WorldWideScience

Sample records for tunnelling devices integrated

  1. Highly functional tunnelling devices integrated in 3D

    DEFF Research Database (Denmark)

    Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter

    2003-01-01

    a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used......We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use...

  2. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Science.gov (United States)

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  3. Phase-quantum tunnel device

    International Nuclear Information System (INIS)

    Sugahara, M.; Ando, N.; Kaneda, H.; Nagai, M.; Ogawa, Y.; Yoshikawa, N.

    1985-01-01

    Theoretical and Experimental study on granular superconductors shows that they are classified into two groups; fixed-phase superconductor (theta-superconductor) and fixed-pair-number superconductor (N-superconductor) and that a new macroscopic quantum device with conjugate property to Josephson effect can be made by use of N-superconductors

  4. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  5. Operating modes of superconducting tunnel junction device

    Energy Technology Data Exchange (ETDEWEB)

    Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

    1998-07-01

    In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

  6. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    Science.gov (United States)

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  7. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  8. Magnetic tunnel junction device having an intermediate layer

    NARCIS (Netherlands)

    2001-01-01

    A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

  9. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2005-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  10. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2000-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  11. NEW SCANNING DEVICE FOR SCANNING TUNNELING MICROSCOPE APPLICATIONS

    NARCIS (Netherlands)

    SAWATZKY, GA; Koops, Karl Richard

    A small, single piezo XYZ translator has been developed. The device has been used as a scanner for a scanning tunneling microscope and has been tested successfully in air and in UHV. Its simple design results in a rigid and compact scanning unit which permits high scanning rates.

  12. Integrated control rod monitoring device

    International Nuclear Information System (INIS)

    Saito, Katsuhiro

    1997-01-01

    The present invention provides a device in which an entire control rod driving time measuring device and a control rod position support device in a reactor building and a central control chamber are integrated systematically to save hardwares such as a signal input/output device and signal cables between boards. Namely, (1) functions of the entire control rod driving time measuring device for monitoring control rods which control the reactor power and a control rod position indication device are integrated into one identical system. Then, the entire devices can be made compact by the integration of the functions. (2) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated in a central operation board and a board in the site. Then, the place for the installation of them can be used in common in any of the cases. (3) The functions of the entire control rod driving time measuring device and the control rod position indication device are integrated to one identical system to save hardware to be used. Then, signal input/output devices and drift branching panel boards in the site and the central operation board can be saved, and cables for connecting both of the boards is no more necessary. (I.S.)

  13. Path integral approach to multidimensional quantum tunnelling

    International Nuclear Information System (INIS)

    Balantekin, A.B.; Takigawa, N.

    1985-01-01

    Path integral formulation of the coupled channel problem in the case of multidimensional quantum tunneling is presented and two-time influence functionals are introduced. The two-time influence functionals are calculated explicitly for the three simplest cases: Harmonic oscillators linearly or quadratically coupled to the translational motion and a system with finite number of equidistant energy levels linearly coupled to the translational motion. The effects of these couplings on the transmission probability are studied for two limiting cases, adiabatic case and when the internal system has a degenerate energy spectrum. The condition for the transmission probability to show a resonant structure is discussed and exemplified. Finally, the properties of the dissipation factor in the adiabatic limit and its correlation with the friction coefficient in the classically accessible region are studied

  14. Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

    Science.gov (United States)

    Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

    1991-01-01

    A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

  15. Integrated tunneling sensor for nanoelectromechanical systems

    DEFF Research Database (Denmark)

    Sadewasser, S.; Abadal, G.; Barniol, N.

    2006-01-01

    Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small...... distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based...... on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. (c) 2006 American Institute of Physics....

  16. Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

    NARCIS (Netherlands)

    van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

    2015-01-01

    Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

  17. Extended wearing trial of Trifield lens device for 'tunnel vision'.

    Science.gov (United States)

    Woods, Russell L; Giorgi, Robert G; Berson, Eliot L; Peli, Eli

    2010-05-01

    Severe visual field constriction (tunnel vision) impairs the ability to navigate and walk safely. We evaluated Trifield glasses as a mobility rehabilitation device for tunnel vision in an extended wearing trial. Twelve patients with tunnel vision (5-22 degrees wide) due to retinitis pigmentosa or choroideremia participated in the 5-visit wearing trial. To expand the horizontal visual field, one spectacle lens was fitted with two apex-to-apex prisms that vertically bisected the pupil on primary gaze. This provides visual field expansion at the expense of visual confusion (two objects with the same visual direction). Patients were asked to wear these spectacles as much as possible for the duration of the wearing trial (median 8, range 6-60 weeks). Clinical success (continued wear, indicating perceived overall benefit), visual field expansion, perceived direction and perceived visual ability were measured. Of 12 patients, nine chose to continue wearing the Trifield glasses at the end of the wearing trial. Of those nine patients, at long-term follow-up (35-78 weeks), three reported still wearing the Trifield glasses. Visual field expansion (median 18, range 9-38 degrees) was demonstrated for all patients. No patient demonstrated adaptation to the change in visual direction produced by the Trifield glasses (prisms). For reported difficulty with obstacles, some differences between successful and non-successful wearers were found. Trifield glasses provided reported benefits in obstacle avoidance to 7 of the 12 patients completing the wearing trial. Crowded environments were particularly difficult for most wearers. Possible reasons for long-term discontinuation and lack of adaptation to perceived direction are discussed.

  18. Integrated Ultrasonic-Photonic Devices

    DEFF Research Database (Denmark)

    Barretto, Elaine Cristina Saraiva

    in channel waveguides and Mach-Zehnder interferometers. Numerical models are developed based on the finite element method, and applied to several scenarios, such as optimization of the geometrical parameters of waveguides, use of slow light in photonic crystal waveguides and use of Lamb waves in membranized......This thesis deals with the modeling, design, fabrication and characterization of integrated ultrasonic-photonic devices, with particular focus on the use of standard semiconductor materials such as GaAs and silicon. The devices are based on the use of guided acoustic waves to modulate the light...... investigated. Comparisons are made with the numerical and experimental results, and they validate the obtained response of the acoustic and photonic components of the device. Finally, a new design for an optical frequency shifter is proposed, posing several advantages over existing devices in terms of size...

  19. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  20. Integrated lenses in polystyrene microfluidic devices

    KAUST Repository

    Fan, Yiqiang; Li, Huawei; Foulds, Ian G.

    2013-01-01

    This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were

  1. Integrity inspection of main access tunnel using ground penetrating radar

    Science.gov (United States)

    Ismail, M. A.; Abas, A. A.; Arifin, M. H.; Ismail, M. N.; Othman, N. A.; Setu, A.; Ahmad, M. R.; Shah, M. K.; Amin, S.; Sarah, T.

    2017-11-01

    This paper discusses the Ground Penetrating Radar (GPR) survey performed to determine the integrity of wall of tunnel at a hydroelectric power generation facility. GPR utilises electromagnetic waves that are transmitted into the medium of survey. Any reflectors in the medium will reflect the transmitted waves and picked up by the GPR antenna. The survey was done using MALA GeoScience RAMAC CUII with 250MHz antenna. Survey was done on the left, the crown and the right walls of the underground tunnels. Distance was measured using wheel encoders. The results of the survey is discussed in this paper.

  2. Process and device for producing a timber gear case for tunnels and mines

    Energy Technology Data Exchange (ETDEWEB)

    Foik, A

    1977-09-08

    A device is described for producing a timber gear case for tunnels and mines. Plank shaped pillars, partly overlapping one another are driven in parallel planes at an angle to the tunnel axis, close together and advancing relative to the face. The pillars are taken through supports erected one after the other in the longitudinal direction of the tunnel, and are supported. The process can be extended by producing a timber gear case to secure any type of underground space. The process produces further mechanisation of tunnelling and mining and also ensures greater safety for the miners.

  3. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  4. Magnitude of the current in 2D interlayer tunneling devices.

    Science.gov (United States)

    Feenstra, Randall M; de la Barrera, Sergio C; Li, Jun; Nie, Yifan; Cho, Kyeongjae

    2018-01-15

    Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15×  larger than experimental values. A reduction in this discrepancy, to a factor of 2.5×, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling.

  5. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  6. Integration Research on Gas Turbine and Tunnel Kiln Combined System

    Science.gov (United States)

    Shi, Hefei; Ma, Liangdong; Liu, Mingsheng

    2018-04-01

    Through the integrated modeling of gas turbine and tunnel kiln combined system, a thermodynamic calculation method of combined system is put forward, and the combined system operation parameters are obtained. By this method, the optimization of the combined system is analyzed and the optimal configuration of the gas turbine is calculated. At the same time, the thermal efficiency of the combined system is analyzed, and the heat distribution and thermal efficiency of the system before and after the improvement are explained. Taking the 1500 kg/h ceramic production as an example, pointed out that if the tunnel kiln has a gas turbine with a power of 342 kw. The amount of electricity of the combined system that produced per unit volume of the fuel which consumes more than it used to will be 7.19 kwh, the system thermal efficiency will reach 57.49%, which higher than the individual gas turbine’s cycle thermal efficiency 20% at least.

  7. Circular polarization in a non-magnetic resonant tunneling device

    Directory of Open Access Journals (Sweden)

    Airey Robert

    2011-01-01

    Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

  8. Large resistance change on magnetic tunnel junction based molecular spintronics devices

    Science.gov (United States)

    Tyagi, Pawan; Friebe, Edward

    2018-05-01

    Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

  9. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Science.gov (United States)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  10. Integrated lenses in polystyrene microfluidic devices

    KAUST Repository

    Fan, Yiqiang

    2013-04-01

    This paper reports a new method for integrating microlenses into microfluidic devices for improved observation. Two demonstration microfluidic devices were provided which were fabricated using this new technique. The integrated microlenses were fabricated using a free-surface thermo-compression molding method on a polystyrene (PS) sheet which was then bonded on top of microfluidic channels as a cover plate, with the convex microlenses providing a magnified image of the channel for the easier observation of the flow in the microchannels. This approach for fabricating the integrated microlens in microfluidic devices is rapid, low cost and without the requirement of cleanroom facilities. © 2013 IEEE.

  11. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  12. Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    Science.gov (United States)

    Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

    2007-01-01

    We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

  13. Atomic layer deposition for graphene device integration

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

    2017-01-01

    Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

  14. Toward an Integrated Optical Data System for Wind Tunnel Testing

    National Research Council Canada - National Science Library

    Ruyten, Wim

    1999-01-01

    ...) of the test article in a wind tunnel test. The theory for such P&A determinations is developed and applied to data from a recent pressure sensitive paint test in AEDC's 16 ft transonic wind tunnel...

  15. Radiation damage assessment of Nb tunnel junction devices

    International Nuclear Information System (INIS)

    King, S.E.; Magno, R.; Maisch, W.G.

    1991-01-01

    This paper reports on the radiation hardness of a new technology using Josephson junctions that was explored by an irradiation using a fluence of 7.6 x 10 14 protons/cm 2 at an energy of 63 MeV from the U.C. Davis cyclotron. In what the authors believe is the first radiation assessment of Nb/Al 2 O 3 /Nb devices, the permanent damage in these devices was investigated. No permanent changes in the I-V characteristics of the junctions were observed indicating no significant level of material defects have occurred at this level of irradiation

  16. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

    Science.gov (United States)

    Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

    2018-06-01

    This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

  17. Fabrication of tunnel junction-based molecular electronics and spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan

    2012-01-01

    Tunnel junction-based molecular devices (TJMDs) are highly promising for realizing futuristic electronics and spintronics devices for advanced logic and memory operations. Under this approach, ∼2.5 nm molecular device elements bridge across the ∼2-nm thick insulator of a tunnel junction along the exposed side edge(s). This paper details the efforts and insights for producing a variety of TJMDs by resolving multiple device fabrication and characterization issues. This study specifically discusses (i) compatibility between tunnel junction test bed and molecular solutions, (ii) optimization of the exposed side edge profile and insulator thickness for enhancing the probability of molecular bridging, (iii) effect of fabrication process-induced mechanical stresses, and (iv) minimizing electrical bias-induced instability after the device fabrication. This research will benefit other researchers interested in producing TJMDs efficiently. TJMD approach offers an open platform to test virtually any combination of magnetic and nonmagnetic electrodes, and promising molecules such as single molecular magnets, porphyrin, DNA, and molecular complexes.

  18. High performance bio-integrated devices

    Science.gov (United States)

    Kim, Dae-Hyeong; Lee, Jongha; Park, Minjoon

    2014-06-01

    In recent years, personalized electronics for medical applications, particularly, have attracted much attention with the rise of smartphones because the coupling of such devices and smartphones enables the continuous health-monitoring in patients' daily life. Especially, it is expected that the high performance biomedical electronics integrated with the human body can open new opportunities in the ubiquitous healthcare. However, the mechanical and geometrical constraints inherent in all standard forms of high performance rigid wafer-based electronics raise unique integration challenges with biotic entities. Here, we describe materials and design constructs for high performance skin-mountable bio-integrated electronic devices, which incorporate arrays of single crystalline inorganic nanomembranes. The resulting electronic devices include flexible and stretchable electrophysiology electrodes and sensors coupled with active electronic components. These advances in bio-integrated systems create new directions in the personalized health monitoring and/or human-machine interfaces.

  19. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  20. Tunnel splitting in biaxial spin models investigated with spin-coherent-state path integrals

    International Nuclear Information System (INIS)

    Chen Zhide; Liang, J.-Q.; Pu, F.-C.

    2003-01-01

    Tunnel splitting in biaxial spin models is investigated with a full evaluation of the fluctuation functional integrals of the Euclidean kernel in the framework of spin-coherent-state path integrals which leads to a magnitude of tunnel splitting quantitatively comparable with the numerical results in terms of diagonalization of the Hamilton operator. An additional factor resulted from a global time transformation converting the position-dependent mass to a constant one seems to be equivalent to the semiclassical correction of the Lagrangian proposed by Enz and Schilling. A long standing question whether the spin-coherent-state representation of path integrals can result in an accurate tunnel splitting is therefore resolved

  1. Integrated multiscale modeling of molecular computing devices

    International Nuclear Information System (INIS)

    Cummings, Peter T; Leng Yongsheng

    2005-01-01

    Molecular electronics, in which single organic molecules are designed to perform the functions of transistors, diodes, switches and other circuit elements used in current siliconbased microelecronics, is drawing wide interest as a potential replacement technology for conventional silicon-based lithographically etched microelectronic devices. In addition to their nanoscopic scale, the additional advantage of molecular electronics devices compared to silicon-based lithographically etched devices is the promise of being able to produce them cheaply on an industrial scale using wet chemistry methods (i.e., self-assembly from solution). The design of molecular electronics devices, and the processes to make them on an industrial scale, will require a thorough theoretical understanding of the molecular and higher level processes involved. Hence, the development of modeling techniques for molecular electronics devices is a high priority from both a basic science point of view (to understand the experimental studies in this field) and from an applied nanotechnology (manufacturing) point of view. Modeling molecular electronics devices requires computational methods at all length scales - electronic structure methods for calculating electron transport through organic molecules bonded to inorganic surfaces, molecular simulation methods for determining the structure of self-assembled films of organic molecules on inorganic surfaces, mesoscale methods to understand and predict the formation of mesoscale patterns on surfaces (including interconnect architecture), and macroscopic scale methods (including finite element methods) for simulating the behavior of molecular electronic circuit elements in a larger integrated device. Here we describe a large Department of Energy project involving six universities and one national laboratory aimed at developing integrated multiscale methods for modeling molecular electronics devices. The project is funded equally by the Office of Basic

  2. Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

    Science.gov (United States)

    Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S.; Desai, Dhruv K.; Rodgers, Griffin F.; Bradley, Aaron J.; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F.

    2015-01-01

    Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene’s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices. PMID:26273961

  3. Plated lamination structures for integrated magnetic devices

    Science.gov (United States)

    Webb, Bucknell C.

    2014-06-17

    Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

  4. Use of an augmented-vision device for visual search by patients with tunnel vision.

    Science.gov (United States)

    Luo, Gang; Peli, Eli

    2006-09-01

    To study the effect of an augmented-vision device that superimposes minified contour images over natural vision on visual search performance of patients with tunnel vision. Twelve subjects with tunnel vision searched for targets presented outside their visual fields (VFs) on a blank background under three cue conditions (with contour cues provided by the device, with auditory cues, and without cues). Three subjects (VF, 8 degrees -11 degrees wide) carried out the search over a 90 degrees x 74 degrees area, and nine subjects (VF, 7 degrees -16 degrees wide) carried out the search over a 66 degrees x 52 degrees area. Eye and head movements were recorded for performance analyses that included directness of search path, search time, and gaze speed. Directness of the search path was greatly and significantly improved when the contour or auditory cues were provided in the larger and the smaller area searches. When using the device, a significant reduction in search time (28% approximately 74%) was demonstrated by all three subjects in the larger area search and by subjects with VFs wider than 10 degrees in the smaller area search (average, 22%). Directness and gaze speed accounted for 90% of the variability of search time. Although performance improvement with the device for the larger search area was obvious, whether it was helpful for the smaller search area depended on VF and gaze speed. Because improvement in directness was demonstrated, increased gaze speed, which could result from further training and adaptation to the device, might enable patients with small VFs to benefit from the device for visual search tasks.

  5. Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

    Science.gov (United States)

    Zhu, Mengjian; Luo, Wei; Wu, Nannan; Zhang, Xue-ao; Qin, Shiqiao

    2018-04-01

    2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ˜1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors.

  6. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  7. Medical device integration using mobile telecommunications infrastructure.

    Science.gov (United States)

    Moorman, Bridget A; Cockle, Richard A

    2013-01-01

    Financial pressures, an aging population, and a rising number of patients with chronic diseases, have encouraged the use of remote monitoring technologies. This usually entails at least one physiological parameter measurement for a clinician. Mobile telecommunication technologies lend themselves to this functionality, and in some cases, avoid some of the issues encountered with device integration. Moreover, the inherent characteristics of the mobile telecommunications infrastructure allow a coupling of business and clinical functions that were not possible before. Table I compares and contrasts some key aspect of device integration in and out of a healthcare facility. An HTM professional may be part of the team that acquires and/or manages a system using a mobile telecommunications technology. It is important for HTM professionals to ensure the data is in a standard format so that the interfaces across this system don't become brittle and break easily if one part changes. Moreover, the security and safety considerations of the system and the data should be a primary consideration in and y purchase, with attention given to the proper environmental and encryption mechanisms. Clinical engineers and other HTM professionals are unique in that they understand the patient/clinician/device interface and the need to ensure its safety and effectiveness regardless of geographical environment.

  8. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    International Nuclear Information System (INIS)

    Kao, Kuo-Hsing; De Meyer, Kristin; Verhulst, Anne S.; Van de Put, Maarten; Soree, Bart; Magnus, Wim; Vandenberghe, William G.

    2014-01-01

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10 6 for V DD  = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge

  9. Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Hsing; De Meyer, Kristin [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven (Belgium); Verhulst, Anne S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Van de Put, Maarten; Soree, Bart; Magnus, Wim [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Physics, Universiteit Antwerpen, 2000 Antwerpen (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-01-28

    Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10{sup 6} for V{sub DD} = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge.

  10. Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

    Science.gov (United States)

    Song, Yipu; Schmitt, Andrew L; Jin, Song

    2008-08-01

    Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

  11. Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

    Science.gov (United States)

    Bescond, M.; Logoteta, D.; Michelini, F.; Cavassilas, N.; Yan, T.; Yangui, A.; Lannoo, M.; Hirakawa, K.

    2018-02-01

    We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green’s function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.

  12. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Science.gov (United States)

    Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

    2018-04-01

    Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

  13. The MMI Device Ontology: Enabling Sensor Integration

    Science.gov (United States)

    Rueda, C.; Galbraith, N.; Morris, R. A.; Bermudez, L. E.; Graybeal, J.; Arko, R. A.; Mmi Device Ontology Working Group

    2010-12-01

    The Marine Metadata Interoperability (MMI) project has developed an ontology for devices to describe sensors and sensor networks. This ontology is implemented in the W3C Web Ontology Language (OWL) and provides an extensible conceptual model and controlled vocabularies for describing heterogeneous instrument types, with different data characteristics, and their attributes. It can help users populate metadata records for sensors; associate devices with their platforms, deployments, measurement capabilities and restrictions; aid in discovery of sensor data, both historic and real-time; and improve the interoperability of observational oceanographic data sets. We developed the MMI Device Ontology following a community-based approach. By building on and integrating other models and ontologies from related disciplines, we sought to facilitate semantic interoperability while avoiding duplication. Key concepts and insights from various communities, including the Open Geospatial Consortium (eg., SensorML and Observations and Measurements specifications), Semantic Web for Earth and Environmental Terminology (SWEET), and W3C Semantic Sensor Network Incubator Group, have significantly enriched the development of the ontology. Individuals ranging from instrument designers, science data producers and consumers to ontology specialists and other technologists contributed to the work. Applications of the MMI Device Ontology are underway for several community use cases. These include vessel-mounted multibeam mapping sonars for the Rolling Deck to Repository (R2R) program and description of diverse instruments on deepwater Ocean Reference Stations for the OceanSITES program. These trials involve creation of records completely describing instruments, either by individual instances or by manufacturer and model. Individual terms in the MMI Device Ontology can be referenced with their corresponding Uniform Resource Identifiers (URIs) in sensor-related metadata specifications (e

  14. Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

    Science.gov (United States)

    Kim, Chang Soo

    The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

  15. Integrating nanosphere lithography in device fabrication

    Science.gov (United States)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  16. Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

    Science.gov (United States)

    Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

    2018-02-01

    In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

  17. Extended Wearing Trial of Trifield Lens Device for “Tunnel Vision”

    Science.gov (United States)

    Woods, Russell L.; Giorgi, Robert G.; Berson, Eliot L.; Peli, Eli

    2009-01-01

    Severe visual field constriction (tunnel vision) impairs the ability to navigate and walk safely. We evaluated Trifield glasses as a mobility rehabilitation device for tunnel vision in an extended wearing trial. Twelve patients with tunnel vision (5 to 22 degrees wide) due to retinitis pigmentosa or choroideremia participated in the 5-visit wearing trial. To expand the horizontal visual field, one spectacle lens was fitted with two apex-to-apex prisms that vertically bisected the pupil on primary gaze. This provides visual field expansion at the expense of visual confusion (two objects with the same visual direction). Patients were asked to wear these spectacles as much as possible for the duration of the wearing trial (median 8, range 6 to 60, weeks). Clinical success (continued wear, indicating perceived overall benefit), visual field expansion, perceived direction and perceived visual ability were measured. Of 12 patients, 9 chose to continue wearing the Trifield glasses at the end of the wearing trial. Of those 9 patients, at long-term follow-up (35 to 78 weeks), 3 reported still wearing the Trifield glasses. Visual field expansion (median 18, range 9 to 38, degrees) was demonstrated for all patients. No patient demonstrated adaptation to the change in visual direction produced by the Trifield glasses (prisms). For difficulty with obstacles, some differences between successful and non-successful wearers were found. Trifield glasses provided reported benefits in obstacle avoidance to 7 of the 12 patients completing the wearing trial. Crowded environments were particularly difficult for most wearers. Possible reasons for long-term discontinuation and lack of adaptation to perceived direction are discussed. PMID:20444130

  18. Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

    Science.gov (United States)

    Daniel, Erik Stephen

    In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

  19. In-plane tunnelling field-effecttransistor integrated on Silicon

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Apachitei, G.; Preziosi, D.; Deniz, H.; Kriegner, D.; Martí, Xavier; Alexe, M.

    2015-01-01

    Roč. 5, Sep (2015), s. 14367 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic devices * ferroelectrics and multiferroics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.228, year: 2015

  20. Morphing wing system integration with wind tunnel testing =

    Science.gov (United States)

    Guezguez, Mohamed Sadok

    Preserving the environment is a major challenge for today's aviation industry. Within this context, the CRIAQ MDO 505 project started, where a multidisciplinary approach was used to improve aircraft fuel efficiency. This international project took place between several Canadian and Italian teams. Industrial teams are Bombardier Aerospace, Thales Canada and Alenia Aermacchi. The academic partners are from Ecole de Technologie Superieure, Ecole Polytechnique de Montreal and Naples University. Teams from 'CIRA' and IAR-NRC research institutes had, also, contributed on this project. The main objective of this project is to improve the aerodynamic performance of a morphing wing prototype by reducing the drag. This drag reduction is achieved by delaying the flow transition (from laminar to turbulent) by performing shape optimization of the flexible upper skin according to different flight conditions. Four linear axes, each one actuated by a 'BLDC' motor, are used to morph the skin. The skin displacements are calculated by 'CFD' numerical simulation based on flow parameters which are Mach number, the angle of attack and aileron's angle of deflection. The wing is also equipped with 32 pressure sensors to experimentally detect the transition during aerodynamic testing in the subsonic wind tunnel at the IAR-NRC in Ottawa. The first part of the work is dedicated to establishing the necessary fieldbus communications between the control system and the wing. The 'CANopen' protocol is implemented to ensure real time communication between the 'BLDC' drives and the real-time controller. The MODBUS TCP protocol is used to control the aileron drive. The second part consists of implementing the skin control position loop based on the LVDTs feedback, as well as developing an automated calibration procedure for skin displacement values. Two 'sets' of wind tunnel tests were carried out to, experimentally, investigate the morphing wing controller effect; these tests also offered the

  1. Impact of device engineering on analog/RF performances of tunnel field effect transistors

    Science.gov (United States)

    Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

    2017-06-01

    The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

  2. Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization

    International Nuclear Information System (INIS)

    Surawanitkun, C.; Kaewrawang, A.; Siritaratiwat, A.; Kruesubthaworn, A.; Sivaratana, R.; Jutong, N.; Mewes, C.K.A.; Mewes, T.

    2015-01-01

    For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important factors that have to be considered simultaneously. In this article, we examined the minimum energy for STT induced magnetization switching in MTJ devices for different in-plane angles of the magnetization in the free layer and the pinned layer with respect to the major axis of the elliptical cylinder of the cell. Simulations were performed by comparing the analytical solution with macrospin and full micromagnetic calculations. The results show good agreement of the switching energy calculated by using the three approaches for different initial angles of the magnetization of the free layer. Also, the low-energy location specifies the suitable value of both time and current in order to reduce the heat effect during the switching process. - Highlights: • Switching energy model was firstly examined with tiled magnetization in STT-RAM. • Simulation was performed by analytical solution, macrospin and micromagnetic models. • Low energy results from three models show agreement for tilt angle in free layer. • We also found an optimal tilt angle of the pinned layer. • Low-energy location specifies the suitable switching location to reduce heat effect

  3. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  4. CMOS and BiCMOS process integration and device characterization

    CERN Document Server

    El-Kareh, Badih

    2009-01-01

    Covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. This book also covers silicon devices and integrated process technologies. It discusses modern silicon devices, their characteristics, and interactions with process parameters.

  5. Integration in design and manufacturing of polymer smart devices

    NARCIS (Netherlands)

    Bolt, P.J.; Zwart, R.M. de; Tacken, R.A.; Rendering, H.

    2009-01-01

    Integration of functions in single components is pursued in order to manufacture smaller and smarter polymer micro devices at less cost, through e.g. less assembly steps. It requires integration on both product and production side. This paper addresses the use of molded interconnect device (MID)

  6. NASA ERA Integrated CFD for Wind Tunnel Testing of Hybrid Wing-Body Configuration

    Science.gov (United States)

    Garcia, Joseph A.; Melton, John E.; Schuh, Michael; James, Kevin D.; Long, Kurt R.; Vicroy, Dan D.; Deere, Karen A.; Luckring, James M.; Carter, Melissa B.; Flamm, Jeffrey D.; hide

    2016-01-01

    NASAs Environmentally Responsible Aviation (ERA) Project explores enabling technologies to reduce aviations impact on the environment. One research challenge area for the project has been to study advanced airframe and engine integration concepts to reduce community noise and fuel burn. In order to achieve this, complex wind tunnel experiments at both the NASA Langley Research Centers (LaRC) 14x22 and the Ames Research Centers 40x80 low-speed wind tunnel facilities were conducted on a Boeing Hybrid Wing Body (HWB) configuration. These wind tunnel tests entailed various entries to evaluate the propulsion airframe interference effects including aerodynamic performance and aeroacoustics. In order to assist these tests in producing high quality data with minimal hardware interference, extensive Computational Fluid Dynamic (CFD) simulations were performed for everything from sting design and placement for both the wing body and powered ejector nacelle systems to the placement of aeroacoustic arrays to minimize its impact on the vehicles aerodynamics. This paper will provide a high level summary of the CFD simulations that NASA performed in support of the model integration hardware design as well as some simulation guideline development based on post-test aerodynamic data. In addition, the paper includes details on how multiple CFD codes (OVERFLOW, STAR-CCM+, USM3D, and FUN3D) were efficiently used to provide timely insight into the wind tunnel experimental setup and execution.

  7. Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

    Directory of Open Access Journals (Sweden)

    Hyung-Jong Lee

    2011-06-01

    Full Text Available Low-loss polymer materials incorporating fluorinated compounds have been utilized for the investigation of various functional optical devices useful for optical communication and optical sensor systems. Since reliability issues concerning the polymer device have been resolved, polymeric waveguide devices have been gradually adopted for commercial application systems. The two most successfully commercialized polymeric integrated optic devices, variable optical attenuators and digital optical switches, are reviewed in this paper. Utilizing unique properties of optical polymers which are not available in other optical materials, novel polymeric optical devices are proposed including widely tunable external cavity lasers and integrated optical current sensors.

  8. Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

    Energy Technology Data Exchange (ETDEWEB)

    Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

    2016-03-07

    We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

  9. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  10. Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors.

    Science.gov (United States)

    Liu, Fei; Wang, Jian; Guo, Hong

    2016-10-27

    Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 10 3 μA μm -1 with the fixed off-state current of 10 pA μm -1 . It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs.

  11. Simplified nonplanar wafer bonding for heterogeneous device integration

    Science.gov (United States)

    Geske, Jon; Bowers, John E.; Riley, Anton

    2004-07-01

    We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

  12. Integrating Sphere-based Weathering Device

    Data.gov (United States)

    Federal Laboratory Consortium — Description:In the artificial ultraviolet (UV) weathering of materials, a need exists for weathering devices that can uniformly illuminate test specimens with a high...

  13. Development of a process control computer device for the adaptation of flexible wind tunnel walls

    Science.gov (United States)

    Barg, J.

    1982-01-01

    In wind tunnel tests, the problems arise of determining the wall pressure distribution, calculating the wall contour, and controlling adjustment of the walls. This report shows how these problems have been solved for the high speed wind tunnel of the Technical University of Berlin.

  14. Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devices

    International Nuclear Information System (INIS)

    Ammendola, G.; Parlato, L.; Peluso, G.; Pepe, G.

    1998-01-01

    Tunnel quasi-particle injection into a superconducting film provides useful information on the non-equilibrium state inside the perturbed superconductor as well as on the potential application to electronic devices. Three terminal injector-detector superconducting devices have a long history in non-equilibrium superconductivity. In the recent past non-equilibrium phenomena have attracted again considerable attention because of many superconducting based detectors involve processes substantially non-equilibrium in nature. The possibility of using a stacked double tunnel junction to study the influence of non-equilibrium superconductivity on the Josephson critical current is now considered. An experimental study of the effect of quasi-particle injection on the Josephson current both in steady-state and pulsed experiments down to T=1.2 K is presented using 3 terminal Nb-based stacked double tunnel devices. The feasibility of a new class of particle detectors based on the direct measurement of the change in the Josephson current following the absorption of a X-ray quantum is also discussed in terms of non-equilibrium theories. (orig.)

  15. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  16. A method to design high SNR nanoscale magnetic sensors using an array of tunnelling magneto-resistance (TMR) devices

    International Nuclear Information System (INIS)

    Gomez, P; Litvinov, D; Khizroev, S

    2007-01-01

    This paper presents a systematic method to design and calculate tunnelling magneto-resistance (TMR) sensors with high signal-to-noise ratio (SNR). The sensing module consists of four TMR devices arranged in a Wheatstone-bridge configuration. Closed-form equations were obtained to calculate TMR sensor current, array output voltage, magneto-resistance ratio, overall noise (thermal and shot) and SNR for a given bandwidth. Using this technique we were able to maximize the SNR by tuning the many parameters of the TMR devices. Typical SNR values are in excess of 45 dB

  17. Development of an integrated pointing device driver for the disabled.

    Science.gov (United States)

    Shih, Ching-Hsiang; Shih, Ching-Tien

    2010-01-01

    To help people with disabilities such as those with spinal cord injury (SCI) to effectively utilise commercial pointing devices to operate computers. This study proposes a novel method to integrate the functions of commercial pointing devices. Utilising software technology to develop an integrated pointing device driver (IPDD) for a computer operating system. The proposed IPDD has the following benefits: (1) it does not require additional hardware cost or circuit preservations, (2) it supports all standard interfaces of commercial pointing devices, including PS/2, USB and wireless interfaces and (3) it can integrate any number of devices. The IPDD can be selected and combined according to their physical restriction. The IPDD is a novel method of integrating commercial pointing devices. Through IPDD, people with disabilities can choose a suitable combination of commercial pointing devices to achieve full cursor control and optimise operational performance. In contrast with previous studies, the software-based solution does not require additional hardware or circuit preservations, and it can support unlimited devices. In summary, the IPDD has the benefits of flexibility, low cost and high-device compatibility.

  18. Heterogeneous MEMS device assembly and integration

    Science.gov (United States)

    Topart, Patrice; Picard, Francis; Ilias, Samir; Alain, Christine; Chevalier, Claude; Fisette, Bruno; Paultre, Jacques E.; Généreux, Francis; Legros, Mathieu; Lepage, Jean-François; Laverdière, Christian; Ngo Phong, Linh; Caron, Jean-Sol; Desroches, Yan

    2014-03-01

    In recent years, smart phone applications have both raised the pressure for cost and time to market reduction, and the need for high performance MEMS devices. This trend has led the MEMS community to develop multi-die packaging of different functionalities or multi-technology (i.e. wafer) approaches to fabricate and assemble devices respectively. This paper reports on the fabrication, assembly and packaging at INO of various MEMS devices using heterogeneous assembly at chip and package-level. First, the performance of a giant (e.g. about 3 mm in diameter), electrostatically actuated beam steering mirror is presented. It can be rotated about two perpendicular axes to steer an optical beam within an angular cone of up to 60° in vector scan mode with an angular resolution of 1 mrad and a response time of 300 ms. To achieve such angular performance relative to mirror size, the microassembly was performed from sub-components fabricated from 4 different wafers. To combine infrared detection with inertial sensing, an electroplated proof mass was flip-chipped onto a 256×1 pixel uncooled bolometric FPA and released using laser ablation. In addition to the microassembly technology, performance results of packaged devices are presented. Finally, to simulate a 3072×3 pixel uncooled detector for cloud and fire imaging in mid and long-wave IR, the staggered assembly of six 512×3 pixel FPAs with a less than 50 micron pixel co-registration is reported.

  19. Device-quality tunnel junctions on the high Tc superconductor HgBa2CuO4+δ

    International Nuclear Information System (INIS)

    Zasadzinski, J.; Chen, J.; Romano, P.; Gray, K.E.; Wagner, J.L.; Hinks, D.G.

    1995-01-01

    SIN and SIS tunnel junction devices (e.g. photon detectors, logic elements) require quasiparticle characteristics that exhibit sharp current onsets at the gap voltage and very low sub-gap conductances. Progress is reported on the development of such junctions on High Tc cuprates using mechanical point contacts. In general, these contacts display the optimum characteristics that can be obtained from HTS native-surface tunnel barriers. Most cuprates display a sub-gap conductance which monotonically increases with voltage about the minimum value at zero bias. However, tunneling data of unusually high quality have been obtained for the recently discovered Hg-based cuprate, HgBa 2 CuO 4 (T c =96K). SIS' tunneling data using a Nb tip are presented which exhibit very low and flat sub-gap conductances and sharp conductance peaks as expected from a BCS density of states. These results are slightly improved over earlier published results with SIN junctions. Use of the experimental data to simulate the performance of a quasiparticle mixer demonstrates that noise temperatures approaching the quantum limit are possible for SIS and SIN mixers in the range 1-5 THz

  20. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius; Kodzius, Rimantas; Vanagas, Galius

    2013-01-01

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here

  1. Integration of Capacitive Micromachined Ultrasound Transducers to Microfluidic Devices

    KAUST Repository

    Viržonis, Darius

    2013-10-22

    The design and manufacturing flexibility of capacitive micromachined ultrasound transducers (CMUT) makes them attractive option for integration with microfluidic devices both for sensing and fluid manipulation. CMUT concept is introduced here by presentin

  2. Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

    International Nuclear Information System (INIS)

    Kang, S.H.; Lee, K.

    2013-01-01

    A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a dense array of nanometer-scale magnetic tunnel junctions. This emerging field is of growing scientific and engineering interest, owing to its potential to bring disruptive device innovation to the world of electronics. This technology is currently being pursued not only for scalable non-volatile spin-transfer-torque magnetoresistive random access memory, but also for various forms of non-volatile logic (Spin-Logic). This paper reviews recent advances in spintronic IC. Key discoveries and breakthroughs in materials and devices are highlighted in light of the broader perspective of their application in low-energy mobile computing and connectivity systems, which have emerged as leading drivers for the prevailing electronics ecosystem

  3. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo

    2013-02-13

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  4. Evaluation of polymer based third order nonlinear integrated optics devices

    NARCIS (Netherlands)

    Driessen, A.; Hoekstra, Hugo; Blom, F.C.; Horst, F.; Horst, F.; Krijnen, Gijsbertus J.M.; van Schoot, J.B.P.; van Schoot, J.B.P.; Lambeck, Paul; Popma, T.J.A.; Diemeer, Mart

    Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS

  5. Integration of semiconductor and ceramic superconductor devices for microwave applications

    NARCIS (Netherlands)

    Klopman, B.B.G.; Klopman, B.B.G.; Wijers, H.W.; Gao, J.; Gao, J.; Gerritsma, G.J.; Rogalla, Horst

    1991-01-01

    Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers,

  6. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo; Cojoc, G.; Bragheri, F.; Minzioni, P.; Perozziello, G.; La Rocca, R.; Ferrara, L.; Rajamanickam, V.; Di Fabrizio, Enzo M.; Cristiani, I.

    2013-01-01

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  7. Automatic Integration of IoT Devices

    OpenAIRE

    Pêgo, Pedro Ruben Januário

    2016-01-01

    During the last years a new concept has gained prominence in the technology world. With an increasingly dominant role in our days, Internet of Things (IoT) is a technological revolution that is changing our lives. The imagination is the limit for the new devices that may appear in the market. This phenomenon is derived from both, the technological evolution and the growing acceptance of this type of products in our social life. Faced with a fast growth, an increasing diversity ...

  8. Water Capture Device Signal Integration Board

    Science.gov (United States)

    Chamberlin, Kathryn J.; Hartnett, Andrew J.

    2018-01-01

    I am a junior in electrical engineering at Arizona State University, and this is my second internship at Johnson Space Center. I am an intern in the Command and Data Handling Branch of Avionics Division (EV2), my previous internship was also in EV2. During my previous internship I was assigned to the Water Capture Device payload, where I designed a prototype circuit board for the electronics system of the payload. For this internship, I have come back to the Water Capture Device project to further the work on the electronics design I completed previously. The Water Capture Device is an experimental payload to test the functionality of two different phase separators aboard the International Space Station (ISS). A phase separator sits downstream of a condensing heat exchanger (CHX) and separates the water from the air particles for environmental control on the ISS. With changing CHX technology, new phase separators are required. The goal of the project is to develop a test bed for the two phase separators to determine the best solution.

  9. Theory of tunneling in metal--superconductor devices: Supercurrents in the superconductor gap at zero temperature

    International Nuclear Information System (INIS)

    Garcia, N.; Flores, F.; Guinea, F.

    1988-01-01

    Tunneling experiments in metal-oxide superconductor have shown the existence of ''leakage'' currents for applied voltages V smaller than one-half of the superconductor gap Δ. These currents are independent of temperature T. Recently experiments with scanning tunneling microscopy (STM) and squeezable tunnel junctions have shown that the observation of the superconductor gap depends strongly on the resistance in the junction. In fact only for resistances larger than ∼10 6 Ω the gap is clearly observable. These experiments have been explained in terms of the perturbative Hamiltonian formalism of Bardeen. However, it may happen that this theory while applicable for very large resistances may not be so for small tunnel resistances. We present here a nonperturbative theory in all orders of the transmitivity chemical bondTochemical bond 2 and show the existence of supercurrents for values of V 2 . We believe that experiments in STM and other junctions should be interpreted in the frame of this theory

  10. Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices.

    Science.gov (United States)

    Feenstra, Randall; de la Barrera, Sergio; Li, Jun; Nie, Yifan; Cho, Kyeongjae

    2018-01-02

    Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15x larger than experimental values. A reduction in this discrepancy, to a factor of 2.5x, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling. © 2018 IOP Publishing Ltd.

  11. Structure factors for tunneling ionization rates of molecules: General Hartree-Fock-based integral representation

    Science.gov (United States)

    Madsen, Lars Bojer; Jensen, Frank; Dnestryan, Andrey I.; Tolstikhin, Oleg I.

    2017-07-01

    In the leading-order approximation of the weak-field asymptotic theory (WFAT), the dependence of the tunneling ionization rate of a molecule in an electric field on its orientation with respect to the field is determined by the structure factor of the ionizing molecular orbital. The WFAT yields an expression for the structure factor in terms of a local property of the orbital in the asymptotic region. However, in general quantum chemistry approaches molecular orbitals are expanded in a Gaussian basis which does not reproduce their asymptotic behavior correctly. This hinders the application of the WFAT to polyatomic molecules, which are attracting increasing interest in strong-field physics. Recently, an integral-equation approach to the WFAT for tunneling ionization of one electron from an arbitrary potential has been developed. The structure factor is expressed in an integral form as a matrix element involving the ionizing orbital. The integral is not sensitive to the asymptotic behavior of the orbital, which resolves the difficulty mentioned above. Here, we extend the integral representation for the structure factor to many-electron systems treated within the Hartree-Fock method and show how it can be implemented on the basis of standard quantum chemistry software packages. We validate the methodology by considering noble-gas atoms and the CO molecule, for which accurate structure factors exist in the literature. We also present benchmark results for CO2 and for NH3 in the pyramidal and planar geometries.

  12. Medical Device Integration Model Based on the Internet of Things

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  13. Integrated neuron circuit for implementing neuromorphic system with synaptic device

    Science.gov (United States)

    Lee, Jeong-Jun; Park, Jungjin; Kwon, Min-Woo; Hwang, Sungmin; Kim, Hyungjin; Park, Byung-Gook

    2018-02-01

    In this paper, we propose and fabricate Integrate & Fire neuron circuit for implementing neuromorphic system. Overall operation of the circuit is verified by measuring discrete devices and the output characteristics of the circuit. Since the neuron circuit shows asymmetric output characteristic that can drive synaptic device with Spike-Timing-Dependent-Plasticity (STDP) characteristic, the autonomous weight update process is also verified by connecting the synaptic device and the neuron circuit. The timing difference of the pre-neuron and the post-neuron induce autonomous weight change of the synaptic device. Unlike 2-terminal devices, which is frequently used to implement neuromorphic system, proposed scheme of the system enables autonomous weight update and simple configuration by using 4-terminal synapse device and appropriate neuron circuit. Weight update process in the multi-layer neuron-synapse connection ensures implementation of the hardware-based artificial intelligence, based on Spiking-Neural- Network (SNN).

  14. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  15. Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

    Science.gov (United States)

    Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

    2017-09-01

    In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

  16. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

    Directory of Open Access Journals (Sweden)

    Jun He

    2012-03-01

    Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.

  17. Video integrated measurement system. [Diagnostic display devices

    Energy Technology Data Exchange (ETDEWEB)

    Spector, B.; Eilbert, L.; Finando, S.; Fukuda, F.

    1982-06-01

    A Video Integrated Measurement (VIM) System is described which incorporates the use of various noninvasive diagnostic procedures (moire contourography, electromyography, posturometry, infrared thermography, etc.), used individually or in combination, for the evaluation of neuromusculoskeletal and other disorders and their management with biofeedback and other therapeutic procedures. The system provides for measuring individual diagnostic and therapeutic modes, or multiple modes by split screen superimposition, of real time (actual) images of the patient and idealized (ideal-normal) models on a video monitor, along with analog and digital data, graphics, color, and other transduced symbolic information. It is concluded that this system provides an innovative and efficient method by which the therapist and patient can interact in biofeedback training/learning processes and holds considerable promise for more effective measurement and treatment of a wide variety of physical and behavioral disorders.

  18. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  19. Integrated circuit devices in control systems of coal mining complexes

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    Systems of automatic monitoring and control of coal mining complexes developed in the 1960's used electromagnetic relays, thyristors, and flip-flops on transistors of varying conductivity. The circuits' designers, devoted much attention to ensuring spark safety, lowering power consumption, and raising noise immunity and repairability of functional devices. The fast development of integrated circuitry led to the use of microelectronic components in most devices of mine automation. An analysis of specifications and experimental research into integrated circuits (IMS) shows that the series K 176 IMS components made by CMOS technology best meet mine conditions of operation. The use of IMS devices under mine conditions has demonstrated their high reliability. Further development of integrated circuitry involve using microprocessors and microcomputers. (SC)

  20. Framework for the Integration of Mobile Device Features in PLM

    OpenAIRE

    Hopf, Jens Michael

    2016-01-01

    Currently, companies have covered their business processes with stationary workstations while mobile business applications have limited relevance. Companies can cover their overall business processes more time-efficiently and cost-effectively when they integrate mobile users in workflows using mobile device features. The objective is a framework that can be used to model and control business applications for PLM processes using mobile device features to allow a totally new user experience.

  1. Wind tunnel study of natural ventilation of building integrated photovoltaics double skin façade

    Directory of Open Access Journals (Sweden)

    Hudişteanu Sebastian Valeriu

    2018-01-01

    Full Text Available The paper presents a wind tunnel experimental analysis of a small-scale building model (1:30. The objective of the study is to determine the wind influence on the ventilation of a double skin façade channel (DSF and the cooling effect over integrated photovoltaic panels. The tests were achieved by conceiving and implementation of an experimental program using a wind tunnel with atmospheric boundary layer. The effect of the wind over the ventilation of the horizontal channels of double skin façades is evaluated for different incident velocities. The results are generalized for the average steady state values of the velocities analysed. The experimental results put in evidence the correlation between the reference wind velocity and the dynamics of the air movement inside the double skin façade. These values are used to determine the convective heat transfer and the cooling effect of the air streams inside the channel upon the integrated photovoltaic panels. The decrease of the photovoltaic panels temperature determines a raise of 11% in efficiency and power generated.

  2. Wind tunnel study of natural ventilation of building integrated photovoltaics double skin façade

    Science.gov (United States)

    Hudişteanu, Sebastian Valeriu; Popovici, Cătălin George; Cherecheş, Nelu-Cristian

    2018-02-01

    The paper presents a wind tunnel experimental analysis of a small-scale building model (1:30). The objective of the study is to determine the wind influence on the ventilation of a double skin façade channel (DSF) and the cooling effect over integrated photovoltaic panels. The tests were achieved by conceiving and implementation of an experimental program using a wind tunnel with atmospheric boundary layer. The effect of the wind over the ventilation of the horizontal channels of double skin façades is evaluated for different incident velocities. The results are generalized for the average steady state values of the velocities analysed. The experimental results put in evidence the correlation between the reference wind velocity and the dynamics of the air movement inside the double skin façade. These values are used to determine the convective heat transfer and the cooling effect of the air streams inside the channel upon the integrated photovoltaic panels. The decrease of the photovoltaic panels temperature determines a raise of 11% in efficiency and power generated.

  3. Adaptation of the model of tunneling in a metal/CaF{sub 2}/Si(111) system for use in industrial simulators of MIS devices

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Illarionov, Yu. Yu.; Tyaginov, S. E. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Grasser, T. [Institute for Microelectronics, TU Vienna (Austria)

    2015-02-15

    An approach toward simplification of the model of the tunneling transport of electrons through a thin layer of crystalline calcium fluoride into a silicon (111) substrate with subsequent implementation in simulators of semiconductor devices is suggested. The validity of the approach is proven by comparing the results of modeling using simplified formulas with the results of precise calculations and experimental data. The approach can be applied to calculations of tunneling currents in structures with any crystalline insulators on Si (111)

  4. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  5. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  6. The switching characteristics of free layer of patterned magnetic tunnel junction device

    International Nuclear Information System (INIS)

    Chen, C.C.; Wang, Y.R.; Kuo, C.Y.; Wu, J.C.; Horng, Lance; Wu, Teho; Yoshimura, S.; Tsunoda, M.; Takahashi, M.

    2006-01-01

    The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process

  7. Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond

    International Nuclear Information System (INIS)

    Kim, Y; Pham, C; Chang, J P

    2015-01-01

    This review focuses on recent accomplishments on complex metal oxide based multifunctional materials and the potential they hold in advancing integrated circuits. It begins with metal oxide based high-κ materials to highlight the success of their integration since 45 nm complementary metal–oxide–semiconductor (CMOS) devices. By simultaneously offering a higher dielectric constant for improved capacitance as well as providing a thicker physical layer to prevent the quantum mechanical tunnelling of electrons, high-κ materials have enabled the continued down-scaling of CMOS based devices. The most recent technology driver has been the demand to lower device power consumption, which requires the design and synthesis of novel materials, such as complex metal oxides that exhibit remarkable tunability in their ferromagnetic, ferroelectric and multiferroic properties. These properties make them suitable for a wide variety of applications such as magnetoelectric random access memory, radio frequency band pass filters, antennae and magnetic sensors. Single-phase multiferroics, while rare, offer unique functionalities which have motivated much scientific and technological research to ascertain the origins of their multiferroicity and their applicability to potential devices. However, due to the weak magnetoelectric coupling for single-phase multiferroics, engineered multiferroic composites based on magnetostrictive ferromagnets interfacing piezoelectrics or ferroelectrics have shown enhanced multiferroic behaviour from effective strain coupling at the interface. In addition, nanostructuring of the ferroic phases has demonstrated further improvement in the coupling effect. Therefore, single-phase and engineered composite multiferroics consisting of complex metal oxides are reviewed in terms of magnetoelectric coupling effects and voltage controlled ferromagnetic properties, followed by a review on the integration challenges that need to be overcome to realize the

  8. The Marketing Plan: An Integrative Device for Teaching Marketing Management.

    Science.gov (United States)

    Berdine, W. R.; Petersen, James C.

    1980-01-01

    The importance of the marketing plan is stressed as an integrative device for teaching marketing management, and a structure is presented to assist students in designing a marketing plan. Components of this plan include marketing objectives, targeting market and buying motives, external environment and competition, product, price, and promotion.…

  9. Integrated Solar-Energy-Harvesting and -Storage Device

    Science.gov (United States)

    whitacre, Jay; Fleurial, Jean-Pierre; Mojarradi, Mohammed; Johnson, Travis; Ryan, Margaret Amy; Bugga, Ratnakumar; West, William; Surampudi, Subbarao; Blosiu, Julian

    2004-01-01

    A modular, integrated, completely solid-state system designed to harvest and store solar energy is under development. Called the power tile, the hybrid device consists of a photovoltaic cell, a battery, a thermoelectric device, and a charge-control circuit that are heterogeneously integrated to maximize specific energy capacity and efficiency. Power tiles could be used in a variety of space and terrestrial environments and would be designed to function with maximum efficiency in the presence of anticipated temperatures, temperature gradients, and cycles of sunlight and shadow. Because they are modular in nature, one could use a single power tile or could construct an array of as many tiles as needed. If multiple tiles are used in an array, the distributed and redundant nature of the charge control and distribution hardware provides an extremely fault-tolerant system. The figure presents a schematic view of the device.

  10. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  11. Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

    Science.gov (United States)

    Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

    2018-01-22

    There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

  12. Flexible spintronic devices on Kapton

    DEFF Research Database (Denmark)

    Bedoya-Pinto, Amilcar; Donolato, Marco; Gobbi, Marco

    2014-01-01

    Magnetic tunnel junctions and nano-sized domain-wall conduits have been fabricated on the flexible substrate Kapton. Despite the delicate nature of tunneling barriers and zig-zag shaped nanowires, the devices show an outstanding integrity and robustness upon mechanical bending. High values of ben...

  13. RFID and Memory Devices Fabricated Integrally on Substrates

    Science.gov (United States)

    Schramm, Harry F.

    2004-01-01

    Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

  14. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  15. Flow and turbulence control in a boundary layer wind tunnel using passive hardware devices

    Czech Academy of Sciences Publication Activity Database

    Kuznetsov, Sergeii; Ribičić, Mihael; Pospíšil, Stanislav; Plut, Mihael; Trush, Arsenii; Kozmar, H.

    2017-01-01

    Roč. 41, č. 6 (2017), s. 643-661 ISSN 0732-8818 R&D Projects: GA ČR(CZ) GA14-12892S; GA MŠk(CZ) LO1219 Keywords : turbulent flow * atmospheric boundary layer * wind-tunnel simulation * castellated barrier wall * Counihan vortex generators * surface roughness elements * hot-wire measurements Subject RIV: JM - Building Engineering OBOR OECD: Construction engineering, Municipal and structural engineering Impact factor: 0.932, year: 2016 https://link.springer.com/article/10.1007/s40799-017-0196-z

  16. Nonadiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density-Functional Theory

    Science.gov (United States)

    Dittmann, Niklas; Splettstoesser, Janine; Helbig, Nicole

    2018-04-01

    We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb interaction and tunnel coupling to an adjacent lead in time-dependent density-functional theory. Based on this system, we develop a time-nonlocal exchange-correlation potential by exploiting analogies with quantum-transport theory. The time nonlocality manifests itself in a dynamical potential step. We explicitly link the time evolution of the dynamical step to physical relaxation timescales of the electron dynamics. Finally, we discuss prospects for simulations of larger mesoscopic systems.

  17. Integrated biocircuits: engineering functional multicellular circuits and devices

    Science.gov (United States)

    Prox, Jordan; Smith, Tory; Holl, Chad; Chehade, Nick; Guo, Liang

    2018-04-01

    Objective. Implantable neurotechnologies have revolutionized neuromodulatory medicine for treating the dysfunction of diseased neural circuitry. However, challenges with biocompatibility and lack of full control over neural network communication and function limits the potential to create more stable and robust neuromodulation devices. Thus, we propose a platform technology of implantable and programmable cellular systems, namely Integrated Biocircuits, which use only cells as the functional components of the device. Approach. We envision the foundational principles for this concept begins with novel in vitro platforms used for the study and reconstruction of cellular circuitry. Additionally, recent advancements in organoid and 3D culture systems account for microenvironment factors of cytoarchitecture to construct multicellular circuits as they are normally formed in the brain. We explore the current state of the art of these platforms to provide knowledge of their advancements in circuit fabrication and identify the current biological principles that could be applied in designing integrated biocircuit devices. Main results. We have highlighted the exemplary methodologies and techniques of in vitro circuit fabrication and propose the integration of selected controllable parameters, which would be required in creating suitable biodevices. Significance. We provide our perspective and propose new insights into the future of neuromodulaion devices within the scope of living cellular systems that can be applied in designing more reliable and biocompatible stimulation-based neuroprosthetics.

  18. Comparison of costs of integrating working level devices

    International Nuclear Information System (INIS)

    Langner, G.H. Jr.

    1977-01-01

    For the purpose of deciding upon the method for making routine field measurements of radon and radon daughter products there are primarily two factors to be taken into consideration: how well the various methods measure the parameter of interest and how much they cost. For the purpose of measuring the annual average working level within a structure there are available basically two devices: the integrating air sampler and track etch film. The cost and manpower requirements for each of these two devices are discussed

  19. Integration of semiconductor and ceramic superconductor devices for microwave applications

    International Nuclear Information System (INIS)

    Klopman, B.B.G.; Weijers, H.W.; Gao, J.; Gerritsma, G.J.; Rogalla, H.

    1991-01-01

    Due to the very low-loss properties of ceramic superconductors high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature, facilitates the integration with semiconductor devices. Examples are bandpass amplifiers, microwave-operated SQUIDs combined with GaAs preamplifiers, detectors, and MOSFET low-frequency amplifiers. This paper discusses the design of such circuits on a single one inch alumina substrate using surface mount techniques. Furthermore data on circuits that have been realized in our laboratory will be presented

  20. Integration Head Mounted Display Device and Hand Motion Gesture Device for Virtual Reality Laboratory

    Science.gov (United States)

    Rengganis, Y. A.; Safrodin, M.; Sukaridhoto, S.

    2018-01-01

    Virtual Reality Laboratory (VR Lab) is an innovation for conventional learning media which show us whole learning process in laboratory. There are many tools and materials are needed by user for doing practical in it, so user could feel new learning atmosphere by using this innovation. Nowadays, technologies more sophisticated than before. So it would carry in education and it will be more effective, efficient. The Supported technologies are needed us for making VR Lab such as head mounted display device and hand motion gesture device. The integration among them will be used us for making this research. Head mounted display device for viewing 3D environment of virtual reality laboratory. Hand motion gesture device for catching user real hand and it will be visualized in virtual reality laboratory. Virtual Reality will show us, if using the newest technologies in learning process it could make more interesting and easy to understand.

  1. The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

    Science.gov (United States)

    Xu, Jian

    2008-03-01

    Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

  2. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  3. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    International Nuclear Information System (INIS)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-01-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

  4. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  5. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Friebe, Edward; Baker, Collin

    2015-01-01

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes’ susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond ∼90 °C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies

  6. A design approach for integrating thermoelectric devices using topology optimization

    DEFF Research Database (Denmark)

    Soprani, Stefano; Haertel, Jan Hendrik Klaas; Lazarov, Boyan Stefanov

    2016-01-01

    Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system...... to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems...... for different operating conditions and objective functions, such as temperature span, efficiency, and power recoveryrate. As a specific application, the integration of a thermoelectric cooler into the electronics section ofa downhole oil well intervention tool is investigated, with the objective of minimizing...

  7. A Sensor Middleware for integration of heterogeneous medical devices.

    Science.gov (United States)

    Brito, M; Vale, L; Carvalho, P; Henriques, J

    2010-01-01

    In this paper, the architecture of a modular, service-oriented, Sensor Middleware for data acquisition and processing is presented. The described solution was developed with the purpose of solving two increasingly relevant problems in the context of modern pHealth systems: i) to aggregate a number of heterogeneous, off-the-shelf, devices from which clinical measurements can be acquired and ii) to provide access and integration with an 802.15.4 network of wearable sensors. The modular nature of the Middleware provides the means to easily integrate pre-processing algorithms into processing pipelines, as well as new drivers for adding support for new sensor devices or communication technologies. Tests performed with both real and artificially generated data streams show that the presented solution is suitable for use both in a Windows PC or a Windows Mobile PDA with minimal overhead.

  8. A manufacturable process integration approach for graphene devices

    Science.gov (United States)

    Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

    2013-06-01

    In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

  9. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  10. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Science.gov (United States)

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  11. Methods for integrating a functional component into a microfluidic device

    Science.gov (United States)

    Simmons, Blake; Domeier, Linda; Woo, Noble; Shepodd, Timothy; Renzi, Ronald F.

    2014-08-19

    Injection molding is used to form microfluidic devices with integrated functional components. One or more functional components are placed in a mold cavity, which is then closed. Molten thermoplastic resin is injected into the mold and then cooled, thereby forming a solid substrate including the functional component(s). The solid substrate including the functional component(s) is then bonded to a second substrate, which may include microchannels or other features.

  12. Wearable Fall Detector using Integrated Sensors and Energy Devices

    Science.gov (United States)

    Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

    2015-11-01

    Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

  13. A design approach for integrating thermoelectric devices using topology optimization

    International Nuclear Information System (INIS)

    Soprani, S.; Haertel, J.H.K.; Lazarov, B.S.; Sigmund, O.; Engelbrecht, K.

    2016-01-01

    Highlights: • The integration of a thermoelectric (TE) cooler into a robotic tool is optimized. • Topology optimization is suggested as design tool for TE integrated systems. • A 3D optimization technique using temperature dependent TE properties is presented. • The sensitivity of the optimization process to the boundary conditions is studied. • A working prototype is constructed and compared to the model results. - Abstract: Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems for different operating conditions and objective functions, such as temperature span, efficiency, and power recovery rate. As a specific application, the integration of a thermoelectric cooler into the electronics section of a downhole oil well intervention tool is investigated, with the objective of minimizing the temperature of the cooled electronics. Several challenges are addressed: ensuring effective heat transfer from the load, minimizing the thermal resistances within the integrated system, maximizing the thermal protection of the cooled zone, and enhancing the conduction of the rejected heat to the oil well. The design method incorporates temperature dependent properties of the thermoelectric device and other materials. The 3D topology optimization model developed in this work was used to design a thermoelectric system, complete with insulation and heat sink, that was produced and tested. Good agreement between experimental results and

  14. Early integration of a bone plug in the femoral tunnel in rectangular tunnel ACL reconstruction with a bone-patellar tendon-bone graft: a prospective computed tomography analysis.

    Science.gov (United States)

    Suzuki, Tomoyuki; Shino, Konsei; Nakagawa, Shigeto; Nakata, Ken; Iwahashi, Takehiko; Kinugasa, Kazutaka; Otsubo, Hidenori; Yamashita, Toshihiko

    2011-12-01

    The purpose of this prospective study was to evaluate how early the bone plug was integrated into the rectangular femoral tunnel after anatomical ACL reconstruction using a bone-patellar tendon-bone (BTB) graft via a rectangular tunnel (RT BTB ACL-R). Twenty consecutive patients who had undergone the reconstruction procedure were evaluated by CT scans at 4 and 8 weeks postoperatively. In each scan, 30 slices for multiplanar reconstruction were collected parallel to the long axis of the parallelepiped femoral tunnel and perpendicular to the tendinous plane of the bone plug. Each slice was classified as "complete," indicating no visible gap between the plug and the tunnel wall or trabecular continuity or "incomplete," showing a visible gap. Bone plug-tunnel integration was evaluated as "excellent," "good," "fair," or "poor" for >20, 11-20, 5-10, and values at the anterior interface between the bone plug and the tunnel wall were also measured on both scans. The mean changes in CT value at 8 weeks were significantly lower than those at 4 weeks. This study shows that bone plug-femoral tunnel integration was almost complete by 8 weeks after surgery using RT BTB ACL-R.

  15. Integration of active devices on smart polymers for neural interfaces

    Science.gov (United States)

    Avendano-Bolivar, Adrian Emmanuel

    The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of

  16. Study of the Integration of the CNU-TS-1 Mobile Tunnel Monitoring System.

    Science.gov (United States)

    Du, Liming; Zhong, Ruofei; Sun, Haili; Zhu, Qiang; Zhang, Zhen

    2018-02-01

    A rapid, precise and automated means for the regular inspection and maintenance of a large number of tunnels is needed. Based on the depth study of the tunnel monitoring method, the CNU-TS-1 mobile tunnel monitoring system (TS1) is developed and presented. It can efficiently obtain the cross-sections that are orthogonal to the tunnel in a dynamic way, and the control measurements that depend on design data are eliminated. By using odometers to locate the cross-sections and correcting the data based on longitudinal joints of tunnel segment lining, the cost of the system has been significantly reduced, and the interval between adjacent cross-sections can reach 1-2 cm when pushed to collect data at a normal walking speed. Meanwhile, the relative deformation of tunnel can be analyzed by selecting cross-sections from original data. Through the measurement of the actual tunnel, the applicability of the system for tunnel deformation detection is verified, and the system is shown to be 15 times more efficient than that of the total station. The simulation experiment of the tunnel deformation indicates that the measurement accuracy of TS1 for cross-sections is 1.1 mm. Compared with the traditional method, TS1 improves the efficiency as well as increases the density of the obtained points.

  17. Study of the Integration of the CNU-TS-1 Mobile Tunnel Monitoring System

    Directory of Open Access Journals (Sweden)

    Liming Du

    2018-02-01

    Full Text Available A rapid, precise and automated means for the regular inspection and maintenance of a large number of tunnels is needed. Based on the depth study of the tunnel monitoring method, the CNU-TS-1 mobile tunnel monitoring system (TS1 is developed and presented. It can efficiently obtain the cross-sections that are orthogonal to the tunnel in a dynamic way, and the control measurements that depend on design data are eliminated. By using odometers to locate the cross-sections and correcting the data based on longitudinal joints of tunnel segment lining, the cost of the system has been significantly reduced, and the interval between adjacent cross-sections can reach 1–2 cm when pushed to collect data at a normal walking speed. Meanwhile, the relative deformation of tunnel can be analyzed by selecting cross-sections from original data. Through the measurement of the actual tunnel, the applicability of the system for tunnel deformation detection is verified, and the system is shown to be 15 times more efficient than that of the total station. The simulation experiment of the tunnel deformation indicates that the measurement accuracy of TS1 for cross-sections is 1.1 mm. Compared with the traditional method, TS1 improves the efficiency as well as increases the density of the obtained points.

  18. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  19. PIV Analysis Comparing Aerodynamic Downforce Devices on Race Car in Water Tunnel

    Science.gov (United States)

    Hellman, Sam; Tkacik, Peter; Uddin, Mesbah; Kelly, Scott

    2010-11-01

    There have been claims that the rear wing on the NASCAR Car of Tomorrow (COT) race car causes lift in the condition where the car spins during a crash and is traveling backwards down the track at a high rate of speed. When enough lift is generated, the race car can lose control and even fly off of the track surface completely. To address this concern, a new rear spoiler was designed by NASCAR to replace the wing and prevent this dangerous condition. Flow characteristics of both the rear wing and the new spoiler are qualitatively analyzed using particle image velocimetry (PIV). The experiment is done in a continuous flow water tunnel using a simplified 10% scale model COT. Flow structures are identified and compared for both the wing and spoiler. The same conditions are also reviewed when the car is traveling backwards as it might during a crash. The cause of the lift generated by the rear wing when in reverse is shown.

  20. Elimination of nuclear device in tunnel 108K. Safety of works and ecological cleanness

    International Nuclear Information System (INIS)

    Andrusenko, B. A.; Kuznetsov, Yu. I.; Litvinov, B. V.; Nechai, V. Z.; Smirnov, V. Z.; Zherbina, A.N.; Kozlov, E. P.; Matuschenko, A. M.; Zhantikin, T. M.; Smagulov, S. G.; Tukhvatulin, Sh. T.

    1997-01-01

    This paper represents the Russian and Kazakhstan specialists activity on ND elimination located in tunnel 108K at the former Semipalatinsk test site. The completed works system which is a great realized ecologically clean project for the interests of the solution of ecological problems and environment protection at the Semipalatinsk test site, is considered successively in this paper. The special attention is paid to the measures the application of which allowed to provide the absolute observance of ecological cleanness and operation safety - expertise of radiation and ecological project safety, joint radio-ecological control before and after the ND elimination, procedures of the end ND box opening, visualization and decision on the ND state, and the coordinated physical measuring as well confirming the fact of the charge BB acting and ND elimination. The paper gives the detailed comments on the realized project decisions for the stemming complex erection the use of which provided the safe disposal and sealing of chemical BB explosion products and atomized fission materials in the end box and allowed to prevent their release into the day surface. While erecting the stemming complex the new materials of stemming and stemming work technology of principle were used. The basic experiments outcomes and argumentation of the obtained experience use during the joint work while preparing and realizing the further International Agreements on the former Semipalatinsk test site, are presented in the paper conclusion

  1. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  2. Thin-film luminescent concentrators for integrated devices: a cookbook.

    Science.gov (United States)

    Evenson, S A; Rawicz, A H

    1995-11-01

    A luminescent concentrator (LC) is a nonimaging optical device used for collecting light energy. As a result of its unique properties, a LC also offers the possibility of separating different portions of the spectrum and concentrating them at the same time. Hence, LC's can be applied to a whole range of problems requiring the collection, manipulation, and distribution or measurement of light. Further-more, as described in our previous research, thin-film LC elements can be deposited directly over sensor and processing electronics in the form of integrated LC devices. As an aid to further research, the materials and technology required to fabricate these thin-film LC elements through the use of an ultraviolet-curable photopolymer are documented in detail.

  3. Integrated Microfibre Device for Refractive Index and Temperature Sensing

    Directory of Open Access Journals (Sweden)

    Sulaiman W. Harun

    2012-08-01

    Full Text Available A microfibre device integrating a microfibre knot resonator in a Sagnac loop reflector is proposed for refractive index and temperature sensing. The reflective configuration of this optical structure offers the advantages of simple fabrication and ease of sensing. To achieve a balance between responsiveness and robustness, the entire microfibre structure is embedded in low index Teflon, except for the 0.5–2 mm diameter microfibre knot resonator sensing region. The proposed sensor has exhibited a linear spectral response with temperature and refractive index. A small change in free spectral range is observed when the microfibre device experiences a large refractive index change in the surrounding medium. The change is found to be in agreement with calculated results based on dispersion relationships.

  4. Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime

    Science.gov (United States)

    2014-12-10

    major success being the Wigner function simulation of magnetic field tuning of transient spin-dependent RTD structures, and while GaN barrier devices...The simulations that were performed used Wigner functions , but in all of our studies the Wigner function equations arose from a Weyl transformation...the equations to the Wigner function used in the simulations and well as the drift an diffusion equations used in part of the study we deal with a

  5. FISHprep: A Novel Integrated Device for Metaphase FISH Sample Preparation

    DEFF Research Database (Denmark)

    Shah, Pranjul Jaykumar; Vedarethinam, Indumathi; Kwasny, Dorota

    2011-01-01

    We present a novel integrated device for preparing metaphase chromosomes spread slides (FISHprep). The quality of cytogenetic analysis from patient samples greatly relies on the efficiency of sample pre-treatment and/or slide preparation. In cytogenetic slide preparation, cell cultures...... are routinely used to process samples (for culture, arrest and fixation of cells) and/or to expand limited amount of samples (in case of prenatal diagnostics). Arguably, this expansion and other sample pretreatments form the longest part of the entire diagnostic protocols spanning over 3–4 days. We present here...... with minimal handling for metaphase FISH slide preparation....

  6. Device for the integral measurement of ionizing radiations

    International Nuclear Information System (INIS)

    Micheron, Francois.

    1980-01-01

    This invention relates to devices for the integral determination of ionizing radiations, particularly to the construction of a portable dosemeter. Portable measuring instruments have been suggested in the past, particularly dosemeters in which the discharge of a capacitor under the action of ionizing radiations is measured. Since the charge of a capacitor is not stable owing to dielectric imperfections, these measuring instruments have to be recalibrated at frequent intervals. To overcome this drawback, the invention suggests using the discharge of an electret, electrically charged to a pre-set initial value, under the action of ionizing radiations, as the transducer means of a dosemeter used in conjunction with display or warning systems [fr

  7. 76 FR 58041 - Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof; Notice...

    Science.gov (United States)

    2011-09-19

    ... Integrated Circuit Devices and Components Thereof; Notice of Institution of Investigation; Institution of... integrated circuit devices and components thereof by reason of infringement of certain claims of U.S. Patent... after importation of certain digital televisions containing integrated circuit devices and components...

  8. Portable blood extraction device integrated with biomedical monitoring system

    Science.gov (United States)

    Khumpuang, S.; Horade, M.; Fujioka, K.; Sugiyama, S.

    2006-01-01

    Painless and portable blood extraction device has been immersed in the world of miniaturization on bio-medical research particularly in manufacturing point-of-care systems. The fabrication of a blood extraction device integrated with an electrolyte-monitoring system is reported in this paper. The device has advantages in precise controlled dosage of blood extracted including the slightly damaged blood vessels and nervous system. The in-house blood diagnostic will become simple for the patients. Main components of the portable system are; the blood extraction device and electrolyte-monitoring system. The monitoring system consists of ISFET (Ion Selective Field Effect Transistor) for measuring the concentration level of minerals in blood. In this work, we measured the level of 3 ions; Na+, K+ and Cl-. The mentioned ions are frequently required the measurement since their concentration levels in the blood can indicate whether the kidney, pancreas, liver or heart is being malfunction. The fabrication of the whole system and experimentation on each ISM (Ion Sensitive Membrane) will be provided. Taking the advantages of LIGA technology, the 100 hollow microneedles fabricated by Synchrotron Radiation deep X-ray lithography through PCT (Plane-pattern to Cross-section Transfer) technique have been consisted in 5x5 mm2 area. The microneedle is 300 μm in base-diameter, 500 μm-pitch, 800 μm-height and 50 μm hole-diameter. The total size of the blood extraction device is 2x2x2 cm 3. The package is made from a plastic socket including slots for inserting microneedle array and ISFET connecting to an electrical circuit for the monitoring. Through the dimensional design for simply handling and selection of disposable material, the patients can self-evaluate the critical level of the body minerals in anywhere and anytime.

  9. Medicine Delivery Device with Integrated Sterilization and Detection

    Science.gov (United States)

    Shearn, Michael J.; Greer, Harold F.; Manohara, Harish

    2013-01-01

    Sterile delivery devices can be created by integrating a medicine delivery instrument with surfaces that are coated with germicidal and anti-fouling material. This requires that a large-surface-area template be developed within a constrained volume to ensure good contact between the delivered medicine and the germicidal material. Both of these can be integrated using JPL-developed silicon nanotip or cryo-etch black silicon technologies with atomic layer deposition (ALD) coating of specific germicidal layers. The application of semiconductor processing techniques and technologies to the problems of fluid manipulation and delivery has enabled the integration of chemical, electrical, and mechanical manipulation of samples all within a single microfluidic device. This approach has been successfully applied at JPL to the automated processing, detection, and analysis of minute quantities (parts per trillion level) of biomaterials to develop instruments for in situ exploration or extraterrestrial bodies. The same nanofabrication techniques that are used to produce a microfluidics device are also capable of synthesizing extremely high-surface-area templates in precise locations, and coating those surfaces with conformal films to manipulate their surface properties. This methodology has been successfully applied at JPL to produce patterned and coated silicon nanotips (also known as black silicon) to manipulate the hydrophilicity of surfaces to direct the spreading of fluids in microdevices. JPL's ALD technique is an ideal method to produce the highly conformal coatings required for this type of application. Certain materials, such as TiO2, have germicidal and anti-fouling properties when they are illuminated with UV light. The proposed delivery device contacts medicine with this high-surface-area black silicon surface coated with a thin-film germicidal deposited conformally with ALD. The coating can also be illuminated with ultraviolet light for the purpose of sterilization

  10. Semiconductor Devices Inspired By and Integrated With Biology

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John [University of Illinois

    2012-04-25

    Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt biologically inspired designs or require intimate integration with the human body. This talk describes the development of ideas for electronics that offer the performance of state-of-the-art, wafer- based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in (1) bio- integrated, ‘tissue-like’ electronics with unique capabilities for mapping cardiac and neural electrophysiology, and (2) bio-inspired, ‘eyeball’ cameras with exceptional imaging properties enabled by curvilinear, Petzval designs.

  11. Lithography for enabling advances in integrated circuits and devices.

    Science.gov (United States)

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

  12. Charge Islands Through Tunneling

    Science.gov (United States)

    Robinson, Daryl C.

    2002-01-01

    It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

  13. Extended device profiles and testing procedures for the approval process of integrated medical devices using the IEEE 11073 communication standard.

    Science.gov (United States)

    Janß, Armin; Thorn, Johannes; Schmitz, Malte; Mildner, Alexander; Dell'Anna-Pudlik, Jasmin; Leucker, Martin; Radermacher, Klaus

    2018-02-23

    Nowadays, only closed and proprietary integrated operating room systems (IORS) from big manufacturers are available on the market. Hence, the interconnection of components from third-party vendors is only possible with increased time and costs. In the context of the German Federal Ministry of Education and Research (BMBF)-funded project OR.NET (2012-2016), the open integration of medical devices from different manufacturers was addressed. An integrated operating theater based on the open communication standard IEEE 11073 shall give clinical operators the opportunity to choose medical devices independently of the manufacturer. This approach would be advantageous especially for hospital operators and small- and medium-sized enterprises (SME) of medical devices. Actual standards and concepts regarding technical feasibility and the approval process do not cope with the requirements for a modular integration of medical devices in the operating room (OR), based on an open communication standard. Therefore, innovative approval strategies and corresponding certification and test procedures, which cover actual legal and normative standards, have to be developed in order to support the future risk management and the usability engineering process of open integrated medical devices in the OR. The use of standardized device and service profiles and a three-step testing procedure, including conformity, interoperability and integration tests are described in this paper and shall support the manufacturers to integrate their medical devices without disclosing the medical devices' risk analysis and related confidential expertise or proprietary information.

  14. Indoor Navigation Design Integrated with Smart Phones and Rfid Devices

    Science.gov (United States)

    Ortakci, Y.; Demiral, E.; Atila, U.; Karas, I. R.

    2015-10-01

    High rise, complex and huge buildings in the cities are almost like a small city with their tens of floors, hundreds of corridors and rooms and passages. Due to size and complexity of these buildings, people need guidance to find their way to the destination in these buildings. In this study, a mobile application is developed to visualize pedestrian's indoor position as 3D in their smartphone and RFID Technology is used to detect the position of pedestrian. While the pedestrian is walking on his/her way on the route, smartphone will guide the pedestrian by displaying the photos of indoor environment on the route. Along the tour, an RFID (Radio-Frequency Identification) device is integrated to the system. The pedestrian will carry the RFID device during his/her tour in the building. The RFID device will send the position data to the server directly in every two seconds periodically. On the other side, the pedestrian will just select the destination point in the mobile application on smartphone and sent the destination point to the server. The shortest path from the pedestrian position to the destination point is found out by the script on the server. This script also sends the environment photo of the first node on the acquired shortest path to the client as an indoor navigation module.

  15. A compact electroencephalogram recording device with integrated audio stimulation system

    Science.gov (United States)

    Paukkunen, Antti K. O.; Kurttio, Anttu A.; Leminen, Miika M.; Sepponen, Raimo E.

    2010-06-01

    A compact (96×128×32 mm3, 374 g), battery-powered, eight-channel electroencephalogram recording device with an integrated audio stimulation system and a wireless interface is presented. The recording device is capable of producing high-quality data, while the operating time is also reasonable for evoked potential studies. The effective measurement resolution is about 4 nV at 200 Hz sample rate, typical noise level is below 0.7 μVrms at 0.16-70 Hz, and the estimated operating time is 1.5 h. An embedded audio decoder circuit reads and plays wave sound files stored on a memory card. The activities are controlled by an 8 bit main control unit which allows accurate timing of the stimuli. The interstimulus interval jitter measured is less than 1 ms. Wireless communication is made through bluetooth and the data recorded are transmitted to an external personal computer (PC) interface in real time. The PC interface is implemented with LABVIEW® and in addition to data acquisition it also allows online signal processing, data storage, and control of measurement activities such as contact impedance measurement, for example. The practical application of the device is demonstrated in mismatch negativity experiment with three test subjects.

  16. An integrated semiconductor device enabling non-optical genome sequencing.

    Science.gov (United States)

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-20

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

  17. Power spectrum analysis for defect screening in integrated circuit devices

    Science.gov (United States)

    Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

    2011-12-01

    A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

  18. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    Science.gov (United States)

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Medical device integration: CIOs must bridge the digital divide between devices and electronic medical records.

    Science.gov (United States)

    Raths, David

    2009-02-01

    To get funding approved for medical device integration, ClOs suggest focusing on specific patient safety or staff efficiency pain points. Organizations that make clinical engineering part of their IT team report fewer chain-of-command issues. It also helps IT people understand the clinical goals because the engineering people have been working closely with clinicians for years. A new organization has formed to work on collaboration between clinical engineers and IT professionals. For more information, go to www.ceitcollaboration.org. ECRI Institute has written a guide to handling the convergence of medical technology and hospital networks. Its "Medical Technology for the IT Professional: An Essential Guide for Working in Today's Healthcare Setting" also details how IT professionals can assist hospital technology planning and acquisition, and provide ongoing support for IT-based medical technologies. For more information, visit www.ecri.org/ITresource.

  20. 77 FR 35426 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Institution of...

    Science.gov (United States)

    2012-06-13

    ... of certain radio frequency integrated circuits and devices containing same by reason of infringement... importation of certain radio frequency integrated circuits and devices containing same that infringe one or... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-848] Certain Radio Frequency Integrated...

  1. Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

    KAUST Repository

    Perozziello, Gerardo; Candeloro, Patrizio; De Grazia, Antonio; Esposito, Francesco; Allione, Marco; Coluccio, Maria Laura; Tallerico, Rossana; Valpapuram, Immanuel; Tirinato, Luca; Das, Gobind; Giugni, Andrea; Torre, Bruno; Veltri, Pierangelo; Kruhne, Ulrich; Della Valle, Giuseppe; Di Fabrizio, Enzo M.

    2015-01-01

    In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels- where

  2. A study of inelastic electron-phonon interactions on tunneling magnetoresistance of a nano-scale device

    International Nuclear Information System (INIS)

    Modarresi, M.; Roknabadi, M.R.; Shahtahmasbi, N.; Vahedi Fakhrabad, D.; Arabshahi, H.

    2011-01-01

    In this research, we have studied the effect of inelastic electron-phonon interactions on current-voltage characteristic and tunneling magnetoresistance of a polythiophene molecule that is sandwiched between two cobalt electrodes using modified Green's function method as proposed by Walczak. The molecule is described with a modified Su-Schrieffer-Heeger Hamiltonian. The ground state of the molecule is obtained by Hellman-Feynman theorem. Electrodes are described in the wide-band approximation and spin-flip is neglected during conduction. Our calculation results show that with increase in voltage the currents increase and tunneling magnetoresistance decreases. Change in tunneling magnetoresistance due to inelastic interactions is limited in a small bias voltage interval and can be neglected in the other bias voltages. -- Research Highlights: →We investigate the effect of inelastic interaction on transport properties. →Due to inelastic interactions tunneling magnetoresistance decreases. →Decrease in TMR is restricted in a small voltage interval.

  3. Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode

    Energy Technology Data Exchange (ETDEWEB)

    Rudolph, M.; Carr, S. M.; Ten Eyck, G.; Dominguez, J.; Carroll, M. S.; Bussmann, E. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Subramania, G. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Pluym, T.

    2014-10-20

    Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes slow (∼10{sup 2} nm{sup 2}/s) patterning speeds. By contrast, using the STM in a high-voltage (>10 V) field-emission mode, patterning speeds can be increased by orders of magnitude to ≳10{sup 4} nm{sup 2}/s. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads for these devices. For nanoscale structures, we show that the resulting electrical transport is consistent with the donor incorporation chemistry constraining the electrical dimensions to a scale of 10 nm even though the pattering spot size is 40 nm.

  4. Proton tunneling in solids

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, J.

    1998-10-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  5. Proton tunneling in solids

    International Nuclear Information System (INIS)

    Kondo, J.

    1998-01-01

    The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

  6. Risk Analysis for Road Tunnels – A Metamodel to Efficiently Integrate Complex Fire Scenarios

    DEFF Research Database (Denmark)

    Berchtold, Florian; Knaust, Christian; Arnold, Lukas

    2018-01-01

    Fires in road tunnels constitute complex scenarios with interactions between the fire, tunnel users and safety measures. More and more methodologies for risk analysis quantify the consequences of these scenarios with complex models. Examples for complex models are the computational fluid dynamics...... complex scenarios in risk analysis. To face this challenge, we improved the metamodel used in the methodology for risk analysis presented on ISTSS 2016. In general, a metamodel quickly interpolates the consequences of few scenarios simulated with the complex models to a large number of arbitrary scenarios...... used in risk analysis. Now, our metamodel consists of the projection array-based design, the moving least squares method, and the prediction interval to quantify the metamodel uncertainty. Additionally, we adapted the projection array-based design in two ways: the focus of the sequential refinement...

  7. Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

    OpenAIRE

    石橋, 孝昭

    2012-01-01

    This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

  8. Evaluating and Predicting Patient Safety for Medical Devices With Integral Information Technology

    Science.gov (United States)

    2005-01-01

    323 Evaluating and Predicting Patient Safety for Medical Devices with Integral Information Technology Jiajie Zhang, Vimla L. Patel, Todd R...errors are due to inappropriate designs for user interactions, rather than mechanical failures. Evaluating and predicting patient safety in medical ...the users on the identified trouble spots in the devices. We developed two methods for evaluating and predicting patient safety in medical devices

  9. Wearable Fall Detector using Integrated Sensors and Energy Devices

    OpenAIRE

    Sungmook Jung; Seungki Hong; Jaemin Kim; Sangkyu Lee; Taeghwan Hyeon; Minbaek Lee; Dae-Hyeong Kim

    2015-01-01

    Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction wi...

  10. Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

    Directory of Open Access Journals (Sweden)

    Saumya Sharma

    2014-11-01

    Full Text Available The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA and their use in metal–insulator–metal (MIM devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition and Langmuir–Schaefer (LS, horizontal deposition techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass. The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V, and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

  11. Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education

    Science.gov (United States)

    Meletiou-Mavrotheris, Maria, Ed.; Mavrou, Katerina, Ed.; Paparistodemou, Efi, Ed.

    2015-01-01

    Despite increased interest in mobile devices as learning tools, the amount of available primary research studies on their integration into mathematics teaching and learning is still relatively small due to the novelty of these technologies. "Integrating Touch-Enabled and Mobile Devices into Contemporary Mathematics Education" presents…

  12. Incidence of thrombosis in children with tunneled central venous access devices versus peripherally inserted central catheters (PICCs).

    Science.gov (United States)

    Kanin, Maralee; Young, Guy

    2013-11-01

    The recent proliferation of deep vein thrombosis in children has been attributed to the increased use of central venous catheters, specifically tunneled lines and peripherally inserted central catheters. A formal comparison of the incidence rate for deep vein thrombosis between tunneled lines and peripherally inserted central catheters has not been undertaken. Children inclusion. Data were extracted from the hospital discharge database which includes data on all procedures and up to 20 diagnoses per admission. Diagnoses and procedures were identified by International Classification of Disease, Ninth Revision coding. Patients were excluded if they received more than one central line. Data collected included type of central line, deep vein thrombosis event, and underlying medical illnesses classified according to chronic complex conditions. Over the seven year study period there was an overall rate of 73 deep vein thromboses per 10,000 hospital discharges. Of the 6915 eligible subjects, 181 had a deep vein thrombosis for an overall incidence rate of 2.6%. There were 152 thrombi (2.6%) in subjects with peripherally inserted central catheters and 29 thrombi (3.1%) in subjects with tunneled lines [OR=.83 (0.55, 1.29), p=0.38]. Despite the relative ease and simplicity of use of peripherally inserted central catheters leading to a substantial rise in their use, this study demonstrates that such lines pose a substantial risk for venous thrombosis and no difference in incidence was detected between such lines and tunneled lines. © 2013.

  13. Compact integrated optical devices for optical sensor and switching applications

    NARCIS (Netherlands)

    Kauppinen, L.J.

    2010-01-01

    This thesis describes the design, fabrication, and characterization of compact optical devices for sensing and switching applications. Our focus has been to realize the devices using CMOS-compatible fabrication processes. Particularly the silicon photonics fabrication platform, ePIXfab, has been

  14. Microfluidic devices and methods for integrated flow cytometry

    Science.gov (United States)

    Srivastava, Nimisha [Goleta, CA; Singh, Anup K [Danville, CA

    2011-08-16

    Microfluidic devices and methods for flow cytometry are described. In described examples, various sample handling and preparation steps may be carried out within a same microfluidic device as flow cytometry steps. A combination of imaging and flow cytometry is described. In some examples, spiral microchannels serve as incubation chambers. Examples of automated sample handling and flow cytometry are described.

  15. Energy harvesting: an integrated view of materials, devices and applications

    Science.gov (United States)

    Radousky, H. B.; Liang, H.

    2012-12-01

    Energy harvesting refers to the set of processes by which useful energy is captured from waste, environmental, or mechanical sources and is converted into a usable form. The discipline of energy harvesting is a broad topic that includes established methods and materials such as photovoltaics and thermoelectrics, as well as more recent technologies that convert mechanical energy, magnetic energy and waste heat to electricity. This article will review various state-of-the-art materials and devices for direct energy conversion and in particular will include multistep energy conversion approaches. The article will highlight the nano-materials science underlying energy harvesting principles and devices, but also include more traditional bulk processes and devices as appropriate and synergistic. Emphasis is placed on device-design innovations that lead to higher efficiency energy harvesting or conversion technologies ranging from the cm/mm-scale down to MEMS/NEMS (micro- and nano-electromechanical systems) devices. Theoretical studies are reviewed, which address transport properties, crystal chemistry, thermodynamic analysis, energy transfer, system efficiency and device operation. New developments in experimental methods; device design and fabrication; nanostructured materials fabrication; materials properties; and device performance measurement techniques are discussed.

  16. Aerodynamic results of wind tunnel tests on a 0.010-scale model (32-QTS) space shuttle integrated vehicle in the AEDC VKF-40-inch supersonic wind tunnel (IA61)

    Science.gov (United States)

    Daileda, J. J.

    1976-01-01

    Plotted and tabulated aerodynamic coefficient data from a wind tunnel test of the integrated space shuttle vehicle are presented. The primary test objective was to determine proximity force and moment data for the orbiter/external tank and solid rocket booster (SRB) with and without separation rockets firing for both single and dual booster runs. Data were obtained at three points (t = 0, 1.25, and 2.0 seconds) on the nominal SRB separation trajectory.

  17. Development and Testing of an Integrated Sandia Cooler Thermoelectric Device (SCTD).

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Terry A.; Staats, Wayne Lawrence,; Leick, Michael Thomas; Zimmerman, Mark D.; Radermacher, Reinhard; Martin, Cara; Nasuta, Dennis; Kalinowski, Paul; Hoffman, William

    2014-12-01

    This report describes a FY14 effort to develop an integrated Sandia Cooler T hermoelectric D evice (SCTD) . The project included a review of feasible thermoelectric (TE) cooling applications, baseline performance testing of an existing TE device, analysis and design development of an integrated SCTD assembly, and performance measurement and validation of the integrated SCTD prototype.

  18. Portable Integrated Wireless Device Threat Assessment to Aircraft Radio Systems

    Science.gov (United States)

    Salud, Maria Theresa P.; Williams, Reuben A. (Technical Monitor)

    2004-01-01

    An assessment was conducted on multiple wireless local area network (WLAN) devices using the three wireless standards for spurious radiated emissions to determine their threat to aircraft radio navigation systems. The measurement process, data and analysis are provided for devices tested using IEEE 802.11a, IEEE 802.11b, and Bluetooth as well as data from portable laptops/tablet PCs and PDAs (grouping known as PEDs). A comparison was made between wireless LAN devices and portable electronic devices. Spurious radiated emissions were investigated in the radio frequency bands for the following aircraft systems: Instrument Landing System Localizer and Glideslope, Very High Frequency (VHF) Communication, VHF Omnidirectional Range, Traffic Collision Avoidance System, Air Traffic Control Radar Beacon System, Microwave Landing System and Global Positioning System. Since several of the contiguous navigation systems were grouped under one encompassing measurement frequency band, there were five measurement frequency bands where spurious radiated emissions data were collected for the PEDs and WLAN devices. The report also provides a comparison between emissions data and regulatory emission limit.

  19. Device for simulation of integral dose distribution in multifield radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Belyakov, E K; Voronin, V V; Kolosova, V F; Moskalev, A I; Marova, Yu M; Stavitskii, R V; Yarovoi, V S

    1974-11-15

    Described is a device for simulation of the sum dose distribution at multifield radiation therapy; the device comprises a mechanical unit on which the emission sources and detectors are mounted, an electromechanical scanning equipment, amplifiers, an adder, a position sensor and a recording instrument. The device suggested raises an accuracy of a sick man radiation program elaboration at a remote multifield radiation therapy, permits to estimate the irradiated medium heterogeneity and beam shaper influence on the sum dose distribution and also ensured the information on the sum dose distribution of the relative or absolute units. Additional filters simulating heterogeneity and beam shaping conditions of ionizing radiation may be mounted between the quantum emission sources and detectors, and an amplifier with a variable amplification factor may be placed between the adders and printers. Thus it is possible to obtain a sum dose distribution at static methods of the remote radiation therapy at a high degree of accuracy (up to +-10%).

  20. Performance of overlapped shield tunneling through an integrated physical model tests, numerical simulations and real-time field monitoring

    Directory of Open Access Journals (Sweden)

    Junlong Yang

    2017-03-01

    Full Text Available In this work, deformations and internal forces of an existing tunnel subjected to a closely overlapped shield tunneling are monitored and analyzed using a series of physical model experiments and numerical simulations. Effects of different excavation sequences and speeds are explicitly considered in the analysis. The results of the physical model experiments show that the bottom-up tunneling procedure is better than the top-down tunneling procedure. The incurred deformations and internal forces of the existing tunnel increase with the excavation speed and the range of influence areas also increase accordingly. For construction process control, real-time monitoring of the power tunnel is used. The monitoring processes feature full automation, adjustable frequency, real-time monitor and dynamic feedback, which are used to guide the construction to achieve micro-disturbance control. In accordance with the situation of crossing construction, a numerical study on the performance of power tunnel is carried out. Construction control measures are given for the undercrossing construction, which helps to accomplish the desired result and meet protection requirements of the existing tunnel structure. Finally, monitoring data and numerical results are compared, and the displacement and joint fracture change models in the power tunnel subject to the overlapped shield tunnel construction are analyzed. Keywords: Overlapped tunnel, Automatic monitoring, Micro-disturbance control

  1. Silicon analog components device design, process integration, characterization, and reliability

    CERN Document Server

    El-Kareh, Badih

    2015-01-01

    This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  2. User centered integration of Internet of Things devices

    Science.gov (United States)

    Manione, Roberto

    2017-06-01

    This paper discusses an IoT framework which allows rapid and easy setup and customization of end-to-end solutions for field data collection and presentation; it is effective in the development of both informative and transactional applications for a wide range of application fields, such as home, industry and environment. On the "far-end" of the chain are the IoT devices gathering the signals; they are developed used a full Model Based approach, where programming is not required: the TaskScript technology is used to this purpose, which supports a choice of physical boards and boxes equipped with a range of Input and Output interfaces, and with a Tcp/Ip interface. The development of the needed specific IoT devices takes advantage of the available "standard" hardware; the software development of the algorithms for sampling, conditioning and uploading signals to the Cloud is supported by a graphical-only IDE. On the "near-end" of the chain is the presentation Interface, through which users can browse through the information provided by their IoT devices; it is implemented in a Conversational way, using the Bot paradigm: Bots are conversational automatons, to whom users can "chat". They are accessed via mainstream Messenger programs, such as Telegram(C), Skype(C) or others, available on smartphones, tablets or desktops; unlike apps, bots do not need installation on the user device. A message Broker has been implemented, to mediate among the far-end and the near-end of the chain, providing the needed services; its behavior is driven by a set of rules provided on a per-device basis, at configuration level; the Broker is able to store messages received from the devices, process and forward them to the specified recipient(s) according to the provided rules; finally, finally is it is able to send transactional commands, from users back to the requested device, to implement not only field observation but also field control. IoT solutions implemented with the proposed

  3. Devices and Desires: Integrative Strategy Instruction from a Motivational Perspective.

    Science.gov (United States)

    Vauras, Marja; And Others

    1993-01-01

    This critique of Edwin Ellis's Integrative Strategy Instruction model comments that analyses are needed concerning the mutual social adaptations of differently disposed (cognitively, motivationally, and emotionally) students with learning disabilities and teachers within the social frames of learning environments. (JDD)

  4. Integrated graphene-based devices for optoelectronic applications

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. Here I present novel integrated grapheneplasmonic waveguide modulator showing high modulation depth, thus giving a promising way...

  5. Integration of smart wearable mobile devices and cloud computing in South African healthcare

    CSIR Research Space (South Africa)

    Mvelase, PS

    2015-11-01

    Full Text Available Integration of Smart Wearable Mobile Devices and Cloud Computing in South African Healthcare Promise MVELASE, Zama DLAMINI, Angeline DLUDLA, Happy SITHOLE Abstract: The acceptance of cloud computing is increasing in a fast pace in distributed...

  6. Coordinate Systems Integration for Craniofacial Database from Multimodal Devices

    Directory of Open Access Journals (Sweden)

    Deni Suwardhi

    2005-05-01

    Full Text Available This study presents a data registration method for craniofacial spatial data of different modalities. The data consists of three dimensional (3D vector and raster data models. The data is stored in object relational database. The data capture devices are Laser scanner, CT (Computed Tomography scan and CR (Close Range Photogrammetry. The objective of the registration is to transform the data from various coordinate systems into a single 3-D Cartesian coordinate system. The standard error of the registration obtained from multimodal imaging devices using 3D affine transformation is in the ranged of 1-2 mm. This study is a step forward for storing the craniofacial spatial data in one reference system in database.

  7. Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices

    KAUST Repository

    Li, Wenjie; Fu, Hui-chun; Li, Linsen; Cabá n-Acevedo, Miguel; He, Jr-Hau; Jin, Song

    2016-01-01

    photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly

  8. InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

  9. Integration Evaluation of the Advanced Mission Extender Device Max

    Science.gov (United States)

    2014-04-04

    mellitus, hypertension, renal disease, frequent urinary tract infection ( UTIs ), any current yeast infection, recent history of heat illness, active skin...disorders, or current pregnancy . This study was reviewed by the USAARL Regulatory Compliance Officer and was determined to be a non-research test...irritation/rash or breakdown, Urinary Tract Infection ( UTI ), yeast infection, etc.) after using the AMXD device? YES NO If yes, please explain: 2

  10. Enabling Medical Device Interoperability for the Integrated Clinical Environment

    Science.gov (United States)

    2016-12-01

    context. For instance, part of the data logger demo at NIH included a scenario in which the patient received an overdose from a PCA pump . The device...data shows the patient’s physiologic response, the log from a PCA pump would show that the dose request button was pressed, but only the video could...databases including Microsoft Access  vcd (IEEE-1364) – Value Change Dump – a waveform storage format defined by the Institute of Electrical and

  11. A hybrid approach to device integration on a genetic analysis platform

    International Nuclear Information System (INIS)

    Brennan, Des; Justice, John; Aherne, Margaret; Galvin, Paul; Jary, Dorothee; Kurg, Ants; Berik, Evgeny; Macek, Milan

    2012-01-01

    Point-of-care (POC) systems require significant component integration to implement biochemical protocols associated with molecular diagnostic assays. Hybrid platforms where discrete components are combined in a single platform are a suitable approach to integration, where combining multiple device fabrication steps on a single substrate is not possible due to incompatible or costly fabrication steps. We integrate three devices each with a specific system functionality: (i) a silicon electro-wetting-on-dielectric (EWOD) device to move and mix sample and reagent droplets in an oil phase, (ii) a polymer microfluidic chip containing channels and reservoirs and (iii) an aqueous phase glass microarray for fluorescence microarray hybridization detection. The EWOD device offers the possibility of fully integrating on-chip sample preparation using nanolitre sample and reagent volumes. A key challenge is sample transfer from the oil phase EWOD device to the aqueous phase microarray for hybridization detection. The EWOD device, waveguide performance and functionality are maintained during the integration process. An on-chip biochemical protocol for arrayed primer extension (APEX) was implemented for single nucleotide polymorphism (SNiP) analysis. The prepared sample is aspirated from the EWOD oil phase to the aqueous phase microarray for hybridization. A bench-top instrumentation system was also developed around the integrated platform to drive the EWOD electrodes, implement APEX sample heating and image the microarray after hybridization. (paper)

  12. Integration of Pneumatic Technology in Powered Mobility Devices.

    Science.gov (United States)

    Daveler, Brandon; Wang, Hongwu; Gebrosky, Benjamin; Grindle, Garrett G; Schneider, Urs; Cooper, Rory A

    2017-01-01

    Advances in electric motors, electronics, and control systems have enhanced the capability and drivability of electric power mobility devices over the last 60 years. Yet, battery technologies used in powered mobility devices (PMDs) have not kept pace. Recent advances in pneumatic technology, primarily the high torque, low speed design of rotary piston air motors, directly align with the needs of PMD. Pneumatic technology has advantages over battery-powered technology, including lighter weight, lower operating costs, decreased environmental impact, better reliability, and increased safety. Two prototypes were created that incorporated rotary piston air motors, high-pressure air tanks, and air-pressure regulators. Prototype 1 was created by modifying an existing electric PMD. Range tests were performed to determine the feasibility of pneumatic technology and the optimal combination of components to allow the longest range possible at acceptable speeds over ideal conditions. Using a 1.44 L air tank for feasibility testing, prototype 1 was capable of traveling 800 m, which confirmed the feasibility of pneumatic technology usage in PMDs. Prototype 2 was designed based on the testing results from prototype 1. After further optimization of prototype 2, the average maximum range was 3,150 m. Prototype 2 is up to 28.3% lighter than an equivalent size electric PMD and can be fully recharged in approximately 2 minutes. It decreases the cost of PMDs by approximately $1,500, because batteries do not need to be replaced over the lifetime of the device. The results provide justification for the use of pneumatic technology in PMDs.

  13. Effective integration of the mobile device into education and learning

    Directory of Open Access Journals (Sweden)

    María Soledad Ramírez-Montoya

    2017-05-01

    Full Text Available It is a real fact that mobile devices, specially smartphones, and Internet have substantially changed the customs of the population, the social habits, the communication media, and, ultimately, the way of life of people. Inevitably, although with different barriers and with more time that many studies and reports estimated, mobility has arrived to the educational context, with different intensity, penetration and usage in formal and non-formal education, and in a full way into the informal learning. Mobile device is called to revolutionize the educational practices due to it introduces some degrees of freedom that other previous technologies had not offered. The power of ubiquitous connectivity and the possibilities of having access to the knowledge sources in a pocket device, such as mobile phone, or with a size as a notebook, in the case of tablets, and also equipped with a processing capacity higher than that of personal computers a few years ago, pose disruptive scenarios in educational methodologies based on technology and support eLearning as a natural option both as a complement or as a main educational model. However, this idyllic vision has a different degree of acceptance according to the educational level, the disciplinary area and the formality of the formative action. Therefore, large-scale research studies are needed to convey the degree of advancement, effective use, acceptance and penetration of mobile technologies in education and learning. This is the reason for this special issue at the Revista Iberoamericana de Educación a Distancia (RIED, which consists of 13 articles selected after a rigorous peer review of the more than 35 proposals received.

  14. FUNDAMENTAL TUNNELING PROCESSES IN MOSa SOLAR CELLS

    OpenAIRE

    Balberg , I.; Hanak , J.; Weakliem , H.; Gal , E.

    1981-01-01

    In previous studies of tunneling through a MOSa tunnel junction, where Sa was a-Si : H, it was shown that their characteristics resemble those of MOSc devices where Sc was crystalline silicon. In the present work we would like to report a demonstration of fundamental tunneling processes in such tunnel junctions. In particular, the transition from semiconductor controlled regime to tunneling controlled regime can be clearly distinguished. The present results represent one of the rare cases whe...

  15. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  16. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Science.gov (United States)

    2012-05-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

  17. 77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

    Science.gov (United States)

    2012-10-04

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-840] Certain Semiconductor Integrated... certain semiconductor integrated circuit devices and products containing same by reason of infringement of...,783; and 6,847,904. The complaint further alleges the existence of a domestic industry. The Commission...

  18. Integrating Simulated Physics and Device Virtualization in Control System Testbeds

    OpenAIRE

    Redwood , Owen; Reynolds , Jason; Burmester , Mike

    2016-01-01

    Part 3: INFRASTRUCTURE MODELING AND SIMULATION; International audience; Malware and forensic analyses of embedded cyber-physical systems are tedious, manual processes that testbeds are commonly not designed to support. Additionally, attesting the physics impact of embedded cyber-physical system malware has no formal methodologies and is currently an art. This chapter describes a novel testbed design methodology that integrates virtualized embedded industrial control systems and physics simula...

  19. Thermal Isolation and Differential Cooling of Heterogeneously Integrated Devices

    Science.gov (United States)

    2016-07-01

    negligible and only the interaction of the via, substrate, and film material play a role in keff,z. Figure 12: Evolution of keff,z of a TXV...integrated system considered in this work the CMOS power dissipation is negligible when compared to the dissipation of the power amplifier chiplets. As...Conf., pp. 111-121, 1994. [35] A. Bar-Cohen, Ed., Encyclopedia of Thermal Packaging. Set 1: Thermal Packaging Techniques. Singapore : World

  20. Investigating Mobile Devices Integration in Higher Education in Cyprus: Faculty Perspectives

    Directory of Open Access Journals (Sweden)

    Nikleia Eteokleous

    2009-01-01

    Full Text Available Mobile devices are everywhere and mobile learning has emerged as a potential educational environment; however it is relatively new to Cyprus educational system. The purpose of this research work is to assess and determine the readiness; and evaluate the viability of integrating mobile technology in Cyprus higher education level. To address the above, a mixed method approach is employed making use of quantitative and qualitative data from faculty members working in three private universities in Cyprus. Faculty reactions were mixed with some of them seeing the benefits for mobile learning while others have doubts. The results summarize the technological and pedagogical aspects to be considered prior integrating mobile devices. Additionally, the study supports that one of the major barriers to educators is the lack of understanding regarding mobile devices integration in the teaching and learning process. Finally, there is a need to develop well-defined and well-structured requirements for mobile integration in the classroom.

  1. A full-duplex working integrated optoelectronic device for optical interconnect

    Science.gov (United States)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  2. Integrative device and process of oxidization, degassing, acidity adjustment of 1BP from APOR process

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Chen; Zheng, Weifang, E-mail: wfazh@ciae.ac.cn; Yan, Taihong; He, Hui; Li, Gaoliang; Chang, Shangwen; Li, Chuanbo; Yuan, Zhongwei

    2016-02-15

    Graphical abstract: Previous (left) and present (right) device of oxidation, degassing, acidity adjustment of 1BP. - Highlights: • We designed an integrative device and process. • The utilization efficiency of N{sub 2}O{sub 4} is increased significantly. • Our work results in considerable simplification of the device. • Process parameters are determined by experiments. - Abstract: Device and process of oxidization, degassing, acidity adjustment of 1BP (The Pu production feed from U/Pu separation section) from APOR process (Advanced Purex Process based on Organic Reductants) were improved through rational design and experiments. The device was simplified and the process parameters, such as feed position and flow ratio, were determined by experiments. Based on this new device and process, the reductants N,N-dimethylhydroxylamine (DMHAN) and methylhydrazine (MMH) in 1BP solution could be oxidized with much less N{sub 2}O{sub 4} consumption.

  3. The configuration development and integration of the TPX device

    International Nuclear Information System (INIS)

    Brown, T.G.

    1993-01-01

    The TPX configuration was designed to meet the physics objectives and subsystem requirements in an arrangement that allowed access for remote maintenance. The steady state operations of TPX favored the use of superconducting magnets for both the toroidal and poloidal field systems. The desire to react the TF centering and overturning forces in a simplified wedged system lead to a TF case concept incorporating ''two-coil'' TF modules in a 90 degrees four-coil quadrant arrangement. Low ripple and tangential plasma access to accommodate TFTR neutral beams were leading factors in determining the size and number of TF coils. The need for a large amount of space for the divertor and first wall component coolant services further influenced the shaping of the vacuum vessel. Additional configuration influences included: low activation considerations, diverter pumping, remote maintenance requirements, service access and compatibility with the existing TFTR text cell facility. The TPX configuration development and integration process has evolved through the conceptual design period and is now ready to enter the Preliminary Design Phase of the project. This paper describes the status of the configuration development and integration of the major TPX tokamak subsystems components

  4. Design and Integration of Wearable Devices in Textiles

    Directory of Open Access Journals (Sweden)

    Isabel G. TRINDADE

    2014-12-01

    Full Text Available In this article, the design, production method, integration and characterization of textile sensors for the continuous monitoring of cardiac and respiration vital signals are presented. Textile electrodes, capacitive and piezoresistive sensors and respective interconnect plate were developed and integrated in elastic and adjustable chest bands, using a 6-needle digital embroidery machine and electrically conductive commercial threads. The signal's waveforms were recorded via PC with a data acquisition module and a LabView program. The signal to noise ratio of textile electrodes, having distinctive surface morphologies, that were either textured or smooth accordingly with the embroidery pattern used, were analyzed with Matlab. The quantitative method indicated differences between the two types of textile electrodes but performances comparable to standard Ag/AgCl gel electrodes. The sensors and interconnect plate were fully realized with the embroidery stitching method with textile fabrics and threads, and have a compact design, are lightweight and washable. The method offers great versatility for custom demand, in terms of sensor design and materials.

  5. Roll-to-roll embedded conductive structures integrated into organic photovoltaic devices

    International Nuclear Information System (INIS)

    Van de Wiel, H J; Galagan, Y; Van Lammeren, T J; De Riet, J F J; Gilot, J; Nagelkerke, M G M; Lelieveld, R H C A T; Shanmugam, S; Pagudala, A; Groen, W A; Hui, D

    2013-01-01

    Highly conductive screen printed metallic (silver) structures (current collecting grids) combined with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) are a viable replacement for indium tin oxide (ITO) and inkjet printed silver as transparent electrode materials. To provide successful integration into organic photovoltaic (OPV) devices, screen printed silver current collecting grids should be embedded into a substrate to avoid topology issues. In this study micron-thick conductive structures are embedded and integrated into OPV devices. The embedded structures are produced roll-to-roll with optimized process settings and materials. Topology measurements show that the embedded grids are well suited for integration into OPV devices since the surface is almost without spikes and has low surface roughness. JV measurements of OPV devices with embedded structures on a polyethylene terephthalate/silicon nitride (PET/SiN) substrate show an efficiency of 2.15%, which is significantly higher than identical flexible devices with ITO (1.02%) and inkjet printed silver (1.48%). The use of embedded screen printed silver instead of ITO and inkjet printed silver in OPV devices will allow for higher efficiency devices which can be produced with larger design and process freedom. (paper)

  6. Monolithic microwave integrated circuit devices for active array antennas

    Science.gov (United States)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  7. Modelling of optoelectronic circuits based on resonant tunneling diodes

    Science.gov (United States)

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  8. Integrated bioassays in microfluidic devices: botulinum toxin assays.

    Science.gov (United States)

    Mangru, Shakuntala; Bentz, Bryan L; Davis, Timothy J; Desai, Nitin; Stabile, Paul J; Schmidt, James J; Millard, Charles B; Bavari, Sina; Kodukula, Krishna

    2005-12-01

    A microfluidic assay was developed for screening botulinum neurotoxin serotype A (BoNT-A) by using a fluorescent resonance energy transfer (FRET) assay. Molded silicone microdevices with integral valves, pumps, and reagent reservoirs were designed and fabricated. Electrical and pneumatic control hardware were constructed, and software was written to automate the assay protocol and data acquisition. Detection was accomplished by fluorescence microscopy. The system was validated with a peptide inhibitor, running 2 parallel assays, as a feasibility demonstration. The small footprint of each bioreactor cell (0.5 cm2) and scalable fluidic architecture enabled many parallel assays on a single chip. The chip is programmable to run a dilution series in each lane, generating concentration-response data for multiple inhibitors. The assay results showed good agreement with the corresponding experiments done at a macroscale level. Although the system has been developed for BoNT-A screening, a wide variety of assays can be performed on the microfluidic chip with little or no modification.

  9. Integrated nanohole array surface plasmon resonance sensing device using a dual-wavelength source

    International Nuclear Information System (INIS)

    Escobedo, C; Vincent, S; Choudhury, A I K; Campbell, J; Gordon, R; Brolo, A G; Sinton, D

    2011-01-01

    In this paper, we demonstrate a compact integrated nanohole array-based surface plasmon resonance sensing device. The unit includes a LED light source, driving circuitry, CCD detector, microfluidic network and computer interface, all assembled from readily available commercial components. A dual-wavelength LED scheme was implemented to increase spectral diversity and isolate intensity variations to be expected in the field. The prototype shows bulk sensitivity of 266 pixel intensity units/RIU and a limit of detection of 6 × 10 −4 RIU. Surface binding tests were performed, demonstrating functionality as a surface-based sensing system. This work is particularly relevant for low-cost point-of-care applications, especially those involving multiple tests and field studies. While nanohole arrays have been applied to many sensing applications, and their suitability to device integration is well established, this is the first demonstration of a fully integrated nanohole array-based sensing device.

  10. Growth of Si nanocrystals on alumina and integration in memory devices

    Science.gov (United States)

    Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

    2003-06-01

    We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

  11. Tunneling works. Tunnel koji

    Energy Technology Data Exchange (ETDEWEB)

    Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

    1991-10-25

    A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

  12. Optical device terahertz integration in a two-dimensional-three-dimensional heterostructure.

    Science.gov (United States)

    Feng, Zhifang; Lin, Jie; Feng, Shuai

    2018-01-10

    The transmission properties of an off-planar integrated circuit including two wavelength division demultiplexers are designed, simulated, and analyzed in detail by the finite-difference time-domain method. The results show that the wavelength selection for different ports (0.404[c/a] at B 2 port, 0.389[c/a] at B 3 port, and 0.394[c/a] at B 4 port) can be realized by adjusting the parameters. It is especially important that the off-planar integration between two complex devices is also realized. These simulated results give valuable promotions in the all-optical integrated circuit, especially in compact integration.

  13. Integrating mobile devices into nursing curricula: opportunities for implementation using Rogers' Diffusion of Innovation model.

    Science.gov (United States)

    Doyle, Glynda J; Garrett, Bernie; Currie, Leanne M

    2014-05-01

    To identify studies reporting mobile device integration into undergraduate and graduate nursing curricula. To explore the potential use of Rogers' Diffusion of Innovation model as a framework to guide implementation of mobile devices into nursing curricula. Literature review and thematic categorization. Literature published up until June 2013 was searched using EBSCO, PubMed, and Google Scholar. The literature was reviewed for research articles pertaining to mobile device use in nursing education. Research articles were grouped by study design, and articles were classified by: 1) strategies for individual adopters and 2) strategies for organizations. Rogers' Diffusion of Innovation theory was used to categorize reported implementation strategies. Fifty-two research studies were identified. Strategies for implementation were varied, and challenges to integrating mobile devices include lack of administrative support and time/funding to educate faculty as well as students. Overall, the use of mobile devices appears to provide benefits to nursing students; however the research evidence is limited. Anticipating challenges and ensuring a well laid out strategic plan can assist in supporting successful integration of mobile devices. Crown Copyright © 2013. Published by Elsevier Ltd. All rights reserved.

  14. Device- and service profiles for integrated or systems based on open standards

    Directory of Open Access Journals (Sweden)

    Mildner Alexander

    2015-09-01

    Full Text Available Integrated OR systems nowadays are closed and proprietary, so that the interconnection of components from third-party vendors is only possible with high time and cost effort. An integrated operating theatre with open interfaces, giving clinical operators the opportunity to choose individual medical devices from different manufacturers, is currently being developed in the framework of the BMBF (Federal Ministry of Education and Research funded project OR.NET [1]. Actual standards and concepts regarding technical feasibility and accreditation process do not cope with the requirements for modular integration based on an open standard. Therefore, strategies as well as service and device profiles to enable a procedure for risk management and certifiability are in the focus of the project work. Amongst others, a concept for User Interface Profiles (UI-Profiles has been conceived in order to describe medical device functions and the entire user interface regarding Human-Machine-Interaction (HMI characteristics with the aim to identify human-induced risks of central user interfaces. The use of standardized device and service profiles shall allow the manufacturers to integrate their medical devices in the OR.NET network, without disclosing the medical devices’ risk analysis and related confidential knowledge or proprietary information.

  15. Integrated devices for quantum information and quantum simulation with polarization encoded qubits

    Science.gov (United States)

    Sansoni, Linda; Sciarrino, Fabio; Mataloni, Paolo; Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto

    2012-06-01

    The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. The technology for handling polarization-encoded qubits, the most commonly adopted approach, was still missing in quantum optical circuits until the ultrafast laser writing (ULW) technique was adopted for the first time to realize integrated devices able to support and manipulate polarization encoded qubits.1 Thanks to this method, polarization dependent and independent devices can be realized. In particular the maintenance of polarization entanglement was demonstrated in a balanced polarization independent integrated beam splitter1 and an integrated CNOT gate for polarization qubits was realized and carachterized.2 We also exploited integrated optics for quantum simulation tasks: by adopting the ULW technique an integrated quantum walk circuit was realized3 and, for the first time, we investigate how the particle statistics, either bosonic or fermionic, influences a two-particle discrete quantum walk. Such experiment has been realized by adopting two-photon entangled states and an array of integrated symmetric directional couplers. The polarization entanglement was exploited to simulate the bunching-antibunching feature of non interacting bosons and fermions. To this scope a novel three-dimensional geometry for the waveguide circuit is introduced, which allows accurate polarization independent behaviour, maintaining a remarkable control on both phase and balancement of the directional couplers.

  16. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Science.gov (United States)

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-04

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

  17. Integrated-optic current sensors with a multimode interference waveguide device.

    Science.gov (United States)

    Kim, Sung-Moon; Chu, Woo-Sung; Kim, Sang-Guk; Oh, Min-Cheol

    2016-04-04

    Optical current sensors based on polarization-rotated reflection interferometry are demonstrated using polymeric integrated optics and various functional optical waveguide devices. Interferometric sensors normally require bias feedback control for maintaining the operating point, which increases the cost. In order to resolve this constraint of feedback control, a multimode interference (MMI) waveguide device is integrated onto the current-sensor optical chip in this work. From the multiple outputs of the MMI, a 90° phase-shifted transfer function is obtained. Using passive quadrature demodulation, we demonstrate that the sensor could maintain the output signal regardless of the drift in the operating bias-point.

  18. Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

    DEFF Research Database (Denmark)

    Perozziello, Gerardo; Candeloro, Patrizio; De Grazia, Antonio

    2016-01-01

    In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels-where the cells can flow one-by-one -, allowing single...... cell Raman analysis. The microfluidic channel integrates plasmonic nanodimers in a fluidic trapping region. In this way it is possible to perform Enhanced Raman Spectroscopy on single cell. These allow a label-free analysis, providing information about the biochemical content of membrane and cytoplasm...

  19. Electrochemical device

    Science.gov (United States)

    Grimes, Patrick G.; Einstein, Harry; Bellows, Richard J.

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  20. An optoelectronic integrated device including a laser and its driving circuit

    Energy Technology Data Exchange (ETDEWEB)

    Matsueda, H.; Nakano, H.; Tanaka, T.P.

    1984-10-01

    A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realising high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the co-operative operation of the laser and its driving circuit are also presented.

  1. Thermal management in MoS{sub 2} based integrated device using near-field radiation

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Jiebin [Department of Physics, National University of Singapore, Singapore 117546 (Singapore); Zhang, Gang, E-mail: zhangg@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore); Li, Baowen [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

    2015-09-28

    Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

  2. A City Parking Integration System Combined with Cloud Computing Technologies and Smart Mobile Devices

    Science.gov (United States)

    Yeh, Her-Tyan; Chen, Bing-Chang; Wang, Bo-Xun

    2016-01-01

    The current study applied cloud computing technology and smart mobile devices combined with a streaming server for parking lots to plan a city parking integration system. It is also equipped with a parking search system, parking navigation system, parking reservation service, and car retrieval service. With this system, users can quickly find…

  3. A surface-integral-equation approach to the propagation of waves in EBG-based devices

    NARCIS (Netherlands)

    Lancellotti, V.; Tijhuis, A.G.

    2012-01-01

    We combine surface integral equations with domain decomposition to formulate and (numerically) solve the problem of electromagnetic (EM) wave propagation inside finite-sized structures. The approach is of interest for (but not limited to) the analysis of devices based on the phenomenon of

  4. 77 FR 67833 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Notice of Commission...

    Science.gov (United States)

    2012-11-14

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-848] Certain Radio Frequency Integrated Circuits and Devices Containing Same; Notice of Commission Determination Not To Review an Initial Determination Terminating the Investigation in its Entirety AGENCY: U.S. International Trade Commission. ACTION...

  5. Multi-purpose logical device with integrated circuit for the automation of mine water disposal

    Energy Technology Data Exchange (ETDEWEB)

    Pop, E.; Pasculescu, M.

    1980-06-01

    After an analysis of the waste water disposal as an object of automation, the author presents a BASIC-language programme established to simulate the automated control system on a digital computer. Then a multi-purpose logical device with integrated circuits for the automation of the mine water disposal is presented. (In Romanian)

  6. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

    2011-01-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

  7. Integrating wireless sensor networks with CE devices for health care activity tracking in the home environment

    NARCIS (Netherlands)

    Bosman, R.P.; Lukkien, J.J.; Verhoeven, R.

    2009-01-01

    Wireless sensing devices containing limited processing and communication capabilities are becoming available for all sorts of purposes. An important problem is to integrate networks of these sensors with the existing CE en IT infrastructure such that a) data coming out of the sensor network can be

  8. Medical Device Integrated Vital Signs Monitoring Application with Real-Time Clinical Decision Support.

    Science.gov (United States)

    Moqeem, Aasia; Baig, Mirza; Gholamhosseini, Hamid; Mirza, Farhaan; Lindén, Maria

    2018-01-01

    This research involves the design and development of a novel Android smartphone application for real-time vital signs monitoring and decision support. The proposed application integrates market available, wireless and Bluetooth connected medical devices for collecting vital signs. The medical device data collected by the app includes heart rate, oxygen saturation and electrocardiograph (ECG). The collated data is streamed/displayed on the smartphone in real-time. This application was designed by adopting six screens approach (6S) mobile development framework and focused on user-centered approach and considered clinicians-as-a-user. The clinical engagement, consultations, feedback and usability of the application in the everyday practices were considered critical from the initial phase of the design and development. Furthermore, the proposed application is capable to deliver rich clinical decision support in real-time using the integrated medical device data.

  9. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Directory of Open Access Journals (Sweden)

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  10. An architecture for integrating planar and 3D cQED devices

    Energy Technology Data Exchange (ETDEWEB)

    Axline, C.; Reagor, M.; Heeres, R.; Reinhold, P.; Wang, C.; Shain, K.; Pfaff, W.; Chu, Y.; Frunzio, L.; Schoelkopf, R. J. [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

    2016-07-25

    Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high-Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.

  11. Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices

    KAUST Repository

    Li, Wenjie

    2016-09-21

    Building on regenerative photoelectrochemical solar cells and emerging electrochemical redox flow batteries (RFBs), more efficient, scalable, compact, and cost-effective hybrid energy conversion and storage devices could be realized. An integrated photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly charged by solar light without external bias, and discharged like normal RFBs with an energy storage density of 1.15 Wh L−1 and a solar-to-output electricity efficiency (SOEE) of 1.7 % over many cycles. The concept exploits a previously undeveloped design connecting two major energy technologies and promises a general approach for storing solar energy electrochemically with high theoretical storage capacity and efficiency.

  12. Integrated Photoelectrochemical Solar Energy Conversion and Organic Redox Flow Battery Devices.

    Science.gov (United States)

    Li, Wenjie; Fu, Hui-Chun; Li, Linsen; Cabán-Acevedo, Miguel; He, Jr-Hau; Jin, Song

    2016-10-10

    Building on regenerative photoelectrochemical solar cells and emerging electrochemical redox flow batteries (RFBs), more efficient, scalable, compact, and cost-effective hybrid energy conversion and storage devices could be realized. An integrated photoelectrochemical solar energy conversion and electrochemical storage device is developed by integrating regenerative silicon solar cells and 9,10-anthraquinone-2,7-disulfonic acid (AQDS)/1,2-benzoquinone-3,5-disulfonic acid (BQDS) RFBs. The device can be directly charged by solar light without external bias, and discharged like normal RFBs with an energy storage density of 1.15 Wh L -1 and a solar-to-output electricity efficiency (SOEE) of 1.7 % over many cycles. The concept exploits a previously undeveloped design connecting two major energy technologies and promises a general approach for storing solar energy electrochemically with high theoretical storage capacity and efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Integration of human factors and ergonomics during medical device design and development: it's all about communication.

    Science.gov (United States)

    Vincent, Christopher James; Li, Yunqiu; Blandford, Ann

    2014-05-01

    Manufacturers of interactive medical devices, such as infusion pumps, need to ensure that devices minimise the risk of unintended harm during use. However, development teams face challenges in incorporating Human Factors. The aim of the research reported here was to better understand the constraints under which medical device design and development take place. We report the results of a qualitative study based on 19 semi-structured interviews with professionals involved in the design, development and deployment of interactive medical devices. A thematic analysis was conducted. Multiple barriers to designing for safety and usability were identified. In particular, we identified barriers to communication both between the development organisation and the intended users and between different teams within the development organisation. We propose the use of mediating representations. Artefacts such as personas and scenarios, known to provide integration across multiple perspectives, are an essential component of designing for safety and usability. Copyright © 2013 Elsevier Ltd and The Ergonomics Society. All rights reserved.

  14. A Novel Pseudo-PMOS Integrated ISFET Device for Water Quality Monitoring

    Directory of Open Access Journals (Sweden)

    Pawan Whig

    2013-01-01

    Full Text Available The paper presents a performance analysis of novel CMOS Integrated pseudo-PMOS ISFET (PP-ISFET having zero static power dissipation. The main focus is on simulation of power and performance analysis along with the comparison with existing devices, which is used for water quality monitoring. The conventional devices, generally used, consume high power and are not stable for long term monitoring. The conventional device has the drawbacks of low value of slew rate, high power consumption, and nonlinear characteristics, but in this novel design, due to zero static power, less load capacitance on input signals, faster switching, fewer transistors, and higher circuit density, the device exhibits a better slew rate and piecewise linear characteristics and is seen consuming low power of the order of 30 mW. The proposed circuit reduces total power consumption per cycle, increases the speed of operation, is fairly linear, and is simple to implement.

  15. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    International Nuclear Information System (INIS)

    Sawadsaringkarn, Y; Kimura, H; Maezawa, Y; Nakajima, A; Kobayashi, T; Sasagawa, K; Noda, T; Tokuda, T; Ohta, J

    2012-01-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  16. Integrating the results of user research into medical device development: insights from a case study.

    Science.gov (United States)

    Martin, Jennifer L; Barnett, Julie

    2012-07-19

    It is well established that considering users is an important aspect of medical device development. However it is also well established that there are numerous barriers to successfully conducting user research and integrating the results into product development. It is not sufficient to simply conduct user research, it must also be effectively integrated into product development. A case study of the development of a new medical imaging device was conducted to examine in detail how users were involved in a medical device development project. Two user research studies were conducted: a requirements elicitation interview study and an early prototype evaluation using contextual inquiry. A descriptive in situ approach was taken to investigate how these studies contributed to the product development process and how the results of this work influenced the development of the technology. Data was collected qualitatively through interviews with the development team, participant observation at development meetings and document analysis. The focus was on investigating the barriers that exist to prevent user data from being integrated into product development. A number of individual, organisational and system barriers were identified that functioned to prevent the results of the user research being fully integrated into development. The user and technological aspects of development were seen as separate work streams during development. The expectations of the developers were that user research would collect requirements for the appearance of the device, rather than challenge its fundamental concept. The manner that the user data was communicated to the development team was not effective in conveying the significance or breadth of the findings. There are a range of informal and formal organisational processes that can affect the uptake of user data during medical device development. Adopting formal decision making processes may assist manufacturers to take a more integrated and

  17. Towards Integrating Distributed Energy Resources and Storage Devices in Smart Grid.

    Science.gov (United States)

    Xu, Guobin; Yu, Wei; Griffith, David; Golmie, Nada; Moulema, Paul

    2017-02-01

    Internet of Things (IoT) provides a generic infrastructure for different applications to integrate information communication techniques with physical components to achieve automatic data collection, transmission, exchange, and computation. The smart grid, as one of typical applications supported by IoT, denoted as a re-engineering and a modernization of the traditional power grid, aims to provide reliable, secure, and efficient energy transmission and distribution to consumers. How to effectively integrate distributed (renewable) energy resources and storage devices to satisfy the energy service requirements of users, while minimizing the power generation and transmission cost, remains a highly pressing challenge in the smart grid. To address this challenge and assess the effectiveness of integrating distributed energy resources and storage devices, in this paper we develop a theoretical framework to model and analyze three types of power grid systems: the power grid with only bulk energy generators, the power grid with distributed energy resources, and the power grid with both distributed energy resources and storage devices. Based on the metrics of the power cumulative cost and the service reliability to users, we formally model and analyze the impact of integrating distributed energy resources and storage devices in the power grid. We also use the concept of network calculus, which has been traditionally used for carrying out traffic engineering in computer networks, to derive the bounds of both power supply and user demand to achieve a high service reliability to users. Through an extensive performance evaluation, our data shows that integrating distributed energy resources conjointly with energy storage devices can reduce generation costs, smooth the curve of bulk power generation over time, reduce bulk power generation and power distribution losses, and provide a sustainable service reliability to users in the power grid.

  18. Integrating the results of user research into medical device development: insights from a case study

    Directory of Open Access Journals (Sweden)

    Martin Jennifer L

    2012-07-01

    Full Text Available Abstract Background It is well established that considering users is an important aspect of medical device development. However it is also well established that there are numerous barriers to successfully conducting user research and integrating the results into product development. It is not sufficient to simply conduct user research, it must also be effectively integrated into product development. Methods A case study of the development of a new medical imaging device was conducted to examine in detail how users were involved in a medical device development project. Two user research studies were conducted: a requirements elicitation interview study and an early prototype evaluation using contextual inquiry. A descriptive in situ approach was taken to investigate how these studies contributed to the product development process and how the results of this work influenced the development of the technology. Data was collected qualitatively through interviews with the development team, participant observation at development meetings and document analysis. The focus was on investigating the barriers that exist to prevent user data from being integrated into product development. Results A number of individual, organisational and system barriers were identified that functioned to prevent the results of the user research being fully integrated into development. The user and technological aspects of development were seen as separate work streams during development. The expectations of the developers were that user research would collect requirements for the appearance of the device, rather than challenge its fundamental concept. The manner that the user data was communicated to the development team was not effective in conveying the significance or breadth of the findings. Conclusion There are a range of informal and formal organisational processes that can affect the uptake of user data during medical device development. Adopting formal decision

  19. 3D integration of planar crossbar memristive devices with CMOS substrate

    International Nuclear Information System (INIS)

    Lin, Peng; Pi, Shuang; Xia, Qiangfei

    2014-01-01

    Planar memristive devices with bottom electrodes embedded into the substrates were integrated on top of CMOS substrates using nanoimprint lithography to implement hybrid circuits with a CMOL-like architecture. The planar geometry eliminated the mechanically and electrically weak parts, such as kinks in the top electrodes in a traditional crossbar structure, and allowed the use of thicker and thus less resistive metal wires as the bottom electrodes. Planar memristive devices integrated with CMOS have demonstrated much lower programing voltages and excellent switching uniformity. With the inclusion of the Moiré pattern, the integration process has sub-20 nm alignment accuracy, opening opportunities for 3D hybrid circuits in applications in the next generation of memory and unconventional computing. (paper)

  20. Toward Wearable Self-Charging Power Systems: The Integration of Energy-Harvesting and Storage Devices.

    Science.gov (United States)

    Pu, Xiong; Hu, Weiguo; Wang, Zhong Lin

    2018-01-01

    One major challenge for wearable electronics is that the state-of-the-art batteries are inadequate to provide sufficient energy for long-term operations, leading to inconvenient battery replacement or frequent recharging. Other than the pursuit of high energy density of secondary batteries, an alternative approach recently drawing intensive attention from the research community, is to integrate energy-generation and energy-storage devices into self-charging power systems (SCPSs), so that the scavenged energy can be simultaneously stored for sustainable power supply. This paper reviews recent developments in SCPSs with the integration of various energy-harvesting devices (including piezoelectric nanogenerators, triboelectric nanogenerators, solar cells, and thermoelectric nanogenerators) and energy-storage devices, such as batteries and supercapacitors. SCPSs with multiple energy-harvesting devices are also included. Emphasis is placed on integrated flexible or wearable SCPSs. Remaining challenges and perspectives are also examined to suggest how to bring the appealing SCPSs into practical applications in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. A Printed Equilibrium Dialysis Device with Integrated Membranes for Improved Binding Affinity Measurements.

    Science.gov (United States)

    Pinger, Cody W; Heller, Andrew A; Spence, Dana M

    2017-07-18

    Equilibrium dialysis is a simple and effective technique used for investigating the binding of small molecules and ions to proteins. A three-dimensional (3D) printer was used to create a device capable of measuring binding constants between a protein and a small ion based on equilibrium dialysis. Specifically, the technology described here enables the user to customize an equilibrium dialysis device to fit their own experiments by choosing membranes of various material and molecular-weight cutoff values. The device has dimensions similar to that of a standard 96-well plate, thus being amenable to automated sample handlers and multichannel pipettes. The device consists of a printed base that hosts multiple windows containing a porous regenerated-cellulose membrane with a molecular-weight cutoff of ∼3500 Da. A key step in the fabrication process is a print-pause-print approach for integrating membranes directly into the windows subsequently inserted into the base. The integrated membranes display no leaking upon placement into the base. After characterizing the system's requirements for reaching equilibrium, the device was used to successfully measure an equilibrium dissociation constant for Zn 2+ and human serum albumin (K d = (5.62 ± 0.93) × 10 -7 M) under physiological conditions that is statistically equal to the constants reported in the literature.

  2. Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

    International Nuclear Information System (INIS)

    So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

    2013-01-01

    We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

  3. Monolithic integration of optical waveguides for absorbance detection in microfabricated electrophoresis devices

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Petersen, Nickolaj Jacob; Hübner, Jörg

    2001-01-01

    . The waveguides on the device were connected to optical fibers, which enabled alignment free operation due to the absence of free-space optics. A 750 mum long U-shaped detection cell was used to facilitate longitudinal absorption detection. To minimize geometrically induced band broadening at the turn in the U......The fabrication and performance of an electrophoretic separation chip with integrated of optical waveguides for absorption detection is presented. The device was fabricated on a silicon substrate by standard microfabrication techniques with the use of two photolithographic mask steps...

  4. The Integration of GPS Navigator Device with Vehicles Tracking System for Rental Cars Firms

    OpenAIRE

    Omarah O. Alharaki; Fahad S. Alaieri; Akram M. Zeki

    2010-01-01

    The aim of this research is to integrate the GPS tracking system (tracking device and web-based application) with GPS navigator for rental cars, allowing the company to use various applications to monitor and manage the cars. This is enable the firms and customers to communicate with each other via the GPS navigator. The system should be developed by applying new features in GPS tracking application devices in vehicles. This paper also proposes new features that can be applied to the GPS Navi...

  5. Results of wind tunnel tests of an ASRM configured 0.03 scale Space Shuttle integrated vehicle model (47-OTS) in the AEDC 16-foot Transonic wind tunnel (IA613A), volume 1

    Science.gov (United States)

    Marroquin, J.; Lemoine, P.

    1992-01-01

    An experimental Aerodynamic and Aero-Acoustic loads data base was obtained at transonic Mach numbers for the Space Shuttle Launch Vehicle configured with the ASRM Solid Rocket Boosters as an increment to the current flight configuration (RSRB). These data were obtained during transonic wind tunnel tests (IA 613A) conducted in the Arnold Engineering Development Center 16-Foot transonic propulsion wind tunnel from March 27, 1991 through April 12, 1991. This test is the first of a series of two tests covering the Mach range from 0.6 to 3.5. Steady state surface static and fluctuating pressure distributions over the Orbiter, External Tank and Solid Rocket Boosters of the Shuttle Integrated Vehicle were measured. Total Orbiter forces, Wing forces and Elevon hinge moments were directly measured as well from force balances. Two configurations of Solid Rocket Boosters were tested, the Redesigned Solid Rocket Booster (RSRB) and the Advanced Solid Rocket Motor (ASRM). The effects of the position (i.e. top, bottom, top and bottom) of the Integrated Electronics Assembly (IEA) box, mounted on the SRB attach ring, were obtained on the ASRM configured model. These data were obtained with and without Solid Plume Simulators which, when used, matched as close as possible the flight derived pressures on the Orbiter and External Tank base. Data were obtained at Mach numbers ranging from 0.6 to 1.55 at a Unit Reynolds Number of 2.5 million per foot through model angles of attack from -8 to +4 degrees at sideslip angles of 0, +4 and -4 degrees.

  6. Results of wind tunnel tests of an ASRM configured 0.03 scale Space Shuttle integrated vehicle model (47-OTS) in the AEDC 16-foot transonic wind tunnel, volume 2

    Science.gov (United States)

    Marroquin, J.; Lemoine, P.

    1992-01-01

    An experimental Aerodynamic and Aero-Acoustic loads data base was obtained at transonic Mach numbers for the Space Shuttle Launch Vehicle configured with the ASRM Solid Rocket Boosters as an increment to the current flight configuration (RSRB). These data were obtained during transonic wind tunnel tests (IA 613A) conducted in the Arnold Engineering Development Center 16-Foot transonic propulsion wind tunnel from March 27, 1991 through April 12, 1991. This test is the first of a series of two tests covering the Mach range from 0.6 to 3.5. Steady state surface static and fluctuating pressure distributions over the Orbiter, External Tank and Solid Rocket Boosters of the Shuttle Integrated Vehicle were measured. Total Orbiter forces, Wing forces and Elevon hinge moments were directly measured as well from force balances. Two configurations of Solid Rocket Boosters were tested, the Redesigned Solid Rocket Booster (RSRB) and the Advanced Solid Rocket Motor (ASRM). The effects of the position (i.e., top, bottom, top and bottom) of the Integrated Electronics Assembly (IEA) box, mounted on the SRB attach ring, were obtained on the ASRM configured model. These data were obtained with and without Solid Plume Simulators which, when used, matched as close as possible the flight derived pressures on the Orbiter and External Tank base. Data were obtained at Mach numbers ranging from 0.6 to 1.55 at a Unit Reynolds Number of 2.5 million per foot through model angles of attack from -8 to +4 degrees at sideslip angles of 0, +4 and -4 degrees.

  7. Closed-loop model: An optimization of integrated thin-film magnetic devices

    Energy Technology Data Exchange (ETDEWEB)

    El-Ghazaly, Amal, E-mail: amale@stanford.edu [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Sato, Noriyuki [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); White, Robert M. [Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Wang, Shan X. [Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States)

    2017-06-15

    Highlights: • An analytical model for inductance of thin-film magnetic devices was developed. • Different device topologies and magnetic permeabilities were addressed. • Inductance of various topologies were calculated and compared with simulation. • The model predicts simulated values with excellent accuracy. - Abstract: A generic analytical model has been developed to fully describe the flux closure through magnetic inductors. The model was applied to multiple device topologies including solenoidal single return path and dual return path inductors as well as spiral magnetic inductors for a variety of permeabilities and dimensions. The calculated inductance values from the analytical model were compared with simulated results for each of the analyzed device topologies and found to agree within 0.1 nH for the range of typical thin-film magnetic permeabilities (∼10{sup 2} to 10{sup 3}). Furthermore, the model can be used to evaluate behavior in other integrated or discrete magnetic devices with either non-isotropic or isotropic permeability and used to produce more efficient device designs in the future.

  8. An Integrated Quantum Dot Barcode Smartphone Optical Device for Wireless Multiplexed Diagnosis of Infected Patients

    Science.gov (United States)

    Ming, Kevin

    Integrating mobile-cellular devices with multiplex molecular diagnostics can potentially provide the most powerful platform for tracking, managing and preventing the transmission of infectious diseases. With over 6.9 billion subscriptions globally, handheld mobile-cellular devices can be programmed to spatially map, temporally track, and transmit information on infections over wide geographical space and boundaries. Current cell phone diagnostic technologies have poor limit of detection, dynamic range, and cannot detect multiple pathogen targets simultaneously, limiting their utility to single infections with high load. Here we combined recent advances in quantum dot barcode technology for molecular detection with smartphones to engineer a simple and low-cost chip-based wireless multiplex diagnostic device. We validated our device using a variety of synthetic genomic targets for the respiratory virus and blood-borne pathogens, and demonstrated that it could detect clinical samples after simple amplification. More importantly, we confirmed that the device is capable of detecting patients infected with a single or multiple infectious pathogens (e.g., HIV and hepatitis B) in a single test. This device advances the capacity for global surveillance of infectious diseases and has the potential to accelerate knowledge exchange-transfer of emerging or exigent disease threats with healthcare and military organizations in real-time.

  9. The extent to which path-integral models account for evanescent (tunneling) and complex (near-field) waves

    Science.gov (United States)

    Ranfagni, Anedio; Mugnai, Daniela; Cacciari, Ilaria

    2018-05-01

    The usefulness of a stochastic approach in determining time scales in tunneling processes (mainly, but not only, in the microwave range) is reconsidered and compared with a different approach to these kinds of processes, based on Feynman's transition elements. This latter method is found to be particularly suitable for interpreting situations in the near field, as results from some experimental cases considered here.

  10. Electron heating by photon-assisted tunneling in niobium terahertz mixers with integrated niobium titanium nitride striplines

    NARCIS (Netherlands)

    Leone, B; Gao, [No Value; Klapwijk, TM; Jackson, BD; Laauwen, WM; de Lange, G

    2001-01-01

    We describe the gap voltage depression and current-voltage (I-V) characteristics in pumped niobium superconductor-insulator-superconductor junction with niobium titanium nitride tuning stripline by introducing an electron heating power contribution resulting from the photon-assisted tunneling

  11. Use of integrity control and automatic start of reserve in a multi-channel temperature and flow rate control device

    International Nuclear Information System (INIS)

    Strzalkowski, L.

    1975-01-01

    A way to increase reliability of process quantity control is control of the integrity of the control plants themselves. The possibilities of integrity control on control devices having simply duplicated control channels or working on the basis of the ''two-from-three'' principle are valued. A highly reliable integrity control is possible by use of test signals. For an appropriate control device, structure and function of the assemblies are described. The integrity control device may be used in the water coolant temperature and flow rate control system for all technological channels of the research reactor ''Maria''

  12. Integration of dispenser-printed ultra-low-voltage thermoelectric and energy storage devices

    International Nuclear Information System (INIS)

    Wang, Z; Chen, A; Winslow, R; Madan, D; Nill, M; Wright, P K; Juang, R C; Evans, J W

    2012-01-01

    This paper reports on an integrated energy harvesting prototype that consists of dispenser-printed thermoelectric energy harvesting and electrochemical energy storage devices. Parallel-connected thermoelectric devices with low internal resistances were designed, fabricated and characterized. The use of a commercially available dc-to-dc converter was explored to step-up a 27.1 mV input voltage from a printed thermoelectric device to a regulated 2.34 V output at a maximum of 34% conversion efficiency. The regulated power succeeds in charging dispenser-printed, zinc-based micro-batteries with charging efficiencies of up to 67%. The prototype presented in this work demonstrates the feasibility of deploying a printable, cost-effective and perpetual power solution for practical wireless sensor network applications. (paper)

  13. Microfluidic device for continuous single cells analysis via Raman spectroscopy enhanced by integrated plasmonic nanodimers

    KAUST Repository

    Perozziello, Gerardo

    2015-12-11

    In this work a Raman flow cytometer is presented. It consists of a microfluidic device that takes advantages of the basic principles of Raman spectroscopy and flow cytometry. The microfluidic device integrates calibrated microfluidic channels- where the cells can flow one-by-one -, allowing single cell Raman analysis. The microfluidic channel integrates plasmonic nanodimers in a fluidic trapping region. In this way it is possible to perform Enhanced Raman Spectroscopy on single cell. These allow a label-free analysis, providing information about the biochemical content of membrane and cytoplasm of the each cell. Experiments are performed on red blood cells (RBCs), peripheral blood lymphocytes (PBLs) and myelogenous leukemia tumor cells (K562). © 2015 Optical Society of America.

  14. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  15. An integrated fiber and stone basket device for use in Thulium fiber laser lithotripsy

    Science.gov (United States)

    Wilson, Christopher R.; Hutchens, Thomas C.; Hardy, Luke A.; Irby, Pierce B.; Fried, Nathaniel M.

    2014-03-01

    The Thulium fiber laser (TFL) is being explored as an alternative laser lithotripter to the Holmium:YAG laser. The TFL's superior near-single mode beam profile enables higher power transmission through smaller fibers with reduced proximal fiber tip damage. Recent studies have also reported that attaching hollow steel tubing to the distal fiber tip decreases fiber degradation and burn-back without compromising stone ablation rates. However, significant stone retropulsion was observed, which increased with pulse rate. In this study, the hollow steel tip fiber design was integrated with a stone basket to minimize stone retropulsion during ablation. A device was constructed consisting of a 100-μm-core, 140-μm-OD silica fiber outfitted with 5-mm-long stainless steel tubing at the distal tip, and integrated with a 1.3-Fr (0.433-mm-OD) disposable nitinol wire basket, to form an overall 1.9-Fr (0.633-mm- OD) integrated device. This compact design may provide several potential advantages including increased flexibility, higher saline irrigation rates through the ureteroscope working channel, and reduced fiber tip degradation compared to separate fiber and stone basket manipulation. TFL pulse energy of 31.5 mJ with 500 μs pulse duration and pulse rate of 500 Hz was delivered through the integrated fiber/basket device in contact with human uric acid stones, ex vivo. TFL stone ablation rates measured 1.5 +/- 0.2 mg/s, comparable to 1.7 +/- 0.3 mg/s (P > 0.05) using standard bare fiber tips separately with a stone basket. With further development, this device may be useful for minimizing stone retropulsion, thus enabling more efficient TFL lithotripsy at higher pulse rates.

  16. Single integrated device for optical CDMA code processing in dual-code environment.

    Science.gov (United States)

    Huang, Yue-Kai; Glesk, Ivan; Greiner, Christoph M; Iazkov, Dmitri; Mossberg, Thomas W; Wang, Ting; Prucnal, Paul R

    2007-06-11

    We report on the design, fabrication and performance of a matching integrated optical CDMA encoder-decoder pair based on holographic Bragg reflector technology. Simultaneous encoding/decoding operation of two multiple wavelength-hopping time-spreading codes was successfully demonstrated and shown to support two error-free OCDMA links at OC-24. A double-pass scheme was employed in the devices to enable the use of longer code length.

  17. 77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

    Science.gov (United States)

    2012-03-29

    ...Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Semiconductor Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is soliciting comments on any public interest issues raised by the complaint or complainant's filing under section 210.8(b) of the Commission's Rules of Practice and Procedure (19 CFR 210.8(b)).

  18. 78 FR 10635 - Certain Integrated Circuit Devices and Products Containing the Same; Notice of Receipt of...

    Science.gov (United States)

    2013-02-14

    ...Notice is hereby given that the U.S. International Trade Commission has received a complaint entitled Certain Integrated Circuit Devices and Products Containing the Same, DN 2938; the Commission is soliciting comments on any public interest issues raised by the complaint or complainant's filing under section 210.8(b) of the Commission's Rules of Practice and Procedure (19 CFR 210.8(b)).

  19. Fabricating a multi-level barrier-integrated microfluidic device using grey-scale photolithography

    International Nuclear Information System (INIS)

    Nam, Yoonkwang; Kim, Minseok; Kim, Taesung

    2013-01-01

    Most polymer-replica-based microfluidic devices are mainly fabricated by using standard soft-lithography technology so that multi-level masters (MLMs) require multiple spin-coatings, mask alignments, exposures, developments, and bakings. In this paper, we describe a simple method for fabricating MLMs for planar microfluidic channels with multi-level barriers (MLBs). A single photomask is necessary for standard photolithography technology to create a polydimethylsiloxane grey-scale photomask (PGSP), which adjusts the total amount of UV absorption in a negative-tone photoresist via a wide range of dye concentrations. Since the PGSP in turn adjusts the degree of cross-linking of the photoresist, this method enables the fabrication of MLMs for an MLB-integrated microfluidic device. Since the PGSP-based soft-lithography technology provides a simple but powerful fabrication method for MLBs in a microfluidic device, we believe that the fabrication method can be widely used for micro total analysis systems that benefit from MLBs. We demonstrate an MLB-integrated microfluidic device that can separate microparticles. (paper)

  20. Integrated visualization of simulation results and experimental devices in virtual-reality space

    International Nuclear Information System (INIS)

    Ohtani, Hiroaki; Ishiguro, Seiji; Shohji, Mamoru; Kageyama, Akira; Tamura, Yuichi

    2011-01-01

    We succeeded in integrating the visualization of both simulation results and experimental device data in virtual-reality (VR) space using CAVE system. Simulation results are shown using Virtual LHD software, which can show magnetic field line, particle trajectory, and isosurface of plasma pressure of the Large Helical Device (LHD) based on data from the magnetohydrodynamics equilibrium simulation. A three-dimensional mouse, or wand, determines the initial position and pitch angle of a drift particle or the starting point of a magnetic field line, interactively in the VR space. The trajectory of a particle and the stream-line of magnetic field are calculated using the Runge-Kutta-Huta integration method on the basis of the results obtained after pointing the initial condition. The LHD vessel is objectively visualized based on CAD-data. By using these results and data, the simulated LHD plasma can be interactively drawn in the objective description of the LHD experimental vessel. Through this integrated visualization, it is possible to grasp the three-dimensional relationship of the positions between the device and plasma in the VR space, opening a new path in contribution to future research. (author)

  1. Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

    International Nuclear Information System (INIS)

    Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

    2016-01-01

    The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

  2. Neuron Stimulation Device Integrated with Silicon Nanowire-Based Photodetection Circuit on a Flexible Substrate

    Directory of Open Access Journals (Sweden)

    Suk Won Jung

    2016-12-01

    Full Text Available This paper proposes a neural stimulation device integrated with a silicon nanowire (SiNW-based photodetection circuit for the activation of neurons with light. The proposed device is comprised of a voltage divider and a current driver in which SiNWs are used as photodetector and field-effect transistors; it has the functions of detecting light, generating a stimulation signal in proportion to the light intensity, and transmitting the signal to a micro electrode. To show the applicability of the proposed neural stimulation device as a high-resolution retinal prosthesis system, a high-density neural stimulation device with a unit cell size of 110 × 110 μ m and a resolution of 32 × 32 was fabricated on a flexible film with a thickness of approximately 50 μm. Its effectiveness as a retinal stimulation device was then evaluated using a unit cell in an in vitro animal experiment involving the retinal tissue of retinal Degeneration 1 (rd1 mice. Experiments wherein stimulation pulses were applied to the retinal tissues successfully demonstrate that the number of spikes in neural response signals increases in proportion to light intensity.

  3. Fabrication and Characterization of All-Polystyrene Microfluidic Devices with Integrated Electrodes and Tubing.

    Science.gov (United States)

    Pentecost, Amber M; Martin, R Scott

    2015-01-01

    A new method of fabricating all-polystyrene devices with integrated electrodes and fluidic tubing is described. As opposed to expensive polystyrene (PS) fabrication techniques that use hot embossing and bonding with a heated lab press, this approach involves solvent-based etching of channels and lamination-based bonding of a PS cover, all of which do not need to occur in a clean room. PS has been studied as an alternative microchip substrate to PDMS, as it is more hydrophilic, biologically compatible in terms of cell adhesion, and less prone to absorption of hydrophobic molecules. The etching/lamination-based method described here results in a variety of all-PS devices, with or without electrodes and tubing. To characterize the devices, micrographs of etched channels (straight and intersected channels) were taken using confocal and scanning electron microscopy. Microchip-based electrophoresis with repetitive injections of fluorescein was conducted using a three-sided PS (etched pinched, twin-tee channel) and one-sided PDMS device. Microchip-based flow injection analysis, with dopamine and NO as analytes, was used to characterize the performance of all-PS devices with embedded tubing and electrodes. Limits of detection for dopamine and NO were 130 nM and 1.8 μM, respectively. Cell immobilization studies were also conducted to assess all-PS devices for cellular analysis. This paper demonstrates that these easy to fabricate devices can be attractive alternative to other PS fabrication methods for a wide variety of analytical and cell culture applications.

  4. Integrated Lateral Flow Device for Flow Control with Blood Separation and Biosensing

    Directory of Open Access Journals (Sweden)

    Veronica Betancur

    2017-12-01

    Full Text Available Lateral flow devices are versatile and serve a wide variety of purposes, including medical, agricultural, environmental, and military applications. Yet, the most promising opportunities of these devices for diagnosis might reside in point-of-care (POC applications. Disposable paper-based lateral flow strips have been of particular interest, because they utilize low-cost materials and do not require expensive fabrication instruments. However, there are constraints on tuning flow rates and immunoassays functionalization in papers, as well as technical challenges in sensors’ integration and concentration units for low-abundant molecular detection. In the present work, we demonstrated an integrated lateral flow device that applied the capillary forces with functionalized polymer-based microfluidics as a strategy to realize a portable, simplified, and self-powered lateral flow device (LFD. The polydimethylsiloxane (PDMS surface was rendered hydrophilic via functionalization with different concentrations of Pluronic F127. Controlled flow is a key variable for immunoassay-based applications for providing enough time for protein binding to antibodies. The flow rate of the integrated LFD was regulated by the combination of multiple factors, including Pluronic F127 functionalized surface properties and surface treatments of microchannels, resistance of the integrated flow resistor, the dimensions of the microstructures and the spacing between them in the capillary pump, the contact angles, and viscosity of the fluids. Various plasma flow rates were regulated and achieved in the whole device. The LFD combined the ability to separate high quality plasma from human whole blood by using a highly asymmetric plasma separation membrane, and created controlled and steady fluid flow using capillary forces produced by the interfacial tensions. Biomarker immunoglobulin G (IgG detection from plasma was demonstrated with a graphene nanoelectronic sensor integrated

  5. Novel developments in mobile sensing based on the integration of microfluidic devices and smartphones.

    Science.gov (United States)

    Yang, Ke; Peretz-Soroka, Hagit; Liu, Yong; Lin, Francis

    2016-03-21

    Portable electronic devices and wireless communication systems enable a broad range of applications such as environmental and food safety monitoring, personalized medicine and healthcare management. Particularly, hybrid smartphone and microfluidic devices provide an integrated solution for the new generation of mobile sensing applications. Such mobile sensing based on microfluidic devices (broadly defined) and smartphones (MS(2)) offers a mobile laboratory for performing a wide range of bio-chemical detection and analysis functions such as water and food quality analysis, routine health tests and disease diagnosis. MS(2) offers significant advantages over traditional platforms in terms of test speed and control, low cost, mobility, ease-of-operation and data management. These improvements put MS(2) in a promising position in the fields of interdisciplinary basic and applied research. In particular, MS(2) enables applications to remote in-field testing, homecare, and healthcare in low-resource areas. The marriage of smartphones and microfluidic devices offers a powerful on-chip operating platform to enable various bio-chemical tests, remote sensing, data analysis and management in a mobile fashion. The implications of such integration are beyond telecommunication and microfluidic-related research and technology development. In this review, we will first provide the general background of microfluidic-based sensing, smartphone-based sensing, and their integration. Then, we will focus on several key application areas of MS(2) by systematically reviewing the important literature in each area. We will conclude by discussing our perspectives on the opportunities, issues and future directions of this emerging novel field.

  6. Novel Developments of Mobile Sensing Based on the Integration of Microfluidic Devices and Smartphone

    Science.gov (United States)

    Yang, Ke; Peretz-Soroka, Hagit; Liu, Yong; Lin, Francis

    2016-01-01

    Portable electronic devices and wireless communication systems enable a broad range of applications such as environmental and food safety monitoring, personalized medicine and healthcare management. Particularly, hybrid smartphone and microfluidic devices provide an integrated solution for the new generation of mobile sensing applications. Such mobile sensing based on microfluidic devices (broadly defined) and smartphones (MS2) offers a mobile laboratory for performing a wide range of bio-chemical detection and analysis functions such as water and food quality analysis, routine health tests and disease diagnosis. MS2 offers significant advantages over traditional platforms in terms of test speed and control, low cost, mobility, ease-of-operation and data management. These improvements put MS2 in a promising position in the fields of interdisciplinary basic and applied research. In particular, MS2 enables applications to remote infield testing, homecare, and healthcare in low-resource areas. The marriage of smartphones and microfluidic devices offers a powerful on-chip operating platform to enable various bio-chemical tests, remote sensing, data analysis and management in a mobile fashion. The implications of such integration are beyond telecommunication and microfluidic-related research and technology development. In this review, we will first provide the general background of microfluidic-based sensing, smartphone-based sensing, and their integration. Then, we will focus on several key application areas of MS2 by systematically reviewing the important literature in each area. We will conclude by discussing our perspectives on the opportunities, issues and future directions of this emerging novel field. PMID:26899264

  7. Process automation system for integration and operation of Large Volume Plasma Device

    International Nuclear Information System (INIS)

    Sugandhi, R.; Srivastava, P.K.; Sanyasi, A.K.; Srivastav, Prabhakar; Awasthi, L.M.; Mattoo, S.K.

    2016-01-01

    Highlights: • Analysis and design of process automation system for Large Volume Plasma Device (LVPD). • Data flow modeling for process model development. • Modbus based data communication and interfacing. • Interface software development for subsystem control in LabVIEW. - Abstract: Large Volume Plasma Device (LVPD) has been successfully contributing towards understanding of the plasma turbulence driven by Electron Temperature Gradient (ETG), considered as a major contributor for the plasma loss in the fusion devices. Large size of the device imposes certain difficulties in the operation, such as access of the diagnostics, manual control of subsystems and large number of signals monitoring etc. To achieve integrated operation of the machine, automation is essential for the enhanced performance and operational efficiency. Recently, the machine is undergoing major upgradation for the new physics experiments. The new operation and control system consists of following: (1) PXIe based fast data acquisition system for the equipped diagnostics; (2) Modbus based Process Automation System (PAS) for the subsystem controls and (3) Data Utilization System (DUS) for efficient storage, processing and retrieval of the acquired data. In the ongoing development, data flow model of the machine’s operation has been developed. As a proof of concept, following two subsystems have been successfully integrated: (1) Filament Power Supply (FPS) for the heating of W- filaments based plasma source and (2) Probe Positioning System (PPS) for control of 12 number of linear probe drives for a travel length of 100 cm. The process model of the vacuum production system has been prepared and validated against acquired pressure data. In the next upgrade, all the subsystems of the machine will be integrated in a systematic manner. The automation backbone is based on 4-wire multi-drop serial interface (RS485) using Modbus communication protocol. Software is developed on LabVIEW platform using

  8. Process automation system for integration and operation of Large Volume Plasma Device

    Energy Technology Data Exchange (ETDEWEB)

    Sugandhi, R., E-mail: ritesh@ipr.res.in; Srivastava, P.K.; Sanyasi, A.K.; Srivastav, Prabhakar; Awasthi, L.M.; Mattoo, S.K.

    2016-11-15

    Highlights: • Analysis and design of process automation system for Large Volume Plasma Device (LVPD). • Data flow modeling for process model development. • Modbus based data communication and interfacing. • Interface software development for subsystem control in LabVIEW. - Abstract: Large Volume Plasma Device (LVPD) has been successfully contributing towards understanding of the plasma turbulence driven by Electron Temperature Gradient (ETG), considered as a major contributor for the plasma loss in the fusion devices. Large size of the device imposes certain difficulties in the operation, such as access of the diagnostics, manual control of subsystems and large number of signals monitoring etc. To achieve integrated operation of the machine, automation is essential for the enhanced performance and operational efficiency. Recently, the machine is undergoing major upgradation for the new physics experiments. The new operation and control system consists of following: (1) PXIe based fast data acquisition system for the equipped diagnostics; (2) Modbus based Process Automation System (PAS) for the subsystem controls and (3) Data Utilization System (DUS) for efficient storage, processing and retrieval of the acquired data. In the ongoing development, data flow model of the machine’s operation has been developed. As a proof of concept, following two subsystems have been successfully integrated: (1) Filament Power Supply (FPS) for the heating of W- filaments based plasma source and (2) Probe Positioning System (PPS) for control of 12 number of linear probe drives for a travel length of 100 cm. The process model of the vacuum production system has been prepared and validated against acquired pressure data. In the next upgrade, all the subsystems of the machine will be integrated in a systematic manner. The automation backbone is based on 4-wire multi-drop serial interface (RS485) using Modbus communication protocol. Software is developed on LabVIEW platform using

  9. Very high frame rate volumetric integration of depth images on mobile devices.

    Science.gov (United States)

    Kähler, Olaf; Adrian Prisacariu, Victor; Yuheng Ren, Carl; Sun, Xin; Torr, Philip; Murray, David

    2015-11-01

    Volumetric methods provide efficient, flexible and simple ways of integrating multiple depth images into a full 3D model. They provide dense and photorealistic 3D reconstructions, and parallelised implementations on GPUs achieve real-time performance on modern graphics hardware. To run such methods on mobile devices, providing users with freedom of movement and instantaneous reconstruction feedback, remains challenging however. In this paper we present a range of modifications to existing volumetric integration methods based on voxel block hashing, considerably improving their performance and making them applicable to tablet computer applications. We present (i) optimisations for the basic data structure, and its allocation and integration; (ii) a highly optimised raycasting pipeline; and (iii) extensions to the camera tracker to incorporate IMU data. In total, our system thus achieves frame rates up 47 Hz on a Nvidia Shield Tablet and 910 Hz on a Nvidia GTX Titan XGPU, or even beyond 1.1 kHz without visualisation.

  10. Heterogenous integration of a thin-film GaAs photodetector and a microfluidic device on a silicon substrate

    International Nuclear Information System (INIS)

    Song, Fuchuan; Xiao, Jing; Udawala, Fidaali; Seo, Sang-Woo

    2011-01-01

    In this paper, heterogeneous integration of a III–V semiconductor thin-film photodetector (PD) with a microfluidic device is demonstrated on a SiO 2 –Si substrate. Thin-film format of optical devices provides an intimate integration of optical functions with microfluidic devices. As a demonstration of a multi-material and functional system, the biphasic flow structure in the polymeric microfluidic channels was co-integrated with a III–V semiconductor thin-film PD. The fluorescent drops formed in the microfluidic device are successfully detected with an integrated thin-film PD on a silicon substrate. The proposed three-dimensional integration structure is an alternative approach to combine optical functions with microfluidic functions on silicon-based electronic functions.

  11. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  12. An electrically actuated imperfect microbeam: Dynamical integrity for interpreting and predicting the device response

    KAUST Repository

    Ruzziconi, Laura

    2013-02-20

    In this study we deal with a microelectromechanical system (MEMS) and develop a dynamical integrity analysis to interpret and predict the experimental response. The device consists of a clamped-clamped polysilicon microbeam, which is electrostatically and electrodynamically actuated. It has non-negligible imperfections, which are a typical consequence of the microfabrication process. A single-mode reduced-order model is derived and extensive numerical simulations are performed in a neighborhood of the first symmetric natural frequency, via frequency response diagrams and behavior chart. The typical softening behavior is observed and the overall scenario is explored, when both the frequency and the electrodynamic voltage are varied. We show that simulations based on direct numerical integration of the equation of motion in time yield satisfactory agreement with the experimental data. Nevertheless, these theoretical predictions are not completely fulfilled in some aspects. In particular, the range of existence of each attractor is smaller in practice than in the simulations. This is because these theoretical curves represent the ideal limit case where disturbances are absent, which never occurs under realistic conditions. A reliable prediction of the actual (and not only theoretical) range of existence of each attractor is essential in applications. To overcome this discrepancy and extend the results to the practical case where disturbances exist, a dynamical integrity analysis is developed. After introducing dynamical integrity concepts, integrity profiles and integrity charts are drawn. They are able to describe if each attractor is robust enough to tolerate the disturbances. Moreover, they detect the parameter range where each branch can be reliably observed in practice and where, instead, becomes vulnerable, i.e. they provide valuable information to operate the device in safe conditions according to the desired outcome and depending on the expected disturbances

  13. Fabricating process of hollow out-of-plane Ni microneedle arrays and properties of the integrated microfluidic device

    Science.gov (United States)

    Zhu, Jun; Cao, Ying; Wang, Hong; Li, Yigui; Chen, Xiang; Chen, Di

    2013-07-01

    Although microfluidic devices that integrate microfluidic chips with hollow out-of-plane microneedle arrays have many advantages in transdermal drug delivery applications, difficulties exist in their fabrication due to the special three-dimensional structures of hollow out-of-plane microneedles. A new, cost-effective process for the fabrication of a hollow out-of-plane Ni microneedle array is presented. The integration of PDMS microchips with the Ni hollow microneedle array and the properties of microfluidic devices are also presented. The integrated microfluidic devices provide a new approach for transdermal drug delivery.

  14. Development of an Integrated Countermeasure Device for Long Duration Space Flight and Exploration Missions

    Science.gov (United States)

    Lee, S. M. C.; Streeper, T.; Spiering, B. A.; Loehr, J. A.; Guilliams, M. E.; Bloomberg, J. J.; Mulavara, A. P.; Cavanagh, P. R.; Lang, T.

    2010-01-01

    Musculoskeletal, cardiovascular, and sensorimotor deconditioning have been observed consistently in astronauts and cosmonauts following long-duration spaceflight. Studies in bed rest, a spaceflight analog, have shown that high intensity resistive or aerobic exercise attenuates or prevents musculoskeletal and cardiovascular deconditioning, respectively, but complete protection has not been achieved during spaceflight. Exercise countermeasure hardware used during earlier International Space Station (ISS) missions included a cycle ergometer, a treadmill, and the interim resistive exercise device (iRED). Effectiveness of the countermeasures may have been diminished by limited loading characteristics of the iRED as well as speed restrictions and subject harness discomfort during treadmill exercise. The Advanced Resistive Exercise Device (ARED) and the second generation treadmill were designed to address many of the limitations of their predecessors, and anecdotal reports from ISS crews suggest that their conditioning is better preserved since the new hardware was delivered in 2009. However, several countermeasure devices to protect different physiologic systems will not be practical during exploration missions when the available volume and mass will be severely restricted. The combined countermeasure device (CCD) integrates a suite of hardware into one device intended to prevent spaceflight-induced musculoskeletal, cardiovascular, and sensorimotor deconditioning. The CCD includes pneumatic loading devices with attached cables for resistive exercise, a cycle for aerobic exercise, and a 6 degree of freedom motion platform for balance training. In a proof of concept test, ambulatory untrained subjects increased muscle strength (58%) as well as aerobic capacity (26%) after 12-weeks of exercise training with the CCD (without balance training), improvements comparable to those observed with traditional exercise training. These preliminary results suggest that this CCD can

  15. System-on-fluidics immunoassay device integrating wireless radio-frequency-identification sensor chips.

    Science.gov (United States)

    Yazawa, Yoshiaki; Oonishi, Tadashi; Watanabe, Kazuki; Shiratori, Akiko; Funaoka, Sohei; Fukushima, Masao

    2014-09-01

    A simple and sensitive point-of-care-test (POCT) device for chemiluminescence (CL) immunoassay was devised and tested. The device consists of a plastic flow-channel reactor and two wireless-communication sensor chips, namely, a photo-sensor chip and a temperature-sensor chip. In the flow-channel reactor, a target antigen is captured by an antibody immobilized on the inner wall of the flow-channel and detected with enzyme labeled antibody by using CL substrate. The CL signal corresponding to the amount of antigen is measured by a newly developed radio-frequency-identification (RFID) sensor, which enables batteryless operation and wireless data communication with an external reader. As for the POCT device, its usage environment, especially temperature, varies for each measurement. Hence, temperature compensation is a key issue in regard to eliminating dark-signal fluctuation, which is a major factor in deterioration of the precision of the POCT device. A two-stage temperature-compensation scheme was adopted. As for the first stage, the signals of two photodiodes, one with an open window and one with a sealed window, integrated on the photo-sensor chip are differentiated to delete the dark signal. As for the second stage, the differentiated signal fluctuation caused by a temperature variation is compensated by using the other sensor chip (equipped with a temperature sensor). The dark-level fluctuation caused by temperature was reduced from 0.24 to 0.02 pA/°C. The POCT device was evaluated as a CL immunoassay of thyroid-stimulating hormone (TSH). The flow rate of the CL reagent in the flow channel was optimized. As a result, the detection limit of the POCT device was 0.08 ng/ml (i.e., 0.4 μIU/ml). Copyright © 2014 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

  16. Integration of Mobile Devices to Facilitate Patient Care and Teaching During Family-Centered Rounds.

    Science.gov (United States)

    Byrd, Angela S; McMahon, Pamela M; Vath, Richard J; Bolton, Michael; Roy, Melissa

    2018-01-01

    The increasing prevalence of mobile devices in clinical settings has the potential to improve both patient care and education. The benefits are particularly promising in the context of family-centered rounds in inpatient pediatric settings. We aimed to increase mobile device usage by inpatient rounding teams by 50% in 6 months. We hoped to demonstrate that use of mobile devices would improve access to patient care and educational information and to determine if use would improve efficiency and perceptions of clinical teaching. We designed a mixed-methods study involving pre- and post-implementation surveys to residents, families, and faculty as well as direct observations of family-centered rounds. We conducted rapid cycles of continual quality improvement by using the Plan-Do-Study-Act framework involving 3 interventions. Pre-intervention, the mobile computing cart was used for resident education on average 3.3 times per rounding session. After cycle 3, teaching through the use of mobile devices increased by ∼79% to 5.9 times per rounding session. On the basis of survey data, we determined there was a statistically significant increase in residents' perception of feeling prepared for rounds, receiving teaching on clinical care, and ability to teach families. Additionally, average time spent per patient on rounds decreased after implementation of mobile devices. Integration of mobile devices into a pediatric hospital medicine teaching service can facilitate patient care and perception of resident teaching by extending the utility of electronic medical records in care decisions and by improving access to knowledge resources. Copyright © 2018 by the American Academy of Pediatrics.

  17. Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

    Institute of Scientific and Technical Information of China (English)

    Ding Lili; Guo Hongxia; Chen Wei; Fan Ruyu

    2012-01-01

    Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation.There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies.To reanalyze this problem and make it beyond argument,every possible variable is considered using theoretical analysis,not just the change of electric field or oxide thickness independently.Among all possible inter-device leakage paths,parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region.Since N-well regions are commonly connected to the same power supply,these kinds of structures will not be a problem in a real CMOS integrated circuit.Generally speaking,conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.

  18. Laser Direct Writing and Selective Metallization of Metallic Circuits for Integrated Wireless Devices.

    Science.gov (United States)

    Cai, Jinguang; Lv, Chao; Watanabe, Akira

    2018-01-10

    Portable and wearable devices have attracted wide research attention due to their intimate relations with human daily life. As basic structures in the devices, the preparation of high-conductive metallic circuits or micro-circuits on flexible substrates should be facile, cost-effective, and easily integrated with other electronic units. In this work, high-conductive carbon/Ni composite structures were prepared by using a facile laser direct writing method, followed by an electroless Ni plating process, which exhibit a 3-order lower sheet resistance of less than 0.1 ohm/sq compared to original structures before plating, showing the potential for practical use. The carbon/Ni composite structures exhibited a certain flexibility and excellent anti-scratch property due to the tight deposition of Ni layers on carbon surfaces. On the basis of this approach, a wireless charging and storage device on a polyimide film was demonstrated by integrating an outer rectangle carbon/Ni composite coil for harvesting electromagnetic waves and an inner carbon micro-supercapacitor for energy storage, which can be fast charged wirelessly by a commercial wireless charger. Furthermore, a near-field communication (NFC) tag was prepared by combining a carbon/Ni composite coil for harvesting signals and a commercial IC chip for data storage, which can be used as an NFC tag for practical application.

  19. Integrating bar-code devices with computerized MC and A systems

    International Nuclear Information System (INIS)

    Anderson, L.K.; Boor, M.G.; Hurford, J.M.

    1998-01-01

    Over the past seven years, Los Alamos National Laboratory developed several generations of computerized nuclear materials control and accountability (MC and A) systems for tracking and reporting the storage, movement, and management of nuclear materials at domestic and international facilities. During the same period, Oak Ridge National Laboratory was involved with automated data acquisition (ADA) equipment, including installation of numerous bar-code scanning stations at various facilities to serve as input devices to computerized systems. Bar-code readers, as well as other ADA devices, reduce input errors, provide faster input, and allow the capture of data in remote areas where workstations do not exist. Los Alamos National Laboratory and Oak Ridge National Laboratory teamed together to implement the integration of bar-code hardware technology with computerized MC and A systems. With the expertise of both sites, the two technologies were successfully merged with little difficulty. Bar-code input is now available with several functions of the MC and A systems: material movements within material balance areas (MBAs), material movements between MBAs, and physical inventory verification. This paper describes the various components required for the integration of these MC and A systems with the installed bar-code reader devices and the future directions for these technologies

  20. Integrative Multi-Spectral Sensor Device for Far-Infrared and Visible Light Fusion

    Science.gov (United States)

    Qiao, Tiezhu; Chen, Lulu; Pang, Yusong; Yan, Gaowei

    2018-06-01

    Infrared and visible light image fusion technology is a hot spot in the research of multi-sensor fusion technology in recent years. Existing infrared and visible light fusion technologies need to register before fusion because of using two cameras. However, the application effect of the registration technology has yet to be improved. Hence, a novel integrative multi-spectral sensor device is proposed for infrared and visible light fusion, and by using the beam splitter prism, the coaxial light incident from the same lens is projected to the infrared charge coupled device (CCD) and visible light CCD, respectively. In this paper, the imaging mechanism of the proposed sensor device is studied with the process of the signals acquisition and fusion. The simulation experiment, which involves the entire process of the optic system, signal acquisition, and signal fusion, is constructed based on imaging effect model. Additionally, the quality evaluation index is adopted to analyze the simulation result. The experimental results demonstrate that the proposed sensor device is effective and feasible.

  1. Definition of information technology architectures for continuous data management and medical device integration in diabetes.

    Science.gov (United States)

    Hernando, M Elena; Pascual, Mario; Salvador, Carlos H; García-Sáez, Gema; Rodríguez-Herrero, Agustín; Martínez-Sarriegui, Iñaki; Gómez, Enrique J

    2008-09-01

    The growing availability of continuous data from medical devices in diabetes management makes it crucial to define novel information technology architectures for efficient data storage, data transmission, and data visualization. The new paradigm of care demands the sharing of information in interoperable systems as the only way to support patient care in a continuum of care scenario. The technological platforms should support all the services required by the actors involved in the care process, located in different scenarios and managing diverse information for different purposes. This article presents basic criteria for defining flexible and adaptive architectures that are capable of interoperating with external systems, and integrating medical devices and decision support tools to extract all the relevant knowledge to support diabetes care.

  2. Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration.

    Science.gov (United States)

    Bellet, Daniel; Lagrange, Mélanie; Sannicolo, Thomas; Aghazadehchors, Sara; Nguyen, Viet Huong; Langley, Daniel P; Muñoz-Rojas, David; Jiménez, Carmen; Bréchet, Yves; Nguyen, Ngoc Duy

    2017-05-24

    The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play a pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic devices, and flexible transparent thin film heaters. Currently, the most commonly used TCM for such applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness and indium scarcity. Among emerging transparent electrodes, silver nanowire (AgNW) networks appear to be a promising substitute to ITO since such electrically percolating networks exhibit excellent properties with sheet resistance lower than 10 Ω/sq and optical transparency of 90%, fulfilling the requirements of most applications. In addition, AgNW networks also exhibit very good mechanical flexibility. The fabrication of these electrodes involves low-temperature processing steps and scalable methods, thus making them appropriate for future use as low-cost transparent electrodes in flexible electronic devices. This contribution aims to briefly present the main properties of AgNW based transparent electrodes as well as some considerations relating to their efficient integration in devices. The influence of network density, nanowire sizes, and post treatments on the properties of AgNW networks will also be evaluated. In addition to a general overview of AgNW networks, we focus on two important aspects: (i) network instabilities as well as an efficient Atomic Layer Deposition (ALD) coating which clearly enhances AgNW network stability and (ii) modelling to better understand the physical properties of these networks.

  3. Organic Optical Sensor Based on Monolithic Integration of Organic Electronic Devices

    Directory of Open Access Journals (Sweden)

    Hoi Lam Tam

    2015-09-01

    Full Text Available A novel organic optical sensor that integrates a front organic light-emitting diode (OLED and an organic photodiode (OPD is demonstrated. The stripe-shaped cathode is used in the OLED components to create light signals, while the space between the stripe-shaped cathodes serves as the detection window for integrated OPD units. A MoO3 (5 nm/Ag (15 nm bi-layer inter-electrode is interposed between the vertically stacked OLED and OPD units, serving simultaneously as the cathode for the front OLED and an anode for the upper OPD units in the sensor. In the integrated sensor, the emission of the OLED units is confined by the area of the opaque stripe-shaped cathodes, optimized to maximize the reflected light passing through the window space for detection by the OPD components. This can ensure high OLED emission output, increasing the signal/noise ratio. The design and fabrication flexibility of an integrated OLED/OPD device also has low cost benefits, and is light weight and ultra-thin, making it possible for application in wearable units, finger print identification, image sensors, smart light sources, and compact information systems.

  4. A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices

    Science.gov (United States)

    AlQurashi, Ahmed; Selvakumar, C. R.

    2018-06-01

    There had been tremendous growth in the field of Integrated circuits (ICs) in the past fifty years. Scaling laws mandated both lateral and vertical dimensions to be reduced and a steady increase in doping densities. Most of the modern semiconductor devices have invariably heavily doped regions where Fermi-Dirac Integrals are required. Several attempts have been devoted to developing analytical approximations for Fermi-Dirac Integrals since numerical computations of Fermi-Dirac Integrals are difficult to use in semiconductor devices, although there are several highly accurate tabulated functions available. Most of these analytical expressions are not sufficiently suitable to be employed in semiconductor device applications due to their poor accuracy, the requirement of complicated calculations, and difficulties in differentiating and integrating. A new approximation has been developed for the Fermi-Dirac integrals of the order 1/2 by using Prony's method and discussed in this paper. The approximation is accurate enough (Mean Absolute Error (MAE) = 0.38%) and easy enough to be used in semiconductor device equations. The new approximation of Fermi-Dirac Integrals is applied to a more generalized Einstein Relation which is an important relation in semiconductor devices.

  5. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

    Science.gov (United States)

    Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

  6. Equipment concept design and development plans for microgravity science and applications research on space station: Combustion tunnel, laser diagnostic system, advanced modular furnace, integrated electronics laboratory

    Science.gov (United States)

    Uhran, M. L.; Youngblood, W. W.; Georgekutty, T.; Fiske, M. R.; Wear, W. O.

    1986-01-01

    Taking advantage of the microgravity environment of space NASA has initiated the preliminary design of a permanently manned space station that will support technological advances in process science and stimulate the development of new and improved materials having applications across the commercial spectrum. Previous studies have been performed to define from the researcher's perspective, the requirements for laboratory equipment to accommodate microgravity experiments on the space station. Functional requirements for the identified experimental apparatus and support equipment were determined. From these hardware requirements, several items were selected for concept designs and subsequent formulation of development plans. This report documents the concept designs and development plans for two items of experiment apparatus - the Combustion Tunnel and the Advanced Modular Furnace, and two items of support equipment the Laser Diagnostic System and the Integrated Electronics Laboratory. For each concept design, key technology developments were identified that are required to enable or enhance the development of the respective hardware.

  7. Helping To Integrate The Visually Challenged Into Mainstream Society Through A Low-Cost Braille Device

    Directory of Open Access Journals (Sweden)

    Desirée Jordan

    2013-06-01

    Full Text Available The visually challenged are often alienated from mainstream society because of their disabilities. This problem is even more pronounced in developing countries which often do not have the resources necessary to integrate this people group into their communities or even help them to become independent. It should therefore be the aim of governments in developing countries to provide this vulnerable people group with access to assistive technologies at a low cost. This paper describes an ongoing project that aims to provide low-cost assistive technologies to the visually challenged in Barbados. As a part of this project a study was conducted on a sample of visually challenged members of the Barbados Association for the Blind and Deaf to determine their ICT skills, knowledge of Braille and their use of assistive technologies. An analysis of the results prompted the design and creation of a low-cost Braille device prototype. The cost of this prototype was about one-half that of a commercially available device and can be used without a screen reader. This device should help create equal opportunities for the visually challenged in Barbados and other developing countries. It should also allow the visually challenged to become more independent.

  8. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo

    2013-11-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  9. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo; Catalano, Rossella; Francardi, Marco; Rondanina, Eliana; Pardeo, Francesca; De Angelis, Francesco De; Malara, Natalia Maria; Candeloro, Patrizio; Morrone, Giovanni; Di Fabrizio, Enzo M.

    2013-01-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  10. Micro/Nano Fabricated Solid-State Thermoelectric Generator Devices for Integrated High Voltage Power Sources

    Science.gov (United States)

    Fleurial, J.-P.; Ryan, M. A.; Snyder, G. J.; Huang, C.-K.; Whitacre, J. F.; Patel, J.; Lim, J.; Borshchevsky, A.

    2002-01-01

    Deep space missions have a strong need for compact, high power density, reliable and long life electrical power generation and storage under extreme temperature conditions. Except for electrochemical batteries and solar cells, there are currently no available miniaturized power sources. Conventional power generators devices become inefficient in extreme environments (such as encountered in Mars, Venus or outer planet missions) and rechargeable energy storage devices can only be operated in a narrow temperature range thereby limiting mission duration. The planned development of much smaller spacecrafts incorporating a variety of micro/nanodevices and miniature vehicles will require novel, reliable power technologies. It is also expected that such micro power sources could have a wide range of terrestrial applications, in particular when the limited lifetime and environmental limitations of batteries are key factors. Advanced solid-state thermoelectric combined with radioisotope or waste heat sources and low profile energy storage devices are ideally suited for these applications. The Jet Propulsion Laboratory has been actively pursuing the development of thermoelectric micro/nanodevices that can be fabricated using a combination of electrochemical deposition and integrated circuit processing techniques. Some of the technical challenges associated with these micro/nanodevice concepts, their expected level of performance and experimental fabrication and testing results to date are presented and discussed.

  11. Electrical Impedance Spectroscopy for Detection of Cells in Suspensions Using Microfluidic Device with Integrated Microneedles

    Directory of Open Access Journals (Sweden)

    Muhammad Asraf Mansor

    2017-02-01

    Full Text Available In this study, we introduce novel method of flow cytometry for cell detection based on impedance measurements. The state of the art method for impedance flow cytometry detection utilizes an embedded electrode in the microfluidic to perform measurement of electrical impedance of the presence of cells at the sensing area. Nonetheless, this method requires an expensive and complicated electrode fabrication process. Furthermore, reuse of the fabricated electrode also requires an intensive and tedious cleaning process. Due to that, we present a microfluidic device with integrated microneedles. The two microneedles are placed at the half height of the microchannel for cell detection and electrical measurement. A commercially-available Tungsten needle was utilized for the microneedles. The microneedles are easily removed from the disposable PDMS (Polydimethylsiloxane microchannel and can be reused with a simple cleaning process, such as washing by ultrasonic cleaning. Although this device was low cost, it preserves the core functionality of the sensor, which is capable of detecting passing cells at the sensing area. Therefore, this device is suitable for low-cost medical and food safety screening and testing process in developing countries.

  12. An in-fiber integrated optofluidic device based on an optical fiber with an inner core.

    Science.gov (United States)

    Yang, Xinghua; Yuan, Tingting; Teng, Pingping; Kong, Depeng; Liu, Chunlan; Li, Entao; Zhao, Enming; Tong, Chengguo; Yuan, Libo

    2014-06-21

    A new kind of optofluidic in-fiber integrated device based on a specially designed hollow optical fiber with an inner core is designed. The inlets and outlets are built by etching the surface of the optical fiber without damaging the inner core. A reaction region between the end of the fiber and a solid point obtained after melting is constructed. By injecting samples into the fiber, the liquids can form steady microflows and react in the region. Simultaneously, the emission from the chemiluminescence reaction can be detected from the remote end of the optical fiber through evanescent field coupling. The concentration of ascorbic acid (AA or vitamin C, Vc) is determined by the emission intensity of the reaction of Vc, H2O2, luminol, and K3Fe(CN)6 in the optical fiber. A linear sensing range of 0.1-3.0 mmol L(-1) for Vc is obtained. The emission intensity can be determined within 2 s at a total flow rate of 150 μL min(-1). Significantly, this work presents information for the in-fiber integrated optofluidic devices without spatial optical coupling.

  13. OC ToGo: bed site image integration into OpenClinica with mobile devices

    Science.gov (United States)

    Haak, Daniel; Gehlen, Johan; Jonas, Stephan; Deserno, Thomas M.

    2014-03-01

    Imaging and image-based measurements nowadays play an essential role in controlled clinical trials, but electronic data capture (EDC) systems insufficiently support integration of captured images by mobile devices (e.g. smartphones and tablets). The web application OpenClinica has established as one of the world's leading EDC systems and is used to collect, manage and store data of clinical trials in electronic case report forms (eCRFs). In this paper, we present a mobile application for instantaneous integration of images into OpenClinica directly during examination on patient's bed site. The communication between the Android application and OpenClinica is based on the simple object access protocol (SOAP) and representational state transfer (REST) web services for metadata, and secure file transfer protocol (SFTP) for image transfer, respectively. OpenClinica's web services are used to query context information (e.g. existing studies, events and subjects) and to import data into the eCRF, as well as export of eCRF metadata and structural information. A stable image transfer is ensured and progress information (e.g. remaining time) visualized to the user. The workflow is demonstrated for a European multi-center registry, where patients with calciphylaxis disease are included. Our approach improves the EDC workflow, saves time, and reduces costs. Furthermore, data privacy is enhanced, since storage of private health data on the imaging devices becomes obsolete.

  14. Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

    Science.gov (United States)

    Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

    2017-12-01

    Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

  15. Microfluidics & nanotechnology: Towards fully integrated analytical devices for the detection of cancer biomarkers

    KAUST Repository

    Perozziello, Gerardo; Candeloro, Patrizio; Gentile, Francesco T.; Nicastri, Annalisa; Perri, Angela Mena; Coluccio, Maria Laura; Adamo, A.; Pardeo, Francesca; Catalano, Rossella; Parrotta, Elvira; Espinosa, Horacio Dante; Cuda, Giovanni; Di Fabrizio, Enzo M.

    2014-01-01

    In this paper, we describe an innovative modular microfluidic platform allowing filtering, concentration and analysis of peptides from a complex mixture. The platform is composed of a microfluidic filtering device and a superhydrophobic surface integrating surface enhanced Raman scattering (SERS) sensors. The microfluidic device was used to filter specific peptides (MW 1553.73 D) derived from the BRCA1 protein, a tumor-suppressor molecule which plays a pivotal role in the development of breast cancers, from albumin (66.5 KD), the most represented protein in human plasma. The filtering process consisted of driving the complex mixture through a porous membrane having a cut-off of 12-14 kD by hydrodynamic flow. The filtered samples coming out of the microfluidic device were subsequently deposited on a superhydrophobic surface formed by micro pillars on top of which nanograins were fabricated. The nanograins coupled to a Raman spectroscopy instrument acted as a SERS sensor and allowed analysis of the filtered sample on top of the surface once it evaporated. By using the presented platform, we demonstrate being able to sort small peptides from bigger proteins and to detect them by using a label-free technique at a resolution down to 0.1 ng μL-1. The combination of microfluidics and nanotechnology to develop the presented microfluidic platform may give rise to a new generation of biosensors capable of detecting low concentration samples from complex mixtures without the need for any sample pretreatment or labelling. The developed devices could have future applications in the field of early diagnosis of severe illnesses, e.g. early cancer detection. This journal is

  16. Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications

    NARCIS (Netherlands)

    Latkowski, S.; van Veldhoven, P.J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P.J.A.; Ambrosius, H.P.M.M.; Smit, M.K.; Williams, K.A.; Bente, E.A.J.M.

    2017-01-01

    In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar,

  17. Facilitating Integration of Electron Beam Lithography Devices with Interactive Videodisc, Computer-Based Simulation and Job Aids.

    Science.gov (United States)

    Von Der Linn, Robert Christopher

    A needs assessment of the Grumman E-Beam Systems Group identified the requirement for additional skill mastery for the engineers who assemble, integrate, and maintain devices used to manufacture integrated circuits. Further analysis of the tasks involved led to the decision to develop interactive videodisc, computer-based job aids to enable…

  18. Integrated base stations and a method of transmitting data units in a communications system for mobile devices

    NARCIS (Netherlands)

    Bosch, H.G.P.; Mullender, Sape J.; Narlikar, G.J.; Samuel, L.G.; Yagati, L.N.

    2006-01-01

    Integrated base stations and a method of transmitting data units in a communications system for mobile devices. In one embodiment, an integrated base station includes a communications processor having a protocol stack configured with a media access control layer and a physical layer.

  19. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

    Science.gov (United States)

    Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

    2017-10-25

    Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

  20. Electron tunneling in proteins program.

    Science.gov (United States)

    Hagras, Muhammad A; Stuchebrukhov, Alexei A

    2016-06-05

    We developed a unique integrated software package (called Electron Tunneling in Proteins Program or ETP) which provides an environment with different capabilities such as tunneling current calculation, semi-empirical quantum mechanical calculation, and molecular modeling simulation for calculation and analysis of electron transfer reactions in proteins. ETP program is developed as a cross-platform client-server program in which all the different calculations are conducted at the server side while only the client terminal displays the resulting calculation outputs in the different supported representations. ETP program is integrated with a set of well-known computational software packages including Gaussian, BALLVIEW, Dowser, pKip, and APBS. In addition, ETP program supports various visualization methods for the tunneling calculation results that assist in a more comprehensive understanding of the tunneling process. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  1. Power and hydrogen production from ammonia in a micro-thermophotovoltaic device integrated with a micro-reformer

    International Nuclear Information System (INIS)

    Um, Dong Hyun; Kim, Tae Young; Kwon, Oh Chae

    2014-01-01

    Power and hydrogen (H 2 ) production by burning and reforming ammonia (NH 3 ) in a micro-TPV (microscale-thermophotovoltaic) device integrated with a micro-reformer is studied experimentally. A heat-recirculating micro-emitter with the cyclone and helical adapters that enhance the residence time of fed fuel-air mixtures and uniform burning burns H 2 -added NH 3 -air mixtures. A micro-reformer that converts NH 3 to H 2 using ruthenium as a catalyst surrounds the micro-emitter as a heat source. The micro-reformer is surrounded by a chamber, the inner and outer walls of which have installations of gallium antimonide photovoltaic cells and cooling fins. For the micro-reformer-integrated micro-TPV device the maximum overall efficiency of 8.1% with electrical power of 4.5 W and the maximum NH 3 conversion rate of 96.0% with the H 2 production rate of 22.6 W (based on lower heating value) are obtained, indicating that the overall efficiency is remarkably enhanced compared with 2.0% when the micro-TPV device operates alone. This supports the potential of improving the overall efficiency of a micro-TPV device through integrating it with a micro-reformer. Also, the feasibility of using NH 3 as a carbon-free fuel for both burning and reforming in practical micro power and H 2 generation devices has been demonstrated. - Highlights: • Performance of micro-TPV device integrated with micro-reformer is evaluated. • Feasibility of using NH 3 –H 2 blends in integrated system has been demonstrated. • Integration with micro-reformer improves performance of micro-TPV device. • Maximum overall efficiency of 8.1% is found compared with 2.0% without integration

  2. Spin tunneling and manipulation in nanostructures.

    Science.gov (United States)

    Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

    2012-09-01

    The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

  3. Tunnel junctions with multiferroic barriers

    Science.gov (United States)

    Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

    2007-04-01

    Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

  4. Integration of the GET electronics for the CHIMERA and FARCOS devices

    Science.gov (United States)

    De Filippo, E.; Acosta, L.; Auditore, L.; Boiano, C.; Cardella, G.; Castoldi, A.; D’Andrea, M.; De Luca, S.; Favela, F.; Fichera, F.; Giudice, N.; Gnoffo, B.; Grimaldi, A.; Guazzoni, C.; Lanzalone, G.; Librizzi, F.; Litrico, P.; Maiolino, C.; Maffesanti, S.; Martorana, NS; Pagano, A.; Pagano, EV; Papa, M.; Parsani, T.; Passaro, G.; Pirrone, S.; Politi, G.; Previdi, F.; Quattrocchi, L.; Rizzo, F.; Russotto, P.; Saccà, G.; Salemi, G.; Sciliberto, D.; Trifirò, A.; Trimarchi, M.

    2018-05-01

    A new front-end based on digital GET electronics has been adopted for the readout of the CsI(Tl) detectors of the CHIMERA 4π multi-detector and for the new modular Femtoscopy Array for Correlation and Spectroscopy (FARCOS). It is expected that the coupling of CHIMERA with the FARCOS array, featuring high angular and energy resolution, and the adoption of the new digital electronics will be well suited for improving specific future data analysis, with the full shape storage of the signals, in the field of heavy ion reactions with stable and exotic beams around the Fermi energies domain. Integration of the GET electronics with CHIMERA and FARCOS devices and with the local analog data acquisition will be briefly discussed. We present some results from previous experimental tests and from the first in-beam experiment (Hoyle-Gamma) with the coupled GET+CHIMERA data acquisition.

  5. Al transmon qubits on silicon-on-insulator for quantum device integration

    Science.gov (United States)

    Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

    2017-07-01

    We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

  6. Integrated electrochromic iris device for low power and space-limited applications

    International Nuclear Information System (INIS)

    Deutschmann, T; Oesterschulze, E

    2014-01-01

    We present a micro-electrooptical iris based on the electrochromic polymer poly(3,4-ethylenedioxythiophene). Two ring-shaped concentric polymer-segments embedded in a transparent electrochemical cell form the micro iris. The polymer layers change their absorption when an external voltage is applied. This iris device benefits from the absence of any mechanically moving part. This renders a very slim design possible, which is suited for small integrated camera systems. During operation the polymer maintains its absorbing state without power consumption. Its low driving voltage of maximum 1.5 V is beneficial for battery powered applications. The impact of the iris on the depth of focus and transmission control as well as its dynamical behavior will be addressed. (paper)

  7. Recognition tunneling

    Czech Academy of Sciences Publication Activity Database

    Lindsay, S.; He, J.; Sankey, O.; Hapala, Prokop; Jelínek, Pavel; Zhang, P.; Chang, S.; Huang, S.

    2010-01-01

    Roč. 21, č. 26 (2010), 262001/1-262001/12 ISSN 0957-4484 R&D Projects: GA ČR GA202/09/0545 Institutional research plan: CEZ:AV0Z10100521 Keywords : STM * tunneling current * molecular electronics * DFT calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010

  8. Architecture, development and implementation of a SWIR to visible integrated up-conversion imaging device

    Science.gov (United States)

    Sarusi, Gabby; Templeman, Tzvi; Hechster, Elad; Nissim, Nimrod; Vitenberg, Vladimir; Maman, Nitzan; Tal, Amir; Solodar, Assi; Makov, Guy; Abdulhalim, Ibrahim; Visoly-Fisher, Iris; Golan, Yuval

    2016-04-01

    A new concept of short wavelength infrared (SWIR) to visible upconversion integrated imaging device is proposed, modeled and some initial measured results are presented. The device is a hybrid inorganic-organic device that comprises six nano-metric scale sub-layers grown on n-type GaAs substrates. The first layer is a ~300nm thick PbSe nano-columnar absorber layer grown in (111) orientation to the substrate plan (100), with a diameter of 8- 10nm and therefore exhibit quantum confinement effects parallel to the substrate and bulk properties perpendicular to it. The advantage of this structure is the high oscillator strength and hence absorption to incoming SWIR photons while maintaining the high bulk mobility of photo-excited charges along the columns. The top of the PbSe absorber layer is coated with 20nm thick metal layer that serves as a dual sided mirror, as well as a potentially surface plasmon enhanced absorption in the PbSe nano-columns layer. The photo-excited charges (holes and electrons in opposite directions) are drifted under an external applied field to the OLED section (that is composed of a hole transport layer, an emission layer and an electron transport layer) where they recombine with injected electron from the transparent cathode and emit visible light through this cathode. Due to the high absorption and enhanced transport properties this architecture has the potential of high quantum efficiency, low cost and easy implementation in any optical system. As a bench-mark, alternative concept where InGaAs/InP heterojunction couple to liquid crystal optical spatial light modulator (OSLM) structure was built that shows a full upconversion to visible of 1550nm laser light.

  9. Automated Boundary Conditions for Wind Tunnel Simulations

    Science.gov (United States)

    Carlson, Jan-Renee

    2018-01-01

    Computational fluid dynamic (CFD) simulations of models tested in wind tunnels require a high level of fidelity and accuracy particularly for the purposes of CFD validation efforts. Considerable effort is required to ensure the proper characterization of both the physical geometry of the wind tunnel and recreating the correct flow conditions inside the wind tunnel. The typical trial-and-error effort used for determining the boundary condition values for a particular tunnel configuration are time and computer resource intensive. This paper describes a method for calculating and updating the back pressure boundary condition in wind tunnel simulations by using a proportional-integral-derivative controller. The controller methodology and equations are discussed, and simulations using the controller to set a tunnel Mach number in the NASA Langley 14- by 22-Foot Subsonic Tunnel are demonstrated.

  10. A Ubiquitous Sensor Network Platform for Integrating Smart Devices into the Semantic Sensor Web

    Science.gov (United States)

    de Vera, David Díaz Pardo; Izquierdo, Álvaro Sigüenza; Vercher, Jesús Bernat; Gómez, Luis Alfonso Hernández

    2014-01-01

    Ongoing Sensor Web developments make a growing amount of heterogeneous sensor data available to smart devices. This is generating an increasing demand for homogeneous mechanisms to access, publish and share real-world information. This paper discusses, first, an architectural solution based on Next Generation Networks: a pilot Telco Ubiquitous Sensor Network (USN) Platform that embeds several OGC® Sensor Web services. This platform has already been deployed in large scale projects. Second, the USN-Platform is extended to explore a first approach to Semantic Sensor Web principles and technologies, so that smart devices can access Sensor Web data, allowing them also to share richer (semantically interpreted) information. An experimental scenario is presented: a smart car that consumes and produces real-world information which is integrated into the Semantic Sensor Web through a Telco USN-Platform. Performance tests revealed that observation publishing times with our experimental system were well within limits compatible with the adequate operation of smart safety assistance systems in vehicles. On the other hand, response times for complex queries on large repositories may be inappropriate for rapid reaction needs. PMID:24945678

  11. Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

    International Nuclear Information System (INIS)

    García, I; Rey-Stolle, I; Algora, C

    2012-01-01

    An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

  12. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  13. Solution of the classical Yang–Baxter equation with an exotic symmetry, and integrability of a multi-species boson tunnelling model

    Energy Technology Data Exchange (ETDEWEB)

    Links, Jon, E-mail: jrl@maths.uq.edu.au

    2017-03-15

    Solutions of the classical Yang–Baxter equation provide a systematic method to construct integrable quantum systems in an algebraic manner. A Lie algebra can be associated with any solution of the classical Yang–Baxter equation, from which commuting transfer matrices may be constructed. This procedure is reviewed, specifically for solutions without skew-symmetry. A particular solution with an exotic symmetry is identified, which is not obtained as a limiting expansion of the usual Yang–Baxter equation. This solution facilitates the construction of commuting transfer matrices which will be used to establish the integrability of a multi-species boson tunnelling model. The model generalises the well-known two-site Bose–Hubbard model, to which it reduces in the one-species limit. Due to the lack of an apparent reference state, application of the algebraic Bethe Ansatz to solve the model is prohibitive. Instead, the Bethe Ansatz solution is obtained by the use of operator identities and tensor product decompositions.

  14. Resonant Tunneling Analog-To-Digital Converter

    Science.gov (United States)

    Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.

    1995-01-01

    As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

  15. Integration of gamma cameras and PET devices of multiple vendors in several locations

    International Nuclear Information System (INIS)

    Dresel, S.; Vollmar, C.; Sengupta, S.; Hahn, K.

    2002-01-01

    Full text: The Department of Nuclear Medicine of the University of Munich consists of four independently operated locations with a total of 18 gamma cameras (of three vendors), one PET scanner and one coincidence gamma camera. Recent hardware improvements, the installation and development of fast networks and new technologies for storage of large data volumes all contribute to the propagation of digital reading and reporting of nuclear medicine studies. Thus, the vision of a fully digitized nuclear medicine department becomes reality. In 1997 the department started with a strategy to fully integrate the entire number of imaging devices into one network for filmless reading, archiving and distributing nuclear medicine studies throughout the hospitals. The decision was made to use HERMES workstations (Nuclear Diagnostics, Sweden) to connect all primary imaging modalities. The purpose of the workstations located in the Nuclear Medicine departments is threefold: postprocessing, reading and archiving of all data. The workstations are networked throughout the different hospitals and are able to read the proprietary or DICOM data of the vendors of the gamma camera and PET equipment. The HERMES system is connected via DICOM interface to a long term storage device (AGFA, Germany). Additionally a JAVA (SUN Microsystems, USA) based software (JARVIS, Nuclear Diagnostics) is available to view all data from any computer using a web browser. Furthermore all data is linked to the hospital information system and selected imaging data are distributed throughout the hospitals. After commencement of full service of the network in 2000 the department is over 95 % filmfree. The high costs of purchasing hardware- and software-components are compensated for by saving costs of films and by the improvement of the work flow. Independently from these issues, filmless reporting proves to be advantageous over conventional film reading in many facts that justify to switch to a digital department

  16. Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

    Science.gov (United States)

    Fan, Wei

    To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

  17. The development of differential inductors using double air-bridge structure based on integrated passive device technology

    Science.gov (United States)

    Li, Yang; Yao, Zhao; Fu, Xiao-Qian; Li, Zhi-Ming; Shan, Fu-Kai; Wang, Cong

    2017-05-01

    Recently, integrated passive devices have become increasingly popular; inductor realization, in particular, offers interesting high performance for RF modules and systems. In this paper, a development of differential inductor fabricated by integrated passive devices technology using a double air-bridge structure is presented. A study of the model development of the differential inductor is first demonstrated. In this model section, a segment box analysis method is applied to provide a clear presentation of the differential inductor. Compared with other work that only shows a brief description of the process, the integrated passive devices process used to fabricate the inductor in this study is elaborated on. Finally, a characterization of differential inductors with different physical layout parameters is illustrated based on inductance and quality factors, which provides a valuable reference for realizing high performance. The proposed work provides a good solution for the design, fabrication and practical application of RF modules and systems.

  18. TiO2 nanowires for potential facile integration of solar cells and electrochromic devices

    International Nuclear Information System (INIS)

    Qiang, Pengfei; Chen, Zhongwei; Yang, Peihua; Liu, Pengyi; Mai, Wenjie; Cai, Xiang; Tan, Shaozao

    2013-01-01

    Self-powered systems usually consist of energy-acquisition components, energy-storage components and functional components. The development of nanoscience and nanotechnology has greatly improved the performance of all the components of self-powered systems. However, huge differences in the materials and configurations in the components cause large difficulties for integration and miniaturization of self-powered systems. Design and fabrication of different components in a self-powered system with the same or similar materials/configurations should be able to make the above goal easier. In this work, a proof-of-concept experiment involving an integrated self-powered color-changing system consisting of TiO 2 nanowire based sandwich dye-sensitized solar cells (DSSCs) and electrochromic devices (ECDs) is designed and demonstrated. When sunlight illuminates the entire system, the DSSCs generate electrical power and turn the ECD to a darker color, dimming the light; by switching the connection polarity of the DSSCs, the lighter color can be regained, implying the potential application of this self-powered color-changing system for next generation sun glasses and smart windows. (paper)

  19. Tunnel - history of

    International Nuclear Information System (INIS)

    1998-11-01

    This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.

  20. A Karaoke System with Real-Time Media Merging and Sharing Functions for a Cloud-Computing-Integrated Mobile Device

    Directory of Open Access Journals (Sweden)

    Her-Tyan Yeh

    2013-01-01

    Full Text Available Mobile devices such as personal digital assistants (PDAs, smartphones, and tablets have increased in popularity and are extremely efficient for work-related, social, and entertainment uses. Popular entertainment services have also attracted substantial attention. Thus, relevant industries have exerted considerable efforts in establishing a method by which mobile devices can be used to develop excellent and convenient entertainment services. Because cloud-computing technology is mature and possesses a strong computing processing capacity, integrating this technology into the entertainment service function in mobile devices can reduce the data load on a system and maintain mobile device performances. This study combines cloud computing with a mobile device to design a karaoke system that contains real-time media merging and sharing functions. This system enables users to download music videos (MVs from their mobile device and sing and record their singing by using the device. They can upload the recorded song to the cloud server where it is merged with real-time media. Subsequently, by employing a media streaming technology, users can store their personal MVs in their mobile device or computer and instantaneously share these videos with others on the Internet. Through this process, people can instantly watch shared videos, enjoy the leisure and entertainment effects of mobile devices, and satisfy their desire for singing.

  1. A new laryngeal mask supraglottic airway device with integrated balloon line: a descriptive and comparative bench study

    Directory of Open Access Journals (Sweden)

    Zhou YH

    2016-11-01

    Full Text Available YingHai Zhou,1 Korinne Jew2 1Research & Development, Patient Monitoring & Recovery, Medtronic Technology Center, Shanghai, People’s Republic of China; 2Medical Affairs, Minimally Invasive Therapies Group, Medtronic, Boulder, CO, USA Abstract: Laryngeal masks are invasive devices for airway management placed in the supraglottic position. The Shiley™ laryngeal mask (Shiley™ LM features an integrated inflation tube and airway shaft to facilitate product insertion and reduce the chance of tube occlusion when patients bite down. This study compared the Shiley LM to two other disposable laryngeal mask devices, the Ambu® AuraStraight™ and the LMA Unique™. Overall device design, tensile strength, flexibility of various structures, and sealing performance were measured. The Shiley LM is structurally stronger and its shaft is more resistant to compression than the other devices. The Shiley LM is generally less flexible than the other devices, but this relationship varies with device size. Sealing performance of the devices was similar in a bench assay. The results of this bench study demonstrate that the new Shiley LM resembles other commercially available laryngeal mask devices, though it exhibits greater tensile strength and lower flexibility. Keywords: laryngeal mask, supraglottic airway, supralaryngeal device

  2. Speech Enhancement of Mobile Devices Based on the Integration of a Dual Microphone Array and a Background Noise Elimination Algorithm.

    Science.gov (United States)

    Chen, Yung-Yue

    2018-05-08

    Mobile devices are often used in our daily lives for the purposes of speech and communication. The speech quality of mobile devices is always degraded due to the environmental noises surrounding mobile device users. Regretfully, an effective background noise reduction solution cannot easily be developed for this speech enhancement problem. Due to these depicted reasons, a methodology is systematically proposed to eliminate the effects of background noises for the speech communication of mobile devices. This methodology integrates a dual microphone array with a background noise elimination algorithm. The proposed background noise elimination algorithm includes a whitening process, a speech modelling method and an H ₂ estimator. Due to the adoption of the dual microphone array, a low-cost design can be obtained for the speech enhancement of mobile devices. Practical tests have proven that this proposed method is immune to random background noises, and noiseless speech can be obtained after executing this denoise process.

  3. Speech Enhancement of Mobile Devices Based on the Integration of a Dual Microphone Array and a Background Noise Elimination Algorithm

    Directory of Open Access Journals (Sweden)

    Yung-Yue Chen

    2018-05-01

    Full Text Available Mobile devices are often used in our daily lives for the purposes of speech and communication. The speech quality of mobile devices is always degraded due to the environmental noises surrounding mobile device users. Regretfully, an effective background noise reduction solution cannot easily be developed for this speech enhancement problem. Due to these depicted reasons, a methodology is systematically proposed to eliminate the effects of background noises for the speech communication of mobile devices. This methodology integrates a dual microphone array with a background noise elimination algorithm. The proposed background noise elimination algorithm includes a whitening process, a speech modelling method and an H2 estimator. Due to the adoption of the dual microphone array, a low-cost design can be obtained for the speech enhancement of mobile devices. Practical tests have proven that this proposed method is immune to random background noises, and noiseless speech can be obtained after executing this denoise process.

  4. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

    OpenAIRE

    Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-01-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc.,...

  5. A Study of Vertical Transport through Graphene toward Control of Quantum Tunneling.

    Science.gov (United States)

    Zhu, Xiaodan; Lei, Sidong; Tsai, Shin-Hung; Zhang, Xiang; Liu, Jun; Yin, Gen; Tang, Min; Torres, Carlos M; Navabi, Aryan; Jin, Zehua; Tsai, Shiao-Po; Qasem, Hussam; Wang, Yong; Vajtai, Robert; Lake, Roger K; Ajayan, Pulickel M; Wang, Kang L

    2018-02-14

    Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

  6. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  7. Tunnel boring machine applications

    International Nuclear Information System (INIS)

    Bhattacharyya, K.K.; McDonald, R.; Saunders, R.S.

    1992-01-01

    This paper reports that characterization of Yucca Mountain for a potential repository requires construction of an underground Exploratory Studies Facility (ESF). Mechanical excavating methods have been proposed for construction of the ESF as they offer a number of advantages over drilling and blasting at the Yucca Mountain site, including; less ground disturbance and therefore a potential for less adverse effects on the integrity of the site, creation of a more stable excavation cross section requiring less ground support, and an inherently safer and cleaner working environment. The tunnel boring machine (TBM) provides a proven technology for excavating the welded and unwelded Yucca Mountain tuffs. The access ramps and main underground tunnels form the largest part of the ESF underground construction work, and have been designed for excavation by TBM

  8. Spin tunnelling in mesoscopic systems

    Science.gov (United States)

    Garg, Anupam

    2001-02-01

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the space of magnetic fields, known as diabolical points. This phenomena is explained in terms of two approaches, one based on spin-coherent-state path integrals, and the other on a generalization of the phase integral (or WKB) method to difference equations. Explicit formulas for the diabolical points are obtained for a model Hamiltonian.

  9. Inelastic scattering in resonant tunneling

    DEFF Research Database (Denmark)

    Wingreen, Ned S.; Jacobsen, Karsten Wedel; Wilkins, John W.

    1989-01-01

    The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability or the esc......The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability...

  10. Optically induced dielectropheresis sorting with automated medium exchange in an integrated optofluidic device resulting in higher cell viability.

    Science.gov (United States)

    Lee, Gwo-Bin; Wu, Huan-Chun; Yang, Po-Fu; Mai, John D

    2014-08-07

    We demonstrated the integration of a microfluidic device with an optically induced dielectrophoresis (ODEP) device such that the critical medium replacement process was performed automatically and the cells could be subsequently manipulated by using digitally projected optical images. ODEP has been demonstrated to generate sufficient forces for manipulating particles/cells by projecting a light pattern onto photoconductive materials which creates virtual electrodes. The production of the ODEP force usually requires a medium that has a suitable electrical conductivity and an appropriate dielectric constant. Therefore, a 0.2 M sucrose solution is commonly used. However, this requires a complicated medium replacement process before one is able to manipulate cells. Furthermore, the 0.2 M sucrose solution is not suitable for the long-term viability of cells. In comparison to conventional manual processes, our automated medium replacement process only took 25 minutes. Experimental data showed that there was up to a 96.2% recovery rate for the manipulated cells. More importantly, the survival rate of the cells was greatly enhanced due to this faster automated process. This newly developed microfluidic chip provided a promising platform for the rapid replacement of the cell medium and this was also the first time that an ODEP device was integrated with other active flow control components in a microfluidic device. By improving cell viability after cell manipulation, this design may contribute to the practical integration of ODEP modules into other lab-on-a-chip devices and biomedical applications in the future.

  11. Fabrication technology for lead-alloy Josephson devices for high-density integrated circuits

    International Nuclear Information System (INIS)

    Imamura, T.; Hoko, H.; Tamura, H.; Yoshida, A.; Suzuki, H.; Morohashi, S.; Ohara, S.; Hasuo, S.; Yamaoka, T.

    1986-01-01

    Fabrication technology for lead-alloy Josephson devices was evaluated from the viewpoint of application to large-scale integrated circuits. Metal and insulating layers used in the circuits were evaluated, and optimization of techniques for deposition or formation of these layers was investigated. Metallization of the Pb-In-Au base electrode and the Pb-Bi counterelectrode was studied in terms of optimizing the deposited films, to improve the reliability of junction electrodes. The formation of the oxide barrier was studied by in situ ellipsometry. SiO/sub x/ deposited in oxygen was developed as the insulation layer with less defect density than conventional SiO. A liftoff technique using toluene soaking was developed, and patterns with a minimum line width of 2 μm were consistently reproduced. The characteristics of each element in the circuits were evaluated for test vehicles. For the junction, the following items were evaluated: controllability of the critical current I/sub c/, junction quality, I/sub c/ uniformity, junction yield, and thermal cycling and storage stability. For the peripheral elements, integrity of lines and contacts, and characteristics of resistors were evaluated. 8-kbit memory cell arrays with a full vertical structure were fabricated to evaluate these technologies in combination. The continuity of each metal layer and insulation between metal layers were evaluated with an autoprober at room temperature. For selected chips, cell characteristics have been measured, and their I/sub c/ uniformity and production yields for cells are discussed. Normal operation of the memory cells was confirmed for all of the 24 accessible cells on a chip

  12. Integrated methods and scenario development for urban groundwater management and protection during tunnel road construction: a case study of urban hydrogeology in the city of Basel, Switzerland

    Science.gov (United States)

    Epting, J.; Huggenberger, P.; Rauber, M.

    2008-05-01

    In the northwestern area of Basel, Switzerland, a tunnel highway connects the French highway A35 (Mulhouse Basel) with the Swiss A2 (Basel Gotthard Milano). The subsurface highway construction was associated with significant impacts on the urban groundwater system. Parts of this area were formerly contaminated by industrial wastes, and groundwater resources are extensively used by industry. During some construction phases, considerable groundwater drawdown was necessary, leading to major changes in the groundwater flow regime. Sufficient groundwater supply for industrial users and possible groundwater pollution due to interactions with contaminated areas had to be taken into account. A groundwater management system is presented, comprising extensive groundwater monitoring, high-resolution numerical groundwater modeling, and the development and evaluation of different scenarios. This integrated approach facilitated the evaluation of the sum of impacts, and their interaction in time and space with changing hydrological boundary conditions. For all project phases, changes of the groundwater system had to be evaluated in terms of the various goals and requirements. Although the results of this study are case-specific, the overall conceptual approach and methodologies applied may be directly transferred to other urban areas.

  13. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

  14. Automated microfluidic devices integrating solid-phase extraction, fluorescent labeling, and microchip electrophoresis for preterm birth biomarker analysis.

    Science.gov (United States)

    Sahore, Vishal; Sonker, Mukul; Nielsen, Anna V; Knob, Radim; Kumar, Suresh; Woolley, Adam T

    2018-01-01

    We have developed multichannel integrated microfluidic devices for automated preconcentration, labeling, purification, and separation of preterm birth (PTB) biomarkers. We fabricated multilayer poly(dimethylsiloxane)-cyclic olefin copolymer (PDMS-COC) devices that perform solid-phase extraction (SPE) and microchip electrophoresis (μCE) for automated PTB biomarker analysis. The PDMS control layer had a peristaltic pump and pneumatic valves for flow control, while the PDMS fluidic layer had five input reservoirs connected to microchannels and a μCE system. The COC layers had a reversed-phase octyl methacrylate porous polymer monolith for SPE and fluorescent labeling of PTB biomarkers. We determined μCE conditions for two PTB biomarkers, ferritin (Fer) and corticotropin-releasing factor (CRF). We used these integrated microfluidic devices to preconcentrate and purify off-chip-labeled Fer and CRF in an automated fashion. Finally, we performed a fully automated on-chip analysis of unlabeled PTB biomarkers, involving SPE, labeling, and μCE separation with 1 h total analysis time. These integrated systems have strong potential to be combined with upstream immunoaffinity extraction, offering a compact sample-to-answer biomarker analysis platform. Graphical abstract Pressure-actuated integrated microfluidic devices have been developed for automated solid-phase extraction, fluorescent labeling, and microchip electrophoresis of preterm birth biomarkers.

  15. Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates

    Science.gov (United States)

    2018-01-01

    TECHNICAL REPORT 3086 January 2018 Nanofabrication Technology for Production of Quantum Nano-electronic Devices Integrating Niobium Electrodes...work described in this report was performed for the by the Advanced Concepts and Applied Research Branch (Code 71730) and the Science and Technology ...Applied Sciences Division iii EXECUTIVE SUMMARY This technical report demonstrates nanofabrication technology for Niobium heterostructures and

  16. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  17. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

    Science.gov (United States)

    Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

    2016-03-01

    Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

  18. Integrated Endurance and Resistance Exercise Countermeasures Using a Gravity Independent Training Device

    Data.gov (United States)

    National Aeronautics and Space Administration — This study is designed to investigate the effectiveness of a new exercise device, multi-mode exercise device or M-MED, for use during long-duration space flights for...

  19. 78 FR 16533 - Certain Integrated Circuit Devices and Products Containing the Same; Institution of Investigation...

    Science.gov (United States)

    2013-03-15

    ...Notice is hereby given that a complaint was filed with the U.S. International Trade Commission on February 8, 2013, under section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. 1337, on behalf of Tela Innovations, Inc. of Los Gatos, California. A letter supplementing the complaint was filed on February 28, 2013. The complaint alleges violations of section 337 based upon the importation into the United States, the sale for importation, and/or the sale within the United States after importation of certain integrated circuit devices and products containing the same by reason of infringement of certain claims of U.S. Patent Nos. 8,264,049 (``the '049 patent''); U.S. Patent No. 8,264,044 (``the '044 patent''); U.S. Patent No. 8,258,550 (``the '550 patent''); U.S. Patent No. 8,258,547 (``the '547 patent''); U.S. Patent No. 8,217,428 (``the '428 patent''); U.S. Patent No. 8,258,552 (``the '552 patent''); and U.S. Patent No. 8,030,689 (``the '689 patent''). The complaint further alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The complainant requests that the Commission institute an investigation and, after the investigation, issue an exclusion order and cease and desist orders.

  20. An image compression method for space multispectral time delay and integration charge coupled device camera

    International Nuclear Information System (INIS)

    Li Jin; Jin Long-Xu; Zhang Ran-Feng

    2013-01-01

    Multispectral time delay and integration charge coupled device (TDICCD) image compression requires a low-complexity encoder because it is usually completed on board where the energy and memory are limited. The Consultative Committee for Space Data Systems (CCSDS) has proposed an image data compression (CCSDS-IDC) algorithm which is so far most widely implemented in hardware. However, it cannot reduce spectral redundancy in multispectral images. In this paper, we propose a low-complexity improved CCSDS-IDC (ICCSDS-IDC)-based distributed source coding (DSC) scheme for multispectral TDICCD image consisting of a few bands. Our scheme is based on an ICCSDS-IDC approach that uses a bit plane extractor to parse the differences in the original image and its wavelet transformed coefficient. The output of bit plane extractor will be encoded by a first order entropy coder. Low-density parity-check-based Slepian—Wolf (SW) coder is adopted to implement the DSC strategy. Experimental results on space multispectral TDICCD images show that the proposed scheme significantly outperforms the CCSDS-IDC-based coder in each band

  1. Rapid, Sensitive, and Reusable Detection of Glucose by a Robust Radiofrequency Integrated Passive Device Biosensor Chip

    Science.gov (United States)

    Kim, Nam-Young; Adhikari, Kishor Kumar; Dhakal, Rajendra; Chuluunbaatar, Zorigt; Wang, Cong; Kim, Eun-Soo

    2015-01-01

    Tremendous demands for sensitive and reliable label-free biosensors have stimulated intensive research into developing miniaturized radiofrequency resonators for a wide range of biomedical applications. Here, we report the development of a robust, reusable radiofrequency resonator based integrated passive device biosensor chip fabricated on a gallium arsenide substrate for the detection of glucose in water-glucose solutions and sera. As a result of the highly concentrated electromagnetic energy between the two divisions of an intertwined spiral inductor coupled with an interdigital capacitor, the proposed glucose biosensor chip exhibits linear detection ranges with high sensitivity at center frequency. This biosensor, which has a sensitivity of up to 199 MHz/mgmL−1 and a short response time of less than 2 sec, exhibited an ultralow detection limit of 0.033 μM and a reproducibility of 0.61% relative standard deviation. In addition, the quantities derived from the measured S-parameters, such as the propagation constant (γ), impedance (Z), resistance (R), inductance (L), conductance (G) and capacitance (C), enabled the effective multi-dimensional detection of glucose. PMID:25588958

  2. Tunneling with dissipation in open quantum systems

    International Nuclear Information System (INIS)

    Adamyan, G.G.; Antonenko, N.V.; Scheid, W.

    1997-01-01

    Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The tunneling in the open quantum systems strongly depends on the coupling with environment. We found the cases when the dissipation prohibits tunneling through the barrier but decreases the crossing of the barrier for the energies above the barrier. As a particular application, the case of decay from the metastable state is considered

  3. Charge qubit coupled to an intense microwave electromagnetic field in a superconducting Nb device: evidence for photon-assisted quasiparticle tunneling.

    Science.gov (United States)

    de Graaf, S E; Leppäkangas, J; Adamyan, A; Danilov, A V; Lindström, T; Fogelström, M; Bauch, T; Johansson, G; Kubatkin, S E

    2013-09-27

    We study a superconducting charge qubit coupled to an intensive electromagnetic field and probe changes in the resonance frequency of the formed dressed states. At large driving strengths, exceeding the qubit energy-level splitting, this reveals the well known Landau-Zener-Stückelberg interference structure of a longitudinally driven two-level system. For even stronger drives, we observe a significant change in the Landau-Zener-Stückelberg pattern and contrast. We attribute this to photon-assisted quasiparticle tunneling in the qubit. This results in the recovery of the qubit parity, eliminating effects of quasiparticle poisoning, and leads to an enhanced interferometric response. The interference pattern becomes robust to quasiparticle poisoning and has a good potential for accurate charge sensing.

  4. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

  5. Effects of Thermal Resistance on One-Dimensional Thermal Analysis of the Epidermal Flexible Electronic Devices Integrated with Human Skin

    Science.gov (United States)

    Li, He; Cui, Yun

    2017-12-01

    Nowadays, flexible electronic devices are increasingly used in direct contact with human skin to monitor the real-time health of human body. Based on the Fourier heat conduction equation and Pennes bio-heat transfer equation, this paper deduces the analytical solutions of one - dimensional heat transfer for flexible electronic devices integrated with human skin under the condition of a constant power. The influence of contact thermal resistance between devices and skin is considered as well. The corresponding finite element model is established to verify the correctness of analytical solutions. The results show that the finite element analysis agrees well with the analytical solution. With bigger thermal resistance, temperature increase of skin surface will decrease. This result can provide guidance for the design of flexible electronic devices to reduce the negative impact that exceeding temperature leave on human skin.

  6. An analysis of structure strength and ergonomic value of mechanical systems of integrated kidney and thyroid diagnosis device

    International Nuclear Information System (INIS)

    M-Awwaluddin Tri Hardjanto; Abdul Jalil

    2016-01-01

    The has been performed to ensure the security of the device, understand the patient's as well as operator problem and complaints, as part of the efforts to improve the performance of these devices. The analysis is done by calculating the strength of arm, the main frame chairs, and frame backrest patients, as well as analyzing the static anthropometry data for Indonesian man to determine the size of the dental chair and adjusting the size of the seat. We also use the dynamic anthropometry data for Indonesian man to determine the layout and range of movement of the operator while operating the integrated device The analysis showed that the structure is safe because the actual stress that occurs is still below the limit value of 248 MPa. The device also has good ergonomic value so that it can be bulk produced. (author)

  7. Small-size low-temperature scanning tunnel microscope

    International Nuclear Information System (INIS)

    Al'tfeder, I.B.; Khajkin, M.S.

    1989-01-01

    A small-size scanning tunnel microscope, designed for operation in transport helium-filled Dewar flasks is described. The microscope design contains a device moving the pin to the tested sample surface and a piezoelectric fine positioning device. High vibration protection of the microscope is provided by its suspension using silk threads. The small-size scanning tunnel microscope provides for atomic resolution

  8. Crystal growth of hexaferrite architecture for magnetoelectrically tunable microwave semiconductor integrated devices

    Science.gov (United States)

    Hu, Bolin

    Hexaferrites (i.e., hexagonal ferrites), discovered in 1950s, exist as any one of six crystallographic structural variants (i.e., M-, X-, Y-, W-, U-, and Z-type). Over the past six decades, the hexaferrites have received much attention owing to their important properties that lend use as permanent magnets, magnetic data storage materials, as well as components in electrical devices, particularly those operating at RF frequencies. Moreover, there has been increasing interest in hexaferrites for new fundamental and emerging applications. Among those, electronic components for mobile and wireless communications especially incorporated with semiconductor integrated circuits at microwave frequencies, electromagnetic wave absorbers for electromagnetic compatibility, random-access memory (RAM) and low observable technology, and as composite materials having low dimensions. However, of particular interest is the magnetoelectric (ME) effect discovered recently in the hexaferrites such as SrScxFe12-xO19 (SrScM), Ba2--xSrxZn 2Fe12O22 (Zn2Y), Sr4Co2Fe 36O60 (Co2U) and Sr3Co2Fe 24O41 (Co2Z), demonstrating ferroelectricity induced by the complex internal alignment of magnetic moments. Further, both Co 2Z and Co2U have revealed observable magnetoelectric effects at room temperature, representing a step toward practical applications using the ME effect. These materials hold great potential for applications, since strong magnetoelectric coupling allows switching of the FE polarization with a magnetic field (H) and vice versa. These features could lead to a new type of storage devices, such as an electric field-controlled magnetic memory. A nanoscale-driven crystal growth of magnetic hexaferrites was successfully demonstrated at low growth temperatures (25--40% lower than the temperatures required often for crystal growth). This outcome exhibits thermodynamic processes of crystal growth, allowing ease in fabrication of advanced multifunctional materials. Most importantly, the

  9. Chaos regularization of quantum tunneling rates

    International Nuclear Information System (INIS)

    Pecora, Louis M.; Wu Dongho; Lee, Hoshik; Antonsen, Thomas; Lee, Ming-Jer; Ott, Edward

    2011-01-01

    Quantum tunneling rates through a barrier separating two-dimensional, symmetric, double-well potentials are shown to depend on the classical dynamics of the billiard trajectories in each well and, hence, on the shape of the wells. For shapes that lead to regular (integrable) classical dynamics the tunneling rates fluctuate greatly with eigenenergies of the states sometimes by over two orders of magnitude. Contrarily, shapes that lead to completely chaotic trajectories lead to tunneling rates whose fluctuations are greatly reduced, a phenomenon we call regularization of tunneling rates. We show that a random-plane-wave theory of tunneling accounts for the mean tunneling rates and the small fluctuation variances for the chaotic systems.

  10. Fiber coupled ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    We report on a scanning tunneling microscope with a photoconductive gate in the tunneling current circuit. The tunneling tip is attached to a coplanar transmission line with an integrated photoconductive switch. The switch is illuminated through a fiber which is rigidly attached to the switch...... waveguide. The measurements show that the probe works as a transient voltage detector in contact and a capacitively coupled transient field detector in tunneling mode. We do not measure the transient voltage change in the ohmic tunneling current. In this sense, the spatial resolution for propagating...... substrate. By using a firmly attached fiber we achieve an excellent reproducibility and unconstrained positioning of the tip. We observe a transient signal with 2.9 ps pulse width in tunneling mode and 5 ps in contact mode. The instrument is applied to investigating the mode structure on a coplanar...

  11. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  12. Homoepitaxial graphene tunnel barriers for spin transport

    Science.gov (United States)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  13. Tunneling technologies for the collider ring tunnels

    International Nuclear Information System (INIS)

    Frobenius, P.

    1989-01-01

    The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs

  14. Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.

    Science.gov (United States)

    Joiner, Corey A; Campbell, Philip M; Tarasov, Alexey A; Beatty, Brian R; Perini, Chris J; Tsai, Meng-Yen; Ready, William J; Vogel, Eric M

    2016-04-06

    Tunneling devices based on vertical heterostructures of graphene and other 2D materials can overcome the low on-off ratios typically observed in planar graphene field-effect transistors. This study addresses the impact of processing conditions on two-dimensional materials in a fully integrated heterostructure device fabrication process. In this paper, graphene-molybdenum disulfide-graphene tunneling heterostructures were fabricated using only large-area synthesized materials, unlike previous studies that used small exfoliated flakes. The MoS2 tunneling barrier is either synthesized on a sacrificial substrate and transferred to the bottom-layer graphene or synthesized directly on CVD graphene. The presence of graphene was shown to have no impact on the quality of the grown MoS2. The thickness uniformity of MoS2 grown on graphene and SiO2 was found to be 1.8 ± 0.22 nm. XPS and Raman spectroscopy are used to show how the MoS2 synthesis process introduces defects into the graphene structure by incorporating sulfur into the graphene. The incorporation of sulfur was shown to be greatly reduced in the absence of molybdenum suggesting molybdenum acts as a catalyst for sulfur incorporation. Tunneling simulations based on the Bardeen transfer Hamiltonian were performed and compared to the experimental tunneling results. The simulations show the use of MoS2 as a tunneling barrier suppresses contributions to the tunneling current from the conduction band. This is a result of the observed reduction of electron conduction within the graphene sheets.

  15. Fabrication and characterization of an integrated ionic device from suspended polypyrrole and alamethicin-reconstituted lipid bilayer membranes

    International Nuclear Information System (INIS)

    Northcutt, Robert; Sundaresan, Vishnu-Baba

    2012-01-01

    Conducting polymers are electroactive materials that undergo conformal relaxation of the polymer backbone in the presence of an electrical field through ion exchange with solid or aqueous electrolytes. This conformal relaxation and the associated morphological changes make conducting polymers highly suitable for actuation and sensing applications. Among smart materials, bioderived active materials also use ion transport for sensing and actuation functions via selective ion transport. The transporter proteins extracted from biological cell membranes and reconstituted into a bilayer lipid membrane in bioderived active materials regulate ion transport for engineering functions. The protein transporter reconstituted in the bilayer lipid membrane is referred to as the bioderived membrane and serves as the active component in bioderived active materials. Inspired by the similarities in the physics of transduction in conducting polymers and bioderived active materials, an integrated ionic device is formed from the bioderived membrane and the conducting polymer membrane. This ionic device is fabricated into a laminated thin-film membrane and a common ion that can be processed by the bioderived and the conducting polymer membranes couple the ionic function of these two membranes. An integrated ionic device, fabricated from polypyrrole (PPy) doped with sodium dodecylbenzenesulfonate (NaDBS) and an alamethicin-reconstituted DPhPC bilayer lipid membrane, is presented in this paper. A voltage-gated sodium current regulates the electrochemical response in the PPy(DBS) layer. The integrated device is fabricated on silicon-based substrates through microfabrication, electropolymerization, and vesicle fusion, and ionic activity is characterized through electrochemical measurements. (paper)

  16. Use of mobile devices in nursing student-nurse teacher cooperation during the clinical practicum: an integrative review.

    Science.gov (United States)

    Strandell-Laine, Camilla; Stolt, Minna; Leino-Kilpi, Helena; Saarikoski, Mikko

    2015-03-01

    To identify and appraise study findings on the use of mobile devices, in particular for what purposes and how, in nursing student-nurse teacher cooperation during the clinical practicum. A systematic literature search was conducted using the PubMed/Medline, CINAHL, PsycINFO and ERIC for primary empirical studies published in English. An integrative literature review was undertaken. Quality appraisal of the included studies was conducted using design-specific standardized checklists. Studies were thematically analyzed. Based on the inclusion and exclusion criteria, eleven studies were included in the review. Weaknesses in designs, samples, questionnaires and results, compromised comparison and/or generalization of the findings of the studies. Three main themes were identified: (1) features of mobile devices (2) utility of mobile devices and (3) barriers to the use of mobile devices. Problems of connectivity were the main challenges reported in the use of mobile devices. Participants used mobile devices primarily as reference tools, but less frequently as tools for reflection, assessment or cooperation during the clinical practicum. Interest in mobile device use during the clinical practicum was reported, but training and ongoing support are needed. As only a small number of eligible primary empirical studies were found, it is not possible to draw firm conclusions on the results. In the future, rigorous primary empirical studies are needed to explore the potential of mobile devices in providing a supplementary pedagogical method in nursing student-nurse teacher cooperation during the clinical practicum. Robust study designs, including experimental ones, are clearly needed to assess the effectiveness of mobile devices in nursing student-nurse teacher cooperation during the clinical practicum. Copyright © 2014 Elsevier Ltd. All rights reserved.

  17. An integrated lithography concept with application on 45-nm ½ pitch flash memory devices

    Science.gov (United States)

    Dusa, Mircea; Engelen, Andre; Finders, Jo

    2006-03-01

    It is well accepted to judge imaging capability of an exposure tool primarily on printing equal line-spaces, at a minimum ½ pitch. Further on, combining line-space minimum ½ pitches with scanner maximum NA, defines the process k I. From a lithographer viewpoint, flash memory device is the perfect candidate to achieve lowest k I lithography for a given NA. This is justified by flash layout specific, with regular and relative simple 1-D topology of the critical layers that look like line-space gratings. In reality, flash layout presents a subtle topology and cannot be considered a simple 1-D line-space problem. Uniqueness to flash layout is the array-end zones, where pattern regularity is broken up by features with dimensions and separation of n x ½ pitch, where n is an integer number that we used in this work to manipulate litho process latitudes. Integrated lithography concept seeks to tweak flash pattern details and tune it with scanner control parameters. We introduce feature-center placement through focus and dose as the metric to characterize a cross-coupling phenomena occurring between adjacent features located at array-end of typical flash poly wordline layer. We comparedthe metric behavior with usual litho process window parameters and identified interactions with scanner CDU control parameters. We show how feature-center placement errors are direct functions of optical and physical characteristics of mask materials, attenuated PSM or binary, and of layout array-end topology. Imaging at extreme low-k I, effects from layout specifics and mask materials are best characterized by full vector, rigorous EM simulation, instead of scalar approach, typically used for OPC treatment. Predicted CDU performance of 1.2NA scanner, based on integrated lithography concept, matched very well the experimental results in printing 45nm ½ pitch flash wordline layer. Results show that 1.2NA scanner, operating at 0.28 k I could be an effective lithography solution for 45nm

  18. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    Directory of Open Access Journals (Sweden)

    Weisheng Zhao

    2016-01-01

    Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  19. Femtosecond Laser Direct Write Integration of Multi-Protein Patterns and 3D Microstructures into 3D Glass Microfluidic Devices

    Directory of Open Access Journals (Sweden)

    Daniela Serien

    2018-01-01

    Full Text Available Microfluidic devices and biochips offer miniaturized laboratories for the separation, reaction, and analysis of biochemical materials with high sensitivity and low reagent consumption. The integration of functional or biomimetic elements further functionalizes microfluidic devices for more complex biological studies. The recently proposed ship-in-a-bottle integration based on laser direct writing allows the construction of microcomponents made of photosensitive polymer inside closed microfluidic structures. Here, we expand this technology to integrate proteinaceous two-dimensional (2D and three-dimensional (3D microstructures with the aid of photo-induced cross-linking into glass microchannels. The concept is demonstrated with bovine serum albumin and enhanced green fluorescent protein, each mixed with photoinitiator (Sodium 4-[2-(4-Morpholino benzoyl-2-dimethylamino] butylbenzenesulfonate. Unlike the polymer integration, fabrication over the entire channel cross-section is challenging. Two proteins are integrated into the same channel to demonstrate multi-protein patterning. Using 50% w/w glycerol solvent instead of 100% water achieves almost the same fabrication resolution for in-channel fabrication as on-surface fabrication due to the improved refractive index matching, enabling the fabrication of 3D microstructures. A glycerol-water solvent also reduces the risk of drying samples. We believe this technology can integrate diverse proteins to contribute to the versatility of microfluidics.

  20. The Integration of a Structural Water Gas Shift Catalyst with a Vanadium Alloy Hydrogen Transport Device

    Energy Technology Data Exchange (ETDEWEB)

    Barton, Thomas; Argyle, Morris; Popa, Tiberiu

    2009-06-30

    This project is in response to a requirement for a system that combines water gas shift technology with separation technology for coal derived synthesis gas. The justification of such a system would be improved efficiency for the overall hydrogen production. By removing hydrogen from the synthesis gas stream, the water gas shift equilibrium would force more carbon monoxide to carbon dioxide and maximize the total hydrogen produced. Additional benefit would derive from the reduction in capital cost of plant by the removal of one step in the process by integrating water gas shift with the membrane separation device. The answer turns out to be that the integration of hydrogen separation and water gas shift catalysis is possible and desirable. There are no significant roadblocks to that combination of technologies. The problem becomes one of design and selection of materials to optimize, or at least maximize performance of the two integrated steps. A goal of the project was to investigate the effects of alloying elements on the performance of vanadium membranes with respect to hydrogen flux and fabricability. Vanadium was chosen as a compromise between performance and cost. It is clear that the vanadium alloys for this application can be produced, but the approach is not simple and the results inconsistent. For any future contracts, large single batches of alloy would be obtained and rolled with larger facilities to produce the most consistent thin foils possible. Brazing was identified as a very likely choice for sealing the membranes to structural components. As alloying was beneficial to hydrogen transport, it became important to identify where those alloying elements might be detrimental to brazing. Cataloging positive and negative alloying effects was a significant portion of the initial project work on vanadium alloying. A water gas shift catalyst with ceramic like structural characteristics was the second large goal of the project. Alumina was added as a

  1. Scanning Tunneling Optical Resonance Microscopy

    Science.gov (United States)

    Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

    2003-01-01

    Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically tunneling current

  2. Development of a real-world direct interface for integrated DNA extraction and amplification in a microfluidic device.

    Science.gov (United States)

    Shaw, Kirsty J; Joyce, Domino A; Docker, Peter T; Dyer, Charlotte E; Greenway, Gillian M; Greenman, John; Haswell, Stephen J

    2011-02-07

    Integrated DNA extraction and amplification have been carried out in a microfluidic device using electro-osmotic pumping (EOP) for fluidic control. All the necessary reagents for performing both DNA extraction and polymerase chain reaction (PCR) amplification were pre-loaded into the microfluidic device following encapsulation in agarose gel. Buccal cells were collected using OmniSwabs [Whatman™, UK] and manually added to a chaotropic binding/lysis solution pre-loaded into the microfluidic device. The released DNA was then adsorbed onto a silica monolith contained within the DNA extraction chamber and the microfluidic device sealed using polymer electrodes. The washing and elution steps for DNA extraction were carried out using EOP, resulting in transfer of the eluted DNA into the PCR chamber. Thermal cycling, achieved using a Peltier element, resulted in amplification of the Amelogenin locus as confirmed using conventional capillary gel electrophoresis. It was demonstrated that the PCR reagents could be stored in the microfluidic device for at least 8 weeks at 4 °C with no significant loss of activity. Such methodology lends itself to the production of 'ready-to-use' microfluidic devices containing all the necessary reagents for sample processing, with many obvious applications in forensics and clinical medicine.

  3. Exploration of the affordances of mobile devices in integrating theory and clinical practice in an undergraduate nursing programme.

    Science.gov (United States)

    Willemse, Juliana J; Bozalek, Vivienne

    2015-01-01

    Promoting the quality and effectiveness of nursing education is an important factor, given the increased demand for nursing professionals. It is important to establish learning environments that provide personalised guidance and feedback to students about their practical skills and application of their theoretical knowledge. To explore and describe the knowledge and points of view of students and educators about introduction of new technologies into an undergraduate nursing programme. The qualitative design used Tesch's (1990) steps of descriptive data analysis to complete thematic analysis of the data collected in focus group discussions (FGDs) and individual interviews to identify themes. Themes identified from the students’ FGDs and individual interviews included: mobile devices as a communication tool; email, WhatsApp and Facebook as methods of communication; WhatsApp as a method of communication; nurses as role-models in the clinical setting; setting personal boundaries; and impact of mobile devices in clinical practice on professionalism. Themes identified from the FGD, individual interviews and a discussion session held with educators included: peer learning via mobile devices; email, WhatsApp and Facebook as methods of communication; the mobile device as a positive learning method; students need practical guidance; and ethical concerns in clinical facilities about Internet access and use of mobile devices. The research project established an understanding of the knowledge and points of view of students and educators regarding introduction of new technologies into an undergraduate nursing programme with the aim of enhancing integration of theory and clinical practice through use of mobile devices.

  4. The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors

    Science.gov (United States)

    Sant, S.; Schenk, A.

    2017-10-01

    It is demonstrated how band tail states in the semiconductor influence the performance of a Tunnel Field Effect Transistor (TFET). As a consequence of the smoothened density of states (DOS) around the band edges, the energetic overlap of conduction and valence band states occurs gradually at the onset of band-to-band tunneling (BTBT), thus degrading the sub-threshold swing (SS) of the TFET. The effect of the band tail states on the current-voltage characteristics is modelled quantum-mechanically based on the idea of zero-phonon trap-assisted tunneling between band and tail states. The latter are assumed to arise from a 3-dimensional pseudo-delta potential proposed by Vinogradov [1]. This model potential allows the derivation of analytical expressions for the generation rate covering the whole range from very strong to very weak localization of the tail states. Comparison with direct BTBT in the one-band effective mass approximation reveals the essential features of tail-to-band tunneling. Furthermore, an analytical solution for the problem of tunneling from continuum states of the disturbed DOS to states in the opposite band is found, and the differences to direct BTBT are worked out. Based on the analytical expressions, a semi-classical model is implemented in a commercial device simulator which involves numerical integration along the tunnel paths. The impact of the tail states on the device performance is analyzed for a nanowire Gate-All-Around TFET. The simulations show that tail states notably impact the transfer characteristics of a TFET. It is found that exponentially decaying band tails result in a stronger degradation of the SS than tail states with a Gaussian decay of their density. The developed model allows more realistic simulations of TFETs including their non-idealities.

  5. A Seamless Ubiquitous Telehealthcare Tunnel

    Directory of Open Access Journals (Sweden)

    Sao-Jie Chen

    2013-08-01

    Full Text Available Mobile handheld devices are rapidly using to implement healthcare services around the World. Fundamentally, these services utilize telemedicine technologies. A disconnection of a mobile telemedicine system usually results in an interruption, which is embarrassing, and reconnection is necessary during the communication session. In this study, the Stream Control Transmission Protocol (SCTP is adopted to build a stable session tunnel to guarantee seamless switching among heterogeneous wireless communication standards, such as Wi-Fi and 3G. This arrangement means that the telemedicine devices will not be limited by a fixed wireless connection and can switch to a better wireless channel if necessary. The tunnel can transmit plain text, binary data, and video streams. According to the evaluation of the proposed software-based SCTP-Tunnel middleware shown, the performance is lower than anticipated and is slightly slower than a fixed connection. However, the transmission throughput is still acceptable for healthcare professionals in a healthcare enterprise or home care site. It is necessary to build more heterogeneous wireless protocols into the proposed tunnel-switching scheme to support all possible communication protocols. In addition, SCTP is another good choice for promoting communication in telemedicine and healthcare fields.

  6. Fuel cell-powered microfluidic platform for lab-on-a-chip applications: Integration into an autonomous amperometric sensing device.

    Science.gov (United States)

    Esquivel, J P; Colomer-Farrarons, J; Castellarnau, M; Salleras, M; del Campo, F J; Samitier, J; Miribel-Català, P; Sabaté, N

    2012-11-07

    The present paper reports for the first time the integration of a microfluidic system, electronics modules, amperometric sensor and display, all powered by a single micro direct methanol fuel cell. In addition to activating the electronic circuitry, the integrated power source also acts as a tuneable micropump. The electronics fulfil several functions. First, they regulate the micro fuel cell output power, which off-gas controls the flow rate of different solutions toward an electrochemical sensor through microfluidic channels. Secondly, as the fuel cell powers a three-electrode electrochemical cell, the electronics compare the working electrode output signal with a set reference value. Thirdly, if the concentration measured by the sensor exceeds this threshold value, the electronics switch on an integrated organic display. This integrated approach pushes forward the development of truly autonomous point-of-care devices relying on electrochemical detection.

  7. Investigations of the 0.020-scale 88-OTS Integrated Space Shuttle Vehicle Jet-Plume Model in the NASA/Ames Research Center 11 by11-Foot Unitary Plan Wind Tunnel (IA80). Volume 1

    Science.gov (United States)

    Nichols, M. E.

    1976-01-01

    The results are documented of jet plume effects wind tunnel test of the 0.020-scale 88-OTS launch configuration space shuttle vehicle model in the 11 x 11 foot leg of the NASA/Ames Research Center Unitary Plan Wind Tunnel. This test involved cold gas main propulsion system (MPS) and solid rocket motor (SRB) plume simulations at Mach numbers from 0.6 to 1.4. Integrated vehicle surface pressure distributions, elevon and rudder hinge moments, and wing and vertical tail root bending and torsional moments due to MPS and SRB plume interactions were determined. Nozzle power conditions were controlled per pretest nozzle calibrations. Model angle of attack was varied from -4 deg to +4 deg; model angle of sideslip was varied from -4 deg to +4 deg. Reynolds number was varied for certain test conditions and configurations, with the nominal freestream total pressure being 14.69 psia. Plotted force and pressure data are presented.

  8. Feasibility study on an integrated AEC-grid device for the optimization of image quality and exposure dose in mammography

    Science.gov (United States)

    Kim, Kyo-Tae; Yun, Ryang-Young; Han, Moo-Jae; Heo, Ye-Ji; Song, Yong-Keun; Heo, Sung-Wook; Oh, Kyeong-Min; Park, Sung-Kwang

    2017-10-01

    Currently, in the radiation diagnosis field, mammography is used for the early detection of breast cancer. In addition, studies are being conducted on a grid to produce high-quality images. Although the grid ratio of the grid, which affects the scattering removal rate, must be increased to improve image quality, it increases the total exposure dose. While the use of automatic exposure control is recommended to minimize this problem, existing mammography equipment, unlike general radiography equipment, is mounted on the back of a detector. Therefore, the device is greatly affected by the detector and supporting device, and it is difficult to control the exposure dose. Accordingly, in this research, an integrated AEC-grid device that simultaneously performs AEC and grid functions was used to minimize the unnecessary exposure dose while removing scattering, thereby realizing superior image quality.

  9. Three-dimensional image acquisition and reconstruction system on a mobile device based on computer-generated integral imaging.

    Science.gov (United States)

    Erdenebat, Munkh-Uchral; Kim, Byeong-Jun; Piao, Yan-Ling; Park, Seo-Yeon; Kwon, Ki-Chul; Piao, Mei-Lan; Yoo, Kwan-Hee; Kim, Nam

    2017-10-01

    A mobile three-dimensional image acquisition and reconstruction system using a computer-generated integral imaging technique is proposed. A depth camera connected to the mobile device acquires the color and depth data of a real object simultaneously, and an elemental image array is generated based on the original three-dimensional information for the object, with lens array specifications input into the mobile device. The three-dimensional visualization of the real object is reconstructed on the mobile display through optical or digital reconstruction methods. The proposed system is implemented successfully and the experimental results certify that the system is an effective and interesting method of displaying real three-dimensional content on a mobile device.

  10. Transit time for resonant tunneling

    International Nuclear Information System (INIS)

    Garcia Calderon, G.; Rubio, A.

    1990-09-01

    This work considers properties of the partial widths in one dimensional elastic resonant tunneling in order to propose a transit-time τ tr = (h/2π)/Γ n T res ) where Γ n is the elastic width and T res the transmission coefficient at resonance energy. This time is interpreted as an average over the resonance energy width. It is shown that the tunneling current density integrated across a sharp resonance is inversely proportional to τ tr . This transit time may be much larger than the values predicted by other definitions. (author). 20 refs

  11. Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

  12. Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

    Science.gov (United States)

    Alt, Shannon

    2016-01-01

    Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

  13. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  14. Optical integrated circuit of a 40-channel electrooptical LiNbO/sub 3/ modulator for data-processing devices

    Energy Technology Data Exchange (ETDEWEB)

    Bukreev, I.N.; Venediktov, V.V.; Gorbatovskii, M.V.; Demina, T.P.; Kashintsev, M.A.

    1988-06-01

    An optical integrated circuit for a 40-channel electrooptical phase modulator has been developed. The channel waveguides are prepared through Ti thermal diffusion into a Y-cut LiNbO/sub 3/ substrate. The half-wave voltage for each channel is 1.6 V at a modulating frequency bandwidth of 0-290 MHz. Results are presented from an experiment concerning the use of the modulator as an input device for the optical processing of radio signals.

  15. Electrochemical solid-phase microextraction of anions and cations using polypyrrole coatings and an integrated three-electrode device.

    Science.gov (United States)

    Liljegren, Gustav; Pettersson, Jean; Markides, Karin E; Nyholm, Leif

    2002-05-01

    A method for the extraction, transfer and desorption of anions and cations under controlled potential conditions employing a new integrated three-electrode device is described. The device, containing working, reference and counter electrodes, was prepared from tubes that could be moved vertically with respect to each other. In this way, a small amount of solvent, held by capillary force, remained between the electrodes when the device was lifted out of a solution after an extraction. This design allowed the potential control to be maintained at all times. With the new integrated device, it was possible to perform potential controlled desorption into vials containing as little as 200 microl of solution. The required ion exchange capacity was obtained by electrodeposition of a polypyrrole coating on the surface of the glassy carbon working electrode. Solid-phase microextractions of several cations or anions were performed simultaneously under potentiostatic control by doping the polypyrrole coating with different anions such as perchlorate and p-toluenesulfonate. The efficiency of the extractions, which could be altered by varying the potential of the working electrode, could be increased by 150 to 200% compared to extractions using normal solid-phase microextraction conditions under open circuit conditions. A constant potential of +1.0 V and -0.5 V with respect to the silver pseudo reference electrode, was found to be well-suited for the extraction of samples containing ppm concentrations of anions (chloride, nitrite, bromide, nitrate, sulfate and phosphate) and cations (cadmium, cobalt and zinc), respectively.

  16. The selective digital integrator: A new device for modulated polarization spectroscopy

    Science.gov (United States)

    Vrancic, Aljosa

    1998-12-01

    A new device, a selective digital integrator (SDI), for the acquisition of modulated polarization spectroscopy (MPS) signals is described. Special attention is given to the accurate measurement of very small (AC component of interest 50 kHz) signals at or below noise levels. Various data acquisition methods and problems associated with the collection of modulated signals are discussed. The SDI solves most of these problems and has the following advantages: it provides the average-time resolved profile of a modulated signal; it eliminates errors if the modulation is not sinusoidal; it enables separate measurements of the various phases of the signal modulation cycle; it permits simultaneous measurement of absorption, circular dichroism (CD) and linear dichroism (LD) spectra; it facilitates 3-D absorbance measurements; it has a wide gain-switching-free dynamic range (10 orders of magnitude or more); it offers a constant S/N ratio mode of operation; it eliminates the need for photomultiplier voltage feedback, and it has faster scanning speeds. The time-resolution, selectivity, wide dynamic range, and low-overhead on-the-fly data processing are useful for other modulated spectroscopy (MS) and non-MS experiments such as pulse height distribution and time-resolved pulse counting measurements. The advantages of the MPS-SDI method are tested on the first Rydberg electronic transitions of (+)-3- methylcyclopentanone. The experimental results validate the predicted SDI capabilities. However, they also point to two difficulties that had not been noted previously: the presence of LD in a gaseous sample and a pressure- dependence of the relative peak heights of the CD spectrum. Models for these anomalies are proposed. The presence of the oscillatory LD (but not an LD background) is explained with a sample cell model based on the observed polarization-dependent time-resolved profiles of transmitted light intensity. To obtain expressions for these intensities, a theoretical

  17. Reliability of IP Tunnels in Military Networks

    Directory of Open Access Journals (Sweden)

    Pólkowski Marcin

    2016-10-01

    Full Text Available The military networks, contrary to commercial ones, require standards which provide the highest level of security and reliability. The process to assuring redundancy of the main connections through applying various protocols and transmission media causes problem with time needed to re-establish virtual tunnels between different locations in case of damaged link. This article compares reliability of different IP (Internet Protocol tunnels, which were implemented on military network devices.

  18. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

    Science.gov (United States)

    Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

    2013-11-08

    Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  19. Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

    Directory of Open Access Journals (Sweden)

    Mehmet Cengiz Onbasli

    2013-11-01

    Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

  20. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  1. Radiation effects and soft errors in integrated circuits and electronic devices

    CERN Document Server

    Fleetwood, D M

    2004-01-01

    This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

  2. Improved multidimensional semiclassical tunneling theory.

    Science.gov (United States)

    Wagner, Albert F

    2013-12-12

    We show that the analytic multidimensional semiclassical tunneling formula of Miller et al. [Miller, W. H.; Hernandez, R.; Handy, N. C.; Jayatilaka, D.; Willets, A. Chem. Phys. Lett. 1990, 172, 62] is qualitatively incorrect for deep tunneling at energies well below the top of the barrier. The origin of this deficiency is that the formula uses an effective barrier weakly related to the true energetics but correctly adjusted to reproduce the harmonic description and anharmonic corrections of the reaction path at the saddle point as determined by second order vibrational perturbation theory. We present an analytic improved semiclassical formula that correctly includes energetic information and allows a qualitatively correct representation of deep tunneling. This is done by constructing a three segment composite Eckart potential that is continuous everywhere in both value and derivative. This composite potential has an analytic barrier penetration integral from which the semiclassical action can be derived and then used to define the semiclassical tunneling probability. The middle segment of the composite potential by itself is superior to the original formula of Miller et al. because it incorporates the asymmetry of the reaction barrier produced by the known reaction exoergicity. Comparison of the semiclassical and exact quantum tunneling probability for the pure Eckart potential suggests a simple threshold multiplicative factor to the improved formula to account for quantum effects very near threshold not represented by semiclassical theory. The deep tunneling limitations of the original formula are echoed in semiclassical high-energy descriptions of bound vibrational states perpendicular to the reaction path at the saddle point. However, typically ab initio energetic information is not available to correct it. The Supporting Information contains a Fortran code, test input, and test output that implements the improved semiclassical tunneling formula.

  3. Building-Integrated Solar Energy Devices based on Wavelength Selective Films

    Science.gov (United States)

    Ulavi, Tejas

    A potentially attractive option for building integrated solar is to employ hybrid solar collectors which serve dual purposes, combining solar thermal technology with either thin film photovoltaics or daylighting. In this study, two hybrid concepts, a hybrid photovoltaic/thermal (PV/T) collector and a hybrid 'solar window', are presented and analyzed to evaluate technical performance. In both concepts, a wavelength selective film is coupled with a compound parabolic concentrator (CPC) to reflect and concentrate the infrared portion of the solar spectrum onto a tubular absorber. The visible portion of the spectrum is transmitted through the concentrator to either a thin film Cadmium Telluride (CdTe) solar panel for electricity generation or into the interior space for daylighting. Special attention is given to the design of the hybrid devices for aesthetic building integration. An adaptive concentrator design based on asymmetrical truncation of CPCs is presented for the hybrid solar window concept. The energetic and spectral split between the solar thermal module and the PV or daylighting module are functions of the optical properties of the wavelength selective film and the concentrator geometry, and are determined using a Monte Carlo Ray-Tracing (MCRT) model. Results obtained from the MCRT can be used in conjugation with meteorological data for specific applications to study the impact of CPC design parameters including the half-acceptance angle thetac, absorber diameter D and truncation on the annual thermal and PV/daylighting efficiencies. The hybrid PV/T system is analyzed for a rooftop application in Phoenix, AZ. Compared to a system of the same area with independent solar thermal and PV modules, the hybrid PV/T provides 20% more energy, annually. However, the increase in total delivered energy is due solely to the addition of the thermal module and is achieved at an expense of a decrease in the annual electrical efficiency from 8.8% to 5.8% due to shading by

  4. A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

    Science.gov (United States)

    Dash, S.; Mishra, G. P.

    2015-09-01

    A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed.

  5. A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

    International Nuclear Information System (INIS)

    Dash, S; Mishra, G P

    2015-01-01

    A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed. (paper)

  6. Analysis of transient electromagnetic wave interactions on graphene-based devices using integral equations

    KAUST Repository

    Shi, Yifei

    2015-10-26

    Graphene is a monolayer of carbon atoms structured in the form of a honeycomb lattice. Recent experimental studies have revealed that it can support surface plasmons at Terahertz frequencies thanks to its dispersive conductivity. Additionally, characteristics of these plasmons can be dynamically adjusted via electrostatic gating of the graphene sheet (K. S. Novoselov, et al., Science, 306, 666–669, 2004). These properties suggest that graphene can be a building block for novel electromagnetic and photonic devices for applications in the fields of photovoltaics, bio-chemical sensing, all-optical computing, and flexible electronics. Simulation of electromagnetic interactions on graphene-based devices is not an easy task. The thickness of the graphene sheet is orders of magnitude smaller than any other geometrical dimension of the device. Consequently, discretization of such a device leads to significantly large number of unknowns and/or ill-conditioned matrix systems.

  7. An electrically actuated imperfect microbeam: Dynamical integrity for interpreting and predicting the device response

    KAUST Repository

    Ruzziconi, Laura; Younis, Mohammad I.; Lenci, Stefano

    2013-01-01

    observed in practice and where, instead, becomes vulnerable, i.e. they provide valuable information to operate the device in safe conditions according to the desired outcome and depending on the expected disturbances. © 2013 Springer Science+Business Media

  8. Integration of continuous-flow sampling with microchip electrophoresis using poly(dimethylsiloxane)-based valves in a reversibly sealed device.

    Science.gov (United States)

    Li, Michelle W; Martin, R Scott

    2007-07-01

    Here we describe a reversibly sealed microchip device that incorporates poly(dimethylsiloxane) (PDMS)-based valves for the rapid injection of analytes from a continuously flowing stream into a channel network for analysis with microchip electrophoresis. The microchip was reversibly sealed to a PDMS-coated glass substrate and microbore tubing was used for the introduction of gas and fluids to the microchip device. Two pneumatic valves were incorporated into the design and actuated on the order of hundreds of milliseconds, allowing analyte from a continuously flowing sampling stream to be injected into an electrophoresis separation channel. The device was characterized in terms of the valve actuation time and pushback voltage. It was also found that the addition of sodium dodecyl sulfate (SDS) to the buffer system greatly increased the reproducibility of the injection scheme and enabled the analysis of amino acids derivatized with naphthalene-2,3-dicarboxaldehyde/cyanide. Results from continuous injections of a 0.39 nL fluorescein plug into the optimized system showed that the injection process was reproducible (RSD of 0.7%, n = 10). Studies also showed that the device was capable of monitoring off-chip changes in concentration with a device lag time of 90 s. Finally, the ability of the device to rapidly monitor on-chip concentration changes was demonstrated by continually sampling from an analyte plug that was derivatized upstream from the electrophoresis/continuous flow interface. A reversibly sealed device of this type will be useful for the continuous monitoring and analysis of processes that occur either off-chip (such as microdialysis sampling) or on-chip from other integrated functions.

  9. Virtual reality devices integration in scientific visualization software in the VtkVRPN framework

    International Nuclear Information System (INIS)

    Journe, G.; Guilbaud, C.

    2005-01-01

    A high-quality scientific visualization software relies on ergonomic navigation and exploration. Those are essential to be able to perform an efficient data analysis. To help solving this issue, management of virtual reality devices has been developed inside the CEA 'VtkVRPN' framework. This framework is based on VTK, a 3D graphical library, and VRPN, a virtual reality devices management library. This document describes the developments done during a post-graduate training course. (authors)

  10. A microfluidic cell culture device with integrated microelectrodes for barrier studies

    DEFF Research Database (Denmark)

    Tan, Hsih-Yin; Dufva, Martin; Kutter, Jörg P.

    We present an eight cell culture microfluidic device fabricated using thiol-ene ‘click’ chemistry with embedded microelectrodes for evaluating barrier properties of human intestinal epithelial cells. The capability of the microelectrodes for trans-epithelial electrical resistance (TEER) measureme......) measurements was demonstrated by using confluent human colorectal epithelial cells (Caco-2) and rat fibroblast (CT 26) cells cultured in the microfluidic device....

  11. External circuit integration with electromagnetic particle in cell modeling of plasma focus devices

    International Nuclear Information System (INIS)

    Seng, Y. S.; Lee, P.; Rawat, R. S.

    2015-01-01

    The pinch performance of a plasma focus (PF) device is sensitive to the physical conditions of the breakdown phase. It is therefore essential to model and study the initial phase in order to optimize device performance. An external circuit is self consistently coupled to the electromagnetic particle in cell code to model the breakdown and initial lift phase of the United Nations University/International Centre for Theoretical Physics (UNU-ICTP) plasma focus device. Gas breakdown during the breakdown phase is simulated successfully, following a drop in the applied voltage across the device and a concurrent substantial rise in the circuit current. As a result, the plasma becomes magnetized, with the growing value of the magnetic field over time leading to the gradual lift off of the well formed current sheath into the axial acceleration phase. This lifting off, with simultaneous outward sheath motion along the anode and vertical cathode, and the strong magnetic fields in the current sheath region, was demonstrated in this work, and hence validates our method of coupling the external circuit to PF devices. Our method produces voltage waveforms that are qualitatively similar to the observed experimental voltage profiles of the UNU-ICTP device. Values of the mean electron energy before and after voltage breakdown turned out to be different, with the values after breakdown being much lower. In both cases, the electron energy density function turned out to be non-Maxwellian

  12. Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO{sub 2}/n-4H SiC and n{sup +} poly-Si/SiO{sub 2}/n-4H SiC MOS devices by different models

    Energy Technology Data Exchange (ETDEWEB)

    Kodigala, Subba Ramaiah, E-mail: kodigala@gmail.com [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Department of Physics and Astronomy, Department of Electrical and Computer Engineering, California State University, Northridge, CA 91330 (United States)

    2016-11-01

    This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO{sub 2}/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current–field (J–F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J–F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

  13. Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-01-01

    A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

  14. A Microfluidic Device with an Integrated Waveguide Beam Splitter for Velocity Measurements of Flowing Particles by Fourier Transformation

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Kwok, Y.C.; Eijkel, J.C.T.

    2003-01-01

    A microfabricated capillary electrophoresis device for velocity measurements of flowing particles is presented. It consists of a 1 x 128 planar waveguide beam splitter monolithically integrated with an electrically insulated fluidic channel network for fluorescence excitation at multiple points...... optics. The integrated planar waveguide beam splitter was, furthermore, permanently connected to the light source by a glued-on optical fiber, to achieve a robust and alignment-free operation of the system. The velocity was measured using a Fourier transformation with a Shah function, since the response...... of the fight array was designed to approximate a square profile. Deviations from this response were observed as a result of the multimode nature of the integrated waveguides....

  15. Integration and embedding of vital signs sensors and other devices into textiles

    OpenAIRE

    Abreu, Maria José Araújo Marques; Carvalho, Helder; Catarino, André P.; Rocha, A. M.

    2010-01-01

    The development of ubiquitous vital sign monitoring has become a very up-to-date research theme for many academics and industrial companies in the last years. With new materials and integration techniques, it is possible to implement vital sign monitoring in an economic manner, directly into textile products. This unobtrusive presence of sensors is especially important for the monitoring of children or elderly people. This paper focuses on two aspects of sensor integration: Integration of off...

  16. N-state random switching based on quantum tunnelling

    Science.gov (United States)

    Bernardo Gavito, Ramón; Jiménez Urbanos, Fernando; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J.; Woodhead, Christopher S.; Missous, Mohamed; Roedig, Utz; Young, Robert J.

    2017-08-01

    In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case. In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

  17. Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

    Science.gov (United States)

    Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

    2018-02-01

    Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

  18. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  19. Scalability of Ferroelectric Tunnel Junctions to Sub-100 nm Dimensions

    Science.gov (United States)

    Abuwasib, Mohammad

    The ferroelectric tunnel junction (FTJ) is an emerging low-power device that has potential application as a non-volatile memory and logic element in beyond-CMOS circuits. As a beyond- CMOS device, it is necessary to investigate the device scaling limit of FTJs to sub-50 nm dimensions. In addition to the fabrication of scaled FTJs, the integration challenges and CMOS compatibility of the device needs to be addressed. FTJ device performance including ON/OFF ratio, memory retention time, switching endurance, write /read speed and power dissipation need to be characterized for benchmarking of this emerging device, compared to its charge-based counterparts such as DRAM, NAND/NOR flash, as well as to other emerging memory devices. In this dissertation, a detailed investigation of scaling of BaTiO3 (BTO) based FTJs was performed, from full-scale integration to electrical characterization. Two types of FTJs with La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) bottom electrodes were investigated in this work namely; Co/BTO/LSMO and Co/BTO/SRO. A CMOS compatible fabrication process for integration of Co/BTO/LSMO FTJ devices ( 3x3 microm 2) was demonstrated for the first time using standard photolithography and self-aligned RIE technique. The fabricated FTJ device showed switching behavior, however, degradation of the LSMO contact was observed during the fabrication process. A detailed investigation of the contact properties of bottom electrode materials (LSMO, SRO) for BTO-based FTJs was performed. The process and thermal stability of different contact overlayers (Ti, Pt) was explained to understand the nature of the ohmic contacts for metal to SRO and LSMO layers. Noble metals-to-SRO was found to form the most stable contacts for FTJs. Based on this study, a systematic scalability study of Co/BTO/SRO FTJs was carried out from micron ( 3x3 microm2) to submicron ( 200x200 nm2) dimensions. Positive UP Negative Down (PUND) measurement confirms the ferroelectric properties of the BTO

  20. Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

    Science.gov (United States)

    Chatterjee, Rohit

    In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

  1. Exploration of the affordances of mobile devices in integrating theory and clinical practice in an undergraduate nursing programme

    Directory of Open Access Journals (Sweden)

    Juliana J. Willemse

    2015-09-01

    Full Text Available Background: Promoting the quality and effectiveness of nursing education is an important factor, given the increased demand for nursing professionals. It is important to establish learning environments that provide personalised guidance and feedback to students about their practical skills and application of their theoretical knowledge. Objective: To explore and describe the knowledge and points of view of students and educators about introduction of new technologies into an undergraduate nursing programme. Method: The qualitative design used Tesch’s (1990 steps of descriptive data analysis to complete thematic analysis of the data collected in focus group discussions (FGDs andindividual interviews to identify themes. Results: Themes identified from the students’ FGDs and individual interviews included:mobile devices as a communication tool; email, WhatsApp and Facebook as methods of communication; WhatsApp as a method of communication; nurses as role-models in the clinical setting; setting personal boundaries; and impact of mobile devices in clinical practiceon professionalism. Themes identified from the FGD, individual interviews and a discussion session held with educators included: peer learning via mobile devices; email, WhatsApp and Facebook as methods of communication; the mobile device as a positive learning method; students need practical guidance; and ethical concerns in clinical facilities about Internet access and use of mobile devices. Conclusion: The research project established an understanding of the knowledge and points of view of students and educators regarding introduction of new technologies into an undergraduate nursing programme with the aim of enhancing integration of theory and clinical practice through use of mobile devices.

  2. Two simple examples for the micro-nano integration of nanowires as electronic device elements

    International Nuclear Information System (INIS)

    Adelung, Rainer

    2011-01-01

    As a part of the conference talk about the mass fabrication and applications of nanostructures, the aim of this paper is to review and compare two approaches for the simple fabrication and integration and of nanostructures into Si-based microchips. The purpose of the integration is the utilization of the different and advanced electronic properties of nanowires. The first method is based on a fracture approach, that integrates nanowires bound to a Si substrate between micro electrodes. These are arrange in a horizontal manner, the second approach allows to integrate free standing nanowires and even 3 dimensional nanowire networks in the chip. As an example for the electronic properties of the nano-micro integrated structures the UV light sensitivity is sown here.

  3. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    Science.gov (United States)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  4. Integration of single oocyte trapping, in vitro fertilization and embryo culture in a microwell-structured microfluidic device.

    Science.gov (United States)

    Han, Chao; Zhang, Qiufang; Ma, Rui; Xie, Lan; Qiu, Tian; Wang, Lei; Mitchelson, Keith; Wang, Jundong; Huang, Guoliang; Qiao, Jie; Cheng, Jing

    2010-11-07

    In vitro fertilization (IVF) therapy is an important treatment for human infertility. However, the methods for clinical IVF have only changed slightly over decades: culture medium is held in oil-covered drops in Petri dishes and manipulation occurs by manual pipetting. Here we report a novel microwell-structured microfluidic device that integrates single oocyte trapping, fertilization and subsequent embryo culture. A microwell array was used to capture and hold individual oocytes during the flow-through process of oocyte and sperm loading, medium substitution and debris cleaning. Different microwell depths were compared by computational modeling and flow washing experiments for their effectiveness in oocyte trapping and debris removal. Fertilization was achieved in the microfluidic devices with similar fertilization rates to standard oil-covered drops in Petri dishes. Embryos could be cultured to blastocyst stages in our devices with developmental status individually monitored and tracked. The results suggest that the microfluidic device may bring several advantages to IVF practices by simplifying oocyte handling and manipulation, allowing rapid and convenient medium changing, and enabling automated tracking of any single embryo development.

  5. A medical application integrating remote 3D visualization tools to access picture archiving and communication system on mobile devices.

    Science.gov (United States)

    He, Longjun; Ming, Xing; Liu, Qian

    2014-04-01

    With computing capability and display size growing, the mobile device has been used as a tool to help clinicians view patient information and medical images anywhere and anytime. However, for direct interactive 3D visualization, which plays an important role in radiological diagnosis, the mobile device cannot provide a satisfactory quality of experience for radiologists. This paper developed a medical system that can get medical images from the picture archiving and communication system on the mobile device over the wireless network. In the proposed application, the mobile device got patient information and medical images through a proxy server connecting to the PACS server. Meanwhile, the proxy server integrated a range of 3D visualization techniques, including maximum intensity projection, multi-planar reconstruction and direct volume rendering, to providing shape, brightness, depth and location information generated from the original sectional images for radiologists. Furthermore, an algorithm that changes remote render parameters automatically to adapt to the network status was employed to improve the quality of experience. Finally, performance issues regarding the remote 3D visualization of the medical images over the wireless network of the proposed application were also discussed. The results demonstrated that this proposed medical application could provide a smooth interactive experience in the WLAN and 3G networks.

  6. Integration of power flow controlling devices and HVDC-systems into the optimal power flow; Integration von leistungsflusssteuernden Komponenten und HGUe-Systemen in die Leistungsflussoptimierung

    Energy Technology Data Exchange (ETDEWEB)

    Natemeyer, Hendrik; Scheufen, Martin; Roehder, Andreas; Schnettler, Armin [RWTH Aachen Univ. (Germany). Inst. fuer Hochspannungstechnik (IFHT)

    2012-07-01

    An integration of High Voltage Direct Current Transmission Systems (HVDC) or Flexible AC Transmission Systems (FACTS) into power systems enables the possibility to actively influence and control the corresponding power flows in the electrical network. The systemic benefits are a more efficient utilization of existing transmission capacities and improved controllability in fault situations. This paper introduces methods of a coordinative control of such devices and their representation in stationary power flow calculations including the control in (n-1)-cases. This might be a useful tool for the network operation, especially in face of more frequently occurring fast system changes. Examples of a corresponding implementation and application are provided. (orig.)

  7. Linking the Regulatory and Reimbursement Processes for Medical Devices : The Need for Integrated Assessments

    NARCIS (Netherlands)

    Ciani, Oriana; Wilcher, Britni; van Giessen, Anoukh; Taylor, Rod S.

    2017-01-01

    Much criticism has been directed at the licencing requirements for medical devices (MDs) as they often result in a lack of robust evidence to inform health technology assessment (HTA) decisions. To better understand the current international decisional framework on MD technologies, we undertook

  8. Mobile Device Management in the DOD Enterprise Network: Factors for Risk Management, Integration, and It Acquisition

    Science.gov (United States)

    2013-03-01

    Administration NFC Near Field Communications NIST National Institute of Standards and Technology NPRST Navy Personnel Research, Studies, and Technology ...information technology (IT) system acquisition process to acquire a mobile device management (MDM) toolset to mitigate information assurance (IA) risks...method study to understand the concerns of federal information technology professionals who are knowledgeable on MDM and the acquisition

  9. Coupled Cryogenic Thermal and Electrical Models for Transient Analysis of Superconducting Power Devices with Integrated Cryogenic Systems

    Science.gov (United States)

    Satyanarayana, S.; Indrakanti, S.; Kim, J.; Kim, C.; Pamidi, S.

    2017-12-01

    Benefits of an integrated high temperature superconducting (HTS) power system and the associated cryogenic systems on board an electric ship or aircraft are discussed. A versatile modelling methodology developed to assess the cryogenic thermal behavior of the integrated system with multiple HTS devices and the various potential configurations are introduced. The utility and effectiveness of the developed modelling methodology is demonstrated using a case study involving a hypothetical system including an HTS propulsion motor, an HTS generator and an HTS power cable cooled by an integrated cryogenic helium circulation system. Using the methodology, multiple configurations are studied. The required total cooling power and the ability to maintain each HTS device at the required operating temperatures are considered for each configuration and the trade-offs are discussed for each configuration. Transient analysis of temperature evolution in the cryogenic helium circulation loop in case of a system failure is carried out to arrive at the required critical response time. The analysis was also performed for a similar liquid nitrogen circulation for an isobaric condition and the cooling capacity ratio is used to compare the relative merits of the two cryogens.

  10. Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

    Science.gov (United States)

    Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

    2017-07-25

    An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

  11. Integrated health outcomes research strategies in drug or medical device development, pre- and postmarketing: time for change.

    Science.gov (United States)

    Badía, Xavier; Guyver, Alice; Magaz, Sol; Bigorra, Juan

    2002-06-01

    The implementation of health outcomes research as a healthcare decision-making tool has expanded rapidly in the last decade. Drugs and medical devices are increasingly being required to demonstrate not only their efficacy and safety characteristics, but also their performance in at least three core dimensions of health outcomes research: clinical effectiveness, patient-reported outcomes and economic outcomes. However, the current integration of health outcomes research lacks coordination and communication and as a result, money and time is being spent on the generation of health outcomes research data which can be both insufficient and fail to satisfy the information demands of all the relevant stakeholders. In response to this, a new paradigm is evolving which involves the implementation of health outcomes research strategies that encompass the development, pre- and postmarketing stages of a drug or medical device.

  12. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  13. Evaluation of System-Integrated Smart Grid Devices using Software- and Hardware-in-the-Loop

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, Blake; Chakraborty, Sudipta; Lauss, Georg; Brundlinger, Roland; Conklin, Russell

    2016-12-12

    This paper presents a concise description of state-of-the-art real-time simulation-based testing methods and demonstrates how they can be used independently and/or in combination as an integrated development and validation approach for smart grid DERs and systems. A three-part case study demonstrating the application of this integrated approach at the different stages of development and validation of a system-integrated smart photovoltaic (PV) inverter is also presented. Laboratory testing results and perspectives from two international research laboratories are included in the case study.

  14. Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

    International Nuclear Information System (INIS)

    Gajewski, Krzysztof; Piasecki, Tomasz; Kopiec, Daniel; Gotszalk, Teodor

    2017-01-01

    Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown. (paper)

  15. Integration of a network aware traffic generation device into a computer network emulation platform

    CSIR Research Space (South Africa)

    Von Solms, S

    2014-07-01

    Full Text Available Flexible, open source network emulation tools can provide network researchers with significant benefits regarding network behaviour and performance. The evaluation of these networks can benefit greatly from the integration of realistic, network...

  16. Printed energy storage devices by integration of electrodes and separators into single sheets of paper

    KAUST Repository

    Hu, Liangbing; Wu, Hui; Cui, Yi

    2010-01-01

    We report carbon nanotube thin film-based supercapacitors fabricated with printing methods, where electrodes and separators are integrated into single sheets of commercial paper. Carbon nanotube films are easily printed with Meyer rod coating or ink

  17. Simulation study of a 3-D device integrating FinFET and UTBFET

    KAUST Repository

    Fahad, Hossain M.; Hu, Chenming; Hussain, Muhammad Mustafa

    2015-01-01

    By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate Fin

  18. Integration of Magneto-Optical Materials for Novel Optical Devices & Magnetophotonic Crystals, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This work proposes to capitalize on our Phase I success in monolithically integrating magneto-optic and magnetic materials with semiconductor platforms in order to...

  19. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  20. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  1. Road and Railroad Tunnels

    Data.gov (United States)

    Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

  2. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  3. Tunnel vision.

    Science.gov (United States)

    Valenzuela, Terence; Mosier, Jarrod; Sakles, John

    2013-01-01

    Since 2000, many studies of advanced emergency airway management have appeared in the medical literature. Although most described patients in the operating room, intensive care unit or emergency department, studies of video laryngoscopy in the field are in progress and beginning to appear in the literature. Video laryngoscopy provides better views of the glottis, and it permits more successful intubations with fewer attempts. Price reductions as more devices, some specifically intended for EMS, enter the market will lower the entry costs for adoption. It is my prediction that in five years, video laryngoscopy will be the method of choice for endotracheal intubation in the field.

  4. Simulation study of a 3-D device integrating FinFET and UTBFET

    KAUST Repository

    Fahad, Hossain M.

    2015-01-01

    By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.

  5. Investigation into scanning tunnelling luminescence microscopy

    International Nuclear Information System (INIS)

    Manson-Smith, S.K.

    2001-01-01

    This work reports on the development of a scanning tunnelling luminescence (STL) microscope and its application to the study of Ill-nitride semiconductor materials used in the production of light emitting devices. STL microscopy is a technique which uses the high resolution topographic imaging capabilities of the scanning tunnelling microscope (STM) to generate high resolution luminescence images. The STM tunnelling current acts as a highly localised source of electrons (or holes) which generates luminescence in certain materials. Light generated at the STM tunnelling junction is collected concurrently with the height variation of the tunnelling probe as it is scanned across a sample surface, producing simultaneous topographic and luminescence images. Due to the very localised excitation source, high resolution luminescence images can be obtained. Spectroscopic resolution can be obtained by using filters. Additionally, the variation of luminescence intensity with tunnel current and with bias voltage can provide information on recombination processes and material properties. The design and construction of a scanning tunnelling luminescence microscope is described in detail. Operating under ambient conditions, the microscope has several novel features, including a new type of miniature inertial slider-based approach motor, large solid-angle light collection optical arrangement and a tip-height regulation system which requires the minimum of operator input. (author)

  6. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  7. SafeNet: a methodology for integrating general-purpose unsafe devices in safe-robot rehabilitation systems.

    Science.gov (United States)

    Vicentini, Federico; Pedrocchi, Nicola; Malosio, Matteo; Molinari Tosatti, Lorenzo

    2014-09-01

    Robot-assisted neurorehabilitation often involves networked systems of sensors ("sensory rooms") and powerful devices in physical interaction with weak users. Safety is unquestionably a primary concern. Some lightweight robot platforms and devices designed on purpose include safety properties using redundant sensors or intrinsic safety design (e.g. compliance and backdrivability, limited exchange of energy). Nonetheless, the entire "sensory room" shall be required to be fail-safe and safely monitored as a system at large. Yet, sensor capabilities and control algorithms used in functional therapies require, in general, frequent updates or re-configurations, making a safety-grade release of such devices hardly sustainable in cost-effectiveness and development time. As such, promising integrated platforms for human-in-the-loop therapies could not find clinical application and manufacturing support because of lacking in the maintenance of global fail-safe properties. Under the general context of cross-machinery safety standards, the paper presents a methodology called SafeNet for helping in extending the safety rate of Human Robot Interaction (HRI) systems using unsafe components, including sensors and controllers. SafeNet considers, in fact, the robotic system as a device at large and applies the principles of functional safety (as in ISO 13489-1) through a set of architectural procedures and implementation rules. The enabled capability of monitoring a network of unsafe devices through redundant computational nodes, allows the usage of any custom sensors and algorithms, usually planned and assembled at therapy planning-time rather than at platform design-time. A case study is presented with an actual implementation of the proposed methodology. A specific architectural solution is applied to an example of robot-assisted upper-limb rehabilitation with online motion tracking. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  8. APS-Workshop on Characterization of MMIC (Monolithic Microwave Integrated Circuit) Devices for Array Antenna

    Science.gov (United States)

    Smetana, Jerry (Editor); Mittra, Raj (Editor); Laprade, Nick; Edward, Bryan; Zaghloul, Amir

    1987-01-01

    The IEEE AP-S ADCOM is attempting to expand its educational, tutorial and information exchange activities as a further benefit to all members. To this end, ADCOM will be forming specialized workshops on topics of interest to its members. The first such workshop on Characterization and Packaging of MMIC Devices for Array Antennas was conceived. The workshop took place on June 13, 1986 as part of the 1986 International Symposium sponsored by IEEE AP-S and URSI in Philadelphia, PA, June 9-13, 1986. The workshop was formed to foster the interchange of ideas among MMIC device users and to provide a forum to collect and focus information among engineers experienced and interested in the topic. After brief presentations by the panelists and comments from attendees on several subtopics, the group was divided into working committees. Each committee evaluated and made recommendations on one of the subtopics.

  9. Integrated Magneto-Optical Devices for On-Chip Photonic Systems

    Science.gov (United States)

    2017-09-01

    Technology SEPTEMBER 2017 Final Report Approved for public release; distribution is unlimited. See additional restrictions described on inside pages STINFO...PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER Massachusetts Institute of Technology 77 Massachusetts Avenue...interferometer (MZI) isolator devices based on optical modeling, for both transverse- electric (TE) and transverse-magnetic (TM) polarization. 15. SUBJECT TERMS

  10. Achievement report for fiscal 1998 on the research and development of quantum function device. Research on technological trend; 1998 nendo ryoshika kino soshi no kenkyu kaihatsu seika hokokusho. Gijutsu doko chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    To effectively promote the research and development of quantum function devices, the advancement of the research and development concerned is surveyed and problems in the course of research and development are isolated, analyzed, and discussed, and a survey is conducted on technological trends. Researches are conducted through research committee meetings, on-the-spot surveys of overseas activities, and international conferences. As the result, reports are compiled on the integration of multi-value logic devices using tunnelling control function devices, integration of logic memory devices based on quantum levels, integration of quantum interband coupled multifunction devices, silicon insulation film tunnel memory device, mass dot function memory, quantum wave switching function device, integration of single electron logic devices, integration of CMOS coupled type single electron devices, basic technology of single electron device, etc. As for common basic technology, an integrated device in which a quantum function element and CMOS are merged, superspeed quantum device using light, spontaneous formation of InGaN quantum dot and GaSb/GaAs quantum dot, electron moderation mechanism in quantum dot, etc., are compiled into reports. (NEDO)

  11. Experimental Investigation on an Energy Efficient Solar Tunnel Dryer

    OpenAIRE

    M. R. Seshan Ram

    2012-01-01

    The research determines the effectiveness of the solar tunnel dryer developed and the product dried in the device is superior in quality and also it is compatible with branded products available in the market. The study also determines Acetamide as Phase Key words: Solar Tunnel Dryer, Acetamide as Phase Change Materials, Conversion into Thermal Energy, Thermocouple, and Pyranometer

  12. Characteristics and optimisation of vertical and planar tunnelling-FETs

    International Nuclear Information System (INIS)

    Sterkel, M; Wang, P-F; Nirschl, T; Fabel, B; Bhuwalka, K K; Schulze, J; Eisele, I; Schmitt-Landsiedel, D; Hansch, W

    2005-01-01

    Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today's MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated

  13. Integration of graphene sensor with electrochromic device on modulus-gradient polymer for instantaneous strain visualization

    Science.gov (United States)

    Yang, Tingting; Zhong, Yujia; Tao, Dashuai; Li, Xinming; Zang, Xiaobei; Lin, Shuyuan; Jiang, Xin; Li, Zhihong; Zhu, Hongwei

    2017-09-01

    In nature, some animals change their deceptive coloration for camouflage, temperature preservation or communication. This astonishing function has inspired scientists to replicate the color changing abilities of animals with artificial skin. Recently, some studies have focused on the smart materials and devices with reversible color changing or light-emitting properties for instantaneous strain visualization. However, most of these works only show eye-detectable appearance change when subjected to large mechanical deformation (100%-500% strain), and conspicuous color change at small strain remains rarely explored. In the present study, we developed a user-interactive electronic skin with human-readable optical output by assembling a highly sensitive resistive strain sensor with a stretchable organic electrochromic device (ECD) together. We explored the substrate effect on the electromechanical behavior of graphene and designed a strategy of modulus-gradient structure to employ graphene as both the highly sensitive strain sensing element and the insensitive stretchable electrode of the ECD layer. Subtle strain (0-10%) was enough to evoke an obvious color change, and the RGB value of the color quantified the magnitude of the applied strain. Such high sensitivity to smaller strains (0-10%) with color changing capability will potentially enhance the function of wearable devices, robots and prosthetics in the future.

  14. Experimental Results on a Wireless Wattmeter Device for the Integration in Home Energy Management Systems

    Directory of Open Access Journals (Sweden)

    Eduardo M. G. Rodrigues

    2017-03-01

    Full Text Available This paper presents a home area network (HAN-based domestic load energy consumption monitoring prototype device as part of an advanced metering system (AMS. This device can be placed on individual loads or configured to measure several loads as a whole. The wireless communication infrastructure is supported on IEEE 805.12.04 radios that run a ZigBee stack. Data acquisition concerning load energy transit is processed in real time and the main electrical parameters are then transmitted through a RF link to a wireless terminal unit, which works as a data logger and as a human-machine interface. Voltage and current sensing are implemented using Hall effect principle-based transducers, while C code is developed on two 16/32-bit microcontroller units (MCUs. The main features and design options are then thoroughly discussed. The main contribution of this paper is that the proposed metering system measures the reactive energy component through the Hilbert transform for low cost measuring device systems.

  15. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  16. A self-powered biosensing device with an integrated hybrid biofuel cell for intermittent monitoring of analytes.

    Science.gov (United States)

    Majdecka, Dominika; Draminska, Sylwia; Janusek, Dariusz; Krysinski, Paweł; Bilewicz, Renata

    2018-04-15

    In this work, we propose an integrated self-powered sensing system, driven by a hybrid biofuel cell (HBFC) with carbon paper discs coated with multiwalled carbon nanotubes. The sensing system has a biocathode made from laccase or bilirubin oxidase, and the anode is made from a zinc plate. The system includes a dedicated custom-built electronic control unit for the detection of oxygen and catechol analytes, which are central to medical and environmental applications. Both the HBFC and sensors, operate in a mediatorless direct electron transfer mode. The measured characteristics of the HBFC with externally applied resistance included the power-time dependencies under flow cell conditions, the sensors performance (evaluated by cyclic voltammetry), and chronoamperometry. The HBFC is integrated with analytical devices and operating in a pulse mode form long-run monitoring experiments. The HBFC generated sufficient power for wireless data transmission to a local computer. Copyright © 2017 Elsevier B.V. All rights reserved.

  17. "Size-Independent" Single-Electron Tunneling.

    Science.gov (United States)

    Zhao, Jianli; Sun, Shasha; Swartz, Logan; Riechers, Shawn; Hu, Peiguang; Chen, Shaowei; Zheng, Jie; Liu, Gang-Yu

    2015-12-17

    Incorporating single-electron tunneling (SET) of metallic nanoparticles (NPs) into modern electronic devices offers great promise to enable new properties; however, it is technically very challenging due to the necessity to integrate ultrasmall (<10 nm) particles into the devices. The nanosize requirements are intrinsic for NPs to exhibit quantum or SET behaviors, for example, 10 nm or smaller, at room temperature. This work represents the first observation of SET that defies the well-known size restriction. Using polycrystalline Au NPs synthesized via our newly developed solid-state glycine matrices method, a Coulomb Blockade was observed for particles as large as tens of nanometers, and the blockade voltage exhibited little dependence on the size of the NPs. These observations are counterintuitive at first glance. Further investigations reveal that each observed SET arises from the ultrasmall single crystalline grain(s) within the polycrystal NP, which is (are) sufficiently isolated from the nearest neighbor grains. This work demonstrates the concept and feasibility to overcome orthodox spatial confinement requirements to achieve quantum effects.

  18. Retrofits for Energy Efficient Office Buildings: Integration of Optimized Photovoltaics in the Form of Responsive Shading Devices

    Directory of Open Access Journals (Sweden)

    Hardi K. Abdullah

    2017-11-01

    Full Text Available This study presents a retrofit strategy: integrating optimized photovoltaics (PV in the form of responsive shading devices using a dual-axis solar tracking system. A prototype-based model was fabricated to compare the efficiency of PV in this implementation with the conventional fixed installation. The office building, T1 Empire World in Erbil, was selected as a retrofit case study and for the application of the proposed integration system. In order to assess the effectiveness of the proposed retrofit method, the energy performance of the base case is simulated to be compared later with the energy performance simulations after the integration technique. The amount of generated electricity from the PV surfaces of the integrated shading elements is calculated. The energy simulations were performed using OpenStudio® (NREL, Washington, DC, USA, EnergyPlusTM (NREL, Washington, DC, USA, and Grasshopper/ Ladybug tools in which the essential results were recorded for the baseline reference, as well as the energy performance of the retrofitted building. The results emphasize that the PV-integrated responsive shading devices can maximize the efficiency of PV cells by 36.8% in comparison to the fixed installation. The integrated system can provide approximately 15.39% of the electricity demand for operating the building. This retrofit method has reduced the total site energy consumption by 33.2% compared to the existing building performance. Total electricity end-use of the various utilities was lowered by 33.5%, and the total natural gas end-use of heating demand was reduced by 30.9%. Therefore, the percentage reduction in electricity cooling demand in July and August is 42.7% due to minimizing the heat gain in summer through blocking the sun’s harsh rays from penetrating into interior spaces of the building. In general, this system has multiple benefits, starting with being extremely efficient and viable in generating sustainable alternative energy

  19. Classification of DNA nucleotides with transverse tunneling currents

    DEFF Research Database (Denmark)

    Pedersen, Jonas Nyvold; Boynton, Paul; Ventra, Massimiliano Di

    2017-01-01

    , however. In realistic liquid environments, typical currents in tunneling devices are of the order of picoamps. This corresponds to only six electrons per microsecond, and this number affects the integration time required to do current measurements in real experiments. This limits the speed of sequencing......, though current fluctuations due to Brownian motion of the molecule average out during the required integration time. Moreover, data acquisition equipment introduces noise, and electronic filters create correlations in time-series data. We discuss how these effects must be included in the analysis of, e.......g., the assignment of specific nucleobases to current signals. As the signals from different molecules overlap, unambiguous classification is impossible with a single measurement. We argue that the assignment of molecules to a signal is a standard pattern classification problem and calculation of the error rates...

  20. Neutron detection with integrated sub-2 nm Pt nanoparticles and 10B enriched dielectrics—A direct conversion device

    Directory of Open Access Journals (Sweden)

    Haisheng Zheng

    2016-07-01

    Full Text Available We report a direct conversion solid-state neutron detection device fabricated by combining the large neutron capture cross-section of 10B with the charge trapping attributes of sub-2 nm Pt nanoparticles (Pt NPs in MOSCAP structures. The 10B embedded polystyrene based neutron conversion layer also serves as the dielectric layer. Neutron sensing is achieved through carrier generation within the active 10B based dielectric layer and subsequent transfer to the embedded Pt NP layers, resulting in a significant change of the device's flat-band voltage upon ex-situ characterization. Both single and dual Pt NP layer embedded architectures, with varying electron addition energies, were tested within this study. While dual-layer Pt NPs embedded direct conversion devices with higher electron addition energy are shown to successfully capture charges generated through energetic reaction product upon neutron capture, the single Pt NP layer embedded device structure with lower electron addition energy displays signs of charge loss attributable to direct tunneling in the ex-situ capacitance–voltage measurement. Although only ex-situ detector operation is demonstrated within the realms of this study, sensitive in-situ neutron detectors and ultra-stable ex-situ dosimeters may be achievable utilizing a similar structure by fine-tuning the Pt NP size and the number of Pt NP layers in the device. Keywords: Neutron detection, Sub-2 nm Pt nanoparticles, 10B enriched dielectrics, Direct conversion, MOSCAP, Coulomb blockade

  1. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. An FMM-FFT accelerated integral equation solver for characterizing electromagnetic wave propagation in mine tunnels and galleries loaded with conductors

    KAUST Repository

    Yücel, Abdulkadir C.

    2014-07-01

    Reliable wireless communication and tracking systems in underground mines are of paramount importance to increase miners\\' productivity while monitoring the environmental conditions and increasing the effectiveness of rescue operations. Key to the design and optimization of such systems are electromagnetic (EM) simulation tools capable of analyzing wave propagation in electromagnetically large mine tunnels and galleries loaded with conducting cables (power, telephone) and mining equipment (trolleys, rails, carts), and potentially partially obstructed by debris from a cave-in. Current tools for simulating EM propagation in mine environments leverage (multi-) modal decompositions (Emslie et. al., IEEE Trans. Antennas Propag., 23, 192-205, 1975; Sun and Akyildiz, IEEE Trans. Commun., 58, 1758-1768, 2010), ray-tracing techniques (Zhang, IEEE Tran. Vehic. Tech., 5, 1308-1314, 2003), or full wave methods. Modal approaches and ray-tracing techniques cannot accurately account for the presence of conductors, intricate details of transmitters/receivers, wall roughness, or unstructured debris from a cave-in. Classical full-wave methods do not suffer from such restrictions. However, they require prohibitively large computational resources when applied to the analysis of electromagnetically large tunnels loaded with conductors. Recently, an efficient hybrid method of moment and transmission line solver has been developed to analyze the EM wave propagation inside tunnels loaded with conductors (Brocker et. al., in Proc IEEE AP-S Symp, pp.1,2, 2012). However, the applicability of the solver is limited to the characterization of EM wave propagation at medium frequency band.

  3. A Laboratory Experimental Study: An FBG-PVC Tube Integrated Device for Monitoring the Slip Surface of Landslides

    Science.gov (United States)

    Zhang, Shaojie; Chen, Jiang; Teng, Pengxiao; Wei, Fangqiang; Chen, Qiao

    2017-01-01

    A new detection device was designed by integrating fiber Bragg grating (FBG) and polyvinyl chloride (PVC) tube in order to monitor the slip surface of a landslide. Using this new FBG-based device, a corresponding slope model with a pre-set slip surface was designed, and seven tests with different soil properties were carried out in laboratory conditions. The FBG sensing fibers were fixed on the PVC tube to measure strain distributions of PVC tube at different elevation. Test results indicated that the PVC tube could keep deformation compatible with soil mass. The new device was able to monitor slip surface location before sliding occurrence, and the location of monitored slip surface was about 1–2 cm above the pre-set slip surface, which basically agreed with presupposition results. The monitoring results are expected to be used to pre-estimate landslide volume and provide a beneficial option for evaluating the potential impact of landslides on shipping safety in the Three Gorges area. PMID:29084157

  4. Teachers Exploring Mobile Device Integration: A Case Study of Secondary Teachers’ Responses to iPads in the Classroom

    Directory of Open Access Journals (Sweden)

    Stella Erbes

    2016-10-01

    Full Text Available This qualitative study seeks to understand and resolve the difficulties that teachers encounter when integrating mobile devices in classrooms. To address the issue of teacher receptiveness, three undergraduate researchers collaborated with an education professor in spring 2012 to complete a qualitative study with a two-fold purpose: 1 to investigate how two secondary teachers in an independent school responded when adopting a class set of iPads throughout one school cycle (six school days; and 2 to elucidate what a school could do better to support teachers who are piloting mobile device integration. Although previous studies have commonly focused on the impact of 1:1 programs on student achievement, this study focuses on the role of the instructor when designing and delivering instruction with or without iPads. Qualitative data were collected and recorded after a series of observations and interviews with the teachers and the information technology director. All interviews were roughly transcribed and coded systematically so that patterns could be noted. Results found that both instructors commented about their instructional philosophy, instructional objectives, technology support, teacher efficacy, and classroom. At the conclusion of the experiments, the teachers had favorable impressions of the technology, despite initial misgivings and early technical issues.

  5. Integrated optical devices for wavelength division multiplexing using PECVD and direct UV writing techniques

    DEFF Research Database (Denmark)

    Zauner, Dan; Leistiko, Otto

    1999-01-01

    channel waveguides are presented: a conventional method and direct UV writing. It is shown that an optimized three layer glass structure yields directly UV written waveguides with low insertion losses. Integrated optical structures have been designed and fabricated. The impact of process variations...

  6. Fluidic separation in microstructured devices – concepts and their Integration into process flow networks

    NARCIS (Netherlands)

    Vural - Gürsel, I.; Kockmann, N.; Hessel, V.

    2017-01-01

    FDA and pharmaceutical industry turn the vision of integrated end-to-end manufacturing currently into reality. Accordingly, besides the efforts to develop reactions in continuous flow, it is also essential to consider separation of reaction mixtures and purification of the desired product - and how

  7. Novel highly integrated biodiesel production technology in a centrifugal contactor separator device

    NARCIS (Netherlands)

    Kraai, G. N.; Schuur, B.; van Zwol, F.; van de Bovenkamp, H. H.; Heeres, H. J.

    2009-01-01

    The base catalyzed production of biodiesel (FAME) from sunflower oil and methanol in a continuous centrifugal contactor separator (CCS) with integrated reaction and phase separation was studied. The effect of catalyst loading (sodium methoxide), temperature, rotational frequency and flow rates of

  8. Rapid PCR amplification using a microfluidic device with integrated microwave heating and air impingement cooling.

    Science.gov (United States)

    Shaw, Kirsty J; Docker, Peter T; Yelland, John V; Dyer, Charlotte E; Greenman, John; Greenway, Gillian M; Haswell, Stephen J

    2010-07-07

    A microwave heating system is described for performing polymerase chain reaction (PCR) in a microfluidic device. The heating system, in combination with air impingement cooling, provided rapid thermal cycling with heating and cooling rates of up to 65 degrees C s(-1) and minimal over- or under-shoot (+/-0.1 degrees C) when reaching target temperatures. In addition, once the required temperature was reached it could be maintained with an accuracy of +/-0.1 degrees C. To demonstrate the functionality of the system, PCR was successfully performed for the amplification of the Amelogenin locus using heating rates and quantities an order of magnitude faster and smaller than current commercial instruments.

  9. Tunneling effect on double potential barriers GaAs and PbS

    Science.gov (United States)

    Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

    2018-04-01

    A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

  10. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-01-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

  11. Integrating health economics modeling in the product development cycle of medical devices: a Bayesian approach.

    Science.gov (United States)

    Vallejo-Torres, Laura; Steuten, Lotte M G; Buxton, Martin J; Girling, Alan J; Lilford, Richard J; Young, Terry

    2008-01-01

    Medical device companies are under growing pressure to provide health-economic evaluations of their products. Cost-effectiveness analyses are commonly undertaken as a one-off exercise at the late stage of development of new technologies; however, the benefits of an iterative use of economic evaluation during the development process of new products have been acknowledged in the literature. Furthermore, the use of Bayesian methods within health technology assessment has been shown to be of particular value in the dynamic framework of technology appraisal when new information becomes available in the life cycle of technologies. In this study, we set out a methodology to adapt these methods for their application to directly support investment decisions in a commercial setting from early stages of the development of new medical devices. Starting with relatively simple analysis from the very early development phase and proceeding to greater depth of analysis at later stages, a Bayesian approach facilitates the incorporation of all available evidence and would help companies to make better informed choices at each decision point.

  12. Simulation of single-electron tunnelling circuits using SPICE

    NARCIS (Netherlands)

    Van de Haar, R.

    2004-01-01

    Single-electron tunnelling (SET) devices have very promising properties, like their extremely low power consumption, their extremely high switching speeds and their extremely small physical dimensions. Since the field of SET devices is far from being fully exploited, and their device properties seem

  13. A flux calibration device for the SuperNova Integral Field Spectrograph (SNIFS)

    Science.gov (United States)

    Lombardo, Simona; Aldering, Greg; Hoffmann, Akos; Kowalski, Marek; Kuesters, Daniel; Reif, Klaus; Rigault, Michael

    2014-07-01

    Observational cosmology employing optical surveys often require precise flux calibration. In this context we present SNIFS Calibration Apparatus (SCALA), a flux calibration system developed for the SuperNova Integral Field Spectrograph (SNIFS), operating at the University of Hawaii 2.2 m telescope. SCALA consists of a hexagonal array of 18 small parabolic mirrors distributed over the face of, and feeding parallel light to, the telescope entrance pupil. The mirrors are illuminated by integrating spheres and a wavelength-tunable (from UV to IR) light source, generating light beams with opening angles of 1°. These nearly parallel beams are flat and flux-calibrated at a subpercent level, enabling us to calibrate our "telescope + SNIFS system" at the required precision.

  14. InP-based spotsize converter for integration with switching devices

    NARCIS (Netherlands)

    Stulemeijer, J.; Bakker, A.F.; Moerman, I.; Groen, F.H.; Smit, M.K.

    1999-01-01

    We have designed and fabricated an InGaAsP-InP based spotsize converter (SSC), which is compatible with the waveguide structure used in monolithic integrated ADM's and OXC's. In a first experiment, a total coupling loss to a cleaved fiber of 4.2 dB for TE and 3.9 dB for TM was realized with a 1.5

  15. FHIR Healthcare Directories: Adopting Shared Interfaces to Achieve Interoperable Medical Device Data Integration.

    Science.gov (United States)

    Tyndall, Timothy; Tyndall, Ayami

    2018-01-01

    Healthcare directories are vital for interoperability among healthcare providers, researchers and patients. Past efforts at directory services have not provided the tools to allow integration of the diverse data sources. Many are overly strict, incompatible with legacy databases, and do not provide Data Provenance. A more architecture-independent system is needed to enable secure, GDPR-compatible (8) service discovery across organizational boundaries. We review our development of a portable Data Provenance Toolkit supporting provenance within Health Information Exchange (HIE) systems. The Toolkit has been integrated with client software and successfully leveraged in clinical data integration. The Toolkit validates provenance stored in a Blockchain or Directory record and creates provenance signatures, providing standardized provenance that moves with the data. This healthcare directory suite implements discovery of healthcare data by HIE and EHR systems via FHIR. Shortcomings of past directory efforts include the ability to map complex datasets and enabling interoperability via exchange endpoint discovery. By delivering data without dictating how it is stored we improve exchange and facilitate discovery on a multi-national level through open source, fully interoperable tools. With the development of Data Provenance resources we enhance exchange and improve security and usability throughout the health data continuum.

  16. Development of an integrated countermeasure device for use in long-duration spaceflight

    Science.gov (United States)

    Streeper, T.; Cavanagh, P. R.; Hanson, A. M.; Carpenter, R. D.; Saeed, I.; Kornak, J.; Frassetto, L.; Grodsinsky, C.; Funk, J.; Lee, S. M. C.; Spiering, B. A.; Bloomberg, J.; Mulavara, A.; Sibonga, J.; Lang, T.

    2011-06-01

    Prolonged weightlessness is associated with declines in musculoskeletal, cardiovascular, and sensorimotor health. Consequently, in-flight countermeasures are required to preserve astronaut health. We developed and tested a novel exercise countermeasure device (CCD) for use in spaceflight with the aim of preserving musculoskeletal and cardiovascular health along with an incorporated balance training component. Additionally, the CCD features a compact footprint, and a low power requirement. Methods: After design and development of the CCD, we carried out a training study to test its ability to improve cardiovascular and muscular fitness in healthy volunteers. Fourteen male and female subjects (41.4±9.0 years, 69.5±15.4 kg) completed 12 weeks (3 sessions per week) of concurrent strength and endurance training on the CCD. All training was conducted with the subject in orthostasis. When configured for spaceflight, subjects will be fixed to the device via a vest with loop attachments secured to subject load devices. Subjects were tested at baseline and after 12 weeks for 1-repetition max leg press strength (1RM), peak oxygen consumption (VO 2peak), and isokinetic joint torque (ISO) at the hip, knee, and ankle. Additionally, we evaluated subjects after 6 weeks of training for changes in VO 2peak and 1RM. Results: VO 2peak and 1RM improved after 6 weeks, with additional improvements after 12 weeks (1.95±0.5, 2.28±0.5, 2.47±0.6 L min -1, and 131.2±63.9,182.8±75.0, 207.0±75.0 kg) for baseline, 6 weeks, and 12 weeks, respectively. ISO for hip adduction, adduction, and ankle plantar flexion improved after 12 weeks of training (70.3±39.5, 76.8±39.2, and 55.7±21.7 N m vs. 86.1±37.3, 85.1±34.3, and 62.1±26.4 N m, respectively). No changes were observed for ISO during hip flexion, knee extension, or knee flexion. Conclusions: The CCD is effective at improving cardiovascular fitness and isotonic leg strength in healthy adults. Further, the improvement in hip adductor

  17. Flexible MgO Barrier Magnetic Tunnel Junctions.

    Science.gov (United States)

    Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

    2016-07-01

    Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Optimum DMOS cell doping profiles for high-voltage discrete and integrated device technologies

    Science.gov (United States)

    Shenai, Krishna

    1992-05-01

    It is shown that the implantation and activation sequences of B and As result in significant variations in the contact resistance and p-base sheet resistance beneath the n+-source diffusion of a DMOSFET cell. For identical process parameters, the contact resistance of As-doped n+ silicon was significantly improved when high-dose B was implanted due to higher As surface concentration. The SUPREM III process modeling results were found to be in qualitative agreement with the measured spreading resistance profiles and the discrepancies could be attributed to larger high-temperature diffusion constants used in SUPREM III and the coupled As-B diffusion/activation effects that are not accounted for in process modeling. The experimental results are discussed within the framework of fabricating high-performance DMOSFET cells and CMOS high-voltage devices on the same chip for discrete and smart-power applications.

  19. Design Through Integration of On-Board Calibration Device with Imaging Spectroscopy Instruments

    Science.gov (United States)

    Stange, Michael

    2012-01-01

    The main purpose of the Airborne Visible and Infrared Imaging Spectroscopy (AVIRIS) project is to "identify, measure, and monitor constituents of the Earth's surface and atmosphere based on molecular absorption and particle scattering signatures." The project designs, builds, and tests various imaging spectroscopy instruments that use On-Board Calibration devices (OBC) to check the accuracy of the data collected by the spectrometers. The imaging instrument records the spectral signatures of light collected during flight. To verify the data is correct, the OBC shines light which is collected by the imaging spectrometer and compared against previous calibration data to track spectral response changes in the instrument. The spectral data has the calibration applied to it based on the readings from the OBC data in order to ensure accuracy.

  20. [Marketing approval and market surveillance of medical devices in Germany: Where does policy integration take place?].

    Science.gov (United States)

    Lang, Achim

    2014-01-01

    Since 2011 new regulatory measures regarding medical devices have been set up with the aim to eliminate obstacles to innovations and to find more coordinated ways to marketing authorisation and market surveillance. This essay investigates whether these new and existing coordination mechanisms build up to a Joined-up Government approach. The analysis shows that the regulatory process should be adjusted along several dimensions. First, many organisations lack awareness regarding their stakeholders and focus solely on their immediate organisational activities. Second, the regulatory process (marketing authorisation and market surveillance) is too fragmented for an effective communication to take place. Finally, the underlying strategy process is an ad-hoc approach lacking continuity and continued involvement of, in particular, the responsible federal ministries. Copyright © 2013. Published by Elsevier GmbH.

  1. A review on all-perovskite multiferroic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Yuewei Yin

    2017-12-01

    Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

  2. Inducer Hydrodynamic Load Measurement Devices

    Science.gov (United States)

    Skelley, Stephen E.; Zoladz, Thomas F.

    2002-01-01

    Marshall Space Flight Center (MSFC) has demonstrated two measurement devices for sensing and resolving the hydrodynamic loads on fluid machinery. The first - a derivative of the six component wind tunnel balance - senses the forces and moments on the rotating device through a weakened shaft section instrumented with a series of strain gauges. This "rotating balance" was designed to directly measure the steady and unsteady hydrodynamic loads on an inducer, thereby defining both the amplitude and frequency content associated with operating in various cavitation modes. The second device - a high frequency response pressure transducer surface mounted on a rotating component - was merely an extension of existing technology for application in water. MSFC has recently completed experimental evaluations of both the rotating balance and surface-mount transducers in a water test loop. The measurement bandwidth of the rotating balance was severely limited by the relative flexibility of the device itself, resulting in an unexpectedly low structural bending mode and invalidating the higher frequency response data. Despite these limitations, measurements confirmed that the integrated loads on the four-bladed inducer respond to both cavitation intensity and cavitation phenomena. Likewise, the surface-mount pressure transducers were subjected to a range of temperatures and flow conditions in a non-rotating environment to record bias shifts and transfer functions between the transducers and a reference device. The pressure transducer static performance was within manufacturer's specifications and dynamic response accurately followed that of the reference.

  3. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  4. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

    2017-01-01

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  5. Printed energy storage devices by integration of electrodes and separators into single sheets of paper

    Science.gov (United States)

    Hu, Liangbing; Wu, Hui; Cui, Yi

    2010-05-01

    We report carbon nanotube thin film-based supercapacitors fabricated with printing methods, where electrodes and separators are integrated into single sheets of commercial paper. Carbon nanotube films are easily printed with Meyer rod coating or ink-jet printing onto a paper substrate due to the excellent ink absorption of paper. A specific capacity of 33 F/g at a high specific power of 250 000 W/kg is achieved with an organic electrolyte. Such a lightweight paper-based supercapacitor could be used to power paper electronics such as transistors or displays.

  6. Printed energy storage devices by integration of electrodes and separators into single sheets of paper

    KAUST Repository

    Hu, Liangbing

    2010-01-01

    We report carbon nanotube thin film-based supercapacitors fabricated with printing methods, where electrodes and separators are integrated into single sheets of commercial paper. Carbon nanotube films are easily printed with Meyer rod coating or ink-jet printing onto a paper substrate due to the excellent ink absorption of paper. A specific capacity of 33 F/g at a high specific power of 250 000 W/kg is achieved with an organic electrolyte. Such a lightweight paper-based supercapacitor could be used to power paper electronics such as transistors or displays. © 2010 American Institute of Physics.

  7. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  8. Development of the Integrated Hydrogen Production System Using Micro-structured Devices

    International Nuclear Information System (INIS)

    Jung Min Sohn; Young Chang Byun; Jun Yeon Cho; Youngwoon Kwon; Jaehoon Choe

    2006-01-01

    A plate-type integrated fuel processor, which consisted of three different micro-reactors which were a reformer with combustor, two heat exchangers and an evaporator with combustor, was developed for the hydrogen production as feed of over 100 W-grade PEMFC. The methanol steam reforming was chosen in our fuel processor to produce highly pure hydrogen. Our system could be operated without any external electric heat supply. Hydrogen which might come from off gas was used as the combustion fuel at initial stage and methanol was used during the steam reaction. Cu/Zn/Al 2 O 3 and Pt/Al 2 O 3 catalysts were chosen for steam reforming of methanol and the combustion and coated on microchannel-patterned stainless steel sheets. The performance of the fuel processor was tested for long-term use. The integrated system was operated consistently with methanol conversion of over 80.0 mol% at 300 C for 20 hrs without deactivation of catalyst. The maximum composition of hydrogen and production rate on dry basis was about 70 % and 1.7 L/min, respectively. The efficiency of our system was calculated based on the LHV of methanol and hydrogen. Overall thermal efficiency of our fuel processor was 59.5 % and thermal power of hydrogen was about 300 W. (authors)

  9. Integrated oxide graphene based device for laser inactivation of pathogenic microorganisms

    Science.gov (United States)

    Grishkanich, Alexsandr; Ruzankina, Julia; Afanasyev, Mikhail; Paklinov, Nikita; Hafizov, Nail

    2018-02-01

    We develop device for virus disinfection of pathogenic microorganisms. Viral decontamination can be carried out due to hard ultraviolet irradiation and singlet oxygen destroying the genetic material of a virus capsid. UV rays can destroy DNA, leading to the formation of dimers of nucleic acids. This practically does not occur in tissues, tk. UV rays penetrate badly through them, however, the viral particles are small and UV can destroy their genetic material, RNA / DNA and the virus can not replicate. It is with the construction of the ultraviolet laser water disinfection system (UFLOV) based on the continuous and periodic pulsed ultraviolet laser sources (pump) binds to solve sterility and depyrogenation of water. It has been established that small doses of UV irradiation stimulate reproduction, and large doses cause the death of pathogenic microorganisms. The effect of a dose of ultraviolet is the result of photochemical action on the substance of a living bacterial cell or virion. Also complex photodynamic laser inactivation on graphene oxide is realized.

  10. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    CERN Document Server

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  11. Integrating medical, assistive, and universally designed products and technologies: assistive technology device classification (ATDC).

    Science.gov (United States)

    Bauer, Stephen; Elsaesser, Linda-Jeanne

    2012-09-01

    ISO26000:2010 International Guidance Standard on Organizational Social Responsibility requires that effective organizational performance recognize social responsibility, including the rights of persons with disabilities (PWD), engage stakeholders and contribute to sustainable development. Millennium Development Goals 2010 notes that the most vulnerable people require special attention, while the World Report on Disability 2011 identifies improved data collection and removal of barriers to rehabilitation as the means to empower PWD. The Assistive Technology Device Classification (ATDC), Assistive Technology Service Method (ATSM) and Matching Person and Technology models provide an evidence-based, standardized, internationally comparable framework to improve data collection and rehabilitation interventions. The ATDC and ATSM encompass and support universal design (UD) principles, and use the language and concepts of the International Classification of Functioning, Disability and Health (ICF). Use ATDC and ICF concepts to differentiate medical, assistive and UD products and technology; relate technology "types" to markets and costs; and support provision of UD products and technologies as sustainable and socially responsible behavior. Supply-side and demand-side incentives are suggested to foster private sector development and commercialization of UD products and technologies. Health and health-related professionals should be knowledgeable of UD principles and interventions.

  12. New Knowledge of tunneling from photonic experiments

    International Nuclear Information System (INIS)

    Nimtz, G.

    1997-01-01

    Photonic experiments have shown, that the propagation of evanescent (tunneling) modes can proceed at speeds faster than the velocity of light in vacuum (superluminal). The superluminal velocities include signal and energy propagation. The analogy between the classical Helmholtz equation and the quantum mechanical Schroedinger equation was quantitatively proved in classical photonic experiments. The Hartman effect, i.e. the prediction that the tunneling time is independent of the barrier length was for the first time evidenced in a photonic analogous tunneling experiment by Enders and Nimtz. It is also shown, that the resonant state life time is not determined by the barrier traversal time. For electronic tunneling devices it follows, that the quantum mechanical phase time calculations indeed deliver the relevant intrinsic tunneling time and consequently allow to predict the dynamical specification of a device. The present theoretical descriptions of the propagation of evanescent modes is not fully compatible with the experimental situation. Superluminal signal and energy transport has been measured, and this has to be properly analyzed. May the advanced field solutions help to obtain a satisfactory theoretical description of the recent experimental results of the propagation of evanescent modes? (author)

  13. Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

    Science.gov (United States)

    Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

    2017-09-26

    Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

  14. A new device for production measurements of field integral and field direction of SC dipole magnets

    International Nuclear Information System (INIS)

    Preissner, H.; Bouchard, R.; Luethke, P.; Makulski, A.; Meinke, R.; Nesteruk, K.

    1990-01-01

    The performance of all superconducting magnets for HERA is tested in the DESY magnet test facility and their magnetic field is measured. For dipole magnets the magnitude and the direction of the field is measured point by point along the axis with a mole-type probe which is transported through the beam pipe. The positioning of the probe is done via a toothed belt with an accuracy of 1 mm. The probe houses two Hall probes perpendicular to each other, a gravitational tilt sensor and an NMR probe. The field in the plateau is measured by NMR, the fringe field is measured by the Hall probes and the field direction relative to gravity is obtained from the ratio of the two Hall voltages and the tilt sensor. The field integral is determined with an accuracy of 10 -4 and the average field direction is measured with an accuracy of 0.2 mrad. 4 refs., 4 figs

  15. Occlusal screening as basis for the integration of conjunct gnato-prosthetic devices.

    Science.gov (United States)

    Popescu, M R; Dăguci, C; Dragomir, L P

    2010-07-01

    The functional disorders of the masticator apparatus impose the accomplishment of a phased assessment protocol which should permit the marking out and prefigure the future treatment plan, at the same time. The association of clinical data with therapeutic options and last but not least with the patient's "expectations" represent a particularly important stage within the final occlusal and aesthetic integration. In order to analyse the data collected through examination various assessment systems are available nowadays which permit the correlation of symptoms identified with adequate diagnoses. The planning of the therapy on the basis of clinical registrations associated with the challenges of the bio-aesthetics shall impose a new conduct within the orofacial rehabilitation of patients.

  16. Tuberculosis Biomarker Extraction and Isothermal Amplification in an Integrated Diagnostic Device.

    Directory of Open Access Journals (Sweden)

    Amy Creecy

    Full Text Available In this study, we integrated magnetic bead-based sample preparation and isothermal loop mediated amplification (LAMP of TB in a single tube. Surrogate sputum samples produced by the Program for Appropriate Technology in Health containing inactivated TB bacteria were used to test the diagnostic. In order to test the sample preparation method, samples were lysed, and DNA was manually extracted and eluted into water in the tube. In a thermal cycler, LAMP amplified TB DNA from 103 TB cells/mL of sputum at 53.5 ± 3.3 minutes, 104 cells/mL at 46.3 ± 2.2 minutes, and 105 cells/mL at 41.6 ± 1.9 minutes. Negative control samples did not amplify. Next, sample preparation was combined with in-tubing isothermal LAMP amplification by replacing the water elution chamber with a LAMP reaction chamber. In this intermediate configuration, LAMP amplified 103 cells/mL at 74 ± 10 minutes, 104 cells/mL at 60 ± 9 minutes, and 105 TB cells/mL of sputum at 54 ± 9 minutes. Two of three negative controls did not amplify; one amplified at 100 minutes. In the semi-automated system, DNA was eluted directly into an isothermal reaction solution containing the faster OptiGene DNA polymerase. The low surrogate sputum concentration, 103 TB cells/mL, amplified at 52.8 ± 3.3 minutes, 104 cells/mL at 45.4 ± 11.3 minutes, and 105 cells/mL at 31.8 ± 2.9 minutes. TB negative samples amplified at 66.4 ± 7.4 minutes. This study demonstrated the feasibility of a single tube design for integrating sample preparation and isothermal amplification, which with further development could be useful for point-of-care applications, particularly in a low-resource setting.

  17. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  18. Three-dimensional crossbar interconnection using planar-integrated free-space optics and digital mirror-device

    Science.gov (United States)

    Lohmann, U.; Jahns, J.; Limmer, S.; Fey, D.

    2011-01-01

    We consider the implementation of a dynamic crossbar interconnect using planar-integrated free-space optics (PIFSO) and a digital mirror-device™ (DMD). Because of the 3D nature of free-space optics, this approach is able to solve geometrical problems with crossings of the signal paths that occur in waveguide optical and electrical interconnection, especially for large number of connections. The DMD device allows one to route the signals dynamically. Due to the large number of individual mirror elements in the DMD, different optical path configurations are possible, thus offering the chance for optimizing the network configuration. The optimization is achieved by using an evolutionary algorithm for finding best values for a skewless parallel interconnection. Here, we present results and experimental examples for the use of the PIFSO/DMD-setup.

  19. Sticker-type ECG/PPG concurrent monitoring system hybrid integration of CMOS SoC and organic sensor device.

    Science.gov (United States)

    Yongsu Lee; Hyeonwoo Lee; Seunghyup Yoo; Hoi-Jun Yoo

    2016-08-01

    The sticker-type sensor system is proposed targeting ECG/PPG concurrent monitoring for cardiovascular diseases. The stickers are composed of two types: Hub and Sensor-node (SN) sticker. Low-power CMOS SoC for measuring ECG and PPG signal is hybrid integrated with organic light emitting diodes (OLEDs) and organic photo detector (OPD). The sticker has only 2g weight and only consumes 141μW. The optical calibration loop is adopted for maintaining SNR of PPG signal higher than 30dB. The pulse arrival time (PAT) and SpO2 value can be extracted from various body parts and verified comparing with the reference device from 20 people in-vivo experiments.

  20. Integrated Prediction and Mitigation Methods of Materials Damage and Lifetime Assessment during Plasma Operation and Various Instabilities in Fusion Devices

    Energy Technology Data Exchange (ETDEWEB)

    Hassanein, Ahmed [Purdue Univ., West Lafayette, IN (United States)

    2015-03-31

    This report describes implementation of comprehensive and integrated models to evaluate plasma material interactions during normal and abnormal plasma operations. The models in full3D simulations represent state-of-the art worldwide development with numerous benchmarking of various tokamak devices and plasma simulators. In addition, significant number of experimental work has been performed in our center for materials under extreme environment (CMUXE) at Purdue to benchmark the effect of intense particle and heat fluxes on plasma-facing components. This represents one-year worth of work and resulted in more than 23 Journal Publications and numerous conferences presentations. The funding has helped several students to obtain their M.Sc. and Ph.D. degrees and many of them are now faculty members in US and around the world teaching and conducting fusion research. Our work has also been recognized through many awards.

  1. Integrated Prediction and Mitigation Methods of Materials Damage and Lifetime Assessment during Plasma Operation and Various Instabilities in Fusion Devices

    International Nuclear Information System (INIS)

    Hassanein, Ahmed

    2015-01-01

    This report describes implementation of comprehensive and integrated models to evaluate plasma material interactions during normal and abnormal plasma operations. The models in full3D simulations represent state-of-the art worldwide development with numerous benchmarking of various tokamak devices and plasma simulators. In addition, significant number of experimental work has been performed in our center for materials under extreme environment (CMUXE) at Purdue to benchmark the effect of intense particle and heat fluxes on plasma-facing components. This represents one-year worth of work and resulted in more than 23 Journal Publications and numerous conferences presentations. The funding has helped several students to obtain their M.Sc. and Ph.D. degrees and many of them are now faculty members in US and around the world teaching and conducting fusion research. Our work has also been recognized through many awards.

  2. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  3. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  4. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

    Science.gov (United States)

    Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

    2018-04-01

    In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

  5. Development of integrated superconducting devices for signal preprocessing. Final report; Entwicklung supraleitender Bausteine der Signalvorverarbeitung. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Biehl, M.; Koch, R.; Neuhaus, M.; Scherer, T.; Jutzi, W.

    1998-02-01

    SPICE and CADENCE based tools for designing, simulating and optimizing SFQ and RSFQ circuits have been developed as well as a standard cell library corresponding to the fabrication technology established at the IEGI. A 12 bit flux shuttle shift register using Nb/Al Josephson junctions with a new write and readout gate has been fabricated and tested successfully; the power dissipation is 9 nW/bit/GHz. A pseudo random pulse generator was developed correspondingly. Simulations of RSFQ toggle flipflops during a large number of clock cycles demonstrated that the digital performance of counters is limited to clock frequencies below 100 GHz by dynamic effects, especially of parasitic inductances. Therefore dc measurements based on the voltage-frequency Josephson relationship must be followed by real time measurements of single SFQ word pulses. A four stage Nb based RSFQ counter in a coplanar waveguide test jig was tested up to a frequency of 2 GHz, limited by the available 32 bit pattern generator and the bandwith of the sampling oscilloscope, yielding bit error rates of about 10{sup -12}. Using YBCO technology, a 4 bit SFQ shift register (T=40 K) as well as miniaturized coplanar microwave devices for satellite and communication applications at 10 GHz (T=77 K) have been designed and fabricated. A 4 bit instantaneous real time frequency meter (IFM) and a microwave filter with a 3-dB bandwidth of only 1.8% have been mounted on the cold head of a split-cycle Stirling cooler (AEG, 1.5 W rate at 80 K) and tested successfully. Hybrid devices, e.g. amplifiers and oscillators, combining active semiconductor components and low loss coplanar YBCO transmission lines operated at 77 K seem very promising. (orig.) [Deutsch] Werkzeuge der Auslegung, Simulation und Optimierung von SFQ- und RSFQ-Schaltungen auf der Basis von SPICE und CADENCE wurden am IEGI entwickelt und eingesetzt. Eine auf die Technologien des Instituts zugeschnittene Bibliothek von Zellen ist vorhanden. Mit der

  6. Intrasurgical Human Retinal Imaging With Manual Instrument Tracking Using a Microscope-Integrated Spectral-Domain Optical Coherence Tomography Device.

    Science.gov (United States)

    Hahn, Paul; Carrasco-Zevallos, Oscar; Cunefare, David; Migacz, Justin; Farsiu, Sina; Izatt, Joseph A; Toth, Cynthia A

    2015-07-01

    To characterize the first in-human intraoperative imaging using a custom prototype spectral-domain microscope-integrated optical coherence tomography (MIOCT) device during vitreoretinal surgery with instruments in the eye. Under institutional review board approval for a prospective intraoperative study, MIOCT images were obtained at surgical pauses with instruments held static in the vitreous cavity and then concurrently with surgical maneuvers. Postoperatively, MIOCT images obtained at surgical pauses were compared with images obtained with a high-resolution handheld spectral-domain OCT (HHOCT) system with objective endpoints, including acquisition of images acceptable for analysis and identification of predefined macular morphologic or pathologic features. Human MIOCT images were successfully obtained before incision and during pauses in surgical maneuvers. MIOCT imaging confirmed preoperative diagnoses, such as epiretinal membrane, full-thickness macular hole, and vitreomacular traction and demonstrated successful achievement of surgical goals. MIOCT and HHOCT images obtained at surgical pauses in two cohorts of five patients were comparable with greater than or equal to 80% correlation in 80% of patients. Real-time video-imaging concurrent with surgical manipulations enabled, for the first time using this device, visualization of dynamic instrument-retina interaction with targeted OCT tracking. MIOCT is successful for imaging at surgical pauses and for real-time image guidance with implementation of targeted OCT tracking. Even faster acquisition speeds are currently being developed with incorporation of a swept-source MIOCT engine. Further refinements and investigations will be directed toward continued integration for real-time volumetric imaging of surgical maneuvers. Ongoing development of seamless MIOCT systems will likely transform surgical visualization, approaches, and decision-making.

  7. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  8. WOCSDICE 1998: 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 24-27, 1998, Zeuthen, Germany

    National Research Council Canada - National Science Library

    1998-01-01

    .... Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices...

  9. On-line integration of computer controlled diagnostic devices and medical information systems in undergraduate medical physics education for physicians.

    Science.gov (United States)

    Hanus, Josef; Nosek, Tomas; Zahora, Jiri; Bezrouk, Ales; Masin, Vladimir

    2013-01-01

    We designed and evaluated an innovative computer-aided-learning environment based on the on-line integration of computer controlled medical diagnostic devices and a medical information system for use in the preclinical medical physics education of medical students. Our learning system simulates the actual clinical environment in a hospital or primary care unit. It uses a commercial medical information system for on-line storage and processing of clinical type data acquired during physics laboratory classes. Every student adopts two roles, the role of 'patient' and the role of 'physician'. As a 'physician' the student operates the medical devices to clinically assess 'patient' colleagues and records all results in an electronic 'patient' record. We also introduced an innovative approach to the use of supportive education materials, based on the methods of adaptive e-learning. A survey of student feedback is included and statistically evaluated. The results from the student feedback confirm the positive response of the latter to this novel implementation of medical physics and informatics in preclinical education. This approach not only significantly improves learning of medical physics and informatics skills but has the added advantage that it facilitates students' transition from preclinical to clinical subjects. Copyright © 2011 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  10. Analisis Efektivitas Perangkat pada Program Desa Broadband Terpadu [Analysis of Device Effectiveness in Integrated Broadband Village Program

    Directory of Open Access Journals (Sweden)

    Hilarion Hamjen

    2016-12-01

    Full Text Available Pemerintah berkomitmen mendukung pertumbuhan e-commerce dan ekonomi digital di Indonesia untuk mencapai visi Indonesia 2020 sebagai negara ekonomi digital terbesar di Asia Tenggara. Secara fundamental diperlukan dukungan konektivitas nasional dari tingkat pusat sampai ke tingkat lokal, salah satunya melalui program KPU/USO yaitu program DBT (Desa Broadband Terpadu. Penelitian ini bertujuan untuk mengetahui efektivitas perangkat pada program DBT phase 1 dan keterkaitannya dengan konektivitas, dengan menggunakan metode analisis kepentingan kinerja dan uji statistik Chi square. Berdasarkan hasil penelitian diketahui bahwa efektivitas perangkat meliputi variabel kondisi, fungsi, pemeliharaan dan pemanfaatan rata-rata adalah 84,5 persen. Dengan nilai efektivitas tersebut diketahui bahwa keseluruhan variabel kondisi perangkat, fungsi dan pemanfaatannya tidak mempengaruhi konektivitas.  *****The Indonesian government has a strong commitment in supporting the growth of e-commerce and Digital Economy in Indonesia to attain Indonesia’s vision by 2020 as the largest digital economy nation in Southeast Asia. Fundamentally, the national connectivity supports from central level to local level are needed, where one of them comes from Integrated Broadband Village program. This research determines the effectiveness of devices in the DBT program and its correlation to the connectivity, by using importance-performance analysis method and Chi-square statistical test. It is known from the result that the effectiveness of devices, including condition, function, maintenance, and utilization variables, achieves 84.5 percent on average. The value shows that all mentioned variables have insignificant correlations to the connectivity.

  11. Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters

    International Nuclear Information System (INIS)

    Hirano, Hideki; Tanaka, Shuji; Kimura, Tetsuya; Koutsaroff, Ivoyl P; Kadota, Michio; Hashimoto, Ken-ya; Esashi, Masayoshi

    2013-01-01

    This paper presents a film transfer process to integrate barium strontium titanate (BST) metal–insulator–metal (MIM) structures with surface acoustic wave (SAW) devices on a lithium niobate (LN) substrate. A high-quality BST film grown on a Si substrate above 650 °C was patterned into the MIM structures, and transferred to a LN substrate below 130 °C by Ar-plasma-activated Au–Au bonding and the Si lost wafer process. Simple test SAW devices with the transferred BST variable capacitors (VCs) were fabricated and characterized. The resonance frequency of a one-port SAW resonator with the VC connected in series changed from 999 to 1018 MHz, when a dc bias voltage of 3 V was applied to the VC. Although the observed frequency tuning range was smaller than expected due to the degradation of BST in the process, the experimental result demonstrated that a tunable SAW filter with the transferred BST VCs was feasible. (paper)

  12. Mixed-Dimensionality VLSI-Type Configurable Tools for Virtual Prototyping of Biomicrofluidic Devices and Integrated Systems

    Science.gov (United States)

    Makhijani, Vinod B.; Przekwas, Andrzej J.

    2002-10-01

    This report presents results of a DARPA/MTO Composite CAD Project aimed to develop a comprehensive microsystem CAD environment, CFD-ACE+ Multiphysics, for bio and microfluidic devices and complete microsystems. The project began in July 1998, and was a three-year team effort between CFD Research Corporation, California Institute of Technology (CalTech), University of California, Berkeley (UCB), and Tanner Research, with Mr. Don Verlee from Abbott Labs participating as a consultant on the project. The overall objective of this project was to develop, validate and demonstrate several applications of a user-configurable VLSI-type mixed-dimensionality software tool for design of biomicrofluidics devices and integrated systems. The developed tool would provide high fidelity 3-D multiphysics modeling capability, l-D fluidic circuits modeling, and SPICE interface for system level simulations, and mixed-dimensionality design. It would combine tools for layouts and process fabrication, geometric modeling, and automated grid generation, and interfaces to EDA tools (e.g. Cadence) and MCAD tools (e.g. ProE).

  13. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  14. Quantum tunneling time

    International Nuclear Information System (INIS)

    Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.

    2004-01-01

    We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes

  15. Josephson tunneling and nanosystems

    OpenAIRE

    Ovchinnikov, Yurii; Kresin, Vladimir

    2010-01-01

    Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.

  16. About tunnelling times

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.

    1991-08-01

    In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

  17. FY 1999 report on the research and development project of industrial scientific technology - quantum functional devices. Systematical arrangement of the development technology (FY 1991 - 1999); 1999 nendo ryoshika kino soshi no kenkyu kaihatsu. Kaihatsu sareta gijutsu no keitoteki seiri (1991 nendo kara 1999 nendo)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The FY 1991 to 1999 R and D results of quantum functional devices are systematically summarized. The basic action of the MIM-based single electron tunneling devices is succeeded for the first time in the world. The quantum fine-wire device transistor is realized. The surface tunnel transistor is proposed, application to action demonstration and memories is suggested, and possibility of applicability to multi-value logic circuits is suggested. The multi-emitter RHET is developed to have one device provided with memory and multi-input logic functions, and increase integration 10 times. The TSR quantum dot HEMT memory is developed on a trial basis, to demonstrate 150 K action. The principle of a tera-bit class high-capacity memory is demonstrated using the InAs dot memory. Integration of the quantum band-bonded multi-functional device is described. Possibility is demonstrated for the Si insulation film tunnel device multi-value memory, working on the principle of tunneling between bands via the Si insulation film. The integrated quantum dot functional memory and polariton switch are also described. The single electron logic circuit works for the first time in the world. The integrated CMOS/SET device, which uses high driving force of CMOS, is proposed. (NEDO)

  18. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  19. Integrated microfluidic devices for the synthesis of nanoscale liposomes and lipoplexes.

    Science.gov (United States)

    Balbino, Tiago A; Serafin, Juliana M; Radaic, Allan; de Jesus, Marcelo B; de la Torre, Lucimara G

    2017-04-01

    In this work, pDNA/cationic liposome (CL) lipoplexes for gene delivery were prepared in one-step using multiple hydrodynamic flow-focusing regions. The microfluidic platform was designed with two distinct regions for the synthesis of liposomes and the subsequent assembly with pDNA, forming lipoplexes. The obtained lipoplexes exhibited appropriate physicochemical characteristics for gene therapy applications under varying conditions of flow rate-ratio (FRR), total volumetric flow rate (Q T ) and pDNA content (molar charge ratio, R±). The CLs were able to condense and retain the pDNA in the vesicular structures with sizes ranging from 140nm to 250nm. In vitro transfection assays showed that the lipoplexes prepared in one step by the two-stage configuration achieved similar efficiencies as lipoplexes prepared by conventional bulk processes, in which each step comprises a series of manual operations. The integrated microfluidic platform generates lipoplexes with liposome formation combined in-line with lipoplex assembly, significantly reducing the number of steps usually required to form gene carrier systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...