WorldWideScience

Sample records for turn-on field voltage

  1. Comparison between voltage by turn measured on different tokamaks operating in hybrid wave current drive regime

    International Nuclear Information System (INIS)

    Briffod, G.; Hoang, G.T.

    1987-06-01

    On a tokamak in a current drive operation with a hybrid wave, the R.F. current is estimated from the voltage drop by plasma turn generated by R.F. power application. This estimated current is not proportional to the injected power. There still exists in the plasma an electric field corresponding to the current part produced by induction. The role evaluation of this parameter on the current drive efficiency is important. In this report the relation voltage-R.F. current is studied on Petula and results on the voltage evolution by turn on different machines are compared [fr

  2. Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

    Science.gov (United States)

    Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo

    2018-05-01

    An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.

  3. Novel T-Z source inverter with high voltage gain and reduced transformer turn ratio

    DEFF Research Database (Denmark)

    Mostaan, Ali; Sharifi Malfejani, Saeed; Soltani, Mohsen

    2015-01-01

    Novel voltage source inverter based on the Z source inverter structure is introduced in this paper. In this new inverter, two inductors of the impedance network in conventional Z source inverter are replaced with two transformers or coupled inductors, but unlike the T-Z source inverter that it......'s voltage gain is raised with increasing the transformers turn ratio, the voltage gain in the proposed inverter is raised with lowering the transformer turn ratio. Therefore, transformers with lower turn ratio are required in the proposed inverter in compare with T- Z source inverter that can lead to lower...

  4. Fast turn-off of high voltage 4H–SiC npn BJTs from the saturation on-state regime

    International Nuclear Information System (INIS)

    Ivanov, P A; Levinshtein, M E; Palmour, J W; Agarwal, A K; Zhang, J

    2010-01-01

    Fast turn-off of high-voltage (breakdown voltage ≥ 3 kV) 4H–SiC npn bipolar junction transistors driven in a deeply saturated regime has been reported. In the conventional turn-off mode (base current break), the turn-off delay and current fall times are 80 ns and 100 ns, respectively. It is shown that these times can be made as short as 20 and 4 ns, respectively, if a reverse base current pulse of appropriate amplitude is applied to sweep out minority carriers from the base. The experimental values of delay and turn-off times well coincide with those calculated in terms of the charge control model

  5. ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra

    International Nuclear Information System (INIS)

    Jha, S.K.; Kutsay, O.; Bello, I.; Lee, S.T.

    2013-01-01

    Light emitting diodes (LEDs) based on arrays of n-type ZnO Nanorods were fabricated on p-GaN films using a hydrothermal method. The LEDs emit mainly in blue and UV range of the light. Their current–Voltage (I–V) characteristics typically show a low leakage current (7.2 μA) and a high rectification ratio (3 5 5). Devices operate at a low turn-on voltage of ∼4.5 V. Photoluminescence (PL) and electroluminescence (EL) measurements suggest low density of ZnO defects; however, in some aspects density of interfacial defects still might be considerable in the studied devices. The PL emission is deconvoluted to three peaks that are located at wavelengths of 361, 381, and 397 nm, while the wide EL spectra are deconvoluted to five peaks appearing at 368, 385, 427, 474, and 515 nm. Near-band-edge (NBE) emission of p-GaN and n-ZnO was observed in both the PL and EL spectra. Deconvoluted EL spectra consist of a very wide green band with the peak at 515 nm and extending up to 650 nm (red), and a rarely reported EL emission at 474 nm. Origin of these emissions is discussed, herein. The electrical characteristics together with EL characteristics indicate potential to develop and study p-GaN/n-ZnO nanorod LEDs for white emitting applications. - Highlights: ► A low turn-on voltage (4–4.5 V) and low threshold (5 V) electroluminescence from ZnO/GaN heterostructure. ► A wide spectrum EL emission (360–700 nm) suitable for white LED application. ► EL spectra consist of a rarely reported emission band with peak at 474 nm. ► Low-temperature and solution based fabrication, which is scalable and of low cost.

  6. Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

    2017-01-01

    Junction temperature is of great importance to safe operating area of IGBT modules. Various information of the IGBT operating state is reflected on electrical characteristics during turn-on transient. A unified extraction method for internal junction temperature via dynamic thermo......-sensitive electrical parameters (DTSEP) during turn-on transient is proposed. Two DTSEP, turn-on delay time (tdon) and the maximum increasing rate of collector current dic/dt(max), are combined to eliminate the bus voltage impact. Using the inherent emitter-auxiliary inductor LeE in high-power modules, the temperature......-dependent DTSEPs can be converted into a low-voltage and measurable signal. Finally, experiment results are exhibited to verify the effectiveness of proposed method....

  7. Formation of field reversed configurations in a slow, multi-turn coil system: Appendix B

    International Nuclear Information System (INIS)

    Slough, J.T.; Hoffman, A.L.

    1987-01-01

    A previous field-reversed theta pinch, TRX-1, has been modified by replacing the single turn main compression coil with an array of three-turn coils. Field reversed configurations (FRCs) have been formed at relatively low values of azimuthal electric field, where ohmic dissipation and axial compressive heating are substituted for the radial shock heating which is dominant in high voltage theta pinches. The longer magnetic field risetime has allowed various controls to be applied to the formation timing, so that the axial implosion can be made to coincide with the peak of the applied magnetic field. This 'programmed formation' control results in maximum plasma heating, and minimizes the formation dynamics

  8. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    International Nuclear Information System (INIS)

    Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

    2016-01-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  9. Mathematical model of voltage-current characteristics of Bi(2223)/Ag magnets under an external magnetic field

    CERN Document Server

    Pitel, J; Lehtonen, J; Kovács, P

    2002-01-01

    We have developed a mathematical model, which enables us to predict the voltage-current V(I) characteristics of a solenoidal high-temperature superconductor (HTS) magnet subjected to an external magnetic field parallel to the magnet axis. The model takes into account the anisotropy in the critical current-magnetic field (I sub c (B)) characteristic and the n-value of Bi(2223)Ag multifilamentary tape at 20 K. From the power law between the electric field and the ratio of the operating and critical currents, the voltage on the magnet terminals is calculated by integrating the contributions of individual turns. The critical current of each turn, at given values of operating current and external magnetic field, is obtained by simple linear interpolation between the two suitable points of the I sub c (B) characteristic, which corresponds to the angle alpha between the vector of the resulting magnetic flux density and the broad tape face. In fact, the model is valid for any value and orientation of external magneti...

  10. Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

    International Nuclear Information System (INIS)

    Frick, G.; Osswald, F.; Heusch, B.

    1996-01-01

    Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

  11. Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

    International Nuclear Information System (INIS)

    Shiota, Yoichi; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

    2016-01-01

    We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θ_H=80°, ϕ_H=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state. - Highlights: • Examined voltage-induced ferromagnetic resonance (FMR) under various field angles. • FMR dynamics are excited by voltage-induced magnetic anisotropy changes. • Microwave detection sensitivity depends on input RF and elevation angle. • Microwave detection sensitivity=350 mV/mW at RF=1.0 GHz, θ_H=80°, ϕ_H=0°.

  12. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  13. Effect of transmitter turn-off time on transient soundings

    Science.gov (United States)

    Fitterman, D.V.; Anderson, W.L.

    1987-01-01

    A general procedure for computing the effect of non-zero turn-off time on the transient electromagnetic response is presented which can be applied to forward and inverse calculation methods for any transmitter-receiver configuration. We consider in detail the case of a large transmitter loop which has a receiver coil located at the center of the loop (central induction or in-loop array). For a linear turn-off ramp of width t0, the voltage response is shown to be the voltage due to an ideal step turn-off averaged over windows of width t0. Thus the effect is similar to that obtained by using averaging windows in the receiver. In general when time zero is taken to be the end of the ramp, the apparent resistivity increases for a homogeneous half-space over a limited time range. For time zero taken to be the start of the ramp the apparent resistivity is affected in the opposite direction. The effect of the ramp increases with increasing t0 and first-layer resistivity, is largest during the intermediate stage, and decreases with increasing time. It is shown that for a ramp turn-off, there is no effect in the early and late stages. For two-layered models with a resistive first layer (??1>??2), the apparent resistivity is increased in the intermediate stage. When the first layer is more conductive than the second layer (??1interpretation as shown by field examples; the influence is the greatest on near-surface layer parameters. ?? 1987.

  14. Effects of a low-voltage static electric field on energy metabolism in astrocytes.

    Science.gov (United States)

    Huang, R; Peng, L; Hertz, L

    1997-01-01

    Mouse astrocytes (glial cells) in primary cultures were exposed to a low-voltage static DC electric field with no current flow and thus with no generation of magnetic fields. The electric field altered the rate of glycolysis, measured by 2-deoxyglucose accumulation. The magnitude and direction of this effect depended on the polarization of the field and the applied voltage. The maximum effect was an increase of approximately 30%, which occurred with field across the cells at an intensity that can be calculated to be 0.3 mV/cm or less. Reversal of the polarization converted the stimulation to a small but statistically significant inhibition.

  15. Response of dairy cattle to transient voltages and magnetic fields

    International Nuclear Information System (INIS)

    Reinemann, D.J.; Laughlin, N.K.; Stetson, L.E.

    1995-01-01

    Stray voltages in dairy facilities have been studied since the 1970's. Previous research using steady-state ac and dc voltages has defined cow-contact voltage levels which may cause behavior and associated production problems. This research was designed to address concerns over possible effects of transient voltages and magnetic fields on dairy cows. Dairy cows response to transient voltages and magnetic fields was measured. The waveforms of the transient voltages applied were: 5 cycles of 60-Hz ac with a total pulse time of 83 ms, 1 cycle of 60-Hz ac with a total pulse time of 16 ms, and 1 cycle of an ac square wave (spiking positive and negative) of 2-ms duration. Alternating magnetic fields were produced by passing 60-Hz ac fundamental frequency with 2nd and 3rd harmonic and random noise components in metal structures around the cows. The maximum magnetic field associated with this current flow was in excess of 4 G. A wide range of sensitivity to transient voltages was observed among cows. Response levels from 24 cows to each transient exposure were normally distributed. No responses to magnetic fields were observed

  16. The effect of high voltage pulsed electric field on water molecular

    Science.gov (United States)

    Fan, Xuejie; Bai, Yaxiang; Ren, Ziying

    2017-10-01

    In order to study the mechanism of high voltage pulsed electric field pre-treatment on the food drying technology. In this paper, water was treated with high pulse electric field (HPEF) in different frequency, and different voltage, then, the viscosity coefficient and the surface tension coefficient of the water were measured. The results showed that indicated that the viscosity coefficient and the surface tension coefficient of the treated water can be decreased, and while HPEF pre-treatment was applied for 22.5kV at a frequency of 50Hz and 70 Hz, the surface tension and the viscosity coefficient of the pre-treatment treatment were reduced 13.1% and 7.5%, respectively.

  17. The Sterilization Effect of Cooperative Treatment of High Voltage Electrostatic Field and Variable Frequency Pulsed Electromagnetic Field on Heterotrophic Bacteria in Circulating Cooling Water

    Science.gov (United States)

    Gao, Xuetong; Liu, Zhian; Zhao, Judong

    2018-01-01

    Compared to other treatment of industrial circulating cooling water in the field of industrial water treatment, high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization technology, an advanced technology, is widely used because of its special characteristics--low energy consumption, nonpoisonous and environmentally friendly. In order to get a better cooling water sterilization effect under the premise of not polluting the environment, some experiments about sterilization of heterotrophic bacteria in industrial circulating cooling water by cooperative treatment of high voltage electrostatic field and variable frequency pulsed electromagnetic field were carried out. The comparison experiment on the sterilization effect of high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization on heterotrophic bacteria in industrial circulating cooling water was carried out by change electric field strength and pulse frequency. The results show that the bactericidal rate is selective to the frequency and output voltage, and the heterotrophic bacterium can only kill under the condition of sweep frequency range and output voltage. When the voltage of the high voltage power supply is 4000V, the pulse frequency is 1000Hz and the water temperature is 30°C, the sterilization rate is 48.7%, the sterilization rate is over 90%. Results of this study have important guiding significance for future application of magnetic field sterilization.

  18. Effect of high-voltage pulsed electric field (HPEF pretreatment on biogas production rates of hybrid Pennisetum by anaerobic fermentation

    Directory of Open Access Journals (Sweden)

    Baijuan Wang

    2018-02-01

    Full Text Available In this paper, the raw materials of hybrid Pennisetum were pretreated in different conditions of high voltage pulsed electric field (HPEF to improve its material utilization ratios and biogas production rates of anaerobic fermentation. Then, anaerobic digestion experiments were conducted within 32 days at moderate temperature (35 °C with TS mass fraction (6%, inoculation rate (20% and initial pH (7.0. It is indicated that compared with the control group, 9 groups of hybrid Pennisetum pretreated by HPEF are obviously superior in gas production efficiency of anaerobic fermentation, and higher in cumulative gas production, peak daily gas production and maximum methane concentration; that the most remarkable stimulation occurs in the HPEF condition of 15 kV/120 Hz/60 min, in that situation, the cumulative gas production in the fermentation period of 32 days is up to 9587 mL, 26.95% higher than that of the control group, the peak daily gas production increases and the range of peak period extends. It is demonstrated that the optimal HPEF pretreatment time is 60 min and three HPEF parameters have a better effect on gas production in the order of voltage > time > frequency; and that the effect degree of treatment parameters on peak daily gas production is voltage, frequency and time in turn. It is concluded that HPEF can improve material utilization ratio and gas production rate of hybrid Pennisetum by anaerobic fermentation and shorten the gas production cycle. By virtue of this physical pretreatment method, the resource of Pennisetum is utilized sufficiently and the classes of energy plants are enlarged effectively. Keywords: Hybrid Pennisetum, Anaerobic fermentation, High voltage pulsed electric field (HPEF, Biogas, Material utilization ratio, Gas generation rate, Model, Stimulation

  19. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  20. A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

    Science.gov (United States)

    Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

    2017-08-01

    A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

  1. Induced Voltage in an Open Wire

    Science.gov (United States)

    Morawetz, K.; Gilbert, M.; Trupp, A.

    2017-07-01

    A puzzle arising from Faraday's law has been considered and solved concerning the question which voltage will be induced in an open wire with a time-varying homogeneous magnetic field. In contrast to closed wires where the voltage is determined by the time variance of the magnetic field and the enclosed area, in an open wire we have to integrate the electric field along the wire. It is found that the longitudinal electric field with respect to the wave vector contributes with 1/3 and the transverse field with 2/3 to the induced voltage. In order to find the electric fields the sources of the magnetic fields are necessary to know. The representation of a spatially homogeneous and time-varying magnetic field implies unavoidably a certain symmetry point or symmetry line which depend on the geometry of the source. As a consequence the induced voltage of an open wire is found to be the area covered with respect to this symmetry line or point perpendicular to the magnetic field. This in turn allows to find the symmetry points of a magnetic field source by measuring the voltage of an open wire placed with different angles in the magnetic field. We present exactly solvable models of the Maxwell equations for a symmetry point and for a symmetry line, respectively. The results are applicable to open circuit problems like corrosion and for astrophysical applications.

  2. High voltage series protection of neutral injectors with crossed-field tubes

    International Nuclear Information System (INIS)

    Hofmann, G.A.; Thomas, D.G.

    1976-01-01

    High voltage neutral beam injectors for fusion machines require either parallel or series protection schemes to limit fault currents in case of arcing to safe levels. The protection device is usually located between the high voltage supply and beam injector and either crowbars (parallel protection) or disconnects (series protection) the high voltage supply when a fault occurs. Because of its isolating property, series protection is preferred. The Hughes crossed-field tube is uniquely suited for series protection schemes. The tube can conduct 40 A continuously upon application of voltage (approximately 300 V) and a static magnetic field (approximately 100 G). It is also capable of interrupting currents of 1000 A within 10 μs and withstand voltage of more than 120 kV. Experiments were performed to simulate the duty of a crossed-field tube as a series protection element in a neutral injector circuit under fault conditions. Results of on-switching tests under high and low voltage and interruption of fault currents are presented. An example of a possible protection circuit with crossed-field tubes is discussed

  3. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  4. Voltage distribution in tapered winding of tesla-transformer during discharge process of PFL

    International Nuclear Information System (INIS)

    Xin Jiaqi; Chang Anbi; Li Mingjia; Kang Qiang

    2007-01-01

    The operation principle of integral construction of Tesla transformer and PFL was investigated in Tesla-transformer-type accelerator. Experiment was carried out on Tesla transformer's secondary winding to study the impulse voltage distribution while PFL was discharging. The regularities of turn-ground voltage distribution and interturn voltage distribution were summarized. Voltage distribution within PFL was calculated and it was compared with the experimental result. Structural winding of parallel coils in the head, parallel coils in the end and shading ring were used to improve voltage distribution and that was testified by experiment. The results indicate that taper winding doesn't effect electric field within PFL, the turn-ground voltage appears linearly, the interturn voltage fluctuates seriously and it is the biggest in head of winding. The three optimized methods help to depress oscillation, the structural winding of parallel coils in the head decreases the interturn voltage in head of winding remark-ably and the parallel coils in the end decrease the interturn voltage in the end. (authors)

  5. Study of electric field distorted by space charges under positive lightning impulse voltage

    Science.gov (United States)

    Wang, Zezhong; Geng, Yinan

    2018-03-01

    Actually, many insulation problems are related to electric fields. And measuring electric fields is an important research topic of high-voltage engineering. In particular, the electric field distortion caused by space charge is the basis of streamer theory, and thus quantitatively measuring the Poisson electric field caused by space charge is significant to researching the mechanism of air gap discharge. In this paper, we used our photoelectric integrated sensor to measure the electric field distribution in a 1-m rod-plane gap under positive lightning impulse voltage. To verify the reliability of this quantitative measurement, we compared the measured results with calculated results from a numerical simulation. The electric-field time domain waveforms on the axis of the 1-m rod-plane out of the space charge zone were measured with various electrodes. The Poisson electric fields generated by space charge were separated from the Laplace electric field generated by applied voltages, and the amplitudes and variations were measured for various applied voltages and at various locations. This work also supplies the feasible basis for directly measuring strong electric field under high voltage.

  6. Investigation of Vacuum Arc Voltage Characteristics Under Different Axial Magnetic Field Profiles

    International Nuclear Information System (INIS)

    Jia Shenli; Song Xiaochuan; Huo Xintao; Shi Zongqian; Wang Lijun

    2010-01-01

    Characteristics of the arc voltage under different profiles of axial magnetic field were investigated experimentally in a detachable vacuum chamber with five pairs of specially designed electrodes generating both bell-shaped and saddle-shaped magnetic field profile. The arc column and cathode spot images were photographed by a high speed digital camera. The dependence of the arc voltage on arcing evolution is analyzed. It is indicated that the axial magnetic field profile could affect the arc behaviors significantly, and the arc voltage is closely related to the arc light intensity.

  7. Effect of electric and magnetic fields on current-voltage characteristics of a lyotropic liquid crystal

    International Nuclear Information System (INIS)

    Minasyants, M.Kh.; Badalyan, G. G.; Shahinian, A. A.

    1997-01-01

    The effect of electric and magnetic fields on current-voltage characteristics is studied for the lamellar phase in the lyotropic liquid-crystal sodium pentadecylsulfonate (SPDS)-water and lecithin-water systems. It has been found that the current-voltage characteristics of both systems have hysteresis. In the case of ionogenic SPDS, the hysteresis is formed due to ion current caused by the spatial reorientation of domains consisting of parallel lamellar fragments; in the case of lecithin, whose molecules contain dipoles, the hysteresis is formed due to the spatial reorientation of domains caused by the interaction of the resultant dipole moment of the domains with the electric field. It is shown that the introduction into lamellae of cetylpyridine bromide, which has an intrinsic magnetic moment, changes the resultant magnetic moment of domains and, thus, also the hysteresis loop of the current-voltage characteristic. The systems studied show the 'memory' effect with respect to both the electric and magnetic fields. Field-induced processes of domain reorientation were recorded by the method of small-angle x-ray scattering

  8. Application of high voltage electric field (HVEF) drying technology in potato chips

    International Nuclear Information System (INIS)

    Bai, Yaxiang; Shi, Hua; Yang, Yaxin

    2013-01-01

    In order to improve the drying efficiency and qualities of vegetable by high voltage electric field (HVEF), potato chips as a representative of vegetable was dried using a high voltage electric drying systems at 20°C. The shrinkage rate, water absorption and rehydration ratio of dried potato chips were measured. The results indicated that the drying rate of potato chips was significantly improved in the high voltage electric drying systems. The shrinkage rate of potato chips dried by high voltage electric field was 1.1% lower than that by oven drying method. And the rehydration rate of high voltage electric field was 24.6% higher than that by oven drying method. High voltage electric field drying is very advantageous and can be used as a substitute for traditional drying method.

  9. Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

    Science.gov (United States)

    Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

    2016-10-03

    Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

  10. The Formation of Exciplex and Improved Turn-on Voltage in a Hybrid Organic-Inorganic Light-Emitting Diode

    International Nuclear Information System (INIS)

    Zhang Yan-Fei; Zhao Su-Ling; Xu Zheng; Kong Chao

    2012-01-01

    In order to take advantage of organic and inorganic materials, we chose the polymer MEH-PPV as the luminous layer and ZnS as the electron transporting layer to prepare hybrid organic-inorganic light-emitting diodes (HOILEDs): ITO/MEH-PPV(∼70 nm)/ZnS(20 nm)/Al by thermal evaporation and spin coating. Compared with the single-layer device ITO/MEH-PPV(∼70 nm)/Al, spectral broadening and a slightly red shift are observed. Compared with the pure organic device ITO/MEH-PPV(∼70 nm)/BCP (20 nm)/Al and combined with the energy level structure diagram, it is concluded that the spectral broadening and red shift are due to the exciplex luminescence at the interface between MEH-PPV and ZnS or BCP. In addition, the hybrid inorganic-organic device shows a lower turn-on voltage, but the current efficiency is lower than that of the pure organic device with the same structure

  11. Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2008-01-01

    The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed

  12. Measurement of the Magnetic Fields from High-Voltage (230 kV Substations in Tehran and Assessment of Their Effects

    Directory of Open Access Journals (Sweden)

    Mahdieh Sharifi Fard

    2010-06-01

    Full Text Available Introduction: Recent industrial developments in human societies have caused rapid advancements in technologies of production and distribution of electricity, which in turn result in enhancement of power networks and utilization of high voltages. These networks and the high voltages in transfer lines cause the exposure to electric and magnetic fields. In this study, the situation regarding the magnetic fields from high-voltage (230 kV substations in Tehran was investigated. Material and Methods: In this study, 8 high-voltage (230 kV substations were selected (Shous, Shahid Firouzi, Ozgol, Kan, Tehranpars, Azadegan, Ghorkhane and Besat substations. The premises of each substation was divided into some stations and measurements were done in each one. Measurements were done according to the IEEE std 644-1994 Standard in a way that the device, specifically its probe, was kept at a height of 1 meter above the ground surface. Then, we tried to examine the probable effects of exposure to magnetic fields through the Essex questionnaire, with Cronbach coefficient of 94%, completed by the employees of the substations. These questionnaires were completed by substation operators as an exposed group (36 persons and the employees of the office section of the Tehran regional electric company as a witness group (32 persons. Results: The measured density in none of the stations exceeded the standard limits of the International Commission on Non-Ionizing Radiation Protection. With regard to the questionnaire results about mental and neurological, cardiac and respiratory, and gastrointestinal and auditory disorders, we observed significant differences between witness and exposed groups, however, regarding skin allergies, there was no significant difference. Conclusion: Among all control rooms, the highest measured magnetic field was 6.9 mG in the Ozgol Substation Control Room and the lowest was 2 mG in the post of Shahid Firouzi. The control room of Ozgol

  13. Detection of inter-turn short-circuit at start-up of induction machine based on torque analysis

    Directory of Open Access Journals (Sweden)

    Pietrowski Wojciech

    2017-12-01

    Full Text Available Recently, interest in new diagnostics methods in a field of induction machines was observed. Research presented in the paper shows the diagnostics of induction machine based on torque pulsation, under inter-turn short-circuit, during start-up of a machine. In the paper three numerical techniques were used: finite element analysis, signal analysis and artificial neural networks (ANN. The elaborated numerical model of faulty machine consists of field, circuit and motion equations. Voltage excited supply allowed to determine the torque waveform during start-up. The inter-turn short-circuit was treated as a galvanic connection between two points of the stator winding. The waveforms were calculated for different amounts of shorted-turns from 0 to 55. Due to the non-stationary waveforms a wavelet packet decomposition was used to perform an analysis of the torque. The obtained results of analysis were used as input vector for ANN. The response of the neural network was the number of shorted-turns in the stator winding. Special attention was paid to compare response of general regression neural network (GRNN and multi-layer perceptron neural network (MLP. Based on the results of the research, the efficiency of the developed algorithm can be inferred.

  14. Review of the Dynamics of Coalescence and Demulsification by High-Voltage Pulsed Electric Fields

    Directory of Open Access Journals (Sweden)

    Ye Peng

    2016-01-01

    Full Text Available The coalescence of droplets in oil can be implemented rapidly by high-voltage pulse electric field, which is an effective demulsification dehydration technological method. At present, it is widely believed that the main reason of pulse electric field promoting droplets coalescence is the dipole coalescence and oscillation coalescence in pulse electric field, and the optimal coalescence pulse electric field parameters exist. Around the above content, the dynamics of high-voltage pulse electric field promoting the coalescence of emulsified droplets is studied by researchers domestically and abroad. By review, the progress of high-voltage pulse electric field demulsification technology can get a better understanding, which has an effect of throwing a sprat to catch a whale on promoting the industrial application.

  15. Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-10-15

    The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V{sub AH}) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V{sub AH} on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V{sub AH} depends on the doping density. The results are discussed.

  16. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

    Science.gov (United States)

    Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

    2018-03-01

    We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

  18. Voltage breakdown on niobium and copper surfaces

    International Nuclear Information System (INIS)

    Werner, G.R.; Padamsee, H.; Betzwieser, J.C.; Liu, Y.G.; Rubin, K.H.R.; Shipman, J.E.; Ying, L.T.

    2003-01-01

    Experiments have shown that voltage breakdown in superconducting niobium RF cavities is in many ways similar to voltage breakdown on niobium cathodes in DC voltage gaps; most striking are the distinctive starburst patterns and craters that mark the site of voltage breakdown in both superconducting cavities and DC vacuum gaps. Therefore, we can learn much about RF breakdown from simpler, faster DC experiments. We have direct evidence, in the form of before'' and ''after'' pictures, that breakdown events caused by high surface electric fields occur with high probability at contaminant particles on surfaces. Although the pre-breakdown behavior (field emission) seems to depend mostly on the contaminant particles present and little on the substrate, the breakdown event itself is greatly affected by the substrate-niobium, heavily oxidized niobium, electropolished copper, and diamond-machined copper cathodes lead to different kinds of breakdown events. By studying DC voltage breakdown we hope to learn more details about the processes involved in the transition from field emission to catastrophic arcing and the cratering of the surface; as well as learning how to prevent breakdown, we would like to learn how to cause breakdown, which could be important when ''processing'' cavities to reduce field emission. (author)

  19. [Development of residual voltage testing equipment].

    Science.gov (United States)

    Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

    2014-07-01

    For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

  20. Silicon Carbide Emitter Turn-Off Thyristor

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2008-01-01

    Full Text Available A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 A/cm2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 W/cm2 conduction and the 100 W/cm2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV and higher frequency (10 kHz are needed.

  1. A New Asymmetrical Current-fed Converter with Voltage Lifting

    Directory of Open Access Journals (Sweden)

    DELSHAD, M.

    2011-05-01

    Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

  2. Study on Turn-to-turn Short Circuit On一line Monitoring System for Dry一type Ai r一core Reactor

    Directory of Open Access Journals (Sweden)

    GAO Zi-wei

    2017-04-01

    Full Text Available The change of current value caused by turn-to-turn short circuit of dry-type air-core reactor is so little that failure detection is difficult to be carried out. In order to solve this problem,a new on-line monitoring system based on impedance variation of turn-to-turn short circuit is proposed. The numerical method is applied to analyze the variation of equivalent resistance and equivalent reactance when dry-type air-core reactor winding short circuit happens in different places,and the monitoring method based on harmonic analysis method and quasi- synchronization sampling method is analyzed by theory. The hardware system,which takes single-chip microcomputer as the core of data processing and logic control,completes data acquisition of voltage signal and current signal of the reactor. In the respect of software design,the impedance variation will be uploaded to the PC after it has been calculated by using the above monitoring method,and then monitoring of turn-to-turn short circuit fault will be realized. Finally,the design of on-line monitoring system is studied by testing. The research result shows that,the equivalent resistance increases and the equivalent reactance decreases when turn-to-turn short circuit occurs,and the variation of equivalent resistance is more obvious than equivalent reactance. The experiment results prove that this monitoring method is true and the on-line monitoring system is feasible.

  3. Improved Turn-on Characteristics of Fast High Current Thyristors

    CERN Document Server

    Ducimetière, L; Vossenberg, Eugène B

    1999-01-01

    The beam dumping system of CERN's Large Hadron Collider (LHC) is equipped with fast solid state closing switches, designed for a hold-off voltage of 30 kV and a quasi half sine wave current of 20 kA, with 3 ms rise time, a maximum di/dt of 12 kA/ms and 2 ms fall time. The design repetition rate is 20 s. The switch is composed of ten Fast High Current Thyristors (FHCT’s), which are modified symmetric 4.5 kV GTO thyristors of WESTCODE. Recent studies aiming at improving the turn-on delay, switching speed and at decreasing the switch losses, have led to test an asymmetric not fully optimised GTO thyristor of WESTCODE and an optimised device of GEC PLESSEY Semiconductor (GPS), GB. The GPS FHCT, which gave the best results, is a non irradiated device of 64 mm diameter with a hold-off voltage of 4.5 kV like the symmetric FHCT. Tests results of the GPS FHCT show a reduction in turn-on delay of 40 % and in switching losses of almost 50 % with respect to the symmetric FHCT of WESTCODE. The GPS device can sustain an i...

  4. Preliminary study on field buses for the control system of the high voltage of the ATLAS hadronic calorimeter

    International Nuclear Information System (INIS)

    Drevet, F.; Chadelas, R.; Montarou, G.

    1996-01-01

    We present here after a preliminary study on field buses for the control system of the high voltage of the photomultipliers of the TILECAL calorimeter. After some generalities, different commercial buses are reviewed (CAN, ARCET, WorldFIP, Profibus and LonWorks). The Profibus and LonWorks solution are more extensively studies as a possible solution for the high voltage system of the TILE hadronic calorimeter. (authors)

  5. An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

    International Nuclear Information System (INIS)

    Hu Xia-Rong; Lü Rui

    2014-01-01

    In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal—oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate. (interdisciplinary physics and related areas of science and technology)

  6. Numerical simulation of the temperature, electron density, and electric field distributions near the ionospheric reflection height after turn-on of a powerful HF wave

    International Nuclear Information System (INIS)

    Muldrew, D.B.

    1986-01-01

    The time variation of the electron temperature profile in the ionosphere following turn-on of a powerful 1-s HF pulse is determined numerically from the energy balance equation. Using this and the equations of motion and continuity for a plasma, the effect of heating and the pondermotive force of a powerful HF wave on the electron density and electric field distributions are determined by numerical simulation. The temperature variation and ponderomotive force modify the density distribution, and this new density distribution, in turn, modifies the electric field distribution of the HF wave. The density deviations grow for a few hundred milliseconds after HF turn-on and then begin to fluctuate in time. At all heights the wave number of the density deviations is approximately twice the wave number of the HF wave. For electric fields near reflection of about 6.0 V/m, the electric field distribution becomes complicated, apparently depending on Bragg scattering of the HF wave from the density deviations. Density impulses propagate away (up and down) from electric field maxima, at the ion thermal velocity, at both turn-on and turn-off of the HF wave

  7. Electric field analysis of extra high voltage (EHV) underground cables using finite element method

    DEFF Research Database (Denmark)

    Kumar, Mantosh; Bhaskar, Mahajan Sagar; Padmanaban, Sanjeevikumar

    2017-01-01

    used for the insulator due electrical, thermal or environmental stress. Most of these problems are related to the electric field stress on the insulation of the underground cables. The objective of the electric field analysis by using different numerical techniques is to find electric field stress...... electric field stress and other parameters of EHV underground cables with given boundary conditions using 2-D electric field analysis software package (IES-ELECTRO module) which is based on the finite element method (FEM).......Transmission and Distribution of electric power through underground cables is a viable alternative to overhead lines, particularly in residential or highly populated areas. The electrical stresses are consequences of regular voltages and over voltages and the thermal stresses are related to heat...

  8. Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

    International Nuclear Information System (INIS)

    Saeidmanesh, M; Ismail, Razali; Khaledian, M; Karimi, H; Akbari, E

    2013-01-01

    An analytical model is presented for threshold voltage roll-off of double gate bilayer graphene field-effect transistors. To this end, threshold voltage models of short- and long-channel states have been developed. In the short-channel case, front and back gate potential distributions have been modelled and used. In addition, the tunnelling probability is modelled and its effect is taken into consideration in the potential distribution model. To evaluate the accuracy of the potential model, FlexPDE software is employed with proper boundary conditions and a good agreement is observed. Using the proposed models, the effect of several structural parameters on the threshold voltage and its roll-off are studied at room temperature. (paper)

  9. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

  10. A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

    Science.gov (United States)

    Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

    2018-04-01

    This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

  11. Role of parasitic capacitances in power MOSFET turn-on switching speed limits

    DEFF Research Database (Denmark)

    Cittanti, Davide; Iannuzzo, Francesco; Hoene, Eckart

    2017-01-01

    This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents...... is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent...

  12. Characteristics of voltage regulators with serial NPN transistor in the fields of medium and high energy photons

    International Nuclear Information System (INIS)

    Vukic, V.; Osmokrovic, P.

    2007-01-01

    Variation of collector - emitter dropout voltage on serial transistors of voltage regulators LM2990T-5 and LT1086CT5 were used as the parameter for detection of examined devices' radiation hardness in X and ? radiation fields. Biased voltage regulators with serial super-β transistor in the medium dose rate X radiation field had significantly different response from devices with conventional serial NPN transistor. Although unbiased components suffered greater damage in most cases, complete device failure happened only among the biased components with serial super-β transistor in Bremsstrahlung field. Mechanisms of transistors degradation in ionizing radiation fields were analysed [sr

  13. Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

    Science.gov (United States)

    Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

    2017-12-01

    We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

  14. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  15. Mobility overestimation due to gated contacts in organic field-effect transistors

    Science.gov (United States)

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  16. Magnetosphere-ionosphere coupling currents in Jupiter's middle magnetosphere: effect of magnetosphere-ionosphere decoupling by field-aligned auroral voltages

    Directory of Open Access Journals (Sweden)

    J. D. Nichols

    2005-03-01

    Full Text Available We consider the effect of field-aligned voltages on the magnetosphere-ionosphere coupling current system associated with the breakdown of rigid corotation of equatorial plasma in Jupiter's middle magnetosphere. Previous analyses have assumed perfect mapping of the electric field and flow along equipotential field lines between the equatorial plane and the ionosphere, whereas it has been shown that substantial field-aligned voltages must exist to drive the field-aligned currents associated with the main auroral oval. The effect of these field-aligned voltages is to decouple the flow of the equatorial and ionospheric plasma, such that their angular velocities are in general different from each other. In this paper we self-consistently include the field-aligned voltages in computing the plasma flows and currents in the system. A third order differential equation is derived for the ionospheric plasma angular velocity, and a power series solution obtained which reduces to previous solutions in the limit that the field-aligned voltage is small. Results are obtained to second order in the power series, and are compared to the original zeroth order results with no parallel voltage. We find that for system parameters appropriate to Jupiter the effect of the field-aligned voltages on the solutions is small, thus validating the results of previously-published analyses.

  17. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  18. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Directory of Open Access Journals (Sweden)

    R. N. Bhowmik

    2015-06-01

    Full Text Available We have studied current-voltage (I-V characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP 0.345(± 0.001 V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%, magnetoresistance (70-135 % and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  19. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

    Science.gov (United States)

    Bhowmik, R. N.; Vijayasri, G.

    2015-06-01

    We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  20. New series half-bridge converters with the balance input split capacitor voltages

    Science.gov (United States)

    Lin, Bor-Ren; Chiang, Huann-Keng; Wang, Shang-Lun

    2016-03-01

    This article presents a new dc/dc converter to perform the main functions of zero voltage switching (ZWS), low converter size, high switching frequency and low-voltage stress. Metal-oxide-semiconductor field-effect transistors (MOSFETs) with high switching frequency are used to reduce the converter size and increase circuit efficiency. To overcome low-voltage stress and high turn-on resistance of MOSFETs, the series half-bridge topology is adopted in the proposed converter. Hence, the low-voltage stress MOSFETs can be used for medium-input voltage applications. The asymmetric pulse-width modulation is used to generate the gating signals and achieve the ZWS. On the secondary side, the parallel connection of two diode rectifiers is adopted to reduce the current rating of passive components. On the primary side, the series connection of two transformers is used to balance two output inductor currents. Two flying capacitors are used to automatically balance the input split capacitor voltages. Finally, experiments with 1000 W rated power are performed to verify the theoretical analysis and the effectiveness of proposed converter.

  1. Analysis of Operating Performance and Three Dimensional Magnetic Field of High Voltage Induction Motors with Stator Chute

    Directory of Open Access Journals (Sweden)

    WANG Qing-shan

    2017-06-01

    Full Text Available In view of the difficulties on technology of rotor chute in high voltage induction motor,the desig method adopted stator chute structure is put forward. The mathematical model of three dimensional nonlinear transient field for solving stator chute in high voltage induction motor is set up. Through the three dimensional entity model of motor,three dimensional finite element method based on T,ψ - ψ electromagnetic potential is adopted for the analysis and calculation of stator chute in high voltage induction motor under rated condition. The distributions long axial of fundamental wave magnetic field and tooth harmonic wave magnetic field are analyzed after stator chute,and the weakening effects on main tooth harmonic magnetic field are researched. Further more,the comparison analysis of main performance parameters of chute and straight slot is carried out under rated condition. The results show that the electrical performance of stator chute is better than that of straight slot in high voltage induction motor,and the tooth harmonic has been sharply decreased

  2. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  3. SYNTHESIS OF ACTIVE SCREENING SYSTEM OF MAGNETIC FIELD OF HIGH VOLTAGE POWER LINES OF DIFFERENT DESIGN TAKING INTO ACCOUNT SPATIAL AND TEMPORAL DISTRIBUTION OF MAGNETIC FIELD

    Directory of Open Access Journals (Sweden)

    B.I. Kuznetsov

    2017-04-01

    Full Text Available Purpose. Analyze the spatial and temporal distribution of the magnetic field of high voltage power lines with different design allowing and development of recommendations for the design of active screening systems by magnetic field of high voltage power lines. Methodology. Analysis of the spatial and temporal distribution of the magnetic field of high voltage power lines of different design allowing is made on the basis of Maxwell's equations solutions in the quasi-stationary approximation. Determination of the number, configuration, spatial arrangement and the compensation coil currents is formulated in the form of multiobjective optimization problem that is solved by multi-agent multiswarm stochastic optimization based on Pareto optimal solutions. Results of active screening system for the synthesis of various types of transmission lines with different numbers of windings controlled. The possibility of a significant reduction in the level of the flux density of the magnetic field source within a given region of space. Originality. For the first time an analysis of the spatial and temporal distribution of the magnetic field of power lines with different types and based on findings developed recommendations for the design of active screening system by magnetic field of high voltage power lines. Practical value. Practical recommendations on reasonable choice of the number and spatial arrangement of compensating windings of active screening system by magnetic field of high voltage power lines of different design allowing for the spatial and temporal distribution of the magnetic field. Results of active screening system synthesis of the magnetic field of industrial frequency generated by single-circuit 110 kV high voltage power lines with the supports have 330 - 1T «triangle» rotating magnetic field with full polarization in a residential five-storey building, located near the power lines. The system contains three compensating coil and reduces

  4. High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

    International Nuclear Information System (INIS)

    Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

    1999-01-01

    The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 micros (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract

  5. High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

    Energy Technology Data Exchange (ETDEWEB)

    Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

    1999-04-10

    The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 {micro}s (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract.

  6. High field superconducting magnets

    Science.gov (United States)

    Hait, Thomas P. (Inventor); Shirron, Peter J. (Inventor)

    2011-01-01

    A superconducting magnet includes an insulating layer disposed about the surface of a mandrel; a superconducting wire wound in adjacent turns about the mandrel to form the superconducting magnet, wherein the superconducting wire is in thermal communication with the mandrel, and the superconducting magnet has a field-to-current ratio equal to or greater than 1.1 Tesla per Ampere; a thermally conductive potting material configured to fill interstices between the adjacent turns, wherein the thermally conductive potting material and the superconducting wire provide a path for dissipation of heat; and a voltage limiting device disposed across each end of the superconducting wire, wherein the voltage limiting device is configured to prevent a voltage excursion across the superconducting wire during quench of the superconducting magnet.

  7. Field gradient calculation of HTS double-pancake coils considering the slanted turns and the splice

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Geon Woo; Kim, Jin Sub; Song, Seung Hyun; Ko, Tae Kuk [Yonsei University, Seoul (Korea, Republic of); Lee, Woo Seung [JH ENGINEERING CO., LTD., Gunpo (Korea, Republic of); Lee, On You [Korea National University of Transportation, Chungju (Korea, Republic of)

    2017-03-15

    To obtain Nuclear Magnetic Resonance (NMR) measurement of membrane protein, an NMR magnet is required to generate high intensity, homogeneity, and stability of field. A High-Temperature Superconducting (HTS) magnet is a promising alternative to a conventional Low-Temperature Superconducting (LTS) NMR magnet for high field, current density, and stability margin. Conventionally, an HTS coil has been wound by several winding techniques such as Single-Pancake (SP), Double-Pancake (DP), and layer-wound. The DP winding technique has been frequently used for a large magnet because long HTS wire is generally difficult to manufacture, and maintenance of magnet is convenient. However, magnetic field generated by the slanted turns and the splice leads to field inhomogeneity in Diameter of Spherical Volume (DSV). The field inhomogeneity degrades performance of NMR spectrometer and thus effect of the slanted turns and the splice should be analyzed. In this paper, field gradient of HTS double-pancake coils considering the slanted turns and the splice was calculated using Biot-Savart law and numerical integration. The calculation results showed that magnetic field produced by the slanted turns and the splice caused significant inhomogeneity of field.

  8. A New Contribution in Reducing Electric Field Distribution Within/Around Medium Voltage Underground Cable Terminations

    Directory of Open Access Journals (Sweden)

    S. S. Desouky

    2017-10-01

    Full Text Available Ιn medium voltage cables, the stress control layers play an important part in controlling the electric field distribution around the medium voltage underground cable terminations. Underground cable accessories, used in medium voltage cable systems, need a stress control tube in order to maintain and control the insulation level which is designed for long life times. The term “electrical stress control” refers to the cable termination analysis of optimizing the electrical stress in the area of insulation shield cutback to reduce the electrical field concentration at this point in order to reduce breakdown in the cable insulation. This paper presents the effect of some materials of different relative permittivities and geometrical regulation with the curved shape stress relief cones on the electric field distribution of cable termination. The optimization was done by comparing the results of eight materials used. Also, the effect of the change in the thickness of the stress control tube is presented. The modeling design is very important for engineers to find the optimal solution of terminator design of medium voltage cables. This paper also describes the evolution of stress control systems and their benefits. A developed program using Finite Element Method (FEM has calculated a numerical study to the stress control layering electric field distribution.

  9. Enhancing Food Processing by Pulsed and High Voltage Electric Fields: Principles and Applications.

    Science.gov (United States)

    Wang, Qijun; Li, Yifei; Sun, Da-Wen; Zhu, Zhiwei

    2018-02-02

    Improvements in living standards result in a growing demand for food with high quality attributes including freshness, nutrition and safety. However, current industrial processing methods rely on traditional thermal and chemical methods, such as sterilization and solvent extraction, which could induce negative effects on food quality and safety. The electric fields (EFs) involving pulsed electric fields (PEFs) and high voltage electric fields (HVEFs) have been studied and developed for assisting and enhancing various food processes. In this review, the principles and applications of pulsed and high voltage electric fields are described in details for a range of food processes, including microbial inactivation, component extraction, and winemaking, thawing and drying, freezing and enzymatic inactivation. Moreover, the advantages and limitations of electric field related technologies are discussed to foresee future developments in the food industry. This review demonstrates that electric field technology has a great potential to enhance food processing by supplementing or replacing the conventional methods employed in different food manufacturing processes. Successful industrial applications of electric field treatments have been achieved in some areas such as microbial inactivation and extraction. However, investigations of HVEFs are still in an early stage and translating the technology into industrial applications need further research efforts.

  10. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  11. Electric field control methods for foil coils in high-voltage linear actuators

    NARCIS (Netherlands)

    Beek, van T.A.; Jansen, J.W.; Lomonova, E.A.

    2015-01-01

    This paper describes multiple electric field control methods for foil coils in high-voltage coreless linear actuators. The field control methods are evaluated using 2-D and 3-D boundary element methods. A comparison is presented between the field control methods and their ability to mitigate

  12. Enhanced Electron Affinity and Exciton Confinement in Exciplex-Type Host: Power Efficient Solution-Processed Blue Phosphorescent OLEDs with Low Turn-on Voltage.

    Science.gov (United States)

    Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Jiang, Wei

    2016-01-27

    A benzimidazole/phosphine oxide hybrid 1,3,5-tris(1-(4-(diphenylphosphoryl)phenyl)-1H-benzo[d]imidazol-2-yl)benzene (TPOB) was newly designed and synthesized as the electron-transporting component to form an exciplex-type host with the conventional hole-transporting material tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Because of the enhanced triplet energy and electron affinity of TPOB, the energy leakage from exciplex-state to the constituting molecule was eliminated. Using energy transfer from exciplex-state, solution-processed blue phosphorescent organic light-emitting diodes (PHOLEDs) achieved an extremely low turn-on voltage of 2.8 V and impressively high power efficiency of 22 lm W(-1). In addition, the efficiency roll-off was very small even at luminance up to 10 000 cd m(-2), which suggested the balanced charge transfer in the emission layer. This study demonstrated that molecular modulation was an effective way to develop efficient exciplex-type host for high performanced PHOLEDs.

  13. Field emitters with low turn on electric field based on carbon fibers

    International Nuclear Information System (INIS)

    Wang Qilong; Mu Hui; Zhang Xiaobing; Lei Wei; Wang Jinchan; Zhao Hongping

    2007-01-01

    Field emitters of vertical carbon fibers on a silicon substrate are fabricated by catalytic chemical vapor deposition. After an ageing process of 150 min, field emission measurement of the fibers is carried out in a vacuum chamber with a base pressure of 5.0 x 10 -4 Pa. The experimental results display that field emission performance of the carbon fibers depends strongly on the vacuum level during the experiments. After the field emission measurement, damage to the carbon fiber field emitters is observed from the scanning electron microscopic images

  14. Influence of water trees on breakdown voltage of polymeric cables insulations

    Energy Technology Data Exchange (ETDEWEB)

    Stancu, Cristina [INCDIE ICPE CA, Bucharest (Romania); Notingher, Petru V.; Plopeanu, Mihai Gabriel [Politehnica University of Bucharest, Bucharest (Romania)

    2011-07-01

    In a previous paper was shown that water trees development modifies considerably the electric field repartition, which increases significantly in the vicinity of treed areas. In order to find the water trees influence on the breakdown voltage, in the present paper, an experimental study on model cables insulated with low density polyethylene is done. In insulation samples, water trees with various dimensions and densities were developed. For the reduction of the test duration, an electric field with a higher frequency (3-5 kHz) was used. For breakdown voltage measurement an automatic setup was realized. For each value of the ageing time the dimensions and densities of water trees and breakdown voltage were measured and the dependency of the breakdown voltage with these quantities were analysed. The results show a significant reduction of the breakdown voltage of treed cables insulations compared to un-treed ones. Key words: polyethylene, water treeing, electric field, breakdown, power cables.

  15. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Directory of Open Access Journals (Sweden)

    Qi Liu

    2014-08-01

    Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  16. Report on health and environmental effects of electromagnetic fields produced by high and very high voltage lines

    International Nuclear Information System (INIS)

    2010-01-01

    In its first part, this report presents some characteristics and properties of electric, magnetic and electromagnetic fields, indicates which are the artificial sources of exposure to very low frequency electromagnetic fields, and gives an overview of some investigations and researches on the exposure to magnetic fields. The second part contains a description of the French high and very high voltage network, its role and development. It also discusses the possibility of burying these lines, and outlines the importance of citizen participation. The third part deals with the potential impacts on health; it comments the results of international studies, discusses the problem of electro-hypersensitivity (EHS) and the relationship between electric and magnetic fields and infantile leukaemia. The fourth part deals with the potential impacts on the environment, animals, agriculture

  17. Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

    International Nuclear Information System (INIS)

    Cuneo, M.E.; Hanson, D.L.; Menge, P.R.; Poukey, J.W.; Savage, M.E.

    1994-01-01

    SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, and beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( ∼ 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models

  18. A gate drive circuit for gate-turn-off (GTO) devices in series stack

    International Nuclear Information System (INIS)

    Despe, O.

    1999-01-01

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

  19. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    Energy Technology Data Exchange (ETDEWEB)

    Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2013-11-15

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

  20. Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

    International Nuclear Information System (INIS)

    Venkattraman, Ayyaswamy

    2013-01-01

    The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

  1. A high performance gate drive for large gate turn off thyristors

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, C.P.

    1993-01-01

    Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

  2. Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

    NARCIS (Netherlands)

    Jia, Y.; Or, S.W.; Chan, H.L.W.; Jiao, J.; Luo, H.; Van der Zwaag, S.

    2009-01-01

    We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to

  3. Study on the streamer inception characteristics under positive lightning impulse voltage

    Directory of Open Access Journals (Sweden)

    Zezhong Wang

    2017-11-01

    Full Text Available The streamer is the main process in an air gap discharge, and the inception characteristics of streamers have been widely applied in engineering. Streamer inception characteristics under DC voltage have been studied by many researchers, but the inception characteristics under impulse voltage, and particularly under lightning impulse voltage with a high voltage rise rate have rarely been studied. A measurement system based on integrated optoelectronic technology has been proposed in this paper, and the streamer inception characteristics in a 1-m-long rod-plane air gap that was energized by a positive lightning impulse voltage have been researched. We have also measured the streamer inception electric field using electrodes with different radii of curvature and different voltage rise rates. As a result, a modified empirical criterion for the streamer inception electric field that considers the voltage rise rate has been proposed, and the wide applicability of this criterion has been proved. Based on the streamer inception time-lag obtained, we determined that the field distribution obeys a Rayleigh distribution, which explains the change law of the streamer inception time-lag. The characteristic parameter of the Rayleigh distribution lies in the range from 0.6 to 2.5 when the radius of curvature of the electrode head is in the range from 0.5 cm to 2.5 cm and the voltage rise rate ranges from 80 kV/μs to 240kV/μs under positive lightning impulse voltage.

  4. Study on the streamer inception characteristics under positive lightning impulse voltage

    Science.gov (United States)

    Wang, Zezhong; Geng, Yinan

    2017-11-01

    The streamer is the main process in an air gap discharge, and the inception characteristics of streamers have been widely applied in engineering. Streamer inception characteristics under DC voltage have been studied by many researchers, but the inception characteristics under impulse voltage, and particularly under lightning impulse voltage with a high voltage rise rate have rarely been studied. A measurement system based on integrated optoelectronic technology has been proposed in this paper, and the streamer inception characteristics in a 1-m-long rod-plane air gap that was energized by a positive lightning impulse voltage have been researched. We have also measured the streamer inception electric field using electrodes with different radii of curvature and different voltage rise rates. As a result, a modified empirical criterion for the streamer inception electric field that considers the voltage rise rate has been proposed, and the wide applicability of this criterion has been proved. Based on the streamer inception time-lag obtained, we determined that the field distribution obeys a Rayleigh distribution, which explains the change law of the streamer inception time-lag. The characteristic parameter of the Rayleigh distribution lies in the range from 0.6 to 2.5 when the radius of curvature of the electrode head is in the range from 0.5 cm to 2.5 cm and the voltage rise rate ranges from 80 kV/μs to 240kV/μs under positive lightning impulse voltage.

  5. Accuracy of Voltage Signal Measurement During Radiofrequency Delivery Through the SMARTTOUCH Catheter.

    Science.gov (United States)

    Safavi-Naeini, Payam; Zafar-Awan, Dreema; Zhu, Hongjian; Zablah, Gerardo; Ganapathy, Anand V; Rasekh, Abdi; Saeed, Mohammad; Razavi, Joanna Esther Molina; Razavi, Mehdi

    2017-01-01

    Current methods for measuring voltage during radiofrequency (RF) ablation (RFA) necessitate turning off the ablation catheter. If voltage could be accurately read without signal attenuation during RFA, turning off the catheter would be unnecessary, allowing continuous ablation. We evaluated the accuracy of the Thermocool SMARTTOUCH catheter for measuring voltage while RF traverses the catheter. We studied 26 patients undergoing RFA for arrhythmias. A 7.5F SMARTTOUCH catheter was used for sensing voltage and performing RFA. Data were collected from the Carto-3 3-dimensional mapping system. Voltages were measured during ablation (RF-ON) and immediately before or after ablation (RF-OFF). In evaluating the accuracy of RF-ON measurements, we utilized the RF-OFF measure as the gold standard. We measured 465 voltage signals. The median values were 0.2900 and 0.3100 for RF-ON and RF-OFF, respectively. Wilcoxon signed rank testing showed no significant difference in these values (P = 0.608). The intraclass correlation coefficient (ICC) was 0.96, indicating that voltage measurements were similarly accurate during RF-OFF versus RF-ON. Five patients had baseline atrial fibrillation (AF), for whom 82 ablation points were measured; 383 additional ablation points were measured for the remaining patients. The voltages measured during RF-ON versus RF-OFF were similar in the presence of AF (P = 0.800) versus non-AF rhythm (P = 0.456) (ICC, 0.96 for both). Voltage signal measurement was similarly accurate during RF-ON versus RF-OFF independent of baseline rhythm. Physicians should consider not turning off the SMARTTOUCH ablation catheter when measuring voltage during RFA. © 2016 Wiley Periodicals, Inc.

  6. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-01

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  7. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-15

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  8. Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R.Venkataraman Nagar, Kalapet, Puducherry - 605 014 (India)

    2015-06-15

    We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

  9. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

    2014-08-15

    A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  10. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  11. Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

    International Nuclear Information System (INIS)

    Hao Kuan-Sheng; Huang Song-Ling; Zhao Wei; Wang Shen

    2011-01-01

    This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting's theorem. Then the currents under different frequencies are calculated according to Ohm's law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT). Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Furthermore, the influences of lift-off distances and the non-uniform static magnetic field on the Lorentz force under pulsed voltage excitation are studied. (interdisciplinary physics and related areas of science and technology)

  12. Magnetic fields and childhood cancer: an epidemiological investigation of the effects of high-voltage underground cables

    International Nuclear Information System (INIS)

    Bunch, K J; Vincent, T J; Murphy, M F G; Swanson, J

    2015-01-01

    Epidemiological evidence of increased risks for childhood leukaemia from magnetic fields has implicated, as one source of such fields, high-voltage overhead lines. Magnetic fields are not the only factor that varies in their vicinity, complicating interpretation of any associations. Underground cables (UGCs), however, produce magnetic fields but have no other discernible effects in their vicinity. We report here the largest ever epidemiological study of high voltage UGCs, based on 52 525 cases occurring from 1962–2008, with matched birth controls. We calculated the distance of the mother’s address at child’s birth to the closest 275 or 400 kV ac or high-voltage dc UGC in England and Wales and the resulting magnetic fields. Few people are exposed to magnetic fields from UGCs limiting the statistical power. We found no indications of an association of risk with distance or of trend in risk with increasing magnetic field for leukaemia, and no convincing pattern of risks for any other cancer. Trend estimates for leukaemia as shown by the odds ratio (and 95% confidence interval) per unit increase in exposure were: reciprocal of distance 0.99 (0.95–1.03), magnetic field 1.01 (0.76–1.33). The absence of risk detected in relation to UGCs tends to add to the argument that any risks from overhead lines may not be caused by magnetic fields. (paper)

  13. Number-to-voltage converter on commutated condensers

    International Nuclear Information System (INIS)

    Grekhov, Yu.N.

    1975-01-01

    A code-voltage converter using precision voltage dividers based on commutated capacitors [1] is described which is distinguished by the absence of precision elements. Each digit includes eight field-effect transistors in two 1KT682 microcircuit assemblies and three microcapacitors with a conventional unstable capacitance 6200 pF +- 50%. The converter has a speed of response that is not inferior to that of converters based on R-2R matrices, while in time stability of the characteristics, low interference level, and low output impedance it is superior to such converters

  14. Air-gap field, induced voltage and thrust in the short-stator linear induction motor

    Energy Technology Data Exchange (ETDEWEB)

    Deleroi, W

    1980-07-15

    The description of the magnetic field in the air-gap of a short-primary linear induction motor, and the subsequent calculation of the thrust developed and the voltages induced in the stator bars can be made by using balancing waves. These balancing waves are generated at any point where the field wave that would exist in a machine of infinite length is disturbed. In the linear motor these disturbances occur at the ends of the stator iron and at discontinuities in the distribution of the stator winding, which exist in machines having stepped windings. From the points where they are generated, free balancing waves travel in two directions and determine the performance of these machines to a large extent. The voltage they induce in a stator bar can be determined from the core flux and mapped on a phasor diagram. The resulting voltage phasor follows a logarithmic spiral. The resulting voltages induced in the three phase windings form a strongly asymmetrical system which can be split-up into positive-, negative- and zerosequence components depending on the slip. The tangential forces may be calculated as the product of the magnetic flux density in the air-gap and the linear current density in either the stator or the reaction rail. As the 'magnetic tail' outside the machine also gives rise to forces in the direction of motion, both methods yield quite different force distributions, though for the resulting force the same value is found.

  15. Voltage switching technique for detecting nuclear spin polarization in a quantum dot

    International Nuclear Information System (INIS)

    Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji

    2010-01-01

    We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)

  16. Electromagnetic fields (UHF) increase voltage sensitivity of membrane ion channels; possible indication of cell phone effect on living cells.

    Science.gov (United States)

    Ketabi, N; Mobasheri, H; Faraji-Dana, R

    2015-03-01

    The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

  17. High voltage diagnostics on electrical insulation of supersonducting magnets

    International Nuclear Information System (INIS)

    Irmisch, M.

    1995-12-01

    The high voltage (HV) performance of superconducting magnets of large dimensions, e.g. as needed in fusion reactors, is a challange in the field of high voltage technology, i.e. especially in the field of cryogenic high voltage components and with respect to questions of HV insulation diagnostics at low temperature. By using the development of POLO - a superconducting prototype coil of a tokamak poloidal field coil - as an example, this work deals with special problems of how to get use of conventional HV test techniques for diagnostics under special cryogenic boundary conditions. As a first approach to gain experience in the field of phase resolved partial discharge (PRPD) measurements during operation of a superconductive coil, the POLO coil was subject to several high voltage tests. Compared with DC insulation resistance measurements and capacitive impulse voltage discharges to the coil, the AC PD measurements have been the only way to observe special characteristics of the electrical insulation with respect to the cooling down of the coil from 300 K to 4.2 K. The PRPD measurement technique thereby has proofed as a suitable diagnostic tool. This work can serve as basic data to be comparable within further projects of electrical insulation diagnostics at cryogenic temperatures. (orig.)

  18. Assessment of voltage dips based on field measurements in MV networks

    NARCIS (Netherlands)

    Weldemariam, L.E.; Papathanasiou, F.; Cuk, V.; Cobben, J.F.G.; Kling, W.L.

    Voltage dip is considered as the PQ problem related to the highest financial losses for the customers. It occurs unpredictably mainly due to short-circuit faults in the networks. Network operators and customers want to know more about the occurrence and the potential impact of voltage dips. PQ

  19. Decomposition of Composite Electric Field in a Three-Phase D-Dot Voltage Transducer Measuring System

    Directory of Open Access Journals (Sweden)

    Xueqi Hu

    2016-10-01

    Full Text Available In line with the wider application of non-contact voltage transducers in the engineering field, transducers are required to have better performance for different measuring environments. In the present study, the D-dot voltage transducer is further improved based on previous research in order to meet the requirements for long-distance measurement of electric transmission lines. When measuring three-phase electric transmission lines, problems such as synchronous data collection and composite electric field need to be resolved. A decomposition method is proposed with respect to the superimposed electric field generated between neighboring phases. The charge simulation method is utilized to deduce the decomposition equation of the composite electric field and the validity of the proposed method is verified by simulation calculation software. With the deduced equation as the algorithm foundation, this paper improves hardware circuits, establishes a measuring system and constructs an experimental platform for examination. Under experimental conditions, a 10 kV electric transmission line was tested for steady-state errors, and the measuring results of the transducer and the high-voltage detection head were compared. Ansoft Maxwell Stimulation Software was adopted to obtain the electric field intensity in different positions under transmission lines; its values and the measuring values of the transducer were also compared. Experimental results show that the three-phase transducer is characterized by a relatively good synchronization for data measurement, measuring results with high precision, and an error ratio within a prescribed limit. Therefore, the proposed three-phase transducer can be broadly applied and popularized in the engineering field.

  20. A study on the effect of tool electrode thickness on MRR, and TWR in electrical discharge turning process

    Science.gov (United States)

    Gohil, Vikas; Puri, YM

    2018-04-01

    Turning by electrical discharge machining (EDM) is an emerging area of research. Generally, wire-EDM is used in EDM turning because it is not concerned with electrode tooling cost. In EDM turning wire electrode leaves cusps on the machined surface because of its small diameters and wire breakage which greatly affect the surface finish of the machined part. Moreover, one of the limitations of the process is low machining speed as compared to constituent processes. In this study, conventional EDM was employed for turning purpose in order to generate free-form cylindrical geometries on difficult-to-cut materials. Therefore, a specially designed turning spindle was mounted on a conventional die-sinking EDM machine to rotate the work piece. A conductive preshaped strip of copper as a forming tool is fed (reciprocate) continuously against the rotating work piece; thus, a mirror image of the tool is formed on the circumference of the work piece. In this way, an axisymmetric work piece can be made with small tools. The developed process is termed as the electrical discharge turning (EDT). In the experiments, the effect of machining parameters, such as pulse-on time, peak current, gap voltage and tool thickness on the MRR, and TWR were investigated and practical machining was carried out by turning of SS-304 stainless steel work piece.

  1. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  2. Current-voltage characteristics of a superconducting slab under a superimposed small AC magnetic field

    International Nuclear Information System (INIS)

    Matsushita, Teruo; Yamafuji, Kaoru; Sakamoto, Nobuyoshi.

    1977-01-01

    In case of applying superconductors to electric machinery or high intensity field magnets for fusion reactors, the superconductors are generally expected to be sensible to small field fluctuation besides DC magnetic field. The behavior of superconductors in DC magnetic field superimposed with small AC magnetic field has been investigated often experimentally, and the result has been obtained that the critical current at which DC flow voltage begins to appear extremely decreased or disappeared. Some theoretical investigations have been carried out on this phenomenon so far, however, their application has been limited to the region where frequency is sufficiently low or which is close to the critical magnetic field. Purpose of this report is to deal with the phenomenon in more unified way by analyzing the behavior of magnetic flux lines in a superconductor under a superimposed small AC field using the criticalstate model including viscous force. In order to solve the fundamental equation in this report, first the solution has been obtained in the quasi-static state neglecting viscous force, then about the cases that current density J is not more than Jc and J is larger than Jc, concerning the deviation from the quasi-static limit by employing successive approximation. Current-voltage characteristics have been determined by utilizing the above results. This method seems to be most promising at present except the case of extremely high frequency. (Wakatsuki, Y.)

  3. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  4. Online junction temperature measurement via internal gate resistance during turn-on

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Liserre, Marco

    2014-01-01

    A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal...... switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other...

  5. Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

    Science.gov (United States)

    Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

    2018-04-01

    In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

  6. Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

    Science.gov (United States)

    Martínez Hardigree, Josué F; Katz, Howard E

    2014-04-15

    Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

  7. A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block.

    KAUST Repository

    Lee, Seok Woo; Lee, Seung S; Yang, Eui-Hyeok

    2009-01-01

    This paper describes an experimental study on field emission characteristics of individual graphene layers for vacuum nanoelectronics. Graphene layers were prepared by mechanical exfoliation from a highly oriented pyrolyzed graphite block and placed on an insulating substrate, with the resulting field emission behavior investigated using a nanomanipulator operating inside a scanning electron microscope. A pair of tungsten tips controlled by the nanomanipulator enabled electric connection with the graphene layers without postfabrication. The maximum emitted current from the graphene layers was 170 nA and the turn-on voltage was 12.1 V.

  8. A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block.

    KAUST Repository

    Lee, Seok Woo

    2009-07-12

    This paper describes an experimental study on field emission characteristics of individual graphene layers for vacuum nanoelectronics. Graphene layers were prepared by mechanical exfoliation from a highly oriented pyrolyzed graphite block and placed on an insulating substrate, with the resulting field emission behavior investigated using a nanomanipulator operating inside a scanning electron microscope. A pair of tungsten tips controlled by the nanomanipulator enabled electric connection with the graphene layers without postfabrication. The maximum emitted current from the graphene layers was 170 nA and the turn-on voltage was 12.1 V.

  9. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  10. Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

    CERN Document Server

    Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

    2006-01-01

    The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

  11. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  12. Kinetics of charged particles in a high-voltage gas discharge in a nonuniform electrostatic field

    Energy Technology Data Exchange (ETDEWEB)

    Kolpakov, V. A., E-mail: kolpakov683@gmail.com; Krichevskii, S. V.; Markushin, M. A. [Korolev Samara National Research University (Russian Federation)

    2017-01-15

    A high-voltage gas discharge is of interest as a possible means of generating directed flows of low-temperature plasma in the off-electrode space distinguished by its original features [1–4]. We propose a model for calculating the trajectories of charges particles in a high-voltage gas discharge in nitrogen at a pressure of 0.15 Torr existing in a nonuniform electrostatic field and the strength of this field. Based on the results of our calculations, we supplement and refine the extensive experimental data concerning the investigation of such a discharge published in [1, 2, 5–8]; good agreement between the theory and experiment has been achieved. The discharge burning is initiated and maintained through bulk electron-impact ionization and ion–electron emission. We have determined the sizes of the cathode surface regions responsible for these processes, including the sizes of the axial zone involved in the discharge generation. The main effect determining the kinetics of charged particles consists in a sharp decrease in the strength of the field under consideration outside the interelectrode space, which allows a free motion of charges with specific energies and trajectories to be generated in it. The simulation results confirm that complex electrode systems that allow directed plasma flows to be generated at a discharge current of hundreds or thousands of milliamperes and a voltage on the electrodes of 0.3–1 kV can be implemented in practice [3, 9, 10].

  13. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  14. Field emission characteristics of a small number of carbon fiber emitters

    Directory of Open Access Journals (Sweden)

    Wilkin W. Tang

    2016-09-01

    Full Text Available This paper reports an experiment that studies the emission characteristics of small number of field emitters. The experiment consists of nine carbon fibers in a square configuration. Experimental results show that the emission characteristics depend strongly on the separation between each emitter, providing evidence of the electric field screening effects. Our results indicate that as the separation between the emitters decreases, the emission current for a given voltage also decreases. The authors compare the experimental results to four carbon fiber emitters in a linear and square configurations as well as to two carbon fiber emitters in a paired array. Voltage-current traces show that the turn-on voltage is always larger for the nine carbon fiber emitters as compared to the two and four emitters in linear configurations, and approximately identical to the four emitters in a square configuration. The observations and analysis reported here, based on Fowler-Nordheim field emission theory, suggest the electric field screening effect depends critically on the number of emitters, the separation between them, and their overall geometric configuration.

  15. Effect of Electric Field on Outwardly Propagating Spherical Flame

    KAUST Repository

    Mannaa, Ossama

    2012-06-01

    The thesis comprises effects of electric fields on a fundamental study of spheri­cal premixed flame propagation.Outwardly-propagating spherical laminar premixed flames have been investigated in a constant volume combustion vessel by applying au uni-directional electric potential.Direct photography and schlieren techniques have been adopted and captured images were analyzed through image processing. Unstretched laminar burning velocities under the influence of electric fields and their associated Markstein length scales have been determined from outwardly prop­agating spherical flame at a constant pressure. Methane and propane fuels have been tested to assess the effect of electric fields on the differential diffusion of the two fuels.The effects of varying equivalence ratios and applied voltages have been in­vestigated, while the frequency of AC was fixed at 1 KHz. Directional propagating characteristics were analyzed to identify the electric filed effect. The flame morphology varied appreciably under the influence of electric fields which in turn affected the burning rate of mixtures.The flame front was found to propagate much faster toward to the electrode at which the electric fields were supplied while the flame speeds in the other direction were minimally influenced. When the voltage was above 7 KV the combustion is markedly enhanced in the downward direction since intense turbulence is generated and as a result the mixing process or rather the heat and mass transfer within the flame front will be enhanced.The com­bustion pressure for the cases with electric fields increased rapidly during the initial stage of combustion and was relatively higher since the flame front was lengthened in the downward direction.

  16. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    International Nuclear Information System (INIS)

    Sulaeman, M. Y.; Widita, R.

    2014-01-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation

  17. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  18. Study on the Extremely Low Frequency (ELF) Electromagnetic Field (EMF) emission from overhead High-Voltage Transmission Lines

    International Nuclear Information System (INIS)

    Parthasarathy, S.R.; Roha Tukimin; Wan Saffiey Wan Abdullah; Zulkifli Yusof; Mohd Azizi Mohd Jali

    2016-01-01

    The paper highlights the study on the Extremely Low Frequency (ELF) Electromagnetic Field (EMF) emission performed at an overhead 275-kV High-Voltage Transmission Lines. The study comprised of assessment at the transmission lines on 3 different cases and locations in Klang Valley, specifically on a vacant land near the transmission line, inside and around the house at the vicinity of the transmission line and the area directly under the transmission line. The instrument setup and measurement protocols during the assessment were adopted from standard measurement method and procedures stipulated under the Institute of Electrical and Electronics Engineers (IEEE) Standard. The results were compared with the standards recommended in the International Commission on Non-Ionizing Radiation Protection (ICNIRP) guidelines. The results showed that the measured field strengths are within the safety limit with the highest measured exposure was 10.8 % and 1.8 % of the permissible exposure limit for the electric and magnetic field respectively. Both the field strengths were found to drop significantly against distance from the transmission lines where closer distances showed higher field strengths. Furthermore, the study revealed that buildings and other object such as trees and shrubs screen out the electric field, resulting in a lower value at indoor measurements and near the stated objects. In addition, higher value of electric and magnetic field strengths were recorded when assessment was being done directly under the transmission line compared to the lateral measurement. (author)

  19. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  20. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  1. Effect of eddy currents in the toroidal field coils of a tokamak with an air-core transformer

    International Nuclear Information System (INIS)

    Tani, Keiji; Kobayashi, Tomofumi; Tamura, Sanae

    1975-02-01

    The effect of eddy currents in the copper parts of the toroidal field coils is evaluated for a tokamak with the air-core transformer windings located inside the bore of the toroidal field coils. By introducing appropriate weights to the solutions obtained for a simplified cylindrical model, calculation is made of the induction toroidal electric field on the plasma axis in the presence of the eddy currents. The result shows that, to reduce the influence of the eddy currents on the induction one-turn voltage to the permissible level, it is necessary to choose the optimal number of turns and shape of the single conductor of the toroidal field coil. (auth.)

  2. Effect of neutron irradiation on the breakdown voltage of power MOSFET's

    International Nuclear Information System (INIS)

    Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

  3. Influence of unbalanced voltages on the movement of metallic ...

    Indian Academy of Sciences (India)

    Simulation is carried out on particle movement with balanced and unbalanced voltages and the ... dust, meteorological difficulties and safety. Hence ... work reported deals with the charge acquired by the particle due to macroscopic field at the.

  4. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  5. Prediction of breakdown voltages in novel gases for high voltage insulation

    International Nuclear Information System (INIS)

    Koch, M.

    2015-01-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

  6. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  7. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  8. Optimization of Pockels electric field in transverse modulated optical voltage sensor

    Science.gov (United States)

    Huang, Yifan; Xu, Qifeng; Chen, Kun-Long; Zhou, Jie

    2018-05-01

    This paper investigates the possibilities of optimizing the Pockels electric field in a transverse modulated optical voltage sensor with a spherical electrode structure. The simulations show that due to the edge effect and the electric field concentrations and distortions, the electric field distributions in the crystal are non-uniform. In this case, a tiny variation in the light path leads to an integral error of more than 0.5%. Moreover, a 2D model cannot effectively represent the edge effect, so a 3D model is employed to optimize the electric field distributions. Furthermore, a new method to attach a quartz crystal to the electro-optic crystal along the electric field direction is proposed to improve the non-uniformity of the electric field. The integral error is reduced therefore from 0.5% to 0.015% and less. The proposed method is simple, practical and effective, and it has been validated by numerical simulations and experimental tests.

  9. Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method

    International Nuclear Information System (INIS)

    Eriguchi, Koji; Ohta, Hiroaki; Ono, Kouichi; Wei Zhiqiang; Takagi, Takeshi

    2009-01-01

    Constant voltage stress (CVS) was applied to Fe-O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (t r ) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. From a polarity-dependent resistance increase determined by a time-zero measurement, the voltage and polarity-dependent t r were discussed on the basis of field- and structure-enhanced thermochemical reaction mechanisms

  10. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

  11. Constant potential high-voltage generator

    International Nuclear Information System (INIS)

    Resnick, T.A.; Dupuis, W.A.; Palermo, T.

    1980-01-01

    An X-ray tube voltage generator with automatic stabilization circuitry is disclosed. The generator includes a source of pulsating direct current voltage such as from a rectified 3 phase transformer. This pulsating voltage is supplied to the cathode and anode of an X-ray tube and forms an accelerating potential for electrons within that tube. The accelerating potential is stabilized with a feedback signal which is provided by a feedback network. The network includes an error signal generator which compares an instantaneous accelerating potential with a preferred reference accelerating potential and generates an error function. This error function is transmitted to a control tube grid which in turn causes the voltage difference between X-ray tube cathode and anode to stabilize and thereby reduce the error function. In this way stabilized accelerating potentials are realized and uniform X-ray energy distributions produced. (Auth.)

  12. Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  13. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  14. Coordinated voltage control for multiple wind plants in Eastern Wyoming. Analysis, field experience and validation

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Nicholas; MacDowell, Jason; Chmiel, Gary; Konopinski, Ryan; Gautam, Durga [GE Energy, Schenectady, NY (United States); Laughter, Grant; Hagen, Dave [PacifiCorp., Salt Lake City, UT (United States)

    2012-07-01

    At high levels of wind power penetration, multiple wind plants may be the predominant generation resource over large geographic areas. Thus, not only do wind plants need to provide a high level of functionality, they must coordinate properly with each other. This paper describes the analysis and field testing of wind plant voltage controllers designed to improve system voltage performance through passive coordination. The described wind power plant controls can coordinate the real and reactive power response of multiple wind turbines and thereby make the plant function as a single ''grid friendly'' power generation source. For this application, involving seven large wind plants with predominantly GE wind turbines in Eastern Wyoming, the voltage portion of the controllers were configured and tuned to allow the collective reactive power response of multiple wind plants in the region to work well together. This paper presents the results of the initial configuration and tuning study, and the results of the subsequent field tuning and testing of the modified controls. The paper also presents some comparisons of the measured field performance with the stability simulation models, which show that the available wind plant models provide accurate, high fidelity results for actual operating conditions of commercial wind power plants. (orig.)

  15. The effect of a defective BSF layer on solar cell open circuit voltage. [Back Surface Field

    Science.gov (United States)

    Weizer, V. G.

    1985-01-01

    A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

  16. Prediction of breakdown voltages in novel gases for high voltage insulation

    Energy Technology Data Exchange (ETDEWEB)

    Koch, M.

    2015-07-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

  17. A mathematical model for predicting photo-induced voltage and photostriction of PLZT with coupled multi-physics fields and its application

    International Nuclear Information System (INIS)

    Huang, J H; Wang, X J; Wang, J

    2016-01-01

    The primary purpose of this paper is to propose a mathematical model of PLZT ceramic with coupled multi-physics fields, e.g. thermal, electric, mechanical and light field. To this end, the coupling relationships of multi-physics fields and the mechanism of some effects resulting in the photostrictive effect are analyzed theoretically, based on which a mathematical model considering coupled multi-physics fields is established. According to the analysis and experimental results, the mathematical model can explain the hysteresis phenomenon and the variation trend of the photo-induced voltage very well and is in agreement with the experimental curves. In addition, the PLZT bimorph is applied as an energy transducer for a photovoltaic–electrostatic hybrid actuated micromirror, and the relation of the rotation angle and the photo-induced voltage is discussed based on the novel photostrictive mathematical model. (paper)

  18. LDRD final report on confinement of cluster fusion plasmas with magnetic fields.

    Energy Technology Data Exchange (ETDEWEB)

    Argo, Jeffrey W.; Kellogg, Jeffrey W.; Headley, Daniel Ignacio; Stoltzfus, Brian Scott; Waugh, Caleb J.; Lewis, Sean M.; Porter, John Larry, Jr.; Wisher, Matthew; Struve, Kenneth William; Savage, Mark Edward; Quevedo, Hernan J.; Bengtson, Roger

    2011-11-01

    Two versions of a current driver for single-turn, single-use 1-cm diameter magnetic field coils have been built and tested at the Sandia National Laboratories for use with cluster fusion experiments at the University of Texas in Austin. These coils are used to provide axial magnetic fields to slow radial loss of electrons from laser-produced deuterium plasmas. Typical peak field strength achievable for the two-capacitor system is 50 T, and 200 T for the ten-capacitor system. Current rise time for both systems is about 1.7 {mu}s, with peak current of 500 kA and 2 MA, respectively. Because the coil must be brought to the laser, the driver needs to be portable and drive currents in vacuum. The drivers are complete but laser-plasma experiments are still in progress. Therefore, in this report, we focus on system design, initial tests, and performance characteristics of the two-capacitor and ten-capacitors systems. The questions of whether a 200 T magnetic field can retard the breakup of a cluster-fusion plasma, and whether this field can enhance neutron production have not yet been answered. However, tools have been developed that will enable producing the magnetic fields needed to answer these questions. These are a two-capacitor, 400-kA system that was delivered to the University of Texas in 2010, and a 2-MA ten-capacitor system delivered this year. The first system allowed initial testing, and the second system will be able to produce the 200 T magnetic fields needed for cluster fusion experiments with a petawatt laser. The prototype 400-kA magnetic field driver system was designed and built to test the design concept for the system, and to verify that a portable driver system could be built that delivers current to a magnetic field coil in vacuum. This system was built copying a design from a fixed-facility, high-field machine at LANL, but made to be portable and to use a Z-machine-like vacuum insulator and vacuum transmission line. This system was sent to the

  19. Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP

    DEFF Research Database (Denmark)

    Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

    2010-01-01

    A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane...... as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy....... Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing...

  20. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  1. Current—voltage characteristics of lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composites

    International Nuclear Information System (INIS)

    De-An, Pan; Shen-Gen, Zhang; Jian-Jun, Tian; Li-Jie, Qiao; Jun-Sai, Sun; Volinsky, Alex A.

    2010-01-01

    Current–voltage measurements obtained from lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composite showed that a sinusoidal current applied to the copper coil wrapped around the hollow cylinder circumference induces voltage across the lead zirconate titanate layer thickness. The current–voltage coefficient and the maximum induced voltage in lead zirconate titanate at 1 kHz and resonance (60.1 kHz) frequencies increased linearly with the number of the coil turns and the applied current. The resonance frequency corresponds to the electromechanical resonance frequency. The current–voltage coefficient can be significantly improved by optimizing the magnetoelectric structure geometry and/or increasing the number of coil turns. Hollow cylindrical lead zirconate titanate/nickel structures can be potentially used as current sensors. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

    Science.gov (United States)

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-11-17

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

  3. Turning on gravity with the Higgs mechanism

    International Nuclear Information System (INIS)

    Alexander, Stephon; Barrow, John D; Magueijo, João

    2016-01-01

    We investigate how a Higgs mechanism could be responsible for the emergence of gravity in extensions of Einstein theory, with a suitable low energy limit. In this scenario, at high energies, symmetry restoration could ‘turn off’ gravity, with dramatic implications for cosmology and quantum gravity. The sense in which gravity is muted depends on the details of the implementation. In the most extreme case gravity’s dynamical degrees of freedom would only be unleashed after the Higgs field acquires a non-trivial vacuum expectation value, with gravity reduced to a topological field theory in the symmetric phase. We might also identify the Higgs and the Brans–Dicke fields in such a way that in the unbroken phase Newton’s constant vanishes, decoupling matter and gravity. We discuss the broad implications of these scenarios. (letter)

  4. Voltage tensor for a plasma in high frequency electromagnetic and constant electric fields in the presence of collisions

    International Nuclear Information System (INIS)

    Vigdorchik, N.E.

    1978-01-01

    The voltage tensor expression is obtained for plasma placed in a HF electromagnetic and constant electric fields. The kinetic equations with allowance for collisions are initial. Weakly ionized and completely ionized plasmas are considered. The voltage tensor for completely ionized plasma differs essentially from that for transparent media

  5. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  6. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; hide

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  7. Field emission response from multi-walled carbon nanotubes grown on electrochemically engineered copper foil

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Amit Kumar; Jain, Vaibhav [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Saini, Krishna [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Lahiri, Indranil, E-mail: indrafmt@iitr.ac.in [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India)

    2017-02-01

    Exciting properties of carbon nanotube has proven it to be a promising candidate for field emission applications, if its processing cost can be reduced effectively. In this research, a new electrochemical technique is proposed for growing carbon nanotubes in selective areas by thermal chemical vapour deposition. In this process, electrochemical processing is used to create localized pits and deposition of catalysts, which act as roots to support growth and alignment of the CNTs on copper substrate. CNTs grown thus were characterized and studied using scanning electron microscope, transmission electron microscope and Raman spectroscopy, elucidating presence of multiwall carbon nanotubes (MWCNT). These CNT emitters have comparatively lower turn-on field and higher field enhancement factor. - Highlights: • Electrochemical pitting for localized carbon nanotube growth is proposed. • Electrochemical pitting method shows patterning effect on the substrate. • Size and density of pits depend on voltage, pH and temperature. • CNTs thus grown shows good field emission response.

  8. The Philosophy of Turning Points

    DEFF Research Database (Denmark)

    Turcan, Romeo V.

    2013-01-01

    business and management field, the turning point is seen as a valuable unit of analysis within the research field. It is expected that this paper will encourage a dynamic scholarly conversation about the concept of turning point and how it can aid international business researchers in the development...

  9. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Zemliakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Nezhenzev, A. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Medvedev, G. V. [JSC RPE Salut (Russian Federation)

    2016-12-15

    The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  10. Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

    Science.gov (United States)

    Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

    2014-12-01

    We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

  11. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  12. High Power Efficiency Solution-Processed Blue Phosphorescent Organic Light-Emitting Diodes Using Exciplex-Type Host with a Turn-on Voltage Approaching the Theoretical Limit.

    Science.gov (United States)

    Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Ye, Shanghui; Yang, Min; Jiang, Wei

    2015-11-18

    Three solution-processable exciplex-type host materials were successfully designed and characterized by equal molar blending hole transporting molecules with a newly synthesized electron transporting material, which possesses high thermal stability and good film-forming ability through a spin-coating technique. The excited-state dynamics and the structure-property relationships were systematically investigated. By gradually deepening the highest occupied molecular orbital (HOMO) level of electron-donating components, the triplet energy of exciplex hosts were increased from 2.64 to 3.10 eV. Low temperature phosphorescence spectra demonstrated that the excessively high triplet energy of exciplex would induce a serious energy leakage from the complex state to the constituting molecule. Furthermore, the low energy electromer state, which only exists under the electroexcitation, was found as another possible channel for energy loss in exciplex-based phosphorescent organic light-emitting diodes (OLEDs). In particular, as quenching of the exciplex-state and the triplet exciton were largely eliminated, solution-processed blue phosphorescence OLEDs using the exciplex-type host achieved an extremely low turn-on voltage of 2.7 eV and record-high power efficiency of 22.5 lm W(-1), which were among the highest values in the devices with identical structure.

  13. An interim report on the materials and selection criteria analysis for the Compact Ignition Tokamak Toroidal Field Coil Turn-to-Turn Insulation System

    International Nuclear Information System (INIS)

    Campbell, V.W.; Dooley, J.B.; Hubrig, J.G.; Janke, C.J.; McManamy, T.J.; Welch, D.E.

    1990-01-01

    Design criteria for the Compact Ignition Tokamak, Toroidal-Field (TF) Coil, Turn-to-Turn Insulation System require an insulation sheet and bonding system that will survive cryogenic cycling in a radiation environment and maintain structural integrity during exposure to the significant compressive and shear loads associated with each operating cycle. For thermosetting resin systems, a complex interactive dependency exists between optimum peak value, in-service property performance capabilities of candidate generic materials; key handling and processing parameters required to achieve their optimum in-service property performance as an insulation system; and suitability of their handling and processing parameters as a function of design configuration and assembly methodology. This dependency is assessed in a weighted study matrix in which two principal programmatic approaches for the development of the TF Coil Subassembly Insulation System have been identified. From this matrix study, two viable approaches to the fabrication of the insulation sheet were identified: use of a press-formed sheet bonded in place with epoxy for mechanical bonding and tolerance take-up and formation of the insulation sheet by placement of dry cloth and subsequent vacuum pressure impregnation. Laboratory testing was conducted to screen a number of combinations of resins and hardeners on a generic basis. These combinations were chosen for their performance in similar applications. Specimens were tested to screen viscosity, thermal-shock tolerance, and cryogenic tolerance. Cryogenic shock and cryogenic temperature proved to be extremely lethal to many combinations of resin, hardener, and cure. Two combinations survived: a heavily flexibilized bisphenol A resin with a flexibilized amine hardener and a bisphenol A resin with cycloaliphatic amine hardener. 7 refs., 12 figs., 6 tabs

  14. Studies of radiation blistering effects on voltage holding

    International Nuclear Information System (INIS)

    Miley, G.H.

    1975-01-01

    The surfaces of niobium and tungsten wires were blistered by 300-keV helium-ion irradiation and then tested for voltage holding. A cylindrical projection-tube technique was employed so that regions of strong electron emission could be observed and later examined with a scanning electron microscope (SEM). Blistering was found to cause significant increases in pre-breakdown currents. However, these currents tend to saturate over a region corresponding to around 200-400 kV/cm surface field such that the ultimate voltage breakdown limit is not seriously reduced. Emission image observations and SEM photographs suggest that, in many cases, parts of the blistered surface are gradually erected by the strong surface fields, but this may not occur until after several arc breakdowns. SEM photographs also indicate that vapor from the anode may play an important part in the breakdown mechanism. Implications of these results to the design of devices important to fusion development, such as direct collectors and ion sources, are briefly discussed. The importance of future in situ irradiation-voltage experiments is also stressed. (U.S.)

  15. Solution Processable Electrochemiluminescent Ion Gels for Flexible, Low Voltage, Emissive Displays on Plastic

    Science.gov (United States)

    Moon, Hong Chul; Lodge, Timothy P.; Frisbie, C. Daniel

    2014-03-01

    We have expanded the functionality of ion gels and successfully demonstrated low voltage, flexible electrochemiluminescent (ECL) devices using patterned ECL gels. An ECL device composed of only an emissive gel and two electrodes was fabricated on an ITO-coated substrate by solution casting the ECL gel and brush-painting the top silver electrode. The device turned on at an AC voltage as low as 2.6 V (-1.3 V ~ +1.3 V) and showed a relatively rapid response (sub-ms). Also, we varied the mechanical properties of the ECL gel simply by substituting polystyrene-block-poly(methyl methacrylate)-block-polystyrene (SMS) with commercially available poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-co-HFP)), enabling the fabrication of flexible ECL devices on any target substrate by the ``cut-and-stick'' strategy. This simple, rubbery ECL gel should be attractive for flexible electronics applications such as displays on packaging.

  16. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    International Nuclear Information System (INIS)

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  17. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Influence of current limitation on voltage stability with voltage sourced converter HVDC

    DEFF Research Database (Denmark)

    Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

    2013-01-01

    A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

  19. Square-Wave Voltage Injection Algorithm for PMSM Position Sensorless Control With High Robustness to Voltage Errors

    DEFF Research Database (Denmark)

    Ni, Ronggang; Xu, Dianguo; Blaabjerg, Frede

    2017-01-01

    relationship with the magnetic field distortion. Position estimation errors caused by higher order harmonic inductances and voltage harmonics generated by the SVPWM are also discussed. Both simulations and experiments are carried out based on a commercial PMSM to verify the superiority of the proposed method......Rotor position estimated with high-frequency (HF) voltage injection methods can be distorted by voltage errors due to inverter nonlinearities, motor resistance, and rotational voltage drops, etc. This paper proposes an improved HF square-wave voltage injection algorithm, which is robust to voltage...... errors without any compensations meanwhile has less fluctuation in the position estimation error. The average position estimation error is investigated based on the analysis of phase harmonic inductances, and deduced in the form of the phase shift of the second-order harmonic inductances to derive its...

  20. High-voltage engineering and testing

    CERN Document Server

    Ryan, Hugh M

    2013-01-01

    This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

  1. Constraints on voltage sensor movement in the shaker K+ channel.

    Science.gov (United States)

    Darman, Rachel B; Ivy, Allison A; Ketty, Vina; Blaustein, Robert O

    2006-12-01

    In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12-14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K(+) channel KvAP, a "voltage-sensor paddle" comprising a helix-turn-helix of S3-S4 translocates approximately 20 A through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33-41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42-48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463-475). We used two methods to test for analogous motions in the Shaker K(+) channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309-311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483-7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158-161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues against

  2. Influence of the voltage polarity on the properties of a nanosecond surface barrier discharge in atmospheric-pressure air

    International Nuclear Information System (INIS)

    Nudnova, M. M.; Aleksandrov, N. L.; Starikovskii, A. Yu.

    2010-01-01

    The properties of a surface barrier discharge in atmospheric-pressure air at different polarities of applied voltage were studied experimentally. The influence of the voltage polarity on the spatial structure of the discharge and the electric field in the discharge plasma was determined by means of spectroscopic measurements. It is found that the energy deposited in the discharge does not depend on the voltage polarity and that discharges of positive polarity are more homogenous and the electric fields in them are higher.

  3. Effect of inductance between middle and outer cylinders on diode voltage of pulse forming line

    International Nuclear Information System (INIS)

    Liu Jinliang; Wang Xinxin

    2008-01-01

    Based on the experimental device of the water spiral pulse forming line(PFL) type electron beam accelerator, the effect of inductance between the middle and outer cylinders of PFL on diode voltage is theoretically and experimentally studied in this paper. The formulae are introduced, with which the effect of inductance on diode voltage is calculated. In addition, the diode voltage waveform is simulated through the Pspice software. The theoretical and simulated results agree well with the experimental results, which show that large inductance between middle and outer cylinders can shorten the waveform flat part of diode voltage, increase waveform rise time and reduce the diode peak voltage. When the inductance is smaller than 200 nH, a nearly square voltage waveform can be obtained in field-emission diode. (authors)

  4. Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

    Science.gov (United States)

    Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

    2018-05-01

    The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

  5. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  6. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  7. Effect of saturating ferrite on the field in a prototype kicker magnet

    International Nuclear Information System (INIS)

    Barnes, M.J.; Wait, G.D.

    1994-06-01

    The field rise for kicker magnets is often specified between 1% and 99% of full strength. Three-gap thyratrons are frequently used as switches for kicker magnet systems. These thyratrons turn on in three stages: the collapse of voltage across one gap causes a displacement current to flow in the parasitic capacitance of off-state gap(s). The displacement current flows in the external circuit and can thus increase the effective rise-time of the field in the kicker magnet. One promising method of decreasing the effect of the displacement current involves the use of saturating ferrites. Another method for achieving the specified rise-time and 'flatness' for the kick strength is to utilize speed-up networks in the electrical circuit. Measurements have been carried out on a prototype kicker magnet with a speed-up network and various geometries of saturating ferrite. Measurements and PSpice calculations are presented. (author)

  8. PLZT light transmittance memory driven with an asymmetric voltage pulse

    International Nuclear Information System (INIS)

    Inoue, Kazuhiko; Morita, Takeshi

    2010-01-01

    PLZT is a ferroelectric electro-optic material, which has been operated with a constant voltage supply to keep a certain optical property. In this study, we propose an optical transmittance memory effect by controlling the domain conditions. The keypoint is to use an asymmetric voltage pulse. In the positive direction, a sufficiently-large voltage is applied to align the polarization directions. After this operation, a relatively small light transmittance is memorized even after removing the electric field. On the other hand, in the negative direction, the amplitude of the voltage is adjusted to the coercive electric field. In this condition, the domain structure is almost the same as the depolarization state. With this voltage supply, the maximum light transmittance can be kept after removing the electric field. Using these voltage operations, the PLZT can obtain two light transmittance states depending on the domain structure. This memory effect should be useful for innovative optical scanners or shutters in the future.

  9. Symmetric voltage-controlled variable resistance

    Science.gov (United States)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  10. Thermal voltage noise in layered superconductors

    International Nuclear Information System (INIS)

    Ashkenazy, V.D.; Jung, G.; Shapiro, B.Y.

    1995-01-01

    Thermal voltage noise in the mixed state of type-II superconductors has been calculated taking into account fluctuation modes of nonrigid vortices. It has been shown that bending of vortices leads to new effects in thermal-voltage-noise spectra at high frequencies. The power spectrum reflecting fluctuations of rigid vortices is suppressed at very low frequencies and saturates into a white spectrum at a characteristic frequency depending on the strip width. At high frequencies tilt modes of flexible vortices start to contribute to the fluctuating voltages and the power spectrum undergoes three subsequent magnitude increases, following ω 1/2 -, ω 2 -, and again ω 1/2 -like behavior before becoming white again. It has been shown that for layered superconductors of a moderate anisotropy the second ω 1/2 -like increase disappears at magnetic fields exceeding a certain threshold field corresponding to the crossover field between two-dimensional and three-dimensional vortex-lattice melting. Field dependencies of characteristic frequencies separating different regimes of spectral behavior have been evaluated and shown to be qualitatively different for low and high magnetic fields

  11. A Novel Index for Online Voltage Stability Assessment Based on Correlation Characteristic of Voltage Profiles

    Directory of Open Access Journals (Sweden)

    M. R. Aghamohammadi

    2011-06-01

    Full Text Available Abstract: Voltage instability is a major threat for security of power systems. Preserving voltage security margin at a certain limit is a vital requirement for today’s power systems. Assessment of voltage security margin is a challenging task demanding sophisticated indices. In this paper, for the purpose of on line voltage security assessment a new index based on the correlation characteristic of network voltage profile is proposed. Voltage profile comprising all bus voltages contains the effect of network structure, load-generation patterns and reactive power compensation on the system behaviour and voltage security margin. Therefore, the proposed index is capable to clearly reveal the effect of system characteristics and events on the voltage security margin. The most attractive feature for this index is its fast and easy calculation from synchronously measured voltage profile without any need to system modelling and simulation and without any dependency on network size. At any instant of system operation by merely measuring network voltage profile and no further simulation calculation this index could be evaluated with respect to a specific reference profile. The results show that the behaviour of this index with respect to the change in system security is independent of the selected reference profile. The simplicity and easy calculation make this index very suitable for on line application. The proposed approach has been demonstrated on IEEE 39 bus test system with promising results showing its effectiveness and applicability.

  12. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  13. Dragon-I injector based on the induction voltage adder technique

    Directory of Open Access Journals (Sweden)

    Zhang Kaizhi

    2006-08-01

    Full Text Available The Dragon-I injector based on the induction voltage adder technique is introduced. Twelve ferrite loaded induction cells are connected in a series through central conducting stalks to achieve a pulsed voltage higher than 3.5 MV across the diode. Electrons are extracted from the velvet emitter and guided through the anode pipe by the magnets placed inside the cathode and anode shrouds. Measurements at the exit of injector show that, with an electric field of 200  kV/cm near the velvet surface and suitable magnetic field distribution, an electron beam up to 2.8 kA can be obtained with a normalized emittance of 1040π   mm mrad, and energy spread of 2.1% (3σ around the central energy of 3.5 MeV.

  14. Ion peak narrowing by applying additional AC voltage (ripple voltage) to FAIMS extractor electrode.

    Science.gov (United States)

    Pervukhin, Viktor V; Sheven, Dmitriy G

    2010-01-01

    The use of a non-uniform electric field in a high-field asymmetric waveform ion mobility spectrometry (FAIMS) analyzer increases sensitivity but decreases resolution. The application of an additional AC voltage to the extractor electrode ("ripple" voltage, U(ripple)) can overcome this effect, which decreases the FAIMS peak width. In this approach, the diffusion ion loss remains minimal in the non-uniform electric field in the cylindrical part of the device, and all ion losses under U(ripple) occur in a short portion of their path. Application of the ripple voltage to the extractor electrode is twice as efficient as the applying of U(ripple) along the total length of the device. 2010 American Society for Mass Spectrometry. Published by Elsevier Inc. All rights reserved.

  15. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  16. Congestion management considering voltage security of power systems

    International Nuclear Information System (INIS)

    Esmaili, Masoud; Shayanfar, Heidar Ali; Amjady, Nima

    2009-01-01

    Congestion in a power network is turned up due to system operating limits. To relieve congestion in a deregulated power market, the system operator pays to market participants, GENCOs and DISCOs, to alter their active powers considering their bids. After performing congestion management, the network may be operated with a low security level because of hitting some flows their upper limit and some voltages their lower limit. In this paper, a novel congestion management method based on the voltage stability margin sensitivities is introduced. Using the proposed method, the system operator so alleviates the congestion that the network can more retain its security. The proposed method not only makes the system more secure after congestion management than other methods already presented for this purpose but also its cost of providing security is lower than the earlier methods. Test results of the proposed method along with the earlier ones on the New-England test system elaborate the efficiency of the proposed method from the viewpoint of providing a better voltage stability margin and voltage profile as well as a lower security cost. (author)

  17. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  18. Field emission study of MWCNT/conducting polymer nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: maalvee@yahoo.co.in [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Al-Ghamdi, A.A. [Department of Physics, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Husain, M. [Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2014-12-01

    MWCNTs/Polypyrrole nanocomposites were synthesized by solution mixing method. These synthesized nanocomposites were studied carefully by Raman Spectroscopy and Scanning Electron Microscopy measurements. The field emission study of MWCNTs/Polypyrrole nanocomposites were performed in diode arrangement under vacuum of the order of 10{sup −5} Torr. The emission current under exploration depends on applied voltage. The prepared nanocomposites depict low turn-on field at 1.4 V/μm that reaches to a maximum emission current density 0.020 mA/cm{sup 2} at 2.4 V/µm, which is calculated from the graph of current density (J) against the applied electric field (E) and from Fowler–Nordheim (F–N) plot.

  19. Primordial spectra from sudden turning trajectory

    Science.gov (United States)

    Noumi, Toshifumi; Yamaguchi, Masahide

    2013-12-01

    Effects of heavy fields on primordial spectra of curvature perturbations are discussed in inflationary models with a sudden turning trajectory. When heavy fields are excited after the sudden turn and oscillate around the bottom of the potential, the following two effects are generically induced: deformation of the inflationary background spacetime and conversion interactions between adiabatic and isocurvature perturbations, both of which can affect the primordial density perturbations. In this paper, we calculate primordial spectra in inflationary models with sudden turning potentials taking into account both of the two effects appropriately. We find that there are some non-trivial correlations between the two effects in the power spectrum and, as a consequence, the primordial scalar power spectrum has a peak around the scale exiting the horizon at the turn. Though both effects can induce parametric resonance amplifications, they are shown to be canceled out for the case with the canonical kinetic terms. The peak feature and the scale dependence of bispectra are also discussed.

  20. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  1. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    International Nuclear Information System (INIS)

    Povzner, A.A.; Volkov, A.G.

    2017-01-01

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  2. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

    2017-06-15

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  3. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-09-07

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

  4. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  5. Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

    Science.gov (United States)

    Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

    2010-11-01

    A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

  6. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  7. A mathematical model of a three-gap thyratron simulating turn-on

    International Nuclear Information System (INIS)

    Barnes, M. J.; Wait, G.D.

    1993-06-01

    Kicker magnets are required for all ring-to-ring transfers in the 5 rings of the proposed KAON factory synchrotron. The kick must rise/fall from 1% to 99% of full strength during the time interval of gaps created in the beam (80 ns to 160 ns) so that the beam can be extracted with minimum losses. Approximately one-third of the injection and extraction kicker magnets will operate continuously at a rate of 50 pulses per second: the others operate at 10 pulses per second. The kicker magnet PFN voltages will be in the range 50kV to 80kV, hence multi-gap thyratrons will be used for the injection and extraction kicker systems. Displacement current arising from turn-on of a multi-gap thyratron flows in the external circuit and can thus increase the effective rise-time of the kick. A mathematical model of a three-gap thyratron, which includes the drift spaces, has been developed for simulating turn-on, and is described in this paper. The thyratron model has been used to investigate ways to suppress the effects of displacement current on the kick, and to reduce thyratron switching loss. A ferrite saturating inductor may be connected adjacent to each thyratron to reduce switching loss, so that thyratron life can be extended and the kick rise-time improved. This inductor can also be used to reduce the effect of anode displacement current during turn-on of a multi-gap thyratron. The research has culminated in a predicted kick rise time (1% to 99%) of less than 50 ns for a TRIUMF 10 cell prototype kicker magnet. The proposed improvements are currently being implemented on our prototype kicker system. (author). 15 refs., 11 figs

  8. Functional diversity of potassium channel voltage-sensing domains.

    Science.gov (United States)

    Islas, León D

    2016-01-01

    Voltage-gated potassium channels or Kv's are membrane proteins with fundamental physiological roles. They are composed of 2 main functional protein domains, the pore domain, which regulates ion permeation, and the voltage-sensing domain, which is in charge of sensing voltage and undergoing a conformational change that is later transduced into pore opening. The voltage-sensing domain or VSD is a highly conserved structural motif found in all voltage-gated ion channels and can also exist as an independent feature, giving rise to voltage sensitive enzymes and also sustaining proton fluxes in proton-permeable channels. In spite of the structural conservation of VSDs in potassium channels, there are several differences in the details of VSD function found across variants of Kvs. These differences are mainly reflected in variations in the electrostatic energy needed to open different potassium channels. In turn, the differences in detailed VSD functioning among voltage-gated potassium channels might have physiological consequences that have not been explored and which might reflect evolutionary adaptations to the different roles played by Kv channels in cell physiology.

  9. Voltage spike detection in high field superconducting accelerator magnets

    Energy Technology Data Exchange (ETDEWEB)

    Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.; /Fermilab

    2004-12-01

    A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are {approx}15mV in magnitude and lasts for {approx}30 {micro}sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb{sub 3}Sn magnets at currents up to {approx}20KA will also be shown.

  10. Voltage spike detection in high field superconducting accelerator magnets

    International Nuclear Information System (INIS)

    Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.

    2004-01-01

    A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are ∼15mV in magnitude and lasts for ∼30(micro)sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb3Sn magnets at currents up to ∼20KA will also be shown

  11. Effect of gold nano-particles on switch-on voltage and relaxation frequency of nematic liquid crystal cell

    Directory of Open Access Journals (Sweden)

    M. Inam

    2011-12-01

    Full Text Available We report the observation of large changes in the electro-optical properties of nematic liquid crystal (NLC due to inclusion of small concentration of 10 nm diameter gold nanoparticles (GNPs. It is observed that GNPs lower switch-on voltage and also lower the relaxation frequency with applied voltage (AC field to NLC cell. These studies of GNP doped NLC cell have been done using optical interferometry and capacity measurement by impedance analyzer. The change in threshold voltage and relaxation frequency by doping GNPs in NLC is explained theoretically.

  12. A Low-input-voltage Wireless Power Transfer for Biomedical Implants

    DEFF Research Database (Denmark)

    Jiang, Hao; Bai, Kangjun; Zhu, Weijie

    2015-01-01

    Wireless power transfer is an essential technology to increase implants' longevity. A pair of inductivelycoupled coils operating at radio-frequency is extensively used to deliver electrical power to implants wirelessly. In this system, a power conditioning circuit is required convert the induced...... in the rectifier for the efficient AC to DC conversion. This requirement results in larger coil size, shorter operating distance or more stringent geometrical alignment between the two coils. In this paper, a low-input-voltage wireless power transfer has been demonstrated. In this system, the opencircuit voltage...... time-varying AC power harvested by the receiving coil to a stable DC power that is needed for powering circuits and sensors. Most existing power conditioning circuits require the induced voltage of the receiving coil to be significantly higher than the turn-on voltage of the diodes used...

  13. A Study on Gas Insulation Characteristics for Design Optimization of High Voltage Power Apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kim, I S; Kim, M K; Seo, K S; Moon, I W; Choi, C K [Korea Electrotechnology Research Institute (Korea, Republic of)

    1996-12-01

    This study aim of obtaining the basic data for gas insulation in the high voltage apparatus and for investigating the breakdown characteristics in uniform field and non-uniform which the geometric construction in the practical power apparatus. In this study, the research results on the insulation technology published earlier are reviewed and the basic data for an optimum design of a high voltage apparatus are obtained thorough the experiment and computer simulation by using a uniform field. The main result are summarized as follows: (A) Investigation on the insulation technology in a large-capacity power apparatus. (B) Investigation on the breakdown characteristics in particle contaminated condition. (C) Investigation on the design in computer simulation. (D) Investigation on the simulation technology of breakdown characteristics. (E) Investigation on breakdown characteristics in the nonuniform field and experiment. (author). refs., figs., tabs.

  14. On-Line Detection of Coil Inter-Turn Short Circuit Faults in Dual-Redundancy Permanent Magnet Synchronous Motors

    Directory of Open Access Journals (Sweden)

    Yiguang Chen

    2018-03-01

    Full Text Available In the aerospace and military fields, with high reliability requirements, the dual-redundancy permanent magnet synchronous motor (DRPMSM with weak thermal coupling and no electromagnetic coupling is needed. A common fault in the DRPMSM is the inter-turn short circuit fault (ISCF. However, research on how to diagnose ISCF and the set of faulty windings in the DRPMSM is lacking. In this paper, the structure of the DRPMSM is analyzed and mathematical models of the motor under normal and faulty conditions are established. Then an on-line ISCF detection scheme, which depends on the running modes of the DRPMSM and the average values for the difference of the d-axis voltages between two sets of windings in the latest 20 sampling periods, is proposed. The main contributions of this paper are to analyze the calculation for the inductance of each part of the stator windings and propose the on-line diagnosis method of the ISCF under various operating conditions. The simulation and experimental results show that the proposed method can quickly and effectively diagnose ISCF and determine the set of faulty windings of the DRPMSM.

  15. Investigations into the locomotor activity of white rats under the effect of 50 Hz high voltage fields

    Energy Technology Data Exchange (ETDEWEB)

    Hilmer, H.; Tembrock, G.

    1970-07-01

    Tests were carried out on white rats to determine the effect of high-voltage 50 Hz ac electric fields on their locomotor activity. Short-term tests showed that, when they were able to choose between a box not subjected to a field (or subjected to a light field) and one exposed to the field, they stayed for only 27% of the time in the "field box". In the long-term tests, when exposed to the field for three hours, the principal activity peak which occurred during the last hour of the test period was shifted by one hour. Exposure to the field resulted in a change in the ratio between activity during darkness and that during periods of light. It seems probable that this ratio, as well as the daily activity pattern, will be subject to certain afer-effects of an exposure to the field lasting several weeks. 13 refs., 2 figs.

  16. Radio frequency sheaths in an oblique magnetic field

    International Nuclear Information System (INIS)

    Myra, J. R.; D'Ippolito, D. A.

    2015-01-01

    The physics of radio-frequency (rf) sheaths near a conducting surface is studied for plasmas immersed in a magnetic field that makes an oblique angle θ with the surface. A set of one-dimensional equations is developed that describes the dynamics of the time-dependent magnetic presheath and non-neutral Debye sheath. The model employs Maxwell-Boltzmann electrons, and the magnetization and mobility of the ions is determined by the magnetic field strength, and wave frequency, respectively. The angle θ, assumed to be large enough to insure an electron-poor sheath, is otherwise arbitrary. Concentrating on the ion-cyclotron range of frequencies, the equations are solved numerically to obtain the rectified (dc) voltage, the rf voltage across the sheath, and the rf current flowing through the sheath. As an application of this model, the sheath voltage-current relation is used to obtain the rf sheath impedance, which in turn gives an rf sheath boundary condition for the electric field at the sheath-plasma interface that can be used in rf wave codes. In general, the impedance has both resistive and capacitive contributions, and generalizes previous sheath boundary condition models. The resistive part contributes to parasitic power dissipation at the wall

  17. High-field quench behavior and dependence of hot spot temperature on quench detection voltage threshold in a Bi2Sr2CaCu2Ox coil

    International Nuclear Information System (INIS)

    Shen, Tengming; Ye, Liyang; Turrioni, Daniele; Li, Pei

    2015-01-01

    Small insert solenoids have been built using a multifilamentary Ag/Bi 2 Sr 2 CaCu 2 O x round wire insulated with a mullite sleeve (∼100 μm in thickness) and characterized in background fields to explore the quench behaviors and limits of Bi 2 Sr 2 CaCu 2 O x superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltage should be greater than 50 mV in order not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increased from ∼40–∼80 K while increasing the operating wire current density J o from 89 A mm −2 to 354 A mm −2 , whereas for the voltage to reach 1 V, it increased from ∼60–∼140 K. This shows the increasing negative impact of slow normal zone propagation on quench detection with increasing J o and the need to limit the quench detection voltage to <1 V. These measurements, coupled with an analytical quench model, were used to assess the impact of the maximum allowable detection voltage and temperature upon quench detection on the quench protection, assuming a limit of the hot spot temperature to <300 K. (paper)

  18. Low voltage varistor ceramics based on SnO2

    Indian Academy of Sciences (India)

    WINTEC

    School of Environmental and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea. † ... et al (2001) compared the grain boundary barrier proper- ... parameter, EB (breakdown voltage), was taken as the field.

  19. Time-division-multiplex control scheme for voltage multiplier rectifiers

    Directory of Open Access Journals (Sweden)

    Bin-Han Liu

    2017-03-01

    Full Text Available A voltage multiplier rectifier with a novel time-division-multiplexing (TDM control scheme for high step-up converters is proposed in this study. In the proposed TDM control scheme, two full-wave voltage doubler rectifiers can be combined to realise a voltage quadrupler rectifier. The proposed voltage quadrupler rectifier can reduce transformer turn ratio and transformer size for high step-up converters and also reduce voltage stress for the output capacitors and rectifier diodes. An N-times voltage rectifier can be straightforwardly produced by extending the concepts from the proposed TDM control scheme. A phase-shift full-bridge (PSFB converter is adopted in the primary side of the proposed voltage quadrupler rectifier to construct a PSFB quadrupler converter. Experimental results for the PSFB quadrupler converter demonstrate the performance of the proposed TDM control scheme for voltage quadrupler rectifiers. An 8-times voltage rectifier is simulated to determine the validity of extending the proposed TDM control scheme to realise an N-times voltage rectifier. Experimental and simulation results show that the proposed TDM control scheme has great potential to be used in high step-up converters.

  20. Differences between signal currents for both polarities of applied voltages on cavity ionization chambers

    International Nuclear Information System (INIS)

    Takata, N.

    2000-01-01

    It is necessary to obtain precise values of signal currents for the measurement of exposure rates for gamma rays with cavity ionization chambers. Signal currents are usually expected to have the same absolute values for both polarities of applied voltages. In the case of cylindrical cavity ionization chambers, volume recombination loss of ion pairs depends on the polarity of the applied voltage. This is because the values of mobility are different for positive and negative ions. It was found, however, that values of signal currents from a cylindrical ionization chamber change slightly more with a negative than with a positive applied voltage, even after being corrected for volume recombination loss. Moreover, absolute values of saturation currents, which are obtained by extrapolation of correction of initial recombination and diffusion loss, were larger for the negative than for the positive applied voltage. It is known from an experiment with parallel plate ionization chambers that when negative voltage is applied to the repeller electrode, the saturated signal current decreases with an increase in the applied voltage. This is because secondary electrons are accelerated and the stopping power of air for these electrons decreases. When positive voltage is applied, the reverse is true. The effects of acceleration and deceleration of secondary electrons by the electric field thus seem to cause a tendency opposite to the experimental results on the signal currents from cylindrical ionization chambers. The experimental results for the cylindrical ionization chamber can be explained as follows. When negative voltage is applied, secondary electrons are attracted to the central (collecting) electrode. Consequently, the path length of the trajectories of these secondary electrons in the ionization volume increases and signal current increases. The energy gain from the electric field by secondary electrons which stop in the ionization chamber also contributes to the

  1. Experimental study on the influence of radiation on high-voltage insulation gases

    International Nuclear Information System (INIS)

    Fujiwara, Yukio; Inoue, Takashi; Miyamoto, Kenji; Miyamoto, Naoki; Ohara, Yoshihiro; Okumura, Yoshikazu; Watanabe, Kazuhiro

    1999-12-01

    In a neutral beam injection (NBI) system for next generation tokamaks such as International Thermonuclear Experimental Reactor (ITER), insulation gas around a beam source will be irradiated with neutrons and gamma rays from the reactor. It is necessary to evaluate the influence of the radiation on the insulation gas for the engineering design of the ITER-NBI system. In the present paper, the influence of the 60 Co gamma rays on air, SF 6 , C 2 F 6 , CO 2 , and mixing gas of air and SF 6 was studied. Ionization current and voltage-holding characteristics of the gases were measured for an absorbed dose rate of 0.45 Gy/s using parallel disk electrodes whose diameter is 130 mm. Saturation current proved to increase linearly with a gap length between the electrodes, gas pressure, an absorbed dose rate, and molecular weight of the gases. Voltage-holding capability was degraded by about 10 %; the degree of the degradation did not depend on the absorbed dose rate. Dissociative products of SF 6 by the irradiation were also analyzed with a quadrupole mass spectrometer. News peaks that did not exist before irradiation appeared at the m/e of 48, 64, 67, 83, 86, 102, and 105 after irradiation. The amount of the dissociative products turned out to be saturated at a higher absorbed dose. (author)

  2. 4H-SiC gate turn-off (GTO) thyristor development

    Energy Technology Data Exchange (ETDEWEB)

    Casady, J.B.; Agarwal, A.K.; Rowland, L.B.; Siergiej, R.R.; Seshadri, S.; Mani, S.; Sanger, P.A.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States); Barrows, J.; Piccone, D. [Silicon Power Corp., Malvern, PA (United States)

    1998-08-01

    4H-SiC inverted, asymmetrical gate turn-off thyristors (GTOs) were fabricated and characterized over an ambient temperature range of 25 C to 390 C. Device performance was evaluated with respect to forward drop, current density, and blocking voltage. At room temperature, forward blocking voltages of up to 1000 V were achieved in smaller area devices (6.5 x 10{sup -4} cm{sup 2} active area) while larger area devices (3.63 x 10{sup -3} cm{sup 2} active area) could block up to 700 V. Reverse blocking was approximately 50 V for these asymmetrical devices. Current densities were evaluated up to 3500 A/cm{sup 2}, with the forward voltage drop strongly affected by temperature and anode contact resistance. (orig.) 11 refs.

  3. Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

    Science.gov (United States)

    Lin, Bor-Ren

    2018-04-01

    This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

  4. Nanosecond pulsed electric fields depolarize transmembrane potential via voltage-gated K+, Ca2+ and TRPM8 channels in U87 glioblastoma cells.

    Science.gov (United States)

    Burke, Ryan C; Bardet, Sylvia M; Carr, Lynn; Romanenko, Sergii; Arnaud-Cormos, Delia; Leveque, Philippe; O'Connor, Rodney P

    2017-10-01

    Nanosecond pulsed electric fields (nsPEFs) have a variety of applications in the biomedical and biotechnology industries. Cancer treatment has been at the forefront of investigations thus far as nsPEFs permeabilize cellular and intracellular membranes leading to apoptosis and necrosis. nsPEFs may also influence ion channel gating and have the potential to modulate cell physiology without poration of the membrane. This phenomenon was explored using live cell imaging and a sensitive fluorescent probe of transmembrane voltage in the human glioblastoma cell line, U87 MG, known to express a number of voltage-gated ion channels. The specific ion channels involved in the nsPEF response were screened using a membrane potential imaging approach and a combination of pharmacological antagonists and ion substitutions. It was found that a single 10ns pulsed electric field of 34kV/cm depolarizes the transmembrane potential of cells by acting on specific voltage-sensitive ion channels; namely the voltage and Ca2 + gated BK potassium channel, L- and T-type calcium channels, and the TRPM8 transient receptor potential channel. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Effect of AC electric fields on the stabilization of premixed bunsen flames

    KAUST Repository

    Kim, Minkuk

    2011-01-01

    The stabilization characteristics of laminar premixed bunsen flames have been investigated experimentally for stoichiometric methane-air mixture by applying AC voltage to the nozzle with the single-electrode configuration. The detachment velocity either at blowoff or partial-detachment has been measured by varying the applied voltage and frequency of AC. The result showed that the detachment velocity increased with the applied AC electric fields, such that the flame could be nozzle-attached even over five times of the blowoff velocity without having electric fields. There existed four distinct regimes depending on applied AC voltage and frequency. In the low voltage regime, the threshold condition of AC electric fields was identified, below which the effect of electric fields on the detachment velocity is minimal. In the moderate voltage regime, the flame base oscillated with the frequency synchronized to AC frequency and the detachment velocity increased linearly with the applied AC voltage and nonlinearly with the frequency. In the high voltage regime, two different sub-regimes depending on AC frequency were observed. For relatively low frequency, the flame base oscillated with the applied AC frequency together with the half frequency and the variation of the detachment velocity was insensitive to the applied voltage. For relatively high frequency, the stabilization of the flame was significantly affected by the generation of streamers and the detachment velocity decreased with the applied voltage. © 2010 Published by Elsevier Inc. on behalf of The Combustion Institute. All rights reserved.

  6. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  7. Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage

    Science.gov (United States)

    Kita, Koji; Abraham, David W.; Gajek, Martin J.; Worledge, D. C.

    2012-08-01

    We have demonstrated purely electrical manipulation of the magnetic anisotropy of a Co0.6Fe0.2B0.2 film by applying only 8 V across the CoFeB/oxide stack. A clear transition from in-plane to perpendicular anisotropy was observed. The quantitative relationship between interface anisotropy energy and the applied electric-field was determined from the linear voltage dependence of the saturation field. By comparing the dielectric stacks of MgO/Al2O3 and MgO/HfO2/Al2O3, enhanced voltage control was also demonstrated, due to the higher dielectric constant of the HfO2. These results suggest the feasibility of purely electrical control of magnetization with small voltage bias for spintronics applications.

  8. Detailed design of a 13 kA 13 kV dc solid-state turn-off switch

    International Nuclear Information System (INIS)

    Praeg, W.F.

    1985-01-01

    An experimental facility for the study of electromagnetic effects in the First Wall-Blanket-shield (FWBS) systems of fusion reactors has been constructed at Argonne National Laboratory (ANL). In a test volume of 0.76 m 3 , a vertical, pulsed 5 kG dipole field (B -1 ) is perpendicular to a 10 kG solenoid field. Power supplies of 2.75 MW at 550 V dc and 5.5 MW at 550 V dc and a solid-state switch rated at 13 kA and 13 kV (169 MW) control the pulsed magnetic fields. The total stored energy in the coils is 2.6 MJ. This paper describes the design and construction features of the solid-state switching circuit which turns off a dc of 13 kA in approximately 82 μs and holds off voltages of < 13 kV

  9. Dynamic model based on voltage transfer curve for pattern formation in dielectric barrier glow discharge

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ben; He, Feng; Ouyang, Jiting, E-mail: jtouyang@bit.edu.cn [School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Duan, Xiaoxi [Research Center of Laser Fusion, CAEP, Mianyang 621900 (China)

    2015-12-15

    Simulation work is very important for understanding the formation of self-organized discharge patterns. Previous works have witnessed different models derived from other systems for simulation of discharge pattern, but most of these models are complicated and time-consuming. In this paper, we introduce a convenient phenomenological dynamic model based on the basic dynamic process of glow discharge and the voltage transfer curve (VTC) to study the dielectric barrier glow discharge (DBGD) pattern. VTC is an important characteristic of DBGD, which plots the change of wall voltage after a discharge as a function of the initial total gap voltage. In the modeling, the combined effect of the discharge conditions is included in VTC, and the activation-inhibition effect is expressed by a spatial interaction term. Besides, the model reduces the dimensionality of the system by just considering the integration effect of current flow. All these greatly facilitate the construction of this model. Numerical simulations turn out to be in good accordance with our previous fluid modeling and experimental result.

  10. Exploration of genetically encoded voltage indicators based on a chimeric voltage sensing domain

    Directory of Open Access Journals (Sweden)

    Yukiko eMishina

    2014-09-01

    Full Text Available Deciphering how the brain generates cognitive function from patterns of electrical signals is one of the ultimate challenges in neuroscience. To this end, it would be highly desirable to monitor the activities of very large numbers of neurons while an animal engages in complex behaviours. Optical imaging of electrical activity using genetically encoded voltage indicators (GEVIs has the potential to meet this challenge. Currently prevalent GEVIs are based on the voltage-sensitive fluorescent protein (VSFP prototypical design or on the voltage dependent state transitions of microbial opsins.We recently introduced a new VSFP design in which the voltage-sensing domain (VSD is sandwiched between a FRET pair of fluorescent proteins (termed VSFP-Butterflies and also demonstrated a series of chimeric VSD in which portions of the VSD of Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP are substituted by homologous portions of a voltage-gated potassium channel subunit. These chimeric VSD had faster sensing kinetics than that of the native Ci-VSD. Here, we describe a new set of VSFPs that combine chimeric VSD with the Butterfly structure. We show that these chimeric VSFP-Butterflies can report membrane voltage oscillations of up to 200 Hz in cultured cells and report sensory evoked cortical population responses in living mice. This class of GEVIs may be suitable for imaging of brain rhythms in behaving mammalians.

  11. Exploration of genetically encoded voltage indicators based on a chimeric voltage sensing domain.

    Science.gov (United States)

    Mishina, Yukiko; Mutoh, Hiroki; Song, Chenchen; Knöpfel, Thomas

    2014-01-01

    Deciphering how the brain generates cognitive function from patterns of electrical signals is one of the ultimate challenges in neuroscience. To this end, it would be highly desirable to monitor the activities of very large numbers of neurons while an animal engages in complex behaviors. Optical imaging of electrical activity using genetically encoded voltage indicators (GEVIs) has the potential to meet this challenge. Currently prevalent GEVIs are based on the voltage-sensitive fluorescent protein (VSFP) prototypical design or on the voltage-dependent state transitions of microbial opsins. We recently introduced a new VSFP design in which the voltage-sensing domain (VSD) is sandwiched between a fluorescence resonance energy transfer pair of fluorescent proteins (termed VSFP-Butterflies) and also demonstrated a series of chimeric VSD in which portions of the VSD of Ciona intestinalis voltage-sensitive phosphatase are substituted by homologous portions of a voltage-gated potassium channel subunit. These chimeric VSD had faster sensing kinetics than that of the native Ci-VSD. Here, we describe a new set of VSFPs that combine chimeric VSD with the Butterfly structure. We show that these chimeric VSFP-Butterflies can report membrane voltage oscillations of up to 200 Hz in cultured cells and report sensory evoked cortical population responses in living mice. This class of GEVIs may be suitable for imaging of brain rhythms in behaving mammalians.

  12. Urban exposure to ELF magnetic field due to high-, medium- and low-voltage electricity supply networks

    International Nuclear Information System (INIS)

    Bottura, V.; Cappio Borlino, M.; Carta, N.; Cerise, L.; Imperial, E.

    2009-01-01

    The regional environment protection agency (ARPA) of the Aosta Valley region in north Italy performed a survey of magnetic field triggered by the power supply network in high, medium and low voltages on the entire area of Aosta town. The electrical distribution system for houses was not however taken into account. The aim of the survey was to evaluate the global population exposure and not simply the assessment of the legal exposure limit compliance. (authors)

  13. Design and Simulation Test of an Open D-Dot Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Yunjie Bai

    2015-09-01

    Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

  14. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  15. Method to minimize the low-frequency neutral-point voltage oscillations with time-offset injection for neutral-point-clamped inverters

    DEFF Research Database (Denmark)

    Choi, Uimin; Lee, Kyo-Beum; Blaabjerg, Frede

    2013-01-01

    This paper proposes a method to reduce the low-frequency neutral-point voltage oscillations. The neutral-point voltage oscillations are considerably reduced by adding a time-offset to the three phase turn-on times. The proper time-offset is simply calculated considering the phase currents and dwell...

  16. Turned on/turned off

    DEFF Research Database (Denmark)

    Petersen, Eva Bendix

    2016-01-01

    position, it attempts to sense into the lived experience of being subject to, and of, turns in social theory. As a whole the paper seeks to work with and allow for multiplicity in tone, focus, researcher positioning, reader positioning, and more, to see what knowledge that does not seek confident closure......Through cacophonic story-telling, emerging from ethnographic observations from academic scenes in Australia and elsewhere, the article seeks to explore the timeliness and untimeliness of feminist knowledge production. Rather than arguing a particular point or making a claim for a particular...

  17. Optimization of a high voltage power supply for a nitrogen laser

    International Nuclear Information System (INIS)

    Baly, L.; Garcia, M.A.; Martin, J.L.

    1997-01-01

    In the present paper the optimization of a high voltage switching power supply for a compact TEA nitrogen laser is described. Taking as criterion the recovering of the charging voltage in a 95% of the maximal voltage, the relationships between the recovering rate coefficient, the recovering time and the maximal repetition frequency were obtained. Using an experimental set-up the power supply optimal values of turns in the primary transformer coil N p= 35 and excitation pulse frequency f exc= 25.5 kHz was determined

  18. Effect of electric field in the characterization of pultruded GFRP boron-free composite insulator for the extra high voltage by the ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fujiwara, Hissae; Silva Junior, Edmilson Jose; Shinohara, Armando Hideki [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Xavier, Gustavo Jose Vasconcelos [CHESF, Recife, PE (Brazil); Costa, Edson Guedes [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Lott Neto, Henrique Batista Duffles Teixeira; Britto, Paulo Roberto Ranzan; Fontan, Marcio A.B. [Sistema de Transmissao do Nordeste S.A., Recife, PE (Brazil)

    2016-07-01

    Full text: The pultruded boron-free glass fiber reinforced polymer (GFRP) composite has been widely used material for the electrical insulators in the high, extra and ultra high voltage overhead lines worldwide. In terms of design, the composite insulator has a highly complex geometry and large size. Aging of materials begin as soon as the insulators start their operation due to the strong electric field, mechanical load due to the weight of conductor cables, environment, corona discharge, generation of acids, and as a result, GFRP can fail mechanically by the stress corrosion crack (SCC) and electrical breakdown known as flashover. In order to mitigate the mechanical and electrical failures, the insulators in the field are frequently monitored by visual inspection, infrared thermography, UV detection, variation of measurement of distribution of electric field variation. However, new technologies for characterization and inspection of the composite insulator in the field are required for reliable operation. Imaging characterization using ionizing radiation (X-ray or g-ray) is an interesting technique, however, it can reduce drastically breakdown voltage due to the Townsend discharge, which free electrons are accelerated by an electric field, collide with gas molecules of air, and free additional electrons resulting in an avalanche multiplication that allows an electrical conduction through the air. In this study, in order to evaluate the potential application of ionization radiation for characterization of composite insulator under electric field, testing were conducted in high voltage laboratory by applying voltages up to 640 kV and varying radiation area of the composite insulator. As a result, even though there was an occurrence of flame on Imaging Plate (IP) detector case when it was located near the phase, corona discharge, but no breakdown discharge (flashover) occurred and high quality imaging of radiography could be obtained when X-ray source was employed

  19. Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

    International Nuclear Information System (INIS)

    Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

    2014-01-01

    The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

  20. The Light Field Attachment: Turning a DSLR into a Light Field Camera Using a Low Budget Camera Ring

    KAUST Repository

    Wang, Yuwang

    2016-11-16

    We propose a concept for a lens attachment that turns a standard DSLR camera and lens into a light field camera. The attachment consists of 8 low-resolution, low-quality side cameras arranged around the central high-quality SLR lens. Unlike most existing light field camera architectures, this design provides a high-quality 2D image mode, while simultaneously enabling a new high-quality light field mode with a large camera baseline but little added weight, cost, or bulk compared with the base DSLR camera. From an algorithmic point of view, the high-quality light field mode is made possible by a new light field super-resolution method that first improves the spatial resolution and image quality of the side cameras and then interpolates additional views as needed. At the heart of this process is a super-resolution method that we call iterative Patch- And Depth-based Synthesis (iPADS), which combines patch-based and depth-based synthesis in a novel fashion. Experimental results obtained for both real captured data and synthetic data confirm that our method achieves substantial improvements in super-resolution for side-view images as well as the high-quality and view-coherent rendering of dense and high-resolution light fields.

  1. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

    Science.gov (United States)

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-12-30

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  2. 76 FR 72203 - Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda

    Science.gov (United States)

    2011-11-22

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda As announced in the Notice of Staff..., from 9 a.m. to 4:30 p.m. to explore the interaction between voltage control, reliability, and economic...

  3. Manitoba Hydro long-term high-voltage transmission line magnetic field monitoring project

    International Nuclear Information System (INIS)

    Wong, P.S.; Ng, C.K.

    2008-01-01

    As part of the licensing process to construct a new 230 kV transmission line on an existing right-of-way in Manitoba, an electrical effects study was conducted in 1998. The study was part of the environmental assessment program crucial in obtaining government approval to construct the line. Some residents living adjacent to the new transmission circuit expressed concerns about alleged adverse health effects associated with long-term exposure to magnetic fields from high voltage transmission lines. In order to verify the accuracy of the predicted magnetic field levels submitted to the regulatory body in the the electrical effects study and to instill confidence in the residents of the affected communities, a three-year magnetic monitoring project was conducted between 2003 and 2005 along the right-of-way after the new 230kV transmission line was energized by Manitoba Hydro. This paper described the monitoring program, with reference to location; equipment; data analysis; and discussion of results. It was concluded that the long-term monitoring project demonstrated that the magnetic field prediction methodology was well understood and accurate, and provided valuable long-term magnetic field characteristics at the edge of the right-of-way. In addition, when there is opposition to a transmission line, public consultation and education were found to be the best options to arrive at a solution. 3 refs., 1 tab., 12 figs

  4. A compact high-voltage pulse generator based on pulse transformer with closed magnetic core.

    Science.gov (United States)

    Zhang, Yu; Liu, Jinliang; Cheng, Xinbing; Bai, Guoqiang; Zhang, Hongbo; Feng, Jiahuai; Liang, Bo

    2010-03-01

    A compact high-voltage nanosecond pulse generator, based on a pulse transformer with a closed magnetic core, is presented in this paper. The pulse generator consists of a miniaturized pulse transformer, a curled parallel strip pulse forming line (PFL), a spark gap, and a matched load. The innovative design is characterized by the compact structure of the transformer and the curled strip PFL. A new structure of transformer windings was designed to keep good insulation and decrease distributed capacitance between turns of windings. A three-copper-strip structure was adopted to avoid asymmetric coupling of the curled strip PFL. When the 31 microF primary capacitor is charged to 2 kV, the pulse transformer can charge the PFL to 165 kV, and the 3.5 ohm matched load can deliver a high-voltage pulse with a duration of 9 ns, amplitude of 84 kV, and rise time of 5.1 ns. When the load is changed to 50 ohms, the output peak voltage of the generator can be 165 kV, the full width at half maximum is 68 ns, and the rise time is 6.5 ns.

  5. Beyond the "Cultural Turn": The Politics of Recognition versus the Politics of Redistribution in the Field of Intercultural Communication

    Science.gov (United States)

    Zotzmann, Karin; Hernández-Zamora, Gregorio

    2013-01-01

    Since the 1980s the field of language teaching and learning has emphasised the interplay between language, culture and identity and promotes both communicative and intercultural competencies. This mirrors a general trend in the social sciences after the so-called "cultural turn" which brought about a concentration on culture, identity…

  6. Understanding voltage-induced localization of nanoparticles at a liquid-liquid interface

    International Nuclear Information System (INIS)

    Flatte, M E; Kornyshev, A A; Urbakh, M

    2008-01-01

    Functionalization of liquid-liquid interfaces is a hot area, driven by aspirations to build self-assembled interfacial structures with unique properties, in particular accessible to light from both sides of the interface. Adsorption of nanoparticles is an example of such functionalization. Interesting new developments take place in electrochemical liquid-liquid systems, consisting of two immiscible electrolytic solutions that form an interface impermeable to ions until a sufficiently high voltage is applied across the interface. The voltage drops across a nanoscale region near the interface due to the formation of two back-to-back electrical double layers on the two sides of the interface. This highly localized voltage drop opens a new possibility for the stabilization and control of interfacial architectures. This appears to be particularly important for metal and even semiconductor nanoparticles, because they are, in turn, 'functionalized'. They are covered by surfactants with acidic groups, some of which dissociate in water. Coverage with surfactants is required to avoid particle-particle agglomeration in the bulk. An electric field can push such nanoparticles to the interface or move them away, depending on the direction of the field. This, together with the change of the free energy of solvation of nanoparticles when they move from the bulk to the surface, are the two new decisive factors affecting their adsorption and desorption. We discuss these effects together with the more familiar ones that are known to determine interfacial localization of uncharged nanoparticles. The presented critical analysis is qualitative. Although we will try to rationalize the main effects by some simplified formulae, they should not be taken literally: they pave the way towards understanding of nanoparticle localization in these systems, rather than give exact answers. These equations will, however, help us to 'visualize' how a properly applied electric field, assisted by the

  7. Molecular mechanism of voltage sensing in voltage-gated proton channels

    Science.gov (United States)

    Rebolledo, Santiago; Perez, Marta E.

    2013-01-01

    Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

  8. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  9. Influence of the applied voltage on the Rapid Chloride Migration (RCM) test

    NARCIS (Netherlands)

    Spiesz, P.R.; Brouwers, H.J.H.

    2012-01-01

    This study addresses the influence of the applied voltage (electrical field) on the value of the chloride migration coefficient, as determined with the Rapid Chloride Migration (RCM) test, and on other properties of cement based mortars. It is shown that in the investigated ranges of applied

  10. Observation of asymmetric transverse voltage in granular high-T c superconductors

    International Nuclear Information System (INIS)

    Luz, M.S. da; Carvalho, F.J.H. de; Santos, C.A.M. dos; Shigue, C.Y.; Machado, A.J.S.; Ricardo da Silva, R.

    2005-01-01

    This work reports the influence of the granularity on the transverse voltage as a function of the temperature, V XY (T), in polycrystalline samples of Bi 2 Sr 2 Ca 0.8 Pr 0.2 Cu 2 O 8+δ composition. It is observed nonzero transverse voltage at zero external magnetic field in the vicinity of the superconducting transition while far away from it, both above and below, no such voltage was detected. Measurements of V XY (T) in both directions of magnetic field allowed to calculate the symmetric and asymmetric transverse voltages in the full range of the applied magnetic field studied (zero up to 9 T). The symmetric transverse voltage as a function of the temperature presents sign reversal of the Hall resistance and positive Hall voltage at normal state such as expected for hole-doped high critical temperature superconductors. On the other hand, the asymmetric component of V XY (T) shows a peak near the superconducting transition which has been recently reported in literature. V XY (T) curves measured in a sample with double superconducting transition, which was confirmed by ac-susceptibility measurements and hysteresis loops of the magneto-resistance, present two peaks in the asymmetric component. These peaks are related to the intergranular and intragranular transitions and can be explained within the framework of Josephson and Abrikosov vortices and anti-vortices motion. By comparing the temperature dependence of the asymmetric transverse voltage and the derivative of longitudinal voltage is possible to observe a specific relation between both transport properties, which is noted to be valid not only at zero applied magnetic field but also under applied field

  11. Lightning Overvoltage on Low-Voltage Distribution System

    Science.gov (United States)

    Michishita, Koji

    The portion of the faults of a medium-voltage line, cause by lightning, tends to increase with often reaching beyond 30%. However, due to the recent progress of the lightning protection design, the number of faults has decreased to 1/3 of that at 30 years ago. As for the low-voltage distribution line, the fault rate has been estimated primarily, although the details of the overvoltages have not been studied yet. For the further development of highly information-oriented society, improvement of reliability of electric power supply to the appliance in a low-voltage customer will be socially expected. Therefore, it is important to establish effective lightning protection design of the low-voltage distribution system, defined to be composed of lines having mutual interaction on the customers' electric circuits, such as a low-voltage distribution line, an antenna line and a telecommunication line. In this report, the author interprets the recent research on the lightning overvoltage on a low-voltage distribution system.

  12. A combined compensation method for the output voltage of an insulated core transformer power supply

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L.; Yang, J., E-mail: jyang@mail.hust.edu.cn; Liu, K. F.; Qin, B.; Chen, D. Z. [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-06-15

    An insulated core transformer (ICT) power supply is an ideal high-voltage generator for irradiation accelerators with energy lower than 3 MeV. However, there is a significant problem that the structure of the segmented cores leads to an increase in the leakage flux and voltage differences between rectifier disks. A high level of consistency in the output of the disks helps to achieve a compact structure by improving the utilization of both the rectifier components and the insulation distances, and consequently increase the output voltage of the power supply. The output voltages of the disks which are far away from the primary coils need to be improved to reduce their inhomogeneity. In this study, by investigating and comparing the existing compensation methods, a new combined compensation method is proposed, which increases the turns on the secondary coils and employs parallel capacitors to improve the consistency of the disks, while covering the entire operating range of the power supply. This method turns out to be both feasible and effective during the development of an ICT power supply. The non-uniformity of the output voltages of the disks is less than 3.5% from no-load to full-load, and the power supply reaches an output specification of 350 kV/60 mA.

  13. Plasmas in saline solutions sustained using rectified ac voltages: polarity and frequency effects on the discharge behaviour

    International Nuclear Information System (INIS)

    Chang Hungwen; Hsu Chengche

    2012-01-01

    In this work, three major problems, namely severe electrode damage, poor plasma stability and excess power consumption, arising in ac-driven plasmas in saline solutions are solved using a rectified power source. Diagnostic studies on the effects of power source polarity and frequency on the plasma behaviour are performed. Examination of I-V characteristics and temporally resolved light emission shows that the polarity significantly influences the current amplitude when the plasma exists, while the frequency alters the bubble dynamics, which in turn affects the plasma ignition voltage. When the plasma is driven by a rectified ac power source, the electrode erosion is reduced substantially. With a low frequency, moderate applied voltage and positively rectified ac power source (e.g. 100 Hz and 350 V), a stable plasma is ignited in nearly every power cycle. (paper)

  14. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    Energy Technology Data Exchange (ETDEWEB)

    Rychetsky, Monir, E-mail: monir.rychetsky@physik.tu-berlin.de; Avinc, Baran; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Koslow, Ingrid; Rass, Jens; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Wild, Johannes; Zweck, Josef [Fakultät für Physik, University of Regensburg, Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel (Germany)

    2016-03-07

    The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

  15. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  16. Passive notch circuit for pulsed-off compression fields

    International Nuclear Information System (INIS)

    Nunnally, W.C.

    1976-06-01

    The operation and simulated results of a passive notch circuit used to pulse off the field in a multiturn, fusion-power system, compression coil are presented. The notch circuit permits initial plasma preparation at field zero, adiabatic compression as the field returns to its initial value, and long field decay time for plasma confinement. The major advantages and disadvantages of the notch circuit are compared with those of a standard capacitor power supply system. The major advantages are that: (1) slow-rising fields can be used for adiabatic compression, (2) solid-state switches can be used because of the inherent current and voltage waveforms, and (3) long field decay times are easier to attain than with single-turn coils

  17. Validation of a Robust Neural Real-Time Voltage Estimator for Active Distribution Grids on Field Data

    DEFF Research Database (Denmark)

    Pertl, Michael; Douglass, Philip James; Heussen, Kai

    2018-01-01

    network approach for voltage estimation in active distribution grids by means of measured data from two feeders of a real low voltage distribution grid. The approach enables a real-time voltage estimation at locations in the distribution grid, where otherwise only non-real-time measurements are available......The installation of measurements in distribution grids enables the development of data driven methods for the power system. However, these methods have to be validated in order to understand the limitations and capabilities for their use. This paper presents a systematic validation of a neural...

  18. Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Himadri; Kataria, Satender [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); Aguirre-Morales, Jorge-Daniel; Fregonese, Sebastien; Zimmer, Thomas [IMS Laboratory, Centre National de la Recherche Scientifique, University of Bordeaux, Talence (France); Passi, Vikram [University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany); Iannazzo, Mario; Alarcon, Eduard [Technical University of Catalonia, Department of Electronics Engineering, UPC, Barcelona (Spain); Lemme, Max C. [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany)

    2017-11-15

    We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  20. The humidity effect on the breakdown voltage characteristics and the transport parameters of air

    International Nuclear Information System (INIS)

    Radmilović-Radjenović, M.; Radjenović, B.; Nikitović, Ž.; Matejčik, Š.; Klas, M.

    2012-01-01

    This paper contains experimental results for the direct current (DC) breakdown voltages and calculated transport parameters for dry, synthetic and ambient air. The breakdown voltage curves for dry, ambient and synthetic air at the gap size of 100μm are very similar. The differences between them are much more pronounced at the interelectrode separation of 20μm, especially at the right hand branch of the breakdown voltage curves. On the other hand, the effective yields γ for dry and synthetic air are in disagreement at lower values of the E/p. Results of calculations based on the Two Term Approximation indicate that the humidity has no a great influence on the transport parameters at all range of the reduce field E/N.

  1. Influence of the magnetic field profile on ITER conductor testing

    International Nuclear Information System (INIS)

    Nijhuis, A; Ilyin, Y; Kate, H H J ten

    2006-01-01

    We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally

  2. Fast Turn-off Mine Transient Electromagnetic Transmitter System

    Directory of Open Access Journals (Sweden)

    ZHENG Xiao-Liang

    2014-05-01

    Full Text Available For solving problems such as short turn-off time, high linear degree of falling edge, measurement of turn-off time and influence of primary signals for transient electromagnetic transmitter, and restrictions because of the environmental conditions of underground coal mine, this thesis aims at designing a new transient electromagnetic transmitter system suitable for coal mine. Supported by damping absorption circuit, such system applies small volume, sectional transmitting coil, with features of short turn-off time, high linear degree of current falling edge. It uses the transmitter monitoring circuit, which accurately measures turn-off time and simultaneously records the current value changes after turn-off, thus to eliminate the influence of primary field as well as to restore earlier secondary field signals for reference and finally to improve the ability to detect the shallow structure. It turns out that the new system has a shorter turn-off time, a higher linear degree of current falling and more accurate data record of turn-off current.

  3. Wind Power Plant Voltage Stability Evaluation: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  4. Design of shielded voltage divider for impulse voltage measurement

    International Nuclear Information System (INIS)

    Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

    1976-01-01

    The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

  5. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  6. Wide Input Range Power Converters Using a Variable Turns Ratio Transformer

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Andersen, Michael A. E.

    2016-01-01

    A new integrated transformer with variable turns ratio is proposed to enable dc-dc converters operating over a wide input voltage range. The integrated transformer employs a new geometry of magnetic core with “four legs”, two primary windings with orthogonal arrangement, and “8” shape connection...... of diagonal secondary windings, in order to make the transformer turns ratio adjustable by controlling the phase between the two current excitations subjected to the two primary windings. Full-bridge boost dc-dc converter is employed with the proposed transformer to demonstrate the feasibility of the variable...

  7. Integrated Three-Voltage-Booster DC-DC Converter to Achieve High Voltage Gain with Leakage-Energy Recycling for PV or Fuel-Cell Power Systems

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2015-09-01

    Full Text Available In this paper, an integrated three-voltage-booster DC-DC (direct current to direct current converter is proposed to achieve high voltage gain for renewable-energy generation systems. The proposed converter integrates three voltage-boosters into one power stage, which is composed of an active switch, a coupled-inductor, five diodes, and five capacitors. As compared with conventional high step-up converters, it has a lower component count. In addition, the features of leakage-energy recycling and switching loss reduction can be accomplished for conversion efficiency improvement. While the active switch is turned off, the converter can inherently clamp the voltage across power switch and suppress voltage spikes. Moreover, the reverse-recovery currents of all diodes can be alleviated by leakage inductance. A 200 W prototype operating at 100 kHz switching frequency with 36 V input and 400 V output is implemented to verify the theoretical analysis and to demonstrate the feasibility of the proposed high step-up DC-DC converter.

  8. Kantian Turning Point in Gadamer's Philosophical Hermeneutics

    Directory of Open Access Journals (Sweden)

    Kristína Bosáková

    2016-11-01

    Full Text Available The paper is treating the theme of a Kantian turning-point in the philosophical hermeneutics of H.- G. Gadamer based on of the harmonic relationship between metaphysics and science in Kantian philosophy from the point of view of the philosophical hermeneutics of Gadamer. The philosophical work of Kant had such an influence on Gadamer that without exaggerating we can talk about the Kantian turning-point in Gadamerian hermeneutics. Grondin, a former student of Gadamer, is talking about Kantian turning-point on the field of aesthetics, but in reality Kantian turning-point means much more than a mere change in the reception of the concept of judgement. It is a discovery of harmonical relationship between the beauty and the moral, between the reason and the sensitivity, between the modern sciences and the metaphysical tradition in the Kantian philosophy, made by Gadamer. This is what we call the Kantian turning-point in Gadamerian hermeneutics.

  9. Rapid formation of electric field profiles in repetitively pulsed high-voltage high-pressure nanosecond discharges

    International Nuclear Information System (INIS)

    Ito, Tsuyohito; Kobayashi, Kazunobu; Hamaguchi, Satoshi; Czarnetzki, Uwe

    2010-01-01

    Rapid formation of electric field profiles has been observed directly for the first time in nanosecond narrow-gap parallel-plate discharges at near-atmospheric pressure. The plasmas examined here are of hydrogen, and the field measurement is based on coherent Raman scattering (CRS) by hydrogen molecules. Combined with the observation of spatio-temporal light emission profiles by a high speed camera, it has been found that the rapid formation of a high-voltage thin cathode sheath is accompanied by fast propagation of an ionization front from a region near the anode. Unlike well-known parallel-plate discharges at low pressure, the discharge formation process at high pressure is almost entirely driven by electron dynamics as ions and neutral species are nearly immobile during the rapid process. (fast track communication)

  10. Voltage spikes in Nb3Sn and NbTi strands

    International Nuclear Information System (INIS)

    Bordini, B.; Ambrosio, G.; Barzi, E.; Carcagno, R.; Feher, S.; Kashikhin, V.V.; Lamm, M.J.; Orris, D.; Tartaglia, M.; Tompkins, J.C.; Turrioni, D.; Yamada, R.; Zlobin, A.V.; Fermilab

    2005-01-01

    As part of the High Field Magnet program at Fermilab several NbTi and Nb 3 Sn strands were tested with particular emphasis on the study of voltage spikes and their relationship to superconductor instabilities. The voltage spikes were detected under various experimental conditions using voltage-current (V-I) and voltage-field (V-H) methods. Two types of spikes, designated ''magnetization'' and ''transport current'' spikes, have been identified. Their origin is most likely related to magnetization flux jump and transport current redistribution, respectively. Many of the signals observed appear to be a combination of these two types of spikes; the combination of these two instability mechanisms should play a dominant role in determining the minimum quench current

  11. Method to Minimize the Low-Frequency Neutral-Point Voltage Oscillations With Time-Offset Injection for Neutral-Point-Clamped Inverters

    DEFF Research Database (Denmark)

    Choi, Ui-Min; Blaabjerg, Frede; Lee, Kyo-Beum

    2015-01-01

    time of small- and medium-voltage vectors. However, if the power factor is lower, there is a limitation to eliminate neutral-point oscillations. In this case, the proposed method can be improved by changing the switching sequence properly. Additionally, a method for neutral-point voltage balancing......This paper proposes a method to reduce the low-frequency neutral-point voltage oscillations. The neutral-point voltage oscillations are considerably reduced by adding a time offset to the three-phase turn-on times. The proper time offset is simply calculated considering the phase currents and dwell...

  12. Sub-Band Gap Turn-On Near-Infrared-to-Visible Up-Conversion Device Enabled by an Organic-Inorganic Hybrid Perovskite Photovoltaic Absorber.

    Science.gov (United States)

    Yu, By Hyeonggeun; Cheng, Yuanhang; Li, Menglin; Tsang, Sai-Wing; So, Franky

    2018-05-09

    Direct integration of an infrared (IR) photodetector with an organic light-emitting diode (OLED) enables low-cost, pixel-free IR imaging. However, the operation voltage of the resulting IR-to-visible up-conversion is large because of the series device architecture. Here, we report a low-voltage near-IR (NIR)-to-visible up-conversion device using formamidinium lead iodide as a NIR absorber integrated with a phosphorescent OLED. Because of the efficient photocarrier injection from the hybrid perovskite layer to the OLED, we observed a sub-band gap turn-on of the OLED under NIR illumination. The device showed a NIR-to-visible up-conversion efficiency of 3% and a luminance on/off ratio of 10 3 at only 5 V. Finally, we demonstrate pixel-free NIR imaging using the up-conversion device.

  13. Three-level boost converter with zero voltage transition

    Directory of Open Access Journals (Sweden)

    Kuo-Ing Hwu

    2017-06-01

    Full Text Available As compared with the traditional boost converter, the three-level boost converter possesses several advantages, such as lower switch voltage stresses and lower inductor current ripple. To improve the efficiency, this paper proposes a zero voltage transition (ZVT three-level boost converter. With the proposed ZVT circuit, the switches can achieve soft switching. Moreover, by using the voltage balance control, the output voltage can be equally across the output capacitors. In this study, the effectiveness of the proposed topology is verified by the experimental results based on the field-programmable gate array control.

  14. Reconceptualizing Autonomy: A Relational Turn in Bioethics.

    Science.gov (United States)

    Jennings, Bruce

    2016-05-01

    History's judgment on the success of bioethics will not depend solely on the conceptual creativity and innovation in the field at the level of ethical and political theory, but this intellectual work is not insignificant. One important new development is what I shall refer to as the relational turn in bioethics. This development represents a renewed emphasis on the ideographic approach, which interprets the meaning of right and wrong in human actions as they are inscribed in social and cultural practices and in structures of lived meaning and interdependence; in an ideographic approach, the task of bioethics is to bring practice into theory, not the other way around. The relational turn in bioethics may profoundly affect the critical questions that the field asks and the ethical guidance it offers society, politics, and policy. The relational turn provides a way of correcting the excessive atomism of many individualistic perspectives that have been, and continue to be, influential in bioethics. Nonetheless, I would argue that most of the work reflecting the relational turn remains distinctively liberal in its respect for the ethical significance of the human individual. It moves away from individualism, but not from the value of individuality.In this review essay, I shall focus on how the relational turn has manifested itself in work on core concepts in bioethics, especially liberty and autonomy. Following a general review, I conclude with a brief consideration of two important recent books in this area: Jennifer Nedelsky's Law's Relations and Rachel Haliburton's Autonomy and the Situated Self. © 2016 The Hastings Center.

  15. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  16. Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

    Science.gov (United States)

    Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

    2016-09-14

    We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

  17. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Luo, Haoze; Iannuzzo, Francesco

    2017-01-01

    the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal......-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies...... decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more...

  18. The effects of inverter magnetic fields on early seed germination of mung beans.

    Science.gov (United States)

    Huang, Hsin-Hsiung; Wang, Show-Ran

    2008-12-01

    The biological effects of extremely low frequency magnetic fields (ELF MFs) on living organisms have been explored in many studies. Most of them demonstrate the biological effects caused by 50/60 Hz magnetic fields or pulsed magnetic fields. However, as the development of power electronics flourishes, the magnetic fields induced are usually in other different waveforms. This study aims to assess the effects of magnetic fields generated by inverter systems on the early growth of plants using mung beans as an example. In the experiment, an inverter which can produce sinusoidal pulsed width modulation (SPWM) voltages was used to drive 3 specially made circular coils and an AC motor. Six SPWM voltages with different fundamental frequencies (10, 20, 30, 40, 50, and 60 Hz) set on the inverter drive the circuit to produce the specific kinds of MFs. The results indicate that the magnetic field induced by a 20 or 60 Hz SPWM voltage has an enhancing effect on the early growth of mung beans, but the magnetic fields induced by SPWM voltages of other frequencies (30, 40, and 50 Hz) have an inhibitory effect, especially at 50 Hz.

  19. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-07-11

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  20. Turn by Turn Measurements at the KEK-ATF

    CERN Document Server

    Renier, Y; Tomas, R; Wendt, M; Eddy, N; Kubo, K; Kuroda, S; Naito, T; Okugi, T; Terunuma, N; Urakawa, J

    2013-01-01

    The ATF damping ring has been upgraded with new read-out electronics for the beam position monitors (BPM), capable to acquire the beam orbits on a turn-by-turn basis, as well as in a high resolution averaging mode. The new BPM system allows to improve optic corrections and to achieve an even smaller vertical emittance (<2pm). Experimental results are presented based on turn-by-turn beam orbit measurements in the ring, for estimating the β functions and dispersion along the lattice. A fast method to measure spectral line amplitude in a few turns is also presented, including the evaluation of chromaticity.

  1. Surge currents and voltages at the low voltage power mains during lightning strike to a GSM tower

    Energy Technology Data Exchange (ETDEWEB)

    Markowska, Renata [Bialystok Technical University (Poland)], E-mail: remark@pb.edu.pl

    2007-07-01

    The paper presents the results of numerical calculations of lightning surge currents and voltages in the low voltage power mains system connected to a free standing GSM base station. Direct lightning strike to GSM tower was studied. The analysis concerned the current that flows to the transformer station through AC power mains, the potential difference between the grounding systems of the GSM and the transformer stations and the voltage differences between phase and PE conductors of the power mains underground cable at both the GSM and the transformer sides. The calculations were performed using a numerical program based on the electromagnetic field theory and the method of moments. (author)

  2. On the Effect of IMF Turning on Ion Dynamics at Mercury

    Science.gov (United States)

    Delcourt, D. C.; Moore, T. E.; Fok, M.-C. H.

    2011-01-01

    We investigate the effect of a rotation of the Interplanetary Magnetic Field (IMF) on the transport of magnetospheric ion populations at Mercury. We focus on ions of planetary origin and investigate their large-scale circulation using three-dimensional single-particle simulations. We show that a nonzero Bx component of the IMF leads to a pronounced asymmetry in the overall circulation pattern . In particular, we demonstrate that the centrifugal acceleration due to curvature of the E x B drift paths is more pronounced in one hemisphere than the other, leading to filling of the magnetospheric lobes and plasma sheet with more or less energetic material depending upon the hemisphere of origin. Using a time-varying electric and magnetic field model, we investigate the response of ions to rapid (a few tens of seconds) re-orientation of the IMF. We show that, for ions with gyroperiods comparable to the field variation time scale, the inductive electric field should lead to significant nonadiabatic energization, up to several hundreds of eVs or a few keVs. It thus appears that IMP turning at Mercury should lead to localized loading of the magnetosphere with energetic material of planetary origin (e.g., Na+).

  3. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  4. Cavity Voltage Phase Modulation MD blocks 3 and 4

    CERN Document Server

    Mastoridis, T; Butterworth, A; Molendijk, J; Tuckmantel, J

    2013-01-01

    The LHC RF/LLRF system is currently setup for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would push the klystrons to saturation. For beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam (transient beam loading) will not be corrected, but the strong RF feedback and One-Turn Delay feedback will still be active for RF loop and beam stability in physics. To achieve this, the voltage set point should be adapted for each bunch. The goal of these MDs was to test thefirmware version of an iterative algorithm that adjusts the voltage set point to achieve the optimal phase modulation for klystron forward power considerations.

  5. Voltage spikes in Nb3Sn and NbTi strands

    Energy Technology Data Exchange (ETDEWEB)

    Bordini, B.; Ambrosio, G.; Barzi, E.; Carcagno, R.; Feher, S.; Kashikhin, V.V.; Lamm, M.J.; Orris, D.; Tartaglia, M.; Tompkins, J.C.; Turrioni, D.; Yamada, R.; Zlobin,; /Fermilab

    2005-09-01

    As part of the High Field Magnet program at Fermilab several NbTi and Nb{sub 3}Sn strands were tested with particular emphasis on the study of voltage spikes and their relationship to superconductor instabilities. The voltage spikes were detected under various experimental conditions using voltage-current (V-I) and voltage-field (V-H) methods. Two types of spikes, designated ''magnetization'' and ''transport current'' spikes, have been identified. Their origin is most likely related to magnetization flux jump and transport current redistribution, respectively. Many of the signals observed appear to be a combination of these two types of spikes; the combination of these two instability mechanisms should play a dominant role in determining the minimum quench current.

  6. Analysis of NSTX TF Joint Voltage Measurements

    International Nuclear Information System (INIS)

    Woolley R

    2005-01-01

    This report presents findings of analyses of recorded current and voltage data associated with 72 electrical joints operating at high current and high mechanical stress. The analysis goal was to characterize the mechanical behavior of each joint and thus evaluate its mechanical supports. The joints are part of the toroidal field (TF) magnet system of the National Spherical Torus Experiment (NSTX) pulsed plasma device operating at the Princeton Plasma Physics Laboratory (PPPL). Since there is not sufficient space near the joints for much traditional mechanical instrumentation, small voltage probes were installed on each joint and their voltage monitoring waveforms have been recorded on sampling digitizers during each NSTX ''shot''

  7. The effect of high voltage, high frequency pulsed electric field on slain ovine cortical bone.

    Science.gov (United States)

    Asgarifar, Hajarossadat; Oloyede, Adekunle; Zare, Firuz

    2014-04-01

    High power, high frequency pulsed electric fields known as pulsed power (PP) has been applied recently in biology and medicine. However, little attention has been paid to investigate the application of pulse power in musculoskeletal system and its possible effect on functional behavior and biomechanical properties of bone tissue. This paper presents the first research investigating whether or not PP can be applied safely on bone tissue as a stimuli and what will be the possible effect of these signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to PP and in comparison with the control samples. A positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 V and 10 kHz). The functional behavior of bone in response to pulse power excitation was elucidated by applying compressive loading until failure. The stiffness, failure stress (strength) and the total fracture energy (bone toughness) were determined as a measure of the main bone characteristics. Furthermore, an ultrasonic technique was applied to determine and comprise bone elasticity before and after pulse power stimulation. The elastic property of cortical bone samples appeared to remain unchanged following exposure to pulse power excitation for all three orthogonal directions obtained from ultrasonic technique and similarly from the compression test. Nevertheless, the compressive strength and toughness of bone samples were increased when they were exposed to 66 h of high power pulsed electromagnetic field compared to the control samples. As the toughness and the strength of the cortical bone tissue are directly associated with the quality and integrity of the collagen matrix whereas its stiffness is primarily related to bone mineral content these overall results may address that although, the pulse power stimulation can influence the arrangement or the quality of the collagen network

  8. Modeling of a quantized current and gate field-effect in gated three-terminal Cu2-αS electrochemical memristors

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2015-02-01

    Full Text Available Memristors exhibit very sharp off-to-on transitions with a large on/off resistance ratio. These remarkable characteristics coupled with their long retention time and very simple device geometry make them nearly ideal for three-terminal devices where the gate voltage can change their on/off voltages and/or simply turn them off, eliminating the need for bipolar operations. In this paper, we propose a cation migration-based computational model to explain the quantized current conduction and the gate field-effect in Cu2-αS memristors. Having tree-shaped conductive filaments inside a memristor is the reason for the quantized current conduction effect. Applying a gate voltage causes a deformation of the conductive filaments and thus controls the SET and the RESET process of the device.

  9. Voltage Stabilizer Based on SPWM technique Using Microcontroller

    OpenAIRE

    K. N. Tarchanidis; J. N. Lygouras; P. Botsaris

    2013-01-01

    This paper presents an application of the well known SPWM technique on a voltage stabilizer, using a microcontroller. The stabilizer is AC/DC/AC type. So, the system rectifies the input AC voltage to a suitable DC level and the intelligent control of an embedded microcontroller regulates the pulse width of the output voltage in order to produce through a filter a perfect sinusoidal AC voltage. The control program on the microcontroller has the ability to change the FET transistor ...

  10. Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission device

    International Nuclear Information System (INIS)

    Uh, Hyung Soo; Park, Sang Sik

    2006-01-01

    In this paper, we demonstrate a new triode-type field emitter arrays using carbon nanotubes (CNTs) as an electron emitter source. In the proposed structure, the gate electrode is located underneath the cathode electrode and the extractor electrode is surrounded by CNT emitters. CNTs were selectively grown on the patterned Ni catalyst layer by using plasma-enhanced chemical vapor deposition (PECVD). Vertically aligned CNTs were grown with gas mixture of acetylene and ammonia under external DC bias. Compared with a conventional under-gate structure, the proposed structure reduced the turn-on voltage by about 30%. In addition, with a view to controlling the density of CNTs, Ni catalyst thickness was varied and rapid thermal annealing (RTA) treatment was optionally adopted before CNT growth. With controlled Ni thickness and RTA condition, field emission efficiency was greatly improved by reducing the density of CNTs, which is due to the reduction of the electric field screening effect caused by dense CNTs

  11. Mechanism of Occurring Over-Voltage Phenomena in Distributed Power System on Energization of Transformers

    Science.gov (United States)

    Nakachi, Yoshiki; Ueda, Fukashi; Kajikawa, Takuya; Amau, Tooru; Kameyama, Hirokazu; Ito, Hisanori

    This paper verifies the mechanism of occurring over voltage phenomena in the distributed power system on energizing the transformer. This over-voltage, which is observed at the actual distributed power system, with heavy inrush current is found to occur at about 0.1-0.2sec after the energizing and continue for a duration of more than 0.1[sec]. There is a concern that this over-voltage may operate the protection relay and deteriorate the insulation of apparatus. It is basically caused by the resonance between the shunt capacitors and saturated/unsaturated magnetizing inductance of transformer, system inductance. By using analytical formulation of a simple equivalent circuit, its mechanism has been verified through simulations carried out by using EMTP. Moreover, the sympathetic interaction between transformers is prolonged the duration of the over-voltage by the field test data is discussed in this paper.

  12. Energy Storage System with Voltage Equalization Strategy for Wind Energy Conversion

    Directory of Open Access Journals (Sweden)

    Cheng-Tao Tsai

    2012-07-01

    Full Text Available In this paper, an energy storage system with voltage equalization strategy for wind energy conversion is presented. The proposed energy storage system provides a voltage equalization strategy for series-connected lead-acid batteries to increase their total storage capacity and lifecycle. In order to draw the maximum power from the wind energy, a perturbation-and-observation method and digital signal processor (DSP are incorporated to implement maximum power point tracking (MPPT algorithm and power regulating scheme. In the proposed energy storage system, all power switches have zero-voltage-switching (ZVS feature at turn-on transition. Therefore, the conversion efficiency can be increased. Finally, a prototype energy storage system for wind energy conversion is built and implemented. Experimental results have verified the performance and feasibility of the proposed energy storage system for wind energy conversion.

  13. Effect of AC electric fields on flame spread over electrical wire

    KAUST Repository

    Kim, Minkuk

    2011-01-01

    The effect of electric fields on the characteristics of flame spread over insulated electrical wire has been investigated experimentally by varying AC voltage and frequency applied to the wire in the normal gravity condition. The polyethylene (PE) insulated electrical wire was placed horizontally on electrically non-conducting posts and one end of the wire was connected to the high voltage terminal. Thus, the electrical system is the single electrode configuration. The wire was ignited at one end and the flame spread rate along the wire has been measured from the images using a video camera. Two distinct regimes existed depending on the applied AC frequency. In the low frequency regime, the flame spread rate decreased with the frequency and voltage. While in the high frequency regime, it decreased initially with voltage and then increased. At high frequency, the spread rate was even over that without applying electric fields. This result implies that fire safety codes developed without considering the effect of electric fields may require modifications. © 2010 Published by Elsevier Inc. on behalf of The Combustion Institute. All rights reserved.

  14. Voltage control of cavity magnon polariton

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, S., E-mail: kaurs3@myumanitoba.ca; Rao, J. W.; Gui, Y. S.; Hu, C.-M., E-mail: hu@physics.umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Yao, B. M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-07-18

    We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

  15. Radiation effects on residual voltage of polyethylene films

    International Nuclear Information System (INIS)

    Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

    1986-01-01

    It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

  16. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Science.gov (United States)

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. High resolution separations of charge variants and disulfide isomers of monoclonal antibodies and antibody drug conjugates using ultra-high voltage capillary electrophoresis with high electric field strength.

    Science.gov (United States)

    Henley, W Hampton; He, Yan; Mellors, J Scott; Batz, Nicholas G; Ramsey, J Michael; Jorgenson, James W

    2017-11-10

    Ultra-high voltage capillary electrophoresis with high electric field strength has been applied to the separation of the charge variants, drug conjugates, and disulfide isomers of monoclonal antibodies. Samples composed of many closely related species are difficult to resolve and quantify using traditional analytical instrumentation. High performance instrumentation can often save considerable time and effort otherwise spent on extensive method development. Ideally, the resolution obtained for a given CE buffer system scales with the square root of the applied voltage. Currently available commercial CE instrumentation is limited to an applied voltage of approximately 30kV and a maximum electric field strength of 1kV/cm due to design limitations. The instrumentation described here is capable of safely applying potentials of at least 120kV with electric field strengths over 2000V/cm, potentially doubling the resolution of the best conventional CE buffer/capillary systems while decreasing analysis time in some applications. Separations of these complex mixtures using this new instrumentation demonstrate the potential of ultra-high voltage CE to identify the presence of previously unresolved components and to reduce analysis time for complex mixtures of antibody variants and drug conjugates. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

    Science.gov (United States)

    Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

    2013-09-15

      One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

  19. Immediate Effects of Clock-Turn Strategy on the Pattern and Performance of Narrow Turning in Persons With Parkinson Disease.

    Science.gov (United States)

    Yang, Wen-Chieh; Hsu, Wei-Li; Wu, Ruey-Meei; Lin, Kwan-Hwa

    2016-10-01

    Turning difficulty is common in people with Parkinson disease (PD). The clock-turn strategy is a cognitive movement strategy to improve turning performance in people with PD despite its effects are unverified. Therefore, this study aimed to investigate the effects of the clock-turn strategy on the pattern of turning steps, turning performance, and freezing of gait during a narrow turning, and how these effects were influenced by concurrent performance of a cognitive task (dual task). Twenty-five people with PD were randomly assigned to the clock-turn or usual-turn group. Participants performed the Timed Up and Go test with and without concurrent cognitive task during the medication OFF period. The clock-turn group performed the Timed Up and Go test using the clock-turn strategy, whereas participants in the usual-turn group performed in their usual manner. Measurements were taken during the 180° turn of the Timed Up and Go test. The pattern of turning steps was evaluated by step time variability and step time asymmetry. Turning performance was evaluated by turning time and number of turning steps. The number and duration of freezing of gait were calculated by video review. The clock-turn group had lower step time variability and step time asymmetry than the usual-turn group. Furthermore, the clock-turn group turned faster with fewer freezing of gait episodes than the usual-turn group. Dual task increased the step time variability and step time asymmetry in both groups but did not affect turning performance and freezing severity. The clock-turn strategy reduces turning time and freezing of gait during turning, probably by lowering step time variability and asymmetry. Dual task compromises the effects of the clock-turn strategy, suggesting a competition for attentional resources.Video Abstract available for more insights from the authors (see Supplemental Digital Content 1, http://links.lww.com/JNPT/A141).

  20. Detailed design of a 13 kA 13 kV dc solid-state turn-off switch. [Revision

    International Nuclear Information System (INIS)

    Praeg, W.F.

    1985-01-01

    An experimental facility for the study of electromagnetic effects in the First Wall-Blanket-Shield (FWBS) systems of fusion reactors has been constructed at Argonne National Laboratory (ANL). In a test volume of 0.76 m 3 , a vertical, pulsed 5 kG dipole field (B dot less than or equal to 320 kGs -1 ) is perpendicular to a 10 kG solenoid field. Power supplies of 2.75 MW at 550 V dc and 5.5 MW at 550 V dc and a solid-state switch rated at 13 kA and 13 kV (169 MW) control the pulsed magnetic fields. The total stored energy in the coils is 2.6 MJ. This paper describes the design and construction features of the solid-state switching circuit which turns off a dc current of 13 kA in approximately 82 μs and holds off voltages of less than or equal to 13 kV. 14 figs

  1. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  2. Novel high-voltage power lateral MOSFET with adaptive buried electrodes

    International Nuclear Information System (INIS)

    Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

    2012-01-01

    A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Feasible voltage-tap based quench detection in a Ag/Bi-2212 coil enabled by fast 3D normal zone propagation

    International Nuclear Information System (INIS)

    Shen, Tengming; Ye, Liyang; Li, Pei

    2016-01-01

    For this study, small insert solenoids have been built using a commercial Ag/Bi-2212 multifilamentary round wire, insulated with a new thin TiO 2 – polymer coating insulation (thickness in ~20 μm versus ~100 μm for a commonly used mullite braided sleeve insulation), and characterized in background magnetic field up to 14 T at 4.2 K to explore the high-field performance and quench detection of Bi-2212 magnets. The coil has no visible leakage and no electrical shorts after reaction, and it carries 280 A/mm -2 in a background field 14 T and generates an additional 1.7 T. A notable result is that, despite normal zones propagate slowly along the conductor, the hot spot temperature upon detection increases only from 40 K to 60 K when the resistive quench detection voltage threshold increases from 0.1 V to 1 V for all operating current density investigated, showing that quench detection using voltage taps is feasible for this coil. This is in a strong contrast to a coil we previously built to the same specifications but from wires insulated with the mullite braided sleeve insulation, for which the hot spot temperature upon detection increases from ~80 K to ~140 K while increasing from the detection voltage threshold from 0.1 V to 1 V, and thus for which quench detection using voltage taps presents significant risks, consistent with the common belief that the effectiveness of quench detection using voltage taps for superconducting magnets built using high temperature superconductors is seriously compromised by their slow normal zone propagation. This striking difference is ascribed to the fast transverse quench propagation enabled by thin insulation and improved thermal coupling between conductor turns. Finally, this work demonstrates that quench detection for high-temperature superconducting magnets highly depends on the design and construction of the coils such as insulation materials used and this dependence should be factored into the overall magnet design

  4. Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

    Science.gov (United States)

    Metz, Roger N.

    1991-01-01

    This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

  5. A Study on the Measurement of Ultrasound Velocity to Evaluate Degradation of Low Voltage Cables for Nuclear Power Plants

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Cho; Kang, Suk Chull; Goo, Cheol Soo [Korea Institute of Nuclear Safety, Daejeon (Korea, Republic of); Kim, Jin Ho; Park, Jae Seok; Joo, Geum Jong; Park, Chi Seung [KAITEC, Seoul (Korea, Republic of)

    2004-08-15

    Several kinds of low voltage cables have been used in nuclear power plants for the supply of electric power, supervision, and the propagation of control signals. These low voltage tables must be inspected for safe and stable operation of nuclear power plants. In particular, the degradation diagnosis to estimate the integrity of low voltage rabies has recently been emphasized according to the long use of nuclear power plants. In order to evaluate their degradation, the surrounding temperature, hardness of insulation material, elongation at breaking point (EAB), etc. have been used. However, the measurement of temperature or hardness is not useful because of the absence of quantitative criteria; the inspection of a sample requires turning off of the power plant power; and, the electrical inspection method is not sufficiently sensitive from the initial through the middle stage of degradation. In this research, based on the theory that the ultrasonic velocity changes with relation to the degradation of the material, we measured the ultrasonic velocity as low voltage cables were degraded. To this end, an ultrasonic degradation diagnosis device was developed and used to measure the ultrasonic velocity with the clothing on the cable, and it was confirmed that the ultrasonic velocity changes according to the degradation of low voltage cables. The low voltage cables used in nuclear power plants were degraded at an accelerated rate, and EAB was measured in a tensile test conducted after the measurement of ultrasonic velocity. With the increasing degradation degree, the ultrasonic velocity decreased, whose potential as a useful parameter for the quantitative degradation evaluation was thus confirmed

  6. PV Power-Generation System with a Phase-Shift PWM Technique for High Step-Up Voltage Applications

    Directory of Open Access Journals (Sweden)

    Cheng-Tao Tsai

    2012-01-01

    Full Text Available A PV power-generation system with a phase-shift pulse-width modulation (PWM technique for high step-up voltage applications is proposed. The proposed power-generation system consists of two stages. In the input stage, all power switches of the full-bridge converter with phase-shift technique can be operated with zero-current switching (ZCS at turn-on or turn-off transition. Hence, the switching losses of the power switches can be reduced. Then, in the DC output stage, a voltage-doubler circuit is used to boost a high dc-link bus voltage. To supply a utility power, a dc/ac inverter is connected to induce a sinusoidal source. In order to draw a maximum power from PV arrays source, a microcontroller is incorporated with the perturbation and observation method to implement maximum power point tracking (MPPT algorithm and power regulating scheme. In this study, a full load power of 300 W prototype has been built. Experimental results are presented to verify the performance and feasibility of the proposed PV power-generation system.

  7. Irreversible magnetic-field dependence of ferromagnetic resonance and inverse spin Hall effect voltage in CoFeB/Pt bilayer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang-Il [Department of Materials Science and Engineering, Korea University, Seoul, 136-713 (Korea, Republic of); Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Seo, Min-Su [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Choi, Yeon Suk, E-mail: ychoi@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Park, Seung-Young, E-mail: parksy@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of)

    2017-01-01

    Magnetic field (H) sweeping direction dependences of the mixed voltage V{sub mix} induced by the inverse-spin Hall effect(ISHE) and spin-rectified effect (SRE) in a CoFeB (5 nm)/Pt (10 nm) bilayer structure are investigated using the ferromagnetic resonance in the TE mode cavities and coplanar waveguide methods. Conventionally, the magnitude of ISHE voltage V{sub ISH} (symmetric) excluding the SRE (antisymmetric component) was unavoidably separated from the fitting curve of V{sub mix} (a sum of a symmetric and an antisymmetric part) for one direction of H-source. By studying the ratio of the two voltage parts with the bi-directional H sweeping, the optimized V{sub ISH} (no SRE condition) value which also include a well-defined spin Hall angle can be obtained via the linear response relation of ISHE and SRE components. - Highlights: • Hysteretic behavior of ferromagnetic resonance spectra in the CoFeB/Pt sample. • Hysteretic behavior of inverse-spin Hall effect voltage in the CoFeB/Pt sample. • Proportion of inverse spin-Hall effect voltage can be determined by the cavity mode. • The hysteretic behavior arise from the unsaturated magnetization limit. • The well-defined spin Hall angle which consider a hysteresis can be obtained.

  8. Design of high voltage power supply of miniature X-ray tube based on resonant Royer

    International Nuclear Information System (INIS)

    Liu Xiyao; Zeng Guoqiang; Tan Chengjun; Luo Qun; Gong Chunhui; Huang Rui

    2013-01-01

    Background: In recent years, X rays are widely used in various fields. With the rapid development of national economy, the demand of high quality, high reliability, and high stability miniature X-ray tube has grown rapidly. As an important core component of miniature X-ray tube, high voltage power supply has attracted wide attention. Purpose: To match miniature, the high voltage power supply should be small, lightweight, good quality, etc. Based on the basic performance requirements of existing micro-X-ray tube high voltage power supply, this paper designs an output from 0 to -30 kV adjustable miniature X-ray tube voltage DC power supply. Compared to half-bridge and full-bridge switching-mode power supply, its driving circuit is simple. With working on the linear condition, it has no switching noise. Methods: The main circuit makes use of DC power supply to provide the energy. The resonant Royer circuit supplies sine wave which drives to the high frequency transformer's primary winding with resultant sine-like high voltage appearing across the secondary winding. Then, the voltage doubling rectifying circuit would achieve further boost. In the regulator circuit, a feedback control resonant transistor base current is adopted. In order to insulate air, a silicone rubber is used for high pressure part packaging, and the output voltage is measured by the dividing voltage below -5 kV. Results: The stability of circuit is better than 0.2%/6 h and the percent of the output ripple voltage is less than 0.3%. Keeping the output voltage constant, the output current can reach 57 μA by changing the size of load resistor. This high voltage power supply based on resonant Royer can meet the requirement of miniature X-ray tube. Conclusions: The circuit can satisfy low noise, low ripple, low power and high voltage regulator power supply design. However, its efficiency is not high enough because of the linear condition. In the next design, to further reduce power consumption, we

  9. Experimental Study of Arcing on High-voltage Solar Arrays

    Science.gov (United States)

    Vayner, Boris; Galofaro, Joel; Ferguson, Dale

    2005-01-01

    The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

  10. High-Field Quench Behavior and Protection of $Bi_2 Sr_2 Ca Cu_2 O_x$ Coils: Minimum and Maximum Quench Detection Voltages

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Tengming [Fermilab; Ye, Liyang [NCSU, Raleigh; Turrioni, Daniele [Fermilab; Li, Pei [Fermilab

    2015-01-01

    Small insert coils have been built using a multifilamentary Bi2Sr2CaCu2Ox round wire, and characterized in background fields to explore the quench behaviors and limits of Bi2Sr2CaCu2Ox superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltage shall be greater than 50 mV to not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increases from ~40 K to ~80 K with increasing the operating wire current density Jo from 89 A/mm2 to 354 A/mm2 whereas for the voltage to reach 1 V, it increases from ~60 K to ~140 K, showing the increasing negative impact of slow normal zone propagation on quench detection with increasing Jo and the need to limit the quench detection voltage to < 1 V. These measurements, coupled with an analytical quench model, were used to access the impact of the maximum allowable voltage and temperature upon quench detection on the quench protection, assuming to limit the hot spot temperature to <300 K.

  11. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  12. Induced voltage due to time-dependent magnetisation textures

    International Nuclear Information System (INIS)

    Kudtarkar, Santosh Kumar; Dhadwal, Renu

    2010-01-01

    We determine the induced voltage generated by spatial and temporal magnetisation textures (inhomogeneities) in metallic ferromagnets due to the spin diffusion of non-equilibrium electrons. Using time dependent semi-classical theory as formulated in Zhang and Li and the drift-diffusion model of transport it is shown that the voltage generated depends critically on the difference in the diffusion constants of up and down spins. Including spin relaxation results in a crucial contribution to the induced voltage. We also show that the presence of magnetisation textures results in the modification of the conductivity of the system. As an illustration, we calculate the voltage generated due to a time dependent field driven helimagnet by solving the Landau-Lifshitz equation with Gilbert damping and explicitly calculate the dependence on the relaxation and damping parameters.

  13. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  14. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    Science.gov (United States)

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  15. Effect of magneto rheological damper on tool vibration during hard turning

    Science.gov (United States)

    Paul, P. Sam; Varadarajan, A. S.

    2012-12-01

    Recently, the concept of hard turning has gained considerable attention in metal cutting as it can apparently replace the traditional process cycle of turning, heat treating, and finish grinding for assembly of hard wear resistant steel parts. The present investigation aims at developing a magneto rheological (MR) fluid damper for suppressing tool vibration and promoting better cutting performance during hard turning. The magneto rheological Fluid acts as a viscoelastic spring with non-linear vibration characteristics that are controlled by the composition of the magneto rheological fluid, the shape of the plunger and the electric parameters of the magnetizing field. Cutting experiments were conducted to arrive at a set of electrical, compositional and shape parameters that can suppress tool vibration and promote better cutting performance during turning of AISI 4340 steel of 46 HRC with minimal fluid application using hard metal insert with sculptured rake face. It was observed that the use of MR fluid damper reduces tool vibration and improves the cutting performance effectively. Also commercialization of this idea holds promise to the metal cutting industry.

  16. Electro-chemical coupling in the voltage-dependent phosphatase Ci-VSP

    Science.gov (United States)

    Kohout, Susy C.; Bell, Sarah C.; Liu, Lijun; Xu, Qiang; Minor, Daniel L.; Isacoff, Ehud Y.

    2010-01-01

    In the voltage sensing phosphatase, Ci-VSP, a voltage sensing domain (VSD) controls a lipid phosphatase domain (PD). The mechanism by which the domains are allosterically coupled is not well understood. Using an in vivo assay, we find that the inter-domain linker that connects the VSD to the PD is essential for coupling the full-length protein. Biochemical assays show that the linker is also needed for activity in the isolated PD. We identify a late step of VSD motion in the full-length protein that depends on the linker. Strikingly, this VSD motion is found to require PI(4,5)P2, a substrate of Ci-VSP. These results suggest that the voltage-driven motion of the VSD turns the enzyme on by rearranging the linker into an activated conformation, and that this activated conformation is stabilized by PI(4,5)P2. We propose that Ci-VSP activity is self-limited because its decrease of PI(4,5)P2 levels decouples the VSD from the enzyme. PMID:20364128

  17. Influence of direct and alternating current electric fields on efficiency promotion and leaching risk alleviation of chelator assisted phytoremediation.

    Science.gov (United States)

    Luo, Jie; Cai, Limei; Qi, Shihua; Wu, Jian; Sophie Gu, Xiaowen

    2018-03-01

    Direct and alternating current electric fields with various voltages were used to improve the decontamination efficiency of chelator assisted phytoremediation for multi-metal polluted soil. The alleviation effect of electric field on leaching risk caused by chelator application during phytoremediation process was also evaluated. Biomass yield, pollutant uptake and metal leaching retardation under alternating current (AC) and direct current (DC) electric fields were compared. The biomass yield of Eucalyptus globulus under AC fields with various voltages (2, 4 and 10 V) were 3.91, 4.16 and 3.67kg, respectively, significantly higher than the chelator treatment without electric field (2.71kg). Besides growth stimulation, AC fields increased the metal concentrations of plant tissues especially in aerial parts manifested by the raised translocation factor of different metals. Direct current electric fields with low and moderate voltages increased the biomass production of the species to 3.45 and 3.12kg, respectively, while high voltage on the contrary suppressed the growth of the plants (2.66kg). Under DC fields, metal concentrations elevated obviously with increasing voltages and the metal translocation factors were similar under all voltages. Metal extraction per plant achieved the maximum value under moderate voltage due to the greatest biomass production. DC field with high voltage (10V) decreased the volume of leachate from the chelator treatment without electric field from 1224 to 56mL, while the leachate gathered from AC field treatments raised from 512 to 670mL. DC field can retard the downward movement of metals caused by chelator application more effectively relative to AC field due to the constant water flow and electroosmosis direction. Alternating current field had more promotive effect on chelator assisted phytoremediation efficiency than DC field illustrated by more metal accumulation in the species. However, with the consideration of leaching risk, DC

  18. Energy Storage Characteristic Analysis of Voltage Sags Compensation for UPQC Based on MMC for Medium Voltage Distribution System

    Directory of Open Access Journals (Sweden)

    Yongchun Yang

    2018-04-01

    Full Text Available The modular multilevel converter (MMC, as a new type of voltage source converter, is increasingly used because it is a distributed storage system. There are many advantages of using the topological structure of the MMC on a unified power quality controller (UPQC, and voltage sag mitigation is an important use of the MMC energy storage system for the power quality compensation process. In this paper, based on the analysis of the topology of the MMC, the essence of energy conversion in a UPQC of voltage sag compensation is analyzed; then, the energy storage characteristics are calculated and analyzed to determine the performance index of voltage sag compensation; in addition, the simulation method is used to verify the voltage sag compensation characteristics of the UPQC; finally, an industrial prototype of the UPQC based on an MMC for 10 kV of medium voltage distribution network has been developed, and the basic functions of UPQC have been tested.

  19. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    Energy Technology Data Exchange (ETDEWEB)

    An, Seok Chan; Kim, Jin Sub [Yonsei University, Seoul (Korea, Republic of); Chu, Yong [National Fusion Research Institute(NFRI), Daejeon (Korea, Republic of)

    2016-03-15

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals.

  20. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    International Nuclear Information System (INIS)

    An, Seok Chan; Kim, Jin Sub; Chu, Yong

    2016-01-01

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals

  1. The local domain wall position in ferromagnetic thin wires: simultaneous measurement of resistive and transverse voltages at multiple points

    International Nuclear Information System (INIS)

    Hanada, R.; Sugawara, H.; Aoki, Y.; Sato, H.; Shigeto, K.; Shinjo, T.; Ono, T.; Miyajima, H.

    2002-01-01

    We have simultaneously measured the field dependences of voltages at multiple pairs of resistance and transverse voltage probes in ferromagnetic wires (with either magnetic or non-magnetic voltage probes). Both the resistive (through the giant magnetoresistance and anisotropic magnetoresistance) and transverse voltages (through the planar Hall effect) exhibit abrupt jumps, reflecting discrete motion of domain walls or rotations of magnetization. Voltage probes, even if non-magnetic, are found to affect the jump fields depending on the sample conditions. We demonstrate that the specific information on the domain (wall) motion along a thin ferromagnetic wire could be obtained from the jump fields. (author)

  2. Electric fields effect on liftoff and blowoff of nonpremixed laminar jet flames in a coflow

    KAUST Repository

    Kim, Minkuk

    2010-01-01

    The stabilization characteristics of liftoff and blowoff in nonpremixed laminar jet flames in a coflow have been investigated experimentally for propane fuel by applying AC and DC electric fields to the fuel nozzle with a single-electrode configuration. The liftoff and blowoff velocities have been measured by varying the applied voltage and frequency of AC and the voltage and the polarity of DC. The result showed that the AC electric fields extended the stabilization regime of nozzle-attached flame in terms of jet velocity. As the applied AC voltage increased, the nozzle-attached flame was maintained even over the blowout velocity without having electric fields. In such a case, a blowoff occurred directly without experiencing a lifted flame. While for the DC cases, the influence on liftoff was minimal. There existed three different regimes depending on the applied AC voltage. In the low voltage regime, the nozzle-detachment velocity of either liftoff or blowoff increased linearly with the applied voltage, while nonlinearly with the AC frequency. In the intermediate voltage regime, the detachment velocity decreased with the applied voltage and reasonably independent of the AC frequency. At the high voltage regime, the detachment was significantly influenced by the generation of discharges. © 2009 The Combustion Institute.

  3. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  4. Reversed field pinch experiments

    International Nuclear Information System (INIS)

    Roberston, S.

    1991-05-01

    The Reversatron RFP is usually operated with toroidal field windings which are a continuous helix of 144 turns. These windings produce a poloidal current which is uniform around the torus. The distribution of current is fixed by the geometry so that the applied field has only an m = 0, n = 0 component. The windings cannot act to stabilize an m = 0 mode with |n| > 0 or any m = 1 mode because these modes will excite no current in the windings. It has recently been suggested that parallel connected field coils might act as a shell by forcing the flux within each winding to be the same. Coils connected in parallel must have the same voltage at their terminals and thus must enclose the same volt-seconds or flux. Data from ZT-40 show that the discharges are more quiescent when parallel or series-parallel connected windings are used

  5. Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

    Science.gov (United States)

    Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

    2018-06-01

    The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

  6. The Influence of the Non-Ionizing Electromagnetic Fields of a high Voltage overhead lines on the human being (Biological laboratory study)

    International Nuclear Information System (INIS)

    Mobadda, SH.; Rayes, M.; Sleman, A.

    2009-01-01

    Many laboratory studies had been carried out on the effect of electromagnetic fields with non-ionized radiations of the H V alternative lines on human beings late in the past century in many European countries and in the United States of America. However, such studies are still running in order to contribute beside the statistical studies in illustrating such effect.Those laboratory studies were made on animals like rats, mice and monkeys having similar tissues to man. They were subjected to electromagnetic fields with variable frequency electric power system and for different intervals or on volunteers, though very few of course, since international laws forbid it. In our surrounding, a specific and unique case is available, i.e. many people are living directly under H V lines. Consequently, they are susceptible to the fields of such lines for long periods of time up to over thirty years and to various voltages subject to the location of their lodges under the transmission lines. Thus, it has made available an appropriate surrounding to conduct a bio-laboratory hematic study on different specimens of inhabitants in terms of sex and age category. These specimens are compared with those of non-inhabitants but within the same environmental conditions. This study is conducted in collaboration with specialists from the Faculty of Medicine and Al-Mouassat Hospital -Damascus University. Clear and useful findings and indices have been obtained. (author)

  7. Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

    Energy Technology Data Exchange (ETDEWEB)

    Savic, M.S.

    1986-07-01

    The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

  8. Characteristics of transformer-type superconducting fault current limiter depending on reclosing in changing the number of turns of secondary winding

    International Nuclear Information System (INIS)

    Choi, S.G.; Choi, H.S.; Cho, Y.S.; Park, H.M.; Jung, B.I.; Ha, K.H.

    2011-01-01

    The amount of consumed power is increasing with industrial development and rapidly increasing population. In accidents due to increased power consumption, the fault current sharply increases. Superconducting fault current limiters (SFCL) are studied widely to limit such fault currents. In this study, the characteristics of a transformer-type SFCL are analyzed depending on reclosing in changing the number of secondary winding turns. For experiment conditions, the turn ratio of the primary and secondary windings of a transformer-type SFCL was set to 4:2 and 4:4. The voltage was incremented by 80 V from 120 V for the experiment. The circuit breaker was operated with two open times of CO-0.17 s -CO-0.17 s -CO seconds (C; closed, O; open), respectively. Comparing the result for the experiment conditions with the case of the turn ratios of the primary and secondary windings at 4:4 and 4:2, the fault current was limited effectively in 4:2 than in 4:4 for the fault current limit ratios. With respect to the result of recovery characteristics, it was examined that the superconducting unit recovered faster when the turn ratio of the primary and secondary windings was 4:2 than 4:4. Comparing the amount of consumed power related to the recovery characteristics of the superconducting element, it was examined that the recovery time was faster in less power consumption for the superconducting unit. As such, since a transformer-type SFCL depending on reclosing in changing the number of turns of the secondary winding controls the turn ratio of the secondary winding to control fault current limiting and recovery characteristics, it can normally operate.

  9. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  10. Spin-orbit interaction and asymmetry effects on Kondo ridges at finite magnetic field

    DEFF Research Database (Denmark)

    Grap, Stephan; Andergassen, Sabine; Paaske, Jens

    2011-01-01

    ridges, which are robust against SOI as time-reversal symmetry is preserved. As a result of the crossing of a spin-up and a spin-down level at vanishing SOI, two additional Kondo plateaus appear at finite B. They are not protected by symmetry and rapidly vanish if the SOI is turned on. Left......-right asymmetric level-lead couplings and detuned on-site energies lead to a simultaneous breaking of left-right and bonding-antibonding state symmetry. In this case, the finite-B Kondo ridges in the Vg-B plane are bent with respect to the Vg axis. For the Kondo ridge to develop, different level renormalizations......We study electron transport through a serial double quantum dot with Rashba spin-orbit interaction (SOI) and Zeeman field of amplitude B in the presence of local Coulomb repulsion. The linear conductance as a function of a gate voltage Vg equally shifting the levels on both dots shows two B=0 Kondo...

  11. 30 CFR 77.704-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as... provided in § 77.103) that such high-voltage line has been deenergized and grounded. Such qualified person...

  12. A 70 kV solid-state high voltage pulse generator based on saturable pulse transformer.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2014-02-01

    High voltage pulse generators are widely applied in many fields. In recent years, solid-state and operating at repetitive mode are the most important developing trends of high voltage pulse generators. A solid-state high voltage pulse generator based on saturable pulse transformer is proposed in this paper. The proposed generator is consisted of three parts. They are charging system, triggering system, and the major loop. Saturable pulse transformer is the key component of the whole generator, which acts as a step-up transformer and main switch during working process of this generator. The circuit and working principles of the proposed pulse generator are introduced first in this paper, and the saturable pulse transformer used in this generator is introduced in detail. Circuit of the major loop is simulated to verify the design of the system. Demonstration experiments are carried out, and the results show that when the primary energy storage capacitor is charged to a high voltage, such as 2.5 kV, a voltage with amplitude of 86 kV can be achieved on the secondary winding. The magnetic core of saturable pulse transformer is saturated deeply and the saturable inductance of the secondary windings is very small. The switch function of the saturable pulse transformer can be realized ideally. Therefore, a 71 kV output voltage pulse is formed on the load. Moreover, the magnetic core of the saturable pulse transformer can be reset automatically.

  13. Voltage current characteristics of type III superconductors

    Science.gov (United States)

    Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

  14. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  15. Preliminary study on field buses for the control system of the high voltage of the ATLAS hadronic calorimeter; Etude preliminaire d`un reseau de terrain pour le systeme de controle des hautes tensions du calorimetre hadronique d`Atlas

    Energy Technology Data Exchange (ETDEWEB)

    Drevet, F.; Chadelas, R.; Montarou, G.

    1996-12-31

    We present here after a preliminary study on field buses for the control system of the high voltage of the photomultipliers of the TILECAL calorimeter. After some generalities, different commercial buses are reviewed (CAN, ARCET, WorldFIP, Profibus and LonWorks). The Profibus and LonWorks solution are more extensively studies as a possible solution for the high voltage system of the TILE hadronic calorimeter. (authors).

  16. Beam polarization during a Siberian snake turn-on

    International Nuclear Information System (INIS)

    Anferov, Vladimir A.

    1999-01-01

    Installing Siberian snakes in a circular proton accelerator allows one to overcome all spin depolarizing resonances even at very high energies. However, Siberian snake application at low energies is technically rather difficult. Turning snake on at some energy during acceleration would allow using Siberian snakes even in rings with low injection energies. It is shown that the beam polarization would be preserved during the snake ramp, provided that the snake is turned on in more than ten turns, and the energy is set near a half-integer Gγ

  17. Turn me on! Using the “Internet of Things” to turn things on and off

    CSIR Research Space (South Africa)

    Butgereit, L

    2011-10-01

    Full Text Available to the Internet. There are many examples of things posting their status on Twitter and allowing uni-directional access. TurnMeOn is an example of allowing bidirectional access between people and things using Internet protocols. Users can query the status of a...

  18. Investigation on the energy spectrums of electrons in atmospheric pressure argon plasma jets and their dependences on the applied voltage

    Science.gov (United States)

    Chen, Xinxian; Tan, Zhenyu; Liu, Yadi; Li, Xiaotong; Pan, Jie; Wang, Xiaolong

    2017-08-01

    This work presents a systematical investigation on the spatiotemporal evolution of the energy spectrum of electrons in atmospheric pressure argon plasma jets and its dependence on the applied voltage. The investigations are carried out by means of the numerical simulation based on a particle-in-cell Monte-Carlo collision model. The characteristics of the spatiotemporal evolution of the energy spectrum of electrons (ESE) in the discharge space have been presented, and especially the mechanisms of inducing these characteristics have also been revealed. The present work shows the following conclusions. In the evolution of ESE, there is a characteristic time under each applied voltage. Before the characteristic time, the peak value of ESE decreases, the peak position shifts toward high energy, and the distribution of ESE becomes wider and wider, but the reverse is true after the characteristic time. The formation of these characteristics can be mainly attributed to the transport of electrons toward a low electric field as well as a balance between the energy gained from the electric field including the effect of space charges and the energy loss due to inelastic collisions in the process of electron transport. The characteristic time decreases with the applied voltage. In addition, the average energy of electrons at the characteristic time can be increased by enhancing the applied voltage. The results presented in this work are of importance for regulating and controlling the energy of electrons in the plasma jets applied to plasma medicine.

  19. An analog RF gap voltage regulation system for the Advanced Photon Source storage ring

    International Nuclear Information System (INIS)

    Horan, D.

    1999-01-01

    An analog rf gap voltage regulation system has been designed and built at Argonne National Laboratory to maintain constant total storage ring rf gap voltage, independent of beam loading and cavity tuning effects. The design uses feedback control of the klystron mod-anode voltage to vary the amount of rf power fed to the storage ring cavities. The system consists of two independent feedback loops, each regulating the combined rf gap voltages of eight storage ring cavities by varying the output power of either one or two rf stations, depending on the mode of operation. It provides full operator control and permissive logic to permit feedback control of the rf system output power only if proper conditions are met. The feedback system uses envelope-detected cavity field probe outputs as the feedback signal. Two different methods of combining the individual field probe signals were used to generate a relative DC level representing one-half of the total storage ring rf voltage, an envelope-detected vector sum of the field probe rf signals, and the DC sum of individual field probe envelope detector outputs. The merits of both methods are discussed. The klystron high-voltage power supply (HVPS) units are fitted with an analog interface for external control of the mod-anode voltage level, using a four-quadrant analog multiplier to modulate the HVPS mod-anode voltage regulator set-point in response to feedback system commands

  20. Summary of transient high-voltage calculations for the FRX-C experiment

    International Nuclear Information System (INIS)

    Kewish, R.W. Jr.; Rej, D.J.

    1982-06-01

    Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed

  1. Preliminary Modeling of Permanent Magnet Probe Flowmeter for Voltage Signal Estimation

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Uiju; Kim, Sung Joong [Hanyang Univ., Seoul (Korea, Republic of); Jeong, Ji Young; Kim, Tae Joon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    An experimental study on performance analysis of the flowmeter has been performed. The study shows that sodium flow rate is linearly proportional to the induced voltage signal from the flowmeter under the turbulent flow condition. The experimental results support its availability in the PDRC system. But, the flowmeter should be able to measure sodium flow at low Reynolds number as well. That is because the PDRC system uses sodium natural convection for its operation. Thus, calibration of the flowmeter should be done at very low sodium flow rates. However, Von Weissenfluh et al. showed that the relationship between flow rate and measured voltage signal from the flowmeter may become non-linear at very low flow rates. The nonlinearity restricts the utilization of level sensor which provide reference flow rate in the calibration experiment. The primary objective of this study is to predict the sodium flow rate range where the induced voltage signals are linearly proportional to flow rates by estimating the induced voltage signals against sodium flow rates for a wide range of flows numerically. A commercial code FLUENT is adopted for the analysis of flow field. And MAXWELL which is an electromagnetic analysis software using a finite volume method has been used to analyze the magnetic field generated by permanent magnet of the flowmeter. The induced voltage signals have been estimated by coupling the sodium flow field and the magnetic field using FLUENT MHD module. It is expected that the PMPF voltage signals are linearly proportional to flow rates range of 0.0059 to 1.96 lps. This suggests that simple calibration technique using the linearity between flow rate and the voltage signal can be adopted in calibration of the PMPF.

  2. Measurement and Modeling of Personal Exposure to the Electric and Magnetic Fields in the Vicinity of High Voltage Power Lines

    Directory of Open Access Journals (Sweden)

    Wafa Tourab

    2016-06-01

    Conclusion: We project to set own national standards for exposure to electromagnetic fields, in order to achieve a regional database that will be at the disposal of partners concerned to ensure safety of people and mainly workers inside high voltage electrical substations.

  3. Some effects of favorable and adverse electric fields on pool boiling in dielectric fluids

    International Nuclear Information System (INIS)

    Masson, Viviana

    2001-01-01

    The effects of the application of an electric field on pool boiling in dielectric fluids were studied in this work.Two different geometries were used: one which is favorable to the bubble detachment (favorable electric field) and other which attract the bubbles toward the heater (adverse electric field).In the favorable electric field experiments, the void fraction and impact rate were calculated from the measured indicator function.Those parameters were obtained varying the probe-heater distance and the power to the heater.The results show a reduction of the void fraction with increasing applied voltage, probably caused by the combination of the dielectrophoretic force and a smaller bubble size due to the electric field application. Also, the impact rate decreases when a voltage is applied and the heat fluxes are close to the critical heat flux (CHF).On the other hand, the impact rate increases with voltage for moderate heat fluxes.Another interesting result is the approximately exponential decay of the void fraction and impact rate with the distance to the heater. Both the void fraction and the impact rate grow with heat flux if the heat fluxes are moderate, with or without applied voltage.For highest heat fluxes the void fraction still grows with heat flux if there are no applied electric fields while decreases with heat flux when there is an applied voltage. Similar behavior is observed in the impact rate.The boiling regimes was measured with adverse electric fields using two techniques.The heat transfer in the nucleate boiling regime was measured on an electrically powered heater.The results in these experiments show a reduction in the CHF of 10 % for saturation conditions and 10 kV of applied voltage, and a reduction of up to 40 % for 20 oC of liquid subcooling.The boiling curve corresponding to the transition and film boiling was performed with quenching experiments.An increase in the heat flux was achieved when an electric field was applied in spite of the

  4. A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2008-01-01

    A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

  5. Voltage control on a train system

    Science.gov (United States)

    Gordon, Susanna P.; Evans, John A.

    2004-01-20

    The present invention provides methods for preventing low train voltages and managing interference, thereby improving the efficiency, reliability, and passenger comfort associated with commuter trains. An algorithm implementing neural network technology is used to predict low voltages before they occur. Once voltages are predicted, then multiple trains can be controlled to prevent low voltage events. Further, algorithms for managing inference are presented in the present invention. Different types of interference problems are addressed in the present invention such as "Interference During Acceleration", "Interference Near Station Stops", and "Interference During Delay Recovery." Managing such interference avoids unnecessary brake/acceleration cycles during acceleration, immediately before station stops, and after substantial delays. Algorithms are demonstrated to avoid oscillatory brake/acceleration cycles due to interference and to smooth the trajectories of closely following trains. This is achieved by maintaining sufficient following distances to avoid unnecessary braking/accelerating. These methods generate smooth train trajectories, making for a more comfortable ride, and improve train motor reliability by avoiding unnecessary mode-changes between propulsion and braking. These algorithms can also have a favorable impact on traction power system requirements and energy consumption.

  6. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    Science.gov (United States)

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  7. Voltage current characteristics of type III superconductors

    International Nuclear Information System (INIS)

    Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

    1980-01-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

  8. Voltage current characteristics of type III superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

    1980-06-01

    An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

  9. DC Voltage Control and Power-Sharing of Multi-Terminal DC Grids Based on Optimal DC Power Flow and Flexible Voltage Droop Strategy

    Directory of Open Access Journals (Sweden)

    F. Azma

    2015-06-01

    Full Text Available This paper develops an effective control framework for DC voltage control and power-sharing of multi-terminal DC (MTDC grids based on an optimal power flow (OPF procedure and the voltage-droop control. In the proposed approach, an OPF algorithm is executed at the secondary level to find optimal reference of DC voltages and active powers of all voltage-regulating converters. Then, the voltage droop characteristics of voltage-regulating converters, at the primary level, are tuned based on the OPF results such that the operating point of the MTDC grid lies on the voltage droop characteristics. Consequently, the optimally-tuned voltage droop controller leads to the optimal operation of the MTDC grid. In case of variation in load or generation of the grid, a new stable operating point is achieved based on the voltage droop characteristics. By execution of a new OPF, the voltage droop characteristics are re-tuned for optimal operation of the MTDC grid after the occurrence of the load or generation variations. The results of simulation on a grid inspired by CIGRE B4 DC grid test system demonstrate efficient grid performance under the proposed control strategy.

  10. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

    Science.gov (United States)

    Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

    2016-11-14

    Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

  11. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    OpenAIRE

    Xin-Bing Cheng; Jin-Liang Liu; Hong-Bo Zhang; Zhi-Qiang Hong; Bao-Liang Qian

    2011-01-01

    The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the fla...

  12. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Science.gov (United States)

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

  13. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  14. High voltage investigations for ITER coils

    International Nuclear Information System (INIS)

    Fink, S.; Fietz, W.H.

    2006-01-01

    The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

  15. A design for a high voltage magnet coil ringer test set

    International Nuclear Information System (INIS)

    Koska, W.; Sims, R.E.

    1992-04-01

    By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ''ring'' the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed

  16. Fundamental properties of field emission-driven direct current microdischarges

    International Nuclear Information System (INIS)

    Rumbach, Paul; Go, David B.

    2012-01-01

    For half a century, it has been known that the onset of field emission in direct current microdischarges with gap sizes less than 10 μm can lead to breakdown at applied voltages far less than predicted by Paschen's law. It is still unclear how field emission affects other fundamental plasma properties at this scale. In this work, a one-dimensional fluid model is used to predict basic scaling laws for fundamental properties including ion density, electric field due to space charge, and current-voltage relations in the pre-breakdown regime. Computational results are compared with approximate analytic solutions. It is shown that field emission provides an abundance of cathode electrons, which in turn create large ion concentrations through ionizing collisions well before Paschen's criterion for breakdown is met. Breakdown due to ion-enhanced field emission occurs when the electric field due to space charge becomes comparable to the applied electric field. Simple scaling analysis of the 1D Poisson equation demonstrates that an ion density of n + ≈ 0.1V A ε 0 /qd 2 is necessary to significantly distort the electric field. Defining breakdown in terms of this critical ion density leads analytically to a simple, effective secondary emission coefficient γ ′ of the same mathematical form initially suggested by Boyle and Kisliuk [Phys. Rev. 97, 255 (1955)].

  17. Suppression of m = 0 in a RFP by toroidal field coils

    International Nuclear Information System (INIS)

    Alexander, D.; Robertson, S.

    1993-01-01

    The Reversatron RFP is normally operated with the toroidal field coils connected in series. The time-integrated voltage applied to the circuit determines the sum of the fluxes linking each turn but not the flux within each turn. Each winding may have a different flux determined by the external drive and by currents within the plasma. A parallel connection of the field coils results in the flux within each coil being determined by the volt-seconds applied to the windings; thus the toroidal flux is the same within each coil. This configuration suppresses any toroidal variation in the toroidal flux and effectively reduces the level of the m = 0 component of the radial field. The m = 0 fluctuations are expected to arise due to nonlinear coupling of the m = 1 modes. A parallel connection of field coils is impractical due to the low impedance required for driving the coils. The authors have tested the effect of parallel connected coils by adding an auxiliary set of 36 coils. These are connected in parallel but are not connected to any supply. The toroidal flux is generated by the series-connected coils which generate voltage but not current in the parallel-connected coils. With the auxiliary coils, the discharge duration is increased from 500 to 550 μsec, the plasma current is increased from 50 kA to 60 kA, F is more negative, Θ is larger, and there is less shot-to-shot variation in the discharges. The m = 0 fluctuations measured by 43 surface coils are, however, only slightly reduced

  18. Possibility of persistent voltage observation in a system of asymmetric superconducting rings

    International Nuclear Information System (INIS)

    Burlakov, A.A.; Gurtovoi, V.L.; Ilin, A.I.; Nikulov, A.V.; Tulin, V.A.

    2012-01-01

    The possibility of observing persistent voltage in superconducting rings of different arm widths is experimentally investigated. It was previously found that switching of the arms between superconducting and normal states by an AC current induces DC voltage oscillation in the magnetic field with a period corresponding to the flux quantum inside the ring. We used systems with a large number of asymmetric rings connected in series to investigate the possibility of observing this quantum phenomenon near the superconducting transition, where thermal fluctuations lead to switching of ring segments without an external influence and the persistent current is much smaller than in the superconducting state. -- Highlights: ► A possibility to observe the persistent voltage is investigated experimentally. ► The persistent voltage is a DC voltage observed at thermodynamic equilibrium. ► It oscillates in magnetic field like the persistent current in superconducting ring. ► The period of the oscillations corresponds to the flux quantum inside the ring. ► The quantum oscillations of the DC voltage were observed on asymmetric rings.

  19. The influence of anatomical and physiological parameters on the interference voltage at the input of unipolar cardiac pacemakers in low frequency electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Joosten, S; Pammler, K; Silny, J [Research Center for Bioelectromagnetic Interaction (FEMU), University Hospital, Aachen University (Germany)], E-mail: joosten@femu.rwth-aachen.de

    2009-02-07

    The problem of electromagnetic interference of electronic implants such as cardiac pacemakers has been well known for many years. An increasing number of field sources in everyday life and occupational environment leads unavoidably to an increased risk for patients with electronic implants. However, no obligatory national or international safety regulations exist for the protection of this patient group. The aim of this study is to find out the anatomical and physiological worst-case conditions for patients with an implanted pacemaker adjusted to unipolar sensing in external time-varying electric fields. The results of this study with 15 volunteers show that, in electric fields, variation of the interference voltage at the input of a cardiac pacemaker adds up to 200% only because of individual factors. These factors should be considered in human studies and in the setting of safety regulations.

  20. The influence of anatomical and physiological parameters on the interference voltage at the input of unipolar cardiac pacemakers in low frequency electric fields

    International Nuclear Information System (INIS)

    Joosten, S; Pammler, K; Silny, J

    2009-01-01

    The problem of electromagnetic interference of electronic implants such as cardiac pacemakers has been well known for many years. An increasing number of field sources in everyday life and occupational environment leads unavoidably to an increased risk for patients with electronic implants. However, no obligatory national or international safety regulations exist for the protection of this patient group. The aim of this study is to find out the anatomical and physiological worst-case conditions for patients with an implanted pacemaker adjusted to unipolar sensing in external time-varying electric fields. The results of this study with 15 volunteers show that, in electric fields, variation of the interference voltage at the input of a cardiac pacemaker adds up to 200% only because of individual factors. These factors should be considered in human studies and in the setting of safety regulations.

  1. Measurement of quasi-static and low frequency electric fields on the Viking satellite

    International Nuclear Information System (INIS)

    Block, L.P.; Faelthammar, C.G.; Lindqvist, P.A.; Marklund, G.T.; Mozer, F.S.; Pedersen, A.

    1987-03-01

    The instrument for measurement of quasi-static and low frequency (dc and slow varying) electric fields on the Viking satellite is described. The instrument uses three spherical probe pairs to measure the full three-dimensional electric field vector with 18.75 ms time resolution. The probes are kept near plasma potential by means of a controllable bias current. A guard covering part of the booms is biased to a negative voltage to prevent photoelectrons escaping from the probes from reaching the satellite body. Current-voltage sweeps are performed to determine the plasma density and temperature and to select the optimal bias current. The bias currents to the probes and the voltage offset on the guards as well as the current-voltage sweeps are controlled by an on-board microprocessor which can be programmed from the ground and allows great flexibility. (authors)

  2. Liquid methanol under a static electric field

    Energy Technology Data Exchange (ETDEWEB)

    Cassone, Giuseppe, E-mail: giuseppe.cassone@impmc.upmc.fr [Sorbonne Universités, UPMC Univ Paris 06, UMR 7590, IMPMC, F-75005 Paris (France); CNRS, UMR 7590, IMPMC, F-75005 Paris (France); Università degli Studi di Messina, Dipartimento di Fisica e di Scienze della Terra, Contrada Papardo, 98166 Messina (Italy); CNR-IPCF, Viale Ferdinando Stagno d’Alcontres 37, 98158 Messina (Italy); Giaquinta, Paolo V., E-mail: paolo.giaquinta@unime.it [Università degli Studi di Messina, Dipartimento di Fisica e di Scienze della Terra, Contrada Papardo, 98166 Messina (Italy); Saija, Franz, E-mail: saija@ipcf.cnr.it [CNR-IPCF, Viale Ferdinando Stagno d’Alcontres 37, 98158 Messina (Italy); Saitta, A. Marco, E-mail: marco.saitta@impmc.upmc.fr [Sorbonne Universités, UPMC Univ Paris 06, UMR 7590, IMPMC, F-75005 Paris (France); CNRS, UMR 7590, IMPMC, F-75005 Paris (France)

    2015-02-07

    We report on an ab initio molecular dynamics study of liquid methanol under the effect of a static electric field. We found that the hydrogen-bond structure of methanol is more robust and persistent for field intensities below the molecular dissociation threshold whose value (≈0.31 V/Å) turns out to be moderately larger than the corresponding estimate obtained for liquid water. A sustained ionic current, with ohmic current-voltage behavior, flows in this material for field intensities above 0.36 V/Å, as is also the case of water, but the resulting ionic conductivity (≈0.40 S cm{sup −1}) is at least one order of magnitude lower than that of water, a circumstance that evidences a lower efficiency of proton transfer processes. We surmise that this study may be relevant for the understanding of the properties and functioning of technological materials which exploit ionic conduction, such as direct-methanol fuel cells and Nafion membranes.

  3. Characteristics of MAO coating obtained on ZK60 Mg alloy under two and three steps voltage-increasing modes in dual electrolyte

    Science.gov (United States)

    Yang, Jun; Wang, Ze-Xin; Lu, Sheng; Lv, Wei-gang; Jiang, Xi-zhi; Sun, Lei

    2017-03-01

    The micro-arc oxidation process was conducted on ZK60 Mg alloy under two and three steps voltage-increasing modes by DC pulse electrical source. The effect of each mode on current-time responses during MAO process and the coating characteristic were analysed and discussed systematically. The microstructure, thickness and corrosion resistance of MAO coatings were evaluated by scanning electron microscopy (SEM), energy disperse spectroscopy (EDS), microscope with super-depth of field and electrochemical impedance spectroscopy (EIS). The results indicate that two and three steps voltage-increasing modes can improve weak spark discharges with insufficient breakdown strength in later period during the MAO process. Due to higher value of voltage and voltage increment, the coating with maximum thickness of about 20.20μm formed under two steps voltage-increasing mode shows the best corrosion resistance. In addition, the coating fabricated under three steps voltage-increasing mode shows a smoother coating with better corrosion resistance due to the lower amplitude of voltage-increasing.

  4. SVC or VSC for reduction of voltage sags and flicker. Trends in power electronics

    Energy Technology Data Exchange (ETDEWEB)

    Haeusler, M; Schnettler, A [ABB Calor Emag Schaltanlagen AG, Mannheim (Germany); Halvarsson, P [ABB Power Systems AB, Vaesteraas (Sweden)

    1997-07-01

    In the past complaints about insufficient power quality were often caused by flicker observed in the neighbourhood of industrial networks. Voltage sags due to faults in the power system pass, however, mostly unnoticed as not-so-common events. Now electronic controls are penetrating more and more in industry. Electronic controllers on factory machines - particularly those for variable speed motors - are vulnerable to voltage sags. A one-tenth second sag can cause a $200.000 downtime incident in a big factory. Therefore the demands on power quality are rising in industry as well. The costly separation in clean networks for residential areas and dirty networks for industrial grids is no perfect solution to avoid such problems. Static VAr Compensators (SVC) are traditionally one means to control the voltage in industrial networks. Because of the recent development of powerful gate turn-off semiconductor devices another type of converter has gained new interest for mitigation of system disturbances, the voltage-source converter (VSC). The characteristics of both types of power electronics in view of their possibilities for this application are presented. (orig.)

  5. High Voltage in Noble Liquids for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Rebel, B. [Fermilab; Bernard, E. [Yale U.; Faham, C. H. [LBL, Berkeley; Ito, T. M. [Los Alamos; Lundberg, B. [Maryland U.; Messina, M. [Columbia U.; Monrabal, F. [Valencia U., IFIC; Pereverzev, S. P. [LLNL, Livermore; Resnati, F. [Zurich, ETH; Rowson, P. C. [SLAC; Soderberg, M. [Fermilab; Strauss, T. [Bern U.; Tomas, A. [Imperial Coll., London; Va' vra, J. [SLAC; Wang, H. [UCLA

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  6. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  7. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  8. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

    2016-02-01

    Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

  9. CONTRIBUTIONS OF INTRACELLULAR IONS TO Kv CHANNEL VOLTAGE SENSOR DYNAMICS.

    Directory of Open Access Journals (Sweden)

    Samuel eGoodchild

    2012-06-01

    Full Text Available Voltage sensing domains of Kv channels control ionic conductance through coupling of the movement of charged residues in the S4 segment to conformational changes at the cytoplasmic region of the pore domain, that allow K+ ions to flow. Conformational transitions within the voltage sensing domain caused by changes in the applied voltage across the membrane field are coupled to the conducting pore region and the gating of ionic conductance. However, several other factors not directly linked to the voltage dependent movement of charged residues within the voltage sensor impact the dynamics of the voltage sensor, such as inactivation, ionic conductance, intracellular ion identity and block of the channel by intracellular ligands. The effect of intracellular ions on voltage sensor dynamics is of importance in the interpretation of gating current measurements and the physiology of pore/voltage sensor coupling. There is a significant amount of variability in the reported kinetics of voltage sensor deactivation kinetics of Kv channels attributed to different mechanisms such as open state stabilization, immobilization and relaxation processes of the voltage sensor. Here we separate these factors and focus on the causal role that intracellular ions can play in allosterically modulating the dynamics of Kv voltage sensor deactivation kinetics. These considerations are of critical importance in understanding the molecular determinants of the complete channel gating cycle from activation to deactivation.

  10. 30 CFR 75.705-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground; (b...

  11. Environmental and biotechnological applications of high-voltage pulsed discharges in water

    International Nuclear Information System (INIS)

    Sato, Masayuki

    2008-01-01

    A high-voltage pulse has wide application in fields such as chemistry, physics and biology and their combinations. The high-voltage pulse forms two kinds of physical processes in water, namely (a) a pulsed electric field (PEF) in the parallel electrode configuration and (b) plasma generation by a pulsed discharge in the water phase with a concentrated electric field. The PEF can be used for inactivation of bacteria in liquid foods as a non-thermal process, and the underwater plasma is applicable not only for the decomposition of organic materials in water but also for biological treatment of wastewater. These discharge states are controlled mainly by the applied pulse voltage and the electrode shape. Some examples of environmental and biotechnological applications of a high-voltage pulse are reviewed.

  12. On the mechanism of high-voltage discharge initiation in high-voltage accelerator accelerating tubes

    International Nuclear Information System (INIS)

    Zheleznikov, F.G.

    1983-01-01

    Experimental investigation into physical natupe of discharge processes in high-voltage accelerator accelerating tubes in the absence of the accelerated particle beam are conducted. The installation for the study of the mechanism of initiating vacuum isolation conductivity is used in the experiments. The vacuum chamber of the installation is made of steel and sealed with rubber packings. Electrodes 300-360 mm in diameter are made of stainless steel. Two variants of cleaning technology were used before electrode assembling: 1) degreasing by organic solvents; 2) cleaning by fine grinding cloth with successive washing by rectificated alcohol. Analysis of the obtained data shows that forma. tion of background flux of charged particles in interelectrode gap is caused by external photoelectric effect, excited by X radiation, which initiates the formation of intensive internal field in microfilms of non-conducting impurities on the electrode surfaces. The secondary electron emission plays the minor role at that

  13. Elimination of image flicker in a fringe-field switching liquid crystal display by applying a bipolar voltage wave.

    Science.gov (United States)

    Oh, Seung-Won; Park, Jun-Hee; Lee, Ji-Hoon; Yoon, Tae-Hoon

    2015-09-07

    Recently, low-frequency driving of liquid crystal display (LCD) panels to minimize power consumption has drawn much attention. In the case in which an LCD panel is driven by a fringe-field at a low frequency, the image flickering phenomenon occurs when the sign of the applied electric field is reversed. We investigated image flickering induced by the flexoelectric effect in a fringe-field switching (FFS) liquid crystal cell in terms of the transmittance difference between frames and the ripple phenomenon. Experimental results show that image flicker due to transmittance difference can be eliminated completely and that the ripple phenomena can be reduced significantly by applying a bipolar voltage wave to the FFS cell.

  14. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  15. Vacuum arc behavior and its voltage characteristics in drawing process controlled by composite magnetic fields along axial and transverse directions

    International Nuclear Information System (INIS)

    Wang, Lijun; Deng, Jie; Wang, Haijing; Jia, Shenli; Qin, Kang; Shi, Zongqian

    2015-01-01

    In this research, drawing vacuum arc (VA) experiments were conducted using composite contacts under currents ranging from 5 kA to 20 kA root mean square (rms). The new type of contact comprised an axial magnetic field (AMF) configuration and a transverse magnetic field (TMF) configuration. The TMF plate was in the center, surrounded by the AMF plate. The contact generated both AMFs and TMFs simultaneously. VA appearances and arc voltages were recorded, and the VA was modeled as a conductor for electromagnetic force analysis in ANSYS software. The results showed that the coaxiality of operating mechanisms significantly influenced arc behavior just as the arc was ignited. When arc brightness did not increase after ignition, there was a voltage drop accompanied with diffusion of the VA. As to VA development, when an arc was ignited on an AMF plate, it spread on the plate and rotated. Over time the arc current increased, the constricting arc forms, and the arc column rotated on the TMF plate under the action of Ampere's force. With regard to the influence of a magnetic field on a VA at different stages, in the initial drawing arc stage the TMF was dominant, and the arc started to rotate under the action of Ampere's force. Afterwards, the AMF was dominant, with a steadily burning arc. As for contact melting, in the initial arcing period, a contracted short arc caused severe melting and erosion of the contact plate. When the ignition spot or root was close to the slot of plate, the electromagnetic force pushed the arc toward slot and contact edge, resulting in local erosion of the slot region

  16. Practical experience in the determination of the tube voltage using the Ardran-Crooks cassette

    International Nuclear Information System (INIS)

    Ewen, K.; Roesner, W.

    1984-01-01

    Within the framework of quality control measures in X-ray diagnostics and therapy, it is desirable to employ for the determination of tube voltage (e.g. in diagnostic X-ray equipment) methods which are as economical as possible while saving time and being simple to apply in spite of the fact that they are as highly accurate as ever possible. The absorber method described here, represented by the Ardran-Crooks cassette, possesses the advantage of low price and easy application. However, if it is operated in such a way that time is saved (assessment by the eye), it is not so accurate, whereas in accurate operation (assessment via luxmeter) it does require a relatively large amount of time. After the film has been exposed, it is necessary to estimate or measure the agreement of blackenings on one and the same film in order to determine the tube voltage. This voltage is then read off by means of a calibration curve. The error in the determination of the tube voltage via the Ardran-Crooks cassette depends on the accuracy of the calibration curve, which, in turn, depends on the number of measurements performed when producing the curve, and on the correct voltage of the standard X-ray equipment used in producing the calibration curve. In addition, assessment by eye adds a total error of 2.3% to 8%, depending on the amount of tube voltage. If the luxmeter is used instead of the eye, this additional error is less than 1% in relation to the magnitude of the tube voltage. (orig./BWU) [de

  17. Simulation of temperature field for temperature-controlled radio frequency ablation using a hyperbolic bioheat equation and temperature-varied voltage calibration: a liver-mimicking phantom study.

    Science.gov (United States)

    Zhang, Man; Zhou, Zhuhuang; Wu, Shuicai; Lin, Lan; Gao, Hongjian; Feng, Yusheng

    2015-12-21

    This study aims at improving the accuracy of temperature simulation for temperature-controlled radio frequency ablation (RFA). We proposed a new voltage-calibration method in the simulation and investigated the feasibility of a hyperbolic bioheat equation (HBE) in the RFA simulation with longer durations and higher power. A total of 40 RFA experiments was conducted in a liver-mimicking phantom. Four mathematical models with multipolar electrodes were developed by the finite element method in COMSOL software: HBE with/without voltage calibration, and the Pennes bioheat equation (PBE) with/without voltage calibration. The temperature-varied voltage calibration used in the simulation was calculated from an experimental power output and temperature-dependent resistance of liver tissue. We employed the HBE in simulation by considering the delay time τ of 16 s. First, for simulations by each kind of bioheat equation (PBE or HBE), we compared the differences between the temperature-varied voltage-calibration and the fixed-voltage values used in the simulations. Then, the comparisons were conducted between the PBE and the HBE in the simulations with temperature-varied voltage calibration. We verified the simulation results by experimental temperature measurements on nine specific points of the tissue phantom. The results showed that: (1) the proposed voltage-calibration method improved the simulation accuracy of temperature-controlled RFA for both the PBE and the HBE, and (2) for temperature-controlled RFA simulation with the temperature-varied voltage calibration, the HBE method was 0.55 °C more accurate than the PBE method. The proposed temperature-varied voltage calibration may be useful in temperature field simulations of temperature-controlled RFA. Besides, the HBE may be used as an alternative in the simulation of long-duration high-power RFA.

  18. A new approach to voltage sag detection based on wavelet transform

    Energy Technology Data Exchange (ETDEWEB)

    Gencer, Oezguer; Oeztuerk, Semra; Erfidan, Tarik [Kocaeli University, Faculty of Engineering, Department of Electrical Engineering, Veziroglu Kampuesue, Eski Goelcuek Yolu, Kocaeli (Turkey)

    2010-02-15

    In this work, a new voltage sag detection method based on wavelet transform is developed. Voltage sag detection algorithms, so far have proved their efficiency and computational ability. Using several windowing techniques take long computational times for disturbance detection. Also researchers have been working on separating voltage sags from other voltage disturbances for the last decade. Due to increasing power quality standards new high performance disturbance detection algorithms are necessary to obtain high power quality standards. For this purpose, the wavelet technique is used for detecting voltage sag duration and magnitude. The developed voltage sag detection algorithm is implemented with high speed microcontroller. Test results show that, the new approach provides very accurate and satisfactory voltage sag detection. (author)

  19. Lightning-induced overvoltages in low-voltage systems

    Energy Technology Data Exchange (ETDEWEB)

    Hoeidalen, Hans Kristian

    1997-12-31

    Lightning-induced overvoltages (LIOs) are a main source of failures in low-voltage overhead line systems. This thesis deals mainly with calculations of LIOs aiming to enable the design of a proper voltage protection. Models for calculation of LIOs are adapted from the literature or developed based on measurements. The models used are believed to be fairly accurate for the first few microseconds, which is usually sufficient for predicting the maximum induced voltage in the system. The lightning channel is modelled by the Modified Transmission Line (MTL) model with the Transmission Line (TL) model as a special case. The coupling between the electrical fields from a lightning channel and an overhead line is modelled by Agrawal`s model. The attenuation of electrical fields over a lossy ground is modelled by Norton`s- or the Surface Impedance methods. The validity of all the applied models is analysed. In addition, measurements have been performed in order to develop models of distribution transformers and low-voltage power installation (LVPI) networks. Simple models of typical transformers and LVPIs are developed for calculations when specific data are unavailable. The practical range of values and its influence on the LIOs in a system is investigated. The main frequency range of interest related to LIOs is 10 kHz - 1 MHz in which all the models are accurate. The adapted or developed models are used to calculate LIOs in low-voltage systems. The influence of various key parameters in the system is investigated. Most important are the return stroke amplitude and rise time, the overhead line height and location, the termination of overhead line segments, neutral grounding, and the ground conductivity. 135 refs., 136 figs., 12 tabs.

  20. Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

    Science.gov (United States)

    Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

    2017-06-01

    The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

  1. Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

    Science.gov (United States)

    Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

    2014-03-01

    The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

  2. Enhanced field emission from PbTiO{sub 3} nanodots prepared by phase separation approach

    Energy Technology Data Exchange (ETDEWEB)

    Li Jinna; Luo Ming [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Weng Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Cheng Kui; Du Piyi; Shen Ge; Han Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2009-10-15

    Uniformly distributed PbTiO{sub 3} nanodots were successfully prepared by phase separation approach. A precursor sol film was first spin-coated on Si wafer and then spontaneously separated into two distinct phases owing to the Marangoni instability. PT nanodots with tailorable size and density were obtained after further heat treatment. X-ray diffraction analysis indicated that these nanodots showed a perovskite structure. An excellent room temperature field emission property of PbTiO{sub 3} nanodots was observed: the minimum turn-on voltage was about 5.3 V/{mu}m; while the emission current density reached about 270 {mu}A cm{sup -2} at an applied field of about 9.25 V/{mu}m.

  3. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  4. Electric-field induced surface instabilities of soft dielectrics and their effects on optical transmittance and scattering

    Science.gov (United States)

    Shian, Samuel; Kjeer, Peter; Clarke, David R.

    2018-03-01

    When a voltage is applied to a percolative, mechanically compliant mat of carbon nanotubes (CNTs) on a smooth elastomer bilayer attached to an ITO coated glass substrate, the in-line optical transmittance decreases with increasing voltage. Two regimes of behavior have been identified based on optical scattering, bright field optical microscopy, and confocal optical microscopy. In the low field regime, the electric field produces a spatially inhomogeneous surface deformation of the elastomer that causes local variations in optical refraction and modulates the light transmittance. The spatial variation is associated with the distribution of the CNTs over the surface. At higher fields, above a threshold voltage, an array of pits in the surface form by a nucleation and growth mechanism and these also scatter light. The formation of pits, and creases, in the thickness of the elastomer, is due to a previously identified electro-mechanical surface instability. When the applied voltage is decreased from its maximum, the transmittance returns to its original value although there is a transmittance hysteresis and a complicated time response. When the applied voltage exceeds the threshold voltage, there can be remnant optical contrast associated with creasing of the elastomer and the recovery time appears to be dependent on local jamming of CNTs in areas where the pits formed. A potential application of this work as an electrically tunable privacy window or camouflaging devices is demonstrated.

  5. The Effect of a Textured Insole on Symmetry of Turning

    Directory of Open Access Journals (Sweden)

    Etem Curuk

    2018-01-01

    Full Text Available Turning while walking is a common daily activity. Individuals with unilateral impairment frequently perform turns asymmetrically. The purpose of the study was to investigate the effect of a discomfort-inducing textured insole on symmetry of turning. Nine healthy individuals performed turns to the right while walking with no insole, immediately after the insole was inserted in the right shoe, and after walking for six minutes with the insole. The duration of turning, displacements of pelvic markers, and perceived level of discomfort were evaluated. Utilizing the insole was associated with the increased level of perceived discomfort (p<0.05. Moreover, using the insole was linked to changes in the displacement of two pelvic markers and larger asymmetry index while turning immediately after the insole was inserted in the right shoe as compared to no insole condition (p<0.05. The duration of right turning increased immediately after the insole was inserted (p<0.05 and after walking with the insole for six minutes. The results indicate that the textured insole creates asymmetry of turning in healthy individuals. The outcome provides a background for future studies focused on using a textured insole to minimize the asymmetry of turning commonly seen in individuals with unilateral impairment.

  6. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  7. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  8. Spectrum analysis of a voltage source converter due to semiconductor voltage drops

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg; Eltouki, Mustafa

    2017-01-01

    It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

  9. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  10. New perspectives in vacuum high voltage insulation. II. Gas desorption

    CERN Document Server

    Diamond, W T

    1998-01-01

    An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

  11. Detection of inter-turn faults in transformer winding using the capacitor discharge method

    Science.gov (United States)

    Michna, Michał; Wilk, Andrzej; Ziółko, Michał; Wołoszyk, Marek; Swędrowski, Leon; Szwangruber, Piotr

    2017-12-01

    The paper presents results of an analysis of inter-turn fault effects on the voltage and current waveforms of a capacitor discharge through transformer windings. The research was conducted in the frame of the Facility of Antiproton and Ion Research project which goal is to build a new international accelerator facility that utilizes superconducting magnets. For the sake of electrical quality assurance of the superconducting magnet circuits, a measurement and diagnostic system is currently under development at Gdansk University of Technology (GUT). Appropriate measurements and simulations of the special transformer system were performed to verify the proposed diagnostic method. In order to take into account the nonlinearity and hysteresis of the magnetic yoke, a novel mathematical model of the transformer was developed. A special test bench was constructed to emulate the inter-turn faults within transformer windings.

  12. Detection of inter-turn faults in transformer winding using the capacitor discharge method

    Directory of Open Access Journals (Sweden)

    Michna Michał

    2017-12-01

    Full Text Available The paper presents results of an analysis of inter-turn fault effects on the voltage and current waveforms of a capacitor discharge through transformer windings. The research was conducted in the frame of the Facility of Antiproton and Ion Research project which goal is to build a new international accelerator facility that utilizes superconducting magnets. For the sake of electrical quality assurance of the superconducting magnet circuits, a measurement and diagnostic system is currently under development at Gdansk University of Technology (GUT. Appropriate measurements and simulations of the special transformer system were performed to verify the proposed diagnostic method. In order to take into account the nonlinearity and hysteresis of the magnetic yoke, a novel mathematical model of the transformer was developed. A special test bench was constructed to emulate the inter-turn faults within transformer windings.

  13. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  14. Choice of operating voltage for a transmission electron microscope

    International Nuclear Information System (INIS)

    Egerton, R.F.

    2014-01-01

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  15. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  16. Analysis of Planar E+I and ER+I Transformers for Low-Voltage High-Current DC/DC Converters with Focus on Winding Losses and Leakage Inductance

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Ouyang, Ziwei

    2012-01-01

    on winding resistance and leakage inductances which represent the main concerns related to low-voltage high-current applications. The PCB winding design has a one to one turn ratio with no interleaving between primary and secondary windings. The main goal was to determine if ER planar core could provide...... a significant advantage in terms of winding losses compared to planar E cores. Results from finite element analysis highlight that low frequency winding resistance is lower for the ER core since it is dominated by the lower mean turn length however, as the AC-resistance becomes dominating the winding eddy...... more realistic results when computing the winding AC-resistance....

  17. High Voltage Design Considerations for the Electrostatic Septum for the Mu2e Beam Resonant

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez, Matthew L. [Fermilab; Jensen, C.; Morris, D.; Nagaslaev, V.; Pham, H.; Tinsley, D.

    2018-04-01

    aTwo electrostatic septa (ESS) are being designed for the slow extraction of 8GeV proton beam for the Mu2e experiment at Fermilab. Special attention is given to the high voltage components that affect the performance of the septa. The components under consideration are the high voltage (HV) feedthrough, cathode standoff (CS), and clearing electrode ceramic standoffs (CECS). Previous experience with similar HV systems at Fermilab was used to define the evaluation criteria of the design of the high voltage components. Using electric field simulation software, high E-field intensities on the components and integrated field strength along the surface of the dielectric material were minimized. Here we discuss the limitations found and improvements made based on those studies.

  18. On Secondary Control Approaches for Voltage Regulation in DC Microgrids

    DEFF Research Database (Denmark)

    Peyghami Akhuleh, Saeed; Mokhtari, Hossein; Davari, Pooya

    2017-01-01

    Centralized or decentralized secondary controller is commonly employed to regulate the voltage drop raised by the primary controller. However, in the case of high capacity MGs and long feeders with much voltage drop on the line resistances, the conventional methods may not guarantee the voltage...

  19. A novel TFS-IGBT with a super junction floating layer

    International Nuclear Information System (INIS)

    Ye Jun; Fu Daping; Luo Bo; Zhao Yuanyuan; Qiao Ming; Zhang Bo

    2010-01-01

    A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (V F ) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, V F is decreased by 0.33 V(at 100 A/cm 2 ) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.

  20. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  1. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

    2010-01-01

    This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai

    2017-01-01

    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

  3. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    Directory of Open Access Journals (Sweden)

    Nick Baker

    2017-03-01

    Full Text Available In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal—known as a kelvin-source terminal—is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs, it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

  4. Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

    Energy Technology Data Exchange (ETDEWEB)

    Chuan, Lee Te, E-mail: gd130079@siswa.uthm.edu.my; Rathi, Muhammad Fareez Mohamad, E-mail: cd110238@siswa.uthm.edu.my; Abidin, Muhamad Yusuf Zainal, E-mail: cd110221@siswa.uthm.edu.my; Abdullah, Hasan Zuhudi, E-mail: hasan@uthm.edu.my; Idris, Maizlinda Izwana, E-mail: izwana@uthm.edu.my [Faculty of Mechanical and Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2015-07-22

    Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm{sup −2}) at room temperature. Surface oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.

  5. Influence of surface losses and the self-pumping effect on current-voltage characteristics of a long Josephson junction

    DEFF Research Database (Denmark)

    Pankratov, A.L.; Sobolev, A.S.; Koshelets, V.P.

    2007-01-01

    We have numerically investigated the dynamics of a long linear Josephson tunnel junction with overlap geometry. Biased by a direct current (dc) and an applied dc magnetic field, the junction has important applications as tunable high frequency oscillator [flux-flow oscillator (FFO......) placed at both ends of the FFO. In our model, the damping parameter depends both on the spatial coordinate and on the amplitude of the ac voltage. In order to find the dc current-voltage curves, the damping parameter has to be calculated self-consistently by successive approximations and time integration...

  6. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

    International Nuclear Information System (INIS)

    Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

    2009-01-01

    A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10 -18 F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear ΔC gate-source/drain -V gate response of FETs is utilized to determine the inversion layer capacitance (C inv ) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C inv = 60 aF.

  7. Experimental investigations on the effect of process parameters with the use of minimum quantity solid lubrication in turning

    Science.gov (United States)

    Makhesana, Mayur A.; Patel, K. M.; Mawandiya, B. K.

    2018-04-01

    Turning process is a very basic process in any field of mechanical application. During turning process, most of the energy is converted into heat because of the friction between work piece and tool. Heat generation can affect the surface quality of the work piece and tool life. To reduce the heat generation, Conventional Lubrication process is used in most of the industry. Minimum quantity lubrication has been an effective alternative to improve the performance of machining process. In this present work, effort has been made to study the effect of various process parameters on the surface roughness and power consumption during turning of EN8 steel material. Result revealed the effect of depth of cut and feed on the obtained surface roughness value. Further the effect of solid lubricant has been also studied and optimization of process parameters is also done for the turning process.

  8. On Secondary Control Approaches for Voltage Regulation in DC Microgrids

    DEFF Research Database (Denmark)

    Peyghami, Saeed; Mokhtari, Hossein; Davari, Pooya

    2017-01-01

    Centralized or decentralized secondary controller is commonly employed to regulate the voltage drop raised by the primary controller. However, in the case of high capacity MGs and long feeders with much voltage drop on the line resistances, the conventional methods may not guarantee the voltage r...

  9. Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

    Science.gov (United States)

    BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.; hide

    2012-01-01

    The field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain, and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and field strength. In all cases, field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a field strength of 18:7 MV/m.

  10. Induced Voltages Ratio-Based Algorithm for Fault Detection, and Faulted Phase and Winding Identification of a Three-Winding Power Transformer

    Directory of Open Access Journals (Sweden)

    Byung Eun Lee

    2014-09-01

    Full Text Available This paper proposes an algorithm for fault detection, faulted phase and winding identification of a three-winding power transformer based on the induced voltages in the electrical power system. The ratio of the induced voltages of the primary-secondary, primary-tertiary and secondary-tertiary windings is the same as the corresponding turns ratio during normal operating conditions, magnetic inrush, and over-excitation. It differs from the turns ratio during an internal fault. For a single phase and a three-phase power transformer with wye-connected windings, the induced voltages of each pair of windings are estimated. For a three-phase power transformer with delta-connected windings, the induced voltage differences are estimated to use the line currents, because the delta winding currents are practically unavailable. Six detectors are suggested for fault detection. An additional three detectors and a rule for faulted phase and winding identification are presented as well. The proposed algorithm can not only detect an internal fault, but also identify the faulted phase and winding of a three-winding power transformer. The various test results with Electromagnetic Transients Program (EMTP-generated data show that the proposed algorithm successfully discriminates internal faults from normal operating conditions including magnetic inrush and over-excitation. This paper concludes by implementing the algorithm into a prototype relay based on a digital signal processor.

  11. Voltage sags: Their impact on the utility and industrial customers

    International Nuclear Information System (INIS)

    Davis, T.; Beam, G.E.; Melhorn, C.J.

    1995-01-01

    This paper describes the impact of voltage sags on the utility and industrial customers. Several utility measures are presented to minimize the customer's exposure to voltage sags. However, these measures cannot completely eliminate the impact of voltage sags on sensitive equipment. A case study is presented in this paper that includes measurement results that were used to characterize the voltage sags experienced on the utility system and in the industrial facility, simulation results that were used to develop area of vulnerability curves for the industrial facility, mitigation equipment that was employed to improve the sensitive equipment's ride through capability, and the lessons learned from the systems approach analysis

  12. The monitoring results of electromagnetic radiation of 110-kV high-voltage lines in one urban location in Chongqing P.R. China.

    Science.gov (United States)

    Qin, Qi-Zhong; Chen, Yu; Fu, Ting-Ting; Ding, Li; Han, Ling-Li; Li, Jian-Chao

    2012-03-01

    To understand electromagnetic radiation field strength and its influencing factors of certain 110-kV high-voltage lines in one urban area of Chongqing by measuring 110-kV high-voltage line's electromagnetic radiation level. According to the methodology as determined by the National Hygienic Standards, we selected certain adjacent residential buildings, high-voltage lines along a specific street and selected different distances around its vertical projection point as monitoring points. The levels of electromagnetic radiations were measured respectively. In this investigation within the frequency of 5-1,000 Hz both the electric field strength and magnetic field strength of each monitoring sites were lower than the public exposure standards as determined by the International Commission on Non-Ionizing Radiation Protection. However, the electrical field strength on the roof adjacent to the high-voltage lines was significantly higher than that as measured on the other floors in the same buildings (p electromagnetic radiation measurements of different monitoring points, under the same high-voltage lines, showed the location which is nearer the high-voltage line maintain a consistently higher level of radiation than the more distant locations (p Electromagnetic radiation generated by high-voltage lines decreases proportionally to the distance from the lines. The buildings can to some extent shield (or absorb) the electric fields generated by high-voltage lines nearby. The electromagnetic radiation intensity near high-voltage lines may be mitigated or intensified by the manner in which the high-voltage lines are set up, and it merits attention for the potential impact on human health.

  13. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Kalpataru, E-mail: panda@afm.eei.eng.osaka-u.ac.jp, E-mail: phy.kalpa@gmail.com; Inami, Eiichi; Sugimoto, Yoshiaki [Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan); Sankaran, Kamatchi J.; Tai, Nyan Hwa [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, I-Nan, E-mail: inanlin@mail.tku.edu.tw [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2014-10-20

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  14. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    International Nuclear Information System (INIS)

    Panda, Kalpataru; Inami, Eiichi; Sugimoto, Yoshiaki; Sankaran, Kamatchi J.; Tai, Nyan Hwa; Lin, I-Nan

    2014-01-01

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm 2 at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  15. On the relaxation of magnetospheric convection when Bz turns northward

    Directory of Open Access Journals (Sweden)

    M. C. Kelley

    2012-06-01

    Full Text Available The solar wind inputs considerable energy into the upper atmosphere, particularly when the interplanetary magnetic field (IMF is southward. According to Poynting's theorem (Kelley, 2009, this energy becomes stored as magnetic fields and then is dissipated by Joule heat and by energizing the plasmasheet plasma. If the IMF turns suddenly northward, very little energy is transferred into the system while Joule dissipation continues. In this process, the polar cap potential (PCP decreases. Experimentally, it was shown many years ago that the energy stored in the magnetosphere begins to decay with a time constant of two hours. Here we use Poynting's theorem to calculate this time constant and find a result that is consistent with the data.

  16. Magnetic field effects on electrical parameters of rf excited CO{sub 2} lasers

    Energy Technology Data Exchange (ETDEWEB)

    Tavassoli, S.H. [Laser Research Institute and Physics Department of Shahid Beheshti University, Evin, Tehran (Iran, Islamic Republic of)]. E-mail: h-tavassoli@cc.sbu.ac.ir; Latifi, H. [Laser Research Institute and Physics Department of Shahid Beheshti University, Evin, Tehran (Iran, Islamic Republic of)

    2005-02-14

    In the present Letter a rf excited CO{sub 2} laser embedded in an external, constant, and homogeneous magnetic field is considered. The magnetic field effects on some discharge parameters such as V-I characteristics, impedance of sheaths and positive column of plasma, intensity of visible emission from plasma and thickness of positive column are investigated. There is an increase in thickness of positive column and output power in presence of magnetic field. Magnetic field leads to an increase in the discharge voltage and impedance for lower current densities and a decrease for higher ones. There is a current density in which the magnetic field has no effects on discharge voltage and impedance. There are two peaks on intensity of visible emission from the discharge which at higher magnetic field are pushed out toward the electrodes.

  17. Automatic Voltage Control (AVC) of Danish Transmission System - Concept design

    DEFF Research Database (Denmark)

    Qin, Nan; Abildgaard, Hans; Lund, P.

    2014-01-01

    For more than 20 years it has been a consistent plan by all Danish governments to turn the Danish power production away from fossil fuels towards renewable energy. The result today is that 37% of the total Danish power consumption was covered by mainly wind energy in 2013 aiming at 50% by 2020......, objectives, constraints, algorithms for optimal power flow and some special functions in particular systems, which inspires the concept design of a Danish AVC system to address the future challenges of voltage control. In the concept, the Danish AVC design is based on a centralized control scheme. All...... the substation loses the telecommunications to the control center. RPCs will be integrated to the AVC system as normative regulators in the later stage. Distributed generation units can be organized as virtual power plants and participate in voltage control at transmission level. Energinet.dk as the Danish TSO...

  18. Voltage sags impact on CAR and SOR of HANARO

    International Nuclear Information System (INIS)

    Kim, Hyung Kyoo; Jung, Hoan Sung; Wu, Jong Sup

    2004-01-01

    The combination of the unstable electric power and sensitive equipment may cause the nuisance of reactor trip. The reactor is tripped by the RRS and RPS during the occurrence of the voltage sags or momentary interruptions. We tested the components of RRS and RPS for the immunity from voltage sags and momentary interruptions. The tested components are DC power supply for CAR (control absorbed rod) of RRS and AC coil contactor for SOR (shut off rod) of RPS. We briefly describe the power quality standard for the voltage sags. This paper summarizes the magnitudes and durations of the voltage sags which impact on the CAR and SOR system

  19. A new home energy management algorithm with voltage control in a smart home environment

    International Nuclear Information System (INIS)

    Elma, Onur; Selamogullari, Ugur Savas

    2015-01-01

    Energy management in electrical systems is one of the important issues for energy efficiency and future grid systems. Energy management is defined as a HEM (home energy management) on the residential consumer side. The HEM system plays a key role in residential demand response applications. In this study, a new HEM algorithm is proposed for smart home environments to reduce peak demand and increase the energy efficiency. The proposed algorithm includes VC (voltage control) methodology to reduce the power consumption of residential appliances so that the shifting of appliances is minimized. The results of the survey are used to produce representative load profiles for a weekday and for a weekend. Then, case studies are completed to test the proposed HEM algorithm in reducing the peak demand in the house. The main aim of the proposed HEM algorithm is to minimize the number of turned-off appliances to decrease demand so that the customer comfort is maximized. The smart home laboratory at Yildiz Technical University, Istanbul, Turkey is used in case studies. Experimental results show that the proposed HEM algorithm reduces the peak demand by 17.5% with the voltage control and by 38% with both the voltage control and the appliance shifting. - Highlights: • A new HEM (home energy management) algorithm is proposed. • Voltage control in the HEM is introduced as a solution for peak load reduction. • Customer comfort is maximized by minimizing the number of turned-off appliances. • The proposed HEM algorithm is experimentally validated at a smart home laboratory. • A survey is completed to produce typical load profiles of a Turkish family.

  20. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  1. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  2. Characteristics of turn signal use at intersections in baseline naturalistic driving.

    Science.gov (United States)

    Sullivan, John M; Bao, Shan; Goudy, Roy; Konet, Heather

    2015-01-01

    The purpose of this study was to determine whether a driver's use of turn signals is sufficiently reliable to forecast a vehicle's future path around an intersection, when detailed information about the intersection is unavailable. Naturalistic observations of turn signal use among 108 drivers on surface streets were extracted from the baseline portion of a field operational test of a safety system. Left and right turns that resulted in heading changes of between 70 and 110° and turn radii between 18 and 90 m were selected from the dataset. The odds that a driver would signal a turn were modeled as a function of road type, turn direction, presence of a forward vehicle, whether the vehicle stopped before the turn, and driver age and gender. Overall, 25 percent of left turns and 29 percent of right turns were not signaled. Road type, turn direction, and presence of a forward vehicle were found to influence the odds that a turn is signaled, while gender and age of the driver did not. The results suggest that situational factors like road type and turn direction are more powerful predictors of whether a turn will be signaled than either age or gender. Signaling on major and minor surface roads was about 5 times more likely than on local roads and 1.5 times more likely when a forward vehicle was present, suggesting a possible effect of traffic volume. It was concluded that turn signal activation alone may be insufficiently reliable to forecast a driver's path. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  4. Thyristor current-pulse generator for betatron electromagnet with independent low-voltage supply

    International Nuclear Information System (INIS)

    Baginskii, B.A.; Makarevich, V.N.; Shtein, M.M.

    1989-01-01

    A thyristor generator is described that produces unipolar current pulses in the winding of a betatron electromagnet. The voltage on the electro-magnet is increased and the shape of the current pulses is improved by use of an intermediate inductive storage device. The current pulses have a duration of 11 msec, an amplitude of 190 A, and a repetition frequency of 50 Hz. The maximum magnetic-field energy is 450 J, the voltage on the electromagnet winding is 1.5 kV, and the supply voltage is 27 V

  5. High voltage transmission lines studies with the use of artificial intelligence

    Energy Technology Data Exchange (ETDEWEB)

    Ekonomou, L. [A.S.PE.T.E. - School of Pedagogical and Technological Education, Department of Electrical Engineering Educators, N. Heraklion, 141 21 Athens (Greece)

    2009-12-15

    The paper presents an alternative approach for the studies of high voltage transmission lines based on artificial intelligence and more specifically artificial neural networks (ANNs). In contrast to the existing conventional-analytical techniques and simulations which are using in the calculations empirical and/or approximating equations, this approach is based only on actual field data and actual measurements. The proposed approach is applied on high voltage transmission lines in order to calculate the lightning outages, on grounding systems in order to assess the grounding resistance and on high voltage transmission lines' polluted insulators in order to estimate the critical flashover voltage. The obtained results are very close to the actual ones for all three case studies, something which clearly implies that the ANN approach is well working and has an acceptable accuracy, constituting an additional tool of electric engineers. (author)

  6. Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

    Science.gov (United States)

    Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

    2013-02-01

    For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

  7. Contributions of counter-charge in a potassium channel voltage-sensor domain

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

    2011-01-01

    Voltage-sensor domains couple membrane potential to conformational changes in voltage-gated ion channels and phosphatases. Highly coevolved acidic and aromatic side chains assist the transfer of cationic side chains across the transmembrane electric field during voltage sensing. We investigated...... the functional contribution of negative electrostatic potentials from these residues to channel gating and voltage sensing with unnatural amino acid mutagenesis, electrophysiology, voltage-clamp fluorometry and ab initio calculations. The data show that neutralization of two conserved acidic side chains...

  8. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  9. Measurement of magnetically insulated line voltage using a Thomson Parabola Charged Particle Analyser

    International Nuclear Information System (INIS)

    Stanley, T.D.; Stinnett, R.W.

    1981-01-01

    The absence of direct measurements of magnetically insulated line voltage necessitated reliance on inferred voltages based on theoretical calculation and current measurements. This paper presents some of the first direct measurements of magnetically insulated transmission line peak voltages. These measurements were made on the Sandia National Laboratories HydraMITE facility. The peak voltage is measured by observing the energy of negative ions produced at the line cathode and accelerated through the line voltage. The ion energy and the charge-to-mass ratio are measured using the Thomson Parabola mass spectrometry technique. This technique uses parallel E and B fields to deflect the ions. The deflected ions are detected using a microchannel plate coupled to a phosphor screen and photographic film. The Thomson Parabola results are compared to Faraday Cup measurements and to calculated voltages based on current measurements. In addition, the significance of observed positive ions is discussed

  10. Aligned energy-level design for decreasing operation voltage of tandem white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Chang, Chih-Hao; Wu, Zih-Jyun; Liang, Yi-Hu; Chang, Yu-Shuo; Chiu, Chuan-Hao; Tai, Cheng-Wei; Chang, Hsin-Hua

    2013-01-01

    In general, organic light-emitting devices (OLEDs) need to operate at higher current density levels to ensure an ample light flux. However, stressed operation will result in poor performance and limited device lifetime. Recently, a tandem structure has been proposed as a pivotal technique to meet the stringent lighting requirements for OLED commercialization, with a research focus on decreasing the concomitant higher operation voltage. Driving two connected emission units (EMUs) in a tandem structure often requires more than twice the driving voltage for a single EMU. This study investigates bipolar host materials and their effective employment in fabricating tandem white phosphorescent OLEDs (PhOLEDs). In addition, the design of a mechanism to align the energy level between the hole transport layer/emitting layer is shown to effectively mitigate operational voltages. In sharp contrast to devices using a unipolar host material, we demonstrate that the turn-on voltage of blue PhOLEDs could be decreased from 3.8 V to 2.7 V through utilizing a bipolar host. Furthermore, applying the proposed techniques to tandem white PhOLEDs produces a luminance of 10 3 cd/m 2 by a 10.1 V driving voltage. - Highlights: • The matched energy level between the hole transport/emitting layer lowers voltages. • Multiple conduction dopants were used to investigate charge generation layer. • Two-color emitters were used to quantify the charge generation strength

  11. Effect of anodizing voltage on the sorption of water molecules on porous alumina

    Energy Technology Data Exchange (ETDEWEB)

    Vrublevsky, I., E-mail: vrublevsky@bsuir.edu.by [Belarusian State University of Informatics and Radioelectronics, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus); Chernyakova, K. [Belarusian State University of Informatics and Radioelectronics, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus); Bund, A.; Ispas, A.; Schmidt, U. [Fachgebiet Elektrochemie und Galvanotechnik, Technische Universitaet Ilmenau, 98693 Ilmenau (Germany)

    2012-05-01

    The amount of water adsorbed on different centers on the surface of oxalic acid alumina films is a function of the anodizing voltage. It is decreased with increasing the anodizing voltage from 20 up to 50 V, came up to maximum value at 20-30 V and slightly increased at voltages above 50 V. Water adsorption by oxide films formed at voltages below 50 V can be due to the negative surface charge that is present on the alumina surface. The negative surface charge disappears in the films formed at voltages higher than 50 V, and thus, the water is adsorbed on aluminum ions in a tetrahedral and octahedral environment. The correlation between anodizing conditions of aluminum in oxalic acid and the structure and composition of anodic alumina was established by Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM), thermogravimetric and differential thermal analyses (TG/DTA).

  12. Electron emission of cathode holder of vacuum diode of an intense electron-beam accelerator and its effect on the output voltage

    Directory of Open Access Journals (Sweden)

    Xin-Bing Cheng

    2011-04-01

    Full Text Available The vacuum diode which is used to generate relativistic electron beams is one of the most important parts of a pulsed-power modulator. In this paper, the electron emission of cathode holder of a vacuum diode and its effect on the output voltage is investigated by experiments on an intense electron-beam accelerator with 180 ns full width at half maximum and 200–500 kV output voltage. First, the field emission is analyzed and the electric field of the vacuum chamber is calculated. Then, the flatness of the output voltage is discussed before and after adding an insulation plate when a water load is used. It is found that the electron emission at the edges of the cathode holder is the main reason to cause the change of the flatness. Last, a piece of polyester film is used as a target to further show the electron emission of the cathode holder. This analysis shows that decreasing the electron emission of the cathode holder in such a pulse power modulator could be a good way to improve the quality of the output voltage.

  13. Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

    Science.gov (United States)

    Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

    2018-04-18

    Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

  14. Turning lead into gold

    DEFF Research Database (Denmark)

    Jensen, Steffen Moltrup Ernø

    For years the field of entrepreneurship has been blinded by the alchemical promise of turning lead into gold, of finding the ones most likely to become the next Branson, Zuckerberg or Gates. The promise has been created in the midst of political and scientific agendas where certain individuals...... is not to accumulate state or market wealth, but for entrepreneurial skills to become tools towards the liberation of the individual from oppressive systems of control – essentially to add public value rather than economic value. In this presentation I will sketch an anarchist perspective on entrepreneurship, looking...

  15. Research on uncertainty evaluation measure and method of voltage sag severity

    Science.gov (United States)

    Liu, X. N.; Wei, J.; Ye, S. Y.; Chen, B.; Long, C.

    2018-01-01

    Voltage sag is an inevitable serious problem of power quality in power system. This paper focuses on a general summarization and reviews on the concepts, indices and evaluation methods about voltage sag severity. Considering the complexity and uncertainty of influencing factors, damage degree, the characteristics and requirements of voltage sag severity in the power source-network-load sides, the measure concepts and their existing conditions, evaluation indices and methods of voltage sag severity have been analyzed. Current evaluation techniques, such as stochastic theory, fuzzy logic, as well as their fusion, are reviewed in detail. An index system about voltage sag severity is provided for comprehensive study. The main aim of this paper is to propose thought and method of severity research based on advanced uncertainty theory and uncertainty measure. This study may be considered as a valuable guide for researchers who are interested in the domain of voltage sag severity.

  16. Mammalian cortical astrocytes align themselves in a physiological voltage gradient.

    Science.gov (United States)

    Borgens, R B; Shi, R; Mohr, T J; Jaeger, C B

    1994-07-01

    Astrocytes obtained from primary cultures of newborn rat cerebral cortex show a marked structural rearrangement to weak (50-500 mV/mm) applied voltage gradients. Astrocytes reorient their processes so that the cells are aligned perpendicular to the voltage gradient. At field strengths of 100 mV/mm or greater, this realignment occurs in over 90% of the cell population. Furthermore, these magnitudes of electric fields completely eliminate any parallel alignments originally observed prior to application of the voltage. Realignment usually occurs by a withdrawal, followed by an extension, of cell processes. These responses occur at voltage gradients within the physiological range that naturally exist across the neural tube during early development. We suggest the possibility that architectural arrangements of developing glia and, subsequently, neurons may be regulated by endogenous transepithelial potentials that exist across embryonic neuroepithelium.

  17. An application of eddy current damping effect on single point diamond turning of titanium alloys

    Science.gov (United States)

    Yip, W. S.; To, S.

    2017-11-01

    Titanium alloys Ti6Al4V (TC4) have been popularly applied in many industries. They have superior material properties including an excellent strength-to-weight ratio and corrosion resistance. However, they are regarded as difficult to cut materials; serious tool wear, a high level of cutting vibration and low surface integrity are always involved in machining processes especially in ultra-precision machining (UPM). In this paper, a novel hybrid machining technology using an eddy current damping effect is firstly introduced in UPM to suppress machining vibration and improve the machining performance of titanium alloys. A magnetic field was superimposed on samples during single point diamond turning (SPDT) by exposing the samples in between two permanent magnets. When the titanium alloys were rotated within a magnetic field in the SPDT, an eddy current was generated through a stationary magnetic field inside the titanium alloys. An eddy current generated its own magnetic field with the opposite direction of the external magnetic field leading a repulsive force, compensating for the machining vibration induced by the turning process. The experimental results showed a remarkable improvement in cutting force variation, a significant reduction in adhesive tool wear and an extreme long chip formation in comparison to normal SPDT of titanium alloys, suggesting the enhancement of the machinability of titanium alloys using an eddy current damping effect. An eddy current damping effect was firstly introduced in the area of UPM to deliver the results of outstanding machining performance.

  18. An application of eddy current damping effect on single point diamond turning of titanium alloys

    International Nuclear Information System (INIS)

    Yip, W S; To, S

    2017-01-01

    Titanium alloys Ti6Al4V (TC4) have been popularly applied in many industries. They have superior material properties including an excellent strength-to-weight ratio and corrosion resistance. However, they are regarded as difficult to cut materials; serious tool wear, a high level of cutting vibration and low surface integrity are always involved in machining processes especially in ultra-precision machining (UPM). In this paper, a novel hybrid machining technology using an eddy current damping effect is firstly introduced in UPM to suppress machining vibration and improve the machining performance of titanium alloys. A magnetic field was superimposed on samples during single point diamond turning (SPDT) by exposing the samples in between two permanent magnets. When the titanium alloys were rotated within a magnetic field in the SPDT, an eddy current was generated through a stationary magnetic field inside the titanium alloys. An eddy current generated its own magnetic field with the opposite direction of the external magnetic field leading a repulsive force, compensating for the machining vibration induced by the turning process. The experimental results showed a remarkable improvement in cutting force variation, a significant reduction in adhesive tool wear and an extreme long chip formation in comparison to normal SPDT of titanium alloys, suggesting the enhancement of the machinability of titanium alloys using an eddy current damping effect. An eddy current damping effect was firstly introduced in the area of UPM to deliver the results of outstanding machining performance. (paper)

  19. Detection of Inter-turn Faults in Five-Phase Permanent Magnet Synchronous Motors

    Directory of Open Access Journals (Sweden)

    SAAVEDRA, H.

    2014-11-01

    Full Text Available Five-phase permanent magnet synchronous motors (PMSMs have inherent fault-tolerant capabilities. This paper analyzes the detection of inter-turn short circuit faults in five-phase PMSMs in their early stage, i.e. with only one turn in short circuit by means of the analysis of the stator currents and the zero-sequence voltage component (ZSVC spectra. For this purpose, a parametric model of five-phase PMSMs which accounts for the effects of inter-turn short circuits is developed to determine the most suitable harmonic frequencies to be analyzed to detect such faults. The amplitudes of these fault harmonic are analyzed in detail by means of finite-elements method (FEM simulations, which corroborate the predictions of the parametric model. A low-speed five-phase PMSM for in-wheel applications is studied and modeled. This paper shows that the ZSVC-based method provides better sensitivity to diagnose inter-turn faults in the analyzed low-speed application. Results presented under a wide speed range and different load levels show that it is feasible to diagnose such faults in their early stage, thus allowing applying a post-fault strategy to minimize their effects while ensuring a safe operation.

  20. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  1. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  2. Diffuse mode and diffuse-to-filamentary transition in a high pressure nanosecond scale corona discharge under high voltage

    International Nuclear Information System (INIS)

    Tardiveau, P; Moreau, N; Bentaleb, S; Postel, C; Pasquiers, S

    2009-01-01

    The dynamics of a point-to-plane corona discharge induced in high pressure air under nanosecond scale high overvoltage is investigated. The electrical and optical properties of the discharge can be described in space and time with fast and precise current measurements coupled to gated and intensified imaging. Under atmospheric pressure, the discharge exhibits a diffuse pattern like a multielectron avalanche propagating through a direct field ionization mechanism. The diffuse regime can exist since the voltage rise time is much shorter than the characteristic time of the field screening effects, and as long as the local field is higher than the critical ionization field in air. As one of these conditions is not fulfilled, the discharge turns into a multi-channel regime and the diffuse-to-filamentary transition strongly depends on the overvoltage, the point-to-plane gap length and the pressure. When pressure is increased above atmospheric pressure, the diffuse stage and its transition to streamers seem to satisfy similarity rules as the key parameter is the reduced critical ionization field only. However, above 3 bar, neither diffuse avalanche nor streamer filaments are observed but a kind of streamer-leader regime, due to the fact that mechanisms such as photoionization and heat diffusion are not similar to pressure.

  3. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  4. Dual voltage source inverter topology extending machine operating range

    NARCIS (Netherlands)

    Gerrits, T.; Wijnands, C.G.E.; Paulides, J.J.H.; Duarte, J.L.

    2012-01-01

    Field weakening operation of an electrical machine is a conventional method to extend the angular velocity range of a system above the peak output voltage of the inverter. A downside, however, is that an increased reactive current is required that creates losses but no output torque. A dual voltage

  5. Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

    Science.gov (United States)

    Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

    2012-03-01

    Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

  6. Sensing charges of the Ciona intestinalis voltage-sensing phosphatase.

    Science.gov (United States)

    Villalba-Galea, Carlos A; Frezza, Ludivine; Sandtner, Walter; Bezanilla, Francisco

    2013-11-01

    Voltage control over enzymatic activity in voltage-sensitive phosphatases (VSPs) is conferred by a voltage-sensing domain (VSD) located in the N terminus. These VSDs are constituted by four putative transmembrane segments (S1 to S4) resembling those found in voltage-gated ion channels. The putative fourth segment (S4) of the VSD contains positive residues that likely function as voltage-sensing elements. To study in detail how these residues sense the plasma membrane potential, we have focused on five arginines in the S4 segment of the Ciona intestinalis VSP (Ci-VSP). After implementing a histidine scan, here we show that four arginine-to-histidine mutants, namely R223H to R232H, mediate voltage-dependent proton translocation across the membrane, indicating that these residues transit through the hydrophobic core of Ci-VSP as a function of the membrane potential. These observations indicate that the charges carried by these residues are sensing charges. Furthermore, our results also show that the electrical field in VSPs is focused in a narrow hydrophobic region that separates the extracellular and intracellular space and constitutes the energy barrier for charge crossing.

  7. Calculation of Onset Voltage of Sliding Discharge over a Dielectric Barrier

    Directory of Open Access Journals (Sweden)

    Abdel-Salam Mazen

    2016-01-01

    Full Text Available This paper is aimed at calculating the onset voltage of a sliding discharge established between two electrodes at the upper and bottom surfaces of a dielectric barrier plate; named sliding dielectric barrier discharge (SDBD driven by AC voltage during negative half cycle. The onset voltage is based on the condition of self-sustenance of avalanche growth in the vicinity of the stressed electrode. This calls at first for calculation of the electric field in the vicinity of stressed electrode. The dependency of onset voltage on the thickness and permittivity of the dielectric barrier as well as the thickness of the stressed electrode and the inter-electrode spacing between the stressed and ground electrodes is investigated. The obtained results are discussed in the light of gas discharge physics.

  8. Comparison of experimental and theoretical reaction rail currents, rail voltages, and airgap fields for the linear induction motor research vehicle

    Science.gov (United States)

    Elliott, D. G.

    1977-01-01

    Measurements of reaction rail currents, reaction rail voltages, and airgap magnetic fields in tests of the Linear Induction Motor Research Vehicle (LIMRV) were compared with theoretical calculations from the mesh/matrix theory. It was found that the rail currents and magnetic fields predicted by the theory are within 20 percent of the measured currents and fields at most motor locations in most of the runs, but differ by as much as a factor of two in some cases. The most consistent difference is a higher experimental than theoretical magnetic field near the entrance of the motor and a lower experimental than theoretical magnetic field near the exit. The observed differences between the theoretical and experimental magnetic fields and currents do not account for the differences of as much as 26 percent between the theoretical and experimental thrusts.

  9. Influence of X and gamma radiation and bias conditions on dropout voltage of voltage regulators serial transistors

    International Nuclear Information System (INIS)

    Vukic, V.; Osmokrovic, P.; Stankovic, S.; Kovacevic, M.

    2005-01-01

    Research topic presented in this paper is degradation of characteristics of low-dropout voltage regulator's serial transistor during exposure of device to the ionizing radiation. Voltage regulators were exposed to X and γ radiation in two modes: without bias conditions, and with bias conditions and load. Tested circuits are representatives of the first and the second generation of low-dropout voltage regulators, with lateral and vertical PNP serial transistor: LM2940 and L4940. Experimental results of output voltage and serial dropout voltage change in function of total ionizing dose, during the medium-dose-rate exposure, were presented. (author) [sr

  10. Evaluation of niobium as candidate electrode material for dc high voltage photoelectron guns

    Directory of Open Access Journals (Sweden)

    M. BastaniNejad

    2012-08-01

    Full Text Available The field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirrorlike finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain, and two fine-grain that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and field strength. In all cases, field emission from electrodes (stainless steel and/or niobium could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (<10  pA at 225 kV with 20 mm cathode/anode gap, corresponding to a field strength of 18.7  MV/m.

  11. Low voltage electron beam accelerators

    International Nuclear Information System (INIS)

    Ochi, Masafumi

    2003-01-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  12. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  13. Detailed Analysis of the Transient Voltage in a JT-60SA PF Coil Circuit

    International Nuclear Information System (INIS)

    Yamauchi, K.; Shimada, K.; Terakado, T.; Matsukawa, M.; Coletti, R.; Lampasi, A.; Gaio, E.; Coletti, A.; Novello, L.

    2013-01-01

    A superconducting coil system is actually complicated by the distributed parameters, e.g. the distributed mutual inductance among turns and the distributed capacitance between adjacent conductors. In this paper, such a complicated system was modeled with a reasonably simplified circuit network with lumped parameters. Then, a detailed circuit analysis was conducted to evaluate the possible voltage transient in the coil circuit. As a result, an appropriate (minimum) snubber capacitance for the Switching Network Unit, which is a fast high voltage generation circuit in JT-60SA, was obtained. (fusion engineering)

  14. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    DEFF Research Database (Denmark)

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

  15. Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

    Science.gov (United States)

    Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

    2017-08-01

    This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

  16. Controlled Growth of Carbon Nanotubes on Micropatterned Au/Cr Composite Film and Field Emission from Their Arrays

    Science.gov (United States)

    Kamide, Koichi; Araki, Hisashi; Yoshino, Katsumi

    2003-12-01

    Carbon nanotube (CNT) arrays with a controlled density are prepared on a micropatterned Au/Cr composite film formed on a quartz glass plate by pyrolysis of Ni-phthalocyanine at 800°C. It is clarified from characteristic X-ray analyses for those samples that a catalytic Ni nanoparticle is not contained within the base of the whisker-like CNT in contrast to that of the bamboo-like CNT, suggesting that the growth process of the present novel CNT is incompatible with that of the bamboo-like CNT. In the Au/Cr composite film, both the Cr atomic content of approximately 30% and the presence of the Ni catalyst devoid of a particle-like shape are important factors for the growth of CNTs. Field emission from the novel CNT arrays exhibits a lower turn-on voltage and a higher current density compared with that from the bamboo-like arrays formed on a quartz plate.

  17. A simple model for induction core voltage distributions

    International Nuclear Information System (INIS)

    Briggs, Richard J.; Fawley, William M.

    2004-01-01

    In fall 2003 T. Hughes of MRC used a full EM simulation code (LSP) to show that the electric field stress distribution near the outer radius of the longitudinal gaps between the four Metglas induction cores is very nonuniform in the original design of the DARHT-2 accelerator cells. In this note we derive a simple model of the electric field distribution in the induction core region to provide physical insights into this result. The starting point in formulating our model is to recognize that the electromagnetic fields in the induction core region of the DARHT-2 accelerator cells should be accurately represented within a quasi-static approximation because the timescale for the fields to change is much longer than the EM wave propagation time. The difficulty one faces is the fact that the electric field is a mixture of both a ''quasi-magnetostatic field'' (having a nonzero curl, with Bdot the source) and a ''quasi-electrostatic field'' (the source being electric charges on the various metal surfaces). We first discuss the EM field structure on the ''micro-scale'' of individual tape windings in Section 2. The insights from that discussion are then used to formulate a ''macroscopic'' description of the fields inside an ''equivalent homogeneous tape wound core region'' in Section 3. This formulation explicitly separates the nonlinear core magnetics from the quasi-electrostatic components of the electric field. In Section 4 a physical interpretation of the radial dependence of the electrostatic component of the electric field derived from this model is presented in terms of distributed capacitances, and the voltage distribution from gap to gap is related to various ''equivalent'' lumped capacitances. Analytic solutions of several simple multi-core cases are presented in Sections 5 and 6 to help provide physical insight into the effect of various proposed changes in the geometrical parameters of the DARHT-2 accelerator cell. Our results show that over most of the gap

  18. On-line monitoring of base current and forward emitter current gain of the voltage regulator's serial pnp transistor in a radiation environment

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2012-01-01

    Full Text Available A method of on-line monitoring of the low-dropout voltage regulator's operation in a radiation environment is developed in this paper. The method had to enable detection of the circuit's degradation during exploitation, without terminating its operation in an ionizing radiation field. Moreover, it had to enable automatic measurement and data collection, as well as the detection of any considerable degradation, well before the monitored voltage regulator's malfunction. The principal parameters of the voltage regulator's operation that were monitored were the serial pnp transistor's base current and the forward emitter current gain. These parameters were procured indirectly, from the data on the voltage regulator's load and quiescent currents. Since the internal consumption current in moderately and heavily loaded devices was used, the quiescent current of a negligibly loaded voltage regulator of the same type served as a reference. Results acquired by on-line monitoring demonstrated marked agreement with the results acquired from examinations of the voltage regulator's maximum output current and minimum dropout voltage in a radiation environment. The results were particularly consistent in tests with heavily loaded devices. Results obtained for moderately loaded voltage regulators and the risks accompanying the application of the presented method, were also analyzed.

  19. An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Vijith Vijayakumaran Nair

    2015-06-01

    Full Text Available In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

  20. Adaptive Voltage Stability Protection Based on Load Identification Using Phasor Measurement Units

    DEFF Research Database (Denmark)

    Liu, Leo; Bak, Claus Leth; Chen, Zhe

    2011-01-01

    collapse. In this paper, the online load identification using measurement-based approach based on Phasor Measurement Units (PMU) was proposed to evaluate the proximity to voltage instability in order to prevent voltage collapse. In the scenarios of disturbances, the proximity to voltage collapse...... scheme based on PMUs is promising, as it prevented the voltage collapse and minimized the load shedding area....

  1. Effects of electromagnetic field of 33 and 275 kv influences on ...

    African Journals Online (AJOL)

    user

    2012-08-16

    Aug 16, 2012 ... vacant land beneath high voltage transmission lines to grow leaf ... Studies on suitability of vegetables beneath power lines ... analysis. Electromagnetic field strength measurement. Electric field (kV/m) and magnetic field (mT) reading were taken at ..... faint extra band at Rf 0.09 in lanes 4 (30 m), 5 (40 m), 6.

  2. Voltage-gated proton channel is expressed on phagosomes

    International Nuclear Information System (INIS)

    Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

    2009-01-01

    Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

  3. Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices

    International Nuclear Information System (INIS)

    Auciello, O.; Krauss, A.R.; Gruen, D.M.; Shah, P.; Corrigan, T.; Kordesch, M.E.; Chang, R.P.; Barr, T.L.

    1999-01-01

    Alkali metals have extremely low work functions and are, therefore, expected to result in significant enhancement of the electron emission if they are used as coatings on Mo or Si microtip field-emission arrays (FEAs). However, the alkali metals are physically and chemically unstable in layers exceeding a few Angstrom in thickness. Maximum enhancement of electron emission occurs for alkali - metal layers 0.5 - 1 ML thick, but it is extremely difficult to fabricate and maintain such a thin alkali - metal coating. We present here an alternative means of producing chemically and thermally stable, self-replenishing lithium coatings approximately 1 ML thick, which results in a 13-fold reduction in the threshold voltage for electron emission compared with uncoated Si FEAs. copyright 1999 American Institute of Physics

  4. Enhanced field emission properties of tilted graphene nanoribbons on aggregated TiO{sub 2} nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Shang-Chao, E-mail: schung99@gmail.com [Department of Information Technology & Communication, Shih Chien University Kaohsiung Campus, Neimen, Kaohsiung 845, Taiwan (China); Chen, Yu-Jyun [Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-07-15

    Highlights: • Graphene nanoribbons (GNBs) slanted on aggregate TiO{sub 2} nanotube (A-TNTs) as field-emitters. • Turn-on electric field and field enhancement factor β are dependent on the substrate morphology. • Various quantities of GNRs are deposited on top of A-TNTs (GNRs/A-TNTs) with different morphologies. • With an increase of GNBs compositions, the specimens' turn-on electric field is reduced to 2.8 V/μm. • The field enhancement factor increased rapidly to about 1964 with the addition of GNRs. - Abstract: Graphene nanoribbons (GNRs) slanted on aggregate TiO{sub 2} nanotube arrays (A-TNTs) with various compositions as field-emitters are reported. The morphology, crystalline structure, and composition of the as-obtained specimens were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectrometry. The dependence of the turn-on electric field and the field enhancement factor β on substrate morphology was studied. An increase of GNRs reduces the specimens’ turn-on electric field to 2.8 V/μm and the field enhancement factor increased rapidly to about 1964 with the addition of GNRs. Results show a strong dependence of the field emission on GNR composition aligned with the gradient on the top of the A-TNT substrate. Enhanced FE properties of the modified TNTs can be mainly attributed to their improved electrical properties and rougher surface morphology.

  5. Research on the Error Characteristics of a 110 kV Optical Voltage Transformer under Three Conditions: In the Laboratory, Off-Line in the Field and During On-Line Operation

    Science.gov (United States)

    Xiao, Xia; Hu, Haoliang; Xu, Yan; Lei, Min; Xiong, Qianzhu

    2016-01-01

    Optical voltage transformers (OVTs) have been applied in power systems. When performing accuracy performance tests of OVTs large differences exist between the electromagnetic environment and the temperature variation in the laboratory and on-site. Therefore, OVTs may display different error characteristics under different conditions. In this paper, OVT prototypes with typical structures were selected to be tested for the error characteristics with the same testing equipment and testing method. The basic accuracy, the additional error caused by temperature and the adjacent phase in the laboratory, the accuracy in the field off-line, and the real-time monitoring error during on-line operation were tested. The error characteristics under the three conditions—laboratory, in the field off-line and during on-site operation—were compared and analyzed. The results showed that the effect of the transportation process, electromagnetic environment and the adjacent phase on the accuracy of OVTs could be ignored for level 0.2, but the error characteristics of OVTs are dependent on the environmental temperature and are sensitive to the temperature gradient. The temperature characteristics during on-line operation were significantly superior to those observed in the laboratory. PMID:27537895

  6. Electrowetting on dielectric: experimental and model study of oil conductivity on rupture voltage

    Science.gov (United States)

    Zhao, Qing; Tang, Biao; Dong, Baoqin; Li, Hui; Zhou, Rui; Guo, Yuanyuan; Dou, Yingying; Deng, Yong; Groenewold, Jan; Henzen, Alexander Victor; Zhou, Guofu

    2018-05-01

    Electrowetting on dielectric devices uses a conducting (water) and insulating (oil) liquid phase in conjunction on a dielectric layer. In these devices, the wetting properties of the liquid phases can be manipulated by applying an electric field. The electric field can rupture the initially flat oil film and promotes further dewetting of the oil. Here, we investigate a problem in the operation of electrowetting on dielectric caused by a finite conductivity of the oil. In particular, we find that the voltage at which the oil film ruptures is sensitive to the application of relatively low DC voltages prior to switching. Here, we systematically investigate this dependence using controlled driving schemes. The mechanism behind these history effects point to charge transport processes in the dielectric and the oil, which can be modeled and characterized by a decay time. To quantify the effects the typical response timescales have been measured with a high-speed video camera. The results have been reproduced in simulations. In addition, a simplified yet accurate equivalent circuit model is developed to analyze larger data sets more conveniently. The experimental data support the hypothesis that each pixel can be characterized by a single decay time. We studied an ensemble of pixels and found that they showed a rather broad distribution of decay times with an average value of about 440 ms. This decay time can be interpreted as a discharge timescale of the oil, not to be confused with discharge of the entire system which is generally much faster (<1 ms). Through the equivalent circuit model, we also found that variations in the fluoropolymer (FP) conductivity cannot explain the distribution of decay times, while variations in oil conductivity can.

  7. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  8. Cnidarian Toxins Acting on Voltage-Gated Ion Channels

    Directory of Open Access Journals (Sweden)

    Robert M. Greenberg

    2006-04-01

    Full Text Available Abstract: Voltage-gated ion channels generate electrical activity in excitable cells. As such, they are essential components of neuromuscular and neuronal systems, and are targeted by toxins from a wide variety of phyla, including the cnidarians. Here, we review cnidarian toxins known to target voltage-gated ion channels, the specific channel types targeted, and, where known, the sites of action of cnidarian toxins on different channels.

  9. Independent control strategy of two DC-link voltages for separate MPPTs in transformerless photovoltaic systems using neutral-point-clamped inverters

    DEFF Research Database (Denmark)

    Choi, Uimin; Blaabjerg, Frede; Lee, Kyo-Beum

    2014-01-01

    To improve the efficiency of the photovoltaic (PV) system, the centralized topology using three-level inverters are widely used. In this system, PV modules are separately connected to the split DC-links. This causes a decrease of maximum power point tracking (MPPT) efficiency under the partial...... shading condition. This paper proposes an independent control of two DC-link voltages for separate MPPT of each PV module in three-level inverters. The proposed method is simply implemented by adding or subtracting the time-offset to the three-phase turn-on times and modifying the reference voltages...

  10. Aligned energy-level design for decreasing operation voltage of tandem white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan, ROC (China); Wu, Zih-Jyun; Liang, Yi-Hu; Chang, Yu-Shuo; Chiu, Chuan-Hao; Tai, Cheng-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan, ROC (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li 32061, Taiwan, ROC (China)

    2013-12-02

    In general, organic light-emitting devices (OLEDs) need to operate at higher current density levels to ensure an ample light flux. However, stressed operation will result in poor performance and limited device lifetime. Recently, a tandem structure has been proposed as a pivotal technique to meet the stringent lighting requirements for OLED commercialization, with a research focus on decreasing the concomitant higher operation voltage. Driving two connected emission units (EMUs) in a tandem structure often requires more than twice the driving voltage for a single EMU. This study investigates bipolar host materials and their effective employment in fabricating tandem white phosphorescent OLEDs (PhOLEDs). In addition, the design of a mechanism to align the energy level between the hole transport layer/emitting layer is shown to effectively mitigate operational voltages. In sharp contrast to devices using a unipolar host material, we demonstrate that the turn-on voltage of blue PhOLEDs could be decreased from 3.8 V to 2.7 V through utilizing a bipolar host. Furthermore, applying the proposed techniques to tandem white PhOLEDs produces a luminance of 10{sup 3} cd/m{sup 2} by a 10.1 V driving voltage. - Highlights: • The matched energy level between the hole transport/emitting layer lowers voltages. • Multiple conduction dopants were used to investigate charge generation layer. • Two-color emitters were used to quantify the charge generation strength.

  11. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  12. Bidirectional energy management of loads and decentralized generators in the low voltage grid. Field tests and applications; Bidirektionales Energiemanagement fuer Lasten und dezentrale Erzeuger im Niederspannungsnetz. Feldtest und Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Bendel, C.; Dallinger, D.; Nestle, D.; Ringelstein, J. [ISET e.V., Kassel (Germany)

    2008-07-01

    In the context of growing installation of decentralized and fluctuating generation in the low voltage grid, energy management in this grid level becomes more and more important. In the research project DINAR, an approach therefor was developed and implemented. This approach combines automatic management of loads and decentralized generators by decentral decision, customer information and interaction, meter reading and low voltage grid measurement. This paper covers the developed concept and results from the field test in project DINAR as well as currently ongoing research activity on possible applications. (orig.)

  13. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  14. Absolute Determination of High DC Voltages by Means of Frequency Measurement

    Science.gov (United States)

    Peier, Dirk; Schulz, Bernd

    1983-01-01

    A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

  15. Bottlenecks reduction using superconductors in high voltage transmission lines

    Directory of Open Access Journals (Sweden)

    Daloub Labib

    2016-01-01

    Full Text Available Energy flow bottlenecks in high voltage transmission lines known as congestions are one of the challenges facing power utilities in fast developing countries. Bottlenecks occur in selected power lines when transmission systems are operated at or beyond their transfer limits. In these cases, congestions result in preventing new power supply contracts, infeasibility in existing contracts, price spike and market power abuse. The “Superconductor Technology” in electric power transmission cables has been used as a solution to solve the problem of bottlenecks in energy transmission at high voltage underground cables and overhead lines. The increase in demand on power generation and transmission happening due to fast development and linked to the intensive usage of transmission network in certain points, which in turn, lead to often frequent congestion in getting the required power across to where it is needed. In this paper, a bottleneck in high voltage double overhead transmission line with Aluminum Conductor Steel Reinforced was modeled using conductor parameters and replaced by Gap-Type Superconductor to assess the benefit of upgrading to higher temperature superconductor and obtain higher current carrying capacity. This proved to reduce the high loading of traditional aluminum conductors and allow more power transfer over the line using superconductor within the same existing right-of-way, steel towers, insulators and fittings, thus reducing the upgrade cost of building new lines.

  16. Spatial turn and animation practices inspired by cultural anthropology

    Directory of Open Access Journals (Sweden)

    Agnieszka Wieszaczewska

    2016-09-01

    Full Text Available Spatial turn is one of the cultural turns, which have recently occurred in the humanities. It stresses the importance of issues such as space and place and can be successfully used as a theoretical perspective gaining use in thought over issues such as globalisation, transnationality, mapping but also education. In the discourses of pedagogical science space and place are considered through their multidimensional impact on education and learning. As significant concepts rooting pedagogy or pedagogy of borderland. The pedagogical reflection on space could be also used in the field of animation practices, especially in activities, which are related to place somehow colonised.

  17. Voltage stability in low voltage microgrids in aspects of active and reactive power demand

    Directory of Open Access Journals (Sweden)

    Parol Mirosław

    2016-03-01

    Full Text Available Low voltage microgrids are autonomous subsystems, in which generation, storage and power and electrical energy consumption appear. In the paper the main attention has been paid to the voltage stability issue in low voltage microgrid for different variants of its operation. In the introduction a notion of microgrid has been presented, and also the issue of influence of active and reactive power balance on node voltage level has been described. Then description of voltage stability issue has been presented. The conditions of voltage stability and indicators used to determine voltage stability margin in the microgrid have been described. Description of the low voltage test microgrid, as well as research methodology along with definition of considered variants of its operation have been presented further. The results of exemplary calculations carried out for the daily changes in node load of the active and reactive power, i.e. the voltage and the voltage stability margin indexes in nodes have been presented. Furthermore, the changes of voltage stability margin indexes depending on the variant of the microgrid operation have been presented. Summary and formulation of conclusions related to the issue of voltage stability in microgrids have been included at the end of the paper.

  18. Medium dependent dual turn on/turn off fluorescence sensing for Cu2 + ions using AMI/SDS assemblies

    Science.gov (United States)

    Gujar, Varsha B.; Ottoor, Divya

    2017-02-01

    Behavior of Amiloride (AMI) as a metal ion sensor in anionic surfactant assemblies of varying concentrations at different pH is depicted in this work. From a non-sensor fluorophore, AMI has been transformed in to a tunable fluorosensor for Cu2 + ions in various SDS concentrations. At premicellar concentration of SDS, ion-pair complex is expected to be formed between AMI and SDS due to electrostatic interactions between them. However at CMC concentrations of SDS, fluorescence intensity of AMI is greatly enhanced with red shift in emission, due to the incorporation of AMI molecule in the hydrophobic micellar interface. The behavior of metal sensing by AMI-SDS assemblies gives rise to several interesting observations. Micellation of SDS has been greatly enhanced by increasing copper ion concentrations, as these counter ions screens the charge on monomers of SDS which lead to the aggregation at premicellar concentrations only. Concentrations and pH dependent discrete trends of interactions between SDS-AMI and SDS-Cu2 + ions, have given tunable fluorescence responses (fluorescence turn on/turn off) of AMI for added Cu2 + ions. The electrostatic interaction between the metal cations and the anionic surfactants is the driving force for bringing the metal ions near to the vicinity of micelle where AMI resides. Thus, a comprehensive understanding of the mechanism related to the 'turn on-turn off' fluorescence response of AMI with respect to pH and SDS concentration for effective Cu2 + ion sensing is illustrated in this work.

  19. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  20. The impact of the biasing radial electric field on the SOL in a divertor tokamak

    International Nuclear Information System (INIS)

    Rozhansky, V.; Tendler, M.

    1993-01-01

    Strong radial electric field can be induced within the SOL in a divertor tokamak by applying a voltage to divertor plates with respect to the first wall. This biasing scheme results in the strong radial electric field which is much larger than the natural electric field, usually of the order T e /e. Experiments employing this biasing scheme were carried out on the tokamak TdeV. Many interesting effects such as - modifications of the density profile and radial transport of impurities as a function of the polarity and the magnitude of the biasing voltage, the generation of the flux surface average toroidal rotation proportional to the applied voltage, redistribution of the plasma outflow onto divertor plates and so on - were demonstrated to result from the biasing. Furthermore, in contrast to studies carried out employing a different biasing scheme which primarily results in a poloidal electric field, the strong radial electric field impacts more significantly within SOL than the poloidal electric field. Here, we aim to show that the main effects observed experimentally follow from the analysis, provided continuity and momentum balances are employed invoking anomalous viscosity and inertia. (author) 4 refs

  1. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  2. On-chip high-voltage generator design design methodology for charge pumps

    CERN Document Server

    Tanzawa, Toru

    2016-01-01

    This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

  3. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  4. Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

    International Nuclear Information System (INIS)

    Altinkok, A.; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M.

    2008-01-01

    The time effects in Ag-doped YBa 2 Cu 3 O 7-x sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning

  5. DC Motor control using motor-generator set with controlled generator field

    Science.gov (United States)

    Belsterling, Charles A.; Stone, John

    1982-01-01

    A d.c. generator is connected in series opposed to the polarity of a d.c. power source supplying a d.c. drive motor. The generator is part of a motor-generator set, the motor of which is supplied from the power source connected to the motor. A generator field control means varies the field produced by at least one of the generator windings in order to change the effective voltage output. When the generator voltage is exactly equal to the d.c. voltage supply, no voltage is applied across the drive motor. As the field of the generator is reduced, the drive motor is supplied greater voltage until the full voltage of the d.c. power source is supplied when the generator has zero field applied. Additional voltage may be applied across the drive motor by reversing and increasing the reversed field on the generator. The drive motor may be reversed in direction from standstill by increasing the generator field so that a reverse voltage is applied across the d.c. motor.

  6. Mechanism of electromechanical coupling in voltage-gated potassium channels

    Directory of Open Access Journals (Sweden)

    Rikard eBlunck

    2012-09-01

    Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

  7. Lattice modeling and calibration with turn-by-turn orbit data

    Directory of Open Access Journals (Sweden)

    Xiaobiao Huang

    2010-11-01

    Full Text Available A new method that explores turn-by-turn beam position monitor (BPM data to calibrate lattice models of accelerators is proposed. The turn-by-turn phase space coordinates at one location of the ring are first established using data from two BPMs separated by a simple section with a known transfer matrix, such as a drift space. The phase space coordinates are then tracked with the model to predict positions at other BPMs, which can be compared to measurements. The model is adjusted to minimize the difference between the measured and predicted orbit data. BPM gains and rolls are included as fitting variables. This technique can be applied to either the entire or a section of the ring. We have tested the method experimentally on a part of the SPEAR3 ring.

  8. Lattice modeling and calibration with turn-by-turn orbit data

    Science.gov (United States)

    Huang, Xiaobiao; Sebek, Jim; Martin, Don

    2010-11-01

    A new method that explores turn-by-turn beam position monitor (BPM) data to calibrate lattice models of accelerators is proposed. The turn-by-turn phase space coordinates at one location of the ring are first established using data from two BPMs separated by a simple section with a known transfer matrix, such as a drift space. The phase space coordinates are then tracked with the model to predict positions at other BPMs, which can be compared to measurements. The model is adjusted to minimize the difference between the measured and predicted orbit data. BPM gains and rolls are included as fitting variables. This technique can be applied to either the entire or a section of the ring. We have tested the method experimentally on a part of the SPEAR3 ring.

  9. Electron–Cyclotron Laser Using Free-Electron Two-Quantum Stark Radiation in a Strong Uniform Axial Magnetic Field and an Alternating Axial Electric Field in a Voltage-Supplied Pill-Box Cavity

    International Nuclear Information System (INIS)

    Kim, S. H.

    2016-01-01

    We consider the radiation from the beam electrons traveling in a strong uniform axial magnetic field and an axial alternating electric field of wavelength λ_w generated by a voltage-supplied pill-box cavity. The beam electrons emit genuine laser radiation that propagates only in the axial direction through free-electron two-quantum Stark radiation. We find that laser radiation takes place only at the expense of the axial kinetic energy when λ_w ≪ c/(ω_c/γ), where ω_c/γ is the relativistic electron–cyclotron frequency. We formulate the laser power based on quantum-wiggler electrodynamics, and envision a laser of length 10 m with estimated power 0.1 GW/(kA) in the 10"−"4 cm wavelength range. (paper)

  10. On the ionospheric coupling of auroral electric fields

    Directory of Open Access Journals (Sweden)

    G. T. Marklund

    2009-04-01

    Full Text Available The quasi-static coupling of high-altitude potential structures and electric fields to the ionosphere is discussed with particular focus on the downward field-aligned current (FAC region. Results are presented from a preliminary analysis of a selection of electric field events observed by Cluster above the acceleration region. The degree of coupling is here estimated as the ratio between the magnetic field-aligned potential drop, ΔΦII, as inferred from the characteristic energy of upward ion (electron beams for the upward (downward current region and the high-altitude perpendicular (to B potential, ΔΦbot, as calculated by integrating the perpendicular electric field across the structure. For upward currents, the coupling can be expressed analytically, using the linear current-voltage relation, as outlined by Weimer et al. (1985. This gives a scale size dependent coupling where structures are coupled (decoupled above (below a critical scale size. For downward currents, the current-voltage relation is highly non-linear which complicates the understanding of how the coupling works. Results from this experimental study indicate that small-scale structures are decoupled, similar to small-scale structures in the upward current region. There are, however, exceptions to this rule as illustrated by Cluster results of small-scale intense electric fields, correlated with downward currents, indicating a perfect coupling between the ionosphere and Cluster altitude.

  11. Low Emittance Gun Project based on Field Emission

    CERN Document Server

    Ganter, Romain; Dehler, M; Gobrecht, Jens; Gough, Chris; Ingold, Gerhard; Leemann, Simon C; Shing-Bruce-Li, Kevin; Paraliev, Martin; Pedrozzi, Marco; Raguin, Jean Yves; Rivkin, Leonid; Schlott, Volker; Sehr, Harald; Streun, Andreas; Wrulich, Albin F; Zelenika, Sasa

    2004-01-01

    The design of an electron gun capable of producing beam emittance one order of magnitude lower than current technology would reduce considerably the cost and size of a free electron laser emitting at 0.1nm. Field emitter arrays (FEAs) including a gate and a focusing layer are an attractive technology for such high brightness sources. Electrons are extracted from micrometric tips thanks to voltage pulses between gate and tips. The focusing layer should then reduce the initial divergence of each emitted beamlets. This FEA will be inserted in a high gradient diode configuration coupled with a radiofrequency structure. In the diode part very high electric field pulses (several hundreds of MV/m) will limit the degradation of emittance due to space charge effect. This first acceleration will be obtained with high voltage pulses (typically a megavolt in a few hundred of nanoseconds) synchronized with the low voltage pulses applied to the FEA (typically one hundred of volts in one nanosecond at frequency below kilohe...

  12. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  13. Single-phased Fault Location on Transmission Lines Using Unsynchronized Voltages

    Directory of Open Access Journals (Sweden)

    ISTRATE, M.

    2009-10-01

    Full Text Available The increased accuracy into the fault's detection and location makes it easier for maintenance, this being the reason to develop new possibilities for a precise estimation of the fault location. In the field literature, many methods for fault location using voltages and currents measurements at one or both terminals of power grids' lines are presented. The double-end synchronized data algorithms are very precise, but the current transformers can limit the accuracy of these estimations. The paper presents an algorithm to estimate the location of the single-phased faults which uses only voltage measurements at both terminals of the transmission lines by eliminating the error due to current transformers and without introducing the restriction of perfect data synchronization. In such conditions, the algorithm can be used with the actual equipment of the most power grids, the installation of phasor measurement units with GPS system synchronized timer not being compulsory. Only the positive sequence of line parameters and sources are used, thus, eliminating the incertitude in zero sequence parameter estimation. The algorithm is tested using the results of EMTP-ATP simulations, after the validation of the ATP models on the basis of registered results in a real power grid.

  14. Impact of scaling voltage and size on the performance of Side-contacted Field Effect Diode

    Science.gov (United States)

    Touchaei, Behnam Jafari; Manavizadeh, Negin

    2018-05-01

    Side-contacted Fild Effect Diode (S-FED), with low leakage current and high Ion/Ioff ratio, has been recently introduced to suppress short channel effects in nanoscale regime. The voltage and size scalability of S-FEDs and effects on the power consumption, propagation delay time, and power delay product have been studied in this article. The most attractive properties are related to channel length to channel thickness ratio in the S-FED which reduces in comparison with MOSFET significantly, while gates control over the channel improve and the off-state current reduces dramatically. This promising advantage is not only capable to improve important S-FED's characteristics such as subthreshold slope but also eliminate Latch-up and floating body effect.

  15. The state of the art of the development of SMES for bridging instantaneous voltage dips in Japan

    Science.gov (United States)

    Nagaya, Shigeo; Hirano, Naoki; Katagiri, Toshio; Tamada, Tsutomu; Shikimachi, Koji; Iwatani, Yu; Saito, Fusao; Ishii, Yusuke

    2012-12-01

    Development of apparatuses for protecting industrial facilities such as semiconductor plants or information industries from instantaneous voltage dips, which requires very large output power, has been expected. A Superconducting magnetic energy storage system (SMES), one of such apparatus, consists of superconducting magnets that must withstand high voltage during operation and require high reliability. We have already development of SMES using conventional superconducting coils and done the field test of the SMES for bridging instantaneous voltage dips. After field test, the commercial SMES for instantaneous voltage dips is working there. Since field test has started, we have confirmed nearly 40 operations, and all have succeeded. In 2011, three commercial SMES units for bridging instantaneous voltage dips are operating in Japan.

  16. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  17. Beyond 100 Tesla: Scientific experiments using single-turn coils

    Science.gov (United States)

    Portugall, Oliver; Solane, Pierre Yves; Plochocka, Paulina; Maude, Duncan K.; Nicholas, Robin J.

    2013-01-01

    Current opportunities and recent examples for research in magnetic fields well above 100 T using single-turn coils are discussed. After a general introduction into basic principles and technical constraints associated with the generation of Megagauss fields we discuss data obtained at the LNCMI Toulouse, where such fields are routinely used for scientific applications.

  18. Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yingxia Yu

    2013-09-01

    Full Text Available Using the Quasi-Two-Dimensional (quasi-2D model, the current-voltage (I-V characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs with different gate length were simulated based on the measured capacitance-voltage (C-V characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher.

  19. Field emission and high voltage cleaning of particulate contaminants on extended metallic surfaces

    International Nuclear Information System (INIS)

    Tan, J.; Bonin, B.; Safa, H.

    1996-01-01

    The vacuum insulation properties of extended metallic surfaces depends strongly on their cleanliness. The usual technique to reduce electronic field emission from such surfaces consists in exposing them to very high electric fields during limited periods of time. This kind of processing also reduces the occurrence of vacuum breakdown. The processing of the surface is generally believed to be due to a thermomechanical destruction of the emitting sites, initiated by the emission itself. Comparison of the electric forces vs adherence forces which act on dust particles lying on the surface shows that the processing could also be due simply to the mechanical removal of the dust particles, with a subsequent reduction of field emission from the contaminated surface. (author)

  20. The influence of preparation methodology on high voltage behaviour of alumina insulators in vacuum

    CERN Document Server

    Goddard, B; Tan, J

    1998-01-01

    The flashover characteristics of an insulator bridged high voltage vacuum gap can play an important role in the overall performance of a high voltage device, for example in the extreme environments of high energy particle accelerators. The detailed preparation of the insulators is, at present, governed by the commercial production methods and by standard bulk cleaning processes, which for a particular application may be far from optimum. The influence of particular cleaning technique have been investigated for commercially available alumina samples, with measurement of surface characteristics by scanning electron microscopy and laser diffraction and fields up to 200 kV/cm. The results of the different measurements are discussed in the overall context of the problems encountered in the full sized high voltage devices, and suggestions are made as to how the performance of alumina insulators could be improved by modification of the production and preparation specification.

  1. Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

    International Nuclear Information System (INIS)

    Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

    2008-01-01

    Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

  2. Control and Testing of a Dynamic Voltage Restorer (DVR) at Medium Voltage Level

    DEFF Research Database (Denmark)

    Nielsen, John Godsk; Newman, Michael; Nielsen, Hans Ove

    2004-01-01

    power sensitive loads from voltage sags. This paper reports practical test results obtained on a medium voltage (10 kV) level using a DVR at a Distribution test facility in Kyndby, Denmark. The DVR was designed to protect a 400-kVA load from a 0.5-p.u. maximum voltage sag. The reported DVR verifies......The dynamic voltage restorer (DVR) has become popular as a cost effective solution for the protection of sensitive loads from voltage sags. Implementations of the DVR have been proposed at both a low voltage (LV) level, as well as a medium voltage (MV) level; and give an opportunity to protect high...... the use of a feed-forward and feed-back technique of the controller and it obtains both good transient and steady state responses. The effect of the DVR on the system is experimentally investigated under both faulted and non-faulted system states, for a variety of linear and non-linear loads. Variable...

  3. Mechanism of voltage-gated channel formation in lipid membranes.

    Science.gov (United States)

    Guidelli, Rolando; Becucci, Lucia

    2016-04-01

    Although several molecular models for voltage-gated ion channels in lipid membranes have been proposed, a detailed mechanism accounting for the salient features of experimental data is lacking. A general treatment accounting for peptide dipole orientation in the electric field and their nucleation and growth kinetics with ion channel formation is provided. This is the first treatment that explains all the main features of the experimental current-voltage curves of peptides forming voltage-gated channels available in the literature. It predicts a regime of weakly voltage-dependent conductance, followed by one of strong voltage-dependent conductance at higher voltages. It also predicts values of the parameters expressing the exponential dependence of conductance upon voltage and peptide bulk concentration for both regimes, in good agreement with those reported in the literature. Most importantly, the only two adjustable parameters involved in the kinetics of nucleation and growth of ion channels can be varied over broad ranges without affecting the above predictions to a significant extent. Thus, the fitting of experimental current-voltage curves stems naturally from the treatment and depends only slightly upon the choice of the kinetic parameters. Copyright © 2015 Elsevier B.V. All rights reserved.

  4. Electrocardiogram voltage discordance: Interpretation of low QRS voltage only in the precordial leads.

    Science.gov (United States)

    Kim, Diana H; Verdino, Ralph J

    To define clinical correlates of low voltage isolated to precordial leads on the surface electrocardiogram (ECG). Low voltage (V) on the ECG is defined as QRS Vvoltage isolated to the precordial leads with normal limb lead voltages is unclear. Twelve-lead ECGs with QRS V>5mm in one or more limb leads and voltage was found in 256 of 150,000 ECGs (~0.2%). 50.4% of patients had discordant ECGs that correlated with classic etiologies, with a higher incidence of LV dilation in those with classic etiologies than those without. Low precordial voltage is associated with classic etiologies and LV dilation. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    Science.gov (United States)

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  6. Real time determination of the laser ablated mass by means of electric field-perturbation measurement

    Science.gov (United States)

    Pacheco, P.; Álvarez, J.; Sarmiento, R.; Bredice, F.; Sánchez-Aké, C.; Villagrán-Muniz, M.; Palleschi, V.

    2018-04-01

    A Nd:YAG ns-pulsed laser was used to ablate Al, Cd and Zn targets, which were placed between the plates of a planar charged capacitor. The plasma generates a transient redistribution of the electrical charges on the plates that can be measured as a voltage drop across a resistor connected to the ground plate. This signal is proportional to the capacitor applied voltage, the distance between the plates and the total number of ions produced in the ablation process which in turn is related to the laser energy and the ablated mass. After a series of pulses, the targets were weighed on a thermogravimetric balance to measure the ablated mass. Our results show that the electrical signal measured on the resistor is univocally related to the ablated mass from the target. Therefore, after a proper calibration depending on the material and the experimental geometry, the electrical signal can be used for real time quantitative measurement of the ablated mass in pulsed laser generated plasma experiments. The experiments were repeated on an aluminum target, with and without the presence of the external electric field in order to determine the possible influence of the applied electric field on the ablated mass.

  7. Effects of turning and through lane sharing on traffic performance at intersections

    Science.gov (United States)

    Li, Xiang; Sun, Jian-Qiao

    2016-02-01

    Turning vehicles strongly influence traffic flows at intersections. Effective regulation of turning vehicles is important to achieve better traffic performance. This paper studies the impact of lane sharing and turning signals on traffic performance at intersections by using cellular automata. Both right-turn and left-turn lane sharing are studied. Interactions between vehicles and pedestrians are considered. The transportation efficiency, road safety and energy economy are the traffic performance metrics. Extensive simulations are carried out to study the traffic performance indices. It is observed that shared turning lanes and permissive left-turn signal improve the transportation efficiency and reduce the fuel consumption in most cases, but the safety is usually sacrificed. It is not always beneficial for the through vehicles when they are allowed to be in the turning lanes.

  8. The Study of Residual Voltage of Induction Motor and the Influence of Various Parameters on the Residual Voltage

    Science.gov (United States)

    Zhang, Shuping; Zhao, Chen; Tan, Weipu

    2017-05-01

    The majority important load of industrial area is mainly composed of induction motor, it is more common that induction motor becomes sluggishness and even tripping due to the lose of power supply or other malfunction in the practical work. In this paper, space vector method is used to establish a reduced order model of induction motor, and then study the changes of motor electromagnetic after losing electricity. Based on motion equations of the rotor and magnetic flux conservation principle, it uses mathematical methods to deduce the expression of rotor current, rotor flux, the stator flux and the residual voltage of stator side. In addition, relying on thermal power plants, it uses the actual data of power plants, takes DIgsilent software to simulate the residual voltage of motor after losing electricity. analyses the influence on the residual voltage with the changes of the moment of inertia, load ratio, initial size of slip and the load characteristic of induction motor. By analysis of these, it has a more detailed understanding about the changes of residual voltage in practical application, in additional, it is more beneficial to put into standby power supply safely and effectively, moreover, reduce the influence of the input process to the whole system.

  9. Voltage-dependent gating in a "voltage sensor-less" ion channel.

    Directory of Open Access Journals (Sweden)

    Harley T Kurata

    2010-02-01

    Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

  10. Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

    Science.gov (United States)

    Hao, Zhibin; Wang, Guozhu; Li, Wenbin; Zhang, Junguo; Kan, Jiangming

    2015-01-01

    The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

  11. Effect of Electric Field in the Stabilized Premixed Flame on Combustion Process Emissions

    Science.gov (United States)

    Otto, Krickis

    2017-10-01

    The effect of the AC and DC electrical field on combustion processes has been investigated by various researchers. The results of these experiments do not always correlate, due to different experiment conditions and experiment equipment variations. The observed effects of the electrical field impact on the combustion process depends on the applied voltage polarity, flame speed and combustion physics. During the experiment was defined that starting from 1000 V the ionic wind takes the effect on emissions in flue gases, flame shape and combustion instabilities. Simulation combustion process in hermetically sealed chamber with excess oxygen amount 3 % in flue gases showed that the positive effect of electrical field on emissions lies in region from 30 to 400 V. In aforementioned voltage range carbon monoxide emissions were reduced by 6 % and at the same time the nitrogen oxide emissions were increased by 3.5 %.

  12. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  13. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  14. Geomagnetically induced pipe-to-soil voltages in the Czech oil pipelines during October-November 2003

    Directory of Open Access Journals (Sweden)

    P. Hejda

    2005-11-01

    Full Text Available Whereas geomagnetically induced currents are a source of problems for technological systems mainly at high geomagnetic latitudes, strong geomagnetic disturbances can have quite strong effects even at mid-latitudes. This paper deals with the analysis of the pipe-to-soil (P/S voltage measured in oil pipelines in the Czech Republic during the Halloween magnetic storms in 2003. It is shown that the simplest - plane wave and uniform Earth-model of the electric field corresponds well to the measured P/S voltage. Although the largest amplitudes of the geomagnetic field were reached on the onset of the geomagnetic storm, large voltages were also induced in the main and recovery phases due to Pc5 oscillations.

  15. Soft-Switched Dual-Input DC-DC Converter Combining a Boost-Half-Bridge Cell and a Voltage-Fed Full-Bridge Cell

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    This paper presents a new zero-voltage-switching (ZVS) isolated dc-dc converter which combines a boost halfbridge (BHB) cell and a full-bridge (FB) cell, so that two different type of power sources, i.e. both current-fed and voltage-fed, can be coupled effectively by the proposed converter...... for various applications, such as fuel cell and super-capacitor hybrid energy system. By fully using two high frequency transformers and a shared leg of switches, number of the power devices and associated gate driver circuits can be reduced. With phase-shift control, the converter can achieve ZVS turn......-on of active switches and zero-current switching (ZCS) turn-off of diodes. In this paper, derivation, analysis and design of the proposed converter are presented. Finally, a 25~50 V input, 300~400 V output prototype with a 600 W nominal power rating is built up and tested to demonstrate the effectiveness...

  16. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  17. Effects of Exponential Nonlinear Electrodynamics and External Magnetic Field on Holographic Superconductors

    Science.gov (United States)

    Sheykhi, A.; Abdollahzadeh, Z.

    2018-03-01

    We investigate the effects of an external magnetic field as well as exponential nonlinear electrodynamics on the properties of s-wave holographic superconductors. Our strategy for this study is the matching method, which is based on the match of the solutions near the horizon and on the boundary at some intermediate point. When the magnetic field is turned off, we obtain the critical temperature as well as the condensation operator and show that the critical exponent is still 1/2, which is the universal value in the mean field theory. Then, we turn on the magnetic field and obtain the critical magnetic field, B c , in order to study its behavior in terms of the temperature. Interestingly enough, we find that in the presence of exponential nonlinear electrodynamics, the critical temperature decreases, while the critical magnetic field increases compared to the Maxwell case. We also observe that the critical magnetic field increases with increasing the nonlinear parameter b.

  18. Effects of dual task on turning ability in stroke survivors and older adults.

    Science.gov (United States)

    Hollands, K L; Agnihotri, D; Tyson, S F

    2014-09-01

    Turning is an integral component of independent mobility in which stroke survivors frequently fall. This study sought to measure the effects of competing cognitive demands on the stepping patterns of stroke survivors, compared to healthy age-match adults, during turning as a putative mechanism for falls. Walking and turning (90°) was assessed under single (walking and turning alone) and dual task (subtracting serial 3s while walking and turning) conditions using an electronic, pressure-sensitive walkway. Dependent measures were time to turn, variability in time to turn, step length, step width and single support time during three steps of the turn. Turning ability in single and dual task conditions was compared between stroke survivors (n=17, mean ± SD: 59 ± 113 months post-stroke, 64 ± 10 years of age) and age-matched healthy counterparts (n=15). Both groups took longer, were more variable, tended to widen the second step and, crucially, increased single support time on the inside leg of the turn while turning and distracted. Increased single support time during turning may represent biomechanical mechanism, within stepping patterns of turning under distraction, for increased risk of falls for both stroke survivors and older adults. Crown Copyright © 2014. Published by Elsevier B.V. All rights reserved.

  19. High voltage electric field effects on structure and biological characteristics of barley seeds

    Energy Technology Data Exchange (ETDEWEB)

    Khazaei, J. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Agrotechnology, Univ. College of Abouraihan; Aliabadi, E. [Tehran Univ., Tehran (Iran, Islamic Republic of). Dept. of Crop Production Horticulture, Univ. College of Aburaihan; Shayegani, A.A. [Tehran Univ., Tehran (Iran, Islamic Republic of). Univ. College of Engineering

    2010-07-01

    Electric biostimulation of seeds is a pre-sowing treatment in which an electric field is applied to seeds to increase germination of non standard seeds. This paper reported on a study that examined the effects of AC electric field and exposure time on the structure and biological characteristics of barley seeds. The objective was to determine the potential to accelerate seed germination, plant growth and root development by the electric field strength and exposure time. Makooei cultivar barley seeds were used in this study. The effect of electric field strength (at 2, 4, 9, and 14 kV/m) and exposure time (at 15, 45, 80, and 150 min) on seed germination was studied along with height of seedling, length or root, height of stem, length of leaves, earliness, dry weight and wet weight of seedling. The treated seeds were stored for a month in a refrigerator at 5 degrees C prior to the germination experiments. The initial germination percent of the seed was 81 per cent. The treatment of barley seeds in an AC electric field had a positive effect on all investigated parameters. The germination percent of the treated seed increased to 94.5 per cent . The seeds exposed for long periods of time (45 to 150 min) showed better germination than the seeds exposed to lower exposure times. Dry and wet weights of seedling increased 143.4 per cent and 45.7 per cent, respectively.

  20. Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

    Directory of Open Access Journals (Sweden)

    Stanković Koviljka

    2009-01-01

    Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.