Magnetic quantum dot in two-dimensional topological insulators
Li, Guo; Zhu, Jia-Lin; Yang, Ning
2017-03-01
Magnetic quantum dots in two-dimensional band and topological insulators are studied by solving the modified Dirac model under nonuniform magnetic fields. The Landau levels split into discrete states with certain angular momentum. The states splitting from the zero Landau levels lie in the energy gap for topological insulators but are out of the gap for band insulators. It is found that the ground states oscillate between the spin-up and spin-down states when the magnetic field or the dot size changes. The oscillation manifests itself as changes of sign and strength of charge currents near the dot's edge.
Imperfect two-dimensional topological insulator field-effect transistors
Vandenberghe, William G.; Fischetti, Massimo V.
2017-01-01
To overcome the challenge of using two-dimensional materials for nanoelectronic devices, we propose two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering. We model transistors made of two-dimensional topological insulator ribbons accounting for scattering with phonons and imperfections. In the on-state, the Fermi level lies in the bulk bandgap and the electrons travel ballistically through the topologically protected edge states even in the presence of imperfections. In the off-state the Fermi level moves into the bandgap and electrons suffer from severe back-scattering. An off-current more than two-orders below the on-current is demonstrated and a high on-current is maintained even in the presence of imperfections. At low drain-source bias, the output characteristics are like those of conventional field-effect transistors, at large drain-source bias negative differential resistance is revealed. Complementary n- and p-type devices can be made enabling high-performance and low-power electronic circuits using imperfect two-dimensional topological insulators. PMID:28106059
Conformal QED in two-dimensional topological insulators
Menezes, N; Smith, C Morais
2016-01-01
It has been shown recently that local four-fermion interactions on the edges of two-dimensional time-reversal-invariant topological insulators give rise to a new non-Fermi-liquid phase, called helical Luttinger liquid (HLL). In this work, we provide a first-principle derivation of this non-Fermi-liquid phase based on the gauge-theory approach. Firstly, we derive a gauge theory for the edge states by simply assuming that the interactions between the Dirac fermions at the edge are mediated by a quantum dynamical electromagnetic field. Here, the massless Dirac fermions are confined to live on the one-dimensional boundary, while the (virtual) photons of the U(1) gauge field are free to propagate in all the three spatial dimensions that represent the physical space where the topological insulator is embedded. We then determine the effective 1+1-dimensional conformal field theory (CFT) given by the conformal quantum electrodynamics (CQED). By integrating out the gauge field in the corresponding partition function, ...
Two-dimensional topological crystalline insulator phase in quantum wells of trivial insulators
Niu, Chengwang; Buhl, Patrick M.; Bihlmayer, Gustav; Wortmann, Daniel; Blügel, Stefan; Mokrousov, Yuriy
2016-06-01
The realization of two-dimensional (2D) topological insulators (TIs) in HgTe/CdTe quantum wells (QWs) has generated an explosion of research on TIs and novel topologically nontrivial phases. Here we predict, based on first-principles calculations, that the newly discovered 2D topological crystalline insulators (TCIs) phase exists even in the QWs of trivial insulators, e.g. (Sn/Pb)Te and Na(Cl/Br), with mirror Chern number {n}{{M}}=-2. Tunable nontrivial energy gaps ranging from 4 to 238 meV are obtained, guaranteeing further room-temperature observations and applications. The combined effect of strain and electrostatic interaction that can be engineered by the cladding layers leads to a band inversion, resulting in the phase transition from trivial insulator to 2D TCIs. Our work provides a new strategy for engineering topological states in 2D materials.
Chen, M. N.; Su, W.; Deng, M. X.; Ruan, Jiawei; Luo, W.; Shao, D. X.; Sheng, L.; Xing, D. Y.
2016-11-01
A great deal of attention has been paid to the topological phases engineered by photonics over the past few years. Here, we propose a topological quantum phase transition to a quantum anomalous Hall (QAH) phase induced by off-resonant circularly polarized light in a two-dimensional system that is initially in a quantum spin Hall phase or a trivial insulator phase. This provides an alternative method to realize the QAH effect, other than magnetic doping. The circularly polarized light effectively creates a Zeeman exchange field and a renormalized Dirac mass, which are tunable by varying the intensity of the light and drive the quantum phase transition. Both the transverse and longitudinal Hall conductivities are studied, and the former is consistent with the topological phase transition when the Fermi level lies in the band gap. A highly controllable spin-polarized longitudinal electrical current can be generated when the Fermi level is in the conduction band, which may be useful for designing topological spintronics.
Spin-orbit torque in two-dimensional antiferromagnetic topological insulators
Ghosh, S.
2017-01-24
We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.
Topological origin of edge states in two-dimensional inversion-symmetric insulators and semimetals
van Miert, Guido; Ortix, Carmine; Morais Smith, Cristiane
2017-03-01
Symmetries play an essential role in identifying and characterizing topological states of matter. Here, we classify topologically two-dimensional (2D) insulators and semimetals with vanishing spin-orbit coupling using time-reversal ({ T }) and inversion ({ I }) symmetry. This allows us to link the presence of edge states in { I } and { T } symmetric 2D insulators, which are topologically trivial according to the Altland-Zirnbauer table, to a {{{Z}}}2 topological invariant. This invariant is directly related to the quantization of the Zak phase. It also predicts the generic presence of edge states in Dirac semimetals, in the absence of chiral symmetry. We then apply our findings to bilayer black phosphorus and show the occurrence of a gate-induced topological phase transition, where the {{{Z}}}2 invariant changes.
Helical bound states in the continuum of the edge states in two dimensional topological insulators
Energy Technology Data Exchange (ETDEWEB)
Sablikov, Vladimir A., E-mail: sablikov@gmail.com; Sukhanov, Aleksei A.
2015-09-04
We study bound states embedded into the continuum of edge states in two-dimensional topological insulators. These states emerge in the presence of a short-range potential of a structural defect coupled to the boundary. In this case the edge states flow around the defect and have two resonances in the local density of states. The bound state in continuum (BIC) arises due to an interference of the resonances when they are close to the degeneracy. We find the condition under which the BIC appears, study the spacial distribution of the electron density, and show that the BIC has a helical structure with an electron current circulating around the defect. - Highlights: • We find bound states in the continuum of edge states in 2D topological insulators. • The bound states are induced by an impurity potential and topological order. • The bound state in the continuum has a helical structure of spin and current density.
Nuclear-spin-induced localization of edge states in two-dimensional topological insulators
Hsu, Chen-Hsuan; Stano, Peter; Klinovaja, Jelena; Loss, Daniel
2017-08-01
We investigate the influence of nuclear spins on the resistance of helical edge states of two-dimensional topological insulators (2DTIs). Via the hyperfine interaction, nuclear spins allow electron backscattering, otherwise forbidden by time-reversal symmetry. We identify two backscattering mechanisms, depending on whether the nuclear spins are ordered or not. Their temperature dependence is distinct but both give resistance, which increases with the edge length, decreasing temperature, and increasing strength of the electron-electron interaction. Overall, we find that the nuclear spins will typically shut down the conductance of the 2DTI edges at zero temperature.
Energy Technology Data Exchange (ETDEWEB)
Sukhanov, Aleksei A.
2017-05-15
We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a trivial insulator, the energy difference between the levels of the ground state and first excited state can decrease with decreasing the radius and increasing the depth of the QD so that these levels intersect under some critical condition. The crossing of the levels results in unusual features of optical properties caused by intraceneter electron transitions. In particular, it leads to significant changes of light absorption due to electron transitions between such levels and to the transient electroluminescence induced by electrical tuning of QD and TI parameters. In the case of magnetic TIs, the polarization direction of the absorbed or emitted circularly polarized light is changed due to the level crossing.
All-electric spin modulator based on a two-dimensional topological insulator
Energy Technology Data Exchange (ETDEWEB)
Xiao, Xianbo; Ai, Guoping [School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China); Liu, Ying; Yang, Shengyuan A., E-mail: shengyuan-yang@sutd.edu.sg [Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372 (Singapore); Liu, Zhengfang [School of Science, East China Jiaotong University, Nanchang 330013 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081 (China)
2016-01-18
We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a non-magnetic material.
A General Theorem Relating the Bulk Topological Number to Edge States in Two-dimensional Insulators
Energy Technology Data Exchange (ETDEWEB)
Qi, Xiao-Liang; /Tsinghua U., Beijing /Stanford U., Phys. Dept.; Wu, Yong-Shi; /Utah U.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept. /Tsinghua U., Beijing
2010-01-15
We prove a general theorem on the relation between the bulk topological quantum number and the edge states in two dimensional insulators. It is shown that whenever there is a topological order in bulk, characterized by a non-vanishing Chern number, even if it is defined for a non-conserved quantity such as spin in the case of the spin Hall effect, one can always infer the existence of gapless edge states under certain twisted boundary conditions that allow tunneling between edges. This relation is robust against disorder and interactions, and it provides a unified topological classification of both the quantum (charge) Hall effect and the quantum spin Hall effect. In addition, it reconciles the apparent conflict between the stability of bulk topological order and the instability of gapless edge states in systems with open boundaries (as known happening in the spin Hall case). The consequences of time reversal invariance for bulk topological order and edge state dynamics are further studied in the present framework.
Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M =Cu ,Ag )
Ma, Yandong; Kou, Liangzhi; Dai, Ying; Heine, Thomas
2016-06-01
Two-dimensional (2D) topological insulators (TIs) are recently recognized states of quantum matter that are highly interesting for lower-power-consuming electronic devices owing to their nondissipative transport properties protected from backscattering. So far, only few 2D TIs, suffering from small bulk band gap (TIs in group-11 chalcogenide 2D crystals, M2Te (M =Cu ,Ag ) . The nontrivial topological states in C u2Te and A g2Te 2D crystals, identified by topological invariant and edge state calculations, exhibit sizeable bulk gaps of 78 and 150 meV, respectively, suggesting that they are candidates for room-temperature applications. Moreover, strain engineering leads to effective control of the nontrivial gaps of C u2Te and A g2Te , and a topological phase transition can be realized in C u2Te , while the nontrivial phase in A g2Te is stable against strain. Their dynamic and thermal stabilities are further confirmed by employing phonon calculations and ab initio molecular dynamic simulations.
Van Dyke, John S.; Morr, Dirk K.
2017-01-01
Using the nonequilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of charge changes between the topologically protected edge and bulk states and show that elastically and inelastically scattering defects that preserve the time-reversal symmetry of the TI lead to qualitatively different effects on the TI's local electronic structure and its transport properties. Moreover, we show that the recently predicted ability to create highly spin-polarized currents by breaking the time-reversal symmetry of the TI via magnetic defects [J. S. Van Dyke and D. K. Morr, Phys. Rev. B 93, 081401 (2016), 10.1103/PhysRevB.93.081401] is robust against the inclusion of a Rashba spin-orbit interaction and the effects of dephasing, and remains unaffected by changes over a wide range of the TI's parameters. We discuss how the sign of the induced spin currents changes under symmetry operations, such as reversal of bias and gate voltages, or spatial reflections. Finally, we show that the insight into the interplay between topology and symmetry of the magnetic defects can be employed for the creation of intriguing quantum phenomena, such as highly localized magnetic fields inside the TI.
Polarized heat current generated by quantum pumping in two-dimensional topological insulators
Ronetti, F.; Carrega, M.; Ferraro, D.; Rech, J.; Jonckheere, T.; Martin, T.; Sassetti, M.
2017-03-01
We consider the transport properties of a two-dimensional topological insulator in a double quantum point contact geometry in the presence of a time-dependent external field. In the proposed setup an external gate is placed above a single constriction and it couples only with electrons belonging to the top edge. This asymmetric configuration and the presence of an ac signal allow for a quantum pumping mechanism, which, in turn, can generate finite heat and charge currents in an unbiased device configuration. A microscopic model for coupling with the external time-dependent gate potential is developed and the induced finite heat and charge currents are investigated. We demonstrate that in the noninteracting case, heat flow is associated with a single spin component, due to the helical nature of the edge states, and therefore a finite and polarized heat current is obtained in this configuration. The presence of e -e interchannel interactions strongly affects the current signal, lowering the degree of polarization of the system. Finally, we also show that separate heat and charge flows can be achieved, varying the amplitude of the external gate.
Ochiai, Tetsuyuki
2016-01-01
We show the presence of Floquet-Weyl and Floquet-topological-insulator phases in a stacked two-dimensional ring-network lattice. The Weyl points in the three-dimensional Brillouin zone and Fermi-arc surface states are clearly demonstrated in the quasienergy spectrum of the system in the Weyl phase. In addition, chiral surface states coexist in this phase. The Floquet-topological-insulator phase is characterized by the winding number of two in the reflection matrices of the semi-infinite system and resulting two gapless surface states in the quasienergy g ap of the bulk. The phase diagram of the system is derived in the two-parameter space of hopping S-matrices among the rings. We also discuss a possible optical realization of the system together with the introduction of synthetic gauge fields.
Ochiai, Tetsuyuki
2016-10-01
We show the presence of Floquet-Weyl and Floquet-topological-insulator phases in a stacked two-dimensional ring-network lattice. The Weyl points in the three-dimensional Brillouin zone and Fermi-arc surface states are clearly demonstrated in the quasienergy spectrum of the system in the Floquet-Weyl phase. In addition, chiral surface states coexist in this phase. The Floquet-topological-insulator phase is characterized by the winding number of two in the reflection matrices of the semi-infinite system and resulting two gapless surface states in the quasienergy gap of the bulk. The phase diagram of the system is derived in the two-parameter space of hopping S-matrices among the rings. We also discuss a possible optical realization of the system together with the introduction of synthetic gauge fields.
Two-Dimensional Dirac Fermions in a Topological Insulator: Transport in the Quantum Limit
Energy Technology Data Exchange (ETDEWEB)
Analytis, J.G.; /SIMES, Stanford /SLAC /Stanford U., Geballe Lab /Stanford U., Appl. Phys. Dept.; McDonald, R.D.; /Los Alamos; Riggs, S.C.; /Natl. High Mag. Field Lab.; Chu, J.-H.; /SIMES, Stanford /SLAC /Stanford U., Geballe Lab /Stanford U., Appl. Phys. Dept.; Boebinger, G.S.; /Natl. High Mag. Field Lab.; Fisher, I.R.; /SIMES, Stanford /SLAC /Stanford U., Geballe Lab /Stanford U., Appl. Phys. Dept.
2011-08-12
Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi{sub 2}Se{sub 3} in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9 x 10{sup 16} cm{sup -3}, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the {nu} = 1 Landau level attained by a field of {approx} 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.
Zero-energy states bound to a magnetic {pi}-flux vortex in a two-dimensional topological insulator
Energy Technology Data Exchange (ETDEWEB)
Mesaros, Andrej, E-mail: andrej.mesaros@bc.edu [Department of Physics, Boston College, Chestnut Hill, MA 02467 (United States); Instituut-Lorentz for Theoretical Physics, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden (Netherlands); Slager, Robert-Jan; Zaanen, Jan; Juricic, Vladimir [Instituut-Lorentz for Theoretical Physics, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden (Netherlands)
2013-02-21
We show that the existence of a pair of zero-energy modes bound to a vortex carrying a {pi}-flux is a generic feature of the topologically non-trivial phase of the M-B model, which was introduced to describe the topological band insulator in HgTe quantum wells. We explicitly find the form of the zero-energy states of the corresponding Dirac equation, which contains a novel momentum-dependent mass term and describes a generic topological transition in a band insulator. The obtained modes are exponentially localized in the vortex-core, with the dependence of characteristic length on the parameters of the model matching the dependence extracted from a lattice version of the model. We consider in full generality the short-distance regularization of the vector potential of the vortex, and show that a particular choice yields the modes localized and simultaneously regular at the origin. Finally, we also discuss a realization of two-dimensional spin-charge separation through the vortex zero-modes.
Khalaf, E.; Skvortsov, M. A.; Ostrovsky, P. M.
2016-03-01
We study electron transport at the edge of a generic disordered two-dimensional topological insulator, where some channels are topologically protected from backscattering. Assuming the total number of channels is large, we consider the edge as a quasi-one-dimensional quantum wire and describe it in terms of a nonlinear sigma model with a topological term. Neglecting localization effects, we calculate the average distribution function of transmission probabilities as a function of the sample length. We mainly focus on the two experimentally relevant cases: a junction between two quantum Hall (QH) states with different filling factors (unitary class) and a relatively thick quantum well exhibiting quantum spin Hall (QSH) effect (symplectic class). In a QH sample, the presence of topologically protected modes leads to a strong suppression of diffusion in the other channels already at scales much shorter than the localization length. On the semiclassical level, this is accompanied by the formation of a gap in the spectrum of transmission probabilities close to unit transmission, thereby suppressing shot noise and conductance fluctuations. In the case of a QSH system, there is at most one topologically protected edge channel leading to weaker transport effects. In order to describe `topological' suppression of nearly perfect transparencies, we develop an exact mapping of the semiclassical limit of the one-dimensional sigma model onto a zero-dimensional sigma model of a different symmetry class, allowing us to identify the distribution of transmission probabilities with the average spectral density of a certain random-matrix ensemble. We extend our results to other symmetry classes with topologically protected edges in two dimensions.
Yang, Kesong
As a rapidly growing area of materials science, high-throughput (HT) computational materials design is playing a crucial role in accelerating the discovery and development of novel functional materials. In this presentation, I will first introduce the strategy of HT computational materials design, and take the HT discovery of topological insulators (TIs) as a practical example to show the usage of such an approach. Topological insulators are one of the most studied classes of novel materials because of their great potential for applications ranging from spintronics to quantum computers. Here I will show that, by defining a reliable and accessible descriptor, which represents the topological robustness or feasibility of the candidate, and by searching the quantum materials repository aflowlib.org, we have automatically discovered 28 TIs (some of them already known) in five different symmetry families. Next, I will talk about our recent research work on the HT computational design of the perovskite-based two-dimensional electron gas (2DEG) systems. The 2DEG formed on the perovskite oxide heterostructure (HS) has potential applications in next-generation nanoelectronic devices. In order to achieve practical implementation of the 2DEG in the device design, desired physical properties such as high charge carrier density and mobility are necessary. Here I show that, using the same strategy with the HT discovery of TIs, by introducing a series of combinatorial descriptors, we have successfully identified a series of candidate 2DEG systems based on the perovskite oxides. This work provides another exemplar of applying HT computational design approach for the discovery of advanced functional materials.
Chuang, Feng-Chuan; Hsu, Chia-Hsiu; Chou, Hsin-Lei; Crisostomo, Christian P.; Huang, Zhi-Quan; Wu, Shih-Yu; Kuo, Chien-Cheng; Yeh, Wang-Chi V.; Lin, Hsin; Bansil, Arun
2016-01-01
Two-dimensional (2D) topological insulators (TIs), which can be integrated into the modern silicon industry, are highly desirable for spintronics applications. Here, using first-principles electronic structure calculations, we show that the Au/Si(111)-√{3 } substrate can provide a platform for hosting 2D TIs obtained through the formation of surface alloys with a honeycomb pattern of adsorbed atoms. We systematically examined elements from groups III to VI of the periodic table at 2/3 monolayer coverage on Au/Si(111)-√{3 }, and found that In, Tl, Ge, and Sn adsorbates result in topologically nontrivial phases with band gaps varying from 0 to 50 meV. Our scanning tunneling microscopy and low-energy electron diffraction experiments confirm the presence of the honeycomb pattern when Bi atoms are deposited on Au/Si(111)-√{3 }, in accord with our theoretical predictions. Our findings pave the way for using surface alloys as a potential route for obtaining viable 2D TI platforms.
Topological defects in two-dimensional crystals
Chen, Yong; Qi, Wei-Kai
2008-01-01
By using topological current theory, we study the inner topological structure of the topological defects in two-dimensional (2D) crystal. We find that there are two elementary point defects topological current in two-dimensional crystal, one for dislocations and the other for disclinations. The topological quantization and evolution of topological defects in two-dimensional crystals are discussed. Finally, We compare our theory with Brownian-dynamics simulations in 2D Yukawa systems.
Two-dimensional topological photonic systems
Sun, Xiao-Chen; He, Cheng; Liu, Xiao-Ping; Lu, Ming-Hui; Zhu, Shi-Ning; Chen, Yan-Feng
2017-09-01
The topological phase of matter, originally proposed and first demonstrated in fermionic electronic systems, has drawn considerable research attention in the past decades due to its robust transport of edge states and its potential with respect to future quantum information, communication, and computation. Recently, searching for such a unique material phase in bosonic systems has become a hot research topic worldwide. So far, many bosonic topological models and methods for realizing them have been discovered in photonic systems, acoustic systems, mechanical systems, etc. These discoveries have certainly yielded vast opportunities in designing material phases and related properties in the topological domain. In this review, we first focus on some of the representative photonic topological models and employ the underlying Dirac model to analyze the edge states and geometric phase. On the basis of these models, three common types of two-dimensional topological photonic systems are discussed: 1) photonic quantum Hall effect with broken time-reversal symmetry; 2) photonic topological insulator and the associated pseudo-time-reversal symmetry-protected mechanism; 3) time/space periodically modulated photonic Floquet topological insulator. Finally, we provide a summary and extension of this emerging field, including a brief introduction to the Weyl point in three-dimensional systems.
Topology optimization of two-dimensional waveguides
DEFF Research Database (Denmark)
Jensen, Jakob Søndergaard; Sigmund, Ole
2003-01-01
In this work we use the method of topology optimization to design two-dimensional waveguides with low transmission loss.......In this work we use the method of topology optimization to design two-dimensional waveguides with low transmission loss....
Franz, Marcel
2013-01-01
Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was
TWO-DIMENSIONAL TOPOLOGY OF COSMOLOGICAL REIONIZATION
Energy Technology Data Exchange (ETDEWEB)
Wang, Yougang; Xu, Yidong; Chen, Xuelei [Key Laboratory of Computational Astrophysics, National Astronomical Observatories, Chinese Academy of Sciences, Beijing, 100012 China (China); Park, Changbom [School of Physics, Korea Institute for Advanced Study, 85 Hoegiro, Dongdaemun-gu, Seoul 130-722 (Korea, Republic of); Kim, Juhan, E-mail: wangyg@bao.ac.cn, E-mail: cbp@kias.re.kr [Center for Advanced Computation, Korea Institute for Advanced Study, 85 Hoegiro, Dongdaemun-gu, Seoul 130-722 (Korea, Republic of)
2015-11-20
We study the two-dimensional topology of the 21-cm differential brightness temperature for two hydrodynamic radiative transfer simulations and two semi-numerical models. In each model, we calculate the two-dimensional genus curve for the early, middle, and late epochs of reionization. It is found that the genus curve depends strongly on the ionized fraction of hydrogen in each model. The genus curves are significantly different for different reionization scenarios even when the ionized faction is the same. We find that the two-dimensional topology analysis method is a useful tool to constrain the reionization models. Our method can be applied to the future observations such as those of the Square Kilometre Array.
Two dimensional topology of cosmological reionization
Wang, Yougang; Xu, Yidong; Chen, Xuelei; Kim, Juhan
2015-01-01
We study the two-dimensional topology of the 21-cm differential brightness temperature for two hydrodynamic radiative transfer simulations and two semi-numerical models. In each model, we calculate the two dimensional genus curve for the early, middle and late epochs of reionization. It is found that the genus curve depends strongly on the ionized fraction of hydrogen in each model. The genus curves are significantly different for different reionization scenarios even when the ionized faction is the same. We find that the two-dimensional topology analysis method is a useful tool to constrain the reionization models. Our method can be applied to the future observations such as those of the Square Kilometer Array.
Topological states in two-dimensional hexagon lattice bilayers
Zhang, Ming-Ming; Xu, Lei; Zhang, Jun
2016-10-01
We investigate the topological states of the two-dimensional hexagon lattice bilayer. The system exhibits a quantum valley Hall (QVH) state when the interlayer interaction t⊥ is smaller than the nearest neighbor hopping energy t, and then translates to a trivial band insulator state when t⊥ / t > 1. Interestingly, the system is found to be a single-edge QVH state with t⊥ / t = 1. The topological phase transition also can be presented via changing bias voltage and sublattice potential in the system. The QVH states have different edge modes carrying valley current but no net charge current. The bias voltage and external electric field can be tuned easily in experiments, so the present results will provide potential application in valleytronics based on the two-dimensional hexagon lattice.
Yoshida, Tsuneya; Kawakami, Norio
2017-01-01
One of the remarkable interaction effects on topological insulators is the reduction of topological classification in free-fermion systems. We address this issue in a bilayer honeycomb lattice model by taking into account temperature effects on the reduction. Our analysis, based on the real-space dynamical mean-field theory, elucidates the following results. (i) Even when the reduction occurs, the winding number defined by the Green's function can take a nontrivial value at zero temperature. (ii) The winding number taking the nontrivial value becomes consistent with the absence of gapless edge modes due to Mott behaviors emerging only at the edges. (iii) Temperature effects can restore the gapless edge modes, provided that the energy scale of interactions is smaller than the bulk gap. In addition, we observe the topological edge Mott behavior only in some finite-temperature region.
Topological aspect of disclinations in two-dimensional crystals
Institute of Scientific and Technical Information of China (English)
Qi Wei-Kai; Zhu Tao; Chen Yong; Ren Ji-Rong
2009-01-01
By using topological current theory, this paper studies the inner topological structure of disclinations during the melting of two-dimensional systems. From two-dimensional elasticity theory, it finds that there are topological currents for topological defects in homogeneous equation. The evolution of disclinations is studied, and the branch conditions for generating, annihilating, crossing, splitting and merging of disclinations are given.
Strongly Correlated Topological Insulators
2016-02-03
Research Triangle Park , NC 27709-2211 Condensed Matter, Topological Phases of Matter REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S...Strongly Correlated Topological Insulators In the past year, the grant was used for work in the field of topological phases, with emphasis on finding...surface of topological insulators. In the past 3 years, we have started a new direction, that of fractional topological insulators. These are materials
Topological insulators and topological superconductors
Bernevig, Andrei B
2013-01-01
This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...
Topology in two-dimensional systems
Beukman, A.J.A.
2016-01-01
This thesis includes two research directions both aim to discover a building block for topological quantum computing. First, in Chapter 3, a novel setup is designed, built, and tested, that can electrostatically gate a material without endangering the materials pristine quality. The setup was design
Topology in two-dimensional systems
Beukman, A.J.A.
2016-01-01
This thesis includes two research directions both aim to discover a building block for topological quantum computing. First, in Chapter 3, a novel setup is designed, built, and tested, that can electrostatically gate a material without endangering the materials pristine quality. The setup was design
Topological insulators: Engineered heterostructures
Hesjedal, Thorsten; Chen, Yulin
2017-01-01
The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena. In particular, the coupling between topological insulators and antiferromagnets enables magnetic and electronic structural engineering.
Topological Insulators Dirac Equation in Condensed Matters
Shen, Shun-Qing
2012-01-01
Topological insulators are insulating in the bulk, but process metallic states around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, Topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field. This book is intended for researchers and graduate students working in the field of topological in...
Topology optimization of two-dimensional elastic wave barriers
DEFF Research Database (Denmark)
Van Hoorickx, C.; Sigmund, Ole; Schevenels, M.
2016-01-01
Topology optimization is a method that optimally distributes material in a given design domain. In this paper, topology optimization is used to design two-dimensional wave barriers embedded in an elastic halfspace. First, harmonic vibration sources are considered, and stiffened material is insert...
Kurilovich, P. D.; Kurilovich, V. D.; Burmistrov, I. S.
2016-10-01
We study indirect exchange interaction between magnetic impurities in the (001) CdTe/HgTe/CdTe symmetric quantum well. We consider low temperatures and the case of the chemical potential placed in the energy gap of the two-dimensional quasiparticle spectrum. We find that the indirect exchange interaction is suppressed exponentially with the distance between magnetic impurities. The presence of inversion asymmetry results in oscillations of the indirect exchange interaction with the distance and generates additional terms which are noninvariant under rotations in the (001) plane. The indirect exchange interaction matrix has complicated structure with some terms proportional to the sign of the energy gap.
Plasmonics in Topological Insulators
Directory of Open Access Journals (Sweden)
Yi-Ping Lai
2014-04-01
Full Text Available With strong spin-orbit coupling, topological insulators have an insulating bulk state, characterized by a band gap, and a conducting surface state, characterized by a Dirac cone. Plasmons in topological insulators show high frequency-tunability in the mid-infrared and terahertz spectral regions with transverse spin oscillations, also called “spin-plasmons”. This paper presents a discussion and review of the developments in this field from the fundamental theory of plasmons in bulk, thin-film, and surface-magnetized topological insulators to the techniques of plasmon excitation and future applications.
Multifarious topological quantum phase transitions in two-dimensional topological superconductors
Liu, Xiao-Ping; Zhou, Yuan; Wang, Yi-Fei; Gong, Chang-De
2016-06-01
We study the two-dimensional topological superconductors of spinless fermions in a checkerboard-lattice Chern-insulator model. With the short-range p-wave superconducting pairing, multifarious topological quantum phase transitions have been found and several phases with high Chern numbers have been observed. We have established a rich phase diagram for these topological superconducting states. A finite-size checkerboard-lattice cylinder with a harmonic trap potential has been further investigated. Based upon the self-consistent numerical calculations of the Bogoliubov-de Gennes equations, various phase transitions have also been identified at different regions of the system. Multiple pairs of Majorana fermions are found to be well-separated and localized at the phase boundaries between the phases characterized by different Chern numbers.
Multifarious topological quantum phase transitions in two-dimensional topological superconductors
Liu, Xiao-Ping; Zhou, Yuan; Wang, Yi-Fei; Gong, Chang-De
2016-01-01
We study the two-dimensional topological superconductors of spinless fermions in a checkerboard-lattice Chern-insulator model. With the short-range p-wave superconducting pairing, multifarious topological quantum phase transitions have been found and several phases with high Chern numbers have been observed. We have established a rich phase diagram for these topological superconducting states. A finite-size checkerboard-lattice cylinder with a harmonic trap potential has been further investigated. Based upon the self-consistent numerical calculations of the Bogoliubov-de Gennes equations, various phase transitions have also been identified at different regions of the system. Multiple pairs of Majorana fermions are found to be well-separated and localized at the phase boundaries between the phases characterized by different Chern numbers. PMID:27329219
Experimental evidence for a two-dimensional quantized Hall insulator
Hilke, M.; Shahar, D.; Song, S. H.; Tsui, D. C.; Xie, Y. H.; Monroe, Don
1998-10-01
The general theoretical definition of an insulator is a material in which the conductivity vanishes at the absolute zero of temperature. In classical insulators, such as materials with a band gap, vanishing conductivities lead to diverging resistivities. But other insulators can show more complex behaviour, particularly in the presence of a high magnetic field, where different components of the resistivity tensor can display different behaviours: the magnetoresistance diverges as the temperature approaches absolute zero, but the transverse (Hall) resistance remains finite. Such a system is known as a Hall insulator. Here we report experimental evidence for a quantized Hall insulator in a two-dimensional electron system-confined in a semiconductor quantum well. The Hall resistance is quantized in the quantum unit of resistance h/e2, where h is Planck's constant and e the electronic charge. At low fields, the sample reverts to being a normal Hall insulator.
Two-dimensionally confined topological edge states in photonic crystals
Barik, Sabyasachi; Miyake, Hirokazu; DeGottardi, Wade; Waks, Edo; Hafezi, Mohammad
2016-11-01
We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three-dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters.
Two-Dimensionally Confined Topological Edge States in Photonic Crystals
Barik, Sabyasachi; DeGottardi, Wade; Waks, Edo; Hafezi, Mohammad
2016-01-01
We present an all-dielectric photonic crystal structure that supports two-dimensionally confined helical topological edge states. The topological properties of the system are controlled by the crystal parameters. An interface between two regions of differing band topologies gives rise to topological edge states confined in a dielectric slab that propagate around sharp corners without backscattering. Three dimensional finite-difference time-domain calculations show these edges to be confined in the out-of-plane direction by total internal reflection. Such nanoscale photonic crystal architectures could enable strong interactions between photonic edge states and quantum emitters.
Topological Quantum Optics in Two-Dimensional Atomic Arrays
Perczel, J.; Borregaard, J.; Chang, D. E.; Pichler, H.; Yelin, S. F.; Zoller, P.; Lukin, M. D.
2017-07-01
We demonstrate that two-dimensional atomic emitter arrays with subwavelength spacing constitute topologically protected quantum optical systems where the photon propagation is robust against large imperfections while losses associated with free space emission are strongly suppressed. Breaking time-reversal symmetry with a magnetic field results in gapped photonic bands with nontrivial Chern numbers and topologically protected, long-lived edge states. Due to the inherent nonlinearity of constituent emitters, such systems provide a platform for exploring quantum optical analogs of interacting topological systems.
Photonic Floquet Topological Insulators
Rechtsman, Mikael C; Plotnik, Yonatan; Lumer, Yaakov; Nolte, Stefan; Segev, Mordechai; Szameit, Alexander
2012-01-01
The topological insulator is a fundamentally new phase of matter, with the striking property that the conduction of electrons occurs only on its surface, not within the bulk, and that conduction is topologically protected. Topological protection, the total lack of scattering of electron waves by disorder, is perhaps the most fascinating and technologically important aspect of this material: it provides robustness that is otherwise known only for superconductors. However, unlike superconductivity and the quantum Hall effect, which necessitate low temperatures or magnetic fields, the immunity to disorder of topological insulators occurs at room temperature and without any external magnetic field. For this reason, topological protection is predicted to have wide-ranging applications in fault-tolerant quantum computing and spintronics. Recently, a large theoretical effort has been directed towards bringing the concept into the domain of photonics: achieving topological protection of light at optical frequencies. ...
Sizable band gap in organometallic topological insulator
Derakhshan, V.; Ketabi, S. A.
2017-01-01
Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.
Topological insulators Dirac equation in condensed matter
Shen, Shun-Qing
2017-01-01
This new edition presents a unified description of these insulators from one to three dimensions based on the modified Dirac equation. It derives a series of solutions of the bound states near the boundary, and describes the current status of these solutions. Readers are introduced to topological invariants and their applications to a variety of systems from one-dimensional polyacetylene, to two-dimensional quantum spin Hall effect and p-wave superconductors, three-dimensional topological insulators and superconductors or superfluids, and topological Weyl semimetals, helping them to better understand this fascinating field. To reflect research advances in topological insulators, several parts of the book have been updated for the second edition, including: Spin-Triplet Superconductors, Superconductivity in Doped Topological Insulators, Detection of Majorana Fermions and so on. In particular, the book features a new chapter on Weyl semimetals, a topic that has attracted considerable attention and has already b...
Topological Invariants of Edge States for Periodic Two-Dimensional Models
Energy Technology Data Exchange (ETDEWEB)
Avila, Julio Cesar; Schulz-Baldes, Hermann, E-mail: schuba@mi.uni-erlangen.de; Villegas-Blas, Carlos [Instituto de Matematicas, UNAM (Mexico)
2013-06-15
Transfer matrix methods and intersection theory are used to calculate the bands of edge states for a wide class of periodic two-dimensional tight-binding models including a sublattice and spin degree of freedom. This allows to define topological invariants by considering the associated Bott-Maslov indices which can be easily calculated numerically. For time-reversal symmetric systems in the symplectic universality class this leads to a Z{sub 2} -invariant for the edge states. It is shown that the edge state invariants are related to Chern numbers of the bulk systems and also to (spin) edge currents, in the spirit of the theory of topological insulators.
Topological invariants of edge states for periodic two-dimensional models
Avila, Julio Cesar; Villegas-Blas, Carlos
2012-01-01
Transfer matrix methods and intersection theory are used to calculate the bands of edge states for a wide class of periodic two-dimensional tight-binding models including a sublattice and spin degree of freedom. This allows to define topological invariants by considering the associated Bott-Maslov indices which can be easily calculated numerically. For time-reversal symmetric systems in the symplectic universality class this leads to a Z_2-invariant for the edge states. It is shown that the edge state invariants are related to Chern numbers of the bulk systems and also to (spin) edge currents, in the spirit of the theory of topological insulators.
Topological defect motifs in two-dimensional Coulomb clusters
Radzvilavičius, A; 10.1088/0953-8984/23/38/385301
2012-01-01
The most energetically favourable arrangement of low-density electrons in an infinite two-dimensional plane is the ordered triangular Wigner lattice. However, in most instances of contemporary interest one deals instead with finite clusters of strongly interacting particles localized in potential traps, for example, in complex plasmas. In the current contribution we study distribution of topological defects in two-dimensional Coulomb clusters with parabolic lateral confinement. The minima hopping algorithm based on molecular dynamics is used to efficiently locate the ground- and low-energy metastable states, and their structure is analyzed by means of the Delaunay triangulation. The size, structure and distribution of geometry-induced lattice imperfections strongly depends on the system size and the energetic state. Besides isolated disclinations and dislocations, classification of defect motifs includes defect compounds --- grain boundaries, rosette defects, vacancies and interstitial particles. Proliferatio...
Observation of photonic anomalous Floquet topological insulators
Maczewsky, Lukas J.; Zeuner, Julia M.; Nolte, Stefan; Szameit, Alexander
2017-01-01
Topological insulators are a new class of materials that exhibit robust and scatter-free transport along their edges -- independently of the fine details of the system and of the edge -- due to topological protection. To classify the topological character of two-dimensional systems without additional symmetries, one commonly uses Chern numbers, as their sum computed from all bands below a specific bandgap is equal to the net number of chiral edge modes traversing this gap. However, this is strictly valid only in settings with static Hamiltonians. The Chern numbers do not give a full characterization of the topological properties of periodically driven systems. In our work, we implement a system where chiral edge modes exist although the Chern numbers of all bands are zero. We employ periodically driven photonic waveguide lattices and demonstrate topologically protected scatter-free edge transport in such anomalous Floquet topological insulators.
Two-dimensional chiral topological superconductivity in Shiba lattices
Li, Jian; Neupert, Titus; Wang, Zhijun; MacDonald, A. H.; Yazdani, A.; Bernevig, B. Andrei
2016-07-01
The chiral p-wave superconductor is the archetypal example of a state of matter that supports non-Abelian anyons, a highly desired type of exotic quasiparticle. With this, it is foundational for the distant goal of building a topological quantum computer. While some candidate materials for bulk chiral superconductors exist, they are subject of an ongoing debate about their actual paring state. Here we propose an alternative route to chiral superconductivity, consisting of the surface of an ordinary superconductor decorated with a two-dimensional lattice of magnetic impurities. We furthermore identify a promising experimental platform to realize this proposal.
Topological Insulator Realized with Piezoelectric Resonators
McHugh, S.
2016-07-01
We propose a realization of a two-dimensional topological insulator using an array of microwave piezoelectric resonators. The resonators are coupled electrically, but acoustically isolated. The inter-resonator electromagnetic coupling required to reproduce an effective mechanical topological insulator is found explicitly. Both the acoustic and electric response show the essential features of topological insulator, e.g., helical edge states. The helical edge states may be useful for engineering nonreciprocal electronic devices like isolators and circulators. These components do not often appear in the radios of modern mobile phones since they traditionally require bulky magnetic material. However, a nonreciprocal device based on piezoelectric resonators may meet the demands of phone manufacturers due to their small size, high-linearity, and ease of fabrication.
Transport Experiments on Topological Insulators
2016-08-16
UU UU UU 16-08-2016 15-Sep-2011 14-Oct-2014 Final Report: Transport Experiments on Topological Insulators The views, opinions and/or findings contained...Triangle Park, NC 27709-2211 Topological Insulators, Dirac Semimetals, Transport in magnetic field, High mobility REPORT DOCUMENTATION PAGE 11. SPONSOR...ABSTRACT Final Report: Transport Experiments on Topological Insulators Report Title The ARO-supported research focused on uncovering novel materials and
Detection of topological states in two-dimensional Dirac systems by the dynamic spin susceptibility
Nakamura, Masaaki; Tokuno, Akiyuki
2016-08-01
We discuss dynamic spin susceptibility (DSS) in two-dimensional (2D) Dirac electrons with spin-orbit interactions to characterize topological insulators. The imaginary part of the DSS appears as an absorption rate in response to a transverse ac magnetic field, just as in an electron spin resonance experiment for localized spin systems. We found that when the system is in a static magnetic field, the topological state can be identified by an anomalous resonant peak of the imaginary part of the DSS as a function of the frequency of the transverse magnetic field ω . In the absence of a static magnetic field, the imaginary part of the DSS becomes a continuous function of ω with a threshold frequency ωc. In this case, the topological and the trivial phases can also be distinguished by the values of ωc and by the line shapes. Thus the DSS is an experimentally observable physical quantity to characterize a topological insulator directly from bulk properties, without observing a topological transition.
Two Dimensional Heat Transfer around Penetrations in Multilayer Insulation
Johnson, Wesley L.; Kelly, Andrew O.; Jumper, Kevin M.
2012-01-01
The objective of this task was to quantify thermal losses involving integrating MLI into real life situations. Testing specifically focused on the effects of penetrations (including structural attachments, electrical conduit/feedthroughs, and fluid lines) through MLI. While there have been attempts at quantifying these losses both analytically and experimentally, none have included a thorough investigation of the methods and materials that could be used in such applications. To attempt to quantify the excess heat load coming into the system due to the integration losses, a calorimeter was designed to study two dimensional heat transfer through penetrated MLI. The test matrix was designed to take as many variables into account as was possible with the limited test duration and system size. The parameters varied were the attachment mechanism, the buffer material (for buffer attachment mechanisms only), the thickness of the buffer, and the penetration material. The work done under this task is an attempt to measure the parasitic heat loads and affected insulation areas produced by system integration, to model the parasitic loads, and from the model produce engineering equations to allow for the determination of parasitic heat loads in future applications. The methods of integration investigated were no integration, using a buffer to thermally isolate the strut from the MLI, and temperature matching the MLI on the strut. Several materials were investigated as a buffer material including aerogel blankets, aerogel bead packages, cryolite, and even an evacuated vacuum space (in essence a no buffer condition).
A natural topological insulator.
Gehring, P; Benia, H M; Weng, Y; Dinnebier, R; Ast, C R; Burghard, M; Kern, K
2013-03-13
The earth's crust and outer space are rich sources of technologically relevant materials which have found application in a wide range of fields. Well-established examples are diamond, one of the hardest known materials, or graphite as a suitable precursor of graphene. The ongoing drive to discover novel materials useful for (opto)electronic applications has recently drawn strong attention to topological insulators. Here, we report that Kawazulite, a mineral with the approximate composition Bi2(Te,Se)2(Se,S), represents a naturally occurring topological insulator whose electronic properties compete well with those of its synthetic counterparts. Kawazulite flakes with a thickness of a few tens of nanometers were prepared by mechanical exfoliation. They exhibit a low intrinsic bulk doping level and correspondingly a sizable mobility of surface state carriers of more than 1000 cm(2)/(V s) at low temperature. Based on these findings, further minerals which due to their minimized defect densities display even better electronic characteristics may be identified in the future.
Two-dimensional Fermi surfaces in Kondo insulator SmB₆.
Li, G; Xiang, Z; Yu, F; Asaba, T; Lawson, B; Cai, P; Tinsman, C; Berkley, A; Wolgast, S; Eo, Y S; Kim, Dae-Jeong; Kurdak, C; Allen, J W; Sun, K; Chen, X H; Wang, Y Y; Fisk, Z; Li, Lu
2014-12-05
In the Kondo insulator samarium hexaboride (SmB6), strong correlation and band hybridization lead to an insulating gap and a diverging resistance at low temperature. The resistance divergence ends at about 3 kelvin, a behavior that may arise from surface conductance. We used torque magnetometry to resolve the Fermi surface topology in this material. The observed oscillation patterns reveal two Fermi surfaces on the (100) surface plane and one Fermi surface on the (101) surface plane. The measured Fermi surface cross sections scale as the inverse cosine function of the magnetic field tilt angles, which demonstrates the two-dimensional nature of the conducting electronic states of SmB6. Copyright © 2014, American Association for the Advancement of Science.
Fermionic response from fractionalization in an insulating two-dimensional magnet
Nasu, J.; Knolle, J.; Kovrizhin, D. L.; Motome, Y.; Moessner, R.
2016-10-01
Conventionally ordered magnets possess bosonic elementary excitations, called magnons. By contrast, no magnetic insulators in more than one dimension are known whose excitations are not bosons but fermions. Theoretically, some quantum spin liquids (QSLs)--new topological phases that can occur when quantum fluctuations preclude an ordered state--are known to exhibit Majorana fermions as quasiparticles arising from fractionalization of spins. Alas, despite much searching, their experimental observation remains elusive. Here, we show that fermionic excitations are remarkably directly evident in experimental Raman scattering data across a broad energy and temperature range in the two-dimensional material α-RuCl3. This shows the importance of magnetic materials as hosts of Majorana fermions. In turn, this first systematic evaluation of the dynamics of a QSL at finite temperature emphasizes the role of excited states for detecting such exotic properties associated with otherwise hard-to-identify topological QSLs.
The birth of topological insulators.
Moore, Joel E
2010-03-11
Certain insulators have exotic metallic states on their surfaces. These states are formed by topological effects that also render the electrons travelling on such surfaces insensitive to scattering by impurities. Such topological insulators may provide new routes to generating novel phases and particles, possibly finding uses in technological applications in spintronics and quantum computing.
Zhu, Guo-Yi; Wang, Ziqiang; Zhang, Guang-Ming
2017-05-01
Motivated by the recent observations of nodeless superconductivity in the monolayer CuO2 grown on the Bi2Sr2CaCu2O8+δ substrates, we study the two-dimensional superconducting (SC) phases described by the two-dimensional t\\text-J model in proximity to an antiferromagnetic (AF) insulator. We found that i) the nodal d-wave SC state can be driven via a continuous transition into a nodeless d-wave pairing state by the proximity-induced AF field. ii) The energetically favorable pairing states in the strong field regime have extended s-wave symmetry and can be nodal or nodeless. iii) Between the pure d-wave and s-wave paired phases, there emerge two topologically distinct SC phases with (s+\\text{i}d) symmetry, i.e., the weak and strong pairing phases, and the weak pairing phase is found to be a Z 2 topological superconductor protected by valley symmetry, exhibiting robust gapless nonchiral edge modes. These findings strongly suggest that the high-T c superconductors in proximity to antiferromagnets can realize fully gapped symmetry-protected topological SC.
Emerging Trends in Topological Insulators and Topological Superconductors
Indian Academy of Sciences (India)
A M Jayannavar; Arijit Saha
2017-08-01
Topological insulators are new class of materials which arecharacterized by a bulk band gap like ordinary band insulatorsbut have protected conducting states on their edgesor surfaces. These states emerge due to the combination ofspin-orbit coupling and time reversal symmetry. Also, thesestates are insensitive to scattering by non-magnetic impurities.A two-dimensional topological insulator has one dimensionaledge states in which the spin-momentum locking ofthe electrons give rise to quantum spin Hall effect. A threedimensionaltopological insulator supports novel spin-polarized2D Dirac fermions on its surface. These topological insulatormaterials have been theoretically predicted and experimentallyobserved in a variety of 2D and 3D systems, includingHgTe quantum wells, BiSb alloys, and Bi2Te3, Bi2Se3 crystals.Moreover, proximity induced superconductivity in these systemscan lead to a state that supports zero energy Majoranafermions, and the phase is known as topological superconductors.In this article, the basic idea of topological insulatorsand topological superconductors are presented alongwith their experimental development.
Fault-tolerance in Two-dimensional Topological Systems
Anderson, Jonas T.
This thesis is a collection of ideas with the general goal of building, at least in the abstract, a local fault-tolerant quantum computer. The connection between quantum information and topology has proven to be an active area of research in several fields. The introduction of the toric code by Alexei Kitaev demonstrated the usefulness of topology for quantum memory and quantum computation. Many quantum codes used for quantum memory are modeled by spin systems on a lattice, with operators that extract syndrome information placed on vertices or faces of the lattice. It is natural to wonder whether the useful codes in such systems can be classified. This thesis presents work that leverages ideas from topology and graph theory to explore the space of such codes. Homological stabilizer codes are introduced and it is shown that, under a set of reasonable assumptions, any qubit homological stabilizer code is equivalent to either a toric code or a color code. Additionally, the toric code and the color code correspond to distinct classes of graphs. Many systems have been proposed as candidate quantum computers. It is very desirable to design quantum computing architectures with two-dimensional layouts and low complexity in parity-checking circuitry. Kitaev's surface codes provided the first example of codes satisfying this property. They provided a new route to fault tolerance with more modest overheads and thresholds approaching 1%. The recently discovered color codes share many properties with the surface codes, such as the ability to perform syndrome extraction locally in two dimensions. Some families of color codes admit a transversal implementation of the entire Clifford group. This work investigates color codes on the 4.8.8 lattice known as triangular codes. I develop a fault-tolerant error-correction strategy for these codes in which repeated syndrome measurements on this lattice generate a three-dimensional space-time combinatorial structure. I then develop an
Topological insulators in random potentials
Pieper, Andreas; Fehske, Holger
2016-01-01
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Green's function approaches. We show that bulk disorder refills the surface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder preserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TI's surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasibound dot states may appear.
Topological Insulators from Electronic Superstructures
Sugita, Yusuke; Motome, Yukitoshi
2016-07-01
The possibility of realizing topological insulators by the spontaneous formation of electronic superstructures is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a triangular lattice. Using the mean-field approximation, we show that the model exhibits several different types of charge-ordered insulators, where the charge disproportionation forms a honeycomb or kagome superstructure. We find that the charge-ordered insulators in the presence of strong spin-orbit coupling can be topological insulators showing quantized spin Hall conductivity. Their band gap is dependent on electron correlations as well as the spin-orbit coupling, and even vanishes while showing the massless Dirac dispersion at the transition to a trivial charge-ordered insulator. Our results suggest a new route to realize and control topological states of quantum matter by the interplay between the spin-orbit coupling and electron correlations.
Junction between surfaces of two topological insulators
Sen, Diptiman; Deb, Oindrila
2012-02-01
We study scattering from a line junction which separates the surfaces of two three-dimensional topological insulators; some aspects of this problem were recently studied in Takahashi and Murakami, Phys. Rev. Lett. 107, 166805 (2011). The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs; in the latter case, we find that the electrons must, in general, go into the two-dimensional interface separating the two topological insulators. We also study what happens if the two surfaces are at an angle φ with respect to each other. We find in this case that there are bound states which propagate along the line junction with a velocity and direction of spin which depend on the bending angle φ.
Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata
2015-12-01
The effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analysed theoretically. The thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions also has a significant impact on the transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction also determines the in-plane magnetic easy axis. The thermoelectric properties of nanoribbons with in-plane magnetic moments are compared to those of nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity in addition to the conventional one.
Disorder effects in correlated topological insulators
Hung, Hsiang-Hsuan; Barr, Aaron; Prodan, Emil; Fiete, Gregory A.
2016-12-01
Using exact diagonalization and quantum Monte Carlo calculations we investigate the effects of disorder on the phase diagram of both noninteracting and interacting models of two-dimensional topological insulators. In the fermion sign problem-free interacting models we study, electron-electron interactions are described by an on-site repulsive Hubbard interaction and disorder is included via the one-body hopping operators. In both the noninteracting and interacting models we make use of recent advances in highly accurate real-space numerical evaluation of topological invariants to compute phase boundaries and in the noninteracting models determine critical exponents of the transitions. We find different models exhibit distinct stability conditions of the topological phase with respect to interactions and disorder. We provide a general analytical theory that accurately predicts these trends.
Nonlocal Parity Order in the Two-Dimensional Mott Insulator
Fazzini, Serena; Becca, Federico; Montorsi, Arianna
2017-04-01
The Mott insulator is characterized by having small deviations around the (integer) average particle density n , with pairs with n -1 and n +1 particles forming bound states. In one dimension, the effect is captured by a nonzero value of a nonlocal "string" of parities, which instead vanishes in the superfluid phase where density fluctuations are large. Here, we investigate the interaction induced transition from the superfluid to the Mott insulator, in the paradigmatic Bose Hubbard model at n =1 . By means of quantum Monte Carlo simulations and finite size scaling analysis on L ×M ladders, we explore the behavior of "brane" parity operators from one dimension (i.e., M =1 and L →∞ ) to two dimensions (i.e., M →∞ and L →∞ ). We confirm the conjecture that, adopting a standard definition, their average value decays to zero in two dimensions also in the insulating phase, evaluating the scaling factor of the "perimeter law" [S. P. Rath et al., Ann. Phys. (Berlin) 334, 256 (2013), 10.1016/j.aop.2013.04.006]. Upon introducing a further phase in the brane parity, we show that its expectation value becomes nonzero in the insulator, while still vanishing at the transition to the superfluid phase. These quantities are directly accessible to experimental measures, thus providing an insightful signature of the Mott insulator.
Zhou, Jian; Jena, Puru
2017-02-01
While most of the two-dimensional (2D) topological crystalline insulators (TCIs) belong to group IV-VI narrow-band-gap semiconductors in a square lattice, in the present work we predict a TCI family based on transition metal intercalated compounds in a hexagonal lattice. First-principles calculations combined with a substrate-fixed globally optimal structural search technique show that a layer of Os prefers a uniform distribution between two graphene sheets. Band dispersion calculations reveal a Dirac point and a Dirac nodal ring near the Fermi level. The Dirac point is ascribed to the hybridization of e2 and e2* orbitals, and the Dirac ring is formed due to dispersion of s and e1* orbitals. Upon inclusion of spin-orbit coupling, these Dirac states open topologically nontrivial local band gaps, which are characterized by nonzero mirror Chern numbers. The quantum spin Hall effect is also observed by integrating the spin Berry curvature in the Brillouin zone. In contrast to the 2D group IV-VI TCIs whose band inversions at X and Y points are "locked" by C4 rotation symmetry, here the relative energy of two local band gaps can be manipulated by in-plane biaxial strains. Some other similar intercalation compounds are also shown to be topologically nontrivial. Our work extends the 2D TCI family into a hexagonal lattice composed of transition metals.
Experimental Realizations of Magnetic Topological Insulator and Topological Crystalline Insulator
Xu, Suyang
2013-03-01
Over the past few years the experimental research on three-dimensional topological insulators have emerged as one of the most rapidly developing fields in condensed matter physics. In this talk, we report on two new developments in the field: The first part is on the dynamic interplay between ferromagnetism and the Z2 topological insulator state (leading to a magnetic topological insulator). We present our spin-resolved photoemission and magnetic dichroic experiments on MBE grown films where a hedgehog-like spin texture is revealed on the magnetically ordered surface of Mn-Bi2Se3 revealing a Berry's phase gradient in energy-momentum space of the crystal. A chemically/electrically tunable Berry's phase switch is further demonstrated via the tuning of the spin groundstate in Mn-Bi2Se3 revealed in our data (Nature Physics 8, 616 (2012)). The second part of this talk describes our experimental observation of a new topological phase of matter, namely a topological crystalline insulator where space group symmetries replace the role of time-reversal symmetry in an otherwise Z2 topological insulator predicted in theory. We experimentally investigate the possibility of a mirror symmetry protected topological phase transition in the Pb1-xSnxTe alloy system, which has long been known to contain an even number of band inversions based on band theory. Our experimental results show that at a composition below the theoretically predicted band inversion, the system is fully gapped, whereas in the band-inverted regime, the surface exhibits even number of spin-polarized Dirac cone states revealing mirror-protected topological order (Nature Communications 3, 1192 (2012)) distinct from that observed in Z2 topological insulators. We discuss future experimental possibilities opened up by these new developments in topological insulators research. This work is in collaboration with M. Neupane, C. Liu, N. Alidoust, I. Belopolski, D. Qian, D.M. Zhang, A. Richardella, A. Marcinkova, Q
Superconductor-Insulator Transition in Random Two-Dimensional System
Kasuga, Masahiko; Kurihara, Susumu
2001-01-01
Effect of disorder in metallic thin film is examined as a possible mechanism of the Superconductor-Insulator (S-I) transition. The critical value of disorder corresponding to the transition point is found analytically by using Matsubara-Matsuda model and Green's function method.
Topological Insulators from Group Cohomology
Alexandradinata, A.; Wang, Zhijun; Bernevig, B. Andrei
2016-04-01
We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations; i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as "piecewise topological," in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discover include a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently proposed KHgSb material class), and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.
Topological Insulators from Group Cohomology
Directory of Open Access Journals (Sweden)
A. Alexandradinata
2016-04-01
Full Text Available We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations; i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as “piecewise topological,” in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discover include a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently proposed KHgSb material class, and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.
Aharonov–Bohm interference in topological insulator nanoribbons
Peng, Hailin
2009-12-13
Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.
Topological insulators fundamentals and perspectives
Ortmann, Frank; Valenzuela, Sergio O
2015-01-01
There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic
Transient Topology Optimization of Two-Dimensional Elastic Wave Propagation
DEFF Research Database (Denmark)
Matzen, René; Jensen, Jakob Søndergaard; Sigmund, Ole
2008-01-01
A tapering device coupling two monomodal waveguides is designed with the topology optimization method based on transient wave propagation. The gradient-based optimization technique is applied to predict the material distribution in the tapering area such that the squared output displacement (a...
The Classification of Two-Dimensional Extended Topological Field Theories
Schommer-Pries, Christopher J
2011-01-01
We provide a complete generators and relations presentation of the 2-dimensional extended unoriented and oriented bordism bicategories as symmetric monoidal bicategories. Thereby we classify these types of 2-dimensional extended topological field theories with arbitrary target bicategory. As an immediate corollary we obtain a concrete classification when the target is the symmetric monoidal bicategory of algebras, bimodules, and intertwiners over a fixed commutative ground ring. In the oriented case, such an extended topological field theory is equivalent to specifying a (non-commutative) separable symmetric Frobenius algebra. We review the notion of symmetric monoidal bicategory, giving also a precise notion of generators and relations in this context. We provide several supporting lemmas, one of which provides a simple list of criteria for determining when a morphism of symmetric monoidal bicategories is an equivalence. We introduce the symmetric monoidal bicategory of bordisms with structure, where the all...
Inversion-symmetric topological insulators
Hughes, Taylor L.; Prodan, Emil; Bernevig, B. Andrei
2011-06-01
We analyze translationally invariant insulators with inversion symmetry that fall outside the current established classification of topological insulators. These insulators exhibit no edge or surface modes in the energy spectrum and hence they are not edge metals when the Fermi level is in the bulk gap. However, they do exhibit protected modes in the entanglement spectrum localized on the cut between two entangled regions. Their entanglement entropy cannot be made to vanish adiabatically, and hence the insulators can be called topological. There is a direct connection between the inversion eigenvalues of the Hamiltonian band structure and the midgap states in the entanglement spectrum. The classification of protected entanglement levels is given by an integer N, which is the difference between the negative inversion eigenvalues at inversion symmetric points in the Brillouin zone, taken in sets of 2. When the Hamiltonian describes a Chern insulator or a nontrivial time-reversal invariant topological insulator, the entirety of the entanglement spectrum exhibits spectral flow. If the Chern number is zero for the former, or time reversal is broken in the latter, the entanglement spectrum does not have spectral flow, but, depending on the inversion eigenvalues, can still exhibit protected midgap bands similar to impurity bands in normal semiconductors. Although spectral flow is broken (implying the absence of real edge or surface modes in the original Hamiltonian), the midgap entanglement bands cannot be adiabatically removed, and the insulator is “topological.” We analyze the linear response of these insulators and provide proofs and examples of when the inversion eigenvalues determine a nontrivial charge polarization, a quantum Hall effect, an anisotropic three-dimensional (3D) quantum Hall effect, or a magnetoelectric polarization. In one dimension, we establish a link between the product of the inversion eigenvalues of all occupied bands at all inversion
Thermal metal-insulator transition in a helical topological superconductor
Fulga, I. C.; Akhmerov, A. R.; Tworzydło, J.; Béri, B.; Beenakker, C. W. J.
2012-01-01
Two-dimensional superconductors with time-reversal symmetry have a Z_2 topological invariant, that distinguishes phases with and without helical Majorana edge states. We study the topological phase transition in a class-DIII network model, and show that it is associated with a metal-insulator transition for the thermal conductance of the helical superconductor. The localization length diverges at the transition with critical exponent nu approx 2.0, about twice the known value in a chiral supe...
Topological Insulators at Room Temperature
Energy Technology Data Exchange (ETDEWEB)
Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-25
Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystals. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}T e{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, while Sb{sub 2}Se{sub 3} is not. In particular, Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3eV , suitable for room temperature applications. We present a simple and unified continuum model which captures the salient topological features of this class of materials. These topological insulators have robust surface states consisting of a single Dirac cone at the {Lambda} point.
Topology-driven magnetic quantum phase transition in topological insulators.
Zhang, Jinsong; Chang, Cui-Zu; Tang, Peizhe; Zhang, Zuocheng; Feng, Xiao; Li, Kang; Wang, Li-Li; Chen, Xi; Liu, Chaoxing; Duan, Wenhui; He, Ke; Xue, Qi-Kun; Ma, Xucun; Wang, Yayu
2013-03-29
The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.
Spintronics and pseudospintronics in graphene and topological insulators.
Pesin, Dmytro; MacDonald, Allan H
2012-04-23
The two-dimensional electron systems in graphene and in topological insulators are described by massless Dirac equations. Although the two systems have similar Hamiltonians, they are polar opposites in terms of spin-orbit coupling strength. We briefly review the status of efforts to achieve long spin-relaxation times in graphene with its weak spin-orbit coupling, and to achieve large current-induced spin polarizations in topological-insulator surface states that have strong spin-orbit coupling. We also comment on differences between the magnetic responses and dilute-moment coupling properties of the two systems, and on the pseudospin analogue of giant magnetoresistance in bilayer graphene.
Manipulating topological-insulator properties using quantum confinement
Kotulla, M.; Zülicke, U.
2017-07-01
Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have conductive surface or edge states. Topological materials show various unusual physical properties and are surmised to enable the creation of exotic Majorana-fermion quasiparticles. How the signatures of topological behavior evolve when the system size is reduced is interesting from both a fundamental and an application-oriented point of view, as such understanding may form the basis for tailoring systems to be in specific topological phases. This work considers the specific case of quantum-well confinement defining two-dimensional layers. Based on the effective-Hamiltonian description of bulk topological insulators, and using a harmonic-oscillator potential as an example for a softer-than-hard-wall confinement, we have studied the interplay of band inversion and size quantization. Our model system provides a useful platform for systematic study of the transition between the normal and topological phases, including the development of band inversion and the formation of massless-Dirac-fermion surface states. The effects of bare size quantization, two-dimensional-subband mixing, and electron-hole asymmetry are disentangled and their respective physical consequences elucidated.
Topological Insulator Nanowires and Nanoribbons
Kong, Desheng
2010-01-13
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.
Quantum Capacitance in Topological Insulators
Xiu, Faxian; Meyer, Nicholas; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Yong; Yu, Xinxin; Fedorov, Alexei V.; Zou, Jin; Wang, Kang L.
2012-01-01
Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature. PMID:22993694
Team for Research on Topological Insulators
Institute of Scientific and Technical Information of China (English)
2012-01-01
The team led by Prof. FANG Zhong at the CAS Institute of Physics （lOP） was awarded for their breakthrough researches in the field of topological insulators. Topological insulator is a new state of quantum matter different from conventional insulators or metals, of which human beings know very little. The team, consisting of theoretical, computational and experimental experts,
Z2 antiferromagnetic topological insulators with broken C4 symmetry
Bègue, Frédéric; Pujol, Pierre; Ramazashvili, Revaz
2017-04-01
A two-dimensional topological insulator may arise in a centrosymmetric commensurate Néel antiferromagnet (AF), where staggered magnetization breaks both the elementary translation and time reversal, but retains their product as a symmetry. Fang et al. [6] proposed an expression for a Z2 topological invariant to characterize such systems. Here, we show that this expression does not allow to detect all the existing phases if a certain lattice symmetry is lacking. We implement numerical techniques to diagnose topological phases of a toy Hamiltonian, and verify our results by computing the Chern numbers of degenerate bands, and also by explicitly constructing the edge states, thus illustrating the efficiency of the method.
Topological effects on the magnetoconductivity in topological insulators
Sacksteder, Vincent E.; Arnardottir, Kristin Bjorg; Kettemann, Stefan; Shelykh, Ivan A.
2014-12-01
Three-dimensional strong topological insulators (TIs) guarantee the existence of a two-dimensional (2-D) conducting surface state which completely covers the surface of the TI. The TI surface state necessarily wraps around the TI's top, bottom, and two sidewalls, and is therefore topologically distinct from ordinary 2-D electron gases (2-DEGs) which are planar. This has several consequences for the magnetoconductivity Δ σ , a frequently studied measure of weak antilocalization which is sensitive to the quantum coherence time τϕ and to temperature. We show that conduction on the TI sidewalls systematically reduces Δ σ , multiplying it by a factor which is always less than one and decreases in thicker samples. In addition, we present both an analytical formula and numerical results for the tilted-field magnetoconductivity which has been measured in several experiments. Lastly, we predict that as the temperature is reduced Δ σ will enter a wrapped regime where it is sensitive to diffusion processes which make one or more circuits around the TI. In this wrapped regime the magnetoconductivity's dependence on temperature, typically 1 /T2 in 2-DEGs, disappears. We present numerical and analytical predictions for the wrapped regime at both small and large field strengths. The wrapped regime and topological signatures discussed here should be visible in the same samples and at the same temperatures where the Altshuler-Aronov-Spivak (AAS) effect has already been observed, when the measurements are repeated with the magnetic field pointed perpendicularly to the TI's top face.
Pseudo-time-reversal symmetry and topological edge states in two-dimensional acoustic crystals
Mei, Jun
2016-09-02
We propose a simple two-dimensional acoustic crystal to realize topologically protected edge states for acoustic waves. The acoustic crystal is composed of a triangular array of core-shell cylinders embedded in a water host. By utilizing the point group symmetry of two doubly degenerate eigenstates at the Î
DEFF Research Database (Denmark)
Brøns, Morten; Hartnack, Johan Nicolai
1999-01-01
Streamline patterns and their bifurcations in two-dimensional incompressible flow are investigated from a topological point of view. The velocity field is expanded at a point in the fluid, and the expansion coefficients are considered as bifurcation parameters. A series of nonlinear coordinate...
DEFF Research Database (Denmark)
Brøns, Morten; Hartnack, Johan Nicolai
1998-01-01
Streamline patterns and their bifurcations in two-dimensional incompressible flow are investigated from a topological point of view. The velocity field is expanded at a point in the fluid, and the expansion coefficients are considered as bifurcation parameters. A series of non-linear coordinate...
Batalin-Vilkovisky algebras and two-dimensional topological field theories
Getzler, E
1994-01-01
Batalin-Vilkovisky algebras are a new type of algebraic structure on graded vector spaces, which first arose in the work of Batalin and Vilkovisky on gauge fixing in quantum field theory. In this article, we show that there is a natural structure of a Batalin-Vilkovisky algebra on the cohomology of a topological field theory in two dimensions. Lian and Zuckerman have constructed this Batalin-Vilkovisky structure, in the setting of topological chiral field theories, and shown that the structure is non-trivial in two-dimensional string theory. Our approach is to use algebraic topology, whereas their proofs have a more algebraic character.
Reconfigurable Microwave Photonic Topological Insulator
Goryachev, Maxim; Tobar, Michael E.
2016-12-01
Using full 3D finite-element simulation and underlining Hamiltonian models, we demonstrate reconfigurable photonic analogues of topological insulators on a regular lattice of tunable posts in a reentrant 3D lumped element-type system. The tunability allows a dynamical in situ change of media chirality and other properties via the alteration of the same parameter for all posts, and as a result, great flexibility in the choice of bulk-edge configurations. Additionally, one-way photon transport without an external magnetic field is demonstrated. The ideas are illustrated by using both full finite-element simulation as well as simplified harmonic oscillator models. Dynamical reconfigurability of the proposed systems paves the way to a class of systems that can be employed for random access, topological signal processing, and sensing.
Reconfigurable Microwave Photonic Topological Insulator
Goryachev, Maxim
2016-01-01
We demonstrate reconfigurable photonic analogues of topological insulators on a regular lattice of tunable posts in a re-entrant 3D lumped element type system. The tunability allows dynamical {\\it in-situ} change of media chirality and other properties via change of a single post parameter, and as a result, great flexibility in choice of bulk/edge configurations. Additionally, one way photon transport without external magnetic field is demonstrated. The ideas are illustrated by using both full finite element simulation as well as simplified harmonic oscillator models. Reconfigurability of the proposed systems paves the wave to a new class of systems that can be employed for random access, topological signal processing and sensing.
Topological Insulator Nanowires and Nanoribbons
Energy Technology Data Exchange (ETDEWEB)
Kong, D.S.
2010-06-02
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi{sub 2}Se{sub 3} material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi{sub 2}Se{sub 3} nanomaterials with a variety of morphologies. The synthesis of Bi{sub 2}Se{sub 3} nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular crosssection and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with {approx}1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.
Zeeman-Field-Tuned Topological Phase Transitions in a Two-Dimensional Class-DIII Superconductor.
Deng, W Y; Geng, H; Luo, W; Sheng, L; Xing, D Y
2016-01-01
We investigate the topological phase transitions in a two-dimensional time-reversal invariant topological superconductor in the presence of a Zeeman field. Based on the spin Chern number theory, we find that the system exhibits a number of topologically distinct phases with changing the out-of-plane component of the Zeeman field, including a quantum spin Hall-like phase, quantum anomalous Hall-like phases with total Chern number C = -2, -1, 1 and 2, and a topologically trivial superconductor phase. The BdG band gap closes at each boundary of the phase transitions. Furthermore, we demonstrate that the zero bias conductance provides clear transport signatures of the different topological phases, which are robust against symmetry-breaking perturbations.
Three-Dimensional All-Dielectric Photonic Topological Insulator
Slobozhanyuk, Alexey; Ni, Xiang; Smirnova, Daria; Kivshar, Yuri S; Khanikaev, Alexander B
2016-01-01
The discovery of two-dimensional topological photonic systems has transformed our views on electromagnetic propagation and scattering of classical waves, and a quest for similar states in three dimensions, known to exist in condensed matter systems, has been put forward. Here we demonstrate that symmetry protected three-dimensional topological states can be engineered in an all-dielectric platform with the electromagnetic duality between electric and magnetic fields ensured by the structure design. Magneto-electric coupling playing the role of a synthetic gauge field leads to a topological transition to an insulating regime with a complete three-dimensional photonic bandgap. An emergence of surface states with conical Dirac dispersion and spin-locking is unimpeded. Robust propagation of surface states along two-dimensional domain walls defined by the reversal of magneto-electric coupling is confirmed numerically by first principle studies. It is shown that the proposed system represents a table-top platform f...
Spintronics Based on Topological Insulators
Fan, Yabin; Wang, Kang L.
2016-10-01
Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.
Topological insulators: A romance with many dimensions
Manoharan, Hari C.
2010-07-01
Electric charges on the boundaries of certain insulators are programmed by topology to keep moving forward when they encounter an obstacle, rather than scattering backwards and increasing the resistance of the system. This is just one reason why topological insulators are one of the hottest topics in physics right now.
Tunable band topology reflected by fractional quantum Hall States in two-dimensional lattices.
Wang, Dong; Liu, Zhao; Cao, Junpeng; Fan, Heng
2013-11-01
Two-dimensional lattice models subjected to an external effective magnetic field can form nontrivial band topologies characterized by nonzero integer band Chern numbers. In this Letter, we investigate such a lattice model originating from the Hofstadter model and demonstrate that the band topology transitions can be realized by simply introducing tunable longer-range hopping. The rich phase diagram of band Chern numbers is obtained for the simple rational flux density and a classification of phases is presented. In the presence of interactions, the existence of fractional quantum Hall states in both |C| = 1 and |C| > 1 bands is confirmed, which can reflect the band topologies in different phases. In contrast, when our model reduces to a one-dimensional lattice, the ground states are crucially different from fractional quantum Hall states. Our results may provide insights into the study of new fractional quantum Hall states and experimental realizations of various topological phases in optical lattices.
Topological Aspect and Bifurcation of Disclination Lines in Two-Dimensional Liquid Crystals
Institute of Scientific and Technical Information of China (English)
YANG Guo-Hong; ZHANG Hui; DUAN Yi-Shi
2002-01-01
Using φ-mapping method and topological current theory, the topological structure and bifurcation ofdisclination lines in two-dimensional liquid crystals are studied. By introducing the strength density and the topologicalcurrent of many disclination lines, the total disclination strength is topologically quantized by the Hopf indices andBrouwer degrees at the singularities of the director field when the Jacobian determinant of director field does not vanish.When the Jacobian determinant vanishes, the origin, annihilation and bifurcation processes of disclination lines arestudied in the neighborhoods of the limit points and bifurcation points, respectively. The branch solutions at the limitpoint and the different directions of all branch curves at the bifurcation point are calculated with the conservation lawof the topological quantum numbers. It is pointed out that a disclination line with a higher strength is unstable and itwill evolve to the lower strength state through the bifurcation process.
Gigantic Surface Lifetime of an Intrinsic Topological Insulator
Neupane, Madhab; Xu, Su-Yang; Ishida, Yukiaki; Jia, Shuang; Fregoso, Benjamin M.; Liu, Chang; Belopolski, Ilya; Bian, Guang; Alidoust, Nasser; Durakiewicz, Tomasz; Galitski, Victor; Shin, Shik; Cava, Robert J.; Hasan, M. Zahid
2015-09-01
The interaction between light and novel two-dimensional electronic states holds promise to realize new fundamental physics and optical devices. Here, we use pump-probe photoemission spectroscopy to study the optically excited Dirac surface states in the bulk-insulating topological insulator Bi2Te2Se and reveal optical properties that are in sharp contrast to those of bulk-metallic topological insulators. We observe a gigantic optical lifetime exceeding 4 μ s (1 μ s =10-6 s ) for the surface states in Bi2Te2Se , whereas the lifetime in most topological insulators, such as Bi2Se3 , has been limited to a few picoseconds (1 ps =10-12 s ). Moreover, we discover a surface photovoltage, a shift of the chemical potential of the Dirac surface states, as large as 100 mV. Our results demonstrate a rare platform to study charge excitation and relaxation in energy and momentum space in a two-dimensional system.
Topological Insulators in α-Graphyne
Institute of Scientific and Technical Information of China (English)
WANG Guo-Xiang; HOU Jing-Min
2013-01-01
In this paper,we investigate topological phases of α-graphyne with tight-binding method.By calculating the topological invariant Z2 and the edge states,we identify topological insulators.We present the phase diagrams of α-graphyne with different filling fractions as a function of spin-orbit interaction and the nearest-neighbor hopping energy.We find there exist topological insulators in α-graphyne.We analyze and discuss the characteristics of topological phases of α-graphyne.
Excitonic pairing and insulating transition in two-dimensional semi-Dirac semimetals
Wang, Jing-Rong; Liu, Guo-Zhu; Zhang, Chang-Jin
2017-02-01
A sufficiently strong long-range Coulomb interaction can induce excitonic pairing in gapless Dirac semimetals, which generates a finite gap and drives the semimetal-insulator quantum phase transition. This phenomenon is in close analogy to dynamical chiral symmetry breaking in high-energy physics. In most realistic Dirac semimetals, including suspended graphene, the Coulomb interaction is too weak to open an excitonic gap. The Coulomb interaction plays a more important role at low energies in a two-dimensional semi-Dirac semimetal, in which the fermion spectrum is linear in one component of momenta and quadratic in the other, than a Dirac semimetal, and indeed leads to breakdown of Fermi liquid theory. We study dynamical excitonic gap generation in a two-dimensional semi-Dirac semimetal by solving the Dyson-Schwinger equation, and show that a moderately strong Coulomb interaction suffices to induce excitonic pairing. Additional short-range four-fermion coupling tends to promote excitonic pairing. Among the available semi-Dirac semimetals, we find that the TiO2/VO2 nanostructure provides a promising candidate for the realization of an excitonic insulator. We also apply the renormalization group method to analyze the strong coupling between the massless semi-Dirac fermions and the quantum critical fluctuation of the excitonic order parameter at the semimetal-insulator quantum critical point, and reveal non-Fermi liquid behaviors of semi-Dirac fermions.
Electrically Tunable Magnetism in Magnetic Topological Insulators
Energy Technology Data Exchange (ETDEWEB)
Wang, Jing; Lian, Biao; Zhang, Shou-Cheng
2015-07-14
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating magnetic topological insulators. The decrease of band inversion by the application of electric fields results in a reduction of magnetic susceptibility, and hence in the modification of magnetism. Remarkably, the electric field could even induce the magnetic quantum phase transition from ferromagnetism to paramagnetism. We further propose a transistor device in which the dissipationless charge transport of chiral edge states is controlled by an electric field. In particular, the field-controlled ferromagnetism in a magnetic topological insulator can be used for voltage based writing of magnetic random access memories in magnetic tunnel junctions. The simultaneous electrical control of magnetic order and chiral edge transport in such devices may lead to electronic and spintronic applications for topological insulators.
Amaral, Anderson M; de Araújo, Cid B
2015-01-01
We show how the phase profile of a distribution of topological charges (TC) of an optical vortex (OV) can be described by a potential analogous to the Coulomb's potential for a distribution of electric charges in two-dimensional electrostatics. From what we call the Topological Potential (TP), the properties of TC multipoles and a 2D radial distribution were analyzed. The TC multipoles have a transverse profile that is topologically stable under propagation and may be exploited in optical communications; on the other hand, the 2D distributions can be used to tune the transverse forces in optical tweezers. Considering the analogies with the electrostatics formalism, it is also expected that the TP allows the tailoring of OV for specific applications.
Non-Achievability of Metal-Insulator Transition in Two-Dimensional Systems
Institute of Scientific and Technical Information of China (English)
A. John Peter
2006-01-01
@@ We present a simple demonstration of the non feasibility of metal-insulator transition in an exactly two-dimensional (2D) system. The Hartree-Fock potential in the 3D system is suitably modified and presented for the 2D case.The many body effects are included in the screening function, and binding energies of a donor are obtained as a function of impurity concentration so as to find out the possible way leading metal-insulator transition in the 2D system. While solving for the binding energy for a shallow donor in an isolated well of a GaAs/Ga1-x Als As superlattice system within the effective mass approximation, it leads to unphysical results for higher concentrations.
He, Yuan-Yao; Wu, Han-Qing; Meng, Zi Yang; Lu, Zhong-Yi
2016-05-01
The aim of this series of two papers is to discuss topological invariants for interacting topological insulators (TIs). In the first paper (I), we provide a paradigm of efficient numerical evaluation scheme for topological invariants, in which we demystify the procedures and techniques employed in calculating Z2 invariant and spin Chern number via zero-frequency single-particle Green's function in quantum Monte Carlo (QMC) simulations. Here we introduce an interpolation process to overcome the ubiquitous finite-size effect, so that the calculated spin Chern number shows ideally quantized values. We also show that making use of symmetry properties of the underlying systems can greatly reduce the computational effort. To demonstrate the effectiveness of our numerical evaluation scheme, especially the interpolation process, for calculating topological invariants, we apply it on two independent two-dimensional models of interacting topological insulators. In the subsequent paper (II), we apply the scheme developed here to wider classes of models of interacting topological insulators, for which certain limitation of constructing topological invariant via single-particle Green's functions will be presented.
Analytical solutions of the two-dimensional Dirac equation for a topological channel intersection
Anglin, J. R.; Schulz, A.
2017-01-01
Numerical simulations in a tight-binding model have shown that an intersection of topologically protected one-dimensional chiral channels can function as a beam splitter for noninteracting fermions on a two-dimensional lattice [Qiao, Jung, and MacDonald, Nano Lett. 11, 3453 (2011), 10.1021/nl201941f; Qiao et al., Phys. Rev. Lett. 112, 206601 (2014), 10.1103/PhysRevLett.112.206601]. Here we confirm this result analytically in the corresponding continuum k .p model, by solving the associated two-dimensional Dirac equation, in the presence of a "checkerboard" potential that provides a right-angled intersection between two zero-line modes. The method by which we obtain our analytical solutions is systematic and potentially generalizable to similar problems involving intersections of one-dimensional systems.
Topological order, symmetry, and Hall response of two-dimensional spin-singlet superconductors
Moroz, Sergej; Prem, Abhinav; Gurarie, Victor; Radzihovsky, Leo
2017-01-01
Fully gapped two-dimensional superconductors coupled to dynamical electromagnetism are known to exhibit topological order. In this work, we develop a unified low-energy description for spin-singlet paired states by deriving topological Chern-Simons field theories for s -wave, d +i d , and chiral higher even-wave superconductors. These theories capture the quantum statistics and fusion rules of Bogoliubov quasiparticles and vortices and incorporate global continuous symmetries—specifically, spin rotation and conservation of magnetic flux—present in all singlet superconductors. For all such systems, we compute the Hall response for these symmetries and investigate the physics at the edge. In particular, the weakly coupled phase of a chiral d +i d chiral state has a spin Hall coefficient νs=2 and a vanishing Hall response for the magnetic flux symmetry. We argue that the latter is a generic result for two-dimensional superconductors with gapped photons, thereby demonstrating the absence of a spontaneous magnetic field in the ground state of chiral superconductors. It is also shown that the Chern-Simons theories of chiral spin-singlet superconductors derived here fall into Kitaev's 16-fold classification of topological superconductors.
Materials and Theory of Topological Insulators
2012-10-30
Jürgen Kübler, Shou-Cheng Zhang, Claudia Felser. Topological Insulators in Ternary Compounds with a Honeycomb Lattice, Physical Review Letters , (04...Patents Submitted Patents Awarded Awards Europhysics Prize, Awarded by the European Physical Society. (2010) Election to the American Academy of Arts...Felser, “Topological Insulators in Ternary Compounds with a Honeycomb Lattice”, Phys. Rev. Lett. 106, 156402, (2011). Awards Europhysics Prize
T-Duality and Topological Insulators
Mathai, Varghese
2015-01-01
It is well known that topological insulators are classified by a family of groups, which coincidentally also classifies D-brane charges on orientifolds in string theory. In this letter, we extend this correlation via a geometric analog of the real Fourier transform to obtain a novel duality of topological insulators that can be viewed as a condensed matter analog of T-duality in string theory.
Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-04-26
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.
Single atom anisotropic magnetoresistance on a topological insulator surface
Narayan, Awadhesh
2015-03-12
© 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi
Li, Shiqi; Sarachik, M. P.
2017-01-01
The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping ρ (T ) =ρ0exp[(TES/T ) 1 /2] , with TE S and 1 /ρ0 mapping onto each other if one applies a shift of the critical density nc reported earlier. With and without magnetic field, the parameters TE S and 1 /ρ0=σ0 exhibit scaling consistent with critical behavior approaching a metal-insulator transition.
Topological order, symmetry, and Hall response of two-dimensional spin-singlet superconductors
Moroz, Sergej; Gurarie, Victor; Radzihovsky, Leo
2016-01-01
Fully gapped two-dimensional superconductors coupled to dynamical electromagnetism are known to exhibit topological order. In this work, we develop a unified low-energy description for spin-singlet paired states by deriving topological Chern-Simons field theories for $s$-wave, $d+id$, and chiral higher even-wave superconductors. These theories capture the quantum statistics and fusion rules of low-energy excitations and incorporate global continuous symmetries - specifically, spin rotation and conservation of magnetic flux - present in all singlet superconductors. We compute the Hall response for these symmetries and investigate the physics at the edge. In particular, the weakly-coupled phase of a chiral state paired in the even $k^{\\text{th}}$ partial wave has a spin Hall coefficient $\
Fermionic Symmetry-Protected Topological Phase in a Two-Dimensional Hubbard Model
Chen, Cheng-Chien; Muechler, Lukas; Car, Roberto; Neupert, Titus; Maciejko, Joseph
2016-08-01
We study the two-dimensional (2D) Hubbard model using exact diagonalization for spin-1 /2 fermions on the triangular and honeycomb lattices decorated with a single hexagon per site. In certain parameter ranges, the Hubbard model maps to a quantum compass model on those lattices. On the triangular lattice, the compass model exhibits collinear stripe antiferromagnetism, implying d -density wave charge order in the original Hubbard model. On the honeycomb lattice, the compass model has a unique, quantum disordered ground state that transforms nontrivially under lattice reflection. The ground state of the Hubbard model on the decorated honeycomb lattice is thus a 2D fermionic symmetry-protected topological phase. This state—protected by time-reversal and reflection symmetries—cannot be connected adiabatically to a free-fermion topological phase.
Emergent topology and dynamical quantum phase transitions in two-dimensional closed quantum systems
Bhattacharya, Utso; Dutta, Amit
2017-07-01
Dynamical quantum phase transitions (DQPTs) manifested in the nonanalyticities in the temporal evolution of a closed quantum system generated by the time-independent final Hamiltonian, following a quench (or ramping) of a parameter of the Hamiltonian, is an emerging frontier of nonequilibrium quantum dynamics. We, here, introduce the notion of a dynamical topological order parameter (DTOP) that characterizes these DQPTs occurring in quenched (or ramped) two-dimensional closed quantum systems; this is quite a nontrivial generalization of the notion of DTOP introduced in Budich and Heyl [Phys. Rev. B 93, 085416 (2016), 10.1103/PhysRevB.93.085416] for one-dimensional situations. This DTOP is obtained from the "gauge-invariant" Pancharatnam phase extracted from the Loschmidt overlap, i.e., the modulus of the overlap between the initially prepared state and its time-evolved counterpart reached following a temporal evolution generated by the time-independent final Hamiltonian. This generic proposal is illustrated considering DQPTs occurring in the subsequent temporal evolution following a sudden quench of the staggered mass of the topological Haldane model on a hexagonal lattice where it stays fixed to zero or unity and makes a discontinuous jump between these two values at critical times at which DQPTs occur. What is remarkable is that while the topology of the equilibrium model is characterized by the Chern number, the emergent topology associated with the DQPTs is characterized by a generalized winding number.
Pseudo-time-reversal symmetry and topological edge states in two-dimensional acoustic crystals.
Mei, Jun; Chen, Zeguo; Wu, Ying
2016-09-02
We propose a simple two-dimensional acoustic crystal to realize topologically protected edge states for acoustic waves. The acoustic crystal is composed of a triangular array of core-shell cylinders embedded in a water host. By utilizing the point group symmetry of two doubly degenerate eigenstates at the Γ point, we can construct pseudo-time-reversal symmetry as well as pseudo-spin states in this classical system. We develop an effective Hamiltonian for the associated dispersion bands around the Brillouin zone center, and find the inherent link between the band inversion and the topological phase transition. With numerical simulations, we unambiguously demonstrate the unidirectional propagation of acoustic edge states along the interface between a topologically nontrivial acoustic crystal and a trivial one, and the robustness of the edge states against defects with sharp bends. Our work provides a new design paradigm for manipulating and transporting acoustic waves in a topologically protected manner. Technological applications and devices based on our design are expected in various frequency ranges of interest, spanning from infrasound to ultrasound.
Topology of nonsymmorphic crystalline insulators and superconductors
Shiozaki, Ken; Sato, Masatoshi; Gomi, Kiyonori
2016-05-01
Topological classification in our previous paper [K. Shiozaki and M. Sato, Phys. Rev. B 90, 165114 (2014), 10.1103/PhysRevB.90.165114] is extended to nonsymmorphic crystalline insulators and superconductors. Using the twisted equivariant K theory, we complete the classification of topological crystalline insulators and superconductors in the presence of additional order-two nonsymmorphic space-group symmetries. The order-two nonsymmorphic space groups include half-lattice translation with Z2 flip, glide, twofold screw, and their magnetic space groups. We find that the topological periodic table shows modulo-2 periodicity in the number of flipped coordinates under the order-two nonsymmorphic space group. It is pointed out that the nonsymmorphic space groups allow Z2 topological phases even in the absence of time-reversal and/or particle-hole symmetries. Furthermore, the coexistence of the nonsymmorphic space group with time-reversal and/or particle-hole symmetries provides novel Z4 topological phases, which have not been realized in ordinary topological insulators and superconductors. We present model Hamiltonians of these new topological phases and analytic expressions of the Z2 and Z4 topological invariants. The half-lattice translation with Z2 spin flip and glide symmetry are compatible with the existence of boundaries, leading to topological surface gapless modes protected by the order-two nonsymmorphic symmetries. We also discuss unique features of these gapless surface modes.
The topology of large-scale structure. V - Two-dimensional topology of sky maps
Gott, J. R., III; Mao, Shude; Park, Changbom; Lahav, Ofer
1992-01-01
A 2D algorithm is applied to observed sky maps and numerical simulations. It is found that when topology is studied on smoothing scales larger than the correlation length, the topology is approximately in agreement with the random phase formula for the 2D genus-threshold density relation, G2(nu) varies as nu(e) exp-nu-squared/2. Some samples show small 'meatball shifts' similar to those seen in corresponding 3D observational samples and similar to those produced by biasing in cold dark matter simulations. The observational results are thus consistent with the standard model in which the structure in the universe today has grown from small fluctuations caused by random quantum noise in the early universe.
Holographic Entanglement Renormalization of Topological Insulators
Wen, Xueda; Lopes, Pedro L S; Gu, Yingfei; Qi, Xiao-Liang; Ryu, Shinsei
2016-01-01
We study the real-space entanglement renormalization group flows of topological band insulators in (2+1) dimensions by using the continuum multi-scale entanglement renormalization ansatz (cMERA). Given the ground state of a Chern insulator, we construct and study its cMERA by paying attention, in particular, to how the bulk holographic geometry and the Berry curvature depend on the topological properties of the ground state. It is found that each state defined at different energy scale of cMERA carries a nonzero Berry flux, which is emanated from the UV layer of cMERA, and flows towards the IR. Hence, a topologically nontrivial UV state flows under the RG to an IR state, which is also topologically nontrivial. On the other hand, we found that there is an obstruction to construct the exact ground state of a topological insulator with a topologically trivial IR state. I.e., if we try to construct a cMERA for the ground state of a Chern insulator by taking a topologically trivial IR state, the resulting cMERA do...
Holographic entanglement renormalization of topological insulators
Wen, Xueda; Cho, Gil Young; Lopes, Pedro L. S.; Gu, Yingfei; Qi, Xiao-Liang; Ryu, Shinsei
2016-08-01
We study the real-space entanglement renormalization group flows of topological band insulators in (2+1) dimensions by using the continuum multiscale entanglement renormalization ansatz (cMERA). Given the ground state of a Chern insulator, we construct and study its cMERA by paying attention, in particular, to how the bulk holographic geometry and the Berry curvature depend on the topological properties of the ground state. It is found that each state defined at different energy scale of cMERA carries a nonzero Berry flux, which is emanated from the UV layer of cMERA, and flows towards the IR. Hence, a topologically nontrivial UV state flows under the renormalization group to an IR state, which is also topologically nontrivial. On the other hand, we found that there is an obstruction to construct the exact ground state of a topological insulator with a topologically trivial IR state. That is, if we try to construct a cMERA for the ground state of a Chern insulator by taking a topologically trivial IR state, the resulting cMERA does not faithfully reproduce the exact ground state at all length scales.
He, Yuan-Yao; Wu, Han-Qing; Meng, Zi Yang; Lu, Zhong-Yi
2016-05-01
Topological phase transitions in free fermion systems can be characterized by the closing of single-particle gap and the change in topological invariants. However, in the presence of electronic interactions, topological phase transitions can be more complicated. In paper I of this series [Phys. Rev. B 93, 195163 (2016), 10.1103/PhysRevB.93.195163], we have proposed an efficient scheme to evaluate the topological invariants based on the single-particle Green's function formalism. Here, in paper II, we demonstrate several interaction-driven topological phase transitions (TPTs) in two-dimensional (2D) interacting topological insulators (TIs) via large-scale quantum Monte Carlo (QMC) simulations, based on the scheme of evaluating topological invariants presented in paper I. Across these transitions, the defining symmetries of the TIs have been neither explicitly nor spontaneously broken. In the first two models, the topological invariants calculated from the Green's function formalism succeed in characterizing the topologically distinct phases and identifying interaction-driven TPTs. However, in the other two models, we find that the single-particle gap does not close and the topological invariants constructed from the single-particle Green's function acquire no change across the TPTs. Unexpected breakdown of the Green's function formalism in constructing the topological invariants is thus discovered. We thence classify the topological phase transitions in interacting TIs into two categories in practical computation: Those that have noninteracting correspondence can be characterized successfully by the topological invariants constructed from the Green's functions, while for the others that do not have noninteracting correspondence, the Green's function formalism experiences a breakdown, but more interesting and exciting phenomena, such as emergent collective critical modes at the transition, arise. Discussion on the success and breakdown of topological invariants
Two-dimensional spin liquids with Z2 topological order in an array of quantum wires
Patel, Aavishkar A.; Chowdhury, Debanjan
2016-11-01
Insulating Z2 spin liquids are a phase of matter with bulk anyonic quasiparticle excitations and ground-state degeneracies on manifolds with nontrivial topology. We construct a time-reversal symmetric Z2 spin liquid in two spatial dimensions using an array of quantum wires. We identify the anyons as kinks in the appropriate Luttinger-liquid description, compute their mutual statistics, and construct local operators that transport these quasiparticles. We also present a construction of a fractionalized Fermi liquid (FL*) by coupling the spin sector of the Z2 spin liquid to a Fermi liquid via a Kondo-like coupling.
Dynamical Gap Generation in Topological Insulators
Cea, Paolo
2016-01-01
We developed a quantum field theoretical description for the surface states of three-dimensional topological insulators. Within the relativistic quantum field theory formulation, we investigated the dynamics of low-lying surface states in an applied transverse magnetic field. We argued that, by taking into account quantum fluctuations, in three-dimensional topological insulators there is dynamical generation of a gap by a rearrangement of the Dirac sea. By comparing with available experimental data we found that our theoretical results allowed a consistent and coherent description of the Landau level spectrum of the surface low-lying excitations. Finally, we showed that the recently detected zero-Hall plateau at the charge neutral point could be accounted for by chiral edge states residing at the magnetic domain boundaries between the top and bottom surfaces of the three-dimensional topological insulator.
The winding road to topological insulators
Mele, Eugene J.
2015-12-01
This note gives a brief discussion of the discovery of topological insulators from a consideration of the low energy properties of single layer graphene. Topological band theoretic classification of insulating states in two and three-dimensions and experimental realizations are briefly discussed. Note to readers: This is a short summary of a talk that was given at the Nobel Symposium ‘New Forms of Matter: Topological Insulators and Superconductors’ held in Stockholm in June 2014. The talk was in the spirit of an overview talk but focusing on the background and early history of the field rather than reviewing the substantial (and growing) technical literature on the subject. Readers interested in technical details will surely be disappointed and should read no further, but others may be interested in some of the developments recounted here.
Optical Manipulation and Detection of Emergent Phenomena in Topological Insulators
Energy Technology Data Exchange (ETDEWEB)
Gedik, Nuh [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
2017-02-17
The three-dimensional topological insulator (TI) is a new quantum phase of matter that exhibits quantum-Hall-like properties, even in the absence of an external magnetic field. These materials are insulators in the bulk but have a topologically protected conducting state at the surface. Charge carriers on these surface states behave like a two-dimensional gas of massless helical Dirac fermions for which the spin is ideally locked perpendicular to the momentum. The purpose of this project is to probe the unique collective electronic behaviors of topological insulators by developing and using advanced time resolved spectroscopic techniques with state-of-the-art temporal and spatial resolutions. The nature of these materials requires development of specialized ultrafast techniques (such as time resolved ARPES that also has spin detection capability, ultrafast electron diffraction that has sub-100 fs time resolution and THz magneto-spectroscopy). The focus of this report is to detail our achievements in terms of establishing state of the art experimental facilities. Below, we will describe achievements under this award for the entire duration of five years. We will focus on detailing the development of ultrafast technqiues here. The details of the science that was done with these technqiues can be found in the publications referencing this grant.
Ma, Yandong; Kou, Liangzhi; Li, Xiao; Dai, Ying; Heine, Thomas
2016-01-01
So far, several transition metal dichalcogenide (TMDC)-based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first principles calculations, we propose a class of stable 2D TMDCs of composition MX2(M =Mo ,W ;X =S ,Se ,Te ) with a hexagonal lattice. They are all in the same stability range as other 2D TMDC allotropes that have been demonstrated experimentally, and they are identified to be practical 2D TIs with large band gaps ranging from 41 to 198 meV, making them suitable for applications at room temperature. Besides, in contrast to tetragonal 2D TMDCs, their hexagonal lattice will greatly facilitate the integration of theses novel TI state van der Waals crystals with other hexagonal or honeycomb materials and thus provide a route for 2D material-based devices for wider nanoelectronic and spintronic applications. The nontrivial band gaps of both WS e2 and WT e2 2D crystals are 198 meV, which are larger than that in any previously reported TMDC-based TIs. These large band gaps entirely stem from the strong spin orbit coupling strength within the d orbitals of Mo/W atoms near the Fermi level. Our findings broaden the scientific and technological impact of both 2D TIs and TMDCs.
Magnetic-proximity-induced magnetoresistance on topological insulators
Chiba, Takahiro; Takahashi, Saburo; Bauer, Gerrit E. W.
2017-03-01
We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (TIs) that are capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and the spin Hall MR. The in-plane MR vanishes identically for nonmagnetic disorder, while out-of-plane magnetizations cause a large MR ratio. On the other hand, we do find an in-plane MR and planar Hall effect in the presence of magnetic disorder aligned with the FI magnetization. Our results may help us understand recent transport measurements on TI |FI systems.
An, Taeyang; Cha, Min-Chul
2013-03-01
We study the superfluid-insulator quantum phase transition in a disordered two-dimensional quantum rotor model with random on-site interactions in the presence of particle-hole symmetry. Via worm-algorithm Monte Carlo calculations of superfluid density and compressibility, we find the dynamical critical exponent z ~ 1 . 13 (2) and the correlation length critical exponent 1 / ν ~ 1 . 1 (1) . These exponents suggest that the insulating phase is a incompressible Mott glass rather than a Bose glass.
Fractional charge and spin states in topological insulator constrictions
Klinovaja, Jelena; Loss, Daniel
2015-09-01
We theoretically investigate the properties of two-dimensional topological insulator constrictions both in the integer and fractional regimes. In the presence of a perpendicular magnetic field, the constriction functions as a spin filter with near-perfect efficiency and can be switched by electric fields only. Domain walls between different topological phases can be created in the constriction as an interface between tunneling, magnetic fields, charge density wave, or electron-electron interaction dominated regions. These domain walls host non-Abelian bound states with fractional charge and spin and result in degenerate ground states with parafermions. If a proximity gap is induced bound states give rise to an exotic Josephson current with 8 π periodicity.
High-Dimensional Topological Insulators with Quaternionic Analytic Landau Levels
Li, Yi; Wu, Congjun
2013-05-01
We study the three-dimensional topological insulators in the continuum by coupling spin-1/2 fermions to the Aharonov-Casher SU(2) gauge field. They exhibit flat Landau levels in which orbital angular momentum and spin are coupled with a fixed helicity. The three-dimensional lowest Landau level wave functions exhibit the quaternionic analyticity as a generalization of the complex analyticity of the two-dimensional case. Each Landau level contributes one branch of gapless helical Dirac modes to the surface spectra, whose topological properties belong to the Z2 class. The flat Landau levels can be generalized to an arbitrary dimension. Interaction effects and experimental realizations are also studied.
Optoelectronic devices, plasmonics, and photonics with topological insulators
Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.
2017-03-01
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.
Experimental investigation of topological insulators and superconductors
Pan, Yu
2016-01-01
Topological insulators are characterized by a fully gapped bulk and gapless surface states. They have ignited tremendous research activities in the field of condensed matter physics in recent years because of their theoretical research value for novel quantum phenomena and potential practical
Long-lived two-dimensional triplet magnetoexcitons in a Hall insulator
Kulik, L. V.; Gorbunov, A. V.; Zhuravlev, A. S.; Timofeev, V. B.; Kukushkin, I. V.
2016-03-01
An experimental technique is developed to perform photoexcitation of an ensemble of translationinvariant triplet excitons, to manipulate this ensemble, and to detect the properties of its components. In particular, the influence of temperature on the radiationless decay during the relaxation of an exciton spin into the ground state of a Hall insulator at a filling factor ν = 2 is studied. The generation of photoexcited electrons and holes is controlled using photoinduced resonance reflection spectra, which makes it possible to estimate the density of light-generated electron-hole pairs and to independently control the self-consistent generation of electrons at the first Landau level and holes (vacancies) at the ground (zero) cyclotron electronic level. The existence of triplet excitons is established from inelastic light scattering spectra, which are used to determine the singlet-triplet exciton splitting. The lifetimes of triplet excitons, which are closely related to the relaxation time of an electron spin, are extremely long: they reach 100 μs in perfect GaAs/AlGaAs heterostructures with a high mobility of two-dimensional electrons at low temperatures. These long spin relaxation times are qualitatively explained, and the expected collective behavior of high-density triplet magnetoexcitons at sufficiently low temperatures, which is related to their Bose nature, is discussed.
A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm
Institute of Scientific and Technical Information of China (English)
TANG Hai-Xia; ZUO Yu-Hua; YU Jin-Zhong; WANG Qi-Ming
2006-01-01
@@ A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator (SOI) substrate is designed by the three-dimensional plane wave expansion method.
DEFF Research Database (Denmark)
Xiao, Sanshui; Qiu, M.
2007-01-01
Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...
Topological crystalline insulator SnTe nanoribbons
Dahal, Bishnu R.; Dulal, Rajendra P.; Pegg, Ian L.; Philip, John
2017-03-01
Topological crystalline insulators are systems in which a band inversion that is protected by crystalline mirror symmetry gives rise to nontrivial topological surface states. SnTe is a topological crystalline insulator. It exhibits p-type conductivity due to Sn vacancies and Te antisites, which leads to high carrier density in the bulk. Thus growth of high quality SnTe is a prerequisite for understanding the topological crystalline insulating behavior. We have grown SnTe nanoribbons using a solution method. The width of the SnTe ribbons varies from 500 nm to 2 μm. They exhibit rock salt crystal structure with a lattice parameter of 6.32 Å. The solution method that we have adapted uses low temperature, so the Sn vacancies can be controlled. The solution grown SnTe nanoribbons exhibit strong semiconducting behavior with an activation energy of 240 meV. This activation energy matches with the calculated band gap for SnTe with a lattice parameter of 6.32 Å, which is higher than that reported for bulk SnTe. The higher activation energy makes the thermal excitation of bulk charges very difficult on the surface. As a result, the topological surfaces will be free from the disturbance caused by the thermal excitations
Topological insulator-based energy efficient devices
Chen, Yong P.
2012-06-01
Topological insulators (TI) have emerged as a new class of quantum materials with many novel and unusual properties. In this article, we will give a brief review of the key electronic properties of topological insulators, including the signatures for the unusual electronic transport properties of their characteristic topological surface states (TSS). We will then discuss how these novel properties and physics may be utilized for TI-based energy efficient devices, such as lowpower- consumption electronics and high performance thermo-electrics. Furthermore, going beyond conventional singleparticle, charge-based transport, to utilize coherent many-body coherent ground states such as excitonic condensates (EC), new and intriguing functionalities previously unexplored in electronic and energy devices may be realized with the potential to dramatically improve the energy efficiency.
Optical probing of the metal-to-insulator transition in a two-dimensional high-mobility electron gas
Energy Technology Data Exchange (ETDEWEB)
Dionigi, F; Rossella, F; Bellani, V [Dipartimento di Fisica ' A Volta' and CNISM, Universita degli Studi di Pavia, 27100 Pavia (Italy); Amado, M [GISC and Departamento de Fisica de Materiales, Universidad Complutense, 28040 Madrid (Spain); Diez, E [Laboratorio de Bajas Temperaturas, Universidad de Salamanca, 37008 Salamanca (Spain); Kowalik, K [Laboratoire National des Champs Magnetiques Intenses, CNRS, 38042 Grenoble (France); Biasiol, G [Istituto Officina dei Materiali CNR, Laboratorio TASC, 34149 Trieste (Italy); Sorba, L, E-mail: vittorio.bellani@unipv.it [NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, 56126 Pisa (Italy)
2011-06-15
We study the quantum Hall liquid and the metal-insulator transition in a high-mobility two-dimensional electron gas, by means of photoluminescence and magnetotransport measurements. In the integer and fractional regime at {nu}>1/3, by analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above {nu}=1/3, the system undergoes metal-to-insulator transition, and in the insulating phase the dispersion becomes linear with evidence of an increased renormalized mass.
Zhou, Liujiang; Shi, Wujun; Sun, Yan; Shao, Bin; Felser, Claudia; Yan, Binghai; Frauenheim, Thomas
2016-09-01
Quantum spin Hall (QSH) insulates exist in special two-dimensional (2D) semiconductors, possessing the quantized spin-Hall conductance that are topologically protected from backscattering. Based on the first-principles calculations, we predict a novel family of QSH insulators in 2D tantalum carbide halides TaCX (X = Cl, Br, and I) with unique rectangular lattice and large direct energy gaps. The mechanism for 2D QSH effect originates from an intrinsic d-d band inversion in the process of chemical bonding. Further, stain and intrinsic electric field can be used to tune the electronic structure and enhance the energy gap. TaCX nanoribbon, which has the single-Dirac-cone edge states crossing the bulk band gap, exhibits a linear dispersion with a high Fermi velocity comparable to that of graphene. These 2D materials with considerable nontrivial gaps promise great application potential in the new generation of dissipationless electronics and spintronics.
Topological mirror insulators in one dimension
Lau, Alexander; van den Brink, Jeroen; Ortix, Carmine
2016-10-01
We demonstrate the existence of topological insulators in one dimension (1D) protected by mirror and time-reversal symmetries. They are characterized by a nontrivial Z2 topological invariant defined in terms of the "partial" polarizations, which we show to be quantized in the presence of a 1D mirror point. The topological invariant determines the generic presence or absence of integer boundary charges at the mirror-symmetric boundaries of the system. We check our findings against spin-orbit coupled Aubry-André-Harper models that can be realized, e.g., in cold-atomic Fermi gases loaded in one-dimensional optical lattices or in density- and Rashba spin-orbit-modulated semiconductor nanowires. In this setup, in-gap end-mode Kramers doublets appearing in the topologically nontrivial state effectively constitute a double-quantum dot with spin-orbit coupling.
Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon
Das Sarma, S.; Hwang, E. H.
2014-06-01
Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l (n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a
Topological phases of a three-dimensional topological insulator with structure inversion asymmetry
Guo, Xiaoyong; Wang, Zaijun; Zheng, Qiang; Peng, Jie
2015-11-01
We investigate the topological phases of a three-dimensional (3D) topological insulator (TI) without the top-bottom inversion symmetry. We calculate the momentum depended spin Chern number to extract the phase diagram. Various phases are found and we address the dependence of phase boundaries on the strength of inversion asymmetry. Opposite to the quasi-two-dimensional thin film TI, in our 3D system the TI state is stabilized by the structure inversion asymmetry (SIA). With a strong SIA the 3D TI phase can exist even under a large Zeeman field. In a tight-binding form, the surface modes are discussed to confirm with the phase diagram. Particularly we find that the SIA cannot destroy the surface states but open a gap on its spectrum.
Optical Properties of Topological Insulator Bragg Gratings
Crosse, J A
2015-01-01
Using the transfer matrix formalism, we study the transmission properties of a Bragg grating constructed from a layered axionic material. Such a material can be realized by a topological insulator subject to a time-symmetry breaking perturbation, such as an external magnetic field or surface magnetic impurities. Whilst the reflective properties of the structure are only negligibly changed by the presence of the axionic material, the grating induces Faraday and Kerr rotations in the transmitted and reflected light, respectively. These rotations are proportional to the number of layers and the strength of the time-symmetry breaking perturbation. In areas of low reflectivity the rotation angle of TE polarization decreases with increasing incidence angle while the TM polarization increases with increasing incidence angle with the converse occurring in areas of high reflectivity. The formalism and results will be useful in the development of optical and photonic devices based on topological insulators, devices whi...
Modification of electrical properties of topological insulators
Energy Technology Data Exchange (ETDEWEB)
Sharma, Peter Anand
2017-08-29
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Topological insulator in a helicoidal magnetization field
Stagraczyński, S.; Chotorlishvili, L.; Dugaev, V. K.; Jia, C.-L.; Ernst, A.; Komnik, A.; Berakdar, J.
2016-11-01
A key feature of topological insulators is the robustness of the electron energy spectrum. At a surface of a topological insulator, the Dirac point is protected by the characteristic symmetry of the system. The breaking of the symmetry opens a gap in the energy spectrum. Therefore, topological insulators are very sensitive to magnetic fields, which can open a gap in the electronic spectrum. Concerning "internal" magnetic effects, for example, the situation with doped magnetic impurities, is not trivial. A single magnetic impurity is not enough to open the band gap, while in the case of a ferromagnetic chain of deposited magnetic impurities the Dirac point is lifted. However, a much more interesting case is when localized magnetic impurities form a chiral spin order. Our first principle density functional theory calculations have shown that this is the case for Fe deposited on the surface of a Bi2Se3 topological insulator. But not only magnetic impurities can form a chiral helicoidal spin texture. An alternative way is to use chiral multiferroics (prototype material is LiCu2O2 ) that induce a proximity effect. The theoretical approach we present here is valid for both cases. We observed that opposite to a ferromagnetically ordered case, a chiral spin order does not destroy the Dirac point. We also observed that the energy gap appears at the edges of the new Brillouin zone. Another interesting result concerns the spin dynamics. We derived an equation for the spin density dynamics with a spin current and relaxation terms. We have shown that the motion of the conductance electron generates a magnetic torque and exerts a certain force on the helicoidal texture.
Inelastic Electron Tunneling Spectroscopy for Topological Insulators
She, Jian-Huang; Fransson, Jonas; Bishop, A. R.; Balatsky, Alexander V.
2013-01-01
Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scattering is shown to significantly modify the Dirac node spectrum. In the weak coupling limit, peaks and steps are induced in second derivative d2I/dV2. In the strong coupling limit, the local negative-U centers are formed at impurity sites, and the Dirac cone structure is fully destroyed locally. At intermediate coupling, resonance peaks emerge. We map out the evolution of the resonance peaks from weak to strong coupling, which interpolate nicely between the two limits. There is a sudden qualitative change of behavior at intermediate coupling, indicating the possible existence of a local quantum phase transition. We also find that, even for a simple local phonon mode, the inherent coupling of spin and orbital degrees in topological insulators leads to the spin-polarized texture in inelastic Friedel oscillations induced by the local mode.
Surface Plasmons in 3D Topological Insulators
Kogar, Anshul; Vig, Sean; Cho, Gil; Thaler, Alexander; Xiao, Yiran; Hughes, Taylor; Wong, Man-Hong; Chiang, Tai-Chang; MacDougall, Greg; Abbamonte, Peter
2015-03-01
Most studies of three-dimensional (3D) topological insulators have concentrated on their one-electron properties as exhibited by angle-resolved photoemission spectroscopy (ARPES) or by scanning tunneling microscopy (STM). Many-body interactions are often neglected in the treatment of models of topological insulators, such as in the Kane-Mele and Bernevig-Hughes-Zhang models. Using angle-resolved inelastic electron scattering from the surface, I will present data on the collective mode that owes its existence to the presence of many-body interactions, the surface plasmon (SP), in two known 3D topological insulators, Bi2Se3 and Bi0.5Sb1.5Se1 . 5 + xTe1 . 5 - x. Surprisingly, the SP was prominent even after depressing the Fermi energy into the bulk band gap. Having studied the SP as a function of doping, momentum transfer and its aging properties, I will present evidence to suggest that bulk-surface coupling is crucial in explaining many of its properties. A simple model with dynamic bulk screening will be presented showing qualitative agreement with the observations. Lastly, the relation of the observed surface plasmon to the predicted spin-plasmon mode and to the kinks seen in the electronic dispersion as measured by ARPES will be discussed. The work was supported as part of the Center for Emergent Superconductivity, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science.
Quantum magnetotransport properties of Floquet topological insulators
Tahir, M.
2017-07-01
A theoretical realization of the quantum magnetotransport properties for the surface states of ultrathin Floquet topological insulators (FTIs) is presented. Their band structure in the presence of an external perpendicular magnetic field is derived and discussed. Further, the longitudinal and Hall conductivities are evaluated using linear response theory. A new quantum Hall state of matter has been found in FTIs under the application of a magnetic field where the n=0 Landau level undergoes a quantum phase transition from a trivial insulator state to a Hall insulator state. In the former state the Hall conductivity is zero at zero Fermi energy (EF=0) while in the latter the Hall conductivity is equal to e2 / h . The proposed effects are accessible to experiments which open new possibilities to study FTIs for the realization of (i) non trivial quantum phase transitions, (ii) exchange of surface states, and (iii) unusual quantum Hall plateaus.
Sugiura, Shiori; Shimada, Kazuo; Tajima, Naoya; Nishio, Yutaka; Terashima, Taichi; Isono, Takayuki; Kobayashi, Akiko; Zhou, Biao; Kato, Reizo; Uji, Shinya
2016-06-01
Resistance and dielectric constants have been measured in the antiferromagnetic insulating phase of the quasi-two-dimensional organic conductor λ-(BETS)2FeCl4 to understand charge transport. Nonlinear current-voltage characteristics are observed at low temperatures, which are explained by a charge transport model based on the electric-field dependent Coulomb potential between the thermally excited electron and hole. A small dip in the magnetic field dependence of the resistance is found at 1.2 T, which is ascribed to a spin-flop transition. The large difference between the in-plane and out-of-plane dielectric constants shows the two-dimensionality of the Coulomb potential, which is consistent with the charge transport model. The angular dependence of the metal-insulator transition field is determined, which suggests that the Zeeman effect of the 3d spins of the Fe ions plays an essential role.
DEFF Research Database (Denmark)
Xiao, Sanshui; Qiu, M.
2007-01-01
Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing....
A first theoretical realization of honeycomb topological magnon insulator
Owerre, S. A.
2016-09-01
It has been recently shown that in the Heisenberg (anti)ferromagnet on the honeycomb lattice, the magnons (spin wave quasipacticles) realize a massless two-dimensional (2D) Dirac-like Hamiltonian. It was shown that the Dirac magnon Hamiltonian preserves time-reversal symmetry defined with the sublattice pseudo spins and the Dirac points are robust against magnon-magnon interactions. The Dirac points also occur at nonzero energy. In this paper, we propose a simple realization of nontrivial topology (magnon edge states) in this system. We show that the Dirac points are gapped when the inversion symmetry of the lattice is broken by introducing a next-nearest neighbour Dzyaloshinskii-Moriya (DM) interaction. Thus, the system realizes magnon edge states similar to the Haldane model for quantum anomalous Hall effect in electronic systems. However, in contrast to electronic spin current where dissipation can be very large due to Ohmic heating, noninteracting topological magnons can propagate for a long time without dissipation as magnons are uncharged particles. We observe the same magnon edge states for the XY model on the honeycomb lattice. Remarkably, in this case the model maps to interacting hardcore bosons on the honeycomb lattice. Quantum magnetic systems with nontrivial magnon edge states are called topological magnon insulators. They have been studied theoretically on the kagome lattice and recently observed experimentally on the kagome magnet Cu(1-3, bdc) with three magnon bulk bands. Our results for the honeycomb lattice suggests an experimental procedure to search for honeycomb topological magnon insulators within a class of 2D quantum magnets and ultracold atoms trapped in honeycomb optical lattices. In 3D lattices, Dirac and Weyl points were recently studied theoretically, however, the criteria that give rise to them were not well-understood. We argue that the low-energy Hamiltonian near the Weyl points should break time-reversal symmetry of the pseudo spins
Topological Field Theory of Time-Reversal Invariant Insulators
Energy Technology Data Exchange (ETDEWEB)
Qi, Xiao-Liang; Hughes, Taylor; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-19
We show that the fundamental time reversal invariant (TRI) insulator exists in 4 + 1 dimensions, where the effective field theory is described by the 4 + 1 dimensional Chern-Simons theory and the topological properties of the electronic structure is classified by the second Chern number. These topological properties are the natural generalizations of the time reversal breaking (TRB) quantum Hall insulator in 2 + 1 dimensions. The TRI quantum spin Hall insulator in 2 + 1 dimensions and the topological insulator in 3 + 1 dimension can be obtained as descendants from the fundamental TRI insulator in 4 + 1 dimensions through a dimensional reduction procedure. The effective topological field theory, and the Z{sub 2} topological classification for the TRI insulators in 2+1 and 3+1 dimensions are naturally obtained from this procedure. All physically measurable topological response functions of the TRI insulators are completely described by the effective topological field theory. Our effective topological field theory predicts a number of novel and measurable phenomena, the most striking of which is the topological magneto-electric effect, where an electric field generates a magnetic field in the same direction, with an universal constant of proportionality quantized in odd multiples of the fine structure constant {alpha} = e{sup 2}/hc. Finally, we present a general classification of all topological insulators in various dimensions, and describe them in terms of a unified topological Chern-Simons field theory in phase space.
Stable topological insulators achieved using high energy electron beams
Zhao, Lukas; Konczykowski, Marcin; Deng, Haiming; Korzhovska, Inna; Begliarbekov, Milan; Chen, Zhiyi; Papalazarou, Evangelos; Marsi, Marino; Perfetti, Luca; Hruban, Andrzej; Wołoś, Agnieszka; Krusin-Elbaum, Lia
2016-01-01
Topological insulators are potentially transformative quantum solids with metallic surface states which have Dirac band structure and are immune to disorder. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift (∼2.5 MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap and reach the charge neutrality point (CNP). Controlling the beam fluence, we tune bulk conductivity from p- (hole-like) to n-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional character on the order of ten conductance quanta and reveals, both in Bi2Te3 and Bi2Se3, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size. PMID:26961901
A scheme for a topological insulator field effect transistor
Vali, Mehran; Dideban, Daryoosh; Moezi, Negin
2015-05-01
We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.
Comparative study of Weyl semimetal and topological/Chern insulators: Thin-film point of view
Yoshimura, Yukinori; Onishi, Wataru; Kobayashi, Koji; Ohtsuki, Tomi; Imura, Ken-Ichiro
2016-12-01
Regarding three-dimensional (3D) topological insulators and semimetals as a stack of constituent two-dimensional (2D) topological (or sometimes nontopological) systems is a useful viewpoint. Here, we perform a comparative study of the paradigmatic 3D topological phases: Weyl semimetal (WSM), strong and weak topological insulators (STI/WTI), and Chern insulator (CI). By calculating the Z and Z2 indices for the thin films of such 3D topological phases, we follow dimensional evolution of topological properties from 2D to 3D. It is shown that the counterparts of STI and WTI in the time-reversal symmetry broken CI system are, respectively, WSM and CI phases. The number ND of helical Dirac cones emergent on the surface of a topological insulator is shown to be identical to the number NW of the pairs of Weyl cones in the corresponding WSM phase: ND=NW . To test the robustness of this scenario against disorder, we have studied the transport property of disordered WSM thin films, taking into account both the bulk and surface contributions.
Transport properties of topological insulators films and nanowires
Institute of Scientific and Technical Information of China (English)
Liu Yi; Ma Zheng; Zhao Yan-Fei; Meenakshi Singh; Wang Jian
2013-01-01
The last several years have witnessed the rapid developments in the study and understanding of topological insulators.In this review,after a brief summary of the history of topological insulators,we focus on the recent progress made in transport experiments on topological insulator films and nanowires.Some quantum phenomena,including the weak antilocalization,the Aharonov-Bohm effect,and the Shubnikov-de Haas oscillations,observed in these nanostructures are described.In addition,the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.
Electromagnetic Scattering by Spheres of Topological Insulators
Ge, Lixin; Zi, Jian
2015-01-01
The electromagnetic scattering properties of topological insulator (TI) spheres are systematically studied in this paper. Unconventional backward scattering caused by the topological magneto-electric (TME) effect of TIs are found in both Rayleigh and Mie scattering regimes. This enhanced backward scattering can be achieved by introducing an impedance-matched background which can suppress the bulk scattering. For the cross-polarized scattering coefficients, interesting antiresonances are found in the Mie scattering regime, wherein the cross-polarized electromagnetic fields induced by the TME effect are trapped inside TI spheres. In the Rayleigh limit, the quantized TME effect of TIs can be determined by measuring the electric-field components of scattered waves in the far field.
The strong side of weak topological insulators
Kraus, Yaacov; Ringel, Zohar; Stern, Ady
2012-02-01
Three-dimensional topological insulators are classified into ``strong'' (STI) and ``weak'' (WTI) according to the nature of their surface states. While the surface states of the STI are topologically protected, in the WTI they are believed to be very fragile to disorder. In this work we show that the WTI surface states are actually protected from any random perturbation which does not break time-reversal symmetry, and does not close the bulk energy gap. Consequently, the conductivity of metallic surfaces in the clean system will remain finite even in the presence of strong disorder of this type. In the weak disorder limit the surfaces are perfect metals, and strong surface disorder only acts to push them inwards. We find that WTI's differ from STI's primarily in their anisotropy, and that the anisotropy is not a sign of their weakness but rather of their richness.
Strong side of weak topological insulators
Ringel, Zohar; Kraus, Yaacov E.; Stern, Ady
2012-07-01
Three-dimensional topological insulators are classified into “strong” (STI) and “weak” (WTI) according to the nature of their surface states. While the surface states of the STI are topologically protected from localization, this does not hold for the WTI. In this work, we show that the surface states of the WTI are actually protected from any random perturbation that does not break time-reversal symmetry, and does not close the bulk energy gap. Consequently, the conductivity of metallic surfaces in the clean system remains finite even in the presence of strong disorder of this type. In the weak disorder limit, the surfaces are found to be perfect metals, and strong surface disorder only acts to push the metallic surfaces inwards. We find that the WTI differs from the STI primarily in its anisotropy, and that the anisotropy is not a sign of its weakness but rather of its richness.
Distinctive features of transport in topological insulators
Sacksteder, Vincent; Wu, Quansheng; Arnardottir, Kristin; Shelykh, Ivan; Kettemann, Stefan
2015-03-01
The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatures are (1) a conductance plateau in long wires and (2) a conductivity which always increases with sample size. We numerically show that the bulk substantially accelerates the conductance plateaus's decay in a magnetic field. It also reduces the effects of surface disorder and causes the magnitude of the surface conductivity and the magnetoconductivity to depend systematically on sample details such as doping and disorder strength. In addition, we predict a new signature of the topological state: at low temperatures the magnetoresistance will deviate strongly from the Hikami-Larkin-Nagaoka (HLN) formula. In this regime the magnetoresistance is dominated by scattering processes which wrap around the TI sample. The HLN formula's shoulder is replaced by a feature with a larger critical field magnetic strength that is caused by wrapping. Inside the wrapping regime the magnetoconductance will lose its dependence on temperature. This new topological signature should be visible in the same samples and temperatures where the Altshuler-Aronov-Spivak (AAS) effect has already been observed.
Topological Strings, Two-Dimensional Yang-Mills Theory and Chern-Simons Theory on Torus Bundles
Caporaso, N; Griguolo, L; Pasquetti, S; Seminara, D; Szabó, R J
2006-01-01
We study the relations between two-dimensional Yang-Mills theory on the torus, topological string theory on a Calabi-Yau threefold whose local geometry is the sum of two line bundles over the torus, and Chern-Simons theory on torus bundles. The chiral partition function of the Yang-Mills gauge theory in the large N limit is shown to coincide with the topological string amplitude computed by topological vertex techniques. We use Yang-Mills theory as an efficient tool for the computation of Gromov-Witten invariants and derive explicitly their relation with Hurwitz numbers of the torus. We calculate the Gopakumar-Vafa invariants, whose integrality gives a non-trivial confirmation of the conjectured nonperturbative relation between two-dimensional Yang-Mills theory and topological string theory. We also demonstrate how the gauge theory leads to a simple combinatorial solution for the Donaldson-Thomas theory of the Calabi-Yau background. We match the instanton representation of Yang-Mills theory on the torus with ...
Pseudogap and superconductivity in two-dimensional doped charge-transfer insulators
Fratino, L.; Sémon, P.; Sordi, G.; Tremblay, A.-M. S.
2016-06-01
High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per CuO2 unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.
Two dimensional black-hole as a topological coset model of c=1 string theory
Mukhi, S
1993-01-01
We show that a special superconformal coset (with $\\hat c =3$) is equivalent to $c=1$ matter coupled to two dimensional gravity. This identification allows a direct computation of the correlation functions of the $c=1$ non-critical string to all genus, and at nonzero cosmological constant, directly from the continuum approach. The results agree with those of the matrix model. Moreover we connect our coset with a twisted version of a Euclidean two dimensional black hole, in which the ghost and matter systems are mixed.
Enhancing Casimir repulsion via topological insulator multilayers
Zeng, Ran; Chen, Liang; Nie, Wenjie; Bi, Meihua; Yang, Yaping; Zhu, Shiyao
2016-08-01
We propose to observe the enhanced Casimir repulsion between two parallel multilayer walls made of alternating layers of a topological insulator (TI) and a normal insulator. Based on the transfer matrix method, the Fresnel coefficients matrix is generalized to apply to the TI multilayer structure. The Casimir repulsion under the influence of the magnetization orientation in the magnetic coatings on TI layer surfaces, the layer thicknesses, and the topological magnetoelectric polarizability, is investigated. We show that, for the multilayer structures with parallel magnetization on the TI layer surfaces, it is possible to enhance the repulsion by increasing the TI layer number, which is due to the accumulation of the contribution to the repulsion from the polarization rotation effect occurring on each TI layer surface. Generally, in the distance region where there is Casimir attraction between semi-infinite TIs, the force may turn into repulsion in TI multilayer structure, and in the region of repulsion for semi-infinite TI, the repulsive force can be enhanced in magnitude, the enhancement tends to a maximum while the structure contains sufficiently many layers.
Wang, Yunhua; Liu, Yulan; Wang, Biao
2017-01-01
Periodically driven nontrivial quantum states open another door to engineer topological phases in solid systems by light. Here we show, based on the Floquet-Bloch theory, that the on-resonant linearly and circularly polarized infrared light brings in the exotic Floquet quantum spin Hall state and half-metal in two-dimensional Metal-organic frameworks (2D MOFs) because of the unbroken and broken time-reversal symmetry, respectively. We also observe that the off-resonant light triggers topological quantum phase transitions and induces semimetals with pseudospin-1 Dirac-Weyl fermions via the photon-dressed topological band structures of 2D MOFs. This work paves a way to design light-controlled spintronics and optoelectronics based on 2D MOFs. PMID:28134315
Poli, Charles; Schomerus, Henning; Bellec, Matthieu; Kuhl, Ulrich; Mortessagne, Fabrice
2017-06-01
Bipartite quantum systems from the chiral universality classes admit topologically protected zero modes at point defects. However, in two-dimensional systems these states can be difficult to separate from compacton-like localized states that arise from flat bands, formed if the two sublattices support a different number of sites within a unit cell. Here we identify a natural reduction of chiral symmetry, obtained by coupling sites on the majority sublattice, which gives rise to spectrally isolated point-defect states, topologically characterized as zero modes supported by the complementary minority sublattice. We observe these states in a microwave realization of a dimerized Lieb lattice with next-nearest neighbour coupling, and also demonstrate topological mode selection via sublattice-staggered absorption.
Wang, Yunhua; Liu, Yulan; Wang, Biao
2017-01-01
Periodically driven nontrivial quantum states open another door to engineer topological phases in solid systems by light. Here we show, based on the Floquet-Bloch theory, that the on-resonant linearly and circularly polarized infrared light brings in the exotic Floquet quantum spin Hall state and half-metal in two-dimensional Metal-organic frameworks (2D MOFs) because of the unbroken and broken time-reversal symmetry, respectively. We also observe that the off-resonant light triggers topological quantum phase transitions and induces semimetals with pseudospin-1 Dirac-Weyl fermions via the photon-dressed topological band structures of 2D MOFs. This work paves a way to design light-controlled spintronics and optoelectronics based on 2D MOFs.
Magnetoconductance in InN/GaN quantum wells in topological insulator phase
Bardyszewski, W.; Rodak, D.; Łepkowski, S. P.
2017-04-01
We present a theoretical study of the magnetic-field effect on the electronic properties of the two-dimensional, hypothetical topological insulator based on the InN/GaN quantum well system. Using the effective two-dimensional Hamiltonian, we have modelled magneto-transport in mesoscopic, symmetric samples of such materials. It turns out that, as in the case of the other two-dimensional topological insulators, the magnetoconductance in such samples is quantized due to the presence of helical edge states for magnetic fields below a certain critical value and for fairly small disorder strength. However, in our case the helical edge transport is much more prone to the disorder than, for example, in the case of topological insulators based on the HgTe/CdTe quantum wells. At low enough level of disorder and for the Fermi energy located in the energy gap of an infinite planar quantum well, we may expect an interesting phenomenon of non-monotonic dependence of the conductance on the magnetic field caused by the complicated interplay of couplings between the heavy hole, light hole and conduction subbands.
Emergence of magnetic topological states in topological insulators doped with magnetic impurities
Tran, Minh-Tien; Nguyen, Hong-Son; Le, Duc-Anh
2016-04-01
Emergence of the topological invariant and the magnetic moment in topological insulators doped with magnetic impurities is studied based on a mutual cooperation between the spin-orbit coupling of electrons and the spin exchange of these electrons with magnetic impurity moments. The mutual cooperation is realized based on the Kane-Mele model in the presence of magnetic impurities. The topological invariants and the spontaneous magnetization are self-consistently determined within the dynamical mean-field theory. We find different magnetic topological phase transitions, depending on the electron filling. At half filling an antiferromagnetic topological insulator, which exhibits the quantum spin Hall effect, exists in the phase region between the paramagnetic topological insulator and the trivially topological antiferromagnetic insulator. At quarter and three-quarter fillings, a ferromagnetic topological insulator, which exhibits the quantum anomalous Hall effect, occurs in the strong spin-exchange regime.
Topological phase transitions driven by next-nearest-neighbor hopping in two-dimensional lattices
Beugeling, W.; Everts, J.C.; de Morais Smith, C.
2012-01-01
For two-dimensional lattices in a tight-binding description, the intrinsic spin-orbit coupling, acting as a complex next-nearest-neighbor hopping, opens gaps that exhibit the quantum spin Hall effect. In this paper, we study the effect of a real next-nearest-neighbor hopping term on the band structu
Two-dimensional acoustic particle velocity sensors based on a crossing wires topology
Pjetri, O.
2016-01-01
This thesis describes the design and realization of two-dimensional acoustic particle velocity sensors based on thermal convection. The sensors are of the order of 1 mm×1 mm and consist of two crossing wires with each wire sensing the acoustic particle velocity in the direction parallel to it. Their
Otsuka, Yuichi; Yunoki, Seiji; Sorella, Sandro
2016-01-01
The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.
Directory of Open Access Journals (Sweden)
Yuichi Otsuka
2016-03-01
Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.
Cai, Libing; Wang, Jianguo; Zhu, Xiangqin; Wang, Yue; Zhang, Dianhui
2015-01-01
Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data.
On the two-dimensional metallic state in silicon-on-insulator structures
Brunthaler, G.; Prinz, A.; Pillwein, G.; Lindelof, P. E.; Ahopelto, J.
2002-01-01
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility versus density, the strong drop in resistivity and the critical concentration for the metal-insulator transition are all consistent. On the basis of our SOI data for the temperature and in-plane magnetic field dependence of the resistivity, we discuss several mo...
Fermi surface topology in the proximity to the Mott insulator
Yamaji, Youhei; Imada, Masatoshi
2010-03-01
Since the discovery of cuprate superconductors, how its low energy electronic excitations evolve with doping has attracted much attention. The normal metallic state offers a typical example of strongly correlated metallic state. Recent experiments suggest the existence of the k-dependent renormalized quasiparticle [1], or more drastic reconstruction of the Fermi surface [2]. Numerical theories on the two-dimensional Hubbard model also predict the reconstruction of the Fermi surface [3]. We propose a scenario for the Fermi surface reconstruction in the proximity to the Mott insulator based on the simple slave-boson mean-field theory [4] including charge fluctuations [5]. The key idea is the emergence of new fermionic excitations consisting of charge bosons and low energy coherent electrons, and occurrence of topological changes in the Fermi surface. We also discuss relation between the topological changes and superconductivities. [1] As a review, A. Damascelli, Z. Hussain, and Z.-X. Shen, Rev. Mod. Phys. 75, 473 (2003). [2] J. Meng, et al., arXiv: 0906.2682v1. [3] For example, T. D. Stanescu and G. Kotliar, Phys. Rev. B 74, 125110 (2006). [4] G. Kotliar, and A. E. Ruckenstein: Phys. Rev. Lett. 57, 1362 (1987). [5] R. Raimondi, and C. Castellani; Phys. Rev. B 48, 11453 (1993).
Electrical control of spin in topological insulators
Chang, Kai
2012-02-01
All-electrical manipulation of electron spin in solids becomes a central issue of quantum information processing and quantum computing. The many previous proposals are based on spin-orbit interactions in semiconductors. Topological insulator, a strong spin-orbit coupling system, make it possible to control the spin transport electrically. Recent calculations proved that external electric fields can drive a HgTe quantum well from normal band insulator phase to topological insulator phase [1]. Since the topological edge states are robust against local perturbation, the controlling of edge states using local fields is a challenging task. We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI [2]. An electrical switching of the edge-state transport can also be realized using quantum point contacts in quantum spin Hall bars. The switch-on/off of the edge channel is caused by the finite size effect of the quantum point contact and therefore can be manipulated by tuning the voltage applied on the split gate [3,4]. The magnetic ions doped on the surface of 3D TI can be correlated through the helical electrons. The RKKY interaction mediated by the helical Dirac electrons consists of the Heisenberg-like, Ising-like, and Dzyaloshinskii-Moriya (DM)-like terms, which can be tuned
The Mott metal-insulator transition in half-filled two-dimensional Hubbard models
Directory of Open Access Journals (Sweden)
Peyman Sahebsara
2008-06-01
Full Text Available We study the Mott transition in the two dimensional Hubbard model by using the variational cluster approximation. The transition potential obtained is roughly Uc ≈ 2 and 6 for square and triangular lattices, respectively. A comparison between results of this approximation and other quantum cluster methods is presented. Our zero-temperature calculation at strong coupling show that the transition on the triangular and square lattices occur at lower values of compared with other numerical techniques such as DMFT, CDMFT, and DCA. We also study the thermodynamic limit by an extrapolation to infinite size.
Associating Specific Materials with Topological Insulation Behavior
Zhang, Xiuwen
2014-03-01
The first-principles (a) total-energy/stability calculations combined with (b) electronic structure calculations of band inversion, spin-polarization and topological invariants (Z2) has led to the design and prediction of specific materials that are topological insulators in this study. We classify bulk materials into four types of band-inversion behaviors (TI-1, TI-2, BI-3, BI-4), based on the number of band inversions and their distributions on various time reversal invariant k points. Depending on the inversion type in bulk, the corresponding surface states have different protections e.g., protected by time reversal symmetry (in TI-1 materials), spatial symmetry (in TI-2), or not protected (in BI-3, BI-4). Subject 1 Discovery of new TI by screening materials for a Z2 metric: Such high-throughput search in the framework of Inverse Design methodology predicts a few previously undocumented materials that are TI-1 in their ground state crystal structure. We also predict dozens of materials that are TI-1 however in structures that are not ground states (e.g. perovskite structure of II-Bi-O3). Subject 2 Design Principle to increase the gap of TI-1 materials: In HgTe-like cubic topological materials, the insulating gap is zero since the spin-orbit splitting is positive and so a 4-fold half-filled p-like band is near the Fermi level. By design of hybridization of d-orbitals into the p-like bands, one can create negative spin-orbit splitting and so a finite insulating gap. Subject 3 Unconventional spin textures of TI surface states: Despite the fact that one of our predicted TI-1 KBaBi has inversion symmetry in the bulk-a fact that that would preclude bulk spin polarization-we find a Dresselhaus-like spin texture with non-helical spin texture. This originates from the local spin polarization, anchored on the atomic sites with inversion asymmetric point groups, that is compensated due to global inversion symmetry in bulk. In collaboration with: Jun-Wei Luo, Qihang Liu
Experimental demonstration of anomalous Floquet topological insulator for sound
Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng
2016-11-01
Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.
Chiral Hyperbolic Metamaterial as A Robust Photonic Topological Insulator
Gao, Wenlong; Yang, Biao; Liu, Fu; Fang, Fengzhou; Li, Jensen; Zhang, Shuang
2014-01-01
Topological insulators represent a new phase of matter which remain insulating for bulk electron transport while supporting protected one-way edge states. Recently it has been shown that the concept of topological order can also be transferred to photonic systems. Thus far however, photonic topological insulators have been realized almost exclusively in periodic structures where the specific connection between lattice symmetry and the band structure plays a critical role. Here we demonstrate robust photonic topological order in a homogenous medium described by only a few effective electromagnetic parameters, and not requiring the presence of an external magnetic field. By combining hyperbolicity and chirality, we show that a topologically nontrivial gap appears between the equi-frequency surfaces which support one-way edge states. The effective medium approach towards topological insulation paves the way for highly compact one-way transportation of electromagnetic waves in integrated photonic circuits.
Electrically tuned magnetic order and magnetoresistance in a topological insulator.
Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu
2014-09-15
The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.
Terahertz imaging of Landau levels in HgTe-based topological insulators
Kadykov, Aleksandr M.; Torres, Jeremie; Krishtopenko, Sergey S.; Consejo, Christophe; Ruffenach, Sandra; Marcinkiewicz, Michal; But, Dmytro; Knap, Wojciech; Morozov, Sergey V.; Gavrilenko, Vladimir I.; Mikhailov, Nikolai N.; Dvoretsky, Sergey A.; Teppe, Frederic
2016-06-01
We report on sub-terahertz photoconductivity under the magnetic field of a two dimensional topological insulator based on HgTe quantum wells. We perform a detailed visualization of Landau levels by means of photoconductivity measured at different gate voltages. This technique allows one to determine a critical magnetic field, corresponding to topological phase transition from inverted to normal band structure, even in almost gapless samples. The comparison with realistic calculations of Landau levels reveals a smaller role of bulk inversion asymmetry in HgTe quantum wells than it was assumed previously.
Classification of Topological Insulators with Time-Reversal and Inversion Symmetry*
Institute of Scientific and Technical Information of China (English)
LIU Lan-Feng; CHEN Bo-Lun; KOU Su-Peng
2011-01-01
In this paper, we find that topological insulators with time-reversal symmetry and inversion symmetry featuring two-dimensional quantum spin Hall (QSH) state can be divided into 16 c/asses, which are characterized by four Z2 topological variables ζk = O,1 at four points with high symmetry in the Brillouin zone. We obtain the corresponding edge states for each one of these sixteen classes of QSHs. In addition, it is predicted that massless fermionic excitations appear at the quantum phase transition between different QSH states. In the end, we also briefly discuss the threedimensional case.
Costanza, E. F.; Costanza, G.
2016-10-01
Continuum partial differential equations are obtained from a set of discrete stochastic evolution equations of both non-Markovian and Markovian processes and applied to the diffusion within the context of the lattice gas model. A procedure allowing to construct one-dimensional lattices that are topologically equivalent to two-dimensional lattices is described in detail in the case of a rectangular lattice. This example shows the general features that possess the procedure and extensions are also suggested in order to provide a wider insight in the present approach.
Anomalous magnetoresistance in magnetized topological insulator cylinders
Energy Technology Data Exchange (ETDEWEB)
Siu, Zhuo Bin, E-mail: a0018876@nus.edu.sg [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, Singapore 117608 (Singapore); Jalil, Mansoor B. A. [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore)
2015-05-07
The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.
Photonic spin Hall effect in topological insulators
Zhou, Xinxing; Ling, Xiaohui; Chen, Shizhen; Luo, Hailu; Wen, Shuangchun
2013-01-01
In this paper we theoretically investigate the photonic spin Hall effect (SHE) of a Gaussian beam reflected from the interface between air and topological insulators (TIs). The photonic SHE is attributed to spin-orbit coupling and manifests itself as in-plane and transverse spin-dependent splitting. We reveal that the spin-orbit coupling effect in TIs can be routed by adjusting the axion angle variations. Unlike the transverse spin-dependent splitting, we find that the in-plane one is sensitive to the axion angle. It is shown that the polarization structure in magneto-optical Kerr effect is significantly altered due to the spin-dependent splitting in photonic SHE. We theoretically propose a weak measurement method to determine the strength of axion coupling by probing the in-plane splitting of photonic SHE.
The role of short-range magnetic correlations in the gap opening of topological Kondo insulators
Ramos, E.; Franco, R.; Silva-Valencia, J.; Foglio, M. E.; Figueira, M. S.
2017-08-01
In this article we investigate the effects of short-range anti-ferromagnetic correlations on the gap opening of topological Kondo insulators. We add a Heisenberg term to the periodic Anderson model at the limit of strong correlations in order to allow a small degree of hopping of the localized electrons between neighboring sites of the lattice. This new model is adequate for studying topological Kondo insulators, whose paradigmatic material is the compound SmB6 . The main finding of the article is that the short-range antiferromagnetic correlations, present in some Kondo insulators, contribute decisively to the opening of the Kondo gap in their density of states. These correlations are produced by the interaction between moments on the neighboring sites of the lattice. For simplicity, we solve the problem on a two dimensional square lattice. The starting point of the model is the 4f-Ce ions orbitals, with J=5/2 multiplet in the presence of spin-orbit coupling. We present results for the Kondo and for the antiferromagnetic correlation functions. We calculate the phase diagram of the model, and as we vary the Ef level position from the empty regime to the Kondo regime, the system develops metallic and topological Kondo insulator phases. The band structure calculated shows that the model describes a strong topological insulator.
Coupling Organic Molecules to Topological Insulators
Hewitt, Andrew Scott
Macroscopic systems displaying quantum behavior can be investigated to gain insights into the fundamental nature of our universe. Topological insulators (TIs) are a recent example of such systems exhibiting exotic physical phenomenon in condensed matter. These topologically nontrivial materials are bulk insulating and have spin-momentum locked surface states as a result of its interface with a normal insulator. The topological surface states (TSS) are guaranteed by the materials topological invariant, and for materials studied in this thesis, protected by time-reversal symmetry (TRS). The TSS exist in ambient conditions with no need for external applied fields allowing investigations of its nature relatively easy and obvious interest for spintronic devices. Organic molecules represent an electronic and magnetic knob by which one can tune the properties of the substrate of interest and are also of interest for spintronic applications. The organic-TI interface is a new unexplored playground to observe and probe novel physics. The surface is a unique environment for each solid and must be characterized by surface sensitive techniques. Prototypical TIs of study have been the van der Waals (vdW) layered binary chalcogenides. Characterization of the surface of cleaved Bi2Se3 samples by X-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) show that coexisting surface terminations are probable if performed in air, while in-situ cleaves are terminated as expected along a vdW layer. The electronic structure depends on the surface termination illustrating the important question of surface effects on the TSS. Breaking TRS in these systems is predicted to result in the quantum anomalous hall effect and topological magnetoelectric effects. Ferromagnetic TIs are expected to have a gapped TSS that can be measured by ARPES. We investigated bulk Cr-doping of the TI Bi1.5Sb0.5Te1.7Se1.3 (BSTS) studied by XPS and ARPES. Low-doped samples have
A short course on topological insulators band structure and edge states in one and two dimensions
Asbóth, János K; Pályi, András
2016-01-01
This course-based primer provides newcomers to the field with a concise introduction to some of the core topics in the emerging field of topological insulators. The aim is to provide a basic understanding of edge states, bulk topological invariants, and of the bulk--boundary correspondence with as simple mathematical tools as possible. The present approach uses noninteracting lattice models of topological insulators, building gradually on these to arrive from the simplest one-dimensional case (the Su-Schrieffer-Heeger model for polyacetylene) to two-dimensional time-reversal invariant topological insulators (the Bernevig-Hughes-Zhang model for HgTe). In each case the discussion of simple toy models is followed by the formulation of the general arguments regarding topological insulators. The only prerequisite for the reader is a working knowledge in quantum mechanics, the relevant solid state physics background is provided as part of this self-contained text, which is complemented by end-of-chapter problems.
Topological patterns in two-dimensional gel electrophoresis of DNA knots.
Michieletto, Davide; Marenduzzo, Davide; Orlandini, Enzo
2015-10-06
Gel electrophoresis is a powerful experimental method to probe the topology of DNA and other biopolymers. Although there is a large body of experimental work that allows us to accurately separate different topoisomers of a molecule, a full theoretical understanding of these experiments has not yet been achieved. Here we show that the mobility of DNA knots depends crucially and subtly on the physical properties of the gel and, in particular, on the presence of dangling ends. The topological interactions between these and DNA molecules can be described in terms of an "entanglement number" and yield a nonmonotonic mobility at moderate fields. Consequently, in 2D electrophoresis, gel bands display a characteristic arc pattern; this turns into a straight line when the density of dangling ends vanishes. We also provide a novel framework to accurately predict the shape of such arcs as a function of molecule length and topological complexity, which may be used to inform future experiments.
Anomalous photoelectric effect of a polycrystalline topological insulator film.
Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei
2014-07-29
A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators.
Spin-torque generation in topological insulator based heterostructures
Fischer, Mark H.
2016-03-11
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.
Anti-de Sitter Space as Topological Insulator and Holography
Ho, Shih-Hao
2012-01-01
We argue that the Anti-de Sitter (AdS) space can be thought as a topological insulator with a co-dimensional one defect living at the UV boundary. Combining the bulk/edge correspondence for the topological insulators and the AdS/CFT correspondence, the fermionic topological phases for the dual conformal field theories (CFTs) can then be classified in the same way as classifying the topological phases of the massive free fermions in the co-dimensional one higher Minkowski spaces. The latter can then be obtained in Kitaev's framework of the K-theory analysis in classifying the topological insulators/superconductors. Our framework provides a way of classifying the symmetry-protected topologically ordered phases for the strongly interacting gapless systems, of which the classification is intractable in the context of strongly correlated condensed matters devised mainly for gapped systems.
Modulational instability and solitary waves in polariton topological insulators
Kartashov, Yaroslav V
2016-01-01
Optical microcavities supporting exciton-polariton quasi-particles offer one of the most powerful platforms for investigation of rapidly developing area of topological photonics in general, and of photonic topological insulators in particular. Energy bands of the microcavity polariton graphene are readily controlled by magnetic field and influenced by the spin-orbit coupling effects, a combination leading to formation of linear unidirectional edge states in polariton topological insulators as predicted very recently. In this work we depart from the linear limit of non-interacting polaritons and predict instabilities of the nonlinear topological edge states resulting in formation of the localized topological quasi-solitons, which are exceptionally robust and immune to backscattering wavepackets propagating along the graphene lattice edge. Our results provide a background for experimental studies of nonlinear polariton topological insulators and can influence other subareas of photonics and condensed matter phy...
Huang, Ching-Yu; Wei, Tzu-Chieh
2016-04-01
Symmetry-protected topological (SPT) phases exhibit nontrivial order if symmetry is respected but are adiabatically connected to the trivial product phase if symmetry is not respected. However, unlike the symmetry-breaking phase, there is no local order parameter for SPT phases. Here we employ a tensor-network method to compute the topological invariants characterized by the simulated modular S and T matrices to study transitions in a few families of two-dimensional (2D) wave functions which are ZN (N =2 and3 ) symmetric. We find that in addition to the topologically ordered phases, the modular matrices can be used to identify nontrivial SPT phases and detect transitions between different SPT phases as well as between symmetric and symmetry-breaking phases. Therefore modular matrices can be used to characterize various types of gapped phases in a unifying way.
Ripple-modulated electronic structure of a 3D topological insulator.
Okada, Yoshinori; Zhou, Wenwen; Walkup, D; Dhital, Chetan; Wilson, Stephen D; Madhavan, V
2012-01-01
Three-dimensional topological insulators host linearly dispersing states with unique properties and a strong potential for applications. An important ingredient in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Direct analogy to the Dirac material graphene suggests that a possible avenue for controlling local properties is via a controlled structural deformation such as the formation of ripples. However, the influence of such ripples on topological insulators is yet to be explored. Here we use scanning tunnelling microscopy to determine the effects of one-dimensional buckling on the electronic properties of Bi(2)Te(3.) By tracking spatial variations of the interference patterns generated by the Dirac electrons we show that buckling imposes a periodic potential, which locally modulates the surface-state dispersion. This suggests that forming one- and two-dimensional ripples is a viable method for creating nanoscale potential landscapes that can be used to control the properties of Dirac electrons in topological insulators.
Quadratic band touching points and flat bands in two-dimensional topological Floquet systems
Du, Liang; Zhou, Xiaoting; Fiete, Gregory A.
2017-01-01
In this paper we theoretically study, using Floquet-Bloch theory, the influence of circularly and linearly polarized light on two-dimensional band structures with Dirac and quadratic band touching points, and flat bands, taking the nearest neighbor hopping model on the kagome lattice as an example. We find circularly polarized light can invert the ordering of this three-band model, while leaving the flat band dispersionless. We find a small gap is also opened at the quadratic band touching point by two-photon and higher order processes. By contrast, linearly polarized light splits the quadratic band touching point (into two Dirac points) by an amount that depends only on the amplitude and polarization direction of the light, independent of the frequency, and generally renders dispersion to the flat band. The splitting is perpendicular to the direction of the polarization of the light. We derive an effective low-energy theory that captures these key results. Finally, we compute the frequency dependence of the optical conductivity for this three-band model and analyze the various interband contributions of the Floquet modes. Our results suggest strategies for optically controlling band structure and interaction strength in real systems.
Long-range ordering of topological excitations in a two-dimensional superfluid far from equilibrium
Salman, Hayder; Maestrini, Davide
2016-10-01
We study the relaxation of a two-dimensional (2D) ultracold Bose gas from a nonequilibrium initial state containing vortex excitations in experimentally realizable square and rectangular traps. We show that the subsystem of vortex gas excitations results in the spontaneous emergence of a coherent superfluid flow with a nonzero coarse-grained vorticity field. The stream function of this emergent quasiclassical 2D flow is governed by a Poisson-Boltzmann equation. This equation reveals that maximum entropy states of a neutral vortex gas that describe the spectral condensation of energy can be classified into types of flow depending on whether or not the flow spontaneously acquires angular momentum. Numerical simulations of a neutral point vortex model and a Bose gas governed by the 2D Gross-Pitaevskii equation in a square reveal that a large-scale monopole flow field with net angular momentum emerges that is consistent with predictions of the Poisson-Boltzmann equation. The results allow us to characterize the spectral energy condensate in a 2D quantum fluid that bears striking similarity to similar flows observed in experiments of 2D classical turbulence. By deforming the square into a rectangular region, the resulting maximum entropy state switches to a dipolar flow field with zero net angular momentum.
Stable topological modes in two-dimensional Ginzburg-Landau models with trapping potentials
Mihalache, D; Skarka, V; Malomed, B A; Leblond, H; Aleksić, N B; Lederer, F
2010-01-01
Complex Ginzburg-Landau (CGL) models of laser media (with the cubic-quintic nonlinearity) do not contain an effective diffusion term, which makes all vortex solitons unstable in these models. Recently, it has been demonstrated that the addition of a two-dimensional periodic potential, which may be induced by a transverse grating in the laser cavity, to the CGL equation stabilizes compound (four-peak) vortices, but the most fundamental "crater-shaped" vortices (CSVs), alias vortex rings, which are, essentially, squeezed into a single cell of the potential, have not been found before in a stable form. In this work we report families of stable compact CSVs with vorticity S=1 in the CGL model with the external potential of two different types: an axisymmetric parabolic trap, and the periodic potential. In both cases, we identify stability region for the CSVs and for the fundamental solitons (S=0). Those CSVs which are unstable in the axisymmetric potential break up into robust dipoles. All the vortices with S=2 a...
Tunneling spectroscopy of a magnetic adatoms on topological insulator surfaces
Misiorny, M.; Bjerngaard, M.; Paaske, J.
In this communication, we address the question of how the presence of a magnetic impurity on a topological insulator (TI) surface manifests in the inelastic electron tunneling spectroscopy (IETS) when such a system is probed by a STM. For this purpose, we consider a single magnetic adatom with arbitrary spin, whose dynamics is governed by the local magnetic anisotropy. The spin is exchange-coupled to two-dimensional helical surface electrons, corresponding to the surface of a three-dimensional TI like Bi2Se3, with its characteristic hexagonally warped Dirac cone band structure. Employing an effective exchange-tunneling model, we calculate the non-linear differential conductance from a spin-polarized STM tip to the helical substrate, valid in the perturbative regime of weak exchange-tunneling and including the nonequilibrium pumping of the adatom spin states. The interplay between the magnetic anisotropy and the spin-momentum locked surface electrons is shown to give a number of specific imprints in the IETS, which could be investigated by spin-resolved scanning tunneling spectroscopy. M. Misiorny, M. Bjerngaard and J. Paaske, manuscript in preparation Work supported by the Polish Ministry of Science and Education as `Iuventus Plus' project (IP2014 030973) in years 2015-2016.
Baruselli, Pier Paolo; Vojta, Matthias
2015-10-09
SmB_{6} was recently proposed to be both a strong topological insulator and a topological crystalline insulator. For this and related cubic topological Kondo insulators, we prove the existence of four different topological phases, distinguished by the sign of mirror Chern numbers. We characterize these phases in terms of simple observables, and we provide concrete tight-binding models for each phase. Based on theoretical and experimental results for SmB_{6} we conclude that it realizes the phase with C_{k_{z}=0}^{+}=+2, C_{k_{z}=π}^{+}=+1, C_{k_{x}=k_{y}}^{+}=-1, and we propose a corresponding minimal model.
Durand, Marc; Kraynik, Andrew M; van Swol, Frank; Käfer, Jos; Quilliet, Catherine; Cox, Simon; Ataei Talebi, Shirin; Graner, François
2014-06-01
Bubble monolayers are model systems for experiments and simulations of two-dimensional packing problems of deformable objects. We explore the relation between the distributions of the number of bubble sides (topology) and the bubble areas (geometry) in the low liquid fraction limit. We use a statistical model [M. Durand, Europhys. Lett. 90, 60002 (2010)] which takes into account Plateau laws. We predict the correlation between geometrical disorder (bubble size dispersity) and topological disorder (width of bubble side number distribution) over an extended range of bubble size dispersities. Extensive data sets arising from shuffled foam experiments, surface evolver simulations, and cellular Potts model simulations all collapse surprisingly well and coincide with the model predictions, even at extremely high size dispersity. At moderate size dispersity, we recover our earlier approximate predictions [M. Durand, J. Kafer, C. Quilliet, S. Cox, S. A. Talebi, and F. Graner, Phys. Rev. Lett. 107, 168304 (2011)]. At extremely low dispersity, when approaching the perfectly regular honeycomb pattern, we study how both geometrical and topological disorders vanish. We identify a crystallization mechanism and explore it quantitatively in the case of bidisperse foams. Due to the deformability of the bubbles, foams can crystallize over a larger range of size dispersities than hard disks. The model predicts that the crystallization transition occurs when the ratio of largest to smallest bubble radii is 1.4.
Classical electromagnetic model of surface states in topological insulators
Lakhtakia, Akhlesh
2016-01-01
A topological insulator is classically modeled as an isotropic dielectric-magnetic with a magnetoelectric pseudoscalar $\\Psi$ existing in its bulk while its surface is charge-free and current-free. An alternative model is obtained by setting $\\Psi\\equiv0$ and incorporating surface charge and current densities characterized by an admittance $\\gamma$. Analysis of plane-wave reflection and refraction due to a topological-insulator half space reveals that the parameters $\\Psi$ and $\\gamma$ arise identically in the reflection and transmission coefficients, implying that the two classical models cannot be distinguished on the basis of any scattering scenario. However, as $\\Psi$ disappears from the Maxwell equations applicable to any region occupied by the topological insulator, and because surface states exist on topological insulators as protected conducting states, the alternative model must be chosen.
Classical electromagnetic model of surface states in topological insulators
Lakhtakia, Akhlesh; Mackay, Tom G.
2016-07-01
A topological insulator is classically modeled as an isotropic material with a magnetoelectric pseudoscalar Ψ existing in its bulk while its surface is charge free and current free. An alternative model is obtained by setting Ψ≡0 and incorporating surface charge and current densities characterized by an admittance γ. Analysis of planewave reflection and refraction due to a topological-insulator half space reveals that the parameters Ψ and γ arise identically in the reflection and transmission coefficients, implying that the two classical models cannot be distinguished on the basis of any scattering scenario. However, as Ψ disappears from the Maxwell equations applicable to any region occupied by the topological insulator, and because surface states exist on topological insulators as protected conducting states, the alternative model must be chosen.
Park, Sungyu; Shin, Junghyun; Kim, Eunseong
2017-02-20
The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase appears between a superconducting and an insulating phase within a range of film thickness and magnetic field. The temperature and electric field scaling analyses are performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents product of νz obtained from the temperature scaling analysis is found to be approximately 0.67 in the entire range of film thickness. On the other hand, an apparent discrepancy is measured in the product of ν(z + 1) by the electric filed analysis. The product values are found to be about 1.37 for the superconducting films and about 1.86 for the metallic films respectively. We find that the discrepancy is the direct consequence of electron heating that introduces additional dissipation channels in the metallic Ta films.
Park, Sungyu; Shin, Junghyun; Kim, Eunseong
2017-02-01
The superconductor–insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase appears between a superconducting and an insulating phase within a range of film thickness and magnetic field. The temperature and electric field scaling analyses are performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents product of νz obtained from the temperature scaling analysis is found to be approximately 0.67 in the entire range of film thickness. On the other hand, an apparent discrepancy is measured in the product of ν(z + 1) by the electric filed analysis. The product values are found to be about 1.37 for the superconducting films and about 1.86 for the metallic films respectively. We find that the discrepancy is the direct consequence of electron heating that introduces additional dissipation channels in the metallic Ta films.
Park, Sungyu; Shin, Junghyun; Kim, Eunseong
2017-01-01
The superconductor–insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase appears between a superconducting and an insulating phase within a range of film thickness and magnetic field. The temperature and electric field scaling analyses are performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents product of νz obtained from the temperature scaling analysis is found to be approximately 0.67 in the entire range of film thickness. On the other hand, an apparent discrepancy is measured in the product of ν(z + 1) by the electric filed analysis. The product values are found to be about 1.37 for the superconducting films and about 1.86 for the metallic films respectively. We find that the discrepancy is the direct consequence of electron heating that introduces additional dissipation channels in the metallic Ta films. PMID:28218296
Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator
Goudarzi, Hadi; Khezerlou, Maryam; Asgarifar, Samin
2017-01-01
Among the potential applications of topological insulators, we investigate theoretically the effect of coexistence of proximity-induced ferromagnetism and superconductivity on the surface states of 3-dimensional topological insulator, where the superconducting electron-hole excitations can be significantly affected by the magnetization of ferromagnetic order. We find that, Majorana mode energy, as a verified feature of TI F/S structure, along the interface sensitively depends on the magnitude...
Dirac-fermion-mediated ferromagnetism in a topological insulator
Checkelsky, Joseph G.; Ye, Jianting; Onose, Yoshinori; Iwasa, Yoshihiro; Tokura, Yoshinori
2012-01-01
Topological insulators are a newly discovered class of materials in which helical conducting modes exist on the surface of a bulk insulator(1-6). Recently, theoretical works have shown that breaking gauge symmetry(7) or time-reversal symmetry(8) in these materials produces exotic states that, if rea
From an array of quantum wires to three-dimensional fractional topological insulators
Sagi, Eran; Oreg, Yuval
2015-11-01
The coupled-wires approach has been shown to be useful in describing two-dimensional strongly interacting topological phases. In this manuscript, we extend this approach to three-dimensions, and construct a model for a fractional strong topological insulator. This topologically ordered phase has an exotic gapless state on the surface, called a fractional Dirac liquid, which cannot be described by the Dirac theory of free fermions. Like in noninteracting strong topological insulators, the surface is protected by the presence of time-reversal symmetry and charge conservation. We show that upon breaking these symmetries, the gapped fractional Dirac liquid presents unique features. In particular, the gapped phase that results from breaking time-reversal symmetry has a halved fractional Hall conductance of the form σx y=1/2 e/2m h if the filling is ν =1 /m . On the other hand, if the surface is gapped by proximity coupling to an s -wave superconductor, we end up with an exotic topological superconductor. To reveal the topological nature of this superconducting phase, we partition the surface into two regions: one with broken time-reversal symmetry and another coupled to a superconductor. We find a fractional Majorana mode, which cannot be described by a free Majorana theory, on the boundary between the two regions. The density of states associated with tunneling into this one-dimensional channel is proportional to ωm -1, in analogy to the edge of the corresponding Laughlin state.
Li, Mingda; Chang, Cui-Zu; Kirby, Brian; Jamer, Michelle E.; Cui, Wenping; Wu, Lijun; Wei, Peng; Zhu, Yimei; Heiman, Don; Li, Ju; Moodera, Jagadeesh; MIT Team; NIST Team; Northeastern University Collaboration; Boston College Collaboration; Brookhaven National Lab Collaboration
Magnetic proximity effect at magnetic insulator / topological insulator interface provides a promising approach to realize low-dissipation quantum devices. However, the commonly used magnetic insulators have in-plane anisotropy hence cannot magnetize topological insulator. Here we report an enhancement of proximity exchange coupling in ferromagnetic insulator / magnetic topological insulator EuS / Sb2-xVxTe3 hybrid heterostructure, where proximity effect is enhanced by a factor of 3 through the Vanadium doping. Moreover, an artificial antiferromagnetic-like structure is created between two strong ferromagnets, which may account for the proximity effect enhancement. The interplay between the proximity effect and doping in hybrid heterostructure provides insights into the engineering of magnetic ordering.
Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3.
Biscaras, J; Bergeal, N; Kushwaha, A; Wolf, T; Rastogi, A; Budhani, R C; Lesueur, J
2010-10-05
Transition metal oxides show a great variety of quantum electronic behaviours where correlations often have an important role. The achievement of high-quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial structures where new electronic orders take place. One of the most striking result in this area is the recent observation of a two-dimensional electron gas at the interface between a strongly correlated Mott insulator LaTiO(3) and a band insulator SrTiO(3). The mechanism responsible for such a behaviour is still under debate. In particular, the influence of the nature of the insulator has to be clarified. In this article, we show that despite the expected electronic correlations, LaTiO(3)/SrTiO(3) heterostructures undergo a superconducting transition at a critical temperature T(c)(onset)~300 mK. We have found that the superconducting electron gas is confined over a typical thickness of 12 nm and is located mostly on the SrTiO(3) substrate.
Matsuzaki, Hiroyuki; Ohkura, Masa-aki; Ishige, Yu; Nogami, Yoshio; Okamoto, Hiroshi
2015-06-01
A photoinduced phase transition was investigated in an organic charge-transfer (CT) complex M2P -TCNQ F4 , [M2P : 5,10-dihydro-5,10-dimethylphenazine, donor (D) molecule; TCNQ F4 : 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, acceptor (A) molecule] by means of femtosecond pump-probe reflection spectroscopy. This is an ionic compound and has a peculiar two-dimensional (2D) molecular arrangement; the same A (or D) molecules arrange along the [100] direction, and A and D molecules alternately arrange along the [111] direction. It results in a strongly anisotropic two-dimensional electronic structure. This compound shows a structural and magnetic phase transition at 122 K below which the two neighboring molecules are dimerized along both the [100] and [111] directions. We demonstrate that two kinds of photoinduced phase transitions occur by irradiation of a femtosecond laser pulse; in the high-temperature lattice-uniform phase, a quasi-one-dimensional (1D) metallic state along the AA(DD) stack is generated, and in the low-temperature lattice-dimerized phase, a quasi-2D metallic state is initially produced and molecular dimerizations are subsequently released. Mixed-stack CT compounds consisting of DA stacks are generally insulators or semiconductors in the ground state. Here, such a dynamical metallization in the DA stack is demonstrated. The release of the dimerizations drives several kinds of coherent oscillations which play an important role in the stabilization of the lattice-dimerized phase. The mechanisms of those photoinduced phase transitions are discussed in terms of the magnitudes of the anisotropic bandwidths and molecular dimerizations along two different directions of the molecular stacks.
A non-commutative framework for topological insulators
Bourne, C.; Carey, A. L.; Rennie, A.
2016-04-01
We study topological insulators, regarded as physical systems giving rise to topological invariants determined by symmetries both linear and anti-linear. Our perspective is that of non-commutative index theory of operator algebras. In particular, we formulate the index problems using Kasparov theory, both complex and real. We show that the periodic table of topological insulators and superconductors can be realized as a real or complex index pairing of a Kasparov module capturing internal symmetries of the Hamiltonian with a spectral triple encoding the geometry of the sample’s (possibly non-commutative) Brillouin zone.
Particle-vortex duality in topological insulators and superconductors
Murugan, Jeff
2016-01-01
We investigate the origins and implications of the duality between topological insulators and topological superconductors in three and four spacetime dimensions. In the latter, the duality transformation can be made at the level of the path integral in the standard way, while in three dimensions, it takes the form of "self-duality in odd dimensions". In this sense, it is closely related to the particle-vortex duality of planar systems. In particular, we use this to elaborate on Son's conjecture that a three dimensional Dirac fermion that can be thought of as the surface mode of a four dimensional topological insulator is dual to a composite fermion.
Gehring, Pascal; Vaklinova, Kristina; Hoyer, Alexander; Benia, Hadj M; Skakalova, Viera; Argentero, Giacomo; Eder, Franz; Meyer, Jannik C; Burghard, Marko; Kern, Klaus
2015-06-29
Three-dimensional topological insulators comprise topologically protected surface states displaying massless, Dirac-like linear dispersion with spin-momentum locking. Electrical conduction through such surface states has been documented to manifest itself in a two-dimensional character of the angle-dependent magnetotransport behavior. Here, we explore the size-dependent electronic properties of nanostructures made of the lead-containing mineral Aleksite, a naturally occurring topological insulator. Compared to its sister compound Kawazulite, a member of the well-studied Tetradymite crystal class, the crystal structure of Aleksite is distinguished by its lack of any counterpart within the group of synthetic topological insulators. Low temperature Hall measurements on thin Aleksite nanosheets reveal a significant carrier mobility on the order of 1000 cm(2)/(Vs), and a high carrier density of n = 3.9 × 10(25) m(-3). Importantly, for Aleksite nanoribbons with a width below 150 nm, a 1D weak antilocalization effect along with 1D universal conductance fluctuations emerges, which transforms into 2D behavior for larger ribbon widths.
Persistent coherence and spin polarization of topological surface states on topological insulators
Pan, Z.-H.; Vescovo, E.; Fedorov, A. V.; Gu, G. D.; Valla, T.
2013-07-01
Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities, which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin- and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room-temperature electronic devices.
Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures
He, Qing Lin; Kou, Xufeng; Grutter, Alexander J.; Yin, Gen; Pan, Lei; Che, Xiaoyu; Liu, Yuxiang; Nie, Tianxiao; Zhang, Bin; Disseler, Steven M.; Kirby, Brian J.; Ratcliff, William, II; Shao, Qiming; Murata, Koichi; Zhu, Xiaodan; Yu, Guoqiang; Fan, Yabin; Montazeri, Mohammad; Han, Xiaodong; Borchers, Julie A.; Wang, Kang L.
2017-01-01
Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Néel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.
Topological Crystalline Insulator in a New Bi Semiconducting Phase
Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.
2016-02-01
Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
Controlling the flow of spin and charge in nanoscopic topological insulators
Van Dyke, John S.; Morr, Dirk K.
2016-02-01
Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic two-dimensional TIs by breaking their time-reversal symmetry via magnetic defects. This allows for the creation of nearly fully spin-polarized charge currents, and the design of highly tunable spin diodes. Similar effects can also be realized in mesoscale hybrid structures in which TIs interface with ferro- or antiferromagnets.
Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy
Directory of Open Access Journals (Sweden)
Xue Qikun
2012-03-01
Full Text Available We summarize our recent scanning tunneling microscopy (STM study of topological insulator thin films grown by molecular beam epitaxy (MBE, which includes the observation of electron standing waves on topological insulator surface and the Landau quantization of topological surface states. The work has provided valuable information to the understanding of intriguing properties of topological insulators, as predicted by theory.
Complex band structure of topological insulator Bi2Se3
Betancourt, J.; Li, S.; Dang, X.; Burton, J. D.; Tsymbal, E. Y.; Velev, J. P.
2016-10-01
Topological insulators are very interesting from a fundamental point of view, and their unique properties may be useful for electronic and spintronic device applications. From the point of view of applications it is important to understand the decay behavior of carriers injected in the band gap of the topological insulator, which is determined by its complex band structure (CBS). Using first-principles calculations, we investigate the dispersion and symmetry of the complex bands of Bi2Se3 family of three-dimensional topological insulators. We compare the CBS of a band insulator and a topological insulator and follow the CBS evolution in both when the spin-orbit interaction is turned on. We find significant differences in the CBS linked to the topological band structure. In particular, our results demonstrate that the evanescent states in Bi2Se3 are non-trivially complex, i.e. contain both the real and imaginary contributions. This explains quantitatively the oscillatory behavior of the band gap obtained from Bi2Se3 (0 0 0 1) slab calculations.
A topological Dirac insulator in a quantum spin Hall phase
Hsieh, David; Qian, Dong; Wray, Lewis; Xia, Yuqi; San Hor, Yew; Cava, Robert; Hasan, Zahid
2009-03-01
When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi1-xSbx single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy, we report the direct observation of massive Dirac particles in the bulk of Bi0.9Sb0.1 and provide a comprehensive mapping of the Dirac insulators gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the topological metal.
Experimental demonstration of anomalous Floquet topological insulator for sound
Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng
2016-01-01
Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states. PMID:27834375
Nanoscale electron transport at the surface of a topological insulator
Bauer, Sebastian; Bobisch, Christian A.
2016-01-01
The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role. PMID:27098939
Nanoscale electron transport at the surface of a topological insulator
Bauer, Sebastian; Bobisch, Christian A.
2016-04-01
The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.
The Electromagnetic Green's Function for Layered Topological Insulators
Crosse, J A; Buhmann, Stefan Yoshi
2015-01-01
The dyadic Green's function of the inhomogeneous vector Helmholtz equation describes the field pattern of a single frequency point source. It appears in the mathematical description of many areas of electromagnetism and optics including both classical and quantum, linear and nonlinear optics, dispersion forces (such as the Casimir and Casimir-Polder forces) and in the dynamics of trapped atoms and molecules. Here, we compute the Green's function for a layered topological insulator. Via the magnetoelectric effect, topological insulators are able to mix the electric, E, and magnetic induction, B, fields and, hence, one finds that the TE and TM polarizations mix on reflection from/transmission through an interface. This leads to novel field patterns close to the surface of a topological insulator.
Inducing magneto-electric response in topological insulator
Energy Technology Data Exchange (ETDEWEB)
Zeng, Lunwu, E-mail: 163.sin@163.com [Jiangsu Key Laboratory for Intelligent Agricultural Equipment, College of Engineering, Nanjing Agricultural University, Nanjing 210031 (China); Song, Runxia [Jiangsu Key Laboratory for Intelligent Agricultural Equipment, College of Engineering, Nanjing Agricultural University, Nanjing 210031 (China); Zeng, Jing [Faculty of Business and Economics, Macquarie University, NSW 2122 (Australia)
2013-02-15
Utilizing electric potential and magnetic scalar potential formulas, which contain zero-order Bessel functions of the first kind and the constitutive relations of topological insulators, we obtained the induced magnetic scalar potentials and induced magnetic monopole charges which are induced by a point charge in topological insulators. The results show that infinite image magnetic monopole charges are generated by a point electric charge. The magnitude of the induced magnetic monopole charges are determined not only by the point electric charge, but also by the material parameters. - Highlights: Black-Right-Pointing-Pointer Electric potential and magnetic scalar potential which contain zero-order Bessel function of the first kind were derived. Black-Right-Pointing-Pointer Boundary conditions of topological insulator were built. Black-Right-Pointing-Pointer Induced monopole charges were worked out.
Chiral topological insulator on Nambu 3-algebraic geometry
Directory of Open Access Journals (Sweden)
Kazuki Hasebe
2014-09-01
Full Text Available Chiral topological insulator (AIII-class with Landau levels is constructed based on the Nambu 3-algebraic geometry. We clarify the geometric origin of the chiral symmetry of the AIII-class topological insulator in the context of non-commutative geometry of 4D quantum Hall effect. The many-body groundstate wavefunction is explicitly derived as a (l,l,l−1 Laughlin–Halperin type wavefunction with unique K-matrix structure. Fundamental excitation is identified with anyonic string-like object with fractional charge 1/(2(l−12+1. The Hall effect of the chiral topological insulators turns out be a color version of Hall effect, which exhibits a dual property of the Hall and spin-Hall effects.
Disorder enabled band structure engineering of a topological insulator surface
Xu, Yishuai; Chiu, Janet; Miao, Lin; He, Haowei; Alpichshev, Zhanybek; Kapitulnik, A.; Biswas, Rudro R.; Wray, L. Andrew
2017-02-01
Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.
Baskan, O; Speetjens, M F M; Metcalfe, G; Clercx, H J H
2015-10-01
Countless theoretical/numerical studies on transport and mixing in two-dimensional (2D) unsteady flows lean on the assumption that Hamiltonian mechanisms govern the Lagrangian dynamics of passive tracers. However, experimental studies specifically investigating said mechanisms are rare. Moreover, they typically concern local behavior in specific states (usually far away from the integrable state) and generally expose this indirectly by dye visualization. Laboratory experiments explicitly addressing the global Hamiltonian progression of the Lagrangian flow topology entirely from integrable to chaotic state, i.e., the fundamental route to efficient transport by chaotic advection, appear non-existent. This motivates our study on experimental visualization of this progression by direct measurement of Poincaré sections of passive tracer particles in a representative 2D time-periodic flow. This admits (i) accurate replication of the experimental initial conditions, facilitating true one-to-one comparison of simulated and measured behavior, and (ii) direct experimental investigation of the ensuing Lagrangian dynamics. The analysis reveals a close agreement between computations and observations and thus experimentally validates the full global Hamiltonian progression at a great level of detail.
Energy Technology Data Exchange (ETDEWEB)
Baskan, O.; Clercx, H. J. H [Fluid Dynamics Laboratory, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Speetjens, M. F. M. [Energy Technology Laboratory, Department of Mechanical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Metcalfe, G. [Commonwealth Scientific and Industrial Research Organisation, Melbourne, Victoria 3190 (Australia); Swinburne University of Technology, Department of Mechanical Engineering, Hawthorn VIC 3122 (Australia)
2015-10-15
Countless theoretical/numerical studies on transport and mixing in two-dimensional (2D) unsteady flows lean on the assumption that Hamiltonian mechanisms govern the Lagrangian dynamics of passive tracers. However, experimental studies specifically investigating said mechanisms are rare. Moreover, they typically concern local behavior in specific states (usually far away from the integrable state) and generally expose this indirectly by dye visualization. Laboratory experiments explicitly addressing the global Hamiltonian progression of the Lagrangian flow topology entirely from integrable to chaotic state, i.e., the fundamental route to efficient transport by chaotic advection, appear non-existent. This motivates our study on experimental visualization of this progression by direct measurement of Poincaré sections of passive tracer particles in a representative 2D time-periodic flow. This admits (i) accurate replication of the experimental initial conditions, facilitating true one-to-one comparison of simulated and measured behavior, and (ii) direct experimental investigation of the ensuing Lagrangian dynamics. The analysis reveals a close agreement between computations and observations and thus experimentally validates the full global Hamiltonian progression at a great level of detail.
Directory of Open Access Journals (Sweden)
E. Kalesaki
2014-01-01
Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.
Abou-Jaoudé, Wassim; Chaves, Madalena; Gouzé, Jean-Luc
2014-12-01
A class of piecewise affine differential (PWA) models, initially proposed by Glass and Kauffman (in J Theor Biol 39:103-129, 1973), has been widely used for the modelling and the analysis of biological switch-like systems, such as genetic or neural networks. Its mathematical tractability facilitates the qualitative analysis of dynamical behaviors, in particular periodic phenomena which are of prime importance in biology. Notably, a discrete qualitative description of the dynamics, called the transition graph, can be directly associated to this class of PWA systems. Here we present a study of periodic behaviours (i.e. limit cycles) in a class of two-dimensional piecewise affine biological models. Using concavity and continuity properties of Poincaré maps, we derive structural principles linking the topology of the transition graph to the existence, number and stability of limit cycles. These results notably extend previous works on the investigation of structural principles to the case of unequal and regulated decay rates for the 2-dimensional case. Some numerical examples corresponding to minimal models of biological oscillators are treated to illustrate the use of these structural principles.
Energy Technology Data Exchange (ETDEWEB)
Setare, M R; Kamali, V, E-mail: rezakord@ipm.ir, E-mail: vkamali1362@gmail.com [Department of Science, Payame Noor University, Bijar (Iran, Islamic Republic of)
2011-11-07
We show that a BTZ black hole solution of cosmological topological massive gravity has a hidden conformal symmetry. In this regard, we consider the wave equation of a massless scalar field propagating in BTZ spacetime and find that the wave equation could be written in terms of the SL(2, R) quadratic Casimir. From the conformal coordinates, the temperatures of the dual conformal field theories (CFTs) could be read directly. Moreover, we compute the microscopic entropy of the dual CFT by the Cardy formula and find a perfect match to the Bekenstein-Hawking entropy of a BTZ black hole. Then, we consider Galilean conformal algebras (GCA), which arises as a contraction of relativistic conformal algebras (x {yields} {epsilon}x, t {yields} t, {epsilon} {yields} 0). We show that there is a correspondence between GCA{sub 2} on the boundary and contracted BTZ in the bulk. For this purpose we obtain the central charges and temperatures of GCA{sub 2}. Then, we compute the microscopic entropy of the GCA{sub 2} by the Cardy formula and find a perfect match to the Bekenstein-Hawking entropy of a BTZ black hole in a non-relativistic limit. The absorption cross section of a near-region scalar field also matches the microscopic absorption cross section of the dual GCA{sub 2}. So we find further evidence that shows correspondence between a contracted BTZ black hole and two-dimensional GCA.
Acoustic topological insulator and robust one-way sound transport
He, Cheng; Ni, Xu; Ge, Hao; Sun, Xiao-Chen; Chen, Yan-Bin; Lu, Ming-Hui; Liu, Xiao-Ping; Chen, Yan-Feng
2016-12-01
Topological design of materials enables topological symmetries and facilitates unique backscattering-immune wave transport. In airborne acoustics, however, the intrinsic longitudinal nature of sound polarization makes the use of the conventional spin-orbital interaction mechanism impossible for achieving band inversion. The topological gauge flux is then typically introduced with a moving background in theoretical models. Its practical implementation is a serious challenge, though, due to inherent dynamic instabilities and noise. Here we realize the inversion of acoustic energy bands at a double Dirac cone and provide an experimental demonstration of an acoustic topological insulator. By manipulating the hopping interaction of neighbouring ’atoms’ in this new topological material, we successfully demonstrate the acoustic quantum spin Hall effect, characterized by robust pseudospin-dependent one-way edge sound transport. Our results are promising for the exploration of new routes for experimentally studying topological phenomena and related applications, for example, sound-noise reduction.
Topological Insulators and Superconductors from D-branes
Ryu, Shinsei
2010-01-01
Realization of topological insulators (TIs) and superconductors (TSCs), such as the quantum spin Hall effect and the Z_2 topological insulator, in terms of D-branes in string theory is proposed. We establish a one-to-one correspondence between the K-theory classification of TIs/TSCs and D-brane charges. The string theory realization of TIs and TSCs comes naturally with gauge interactions, and the Wess-Zumino term of the D-branes gives rise to a gauge field theory of topological nature. This sheds light on TIs and TSCs beyond non-interacting systems, and the underlying topological field theory description thereof. In particular, our string theory realization includes the honeycomb lattice Kitaev model in two spatial dimensions, and its higher-dimensional extensions.
Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
2016-01-01
In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the m...
Spontaneous breaking of time-reversal symmetry in topological insulators
Energy Technology Data Exchange (ETDEWEB)
Karnaukhov, Igor N., E-mail: karnaui@yahoo.com
2017-06-21
Highlights: • Proposed a new approach for description of phase transitions in topological insulators. • Considered the mechanism of spontaneous breaking of time-reversal symmetry in topological insulators. • The Haldane model can be implemented in real compounds of the condensed matter physics. - Abstract: The system of spinless fermions on a hexagonal lattice is studied. We have considered tight-binding model with the hopping integrals between the nearest-neighbor and next-nearest-neighbor lattice sites, that depend on the direction of the link. The links are divided on three types depending on the direction, the hopping integrals are defined by different phases along the links. The energy of the system depends on the phase differences, the solutions for the phases, that correspond to the minimums of the energy, lead to a topological insulator state with the nontrivial Chern numbers. We have analyzed distinct topological states and phase transitions, the behavior of the chiral gapless edge modes, have defined the Chern numbers. The band structure of topological insulator (TI) is calculated, the ground-state phase diagram in the parameter space is obtained. We propose a novel mechanism of realization of TI, when the TI state is result of spontaneous breaking of time-reversal symmetry due to nontrivial stable solutions for the phases that determine the hopping integrals along the links and show that the Haldane model can be implemented in real compounds of the condensed matter physics.
Topology of Bands in Solids : From Insulators to Dirac Matter
Carpentier, David
2014-01-01
Talk at Seminaire Poincare (Bourbaphy), Paris, June 2014; Bloch theory describes the electronic states in crystals whose energies are distributed as bands over the Brillouin zone. The electronic states corresponding to a (few) isolated energy band(s) thus constitute a vector bundle. The topological properties of these vector bundles provide new characteristics of the corresponding electronic phases. We review some of these properties in the case of (topological) insulators and semi-metals.
2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes.
Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V; Valencia, Sergio; Ünal, Akin A; Rader, Oliver; Fischer, Saskia F
2016-06-07
Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼10(19) cm(-3)) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
Zhao, Y. X.; Wang, Z. D.
2014-02-01
A topology-intrinsic connection between the stabilities of Fermi surfaces (FSs) and topological insulators/superconductors (TIs/TSCs) is revealed. First, through revealing the topological difference of the roles played by the time-reversal (or particle-hole) symmetry respectively on FSs and TIs/TSCs, a one-to-one relation between the topological types of FSs and TIs/TSCs is rigorously derived by two distinct methods with one relying on the direct evaluation of topological invariants and the other on K theory. Secondly, we propose and prove a general index theorem that relates the topological charge of FSs on the natural boundary of a TI/TSC to its bulk topological number. In the proof, FSs of all codimensions for all symmetry classes and topological types are systematically constructed by Dirac matrices. Moreover, implications of the general index theorem on the boundary quasiparticles are also addressed.
Interfacing 2D and 3D Topological Insulators: Bi(111) Bilayer on Bi2Te3
Hirahara, Toru; Bihlmayer, Gustav; Sakamoto, Yusuke; Yamada, Manabu; Miyazaki, Hidetoshi; Kimura, Shin-Ichi; Blügel, Stefan; Hasegawa, Shuji
2012-02-01
Topological insulators (TI) are insulating materials but have metallic edge states that carry spin currents and are robust against nonmagnetic impurities [1]. While there have been a large number of reports on three-dimensional (3D) TI, only few works have been done in terms of two-dimensional (2D) TI. In the present paper, we report the successful formation of bilayer Bi, which was theoretically predicted to be a 2D TI [2]. We deposited bilayer Bi on a 3D TI Bi2Te3, which the lattice mismatch is very small. From angle-resolved photoemission spectroscopy measurements and ab initio calculations, the electronic structure of the system can be understood as an overlap of the band dispersions of bilayer Bi and Bi2Te3. Our results show that the Dirac cone is actually robust against nonmagnetic perturbations and imply a unique situation where the topologically protected one- and two-dimensional edge states are coexisting at the surface [3]. [0pt] [1] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).[0pt] [2] S. Murakami, Phys. Rev. Lett. 97, 236805 (2006).[0pt] [3] T. Hirahara et al., Phys. Rev. Lett. 107, 166801 (2011).
Energy Technology Data Exchange (ETDEWEB)
Trivedi, Tanuj, E-mail: tanuj@utexas.edu; Sonde, Sushant; Movva, Hema C. P.; Banerjee, Sanjay K., E-mail: banerjee@ece.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
2016-02-07
We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.
Energy Technology Data Exchange (ETDEWEB)
Zuo, Zheng-Wei, E-mail: zuozw@163.com [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Kang, Da-wei [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); Wang, Zhao-Wu [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Li, Liben [School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China)
2016-08-26
The tunneling junction between one-dimensional topological superconductor and integer (fractional) topological insulator (TI), realized via point contact, is investigated theoretically with bosonization technology and renormalization group methods. For the integer TI case, in a finite range of edge interaction parameter, there is a non-trivial stable fixed point which corresponds to the physical picture that the edge of TI breaks up into two sections at the junction, with one side coupling strongly to the Majorana fermion and exhibiting perfect Andreev reflection, while the other side decouples, exhibiting perfect normal reflection at low energies. This fixed point can be used as a signature of the Majorana fermion and tested by nowadays experiment techniques. For the fractional TI case, the universal low-energy transport properties are described by perfect normal reflection, perfect Andreev reflection, or perfect insulating fixed points dependent on the filling fraction and edge interaction parameter of fractional TI. - Highlights: • Tunneling junctions between topological superconductor and topological insulator are investigated. • There is a non-trivial stable fixed point in integer topological insulator case at low energies. • The edge of topological insulator breaks up into two sections at the junction. • One side couples strongly to the Majorana fermion and exhibits perfect Andreev reflection. • The other side decouples and exhibits perfect normal reflection.
Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-01-25
The electronic properties of silicene are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that the combination of an electric field with intrinsic spin orbit interaction leads to quantum phase transitions at the charge neutrality point, providing a tool to experimentally tune the topological state. Silicene constitutes a model system for exploring the spin and valley physics not accessible in graphene due to the small spin orbit interaction.
Topological phononic insulator with robust pseudospin-dependent transport
Xia, Bai-Zhan; Liu, Ting-Ting; Huang, Guo-Liang; Dai, Hong-Qing; Jiao, Jun-Rui; Zang, Xian-Guo; Yu, De-Jie; Zheng, Sheng-Jie; Liu, Jian
2017-09-01
Topological phononic states, which facilitate unique acoustic transport around defects and disorders, have significantly revolutionized our scientific cognition of acoustic systems. Here, by introducing a zone folding mechanism, we realize the topological phase transition in a double Dirac cone of the rotatable triangular phononic crystal with C3 v symmetry. We then investigate the distinct topological edge states on two types of interfaces of our phononic insulators. The first one is a zigzag interface which simultaneously possesses a symmetric mode and an antisymmetric mode. Hybridization of the two modes leads to a robust pseudospin-dependent one-way propagation. The second one is a linear interface with a symmetric mode or an antisymmetric mode. The type of mode is dependent on the topological phase transition of the phononic insulators. Based on the rotatability of triangular phononic crystals, we consider several complicated contours defined by the topological zigzag interfaces. Along these contours, the acoustic waves can unimpededly transmit without backscattering. Our research develops a route for the exploration of the topological phenomena in experiments and provides an excellent framework for freely steering the acoustic backscattering-immune propagation within topological phononic structures.
Dirac Fermions without bulk backscattering in rhombohedral topological insulators
Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto
2015-03-01
The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).
Exploration of New Principles in Spintronics Based on Topological Insulators (Option 1)
2012-05-14
Final Report Title: Exploration of New Principles in Spintronics Based on Topological Insulators (Option 1... Spintronics Based on Topological Insulators 5a. CONTRACT NUMBER FA23861014103 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Yoichi Ando...quantum phenomena in topological insulators for conceiving devices with unprecedented functionalities. 15. SUBJECT TERMS Physics, Spintronics
Unconventional quantum Hall effect in Floquet topological insulators
Tahir, M.
2016-07-27
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.
Unconventional quantum Hall effect in Floquet topological insulators.
Tahir, M; Vasilopoulos, P; Schwingenschlögl, U
2016-09-28
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text].
Topological Insulators and Superconductors for Innovative Devices
2015-03-20
and Technology (OIST), Okinawa, May 14, 2014. 6. Yoichi Ando, “Superconducting Topological Insulators”, Theo Murphy International Scientific...D.; Hor, Y. S.; Cava, R. J.; Hasan, M. Z. Nat. Phys. 2009, 5, 398−402. (20) Dash, S. P.; Sharma, S.; Patel, R. S.; Jong, M. P.; Jansen , R. Nature
Quantum transport in magnetic topological insulator thin films.
Lu, Hai-Zhou; Zhao, An; Shen, Shun-Qing
2013-10-04
The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid decrease from the quantized plateau in the Hall conductance, accompanied by a peak in the longitudinal conductance as a function of the gate voltage. Here, we present a quantum transport theory with an effective model for magnetic topological insulator thin films. The good agreement between theory and experiment reveals that the measured transport originates from a topologically nontrivial conduction band which, near its band edge, has concentrated Berry curvature and a local maximum in group velocity. The indispensable roles of the broken structure inversion and particle-hole symmetries are also revealed. The results are instructive for future experiments and transport studies based on first-principles calculations.
Quantum and Classical Approaches in Graphene and Topological Insulators
DEFF Research Database (Denmark)
Posvyanskiy, Vladimir
the spectrum of these exotic “spin-1” excitations and confirm that they indeed can exist in graphene-based materials in the presence of the Coulomb interactions. In the second part of our work 2D topological insulators are examined from the perspective of the semiclassical theory. In spite of quantum...... mechanical study, this approach can give simple and pictorial explanation of the topological edge states. In our work we find the semiclassical orbits for the samples of different geometries and also discuss the influence of the quantum effects, the Berry phase, on the semiclassical electron dynamics......Graphene and topological insulators are novel materials which have recently attracted a lot of attention. Due to their peculiar fundamental properties a number of new and yet unknown effects arise in these materials. One of such examples are triplet excitations, magnons, which may be observed...
Topological Quantum Information Processing Mediated Via Hybrid Topological Insulator Structures
2013-11-13
Matthew J. Gilbert, and Benjamin L. Lev, "Imaging Topologically Protected Transport with Quantum Degenerate Gases," Physical Review B 85 205422...from the Entanglement Spectrum," Physical Review B: Rapid Communications 86, 041401 (2012). 3 Qinglei Meng, Taylor L. Hughes, Matthew J. Gilbert...34 Physical Review B 86, 155110 (2012). 4 Qinglei Meng, Vasudha Shivamoggi, Taylor L. Hughes, Matthew J. Gilbert and S. Vishveshwara, "Fractional Spin
Institute of Scientific and Technical Information of China (English)
Xinru Li[1; Ying Dai[1; Yandong Ma[1; Wei Wei[1; Lin Yu[1; Baibiao Huang[2
2015-01-01
A new family of two-dimensional （2D） topological insulators （TIs） comprising g-TIA （A = N, P, As, and Sb） monolayers constructed by T1 and group-V elements is predicted by first-principles calculations and molecular-dynamics （MD） simulations. The geometric stability, band inversion, nontrivial edge states, and electric polarity are investigated to predict the large-gap quantum spin Hall insulator and Rashba-Dresselhaus effects. The MD results reveal that the g-T1A monolayers remain stable even at room temperature. The g-T1A （A = As, Sb） monolayers become TIs under the influence of strong spin-orbit couplings with large bulk bandgaps of 131 and 268 meV, respectively. A single band inversion is observed in each g-T1A （A = As, Sb） monolayer, indicating a nontrivial topological nature. Furthermore, the topological edge states are described by introducing a sufficiently wide zigzag-nanoribbon. A Dirac point in the middle of the bulk gap connects the valence- and conduction-band edges. The Fermi velocity near the Dirac point with a linear band dispersion is -0.51 × 106 m/s, which is comparable to that of many other 2D nanomaterials. More importantly, owing to the broken inversion symmetry normal to the plane of the g-T1A films, a promising Rashba-Dresselhaus effect with the parameter up to 0.85 eV-A is observed in the g-T1A （A = As, Sb） monolayers. Our findings regarding 2D topological g-T1A monolayers with room-temperature bandgaps, intriguing topological edge states, and a promising Rashba-Dresselhaus effect are of fundamental value and suggest potential applications in nanoelectronic devices.
Antiferroelectric Topological Insulators in Orthorhombic A MgBi Compounds (A =Li , Na, K)
Monserrat, Bartomeu; Bennett, Joseph W.; Rabe, Karin M.; Vanderbilt, David
2017-07-01
We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an A B C family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these A B C compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.
Spatially-protected Topology and Group Cohomology in Band Insulators
Alexandradinata, A.
This thesis investigates band topologies which rely fundamentally on spatial symmetries. A basic geometric property that distinguishes spatial symmetry regards their transformation of the spatial origin. Point groups consist of spatial transformations that preserve the spatial origin, while un-split extensions of the point groups by spatial translations are referred to as nonsymmorphic space groups. The first part of the thesis addresses topological phases with discretely-robust surface properties: we introduce theories for the Cnv point groups, as well as certain nonsymmorphic groups that involve glide reflections. These band insulators admit a powerful characterization through the geometry of quasimomentum space; parallel transport in this space is represented by the Wilson loop. The non-symmorphic topology we study is naturally described by a further extension of the nonsymmorphic space group by quasimomentum translations (the Wilson loop), thus placing real and quasimomentum space on equal footing -- here, we introduce the language of group cohomology into the theory of band insulators. The second part of the thesis addresses topological phases without surface properties -- their only known physical consequences are discrete signatures in parallel transport. We provide two such case studies with spatial-inversion and discrete-rotational symmetries respectively. One lesson learned here regards the choice of parameter loops in which we carry out transport -- the loop must be chosen to exploit the symmetry that protects the topology. While straight loops are popular for their connection with the geometric theory of polarization, we show that bent loops also have utility in topological band theory.
Spin Generation Via Bulk Spin Current in Three Dimensional Topological Insulators
Peng, Xingyue
To date, charge transport and spin generation in three-dimensional topological insulators (3D TIs) are primarily modeled as a single-surface phenomenon. We propose a new mechanism of spin generation where the role of the insulating yet topologically non-trivial bulk becomes explicit: an external electric field creates a transverse pure spin current through the bulk of a 3D TI, which transports spins between the top and bottom surfaces and leads to spin accumulation on both. The surface spin density and charge current are then proportional to the spin relaxation time, which for a sufficiently high disorder level can be extended by nonmagnetic scattering analogous to the Dyakonov-Perel spin relaxation mechanism. This new spin generation mechanism suggests a distinct and practical strategy for the enhancement of surface spin polarization by increasing nonmagnetic impurity concentration. Numerical results obtained by coherent potential approximation (CPA) based on a 4-band lattice model confirm that this spin generation mechanism originates from the unique topological connection of the top and bottom surfaces and is absent in other two dimensional systems such as graphene, even though they possess a similar Dirac cone-type dispersion.
Reduced density matrix and order parameters of a topological insulator
Yu, Wing Chi; Li, Yan Chao; Sacramento, P. D.; Lin, Hai-Qing
2016-12-01
It has been recently proposed that the reduced density matrix may be used to derive the order parameter of a condensed matter system. Here we propose order parameters for the phases of a topological insulator, specifically a spinless Su-Schrieffer-Heeger (SSH) model, and consider the effect of short-range interactions. All the derived order parameters and their possible corresponding quantum phases are verified by the entanglement entropy and electronic configuration analysis results. The order parameter appropriate to the topological regions is further proved by calculating the Berry phase under twisted boundary conditions. It is found that the topological nontrivial phase is robust to the introduction of repulsive intersite interactions and can appear in the topological trivial parameter region when appropriate interactions are added.
Spin-transfer torque generated by a topological insulator
Mellnik, A. R.
2014-07-23
Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.
Spin-transfer torque generated by a topological insulator.
Mellnik, A R; Lee, J S; Richardella, A; Grab, J L; Mintun, P J; Fischer, M H; Vaezi, A; Manchon, A; Kim, E-A; Samarth, N; Ralph, D C
2014-07-24
Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications.
Directory of Open Access Journals (Sweden)
Vincenzo Parente
2014-03-01
Full Text Available The scattering of Dirac electrons by topological defects could be one of the most relevant sources of resistance in graphene and at the boundary surfaces of a three-dimensional topological insulator (3D TI. In the long wavelength, continuous limit of the Dirac equation, the topological defect can be described as a distortion of the metric in curved space, which can be accounted for by a rotation of the Gamma matrices and by a spin connection inherited with the curvature. These features modify the scattering properties of the carriers. We discuss the self-energy of defect formation with this approach and the electron cross-section for intra-valley scattering at an edge dislocation in graphene, including corrections coming from the local stress. The cross-section contribution to the resistivity, ρ, is derived within the Boltzmann theory of transport. On the same lines, we discuss the scattering of a screw dislocation in a two-band 3D TI, like Bi1-xSbx, and we present the analytical simplified form of the wavefunction for gapless helical states bound at the defect. When a 3D TI is sandwiched between two even-parity superconductors, Dirac boundary states acquire superconductive correlations by proximity. In the presence of a magnetic vortex piercing the heterostructure, two Majorana states are localized at the two interfaces and bound to the vortex core. They have a half integer total angular momentum each, to match with the unitary orbital angular momentum of the vortex charge.
Quantum magnetotransport properties of ultrathin topological insulator films
Tahir, M.
2013-01-30
We study the quantum magnetotransport in ultrathin topological insulator films in an external magnetic field considering hybridization between the upper and lower surfaces of the film. We investigate the two possible mechanisms for splitting of Landau levels, Zeeman and hybridization effects, and show that their interplay leads to minima in the collisional and Hall conductivities with a metal-to-insulator phase transition at the charge neutrality point. Hall plateaus arise at unusual multiples of e2/h . Evidence of a quantum phase transition for the zeroth and splitting of the higher Landau levels is found from the temperature and magnetic field dependences of the transport.
The topological Anderson insulator phase in the Kane-Mele model.
Orth, Christoph P; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L
2016-04-05
It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase.
Quantum anomalous Hall effect in topological insulator memory
Energy Technology Data Exchange (ETDEWEB)
Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); Tan, S. G. [Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore); Siu, Z. B. [Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore (Singapore)
2015-05-07
We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.
All-Si Valley-Hall Photonic Topological Insulator
Ma, Tzuhsuan
2016-01-01
An all-Si photonic structure emulating the quantum-valley-Hall effect is proposed. We show that it acts as a photonic topological insulator (PTI), and that an interface between two such PTIs can support edge states that are free from scattering. The conservation of the valley degree of freedom enables efficient in- and out-coupling of light between the free space and the photonic structure. The topological protection of the edge waves can be utilized for designing arrays of resonant time- delay photonic cavities that do not suffer from reflections and cross-talk.
Weak Topological Insulators in PbTe/SnTe superlattice
Yang, Gang; Liu, Junwei; Fu, Liang; Duan, Wenhui; Liu, Chaoxing
2014-03-01
It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper, we investigate (PbTe)m(SnTe)2n-m superlattices along the [001] direction and find a robust weak topological insulator phase for a large variety of layer numbers m and 2 n - m . We confirm this topologically non-trivial phase by calculating Z2 topological invariants and topological surface states based on the first-principles calculations. We show that the folding of Brillouin zone due to the superlattice structure plays an essential role in inducing topologically non-trivial phases in this system. This mechanism can be generalized to other systems in which band inversion occurs at multiple momenta, and gives us a brand-new way to engineer topological materials in artificial structures. We acknowledge support from the Ministry of Science and Technology of China and the National Natural Science Foundation of China. LF is supported by the DOE Office of Basic Energy Sciences.
Quantum magnetotransport properties of topological insulators under strain
Tahir, M.
2012-08-15
We present a detailed theoretical investigation of the quantum magnetotransport properties of topological insulators under strain. We consider an external magnetic field perpendicular to the surface of the topological insulator in the presence of strain induced by the substrate. The strain effects mix the lower and upper surface states of neighboring Landau levels into two unequally spaced energy branches. Analytical expressions are derived for the collisional conductivity for elastic impurity scattering in the first Born approximation. We also calculate the Hall conductivity using the Kubo formalism. Evidence for the beating of Shubnikov–de Haas oscillations is found from the temperature and magnetic field dependence of the collisional and Hall conductivities. In the regime of a strong magnetic field, the beating pattern is replaced by a splitting of the magnetoresistance peaks due to finite strain energy. These results are in excellent agreement with recent HgTe transport experiments.
Characterizing the structure of topological insulator thin films
Energy Technology Data Exchange (ETDEWEB)
Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue; Samarth, Nitin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
2015-08-01
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb){sub 2}Te{sub 3} and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO{sub 3} and the use of capping layers to protect topological insulator films from oxidation and exposure.
Dynamical Axion Field in a Magnetic Topological Insulator Superlattice
Wang, Jing; Lian, Biao; Zhang, Shou-Cheng
We propose that the dynamical axion field can be realized in a magnetic topological insulator superlattice or a topological paramagnetic insulator. The magnetic fluctuations of these systems produce a pseudoscalar field which has an axionic coupling to the electromagnetic field, and thus it gives a condensed-matter realization of the axion electrodynamics. Compared to the previously proposed dynamical axion materials where a long range antiferromagnetic order is required, the systems proposed here have the advantage that only an uniform magnetization or a paramagnetic state is needed for the dynamic axion. We further propose several experiments to detect such a dynamical axion field. This work is supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Contract No. DE-AC02-76SF00515.
Characterizing the structure of topological insulator thin films
Directory of Open Access Journals (Sweden)
Anthony Richardella
2015-08-01
Full Text Available We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.
Nanometric holograms based on a topological insulator material
Yue, Zengji; Xue, Gaolei; Liu, Juan; Wang, Yongtian; Gu, Min
2017-05-01
Holography has extremely extensive applications in conventional optical instruments spanning optical microscopy and imaging, three-dimensional displays and metrology. To integrate holography with modern low-dimensional electronic devices, holograms need to be thinned to a nanometric scale. However, to keep a pronounced phase shift modulation, the thickness of holograms has been generally limited to the optical wavelength scale, which hinders their integration with ultrathin electronic devices. Here, we break this limit and achieve 60 nm holograms using a topological insulator material. We discover that nanometric topological insulator thin films act as an intrinsic optical resonant cavity due to the unequal refractive indices in their metallic surfaces and bulk. The resonant cavity leads to enhancement of phase shifts and thus the holographic imaging. Our work paves a way towards integrating holography with flat electronic devices for optical imaging, data storage and information security.
Zero-bias photocurrent in ferromagnetic topological insulator.
Ogawa, N; Yoshimi, R; Yasuda, K; Tsukazaki, A; Kawasaki, M; Tokura, Y
2016-07-20
Magnetic interactions in topological insulators cause essential modifications in the originally mass-less surface states. They offer a mass gap at the Dirac point and/or largely deform the energy dispersion, providing a new path towards exotic physics and applications to realize dissipation-less electronics. The nonequilibrium electron dynamics at these modified Dirac states unveil additional functions, such as highly efficient photon to spin-current conversion. Here we demonstrate the generation of large zero-bias photocurrent in magnetic topological insulator thin films on mid-infrared photoexcitation, pointing to the controllable band asymmetry in the momentum space. The photocurrent spectra with a maximal response to the intra-Dirac-band excitations can be a sensitive measure for the correlation between Dirac electrons and magnetic moments.
Enhanced thermoelectric power in ultrathin topological insulators with magnetic doping
Tahir, M.
2014-09-07
We derive analytical expressions for the magnetic moment and orbital magnetization as well as for the corresponding thermal conductivity and thermoelectric power of a topological insulator film. We demonstrate enhancement of the thermoelectric transport for decreasing film thickness and for application of an exchange field due to the tunable band gap. Combining hybridization and exchange field is particularly suitable for heat to electric energy conversion and thermoelectric cooling.
Space group constraints on weak indices in topological insulators
Varjas, Dániel; de Juan, Fernando; Lu, Yuan-Ming
2017-07-01
Lattice translation symmetry gives rise to a large class of "weak" topological insulators (TIs), characterized by translation-protected gapless surface states and dislocation bound states. In this work we show that space group symmetries lead to constraints on the weak topological indices that define these phases. In particular, we show that screw rotation symmetry enforces the Hall conductivity in planes perpendicular to the screw axis to be quantized in multiples of the screw rank, which generally applies to interacting systems. We further show that certain 3D weak indices associated with quantum spin Hall effects (class AII) are forbidden by the Bravais lattice and by glide or even-fold screw symmetries. These results put strong constraints on weak TI candidates in the experimental and numerical search for topological materials, based on the crystal structure alone.
Energy Technology Data Exchange (ETDEWEB)
Tselev, Alexander [ORNL; Strelcov, Evgheni [Southern Illinois University; Luk' yanchuk, Prof. Igor A. [University of Picardie Jules Verne, Amiens, France; Ivanov, Ilia N [ORNL; Budai, John D [ORNL; Tischler, Jonathan Zachary [ORNL; Jones, Keith M [ORNL; Proksch, Roger [Asylum Research, Santa Barbara, CA; Kalinin, Sergei V [ORNL; Kolmakov, Andrei [ORNL
2010-01-01
Formation of ferroelastic twin domains in VO_2 nanosystems can strongly affect local strain distributions, and hence couple to the strain-controlled metal-insulator transition. Here we report polarized-light optical and scanning microwave microscopy studies of interrelated ferroelastic and metal-insulator transitions in single-crystalline vanadium dioxide (VO_2) quasi-two-dimensional (quasi-2D) nanoplatelets (NPls). In contrast to quasi-1D single-crystalline nanobeams, the geometric frustration results in emergence of several possible families of ferroelastic domains in NPls, thus allowing systematic studies of strain-controlled transitions in the presence of geometrical frustration. We demonstrate possibility of controlling the ferroelastic domain population by the strength of the NPl-substrate interaction, mechanical stress, and by the NPl lateral size. Ferroelastic domain species and domain walls are identified based on standard group-theoretical considerations. Using variable temperature microscopy, we imaged the development of domains of metallic and semiconducting phases during the metal-insulator phase transition and non-trivial strain-driven reentrant domain formation. A long-range reconstruction of ferroelastic structures accommodating metal-insulator domain formation has been observed. These studies illustrate that complete picture of the phase transitions in single-crystalline and disordered VO_2 structures can be drawn only if both ferroelastic and metal-insulator strain effects are taken into consideration and understood.
Insulators and metals with topological order and discrete symmetry breaking
Chatterjee, Shubhayu; Sachdev, Subir
2017-05-01
Numerous experiments have reported discrete symmetry breaking in the high-temperature pseudogap phase of the hole-doped cuprates, including breaking of one or more of lattice rotation, inversion, and time-reversal symmetries. In the absence of translational symmetry breaking or topological order, these conventional order parameters cannot explain the gap in the charged fermion excitation spectrum in the antinodal region. Zhao et al. [L. Zhao, D. H. Torchinsky, H. Chu, V. Ivanov, R. Lifshitz, R. Flint, T. Qi, G. Cao, and D. Hsieh, Nat. Phys. 12, 32 (2016), 10.1038/nphys3517] and Jeong et al. [J. Jeong, Y. Sidis, A. Louat, V. Brouet, and P. Bourges, Nat. Commun. 8, 15119 (2017), 10.1038/ncomms15119] have also reported inversion and time-reversal symmetry breaking in insulating Sr2IrO4 similar to that in the metallic cuprates, but coexisting with Néel order. We extend an earlier theory of topological order in insulators and metals, in which the topological order combines naturally with the breaking of these conventional discrete symmetries. We find translationally invariant states with topological order coexisting with both Ising-nematic order and spontaneous charge currents. The link between the discrete broken symmetries and the topological-order-induced pseudogap explains why the broken symmetries do not survive in the confining phases without a pseudogap at large doping. Our theory also connects to the O(3) nonlinear sigma model and CP1 descriptions of quantum fluctuations of the Néel order. In this framework, the optimal doping criticality of the cuprates is primarily associated with the loss of topological order.
Takagaki, Y.
2016-09-01
Quantum interference in scattering from a potential offset is investigated in narrow strips of two-dimensional systems described by the Bernevig-Hughes-Zhang Hamiltonian. Attention is focused on the situations where the transmission in the scattering region takes place around the Dirac point of topological insulators when the hybridization energy gap is eliminated by utilizing transverse interference. Apart from conventional periodic transmission modulation that takes place when the length of the potential offset region is varied, resonant disappearances of reflection occur for short potential offsets. The anomalous resonance appears not only for the four-band Hamiltonian but also for the two-band Hamiltonian, manifesting the generality of the phenomenon. Evanescent-like waves excited around the potential steps are indicated to be responsible for the anomalous behavior. The interference states can couple with each other and generic reduction in the amplitude of transmission modulation occurs upon coupling with the periodic modulation.
Effective Model for Massless Dirac Electrons on a Surface of Weak Topological Insulators
Arita, Takashi; Takane, Yositake
2014-12-01
In a typical situation, gapless surface states of a three-dimensional (3D) weak topological insulator (WTI) appear only on the sides, leaving the top and bottom surfaces gapped. To describe massless Dirac electrons emergent on such side surfaces of a WTI, a two-dimensional (2D) model consisting of a series of one-dimensional helical channels is usually employed. However, an explicit derivation of such a model from a 3D bulk Hamiltonian has been lacking. Here, we explicitly derive an effective 2D model for the WTI surface states starting from the Wilson-Dirac Hamiltonian for the bulk WTI and establish a firm basis for the hitherto hypothesized 2D model. We show that the resulting 2D model accurately reproduces the excitation spectrum of surface Dirac electrons determined by the 3D model. We also show that the 2D model is applicable to a side surface with atomic steps.
Kalesaki, E.; Delerue, C.; de Morais Smith, C.; Beugeling, W.; Allan, G.; Vanmaekelbergh, D.A.M.
2014-01-01
We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattic
Slager, R.J.; Mesaros, A.; Juricic, V.; Zaanen, J.
2014-01-01
Topological band-insulators (TBIs) represent a new class of quantum materials that in the presence of time-reversal symmetry (TRS) feature an insulating bulk bandgap together with metallic edge or surface states protected by a Z 2 topological invariant [1,2,3,4]. Recently, an extra layer in this Z 2
Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films
Rogacheva, E. I.; Budnik, A. V.; Nashchekina, O. N.; Meriuts, A. V.; Dresselhaus, M. S.
2017-07-01
Bi2Te3 compound and Bi2Te3-based solid solutions have attracted much attention as promising thermoelectric materials for refrigerating devices. The possibility of enhancing the thermoelectric efficiency in low-dimensional structures has stimulated studies of Bi2Te3 thin films. Now, interest in studying the transport properties of Bi2Te3 has grown sharply due to the observation of special properties characteristic of three-dimensional (3D) topological insulators in Bi2Te3. One of the possible manifestations of quantum size effects in two-dimensional structures is an oscillatory behavior of the dependences of transport properties on film thickness, d. The goal of this work is to summarize our earlier experimental results on the d-dependences of transport properties of Bi2Te3 thin films obtained by thermal evaporation in a vacuum on glass substrates, and to present our new results of theoretical calculations of the oscillations periods within the framework of the model of an infinitely deep potential well, which takes into account the dependence of the Fermi energy on d and the contribution of all energy subbands below the Fermi level to the conductivity. On the basis of the data obtained, some general regularities and specificity of the quantum size effects manifestation in 3D topological insulators are established.
β - Ag2Te: A topological insulator with strong anisotropy
Wang, Lan; Sulaev, Azat; Ren, Peng; Xia, Bin; Lin, Qinghua; Yu, Ting; Qiu, Caiyu; Zhang, Shuang-Yuan; Han, Ming-Yong; Li, Zhipeng; Zhu, Wei Guang; Wu, Qingyu; Feng, Yuan Ping; Shen, Lei; Shen, Shun-Qing
2013-03-01
We present evidence of topological surface states in β-Ag2Te through first-principles calculations, periodic quantum interference effect and ambipolar electric field effect in single crystalline nanoribbon. Our first-principles calculations show that β-Ag2Te is a topological insulator with a gapless Dirac cone with strong anisotropy. To experimentally probe the topological surface state, we synthesized high quality β-Ag2Te nanoribbons and performed electron transport measurements. The coexistence of pronounced Aharonov-Bohm oscillations and weak Altshuler-Aronov-Spivak oscillations clearly demonstrates coherent electron transport around the perimeter of β-Ag2Te nanoribbon and therefore the existence of topological surface states, which is further supported by the ambipolar electric field effect for devices fabricated by β-Ag2Te nanoribbons. The experimentally confirmed topological surface states and the theoretically predicted isotropic Dirac cone of β-Ag2Te suggest that the material may be a promising material for fundamental study and future spintronic devices. RCA-08/018 (Singapore), MOE2010-T2-2-059 (Singapore), HKU705150P (Hong Kong), NTU-SUG M4080513
Spin-dependent Peltier effect in 3D topological insulators
Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard
2013-03-01
The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.
Dirac topological insulator in the dz2 manifold of a honeycomb oxide
Lado, J. L.; Pardo, V.
2016-09-01
We show by means of ab initio calculations and tight-binding modeling that an oxide system based on a honeycomb lattice can sustain topologically nontrivial states if a single orbital dominates the spectrum close to the Fermi level. In such a situation, the low-energy spectrum is described by two Dirac equations that become nontrivially gapped when spin-orbit coupling (SOC) is switched on. We provide one specific example but the recipe is general. We discuss a realization of this starting from a conventional spin-1/2 honeycomb antiferromagnet whose states close to the Fermi energy are dz2 orbitals. Switching off magnetism by atomic substitution and ensuring that the electronic structure becomes two-dimensional is sufficient for topologicality to arise in such a system. By deriving a tight-binding Wannier Hamiltonian, we find that the gap in such a model scales linearly with SOC, opposed to other oxide-based topological insulators, where smaller gaps tend to appear by construction of the lattice. We show that the quantum spin Hall state in this system survives in the presence of off-plane magnetism and the orbital magnetic field and we discuss its Landau level spectra, showing that our recipe provides a dz2 realization of the Kane-Mele model.
Cheng, Bing; Wu, Liang; Kushwaha, S. K.; Cava, R. J.; Armitage, N. P.
2016-11-01
Topological surface states have been extensively observed via optics in thin films of topological insulators. However, in typical thick single crystals of these materials, bulk states are dominant and it is difficult for optics to verify the existence of topological surface states definitively. In this Rapid Communication, we study the charge dynamics of the newly formulated bulk-insulating Sn-doped Bi1.1Sb0.9Te2S crystal by using time-domain terahertz spectroscopy. This compound shows much better insulating behavior than any other bulk-insulating topological insulators reported previously. The transmission can be enhanced an amount which is 5 % of the zero-field transmission by applying magnetic field to 7 T, an effect which we believe is due to the suppression of topological surface states. This suppression is essentially independent of the thicknesses of the samples, showing the two-dimensional nature of the transport. The suppression of surface states in field allows us to use the crystal slab itself as a reference sample to extract the surface conductance, mobility, charge density, and scattering rate. Our measurements set the stage for the investigation of phenomena out of the semiclassical regime, such as the topological magnetoelectric effect.
Classification and characterization of topological insulators and superconductors
Mong, Roger
Topological insulators (TIs) are a new class of materials which, until recently, have been overlooked despite decades of study in band insulators. Like semiconductors and ordinary insulators, TIs have a bulk gap, but feature robust surfaces excitations which are protected from disorder and interactions which do not close the bulk gap. TIs are distinguished from ordinary insulators not by the symmetries they possess (or break), but by topological invariants characterizing their bulk band structures. These two pictures, the existence of gapless surface modes, and the nontrivial topology of the bulk states, yield two contrasting approaches to the study of TIs. At the heart of the subject, they are connected by the bulk-boundary correspondence, relating bulk and surface degrees of freedom. In this work, we study both aspects of topological insulators, at the same time providing an illumination to their mysterious connection. First, we present a systematic approach to the classification of bulk states of systems with inversion-like symmetries, deriving a complete set of topological invariants for such ensembles. We find that the topological invariants in all dimensions may be computed algebraically via exact sequences. In particular, systems with spatial inversion symmetries in one-, two-, and three-dimensions can be classified by, respectively, 2, 5, and 11 integer invariants. The values of these integers are related to physical observables such as polarization, Hall conductivity, and magnetoelectric coupling. We also find that, for systems with “antiferromagnetic symmetry,” there is a Z2 classification in three-dimensions, and hence a class of “antiferromagnetic topological insulators” (AFTIs) which are distinguished from ordinary antiferromagnets. From the perspective of the bulk, AFTI exhibits the quantized magnetoelectric effect, whereas on the surface, gapless one-dimensional chiral modes emerge at step-defects. Next, we study how the surface spectrum can
Tunable topological insulators with a single spin-polarized surface Dirac cone
Hsieh, David
2010-03-01
The topological insulator is a fundamentally new time-reversal-invariant topologically ordered phase of matter, which exhibits exotic quantum-Hall-like behavior even in the absence of an applied magnetic field. These materials are characterized by a spin-orbit coupling induced bulk energy gap and an odd number of spin-polarized Dirac cones localized on their surfaces. In this talk, I will review the first experimental realization of the topological insulator in Bi1-xSbx [1,2], and then report our recent experimental discovery and findings of a new generation of topological insulators with order-of-magnitude larger bulk band gaps and a single spin-helical surface Dirac cone [3,4]. I will also discuss a novel `effective gating' technique that can be used to optimize the insulating properties of the bulk, and to tune the Dirac carrier density on the surfaces of these new topological insulators [5]. These experiments pave the way for future transport based studies of topological insulator devices, and offer the potential for a graphene-like revolution to take place for topological insulators. [1] ``A topological Dirac insulator in a quantum spin Hall phase'', D. Hsieh et al., Nature 452, 970 (2008). [2] ``Observation of unconventional quantum spin textures in topological insulators'', D. Hsieh et al., Science 323, 919 (2009). [3] ``Observation of a large-gap topological-insulator class with a single Dirac cone on the surface'', Y. Xia et al., Nature Phys. 5, 398 (2009). [4] ``Observation of time-reversal-protected single-Dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3'', D. Hsieh et al., Phys. Rev. Lett., 103, 146401 (2009). [5] ``A tunable topological insulator in the spin helical Dirac transport regime'', D. Hsieh et al., Nature 460, 1101 (2009).
Costanza, E. F.; Costanza, G.
2016-12-01
Continuum partial differential equations are obtained from a set of discrete stochastic evolution equations of both non-Markovian and Markovian processes and applied to the diffusion within the context of the lattice gas model. A procedure allowing to construct one-dimensional lattices that are topologically equivalent to two-dimensional lattices is described in detail in the case of a triangular lattice. This example shows the general features that possess the procedure and extensions are also suggested in order to provide a wider insight in the present approach.
Costanza, E. F.; Costanza, G.
2017-02-01
Continuum partial differential equations are obtained from a set of discrete stochastic evolution equations of both non-Markovian and Markovian processes and applied to the diffusion within the context of the lattice gas model. A procedure allowing to construct one-dimensional lattices that are topologically equivalent to two-dimensional lattices is described in detail in the case of a hexagonal lattice which has the particular feature that need four types of dynamical variables. This example shows additional features to the general procedure and some extensions are also suggested in order to provide a wider insight in the present approach.
Stehno, M. P.; Orlyanchik, V.; Nugroho, C. D.; Ghaemi, P.; Brahlek, M.; Koirala, N.; Oh, S.; Van Harlingen, D. J.
2016-01-01
Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.
A symmetry-respecting topologically-ordered surface phase of 3d electron topological insulators
Metlitski, Max A.; Kane, C. L.; Fisher, Matthew P. A.
2013-01-01
A 3d electron topological insulator (ETI) is a phase of matter protected by particle-number conservation and time-reversal symmetry. It was previously believed that the surface of an ETI must be gapless unless one of these symmetries is broken. A well-known symmetry-preserving, gapless surface termination of an ETI supports an odd number of Dirac cones. In this paper we deduce a symmetry-respecting, gapped surface termination of an ETI, which carries an intrinsic 2d topological order, Moore-R...
Topological insulators with second and third-neighbor couplings
de Brito Vieira Filho, Anilton; Costa Filho, Raimundo N.
2017-07-01
The energy band of a topological insulator is calculated taken into account second and third neighbors. A tight-binding model based on the Bernevig-Hughes-Zhang (BHZ) approach for quantum wells is used to calculate the energies. The BHZ model is characterized by the mass term M (q) = Δ - Bq2. In the microscopic theory used here, the mass term is E- (q) = Δ - B (sin2 qx a / 2 +sin2 qy a / 2). That is modified when second and/or third neighbors are included in the model. As a consequence, depending on the parameters used the range where the material is an insulator is changed.
Yang, Lei; Mukhopadhyay, Alolika; Jiao, Yucong; Yong, Qiang; Chen, Liao; Xing, Yingjie; Hamel, Jonathan; Zhu, Hongli
2017-08-17
Thermally insulating materials, made from earth-abundant and sustainable resources, are highly desirable in the sustainable construction of energy efficient buildings. Cellulose from wood has long been recognized for these characteristics. However, cellulose can be a flammability hazard, and for construction this has been addressed via chemical treatment such as that with halogen and/or phosphorus, which leads to further environmental concerns. Fortunately, the structure of cellulose lends itself well to chemical modification, giving great potential to explore interaction with other compounds. Thus, in this study, cellulose nanofibers (CNFs) were nano-wrapped with ultrathin 1T phase molybdenum disulfide (MoS2) nanosheets via chemical crosslinking, to produce an aerogel. Thermal and combustion characterization revealed highly desirable properties (thermal conductivity k = 28.09 mW m(-1) K(-1), insulation R value = 5.2, limit oxygen index (LOI) = 34.7%, total heat release = 0.4 MJ m(-2)). Vertical burning tests also demonstrated excellent fire retardant and self-extinguishing capabilities. Raman spectra further revealed that MoS2 remained unscathed after 30 seconds of burning in a 1300 °C butane flame. Considering the inherently low density of this material, there is significant opportunity for its usage in a number of insulating applications demanding specific fire resistance properties.
Interacting topological insulator and emergent grand unified theory
You, Yi-Zhuang; Xu, Cenke
2015-03-01
Motivated by the Pati-Salam grand unified theory [J. C. Pati and A. Salam, Phys. Rev. D 10, 275 (1974), 10.1103/PhysRevD.10.275], we study (4 +1 )d topological insulators with SU (4 ) ×SU (2) 1×SU (2) 2 symmetry, whose (3 +1 )d boundary has 16 flavors of left-chiral fermions, which form representations (4 ,2 ,1 ) and (4 ¯,1 ,2 ) . The key result we obtain is that, without any interaction, this topological insulator has a Z classification, namely, any quadratic fermion mass operator at the (3 +1 )d boundary is prohibited by the symmetries listed above; while under interaction, this system becomes trivial, namely, its (3 +1 )d boundary can be gapped out by a properly designed short-range interaction without generating nonzero vacuum expectation value of any fermion bilinear mass, or in other words, its (3 +1 )d boundary can be driven into a "strongly-coupled symmetric gapped (SCSG) phase." Based on this observation, we propose that after coupling the system to a dynamical SU (4 ) ×SU (2) 1×SU (2) 2 lattice gauge field, the Pati-Salam GUT can be fully regularized as the boundary states of a (4 +1 )d topological insulator with a thin fourth spatial dimension, the thin fourth dimension makes the entire system generically a (3 +1 )d system. The mirror sector on the opposite boundary will not interfere with the desired GUT, because the mirror sector is driven to the SCSG phase by a carefully designed interaction and is hence decoupled from the GUT.
Exotic quantum phase transitions of strongly interacting topological insulators
Slagle, Kevin; You, Yi-Zhuang; Xu, Cenke
2015-03-01
Using determinant quantum Monte Carlo simulations, we demonstrate that an extended Hubbard model on a bilayer honeycomb lattice has two novel quantum phase transitions. The first is a quantum phase transition between the weakly interacting gapless Dirac fermion phase and a strongly interacting fully gapped and symmetric trivial phase, which cannot be described by the standard Gross-Neveu model. The second is a quantum critical point between a quantum spin Hall insulator with spin Sz conservation and the previously mentioned strongly interacting fully gapped phase. At the latter quantum critical point the single-particle excitations remain gapped, while spin and charge gaps both close. We argue that the first quantum phase transition is related to the Z16 classification of the topological superconductor 3He-B phase with interactions, while the second quantum phase transition is a topological phase transition described by a bosonic O (4 ) nonlinear sigma model field theory with a Θ term.
Quantum spin Hall effect and topological insulators for light
Bliokh, Konstantin Y
2015-01-01
We show that free-space light has intrinsic quantum spin-Hall effect (QSHE) properties. These are characterized by a non-zero topological spin Chern number, and manifest themselves as evanescent modes of Maxwell equations. The recently discovered transverse spin of evanescent modes demonstrates spin-momentum locking stemming from the intrinsic spin-orbit coupling in Maxwell equations. As a result, any interface between free space and a medium supporting surface modes exhibits QSHE of light with opposite transverse spins propagating in opposite directions. In particular, we find that usual isotropic metals with surface plasmon-polariton modes represent natural 3D topological insulators for light. Several recent experiments have demonstrated transverse spin-momentum locking and spin-controlled unidirectional propagation of light at various interfaces with evanescent waves. Our results show that all these experiments can be interpreted as observations of the QSHE of light.
NMR probe of metallic states in nanoscale topological insulators.
Koumoulis, Dimitrios; Chasapis, Thomas C; Taylor, Robert E; Lake, Michael P; King, Danny; Jarenwattananon, Nanette N; Fiete, Gregory A; Kanatzidis, Mercouri G; Bouchard, Louis-S
2013-01-11
A 125Te NMR study of bismuth telluride nanoparticles as a function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from the single to the bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420 K, micrometer particles do so only below 200 K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.
Electrified magnetic catalysis in three-dimensional topological insulators
Gorbar, E. V.; Miransky, V. A.; Shovkovy, I. A.; Sukhachov, P. O.
2016-09-01
The gap equations for the surface quasiparticle propagators in a slab of three-dimensional topological insulator in external electric and magnetic fields perpendicular to the slab surfaces are analyzed and solved. A different type of magnetic catalysis is revealed with the dynamical generation of both Haldane and Dirac gaps. Its characteristic feature manifests itself in the crucial role that the electric field plays in dynamical symmetry breaking and the generation of a Dirac gap in the slab. It is argued that, for a sufficiently large external electric field, the ground state of the system is a phase with a homogeneous surface charge density.
Bulk saturable absorption in topological insulator thin films
Gopal, Radha Krishna; Ambast, Deepak K. S.; Singh, Sourabh; Sarkar, Jit; Pal, Bipul; Mitra, Chiranjib
2017-07-01
We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on a quartz substrate, using an open aperture z-scan technique. We observed saturable absorption with a low saturation intensity in as deposited thin films. Past results from the literature are inconclusive in establishing whether the saturable absorption in TI is coming from surface states or the bulk. Specifically designed experiments with magnetically doped TI samples allow us to attribute the saturable absorption characteristic of TI to the bulk states. Detailed experimental procedures and possible explanation of observed results have been discussed.
Charge puddles in a completely compensated topological insulator
Rischau, C. W.; Ubaldini, A.; Giannini, E.; van der Beek, C. J.
2016-07-01
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
Electrified magnetic catalysis in 3D topological insulators
Gorbar, E V; Shovkovy, I A; Sukhachov, P O
2016-01-01
The gap equations for the surface quasiparticle propagators in a slab of three-dimensional topological insulator in external electric and magnetic fields perpendicular to the slab surfaces are analyzed and solved. A new type of magnetic catalysis is revealed with the dynamical generation of both Haldane and Dirac gaps. Its characteristic feature manifests itself in the crucial role that the electric field plays in dynamical symmetry breaking and the generation of a Dirac gap in the slab. It is argued that, for a sufficiently large external electric field, the ground state of the system is a phase with a homogeneous surface charge density.
Men'shov, V. N.; Tugushev, V. V.; Chulkov, E. V.
2016-10-01
We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k • p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.
Conducting state of GeTe by defect-induced topological insulating order
Kim, Jinwoong; Jhi, Seung-Hoon
2012-02-01
Topological insulating order protected by time-reversal symmetry is robust under structural disorder. Interestingly, recent studies on phase change materials like GeSbTe showed that their topological insulating order is sensitive to atomic stacking sequences. It was also shown that their structural phase transition is correlated with topological insulating order. GeTe, a well-known phase change material, is trivial insulator in its equilibrium structure. In this study, we discuss how atomic defects such as Ge tetrahedral defect observed in amorphous GeTe can change its topological insulating order based on first-principles calculations and model Hamiltonian. We also investigated the critical density of such tetrahedral defects to induce topological insulating order in GeTe. Our study will help explore hidden orders in GeTe.
Transport studies of mesoscopic and magnetic topological insulators
Kandala, Abhinav
Topological Insulators (TI) are a novel class of materials that are ideally insulating in the bulk, but have gapless, metallic states at the surface. These surface states have very exciting properties such as suppressed backscattering and spin-momentum locking, which are of great interest for research efforts towards dissipation-less electronics and spintronics. The popular thermo-electrics from the Bi chalcogenide family -- Bi2Se3 and Bi 2Te3 -- have been experimentally demonstrated to be promising candidate TI materials, and form the chosen material system for this dissertation research. The first part of this dissertation research focuses on low temperature magneto-transport measurements of mesoscopic topological insulator devices (Chapter 3). The top-down patterning of epitaxial thin films of Bi2Se 3 and Bi2Te3 (that are plagued with bulk conduction) is motivated, in part, by an effort to enhance the surface-to-volume ratio in mesoscopic channels. At cryogenic temperatures, transport measurements of these devices reveal periodic conductance fluctuations in straight channel devices, despite the lack of any explicit patterning of the TI film into a ring or a loop. A careful analysis of the surface morphology and comparison with the transport data then demonstrate that scattering off the edges of triangular plateaus at the surface leads to the creation of Aharonov-Bohm electronic orbits responsible for the periodicity. Another major focus of this dissertation work is on combining topological insulators with magnetism. This has been shown to open a gap in the surface states leading to possibilities of magnetic "gating" and the realization of dissipation-less transport at zero-field, amongst several other exotic quantum phenomena. In this dissertation, I present two different schemes for probing these effects in electrical transport devices -- interfacing with insulating ferromagnets (Chapter 4) and bulk magnetic doping (Chapter 5). In Chapter 4, I shall present the
Ferromagnetism and glassiness on the surface of topological insulators
Liu, Chun-Xiao; Roy, Bitan; Sau, Jay D.
2016-12-01
We investigate the nature of the ordering among magnetic adatoms, randomly deposited on the surface of topological insulators. Restricting ourselves to dilute impurity and weak coupling (between itinerant fermion and magnetic impurities) limit, we show that for arbitrary amount of chemical doping away from the apex of the surface Dirac cone the magnetic impurities tend to arrange themselves in a spin-density-wave pattern, with the periodicity approximately π /kF , where kF is the Fermi wave vector, when magnetic moment for impurity adatoms is isotropic. However, when magnetic moment possesses strong Ising or easy-axis anisotropy, pursuing both analytical and numerical approaches we show that the ground state is ferromagnetic for low to moderate chemical doping, despite the fragmentation of the system into multiple ferromagnetic islands. For high doping away from the Dirac point as well, the system appears to fragment into many ferromagnetic islands, but the magnetization in these islands is randomly distributed. Such magnetic ordering with net zero magnetization is referred to here as ferromagnetic spin glass, which is separated from the pure ferromagnet state by a first order phase transition. We generalize our analysis for cubic topological insulators (supporting three Dirac cones on a surface) and demonstrate that the nature of magnetic orderings and the transition between them remains qualitatively the same. We also discuss the possible relevance of our analysis to recent experiments.
Quantum tunneling between Chern states in a Topological Insulator
Liu, Minhao; Wang, Wudi; Richardella, Anthony R.; Kandala, Abhinav; Li, Jian; Yazdani, Ali; Samarth, Nitin; Ong, N. P.
The tunneling of a macroscopic object through a barrier is a quintessentially quantum phenomenon important in field theory, low-temperature physics and quantum computing. Progress has been achieved in experiments on Josephson junctions, molecular magnets, and domain wall dynamics. However, a key feature - rapid expansion of the true vacuum triggered by a tunneling event is virtually unexplored. Here we report the detection of large jumps in the Hall resistance Ryx in a magnetized topological insulator which result from tunneling out of a metastable topological state. In the TI, the conducting electrons are confined to surface Dirac states. When magnetized, the TI enters the quantum anomalous Hall insulator state in which Ryx is strictly quantized. If the magnetic field is reversed, the sample is trapped in a metastable state. We find that, below 145 mK, Ryx exhibits abrupt jumps as large as one quantum unit on time-scales under 1 ms. If the temperature is raised, the escape rate is suppressed consistent with tunneling in the presence of dissipation. The jumps involve expansion of the thermodynamically stable state bubble over macroscopic lengths, but dissipation limits the final size. The results uncover novel effects of dissipation on macroscopic tunneling. We acknowledge support from DARPA SPAWAR (N66001-11-1-4110) and the Gordon and Betty Moore Foundations (GBMF4539).
Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator
Goudarzi, H.; Khezerlou, M.; Asgarifar, S.
2017-03-01
Among the potential applications of topological insulators, we investigate theoretically the effect of coexistence of proximity-induced ferromagnetism and superconductivity on the surface states of 3-dimensional topological insulator, where the superconducting electron-hole excitations can be significantly affected by the magnetization of ferromagnetic order. We find that, Majorana mode energy, as a verified feature of TI F/S structure, along the interface sensitively depends on the magnitude of magnetization mzfs in FS region, while its slope in perpendicular incidence presents steep and no change. Since the superconducting gap is renormalized by a factor η (mzfs) , hence Andreev reflection is more or less suppressed, and, in particular, resulting subgap tunneling conductance is more sensitive to the magnitude of magnetizations in FS and F regions. Furthermore, an interesting scenario happens at the antiparallel configuration of magnetizations mzf and mzfs resulting in magnetoresistance in N/F/FS junction, which can be controlled and decreased by tuning the magnetization magnitude in FS region.
Samarium Hexaboride: The First True 3D Topological Insulator?
Wolgast, Steven G.
The recent theoretical prediction of a topologically protected surface state in the mixed-valent insulator SmB6 has motivated a series of charge transport studies, which are presented here. It is first studied using a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. As the material is cooled below 4 K, it exhibits a crossover from thermally activated bulk transport to metallic surface conduction with a fully insulating bulk. The robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB6, is strong evidence for the topological insulator (TI) metallic surface states predicted for this material. This resolves a decades-old puzzle surrounding the low-temperature behavior of SmB6. Next, the magnetotransport properties of the surface are investigated using a Corbino disk geometry, which can directly measure the conductivity of individual surfaces. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles, due primarily to changes in the carrier density. The low mobility value accounts for the failure so far to observe Shubnikov-de Haas oscillations below 95 T. Small variations in the mobility and temperature dependence suggest a suppression of Kondo scattering from native oxide-layer magnetic moments. At low fields, a dynamical field-sweep-rate-dependent hysteretic behavior is observed. It persists at the slowest sweep rates, and cannot be explained by quantum interference corrections; it is likely due to extrinsic effects such as the magnetocaloric effect or glassy ordering of the native oxide moments. Pulsed magnetic field measurements up to 60 T at temperatures throughout the crossover regime clearly distinguish the surface magnetoresistance from the bulk magnetoresistance. The bulk magnetoresistance is due to a reduction in the bulk gap with increasing magnetic field. Finally, small subsurface cracks formed in SmB6 via
Transport Experiments of Topological Insulators and Dirac Semimetals
Xiong, Jun
The progress in understanding the Berry phase of Bloch electrons in crystals has triggered tremendous interest in discovering novel topological phases of solids. The integration of the Berry curvature in the Brillouin zone can categorize solids into phases such as topological insulators (TI), Dirac semimetals (DSM) and Weyl semimetals (WSM). These new phases have unconventional electronic states at the boundaries, such as the spin polarized electrons on the surface of a three-dimensional TI. Under proper engineering, such edge states can carry a dissipationless current, leading to a great application potential in low-power devices and topological quantum computers. Besides TI, the newly discovered Dirac and Weyl semimetals represent another example in which electrons have a linear energy-momentum dispersion. The paired Weyl nodes have opposite chiralities, and can be regarded as positive and negative monopoles of the Berry flux. Under the time-reversal, inversion and certain crystal symmetries, as in the cases of Cd3As2 and Na3Bi, the Weyl nodes with different chiralities can coexist at the same point in the Brillouin zone and the crystal becomes a Dirac semimetal. Such semimetals provide platforms for some phenomena in high energy physics, such as the chiral anomaly effect. The above predictions lie at the heart of our experimental study of topological materials. We synthesized a topological insulator, Bi2Te2 Se, with a suppressed bulk carrier density. Analysis of the prominent Shubnikov-de Haas oscillations in Bi2Te2Se demonstrates clear evidence for the Dirac surface electrons and their pi Berry phase. We also leveraged the ionic liquid gating technique to bring the chemical potential 50% closer to the Dirac point. Additionally, we studied two types of Na3Bi, a DSM. The first type with a high chemical potential exhibits a large and linear magnetoresistance (MR), implying a transport lifetime steeply tuned by the magnetic field. In the second type of Na3Bi with a
Lei, Ting; Poon, Andrew W
2013-01-28
We demonstrate two-dimensional optical trapping and manipulation of 1 μm and 2.2 μm polystyrene particles in an 18 μm-thick fluidic cell at a wavelength of 1565 nm using the recently proposed Silicon-on-insulator Multimode-interference (MMI) waveguide-based ARrayed optical Tweezers (SMART) technique. The key component is a 100 μm square-core silicon waveguide with mm length. By tuning the fiber-coupling position at the MMI waveguide input facet, we demonstrate various patterns of arrayed optical tweezers that enable optical trapping and manipulation of particles. We numerically simulate the physical mechanisms involved in the arrayed trap, including the optical force, the heat transfer and the thermal-induced microfluidic flow.
In situ Raman spectroscopy of topological insulator BiTe films with varying thickness
DEFF Research Database (Denmark)
Wang, C.; Zhu, X.; Nilsson, Louis;
2013-01-01
Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV...
Tunable Dirac Electron and Hole Self-Doping of Topological Insulators Induced by Stacking Defects.
Aramberri, Hugo; Cerdá, Jorge I; Muñoz, M Carmen
2015-06-10
Via density functional theory based calculations we show that self-doping of the surface Dirac cones in three-dimensional Bi2X3 (X = Se, Te) topological insulators can be tuned by controlling the sequence of stacking defects in the crystal. Twin boundaries inside the Bi2X3 bulk drive either n- or p-type self-doping of the (0001) topological surface states, depending on the precise orientation of the twin. The surface doping may achieve values up to 300 meV and can be controlled by the number of defects and their relative position with respect to the surface. Its origin relies on the spontaneous polarization generated by the dipole moments associated with the lattice defects. Our findings open the route to the fabrication of Bi2X3 surfaces with tailored surface charge and spin densities in the absence of external electric fields. In addition, in a thin film geometry two-dimensional electron and hole Dirac gases with the same spin-helicity coexist at opposite surfaces.
Energy Technology Data Exchange (ETDEWEB)
Guo, Junji; Liao, Wenhu, E-mail: whliao2007@aliyun.com; Zhao, Heping [College of Physics, Mechanical and Electrical Engineering, Jishou University, Jishou 416000 (China); Zhou, Guanghui [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China)
2014-01-14
We theoretically investigate the electrically controllable spin polarization and selective efficiency of the edge state Dirac electron in a two-dimensional topological insulator (TI) sandwiched between ferromagnetic (FM) electrodes by using the method of Keldysh nonequilibrium Green's function. A nearly full spin polarization of the topological edge state with giant inversion of ∼80% is observed, which is much higher than the value previously reported. Moreover, the selective efficiency for spin-up electrons under the modulation of the parallel configuration of FM electrodes has been demonstrated to be larger than 95% for the first time, while that for spin-down electrons in the antiparallel case is higher than 90% in a wide energy range, owing to the inter-edge spin tunneling induced backscattering and spin dephasing effect. The obtained results may provide a deeper understanding of the TI edge states and a valuable guidance to design spin switch and filter with high on-off speed and selective efficiency based on TIs.
New quantum spin Hall insulator in two-dimensional MoS2 with periodically distributed pores.
Liu, Peng-Fei; Zhou, Liujiang; Frauenheim, Thomas; Wu, Li-Ming
2016-03-01
MoS2, one of the transition metal dichalcogenides (TMDs), has gained a lot of attention due to its excellent semiconductor characteristics and potential applications. Here, based on density functional theory methods, we predict a novel 2D QSH insulator in the porous allotrope of monolayer MoS2 (g-MoS2), consisting of MoS2 squares and hexagons. g-MoS2 has a nontrivial gap as large as 109 meV, comparable with previously reported 1T'-MoS2 (80 meV) and so-MoS2 (25 meV). We demonstrate that the origin of the 2D QSH effect in g-MoS2 originates from the pure d-d band inversion, different from the conventional band inversion between s-p, p-p or d-p orbitals. The new polymorph greatly enriches the TMD family and its stabilities are confirmed using phonon spectrum analysis. In particular, its porous structure endows it with the potential for efficient gas separation and energy storage applications.
A high-temperature ferromagnetic topological insulating phase by proximity coupling
Energy Technology Data Exchange (ETDEWEB)
Katmis, Ferhat; Lauter, Valeria; Nogueira, Flavio S.; Assaf, Badih A.; Jamer, Michelle E.; Wei, Peng; Satpati, Biswarup; Freeland, John W.; Eremin, Ilya; Heiman, Don; Jarillo-Herrero, Pablo; Moodera, Jagadeesh S.
2016-05-09
Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry(1,)2, wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices(3-5). Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena(6,7). In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi2Se3) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin-orbit interaction and the spin-momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends similar to 2 nm into the Bi2Se3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator(2,8) could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies.
Li, Mingda; Chang, Cui-Zu; Kirby, Brian. J.; Jamer, Michelle E.; Cui, Wenping; Wu, Lijun; Wei, Peng; Zhu, Yimei; Heiman, Don; Li, Ju; Moodera, Jagadeesh S.
2015-08-01
Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS /Sb2 -xVx Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb2 Te3 ) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
Interface electronic structure at the topological insulator-ferrimagnetic insulator junction
Kubota, Y.; Murata, K.; Miyawaki, J.; Ozawa, K.; Onbasli, M. C.; Shirasawa, T.; Feng, B.; Yamamoto, Sh; Liu, R.-Y.; Yamamoto, S.; Mahatha, S. K.; Sheverdyaeva, P.; Moras, P.; Ross, C. A.; Suga, S.; Harada, Y.; Wang, K. L.; Matsuda, I.
2017-02-01
An interface electron state at the junction between a three-dimensional topological insulator film, Bi2Se3, and a ferrimagnetic insulator film, Y3Fe5O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film.
Magnetic Topological Insulators and Quantum Anomalous Hall Effect
Kou, Xufeng
The engineering of topological surface states is a key to realize applicable devices based on topological insulators (TIs). Among various proposals, introducing magnetic impurities into TIs has been proven to be an effective way to open a surface gap and integrate additional ferromagnetism with the original topological order. In this Dissertation, we study both the intrinsic electrical and magnetic properties of the magnetic TI thin films grown by molecular beam epitaxy. By doping transition element Cr into the host tetradymite-type V-VI semiconductors, we achieve robust ferromagnetic order with a strong perpendicular magnetic anisotropy. With additional top-gating capability, we realize the electric-field-controlled ferromagnetism in the magnetic TI systems, and demonstrate such magneto-electric effects can be effectively manipulated, depending on the interplays between the band topology, magnetic exchange coupling, and structural engineering. Most significantly, we report the observation of quantum anomalous Hall effect (QAHE) in the Cr-doped (BiSb)2Te3 samples where dissipationless chiral edge conduction is realized in the macroscopic millimeter-size devices without the presence of any external magnetic field, and the stability of the quantized Hall conductance of e2/h is well-maintained as the film thickness varies across the 2D hybridization limit. With additional quantum confinement, we discover the metal-to-insulator switching between two opposite QAHE states, and reveal the universal QAHE phase diagram in the thin magnetic TI samples. In addition to the uniform magnetic TIs, we further investigate the TI/Cr-doped TI bilayer structures prepared by the modulation-doped growth method. By controlling the magnetic interaction profile, we observe the Dirac hole-mediated ferromagnetism and develop an effective way to manipulate its strength. Besides, the giant spin-orbit torque in such magnetic TI-based heterostructures enables us to demonstrate the current
Jing, Lei
Novel two-dimensional materials with weak interlayer Van der Waals interaction are fantastic platforms to study novel physical phenomena. This thesis describes our investigation on two different Van der Waals materials: graphene and bismuth selenide with calcium doping (CaxBi 2-xSe3, x as the doping level) in the topological insulator family. Firstly, we characterize the electrical transport behaviors of high-quality substrate-supported bilayer graphene devices with suspended metal gates. The device exhibits a transport gap induced by external electric field with an on/off ratio of 20,000, which could be explained by variable range hoping between localized states or disordered charge puddles. At large magnetic field, the device presents quantum Hall plateau at fractional values of conductance quantum, which arises from the equilibration of edge states between differentially doped regions. Secondly, we present our study on the electronic transport of CaxBi 2-xSe3 thin films, which are three-dimensional topological insulators and coupled with superconducting leads. In these novel Josephson transistors, we observe different characteristic features by energy dispersion spectrum (EDS) and Raman spectroscopy, and the weak suppression in the critical current Ic. Thirdly, we explore the thermal expansion of suspended graphene. By in-situ scanning electron microscope (SEM), we measure the thickness-dependence of graphene's negative thermal expansion coefficient (TEC). We propose that there is a competitive relation between the intrinsic TEC and the friction from the substrate and the graphene. Lastly, in collaboration with Dr. Nikolai Kalugin from New Mexico Tech., we explore the graphene's application as a quantum Hall effect infrared photodetector. This graphene-based detector can be operated at higher temperature (liquid nitrogen) and wider frequency than the previous implementations of quantum Hall detector.
Quantum phenomena in transport measurements of topological insulator nanostructures (Review Article)
Energy Technology Data Exchange (ETDEWEB)
Fang, Lei; Kwok, Wai-Kwong
2014-04-01
We review the recent experimental advances on quantum phenomena in transport measurements of topological insulators with emphasis on quantum oscillation, weak antilocalization and Aharonov-Bohm effect and Altshuler-Aronov-Spivak effect. Following a brief introduction on the topic, we discuss the identification of the topological surface state based on quantum phenomena. Research prospect of topological insulators is described at the end of this article.
Scattering-Free Optical Edge States between Heterogeneous Photonic Topological Insulators
Ma, Tzuhsuan
2015-01-01
We propose a set of three simple photonic platforms capable of emulating quantum topologically insulating phases corresponding to Hall, spin-Hall, and valley-Hall effects. It is shown that an interface between any two of these heterogeneous photonic topological insulators supports scattering-free surface states. Spin and valley degrees of freedom characterizing such topologically protected surface waves determine their unique pathways through complex photonic circuits comprised of multiple heterogeneous interfaces.
Quantum phenomena in transport measurements of topological insulator nanostructures (Review Article)
Fang, Lei; Kwok, Wai-Kwong
2014-04-01
We review the recent experimental advances on quantum phenomena in transport measurements of topological insulators with emphasis on quantum oscillation, weak antilocalization and Aharonov-Bohm effect and Altshuler-Aronov-Spivak effect. Following a brief introduction on the topic, we discuss the identification of the topological surface state based on quantum phenomena. Research prospect of topological insulators is described at the end of this article.
Ryu, Gihun; Son, Kwanghyo; Schütz, Gisela
2016-04-01
Two dimensional (2D) topological insulators (TIs) with a quantum spin Hall (QSH) effect feature edge states (ESs) that are topologically protected from backscattering. Bi2TeI with 2D Bismuth bilayer is one of the representative compounds of weak topological insulator. However, nobody has prepared a high quality single crystal with a millimeter size so far. Here, we have successfully synthesized a large single crystal sized up to "millimeter (~5×5 mm2)" using the Bismuth self-flux method. And we also found its giant anisotropy transport behavior in Bi2TeI of a 2D TI constructed from nontrivial Bi bilayers (Quantum Spin Hall phase) capped by a trivial Te-Bi-I layer.
Transport in three-dimensional topological insulators: Theory and experiment
Culcer, Dimitrie
2012-02-01
This paper reviews recent theoretical and experimental work on transport due to the surface states of three-dimensional topological insulators. The theoretical focus is on longitudinal transport in the presence of an electric field, including Boltzmann transport, quantum corrections and weak localization, as well as longitudinal and Hall transport in the presence of both electric and magnetic fields and/or magnetizations. Special attention is paid to transport at finite doping, and to the π-Berry phase, which leads to the absence of backscattering, Klein tunneling and half-quantized Hall response. Signatures of surface states in ordinary transport and magnetotransport are identified. The review also covers transport experiments of the past years, tracing its evolution from the initial obscuring of surface transport by bulk transport to the increasing success of experimental work in identifying transport due to the surface states. Current and likely future experimental challenges are given prominence and the present status of the field is assessed.
Topological insulator in junction with ferromagnets: Quantum Hall effects
Chudnovskiy, A. L.; Kagalovsky, V.
2015-06-01
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations in the FM leads, which inspires the use of FM-TI-FM junctions as electrical and as heat switches in spintronic devices. Thermal and electrical Hall coefficients are calculated as functions of the magnetization directions in ferromagnets and the spin-relaxation time in TI. Both the Hall voltage and the transverse temperature gradient decrease but are not completely suppressed even at very short spin-relaxation times. The Hall coefficients turn out to be independent of the spin-relaxation time for symmetric configuration of FM leads.
Realizing topological Mott insulators from the RKKY interaction
Liu, Tianhan; Douçot, Benoît; Le Hur, Karyn
2016-05-01
We engineer topological insulating phases in a fermion-fermion mixture on the honeycomb lattice, without resorting to artificial gauge fields or spin-orbit couplings and considering only local interactions. Essentially, upon integrating out the fast component (characterized by a larger hopping amplitude) in a finite region of dopings, we obtain an effective interaction between the slow fermions at half-filling, which acquires a Haldane mass with opposite parity in the two valleys of the Dirac cones, thus triggering a quantum anomalous Hall effect. We carefully analyze the competition between the induced Semenoff-type mass (producing charge density wave orders in real space) versus the Haldane mass (quantum anomalous Hall phase), as a function of the chemical potential of the fast fermions. If the second species involves spin-1/2 particles, this interaction may induce a quantum spin Hall phase. Such fermion-fermion mixtures can be realized in optical lattices or in graphene heterostructures.
Quantum Oscillation in Narrow-Gap Topological Insulators.
Zhang, Long; Song, Xue-Yang; Wang, Fa
2016-01-29
The canonical understanding of quantum oscillation in metals is challenged by the observation of the de Haas-van Alphen effect in an insulator, SmB_{6} [Tan et al, Science 349, 287 (2015)]. Based on a two-band model with inverted band structure, we show that the periodically narrowing hybridization gap in magnetic fields can induce the oscillation of low-energy density of states in the bulk, which is observable provided that the activation energy is small and comparable to the Landau level spacing. Its temperature dependence strongly deviates from the Lifshitz-Kosevich theory. The nontrivial band topology manifests itself as a nonzero Berry phase in the oscillation pattern, which crosses over to a trivial Berry phase by increasing the temperature or the magnetic field. Further predictions to experiments are also proposed.
Quantum Capacitance of a Topological Insulator-Ferromagnet Interface.
Siu, Zhuo Bin; Chowdhury, Debashree; Jalil, Mansoor B A; Basu, Banasri
2017-03-24
We study the quantum capacitance in a topological insulator thin film system magnetized in the in-plane direction in the presence of an out-of-plane magnetic field and hexagonal warping. To first order, the modification in quantum capacitance due to hexagonal warping compared to the clean case, where both the in-plane magnetization and hexagonal warping are absent, is always negative, and increases in magnitude monotonically with the energy difference from the charge neutrality point. In contrast, the change in the quantum capacitance due to in-plane magnetization oscillates with the energy in general, except when a certain relation between the inter-surface coupling, out of plane Zeeman energy splitting and magnetic field strength is satisfied. In this special case, the quantum capacitance remains unchanged by the in-plane magnetization for all energies.
Optical response and activity of ultrathin films of topological insulators
Parhizgar, Fariborz; Moghaddam, Ali G.; Asgari, Reza
2015-07-01
We investigate the optical properties of ultrathin film of a topological insulator in the presence of an in-plane magnetic field. We show that due to the combination of the overlap between the surface states of the two layers and the magnetic field, the optical conductivity can show strong anisotropy. This leads to the effective optical activity of the ultrathin film by influencing the circularly polarized incident light. Intriguingly, for a range of magnetic fields, the reflected and transmitted lights exhibit elliptic character. Even for certain values almost linear polarizations are obtained, indicating that the thin film can act as a polaroid in reflection. All these features are discussed in the context of the time-reversal symmetry breaking as one of the key ingredients for the optical activity.
Photonic Floquet Topological Insulator in an Atomic Ensemble
Zhang, Yiqi; Belić, Milivoj R; Zheng, Huaibin; Wang, Zhiguo; Xiao, Min; Zhang, Yanpeng
2014-01-01
We demonstrate the photonic Floquet topological insulator (PFTI) in an atomic vapor with nonlinear susceptibilities. The interference of three coupling fields splits the energy levels periodically to form a periodic refractive index structure with honeycomb symmetry that can be adjusted by the choice of frequency detunings and intensities of the coupling fields, which all affect the appearance of Dirac cones in the momentum space. When the honeycomb lattice sites are helically ordered along the propagation direction, we obtain a PFTI in the atomic vapor in which an obliquely incident beam moves along the zigzag edge without scattering energy into the PFTI, due to the confinement of the edge states. The appearance of Dirac cones and the formation of PFTI is strongly affected by the nonlinear susceptibilities; i.e. the PFTI can be shut off by the third-order nonlinear susceptibility and re-opened up by the fifth-order one.
Geometric Model of Topological Insulators from the Maxwell Algebra
Palumbo, Giandomenico
2016-01-01
We propose a novel geometric model of three-dimensional topological insulators in presence of an external electromagnetic field. The gapped boundary of these systems supports relativistic quantum Hall states and is described by a Chern-Simons theory with a gauge connection that takes values in the Maxwell algebra. This represents a non-central extension of the Poincar\\'e algebra and takes into account both the Lorentz and magnetic-translation symmetries of the surface states. In this way, we derive a relativistic version of the Wen-Zee term, and we show that the non-minimal coupling between the background geometry and the electromagnetic field in the model is in agreement with the main properties of the relativistic quantum Hall states in the flat space.
Gu, Genda; Yang, Alina; Schneeloch, J.; Zhong, R. D.; Xu, Z. J.; Tranquada, J. M.; Pan, Z. H.; Si, W. D.; Shi, X. Y.; Li, Q.; Valla, T.
2013-03-01
The discovery of 3D topological insulator materials and topological superconductor opens up a new research field in the condensed matter physics. We have grown a number of Bi-Sb-Te-Se topological insulator, and Cu-Bi-Se and Sn-In-Te topological superconductor single crystals. We have measured the physical properties on these single crystals. We have studied the effect of growth condition and impurity on the bulk electrical conductivity of these single crystals. We try to answer two questions for the topological insulator materials if it is possible to grow the bulk-insulating topological insulator single crystals and Which maximum resistivity of these topological insulator single crystals we can grow. For the topological superconductor, we have got the bulk superconducting single crystals with a maximum Tc =4.5K. DOE under Contract No. DE-AC02-98CH10886 and the DOE Center for Emergent Superconductivity.
Thermoelectric properties of topological insulator BaSn2
Guo, San-Dong; Qiu, Liang
2017-01-01
Recently, \\text{BaS}{{\\text{n}}2} has been predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulators have a close connection to thermoelectric materials, such as the \\text{B}{{\\text{i}}2}\\text{T}{{\\text{e}}3} family. In this work, we investigate thermoelectric properties of \\text{BaS}{{\\text{n}}2} by the first-principles calculations combined with the Boltzmann transport theory. The electronic part is carried out by a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is performed using a generalized gradient approximation (GGA). It was found that the electronic transport coefficients between the in-plane and cross-plane directions showed strong anisotropy, while lattice-lattice thermal conductivities demonstrated almost complete isotropy. Calculated results revealed a very low lattice thermal conductivity for \\text{BaS}{{\\text{n}}2} , and the corresponding average lattice thermal conductivity at room temperature is 1.69 \\text{W}~{{\\text{m}}-1}~{{\\text{K}}-1} , which is comparable or lower than those of lead chalcogenides and bismuth-tellurium systems as classic thermoelectric materials. Due to the complicated scattering mechanism, calculating the scattering time τ is challenging. By using an empirical τ ={{10}-14} s, the n-type figure of merit ZT is greater than 0.40 in wide temperature ranges. Experimentally, it is possible to attain better thermoelectric performance by strain or tuning size parameters. This work indicates that \\text{BaS}{{\\text{n}}2} may be a potential thermoelectric material, which can stimulate further theoretical and experimental work.
Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
Directory of Open Access Journals (Sweden)
Theresa P. Ginley
2016-11-01
Full Text Available In this article, we will review recent progress in the growth of topological insulator (TI thin films by molecular beam epitaxy (MBE. The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.
Interaction-induced topological insulator states in strained graphene.
Abanin, D A; Pesin, D A
2012-08-10
The electronic properties of graphene can be manipulated via mechanical deformations, which opens prospects for both studying the Dirac fermions in new regimes and for new device applications. Certain natural configurations of strain generate large nearly uniform pseudomagnetic fields, which have opposite signs in the two valleys, and give rise to flat spin- and valley-degenerate pseudo-Landau levels (PLLs). Here we consider the effect of the Coulomb interactions in strained graphene with a uniform pseudomagnetic field. We show that the spin or valley degeneracies of the PLLs get lifted by the interactions, giving rise to topological insulator states. In particular, when a nonzero PLL is quarter or three-quarter filled, an anomalous quantum Hall state spontaneously breaking time-reversal symmetry emerges. At half-filled PLLs, a weak spin-orbital interaction stabilizes the time-reversal-symmetric quantum spin-Hall state. These many-body states are characterized by the quantized conductance and persist to a high temperature scale set by the Coulomb interactions, which we estimate to be a few hundreds Kelvin at moderate strain values. At fractional fillings, fractional quantum Hall states breaking valley symmetry emerge. These results suggest a new route to realizing robust topological states in mesoscopic graphene.
Accessing Rashba states in electrostatically gated topological insulator devices
Banerjee, Abhishek; Sundaresh, Ananthesh; Majhi, Kunjalata; Ganesan, R.; Anil Kumar, P. S.
2016-12-01
We study the low temperature electrical transport in gated BiSbTe1.25Se1.75/hexagonal-Boron Nitride van der Waals heterostructure devices. Our experiments indicate the presence of Rashba spin-split states confined to the sample surface. While such states have been observed previously in photo-emission spectroscopy and STM experiments, it has not been possible to unambiguously detect them by electrical means and their transport properties remain mostly unknown. We show that these states support high mobility conduction with Hall effect mobilities ˜2000 to 3000 cm2/V-s that are paradoxically much larger than the mobilities of the topological surface states ˜300 cm2/V-s at T = 2 K. The spin-split nature of these states is confirmed by magneto-resistance measurements that reveal multi-channel weak anti-localization. Our work shows that Rashba spin split states can be electrically accessed in Topological insulators paving the way for future spintronic applications.
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
Institute of Scientific and Technical Information of China (English)
YU Rui
2011-01-01
@@ The Hall effect, the anomalous Hall effect (AHE) and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively.The AHE, in which a voltage transverse to the electric current appears even in the absence of an external magnetic field, was first detected in ferromagnetic (FM) metals in 1881 and later found to arise from the spin-orbit coupling (SOC) between the current and magnetic moments.Recent progress on the mechanism of AHE has established a link between the AHE and the topological nature of the Hall current by adopting the Berry-phase concepts in close analogy to the intrinsic spin Hall effect.Given the experimental discovery of the quantum Hall and the quantum spin Hall effects, it is natural to ask whether the AHE can also be quantized.In a quantized anomalous Hall (QAH) insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field.
Ultraviolet and visible range plasmonics of a topological insulator
Ou, Jun-Yu; Adamo, Giorgio; Sulaev, Azat; Wang, Lan; Zheludev, Nikolay I
2014-01-01
The development of metamaterials, data processing circuits and sensors for the visible and UV parts of the spectrum is hampered by the lack of low-loss media supporting plasmonic excitations and drives the intense search for plasmonic materials beyond noble metals. By studying plasmonic nanostructures fabricated on the surface of topological insulator $\\mbox{Bi}_{1.5}\\mbox{Sb}_{0.5}\\mbox{Te}_{1.8}\\mbox{Se}_{1.2}$ we found that it is orders of magnitude better plasmonic material than gold and silver in the blue-UV range. Metamaterial fabricated from $\\mbox{Bi}_{1.5}\\mbox{Sb}_{0.5}\\mbox{Te}_{1.8}\\mbox{Se}_{1.2}$ show plasmonic resonances from 350 nm to 550 nm while surface gratings exhibit cathodoluminescent peaks from 230 nm to 1050 nm. The negative permittivity underpinning plasmonic response is attributed to the combination of bulk interband transitions and surface contribution of the topologically protected states. The importance of our result is in the identification of new mechanisms of negative permittiv...
Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.
Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao
2012-06-29
Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.
2016-04-01
of a thin layer of topological insulator Bi2Se3 with the transmission of T = 50%. We apply magnetic field B=3 tesla normal to the sample and parallel...nonlinear induced by magnetic field in the Topological Insulator Bi2Se3 and Molybdenum Disulfide MoS2. The nonlinear effect is pulse broadening...Topological Insulator Q- Switched Erbium-Doped Fiber Laser”, IEEE J. Sel. Top. Quant. Electron., 20, 0900508 (2014). [2]. Shuqing Chen et al, “Stable Q
Surface plasmon polaritons in topological insulator nano-films and superlattices.
Deshko, Yury; Krusin-Elbaum, Lia; Menon, Vinod; Khanikaev, Alexander; Trevino, Jacob
2016-04-04
We investigate the propagation of surface plasmon polaritons (SPPs) in thin films of topological insulators. Cases of single films and multilayered stacks are analyzed. The materials considered are second generation three dimensional topological insulators Bi2Se3, Bi2Te3, and Sb2Te3. Dispersion relations and propagation lengths of SPPs are estimated numerically, taking into account the variation of bulk dielectric functions of topological insulators, as well as substrate, using the Drude-Lorentz model. The key factors affecting propagation length are identified and experimental modifications for tuning the dispersion relations are proposed. The apparent discrepancy between the experimental data and previously considered theory is resolved.
Qin, Wei; Zhang, Zhenyu
2014-12-31
At the interface of an s-wave superconductor and a three-dimensional topological insulator, Majorana zero modes and Majorana helical states have been proposed to exist respectively around magnetic vortices and geometrical edges. Here we first show that randomly distributed magnetic impurities at such an interface will induce bound states that broaden into impurity bands inside (but near the edges of) the superconducting gap, which remains open unless the impurity concentration is too high. Next we find that an increase in the superconducting gap suppresses both the oscillation magnitude and the period of the Ruderman-Kittel-Kasuya-Yosida interaction between two magnetic impurities. Within a mean-field approximation, the ferromagnetic Curie temperature is found to be essentially independent of the superconducting gap, an intriguing phenomenon due to a compensation effect between the short-range ferromagnetic and long-range antiferromagnetic interactions. The existence of robust superconductivity and persistent ferromagnetism at the interface allows realization of a novel topological phase transition from a nonchiral to a chiral superconducting state at sufficiently low temperatures, providing a new platform for topological quantum computation.
Magnetic transitions in the topological magnon insulator Cu(1,3-bdc)
Chisnell, R.; Helton, J. S.; Freedman, D. E.; Singh, D. K.; Demmel, F.; Stock, C.; Nocera, D. G.; Lee, Y. S.
2016-06-01
Topological magnon insulators are a new class of magnetic materials that possess topologically nontrivial magnon bands. As a result, magnons in these materials display properties analogous to those of electrons in topological insulators. Here we present magnetization, specific heat, and neutron scattering measurements of the ferromagnetic kagome magnet Cu(1,3-bdc). Our measurements provide a detailed description of the magnetic structure and interactions in this material and confirm that it is an ideal prototype for topological magnon physics in a system with a simple spin Hamiltonian.
Topological Insulators on the Ruby Lattice with Rashba Spin-Orbit Coupling
Institute of Scientific and Technical Information of China (English)
HOU Jing-Min; WANG Guo-Xiang
2013-01-01
We investigate a tight-binding model of the ruby lattice with Rashba spin-orbit coupling.We calculate the band structure of the lattice and evaluate the Z2 topological indices.According to the Z2 topological indices and the band structure,we present the phase diagrams of the lattice with different filling fractions.We find.that topological insulators occur in some range of parameters at 1/6,1/3,1/2,2/3 and 5/6 filling fractions.We analyze and discuss the characteristics of these topological insulators and their edge states.
Energy Technology Data Exchange (ETDEWEB)
Posske, Thore Hagen
2016-02-26
Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion. They are regarded to be of considerable future use in spintronics and for quantum computation. Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics. In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal. Let us summarize our primary results. Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region. We thereby rely on and extend the method of refermionizable points. Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder. We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.
Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.
Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y
2015-04-14
The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.
Spatial distribution of spin polarization in a channel on the surface of a topological insulator.
Zhou, Xiaoying; Shao, Huaihua; Liu, Yiman; Tang, Dongsheng; Zhou, Guanghui
2012-05-09
We study the spatial distribution of electron spin polarization for a gate-controlled T-shaped channel on the surface of a three-dimensional topological insulator (3D TI). We demonstrate that an energy gap depending on channel geometry parameters is definitely opened due to the spatial confinement. Spin surface locking in momentum space for a uniform wide channel with Hamiltonian linearity in the wavevector is still kept, but it is broken with Hamiltonian nonlinearity in the wavevector, like that for two-dimensional surface states widely studied in the literature. However, the spin surface locking for a T-shaped channel is broken even with Hamiltonian linearity in the wavevector. Interestingly, the magnitude and direction of the in-plane spin polarization are spatially dependent in all regions due to the breaking of translational symmetry of the T-shaped channel system. These interesting findings for an electrically controlled nanostructure based on the 3D TI surface may be testable with the present experimental technique, and may provide further understanding the nature of 3D TI surface states.
Ye, Peng; Hughes, Taylor L.; Maciejko, Joseph; Fradkin, Eduardo
2016-09-01
Topological phases of matter are usually realized in deconfined phases of gauge theories. In this context, confined phases with strongly fluctuating gauge fields seem to be irrelevant to the physics of topological phases. For example, the low-energy theory of the two-dimensional (2D) toric code model (i.e., the deconfined phase of Z2 gauge theory) is a U(1 )×U(1 ) Chern-Simons theory in which gauge charges (i.e., e and m particles) are deconfined and the gauge fields are gapped, while the confined phase is topologically trivial. In this paper, we point out a route to constructing exotic three-dimensional (3D) gapped fermionic phases in a confining phase of a gauge theory. Starting from a parton construction with strongly fluctuating compact U(1 )×U(1 ) gauge fields, we construct gapped phases of interacting fermions by condensing two linearly independent bosonic composite particles consisting of partons and U(1 )×U(1 ) magnetic monopoles. This can be regarded as a 3D generalization of the 2D Bais-Slingerland condensation mechanism. Charge fractionalization results from a Debye-Hückel-type screening cloud formed by the condensed composite particles. Within our general framework, we explore two aspects of symmetry-enriched 3D Abelian topological phases. First, we construct a new fermionic state of matter with time-reversal symmetry and Θ ≠π , the fractional topological insulator. Second, we generalize the notion of anyonic symmetry of 2D Abelian topological phases to the charge-loop excitation symmetry (Charles ) of 3D Abelian topological phases. We show that line twist defects, which realize Charles transformations, exhibit non-Abelian fusion properties.
Self-organized pseudo-graphene on grain boundaries in topological band insulators
Slager, Robert-Jan; Juričić, Vladimir; Lahtinen, Ville; Zaanen, Jan
2016-06-01
Semimetals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semimetals, such as graphene in two spatial dimensions, requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semimetals in three spatial dimensions are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semimetals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In addition to experimentally accessible electronic transport measurements, these states exhibit a valley anomaly in two dimensions influencing edge spin transport, whereas in three dimensions they appear as graphenelike states that may exhibit an odd-integer quantum Hall effect. The general mechanism underlying these semimetals—the hybridization of spinon modes bound to the grain boundary—suggests that topological semimetals can emerge in any topological material where lattice dislocations bind localized topological modes.
Gu, Genda; Yang, Alina; Schneeloch, John; Xu, Zhijun; Tranquada, John; Zhoa, J. G.; Pan, Z. H.; Yang, H. B.; Si, W. D.; Valla, T.
2012-02-01
The discovery of 3D topological insulator and topological superconductor materials opens up a new research field in the condensed matter physics. In order to exploit the novel surface properties of these topological insulators, it is crucial to achieve a bulk-insulating state in these topological insulator crystals. Unfortunately, all available topological insulator crystals are not bulk-insulating. We have grown a number of Bi-Se, Bi-Te, Sb-Te-Se, Bi-Sb-Se, Bi-Sb-Te-Se and Bi-Sb-Te-Se-S topological insulator single crystals by using 5N and 6N pure elements. We have measured the physical properties on these single crystals. We have studied the effect of growth condition and impurity on the bulk electrical conductivity of these single crystals. We try to answer two questions if it is possible to grow the bulk-insulating topological insulator single crystals and which maximum resistivity of these topological insulator single crystals we can grow. We have also grown a number of CuxBi2Se3 topological superconductor single crystals.
Zhang, Qianfan
2012-03-27
Topological insulator is a new state of matter attracting tremendous interest due to its gapless linear dispersion and spin momentum locking topological states located near the surface. Heterostructures, which have traditionally been powerful in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered that an exotic topological state exists. Surprisingly, the state migrates from the nontrivial Bi 2Se 3 into the trivial Sb 2Se 3 region and spreads across the entire Sb 2Se 3 slab, extending beyond the concept of "surface" state while preserving all of the topological surface state characteristics. This unusual topological state arises from the coupling between different materials and the modification of electronic structure near Fermi energy. Our study demonstrates that heterostructures can open up opportunities for controlling the real-space distribution of the topological state and inducing quantum phase transitions between topologically trivial and nontrivial states. © 2012 American Chemical Society.
Electronic properties of SnTe-class topological crystalline insulator materials
Wang, Jianfeng; Wang, Na; Huang, Huaqing; Duan, Wenhui
2016-11-01
The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations, and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices. Project supported by the Ministry of Science and Technology of China (Grant No. 2016YFA0301000) and the National Natural Science Foundation of China (Grant No. 11334006).
Enhanced electron dephasing in three-dimensional topological insulators
Liao, Jian; Ou, Yunbo; Liu, Haiwen; He, Ke; Ma, Xucun; Xue, Qi-Kun; Li, Yongqing
2017-07-01
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)2Te3 thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. Although the former is consistent with the Nyquist electron-electron interactions commonly seen in ordinary 2D systems, the latter leads to enhanced electron dephasing at low temperatures and is attributed to the coupling between the surface states and the localized charge puddles in the bulk of 3D TIs.
Strain induced novel quantum magnetotransport properties of topological insulators
Ma, Ning; Zhang, Shengli; Liu, Daqing
2016-12-01
Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov-de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment.
The Property, Preparation and Application of Topological Insulators: A Review
Directory of Open Access Journals (Sweden)
Wenchao Tian
2017-07-01
Full Text Available Topological insulator (TI, a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1 Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2 The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3 Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE. Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET, laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.
Transport in selectively magnetically doped topological insulator wires
Acero, Sergio; Brey, Luis; Herrera, William J.; Yeyati, Alfredo Levy
2015-12-01
We study the electronic and transport properties of a topological insulator nanowire including selective magnetic doping of its surfaces. We use a model which is appropriate to describe materials like Bi2Se3 within a k .p approximation and consider nanowires with a rectangular geometry. Within this model the magnetic doping at the (111) surfaces induces a Zeeman field which opens a gap at the Dirac cones corresponding to the surface states. For obtaining the transport properties in a two terminal configuration we use a recursive Green's function method based on a tight-binding model which is obtained by discretizing the original continuous model. For the case of uniform magnetization of two opposite nanowire (111) surfaces we show that the conductance can switch from a quantized value of e2/h (when the magnetizations are equal) to a very small value (when they are opposite). We also analyze the case of nonuniform magnetizations in which the Zeeman field on the two opposite surfaces change sign at the middle of the wire. For this case we find that conduction by resonant tunneling through a chiral state bound at the middle of the wire is possible. The resonant level position can be tuned by imposing an Aharonov-Bohm flux through the nanowire cross section.
Spin accumulation in disordered topological insulator ultrathin films
Siu, Zhuo Bin; Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.
2017-08-01
Topological insulator (TI) ultrathin films differ from the more commonly studied semi-infinite bulk TIs in that the former possess both top and bottom surfaces where the surface states localized at different surfaces can couple to one another across the finite thickness of the film. In the presence of an in-plane magnetization, the TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a Bi2Se3 TI thin film system with an in-plane magnetization and numerically calculate the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo formula calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization and in the out of plane direction are antisymmetric in Fermi energy around the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation.
Tight-binding theory of NMR shifts in topological insulators
Garate, Ion; Boutin, Samuel; Ramirez Ruiz, Jorge
To date, most experiments in topological insulators have focused on probing the surface states of these materials and suppressing the often inevitable contribution from bulk states. However, the latter are of interest on their own and contain useful information that can be extracted with a local probe like nuclear magnetic resonance (NMR). Recently, 77Se NMR experiments on Bi2Se3 single crystals have reported unusual field-independent linewidths and short spin-echo decays. It is likely that an unexpectedly strong indirect internuclear coupling, characteristic of some inverted band structures, is the cause of these peculiar results. Motivated by this hypothesis, we report on a microscopic theory of NMR shifts and linewidths in Bi2Se3 and Bi2Te3. Our theory provides quantitative estimates for the Knight shift, the orbital shift, the Ruderman-Kittel-Kasuya-Yoshida coupling and the Bloembergen-Rowland coupling. We will compare our findings with the available experimental data Funded by the National Science and Engineering Research Council of Canada, Fonds de Recherche Québécois Nature et Technologies, and Mitacs-Globalink.
Effective Hamiltonian for surface states of topological insulator nanotubes
Siu, Zhuo Bin; Tan, Seng Ghee; Jalil, Mansoor B. A.
2017-04-01
In this work we derive an effective Hamiltonian for the surface states of a hollow topological insulator (TI) nanotube with finite width walls. Unlike a solid TI cylinder, a TI nanotube possesses both an inner as well as outer surface on which the states localized at each surface are coupled together. The curvature along the circumference of the nanotube leads to a spatial variation of the spin orbit interaction field experienced by the charge carriers as well as an asymmetry between the inner and outer surfaces of the nanotube. Both of these features result in terms in the effective Hamiltonian for a TI nanotube absent in that of a flat TI thin film of the same thickness. We calculate the numerical values of the parameters for a Bi2Se3 nanotube as a function of the inner and outer radius, and show that the differing relative magnitudes between the parameters result in qualitatively differing behaviour for the eigenstates of tubes of different dimensions.
Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji
2015-01-01
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a...
Acquisition of He3 Cryostat Insert for Experiments on Topological Insulators
2016-02-03
facilitated transport experiments on topological insulators and Dirac and Weyl semimetals. These experiments resulted in several notable achievements and...Approved for Public Release; Distribution Unlimited Final Report: Acquisition of He3 Cryostat Insert for Experiments on Topological Insulators. The views...P.O. Box 12211 Research Triangle Park , NC 27709-2211 Cryogenic equipment with 9 Tesla magnet, low temperature experiments REPORT DOCUMENTATION PAGE
Chemically gated electronic structure of a superconducting doped topological insulator system
Wray, L. A.; Xu, S.; Neupane, M.; Fedorov, A. V.; Hor, Y. S.; Cava, R. J.; Hasan, M. Z.
2013-07-01
Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.
Topological invariants of band insulators derived from the local-orbital based embedding potential
Ishida, H.; Liebsch, A.; Wortmann, D.
2017-09-01
We demonstrate that topological invariants of band insulators can be derived efficiently from the eigenvalues of the local-orbital (LO) based embedding potential, called also the contact (lead) self-energy. The LO based embedding potential is a bulk quantity. Given the tight-binding Hamiltonian describing the bulk valence and conduction bands, it is constructed straightforwardly from the bulk wave functions satisfying the generalized Bloch condition. When the one-electron energy ɛ is located within a projected bulk band gap at a given planar wave vector k , the embedding potential becomes Hermitian. Its real eigenvalues exhibit distinctly different behavior depending on the topological properties of the valence bands, thus enabling unambiguous identification of bulk topological invariants. We consider the Bernevig-Hughes-Zhang model as an example of a time-reversal invariant topological insulator and tin telluride (SnTe) crystallized in a rock-salt structure as an example of a topological crystalline insulator.
Edam, Rob; Mes, Edwin P C; Meunier, David M; Van Damme, Freddy A; Schoenmakers, Peter J
2014-10-31
Polymer separations under non-conventional conditions have been explored to obtain a separation of long-chain branched polymers from linear polymers with identical hydrodynamic size. In separation media with flow-through channels of the same order as the size of the analyte molecules in solution, the separation and the elution order of polymers are strongly affected by the flow rate. At low flow rates, the largest polymers are eluted last. At high flow rates, they are eluted first. By tuning the channel size and flow rate, conditions can be found where separation becomes independent of molar mass or size of linear polymers. Long-chain branched polymers did experience lower migration rates under these conditions and can be separated from linear polymers. This type of separation is referred to as molecular-topology fractionation (MTF) at critical conditions. Separation by comprehensive two-dimensional molecular-topology fractionation and size-exclusion chromatography (MTF×SEC) was used to study the retention characteristics of MTF. Branching selectivity was demonstrated for three- and four-arm "star" polystyrenes of 3-5×10(6)g/mol molar mass. Baseline separation could be obtained between linear polymer, Y-shaped molecules, and X-shaped molecules in a single experiment at constant flow rate. For randomly branched polymers, the branching selectivity inevitably results in an envelope of peaks, because it is not possible to fully resolve the huge numbers of different branched and linear polymers of varying molar mass. It was concluded that MTF involves partial deformation of polymer coils in solution. The increased coil density and resistance to deformation can explain the different retention behavior of branched molecules.
Liu, Wenqing; He, Liang; Zhou, Yan; Murata, Koichi; Onbasli, Mehmet C.; Ross, Caroline A.; Jiang, Ying; Wang, Yong; Xu, Yongbing; Zhang, Rong; Wang, Kang. L.
2016-05-01
One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (Tc). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi2Se3 by means of proximity to the high-Tc ferrimagnetic insulator (FMI) Y3Fe5O12 and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi2-xCrxSe3/Y3Fe5O12 interface. We found that the Bi2-xCrxSe3 grown on Y3Fe5O12(111) predominately contains Cr3+ cations, and the spin direction of the Cr3+ is aligned parallel to that of tetrahedral Fe3+ of the YIG, revealing a ferromagnetic exchange coupling between the Bi2-xCrxSe3 and the Y3Fe5O12.
Battiato, Marco; Aguilera, Irene; Sánchez-Barriga, Jaime
2017-07-17
Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin-orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized G W +Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron-electron and electron-phonon scatterings. Taking the prototypical insulator Bi 2 Te 3 as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron-electron and electron-phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials.
Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well
Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.
2016-09-01
Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.
Energy Technology Data Exchange (ETDEWEB)
Takagaki, Y. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
2015-08-07
The helical edge states of two-dimensional topological insulators (TIs) experience appreciable quantum mechanical scattering in narrow channels when the width changes abruptly. The interference of the geometry scattering in narrow-wide-narrow waveguide structures is shown to give rise to the strong suppression of transmission when the incident energy is barely above the propagation threshold. Periodic resonant transmission takes place in this high reflection regime while the length of the wide section is varied. The resonance condition is governed by the transverse confinement in the wide section, where the form of quantization is manifested to differ for the two orthogonal directions. The confined energy levels in TI quantum dots are derived based on this observation. In addition, the off-diagonal spin-orbit term is found to produce an anomalous resonance state, which merges with the bottom ordinary resonance state to annihilate.
Systematic control of surface Dirac fermion density on topological insulator Bi2Te3
Xu, Suyang; Xia, Yuqi; Grauer, David; Hor, Yewsan; Cava, Robert; Hasan, Zahid
2010-03-01
Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. They feature surface states that are topologically protected against scattering by time reversal symmetry. The proposed applications of topological insulators in device geometries rely on the ability to tune the chemical potential on their surfaces in the vicinity of the Dirac node. Here, we demonstrate a suite of surface control methods based on a combination of photo-doping and molecular-doping to tune the Dirac fermion density on the topological (111) surface of Bi2Te3. Their efficacy is demonstrated via direct electronic structure measurements using high resolution angle-resolved photoemission spectroscopy. These results open up new opportunities for probing topological behavior of Dirac electrons in Bi2Te3. At least one of the methods demonstrated here can be successfully applied to other topological insulators (Bi1-xSbx, Sb2Te3 and Bi2Se3). More importantly, our methods of topological surface state manipulation demonstrated here are highly suitable for future spectroscopic studies of topological phenomena which will complement the transport results gained from the traditional electrical gating techniques.
Takane, Yositake
2016-09-01
Two-dimensional (2D) massless Dirac electrons appear on a surface of three-dimensional topological insulators. The conductivity of such a 2D Dirac electron system is studied for strong topological insulators in the case of the Fermi level being located at the Dirac point. The average conductivity is numerically calculated for a system of length L and width W under the periodic or antiperiodic boundary condition in the transverse direction, and its behavior is analyzed by applying a finite-size scaling approach. It is shown that is minimized at the clean limit, where it becomes scale-invariant and depends only on L/W and the boundary condition. It is also shown that once disorder is introduced, monotonically increases with increasing L. Hence, the system becomes a perfect metal in the limit of L → ∞ except at the clean limit, which should be identified as an unstable fixed point. Although the scaling curve of strongly depends on L/W and the boundary condition near the unstable fixed point, it becomes almost independent of them with increasing , implying that it asymptotically obeys a universal law.
Wang, Wen Jie; Gao, Kuang Hong; Li, Zhi Qing
2016-05-04
We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) effect is observed at low temperatures. The observed WAL effect is two dimensional in nature. Applying the Hikami-Larkin-Nagaoka theory, we have obtained the dephasing length. It is found that the temperature dependence of the dephasing length cannot be described only by the Nyquist electron-electron dephasing, in conflict with prevailing experimental results. From the WAL effect, we extract the number of the transport channels, which is found to increase with increasing the thickness of the films, reflecting the thickness-dependent coupling between the top and bottom surface states in topological insulator. On the other hand, the electron-electron interaction (EEI) effect is observed in temperature-dependent conductivity. From the EEI effect, we also extract the number of the transport channel, which shows similar thickness dependence with that obtained from the analysis of the WAL effect. The EEI effect, therefore, can be used to analyze the coupling effect between the top and bottom surface states in topological insulator like the WAL effect.
Derakhshan, V.; Ketabi, S. A.; Moghaddam, A. G.
2016-09-01
We employed the formalism of bond currents, expressed in terms of non-equilibrium Green’s function to obtain the local currents and transport features of zigzag silicene ribbon in the presence of magnetic impurity. When only intrinsic and Rashba spin-orbit interactions are present, silicene behaves as a two-dimensional topological insulator with gapless edge states. But in the presence of finite intrinsic spin-orbit interaction, the edge states start to penetrate into the bulk of the sample by increasing Rashba interaction strength. The exchange interaction induced by local impurities breaks the time-reversal symmetry of the gapless edge states and influences the topological properties strongly. Subsequently, the singularity of partial Berry curvature disappears and the silicene nanoribbon becomes a trivial insulator. On the other hand, when the concentration of the magnetic impurities is low, the edge currents are not affected significantly. In this case, when the exchange field lies in the x-y plane, the spin mixing around magnetic impurity is more profound rather than the case in which the exchange field is directed along the z-axis. Nevertheless, when the exchange field of magnetic impurities is placed in the x-y plane, a spin-polarized conductance is observed. The resulting conductance polarization can be tuned by the concentration of the impurities and even completely polarized spin transport is achievable.
Wang, Wen Jie; Gao, Kuang Hong; Li, Zhi Qing
2016-05-01
We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) effect is observed at low temperatures. The observed WAL effect is two dimensional in nature. Applying the Hikami-Larkin-Nagaoka theory, we have obtained the dephasing length. It is found that the temperature dependence of the dephasing length cannot be described only by the Nyquist electron-electron dephasing, in conflict with prevailing experimental results. From the WAL effect, we extract the number of the transport channels, which is found to increase with increasing the thickness of the films, reflecting the thickness-dependent coupling between the top and bottom surface states in topological insulator. On the other hand, the electron-electron interaction (EEI) effect is observed in temperature-dependent conductivity. From the EEI effect, we also extract the number of the transport channel, which shows similar thickness dependence with that obtained from the analysis of the WAL effect. The EEI effect, therefore, can be used to analyze the coupling effect between the top and bottom surface states in topological insulator like the WAL effect.
Grusdt, Fabian; Abanin, Dmitry; Demler, Eugene
2013-05-01
Recently experiments with ultracold atoms started to explore topological phases in 1D optical lattices. While transport measurements are challenging in these systems, ways to directly measure topological quantum numbers using a combination of Bloch oscillations and Ramsey interferometry have been explored (Atala et al., arXiv:1212.0572). In this talk I will present ways to measure the Z2 topological quantum numbers of two and three dimensional time-reversal invariant (TR) topological insulators. In this case non-Abelian Bloch oscillations can be combined with Ramsey interferometry to map out the topological properties of a given band-structure. Our method is very general and works even in the presence of accidental degeneracies. The applicability of the scheme is discussed for different theoretically proposed implementations of TR topological insulators using ultracold atoms. F. G. is grateful to Harvard University for hospitality and acknowledges financial support from Graduate School Materials Science in Mainz (MAINZ).
Lapa, Matthew F.; Jian, Chao-Ming; Ye, Peng; Hughes, Taylor L.
2017-01-01
We calculate the topological part of the electromagnetic response of bosonic integer quantum Hall (BIQH) phases in odd (space-time) dimensions, and bosonic topological insulator (BTI) and bosonic chiral semimetal (BCSM) phases in even dimensions. To do this, we use the nonlinear sigma model (NLSM) description of bosonic symmetry-protected topological (SPT) phases, and the method of gauged Wess-Zumino (WZ) actions. We find the surprising result that for BIQH states in dimension 2 m -1 (m =1 ,2 ,⋯ ), the bulk response to an electromagnetic field Aμ is characterized by a Chern-Simons term for Aμ with a level quantized in integer multiples of m ! (factorial). We also show that BTI states (which have an extra Z2 symmetry) can exhibit a Z2-breaking quantum Hall effect on their boundaries, with this boundary quantum Hall effect described by a Chern-Simons term at level m/! 2 . We show that the factor of m ! can be understood by requiring gauge invariance of the exponential of the Chern-Simons term on a general Euclidean manifold, and we also use this argument to characterize the electromagnetic and gravitational responses of fermionic SPT phases with U(1 ) symmetry in all odd dimensions. We then use our gauged boundary actions for the BIQH and BTI states to (i) construct a bosonic analog of a chiral semimetal (BCSM) in even dimensions, (ii) show that the boundary of the BTI state exhibits a bosonic analog of the parity anomaly of Dirac fermions in odd dimensions, and (iii) study anomaly inflow at domain walls on the boundary of BTI states. In a series of Appendixes we derive important formulas and additional results. In particular, in Appendix A we use the connection between equivariant cohomology and gauged WZ actions to give a mathematical interpretation of the actions for the BIQH and BTI boundaries constructed in this paper.
Kumar, Raj
confirmed by the cos(theta) dependence of field titled MR measurements on the Bi2Se3 thin films. No switching in the AMR or hysteresis behavior in the MR was observed in control experiments performed on non TI materials with superconducting electrodes and metal electrodes on Bi2Se3 TI films. The growth and characterization of Bi2Se3/Bi 2Se3/La0.70Sr0.30MnO3 (TI/FM), a topological insulator/ferromagnet heterostructure is discussed in the last part of the thesis. We have grown Bi2Se3/Bi2Se 3/La0.70Sr0.30MnO3 (TI/FM) heterostructures by the method of pulsed laser deposition. Bi2Se3/La 0.70Sr0.30MnO3 (LSMO) is a strong ferromagnetic material with Tc ˜ 350 K and Bi2Se3 is the most studied topological insulator. XRD and phi scan measurements of Bi2Se3/La 0.70Sr0.30MnO3 (TI/FM) heterostructure showed that epitaxial thin films of Bi2Se3 were grown on the LSMO template. Strong in-plane magnetization was confirmed by magnetometry measurements of the Bi2Se3/LSMO heterostructure. Magnetotransport measurements showed a distorted weak anti-localization effect with hysteretic behavior due to interface induced ferromagnetism in the Bi2Se 3 TI films.
Xypakis, Emmanouil; Bardarson, Jens H.
2017-01-01
Clean topological insulators exposed to a magnetic field develop Landau levels accompanied by a nonzero Hall conductivity for the infinite slab geometry. In this work we consider the case of disordered topological insulator nanowires and find, in contrast, that a zero Hall plateau emerges within a broad energy window close to the Dirac point. We numerically calculate the conductance and its distribution for a statistical ensemble of disordered nanowires, and use the conductance fluctuations to study the dependence of the insulating phase on system parameters, such as the nanowire length, disorder strength, and the magnetic field.
Strain induced novel quantum magnetotransport properties of topological insulators
Energy Technology Data Exchange (ETDEWEB)
Ma, Ning, E-mail: maning@stu.xjtu.edu.cn [Department of Physics, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Shengli, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi’an Jiaotong University, Xi’an 710049 (China); Liu, Daqing, E-mail: liudq@cczu.edu.cn [School of Mathematics and Physics, Changzhou University, Changzhou 213164 (China)
2016-12-15
Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov–de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment. - Highlights: • The strain removes the degeneracy in inversion symmetric Dirac cones. • The strain gives rise to the splitting and mixture of the Landau levels. • The strain leads to the asymmetric spectrum of the dc conductivity. • Shubnikov de Haas oscillations are shown to be superimposed on Weiss oscillations. • Interplay between strain and electric field causes different occupancy of TI states.
Gu, Yingfei; Lee, Ching Hua; Wen, Xueda; Cho, Gil Young; Ryu, Shinsei; Qi, Xiao-Liang
2016-09-01
In this paper, we study (2 +1 ) -dimensional quantum anomalous Hall states, i.e., band insulators with quantized Hall conductance, using exact holographic mapping. Exact holographic mapping is an approach to holographic duality which maps the quantum anomalous Hall state to a different state living in (3 +1 ) -dimensional hyperbolic space. By studying topological response properties and the entanglement spectrum, we demonstrate that the holographic dual theory of a quantum anomalous Hall state is a (3 +1 ) -dimensional topological insulator. The dual description enables a characterization of topological properties of a system by the quantum entanglement between degrees of freedom at different length scales.
Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers
Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E.; Hankiewicz, Ewelina M.; Žutić, Igor
2016-10-01
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.
Allerdt, Andrew; Feiguin, A. E.; Martins, G. B.
2017-07-01
We calculate exact zero-temperature real-space properties of a substitutional magnetic impurity coupled to the edge of a zigzag silicenelike nanoribbon. Using a Lanczos transformation [A. Allerdt et al., Phys. Rev. B 91, 085101 (2015), 10.1103/PhysRevB.91.085101] and the density-matrix renormalization-group method, we obtain a realistic description of stanene and germanene that includes the bulk and the edges as boundary one-dimensional helical metallic states. Our results for substitutional impurities indicate that the development of a Kondo state and the structure of the spin correlations between the impurity and the electron spins in the metallic edge state depend considerably on the location of the impurity. More specifically, our real-space resolution allows us to conclude that there is a sharp distinction between the impurity being located at a crest or a trough site at the zigzag edge. We also observe, as expected, that the spin correlations are anisotropic due to an emerging Dzyaloshinskii-Moriya interaction with the conduction electrons and that the edges scatter from the impurity and "snake" or circle around it. Our estimates for the Kondo temperature indicate that there is a very weak enhancement due to the presence of spin-orbit coupling.
Quantum transport and two-parameter scaling at the surface of a weak topological insulator.
Mong, Roger S K; Bardarson, Jens H; Moore, Joel E
2012-02-17
Weak topological insulators have an even number of Dirac cones in their surface spectrum and are thought to be unstable to disorder, which leads to an insulating surface. Here we argue that the presence of disorder alone will not localize the surface states; rather, the presence of a time-reversal symmetric mass term is required for localization. Through numerical simulations, we show that in the absence of the mass term the surface always flow to a stable metallic phase and the conductivity obeys a one-parameter scaling relation, just as in the case of a strong topological insulator surface. With the inclusion of the mass, the transport properties of the surface of a weak topological insulator follow a two-parameter scaling form.
Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity.
Kastl, Christoph; Karnetzky, Christoph; Karl, Helmut; Holleitner, Alexander W
2015-03-26
In recent years, a class of solid-state materials, called three-dimensional topological insulators, has emerged. In the bulk, a topological insulator behaves like an ordinary insulator with a band gap. At the surface, conducting gapless states exist showing remarkable properties such as helical Dirac dispersion and suppression of backscattering of spin-polarized charge carriers. The characterization and control of the surface states via transport experiments is often hindered by residual bulk contributions. Here we show that surface currents in Bi2Se3 can be controlled by circularly polarized light on a picosecond timescale with a fidelity near unity even at room temperature. We reveal the temporal separation of such ultrafast helicity-dependent surface currents from photo-induced thermoelectric and drift currents in the bulk. Our results uncover the functionality of ultrafast optoelectronic devices based on surface currents in topological insulators.
Lee, Yea-Lee; Park, Hee Chul; Ihm, Jisoon; Son, Young-Woo
2015-09-15
Because topological surface states of a single-crystal topological insulator can exist on all surfaces with different crystal orientations enclosing the crystal, mutual interactions among those states contiguous to each other through edges can lead to unique phenomena inconceivable in normal insulators. Here we show, based on a first-principles approach, that the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges of a prototypical topological insulator such as Bi2Se3. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering is in fact a manifestation of the axion electrodynamics in real solids.
Role of oxidation on surface conductance of the topological insulator Bi2Te2Se
Hwang, Jin Heui; Park, Joonbum; Kwon, Sangku; Kim, Jun Sung; Park, Jeong Young
2014-12-01
We investigated the effect of surface oxides on charge transport properties in a topological insulator (Bi2Te2Se) using conductive probe atomic force microscopy in an ultrahigh vacuum environment. Uniform distribution of the measured friction and current were observed over a single quintuple layer terrace after exposure to the ambient environment, which is an indication of uniform surface oxide coverage. An oxide-free topological insulator surface was exposed using tip-induced etching. By comparing surface conduction on a fresh surface versus a surface exposed to air, we observed a minor change in resistance when surface oxide was present. The current density varied with applied load on the oxidized surface, which implies that the topological surface states respond to tip-induced pressure even though surface oxide is present. From these results, we conclude that surface oxidation in air has a negligible effect on surface conductance in topological insulators.
Bulk and boundary invariants for complex topological insulators from K-theory to physics
Prodan, Emil
2016-01-01
This monograph offers an overview of rigorous results on fermionic topological insulators from the complex classes, namely, those without symmetries or with just a chiral symmetry. Particular focus is on the stability of the topological invariants in the presence of strong disorder, on the interplay between the bulk and boundary invariants and on their dependence on magnetic fields. The first part presents motivating examples and the conjectures put forward by the physics community, together with a brief review of the experimental achievements. The second part develops an operator algebraic approach for the study of disordered topological insulators. This leads naturally to use analysis tools from K-theory and non-commutative geometry, such as cyclic cohomology, quantized calculus with Fredholm modules and index pairings. New results include a generalized Streda formula and a proof of the delocalized nature of surface states in topological insulators with non-trivial invariants. The concluding chapter connect...
Quantum Hall states stabilized in semi-magnetic bilayers of topological insulators
Yoshimi, R.; Yasuda, K.; Tsukazaki, A.; Takahashi, K. S.; Nagaosa, N.; Kawasaki, M.; Tokura, Y.
2015-01-01
By breaking the time-reversal symmetry in three-dimensional topological insulators with the introduction of spontaneous magnetization or application of magnetic field, the surface states become gapped, leading to quantum anomalous Hall effect or quantum Hall effect, when the chemical potential locates inside the gap. Further breaking of inversion symmetry is possible by employing magnetic topological insulator heterostructures that host non-degenerate top and bottom surface states. Here we demonstrate the tailored-material approach for the realization of robust quantum Hall states in the bilayer system, in which the cooperative or cancelling combination of the anomalous and ordinary Hall responses from the respective magnetic and non-magnetic layers is exemplified. The appearance of quantum Hall states at filling factor 0 and +1 can be understood by the relationship of energy band diagrams for the two independent surface states. The designable heterostructures of magnetic topological insulator may explore a new arena for intriguing topological transport and functionality. PMID:26497065
Edge states and integer quantum Hall effect in topological insulator thin films.
Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing
2015-08-25
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.
Men'shov, Vladimir N.; Tugushev, Victor V.; Chulkov, Evgueni V.
2016-05-01
In this letter we theoretically demonstrate how an interface perturbation and size effect can be used to manipulate the transport properties of semiconductor heterostructures composed of a thin film of a three-dimensional topological insulator (TI) doped with magnetic impurities and sandwiched between topologically normal insulators. In the framework of a continual scheme, we argue that electron states of the TI film are strongly dominated by its thickness and magnetization as well as by an interface potential whose variation can lead to the modification of topological properties of the heterostructure. This opens diverse possibilities to efficiently tune intrinsic Hall conductivity in the system. We calculate a phase diagram of the heterostructure, which demonstrates a series of quantum transitions between distinct regimes of conductivity. We derive the anomalous Hall conductivity and the spin Hall conductivity dependences on the chemical potential. Applicability conditions of the used approach are also discussed.
Energy Technology Data Exchange (ETDEWEB)
Liu, Wenqing [Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); York-Nanjing Joint Centre for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China); Physics Department, Hong Kong University (Hong Kong); He, Liang; Zhang, Rong, E-mail: yongbing.xu@york.ac.uk, E-mail: rzhang@nju.edu.cn, E-mail: wang@seas.ucla.edu [York-Nanjing Joint Centre for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhou, Yan [York-Nanjing Joint Centre for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China); Physics Department, Hong Kong University (Hong Kong); Murata, Koichi; Wang, Kang L., E-mail: yongbing.xu@york.ac.uk, E-mail: rzhang@nju.edu.cn, E-mail: wang@seas.ucla.edu [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Onbasli, Mehmet C.; Ross, Caroline A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Jiang, Ying; Wang, Yong [Centre of Electron Microscopy, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 (China); Xu, Yongbing, E-mail: yongbing.xu@york.ac.uk, E-mail: rzhang@nju.edu.cn, E-mail: wang@seas.ucla.edu [Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); York-Nanjing Joint Centre for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 (China)
2016-05-15
One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T{sub c}). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi{sub 2}Se{sub 3} by means of proximity to the high-T{sub c} ferrimagnetic insulator (FMI) Y{sub 3}Fe{sub 5}O{sub 12} and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi{sub 2−x}Cr{sub x}Se{sub 3}/Y{sub 3}Fe{sub 5}O{sub 12} interface. We found that the Bi{sub 2−x}Cr{sub x}Se{sub 3} grown on Y{sub 3}Fe{sub 5}O{sub 12}(111) predominately contains Cr{sup 3+} cations, and the spin direction of the Cr{sup 3+} is aligned parallel to that of tetrahedral Fe{sup 3+} of the YIG, revealing a ferromagnetic exchange coupling between the Bi{sub 2−x}Cr{sub x}Se{sub 3} and the Y{sub 3}Fe{sub 5}O{sub 12}.
Krein signatures of transfer operators for half-space topological insulators
Schulz-Baldes, Hermann; Villegas-Blas, Carlos
2016-10-01
We propose a complementary point of view on the topological invariants of two-dimensional tight-binding models restricted to half-spaces. The transfer operators for such systems are J-unitary on a infinite dimensional Krein space ({ K },J) and, for energies in the bulk gap, only have discrete spectrum on the unit circle. These eigenvalues have Krein inertia which can be used to define topological invariants determining the nature of the surface modes and allowing to distinguish different topological phases. This is illustrated by numerical results.
A computational non-commutative geometry program for disordered topological insulators
Prodan, Emil
2017-01-01
This work presents a computational program based on the principles of non-commutative geometry and showcases several applications to topological insulators. Noncommutative geometry has been originally proposed by Jean Bellissard as a theoretical framework for the investigation of homogeneous condensed matter systems. Recently, this approach has been successfully applied to topological insulators, where it facilitated many rigorous results concerning the stability of the topological invariants against disorder. In the first part of the book the notion of a homogeneous material is introduced and the class of disordered crystals defined together with the classification table, which conjectures all topological phases from this class. The manuscript continues with a discussion of electrons’ dynamics in disordered crystals and the theory of topological invariants in the presence of strong disorder is briefly reviewed. It is shown how all this can be captured in the language of noncommutative geometry using the co...
Katsura, Hosho
2016-01-01
We study a wide class of free-fermion systems on a hypercubic lattice in spatial dimensions $d\\ge 1$. When the system is insulating, the topological properties, e.g., the integral quantization of the topological invariant, are protected by certain symmetries of the Hamiltonian against disorder. This generic feature is characterized by a generalized index theorem which is a noncommutative analogue of the Atiyah-Singer index theorem. The noncommutative index defined in terms of a pair of projections gives a precise formula for the topological invariant in each symmetry class in any dimension ($d \\ge 1$). The analysis of the index reproduces Bott periodicity and possible values of topological invariants in the classification table of topological insulators and superconductors. We also prove that the indices are robust against perturbations that do not break the symmetry of the unperturbed Hamiltonian, provided the Fermi level lies in a spectral gap or a mobility gap.
Liu, Luqiao
2016-10-01
Spin orbit interactions give rise to interesting physics phenomena in solid state materials such as the spin Hall effect (SHE) and topological insulator surface states. Those effects have been extensively studied using various electrical detection methods. However, to date most experiments focus only on characterizing electrons near the Fermi surface, while spin-orbit interaction is expected to be energy dependent. Here we developed a tunneling spectroscopy technique to measure spin Hall materials and topological insulators under finite bias voltages. By electrically injecting spin polarized electrons into spin Hall metals or topological insulators using tunnel junctions and measuring the induced transverse voltage, we are able to study SHE in typical 5d transition metals and the spin momentum locking in topological insulators. For spin Hall effect metals, the magnitude of the spin Hall angle has been a highly controversial topic in previous studies. Results obtained from various techniques can differ by more than an order of magnitude. Our results from this transport measurement turned out to be consistent with the values obtained from spin Hall torque measurements, which can help to address the long debating issue. Besides the magnitude, the voltage dependent spectra from our experiment also provide useful information in distinguishing between different potential mechanisms. Finally, because of the impedance matching capability of tunnel junctions, the spin polarized tunneling technique can also be used as a powerful tool to measure resistive materials such as the topological insulators. Orders of magnitude improvement in the effective spin Hall angle was demonstrated through our measurement
Band inversion mechanism in topological insulators: A guideline for materials design
Zhu, Zhiyong
2012-06-01
Alteration of the topological order by band inversion is a key ingredient of a topologically nontrivial material. Using first-principles calculations for HgTe, PtScBi, and Bi2Se3, we argue that it is not accurate to ascribe the band inversion to the spin-orbit coupling. Instead, scalar relativistic effects and/or lattice distortions are found to be essential. Therefore, the search for topologically nontrivial materials should focus on band shifts due to these mechanisms rather than spin-orbit coupling. We propose an effective scheme to search for new topological insulators.
The d-p band-inversion topological insulator in bismuth-based skutterudites.
Yang, Ming; Liu, Wu-Ming
2014-05-30
Skutterudites, a class of materials with cage-like crystal structure which have received considerable research interest in recent years, are the breeding ground of several unusual phenomena such as heavy fermion superconductivity, exciton-mediated superconducting state and Weyl fermions. Here, we predict a new topological insulator in bismuth-based skutterudites, in which the bands involved in the topological band-inversion process are d- and p-orbitals, which is distinctive with usual topological insulators, for instance in Bi2Se3 and BiTeI the bands involved in the topological band-inversion process are only p-orbitals. Due to the present of large d-electronic states, the electronic interaction in this topological insulator is much stronger than that in other conventional topological insulators. The stability of the new material is verified by binding energy calculation, phonon modes analysis, and the finite temperature molecular dynamics simulations. This new material can provide nearly zero-resistivity signal current for devices and is expected to be applied in spintronics devices.
Surface States Transport in Topological Insulator Bi_{0.83}Sb_{0.17} Nanowires
Konopko, L. A.; Nikolaeva, A. A.; Huber, T. E.; Ansermet, J.-P.
2016-12-01
We investigate the transport properties of topological insulator (TI) Bi_{0.83}Sb_{0.17} nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 μ m are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crystals with (10bar{1}1) orientation along the wire axis are produced. Bi_{0.83}Sb_{0.17} is a narrow-gap semiconductor with an energy gap at the L point of the Brillouin zone, Δ E = 21 meV. The resistance of the samples increases with decreasing temperature, but a decrease in resistance is observed at low temperatures. This effect is a clear manifestation of TI properties (i.e., the presence of a highly conducting zone on the TI surface). When the diameter of the nanowire decreases, the energy gap Δ E grows as 1 / d (for diameter d = 1.1 μ m and d =75 nm Δ E = 21 and 45 meV, respectively), which proves the presence of the quantum size effect in these samples. We investigate the magnetoresistance of Bi_{0.83}Sb_{0.17} nanowires at various magnetic field orientations. Shubnikov-de Haas oscillations are observed in Bi_{0.83}Sb_{0.17} nanowires at T = 1.5 K, demonstrating the existence of high mobility (μ_S = 26{,}700-47{,}000 cm^2V^{-1}s^{-1}) two-dimensional (2D) carriers in the surface areas of the nanowires, which are nearly perpendicular to the C_3 axis. From the linear dependence of the nanowire conductance on nanowire diameter at T = 4.2 K, the square resistance R_sq of the surface states of the nanowires is obtained (R_sq =70 Ohm).
Lapa, Matthew F.; Hughes, Taylor L.
2017-09-01
We study perturbative and global anomalies at the boundaries of bosonic analogs of integer quantum Hall (BIQH) and topological insulator (BTI) phases using a description of the boundaries of these phases in terms of a nonlinear sigma model (NLSM) with Wess-Zumino term. One of the main results of the paper is that these anomalies are robust against arbitrary smooth deformations of the target space of the NLSM which describes the phase, provided that the deformations also respect the symmetry of the phase. In the first part of the paper, we discuss the perturbative U(1 ) anomaly at the boundary of BIQH states in all odd (space-time) dimensions. In the second part, we study global anomalies at the boundary of BTI states in even dimensions. In a previous work [Lapa et al., Phys. Rev. B 95, 035149 (2017), 10.1103/PhysRevB.95.035149] we argued that the boundary of the BTI phase exhibits a global anomaly which is an analog of the parity anomaly of Dirac fermions in three dimensions. Here, we elevate this argument to a proof for the boundary of the two-dimensional BTI state by explicitly computing the partition function of the gauged NLSM describing the boundary. We then use the powerful equivariant localization technique to show that this global anomaly is robust against all smooth deformations of the target space of the NLSM which preserve the U(1 ) ⋊Z2 symmetry of the BTI state. We also comment on the difficulties of generalizing this latter proof to higher dimensions. Finally, we discuss the expected low-energy behavior of the boundary theories studied in this paper when the coupling constants are allowed to flow under the renormalization group.
Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P
2015-11-20
We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.
Quantum and Classical Approaches in Graphene and Topological Insulators
DEFF Research Database (Denmark)
Posvyanskiy, Vladimir
mechanical study, this approach can give simple and pictorial explanation of the topological edge states. In our work we find the semiclassical orbits for the samples of different geometries and also discuss the influence of the quantum effects, the Berry phase, on the semiclassical electron dynamics....... Finally, we try to find the semiclassical mechanism responsible for topological protection of the edge states....
Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures.
Vaklinova, Kristina; Hoyer, Alexander; Burghard, Marko; Kern, Klaus
2016-04-13
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac Fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphene, enabled by its intimate coupling to an ultrathin Bi2Te2Se nanoplatelet within a van der Waals epitaxial heterostructure. The spin switching signal, whose magnitude scales inversely with temperature, is detectable up to ∼15 K. Our findings establish topological insulators as prospective future components of spintronic devices wherein spin manipulation is achieved by purely electrical means.
Lai, Kueifu; Bo, Xiao; Anlage, Steven; Shvets, Gennady
2016-01-01
Electromagnetic (EM) waves propagating through an inhomogeneous medium inevitably scatter whenever electromagnetic properties of the medium change on the scale of a single wavelength. This fundamental phenomenon constrains how optical structures are designed and interfaced with each other. Recent theoretical work indicates that electromagnetic structures collectively known as photonic topological insulators (PTIs) can be employed to overcome this fundamental limitation, thereby paving the way for ultra-compact photonic structures that no longer have to be wavelength-scale smooth. Here we present the first experimental demonstration of a photonic delay line based on topologically protected surface electromagnetic waves (TPSWs) between two PTIs which are the EM counterparts of the quantum spin-Hall topological insulators in condensed matter. Unlike conventional guided EM waves that do not benefit from topological protection, TPSWs are shown to experience multi-wavelength reflection-free time delays when detoure...
Opportunities in chemistry and materials science for topological insulators and their nanostructures
Kong, Desheng
2011-10-24
Electrical charges on the boundaries of topological insulators favour forward motion over back-scattering at impurities, producing low-dissipation, metallic states that exist up to room temperature in ambient conditions. These states have the promise to impact a broad range of applications from electronics to the production of energy, which is one reason why topological insulators have become the rising star in condensed-matter physics. There are many challenges in the processing of these exotic materials to use the metallic states in functional devices, and they present great opportunities for the chemistry and materials science research communities. © 2011 Macmillan Publishers Limited. All rights reserved.
Unified Description of Dirac Electrons on a Curved Surface of Topological Insulators
Takane, Yositake; Imura, Ken-Ichiro
2013-07-01
Existence of a protected surface state described by a massless Dirac equation is a defining property of the topological insulator. Though this statement can be explicitly verified on an idealized flat surface, it remains to be addressed to what extent it could be general. On a curved surface, the surface Dirac equation is modified by the spin connection terms. Here, in the light of the differential geometry, we give a general framework for constructing the surface Dirac equation starting from the Hamiltonian for bulk topological insulators. The obtained unified description clarifies the physical meaning of the spin connection.
The D3-probe-D7 brane holographic fractional topological insulator
Kristjansen, Charlotte
2016-01-01
The D3-probe-D7 brane system, oriented so as to have 2+1-dimensional Poincare symmetry, is argued to be the holographic representation of a strongly correlated fractional topological insulator which exhibits a zero-field quantized Hall effect with half-units of Hall conductivity. The phase diagram of the system with charge density and external magnetic field is found and, as well as charge gapped quantum Hall states, it exhibits metallic and semi-metallic phases with interesting behaviours. The relationship of this to other models of fractional topological insulators is discussed.
Geometrically induced reversion of Hall current in a topological insulator cavity
Campos, W. H.; Moura-Melo, W. A.; Fonseca, J. M.
2017-02-01
An electric charge near the surface of a topological insulator induces an image magnetic monopole. Here, we show that if the topological insulator surface has a negative curvature, namely in the case of a semispherical cavity, the induced Hall current reverses its rotation as the electric charge crosses the semisphere geometric focus. Such a reversion is shown to be equivalent of inverting the charge of the image magnetic monopole. We also discuss upon the case of a semicylindrical cavity, where Hall current reversion appears to be feasible of probing in realistic experiments.
Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik
2014-03-12
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.
Oliveira, J R S; Furtado, C; Sergeenkov, S
2016-01-01
In this paper we consider modification of electronic properties of graphene-based topological insulator in the presence of wedge disclination and magnetic field by adopting the Kane-Mele model with intrinsic spin-orbit coupling. Using the properly defined Dirac-Weyl equation for this system, an exact solution for the Landau levels is obtained. The influence of the topological defect on the evolution of Landau levels is discussed.
Burset, Pablo; Lu, Bo; Tkachov, Grigory; Tanaka, Yukio; Hankiewicz, Ewelina M.; Trauzettel, Björn
2015-11-01
The proximity-induced pair potential in a topological insulator-superconductor hybrid features an interesting superposition of a conventional spin-singlet component from the superconductor and a spin-triplet one induced by the surface state of the topological insulator. This singlet-triplet superposition can be altered by the presence of a magnetic field. We study the interplay between topological order and superconducting correlations performing a symmetry analysis of the induced pair potential, using Green functions techniques to theoretically describe ballistic junctions between superconductors and topological insulators under magnetic fields. We relate a change in the conductance from a gapped profile into one with a zero-energy peak with the transition into a topologically nontrivial regime where the odd-frequency triplet pairing becomes the dominant component in the pair potential. The nontrivial regime, which provides a signature of odd-frequency triplet superconductivity, is reached for an out-of-plane effective magnetization with strength comparable to the chemical potential of the superconductor or for an in-plane one, parallel to the normal-superconductor interface, with strength of the order of the superconducting gap. Strikingly, in the latter case, a misalignment with the interface yields an asymmetry with the energy in the conductance unless the total contribution of the topological surface state is considered.
Nechaev, I. A.; Krasovskii, E. E.
2016-11-01
We present a method to microscopically derive a small-size k .p Hamiltonian in a Hilbert space spanned by physically chosen ab initio spinor wave functions. Without imposing any complementary symmetry constraints, our formalism equally treats three- and two-dimensional systems and simultaneously yields the Hamiltonian parameters and the true Z2 topological invariant. We consider bulk crystals and thin films of Bi2Se3 , Bi2Te3 , and Sb2Te3 . It turns out that the effective continuous k .p models with open boundary conditions often incorrectly predict the topological character of thin films.
Square root of gerbe holonomy and invariants of time-reversal-symmetric topological insulators
Gawȩdzki, Krzysztof
2017-10-01
The Feynman amplitudes with the two-dimensional Wess-Zumino action functional have a geometric interpretation as bundle gerbe holonomy. We present details of the construction of a distinguished square root of such holonomy and of a related 3 d-index and briefly recall the application of those to the building of topological invariants for time-reversal-symmetric two- and three-dimensional crystals, both static and periodically forced.
Quantum Monte Carlo simulation of topological phase transitions
Yamamoto, Arata; Kimura, Taro
2016-12-01
We study the electron-electron interaction effects on topological phase transitions by the ab initio quantum Monte Carlo simulation. We analyze two-dimensional class A topological insulators and three-dimensional Weyl semimetals with the long-range Coulomb interaction. The direct computation of the Chern number shows the electron-electron interaction modifies or extinguishes topological phase transitions.
Quantum Monte Carlo simulation of topological phase transitions
Yamamoto, Arata
2016-01-01
We study the electron-electron interaction effects on topological phase transitions by the ab-initio quantum Monte Carlo simulation. We analyze two-dimensional class A topological insulators and three-dimensional Weyl semimetals with the long-range Coulomb interaction. The direct computation of the Chern number shows the electron-electron interaction modifies or extinguishes topological phase transitions.
Lattice-matched heterojunctions between topological and normal insulators: A first-principles study
Lee, Hyungjun; Yazyev, Oleg V.
2017-02-01
Gapless boundary modes at the interface between topologically distinct regions are one of the most salient manifestations of topology in physics. Metallic boundary states of time-reversal-invariant topological insulators (TIs), a realization of topological order in condensed matter, have been of much interest not only due to such a fundamental nature, but also due to their practical significance. These boundary states are immune to backscattering and localization owing to their topological origin, thereby opening up the possibility to tailor them for potential uses in spintronics and quantum computing. The heterojunction between a TI and a normal insulator (NI) is a representative playground for exploring such a topologically protected metallic boundary state and expected to constitute a building block for future electronic and spintronic solid-state devices based on TIs. Here, we report a first-principles study of two experimentally realized lattice-matched heterojunctions between TIs and NIs, Bi2Se3 (0001)/InP(111) and Bi2Te3 (0001)/BaF2(111). We evaluate the band offsets at these interfaces from many-body perturbation theory within the G W approximation as well as density-functional theory. Furthermore, we investigate the topological interface states, demonstrating that at these lattice-matched heterointerfaces, they are strictly localized and their helical spin textures are as well preserved as those at the vacuum-facing surfaces. These results taken together may help in designing devices relying on spin-helical metallic boundary states of TIs.
Xu, Jin-Long; Sun, Yi-Jian; He, Jing-Liang; Wang, Yan; Zhu, Zhao-Jie; You, Zhen-Yu; Li, Jian-Fu; Chou, Mitch M C; Lee, Chao-Kuei; Tu, Chao-Yang
2015-10-07
Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi2Te3 exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi2Te3 sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm(2) at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO4 laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi2Te3 is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices.
Energy Technology Data Exchange (ETDEWEB)
Si, Weidong, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun; Ozaki, Toshinori; Gu, Genda; Li, Qiang, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov [Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
2015-08-31
Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.
Electrical Probing of Inherent Spin Polarization in a Topological Insulator with Electrical Gating
Lee, Joon Sue; Richardella, Anthony; Samarth, Nitin
2015-03-01
The hallmark of a time-reversal symmetry protected three-dimensional topological insulator is the helically spin-textured surface state. Although electrical detection of spin polarization in topological insulators has been demonstrated very recently, there have not been any electrical measurements to demonstrate the entire mapping of the spin polarization throughout the surface state. We report the electrical probing of the spin-polarized surface state using a magnetic tunnel junction as a spin detector while the chemical potential of a topological insulator (Bi,Sb)2Te3 is tuned by back gating. Hysteretic spin signals were observed as the magnetization of the detector ferromagnet (permalloy) switches with in-plane magnetic field. Changing the direction of bias current through the topological insulator channel flips the direction of the spin polarization, resulting in the reverse of sign of the detected spin signals. We demonstrate the control of the Fermi energy, which has importance not only in further understanding of the spin-momentum locking in the surface state but also in possible electrical tuning of the spin polarization for potential spin-based devices. Supported by C-SPIN & DARPA/SRC.
Wang, Yu-Qi; Wu, Xu; Wang, Ye-Liang; Shao, Yan; Lei, Tao; Wang, Jia-Ou; Zhu, Shi-Yu; Guo, Haiming; Zhao, Ling-Xiao; Chen, Gen-Fu; Nie, Simin; Weng, Hong-Ming; Ibrahim, Kurash; Dai, Xi; Fang, Zhong; Gao, Hong-Jun
2016-07-01
2D materials with heterolayered structures beyond graphene are explored. A theoretically predicted superconductor-topological insulator-normal metal heterolayered structure is realized experimentally. The generated hybrid structure HfTe3 /HfTe5 /Hf has potential applications in both quantum-spin Hall effect-based and Majorana-based devices.
Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.
Feng, Xiao; Feng, Yang; Wang, Jing; Ou, Yunbo; Hao, Zhenqi; Liu, Chang; Zhang, Zuocheng; Zhang, Liguo; Lin, Chaojing; Liao, Jian; Li, Yongqing; Wang, Li-Li; Ji, Shuai-Hua; Chen, Xi; Ma, Xucun; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Xue, Qi-Kun
2016-08-01
The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.
Higher dimensional quantum Hall effect as A-class topological insulator
Directory of Open Access Journals (Sweden)
Kazuki Hasebe
2014-09-01
Full Text Available We perform a detail study of higher dimensional quantum Hall effects and A-class topological insulators with emphasis on their relations to non-commutative geometry. There are two different formulations of non-commutative geometry for higher dimensional fuzzy spheres: the ordinary commutator formulation and quantum Nambu bracket formulation. Corresponding to these formulations, we introduce two kinds of monopole gauge fields: non-abelian gauge field and antisymmetric tensor gauge field, which respectively realize the non-commutative geometry of fuzzy sphere in the lowest Landau level. We establish connection between the two types of monopole gauge fields through Chern–Simons term, and derive explicit form of tensor monopole gauge fields with higher string-like singularity. The connection between two types of monopole is applied to generalize the concept of flux attachment in quantum Hall effect to A-class topological insulator. We propose tensor type Chern–Simons theory as the effective field theory for membranes in A-class topological insulators. Membranes turn out to be fractionally charged objects and the phase entanglement mediated by tensor gauge field transforms the membrane statistics to be anyonic. The index theorem supports the dimensional hierarchy of A-class topological insulator. Analogies to D-brane physics of string theory are discussed too.
Higher dimensional quantum Hall effect as A-class topological insulator
Energy Technology Data Exchange (ETDEWEB)
Hasebe, Kazuki, E-mail: khasebe@stanford.edu
2014-09-15
We perform a detail study of higher dimensional quantum Hall effects and A-class topological insulators with emphasis on their relations to non-commutative geometry. There are two different formulations of non-commutative geometry for higher dimensional fuzzy spheres: the ordinary commutator formulation and quantum Nambu bracket formulation. Corresponding to these formulations, we introduce two kinds of monopole gauge fields: non-abelian gauge field and antisymmetric tensor gauge field, which respectively realize the non-commutative geometry of fuzzy sphere in the lowest Landau level. We establish connection between the two types of monopole gauge fields through Chern–Simons term, and derive explicit form of tensor monopole gauge fields with higher string-like singularity. The connection between two types of monopole is applied to generalize the concept of flux attachment in quantum Hall effect to A-class topological insulator. We propose tensor type Chern–Simons theory as the effective field theory for membranes in A-class topological insulators. Membranes turn out to be fractionally charged objects and the phase entanglement mediated by tensor gauge field transforms the membrane statistics to be anyonic. The index theorem supports the dimensional hierarchy of A-class topological insulator. Analogies to D-brane physics of string theory are discussed too.
Quantum Monte Carlo study of strange correlator in interacting topological insulators
Wu, Han-Qing; He, Yuan-Yao; You, Yi-Zhuang; Xu, Cenke; Meng, Zi Yang; Lu, Zhong-Yi
Distinguishing the nontrivial symmetry-protected topological (SPT) phase from the trivial insulator phase in the presence of electron-electron interaction is an urgent question to the study of topological insulators. In this work, we demonstrate that the strange correlator is a sensitive diagnosis to detect SPT states in interacting systems. Employing large-scale quantum Monte Carlo (QMC) simulations, we investigate the interaction-driven quantum phase transition in the Kane-Mele-Hubbard model. The transition from the quantum spin Hall insulator at weak interaction to an antiferromagnetic Mott insulator at strong interaction can be readily detected by the momentum space behavior of the strange correlator in single-particle, spin, and pairing sectors. The interaction e?ects on the symmetry-protected edge states in various sectors are well captured in the QMC measurements of strange correlators. Moreover, we demonstrate that the strange correlator is technically easier to implement in QMC and more robust in performance than other proposed numerical diagnoses for interacting topological states, as only static correlations are needed. The attempt in this work paves the way for using the strange correlator to study interaction-driven topological phase transitions.
Topological Insulators and Nematic Phases from Spontaneous Symmetry Breaking in
Energy Technology Data Exchange (ETDEWEB)
Sun, K.
2010-05-26
We investigate the stability of a quadratic band-crossing point (QBCP) in 2D fermionic systems. At the non-interacting level, we show that a QBCP exists and is topologically stable for a Berry flux {-+}2{pi}, if the point symmetry group has either fourfold or sixfold rotational symmetries. This putative topologically stable free-fermion QBCP is marginally unstable to arbitrarily weak shortrange repulsive interactions. We consider both spinless and spin-1/2 fermions. Four possible ordered states result: a quantum anomalous Hall phase, a quantum spin Hall phase, a nematic phase, and a nematic-spin-nematic phase.
Quantized Response and Topological Magnetic Insulators with Inversion Symmetry
Turner, A.M.; Zhang, Y.; Mong, R.S.K.; Vishwanath, A.
2012-01-01
We study three-dimensional insulators with inversion symmetry in which other point group symmetries, such as time reversal, are generically absent. We find that certain information about such materials’ behavior is determined by just the eigenvalues under inversion symmetry of occupied states at
Quantized Response and Topological Magnetic Insulators with Inversion Symmetry
Turner, A.M.; Zhang, Y.; Mong, R.S.K.; Vishwanath, A.
2012-01-01
We study three-dimensional insulators with inversion symmetry in which other point group symmetries, such as time reversal, are generically absent. We find that certain information about such materials’ behavior is determined by just the eigenvalues under inversion symmetry of occupied states at tim
Note on "Quantum superconducting criticality in graphene and topological insulators"
Roy, Bitan; Herbut, Igor F
2016-01-01
We correct our previous conclusion regarding the fate of a charged quantum critical point across the superconducting transition for two dimensional massless Dirac fermion. Within the leading order $\\epsilon$ expansion, we now find that the requisite number of four-component Dirac fermion flavors ($N_f$) for the continuous phase transition through a charged critical point is $N_f>18.2699$. For $N_f\\geq1/2$, the critical number of bosonic flavors for this transition is significantly reduced as compared to the value determined in the absence of the Dirac fermions in the theory.
Induced superconductivity in the topological insulator mercury telluride
Energy Technology Data Exchange (ETDEWEB)
Maier, Luis
2015-07-01
The combination of a topological insulator (TI) and a superconductor (S), which together form a TI/S interface, is expected to influence the possible surface states in the TI. It is of special interest, if the theoretical prediction of zero energy Majorana states in this system is verifiable. This thesis presents the experimental realization of such an interface between the TI strained bulk HgTe and the S Nb and studies if the afore mentioned expectations are met. As these types of interfaces were produced for the first time the initial step was to develop a new lithographic process. Optimization of the S deposition technique as well as the application of cleaning processes allowed for reproducible fabrication of structures. In parallel the measurement setup was upgraded to be able to execute the sensitive measurements at low energy. Furthermore several filters have been implemented into the system to reduce high frequency noise and the magnetic field control unit was additionally replaced to achieve the needed resolution in the μT range. Two kinds of basic geometries have been studied: Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs). A JJ consists of two Nb contacts with a small separation on a HgTe layer. These S/TI/S junctions are one of the most basic structures possible and are studied via transport measurements. The transport through this geometry is strongly influenced by the behavior at the two S/TI interfaces. In voltage dependent differential resistance measurements it was possible to detect multiple Andreev reflections in the JJ, indicating that electrons and holes are able to traverse the HgTe gap between both interfaces multiple times while keeping phase coherence. Additionally using BTK theory it was possible to extract the interface transparency of several junctions. This allowed iterative optimization for the highest transparency via lithographic improvements at these interfaces. The increased transparency and
Durganandini, P.
2015-03-01
We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.
BaSn2: A wide-gap strong topological insulator
Young, Steve M.; Manni, S.; Shao, Junping; Canfield, Paul C.; Kolmogorov, Aleksey N.
2017-02-01
BaSn2 has been shown to form as layers of buckled stanene intercalated by barium ions. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn2 has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here we present a detailed investigation of BaSn2, using both ab initio and experimental methods. First-principles calculations demonstrate that this overlooked material is indeed a strong, wide-gap topological insulator with a bulk band gap of 200 meV. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through ab initio modeling and synthesis experiments, we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals.
Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds
Energy Technology Data Exchange (ETDEWEB)
Kim, Jeongwoo; Jhi, Seung-Hoon, E-mail: jhish@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
2015-05-21
The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge{sub 2}Sb{sub 2}Te{sub 5} and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure.
Emergence of a weak topological insulator from the BixSey family
Majhi, Kunjalata; Pal, Koushik; Lohani, Himanshu; Banerjee, Abhishek; Mishra, Pramita; Yadav, Anil K.; Ganesan, R.; Sekhar, B. R.; Waghmare, Umesh V.; Anil Kumar, P. S.
2017-04-01
We report the emergence of a weak topological insulator (WTI), BiSe, of the Bi-chalcogenide family with an indirect bandgap of 42 meV. Its structural unit consists of a bismuth bilayer (Bi2), a known quantum spin hall insulator sandwiched between two units of Bi2Se3 which are three dimensional strong topological insulators. Our density functional theory calculations confirm the WTI phase and angle resolved photo-emission spectroscopy measurements carried out on cleaved single crystal flakes show Rashba states that closely agree with our theoretical predictions. Finally, we present a comparison between electronic and magneto-transport properties measured on single crystal flakes and thin films of BiSe.
Elastic scattering of surface states on three-dimensional topological insulators
Institute of Scientific and Technical Information of China (English)
Wang Jing; Zhu Bang-Fen
2013-01-01
Topological insulators as a new type of quantum matter materials are characterized by a full insulating gap in the bulk and gapless edge/surface states protected by the time-reversal symmetry.We propose that the interference patterns caused by the elastic scattering of defects or impurities are dominated by the surface states at the extremal points on the constant energy contour.Within such a formalism,we summarize our recent theoretical investigations on the elastic scattering of topological surface states by various imperfections,including non-magnetic impurities,magnetic impurities,step edges,and various other defects,in comparison with the recent related experiments in typical topological materials such as BiSb alloys,Bi2Te3,and Bi2Se3 crystals.
Robust spin-polarized midgap states at step edges of topological crystalline insulators
Sessi, Paolo; Di Sante, Domenico; Szczerbakow, Andrzej; Glott, Florian; Wilfert, Stefan; Schmidt, Henrik; Bathon, Thomas; Dziawa, Piotr; Greiter, Martin; Neupert, Titus; Sangiovanni, Giorgio; Story, Tomasz; Thomale, Ronny; Bode, Matthias
2016-12-01
Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three-dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight-binding calculations identify them as spin-polarized flat bands connecting two Dirac points. This nontrivial origin provides the 1D midgap states with inherent stability and protects them from backscattering. We experimentally show that this stability results in a striking robustness to defects, strong magnetic fields, and elevated temperature.
Martín-Ruiz, Alberto; Urrutia, Luis F
2016-01-01
A general technique to analyze the classical interaction between ideal topological insulators, and electromagnetic sources and fields, has been previously elaborated. Nevertheless it is not immediately applicable in the laboratory as it fails to describe real ponderable media. In this work we provide a description of real topologically insulating materials taking into account their dielectric and magnetic properties. For inhomogeneous permittivity and permeability, the problem of finding the Green's function must be solved in an ad hoc manner. Nevertheless, the physically feasible cases of piecewise constant $\\varepsilon, \\mu$ and $\\theta$ make the problem tractable, where $\\theta$ encodes the topological magnetoelectric polarizability properties of the medium. To this end we employ the Green's function method to find the fields resulting form the interaction between these materials and electromagnetic sources. Furthermore we exploit the fact that in the cases here studied, the full Green's function can be su...
Realizing and Detecting a Topological Insulator in the AIII Symmetry Class
Velasco, Carlos G.; Paredes, Belén
2017-09-01
Topological insulators in the AIII (chiral unitary) symmetry class lack experimental realization. Moreover, fractionalization in one-dimensional topological insulators has not been yet directly observed. Our work might open possibilities for both challenges. We propose a one-dimensional model realizing the AIII symmetry class which can be realized in current experiments with ultracold atomic gases. We further report on a distinctive property of topological edge modes in the AIII class: in contrast to those in the well-studied BDI (chiral orthogonal) class, they have nonzero momentum. Exploiting this feature we propose a path for the detection of fractionalization. A fermion added to an AIII system splits into two halves localized at opposite momenta, which can be detected by imaging the momentum distribution.
Z2 Invariants of Topological Insulators as Geometric Obstructions
Fiorenza, Domenico; Monaco, Domenico; Panati, Gianluca
2016-05-01
We consider a gapped periodic quantum system with time-reversal symmetry of fermionic (or odd) type, i.e. the time-reversal operator squares to -1. We investigate the existence of periodic and time-reversal invariant Bloch frames in dimensions 2 and 3. In 2 d, the obstruction to the existence of such a frame is shown to be encoded in a Z_2-valued topological invariant, which can be computed by a simple algorithm. We prove that the latter agrees with the Fu-Kane index. In 3 d, instead, four Z_2 invariants emerge from the construction, again related to the Fu-Kane-Mele indices. When no topological obstruction is present, we provide a constructive algorithm yielding explicitly a periodic and time-reversal invariant Bloch frame. The result is formulated in an abstract setting, so that it applies both to discrete models and to continuous ones.
Topological Quantum Information Processing Mediated Via Hybrid Topogical Insulator Structures
2014-03-28
Matthew J. Gilbert, and Benjamin L. Lev, "Imaging Topologically Protected Transport with Quantum Degenerate Gases," Physical Review B 85 205422 (2012...from the Entanglement Spectrum," Physical Review B: Rapid Communications 86, 041401 (2012). 3 Qinglei Meng, Taylor L. Hughes, Matthew J. Gilbert...Josephson Effect and Electrically Controlled Magnetization in Quantum Spin Hall Edges," Physical Review B 86, 165110 (2012). 5 Youngseok Kim, E. M
Chen, C.-C.; Teague, M. L.; He, L.; Kou, X.; Lang, M.; Fan, W.; Woodward, N.; Wang, K.-L.; Yeh, N.-C.
2015-11-01
Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature {{T}{{c}}}2{{D}}, which is much higher than the bulk Curie temperature {{T}{{c}}}3{{D}} determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below {{T}{{c}}}2{{D}}, which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ {{T}{{c}}}3{{D}}. These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at {{T}{{c}}}3{{D}} ≪ T term stability of these topologically protected two-level states may find potential applications to quantum information technology.
Hong, Seung Sae
2012-03-27
A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.
Knolle, Johannes; Cooper, Nigel R
2017-03-03
Kondo insulating materials lie outside the usual dichotomy of weakly versus correlated-band versus Mott-insulators. They are metallic at high temperatures but resemble band insulators at low temperatures because of the opening of an interaction-induced band gap. The first discovered Kondo insulator (KI) SmB_{6} has been predicted to form a topological KI (TKI). However, since its discovery thermodynamic and transport anomalies have been observed that have defied a theoretical explanation. Enigmatic signatures of collective modes inside the charge gap are seen in specific heat, thermal transport, and quantum oscillation experiments in strong magnetic fields. Here, we show that TKIs are susceptible to the formation of excitons and magnetoexcitons. These charge neutral composite particles can account for long-standing anomalies in SmB_{6}.
Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3
Braun, Lukas; Mussler, Gregor; Hruban, Andrzej; Konczykowski, Marcin; Schumann, Thomas; Wolf, Martin; Münzenberg, Markus; Perfetti, Luca; Kampfrath, Tobias
2016-01-01
Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi2Se3 with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se–Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents. PMID:27796297
Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey
Takane, Daichi; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi
2016-08-01
Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.
Unravelling the local structure of topological crystalline insulators using hyperfine interactions
Phenomena emerging from relativistic electrons in solids have become one the main topical subjects in condensed matter physics. Among a wealth of intriguing new phenomena, several classes of materials have emerged including graphene, topological insulators and Dirac semi-metals. This project is devoted to one such class of materials, in which a subtle distortion of the crystalline lattice drives a material through different topological phases: Z$_{2}$ topological insulator (Z$_{2}$-TI), topological crystalline insulator (TCI), or ferroelectric Rashba semiconductor (FERS). We propose to investigate the local structure of Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te (with $\\textit{x}$ from 0 to 1) using a combination of experimental techniques based on hyperfine interactions: emission Mössbauer spectroscopy (eMS) and perturbed angular correlation spectroscopy (PAC). In particular, we propose to study the effect of composition ($\\textit{x}$ in Pb$_{1-x}$Sn$_{x}$Te and Ge$_{1-x}$Sn$_{x}$Te) on: \\\\ \\\\(1) the mag...
Martín-Ruiz, A.; Cambiaso, M.; Urrutia, L. F.
2016-10-01
A general technique to analyze the classical interaction between ideal topological insulators, and electromagnetic sources and fields, has been previously elaborated. Nevertheless it is not immediately applicable in the laboratory as it fails to describe real ponderable media. In this work we provide a description of real topologically insulating materials taking into account their dielectric and magnetic properties. For inhomogeneous permittivity and permeability, the problem of finding the Green's function must be solved in an ad hoc manner. Nevertheless, the physically feasible cases of piecewise constant ɛ , μ and θ make the problem tractable, where θ encodes the topological magnetoelectric polarizability properties of the medium. To this end we employ the Green's function method to find the fields resulting from the interaction between these materials and electromagnetic sources. Furthermore we exploit the fact that in the cases here studied, the full Green's function can be successfully found if the Green's function of the corresponding ponderable media with θ =0 is known. Our results satisfactorily reproduce previously existing ones and also generalize some others. The method here elaborated can be exploited to determine the electromagnetic fields for more general configurations aiming to measure the interaction between real 3D topological insulators and electromagnetic fields.
Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE
2013-01-01
Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other ph...
Enhancement of the Bulk Photovoltaic Effect in Topological Insulators
Tan, Liang Z.; Rappe, Andrew M.
2016-06-01
We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its magnitude is enhanced in the vicinity of the phase transition. These results are demonstrated with first principles density functional theory calculations of BiTeI and CsPbI3 under hydrostatic pressure, and explained with an analytical model, suggesting that this phenomenon remains robust across disparate material systems.
Topology optimized design for silicon-on-insulator mode converter
DEFF Research Database (Denmark)
Frellsen, Louise Floor; Frandsen, Lars Hagedorn; Ding, Yunhong
2015-01-01
The field of photonic integrated circuits (PICs) has attracted interest in recent years as they allow high device density while requiring only low operating power. The possibility of exploiting mode division multiplexing (MDM) in future optical communication networks is being investigated...... as a potential method for supporting the constantly increasing internet traffic demand [1]. Mode converters are important components necessary to support on-chip processing of MDM signals and multiple approaches has been followed in realizing such devices [2], [3]. Topology optimization (TO) [4] is a powerful...
Enhancement of the Bulk Photovoltaic Effect in Topological Insulators.
Tan, Liang Z; Rappe, Andrew M
2016-06-10
We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its magnitude is enhanced in the vicinity of the phase transition. These results are demonstrated with first principles density functional theory calculations of BiTeI and CsPbI_{3} under hydrostatic pressure, and explained with an analytical model, suggesting that this phenomenon remains robust across disparate material systems.
Thermoelectric characterization of individual bismuth selenide topological insulator nanoribbons
Tang, Hao; Wang, Xiaomeng; Xiong, Yucheng; Zhao, Yang; Zhang, Yin; Zhang, Yan; Yang, Juekuan; Xu, Dongyan
2015-04-01
Bismuth selenide (Bi2Se3) nanoribbons have attracted tremendous research interest recently to study the properties of topologically protected surface states that enable new opportunities to enhance the thermoelectric performance. However, the thermoelectric characterization of individual Bi2Se3 nanoribbons is rare due to the technological challenges in the measurements. One challenge is to ensure good contacts between the nanoribbon and electrodes in order to determine the thermal and electrical properties accurately. In this work, we report the thermoelectric characterization of individual Bi2Se3 nanoribbons via a suspended microdevice method. Through careful measurements, we have demonstrated that contact thermal resistance is negligible after the electron-beam-induced deposition (EBID) of platinum/carbon (Pt/C) composites at the contacts between the nanoribbon and electrodes. It is shown that the thermal conductivity of the Bi2Se3 nanoribbons is less than 50% of the bulk value over the whole measurement temperature range, which can be attributed to enhanced phonon boundary scattering. Our results indicate that intrinsic Bi2Se3 nanoribbons prepared in this work are highly doped n-type semiconductors, and therefore the Fermi level should be in the conduction band and no topological transport behavior can be observed in the intrinsic system.
Sato, T.; Segawa, Kouji; Kosaka, K.; Souma, S.; Nakayama, K.; Eto, K.; Minami, T.; Ando, Yoichi; Takahashi, T.
2011-11-01
The three-dimensional (3D) topological insulator is a novel quantum state of matter where an insulating bulk hosts a linearly dispersing surface state, which can be viewed as a sea of massless Dirac fermions protected by the time-reversal symmetry (TRS). Breaking the TRS by a magnetic order leads to the opening of a gap in the surface state, and consequently the Dirac fermions become massive. It has been proposed theoretically that such a mass acquisition is necessary to realize novel topological phenomena, but achieving a sufficiently large mass is an experimental challenge. Here we report an unexpected discovery that the surface Dirac fermions in a solid-solution system TlBi(S1-xSex)2 acquire a mass without explicitly breaking the TRS. We found that this system goes through a quantum phase transition from the topological to the non-topological phase, and, by tracing the evolution of the electronic states using the angle-resolved photoemission, we observed that the massless Dirac state in TlBiSe2 switches to a massive state before it disappears in the non-topological phase. This result suggests the existence of a condensed-matter version of the `Higgs mechanism' where particles acquire a mass through spontaneous symmetry breaking.
Quantum capacitance in topological insulators under strain in a tilted magnetic field
Tahir, M.
2012-12-06
Topological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.
Transport properties of photonic topological insulators based on microring resonator array
Jiang, Xiaohui; Yin, Chenxuan; Zhang, Yanfeng; Chen, Hui; Yu, Siyuan
2016-01-01
An array of ring resonators specifically designed can perform as a topological insulator. We conduct simulations using both Tight-Binding Model (TBM) and Transfer Matrix Method (TMM) to analyze the transport properties of such optical structure, verifying the presence of robust topological edge states which is immune to disorder and defect. We have also made a comparison between these two methods, of which results suggesting that TBM is only applicable under weakly-coupling condition while TMM is more rigorous. Finally we compared the structure with common microring array and coupled resonator optical waveguide (CROW) to demonstrate that it has desired transmission properties with wide and flat spectral response.
Shedding light onto topological insulator beads: perspectives for optical tweezing application
Muller, Yuri G; Fonseca, Jakson M
2016-01-01
The interaction of electromagnetic radiation with a spheric-type three-dimensional topological insulator (TI) bead is described within classical optics framework. By virtue of the topological magnetoelectric effect (TMEE) experienced by reflected and transmitted rays at the TI surface, there appears a net constant force on the spherical bead which is proportional to the fine structure constant times the incident radiation power. Such an uniform dynamics (constant acceleration) may be particularly useful for optical tweeezing techniques, for instance, to investigate a DNA strip or a membrane piece under stretching as well as to displace a tiny object by means of purely optical control.
Gap-dependent mass of a photon in a photonic topological insulator
Vieira, Marcelo; Sergeenkov, Sergei; Furtado, Claudio
2017-07-01
By using an analogy with axioniclike systems, we study light propagation in a periodic photonic topological insulator (PTI). The main result of this paper is an explicit expression for the PTI band structure. More specifically, it was found that for nonzero values of the topological phase difference γ =θ2-θ1 a finite gap δ ∝γ2 opens in the spectrum which is equivalent to the appearance of nonzero effective photon mass m*(δ ) ∝√{δ/}δ +2 .
Directory of Open Access Journals (Sweden)
Gyungse Park
2008-07-01
Full Text Available In the title compound, [Cd3(C16H10O43(C3H7NO2]n or [Cd3(SDA3(DMF2]n (H2SDA is trans-stilbene-4,4Ã¢Â€Â²-dicarboxylic acid and DMF is dimethylformamide, the linear dicarboxylate ligand forms a two-dimensionally layered metalÃ¢Â€Â“organic network with the relatively uncommon 36 topology. The structure reveals trinuclear secondary building units and has an octahedral geometry at a central metal ion (occupying a overline{3} symmetry site and tetrahedral geometries at two surrounding symmetrically equivalent metal ions lying on a threefold axis. The six-connected planar trinuclear CdII centers, Cd3(O2CR6, play a role as potential nodes in generation of the relatively uncommon 36 topology. The coordinated DMF unit is disordered around the threefold axis.
Monaco, Domenico; Tauber, Clément
2017-02-01
We establish a connection between two recently proposed approaches to the understanding of the geometric origin of the Fu-Kane-Mele invariant FKMin Z_2 , arising in the context of two-dimensional time-reversal symmetric topological insulators. On the one hand, the Z_2 invariant can be formulated in terms of the Berry connection and the Berry curvature of the Bloch bundle of occupied states over the Brillouin torus. On the other, using techniques from the theory of bundle gerbes, it is possible to provide an expression for FKM containing the square root of the Wess-Zumino amplitude for a certain U(N)-valued field over the Brillouin torus. We link the two formulas by showing directly the equality between the above-mentioned Wess-Zumino amplitude and the Berry phase, as well as between their square roots. An essential tool of independent interest is an equivariant version of the adjoint Polyakov-Wiegmann formula for fields T^2 → U(N) , of which we provide a proof employing only basic homotopy theory and circumventing the language of bundle gerbes.
Schreiber, K. A.; Samkharadze, N.; Gardner, G. C.; Biswas, Rudro R.; Manfra, M. J.; Csáthy, G. A.
2017-07-01
Under hydrostatic pressure, the ground state of a two-dimensional electron gas at ν =5 /2 changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase, we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two descriptions of the half-filled Landau level near the quantum critical point: one based on electrons and another on composite fermions.
Jian, Shao-Kai; Maciejko, Joseph; Yao, Hong
2016-01-01
We show that a supersymmetric gauge theory with dynamical gauge bosons and fermionic gauginos emerges naturally at the pair-density-wave (PDW) quantum phase transition on the surface of a correlated topological insulator (TI) hosting three Dirac cones, such as the candidate topological Kondo insulator SmB$_6$. At the tricritical point separating the first- and second-order quantum phase transitions between the surface Dirac semimetal and nematic PDW phases, three massless bosonic Cooper pair fields emerge as the superpartners of three massless surface Dirac fermions. The resulting low-energy effective theory is the supersymmetric XYZ model, which is dual by mirror symmetry to $\\mathcal{N}=2$ supersymmetric quantum electrodynamics (SQED) in 2+1 dimensions. Using supersymmetry, we calculate exactly certain critical exponents and the optical conductivity of the surface states at the tricritical point, which may be measured in future experiments.
Diovisalvi, Annunziata; Lakhtakia, Akhlesh; Fiumara, Vincenzo; Chiadini, Francesco
2017-09-01
A boundary-value problem was formulated to investigate the reflection and transmission of light by a device consisting of an orthorhombic dielectric material that sits atop a 1D grating and is coated with a 3D topological insulator. In view of the periodicity of the grating, the electromagnetic field phasors were represented in terms of Floquet harmonics and the analysis was conducted by using the rigorous coupled-wave approach. We found that the device can exhibit bilaterally asymmetric reflection and transmission in the mid-infrared wavelength regime, provided that the surface admittance of the topological insulator is sufficiently high. This bilateral asymmetry is exhibited in narrow regimes for both the free-space wavelength and the angle of incidence. Bilateral asymmetry is exhibited more significantly by the specular components than by the nonspecular components of the reflected and transmitted plane waves.
Dirac spin-orbit torques and charge pumping at the surface of topological insulators
Ndiaye, Papa B.
2017-07-07
We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.
Directory of Open Access Journals (Sweden)
Zhi-Min Liao
2012-06-01
Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.
Numerical simulations of heavy fermion systems. From He-3 bilayers to topological Kondo insulators
Energy Technology Data Exchange (ETDEWEB)
Werner, Jan
2015-03-27
In this thesis the results of model calculations based on an extended Periodic Anderson Model are presented. The three particle ring exchange, which is the dominant magnetic exchange process in layered He-3, is included in the model. In addition, the model incorporates the constraint of no double occupancy by taking the limit of large local Coulomb repulsion. By means of Cellular DMFT, the model is investigated for a range of values of the chemical potential μ and inverse temperature β=1/T. The method is a cluster extension to the Dynamical Mean-Field Theory (DMFT), and allows to systematically include non-local correlations beyond the DMFT. The auxiliary cluster model is solved by a hybridization expansion CTQMC cluster solver, which provides unbiased, numerically exact results for the Green's function and other observables of interest. As a first step, the onset of Fermi liquid coherence is studied. At low enough temperature, the self-energy is found to exhibit a linear dependence on Matsubara frequency. Meanwhile, the spin susceptibility crossed over from a Curie-Weiss law to a Pauli law. The heavy fermion state appears at a characteristic coherence scale T{sub coh}. While the density is rather high for small filling, for larger filling T{sub coh} is increasingly suppressed. This involves a decreasing quasiparticle residue Z∝T{sub coh} and an enhanced mass renormalization m{sup *}/m∝T{sub coh}{sup -1}. Extrapolation leads to a critical filling, where the coherence scale is expected to vanish at a quantum critical point. At the same time, the effective mass diverges. This corresponds to a breakdown of the Kondo effect, which is responsible for the formation of quasiparticles, due to a vanishing of the effective hybridization between the layers. Cellular DMFT simulations are conducted for small clusters of size N{sub c}=2 and 3. Furthermore a simple two-band model for two-dimensional topological Kondo insulators is devised, which is based on a single
Snelder, M; Golubov, A A; Asano, Y; Brinkman, A
2015-08-12
To guide experimental work on the search for Majorana zero-energy modes, we calculate the superconducting pairing symmetry of a three-dimensional topological insulator in combination with an s-wave superconductor. We show how the pairing symmetry changes across different topological regimes. We demonstrate that a dominant p-wave pairing relation is not sufficient to realise a Majorana zero-energy mode useful for quantum computation. Our main result is the relation between odd-frequency pairing and Majorana zero energy modes by using Green functions techniques in three-dimensional topological insulators in the so-called Majorana regime. We discuss thereafter how the pairing relations in the different regimes can be observed in the tunneling conductance of an s-wave proximised three-dimensional topological insulator. We discuss the necessity to incorporate a ferromagnetic insulator to localise the zero-energy bound state to the interface as a Majorana mode.
van der Poel, Erwin P; Ostilla-Mónico, Rodolfo; Verzicco, Roberto; Lohse, Detlef
2014-07-01
The effect of various velocity boundary condition is studied in two-dimensional Rayleigh-Bénard convection. Combinations of no-slip, stress-free, and periodic boundary conditions are used on both the sidewalls and the horizontal plates. For the studied Rayleigh numbers Ra between 10(8) and 10(11) the heat transport is lower for Γ=0.33 than for Γ=1 in case of no-slip sidewalls. This is, surprisingly, the opposite for stress-free sidewalls, where the heat transport increases for a lower aspect ratio. In wider cells the aspect-ratio dependence is observed to disappear for Ra ≥ 10(10). Two distinct flow types with very different dynamics can be seen, mostly dependent on the plate velocity boundary condition, namely roll-like flow and zonal flow, which have a substantial effect on the dynamics and heat transport in the system. The predominantly horizontal zonal flow suppresses heat flux and is observed for stress-free and asymmetric plates. Low aspect-ratio periodic sidewall simulations with a no-slip boundary condition on the plates also exhibit zonal flow. In all the other cases, the flow is roll like. In two-dimensional Rayleigh-Bénard convection, the velocity boundary conditions thus have large implications on both roll-like and zonal flow that have to be taken into consideration before the boundary conditions are imposed.
Anomalous Spin Response and Virtual-Carrier-Mediated Magnetism in a Topological Insulator
Kernreiter, T.; Governale, M.; Zülicke, U.; Hankiewicz, E. M.
2016-04-01
We present a comprehensive theoretical study of the static spin response in HgTe quantum wells, revealing distinctive behavior for the topologically nontrivial inverted structure. Most strikingly, the q =0 (long-wavelength) spin susceptibility of the undoped topological-insulator system is constant and equal to the value found for the gapless Dirac-like structure, whereas the same quantity shows the typical decrease with increasing band gap in the normal-insulator regime. We discuss ramifications for the ordering of localized magnetic moments present in the quantum well, both in the insulating and electron-doped situations. The spin response of edge states is also considered, and we extract effective Landé g factors for the bulk and edge electrons. The variety of counterintuitive spin-response properties revealed in our study arises from the system's versatility in accessing situations where the charge-carrier dynamics can be governed by ordinary Schrödinger-type physics; it mimics the behavior of chiral Dirac fermions or reflects the material's symmetry-protected topological order.
Half-filled Landau level, topological insulator surfaces, and three-dimensional quantum spin liquids
Wang, Chong; Senthil, T.
2016-02-01
We synthesize and partly review recent developments relating the physics of the half-filled Landau level in two dimensions to correlated surface states of topological insulators in three dimensions. The latter are in turn related to the physics of certain three-dimensional quantum spin liquid states. The resulting insights provide an interesting answer to the old question of how particle-hole symmetry is realized in composite fermion liquids. Specifically the metallic state at filling ν =1/2 —described originally in pioneering work by Halperin, Lee, and Read as a liquid of composite fermions—was proposed recently by Son to be described by a particle-hole symmetric effective field theory distinct from that in the prior literature. We show how the relation to topological insulator surface states leads to a physical understanding of the correctness of this proposal. We develop a simple picture of the particle-hole symmetric composite fermion through a modification of older pictures as electrically neutral "dipolar" particles. We revisit the phenomenology of composite fermi liquids (with or without particle-hole symmetry), and show that their heat/electrical transport dramatically violates the conventional Wiedemann-Franz law but satisfies a modified one. We also discuss the implications of these insights for finding physical realizations of correlated topological insulator surfaces.
Interpreting current-induced spin polarization in topological insulator surface states
Li, Pengke; Appelbaum, Ian
2016-06-01
Several recent experiments on three-dimensional topological insulators claim to observe a large charge current-induced nonequilibrium ensemble spin polarization of electrons in the helical surface state. We present a comprehensive criticism of such claims, using both theory and experiment: First, we clarify the interpretation of quantities extracted from these measurements by deriving standard expressions from a Boltzmann transport equation approach in the relaxation-time approximation at zero and finite temperature to emphasize our assertion that, despite high in-plane spin projection, obtainable current-induced ensemble spin polarization is minuscule. Second, we use a simple experiment to demonstrate that magnetic field-dependent open-circuit voltage hysteresis (identical to those attributed to current-induced spin polarization in topological insulator surface states) can be generated in analogous devices where current is driven through thin films of a topologically trivial metal. This result ipso facto discredits the naive interpretation of previous experiments with TIs, which were used to claim observation of helicity, i.e., spin-momentum locking in the topologically protected surface state.
Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure.
Bahramy, M S; Yang, B-J; Arita, R; Nagaosa, N
2012-02-14
The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example in which the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless surface or edge states. Another example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of the spin-orbit interaction under broken inversion symmetry. It is of particular importance to know how these two effects, that is, the non-trivial topology of electronic states and the Rashba spin splitting, interplay with each other. Here we show through sophisticated first-principles calculations that BiTeI, a giant bulk Rashba semiconductor, turns into a topological insulator under a reasonable pressure. This material is shown to exhibit several unique features, such as a highly pressure-tunable giant Rashba spin splitting, an unusual pressure-induced quantum phase transition, and more importantly, the formation of strikingly different Dirac surface states at opposite sides of the material.
Lai, Kueifu; Ma, Tsuhsuang; Bo, Xiao; Anlage, Steven; Shvets, Gennady
2016-06-27
Electromagnetic (EM) waves propagating through an inhomogeneous medium are generally scattered whenever the medium's electromagnetic properties change on the scale of a single wavelength. This fundamental phenomenon constrains how optical structures are designed and interfaced with each other. Recent theoretical work indicates that electromagnetic structures collectively known as photonic topological insulators (PTIs) can be employed to overcome this fundamental limitation, thereby paving the way for ultra-compact photonic structures that no longer have to be wavelength-scale smooth. Here we present the first experimental demonstration of a photonic delay line based on topologically protected surface electromagnetic waves (TPSWs) between two PTIs which are the EM counterparts of the quantum spin-Hall topological insulators in condensed matter. Unlike conventional guided EM waves that do not benefit from topological protection, TPSWs are shown to experience multi-wavelength reflection-free time delays when detoured around sharply-curved paths, thus offering a unique paradigm for compact and efficient wave buffers and other devices.
Lai, Kueifu; Ma, Tsuhsuang; Bo, Xiao; Anlage, Steven; Shvets, Gennady
2016-01-01
Electromagnetic (EM) waves propagating through an inhomogeneous medium are generally scattered whenever the medium’s electromagnetic properties change on the scale of a single wavelength. This fundamental phenomenon constrains how optical structures are designed and interfaced with each other. Recent theoretical work indicates that electromagnetic structures collectively known as photonic topological insulators (PTIs) can be employed to overcome this fundamental limitation, thereby paving the way for ultra-compact photonic structures that no longer have to be wavelength-scale smooth. Here we present the first experimental demonstration of a photonic delay line based on topologically protected surface electromagnetic waves (TPSWs) between two PTIs which are the EM counterparts of the quantum spin-Hall topological insulators in condensed matter. Unlike conventional guided EM waves that do not benefit from topological protection, TPSWs are shown to experience multi-wavelength reflection-free time delays when detoured around sharply-curved paths, thus offering a unique paradigm for compact and efficient wave buffers and other devices. PMID:27345575
Xiao, Bo; Yu, Yang; Ma, Tzuhsuan; Shvets, Gennady; Anlage, Steven M
2016-01-01
Photonic topological insulators are an interesting class of materials whose photonic band structure can have a bandgap in the bulk while supporting topologically protected unidirectional edge modes. Recent studies on bianisotropic metamaterials that emulate the electronic quantum spin Hall effect using its electromagnetic analog are examples of such systems with relatively simple and elegant design. In this paper, we present a novel rotating magnetic dipole antenna, composed of two perpendicularly oriented helical coils, that can efficiently excite the unidirectional topologically protected surface waves in the bianisotropic metawaveguide (BMW) structure recently realized by Ma, et al., despite the fact that the BMW does not break time-reversal invariance. In addition to achieving high directivity, the antenna can be tuned continuously to excite reflectionless edge modes to the two opposite directions with various amplitude ratios. We demonstrate its performance through experiment and compare to simulation re...
Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator
Wu, Liang; Salehi, M.; Koirala, N.; Moon, J.; Oh, S.; Armitage, N. P.
2016-12-01
Topological insulators have been proposed to be best characterized as bulk magnetoelectric materials that show response functions quantized in terms of fundamental physical constants. Here, we lower the chemical potential of three-dimensional (3D) Bi2Se3 films to ~30 meV above the Dirac point and probe their low-energy electrodynamic response in the presence of magnetic fields with high-precision time-domain terahertz polarimetry. For fields higher than 5 tesla, we observed quantized Faraday and Kerr rotations, whereas the dc transport is still semiclassical. A nontrivial Berry’s phase offset to these values gives evidence for axion electrodynamics and the topological magnetoelectric effect. The time structure used in these measurements allows a direct measure of the fine-structure constant based on a topological invariant of a solid-state system.
Lapa, Matthew F; Ye, Peng; Hughes, Taylor L
2016-01-01
We calculate the topological part of the electromagnetic response of Bosonic Integer Quantum Hall (BIQH) phases in odd (spacetime) dimensions, and Bosonic Topological Insulator (BTI) and Bosonic chiral semi-metal (BCSM) phases in even dimensions. To do this we use the Nonlinear Sigma Model (NLSM) description of bosonic symmetry-protected topological (SPT) phases, and the method of gauged Wess-Zumino (WZ) actions. We find the surprising result that for BIQH states in dimension $2m-1$ ($m=1,2,\\dots$), the bulk response to an electromagnetic field $A_{\\mu}$ is characterized by a Chern-Simons term for $A_{\\mu}$ with a level quantized in integer multiples of $m!$ (factorial). We also show that BTI states (which have an extra $\\mathbb{Z}_2$ symmetry) can exhibit a $\\mathbb{Z}_2$ breaking Quantum Hall effect on their boundaries, with this boundary Quantum Hall effect described by a Chern-Simons term at level $\\frac{m!}{2}$. We show that the factor of $m!$ can be understood by requiring gauge invariance of the expone...
Theoretical study of Kondo effect and related transport properties in topological insulator systems
Xin, Xianhao
This thesis presents theoretical studies of the Kondo effect and related transport properties in topological insulator systems. The thesis mainly covers two topics: the Kondo effect on the surface of a bulk topological insulator material and the Kondo effect in a topological insulator quantum dot. Other relevant background knowledge and theoretical techniques for the transport calculations are also discussed in the thesis. For the first topic, we investigate the role of magnetic impurities in the transport properties of a three-dimensional topological insulator's surface states. First, we combine the second-order perturbation theory and the Boltzmann transport equation to calculate the magnetically induced resistivity in a topological insulator. Our result shows a non-perturbative behavior when conduction electrons and magnetic impurities' spins are antiferromagnetically coupled. The surface resistivity is found to display an oscillatory rather than isotropic behavior compared to the conventional Kondo effect. Both the variational method and renormalization group (RG) analysis are employed to compute the Kondo temperature, through which the non-perturbative behavior is confirmed. We further study the RG flows and demonstrate that the RG trajectories eventually flow into a strong coupling regime if the coupling is antiferromagnetic. This work is motivated by the recent transport experiments, in which surface currents were detected in topological insulators. The calculation is shown to be qualitatively consistent with the low temperature dip observed in the experimental R - T curve, and it might be one of the possible origins of the dip. For the second main topic, we investigate theoretically the nonequilibrium transport properties of a topological insulator quantum dot (TIQD) in the Coulomb blockade and Kondo regime. An Anderson impurity model is applied to a TIQD system coupled to two external leads, and we show that the model realizes the spin-orbital Kondo effect
Gu, Yingfei; Wen, Xueda; Cho, Gil Young; Ryu, Shinsei; Qi, Xiao-Liang
2016-01-01
In this paper, we study $(2+1)$-dimensional quantum anomalous Hall states, i.e. band insulators with quantized Hall conductance, using the exact holographic mapping. The exact holographic mapping is an approach to holographic duality which maps the quantum anomalous Hall state to a different state living in $(3+1)$-dimensional hyperbolic space. By studying topological response properties and the entanglement spectrum, we demonstrate that the holographic dual theory of a quantum anomalous Hall state is a $(3+1)$-dimensional topological insulator. The dual description enables a new characterization of topological properties of a system by the quantum entanglement between degrees of freedom at different length scales.
van der Poel, Erwin P; Verzicco, Roberto; Lohse, Detlef
2015-01-01
The effect of various velocity boundary condition is studied in two-dimensional Rayleigh-B\\'enard convection. Combinations of no-slip, stress-free and periodic boundary conditions are used on both the sidewalls and the horizontal plates. For the studied Rayleigh numbers Ra between $10^8$ and $10^{11}$ the heat transport is lower for $\\Gamma = 0.33$ than for $\\Gamma = 1$ in case of no-slip sidewalls. This is surprisingly opposite for stress-free sidewalls, where the heat transport increases for lower aspect-ratio. In wider cells the aspect-ratio dependence is observed to disappear for $\\text{Ra} \\ge 10^{10}$. Two distinct flow types with very different dynamics can be seen, mostly dependent on the plate velocity boundary condition, namely roll-like flow and horizontal zonal flow, which have a substantial effect on the dynamics and heat transport in the system. The predominantly horizontal zonal flow suppresses heat flux and is observed for stress-free and asymmetric plates. Low aspect-ratio periodic sidewall s...
The preparation process and feature of the topological insulator Bi2Te3
Institute of Scientific and Technical Information of China (English)
Peng Chen; Dajin Zhou; Pingyuan Li; Yajing Cui; Yongliang Chen
2014-01-01
Topological insulators are insulating in the bulk but have metallic surface states. Its unique physicochemi-cal properties can find numerous applications in electron-ics, spintronics, photonics, the energy sciences, and the signal control of transportation. We report an experimental approach to synthesize the high-quality single crystal of topological insulator Bi2Te3 by using self-flux method. We obtained the optimal preparation conditions by adjusting the parameters of heat treatment, and successfully prepared the single-crystal Bi2Te3 sample. The as-grown samples have a surface with bright metallic luster and are soft and fragile. Furthermore, Bi2Te3 has the obvious layer structure from SEM results. The data of X-ray diffraction and scanning electron microscope show that Bi2Te3 single crystal grows along the c-axis with the order of Te(1)-Bi-Te(2)-Bi-Te(1) and crystallizes in the hexagonal system with space group of R/3 m. The q-T curve shows that q decreases with temperature, showing metallic behavior over the whole temperature range.
Guozhi, Jia; Peng, Wang; Yanbang, Zhang; Kai, Chang
2016-05-01
Localized surface plasmons (LSP), the confined collective excitations of electrons in noble metal and doped semiconductor nanostructures, enhance greatly local electric field near the surface of the nanostructures and result in strong optical response. LSPs of ordinary massive electrons have been investigated for a long time and were used as basic ingredient of plasmonics and metamaterials. LSPs of massless Dirac electrons, which could result in novel tunable plasmonic metamaterials in the terahertz and infrared frequency regime, are relatively unexplored. Here we report for first time the observation of LSPs in Bi2Se3 topological insulator hierarchical nanoflowers, which are consisted of a large number of Bi2Se3 nanocrystals. The existence of LSPs can be demonstrated by surface enhanced Raman scattering and absorbance spectra ranging from ultraviolet to near-infrared. LSPs produce an enhanced photothermal effect stimulated by near-infrared laser. The excellent photothermal conversion effect can be ascribed to the existence of topological surface states, and provides us a new way for practical application of topological insulators in nanoscale heat source and cancer therapy.
Lee, Ching Hua; Zhang, Xiao; Guan, Bochen
2015-12-01
Materials exhibiting negative differential resistance have important applications in technologies involving microwave generation, which range from motion sensing to radio astronomy. Despite their usefulness, there has been few physical mechanisms giving rise to materials with such properties, i.e. GaAs employed in the Gunn diode. In this work, we show that negative differential resistance also generically arise in Dirac ring systems, an example of which has been experimentally observed in the surface states of Topological Insulators. This novel realization of negative differential resistance is based on a completely different physical mechanism from that of the Gunn effect, relying on the characteristic non-monotonicity of the response curve that remains robust in the presence of nonzero temperature, chemical potential, mass gap and impurity scattering. As such, it opens up new possibilities for engineering applications, such as frequency upconversion devices which are highly sought for terahertz signal generation. Our results may be tested with thin films of Bi2Se3 Topological Insulators, and are expected to hold qualitatively even in the absence of a strictly linear Dirac dispersion, as will be the case in more generic samples of Bi2Se3 and other materials with topologically nontrivial Fermi sea regions.
Transport of Dirac fermions on the surface of strong topological insulator and graphene
Energy Technology Data Exchange (ETDEWEB)
Kundu, Arijit
2012-06-14
In this dissertation I study electronic transport through Dirac Fermions on the surface of strong topological insulator and graphene. I start by reviewing the physics of topological insulator and graphene and the low energy effective theory for the electronic states of the surface of a 3D strong topological insulator and graphene. Using this theory the electronic structure of the surface states of strong topological insulators of geometries with large surface to bulk ratio like nanowire and thin film are obtained. Then the energy spectrum and the spin-parity structure of the eigenstates for a finite size topological insulator quantum dot of the shape of a nanotube are considered. Numerical calculations show that even at the lowest energy scales, the ''spin-surface locking'' is broken, that is, the spin direction in a topologically protected surface mode is not locked to the surface. The calculations also show the existence of ''zero-momentum'' modes, and sub-gap states localized near the ''caps'' of the dot. Both the energy spectrum and the spin texture of the eigenstates are basically reproduced from an analytical surface Dirac fermion description. The results are compared to microscopic calculations using a tight-binding model for a strong topological insulator in a finite-length nanowire geometry, which shows qualitative similarity. Then, a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator is presented. Phonons are modeled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction with the helical surface Dirac fermions is mediated by the deformation potential. The temperature-dependent electrical resistivity ρ(T) and the quasi-particle decay rate Γ(T) observable in photo-emission are computed numerically. The low and high-temperature power laws for both quantities are obtained analytically. Detailed
Lu, Hai-Zhou; Shen, Shun-Qing
2016-11-01
Weak localization and antilocalization are quantum transport phenomena that arise from the quantum interference in disordered metals. At low temperatures, they can give distinct temperature and magnetic field dependences in conductivity, allowing the symmetry of the system to be explored. In the past few years, they have also been observed in newly emergent topological materials, including topological insulators and topological semimetals. In contrast from the conventional electrons, in these new materials the quasiparticles are described as Dirac or Weyl fermions. In this article, we review our recent efforts on the theories of weak antilocalization and interaction-induced localization for Dirac and Weyl fermions in topological insulators and topological semimetals. Project supported by the National Key R & D Program, China (Grant No. 2016YFA0301700), the Research Grant Council, University Grants Committee, Hong Kong, China (Grant No. 17303714), the National Natural Science Foundation of China (Grant No. 11574127), and the National Thousand-Young-Talents Program of China.
Kawamura, Minoru; Yoshimi, Ryutaro; Tsukazaki, Atsushi; Takahashi, Kei S.; Kawasaki, Masashi; Tokura, Yoshinori
2017-07-01
The instability of the quantum anomalous Hall (QAH) effect has been studied as a function of the electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that the Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 μ m . The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.
Institute of Scientific and Technical Information of China (English)
Liu Yi-Man; Shao Huai-Hua; Zhou Xiao-Ying; Zhou Guang-Hui
2013-01-01
We study the electronic structure and spin polarization of the surface states of a three-dimensional topological insulator thin film modulated by an electrical potential well.By routinely solving the low-energy surface Dirac equation for the system,we demonstrate that confined surface states exist,in which the electron density is almost localized inside the well and exponentially decayed outside in real space,and that their subband dispersions are quasilinear with respect to the propagating wavevector.Interestingly,the top and bottom surface confined states with the same density distribution have opposite spin polarizations due to the hybridization between the two surfaces.Along with the mathematical analysis,we provide an intuitive,topological understanding of the effect.
Ultrafast spin-polarization control of Dirac fermions in topological insulators
Sánchez-Barriga, J.; Golias, E.; Varykhalov, A.; Braun, J.; Yashina, L. V.; Schumann, R.; Minár, J.; Ebert, H.; Kornilov, O.; Rader, O.
2016-04-01
Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states (TSSs) using femtosecond light pulses opens novel perspectives for the generation and manipulation of dissipationless surface spin currents on ultrafast time scales. Using time-, spin-, and angle-resolved spectroscopy, we directly monitor the ultrafast response of the spin polarization of photoexcited TSSs to circularly polarized femtosecond pulses of infrared light. We achieve all-optical switching of the transient out-of-plane spin polarization, which relaxes in about 1.2 ps. Our observations establish the feasibility of ultrafast optical control of spin-polarized Dirac fermions in TIs and pave the way for optospintronic applications at ultimate speeds.
Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire
Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya
2016-02-01
Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.
Topological insulators and the QCD vacuum: the theta parameter as a Berry phase
Thacker, H B
2013-01-01
There is considerable evidence, based on large $N_c$ chiral dynamics, holographic QCD, and Monte Carlo studies, that the QCD vacuum is permeated by discrete quasivacua separated by domain walls across which the local value of the topological $\\theta$ parameter jumps by $\\pm2\\pi$. In the 2-dimensional $CP^{N-1}$ sigma model, a pointlike charge is a domain wall, and $\\theta$ describes the background electric flux and the polarization of charged pairs in the vacuum. We show that the screening process, and the role of $\\theta$ as an order parameter describing electric polarization, are naturally formulated in terms of Bloch wave eigenstates of the Dirac Hamiltonian in the background gauge field. This formulation is similar to the Berry phase description of electric polarization and quantized charge transport in topological insulators. The Bloch waves are quasiperiodic superpositions of localized Dirac zero modes. They define a Berry connection around the Brillouin zone of the zero mode band which describes the lo...
Magnetic proximity effect as a pathway to spintronic applications of topological insulators.
Vobornik, Ivana; Manju, Unnikrishnan; Fujii, Jun; Borgatti, Francesco; Torelli, Piero; Krizmancic, Damjan; Hor, Yew San; Cava, Robert J; Panaccione, Giancarlo
2011-10-12
Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.
Surface states in a 3D topological insulator: The role of hexagonal warping and curvature
Energy Technology Data Exchange (ETDEWEB)
Repin, E. V.; Burmistrov, I. S., E-mail: burmi@itp.ac.ru [Moscow Institute of Physics and Technology (Russian Federation)
2015-09-15
We explore a combined effect of hexagonal warping and a finite effective mass on both the tunneling density of electronic surface states and the structure of Landau levels of 3D topological insulators. We find the increasing warping to transform the square-root van Hove singularity into a logarithmic one. For moderate warping, an additional logarithmic singularity and a jump in the tunneling density of surface states appear. By combining the perturbation theory and the WKB approximation, we calculate the Landau levels in the presence of hexagonal warping. We predict that due to the degeneracy removal, the evolution of Landau levels in the magnetic field is drastically modified.
Ma, Ning; Zhang, Shengli; Liu, Daqing
2016-10-01
Recent experiments reveal that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). We further explore the strain effects on magnetotransport in HgTe at magnetic field. We find that the substrate strain associated with the surface index of carriers, can remove the surfaces degeneracy in Landau levels. This accordingly induces the well separated surface quantum Hall plateaus and Shubnikov-de Haas oscillations. These results can be used to generate and detect surface polarization, not only in HgTe but also in a broad class of TIs, which would be very great news for electronic applications of TIs.
The $Z_2$ Index of Disordered Topological Insulators with Time Reversal Symmetry
Katsura, Hosho
2015-01-01
We study disordered topological insulators with time reversal symmetry. Relying on the noncommutative index theorem which relates the Chern number to the projection onto the Fermi sea and the magnetic flux operator, we give a precise definition of the $Z_2$ index which is a noncommutative analogue of the Atiyah-Singer $Z_2$ index. We prove that the noncommutative $Z_2$ index is robust against any time-reversal symmetric perturbation including disorder potentials as long as the spectral gap at the Fermi level does not close.
Liu, Zheng-Qin; Wang, Rui-Qiang; Deng, Ming-Xun; Hu, Liang-Bin
2015-06-01
We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topological insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted: observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electrically controlled magnetization switching. Supported by National Natural Science Foundation of China under Grant Nos. 11174088, 11175067, 11274124