Co3Sn2, the Pb solubility was very limited. There exist five tie-triangle regions. The Co-Pb system involves one monotectic reaction, so the phase separation of liquid alloys near the Co-Pb side occurred prior to solidification. The immiscibility field was also determined. Additionally, interfacial reactions between Co and Sn-Pb alloys were conducted. The reaction phase for the Sn-48 at.%Pb and Sn-58 at.%Pb at 250°C was CoSn3 and CoSn2, respectively. Both of them were simultaneously formed in the Sn-53 at.%Pb/Co. The formed IMCs were closely associated to the phase equilibria relationship of the liquid-CoSn3-CoSn2 tie-triangle. Furthermore, with increasing temperatures, the phase formed in equilibrium with Sn-37 wt.%Pb was found to transit from CoSn3 to CoSn2 at 275°C. We propose a simple method of examining the phase transition temperature in the interfacial reactions to determine the boundaries of the liquid-CoSn3-CoSn2 tie-triangles at different temperatures.

Time-resolved Polarimetry of the Superluminous SN 2015bn with the Nordic Optical Telescope

DEFF Research Database (Denmark)

Leloudas, Giorgos; Maund, Justyn R.; Gal-Yam, Avishay

2017-01-01

We present imaging polarimetry of the superluminous supernova SN 2015bn, obtained over nine epochs between -20 and +46 days with the Nordic Optical Telescope. This was a nearby, slowly evolving Type I superluminous supernova that has been studied extensively and for which two epochs of spectropol......We present imaging polarimetry of the superluminous supernova SN 2015bn, obtained over nine epochs between -20 and +46 days with the Nordic Optical Telescope. This was a nearby, slowly evolving Type I superluminous supernova that has been studied extensively and for which two epochs...... of spectropolarimetry are also available. Based on field stars, we determine the interstellar polarization in the Galaxy to be negligible. The polarization of SN 2015bn shows a statistically significant increase during the last epochs, confirming previous findings. Our well-sampled imaging polarimetry series allows us...

EARLY RADIO AND X-RAY OBSERVATIONS OF THE YOUNGEST NEARBY TYPE Ia SUPERNOVA PTF 11kly (SN 2011fe)

International Nuclear Information System (INIS)

Horesh, Assaf; Kulkarni, S. R.; Carpenter, John; Kasliwal, Mansi M.; Ofek, Eran O.; Fox, Derek B.; Quimby, Robert; Gal-Yam, Avishay; Cenko, S. Bradley; De Bruyn, A. G.; Kamble, Atish; Wijers, Ralph A. M. J.; Van der Horst, Alexander J.; Kouveliotou, Chryssa; Podsiadlowski, Philipp; Sullivan, Mark; Maguire, Kate; Howell, D. Andrew; Nugent, Peter E.; Gehrels, Neil

2012-01-01

On 2011 August 24 (UT) the Palomar Transient Factory (PTF) discovered PTF11kly (SN 2011fe), the youngest and most nearby Type Ia supernova (SN Ia) in decades. We followed this event up in the radio (centimeter and millimeter bands) and X-ray bands, starting about a day after the estimated explosion time. We present our analysis of the radio and X-ray observations, yielding the tightest constraints yet placed on the pre-explosion mass-loss rate from the progenitor system of this supernova. We find a robust limit of M-dot ∼ -8 (w/100 km s -1 ) M sun yr -1 from sensitive X-ray non-detections, as well as a similar limit from radio data, which depends, however, on assumptions about microphysical parameters. We discuss our results in the context of single-degenerate models for SNe Ia and find that our observations modestly disfavor symbiotic progenitor models involving a red giant donor, but cannot constrain systems accreting from main-sequence or sub-giant stars, including the popular supersoft channel. In view of the proximity of PTF11kly and the sensitivity of our prompt observations, we would have to wait for a long time (a decade or longer) in order to more meaningfully probe the circumstellar matter of SNe Ia.

Optical and electrochromic properties of Sn:WO3 cermets

International Nuclear Information System (INIS)

Ashrit, P.V.; Bader, G.; Girouard, F.E.; Truong, V.V.

1989-01-01

This paper discusses optical and electrochromic properties of Sn:WO 3 cermets deposited by alternate layer thermal deposition. These cermets exhibit electrical and optical behavior in the as deposited state. The inclusion of Sn in the WO 3 matrix enhances the Electrical conductivity of the system and renders them fairly transparent in the visible region. The electrochromic behavior of such systems is studied under both proton and Li + ion injection. The good conductivity and good transmission combined with good electrochromic characteristics of these systems indicate the possibility of utilizing this type of cermet for the dual role of transparent conductor (TC) and electrochromic (EC) layer

Sn whiskers removed by energy photo flashing

International Nuclear Information System (INIS)

Jiang, N.; Yang, M.; Novak, J.; Igor, P.; Osterman, M.

2012-01-01

Highlights: ► Sn whiskers were sintered by intense light flashing (Photosintering). ► Photosintering can effectively eliminate Sn whiskers. ► Photosintering would not damage electronic devices. ► Photosintering is a very promising approach to improve Sn-based electronic surface termination. - Abstract: Sn whiskers have been known to be the major issue resulting in electronic circuit shorts. In this study, we present a novel energy photo flashing approach (photosintering) to shorten and eliminate Sn whiskers. It has been found that photosintering is very effective to modify and remove Sn whiskers; only a sub-millisecond duration photosintering can amazingly get rid of over 90 vol.% of Sn whiskers. Moreover, this photosintering approach has also been proved to cause no damages to electronic devices, suggesting it is a potentially promising way to improve Sn-based electronic surface termination.

Improving cycle stability of SnS anode for sodium-ion batteries by limiting Sn agglomeration

Science.gov (United States)

Wang, Wenhui; Shi, Liang; Lan, Danni; Li, Quan

2018-02-01

Flower-like SnS nanostructures are obtained by a simple solvothermal method for anode applications in Na-ion batteries. We show experimental evidence of progressive Sn agglomeration and crystalline Na2S enrichment at the end of de-sodiation process of the SnS electrode, both of which contribute to the capacity decay of the electrode upon repeated cycles. By replacing the commonly adopted acetylene black conductive additive with multi-wall carbon nanotubes (MWCNT), the cycle stability of the SnS electrode is largely improved, which correlates well with the observed suppression of both Sn agglomeration and Na2S enrichment at the end of de-sodiation cycle. A full cell is assembled with the SnS/MWCNT anode and the P2-Na2/3Ni1/3Mn1/2Ti1/6O2 cathode. An initial energy density of 262 Wh/kg (normalized to the total mass of cathode and anode) is demonstrated for the full cell, which retains 71% of the first discharge capacity after 40 cycles.

Phase diagrams of novel Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasi-ternary system following DTA and X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Barchiy, I.E.; Tatzkar, A.R. [Department of Chemistry, Uzhgorod National University, Pidgirna St., 46, Uzhgorod 88000 (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, Lviv 79010 (Ukraine); Plucinski, K., E-mail: kpluc2006@wp.pl [Electronics Department, Military University Technology, Warsaw, Kaliskiego 2, Warsaw 00-908 (Poland)

2016-06-25

Phase relation in the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasiternary system were studied by the DTA and X-ray diffraction in combination with mathematical modeling. The phase diagrams of the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2} and Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems, the perspective views of the phase interaction in the ternary system, the liquidus surface projection, the isothermal section at 423 K were built for the first time. The Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} system is of the invariant eutectic type and is characterized by the formation of limited solid solutions following initial ternary compounds. New complex compounds are not formed. - Highlights: • Two Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2},Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems were explored. • Invariant processes in the ternary system were determined. • New complex compounds were not observed in ternary system.

The improvement of gas-sensing properties of SnO2/zeolite-assembled composite

Science.gov (United States)

Sun, Yanhui; Wang, Jing; Li, Xiaogan; Du, Haiying; Huang, Qingpan

2018-05-01

SnO2-impregnated zeolite composites were used as gas-sensing materials to improve the sensitivity and selectivity of the metal oxide-based resistive-type gas sensors. Nanocrystalline MFI type zeolite (ZSM-5) was prepared by hydrothermal synthesis. Highly dispersive SnO2 nanoparticles were then successfully assembled on the surface of the ZSM-5 nanoparticles by using the impregnation methods. The SnO2 nanoparticles are nearly spherical with the particle size of 10 nm. An enhanced formaldehyde sensing of as-synthesized SnO2-ZSM-5-based sensor was observed whereas a suppression on the sensor response to other volatile organic vapors (VOCs) such as acetone, ethanol, and methanol was noticed. The possible reasons for this contrary observation were proposed to be related to the amount of the produced water vapor during the sensing reactions assisted by the ZSM-5 nanoparticles. This provides a possible new strategy to improve the selectivity of the gas sensors. The effect of the humidity on the sensor response to formaldehyde was investigated and it was found the higher humidity would decrease the sensor response. A coating layer of the ZSM-5 nanoparticles on top of the SnO2-ZSM-5-sensing film was thus applied to further improve the sensitivity and selectivity of the sensor through the strong adsorption ability to polar gases and the "filtering effect" by the pores of ZSM-5.

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

Science.gov (United States)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

2014-02-20

SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale

Directory of Open Access Journals (Sweden)

Jianmei Wang

2017-09-01

Full Text Available To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view.

Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale.

Science.gov (United States)

Wang, Jianmei; Xia, Quanzhi; Ma, Yang; Meng, Fanning; Liang, Yinan; Li, Zhixiong

2017-09-25

To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view.

Electronic structure and isomer shifts of Sn halides

International Nuclear Information System (INIS)

Terra, J.; Guenzburger, D.

1988-01-01

The all-electron first-principles Discrete Variational method was employed to study the electronic structure of SnF 4 , SnCl 4 , SnBr 4 and SnI 4 . Values of the electronic density at the Sn nucleus were derived and related to 119 Sn Isomer Shifts to obtain the nuclear constant Δ 2 >. Differences in values of ρ(o) area discussed in terms of the chemical bonding between Sn and halogen atoms. (author) [pt

195Pt and 119Sn Knight shifts of U3Pt3Sn4

International Nuclear Information System (INIS)

Kojima, K.; Takabatake, T.; Harada, A.; Hihara, T.

1995-01-01

The 195 Pt and 119 Sn Knight shifts in U 3 Pt 3 Sn 4 have been measured in the temperature range 4.2-298K. They exhibit Curie-Weiss like behaviors above about 50K and remain constant below about 10K. This suggests that the deviation of χ(T) from the modified Curie-Weiss law is an intrinsic property of U 3 Pt 3 Sn 4 . ((orig.))

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

Science.gov (United States)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Dark Matter Ignition of Type Ia Supernovae.

Science.gov (United States)

Bramante, Joseph

2015-10-02

Recent studies of low redshift type Ia supernovae (SN Ia) indicate that half explode from less than Chandrasekhar mass white dwarfs, implying ignition must proceed from something besides the canonical criticality of Chandrasekhar mass SN Ia progenitors. We show that 1-100 PeV mass asymmetric dark matter, with imminently detectable nucleon scattering interactions, can accumulate to the point of self-gravitation in a white dwarf and collapse, shedding gravitational potential energy by scattering off nuclei, thereby heating the white dwarf and igniting the flame front that precedes SN Ia. We combine data on SN Ia masses with data on the ages of SN Ia-adjacent stars. This combination reveals a 2.8σ inverse correlation between SN Ia masses and ignition ages, which could result from increased capture of dark matter in 1.4 vs 1.1 solar mass white dwarfs. Future studies of SN Ia in galactic centers will provide additional tests of dark-matter-induced type Ia ignition. Remarkably, both bosonic and fermionic SN Ia-igniting dark matter also resolve the missing pulsar problem by forming black holes in ≳10  Myr old pulsars at the center of the Milky Way.

Fluid-sensitive nanoscale switching with quantum levitation controlled by α -Sn/β -Sn phase transition

Science.gov (United States)

Boström, Mathias; Dou, Maofeng; Malyi, Oleksandr I.; Parashar, Prachi; Parsons, Drew F.; Brevik, Iver; Persson, Clas

2018-03-01

We analyze the Lifshitz pressure between silica and tin separated by a liquid mixture of bromobenzene and chlorobenzene. We show that the phase transition from semimetallic α -Sn to metallic β -Sn can switch Lifshitz forces from repulsive to attractive. This effect is caused by the difference in dielectric functions of α -Sn and β -Sn , giving both attractive and repulsive contributions to the total Lifshitz pressure in different frequency regions controlled by the composition of the intervening liquid mixture. In this way, one may be able to produce phase-transition-controlled quantum levitation in a liquid medium.

Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study

Science.gov (United States)

Gurieva, Galina; Valle Rios, Laura Elisa; Franz, Alexandra; Whitfield, Pamela; Schorr, Susan

2018-04-01

This work is an experimental study of intrinsic point defects in off-stoichiometric kesterite type CZTSe by means of neutron powder diffraction. We revealed the existence of copper vacancies (VCu), various cation anti site defects (CuZn, ZnCu, ZnSn, SnZn, and CuZn), as well as interstitials (Cui, Zni) in a wide range of off-stoichiometric polycrystalline powder samples synthesized by the solid state reaction. The results show that the point defects present in off-stoichiometric CZTSe agree with the off-stoichiometry type model, assuming certain cation substitutions accounting for charge balance. In addition to the known off-stoichiometry types A-H, new types (I-L) have been introduced. For the very first time, a correlation between the chemical composition of the CZTSe kesterite type phase and the occurring intrinsic point defects is presented. In addition to the off-stoichiometry type specific defects, the Cu/Zn disorder is always present in the CZTSe phase. In Cu-poor/Zn-rich CZTSe, a composition considered as the one that delivers the best photovoltaic performance, mainly copper vacancies, ZnCu and ZnSn anti sites are present. Also, this compositional region shows the lowest degree of Cu/Zn disorder.

α-Sn and β-Sn precipitates in annealed epitaxial Si_0.95Sn_0.05

DEFF Research Database (Denmark)

Fyhn, M.F.; Chevallier, J.; Larsen, A.N.

1999-01-01

-Sn and beta-Sn crystallites. The presence of alpha-Sn at temperatures far above the bulk alpha beta transition temperature is explained by interface and pressure effects; the latter is likely to be due to the difference in thermal expansion of the precipitates and the matrix.......-temperature molecular-beam epitaxy on Si (001) and relaxed Si1-xGex substrates. Two different phases of solid Sn were identified in the annealed layers: the semiconductor phase, alpha-Sn, and the metallic phase beta-Sn The precipitates were found to consist of either only beta-Sn or to contain crystallites of both...... solid Sn phases. The orientations, the sizes and the relative number densities of the alpha-Sn and beta-Sn crystallites were investigated. in situ heating and cooling experiments were performed in the transmission electron microscope to study the melting and solidification characteristics of the alpha...

SnTe field effect transistors and the anomalous electrical response of structural phase transition

International Nuclear Information System (INIS)

Li, Haitao; Zhu, Hao; Yuan, Hui; Li, Qiliang; You, Lin; Kopanski, Joseph J.; Richter, Curt A.; Zhao, Erhai

2014-01-01

SnTe is a conventional thermoelectric material and has been newly found to be a topological crystalline insulator. In this work, back-gate SnTe field-effect transistors have been fabricated and fully characterized. The devices exhibit n-type transistor behaviors with excellent current-voltage characteristics and large on/off ratio (>10 6 ). The device threshold voltage, conductance, mobility, and subthreshold swing have been studied and compared at different temperatures. It is found that the subthreshold swings as a function of temperature have an apparent response to the SnTe phase transition between cubic and rhombohedral structures at 110 K. The abnormal and rapid increase in subthreshold swing around the phase transition temperature may be due to the soft phonon/structure change which causes the large increase in SnTe dielectric constant. Such an interesting and remarkable electrical response to phase transition at different temperatures makes the small SnTe transistor attractive for various electronic devices.

Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

International Nuclear Information System (INIS)

Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

2006-01-01

Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation

International Nuclear Information System (INIS)

Crisafulli, Rudy

2013-01-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H 2 PtCl 6 .6H 2 O, SnCl 2 .2H 2 O and CuCl 2 .2H 2 O as metal sources, NaBH 4 and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of PtSnCu/C (50:40:10) AR/ED > PtSnCu/C (50:10:40) BR/CD. PtSn/C (50:50) BR/CD, PtSnCu/C (50:10:40) BR/CD, PtSnCu/C (50:40:10) AR/CD electrocatalysts and Pt/C BASF, PtSn/C (75:25) BASF commercial electrocatalysts were tested in single Direct Ethanol Fuel Cell. The results showed the following performance for ethanol electro-oxidation: PtSn/C (50:50) BR/CD > PtSnCu/C (50:40:10) AR/CD > PtSnCu/C > PtSn/C (75:25) BASF > PtSnCu/C (50:10:40) BR/CD > Pt/C BASF. (author)

Anomalous temperature behavior of Sn impurities

International Nuclear Information System (INIS)

Haskel, D.; Shechter, H.; Stern, E.A.; Newville, M.; Yacoby, Y.

1993-01-01

Sn impurities in Pb and Ag hosts have been investigated by Moessbauer effect and in Pb by x-ray-absorption fine-structure (XAFS) studies. The Sn atoms are dissolved up to at least 2 at. % in Pb and up to at least 8 at. % in Ag for the temperature ranges investigated. The concentration limit for Sn-Sn interactions is 1 at. % for Pb and 2 at. % for Ag as determined experimentally by lowering the Sn concentration until no appreciable change occurs in the Moessbauer effect. XAFS measurements verify that the Sn impurities in Pb are dissolved and predominantly at substitutional sites. For both hosts the temperature dependence of the spectral intensities of isolated Sn impurities below a temperature T 0 is as expected for vibrating about a lattice site. Above T 0 the Moessbauer spectral intensity exhibits a greatly increased rate of drop-off with temperature without appreciable broadening. This drop-off is too steep to be explained by ordinary anharmonic effects and can be explained by a liquidlike rapid hopping of the Sn, localized about a lattice site. Higher-entropy-density regions of radii somewhat more than an atomic spacing surround such impurities, and can act as nucleation sites for three-dimensional melting

Supernova 2008J: early time observations of a heavily reddened SN 2002ic-like transient

DEFF Research Database (Denmark)

Taddia, F.; Stritzinger, M. D.; Phillips, M. M.

2012-01-01

Aims: We provide additional observational evidence that some Type Ia supernovae (SNe Ia) show signatures of circumstellar interaction (CSI) with hydrogen-rich material. Methods: Early phase optical and near-infrared (NIR) light curves and spectroscopy of SN 2008J obtained by the Carnegie Supernova...... that their CSI emissions are similarly robust. The high-resolution spectrum reveals narrow emission lines produced from un-shocked gas characterized by a wind velocity of ~50 km s-1. We conclude that SN 2008J best matches an explosion of a SN Ia that interacts with its CSM....

Molecular Mimicry Regulates ABA Signaling by SnRK2 Kinases and PP2C Phosphatases

OpenAIRE

Soon, Fen-Fen; Ng, Ley-Moy; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Tan, M. H. Eileen; Suino-Powell, Kelly M.; He, Yuanzheng; Xu, Yong; Chalmers, Michael J.; Brunzelle, Joseph S.; Zhang, Huiming; Yang, Huaiyu; Jiang, Hualiang; Li, Jun

2011-01-01

Abscisic acid (ABA) is an essential hormone for plants to survive environmental stresses. At the center of the ABA signaling network is a subfamily of type 2C protein phosphatases (PP2Cs), which form exclusive interactions with ABA receptors and subfamily 2 Snfl-related kinase (SnRK2s). Here, we report a SnRK2-PP2C complex structure, which reveals marked similarity in PP2C recognition by SnRK2 and ABA receptors. In the complex, the kinase activation loop docks into the active site of PP2C, wh...

Spectroscopic Classification of SN 2018bgc (=ATLAS18nvs) as a Type Ia Supernova

Science.gov (United States)

Lin, Han; Wang, Xiaofeng; Xiang, Danfeng; Rui, Liming; Hu, Lei; Hu, Maokai; Zhang, Xinhan; Li, Xue; Zhang, Tianmeng; Zhang, Jujia

2018-05-01

We obtained an optical spectrum (range 385-855 nm) of SN 2018bgc(=ATLAS18nvs), discovered by ATLAS, on UT May 08.60 2018 with the 2.16-m telescope (+BFOSC) at Xinglong Station of National Astronomical Observatories of China (NAOC).

Spectroscopic classification of SN 2018bsn as a type Ia supernova before the maximum

Science.gov (United States)

Zhang, Jujia; Ye, Kai; Xu, Zhijian; Li, Wenxiong; Wang, Xiaofeng; Mo, Jun; Tan, Hanjie; Zhang, Tianmeng

2018-05-01

We obtained an optical spectrum (range 350-890 nm) of SN 2018bsn, discovered by the Tsinghua-NAOC Transient Survey (TNTS), on UT May 17.7 2018 with the 2.4 m telescope (LJT + YFOSC) at Lijiang Observatory of Yunnan Observatories (YNAO).

The ASAS-SN bright supernova catalogue - III. 2016

Science.gov (United States)

Holoien, T. W.-S.; Brown, J. S.; Stanek, K. Z.; Kochanek, C. S.; Shappee, B. J.; Prieto, J. L.; Dong, Subo; Brimacombe, J.; Bishop, D. W.; Bose, S.; Beacom, J. F.; Bersier, D.; Chen, Ping; Chomiuk, L.; Falco, E.; Godoy-Rivera, D.; Morrell, N.; Pojmanski, G.; Shields, J. V.; Strader, J.; Stritzinger, M. D.; Thompson, Todd A.; Woźniak, P. R.; Bock, G.; Cacella, P.; Conseil, E.; Cruz, I.; Fernandez, J. M.; Kiyota, S.; Koff, R. A.; Krannich, G.; Marples, P.; Masi, G.; Monard, L. A. G.; Nicholls, B.; Nicolas, J.; Post, R. S.; Stone, G.; Wiethoff, W. S.

2017-11-01

This catalogue summarizes information for all supernovae discovered by the All-Sky Automated Survey for SuperNovae (ASAS-SN) and all other bright (mpeak ≤ 17), spectroscopically confirmed supernovae discovered in 2016. We then gather the near-infrared through ultraviolet magnitudes of all host galaxies and the offsets of the supernovae from the centres of their hosts from public data bases. We illustrate the results using a sample that now totals 668 supernovae discovered since 2014 May 1, including the supernovae from our previous catalogues, with type distributions closely matching those of the ideal magnitude limited sample from Li et al. This is the third of a series of yearly papers on bright supernovae and their hosts from the ASAS-SN team.

Synthesis, Characterization, and Photocatalytic Activity of Zn-Doped SnO2/Zn2SnO4 Coupled Nanocomposites

Directory of Open Access Journals (Sweden)

Tiekun Jia

2014-01-01

Full Text Available Zn-doped SnO2/Zn2SnO4 nanocomposites were prepared via a two-step hydrothermal synthesis method. The as-prepared samples were characterized by X-ray diffraction (XRD, field-emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, UV-vis diffuse reflection spectroscopy, and adsorption-desorption isotherms. The results of FESEM and TEM showed that the as-prepared Zn-doped SnO2/Zn2SnO4 nanocomposites are composed of numerous nanoparticles with the size ranging from 20 nm to 50 nm. The specific surface area of the as-prepared Zn-doped SnO2/Zn2SnO4 nanocomposites is estimated to be 71.53 m2/g by the Brunauer-Emmett-Teller (BET method. The photocatalytic activity was evaluated by the degradation of methylene blue (MB, and the resulting showed that Zn-doped SnO2/Zn2SnO4 nanocomposites exhibited excellent photocatalytic activity due to their higher specific surface area and surface charge carrier transfer.

The recruitment of the U5 snRNP to nascent transcripts requires internal loop 1 of U5 snRNA.

Science.gov (United States)

Kim, Rebecca; Paschedag, Joshua; Novikova, Natalya; Bellini, Michel

2012-12-01

In this study, we take advantage of the high spatial resolution offered by the nucleus and lampbrush chromosomes of the amphibian oocyte to investigate the mechanisms that regulate the intranuclear trafficking of the U5 snRNP and its recruitment to nascent transcripts. We monitor the fate of newly assembled fluorescent U5 snRNP in Xenopus oocytes depleted of U4 and/or U6 snRNAs and demonstrate that the U4/U6.U5 tri-snRNP is not required for the association of U5 snRNP with Cajal bodies, splicing speckles, and nascent transcripts. In addition, using a mutational analysis, we show that a non-functional U5 snRNP can associate with nascent transcripts, and we further characterize internal loop structure 1 of U5 snRNA as a critical element for licensing U5 snRNP to target both nascent transcripts and splicing speckles. Collectively, our data support the model where the recruitment of snRNPs onto pre-mRNAs is independent of spliceosome assembly and suggest that U5 snRNP may promote the association of the U4/U6.U5 tri-snRNP with nascent transcripts.

Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

International Nuclear Information System (INIS)

Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

2013-01-01

Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C