WorldWideScience

Sample records for tunnels electronic resource

  1. Electron tunnel sensor technology

    Science.gov (United States)

    Waltman, S. B.; Kaiser, W. J.

    1989-01-01

    The recent development of Scanning Tunneling Microscopy technology allows the application of electron tunneling to position detectors for the first time. The vacuum tunnel junction is one of the most sensitive position detection mechanisms available. It is also compact, simple, and requires little power. A prototype accelerometer based on electron tunneling, and other sensor applications of this promising new technology are described.

  2. Chemically driven electron tunnelling pumps

    CERN Document Server

    Goychuk, I

    2006-01-01

    The simplest mechanism for molecular electron pumps is discussed which is based on nonadiabatic electron tunnelling and nonequilibrium conformational fluctuations. Such fluctuations can be induced, e.g. by random binding of negatively charged ATP molecules to the electron-transferring molecular complex, their subsequent hydrolysis and the products dissociation. The pumping rate can be controlled by the ATP concentration in solution. Depending on the model parameters there may exist a critical ATP concentration for the pump to function. Alternatively, nonequilibrium fluctuations can be induced by externally applied stochastic electric fields. For realistically chosen parameters, the mechanism is shown to be robust and highly efficient.

  3. Electronic tunneling currents at optical frequencies

    Science.gov (United States)

    Faris, S. M.; Fan, B.; Gustafson, T. K.

    1975-01-01

    Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.

  4. Ac electronic tunneling at optical frequencies

    Science.gov (United States)

    Faris, S. M.; Fan, B.; Gustafson, T. K.

    1974-01-01

    Rectification characteristics of non-superconducting metal-barrier-metal junctions deduced from electronic tunneling have been observed experimentally for optical frequency irradiation of the junction. The results provide verification of optical frequency Fermi level modulation and electronic tunneling current modulation.

  5. Many-electron tunneling in atoms

    CERN Document Server

    Zon, B A

    1999-01-01

    A theoretical derivation is given for the formula describing N-electron ionization of atom by a dc field and laser radiation in tunneling regime. Numerical examples are presented for noble gases atoms.

  6. Numerical studies of electron tunnelling in liquids

    International Nuclear Information System (INIS)

    The diffusion equation, derived from Fick's second law, with an added exponential sink term to simulate electron tunnelling, is integrated numerically to determine the rate of electron decay at times greater than 1 ps. The effect of a Coulomb interaction with a charged scavenger is examined and the steady-state rate constant shown to approximate closely to that obtained by combining the separate effects of tunnelling and charge-affected diffusion, which can be expressed analytically. Diffusion in the presence of a charge-induced dipole interaction is investigated for the case of scavenging of localised electrons in alkanes. The rate constant is shown to be dominated by random diffusion and tunnelling and the bias induced by the interaction is of little consequence. The sensitivity of the rate constant to changes in the pre-exponential factor in the sink term is shown to be most favourable at short times. (author)

  7. Electron accelerator for tunneling through hard rock

    International Nuclear Information System (INIS)

    Earlier work demonstrated that intense sub-microsecond bursts of energetic electrons cause significant pulverization and spalling of a variety of rock types. The spall debris generally consists of sand, dust, and small flakes. If carried out at rapid repetition rate, this can lead to a promising technique for increasing the speed and reducing the cost of underground excavation of tunnels, mines, and storage spaces. The conceptual design features of a Pulsed Electron Tunnel Excavator capable of tunneling approximately ten times faster than conventional drill/blast methods are presented with primary emphasis on the electron accelerator and only a brief description of the tunneling aspects. Of several candidate types of accelerators, a linear induction accelerator producing electron pulses (5 MV, 5 kA, 1.0 μs = 25 kJ) at a 360 Hz rate was selected for the conceptual example. This provides the required average electron beam power output of 9 MW. The feasibility of such an accelerator is discussed

  8. Single electron tunneling based arithmetic computation

    NARCIS (Netherlands)

    Lageweg, C.R.

    2004-01-01

    In this dissertation we investigate the implementation of computer arithmetic operations with Single Electron Tunneling (SET) technology based circuits. In our research we focus on the effective utilization of the SET technologys specific characteristic, i.e., the ability to control the transport of

  9. Tunneling of electrons through semiconductor superlattices

    Indian Academy of Sciences (India)

    C L Roy

    2002-11-01

    The purpose of the present paper is to report a study of tunneling of electrons through semiconductor superlattices (SSL); specially, we have analysed diverse features of transmission coefficient of SSL. The SSL we have considered is Ga0.7Al0.3As–GaAs which has been drawing considerable attention during the recent past on account of some typical features of its band structure. We have indicated how our results would help fabrication of ultra high speed devices.

  10. Selection of Electronic Resources.

    Science.gov (United States)

    Weathers, Barbara

    1998-01-01

    Discusses the impact of electronic resources on collection development; selection of CD-ROMs, (platform, speed, video and sound, networking capability, installation and maintenance); selection of laser disks; and Internet evaluation (accuracy of content, authority, objectivity, currency, technical characteristics). Lists Web sites for evaluating…

  11. Mobile Ventilation as a Tactic Resource at Tunnel Fires

    OpenAIRE

    Kumm, Mia; Bergqvist, Anders

    2008-01-01

    An emergency operation in case of a tunnel fire can easily become a complex operation. The objectives are to save people in danger, save the tunnel and its installations as well as vehicles trapped inside the tunnel and also, if it’s possible and necessary, reduce the effects on the environment. The strategy and the tactics in an emergency operation are very much depending on the specific tunnel, the fire behaviour and the resources from the fire brigade. One of the key factors is to ventilat...

  12. Electronic Resource Management Systems

    Directory of Open Access Journals (Sweden)

    Mark Ellingsen

    2004-10-01

    Full Text Available Computer applications which deal with electronic resource management (ERM are quite a recent development. They have grown out of the need to manage the burgeoning number of electronic resources particularly electronic journals. Typically, in the early years of e-journal acquisition, library staff provided an easy means of accessing these journals by providing an alphabetical list on a web page. Some went as far as categorising the e-journals by subject and then grouping the journals either on a single web page or by using multiple pages. It didn't take long before it was recognised that it would be more efficient to dynamically generate the pages from a database rather than to continually edit the pages manually. Of course, once the descriptive metadata for an electronic journal was held within a database the next logical step was to provide administrative forms whereby that metadata could be manipulated. This in turn led to demands for incorporating more information and more functionality into the developing application.

  13. Wind Tunnel Management and Resource Optimization: A Systems Modeling Approach

    Science.gov (United States)

    Jacobs, Derya, A.; Aasen, Curtis A.

    2000-01-01

    Time, money, and, personnel are becoming increasingly scarce resources within government agencies due to a reduction in funding and the desire to demonstrate responsible economic efficiency. The ability of an organization to plan and schedule resources effectively can provide the necessary leverage to improve productivity, provide continuous support to all projects, and insure flexibility in a rapidly changing environment. Without adequate internal controls the organization is forced to rely on external support, waste precious resources, and risk an inefficient response to change. Management systems must be developed and applied that strive to maximize the utility of existing resources in order to achieve the goal of "faster, cheaper, better". An area of concern within NASA Langley Research Center was the scheduling, planning, and resource management of the Wind Tunnel Enterprise operations. Nine wind tunnels make up the Enterprise. Prior to this research, these wind tunnel groups did not employ a rigorous or standardized management planning system. In addition, each wind tunnel unit operated from a position of autonomy, with little coordination of clients, resources, or project control. For operating and planning purposes, each wind tunnel operating unit must balance inputs from a variety of sources. Although each unit is managed by individual Facility Operations groups, other stakeholders influence wind tunnel operations. These groups include, for example, the various researchers and clients who use the facility, the Facility System Engineering Division (FSED) tasked with wind tunnel repair and upgrade, the Langley Research Center (LaRC) Fabrication (FAB) group which fabricates repair parts and provides test model upkeep, the NASA and LARC Strategic Plans, and unscheduled use of the facilities by important clients. Expanding these influences horizontally through nine wind tunnel operations and vertically along the NASA management structure greatly increases the

  14. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent;

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

  15. Distribution of tunnelling times for quantum electron transport

    Science.gov (United States)

    Rudge, Samuel L.; Kosov, Daniel S.

    2016-03-01

    In electron transport, the tunnelling time is the time taken for an electron to tunnel out of a system after it has tunnelled in. We define the tunnelling time distribution for quantum processes in a dissipative environment and develop a practical approach for calculating it, where the environment is described by the general Markovian master equation. We illustrate the theory by using the rate equation to compute the tunnelling time distribution for electron transport through a molecular junction. The tunnelling time distribution is exponential, which indicates that Markovian quantum tunnelling is a Poissonian statistical process. The tunnelling time distribution is used not only to study the quantum statistics of tunnelling along the average electric current but also to analyse extreme quantum events where an electron jumps against the applied voltage bias. The average tunnelling time shows distinctly different temperature dependence for p- and n-type molecular junctions and therefore provides a sensitive tool to probe the alignment of molecular orbitals relative to the electrode Fermi energy.

  16. Excitation of plasmonic nanoantennas by nonresonant and resonant electron tunnelling

    Science.gov (United States)

    Uskov, Alexander V.; Khurgin, Jacob B.; Protsenko, Igor E.; Smetanin, Igor V.; Bouhelier, Alexandre

    2016-07-01

    A rigorous theory of photon emission generated by inelastic electron tunnelling inside the gap of plasmonic nanoantennas is developed. The disappointingly low efficiency of the electrical excitation of surface plasmon polaritons in these structures can be increased by orders of magnitude when a resonant tunnelling structure is incorporated inside the gap. A resonant tunnelling assisted surface plasmon emitter may become a key element in future electrically-driven plasmonic nanocircuits.A rigorous theory of photon emission generated by inelastic electron tunnelling inside the gap of plasmonic nanoantennas is developed. The disappointingly low efficiency of the electrical excitation of surface plasmon polaritons in these structures can be increased by orders of magnitude when a resonant tunnelling structure is incorporated inside the gap. A resonant tunnelling assisted surface plasmon emitter may become a key element in future electrically-driven plasmonic nanocircuits. Electronic supplementary information (ESI) available: Plasmonic mode in nanowires, the probability of stimulated emission in tunnelling through the Fermi's Golden Rule and electron wave functions in tunnelling structures with nonresonant and resonant tunnelling. See DOI: 10.1039/c6nr01931e

  17. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.;

    2002-01-01

    The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended on ru...

  18. Quantum tunneling and field electron emission theories

    CERN Document Server

    Liang, Shi-Dong

    2013-01-01

    Quantum tunneling is an essential issue in quantum physics. Especially, the rapid development of nanotechnology in recent years promises a lot of applications in condensed matter physics, surface science and nanodevices, which are growing interests in fundamental issues, computational techniques and potential applications of quantum tunneling. The book involves two relevant topics. One is quantum tunneling theory in condensed matter physics, including the basic concepts and methods, especially for recent developments in mesoscopic physics and computational formulation. The second part is the f

  19. Electron tunnelling through a quantifiable barrier of variable width

    Energy Technology Data Exchange (ETDEWEB)

    Wyatt, A F G [School of Physics, University of Exeter, Exeter, EX4 4QL (United Kingdom); Bromberger, H; Klier, J; Leiderer, P; Zech, M [Faculty of Physics, University of Konstanz, Konstanz 78457 (Germany)], E-mail: a.f.g.wyatt@exeter.ac.uk

    2009-02-01

    This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of {sup 3}He on Cs{sub 1} which it wets. We excite photoelectrons which have to tunnel through the barrier to escape. The image potential must be included in calculating the barrier and hence the tunnelling current. This has been a debatable point until now. We confirm that an electron has a potential of 1.0 eV in liquid 3He for short times before a bubble forms. We show that the thickness of the {sup 3}He is given by thermodynamics for films of thickness at least down to 3 monolayers.

  20. Electron tunnelling through a quantifiable barrier of variable width

    Science.gov (United States)

    Wyatt, A. F. G.; Bromberger, H.; Klier, J.; Leiderer, P.; Zech, M.

    2009-02-01

    This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of 3He on Cs1 which it wets. We excite photoelectrons which have to tunnel through the barrier to escape. The image potential must be included in calculating the barrier and hence the tunnelling current. This has been a debatable point until now. We confirm that an electron has a potential of 1.0 eV in liquid 3He for short times before a bubble forms. We show that the thickness of the 3He is given by thermodynamics for films of thickness at least down to 3 monolayers.

  1. Electron tunnelling through a quantifiable barrier of variable width

    International Nuclear Information System (INIS)

    This is the first study of electron tunnelling through a quantifiable barrier of adjustable width. We find quantitative agreement between the measured and calculated tunnelling probability with no adjustable constants. The tunnel barrier is a thin film of 3He on Cs1 which it wets. We excite photoelectrons which have to tunnel through the barrier to escape. The image potential must be included in calculating the barrier and hence the tunnelling current. This has been a debatable point until now. We confirm that an electron has a potential of 1.0 eV in liquid 3He for short times before a bubble forms. We show that the thickness of the 3He is given by thermodynamics for films of thickness at least down to 3 monolayers.

  2. Electron-Photon interaction in resonant tunneling diodes

    OpenAIRE

    Inarrea, Jesus; Aguado, Ramon; Platero, Gloria

    1997-01-01

    We develope a model to describe the transmission coefficient and tunneling current in the presence of photon-electron coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between electronic states with different wave numbers. This is crutial to explain the experimental features observed in the tunneling current through a double barrier which cannot be reproduced with more simplified established models. According to our results, what exper...

  3. Scanning tunneling spectroscopy on electron-boson interactions in superconductors

    CERN Document Server

    Schackert, Michael Peter

    2015-01-01

    This work describes the experimental study of electron-boson interactions in superconductors by means of inelastic electron tunneling spectroscopy performed with a scanning tunneling microscope (STM) at temperatures below 1 K. This new approach allows the direct measurement of the Eliashberg function of conventional superconductors as demonstrated on lead (Pb) and niobium (Nb). Preparative experiments on unconventional iron-pnictides are presented in the end.

  4. Single electron tunneling in double and triple quantum wells

    Science.gov (United States)

    Filikhin, I.; Karoui, A.; Vlahovic, B.

    2016-03-01

    Electron localization and tunneling in laterally distributed double quantum well (DQW) and triple quantum well (TQW) are studied. Triangular configuration for the TQWs as well as various quantum well (QW) shapes and asymmetry are considered. The effect of adding a third well to a DQW is investigated as a weakly coupled system. InAs/GaAs DQWs and TQWs were modeled using single subband effective mass approach with effective potential simulating the strain effect. Electron localization dynamics in DQW and TQW over the whole spectrum is studied by varying the inter-dot distances. The electron tunneling appeared highly sensitive to small violations of the DQW mirror symmetry. We show that the presence of a third dot increases the tunneling in the DQW. The dependence of the tunneling in quantum dot (QD) arrays on inter-dot distances is also discussed.

  5. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  6. Electron tunnelling into amorphous germanium and silicon.

    Science.gov (United States)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  7. To the theory of coherent resonance tunneling of interacting electrons

    International Nuclear Information System (INIS)

    In terms of the model of coherent tunneling of interacting electrons one determined analytical solutions for the Schroedinger equation for a two-barrier structure (a resonance and tunnel diode) with the open boundary conditions. One derived simple expressions for resonance current enabling to analyze the volt-ampere characteristics, hysteresis occurrence conditions and its peculiarities depending on the parameters of a resonance-tunnel diode. Hysteresis is shown to be realized if current is higher than a certain critical value proportional to resonance level width square

  8. Electron-beam-assisted Scanning Tunneling Microscopy Of Insulating Surfaces

    CERN Document Server

    Bullock, E T

    2000-01-01

    Insulating materials are widely used in electronic devices. Bulk insulators and insulating films pose unique challenges for high resolution study since most commonly used charged particle surface analysis techniques are incompatible with insulating surfaces and materials. A, method of performing scanning tunneling microscopy (STM) on insulating surfaces has been investigated. The method is referred to as electron-beam assisted scanning tunneling microscopy (e-BASTM). It is proposed that by coupling the STM and the scanning electron microscopy (SEM) as one integrated device, that insulating materials may be studied, obtaining both high spatial resolution, and topographic and electronic resolution. The premise of the technique is based on two physical consequences of the interaction of an energetic electron beam (PE) with a material. First, when an electron beam is incident upon a material, low level material electrons are excited into conduction band states. For insulators, with very high secondary electron yi...

  9. Strong Electron Tunneling through a Small Metallic Grain

    OpenAIRE

    Golubev, D. S.; Zaikin, A. D.

    1996-01-01

    Electron tunneling through mesoscopic metallic grains can be treated perturbatively only provided the tunnel junction conductances are sufficiently small. If it is not the case, fluctuations of the grain charge become strong. As a result (i) contributions of all -- including high energy -- charge states become important and (ii) excited charge states become broadened and essentially overlap. At the same time the grain charge remains discrete and the system conductance $e$-periodically depends...

  10. Casimir-like tunnelling-induced electronic forces

    International Nuclear Information System (INIS)

    We study the quantum forces that act between two nearby conductors due to electronic tunnelling. We derive an expression for these forces by calculating the flux of momentum arising from the overlap of evanescent electronic fields. Our result is written in terms of the electronic reflection amplitudes of the conductors and it has the same structure as Lifshitz's formula for the electromagnetically mediated Casimir forces. We evaluate the tunnelling force between two semiinfinite conductors and between two thin films separated by an insulating gap. We discuss some applications of our results

  11. ELECTRONIC RESOURCES FOR THE HUMANITIES

    Directory of Open Access Journals (Sweden)

    Petrauskiene, Zibute

    2006-12-01

    Full Text Available Electronic information resources (EIR including electronic journals, books, and databases, as well as other different collections of information on the internet either paid or accessed for free withoutany doubt became one of the most important information resources in contemporary research and studies. The point is whether representatives of all fields of sciences use them with equal intensity and effectiveness. There is an opinion, that EIR are more applicable for physical, biomedical and technological sciences and representatives of these sciences are better prepared and use them much more extensively. It is thought that those, who study liberal arts, are technophobial, moreover, representatives of liberal arts themselves maintain that manuscript material is frequently moreimportant than electronic information, that books are primary and not articles.The aim of the article is to overview the peculiarity of representatives of liberal arts and to present an evaluated qualitative and acknowledged register of electronic information resources, which could be useful for representatives of liberal arts, ensure supplying of specific information needs and disseminate information about electronic information resources.To implement this goal the following tasks are solved in the article: problems of typology of electronic information resources are discussed and their original classification scheme presented based on theoretical and practical material; assessment criteria of electronic information resources are analyzed; an annotated list of electronic information resources for representatives of liberal arts is presented.The article may be relevant to the whole community of representatives of liberal arts: researchers, lecturers, students, as well as library specialists and others, interested in electronic information.

  12. Inelastic electron tunnelling and noise spectroscopies in organic magnetic tunnel junctions with PTCDA barrier

    Science.gov (United States)

    Aliev, Farkhad; Martinez, Isidoro; Hong, Jhen-Yong; Cascales, Juan Pedro; Andres, Pablo; Lin, Minn-Tsong

    2015-03-01

    The influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present inelastic electron tunnelling spectroscopy (IETS) and low frequency noise (LFN) studies in magnetic tunnel junctions with thin (1.2-5nm) organic PTCDA barriers in the tunnelling regime at temperatures down to 0.3K. Shot noise is superpoissonian with a Fano factor exceeding in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. IETS results show energy relaxation of tunneling electrons through the excitation of collective (librons) and internal (phonons) vibrational modes of the molecules. The bias dependence of the normalised 1/f noise studied up to 350mV reveals that the excitation of some phonon modes has a strong impact on LFN with over a 10-fold reproducible increase near some specific biases. The dependence of the IETS and LFN anomalies with the relative magnetic alignment of the electrodes will also be discussed.

  13. Thermal electron-tunneling devices as coolers and amplifiers

    Science.gov (United States)

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  14. Thermal electron-tunneling devices as coolers and amplifiers.

    Science.gov (United States)

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-01-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs' chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  15. Laser induced - tunneling, electron diffraction and molecular orbital imaging

    International Nuclear Information System (INIS)

    Full text: Multiphoton ionization in the tunneling limit is similar to tunneling in a scanning tunneling microscope. In both cases an electron wave packet tunnels from a bound (or valence) state to the continuum. I will show that multiphoton ionization provides a route to extend tunneling spectroscopy to the interior of transparent solids. Rotating the laser polarization is the analogue of scanning the STM tip - a means of measuring the crystal symmetry of a solid. In gas phase molecules the momentum spectrum of individual electrons can be measured. I will show that, as we rotate the molecule with respect to the laser polarization, the photoelectron spectrum samples a filter projection of the momentum wave function (the molecular analogue to the band structure) of the ionizing orbital. Some electrons created during multiphoton ionization re-collide with their parent ion. I will show that they diffract, revealing the scattering potential of the ion - the molecular structure. The electron can also interfere with the initial orbital from which it separated, creating attosecond XUV pulses or pulse trains. The amplitude and phase of the radiation contains all information needed to re-construct the image of the orbital (just as a sheared optical interferometer can fully characterize an optical pulse). Strong field methods provide an extensive range of new tools to apply to atomic, molecular and solid-state problems. (author)

  16. Internal switches modulating electron tunneling currents in respiratory complex III.

    Science.gov (United States)

    Hagras, Muhammad A; Stuchebrukhov, Alexei A

    2016-06-01

    In different X-ray crystal structures of bc1 complex, some of the key residues of electron tunneling pathways are observed in different conformations; here we examine their relative importance in modulating electron transfer and propose their possible gating function in the Q-cycle. The study includes inter-monomeric electron transfer; here we provide atomistic details of the reaction, and discuss the possible roles of inter-monomeric electronic communication in bc(1) complex. Binding of natural ligands or inhibitors leads to local conformational changes which propagate through protein and control the conformation of key residues involved in the electron tunneling pathways. Aromatic-aromatic interactions are highly utilized in the communication network since the key residues are aromatic in nature. The calculations show that there is a substantial change of the electron transfer rates between different redox pairs depending on the different conformations acquired by the key residues of the complex.

  17. Exploring the fractional quantum Hall effect with electron tunneling

    OpenAIRE

    Fradkin, Eduardo

    1999-01-01

    In this talk I present a summary of recent work on tunnel junctions of a fractional quantum Hall fluid and an electron reservoir, a Fermi liquid. I consider first the case of a single point contact. This is a an exactly solvable problem from which much can be learned. I also discuss in some detail how these solvable junction problems can be used to understand many aspects of the recent electron tunneling experiments into edge states. I also give a detailed picture of the unusual behavior of t...

  18. Electron Transport and Tunneling in Single Walled Carbon Nanotube Devices

    Science.gov (United States)

    Dirks, Travis; Mason, Nadya

    2007-03-01

    Carbon nanotubes remain a fertile ground for the exploration of interacting one-dimensional (1D) physics and Tomonaga-Luttinger liquid theory. Much is still unknown about the factors that influence the transport and tunneling properties of interacting 1D systems such as nanotubes. We report on experiments that use techniques such as multiple contacts on long nanotubes and tunable tunnel barriers to determine how the manifestations of electron-electron interactions, such as the zero-bias anomaly, depend on the length and defect strength in nanotubes.

  19. Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

    NARCIS (Netherlands)

    Jansen, R.; Banerjee, T.; Park, B.G.; Lodder, J.C.

    2007-01-01

    The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid stat

  20. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz

  1. Giant tunnel-electron injection in nitrogen-doped graphene

    DEFF Research Database (Denmark)

    Lagoute, Jerome; Joucken, Frederic; Repain, Vincent;

    2015-01-01

    Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneli...

  2. Simulation of single-electron tunnelling circuits using SPICE

    NARCIS (Netherlands)

    Van de Haar, R.

    2004-01-01

    Single-electron tunnelling (SET) devices have very promising properties, like their extremely low power consumption, their extremely high switching speeds and their extremely small physical dimensions. Since the field of SET devices is far from being fully exploited, and their device properties seem

  3. Scanning Tunneling Electron Transport into a Kondo Lattice

    Science.gov (United States)

    Yang, Fu-Bin; Wu, Hua

    2016-05-01

    We theoretically present the results for a scanning tunneling transport between a metallic tip and a Kondo lattice. We calculate the density of states (DOS) and the tunneling current and differential conductance (DC) under different conduction-fermion band hybridization and temperature in the Kondo lattice. It is found that the hybridization strength and temperature give asymmetric coherent peaks in the DOS separated by the Fermi energy. The corresponding current and DC intensity depend on the temperature and quantum interference effect among the c-electron and f-electron states in the Kondo lattice. Supported by the National Natural Science Foundation of China under Grant No. 11547203, and the Research Project of Education Department in Sichuan Province of China under Grant No. 15ZB0457

  4. Spin dependent electron transport through a magnetic resonant tunneling diode

    OpenAIRE

    Havu, Paula; Tuomisto, Noora; Vaananen, Riikka; Puska, Martti J.; Nieminen, Risto M.

    2004-01-01

    Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green...

  5. Thin-film chemical sensors based on electron tunneling

    Science.gov (United States)

    Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

    1985-01-01

    The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

  6. First Principles Study of Electron Tunneling through Ice

    KAUST Repository

    Cucinotta, Clotilde S.

    2012-10-25

    With the aim of understanding electrochemical scanning tunnel microscopy experiments in an aqueous environment, we investigate electron transport through ice in the coherent limit. This is done by using the nonequilibrium Greens functions method, implemented within density functional theory, in the self-interaction corrected local density approximation. In particular, we explore different ice structures and different Au electrode surface orientations. By comparing the decay coefficient for different thicknesses to the ice complex band structure, we find that the electron transport occurs via tunneling with almost one-dimensional character. The slow decay of the current with the ice thickness is largely due to the small effective mass of the conduction electrons. Furthermore, we find that the calculated tunneling decay coefficients at the Fermi energy are not sensitive to the structural details of the junctions and are at the upper end of the experimental range for liquid water. This suggests that linear response transport measurements are not capable of distinguishing between different ordered ice structures. However, we also demonstrate that a finite bias measurement may be capable of sorting polar from nonpolar interfaces due to the asymmetry of the current-voltage curves for polar interfaces. © 2012 American Chemical Society.

  7. Scanning tunneling microscopy and inelastic electron tunneling spectroscopy studies of methyl isocyanide adsorbed on Pt(111)

    International Nuclear Information System (INIS)

    A low-temperature scanning tunneling microscope (STM) was used to investigate the adsorption state of a single methyl isocyanide (MeNC) molecule on the Pt(111) surface at 4.7 K. We found that MeNC was resolved as a round-shaped protrusion in the STM image. The STM image of paired MeNC is highly protruded in comparison with that of isolated MeNC due to the charge transfer from Pt to MeNC. Inelastic electron tunneling spectroscopy with the STM system (STM-IETS) was also employed in order to reveal the adsorption state of individual MeNC molecules on Pt(111). The STM-IETS spectrum of MeNC exhibits peaks at 8, 48 and 375 mV. Referring to the vibrational spectra reported previously, we assigned these peaks to the frustrated translation mode, PtC stretching mode and CH3 stretching mode, respectively. The absence of other vibrational modes could be due to a reduction of the elastic tunneling current.

  8. Strong Coupling Between Single-Electron Tunneling and Nanomechanical Motion

    Science.gov (United States)

    Steele, G. A.; Hüttel, A. K.; Witkamp, B.; Poot, M.; Meerwaldt, H. B.; Kouwenhoven, L. P.; van der Zant, H. S. J.

    2009-08-01

    Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio frequency potential using a nearby antenna. Single-electron charge fluctuations created periodic modulations of the mechanical resonance frequency. A quality factor exceeding 105 allows the detection of a shift in resonance frequency caused by the addition of a single-electron charge on the nanotube. Additional evidence for the strong coupling of mechanical motion and electron tunneling is provided by an energy transfer to the electrons causing mechanical damping and unusual nonlinear behavior. We also discovered that a direct current through the nanotube spontaneously drives the mechanical resonator, exerting a force that is coherent with the high-frequency resonant mechanical motion.

  9. Strong coupling between single-electron tunneling and nanomechanical motion.

    Science.gov (United States)

    Steele, G A; Hüttel, A K; Witkamp, B; Poot, M; Meerwaldt, H B; Kouwenhoven, L P; van der Zant, H S J

    2009-08-28

    Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio frequency potential using a nearby antenna. Single-electron charge fluctuations created periodic modulations of the mechanical resonance frequency. A quality factor exceeding 10(5) allows the detection of a shift in resonance frequency caused by the addition of a single-electron charge on the nanotube. Additional evidence for the strong coupling of mechanical motion and electron tunneling is provided by an energy transfer to the electrons causing mechanical damping and unusual nonlinear behavior. We also discovered that a direct current through the nanotube spontaneously drives the mechanical resonator, exerting a force that is coherent with the high-frequency resonant mechanical motion.

  10. Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

    OpenAIRE

    TEWORDT, M; MARTINMORENO, L; Nicholls, J T; Pepper, M.; Kelly, M J; Law, V.J.; Ritchie, D. A.; Frost, J. E. F.; Jones, G.A.C.

    1993-01-01

    Resonant tunneling is studied in an ultrasmall asymmetric GaAs-AlxGa1-xAs double-barrier diode at low temperatures. In reverse bias, spikelike current-voltage characteristics are observed and assigned to electrons tunneling from zero-dimensional (OD) states in the accumulation layer to OD states in the well. The OD-OD tunneling reflects the single-electron spectrum without Coulomb charging effects. In forward bias, steplike current-voltage characteristics are observed and ascribed to tunnelin...

  11. Electron-phonon scattering in molecular electronics: from inelastic electron tunnelling spectroscopy to heating effects

    Energy Technology Data Exchange (ETDEWEB)

    Gagliardi, Alessio; Frauenheim, Thomas; Niehaus, Thomas A [Bremen Center for Computational Materials Science, University of Bremen, D-28359 Bremen (Germany); Romano, Giuseppe; Pecchia, Alessandro; Di Carlo, Aldo [CNR-INFM Department of Electronics Engineering, University of Rome ' Tor Vergata' , Via del Politecnico 1, 00133 Rome (Italy)], E-mail: gagliard@bccms.uni-bremen.de, E-mail: Gagliardi@Ing.uniroma2.it

    2008-06-15

    In this paper, we investigate dissipation in molecular electronic devices. Dissipation is a crucial quantity which determines the stability and heating of the junction. Moreover, several experimental techniques which use inelastically scattered electrons as probes to investigate the geometry in the junction are becoming fundamental in the field. In order to describe such physical effects, a non-equilibrium Green's function (NEGF) method was implemented to include scattering events between electrons and molecular vibrations in current simulations. It is well known that the final heating of the molecule depends also on the ability of the molecule to relax vibrational quanta into the contact reservoirs. A semi-classical rate equation has been implemented and integrated within the NEGF formalism to include this relaxation. The model is based on two quantities: (i) the rate of emission of phonons in the junction by electron-phonon scattering and (ii) a microscopic approach for the computation of the phonon decay rate, accounting for the dynamical coupling between the vibrational modes localized on the molecule and the contact phonons. The method is applied to investigate inelastic electron tunnelling spectroscopy (IETS) signals in CO molecules on Cu(110) substrates as well as dissipation in C{sub 60} molecules on Cu(110) and Si(100) surfaces. It is found that the mechanisms of energy relaxation are highly mode-specific and depend crucially on the lead electronic structure and junction geometry.

  12. Electron-phonon scattering in molecular electronics: from inelastic electron tunnelling spectroscopy to heating effects

    International Nuclear Information System (INIS)

    In this paper, we investigate dissipation in molecular electronic devices. Dissipation is a crucial quantity which determines the stability and heating of the junction. Moreover, several experimental techniques which use inelastically scattered electrons as probes to investigate the geometry in the junction are becoming fundamental in the field. In order to describe such physical effects, a non-equilibrium Green's function (NEGF) method was implemented to include scattering events between electrons and molecular vibrations in current simulations. It is well known that the final heating of the molecule depends also on the ability of the molecule to relax vibrational quanta into the contact reservoirs. A semi-classical rate equation has been implemented and integrated within the NEGF formalism to include this relaxation. The model is based on two quantities: (i) the rate of emission of phonons in the junction by electron-phonon scattering and (ii) a microscopic approach for the computation of the phonon decay rate, accounting for the dynamical coupling between the vibrational modes localized on the molecule and the contact phonons. The method is applied to investigate inelastic electron tunnelling spectroscopy (IETS) signals in CO molecules on Cu(110) substrates as well as dissipation in C60 molecules on Cu(110) and Si(100) surfaces. It is found that the mechanisms of energy relaxation are highly mode-specific and depend crucially on the lead electronic structure and junction geometry

  13. Electron tunneling in single layer graphene with an energy gap

    Institute of Scientific and Technical Information of China (English)

    Xu Xu-Guang; Zhang Chao; Xu Gong-Jie; Cao Jun-Cheng

    2011-01-01

    When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

  14. Coherence Time Resolvable Diffraction and New Tunnelling Electronics

    Institute of Scientific and Technical Information of China (English)

    易林

    2002-01-01

    With the help of the perturbation method and the Feynman path integral technique, we analytically demonstrate that, when the electronic spectrum of a mesoscopic box is measured through two connecting leads, there exists a class of new diffraction phenomena in the coherence time domain, based on the new coherent tunnelling model.It is shown that the new diffraction effect determines the minimal resolvable coherence time to the Heisenberg limit. In particular, Fraunhofer optical phenomena, such as missing order and grating effects, can be reproduced in the meso-systems. The predicted periodic oscillations as a function of voltage are in excellent agreement with experimental observations.

  15. Resonant tunneling of interacting electrons in an AC electric field

    International Nuclear Information System (INIS)

    The problem of the effect of electron-electron interaction on the static and dynamic properties of a double-barrier nanostructure (resonant tunneling diode (RTD)) is studied in terms of a coherent tunneling model, which includes a set of Schrödinger and Poisson equations with open boundary conditions. Explicit analytical expressions are derived for dc and ac potentials and reduced (active and reactive) currents in the quasi-classical approximation over a wide frequency range. These expressions are used to analyze the frequency characteristics of RTD. It is shown that the interaction can radically change the form of these expressions, especially in the case of a hysteretic I-V characteristic. In this case, the active current and the ac potentials can increase sharply at both low and high frequencies. For this increase to occur, it is necessary to meet quantum regime conditions and to choose a proper working point in the I-V characteristic of RTD. The possibility of appearance of specific plasma oscillations, which can improve the high-frequency characteristics of RTD, is predicted. It is found that the active current can be comparable with the resonant dc current of RTD

  16. Resonant tunneling of interacting electrons in an AC electric field

    Energy Technology Data Exchange (ETDEWEB)

    Elesin, V. F., E-mail: VFElesin@mephi.ru [National Research Nuclear University MEPhI (Russian Federation)

    2013-11-15

    The problem of the effect of electron-electron interaction on the static and dynamic properties of a double-barrier nanostructure (resonant tunneling diode (RTD)) is studied in terms of a coherent tunneling model, which includes a set of Schrödinger and Poisson equations with open boundary conditions. Explicit analytical expressions are derived for dc and ac potentials and reduced (active and reactive) currents in the quasi-classical approximation over a wide frequency range. These expressions are used to analyze the frequency characteristics of RTD. It is shown that the interaction can radically change the form of these expressions, especially in the case of a hysteretic I-V characteristic. In this case, the active current and the ac potentials can increase sharply at both low and high frequencies. For this increase to occur, it is necessary to meet quantum regime conditions and to choose a proper working point in the I-V characteristic of RTD. The possibility of appearance of specific plasma oscillations, which can improve the high-frequency characteristics of RTD, is predicted. It is found that the active current can be comparable with the resonant dc current of RTD.

  17. Tunneling electron induced luminescence from porphyrin molecules on monolayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Geng, Feng; Kuang, Yanmin; Yu, Yunjie; Liao, Yuan; Zhang, Yao; Zhang, Yang; Dong, Zhenchao, E-mail: zcdong@ustc.edu.cn

    2015-01-15

    Using epitaxially grown graphene on Ru(0001) as a decoupling layer, we investigate the evolution of tunneling electron induced luminescence from different number of layers of porphyrin molecules. Light emission spectra and photon maps, acquired via a combined optical setup with scanning tunneling microscopy (STM), indicate that the electronic decoupling effect of a monolayer (ML) graphene alone is still insufficient for generating molecule-specific emission from both the 1st- and 2nd-layer porphyrin molecules. Nevertheless, interestingly, the plasmonic emission is enhanced for the 1st-layer but suppressed for the 2nd-layer in comparison with the plasmonic emission on the monolayer graphene. Intrinsic intramolecular molecular fluorescence occurs at the 3rd-layer porphyrin. Such molecular thickness is about two MLs thinner than previous reports where molecules were adsorbed directly on metals. These observations suggest that the monolayer graphene does weaken the interaction between molecule and metal substrate and contribute to the reduction of nonradiative decay rates. - Highlights: • Showing molecularly resolved photon maps of graphene and porphyrins on it. • Revealing the influence of spacer thickness on molecular electroluminescence. • Graphene does weaken the interaction between molecules and metal substrate.

  18. Managing electronic resources a LITA guide

    CERN Document Server

    Weir, Ryan O

    2012-01-01

    Informative, useful, current, Managing Electronic Resources: A LITA Guide shows how to successfully manage time, resources, and relationships with vendors and staff to ensure personal, professional, and institutional success.

  19. Two-photon Induced Hot Electron Transfer to a Single Molecule in a Scanning Tunneling Microscope

    OpenAIRE

    Wu, Shiwei; Ho, Wilson

    2010-01-01

    The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photo-excited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule on the surface, converting it from the neutral to the anion. The electron transfer rate depends quadratically on the incident laser power, suggesting a two-photon excitation process. This nonlinear optical process is further confirmed by the polarization me...

  20. Electronic Resource Management Systems in Practice

    Science.gov (United States)

    Grogg, Jill E.

    2008-01-01

    Electronic resource management (ERM) systems have inundated the library marketplace. Both integrated library systems (ILS) vendors and subscription agents are now offering products and service enhancements that claim to help libraries efficiently manage their electronic resources. Additionally, some homegrown and open-source solutions have emerged…

  1. Implementing CORAL: An Electronic Resource Management System

    Science.gov (United States)

    Whitfield, Sharon

    2011-01-01

    A 2010 electronic resource management survey conducted by Maria Collins of North Carolina State University and Jill E. Grogg of University of Alabama Libraries found that the top six electronic resources management priorities included workflow management, communications management, license management, statistics management, administrative…

  2. Electronic Single Molecule Identification of Carbohydrate Isomers by Recognition Tunneling

    CERN Document Server

    Im, JongOne; Liu, Hao; Zhao, Yanan; Sen, Suman; Biswas, Sudipta; Ashcroft, Brian; Borges, Chad; Wang, Xu; Lindsay, Stuart; Zhang, Peiming

    2016-01-01

    Glycans play a central role as mediators in most biological processes, but their structures are complicated by isomerism. Epimers and anomers, regioisomers, and branched sequences contribute to a structural variability that dwarfs those of nucleic acids and proteins, challenging even the most sophisticated analytical tools, such as NMR and mass spectrometry. Here, we introduce an electron tunneling technique that is label-free and can identify carbohydrates at the single-molecule level, offering significant benefits over existing technology. It is capable of analyzing sub-picomole quantities of sample, counting the number of individual molecules in each subset in a population of coexisting isomers, and is quantitative over more than four orders of magnitude of concentration. It resolves epimers not well separated by ion-mobility and can be implemented on a silicon chip. It also provides a readout mechanism for direct single-molecule sequencing of linear oligosaccharides.

  3. Tunneling electron induced chemisorption of copper phthalocyanine molecules on the Cu(111) surface

    International Nuclear Information System (INIS)

    The adsorption of up to one monolayer (ML) of copper phthalocyanine (CuPc) molecules on a room temperature Cu(111) surface has been studied using scanning tunneling microscopy (STM). Below 1 ML the molecules are in a fluid state and are highly mobile on the surface. At 1 ML coverage the molecules coalesce into a highly ordered 2D crystal phase. At sub-ML coverages, chemisorption of individual CuPc molecules can be induced through exposure to tunneling electrons at a tunneling bias voltage exceeding a threshold value. This tunneling electron induced effect has been exploited to perform molecular STM lithography

  4. Optical Blocking of Electron Tunneling into a Single Self-Assembled Quantum Dot

    Science.gov (United States)

    Kurzmann, A.; Merkel, B.; Labud, P. A.; Ludwig, A.; Wieck, A. D.; Lorke, A.; Geller, M.

    2016-07-01

    Time-resolved resonance fluorescence (RF) is used to analyze electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxation rate for electron tunneling is, surprisingly, independent of the occupation in the charge reservoir—in contrast to results from all-electrical transport measurements. Using a master equation approach, which includes both the electron tunneling and the optical excitation or recombination, we are able to explain the experimental data by optical blocking, which also reduces the electron tunneling rate when the QD is occupied by an exciton.

  5. Infrared catastrophe and tunneling into strongly correlated electron systems: Beyond the x-ray edge limit

    OpenAIRE

    Patton, Kelly R.; Geller, Michael R.

    2005-01-01

    We develop a nonperturbative method to calculate the electron propagator in low-dimensional and strongly correlated electron systems. The method builds on our earlier work using a Hubbard-Stratonovich transformation to map the tunneling problem to the x-ray edge problem, which accounts for the infrared catastrophe caused by the sudden introduction of a new electron into a conductor during a tunneling event. Here we use a cumulant expansion to include fluctuations about this x-ray edge limit. ...

  6. Coherent electron transparent tunneling through a single barrier within a Fabry-Perot cavity

    Science.gov (United States)

    Stolle, Jason; Baum, Chaz; Amann, Ryan; Haman, Ryan; Call, Tanner; Li, Wei

    2016-07-01

    Electromagnetic wave and quantum DeBroglie wave have many parallels between each other. We investigate the quantum mechanical counterpart of electromagnetic resonant tunneling through a non-absorbing metal layer. It is confirmed that an electron also has transparent transmission through a single barrier within a Fabry-Perot like cavity. This tunneling structure is actually a distortion of the Fabry-Perot echelon. We find that for a specific resonant electron energy, the cavity length is related to the electron's DeBroglie wavelength; and the single barrier can be located at a series positions with an interval equal to a half of the DeBroglie wavelength, not just at the center of the cavity. This tunneling phenomenon will have novel applications in quantum devices such as the resonant tunneling diode and scanning tunneling microscope. The results of this paper should also have impact on related electromagnetic research and application.

  7. Resource Letter: TE-1: Teaching electronics

    Science.gov (United States)

    Henry, Dennis C.

    2002-01-01

    This Resource Letter examines the evolution, roles, and content of courses in electronics in the undergraduate physics curriculum, and provides a guide to resources for faculty teaching such courses. It concludes with a brief section addressing problems of electromagnetic interference in electronic systems, and provides an introduction to the literature and practice of electromagnetic compatibility. I have included textbooks, reference books, articles, collections of laboratory experiments and projects, sources of equipment and parts, software packages, videos, and websites.

  8. Integrated NIS electron-tunnelling refrigerator/superconducting bolometer

    International Nuclear Information System (INIS)

    We describe progress in the development of a close-packed array of bolometers designed for use in photometric applications at millimeter wavelengths from ground-based telescopes. Each bolometer in the array will use a proximity-effect Transition Edge Sensor (TES) sensing element and each will have integrated Normal-Insulator-Superconductor (NIS) refrigerators to cool the bolometer below the thermal reservoir temperature. The NIS refrigerators and acoustic-phonon-mode-isolated bolometers are fabricated on silicon. The radiation absorbing element is mechanically suspended by four legs, whose dimensions are used to control and optimize the thermal conductance of the bolometer. Using the technology developed at NIST, we fabricate NIS refrigerators at the base of each of the suspension legs. The NIS refrigerators remove hot electrons by quantum-mechanical tunneling and are expected to cool the biased (10pW) bolometers to 3He-cooled cryostat operating at ∼280mK. This significantly lower temperature at the bolometer allows the detectors to approach background-limited performance despite the simple cryogenic system

  9. Electronic Single Molecule Measurements with the Scanning Tunneling Microscope

    Science.gov (United States)

    Im, Jong One

    Richard Feynman said "There's plenty of room at the bottom". This inspired the techniques to improve the single molecule measurements. Since the first single molecule study was in 1961, it has been developed in various field and evolved into powerful tools to understand chemical and biological property of molecules. This thesis demonstrates electronic single molecule measurement with Scanning Tunneling Microscopy (STM) and two of applications of STM; Break Junction (BJ) and Recognition Tunneling (RT). First, the two series of carotenoid molecules with four different substituents were investigated to show how substituents relate to the conductance and molecular structure. The measured conductance by STM-BJ shows that Nitrogen induces molecular twist of phenyl distal substituents and conductivity increasing rather than Carbon. Also, the conductivity is adjustable by replacing the sort of residues at phenyl substituents. Next, amino acids and peptides were identified through STM-RT. The distribution of the intuitive features (such as amplitude or width) are mostly overlapped and gives only a little bit higher separation probability than random separation. By generating some features in frequency and cepstrum domain, the classification accuracy was dramatically increased. Because of large data size and many features, supporting vector machine (machine learning algorithm for big data) was used to identify the analyte from a data pool of all analytes RT data. The STM-RT opens a possibility of molecular sequencing in single molecule level. Similarly, carbohydrates were studied by STM-RT. Carbohydrates are difficult to read the sequence, due to their huge number of possible isomeric configurations. This study shows that STM-RT can identify not only isomers of mono-saccharides and disaccharides, but also various mono-saccharides from a data pool of eleven analytes. In addition, the binding affinity between recognition molecule and analyte was investigated by comparing with

  10. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides.

    Science.gov (United States)

    Das, Saptarshi; Prakash, Abhijith; Salazar, Ramon; Appenzeller, Joerg

    2014-02-25

    In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform numerical calculations based on Landauer formalism and WKB approximation to explain our experimental findings. Based on our simple model, we discuss the impact of band gap and effective mass on the band-to-band tunneling current and evaluate the performance limits for a set of dichalcogenides in the context of tunneling transistors for low-power applications. Our findings suggest that WTe2 is an excellent choice for tunneling field-effect transistors. PMID:24392853

  11. Infrared catastrophe and tunneling into strongly correlated electron systems: Perturbative x-ray edge limit

    OpenAIRE

    Patton, Kelly R.; Geller, Michael R.

    2005-01-01

    The tunneling density of states exhibits anomalies (cusps, algebraic suppressions, and pseudogaps) at the Fermi energy in a wide variety of low-dimensional and strongly correlated electron systems. We argue that in many cases these spectral anomalies are caused by an infrared catastrophe in the screening response to the sudden introduction of a new electron into the system during a tunneling event. A nonperturbative functional-integral method is introduced to account for this effect, making u...

  12. Fluorescence and phosphorescence from individual C$_{60}$ molecules excited by local electron tunneling

    OpenAIRE

    Ćavar, Elizabeta; Blüm, Marie-Christine; Pivetta, Marina; Patthey, François; Chergui, Majed; Schneider, Wolf-Dieter

    2005-01-01

    Using the highly localized current of electrons tunneling through a double barrier Scanning Tunneling Microscope (STM) junction, we excite luminescence from a selected C$_{60}$ molecule in the surface layer of fullerene nanocrystals grown on an ultrathin NaCl film on Au(111). In the observed luminescence fluorescence and phosphorescence spectra, pure electronic as well as vibronically induced transitions of an individual C$_{60}$ molecule are identified, leading to unambiguous chemical recogn...

  13. Coulomb-mediated electron bunching in tunneling through coupled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kiesslich, G. [Institut fuer Theoretische Physik, Technische Universitaet Berlin, 10623 Berlin (Germany); School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Schoell, E. [Institut fuer Theoretische Physik, Technische Universitaet Berlin, 10623 Berlin (Germany); Hohls, F.; Haug, R.J. [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover, 30167 Hannover (Germany)

    2008-07-01

    The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Atomic scale imaging and spectroscopy of individual electron trap states using force detected dynamic tunnelling

    International Nuclear Information System (INIS)

    We report the first atomic scale imaging and spectroscopic measurements of electron trap states in completely non-conducting surfaces by dynamic tunnelling force microscopy/spectroscopy. Single electrons are dynamically shuttled to/from individual states in thick films of hafnium silicate and silicon dioxide. The new method opens up surfaces that are inaccessible to the scanning tunnelling microscope for imaging and spectroscopy on an atomic scale.

  15. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  16. Using electron-tunneling refrigerators to cool electrons, membranes, and sensors

    Science.gov (United States)

    Miller, Nathan A.

    Many cryogenic devices require temperatures near 100 mK for optimal performance, such as thin-film, superconducting detectors. Examples include the submillimeter SCUBA camera on the James Clerk Maxwell Telescope, high-resolution X-ray sensors for semiconductor defect analysis, and a planned satellite to search for polarization in the cosmic microwave background. The cost, size, and complexity of refrigerators used to reach 100 mK (dilution and adiabatic demagnetization refrigerators) are significant and alternative technologies are desirable. We demonstrate work on developing a new option for cooling detectors to 100 mK bath temperatures. Solid-state refrigerators based on Normal metal/Insulator/Superconductor (NIS) tunnel junctions can provide cooling from pumped 3He bath temperatures (˜300 mK) to 100 mK. The cooling mechanism is the preferential tunneling of the highest energy (hottest) electrons from the normal metal through the biased tunnel junctions into the superconductor. When NIS refrigerators are combined with a micro-machined membrane, both the electrons and phonons of the membrane can be cooled. We have developed NIS-cooled membranes with both large temperature reductions and large cooling powers. We have shown the first cooling of a bulk material by cooling a neutron transmutation doped (NTD) thermistor. The fabrication of NIS refrigerators can be integrated with existing detector technology. For the first time, we have successfully integrated NIS refrigerators with both mm-wave and X-ray detectors. In particular, we have cooled X-ray detectors by more than 100 mK and have achieved a resolution of cooling platform for microelectronics devices on separate chips.

  17. Antiresonance Effect in Electronic Tunnelling through a One-Dimensional Quantum Dot Chain

    Institute of Scientific and Technical Information of China (English)

    SUN Pu-Nan

    2006-01-01

    @@ Electronic tunnelling through a one-dimensional quantum dot chain is theoretically studied, when two leads couple to the individual component quantum dots of the chain arbitrarily. If there are some dangling quantum dots in the chain outside the leads, the electron tunnelling through the quantum dot chain is wholly forbidden while the energy of the incident electron is just equal to the molecular energy levels of the dangling quantum dots,which is known as the antiresonance effect. In addition, the influence of electron interaction on the antiresonance effect is discussed within the Hartree-Fock approximation.

  18. Electronic Resources in Ohio Prison Libraries.

    Science.gov (United States)

    LaPoint, Virginia A.

    Traditionally, libraries have had a role of providing equitable access for those who might not otherwise have access, and this role continues today in implementing access to electronic resources. However, there are special problems in applying this mission to prison libraries. A short history of automation in prison libraries is followed by a…

  19. Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

    OpenAIRE

    Das, Saptarshi; Prakash, Abhijith; Salazar, Ramon; Appenzeller, Joerg

    2014-01-01

    In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform numerical calculations based on Landauer formalism and WKB approximation to explain our experimental ...

  20. Tunneling electron induced rotation of a copper phthalocyanine molecule on Cu(111)

    OpenAIRE

    Schaffert, J.; Cottin, M. C.; Sonntag, A.; Bobisch, C. A.; Möller, Rolf; Gauyacq, J. P.; Lorente, N.

    2013-01-01

    The rates of a hindered molecular rotation induced by tunneling electrons are evaluated using scattering theory within the sudden approximation. Our approach explains the excitation of copper phthalocyanine molecules (CuPc) on Cu(111) as revealed in a recent measurement of telegraph noise in a scanning tunneling microscopy (STM) experiment [Schaffert \\textit{et al.}, Nat. Mat. {\\bf 12}, 223 (2013)]. A complete explanation of the experimental data is performed by computing the geometry of the ...

  1. Simulation of inelastic electron tunneling spectroscopy of single molecules with functionalized tips

    OpenAIRE

    García-Lekue, Aran; Sánchez-Portal, Daniel; Arnau, Andrés; Frederiksen, T.

    2011-01-01

    The role of the tip in inelastic electron tunneling spectroscopy (IETS) performed with scanning tunneling microscopes (STM) is theoretically addressed via first-principles simulations of vibrational spectra of single carbon monoxide (CO) molecules adsorbed on Cu(111). We show how chemically functionalized STM tips modify the IETS intensity corresponding to adsorbate modes on the sample side. The underlying propensity rules are explained using symmetry considerations for both the vibrational m...

  2. Magnetic-field-induced suppression of tunnelling into a two-dimensional electron system

    Energy Technology Data Exchange (ETDEWEB)

    Reker, T.; Chung, Y.C.; Im, H.; Klipstein, P.C.; Nicholas, R.J. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford (United Kingdom); Shtrikman, Hadas [Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot (Israel)

    2002-06-10

    Tunnelling between a three-dimensional emitter contact and a two-dimensional electron system (2DES) is studied in magnetic fields aligned perpendicular to the barriers of a double-barrier heterostructure. The differential conductance around the Fermi energy exhibits a magnetic-field-dependent pseudogap. This pseudogap is shown to be thermally activated and to depend on the two-dimensional electron density. We attribute this pseudogap to an extra energy that an electron tunnelling from the emitter into the 2DES has to overcome as a result of the correlated state of the 2DES. (author)

  3. Effect of ferroelectricity on electron transport in Pt/BaTiO3/Pt tunnel junctions.

    Science.gov (United States)

    Velev, J P; Duan, Chun-Gang; Belashchenko, K D; Jaswal, S S; Tsymbal, E Y

    2007-03-30

    Based on first-principles calculations, we demonstrate the impact of the electric polarization on electron transport in ferroelectric tunnel junctions (FTJs). Using a Pt/BaTiO3/Pt FTJ as a model system, we show that the polarization of the BaTiO3 barrier leads to a substantial drop in the tunneling conductance due to changes in the electronic structure driven by ferroelectric displacements. We find a sizable change in the transmission probability across the Pt/BaTiO3 interface with polarization reversal, a signature of the electroresistance effect. These results reveal exciting prospects that FTJs offer as resistive switches in nanoscale electronic devices. PMID:17501233

  4. Making sense of the electronic resource marketplace: trends in health-related electronic resources.

    Science.gov (United States)

    Blansit, B D; Connor, E

    1999-07-01

    Changes in the practice of medicine and technological developments offer librarians unprecedented opportunities to select and organize electronic resources, use the Web to deliver content throughout the organization, and improve knowledge at the point of need. The confusing array of available products, access routes, and pricing plans makes it difficult to anticipate the needs of users, identify the top resources, budget effectively, make sound collection management decisions, and organize the resources effectively and seamlessly. The electronic resource marketplace requires much vigilance, considerable patience, and continuous evaluation. There are several strategies that librarians can employ to stay ahead of the electronic resource curve, including taking advantage of free trials from publishers; marketing free trials and involving users in evaluating new products; watching and testing products marketed to the clientele; agreeing to beta test new products and services; working with aggregators or republishers; joining vendor advisory boards; benchmarking institutional resources against five to eight competitors; and forming or joining a consortium for group negotiating and purchasing. This article provides a brief snapshot of leading biomedical resources; showcases several libraries that have excelled in identifying, acquiring, and organizing electronic resources; and discusses strategies and trends of potential interest to biomedical librarians, especially those working in hospital settings. PMID:10427421

  5. A cryogen-free low temperature scanning tunneling microscope capable of inelastic electron tunneling spectroscopy.

    Science.gov (United States)

    Zhang, Shuai; Huang, Di; Wu, Shiwei

    2016-06-01

    The design and performance of a cryogen-free low temperature scanning tunneling microscope (STM) housed in ultrahigh vacuum (UHV) are reported. The cryogen-free design was done by directly integrating a Gifford-McMahon cycle cryocooler to a Besocke-type STM, and the vibration isolation was achieved by using a two-stage rubber bellow between the cryocooler and a UHV-STM interface with helium exchange gas cooling. A base temperature of 15 K at the STM was achieved, with a possibility to further decrease by using a cryocooler with higher cooling power and adding additional low temperature stage under the exchange gas interface. Atomically sharp STM images and high resolution dI/dV spectra on various samples were demonstrated. Furthermore, we reported the inelastic tunneling spectroscopy on a single carbon monoxide molecule adsorbed on Ag(110) surface with a cryogen-free STM for the first time. Being totally cryogen-free, the system not only saves the running cost significantly but also enables uninterrupted data acquisitions and variable temperature measurements with much ease. In addition, the system is capable of coupling light to the STM junction by a pair of lens inside the UHV chamber. We expect that these enhanced capabilities could further broaden our views to the atomic-scale world. PMID:27370453

  6. A cryogen-free low temperature scanning tunneling microscope capable of inelastic electron tunneling spectroscopy.

    Science.gov (United States)

    Zhang, Shuai; Huang, Di; Wu, Shiwei

    2016-06-01

    The design and performance of a cryogen-free low temperature scanning tunneling microscope (STM) housed in ultrahigh vacuum (UHV) are reported. The cryogen-free design was done by directly integrating a Gifford-McMahon cycle cryocooler to a Besocke-type STM, and the vibration isolation was achieved by using a two-stage rubber bellow between the cryocooler and a UHV-STM interface with helium exchange gas cooling. A base temperature of 15 K at the STM was achieved, with a possibility to further decrease by using a cryocooler with higher cooling power and adding additional low temperature stage under the exchange gas interface. Atomically sharp STM images and high resolution dI/dV spectra on various samples were demonstrated. Furthermore, we reported the inelastic tunneling spectroscopy on a single carbon monoxide molecule adsorbed on Ag(110) surface with a cryogen-free STM for the first time. Being totally cryogen-free, the system not only saves the running cost significantly but also enables uninterrupted data acquisitions and variable temperature measurements with much ease. In addition, the system is capable of coupling light to the STM junction by a pair of lens inside the UHV chamber. We expect that these enhanced capabilities could further broaden our views to the atomic-scale world.

  7. A cryogen-free variable temperature scanning tunneling microscope capable for inelastic electron tunneling spectroscopy

    Science.gov (United States)

    Zhang, Shuai; Huang, Di; Wu, Shiwei

    While low temperature scanning tunneling microscope (STM) has become an indispensable research tool in surface science, its versatility is yet limited by the shortage or high cost of liquid helium. The makeshifts include the use of alternative cryogen (such as liquid nitrogen) at higher temperature or the development of helium liquefier system usually at departmental or campus wide. The ultimate solution would be the direct integration of a cryogen-free cryocooler based on GM or pulse tube closed cycle in the STM itself. However, the nasty mechanical vibration at low frequency intrinsic to cryocoolers has set the biggest obstacle because of the known challenges in vibration isolation required to high performance of STM. In this talk, we will present the design and performance of our home-built cryogen-free variable temperature STM at Fudan University. This system can obtain atomically sharp STM images and high resolution dI/dV spectra comparable to state-of-the-art low temperature STMs, but with no limitation on running hours. Moreover, we demonstrated the inelastic tunneling spectroscopy (STM-IETS) on a single CO molecule with a cryogen-free STM for the first time.

  8. Luminescence from 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111) surface excited by tunneling electrons in scanning tunneling microscopy.

    Science.gov (United States)

    Ino, Daisuke; Yamada, Taro; Kawai, Maki

    2008-07-01

    The electronic excitations induced with tunneling electrons into adlayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Ag(111) have been investigated by in situ fluorescence spectroscopy in scanning tunneling microscopy (STM). A minute area of the surface is excited by an electron tunneling process in STM. Fluorescence spectra strongly depend on the coverage of PTCDA on Ag(111). The adsorption of the first PTCDA layer quenches the intrinsic surface plasmon originated from the clean Ag(111). When the second layer is formed, fluorescence spectra are dominated by the signals from PTCDA, which are interpreted as the radiative decay from the manifold of first singlet excited state (S(1)) of adsorbed PTCDA. The fluorescence of PTCDA is independent of the bias polarity. In addition, the fluorescence excitation spectrum agrees with that by optical excitation. Both results indicate that S(1) is directly excited by the inelastic impact scattering of electrons tunneling within the PTCDA adlayer. PMID:18624490

  9. Tunneling of electrons via rotor-stator molecular interfaces: combined ab initio and model study

    CERN Document Server

    Petreska, Irina; Pejov, Ljupco; Kocarev, Ljupco

    2015-01-01

    Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different shapes of tunneling barriers. Together with a rectangular barrier, we also consider a sinusoidal shape that captures the effects of the molecular internal structure more realistically. Quasiclassical approach with the Simmons' formula for current density is implemented. Special attention is paid on conformational dependence of the tunneling current. Our results confirm that the presence of the side aldehyde group enhances the interesting electronic properties of the pure anthracene molecule, making it a bistable system with geometry dependent transport properties. We also investigate the transition voltage and we show that confirmation dependent field emission could be observed in these molecular interfaces at realistically low voltages. The present study accompanies our previ...

  10. Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wang, R.; Williams, C. C., E-mail: clayton@physics.utah.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-09-15

    Dynamic tunneling force microscopy (DTFM) is a scanning probe technique for real space mapping and characterization of individual electronic trap states in non-conductive films with atomic scale spatial resolution. The method is based upon the quantum mechanical tunneling of a single electron back and forth between a metallic atomic force microscopy tip and individual trap states in completely non-conducting surface. This single electron shuttling is measured by detecting the electrostatic force induced on the probe tip at the shuttling frequency. In this paper, the physical basis for the DTFM method is unfolded through a physical model and a derivation of the dynamic tunneling signal as a function of several experimental parameters is shown. Experimental data are compared with the theoretical simulations, showing quantitative consistency and verifying the physical model used. The experimental system is described and representative imaging results are shown.

  11. Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces

    International Nuclear Information System (INIS)

    Dynamic tunneling force microscopy (DTFM) is a scanning probe technique for real space mapping and characterization of individual electronic trap states in non-conductive films with atomic scale spatial resolution. The method is based upon the quantum mechanical tunneling of a single electron back and forth between a metallic atomic force microscopy tip and individual trap states in completely non-conducting surface. This single electron shuttling is measured by detecting the electrostatic force induced on the probe tip at the shuttling frequency. In this paper, the physical basis for the DTFM method is unfolded through a physical model and a derivation of the dynamic tunneling signal as a function of several experimental parameters is shown. Experimental data are compared with the theoretical simulations, showing quantitative consistency and verifying the physical model used. The experimental system is described and representative imaging results are shown

  12. Probing the longitudinal momentum spread of the electron wave packet at the tunnel exit

    DEFF Research Database (Denmark)

    N. Pfeiffer, Adrian; Cirelli, Claudio; S. Landsman, Alexandra;

    2012-01-01

    We present an ellipticity resolved study of momentum distributions arising from strong-field ionization of Helium at constant intensity. The influence of the ion potential on the departing electron is considered within a semi-classical model consisting of an initial tunneling step and subsequent...... classical propagation. We find that the momentum distribution can be explained by the presence of a longitudinal momentum spread of the electron at the exit from the tunnel. Our combined experimental and theoretical study provides an estimate of this momentum spread....

  13. Controlling the Spin Polarization of the Electron Current in a Semimagnetic Resonant-Tunneling Diode

    OpenAIRE

    Beletskii, N. N.; Berman, G. P.; Borysenko, S. A.

    2004-01-01

    The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the coefficient of the spin polarization of the electron current has been investigated. The dependence of the spin filtering degree of the electron current on the external magnetic field and the bias voltage has been obtained. The effect of the total spin polariza...

  14. Band electron spectrum and thermodynamic properties of the pseudospin-electron model with tunneling splitting of levels

    Directory of Open Access Journals (Sweden)

    O.Ya.Farenyuk

    2006-01-01

    Full Text Available The pseudospin-electron model with tunneling splitting of levels is considered. Generalization of dynamic mean-field method for systems with correlated hopping was applied to the investigation of the model. Electron spectra, electron concentrations, average values of pseudospins and grand canonical potential were calculated within the alloy-analogy approximation. Electron spectrum and dependencies of the electron concentrations on chemical potential were obtained. It was shown that in the alloy-analogy approximation, the model possesses the first order phase transition to ferromagnetic state with the change of chemical potential and the second order phase transition with the change of temperature.

  15. Free online electronic information resources on applied science and technology

    OpenAIRE

    Ghosh, T. B.

    2003-01-01

    The paper discusses free online electronic information resources and different means of collection of the resources. The online electronic information resources on “Applied Science and Technology are compiled and linked at URL: http://www.geocities.com/ghosh_svrec and described the different free Internet resource like online electronic journals, online electronic books, online databases, organizations, virtual libraries on Applied Science and Technology and special page on earthquake inform...

  16. Electronic resource management systems a workflow approach

    CERN Document Server

    Anderson, Elsa K

    2014-01-01

    To get to the bottom of a successful approach to Electronic Resource Management (ERM), Anderson interviewed staff at 11 institutions about their ERM implementations. Among her conclusions, presented in this issue of Library Technology Reports, is that grasping the intricacies of your workflow-analyzing each step to reveal the gaps and problems-at the beginning is crucial to selecting and implementing an ERM. Whether the system will be used to fill a gap, aggregate critical data, or replace a tedious manual process, the best solution for your library depends on factors such as your current soft

  17. Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-11-03

    Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

  18. Submolecular Electronic Mapping of Single Cysteine Molecules by in Situ Scanning Tunneling Imaging

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Chi, Qijin; Nazmutdinov, R. R.;

    2009-01-01

    We have used L-Cysteine (Cys) as a model system to study the surface electronic structures of single molecules at the submolecular level in aqueous buffer solution by a combination of electrochemical scanning tunneling microscopy (in situ STM), electrochemistry including voltammetry and chronocou...

  19. Subterahertz acoustical pumping of electronic charge in a resonant tunneling device.

    Science.gov (United States)

    Young, E S K; Akimov, A V; Henini, M; Eaves, L; Kent, A J

    2012-06-01

    We demonstrate that controlled subnanosecond bursts of electronic charge can be transferred through a resonant tunneling diode by successive picosecond acoustic pulses. The effect exploits the nonlinear current-voltage characteristics of the device and its asymmetric response to the compressive and tensile components of the strain pulse. This acoustoelectronic pump opens new possibilities for the control of quantum phenomena in nanostructures. PMID:23003634

  20. Electron tunnelling phase time and dwell time through an associated delta potential barrier

    Institute of Scientific and Technical Information of China (English)

    白尔隽; 舒启清

    2005-01-01

    The electron tunnelling phase time τp and dwell time τD through an associated delta potential barrier U(x) = ξδ(x)are calculated and both are in the order of 10-17 - 10-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h2/meξ and the characteristic energy Ec = meξ2/H2 of the delta barrier, where me is the electron mass, Ic and Ec are assumed to be the effective width and height of the delta barrier with lcEc= ξ, respectively. It is found that τD reaches its maximum and τD = τP as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc = λDB, λDB is de Broglie wave length of the electron.

  1. Transient localized electron dynamics simulation during femtosecond laser tunnel ionization of diamond

    International Nuclear Information System (INIS)

    Highlights: ► A first-principles calculation of nonlinear electron–photon interactions when tunnel ionization dominates is presented. ► TDDFT is applied for the description of transient localized electrons dynamics. ► The relationships among average absorbed energy, Keldysh parameter and laser intensity are revealed. -- Abstract: A real-time and real-space time-dependent density-functional theory (TDDFT) is applied to simulate the nonlinear electron–photon interactions during femtosecond laser processing of diamond when tunnel ionization dominates. The transient localized electron dynamics including the electron excitation, energy absorption and electron density evolution are described in this Letter. In addition, the relationships among average absorbed energy, Keldysh parameter and laser intensity are revealed when the laser frequency is fixed.

  2. Nature of Asymmetry in the Vibrational Line Shape of Single-Molecule Inelastic Electron Tunneling Spectroscopy with the STM

    Science.gov (United States)

    Xu, Chen; Chiang, Chi-lun; Han, Zhumin; Ho, W.

    2016-04-01

    Single molecule vibrational spectroscopy and microscopy was demonstrated in 1998 by inelastic electron tunneling with the scanning tunneling microscope. To date, the discussion of its application has mainly focused on the spatial resolution and the spectral energy and intensity. Here we report on the vibrational line shape for a single carbon monoxide molecule that qualitatively exhibits inversion symmetry when it is transferred from the surface to the tip. The dependence of the line shape on the molecule's asymmetric couplings in the tunnel junction can be understood from theoretical simulation and further validates the mechanisms of inelastic electron tunneling.

  3. Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

    OpenAIRE

    Vdovin, E.E.; Mishchenko, A.; Greenaway, M. T.; Zhu, M. J.; Ghazaryan, D.; A. Misra; Y. Cao; Morozov, S. V.; Makarovsky, O.; Fromhold, T. M.; Patanè, A.; Slotman, G. J.; Katsnelson, M. I.; Geim, A K; Novoselov, K. S.

    2015-01-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled...

  4. ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

    Science.gov (United States)

    Dumont, J.; Hackens, B.; Faniel, S.; Mouthuy, P.-O.; Sporken, R.; Melinte, S.

    2009-09-01

    The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (√3 ×√3 )R30° reconstructions on the defect-free areas.

  5. Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

    International Nuclear Information System (INIS)

    A numerical method for electron transport calculations in resonant-tunneling GaN/AlGaN heterostructures has been developed on the basis of a self-consistent solution of the Schrödinger and Poisson equations. Dependences of the system’s transmission coefficient on the external field and of the peak current on the ratio between the well and barrier widths have been studied for a double-barrier resonant-tunneling diode. For technical applications, the optimal values of the structure’s parameters have been found.

  6. Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

    International Nuclear Information System (INIS)

    A frequency-dependent impedance analysis (0.1-50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed

  7. Probing Nanoscale Electronic and Magnetic Interaction with Scanning Tunneling Spectroscopy

    DEFF Research Database (Denmark)

    Bork, Jakob

    This thesis is concerned with fundamental research into electronic and magnetic interaction on the nanoscale. From small metallic and magnetic islands and layers to single atoms. The research revolves around magnetic interaction probed through the spectroscopic capabilities of the scanning...

  8. Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons.

    Science.gov (United States)

    Natterer, Fabian D; Zhao, Yue; Wyrick, Jonathan; Chan, Yang-Hao; Ruan, Wen-Ying; Chou, Mei-Yin; Watanabe, Kenji; Taniguchi, Takashi; Zhitenev, Nikolai B; Stroscio, Joseph A

    2015-06-19

    The observation of phonons in graphene by inelastic electron tunneling spectroscopy has been met with limited success in previous measurements arising from weak signals and other spectral features which inhibit a clear distinction between phonons and miscellaneous excitations. Utilizing a back-gated graphene device that allows adjusting the global charge carrier density, we introduce an averaging method where individual tunneling spectra at varying charge carrier density are combined into one representative spectrum. This method improves the signal for inelastic transitions while it suppresses dispersive spectral features. We thereby map the total graphene phonon density of states, in good agreement with density functional calculations. Unexpectedly, an abrupt change in the phonon intensity is observed when the graphene charge carrier type is switched through a variation of the back-gate electrode potential. This sudden variation in phonon intensity is asymmetric in the carrier type, depending on the sign of the tunneling bias.

  9. State-specific tunneling lifetimes from classical trajectories: H-atom dissociation in electronically excited pyrrole

    Science.gov (United States)

    Xie, Weiwei; Domcke, Wolfgang; Farantos, Stavros C.; Grebenshchikov, Sergy Yu.

    2016-03-01

    A trajectory method of calculating tunneling probabilities from phase integrals along straight line tunneling paths, originally suggested by Makri and Miller [J. Chem. Phys. 91, 4026 (1989)] and recently implemented by Truhlar and co-workers [Chem. Sci. 5, 2091 (2014)], is tested for one- and two-dimensional ab initio based potentials describing hydrogen dissociation in the 1B1 excited electronic state of pyrrole. The primary observables are the tunneling rates in a progression of bending vibrational states lying below the dissociation barrier and their isotope dependences. Several initial ensembles of classical trajectories have been considered, corresponding to the quasiclassical and the quantum mechanical samplings of the initial conditions. It is found that the sampling based on the fixed energy Wigner density gives the best agreement with the quantum mechanical dissociation rates.

  10. Electron Holography of Barrier Structures in Co/ZrAlOx/Co Magnetic Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhe; ZHU Tao; SHEN Feng; SHENG Wen-Ting; WANG Wei-Gang; XIAO John Q; ZHANG Ze

    2005-01-01

    @@ We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together,indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.

  11. Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

    International Nuclear Information System (INIS)

    Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

  12. Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

    Science.gov (United States)

    Wójcik, P.; Spisak, B. J.; Wołoszyn, M.; Adamowski, J.

    2012-11-01

    Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner-Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current-voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current-voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current-voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode.

  13. Electronic states in tunneling semiconductor superlattices: Technical progress report for the period September 15, 1987-September 14, 1988

    International Nuclear Information System (INIS)

    This research project funded by DOE has concentrated in the systematic study of the effects of a gate voltage on the electronic structure of a tunneling superlattice system. The effects of strong magnetic fields and other various parameters on energy levels of tunneling superlattices have been investigated

  14. Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfaces

    Science.gov (United States)

    Kaiser, W. J.; Bell, L. D.; Hecht, M. H.; Grunthaner, F. J.

    1988-01-01

    Scanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.

  15. Concerted Electronic and Nuclear Fluxes During Coherent Tunnelling in Asymmetric Double-Well Potentials.

    Science.gov (United States)

    Bredtmann, Timm; Manz, Jörn; Zhao, Jian-Ming

    2016-05-19

    The quantum theory of concerted electronic and nuclear fluxes (CENFs) during coherent periodic tunnelling from reactants (R) to products (P) and back to R in molecules with asymmetric double-well potentials is developed. The results are deduced from the solution of the time-dependent Schrödinger equation as a coherent superposition of two eigenstates; here, these are the two states of the lowest tunnelling doublet. This allows the periodic time evolutions of the resulting electronic and nuclear probability densities (EPDs and NPDs) as well as the CENFs to be expressed in terms of simple sinusodial functions. These analytical results reveal various phenomena during coherent tunnelling in asymmetric double-well potentials, e.g., all EPDs and NPDs as well as all CENFs are synchronous. Distortion of the symmetric reference to a system with an asymmetric double-well potential breaks the spatial symmetry of the EPDs and NPDs, but, surprisingly, the symmetry of the CENFs is conserved. Exemplary application to the Cope rearrangement of semibullvalene shows that tunnelling of the ideal symmetric system can be suppressed by asymmetries induced by rather small external electric fields. The amplitude for the half tunnelling, half nontunnelling border is as low as 0.218 × 10(-8) V/cm. At the same time, the delocalized eigenstates of the symmetric reference, which can be regarded as Schrödinger's cat-type states representing R and P with equal probabilities, get localized at one or the other minima of the asymmetric double-well potential, representing either R or P. PMID:26799383

  16. Quantum chaotic tunneling in graphene systems with electron-electron interactions

    Science.gov (United States)

    Ying, Lei; Wang, Guanglei; Huang, Liang; Lai, Ying-Cheng

    2014-12-01

    An outstanding and fundamental problem in contemporary physics is to include and probe the many-body effect in the study of relativistic quantum manifestations of classical chaos. We address this problem using graphene systems described by the Hubbard Hamiltonian in the setting of resonant tunneling. Such a system consists of two symmetric potential wells separated by a potential barrier, and the geometric shape of the whole domain can be chosen to generate integrable or chaotic dynamics in the classical limit. Employing a standard mean-field approach to calculating a large number of eigenenergies and eigenstates, we uncover a class of localized states with near-zero tunneling in the integrable systems. These states are not the edge states typically seen in graphene systems, and as such they are the consequence of many-body interactions. The physical origin of the non-edge-state type of localized states can be understood by the one-dimensional relativistic quantum tunneling dynamics through the solutions of the Dirac equation with appropriate boundary conditions. We demonstrate that, when the geometry of the system is modified to one with chaos, the localized states are effectively removed, implying that in realistic situations where many-body interactions are present, classical chaos is capable of facilitating greatly quantum tunneling. This result, besides its fundamental importance, can be useful for the development of nanoscale devices such as graphene-based resonant-tunneling diodes.

  17. First-Principles Simulations of Inelastic Electron Tunneling Spectroscopyof Molecular Junctions

    OpenAIRE

    Jiang, Jun; Kula, Mathias; Lu, Wei; Luo, Yi

    2005-01-01

    A generalized Green's function theory is developed to simulate the inelastic electron tunneling spectroscopy (IETS) of molecular junctions. It has been applied to a realistic molecular junction with an octanedithiolate embedded between two gold contacts in combination with the hybrid density functional theory calculations. The calculated spectra are in excellent agreement with recent experimental results. Strong temperature dependence of the experimental IETS spectra is also reproduced. It is...

  18. Spin-dependent electron transport through a magnetic resonant tunneling diode

    OpenAIRE

    Havu, P.; Tuomisto, N.; R. Väänänen; Puska, Martti J.; Nieminen, Risto M.

    2005-01-01

    Electron-transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum-mechanical Green’s function formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green’...

  19. Tunneling of electrons via rotor-stator molecular interfaces: Combined ab initio and model study

    Science.gov (United States)

    Petreska, Irina; Ohanesjan, Vladimir; Pejov, Ljupčo; Kocarev, Ljupčo

    2016-07-01

    Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different shapes of tunneling barriers. Together with a rectangular barrier, we also consider a sinusoidal shape that captures the effects of the molecular internal structure more realistically. Quasiclassical approach with the Simmons' formula for current density is implemented. Special attention is paid on conformational dependence of the tunneling current. Our results confirm that the presence of the side aldehyde group enhances the interesting electronic properties of the pure anthracene molecule, making it a bistable system with geometry dependent transport properties. We also investigate the transition voltage and we show that conformation-dependent field emission could be observed in these molecular interfaces at realistically low voltages. The present study accompanies our previous work where we investigated the coherent transport via strongly coupled delocalized orbital by application of Non-equilibrium Green's Function Formalism.

  20. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

    Science.gov (United States)

    Yahyaoui, N.; Sfina, N.; Nasrallah, S. Abdi-Ben; Lazzari, J.-L.; Said, M.

    2014-12-01

    We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained AlxGa1-xN/In0.1Ga0.9N/AlxGa1-xN quantum wells embedded in relaxed n- Al0.15Ga0.85N/strained In0.1Ga0.9N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not preclude achieving a wide band offset at the border of the pre-confinement wells. The epilayers are assumed with a cubic crystal structure to reduce spontaneous and piezoelectric polarization effects. The resonant tunneling and the thermally activated transfer through the barriers are the two mechanisms of transport taken into account in the calculations based on the Schrödinger, Poisson and kinetic equations resolved self-consistently. Using the transfer matrix formalism, we have analyzed the influence of the double barrier height on the resonant current. With an Al composition in the barriers varying between 30% and 50%, we have found that resonant tunneling dominates over the transport mediated by the thermally activated charge transfer for low applied voltages. It is also found that the designed n-type InGaN/AlGaN RTD with 30% of Al composition in the barriers is a potential candidate for achieving a resonant tunneling diode.

  1. Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    袁建辉; 张建军; 曾奇军; 张俊佩; 成泽

    2011-01-01

    Artificial graphene structures embedded in semiconductors could open novel routes for studies of electron interactions in 1ow-dimensional systems. We propose a way to manipulate the transport properties of massless Dirac fermions in an artificial graphene-based tunnel junction. Velocity-modulation control of electron wave propagation in the different regions can be regarded as velocity barriers. Transmission probability of electron is affected profoundly by this velocity barrier. We find that there is no confinement for Dirac electron as the velocity ratio ζ is less than 1, but when the velocity ratio is larger than 1 the confined state appears in the continuum band. These localized Dirac electrons may lead to the decreasing of transmission probability.

  2. Single-molecule electron tunnelling through multiple redox levels with environmental relaxation

    DEFF Research Database (Denmark)

    Kuznetsov, A.M.; Ulstrup, Jens

    2004-01-01

    represent the substrate and tip in electrochemical in situ scanning tunnelling microscopy. An equivalent three-electrode configuration represents a molecular single-electron transistor in which the enclosing electrodes constitute source and drain, and the reference electrode the gate. Current-bias voltage......We present an analytical theory for electron flow through a molecule with several redox levels, enclosed between a pair of metallic electrodes. The levels can be electronic or electronic-vibrational levels. Vibrational energy spacing characterises the latter sets. The levels are further coupled...... relations at fixed electrochemical overpotential or gate voltage, and current-overpotential or current-gate voltage relations at fixed bias voltage are equivalent in the two systems. Due to the activation-less nature of the processes, electron flow between the electrodes through the molecular redox levels...

  3. Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States

    OpenAIRE

    Mizuta, Hiroshi

    1998-01-01

    This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode S-matrix simulation is performed newly introducing the scattering potential of discrete impurities. With a few ionised donors being placed, the calculated energy-dependence of the total transmission rate shows new resonances which are donor-configuration dependent. Visualised electron probability density...

  4. Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states

    OpenAIRE

    Hiroshi Mizuta

    1998-01-01

    This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode S-matrix simulation is performed newly introducing the scattering potential of discrete impurities. With a few ionised donors being placed, the calculated energy-dependence of the total transmission rate shows new resonances which are donor-configuration dependent. Visualised electron prob...

  5. Conceptual design for an electron-beam heated hypersonic wind tunnel

    Energy Technology Data Exchange (ETDEWEB)

    Lipinski, R.J.; Kensek, R.P.

    1997-07-01

    There is a need for hypersonic wind-tunnel testing at about mach 10 and above using natural air and simulating temperatures and pressures which are prototypic of flight at 50 km altitude or below. With traditional wind-tunnel techniques, gas cooling during expansion results in exit temperatures which are too low. Miles, et al., have proposed overcoming this difficulty by heating the air with a laser beam as it expands in the wind-tunnel nozzle. This report discusses an alternative option of using a high-power electron beam to heat the air as it expands. In the e-beam heating concept, the electron beam is injected into the wind-tunnel nozzle near the exit and then is guided upstream toward the nozzle throat by a strong axial magnetic field. The beam deposits most of its power in the dense air near the throat where the expansion rate is greatest. A conceptual design is presented for a large-scale system which achieves Mach 14 for 0.1 seconds with an exit diameter of 2.8 meters. It requires 450 MW of electron beam power (5 MeV at 90 A). The guiding field is 500 G for most of the transport length and increases to 100 kG near the throat to converge the beam to a 1.0-cm diameter. The beam generator is a DC accelerator using a Marx bank (of capacitors) and a diode stack with a hot cathode. 14 refs. 38 figs., 9 tabs.

  6. Revisiting the inelastic electron tunneling spectroscopy of single hydrogen atom adsorbed on the Cu(100) surface.

    Science.gov (United States)

    Jiang, Zhuoling; Wang, Hao; Sanvito, Stefano; Hou, Shimin

    2015-12-21

    Inelastic electron tunneling spectroscopy (IETS) of a single hydrogen atom on the Cu(100) surface in a scanning tunneling microscopy (STM) configuration has been investigated by employing the non-equilibrium Green's function formalism combined with density functional theory. The electron-vibration interaction is treated at the level of lowest order expansion. Our calculations show that the single peak observed in the previous STM-IETS experiments is dominated by the perpendicular mode of the adsorbed H atom, while the parallel one only makes a negligible contribution even when the STM tip is laterally displaced from the top position of the H atom. This propensity of the IETS is deeply rooted in the symmetry of the vibrational modes and the characteristics of the conduction channel of the Cu-H-Cu tunneling junction, which is mainly composed of the 4s and 4pz atomic orbitals of the Cu apex atom and the 1s orbital of the adsorbed H atom. These findings are helpful for deepening our understanding of the propensity rules for IETS and promoting IETS as a more popular spectroscopic tool for molecular devices.

  7. Revisiting the inelastic electron tunneling spectroscopy of single hydrogen atom adsorbed on the Cu(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Zhuoling; Wang, Hao [Centre for Nanoscale Science and Technology, Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China); Sanvito, Stefano [School of Physics, AMBER and CRANN Institute, Trinity College, Dublin 2 (Ireland); Hou, Shimin, E-mail: smhou@pku.edu.cn [Centre for Nanoscale Science and Technology, Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China); Beida Information Research (BIR), Tianjin 300457 (China)

    2015-12-21

    Inelastic electron tunneling spectroscopy (IETS) of a single hydrogen atom on the Cu(100) surface in a scanning tunneling microscopy (STM) configuration has been investigated by employing the non-equilibrium Green’s function formalism combined with density functional theory. The electron-vibration interaction is treated at the level of lowest order expansion. Our calculations show that the single peak observed in the previous STM-IETS experiments is dominated by the perpendicular mode of the adsorbed H atom, while the parallel one only makes a negligible contribution even when the STM tip is laterally displaced from the top position of the H atom. This propensity of the IETS is deeply rooted in the symmetry of the vibrational modes and the characteristics of the conduction channel of the Cu-H-Cu tunneling junction, which is mainly composed of the 4s and 4p{sub z} atomic orbitals of the Cu apex atom and the 1s orbital of the adsorbed H atom. These findings are helpful for deepening our understanding of the propensity rules for IETS and promoting IETS as a more popular spectroscopic tool for molecular devices.

  8. Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.

    Science.gov (United States)

    Vdovin, E E; Mishchenko, A; Greenaway, M T; Zhu, M J; Ghazaryan, D; Misra, A; Cao, Y; Morozov, S V; Makarovsky, O; Fromhold, T M; Patanè, A; Slotman, G J; Katsnelson, M I; Geim, A K; Novoselov, K S; Eaves, L

    2016-05-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states. PMID:27203338

  9. Mapping the first electronic resonances of a Cu phthalocyanine STM tunnel junction

    International Nuclear Information System (INIS)

    Using a low temperature, ultrahigh vacuum scanning tunneling microscope (STM), dI/dV differential conductance maps were recorded at the tunneling resonance energies for a single Cu phthalocyanine molecule adsorbed on an Au(111) surface. We demonstrated that, contrary to the common assumption, such maps are not representative of the molecular orbital spatial expansion, but rather result from their complex superposition captured by the STM tip apex with a superposition weight which generally does not correspond to the native weight used in the standard Slater determinant basis set. Changes in the molecule conformation on the Au(111) surface further obscure the identification between dI/dV conductance maps and the native molecular orbital electronic probability distribution in space.

  10. Nonlocal and Quantum Tunneling Contributions to Harmonic Generation in Nanostructures: Electron Cloud Screening Effects

    CERN Document Server

    Scalora, Michael; de Ceglia, Domenico; Haus, Joseph W

    2014-01-01

    Our theoretical examination of second and third harmonic generation from metal-based nanostructures predicts that nonlocal and quantum tunneling phenomena can significantly exceed expectations based solely on local, classical electromagnetism. Mindful that the diameter of typical transition metal atoms is approximately 3{\\AA}, we adopt a theoretical model that treats nanometer-size features and/or sub-nanometer size gaps or spacers by taking into account: (i) the limits imposed by atomic size to fulfill the requirements of continuum electrodynamics; (ii) spillage of the nearly-free electron cloud into the surrounding vacuum; and (iii) the increased probability of quantum tunneling as objects are placed in close proximity. Our approach also includes the treatment of bound charges, which add crucial, dynamical components to the dielectric constant that are neglected in the conventional hydrodynamic model, especially in the visible and UV ranges, where interband transitions are important. The model attempts to i...

  11. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Qiushi; Zhang, Chao; Zhang, Yang, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn; Zhang, Yao; Liao, Yuan; Dong, Zhenchao, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within several molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.

  12. Electron-vibrational effects in the tunnel current through polycentric systems

    Science.gov (United States)

    Borshch, S. A.; Chibotaru, L. F.; Rousseau-Violet, J.

    1998-04-01

    The conductivity of polynuclear cluster situated between two metallic electrodes is studied within the semiclassical approximation. The conductivity depends on the shape of adiabatic potential surface of `cluster + excess electron' mixed-valence system which is entirely governed by the relationship between the intramolecular electron transfer and the vibronic coupling. The specific cases of dimer and trimer molecules are illustrated through conductivity and current calculations. It is shown that localization→delocalization transitions in mixed-valence clusters are accompanied by more or less abrupt changes in the molecular conductivity. However, the behavior of molecular conductivity and tunnel current is determined not only by the type of electronic distribution but also by the density of accessible electron-vibrational states.

  13. Note: Electron energy spectroscopy mapping of surface with scanning tunneling microscope

    Science.gov (United States)

    Li, Meng; Xu, Chunkai; Zhang, Panke; Li, Zhean; Chen, Xiangjun

    2016-08-01

    We report a novel scanning probe electron energy spectrometer (SPEES) which combines a double toroidal analyzer with a scanning tunneling microscope to achieve both topography imaging and electron energy spectroscopy mapping of surface in situ. The spatial resolution of spectroscopy mapping is determined to be better than 0.7 ± 0.2 μm at a tip sample distance of 7 μm. Meanwhile, the size of the field emission electron beam spot on the surface is also measured, and is about 3.6 ± 0.8 μm in diameter. This unambiguously demonstrates that the spatial resolution of SPEES technique can be much better than the size of the incident electron beam.

  14. Using Electronic Resources to Support Problem-Based Learning

    Science.gov (United States)

    Chang, Chen-Chi; Jong, Ay; Huang, Fu-Chang

    2012-01-01

    Students acquire skills in problem solving and critical thinking through the process as well as team work on problem-based learning courses. Many courses have started to involve the online learning environment and integrate these courses with electronic resources. Teachers use electronic resources in their classes. To overcome the problem of the…

  15. What Faculty Think: A Survey on Electronic Resources

    Science.gov (United States)

    Jackson, Millie

    2008-01-01

    In the fall of 2007, ebrary surveyed 906 faculty from around the world, asking them how they used electronic resources. This article, focusing on the responses of faculty to a few survey questions, finds some expected and surprising attitudes that faculty have about electronic resources for their own and students' research. (Contains 2 notes.)

  16. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  17. High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

    Science.gov (United States)

    Jia, Chuancheng; Ma, Wei; Gu, Chunhui; Chen, Hongliang; Yu, Haomiao; Li, Xinxi; Zhang, Fan; Gu, Lin; Xia, Andong; Hou, Xiaoyuan; Meng, Sheng; Guo, Xuefeng

    2016-06-01

    A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.

  18. Atomic-scale mapping of electronic structures across heterointerfaces by cross-sectional scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Interfacial science has received much attention recently based on the development of state-of-the-art analytical tools that can create and manipulate the charge, spin, orbital, and lattice degrees of freedom at interfaces. Motivated by the importance of nanoscale interfacial science that governs device operation, we present a technique to probe the electronic characteristics of heterointerfaces with atomic resolution. In this work, the interfacial characteristics of heteroepitaxial structures are investigated and the fundamental mechanisms that pertain in these systems are elucidated through cross-sectional scanning tunneling microscopy (XSTM). The XSTM technique is employed here to directly observe epitaxial interfacial structures and probe local electronic properties with atomic-level capability. Scanning tunneling microscopy and spectroscopy experiments with atomic precision provide insight into the origin and spatial distribution of electronic properties across heterointerfaces. The first part of this report provides a brief description of the cleavage technique and spectroscopy analysis in XSTM measurements. The second part addresses interfacial electronic structures of several model heterostructures in current condensed matter research using XSTM. Topics to be discussed include high-κ‘s/III–V’s semiconductors, polymer heterojunctions, and complex oxide heterostructures, which are all material systems whose investigation using this technique is expected to benefit the research community. Finally, practical aspects and perspectives of using XSTM in interface science are presented. (topical review)

  19. High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

    Science.gov (United States)

    Jia, Chuancheng; Ma, Wei; Gu, Chunhui; Chen, Hongliang; Yu, Haomiao; Li, Xinxi; Zhang, Fan; Gu, Lin; Xia, Andong; Hou, Xiaoyuan; Meng, Sheng; Guo, Xuefeng

    2016-06-01

    A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials. PMID:27183191

  20. Use of electronic information resources in goverment libraries

    OpenAIRE

    Simona Omahen; Maja Žumer

    2003-01-01

    The article presents the use of electronic information resources in government libraries in Slovenia. It starts with the definition of government libraries and electronic publications. On a selected sample of government libraries, the state of the usage of electronic information resources in government libraries was studied. On the basis of interviews, carried out in five government libraries, it was established that government libraries mostly do not focus on, or even think about, the use of...

  1. Mapping the intramolecular contributions to the inelastic electron tunneling signal of a molecular junction

    Science.gov (United States)

    Foti, Giuseppe; Vázquez, Héctor

    2016-07-01

    We present a quantitative analysis of the intramolecular origin of the inelastic electron tunneling signal of a molecular junction. We use density-functional theory to study a representative conjugated molecule with a low degree of symmetry and calculate, for all modes, the different contributions that give rise to the vibrational spectrum. These local contributions involve products of scattering states with electron-phonon matrix elements and thus encode information on both the vibrational modes and the electronic structure. We separate these intra- and interatomic terms and draw a pattern of addition or cancellation of these partial contributions throughout the inelastic spectrum. This allows for a quantitative relation between the degree of symmetry of each vibrational mode, its inelastic signal, and the locality of selection rules.

  2. Electron tunneling through single self-assembled InAs quantum dots coupled to nanogap electrodes

    International Nuclear Information System (INIS)

    We have investigated electronic properties of self-assembled InAs quantum dots (QDs) grown on GaAs surfaces by using metallic Au and Al leads with narrow gaps. The fabricated junctions with Au nanogap electrodes show single electron tunneling behaviors. When coupling between electrons in the QDs and the electrodes is strong, Kondo effect with relatively high Kondo temperature TK of 10-15 K is observed. The samples with superconducting (SC) Al electrodes also exhibit clear Coulomb blockade effects. Furthermore, clear suppression in conductance is observed around VSD=0 V for a voltage range of 4Δ/e at T=40 mK, where Δ is the SC energy gap of Al, demonstrating successful fabrication of the SC-QD-SC junction in the self-assembled InAs QD system. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Scanning tunneling spectroscopy on ZnO(0001) surfaces : evidence for an inhomogeneous electronic structure

    Science.gov (United States)

    Hackens, B.; Rodrigues, M. S.; Faniel, S.; Mouthuy, P. O.; Melinte, S.; Dumont, J.; Sporken, R.

    2010-03-01

    We performed low temperature (77 K) scanning tunneling microscopy (STM) and spectroscopy (STS) on the polar Zn-terminated ZnO(0001) surface [1]. STM and STS data show that the surface electronic structure strongly depends on the local morphology : we observe a narrow bandgap and surface states in the flat regions, and, in the defective surface regions, a wide bandgap without surface states. We also image atomically-resolved (√3 x√3)R30^o reconstructions in small defect-free areas.[4pt] [1] J. Dumont et al., Appl. Phys. Lett. 95, 132102 (2009).

  4. Time and Space Resolved High Harmonic Imaging of Electron Tunnelling from Molecules

    Science.gov (United States)

    Smirnova, O.

    2009-05-01

    High harmonic generation in intense laser fields carries the promise of combining sub-Angstrom spatial and attosecond temporal resolution of electronic structures and dynamics in molecules, see e.g. [1-3]. High harmonic emission occurs when an electron detached from a molecule by an intense laser field recombines with the parent ion [4]. Similar to Young's double-slit experiment, recombination to several ``lobes'' of the same molecular orbital can produce interference minima and maxima in harmonic intensities [1]. These minima (maxima) carry structural information -- they occur when the de-Broglie wavelength of the recombining electron matches distances between the centers. We demonstrate both theoretically and experimentally that amplitude minima (maxima) in the harmonic spectra can also have dynamical origin, reflecting multi-electron dynamics in the molecule. We use high harmonic spectra to record this dynamics and reconstruct the position of the hole left in the molecule after ionization. Experimental data are consistent with the hole starting in different places as the ionization dynamics changes from tunnelling to the multi-photon regime. Importantly, hole localization and subsequent attosecond dynamics are induced even in the tunnelling limit. Thus, even ``static'' tunnelling induced by a tip of a tunnelling microscope will generate similar attosecond dynamics in a sample. We anticipate that our approach will become standard in disentangling spatial and temporal information from high harmonic spectra of molecules.[4pt] In collaboration with Serguei Patchkovskii, National Research Council, 100 Sussex Drive, Ottawa, Ontario K1A 0R6, Canada; Yann Mairesse, NRC Canada and CELIA, Universit'e Bordeaux I, UMR 5107 (CNRS, Bordeaux 1, CEA), 351 Cours de la Lib'eration, 33405 Talence Cedex, France; Nirit Dudovich, NRC Canada and Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel; David Villeneuve, Paul Corkum, NRC Canada

  5. Transverse electron momentum distribution in tunneling and over the barrier ionization by laser pulses with varying ellipticity

    OpenAIRE

    Ivanov, I. A.; A. S. Kheifets; Calvert, J. E.; Goodall, S.; Wang, X.; Han Xu; Palmer, A. J.; Kielpinski, D.; Litvinyuk, I.V.; Sang, R. T.

    2016-01-01

    We study transverse electron momentum distribution in strong field atomic ionization driven by laser pulses with varying ellipticity. We show, both experimentally and theoretically, that the transverse electron momentum distribution in the tunneling and over the barrier ionization regimes evolves in a qualitatively different way when the ellipticity parameter describing polarization state of the driving laser pulse increases.

  6. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bhardwaj, Shubhendu [Electrical and Computer Engineering Department, The Ohio State University, Columbus, OH 43212 (United States); Sensale-Rodriguez, Berardi [Electrical and Computer Engineering Department, The University of Utah, Salt Lake City, UT 84112 (United States); Xing, Huili Grace [School of Electrical and Computer Engineering and Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853 (United States); Department of Electrical Engineering, University of Notre Dame, IN 46556 (United States); Rajan, Siddharth [Electrical and Computer Engineering Department and Materials Science Engineering Department, The Ohio State University, Columbus, OH 43212 (United States); Volakis, John L.

    2016-01-07

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.

  7. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  8. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    International Nuclear Information System (INIS)

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

  9. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons.

    Science.gov (United States)

    Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai; Meixner, Alfred J

    2015-01-01

    Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

  10. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    Science.gov (United States)

    Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

    2016-01-01

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.

  11. Single electron tunnelling through high-Q single-wall carbon nanotube NEMS resonators

    Science.gov (United States)

    Hüttel, A. K.; Meerwaldt, H. B.; Steele, G. A.; Poot, M.; Witkamp, B.; Kouwenhoven, L. P.; van der Zant, H. S. J.

    2010-12-01

    By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided. Combining this with pre-defined trenches on the chip, such that the nanotubes are freely suspended above the substrate, enables the formation of highly regular electronic systems. We show that, in addition, such suspended ultra-clean nanotubes provide excellent high-frequency and low-dissipation mechanical resonators. The motion detection mechanism of our experiment is discussed, and we measure the effect of Coulomb blockade and the back-action of single electron tunneling on the mechanical motion. In addition data on the mechanical higher modes is presented.

  12. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    International Nuclear Information System (INIS)

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. [copyright] 2001 American Institute of Physics

  13. Single-molecule electronics: Cooling individual vibrational modes by the tunneling current

    Science.gov (United States)

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C.

    2016-03-01

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions.

  14. Single-molecule electronics: Cooling individual vibrational modes by the tunneling current.

    Science.gov (United States)

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

    2016-03-21

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions. PMID:27004879

  15. Why and How to Measure the Use of Electronic Resources

    OpenAIRE

    Jean Bernon

    2008-01-01

    A complete overview of library activity implies a complete and reliable measurement of the use of both electronic resources and printed materials. This measurement is based on three sets of definitions: document types, use types and user types. There is a common model of definitions for printed materials, but a lot of questions and technical issues remain for electronic resources. In 2006 a French national working group studied these questions. It relied on the COUNTER standard, but found it ...

  16. A high-frequency response and a nonlinear coherent generation in resonant-tunneling diodes within a broad frequency range with electron-electron interaction

    International Nuclear Information System (INIS)

    Within the framework of a sequential quantum mechanical model, the response and the power of a coherent generation have been obtained numerically in a resonant-tunneling diode in a wide range of frequencies with the electron-electron interaction. The quantum regime of generation is shown to be sustained under the electron-electron interaction. Thus, a high-power generation is probable under frequencies exceeding the width of the resonant level

  17. Incorporation of electron tunnelling phenomenon into 3D Monte Carlo simulation of electrical percolation in graphite nanoplatelet composites

    International Nuclear Information System (INIS)

    The percolation threshold problem in insulating polymers filled with exfoliated conductive graphite nanoplatelets (GNPs) is re-examined in this 3D Monte Carlo simulation study. GNPs are modelled as solid discs wrapped by electrically conductive layers of certain thickness which represent half of the electron tunnelling distance. Two scenarios of 'impenetrable' and 'penetrable' GNPs are implemented in the simulations. The percolation thresholds for both scenarios are plotted versus the electron tunnelling distance for various GNP thicknesses. The assumption of successful dispersion and exfoliation, and the incorporation of the electron tunnelling phenomenon in the impenetrable simulations suggest that the simulated percolation thresholds are lower bounds for any experimental study. Finally, the simulation results are discussed and compared with other experimental studies.

  18. Two-photon-induced hot-electron transfer to a single molecule in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photoexcited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule on the surface, converting it from the neutral to the anion. The electron-transfer rate depends quadratically on the incident laser power, suggesting a two-photon excitation process. This nonlinear optical process is further confirmed by the polarization measurement. Spatial dependence of the electron-transfer rate exhibits atomic-scale variations. A two-pulse correlation experiment reveals the ultrafast dynamic nature of photoinduced charging process in the STM junction. Results from these experiments are important for understanding photoinduced interfacial charge transfer in many nanoscale inorganic-organic structures.

  19. The role of thermal excitation in the tunneling-electron-induced reaction: Dissociation of dimethyl disulfide on Cu(111)

    Science.gov (United States)

    Motobayashi, Kenta; Kim, Yousoo; Ohara, Michiaki; Ueba, Hiromu; Kawai, Maki

    2016-01-01

    We found a thermally assisted increase in anharmonic coupling between the reaction coordinate and Csbnd H(D) stretch mode for the dissociation of a single dimethyl disulfide molecule on Cu(111) induced by inelastic tunneling electrons from a tip of scanning tunneling microscope (STM). The reaction order, i.e. the number of electrons required for a reaction, changes from two to one at elevated temperature while the Csbnd H(D) stretch mode is excited by tunneling electrons. The detailed reaction mechanism is studied through the quantitative analysis of the non-integer reaction order observed at intermediate temperature, where low energy vibrational mode originated from the hybridized state of molecule and substrate plays a key role.

  20. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Xiang; HUANG Jian; ZHANG Xian-Gao; DING Hong-Lin; YU Lin-Wei; HUANG Xin-Fan; LI Wei; XU Jun; CHEN Kun-Ji

    2008-01-01

    @@ The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm,respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures.Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C- V) hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample.

  1. Integrating Electronic Resources into the Library Catalog: A Collaborative Approach.

    Science.gov (United States)

    Herrera, Gail; Aldana, Lynda

    2001-01-01

    Describes a project at the University of Mississippi Libraries to catalog purchased electronic resources so that access to these resources is available only via the Web-based library catalog. Discusses collaboration between cataloging and systems personnel; and describes the MARC catalog record field that contains the information needed to locate…

  2. Euler European Libraries and Electronic Resources in Mathematical Sciences

    CERN Document Server

    The Euler Project. Karlsruhe

    The European Libraries and Electronic Resources (EULER) Project in Mathematical Sciences provides the EulerService site for searching out "mathematical resources such as books, pre-prints, web-pages, abstracts, proceedings, serials, technical reports preprints) and NetLab (for Internet resources), this outstanding engine is capable of simple, full, and refined searches. It also offers a browse option, which responds to entries in the author, keyword, and title fields. Further information about the Project is provided at the EULER homepage.

  3. Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, A.; Avasthi, D.K.; Singh, Benoy K.; Lotha, S.; Singh, J.P.; Fink, D.; Yadav, B.K.; Bhattacharya, B.; Bose, S.K

    1999-05-02

    We report on resonant electron tunneling through a Cu-Se heterostructure junction grown electrochemically in the submicron size pores (0.8 {mu}m) of a nuclear track filter (Polycarbonate). The prominent feature of negative differential resistance (NDR) has been observed in the current-voltage (I-V) characteristic of the so-fabricated array of resonant tunneling diodes (RTDs) even at room temperature, along with a significant peak to valley current ratio (2.5) of the resonance. Tunneling structures of the nanofabricated RTDs around zero bias are also observed at room temperature. Our results show that the low cost and relatively easy electrodeposition method can be a very effective way to prepare resonant quantum tunneling devices, using the pores of nuclear track filters.

  4. Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

    International Nuclear Information System (INIS)

    We report on resonant electron tunneling through a Cu-Se heterostructure junction grown electrochemically in the submicron size pores (0.8 μm) of a nuclear track filter (Polycarbonate). The prominent feature of negative differential resistance (NDR) has been observed in the current-voltage (I-V) characteristic of the so-fabricated array of resonant tunneling diodes (RTDs) even at room temperature, along with a significant peak to valley current ratio (2.5) of the resonance. Tunneling structures of the nanofabricated RTDs around zero bias are also observed at room temperature. Our results show that the low cost and relatively easy electrodeposition method can be a very effective way to prepare resonant quantum tunneling devices, using the pores of nuclear track filters

  5. Building an electronic resource collection a practical guide

    CERN Document Server

    Lee, Stuart D

    2004-01-01

    This practical book guides information professionals step-by-step through building and managing an electronic resource collection. It outlines the range of electronic products currently available in abstracting and indexing, bibliographic, and other services and then describes how to effectively select, evaluate and purchase them.

  6. Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs

    Science.gov (United States)

    Menka; Bulusu, Anand; Dasgupta, S.

    2015-01-01

    A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor (Si-DG TFET) is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed (as in the case of the DG MOSFET); instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential (eQFP) decreases as the channel potential starts to decrease, and there are hiphops in the channel eQFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I-V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models.

  7. Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates

    Institute of Scientific and Technical Information of China (English)

    HUANG Ying-Long; MA Long; YANG Fu-Hua; WANG Liang-Chen; ZENG Yi-Ping

    2006-01-01

    @@ AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temper ature, the peak-valley current ratio and the peak voltage are about 4.8 and 0.44 V, respectively. The HEMT is characterized by a gate length of 1 μm, a maximum transconductance of 125mS/mm, and a threshold voltage of-1.0 V. The current-voltage characteristics of the series-connected RTDs are presented. The current-voltage curves of the parallel connection of one RTD and one HEMT are also presented.

  8. Study of Scanning Tunneling Microscope control electronics. Estudio del Sistema de Control y Estabilidad en el microscopico de efecto tunel

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, A.J.; Pancarobo, M.; Denisenko, N.; Aguilar, M.; Rejon, V.; Pea, J.L. (Instituto de Ciencia de Materiales, CSIC, Universidad Autonoma de Madrid, Madrid (Spain))

    1994-01-01

    A theoretical study of Scanning Tunneling Microscope control electronics is made. The knowledge of its behaviour allows us to determine accurately the region where the unstable operation could effect the measurements, and also to set the optimal working parameters. Each feedback circuitry compound is discussed as well as their mutual interaction. Different working conditions analysis and results are presented. (Author) 12 refs.

  9. Electron heating by photon-assisted tunneling in niobium terahertz mixers with integrated niobium titanium nitride striplines

    NARCIS (Netherlands)

    Leone, B; Gao, [No Value; Klapwijk, TM; Jackson, BD; Laauwen, WM; de Lange, G

    2001-01-01

    We describe the gap voltage depression and current-voltage (I-V) characteristics in pumped niobium superconductor-insulator-superconductor junction with niobium titanium nitride tuning stripline by introducing an electron heating power contribution resulting from the photon-assisted tunneling proces

  10. Understanding the inelastic electron-tunneling spectra of alkanedithiols on gold.

    Science.gov (United States)

    Solomon, Gemma C; Gagliardi, Alessio; Pecchia, Alessandro; Frauenheim, Thomas; Di Carlo, Aldo; Reimers, Jeffrey R; Hush, Noel S

    2006-03-01

    We present results for a simulated inelastic electron-tunneling spectra (IETS) from calculations using the "gDFTB" code. The geometric and electronic structure is obtained from calculations using a local-basis density-functional scheme, and a nonequilibrium Green's function formalism is employed to deal with the transport aspects of the problem. The calculated spectrum of octanedithiol on gold(111) shows good agreement with experimental results and suggests further details in the assignment of such spectra. We show that some low-energy peaks, unassigned in the experimental spectrum, occur in a region where a number of molecular modes are predicted to be active, suggesting that these modes are the cause of the peaks rather than a matrix signal, as previously postulated. The simulations also reveal the qualitative nature of the processes dominating IETS. It is highly sensitive only to the vibrational motions that occur in the regions of the molecule where there is electron density in the low-voltage conduction channel. This result is illustrated with an examination of the predicted variation of IETS with binding site and alkane chain length.

  11. Understanding the inelastic electron-tunneling spectra of alkanedithiols on gold.

    Science.gov (United States)

    Solomon, Gemma C; Gagliardi, Alessio; Pecchia, Alessandro; Frauenheim, Thomas; Di Carlo, Aldo; Reimers, Jeffrey R; Hush, Noel S

    2006-03-01

    We present results for a simulated inelastic electron-tunneling spectra (IETS) from calculations using the "gDFTB" code. The geometric and electronic structure is obtained from calculations using a local-basis density-functional scheme, and a nonequilibrium Green's function formalism is employed to deal with the transport aspects of the problem. The calculated spectrum of octanedithiol on gold(111) shows good agreement with experimental results and suggests further details in the assignment of such spectra. We show that some low-energy peaks, unassigned in the experimental spectrum, occur in a region where a number of molecular modes are predicted to be active, suggesting that these modes are the cause of the peaks rather than a matrix signal, as previously postulated. The simulations also reveal the qualitative nature of the processes dominating IETS. It is highly sensitive only to the vibrational motions that occur in the regions of the molecule where there is electron density in the low-voltage conduction channel. This result is illustrated with an examination of the predicted variation of IETS with binding site and alkane chain length. PMID:16526869

  12. Photo-catalytic Activities of Plant Hormones on Semiconductor Nanoparticles by Laser-Activated Electron Tunneling and Emitting

    Science.gov (United States)

    Tang, Xuemei; Huang, Lulu; Zhang, Wenyang; Jiang, Ruowei; Zhong, Hongying

    2015-03-01

    Understanding of the dynamic process of laser-induced ultrafast electron tunneling is still very limited. It has been thought that the photo-catalytic reaction of adsorbents on the surface is either dependent on the number of resultant electron-hole pairs where excess energy is lost to the lattice through coupling with phonon modes, or dependent on irradiation photon wavelength. We used UV (355 nm) laser pulses to excite electrons from the valence band to the conduction band of titanium dioxide (TiO2), zinc oxide (ZnO) and bismuth cobalt zinc oxide (Bi2O3)0.07(CoO)0.03(ZnO)0.9 semiconductor nanoparticles with different photo catalytic properties. Photoelectrons are extracted, accelerated in a static electric field and eventually captured by charge deficient atoms of adsorbed organic molecules. A time-of-flight mass spectrometer was used to detect negative molecules and fragment ions generated by un-paired electron directed bond cleavages. We show that the probability of electron tunneling is determined by the strength of the static electric field and intrinsic electron mobility of semiconductors. Photo-catalytic dissociation or polymerization reactions of adsorbents are highly dependent on the kinetic energy of tunneling electrons as well as the strength of laser influx. By using this approach, photo-activities of phytohormones have been investigated.

  13. Photo-catalytic activities of plant hormones on semiconductor nanoparticles by laser-activated electron tunneling and emitting.

    Science.gov (United States)

    Tang, Xuemei; Huang, Lulu; Zhang, Wenyang; Jiang, Ruowei; Zhong, Hongying

    2015-01-01

    Understanding of the dynamic process of laser-induced ultrafast electron tunneling is still very limited. It has been thought that the photo-catalytic reaction of adsorbents on the surface is either dependent on the number of resultant electron-hole pairs where excess energy is lost to the lattice through coupling with phonon modes, or dependent on irradiation photon wavelength. We used UV (355 nm) laser pulses to excite electrons from the valence band to the conduction band of titanium dioxide (TiO₂), zinc oxide (ZnO) and bismuth cobalt zinc oxide (Bi₂O₃)₀.₀₇(CoO)₀.₀₃(ZnO)₀.₉ semiconductor nanoparticles with different photo catalytic properties. Photoelectrons are extracted, accelerated in a static electric field and eventually captured by charge deficient atoms of adsorbed organic molecules. A time-of-flight mass spectrometer was used to detect negative molecules and fragment ions generated by un-paired electron directed bond cleavages. We show that the probability of electron tunneling is determined by the strength of the static electric field and intrinsic electron mobility of semiconductors. Photo-catalytic dissociation or polymerization reactions of adsorbents are highly dependent on the kinetic energy of tunneling electrons as well as the strength of laser influx. By using this approach, photo-activities of phytohormones have been investigated.

  14. Why and How to Measure the Use of Electronic Resources

    Directory of Open Access Journals (Sweden)

    Jean Bernon

    2008-11-01

    Full Text Available A complete overview of library activity implies a complete and reliable measurement of the use of both electronic resources and printed materials. This measurement is based on three sets of definitions: document types, use types and user types. There is a common model of definitions for printed materials, but a lot of questions and technical issues remain for electronic resources. In 2006 a French national working group studied these questions. It relied on the COUNTER standard, but found it insufficient and pointed out the need for local tools such as web markers and deep analysis of proxy logs. Within the French national consortium COUPERIN, a new working group is testing ERMS, SUSHI standards, Shibboleth authentication, along with COUNTER standards, to improve the counting of the electronic resources use. At this stage this counting is insufficient and its improvement will be a European challenge for the future.

  15. Access to electronic resources by visually impaired people

    Directory of Open Access Journals (Sweden)

    Jenny Craven

    2003-01-01

    Full Text Available Research into access to electronic resources by visually impaired people undertaken by the Centre for Research in Library and Information Management has not only explored the accessibility of websites and levels of awareness in providing websites that adhere to design for all principles, but has sought to enhance understanding of information seeking behaviour of blind and visually impaired people when using digital resources.

  16. Electronic Resources Security: A look at Unauthorized Users

    OpenAIRE

    Heather Tones White

    2010-01-01

    Much of the literature written on electronic resources security focuses on systematic downloading.  However, when the unauthorized use from two cases of stolen identities at the University of Saskatchewan was studied in more depth, a different pattern emerged.  By analyzing proxy server data, we found that the unauthorized use was coming from all over the world, was focused on science, technology and medical resources, and included both small-scale and excessive downloading.  This article out...

  17. The Study of Analytical Model of Library Electronic Resources Usage-A Case of Medical Electronic Resources

    Directory of Open Access Journals (Sweden)

    Chung-Yen Yu

    2014-10-01

    Full Text Available With the advents of internet, the importance of electronic resources is growing. Due to the increasing expensiveness of electronic resources, university libraries normally received budgets from parent institutions annually. They necessarily applied effective and systematic methods for decision making in electronic resources purchase or re-subscription. However, there are some difficulties in practices: First of all, libraries are unable to receive user records; second, the COUNTER statistics does not include details about users and their affiliation. As a result, one cannot conduct advanced user analysis based on the usage of users, institutions, and departments. To overcome the difficulties, this study presents a feasible model to analyze electronic resource usage effectively and flexibly. We set up a proxy server to collect actual usage raw data. By analyzing items in internet browsing records, associated with original library automatic system, this study aims at exploring how to use effective ways to analyze big data of website log data. We also propose the process of how original data to be transformed, cleared, integrated, and demonstrated. This study adopted a medical university library and its subscription of medical electronic resources as a case. Our data analysis includes (1 year of subscription,(2 title of journal, (3 affiliation, (4 subjects, and (5 specific journal requirements, etc. The findings of the study are contributed to obtain further understanding in policy making and user behavior analysis. The integrated data provides multiple applications in informatics research, information behavior, bibliomining, presenting diverse views and extended issues for further discussion.

  18. Practical guide to electronic resources in the humanities

    CERN Document Server

    Dubnjakovic, Ana

    2010-01-01

    From full-text article databases to digitized collections of primary source materials, newly emerging electronic resources have radically impacted how research in the humanities is conducted and discovered. This book, covering high-quality, up-to-date electronic resources for the humanities, is an easy-to-use annotated guide for the librarian, student, and scholar alike. It covers online databases, indexes, archives, and many other critical tools in key humanities disciplines including philosophy, religion, languages and literature, and performing and visual arts. Succinct overviews of key eme

  19. The dependence of the tunneling characteristic on the electronic energy bands and the carrier’s states of Graphene superlattice

    Science.gov (United States)

    Yang, C. H.; Shen, G. Z.; Ao, Z. M.; Xu, Y. W.

    2016-09-01

    Using the transfer matrix method, the carrier tunneling properties in graphene superlattice generated by the Thue-Morse sequence and Kolakoski sequence are investigated. The positions and strength of the transmission can be modulated by the barrier structures, the incident energy and angle, the height and width of the potential. These carriers tunneling characteristic can be understood from the energy band structures in the corresponding superlattice systems and the carrier’s states in well/barriers. The transmission peaks above the critical incident angle rely on the carrier’s resonance in the well regions. The structural diversity can modulate the electronic and transport properties, thus expanding its applications.

  20. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Science.gov (United States)

    Warburton, W. K.; Harris, J. T.; Friedrich, S.

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100-2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays - currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I-V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  1. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  2. Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides

    Science.gov (United States)

    Vexler, M. I.

    2015-09-01

    It is demonstrated theoretically that replacing silicon dioxide in a metal-insulator-semiconductor (MIS) structure with a double-layer insulator HfO2(ZrO2)/SiO2 must lead to a decrease in the relative contribution of electrons with comparatively low energies to the total tunneling current. As a consequence, a suppression of the current component associated with the charge transport into the valence band of Si or from it is predicted for many regimes, especially of the low-energy part of this component. This effect can improve the efficiency of injection devices, such as a transistor with a tunnel MIS emitter or a resonant-tunneling diode based on a heavily doped MIS structure.

  3. What Is the Future of Electronic Resource Management Systems?

    Science.gov (United States)

    Tijerina, Bonnie; King, Douglas

    2008-01-01

    In a time of constant change, sometimes it is worthwhile to ruminate on the future and how things ought to be. "Journal of Electronic Resources Librarianship" wanted to capture some of these ruminations from around the field in a new column called "E-Opinions from the Field" where readers are asked to send in their thoughts on a topic and respond…

  4. A Pioneering Spirit: Using Administrative Metadata to Manage Electronic Resources

    OpenAIRE

    Medeiros, Norm

    2003-01-01

    This article describes administrative metadata, and its use in managing electronic resources. The focus of the article is an interview with Tim Jewell, Head of Collection Management Services at the University of Washington and Adam Chandler, Information Technology Librarian at Cornell University.

  5. Providing Access to Electronic Information Resources in Further Education

    Science.gov (United States)

    Banwell, Linda; Ray, Kathryn; Coulson, Graham; Urquhart, Christine; Lonsdale, Ray; Armstrong, Chris; Thomas, Rhian; Spink, Sin; Yeoman, Alison; Fenton, Roger; Rowley, Jennifer

    2004-01-01

    This article aims to provide a baseline for future studies on the provision and support for the use of digital or electronic information services (EIS) in further education. The analysis presented is based on a multi-level model of access, which encompasses access to and availability of information and communication technology (ICT) resources,…

  6. Technical Communicator: A New Model for the Electronic Resources Librarian?

    Science.gov (United States)

    Hulseberg, Anna

    2016-01-01

    This article explores whether technical communicator is a useful model for electronic resources (ER) librarians. The fields of ER librarianship and technical communication (TC) originated and continue to develop in relation to evolving technologies. A review of the literature reveals four common themes for ER librarianship and TC. While the…

  7. Electronic Commerce Resource Centers. An Industry--University Partnership.

    Science.gov (United States)

    Gulledge, Thomas R.; Sommer, Rainer; Tarimcilar, M. Murat

    1999-01-01

    Electronic Commerce Resource Centers focus on transferring emerging technologies to small businesses through university/industry partnerships. Successful implementation hinges on a strategic operating plan, creation of measurable value for customers, investment in customer-targeted training, and measurement of performance outputs. (SK)

  8. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

    Directory of Open Access Journals (Sweden)

    Jun He

    2012-03-01

    Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.

  9. Integrated Electron-tunneling Refrigerator and TES Bolometer for Millimeter Wave Astronomy

    Science.gov (United States)

    Silverberg, R. F.; Benford, D. J.; Chen, T. C.; Chervenak, J.; Finkbeiner, F.; Moseley, S. H.; Duncan, W.; Miller, N.; Schmidt, D.; Ullom, J.

    2005-01-01

    We describe progress in the development of a close-packed array of bolometers intended for use in photometric applications at millimeter wavelengths from ground- based telescopes. Each bolometer in the may uses a proximity-effect Transition Edge Sensor (TES) sensing element and each will have integrated Normal-Insulator-Superconductor (NIS) refrigerators to cool the bolometer below the ambient bath temperature. The NIS refrigerators and acoustic-phonon-mode-isolated bolometers are fabricated on silicon. The radiation-absorbing element is mechanically suspended by four legs, whose dimensions are used to control and optimize the thermal conductance of the bolometer. Using the technology developed at NIST, we fabricate NIS refrigerators at the base of each of the suspension legs. The NIS refrigerators remove hot electrons by quantum-mechanical tunneling and are expected to cool the biased (approx.10 pW) bolometers to bolometers are inside a pumped 3He-cooled cryostat operating at approx.280 mK. This significantly lower temperature at the bolometer allows the detectors to approach background-limited performance despite the simple cryogenic system.

  10. Electronic Resources Security: A look at Unauthorized Users

    Directory of Open Access Journals (Sweden)

    Heather Tones White

    2010-12-01

    Full Text Available Much of the literature written on electronic resources security focuses on systematic downloading.  However, when the unauthorized use from two cases of stolen identities at the University of Saskatchewan was studied in more depth, a different pattern emerged.  By analyzing proxy server data, we found that the unauthorized use was coming from all over the world, was focused on science, technology and medical resources, and included both small-scale and excessive downloading.  This article outlines some steps that libraries can take to detect and prevent small-scale unauthorized use and implications as libraries move towards Shibboleth authentication.

  11. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    International Nuclear Information System (INIS)

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

  12. Electronic “Edge” State on Molybdenite Basal Plane Observed by Ultrahigh-Vacuum Scanning Tunneling Microscopy and Spectroscopy

    Science.gov (United States)

    Komiyama, Masaharu; Tomita, Hiroyuki; Yoda, Eisuke

    2007-09-01

    An electronic state heretofore unreported has been found on a cleaved basal plane of a natural molybdenite (MoS2) single crystal by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM), and examined in detail both by STM and scanning tunneling spectroscopy (STS). The new electronic state resides on the edge of the upper terrace of MoS2(0001), manifesting itself in the form of bright ridges with a width of ca. 4 nm along the step edges in negatively sample-biased STM images. This ridge structure is nonexistent in STM images taken with positive sample biases. STS showed that the local density of states (LDOS) on such ridge structures is much higher than that on the terraces in the range of 0.2-1.2 eV below the Fermi edge. The nature and origin of this high LDOS at the step edges are discussed.

  13. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    Science.gov (United States)

    Chowdhury, Subhra; Chattaraj, Swarnabha; Biswas, Dhrubes

    2015-04-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.

  14. 2-dimensional hyperbolic medium for electrons and photons based on the array of tunnel-coupled graphene nanoribbons

    CERN Document Server

    Iorsh, Ivan

    2015-01-01

    We study the electronic band structure and optical conductivity of an array of tunnel-coupled array of graphene nanoribbons. We show that due to the coupling of electronic edge states for the zigzag nanoribbon structure, the Fermi surface can become a hyperbola similarly to the case of the layered metal-dielectric structures, where the hyperbolic isofrequency contours originate from the coupling of localized surface plasmon polaritons. Moreover, we show that for both types of the ribbon edge, the optical response of the structure can be characterized by a uniaxial conductivity tensor, having principal components of the different signs. Therefore, the tunnel-coupled nanoribbon array can be regarded as a tunable hyperbolic metasurface.

  15. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  16. Combining scanning tunneling microscopy and synchrotron radiation for high-resolution imaging and spectroscopy with chemical, electronic, and magnetic contrast

    International Nuclear Information System (INIS)

    The combination of high-brilliance synchrotron radiation with scanning tunneling microscopy opens the path to high-resolution imaging with chemical, electronic, and magnetic contrast. Here, the design and experimental results of an in-situ synchrotron enhanced x-ray scanning tunneling microscope (SXSTM) system are presented. The system is designed to allow monochromatic synchrotron radiation to enter the chamber, illuminating the sample with x-ray radiation, while an insulator-coated tip (metallic tip apex open for tunneling, electron collection) is scanned over the surface. A unique feature of the SXSTM is the STM mount assembly, designed with a two free-flex pivot, providing an angular degree of freedom for the alignment of the tip and sample with respect to the incoming x-ray beam. The system designed successfully demonstrates the ability to resolve atomic-scale corrugations. In addition, experiments with synchrotron x-ray radiation validate the SXSTM system as an accurate analysis technique for the study of local magnetic and chemical properties on sample surfaces. The SXSTM system's capabilities have the potential to broaden and deepen the general understanding of surface phenomena by adding elemental contrast to the high-resolution of STM. -- Highlights: ► Synchrotron enhanced x-ray scanning tunneling microscope (SXSTM) system designed. ► Unique STM mount design allows angular DOF for tip alignment with x-ray beam. ► System demonstrates ability to resolve atomic corrugations on HOPG. ► Studies show chemical sensitivity with STM tip from photocurrent and tunneling. ► Results show system's ability to study local magnetic (XMCD) properties on Fe films.

  17. Quasi-stationary states of electrons interacting with strong electromagnetic field in two-barrier resonance tunnel nano-structure

    OpenAIRE

    M.V. Tkach; Ju.O. Seti; O.M. Voitsekhivska

    2012-01-01

    An exact solution of non-stationary Schrodinger equation is obtained for a one-dimensional movement of electrons in an electromagnetic field with arbitrary intensity and frequency. Using it, the permeability coefficient is calculated for a two-barrier resonance tunnel nano-structure placed into a high-frequency electromagnetic field. It is shown that a nano-structure contains quasi-stationary states the spectrum of which consists of the main and satellite energies. The properties of resonance...

  18. Vibration-induced Kondo tunneling through metal-organic complexes with even electron occupation number.

    Science.gov (United States)

    Kikoin, K; Kiselev, M N; Wegewijs, M R

    2006-05-01

    We investigate transport through a mononuclear transition-metal complex with strong tunnel coupling to two electrodes. The ground state of this molecule is a singlet, while the first excited state is a triplet. We show that a modulation of the tunnel-barrier due to a molecular distortion which couples to the tunneling induces a Kondo-effect, provided the discrete vibrational energy compensates the singlet-triplet gap. We discuss the single-phonon and two-phonon-assisted cotunneling and possible experimental realization of the theory.

  19. Electron tunneling through barriers of adjustable width: Role of the image potential and the wetting behavior of Cs by He

    Science.gov (United States)

    Zech, M.; Bromberger, H.; Klier, J.; Leiderer, P.; Wyatt, A. F. G.

    2008-09-01

    Photocurrents from cesium, flowing through gaseous H3e or H4e and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T=1.33K . At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of H3e grows on the Cs and forms a tunnel barrier; but for H4e , the film is too thin to form a tunnel barrier below liquid-vapor coexistence. This is because H4e does not wet Cs at this temperature and the finite thickness needed to form a tunnel barrier is larger than the thickness of the thin-film state. H3e enables a continuously variable tunnel barrier thickness to be studied. We show that the image potential is important and confirm that an electron in liquid H3e has a potential energy of 1.0 eV. We find that the thickness d of a helium film is given by ΔC3/d3=-kBTln(p/p0) for films thicker than approximately three monolayers.

  20. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

    Science.gov (United States)

    Galbiati, Marta; Tatay, Sergio; Delprat, Sophie; Khanh, Hung Le; Servet, Bernard; Deranlot, Cyrile; Collin, Sophie; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2015-02-01

    Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al2O3 or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al2O3/Alq3/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working "organic" and short-circuited junctions fabricated on the same wafer.

  1. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Galbiati, Marta; Tatay, Sergio; Delprat, Sophie; Khanh, Hung Le; Deranlot, Cyrile; Collin, Sophie; Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com; Mattana, Richard, E-mail: richard.mattana@thalesgroup.com; Petroff, Frédéric [Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Servet, Bernard [Thales Research and Technology, 1 Av. A. Fresnel, 91767 Palaiseau (France)

    2015-02-23

    Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffuse through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.

  2. Electronic Signatures of all Four DNA Nucleosides in a Tunneling Gap

    Science.gov (United States)

    Chang, Shuai

    2011-03-01

    New approaches to DNA sequencing are required to reduce costs and increase the availability of personalized genomics. Using Scanning Tunneling Microscope as a tool, we report measurements of the current signals generated as free nucleosides diffuse into a tunnel junction in which both electrodes are functionalized with a reagent that presents a hydrogen bond donor and acceptor to the nucleosides. This functionalization serves to both limit the range of molecular orientations in the tunnel gap and reduce the contact resistance, increasing the selectivity of the tunneling signal, so that a direct readout may be possible with a few repeated reads. This work was supported by a grant from the Sequencing Technology Program of the National Human Genome Research Institute (HG004378).

  3. First-order correction terms in the weak-field asymptotic theory of tunneling ionization in many-electron systems

    Science.gov (United States)

    Trinh, Vinh H.; Tolstikhin, Oleg I.; Morishita, Toru

    2016-10-01

    The many-electron weak-field asymptotic theory of tunneling ionization including the first-order correction terms in the asymptotic expansion of the ionization rate in field strength was highlighted in our recent fast track communication (Trinh et al 2015 J. Phys. B: At. Mol. Opt. Phys. 48 061003) by demonstrating its performance for two-electron atoms. Here we present a thorough derivation of the first-order terms omitted in the previous publication and provide additional numerical illustrations of the theory.

  4. Correlations between the final momenta of electrons and their initial phase-space distribution in the process of tunnel ionization

    CERN Document Server

    Ayadi, Viktor; Dombi, Peter; Tokesi, Karoly

    2016-01-01

    We present both full quantum mechanical and semiclassical calculations of above threshold ionization (ATI) of a hydrogen atom in the tunneling regime by a few-cycle linearly polarized infrared laser pulse. As a quantum treatment, we applied the direct integration of the time dependent Schr\\"odinger equation (TDSE). In the semiclassical approximation (SCA), it is assumed that wavepacket propagation in the post-tunneling process can be well described within the classical framework. With these two methods, we analyze the similarities and deviations for ionization of the hydrogen atom. We found that the 3 dimensional semiclassical method can describe reasonably well the momentum correlation pattern of the ATI peaks. We also show good agreement between the results obtained by TDSE method and the semi-classical method. Furthermore, with the semiclassical approximation we clearly identify and separate the regions in momentum distributions of the ejected electrons according to initial conditions. We illustrate the co...

  5. Resonant tunneling of electrons between two-dimensional systems of different densities in a quantizing magnetic field

    International Nuclear Information System (INIS)

    The results of experimental investigation of the vertical electron transport in a GaAs/Al0.3Ga0.7As/GaAs single-barrier tunneling heterostructure with a doped barrier are presented. Two-dimensional accumulation layers appear on different sides of the barrier as a result of the ionization of Si donors in the barrier layer. The nonmonotonic shift of the current peak is found in the I-V curve of the tunneling diode in a magnetic field perpendicular to the planes of two-dimensional layers. Such a behavior is shown to be successfully explained in the model of appearing the Coulomb pseudogap and the pinning of the spin-split Landau levels at the Fermi levels of the contacts. In this explanation, it is necessary to assume that the Lande factor is independent of the filling factors of the Landau levels and is g* = 7.5 for both layers

  6. Analysis of Human Resources Management Strategy in China Electronic Commerce Enterprises

    Science.gov (United States)

    Shao, Fang

    The paper discussed electronic-commerce's influence on enterprise human resources management, proposed and proved the human resources management strategy which electronic commerce enterprise should adopt from recruitment strategy to training strategy, keeping talent strategy and other ways.

  7. Effects of Electronic Information Resources Skills Training for Lecturers on Pedagogical Practices and Research Productivity

    Science.gov (United States)

    Bhukuvhani, Crispen; Chiparausha, Blessing; Zuvalinyenga, Dorcas

    2012-01-01

    Lecturers use various electronic resources at different frequencies. The university library's information literacy skills workshops and seminars are the main sources of knowledge of accessing electronic resources. The use of electronic resources can be said to have positively affected lecturers' pedagogical practices and their work in general. The…

  8. Electronic Resources and Mission Creep: Reorganizing the Library for the Twenty-First Century

    Science.gov (United States)

    Stachokas, George

    2009-01-01

    The position of electronic resources librarian was created to serve as a specialist in the negotiation of license agreements for electronic resources, but mission creep has added more functions to the routine work of electronic resources such as cataloging, gathering information for collection development, and technical support. As electronic…

  9. Revealing energy level structure of individual quantum dots by tunneling rate measured by single-electron sensitive electrostatic force spectroscopy.

    Science.gov (United States)

    Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter

    2015-04-01

    We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels. PMID:25761141

  10. Electronic properties of conductive pili of the metal-reducing bacterium Geobacter sulfurreducens probed by scanning tunneling microscopy

    Science.gov (United States)

    Veazey, Joshua P.; Reguera, Gemma; Tessmer, Stuart H.

    2011-12-01

    The metal-reducing bacterium Geobacter sulfurreducens produces conductive protein appendages known as “pilus nanowires” to transfer electrons to metal oxides and to other cells. These processes can be harnessed for the bioremediation of toxic metals and the generation of electricity in bioelectrochemical cells. Key to these applications is a detailed understanding of how these nanostructures conduct electrons. However, to the best of our knowledge, their mechanism of electron transport is not known. We used the capability of scanning tunneling microscopy (STM) to probe conductive materials with higher spatial resolution than other scanning probe methods to gain insights into the transversal electronic behavior of native, cell-anchored pili. Despite the presence of insulating cellular components, the STM topography resolved electronic molecular substructures with periodicities similar to those reported for the pilus shaft. STM spectroscopy revealed electronic states near the Fermi level, consistent with a conducting material, but did not reveal electronic states expected for cytochromes. Furthermore, the transversal conductance was asymmetric, as previously reported for assemblies of helical peptides. Our results thus indicate that the Geobacter pilus shaft has an intrinsic electronic structure that could play a role in charge transport.

  11. Stimulated emission of surface plasmons by electron tunneling in metal-barrier-metal structures

    Science.gov (United States)

    Siu, D. P.; Gustafson, T. K.

    1978-01-01

    It is shown that correlation currents arising from the superposition of pairs of states on distinct sides of a potential barrier in metal-barrier-metal structures can result in inelastic tunneling through the emission of surface plasmons. Net gain of an externally excited plasmon field is possible.

  12. Magnetic transitions induced by tunneling electrons in individual adsorbed M-phthalocyanine molecules (M=Fe and Co)

    OpenAIRE

    Gauyacq, J. P.; Novaes, Frederico D; Lorente, N.

    2010-01-01

    We report on a theoretical study of magnetic transitions induced by tunnelling electrons in individual adsorbed M-Phthalocyanine (M-Pc) molecules where M is a metal atom: Fe-Pc on a Cu(110)(2$\\times$1)-O surface and Co-Pc layers on Pb(111) islands. The magnetic transitions correspond to the change of orientation of the spin angular momentum of the metal ion with respect to the surroundings and possibly an applied magnetic field. The adsorbed Fe-Pc system is studied with a Density Functional T...

  13. Electronic Document Management: A Human Resource Management Case Study

    Directory of Open Access Journals (Sweden)

    Thomas Groenewald

    2004-11-01

    Full Text Available This case study serve as exemplar regarding what can go wrong with the implementation of an electronic document management system. Knowledge agility and knowledge as capital, is outlined against the backdrop of the information society and knowledge economy. The importance of electronic document management and control is sketched thereafter. The literature review is concluded with the impact of human resource management on knowledge agility, which includes references to the learning organisation and complexity theory. The intervention methodology, comprising three phases, follows next. The results of the three phases are presented thereafter. Partial success has been achieved with improving the human efficacy of electronic document management, however the client opted to discontinue the system in use. Opsomming Die gevalle studie dien as voorbeeld van wat kan verkeerd loop met die implementering van ’n elektroniese dokumentbestuur sisteem. Teen die agtergrond van die inligtingsgemeenskap en kennishuishouding word kennissoepelheid en kennis as kapitaal bespreek. Die literatuurstudie word afgesluit met die inpak van menslikehulpbronbestuur op kennissoepelheid, wat ook die verwysings na die leerorganisasie en kompleksietydsteorie insluit. Die metodologie van die intervensie, wat uit drie fases bestaan, volg daarna. Die resultate van die drie fases word vervolgens aangebied. Slegs gedeelte welslae is behaal met die verbetering van die menslike doeltreffendheid ten opsigte van elektroniese dokumentbestuur. Die klient besluit egter om nie voort te gaan om die huidige sisteem te gebruik nie.

  14. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

    Directory of Open Access Journals (Sweden)

    Ma Jing-Min

    2011-01-01

    Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

  15. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

    Science.gov (United States)

    Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

    2011-01-01

    Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers: PMID:21711779

  16. Strongly confined tunnel-coupled one-dimensional electron systems from an asymmetric double quantum well

    Science.gov (United States)

    Buchholz, S. S.; Fischer, S. F.; Kunze, U.; Schuh, D.; Abstreiter, G.

    2008-03-01

    Vertically stacked quantum point contacts (QPCs) are prepared by atomic force microscope (AFM) lithography from an asymmetric GaAs/AlGaAs double quantum well (DQW) heterostructure. Top- and back-gate voltages are used to tune the tunnel-coupled QPCs, and back-gate bias cooling is employed to investigate coupled and decoupled one-dimensional (1D) modes. Parity dependent mode coupling is invoked by the particular asymmetry in the vertical DQW confinement.

  17. Nuclear and electronic resonance spectroscopy of single molecules by radio-frequency scanning tunnelling microscopy

    OpenAIRE

    Müllegger, Stefan; Tebi, Stefano; Das, Amal K.; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

    2014-01-01

    The ongoing miniaturization in nanoscience and -technology challenges the sensitivity and selectivity of experimental analysis methods to the ultimate level of single atoms and molecules. A promising new approach, addressed here, focuses on the combination of two well-established complementary techniques that have proven to be very successful in their own fields: (i) low-temperature scanning tunneling microscopy (STM), offering high spatial resolution for imaging and spectroscopy together wit...

  18. Rotation of a single acetylene molecule on Cu(001) by tunneling electrons in STM

    OpenAIRE

    Shchadilova, Yulia E.; Tikhodeev, Sergei G.; Paulsson, Magnus; Ueba, Hiromu

    2013-01-01

    We study the elementary processes behind one of the pioneering works on STM controlled reactions of single molecules [Stipe et al., Phys. Rev. Lett. 81, 1263 (1998)]. Using the Keldysh-Green function approach for the vibrational generation rate in combination with DFT calculations to obtain realistic parameters we reproduce the experimental rotation rate of an acetylene molecule on a Cu(100) surface as a function of bias voltage and tunneling current. This combined approach allows us to ident...

  19. An array of cold-electron bolometers with SIN tunnel junctions and JFET readout for cosmology instruments

    International Nuclear Information System (INIS)

    A novel concept of the parallel/series array of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) Tunnel Junctions has been proposed. The concept was developed specially for matching the CEB with JFET amplifier at conditions of high optical power load. The CEB is a planar antenna-coupled superconducting detector with high sensitivity. For combination of effective HF operation and low noise properties the current-biased CEBs are connected in series for DC and in parallel for HF signal. A signal is concentrated from an antenna to the absorber through the capacitance of the tunnel junctions and through additional capacitance for coupling of superconducting islands. Using array of CEBs the applications can be considerably extended to higher power load by distributing the power between N CEBs and decreasing the electron temperature. Due to increased responsivity the noise matching is so effective that photon NEP could be easily achieved at 300 mK with a room temperature JFET for wide range of optical power loads. The concept of the CEB array has been developed for the BOOMERanG balloon telescope and other Cosmology instruments

  20. Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources

    International Nuclear Information System (INIS)

    Two-particle scattering probabilities in tunneling scenarios with exchange interaction are analyzed with quasi-particle wave packets. Two initial one-particle wave packets (with opposite central momentums) are spatially localized at each side of a barrier. After impinging upon a tunneling barrier, each wave packet splits into transmitted and reflected components. When the initial two-particle anti-symmetrical state is defined as a Slater determinant of any type of (normalizable) one-particle wave packet, it is shown that the probability of detecting two (identically injected) electrons at the same side of the barrier is different from zero in very common (single or double barrier) scenarios. In some particular scenarios, the transmitted and reflected components become orthogonal and the mentioned probabilities reproduce those values associated to distinguishable particles. These unexpected non-zero probabilities are still present when non-separable Coulomb interaction or non-symmetrical potentials are considered. On the other hand, for initial wave packets close to Hamiltonian eigenstates, the usual zero two-particle probability for electrons at the same side of the barrier found in the literature is recovered. The generalization to many-particle scattering probabilities with quasi-particle wave packets for low and high phase-space density are also analyzed. The far-reaching consequences of these non-zero probabilities in the accurate evaluation of quantum noise in mesoscopic systems are briefly indicated. (paper)

  1. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared with the molecu......Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... with the molecular and solvent reorganisation Gibbs energy, E-r. However, a large V-bias is frequently needed for stable imaging. This applies particularly to in situ STM of redox metalloproteins, emerging as a new approach to imaging of biological processes directly in aqueous medium. We provide first an extension...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

  2. Reduced master equation analysis of multiple-tunnel junction single-electron memory device

    Science.gov (United States)

    Jalil, M. B. A.; Wagner, M.

    2000-07-01

    We employ a master equation (ME) approach in the charge transport analysis across a uniform multiple-tunnel junction (MTJ) memory trap, using a much-reduced state list derived from circuit symmetry, and previous assumptions by Jensen and Martinis. This enables all significant single tunneling and higher-order cotunneling sequences to be accounted for, while avoiding the computational cost of the full ME method. The reduced ME method is conceptually simpler and yields greater accuracy, compared with previous approximations based on tunneling probabilities. For an MTJ trap with zero stray capacitance C0, the results obtained are found to agree very closely with the full ME results up to a temperature of T≈3T0/10, where T0=e2/kBC, whereas previous methods break down at T≈T0/10. Furthermore, unlike the earlier methods, the reduced ME approach can be applied to the realistic but less symmetric case of a trap with finite C0, and remains valid up to the trap's maximum operating temperature of T≈T0/100. Finally, our reduced ME results are in close agreement with available experimental data at T

  3. Resources

    Science.gov (United States)

    ... palate - resources Colon cancer - resources Cystic fibrosis - resources Depression - resources Diabetes - resources Digestive disease - resources Drug abuse - resources Eating disorders - resources Elder care - resources Epilepsy - resources Family troubles - ...

  4. Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors

    International Nuclear Information System (INIS)

    The authors present a systematic study of an introduced reset operation on quantum dot (QD) single photon detectors operating at 77 K. The detectors are based on an AlAs/GaAs/AlAs double-barrier resonant tunneling diode with an adjacent layer of self-assembled InAs QDs. Sensitive single-photon detection in high (dI)/(dV) region with suppressed current fluctuations is achieved. The dynamic detection range is extended up to at least 104 photons/s for sensitive imaging applications by keeping the device far from saturation by employing an appropriate reset frequency

  5. Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Q. C.; Zhu, Z. Q. [Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China); An, Z. H., E-mail: anzhenghua@fudan.edu.cn [State Key Laboratory of Surface Physics and Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Song, J. D.; Choi, W. J. [Center for Opto-Electronic Convergence Systems, Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)

    2014-02-03

    The authors present a systematic study of an introduced reset operation on quantum dot (QD) single photon detectors operating at 77 K. The detectors are based on an AlAs/GaAs/AlAs double-barrier resonant tunneling diode with an adjacent layer of self-assembled InAs QDs. Sensitive single-photon detection in high (dI)/(dV) region with suppressed current fluctuations is achieved. The dynamic detection range is extended up to at least 10{sup 4} photons/s for sensitive imaging applications by keeping the device far from saturation by employing an appropriate reset frequency.

  6. Proton tunneling in solids

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, J.

    1998-10-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  7. Strong overtones modes in inelastic electron tunneling spectroscopy with cross-conjugated molecules: a prediction from theory.

    Science.gov (United States)

    Lykkebo, Jacob; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

    2013-10-22

    Cross-conjugated molecules are known to exhibit destructive quantum interference, a property that has recently received considerable attention in single-molecule electronics. Destructive quantum interference can be understood as an antiresonance in the elastic transmission near the Fermi energy and leading to suppressed levels of elastic current. In most theoretical studies, only the elastic contributions to the current are taken into account. In this paper, we study the inelastic contributions to the current in cross-conjugated molecules and find that while the inelastic contribution to the current is larger than for molecules without interference, the overall behavior of the molecule is still dominated by the quantum interference feature. Second, an ongoing challenge for single molecule electronics is understanding and controlling the local geometry at the molecule-surface interface. With this in mind, we investigate a spectroscopic method capable of providing insight into these junctions for cross-conjugated molecules: inelastic electron tunneling spectroscopy (IETS). IETS has the advantage that the molecule interface is probed directly by the tunneling current. Previously, it has been thought that overtones are not observable in IETS. Here, overtones are predicted to be strong and, in some cases, the dominant spectroscopic features. We study the origin of the overtones and find that the interference features in these molecules are the key ingredient. The interference feature is a property of the transmission channels of the π system only, and consequently, in the vicinity of the interference feature, the transmission channels of the σ system and the π system become equally transmissive. This allows for scattering between the different transmission channels, which serves as a pathway to bypass the interference feature. A simple model calculation is able to reproduce the results obtained from atomistic calculations, and we use this to interpret these findings

  8. Electron tunneling through molecule-electrode contacts of single alkane molecular junctions: experimental determination and a practical barrier model.

    Science.gov (United States)

    Wang, Kun; Xu, Bingqian

    2016-04-14

    An advanced understanding of the molecule-electrode contact interfaces of single-molecule junctions is a necessity for real world application of future single-molecule devices. This study aims to elucidate the change in the contact tunnelling barrier induced by junction extension and how this change affects the resulting junction conductance. The contact barrier of Au-octanedithiol/octanediamine-Au junctions was studied under triangle (TRI) mechanical modulations using the modified scanning tunneling microscopy (STM) break junction technique. The experimental results reveal that as the junction separation extends, the contact barrier of octanedithiol follows a unique trend, a linear increase followed by a plateau in barrier height, which is in contrast to that of octanediamine, a nearly rectangle barrier. We propose a modified contact barrier model for the unique barrier shape of octanedithiol, based on which the calculation agrees well with the experimental data. This study shows unprecedented experimental features of the molecule-electrode contact barrier of single-molecule junctions and provides new insights into the nature of contact effect in determining electron transport through single-molecule junctions. PMID:26988278

  9. Cost-benefit analysis of electronic information resources: an evaluation on Middle East Technical University Library.

    OpenAIRE

    BATI, Hacer

    2006-01-01

    In recent years there has been a rapid transition from print to electronic resources. Significant amount of library budgets are allocated for licensing electronic resources. Identifying and analyzing the benefits and costs of this new trend is therefore important for academic libraries. In this presentation experiences of METU (Middle East Technical University) Library on licensing and usage of electronic resources is evaluated by providing a cost-benefit analysis based on the cost and usage ...

  10. Combined action of the bound-electron nonlinearity and the tunnel-ionization current in low-order harmonic generation in noble gases

    CERN Document Server

    Sapaev, U; Herrmann, J

    2013-01-01

    We study numerically low-order harmonic generation in noble gases pumped by intense femtosecond laser pulses in the tunneling ionization regime. We analyze the influence of the phase-mismatching on this process, caused by the generated plasma, and study in dependence on the pump intensity the origin of harmonic generation arising either from the bound-electron nonlinearity or the tunnel-ionization current. It is shown that in argon the optimum pump intensity of about 100 TW/cm$^2$ leads to the maximum efficiency, where the main contribution to low-order harmonics originates from the bound-electron third and fifth order susceptibilities, while for intensities higher than 300 TW/cm$^2$ the tunnel-ionization current plays the dominant role. Besides, we predict that VUV pulses at 133 nm can be generated with relatively high efficiency of about $1.5\\times10^{-3}$ by 400 nm pump pulses.

  11. Electronic Safety Resource Tools -- Supporting Hydrogen and Fuel Cell Commercialization

    Energy Technology Data Exchange (ETDEWEB)

    Barilo, Nick F.

    2014-09-29

    The Pacific Northwest National Laboratory (PNNL) Hydrogen Safety Program conducted a planning session in Los Angeles, CA on April 1, 2014 to consider what electronic safety tools would benefit the next phase of hydrogen and fuel cell commercialization. A diverse, 20-person team led by an experienced facilitator considered the question as it applied to the eight most relevant user groups. The results and subsequent evaluation activities revealed several possible resource tools that could greatly benefit users. The tool identified as having the greatest potential for impact is a hydrogen safety portal, which can be the central location for integrating and disseminating safety information (including most of the tools identified in this report). Such a tool can provide credible and reliable information from a trustworthy source. Other impactful tools identified include a codes and standards wizard to guide users through a series of questions relating to application and specific features of the requirements; a scenario-based virtual reality training for first responders; peer networking tools to bring users from focused groups together to discuss and collaborate on hydrogen safety issues; and a focused tool for training inspectors. Table ES.1 provides results of the planning session, including proposed new tools and changes to existing tools.

  12. Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode.

    Science.gov (United States)

    Ahn, Hyun S; Bard, Allen J

    2015-11-01

    Single-nanoparticle collisions were observed on an n-type silicon electrode (600 μm diameter) passivated by a thin layer of amorphous TiO2, where the current steps occurred by tunneling electron transfer. The observed collision frequency was in reasonable agreement with that predicted from theory. The isolated electrode, after a collision experiment, with a Pt/TiO2/n-Si architecture was shown to retain the photoelectrochemical properties of n-Si without photocorrosion or current decay. The Pt/TiO2/n-Si electrode produced 19 mA cm(-2) of photocurrent density under 100 mW cm(-2) irradiation from a xenon lamp during oxygen evolution without current fading for over 12 h. PMID:26377039

  13. A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

    Institute of Scientific and Technical Information of China (English)

    Ma Long; Huang Ying-Long; Zhang Yang; Yang Fu-Hua; Wang Liang-Chen

    2006-01-01

    This paper reports that the structures of A1GaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An A10.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

  14. Tunneling and migration of the dumbbell defect in electron-irradiated aluminum-zinc alloys

    International Nuclear Information System (INIS)

    Ultrasonic attenuation and velocity measurements on irradiated Al-Zn alloys (0.01, 0.1, and 0.5 at %) indicate a tunneling relaxation of the predominant mixed dumbbell defect at low temperatures, and mixed dumbbell migration at the Stage II anneal temperature. The effect of an internal strain varying with the zinc concentration on the measured decrement and modulus change is striking. Evaluated in the framework of a six-level system, this reveals the simultaneous action of resonance and nonclassical relaxation processes. Using Fe as a probe atom, it is shown that mixed dumbbell dissociation is in an insignificant component of the annealing of this defect. The decrease of the annealing temperature at higher zinc concentrations provides evidence that the mixed dumbbell migrates as a unit during annealing. The energies associated with dumbbell migration and interstitial escape are derived. Further evidence for the migration mechanism is obtained from successive irradiation and annealing

  15. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    International Nuclear Information System (INIS)

    Resonant tunneling diodes have been fabricated using graded Si1-xGex (x=0.3->0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. [copyright] 2001 American Institute of Physics

  16. An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes

    International Nuclear Information System (INIS)

    We present an entropic quantum drift-diffusion model (eQDD) and show how it can be derived on a bounded domain as the diffusive approximation of the Quantum Liouville equation with a quantum BGK operator. Some links between this model and other existing models are exhibited, especially with the density gradient (DG) model and the Schroedinger-Poisson drift-diffusion model (SPDD). Then a finite difference scheme is proposed to discretize the eQDD model coupled to the Poisson equation and we show how this scheme can be slightly modified to discretize the other models. Numerical results show that the properties listed for the eQDD model are checked, as well as the model captures important features concerning the modeling of a resonant tunneling diode. To finish, some comparisons between the models stated above are realized

  17. Superconducting Tunnel Junction Refrigerators for Sub-Kelvin Cooling of Electrons, Phonons, and Arbitrary, User-Supplied Payloads

    Science.gov (United States)

    Lowell, Peter Joseph

    Modern science often requires measurements at sub-Kelvin temperatures. Temperatures of 300 mK can be reached by using liquid 3He, but reaching lower temperatures requires the use of adiabatic demagnetization and dilution refrigerators which are complex, large, and costly. Normal-metalInsulatorSuperconductor (NIS) tunnel junctions provide an alternative refrigeration method that is simple to use, compact, and provides continuous cooling power that has the potential to expand the accessibility of these sub-Kelvin temperatures. When properly biased, the electron system in the normal metal of an NIS junction is cooled since the hottest electrons preferentially tunnel from the normal metal to the superconductor, transferring heat in the process. When the normal metal is extended onto a thermally isolated membrane, the cold electrons cool the phonons in the membrane through electron-phonon coupling. In previous work, NIS junctions have been used to cool detectors and bulk objects that were integrated with the membrane, but could not be considered a general-purpose refrigerator since they could not cool arbitrary objects. The goal of this work has been to demonstrate a general-purpose NIS refrigerator to which a user can attach arbitrary bulk objects. First, we discuss NIS refrigeration and then develop a model to predict phonon cooling. We fabricated and tested NIS refrigerators capable of cooling bulk objects and used the model to explain the results. The devices were able to cool phonons from 300 mK to 154 mK with 100 pW of cooling power at 200 mK. With these devices, we were able to cool a 2 cm3 piece of copper from 290 mK to 256 mK with 700 pW of cooling power at 290 mK. This demonstration marks the emergence of NIS refrigerators as a true, general-purpose refrigerator since users can attach arbitrary objects. Measurements of Andreev reflections in the devices and next-generation refrigerators that cool electrons from 100 mK to below 50 mK are also presented.

  18. Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.; Rouvimov, Sergei; Snider, Gregory L. [Electrical Engineering Department, University of Notre Dame, Indiana 46556 (United States)

    2016-01-15

    The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.

  19. Electronic Resource Management 2.0: Using Web 2.0 Technologies as Cost-Effective Alternatives to an Electronic Resource Management System

    Science.gov (United States)

    Murray, Adam

    2008-01-01

    Designed to assist with the management of e-resources, electronic resource management (ERM) systems are time- and fund-consuming to purchase and maintain. Questions of system compatibility, data population, and workflow design/redesign can be difficult to answer; sometimes those answers are not what we'd prefer to hear. The two primary functions…

  20. Single-molecule Electronics: Cooling Individual Vibrational Modes by the Tunneling Current

    OpenAIRE

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Gemma C. Solomon

    2015-01-01

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes, can in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions or to increase...

  1. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    DEFF Research Database (Denmark)

    Chi, Qijin; Farver, O; Ulstrup, Jens

    2005-01-01

    A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...

  2. Theory and experiments of electron-hole recombination at silicon/silicon dioxide interface traps and tunneling in thin oxide MOS transistors

    Science.gov (United States)

    Cai, Jin

    2000-10-01

    Surface recombination and channel have dominated the electrical characteristics, performance and reliability of p/n junction diodes and transistors. This dissertation uses a sensitive direct-current current voltage (DCIV) method to measure base terminal currents (IB) modulated by the gate bias (VGB) and forward p/n junction bias (VPN) in a MOS transistor (MOST). Base terminal currents originate from electron-hole recombination at Si/SiO2 interface traps. Fundamental theories which relate DCIV characteristics to device and material parameters are presented. Three theory-based applications are demonstrated on both the unstressed as well as hot-carrier-stressed MOSTs: (1) determination of interface trap density and energy levels, (2) spatial profile of interface traps in the drain/base junction-space-charge region and in the channel region, and (3) determination of gate oxide thickness and impurity doping concentrations. The results show that interface trap energy levels are discrete, which is consistent with those from silicon dangling bonds; in unstressed MOS transistors interface trap density in the channel region rises sharply toward source and drain, and after channel-hot-carrier stress, interface trap density increases mostly in the junction space-charge region. As the gate oxide thins below 3 nm, the gate oxide leakage current via quantum mechanical tunneling becomes significant. A gate oxide tunneling theory which refined the traditional WKB tunneling probability is developed for modeling tunneling currents at low electric fields through a trapezoidal SiO2 barrier. Correlation with experimental data on thin oxide MOSTs reveals two new results: (1) hole tunneling dominates over electron tunneling in p+gate p-channel MOSTs, and (2) the small gate/drain overlap region passes higher tunneling currents than the channel region under depletion to flatband gate voltages. The good theory-experimental correlation enables the extraction of impurity doping concentrations

  3. Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Medina-Bailón, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

    2015-06-29

    We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.

  4. Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

    International Nuclear Information System (INIS)

    We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of the inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher ION levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures

  5. Four-electron model for singlet and triplet excitation energy transfers with inclusion of coherence memory, inelastic tunneling and nuclear quantum effects

    Science.gov (United States)

    Suzuki, Yosuke; Ebina, Kuniyoshi; Tanaka, Shigenori

    2016-08-01

    A computational scheme to describe the coherent dynamics of excitation energy transfer (EET) in molecular systems is proposed on the basis of generalized master equations with memory kernels. This formalism takes into account those physical effects in electron-bath coupling system such as the spin symmetry of excitons, the inelastic electron tunneling and the quantum features of nuclear motions, thus providing a theoretical framework to perform an ab initio description of EET through molecular simulations for evaluating the spectral density and the temporal correlation function of electronic coupling. Some test calculations have then been carried out to investigate the dependence of exciton population dynamics on coherence memory, inelastic tunneling correlation time, magnitude of electronic coupling, quantum correction to temporal correlation function, reorganization energy and energy gap.

  6. Electron tunneling studies of spin-flip scattering with native and artificial rare-earth barriers

    International Nuclear Information System (INIS)

    Both artificial and native rare earth (RE) tunnel barriers have been successfully fabricated. Artificial barriers are of the form M-REOx-M (M = Al, Pb, PbBi; RE = Ho, Dy, Gd, Lu), and native barriers are of the form RE-REOx-s (S = Pb, PbBi; RE = Dy, Ho). Artificial barriers are formed by oxidizing a thin (5-20 angstrom) film of evaporated RE. Current-Voltage characteristics (I-V) produced by Al-REOx-Al junctions shown substantial gap depression and gap smearing for magnetic rare earths (Ho, Dy, Gd). Using the Abrikosov-Gorkov (AG) theory of spin-flip scattering, we have successfully fit gap-depressed I-V's. Since the actual experimental temperature (T = 0.93 degree K) corresponds to a high reduced temperature (T/Tc) for Al, the AG predicted temperature dependence of the pair potential was necessary to obtain good fits. Our tunneling experiments utilize a variety of fabrication geometries. Our results do not support the view that contact between Al and the REOx barrier is responsible for gap depression. Instead, they indicate that gap depression is caused by inter-diffusion of Al and RE at the metal-metal interface. Native Dy barriers have been fabricated in-situ using a wet-oxygen ambient. The presence of water was found to be crucial for the formation of low leakage (0.6%) barriers. PbBi counter-electrodes show no sign-of-gap depression, despite clean contact with the DyOx barriers. Barrier characteristics for native RE barriers are quite different from those of artificial RE barriers. Native RE dV/dI's are quite symmetric corresponding to rectangular (flat) WKB barriers. The average height and width are 1.02 eV and 27.8 A, respectively. IETS has been performed for both HoOx and DyOx barriers. We report new quantitative results for barrier phonons in both HoOx and DyOx

  7. The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector

    OpenAIRE

    M.V. Tkach; Ju.O. Seti; Grynyshyn, Y. B.; O.M. Voitsekhivska

    2014-01-01

    The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa1-xAs which is an active region of quantum cascade detector. It is established that indepe...

  8. Checklist Manifesto for Electronic Resources: Getting Ready for the Fiscal Year and Beyond

    Science.gov (United States)

    England, Lenore; Fu, Li; Miller, Stephen

    2011-01-01

    Organization of electronic resources workflow is critical in the increasingly complicated and complex world of library management. A simple organizational tool that can be readily applied to electronic resources management (ERM) is the use of checklists. Based on the principles discussed in The Checklist Manifesto: How to Get Things Right, the…

  9. Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

    OpenAIRE

    Sun, Jie; Jin, Peng; Zhao, Chang; Yu, LiKe; Ye, Xiaoling; Xu, Bo; Chen, Yonghai; Wang, Zhanguo

    2007-01-01

    Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations ar...

  10. Electronic resource management practical perspectives in a new technical services model

    CERN Document Server

    Elguindi, Anne

    2012-01-01

    A significant shift is taking place in libraries, with the purchase of e-resources accounting for the bulk of materials spending. Electronic Resource Management makes the case that technical services workflows need to make a corresponding shift toward e-centric models and highlights the increasing variety of e-formats that are forcing new developments in the field.Six chapters cover key topics, including: technical services models, both past and emerging; staffing and workflow in electronic resource management; implementation and transformation of electronic resource management systems; the ro

  11. Electronic transport through EuO spin-filter tunnel junctions

    KAUST Repository

    Jutong, Nuttachai

    2012-11-12

    Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

  12. On the recollision-free excitation of krypton during ultrafast multi-electron tunnel ionization

    International Nuclear Information System (INIS)

    The probability of multiple ionization of krypton by 50 femtosecond circularly polarized laser pulses, independent of the optical focal geometry, has been obtained for the first time. The excellent agreement over the intensity range 100 TW cm-2 to 100 PW cm-2 with the recent predictions of Kornev et al (2003 Phys. Rev. A 68 043414) provides the first experimental confirmation that non-recollisional electronic excitation can occur in strong-field ionization. This is particularly true for higher stages of ionization, when the laser intensity exceeds 10 PW cm-2 as the energetic departure of the ionized electron(s) diabatically distorts the wavefunctions of the bound electrons. By scaling the probability of ionization by the focal volume, we discuss why this mechanism was not apparent in previous studies

  13. The Relevancy of Graduate Curriculum to Human Resource Professionals' Electronic Communication.

    Science.gov (United States)

    Hoell, Robert C.; Henry, Gordon O.

    2003-01-01

    Electronic communications of human resource professionals and the content of 23 university human resource management courses were categorized using the Human Resource Certification Institute's body of knowledge. Differences between proportion of topics discussed and topics covered in curricula suggest some topics are over- or undertaught.…

  14. Strategic Planning for Electronic Resources Management: A Case Study at Gustavus Adolphus College

    Science.gov (United States)

    Hulseberg, Anna; Monson, Sarah

    2009-01-01

    Electronic resources, the tools we use to manage them, and the needs and expectations of our users are constantly evolving; at the same time, the roles, responsibilities, and workflow of the library staff who manage e-resources are also in flux. Recognizing a need to be more intentional and proactive about how we manage e-resources, the…

  15. Electronic phase diagram of NaFe1-xCoxAs investigated by scanning tunneling microscopy

    Institute of Scientific and Technical Information of China (English)

    Zhou Xiao-Dong; Cai Peng; Wang Ya-Yu

    2013-01-01

    Our recent scanning tunneling microscopy (STM) studies of the NaFe1-xCoxAs phase diagram over a wide range of dopings and temperatures are reviewed.Similar to the high-Tc cuprates,the iron-based superconductors lie in close proximity to a magnetically ordered phase.Therefore,it is widely believed that magnetic interactions or fluctuations play an important role in triggering their Cooper pairings.Among the key issues regarding the electronic phase diagram are the properties of the parent spin density wave (SDW) phase and the superconducting (SC) phase,as well as the interplay between them.The NaFe1-xCoxAs is an ideal system for resolving these issues due to its rich electronic phases and the charge-neutral cleaved surface.In our recent work,we directly observed the SDW gap in the parent state,and it exhibits unconventional features that are incompatible with the simple Fermi surface nesting picture.The optimally doped sample has a single SC gap,but in the underdoped regime we directly viewed the microscopic coexistence of the SDW and SC orders,which compete with each other.In the overdoped regime we observed a novel pseudogap-like feature that coexists with superconductivity in the ground state,persists well into the normal state,and shows great spatial variations.The rich electronic structures across the phase diagram of NaFel-xCoxAs revealed here shed important new light for defining microscopic models of the iron-based superconductors.In particular,we argue that both the itinerant electrons and local moments should be considered on an equal footing in a realistic model.

  16. Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

    Science.gov (United States)

    K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

    2016-01-01

    In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations. PMID:27666523

  17. The determination of the electron-phonon interaction from tunneling data in the two-band superconductor MgB2

    CERN Document Server

    Daghero, D; Ummarino, G A; Dolgov, O V; Kortus, J; Golubov, A A; Shulga, S V

    2004-01-01

    We calculate the tunneling density of states (DOS) of MgB2 for different tunneling directions, by directly solving the real-axis, two-band Eliashberg equations (EE). Then we show that the numeric inversion of the standard single-band EE, if applied to the DOS of the two-band superconductor MgB2, may lead to wrong estimates of the strength of certain phonon branches (e.g. the E_2g) in the extracted electron-phonon spectral function alpha^(2)F(omega). The fine structures produced by the two-band interaction turn out to be clearly observable only for tunneling along the ab planes in high-quality single crystals. The results are compared to recent experimental data.

  18. "Not" a One-Size-Fits-All Solution: Lessons Learned from Implementing an Electronic Resources Management System in Three Days

    Science.gov (United States)

    Pan, Denise

    2009-01-01

    Auraria Library purchased Innovative Interfaces, Inc.'s Millennium Electronic Resources Management (ERM) to manage data about acquisitions, licensing, troubleshooting, and usage statistics of electronic resources. After 3 days of implementation, the software vendor enabled resources records to display. As a result, the electronic resources team…

  19. Role of two-photon electronic transitions in the formation of active dynamic conductivity in a three-barrier resonance tunneling structure with an applied Dc electric field

    International Nuclear Information System (INIS)

    The theory of active dynamic conductivity in a three-barrier resonance tunneling structure subjected to the combined action of a weak electromagnetic field and a longitudinal dc electric field is developed with regard for the contribution of laser induced one- and two-photon electronic transitions with different frequencies. For this purpose, the full Schroedinger equation is solved in the effective mass approximation and with the use of the model of rectangular potential wells and barriers for an electron. The maximum contribution of two-photon transitions to the formation of the total active dynamic conductivity in laser-induced transitions is shown not to exceed 38%. Geometric configurations of the resonance tunneling structure, for which the laser radiation intensity increases due to laser induced two-photon electronic transitions, are determined

  20. Planar electron-tunneling Si/Si0.7Ge0.3 triple-barrier resonant tunneling diode formed on undoped strain-relaxed buffer with flat surface

    Science.gov (United States)

    Okubo, Takafumi; Tsukamoto, Takahiro; Suda, Yoshiyuki

    2014-03-01

    We demonstrated a planar electron-tunneling Si/Si0.7Ge0.3 triple-barrier (TB) resonant tunneling diode (RTD) formed via a channel layer on an undoped strain-relaxed quadruple-Si1-xGex-layer (QL) buffer. Compared with a conventional vertical Si/Si0.7Ge0.3 TB RTD formed on a heavily doped QL buffer, the dislocation density is low, the surface is flat, and the resonance current density is much larger. These observations, together with analyses of current-voltage (I-V) curve fitting to the physics-based analytical expression, suggest that the enhanced I-V characteristics in the planar RTD are related to decreases in the number of crystalline defect states and the structural and potential fluctuations.

  1. Electronic coupling in self-assembled nanocrystal arrays, a scanning tunneling microscopy study

    NARCIS (Netherlands)

    Overgaag, K.

    2008-01-01

    Colloidal semiconductor nanocrystals (NCs) are one the most actively studied components of modern nanoscience. The high degree of control over their size and shape makes it possible to accurately tune their opto-electronic properties through quantum confinement. Colloidal nanocrystals can serve as b

  2. Remote Electronic Resources and the OPAC: Illustrated by the Unisa Library Experience.

    Science.gov (United States)

    Van der Merwe, Ina; Van Eeden, Welna; Hartzer, Sandra

    This paper describes the Unisa (University of South Africa) Library's experience with cataloging remote electronic resources, including electronic journals, electronic text files, online databases, digital images, Unisa campus Web sites, and mailing list discussions. The first section discusses the decision to add bibliographic references for…

  3. Experimental investigation of the possibilities of the optical tunnelling of electron from a metal surface induced by strong CO2 laser pulses

    International Nuclear Information System (INIS)

    According to the fundamental laws of the intense field QED, the general processes governing the laser-induced electron emission from atoms or solids traditionally may be interpreted as two complementary limiting interaction processes of the same phenomenon. The first is the multiphoton type process, when the electron interacts only with several well determined small number of photons (quantum limit), the second is the tunnelling type, when the number of the interacting photons is increasingly high (classical limit). While practically all research activity was concentrated both theoretically and experimentally to the multiphoton questions, less attention was paid to the tunnelling case, in spite of the fact that the early beginning of the intense field QED started with the pronunciation of this latter. After a short summarizing formulation of the topics, we describe several experiments performed by use at the Laval University for the study of the laser induced tunnelling. The surface photoeffect of gold proved to be a good experimental tool for these studies giving complementary results to the experiments carried out by use for the tunnel ionization of gas atoms. 36 references, 9 figures

  4. Strong overtones modes in inelastic electron tunneling spectroscopy with cross-conjugated molecules

    DEFF Research Database (Denmark)

    Jørgensen, Jacob Lykkebo; Gagliardi, Alessio; Pecchia, Alessandro;

    2013-01-01

    Cross-conjugated molecules are known to exhibit destructive quantum interference, a property that has recently received considerable attention in single-molecule electronics. Destructive quantum interference can be understood as an antiresonance in the elastic transmission near the Fermi energy and...... is larger than for molecules without interference, the overall behavior of the molecule is still dominated by the quantum interference feature. Second, an ongoing challenge for single molecule electronics is understanding and controlling the local geometry at the molecule-surface interface. With this...... property of the transmission channels of the π system only, and consequently, in the vicinity of the interference feature, the transmission channels of the σ system and the π system become equally transmissive. This allows for scattering between the different transmission channels, which serves as a...

  5. Theoretical study of electron tunneling through the spiral molecule junctions along spiral paths.

    Science.gov (United States)

    Xu, Xiaodong; Li, Weiqi; Zhou, Xin; Wang, Qiang; Feng, Jikang; Tian, Wei Quan; Jiang, Yongyuan

    2016-02-01

    The electronic transport properties of carbohelicenes and heterohelicenes absorbed between two metal electrodes have been investigated by using the nonequilibrium Green's function in combination with the density function theory. The transport properties of the molecular junctions are mainly dependent on the nature of spiral molecules. The detailed analyses of the transmission spectra, the energy levels as well as the spatial distribution of molecular projected self-consistent Hamiltonian explain how the geometry of molecules affects the intra-molecular electronic coupling. The spiral current in the configurations can be achieved by tuning the outer edge states of spiral-shaped molecules. Furthermore, the symmetric current-voltage characteristics are investigated with the bias changing for all devices as well as an negative differential resistance behavior is observed. PMID:26762548

  6. Interaction effects on the tunneling of electron-hole pairs in coupled quantum dots

    Science.gov (United States)

    Guerrero, Hector M.; Cocoletzi, Gregorio H.; Ulloa, Sergio E.

    2001-03-01

    The transit time of carriers is beginning to be an important parameter in the physical operation of semiconductor quantum dot `devices'. In the present work, we study the coherent propagation of electron-hole pairs in coupled self-assembled quantum dots in close proximity. These systems, achieved experimentally in a number of different geometries, have been recently implemented as a novel storage of optical information that may give rise to smart pixel technology in the near future [1]. Here, we apply an effective mass hamiltonian approach and solve numerically the time dependent Schroedinger equation of a system of photo-created electron-hole pairs in the dots. Our approach takes into account both Coulomb interactions and confinement effects. The time evolution is investigated in terms of the structural parameters for typical InAs-GaAs dots. Different initial conditions are considered, reflecting the basic processes that would take place in these experiments. We study the probabilities of finding the electron and hole in either the same or adjacent quantum dot, and study carefully the role of interactions in this behavior. [1] T. Lundstrom, W. Schoenfeld, H. Lee, and P. M. Petroff, Science 286, 2312 (1999).

  7. 电子自旋共振扫描隧道显微镜%Electron spin resonance scanning tunneling microscope

    Institute of Scientific and Technical Information of China (English)

    郭阳; 李健梅; 陆兴华

    2015-01-01

    单电子自旋极有可能发展成为未来信息学的基础。以电子自旋为核心的新型单分子或单原子器件将最终成为基本信息单元,基于单电子的自旋态将有可能构筑未来量子计算机的量子比特。但是,如何实现对单个电子自旋及其相干态和纠缠态的测量和控制,目前仍然是一个很大的挑战。作为调控单个电子自旋的重要实验手段,电子自旋共振扫描隧道显微镜的发展一直备受关注。文章简要介绍了电子自旋共振扫描隧道显微镜的基本概念,阐述了其发展历史和最新进展,归纳了机理探索的研究成果,论述了该设备研发面临的挑战与对策,并对未来的发展和应用做了展望。%It is highly expected that the future informatics will be based on the spins of in-dividual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins;the quantum computer in the fu-ture can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this in-strument and recent progresses are reviewed. The underlying mechanism is explored and summa-rized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented.

  8. 电子自旋共振扫描隧道显微镜%Electron spin resonance scanning tunneling microscope

    Institute of Scientific and Technical Information of China (English)

    郭阳; 李健梅; 陆兴华

    2015-01-01

    It is highly expected that the future informatics will be based on the spins of in-dividual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins;the quantum computer in the fu-ture can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this in-strument and recent progresses are reviewed. The underlying mechanism is explored and summa-rized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented.%单电子自旋极有可能发展成为未来信息学的基础。以电子自旋为核心的新型单分子或单原子器件将最终成为基本信息单元,基于单电子的自旋态将有可能构筑未来量子计算机的量子比特。但是,如何实现对单个电子自旋及其相干态和纠缠态的测量和控制,目前仍然是一个很大的挑战。作为调控单个电子自旋的重要实验手段,电子自旋共振扫描隧道显微镜的发展一直备受关注。文章简要介绍了电子自旋共振扫描隧道显微镜的基本概念,阐述了其发展历史和最新进展,归纳了机理探索的研究成果,论述了该设备研发面临的挑战与对策,并对未来的发展和应用做了展望。

  9. Spin-flip induction of Fano resonance upon electron tunneling through atomic-scale spin structures

    Energy Technology Data Exchange (ETDEWEB)

    Val' kov, V. V., E-mail: vvv@iph.krasn.ru; Aksenov, S. V., E-mail: asv86@iph.krasn.ru [Russian Academy of Sciences, Siberian Branch, Kirensky Institute of Physics (Russian Federation); Ulanov, E. A. [Siberian State Aerospace University (Russian Federation)

    2013-05-15

    The inclusion of inelastic spin-dependent electron scatterings by the potential profiles of a single magnetic impurity and a spin dimer is shown to induce resonance features due to the Fano effect in the transport characteristics of such atomic-scale spin structures. The spin-flip processes leading to a configuration interaction of the system's states play a fundamental role for the realization of Fano resonance and antiresonance. It has been established that applying an external magnetic field and a gate electric field allows the conductive properties of spin structures to be changed radically through the Fano resonance mechanism.

  10. Acoustic analogue of electronic BLOCH oscillations and resonant Zener tunneling in ultrasonic superlattices.

    Science.gov (United States)

    Sanchis-Alepuz, Helios; Kosevich, Yuriy A; Sánchez-Dehesa, José

    2007-03-30

    We demonstrate the existence of Bloch oscillations of acoustic fields in sound propagation through a superlattice of water cavities and layers of methyl methacrylate. To obtain the acoustic equivalent of a Wannier-Stark ladder, we employ a set of cavities with different thicknesses. Bloch oscillations are observed as time-resolved oscillations of transmission in a direct analogy to electronic Bloch oscillations in biased semiconductor superlattices. Moreover, for a particular gradient of cavity thicknesses, an overlap of two acoustic minibands occurs, which results in resonant Zener-like transmission enhancement.

  11. Final Scientific/Technical Report: Electronics for Large Superconducting Tunnel Junction Detector Arrays for Synchrotron Soft X-ray Research

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, William K

    2009-03-06

    Superconducting tunnel junction (STJ) detectors offer a an approach to detecting soft x-rays with energy resolutions 4-5 times better and at rates 10 faster than traditions semiconductor detectors. To make such detectors feasible, however, then need to be deployed in large arrays of order 1000 detectors, which in turn implies that their processing electronics must be compact, fully computer controlled, and low cost per channel while still delivering ultra-low noise performance so as to not degrade the STJ's performance. We report on our progress in designing a compact, low cost preamplifier intended for this application. In particular, we were able to produce a prototype preamplifier of 2 sq-cm area and a parts cost of less than $30 that matched the energy resolution of the best conventional system to date and demonstrated its ability to acquire an STJ I-V curve under computer control, the critical step for determining and setting the detectors' operating points under software control.

  12. Ionization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors

    International Nuclear Information System (INIS)

    The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was investigated with ionizing and displacement damage radiation. The RTDs were subject to a maximum total gamma dose of 1 Mrad(InP), 55 MeV protons to a fluence of 3.5x1011 cm-2, high energy neutrons to a fluence of 5x1010 cm-2 and heavy ions with a maximum LET (InP) of 23.6 MeV-cm2/mg to a fluence of 1x107 cm-2. Using the peak-to-valley current ratios as the figure of merit, no radiation effects were detected on the RTDs measured under these circumstances. The 2-DEGTs were irradiated to a total gamma dose of 50 krad(GaAs) and 55 MeV protons to a fluence of 5x1010 cm-2. Under gamma irradiation, a reduction in transconductance was observed, while the proton irradiated devices show an enhancement in the transconductance. The magnitude of these effects was proportional to gamma dose and proton fluence respectively. The effects are transient. For the gamma exposure, the tested 2-DEGTs almost completely recovered their pre-radiation performance. However, the proton-irradiated devices only recovered about half-way to their pre-irradiated characteristics. The transient times were on order of hours and may indicate annealing effects

  13. Adsorption geometry of glycine on Cu(001) determined with low—energy electron diffraction and scanning tunnelling microscopy

    Institute of Scientific and Technical Information of China (English)

    葛四平; 赵学应; 等

    2002-01-01

    Using low-energy electron diffraction(LEED)and scanning tunnelling microscopy (STM) it has been found that glycine molecules adsorbed on Cu(001) can form but only the (2×4) superstructures.On the basis of the missing LEED spots of the surface,it has been concluded that.each(2×4) unit cell consists of two molecules,one being the mirror image of the other,the C-C axis of both molecules lies in the mirror plane of the Cu substrate without a significant shift and twish from the plane;and the two O atoms of the carboxylate group of both molecules locate at the same height level without significant buckling.According to these conclusions,a structural model has been propsed for the (2×4) superstructure (a model for the c(2×4) supersturcture already exists).We argue that the (2×4) and c(2×4) superstructures must have similar specific surface free energy,that their hydrogen bonds must be of N-H-OII type,and that their local adsorption geometry must be similar or even the same.The advantage of combining STM with LEED to determine surface sturctures is clearly demonstrated.

  14. Adsorption geometry of glycine on Cu(001) determined with low-energy electron diffraction and scanning tunnelling microscopy

    Institute of Scientific and Technical Information of China (English)

    葛四平; 赵学应; 盖峥; 赵汝光; 杨威生

    2002-01-01

    Using low-energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) it has been found thatglycine molecules adsorbed on Cu(001) can form but only the (2×4) and c(2×4) superstructures. On the basis of themissing LEED spots of the surface, it has been concluded that: each (2 ×4) unit cell consists of two molecules, one beingthe mirror image of the other; the C-C axis of both molecules lies in the mirror plane of the Cu substrate without asignificant shift and twist from the plane; and the two O atoms of the carboxylate group of both molecules locate at thesame height level without significant buckling. According to these conclusions, a structural model has been proposed forthe (2×4) superstructure (a model for the c(2×4) superstructure already exists). We argue that the (2×4) and c(2×4)superstructures must have similar specific surface free energy, that their hydrogen bonds must be of N-H-OⅡ type, andthat their local adsorption geometry must be similar or even the same. The advantage of combining STM with LEEDto determine surface structures is clearly demonstrated.

  15. Electronic Non-Resonant Tunneling through Diaminoacenes: A First-Principles Investigation

    Institute of Scientific and Technical Information of China (English)

    ZHENG Ji-Ming; HUANG Yao-Qing; REN Zhao-Yu; YANG Hui-Jing; CAO Mao-Sheng

    2011-01-01

    The electron transport through diaminoacenes sandwiched between two Au electrodes is simulated by using a first-principles analysis. The nonlinear current-voltage characteristic is observed. Effects of the ring number and positions of amine groups on equilibrium transport properties are found. For 1,4 series, the greater the number of the rings, the stronger the transmission spectrum near the Fermi energy. For 2,6 series, the larger the number of the rings, the weaker the transmission spectrum near the Fermi energy. This is helpful for understanding the recently reported results on conductance measurements using amines.%@@ The electron transport through diaminoacenes sandwiched between two Au electrodes is simulated by using a first-principles analysis.The nonlinear current-voltage characteristic is observed.Effects of the ring number and positions of amine groups on equilibrium transport properties are found.For 1,4 series, the greater the number of the rings, the stronger the transmission spectrum near the Fermi energy.For 2,6 series, the larger the number of the rings, the weaker the transmission spectrum near the Fermi energy.This is helpful for understanding the recently reported results on conductance measurements using amines.

  16. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  17. Nanoscale magnetic characterization of tunneling magnetoresistance spin valve head by electron holography.

    Science.gov (United States)

    Park, Hyun Soon; Hirata, Kei; Yanagisawa, Keiichi; Ishida, Yoichi; Matsuda, Tsuyoshi; Shindo, Daisuke; Tonomura, Akira

    2012-12-01

    Nanostructured magnetic materials play an important role in increasing miniaturized devices. For the studies of their magnetic properties and behaviors, nanoscale imaging of magnetic field is indispensible. Here, using electron holography, the magnetization distribution of a TMR spin valve head of commercial design is investigated without and with a magnetic field applied. Characterized is the magnetic flux distribution in complex hetero-nanostructures by averaging the phase images and separating their component magnetic vectors and electric potentials. The magnetic flux densities of the NiFe (shield and 5 nm-free layers) and the CoPt (20 nm-bias layer) are estimated to be 1.0 T and 0.9 T, respectively. The changes in the magnetization distribution of the shield, bias, and free layers are visualized in situ for an applied field of 14 kOe. This study demonstrates the promise of electron holography for characterizing the magnetic properties of hetero-interfaces, nanostructures, and catalysts. PMID:22887895

  18. Field emission spectroscopy evidence for dual-barrier electron tunnelling in nanographite

    Energy Technology Data Exchange (ETDEWEB)

    Bandurin, D. A.; Kleshch, V. I. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Mingels, S.; Lützenkirchen-Hecht, D.; Müller, G. [FB C Physics Department, University of Wuppertal, 42119 Wuppertal (Germany); Obraztsov, A. N., E-mail: obraz@polly.phys.msu.ru [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Department of Physics and Mathematics, University of Eastern Finland, Joensuu 80101 (Finland)

    2015-06-08

    Nanocarbon films with upstanding flake-like graphite crystallites of nanometre thickness were fabricated by carbon condensation from a methane–hydrogen gas mixture activated by a direct-current discharge. The nanographite (NG) crystallites are composed of a few graphene layers. The adjacent atomic layers are connected partially at the edges of the crystallites to form strongly curved graphene structures. The extraordinary field emission (FE) properties were revealed for the NG films with an average current density of a few mA/cm{sup 2}, reproducibly obtained at a macroscopic applied field of about 1 V/μm. The integral FE current–voltage curves and electron spectra (FEES) of NG cathodes with multiple emitters were measured in a triode configuration. Most remarkably, above a threshold field, two peaks were revealed in FEES with different field-dependent shifts to lower energies. This behaviour evidences electron emission through a dual potential barrier, corresponding to carbon–carbon heterostructure formed as a result of the graphene bending.

  19. Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge{sub 1−x}Sn{sub x} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lei; Liang, Renrong, E-mail: liangrr@tsinghua.edu.cn; Wang, Jing; Xu, Jun [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-01-15

    Direct gap Ge{sub 1−x}Sn{sub x} alloys under [100] and [110] uniaxial strain are comprehensively investigated by theoretical calculations using the nonlocal empirical pseudopotential method (EPM). It is shown that [100] uniaxial tensile strain aids indirect-to-direct gap transition in Ge{sub 1−x}Sn{sub x} alloys. The Γ electron effective mass along the optimal direction under [110] uniaxial strain is smaller than those under [100] uniaxial strain and (001) biaxial strain. Additionally, the direct tunneling gap is smallest along the strain-perpendicular direction under [110] uniaxial tensile strain, resulting in a maximum direct band-to-band tunneling generation rate. An optimal [110] uniaxial tensile strain is favorable for high-performance direct gap Ge{sub 1−x}Sn{sub x} electronic devices.

  20. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2015-01-19

    We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

  1. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

    International Nuclear Information System (INIS)

    We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm2. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices

  2. Resonant tunnelling of electrons in multi-step single-barrier heterostructures

    Institute of Scientific and Technical Information of China (English)

    Wang Chang; Zhang Yong-Hua

    2006-01-01

    We have studied the quantum transport of electrons in a three-step single-barrier A1GaAs heterostructure under electric field. Using the quantum transmitting boundary method and Tsu-Esaki approach, we have calculated the transmission coefficient and current-voltage characteristic. The difference of the effective mass among the three barriers is taken into account. Effects of the barrier width on transmission coefficient and peak-to-valley current ratios are examined. The largest peak-to-valley current ratio is obtained when the ratio of widths of the left, middle, and right barrier is fixed at 4:2:1. The calculated results may be helpful for designing devices based on three-step barrier heterostructures.

  3. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    OpenAIRE

    Chi, Qijin; Farver, Ole; Ulstrup, Jens

    2005-01-01

    A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi-biological environment, suitable for detailed observations of long-range protein interfacial ET at the nanoscale and single-molecule levels. Because azurin is located at clearly identifiable fixed site...

  4. Electronic Engineering Library In Sweden: A Quality Assessed Internet Resource from the Swedish Technological University Libraries

    OpenAIRE

    Lager, Gunnar; Nordlander, Marianne

    2012-01-01

    A status report of the plans and issues under discussion in creating this cooperative electronic national resource to support engineering education in Sweden. An opportunity to preview what is currently under construction for the EELS.

  5. STM based inelastic electron tunneling spectroscopy on NdBa{sub 2}Cu{sub 3}O{sub 7-{delta}}

    Energy Technology Data Exchange (ETDEWEB)

    Das, Pintu [Institute of Experimental Physics, University of Saarland, 66041, Saarbruecken (Germany); Max Planck Institute of Chemical Physics of Solids, Noethnitzer Str. 40, 01187 Dresden (Germany); Koblischka, Michael R.; Hartmann, Uwe [Institute of Experimental Physics, University of Saarland, 66041, Saarbruecken (Germany); Rosner, Helge [Max Planck Institute of Chemical Physics of Solids, Noethnitzer Str. 40, 01187 Dresden (Germany); Wolf, Thomas [Forschungzentrum Karlsruhe GmbH, Institute of Solid State Physics, 76021 Karlsruhe (Germany)

    2008-07-01

    Inelastic electron tunneling spectroscopy (IETS) is a very powerful tool to detect collective excitations in conducting materials. Due to inelastic excitation by tunneling electrons, a very weak kink is usually observed in dI/dV curves at the bias voltage corresponding to the excitation energy. In IETS on s wave superconductors, phonon modes ({omega}{sub ph}) were observed at energies given by E = {delta}+ {Dirac_h}{omega}{sub ph}, where {delta} is the energy gap. Recently IETS using scanning tunneling spectroscopy (STS) has been used to detect a bosonic mode in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}. In the STS data obtained on NdBa{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals, we observed peaks in d{sup 2}I/dV{sup 2} curves beyond the coherence peaks from which collective excitation energies of {proportional_to}23 meV and {proportional_to} 34 meV have been found for the samples with T{sub c} of 93.5 K and 95.5 K respectively. Band structure calculation shows that there is no structure in the density of state at the observed energies which thus supports the presumption that the observed kinks in dI/dV curves are due to inelastic scattering of electrons.

  6. Improving Electronic Resources Management (ERM): Critical Work Flow and Operations Solutions

    OpenAIRE

    Appleton, Betsy; Regan, Shannon; England, Lenore; Fu, Li

    2012-01-01

    Organization of electronic resources work flow and operations are critical in the increasingly complex world of library management. The way in which this management process is structured differs according to the type of library and organizational structure within. A common goal, though, is strategically sustaining access and availability to electronic resources over time and the effective management of the library staff that maintains them. In this joint session, librarians from George Mason ...

  7. Electron beam pasteurised oil palm waste: a potential feed resource

    International Nuclear Information System (INIS)

    Pasteurization of oil palm empty fruit bunch (EFB) was performed using electron beam single sided irradiation. The dose profiles of oil palm EFB samples for different thickness in both directions X and Y were established. The results showed the usual characteristics dose uniformity as sample thickness decreased. The mean average absorbed dose on both sides at the surface and bottom of the samples for different thickness samples lead to establishing depth dose curve. Based on depth dose curve and operation conditions of electron beam machine, the process throughput for pasteurized oil palm EFB were estimated. (Author)

  8. Managing Selection for Electronic Resources: Kent State University Develops a New System to Automate Selection

    Science.gov (United States)

    Downey, Kay

    2012-01-01

    Kent State University has developed a centralized system that manages the communication and work related to the review and selection of commercially available electronic resources. It is an automated system that tracks the review process, provides selectors with price and trial information, and compiles reviewers' feedback about the resource. It…

  9. 21 October 2008 - LHC Inauguration - Deputy Minister for Environment, Physical Planning and Public Works T. Xanthopulos welcomed by CERN Director-General R. Aymar, visiting the ATLAS cavern and LHC tunnel and signing the electronic guest book with E. Tsesmelis.

    CERN Multimedia

    CERN Photo Service

    2008-01-01

    21 October 2008 - LHC Inauguration - Deputy Minister for Environment, Physical Planning and Public Works T. Xanthopulos welcomed by CERN Director-General R. Aymar, visiting the ATLAS cavern and LHC tunnel and signing the electronic guest book with E. Tsesmelis.

  10. Electronic Information Resources in Undergraduate Education: An Exploratory Study of Opportunities for Student Learning and Independence.

    Science.gov (United States)

    McDowell, Liz

    2002-01-01

    This qualitative interview-based study examines lecturer perspectives on the roles of electronic information resources in undergraduate education. Highlights include electronic academic libraries; changes toward more constructivist approaches to learning; information quality on the Web; plagiarism; information use; information literacy; and…

  11. Where Do Electronic Books Fit in the College Research Arsenal of Resources?

    Science.gov (United States)

    Barbier, Patricia

    2007-01-01

    Student use of electronic books has become an accepted supplement to traditional resources. Student use and satisfaction was monitored through an online course discussion board. Increased use of electronic books indicate this service is an accepted supplement to the print book collection.

  12. Cost of Electronic Reference Resources and LCM: The Library Costing Model.

    Science.gov (United States)

    Hayes, Robert M.

    1996-01-01

    Views assessment of "Costs of Electronic Reference Resources" both in a general descriptive framework and within the context of a specific model for costing of library operations and services called LCM, the Library Costing Model. Examples of costing data uses are provided, and categories of costs are related to types of electronic reference…

  13. End-of-life resource recovery from emerging electronic products

    DEFF Research Database (Denmark)

    Parajuly, Keshav; Habib, Komal; Cimpan, Ciprian;

    2016-01-01

    -case scenario, only 47% of the total materials in RVCs are ultimately recycled. While this low material recovery is mainly due to the lower plastic recycling rate, other market realities and the complex material flows in the recycling chain also contribute to it. The study provides a robust methodological...... at a conventional ‘shred-and-separate’ type preprocessing plant in Denmark. A detailed material flow analysis was performed throughout the recycling chain. The results show a mismatch between product design and EoL processing, and the lack of practical implementation of ‘Design for EoL’ thinking. In the best...... approach for assessing the EoL performance based on the knowledge of a product and its complex recycling chain. The lessons learned can be used to support both the design and EoL processing of products with similar features, which carry a high potential for resource recovery, especially at the initial...

  14. Role of valence states of adsorbates in inelastic electron tunneling spectroscopy: A study of nitric oxide on Cu(110) and Cu(001)

    Science.gov (United States)

    Shiotari, Akitoshi; Okuyama, Hiroshi; Hatta, Shinichiro; Aruga, Tetsuya; Alducin, Maite; Frederiksen, Thomas

    2016-08-01

    We studied nitric oxide (NO) molecules on Cu(110) and Cu(001) surfaces with low-temperature scanning tunneling microscopy (STM) and density functional theory (DFT). NO monomers on the surfaces are characterized by STM images reflecting 2 π* resonance states located at the Fermi level. NO is bonded vertically to the twofold short-bridge site on Cu(110) and to the fourfold hollow site on Cu(001). When NO molecules form dimers on the surfaces, the valence orbitals are modified due to the covalent bonding. We measured inelastic electron tunneling spectroscopy (IETS) for both NO monomers and dimers on the two surfaces, and detected characteristic structures assigned to frustrated rotation and translation modes by density functional theory simulations. Considering symmetries of valence orbitals and vibrational modes, we explain the intensity of the observed IETS signals in a qualitative manner.

  15. MULER: Building an Electronic Resource Management (ERM Solution at York University

    Directory of Open Access Journals (Sweden)

    Aaron August Lupton

    2012-01-01

    Full Text Available Many university libraries now utilize an Electronic Resource Management (ERM system to assist with operations related to electronic resources. An ERM is a relational database containing information such as suppliers, costs, holdings, and renewal dates for electronic resources, both at the database and title levels. While commercial ERM products are widely available, some institutions are custom building their own ERM in- house. This article describes how York University in Toronto, Canada, did just that by building a system called Managing University Library Electronic Resources (MULER. The article details the background and history of how electronic resources were managed pre-MULER; why a new ERM was needed; the planning process; the current and innovative functions of MULER, including integration of MULER data into York University Libraries search and discovery layer, Vufind; subject tagging in MULER; new functions to be added; and lessons learned from the project. Positive and negative implications of choosing an in-house project over paying for a commercial product are also discussed.

  16. Electron tunneling through barriers of adjustable width : Role of the image potential and the wetting behavior of Cs by He

    OpenAIRE

    Zech, Martin; Bromberger, Hubertus; Klier, Jürgen; Leiderer, Paul; Wyatt, Adrian F. G.

    2008-01-01

    Photocurrents from cesium, flowing through gaseous 3He or 4He and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T=1.33 K. At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of 3He grows on the Cs and forms a tunnel barrier; but for 4He, the film is too thin to form a tunnel barrier below liquid-vapor coexistence. This is because 4He does not wet...

  17. The National Site Licensing of Electronic Resources: An Institutional Perspective

    Directory of Open Access Journals (Sweden)

    Xiaohua Zhu

    2011-06-01

    Full Text Available While academic libraries in most countries are struggling to negotiate with publishers and vendors individually or collaboratively via consortia, a few countries have experimented with a different model, national site licensing (NSL. Because NSL often involves government and large-scale collaboration, it has the potential to solve many problems in the complex licensing world. However, not many nations have adopted it. This study uses historical research approach and the comparative case study research method to explore the seemingly low level of adoption. The cases include the Canadian National Site Licensing Project (CNSLP, the United Kingdom’s National Electronic Site Licensing Initiative (NESLI, and the United States, which has not adopted NSL. The theoretical framework guiding the research design and data collection is W. Richard Scott’s institutional theory, which utilizes three supporting pillars—regulative, normative, and cultural-cognitive—to analyze institutional processes. In this study, the regulative pillar and the normative pillar of NSL adoption— an institutional construction and change—are examined. Data were collected from monographs, research articles, government documents, and relevant websites. Based on the analysis of these cases, a preliminary model is proposed for the adoption of NSL. The factors that support a country’s adoption of NSL include the need for new institutions, a centralized educational policy-making system and funding system, supportive political trends, and the tradition of cooperation. The factors that may prevent a country from adopting NSL include decentralized educational policy and funding, diversity and the large number of institutions, the concern for the “Big Deal,” and the concern for monopoly.

  18. We're All in This Together: Library Faculty and Staff and Their Reporting of Electronic Resource Problems

    Science.gov (United States)

    Foster, Anita; Williams, Sarah C.

    2010-01-01

    Libraries continue to shift budgets toward obtaining more electronic resources. Electronic resources can develop problems at any time when a library offers access. Staff collaboration is vital in ensuring availability to those resources. Partnering with areas in the library that work most closely with patrons can help share the load of the…

  19. A virtual detector approach to tunnel ionization and tunneling times

    CERN Document Server

    Teeny, Nicolas; Bauke, Heiko

    2016-01-01

    Tunneling times in atomic ionization is studied theoretically by a virtual detector approach. A virtual detector is a hypothetical device that allows to monitor the wave-function's density with spatial and temporal resolution during the ionization process. With this theoretical approach, it becomes possible to define unique moments when the electron enters and leaves with highest probability the classically forbidden region from first principles and a tunneling time can be specified unambiguously. It is shown that neither the moment when the electron enters the tunneling barrier nor when it leaves the tunneling barrier coincide with the moment when the external electric field reaches its maximum. Under the tunneling barrier as well as at the exit the electron has a nonzero velocity in electric field direction. This nonzero exit velocity has to be incorporated when the free motion of the electron is modeled by classical equations of motion.

  20. Tunneling Processes in Optically Excited Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    LI Xiu-Ping; WEI Hua-Rong; XU Li-Ping; GONG Jian-Ping; YAN Wei-Xian

    2011-01-01

    The single-electron tunneling processes in optically excited coupled quantum dots can be divided into two parts: the electron and the hole parts, which are analytically obtained in the framework of the Keldysh formalism. The tunneling process is selective tunneling, which results in dark tunneling states. The tunneling currents are co-determined by the resonance energies and probability distributions of the particular quantum channels defined by the electron-hole complex resonant states.%The single-electron tunneling processes in optically excited coupled quantum dots can be divided into two parts:the electron and the hole parts,which are analytically obtained in the framework of the Keldysh formalism.The tunneling process is selective tunneling,which results in dark tunneling states.The tunneling currents are co-determined by the resonance energies and probability distributions of the particular quantum channels defined by the electron-hole complex resonant states.Probing the fine-energy structure of the exciton complexes[1-10] in an optically excited quantum dot is an important way of exploring new mechanisms in nanostructures.Single electron tunneling (SET) devices consisting of a central quantum dot (QD) and a tunneling coupled source and drain have become important optoelectronic nano-devices.[11,12

  1. Connecting knowledge resources to the veterinary electronic health record: opportunities for learning at point of care.

    Science.gov (United States)

    Alpi, Kristine M; Burnett, Heidi A; Bryant, Sheila J; Anderson, Katherine M

    2011-01-01

    Electronic health records (EHRs) provide clinical learning opportunities through quick and contextual linkage of patient signalment, symptom, and diagnosis data with knowledge resources covering tests, drugs, conditions, procedures, and client instructions. This paper introduces the EHR standards for linkage and the partners-practitioners, content publishers, and software developers-necessary to leverage this possibility in veterinary medicine. The efforts of the American Animal Hospital Association (AAHA) Electronic Health Records Task Force to partner with veterinary practice management systems to improve the use of controlled vocabulary is a first step in the development of standards for sharing knowledge at the point of care. The Veterinary Medical Libraries Section (VMLS) of the Medical Library Association's Task Force on Connecting the Veterinary Health Record to Information Resources compiled a list of resources of potential use at point of care. Resource details were drawn from product Web sites and organized by a metric used to evaluate medical point-of-care resources. Additional information was gathered from questions sent by e-mail and follow-up interviews with two practitioners, a hospital network, two software developers, and three publishers. Veterinarians with electronic records use a variety of information resources that are not linked to their software. Systems lack the infrastructure to use the Infobutton standard that has been gaining popularity in human EHRs. While some veterinary knowledge resources are digital, publisher sites and responses do not indicate a Web-based linkage of veterinary resources with EHRs. In order to facilitate lifelong learning and evidence-based practice, veterinarians and educators of future practitioners must demonstrate to veterinary practice software developers and publishers a clinically-based need to connect knowledge resources to veterinary EHRs.

  2. Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co{sub 2}MnGe Heusler alloys as magnetic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, M., E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407), Université Paris 13, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Genevois, C. [Groupe de Physique des Matériaux, UMR CNRS 6634, Site Universitaire du Madrillet, BP12, 76801 Saint Etienne du Rouvray cedex (France); Zighem, F.; Roussigné, Y.; Chérif, S.M. [LSPM (CNRS-UPR 3407), Université Paris 13, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Westerholt, K. [Institut für Experimentelle Physik, Ruhr-Universität Bochum, 44780 Bochum (Germany); El Bahoui, A.; Fnidiki, A. [Groupe de Physique des Matériaux, UMR CNRS 6634, Site Universitaire du Madrillet, BP12, 76801 Saint Etienne du Rouvray cedex (France); Moch, P. [LSPM (CNRS-UPR 3407), Université Paris 13, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France)

    2014-01-31

    High resolution transmission electron microscopy, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co{sub 2}MnGe(13 nm)/Al{sub 2}O{sub 3}(3 nm)/Co(13 nm) tunnel magnetic junctions (TMJs), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al{sub 2}O{sub 3} tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co{sub 2}MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate, the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for a conclusion that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate, the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co{sub 2}MnGe film. The large Co concentration in the Al{sub 2}O{sub 3} interlayer prevents for a simple interpretation of the observed spectra

  3. Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100) surface investigated by scanning tunneling microscopy and low energy electron diffraction

    OpenAIRE

    Stefan Gärtner; Benjamin Fiedler; Oliver Bauer; Antonela Marele; Moritz M. Sokolowski

    2014-01-01

    We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA) on the clean and on the oxygen pre-covered Cu(100) surface [referred to as (√2 × 2√2)R45° – 2O/Cu(100)] by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Our results confirm the (4√2 × 5√2)R45° superstructure of PTCDA/Cu(100) reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770–11779]. However, contrary to Schmidt et al., we have no indication for a dissoc...

  4. Practical and Incremental Maintenance of Software Resources in Consumer Electronics Products

    OpenAIRE

    Aizawa, K.; Kaiya, H; Kaijiri, K

    2005-01-01

    We introduce a method, so called FC method, for maintaining software resources, such as source codes and design documents, in consumer electronics products. Because a consumer electronics product is frequently and rapidly revised, software components in such product are also revised in the same way. However, it is not so easy for software engineers to follow the revision of the product because requirements changes for the product, including the changes of its functionalities and its hardware ...

  5. Elektronik Bilgi Kaynaklarının Seçimi / Selection of Electronic Information Resources

    Directory of Open Access Journals (Sweden)

    Pınar Al

    2003-04-01

    Full Text Available For many years, library users have used only from the printed media in order to get the information that they have needed. Today with the widespread use of the Web and the addition of electronic information resources to library collections, the use of information in the electronic environment as well as in printed media is started to be used. In time, such types of information resources as, electronic journals, electronic books, electronic encyclopedias, electronic dictionaries and electronic theses have been added to library collections. In this study, selection criteria that can be used for electronic information resources are discussed and suggestions are provided for libraries that try to select electronic information resources for their collections.

  6. Quantum noise in ac-driven resonant-tunneling double barrier structures: Photon-assisted tunneling vs. electron anti-bunching

    OpenAIRE

    Hammer, Jan; Belzig, Wolfgang

    2011-01-01

    We study the quantum noise of the electronic current in a double-barrier system with a single resonant level. In the framework of the Landauer formalism, we treat the double barrier as a quantum coherent scattering region that can exchange photons with a coupled electric field, e.g., a laser beam or a periodic ac bias voltage. As a consequence of the manifold parameters that are involved in this system, a complicated steplike structure arises in the nonsymmetrized current-current autocorrelat...

  7. Cost-Benefit Analysis of Electronic Information Resources: An Evaluation of the Middle East Technical University Library

    OpenAIRE

    Batı, Hacer

    2006-01-01

    In recent years there has been a rapid transition from print to electronic resources. Significant amount of library budgets are allocated for licensing electronic resources. Identifying and analyzing the benefits and costs of this new trend is therefore important for academic libraries. In this presentation experiences of METU (Middle East Technical University) Library on licensing and usage of electronic resources is evaluated by providing a cost-benefit analysis based on the cost and ...

  8. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  9. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  10. The Acquisition and Management of Electronic Resources: Can Use Justify Cost?

    Science.gov (United States)

    Koehn, Shona L.; Hawamdeh, Suliman

    2010-01-01

    As library collections increasingly become digital, libraries are faced with many challenges regarding the acquisition and management of electronic resources. Some of these challenges include copyright and fair use, the first-sale doctrine, licensing versus ownership, digital preservation, long-term archiving, and, most important, the issue of…

  11. Use of Electronic Information Resources among Research Scholars in the Islamia University of Bahawalpur, Pakistan

    Science.gov (United States)

    Amjad, Anam; Ahmed, Shamshad; Bin Naeem, Salman

    2013-01-01

    This study examined the use of electronic resources among academic scholars of The Islamia University of Bahawalpur (IUB), Punjab, Pakistan. A quantitative survey was found most convenient and useful for this study. The total population of the study was 169 research students in IUB. The response rate was 79% and 133 utilizable responses were coded…

  12. Implementation of an Electronic Resource Assessment System in an Academic Library

    Science.gov (United States)

    Xu, Fei

    2010-01-01

    Purpose: The purpose of this paper is to provide a library with useful information about selection criteria for an electronic resource assessment system and practical assistance on how to implement efficiently such a system. Design/methodology/approach: The paper is based on literature review, desk research, and implementation experience.…

  13. 电子资源的编目策略%Cataloging Strategies of Electronic Resources

    Institute of Scientific and Technical Information of China (English)

    王亚林

    2012-01-01

    Compared with traditional paper resources, electronic resources have following characteristics which determine different cataloging strategies from paper resources. These characteristics are huge quantity, updating rapidly, coexistence of a variety of manifestations. The source data of electronic resources is usually provided by the database agent. The cataloging of electronic resources is based on the Chapter IX of Anglo-American Cataloging Rules, Library of Congress Rule Interpretations and rules of Cooperative Online Serials. There are two major cataloging methods for electronic resources abroad, they are single record approach and separate record approach. Peking University Library chooses the latter method and batches cataloging automatically using the source data.%电子资源吲传统纸质资源相比,具有数量大、更新快、多种载体表现并行等特点,且大部分出版机构能够提供数据源数据。这些特点决定了.电子资源应采取与纸质文献不同的编目策略。电子资源编日的主要依据是《英美编日条例》的第9章、美国《国会图书馆条例解释》及全美期刊合作编目计划的规定。对于电子资源的编目,国外有单一记录编目法和分散记录编目法。北京大学图书馆采用后者,同时利用数据源数据批舒自动编目。

  14. Programmable ferroelectric tunnel memristor

    OpenAIRE

    Andy eQuindeau; Dietrich eHesse; Marin eAlexe

    2014-01-01

    We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us...

  15. Tunneling Ionization of Diatomic Molecules

    DEFF Research Database (Denmark)

    Svensmark, Jens Søren Sieg

    2016-01-01

    When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

  16. Tunneling Ionization Time Resolved by Backpropagation

    Science.gov (United States)

    Ni, Hongcheng; Saalmann, Ulf; Rost, Jan-Michael

    2016-07-01

    We determine the ionization time in tunneling ionization by an elliptically polarized light pulse relative to its maximum. This is achieved by a full quantum propagation of the electron wave function forward in time, followed by a classical backpropagation to identify tunneling parameters, in particular, the fraction of electrons that has tunneled out. We find that the ionization time is close to zero for single active electrons in helium and in hydrogen if the fraction of tunneled electrons is large. We expect our analysis to be essential to quantify ionization times for correlated electron motion.

  17. The role of electronic and ionic conductivities in the rate performance of tunnel structured manganese oxides in Li-ion batteries

    Science.gov (United States)

    Byles, B. W.; Palapati, N. K. R.; Subramanian, A.; Pomerantseva, E.

    2016-04-01

    Single nanowires of two manganese oxide polymorphs (α-MnO2 and todorokite manganese oxide), which display a controlled size variation in terms of their square structural tunnels, were isolated onto nanofabricated platforms using dielectrophoresis. This platform allowed for the measurement of the electronic conductivity of these manganese oxides, which was found to be higher in α-MnO2 as compared to that of the todorokite phase by a factor of ˜46. Despite this observation of substantially higher electronic conductivity in α-MnO2, the todorokite manganese oxide exhibited better electrochemical rate performance as a Li-ion battery cathode. The relationship between this electrochemical performance, the electronic conductivities of the manganese oxides, and their reported ionic conductivities is discussed for the first time, clearly revealing that the rate performance of these materials is limited by their Li+ diffusivity, and not by their electronic conductivity. This result reveals important new insights relevant for improving the power density of manganese oxides, which have shown promise as a low-cost, abundant, and safe alternative for next-generation cathode materials. Furthermore, the presented experimental approach is suitable for assessing a broader family of one-dimensional electrode active materials (in terms of their electronic and ionic conductivities) for both Li-ion batteries and for electrochemical systems utilizing charge-carrying ions beyond Li+.

  18. The role of electronic and ionic conductivities in the rate performance of tunnel structured manganese oxides in Li-ion batteries

    Directory of Open Access Journals (Sweden)

    B. W. Byles

    2016-04-01

    Full Text Available Single nanowires of two manganese oxide polymorphs (α-MnO2 and todorokite manganese oxide, which display a controlled size variation in terms of their square structural tunnels, were isolated onto nanofabricated platforms using dielectrophoresis. This platform allowed for the measurement of the electronic conductivity of these manganese oxides, which was found to be higher in α-MnO2 as compared to that of the todorokite phase by a factor of ∼46. Despite this observation of substantially higher electronic conductivity in α-MnO2, the todorokite manganese oxide exhibited better electrochemical rate performance as a Li-ion battery cathode. The relationship between this electrochemical performance, the electronic conductivities of the manganese oxides, and their reported ionic conductivities is discussed for the first time, clearly revealing that the rate performance of these materials is limited by their Li+ diffusivity, and not by their electronic conductivity. This result reveals important new insights relevant for improving the power density of manganese oxides, which have shown promise as a low-cost, abundant, and safe alternative for next-generation cathode materials. Furthermore, the presented experimental approach is suitable for assessing a broader family of one-dimensional electrode active materials (in terms of their electronic and ionic conductivities for both Li-ion batteries and for electrochemical systems utilizing charge-carrying ions beyond Li+.

  19. Library Electronic Resource Sharing Among Liberal Arts Colleges: ACS Palladian Alliance Project

    Directory of Open Access Journals (Sweden)

    Wenxian Zhang

    1997-03-01

    Full Text Available 無Effective electronic resource sharing is critical to library information services of the 1990s. Explosion of data and increased cost of information force libraries to work together, and technological advancements present the library service profession a platform for resource sharing. The Palladian Alliance Project of the Associated Colleges of the South is designed to provides ACS member institutions an effective means to enhance information access for their faculty and students, and achieve significant cost containment in the years to come.

  20. Some Cataloging Or Real Cataloging !? Cataloging Remotely Accessed Electronic Resources : A viewpoint for Discussion

    Directory of Open Access Journals (Sweden)

    Hesham Tolaib

    2004-06-01

    Full Text Available This paper presents a viewpoint about cataloging Remotely Accessed Electronic Resources , Starting with revealing a professional personal experience , then it deals briefly with the field scene discussing some of its solutions , suggestions , and sub-issues of the main issue . The paper critically treats AACR2 and its adaptation for cataloging those resources , especially 2002 Revision . Ending with presenting a new vision about the adaptations needed to solve the issue , exploring types of adaptations and its areas , it proposes a dichotomy for the code . Finally it presents a preliminary frame to implement such a vision .

  1. Superconducting electron tunneling as detection method for low frequency resonant vibration modes of interstitials in fcc lead

    International Nuclear Information System (INIS)

    The influence of crystal defects on the phonon spectra was studied for fcc lead using superconducting tunneling spectroscopy. The theory predicts low frequency modes for the vibrational states of interstitials in (100) dumbbell configuration. Low temperature irradiation of superconducting point contacts with fast ions (point contact thickness small compared to the average ion range) showed radiation-induced structures in the low-energy part of the Eliashberg function for lead. These resonant modes are reduced by annealing at 18.5 K; they are attributed to small interstitial clusters. The radiation-induced structures are completely removed by room temperature annealing. (orig.)

  2. Bias dependence of tunneling-electron-induced molecular fluorescence from porphyrin films on noble-metal substrates

    OpenAIRE

    Liu, H.W.; Le, Y.; Nishitani, Ryusuke; Aso, Y; Iwasaki, H.

    2007-01-01

    We investigated scanning tunneling microscope (STM)-excited luminescence from porphyrin (PhTPP and H2TPP) thin films on metal substrate (Au and Ag) under ambient conditions. Molecular fluorescence similar to the corresponding photoluminescence was observed from PhTPP/Au and H2TPP/Ag at both STM bias polarities. We found that at the same experimental condition and parameters, the STM-induced luminescence intensities of maxima peak are similar for PhTPP and H2TPP but weaker by a factor of about...

  3. Exploring the Tilt-Angle Dependence of electron tunneling across Molecular junction of Self-Assembled Alkanethiols

    DEFF Research Database (Denmark)

    Frederiksen, Thomas; Munuera, C.; Ocal, C.;

    2009-01-01

    by contacting the molecular layers with the tip of a conductive force microscope. Measurements done under low-load conditions permit us to obtain reliable tilt-angle and molecular length dependencies of the low-bias conductance through the alkanethiol layers. The observed dependence on tilt-angle is stronger...... for the longer molecular chains. Our calculations confirm the observed trends and explain them as a result of two mechanisms, namely, a previously proposed intermolecular tunneling enhancement as well as a hitherto overlooked tilt-dependent molecular gate effect....

  4. Proton-Coupled Electron Transfer in a Series of Ruthenium-Linked Tyrosines with Internal Bases: Evaluation of a Tunneling Model for Experimental Temperature-Dependent Kinetics.

    Science.gov (United States)

    Markle, Todd F; Zhang, Ming-Tian; Santoni, Marie-Pierre; Johannissen, Linus O; Hammarström, Leif

    2016-09-01

    Photoinitiated proton-coupled electron transfer (PCET) kinetics has been investigated in a series of four modified tyrosines linked to a ruthenium photosensitizer in acetonitrile, with each tyrosine bearing an internal hydrogen bond to a covalently linked pyridine or benzimidazole base. After correcting for differences in driving force, it is found that the intrinsic PCET rate constant still varies by 2 orders of magnitude. The differences in rates, as well as the magnitude of the kinetic isotope effect (KIE = kH/kD), both generally correlate with DFT calculated proton donor-acceptor distances. An Arrhenius analysis of temperature dependent data shows that the difference in reactivity arises primarily from differences in activation energies. We use this kinetic data to evaluate a commonly employed theoretical model for proton tunneling which includes a harmonic distribution of proton donor-acceptor distances due to vibrational motions of the molecule. Applying this model to the experimental data yields the conclusion that donor-acceptor compression is more facile in the compounds with shorter PT distance; however, this is contrary to independent calculations for the same compounds. This discrepancy is likely because the assumption in the model of Morse-shaped proton potential energy surfaces is inappropriate for (strongly) hydrogen-bonded systems. These results question the general applicability of this model. The results also suggest that a correlation of rate vs proton tunneling distance for the series of compounds is complicated by a concomitant variation of other relevant parameters. PMID:27490689

  5. Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    YANG Fan; BI Xiao-fang

    2006-01-01

    The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The magnetic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.

  6. Electron-tunneling study of superconductors doped with magnetic atoms and nonmagnetic resonant-state atoms: indium-chromium, zinc-manganese, and aluminum-manganese

    International Nuclear Information System (INIS)

    We have used electron-tunneling measurements to determine the density of states of quench-condensed thin films of In-Cr, Zn-Mn, and Al-Mn, and of annealed thin films of Zn-Mn. The results on In-Cr and Zn-Mn were compared with Shiba's theory for magentic atoms in superconductors. We observed the localized band of states predicted to form in the energy gap of such alloys, though the observed band was broader than that predicted. The annealed samples of Zn-Mn showed a narrower band than did the quench-condensed samples. Reasonable agreement with Shiba's theory was found if s, p, and d wave scattering were included. The results on Al-Mn were compared with Salomaa and Nieminen's theory for nonmagnetic resonant-state atoms in superconductors. The predicted band of states was not observed. Our measurements indicate that Mn in quench-condensed Al is nonmagnetic. Any resonant states which do exist in the superconducting alloy are too broad to be seen in our tunneling measurement

  7. Tunnel electroresistance through organic ferroelectrics

    Science.gov (United States)

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-05-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

  8. Insights into electron tunneling across hydrogen-bonded base-pairs in complete molecular circuits for single-stranded DNA sequencing

    Science.gov (United States)

    Lee, Myeong H.; Sankey, Otto F.

    2009-01-01

    We report a first-principles study of electron ballistic transport through a molecular junction containing deoxycytidine-monophosphate (dCMP) connected to metal electrodes. A guanidinium ion and guanine nucleobase are tethered to gold electrodes on opposite sides to form hydrogen bonds with the dCMP molecule providing an electric circuit. The circuit mimics a component of a potential device for sequencing unmodified single-stranded DNA. The molecular conductance is obtained from DFT Green's function scattering methods and is compared to estimates from the electron tunneling decay constant obtained from the complex band structure. The result is that a complete molecular dCMP circuit of 'linker((CH2)2)-guanidinium-phosphate-deoxyribose-cytosine-guanine' has a very low conductance (of the order of fS) while the hydrogen-bonded guanine-cytosine base-pair has a moderate conductance (of the order of tens to hundreds of nS). Thus, while the transverse electron transfer through base-pairing is moderately conductive, electron transfer through a complete molecular dCMP circuit is not. The gold Fermi level is found to be aligned very close to the HOMO for both the guanine-cytosine base-pair and the complete molecular dCMP circuit. Results for two different plausible geometries of the hydrogen-bonded dCMP molecule reveal that the conductance varies from fS for an extended structure to pS for a slightly compressed structure.

  9. Electronic Human Resource Management (e-HRM) of Hotel Business in Phuket

    OpenAIRE

    Kitimaporn Choochote; Kitsiri Chochiang

    2015-01-01

    This research aims to study the pattern of the electronic human resources management (e-HRM) of the hotel business in Phuket. The study is conducted with the implementation of field data and in-depth interview of hotels’ HR managers. In consequence, the study reveals that the hotel business has applied the use of the e-HRM varying in job recruitment (15 percent), employee engagement (55 percent), organizational file structure (10 percent), idea and creativity exchanges (38 percent) and assess...

  10. Use and Cost of Electronic Resources in Central Library of Ferdowsi University Based on E-metrics

    OpenAIRE

    Mohammad Reza Davarpanah; Nayereh Dadkhah

    2012-01-01

    The purpose of this study was to investigate the usage of electronic journals in Ferdowsi University, Iran based on e-metrics. The paper also aimed to emphasize the analysis of cost-benefit and the correlation between the journal impact factors and the usage data. In this study experiences of Ferdowsi University library on licensing and usage of electronic resources was evaluated by providing a cost-benefit analysis based on the cost and usage statistics of electronic resources. Vendor-provid...

  11. Measurement and Modeling of Single Electron tunneling to Interface States in SiO^2 and HfO^2 Detected by Electrostatic Force

    Science.gov (United States)

    Bussmann, Ezra; Kim, Dong Jun; Armstrong, Bob; Williams, Clayton C.

    2004-03-01

    An Electrostatic Force Microscope in ultra-high vacuum is used to detect the resonant frequency shift of a cantilever probe as it approaches a silicon sample with an insulating oxide surface layer (SiO^2, HfO^2). When the oscillating probe is moved into the nanometer range of the oxide surface, discontinuous steps appear in the otherwise smooth frequency-distance curve. The discontinuities are abrupt changes in the electrostatic force gradient caused by movement of charge in the oxide. An electrostatic model of the probe/sample system has been constructed to determine the amount and location of the moving charge. Comparison of the model to the frequency shifts (few Hz) observed on samples with varied oxide thickness and composition reveals that the shifts are most likely caused by tunneling of single electrons to interface states in the oxide. The measurements and modeling will be described and compared.

  12. Fowler-Nordheim tunneling and conduction-band discontinuity in GaAs/GaAsAl high electron mobility transistor structures

    Science.gov (United States)

    Smoliner, J.; Christanell, R.; Hauser, M.; Gornik, E.; Weimann, G.

    1987-06-01

    Oscillatory structure is observed in the dI/dV characteristics of conventional GaAs/GaAlAs high electron mobility transistor samples at liquid-helium temperature, which can be explained using a Fowler-Nordheim tunneling theory. The position of the oscillations allows a determination of the conduction-band discontinuity, and the depth of the deep donor levels in the GaAlAs for high aluminum concentrations. The fit of the data gives a value of Delta Ec/Delta Eg = 0.61 + or - 0.04 for aluminum concentration 30, 36, and 40 percent. The deep donor level in the GaAlAs was determined to be 130 meV below the conduction band.

  13. Equipment concept design and development plans for microgravity science and applications research on space station: Combustion tunnel, laser diagnostic system, advanced modular furnace, integrated electronics laboratory

    Science.gov (United States)

    Uhran, M. L.; Youngblood, W. W.; Georgekutty, T.; Fiske, M. R.; Wear, W. O.

    1986-01-01

    Taking advantage of the microgravity environment of space NASA has initiated the preliminary design of a permanently manned space station that will support technological advances in process science and stimulate the development of new and improved materials having applications across the commercial spectrum. Previous studies have been performed to define from the researcher's perspective, the requirements for laboratory equipment to accommodate microgravity experiments on the space station. Functional requirements for the identified experimental apparatus and support equipment were determined. From these hardware requirements, several items were selected for concept designs and subsequent formulation of development plans. This report documents the concept designs and development plans for two items of experiment apparatus - the Combustion Tunnel and the Advanced Modular Furnace, and two items of support equipment the Laser Diagnostic System and the Integrated Electronics Laboratory. For each concept design, key technology developments were identified that are required to enable or enhance the development of the respective hardware.

  14. Potential resource and toxicity impacts from metals in waste electronic devices.

    Science.gov (United States)

    Woo, Seung H; Lee, Dae Sung; Lim, Seong-Rin

    2016-04-01

    As a result of the continuous release of new electronic devices, existing electronic devices are quickly made obsolete and rapidly become electronic waste (e-waste). Because e-waste contains a variety of metals, information about those metals with the potential for substantial environmental impact should be provided to manufacturers, recyclers, and disposers to proactively reduce this impact. This study assesses the resource and toxicity (i.e., cancer, noncancer, and ecotoxicity) potentials of various heavy metals commonly found in e-waste from laptop computers, liquid-crystal display (LCD) monitors, LCD TVs, plasma TVs, color cathode ray tube (CRT) TVs, and cell phones and then evaluates such potentials using life cycle impact-based methods. Resource potentials derive primarily from Cu, Sb, Ag, and Pb. Toxicity potentials derive primarily from Pb, Ni, and Hg for cancer toxicity; from Pb, Hg, Zn, and As for noncancer toxicity; and from Cu, Pb, Hg, and Zn for ecotoxicity. Therefore, managing these heavy metals should be a high priority in the design, recycling, and disposal stages of electronic devices. PMID:27017840

  15. Tunneling Through Black Rings

    Institute of Scientific and Technical Information of China (English)

    ZHAO Liu

    2007-01-01

    Hawking radiation of black ring solutions to 5-dimensional Einstein-Maxwell-dilaton theory is analyzed by use of the Parikh-Wilczek tunneling method. To get the correct tunneling amplitude and emission rate, we adopt and develop the Angheben-Nadalini-Vanzo-Zerbini covariant approach to cover the effects of rotation and electronic discharge all at once, and the effect of back reaction is also taken into account. This constitutes a unified approach to the tunneling problem. Provided the first law of thermodynamics for black rings holds, the emission rate is proportional to the exponential of the change of Bekenstein-Hawking entropy. Explicit calculation for black ring temperatures agrees exactly with the results obtained via the classical surface gravity method and the quasi-local formalism.

  16. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.;

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  17. Review of material recovery from used electric and electronic equipment-alternative options for resource conservation.

    Science.gov (United States)

    Friege, Henning

    2012-09-01

    For waste from electric and electronic equipment, the WEEE Directive stipulates the separate collection of electric and electronic waste. As to new electric and electronic devices, the Restriction of Hazardous Substances (RoHS) Directive bans the use of certain chemicals dangerous for man and environment. From the implementation of the WEEE directive, many unsolved problems have been documented: poor collection success, emission of dangerous substances during collection and recycling, irretrievable loss of valuable metals among others. As to RoHS, data from the literature show a satisfying success. The problems identified in the process can be reduced to some basic dilemmas at the borders between waste management, product policy and chemical safety. The objectives of the WEEE Directive and the specific targets for use and recycling of appliances are not consistent. There is no focus on scarce resources. Extended producer responsibility is not sufficient to guarantee sustainable waste management. Waste management reaches its limits due to problems of implementation but also due to physical laws. A holistic approach is necessary looking at all branch points and sinks in the stream of used products and waste from electric and electronic equipment. This may be done with respect to the general rules for sustainable management of material streams covering the three dimensions of sustainable policy. The relationships between the players in the field of electric and electronic devices have to be taken into account. Most of the problems identified in the implementation process will not be solved by the current amendment of the WEEE Directive.

  18. Tunneling into high-Tc superconductors: methods of fabricating tunnel junctions

    International Nuclear Information System (INIS)

    In the preprint we shell review some experimental results on electron tunneling into high-Tc superconductors. Pros and cons of various methods of fabricating the tunnel junctions with metal oxide compound as a base electrode are discussed. The data obtained by different groups are examined in terms of the tunneling criterion. 66 refs.; 13 figs

  19. RESONANT ZENER TUNNELING OF ELECTRONS ACROSS THE BAND-GAP BETWEEN BOUND STATES IN THE VALENCE- AND CONDUCTION-BAND QUANTUM WELLS IN A MULTIPLE QUANTUM-WELL STRUCTURE

    OpenAIRE

    Allam, J.; Beltram, F.; Capasso, F; Cho, A.

    1987-01-01

    We report the observation of resonant tunneling effects at high applied fields in a multiple quantum-well P-I-N diode. The Al0.48In0.52As/Ga0.47In0.53As structure shows features in the dark current due to Zener tunneling of electrons from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.

  20. Phonon-electron coupling and tunneling effect on charge transport in organic semi-conductor crystals of Cn-BTBT.

    Science.gov (United States)

    Zhou, Yecheng; Deng, Wei-Qiao; Zhang, Hao-Li

    2016-09-14

    Cn-[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) crystals show very high hole mobilities in experiments. These high mobilities are beyond existing theory prediction. Here, we employed different quantum chemistry methods to investigate charge transfer in Cn-BTBT crystals and tried to find out the reasons for the underestimation in the theory. It was found that the hopping rate estimated by the Fermi Golden Rule is higher than that of the Marcus theory due to the high temperature approximation and failure at the classic limit. More importantly, molecular dynamics simulations revealed that the phonon induced fluctuation of electronic transfer integral is much larger than the average of the electronic transfer integral itself. Mobilities become higher if simulations implement the phonon-electron coupling. This conclusion indicates that the phonon-electron coupling promotes charge transfer in organic semi-conductors at room temperature. PMID:27634252

  1. Immobilization, hybridization, and oxidation of synthetic DNA on gold surface: electron transfer investigated by electrochemistry and scanning tunneling microscopy

    OpenAIRE

    McEwen, Gerald D.; Chen, Fan; Zhou, Anhong

    2009-01-01

    Fundamental understanding of interfacial electron transfer (ET) among electrolyte/DNA/solid-surface will facilitate the design for electrical detection of DNA molecules. In this report, the electron transfer characteristics of synthetic DNA (sequence from pathogenic Cryptosporidium parvum) self-assembled on a gold surface was electrochemically studied. The effects of immobilization order on the interface ET related parameters such as diffusion coefficient (D0), surface coverage (θR), and mono...

  2. Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloys as magnetic electrodes

    Science.gov (United States)

    Belmeguenai, M.; Genevois, C.; Zighem, F.; Roussigné, Y.; Chérif, S. M.; Westerholt, K.; El Bahoui, A.; Fnidiki, A.; Moch, P.

    2014-01-01

    HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for concluding that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film.

  3. Mn Doping Effects on the Electronic Band Structure of PbS Quantum Dot Thin Films: A Scanning Tunneling Microscopy Analysis

    Science.gov (United States)

    Yost, Andrew J.; Rimal, Gaurab; Tang, Jinke; Chien, Teyu

    A thorough understanding of the phenomena associated with doping of transition metals in semiconductors is important for the development of semiconducting electronic technologies such as semiconducting quantum dot sensitized solar cells (QDSSC). Manganese doping is of particular interest in a PbS QD as it is potentially capable of increasing overall QDSSC performance. Here we present scanning tunneling microscopy and spectroscopy studies about the effects of Manganese doping on the energy band structures of PbS semiconducting QD thin films, grown using pulsed laser deposition. As a result of Manganese doping in the PbS QD thin films, a widening of the electronic band gap was observed, which is responsible for the observed increase in resistivity. Furthermore, a loss of long range periodicity observed by XRD, upon incorporation of Manganese, indicates that the Manganese dopants also induce a large amount of grain boundaries. This work was supported by the following: U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering, DEFG02-10ER46728 and the National Science Foundation Grant #0948027.

  4. Assessment of accepting rate of Electronic Information Resources (EIR) by Iranian Knowledge and Information Science faculty members

    OpenAIRE

    Afshin Hamdipour; Zahed Bigdeli

    2014-01-01

    Electronic information resources (EIR) play an important role in the process of education and research. The aim of this study was to analyze the status of adoption of electronic information resources (EIR) by Iranian Knowledge and Information Science (KIS) faculty members. This applied- descriptive survey was carried out on Iranian KIS Faculty Members in 2012. The number of participants was determined based on the Cochran's sample size table. Of the 170 Faculty Members, 122 individuals were r...

  5. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.

    Science.gov (United States)

    Gruverman, A; Wu, D; Lu, H; Wang, Y; Jang, H W; Folkman, C M; Zhuravlev, M Ye; Felker, D; Rzchowski, M; Eom, C-B; Tsymbal, E Y

    2009-10-01

    Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices. PMID:19697939

  6. Assessment of accepting rate of Electronic Information Resources (EIR by Iranian Knowledge and Information Science faculty members

    Directory of Open Access Journals (Sweden)

    Afshin Hamdipour

    2014-12-01

    Full Text Available Electronic information resources (EIR play an important role in the process of education and research. The aim of this study was to analyze the status of adoption of electronic information resources (EIR by Iranian Knowledge and Information Science (KIS faculty members. This applied- descriptive survey was carried out on Iranian KIS Faculty Members in 2012. The number of participants was determined based on the Cochran's sample size table. Of the 170 Faculty Members, 122 individuals were randomly selected. Data collection tool was an Electronic questionnaire, and its validity was confirmed by professionals. The reliability of the questionnaire was verified after a pilot study. By using IBM SPSS 20 software and through exploratory factor analysis, descriptive statistics, and inferential tests the data were analyzed. Results showed that, there is significant difference between the mean of adoption rate of electronic information resources (EIR by people with different levels of education. In addition, the Pearson correlation coefficient showed a significant relationship between mean of adoption rate and the faculty’s teaching experience and age. The results of Kolmogorov-Smirnoff test showed that the curve of adoption rate of electronic information resources among the sample is normal, and thus, the adoption rate of resources over time, is S-shaped. Ultimately, this study confirmed The Rogers’ Diffusion of Innovation Theory (2003 in context of Adaptor categories of electronic information resources (EIR, and S-shaped curve, among faculty members in departments of knowledge and Information science in Iran.

  7. The level of the usage of the human resource information system and electronic recruitment in Croatian companies

    OpenAIRE

    Snježana Pivac; Ivana Tadić; Branka Marasović

    2014-01-01

    Performing business according to contemporary requirements influences companies for continuous usage of modern managerial tools, such as a human resource information system (HRIS) and electronic recruitment (ER). Human resources have been recognised as curtail resources and the main source of a competitive advantage in creation of successful business performance. In order to attract and select the top employees, companies use quality information software for attracting internal ones, and elec...

  8. Electronic Transport in Single Molecule Junctions: Control of the Molecule-Electrode Coupling Through Intramolecular Tunneling Barriers

    DEFF Research Database (Denmark)

    Danilov, Andrey; Kubatkin, Sergey; Kafanov, Sergey;

    2008-01-01

    We report on single molecule electron transport measurements of two oligophenylenevinylene (OPV3) derivatives placed in a nanogap between gold (Au) or lead (Pb) electrodes in a field effect transistor device. Both derivatives contain thiol end groups that allow chemical binding to the electrodes....... One derivative has additional methylene groups separating the thiols from the delocalized -electron system. The insertion of methylene groups changes the open state conductance by 3-4 orders of magnitude and changes the transport mechanism from a coherent regime with finite zero-bias conductance...

  9. Quantum Tunnelling to the Origin and Evolution of Life

    OpenAIRE

    Trixler, Frank

    2013-01-01

    Quantum tunnelling is a phenomenon which becomes relevant at the nanoscale and below. It is a paradox from the classical point of view as it enables elementary particles and atoms to permeate an energetic barrier without the need for sufficient energy to overcome it. Tunnelling might seem to be an exotic process only important for special physical effects and applications such as the Tunnel Diode, Scanning Tunnelling Microscopy (electron tunnelling) or Near-field Optical Microscopy operating ...

  10. Coulomb Repulsion Effect in Two-electron Non-adiabatic Tunneling through a One-level redox Molecule

    DEFF Research Database (Denmark)

    Medvedev, Igor M.; Kuznetsov, Alexander M.; Ulstrup, Jens

    2009-01-01

    . It is shown that depending on the effective Coulomb repulsion energy, the current/overpotential relation at fixed bias voltage shows two narrow (~kBT) peaks in the limit of strong electron-phonon coupling to the solvent environment. The system also displays current/bias voltage rectification. The differential...

  11. Programmable ferroelectric tunnel memristor

    Directory of Open Access Journals (Sweden)

    Andy eQuindeau

    2014-02-01

    Full Text Available We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8]O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

  12. Review of material recovery from used electric and electronic equipment-alternative options for resource conservation.

    Science.gov (United States)

    Friege, Henning

    2012-09-01

    For waste from electric and electronic equipment, the WEEE Directive stipulates the separate collection of electric and electronic waste. As to new electric and electronic devices, the Restriction of Hazardous Substances (RoHS) Directive bans the use of certain chemicals dangerous for man and environment. From the implementation of the WEEE directive, many unsolved problems have been documented: poor collection success, emission of dangerous substances during collection and recycling, irretrievable loss of valuable metals among others. As to RoHS, data from the literature show a satisfying success. The problems identified in the process can be reduced to some basic dilemmas at the borders between waste management, product policy and chemical safety. The objectives of the WEEE Directive and the specific targets for use and recycling of appliances are not consistent. There is no focus on scarce resources. Extended producer responsibility is not sufficient to guarantee sustainable waste management. Waste management reaches its limits due to problems of implementation but also due to physical laws. A holistic approach is necessary looking at all branch points and sinks in the stream of used products and waste from electric and electronic equipment. This may be done with respect to the general rules for sustainable management of material streams covering the three dimensions of sustainable policy. The relationships between the players in the field of electric and electronic devices have to be taken into account. Most of the problems identified in the implementation process will not be solved by the current amendment of the WEEE Directive. PMID:22993131

  13. Strong Overtones Modes in Inelastic Electron Tunneling Spectroscopy with Cross-Conjugated Molecules: A Prediction from Theory

    OpenAIRE

    Lykkebo, Jacob; Gagliardi, Alessio; Pecchia, Alessandro; Gemma C. Solomon

    2013-01-01

    Cross-conjugated molecules are known to exhibit destructive quantum interference, a property that has recently received considerable attention in single-molecule electronics. Destructive quantum interference can be understood as an antiresonance in the elastic transmission near the Fermi energy and leading to suppressed levels of elastic current. In most theoretical studies, only the elastic contributions to the current are taken into account. In this paper, we study the inelastic contributio...

  14. Immobilization, hybridization, and oxidation of synthetic DNA on gold surface: Electron transfer investigated by electrochemistry and scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    McEwen, Gerald D.; Chen Fan [Biological Engineering Program, Department of Biological and Irrigation Engineering, Utah State University, 4105 Old Main Hill, Logan, UT 84322-4105 (United States); Zhou Anhong, E-mail: Anhong.Zhou@usu.edu [Biological Engineering Program, Department of Biological and Irrigation Engineering, Utah State University, 4105 Old Main Hill, Logan, UT 84322-4105 (United States)

    2009-06-08

    Fundamental understanding of interfacial electron transfer (ET) among electrolyte/DNA/solid-surface will facilitate the design for electrical detection of DNA molecules. In this report, the electron transfer characteristics of synthetic DNA (sequence from pathogenic Cryptosporidium parvum) self-assembled on a gold surface was electrochemically studied. The effects of immobilization order on the interface ET related parameters such as diffusion coefficient (D{sub 0}), surface coverage ({theta}{sub R}), and monolayer thickness (d{sub i}) were determined by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). DNA surface density ({Gamma}{sub DNA}) was determined by the integration of the charge of the electro-oxidation current peaks during the initial cyclic voltammetry scans. It was found that the DNA surface densities at different modifications followed the order: {Gamma}{sub DNA} (dsS-DNA/Au) > {Gamma}{sub DNA} (MCH/dsS-DNA/Au) > {Gamma}{sub DNA} (dsS-DNA/MCH/Au). It was also revealed that the electro-oxidation of the DNA modified gold surface would involve the oxidation of nucleotides (guanine and adenine) with a 5.51 electron transfer mechanism and the oxidative desorption of DNA and MCH molecules by a 3 electron transfer mechanism. STM topography and current image analysis indicated that the surface conductivity after each surface modification followed the order: dsS-DNA/Au < MCH/dsS-DNA/Au < oxidized MCH/dsS-DNA/Au < Hoechst/oxidized MCH/dsS-DNA/Au. The results from this study suggested a combination of variations in immobilization order may provide an alternative approach for the optimization of DNA hybridization and the further development for electrical detection of DNA.

  15. A preliminary categorization of end-of-life electrical and electronic equipment as secondary metal resources.

    Science.gov (United States)

    Oguchi, Masahiro; Murakami, Shinsuke; Sakanakura, Hirofumi; Kida, Akiko; Kameya, Takashi

    2011-01-01

    End-of-life electrical and electronic equipment (EEE) has recently received attention as a secondary source of metals. This study examined characteristics of end-of-life EEE as secondary metal resources to consider efficient collection and metal recovery systems according to the specific metals and types of EEE. We constructed an analogy between natural resource development and metal recovery from end-of-life EEE and found that metal content and total annual amount of metal contained in each type of end-of-life EEE should be considered in secondary resource development, as well as the collectability of the end-of-life products. We then categorized 21 EEE types into five groups and discussed their potential as secondary metal resources. Refrigerators, washing machines, air conditioners, and CRT TVs were evaluated as the most important sources of common metals, and personal computers, mobile phones, and video games were evaluated as the most important sources of precious metals. Several types of small digital equipment were also identified as important sources of precious metals; however, mid-size information and communication technology (ICT) equipment (e.g., printers and fax machines) and audio/video equipment were shown to be more important as a source of a variety of less common metals. The physical collectability of each type of EEE was roughly characterized by unit size and number of end-of-life products generated annually. Current collection systems in Japan were examined and potentially appropriate collection methods were suggested for equipment types that currently have no specific collection systems in Japan, particularly for video games, notebook computers, and mid-size ICT and audio/video equipment.

  16. Ferroelectric tunnel memristor.

    Science.gov (United States)

    Kim, D J; Lu, H; Ryu, S; Bark, C-W; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-11-14

    Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height. PMID:23039785

  17. Electron acceptor molecules deposited on epitaxial graphene studied by means of low temperature scanning tunneling microscopy/spectroscopy

    OpenAIRE

    Garnica Alonso, Manuela

    2013-01-01

    Tesis doctoral inédita leída en la Universidad Autónoma de Madrid, Facultad de Ciencias, Departamento de Física de la Materia Condensada. Fecha de lectura: 22-07-3013 En esta tesis se presenta el estudio de dos moléculas aceptoras de electrones bien conocidas, TCNQ y F4-TCNQ, sobre grafeno epitaxial. El crecimiento y caracterización de sus propiedades electrónicas y magnéticas se realizó mediante Microscopía y Espectroscopia Túnel de Barrido (STM/STS) en Ultra Alto Vacío y a baja ...

  18. Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100) surface investigated by scanning tunneling microscopy and low energy electron diffraction.

    Science.gov (United States)

    Gärtner, Stefan; Fiedler, Benjamin; Bauer, Oliver; Marele, Antonela; Sokolowski, Moritz M

    2014-01-01

    We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA) on the clean and on the oxygen pre-covered Cu(100) surface [referred to as (√2 × 2√2)R45° - 2O/Cu(100)] by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Our results confirm the (4√2 × 5√2)R45° superstructure of PTCDA/Cu(100) reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770-11779]. However, contrary to Schmidt et al., we have no indication for a dissociation of the PTCDA upon adsorption, and we propose a detailed structure model with two intact PTCDA molecules within the unit cell. Domains of high lateral order are obtained, if the deposition is performed at 400 K. For deposition at room temperature, a significant density of nucleation defects is found pointing to a strong interaction of PTCDA with Cu(100). Quite differently, after preadsorption of oxygen and formation of the (√2 × 2√2)R45° - 2O/Cu(100) superstructure on Cu(100), PTCDA forms an incommensurate monolayer with a structure that corresponds well to that of PTCDA bulk lattice planes. PMID:25246964

  19. Rotational tunneling of methyl groups and the electronic heat capacity of EtMe3Sb[Pd(dmit)2]2 under magnetic fields

    Science.gov (United States)

    Yamashita, Satoshi; Yoshizumi, Masayuki; Akutsu, Hiroki; Nakazawa, Yasuhiro

    2016-03-01

    In order to discuss the stability of the gapless features in the spin liquid state against magnetic fields, we report results and analyses of low-temperature heat capacity measurements of EtMe3Sb[Pd(dmit)2]2 under magnetic fields. The large upturn of CpT‑1 at 0 T observed previously in EtMe3Sb[Pd(dmit)2]2 can be attributed to the rotational tunneling of the methyl groups in the counter cations and this upturn is suppressed by applying magnetic fields. The phenomenological resemblance of the feature under magnetic field was confirmed by comparative discussion of heat capacity measurement of metal complex of [Cu(acac)(OCH3)]2 having similar methyl groups. The gapless character evidenced by the finite electronic heat capacity coefficient, γ was found to be retained upon applying 17 T in EtMe3Sb[Pd(dmit)2]2, which means that spin liquid ground state is stable against high magnetic fields. The finite γ in the spin liquid compounds is considered to be related to a kind of density of states in spin excitations rather than those determined by disorders such as spin glasses.

  20. Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100 surface investigated by scanning tunneling microscopy and low energy electron diffraction

    Directory of Open Access Journals (Sweden)

    Stefan Gärtner

    2014-09-01

    Full Text Available We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA on the clean and on the oxygen pre-covered Cu(100 surface [referred to as (√2 × 2√2R45° – 2O/Cu(100] by scanning tunneling microscopy (STM and low energy electron diffraction (LEED. Our results confirm the (4√2 × 5√2R45° superstructure of PTCDA/Cu(100 reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770–11779]. However, contrary to Schmidt et al., we have no indication for a dissociation of the PTCDA upon adsorption, and we propose a detailed structure model with two intact PTCDA molecules within the unit cell. Domains of high lateral order are obtained, if the deposition is performed at 400 K. For deposition at room temperature, a significant density of nucleation defects is found pointing to a strong interaction of PTCDA with Cu(100. Quite differently, after preadsorption of oxygen and formation of the (√2 × 2√2R45° – 2O/Cu(100 superstructure on Cu(100, PTCDA forms an incommensurate monolayer with a structure that corresponds well to that of PTCDA bulk lattice planes.

  1. The structures and dynamics of atomic and molecular adsorbates on metal surfaces by scanning tunneling microscopy and low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Hyungsuk Alexander

    1996-12-01

    Studies of surface structure and dynamics of atoms and molecules on metal surfaces are presented. My research has focused on understanding the nature of adsorbate-adsorbate and adsorbate-substrate interactions through surface studies of coverage dependency and coadsorption using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). The effect of adsorbate coverage on the surface structures of sulfur on Pt(111) and Rh(111) was examined. On Pt(111), sulfur forms p(2x2) at 0.25 ML of sulfur, which transforms into a more compressed ({radical}3x{radical}3)R30{degrees} at 0.33 ML. On both structures, it was found that sulfur adsorbs only in fcc sites. When the coverage of sulfur exceeds 0.33 ML, it formed more complex c({radical}3x7)rect structure with 3 sulfur atoms per unit cell. In this structure, two different adsorption sites for sulfur atoms were observed - two on fcc sites and one on hcp site within the unit cell.

  2. Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100) surface investigated by scanning tunneling microscopy and low energy electron diffraction.

    Science.gov (United States)

    Gärtner, Stefan; Fiedler, Benjamin; Bauer, Oliver; Marele, Antonela; Sokolowski, Moritz M

    2014-01-01

    We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA) on the clean and on the oxygen pre-covered Cu(100) surface [referred to as (√2 × 2√2)R45° - 2O/Cu(100)] by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Our results confirm the (4√2 × 5√2)R45° superstructure of PTCDA/Cu(100) reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770-11779]. However, contrary to Schmidt et al., we have no indication for a dissociation of the PTCDA upon adsorption, and we propose a detailed structure model with two intact PTCDA molecules within the unit cell. Domains of high lateral order are obtained, if the deposition is performed at 400 K. For deposition at room temperature, a significant density of nucleation defects is found pointing to a strong interaction of PTCDA with Cu(100). Quite differently, after preadsorption of oxygen and formation of the (√2 × 2√2)R45° - 2O/Cu(100) superstructure on Cu(100), PTCDA forms an incommensurate monolayer with a structure that corresponds well to that of PTCDA bulk lattice planes.

  3. Electronic Human Resource Management (e-HRM of Hotel Business in Phuket

    Directory of Open Access Journals (Sweden)

    Kitimaporn Choochote

    2015-04-01

    Full Text Available This research aims to study the pattern of the electronic human resources management (e-HRM of the hotel business in Phuket. The study is conducted with the implementation of field data and in-depth interview of hotels’ HR managers. In consequence, the study reveals that the hotel business has applied the use of the e-HRM varying in job recruitment (15 percent, employee engagement (55 percent, organizational file structure (10 percent, idea and creativity exchanges (38 percent and assessment system (6 percent. However, considered as 100 percent, the hotel business has not prepared to apply the use of the e-HRM in salary system, learning and training program, welfare allocation and career development.

  4. Medical Image Resource Center--making electronic teaching files from PACS.

    Science.gov (United States)

    Lim, C C Tchoyoson; Yang, Guo Liang; Nowinski, Wieslaw L; Hui, Francis

    2003-12-01

    A picture archive and communications system (PACS) is a rich source of images and data suitable for creating electronic teaching files (ETF). However, the potential for PACS to support nonclinical applications has not been fully realized: at present there is no mechanism for PACS to identify and store teaching files; neither is there a standardized method for sharing such teaching images. The Medical Image Resource Center (MIRC) is a new central image repository that defines standards for data exchange among different centers. We developed an ETF server that retrieves digital imaging and communication in medicine (DICOM) images from PACS, and enables users to create teaching files that conform to the new MIRC schema. We test-populated our ETF server with illustrative images from the clinical case load of the National Neuroscience Institute, Singapore. Together, PACS and MIRC have the potential to benefit radiology teaching and research.

  5. Resonant Tunneling in the Quantum Hydrodynamic Model

    OpenAIRE

    Carl L. Gardner

    1995-01-01

    The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR.Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore...

  6. The electronic encapsulation of knowledge in hydraulics, hydrology and water resources

    Science.gov (United States)

    Abbott, Michael B.

    The rapidly developing practice of encapsulating knowledge in electronic media is shown to lead necessarily to the restructuring of the knowledge itself. The consequences of this for hydraulics, hydrology and more general water-resources management are investigated in particular relation to current process-simulation, real-time control and advice-serving systems. The generic properties of the electronic knowledge encapsulator are described, and attention is drawn to the manner in which knowledge 'goes into hiding' through encapsulation. This property is traced in the simple situations of pure mathesis and in the more complex situations of taxinomia using one example each from hydraulics and hydrology. The consequences for systems architectures are explained, pointing to the need for multi-agent architectures for ecological modelling and for more general hydroinformatics systems also. The relevance of these developments is indicated by reference to ongoing projects in which they are currently being realised. In conclusion, some more general epistemological aspects are considered within the same context. As this contribution is so much concerned with the processes of signification and communication, it has been partly shaped by the theory of semiotics, as popularised by Eco ( A Theory of Semiotics, Indiana University, Bloomington, 1977).

  7. Andreev reflection and Klein tunneling in graphene

    OpenAIRE

    Beenakker, C. W. J.

    2007-01-01

    This is a colloquium-style introduction to two electronic processes in a carbon monolayer (graphene), each having an analogue in relativistic quantum mechanics. Both processes couple electron-like and hole-like states, through the action of either a superconducting pair potential or an electrostatic potential. The first process, Andreev reflection, is the electron-to-hole conversion at the interface with a superconductor. The second process, Klein tunneling, is the tunneling through a p-n jun...

  8. Inelastic scattering in resonant tunneling

    DEFF Research Database (Denmark)

    Wingreen, Ned S.; Jacobsen, Karsten Wedel; Wilkins, John W.

    1989-01-01

    The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability or the esc......The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability...

  9. Self-assembled monolayers of radical molecules physisorbed on HOPG(0 0 0 1) substrate studied by scanning tunnelling microscopy and electron paramagnetic resonance techniques

    International Nuclear Information System (INIS)

    In this paper, we present a combined STM and EPR study on the adsorption and self-organization of monolayers formed from 2-(14-Carboxytetradecyl)-2-ethyl-4,4-dimethyl-3-oxazolidinyloxy (16DS) and 4',4'-Dimethylspiro(5α-cholestane-3,2'-oxazolidin)-3'-yloxy (CSL) adsorbed on a highly oriented pyrolitic graphite HOPG(0 0 0 1) substrate. Both 16DS and CSL molecules are persistent free radicals containing a paramagnetic doxyl group. The STM measurements of 16DS on HOPG(0 0 0 1) were performed at the liquid-solid interface while the studies of CSL on HOPG(0 0 0 1) were carried out under ultrahigh vacuum conditions. It was found that the 16DS molecules on the HOPG(0 0 0 1) surface form a highly-ordered monolayer with a domain structure. The high-resolution STM images show structural details of 16DS molecules on HOPG(0 0 0 1) revealing the paramagnetic doxyl group. In contrast, CSL molecules on HOPG(0 0 0 1) form a well-ordered monolayer without domain structure. The EPR results indicate that both compounds deposited on HOPG(0 0 0 1) substrate are not reduced and retain their paramagnetic character. We believe that the molecular systems described can be used in single spin detection experiments using an electron spin noise-scanning tunnelling microscopy (ESN-STM) technique. In particular, the possibility of obtaining contrast spin signals from the paramagnetic and diamagnetic parts of molecules increases the significance of our results.

  10. Resources.

    Science.gov (United States)

    Stewart, John; MacDonald, Ian

    1980-01-01

    Presents a guide to resources on television drama available to teachers for classroom use in television curriculum. Lists American and British television drama videorecordings of both series and individual presentations and offers a bibliography of "one-off" single fiction plays produced for British television. (JMF)

  11. Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

    OpenAIRE

    Saffarzadeh, Alireza; Daqiq, Reza

    2009-01-01

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

  12. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... arm. Just a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ligament and ... difficult. Often, the cause is having a smaller carpal tunnel than other people do. Other causes include ...

  13. Investigation into scanning tunnelling luminescence microscopy

    CERN Document Server

    Manson-Smith, S K

    2001-01-01

    This work reports on the development of a scanning tunnelling luminescence (STL) microscope and its application to the study of Ill-nitride semiconductor materials used in the production of light emitting devices. STL microscopy is a technique which uses the high resolution topographic imaging capabilities of the scanning tunnelling microscope (STM) to generate high resolution luminescence images. The STM tunnelling current acts as a highly localised source of electrons (or holes) which generates luminescence in certain materials. Light generated at the STM tunnelling junction is collected concurrently with the height variation of the tunnelling probe as it is scanned across a sample surface, producing simultaneous topographic and luminescence images. Due to the very localised excitation source, high resolution luminescence images can be obtained. Spectroscopic resolution can be obtained by using filters. Additionally, the variation of luminescence intensity with tunnel current and with bias voltage can provi...

  14. Electronic Phase Separation in Pr1x(Ca, Sr)xMnO3δ and Tunneling Magnetoresistance in Sr2FeMoO6

    International Nuclear Information System (INIS)

    In this work, we approach two aspects of the physics of magnetic perovskites presenting colossal magnetoresistance (CMR). Firstly, we go deeply into the phase separation (PS) between the ferromagnetic (FM) metallic state and the antiferro-magnetic (AFM) charge ordered (CO) insulating state, in manganites of the type Pr1x(Ca,Sr)xMnO3δ. Secondly, and more briefly, we analyze the problem of the influence of the grain boundary insulating barriers on the tunneling magnetoresistance in the Sr2FeMoO6 double perovskite.The use of different measurement techniques allowed us to make a complete characterization of the PS state in the compounds Pr0.65Ca0.35-ySryMnO3 for 0≤ y ≤ 0.20, Pr0.5Sr0.5-zCazMnO3 for z = 0, 0.1 and 0.2 and Pr1-xCax-0.3Sr0.3MnO3 (0.46≤ x ≤ 0.54), that were prepared in our laboratory.The structural studies of these materials were performed at room temperature by means of X-ray diffraction. At low temperatures, the phase coexistence was observed by global magnetic techniques, as SQUID magnetometry and neutron diffraction, as well as measurements sensitive to the local magnetic environment, as electron spin resonance (ESR).The electrical characterization, performed through resistivity and thermoelectric power (Seebeck effect) measurements, allowed us to elucidate the characteristics of the metal-insulator transitions, which are directly related to the magnetic properties of the PS state. In Pr0.65Ca0.35-ySryMnO3 compound we studied the effects of the average ionic radius of the A site of the perovskite (A> ) keeping constant the carrier concentration (x = 0.35). This material presents an evolution from a CO insulating phase for small A> (y =0), towards the FM metallic phase for large A> (y = 0.20). In the intermediate region, where a first order metal-insulator transition occurs, the strong competition between both phases induces the PS state in a wide temperature range. In order to quantify this coexistence, we obtained the FM phase fraction (X) as

  15. Utilization of Electronic Information Resources by Undergraduate Students of University of Ibadan: A Case Study of Social Sciences and Education

    Science.gov (United States)

    Owolabi, Sola; Idowu, Oluwafemi A.; Okocha, Foluke; Ogundare, Atinuke Omotayo

    2016-01-01

    The study evaluated utilization of electronic information resources by undergraduates in the Faculties of Education and the Social Sciences in University of Ibadan. The study adopted a descriptive survey design with a study population of 1872 undergraduates in the Faculties of Education and the Social Sciences in University of Ibadan, from which a…

  16. Impact of Electronic Resources and Usage in Academic Libraries in Ghana: Evidence from Koforidua Polytechnic & All Nations University College, Ghana

    Science.gov (United States)

    Akussah, Maxwell; Asante, Edward; Adu-Sarkodee, Rosemary

    2015-01-01

    The study investigates the relationship between impact of electronic resources and its usage in academic libraries in Ghana: evidence from Koforidua Polytechnic & All Nations University College, Ghana. The study was a quantitative approach using questionnaire to gather data and information. A valid response rate of 58.5% was assumed. SPSS…

  17. Electronic characterization of LaAlO{sub 3}-SrTiO{sub 3} interfaces by scanning tunneling spectroscopy; Elektronische Charakterisierung von LaAlO{sub 3}-SrTiO{sub 3}-Grenzflaechen mittels Rastertunnelspektroskopie

    Energy Technology Data Exchange (ETDEWEB)

    Breitschaft, Martin

    2010-10-22

    When LaAlO{sub 3} is epitaxially grown on TiO{sub 2}-terminated SrTiO{sub 3}, an electrically conducting interface is generated. In this respect, the physical properties of the interface differ substantially from those of both LaAlO{sub 3} and SrTiO{sub 3}, which are electrically insulating in bulk form. This dissertation looks into the question of the microscopic structure of the conducting two-dimensional interface electron system. Comparing the electronic density of states of LaAlO{sub 3}-SrTiO{sub 3} interfaces measured by scanning tunneling spectroscopy with results of density functional theory, the interface electron system is found to be substantially coined by the hosting transition metal lattices. The comparison yields a detailed picture of the microscopic structure of the interface electron system. (orig.)

  18. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  19. Tunneling spectroscopy on grain boundary junctions in electron-doped high-temperature superconductors; Tunnelspektroskopie an Korngrenzenkontakten aus elektronendotierten Hochtemperatur-Supraleitern

    Energy Technology Data Exchange (ETDEWEB)

    Welter, B.

    2007-12-07

    Some methods are developed anf presented, by means of which from experimental tunnel spectra, especially on symmetric SIS contacts, informations about the properties of electrodes and tunnel barriers can be obtained. Especially a procedure for the numerical unfolding of symmetric SIS spectra is proposed. Furthermore a series of models is summarized, which can explain the linear background conductivity observed in many spectra on high-temperature superconductors. The results of resistance measurements on film bridges are presented. Especially different methods for the determination of H{sub c2}(T) respectively H{sub c2}(0) are presented and applied to the experimental data. Finally the results of the tunnel-spectroscopy measurements are shown.

  20. Superpoissonian shot noise in organic magnetic tunnel junctions

    Science.gov (United States)

    Cascales, Juan Pedro; Hong, Jhen-Yong; Martinez, Isidoro; Lin, Minn-Tsong; Szczepański, Tomasz; Dugaev, Vitalii K.; Barnaś, Józef; Aliev, Farkhad G.

    2014-12-01

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  1. Superpoissonian shot noise in organic magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Hong, Jhen-Yong; Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Szczepański, Tomasz; Dugaev, Vitalii K. [Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  2. The growth of epitaxial iron oxides on platinum (111) as studied by X-ray photoelectron diffraction, scanning tunneling microscopy, and low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.J.

    1995-05-01

    Three complementary surface structure probes, x-ray photoelectron diffraction (XPD), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED) have been combined in a single instrument. This experimental system has been utilized to study the structure and growth mechanisms of iron oxide films on Pt(111); these films were formed by first depositing a single overlayer of Fe with a certain coverage in monolayers (ML`s), and then thermally oxidizing it in an oxygen atmosphere. For films up to {approximately}1 ML in thickness, a bilayer of Fe and O similar to those in FeO(111) is found to form. In agreement with prior studies, STM and LEED show this to be an incommensurate oxide film forming a lateral superlattice with short- and long-range periodicities of {approximately}3.1 {Angstrom} and {approximately}26.0 {Angstrom}. XPD in addition shows a topmost oxygen layer to be relaxed inward by -0.6 {Angstrom} compared to bulk FeO(111), and these are new structural conclusions. The oxygen stacking in the FeO(111) bilayer is dominated by one of two possible binding sites. For thicker iron oxide films from 1.25 ML to 3.0 ML, the growth mode is essentially Stranski-Krastanov: iron oxide islands form on top of the FeO(111) bilayer mentioned above. For iron oxide films of 3.0 ML thickness, x-ray photoelectron spectroscopy (XPS) yields an Fe 2p{sub 3/2} binding energy and an Fe:O stoichiometry consistent with the presence of Fe{sub 3}O{sub 4}. Our XPD data further prove this overlayer to be Fe{sub 3}O{sub 4}(111)-magnetite in two almost equally populated domains with a 180{degrees} rotation between them. The structural parameters for this Fe{sub 3}O{sub 4} overlayer generally agree with those of a previous LEED study, except that we find a significant difference in the first Fe-O interplanar spacing. This work demonstrates the considerable benefits to be derived by using this set of complementary surface structure probes in such epitaxial growth studies.

  3. Laser tunneling from aligned molecules

    CERN Document Server

    Smeenk, C T L; Sokolov, A V; Spanner, M; Lee, K F; Staudte, A; Villeneuve, D M; Corkum, P B

    2013-01-01

    We study multi-photon ionization from N_2, O_2 and benzene using circularly polarized light. By examining molecular frame photo-electron angular distributions, we illustrate how multi-photon ionization acts a momentum-selective probe of the local electron density in the Dyson orbitals for these molecules. We find good agreement with calculations based on a tunneling model and including saturation effects.

  4. The influence of the disorder on the electronic states of the Heusler compound Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} studied by ARUPS and tunnelling spectroscopy.

    Energy Technology Data Exchange (ETDEWEB)

    Arbelo Jorge, Elena; Herbort, Christian; Hahn, Michaela; Scoenhense, Gerd; Jourdan, Martin [Institute of Physics, Johannes-Gutenberg University, Staudinger Weg 7, 55099 Mainz (Germany)

    2011-07-01

    Heusler compounds have attracted much interest based on their half metallic properties predicted by band structure calculations. However, a direct comparison of the theoretical predictions with experiments remains difficult, even if the spin degree of freedom is averaged. Additionally, the influence of atomic disorder on the band structure is of major interest and is in general expected to result in a broadening of the electronic states. We present in-situ spin averaged angular resolved UV-photoemission spectroscopy (ARUPS) of rf-sputtered Heusler thin films. Additionally, tunnelling spectroscopy on planar junctions of Heusler thin films with AlO{sub x} barrier is performed. Samples of the compound Co{sub 2}FeAl{sub 0.3}Si{sub 0.7} with different degrees of disorder (B2 and L2{sub 1}) are studied. The ARUPS results at energies close to the Fermi edge are compared to measurements of the bias voltage dependent tunnelling conductivity of Co{sub 2}FeAl{sub 0.3}Si{sub 0.7}/AlO{sub x}/Ag and Co{sub 2}FeAl{sub 0.3}Si{sub 0.7}/AlO{sub x}/CoFe junctions. Whereas the ARUPS shows clear correlations with the degree of disorder of the Heusler compound, the interpretation of the tunnelling spectroscopy results in terms of the density of states is challenging.

  5. Verification of Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC and n+ poly-Si/SiO2/n-4H SiC MOS devices by different models

    Science.gov (United States)

    Kodigala, Subba Ramaiah

    2016-11-01

    This article emphasizes verification of Fowler-Nordheim electron tunneling mechanism in the Ni/SiO2/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current-field (J-F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J-F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

  6. Use and Cost of Electronic Resources in Central Library of Ferdowsi University Based on E-metrics

    Directory of Open Access Journals (Sweden)

    Mohammad Reza Davarpanah

    2012-07-01

    Full Text Available The purpose of this study was to investigate the usage of electronic journals in Ferdowsi University, Iran based on e-metrics. The paper also aimed to emphasize the analysis of cost-benefit and the correlation between the journal impact factors and the usage data. In this study experiences of Ferdowsi University library on licensing and usage of electronic resources was evaluated by providing a cost-benefit analysis based on the cost and usage statistics of electronic resources. Vendor-provided data were also compared with local usage data. The usage data were collected by tracking web-based access locally, and by collecting vender-provided usage data. The data sources were one-year of vendor-supplied e-resource usage data such as Ebsco, Elsevier, Proquest, Emerald, Oxford and Springer and local usage data collected from the Ferdowsi university web server. The study found that actual usage values differ for vendor-provided data and local usage data. Elsevier has got the highest usage degree in searches, sessions and downloads. Statistics also showed that a small number of journals satisfy significant amount of use while the majority of journals were used less frequent and some were never used at all. The users preferred the PDF rather than HTML format. The data in subject profile suggested that the provided e-resources were best suited to certain subjects. There was no correlation between IF and electronic journal use. Monitoring the usage of e-resources gained increasing importance for acquisition policy and budget decisions. The article provided information about local metrics for the six surveyed vendors/publishers, e.g. usage trends, requests per package, cost per use as related to the scientific specialty of the university.

  7. Access to electronic information resources: their role in the provision of learning opportunities for young people. A constructivist inquiry

    OpenAIRE

    Pickard, Alison

    2002-01-01

    This PhD study was designed to answer the question; does access to electronic information resources have a role to play in breaking down barriers to learning encountered by young people? If so, how does it, why does it and what are the circumstances which influence this role? The answers would then provide a deeper understanding of the use of these resources. This is a constructivist inquiry; sixteen young people aged 13-14 years were selected using snowball sampling to provide maximum variat...

  8. Intention to Use and Actual Use of Electronic Information Resources: Further Exploring Technology Acceptance Model (TAM)

    OpenAIRE

    Tao, Donghua

    2009-01-01

    Following up a previous study that examined public health students’ intention to use e-resources for completing research paper assignments, the present study proposed two models to investigate whether or not public health students actually used the e-resources they intended to use and whether or not the determinants of intention to use predict actual use of e-resources. Focus groups and pre- and post-questionnaires were used to collect data. Descriptive analysis, data screening, and Structura...

  9. Homoepitaxial graphene tunnel barriers for spin transport

    Science.gov (United States)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  10. Challenges in the implementation of an electronic surveillance system in a resource-limited setting: Alerta, in Peru

    Directory of Open Access Journals (Sweden)

    Soto Giselle

    2008-11-01

    Full Text Available Abstract Background Infectious disease surveillance is a primary public health function in resource-limited settings. In 2003, an electronic disease surveillance system (Alerta was established in the Peruvian Navy with support from the U.S. Naval Medical Research Center Detachment (NMRCD. Many challenges arose during the implementation process, and a variety of solutions were applied. The purpose of this paper is to identify and discuss these issues. Methods This is a retrospective description of the Alerta implementation. After a thoughtful evaluation according to the Centers for Disease Control and Prevention (CDC guidelines, the main challenges to implementation were identified and solutions were devised in the context of a resource-limited setting, Peru. Results After four years of operation, we have identified a number of challenges in implementing and operating this electronic disease surveillance system. These can be divided into the following categories: (1 issues with personnel and stakeholders; (2 issues with resources in a developing setting; (3 issues with processes involved in the collection of data and operation of the system; and (4 issues with organization at the central hub. Some of the challenges are unique to resource-limited settings, but many are applicable for any surveillance system. For each of these challenges, we developed feasible solutions that are discussed. Conclusion There are many challenges to overcome when implementing an electronic disease surveillance system, not only related to technology issues. A comprehensive approach is required for success, including: technical support, personnel management, effective training, and cultural sensitivity in order to assure the effective deployment of an electronic disease surveillance system.

  11. How Human Resource Professionals Use Electronic Channels to Communicate CSR : A case study focused on Solvay's French industrial sites

    OpenAIRE

    Fournet, Clara; Pauly, Marissa

    2015-01-01

    Corporate Social Responsibility (CSR) has become a large concern for many companies with the rise of globalization. Oftentimes, companies are encouraged to communicate CSR externally, but not internally. This research focuses upon the internal communication of CSR, specifically how Human Resource (HR) professionals use electronic channels to communicate to employees. The scope of this research is focused solely upon HR professionals within Solvay’s French industrial sites, which produce chemi...

  12. Drill and blast tunnelling; Konvensjonell drift av tunneler

    Energy Technology Data Exchange (ETDEWEB)

    Roenn, Paal-Egil

    1997-12-31

    This thesis treats drill and blast tunnelling. The rapid technological advance necessitates revised and updated design criteria, quality requirements and quality control. In situ blast experiments were carried out in order to test new methods and improve the basis for calculation and design. The main topics of the experiments were (1) longer rounds and increased drillhole diameter, (2) emulsion slurry as explosives in tunnelling, and (3) electronic detonators in contour blasting. The experiments show that it is technically feasible to blast rounds of up to 8.6 m length. Using current technology, the economical optimum round length is substantially shorter. Dust, low visibility, noise and toxic fumes are occupational environmental strains for the tunnel workers. Several of the environmental factors are strongly influenced by the type of explosives used. For example, emulsion slurry resulted in 4 to 5 times better visibility than Anolit and the concentration of respirable dust and total dust was reduced by 30-50 %. Electronic detonators were tested and found to give a higher percentage of remaining drillholes in the contour than Nonel detonators. The thesis includes a chapter on economic design of hydropower tunnels. 42 refs., 83 figs., 45 tabs.

  13. Spin-dependent tunnelling in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tsymbal, Evgeny Y [Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE (United States); Mryasov, Oleg N [Seagate Research, 1251 Waterfront Place, Pittsburgh, PA (United States); LeClair, Patrick R [Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA (United States)

    2003-02-05

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  14. Superpoissonian shot noise in organic magnetic tunnel junctions

    OpenAIRE

    Cascales, Juan Pedro; Hong, Jhen-Yong; Martinez, Isidoro; Lin, Minn-Tsong; Szczepanski, Tomasz; Dugaev, Vitalii K.; Barnas, Jozef; Aliev, Farkad G.

    2015-01-01

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here we investigate conductance and shot noise in magnetic tunnel junctions with PTCDA barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10 and 40\\%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum value...

  15. Tunneling Processes into Localized Subgap States in Superconductors.

    Science.gov (United States)

    Ruby, Michael; Pientka, Falko; Peng, Yang; von Oppen, Felix; Heinrich, Benjamin W; Franke, Katharina J

    2015-08-21

    We combine scanning-tunneling-spectroscopy experiments probing magnetic impurities on a superconducting surface with a theoretical analysis of the tunneling processes between (superconducting) tip and substrate. We show that the current through impurity-induced Shiba bound states is carried by single-electron tunneling at large tip-substrate distances and Andreev reflections at smaller distances. The single-electron current requires relaxation processes, allowing us to extract information on quasiparticle transitions and lifetimes. PMID:26340200

  16. Tracking the Flow of Resources in Electronic Waste - The Case of End-of-Life Computer Hard Disk Drives.

    Science.gov (United States)

    Habib, Komal; Parajuly, Keshav; Wenzel, Henrik

    2015-10-20

    Recovery of resources, in particular, metals, from waste flows is widely seen as a prioritized option to reduce their potential supply constraints in the future. The current waste electrical and electronic equipment (WEEE) treatment system is more focused on bulk metals, where the recycling rate of specialty metals, such as rare earths, is negligible compared to their increasing use in modern products, such as electronics. This study investigates the challenges in recovering these resources in the existing WEEE treatment system. It is illustrated by following the material flows of resources in a conventional WEEE treatment plant in Denmark. Computer hard disk drives (HDDs) containing neodymium-iron-boron (NdFeB) magnets were selected as the case product for this experiment. The resulting output fractions were tracked until their final treatment in order to estimate the recovery potential of rare earth elements (REEs) and other resources contained in HDDs. The results further show that out of the 244 kg of HDDs treated, 212 kg comprising mainly of aluminum and steel can be finally recovered from the metallurgic process. The results further demonstrate the complete loss of REEs in the existing shredding-based WEEE treatment processes. Dismantling and separate processing of NdFeB magnets from their end-use products can be a more preferred option over shredding. However, it remains a technological and logistic challenge for the existing system. PMID:26351732

  17. Tracking the Flow of Resources in Electronic Waste - The Case of End-of-Life Computer Hard Disk Drives.

    Science.gov (United States)

    Habib, Komal; Parajuly, Keshav; Wenzel, Henrik

    2015-10-20

    Recovery of resources, in particular, metals, from waste flows is widely seen as a prioritized option to reduce their potential supply constraints in the future. The current waste electrical and electronic equipment (WEEE) treatment system is more focused on bulk metals, where the recycling rate of specialty metals, such as rare earths, is negligible compared to their increasing use in modern products, such as electronics. This study investigates the challenges in recovering these resources in the existing WEEE treatment system. It is illustrated by following the material flows of resources in a conventional WEEE treatment plant in Denmark. Computer hard disk drives (HDDs) containing neodymium-iron-boron (NdFeB) magnets were selected as the case product for this experiment. The resulting output fractions were tracked until their final treatment in order to estimate the recovery potential of rare earth elements (REEs) and other resources contained in HDDs. The results further show that out of the 244 kg of HDDs treated, 212 kg comprising mainly of aluminum and steel can be finally recovered from the metallurgic process. The results further demonstrate the complete loss of REEs in the existing shredding-based WEEE treatment processes. Dismantling and separate processing of NdFeB magnets from their end-use products can be a more preferred option over shredding. However, it remains a technological and logistic challenge for the existing system.

  18. Understanding intention to use electronic information resources: A theoretical extension of the technology acceptance model (TAM).

    Science.gov (United States)

    Tao, Donghua

    2008-11-06

    This study extended the Technology Acceptance Model (TAM) by examining the roles of two aspects of e-resource characteristics, namely, information quality and system quality, in predicting public health students' intention to use e-resources for completing research paper assignments. Both focus groups and a questionnaire were used to collect data. Descriptive analysis, data screening, and Structural Equation Modeling (SEM) techniques were used for data analysis. The study found that perceived usefulness played a major role in determining students' intention to use e-resources. Perceived usefulness and perceived ease of use fully mediated the impact that information quality and system quality had on behavior intention. The research model enriches the existing technology acceptance literature by extending TAM. Representing two aspects of e-resource characteristics provides greater explanatory information for diagnosing problems of system design, development, and implementation.

  19. Analysis on Influence of Tunnel Construction Factors to Groundwater Resources%隧道施工因素对地下水资源量的影响分析

    Institute of Scientific and Technical Information of China (English)

    陈宏伟

    2012-01-01

    针对石太客运专线石板山隧道地处干旱山区,地下水资源匮乏,生态环境脆弱,隧道施工过程中对当地居民生产生活用水造成一定影响的特点,进行水位恢复研究.对注浆加固、径向注浆加固、喷射混凝土等施工措施以及支护封闭时间对地下水位恢复的影响进行分析,为设计、施工方案系统的合理选择提供技术依据.研究结果表明:隧道影响区域内地下水位恢复与工程因素有关,不同支护封闭形式对水位恢复的影响存在较大差异,而支护封闭时间对地下水位恢复程度影响不大.%Considering the fact that the Shibanshan Tunnel of the Shijiazhuang-Taiyuan Passenger Dedicated Line was located in the arid mountain area where underground water resources were lacking, the ecological environment was fragile and tunnel construction had some impact on local domestic and production water supply, study on recovery of the underground water level was made. The influence of construction measures including grouting reinforcement, radial grouting reinforcement and shotcreting and support closing time on recovery of the underground water level was analyzed to provide technical basis for reasonable choice of design and construction schemes. The results show as follows: Recovery of the underground water level is related to engineering factors in the tunnel affected area; different support closing modes cause obviously differentiated effect on recovery of the underground water level whereas little effect is created when referring to the support closing time.

  20. Dynamical image-charge effect in molecular tunnel junctions

    DEFF Research Database (Denmark)

    Jin, Chengjun; Thygesen, Kristian Sommer

    2014-01-01

    When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how...

  1. Strong-Field Photoionization as Excited-State Tunneling.

    Science.gov (United States)

    Serebryannikov, E E; Zheltikov, A M

    2016-03-25

    We show that, in an intense laser field, ultrafast photoionization can occur through quantum pathways that cannot be categorized as multiphoton ionization or ground-state tunneling. In this regime, the subcycle electron-wave-packet dynamics leading to photoionization occurs via electron excited states, from where the electrons tunnel to the continuum within a tiny fraction of the field cycle. For high field intensities, this ionization pathway is shown to drastically enhance the dynamic leakage of the electron wave packet into the continuum, opening an ionization channel that dominates over ground-state electron tunneling. PMID:27058079

  2. The level of the usage of the human resource information system and electronic recruitment in Croatian companies

    Directory of Open Access Journals (Sweden)

    Snježana Pivac

    2014-12-01

    Full Text Available Performing business according to contemporary requirements influences companies for continuous usage of modern managerial tools, such as a human resource information system (HRIS and electronic recruitment (ER. Human resources have been recognised as curtail resources and the main source of a competitive advantage in creation of successful business performance. In order to attract and select the top employees, companies use quality information software for attracting internal ones, and electronic recruitment for attracting the best possible external candidates. The main aim of this paper is to research the level of the usage of HRIS and ER within medium-size and large Croatian companies. Moreover, the additional aim of this paper is to evaluate the relationship among the usage of these modern managerial tools and the overall success of human resource management within these companies. For the purpose of this paper, primary and secondary research has been conducted in order to reveal the level of the usage of HRIS and ER as well as the overall success of human resource management in Croatian companies. The companies’ classification (HRIS and ER is done by using the non-hierarchical k-means cluster method as well as the nonparametric Kruskal Wallis test. Further, the companies are ranked by the multicriteria PROMETHEE method. Relevant nonparametric tests are used for testing the overall companies’ HRM. Finally, binary logistic regression is estimated, relating binary variable HRM and HRIS development. After detailed research, it can be concluded that large Croatian companies apply HRIS in majority (with a positive relation to HRM performance, but still require certain degrees of its development.

  3. Tunneling dynamics in multiphoton ionization and attoclock calibration

    CERN Document Server

    Klaiber, M; Keitel, C H

    2014-01-01

    The intermediate domain of strong-field ionization between the tunneling and the multiphoton regimes is investigated using the strong field approximation and the imaginary-time method. An intuitive model for the dynamics is developed which describes the ionization process within a nonadiabatic tunneling picture with a coordinate dependent electron energy during the under-the-barrier motion. The nonadiabatic effects in the elliptically polarized laser field induce a transversal momentum shift of the tunneled electron wave packet at the tunnel exit, a delayed appearance in the continuum as well as a shift of the tunneling exit towards the ionic core. The latter significantly modifies the Coulomb focusing during the electron excursion in the laser field after exiting the ionization tunnel. We show that nonadiabatic effects are especially large when the Coulomb field of the ionic core is taken into account during the under-the-barrier motion. The simpleman model modified with these nonadiabatic corrections provid...

  4. Light emission in tunneling processes

    International Nuclear Information System (INIS)

    We introduce a new method for mapping and analyzing (with atomic resolution) molecules adsorbed on surfaces. This method relies on the detection of fluorescence from molecules, electronically excited by inelastic tunneling in STM. It may combines the excellent spatial resolution of STM together with the specificity of fluorescence as an analytical tool. We propose to overcome this problem by choosing 'transparent conductors' (such as Indium Tin Oxides-lTO) as the STM substrate. ITO, characterized by a large optical gap, will not quench electronically excited molecules. We have tested our idea to enhance the quantum efficiency of molecular emission on surfaces by using transparent conductors in the tunneling junction. We have constructed large area tunnel-junctions by using the squeezable tunnel-Junction technique. The principle of this technique is to squeeze together smooth flat surfaces separated by a thin spacer. By applying a controlled force, junctions with surface area of thousands of square angstroms are made. We have recorded light emission from bare tunneling surfaces and from surfaces coated with molecules (DCA, DCM and COUMARINE), as a function of the bias voltage in the range of 0-5 volts. Typical tunneling currents are 50 nano ampere. Our main findings are: The bare ITO surface emits light at biasing voltages larger than 4.0 eV which corresponds to electron-hole excitation over the optical gap of ITO. ITO surfaces coated with chromophore molecules have shown enhanced light emission at a voltage bias which corresponds to the allowed excitations energies in the chromophore. A voltage bias of 2-5 V yielded light emission of 5 * 103 photon/μC. The corresponding metallic surfaces, bare or coated with a chromophore did not show any emission. In order to test the possibility of using this effect for imaging purposes we have replaced one electrode of junction with an ITO coated glass tip of 180 μm radius. such a tip yield an upper limit of tunneling area of

  5. Interface for electronic data capture systems for clinical trials by optimal utilization of available hospital resources.

    Science.gov (United States)

    Kaushik, Sashank; Khan, Anzalee; Kaushik, Saurabh; Lindenmayer, Jean-Pierre

    2008-01-01

    We describe Clinical Trials System (CTS), an innovative EDC system utilizing data from existing hospital-based electronic databases that supports information gathering and storing for various clinical trials. The complexities of designing electronic clinical trials systems and their ideal features are outlined. CTS optimally utilizes existing electronic databases in a well-organized and easy-to-reference format. CTS is currently incorporated within a large psychiatric center, allowing easy sharing of information and data among multidisciplinary clinical and research teams. PMID:18999083

  6. Attoclock reveals natural coordinates of the laser-induced tunnelling current flow in atoms

    DEFF Research Database (Denmark)

    Pfeiffer, Adrian N.; Cirelli, Claudio; Smolarski, Mathias;

    2012-01-01

    the attoclock technique4 to obtain experimental information about the electron tunnelling geometry (the natural coordinates of the tunnelling current flow) and exit point. We confirm vanishing tunnelling delay time, show the importance of the inclusion of Stark shifts5, 6 and report on multi-electron effects...

  7. Intention to use and actual use of electronic information resources: further exploring Technology Acceptance Model (TAM).

    Science.gov (United States)

    Tao, Donghua

    2009-11-14

    Following up a previous study that examined public health students' intention to use e-resources for completing research paper assignments, the present study proposed two models to investigate whether or not public health students actually used the e-resources they intended to use and whether or not the determinants of intention to use predict actual use of e-resources. Focus groups and pre- and post-questionnaires were used to collect data. Descriptive analysis, data screening, and Structural Equation Modeling (SEM) techniques were used for data analysis. The study found that the determinants of intention-to-use significantly predict actual use behavior. Direct impact of perceived usefulness and indirect impact of perceived ease of use to both behavior intention and actual behavior indicated the importance of ease of use at the early stage of technology acceptance. Non-significant intention-behavior relationship prompted thoughts on the measurement of actual behavior and multidimensional characteristics of the intention construct.

  8. Carpal Tunnel Surgery

    Medline Plus

    Full Text Available ... that is putting pressure on the median nerve. This is the procedure of carpal tunnel syndrome release, ... for the condition of carpal tunnel syndrome. At this point in time, we have the patient under ...

  9. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  10. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  11. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  12. QR Codes as Finding Aides: Linking Electronic and Print Library Resources

    Science.gov (United States)

    Kane, Danielle; Schneidewind, Jeff

    2011-01-01

    As part of a focused, methodical, and evaluative approach to emerging technologies, QR codes are one of many new technologies being used by the UC Irvine Libraries. QR codes provide simple connections between print and virtual resources. In summer 2010, a small task force began to investigate how QR codes could be used to provide information and…

  13. Helping Patrons Find Locally Held Electronic Resources: An Interlibrary Loan Perspective

    Science.gov (United States)

    Johnston, Pamela

    2016-01-01

    The University of North Texas Libraries provide extensive online access to academic journals through major vendor databases. As illustrated by interlibrary loan borrowing requests for items held in our databases, patrons often have difficulty navigating the available resources. In this study, the Interlibrary Loan staff used data gathered from the…

  14. Supporting Learning and Information Sharing in Natural Resource Management with Technologies for Electronic Documents

    Science.gov (United States)

    Alem, Leila; McLean, Alistair

    2005-01-01

    Community participation is central to achieving sustainable natural resource management. A prerequisite to informed participation is that community and stakeholder groups have access to different knowledge sources, are more closely attuned to the different issues and viewpoints, and are sufficiently equipped to understand and maybe resolve complex…

  15. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  16. Magneto-transport characteristics of electron-doped Ca{sub 0.85}Sm{sub 0.15}MnO{sub 3} manganite: Hopping and tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Hossain Khan, Momin; Pal, Sudipta, E-mail: sudipta.pal@rediffmail.com

    2015-11-01

    In this work we have reported the temperature and magnetic field dependence of resistivity and magnetoresistance in electron-doped polycrystalline Ca{sub 0.85}Sm{sub 0.15}MnO{sub 3} (CSMO). It shows a robust semiconducting behavior down to the lowest temperature (5 K) of investigation. High-T resistivity of the present sample follows small polaron hopping (SPH) conduction mechanism. The variable range hopping (VRH) model has been found to fit low-T resistivity data. Intermediate-temperature ρ(T) data has been explained using a parallel combination of SPH and 3D-VRH model. The resistivity shows strong dependence on the magnetic field–temperature history. Magnetoresistance (MR) of the sample shows strong irreversibility with respect to sweeping of the field between the highest positive and negative values. Low-ρ state of the envelope curve in MR indicates a manifestation of kinetic arrest of the electronic phase on application of magnetic field. We demonstrates that the sizable MR at low fields dominated by spin-polarized tunneling between the adjacent grains. - Highlights: • Temperature and magnetic field dependent resistivity of Ca{sub 0.85}SM{sub 0.15}MnO{sub 3} was studied. • Small polaron hopping dominates at high-T region. • ρ(T) exhibited a variable range hopping model at low-T region. • Low-ρ state has been explained by the kinetic arrest of electronic phase. • Magnetoresistance is governed by spin-polarized tunneling between the adjacent grains.

  17. Tunneling Time in Ultrafast Science is Real and Probabilistic

    CERN Document Server

    Landsman, Alexandra; Maurer, Jochen; Boge, Robert; Ludwig, André; Heuser, Sebastian; Cirelli, Claudio; Gallmann, Lukas; Keller, Ursula

    2013-01-01

    We compare the main competing theories of tunneling time against experimental measurements using the attoclock in strong laser field ionization of helium atoms. Refined attoclock measurements reveal a real and not instantaneous tunneling delay time over a large intensity regime, using two different experimental apparatus. Only two of the theoretical predictions are compatible within our experimental error: the Larmor time, and the probability distribution of tunneling times constructed using a Feynman Path Integral (FPI) formulation. The latter better matches the observed qualitative change in tunneling time over a wide intensity range, and predicts a broad tunneling time distribution with a long tail. The implication of such a probability distribution of tunneling times, as opposed to a distinct tunneling time, challenges how valence electron dynamics are currently reconstructed in attosecond science. It means that one must account for a significant uncertainty as to when the hole dynamics begin to evolve.

  18. The Shadow Uniform Resource Locator: Standardizing Citations of Electronically Published Materials

    OpenAIRE

    DiCarlo, Joseph V; Pastor, Xavier; Markovitz, Barry P

    2000-01-01

    Citation of scientific materials published on the Internet is often cumbersome because of unwieldy uniform resource locators (URLs). The authors describe a format for URLs that simplifies citation of scholarly materials. Its use depends on a simple HTML device, the “refresh page.” Uniform citation would follow this format: [Author I. Title of article. http://domain/year/month-day(e#).html ]. The HTML code for such a page is: . The code instructs the browser to suppress the content...

  19. Tunneling and propping : A justification for pyramidal ownership

    NARCIS (Netherlands)

    Riyanto, Y.E.; Toolsema-Veldman, Linda

    2008-01-01

    This paper links existence of the pyramidal ownership structure to tunneling and propping. Tunneling refers to a transfer of resources from a lower-level firm to a higher-level firm in the pyramidal chain, whereas propping concerns a transfer in the opposite direction intended to bail out the receiv

  20. Electronic Resources in a Next-Generation Catalog: The Case of WorldCat Local

    Science.gov (United States)

    Shadle, Steve

    2009-01-01

    In April 2007, the University of Washington Libraries debuted WorldCat Local (WCL), a localized version of the WorldCat database that interoperates with a library's integrated library system and fulfillment services to provide a single-search interface for a library's physical and electronic content. This brief will describe how WCL incorporates a…

  1. Equalizing Access to Electronic Networked Resources: A Model for Rural Libraries in the United States.

    Science.gov (United States)

    Senkevitch, Judith J.; Wolfram, Dietmar

    1994-01-01

    Provides an overview of the current state of networking technology in rural libraries and describes a model for educating rural librarians in accessing electronic networks. Topics discussed include information needs in rural libraries; telecommunications technology access in rural areas; and examples of services to enhance information access.…

  2. Preference and Use of Electronic Information and Resources by Blind/Visually Impaired in NCR Libraries in India

    Directory of Open Access Journals (Sweden)

    Shailendra Kumar

    2013-06-01

    Full Text Available This paper aims to determine the preference and use of electronic information and resources by blind/visually impaired users in the leading National Capital Region (NCR libraries of India. Survey methodology has been used as the basic research tool for data collection with the help of questionnaires. The 125 in total users surveyed in all the five libraries were selected randomly on the basis of willingness of the users with experience of working in digital environments to participate in the survey. The survey results were tabulated and analyzed with descriptive statistics methods using Excel software and 'Stata version 11'. The findings reveal that ICT have a positive impact in the lives of people with disabilities as it helps them to work independently and increases the level of confidence among them. The Internet is the most preferred medium of access to information among the majority of blind/visually impaired users. The 'Complexity of content available on the net' is found as the major challenge faced during Internet use by blind users of NCR libraries. 'Audio books on CDs/DVDs and DAISY books' are the most preferred electronic resources among the majority of blind/visually impaired users. This study will help the library professionals and organizations/institutions serving people with disabilities to develop effective library services for blind/visually impaired users in the digital environment on the basis of findings on information usage behavior in the study.

  3. Positive Correlations in Tunneling through coupled Quantum Dots

    OpenAIRE

    Sprekeler, H.; Kiesslich, G.; Wacker, A; Schoell, E.

    2003-01-01

    Due to the Fermi-Dirac statistics of electrons the temporal correlations of tunneling events in a double barrier setup are typically negative. Here, we investigate the shot noise behavior of a system of two capacitively coupled quantum dot states by means of a Master equation model. In an asymmetric setup positive correlations in the tunneling current can arise due to the bunching of tunneling events. The underlying mechanism will be discussed in detail in terms of the current-current correla...

  4. Electron microscope observation of Salmonella Pullorum transmembrane tunnel mediated by the bacteriophage lysis protein E%噬菌体裂解E蛋白介导鸡白痢沙门菌跨膜孔道的电镜观察

    Institute of Scientific and Technical Information of China (English)

    郭荣显; 耿士忠; 焦红梅; 焦新安; 潘志明; 陈义芳; 安树敏

    2014-01-01

    Bacteriophage lysis protein E can lead to a fusion of the inner and outer membranes to form a specific transmembrane tunnel in Salmonella cytoderm. In this study, scanning electron microscopy ( SEM) and transmission electron microscopy ( TEM) were used to observe the characteristic of the transmembrane tunnel. Bacterial ghosts were prepared by inducing expression of the bacteriophage lysis gene E in Salmonella Pullorum S06004 harboring plasmid pBBR1MCS2-E. The pre-treatment of samples were observed by SEM and TEM. After induced in 42 ℃, the vast majority of Salmonella Pullorum recombinants could form a transmembrane tunnel at the polar sites of bacteria with a diameter varying in the range of 200~400 nm. Bacterial ghosts show the loss of cytoplasmic material and maintain the integrity of the outer membrane structure. The cell surface wrinkled obviously. This research provides an efficient morphological evidence for Salmonella ghosts as vaccine candidate, which is mediated by the bacteriophage lysis protein E.%应用电镜对噬菌体裂解 E蛋白介导沙门菌内外膜融合而形成的特异性跨膜孔道进行超微结构观察。42℃诱导携带温控表达质粒的重组鸡白痢沙门菌S06004(pBBR1MCS2-E)表达E基因以制备鸡白痢沙门菌菌影;样品经前处理,扫描电镜和透射电镜观察其形态结构变化。重组鸡白痢沙门菌经温度诱导后,绝大多数发生裂解,在两极形成直径介于200~400 nm之间的跨膜孔道,细菌整体呈空泡状,并保持完整的外膜结构,但细胞表面发生明显的褶皱。本研究为噬菌体E蛋白裂解沙门菌制备新型灭活疫苗的研究提供了形态学依据。

  5. Mechanism analysis of fault-phase vibration reduction for tunnel blasting initiated by electronic detonators in city area%城区隧道电子雷管起爆错相减震机理分析

    Institute of Scientific and Technical Information of China (English)

    田振农; 孟祥栋; 王国欣

    2012-01-01

    Reducing vibration is a key problem for tunnel blasting in city area. Here, a time-frequency analysis was performed to analyze general features of tunnel blasting vibration. The results showed that the blasting seismic wave is formed with multiple-series blast waves superposition; the initiation network is often divided into several sections at millisecond delay blasting due to limiting of the detonator number, and the superposition manners of blast wave show a lack of control, so the waveform always has several peak vibration velocities. The vibration mitigation effect was studied with engineering tests during initiation with electronic detonators. If the reasonable technical measures were adopted, the blasting vibration peak velocities decreased significantly. Moreover, the mechanism of fault-phase vibration reduction was proposed and discussed by means of high precision of delay initiation of electronic detonators and by using the thought of blasting vibration reduction induced by waveform interference for a reference. The engineering application of tunnel blasting in urban area showed that the blasting design with fault-phase vibration reduction has an ideal effect on vibration reduction.%降低爆破振动是城市隧道爆破的关键技术问题,采用时-频分析方法对隧道爆破振动的一般特征进行了分析,结果表明:爆破地震波是多列爆炸波叠加的结果,采用毫秒延期电雷管起爆时,由于雷管段数的限制,起爆网络经常被分成几个时段,对爆炸波的叠加方式缺乏控制,往往出现若干个振速峰值.通过工程试验,研究了采用电子雷管起爆时的减震效果,结果显示采用电子雷管起爆时,如果技术措施合理,能使爆破振动速度峰值显著降低.根据电子雷管起爆延时精度高的特点,并借鉴干扰减震的思想,提出并讨论了错相减震机理.实际城市隧道爆破工程应用反映了错相减震爆破设计达到了理想的减震效果.

  6. Electronic Resources Management and Long Term Preservation (Is the library a growing organism?)

    OpenAIRE

    Giordano, Tommaso

    2007-01-01

    Digital preservation is a vast and complex issue which involves many aspects and areas of expertise. This paper is rather limited in scope and seeks to develop considerations concerning three questions: the first investigates how the problem of archiving and preservation of electronic journals is perceived by academic libraries, while the second concerns the organizational practices implemented in this area; I conclude with a comparison between the traditional approach and the emerging models...

  7. High order parametric x-radiation from silicon and lithium fluoride crystal monochromators [electronic resource

    OpenAIRE

    Thien, Joseph R.

    1995-01-01

    This thesis examines parametric x-radiation (PXR) generated by Silicon and Lithium Fluoride monochromators, including the first observation of PXR from Lithium Fluoride. Parametric x-radiation may be described as the Bragg scattering of virtual photons associated with relativistic electrons as they pass through single crystal monochromators. As the photons interact with the crystal lattice they produce x-rays which meet the Bragg condition lambda = 2dsintheta sub B, where theta sub B is the a...

  8. Internet and electronic resources for inflammatory bowel disease: a primer for providers and patients.

    Science.gov (United States)

    Fortinsky, Kyle J; Fournier, Marc R; Benchimol, Eric I

    2012-06-01

    Patients with inflammatory bowel disease (IBD) are increasingly turning to the Internet to research their condition and engage in discourse on their experiences. This has resulted in new dynamics in the relationship between providers and their patients, with misinformation and advertising potentially presenting barriers to the cooperative patient-provider partnership. This article addresses important issues of online IBD-related health information and social media activity, such as quality, reliability, objectivity, and privacy. We reviewed the medical literature on the quality of online information provided to IBD patients, and summarized the most commonly accessed Websites related to IBD. We also assessed the activity on popular social media sites (such as Facebook, Twitter, and YouTube), and evaluated currently available applications for use by IBD patients and providers on mobile phones and tablets. Through our review of the literature and currently available resources, we developed a list of recommended online resources to strengthen patient participation in their care by providing reliable, comprehensive educational material. PMID:22147497

  9. Tunneling rate in double quantum dots

    Science.gov (United States)

    Filikhin, Igor; Matinyan, Sergei; Vlahovic, Branislav

    2014-03-01

    We study spectral properties of electron tunneling in double quantum dots (DQDs) (and double quantum wells (DQWs)) and their relation to the geometry. In particular we compare the tunneling in DQW with chaotic and regular geometry, taking into account recent evidence about regularization of the tunneling rate when the QW geometry is chaotic. Our calculations do not support this assumption. We confirm high influence of the QW geometry boundaries on the rate fluctuation along the spectrum. The factors of the effective mass anisotropy and violation of the symmetry of DQD and DQW are also considered. Generally, we found that the small violation of the symmetry drastically affects tunneling. This work is supported by the NSF (HRD-0833184) and NASA (NNX09AV07A).

  10. Oxide-supported metals with molecular structures: Evidence of the metal-oxygen bond from Raman and inelastic electron tunneling spectra of [Re(CO){ in3}{OMG}{HOMg} 2] and [Re(CO) 3{OAl}{HOAl} 2

    Science.gov (United States)

    Kirlin, P. S.; Dethomas, F. A.; Bailey, J. W.; Moller, K.; Gold, H. S.; Dybowski, C.; Gates, B. C.

    1986-09-01

    Raman and inelastic electron tunneling spectra of the anchored rhenium complexes [Re(CO){ in3}{OMG}{HOMg} 2] and [Re(CO) 3{OAl}{HOAl} 2] are reported, providing the first vibrational spectroscopic evidence of the metal-oxygen bond in mononuclear oxide-bound organometallic complexes.

  11. Oxide-supported metals with molecular structures: Evidence of the metal-oxygen bond from Raman and inelastic electron tunneling spectra of [Re(CO) 3{O-MG}{HO-Mg} 2] and [Re(CO) 3{O-Al}{HO-Al} 2

    Science.gov (United States)

    Kirlin, P. S.; Dethomas, F. A.; Bailey, J. W.; Moller, K.; Gold, H. S.; Dybowski, C.; Gates, B. C.

    Raman and inelastic electron tunneling spectra of the anchored rhenium complexes [Re(CO) 3{O-Mg}{HO-Mg} 2] and [Re(CO) 3{O-Al}{HO-Al} 2] are reported, providing the first vibrational spectroscopic evidence of the metal-oxygen bond in mononuclear oxide-bound organometallic complexes.

  12. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  13. Spin-polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

    Science.gov (United States)

    Schebaum, Oliver; Fabretti, Savio; Moodera, Jagadeesh S.; Thomas, Andy

    2012-03-01

    We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons was determined using the Maki-Fulde model and is discussed along with the spin-orbit scattering and the total pair-breaking parameters. The junctions were post-annealed at different temperatures to investigate the symmetry filtering mechanism responsible for the giant tunneling magnetoresistance ratios in Co-Fe-B/MgO/Co-Fe-B junctions.

  14. Uncertainty analysis of tunnel squeezing for two tunnel cases from Nepal Himalaya

    Energy Technology Data Exchange (ETDEWEB)

    Panthi, K.K.; Nilsen, B. [Norwegian University of Science and Technology, Trondheim (Norway). Department of Geology and Mineral Resources Engineering

    2007-01-15

    Weak rocks such as shale, slate, phyllite and schist, and the rock mass of weakness/fault zones are incapable of sustaining high tangential stress. Severe tunnel squeezing is therefore common in the tectonically active Himalayan rock mass is one of the major areas of concern regarding stability. A reliable prediction of the extent of squeezing is essential so that a strategy can be established regarding stabilizing measures and for optimizing the support well in advance (during planning and design). In this paper, a probabilistic approach to uncertainty analysis that focuses on the effect of the variation in each input parameter of squeezing is used for analyzing and predicting the extent of tunnel squeezing for two tunnel cases in Nepal; Kalingandaki 'A' (completed) and Middle Marsyangdi (under construction). A semi-analytical method suggested by Hoek and Marinos [Predicting tunnel squeezing problems in weak heterogeneous rock masses. Tunnels Tunnell Int, 2000; 32(11 and 12): 45-51 and 34-36] for predicting squeezing, an empirical formula proposed by Panthi [Analysis of engineering geological uncertainties related to tunnelling in Himalayan rock mass conditions. PhD thesis, Department of Geology and Mineral Resources Engineering. Norwegian University of Science and Technology (NTNU), Norway, 2006] and the Palisade's 2002 version of 'At' Risk statistical software program have been used for the uncertainty analysis. The analysis results for Kaligandaki indicate fairly good correlation between predicted and actually measured squeezing. The same approach has been used for predicting the degree of tunnel squeezing at Middle Marsyangdi tunnel. It is concluded that the methodology proposed in this paper has potential for predicting the squeezing of future tunnel projects in weak rock mass conditions. (author)

  15. Complex tunneling dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Yang, C.-D. [Department of Aeronautics and Astronautics, National Cheng Kung University, Tainan 701, Taiwan (China)]. E-mail: cdyang@mail.ncku.edu.tw

    2007-04-15

    Tunneling dynamics and tunneling trajectories are modeled exactly by complex-extended Hamilton-Jacobi formulation in this paper. It is found that the wave-like properties of tunneling particles, such as reflection, refraction, and transmission resonance, can be identified and explained in terms of particle's motion in complex space with the tunneling time defined as the usual sense of classical time. Following the complex trajectories determined by the complex Hamilton equations of motion, we can connect classical trajectories smoothly with tunneling trajectories using position and velocity continuity at the interface of the media, locate the particle's position at any instant, and find the time spent by a particle within the potential. A microscopic tunneling model is also developed to explain the probabilistic nature why a particle with the same incident conditions sometimes transmits the potential and sometimes is reflected from the potential.

  16. Resonance Enhanced Tunneling

    CERN Document Server

    Matsumoto, S; Matsumoto, Sh.

    2000-01-01

    Time evolution of tunneling in thermal medium is examined using the real-time semiclassical formalism previously developed. Effect of anharmonic terms in the potential well is shown to give a new mechanism of resonance enhanced tunneling. If the friction from environment is small enough, this mechanism may give a very large enhancement for the tunneling rate. The case of the asymmetric wine bottle potential is worked out in detail.

  17. DIRECT TIP STRUCTURES DETERMINATION BY SCANNING TUNNELING MICROSCOPY

    OpenAIRE

    GarcÍa CantÚ, R.; Huerta Garnica, M.

    1989-01-01

    An electrochemical etched scanning tunneling microscope tip is studied, using a long scan tunneling microscope and scanning electron microscopy, in order to characterize the neighborhood of the tip apex. Observed microstructure and protrusions are discussed in relation to chemical etching and mechanical resistance.

  18. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  19. Electronic and geometric properties of Au nanoparticles on Highly Ordered Pyrolytic Graphite (HOPG) studied using X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM).

    Science.gov (United States)

    Lopez-Salido, Ignacio; Lim, Dong Chan; Dietsche, Rainer; Bertram, Nils; Kim, Young Dok

    2006-01-26

    Au nanoparticles grown on mildly sputtered Highly Ordered Pyrolytic Graphite (HOPG) surfaces were studied using Scanning Tunneling Microscopy (STM) and X-ray Photoelectron Spectroscopy (XPS). The results were compared with those of Ag nanoparticles on the same substrate. By varying the defect densities of HOPG and the Au coverages, one can create Au nanoparticles in various sizes. At high Au coverages, the structures of the Au films significantly deviate from the ideal truncated octahedral form: the existence of many steps between different Au atomic layers can be observed, most likely due to a high activation barrier of the diffusion of Au atoms across the step edges. This implies that the particle growth at room temperature is strongly limited by kinetic factors. Hexagonal shapes of Au structures could be identified, indicating preferential growth of Au nanostructures along the (111) direction normal to the surface. In the case of Au, XPS studies reveal a weaker core level shift with decreasing particle size compared to the 3d level in similarly sized Ag particles. Also taking into account the Auger analysis of the Ag particles, the core level shifts of the metal nanoparticles on HOPG can be understood in terms of the metal/substrate charge transfer. Ag is (partially) positively charged, whereas Au negatively charged on HOPG. It is demonstrated that XPS can be a useful tool to study metal-support interactions, which plays an important role for heterogeneous catalysis, for example.

  20. Gate-controlled resonant interband tunneling in silicon

    International Nuclear Information System (INIS)

    We present gate-controlled resonant interband tunneling on silicon . The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped δp+ layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages

  1. High temperature coefficient of resistance for a ferroelectric tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolin; Tian, Bobo; Liu, Bolu; Wang, Xudong; Huang, Hai [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China); University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049 (China); Wang, Jianlu, E-mail: jlwang@mail.sitp.ac.cn, E-mail: xjmeng@mail.sitp.ac.cn; Zou, Yuhong; Sun, Shuo; Lin, Tie; Han, Li; Sun, Jinglan; Meng, Xiangjian, E-mail: jlwang@mail.sitp.ac.cn, E-mail: xjmeng@mail.sitp.ac.cn; Chu, Junhao [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China)

    2015-08-10

    An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

  2. The excitation energy spectrum for a system with electron pairs tunneling in a two-leg ladder has a doping depended gap

    CERN Document Server

    Voroshilov, Valentin

    2016-01-01

    A new model with a new Hamiltonian and a new canonical transformation is offered as the means for studying properties of a system of strongly correlated electrons. Consideration of the simplest possible situation, namely a system on non-interacting electrons in a two-leg ladder, leads to an expression for the excitation energy spectrum with no energy gap at the half-filling and with an energy gap away from the half filling.

  3. Tunnel modeling with BIM tools

    OpenAIRE

    Saje, Samo

    2014-01-01

    Graduation thesis deals with the process of tunnel modeling with the use of BIM tools and shows the development of libraries and families for tunnels for Revit software environment. In the first part of the thesis the process of design and construction of tunnels is presented, various tunnel construction methods and typical structure of road tunnels are described with an emphasis on the new Austrian method (NATM). The tunnel design process is broken down into individual phases, while the ...

  4. Effect of tunnel structure on the specific capacitance of etched aluminum foil

    Institute of Scientific and Technical Information of China (English)

    Ning Peng; Li-Bo Liang; Ye-Dong He; Hong-Zhou Song; Xiao-Fei Yang; Xiao-Yu Cai

    2014-01-01

    The morphology of etched aluminum foil was observed using scanning electron microscopy, which led to the establishment of a cylindrical model and two merged models, considering the fixed weight loss of etching. The maximum of specific capacitance and the cor-responding optimum values for tunnel sizes at various anodization voltages were predicted. The increased size distribution and taper of tun-nels were demonstrated to decrease the specific capacitance, whereas the addition of polymeric additive into the tunnel widening solution was demonstrated to increase the capacitance. The formation of merged tunnels on the etched aluminum surface, irrespective of the presence of row-merged tunnels or cluster-merged tunnels, resulted in a dramatic decrease in the specific capacitance. It is concluded that, enhancing the uniformity of tunnel size and distribution and avoiding the formation of merged tunnels are the effective approach to achieving the higher capacitance for the tunnel etched and formed aluminum foil.

  5. Green Supply Chain Collaboration for Fashionable Consumer Electronics Products under Third-Party Power Intervention—A Resource Dependence Perspective

    Directory of Open Access Journals (Sweden)

    Jiuh-Biing Sheu

    2014-05-01

    Full Text Available Under third-party power intervention (TPPI, which increases uncertainty in task environments, complex channel power interplays and restructuring are indispensable among green supply chain members as they move toward sustainable collaborative relationships for increased viability and competitive advantage. From the resource dependence perspective, this work presents a novel conceptual model to investigate the influence of political and social power on channel power restructuring and induced green supply chain collaboration in brander-retailer bidirectional green supply chains of fashionable consumer electronics products (FCEPs. An FCEP refers to the consumer electronics product (e.g., personal computers, mobile phones, computer notebooks, and game consoles with the features of a well-known brand associated, a short product lifecycle, timely and fashionable design fit for market trends, and quick responsiveness to the variations of market demands. The proposed model is tested empirically using questionnaire data obtained from retailers in the FCEP brander-retailer distribution channels. Analytical results reveal that as an extension of political and social power, TPPI positively affects the reciprocal interdependence of dyadic members and reduces power asymmetry, thereby enhancing the collaborative relationship of dyadic members and leading to improved green supply chain performance. Therein, reciprocal interdependence underlying collaborative relationship is the key to reducing the external environmental uncertainties in the TPPI context.

  6. Salecker-Wigner-Peres quantum clock applied to strong-field tunnel ionization

    CERN Document Server

    Teeny, Nicolas; Bauke, Heiko

    2016-01-01

    The Salecker-Wigner-Peres quantum-clock approach is applied in order to determine the tunneling time of an electron in strong-field tunnel ionization via a time-dependent electric field. Our results show that the ionization of the electron takes a nonvanishing period of time. This tunneling time is of the order of the Keldysh time but strictly larger than the Keldysh time. Comparing the quantum-clock tunneling time to the mean tunneling time as obtained by the virtual-detector approach, one finds that these two complementary methods give very similar results. Due to the asymmetric distribution of the tunneling time, there is a nonnegligible discrepancy between the mean tunneling time and the most probable tunneling time.

  7. Reliability assessment of tunneling flow charts

    International Nuclear Information System (INIS)

    When driving horizontal workings of different kinds it is typical to reserve excessive redundant equipment. However, the lack of resources (facilities, people) and poor management don't ensure goal achievement [3]. The paper presents reliability assessment method of tunneling with the help of mathematical modeling. The mathematical model is developed on the basis of factual data of tunneling conditions and no-failure operation probabilities of the flow chart elements are estimated. The method of reliability assessment allows identifying organizational, technological and technical elements of the reserves to increases drive efficiency and improve feasibility characteristics

  8. Reliability assessment of tunneling flow charts

    Science.gov (United States)

    Antropova, N. A.; Krets, V. G.; Luk'yanov, V. G.; Baranova, A. V.

    2015-02-01

    When driving horizontal workings of different kinds it is typical to reserve excessive redundant equipment. However, the lack of resources (facilities, people) and poor management don't ensure goal achievement [3]. The paper presents reliability assessment method of tunneling with the help of mathematical modeling. The mathematical model is developed on the basis of factual data of tunneling conditions and no-failure operation probabilities of the flow chart elements are estimated. The method of reliability assessment allows identifying organizational, technological and technical elements of the reserves to increases drive efficiency and improve feasibility characteristics.

  9. Carpal Tunnel Surgery

    Medline Plus

    Full Text Available ... carpal tunnel syndrome. At this point in time, we have the patient under anesthesia. We have the hand prepped. Great. And then, the ... the carpal tunnel, and it’s the ligament that we incise to release the carpal canal. The carpal ...

  10. Theory of dissociative tunneling ionization

    CERN Document Server

    Svensmark, Jens; Madsen, Lars Bojer

    2016-01-01

    We present a theoretical study of the dissociative tunneling ionization process. Analytic expressions for the nuclear kinetic energy distribution of the ionization rates are derived. A particularly simple expression for the spectrum is found by using the Born-Oppenheimer (BO) approximation in conjunction with the reflection principle. These spectra are compared to exact non-BO ab initio spectra obtained through model calculations with a quantum mechanical treatment of both the electronic and nuclear degrees freedom. In the regime where the BO approximation is applicable imaging of the BO nuclear wave function is demonstrated to be possible through reverse use of the reflection principle, when accounting appropriately for the electronic ionization rate. A qualitative difference between the exact and BO wave functions in the asymptotic region of large electronic distances is shown. Additionally the behavior of the wave function across the turning line is seen to be reminiscent of light refraction. For weak fiel...

  11. ‘I’ll just Google it!’: Should lawyers’ perceptions of Google inform the design of electronic legal resources?

    OpenAIRE

    Makri, S.; Blandford, A.; Cox, A. L.

    2007-01-01

    Lawyers, like many user groups, regularly use Google to find information for their work. We present results of a series of interviews with academic and practicing lawyers, where they discuss in what situations they use various electronic resources and why. We find lawyers use Google due to a variety of factors, many of which are related to the need to find information quickly. Lawyers also talk about Google with a certain affection not demonstrated when discussing other resources. Although we...

  12. Tunnel fire dynamics

    CERN Document Server

    Ingason, Haukur; Lönnermark, Anders

    2015-01-01

    This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

  13. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO2/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO2/FGNPA junction also drastically enhances TMR ratios up to ∼100%

  14. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  15. Laser Tunnel Ionization from Multiple Orbitals in HCl

    Science.gov (United States)

    Akagi, H.; Otobe, T.; Staudte, A.; Shiner, A.; Turner, F.; Dörner, R.; Villeneuve, D. M.; Corkum, P. B.

    2009-09-01

    Tunneling, one of the most striking manifestations of quantum mechanics, influences the electronic structure of many molecules and solids and is responsible for radioactive decay. Much of the interaction of intense light pulses with matter commences with electrons tunneling from atoms or molecules to the continuum. Until recently, this starting point was assumed to be the highest occupied orbital of a given system. We have now observed tunneling from a lower-lying state in hydrogen chloride (HCl). Analyzing two independent experimental observables allowed us to isolate (via fragment ions), identify (via molecular frame photoelectron angular distributions), and, with the help of ab initio simulations, quantify the contribution of lower-lying orbitals to the total and angle-dependent tunneling current of the molecule. Our results bolster the emerging tenet that the coherent interaction between different orbitals—which can amplify the impact of lower orbitals—must be considered in tunneling processes.

  16. A Student-Built Scanning Tunneling Microscope

    Science.gov (United States)

    Ekkens, Tom

    2015-01-01

    Many introductory and nanotechnology textbooks discuss the operation of various microscopes including atomic force (AFM), scanning tunneling (STM), and scanning electron microscopes (SEM). In a nanotechnology laboratory class, students frequently utilize microscopes to obtain data without a thought about the detailed operation of the tool itself.…

  17. Dihydroazulene photoswitch operating in sequential tunneling regime

    DEFF Research Database (Denmark)

    Broman, Søren Lindbæk; Lara-Avila, Samuel; Thisted, Christine Lindbjerg;

    2012-01-01

    to electrodes so that the electron transport goes by sequential tunneling. To assure weak coupling, the DHA switching kernel is modified by incorporating p-MeSC6H4 end-groups. Molecules are prepared by Suzuki cross-couplings on suitable halogenated derivatives of DHA. The synthesis presents an expansion of our...

  18. Zero field spin polarization in a 2D paramagnetic resonant tunneling diode

    OpenAIRE

    Rüth, M; Gould, C.; Molenkamp, L. W.

    2010-01-01

    We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is hi...

  19. Millikelvin cooling by heavy-fermion-based tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Prest, Martin; Min, Gao, E-mail: Min@cardiff.ac.uk [School of Engineering, Cardiff University, Cardiff CF24 3AA (United Kingdom); Whall, Terry [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2015-12-28

    This paper addresses a high-performance electron-tunneling cooler based on a novel heavy-fermion/insulator/superconductor junction for millikelvin cooling applications. We show that the cooling performance of an electronic tunneling refrigerator could be significantly improved using a heavy-fermion metal to replace the normal metal in a conventional normal metal/insulator/superconductor junction. The calculation, based on typical parameters, indicates that, for a bath temperature of 300 mK, the minimum cooling temperature of an electron tunneling refrigerator is reduced from around 170 mK to below 50 mK if a heavy-fermion metal is employed in place of the normal metal. The improved cooling is attributed to an enhancement in electron tunneling due to the existence of a resonant density of states at the Fermi level.

  20. Survey on User Satisfaction of Electronic Resources in University Libraries%高校图书馆电子资源用户满意度调查

    Institute of Scientific and Technical Information of China (English)

    陈姚竹; 马东

    2011-01-01

    通过分析影响用户对图书馆电子资源利用的因素,以美国顾客满意度指数模型为基础,提出关于各个因素的测量指标,对高校图书馆电子资源用户满意度进行测量。%Through analyzing the influencing factors on utilizing library electronic resources, based on the model of American customer satisfaction index, the paper puts forward corresponding measurement indexes, and then measures the user satisfaction on electronic resources of university library

  1. Tunneling magnetoresistive heads for magnetic data storage.

    Science.gov (United States)

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  2. Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode

    International Nuclear Information System (INIS)

    Resonant tunneling of electrons is thoroughly studied in in-plane magnetic fields. Anticrossing is revealed in a spectrum of two-dimensional electrons at energies of optical phonons. The magnetic field changes the momentum of tunneling electrons and causes a voltage shift of a resonance in the tunnel spectra in accordance with the electron dispersion curve. Anticrossing is clearly observed in second derivative current-voltage characteristics of a resonant tunneling diode made of a double-barrier Al0.4Ga0.6As/GaAs heterostructure.

  3. Electrons

    International Nuclear Information System (INIS)

    Fast electrons are used to produce isotopes for studying the cooper metabolism: Cu-64 in a cyclotron and Cu-67 in a linear accelerator. Localized electrons are responsible for the chemical and physiological characteristics of the trace elements. Studied are I, Cu, Co, Zn, Mo, Mn, Fe, Se, Mg. The Cu/Mo and Cu/Zn interactions are investigated. The levels of molybdenum, sulfate and zinc in the food are analysed. The role of the electrons in free radicals is discussed. The protection action of peroxidases and super oxidases against electron dangerous effect on normal physiology is also considered. Calculation of radiation damage and radiation protection is made. (author)

  4. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-12-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

  5. Insights into electron tunneling across hydrogen-bonded base-pairs in complete molecular circuits for single-stranded DNA sequencing

    OpenAIRE

    Lee, Myeong H.; Sankey, Otto F.

    2009-01-01

    We report a first-principles study of electron ballistic transport through a molecular junction containing deoxycytidine-monophosphate (dCMP) connected to metal electrodes. A guanidinium ion and guanine nucleobase are tethered to gold electrodes on opposite sides to form hydrogen bonds with the dCMP molecule providing an electric circuit. The circuit mimics a component of a potential device for sequencing unmodified single-stranded DNA. The molecular conductance is obtained from DFT Green’s f...

  6. Innovative direct energy conversion systems using electronic adiabatic processes of electron fluid in solid conductors: new plants of electrical power and hydrogen gas resources without environmental pollutions

    Energy Technology Data Exchange (ETDEWEB)

    Kondoh, Y.; Kondo, M.; Shimoda, K.; Takahashi, T. [Gunma Univ., Dept. of Electronic Engineering, Kiryu, Gunma (Japan)

    2001-07-01

    It is shown that using a novel recycling process of the environmental thermal energy, innovative permanent auto-working direct energy converter systems (PA-DEC systems) from the environmental thermal to electrical and/or chemical potential (TE/CP) energies, abbreviated as PA-TE/CP-DEC systems, can be used for new auto-working electrical power plants and the plants of the compressible and conveyable hydrogen gas resources at various regions in the whole world, with contributions to the world peace and the economical development in the south part of the world. It is shown that the same physical mechanism by free electrons and electrical potential determined by temperature in conductors, which include semiconductors, leads to the Peltier effect and the Seebeck one. It is experimentally clarified that the long distance separation between two {pi} type elements of the heat absorption (HAS) and the production one (HPS) of the Peltier effect circuit system or between the higher temperature side (HTS) and the lower one (LTS) of the Seebeck effect circuit one does not change in the whole for the both effects. By using present systems, we do not need to use petrified fuels such as coals, oils, and natural gases in order to decrease the greenhouse effect by the CO{sub 2} surrounding the earth. Furthermore, we do not need plats of nuclear fissions that left radiating wastes, i.e., with no environmental pollutions. The PA-TE/CP-DEC systems can be applicable for several km scale systems to the micro ones, such as the plants of the electrical power, the compact transportable hydrogen gas resources, a large heat energy container, which can be settled at far place from thermal energy absorbing area, the refrigerators, the air conditioners, home electrical apparatuses, and further the computer elements. It is shown that the simplest PA-TE/CP-DEC system can be established by using only the Seebeck effect components and the resolving water ones. It is clarified that the externally

  7. Development of an electronic medical record based alert for risk of HIV treatment failure in a low-resource setting.

    Directory of Open Access Journals (Sweden)

    Nancy Puttkammer

    Full Text Available BACKGROUND: The adoption of electronic medical record systems in resource-limited settings can help clinicians monitor patients' adherence to HIV antiretroviral therapy (ART and identify patients at risk of future ART failure, allowing resources to be targeted to those most at risk. METHODS: Among adult patients enrolled on ART from 2005-2013 at two large, public-sector hospitals in Haiti, ART failure was assessed after 6-12 months on treatment, based on the World Health Organization's immunologic and clinical criteria. We identified models for predicting ART failure based on ART adherence measures and other patient characteristics. We assessed performance of candidate models using area under the receiver operating curve, and validated results using a randomly-split data sample. The selected prediction model was used to generate a risk score, and its ability to differentiate ART failure risk over a 42-month follow-up period was tested using stratified Kaplan Meier survival curves. RESULTS: Among 923 patients with CD4 results available during the period 6-12 months after ART initiation, 196 (21.2% met ART failure criteria. The pharmacy-based proportion of days covered (PDC measure performed best among five possible ART adherence measures at predicting ART failure. Average PDC during the first 6 months on ART was 79.0% among cases of ART failure and 88.6% among cases of non-failure (p<0.01. When additional information including sex, baseline CD4, and duration of enrollment in HIV care prior to ART initiation were added to PDC, the risk score differentiated between those who did and did not meet failure criteria over 42 months following ART initiation. CONCLUSIONS: Pharmacy data are most useful for new ART adherence alerts within iSanté. Such alerts offer potential to help clinicians identify patients at high risk of ART failure so that they can be targeted with adherence support interventions, before ART failure occurs.

  8. Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

    Science.gov (United States)

    Weng, Qian-Chun; An, Zheng-Hua; Hou, Ying; Zhu, Zi-Qiang

    2013-04-01

    InAs quantum dots are introduced into resonant tunneling diodes to study the electronic transport behavior, and a wide bistability (ΔV ~ 0.8 V) is observed in the negative differential resistance region. Based on an analytic model, we attribute the observed distinct bistability of a resonant tunneling diodes with quantum dots to the feedback dependence of energy of the electron-storing quantum dots on the tunneling current density. Meanwhile, we find that this wide bistable region can be modulated sensitively by light illumination and becomes narrower with increasing light intensity. Our results suggest that the present devices can be potentially used as sensitive photodetectors in optoelectronic fields.

  9. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  10. The aeolian wind tunnel

    Science.gov (United States)

    Iversen, J. D.

    1991-01-01

    The aeolian wind tunnel is a special case of a larger subset of the wind tunnel family which is designed to simulate the atmospheric surface layer winds to small scale (a member of this larger subset is usually called an atmospheric boundary layer wind tunnel or environmental wind tunnel). The atmospheric boundary layer wind tunnel is designed to simulate, as closely as possible, the mean velocity and turbulence that occur naturally in the atmospheric boundary layer (defined as the lowest portion of the atmosphere, of the order of 500 m, in which the winds are most greatly affected by surface roughness and topography). The aeolian wind tunnel is used for two purposes: to simulate the physics of the saltation process and to model at small scale the erosional and depositional processes associated with topographic surface features. For purposes of studying aeolian effects on the surface of Mars and Venus as well as on Earth, the aeolian wind tunnel continues to prove to be a useful tool for estimating wind speeds necessary to move small particles on the three planets as well as to determine the effects of topography on the evolution of aeolian features such as wind streaks and dune patterns.

  11. Resonant tunneling in graphene pseudomagnetic quantum dots.

    Science.gov (United States)

    Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro

    2013-06-12

    Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

  12. 圖書館事業專欄/Marketing of Electronic Information Resources: A Case of The J.D. Rockefeller Research Library, Egerton University/Nerisa Kamar

    OpenAIRE

    Nerisa Kamar

    2008-01-01

    This paper gives a brief overview of electronic information resources and services offered by The J.D. Rockefeller Research Library at Egerton University and the marketing of these resources. The paper examines the various reasons for marketing electronic information resources, with emphasis on the various, and illustrates marketing strategies used by J.D Rockefeller Research library towards effective utilization of the available resources in supporting research, teaching and learnin...

  13. Adsorption and deposition of anthraquinone-2-carboxylic acid on alumina studied by inelastic electron tunneling spectroscopy, infrared reflection absorption spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Higo, Morihide [Department of Applied Chemistry and Chemical Engineering, Faculty of Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065 (Japan)], E-mail: higo@apc.kagoshima-u.ac.jp; Miake, Takeshi; Mitsushio, Masaru; Yoshidome, Toshifumi [Department of Applied Chemistry and Chemical Engineering, Faculty of Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065 (Japan); Ozono, Yoshihisa [Center for Instrumental analysis, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065 (Japan)

    2008-04-30

    The adsorption state of anthraquinone-2-carboxylic acid (AQ-2-COOH) deposited from acetone solutions (0.01-1.00 mg/ml) on native oxide surfaces of Al films was characterized by inelastic electron tunneling spectroscopy, infrared reflection absorption spectroscopy, and X-ray photoelectron spectroscopy. The oxide was prepared on evaporated Al films at room temperature in an oxygen-dc glow discharge. The morphology of the deposited AQ-2-COOH on the oxide surfaces was observed and analyzed by atomic force microscopy. These surface analyses showed that AQ-2-COOH is adsorbed predominantly as a uniform nanometer-scale film of carboxylate anions on the oxide surfaces deposited from solutions with concentrations lower than or equal to 0.02 mg/ml. It was found that AQ-2-COOH is adsorbed as both a uniform film of anions and as micron-sized particles of neutral molecules with heights of a few tens of nanometers when AQ-2-COOH is deposited from solutions with concentrations higher than 0.02 mg/ml. A comparison of the results obtained by these surface analytical techniques clearly shows the features and advantages of these analytical techniques.

  14. Adsorption and deposition of anthraquinone-2-carboxylic acid on alumina studied by inelastic electron tunneling spectroscopy, infrared reflection absorption spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy

    International Nuclear Information System (INIS)

    The adsorption state of anthraquinone-2-carboxylic acid (AQ-2-COOH) deposited from acetone solutions (0.01-1.00 mg/ml) on native oxide surfaces of Al films was characterized by inelastic electron tunneling spectroscopy, infrared reflection absorption spectroscopy, and X-ray photoelectron spectroscopy. The oxide was prepared on evaporated Al films at room temperature in an oxygen-dc glow discharge. The morphology of the deposited AQ-2-COOH on the oxide surfaces was observed and analyzed by atomic force microscopy. These surface analyses showed that AQ-2-COOH is adsorbed predominantly as a uniform nanometer-scale film of carboxylate anions on the oxide surfaces deposited from solutions with concentrations lower than or equal to 0.02 mg/ml. It was found that AQ-2-COOH is adsorbed as both a uniform film of anions and as micron-sized particles of neutral molecules with heights of a few tens of nanometers when AQ-2-COOH is deposited from solutions with concentrations higher than 0.02 mg/ml. A comparison of the results obtained by these surface analytical techniques clearly shows the features and advantages of these analytical techniques

  15. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    Science.gov (United States)

    Dai, Jian-Qing

    2016-08-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO3/Fe multiferroic tunnel junction with asymmetric TiO2- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6pz orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  16. Charting a Course through CORAL: Texas A&M University Libraries' Experience Implementing an Open-Source Electronic Resources Management System

    Science.gov (United States)

    Hartnett, Eric; Beh, Eugenia; Resnick, Taryn; Ugaz, Ana; Tabacaru, Simona

    2013-01-01

    In 2010, after two previous unsuccessful attempts at electronic resources management system (ERMS) implementation, Texas A&M University (TAMU) Libraries set out once again to find an ERMS that would fit its needs. After surveying the field, TAMU Libraries selected the University of Notre Dame Hesburgh Libraries-developed, open-source ERMS, CORAL…

  17. Scanning Tunneling Spectroscope Use in Electrocatalysis Testing

    Directory of Open Access Journals (Sweden)

    Turid Knutsen

    2010-06-01

    Full Text Available The relationship between the electrocatalytic properties of an electrode and its ability to transfer electrons between the electrode and a metallic tip in a scanning tunneling microscope (STM is investigated. The alkaline oxygen evolution reaction (OER was used as a test reaction with four different metallic glasses, Ni78Si8B14, Ni70Mo20Si5B5, Ni58Co20Si10B12, and Ni25Co50Si15B10, as electrodes. The electrocatalytic properties of the electrodes were determined. The electrode surfaces were then investigated with an STM. A clear relationship between the catalytic activity of an electrode toward the OER and its tunneling characteristics was found. The use of a scanning tunneling spectroscope (STS in electrocatalytic testing may increase the efficiency of the optimization of electrochemical processes.

  18. Tunneling spectra of graphene on copper unraveled

    DEFF Research Database (Denmark)

    Zhang, Xin; Stradi, Daniele; Liu, Lei;

    2016-01-01

    of the variability in tunneling spectra is the variation in graphene-substrate coupling under various experimental conditions, providing a salutary perspective on the important role of 2D material-substrate interactions. The conclusions are drawn from measured data and theoretical calculations for monolayer, AB......Scanning tunneling spectroscopy is often employed to study two-dimensional (2D) materials on conductive growth substrates, in order to gain information on the electronic structures of the 2D material-substrate systems, which can lead to insight into 2D material-substrate interactions, growth...... mechanisms, etc. The interpretation of the spectra can be complicated, however. Specifically for graphene grown on copper, there have been conflicting reports of tunneling spectra. A clear understanding of the mechanisms behind the variability is desired. In this work, we have revealed that the root cause...

  19. SKB - PNC. Development of tunnel radar antennas

    International Nuclear Information System (INIS)

    Tunnel antennas for the RAMAC borehole radar system have been developed and tested in the field. The antennas are of the loaded dipole type and the receiver and transmitter electronics have been rebuilt to screen them from the antennas. A series of measurements has demonstrated that the radar pulse is short and well shaped and relatively free from ringing, even compared with the existing borehole antennas. Two antenna sets were tested: one centered at 60 MHz and another above 100 MHz. Both produced excellent radar pictures when tested in tunnels in Stripa mine. The antennas have been designed to be easy to carry, since the signal quality often depends on the way the antenna is held relative to electric conductors in the tunnels. (au) (46 figs., 57 refs.)

  20. Spin Tunneling in Conducting Oxides

    OpenAIRE

    Bratkovsky, Alexander

    1997-01-01

    Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems leads to about a 30% change in resistance, which is close to experimentally observed values. It is shown that the larger observed values of the TMR might be a result of tunneling involving surface polarized states. We find that tunneling via resonant defect sta...

  1. Carpal Tunnel Surgery

    Medline Plus

    Full Text Available ... of carpal tunnel syndrome. At this point in time, we have the patient under anesthesia. We have ... and is not visible over a period of time. You can barely see a surgical scar. My ...

  2. Carpal Tunnel Surgery

    Medline Plus

    Full Text Available ... tunnel pass the tendons and the nerves. So, right beneath this ligament is going to be the ... and it’s actually beneath this bridge of skin right in here. So, I’ve incised this ligament ...

  3. Water Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...

  4. Wind Tunnel Testing Facilities

    Data.gov (United States)

    Federal Laboratory Consortium — NASA Ames Research Center is pleased to offer the services of our premier wind tunnel facilities that have a broad range of proven testing capabilities to customers...

  5. INCAS TRISONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Florin MUNTEANU

    2009-09-01

    Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

  6. Tunnel Engineering Construction Schedule Analysis and Management Based on Visual Simulation

    Institute of Scientific and Technical Information of China (English)

    SONG Yang; ZHONG Wei

    2007-01-01

    The methodology of visual simulation for a tunnel engineering construction schedule is presented. Visualization of simulation model, calculation and result of construction schedule simulation is realized, and the construction simulation and the resource optimization of tunnel engineering are made. A risk analysis and a decision-making method of tunnel engineering construction schedule based on visual simulation are presented. Furthermore, using S curve theory and schedule management method, the real-time management and control method of tunnel engineering construction based on visual simulation is presented. The application to the tunnel engineering construction schedule analysis and management shows the feasibility and effectiveness of the method presented in this paper.

  7. On tunneling across horizons

    OpenAIRE

    Vanzo, Luciano

    2011-01-01

    The tunneling method for stationary black holes in the Hamilton-Jacobi variant is reconsidered in the light of various critiques that have been moved against. It is shown that once the tunneling trajectories have been correctly identified the method isfree from internal inconsistencies, it is manifestly covariant, it allows for the extension to spinning particles and it can even be used without solving the Hamilton-Jacobi equation. These conclusions borrow support on a simple analytic continu...

  8. Tunnelling in organic superconductors

    OpenAIRE

    Bolech, C. J.; Giamarchi, T.

    2005-01-01

    We discuss the possibility of deciding on the symmetry of the superconducting phase in the organic superconductors (Bechgaard salts), using tunnelling experiments. We first briefly review the properties of organic superconductors, and the possibility to have unconventional (triplet) superconductivity in these systems. We then present a simple scheme for computing the full current-voltage characteristics for tunnelling experiments within the framework of the non-equilibrium Keldysh Green funct...

  9. Temperature stratification in tunnels

    OpenAIRE

    Nyman, Hans; Ingason, Haukur

    2012-01-01

    An investigation of previously established correlations between gas temperature distribution and smoke stratification in mines has been carried out for tunnel applications. The investigated correlations are based on excess gas temperature ratios and Froude number scaling. This paper describes a comparison between two large scale tests carried out in a road tunnel and two well defined model scale tests. In each of the tests, a longitudinal flow was maintained. The temperature data obtained at ...

  10. Pair Tunneling through Single Molecules

    Science.gov (United States)

    Raikh, Mikhail

    2007-03-01

    Coupling to molecular vibrations induces a polaronic shift, and can lead to a negative charging energy, U. For negative U, the occupation of the ground state of the molecule is even. In this situation, virtual pair transitions between the molecule and the leads can dominate electron transport. At low temperature, T, these transitions give rise to the charge-Kondo effect [1]. We developed the electron transport theory through the negative-U molecule [2] at relatively high T, when the Kondo correlations are suppressed. Two physical ingredients distinguish our theory from the transport through a superconducting grain coupled to the normal leads [3]: (i) in parallel with sequential pair-tunneling processes, single-particle cotunneling processes take place; (ii) the electron pair on the molecule can be created (or annihilated) by two electrons tunneling in from (or out to) opposite leads. We found that, even within the rate-equation description, the behavior of differential conductance through the negative-U molecule as function of the gate voltage is quite peculiar: the height of the peak near the degeneracy point is independent of temperature, while its width is proportional to T. This is in contrast to the ordinary Coulomb-blockade conductance peak, whose integral strength is T-independent. At finite source-drain bias, V>>T, the width of the conductance peak is ˜V, whereas the conventional Coulomb-blockade peak at finite V splits into two sharp peaks at detunings V/2, and -V/2. Possible applications to the gate-controlled current rectification and switching will be discussed. [1] A. Taraphder and P. Coleman, Phys. Rev. Lett. 66, 2814 (1991). [2] J. Koch, M. E. Raikh, and F. von Oppen, Phys. Rev. Lett. 96, 056803 (2006). [3] F. W. J. Hekking, L. I. Glazman, K. A. Matveev, and R. I. Shekhter, Phys. Rev. Lett. 70, 4138 (1993).

  11. Graphene-based magnetic tunnel junctions

    Science.gov (United States)

    Cobas, Enrique

    2013-03-01

    Graphene's in-plane transport has been widely researched and has yielded extraordinary carrier mobilities of 105 cm2/Vs and spin diffusion lengths of exceeding 100 μm. These properties bode well for graphene in future electronics and spintronics technologies. Its out-of-plane transport has been far less studied, although its parent material, graphite, shows a large conductance anisotropy. Recent calculations show graphene's interaction with close-packed ferromagnetic metal surfaces should produce highly spin-polarized transport out-of-plane, an enabling breakthrough for spintronics technology. In this work, we fabricate and measure FM/graphene/FM magnetic tunnel junctions using CVD-grown single-layer graphene. The resulting juctions show non-linear current-voltage characteristics and a very weak temperature dependence consistent with charge tunneling transport. Furthermore, we study spin transport across the junction as a function of bias voltage and temperature. The tunneling magnetoresistance (TMR) peaks at two percent for single-layer graphene junctions and exhibits the expected bias asymmetry and a temperature dependence that fits well with established spin-polarized tunneling models. Results of mutli-layer graphene tunnel junctions will also be discussed.

  12. Gravity Tunnel Drag

    CERN Document Server

    Concannon, Thomas

    2016-01-01

    The time it takes to fall down a tunnel through the center of the Earth to the other side takes approximately 42 minutes, but only when given several simplifying assumptions: a uniform density Earth; a gravitational field that varies linearly with radial position; a non-rotating Earth; a tunnel evacuated of air; and zero friction along the sides of the tunnel. Though several papers have singularly relaxed the first three assumptions, in this paper we relax the final two assumptions and analyze the motion of a body experiencing these types of drag forces in the tunnel. Under such drag forces, we calculate the motion of a transport vehicle through a tunnel of the Earth under uniform density, under constant gravitational acceleration, and finally under the more realistic Preliminary Reference Earth Model (PREM) density data. We find the density profile corresponding to a constant gravitational acceleration better models the motion through the tunnel compared to the PREM density profile, and the uniform density m...

  13. Tunnelling of a molecule

    International Nuclear Information System (INIS)

    A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times tH and tBL, with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e-iω(t+Δt) , Δt = tH - itBL. A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia

  14. Numerical wind tunnels

    CERN Document Server

    Souza, Paulo Victor Santos

    2015-01-01

    Flow of viscous fluids are not usually discussed in detail in general and basic courses of physics. This is due in part to the fact that the Navier-Stokes equation has analytical solution only for a few restricted cases, while more sophisticated problems can only be solved by numerical methods. In this text, we present a computer simulation of wind tunnel, i.e., we present a set of programs to solve the Navier-Stokes equation for an arbitrary object inserted in a wind tunnel. The tunnel enables us to visualize the formation of vortices behind object, the so-called von K\\'arm\\'an vortices, and calculate the drag force on the object. We believe that this numerical wind tunnel can support the teacher and allow a more elaborate discussion of viscous flow. The potential of the tunnel is exemplified by the study of the drag on a simplified model of wing whose angle of attack can be controlled. A link to download the programs that make up the tunnel appears at the end.

  15. Quantum Tunneling Current in Nanoscale Plasmonic Junctions

    Science.gov (United States)

    Zhang, Peng; Lau, Y. Y.; Gilgenbach, R. M.

    2014-10-01

    Recently, electron tunneling between plasmonic resonators is found to support quantum plasmon resonances, which may introduce new regimes in nano-optoelectronics and nonlinear optics. This revelation is of substantial interest to the fundamental problem of electron transport in nano-scale, for example, in a metal-insulator-metal junction (MIM), which has been continuously studied for decades. Here, we present a self-consistent model of electron transport in a nano-scale MIM, by solving the coupled Schrödinger and Poisson equations. The effects of space charge, exchange-correlation, anode emission, and material properties of the electrodes and insulator are examined in detail. The self-consistent calculations are compared with the widely used Simmons formula. Transition from the direct tunneling regime to the space-charge-limited regime is demonstrated. This work was supported by AFOSR.

  16. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes, E.

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  17. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  18. Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field

    Science.gov (United States)

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E.; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation.

  19. Optical electronics

    Science.gov (United States)

    Javan, A.

    1976-01-01

    The development of an optical diode consisting of a metal-dielectric-metal junction in which the high-speed electric conduction process occurs due to quantum mechanical electron tunneling across the dielectric barrier is briefly reviewed. Potential applications of the diode are discussed.

  20. A Study on the Model for Resources Matching of Electronic Bartering%电子易货资源匹配模型研究

    Institute of Scientific and Technical Information of China (English)

    吴剑云; 张嵩

    2012-01-01

    By exchanging idle goods and services, electronic bartering can help enterprises solve dull sale problems, shortage of funds, overstocks and other problems without sufficient cash. Relying on the Internet and the e-commerce platform, electronic bartering removes the traditional bartering limitations, greatly expands the trading object and range, improves the transaction efficiency, and provides additional channels for economic development. How to promote more successful barters among multiple barterers? A key factor is the matching of barter resources. Focusing on the automatic matching of resources in the electronic barter, this paper proposes a network model to help maximize resources matching and provide recommendation information for barter participants, thereby raising the transaction rate and making the barter market prosperous.According to the type and quantity of barter resources, barter market can be divided into two types. In the first type, the supply and demand of the barter market is related to the same type of resources and each barterer owns only one type of resource. In the second type, the supply and demand of the barter market is linked to many types of resources and each barterer owns multiple resources to be exchanged. The first case has been resolved in the relevant document by using the graph theory to solve digraph circuits. This paper is interested in studying the second type of barter. Suppose the barter market has m barterers and n resources. Each barterer owns diverse types of barter resources, and is interested in other types of resources. The barterer a will provide other barterers his own resources only if he gets the resources he needs from the barterer b. Note that each of the bartered resource is regarded as having equal value to any other resources. The main objective is to maximize the number of resources that are bartered.Next, this paper proposes a math model of automatic resources matching by systematically analyzing resource