WorldWideScience

Sample records for two-section semiconductor laser

  1. Semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Ito, K.; Shyuue, M.

    1982-09-25

    A distributed feedback semiconductor laser is proposed which generates several beams with equal wavelengths in different directions. For this purpose, 1 millimeter grooves are cut into the surface of an n-type conductance GaAs plate in three different directions; these grooves form a diffraction grating. The center of this plate has no grooves and is bombarded by an He/Ne laser beam. The diffraction gratings provide resonance properties and generate laser beams with wavelengths of 8850, 9000 and 9200 angstroms.

  2. Time Domain Dynamic Analysis of 1550nm Monolithic Two Sections Mode Locked MQW Laser

    OpenAIRE

    DUMAN, Çağlar; ÇAKMAK, Bülent

    2015-01-01

    In this study, time domain dynamic model of a mode locked two sections DBR laser was obtained. Sort duration and high power optical pulse generation from a semiconductor laser was examined by using obtained model. For this aim, while one of the laser sections was thought as reverse biased and so acted as a saturable absorber, other section thought as forward biased with a DC current and so acted as a gain section. A semiconductor laser biased this way can produce mode locked pulses by suitabl...

  3. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  4. Semiconductor laser. Halbleiterlaser

    Energy Technology Data Exchange (ETDEWEB)

    Wuenstel, K.; Gohla, B.; Tegude, F.; Luz, G.; Hildebrand, O.

    1987-08-27

    A highly modulable semiconductor laser and a process for its manufacture are described. The semiconductor laser has a substrate, a stack of semiconductor layers and electrical contacts. To reduce the capacity, the width of the stack of semiconductor layers is reduced at the sides by anisotropic etching. The electrical contacts are situated on the same side of the substrate and are applied in the same stage of the process. The semiconductor laser is suitable for monolithic integration in other components.

  5. Applications of Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    LI Te; SUN Yan-fang; NING Yong-qiang; WANG Li-jun

    2005-01-01

    An overview of the applications of semiconductor lasers is presented. Diode lasers are widely used today,and the most prevalent use of the laser is probably in CD and DVD drives for computers and audio/video media systems. Semiconductor lasers are also used in many other fields ranging from optical fiber communications to display,medicine and pumping sources.

  6. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  7. Slow Light Semiconductor Laser

    Science.gov (United States)

    2015-02-02

    we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. The views, opinions and/or findings...we demonstrate a semiconductor laser with a spectral linewidth of 18 kHz in the telecom band around 1:55um. Further, the large intracavity field...hybrid Si/III- V platforms Abstract The semiconductor laser is the principal light source powering the world-wide optical fiber network . Ever

  8. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Masaru, K.

    1984-04-20

    A semiconductor laser with enhanced characteristics is patented in which bleaching coatings are generated on the outcoupling mirrors by sputtering alternating coating layers made from A1203 and A10, with high and low indices of refraction.

  9. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Wavelength Tuning in the Two-Section Distributed Bragg Reflector Laser Fabricatedby Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The two-section tunable ridge waveguide distributed Bragg reflector (DBR) lasers fabricated by strained In xGa1-xAsyP1-y The threshold current of the laser is 51mA. The tunable range of the laser is 3.2nm and the side mode suppression ratio (SMSR) is more than 38dB.

  12. Wavelength Tuning in the Two-Section Distributed Bragg Reflector Laser Fabricatedby Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    Lu Yu; Zhang Jing; Wang Wei; Zhu Hong-liang; Zhou Fan; Wang Bao-Jun; Zhang Jing-yuan; Zhao Ling-juan

    2003-01-01

    The two-section tunable ridge waveguide distributed Bragg reflector (DBR) lasers fabricated by strained InxGa1-xAsyP1-y. The threshold current of the laser is 51mA. The tunable range of the laser is 3.2nm and the side mode suppression ratio (SMSR) is more 38dB.

  13. Semiconductor nanowire lasers

    Science.gov (United States)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  14. Tunable Infrared Semiconductor Lasers

    Science.gov (United States)

    2013-12-20

    Lett. 81, 406-408 (2002). [20] M. Ito and T. Kimura, “Oscillation properties of AlGaAs DH Lasrs with an external grating,” IEEE J. Quant. Elec- tron...tuning range has been demonstrated on a large area index-coupled, optically pumped mid-infrared type-II semiconductor distributed feedback (DFB) laser...lithography (IL) technique is used to pattern this chirped grating with two coherent spherical waves. A new grating fabrication optical arrangement

  15. Electrically tunable terahertz quantum cascade lasers based on a two-sections interdigitated distributed feedback cavity

    Energy Technology Data Exchange (ETDEWEB)

    Turčinková, Dana; Scalari, Giacomo; Beck, Mattias; Faist, Jérôme [ETH Zurich, Institute for Quantum Electronics, Auguste-Piccard-Hof 1, 8093 Zurich (Switzerland); Amanti, Maria Ines [ETH Zurich, Institute for Quantum Electronics, Auguste-Piccard-Hof 1, 8093 Zurich (Switzerland); Univ. Paris Diderot, Lab. Matererk iaux et Phenomenes Quantiques, F-75205 Paris (France)

    2015-03-30

    The continuous electrical tuning of a single-mode terahertz quantum cascade laser operating at a frequency of 3 THz is demonstrated. The devices are based on a two-section interdigitated third-order distributed feedback cavity. The lasers can be tuned of about 4 GHz at a constant optical output power of 0.7 mW with a good far-field pattern.

  16. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Khiroiti, S.

    1984-05-20

    An improved method is patented for increasing the service life of semiconductor lasers which does not hinder their characteristics, by applying a protective film to the end planes of the optical resonator of the laser. It is recommended that a mixture of an A1203 dielectric and an inert element such as argon be used for a GaAs, GaA1As laser as the protective film. The radii of gallium and arsenic atoms are equal to 1.24 and 1.25 angstroms, respectively. The radii of A1, O and Si atoms which make up the protective film are equal to 1.43, .61 and 1.17 angstroms, respectively. The radius of the argon atoms in the protective film, which is equal to 1.91 angstroms) is high compared to the atoms noted above. As a result, the movement of the gallium and arsenic atoms, which causes a drop in later characteristics during operation, is made more difficult.

  17. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  18. A variable frequency semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Tosikhiro, F.; Khiromoto, S.

    1984-03-27

    A variable frequency, power stabilized semiconductor laser is patented. This laser includes, in addition to an active layer, a photoconducting channel layer and a layer made from a material manifesting a Pockels effect. A voltage is injected between these two layers to vary the emission frequency. The laser pumping voltage is stabilized.

  19. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  20. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  1. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  2. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  3. Electron beam pumped semiconductor laser

    Science.gov (United States)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  4. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

    DEFF Research Database (Denmark)

    Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

    2010-01-01

    This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser g...

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  6. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  7. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.;

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  8. Pulsed pumping of semiconductor disk lasers.

    Science.gov (United States)

    Hempler, Nils; Hopkins, John-Mark; Kemp, Alan J; Schulz, Nico; Rattunde, Marcel; Wagner, Joachim; Dawson, Martin D; Burns, David

    2007-03-19

    Efficient operation of semiconductor disk lasers is demonstrated using uncooled and inexpensive 905nm high-power pulsed semiconductor pump lasers. Laser emission, with a peak power of 1.7W, is obtained from a 2.3mum semiconductor disk laser. This is seven times the power achieved under continuous pumping. Analysis of the time-dependent spectral characteristics of the laser demonstrate that significant device heating occurs over the 100-200ns duration of the pumping pulse - finite element modelling of the thermal processes is undertaken in support of these data. Spectral narrowing to below 0.8nm is obtained by using an intra-cavity birefringent filter.

  9. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui

    2014-01-01

    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  10. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  11. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    Science.gov (United States)

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  12. Integrated optics approach for advanced semiconductor lasers

    Science.gov (United States)

    Suematsu, Yasuharu; Arai, Shigehisa

    1987-11-01

    Recent advances in the field of semiconductor integrated optics are reviewed from the point of view of monolithic integration of semiconductor lasers and other optical components and/or devices. Emphasis is placed on dynamic-single-mode (DSM) lasers, such as DFB and DBR lasers, intended for highly stable single-wavelength light sources for such monolithic integration. The realization of high-performance DSM lasers and the fabrication techniques of monolithically integrated optical devices and circuits are briefly reviewed. A variety of potential applications is discussed.

  13. Vertical external cavity surface emitting semiconductor lasers

    CERN Document Server

    Holm, M

    2001-01-01

    Active stabilisation showed a relative locked linewidth of approx 3 kHz. Coarse tuning over 7 nm was achieved using a 3-plate birefingent filter plate while fine-tuning using cavity length change allowed tuning over 250 MHz. Vertical external cavity semiconductor lasers have emerged as an interesting technology based on current vertical cavity semiconductor laser knowledge. High power output into a single transverse mode has attracted companies requiring good fibre coupling for telecommunications systems. The structure comprises of a grown semiconductor Bragg reflector topped with a multiple quantum well gain region. This is then included in an external cavity. This device is then optically pumped to promote laser action. Theoretical modelling of AIGaAs based VECSEL structures was undertaken, showing the effect of device design on laser characteristics. A simple 3-mirror cavity was constructed to assess the static characteristics of the structure. Up to 153 mW of output power was achieved in a single transver...

  14. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  15. A compact differential laser Doppler velocimeter using a semiconductor laser

    NARCIS (Netherlands)

    Jentink, H.W.; Beurden, van J.A.J.; Helsdingen, M.A.; Mul, de F.F.M.; Suichies, H.E.; Aarnoudse, J.G.; Greve, J.

    1987-01-01

    A small differential laser Doppler velocimeter which uses a semiconductor laser and a small number of optical components is described. In this device the light from the laser diode is split into coherent beams by means of a diffraction grating. The two first-order beams are crossed in a probe volume

  16. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  17. Bidirectional chaos communication between two outer semiconductor lasers coupled mutually with a central semiconductor laser.

    Science.gov (United States)

    Li, Ping; Wu, Jia-Gui; Wu, Zheng-Mao; Lin, Xiao-Dong; Deng, Dao; Liu, Yu-Ran; Xia, Guang-Qiong

    2011-11-21

    Based on a linear chain composed of a central semiconductor laser and two outer semiconductor lasers, chaos synchronization and bidirectional communication between two outer lasers have been investigated under the case that the central laser and the two outer lasers are coupled mutually, whereas there exists no coupling between the two outer lasers. The simulation results show that high-quality and stable isochronal synchronization between the two outer lasers can be achieved, while the cross-correlation coefficients between the two outer lasers and the central laser are very low under proper operation condition. Based on the high performance chaos synchronization between the two outer lasers, message bidirectional transmissions of bit rates up to 20 Gbit/s can be realized through adopting a novel decoding scheme which is different from that based on chaos pass filtering effect. Furthermore, the security of bidirectional communication is also analyzed.

  18. Laser cooling in semiconductors (Conference Presentation)

    Science.gov (United States)

    Zhang, Jun

    2017-06-01

    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  19. Method and system for powering and cooling semiconductor lasers

    Science.gov (United States)

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  20. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2......+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor. Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser....

  1. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio...... in the optical field causes spatial hole-burning and thus filamentation. To reduce filamentation we propose a new, relatively simple design based on inhomogeneous pumping in which the injected current has a gradual transverse profile. We confirm the improved laser performance theoretically and experimentally...

  2. A semiconductor laser device employing optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Tosikhiro, F.; Akimoto, S.; Katsuyuki, F.; Kun, I.

    1984-06-22

    A method is proposed for obtaining stable lasing parameters using a single longitudinal mode with reduced noise. This method involves reflecting a portion of the laser emission from the semiconductor laser back into the active region. An angular reflector with an angle other than a right angle is used. The laser emission which exits this end of the resonator is collimated by a lens into a parallel beam, which, when reflected off the angular reflector, strikes the lens at specific angles, and is focused at two points on this same end. This makes it possible to obtain single longitudinal mode lasing with significant submodal structure attenuation and a total absence of noise.

  3. Semiconductor laser applications in rheumatology

    Science.gov (United States)

    Pascu, Mihail-Lucian; Suteanu, S.

    1996-01-01

    Two types of laser diode (LD) based equipment for rheumatology are introduced. The first is a portable device which contains single LD emitting at 890 nm laser pulses (time full width 100 nsec) of reprate tunable within (0.5 - 1.5) kHz; the laser beam average power is 0.7 mW at 1 kHz reprate. The second is computer controlled, contains one HeNe laser and 5 LD allowing 6 modes of patient irradiation (placebo effect evaluation included). HeNe laser works in cw at 632.8 nm; the LD works each as described for the portable equipment. HeNe and LD beams are superposed so that HeNe laser spot in the irradiation plane has a 60 mm diameter and the LD spots covers a 50 mm diameter disc centered on the HeNe laser spot. Clinical applications using the second type of equipment are reported; 1287 patients were treated between October 1991 and October 1994. Female/male ratio was 4:1 and their age distribution was between 18 and 85 years. The average number of exposures was 10 and the mean exposure time was 7 minutes. Studies were made on the treatment of rheumatoid arthritis, seronegative arthritis, degenerative joint diseases, abarticular rheumatism, osteoporosis pain and pains and edema after fractures.

  4. Visible-wavelength semiconductor lasers and arrays

    Science.gov (United States)

    Schneider, Jr., Richard P.; Crawford, Mary H.

    1996-01-01

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  5. Spectral Feature Analysis of Semiconductor Thin Disk Laser

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay...

  6. Optical injection in semiconductor ring lasers

    CERN Document Server

    Coomans, W; Van der Sande, G; Gelens, L; Danckaert, J; 10.1103/PhysRevA.81.033802

    2011-01-01

    We theoretically investigate optical injection in semiconductor ring lasers and disclose several dynamical regimes. Through numerical simulations and bifurcation continuation, two separate parameter regions in which two different injection-locked solutions coexist are revealed, in addition to a region in which a frequency-locked limit cycle coexists with an injection-locked solution. Finally, an antiphase chaotic regime without the involvement of any carrier dynamics is revealed. Parallels are drawn with the onset of chaos in the periodically forced Duffing oscillator.

  7. Coherent optical pumping of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Pfister, M.; Dupertuis, M.A. [Inst. de Micro- et Optoelectronique, Lausanne (Switzerland). Dept. de Physique

    1995-01-01

    The influence of coherent optical pumping in semiconductor lasers is investigated theoretically. In particular the mathematical conditions under which an optically pumped system behaves like an electrically (incoherently) pumped system are derived. The authors show that it is practically impossible to reach the interesting regime where coherent effects are important because of the inherent constraints to absorb photons at the pump frequency and to reach threshold gain at the lasing frequency. The effects of changing the temperature and of reduced dimensionality are discussed.

  8. Semiconductor lasers in rheumatological treatment

    Science.gov (United States)

    Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

    1995-03-01

    A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

  9. Optical complexity in external cavity semiconductor laser

    Science.gov (United States)

    Rondoni, Lamberto; Ariffin, M. R. K.; Varatharajoo, Renuganth; Mukherjee, Sayan; Palit, Sanjay K.; Banerjee, Santo

    2017-03-01

    In this article, the window based complexity and output modulation of a time delayed chaotic semiconductor laser (SL) model has been investigated. The window based optical complexity (OC), is measured by introducing the recurrence sample entropy (SampEn). The analysis has been done without and in the presence of external noise. The significant changes in the dynamics can be observed under induced noise with weak strength. It has also been found that there is a strong positive correlation between the output power and the complexity of the system with various sets of parameters. The laser intensity, as well as the OC can be increased with the incremental noise strength and the associated system parameters. Thus, optical complexity quantifies the system dynamics and its instabilities, since is strongly correlated with the laser outputs. This analysis can be applied to measure the laser instabilities and modulation of output power.

  10. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  11. Semiconductor disk laser pumped Cr2+:Znse lasers.

    Science.gov (United States)

    Hempler, Nils; Hopkins, John-Mark; Rösener, Benno; Rattunde, Marcel; Wagner, Joachim; Fedorov, Vladimir V; Moskalev, Igor S; Mirov, Sergey B; Burns, David

    2009-09-28

    A new flexible pump source, the optically-pumped semiconductor disk laser (SDL), for the Cr(2+):ZnSe laser is reported. The SDL provides up to 6W output power at a free running central wavelength of 1.98 microm. The Cr(2+):ZnSe laser operated at an output power of 1.8W and a slope efficiency of approximately 50% with respect to absorbed pump power whilst maintaining a low output intensity noise figure of <0.14% RMS. The system required no optical isolation even under the situation of significant optical feedback.

  12. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  13. Self-optimizing femtosecond semiconductor laser.

    Science.gov (United States)

    Döpke, Benjamin; Pilny, Rouven H; Brenner, Carsten; Klehr, Andreas; Erbert, Götz; Tränkle, Günther; Balzer, Jan C; Hofmann, Martin R

    2015-04-20

    A self-optimizing approach to intra-cavity spectral shaping of external cavity mode-locked semiconductor lasers using edge-emitting multi-section diodes is presented. An evolutionary algorithm generates spectrally resolved phase- and amplitude masks that lead to the utilization of a large part of the net gain spectrum for mode-locked operation. Using these masks as a spectral amplitude and phase filter, a bandwidth of the optical intensity spectrum of 3.7 THz is achieved and Fourier-limited pulses of 216 fs duration are generated after further external compression.

  14. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

    2017-01-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction......- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide...

  15. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    instead of the conventional fiber-lasers. Besides its advantage of lower cost, the relative intensity noise, which peaks around 1 MHz for fiber lasers, is inherently avoided by using a semiconductor light source. The impact of the line width increment on the SNR in the application of wind measurement has...... and demonstrated in this work. The challenge, aside from cost and compactness, is to ensure a long lifetime without regular maintenance, since the wind turbines are designed to last for 20 years. Finally, field test results of various measurement campaigns, designed to evaluate our lidar design, are presented here...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...

  16. Fabrication and Characterization of Edge-Emitting Semiconductor Lasers

    Science.gov (United States)

    Song, Junyeob

    The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. A fabricated device has 18W power and 11% conversion efficiency.

  17. Self-mode-locking semiconductor disk laser.

    Science.gov (United States)

    Gaafar, Mahmoud; Richter, Philipp; Keskin, Hakan; Möller, Christoph; Wichmann, Matthias; Stolz, Wolfgang; Rahimi-Iman, Arash; Koch, Martin

    2014-11-17

    The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode.

  18. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...

  19. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R J

    2011-01-03

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  20. Laser micromachining of semiconductors for photonics applications

    Science.gov (United States)

    Nantel, Marc; Yashkir, Yuri; Lee, Seong K.; Mugford, Chas; Hockley, Bernard S.

    2001-10-01

    For decades, precisely machining silicon has been critical for the success of the semiconductor industry. This has traditionally been done through wet chemical etching, but in the pursuit of integrating photonics devices on a single chip, other techniques are worth exploring. This quest opens up interest in finding a non-wet, non-contact, arbitrary-shape milling technique for silicon. In this paper, we present our latest work in the laser micromachining of silicon. A kilohertz-repetition-rate diode-pumped Nd:YLF laser (in infrared, green or ultraviolet modes) is focused on the surface of silicon wafers in a chlorine atmosphere for an enhanced magnitude and control of the etching rate. In the chlorine atmosphere, much less debris is deposited on the surface around the cut, sub-damage threshold machining is achieved for a better control of the etching depth, and etching rates ranging from 20-300,000 micron-cube/s have been measured. In particular, the use of an infrared laser beam is singled out, along with the advantages that it holds. Results of simulations highlight the particular characteristics of the various wavelength chosen for the machining.

  1. Turbulent chimeras in large semiconductor laser arrays

    CERN Document Server

    Shena, Joniald; Kovanis, Vassilios; Tsironis, George P

    2016-01-01

    Semiconductor laser arrays have been investigated experimentally and theoretically from the viewpoint of temporal and spatial coherence for the past forty years. In this work, we are focusing on a rather novel complex collective behavior, namely chimera states, where synchronized clusters of emitters coexist with unsynchronized ones. For the first time, we find such states exist in large diode arrays based on quantum well gain media with nearest-neighbor interactions. The crucial parameters are the evanescent coupling strength and the relative optical frequency detuning between the emitters of the array. By employing a recently proposed figure of merit for classifying chimera states, we provide quantitative and qualitative evidence for the observed dynamics. The corresponding chimeras are identified as turbulent according to the irregular temporal behavior of the classification measure. Such studies may be the springboard for designing next generation photonic emitters providing on demand diverse waveforms.

  2. Laser method for simulating the transient radiation effects of semiconductor

    Science.gov (United States)

    Li, Mo; Sun, Peng; Tang, Ge; Wang, Xiaofeng; Wang, Jianwei; Zhang, Jian

    2017-05-01

    In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.

  3. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    Science.gov (United States)

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-04-01

    Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

  4. Output spectrum of an unlocked optically driven semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Gallion, P.; Debarge, G.; Chabran, C.

    1986-05-01

    The output of an unlocked optically injected semiconductor laser exhibits a two-sided spectral distribution about its lasing frequency. The experimental results are explained by coupled phase and amplitude modulation and described by a rate-equation analysis.

  5. Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

    2014-01-01

    A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines .......A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines ....

  6. Picosecond Semiconductor Lasers For Characterizing High-Speed Image Shutters

    Science.gov (United States)

    Pagano, T. S.; Janson, F. J.; Yates, G. J.; Jaramillo, S. A.

    1986-01-01

    A portable system that utilizes solid state electronic timing circuits and a pulsed semiconductor laser for characterizing the optical gate sequence of high-speed image shutters, including microchannel-plate intensifier tubes (MCPTs), and silicon-intensified target vidicons (SITVs), is described and compared to earlier methods of characterization. Gate sequences obtained using the system and streak camera data of the semiconductor laser pulse are presented, with a brief discussion of the electronic delay timing and avalanche circuits used in the system.

  7. Management of gingival hyperpigmentation by semiconductor diode laser.

    Science.gov (United States)

    Gupta, Geeti

    2011-09-01

    Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile). Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO(2) laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  8. Continuously tunable wideband semiconductor fiber-ring laser

    Science.gov (United States)

    Mao, Xuefeng; Zhao, Shiwei; Yuan, Suzhen; Wang, Xiaofa; Zheng, Peichao

    2017-08-01

    We demonstrate a wideband tunable semiconductor fiber-ring laser that can be continuously tuned from 1498 nm to 1623 nm. The proposed laser uses a semiconductor optical amplifier (SOA) as a gain medium and a fiber Fabry-Perot tunable filter as a selective wavelength filter. The optimized drive current of the SOA and the output coupling ratio are obtained by experimental research. This laser has a simple configuration, low threshold, flat laser output power and high optical signal-to-noise ratio.

  9. Use of a semiconductor-diode laser in urology

    Science.gov (United States)

    Watson, Graham M.

    1994-05-01

    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  10. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

    1999-01-01

    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss...... are analyzed. The nonlinear transparent waveguide, i.e. an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical...

  11. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  12. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  13. Effects of the Facet Reflectivity of a Laser Diode on Fiber Bragg Grating Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    Honggang; Yu; Chang-Qing; Xu; Na; Li; Zhilin; Peng; Jacek; Wojcik; Peter; Mascher

    2003-01-01

    Effects of facet reflectivity of a laser diode on the performance of fiber Bragg grating semiconductor lasers are studied experimentally. Facet reflectivity of less than 10-4 is necessary to obtain stable oscillation wavelength.

  14. A Micro Blue-violet Laser by Frequency Doubling of Semiconductor Laser

    Institute of Scientific and Technical Information of China (English)

    周寿桓; 姜东升; 赵鸿

    2001-01-01

    In this paper, a micro blue-violet laser by frequency doubling of a semiconductor laser with a new nonlinear organometallic complex cadmium mercury thiocyanate crystal (CMTC) is reported. At room temperature, the blue-violet laser output of 11.8 mW at 404 nm and the conversion4efficiency of the second harmonic generation (SHG) of 0. 60% were obtained with a 1. 98 W, 808 nm semiconductor laser and a 4 mm crystal.

  15. Longitudinal analysis of semiconductor lasers with low reflectivity facets

    Energy Technology Data Exchange (ETDEWEB)

    Baets, R.; Lagasse, P.E.; Vande Capelle, J.P.

    1985-06-01

    An analysis is made of longitudinal effects in semiconductor lasers with low facet reflectivities. For this purpose, a self-consistent model is used based on the beam propagation method, which takes into account both the lateral and longitudinal dimension. The calculations show that longitudinal effects have a significant influence on the output fields in the laser.

  16. Theoretical analysis of pulse modulation of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Xu Baoxi; Zhan Yushu; Guo Siji

    1987-05-01

    Rate equations of Gaussian shape pulse modulated semiconductor lasers are solved by Runge--Kutta method, and the results are analyzed. The formulae for calculating the delay time, pulse width of laser pulse and maximum bit-rate of Gaussian shape pulse modulation are derived. The experimental results of modulation pattern effects are given.

  17. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le

    2010-01-01

    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  18. Overall optimization of high-speed semiconductor laser modules

    Institute of Scientific and Technical Information of China (English)

    LIU Yu; CHEN ShuoFu; WANG Xin; YUAN HaiQing; XIE Liang; ZHU NingHua

    2009-01-01

    Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packag-ing high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also im-proved significantly.

  19. Development of the power control system for semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs.

  20. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann;

    2004-01-01

    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework...... is based on a rate equation model obtained under weak coupling conditions. In both experiments and simulations, we find (achronal) synchronization of subnanosecond intensity fluctuations in concurrence with asymmetric physical roles between the lasers, even under symmetric operating conditions. We explore...

  1. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneratio...

  2. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    Directory of Open Access Journals (Sweden)

    Miguel Iglesias Olmedo

    2016-06-01

    Full Text Available We discuss the implications of using monolithically integrated semiconductor lasers in high capacity optical coherent links suitable for metro applications, where the integration capabilities of semiconductor lasers make them an attractive candidate to reduce transceiver cost. By investigating semiconductor laser frequency noise profiles we show that carrier induced frequency noise plays an important role in system performance. We point out that, when such lasers are employed, the commonly used laser linewidth fails to estimate system performance, and we propose an alternative figure of merit that we name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal.

  3. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy

    2009-01-01

    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  4. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  5. Rough scattering made by laser on metal and semiconductor surfaces

    Science.gov (United States)

    Shandybina, Galina D.

    1994-10-01

    Diffraction on metal and semiconductor surfaces during the process of laser irradiation is interesting for microelectronics, power optics and elements of measuring technology. We also present experimental data in changing dynamics of diffuse reflection of copper and bronze mirrors and silicon polished plates during laser irradiation. The impulse of laser radiation from neodymium glass lasts 4 ms. There could be seen the intense reversible increase of diffusion scattering and at the same time decrease of specular component of reflection during laser influence on metal and the appearance of precisely expressed unreturn scattering reflexes during irradiation of semiconductor plates long before the melting threshold. We conduct the quantitative measurements of target thermo-deformation, local deformation of heterogeneities and laser induced effects of the surface with the help of the impulse two-beam interferometry method by indirect measurements of temperature in laser radiation zone. We also established the connection between the dynamic change of scattering of metal and semiconductor with the nature of deformation, such as thermo-deformation of the whole irradiation zone, local deformation of heterogeneities of the surface and defects generated by laser. A physical model of laser induced surface roughness, confirmed by mathematical calculations in the thermoelastic approach, will be also discussed.

  6. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.;

    2009-01-01

    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid-...... spectrum, by appropriate choice of semiconductor material and single-pass laser wavelength.......In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  7. Reliability of Semiconductor Laser Packaging in Space Applications

    Science.gov (United States)

    Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

    2008-01-01

    A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

  8. Semiconductor lasers as integrated optical biosensors: sensitivity optimisation

    Energy Technology Data Exchange (ETDEWEB)

    Coote, J; Sweeney, S J [Advanced Technology Institute, University of Surrey, Guildford, UK GU2 7XH (United Kingdom)

    2007-07-15

    Semiconductor lasers contain both a light source and waveguide, rendering them suitable for adaptation to evanescent field biosensing. One-dimensional simulations using the beam propagation method have been carried out for planar semiconductor waveguide structures, with a view to maximising sensitivity of the effective index to changes in the refractive index and thickness of a film on the waveguide surface. Various structural parameters are investigated and it is found that thinning the upper cladding layer maximises the sensitivity. Implications for laser operation are considered, and an optimised structure is proposed. Surface layer index and thickness resolutions of 0.2 and 2nm are predicted.

  9. 80 nm tunable DBR-free semiconductor disk laser

    Science.gov (United States)

    Yang, Z.; Albrecht, A. R.; Cederberg, J. G.; Sheik-Bahae, M.

    2016-07-01

    We report a widely tunable optically pumped distributed Bragg reflector (DBR)-free semiconductor disk laser with 6 W continuous wave output power near 1055 nm when using a 2% output coupler. Using only high reflecting mirrors, the lasing wavelength is centered at 1034 nm and can be tuned up to a record 80 nm by using a birefringent filter. We attribute such wide tunability to the unique broad effective gain bandwidth of DBR-free semiconductor disk lasers achieved by eliminating the active mirror geometry.

  10. Pulse operation of semiconductor laser with nonlinear optical feedback

    Science.gov (United States)

    Guignard, Celine; Besnard, Pascal; Mihaescu, Adrian; MacDonald, K. F.; Pochon, Sebastien; Zheludev, Nikolay I.

    2004-09-01

    A semiconductor laser coupled to a gallium-made non linear mirror may exhibit pulse regime. In order to better understand this coupled cavity, stationary solutions and dynamics are described following the standard Lang and Kobayashi equations for a semiconductor laser submitted to nonlinear optical feedback. It is shown that the nonlinearity distorts the ellipse on which lied the stationary solutions, with a ``higher'' part corresponding to lower reflectivity and a ``lower'' part to higher reflectivity. Bifurcation diagrams and nonlinear analysis are presented while the conditions for pulsed operation are discussed.

  11. Active control of emission directionality of semiconductor microdisk lasers

    CERN Document Server

    Liew, Seng Fatt; Ge, Li; Solomon, Glenn S; Cao, Hui

    2014-01-01

    We demonstrate lasing mode selection in nearly circular semiconductor microdisks by shaping the spatial profile of optical pump. Despite of strong mode overlap, adaptive pumping suppresses all lasing modes except the targeted one. Due to slight deformation of the cavity shape and boundary roughness, each lasing mode has distinct emission pattern. By selecting different mode to be the dominant lasing mode, we can switch both the lasing frequency and the output direction. Such tunability by external pump after the laser is fabricated enhances the functionality of semiconductor microcavity lasers.

  12. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.;

    1999-01-01

    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

  13. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chamorovskiy, A Yu; Okhotnikov, Oleg G [Optoelectronics Research Center, Tampere University of Technology, Tampere (Finland)

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  14. Liquid Contact Luminescence from Semiconductor Laser Materials

    Science.gov (United States)

    1997-01-09

    Luminescence - Diagnostic As a diagnostic tool, LCL can provide much useful information about the quality of the epitaxial wafer prior to laser fabrication . In...diagnostic tool, LCL can provide a variety of useful information about the quality of the epitaxial wafer prior to laser fabrication . Temporal...the quality of the epitaxial laser wafer prior to laser fabrication . It is a quick, inexpensive, and non- destructive process that measures a variety

  15. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta

    2011-01-01

    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  16. Recent progress in picosecond pulse generation from semiconductor lasers

    Science.gov (United States)

    Auyeung, J. C.; Johnston, A. R.

    1982-01-01

    This paper reviews the recent progress in producing picosecond optical pulses from semiconductor laser diodes. The discussion concentrates on the mode-locking of a semiconductor laser diode in an external resonator. Transform-limited optical pulses ranging from several picoseconds to subpicosecond durations have been observed with active and passive mode-locking. Even though continuing research on the influence of impurities and defects on the mode-locking process is still needed, this technique has good promise for being utilized in fiber-optic communication systems. Alternative methods of direct electrical and optical excitation to produce ultrashort laser pulses are also described. They can generate pulses of similar widths to those obtained by mode-locking. The pulses generated will find applications in laser ranging and detector response measurement.

  17. Integrated semiconductor twin-microdisk laser under mutually optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  18. All semiconductor laser Doppler anemometer at 1.55 microm.

    Science.gov (United States)

    Hansen, René Skov; Pedersen, Christian

    2008-10-27

    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz.

  19. Semiconductor lasers vs LEDs in diagnostic and therapeutic medicine

    Science.gov (United States)

    Gryko, Lukasz; Zajac, Andrzej; Szymanska, Justyna; Blaszczak, Urszula; Palkowska, Anna; Kulesza, Ewa

    2016-12-01

    Semiconductor emitters are used in many areas of medicine, allowing for new methods of diagnosis, treatment and effective prevention of many diseases. The article presents selected areas of application of semiconductor sources in UVVIS- NIR range, where in recent years competition in semiconductor lasers and LEDs applications has been observed. Examples of applications of analyzed sources are indicated for LLLT, PDT and optical diagnostics using the procedure of color contrast. Selected results of LLLT research of the authors are presented that were obtained by means of the developed optoelectronic system for objectified irradiation and studies on the impact of low-energy laser and LED on lines of endothelial cells of umbilical vein. Usefulness of the spectrally tunable LED lighting system for diagnostic purposes is also demonstrated, also as an illuminator for surface applications - in procedure of variable color contrast of the illuminated object.

  20. Dispersion-managed semiconductor mode-locked ring laser.

    Science.gov (United States)

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard

    2003-08-01

    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  1. The effective index method and its application to semiconductor lasers

    DEFF Research Database (Denmark)

    Buus, Jens

    1982-01-01

    By the effective index method a two-dimensional field problem is transformed to a problem for a one-dimensional effective waveguide. This method is applied to semiconductor lasers having a gradual lateral variation in the complex permittivity. For the special case of a parabolic variation...

  2. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    solar cell component, laser materials and waveguides, in which defect in the materials would impair the performance of related device, such as emission... solar cell , and optically pumped lasers. Recent work also shows that perovskite single crystals possess low trap.-state density and high external...difference, the net laser cooling also need nearly unity external quantum efficiency (EQE) and absorption efficiency according to Sheik-Bahae/Epstein

  3. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mu m with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 mu m, both high-power edge emitters and low...

  4. A semiconductor laser system for the production of antihydrogen

    CERN Document Server

    Mullers, A; Kolbe, D; Diehl, T; Koglbauer, A; Sattler, M; Stappel, M; Steinborn, R; Walz, J; Gabrielse, G; Kalra, R; Kolthammer, W S; McConnell, R P; Richerme, P; Fitzakerley, D W; George, M C; Hessels, E A; Storry, C H; Weel, M; Grzonka, D; Oelert, W

    2012-01-01

    Laser-controlled charge exchange is a promising method for producing cold antihydrogen. Caesium atoms in Rydberg states collide with positrons and create positronium. These positronium atoms then interact with antiprotons, forming antihydrogen. Laser excitation of the caesium atoms is essential to increase the cross section of the charge-exchange collisions. This method was demonstrated in 2004 by the ATRAP collaboration by using an available copper vapour laser. For a second generation of charge-exchange experiments we have designed a new semiconductor laser system that features several improvements compared to the copper vapour laser. We describe this new laser system and show the results from the excitation of caesium atoms to Rydberg states within the strong magnetic fields in the ATRAP apparatus.

  5. Spectral Feature Analysis of Semiconductor Thin Disk Laser

    Institute of Scientific and Technical Information of China (English)

    HE Chun-feng; QIN Li; LI Jun; CHENG Li-wen; LIANG Xue-mei; NING Yong-qiang; WANG Li-jun

    2007-01-01

    The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer has no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effect becomes stronger, the chip will be not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer which is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs. This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etching equipment is also improved to control the surface unevenness to be within 50 nm.

  6. Bidirectional communication using delay coupled chaotic directly modulated semiconductor lasers

    Indian Academy of Sciences (India)

    Bindu M Krishna; Manu P John; V M Nandakumaran

    2010-02-01

    Chaotic synchronization of two directly modulated semiconductor lasers with negative delayed optoelectronic feedback is investigated and this scheme is found to be useful for efficient bidirectional communication between the lasers. A symmetric bidirectional coupling is identified as a suitable method for isochronal synchronization of such lasers. The optimum values of coupling and feedback strength that can provide maximum quality of synchronization are identified. This method is successfully employed for encoding/decoding both analog and digital messages. The importance of a symmetric coupling is demonstrated by studying the variation of decoding efficiency with respect to asymmetric coupling.

  7. Use of a semiconductor diode laser in urology

    Science.gov (United States)

    Watson, Graham M.; Anson, K.

    1993-05-01

    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  8. A method of manufacturing graduated substrates for a semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Yosikava, A.; Kadzumura, K.; Ota, K.; Sugino, T.; Vada, M.

    1984-01-12

    A method is patented for manufacturing a substrate with a graduated design for a semiconductor laser with a long service life and the necessary optical characteristics in a 1.5 micrometer spectral range. The laser is manufactured using a GaAs substrate with an active zone based on GaxAll-xAs. In order to achieve this goal, the active layer is equipped with a so called diffusion window whose diameter is chosen so that the threshold pumping current of the laser is less than 30 milliamperes.

  9. Single-SectionFabry-Perot Mode-Locked Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Weiguo Yang

    2011-01-01

    Full Text Available We present a review of the theoretical models and experimental verification of the single-section Fabry-Perot mode-locked semiconductor lasers based on multiple-spatial-mode (MSM coupling. The mode-locked operation at the repetition rates of 40 GHz and higher and the pulse width of a few picoseconds are confirmed by the intensity autocorrelation, the fast photo detection and RF spectrum, and the optical spectral interference measurement of ultrafast pulse. The spatial mode coupling theory of single-section Fabry-Perot mode-locked semiconductor lasers is also reviewed, and the results are compared with the experimental observations. The small signal modulation response of these lasers, which exhibits high-frequency responses well beyond the relaxation oscillation resonance limit, is also modeled theoretically, and the simulation is verified by the experimental measurements.

  10. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  11. Finite Element Simulation of the Optical Modes of Semiconductor Lasers

    CERN Document Server

    Pomplun, J; Schmidt, F; Schliwa, A; Bimberg, D; Pietrzak, A; Wenzel, H; Erbert, G; 10.1002/pssb.200945451

    2010-01-01

    In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavity surface emitting laser (VCSEL). We give the mathematical formulation of the different eigenvalue problems that arise for our examples and explain their numerical solution with the finite element method. Thereby, we also comment on the usage of transparent boundary conditions, which have to be applied to respect the exterior environment, e.g., the very large substrate and surrounding air. For the SLOW laser we compare the computed near fields to experimental data for different design parameters of the device. For the VCSEL example a comparison to simplified 1D mode calculations is carried out.

  12. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of......, and ways to reduce high-frequency jitter is discussed. The main result of the thesis is a new design of the epitaxial structure that both enables simplified fabrication and improves the properties of monolithic lasers. 40 GHz monolithic lasers with record low jitter and high power is presented as well...... as the first 10 GHz all-active monolithic laser with both short pulses and low jitter.Results from external cavity mode-locked lasers are also reported along with an investigation of the influence of the operating conditions on the performance of the device. Antireflection coatings are a critical limiting...

  13. Synchronous Characterization of Semiconductor Microcavity Laser Beam

    CERN Document Server

    Wang, Tao

    2015-01-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross-section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center and the defects-related spectrum can also be extracted from these high-resolution pictures.

  14. Wavelength-resonant surface-emitting semiconductor laser

    Science.gov (United States)

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  15. Laser cooling of a semiconductor by 40 kelvin.

    Science.gov (United States)

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua

    2013-01-24

    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  16. [A clinical observation of pericoronitis treatment with pulse semiconductor laser].

    Science.gov (United States)

    Lu, Shan; Fang, Yuan

    2004-08-01

    In order to valuate the effect of pericoronitis treated with pulse semiconductor laser. As a treatment group, 24 ones drawn ramdomly from 48 cases of pericoronitis were given periodontal radiation, point-radiation therapy and pharmacotherapy as well. While another 24 cases as a contrast group were given pharmacotherapy only. On the 3rd day and the 5th day the degree of pain and restriction of mouth opening of the two groups were graded, contrasted and processed by Ridit statistics. Result, The therapy group gained more notable effect in pain-relieving and mouth-opening-improving than the contrast group. Because of no damage, handy and can be done easily, be definite in curative effect, Pulse semiconductor laser treatment pericoronitis deserves popularizing.

  17. Is there a linewidth theory for semiconductor lasers?

    CERN Document Server

    Spivak, B

    2006-01-01

    Semiconductor laser generation begins at a critical injection when the gain and loss spectra touch each other at a singular frequency. In the framework of the standard (Schawlow-Townes-Lax-Henry) theory, the finite linewidth results from the account of fluctuations associated with the random spontaneous emission processes. This approach is based on the assumption that in the mean-field approximation the singular frequency generation persists for injection levels higher than critical. We show that this assumption in the framework of the Boltzmann kinetic equation for electrons and photons is invalid and therefore the standard description of semiconductor laser linewidth lacks theoretical foundation. Experimental support of the standard theory is also questionable.

  18. Self-Pulsating Semiconductor Lasers Theory and Experiment

    CERN Document Server

    Mirasso, C R; Hernández-García, E; Lenstra, D; Lynch, S; Landais, P; Phelan, P; O'Gorman, J; San Miguel, M; Elsasser, W

    1999-01-01

    We report detailed measurements of the pump-current dependency of the self-pulsating frequency of semiconductor CD lasers. A distinct kink in this dependence is found and explained using rate-equation model. The kink denotes a transition between a region where the self-pulsations are weakly sustained relaxation oscillations and a region where Q-switching takes place. Simulations show that spontaneous emission noise plays a crucial role for the cross-over.

  19. Excitability in a quantum dot semiconductor laser with optical injection.

    Science.gov (United States)

    Goulding, D; Hegarty, S P; Rasskazov, O; Melnik, S; Hartnett, M; Greene, G; McInerney, J G; Rachinskii, D; Huyet, G

    2007-04-13

    We experimentally analyze the dynamics of a quantum dot semiconductor laser operating under optical injection. We observe the appearance of single- and double-pulse excitability at one boundary of the locking region. Theoretical considerations show that these pulses are related to a saddle-node bifurcation on a limit cycle as in the Adler equation. The double pulses are related to a period-doubling bifurcation and occur on the same homoclinic curve as the single pulses.

  20. Refractory period of an excitable semiconductor laser with optical injection

    CERN Document Server

    Garbin, Bruno; Prati, Franco; Javaloyes, Julien; Tissoni, Giovanna; Barland, Stéphane

    2016-01-01

    Injection-locked semiconductor lasers can be brought to a neuron-like excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

  1. Final Report: High Power Semiconductor Laser Sources,

    Science.gov (United States)

    1989-01-01

    m(I mO (26a) Here a is a dimensionless quantity related to the ratio be- 2 tween pump and field intensities, and in our model, is 0, = bxo tanh (xo...and E. Kapon. "Application of the equivalent index bxo 6b method to DH diode lasers," Appl. Opt.. vol. 18. no. 22. pp. 3724- 3725. 1979. While 0,1

  2. Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

    Science.gov (United States)

    2013-01-01

    semiconductor lasers based on quantum well gain lever,” Appl. Phys. Lett., 59, 2216–2218 (1991). [33] C. P. Seltzer , L. D. Westbrook, and H. J. Wickes...Improved signal-to-noise ratio in gain-levered InGaAsP/InP MQW lasers,” Electron. Lett., 29, 230–231 (1993). [34] L. D. Westbrook and C. P. Seltzer ...Electron. Lett., 30, 37–39 (1994). [37] C. P. Seltzer , L. D. Westbrook, and H. J. Wickes, “The “gain-lever” effect in InGaAsP/InP multiple quantum well

  3. External cavity beam combining of 21 semiconductor lasers using SPGD.

    Science.gov (United States)

    Montoya, Juan; Augst, Steven J; Creedon, Kevin; Kansky, Jan; Fan, Tso Yee; Sanchez-Rubio, Antonio

    2012-04-10

    Active coherent beam combining of laser oscillators is an attractive way to achieve high output power in a diffraction limited beam. Here we describe an active beam combining system used to coherently combine 21 semiconductor laser elements with an 81% beam combining efficiency in an external cavity configuration compared with an upper limit of 90% efficiency in the particular configuration of the experiment. Our beam combining system utilizes a stochastic parallel gradient descent (SPGD) algorithm for active phase control. This work demonstrates that active beam combining is not subject to the scaling limits imposed on passive-phasing systems.

  4. Sensitivity of quantum-dot semiconductor lasers to optical feedback.

    Science.gov (United States)

    O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V

    2004-05-15

    The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.

  5. Femtosecond laser color marking of metal and semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ionin, Andrey A.; Kudryashov, Sergey I.; Makarov, Sergey V.; Seleznev, Leonid V.; Sinitsyn, Dmitry V. [Russian Academy of Sciences, P.N. Lebedev Physical Institute, Moscow (Russian Federation); Golosov, Evgeniy V.; Golosova, Ol' ga A.; Kolobov, Yuriy R. [Belgorod State University, Belgorod (Russian Federation); Ligachev, Alexander E. [Russian Academy of Sciences, A.M. Prokhorov General Physics Institute, Moscow (Russian Federation)

    2012-05-15

    Color marking of rough or smooth metal (Al, Cu, Ti) and semiconductor (Si) surfaces was realized via femtosecond laser fabrication of periodic surface nanorelief, representing one-dimensional diffraction gratings. Bright colors of the surface nanorelief, especially for longer electromagnetic wavelengths, were provided during marking through pre-determined variation of the laser incidence angle and the resulting change of the diffraction grating period. This coloration technique was demonstrated for the case of silicon and various metals to mark surfaces in any individual color with a controllable brightness level and almost without their accompanying chemical surface modification. (orig.)

  6. High density semiconductor nanodots by direct laser fabrication

    Science.gov (United States)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  7. A semiconductor laser for an integrated optical heterodyne receiver

    Energy Technology Data Exchange (ETDEWEB)

    Tosikhiro, F.; Khiromoto, S.

    1984-04-14

    A design is patented that consists of two identical semiconductor lasers grown on the same substrate, one of which is used to transmit the information signal and the other is used as the oscillator. The oscillator frequency is tuned by varying the laser resonator length. The signals from the two oscillators are mixed at the transmitting end of the communications link, which makes it possible to reduce losses during the introduction of the signal to the fiber and the detector. This design serves to reduce the influence of temperature variations.

  8. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  9. Packaging and Performance of 980nm Broad Area Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High power broad area semiconductor lasers have found increasing applications in pumping of solid state laser systems and fiber amplifiers, frequency doubling, medical systems and material processing.Packaging including the assembly design, process and thermal management, has a significant impact on the optical performance and reliability of a high power broad area laser. In this paper, we introduce the package structures and assembling process of 980nm broad area lasers and report the performances including output power, thermal behavior and far fields.We will report two types of high power broad area laser assemblies.One is a microchannel liquid cooled assembly and the other is a conduction cooled CT-mount assembly. Optical powers of 15W and 10W were achieved from a 980nm broad area laser with a 120 μ m stripe width in a microchannel liquid cooled assembly and conduction cooled CT-mount assembly, respectively.Furthermore,a high power of 6.5W out of fiber was demonstrated from a pigtailed, fully packaged butterfly-type module without TEC (Thermoelectric cooler).The measurement results showed that thermal management is the key in not only improving output power, but also significantly improving beam divergence and far field distribution.The results also showed that the die attach solder can significant impact the reliability of high power broad area lasers and that indium solder is not suitable for high power laser applications due to electromigration at high current densities and high temperatures.

  10. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  11. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  12. Ultrashort pulse laser slicing of semiconductor crystal

    Science.gov (United States)

    Kim, Eunho; Shimotsuma, Yasuhiko; Sakakura, Masaaki; Miura, Kiyotaka

    2016-07-01

    Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without the reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by femtosecond laser induced slicing method. By using this, the exfoliated surface with the root-mean-square roughness of 3 μm and the cutting-loss thickness smaller than 30 μm was successfully demonstrated. We have also observed the nanostructure on the exfoliated surface in SiC crystal.

  13. Superfluorescent emission in electrically pumped semiconductor laser

    CERN Document Server

    Boiko, D L; Stadelmann, T; Grossmann, S; Hoogerwerf, A; Weig, T; Schwarz, U T; Sulmoni, L; Lamy, J -M; Grandjean, N

    2013-01-01

    We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) superlinear peak power growth, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.

  14. Introduction to semiconductor lasers for optical communications an applied approach

    CERN Document Server

    Klotzkin, David J

    2014-01-01

    This textbook provides a thorough and accessible treatment of semiconductor lasers from a design and engineering perspective. It includes both the physics of devices as well as the engineering, designing, and testing of practical lasers. The material is presented clearly with many examples provided. Readers of the book will come to understand the finer aspects of the theory, design, fabrication, and test of these devices and have an excellent background for further study of optoelectronics. This book also: ·         Provides a multi-faceted approach to explaining the theories behind semiconductor lasers, utilizing mathematical examples, illustrations, and written theoretical presentations ·         Offers a balance of relevant optoelectronic topics, with specific attention given to distributed feedback lasers, growth techniques, and waveguide cavity design ·         Provides a summary of every chapter, worked examples, and problems for readers to solve ·         Empasizes...

  15. Dynamic single-mode semiconductor lasers with a distributed reflector

    Energy Technology Data Exchange (ETDEWEB)

    Suematsu, Y.; Arai, S.; Kishino, K.

    1983-03-01

    Recent progress in dynamic single-mode (DSM) semiconductor lasers in the wavelength of 1.5-1.6 microns are reviewed, and the basic principle of DSM operation is given. Study of the DSM laser is originated for application to wide-band optical-fiber communication in the lowest loss wavelength region of 1.5 to 1.65 microns. A DSM laser consists of a mode-selective resonator and a transverse-mode-controller waveguide, as in the narrow-striped distributed-Bragg-reflector (DBR) laser, so as to maintain a fixed axial mode under rapid direct modulation. The technology of monolithic integration for optical circuits is applied to realize some DSM lasers. Structures, static and dynamic characteristics of lasing wavelength, output power, and reliability of state-of-the-art DSM lasers are reviewed. Dynamic spectral width of 0.3 nm, output power of a few milliwatts, and reliability over a few thousand hours are reported for experimental DSM lasers. 120 references.

  16. Dynamic single-mode semiconductor lasers with a distributed reflector

    Science.gov (United States)

    Suematsu, Y.; Arai, S.; Kishino, K.

    1983-03-01

    Recent progress in dynamic single-mode (DSM) semiconductor lasers in the wavelength of 1.5-1.6 microns are reviewed, and the basic principle of DSM operation is given. Study of the DSM laser is originated for application to wide-band optical-fiber communication in the lowest loss wavelength region of 1.5 to 1.65 microns. A DSM laser consists of a mode-selective resonator and a transverse-mode-controller waveguide, as in the narrow-striped distributed-Bragg-reflector (DBR) laser, so as to maintain a fixed axial mode under rapid direct modulation. The technology of monolithic integration for optical circuits is applied to realize some DSM lasers. Structures, static and dynamic characteristics of lasing wavelength, output power, and reliability of state-of-the-art DSM lasers are reviewed. Dynamic spectral width of 0.3 nm, output power of a few milliwatts, and reliability over a few thousand hours are reported for experimental DSM lasers.

  17. High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures

    Science.gov (United States)

    2009-05-01

    CONTRACT NUMBER EFFICIENCY, ROOM TEMPERATURE MID-INFRARED SEMICONDUCTOR LASER DEVELOPMENT FOR IR COUNTERMEASURES Sb. GRANT NUMBER FA9550-04-1-0433...04-1-0433 Title: (DEPSCOR FY04) High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures Principal...AFOSR Final Performance Report, March 2008 Award No.: FA9550-04-1-0433 Title: High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser

  18. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal...

  19. Dynamic analysis and continuous control of semiconductor lasers

    CERN Document Server

    Behnia, Sohrab; Afrang, Saeid

    2011-01-01

    Stability control in laser is still an emerging field of research. In this paper the dynamics of External cavity semiconductor lasers (ECSLs) is widely studied applying the methods of chaos physics. The stability is analyzed through plotting the Lyapunov exponent spectra, bifurcation diagrams and time series. The oscillation of the electric field E has been reported to be either periodic (P1,P2,..) or chaotic. The results of the study show that the rich nonlinear dynamics of the electric field |E|^2 includes saddle node bifurcations, quasi-periodicity and regular pulse packages. The issue of finding the conditions for creating stable domains has been studied. By considering the dynamical pumping current system coupled with laser, a method for the creation of the stable domain has been introduced.

  20. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector......The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

  1. Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

    Science.gov (United States)

    Parrotta, Daniele C; Lubeigt, Walter; Kemp, Alan J; Burns, David; Dawson, Martin D; Hastie, Jennifer E

    2011-04-01

    A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.

  2. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers.

    Science.gov (United States)

    Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

    2016-12-19

    Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing.

  3. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers

    Science.gov (United States)

    Mesaritakis, Charis; Kapsalis, Alexandros; Bogris, Adonis; Syvridis, Dimitris

    2016-12-01

    Neuro-inspired implementations have attracted strong interest as a power efficient and robust alternative to the digital model of computation with a broad range of applications. Especially, neuro-mimetic systems able to produce and process spike-encoding schemes can offer merits like high noise-resiliency and increased computational efficiency. Towards this direction, integrated photonics can be an auspicious platform due to its multi-GHz bandwidth, its high wall-plug efficiency and the strong similarity of its dynamics under excitation with biological spiking neurons. Here, we propose an integrated all-optical neuron based on an InAs/InGaAs semiconductor quantum-dot passively mode-locked laser. The multi-band emission capabilities of these lasers allows, through waveband switching, the emulation of the excitation and inhibition modes of operation. Frequency-response effects, similar to biological neural circuits, are observed just as in a typical two-section excitable laser. The demonstrated optical building block can pave the way for high-speed photonic integrated systems able to address tasks ranging from pattern recognition to cognitive spectrum management and multi-sensory data processing.

  4. Bidirectional private key exchange using delay-coupled semiconductor lasers.

    Science.gov (United States)

    Porte, Xavier; Soriano, Miguel C; Brunner, Daniel; Fischer, Ingo

    2016-06-15

    We experimentally demonstrate a key exchange cryptosystem based on the phenomenon of identical chaos synchronization. In our protocol, the private key is symmetrically generated by the two communicating partners. It is built up from the synchronized bits occurring between two current-modulated bidirectionally coupled semiconductor lasers with additional self-feedback. We analyze the security of the exchanged key and discuss the amplification of its privacy. We demonstrate private key generation rates up to 11  Mbit/s over a public channel.

  5. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

    2016-01-01

    name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

  6. An electrically injected rolled-up semiconductor tube laser

    Energy Technology Data Exchange (ETDEWEB)

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  7. DBR-free optically pumped semiconductor disk lasers

    Science.gov (United States)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  8. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper

    2006-01-01

    The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one...... picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  9. Spherical distribution structure of the semiconductor laser diode stack for pumping

    Institute of Scientific and Technical Information of China (English)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling efficiency.The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium.The efficiency of the hollow light pipe,which is used for semiconductor laser diode stack coupling,is analyzed by geometric optics and ray tracing.Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure.Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system,and guides parameter optimization.Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency,reduce the optimum duct length and improve the output energy field distribution.

  10. A Step Tunable External Cavity Semiconductor Laser for WDM Network Deployment

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    We put forward a kind of tunable external cavity semiconductor laser with feedback on both chip facets. It outputs the single-frequency laser with high side-mode suppression ratio and the frequency could be step tuned.

  11. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    Science.gov (United States)

    Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

    2017-02-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

  12. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

    DEFF Research Database (Denmark)

    Dontabactouny, M.; Piron, R.; Klaime, K.

    2012-01-01

    This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 mA....

  13. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh

    2000-06-01

    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  14. Experimental examinations of semiconductor laser amplifiers for optical communication technology

    Science.gov (United States)

    Ludwig, Reinhold

    1993-01-01

    Properties of SLA (Semiconductor Laser Amplifier), which are particularly interesting for application to linear repeaters in coherent multichannel systems, are studied and design rules for future optimized amplifier structure are deduced. Laser diode antireflection was examined and reflection factor was measured. Low signal properties were discussed considering injection current, wavelengths, temperature and polarization. The coupling between amplifiers and glass fibers was examined. The utilization of cascade amplifiers as linear repeaters in multichannel heterodyne systems and television distribution systems was investigatied. The following results are obtained: measurement and calculation of the paradiaphony between two signals radiated in a SLA; multichannel data transfer through a SLA; polarization independent amplification with SLA configurations; measurement of the frequency dependence of four wave mixing sidelines in a SLA; measurement of the system degradation through echoes in a bidirectional SLA chain; data transmission with frequency conversion and calculation of multichannel transmission systems with cascade SLA, taking into account saturation, signal to noise ratio, bandwidth reduction and echo.

  15. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter...

  16. Timing and amplitude jitter in a gain-switched multimode semiconductor laser

    Science.gov (United States)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi

    2016-04-01

    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  17. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  18. A design of atmospheric laser communication system based on semiconductor laser

    Science.gov (United States)

    Rao, Jionghui; Yao, Wenming; Wen, Linqiang

    2016-01-01

    This paper uses semiconductor laser with 905nm wave length as light source to design a set of short-distance atmospheric laser communication system. This system consists of laser light source, launch modulation circuit, detector, receiving and amplifying circuit and so on. First, this paper analyzes the factors which lead to the decrease of luminous power of laser communication link under the applicable environment-specific sea level, then this paper elicits the relationship of luminous power of receiving optical systems and distance, slant angle and divergence angle which departures from the laser beam axis by using gaussian beam geometric attenuation mode. Based on the two reasons that PPM modulation theory limits the transmission rate of PPM modulation, that is, this paper makes an analysis on repetition frequency and pulse width of laser, makes theoretical calculation for typical parameters of semiconductor laser and gets the repetition frequency which is 10KHz, pulse width is50ns, the transmission rate is 71.66 Kb/s, at this time, modulation digit is 9; then this paper selects frame synchronization code of PPM modulation and provides implementation method for test; lastly, programs language based on Verilog, uses the FPGA development board to realize PPM modulation code and does simulation test and hardware test. This paper uses APD as the detector of receiving and amplifying circuit. Then this paper designs optical receiving circuit such as amplifying circuit, analog-digital conversion circuit based on the characteristics of receipt.

  19. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    Science.gov (United States)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  20. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  1. The dynamic behavior of a semiconductor ring laser

    Science.gov (United States)

    Van der Sande, Guy; Gelens, Lendert; Tassin, Philippe; Scirè, Alessandro; Danckaert, Jan

    2008-04-01

    We review theoretical results on the dynamics of solitary single longitudinal mode and single transversal mode semiconductor ring lasers. These analyses are based on a rate equation model for the slowly varying envelopes of the counter-propagating fields in the ring cavity which has been proposed by Sorel et al. [Opt. Lett. 27, 1992 (2002); IEEE J. Quantum Electron. 39, 1187 (2003)]. The model shows several operating regimes. The lasers are found to operate bidirectionally up to twice the threshold, where unidirectional operation starts. Just above threshold, the lasers operate in a regime where the two counterpropagating modes are continuous wave, while as the injected current is increased, a regime appears where the intensities of the two counterpropagating modes undergo alternate sinusoidal oscillations. To understand these dynamical features, we discuss a reduction of this basic rate equation model derived by Van der Sande et al. [accepted for publication in J. Phys. B (2008)]. The reduction has been achieved using asymptotic methods based on the typical relative scaling of the dynamical time scales of the system. Physical conditions for the emergence of the operating regimes are assessed quantitatively in terms of nonlinear (saturation processes) and linear coupling (backscattering) between the counter-propagating modes.

  2. All-optical noninvasive delayed feedback control of semiconductor lasers

    CERN Document Server

    Schikora, Sylvia

    2013-01-01

    The stabilization of unstable states hidden in the dynamics of a system, in particular the control of chaos, has received much attention in the last years. Sylvia Schikora for the first time applies a well-known control method called delayed feedback control entirely in the all-optical domain. A multisection semiconductor laser receives optical feedback from an external Fabry-Perot interferometer. The control signal is a phase-tunable superposition of the laser signal and provokes the laser to operate in an otherwise unstable periodic state with a period equal to the time delay. The control is noninvasive, because the reflected signal tends to zero when the target state is reached.   The work has been awarded the Carl-Ramsauer-Prize 2012.   Contents ·         All-Optical Control Setup ·         Stable States with Resonant Fabry-Perot Feedback ·         Control of an Unstable Stationary State and of Unstable Selfpulsations ·         Controlling Chaos ·         Con...

  3. Purcell effect in sub-wavelength semiconductor lasers.

    Science.gov (United States)

    Gu, Qing; Slutsky, Boris; Vallini, Felipe; Smalley, Joseph S T; Nezhad, Maziar P; Frateschi, Newton C; Fainman, Yeshaiahu

    2013-07-01

    We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.

  4. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine

    Science.gov (United States)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  5. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  6. THE STUDY OF ENERGY STATES OF CHARGED CARRIERS ON THE SEMICONDUCTOR LASERS

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    2002-02-01

    Full Text Available In the active regions of the semiconductor lasers electrons interact with the electromagnetic fields and exchange their energy states and so the atomic energy levels and meanwhile their excess energy is transferred to optical energy. During this exchange the energy states of electrons change. Because the change of the electron energy states affects the threshold current, this energy change is important in the semiconductor laser band engineering. In this work the behaviour of the energy of the electrons and their eigenstates on the heterojunction semiconductor lasers and so the atomic energy levels are investigated.

  7. Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers.

    Science.gov (United States)

    Xu, Yanqing; Chen, Qi; Zhang, Chunfeng; Wang, Rui; Wu, Hua; Zhang, Xiaoyu; Xing, Guichuan; Yu, William W; Wang, Xiaoyong; Zhang, Yu; Xiao, Min

    2016-03-23

    Two-photon-pumped lasers have been regarded as a promising strategy to achieve frequency up-conversion for situations where the condition of phase matching required by conventional approaches cannot be fulfilled. However, their practical applications have been hindered by the lack of materials holding both efficient two-photon absorption and ease of achieving population inversion. Here, we show that this challenge can be tackled by employing colloidal nanocrystals of perovskite semiconductors. We observe highly efficient two-photon absorption (with a cross section of 2.7 × 10(6) GM) in toluene solutions of CsPbBr3 nanocrystals that can excite large optical gain (>500 cm(-1)) in thin films. We have succeeded in demonstrating stable two-photon-pumped lasing at a remarkable low threshold by coupling CsPbBr3 nanocrystals with microtubule resonators. Our findings suggest perovskite nanocrystals can be used as excellent gain medium for high-performance frequency-up-conversion lasers toward practical applications.

  8. Portable semiconductor laser system to stop internal bleeding

    Science.gov (United States)

    Rediker, Robert H.; Durville, Frederic M.; Cho, George; Boll, James H.

    1995-03-01

    One significant cause of death during a sever trauma (gun wound or stab wound) is internal bleeding. A semiconductor diode laser system has been used in in vitro studies of cauterizing veins and arteries to stop bleeding. The conditions of laparoscopic surgery, including bleeding conditions (blood flow and pressure), are simulated. Results have been obtained both with and without using a hemostat (e.g., forceps) to temporarily stop the bleeding prior to the cautery. With the hemostat and a fiber-coupled 810-nm laser, blood vessels of up to 5 mm diameter were cauterized with an 8 W output from the fiber. Great cautions must be used in extrapolating from these in vitro results, since the exact conditions of bleeding in a living being are impossible to exactly reproduce in a laboratory in-vitro experiment. In a living being, when blood flow stops the cessation of nourishment to the vessels results in irreversible physiological changes. Also, the blood itself is different from blood in a living being because an anti-clotting agent (heparin) was added in order to inhibit the blood's natural tendency to coagulate.

  9. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal;

    2009-01-01

    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser...

  10. Phase noise reduction by self-phase locking in semiconductor lasers using phase conjugate feedback

    DEFF Research Database (Denmark)

    Petersen, Lykke; Gliese, Ulrik Bo; Nielsen, Torben Nørskov

    1994-01-01

    A theoretical analysis of the behavior of the frequency/phase noise of semiconductor lasers with external phase conjugate feedback is presented. It is shown that the frequency noise is drastically reduced even for lasers with butt-coupled phase conjugate mirrors. In this laser system, the phase...

  11. Optical label switching in telecommunication using semiconductor lasers, amplifiers and electro-absorption modulators

    DEFF Research Database (Denmark)

    Chi, Nan; Christiansen, Lotte Jin; Jeppesen, Palle

    2004-01-01

    We demonstrate all-optical label encoding and updating for an orthogonally labeled signal in combined IM/FSK modulation format utilizing semiconductor lasers, semiconductor optical amplifiers and electro-absorption modulators. Complete functionality of a network node including two-hop transmissio...

  12. Simulation of a tunable optically pumped terahertz intersubband laser with diluted magnetic semiconductors

    NARCIS (Netherlands)

    Popadić, M.; Milanović, V.; Ikonić, Z.; Indijn, D.

    2006-01-01

    A simulation of an optically pumped laser based on a ZnSe/Zn1−yCdySe double quantum well with a Zn1−xMnxSe diluted magnetic semiconductor barrier is presented. Giant Zeeman splitting in diluted magnetic semiconductors leads to splitting of electronic states, which in turn leads to tunability of lase

  13. Investigating a Hypothetical Semiconductor Laser Bar Using a Laser Diode Simulation/Emulation Tool Using Random Levels of Defects

    Directory of Open Access Journals (Sweden)

    C.K. Amuzuvi

    2014-02-01

    Full Text Available In this study, Barlase, a semiconductor laser diode emulation tool, is used to emulate the by-emitter degradation of high power semiconductor laser diodes. Barlase is a software that uses a LabView control interface. We have demonstrated how Barlase works using a hypothetical laser diode bar (multiple emitters to validate the usefulness of the tool. A scenario using the hypothetical bar was investigated to demonstrate Barlase as follows: random low-level of defects distributed across the bar. The results of the simulation show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

  14. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser

    Institute of Scientific and Technical Information of China (English)

    KONG Duan-Hua; ZHU Hong-Liang; LIANG Song; QIU Ji-Fang; ZHAO Ling-Juan

    2012-01-01

    A 1.56 μm passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated.Without any external pulse compression,a Lorentz pulse train with a pulse width of 1.03 ps and a repetition rate of 35.6 GHz is obtained,which is one of the best results that have been reported on similar devices.The optical pulse has a 300 kHz line width and a 50dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.%A 1.56μm passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated. Without any external pulse compression, a Lorentz pulse train with a pulse width of 1.03ps and a repetition rate of 35.6 GHz is obtained, which is one of the best results that have been reported on similar devices. The optical pulse has a 300 kHz line width and a 50 dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.

  15. A Novel Technique to Measure Gain Spectrum for Fabry-Pérot Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A novel gain measurement technique based on the integration of the measured amplified spontaneous emission spectrum multiplying a phase function over one longitudinal mode interval is proposed for Fabry-Perot semiconductor lasers.

  16. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    Directory of Open Access Journals (Sweden)

    Vincenzo Spagnolo

    2009-12-01

    Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

  17. Variation of Lasing Wavelength of Fiber Grating Semiconductor Laser with Temperature for Different External Cavity Lengths

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    For different external cavity lengths, lasing wavelength variation of fiber grating external cavity semiconductor laser (FGECSL) with ambient temperature has been investigated theoretically, and the theoretical results are in agreement with reported experimental observations.

  18. Analysis of MPN, MHN and Phase Noise of a Two-Mode Semiconductor Laser

    Institute of Scientific and Technical Information of China (English)

    Ebrahim Mortazy; Vahid Ahmadi; Mohammad Kazem Moravvej-Farshi; Abbas Zarifkar

    2003-01-01

    Intensity noise including Mode Partition Noise (MPN) and Mode Hopping Noise (MHN), and Phase/Frequency Noise Spectrum (FNS) are calculated for a two-mode semiconductor laser. RIN is derived considering of MPN and MHN effect.

  19. The Effect of Lateral Guiding Mechanism on Noise Characteristics in Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    Abbas Zarifkar; Afsaneh Falahatpisheh; Mohammad Kazem Moravvej-Farshi; Ebrahim Mortazy

    2003-01-01

    A comparison between intensity noise spectra and also the line shapes of gain-guided, weakly-index-guided, and strongly-index-guided semiconductor lasers are made using numerical solution of Maxwell-Bloch equations including spontaneous emission noise.

  20. Phase noise reduction of a semiconductor laser in a composite optical phase-locked loop

    Science.gov (United States)

    Satyan, Naresh; Sendowski, Jacob; Vasilyev, Arseny; Rakuljic, George; Yariv, Amnon

    2010-12-01

    The bandwidth and residual phase noise of optical phase-locked loops (OPLLs) using semiconductor lasers are typically constrained by the nonuniform frequency modulation response of the laser, limiting their usefulness in a number of applications. It is shown in this work that additional feedback control using an optical phase modulator improves the coherence between the master and slave lasers in the OPLL by achieving bandwidths determined only by the propagation delay in the loop. A phase noise reduction by more than a factor of two is demonstrated in a proof-of-concept experiment using a commercial distributed feedback semiconductor laser.

  1. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  2. All-optical NOR gate based on injection-locking effect in a semiconductor laser

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.

  3. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Heinrich, Martin, E-mail: mh@nus.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore, Singapore 117574 (Singapore); NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore, Singapore 117456 (Singapore); Kluska, Sven [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, D-79110 Freiburg (Germany); Hameiri, Ziv; Hoex, Bram [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore, Singapore 117574 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore 117456 (Singapore)

    2013-12-23

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.

  4. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  5. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  6. Techniques for increasing output power from mode-locked semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Mar, A.; Vawter, G.A.

    1996-02-01

    Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

  7. LASER DOPPLER-VELOCIMETER BASED ON THE SELF-MIXING EFFECT IN A FIBER-COUPLED SEMICONDUCTOR-LASER - THEORY

    NARCIS (Netherlands)

    KOELINK, MH; SLOT, M; DEMUL, FFM; GREVE, J; GRAAFF, R; DASSEL, ACM; AARNOUDSE, JG

    1992-01-01

    A laser Doppler velocimeter that consists of a semiconductor laser coupled to a fiber and that uses the self-mixing effect is presented. The velocimeter can be used for solids and fluids. A theoretical model is developed to describe the self-mixing signals as a function of the amount of feedback int

  8. Anticipation in the synchronization of chaotic semiconductor lasers with optical feedback.

    Science.gov (United States)

    Masoller, C

    2001-03-26

    The synchronization of chaotic semiconductor lasers with optical feedback is studied numerically in a one-way coupling configuration, in which a small amount of the intensity of one laser (master laser) is injected coherently into the other (slave laser). A regime of anticipated synchronization is found, in which the intensity of the slave laser is synchronized to the future chaotic intensity of the master laser. Anticipation is robust to small noise and parameter mismatches, but in this case the synchronization is not complete. It is also shown that anticipated synchronization occurs in coupled time-delay systems, when the coupling has a delay that is less than the delay of the systems.

  9. A SEMICONDUCTOR-LASER USED FOR DIRECT MEASUREMENT OF THE BLOOD PERFUSION OF TISSUE

    NARCIS (Netherlands)

    DEMUL, FFM; KOELINK, MH; WEIJERS, AL; GREVE, J; AARNOUDSE, JG; GRAAFF, R; DASSEL, ACM

    1993-01-01

    An instrument consisting merely of a semiconductor laser in its own housing was used to measure the blood perfusion in tissue. Use is made of the feedback of Doppler-scattered light to the photodiode in the laser housing. A recording perfusion of a finger under occlusion of blood flow in the arm is

  10. Rate Equation-Based Phase Recovery for Semiconductor Laser Coherent Transmitters

    DEFF Research Database (Denmark)

    Piels, Molly; Iglesias Olmedo, Miguel; Pang, Xiaodan;

    2015-01-01

    We present a novel carrier recovery technique for coherent systems with semiconductor lasers that incorporates the laser dynamics. A sensitivity improvement of 8dB over a decision-directed phase-locked loop is achieved experimentally for 28GBd DP-16QAM....

  11. All semiconductor laser Doppler anemometer at 1.55 μm

    DEFF Research Database (Denmark)

    Hansen, Rene Skov; Pedersen, Christian

    2008-01-01

    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300...

  12. Semiconductor laser with filtered optical feedback: bridge between conventional feedback and optical injection.

    NARCIS (Netherlands)

    Hek, G.M.; Rottschäfer, V.

    2005-01-01

    We study a model for a semiconductor laser subject to filtered optical feedback, i.e. a system of delay differential equations (DDEs). In this model, the filter is characterized by a mean frequency Omega(m) and a filter width A. In the limit of a narrow filter (lambda -> 0), the laser equations redu

  13. Semiconductor laser with filtered optical feedback: from optical injection to conventional feedback.

    NARCIS (Netherlands)

    Hek, G.M.; Rottschäfer, V.

    2007-01-01

    Abstract We study a model for a semiconductor laser subject to filtered optical feedback, that is a system of delay differential equations (DDEs). In this model the filter is characterised by a mean frequency Ωm and a filter width λ. In the limit of a narrow filter (λ → 0) the laser equations reduce

  14. Semiconductor laser with filtered optical feedback: bridge between conventional feedback and optical injection.

    NARCIS (Netherlands)

    Hek, G.M.; Rottschäfer, V.

    2005-01-01

    We study a model for a semiconductor laser subject to filtered optical feedback, i.e. a system of delay differential equations (DDEs). In this model, the filter is characterized by a mean frequency Omega(m) and a filter width A. In the limit of a narrow filter (lambda -> 0), the laser equations

  15. 2-µm Tm:Lu₂O₃ ceramic disk laser intracavity-pumped by a semiconductor disk laser.

    Science.gov (United States)

    Saarinen, Esa J; Vasileva, Elena; Antipov, Oleg; Penttinen, Jussi-Pekka; Tavast, Miki; Leinonen, Tomi; Okhotnikov, Oleg G

    2013-10-07

    A proof-of-principle study of a 1.97-µm Tm:Lu2O3 ceramic disk laser, intracavity pumped by a 1.2-µm semiconductor disk laser, is presented. The demonstrated concept allows for improved pump absorption and takes advantage of the broad wavelength coverage provided by semiconductor disk laser technology. For thin disk lasers the small thickness of the gain element typically leads to inefficient pump light absorption. This problem is usually solved by using a complex multi-pass pump arrangement. In this study we address this challenge with a new laser concept of an intracavity pumped ceramic thin disk laser. The output power at 1.97 µm was limited to 250 mW due to heat spreader-less mounting scheme of the ceramic gain disk.

  16. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

    2015-01-01

    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...... based wind sensors have a strong potential in a number of applications such as wind turbine control, wind resource assessment, and micrometeorology (e.g. as alternative to the construction of meteorological towers with anemometers and wind vanes)....

  17. Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

    Science.gov (United States)

    Mansour, Kamjou; Ksendzov, Alexander; Menzies, Robert T.; Maker, Paul D.; Muller, Richard E.; Manfra, M. J.; Turner, George W.

    2003-01-01

    High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

  18. Rate-equation model for multi-mode semiconductor lasers with spatial hole burning.

    Science.gov (United States)

    Lenstra, Daan; Yousefi, Mirvais

    2014-04-07

    We present a set of rate equations for the modal amplitudes and carrier-inversion moments that describe the deterministic multi-mode dynamics of a semiconductor laser due to spatial hole burning. Mutual interactions among the lasing modes, induced by high- frequency modulations of the carrier distribution, are included by carrier-inversion moments for which rate equations are given as well. We derive the Bogatov effect of asymmetric gain suppression in semiconductor lasers and illustrate the potential of the model for a two and three-mode laser by numerical and analytical methods.

  19. Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

    Science.gov (United States)

    Mansour, Kamjou; Ksendzov, Alexander; Menzies, Robert T.; Maker, Paul D.; Muller, Richard E.; Manfra, M. J.; Turner, George W.

    2003-01-01

    High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

  20. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

    2014-11-15

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  1. IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods

    Science.gov (United States)

    McCann; Chao; Sachar; McAlister; Li; Fang; Wu; Namjou

    1999-09-01

    This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

  2. Monte Carlo markovian modeling of modal competition in dual-wavelength semiconductor lasers

    Science.gov (United States)

    Chusseau, Laurent; Philippe, Fabrice; Jean-Marie, Alain

    2014-03-01

    Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer. . . As a major result, a possible steady-sate dualmode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.

  3. Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2015-08-31

    We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

  4. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs.

  5. Analysis of surface damage produced by pulsed laser ablation on metal Al and semiconductor Si

    Institute of Scientific and Technical Information of China (English)

    ManBao-Yuan; LiuAi-Hua; 等

    1998-01-01

    The suraface morphological changesd produced by Nd:YAG pulsed laser ablation of metal Al and semiconductor Si were carefully examined and analyzed by using scanning elkectron microscope.The formation mechanism of the droplets was discussed.and the reasons for formation of the microcracks on the laser irradiated area of the target surface were analyzed by calculating the thermal stress,the vapor pressure and the shock pressure induced by the laser supported detonation.

  6. Chaos synchronization in injection-locked semiconductor lasers with optical feedback

    Institute of Scientific and Technical Information of China (English)

    Liu Yu-Jin; Zhang Sheng-Hai; Qian Xing-Zhong

    2007-01-01

    Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing.

  7. Investigation of laser radar systems based on mid-infrared semiconductor lasers

    Science.gov (United States)

    Rybaltowski, Adam

    This dissertation deals with the possibility of utilizing mid-infrared semiconductor lasers in systems of optical remote sensing with range resolution, called laser radar or lidar. The main subject investigated in this dissertation is two-fold: firstly, an analysis of the signal-to-noise ratio (SNR) and related maximum sensing range calculations in this type of lidar based on available system components, and---secondly---improvements in the Random-Modulation Continuous-Wave (RM-CW) lidar technique to better utilize available mid-infrared semiconductor lasers. As far as the SNR analysis is concerned, an appropriate framework has been constructed to analyze post-demodulation noise in mid-infrared direct-detection RM-CW lidar. It is based on a generalization of the Wiener-Khintchine theorem; noise is assumed to be additive, stationary, and have an arbitrary power spectrum. This is in contrast to the SNR analysis in the literature on this subject, which is inadequate for mid-infrared RM-CW lidar as it only considers Poissonian fluctuations of the number of detected photons. In addition to regular SNR analysis, the framework derived in this dissertation allows treatment of singularities such as demodulation with an unbalanced sequence in 1/f noise. To calculate maximum lidar sensing range, the following detection limits have been considered: signal shot noise, background blackbody radiation shot noise based on the Background-Limited Photodetection (BLIP) detectivity limit, and minimum-size detector noise given by diffraction-limited focusing. The latter is found to be of greatest practical interest. Furthermore, a lidar figure of merit has been introduced, and all quantities related to lidar performance and its detection limits have been presented graphically. Since pseudo-random sequences discussed in the literature have been found highly non-optimal for most applications of RM-CW lidar, a framework for the construction of new pseudo-random sequences of desired

  8. Investigating a Hypothetical Semiconductor Laser Bar with a Damaged Single Emitter Using a Laser Diode Simulation/Emulation Tool

    Directory of Open Access Journals (Sweden)

    C.K. Amuzuvi

    2014-02-01

    Full Text Available This study demonstrates the use of Barlase, a semiconductor laser diode emulation tool, to emulate the by-emitter degradation of high power semiconductor laser diodes.Barlase is software that uses a LabView control interface. In this study, a hypothetical laser diode bar (multiple emitters was used to investigate a damaged single emitter randomly located in the bar and its behavior analyzed within the bar. It should however, be noted that, this scenario is valid for devices at the start of the aging process only. When all other relevant effects that affect the performance of laser diodes bars are allowed to interact over time, high levels of defects can also play important role in the degradation process. The results of this simulation scenario show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

  9. Applications of confocal laser scanning microscopy in research into organic semiconductor thin films

    DEFF Research Database (Denmark)

    Schiek, Manuela; Balzer, Frank

    2014-01-01

    At the center of opto-electronic devices are thin layers of organic semiconductors, which need to be sandwiched between planar electrodes. With the growing demand for opto-electronic devices now and in the future, new electrode materials are needed to meet the requirements of organic semiconductors...... laser scanning microscopy has emerged as a versatile tool for optical metrology while atomic force microscopy adds detailed structural information....

  10. High-power optically pumped semiconductor laser apllications

    Science.gov (United States)

    Morioka, S. Brandon

    2011-03-01

    OPS lasers have found applications in various industrial and scientific laser applications due to their power scaling capability, their wide range of emission wavelengths, physical size and their superior reliability. This paper provides an overview of commercially available OPS lasers and the applications in which they are used including biotechnology, medical, holography, Titanium-Sapphire laser pumping, non-lethal defense, forensics, and entertainment.

  11. SEMICONDUCTOR DEVICES Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

    Science.gov (United States)

    Lan, Rao; Guofeng, Song; Lianghui, Chen

    2010-10-01

    In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with non-destructive tests.

  12. Modulation Response of Semiconductor Quantum Dot Nanocavity Lasers

    DEFF Research Database (Denmark)

    Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble.......The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble....

  13. Controlling Chaos in a Semiconductor Laser via Weak Optical Positive Feedback and Modulating Amplitude

    Institute of Scientific and Technical Information of China (English)

    YAN Sen-Lin

    2007-01-01

    Numerical analysis of weak optical positive feedback (OPF) controlling chaos is studied in a semiconductor laser.The physical model of controlling chaos produced via modulating the current of semiconductor laser is presented under the condition of OPF.We find the physical mechanism that the nonlinear gain coefficient and linewidth enhancement factor of the laser are affected by OPF so that the dynamical behaviour of the system can be efficiently controlled.Chaos is controlled into a single-periodic state,a dual-periodic state,a fri-periodic state,a quadr-periodic state,a pentaperiodic state,and the laser emitting powers are increased by OPF in simulations.Lastly,another chaos-control method with modulating the amplitude of the feedback light is presented and numerically simulated to control chaotic laser into multi-periodic states.

  14. Thermally robust semiconductor optical amplifiers and laser diodes

    Science.gov (United States)

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  15. Fast random number generation with spontaneous emission noise of a single-mode semiconductor laser

    Science.gov (United States)

    Zhang, Jianzhong; Zhang, Mingjiang; Liu, Yi; Li, Pu; Yi, Xiaogang; Zhang, Mingtao; Wang, Yuncai

    2016-11-01

    We experimentally demonstrate a 12.5 Gb s-1 random number generator based on measuring the spontaneous emission noise of a single-mode semiconductor laser. The spontaneous emission of light is quantum mechanical in nature and is an inborn physical entropy source of true randomness. By combining a high-speed analog-to-digital converter and off-line processing, random numbers are extracted from the spontaneous emission with the verified randomness. The generator is simple, robust, and with no need of accurately tuning the comparison threshold. The use of semiconductor lasers makes it particularly compatible with the delivery of random numbers in optical networks.

  16. Analysis of Semi-conductor Laser Diode with Two-dimension Nonlinearly Tapered Waveguide

    Institute of Scientific and Technical Information of China (English)

    LI Hong; HAUNG Dexiu

    2001-01-01

    A novel semiconductor laser diode with a two-dimension nonlinearly tapered waveguide is proposed and its property is studied by Fourier expanding method. It is shown that coupling loss between the semiconductor laser diode and a single mode fiber is reduced effectively, the reduction role of the nonlinearly tapered waveguide is more apparent than that of a linearly tapered waveguide , the minimum coupling loss is 0.36 dB, and the far field divergence is decreased. The reduction mechanism is discussed.

  17. Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Petersen, Paul Michael; Tromborg, Bjarne

    2007-01-01

    We present a theoretical analysis of the lateral modes of a broad-area semiconductor laser. The structure of the modes are classified into four categories and the modes are traced in the frequency versus pump rate diagram. It is shown how the branches of the frequency tuning curves for the differ......We present a theoretical analysis of the lateral modes of a broad-area semiconductor laser. The structure of the modes are classified into four categories and the modes are traced in the frequency versus pump rate diagram. It is shown how the branches of the frequency tuning curves...

  18. Particle-free semiconductor cutting using the water jet guided laser

    Science.gov (United States)

    Perrottet, Delphine; Spiegel, Akos; Wagner, Frank; Housh, Roy; Richerzhagen, Bernold; Manley, John

    2005-04-01

    For many years, wafer cutting has posed a challenge to laser-based cutting techniques because of the brittle nature of semiconductors and the exacting requirements for cleanliness. Since conventional laser cutting generates a strong heat-affected zone and a large amount of particles, abrasive sawing is currently the standard process for semiconductor wafer dicing. However, abrasive sawing can no longer fulfill the demands of new, emerging types of semiconductor devices like those based on thin wafers and compound semiconductors. New separation methods are investigated here. The water jet guided laser is a relatively recent technology that offers not only a significantly reduced heat-affected zone but also a cleaner wafer surface. This is due, first, to the water jet, which cools the material between the laser pulses and removes a significant amount of molten material generated by laser ablation. However, the system has recently been upgraded by adding a device that covers the entire wafer surface with a well-controlled thin water film throughout the cutting process. The few generated particles are thus kept in suspension and will not deposit on the wafer surface.

  19. Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

    Science.gov (United States)

    Rosinski, M.; Badziak, B.; Parys, P.; Wołowski, J.; Pisarek, M.

    2009-03-01

    The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:˜0.5 J, power density: 10 10 W/cm 2) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES.

  20. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized.......We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  1. Tolerances for Phase Locking of Semiconductor Laser Arrays.

    Science.gov (United States)

    1988-04-18

    laser fabrication . This means that the starting material is critically important to tne success of locked laser arrays. F. TOLERANCE REQUIREMENTS ON...typically r , 0.1. Because Eq. (7) represents a small frequency deviation, and implies A - 0.5 4, this report will look into the tolerances on laser ... fabrication and operation to ensure that the free-running laser frequencies remain within this locking range. D. COMPARISON OF LOCKING CONDITION WITH

  2. Laser drilling of via micro-holes in single-crystal semiconductor substrates using a 1070 nm fibre laser with millisecond pulse widths

    OpenAIRE

    Maclean, Jessica O.; Hodson, Jonathan R.; Voisey, K.T.

    2015-01-01

    Micro-machining of semiconductors is relevant to fabrication challenges within the semiconductor industry. For via holes for solar cells, laser drilling potentially avoids deep plasma etching which requires sophisticated equipment and corrosive, high purity gases. Other applications include backside loading of cold atoms into atom chips and ion traps for quantum physics research, for which holes through the semiconductor substrate are needed. Laser drilling, exploiting the melt ejection mater...

  3. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    Science.gov (United States)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  4. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    Institute of Scientific and Technical Information of China (English)

    LI Nian-Qiang; PAN Wei; YAN Lian-Shan; LUO Bin; XU Ming-Feng; TANG Yi-Long

    2012-01-01

    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series.The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically.Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers.More importantly,in both unsynchronized and good synchronization regimes,the STE can be used to quantify the direction of information flow between the lasers,although the former case leads to a better identification.The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems.

  5. High-coherent-power, two-dimensional grating surface-emitting (GSE) semiconductor lasers

    Science.gov (United States)

    Li, Shuang

    High-power semiconductor lasers, with coherent radiation, are attractive sources for many applications. However, achieving stable, coherent radiation to watt-range power from monolithic semiconductor lasers has been a challenge. This work covers the study and development of high power coherent semiconductor lasers employing novel-types of both surface-emitting and edge-emitting structures. Surface-emitting (SE) semiconductor lasers are preferred over edge-emitting lasers due to their inherent reliability, scalability, and packaging advantages. Horizontal-cavity, grating SE semiconductor lasers are promising candidates for high-power coherent sources. Here we present the design and analysis of a two-dimensional (2D) horizontal-cavity GSE laser (so called ROW-SEDFB laser), for which 2nd-order, distributed feedback/distributed Bragg reflector (DFB/DBR) gratings with central pi phaseshift are preferentially placed in the element regions of a resonant-optical-waveguide (ROW) structure. We find that beside their usual functions (feedback and outcoupling), the gratings act as an effective array-mode selector. The in-phase mode is strongly favored to lase around its resonance due both to better field overlap with the active-grating (i.e., DFB) and to lower interelement loss than the other array modes. For 20-element arrays with 700/600mum-long DFB/DBR gratings, and of 100mum-wide lateral dimension, high intermodal discrimination is obtained. The primary mechanisms behind this discrimination are found to be: absorption losses for the interelement field to the metal contact and to a semiconductor/metal grating layer, and the longitudinal guided-field overlap with the DFB region. The discrimination can be further enhanced by introducing free-carrier absorption in the interelement regions. The device has relatively uniform guided-field profiles in both lateral and longitudinal directions and a strong built-in index profile in the lateral direction. These features make the ROW

  6. Spatial distribution of the intensity noise of a vertical-cavity surface-emitting semiconductor laser.

    Science.gov (United States)

    Bramati, A; Hermier, J P; Khoury, A Z; Giacobino, E; Schnitzer, P; Michalzik, R; Ebeling, K J; Poizat, J P; Grangier, P

    1999-07-01

    We studied anticorrelated quantum fluctuations between the TEM(00) and the TEM(01) transverse modes of a vertical-cavity surface-emitting semiconductor laser by measuring the transverse spatial distribution of the laser beam intensity noise. Our experimental results are found to be in good agreement with the predictions of a phenomenological model that accounts for quantum correlations between transverse modes in a light beam.

  7. Simple laser velocimeter that uses photoconductive semiconductors to measure optical frequency differences.

    Science.gov (United States)

    Wang, C C; Davidson, F; Trivedi, S

    1995-10-01

    The dc photocurrents generated by steady-state moving space-charge fields inside photoconductive semiconductors containing deep level donors and traps can be used to determine the relative frequency differences between the two interfering optical fields that establish the space-charge fields. A simple laser velocimeter that uses a semi-insulating GaAs:Cr sample to detect the Doppler frequency shift between two laser beams is demonstrated.

  8. Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtosecond and Picosecond Laser Techniques.

    Science.gov (United States)

    1983-05-05

    This report summarizes the research progress achieved in the period 1979-1982 in the research effort supported by AFOSR 80-0079. Two main areas of research are: picosecond and subpicosecond laser development and application and time-resolved studies of semiconductors. In the subpicosecond laser development program we investigated a variety of cavities of different physical parameters. A stable and reliable oscillator, which produces 200 fsec pulses, has been developed using

  9. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yang; Ye Nan; Wang Baojun; Zhou Daibing; An Xin; Bian Jing; Pan Jiaoqing; Zhao Lingjuan; Wang Wei, E-mail: matsu@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-07-15

    High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.

  10. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    Science.gov (United States)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-11-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  11. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    Science.gov (United States)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

  12. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    Science.gov (United States)

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

  13. Study of the emission spectra of a 1320-nm semiconductor disk laser and its second harmonic

    Science.gov (United States)

    Gochelashvili, K. S.; Derzhavin, S. I.; Evdokimova, O. N.; Zolotovskii, I. O.; Podmazov, S. V.

    2016-03-01

    The spectral characteristics of an optically pumped external-cavity semiconductor disk laser near λ = 1320 nm are studied experimentally. Intracavity second harmonic generation is obtained using an LBO nonlinear crystal. The output power at a wavelength of 660 nm in the cw regime was 620 mW, and the peak power in the pulsed regime was 795 mW.

  14. High-power single-transverse-mode ridge optical waveguide semiconductor lasers

    NARCIS (Netherlands)

    Popovichev, VV; Davydova, EI; Marmalyuk, AA; Simakov, A; Uspenskii, MB; Chel'nyi, AA; Bogatov, AP; Drakin, AE; Plisyuk, SA; Sratonnikov, AA

    2002-01-01

    More than 200 mW of a single-transverse-mode cw output power is obtained from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. e laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 x 10(7) W cm(-2) sr(-1). The calculated and

  15. Prediction of the gain versus injection-current characteristic of individual semiconductor laser amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Binder, J.O. (ANT Nachrichtentechnik GmbH, Abt. E331, D-7150 Backnang (DE)); Cormack, G.D. (Alberta Telecommunications Research Centre, Alberta T6E 5Y4 (CA))

    1990-07-01

    The gain versus current characteristic of individual semiconductor laser traveling wave amplifiers is shown to be predictable from data obtained during the anti-reflection coating procedure, namely light versus current curves and the residual reflectivity of the first-coated facet.

  16. Picosecond pulse generation from a synchronously pumped mode-locked semiconductor laser diode

    Science.gov (United States)

    Auyeung, J. C.; Johnston, A. R.

    1982-01-01

    A semiconductor laser diode was mode locked in an external cavity when synchronously pumped with 90-ps current pulses. Transform-limited optical pulses with a 10-ps pulse width and a peak power of 160 mW were produced. Operating characteristics of such a system are described.

  17. Performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Skovgaard, P.M.W.; Mørk, Jesper;

    2002-01-01

    We have experimentally investigated the performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers. We have measured the magnitude of trailing pulses when varying the chip length and studied the pulse quality when changing the driving conditions...

  18. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus

    1976-01-01

    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  19. Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous Emission

    Institute of Scientific and Technical Information of China (English)

    WU Lin-Zhang; TIAN Wei; GAO Feng

    2004-01-01

    For characterization of semiconductor lasers, quasi-Fermi-level separation is a critical parameter due to its relationship with carrier density and gain. We suggest a new technique to determine the quasi-Fermi-level separation from amplified spontaneous emission measured from one facet.

  20. Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

    Science.gov (United States)

    Ye, Nan; Liu, Yang; Wang, BaoJun; Zhou, DaiBing; Pang, JiaoQing; Zhao, LingJuan; Wang, Wei

    2011-01-01

    More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are used to suppress reflection.

  1. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin;

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  2. Carrier recovery techniques for semiconductor laser frequency noise for 28 Gbd DP-16QAM

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Piels, Molly

    2015-01-01

    We report on the first experimental comparison of DD-PLL, two-stage feed forward, and two variations of extended Kalman filtering for tracking semiconductor laser frequency noise. We identify which carrier phase recovery technique works best depending on the carrier induced frequency noise profile....

  3. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

    1988-01-01

    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

  4. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived...

  5. Effect of light backscattering on high-speed modulation performance in strongly injection-locked unidirectional semiconductor ring lasers

    Science.gov (United States)

    Smolyakov, Gennady A.; Osinski, Marek

    2014-03-01

    Greatly enhanced high-speed modulation performance has been recently predicted in numerical calculations for a novel injection-locking scheme involving a DBR or DFB master laser monolithically integrated with a unidirectional semiconductor microring laser. In this work, we investigate the effect of light backscattering between the two counterpropagating modes on high-speed modulation performance of strongly injection-locked unidirectional semiconductor microring lasers.

  6. Spatial and Spectral Brightness Enhancement of High Power Semiconductor Lasers

    Science.gov (United States)

    Leidner, Jordan Palmer

    The performance of high-power broad-area diode lasers is inhibited by beam filamentation induced by free-carrier-based self-focusing. The resulting beam degradation limits their usage in high-brightness, high-power applications such as pumping fiber lasers, and laser cutting, welding, or marking. Finite-difference propagation method simulations via RSoft's BeamPROP commercial simulation suite and a custom-built MATLAB code were used for the study and design of laser cavities that suppress or avoid filamentation. BeamPROP was used to design a tapered, passive, multi-mode interference cavity for the creation of a self-phase-locking laser array, which is comprised of many single-mode gain elements coupled to a wide output coupler to avoid damage from local high optical intensities. MATLAB simulations were used to study the effects of longitudinal and lateral cavity confinement on lateral beam quality in conventional broad-area lasers. This simulation was expanded to design a laser with lateral gain and index prescription that is predicted to operate at or above state-of-the-art powers while being efficiently coupled to conventional telecom single-mode optical fibers. Experimentally, a commercial broad-area laser was coupled in the far-field to a single-mode fiber Bragg grating to provide grating-stabilized single-mode laser feedback resulting in measured spectral narrowing for efficient pump absorption. Additionally a 19 GHz-span, spatially resolved, self-heterodyne measurement was made of a broad-area laser to study the evolution/devolution of the mode content of the emitted laser beam with increasing power levels.

  7. Doppler wind lidar using a MOPA semiconductor laser at stable single-frequency operation

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2009-01-01

    A compact master-oscillator power-amplifier semiconductor laser (MOPA-SL) is a good candidate for a coherent light source (operating at 1550 nm) in a Doppler wind Lidar. The MOPA-SL requires two injection currents: Idfb for the distributed-feedback (DFB) laser section (master oscillator) and Iamp...... to the laser. This was done by observing the spectral characteristic of the laser using an optical spectrum at different drive current combinations. When using the laser for a Doppler wind Lidar application, a combination of (Idfb, Iamp) which is close to the center of an identified stable single......-frequency regime is used. The current settings for the laser result in a highly stable Lidar as shown by a 5-day long continuous measurement of the Doppler shift produced by a constantly rotating diffusely reflecting target....

  8. Accuracy of Petermann's K-factor in the theory of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    El Mashade, M.B.; Arnaud, J.

    1986-04-01

    Petermann has proposed that the classical formula for the linewidth of a laser be multiplied by a factor K >> 1 in the case of gain-guided semiconductor lasers. The concept of power in the mode used by that author, however, is not well defined in a waveguide with gain, and his theory is therefore opened to question. The analysis given here avoids this difficulty and nevertheless agrees with Petermann's result. This is because spatial mode filtering is strong in oscillating lasers.

  9. Experimental study on apoptosis induced by semiconductor laser to hair removal and armpit odor treatment

    Science.gov (United States)

    Shi, Hongmin; Yan, Min; Zhang, Meijue

    2005-07-01

    Objective: To observe and explore the effects and mechanism of apoptosis on canine induced by Laser. Try to find a new approach to treat of armpit odor with no traumatism. Method: We used different power of semiconductor Laser to irradiate the black hair canine to observe and evaluate the tissue effects with electroscope, flow cytometry and Tunel technique at different period of time after irradiation. Result: The apoptosis has been observed within the hair follicle cells and apocrine gland cells after irradiation. After repeat irradiation in low power level, more apoptosis has been observed. Conclusion: Apoptosis exists in hair follicle cells and apocrine gland cells after Laser irradiation.

  10. Single-sideband photonic microwave generation with an optically injected quantum-dot semiconductor laser.

    Science.gov (United States)

    Chen, Chih-Ying; Cheng, Chih-Hao; Lin, Fan-Yi

    2016-12-26

    We studied single-sideband (SSB) photonic microwave generation with a high sideband rejection ratio (SRR) based on the period-one dynamical states of an optically injected quantum-dot (QD) semiconductor laser and demonstrated that the SSB signals have SRRs of approximately 15 dB higher than those generated with a conventional quantum-well semiconductor laser under conditions of optimal microwave power. The enhancement of SRR in the QD laser, which is important in mitigating the power penalty effect in applications such as radio-over-fiber optical communications, could be primarily attributed to a lower carrier decay rate in the dots, smaller linewidth enhancement factor, and reduced photon decay rate.

  11. Nanosecond laser-induced periodic surface structures on wide band-gap semiconductors

    Science.gov (United States)

    Sanz, Mikel; Rebollar, Esther; Ganeev, Rashid A.; Castillejo, Marta

    2013-08-01

    In this work we report on fabrication of laser-induced periodic surface structures (LIPSS) on different semiconductors with bandgap energies in the range of 1.3-3.3 eV and melting temperatures from 1100 to 2700 °C. In particular, InP, GaAs, GaP and SiC were irradiated in air with nanosecond pulses using a linearly polarized laser beam at 266 nm (6 ns pulse width). The nanostructures, inspected by atomic force microscopy, are produced upon multiple pulse irradiation at fluences near the ablation threshold. LIPSS are perpendicular to the laser polarization direction and their period is of the order of the irradiation wavelength. It was observed that the accumulative effect of both fluence and number of pulses needed for LIPSS formation increased with the material bandgap energy. These results, together with estimations of surface temperature increase, are discussed with reference to the semiconductor electrical, optical and thermal properties.

  12. Nanosecond laser-induced periodic surface structures on wide band-gap semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sanz, Mikel, E-mail: mikel.sanz@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Rebollar, Esther [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Ganeev, Rashid A. [Voronezh State University, Voronezh 394006 (Russian Federation); Castillejo, Marta [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain)

    2013-08-01

    In this work we report on fabrication of laser-induced periodic surface structures (LIPSS) on different semiconductors with bandgap energies in the range of 1.3–3.3 eV and melting temperatures from 1100 to 2700 °C. In particular, InP, GaAs, GaP and SiC were irradiated in air with nanosecond pulses using a linearly polarized laser beam at 266 nm (6 ns pulse width). The nanostructures, inspected by atomic force microscopy, are produced upon multiple pulse irradiation at fluences near the ablation threshold. LIPSS are perpendicular to the laser polarization direction and their period is of the order of the irradiation wavelength. It was observed that the accumulative effect of both fluence and number of pulses needed for LIPSS formation increased with the material bandgap energy. These results, together with estimations of surface temperature increase, are discussed with reference to the semiconductor electrical, optical and thermal properties.

  13. Chaos synchronization based on a continuous chaos control method in semiconductor lasers with optical feedback.

    Science.gov (United States)

    Murakami, A; Ohtsubo, J

    2001-06-01

    Chaos synchronization using a continuous chaos control method was studied in two identical chaotic laser systems consisting of semiconductor lasers and optical feedback from an external mirror. Numerical calculations for rate equations indicate that the stability of chaos synchronization depends significantly on the external mirror position. We performed a linear stability analysis for the rate equations. Our results show that the stability of the synchronization is much influenced by the mode interaction between the relaxation oscillation frequency of the semiconductor laser and the external cavity frequency. Due to this interaction, an intensive mode competition between the two frequencies destroys the synchronization, but stable synchronization can be achieved when the mode competition is very weak.

  14. Bifurcation analysis of a semiconductor laser with saturable absorber and delayed optical feedback

    CERN Document Server

    Terrien, Soizic; Broderick, Neil G R

    2016-01-01

    Semiconductor lasers exhibit a wealth of dynamics, from emission of a constant beam of light, to periodic oscillations and excitability. Self-pulsing regimes, where the laser periodically releases a short pulse of light, are particularly interesting for many applications, from material science to telecommunications. Self-pulsing regimes need to produce pulses very regularly and, as such, they are also known to be particularly sensitive to perturbations, such as noise or light injection. We investigate the effect of delayed optical feedback on the dynamics of a self-pulsing semiconductor laser with saturable absorber (SLSA). More precisely, we consider the Yamada model with delay -- a system of three delay-differential equations (DDEs) for two slow and one fast variable -- which has been shown to reproduce accurately self-pulsing features as observed in SLSA experimentally. This model is also of broader interest because it is quite closely related to mathematical models of other self-pulsing systems, such as e...

  15. Semiconductor defect metrology using laser-based quantitative phase imaging

    Science.gov (United States)

    Zhou, Renjie; Edwards, Chris; Popescu, Gabriel; Goddard, Lynford

    2015-03-01

    A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.

  16. A semiconductor injection-switched high-pressure sub-10-picosecond carbon dioxide laser amplifier

    Science.gov (United States)

    Hughes, Michael Kon Yew

    A multiatmospheric-pressure-broadened CO2 laser amplifier was constructed to amplify sub-10-picosecond pulses generated with semiconductor switching. High-intensity, mid-infrared, amplified pulses have many applications: especially in fields such as non-linear optics, laser-plasma interaction, and laser particle acceleration. The injected pulses are produced by exciting GaAs (or an engineered, fast-recombination time semiconductor) with an ultrafast visible laser pulse to induce transient free carriers with sufficient density to reflect a co-incident hybrid-CO2 laser pulse. The short pulse is injected directly into the regenerative amplifier cavity from an intra-cavity semiconductor switch. The CO2-gas-mix amplifier is operated at 1.24 MPa which is sufficient to collisionally broaden the individual rotational spectral lines so that they merge to produce a gain spectrum wide enough to support pulses less than 10 ps long. After sufficient amplification, the pulse is switched out with another semiconductor switch pumped with a synchronized visible-laser pulse. This system is demonstrated and analysed spectrally and temporally. The pulse-train spectral analysis is done for a GaAs-GaAs double-switch arrangement using a standard spectrometer and two HgCdTe detectors; one of which is used for a reference signal. An infrared autocorrelator was designed and constructed to temporally analyse the pulse trains emerging from the amplifier. Interpretation of the results was aided by the development of a computer model for short-pulse amplification which incorporated saturation effects, rotational- and vibrational-mode energy redistribution between pulse round trips, and the gain enhancement due to one sequence band. The results show that a sub-10-picosecond pulse is injected into the cavity and that it is amplified with some trailing pulses at 18 ps intervals generated by coherent effects. The energy level reached, estimated through modelling, was >100 mJ/cm2.

  17. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems

    Science.gov (United States)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  18. Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

    Science.gov (United States)

    Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

    2017-02-01

    Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

  19. Phase solitons and domain dynamics in an optically injected semiconductor laser

    CERN Document Server

    Gustave, F; Tissoni, G; Brambilla, M; Prati, F; Barland, S

    2016-01-01

    We analyze experimentally and theoretically the spatio-temporal dynamics of a highly multimode semiconductor laser with coherent optical injection. Due to the particular geometry of the device (a 1~m long ring cavity), the multimode dynamics can be resolved in real time and we observe stable chiral solitons and domain dynamics. The experiment is analyzed in the framework of a set of effective semiconductor Maxwell-Bloch equations. We analyze the stability of stationary solutions and simulate both the complete model and a reduced rate equation model. This allows us to predict domain shrinking and the stability of only one chiral charge that we ascribe to the finite active medium response time.

  20. Spatially nondegenerate four-wave mixing in a broad area semiconductor laser: Modeling

    DEFF Research Database (Denmark)

    Jensen, Søren Blaaberg; Tromborg, Bjarne; Petersen, P. M.

    coupled equations for the field components in the cavity and a rate equation is used to describe the carrier density of the semiconductor material. The interference pattern of the four field components inside the cavity induces a periodic spatial modulation of the carrier density and thus of the complex......We present a numerical model of spatially nondegenerate four-wave mixing in a bulk broad area semiconductor laser with an external reflector and a spatial filter. The external reflector provides a feedback with an off-aixs direction of propagation. Such a configuration has experimentally been seen...

  1. Compact 2050 nm Semiconductor Diode Laser Master Oscillator Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  2. A High Reliability Frequency Stabilized Semiconductor Laser Source Project

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA needs high stability laser source of 1W output power for Lidar applications. Princeton Optronics has developed ultra-stable, narrow linewidth diode pumped solid...

  3. Semiconductor Laser Theory: The Maxwell--Bloch Equations

    Science.gov (United States)

    Gehrig, Edeltraud; Hess, Ortwin

    Because of its central importance for fundamental physics as well as for technological applications, the electronic structure of layered semiconductor structures has attracted much interest over the last two decades. In theoretical studies, methods based on the envelope function approximation are predominant, the reason being that the EFA allows a comprehensive description of electron- and hole-like states. It can cope with periodic or aperiodic geometries of quantum structures, as well as perturbations such as a magnetic field, strain, or a built-in or external potential. Details of the underlying crystal potential are included in terms of bulk band structure parameters.

  4. Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

    Energy Technology Data Exchange (ETDEWEB)

    Chow, Weng Wah Dr. (; .); Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Modine, Normand Arthur; Biefeld, Robert Malcolm

    2006-02-01

    The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.

  5. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    Science.gov (United States)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  6. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

    Science.gov (United States)

    Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

    2017-03-01

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

  7. Fast photonic information processing using semiconductor lasers with delayed optical feedback: role of phase dynamics.

    Science.gov (United States)

    Nguimdo, Romain Modeste; Verschaffelt, Guy; Danckaert, Jan; Van der Sande, Guy

    2014-04-01

    Semiconductor lasers subject to delayed optical feedback have recently shown great potential in solving computationally hard tasks. By optically implementing a neuro-inspired computational scheme, called reservoir computing, based on the transient response to optical data injection, high processing speeds have been demonstrated. While previous efforts have focused on signal bandwidths limited by the semiconductor laser's relaxation oscillation frequency, we demonstrate numerically that the much faster phase response makes significantly higher processing speeds attainable. Moreover, this also leads to shorter external cavity lengths facilitating future on-chip implementations. We numerically benchmark our system on a chaotic time-series prediction task considering two different feedback configurations. The results show that a prediction error below 4% can be obtained when the data is processed at 0.25 GSamples/s. In addition, our insight into the phase dynamics of optical injection in a semiconductor laser also provides a clear understanding of the system performance at different pump current levels, even below solitary laser threshold. Considering spontaneous emission noise and noise in the readout layer, we obtain good prediction performance at fast processing speeds for realistic values of the noise strength.

  8. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    Science.gov (United States)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  9. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

    Science.gov (United States)

    Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

    2017-01-01

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

  10. Dynamics of semiconductor microring lasers subject to on-chip filtered optical feedback

    Science.gov (United States)

    Khoder, Mulham; Friart, Gaetan; Danckaert, Jan; Erneux, Thomas; Van der Sande, Guy; Verschaffelt, Guy

    2016-04-01

    Tunable laser diodes are needed in a range of applications including wavelength division multiplexing, optical instrument testing, optical sensing and tera hertz generation. In this work, we investigate the stability of lasers which use filtered optical feedback for wavelength tuning. We investigate experimentally the dynamics induced by this on-chip filtered optical feedback. In this study, we choose to use a compact device which combines a semiconductor ring laser with on-chip filtered optical feedback to achieve wavelength tunability. The filtered optical feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback of each wavelength channel independently. Experimental observations show that the stability of the clockwise and counterclockwise propagation modes depends on the feedback strength. Experiments also show that for a specific range of the feedback strength, anti-phase oscillations in the intensity of the clockwise and counterclockwise propagating modes can be induced. These oscillations could not be seen in the same semiconductor ring laser without filtered optical feedback. We investigate how the frequency and the amplitude of these oscillations change under the effect of filtered optical feedback. We also discuss how these anti-phase oscillations can be suppressed by properly choosing the feedback strength.

  11. Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Rosinski, M. [Institute of Plasma Physics and Laser Microfusion, P.O. Box 49, Hery Street 23, 00-908 Warsaw (Poland)], E-mail: rosinski@ifpilm.waw.pl; Badziak, B.; Parys, P.; Wolowski, J. [Institute of Plasma Physics and Laser Microfusion, P.O. Box 49, Hery Street 23, 00-908 Warsaw (Poland); Pisarek, M. [Warsaw University of Technology, Material Science and Engineering Faculty, Warsaw (Poland)

    2009-03-01

    The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:{approx}0.5 J, power density: 10{sup 10} W/cm{sup 2}) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES.

  12. A Study on Photothermal Waves in a Semiconductor Material Photogenerated by a Focused Laser Beam

    Science.gov (United States)

    Abbas, Ibrahim A.; Aly, K. A.

    2016-11-01

    In this work, the theory of coupled plasma, thermal and elastic waves were used to investigate the wave propagation on semiconductor material during photo-thermo-elastic process. A thin slim strip (TSS) medium, elastic semiconductor with isotropic and homogeneous thermal and elastic properties have been considered. The plasma, thermal and elastic waves in a TSS photo generated by a focused and intensity modulated laser beam were analyzed. Laplace transform techniques and eigenvalue approach were used to obtain the analytical solutions for carrier density, displacement, temperature, and stress. Numerical computations have been carried out on silicon-like semiconductor material. The results are presented graphically to show the effect of the coupling between the plasma, thermal, and elastic waves.

  13. Theory of Passively Mode-Locked Photonic Crystal Semiconductor Lasers

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We report the first theoretical investigation of passive mode-locking in photonic crystal mode-locked lasers. Related work has investigated coupled-resonator-optical-waveguide structures in the regime of active mode-locking [Opt. Express 13, 4539-4553 (2005)]. An extensive numerical investigation...... of the influence of key parameters of the active sections and the photonic crystal cavity on the laser performance is presented. The results show the possibility of generating stable and high quality pulses in a large parameter region. For optimized dispersion properties of the photonic crystal waveguide cavity......, the pulses have sub picosecond widths and are nearly transform limited....

  14. Direct laser fabrication of nanowires on semiconductor surfaces

    Science.gov (United States)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    Periodic nanowires are observed from (001) orientation of Si and GaAs when the surfaces are irradiated interferentially by high power laser pulses. These nanowires are self-assembled and can be strain-free while their period is consistent with interference period. The nanowire morphologies are studied by atomic force microscopy. The observed period between nanowires depends on the wavelengths used and interference angle. The nanowire width increases with laser intensity. The narrowest nanowires observed have the width smaller than 20 nm, which is more than 10 times smaller than the interference period.

  15. Dynamics of carrier recombination in a semiconductor laser structure

    Energy Technology Data Exchange (ETDEWEB)

    Dzhioev, R. I., E-mail: dzhioev@orient.ioffe.ru; Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  16. Slow axis collimation lens with variable curvature radius for semiconductor laser bars

    Science.gov (United States)

    Xiong, Ling-Ling; Cai, Lei; Zheng, Yan-Fang; Liu, Hui; Zhang, Pu; Nie, Zhi-Qiang; Liu, Xing-Sheng

    2016-03-01

    Based on Snell's law and the constant phase in the front of optical field, a design method of the slow axis collimation lens with variable curvature radius is proposed for semiconductor laser bars. Variable radius of the collimator is designed by the transmission angle, and it is demonstrated that the collimator has good beam collimation ability by material with low refractive index. Resorting to the design thought of finite element method, the surface of the collimator has been divided, and it is feasible to be fabricated. This method is applied as an example in collimation of a 976 nm semiconductor laser bar. 6 mrad divergence angle of collimated beam at slow axis is realized by the designed collimation lens with refraction index of 1.51.

  17. Low-noise Raman fiber amplifier pumped by semiconductor disk laser.

    Science.gov (United States)

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Okhotnikov, O G

    2011-03-28

    A 1.3 µm Raman fiber amplifier pumped by 1.22 µm semiconductor disk laser in co-propagation geometry is demonstrated. Measured relative intensity noise of -148 dB/Hz over frequency range up to 3.5 GHz was measured at 900 mW of pump power. 9 dB gain was achieved with co-propagating pumping geometry with less than 2 dB additional noise induced by amplifier to the signal. Nearly shot-noise-limited operation of semiconductor disk laser combined with the diffraction-limited beam allows for efficient core-pumping of the single-mode fiber Raman amplifiers and represents a highly practical approach which takes full advantage of co-propagating pumping.

  18. Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

    Science.gov (United States)

    Tao, Yufeng; Wang, Ming; Xia, Wei

    2016-06-01

    A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

  19. Topological insight into the non-Arrhenius mode hopping of semiconductor ring lasers

    CERN Document Server

    Beri, S; Mestre, M; Van der Sande, G; Verschaffelt, G; Scire, A; Mezosi, G; Sorel, M; Danckaert, J; 10.1103/PhysRevLett.101.093903

    2009-01-01

    We investigate both theoretically and experimentally the stochastic switching between two counter-propagating lasing modes of a semiconductor ring laser. Experimentally, the residence time distribution cannot be described by a simple one parameter Arrhenius exponential law and reveals the presence of two different mode-hop scenarios with distinct time scales. In order to elucidate the origin of these two time scales, we propose a topological approach based on a two-dimensional dynamical system.

  20. Relative Refractory Period in an Excitable Semiconductor Laser

    Science.gov (United States)

    Selmi, F.; Braive, R.; Beaudoin, G.; Sagnes, I.; Kuszelewicz, R.; Barbay, S.

    2014-05-01

    We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.

  1. Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

    Directory of Open Access Journals (Sweden)

    Kevin Schires

    2011-09-01

    Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

  2. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    Science.gov (United States)

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

  3. Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

    OpenAIRE

    Alexandrescu, R; Morjan, I.; F. Dumitrache; M. Scarisoreanu; I. Soare; Fleaca, C.; Birjega, R.; E POPOVICI; Gavrila, L; G. Prodan; Ciupina, V.; G. Filoti; Kuncser, V.; Vekas, L.

    2008-01-01

    The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3) and titania (TiO2) semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values) have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron penta...

  4. Frequency stabilization in FBG external cavity semiconductor laser based on acetylene absorption method

    Institute of Scientific and Technical Information of China (English)

    Li Zhi-quan; Su Feng-yan; Kang Li-li

    2008-01-01

    A frequency-stabilized 1.53 μm FBG external-cavity semiconductor laser by using acetylene absorption is presented and its basic principles are introduced. Graded refractive index fiber and pigtailed fiber are used in the absorption air chamber to enhance the coupling stability. The impact of the background power is eliminated by using the third-harmonic modelocking technique. A lock-in amplifier is utilized to ensure that the output laser wavelength is locked at the C2H2 absorption line of 1530.37 nm. The frequency stability reaches 10-8 within 24 h.

  5. An excitation method for a semiconductor laser and a power supply

    Energy Technology Data Exchange (ETDEWEB)

    Kadzunari, O.; Katsu, K.

    1984-02-25

    A method is patented for stabilizing the peak pulsed output power from a semiconductor laser. This method is based on using a feedback circuit. A portion of the lasting beam is recorded by a photodetector; the output signal for this photodetector is amplified by an operational amplifier and is integrated by an RC network. The voltage obtained is compared to a reference voltage and a corresponding voltage is fed to a transistor in the power supply circuit. The pumping current of the laser is modulated by a pulse from a second transistor controlled by the pulse generator.

  6. Quantum phase noise and field correlation in single frequency semiconductor laser systems

    Energy Technology Data Exchange (ETDEWEB)

    Gallion, P.; Debarge, G.

    1984-04-01

    The influence of quantum phase fluctuations which affect single frequency semiconductor lasers in various coherent detection systems is discussed in terms of photocurrent autocorrelation and spectral density functions. The general treatment given in this paper can be applied in diverse practical cases and points out the problems of phase correlation and phase matching between the two mixed optical beams. In the more general case the photocurrent spectrum is found to be composed of discrete and quasi-Lorentzian parts whose energies and spectral spreads are discussed as a function of the laser line width, the phase matching and the phase correlation between the two coherently combined fields.

  7. Development of semiconductor lasers with postgrowth adjustment of wavelength

    CERN Document Server

    Kellermann, P O

    2001-01-01

    emission wavelength is not at the gain maximum of the active region, but at the resonance between laser and surface mode. The sidemode suppression ratio (up to 29 dB) and the wavelength stability are increased essentially as compared to Fabry-Perot lasers. The wavelength was decreased by small steps of 0.2 nm in the range from 679.4 to 678.2 nm adjusted by the current thickness of the surface waveguide (reduction of the thickness 2 nm per etch step). The thermal red shift is only 0.028+/-0.002 nm/K. This dependence is small: the wavelength is stabilized by the surface mode coupling and the practically temperature independent refractive index of the surface waveguide. Additionally to the edge emission the lasers show surface emission with a beam divergence of 0.12 sup o x10 sup o. Its intensity emitted per solid angle is five times larger than at the edges. The angle of emission at the wavelength of 683.7 nm is +-47.5. It is shifted by 0.35 sup o /nm with the wavelength. The experimental results are in good ag...

  8. Tunable high-power blue external cavity semiconductor laser

    Science.gov (United States)

    Ding, Ding; Lv, Xueqin; Chen, Xinyi; Wang, Fei; Zhang, Jiangyong; Che, Kaijun

    2017-09-01

    A commercially available high-power GaN-based blue laser diode has been operated in a simple Littrow-type external cavity (EC). Two kinds of EC configurations with the grating lines perpendicular (A configuration) and parallel (B configuration) to the p-n junction are evaluated. Good performance has been demonstrated for the EC laser with B configuration due to the better mode selection effect induced by the narrow feedback wavelength range from the grating. Under an injection current of 1100 mA, the spectral linewidth is narrowed significantly down to ∼0.1 nm from ∼1 nm (the free-running width), with a good wavelength-locking behavior and a higher than 35 dB-amplified spontaneous emission suppression ratio. Moreover, a tuning bandwidth of 3.6 nm from 443.9 nm to 447.5 nm is realized with output power of 1.24 W and EC coupling efficiency of 80% at the central wavelength. The grating-coupled blue EC laser with narrow spectral linewidth, flexible wavelength tunability, and high output power shows potential applications in atom cooling and trapping, high-resolution spectroscopy, second harmonic generation, and high-capacity holographic data storage.

  9. Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation)

    Science.gov (United States)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2017-03-01

    Semiconductor disk lasers (SDLs) are attractive for applications requiring good beam quality, wavelength versatility, and high output powers. Typical SDLs utilize the active mirror geometry, where a semiconductor DBR is integrated with the active region by growth or post-growth bonding. This imposes restrictions for the SDL design, like material system choice, thermal management, and effective gain bandwidth. In DBR-free geometry, these restrictions can be alleviated. An integrated gain model predicts DBR-free geometry with twice the gain bandwidth of typical SDLs, which has been experimentally verified with active regions near 1 μm and 1.15 μm. The lift-off and bonding technique enables the integration of semiconductor active regions with arbitrary high quality substrates, allowing novel monolithic geometries. Bonding an active region onto a straight side of a commercial fused silica right angle prism, and attaching a high reflectivity mirror onto the hypotenuse side, with quasi CW pumping at 780 nm, lasing operation was achieved at 1037 nm with 0.2 mW average power at 1.6 mW average pump power. Laser dynamics show that thermal lens generation in the active region bottlenecks the laser efficiency. Investigations on total internal reflection based monolithic ring cavities are ongoing. These geometries would allow the intracavity integration of 2D materials or other passive absorbers, which could be relevant for stable mode locking. Unlike typical monolithic microchip SDLs, with the evanescent wave coupling technique, these monolithic geometries allow variable coupling efficiency.

  10. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  11. Experimental investigation of relaxation oscillations resonance in mode-locked Fabry-Perot semiconductor lasers

    CERN Document Server

    Roncin, Vincent; Hayau, Jean-François; Besnard, Pascal; Simon, Jean-Claude; Van Dijk, F; Shen, Alexandre; Duan, Guang-Hua

    2014-01-01

    We propose in this communication an experimental study of the relaxation oscillations behavior in mode-locked lasers. The semiconductor self-pulsating laser diode is composed by two gain sections, without saturable absorber. It is made of bulk structure and designed for optical telecommunication applications. This specific device allows two different regimes of optical modulation: the first one corresponds to the resonance of the relaxation oscillations and the second one, to the mode-locking regime at FSR value. This singular behavior leads us to characterize the self-pulsations which are coexisting in the laser and to describe two regimes of output modulation: the first one appears thanks to the resonance of the oscillation relaxation and the other one corresponds to the FSR of the Fabry-Perot laser at 40 GHz.

  12. Analysis of small-signal intensity modulation of semiconductor lasers taking account of gain suppression

    Indian Academy of Sciences (India)

    Moustafa Ahmed; Ali El-Lafi

    2008-07-01

    This paper demonstrates theoretical characterization of intensity modulation of semiconductor lasers (SL’s). The study is based on a small-signal model to solve the laser rate equations taking into account suppression of optical gain. Analytical forms of the small-signal modulation response and modulation bandwidth are derived. Influences of the bias current, modulation index and modulation frequency as well as gain suppression on modulation characteristics are examined. Computer simulation of the model is applied to 1.55-m InGaAsP lasers. The results show that when the SL is biased far-above threshold, the increase of gain suppression increases both the modulation response and its peak frequency. The modulation bandwidth also increases but the laser damping rate decreases. Quantitative description of the relationships of both modulation bandwidth vs. relaxation frequency and maximum modulation bandwidth vs. nonlinear gain coefficient are presented.

  13. All-electronic line width reduction in a semiconductor diode laser using a crystalline microresonator

    Science.gov (United States)

    Rury, Aaron S.; Mansour, Kamjou; Yu, Nan

    2015-07-01

    This study examines the capability to significantly suppress the frequency noise of a semiconductor distributed feedback diode laser using a universally applicable approach: a combination of a high-Q crystalline whispering gallery mode microresonator reference and the Pound-Drever-Hall locking scheme using an all-electronic servo loop. An out-of-loop delayed self-heterodyne measurement system demonstrates the ability of this approach to reduce a test laser's absolute line width by nearly a factor of 100. In addition, in-loop characterization of the laser stabilized using this method demonstrates a 1-kHz residual line width with reference to the resonator frequency. Based on these results, we propose that utilization of an all-electronic loop combined with the use of the wide transparency window of crystalline materials enable this approach to be readily applicable to diode lasers emitting in other regions of the electromagnetic spectrum, especially in the UV and mid-IR.

  14. Laser excitation induced modifications on distributed feedback microcavities using organic semiconductors

    Science.gov (United States)

    Wang, Tingting; Zhang, Xinping

    2017-06-01

    Distributed feedback (DFB) lasers can be achieved by spin-coating semiconductor polymers onto the top surface of a photoresist grating with designed periods. Optical pumping using lasers within the absorption spectrum of the polymer induced strong modification on the morphological distribution of the polymer film and consequently on the spectroscopic response of the DFB microcavities. The corresponding modification processes resulted mainly from the pump-laser-induced cross-linking of the polymer molecules, which led to the reduction in both the thickness and refractive index of the polymer layer. The location of the polymer laser was lowered from the top to the bottom surface of the DFB grating. Concise modeling on the angle-resolved tuning properties of the output spectrum of the DFB microcavity was achieved with excellent agreement with the experimental observation, which provided clear physical insights into the operation mechanisms of a DFB microcavity.

  15. Low-noise III-V metasurface based semiconductor vortex laser and rotational Doppler velocimetry

    Science.gov (United States)

    Seghilani, Mohamed; Chomet, Baptiste; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Beaudoin, Gregoire; Sagnes, Isabelle; Lalanne, Philippe; Garnache, Arnaud

    2017-03-01

    We demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis.24 We use a first order phase perturbation to introduce a weak orbital anisotropy, based on a dielectric metasurface and non-linear laser dynamics, allowing selecting vortex handedness. Moreover, similarly to linear Doppler Shift, light carrying orbital angular momentum L, scattered by a rotating object at angular velocity, experiences a rotational Doppler shift L. We show that this fundamental light matter interaction can be detected exploiting self-mixing in a vortex laser under Doppler-shifted optical feedback, with quantum noise-limited light detection.25 This will allow us to combine a velocity sensor with optical tweezers for micro-manipulation applications, with high performances, simplicity and compactness. Such high performance laser opens the path to widespread new photonic applications.

  16. Tailored surface-enhanced Raman nanopillar arrays fabricated by laser-assisted replication for biomolecular detection using organic semiconductor lasers.

    Science.gov (United States)

    Liu, Xin; Lebedkin, Sergei; Besser, Heino; Pfleging, Wilhelm; Prinz, Stephan; Wissmann, Markus; Schwab, Patrick M; Nazarenko, Irina; Guttmann, Markus; Kappes, Manfred M; Lemmer, Uli

    2015-01-27

    Organic semiconductor distributed feedback (DFB) lasers are of interest as external or chip-integrated excitation sources in the visible spectral range for miniaturized Raman-on-chip biomolecular detection systems. However, the inherently limited excitation power of such lasers as well as oftentimes low analyte concentrations requires efficient Raman detection schemes. We present an approach using surface-enhanced Raman scattering (SERS) substrates, which has the potential to significantly improve the sensitivity of on-chip Raman detection systems. Instead of lithographically fabricated Au/Ag-coated periodic nanostructures on Si/SiO2 wafers, which can provide large SERS enhancements but are expensive and time-consuming to fabricate, we use low-cost and large-area SERS substrates made via laser-assisted nanoreplication. These substrates comprise gold-coated cyclic olefin copolymer (COC) nanopillar arrays, which show an estimated SERS enhancement factor of up to ∼ 10(7). The effect of the nanopillar diameter (60-260 nm) and interpillar spacing (10-190 nm) on the local electromagnetic field enhancement is studied by finite-difference-time-domain (FDTD) modeling. The favorable SERS detection capability of this setup is verified by using rhodamine 6G and adenosine as analytes and an organic semiconductor DFB laser with an emission wavelength of 631.4 nm as the external fiber-coupled excitation source.

  17. Beamwidth for asymmetric and multilayer semiconductor laser structures

    DEFF Research Database (Denmark)

    Buus, Jens

    1981-01-01

    An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical Ga......InAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined....

  18. Electrical and optical study of semiconductor laser diodes and materials

    Science.gov (United States)

    Albin, Sacharia

    1987-01-01

    The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

  19. All-optical noninvasive chaos control of a semiconductor laser.

    Science.gov (United States)

    Schikora, S; Wünsche, H-J; Henneberger, F

    2008-08-01

    We demonstrate experimentally control of a chaotic system on time scales much shorter than in any previous study. Combining a multisection laser with an external Fabry-Perot etalon, the chaotic output transforms into a regular intensity self-pulsation with a frequency in the 10-GHz range. The control is noninvasive as the feedback from the etalon is minimum when the target state is reached. The optical phase is identified as a crucial control parameter. Numerical simulations agree well with the experimental data and uncover global control properties.

  20. A study of spatial phenomena in semiconductor lasers: Beam filamentation and optical feedback effects

    Science.gov (United States)

    Marciante, John Robert

    1997-10-01

    In an effort to improve the performance of high-power semiconductor lasers to meet the demands of applications, this thesis contains work studying the issues which limit their performance: beam filamentation and spatial feedback effects. Through computer simulations, we investigate the role of three nonlinear mechanisms which can lead to filamentation, and determine the stability boundaries of the material parameters for which the device will not exhibit filamentary tendencies. We use an analytic theory to verify these findings, and to predict the spatio- temporal nature of the filaments through an analytic expression for the gain, in which contributions of the various mechanisms can clearly be seen. We experimentally verify the spatio-temporal characteristics of the filaments, discover effects of the stripe width and transitions to chaos, and discuss how to compare the relative severity of filamentation among different devices. We propose a new method of controlling filamentation using below-bandgap semiconductor nonlinearities. With simulations, we determine under what conditions this imposed nonlinearity can counteract the carrier-induced self-focusing inside the active region. We fabricate a prototype device using new epitaxial layers containing the below-bandgap nonlinearities, and compare the performance of these new devices to a control set. In studying the spatial effects of optical feedback, we use Fresnel diffraction theory to derive an expression for the field that is reflected back into the laser. This result is applied to our computer model and used to explore the effects of feedback on narrow-stripe, broad- area, and tapered-stripe semiconductor lasers. Re- examining feedback in narrow-stripe devices through experiments and analytic theory, we investigate the coupling effects between the narrow waveguide and the feedback field, and the changes in the operating characteristics of the laser due to this coupling. We experimentally examine the beam

  1. Near-field and far-field engineering of semiconductor lasers

    Science.gov (United States)

    Yu, Nanfang

    Plasmonics focuses on the interaction between light and metallic films or nanostructures. In the last two decades, intensive research efforts were devoted to exploring the extremely broad applications of plasmonics. My research combines the versatility of plasmonics with active light sources, i.e., quantum cascade lasers (QCLs). This thesis focuses on the application of plasmonics in near-field and far-field engineering of semiconductor lasers, specifically, subwavelength focusing in the near-field, and laser beam collimation and polarization control. The first chapter of this thesis lays out fundamental materials necessary for understanding the following chapters. Systematic simulation and experimental results are presented in Chapter 2 to demonstrate that the integration of a suitably designed one dimensional or two dimensional plasmonic structures on the facet of QCLs can reduce the beam divergence by more than one order of magnitude. The devices with optimized collimators preserve a high output power, comparable to that of the unpatterned lasers. Chapter 3 demonstrates that the polarization state of the output of semiconductor lasers can be controlled by defining plasmonic structures on the laser facet. An integrated plasmonic polarizer can project the polarization of a semiconductor laser onto other directions. By patterning a facet with two orthogonal grating-aperture structures, a QCL can produce emission consisting of a superposition of a linearly and right-circularly polarized light, a first step towards a circularly-polarized laser. Chapter 4 presents experimental work on the coupled-rod antennas and the bowtie antennas patterned on the facet of QCLs. Both designs can provide an optical field confinement on the order of lambda/50 and with peak intensity on the order of 1 GW/cm2 in the antenna gap. The bowtie devices are more advanced due to better confinement of light into a single spot. Chapter 5 and 6 discuss two side research topics. Chapter 5

  2. Concealment of time delay signature of chaotic output in a slave semiconductor laser with chaos laser injection

    Science.gov (United States)

    Wu, Tianan; Sun, Weiyang; Zhang, Xiaoxu; Zhang, Shenghai

    2016-12-01

    An improved chaotic laser system, which has a slave semiconductor laser (SL) injected by a master SL with double optical feedback (DOF), is proposed, so that the time delay (TD) signature can be successfully concealed from both intensity and phase chaos via choosing appropriate parameters. The TD signature is investigated by employing autocorrelation function (ACF) and mutual information (MI) function. Through analyzing the influence on TD signature in the region of injection current and injection strength for the slave SL, we find that, for both intensity chaos and phase chaos, the TD signature can be easily concealed under weak injection strength. When the injection strength is strong, we can not only successfully conceal TD signature, but also improve the bandwidth of chaotic laser output by choosing the optimal detuning frequency.

  3. Remodulation scheme based on a two-section reflective SOA

    Science.gov (United States)

    Guiying, Jiang; Lirong, Huang

    2014-05-01

    A simple and cost-effective remodulation scheme using a two-section reflective semiconductor optical amplifier (RSOA) is proposed for a colorless optical network unit (ONU). Under proper injection currents, the front section functions as a modulator to upload the upstream signal while the rear section serves as a data eraser for efficient suppression of the downstream data. The dependences of the upstream transmission performance on the lengths and driven currents of the RSOA, the injection optical power and extinction ratio of the downstream are investigated. By optimizing these parameters, the downstream data can be more completely suppressed and the upstream transmission performance can be greatly improved.

  4. Spontaneous locking of optical vortices in coupled semiconductor lasers

    Science.gov (United States)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  5. Experimental mapping of nonlinear dynamics in synchronized coupled semiconductor laser networks

    Science.gov (United States)

    Argyris, Apostolos; Bourmpos, Michail; Syvridis, Dimitris

    2015-05-01

    The potential of conventional semiconductor lasers to generate complex and chaotic dynamics at a bandwidth that extends up to tens of GHz turns them into useful components in applications oriented to sensing and security. Specifically, latest theoretical and experimental works have demonstrated the capability of mutually coupled semiconductor lasers to exhibit a joint behaviour under various conditions. In an uncoupled network consisting of N similar SLs - representing autonomous nodes in the network - each node emits an optical signal of various dynamics depending on its biasing conditions and internal properties. These nodes remain unsynchronized unless appropriate coupling and biasing conditions apply. A synchronized behaviour can be in principle observed in sub-groups of lasers or in the overall laser network. In the present work, experimental topologies that employ eight SLs, under diverse biasing and coupling conditions, are built and investigated. The deployed systems incorporate off-the-shelf fiber-optic communications components operating at the 1550nm spectral window. The role of emission wavelength detuning of each participating node in the network - at GHz level - is evaluated.

  6. Chaotic communication in radio-over-fiber transmission based on optoelectronic feedback semiconductor lasers.

    Science.gov (United States)

    Lin, Fan-Yi; Tsai, Meng-Chiao

    2007-01-22

    Performance of chaotic communication in radio-over-fiber (ROF) transmission based on optoelectronic feedback semiconductor lasers is studied numerically. The chaotic carrier is generated by optoelectronic feedback semiconductor lasers, where chaotic communication is realized by synchronizing a receiver laser with a transmitter laser. Transmission quality of different message encoding schemes, including additive chaos modulation (ACM) and on-off shift keying (OOSK), are investigated and compared. In this study, the dispersion and nonlinearity effects in the fiber transmission module and the amplified spontaneous emission noise from the optical amplifiers are considered. In the wireless channel, effects of additive white Gaussian noise, multipath, and path loss are included. To quantitatively study the performance of this chaotic communication system in the ROF transmission, bit-error-rates (BER) of different transmission lengths, message bit-rates, and signal-to-noise ratios are studied. The optimal launched power and message strength that minimize the BER while assuring effective communication security are discussed. While the ACM scheme is shown to perform better in a fiber only configuration, the OOSK scheme shows better immunity to the random effects and waveform distortions presented in the wireless channel.

  7. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    Energy Technology Data Exchange (ETDEWEB)

    Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

    2007-12-15

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

  8. Laser drilling of via micro-holes in single-crystal semiconductor substrates using a 1070nm fibre laser with millisecond pulse widths

    Science.gov (United States)

    Maclean, Jessica O.; Hodson, Jonathan R.; Voisey, K. T.

    2015-07-01

    Micro-machining of semiconductors is relevant to fabrication challenges within the semiconductor industry. For via holes for solar cells, laser drilling potentially avoids deep plasma etching which requires sophisticated equipment and corrosive, high purity gases. Other applications include backside loading of cold atoms into atom chips and ion traps for quantum physics research, for which holes through the semiconductor substrate are needed. Laser drilling, exploiting the melt ejection material removal mechanism, is used industrially for drilling hard to machine materials such as superalloys. Lasers of the kind used in this work typically form holes with diameters of 100's of microns and depths of a few millimetres in metals. Laser drilling of semiconductors typically uses short pulses of UV or long wavelength IR to achieve holes as small as 50 microns. A combination of material processes occurs including laser absorption, heating, melting, vaporization with vapour and dust particle ejection and resolidification. An investigation using materials with different fundamental material parameters allows the suitability of any given laser for the processing of semiconductors to be determined. We report results on the characterization of via holes drilled using a 2000 W maximum power 1070 nm fibre laser with 1-20 ms pulses using single crystal silicon, gallium arsenide and sapphire. Holes were characterised in cross-section and plan view. Significantly, relatively long pulses were effective even for wide bandgap substrates which are nominally transparent at 1070 nm. Examination of drilled samples revealed holes had been successfully generated in all materials via melt ejection.

  9. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  10. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Science.gov (United States)

    Levy, Yoann; Derrien, Thibault J.-Y.; Bulgakova, Nadezhda M.; Gurevich, Evgeny L.; Mocek, Tomáš

    2016-06-01

    Formation of laser-induced periodic surface structures (LIPSS) is a complicated phenomenon which involves periodic spatial modulation of laser energy absorption on the irradiated surface, transient changes in optical response, surface layer melting and/or ablation. The listed processes strongly depend on laser fluence and pulse duration as well as on material properties. This paper is aimed at studying the spatiotemporal evolution of a periodic modulation of the deposited laser energy, once formed upon irradiation of metal (Ti) and semiconductor (Si) surfaces. Assuming that the incoming laser pulse interferes with a surface electromagnetic wave, the resulting sinusoidal modulation of the absorbed laser energy is introduced into a two-dimensional two-temperature model developed for titanium and silicon. Simulations reveal that the lattice temperature modulation on the surfaces of both materials following from the modulated absorption remains significant for longer than 50 ps after the laser pulse. In the cases considered here, the partially molten phase exists 10 ps in Ti and more than 50 ps in Si, suggesting that molten matter can be subjected to temperature-driven relocation toward LIPSS formation, due to the modulated temperature profile on the material surfaces. Molten phase at nanometric distances (nano-melting) is also revealed.

  11. Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

    Directory of Open Access Journals (Sweden)

    Mircea Guina

    2012-01-01

    Full Text Available We review the recent advances in the development of semiconductor disk lasers (SDLs producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb-based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180–1200 nm and subsequent intracavity frequency doubling to generate yellow-orange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2–3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

  12. Growth of epitaxial semiconductor alloys and superlattices with continuously variable composition by pulsed-laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    McCamy, J.W. [Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science; Lowndes, D.H. [Oak Ridge National Lab., TN (United States)

    1993-08-01

    We describe a new method to grow epitaxial semiconductor alloys with continuously variable composition, while using a single pulsed laser ablation target of fixed composition. Epitaxial ZnSe{sub 1{minus}x}S{sub x} films with continuously variable sulfur content ``x`` were grown by ablating a ZnSe target through low-pressure ambient H{sub 2}S gas. The sulfur content was easily controlled by varying the H{sub 2}S partial pressure. The composition of ZnSe{sub 1{minus}x}S{sub x} films differs by as much as x = 0.52 from the pure ZnSe target. We have used this method to grow heteroepitaxial structures with either continuously graded or periodically repeating, abrupt compositional changes (compositional superlattices). Structures that simultaneously incorporate both types of compositional modulation also have been grown. This development removes the principal barrier to convenient pulsed-laser ablation (PLA) growth of compositionally graded semiconductor thin-film materials, namely that the film and target normally have the same composition. The method appears to have broad application for PLA growth of other compound semiconductor films and heterostructures, as well as for doping individual layers.

  13. Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

    Energy Technology Data Exchange (ETDEWEB)

    Bueckers, Christina; Kuehn, Eckhard; Schlichenmaier, Christoph; Koch, Stephan W. [Department of Physics and Material Sciences Center, Philipps-University Marburg (Germany); Imhof, Sebastian; Thraenhardt, Angela [Faculty of Natural Sciences, Chemnitz University of Technology, Chemnitz (Germany); Hader, Joerg; Moloney, Jerome V. [Nonlinear Control Strategies, Inc., Tucson, AZ (United States); College of Optical Sciences, University of Arizona, Tucson, AZ (United States); Rubel, Oleg [Thunder Bay Regional Research Institute, Thunder Bay, ON (Canada); Department of Physics, Lakehead University, Thunder Bay, ON (Canada); Zhang, Wei [Centre for Biophotonics, SIPBS, University of Strathclyde, Glasgow, Scotland (United Kingdom); Ackemann, Thorsten [SUPA and Department of Physics, University of Strathclyde, Glasgow, Scotland (United Kingdom)

    2010-04-15

    This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theory-experiment comparisons are shown and it is analyzed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical-external-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Use of a laser for the spectral analysis of semiconductor materials

    Science.gov (United States)

    Karyakin, A. V.; Akhmanova, M. V.; Kaygorodov, V. A.

    1978-01-01

    Conventional applications of lasers for emission spectroscopy involving direct recording of light pulses of an evaporated substance emitted from the sample under the action of the laser light (direct method) were examined. Use of the laser light for conversion of the substance to a vapor and feeding the vapors into the conventional source of emission such as arc, sparks, etc. (the so called 2 stage excitation) were studied for use in the spectral analysis, of semiconductors. The direct method has a high reproducibility (5-7%); the 2 stage excitation method, characterized by the same intensity as obtained with the conventional constant, current arc, has better reproducibility than the direct method (15-20%). Both methods can be used for the analysis of samples without prior preparation. Advantages of these methods are the elimination of impurities picked up during trituration of the samples into powders and shortening of the analytical procedures.

  15. Athermal Annealing of Semiconductors Using Shock Waves Generated by a Laser-Plasma

    Science.gov (United States)

    Fischer, R. P.; Grun, J.; Mignogna, R.; Donnelly, D. W.; Covington, B.

    2004-07-01

    We are investigating an annealing technique in which shock or sound waves generated by a laser-plasma are used to anneal a semiconductor. The athermal annealing (AA) process occurs very rapidly, which results in almost no diffusion of. dopants. A HeNe laser is used to measure the reflectivity of the silicon as a function of time. Measurements show that the annealing occurs in 1.8 μsec, which is the acoustic time scale for waves to propagate from the focus through the AA region. A knife-edge technique is employed to study acoustic waves in the sample by measuring the deflection of the probe beam. Initial results for aluminum samples irradiated at modest laser intensities (200 mJ, 50 nsec) show well-defined surface acoustic waves. However, both silicon and GaAs have more complicated structure which resemble Lamb (plate) waves.

  16. Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings

    Energy Technology Data Exchange (ETDEWEB)

    Jayaraman, V.; Chuang, Zuon-Min; Coldren, L.A. (Univ. of California, Santa Barbara, CA (United States))

    1993-06-01

    The authors have recently demonstrated 57 nm of tuning in a monolithic semiconductor laser using conventional DBR technology with grating elements removed in a periodic fashion. This paper describes the theory and design of these sampled grating tunable lasers. They first calculate sampled grating reflectivity. They then present normalized design curves which quantify tradeoffs involved in a sampled grating DBR laser with two mismatched sampled grating mirrors. These results are applied to design example in the InP-InGaAsP system. The design example provides 70 nm tuning wile maintaining [gt]30 dB MSR, with fractional index change [Delta][mu]/[mu] [lt] 0.2% in the mirrors, and only 1 mm of total sampled grating length. Section 4 summarizes recent experimental results, and compares them to theory. They also analyze other device structures which make use of sampled gratings.

  17. Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR

    CERN Document Server

    Khurgin, Jacob B

    2015-01-01

    Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, with a prominent exception of far-IR and THz quantum cascade lasers. For these devices, however, metal waveguides already represent the state of the art, and the guiding mechanism in them has far more in common with a ubiquitous transmission line than with plasmonics.

  18. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms

    Science.gov (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

    2011-03-01

    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  19. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  20. Monte Carlo modeling of the dual-mode regime in quantum-well and quantum-dot semiconductor lasers.

    Science.gov (United States)

    Chusseau, Laurent; Philippe, Fabrice; Disanto, Filippo

    2014-03-10

    Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.

  1. Stable, continuous-wave, intracavity, optical parametric oscillator pumped by a semiconductor disk laser (VECSEL).

    Science.gov (United States)

    Stothard, D J M; Hopkins, J-M; Burns, D; Dunn, M H

    2009-06-22

    We report relaxation oscillation free, true continuous-wave operation of a singly-resonant, intracavity optical parametric oscillator (OPO) based upon periodically-poled, MgO-doped LiNbO3 and pumped internal to the cavity of a compact, optically-excited semiconductor disk laser (or VECSEL). The very short upper-laser-state lifetime of this laser gain medium, coupled with the enhancing effect of the high-finesse pump laser cavity in which the OPO is located, enables a low threshold, high efficiency intracavity device to be operated free of relaxation oscillations in continuous-wave mode. By optimizing for low-power operation, parametric threshold was achieved at a diode-laser power of only 1.4 W. At 8.5 W of diode-laser power, 205 mW of idler power was extracted, indicating a total down-converted power of 1.25 W, and hence a down-conversion efficiency of 83%.

  2. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Levy, Yoann, E-mail: levy@fzu.cz [HiLASE Centre, Institute of Physics CAS, Za Radnicí 828, 25241 Dolní Břežany (Czech Republic); Derrien, Thibault J.-Y. [HiLASE Centre, Institute of Physics CAS, Za Radnicí 828, 25241 Dolní Břežany (Czech Republic); Bulgakova, Nadezhda M. [HiLASE Centre, Institute of Physics CAS, Za Radnicí 828, 25241 Dolní Břežany (Czech Republic); S.S. Kutateladze Institute of Thermophysics SB RAS, 1 Lavrentyev ave., 630090 Novosibirsk (Russian Federation); Gurevich, Evgeny L. [Chair of Applied Laser Technologies, Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum (Germany); Mocek, Tomáš [HiLASE Centre, Institute of Physics CAS, Za Radnicí 828, 25241 Dolní Břežany (Czech Republic)

    2016-06-30

    Highlights: • The surface temperature dynamics in Ti and Si is studied upon fs laser irradiation. • To model conditions of LIPSS formation, the laser energy coupling is modulated. • Temperature modulation survives more than 10 ps in Ti and more than 50 ps in Si. • Under certain conditions, periodic nano-melting develops along the surface. - Abstract: Formation of laser-induced periodic surface structures (LIPSS) is a complicated phenomenon which involves periodic spatial modulation of laser energy absorption on the irradiated surface, transient changes in optical response, surface layer melting and/or ablation. The listed processes strongly depend on laser fluence and pulse duration as well as on material properties. This paper is aimed at studying the spatiotemporal evolution of a periodic modulation of the deposited laser energy, once formed upon irradiation of metal (Ti) and semiconductor (Si) surfaces. Assuming that the incoming laser pulse interferes with a surface electromagnetic wave, the resulting sinusoidal modulation of the absorbed laser energy is introduced into a two-dimensional two-temperature model developed for titanium and silicon. Simulations reveal that the lattice temperature modulation on the surfaces of both materials following from the modulated absorption remains significant for longer than 50 ps after the laser pulse. In the cases considered here, the partially molten phase exists 10 ps in Ti and more than 50 ps in Si, suggesting that molten matter can be subjected to temperature-driven relocation toward LIPSS formation, due to the modulated temperature profile on the material surfaces. Molten phase at nanometric distances (nano-melting) is also revealed.

  3. Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics.

    Science.gov (United States)

    Hsieh, Kun-Lin; Hung, Yu-Han; Hwang, Sheng-Kwang; Lin, Chien-Chung

    2016-05-01

    In radio-over-fiber systems, optical single-sideband (SSB) modulation signals are preferred to optical double-sideband (DSB) modulation signals for fiber distribution in order to mitigate the microwave power fading effect. However, typically adopted modulation schemes generate DSB signals, making DSB-to-SSB conversion necessary before or after fiber distribution. This study investigates a semiconductor laser at stable locking dynamics for such conversion. The conversion relies solely on the nonlinear dynamical interaction between an input DSB signal and the laser. Only a typical semiconductor laser is therefore required as the key conversion unit, and no pump or probe signal is necessary. The conversion can be achieved for a broad tunable range of microwave frequency up to at least 60 GHz. In addition, the conversion can be carried out even when the microwave frequency, the power of the input DSB signal, or the frequency of the input DSB signal fluctuates over a wide range, leading to high adaptability and stability of the conversion system. After conversion, while the microwave phase quality, such as linewidth and phase noise, is mainly preserved, a bit-error ratio down to 10-9 is achieved for a data rate up to at least 8 Gb/s with a detection sensitivity improvement of more than 1.5 dB.

  4. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Science.gov (United States)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  5. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  6. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Institute of Scientific and Technical Information of China (English)

    Min Zhao; Chang-Ye Sang; Zhen-Jun Wang; Yan-Chun Xu

    2016-01-01

    Objective:To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery.Methods:A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded.Results:The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05). The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05). The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05). The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05). The average healing time in the treatment group was significantly faster than that in the control group (P<0.05). Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  7. Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field

    Institute of Scientific and Technical Information of China (English)

    Peng Feng

    2003-01-01

    The laser-field induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field was discussed, it is shown that when the laser frequency is near to the electron cyclotron frequency, no matter how weaker the laser field is, the magnon amplification always occurs. In case of fixed laser frequency, the optical absorption of magnons obeys the definite selection rule to the laser field strength. The rate of change of magnon occupation is calculated, and the amplification condition is given.

  8. High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.

    Science.gov (United States)

    Sirbu, Alexei; Rantamäki, Antti; Saarinen, Esa J; Iakovlev, Vladimir; Mereuta, Alexandru; Lyytikäinen, Jari; Caliman, Andrei; Volet, Nicolas; Okhotnikov, Oleg G; Kapon, Eli

    2014-12-01

    We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M(2)< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs.

  9. Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

    2013-01-01

    Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated.The average output power and the threshold current are 1.8 mW and 35 mA,respectively,when the injection current of the SOA is 100 mA,with a side mode suppression ratio (SMSR) exceeding 40 dB.The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

  10. Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

    DEFF Research Database (Denmark)

    Buus, Jens; Danielsen, Magnus

    1977-01-01

    The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density...... through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal...

  11. Quantum dot semiconductor disk laser at 1.3  μm.

    Science.gov (United States)

    Rantamäki, Antti; Sokolovskii, Grigorii S; Blokhin, Sergey A; Dudelev, Vladislav V; Soboleva, Ksenia K; Bobrov, Mikhail A; Kuzmenkov, Alexander G; Vasil'ev, Alexey P; Gladyshev, Andrey G; Maleev, Nikolai A; Ustinov, Victor M; Okhotnikov, Oleg

    2015-07-15

    We present a semiconductor disk laser (SDL) emitting at the wavelength of 1.3 μm. The active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs quantum wells (QWs). An output power over 200 mW is obtained at 15°C, which represents the highest output power reported from QD-based SDLs in this wavelength range. The results demonstrate the feasibility of QD-based gain media for fabricating SDLs emitting at 1.3 μm.

  12. Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

    Science.gov (United States)

    Wołowski, J.; Badziak, J.; Czarnecka, A.; Parys, P.; Pisarek, M.; Rosinski, M.; Turan, R.; Yerci, S.

    This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP `SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 μ m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of `time-of-flight' ion diagnostics simultaneously with other diagnostic methods in dependence on laser pulse parameters, illumination geometry and target material. The properties of laser-implanted and modified SiO2 layers on sample surface were characterised with the use of different methods (XPS + ASD, Raman spectroscopy, PL spectroscopy) at the Middle East Technological University in Ankara and at the Warsaw University of Technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

  13. Pulsed-CO2-laser-induced damage mechanisms in semiconductors

    Science.gov (United States)

    Lefranc, Sebastian; Autric, Michel L.

    1998-09-01

    Laser irradiation induced damage to several materials of interest for use as 10.6 micrometer laser system windows and lenses is investigated in this paper. The irradiation source in these single shot experiments was a pulsed TEA CO2 laser (lambda equals 10.6 micrometer, (tau) pulse equals 3.5 microsecond, I equals 1 - 100 MW/cm2 onto the sample). A time resolved study of the damage process in semiconductors (Ge, ZnSe, ZnS) has been carried out during the interaction by measuring the variation of the transmitted and reflected intensity of a CO2 cw laser through the samples. An analysis of the pulse shape dependence on the damage parameters has been investigated. Results show that damages are initiated by the high power peak of the laser pulse on both surfaces and in the bulk of the materials. The damaged materials have been characterized for various incident fluences by means of optical microscopy and scanning electron microscopy in terms of morphology.

  14. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    Science.gov (United States)

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  15. Numerical analysis of thermal effects in semiconductor disk laser with TEC cooler

    Science.gov (United States)

    Zhu, Renjiang; Zhang, Peng; Jiang, Maohua

    2016-11-01

    Based on generalized heat transfer model of thermoelectric cooler(TEC), the heat management model of semiconductor disk laser with TEC cooler has been built. With finite element method, this article has calculated the temperature distribution characteristics, and studied the effects of TEC current, heat exchange coefficient, the heatsink and the pump laser for the maximum temperature of quantum wells. Calculations show that the heat transfer coefficient significantly affects the ability of the TEC temperature shift, cooling system performance which is nearly inversely proportional to the heatsink thermal conductivity is not sensitive to its the thickness variation, and the performance of oxygen-free copper with optimization of the area is close to diamond. Meanwhile the maximum temperature of the quantum well has a linear relationship with the pump power, and increasing the pump spot size is an effective way to increase the optical power output

  16. Study of multiwavelength DFB semiconductor laser array with asymmetric structures based on sampling technique.

    Science.gov (United States)

    Shi, Yuechun; Cao, Baoli; Li, Lianyan; Tang, Song; Zheng, Junshou; Zhang, Peng; Chen, Ting; Liu, Shengchun

    2014-10-10

    Multiwavelength distributed feedback (DFB) semiconductor laser arrays (MLA) with asymmetric structures are studied in this paper. Thanks to the sampling technique, the asymmetric structures, including asymmetric phase shift and asymmetric coupling coefficient, can be achieved by common holographic exposure. Therefore, the cost of fabrication is remarkably reduced. In addition, due to the large scale of the sampling pattern, the wavelength precision of these kinds of MLA can be simultaneously improved. As an example, we designed and fabricated an asymmetrically phase-shifted MLA with 10 wavelengths for the first time. Compared with the common phase-shifted DFB laser, slope efficiency is significantly improved and single longitudinal mode is still guaranteed. Besides, relatively high wavelength precision is also obtained. The proposed MLA configurations may significantly benefit multiwavelength emitters for future photonic integration.

  17. Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser

    CERN Document Server

    Moscoso-Mártir, Alvaro; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Azadeh, Saeed Sharif; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2016-01-01

    We demonstrate a complete Silicon Photonics WDM link relying on a single section semiconductor mode-locked laser and a single SOA to support up to 12 multiplexed channels with a bit error rate of 1e-12 at serial data rates of 14 Gbps without channel pre-emphasis, equalization or forward error correction. Individual channels reach error free operation at 25 Gbps and multi-channel operation at 25 Gbps is shown to be compatible with standard 7% overhead hard decision forward error correction. Silicon Photonics transmitter and receiver chips are hybridly integrated with driver and receiver electronics. A detailed link model is derived and verified. Particular emphasis is placed on accurate system level modeling of laser RIN, SOA amplified spontaneous emission noise and receiver noise. The impact of the electrical receiver bandwidth and non-Gaussian statistics on level dependent amplified spontaneous emission noise are investigated in detail. The channel count scalability as limited by SOA saturation is further an...

  18. Manipulating coherence resonance in a quantum dot semiconductor laser via electrical pumping.

    Science.gov (United States)

    Otto, Christian; Lingnau, Benjamin; Schöll, Eckehard; Lüdge, Kathy

    2014-06-02

    Excitability and coherence resonance are studied in a semiconductor quantum dot laser under short optical self-feedback. For low pump levels, these are observed close to a homoclinic bifurcation, which is in correspondence with earlier observations in quantum well lasers. However, for high pump levels, we find excitability close to a boundary crisis of a chaotic attractor. We demonstrate that in contrast to the homoclinic bifurcation the crisis and thus the excitable regime is highly sensitive to the pump current. The excitability threshold increases with the pump current, which permits to adjust the sensitivity of the excitable unit to noise as well as to shift the optimal noise strength, at which maximum coherence is observed. The shift adds up to more than one order of magnitude, which strongly facilitates experimental realizations.

  19. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured...... thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources....

  20. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode.

    Science.gov (United States)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus; Shen, Yuxin; Vanderheiden, Sylvia; Valouch, Sebastian; Vannahme, Christoph; Bräse, Stefan; Mappes, Timo; Lemmer, Uli

    2012-03-12

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources.

  1. Physical layer one-time-pad data encryption through synchronized semiconductor laser networks

    Science.gov (United States)

    Argyris, Apostolos; Pikasis, Evangelos; Syvridis, Dimitris

    2016-02-01

    Semiconductor lasers (SL) have been proven to be a key device in the generation of ultrafast true random bit streams. Their potential to emit chaotic signals under conditions with desirable statistics, establish them as a low cost solution to cover various needs, from large volume key generation to real-time encrypted communications. Usually, only undemanding post-processing is needed to convert the acquired analog timeseries to digital sequences that pass all established tests of randomness. A novel architecture that can generate and exploit these true random sequences is through a fiber network in which the nodes are semiconductor lasers that are coupled and synchronized to central hub laser. In this work we show experimentally that laser nodes in such a star network topology can synchronize with each other through complex broadband signals that are the seed to true random bit sequences (TRBS) generated at several Gb/s. The potential for each node to access real-time generated and synchronized with the rest of the nodes random bit streams, through the fiber optic network, allows to implement an one-time-pad encryption protocol that mixes the synchronized true random bit sequence with real data at Gb/s rates. Forward-error correction methods are used to reduce the errors in the TRBS and the final error rate at the data decoding level. An appropriate selection in the sampling methodology and properties, as well as in the physical properties of the chaotic seed signal through which network locks in synchronization, allows an error free performance.

  2. 1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser.

    Science.gov (United States)

    Chamorovskiy, A; Rautiainen, J; Rantamäki, A; Golant, K M; Okhotnikov, O G

    2011-03-28

    A hybrid Raman-bismuth fiber amplifier pumped in co-propagation configuration by a single 1.22 µm semiconductor disk laser is presented. The unique attribute of this dual-gain system is that both amplifiers require the pump source with the same wavelength because pump-Stokes spectral shift in 1.3 µm Raman amplifier and pump-gain bandwidth separation in 1.3 µm bismuth fiber amplifier have the same value. Residual pump power at the output of Raman amplifier in this scheme is efficiently consumed by bismuth-doped fiber thus increasing the overall conversion efficiency. The small-signal gain of 18 dB at 1.3 W of pump power has been achieved for hybrid scheme which is by 9 dB higher as compared with isolated Raman amplifier without bismuth fiber. Low noise performance of pump semiconductor disk laser with RIN of -150 dB/Hz combined with nearly diffraction-limited beam quality and Watt-level output powers allows for efficient core-pumping of a single-mode fiber amplifier systems and opens up new opportunities for amplification in O-band spectral range.

  3. Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

    Science.gov (United States)

    Moloney, Jerome V.; Kilen, Isak; Hader, Jorg; Koch, Stephan W.

    2016-03-01

    Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

  4. Selective mode coupling in microring resonators for single mode semiconductor lasers

    Science.gov (United States)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  5. Influence of pseudorandom bit format on the direct modulation performance of semiconductor lasers

    Indian Academy of Sciences (India)

    Moustafa Ahmed; Safwat W Z Mahmoud; Alaa A Mohmoud

    2012-12-01

    This paper investigates the direct gigabit modulation characteristics of semiconductor lasers using the return to zero (RZ) and non-return to zero (NRZ) formats. The modulation characteristics include the frequency chirp, eye diagram, and turn-on jitter (TOJ). The differences in the relative contributions of the intrinsic noise of the laser and the pseudorandom bit-pattern effect to the modulation characteristics are presented. We introduce an approximate estimation to the transient properties that control the digital modulation performance, namely, the modulation bit rate and the minimum (setting) bit rate required to yield a modulated laser signal free from the bit pattern effect. The results showed that the frequency chirp increases with the increase of the modulation current under both RZ and NRZ formats, and decreases remarkably with the increase of the bias current. The chirp is higher under the RZ modulation format than under the NRZ format. When the modulation bit rate is higher than the setting bit rate of the relaxation oscillation, the laser exhibits enhanced TOJ and the eye diagram is partially closed. TOJ decreases with the increase of the bias and/or modulation current for both formats of modulation.

  6. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    Science.gov (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  7. Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

    Directory of Open Access Journals (Sweden)

    R. Alexandrescu

    2008-01-01

    Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

  8. Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ren-De, E-mail: son003@sekisui.com [Research & Development Institute, High Performance Plastics Company, Sekisui Chemical Co., Ltd. 2-1 Hyakuyama, Shimamoto-Cho, Mishima-Gun, Osaka, 618-0021 (Japan); Tsuji, Takeshi [Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-Cho, Matsue, 690-8504 (Japan)

    2015-09-01

    Highlights: • Pulsed laser ablation in liquid (LAL) was applied to prepare antimony sulfide nanoparticles (Sb{sub 2}S{sub 3} NPs). • Sb{sub 2}S{sub 3} NPs with a stoichiometric composition were successfully prepared by LAL in water without using any surfactants or capping agents. • Thus-prepared Sb{sub 2}S{sub 3} NPs showed low-temperature crystallization and melting at a temperature low as 200 °C. • The NPs-coated Sb{sub 2}S{sub 3} thin film showed comparable semiconductor properties (carrier mobility and carrier density) to the vacuum deposited one. • Byproducts such as CS{sub 2}, CH{sub 4} and CO were detected by GC-MS analysis when LAL was performed in organic solvent. • The LAL-induced decomposition mechanism of Sb{sub 2}S{sub 3} and organic solvents was discussed based on the GC-MS results. - Abstract: In this paper, we report on the synthesis of antimony sulfide (Sb{sub 2}S{sub 3}) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb{sub 2}S{sub 3} nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb{sub 2}S{sub 3} nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb{sub 2}S{sub 3} thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS{sub 2}, CO and CH{sub 4} were detected from the reaction system by GC-MS analysis, which suggests that both Sb{sub 2}S{sub 3} and organic

  9. A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm

    Science.gov (United States)

    Saarinen, Esa J.; Lyytikäinen, Jari; Ranta, Sanna; Rantamäki, Antti; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G.

    2016-03-01

    We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the pumped with commercial low-cost 980 nm laser diode modules. Laser emission at 1490 nm was frequency-doubled with a bismuth borate crystal that was cut for type I critical phase matching. At the maximum output power, we achieved an optical-to-optical efficiency of 8.3% with beam quality parameter M2 below 1.5. The laser wavelength could be tuned with an intracavity birefringent plate from 720 to 764 nm.

  10. Low-temperature laser-induced selective area growth of compound semiconductor

    Science.gov (United States)

    Uppili, Sudarsan

    Laser induced epitaxial growth of gallium phosphide was investigated as a low temperature, spatially selective process using both pyrolytic and photolytic reaction. A focussed beam from an argon ion laser operating at 514.5 nm was used to direct-write epitaxial microstructures of homoepitaxial GaP using a pyrolytic process. The precursors were trimethyl gallium (TMG) and tertiary butylphosphine (TBP). Dependence of the epitaxial growth on several deposition parameters was examined. An ArF excimer laser was also used to achieve homoepitaxy and heteroepitaxy of gallium phosphide on gallium arsenide at 500 C using TMG and TBP as the precusor gases. Dependence of homoepitaxial growth of GaP on several parameters is examined. The crystalline properties of the film were determined using transmission electron microscopy (TEM). Electrical properties of p-n diodes fabricated via Zn doping were also examined. Defect structures in excimer laser-assisted epitaxial GaP on (100) GaP and (100) GaAs were examined using TEM. Periodic structures were obtained using nominally unpolarized excimer laser radiation, during heteroepitaxial growth of GaP on GaAs. Both crystalline properties and chemical composition of these structures were examined. Microanalysis showed modulation in composition in the ripple structure resulting from the thermal variation caused by the optical interference during growth. Electrical conductivity measurements of GaP during pulsed lasers irradiation indicated that in the absence of gases, there was appreciable heating of the semiconductor. However, a very small quantity of hydrogen or helium cooled the substrate appreciably. This suggested that the average temperature rise of the substrate was not an important factor in the temperature calculations used in the present investigation.

  11. Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

    Science.gov (United States)

    Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

    2011-01-01

    Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all

  12. Wavelength Tuning in Two-Section Distributed Bragg Reflector Laser by Selective Intermixing of InGaAsP-InGaAsP Quantum Well Structure%用选择混合InGaAsP-InGaAsP量子阱技术研制的两段波长可调谐分布布拉格反射激光器

    Institute of Scientific and Technical Information of China (English)

    陆羽; 张靖; 王圩; 朱洪亮; 周帆; 王保军; 张静媛; 赵玲娟

    2003-01-01

    The two-section tunable ridge waveguide distributed Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppression ratio (SMSR) is 40dB.%采用选择混合InGaAsP-InGaAsP量子阱技术,研制出单脊波导结构的两段可调谐分布布拉格反射(DBR)激光器.激光器的阈值电流为51mA,可调谐范围为4.6nm,边模抑制比(SMSR)为40dB.

  13. Speckle noise reduction of a dual-frequency laser Doppler velocimeter based on an optically injected semiconductor laser

    Science.gov (United States)

    Cheng, Chih-Hao; Lee, Jia-Wei; Lin, Tze-Wei; Lin, Fan-Yi

    2012-02-01

    We develop and investigate a dual-frequency Laser Doppler Velocimeter (DF-LDV) based on an optically injected semiconductor laser. By operating the laser in a period-one oscillation (P1) state, the laser can emit light with two coherent frequency components separated by about 11.25 GHz. Through optical heterodyning, the velocity of the target can be determined from the Doppler shift of the beat signal of the dual-frequency light. While the DF-LDV has the same advantages of good directionality and high intensity as in the conventional singlefrequency LDV (SF-LDV), having an effective wavelength in the range of microwave in the beat signal greatly reduces the speckle noise caused by the random phase modulation from the rough surface of the moving target. To demonstrate the speckle noise reduction, the Doppler shifted signals from a moving target covered by the plain paper are measured both from the SF-LDV and the DF-LDV. The target is rotated to provide a transverse velocity, where the speckle noise increases as the transverse velocity increases. The bandwidth of the Doppler signal obtained from the SF-LDV is increased from 4.7 kHz to 9.4 kHz as the transverse velocity increases from 0 m/s to 5 m/s. In contrast, the bandwidth obtained from the DF-LDV maintains at 0.09 Hz with or without the rotation limited by the linewidth of the P1 state used. By phase-locking the laser with a RF current modulation, the linewidth of the P1 state can be much reduced to further improve the velocity resolution and extend the detection range.

  14. Compact, Low-Cost, Frequency-Locked Semiconductor Laser for Injection Seeding High Power Laser Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA Small Business Innovative Research Phase II project will develop a compact, low-cost, wavelength locked seed laser for injection locking high powered...

  15. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael

    2008-12-17

    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  16. A semiconductor-based, frequency-stabilized mode-locked laser using a phase modulator and an intracavity etalon.

    Science.gov (United States)

    Davila-Rodriguez, Josue; Ozdur, Ibrahim; Williams, Charles; Delfyett, Peter J

    2010-12-15

    We report a frequency-stabilized semiconductor-based mode-locked laser that uses a phase modulator and an intracavity Fabry-Perot etalon for both active mode-locking and optical frequency stabilization. A twofold multiplication of the repetition frequency of the laser is inherently obtained in the process. The residual timing jitter of the mode-locked pulse train is 13 fs (1 Hz to 100 MHz), measured after regenerative frequency division of the photodetected pulse train.

  17. Time-Domain Large Signal Investigation on Dynamic Responses of the GDCC Quarterly Wavelength Shifted Distributed Feedback Semiconductor Laser

    Directory of Open Access Journals (Sweden)

    Hamza Bousseta

    2012-09-01

    Full Text Available A numerical investigation on the dynamic large-signal analysis using a time-domain traveling wave model of quarter wave-shifted distributed feedback semiconductor lasers diode with a Gaussian distribution of the coupling coefficient (GDCC is presented. It is found that the single-mode behavior and the more hole-burning effect corrections of quarter wave-shifted distributed feedback laser with large coupling coefficient can be improved significantly by this new proposed light source.

  18. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    Science.gov (United States)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  19. Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

    Directory of Open Access Journals (Sweden)

    V.V.Ignatyuk

    2004-01-01

    Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

  20. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SOA...

  1. Method of ions acceleration for laser-induced implantation of semiconductor materials

    Science.gov (United States)

    Czarnecka, A.; Badziak, J.; Parys, P.; Rosinski, M.; Wołowski, J.

    The application of electrostatic fields for the formation of laser-generated ions makes it possible to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless ions from the ion stream designed for laser-induced implantation and deposition of layers of semiconductor materials. For acceleration of ions a special electrostatic system has been completed and tested at the Institute of Plasma Physics and Laser Microfusion (IPPLM). A repetitive Nd: glass laser with energy of ˜0.5 J in a 3.5 ns pulse, wavelength of 1.06 μm, repetition rate of up to 10 Hz and intensity on the target of up to 1011 W cm-2, has been recently employed to produce ions emitted from irradiated solid targets. The movable target holder was located inside the cylindrical box connected with a high-voltage source (up to 50 kV). The ions passing through the diaphragm in this box were accelerated in the system of electrodes in the electrostatic field formed in the gap between the box and a grid mounted at the end of the grounded cylindrical electrode. The parameters of the ion streams were measured with the use of several ion collectors and an electrostatic ion energy analyzer (IEA). The Ge ion stream attained energy of up to 30 keV and ion fluency 1011 ions/cm2 for one laser shot. The maximum ion charge state measured with the use of IEA was 3+.

  2. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    Science.gov (United States)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  3. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing.

    Science.gov (United States)

    Gu, Quan; Hayes-Gill, Barrie R; Morgan, Stephen P

    2008-04-20

    A 4 x 4 pixel array with analog on-chip processing has been fabricated within a 0.35 mum complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate omega(0.5) filter at the pixel level, this has been approximated using the "roll off" of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  4. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  5. Liquid mixture detection by InGaAsP semiconductor lasers

    Science.gov (United States)

    Zhu, Xiang; Cassidy, Daniel T.

    1997-01-01

    Compact liquid sensors were constructed by using the output of near-infrared semiconductor diode lasers to measure transmission. Multiple short external cavities were used to force diode lasers to provide a wide spectral coverage (approximately equals 72 nm) for the detection of broad absorption features of liquids. The transmission at discrete laser modes were processed by the principal component regression (PCR) and the partial least squares (PLS) algorithms. A root mean square error of prediction of 0.092% and a correlation coefficient R2 of 0.998 were obtained for the detection of water concentration in D2O. The rms value of 0.056% from 30 independent measurements of 0.5% water in D2P showed that the method was sensitive to detect 0.1% concentration difference. The application of the PCR and the PLS algorithms in the scheme was studied in a three mixture system of water, acetone and methanol in terms of optimizing factors and detection of 'outliers'. The limiting noise sources were determined by modeling synthetic data.

  6. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule...... solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured...

  7. Optical arbitrary waveform generation based on multi-wavelength semiconductor fiber ring laser

    Science.gov (United States)

    Li, Peili; Ma, Xiaolu; Shi, Weihua; Xu, Enming

    2017-09-01

    A new scheme of generating optical arbitrary waveforms based on multi-wavelength semiconductor fiber ring laser (SFRL) is proposed. In this novel scheme, a wide and flat optical frequency comb (OFC) is provided directly by multi-wavelength SFRL, whose central frequency and comb spacing are tunable. OFC generation, de-multiplexing, amplitude and phase modulation, and multiplexing are implementing in an intensity and phase tunable comb filter, as induces the merits of high spectral coherence, satisfactory waveform control and low system loss. By using the mode couple theory and the transfer matrix method, the theoretical model of the scheme is established. The impacts of amplitude control, phase control, number of spectral line, and injection current of semiconductor optical amplifier (SOA) on the waveform similarity are studied using the theoretical model. The results show that, amplitude control and phase control error should be smaller than 1% and 0.64% respectively to achieve high similarity. The similarity of the waveform is improved with the increase of the number of spectral line. When the injection current of SOA is in a certain range, the optical arbitrary waveform reaches a high similarity.

  8. FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

  9. Synchronization of spatiotemporal semiconductor lasers and its application in color image encryption

    CERN Document Server

    Banerjee, S; Mukhopadhyay, S; Misra, A P; 10.1016/j.optcom.2010.12.077

    2011-01-01

    Optical chaos is a topic of current research characterized by high-dimensional nonlinearity which is attributed to the delay-induced dynamics, high bandwidth and easy modular implementation of optical feedback. In light of these facts, which adds enough confusion and diffusion properties for secure communications, we explore the synchronization phenomena in spatiotemporal semiconductor laser systems. The novel system is used in a two-phase colored image encryption process. The high-dimensional chaotic attractor generated by the system produces a completely randomized chaotic time series, which is ideal in the secure encoding of messages. The scheme thus illustrated is a two-phase encryption method, which provides sufficiently high confusion and diffusion properties of chaotic cryptosystem employed with unique data sets of processed chaotic sequences. In this novel method of cryptography, the chaotic phase masks are represented as images using the chaotic sequences as the elements of the image. The scheme dras...

  10. Small-Signal Analysis of Performance Characterization of Chaotic Masking Decoding in Injected Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    YAN Sen-Lin

    2005-01-01

    @@ Performance characterization of chaotic masking encoding and decoding is studied in synchronization injected semiconductor lasers under condition of injected-feedback. The modulation response function of chaotic masking encoding and its response factor are theoretically deduced and analysed by small-signal analysis. It is numerically demonstrated that there are peak values between 1.52 GHz and 3.18 GHz when the injection coefficient is between0.2 and 0.8. The chaotic synchronization error equation is theoretically deduced and its root is given by smallsignal analysis under condition of chaotic masking encoding. The chaotic decoding formula is also theoretically demonstrated. There are the least dale values of synchronization errors between the modulation frequencies of 0.79GHz and 1.91 GHz when the injection coefficient is between 0.1 and 0.8 in numerical simulation. The numerical result is well consistent with the theoretical demonstration.

  11. Coherent Optical Generation of a 6 GHz Microwave Signal with Directly Phase Locked Semiconductor DFB Lasers

    DEFF Research Database (Denmark)

    Gliese, Ulrik Bo; Nielsen, Torben Nørskov; Bruun, Marlene;

    1992-01-01

    Experimental results of a wideband heterodyne second order optical phase locked loop with 1.5 ¿m semiconductor lasers are presented. The loop has a bandwidth of 180 MHz, a gain of 181 dBHz and a propagation delay of only 400 ps. A beat signal of 8 MHz linewidth is phase locked to become a replica...... of a microwave reference source close to carrier with a noise level of ¿125 dBc/Hz. The total phase variance of the locked carrier is 0.04 rad2 and carriers can be generated in a continuous range from 3 to 18 GHz. The loop reliability is excellent with an average time to cycle slip of 1011 seconds...

  12. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

    1998-01-01

    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  13. Electrical Addressing and Temporal Tweezing of Localized Pulses in Passively Mode-Locked Semiconductor Lasers

    CERN Document Server

    Camelin, P; Marconi, M; Giudici, M

    2016-01-01

    We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures (LSs), also called localized pulses, found in passively mode-locked Vertical-Cavity Surface-Emitting Lasers. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. ...

  14. Femtosecond laser ablation of a metal, a dielectric and a semiconductor illuminated at oblique angles of incidence

    CERN Document Server

    Liu, Xiao-Long; Petrarca, Massimo; Polynkin, Pavel

    2016-01-01

    We report the measurements of fluence thresholds for single-shot femtosecond laser ablation, as functions of the angle of incidence and at different polarizations of the laser beam, for a metal, a dielectric and a semiconductor. We use the linear index of refraction, unperturbed by the ablating laser pulse, to compute the values of the laser fluence transmitted into the material, corresponding to the measured values of the ablation threshold fluence in the incident beam. Our data show that, in spite of the complex nonlinear ionization dynamics involved in the ablation process, thus computed transmitted threshold fluence is remarkably independent of the angle of incidence and polarization of the laser beam, for all three material types. We suggest that the angular dependence of ablation threshold can be utilized for profiling fluence distributions in ultra-intense femtosecond laser beams.

  15. Direct laser writing of topographic features in semiconductor-doped glass

    Science.gov (United States)

    Smuk, Andrei Y.

    2000-11-01

    Patterning of glass and silica surfaces is important for a number of modern technologies, which depend on these materials for manufacturing of both final products, such as optics, and prototypes for casting and molding. Among the fields that require glass processing on microscopic scale are optics (lenses and arrays, diffractive/holographic elements, waveguides), biotechnology (capillary electrophoresis chips and biochemical libraries) and magnetic media (landing zones for magnetic heads). Currently, standard non-laser techniques for glass surface patterning require complex multi-step processes, such as photolithography. Work carried out at Brown has shown that semiconductor- doped glasses (SDG) allow a single-step patterning process using low power continuous-wave visible lasers. SDG are composite materials, which consist of semiconductor crystallites embedded into glass matrix. In this study, borosilicate glasses doped with CdSxSe1-x nanocrystals were used. Exposure of these materials to a low-power above- the-energy gap laser beam leads to local softening, and subsequent expansion and rapid solidification of the exposed volume, resulting in a nearly spherical topographic feature on the surface. The effects of the incident power, beam configuration, and the exposure time on the formation and final parameters of the microlens were studied. Based on the numerical simulation of the temperature distribution produced by the absorbed Gaussian beam, and the ideas of viscous flow at the temperatures around the glass transition point, a model of lens formation is suggested. The light intensity distribution in the near-field of the growing lens is shown to have a significant effect on the final lens height. Fabrication of dense arrays of microlenses is shown, and the thermal and structural interactions between the neighboring lenses were also studied. Two-dimensional continuous-profile topographic features are achieved by exposure of the moving substrates to the writing

  16. Utilizing the transparency of semiconductors via "backside" machining with a nanosecond 2 μm Tm:fiber laser

    Science.gov (United States)

    Gehlich, Nils; Bonhoff, Tobias; Sisken, Laura; Ramme, Mark; Gaida, Christian; Gebhardt, Martin; Mingareev, Ilya; Shah, Lawrence; Richardson, Martin C.

    2014-03-01

    Semiconductors such as Si and GaAs are transparent to infrared laser radiation with wavelengths >1.2 μm. Focusing laser light at the back surface of a semiconductor wafer enables a novel processing regime that utilizes this transparency. However, in previous experiments with ultrashort laser pulses we have found that nonlinear absorption makes it impossible to achieve sufficient optical intensity to induce material modification far below the front surface. Using a recently developed Tm:fiber laser system producing pulses as short as 7 ns with peak powers exceeding 100 kW, we have demonstrated it is possible to ablate the "backside" surface of 500-600 μm thick Si and GaAs wafers. We studied laser-induced morphology changes at front and back surfaces of wafers and obtained modification thresholds for multipulse irradiation and surface processing in trenches. A significantly higher back surface modification threshold in Si compared to front surface is possibly attributed to nonlinear absorption and light propagation effects. This unique processing regime has the potential to enable novel applications such as semiconductor welding for microelectronics, photovoltaic, and consumer electronics.

  17. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    Science.gov (United States)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  18. Sideband locking of a single-section semiconductor distributed-feedback laser in an optical phase-lock loop.

    Science.gov (United States)

    Satyan, Naresh; Vasilyev, Arseny; Liang, Wei; Rakuljic, George; Yariv, Amnon

    2009-11-01

    The bandwidth and performance of optical phase-lock loops (OPLLs) using single-section semiconductor lasers (SCLs) are severely limited by the nonuniform frequency modulation response of the lasers. It is demonstrated that this restriction is eliminated by the sideband locking of a single-section distributed-feedback SCL to a master laser in a heterodyne OPLL, thus enabling a delay-limited loop bandwidth. The lineshape of the phase-locked SCL output is characterized using a delayed self-heterodyne measurement.

  19. Continuous-wave 1.55 $\\mu$m diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy

    CERN Document Server

    Jacquemet, M; Guelachvili, G; Picqué, N; Sagnes, I; Strassner, M; Symonds, C; Garnache, Arnaud; Guelachvili, Guy; Jacquemet, Mathieu; Picqu\\'{e}, Nathalie; Sagnes, Isabelle; Strassner, Martin; Symonds, Cl\\'{e}mentine

    2007-01-01

    A room temperature operating Vertical External Cavity Surface Emitting Laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by time-resolved Fourier transform interferometry. At an equivalent pathlength of 15 km, the high resolution spectrum of the semiconductor disk laser emission covers 17 nm simultaneously. A noise equivalent absorption coefficient at one second averaging equal to 1.5 10^{-10} cm^{-1}.Hz^{-1/2} per spectral element is reported for the 65 km longest path length employed.

  20. Impact of optical gain broadening on characteristics of response function in the presence and absence of tunnelling injection for quantum dot semiconductor lasers

    Indian Academy of Sciences (India)

    YASIN YEKTA KIA; ESFANDIAR RAJAEI

    2017-09-01

    In this paper, the dynamics of QD semiconductor lasers is investigated numerically. Large and small signal modulations for various inhomogeneous broadenings have been studied. Computationally, we have solved the rate equation for two-state InAs QD semiconductor lasers and the effect of inhomogeneous broadening on response function and output power due to variation of QD parameters have been investigated in the presence and absence of tunnelling. Also, we have studied these effects on optical gain and output power. We have shown that tunnelling injection enhances the efficiency of the semiconductor laser.

  1. Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

    Science.gov (United States)

    Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

    2013-04-08

    In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

  2. Pulsed-laser-induced damage in semiconductors Ge, ZnS, and ZnSe at 10.6um

    Science.gov (United States)

    Lefranc, Sebastian; Kudriavtsev, Eugene M.; Autric, Michel L.

    1998-04-01

    Laser irradiation induced damage to several materials of interest for use as 10.6 micrometers laser system windows is investigated in this paper. The irradiation source in these single shot experiments was a pulsed TEA CO2 laser. Damage initiation in semiconductors has been studied during the interaction by measuring the variation of the transmitted intensity of a He- Ne and a CO2 cw lasers through the samples. Results show that damages appear at the beginning of the laser-matter interaction process on both surfaces and in the bulk of the materials. The damaged materials have been characterized for various incident fluences by means of optical microscopy and scanning electron microscopy in terms of topography and morphology. The modified surface chemical analysis and the structural analysis have been carried out using energy dispersive x-ray and Raman spectroscopy.

  3. A high-performance quantum dot superluminescent diode with a two-section structure.

    Science.gov (United States)

    Li, Xinkun; Jin, Peng; An, Qi; Wang, Zuocai; Lv, Xueqin; Wei, Heng; Wu, Jian; Wu, Ju; Wang, Zhanguo

    2011-12-12

    Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.

  4. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.;

    2009-01-01

    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance......Hz) the SSOA configuration can maintain a significantly higher bandwidth (~50% higher) compared to the MOPA architecture. Correspondingly narrower point spread functions can be generated in a Michelson interferometer.......We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

  5. Final report on LDRD project: Semiconductor surface-emitting microcavity laser spectroscopy for analysis of biological cells and microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; McDonald, A.E. [Sandia National Labs., Albuquerque, NM (United States). Nanostructure and Semiconductor Physics Dept.; Gourley, M.F. [Washington Hospital Center, DC (United States); Bellum, J. [Coherent Technologies, Boulder, CO (United States)

    1997-08-01

    This article discusses a new intracavity laser technique that uses living or fixed cells as an integral part of the laser. The cells are placed on a GaAs based semiconductor wafer comprising one half of a vertical cavity surface-emitting laser. After placement, the cells are covered with a dielectric mirror to close the laser cavity. When photo-pumped with an external laser, this hybrid laser emits coherent light images and spectra that depend sensitively on the cell size, shape, and dielectric properties. The light spectra can be used to identify different cell types and distinguish normal and abnormal cells. The laser can be used to study single cells in real time as a cell-biology lab-on-a-chip, or to study large populations of cells by scanning the pump laser at high speed. The laser is well-suited to be integrated with other micro-optical or micro-fluidic components to lead to micro-optical-mechanical systems for analysis of fluids, particulates, and biological cells.

  6. Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure

    Science.gov (United States)

    Oh, Su Hwan; Lee, Ji-Myon; Kim, Soo; Ko, Hyunsung; Lee, Chul-Wook; Park, Sahnggi; Park, Moon-Ho

    2004-10-01

    We have demonstrated a high-power widely tunable sampled grating (SG) DBR laser integrated monolithically with optical semiconductor amplifier (SOA), using planar buried heterostructure (PBH). The measured threshold current was 5 mA on average with 60 chips randomly selected which is lowest among the typical average values. Fiber-coupled output power was 12.4 dBm and the output power variation was ˜1 dB for the whole tuning range.

  7. Field test of an all-semiconductor laser-based coherent continuous-wave Doppler lidar for wind energy applications

    DEFF Research Database (Denmark)

    Sjöholm, Mikael; Dellwik, Ebba; Hu, Qi

    The wind energy industry is gaining interest in prevision of the rotor inflow for turbine control. The potential benefits are increased power production due to better alignment of the rotor to the mean wind direction as well as prolonged lifetime of the turbine due to load reductions. Several lidar......-produced all-semiconductor laser. The instrument is a coherent continuous-wave lidar with two fixed-focus telescopes for launching laser beams in two different directions. The alternation between the telescopes is achieved by a novel switching technique without any moving parts. Here, we report results from...

  8. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri

    2013-10-01

    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

  9. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  10. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    Science.gov (United States)

    Barseghyan, M. G.

    2016-11-01

    The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  11. [Efficacy of semiconductor laser therapy combined with botulinum toxin A type injection in treatment of temporomandibular disorders].

    Science.gov (United States)

    Jiang, Mei-Yuan; You, Qing-Ling

    2016-12-01

    To observe the efficacy of semiconductor laser therapy in combination with botulinum toxin A type injection in treating temporomandibular disorders and the influence on serum levels of interleukin(IL)-1 and tumor necrosis factor(TNF)-α. Ninety patients with temporomandibular disorders were selected and randomly divided into control group and treatment group with 45 cases in each group. Patients in the control group received semiconductor laser therapy,once per day and 1 course for 1 week. Patients in the treatment group was given semiconductor laser therapy in combination with botulinum toxin A type. 50 U botulinum toxin A type were injected into the masseteric and temporal muscles with 5 injections at different sites in each side. The treatment course of patients was 2 weeks. Fricton scale indexes, pain index, and efficacy were compared between the two groups. Serum levels of IL-1 and TNF-α were detected in both groups. SPSS19.0 software package was used for data analysis. After treatment, PI, DI and CMI in the treatment group were significantly lower than the control group (Ptreatment, VAS score of the treatment group was significantly lower than the control group (Ptreatment group was 93.33%,which was significantly higher than control group (66.67%, Ptreatment group were significantly lower than the control group (Plaser therapy in combination with botulinum toxin A type injection in treating temporomandibular disorders is significant,and may be related to decreased serum levels of IL-1 and TNF-α.

  12. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

    Energy Technology Data Exchange (ETDEWEB)

    Sokolova, Z N; Tarasov, I S [Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation); Asryan, L V [Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University,207 Holden Hall - M/C 0237, Blacksburg, VA 24061 (United States)

    2014-09-30

    Using an extended theoretical model, which includes the rate equations for both electrons and holes, we have studied the output characteristics of semiconductor quantum-well lasers. We have found non-trivial dependences of electron and hole concentrations in the waveguide region of the laser on the capture velocities of both types of carriers from the waveguide region into the quantum well. We have obtained the dependences of the internal differential quantum efficiency and optical output power of the laser on the capture velocities of electrons and holes. An increase in the capture velocities has been shown to result in suppression of parasitic recombination in the waveguide region and therefore in a substantial increase in the quantum efficiency and output power. (lasers)

  13. Effect of facet phases and reflectivity on the internal optical field in QWS-DFB semiconductor lasers

    CERN Document Server

    Shahshahani, F; Mirabbaszadeh, K

    2002-01-01

    In this paper, the effects of reflected waves of the facets on the internal optical intensity of semiconductor DFB lasers are investigated. The uniformity of optical intensity along the cavity length is evaluated with flatness parameter. The dependence of this parameter on coupling coefficient, reflectivity and grating phase at the facets is also studied. This investigation shows that in some structures reflected waves of the facets cause optical intensity along the cavity length to have more uniformed distribution than a DFB laser with anti-reflective facets. It is also shown that flatness parameter is very sensitive to grating phase. thus it is necessary for designing a DFB laser to consider the effects of reflected wave and grating phase at both ends of cavity in order to increase the stability of the laser against SHB (Spatial Hole Burning) effect. The effects of reflectivity and grating phase on longitudinal distribution of photon and carrier density above threshold are investigated, too.

  14. Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Eshghi, M. J.; Majdabadi, A.; Koohian, A.

    2017-01-01

    In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

  15. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    Science.gov (United States)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  16. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  17. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  18. Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI Mass Spectrometric Approaches to Proteome Analysis

    Directory of Open Access Journals (Sweden)

    Suresh Kumar Kailasa

    2013-12-01

    Full Text Available Semiconductor quantum dots (QDs or nanoparticles (NPs exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis.

  19. Electrical addressing and temporal tweezing of localized pulses in passively-mode-locked semiconductor lasers

    Science.gov (United States)

    Camelin, P.; Javaloyes, J.; Marconi, M.; Giudici, M.

    2016-12-01

    We show that the pumping current is a convenient parameter for manipulating the temporal localized structures (LSs), also called localized pulses, found in passively-mode-locked vertical-cavity surface-emitting lasers. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing one to control the position and the dynamics of LSs. We show that the localized pulse drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on a finite time scale and breaks the parity invariance along the cavity, thus leading to a different paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  20. Indirect detection by semiconductor laser-induced fluorometry in micellar electrokinetic chromatography

    Science.gov (United States)

    Kaneta, Takashi; Imasaka, Totaro

    1995-05-01

    Indirect fluorescence detection of electrically neutral compounds separated by micellar electrokinetic chromatography is performed using a semiconductor laser as an exciting light source. Oxazine 750 is used as a visualizing agent of which absorption maximum is near 680 nm. A surfactant, tetradecyltrimethylammonium chloride, is used to form micelles and to prevent adsorption of oxazine 750 with a positive charge on the capillary wall negatively charged. This surfactant coats on the capillary wall so that oxazine 750 is repulsed electrically on the capillary wall. In this technique, some aromatic compounds with relatively polar functional groups, such as aniline and nitrobenzene, could be separated and detected, while nonpolar compounds such as benzene and toluene can not be detected. The range of the detection limit is from 4.2 X 10-4 to 1.6 X 10-3 M (S/N equals 3) for the aromatic compounds. The detection mechanism is based on enhancement of the fluorescence intensity in the micellar solution and on exclusion of the fluorophore attached at the hydrophilic moiety of the micelle by a hydrophilic sample.

  1. Synchronization of spatiotemporal semiconductor lasers and its application in color image encryption

    Science.gov (United States)

    Banerjee, S.; Rondoni, L.; Mukhopadhyay, S.; Misra, A. P.

    2011-05-01

    Optical chaos is a topic of current research characterized by high-dimensional nonlinearity which is attributed to the delay-induced dynamics, high bandwidth and easy modular implementation of optical feedback. In light of these facts, which add enough confusion and diffusion properties for secure communications, we explore the synchronization phenomena in spatiotemporal semiconductor laser systems. The novel system is used in a two-phase colored image encryption process. The high-dimensional chaotic attractor generated by the system produces a completely randomized chaotic time series, which is ideal in the secure encoding of messages. The scheme thus illustrated is a two-phase encryption method, which provides sufficiently high confusion and diffusion properties of chaotic cryptosystem employed with unique data sets of processed chaotic sequences. In this novel method of cryptography, the chaotic phase masks are represented as images using the chaotic sequences as the elements of the image. The scheme drastically permutes the positions of the picture elements. The next additional layer of security further alters the statistical information of the original image to a great extent along the three-color planes. The intermediate results during encryption demonstrate the infeasibility for an unauthorized user to decipher the cipher image. Exhaustive statistical tests conducted validate that the scheme is robust against noise and resistant to common attacks due to the double shield of encryption and the infinite dimensionality of the relevant system of partial differential equations.

  2. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers.

    Science.gov (United States)

    Ghosh, S; Wang, W H; Mendoza, F M; Myers, R C; Li, X; Samarth, N; Gossard, A C; Awschalom, D D

    2006-04-01

    Semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities, a new and promising research field, have revealed effects such as polarization beats, stimulated spin scattering and giant Faraday rotation. Here, we study the electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the discs, and observe an enhancement of the spin-coherence time when the optical excitation is in resonance with a high-quality (Q approximately 5,000) lasing mode. This resonant enhancement, contrary to expectations from the observed trend in the carrier-recombination time, is then manipulated by altering the cavity design and dimensions. In analogy with devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide new pathways towards spin-dependent quantum optoelectronics.

  3. Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking

    Science.gov (United States)

    Hader, J.; Scheller, M.; Laurain, A.; Kilen, I.; Baker, C.; Moloney, J. V.; Koch, S. W.

    2017-01-01

    Experimental and theoretical results on the mode-locking dynamics in vertical-external-cavity surface-emitting lasers with semiconductor and graphene saturable absorber mirrors are reviewed with an emphasis on the role of nonequilibrium carrier effects. The systems are studied theoretically using a fully microscopic many-body model for the carrier distributions and polarizations, coupled to Maxwell’s equations for the field propagation. Pump-probe measurements are performed with (sub-) 100 fs resolution. The analysis shows that the non-equilibrium carrier dynamics in the gain quantum-wells and saturable absorber medium significantly influences the system’s response and the resulting mode-locked pulses. The microscopic model is used to study the pulse build up from spontaneous emission noise and to determine the dependence of achievable pulse lengths and fluences on the amounts of saturable and non-saturable losses and the optical gain. The change of the group delay dispersion (GDD) on the pump level is examined and the dependence of the pulse lengths on the total amount of GDD is demonstrated experimentally. Theory-experiment comparisons are used to demonstrate the highly quantitative accuracy of the fully microscopic modeling.

  4. Gigahertz Self-referenceable Frequency Comb from a Semiconductor Disk Laser

    CERN Document Server

    Zaugg, Christian A; Mangold, Mario; Mayer, Aline S; Link, Sandro M; Emaury, Florian; Golling, Matthias; Gini, Emilio; Saraceno, Clara J; Tilma, Bauke W; Keller, Ursula

    2014-01-01

    We present a 1.75-GHz self-referenceable frequency comb from a vertical external-cavity surface-emitting laser (VECSEL) passively modelocked with a semiconductor saturable absorber mirror (SESAM). The VECSEL delivers 231-fs pulses with an average power of 100 mW and is optimized for stable and reliable operation. The optical spectrum was centered around 1038 nm and nearly transform-limited with a full width half maximum (FWHM) bandwidth of 5.5 nm. The pulses were first amplified to an average power of 5.5 W using a backward-pumped Yb-doped double-clad large mode area (LMA) fiber and then compressed to 85 fs with 2.2 W of average power with a passive LMA fiber and transmission gratings. Subsequently, we launched the pulses into a highly nonlinear photonic crystal fiber (PCF) and generated a coherent octave-spanning supercontinuum (SC). We then detected the carrier-envelope offset (CEO) frequency (fCEO) beat note using a standard f-to-2f-interferometer. The fCEO exhibits a signal-to-noise ratio of 17 dB in a 10...

  5. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  6. Laser Induced Chemical Vapor Phase Epitaxial Growth of III-V semiconductor Films

    Science.gov (United States)

    1991-05-14

    temperatures for the preparation and crystal growth of semiconductors . During the first phase of this program at Southern Methodist University, the epitaxial...approach to the preparation of device-quality 4 semiconductor films of controlled electrical and stru -.tural propierties . The excitation of reaction...temperatures for the preparation and crystal growth of semiconductors . The vapors of essentially all metalorganic compounds and group V hydrides are colorless

  7. 750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range.

    Science.gov (United States)

    Saarinen, Esa J; Lyytikäinen, Jari; Ranta, Sanna; Rantamäki, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G

    2015-10-01

    We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2 of the laser output was measured to be below 1.5 at all pump powers. The laser is a promising tool for biomedical applications that can take advantage of the large penetration depth of light in tissue in the 700-800 nm spectral range.

  8. Multi-wavelength fiber ring laser based on a chirped moiré fiber grating and a semiconductor optical amplifier

    Institute of Scientific and Technical Information of China (English)

    Shaohua Lu; Ou Xu; Suchun Feng; Shuisheng Jian

    2009-01-01

    A simple and cost-effective multi-wavelength fiber ring laser based on a chirped Moire fiber grating (CMFG)arid a semiconductor optical amplifier (SOA) is proposed.Stable triple-wavelength lasing oscillations at room temperature are experimentally demonstrated.The measured optical signal-to-noise ratio (SNR) reaches the highest value of 50 dB and the power fluctuation of each wavelength is less than 0.2 dB within a 1-h period.To serve as a wavelength selective element,the CMFG possesses excellent comb-like filtering chaxacteristics including stable wavelength interval arid ultra-narrow passband,and its fabrication method is easy and flexible.The lasing oscillation shows a narrower bandwidth than SOA-based multi-wavelength fibcr lasers utilizing some other kinds of wavelength selective components.Methods to optimize the laser performance are also discussed.

  9. Coherent harmonic production using a two-section undulator FEL

    Energy Technology Data Exchange (ETDEWEB)

    Jaroszynski, D.A. [Commissariat a l`Energie, Bruyeres-le-Chatel (France); Prazeres, R.; Glotin, F. [Centre Universitaire Paris-Sud (France)] [and others

    1995-12-31

    We present measurements and a theoretical analysis of a new method of generating harmonic radiation in a free-electron laser oscillator with a two section undulator in a single optical cavity. To produce coherent harmonic radiation the undulator is arranged so that the downstream undulator section resonance frequency matches a harmonic of the upstream undulator. Both the fundamental and the harmonic optical fields evolve in the same optical cavity and are coupled out with different extraction fractions using a hole in one of the cavity mirrors. We present measurements that show that the optical power at the second and third harmonic can be enhanced by more than an order of magnitude in this fundamental/harmonic configuration. We compare the production of harmonic radiation of a two sectioned fundamental/harmonic undulator with that produced from a FEL operating at its highest efficiency with a step-tapered undulator, where the bunching at the end of the first section is very large. We examine, the dependence of the harmonic power on the intracavity power by adjusting the optical cavity desynchronism, {delta}L. We also examine the evolution of the fundamental and harmonic powers as a function of cavity roundtrip number to evaluate the importance of the small signal gain at the harmonic. We compare our measurements with predictions of a multi-electron numerical model that follows the evolution of fundamental and harmonic power to saturation. This fundamental/harmonic mode, of operation of the FEL may have useful applications in the production of coherent X-ray and VUV radiation, a spectral range where high reflectivity optical cavity mirrors are difficult or impossible to manufacture.

  10. Periodic adjustment of the position of a laser beam spot on a semiconductor saturable absorber mirror in a passively mode-locked solid-state laser

    Institute of Scientific and Technical Information of China (English)

    Xia Pa-Keti; Yan Ping; Gong Ma-Li

    2011-01-01

    A laser diode end-pumped passively mode-locked Nd:YV04 solid-state laser with a semiconductor saturable absorber mirror (SESAM),in which the intracavity laser beam spot on the SESAM can be adjusted periodically,is investigated. Inserting a rectangular prism (RP) into the laser cavity is a promising approach towards the goal of periodically moving the position of the focus spot of the intracavity pulse on the SESAM surface to avoid the long-time irradiation of the laser beam on the same position,thereby solving a series of problems caused by damage to the SESAM and greatly prolonging its usage life. The adjustment of the rectangular prism in the laser cavity does not break the stable continuous wave (CW) mode-locked condition. The laser generates a stable picosecond pulse sequence at 1064 nm with an output power of 3.6 W and a pulse width of 14 ps. The instabilities of the output power and the pulse width are 1.77% and 4.5%,respectively.

  11. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  12. An all-optical locking of a semiconductor laser to the atomic resonance line with 1 MHz accuracy.

    Science.gov (United States)

    Zhang, Xiaogang; Tao, Zhiming; Zhu, Chuanwen; Hong, Yelong; Zhuang, Wei; Chen, Jingbiao

    2013-11-18

    An all-optical locking technique without extra electrical feedback control system for a semiconductor laser has been used in stabilizing the laser frequency to a hyperfine crossover transition of 87Rb 5(2)S(1/2), F = 2 → 5(2)P(3/2), F' = 2, 3 with 1 MHz level accuracy. The optical feedback signal is generated from the narrow-band Faraday anomalous dispersion optical filter (FADOF) with nonlinear saturation effect. The peak transmission of the narrow-band FADOF corresponding to 5(2)S(1/2), F = 2 → 5(2)P(3/2), F' = 2, 3 crossover transition is 18.6 %. The bandwidth is as wide as 38.9 MHz as the laser frequency changes. After locking, the laser frequency fluctuation is reduced to 1.7 MHz. The all-optical laser locking technique can be improved to much higher accuracy with increased external cavity length. The laser we have realized can provide light exactly resonant with atomic transitions used for other atom-light interaction experiments.

  13. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Gorlachuk, P V; Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Simakov, V A; Chernov, R V [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2014-02-28

    We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)

  14. A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd:YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-Qiang; YAO Jian-Quan; WANG Peng; WANG Yong-Gang; ZHANG Zhi-Gang

    2007-01-01

    We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5MHz, pulse duration of Sips, power of 2×200 mW.

  15. Photo-catalytic activities of plant hormones on semiconductor nanoparticles by laser-activated electron tunneling and emitting.

    Science.gov (United States)

    Tang, Xuemei; Huang, Lulu; Zhang, Wenyang; Jiang, Ruowei; Zhong, Hongying

    2015-01-01

    Understanding of the dynamic process of laser-induced ultrafast electron tunneling is still very limited. It has been thought that the photo-catalytic reaction of adsorbents on the surface is either dependent on the number of resultant electron-hole pairs where excess energy is lost to the lattice through coupling with phonon modes, or dependent on irradiation photon wavelength. We used UV (355 nm) laser pulses to excite electrons from the valence band to the conduction band of titanium dioxide (TiO₂), zinc oxide (ZnO) and bismuth cobalt zinc oxide (Bi₂O₃)₀.₀₇(CoO)₀.₀₃(ZnO)₀.₉ semiconductor nanoparticles with different photo catalytic properties. Photoelectrons are extracted, accelerated in a static electric field and eventually captured by charge deficient atoms of adsorbed organic molecules. A time-of-flight mass spectrometer was used to detect negative molecules and fragment ions generated by un-paired electron directed bond cleavages. We show that the probability of electron tunneling is determined by the strength of the static electric field and intrinsic electron mobility of semiconductors. Photo-catalytic dissociation or polymerization reactions of adsorbents are highly dependent on the kinetic energy of tunneling electrons as well as the strength of laser influx. By using this approach, photo-activities of phytohormones have been investigated.

  16. Photo-catalytic Activities of Plant Hormones on Semiconductor Nanoparticles by Laser-Activated Electron Tunneling and Emitting

    Science.gov (United States)

    Tang, Xuemei; Huang, Lulu; Zhang, Wenyang; Jiang, Ruowei; Zhong, Hongying

    2015-03-01

    Understanding of the dynamic process of laser-induced ultrafast electron tunneling is still very limited. It has been thought that the photo-catalytic reaction of adsorbents on the surface is either dependent on the number of resultant electron-hole pairs where excess energy is lost to the lattice through coupling with phonon modes, or dependent on irradiation photon wavelength. We used UV (355 nm) laser pulses to excite electrons from the valence band to the conduction band of titanium dioxide (TiO2), zinc oxide (ZnO) and bismuth cobalt zinc oxide (Bi2O3)0.07(CoO)0.03(ZnO)0.9 semiconductor nanoparticles with different photo catalytic properties. Photoelectrons are extracted, accelerated in a static electric field and eventually captured by charge deficient atoms of adsorbed organic molecules. A time-of-flight mass spectrometer was used to detect negative molecules and fragment ions generated by un-paired electron directed bond cleavages. We show that the probability of electron tunneling is determined by the strength of the static electric field and intrinsic electron mobility of semiconductors. Photo-catalytic dissociation or polymerization reactions of adsorbents are highly dependent on the kinetic energy of tunneling electrons as well as the strength of laser influx. By using this approach, photo-activities of phytohormones have been investigated.

  17. Portable semiconductor disk laser for in vivo tissue monitoring: a platform for the development of clinical applications

    Science.gov (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

    2011-07-01

    Long term in vivo observations at large penetration depths and minimum sample disturbance are some of the key factors that have enabled the study of different cellular and tissue mechanisms. The continuous optimization of these aspects is the main driving force for the development of advanced microscopy techniques such as those based on nonlinear effects. Its wide implementation for general biomedical applications is however, limited as the currently used nonlinear microscopes are based on bulky, maintenance-intensive and expensive excitation sources such as Ti:sapphire ultrafast lasers. We present the suitability of a portable (140x240x70 mm) ultrafast semiconductor disk laser (SDL) source, to be used in nonlinear microscopy. The SDL is modelocked by a quantum-dot semiconductor saturable absorber mirror (SESAM). This enables the source to deliver an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. The laser center wavelength (965 nm) virtually matches the two-photon absorption cross-section of the widely used Green Fluorescent Protein (GFP). This property greatly relaxes the required peak powers, thus maximizing sample viability. This is demonstrated by presenting two-photon excited fluorescence images of GFP labeled neurons and second-harmonic generation images of pharyngeal muscles in living C. elegans nematodes. Our results also demonstrate that this compact laser is well suited for efficiently exciting different biological dyes. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its widespread adoption in biomedical applications.

  18. Design concept and performance considerations for fast high power semiconductor switching for high repetition rate and high power excimer laser

    Science.gov (United States)

    Goto, Tatsumi; Kakizaki, Kouji; Takagi, Shigeyuki; Satoh, Saburoh; Shinohe, Takashi; Ohashi, Hiromichi; Endo, Fumihiko; Okamura, Katsuya; Ishii, Akira; Teranishi, Tsuneharu; Yasuoka, Koichi

    1997-07-01

    A semiconductor switching power supply has been developed, in which a novel structure semiconductor device, metal-oxide-semiconductor assisted gate-triggered thyristor (MAGT) was incorporated with a single stage magnetic pulse compression circuit (MPC). The MAGT was specially designed to directly replace thyratrons in a power supply for a high repetition rate laser. Compared with conventional high power semiconductor switching devices, it was designed to enable a fast switching, retaining a high blocking voltage and to extremely reduce the transient turn-on power losses, enduring a higher peak current. A maximum peak current density of 32 kA/cm2 and a current density risetime rate di/dt of 142 kA/(cm2×μs) were obtained at the chip area with an applied anode voltage of 1.5 kV. A MAGT switching unit connecting 32 MAGTs in series was capable of switching on more than 25 kV-300 A at a repetition rate of 5 kHz, which, coupled with the MPC, was equivalent to the capability of a high power thyratron. A high repetition rate and high power XeCl excimer laser was excited by the power supply. The results confirmed the stable laser operation of a repetition rate of up to 5 kHz, the world record to our knowledge. An average output power of 0.56 kW was obtained at 5 kHz where the shortage of the total discharge current was subjoined by a conventional power supply with seven parallel switching thyratrons, simultaneously working, for the MAGT power supply could not switch a greater current than that switched by one thyratron. It was confirmed by those excitations that the MAGT unit with the MPC could replace a high power commercial thyratron directly for excimer lasers. The switching stability was significantly superior to that of the thyratron in a high repetition rate region, judging from the discharge current wave forms. It should be possible for the MAGT unit, in the future, to directly switch the discharge current within a rise time of 0.1 μs with a magnetic assist.

  19. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector.

    Science.gov (United States)

    Smith, Richard J; Light, Roger A; Sharples, Steve D; Johnston, Nicholas S; Pitter, Mark C; Somekh, Mike G

    2010-02-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  20. Two-photon bioimaging utilizing supercontinuum light generated by a high-peak-power picosecond semiconductor laser source.

    Science.gov (United States)

    Yokoyama, Hiroyuki; Tsubokawa, Hiroshi; Guo, Hengchang; Shikata, Jun-ichi; Sato, Ki-ichi; Takashima, Keijiro; Kashiwagi, Kaori; Saito, Naoaki; Taniguchi, Hirokazu; Ito, Hiromasa

    2007-01-01

    We developed a novel scheme for two-photon fluorescence bioimaging. We generated supercontinuum (SC) light at wavelengths of 600 to 1200 nm with 774-nm light pulses from a compact turn-key semiconductor laser picosecond light pulse source that we developed. The supercontinuum light was sliced at around 1030- and 920-nm wavelengths and was amplified to kW-peak-power level using laboratory-made low-nonlinear-effects optical fiber amplifiers. We successfully demonstrated two-photon fluorescence bioimaging of mouse brain neurons containing green fluorescent protein (GFP).

  1. Accumulation boundaries: codimension-two accumulation of accumulations in phase diagrams of semiconductor lasers, electric circuits, atmospheric and chemical oscillators.

    Science.gov (United States)

    Bonatto, Cristian; Gallas, Jason Alfredo Carlson

    2008-02-28

    We report high-resolution phase diagrams for several familiar dynamical systems described by sets of ordinary differential equations: semiconductor lasers; electric circuits; Lorenz-84 low-order atmospheric circulation model; and Rössler and chemical oscillators. All these systems contain chaotic phases with highly complicated and interesting accumulation boundaries, curves where networks of stable islands of regular oscillations with ever-increasing periodicities accumulate systematically. The experimental exploration of such codimension-two boundaries characterized by the presence of infinite accumulation of accumulations is feasible with existing technology for some of these systems.

  2. Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3-micrometer wavelength

    Science.gov (United States)

    Gerlach, Philipp; Peschke, Martin; Wenger, Thomas; Saravanan, Brem K.; Hanke, Christian; Lorch, Steffen; Michalzik, Rainer

    2006-04-01

    We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.

  3. Attosecond timing jitter pulse trains from semiconductor saturable absorber mode-locked Cr:LiSAF lasers

    OpenAIRE

    Sennaroğlu, Alphan; Li, Duo; Demirbaş, Ümit; Benedick, Andrew; Fujimoto, James G.; Kaertner, Franz X.

    2012-01-01

    The timing jitter of optical pulse trains from diode-pumped, semiconductor saturable absorber mode-locked femtosecond Cr:LiSAF lasers is characterized by a single-crystal balanced optical cross-correlator with an equivalent sensitivity in phase noise of -235 dBc/Hz. The RMS timing jitter is 30 attoseconds integrated from 10 kHz to 50 MHz, the Nyquist frequency of the 100 MHz repetition rate oscillator. The AM-to-PM conversion induced excess phase noise is calculated and compared with experime...

  4. Anomalously high noise levels in a fibre Bragg grating semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Kurnosov, V D; Kurnosov, K V [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2015-01-31

    Taking into account gain nonlinearity allows one to obtain anomalously high noise levels in a fibre Bragg grating laser diode. This paper examines the effect of the gain nonlinearity due to spectral hole burning on noise characteristics. (lasers)

  5. Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns Project

    Data.gov (United States)

    National Aeronautics and Space Administration — While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources...

  6. Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns Project

    Data.gov (United States)

    National Aeronautics and Space Administration — While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources...

  7. Semiconductor devices incorporating multilayer interference regions

    Science.gov (United States)

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  8. Development of long wavelength semiconductor diode lasers near 28 microns for use in infrared heterodyne spectrometers

    Science.gov (United States)

    Linden, K. J.

    1984-01-01

    The development of tunable diode lasers operating in the 28 micrometers spectral region for use in infrared heterodyne spectrometers is reported. A process capable of yielding lasers emitting 500 micron W of multimode power, 112 micron W in a true single mode and true single mode operation at laser currents of up to 35% above threshold was developed. Results were obtained from narrow mesastripe (20 micrometer wide) short cavity (120 micrometer length) laser configurations. Six stripe geometry lasers, with a variety of cavity widths and lengths were delivered. The techniques to fabricate such devices was obtained and the long term reliability of such lasers by reproducible electrical and optical output characteristics fabrication from lasers are demonstrated.

  9. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    CERN Document Server

    Epperlein, Peter W

    2013-01-01

    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  10. Performance characteristics of positive and negative delayed feedback on chaotic dynamics of directly modulated InGaAsP semiconductor lasers

    Indian Academy of Sciences (India)

    Bindu M Krishna; Manu P John; V M Nandakumaran

    2008-12-01

    The chaotic dynamics of directly modulated semiconductor lasers with delayed optoelectronic feedback is studied numerically. The effects of positive and negative delayed optoelectronic feedback in producing chaotic outputs from such lasers with nonlinear gain reduction in its optimum value range is investigated using bifurcation diagrams. The results are confirmed by calculating the Lyapunov exponents. A negative delayed optoelectronic feedback configuration is found to be more effective in inducing chaotic dynamics to such systems with nonlinear gain reduction factor in the practical value range.

  11. Ion Cleaning of Facets for Improving the Reliability of High Power 980 nm Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    SHU Xiong-Wen; XU Chen; TIAN Zeng-Xia; SHEN Guang-Di

    2006-01-01

    We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold.

  12. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  13. A novel approach for generating flat optical frequency comb based on externally injected gain-switching distributed feedback semiconductor laser

    Science.gov (United States)

    Zhu, Huatao; Wang, Rong; Pu, Tao; Xiang, Peng; Zheng, Jilin; Fang, Tao

    2017-02-01

    In this paper, a novel approach for generating flat optical frequency comb (OFC) based on externally injected gain-switched distributed feedback (DFB) semiconductor laser is proposed and experimentally demonstrated. In the proposed system, the flatness, the number of OFC spectral lines, and the spectral line to background noise ratio can be tuned to their optimized values by adjusting the current of the modulation signal, the injection ratio and the detuning frequency. Since the frequency of the modulation signal decides the frequency spacing of the output spectral lines, OFC spectral lines of different spacing can be achieved. In the experiment, 10 spectral lines with 1.5 dB power variation are demonstrated to verify the proposed approach. In addition, the expansion of the spectral line is investigated.

  14. High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W

    Science.gov (United States)

    Schwarzbäck, T.; Bek, R.; Hargart, F.; Kessler, C. A.; Kahle, H.; Koroknay, E.; Jetter, M.; Michler, P.

    2013-03-01

    We demonstrate an optically pumped semiconductor disk laser (OP-SDL) using InP quantum dots (QDs) as active material fabricated by metal-organic vapor-phase epitaxy. The QDs are grown within [(Al0.1Ga0.9)0.52In0.48]0.5P0.5 (abbr. Al0.1GaInP) barriers in order to achieve an emission wavelength around 655 nm. We present optical investigations of the active region showing typical QD behavior like blue shift with increasing excitation power and single emission lines, which show anti-bunching in an intensity auto-correlation measurement. We report maximum output powers of the OP-SDL of 1.39 W at low emission wavelength of ˜654 nm with a slope efficiency of ηdiff=25.4 %.

  15. The Study on the Performance of the Wavelength Conversion Based on a Tunable External Cavity Semiconductor Laser

    Institute of Scientific and Technical Information of China (English)

    YE Yabin; ZHANG Hanyi; ZHENG Xiaoping

    2001-01-01

    In this paper, the performance of the wavelength conversion based on a tunable external cavity semiconductor laser (ECL) was studied. The static wavelength conversion was achieved in the tunable wavelength range of the ECL. The dynamic wavelength conversions of 155 Mb/s and 622 Mb/s nonreturn to zero (NRZ) signals were realized. The simulation of the ECL output characteristics using modified compound cavity rate equation shows that the higher bit rate wavelength conversion can be realized by increasing the relaxation oscillation frequency of the ECL. When the modulated bit rate is much lower than the relaxation oscillation frequency, under a fixed input signal power, there is an optimal bias current for the wavelength converter based on ECL.

  16. Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure

    Science.gov (United States)

    Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.; Asryan, L. V.

    2016-08-01

    A model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer - OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.

  17. Sub-kHz Linewidth GaSb Semiconductor Diode Lasers Operating Near 2 Micrometers

    Science.gov (United States)

    Bagheri, Mahmood; Briggs, Ryan M.; Frez, Clifford; Ksendzov, Alexander; Forouhar, Siamak

    2012-01-01

    We report on the phase noise properties of DFB lasers operating near 2.0 microns. Measured noise spectra indicate intrinsic laser linewidths below 1 kHz. An effective linewidth of less than 200 kHz for 5 ms measurement times is estimated.

  18. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled...

  19. Transverse Mode Structure and Pattern Formation in Oxide Confined Vertical Cavity Semiconductor Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Geib, K.M.; Hegarty, S.P.; Hou, H.Q.; Huyet, G.; McInerney, J.G.; Porta, P.

    1999-07-06

    We analyze the transverse profiles of oxide-confined vertical cavity laser diodes as a function of aperture size. For small apertures we demonstrate that thermal lensing can be the dominant effect in determining the transverse resonator properties. We also analyze pattern formation in lasers with large apertures where we observe the appearance of tilted waves.

  20. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    Science.gov (United States)

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-08

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm.

  1. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-09-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  2. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-01-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  3. Characterization of semiconductor-laser phase noise and estimation of bit-error rate performance with low-speed offline digital coherent receivers.

    Science.gov (United States)

    Kikuchi, Kazuro

    2012-02-27

    We develop a systematic method for characterizing semiconductor-laser phase noise, using a low-speed offline digital coherent receiver. The field spectrum, the FM-noise spectrum, and the phase-error variance measured with such a receiver can completely describe phase-noise characteristics of lasers under test. The sampling rate of the digital coherent receiver should be much higher than the phase-fluctuation speed. However, 1 GS/s is large enough for most of the single-mode semiconductor lasers. In addition to such phase-noise characterization, interpolating the taken data at 1.25 GS/s to form a data stream at 10 GS/s, we can predict the bit-error rate (BER) performance of multi-level modulated optical signals at 10 Gsymbol/s. The BER degradation due to the phase noise is well explained by the result of the phase-noise measurements.

  4. Low SWaP Semiconductor Laser Transmitter Modules For ASCENDS Mission Applications

    Science.gov (United States)

    Prasad, Narasimha S.; Rosiewicz, Alex; Coleman, Steven M.

    2012-01-01

    The National Research Council's (NRC) Decadal Survey (DS) of Earth Science and Applications from Space has identified the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) as an important atmospheric science mission. NASA Langley Research Center, working with its partners, is developing fiber laser architecture based intensity modulated CW laser absorption spectrometer for measuring XCO2 in the 1571 nm spectral band. In support of this measurement, remote sensing of O2 in the 1260 nm spectral band for surface pressure measurements is also being developed. In this paper, we will present recent progress made in the development of advanced transmitter modules for CO2 and O2 sensing. Advanced DFB seed laser modules incorporating low-noise variable laser bias current supply and low-noise variable temperature control circuit have been developed. The 1571 nm modules operate at >80 mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2 pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7 pm/mV. Heterodyne linewidth measurements have been performed showing linewidth 200 kHz and frequency jitter 75 MHz. In the case of 1260 nm DFB laser modules, we have shown continuous tuning over a range of 1261.4 - 1262.6 nm by changing chip operating temperature and 1261.0 - 1262.0 nm by changing the laser diode drive level. In addition, we have created a new laser package configuration which has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser module by a factor of 2.

  5. Closure of incision in cataract surgery in-vivo using a temperature controlled laser soldering system based on a 1.9μm semiconductor laser

    Science.gov (United States)

    Gabay, Ilan; Basov, Svetlana; Varssano, David; Barequet, Irina; Rosner, Mordechai; Rattunde, Marcel; Wagner, Joachim; Platkov, Max; Harlev, Mickey; Rossman, Uri; Katzir, Abraham

    2016-03-01

    In phacoemulsification-based cataract surgery, a corneal incision is made and is then closed by hydration of the wound lips, or by suturing. We developed a system for sealing such an incision by soldering with a semiconductor disk laser (λ=1.9μm), under close temperature control. The goal was to obtain stronger and more watertight adhesion. The system was tested on incisions in the corneas of 15 eyes of pigs, in-vivo. Optical Coherent Tomography (OCT) and histopathologic examination showed little thermal damage and good apposition. The measured average burst pressure was 1000+/-30mmHg. In the future, this method wound may replace suturing of corneal wounds, including in traumatic corneal laceration and corneal transplantation.

  6. Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

    Science.gov (United States)

    Chen, Cheng; Zhao, Ling-Juan; Qiu, Ji-Fang; Liu, Yang; Wang, Wei; Lou, Cai-Yun

    2012-09-01

    We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.

  7. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Science.gov (United States)

    2014-01-01

    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. PMID:25147848

  8. Theoretical modeling of intensity noise in InGaN semiconductor lasers.

    Science.gov (United States)

    Ahmed, Moustafa

    2014-01-01

    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  9. Control of dynamical instability in semiconductor quantum nanostructures diode lasers: role of phase-amplitude coupling

    CERN Document Server

    Kumar, Pramod

    2013-01-01

    We numerically investigate the complex nonlinear dynamics for two independent coupled lasers systems consisting of (i) mutually delay-coupled edge emitting diode lasers and (ii) injection-locked quantum nano-structures lasers. A comparative study in dependence on the dynamical role of alpha parameter, that determines phase-amplitude coupling of the optical field, in both the cases is probed. The variation of alpha leads to conspicuous changes of the dynamics of both the systems, which are characterized and investigated as a function of optical injection strength for the fixed coupled-cavity delay time. Our analysis is based on the observation that the cross-correlation and bifurcation measures unveil the signature of enhancement of amplitude-death islands in which the coupled lasers mutually stay in stable phase-locked states. In addition, we provide a qualitative understanding of the physical mechanisms underlying the observed dynamical behavior and its dependence on alpha. The amplitude death and existence ...

  10. Impulse-coupling coefficients from a pulsed-laser ablation of semiconductor GaAs

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Impulse-coupling coefficients from 1.06 - μm, 10-ns Nd:YAG pulsed-laser radiation to GaAs targets with different areas were measured using the ballistic pendulum method in the laser power density ranging from 4.0 × 108 to 5.0 × 109 W·cm-2.A detonation wave model of the plasma was established theoretically. The expansion process of plasma after the laser pulse ends is described in detail, and the impulse-coupling coefficients from pulsed laser with different energies to GaAs with different areas were calculated using the given model. It is found that the theoretical results agree well with the experimental data.

  11. A Power-Controllable Semiconductor Fiber Ring Laser and its Applications

    Institute of Scientific and Technical Information of China (English)

    Z.G.; Lu; C.P.; Grover

    2003-01-01

    A stable and power controllable laser with larger than 17-dB output power range is presented. Based on this device, a novel optical amplifier with the power transit immune behaviors has been demonstrated.

  12. Quasi-soliton generation in solid-state lasers with semiconductor saturable absorber

    Institute of Scientific and Technical Information of China (English)

    Palihati Mijeti(帕力哈提·米吉提); Tursunjan Ablekim(吐尔逊江·阿布力克木)

    2004-01-01

    Recent advances in ultrafast, ultra-short solid-state lasers have resulted in sub-6 fs pulses generated directly from the cavity of Ti:sapphire lasers. The generation of extremely short pulses is possible due to the formation of a quasi-Schrodinger soliton. Our investigation is directed to the peculiarities of the transition between femtosecond to picosecond generation. We found that the above transition is accompanied by the threshold and hysteresis phenomena. On the basis of soliton perturbation theory, the numerical simulation studying two different experimental situations has been performed, the first situation corresponds to the study of the lasers field's parameters under variation of control parameters (dispersion or pump power), the second one is for continuous variation of control parameter within a single generation session. Physically it corresponds to not repeated laser session but the variation of control parameter when the pulse has formed already.

  13. Proposed Rabi-Kondo correlated state in a laser-driven semiconductor quantum dot.

    Science.gov (United States)

    Sbierski, B; Hanl, M; Weichselbaum, A; Türeci, H E; Goldstein, M; Glazman, L I; von Delft, J; Imamoğlu, A

    2013-10-11

    Spin exchange between a single-electron charged quantum dot and itinerant electrons leads to an emergence of Kondo correlations. When the quantum dot is driven resonantly by weak laser light, the resulting emission spectrum allows for a direct probe of these correlations. In the opposite limit of vanishing exchange interaction and strong laser drive, the quantum dot exhibits coherent oscillations between the single-spin and optically excited states. Here, we show that the interplay between strong exchange and nonperturbative laser coupling leads to the formation of a new nonequilibrium quantum-correlated state, characterized by the emergence of a laser-induced secondary spin screening cloud, and examine the implications for the emission spectrum.

  14. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Moustafa Ahmed

    2014-01-01

    Full Text Available This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN. We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  15. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  16. Tunable Oscillations in Optically Injected Semiconductor Lasers With Reduced Sensitivity to Perturbations - Postprint

    Science.gov (United States)

    2014-09-01

    promise for improved operation of tunable photonic oscillators for radio- and microwave-frequency applications. 15. SUBJECT TERMS laser tuning...laser power oscillation frequency to perturbations offer the promise for improved operation of tunable photonic oscillators for radio- and microwave...aspect of this paper: Photonic oscillators have been proposed for a variety of applications and the discovery of these operating points shows that the

  17. Experimental and numerical study of the symbolic dynamics of modulated semiconductor lasers with optical feedback

    OpenAIRE

    Torrentino, Taciano

    2015-01-01

    El objetivo de esta tesis es investigar la influencia de la modulación de corriente sobre la dinámica de los láseres semiconductores con realimentación óptica en el regimen de fluctuaciones de baja frequencia (low-frequency fluctuations, o LFF) . En este regimen la intensidad de la salida del láser muestra caídas abruptas y aparentemente aleatorias que son similares, en algunas propiedades estadísticas, a los spikes neuronales excitables. Largas series temporales, que contienen decenas de est...

  18. Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

    Science.gov (United States)

    Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.

    2001-01-01

    Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

  19. Wavelength-tunable 10 GHz actively harmonic mode-locked fiber laser based on semiconductor optical amplifier

    Science.gov (United States)

    Mao, Yan; Tong, Xinglin; Wang, Zhiqiang; Zhan, Li; Hu, Pan; Chen, Liang

    2015-12-01

    We demonstrate a widely wavelength-tunable actively mode-locked fiber laser based on semiconductor optical amplifier. Beneficiating from the actively mode-locking operation and the wavelength-tunable characteristics of a Fabry-Perot filter, different harmonic mode-locking orders, from the fundamental mode-locking order (18.9 MHz) to the 520th order (9.832 GHz), can be easily achieved. The spectral bandwidth corresponding to the fundamental repetition rate is 0.12 nm with the pulse duration of 9.8 ns, leading to the TBP value of 146, which is about 460 times the transform-limited value for soliton pulse. The highest repetition rate of the mode-locked pulses we obtained is 9.832 GHz, with a signal-to-noise ratio up to 50 dB. The theoretical transform-limited pulse duration is 21 ps. Meanwhile, the central wavelength can be continuously tuned over 43.4 nm range (1522.8-1566.2 nm). The higher repetition rate and the widely tuning wavelength range make the fiber laser to own great potential and promising prospects in areas such as optical communication and photonic analog-to-digital conversion (ADC).

  20. Control of dynamical instability in semiconductor quantum nanostructures diode lasers: Role of phase-amplitude coupling

    Science.gov (United States)

    Kumar, P.; Grillot, F.

    2013-07-01

    We numerically investigate the complex nonlinear dynamics for two independently coupled laser systems consisting of (i) mutually delay-coupled edge emitting diode lasers and (ii) injection-locked quantum nanostructures lasers. A comparative study in dependence on the dynamical role of α parameter, which determine the phase-amplitude coupling of the optical field, in both the cases is probed. The variation of α lead to conspicuous changes in the dynamics of both the systems, which are characterized and investigated as a function of optical injection strength η for the fixed coupled-cavity delay time τ. Our analysis is based on the observation that the cross-correlation and bifurcation measures unveil the signature of enhancement of amplitude-death islands in which the coupled lasers mutually stay in stable phase-locked states. In addition, we provide a qualitative understanding of the physical mechanisms underlying the observed dynamical behavior and its dependence on α. The amplitude death and the existence of multiple amplitude death islands could be implemented for applications including diode lasers stabilization.

  1. Electrostatic acceleration and deflection system for modification of semiconductor materials in laser-produced ion implantation

    Science.gov (United States)

    Rosinski, M.; Parys, P.; Wolowski, J.; Gasior, P.; Pisarek, M.

    2010-10-01

    To optimize the efficiency of laser ion implantation technology, it is advisable to properly select the laser beam characteristics (i.e. power density, target illumination geometry, etc.). In many applications, it is important to select a specific range of ion energy to implant the ions at a given depth and at a given density. To make it possible, the electrostatic system for acceleration and deflection of low-energy laser-produced ions can be used. This contribution provides a description of the experiments aimed at the implantation of Ge ions from a narrow energy band onto SiO2/Si substrates, which were conducted at IPPLM. As the source of irradiation, we used a Nd:YAG up to 10 Hz laser system with pulse duration of 3.5 ns and pulse energy ∼ 0.5 J, which gave a power density of 1010 W/cm2. The ion stream parameters were measured using the time-of-fight method. The laser-produced ions passing through the diaphragm have been accelerated in the system of electrodes. Due to the electrostatic field configuration provided by the electrode system and a diaphragm located at the axis of the system, the selected ions were focussed at the area of interest to increase implantation density. The accelerating voltage, the distance of the diaphragm from the target, the diaphragm diameter and the gap width between electrodes were changed for choosing the desired parameters of the ion stream.

  2. Quantitative identification of dynamical transitions in a semiconductor laser with optical feedback

    Science.gov (United States)

    Quintero-Quiroz, C.; Tiana-Alsina, J.; Romà, J.; Torrent, M. C.; Masoller, C.

    2016-01-01

    Identifying transitions to complex dynamical regimes is a fundamental open problem with many practical applications. Semi- conductor lasers with optical feedback are excellent testbeds for studying such transitions, as they can generate a rich variety of output signals. Here we apply three analysis tools to quantify various aspects of the dynamical transitions that occur as the laser pump current increases. These tools allow to quantitatively detect the onset of two different regimes, low-frequency fluctuations and coherence collapse, and can be used for identifying the operating conditions that result in specific dynamical properties of the laser output. These tools can also be valuable for analyzing regime transitions in other complex systems. PMID:27857229

  3. High frequency optoelectronic oscillators based on the optical feedback of semiconductor mode-locked laser diodes.

    Science.gov (United States)

    Haji, Mohsin; Hou, Lianping; Kelly, Anthony E; Akbar, Jehan; Marsh, John H; Arnold, John M; Ironside, Charles N

    2012-01-30

    Optical self seeding feedback techniques can be used to improve the noise characteristics of passively mode-locked laser diodes. External cavities such as fiber optic cables can increase the memory of the phase and subsequently improve the timing jitter. In this work, an improved optical feedback architecture is proposed using an optical fiber loop delay as a cavity extension of the mode-locked laser. We investigate the effect of the noise reduction as a function of the loop length and feedback power. The well known composite cavity technique is also implemented for suppressing supermode noise artifacts presented due to harmonic mode locking effects. Using this method, we achieve a record low radio frequency linewidth of 192 Hz for any high frequency (>1 GHz) passively mode-locked laser to date (to the best of the authors' knowledge), making it promising for the development of high frequency optoelectronic oscillators.

  4. Four-wave mixing analysis of quantum dot semiconductor lasers for linewidth enhancement factor extraction.

    Science.gov (United States)

    Lin, Chih-Hao; Lin, Hung-Hsin; Lin, Fan-Yi

    2012-01-02

    We apply a four-wave mixing analysis on a quantum dot laser to simultaneously obtain the linewidth enhancement factor α and other intrinsic laser parameters. By fitting the experimentally obtained regenerative signals and power spectra at different detuning frequencies with the respective curves analytically calculated from the rate equations, parameters including the linewidth enhancement factor, the carrier decay rate in the dots, the differential gain, and the photon decay rate can be determined all at once under the same operating conditions. In this paper, a theoretical model for the four-wave mixing analysis of the QD lasers is derived and verified. The sensitivity and accuracy of the parameter extraction using the four-wave mixing method are presented. Moreover, how each each parameters alter the shapes of the regenerative signals and the power spectra are also discussed.

  5. Numerical study of high-power semiconductor lasers for operation at sub-zero temperatures

    Science.gov (United States)

    Hasler, K. H.; Frevert, C.; Crump, P.; Erbert, G.; Wenzel, H.

    2017-04-01

    We present results on the impact of the Al-content in the waveguide structure on the electro-optical characteristics of 9xx nm, GaAs-based high-power lasers operated at room (300 K) and at sub-zero (200 K) heat sink temperatures. Experimentally a strong improvement of conversion efficiency and output power has been found if the lasers are cooled down. Numerical simulations using a software tool which solves the thermo-dynamic based drift-diffusion equations are able to reproduce the experimental findings. The reasons for the improved performance at lower temperatures are the enhancement of the modal gain and the reduced accumulation of electrons in the p-confinement layers resulting in a reduction of the leakage current. The latter allows the realization of lasers with a reduced Al content having a smaller series resistance and thus further enlarged conversion efficiency at sub-zero temperatures.

  6. Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Heinrich, Martin, E-mail: mh.seris@gmail.com [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456 (Singapore); Kluska, Sven; Binder, Sebastian [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg (Germany); Hameiri, Ziv [The School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney NSW 2052 (Australia); Hoex, Bram [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117456 (Singapore)

    2014-10-07

    It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like sample size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from sample size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions.

  7. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    Science.gov (United States)

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  8. Heterogeneous Integration for Reduced Phase Noise and Improved Reliability of Semiconductor Lasers

    Science.gov (United States)

    Srinivasan, Sudharsanan

    Significant savings in cost, power and space are possible in existing optical data transmission networks, sensors and metrology equipment through photonic integration. Photonic integration can be broadly classified into two categories, hybrid and monolithic integration. The former involves assembling multiple single functionality optical devices together into a single package including any optical coupling and/or electronic connections. On the other hand monolithic integration assembles many devices or optical functionalities on a single chip so that all the optical connections are on chip and require no external alignment. This provides a substantial improvement in reliability and simplifies testing. Monolithic integration has been demonstrated on both indium phosphide (InP) and silicon (Si) substrates. Integration on larger 300mm Si substrates can further bring down the cost and has been a major area of research in recent years. Furthermore, with increasing interest from industry, the hybrid silicon platform is emerging as a new technology for integrating various active and passive optical elements on a single chip. This is both in the interest of bringing down manufacturing cost through scaling along with continued improvement in performance and to produce multi-functional photonic integrated circuits (PIC). The goal of this work is twofold. First, we show four laser demonstrations that use the hybrid silicon platform to lower phase noise due to spontaneous emission, based on the following two techniques, viz. confinement factor reduction and negative optical feedback. The first two demonstrations are of mode-locked lasers and the next two are of tunable lasers. Some of the key results include; (a) 14dB white frequency noise reduction of a 20GHz radio-frequency (RF) signal from a harmonically mode-locked long cavity laser with greater than 55dB supermode noise suppression, (b) 8dB white frequency noise reduction from a colliding pulse mode-locked laser by

  9. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Science.gov (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  10. Orbital photocurrents induced by terahertz laser radiation in multi-valley semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karch, Johannes

    2011-07-01

    The investigation of photo induced electric currents in the terahertz frequency range is a vastly efficient tool for the study of nonequilibrium processes in low-dimensional structures. In this work, non-linear transport phenomena in graphene as well as in silicon - both being multi-valley semiconductors - driven by the free-carrier absorption of electromagnetic radiation are explored. It is demonstrated that the individual control of electron fluxes in different valleys can be achieved by the excitation of valley degenerate structures with polarized light. Moreover, the experiments together with theoretical considerations show that the microscopic origins of these currents are mainly orbital mechanisms. Thus, novel models of photocurrents are developed, where the charge carriers' orbital motion is caused by the crossed alternating electric and magnetic field components of the incident radiation. Under asymmetric photoexcitation or relaxation, this may result in a directed electric current. (orig.)

  11. Tunable mode-locked semiconductor laser with Bragg mirror external cavity

    DEFF Research Database (Denmark)

    Yvind, Kresten; Jørgensen, T.; Birkedal, Dan

    2002-01-01

    We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have...

  12. Picosecond optical pulse generation at gigahertz rates by direct modulation of a semiconductor laser

    Science.gov (United States)

    Auyeung, J.

    1981-01-01

    We report the generation of picosecond pulses by the direct modulation of a buried heterostructure GaAlAs diode laser. Pulse width of 28 ps is achieved at a repetition frequency of 2.5 GHz. Pulse width dependence on the experimental parameters is described.

  13. Ultrafast Time Resolved X-ray Diffraction Studies of Laser Heated Metals and Semiconductors

    Science.gov (United States)

    Chen, Peilin; Tomov, I. V.; Rentzepis, P. M.

    1998-03-01

    Time resolved hard x-ray diffraction has been employed to study the dynamics of lattice structure deformation. When laser pulse energy is deposited in a material it generates a non uniform transient temperature distribution, which alters the lattice structure of the crystal. The deformed crystal lattice will change the angle of diffraction for a monochromatic x-ray beam. We report picosecond and nanosecond time resolved x-ray diffraction measurements of the lattice temperature distribution, transient structure and stress, in Pt (111) and GaAs (111) crystals, caused by pulsed UV laser irradiation. An ArF excimer laser operated at 300 Hz was used, both, to drive an x-ray diode with copper anode and heat the crystal. Bragg diffracted x-ray radiation was recorded by a direct imaging x-ray CCD. Changes in the diffraction patterns induced by a few millijouls pulse energy were observed at different time delays between the laser heating pulse and the x-ray probing pulse. A kinematical model for time resolved x-ray diffraction was used to analyze the experimental data. Good agreement between the measured and calculated scattered x-ray intensities profiles was achieved, indicating that detailed time resolved x-ray diffraction measurements can be made with nanosecond and picosecond resolution for small temperature changes. Our system can detect changes in the lattice spacing of about 10-3 A.

  14. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

    DEFF Research Database (Denmark)

    Ziegler, Mathias; Hempel, Martin; Larsen, Henning Engelbrecht

    2010-01-01

    The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns...

  15. Generation of a CW local oscillator signal using a stabilized injection locked semiconductor laser

    Science.gov (United States)

    Pezeshki, Jonah Massih

    In high speed-communications, it is desirable to be able to detect small signals while maintaining a low bit-error rate. Conventional receivers for high-speed fiber optic networks are Amplified Direct Detectors (ADDs) that use erbium-doped fiber amplifiers (EDFAs) before the detector to achieve a suitable sensitivity. In principle, a better method for obtaining the maximum possible signal to noise ratio is through the use of homodyne detection. The major difficulty in implementing a homodyne detection system is the generation of a suitable local oscillator signal. This local oscillator signal must be at the same frequency as the received data signal, as well as be phase coherent with it. To accomplish this, a variety of synchronization techniques have been explored, including Optical Phase-Lock Loops (OPLL), Optical Injection Locking (OIL) with both Fabry-Perot and DFB lasers, and an Optical Injection Phase-Lock Loop (OIPLL). For this project I have implemented a method for regenerating a local oscillator from a portion of the received optical signal. This regenerated local oscillator is at the same frequency, and is phase coherent with, the received optical signal. In addition, we show that the injection locking process can be electronically stabilized by using the modulation transfer ratio of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ˜1GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.

  16. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  17. Characterization of a High-SpeedHigh-Power Semiconductor Master-Oscillator Power-Amplifier (MOPA) Laser as a Free-Space Transmitter

    Science.gov (United States)

    Wright, M. W.

    2000-04-01

    Semiconductor lasers offer promise as high-speed transmitters for free-space optical communication systems. This article examines the performance of a semiconductor laser system in a master-oscillator power-amplifier (MOPA) geometry developed through a Small Business Innovation Research (SBIR) contract with SDL, Inc. The compact thermo-electric cooler (TEC) packaged device is capable of 1-W output optical power at greater than 2-Gb/s data rates and a wavelength of 960 nm. In particular, we have investigated the effects of amplified spontaneous emission on the modulation extinction ratio and bit-error rate (BER) performance. BERs of up to 10^(-9) were possible at 1.4 Gb/s; however, the modulation extinction ratio was limited to 6 dB. Other key parameters for a free-space optical transmitter, such as the electrical-optical efficiency (24 percent) and beam quality, also were measured.

  18. Tunable THz Generation by the Interaction of a Super-luminous Laser Pulse with Biased Semiconductor Plasma

    Science.gov (United States)

    Papadopoulos, K.; Zigler, A.

    2006-01-01

    Terahertz (THz) radiation is electromagnetic radiation in the range between several hundred and a few thousand GHz. It covers the gap between fast-wave electronics (millimeter waves) and optics (infrared). This spectral region offers enormous potential for detection of explosives and chemical/biological agents, non-destructive testing of non-metallic structural materials and coatings of aircraft structures, medical imaging, bio-sensing of DNA stretching modes and high-altitude secure communications. The development of these applications has been hindered by the lack of powerful, tunable THz sources with controlled waveform. The need for such sources is accentuated by the strong, but selective absorption of THz radiation during transmission through air with high vapor content. The majority of the current experimental work relies on time-domain spectroscopy using fast electrically biased photoconductive sources in conjunction with femto-second mode-locked Ti:Sapphire lasers. These sources known as Large Aperture Photoconductive Antennas (LAPA) have very limited tunability, relatively low upper bound of power and no bandwidth control. The paper presents a novel source of THz radiation known as Miniature Photoconductive Capacitor Array (MPCA). Experiments demonstrated tunability between .1 - 2 THz, control of the relative bandwidth Δf/f between .5-.01, and controlled pulse length and pulse waveform (temporal shape, chirp, pulse-to-pulse modulation etc.). Direct scaling from the current device indicates efficiency in excess of 30% at 1 THz with 1/f2 scaling at higher frequencies, peak power of 100 kW and average power between .1-1 W. The physics underlying the MPCA is the interaction of a super-luminous ionization front generated by the oblique incidence of a Ti:Sapphire laser pulse on a semiconductor crystal (ZnSe) biased with an alternating electrostatic field, similar to that of a frozen wave generator. It is shown theoretically and experimentally that the

  19. A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    王勇刚; 马骁宇; 李春勇; 张治国; 张丙元; 张志刚

    2003-01-01

    We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror(SESAM)from which we achieved a 10ps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature.The recovery time was measured to be 0.5 ps,indicating the potential pulse compression to sub-picoseconds.

  20. Direct growth of CdSe semiconductor quantum dots in glass matrix by femtosecond laser beam

    Science.gov (United States)

    Bell, G.; Filin, A. I.; Romanov, D. A.; Levis, R. J.

    2016-02-01

    Controllable, spatially inhomogeneous distributions of CdSe nanocrystals smaller than the exciton Bohr radius are grown in a glass matrix under combined action of sample heating (below the transformation temperature) and focused high-repetition femtosecond (fs) laser beam. Selective quantum dot precipitation is evidenced by position-dependent absorption and Raman spectra. The particle size is estimated as r = 2.1 ± 0.3 nm by comparing the measured absorption and Raman spectra with those obtained from the samples grown in glass by traditional heat-treatment procedure. Direct growth of CdSe quantum dots in glass is enabled by nonlinear excitation using a focused fs duration laser beam (as differentiated from other methods), and this opens an avenue for adjustable selective growth patterns.

  1. Study of single-frequency semiconductor lasers using a fiber Michelson interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Belovolov, M.I.; Gur' ianov, A.N.; Gusovskii, D.D.; Dianov, E.M.; Kuznetsov, A.V.

    1987-04-01

    A fiber Michelson interferometer, an analog of a scanning Michelson interferometer, has been developed on the basis of single-mode waveguides and several highly directional Y-type couplers at a wavelength of 0.85 micron. It is demonstrated that the newly developed interferometer can be used for investigating the coherent properties of the emission of single-frequency lasers with a spectral bandwidth of 10 kHz - 1 GHz. Empirical expressions are obtained which relate the degree of coherence to the optical path difference of the emission of CW single-frequency AlGaAs double heterostructure lasers with an external dispersive cavity under conditions of the self-stabilization of single-frequency emission. 9 references.

  2. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors

    CERN Document Server

    Zhao, G; Deppe, D G; Konthasinghe, K; Muller, A

    2012-01-01

    We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\\rm th}$ = 10 mW ($\\lambda_{\\rm p}$ = 808 nm). The laser linewidth was found to be $\\approx$3 GHz at $P_{\\rm p}\\approx$ 5 $P_{\\rm th}$.

  3. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves

    Science.gov (United States)

    2017-02-11

    September 2014. Experimental control of laser optical spikes via direct current modulation, presented by C. Quintero- Quiroz . IV.4. Collaborators and people...changes in dynamical systems using symbolic networks, New Journal of Physics 17, 023068 (2015). 4. T. Sorrentino, C. Quintero- Quiroz , A. Aragoneses, M...Express 23, 5571 (2015). 5. T. Sorrentino, C. Quintero- Quiroz , M. C. Torrent, and C. Masoller, Analysis of the Spike Rate and Spike Correlations in

  4. 980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

    Institute of Scientific and Technical Information of China (English)

    Xin GAO; Baoxue BO; Yi QU; Jing ZHANG; Hui LI

    2007-01-01

    980 nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient.The highest CW (continuous wave) output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.

  5. Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser

    Institute of Scientific and Technical Information of China (English)

    Jialiang Jin; Lei Wang; Jianjun He

    2012-01-01

    Consecutive wavelength switching characteristics of a simple,compact,and digitally wavelength-switchable laser based on V-coupled cavities are reported.Wavelength switching through thermal and carrier injection effects is examined.Without using band gap engineering for the tuning section,26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects,respectively.The performances of these two tuning schemes are then compared.

  6. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

    Science.gov (United States)

    Patil, Ranjit A.; Wei, Mao-Kuo; Yeh, P.-H.; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-01

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes

  7. Subharmonic resonant optical excitation of confined acoustic modes in a free-standing semiconductor membrane at GHz frequencies with a high-repetition-rate femtosecond laser.

    Science.gov (United States)

    Bruchhausen, A; Gebs, R; Hudert, F; Issenmann, D; Klatt, G; Bartels, A; Schecker, O; Waitz, R; Erbe, A; Scheer, E; Huntzinger, J-R; Mlayah, A; Dekorsy, T

    2011-02-18

    We propose subharmonic resonant optical excitation with femtosecond lasers as a new method for the characterization of phononic and nanomechanical systems in the gigahertz to terahertz frequency range. This method is applied for the investigation of confined acoustic modes in a free-standing semiconductor membrane. By tuning the repetition rate of a femtosecond laser through a subharmonic of a mechanical resonance we amplify the mechanical amplitude, directly measure the linewidth with megahertz resolution, infer the lifetime of the coherently excited vibrational states, accurately determine the system's quality factor, and determine the amplitude of the mechanical motion with femtometer resolution.

  8. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities.

    Science.gov (United States)

    Zhu, X; Cassidy, D T

    1996-08-20

    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  9. Toward realizing high power semiconductor terahertz laser sources at room temperature

    Science.gov (United States)

    Razeghi, Manijeh

    2011-05-01

    The terahertz (THz) spectral range offers promising applications in science, industry, and military. THz penetration through nonconductors (fabrics, wood, plastic) enables a more efficient way of performing security checks (for example at airports), as illegal drugs and explosives could be detected. Being a non-ionizing radiation, THz radiation is environment-friendly enabling a safer analysis environment than conventional X-ray based techniques. However, the lack of a compact room temperature THz laser source greatly hinders mass deployment of THz systems in security check points and medical centers. In the past decade, tremendous development has been made in GaAs/AlGaAs based THz Quantum Cascade Laser (QCLs), with maximum operating temperatures close to 200 K (without magnetic field). However, higher temperature operation is severely limited by a small LO-phonon energy (~ 36 meV) in this material system. With a much larger LO-phonon energy of ~ 90 meV, III-Nitrides are promising candidates for room temperature THz lasers. However, realizing high quality material for GaN-based intersubband devices presents a significant challenge. Advances with this approach will be presented. Alternatively, recent demonstration of InP based mid-infrared QCLs with extremely high peak power of 120 W at room temperature opens up the possibility of producing high power THz emission with difference frequency generation through two mid-infrared wavelengths.

  10. 10  GHz pulse repetition rate Er:Yb:glass laser modelocked with quantum dot semiconductor saturable absorber mirror.

    Science.gov (United States)

    Resan, B; Kurmulis, S; Zhang, Z Y; Oehler, A E H; Markovic, V; Mangold, M; Südmeyer, T; Keller, U; Hogg, R A; Weingarten, K J

    2016-05-10

    Semiconductor saturable absorber mirror (SESAM) modelocked high pulse repetition rate (≥10  GHz) diode-pumped solid-state lasers are proven as an enabling technology for high data rate coherent communication systems owing to their low noise and high pulse-to-pulse optical phase-coherence. Compared to quantum well, quantum dot (QD)-based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the first 10 GHz pulse repetition rate QD-SESAM modelocked laser at 1.55 μm, exhibiting 2 ps pulse width from an Er-doped glass oscillator (ERGO). The 10 GHz ERGO laser is modelocked with InAs/GaAs QD-SESAM with saturation fluence as low as 9  μJ/cm2.

  11. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Fritz, I.J.; Klem, J.F.; Hafich, M.J. [and others

    1997-04-01

    This report summarizes research completed under a Laboratory Directed Research and Development program funded for part of FY94, FY95 and FY96. The main goals were (1) to develop novel, compound-semiconductor based optical sources to enable field-based detection of environmentally important chemical species using miniaturized, low-power, rugged, moderate cost spectroscopic equipment, and (2) to demonstrate the utility of near-infrared spectroscopy to quantitatively measure contaminants. Potential applications would include monitoring process and effluent streams for volatile organic compound detection and sensing head-space gasses in storage vessels for waste management. Sensing is based on absorption in the 1.3-1.9 {mu}m band from overtones of the C-H, N-H and O-H stretch resonances. We describe work in developing novel broadband light-emitting diodes emitting over the entire 1.4-1.9 {mu}m wavelength range, first using InGaAs quantum wells, and second using a novel technique for growing digital-alloy materials in the InAlGaAs material system. Next we demonstrate the utility of near-infrared spectroscopy for quantitatively determining contamination of soil by motor oil. Finally we discuss the separability of different classes of organic compounds using near-infrared spectroscopic techniques.

  12. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers

    Science.gov (United States)

    2016-03-01

    y) is the FCA cross-section, µ (y) is the carrier mobility, A is the area of electrical injection, and q is the elementary charge constant. As will...must be adjusted according to this prescription (αi cannot be freely adjusted because it is fixed by the optimization procedure). Generally speaking ...10%. As pointed out earlier, κ0 determines a priori the peak achievable efficiency of a laser. The lower the value of κ0 is, the higher PCE one can

  13. International Semiconductor Laser Conference. Held in Boston, Massachusetts on August 29 - September 1, 1988

    Science.gov (United States)

    1988-11-01

    195 0:3 2:30 pm Reduction of Spectral Chirping in Modulation Doped Multiquantum Well (MD-MQW) Lasers K. Uomi, N. Chinone, and T Mishima , Hitachi, Ltd...Wavelength Masayuki Ishikawa, Hajime Okuda, Hideo Shiozawa, Kazuhiko Itaya, Gen-ichi Hatakoshi, Yukio Watanabe, Koichi Nitta and Yutaka Uematsu...1987). 3 P. L. Derry, el al., Appl. Phys. Lett., 50, p. 1773 (1987). 4 K. Uomi, T. Mishima , and N. Chinone, Appi. Phye. Lett., 51, p. 78 (1987). 1.0 1.0

  14. Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers

    Science.gov (United States)

    Annabi Milani, E.; Mohadesi, V.; Asgari, A.

    2017-04-01

    In this study, the effects of GaN capping layer on the behaviour of AlGaN/GaN nanostructure based laser is considered. We have employed the self-consistent solution of Poisson and Schrodinger equations for calculation of the energy levels, wave functions and conduction and valance bands profile. The impact of different thicknesses of the capping layer has been studied for sheet carrier density, then on optical gain. The results indicate that, by increasing the thickness of the cap layer, the optical gain decreases.

  15. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...... to investigate the performance of a MQW buried heterostructure laser. Results from numerical simulations show that the optimum driving conditions for achieving the shortest pulses with minimum timing jitter occur for large reverse bias in the absorber section at an optimum optical bandwidth limited by Gordon...

  16. The pressure and temperature dependence of vertical cavity surface emitting semiconductor lasers

    CERN Document Server

    Knowles, G

    2002-01-01

    The factors affecting the performance of GalnP/AIGalnP vertical-cavity surface-emitting lasers (VCSELs) emitting at an attenuation minimum of PMMA plastic optical fibres (650nm) have been investigated. Using wide temperature-range and high pressure measurement techniques on equivalent (i.e the same active region) edge emitting lasers (EELs), emitting at 672nm, the temperature sensitive leakage current into the indirect X-minima is shown to be approx 20% of the total threshold current at room temperature. This is then estimated to rise to approx 70% for 655nm emission, but may be reduced to approx 50% by using a graded-index separate confinement heterostructure (GRINSCH). By making the same measurements on the full VCSEL structures and using a combination of thermal and gain spectrum models the performance modifying effect of the Bragg stacks have then been evaluated. It is found that temperature dependent tuning/detuning of the gain-peak and the cavity mode is significant at low temperature due to the relativ...

  17. Semiconductor diode laser material and devices with emission in visible region of the spectrum

    Science.gov (United States)

    Ladany, I.; Kressel, H.

    1975-01-01

    Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

  18. A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers. 2; Numerical Results

    Science.gov (United States)

    Li, Jianzhong; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

    2001-01-01

    We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.

  19. Measurements of nonlinear lensing in a semiconductor disk laser gain sample under optical pumping and using a resonant femtosecond probe laser

    Science.gov (United States)

    Quarterman, A. H.; Mirkhanov, S.; Smyth, C. J. C.; Wilcox, K. G.

    2016-09-01

    Accurate characterizations of the nonlinear refractive index of semiconductor disk laser (SDL) gain samples are of critical importance for understanding the behavior of self-mode-locked SDLs. Here we describe measurements of nonlinear lensing in an SDL gain sample for a wide range of optical pump intensities and using a probe which is on resonance with the quantum wells in the SDL gain sample and whose intensity, pulse duration, and spot size are chosen to be similar to those reported in self-mode-locked SDLs. Under these conditions, we determine an effective value of the nonlinear refractive index, n2 = -6.5 × 10-13 cm2/W at zero pump intensity, and find that the value of n2 changes by less than 25% over the range of pump intensities studied. The nonlinear refractive index is measured using a variation on the well-established z-scan technique, which was modified to make it better suited to the measurement of optically pumped samples.

  20. 640-Gbit/s fast physical random number generation using a broadband chaotic semiconductor laser

    Science.gov (United States)

    Zhang, Limeng; Pan, Biwei; Chen, Guangcan; Guo, Lu; Lu, Dan; Zhao, Lingjuan; Wang, Wei

    2017-01-01

    An ultra-fast physical random number generator is demonstrated utilizing a photonic integrated device based broadband chaotic source with a simple post data processing method. The compact chaotic source is implemented by using a monolithic integrated dual-mode amplified feedback laser (AFL) with self-injection, where a robust chaotic signal with RF frequency coverage of above 50 GHz and flatness of ±3.6 dB is generated. By using 4-least significant bits (LSBs) retaining from the 8-bit digitization of the chaotic waveform, random sequences with a bit-rate up to 640 Gbit/s (160 GS/s × 4 bits) are realized. The generated random bits have passed each of the fifteen NIST statistics tests (NIST SP800-22), indicating its randomness for practical applications. PMID:28374860