Single frequency semiconductor lasers

CERN Document Server

Fang, Zujie; Chen, Gaoting; Qu, Ronghui

2017-01-01

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Temperature controller of semiconductor laser

Czech Academy of Sciences Publication Activity Database

Matoušek, Vít; Číp, Ondřej

2003-01-01

Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

International Nuclear Information System (INIS)

Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

2012-01-01

The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Semiconductor laser using multimode interference principle

Science.gov (United States)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Frequency modulation of semiconductor disk laser pulses

Energy Technology Data Exchange (ETDEWEB)

Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

2015-07-31

A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Energy Technology Data Exchange (ETDEWEB)

Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

2007-12-15

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

International Nuclear Information System (INIS)

Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

2007-01-01

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

Semiconductor Laser Multi-Spectral Sensing and Imaging

Directory of Open Access Journals (Sweden)

Han Q. Le

2010-01-01

Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Semiconductor laser multi-spectral sensing and imaging.

Science.gov (United States)

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers

International Nuclear Information System (INIS)

Junges, Leandro; Gallas, Jason A C

2015-01-01

The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang–Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay –time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail. (paper)

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Semiconductor processing with excimer lasers

International Nuclear Information System (INIS)

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Science.gov (United States)

Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

2015-04-01

We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Effect of gain nonlinearity in semiconductor lasers

DEFF Research Database (Denmark)

Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

1988-01-01

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

Modeling bidirectionally coupled single-mode semiconductor lasers

International Nuclear Information System (INIS)

Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

2002-01-01

We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

Science.gov (United States)

Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

2017-01-01

Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (pirrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Science.gov (United States)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

The Modulation Response of a Semiconductor Laser Amplifier

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

1999-01-01

We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

Science.gov (United States)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Laser interferometric method for determining the carrier diffusion length in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

2015-09-15

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

E-beam-pumped semiconductor lasers

Science.gov (United States)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Towards filament free semiconductor lasers

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

2000-01-01

We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser

International Nuclear Information System (INIS)

Horri Ashkan; Mirmoeini Seyedeh Zahra; Faez Rahim

2012-01-01

An equivalent circuit model for the design and analysis of two-section gain lever quantum dot (QD) laser is presented. This model is based on the three level rate equations with two independent carrier populations and a single longitudinal optical mode. By using the presented model, the effect of gain lever on QD laser performances is investigated. The results of simulation show that the main characteristics of laser such as threshold current, transient response, output power and modulation response are affected by differential gain ratios between the two-sections

Hybrid organic semiconductor lasers for bio-molecular sensing.

Science.gov (United States)

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Science.gov (United States)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum.

Science.gov (United States)

Heck, Martijn J R; Bente, Erwin A J M; Smalbrugge, Barry; Oei, Yok-Siang; Smit, Meint K; Anantathanasarn, Sanguan; Nötzel, Richard

2007-12-10

First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Deep-red semiconductor monolithic mode-locked lasers

International Nuclear Information System (INIS)

Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

2014-01-01

A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

The features of modelling semiconductor lasers with a wide contact

Directory of Open Access Journals (Sweden)

Rzhanov Alexey

2017-01-01

Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Ring cavity surface emitting semiconductor lasers

International Nuclear Information System (INIS)

Mujagic, E.

2010-01-01

Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93 �

Reduced filamentation in high power semiconductor lasers

DEFF Research Database (Denmark)

Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

1999-01-01

High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

Semiconductor Laser Tracking Frequency Distance Gauge

Science.gov (United States)

Phillips, James D.; Reasenberg, Robert D.

2009-01-01

Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

Study on guided waves in semiconductor lasers

International Nuclear Information System (INIS)

Pudensi, M.A.A.

1980-01-01

In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Development of semiconductor laser based Doppler lidars for wind-sensing applications

DEFF Research Database (Denmark)

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

2015-01-01

We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

Dynamics of laterally coupled semiconductor lasers: transition to chaos

NARCIS (Netherlands)

Yousefi, M.; Barsella, A.; Lenstra, D.; Lenstra, D.; Morthier, G.; Erneux, T.; Pessa, M.

2004-01-01

A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were

High brightness semiconductor lasers with reduced filamentation

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

1999-01-01

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

Science.gov (United States)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

International Nuclear Information System (INIS)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

2000-01-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

Science.gov (United States)

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Chaos-pass filtering in injection-locked semiconductor lasers

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2005-01-01

Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Return-map for semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

1999-01-01

It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Optical double-locked semiconductor lasers

Science.gov (United States)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Stability of optically injected two-state quantum-dot lasers

Energy Technology Data Exchange (ETDEWEB)

Meinecke, Stefan; Lingnau, Benjamin; Roehm, Andre; Luedge, Kathy [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany)

2017-12-15

Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single-state laser devices, we find a strong suppression of dynamical instabilities in two-state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all-optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Stability of optically injected two-state quantum-dot lasers

International Nuclear Information System (INIS)

Meinecke, Stefan; Lingnau, Benjamin; Roehm, Andre; Luedge, Kathy

2017-01-01

Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single-state laser devices, we find a strong suppression of dynamical instabilities in two-state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all-optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

International Nuclear Information System (INIS)

Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

2010-01-01

An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers

NARCIS (Netherlands)

Röpcke, J.; Welzel, S.; Lang, N.; Hempel, F.; Gatilova, L.; Guaitella, O.; Rousseau, A.; Davies, P.B.

2008-01-01

Within the last decade mid-infrared absorption spectroscopy between 3 and 20 µm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

Review on the dynamics of semiconductor nanowire lasers

Science.gov (United States)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Two-color mid-infrared spectroscopy of optically doped semiconductors

International Nuclear Information System (INIS)

Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

2003-01-01

Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

International Nuclear Information System (INIS)

Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

2013-01-01

We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Nonlinear gain suppression in semiconductor lasers due to carrier heating

International Nuclear Information System (INIS)

Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.

1991-01-01

We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

MBE System for Antimonide Based Semiconductor Lasers

National Research Council Canada - National Science Library

Lester, Luke

1999-01-01

.... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

High Power Mid-IR Semiconductor Lasers for LADAR

National Research Council Canada - National Science Library

Lester, Luke

2003-01-01

The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

Exciton molecule in semiconductors by two-photon absorption

International Nuclear Information System (INIS)

Arya, K.; Hassan, A.R.

1976-07-01

Direct creation of bi-exciton states by two-photon absorption in direct gap semiconductors is investigated theoretically. A numerical application to the case of CuCl shows that the two-photon absorption coefficient for bi-excitonic transitions is larger than that for two-photon interband transitions by three orders of magnitude. It becomes comparable to that for one-photon excitonic transitions for available laser intensities. The main contribution to this enhancement of the absorption coefficient for the transitions to the bi-exciton states is found to be from the resonance effect

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Frequency response control of semiconductor laser by using hybrid modulation scheme.

Science.gov (United States)

Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

2016-10-31

A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

Development of the power control system for semiconductor lasers

International Nuclear Information System (INIS)

Kim, Kwang Suk; Kim, Cheol Jung

1997-12-01

For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers

DEFF Research Database (Denmark)

Dontabactouny, Madhoussoudhana; Rosenberg, C.; Semenova, Elizaveta

2010-01-01

This paper reports the fabrication and the characterisation of a 10 GHz two-section passively mode-locked quantum dash laser emitting at 1.59 μm. The potential of the device's mode-locking is investigated through an analytical model taking into account both the material parameters and the laser...

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

Science.gov (United States)

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Mode structure of delay-coupled semiconductor lasers: influence of the pump current

International Nuclear Information System (INIS)

Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

2005-01-01

We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

International Nuclear Information System (INIS)

Minaev, V P

2005-01-01

High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

On increasing the efficiency of a streamer semiconductor laser

International Nuclear Information System (INIS)

Rusakov, K I; Parashchuk, V V

2007-01-01

The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

Study on biological effect on mice and use safety of 830 nm semiconductor laser

International Nuclear Information System (INIS)

Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang

2006-01-01

Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

2011-01-01

The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

International Nuclear Information System (INIS)

Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

1989-01-01

Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

Research on tunable multiwavelength fiber lasers with two-section birefringence fibers and a nonlinear optical loop

Science.gov (United States)

Chen, Jiao; Tong, Zhengrong; Zhang, Weihua; Xue, Lifang; Pan, Honggang

2018-05-01

Two types of tunable multiwavelength fiber lasers based on two-section polarization maintaining fibers (PMFs) cascaded/in parallel and nonlinear optical loop are proposed and experimentally demonstrated. Two-section cascaded PMFs and two polarization controllers (PCs) form the two-stage Lyot filter, which can generate comb spectrum to achieve multiwavelength output. When two sections of PMFs are in parallel, PCs in two paths are adjusted to change the beam’s polarization to suppress the light of one branch, and then the light of the other branch passes through the cavity. Additionally, a nonlinear optical loop acts as an intensity-dependent component, which can suppress the mode competition to maintain a stable output of multiwavelength lasing. The nonlinear optical loop is made by a 3 dB coupler, a PC3, and a 200 m high nonlinear fiber. Two types of tunable multiwavelength fiber lasers can achieve tuning of the channel space and the number of lasing wavelengths by adjusting PC1 and PC2. The channel space of the multiwavelengh laser can be tuned at nearly 0.4, 0.68, and 0.92 nm. Meanwhile, the spectral range of multiwavelength lasing can be controlled by PC3 in the nonlinear optical loop, and the tuning range of two multiwavelength lasers is about 2.28 and 1.45 nm, respectively.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

A semiconductor laser device

Energy Technology Data Exchange (ETDEWEB)

Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

1984-03-17

A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

Quantum dash based single section mode locked lasers for photonic integrated circuits.

Science.gov (United States)

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

Semiconductor Mode-Locked Lasers for Optical Communication Systems

DEFF Research Database (Denmark)

Yvind, Kresten

2003-01-01

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

Science.gov (United States)

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

CERN Document Server

Yamada, Minoru

2014-01-01

This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

Fast physical random bit generation with chaotic semiconductor lasers

Science.gov (United States)

Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter

2008-12-01

Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

Science.gov (United States)

Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

2017-10-16

Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

DEFF Research Database (Denmark)

Kulkova, Irina

This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

Energy Technology Data Exchange (ETDEWEB)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

Generalized bipolariton model. propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

International Nuclear Information System (INIS)

Igor Beloussov

2013-01-01

A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. (author)

Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

Science.gov (United States)

Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang

2010-07-01

This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

International Nuclear Information System (INIS)

Guang-Hui, Li; An-Bang, Wang; Ye, Feng; Yang, Wang

2010-01-01

This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication. (general)

Melting phenomenon and laser annealing in semiconductors

International Nuclear Information System (INIS)

Narayan, J.

1981-03-01

The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

International Nuclear Information System (INIS)

Zhou, Shengqiang

2015-01-01

Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

Chaotic bursting in semiconductor lasers

Science.gov (United States)

Ruschel, Stefan; Yanchuk, Serhiy

2017-11-01

We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

NARCIS (Netherlands)

Koumans, R.G.M.P.; Roijen, van R.

1996-01-01

We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

Science.gov (United States)

Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

2017-08-03

The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

International Nuclear Information System (INIS)

Eliseev, P G

2012-01-01

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

International Nuclear Information System (INIS)

Rodrigo, Peter John; Lim, May; Saloma, Caesar

2001-01-01

An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

Photonic generation of ultra-wideband signals by direct current modulation on SOA section of an SOA-integrated SGDBR laser.

Science.gov (United States)

Lv, Hui; Yu, Yonglin; Shu, Tan; Huang, Dexiu; Jiang, Shan; Barry, Liam P

2010-03-29

Photonic ultra-wideband (UWB) pulses are generated by direct current modulation of a semiconductor optical amplifier (SOA) section of an SOA-integrated sampled grating distributed Bragg reflector (SGDBR) laser. Modulation responses of the SOA section of the laser are first simulated with a microwave equivalent circuit model. Simulated results show a resonance behavior indicating the possibility to generate UWB signals with complex shapes in the time domain. The UWB pulse generation is then experimentally demonstrated for different selected wavelength channels with an SOA-integrated SGDBR laser.

Mathematical modeling of thermal runaway in semiconductor laser operation

NARCIS (Netherlands)

Smith, W.R.

2000-01-01

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

Multiclustered chimeras in large semiconductor laser arrays with nonlocal interactions

Science.gov (United States)

Shena, J.; Hizanidis, J.; Hövel, P.; Tsironis, G. P.

2017-09-01

The dynamics of a large array of coupled semiconductor lasers is studied numerically for a nonlocal coupling scheme. Our focus is on chimera states, a self-organized spatiotemporal pattern of coexisting coherence and incoherence. In laser systems, such states have been previously found for global and nearest-neighbor coupling, mainly in small networks. The technological advantage of large arrays has motivated us to study a system of 200 nonlocally coupled lasers with respect to the emerging collective dynamics. Moreover, the nonlocal nature of the coupling allows us to obtain robust chimera states with multiple (in)coherent domains. The crucial parameters are the coupling strength, the coupling phase and the range of the nonlocal interaction. We find that multiclustered chimera states exist in a wide region of the parameter space and we provide quantitative characterization for the obtained spatiotemporal patterns. By proposing two different experimental setups for the realization of the nonlocal coupling scheme, we are confident that our results can be confirmed in the laboratory.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

Science.gov (United States)

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Monolithic integration of microfluidic channels and semiconductor lasers

Science.gov (United States)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Optimisation of 1.3 μm strained-layer semiconductor lasers

International Nuclear Information System (INIS)

Pacey, C.

1999-03-01

The objectives of the research undertaken have been to investigate the properties of semiconductor lasers operating at around 1.3 μm. The aim of the investigation is to suggest modifications which give rise to improved operating characteristics especially in the high temperature (approaching 85 deg. C) range. The investigation can be divided into 2 sections: a theoretical approach and an experimental section. The theoretical study examined the performance of compressively strained InGaAsP/InP multiple quantum-well lasers emitting at 1.3 μm. in order to investigate the important factors and trends in the threshold current density and differential gain with strain, well width and well number. Structures with a fixed compressive strain of 1% but variable well width, and also with a fixed well width but variable strain from 0% to 1.4% have been considered. It has been found that there is little benefit to having compressive strains greater than 1%. For structures with a fixed 1% compressive strain and unstrained barriers, an optimum structure for lowest threshold current density and a high differential gain has been found to consist of six 35 A quantum-wells. In addition, compensated strain (CS) structures with compressive wells and tensile barriers have been examined. It is shown that the conduction band offset can be significantly increased and the valence band offset reduced in such structures, to give band-offset ratios comparable with aluminium based 1.3 μm devices. The gain calculations performed suggest that there is little degradation in the threshold carrier density or differential gain due to these alterations in the band offsets; and hence a better laser performance is expected due to a reduction in thermal leakage currents due to the improved electron confinement. The experimental study concentrates on looking at certain key design parameters to investigate their effect on the laser performance. These design parameters range from the number of quantum

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2014-07-28

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

Semiconductor ring lasers coupled by a single waveguide

Science.gov (United States)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Field-glass range finder with a semiconductor laser

Science.gov (United States)

Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan

1995-03-01

This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

Piezoelectric strained layer semiconductor lasers and integrated modulators

International Nuclear Information System (INIS)

Fleischmann, Thomas

2002-01-01

The properties, benefits and limitations of strained InGaAs/GaAs quantum well lasers and modulators grown on (111)B GaAs have been studied. Particular interest in this material system arose from the predicted increase in critical layer thickness, which would facilitate semiconductor lasers emitting beyond 1 μm. However, the recent discovery of a new type of misfit dislocation indicates that the critical layer thickness in this system is closer to that of (001) orientated structures. Photoluminescence and transmission electron microscopy presented in this study support this predicted reduction of the critical layer thickness and the resulting limitations on the emission wavelength. The absence of 3D growth in this system may however be advantageous when high reproducibility and reliable lasing operation beyond 1 μm are required. The piezoelectric field originating from strained growth on substrate orientations other than (001) was studied and its influence on transition energies and absorptive behaviour were investigated. The piezoelectric constant was found to show significant temperature dependence and, as also indicated in earlier studies, its value is smaller then the linearly interpolated value. When the effects of indium segregation on the transition energies is considered, the reduction is significantly smaller. Good agreement between theory and experiment was obtained using 86% of the value linearly interpolated between the binaries at room temperature and 82% at low temperature. Broad area lasers were fabricated emitting at lasing wavelengths of up to 1.08 μm with threshold current densities as low as 80 A/cm 2 at room temperature under continuous wave operation. Increasing the indium composition and strain within the limit of strain relaxation was demonstrated to improve device performance significantly. Furthermore, ridge waveguide lasers were fabricated exhibiting monomode emission at wavelengths up to 1.07 μm with a threshold current of 19 mA at

Development and characterization of a semi-conductor laser sensor for real time measurement and identification of atmospheric pollutants

International Nuclear Information System (INIS)

Boulos, F.; Zaatar, Y.; Atanas, J.P.; Bechara, J.

2004-01-01

Full text.Tunable diode laser absorption spectroscopy (TDLAS) in the near infrared (NIR) using semiconductor lasers of compounds between elements of group III (Ga, Al and In) and group V (P, As and Sb) is being increasingly used in various environmental and industrial process control applications. This technique exploits the unique properties of these laser materials i.e., high coherence, high monochromaticity, low divergence and high brightness to permit rapid sensitive detection with high selectivity and spectral resolution. A computer-interfaced near infrared semiconductor laser sensor has been developed in our laboratory for spectroscopic applications in air pollution monitoring. The sensor can be operated in two configurations: open path free beam coupled to a multiple pass White cell and fiber optic guided beam coupled to an evanescent wave sensor. This paper will present an overview of the system's modulation, sensing and data acquisition methods and some recent measurement results, together with a description of ongoing research and development for the improvement of the system's performance and sensitivity

Field test of an all-semiconductor laser-based coherent continuous-wave Doppler lidar for wind energy applications

DEFF Research Database (Denmark)

Sjöholm, Mikael; Dellwik, Ebba; Hu, Qi

-produced all-semiconductor laser. The instrument is a coherent continuous-wave lidar with two fixed-focus telescopes for launching laser beams in two different directions. The alternation between the telescopes is achieved by a novel switching technique without any moving parts. Here, we report results from...... signal strength from external atmospheric parameters such as relative humidity and concentrations of atmospheric particles is discussed. This novel lidar instrument design seems to offer a promising low-cost alternative for prevision remote sensing of wind turbine inflow....

FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

High-order diffraction gratings for high-power semiconductor lasers

International Nuclear Information System (INIS)

Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

2012-01-01

A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

Science.gov (United States)

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2017-01-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films

International Nuclear Information System (INIS)

Chism, Will; Cartwright, Jason

2012-01-01

Photo-reflectance (PR) measurements provide a non-contact means for the precise characterization of semiconductor electronic properties. In this paper, we investigate the use of a laser beam as the probe beam in the PR setup. In this case it is seen that the nonlinear refraction is responsible for the amplitude change of the reflected probe field, whereas the phase change is due to nonlinear absorption. The open aperture condition may then be used to eliminate the spatial phase at the detector, thereby isolating the electro-refractive contribution to the PR signal. This greatly simplifies the PR analysis and allows absolute measurements of electro-refraction in thin semiconductor films. We report the application of the laser PR technique to characterize physical strain in thin silicon on silicon-germanium films. - Highlights: ► We describe the theory of laser photoreflectance. ► Laser photoreflectance is used to independently characterize nonlinear refraction. ► We report the characterization of strain in thin strained silicon films.

Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

International Nuclear Information System (INIS)

Cotta, E A; Matinaga, F M

2007-01-01

We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

Application of laser spot cutting on spring contact probe for semiconductor package inspection

Science.gov (United States)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

Directory of Open Access Journals (Sweden)

Vincenzo Spagnolo

2009-12-01

Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

Design and construct of a tunable semiconductor laser

Directory of Open Access Journals (Sweden)

J. Sabbaghzadeh

2000-06-01

Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

Science.gov (United States)

Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

2011-01-01

Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

International Nuclear Information System (INIS)

Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

2009-01-01

The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

Directory of Open Access Journals (Sweden)

V.V.Ignatyuk

2004-01-01

Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

Science.gov (United States)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2013-05-01

We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

Optical trapping with Bessel beams generated from semiconductor lasers

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

2014-01-01

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm.

Science.gov (United States)

Heck, Martijn J R; Salumbides, Edcel J; Renault, Amandine; Bente, Erwin A J M; Oei, Yok-Siang; Smit, Meint K; van Veldhoven, René; Nötzel, Richard; Eikema, Kjeld S E; Ubachs, Wim

2009-09-28

For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

International Nuclear Information System (INIS)

Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

2013-01-01

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

Traditional Semiconductors in the Two-Dimensional Limit.

Science.gov (United States)

Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

2018-02-23

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Two-fluid hydrodynamic model for semiconductors

DEFF Research Database (Denmark)

Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

2018-01-01

The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

Science.gov (United States)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

Science.gov (United States)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Memory Effect on Adaptive Decision Making with a Chaotic Semiconductor Laser

Directory of Open Access Journals (Sweden)

Takatomo Mihana

2018-01-01

Full Text Available We investigate the effect of a memory parameter on the performance of adaptive decision making using a tug-of-war method with the chaotic oscillatory dynamics of a semiconductor laser. We experimentally generate chaotic temporal waveforms of the semiconductor laser with optical feedback and apply them for adaptive decision making in solving a multiarmed bandit problem that aims at maximizing the total reward from slot machines whose hit probabilities are dynamically switched. We examine the dependence of making correct decisions on different values of the memory parameter. The degree of adaptivity is found to be enhanced with a smaller memory parameter, whereas the degree of convergence to the correct decision is higher for a larger memory parameter. The relations among the adaptivity, environmental changes, and the difficulties of the problem are also discussed considering the requirement of past decisions. This examination of ultrafast adaptive decision making highlights the importance of memorizing past events and paves the way for future photonic intelligence.

Comparative study of the performance of semiconductor laser based coherent Doppler lidars

DEFF Research Database (Denmark)

Rodrigo, Peter John; Pedersen, Christian

2012-01-01

Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

International Nuclear Information System (INIS)

Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

2005-01-01

Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

OpenAIRE

Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

2004-01-01

We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

International Nuclear Information System (INIS)

Zhao Yiguang

1991-01-01

The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Science.gov (United States)

Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

2010-02-01

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

DEFF Research Database (Denmark)

Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.

2009-01-01

We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper

2004-01-01

The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

Transient thermal analysis of semiconductor diode lasers under pulsed operation

Science.gov (United States)

Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

2017-02-01

Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation.

Science.gov (United States)

Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

2016-07-14

Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

Science.gov (United States)

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper; Kroh, Marcel

2004-01-01

We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

1999-01-01

We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

NARCIS (Netherlands)

Yabre, G.S.

1998-01-01

In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

Dynamics of InGaN tandem blue-violet semiconductor lasers

International Nuclear Information System (INIS)

Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

2013-01-01

Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

Science.gov (United States)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

International Nuclear Information System (INIS)

Smetanin, Igor V; Vasil'ev, Petr P

2009-01-01

Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

Science.gov (United States)

He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

2017-12-01

This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

Institute of Scientific and Technical Information of China (English)

Min Zhao; Chang-Ye Sang; Zhen-Jun Wang; Yan-Chun Xu

2016-01-01

Objective:To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery.Methods:A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded.Results:The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05). The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05). The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05). The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05). The average healing time in the treatment group was significantly faster than that in the control group (P<0.05). Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

Directory of Open Access Journals (Sweden)

Min Zhao

2016-06-01

Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

NARCIS (Netherlands)

Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

2002-01-01

We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

Cross-sectional transmission electron microscopy of semiconductors

International Nuclear Information System (INIS)

Sadana, D.K.

1982-10-01

A method to prepare cross-sectional (X) semiconductor specimens for transmission electron microscopy (TEM) has been described. The power and utility of XTEM has been demonstrated. It has been shown that accuracy and interpretation of indirect structural-defects profiling techniques, namely, MeV He + channeling and secondary ion mass spectrometry (SIMS) can be greatly enhanced by comparing their results with those obtained by XTEM from the same set of samples

The transformation of optical bistability effect and of generated pulses in operation of a DFB laser with two sections

International Nuclear Information System (INIS)

Nguyen Van Phu; Dinh Van Hoang

2005-01-01

In this paper is presented the transformation of characteristics of optical bistability effect and of generated pulses in operation of a DFB laser with two sections. By solving the rate equations describing the operation of this laser the appearance of optical bistability effect in stationary regime and of short pulses in transient regime is obtained. With the variation of dynamical laser parameter we can evaluate the transformation indicated above. The method of examination used here is simple for determining the influence of any dynamical laser parameter on characteristics of optical bistability effect and generated pulses. (author)

Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

Directory of Open Access Journals (Sweden)

L. Li

2012-12-01

Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

DEFF Research Database (Denmark)

2009-01-01

The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

Science.gov (United States)

Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

2018-02-01

We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

DEFF Research Database (Denmark)

Danielsen, Magnus

1976-01-01

Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

The astigmatism factor for semiconductor injection lasers

International Nuclear Information System (INIS)

Zhao Yiguang; Guo Changzhi

1988-03-01

The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

An electrically injected rolled-up semiconductor tube laser

Energy Technology Data Exchange (ETDEWEB)

Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

2015-01-12

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

DEFF Research Database (Denmark)

Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal

2009-01-01

A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser......, the generated signals with complex shape in time domain match the Federal Communications Commission (FCC) mask in the frequency domain. Experimental results using a DML agree well with simulation predictions. Furthermore, we also experimentally demonstrate the generation of FCC compliant UWB signals...

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

Science.gov (United States)

Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

2018-02-01

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

Modeling and experimental verification of laser self-mixing interference phenomenon with the structure of two-external-cavity feedback

Science.gov (United States)

Chen, Peng; Liu, Yuwei; Gao, Bingkun; Jiang, Chunlei

2018-03-01

A semiconductor laser employed with two-external-cavity feedback structure for laser self-mixing interference (SMI) phenomenon is investigated and analyzed. The SMI model with two directions based on F-P cavity is deduced, and numerical simulation and experimental verification were conducted. Experimental results show that the SMI with the structure of two-external-cavity feedback under weak light feedback is similar to the sum of two SMIs.

The dynamical complexity of optically injected semiconductor lasers

International Nuclear Information System (INIS)

Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

2005-01-01

This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

Ultra-fast relaxation kinetics in semiconductors

International Nuclear Information System (INIS)

Luzzi, R.

1983-01-01

It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response funtion theory in systems far-from-equilibrium are reviewed in Section II. In Section III we present some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered. In last section we present a brief summary of the different aspects of the subject. (author) [pt

Ultra-fast relaxation kinetics in semiconductors

International Nuclear Information System (INIS)

Luzzi, R.

1983-01-01

It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response function theory in systems far-from-equilibrium are reviewed in Section II. In Section III some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered are presented. In last Section a brief summary of the different aspects of the subject is also presented. (Author) [pt

Ultrawideband pulse generation based on overshooting effect in gain-switched semiconductor laser

DEFF Research Database (Denmark)

Torres-Company, V.; Prince, Kamau; Tafur Monroy, Idelfonso

2008-01-01

We demonstrate an alternative procedure to achieve ultrawideband (UWB) radio-frequency (RF) doublet impulses. It is based on the overshooting effect appearing by biasing a semiconductor laser close to the threshold with a large-amplitude signal. Specifically, with an optical bandpass filter...... a reliable, easy, and low-cost alternative for RF UWB impulse generation....

Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells

International Nuclear Information System (INIS)

Hayat, Alex; Nevet, Amir; Orenstein, Meir

2009-01-01

We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.

Design and evaluation of modelocked semiconductor lasers for low noise and high stability

DEFF Research Database (Denmark)

Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

2005-01-01

We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm

NARCIS (Netherlands)

Heck, M.J.R.; Salumbides, E.J.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Veldhoven, van P.J.; Nötzel, R.; Eikema, K.S.E.; Ubachs, W.

2009-01-01

For the first time a detailed study of hybrid mode-locking in two- section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase

Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

Science.gov (United States)

Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

2015-02-01

Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

Fiber optical laser spot microscope: A new concept for photoelectrochemical characterization of semiconductor electrodes

OpenAIRE

Carlsson, Per; Holmström, Bertil; Uosaki, Kohei; Kita, Hideaki

1988-01-01

A fiber optical laser spot microscope, which allows the simultaneous measurements of photocurrent and reflected light intensity or the measurement of laser spot photocurrent under the illumination of other light sources, has been developed to study semiconductor/electrolyte interfaces. The capability of this microscope was demonstrated on as-cleaved and Pt-treated p-InSe. The Pt treatment increased the photocurrent and improved the lateral resolution due to the increase of surface reaction ra...

Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

International Nuclear Information System (INIS)

Abrarov, S.M.

1999-01-01

In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

Multistabilities and symmetry-broken one-color and two-color states in closely coupled single-mode lasers.

Science.gov (United States)

Clerkin, Eoin; O'Brien, Stephen; Amann, Andreas

2014-03-01

We theoretically investigate the dynamics of two mutually coupled, identical single-mode semi-conductor lasers. For small separation and large coupling between the lasers, symmetry-broken one-color states are shown to be stable. In this case the light outputs of the lasers have significantly different intensities while at the same time the lasers are locked to a single common frequency. For intermediate coupling we observe stable symmetry-broken two-color states, where both lasers lase simultaneously at two optical frequencies which are separated by up to 150 GHz. Using a five-dimensional model, we identify the bifurcation structure which is responsible for the appearance of symmetric and symmetry-broken one-color and two-color states. Several of these states give rise to multistabilities and therefore allow for the design of all-optical memory elements on the basis of two coupled single-mode lasers. The switching performance of selected designs of optical memory elements is studied numerically.

Advanced excimer laser technologies enable green semiconductor manufacturing

Science.gov (United States)

Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

2014-03-01

"Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid

Energy Technology Data Exchange (ETDEWEB)

Sun, Ren-De, E-mail: son003@sekisui.com [Research & Development Institute, High Performance Plastics Company, Sekisui Chemical Co., Ltd. 2-1 Hyakuyama, Shimamoto-Cho, Mishima-Gun, Osaka, 618-0021 (Japan); Tsuji, Takeshi [Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-Cho, Matsue, 690-8504 (Japan)

2015-09-01

Highlights: • Pulsed laser ablation in liquid (LAL) was applied to prepare antimony sulfide nanoparticles (Sb{sub 2}S{sub 3} NPs). • Sb{sub 2}S{sub 3} NPs with a stoichiometric composition were successfully prepared by LAL in water without using any surfactants or capping agents. • Thus-prepared Sb{sub 2}S{sub 3} NPs showed low-temperature crystallization and melting at a temperature low as 200 °C. • The NPs-coated Sb{sub 2}S{sub 3} thin film showed comparable semiconductor properties (carrier mobility and carrier density) to the vacuum deposited one. • Byproducts such as CS{sub 2}, CH{sub 4} and CO were detected by GC-MS analysis when LAL was performed in organic solvent. • The LAL-induced decomposition mechanism of Sb{sub 2}S{sub 3} and organic solvents was discussed based on the GC-MS results. - Abstract: In this paper, we report on the synthesis of antimony sulfide (Sb{sub 2}S{sub 3}) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb{sub 2}S{sub 3} nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb{sub 2}S{sub 3} nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb{sub 2}S{sub 3} thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS{sub 2}, CO and CH{sub 4} were detected from the reaction system by GC-MS analysis, which suggests that both Sb{sub 2}S{sub 3} and organic

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI Mass Spectrometric Approaches to Proteome Analysis

Directory of Open Access Journals (Sweden)

Suresh Kumar Kailasa

2013-12-01

Full Text Available Semiconductor quantum dots (QDs or nanoparticles (NPs exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis.

Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

DEFF Research Database (Denmark)

Langley, L.N.; Elkin, M.D.; Edege, C.

1999-01-01

In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

DEFF Research Database (Denmark)

Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

2016-01-01

name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

1988-01-01

Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

Directory of Open Access Journals (Sweden)

Kevin Schires

2011-09-01

Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers

Science.gov (United States)

Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira

2010-03-01

We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

International Nuclear Information System (INIS)

Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.; Rosso, O. A.

2010-01-01

Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

Science.gov (United States)

Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

2018-01-01

The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley - Read - Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

Science.gov (United States)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Advances in semiconductor lasers

CERN Document Server

Coleman, James J; Jagadish, Chennupati

2012-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

Energy Technology Data Exchange (ETDEWEB)

Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

International Nuclear Information System (INIS)

Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

1992-07-01

The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

Energy Technology Data Exchange (ETDEWEB)

Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

2016-06-15

We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

Porous plasmonic nanocomposites for SERS substrates fabricated by two-step laser method

Energy Technology Data Exchange (ETDEWEB)

Koleva, M.E., E-mail: mihaela_ek@yahoo.com [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee blvd., Sofia 1784 (Bulgaria); International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 (Japan); Nedyalkov, N.N.; Atanasov, P.A. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee blvd., Sofia 1784 (Bulgaria); Gerlach, J.W.; Hirsch, D.; Prager, A.; Rauschenbach, B. [Leibniz Institute of Surface Modification (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany); Fukata, N.; Jevasuwan, W. [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 (Japan)

2016-04-25

This research is focused on investigation of coupled plasmonic/metal-semiconductor nanomaterials. A two-step laser-assisted method is demonstrated for formation of plasmonic Ag nanoparticles (NPs) distributed into porous metal–oxide semiconductors. The mosaic Ag-ZnO target is used for laser ablation and, subsequently, laser annealing of the deposited layer is applied. The plasmon resonance properties of the nanostructures produced are confirmed by optical transmission spectroscopy. The wurtzite structure of ZnO is formed with tilted c-axis orientation and, respectively, a mixed Raman mode appears at 580 cm{sup −1}. The oxygen pressure applied during a deposition process has impact on the morphology and thickness of the porous nanostructures, but not on the size and size distribution of AgNPs. The porous nanocomposites exhibited potential for SERS applications, most pronounced for the oxygen deficient sample, grown at lower oxygen pressure. The observed considerable SERS enhancement of R6G molecules on AgNP/ZnO can be attributed to the ZnO-to-molecule charge transfer contribution, enhanced by the additional electrons from the local surface plasmon resonance (LSPR) of AgNPs to the ZnO through the conduction band. - Highlights: • Porous AgNPs/ZnO composites are obtained by laser deposition and laser annealing. • Morphology and properties depend on growth oxygen pressure. • The emergence of mixed-symmetry Raman mode at 580 cm{sup −1} is registered. • The AgNPs/ZnO porous nanocomposites are suitable for SERS-active substrates. • The charge transfer enhanced by LSPR has a contribution to SERS effect.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

Science.gov (United States)

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

DEFF Research Database (Denmark)

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

2013-01-01

material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

A compact chaotic laser device with a two-dimensional external cavity structure

International Nuclear Information System (INIS)

Sunada, Satoshi; Adachi, Masaaki; Fukushima, Takehiro; Shinohara, Susumu; Arai, Kenichi; Harayama, Takahisa

2014-01-01

We propose a compact chaotic laser device, which consists of a semiconductor laser and a two-dimensional (2D) external cavity for delayed optical feedback. The overall size of the device is within 230 μm × 1 mm. A long time delay sufficient for chaos generation can be achieved with the small area by the multiple reflections at the 2D cavity boundary, and the feedback strength is controlled by the injection current to the external cavity. We experimentally demonstrate that a variety of output properties, including chaotic output, can be selectively generated by controlling the injection current to the external cavity.

Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

Science.gov (United States)

Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

1991-04-01

The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

International Nuclear Information System (INIS)

Tronciu, V Z; Mirasso, Claudio R; Colet, Pere

2008-01-01

We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed

Field performance of an all-semiconductor laser coherent Doppler lidar

DEFF Research Database (Denmark)

Rodrigo, Peter John; Pedersen, Christian

2012-01-01

We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper

2006-01-01

We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

Wake fields in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1994-05-01

It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

Science.gov (United States)

Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

2018-01-01

We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

Pulsed laser deposition of II-VI and III-V semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

1998-12-01

Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

Two-wave mixing in a broad-area semiconductor amplifier

DEFF Research Database (Denmark)

Chi, M.; Jensen, S.B.; Huignard, J.P.

2006-01-01

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

Physics of frequency-modulated comb generation in quantum-well diode lasers

Science.gov (United States)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

DEFF Research Database (Denmark)

Champagne, A.; Lestrade, Michel; Camel, Jérôme

2004-01-01

The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Direct profiling of III/V semiconductor nanostructures at the atomic level by cross-sectional scanning tunneling microscopy

NARCIS (Netherlands)

Bruls, D.M.

2003-01-01

By means of modern epitaxial growth techniques it is possible to fabricate semiconductor structures that are faster, cheaper and more complicated. They find their implementation in e.g. quantum dot or quantum well lasers. To obtain extra functionality, these devices have to be made so small, that

Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

International Nuclear Information System (INIS)

Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

2004-01-01

Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

Energy Technology Data Exchange (ETDEWEB)

Yurkin, A A [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2016-03-31

We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

Two dimensional tunable photonic crystals and n doped semiconductor materials

International Nuclear Information System (INIS)

Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

2015-01-01

In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

International Nuclear Information System (INIS)

Heil, T.; Uchida, A.; Davis, P.; Aida, T.

2003-01-01

We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

International Nuclear Information System (INIS)

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

2010-01-01

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

Energy Technology Data Exchange (ETDEWEB)

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

2010-02-15

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

Directory of Open Access Journals (Sweden)

R. Alexandrescu

2008-01-01

Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

Determination of the absolute two-photon ionization cross section of He by an XUV free electron laser

International Nuclear Information System (INIS)

Sato, Takahiro; Iwasaki, Atsushi; Ishibashi, Kazuki; Okino, Tomoya; Yamanouchi, Kaoru; Adachi, Junichi; Yagishita, Akira; Yazawa, Hiroki; Aoyma, Makoto; Yabashi, Makina; Nagasono, Mitsuru; Higashiya, Atsushi; Ishikawa, Tetsuya; Kannari, Fumihiko; Yamakawa, Koichi; Midorikawa, Katsumi; Nakano, Hidetoshi

2011-01-01

The resonant and non-resonant two-photon single ionization processes of He were investigated using intense free electron laser light in the extreme ultraviolet (XUV) region (53.4-61.4 nm) covering the 1s-2p and 1s-3p resonant transitions of He. On the basis of the dependences of the yield of He + on the XUV light-field intensity at 53.4, 58.4, 56.0 and 61.4 nm, the absolute values of the two-photon ionization cross sections of He at the four different wavelengths and their dependence on the light-field intensity were determined for the first time. (fast track communication)

Preparation of ZnS semiconductor nanocrystals using pulsed laser ablation in aqueous surfactant solutions

International Nuclear Information System (INIS)

Choi, S-H; Sasaki, T; Shimizu, Y; Yoon, J-W; Nichols, W T; Sung, Y-E; Koshizaki, N

2007-01-01

Cubic ZnS semiconductor nanocrystals with the size of 2 to 5 nm were prepared by pulsed laser ablation in aqueous surfactant solutions of sodium dodecyl sulfate and cetyltrimethylammonium bromide without any further treatments. The obtained suspensions of the nanocrystals have broad photoluminescence emission from 375 to 600 nm. The abundance and emission intensity of the nanocrystals depend on the concentration of the surfactant in solution

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Science.gov (United States)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

Science.gov (United States)

Zeng, Linfei

This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

International Nuclear Information System (INIS)

McWilliams, B.M.; Herman, I.P.; Mitlitsky, F.; Hyde, R.A.; Wood, L.L.

1983-01-01

A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-μm and 1-μm-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously

Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

Institute of Scientific and Technical Information of China (English)

Xu Zhang; Huiying Ye; Zhaoxin Song

2008-01-01

Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Directory of Open Access Journals (Sweden)

Andreas Schmitt-Sody

2008-01-01

Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Measurements of excited-state-to-excited-state transition probabilities and photoionization cross-sections using laser-induced fluorescence and photoionization signals

International Nuclear Information System (INIS)

Shah, M.L.; Sahoo, A.C.; Pulhani, A.K.; Gupta, G.P.; Dikshit, B.; Bhatia, M.S.; Suri, B.M.

2014-01-01

Laser-induced photoionization and fluorescence signals were simultaneously observed in atomic samarium using Nd:YAG-pumped dye lasers. Two-color, three-photon photoionization and two-color fluorescence signals were recorded simultaneously as a function of the second-step laser power for two photoionization pathways. The density matrix formalism has been employed to analyze these signals. Two-color laser-induced fluorescence signal depends on the laser powers used for the first and second-step transitions as well as the first and second-step transition probability whereas two-color, three-photon photoionization signal depends on the third-step transition cross-section at the second-step laser wavelength along with the laser powers and transition probability for the first and second-step transitions. Two-color laser-induced fluorescence was used to measure the second-step transition probability. The second-step transition probability obtained was used to infer the photoionization cross-section. Thus, the methodology combining two-color, three-photon photoionization and two-color fluorescence signals in a single experiment has been established for the first time to measure the second-step transition probability as well as the photoionization cross-section. - Highlights: • Laser-induced photoionization and fluorescence signals have been simultaneously observed. • The density matrix formalism has been employed to analyze these signals. • Two-color laser-induced fluorescence was used to measure the second-step transition probability. • The second-step transition probability obtained was used to infer the photoionization cross-section. • Transition probability and photoionization cross-section have been measured in a single experiment

New semiconductor laser technology for gas sensing applications in the 1650nm range

Science.gov (United States)

Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

2017-08-01

Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

2002-01-01

The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

Energy Technology Data Exchange (ETDEWEB)

Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

2002-02-01

The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

International Nuclear Information System (INIS)

Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

2002-01-01

The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

Science.gov (United States)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

Directory of Open Access Journals (Sweden)

Sanjun Zhang

2010-05-01

Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

Synchronous characterization of semiconductor microcavity laser beam.

Science.gov (United States)

Wang, T; Lippi, G L

2015-06-01

We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

Directory of Open Access Journals (Sweden)

Remzi YILDIRIM

1998-01-01

Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

Two-dimensional Semiconductor-Superconductor Hybrids

DEFF Research Database (Denmark)

Suominen, Henri Juhani

This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled-cavity semiconductor laser

OpenAIRE

Vahala, Kerry; Paslaski, Joel; Yariv, Amnon

1985-01-01

Simultaneous direct modulation response enhancement, phase noise (linewidth) reduction, and frequency modulation suppression are produced in a coupled-cavity semiconductor laser by the detuned loading mechanism.

Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

Science.gov (United States)

Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

2018-05-01

The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

Science.gov (United States)

Kono, J.; Chin, A. H.

2000-03-01

Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

Analysis of a wavelength selectable cascaded DFB laser based on the transfer matrix method

International Nuclear Information System (INIS)

Xie Hongyun; Chen Liang; Shen Pei; Sun Botao; Wang Renqing; Xiao Ying; You Yunxia; Zhang Wanrong

2010-01-01

A novel cascaded DFB laser, which consists of two serial gratings to provide selectable wavelengths, is presented and analyzed by the transfer matrix method. In this method, efficient facet reflectivity is derived from the transfer matrix built for each serial section and is then used to simulate the performance of the novel cascaded DFB laser through self-consistently solving the gain equation, the coupled wave equation and the current continuity equations. The simulations prove the feasibility of this kind of wavelength selectable laser and a corresponding designed device with two selectable wavelengths of 1.51 μm and 1.53 μm is realized by experiments on InP-based multiple quantum well structure. (semiconductor devices)

The dynamics of the laser-induced metal-semiconductor phase transition of samarium sulfide (SmS)

International Nuclear Information System (INIS)

Kaempfer, Tino

2009-01-01

The present thesis is dedicated to the experimental study of the metal-semiconductor phase transition of samarium sulfide (SmS): Temperature- and time-resolved experiments on the characterization of the phase transition of mixed-valence SmS samples (M-SmS) are presented. The measurement of the dynamics of the laser-induced phase transition pursues via time-resolved ultrashort-time microscopy and by X-ray diffraction with sub-picosecond time resolution. The electronic and structural processes, which follow an excitation of M-SmS with infrared femtosecond laser pulses, are physically interpreted on the base of the results obtained in this thesis and model imaginations. [de

Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

Science.gov (United States)

Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

2014-07-01

Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

DEFF Research Database (Denmark)

Kulkova, Irina; Larsson, David; Semenova, Elizaveta

2012-01-01

We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.......We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated....

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

Science.gov (United States)

Horn, Kevin M [Albuquerque, NM

2008-05-20

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

Controllable laser thermal cleavage of sapphire wafers

Science.gov (United States)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

Science.gov (United States)

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Strong Exciton-photon Coupling in Semiconductor Microcavities

DEFF Research Database (Denmark)

Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

1999-01-01

The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

Semiconductor micro cavities: half light, half matter

International Nuclear Information System (INIS)

Baumberg, Jeremy J.

2003-01-01

Quantum wells sandwiched tightly between two mirrors can be used to make a new type of laser that can amplify light more than any other known material. What do you get if you cross light with matter? It is a question that fascinates today's researchers in quantum optoelectronics, who want to see how far the physical states of the world can be intertwined. Although we have a good understanding of the quantum ingredients of optics and solids - photons and atoms - it turns out that assembling these building blocks in deliberately unfamiliar ways can lead to what is new and often quite unexpected behaviour. Consider 'quantum wells', which form the basis of modern semiconductor lasers. First developed in the 1980s, they lie at the heart of optical-communication and optical-storage technologies such as DVD players and they now have a global market of over 10bn British Pounds. Quantum wells consist of a thin sheet of crystalline semiconductor sandwiched between two sheets of another semiconductor. The outer layers squash the wavefunctions of electrons within the central sheet, increasing the electrons' energy and their interaction with light. Engineers can control the colour of the light emitted by the laser simply by adjusting the energy levels within the central sheet, which acts as a potential well. But this bug-sized playground for electrons has not just had technological ramifications. It has also spawned an enormous variety of new physics, including the quantum Hall effect, which can be used as a fundamental standard for measuring the ratio between the charge on the electron and the Planck constant. Over the last ten years researchers have also become increasingly keen to incorporate quantum wells into what are known as 'semiconductor micro cavities'. Physicists have found that these painstakingly layered materials can be used to create new quantum states that resemble superfluids and can be used in interferometric quantum devices. In the March issue of Physics

Crisis route to chaos in semiconductor lasers subjected to external optical feedback

Science.gov (United States)

Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

2018-03-01

Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

Teradiode's high brightness semiconductor lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

Science.gov (United States)

Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

2017-11-01

Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

Science.gov (United States)

Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

2017-08-01

Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

Influence of laser frequency noise on scanning Fabry-Perot interferometer based laser Doppler velocimetry

DEFF Research Database (Denmark)

Rodrigo, Peter John; Pedersen, Christian

2014-01-01

n this work, we study the performance of a scanning Fabry-Perot interferometer based laser Doppler velocimeter (sFPILDV) and compare two candidate 1.5 um single-frequency laser sources for the system – a fiber laser (FL) and a semiconductor laser (SL). We describe a straightforward calibration...... procedure for the sFPI-LDV and investigate the effect of different degrees of laser frequency noise between the FL and the SL on the velocimeter’s performance...

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

International Nuclear Information System (INIS)

Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

1994-01-01

The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

Science.gov (United States)

Link, S M; Maas, D J H C; Waldburger, D; Keller, U

2017-06-16

Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

Key Topics in Producing New Ultraviolet Led and Laser Devices Based on Transparent Semiconductor Zinc Oxide

International Nuclear Information System (INIS)

Tuezemen, S.

2004-01-01

Recently, it has been introduced that ZnO as II-VI semiconductor is promising various technological applications, especially for optoelectronic short wavelength light emitting devices due to its wide and direct band gap profile. The most important advantage of ZnO over the other currently used wide band gap semiconductors such as GaN is that its nearly 3 times higher exciton binding energy (60 meV), which permits efficient excitonic emission at room temperature and above. As-grown ZnO is normally n-type because of the Zn-rich defects such as zinc interstitials (Zn i ) oxygen vacancies (Vo), natively acting as shallow donors and main source of n-type conductivity in as-grown material. Therefore, making p-type ZnO has been more difficult due to unintentional compensation of possible acceptors by these residual donors. In order to develop electro luminescent and laser devices based on the ultraviolet (UV) exciton emission of ZnO, it will be important to fabricate good p-n junctions. Attempts to observe p-type conductivity in ours and our collaborators' laboratories in USA, either by co-doping with N or tuning O pressure have been first successful achievements, resulting in hole concentrations up to 10 1 9 cm - 3 in reactively sputtered thin layers of ZnO. Moreover, in order to produce ZnO based quantum well lasers similar to the previously introduced n-AlGaAs/GaAs/p-AlGaAs structures; we have attempted to grow Zn 1 -xSn x O thin films to enlarge the band gap energy. An increase up to 170 meV has been observed in Zn 1 -xSn x O thin films and this is enough barrier to be able to trap electron-hole pairs in quantum well structures. As a result, two important key issues; p-type conductivity and enhancement of the band gap energy in order to step forward towards the production of electro luminescent UV LEDs and quantum well lasers have been investigated and will be presented in this study

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

Energy Technology Data Exchange (ETDEWEB)

Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

1998-01-01

In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

Dissipative Structures At Laser-Solid Interactions

Science.gov (United States)

Nanai, Laszlo

1989-05-01

The questions which are discussed in this lecture refer to one of sections of laser-solid interactions, namely: to formation of different dissipative structures on the surface of metals and semiconductors when they are irradiated by intensive laser light in chemically active media (f.e.air). Some particular examples of the development at different spatial and time instabilities, periodic and stochastic structures, auto-wave processes are present-ed using testing materials vanadium metal and semiconducting V205 single crystals and light sources: cw and pulsed CO2 and YAG lasers.

Photobiostimulation effects on germination and early growth of wheat seeds (Triticum aestivum L) produced by a semiconductor laser with λ=980nm

International Nuclear Information System (INIS)

Michtchenko, A.; Hernandez, M.

2009-01-01

The effect of the exposure of wheat (Triticum aestivum L) seeds to a IR laser radiation with λ=980nm produced by a semiconductor laser on germination and early growth had been studied under laboratory conditions. Seeds were irradiated to one of two laser intensities 15 mWcm - ''2 or 30 mWcm -2 for different periods of time 30, 60 or 120 s. Seeds exposed to a light intensity of 15mWcm -2 and an exposition time of 30 s. showed an increase on the percentage of seeds germinated normally while the percentage of seeds germinated abnormally decreased. At the same time there is a stimulation effect on the growth of the stem and on the growth of the root of 10% on wheat seedlings over control seedlings. Significant differences (ρ < 0.001) were observed between the control and the above treatment. (Author)

Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

Energy Technology Data Exchange (ETDEWEB)

Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)

2011-04-01

Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

Asymmetrically excited semiconductor injection laser

International Nuclear Information System (INIS)

Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.

1975-01-01

A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

Directory of Open Access Journals (Sweden)

M. Seifouri

2013-10-01

Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

Two-Dimensional Charge Transport in Disordered Organic Semiconductors

NARCIS (Netherlands)

Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

2012-01-01

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas

Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring

International Nuclear Information System (INIS)

Bhattacharyya, S; Das, N R

2012-01-01

In this paper, we study the oscillator strength and cross-section for intersubband optical transition in an n-type semiconductor quantum ring of cylindrical symmetry in the presence of an electric field perpendicular to the plane of the ring. The analysis is done considering Kane-type band non-parabolicity of the semiconductor and assuming that the polarization of the incident radiation is along the axis of the ring. The results show that the oscillator strength decreases and the transition energy increases with the electric field. The assumption of a parabolic band leads to an overestimation of the oscillator strength. The effects of the electric field, band non-parabolicity and relaxation time on absorption cross-section for intersubband transition in a semiconductor quantum ring are also shown. (paper)

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

Science.gov (United States)

Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

2013-12-01

We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

A microprocessor based on a two-dimensional semiconductor

Science.gov (United States)

Wachter, Stefan; Polyushkin, Dmitry K.; Bethge, Ole; Mueller, Thomas

2017-04-01

The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor--molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

Two-frequency operation of a hybrid TEA CO2 laser and its application to two-frequency pulse injection locking

International Nuclear Information System (INIS)

Sasaki, Koichi; Ohno, Hirotaka; Fujii, Takaharu; Tsukishima, Takashige.

1990-10-01

Simultaneous two-frequency oscillation of a hybrid TEA CO 2 laser is exhibited when the cw section is operated in a 'below threshold' state. The output of the hybrid laser thus obtained is injected into a main TEA CO 2 laser to obtain a power-modulated, long-pulse output with a well suppressed gain-switched spike. (author)

Laser applications in materials processing

International Nuclear Information System (INIS)

Ready, J.F.

1980-01-01

The seminar focused on laser annealing of semiconductors, laser processing of semiconductor devices and formation of coatings and powders, surface modification with lasers, and specialized laser processing methods. Papers were presented on the theoretical analysis of thermal and mass transport during laser annealing, applications of scanning continuous-wave and pulsed lasers in silicon technology, laser techniques in photovoltaic applications, and the synthesis of ceramic powders from laser-heated gas-phase reactants. Other papers included: reflectance changes of metals during laser irradiation, surface-alloying using high-power continuous lasers, laser growth of silicon ribbon, and commercial laser-shock processes

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Combining ESPI with laser scanning for 3D characterization of racing tyres sections

Science.gov (United States)

Pagliarulo, Vito; Farroni, Flavio; Ferraro, Pietro; Lanzotti, Antonio; Martorelli, Massimo; Memmolo, Pasquale; Speranza, Domenico; Timpone, Francesco

2018-05-01

In this work is exploited the possibility to use two optical techniques and combining their measurements for the 3D characterization of different tyres with particular attention to the tyre's section. Electronic Speckle Pattern Interferometry (ESPI) and Laser Scanner (LS) based on principle of triangulation have been employed for investigating and studying the tyre's section and 3D shape respectively. As case studies two different racing tyres, Michelin S9H and Pirelli Diablo respectively, have been considered. The investigation has been focused at the aim to evaluate and measure the section's components in order to add to the 3D model obtained by Laser Scanning accurate information about the different layers along through the tyres sections. It is important to note that the assessment about the different layers along the section is a very difficult task to obtain by visual inspection or classical microscopy and even with the LS. Here we demonstrate that the different layers can be easily highlighted and identified by mean of the ESPI.

The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

DEFF Research Database (Denmark)

Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

2003-01-01

The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

Effects of target shape and reflection on laser radar cross sections.

Science.gov (United States)

Steinvall, O

2000-08-20

Laser radar cross sections have been evaluated for a number of ideal targets such as cones, spheres, paraboloids, and cylinders by use of different reflection characteristics. The time-independent cross section is the ratio of the cross section of one of these forms to that of a plate with the same maximum radius. The time-dependent laser radar cross section involves the impulse response from the object shape multiplied by the beam's transverse profile and the surface bidirectional reflection distribution function. It can be clearly seen that knowledge of the combined effect of object shape and reflection characteristics is important for determining the shape and the magnitude of the laser radar return. The results of this study are of interest for many laser radar applications such as ranging, three-dimensional imaging-modeling, tracking, antisensor lasers, and target recognition.

The history of laser conditions in semiconductors

International Nuclear Information System (INIS)

Bernard, Maurice

2012-01-01

Fifty years ago, summer 1962: in three independent laboratories of the US East Coast, almost simultaneously, IR coherent light was for the first time emitted from semiconductor crystals. No theory was associated with these results. Two years before, Georges Duraffourg and Maurice Bernard had readily proved that for such phenomenon to occur requires that a relation is fulfilled between quasi-Fermi levels and photon energy: F n − F p > hν. This paper presents an overview of this important period of history and the events that occurred around that time. (paper)

Calculation of neutron-induced single-event upset cross sections for semiconductor memory devices

International Nuclear Information System (INIS)

Ikeuchi, Taketo; Watanabe, Yukinobu; Nakashima, Hideki; Sun, Weili

2001-01-01

Neutron-induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using LA150 data and QMD calculation in the neutron energy range between 20 MeV and 10 GeV. The calculated results are compared with the measured SEU cross sections for energies up to 160 MeV, and the validity of the calculation method and the nuclear data used is verified. The kind of reaction products and the neutron energy range that have the most effect on SEU are discussed. (author)

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

Science.gov (United States)

Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

Energy Technology Data Exchange (ETDEWEB)

Cronin-Golomb; Yariv

1986-07-01

A GaA1As semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. Also reported similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

Energy Technology Data Exchange (ETDEWEB)

Cronin-Golomb, M.; Yariv, A.

1986-07-01

A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

Self-induced frequency scanning and distributed bragg reflection in semiconductor lasers with phase-conjugate feedback

Science.gov (United States)

Cronin-Golomb, Mark; Yariv, Amnon

1986-07-01

A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

Science.gov (United States)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Time-resolved photoluminescence spectroscopy of semiconductors for optical applications beyond the visible spectral range

Energy Technology Data Exchange (ETDEWEB)

Chernikov, Alexey A.

2011-07-01

The work discussed in this thesis is focused on the experimental studies regarding these three steps: (1) investigation of the fundamental effects, (2) characterization of new material systems, and (3) optimization of the semiconductor devices. In all three cases, the experimental technique of choice is photoluminescence (PL) spectroscopy. The thesis is organized as follows. Chapter 2 gives a summary of the PL properties of semiconductors relevant for this work. The first section deals with the intrinsic processes in an ideal direct band gap material, starting with a brief summary of the theoretical background followed by the overview of a typical PL scenario. In the second part of the chapter, the role of the lattice-vibrations, the internal electric fields as well as the influence of the band-structure and the dielectric environment are discussed. Finally, extrinsic PL properties are presented in the third section, focusing on defects and disorder in real materials. In chapter 3, the experimental realization of the spectroscopic studies is discussed. The time-resolved photoluminescence (TRPL) setup is presented, focusing on the applied excitation source, non-linear frequency mixing, and the operation of the streak camera used for the detection. In addition, linear spectroscopy setup for continous-wave (CW) PL and absorption measurements is illustrated. Chapter 4 aims at the study of the interactions between electrons and lattice-vibrations in semiconductor crystals relevant for the proper description of carrier dynamics as well as the heat-transfer processes. The presented discussion covers the experimental studies of many-body effects in phonon-assisted emission of semiconductors due to the carriercarrier Coulomb-interaction. The corresponding theoretical background is discussed in detail in chapter 2. The investigations are focused on the two main questions regarding electron-hole plasma contributions to the phonon-assisted light-matter interaction as well as

Photon-phonon laser on crystalline silicon: a feasibility study

International Nuclear Information System (INIS)

Zadernovsky, A A

2015-01-01

We discuss a feasibility of photon-phonon laser action in bulk silicon with electron population inversion. It is well known, that only direct gap semiconductors are used as an active medium in optical lasers. In indirect gap semiconductors, such as crystalline silicon, the near-to-gap radiative electron transitions must be assisted by emission or absorption of phonons to conserve the momentum. The rate of such two-quantum transitions is much less than in direct gap semiconductors, where the similar radiative transitions are single-quantum. As a result, the quantum efficiency of luminescence in silicon is too small to get it as a laser material. Numerous proposals to overcome this problem are aimed at increasing the rate of radiative recombination. We suggest enhancing the quantum efficiency of luminescence in silicon by stimulating the photon part of the two-quantum transitions by light from an appropriate external laser source. This allows us to obtain initially an external-source-assisted lasing in silicon and then a true photon-phonon lasing without any external source of radiation. Performed analysis revealed a number of requirements to the silicon laser medium (temperature, purity and perfection of crystals) and to the intensity of stimulating radiation. We discuss different mechanisms that may hinder the implementation of photon-phonon lasing in silicon

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

International Nuclear Information System (INIS)

Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

2009-01-01

Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

Dynamics of temporally localized states in passively mode-locked semiconductor lasers

Science.gov (United States)

Schelte, C.; Javaloyes, J.; Gurevich, S. V.

2018-05-01

We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

Direct profiling of III/V semiconductor nanostructures at the atomic level by cross-sectional scanning tunneling microscopy

OpenAIRE

Bruls, D.M.

2003-01-01

By means of modern epitaxial growth techniques it is possible to fabricate semiconductor structures that are faster, cheaper and more complicated. They find their implementation in e.g. quantum dot or quantum well lasers. To obtain extra functionality, these devices have to be made so small, that within these structures charge carriers are confined in 2 or 3 dimensions. This results in discrete energy levels, which enable new applications and may solve several problems in the contemporary tec...

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

International Nuclear Information System (INIS)

Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

2013-01-01

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Cascade laser applications: trends and challenges

Science.gov (United States)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

Temperature dependent electronic conduction in semiconductors

International Nuclear Information System (INIS)

Roberts, G.G.; Munn, R.W.

1980-01-01

This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

Gain and Index Dynamics in Semiconductor Lasers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

Science.gov (United States)

Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

2018-01-01

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

Science.gov (United States)

Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

2009-05-25

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

OpenAIRE

Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

2009-01-01

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

Directory of Open Access Journals (Sweden)

Leontyev A.V.

2015-01-01

Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

Two-photon equivalent weighting of spatial excimer laser beam profiles

Science.gov (United States)

Eva, Eric; Bauer, Harry H.; Metzger, K.; Pfeiffer, A.

2001-04-01

Damage in optical materials for semiconductor lithography applications caused by exposure to 248 or 193 nm light is usually two-photon driven, hence it is a nonlinear function of incident intensity. Materials should be tested with flat- topped temporal and spatial laser beam profiles to facilitate interpretation of data, but in reality this is hard to achieve. Sandstrom provided a formula that approximates any given temporal pulse shape with a two- photon equivalent rectangular pulse (Second Symposium on 193 nm Lithography, Colorado Springs 1997). Known as the integral-square pulse duration, this definition has been embraced as an industry standard. Originally faced with the problem of comparing results obtained with pseudo-Gaussian spatial profiles to literature data, we found that a general solution for arbitrarily inhomogeneous spatial beam profiles exists which results in a definition much similar to Sandstrom's. In addition, we proved the validity of our approach in experiments with intentionally altered beam profiles.

Quantum Cascade Lasers Modulation and Applications

Science.gov (United States)

Luzhansky, Edward

The mid-wave IR (MWIR) spectral band, extending from 3 to 5 microns, is considered to be a low loss atmospheric window. There are several spectral sub-bands with relatively low atmospheric attenuation in this region making it popular for various commercial and military applications. Relatively low thermal and solar background emissions, effective penetration through the natural and anthropogenic obscurants and eye safety add to the long list of advantages of MWIR wavelengths. Quantum Cascade Lasers are compact semiconductor devices capable of operating in MWIR spectrum. They are based on inter-subband transitions in a multiple-quantum-well (QW) hetero-structure, designed by means of band-structure engineering. The inter-subband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range of interest. Second, a cascade process in which tens of photons are generated per injected electron. This cascading process is behind the intrinsic high-power capabilities of QCLs. This dissertation is focused on modulation properties of Quantum Cascade Lasers. Both amplitude and phase/frequency modulations were studied including modulation bandwidth, modulation efficiency and chirp linearity. Research was consisted of the two major parts. In the first part we describe the theory of frequency modulation (FM) response of Distributed Feedback Quantum Cascade Lasers (DFB QCL). It includes cascading effect on the QCL's maximum modulation frequency. The "gain levering" effect for the maximum FM response of the two section QCLs was studied as well. In the second part of research we concentrated on the Pulse Position Amplitude Modulation of a single section QCL. The low complexity, low size, weight and power Mid-Wavelength Infra-Red optical communications transceiver concept is

Two opposite hysteresis curves in semiconductors with mobile dopants

OpenAIRE

Lee, Jae Sung; Lee, Shin Buhm; Kahng, Byungnam; Noh, Tae Won

2012-01-01

Recent experimental researches on semiconductors with mobile dopants (SMD) have reported unconventional hysteretic current-voltage (I-V) curves, which form dynamically in either one of the two opposite directions, the counter-figure-eight and figure-eight ways. However the fundamental theory for the formation of the two directions is still absent, and this poses a major barrier for researches oriented to applications. Here, we introduce a theoretical model to explain the origin of the two dir...

Anomalous normal mode oscillations in semiconductor microcavities

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [Univ. of Oregon, Eugene, OR (United States). Dept. of Physics; Hou, H.Q.; Hammons, B.E. [Sandia National Labs., Albuquerque, NM (United States)

1997-04-01

Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

Improved resolution by mounting of tissue sections for laser microdissection.

Science.gov (United States)

van Dijk, M C R F; Rombout, P D M; Dijkman, H B P M; Ruiter, D J; Bernsen, M R

2003-08-01

Laser microbeam microdissection has greatly facilitated the procurement of specific cell populations from tissue sections. However, the fact that a coverslip is not used means that the morphology of the tissue sections is often poor. To develop a mounting method that greatly improves the morphological quality of tissue sections for laser microbeam microdissection purposes so that the identification of target cells can be facilitated. Fresh frozen tissue and formalin fixed, paraffin wax embedded tissue specimens were used to test the morphological quality of mounted and unmounted tissue. The mounting solution consisted of an adhesive gum and blue ink diluted in water. Interference of the mounting solution with DNA quality was analysed by the polymerase chain reaction using 10-2000 cells isolated by microdissection from mounted and unmounted tissue. The mounting solution greatly improved the morphology of tissue sections for laser microdissection purposes and had no detrimental effects on the isolation and efficiency of amplification of DNA. One disadvantage was that the mounting solution reduced the cutting efficiency of the ultraviolet laser. To minimise this effect, the mounting solution should be diluted as much as possible. Furthermore, the addition of blue ink to the mounting medium restores the cutting efficiency of the laser. The mounting solution is easy to prepare and apply and can be combined with various staining methods without compromising the quality of the DNA extracted.

Semiconductor optical amplifiers for the 1000-1100-nm spectral range

International Nuclear Information System (INIS)

Lobintsov, A A; Shramenko, M V; Yakubovich, S D

2008-01-01

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

Generating Far-Infrared Radiation By Two-Wave Mixing

Science.gov (United States)

Borenstain, Shmuel

1992-01-01

Far-infrared radiation 1 to 6 GHz generated by two-wave mixing in asymmetrically grown GaAs/AlxGa1-xAs multiple-quantum-well devices. Two near-infrared semiconductor diode lasers phase-locked. Outputs amplified, then combined in semiconductor nonlinear multiple-quantum-well planar waveguide. Necessary to optimize design of device with respect to three factors: high degree of confinement of electromagnetic field in nonlinear medium to maximize power density, phase matching to extend length of zone of interaction between laser beams in non-linear medium, and nonlinear susceptibility. Devices used as tunable local oscillators in heterodyne-detection radiometers.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Rare resource supply crisis and solution technology for semiconductor manufacturing

Science.gov (United States)

Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

2016-03-01

There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

Special Section on Fusion Laser Engineering

International Nuclear Information System (INIS)

Murray, J. R.; Soures, J. M.

2004-01-01

The National Ignition Facility (NIF) now under construction at Lawrence Livermore National Laboratory contains a large frequency-tripled neodymium glass laser system designed to deliver approximately 2 megajoules of ultraviolet laser light in nanosecond pulses to targets for the study of high-energy-density physics and inertial confinement fusion. When all 192 laser beams are operational in 2008 it will dwarf any currently operating laser system, and even with only four beams now operating it is among the largest and most energetic of such systems. This special section is a collection of papers covering important issues in the optical engineering of large lasers such as NIF. A number of other papers on NIF engineering issues can be found in the Proceedings of SPIE, volume 5341. The first paper by Miller, Moses, and Wuest is an overview of the NIF project and the applications for which the facility was designed. The following papers discuss specific issues in greater depth. Spaeth, et al., discuss the NIF laser architecture, the effect of optical performance specifications on the focal spot size, and some aspects of cleanliness in large laser systems. Bonnano discusses the strategy for assembling NIF from ''line-replaceable units'' (LRU) that are assembled in a cleanroom and transported to the laser system in sealed containers that mate with the laser enclosures and allow clean installations without maintaining cleanroom standards throughout the facility. Zacharias, et al., discuss the alignment and wavefront control systems that allow beams to strike the target within ±50 microns after a beam path of about 350 meters. Shaw, et al., discuss a laser performance operations model that is used to set up the laser for a shot, and compare the predictions of the model to data from the first four operating beams. Ermolaeva, et al. discuss the design and performance of a custom optical fiber that was developed for use in NIF ultraviolet diagnostics. Finally, Honig discusses

A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers

Science.gov (United States)

Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun

2018-03-01

In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

International Nuclear Information System (INIS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-01-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

Science.gov (United States)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (7100 GHz) by mode locking

International Nuclear Information System (INIS)

Lau, K.Y.

1990-01-01

This paper reports on the possibility of mode locking a semiconductor laser at millimeter wave frequencies approaching and beyond 100 GHz which was investigated theoretically and experimentally. It is found that there are no fundamental theoretical limitations in mode locking at frequencies below 100 GHz. AT these high frequencies, only a few modes are locked and the output usually takes the form of a deep sinusoidal modulation which is synchronized in phase with the externally applied modulation at the intermodal heat frequency. This can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier over a narrow band at millimeter wave frequencies. Both active and passive mode locking are theoretically possible. Experimentally, predictions on active mode locking have been verified in prior publications up to 40 GHz. For passive mode locking, evidence consistent with passive mode locking was observed in an inhomogeneously pumped GaAIAs laser at a frequency of approximately 70 GHz. A large differential gain-absorption ratio such as that present in an inhomogeneously pumped single quantum well laser is necessary for pushing the passive mode-locking frequency beyond 100 GHz

Nitride semiconductor devices fundamentals and applications

CERN Document Server

Morkoç, Hadis

2013-01-01

This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

Laser Raman and resonance Raman spectroscopies of natural semiconductor mineral cinnabar, α-HgS, from various mines

International Nuclear Information System (INIS)

Gotoshia, Sergo V; Gotoshia, Lamara V

2008-01-01

Natural minerals α-HgS from various mines have been studied by laser Raman spectroscopy and resonance Raman spectroscopy. The crystals differ from each other in the content of selenium impurity, included in samples from some mines. Based on the Raman spectra and the factor-group analysis the classification of the first order phonons and then the comparison of the results with the results from other works were carried out. The Raman spectra analysis of minerals from various mines show the selenium impurity gap vibration at 203 cm -1 and 226 cm -1 frequencies, respectively. On the basis of statistical measurements of the Raman spectra one can conclude that impurity frequencies of α-HgS may be generally used for the identification of the mine. Resonance Raman scattering for pure minerals has been studied by a dye laser. Phonon resonance in the indirect semiconductor α-HgS is found to be far more intense than the indirect resonance detected until now in various semiconductors in the proximity of the first indirect band E g , for instance, in GaP. In our opinion, this may be conditioned by cinnabar band structure peculiarities. Low resonance has also been fixed in 'dirty' minerals at the spectral band frequency of 203 cm -1 characterizing gap vibration of isomorphic impurity Se in cinnabar

Multi-user bidirectional communication using isochronal synchronisation of array of chaotic directly modulated semiconductor lasers

International Nuclear Information System (INIS)

Krishna, Bindu M.; John, Manu P.; Nandakumaran, V.M.

2010-01-01

Isochronal synchronisation between the elements of an array of three mutually coupled directly modulated semiconductor lasers is utilized for the purpose of simultaneous bidirectional secure communication. Chaotic synchronisation is achieved by adding the coupling signal to the self feedback signal provided to each element of the array. A symmetric coupling is effective in inducing synchronisation between the elements of the array. This coupling scheme provides a direct link between every pair of elements thus making the method suitable for simultaneous bidirectional communication between them. Both analog and digital messages are successfully encrypted and decrypted simultaneously by each element of the array.

Nanowire Lasers

Directory of Open Access Journals (Sweden)

Couteau C.

2015-05-01

Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

Proceedings of the IEEE laser and electro-optics society annual meeting

International Nuclear Information System (INIS)

Hudson, M.J.B.; Raney, H.; Raney, D.; Spalaris, C.N.

1990-01-01

This book is covered under the following headings: Electro-optic systems; Emerging laser technology; Optical sensors and measurements; Optoelectronics; Semiconductor diode lasers; Solid state lasers; UV and short wavelength; Applied optical diagnostics of semiconductor materials and devices symposium and optical sensors and measurements; and Applied optical diagnostics of semiconductor materials and devices symposium

Polarised two-photon excitation of quantum well excitons for manipulation of optically pumped terahertz lasers

Energy Technology Data Exchange (ETDEWEB)

Slavcheva, G., E-mail: gsk23@bath.ac.uk [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Kavokin, A.V., E-mail: A.Kavokin@soton.ac.uk [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Spin Optics Laboratory, St. Petersburg State University, 1, Ulyanovskaya 198504 (Russian Federation)

2014-11-15

Optical pumping of excited exciton states in a semiconductor quantum well embedded in a microcavity is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarisation of both pumping photons. Five-fold variation of the threshold power for terahertz lasing by switching from circular to co-linear pumping is predicted. We identify photon polarisation configurations for achieving maximum THz photon generation quantum efficiency.

Analysis of small-signal intensity modulation of semiconductor ...

Indian Academy of Sciences (India)

This paper demonstrates theoretical characterization of intensity modulation of semiconductor lasers (SL's). The study is based on a small-signal model to solve the laser rate equations taking into account suppression of optical gain. Analytical forms of the small-signal modulation response and modulation bandwidth are ...

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Fiber-distributed feedback lasers for high-speed wavelength-division multiplexed networks

DEFF Research Database (Denmark)

Sejka, Milan; Hübner, Jörg; Varming, Poul

1996-01-01

Summary form only given. In conclusion, we have demonstrated that fiber DFB lasers constitute an excellent alternative to commercially available semiconductor DFB lasers. We have also shown that two fiber DFB lasers can be spliced together without any BER power penalty. Therefore, we suggest...... the possibility of using a single pump source for pumping a WDM laser array consisting of a number of fiber lasers spliced in series....

Modeling the DBR laser used as wavelength conversion device

DEFF Research Database (Denmark)

Braagaard, Carsten; Mikkelsen, Benny; Durhuus, Terji

1994-01-01

In this paper, a novel and efficient way to model the dynamic field in optical DBR-type semiconductor devices is presented. The model accounts for the longitudinal carrier, photon, and refractive index distribution. Furthermore, the model handles both active and passive sections that may include...... gratings. Thus, simulations of components containing, e.g., gain sections, absorptive sections, phase sections, and gratings, placed arbitrarily along the longitudinal direction of the cavity, are possible. Here, the model has been used for studying the DBR laser as a wavelength converter. Particularly...

Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

Energy Technology Data Exchange (ETDEWEB)

Barseghyan, M.G., E-mail: mbarsegh@ysu.am

2016-11-10

Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

Spectra of magnetoplasma polaritons in a semiconductor layer on a metallic substrate

International Nuclear Information System (INIS)

Beletsekii, N.N.; Gasan, E.A.; Yakovenko, V.M.

1988-01-01

The dispersion properties of volume and surface magnetoplasma polaritons in a three-layer metal-semiconductor-insulator structure are studied. It is predicted that surface magnetoplasma polaritons propagating on the two boundaries of the semiconductor layer interact resonantly. It is shown that for a certain direction of propagation the dispersion curves of surface and volume magnetoplasma polaritons contain sections with negative dispersion. Nonreciprocal propagation of volume magnetoplasma polaritons has been observed. Losses in the semiconductor layer split the starting spectral lines into dispersion curves of two types, corresponding to forward and backward waves

Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2015-01-01

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

Organic solid-state lasers

CERN Document Server

Forget, Sébastien

2013-01-01

Organic lasers are broadly tunable coherent sources, potentially compact, convenient and manufactured at low-costs. Appeared in the mid 60’s as solid-state alternatives for liquid dye lasers, they recently gained a new dimension after the demonstration of organic semiconductor lasers in the 90's. More recently, new perspectives appeared at the nanoscale, with organic polariton and surface plasmon lasers. After a brief reminder to laser physics, a first chapter exposes what makes organic solid-state organic lasers specific. The laser architectures used in organic lasers are then reviewed, with a state-of-the-art review of the performances of devices with regard to output power, threshold, lifetime, beam quality etc. A survey of the recent trends in the field is given, highlighting the latest developments with a special focus on the challenges remaining for achieving direct electrical pumping of organic semiconductor lasers. A last chapter covers the applications of organic solid-state lasers.

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

International Nuclear Information System (INIS)

Wang Hanchao; Huang Lirong; Shi Zhongwei

2011-01-01

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

Electron–hole two-stream instability in a quantum semiconductor plasma with exchange-correlation effects

International Nuclear Information System (INIS)

Zeba, I.; Yahia, M.E.; Shukla, P.K.; Moslem, W.M.

2012-01-01

The electron–hole two-stream instability in a quantum semiconductor plasma has been studied including electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures of the plasma species. Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate of the two-stream instability. The effects of electron– and hole–phonon collision, quantum recoil effects, the streaming velocities, and the corresponding threshold on the growth rate are investigated numerically. Considering the phonon susceptibility allows the acoustic mode to exist and the collisional instability arises in combination with drift of the holes. -- Highlights: ► Electron–hole two stream instability in quantum plasmas is presented. ► Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate. ► The streaming velocities and the corresponding threshold on the growth rate are investigated numerically.

41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

DEFF Research Database (Denmark)

Dontabactouny, M.; Piron, R.; Klaime, K.

2012-01-01

This paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode-locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 mu m at 20 degrees C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 m...

Laser interferometry in length measurement. Proceedings. Laserinterferometrie in der Laengenmesstechnik. Vortraege

Energy Technology Data Exchange (ETDEWEB)

1985-01-01

Wavelength-stabilized lasers for length measurement, measurements of the refractive index of air, laser interferometers, acceptance tests of laser interferometer systems, the Michelson interferometer with semiconductor laser, and the state of the art of optical gyroscopes for angular position measurement are described in the general section. The examples of laser interferometer applications in production engineering comprise automatic acceptance testing of coordinate measuring systems, simultaneous laser measurements of the position and the pitching, yansing and rolling angles along a measuring line, a 3D-interferometer length measuring system, the calibration of standard measures, angular position measurements, straightness measurements, and laser interferometers as installed length measuring systems in machine tools and measuring machinery. There are no separate records of the 13 lectures presented at the meeting. (DG).

Two-photon excited whispering-gallery mode ultraviolet laser from an individual ZnO microneedle

Science.gov (United States)

Zhu, G. P.; Xu, C. X.; Zhu, J.; Lv, C. G.; Cui, Y. P.

2009-02-01

Wurtzite structural ZnO microneedles with hexagonal cross section were fabricated by vapor-phase transport method and an individual microneedle was employed as a lasing microcavity. Under excitation of a femtosecond pulse laser with 800 nm wavelength, the ultraviolet (UV) laser emission was obtained, which presented narrow linewidth and high Q value. The UV emission, resonant mechanism, and laser mode characteristics were discussed in detail. The results demonstrated that the UV laser originated from the whispering-gallery mode induced by two-photon absorption assisted by Rabi oscillation.

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

Science.gov (United States)

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

Controlling semiconductor nanoparticle size distributions with tailored ultrashort pulses

International Nuclear Information System (INIS)

Hergenroeder, R; Miclea, M; Hommes, V

2006-01-01

The laser generation of size-controlled semiconductor nanoparticle formation under gas phase conditions is investigated. It is shown that the size distribution can be changed if picosecond pulse sequences of tailored ultra short laser pulses (<200 fs) are employed. By delivering the laser energy in small packages, a temporal energy flux control at the target surface is achieved, which results in the control of the thermodynamic pathway the material takes. The concept is tested with silicon and germanium, both materials with a predictable response to double pulse sequences, which allows deduction of the materials' response to complicated pulse sequences. An automatic, adaptive learning algorithm was employed to demonstrate a future strategy that enables the definition of more complex optimization targets such as particle size on materials less predictable than semiconductors

Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

International Nuclear Information System (INIS)

Ahmad, H; Zulkifli, M Z; Thambiratnam, K; Latiff, A A; Harun, S W

2009-01-01

In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at –5 dBm, while to SOA-based SWFL has a peak power of only –10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

International Nuclear Information System (INIS)

Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

2010-01-01

Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

Science.gov (United States)

Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

2010-06-01

Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

Energy Technology Data Exchange (ETDEWEB)

Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

2013-10-15

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

International Nuclear Information System (INIS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2013-01-01

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots

Ultrafast dynamics of photoexcited charge and spin currents in semiconductor nanostructures

Science.gov (United States)

Meier, Torsten; Pasenow, Bernhard; Duc, Huynh Thanh; Vu, Quang Tuyen; Haug, Hartmut; Koch, Stephan W.

2007-02-01

Employing the quantum interference among one- and two-photon excitations induced by ultrashort two-color laser pulses it is possible to generate charge and spin currents in semiconductors and semiconductor nanostructures on femtosecond time scales. Here, it is reviewed how the excitation process and the dynamics of such photocurrents can be described on the basis of a microscopic many-body theory. Numerical solutions of the semiconductor Bloch equations (SBE) provide a detailed description of the time-dependent material excitations. Applied to the case of photocurrents, numerical solutions of the SBE for a two-band model including many-body correlations on the second-Born Markov level predict an enhanced damping of the spin current relative to that of the charge current. Interesting effects are obtained when the scattering processes are computed beyond the Markovian limit. Whereas the overall decay of the currents is basically correctly described already within the Markov approximation, quantum-kinetic calculations show that memory effects may lead to additional oscillatory signatures in the current transients. When transitions to coupled heavy- and light-hole valence bands are incorporated into the SBE, additional charge and spin currents, which are not described by the two-band model, appear.

Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

International Nuclear Information System (INIS)

Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

2005-01-01

The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Weber, Carsten

2008-07-01

This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

Advanced Laser Architecture for Two-Step Laser Tandem Mass Spectrometer

Science.gov (United States)

Fahey, Molly E.; Li, Steven X.; Yu, Anthony W.; Getty, Stephanie A.

2016-01-01

Future astrobiology missions will focus on planets with significant astrochemical or potential astrobiological features, such as small, primitive bodies and the icy moons of the outer planets that may host diverse organic compounds. These missions require advanced instrument techniques to fully and unambiguously characterize the composition of surface and dust materials. Laser desorptionionization mass spectrometry (LDMS) is an emerging instrument technology for in situ mass analysis of non-volatile sample composition. A recent Goddard LDMS advancement is the two-step laser tandem mass spectrometer (L2MS) instrument to address the need for future flight instrumentation to deconvolve complex organic signatures. The L2MS prototype uses a resonance enhanced multi-photon laser ionization mechanism to selectively detect aromatic species from a more complex sample. By neglecting the aliphatic and inorganic mineral signatures in the two-step mass spectrum, the L2MS approach can provide both mass assignments and clues to structural information for an in situ investigation of non-volatile sample composition. In this paper we will describe our development effort on a new laser architecture that is based on the previously flown Lunar Orbiter Laser Altimeter (LOLA) laser transmitter for the L2MS instrument. The laser provides two discrete midinfrared wavelengths (2.8 m and 3.4 m) using monolithic optical parametric oscillators and ultraviolet (UV) wavelength (266 nm) on a single laser bench with a straightforward development path toward flight readiness.

Laser warning receiver to identify the wavelength and angle of arrival of incident laser light

Science.gov (United States)

Sinclair; Michael B.; Sweatt, William C.

2010-03-23

A laser warning receiver is disclosed which has up to hundreds of individual optical channels each optically oriented to receive laser light from a different angle of arrival. Each optical channel has an optical wedge to define the angle of arrival, and a lens to focus the laser light onto a multi-wavelength photodetector for that channel. Each multi-wavelength photodetector has a number of semiconductor layers which are located in a multi-dielectric stack that concentrates the laser light into one of the semiconductor layers according to wavelength. An electrical signal from the multi-wavelength photodetector can be processed to determine both the angle of arrival and the wavelength of the laser light.

Study on the ablation threshold induced by pulsed lasers at different wavelengths

International Nuclear Information System (INIS)

Torrisi, L.; Borrielli, A.; Margarone, D.

2007-01-01

A study of the effects induced by pulsed laser ablation on different materials as a function of the laser wavelength is presented. In particular the ablation at low laser fluence, of the order of 10 8 -10 10 W/cm 2 with ns pulse width, is investigated experimentally on different metals, semiconductors and polymers. Two theoretical models, explain the experimental results about the fluence threshold value measurements, as depending on the laser wavelength are discussed. The photothermal process is valid for the estimation of the threshold fluence for IR and visible radiation, both inducing thermal heating in metals and semiconductors through the photon-free electron energy transfer. This model is not valid for polymers. The photochemical process is valid for the estimation of the threshold fluence for UV radiation, which photon energy is higher with respect to the chemical binding energy. This radiation induces chemical bond breaking in insulators and scission and cross linking effects can be produced. This last model is not valid for metals and semiconductors

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Excitons in atomically thin 2D semiconductors and their applications

Science.gov (United States)

Xiao, Jun; Zhao, Mervin; Wang, Yuan; Zhang, Xiang

2017-06-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

Energy Technology Data Exchange (ETDEWEB)

Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

2015-08-15

A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

Energy Technology Data Exchange (ETDEWEB)

Bueckers, Christina

2010-12-03

A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

Wide-band residual phase-noise measurements on 40-GHz monolithic mode-locked lasers

DEFF Research Database (Denmark)

Larsson, David; Hvam, Jørn Märcher

2005-01-01

We have performed wide-band residual phase-noise measurements on semiconductor 40-GHz mode-locked lasers by employing electrical waveguide components for the radio-frequency circuit. The intrinsic timing jitters of lasers with one, two, and three quantum wells (QW) are compared and our design......-QW laser. There is good agreement between the measured results and existing theory....

Semiconductor Optics

CERN Document Server

Klingshirn, Claus F

2012-01-01

This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

Printed organic smart devices characterized by ultra-short laser pulses

DEFF Research Database (Denmark)

Pastorelli, Francesco

Resume: In this study, we demonstrate that nonlinear optical microscopy is a promising technique to characterize organic printed electronics. Using ultrashort laser pulses we stimulate two-photon absorption in a roll coated polymer semiconductor and map the resulting two-photon induced...

Stability of period-one (P1) oscillations generated by semiconductor lasers subject to optical injection or optical feedback.

Science.gov (United States)

Lin, Lyu-Chih; Liu, Ssu-Hsin; Lin, Fan-Yi

2017-10-16

We study the stability of period-one (P1) oscillations experimentally generated by semiconductor lasers subject to optical injection (OI) and by those subject to optical feedback (OF). With unique advantages of broad frequency tuning range and large sideband rejection ratio, P1 oscillations can be useful in applications such as photonic microwave generation, radio-over-fiber communication, and laser Doppler velocimeter. The stability of the P1 oscillations is critical for these applications, which can be affected by spontaneous emission and fluctuations in both temperature and injection current. Although linewidths of P1 oscillations generated by various schemes have been reported, the mechanisms and roles which each of the OI and the OF play have however not been investigated in detail. To characterize the stability of the P1 oscillations generated by the OI and the OF schemes, we measure the linewidths and linewidth reduction ratios (LRRs) of the P1 oscillations. The OF scheme has a narrowest linewidth of 0.21 ± 0.03 MHz compared to 4.7 ± 0.6 MHz in the OI scheme. In the OF scheme, a much larger region of LRRs higher than 90% is also found. The superior stability of the OF scheme is benefited by the fact that the P1 oscillations in the OF scheme are originated from the undamped relaxation oscillation of a single laser and can be phase-locked to one of its external cavity modes, whereas those in the OI scheme come from two independent lasers which bear no phase relation. Moreover, excess P1 linewidth broadening in the OI scheme caused by fluctuation in injection parameters associated with frequency jitter and relative intensity noise (RIN) is also minimized in the OF scheme.

The Physics of Semiconductors

Science.gov (United States)

Brennan, Kevin F.

1999-02-01

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Phonon-assisted two-photon exciton transitions in semiconductors

International Nuclear Information System (INIS)

Hassan, A.R.

1987-08-01

The theory of phonon-assisted two-photon transitions to excitonic states in semiconductors has been theoretically investigated. The effects of both the nonparabolicity of the band and the degeneracy of the valence band have been taken into account. Expressions for the absorption coefficient through different band models are calculated. The numerical applications to CdI 2 and GaP show that the 4-band model gives the dominant contribution which leads to a final s-exciton state. An exciton peak appears at an energy which is close to that recently observed in CdI 2 . The non-parabolic effect enhances the absorption coefficient by a two-order of magnitude. (author). 6 refs, 1 fig., 1 tab

ON THE ARTIFICIAL SEMICONDUCTOR MATERIALS | Adelabu ...

African Journals Online (AJOL)

For about the last three decades, semiconductor technology began to make its most apparent impact in Solid State Electronics. The field of photonics, which combines laser physics, electro-optics and nonlinear optics has expanded tremendously. Notably, modern light wave communications exemplify photonic systems.

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

Science.gov (United States)

Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

2016-12-05

The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

Collisional absorption of two laser beams in plasma

International Nuclear Information System (INIS)

Mohan, M.; Acharya, R.

1977-04-01

The collisional absorption of two laser beams is considered by solving the kinetic equation for the plasma electron. Results show that the simultaneous effect of two laser beams on the heating rate is greater as compared with the individual contribution of each laser beam when the two laser beams have a difference of frequencies equal to the plasma frequency

Two-arm semiconductor spectrometer for charged particles for the investigation of absorption by nuclei of stopped negative pions

International Nuclear Information System (INIS)

Gornov, M.G.; Gurov, Yu.B.; Lukin, A.S.; Morokhov, P.V.; Pechkurov, V.A.; Pichugin, A.P.; Saveliev, V.I.; Shafigullin, R.R.; Sergeev, F.M.; Khomutov, A.A.; Oganesian, K.O.; Osipenko, B.P.; Sandukovsky, V.G.

1984-01-01

A two-arm semiconductor spectrometer for the detection of secondary charged particles, such as p, d, t, 3 He, 4 He and of their correlations in the process of stopped pion absorption by nuclei is described. The spectrometer consists of two telescopes of Si-detectors with a sensitive surface of 800 mm 2 , two semiconductor detectors as monitors and the 'live' target, a silicon surface barrier detector. The number of semiconductor detectors is 19. A technique for pion stop selection in thin targets is described. The problem of particle identification and of measurements of their energy with the help of a multicrystal semiconductor telescope is discussed. The technique provides an absolute normalization of spectra. The 'alive' target helps to obtain more information on the process of pion absorption by Si-nuclei. (orig.)

Laser-Printed Organic Thin-Film Transistors

KAUST Repository

Diemer, Peter J.

2017-09-20

Solution deposition of organic optoelectronic materials enables fast roll-to-roll manufacturing of photonic and electronic devices on any type of substrate and at low cost. But controlling the film microstructure when it crystallizes from solution can be challenging. This represents a major limitation of this technology, since the microstructure, in turn, governs the charge transport properties of the material. Further, the solvents typically used are hazardous, which precludes their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive manufacturing method allows for simultaneous deposition, purification, and patterning of the organic semiconductor layer. Laser-printed transistors using triisopropylsilylethynyl pentacene as the semiconductor layer are realized on flexible substrates and characterized, making this a successful first demonstration of the potential of laser printing of organic semiconductors.

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Nonlinear laser dynamics from quantum dots to cryptography

CERN Document Server

Lüdge, Kathy

2012-01-01

A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research.By presenting both experimental and theoretical results, the distinguished authors consider solitary lase

Lasers: principles, applications and energetic measures

International Nuclear Information System (INIS)

Subran, C.; Sagaut, J.; Lapointe, S.

2009-01-01

After having recalled the principles of a laser and the properties of the laser beam, the authors describe the following different types of lasers: solid state lasers, fiber lasers, semiconductor lasers, dye lasers and gas lasers. Then, their applications are given. Very high energy lasers can reproduce the phenomenon of nuclear fusion of hydrogen atoms. (O.M.)

Fluorescence excitation analysis by two-photon confocal laser scanning microscopy: a new method to identify fluorescent nanoparticles on histological tissue sections

Directory of Open Access Journals (Sweden)

Kahn E

2012-10-01

Full Text Available Edmond Kahn,1 Nicolas Tissot,3 Perrine Frere,3 Aurélien Dauphin,3 Mohamed Boumhras,2,4 Claude-Marie Bachelet,3 Frédérique Frouin,1 Gérard Lizard21Institut National de la Santé et de la Recherche Médicale (INSERM U678/UMR-S UPMC, CHU Pitié-Salpêtrière, Paris, France; 2Equipe Biochimie du Peroxysome, Inflammation et Métabolisme Lipidique EA7270, Faculté des Sciences Gabriel, Université de Bourgogne-INSERM Dijon, France; 3Plateforme d'Imagerie cellulaire, UPMC, Paris, France; 4Laboratory of Biochemistry and Neuroscience, Applied Toxicology Group, Faculty of Science and Technology, Settat, MoroccoAbstract: In the present study, we make use of the ability of two-photon confocal laser scanning microscopes (CLSMs equipped with tunable lasers to produce spectral excitation image sequences. Furthermore, unmixing, which is usually performed on emission image sequences, is performed on these excitation image sequences. We use factor analysis of medical image sequences (FAMIS, which produces factor images, to unmix spectral image sequences of stained structures in tissue sections to provide images of characterized stained cellular structures. This new approach is applied to histological tissue sections of mouse aorta containing labeled iron nanoparticles stained with Texas Red and counterstained with SYTO13, to obtain visual information about the accumulation of these nanoparticles in the arterial wall. The possible presence of Texas Red is determined using a two-photon CLSM associated with FAMIS via the excitation spectra. Texas Red and SYTO13 are thus differentiated, and corresponding factor images specify their possible presence and cellular localization. In conclusion, the designed protocol shows that sequences of images obtained by excitation in a two-photon CLSM enables characterization of Texas Red-stained nanoparticles and other markers. This methodology offers an alternative and complementary solution to the conventional use of emission

Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

Science.gov (United States)

Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

2013-10-09

In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Photoionization cross-section of donor impurity in spherical quantum dots under electric and intense laser fields

International Nuclear Information System (INIS)

Burileanu, L.M.

2014-01-01

Using a perturbative method we have investigated the behavior of the binding energy and photoionization cross-section of a donor impurity in spherical GaAs–GaAlAs quantum dots under the influence of electric and intense high-frequency laser fields. The dependencies of the binding energy and photoionization cross-section on electric and laser field strength, dot radius and impurity position were investigated. Our results show that the amplitude of photoionization cross-section grows with the dot radius increase and the peak of the cross-section blue shifts with the laser intensity increment. We have found that the binding energy is not a monotonically function of laser intensity: it decreases or increases depending on electric field regime. The studied effects are even more pronounced as the quantum dot radius is smaller. -- Highlights: • A photoionization cross-section study in quantum dots under laser and electric fields. • The photoionization cross-section peaks are red shifted by the electric field. • The photoionization cross-section peaks are blue shifted by the laser field. • The combined effects of applied fields strongly affect the binding energy

Improved resolution by mounting of tissue sections for laser microdissection.

NARCIS (Netherlands)

Dijk, M.C.R.F. van; Rombout, P.D.M.; Dijkman, H.B.P.M.; Ruiter, D.J.; Bernsen, M.R.

2003-01-01

BACKGROUND: Laser microbeam microdissection has greatly facilitated the procurement of specific cell populations from tissue sections. However, the fact that a coverslip is not used means that the morphology of the tissue sections is often poor. AIMS: To develop a mounting method that greatly

Multiquantum well beam-steering device for laser satellite communication

Science.gov (United States)

Lahat, Roee; Levy, Itamar; Shlomi, Arnon

2002-01-01

With the increasing interest in laser satellite communications, new methods are sought to solve the existing problems of accurate and rapid laser beam deflection. Current solutions in the form of galvanometers or piezo fast steering mirrors with one or two degrees of freedom are bulky, power-consuming and slow. The Multi-Quantum Well (MQW) is a semiconductor device with unique potential to steer laser beams without any moving parts. We have conducted a preliminary evaluation of the potential application of the MQW as a laser beam-steering device for laser satellite communication, examining the performance of critical parameters for this type of communications.

Lasers

CERN Document Server

Milonni, Peter W

1988-01-01

A comprehensive introduction to the operating principles and applications of lasers. Explains basic principles, including the necessary elements of classical and quantum physics. Provides concise discussions of various laser types including gas, solid state, semiconductor, and free electron lasers, as well as of laser resonators, diffraction, optical coherence, and many applications including holography, phase conjugation, wave mixing, and nonlinear optics. Incorporates many intuitive explanations and practical examples. Discussions are self-contained in a consistent notation and in a style that should appeal to physicists, chemists, optical scientists and engineers.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

Energy Technology Data Exchange (ETDEWEB)

Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-06-15

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

International Nuclear Information System (INIS)

Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

2016-01-01

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

International Nuclear Information System (INIS)

Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M

2016-01-01

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)

Operational characteristics of dual gain single cavity Nd:YVO 4 laser

Indian Academy of Sciences (India)

Operational characteristics of a dual gain single cavity Nd:YVO4 laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be ...

Analysis of small-signal intensity modulation of semiconductor ...

Indian Academy of Sciences (India)

Computer simulation of the model is applied to 1.55-µm ... Semiconductor laser; small-signal modulation; modulation response; gain suppression. ... originates from intraband relaxation processes of charge carriers that extend for times as ...

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Science.gov (United States)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Donors in Semiconductors - are they Understood in Electronic Era?

International Nuclear Information System (INIS)

Dmochowski, Janusz E

2007-01-01

The physics of semiconductors and contemporary electronics cannot be understood without impurities. The hydrogen-like shallow donor (and acceptor) state of electron (hole) bound by Coulomb electrostatic force of excess charge of impurity is used to control conductivity of semiconductors and construct semiconductor diodes, transistors and numerous types of semiconductor electronic and optoelectronic devices, including lasers. Recently, surprisingly, the physics of impurity donors appeared to be much reacher. Experimental evidence has been provided for universal existence of other types of electronic states of the same donor impurity: i) mysterious, deep, DX-type state resulting in metastability - slow hysteresis phenomena - understood as two-electron, acceptor-like state of donor impurity, formed upon large lattice distortion or rearrangement around impurity and accompanying capture of second electron, resulting in negative electron correlation energy U; ii) deep, localized, fully symmetric, A1, one-electron donor state of substitutional impurity. The latter state can be formed from the 'ordinary' shallow hydrogen-like state in the process of strong localization of electron by short range, local potential of impurity core, preserving full (A 1 ) symmetry of the substitutional impurity in the host lattice. The 'anticrossing' of the two A 1 (shallow hydrogenic and deep localized) energy levels upon transformation is observed. All types of electronic states of impurity can be universally observed for the same donor impurity and mutual transformation between different states occur upon changing experimental conditions. The knowledge about existence and properties of these n ew , molecular type, donor states in semiconductors seems still await general recognition and positive application in contemporary material and device science and engineering