Solid-State Quantum Computer Based on Scanning Tunneling Microscopy

International Nuclear Information System (INIS)

Berman, G. P.; Brown, G. W.; Hawley, M. E.; Tsifrinovich, V. I.

2001-01-01

We propose a solid-state nuclear-spin quantum computer based on application of scanning tunneling microscopy (STM) and well-developed silicon technology. It requires the measurement of tunneling-current modulation caused by the Larmor precession of a single electron spin. Our envisioned STM quantum computer would operate at the high magnetic field (∼10 T) and at low temperature ∼1 K

For seeing atoms: tunnel effect microscopy

International Nuclear Information System (INIS)

Stoll, E.; Humbert, A.

1985-01-01

A new technique, Scanning Tunneling Microscopy (STM) is described, which allows surface detail to be resolved at atomic level. The principles are described, together with an account of a recent experiment; various theoretical considerations are examined. Samples of recorded topographies are depicted and analysed. It is concluded that the technique is of value for chemical studies of surfaces on an atomic scale. (D.A.J.)

Surface physics studied by means of scanning tunneling microscopy

International Nuclear Information System (INIS)

Besenbacher, F.; Laegsgaard, E.; Stensgaard, I.

1993-01-01

Scanning tunneling microscopy has been applied to study silicon crystal structures, oxygen on Cu (110), and real industrial catalyst surfaces. For the latter purpose an Atomic Force Microscope is being developed. (EG)

Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

International Nuclear Information System (INIS)

Ye Gangfeng; Nogami, Jun; Crimp, Martin A.

2006-01-01

The microstructure of self-assembled dysprosium silicide nanostructures on silicon(001) has been studied by scanning tunneling microscopy and transmission electron microscopy. The studies focused on nanostructures that involve multiple atomic layers of the silicide. Cross-sectional high resolution transmission electron microscopy images and fast Fourier transform analysis showed that both hexagonal and orthorhombic/tetragonal silicide phases were present. Both the magnitude and the anisotropy of lattice mismatch between the silicide and the substrate play roles in the morphology and epitaxial growth of the nanostructures formed

Scanning tunneling microscopy III theory of STM and related scanning probe methods

CERN Document Server

Güntherodt, Hans-Joachim

1996-01-01

Scanning Tunneling Microscopy III provides a unique introduction to the theoretical foundations of scanning tunneling microscopy and related scanning probe methods. The different theoretical concepts developed in the past are outlined, and the implications of the theoretical results for the interpretation of experimental data are discussed in detail. Therefore, this book serves as a most useful guide for experimentalists as well as for theoreticians working in the filed of local probe methods. In this second edition the text has been updated and new methods are discussed.

Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

2005-02-01

The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, Lars [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); TOTAL Marketing Services, New Energies, La Défense 10, 92069 Paris La Défense Cedex (France); Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schofield, Steven R. [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom); Curson, Neil J., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE (United Kingdom)

2014-06-23

We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

International Nuclear Information System (INIS)

Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y.; Schofield, Steven R.; Curson, Neil J.

2014-01-01

We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

Photothermal modulation of the gap distance in scanning tunneling microscopy

International Nuclear Information System (INIS)

Amer, N.M.; Skumanich, A.; Ripple, D.

1986-01-01

We have employed the photothermal effect to modulate the gap distance in a tunneling microscope. In this approach, optical heating induces the expansion and buckling of laser-illuminated sample surface. The surface displacement can be modulated over a wide frequency range, and its height (typically <1 A-circle) can be varied by changing the illumination intensity and modulation frequency. This novel method provides an alternative means for performing tunneling spectroscopy and microscopy, and for determining work functions of materials

Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications

International Nuclear Information System (INIS)

Morawski, Ireneusz; Spiegelberg, Richard; Korte, Stefan; Voigtländer, Bert

2015-01-01

A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations

Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications

Energy Technology Data Exchange (ETDEWEB)

Morawski, Ireneusz [Peter Grünberg Institut (PGI-3) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich (Germany); Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław (Poland); Spiegelberg, Richard; Korte, Stefan; Voigtländer, Bert [Peter Grünberg Institut (PGI-3) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich (Germany)

2015-12-15

A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations.

Infrared spectroscopy of molecular submonolayers on surfaces by infrared scanning tunneling microscopy: tetramantane on Au111.

Science.gov (United States)

Pechenezhskiy, Ivan V; Hong, Xiaoping; Nguyen, Giang D; Dahl, Jeremy E P; Carlson, Robert M K; Wang, Feng; Crommie, Michael F

2013-09-20

We have developed a new scanning-tunneling-microscopy-based spectroscopy technique to characterize infrared (IR) absorption of submonolayers of molecules on conducting crystals. The technique employs a scanning tunneling microscope as a precise detector to measure the expansion of a molecule-decorated crystal that is irradiated by IR light from a tunable laser source. Using this technique, we obtain the IR absorption spectra of [121]tetramantane and [123]tetramantane on Au(111). Significant differences between the IR spectra for these two isomers show the power of this new technique to differentiate chemical structures even when single-molecule-resolved scanning tunneling microscopy (STM) images look quite similar. Furthermore, the new technique was found to yield significantly better spectral resolution than STM-based inelastic electron tunneling spectroscopy, and to allow determination of optical absorption cross sections. Compared to IR spectroscopy of bulk tetramantane powders, infrared scanning tunneling microscopy (IRSTM) spectra reveal narrower and blueshifted vibrational peaks for an ordered tetramantane adlayer. Differences between bulk and surface tetramantane vibrational spectra are explained via molecule-molecule interactions.

Tetrairon(III) Single Molecule Magnet Studied by Scanning Tunneling Microscopy and Spectroscopy

Science.gov (United States)

Oh, Youngtek; Jeong, Hogyun; Lee, Minjun; Kwon, Jeonghoon; Yu, Jaejun; Mamun, Shariful Islam; Gupta, Gajendra; Kim, Jinkwon; Kuk, Young

2011-03-01

Tetrairon(III) single-molecule magnet (SMM) on a clean Au(111) has studied using scanning tunneling microscopy (STM) and spectroscopy (STS) to understand quantum mechanical tunneling of magnetization and hysteresis of pure molecular origin. Before the STM studies, elemental analysis, proton nuclear magnetic resonance (NMR) measurement and Energy Dispersive X- ray Spectroscopy (EDS) were carried out to check the robustness of the sample. The STM image of this molecule shows a hexagonal shape, with a phenyl ring at the center and surrounding six dipivaloylmethane ligands. Two peaks are observed at 0.5 eV, 1.5 eV in the STS results, agreeing well with the first principles calculations. Spin-polarized scanning tunneling microscopy (SPSTM) measurements have been performed with a magnetic tip to get the magnetization image of the SMM. We could observe the antiferromagnetic coupling and a centered- triangular topology with six alkoxo bridges inside the molecule while applying external magnetic fields.

Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, R.; Williams, C. C., E-mail: clayton@physics.utah.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112 (United States)

2015-09-15

Dynamic tunneling force microscopy (DTFM) is a scanning probe technique for real space mapping and characterization of individual electronic trap states in non-conductive films with atomic scale spatial resolution. The method is based upon the quantum mechanical tunneling of a single electron back and forth between a metallic atomic force microscopy tip and individual trap states in completely non-conducting surface. This single electron shuttling is measured by detecting the electrostatic force induced on the probe tip at the shuttling frequency. In this paper, the physical basis for the DTFM method is unfolded through a physical model and a derivation of the dynamic tunneling signal as a function of several experimental parameters is shown. Experimental data are compared with the theoretical simulations, showing quantitative consistency and verifying the physical model used. The experimental system is described and representative imaging results are shown.

Imaging by Electrochemical Scanning Tunneling Microscopy and Deconvolution Resolving More Details of Surfaces Nanomorphology

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov

observed in high-resolution images of metallic nanocrystallites may be effectively deconvoluted, as to resolve more details of the crystalline morphology (see figure). Images of surface-crystalline metals indicate that more than a single atomic layer is involved in mediating the tunneling current......Upon imaging, electrochemical scanning tunneling microscopy (ESTM), scanning electrochemical micro-scopy (SECM) and in situ STM resolve information on electronic structures and on surface topography. At very high resolution, imaging processing is required, as to obtain information that relates...... to crystallographic-surface structures. Within the wide range of new technologies, those images surface features, the electrochemical scanning tunneling microscope (ESTM) provides means of atomic resolution where the tip participates actively in the process of imaging. Two metallic surfaces influence ions trapped...

Scanning tunneling microscopy studies of thin foil x-ray mirrors

DEFF Research Database (Denmark)

Christensen, Finn Erland; Besenbacher, Flemming; Garnaes, Jorgen

1990-01-01

In this paper scanning tunneling microscopy (STM) measurements of x-ray mirrors are presented. The x-ray mirrors are 0.3 mm thick dip-lacquered aluminum foils coated with gold by evaporation, as well as state-of-the-art polished surfaces coated with gold, platinum, or iridium. The measurements...

Scanning tunneling microscopy

International Nuclear Information System (INIS)

Binnig, G.; Rohrer, H.

1983-01-01

Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

OpenAIRE

Weimer, M.; Kramar, J.; Bai, C.; Baldeschwieler, J. D.

1988-01-01

Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-MoS2. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.

Large hadron collider in the LEP tunnel. Proceedings. Vol. 2

International Nuclear Information System (INIS)

1984-01-01

A Workshop, jointly organized by ECFA and CERN, took place at Lausanne and at CERN in March 1984 to study various options for a pp (or panti p) collider which might be installed at a later data alongside LEP in the LEP tunnel. Following the exploration of e + e - physics up to the highest energy now foreseeable, this would open up the opportunity to investigate hadron collisions in the new energy range of 10 to 20 TeV in the centre of mass. These proceedings put together the documents prepared in connection with this Workshop. They cover possible options for a Large Hadron Collider (LHC) in the LEP tunnel, the physics case as it stands at present, and studies of experimental possibilities in this energy range with luminosities as now considered. See hints under the relevant topics. (orig./HSI)

Large hadron collider in the LEP tunnel. Proceedings. Vol. 1

International Nuclear Information System (INIS)

1984-01-01

A Workshop, jointly organized by ECFA and CERN, took place at Lausanne and at CERN in March 1984 to study various options for a pp (or panti p) collider which might be installed at a later date alongside LEP in the LEP tunnel. Following the exploration of e + e - physics up to the highest energy now foreseeable, this would open up the opportunity to investigate hadron collisions in the new energy range of 10 to 20 TeV in the centre of mass. These proceedings put together the documents prepared in connection with this Workshop. They cover possible options for a Large Hadron Collider (LHC= in the LEP tunnel, the physics case at it stands at present, and studies of experimental possibilities in this energy range with luminosities as now considered. See hints under the relevant topics. (orig.)

Scanning tunneling microscopy II further applications and related scanning techniques

CERN Document Server

Güntherodt, Hans-Joachim

1992-01-01

Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in Vol. I, these sudies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described inchapters on scanning force microscopy, magnetic force microscopy, scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Togehter, the two volumes give a comprehensive account of experimental aspcets of STM. They provide essentialreading and reference material for all students and researchers involvedin this field.

Scanning tunneling microscopy I general principles and applications to clean and adsorbate-covered surfaces

CERN Document Server

Wiesendanger, Roland

1992-01-01

Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Science.gov (United States)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Covalently Immobilised Cytochrome C Imaged by In Situ Scanning Tunnelling Microscopy

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov; Olesen, Klaus G.; Danilov, Alexey I.

1997-01-01

In situ scanning tunnelling microscopy (STM) imaging of cytochrome c (cyt c) on polycrystalline Pt surfaces and on Au(lll) was achieved first by covalent immobilisation of 3-aminopropyltriethoxysilane (3-APTS) brought to react with oxide present on the Pt surfaces. Covalently bound 3-APTS forms...

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Directory of Open Access Journals (Sweden)

Ting Xie

2018-05-01

Full Text Available Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

International Nuclear Information System (INIS)

Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

2016-01-01

The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

From Graphite to Graphene via Scanning Tunneling Microscopy

Science.gov (United States)

Qi, Dejun

The primary objective of this dissertation is to study both graphene on graphite and pristine freestanding grapheme using scanning tunneling microscopy (STM) and density functional theory (DFT) simulation technique. In the experiment part, good quality tungsten metalic tips for experiment were fabricated using our newly developed tip making setup. Then a series of measurements using a technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) of our own development were performed on a highly oriented pyrolytic graphite (HOPG) surface. The electrostatic interaction between the STM tip and the sample can be tuned to produce both reversible and irreversible large-scale movement of the graphite surface. Under this influence, atomic-resolution STM images reveal that a continuous electronic transition between two distinct patterns can be systematically controlled. DFT calculations reveal that this transition can be related to vertical displacements of the top layer of graphite relative to the bulk. Evidence for horizontal shifts in the top layer of graphite is also presented. Excellent agreement is found between experimental STM images and those simulated using DFT. In addition, the EM-STM technique was also used to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force.

Supramolecular chemistry at the liquid/solid interface probed by scanning tunnelling microscopy

NARCIS (Netherlands)

Feyter, S. De; Uji-i, H.; Mamdouh, W.; Miura, A.; Zhang, J.; Jonkheijm, P.; Schenning, A.P.H.J.; Meijer, E.W.; Chen, Z.; Wurthner, F.; Schuurmans, N.; Esch, J. van; Feringa, B.L.; Dulcey, A.E.; Percec, V.; Schryver, F.C. De

2006-01-01

The liquid/solid interface provides an ideal environment to investigate self-assembly phenomena, and scanning tunnelling microscopy (STM) is one of the preferred methodologies to probe the structure and the properties of physisorbed monolayers on the nanoscale. Physisorbed monolayers are of

Scanning tunnel microscopy of semiconductor nanostructures

International Nuclear Information System (INIS)

Eder, C.

1997-09-01

In this work a scanning tunneling microscope (STM) is utilized as a surface sensitive tool for local characterization of internal potential profiles of GaAs/AlGaAs heterostructures. The STM is operated at variable temperatures under ambient conditions, i.e. either in air or in the variable temperature insert of a cryostat. Distinct local differences between current-voltage curves taken on inverted heterostructures, which were patterned by wet chemically etching, are found. The spectroscopic differences can be ascribed to the internal potential profile in the subsurface regions of the sample. Current imaging tunneling spectroscopy (CITS) is applied to study quantum wire regions. It is found that the magnitude of the CITS-current is an indirect measure of edge depletion zones, which are much larger at 4.2 K. Direct measurements of relevant energy levels in quantum structures were obtained by ballistic electron emission microscopy (BEEM). It is shown that this 3-terminal technique is an excellent tool for transport characterization of minibands formed in semiconductor superlattices. Furthermore, low dimensional electron gases are shown to act as very efficient collector electrodes at low temperatures. For the first time, BEEM experiments were performed at 4.2 K. The enhanced thermal resolution at 4.2 K allows an analysis of the relevant scattering processes. It is found that the collector current is strongly influenced by diffusive scattering at the metal/semiconductor interface. (author)

Topographic and electronic contrast of the graphene moir´e on Ir(111) probed by scanning tunneling microscopy and noncontact atomic force microscopy

NARCIS (Netherlands)

Sun, Z.; Hämäläinen, K.; Sainio, K.; Lahtinen, J.; Vanmaekelbergh, D.A.M.; Liljeroth, P.

2011-01-01

Epitaxial graphene grown on transition-metal surfaces typically exhibits a moir´e pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) to probe the electronic and topographic contrast

Concept for room temperature single-spin tunneling force microscopy with atomic spatial resolution

Science.gov (United States)

Payne, Adam

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy (AFM) system noise. The results show that the approach could provide single-spin measurement of electrically isolated defect states with atomic spatial resolution at room temperature.

Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

Science.gov (United States)

Payne, A.; Ambal, K.; Boehme, C.; Williams, C. C.

2015-05-01

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy system noise. The results show that the approach could provide single-spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

Frequency shift, damping, and tunneling current coupling with quartz tuning forks in noncontact atomic force microscopy

Science.gov (United States)

Nony, Laurent; Bocquet, Franck; Para, Franck; Loppacher, Christian

2016-09-01

A combined experimental and theoretical approach to the coupling between frequency-shift (Δ f ) , damping, and tunneling current (It) in combined noncontact atomic force microscopy/scanning tunneling microscopy using quartz tuning forks (QTF)-based probes is reported. When brought into oscillating tunneling conditions, the tip located at the QTF prong's end radiates an electromagnetic field which couples to the QTF prong motion via its piezoelectric tensor and loads its electrodes by induction. Our approach explains how those It-related effects ultimately modify the Δ f and the damping measurements. This paradigm to the origin of the coupling between It and the nc-AFM regular signals relies on both the intrinsic piezoelectric nature of the quartz constituting the QTF and its electrodes design.

Preparation of Chemically Etched Tips for Ambient Instructional Scanning Tunneling Microscopy

Science.gov (United States)

Zaccardi, Margot J.; Winkelmann, Kurt; Olson, Joel A.

2010-01-01

A first-year laboratory experiment that utilizes concepts of electrochemical tip etching for scanning tunneling microscopy (STM) is described. This experiment can be used in conjunction with any STM experiment. Students electrochemically etch gold STM tips using a time-efficient method, which can then be used in an instructional grade STM that…

Single-step electrochemical method for producing very sharp Au scanning tunneling microscopy tips

International Nuclear Information System (INIS)

Gingery, David; Buehlmann, Philippe

2007-01-01

A single-step electrochemical method for making sharp gold scanning tunneling microscopy tips is described. 3.0M NaCl in 1% perchloric acid is compared to several previously reported etchants. The addition of perchloric acid to sodium chloride solutions drastically shortens etching times and is shown by transmission electron microscopy to produce very sharp tips with a mean radius of curvature of 15 nm

Atomic-scale structure of dislocations revealed by scanning tunneling microscopy and molecular dynamics

DEFF Research Database (Denmark)

Christiansen, Jesper; Morgenstern, K.; Schiøtz, Jakob

2002-01-01

The intersection between dislocations and a Ag(111) surface has been studied using an interplay of scanning tunneling microscopy (STM) and molecular dynamics. Whereas the STM provides atomically resolved information about the surface structure and Burgers vectors of the dislocations, the simulati......The intersection between dislocations and a Ag(111) surface has been studied using an interplay of scanning tunneling microscopy (STM) and molecular dynamics. Whereas the STM provides atomically resolved information about the surface structure and Burgers vectors of the dislocations......, the simulations can be used to determine dislocation structure and orientation in the near-surface region. In a similar way, the subsurface structure of other extended defects can be studied. The simulations show dislocations to reorient the partials in the surface region leading to an increased splitting width...

Scanning tunneling microscopy II further applications and related scanning techniques

CERN Document Server

Güntherodt, Hans-Joachim

1995-01-01

Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in STM I, these studies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described in chapters on scanning force microscopy, magnetic force microscopy, and scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Together, the two volumes give a comprehensive account of experimental aspects of STM. They provide essential reading and reference material for all students and researchers involved in this field. In this second edition the text has been updated and new methods are discussed.

Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces

International Nuclear Information System (INIS)

Krueger, David

2009-01-01

Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

Spectroscopy of surface adsorbed molecules (scanning tunneling microscopy). Progress report, May 1, 1985-April 30, 1986

International Nuclear Information System (INIS)

Coleman, R.V.

1986-01-01

A review of the scanning tunneling microscopy program is given. This article contains a description of the design and fabrication of the microscope in addition to description of studies which use the microscope: studies of charge-density waves and studies of tunnel junctions doped with metals and semiconductors. 48 refs., 26 figs

Scanning tunneling microscopy and spectroscopy studies of graphite edges

International Nuclear Information System (INIS)

Niimi, Y.; Matsui, T.; Kambara, H.; Tagami, K.; Tsukada, M.; Fukuyama, Hiroshi

2005-01-01

We studied experimentally and theoretically the electronic local density of states (LDOS) near single-step edges at the surface of exfoliated graphite. In scanning tunneling microscopy measurements, we observed the (3x3)R30 o and honeycomb superstructures extending over 3-4-bar nm both from the zigzag and armchair edges. Calculations based on a density-functional-derived non-orthogonal tight-binding model show that these superstructures can coexist if the two types of edges admix each other in real graphite step edges. Scanning tunneling spectroscopy measurements near the zigzag edge reveal a clear peak in the LDOS at an energy below the Fermi energy by 20-bar meV. No such a peak was observed near the armchair edge. We concluded that this peak corresponds to the 'edge state' theoretically predicted for graphene ribbons, since a similar prominent LDOS peak due to the edge state is obtained by the first principles calculations

Scanning tunneling microscopy - STM: history, principle, construction, and related techniques

International Nuclear Information System (INIS)

Ostadal, I.; Sobotik, P.

1998-01-01

The method of scanning tunneling microscopy (STM) is discussed. The principle of STM and some other related methods is highlighted, and spectroscopy using STM is dealt with. A brief summary is given of problems to be solved in microscope design, and the influence of these on the resolution obtained is presented. A comparison of STM with other methods used at present in the physics of thin films and surfaces confirms its irreplaceability

Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment.

Science.gov (United States)

Mom, Rik V; Onderwaater, Willem G; Rost, Marcel J; Jankowski, Maciej; Wenzel, Sabine; Jacobse, Leon; Alkemade, Paul F A; Vandalon, Vincent; van Spronsen, Matthijs A; van Weeren, Matthijs; Crama, Bert; van der Tuijn, Peter; Felici, Roberto; Kessels, Wilhelmus M M; Carlà, Francesco; Frenken, Joost W M; Groot, Irene M N

2017-11-01

A combined X-ray and scanning tunneling microscopy (STM) instrument is presented that enables the local detection of X-ray absorption on surfaces in a gas environment. To suppress the collection of ion currents generated in the gas phase, coaxially shielded STM tips were used. The conductive outer shield of the coaxial tips can be biased to deflect ions away from the tip core. When tunneling, the X-ray-induced current is separated from the regular, 'topographic' tunneling current using a novel high-speed separation scheme. We demonstrate the capabilities of the instrument by measuring the local X-ray-induced current on Au(1 1 1) in 800 mbar Ar. Copyright © 2017 Elsevier B.V. All rights reserved.

13th Australian tunnelling conference. Proceedings

Energy Technology Data Exchange (ETDEWEB)

NONE

2008-07-01

The theme of the conference was 'Engineering in a changing environment'. Topics covered include Australian tunnelling projects, design and development of ground support, tunnelling, international projects, fire and life safety, mining projects, risk management in tunnelling, and tunnel boring machine tunnelling. Papers of particular interest to the coal industry are: improving roadway development in underground coal mine (G. Lewis and G. Gibson), and polymer-based alternative to steel mesh for coal mine strata reinforcement (C. Lukey and others).

Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

International Nuclear Information System (INIS)

Galloway, H.C.

1995-12-01

Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

Scanning tunneling microscopy on iron-chalcogenide superconductor Fe(Se, Te) single crystal

International Nuclear Information System (INIS)

Ukita, R.; Sugimoto, A.; Ekino, T.

2011-01-01

We show scanning tunneling microscopy/spectroscopy (STM/STS) results of Fe(Se, Te). STM topography shows square arrangements of spots with the lattice spacing 0.37 nm. Te and Se atoms are randomly distributed in the STM topography. The STM topography of FeTe exhibits clusters of separated iron atoms. We have investigated the iron-chalcogenide superconductor Fe(Se, Te) using a low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) technique. STM topography at 4.9 K shows clear regular square arrangements of spots with the lattice spacing ∼0.37 nm, from which what we observe are attributed to Se or Te atomic plane. In the topography, brighter and darker atomic spots are randomly distributed, which are most probably due to Te and Se atoms, respectively. For the FeTe compound, the topography exhibits clusters of the bright spots probably arising from separated iron atoms distributing over several Te lattice sites. The STS measurements clarify the existence of the large-size gap with 2Δ = 0.4-0.6 eV.

Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

International Nuclear Information System (INIS)

Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

2000-01-01

Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment

NARCIS (Netherlands)

Mom, R.V.; Onderwaater, W.G.; Rost, M.J.; Jankowski, M.; Wenzel, S.; Jacobse, L.; Alkemade, P.F.A.; Vandalon, V.; van Spronsen, M.A.; van Weeren, M.; Crama, B.; van der Tuijn, P.; Felici, R.; Kessels, W.M.M.; Carlà, F.; Frenken, J.W.M.; Groot, I.M.N.

2017-01-01

A combined X-ray and scanning tunneling microscopy (STM) instrument is presented that enables the local detection of X-ray absorption on surfaces in a gas environment. To suppress the collection of ion currents generated in the gas phase, coaxially shielded STM tips were used. The conductive outer

Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

OpenAIRE

Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

1995-01-01

By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

Molecular tips for scanning tunneling microscopy: intermolecular electron tunneling for single-molecule recognition and electronics.

Science.gov (United States)

Nishino, Tomoaki

2014-01-01

This paper reviews the development of molecular tips for scanning tunneling microscopy (STM). Molecular tips offer many advantages: first is their ability to perform chemically selective imaging because of chemical interactions between the sample and the molecular tip, thus improving a major drawback of conventional STM. Rational design of the molecular tip allows sophisticated chemical recognition; e.g., chiral recognition and selective visualization of atomic defects in carbon nanotubes. Another advantage is that they provide a unique method to quantify electron transfer between single molecules. Understanding such electron transfer is mandatory for the realization of molecular electronics.

Dynamics of decanethiol self-assembled monolayers on Au(111) studied by Scanning tunnelling microscopy

NARCIS (Netherlands)

Wu, Hairong; Sotthewes, Kai; Kumar, Avijit; Vancso, Gyula J.; Schön, Peter Manfred; Zandvliet, Henricus J.W.

2013-01-01

We investigated the dynamics of decanethiol self-assembled monolayers on Au(111) surfaces using time-resolved scanning tunneling microscopy at room temperature. The expected ordered phases (β, δ, χ*, and ) and a disordered phase (ε) were observed. Current–time traces with the feedback loop disabled

EDITORIAL: Three decades of scanning tunnelling microscopy that changed the course of surface science Three decades of scanning tunnelling microscopy that changed the course of surface science

Science.gov (United States)

Ramachandra Rao, M. S.; Margaritondo, Giorgio

2011-11-01

Three decades ago, with a tiny tip of platinum, the scientific world saw the real space imaging of single atoms with unprecedented spatial resolution. This signalled the birth of one of the most versatile surface probes, based on the physics of quantum mechanical tunnelling: the scanning tunnelling microscope (STM). Invented in 1981 by Gerd Binnig and Heinrich Rohrer of IBM, Zurich, it led to their award of the 1986 Nobel Prize. Atoms, once speculated to be abstract entities used by theoreticians for mere calculations, can be seen to exist for real with the nano-eye of an STM tip that also gives real-space images of molecules and adsorbed complexes on surfaces. From a very fundamental perspective, the STM changed the course of surface science and engineering. STM also emerged as a powerful tool to study various fundamental phenomena relevant to the properties of surfaces in technological applications such as tribology, medical implants, catalysis, sensors and biology—besides elucidating the importance of local bonding geometries and defects, non-periodic structures and the co-existence of nano-scale phases. Atom-level probing, once considered a dream, has seen the light with the evolution of STM. An important off-shoot of STM was the atomic force microscope (AFM) for surface mapping of insulating samples. Then followed the development of a flurry of techniques under the general name of scanning probe microscopy (SPM). These techniques (STM, AFM, MFM, PFM etc) designed for atomic-scale-resolution imaging and spectroscopy, have led to brand new developments in surface analysis. All of these novel methods enabled researchers in recent years to image and analyse complex surfaces on microscopic and nanoscopic scales. All of them utilize a small probe for sensing the surface. The invention of AFM by Gerd Binnig, Calvin Quate and Christopher Gerber opened up new opportunities for characterization of a variety of materials, and various industrial applications could be

Surface x-ray scattering and scanning tunneling microscopy studies at the Au(111) electrode

International Nuclear Information System (INIS)

Ocko, B.M.; Magnussen, O.M.; Wang, J.X.; Adzic, R.R.

1993-01-01

This chapter reviews Surface X-ray Scattering and Scanning Tunneling Microscopy results carried out at the Au(111) surface under electrochemical conditions. Results are presented for the reconstructed surface, and for bromide and thallium monolayers. These examples are used to illustrate the complementary nature of the techniques

Energy gap and surface structure of superconducting diamond films probed by scanning tunneling microscopy

International Nuclear Information System (INIS)

Nishizaki, Terukazu; Takano, Yoshihiko; Nagao, Masanori; Takenouchi, Tomohiro; Kawarada, Hiroshi; Kobayashi, Norio

2007-01-01

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond at T = 0.47 K. The STM topography shows two kinds of atomic structures: a hydrogenated 1 x 1 structure, C(1 1 1)1 x 1:H, and an amorphous structure. On the C(1 1 1)1 x 1:H region, the tunneling spectra show superconducting property with the energy gap Δ = 0.83 meV. The obtained gap ratio 2Δ/k B T c = 3.57 is consistent with the weak-coupling BCS theory

Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2014-11-03

Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

Adsorption of Cu phthalocyanine on Pt modified Ge(001): A scanning tunneling microscopy study

NARCIS (Netherlands)

Saedi, A.; Berkelaar, Robin P.; Kumar, Avijit; Poelsema, Bene; Zandvliet, Henricus J.W.

2010-01-01

The adsorption configurations of copper phthalocyanine (CuPc) molecules on platinum-modified Ge(001) have been studied using scanning tunneling microscopy. After deposition at room temperature and cooling down to 77 K the CuPc molecules are still dynamic. However, after annealing at 550±50 K, the

Simultaneously measured signals in scanning probe microscopy with a needle sensor: frequency shift and tunneling current.

Science.gov (United States)

Morawski, Ireneusz; Voigtländer, Bert

2010-03-01

We present combined noncontact scanning force microscopy and tunneling current images of a platinum(111) surface obtained by means of a 1 MHz quartz needle sensor. The low-frequency circuit of the tunneling current was combined with a high-frequency signal of the quartz resonator enabling full electrical operation of the sensor. The frequency shift and the tunneling current were detected simultaneously, while the feedback control loop of the topography signal was fed using one of them. In both cases, the free signal that was not connected to the feedback loop reveals proportional-integral controller errorlike behavior, which is governed by the time derivative of the topography signal. A procedure is proposed for determining the mechanical oscillation amplitude by utilizing the tunneling current also including the average tip-sample work function.

Ultrafast photoinduced carrier dynamics in GaNAs probed using femtosecond time-resolved scanning tunnelling microscopy

International Nuclear Information System (INIS)

Terada, Yasuhiko; Aoyama, Masahiro; Kondo, Hiroyuki; Taninaka, Atsushi; Takeuchi, Osamu; Shigekawa, Hidemi

2007-01-01

The combination of scanning tunnelling microscopy (STM) with optical excitation using ultrashort laser pulses enables us, in principle, to simultaneously obtain ultimate spatial and temporal resolutions. We have developed the shaken-pulse-pair-excited STM (SPPX-STM) and succeeded in detecting a weak time-resolved tunnelling current signal from a low-temperature-grown GaNAs sample. To clarify the underlying physics in SPPX-STM measurements, we performed optical pump-probe reflectivity measurements with a wavelength-changeable ultrashort-pulse laser. By comparing the results obtained from the two methods with an analysis based on the nonlinear relationship between the photocarrier density and tunnelling current, we obtained a comprehensive explanation that the photocarrier dynamics is reflected in the SPPX-STM signal through the surface photovoltage effect

In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

DEFF Research Database (Denmark)

Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

2003-01-01

Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

Atomic resolution scanning tunneling microscopy in a cryogen free dilution refrigerator at 15 mK

International Nuclear Information System (INIS)

Haan, A. M. J. den; Wijts, G. H. C. J.; Galli, F.; Oosterkamp, T. H.; Usenko, O.; Baarle, G. J. C. van; Zalm, D. J. van der

2014-01-01

Pulse tube refrigerators are becoming more common, because they are cost efficient and demand less handling than conventional (wet) refrigerators. However, a downside of a pulse tube system is the vibration level at the cold-head, which is in most designs several micrometers. We implemented vibration isolation techniques which significantly reduced vibration levels at the experiment. These optimizations were necessary for the vibration sensitive magnetic resonance force microscopy experiments at milli-kelvin temperatures for which the cryostat is intended. With these modifications we show atomic resolution scanning tunneling microscopy on graphite. This is promising for scanning probe microscopy applications at very low temperatures

Probing Single Nanometer-scale Particles with Scanning Tunneling Microscopy and Spectroscopies

International Nuclear Information System (INIS)

McCarty, G.S.; Love, J.C.; Kushmerick, J.G.; Charles, L.F.; Keating, C.D.; Toleno, B.J.; Lyn, M.E.; Castleman, A.W.; Natan, M.J.; Weiss, P.S.

1999-01-01

Scanning tunneling microscopy can be used to isolate single particles on surfaces for further study. Local optical and electronic properties coupled with topographic information collected by the scanning tunneling microscope (STM) give insight into the intrinsic properties of the species under study. Since each spectroscopic measurement is done on a single particle, each sample is 'monodisperse', regardless of the degree of heterogeneity of the original preparation. We illustrate this with three example systems - a metal cluster of known atomic structure, metal nanoparticles dispersed from colloid suspensions, and metallocarbohedrenes (Met-Cars) deposited with other reaction products. Au and Ag nanoparticles were imaged using a photon emission STM. The threshold voltage, the lowest bias voltage at which photons are produced, was determined for Au nanoparticles. Electronic spectra of small clusters of Ni atoms on MoS 2 were recorded. Preliminary images of Zr-based Met-Car-containing soot were obtained on Au and MoS 2 substrates and partial electronic spectra were recorded of these possible Met-Car particles

Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

NARCIS (Netherlands)

Vera Marun, I.J.

2010-01-01

This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

Scanning Tunneling Microscopy Analysis of a Pentacene/Graphene/SiC(0001) system

Science.gov (United States)

Yost, Andrew; Suzer, Ozgun; Smerdon, Joseph; Chien, Teyu; Guest, Jeffrey

2014-03-01

A complete understanding of the structure of molecular assemblies, as well as an understanding of donor-acceptor interactions is crucial in the development of emergent molecular electronics technologies such as organic photovoltaics. The pentacene (C22H14) is a good electron donor in Pentacene-C60 system, which is a model system of an organic photovoltaic cell.. Here we present scanning tunneling microscopy studies of the pentacene(Pn) molecule on Graphene(G) that is epitaxially grown on SiC(0001). In addition to the morphologies reported in literature, several new structures of Pn on on G/SiC(0001) were observed with different periodicity and registry both in monolayer and bilayer coverages of molecules on the surface. Preliminary scanning tunneling spectroscopy of the molecular system is also discussed; well-isolated states and a large HOMO-LUMO gap indicate the Pn is weakly coupled to the grapheme and underlying substrate.

Epitaxial clusters studied by synchrotron x-ray diffraction and scanning tunneling microscopy

DEFF Research Database (Denmark)

Nielsen, M.; Feidenhans'l, R.; Rasmussen, F.B.

1998-01-01

Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattice parameter of the substrate and the adsorbate stimulates the formation of regular clusters with a characteristic size. The well-known "hut-clusters" formed during the growth of Ge on Si(001) are a...... similar to the "hut clusters". We demonstrate that X-ray diffraction in combination with scanning tunneling microscopy can be used to determine the fundamental properties of such clusters. (C) 1998 Elsevier Science B.V. All rights reserved....

First-principles modelling of scanning tunneling microscopy using non-equilibrium Green's functions

DEFF Research Database (Denmark)

Lin, H.P.; Rauba, J.M.C.; Thygesen, Kristian Sommer

2010-01-01

The investigation of electron transport processes in nano-scale architectures plays a crucial role in the development of surface chemistry and nano-technology. Experimentally, an important driving force within this research area has been the concurrent refinements of scanning tunneling microscopy...... into account. As an illustrating example we apply the NEGF-STM method to the Si(001)(2x1):H surface with sub-surface P doping and discuss the results in comparison to the Bardeen and Tersoff-Hamann methods....

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Cytochrome C Dynamics at Gold and Glassy Carbon Surfaces Monitored by in Situ Scanning Tunnel Microscopy

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov; Møller, Per; Pedersen, Marianne Vind

1995-01-01

We have investigated the absorption of cytochrome c on gold and glassy carbon substrates by in situ scanning tunnel microscopy under potentiostatic control of both substrate and tip. Low ionic strength and potential ranges where no Faradaic current flows were used. Cyt c aggregates into flat...

In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

DEFF Research Database (Denmark)

Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

2003-01-01

Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... a broad tunnelling current-overpotential range at a constant (large) bias voltage of +0.2 V. The current is found to be constant over a 0.25 V overpotential range, which covers roughly the range where the oxidised and reduced redox levels are located within the energy tip. STM contrast and apparent...... of previous theoretical work on in situ STM of redox molecules, to large bias voltages, \\eV(bias)\\ > E-r. Large bias voltages give tunnelling contrasts independent of the overpotential over a broad range, as both the oxidised and reduced redox levels are located within the 'energy tip' between the substrate...

Nano-contact microscopy of supracrystals

Directory of Open Access Journals (Sweden)

Adam Sweetman

2015-05-01

Full Text Available Background: Highly ordered three-dimensional colloidal crystals (supracrystals comprised of 7.4 nm diameter Au nanocrystals (with a 5% size dispersion have been imaged and analysed using a combination of scanning tunnelling microscopy and dynamic force microscopy.Results: By exploring the evolution of both the force and tunnel current with respect to tip–sample separation, we arrive at the surprising finding that single nanocrystal resolution is readily obtained in tunnelling microscopy images acquired more than 1 nm into the repulsive (i.e., positive force regime of the probe–nanocrystal interaction potential. Constant height force microscopy has been used to map tip–sample interactions in this regime, revealing inhomogeneities which arise from the convolution of the tip structure with the ligand distribution at the nanocrystal surface.Conclusion: Our combined STM–AFM measurements show that the contrast mechanism underpinning high resolution imaging of nanoparticle supracrystals involves a form of nanoscale contact imaging, rather than the through-vacuum tunnelling which underpins traditional tunnelling microscopy and spectroscopy.

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

International Nuclear Information System (INIS)

Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

2005-01-01

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A., E-mail: jolson@fit.edu; Baum, J. Clayton, E-mail: cbaum@fit.edu [Department of Chemistry, Florida Institute of Technology, 150 West University Boulevard, Melbourne, Florida 32901 (United States); Novak, Mark J. [Department of Chemistry and Applied Biological Sciences, South Dakota School of Mines and Technology, 501 E. Saint Joseph Street, Rapid City, South Dakota 57701 (United States)

2016-09-15

A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ{sub ap}) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

International Nuclear Information System (INIS)

Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A.; Baum, J. Clayton; Novak, Mark J.

2016-01-01

A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ_a_p) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

Directory of Open Access Journals (Sweden)

Ting Xie

2017-12-01

Full Text Available A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

Molecules on vicinal Au surfaces studied by scanning tunnelling microscopy

International Nuclear Information System (INIS)

Kroeger, J; Neel, N; Jensen, H; Berndt, R; Rurali, R; Lorente, N

2006-01-01

Using low-temperature scanning tunnelling microscopy and spectroscopy we investigated the adsorption characteristics of 3,4,9,10-perylenetetracarboxylic-dianhydride and fullerenes on Au(788), Au(433), and Au(778). On Au(788) and Au(778), 3,4,9,10-perylenetetracarboxylic-dianhydride exhibits three coexisting superstructures, which do not reflect the periodicity of the hosting substrate. The adsorption on Au(433) leads to the formation of molecule chains along the step edges after annealing the sample. Fullerene molecules on Au(788) arrange in a mesh of islands, which extends over several hundreds of nanometres with an extraordinarily high periodicity. A combination of fullerene adsorption and annealing leads to facetting of Au(433) and the formation of extraordinarily long fullerene stripes

Thermally processed titanium oxides film on Si(0 0 1) surface studied with scanning tunneling microscopy/spectroscopy

International Nuclear Information System (INIS)

Aoki, T.; Shudo, K.; Sato, K.; Ohno, S.; Tanaka, M.

2010-01-01

Thermal structural changes of TiO x films built on a Si(0 0 1) surface were investigated at the nanometer scale with scanning tunneling microscopy. Electronic properties of individual clusters were classified by means of scanning tunneling spectroscopy. The differential conductance (dI/dV) near the Fermi energy showed that nano-clusters were transformed from semiconducting Ti-silicates into metallic Ti-silicides after heating to 970 K. Peaks of normalized differential conductance (dI/dV/(I/V)) of the clusters shifted after heating to about 1070 K, indicating exclusion of oxygen from the clusters.

Introduction to scanning tunneling microscopy

CERN Document Server

Chen, C Julian

2008-01-01

The scanning tunneling and the atomic force microscope, both capable of imaging individual atoms, were crowned with the Physics Nobel Prize in 1986, and are the cornerstones of nanotechnology today. This is a thoroughly updated version of this 'bible' in the field.

Electronic structure classifications using scanning tunneling microscopy conductance imaging

International Nuclear Information System (INIS)

Horn, K.M.; Swartzentruber, B.S.; Osbourn, G.C.; Bouchard, A.; Bartholomew, J.W.

1998-01-01

The electronic structure of atomic surfaces is imaged by applying multivariate image classification techniques to multibias conductance data measured using scanning tunneling microscopy. Image pixels are grouped into classes according to shared conductance characteristics. The image pixels, when color coded by class, produce an image that chemically distinguishes surface electronic features over the entire area of a multibias conductance image. Such open-quotes classedclose quotes images reveal surface features not always evident in a topograph. This article describes the experimental technique used to record multibias conductance images, how image pixels are grouped in a mathematical, classification space, how a computed grouping algorithm can be employed to group pixels with similar conductance characteristics in any number of dimensions, and finally how the quality of the resulting classed images can be evaluated using a computed, combinatorial analysis of the full dimensional space in which the classification is performed. copyright 1998 American Institute of Physics

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Xiaole [Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Chen, Xianfeng [The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L., E-mail: clgao@sjtu.edu.cn; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China); Luo, Weidong, E-mail: wdluo@sjtu.edu.cn [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

2016-02-08

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations.

Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Zhang, K. F.; Yang, Fang; Song, Y. R.; Zhang, Xiaole; Chen, Xianfeng; Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng; Luo, Weidong

2016-01-01

Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations

Topography and local modification of the HoBa2Cu3O/sub 7-//sub x/(001) surface using scanning tunneling microscopy

International Nuclear Information System (INIS)

Heinzelmann, H.; Anselmetti, D.; Wiesendanger, R.; Guentherodt, H.; Kaldis, E.; Wisard, A.

1988-01-01

The topography of the (001) surface of a high T/sub c/ superconducting HoBa 2 Cu 3 O/sub 7-//sub x/ single crystal was investigated in air using scanning tunneling microscopy. We found large, flat terraces separated by growth steps. The heights of these steps correspond to multiples of the c-axis lattice constant of 11.7 A of the perovskite structure. These steps have been verified by atomic force microscopy. On a smaller scale the flat terraces showed some fine structure with a corrugation height of 4 to 5 A and a lateral extent of several nanometers. In addition, we succeeded in creating nanometer-sized structures by increasing the sample bias voltage and tunneling current

Facile synthesis and electron transport properties of NiO nanostructures investigated by scanning tunneling microscopy

Directory of Open Access Journals (Sweden)

Govind Mallick

2017-08-01

Full Text Available Due to their unique chemical, thermal, electronic and photonic properties, low -dimensional transition metal oxides, especially NiO, have attracted great deal of attention for potential applications in a wide range of technologies, such as, sensors, electrochromic coatings and self-healing materials. However, their synthesis involves multi-step complex procedures that in addition to being expensive, further introduce impurities. Here we present a low cost facile approach to synthesize uniform size NiO nanoparticles (NPs from hydrothermally grown Ni(OH2. Detailed transmission electron microscopic analysis reveal the average size of NiO NPs to be around 29 nm. The dimension of NiO NP is also corroborated by the small area scanning tunneling microscope (STM measurements. Further, we investigate electron transport characteristics of newly synthesized Ni(OH2 and NiO nanoparticles on p-type Si substrate using scanning tunneling microscopy. The conductivity of Ni(OH2 and NiO are determined to be 1.46x10-3 S/cm and 2.37x10-5 S/cm, respectively. The NiO NPs exhibit a lower voltage window (∼0.7 V electron tunneling than the parent Ni(OH2.

Scanning Tunneling Microscopy Evidence for the Dissociation of Carbon Monoxide on Ruthenium Steps

DEFF Research Database (Denmark)

Tison, Yann; Nielsen, Kenneth; Mowbray, Duncan J.

2012-01-01

–Tropsch processes under certain conditions, has been debated for years. Here, scanning tunneling microscopy (STM) and density functional theory (DFT) are used to clarify the role of monatomic steps in the splitting of CO on a stepped Ru(0 1 54) crystal, which displays alternating steps with either 4-fold or 3-fold...... symmetry. After CO doses at elevated temperatures, the STM images reveal step decorations characteristic of atomic oxygen resulting from CO dissociation on every second step. The comparison of the STM images with the results of DFT calculations shows that the step decoration occurs on the steps displaying...

Effects of the finite duration of quantum tunneling in laser-assisted scanning tunneling microscopy

International Nuclear Information System (INIS)

Hagmann, M.J.

1994-01-01

Previous measurements of tunnel conductance in heterostructures and experiments with Josephson junctions suggest quantum tunneling has a definite duration. The authors use semiclassical methods to determine the effects of this delay on the tunneling current in a laser-assisted STM. A planar-planar STM model is used with the exact multiple image potential, and the energy distribution for a free-electron metal. It is necessary to average over the phase at barrier entry, and iteration with back propagated solutions is required to obtain the transmission coefficients for evenly spaced phases and specified energies at barrier entry. The simulations suggest that the dependence of the tunneling current on the wavelength of illumination can serve as a basis for determining the duration of barrier traversal. A power flux density of 10 11 W/m 2 would be required at several wavelengths from 1 to 10 μm. It is possible that thermal effects could be separated from the modeled phenomena by determining the time dependence of the tunneling current with a pulsed laser

An ultrahigh-vacuum cryostat for simultaneous scanning tunneling microscopy and magneto-transport measurements down to 400 mK.

Science.gov (United States)

Liebmann, Marcus; Bindel, Jan Raphael; Pezzotta, Mike; Becker, Stefan; Muckel, Florian; Johnsen, Tjorven; Saunus, Christian; Ast, Christian R; Morgenstern, Markus

2017-12-01

We present the design and calibration measurements of a scanning tunneling microscope setup in a 3 He ultrahigh-vacuum cryostat operating at 400 mK with a hold time of 10 days. With 2.70 m in height and 4.70 m free space needed for assembly, the cryostat fits in a one-story lab building. The microscope features optical access, an xy table, in situ tip and sample exchange, and enough contacts to facilitate atomic force microscopy in tuning fork operation and simultaneous magneto-transport measurements on the sample. Hence, it enables scanning tunneling spectroscopy on microstructured samples which are tuned into preselected transport regimes. A superconducting magnet provides a perpendicular field of up to 14 T. The vertical noise of the scanning tunneling microscope amounts to 1 pm rms within a 700 Hz bandwidth. Tunneling spectroscopy using one superconducting electrode revealed an energy resolution of 120 μeV. Data on tip-sample Josephson contacts yield an even smaller feature size of 60 μeV, implying that the system operates close to the physical noise limit.

An ultrahigh-vacuum cryostat for simultaneous scanning tunneling microscopy and magneto-transport measurements down to 400 mK

Science.gov (United States)

Liebmann, Marcus; Bindel, Jan Raphael; Pezzotta, Mike; Becker, Stefan; Muckel, Florian; Johnsen, Tjorven; Saunus, Christian; Ast, Christian R.; Morgenstern, Markus

2017-12-01

We present the design and calibration measurements of a scanning tunneling microscope setup in a 3He ultrahigh-vacuum cryostat operating at 400 mK with a hold time of 10 days. With 2.70 m in height and 4.70 m free space needed for assembly, the cryostat fits in a one-story lab building. The microscope features optical access, an xy table, in situ tip and sample exchange, and enough contacts to facilitate atomic force microscopy in tuning fork operation and simultaneous magneto-transport measurements on the sample. Hence, it enables scanning tunneling spectroscopy on microstructured samples which are tuned into preselected transport regimes. A superconducting magnet provides a perpendicular field of up to 14 T. The vertical noise of the scanning tunneling microscope amounts to 1 pmrms within a 700 Hz bandwidth. Tunneling spectroscopy using one superconducting electrode revealed an energy resolution of 120 μeV. Data on tip-sample Josephson contacts yield an even smaller feature size of 60 μeV, implying that the system operates close to the physical noise limit.

Voltammetry and In Situ Scanning Tunnelling Microscopy of De Novo Designed Heme Protein Monolayers on Au(111)-Electrode Surfaces

DEFF Research Database (Denmark)

Albrecht, Tim; Li, Wu; Haehnel, Wolfgang

2006-01-01

to the tunnelling current, apparently due to slow electron transfer kinetics. As a consequence, STM images of heme-containing and heme-free MOP-C did not reveal any notable differences in apparent height or physical extension. The apparent height of heme-containing MOP-C did not show any dependence on the substrate...... potential being varied around the redox potential of the protein. The mere presence of an accessible molecular energy level is not sufficient to result in detectable tunnelling current modulation. (c) 2006 Elsevier B.V. All rights reserved.......In the present work, we report the electrochemical characterization and in situ scanning tunnelling microscopy (STM) studies of monolayers of an artificial de novo designed heme protein MOP-C, covalently immobilized on modified Au(111) surfaces. The protein forms closely packed monolayers, which...

Scanning tunnelling microscopy of a foldamer prototype at the liquid/solid interface : water/Au(111) versus 1-octanol/graphite

NARCIS (Netherlands)

Klymchenko, Andrey S.; Schuurmans, Norbert; van der Auweraer, Mark; Feringa, Ben L.; van Esch, Jan; De Feyter, Steven

2006-01-01

We report the design and synthesis of a catechol based foldamer containing amide functionalized alkyl chains, and its monolayer formation at the liquid/solid interface. By scanning tunnelling microscopy, both at the 1-octanol/graphite interface as well as at the water/Au( 111) interface, the

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Energy Technology Data Exchange (ETDEWEB)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

2016-03-07

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Molecular electronics of a single photosystem I reaction center: Studies with scanning tunneling microscopy and spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lee, I.; Lee, J.W.; Warmack, R.J.; Allison, D.P.; Greenbaum, E. [Oak Ridge National Lab., TN (United States)

1995-03-14

Thylakoids and photosystem I (PSI) reaction centers were imaged by scanning tunneling microscopy. The thylakoids were isolated from spinach chloroplasts, and PSI reaction centers were extracted from thylakoid membranes. Because thylakoids are relatively thick nonconductors, they were sputter-coated with Pd/Au before imaging. PSI photosynthetic centers and chemically platinized PSI were investigated without sputter-coating. They were mounted on flat gold substrates that had been treated with mercaptoacetic acid to help bind the proteins. With tunneling spectroscopy, the PSI centers displayed a semiconductor-like response with a band gap of 1.8 eV. Lightly platinized (platinized for 1 hr) centers displayed diode-like conduction that resulted in dramatic contrast changes between images taken with opposite bias voltages. The electronic properties of this system were stable under long-term storage. 42 refs., 7 figs.

Scanning tunneling microscopy and spectroscopy of twisted trilayer graphene

Science.gov (United States)

Zuo, Wei-Jie; Qiao, Jia-Bin; Ma, Dong-Lin; Yin, Long-Jing; Sun, Gan; Zhang, Jun-Yang; Guan, Li-Yang; He, Lin

2018-01-01

Twist, as a simple and unique degree of freedom, could lead to enormous novel quantum phenomena in bilayer graphene. A small rotation angle introduces low-energy van Hove singularities (VHSs) approaching the Fermi level, which result in unusual correlated states in the bilayer graphene. It is reasonable to expect that the twist could also affect the electronic properties of few-layer graphene dramatically. However, such an issue has remained experimentally elusive. Here, by using scanning tunneling microscopy/spectroscopy (STM/STS), we systematically studied a twisted trilayer graphene (TTG) with two different small twist angles between adjacent layers. Two sets of VHSs, originating from the two twist angles, were observed in the TTG, indicating that the TTG could be simply regarded as a combination of two different twisted bilayers of graphene. By using high-resolution STS, we observed a split of the VHSs and directly imaged the spatial symmetry breaking of electronic states around the VHSs. These results suggest that electron-electron interactions play an important role in affecting the electronic properties of graphene systems with low-energy VHSs.

Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy.

Science.gov (United States)

Hill, Heather M; Rigosi, Albert F; Rim, Kwang Taeg; Flynn, George W; Heinz, Tony F

2016-08-10

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), we examine the electronic structure of transition metal dichalcogenide heterostructures (TMDCHs) composed of monolayers of MoS2 and WS2. STS data are obtained for heterostructures of varying stacking configuration as well as the individual monolayers. Analysis of the tunneling spectra includes the influence of finite sample temperature, yield information about the quasi-particle bandgaps, and the band alignment of MoS2 and WS2. We report the band gaps of MoS2 (2.16 ± 0.04 eV) and WS2 (2.38 ± 0.06 eV) in the materials as measured on the heterostructure regions and the general type II band alignment for the heterostructure, which shows an interfacial band gap of 1.45 ± 0.06 eV.

Real-Space Analysis of Scanning Tunneling Microscopy Topography Datasets Using Sparse Modeling Approach

Science.gov (United States)

Miyama, Masamichi J.; Hukushima, Koji

2018-04-01

A sparse modeling approach is proposed for analyzing scanning tunneling microscopy topography data, which contain numerous peaks originating from the electron density of surface atoms and/or impurities. The method, based on the relevance vector machine with L1 regularization and k-means clustering, enables separation of the peaks and peak center positioning with accuracy beyond the resolution of the measurement grid. The validity and efficiency of the proposed method are demonstrated using synthetic data in comparison with the conventional least-squares method. An application of the proposed method to experimental data of a metallic oxide thin-film clearly indicates the existence of defects and corresponding local lattice distortions.

New directions in point-contact spectroscopy based on scanning tunneling microscopy techniques (Review Article)

International Nuclear Information System (INIS)

Tartaglini, E.; Verhagen, T.G.A.; Galli, F.; Trouwborst, M.L.; Aarts, J.; Van-Ruitebbeek, J.M.; Muller, R.; Shiota, T.

2013-01-01

Igor Yanson showed 38 years ago for the first time a point-contact measurement where he probed the energy resolved spectroscopy of the electronic scattering inside the metal. Since this first measurement, the pointcontact spectroscopy (PCS) technique improved enormously. The application of the scanning probe microscopy (SPM) techniques in the late 1980s allowed achieving contacts with a diameter of a single atom. With the introduction of the mechanically controlled break junction technique, even spectroscopy on freely suspended chains of atoms could be performed. In this paper, we briefly review the current developments of PCS and show recent experiments in advanced scanning PCS based on SPM techniques. We describe some results obtained with both needle-anvil type of point contacts and scanning tunneling microscopy (STM). We also show our first attempt to lift up with a STM a chain of single gold atoms from a Au(110) surface.

Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

Science.gov (United States)

Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

2011-02-02

Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

Scanning tunneling microscopy I general principles and applications to clean and absorbate-covered surfaces

CERN Document Server

Wiesendanger, Roland

1994-01-01

Since the first edition of "Scanning 'funneling Microscopy I" has been pub­ lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop­ ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up­ dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel­ oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at th...

Spectroscopic scanning tunneling microscopy insights into Fe-based superconductors

International Nuclear Information System (INIS)

Hoffman, Jennifer E

2011-01-01

In the first three years since the discovery of Fe-based high T c superconductors, scanning tunneling microscopy (STM) and spectroscopy have shed light on three important questions. First, STM has demonstrated the complexity of the pairing symmetry in Fe-based materials. Phase-sensitive quasiparticle interference (QPI) imaging and low temperature spectroscopy have shown that the pairing order parameter varies from nodal to nodeless s± within a single family, FeTe 1-x Se x . Second, STM has imaged C4 → C2 symmetry breaking in the electronic states of both parent and superconducting materials. As a local probe, STM is in a strong position to understand the interactions between these broken symmetry states and superconductivity. Finally, STM has been used to image the vortex state, giving insights into the technical problem of vortex pinning, and the fundamental problem of the competing states introduced when superconductivity is locally quenched by a magnetic field. Here we give a pedagogical introduction to STM and QPI imaging, discuss the specific challenges associated with extracting bulk properties from the study of surfaces, and report on progress made in understanding Fe-based superconductors using STM techniques.

Photoelectrical properties of semiconductor tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Groeneveld, R.H.M.; Gelder, Van A.P.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on the electrical properties of a photoexcited tunnel junction between a metal and a semiconductor material, as is established in a scanning tunneling microscope. The model treats the case in which carrier transport is mediated by capture and relaxation in

Vacuum phonon tunneling.

Science.gov (United States)

Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

2010-10-15

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

2013-08-15

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

2013-01-01

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

TBM tunneling on the Yucca Mountain Project: Proceedings

International Nuclear Information System (INIS)

Williamson, G.E.; Gowring, I.M.

1995-01-01

The US Department of Energy's (DOE) Yucca Mountain Project (YMP) is a scientific endeavor to determine the suitability of Yucca Mountain for the first long term, high level nuclear waste repository in the United States. Status of this long-term project form the construction perspective is described. A key element is construction of the Exploratory Studies Facility (ESF), which is being excavated with a 7. 6 m(25 ft) diameter tunnel boring machine (TBM). Development of the ESF may include the excavation of over 15 km (9.3 mi) of tunnel varying in size from 3 to 7.6 m(10 to 25 ft). Prior to construction, extensive constructibility reviews were an interactive part of the final design. Intent was to establish a constructible design that met the long-term stability requirements for radiological safety of a future repository while maintaining flexibility for the scientific investigations and acceptable tunneling productivity

Atomic origin of the scanning tunneling microscopy images of charge-density-waves on 1T-TaSe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Stoltz, D. [Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands)], E-mail: stoltz@physics.leidenuniv.nl; Bielmann, M.; Schlapbach, L. [Swiss Federal Lab for Materials Science and Technology (EMPA), CH-8600 Duebendorf (Switzerland); Bovet, M. [Institut de Physique, Universite de Neuchatel, CH-2000 Neuchatel (Switzerland); Berger, H. [Institut de Physique Appliquee, EPF, 1015 Lausanne (Switzerland); Goethelid, M. [Materialfysik, MAP, KTH-Electrum, SE-16440 Kista (Sweden); Stoltz, S.E. [MAX-Lab, Lund University, SE-22100 Lund (Sweden); Starnberg, H.I. [Department of Physics, Goeteborg University and Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

2008-07-01

We show atomically resolved scanning tunneling microscopy (STM) images of charge density waves (CDWs) at room temperature together with angle-resolved photoelectron band-mapping of 1T-TaSe{sub 2}. By comparing the results of these two techniques, we demonstrate the atomic structure of the CDW-features observed by the STM and atomic origin of the reconstructed band-structure in this material.

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Science.gov (United States)

Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S.; Desai, Dhruv K.; Rodgers, Griffin F.; Bradley, Aaron J.; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F.

2015-01-01

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene’s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices. PMID:26273961

Electrochemistry and in situ scanning tunnelling microscopy of pure and redox-marked DNA- and UNA-based oligonucleotides on Au(111)-electrode surfaces

DEFF Research Database (Denmark)

Hansen, Allan Glargaard; Salvatore, Princia; Karlsen, K.

2013-01-01

the strongest and in accord with multiple site Ru-attachment. In situ STM disclosed molecular scale features in varying coverage on addition of the metal ions. The Ru-derivatives showed a bias voltage dependent broad maximum in the tunnelling current–overpotential correlation which could be correlated......We have studied adsorption and electrochemical electron transfer of several 13- and 15-base DNA and UNA (unlocked nucleic acids) oligonucleotides (ONs) linked to Au(111)-electrode surfaces via a 50-C6-SH group using cyclic voltammetry (CV) and scanning tunnelling microscopy in aqueous buffer under...

Manipulating individual dichlorotin phthalocyanine molecules on Cu(100) surface at room temperature by scanning tunneling microscopy

International Nuclear Information System (INIS)

Li, Chao; Xiang, Feifei; Wang, Zhongping; Liu, Xiaoqing; Jiang, Danfeng; Wang, Li; Wang, Guang; Zhang, Xueao; Chen, Wei

2014-01-01

Single molecule manipulations have been achieved on dichlorotin phthalocyanine(SnCl 2 Pc) molecules adsorbed on Cu (100) at room temperature. Scanning tunneling microscopy observations directly demonstrate that the individual SnCl 2 Pc molecules can be moved along the [100] direction on Cu(100) surface by employing a scanning tunneling microscope tip fixed at the special position of the molecules. The orientation of the molecule can be switched between two angles of ±28° with respect to the [011] surface direction in the same way. Dependences of the probability of molecular motion on the distances between the tip and the molecules reveal that the mechanism for such manipulation of a SnCl 2 Pc molecule is dominated by the repulsive interactions between the tip and the molecules. With the assistance of this manipulation process, a prototype molecular storage array with molecular orientation as information carrier and an artificial hydrogen bonded supramolecular structure have been constructed on the surface. (paper)

Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study

Energy Technology Data Exchange (ETDEWEB)

Krawiec, M.; Kwapinski, T.; Jalochowski, M. [Institute of Physics and Nanotechnology Center, M. Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin (Poland)

2005-02-01

We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Apparent Barrier Height in Scanning Tunneling Microscopy Revisited

DEFF Research Database (Denmark)

Olesen, L.; Brandbyge, Mads; Sørensen, Mads Reinholdt

1996-01-01

The apparent barrier height phi(ap), that is, the rate of change of the logarithm of the conductance with tip-sample separation in a scanning tunneling microscope (STM), has been measured for Ni, Pt, and Au single crystal surfaces. The results show that phi(ap) is constant until point contact...... is reached rather than decreasing at small tunneling gap distances, as previously reported. The findings for phi(ap) can be accounted for theoretically by including the relaxations of the tip-surface junction in an STM due to the strong adhesive forces at close proximity. These relaxation effects are shown...

Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces; Rastertunnelmikroskopie und -spektroskopie an GaN- und InGaN-Oberflaechen

Energy Technology Data Exchange (ETDEWEB)

Krueger, David

2009-12-02

Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

Measurement of the vortex-core radius by scanning tunneling microscopy

NARCIS (Netherlands)

Hartmann, U.; Golubov, Alexandre Avraamovitch; Drechsler, T.; Kupriyanov, M. Yu; Heiden, C.

1994-01-01

Using a scanning tunneling microscope operated in a spectroscopic mode we imaged flux-line lattices in niobium diselenide at various external magnetic fields. From the evaluation of a large number of tunneling-current profiles taken across the individual vortices we deduced the dependence of the

A nanoscale gigahertz source realized with Josephson scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Jäck, Berthold, E-mail: b.jaeck@fkf.mpg.de; Eltschka, Matthias; Assig, Maximilian; Etzkorn, Markus; Ast, Christian R. [Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart (Germany); Hardock, Andreas [Institut für Theoretische Elektrotechnik, Technische Universität Hamburg-Harburg, 21079 Hamburg (Germany); Kern, Klaus [Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart (Germany); Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland)

2015-01-05

Using the AC Josephson effect in the superconductor-vacuum-superconductor tunnel junction of a scanning tunneling microscope (STM), we demonstrate the generation of GHz radiation. With the macroscopic STM tip acting as a λ/4-monopole antenna, we first show that the atomic scale Josephson junction in the STM is sensitive to its frequency-dependent environmental impedance in the GHz regime. Further, enhancing Cooper pair tunneling via excitations of the tip eigenmodes, we are able to generate high-frequency radiation. We find that for vanadium junctions, the enhanced photon emission can be tuned from about 25 GHz to 200 GHz and that large photon flux in excess of 10{sup 20 }cm{sup −2} s{sup −1} is reached in the tunnel junction. These findings demonstrate that the atomic scale Josephson junction in an STM can be employed as a full spectroscopic tool for GHz frequencies on the atomic scale.

Time evolution of tunneling in a thermal medium: Environment-driven excited tunneling

International Nuclear Information System (INIS)

Matsumoto, Sh.; Yoshimura, M.

2004-01-01

Time evolution of tunneling phenomena proceeding in a thermal medium is studied using a standard model of environmental interaction. A semiclassical probability formula for the particle motion in a metastable state of a one-dimensional system put in a thermal medium is combined with the formula of the quantum penetration factor through a potential barrier to derive the tunneling rate in the medium. The effect of environment, its influence on time evolution in particular, is clarified in our real-time formalism. A nonlinear resonance effect is shown to enhance the tunneling rate at finite times of order 2/η, with η the friction coefficient unless η is too small. In the linear approximation this effect has relevance to the parametric resonance. This effect enhances the possibility of early termination of the cosmological phase transition much prior to the typical Hubble time

Electrospray deposition of fullerenes in ultra-high vacuum: in situ scanning tunneling microscopy and photoemission spectroscopy

International Nuclear Information System (INIS)

Satterley, Christopher J; Perdigao, LuIs M A; Saywell, Alex; Magnano, Graziano; Rienzo, Anna; Mayor, Louise C; Dhanak, Vinod R; Beton, Peter H; O'Shea, James N

2007-01-01

Electrospray deposition of fullerenes on gold has been successfully observed by in situ room temperature scanning tunneling microscopy and photoemission spectroscopy. Step-edge decoration and hexagonal close-packed islands with a periodicity of 1 nm are observed at low and multilayer coverages respectively, in agreement with thermal evaporation studies. Photoemission spectroscopy shows that fullerenes are being deposited in high purity and are coupling to the gold surface as for thermal evaporation. These results open a new route for the deposition of thermally labile molecules under ultra-high vacuum conditions for a range of high resolution surface science techniques

Scanning tunneling microscopy study of a newly proposed topological insulator ZrTe{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Kuhn, Timo; Gragnaniello, Luca; Fonin, Mikhail [Universitaet Konstanz (Germany); Autes, Gabriel; Berger, Helmuth; Yazyev, Oleg [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland); Manzoni, Giulia [Universita degli Studi di Trieste (Italy); Crepaldi, Alberto; Parmigiani, Fulvio [Elettra-Sincrotrone Trieste, Trieste (Italy)

2016-07-01

Topological insulators belong to a new kind of material class that posses robust gapless states inside the insulating bulk gap, which makes them promising candidates for achieving dissipationless transport devices. We present a Scanning tunneling microscopy (STM) and spectroscopy (STS) study on a layered material ZrTe{sub 5}, a promising candidate for a new topological insulator. The crystal structure could clearly be identified in topography images. STM measurements enabled direct imaging of standing waves at steps and defects. The standing waves show a clearly dispersive character. Furthermore STS measurements are in good agreement with density functional theory calculations and reveal Landau quantization with applied magnetic field. Comparison with data obtained by angle resolved photoemission spectroscopy allows for detailed insights into the electronic properties of this material.

Insulating nanoparticles on YBa2Cu3O7-δ thin films revealed by comparison of atomic force and scanning tunneling microscopy

International Nuclear Information System (INIS)

Thomson, R.E.; Moreland, J.; Missert, N.; Rudman, D.A.; Sanders, S.C.; Cole, B.F.

1993-01-01

The surface topography of YBa 2 Cu 3 O 7-δ thin films has been studied with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The AFM images reveal a high density of small distinct nanoparticles, 10--50 nm across and 5--20 nm high, which do not appear in STM images of the same samples. In addition, we have shown that scanning the STM tip across the surface breaks off these particles and moves them to the edge of the scanned area, where they can later be imaged with the AFM

Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

International Nuclear Information System (INIS)

Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R.

2015-01-01

An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

Energy Technology Data Exchange (ETDEWEB)

Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R., E-mail: dkillelea@luc.edu [Department of Chemistry and Biochemistry, Loyola University Chicago, 1068 W. Sheridan Rd., Chicago, Illinois 60660 (United States)

2015-03-15

An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

Surface polymerization of (3,4-ethylenedioxythiophene) probed by in situ scanning tunneling microscopy on Au(111) in ionic liquids.

Science.gov (United States)

Ahmad, Shahzada; Carstens, Timo; Berger, Rüdiger; Butt, Hans-Jürgen; Endres, Frank

2011-01-01

The electropolymerization of 3,4-ethylenedioxythiophene (EDOT) to poly(3,4-ethylenedioxythiophene) (PEDOT) was investigated in the air and water-stable ionic liquids 1-hexyl-3-methylimidazolium tris(pentafluoroethyl) trifluorophosphate [HMIm]FAP and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) amide [EMIm]TFSA. In situ scanning tunnelling microscopy (STM) results show that the electropolymerization of EDOT in the ionic liquid can be probed on the nanoscale. In contrast to present understanding, it was observed that the EDOT can be oxidised in ionic liquids well below its oxidation potential and the under potential growth of polymer was visualized by in situ STM. These results serve as the first study to confirm the under potential growth of conducting polymers in ionic liquids. Furthermore, ex situ microscopy measurements were performed. Quite a high current of 670 nA was observed on the nanoscale by conductive scanning force microscopy (CSFM).

Combining scanning tunneling microscopy and synchrotron radiation for high-resolution imaging and spectroscopy with chemical, electronic, and magnetic contrast

International Nuclear Information System (INIS)

Cummings, M.L.; Chien, T.Y.; Preissner, C.; Madhavan, V.; Diesing, D.; Bode, M.; Freeland, J.W.; Rose, V.

2012-01-01

The combination of high-brilliance synchrotron radiation with scanning tunneling microscopy opens the path to high-resolution imaging with chemical, electronic, and magnetic contrast. Here, the design and experimental results of an in-situ synchrotron enhanced x-ray scanning tunneling microscope (SXSTM) system are presented. The system is designed to allow monochromatic synchrotron radiation to enter the chamber, illuminating the sample with x-ray radiation, while an insulator-coated tip (metallic tip apex open for tunneling, electron collection) is scanned over the surface. A unique feature of the SXSTM is the STM mount assembly, designed with a two free-flex pivot, providing an angular degree of freedom for the alignment of the tip and sample with respect to the incoming x-ray beam. The system designed successfully demonstrates the ability to resolve atomic-scale corrugations. In addition, experiments with synchrotron x-ray radiation validate the SXSTM system as an accurate analysis technique for the study of local magnetic and chemical properties on sample surfaces. The SXSTM system's capabilities have the potential to broaden and deepen the general understanding of surface phenomena by adding elemental contrast to the high-resolution of STM. -- Highlights: ► Synchrotron enhanced x-ray scanning tunneling microscope (SXSTM) system designed. ► Unique STM mount design allows angular DOF for tip alignment with x-ray beam. ► System demonstrates ability to resolve atomic corrugations on HOPG. ► Studies show chemical sensitivity with STM tip from photocurrent and tunneling. ► Results show system's ability to study local magnetic (XMCD) properties on Fe films.

Direct observation of atoms on surfaces by scanning tunnelling microscopy

International Nuclear Information System (INIS)

Baldeschwieler, J.D.

1989-01-01

The scanning tunnelling microscope is a non-destructive means of achieving atomic level resolution of crystal surfaces in real space to elucidate surface structures, electronic properties and chemical composition. Scanning tunnelling microscope is a powerful, real space surface structure probe complementary to other techniques such as x-ray diffraction. 21 refs., 8 figs

Scanning tunneling microscopy studies of glucose oxidase on gold surface

International Nuclear Information System (INIS)

Losic, D.; Shapter, J.G.; Gooding, J.J.

2002-01-01

Full text: Three immobilization methods have been used for scanning tunneling microscopy (STM) studies of glucose oxidase (GOD) on gold. They are based on a) physical adsorption from solution, b) microcontact printing and c) covalent bonding onto self-assembled monolayers (SAM) of 3-mercaptopropionic acid (MPA). The STM images are used to provide information about the organization of individual GOD molecules and more densely packed monolayers of GOD on electrode surfaces, thus providing information of the role of interfacial structure on biosensor performance. The use of atomically flat gold substrates enables easy distinction of deposited enzyme features from the flat gold substrate. Microcontact printing is found to be a more reliable method than adsorption from solution for preparing individual GOD molecules on the gold surface STM images of printed samples reveal two different shapes of native GOD molecules. One is a butterfly shape with dimensions of 10 ± 1 nm x 6 ± 1 nm, assigned to the lying position of molecule while the second is an approximately spherical shape with dimensions of 6.5 ± 1 nm x 5 ± 1nm assigned to a standing position. Isolated clusters of 5 to 6 GOD molecules are also observed. With monolayer coverage, GOD molecules exhibit a tendency to organize themselves into a two dimensional array with adequate sample stability to obtain high-resolution STM images. Within these two-dimensional arrays are clearly seen repeating clusters of five to six enzyme molecules in a unit STM imaging of GOD monolayers covalently immobilized onto SAM (MPA) are considerably more difficult than when the enzyme is adsorbed directly onto the metal. Cluster structures are observed both high and low coverage despite the fact that native GOD is a negatively charged molecule. Copyright (2002) Australian Society for Electron Microscopy Inc

Scanning tunneling microscopy III theory of STM and related scanning probe methods

CERN Document Server

Güntherodt, Hans-Joachim

1993-01-01

While the first two volumes on Scanning Tunneling Microscopy (STM) and its related scanning probe (SXM) methods have mainly concentrated on intro­ ducing the experimental techniques, as well as their various applications in different research fields, this third volume is exclusively devoted to the theory of STM and related SXM methods. As the experimental techniques including the reproducibility of the experimental results have advanced, more and more theorists have become attracted to focus on issues related to STM and SXM. The increasing effort in the development of theoretical concepts for STM/SXM has led to considerable improvements in understanding the contrast mechanism as well as the experimental conditions necessary to obtain reliable data. Therefore, this third volume on STM/SXM is not written by theorists for theorists, but rather for every scientist who is not satisfied by just obtaining real­ space images of surface structures by STM/SXM. After a brief introduction (Chap. 1), N. D. Lang first co...

Carrier tunneling in high magnetic fields

NARCIS (Netherlands)

Christianen, P.C.M.; Bruggink, I.E.M.; Maan, J.C.; Vleuten, van der W.C.

1995-01-01

Proceedings of the XXIV International School of Semiconducting Coinpounds, Jaszowiec 1995. A magnetic field induced coupling is observed between the Landau levels with different quantum number of two GaAs quantum wells separated by a thin (Ga,Al)As tunnel barrier using

New approach towards imaging -DNA using scanning tunneling

Indian Academy of Sciences (India)

DNA; scanning tunneling microscopy; Langmuir Blodget technique; silanization. ... Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of -Si(111) which ... Current Issue

Analysis and Calibration of in situ scanning tunnelling microscopy Images with atomic Resolution Influenced by Surface Drift Phenomena

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov; Møller, Per

1994-01-01

The influence of surface drift velocities on in situ scanning tunnelling microscopy (STM) experiments with atomic resolution is analysed experimentally and mathematically. Constant drift velocities much smaller than the speed of scanning can in many in situ STM experiments with atomic resolution ...... as well as the vectors of the non-distorted surface lattice can be determined. The calibration of distances can thus be carried out also when the image is influenced by drift. Results with gold surfaces and graphite surfaces are analysed and discussed....

The study of optimal conditions of electrochemical etching of tunnel electron microscopy tungsten tips

International Nuclear Information System (INIS)

Anguiano, E.; Aguilar, M.; Olivar, A.I.

1996-01-01

We present the experimental results obtained during the study made in the electrochemical etching of tunneling electron microscopy tungsten tips. The experiments was made using DC and two usual electrolytes: KOH and NaOH. For the tip preparation we used a electrochemical cell with stainless steel cathode and the tungsten wire as anode. the electrodes was introduced in a glass recipient containing the electrolytic solution. We study the effects of applied voltage, polish time, tip length and electrolyte concentration as process relevant parameters. The best condition for tip preparation was obtained with a metallurgical microscope and with a SEM.EDX and Auger analysis was made. The results shown the better tips was made with KOH as electrolyte with a limited concentration range (2-4 normal) and applied voltage (2-6 volts) (Author) 20 refs

Self-Organized Graphene Nanoribbons on SiC(0001) Studied with Scanning Tunneling Microscopy

Science.gov (United States)

Torrance, David; Zhang, Baiqian; Hoang, Tien; First, Phillip

2012-02-01

Graphene nanoribbons grown directly on nanofacets of SiC(0001) offer an attractive union of top-down and bottom-up fabrication techniques. Nanoribbons have been shown to form on the facets of templated silicon carbide substrates,ootnotetextSprinkle et al., Nat. Nanotech. 5, 727 (2010). but also appear spontaneously along step-bunches on vicinal SiC(0001) miscut slightly towards . These self-organized graphene nanoribbons were characterized with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) in ultra-high vacuum. Our measurements indicate that the graphene forms a continuous ``buffer layer'' across the SiC(0001) terraces during nanoribbon formation, with the zigzag edge of the buffer layer aligned parallel to the step-bunched nanofacets. Scanning tunneling microscopy/spectroscopy (STM/STS) was used to characterize the topography and electrical characteristics of the graphene nanoribbons. These measurements indicate that the graphene nanoribbons are highly-crystalline with predominantly zigzag edges.

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

Science.gov (United States)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

Science.gov (United States)

Phark, Soo-Hyon; Sander, Dirk

2017-01-01

Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy

Science.gov (United States)

Kanedy, K.; Lopez, F.; Wood, M. R.; Gmachl, C. F.; Weimer, M.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.; Kim, J. K.

2018-01-01

We show how cross-sectional scanning tunneling microscopy (STM) may be used to accurately map the period fluctuations throughout epitaxial, strained-layer superlattices based on the InAs/InAsSb and InGaAs/InAlAs material systems. The concept, analogous to Bragg's law in high-resolution x-ray diffraction, relies on an analysis of the [001]-convolved reciprocal-space satellite peaks obtained from discrete Fourier transforms of individual STM images. Properly implemented, the technique enables local period measurements that reliably discriminate vertical fluctuations localized to within ˜5 superlattice repeats along the [001] growth direction and orthogonal, lateral fluctuations localized to within ˜40 nm along directions in the growth plane. While not as accurate as x-ray, the inherent, single-image measurement error associated with the method may be made as small as 0.1%, allowing the vertical or lateral period fluctuations contributing to inhomogeneous energy broadening and carrier localization in these structures to be pinpointed and quantified. The direct visualization of unexpectedly large, lateral period fluctuations on nanometer length scales in both strain-balanced systems supports a common understanding in terms of correlated interface roughness.

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

Directory of Open Access Journals (Sweden)

Thomas König

2011-01-01

Full Text Available Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001 and line defects in aluminum oxide on NiAl(110, respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM and the electronic structure by scanning tunneling spectroscopy (STS. On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.

Scanning tunneling microscopy/spectroscopy of picene thin films formed on Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Yoshida, Yasuo, E-mail: yyoshida@issp.u-tokyo.ac.jp; Yokosuka, Takuya; Hasegawa, Yukio, E-mail: hasegawa@issp.u-tokyo.ac.jp [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Yang, Hung-Hsiang [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Huang, Hsu-Sheng; Guan, Shu-You; Su, Wei-Bin; Chang, Chia-Seng [Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan (China); Yanagisawa, Susumu [Department of Physics and Earth Science Department, University of the Ryukyus, 1 Nishihara, Okinawa 903-0213 (Japan); Lin, Minn-Tsong [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Hoffmann, Germar [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2014-09-21

Using ultrahigh-vacuum low-temperature scanning tunneling microscopy and spectroscopy combined with first principles density functional theory calculations, we have investigated structural and electronic properties of pristine and potassium (K)-deposited picene thin films formed in situ on a Ag(111) substrate. At low coverages, the molecules are uniformly distributed with the long axis aligned along the [112{sup ¯}] direction of the substrate. At higher coverages, ordered structures composed of monolayer molecules are observed, one of which is a monolayer with tilted and flat-lying molecules resembling a (11{sup ¯}0) plane of the bulk crystalline picene. Between the molecules and the substrate, the van der Waals interaction is dominant with negligible hybridization between their electronic states; a conclusion that contrasts with the chemisorption exhibited by pentacene molecules on the same substrate. We also observed a monolayer picene thin film in which all molecules were standing to form an intermolecular π stacking. Two-dimensional delocalized electronic states are found on the K-deposited π stacking structure.

Ultra-high vacuum compatible optical chopper system for synchrotron x-ray scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Chang, Hao, E-mail: hc000211@ohio.edu [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701 (United States); Cummings, Marvin; Shirato, Nozomi; Stripe, Benjamin; Preissner, Curt; Freeland, John W. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Rosenmann, Daniel [Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Kersell, Heath; Hla, Saw-Wai [Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701 (United States); Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Rose, Volker, E-mail: vrose@anl.gov [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

2016-01-28

High-speed beam choppers are a crucial part of time-resolved x-ray studies as well as a necessary component to enable elemental contrast in synchrotron x-ray scanning tunneling microscopy (SX-STM). However, many chopper systems are not capable of operation in vacuum, which restricts their application to x-ray studies with high photon energies, where air absorption does not present a significant problem. To overcome this limitation, we present a fully ultra-high vacuum (UHV) compatible chopper system capable of operating at variable chopping frequencies up to 4 kHz. The lightweight aluminum chopper disk is coated with Ti and Au films to provide the required beam attenuation for soft and hard x-rays with photon energies up to about 12 keV. The chopper is used for lock-in detection of x-ray enhanced signals in SX-STM.

Scanning tunneling microscopy studies of organic monolayers adsorbed on the rhodium(111) crystal surface

Energy Technology Data Exchange (ETDEWEB)

Cernota, Paul Davis [Univ. of California, Berkeley, CA (United States)

1999-08-01

Scanning Tunneling Microscopy studies were carried out on ordered overlayers on the (111) surface of rhodium. These adsorbates include carbon monoxide (CO), cyclohexane, cyclohexene, 1,4-cyclohexadiene, para-xylene, and meta-xylene. Coadsorbate systems included: CO with ethylidyne, CO with para- and meta-xylene, and para-xylene with meta-xylene. In the case of CO, the structure of the low coverage (2x2) overlayer has been observed. The symmetry of the unit cell in this layer suggests that the CO is adsorbed in the 3-fold hollow sites. There were also two higher coverage surface structures with (√7x√7) unit cells. One of these is composed of trimers of CO and has three CO molecules in each unit cell. The other structure has an additional CO molecule, making a total of four. This extra CO sits on a top site.

Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

Science.gov (United States)

Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

2016-06-16

Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation

International Nuclear Information System (INIS)

Nam, C.H.; Shim, Heejae; Kim, K.S.; Cho, B.K.

2004-01-01

Oxidation of an AlO x insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 A thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer

Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

2017-10-16

We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Prohl, Christopher; Lenz, Andrea, E-mail: alenz@physik.tu-berlin.de [Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin (Germany); Döscher, Henning; Kleinschmidt, Peter; Hannappel, Thomas [Helmholtz Center Berlin for Materials and Energy, 14109 Berlin (Germany)

2016-05-15

In a fundamental cross-sectional scanning tunneling microscopy investigation on epitaxially grown GaP layers on a Si(001) substrate, differently oriented antiphase boundaries are studied. They can be identified by a specific contrast and by surface step edges starting/ending at the position of an antiphase boundary. Moreover, a change in the atomic position of P and Ga atoms along the direction of growth is observed in agreement with the structure model of antiphase boundaries in the GaP lattice. This investigation opens the perspective to reveal the orientation and position of the antiphase boundaries at the atomic scale due to the excellent surface sensitivity of this method.

Giant tunnel-electron injection in nitrogen-doped graphene

DEFF Research Database (Denmark)

Lagoute, Jerome; Joucken, Frederic; Repain, Vincent

2015-01-01

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling...... and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene....

Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

Science.gov (United States)

Fransson, J

2009-06-01

The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

2014-10-01

The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si(110) substrate using scanning tunneling microscopy

Science.gov (United States)

Yang, Haoyu; Hattori, Azusa N.; Ohata, Akinori; Takemoto, Shohei; Hattori, Ken; Daimon, Hiroshi; Tanaka, Hidekazu

2017-11-01

A three-dimensional Si{111} vertical side-surface structure on a Si(110) wafer was fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing treatments. The side-surface was studied with scanning tunneling microscopy (STM) in atomic scale for the first time, in addition to atomic force microscopy (AFM), scanning electron microscopy (SEM), and low-energy electron diffraction (LEED). AFM and SEM showed flat and smooth vertical side-surfaces without scallops, and STM proved the realization of an atomically-flat 7 × 7-reconstructed structure, under optimized RIE and wet-etching conditions. STM also showed that a step-bunching occurred on the produced {111} side-surface corresponding to a reversely taped side-surface with a tilt angle of a few degrees, but did not show disordered structures. Characteristic LEED patterns from both side- and top-reconstructed surfaces were also demonstrated.

An extended model of electrons: experimental evidence from high-resolution scanning tunneling microscopy

International Nuclear Information System (INIS)

Hofer, Werner A

2012-01-01

In a recent paper we introduced a model of extended electrons, which is fully compatible with quantum mechanics in the formulation of Schrödinger. However, it contradicts the current interpretation of electrons as point-particles. Here, we show by a statistical analysis of high-resolution scanning tunneling microscopy (STM) experiments, that the interpretation of electrons as point particles and, consequently, the interpretation of the density of electron charge as a statistical quantity will lead to a conflict with the Heisenberg uncertainty principle. Given the precision in these experiments we find that the uncertainty principle would be violated by close to two orders of magnitude, if this interpretation were correct. We are thus forced to conclude that the density of electron charge is a physically real, i.e. in principle precisely measurable quantity, as derived in a recent paper. Experimental evidence to the contrary, in particular high-energy scattering experiments, is briefly discussed. The finding is expected to have wide implications in condensed matter physics, chemistry, and biology, scientific disciplines which are based on the properties and interactions of electrons.

Field-Induced Deformation as a Mechanism for Scanning Tunneling Microscopy Based Nanofabrication

DEFF Research Database (Denmark)

Hansen, Ole; Ravnkilde, Jan Tue; Quaade, Ulrich

1998-01-01

The voltage between tip and sample in a scanning tunneling microscope (STM) results in a large electric field localized near the tip apex. The mechanical stress due to this field can cause appreciable deformation of both tip and sample on the scale of the tunnel gap. We derive an approximate...

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1-x Fx)2

International Nuclear Information System (INIS)

Sugimoto, A.; Shohara, K.; Ekino, T.; Watanabe, Y.; Harada, Y.; Mikusu, S.; Tokiwa, K.; Watanabe, T.

2009-01-01

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba 2 Ca 5 Cu 6 O 12 (O 1-x F x ) 2 are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of ∼0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ ∼15 meV and ∼90 meV, respectively. The small gap structure disappears at the temperature close to T C , while the large gap persists up to ∼200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K B T C = 4.9 is obtained with T C = 70 K, which is determined from temperature dependence of the tunneling spectra.

Quantum-Sequencing: Biophysics of quantum tunneling through nucleic acids

Science.gov (United States)

Casamada Ribot, Josep; Chatterjee, Anushree; Nagpal, Prashant

2014-03-01

Tunneling microscopy and spectroscopy has extensively been used in physical surface sciences to study quantum tunneling to measure electronic local density of states of nanomaterials and to characterize adsorbed species. Quantum-Sequencing (Q-Seq) is a new method based on tunneling microscopy for electronic sequencing of single molecule of nucleic acids. A major goal of third-generation sequencing technologies is to develop a fast, reliable, enzyme-free single-molecule sequencing method. Here, we present the unique ``electronic fingerprints'' for all nucleotides on DNA and RNA using Q-Seq along their intrinsic biophysical parameters. We have analyzed tunneling spectra for the nucleotides at different pH conditions and analyzed the HOMO, LUMO and energy gap for all of them. In addition we show a number of biophysical parameters to further characterize all nucleobases (electron and hole transition voltage and energy barriers). These results highlight the robustness of Q-Seq as a technique for next-generation sequencing.

Optical characterication of probes for photon scanning tunnelling microscopy

DEFF Research Database (Denmark)

Vohnsen, Brian; Bozhevolnyi, Sergey I.

1999-01-01

The photon scanning tunnelling microscope is a well-established member of the family of scanning near-field optical microscopes used for optical imaging at the sub-wavelength scale. The quality of the probes, typically pointed uncoated optical fibres, used is however difficult to evaluate...

Resonance tunneling electron-vibrational spectroscopy of polyoxometalates.

Science.gov (United States)

Dalidchik, F I; Kovalevskii, S A; Balashov, E M

2017-05-21

The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier-Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters-energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level.

Hydrophilicity and Microsolvation of an Organic Molecule Resolved on the Sub-molecular Level by Scanning Tunneling Microscopy.

Science.gov (United States)

Lucht, Karsten; Loose, Dirk; Ruschmeier, Maximilian; Strotkötter, Valerie; Dyker, Gerald; Morgenstern, Karina

2018-01-26

Low-temperature scanning tunneling microscopy was used to follow the formation of a solvation shell around an adsorbed functionalized azo dye from the attachment of the first water molecule to a fully solvated molecule. Specific functional groups bind initially one water molecule each, which act as anchor points for additional water molecules. Further water attachment occurs in areas close to these functional groups even when the functional groups themselves are already saturated. In contrast, water molecules surround the hydrophobic parts of the molecule only when the two-dimensional solvation shell closes around them. This study thus traces hydrophilic and hydrophobic properties of an organic molecule down to a sub-molecular length scale. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Surface Area Tunnels in Hexagonal WO₃.

Science.gov (United States)

Sun, Wanmei; Yeung, Michael T; Lech, Andrew T; Lin, Cheng-Wei; Lee, Chain; Li, Tianqi; Duan, Xiangfeng; Zhou, Jun; Kaner, Richard B

2015-07-08

High surface area in h-WO3 has been verified from the intracrystalline tunnels. This bottom-up approach differs from conventional templating-type methods. The 3.67 Å diameter tunnels are characterized by low-pressure CO2 adsorption isotherms with nonlocal density functional theory fitting, transmission electron microscopy, and thermal gravimetric analysis. These open and rigid tunnels absorb H(+) and Li(+), but not Na(+) in aqueous electrolytes without inducing a phase transformation, accessing both internal and external active sites. Moreover, these tunnel structures demonstrate high specific pseudocapacitance and good stability in an H2SO4 aqueous electrolyte. Thus, the high surface area created from 3.67 Å diameter tunnels in h-WO3 shows potential applications in electrochemical energy storage, selective ion transfer, and selective gas adsorption.

Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)

2015-09-21

Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

Ballistic hole magnetic microscopy

NARCIS (Netherlands)

Haq, E.; Banerjee, T.; Siekman, M.H.; Lodder, J.C.; Jansen, R.

2005-01-01

A technique to study nanoscale spin transport of holes is presented: ballistic hole magnetic microscopy. The tip of a scanning tunneling microscope is used to inject hot electrons into a ferromagnetic heterostructure, where inelastic decay creates a distribution of electron-hole pairs.

The tunnel effect and their more important application: The microscope of quantum tunneling

International Nuclear Information System (INIS)

Alvarez M, L.

1999-01-01

Thanks to a donation made by the Volunteered Japanese JICA Program, the University National Headquarters Manizales, in particular the group of Physics of the Plasma, it has acquired a equipment where it is possible to combine several microscopy techniques: STM (scanning tunneling microscopy), AFM (atomic forced microscopy), MFM (magnetic forced microscopy) and LFM (lateral forced microscopy). These techniques group under the generic name of probe microscopy (SPM). The objective of this article is to offer a basic understanding to the whole university community on one of the previously mentioned techniques, STM, with the goal of generating future collaborations among the diverse investigators of the Headquarters. In the first one it leaves it explains the physical phenomenon in which the STM is based, then it is exposed in a brief way the operation of the same one and finally some of its applications are mentioned

New Knowledge of tunneling from photonic experiments

International Nuclear Information System (INIS)

Nimtz, G.

1997-01-01

Photonic experiments have shown, that the propagation of evanescent (tunneling) modes can proceed at speeds faster than the velocity of light in vacuum (superluminal). The superluminal velocities include signal and energy propagation. The analogy between the classical Helmholtz equation and the quantum mechanical Schroedinger equation was quantitatively proved in classical photonic experiments. The Hartman effect, i.e. the prediction that the tunneling time is independent of the barrier length was for the first time evidenced in a photonic analogous tunneling experiment by Enders and Nimtz. It is also shown, that the resonant state life time is not determined by the barrier traversal time. For electronic tunneling devices it follows, that the quantum mechanical phase time calculations indeed deliver the relevant intrinsic tunneling time and consequently allow to predict the dynamical specification of a device. The present theoretical descriptions of the propagation of evanescent modes is not fully compatible with the experimental situation. Superluminal signal and energy transport has been measured, and this has to be properly analyzed. May the advanced field solutions help to obtain a satisfactory theoretical description of the recent experimental results of the propagation of evanescent modes? (author)

Catalytic monolayer voltammetry and in situ scanning tunneling microscopy of copper nitrite reductase on cysteamine-modified Au(111) electrodes

DEFF Research Database (Denmark)

Zhang, Jingdong; Welinder, A.C.; Hansen, Allan Glargaard

2003-01-01

electrochemical scanning tunneling microscopy (in situ STM) directly in aqueous acetate buffer, pH 6.0 has been used. High-resolution in situ STM shows that cysteamine packs into ordered domains with strip features of a periodic distance of 11.7 +/- 0.3 Angstrom. No voltammetric signals of the nitrite substrate...... on this surface could be detected. A strong cathodic catalytic wave appears in the presence of nitrite. The catalytic current follows a Michaelis-Menten pattern with a Michaelis constant of K-m approximate to 44 muM, which is close to the value for AxCuNiR in homogeneous solution. The apparent catalytic rate...

Regular Scanning Tunneling Microscope Tips can be Intrinsically Chiral

International Nuclear Information System (INIS)

Tierney, Heather L.; Murphy, Colin J.; Sykes, E. Charles H.

2011-01-01

We report our discovery that regular scanning tunneling microscope tips can themselves be chiral. This chirality leads to differences in electron tunneling efficiencies through left- and right-handed molecules, and, when using the tip to electrically excite molecular rotation, large differences in rotation rate were observed which correlated with molecular chirality. As scanning tunneling microscopy is a widely used technique, this result may have unforeseen consequences for the measurement of asymmetric surface phenomena in a variety of important fields.

Regular scanning tunneling microscope tips can be intrinsically chiral.

Science.gov (United States)

Tierney, Heather L; Murphy, Colin J; Sykes, E Charles H

2011-01-07

We report our discovery that regular scanning tunneling microscope tips can themselves be chiral. This chirality leads to differences in electron tunneling efficiencies through left- and right-handed molecules, and, when using the tip to electrically excite molecular rotation, large differences in rotation rate were observed which correlated with molecular chirality. As scanning tunneling microscopy is a widely used technique, this result may have unforeseen consequences for the measurement of asymmetric surface phenomena in a variety of important fields.

Dynamic covalent chemistry of bisimines at the solid/liquid interface monitored by scanning tunnelling microscopy.

Science.gov (United States)

Ciesielski, Artur; El Garah, Mohamed; Haar, Sébastien; Kovaříček, Petr; Lehn, Jean-Marie; Samorì, Paolo

2014-11-01

Dynamic covalent chemistry relies on the formation of reversible covalent bonds under thermodynamic control to generate dynamic combinatorial libraries. It provides access to numerous types of complex functional architectures, and thereby targets several technologically relevant applications, such as in drug discovery, (bio)sensing and dynamic materials. In liquid media it was proved that by taking advantage of the reversible nature of the bond formation it is possible to combine the error-correction capacity of supramolecular chemistry with the robustness of covalent bonding to generate adaptive systems. Here we show that double imine formation between 4-(hexadecyloxy)benzaldehyde and different α,ω-diamines as well as reversible bistransimination reactions can be achieved at the solid/liquid interface, as monitored on the submolecular scale by in situ scanning tunnelling microscopy imaging. Our modular approach enables the structurally controlled reversible incorporation of various molecular components to form sophisticated covalent architectures, which opens up perspectives towards responsive multicomponent two-dimensional materials and devices.

Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

International Nuclear Information System (INIS)

Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

2015-01-01

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10 20  cm −3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed

Scanning tunneling spectroscopy under large current flow through the sample.

Science.gov (United States)

Maldonado, A; Guillamón, I; Suderow, H; Vieira, S

2011-07-01

We describe a method to make scanning tunneling microscopy/spectroscopy imaging at very low temperatures while driving a constant electric current up to some tens of mA through the sample. It gives a new local probe, which we term current driven scanning tunneling microscopy/spectroscopy. We show spectroscopic and topographic measurements under the application of a current in superconducting Al and NbSe(2) at 100 mK. Perspective of applications of this local imaging method includes local vortex motion experiments, and Doppler shift local density of states studies.

Probing the location of displayed cytochrome b562 on amyloid by scanning tunnelling microscopy

International Nuclear Information System (INIS)

Forman, C J; Barker, P D; Wang, N; Durkan, C; Yang, Z Y; Mowat, C G; Jarvis, S

2013-01-01

Amyloid fibres displaying cytochrome b 562 were probed using scanning tunnelling microscopy (STM) in vacuo. The cytochromes are electron transfer proteins containing a haem cofactor and could, in principle, mediate electron transfer between the tip and the gold substrate. If the core fibres were insulating and electron transfer within the 3D haem network was detected, then the electron transport properties of the fibre could be controlled by genetic engineering. Three kinds of STM images were obtained. At a low bias ( 562 was not detected by STM, which was attributed to low adhesion, whereas a monomeric multi-haem protein, GSU1996, was readily imaged. We conclude that the fibre superstructure may be intermittently conducting, that the cytochromes have been seen within the fibres and that they are too far apart for detectable current flow between sites to occur. We predict that GSU1996, being 10 nm long, is more likely to mediate successful electron transfer along the fibre as well as being more readily detectable when displayed from amyloid. (paper)

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

International Nuclear Information System (INIS)

Yan, Y J; Ren, M Q; Liu, X; Huang, Z C; Jiang, J; Fan, Q; Miao, J; Xie, B P; Zhang, T; Feng, D L; Xiang, F; Wang, X

2015-01-01

Recently, the non-centrosymmetric bismuth tellurohalides such as BiTeCl are being studied as possible candidates for topological insulators. While some photoemission studies showed that BiTeCl is an inversion asymmetric topological insulator, others showed that it is a normal semiconductor with Rashba splitting. Meanwhile, first-principle calculations have failed to confirm the existence of topological surface states in BiTeCl so far. Therefore, the topological nature of BiTeCl requires further investigation. Here we report a low-temperature scanning tunneling microscopy study on the surface states of BiTeCl single crystals. On the tellurium (Te) -terminated surfaces with relatively low defect density, evidence for topological surface states is observed in the quasi-particle interference patterns, both in the anisotropy of the scattering vectors and the fast decay of the interference near the step edges. Meanwhile, on the samples with much higher defect densities, we observed surface states that behave differently. Our results may help to resolve the current controversy on the topological nature of BiTeCl. (paper)

Graphene quantum dots probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

2017-11-15

Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Transition between scanning tunneling microscopy images of alkane derivatives on graphite

International Nuclear Information System (INIS)

Hibino, Masahiro; Tsuchiya, Hiroshi

2015-01-01

Graphical abstract: - Highlights: • SAMs of dialkyl sulfides form at the liquid–graphite interface. • STM contrast of molecules change reversibly between zigzag and aligned bright spot patterns. • The free energy for contrast change is smaller than the thermal energy (RT). • STM contrast change is caused by electronic effects and registry of the alkyl chains. - Abstract: Self-assembled monolayers of alkylated sulfides containing two alkyl chains and a sulfur atom positioned at the center of the molecules were studied on a graphite surface using scanning tunneling microscopy (STM). STM images of the closed-packed alkyl chains that extend linearly from the sulfur atoms change reversibly between a zigzag pattern and an aligned bright spot pattern on a time scale of minutes. The observation times of the zigzag and aligned bright spot patterns indicate that the difference between the free energies of these two stable molecular configurations with respect to the graphite surface is smaller than their thermal energies in the presence of a solvent, and 10 times smaller than the theoretical free energy between parallel and perpendicular configurations of the alkyl chains on graphite under vacuum. The change in the contrast of the STM images occurred owing to the electronic effects that depend on the registry of the alkyl chains on the graphite surface, and not by the classical observation of transfer between parallel and perpendicular orientations of alkyl chains on the surface.

Scanning probe microscopy in material science and biology

International Nuclear Information System (INIS)

Cricenti, A; Colonna, S; Girasole, M; Gori, P; Ronci, F; Longo, G; Dinarelli, S; Luce, M; Rinaldi, M; Ortenzi, M

2011-01-01

A review of the activity of scanning probe microscopy at our Institute is presented, going from instrumentation to software development of scanning tunnelling microscopy, atomic force microscopy and scanning near-field optical microscopy (SNOM). Some of the most important experiments in material science and biology performed by our group through the years with these SPM techniques will be presented. Finally, infrared applications by coupling a SNOM with a free electron laser will also be presented.

Investigation of the structural anisotropy in a self-assembling glycinate layer on Cu(100) by scanning tunneling microscopy and density functional theory calculations

Energy Technology Data Exchange (ETDEWEB)

Kuzmin, Mikhail [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Ioffe Physical Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021 (Russian Federation); Lahtonen, Kimmo; Vuori, Leena [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Sánchez-de-Armas, Rocío [Materials Theory Division, Department of Physics and Astronomy, Uppsala University, P.O. Box 516, S75120 Uppsala (Sweden); Hirsimäki, Mika, E-mail: mikahirsi@gmail.com [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Valden, Mika [Surface Science Laboratory, Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)

2017-07-01

Highlights: • Deprotonation reaction of glycine and self-assembly of glycinate is observed on Cu. • Bias-dependent scanning tunneling microscopy indicates two glycinate geometries. • Density functional theory calculations confirm the two non-identical configurations. • Non-identical adsorption explains the anisotropy in adlayer’s electronic structure. - Abstract: Self-assembling organic molecule-metal interfaces exhibiting free-electron like (FEL) states offers an attractive bottom-up approach to fabricating materials for molecular electronics. Accomplishing this, however, requires detailed understanding of the fundamental driving mechanisms behind the self-assembly process. For instance, it is still unresolved as to why the adsorption of glycine ([NH{sub 2}(CH{sub 2})COOH]) on isotropic Cu(100) single crystal surface leads, via deprotonation and self-assembly, to a glycinate ([NH{sub 2}(CH{sub 2})COO–]) layer that exhibits anisotropic FEL behavior. Here, we report on bias-dependent scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations for glycine adsorption on Cu(100) single crystal surface. We find that after physical vapor deposition (PVD) of glycine on Cu(100), glycinate self-assembles into an overlayer exhibiting c(2 × 4) and p(2 × 4) symmetries with non-identical adsorption sites. Our findings underscore the intricacy of electrical conductivity in nanomolecular organic overlayers and the critical role the structural anisotropy at molecule-metal interface plays in the fabrication of materials for molecular electronics.

Tunneling Mode of Scanning Electrochemical Microscopy: Probing Electrochemical Processes at Single Nanoparticles.

Science.gov (United States)

Sun, Tong; Wang, Dengchao; Mirkin, Michael V

2018-06-18

Electrochemical experiments at individual nanoparticles (NPs) can provide new insights into their structure-activity relationships. By using small nanoelectrodes as tips in a scanning electrochemical microscope (SECM), we recently imaged individual surface-bound 10-50 nm metal NPs. Herein, we introduce a new mode of SECM operation based on tunneling between the tip and a nanoparticle immobilized on the insulating surface. The obtained current vs. distance curves show the transition from the conventional feedback response to electron tunneling between the tip and the NP at separation distances of less than about 3 nm. In addition to high-resolution imaging of the NP topography, the tunneling mode enables measurement of the heterogeneous kinetics at a single NP without making an ohmic contact with it. The developed method should be useful for studying the effects of nanoparticle size and geometry on electrocatalytic activity in real-world applications. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

OpenAIRE

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-01-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

Science.gov (United States)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2014-04-15

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

International Nuclear Information System (INIS)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

2014-01-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Scanning tunneling microscopy: A powerful tool for surface analysis

International Nuclear Information System (INIS)

Walle, G.F.A. van de; Nelissen, B.J.; Soethout, L.L.; Kempen, H. van

1987-01-01

The invention of the Scanning Tunneling Microscope (STM) has opened a new area of surface analysis. A description of the principle of operation is given in this paper. Also the technical problems encountered and their solution are described. Two examples demonstrating the possibilities of the STM are presented: topographic and spectroscopic measurements on a stepped Ni (111) surface and photoconductive measurements on GaAs. (orig.)

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Science.gov (United States)

Szulczewski, Greg

2012-01-01

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

International Multidisciplinary Microscopy Congress

CERN Document Server

Oral, Ahmet; Ozer, Mehmet; InterM; INTERM2013

2014-01-01

The International Multidisciplinary Microscopy Congress (INTERM2013) was organized on October 10-13, 2013. The aim of the congress was to bring together scientists from various branches to discuss the latest advances in the field of microscopy. The contents of the congress have been broadened to a more "interdisciplinary" scope, so as to allow all scientists working on related subjects to participate and present their work. These proceedings include 39 peer-reviewed technical papers, submitted by leading academic and research institutions from over 12 countries and representing some of the most cutting-edge research available. The 39 papers are grouped into the following sections: - Applications of Microscopy in the Physical Sciences - Applications of Microscopy in the Biological Sciences

Formation of a Tunneling Product in the Photorearrangement of o-Nitrobenzaldehyde.

Science.gov (United States)

Gerbig, Dennis; Schreiner, Peter R

2017-08-01

The photochemical rearrangement of o-nitrobenzaldehyde to o-nitrosobenzoic acid, first reported in 1901, has been shown to proceed via a distinct ketene intermediate. In the course of matrix isolation experiments in various host materials at temperatures as low as 3 K, the ketene was re-investigated in its electronic and vibrational ground states. It was shown that hitherto unreported H-tunneling dominates its reactivity, with half-lives of a few minutes. Unexpectedly, the tunneling product is different from o-nitrosobenzoic acid formed in the photoprocess: Once prepared by irradiation, the ketene spontaneously rearranges to an isoxazolone via an intriguing mechanism initiated by H-tunneling. CCSD(T)/cc-pVTZ computations reveal that this isoxazolone is neither thermodynamically nor kinetically favored under the experimental conditions, and that formation of this unique tunneling product constitutes a remarkable and new example of tunneling control. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Well-ordered structure of methylene blue monolayers on Au(111) surface: electrochemical scanning tunneling microscopy studies.

Science.gov (United States)

Song, Yonghai; Wang, Li

2009-02-01

Well-ordered structure of methylene blue (MB) monolayers on Au(111) surface has been successfully obtained by controlling the substrate potential. Electrochemical scanning tunneling microscopy (ECSTM) examined the monolayers of MB on Au(111) in 0.1 M HClO(4) and showed long-range ordered, interweaved arrays of MB with quadratic symmetry on the substrate in the potential range of double-layer charging. High-resolution ECSTM image further revealed the details of the MB monolayers structure of c(5 x 5 radical 3)rect and the flat-lying orientation of ad-molecules. The dependence of molecular organization on the substrate potential and the formation mechanism of well-ordered structure on Au(111) surface were investigated in detail. The obtained well-ordered structure at the interface between a metal and an aqueous electrolyte might possibly be used as high-density device for signal memory and templates for the advanced nanopatterning of surfaces. (c) 2008 Wiley-Liss, Inc.

Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

International Nuclear Information System (INIS)

Liao, Q.; Zhang, H.J.; Wu, K.; Li, H.Y.; Bao, S.N.; He, P.

2010-01-01

The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moire pattern with a superstructure in a periodicity of about 30 A. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O 2 gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 x 1)O phase was observed after the graphene layer is fully removed by oxidation.

Analysis of oxygen and hydrogen adsorption on Nb(100) surface by scanning tunneling microscopy

International Nuclear Information System (INIS)

An, Bai; Wen, Mao; Fukuyama, Seiji; Yokogawa, Kiyoshi; Ichimura, Shingo; Yoshimura, Masamichi

2006-01-01

The surface structure of Nb(100) under the condition of cleaning, oxidation and hydrogen adsorption is observed by STM (scanning tunneling microscopy). The results obtained are followings; (1) (3 x 1)-O→(4 x 1)-O→c(2 x 2)-O→clean(1 x 1)structure was observed by atom level, and these atomic models of structures and STM images were verified by the first-principles calculations, (2) when the clean(1 x 1) structure exposed to hydrogen, dissociative adsorption of hydrogen was observed and Nb hydride cluster formed on the surface at room temperature. It was heated at about 450 - 670 K in UHV, the cluster decomposed into hydrogen and (1 x 1) structure with linear defect was formed. The c(2 x 2)-O structure by oxygen adsorption transformed into (1 x 1)-H structure with OH and Nb hydride cluster under hydrogen gas at room temperature. When it was heated in UHV at 640 K, OH desorbed from the surface and (1 x 1) structure with linear defect was generated. The surface of (3 x 1)-O structure was not changed by hydrogen. (S.Y.)

Surface structure and analysis with scanning tunneling microscopy and electron tunneling spectroscopy

International Nuclear Information System (INIS)

Coleman, R.V.

1992-01-01

This report discusses the following topics: charge-density waves in layer structures; charge-density waves in linear chain compounds; spectroscopy with the STM; STM studies of oxides; and development of atomic force microscopy. (LSP)

Surface species formed by the adsorption and dissociation of water molecules on Ru(0001) surface containing a small coverage of carbon atoms studied by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Dept of Materials Science and Engineering UCB; Dept of Applied Science and Technology, UCB; Institut de Ciencia de Materials de Barcelona, Barcelona, Spain; Instituto de Ciencia de Materiales de Madrid, Madrid, Spain; Department of Mechanical Engineering, Yale University; Salmeron, Miquel; Shimizu, Tomoko K.; Mugarza, Aitor; Cerda, Jorge I.; Heyde, Markus; Qi, Yabing; Schwarz, Udo D.; Ogletree, D. Frank; Salmeron, Miquel

2008-04-26

The adsorption and dissociation of water on a Ru(0001) surface containing a small amount ({le} 3 %) of carbon impurities was studied by scanning tunneling microscopy (STM). Various surface species are formed depending on the temperature. These include molecular H{sub 2}O, H{sub 2}O-C complexes, H, O, OH and CH. Clusters of either pure H{sub 2}O or mixed H{sub 2}O-OH species are also formed. Each of these species produces a characteristic contrast in the STM images and can be identified by experiment and by ab initio total energy calculations coupled with STM image simulations. Manipulation of individual species via excitation of vibrational modes with the tunneling electrons has been used as supporting evidence.

Single Electron Tunneling

International Nuclear Information System (INIS)

Ruggiero, Steven T.

2005-01-01

Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

High Pressure Scanning Tunneling Microscopy and High PressureX-ray Photoemission Spectroscopy Studies of Adsorbate Structure,Composition and Mobility during Catalytic Reactions on A Model SingleCrystal

Energy Technology Data Exchange (ETDEWEB)

Montano, Max O. [Univ. of California, Berkeley, CA (United States)

2006-01-01

Our research focuses on taking advantage of the ability of scanning tunneling microscopy (STM) to operate at high-temperatures and high-pressures while still providing real-time atomic resolution images. We also utilize high-pressure x-ray photoelectron spectroscopy (HPXPS) to monitor systems under identical conditions thus giving us chemical information to compare and contrast with the structural and dynamic data provided by STM.

Atomic structure of screw dislocations intersecting the Au(111) surface: A combined scanning tunneling microscopy and molecular dynamics study

DEFF Research Database (Denmark)

Engbæk, Jakob; Schiøtz, Jakob; Dahl-Madsen, Bjarke

2006-01-01

The atomic-scale structure of naturally occurring screw dislocations intersecting a Au(111) surface has been investigated both experimentally by scanning tunneling microscopy (STM) and theoretically using molecular dynamics (MD) simulations. The step profiles of 166 dislocations were measured using...... STM. Many of them exhibit noninteger step-height plateaus with different widths. Clear evidence was found for the existence of two different populations at the surface with distinct (narrowed or widened) partial-splitting widths. All findings are fully confirmed by the MD simulations. The MD...... simulations extend the STM-, i.e., surface-, investigation to the subsurface region. Due to this additional insight, we can explain the different partial-splitting widths as the result of the interaction between the partial dislocations and the surface....

Coating of tips for electrochemical scanning tunneling microscopy by means of silicon, magnesium, and tungsten oxides

Science.gov (United States)

Salerno, Marco

2010-09-01

Different combinations of metal tips and oxide coatings have been tested for possible operation in electrochemical scanning tunneling microscopy. Silicon and magnesium oxides have been thermally evaporated onto gold and platinum-iridium tips, respectively. Two different thickness values have been explored for both materials, namely, 40 and 120 nm for silicon oxide and 20 and 60 nm for magnesium oxide. Alternatively, tungsten oxide has been grown on tungsten tips via electrochemical anodization. In the latter case, to seek optimal results we have varied the pH of the anodizing electrolyte between one and four. The oxide coated tips have been first inspected by means of scanning electron microscopy equipped with microanalysis to determine the morphological results of the coating. Second, the coated tips have been electrically characterized ex situ for stability in time by means of cyclic voltammetry in 1 M aqueous KCl supporting electrolyte, both bare and supplemented with K3[Fe(CN)6] complex at 10 mM concentration in milliQ water as an analyte. Only the tungsten oxide coated tungsten tips have shown stable electrical behavior in the electrolyte. For these tips, the uncoated metal area has been estimated from the electrical current levels, and they have been successfully tested by imaging a gold grating in situ, which provided stable results for several hours. The successful tungsten oxide coating obtained at pH=4 has been assigned to the WO3 form.

Electromigration of single metal atoms observed by scanning tunneling microscopy

NARCIS (Netherlands)

Braun, K.-F.; Soe, W.H.; Flipse, C.F.J.

2007-01-01

The authors show in this letter that single metal atoms on a Ni(111) surface can be pushed by electromigration forces from a scanning tunneling microscope tip. This repulsive interaction is obsd. over a length scale of 6 nm. While for voltages above -300 mV the atoms are pulled by the microscope

The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

2014-10-01

The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: First principles calculations, scanning tunneling microscopy, and Auger spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Migaou, Amani; Guiltat, Mathilde; Payen, Kevin; Landa, Georges; Hémeryck, Anne, E-mail: anne.hemeryck@laas.fr [LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse (France); Sarpi, Brice; Daineche, Rachid; Vizzini, Sébastien [Aix Marseille University, IM2NP, Fac Sci St. Jérôme, F-13397 Marseille (France)

2016-05-21

First principles calculations, scanning tunneling microscopy, and Auger spectroscopy experiments of the adsorption of Mg on Ag(111) substrate are conducted. This detailed study reveals that an atomic scale controlled deposition of a metallic Mg monolayer perfectly wets the silver substrate without any alloy formation at the interface at room temperature. A liquid-like behavior of the Mg species on the Ag substrate is highlighted as no dot formation is observed when coverage increases. Finally a layer-by-layer growth mode of Mg on Ag(111) can be predicted, thanks to density functional theory calculations as observed experimentally.

Surface structure of YBa2Cu3O7-x probed by reversed-bias scanning tunneling microscopy

International Nuclear Information System (INIS)

Edwards, H.L.; Markert, J.T.; Lozanne, A.L.d.

1994-01-01

We report the results of scanning tunneling microscopy studies on high-quality single crystals of YBa 2 Cu 3 O 7-x (YBCO) which were cleaved along a basal plane in situ at 20 K prior to measurement. The initial results of a systematic study of the YBCO surface are presented. Reversed-bias images of the CuO chain layer reveal modulations 3.3±0.3|b|=1.3±0.1 nm in wavelength which change phase by 180 degree under bias polarity reversal along solid chains, and are invariant under bias polarity reversal at a point defect. Regions of sharp unit-cell-sized square corrugations with disordered islands are also observed. We interpret these new results in terms of our previous model [H. L. Edwards, J. T. Markert, and A. L. de Lozanne, Phys. Rev. Lett. 69, 2967 (1992)] of the cleaved YBCO surface

Atom probe field ion microscopy and related topics: A bibliography 1992

Energy Technology Data Exchange (ETDEWEB)

Russell, K.F.; Godfrey, R.D.; Miller, M.K.

1993-12-01

This bibliography contains citations of books, conference proceedings, journals, and patents published in 1992 on the following types of microscopy: atom probe field ion microscopy (108 items); field emission microscopy (101 items); and field ion microscopy (48 items). An addendum of 34 items missed in previous bibliographies is included.

Probing the location of displayed cytochrome b562 on amyloid by scanning tunnelling microscopy

Science.gov (United States)

Forman, C. J.; Wang, N.; Yang, Z. Y.; Mowat, C. G.; Jarvis, S.; Durkan, C.; Barker, P. D.

2013-05-01

Amyloid fibres displaying cytochrome b562 were probed using scanning tunnelling microscopy (STM) in vacuo. The cytochromes are electron transfer proteins containing a haem cofactor and could, in principle, mediate electron transfer between the tip and the gold substrate. If the core fibres were insulating and electron transfer within the 3D haem network was detected, then the electron transport properties of the fibre could be controlled by genetic engineering. Three kinds of STM images were obtained. At a low bias (<1.5 V) the fibres appeared as regions of low conductivity with no evidence of cytochrome mediated electron transfer. At a high bias, stable peaks in tunnelling current were observed for all three fibre species containing haem and one species of fibre that did not contain haem. In images of this kind, some of the current peaks were collinear and spaced around 10 nm apart over ranges longer than 100 nm, but background monomers complicate interpretation. Images of the third kind were rare (1 in 150 fibres); in these, fully conducting structures with the approximate dimensions of fibres were observed, suggesting the possibility of an intermittent conduction mechanism, for which a precedent exists in DNA. To test the conductivity, some fibres were immobilized with sputtered gold, and no evidence of conduction between the grains of gold was seen. In control experiments, a variation of monomeric cytochrome b562 was not detected by STM, which was attributed to low adhesion, whereas a monomeric multi-haem protein, GSU1996, was readily imaged. We conclude that the fibre superstructure may be intermittently conducting, that the cytochromes have been seen within the fibres and that they are too far apart for detectable current flow between sites to occur. We predict that GSU1996, being 10 nm long, is more likely to mediate successful electron transfer along the fibre as well as being more readily detectable when displayed from amyloid.

Commendable surface physics by means of scanning tunneling microscopy

International Nuclear Information System (INIS)

Besenbacher, F.; Laegsgaard, E.; Stensgard, I.

1995-01-01

The scanning tunneling microscope, developed at the Aarhus University (Denmark) allows taking several STM images per second, as opposite to other similar microscopes, where the typical scanning time is 0,5-1 min. This new system enables collecting of important information concerning dynamic processes on the surfaces. The Aarhus microscope is very stable, hence atomic resolution is achievable even on close-packed metallic surfaces, while it is difficult to achieve by means of the conventional STM. (EG)

Proceedings of 10. Conference on Electron Microscopy of Solids

International Nuclear Information System (INIS)

1999-01-01

The new technical solutions and methodical variants of electron microscopy i. e. transmission electron microscopy and scanning electron microscopy have been presented. Development of new methods and microscope constructions which became more and more sophisticated causes the progress in possible applications. The broad spectrum of such applications in metallurgy, materials science, chemical engineering, electronics, physical chemistry, solid state physics, mineralogy and other branches of science and technique have been performed and discussed at the conference

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

Directory of Open Access Journals (Sweden)

Alex Hayat

2012-12-01

Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Tip-Loading, Force-Dependent Tunneling Behavior in Alkanethiol Self-Assembled Monolayers Studied Through Conducting Atomic Force Microscopy

International Nuclear Information System (INIS)

Lee, Min Hyung; Song, Hyun Wook

2013-01-01

The force-dependent tunneling transport in metal/alkanethiol/metal junctions was examined using CAFM. Tunneling current and current density through alkanethiol SAMs increased with increasing tip-loading force in CAFM, which suggests that a potential change in geometry of the molecules under the tip loads influences the transport properties of alkanethiol SAMs. Enhanced intermolecular tunneling transport in the tilted molecular configuration under tip-loading effect is likely responsible for such an increase in tunneling current density. We also demonstrated that through-bond tunneling is a more efficient pathway in alkanethiol SAMs than are intermolecular chain-to-chain pathways, by demonstrating a dependence of current density on the associated tunneling distances. We report a tip-loading, force-dependent tunneling behavior in alkanethiol SAMs using CAFM. A variable tip-loading force applies to alkanethiol SAMs with a standard AFM feedback, and current(I)-voltage(V) characteristics are simultaneously measured while varying the loading forces. In particular, we observe how a tip-loading force in CAFM influences the transport properties of alkanethiol SAMs

Directional scanning tunneling spectroscopy in MgB2

International Nuclear Information System (INIS)

Iavarone, M.; Karapetrov, G.; Koshelev, A.E.; Kwok, W.K.; Crabtree, G.W.; Hinks, D.G.; Cook, R.; Kang, W.N.; Choi, E.M.; Kim, H.J.; Lee, S.I.

2003-01-01

The superconductivity in MgB 2 has a two-band character with the dominating band having a 2D character and the second band being isotropic in the three dimensions. We use tunneling microscopy and spectroscopy to reveal the two distinct energy gaps at Δ 1 =2.3 meV and Δ 2 =7.1 meV. Different spectral weights of the partial superconducting density of states are a reflection of different tunneling directions in this multi-band system. The results are consistent with the existence of two-band superconductivity in the presence of strong interband superconducting pair interaction and quasiparticle scattering. The temperature evolution of the tunneling spectra shows both gaps vanishing at the bulk T c

Atomic site tunneling spectroscopy on high-Tc superconductors

International Nuclear Information System (INIS)

Hasegawa, T.; Nantoh, M.; Takagi, A.; Yamaguchi, W.; Ogino, M.; Kawasaki, M.

1994-01-01

Superconducting gap structures of Bi 2 Sr 2 CaCu 2 O y (BSCCO) and YBa 2 Cu 3 O y (YBCO) have been probed by scanning tunneling microscopy (STM) at cryogenic temperatures. The tunneling conductance curves observed on bulk single crystals of BSCCO and epitaxial thin films of YBCO revealed clear obershooting peaks and flat bottom regions around V=0 with quite low zero-bias conductances of ∝1%. Since the electron tunneling process in STM is essentially incoherent, the present observation is favored by the s-wave pairing mechanism. However, the conductance curves were found to be substantially smeared in comparison with the conventional spectra predicted in the BCS (isotropic s-wave) superconductors, suggesting gap anisotropy. (orig.)

First-principles theory of inelastic currents in a scanning tunneling microscope

DEFF Research Database (Denmark)

Stokbro, Kurt; Hu, Ben Yu-Kuang; Thirstrup, C.

1998-01-01

A first-principles theory of inelastic tunneling between a model probe tip and an atom adsorbed on a surface is presented, extending the elastic tunneling theory of Tersoff and Hamann. The inelastic current is proportional to the change in the local density of states at the center of the tip due...... to the addition of the adsorbate. We use the theory to investigate the vibrational heating of an adsorbate below a scanning tunneling microscopy tip. We calculate the desorption rate of PI from Si(100)-H(2 X 1) as a function of the sample bias and tunnel current, and find excellent a,agreement with recent...

Three-dimensional scanning force/tunneling spectroscopy at room temperature

International Nuclear Information System (INIS)

Sugimoto, Yoshiaki; Ueda, Keiichi; Abe, Masayuki; Morita, Seizo

2012-01-01

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated. (paper)

"We Actually Saw Atoms with Our Own Eyes": Conceptions and Convictions in Using the Scanning Tunneling Microscope in Junior High School

Science.gov (United States)

Margel, Hannah; Eylon, Bat-Sheva; Scherz, Zahava

2004-01-01

The feasibility and the potential contribution of the scanning tunneling microscopy (STM) in junior high school (JHS) as an instructional tool for learning the particulate nature of matter is described. The use and power of new technologies can probably be demonstrated by the scanning tunneling microscopy (STM).

Structure, Mobility, and Composition of Transition Metal Catalyst Surfaces. High-Pressure Scanning Tunneling Microscopy and Ambient-Pressure X-ray Photoelectron Spectroscopy Studies

Energy Technology Data Exchange (ETDEWEB)

Zhu, Zhongwei [Univ. of California, Berkeley, CA (United States)

2013-12-06

Surface structure, mobility, and composition of transition metal catalysts were studied by high-pressure scanning tunneling microscopy (HP-STM) and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) at high gas pressures. HP-STM makes it possible to determine the atomic or molecular rearrangement at catalyst surfaces, particularly at the low-coordinated active surface sites. AP-XPS monitors changes in elemental composition and chemical states of catalysts in response to variations in gas environments. Stepped Pt and Cu single crystals, the hexagonally reconstructed Pt(100) single crystal, and Pt-based bimetallic nanoparticles with controlled size, shape and composition, were employed as the model catalysts for experiments in this thesis.

New approach towards imaging λ-DNA using scanning tunneling ...

Indian Academy of Sciences (India)

Wintec

spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap ... DNA; scanning tunneling microscopy; Langmuir Blodget technique; silanization. 1. ... assembled monolayer (SAM) of C-8 silane gave stable.

Near-field optical microscopy with a scanning tunneling microscope

International Nuclear Information System (INIS)

Barbara, A.; Lopez-Rios, T.; Quemerais, P.

2005-01-01

A homemade apertureless near-field optical microscope using a scanning tunneling microscope (STM) is described. The experimental set-up simultaneously provides optical and topographic images of the sample. Technical details and features of the set-up are presented, together with results demonstrating the sub-wavelength resolution achieved as well as its sensitivity to dielectric contrasts. We show that the use of a STM permits to precisely control very small distances between the tip and the sample which is a great advantage to excite localized optical resonances between the tip and the surface

Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

Directory of Open Access Journals (Sweden)

H. Matsuyama

2016-03-01

Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

Energy Technology Data Exchange (ETDEWEB)

Matsuyama, H., E-mail: matsu@phys.sci.hokudai.ac.jp [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Nara, D.; Kageyama, R.; Honda, K.; Sato, T.; Kusanagi, K. [Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Srinivasan, E. [Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan); Koike, K. [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan)

2016-03-15

We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM) in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

Scanning probe microscopy experiments in microgravity

International Nuclear Information System (INIS)

Drobek, Tanja; Reiter, Michael; Heckl, Wolfgang M.

2004-01-01

The scanning probe microscopy setups are small, lightweight and do not require vacuum or high voltage supply. In addition, samples can be investigated directly without further preparation. Therefore, these techniques are well-suited for applications in space, in particular, for operation on the International Space Station (ISS) or for high resolution microscopy on planetary missions. A feasibility study for a scanning tunneling microscopy setup was carried out on a parabolic flight campaign in November 2001 in order to test the technical setup for microgravity applications. With a pocket-size design microscope, a graphite surface was imaged under ambient conditions. Atomic resolution was achieved although the quality of the images was inferior in comparison to laboratory conditions. Improvements for future scanning probe microscopy experiments in microgravity are suggested

3rd International Multidisciplinary Microscopy and Microanalysis Congress

CERN Document Server

Oral, Zehra

2017-01-01

The 3rd International Multidisciplinary Microscopy Congress (InterM2015), held from 19 to 23 October 2015, focused on the latest developments concerning applications of microscopy in the biological, physical and chemical sciences at all dimensional scales, advances in instrumentation, techniques in and educational materials on microscopy. These proceedings gather 17 peer-reviewed technical papers submitted by leading academic and research institutions from nine countries and representing some of the most cutting-edge research available.

Two-Dimensional Cysteine and Cystine Cluster Networks on Au(111) Disclosed by Voltammetry and in Situ Scanning Tunneling Microscopy

DEFF Research Database (Denmark)

Zhang, Jingdong; Chi, Qijin; Nielsen, Jens Ulrik

2000-01-01

Microscopic structures for molecular monolayers of L-cysteine and L-cystine assembled on Au(111) have been disclosed by employing electrochemistry and in situ scanning tunneling microscopy (STM). HighresolutionSTMimages show that the adlayers of both cyteine and cystine exhibit highly......-ordered networklike clusters with (3x3 6)R30° structure. By combining the surface coverage estimated from voltammetric data, each cluster is demonstrated to include six individual cysteine molecules or three cystine molecules. As a comparison, no cluster structure is observed for the 1-butanethiol adlayer prepared...... and examined under the same conditions as those for cysteine and cystine. This suggests that intermolecular and intramolecular hydrogen bonds among adsorbed cysteine or cystine molecules could be responsible for the origin of the cluster-network structures for the adlayers. Several models are proposed and used...

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

Science.gov (United States)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

Science.gov (United States)

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

2011-01-01

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

DEFF Research Database (Denmark)

Chi, Qijin; Farver, O; Ulstrup, Jens

2005-01-01

on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...

Dynamics of a nanoscale Josephson junction probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Ast, Christian R.; Jaeck, Berthold; Eltschka, Matthias; Etzkorn, Markus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Kern, Klaus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Institut de Physique de la Matiere Condensee, EPFL, Lausanne (Switzerland)

2015-07-01

The Josephson effect is an intriguing phenomenon as it presents an interplay of different energy scales, such as the Josephson energy ε{sub J} (critical current), charging energy ε{sub C}, and temperature T. Using a scanning tunneling microscope (STM) operating at a base temperature of 15 mK, we create a nanoscale superconductor-vacuum-superconductor tunnel junction in an extremely underdamped regime (Q>>10). We observe extremely small retrapping currents also owing to strongly reduced ohmic losses in the well-developed superconducting gaps. While formally operating in the zero temperature limit, i.e. the temperature T is smaller than the Josephson plasma frequency ω{sub J} (k{sub B}T<<ℎω{sub J}=√(8ε{sub J}ε{sub C})), experimentally other phenomena, such as stray photons, may perturb the Josephson junction, leading to an effectively higher temperature. The dynamics of the Josephson junction can be addressed experimentally by looking at characteristic parameters, such as the switching current and the retrapping current. We discuss the dynamics of the Josephson junction in the context of reaching the zero temperature limit.

Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

Science.gov (United States)

Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

2009-12-01

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

Atom probe field ion microscopy and related topics: A bibliography 1989

International Nuclear Information System (INIS)

Miller, M.K.; Hawkins, A.R.; Russell, K.F.

1990-12-01

This bibliography includes references related to the following topics: atom probe field ion microscopy (APFIM), field ion spectroscopy (FIM), field emission microscopy (FEM), liquid metal ion sources (LMIS), scanning tunneling microscopy (STM), and theory. Technique-orientated studies and applications are included. This bibliography covers the period 1989. The references contained in this document were compiled from a variety of sources including computer searches and personal lists of publications

Monitoring Si growth on Ag(111) with scanning tunneling microscopy reveals that silicene structure involves silver atoms

International Nuclear Information System (INIS)

Prévot, G.; Bernard, R.; Cruguel, H.; Borensztein, Y.

2014-01-01

Using scanning tunneling microscopy (STM), the elaboration of the so-called silicene layer on Ag(111) is monitored in real time during Si evaporation at different temperatures. It is shown that the growth of silicene is accompanied by the release of about 65% of the surface Ag atoms from the Si covered areas. We observe that Si islands develop on the Ag terraces and Si strips at the Ag step edges, progressively forming ordered (4×4), (√(13)×√(13)) R13.9°, and dotted phases. Meanwhile, displaced Ag atoms group to develop additional bare Ag terraces growing round the Si islands from the pristine Ag step edges. This indicates a strong interaction between Si and Ag atoms, with an important modification of the Ag substrate beneath the surface layer. This observation is in contradiction with the picture of a silicene layer weakly interacting with the unreconstructed Ag substrate, and strongly indicates that the structure of silicene on Ag(111) corresponds either to a Si-Ag surface alloy or to a Si plane covered with Ag atoms

The (2 × 2) tunnels structured manganese dioxide nanorods with α phase for lithium air batteries

Science.gov (United States)

Ghouri, Zafar Khan; Zahoor, Awan; Barakat, Nasser A. M.; Alsoufi, Mohammad S.; Bawazeer, Tahani M.; Mohamed, Ahmed F.; Kim, Hak Yong

2016-02-01

The (2 × 2) tunnels structured manganese dioxide nanorods with α phase (α-MnO2) are synthesized via simplistic hydrothermal method at low temperature. The obtained tunnels structured α-MnO2 nanorods are characterized by, Transmission electron microscopy, Scanning electron microscopy, and X-ray diffraction techniques. The oxygen reduction reaction (ORR) activity was studied by cyclic voltammetry and rotating ring-disc electrode voltammetry techniques in alkaline media. Moreover; the highly electrocatalytic tunnels structured α-MnO2 nanorods were then also applied as cathode in rechargeable Li-O2 cells. The Li-O2 cells exhibited initial discharge capacity as high as ∼4000 mAh/g with the tunnels structured α-MnO2 nanorods which was double the original capacity of the cells without any catalyst. Also we obtained 100% round trip efficiency upon cycling with limited capacity for more than 50 cycles.

Microscopy image segmentation tool: Robust image data analysis

Energy Technology Data Exchange (ETDEWEB)

Valmianski, Ilya, E-mail: ivalmian@ucsd.edu; Monton, Carlos; Schuller, Ivan K. [Department of Physics and Center for Advanced Nanoscience, University of California San Diego, 9500 Gilman Drive, La Jolla, California 92093 (United States)

2014-03-15

We present a software package called Microscopy Image Segmentation Tool (MIST). MIST is designed for analysis of microscopy images which contain large collections of small regions of interest (ROIs). Originally developed for analysis of porous anodic alumina scanning electron images, MIST capabilities have been expanded to allow use in a large variety of problems including analysis of biological tissue, inorganic and organic film grain structure, as well as nano- and meso-scopic structures. MIST provides a robust segmentation algorithm for the ROIs, includes many useful analysis capabilities, and is highly flexible allowing incorporation of specialized user developed analysis. We describe the unique advantages MIST has over existing analysis software. In addition, we present a number of diverse applications to scanning electron microscopy, atomic force microscopy, magnetic force microscopy, scanning tunneling microscopy, and fluorescent confocal laser scanning microscopy.

Microscopy image segmentation tool: Robust image data analysis

Science.gov (United States)

Valmianski, Ilya; Monton, Carlos; Schuller, Ivan K.

2014-03-01

We present a software package called Microscopy Image Segmentation Tool (MIST). MIST is designed for analysis of microscopy images which contain large collections of small regions of interest (ROIs). Originally developed for analysis of porous anodic alumina scanning electron images, MIST capabilities have been expanded to allow use in a large variety of problems including analysis of biological tissue, inorganic and organic film grain structure, as well as nano- and meso-scopic structures. MIST provides a robust segmentation algorithm for the ROIs, includes many useful analysis capabilities, and is highly flexible allowing incorporation of specialized user developed analysis. We describe the unique advantages MIST has over existing analysis software. In addition, we present a number of diverse applications to scanning electron microscopy, atomic force microscopy, magnetic force microscopy, scanning tunneling microscopy, and fluorescent confocal laser scanning microscopy.

Microscopy image segmentation tool: Robust image data analysis

International Nuclear Information System (INIS)

Valmianski, Ilya; Monton, Carlos; Schuller, Ivan K.

2014-01-01

We present a software package called Microscopy Image Segmentation Tool (MIST). MIST is designed for analysis of microscopy images which contain large collections of small regions of interest (ROIs). Originally developed for analysis of porous anodic alumina scanning electron images, MIST capabilities have been expanded to allow use in a large variety of problems including analysis of biological tissue, inorganic and organic film grain structure, as well as nano- and meso-scopic structures. MIST provides a robust segmentation algorithm for the ROIs, includes many useful analysis capabilities, and is highly flexible allowing incorporation of specialized user developed analysis. We describe the unique advantages MIST has over existing analysis software. In addition, we present a number of diverse applications to scanning electron microscopy, atomic force microscopy, magnetic force microscopy, scanning tunneling microscopy, and fluorescent confocal laser scanning microscopy

An experimental study of furan adsorption and decomposition on vicinal palladium surfaces using scanning tunneling microscopy

Science.gov (United States)

Loui, A.; Chiang, S.

2018-04-01

The intact adsorption and decomposition of furan (C4H4O) on vicinal palladium surfaces with (111)-oriented terraces has been studied by scanning tunneling microscopy (STM) over a range of temperatures. STM images at 225 K show that furan molecules lie flat and prefer to adsorb at upper step edges. At 225 K, furan molecules adsorbed on "narrow" terraces of 20 to 45 Å in width appear to diffuse more readily than those adsorbed on "wide" terraces of 160 to 220 Å. A distinct population of smaller features appears in STM images on "narrow" terraces at 288 K and on "wide" terraces at 415 K and is identified with the C3H3 decomposition product, agreeing with prior studies which demonstrated that furan dissociates on Pd(111) to yield carbon monoxide (CO) and a C3H3 moiety in the 280 to 320 K range. Based on our direct visualization of this reaction using STM, we propose a spatial mechanism in which adsorption of furan at upper step edges allows catalysis of the dissociation, followed by diffusion of the product to lower step edges.

Investigations on tunneling and kissing bond defects in FSW joints for dissimilar aluminum alloys

Energy Technology Data Exchange (ETDEWEB)

Khan, Noor Zaman, E-mail: noor_0315@yahoo.com [Department of Mechanical Engineering, Jamia Millia Islamia (A Central University), New Delhi (India); Siddiquee, Arshad Noor; Khan, Zahid A. [Department of Mechanical Engineering, Jamia Millia Islamia (A Central University), New Delhi (India); Shihab, Suha K. [Department of Mechanical Engineering, Engineering College, Diyala University, Diyala (Iraq)

2015-11-05

In this paper an attempt has been made to investigate the effect of two Friction Stir Welding (FSW) parameters i.e. tool pin offset and tool plunge depth on the formation of defects such as tunnel (tunneling defect) and kissing bond (KB) during welding of dissimilar aluminum alloys. 4.75 mm thick plates of AA5083-H116 and AA6063-T6 were welded using a novel work-fixture developed in-house which, apart from clamping the plated also imparted continuous variation of offset on both side of the faying line. The tunneling defect was modeled as a function of offset and plunge depth. The welds were characterised using optical microscopy (OM), scanning electron microscopy (SEM) and mechanical testing. The causes of such defects have been analyzed and discussed and recommendations have been made to prevent their occurrence. The findings of the study have revealed that the tunneling defects are formed at all offset (including zero offset) values towards stronger material (advancing side). And the cross-section of the tunnel varied with the amount of offset. Further, KBs are formed at the interface for all pin offset values except 0.5 mm towards weaker material and high plunge depth resulting in the poor mechanical properties. - Highlights: • Two dissimilar aluminum alloys are welded using FSW. • Formation of kissing bond and tunneling defects are investigated. • Defects are formed at pin offsets towards stronger material and also without offset. • The size of tunnel reduces significantly by increasing the plunge depth. • Tool pin offset towards weaker material prevent tunneling defects.

Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

International Nuclear Information System (INIS)

Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.

2007-01-01

Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots

The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

Science.gov (United States)

Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

2010-01-01

The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

Scanning tunneling microscopy and spectroscopy studies of the heavy-electron superconductor TlNi2Se2

Science.gov (United States)

Wilfert, Stefan; Schmitt, Martin; Schmidt, Henrik; Mauerer, Tobias; Sessi, Paolo; Wang, Hangdong; Mao, Qianhui; Fang, Minghu; Bode, Matthias

2018-01-01

We report on the structural and superconducting electronic properties of the heavy-electron superconductor TlNi2Se2 . By using a variable-temperature scanning tunneling microscopy (VT-STM) the coexistence of (√{2 }×√{2 }) R 45∘ and (2 ×1 ) surface reconstructions is observed. Similar to earlier observations on the "122" family of Fe-based superconductors, we find that their respective surface fraction strongly depends on the temperature during cleavage, the measurement temperature, and the sample's history. Cleaving at low temperature predominantly results in the (√{2 }×√{2 }) R 45∘ -reconstructed surface. A detailed analysis of the (√{2 }×√{2 }) R 45∘ -reconstructed domains identifies (2 ×1 ) -ordered dimers, tertramers, and higher order even multimers as domain walls. Higher cleaving temperatures and the warming of low-temperature-cleaved samples increases the relative weight of the (2 ×1 ) surface reconstruction. By slowly increasing the sample temperature Ts inside the VT-STM we find that the (√{2 }×√{2 }) R 45∘ surface reconstructions transforms into the (2 ×1 ) structure at Ts=123 K. We identify the polar nature of the TlNi2Se2 (001) surface as the most probable driving mechanism of the two reconstructions, as both lead to a charge density ρ =0.5 e- , thereby avoiding divergent electrostatic potentials and the resulting "polar catastrophe." Low-temperature scanning tunneling spectroscopy (STS) performed with normal metal and superconducting probe tips shows a superconducting gap which is best fit with an isotropic s wave. We could not detect any correlation between the local surface reconstruction, suggesting that the superconductivity is predominantly governed by TlNi2Se2 bulk properties. Correspondingly, temperature- and field-dependent data reveal that both the critical temperature and critical magnetic field are in good agreement with bulk values obtained earlier from transport measurements. In the superconducting state

Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

Science.gov (United States)

Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

2009-10-09

Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

International Nuclear Information System (INIS)

Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.

2001-01-01

Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni 80 Fe 20 /Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. [copyright] 2001 American Institute of Physics

Scanning Tunneling Spectroscopy of Potassium on Graphene

Science.gov (United States)

Cormode, Daniel; Leroy, Brian; Yankowitz, Matthew

2012-02-01

We investigate the effect of charged impurities on the electronic properties of large single crystal CVD grown graphene using scanning tunneling microscopy. Mono- and multilayer crystals were prepared by transferring graphene from copper onto exfoliated boron nitride flakes on 300 nm SiO2 substrates. The boron nitride provides an ultra flat surface for the graphene. Potassium atoms are controllably deposited on the graphene at low temperature by heating a nearby getter source. Scanning tunneling spectroscopy and transport measurements were performed in ultra high vacuum at 4.5 K. Transport measurements demonstrate the shifting of the Dirac point as the samples are doped, while STM measurements demonstrate the size, arrangement and local electronic influence of the potassium atoms.

Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

Science.gov (United States)

Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

2010-07-23

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

Simultaneous topographic and elemental chemical and magnetic contrast in scanning tunneling microscopy

Science.gov (United States)

Rose, Volker; Preissner, Curt A; Hla, Saw-Wai; Wang, Kangkang; Rosenmann, Daniel

2014-09-30

A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably.

Switching and sensing spin states of co-porphyrin in bimolecular reactions on Au111 using scanning tunneling microscopy.

Science.gov (United States)

Kim, Howon; Chang, Yun Hee; Lee, Soon-Hyeong; Kim, Yong-Hyun; Kahng, Se-Jong

2013-10-22

Controlling and sensing spin states of magnetic molecules at the single-molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of Co-porphyrin on Au(111) can be reversibly switched over by binding and unbinding of the NO molecule and can be sensed using scanning tunneling microscopy and spectroscopy (STM and STS). Before NO exposure, Co-porphryin showed a clear zero-bias peak, a signature of Kondo effect in STS, whereas after NO exposures, it formed a molecular complex, NO-Co-porphyrin, that did not show any zero-bias feature, implying that the Kondo effect was switched off by binding of NO. The Kondo effect could be switched back on by unbinding of NO through single-molecule manipulation or thermal desorption. Our density functional theory calculation results explain the observations with pairing of unpaired spins in dz(2) and ppπ* orbitals of Co-porphyrin and NO, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of enormous variety of bimolecular binding and unbinding reactions on metallic surfaces.

In situ scanning tunneling microscopy study of Ca-modified rutile TiO2(110 in bulk water

Directory of Open Access Journals (Sweden)

Giulia Serrano

2015-02-01

Full Text Available Despite the rising technological interest in the use of calcium-modified TiO2 surfaces in biomedical implants, the Ca/TiO2 interface has not been studied in an aqueous environment. This investigation is the first report on the use of in situ scanning tunneling microscopy (STM to study calcium-modified rutile TiO2(110 surfaces immersed in high purity water. The TiO2 surface was prepared under ultrahigh vacuum (UHV with repeated sputtering/annealing cycles. Low energy electron diffraction (LEED analysis shows a pattern typical for the surface segregation of calcium, which is present as an impurity on the TiO2 bulk. In situ STM images of the surface in bulk water exhibit one-dimensional rows of segregated calcium regularly aligned with the [001] crystal direction. The in situ-characterized morphology and structure of this Ca-modified TiO2 surface are discussed and compared with UHV-STM results from the literature. Prolonged immersion (two days in the liquid leads to degradation of the overlayer, resulting in a disordered surface. X-ray photoelectron spectroscopy, performed after immersion in water, confirms the presence of calcium.

Observation of diamond turned OFHC copper using Scanning Tunneling Microscopy

Energy Technology Data Exchange (ETDEWEB)

Grigg, D.A.; Russell, P.E.; Dow, T.A.

1988-12-01

Diamond turned OFHC copper samples have been observed within the past few months using the Scanning Tunneling Microscope. Initial results have shown evidence of artifacts which may be used to better understand the diamond turning process. The STM`s high resolution capability and three dimensional data representation allows observation and study of surface features unobtainable with conventional profilometry systems. Also, the STM offers a better quantitative means by which to analyze surface structures than the SEM. This paper discusses findings on several diamond turned OFHC copper samples having different cutting conditions. Each sample has been cross referenced using STM and SEM.

Scanning tunneling microscopy: Superconductor materials. January 1984-June 1990 (A Bibliography from the INSPEC: Information Services for the Physics and Engineering Communities data base). Report for January 1984-June 1990

International Nuclear Information System (INIS)

1990-06-01

This bibliography contains citations concerning the development and utilization of scanning tunneling microscopy (STM) in surface topography analysis of superconductor materials. The citations cover the principles, operation, and implementation of STM. Specific materials analyzed by STM include bismuth, strontium, calcium, copper, yttrium, and barium. Some organic materials for superconductors are also analyzed. A separate Published Search covers the use of STM for analysis of semiconducting materials. (Contains 113 citations fully indexed and including a title list.)

Scanning tunneling microscopy in TTF-TCNQ: Phase and amplitude modulated charge density waves

DEFF Research Database (Denmark)

Wang, Z.Z.; Gorard, J.C.; Pasquier, C.

2003-01-01

Charge density waves (CDWs) have been studied at the surface of a cleaved tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) single crystal using a low temperature scanning tunneling microscope (STM) under ultrahigh-vacuum conditions, between 300 and 33 K with molecular resolution. All CDW...

Scanning tunneling microscopy and atomic force microscopy: application to biology and technology.

Science.gov (United States)

Hansma, P K; Elings, V B; Marti, O; Bracker, C E

1988-10-14

The scanning tunneling microscope (STM) and the atomic force microscope (AFM) are scanning probe microscopes capable of resolving surface detail down to the atomic level. The potential of these microscopes for revealing subtle details of structure is illustrated by atomic resolution images including graphite, an organic conductor, an insulating layered compound, and individual adsorbed oxygen atoms on a semiconductor. Application of the STM for imaging biological materials directly has been hampered by the poor electron conductivity of most biological samples. The use of thin conductive metal coatings and replicas has made it possible to image some biological samples, as indicated by recently obtained images of a recA-DNA complex, a phospholipid bilayer, and an enzyme crystal. The potential of the AFM, which does not require a conductive sample, is shown with molecular resolution images of a nonconducting organic monolayer and an amino acid crystal that reveals individual methyl groups on the ends of the amino acids. Applications of these new microscopes to technology are demonstrated with images of an optical disk stamper, a diffraction grating, a thin-film magnetic recording head, and a diamond cutting tool. The STM has even been used to improve the quality of diffraction gratings and magnetic recording heads.

Giant inelastic tunneling in epitaxial graphene mediated by localized states

NARCIS (Netherlands)

Cervenka, J.; Ruit, van de K.; Flipse, C.F.J.

2010-01-01

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have

Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

DEFF Research Database (Denmark)

Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

2017-01-01

scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.......Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...

Surface confined metallosupramolecular architectures: formation and scanning tunneling microscopy characterization.

Science.gov (United States)

Li, Shan-Shan; Northrop, Brian H; Yuan, Qun-Hui; Wan, Li-Jun; Stang, Peter J

2009-02-17

Metallosupramolecular compounds have attracted a great deal of attention over the past two decades largely because of their unique, highly complex structural characteristics and their potential electronic, magnetic, optical, and catalytic properties. These molecules can be prepared with relative ease using coordination-driven self-assembly techniques. In particular, the use of electron-poor square-planar Pt(II) transition metals in conjunction with rigid, electron-rich pyridyl donors has enabled the spontaneous self-assembly of a rich library of 2D metallacyclic and 3D metallacage assemblies via the directional-bonding approach. With this progress in the preparation and characterization of metallosupramolecules, researchers have now turned their attention toward fully exploring and developing their materials properties. Assembling metallosupramolecular compounds on solid supports represents a vitally important step toward developing their materials properties. Surfaces provide a means of uniformly aligning and orienting these highly symmetric metallacycles and metallacages. This uniformity increases the level of coherence between molecules above that which can be achieved in the solution phase and provides a way to integrate adsorbed layers, or adlayers, into a solid-state materials setting. The dynamic nature of kinetically labile Pt(II)-N coordination bonds requires us to adjust deposition and imaging conditions to retain the assemblies' stability. Toward these aims, we have used scanning tunneling microscopy (STM) to image these adlayers and to understand the factors that govern surface self-assembly and the interactions that influence their structure and stability. This Account describes our efforts to deposit 2D rectangular and square metallacycles and 3D trigonal bipyramidal and chiral trigonal prism metallacages on highly oriented pyrolytic graphite (HOPG) and Au(111) substrates to give intact assemblies and ordered adlayers. We have investigated the effects

Co on Pt(111) studied by spin-polarized scanning tunneling microscopy and spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Meier, F.K.

2006-07-01

In this thesis the electronic properties of the bare Pt(111) surface, the structural, electronic, and magnetic properties of monolayer and double-layer high Co nanostructures as well as the spin-averaged electronic structure of single Co atoms on Pt(111) were studied by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The experiments on the bare Pt(111) surface and on single Co atoms have been performed in an STM facility operating at temperatures of down to 0.3 K and at magnetic fields of up to 14 T under ultra-high vacuum conditions. The facility has been taken into operation within the time period of this thesis and its specifications were tested by STS measurements. These characterization measurements show a very high stability of the tunneling junction and an energy resolution of about 100 {mu}eV, which is close to the thermal limit. The investigation of the electronic structure of the bare Pt(111) surface reveals the existence of an unoccupied surface state. By a comparison of the measured dispersion to first-principles electronic structure calculations the state is assigned to an sp-derived surface band at the lower boundary of the projected bulk band gap. The surface state exhibits a strong spin-orbit coupling induced spin splitting. The close vicinity to the bulk bands leads to a strong linear contribution to the dispersion and thus to a deviant appearance in the density of states in comparison to the surface states of the (111) surfaces of noble metals. A detailed study of Co monolayer and double-layer nanostructures on the Pt(111) surface shows that both kinds of nanostructures exhibit a highly inhomogeneous electronic structure which changes at the scale of only a few Aa due to a strong stacking dependence with respect to the Pt(111) substrate. With the help of first principles calculations the different spectroscopic appearance for Co atoms within the Co monolayer is assigned to a stacking dependent hybridization of Co states

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

Science.gov (United States)

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

A scanning tunneling microscope for a dilution refrigerator.

Science.gov (United States)

Marz, M; Goll, G; Löhneysen, H v

2010-04-01

We present the main features of a home-built scanning tunneling microscope that has been attached to the mixing chamber of a dilution refrigerator. It allows scanning tunneling microscopy and spectroscopy measurements down to the base temperature of the cryostat, T approximately 30 mK, and in applied magnetic fields up to 13 T. The topography of both highly ordered pyrolytic graphite and the dichalcogenide superconductor NbSe(2) has been imaged with atomic resolution down to T approximately 50 mK as determined from a resistance thermometer adjacent to the sample. As a test for a successful operation in magnetic fields, the flux-line lattice of superconducting NbSe(2) in low magnetic fields has been studied. The lattice constant of the Abrikosov lattice shows the expected field dependence proportional to 1/square root of B and measurements in the scanning tunneling spectroscopy mode clearly show the superconductive density of states with Andreev bound states in the vortex core.

Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

DEFF Research Database (Denmark)

Walzer, K.; Marx, E.; Greenham, N.C.

2003-01-01

We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... of nanocrystals. STS measurements showed rectifying behaviour, with high currents at the opposite sample bias to that previously observed for CdSe nanocrystals adsorbed on Si substrates. We explain the rectifying behaviour by considering the interaction between the electronic states of the nanocrystals...

Quantum nature of protons in water probed by scanning tunneling microscopy and spectroscopy

Science.gov (United States)

Guo, Jing; Lü, Jing-Tao; Feng, Yexin; Chen, Ji; Peng, Jinbo; Lin, Zeren; Meng, Xiangzhi; Wang, Zhichang; Li, Xin-Zheng; Wang, En-Ge; Jiang, Ying; Jing-Tao Lü Team; Xin-Zheng Li Team

The complexity of hydrogen-bonding interaction largely arises from the quantum nature of light hydrogen nuclei, which has remained elusive for decades. Here we report the direct assessment of nuclear quantum effects on the strength of a single hydrogen bond formed at a water-salt interface, using tip-enhanced inelastic electron tunneling spectroscopy (IETS) based on a low-temperature scanning tunneling microscope (STM). The IETS signals are resonantly enhanced by gating the frontier orbitals of water via a chlorine-terminated STM tip, such that the hydrogen-bonding strength can be determined with unprecedentedly high accuracy from the redshift in the O-H stretching frequency of water. Isotopic substitution experiments combined with quantum simulations reveal that the anharmonic quantum fluctuations of hydrogen nuclei weaken the weak hydrogen bonds and strengthen the relatively strong ones. However, this trend can be completely reversed when the hydrogen bond is strongly coupled to the polar atomic sites of the surface.

Inelastic electron tunneling spectroscopy of a single nuclear spin.

Science.gov (United States)

Delgado, F; Fernández-Rossier, J

2011-08-12

Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

Tunneling technologies for the collider ring tunnels

International Nuclear Information System (INIS)

Frobenius, P.

1989-01-01

The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs

The Ehrlich–Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

International Nuclear Information System (INIS)

Gianfrancesco, Anthony G; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V; Vasudevan, Rama K

2015-01-01

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich–Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La_5_/_8Ca_3_/_8MnO_3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides. (paper)

The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach.

Science.gov (United States)

Gianfrancesco, Anthony G; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V; Vasudevan, Rama K

2015-11-13

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

Science.gov (United States)

Gianfrancesco, Anthony G.; Tselev, Alexander; Baddorf, Arthur P.; Kalinin, Sergei V.; Vasudevan, Rama K.

2015-11-01

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ˜0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

STM in liquids. A scanning tunneling microscopy exploration of the liquid-solid interface.

NARCIS (Netherlands)

Hulsken, B.

2008-01-01

This thesis reports of a series of atomic scale studies of the liquid-solid interface, carried out with a home-built liquid-cell Scanning Tunnelling Microscope (STM). The home-built liquid-cell STM is described in detail, and numerical simulations are performed to show that surfaces immersed in the

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

Science.gov (United States)

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Local X-ray magnetic circular dichroism study of Fe/Cu(111) using a tunneling smart tip

Energy Technology Data Exchange (ETDEWEB)

DiLullo, Andrew; Shirato, Nozomi; Cummings, Marvin [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Kersell, Heath; Chang, Hao [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Ohio University, Athens, OH 45701 (United States); Rosenmann, Daniel; Miller, Dean; Freeland, John W. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Hla, Saw-Wai [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Ohio University, Athens, OH 45701 (United States); Rose, Volker, E-mail: vrose@anl.gov [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

2016-01-28

A tunneling smart tip of a synchrotron X-ray scanning tunneling microscope provides simultaneously localized topographic, elemental and magnetic information. Localized spectroscopy with simultaneous topographic, elemental and magnetic information is presented. A synchrotron X-ray scanning tunneling microscope has been employed for the local study of the X-ray magnetic circular dichroism at the Fe L{sub 2,3}-edges of a thin iron film grown on Cu(111). Polarization-dependent X-ray absorption spectra have been obtained through a tunneling smart tip that serves as a photoelectron detector. In contrast to conventional spin-polarized scanning tunneling microscopy, X-ray excitations provide magnetic contrast even with a non-magnetic tip. Intensity variations in the photoexcited tip current point to chemical variations within a single magnetic Fe domain.

Iron on GaN(0001) pseudo-1 × 1 (1+1/(12) ) investigated by scanning tunneling microscopy and first-principles theory

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Mandru, Andrada-Oana; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Takeuchi, Noboru [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Al-Brithen, Hamad A. H. [Physics and Astronomy Department, King Abdulah Institute for Nanotechnology, King Saud University, Riyadh, Saudi Arabia, and National Center for Nano Technology, KACST, Riyadh (Saudi Arabia)

2014-04-28

We have investigated sub-monolayer iron deposition on atomically smooth GaN(0001) pseudo-1 × 1 (1+1/(12) ). The iron is deposited at a substrate temperature of 360 °C, upon which reflection high energy electron diffraction shows a transformation to a √(3)×√(3)-R30° pattern. After cooling to room temperature, the pattern transforms to a 6 × 6, and scanning tunneling microscopy reveals 6 × 6 reconstructed regions decorating the GaN step edges. First-principles theoretical calculations have been carried out for a range of possible structural models, one of the best being a Ga dimer model consisting of 2/9 monolayer of Fe incorporated into 7/3 monolayer of Ga in a relaxed but distorted structure.

Computational Prediction of Excited-State Carbon Tunneling in the Two Steps of Triplet Zimmerman Di-π-Methane Rearrangement.

Science.gov (United States)

Li, Xin; Liao, Tao; Chung, Lung Wa

2017-11-22

The photoinduced Zimmerman di-π-methane (DPM) rearrangement of polycyclic molecules to form synthetically useful cyclopropane derivatives was found experimentally to proceed in a triplet excited state. We have applied state-of-the-art quantum mechanical methods, including M06-2X, DLPNO-CCSD(T) and variational transition-state theory with multidimensional tunneling corrections, to an investigation of the reaction rates of the two steps in the triplet DPM rearrangement of dibenzobarrelene, benzobarrelene and barrelene. This study predicts a high probability of carbon tunneling in regions around the two consecutive transition states at 200-300 K, and an enhancement in the rates by 104-276/35-67% with carbon tunneling at 200/300 K. The Arrhenius plots of the rate constants were found to be curved at low temperatures. Moreover, the computed 12 C/ 13 C kinetic isotope effects were affected significantly by carbon tunneling and temperature. Our predictions of electronically excited-state carbon tunneling and two consecutive carbon tunneling are unprecedented. Heavy-atom tunneling in some photoinduced reactions with reactive intermediates and narrow barriers can be potentially observed at relatively low temperature in experiments.

Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

International Nuclear Information System (INIS)

Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

2010-01-01

This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

Single-molecule conductance of redox molecules in electrochemical scanning tunneling microscopy

DEFF Research Database (Denmark)

Haiss, W.; Albrecht, Tim; van Zalinge, H.

2007-01-01

of a maximum in the I-tunneling versus electrode potential relationship can be fitted by a "soft" gating concept. This arises from large configurational fluctuations of the molecular bridge linked to the gold contacts by flexible chains. This view is incorporated in a formalism that is well-suited for data...... analysis and reproduces in all important respects the 6V6 data for physically sound values of the appropriate parameters. This study demonstrates that fluctuations of isolated configurationally "soft" molecules can dominate charge transport patterns and that theoretical frameworks for compact monolayers...

Tip preparation for usage in an ultra-low temperature UHV scanning tunneling microscope

Directory of Open Access Journals (Sweden)

S. Ernst, S. Wirth, M. Rams, V. Dolocan and F. Steglich

2007-01-01

Full Text Available This work deals with the preparation and characterization of tungsten tips for the use in UHV low-temperature scanning tunneling microscopy and spectroscopy (STM and STS, respectively. These specific environments require in situ facilities for tip conditioning, for further sharpening of the tips, as well as for reliable tip characterization. The implemented conditioning methods include direct resistive annealing, annealing by electron bombardment, and self-sputtering with noble gas ions. Moreover, results from in situ tip characterization by field emission and STM experiments were compared to ex situ scanning electron microscopy. Using the so-prepared tips, high resolution STM images and tunneling spectra were obtained in a temperature range from ambient down to 350 mK, partially with applied magnetic field, on a variety of materials.

Study of Perylenetetracarboxylic Acid Dimethylimide Films by Cyclic Thermal Desorption and Scanning Probe Microscopy

Science.gov (United States)

Pochtennyi, A. E.; Lappo, A. N.; Il'yushonok, I. P.

2018-02-01

Some results of studying the direct-current (DC) conductivity of perylenetetracarboxylic acid dimethylimide films by cyclic oxygen thermal desorption are presented. The microscopic parameters of hopping electron transport over localized impurity and intrinsic states were determined. The bandgap width and the sign of major current carriers were determined by scanning probe microscopy methods (atomic force microscopy, scanning probe spectroscopy, and photoassisted Kelvin probe force microscopy). The possibility of the application of photoassisted scanning tunneling microscopy for the nanoscale phase analysis of photoconductive films is discussed.

Proceedings of 11. Conference on Electron Microscopy of Solids

International Nuclear Information System (INIS)

2002-01-01

The conference is the cyclically organised discussion forum on problems connected with application of different electron microscopy techniques for the study of solid state materials. The main topics of 11 conference on Electron Microscopy of Solids held in Krynica (PL) in 2002 was: application of TEM in materials science; analytical techniques and orientation imaging in materials science; high resolution TEM in electronic materials; TEM and SEM application in ceramic and composites; advanced TEM techniques; advanced analytical and orientation imaging techniques; application of TEM in investigations of amorphous and nanocrystalline material; Intermetallic and superalloys; TEM application in martensite alloys; TEM and SEM application in research of iron base alloys; TEM studies of deformed alloys; TEM application in thin films and surface layer studies; TEM and SEM application in materials science

Electron flux during pericyclic reactions in the tunneling limit: Quantum simulation for cyclooctatetraene

International Nuclear Information System (INIS)

Hege, Hans-Christian; Manz, Joern; Marquardt, Falko; Paulus, Beate; Schild, Axel

2010-01-01

Graphical abstract: In the limit of coherent tunneling, double bond shifting (DBS) of cyclooctatetraene from a reactant (R) to a product (P) is associated with pericyclic electron fluxes from double to single bonds, corresponding to a pincer-motion-type set of arrows in the Lewis structures, each representing a transfer of 0.19 electrons. - Abstract: Pericyclic rearrangement of cyclooctatetraene proceeds from equivalent sets of two reactants to two products. In the ideal limit of coherent tunneling, these reactants and products may tunnel to each other by ring inversions and by double bond shifting (DBS). We derive simple cosinusoidal or sinusoidal time evolutions of the bond-to-bond electron fluxes and yields during DBS, for the tunneling scenario. These overall yields and fluxes may be decomposed into various contributions for electrons in so called pericyclic, other valence, and core orbitals. Pericyclic orbitals are defined as the subset of valence orbitals which describe the changes of Lewis structures during the pericyclic reaction. The quantum dynamical results are compared with the traditional scheme of fluxes of electrons in pericyclic orbitals, as provided by arrows in Lewis structures.

Recognizing nitrogen dopant atoms in graphene using atomic force microscopy

DEFF Research Database (Denmark)

van der Heijden, Nadine J.; Smith, Daniel; Calogero, Gaetano

2016-01-01

Doping graphene by heteroatoms such as nitrogen presents an attractive route to control the position of the Fermi level in the material. We prepared N-doped graphene on Cu(111) and Ir(111) surfaces via chemical vapor deposition of two different molecules. Using scanning tunneling microscopy image...

Phytophthora ramorum tissue colonization studied with fluorescense microscopy

Science.gov (United States)

M. Riedel; S. Wagner; M. Gotz; L. Belbahri; F. Lefort; S. Werres

2009-01-01

The proceeding worldwide spread and the expanding host spectrum of P. ramorum has become a serious threat to natural plant communities. To encounter this threat detailed knowledge about infection pathways and tissue colonization is essential. To analyze these issues, histological studies of infected tissue with epifluorescence microscopy have been...

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

Science.gov (United States)

Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

2017-11-01

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic force microscope-assisted scanning tunneling spectroscopy under ambient conditions.

Science.gov (United States)

Vakhshouri, Amin; Hashimoto, Katsushi; Hirayama, Yoshiro

2014-12-01

We have developed a method of atomic force microscopy (AFM)-assisted scanning tunneling spectroscopy (STS) under ambient conditions. An AFM function is used for rapid access to a selected position prior to performing STS. The AFM feedback is further used to suppress vertical thermal drift of the tip-sample distance during spectroscopy, enabling flexible and stable spectroscopy measurements at room temperature. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

A functional renormalization group application to the scanning tunneling microscopy experiment

Directory of Open Access Journals (Sweden)

José Juan Ramos Cárdenas

2015-12-01

Full Text Available We present a study of a system composed of a scanning tunneling microscope (STM tip coupled to an absorbed impurity on a host surface using the functional renormalization group (FRG. We include the effect of the STM tip as a correction to the self-energy in addition to the usual contribution of the host surface in the wide band limit. We calculate the differential conductance curves at two different lateral distances from the quantum impurity and find good qualitative agreement with STM experiments where the differential conductance curves evolve from an antiresonance to a Lorentzian shape.

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

Science.gov (United States)

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques.

Science.gov (United States)

Bolker, Asaf; Saguy, Cecile; Kalish, Rafi

2014-09-26

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND's size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques

Science.gov (United States)

Bolker, Asaf; Saguy, Cecile; Kalish, Rafi

2014-09-01

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND’s size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques.

Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques

International Nuclear Information System (INIS)

Bolker, Asaf; Kalish, Rafi; Saguy, Cecile

2014-01-01

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND’s size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques. (paper)

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

International Nuclear Information System (INIS)

Rout, G.C.; Panda, S.K.

2011-01-01

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T c cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T c systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S K [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S.K. [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Effects of polymer corrosion inhibitor on widening etch tunnels of aluminum foil for capacitor

International Nuclear Information System (INIS)

Ban, Chaolei; He, Yedong; Shao, Xin; Wang, Zhishen

2014-01-01

Highlights: •With PSSA, the exterior surface dissolution of etched Al foil is suppressed. •With PSSA, the interior surface dissolution of etched Al foil is facilitated. •With PSSA, the tunnels are widened along the entire length. •With PSSA, the area and capacitance of etched Al foil are significantly improved. -- Abstract: We investigated the effects of polymeric corrosion inhibitor polystyrene sulfonic acid (PSSA) additive to 3% HNO 3 solution on widening tunnels of pre-etched aluminum foil by electrochemical DC etching for aluminum electrolytic capacitors, using scanning electron microscopy and polarization curves. With trace PSSA, the dissolution of exterior surface of etch tunnels of Al foil is suppressed and the dissolution of interior surface of etch tunnels of Al foil is facilitated, respectively. The tunnels transform from circular cone to circular column in shape and pits-merging on the surface is weakened, leading to significant increase in the surface area and specific capacitance of the Al foil. The amounts of reduced thickness and weight of Al foil during the widening process of etch tunnels can be decreased if PSSA is employed

Force and light tuning vertical tunneling current in the atomic layered MoS2.

Science.gov (United States)

Li, Feng; Lu, Zhixing; Lan, Yann-Wen; Jiao, Liying; Xu, Minxuan; Zhu, Xiaoyang; Zhang, Xiankun; Wu, Hualin; Qi, Junjie

2018-07-06

In this work, the vertical electrical transport behavior of bilayer MoS 2 under the coupling of force and light was explored by the use of conductive atomic force microscopy. We found that the current-voltage behavior across the tip-MoS 2 -Pt junction is a tunneling current that can be well fitted by a Simmons approximation. The transport behavior is direct tunneling at low bias and Fowler-Nordheim tunneling at high bias, and the transition voltage and tunnel barrier height are extracted. The effect of force and light on the effective band gap of the junction is investigated. Furthermore, the source-drain current drops surprisingly when we continually increase the force, and the dropping point is altered by the provided light. This mechanism is responsible for the tuning of tunneling barrier height and width by force and light. These results provide a new way to design devices that take advantage of ultrathin two-dimensional materials. Ultrashort channel length electronic components that possess tunneling current are important for establishing high-efficiency electronic and optoelectronic systems.

Tip-Dependent Scanning Tunneling Microscopy Imaging of Ultrathin FeO Films on Pt(111)

DEFF Research Database (Denmark)

Merte, Lindsay Richard; Grabow, Lars C.; Peng, Guowen

2011-01-01

High-resolution scanning tunneling microscope (STM) images of moiré-structured FeO films on Pt(111) were obtained in a number of different tip-dependent imaging modes. For the first time, the STM images are distinguished and interpreted unambiguously with the help of distinct oxygen...

Proceedings of the international society for optical engineering biomedical image processing 2

International Nuclear Information System (INIS)

Bovik, A.G.; Howard, V.

1991-01-01

This book contains the proceedings of biomedical image processing. Topics covered include: Filtering and reconstruction of biomedical images; analysis, classification and recognition of biomedical images; and 3-D microscopy

Size dependence in tunneling spectra of PbSe quantum-dot arrays.

Science.gov (United States)

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

Local crystallography analysis for atomically resolved scanning tunneling microscopy images

International Nuclear Information System (INIS)

Lin, Wenzhi; Li, Qing; Belianinov, Alexei; Gai, Zheng; Baddorf, Arthur P; Pan, Minghu; Jesse, Stephen; Kalinin, Sergei V; Sales, Brian C; Sefat, Athena

2013-01-01

Scanning probe microscopy has emerged as a powerful and flexible tool for atomically resolved imaging of surface structures. However, due to the amount of information extracted, in many cases the interpretation of such data is limited to being qualitative and semi-quantitative in nature. At the same time, much can be learned from local atom parameters, such as distances and angles, that can be analyzed and interpreted as variations of local chemical bonding, or order parameter fields. Here, we demonstrate an iterative algorithm for indexing and determining atomic positions that allows the analysis of inhomogeneous surfaces. This approach is further illustrated by local crystallographic analysis of several real surfaces, including highly ordered pyrolytic graphite and an Fe-based superconductor FeTe 0.55 Se 0.45 . This study provides a new pathway to extract and quantify local properties for scanning probe microscopy images. (paper)

Resolving amorphous solid-liquid interfaces by atomic force microscopy

International Nuclear Information System (INIS)

Burson, Kristen M.; Gura, Leonard; Kell, Burkhard; Büchner, Christin; Lewandowski, Adrian L.; Heyde, Markus; Freund, Hans-Joachim

2016-01-01

Recent advancements in liquid atomic force microscopy make it an ideal technique for probing the structure of solid-liquid interfaces. Here, we present a structural study of a two-dimensional amorphous silica bilayer immersed in an aqueous solution utilizing liquid atomic force microscopy with sub-nanometer resolution. Structures show good agreement with atomically resolved ultra-high vacuum scanning tunneling microscopy images obtained on the same sample system, owing to the structural stability of the silica bilayer and the imaging clarity from the two-dimensional sample system. Pair distance histograms of ring center positions are utilized to develop quantitative metrics for structural comparison, and the physical origin of pair distance histogram peaks is addressed by direct assessment of real space structures.

Submolecular Electronic Mapping of Single Cysteine Molecules by in Situ Scanning Tunneling Imaging

DEFF Research Database (Denmark)

Zhang, Jingdong; Chi, Qijin; Nazmutdinov, R. R.

2009-01-01

We have used L-Cysteine (Cys) as a model system to study the surface electronic structures of single molecules at the submolecular level in aqueous buffer solution by a combination of electrochemical scanning tunneling microscopy (in situ STM), electrochemistry including voltammetry and chronocou...

Simulation of the soft-landing and adsorption of C{sub 60} molecules on a graphite substrate and computation of their scanning-tunnelling-microscopy-like images

Energy Technology Data Exchange (ETDEWEB)

Rafii-Tabar, H. [Computational Nano-Science Research Group, Centre for Numerical Modelling and Process Analysis, School of Computing and Mathematical Sciences, University of Greenwich, Greenwich, London (United Kingdom); Jurczyszyn, L.; Stankiewicz, B. [Institute of Experimental Physics, University of Wroclaw, Wroclaw (Poland)

2000-07-03

A constant-temperature molecular dynamics (MD) simulation was performed to model the soft-landing and adsorption of C{sub 60} molecules on a graphite substrate with the C{sub 60}s treated as soft molecules and released individually towards the substrate. The intra-molecular and intra-planar covalently bonding interactions were modelled by very accurate many-body potentials, and the non-bonding forces were derived from various pairwise potentials. The simulation extended over 1.6 million time steps covering a significant period of 160 picoseconds. The final alignment of the molecules on the surface agrees closely with that observed in an experiment based on scanning tunnelling microscopy (STM) on the same system, performed at room temperature and under ultrahigh-vacuum (UHV) conditions. Using a tungsten tip in a constant-current mode of imaging, we have also computed the STM-like images of one of the adsorbed molecules using a formulation of the STM tunnelling current based on Keldysh's non-equilibrium Green function formalism. Our aim has been to search for tip-induced states, which were speculated, on the basis of another STM-based experiment, performed in air, to form one of the possible origins of the extra features purported to have been observed in that experiment. We have not obtained any such states. (author)

Mirror Buckling Transitions in Freestanding Graphene Membranes Induced through Scanning Tunneling Microscopy

Science.gov (United States)

Schoelz, James K.

Graphene has the ability to provide for a technological revolution. First isolated and characterized in 2004, this material shows promise in the field of flexible electronics. The electronic properties of graphene can be tuned by controlling the shape of the membrane. Of particular interest in this endeavor are the thermal ripples in graphene membranes. Years of theoretical work by such luminaries as Lev Landau, Rudolf Peierls, David Mermin and Herbert Wagner have established that 2D crystals should not be thermodynamically stable. Experimental research on thin films has supported this finding. Yet graphene exists, and freestanding graphene films have been grown on large scales. It turns out that coupling between the bending and stretching phonons can stabilize the graphene in a flat, albeit rippled phase. These ripples have attracted much attention, and recent work has shown how to arrange these ripples in a variety of configurations. In this thesis, I will present work done using a scanning tunneling microscope (STM) to interact with freestanding graphene membranes. First I will present STM images of freestanding graphene and show how these images show signs of distortion under the electrostatic influence of the STM tip. This electrostatic attraction between the STM tip and the graphene sample can be used to pull on the graphene sample. At the same time, by employing Joule heating in order to heat graphene using the tunneling current, and exploiting the negative coefficient of thermal expansion, a repulsive thermal load can be generated. By repeatedly pulling on the graphene using the electrostatic potential, while sequentially increasing the setpoint current we can generate a thermal mirror buckling event. Slowly heating the graphene using the tunneling current, prepares a small convex region of graphene under the tip. By increasing thermal stress, as well as pulling using the out of plane electrostatic force, the graphene suddenly and irreversibly switches the

SPATIAL REPARTITION OF CURRENT FLUCTUATIONS IN A SCANNING TUNNELING MICROSCOPE

Directory of Open Access Journals (Sweden)

Jerome Lagoute

2011-05-01

Full Text Available Scanning Tunneling Microscopy (STM is a technique where the surface topography of a conducting sample is probed by a scanning metallic tip. The tip-to-surface distance is controlled by monitoring the electronic tunneling current between the two metals. The aim of this work is to extend the temporal range of this instrument by characterising the time fluctuations of this current on different surfaces. The current noise power spectral density is dominated by a characteristic 1/f component, the physical origin of which is not yet clearly identified, despite a number of investigations. A new I-V preamplifier was developed in order to characterise these fluctuations of the tunnelling current and to obtain images of their spatial repartition. It is observed that their intensity is correlated with some topographical features. This information can be used to get insights on the physical phenomena involved that are not accessible by the usual STM set-up, which is limited to low frequencies.

Scanning probe microscope simulator for the assessment of noise in scanning probe microscopy controllers

International Nuclear Information System (INIS)

Wutscher, T.; Niebauer, J.; Giessibl, F. J.

2013-01-01

We present an electronic circuit that allows to calibrate and troubleshoot scanning probe microscopy (SPM) controllers with respect to their noise performance. The control signal in an SPM is typically highly nonlinear—the tunneling current in scanning tunneling microscopy (STM) varies exponentially with distance. The exponential current-versus-voltage characteristics of diodes allow to model the current dependence in STM. Additional inputs allow to simulate the effects of external perturbations and the reactions of the control electronics. We characterized the noise performance of the feedback controller using the apparent topography roughness of recorded images. For a comparison of different STM controllers, an optimal gain parameter was determined by exploring settling times through a rectangular perturbation signal. We used the circuit to directly compare the performance of two types of SPM controllers used in our laboratory

Cotunneling enhancement of magnetoresistance in double magnetic tunnel junctions with embedded superparamagnetic NiFe nanoparticles

International Nuclear Information System (INIS)

Dempsey, K.J.; Arena, D.; Hindmarch, A.T.; Wei, H.X.; Qin, Q.H.; Wen, Z.C.; Wang, W.X.; Vallejo-Fernandez, G.; Han, X.F.; Marrows, C.H.

2010-01-01

Temperature and bias voltage-dependent transport characteristics are presented for double magnetic tunnel junctions (DMTJs) with self-assembled NiFe nanoparticles embedded between insulating alumina barriers. The junctions with embedded nanoparticles are compared to junctions with a single barrier of comparable size and growth conditions. The embedded particles are characterized using x-ray absorption spectroscopy, transmission electron microscopy, and magnetometry techniques, showing that they are unoxidized and remain superparamagnetic to liquid helium temperatures. The tunneling magnetoresistance (TMR) for the DMTJs is lower than the control samples, however, for the DMTJs an enhancement in TMR is seen in the Coulomb blockade region. Fitting the transport data in this region supports the theory that cotunneling is the dominant electron transport process within the Coulomb blockade region, sequential tunneling being suppressed. We therefore see an enhanced TMR attributed to the change in the tunneling process due to the interplay of the Coulomb blockade and spin-dependent tunneling through superparamagnetic nanoparticles, and develop a simple model to quantify the effect, based on the fact that our nanoparticles will appear blocked when measured on femtosecond tunneling time scales.

Solvent-Dependent Self-Assembly of 4,7-Dibromo-5,6-bis(octyloxybenzo[c][1,2,5] Thiadiazole on Graphite Surface by Scanning Tunneling Microscopy

Directory of Open Access Journals (Sweden)

Bao Zha

2013-01-01

Full Text Available Solvent effect on self-assembly of 4,7-dibromo-5,6-bis(octyloxybenzo[c][1,2,5] thiadiazole (DBT on a highly oriented graphite (HOPG surface was investigated by scanning tunneling microscopy (STM by using 1-phenyloctane, 1-octanoic acid, and 1-octanol as the solvents. Two different patterns were obtained in 1-phenyloctane and 1-octanoic acid, suggesting that the self-assembly of DBT was solvent dependent. At the 1-phenyloctane/HOPG interface, a linear structure was revealed due to the intermolecular halogen bonding. When 1-octanoic acid and 1-octanol are used as the solvents, the coadsorption of solvent molecules resulting from the hydrogen bonding between DBT and solvent made an important contribution to the formation of a lamellar structure. The results demonstrate that solvents could affect the molecular self-assembly according to the variational intermolecular interactions.

Si Nanoribbons on Ag(110) Studied by Grazing-Incidence X-Ray Diffraction, Scanning Tunneling Microscopy, and Density-Functional Theory: Evidence of a Pentamer Chain Structure.

Science.gov (United States)

Prévot, Geoffroy; Hogan, Conor; Leoni, Thomas; Bernard, Romain; Moyen, Eric; Masson, Laurence

2016-12-30

We report a combined grazing incidence x-ray diffraction (GIXD), scanning tunneling microscopy (STM), and density-functional theory (DFT) study which clearly elucidates the atomic structure of the Si nanoribbons grown on the missing-row reconstructed Ag(110) surface. Our study allows us to discriminate between the theoretical models published in the literature, including the most stable atomic configurations and those based on a missing-row reconstructed Ag(110) surface. GIXD measurements unambiguously validate the pentamer model grown on the reconstructed surface, obtained from DFT. This pentamer atomistic model accurately matches the high-resolution STM images of the Si nanoribbons adsorbed on Ag(110). Our study closes the long-debated atomic structure of the Si nanoribbons grown on Ag(110) and definitively excludes a honeycomb structure similar to that of freestanding silicene.

Observation and Manipulation of Polymers by Scanning Tunneling and Atomic Force Microscopy

Science.gov (United States)

1988-07-13

Observation and Manipulation of Polymers by Scanning Tunneling and Atomic Force Microscooy 12. PERSONAL AUTHOR(S) M.M. Dovek, T.R. Albrecht, S.W.J. Kuan, C.A...COUNT FIELD GOP SU8 -GROUP 19. ABSTRACT (Continue on reverse if ncosay and kIti1I by block numbor) ~AM\\~ v~~\\~A Dhe properties of monolayer films of...organic materi s are importantl i--V~ ety of technologies. We have employed the STM and AFM t study’ LanD~ ..-odgett films of a varie ’ty of polymers

Scanning tunneling spectroscopy study of DNA conductivity

Czech Academy of Sciences Publication Activity Database

Kratochvílová, Irena; Král, Karel; Bunček, M.; Nešpůrek, Stanislav; Todorciuc, Tatiana; Weiter, M.; Navrátil, J.; Schneider, Bohdan; Pavluch, J.

2008-01-01

Roč. 6, č. 3 (2008), s. 422-426 ISSN 1895-1082 R&D Projects: GA AV ČR KAN401770651; GA MŠk OC 137; GA AV ČR KAN400720701; GA AV ČR KAN200100801 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505; CEZ:AV0Z40550506 Keywords : molecular electronics * DNA * scanning tunneling microscopy * conductivity * charge carrier transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.448, year: 2008

Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

Science.gov (United States)

Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

2011-10-28

The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

Atomic force microscopy. A new method for atom identification and manipulation

International Nuclear Information System (INIS)

Abe, Masayuki; Sugimoto, Yoshiaki; Morita, Seizo

2007-01-01

Frequency modulation atomic force microscopy (FM-AFM) is a scanning probe technique that detects the interaction forces between the outermost atom of a sharp tip and the atoms at a surface to image the sample surface. It is expected that the FM-AFM can cover the research field which scanning tunneling microscopy does not provide. In this article, we would introduce FM-AFM experiments applied to site-specific force measurements and atom manipulation, including how to solve the problems to achieve precise FM-AFM measurements. (author)

Tunnel - history of

International Nuclear Information System (INIS)

1998-11-01

This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.

Typical Underwater Tunnels in the Mainland of China and Related Tunneling Technologies

Directory of Open Access Journals (Sweden)

Kairong Hong

2017-12-01

Full Text Available In the past decades, many underwater tunnels have been constructed in the mainland of China, and great progress has been made in related tunneling technologies. This paper presents the history and state of the art of underwater tunnels in the mainland of China in terms of shield-bored tunnels, drill-and-blast tunnels, and immersed tunnels. Typical underwater tunnels of these types in the mainland of China are described, along with innovative technologies regarding comprehensive geological prediction, grouting-based consolidation, the design and construction of large cross-sectional tunnels with shallow cover in weak strata, cutting tool replacement under limited drainage and reduced pressure conditions, the detection and treatment of boulders, the construction of underwater tunnels in areas with high seismic intensity, and the treatment of serious sedimentation in a foundation channel of immersed tunnels. Some suggestions are made regarding the three potential great strait-crossing tunnels—the Qiongzhou Strait-Crossing Tunnel, Bohai Strait-Crossing Tunnel, and Taiwan Strait-Crossing Tunnel—and issues related to these great strait-crossing tunnels that need further study are proposed. Keywords: Underwater tunnel, Strait-crossing tunnel, Shield-bored tunnel, Immersed tunnel, Drill and blast

Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

International Nuclear Information System (INIS)

Rastei, M V; Bucher, J P

2006-01-01

A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

2nd International Multidisciplinary Microscopy and Microanalysis Congress

CERN Document Server

Oral, Ahmet; Ozer, Mehmet

2015-01-01

The 2nd International Multidisciplinary Microscopy and Microanalysis Congress & Exhibition (InterM 2014) was held on 16–19 October 2014 in Oludeniz, Fethiye/ Mugla, Turkey. The aim of the congress was to gather scientists from various branches and discuss the latest improvements in the field of microscopy. The focus of the congress has been widened in an "interdisciplinary" manner, so as to allow all scientists working on several related subjects to participate and present their work. These proceedings include 33 peer-reviewed technical papers, submitted by leading academic and research institutions from over 17 countries and representing some of the most cutting-edge research available. The papers were presented at the congress in the following sessions: ·         Applications of Microscopy in the Physical Sciences ·         Applications of Microscopy in the Biological Sciences.

First Principles Study of Electron Tunneling through Ice

KAUST Repository

Cucinotta, Clotilde S.; Rungger, Ivan; Sanvito, Stefano

2012-01-01

With the aim of understanding electrochemical scanning tunnel microscopy experiments in an aqueous environment, we investigate electron transport through ice in the coherent limit. This is done by using the nonequilibrium Greens functions method, implemented within density functional theory, in the self-interaction corrected local density approximation. In particular, we explore different ice structures and different Au electrode surface orientations. By comparing the decay coefficient for different thicknesses to the ice complex band structure, we find that the electron transport occurs via tunneling with almost one-dimensional character. The slow decay of the current with the ice thickness is largely due to the small effective mass of the conduction electrons. Furthermore, we find that the calculated tunneling decay coefficients at the Fermi energy are not sensitive to the structural details of the junctions and are at the upper end of the experimental range for liquid water. This suggests that linear response transport measurements are not capable of distinguishing between different ordered ice structures. However, we also demonstrate that a finite bias measurement may be capable of sorting polar from nonpolar interfaces due to the asymmetry of the current-voltage curves for polar interfaces. © 2012 American Chemical Society.

First Principles Study of Electron Tunneling through Ice

KAUST Repository

Cucinotta, Clotilde S.

2012-10-25

With the aim of understanding electrochemical scanning tunnel microscopy experiments in an aqueous environment, we investigate electron transport through ice in the coherent limit. This is done by using the nonequilibrium Greens functions method, implemented within density functional theory, in the self-interaction corrected local density approximation. In particular, we explore different ice structures and different Au electrode surface orientations. By comparing the decay coefficient for different thicknesses to the ice complex band structure, we find that the electron transport occurs via tunneling with almost one-dimensional character. The slow decay of the current with the ice thickness is largely due to the small effective mass of the conduction electrons. Furthermore, we find that the calculated tunneling decay coefficients at the Fermi energy are not sensitive to the structural details of the junctions and are at the upper end of the experimental range for liquid water. This suggests that linear response transport measurements are not capable of distinguishing between different ordered ice structures. However, we also demonstrate that a finite bias measurement may be capable of sorting polar from nonpolar interfaces due to the asymmetry of the current-voltage curves for polar interfaces. © 2012 American Chemical Society.

Ionic channels in Langmuir-Blodgett films imaged by a scanning tunneling microscope.

Science.gov (United States)

Kolomytkin, O V; Golubok, A O; Davydov, D N; Timofeev, V A; Vinogradova, S A; Tipisev SYa

1991-01-01

The molecular structure of channels formed by gramicidin A in a lipid membrane was imaged by a scanning tunneling microscope operating in air. The mono- and bimolecular films of lipid with gramicidin A were deposited onto a highly oriented pyrolitic graphite substrate by the Langmuir-Blodgett technique. It has been shown that under high concentration gramicidin A molecules can form in lipid films a quasi-regular, densely packed structure. Single gramicidin A molecules were imaged for the first time as well. The cavity of 0.4 +/- 0.05 nm in halfwidth was found on the scanning tunneling microscopy image of the gramicidin A molecule. The results of direct observation obtained by means of scanning tunneling microscope are in good agreement with the known molecular model of gramicidin A. It was shown that gramicidin A molecules can exist in a lipid monolayer as individual molecules or combined into clusters. The results demonstrate that scanning tunneling microscope can be used for high spatial resolution study of ionic channel structure. Images FIGURE 1 FIGURE 2 FIGURE 4 FIGURE 5 PMID:1712239

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Josephson scanning tunneling microscopy -- a local and direct probe of the superconducting order parameter

Energy Technology Data Exchange (ETDEWEB)

Kimura, Hikari; Dynes, Robert; Barber Jr., Richard. P.; Ono, S.; Ando, Y.

2009-09-01

Direct measurements of the superconducting superfluid on the surface of vacuum-cleaved Bi2Sr2CaCu2O8+delta (BSCCO) samples are reported. These measurements are accomplished via Josephson tunneling into the sample using a novel scanning tunneling microscope (STM) equipped with a superconducting tip. The spatial resolution of the STM of lateral distances less than the superconducting coherence length allows it to reveal local inhomogeneities in the pair wavefunction of the BSCCO. Instrument performance is demonstrated first with Josephson measurements of Pb films followed by the layered superconductor NbSe2. The relevant measurement parameter, the Josephson ICRN product, is discussed within the context of both BCS superconductors and the high transition temperature superconductors. The local relationship between the ICRN product and the quasiparticle density of states (DOS) gap are presented within the context of phase diagrams for BSCCO. Excessive current densities can be produced with these measurements and have been found to alter the local DOS in the BSCCO. Systematic studies of this effect were performed to determine the practical measurement limits for these experiments. Alternative methods for preparation of the BSCCO surface are also discussed.

Characterization and Properties of Oligothiophenes Using Scanning Tunneling Microscopy for Possible Use in Organic Electronics

International Nuclear Information System (INIS)

Bishara, E.M.El.

2009-01-01

A scanning tunneling microscopy study has been made on a group of alkyl-substituted oligothiophenes. The self-assembled monolayers of this type of semi-conducting oligomers on graphite were observed and characterized. To control the self-assembly, it is important to first understand the forces that drive the spontaneous ordering of molecules at interfaces. For the identification of the forces, several substituted oligothiophenes were examined: carboxylic acid groups, methyl ester carboxylic acid, and iodine atoms at one end and benzyl esters at the other end of the oligomers this is in addition to the non-functionalized oligothiophehens, Self-assembled monolayers of these molecules were then examined by STM. A detailed analysis of the driving forces and parameters controlling the formation of the self-assembled 2- D crystal monolayers was carried out by performing modeling of the experimental observations. The theoretical calculations gave us a conclusive insight into the intermolecular interactions, which lead to the observed conformation of molecules on the surface. An attempt to react two iodinated oligomers on the surface after the formation of the monolayer has been done; a topochemical reaction studies using UV/Vis light irradiation has been preceded. The targeted reaction was achieved. This can be considered as a great step towards the formation of nano-wires and other organic electronic devices. The applicability of the above method of force-driven self organisation in different patterns was examined as template for building donor-nano structures for electronic devices. It was necessary to examine the stability of the formed templates in air. The monolayers were left to dry and STM images were taken; C60 was then added to the monolayer, and the complexation of the C60 (as acceptor) with the formed monolayer template was examined.

Monitoring pilot projects on bored tunnelling : The Second Heinenoord Tunnel and the Botlek Rail Tunnel

NARCIS (Netherlands)

Bakker, K.J.; De Boer, F.; Admiraal, J.B.M.; Van Jaarsveld, E.P.

1999-01-01

Two pilot projects for bored tunnelling in soft soil have been undertaken in the Netherlands. The monitoring was commissioned under the authority of the Centre for Underground Construction (COB). A description of the research related to the Second Heinenoord Tunnel and the Botlek Rail Tunnel will be

Scanning tunnelling spectroscopy of low pentacene coverage on the Ag/Si(111)-(√3 x √3) surface

International Nuclear Information System (INIS)

Guaino, Ph; Cafolla, A A; McDonald, O; Carty, D; Sheerin, G; Hughes, G

2003-01-01

The low coverage S1 phase of pentacene deposited on Ag/Si(111)-(√3 x √3) has been investigated at room temperature by scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS). Current-voltage data were acquired simultaneously with STM images for this phase. The normalized conductivity reveals two pronounced peaks at -1.10 and +2.25 V relative to the Fermi level. These peaks are attributed to resonant tunnelling through the highest occupied molecular orbital and lowest unoccupied molecular orbital molecular levels of the pentacene layer. The electronic properties of this interface are discussed in relation to results obtained for pentacene adsorbed on other metallic surfaces

Reversal of atomic contrast in scanning probe microscopy on (111) metal surfaces

Czech Academy of Sciences Publication Activity Database

Ondráček, Martin; González, C.; Jelínek, Pavel

2012-01-01

Roč. 24, 08 (2012), 084003/1-084003/7 ISSN 0953-8984 R&D Projects: GA ČR(CZ) GPP204/11/P578; GA ČR GAP204/10/0952; GA ČR GA202/09/0545; GA MŠk(CZ) ME10076 Grant - others:AVČR(CZ) M100100904 Institutional research plan: CEZ:AV0Z10100521 Keywords : atomic force microscopy * metallic surfaces * atomic contrast * scanning tunneling microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.355, year: 2012 http://iopscience.iop.org/0953-8984/24/8/084003

Electric double layer effect on observable characteristics of the tunnel current through a bridged electrochemical contact

DEFF Research Database (Denmark)

Kuznetsov, A.M.; Medvedev, I.G.; Ulstrup, Jens

2007-01-01

Scanning tunneling microscopy and electrical conductivity of redox molecules in conducting media (aqueous or other media) acquire increasing importance both as novel single-molecule science and with a view on molecular scale functional elements. Such configurations require full and independent el...

How does tunneling contribute to counterintuitive H-abstraction reactivity of nonheme Fe(IV)O oxidants with alkanes?

Science.gov (United States)

Mandal, Debasish; Ramanan, Rajeev; Usharani, Dandamudi; Janardanan, Deepa; Wang, Binju; Shaik, Sason

2015-01-21

This article addresses the intriguing hydrogen-abstraction (H-abstraction) and oxygen-transfer (O-transfer) reactivity of a series of nonheme [Fe(IV)(O)(TMC)(Lax)](z+) complexes, with a tetramethyl cyclam ligand and a variable axial ligand (Lax), toward three substrates: 1,4-cyclohexadiene, 9,10-dihydroanthracene, and triphenyl phosphine. Experimentally, O-transfer-reactivity follows the relative electrophilicity of the complexes, whereas the corresponding H-abstraction-reactivity generally increases as the axial ligand becomes a better electron donor, hence exhibiting an antielectrophilic trend. Our theoretical results show that the antielectrophilic trend in H-abstraction is affected by tunneling contributions. Room-temperature tunneling increases with increase of the electron donation power of the axial-ligand, and this reverses the natural electrophilic trend, as revealed through calculations without tunneling, and leads to the observed antielectrophilic trend. By contrast, O-transfer-reactivity, not being subject to tunneling, retains an electrophilic-dependent reactivity trend, as revealed experimentally and computationally. Tunneling-corrected kinetic-isotope effect (KIE) calculations matched the experimental KIE values only if all of the H-abstraction reactions proceeded on the quintet state (S = 2) surface. As such, the present results corroborate the initially predicted two-state reactivity (TSR) scenario for these reactions. The increase of tunneling with the electron-releasing power of the axial ligand, and the reversal of the "natural" reactivity pattern, support the "tunneling control" hypothesis (Schreiner et al., ref 19). Should these predictions be corroborated, the entire field of C-H bond activation in bioinorganic chemistry would lay open to reinvestigation.

Theory of tunneling in metal--superconductor devices: Supercurrents in the superconductor gap at zero temperature

International Nuclear Information System (INIS)

Garcia, N.; Flores, F.; Guinea, F.

1988-01-01

Tunneling experiments in metal-oxide superconductor have shown the existence of ''leakage'' currents for applied voltages V smaller than one-half of the superconductor gap Δ. These currents are independent of temperature T. Recently experiments with scanning tunneling microscopy (STM) and squeezable tunnel junctions have shown that the observation of the superconductor gap depends strongly on the resistance in the junction. In fact only for resistances larger than ∼10 6 Ω the gap is clearly observable. These experiments have been explained in terms of the perturbative Hamiltonian formalism of Bardeen. However, it may happen that this theory while applicable for very large resistances may not be so for small tunnel resistances. We present here a nonperturbative theory in all orders of the transmitivity chemical bondTochemical bond 2 and show the existence of supercurrents for values of V 2 . We believe that experiments in STM and other junctions should be interpreted in the frame of this theory

Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

Energy Technology Data Exchange (ETDEWEB)

Loth, S.

2007-10-26

This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

Luminescence of Quantum Dots by Coupling with Nonradiative Surface Plasmon Modes in a Scanning Tunneling Microscope

International Nuclear Information System (INIS)

Romero, M.J.; van de Lagemaat, J.

2009-01-01

The electronic coupling between quantum dots (QDs) and surface plasmons (SPs) is investigated by a luminescence spectroscopy based on scanning tunneling microscopy (STM). We show that tunneling luminescence from the dot is excited by coupling with the nonradiative plasmon mode oscillating at the metallic tunneling gap formed during the STM operation. This approach to the SP excitation reveals aspects of the SP-QD coupling not accessible to the more conventional optical excitation of SPs. In the STM, luminescence from the dot is observed when and only when the SP is in resonance with the fundamental transition of the dot. The tunneling luminescence spectrum also suggests that excited SP-QD hybrid states can participate in the excitation of QD luminescence. Not only the SP excitation regulates the QD luminescence but the presence of the dot at the tunneling gap imposes restrictions to the SP that can be excited in the STM, in which the SP cannot exceed the energy of the fundamental transition of the dot. The superior SP-QD coupling observed in the STM is due to the tunneling gap acting as a tunable plasmonic resonator in which the dot is fully immersed.

A compact atomic force-scanning tunneling microscope for studying microelectronics and environmental aerosols

International Nuclear Information System (INIS)

Chen, G.

1996-06-01

This dissertation describes the characteristics and the construction of a compact atomic force/scanning tunneling microscope (AFM/STM). The basics and the method of preparing a tunneling junction between a chemically etched tunneling tip and a micro-manufactured cantilever is outlined by analyzing the forces between tunneling tip and cantilever as well as between force-sensing tip and sample surfaces. To our best knowledge this instrument is the first one using a commercial cantilever with only one piezoelectric tube carrying the whole tunneling sensor. The feedback control system has been optimized after a careful analysis of the electronic loop characteristics. The mode of operation has been determined by analyzing the dynamic characteristics of the scan heads and by investigating the time characteristics of the data acquisition system. The vibration isolation system has been calibrated by analyzing the characteristics of the damping setup and the stiffness of the scan head. The calculated results agree well with the measured ones. Also, a software package for data acquisition and real time display as well as for image processing and three-dimensional visualization has been developed. With this home-made software package, the images can be processed by means of a convolution filter, a Wiener filter and other 2-D FFT filters, and can be displayed in different ways. Atomic resolution images of highly oriented pyrolytic graphite (HOPG) and graphite surfaces have been obtained in AFM and STM mode. New theoretical explanations have been given for the observed anomalous STM and AFM images of graphite by calculating the asymmetric distribution of quantum conductance and tip-surface forces on a graphite surface. This not only resolved the theoretical puzzles of STM and AFM of graphite, but also revealed the relation between atomic force microscopy and scanning tunneling microscopy of graphite. Applications of STM and AFM to micro-electronic devices have been investigated

The nucleation and growth of uranium on the basal plane of graphite studied by scanning tunneling microscopy

International Nuclear Information System (INIS)

Tench, R.J.

1992-11-01

For the first time, nanometer scale uranium clusters were created on the basal plane of highly oriented pyrolytic graphite by laser ablation under ultra-high vacuum conditions. The physical and chemical properties of these clusters were investigated by scanning tunneling microscopy (STM) as well as standard surface science techniques. Auger electron and X-ray photoelectron spectroscopies found the uranium deposit to be free of contamination and showed that no carbide had formed with the underlying graphite. Clusters with sizes ranging from 42 Angstrom 2 to 630 Angstrom 2 were observed upon initial room temperature deposition. Surface diffusion of uranium was observed after annealing the substrate above 800 K, as evidenced by the decreased number density and the increased size of the clusters. Preferential depletion of clusters on terraces near step edges as a result of annealing was observed. The activation energy for diffusion deduced from these measurements was found to be 15 Kcal/mole. Novel formation of ordered uranium thin films was observed for coverages greater than two monolayers after annealing above 900 K. These ordered films displayed islands with hexagonally faceted edges rising in uniform step heights characteristic of the unit cell of the P-phase of uranium. In addition, atomic resolution STM images of these ordered films indicated the formation of the β-phase of uranium. The chemical properties of these surfaces were investigated and it was shown that these uranium films had a reduced oxidation rate in air as compared to bulk metal and that STM imaging in air induced a polarity-dependent enhancement of the oxidation rate

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

Proceedings of the eighteenth annual conference on explosives and blasting technique

International Nuclear Information System (INIS)

Anon.

1993-01-01

This edition of the Proceedings of the Annual Conference on Explosives and Blasting Techniques is the eighteenth in a series published by the International Society of Explosives Engineers. The papers cover a wide variety of explosives and blasting techniques, including: rock mechanics, rock drilling, perimeter control handling and documenting blasting complaints, blast vibration frequencies, blasting techniques for surface and underground coal mines, explosives for permafrost blasting, lightning detection, use of slow motion video to analyze blasts, tunneling, and close-in blasting control. Papers have been processed individually for inclusion on the data base

Fermi surface investigation in the scanning tunneling microscopy of Bi2Sr2CaCu2O8

International Nuclear Information System (INIS)

Voo, K.K.; Wu, W.C.; Chen, H.Y.; Mou, C.Y.

2004-01-01

Within the ideal Fermi liquid picture, the impurity-induced spatial modulation of local density of states (LDOS) in the d-wave superconductor Bi 2 Sr 2 CaCu 2 O 8 is investigated at different superconducting (SC) gap sizes. These LDOS spectra are related to the finite-temperature dI/dV spectra in scanning tunneling microscopy (STM), when the Fermi distribution factor is deconvoluted away from dI/dV. We find stripe-like structures even in the zero gap case due to a local-nesting mechanism. This mechanism is different from the octet-scattering mechanism in the d-wave SC (dSC) state proposed by McElroy et al. [K. McElroy, R.W. Simmonds, J.E. Hoffman, D.H. Lee, J. Orenstein, H. Eisaki, S. Uchida, J.C. Davis, Nature 422 (2003) 592]. The zero gap LDOS is related to the normal state dI/dV. The zero gap spectra when Fourier-transformed into the reciprocal space, can reveal the information of the entire Fermi surface at a single measuring bias voltage, in contrast to the point-wise tracing out proposed by McElroy et al. This may serve as another way to check the reality of Landau quasiparticles in the normal state. We have also re-visited the octet-scattering mechanism in the dSC state and pointed out that, due to the Umklapp symmetry, there are additional peaks in the reciprocal space that experimentally yet to be found

Circularly polarized light emission in scanning tunneling microscopy of magnetic systems

International Nuclear Information System (INIS)

Apell, S.P.; Penn, D.R.; Johansson, P.

2000-01-01

Light is produced when a scanning tunneling microscope is used to probe a metal surface. Recent experiments on cobalt utilizing a tungsten tip found that the light is circularly polarized; the sense of circular polarization depends on the direction of the sample magnetization, and the degree of polarization is of order 10%. This raises the possibility of constructing a magnetic microscope with very good spatial resolution. We present a theory of this effect for iron and cobalt and find a degree of polarization of order 0.1%. This is in disagreement with the experiments on cobalt as well as previous theoretical work which found order of magnitude agreement with the experimental results. However, a recent experiment on iron showed 0.0±2%. We predict that the use of a silver tip would increase the degree of circular polarization for a range of photon energies

Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

Science.gov (United States)

Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

2015-01-27

The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

Investigation of the structural anisotropy in a self-assembling glycinate layer on Cu(100) by scanning tunneling microscopy and density functional theory calculations

Science.gov (United States)

Kuzmin, Mikhail; Lahtonen, Kimmo; Vuori, Leena; Sánchez-de-Armas, Rocío; Hirsimäki, Mika; Valden, Mika

2017-07-01

Self-assembling organic molecule-metal interfaces exhibiting free-electron like (FEL) states offers an attractive bottom-up approach to fabricating materials for molecular electronics. Accomplishing this, however, requires detailed understanding of the fundamental driving mechanisms behind the self-assembly process. For instance, it is still unresolved as to why the adsorption of glycine ([NH2(CH2)COOH]) on isotropic Cu(100) single crystal surface leads, via deprotonation and self-assembly, to a glycinate ([NH2(CH2)COO-]) layer that exhibits anisotropic FEL behavior. Here, we report on bias-dependent scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations for glycine adsorption on Cu(100) single crystal surface. We find that after physical vapor deposition (PVD) of glycine on Cu(100), glycinate self-assembles into an overlayer exhibiting c(2 × 4) and p(2 × 4) symmetries with non-identical adsorption sites. Our findings underscore the intricacy of electrical conductivity in nanomolecular organic overlayers and the critical role the structural anisotropy at molecule-metal interface plays in the fabrication of materials for molecular electronics.

Variability in ACL tunnel placement: observational clinical study of surgeon ACL tunnel variability.

Science.gov (United States)

Wolf, Brian R; Ramme, Austin J; Wright, Rick W; Brophy, Robert H; McCarty, Eric C; Vidal, Armando R; Parker, Richard D; Andrish, Jack T; Amendola, Annunziato

2013-06-01

Multicenter and multisurgeon cohort studies on anterior cruciate ligament (ACL) reconstruction are becoming more common. Minimal information exists on intersurgeon and intrasurgeon variability in ACL tunnel placement. Purpose/ The purpose of this study was to analyze intersurgeon and intrasurgeon variability in ACL tunnel placement in a series of The Multicenter Orthopaedic Outcomes Network (MOON) ACL reconstruction patients and in a clinical cohort of ACL reconstruction patients. The hypothesis was that there would be minimal variability between surgeons in ACL tunnel placement. Cross-sectional study; Level of evidence, 3. Seventy-eight patients who underwent ACL reconstruction by 8 surgeons had postoperative imaging with computed tomography, and ACL tunnel location and angulation were analyzed using 3-dimensional surface processing and measurement. Intersurgeon and intrasurgeon variability in ACL tunnel placement was analyzed. For intersurgeon variability, the range in mean ACL femoral tunnel depth between surgeons was 22%. For femoral tunnel height, there was a 19% range. Tibial tunnel location from anterior to posterior on the plateau had a 16% range in mean results. There was only a small range of 4% for mean tibial tunnel location from the medial to lateral dimension. For intrasurgeon variability, femoral tunnel depth demonstrated the largest ranges, and tibial tunnel location from medial to lateral on the plateau demonstrated the least variability. Overall, surgeons were relatively consistent within their own cases. Using applied measurement criteria, 85% of femoral tunnels and 90% of tibial tunnels fell within applied literature-based guidelines. Ninety-one percent of the axes of the femoral tunnels fell within the boundaries of the femoral footprint. The data demonstrate that surgeons performing ACL reconstructions are relatively consistent between each other. There is, however, variability of average tunnel placement up to 22% of mean condylar depth

Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

Science.gov (United States)

Schouteden, K; Muzychenko, D A; Van Haesendonck, C

2008-07-01

Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

OpenAIRE

Font Capó, Jordi

2012-01-01

A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

International Nuclear Information System (INIS)

Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

2016-01-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2016-08-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Carpal Tunnel Syndrome

Science.gov (United States)

... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

Theory of superconducting tunneling without the tunneling Hamiltonian

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

The Use Of Scanning Probe Microscopy To Investigate Crystal-Fluid Interfaces

International Nuclear Information System (INIS)

Orme, C A; Giocondi, J L

2007-01-01

Over the past decade there has been a natural drive to extend the investigation of dynamic surfaces in fluid environments to higher resolution characterization tools. Various aspects of solution crystal growth have been directly visualized for the first time. These include island nucleation and growth using transmission electron microscopy and scanning tunneling microscopy; elemental step motion using scanning probe microscopy; and the time evolution of interfacial atomic structure using various diffraction techniques. In this lecture we will discuss the use of one such in situ method, scanning probe microscopy, as a means of measuring surface dynamics during crystal growth and dissolution. We will cover both practical aspects of imaging such as environmental control, fluid flow, and electrochemical manipulation, as well as the types of physical measurements that can be made. Measurements such as step motion, critical lengths, nucleation density, and step fluctuations, will be put in context of the information they provide about mechanistic processes at surfaces using examples from metal and mineral crystal growth

Tunneling works. Tunnel koji

Energy Technology Data Exchange (ETDEWEB)

Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

1991-10-25

A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy.

Science.gov (United States)

Timm, Rainer; Eisele, Holger; Lenz, Andrea; Ivanova, Lena; Vossebürger, Vivien; Warming, Till; Bimberg, Dieter; Farrer, Ian; Ritchie, David A; Dähne, Mario

2010-10-13

Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.

Scanning microscopies of superconductors at very low temperatures

International Nuclear Information System (INIS)

Crespo, V.; Maldonado, A.; Galvis, J.A.; Kulkarni, P.; Guillamon, I.; Rodrigo, J.G.; Suderow, H.; Vieira, S.; Banerjee, S.; Rodiere, P.

2012-01-01

We discuss basics of Scanning Tunneling Microscopy and Spectroscopy (STM/S) of the superconducting state with normal and superconducting tips. We present a new method to measure the local variations in the Andreev reflection amplitude between a superconducting tip and the sample. This method is termed Scanning Andreev Reflection Spectroscopy (SAS). We also briefly discuss vortex imaging with STM/S under an applied current through the sample, and show the vortex lattice as a function of the angle between the magnetic field and sample’s surface.

Tunneling junction as an open system. Normal tunneling

International Nuclear Information System (INIS)

Ono, Y.

1978-01-01

The method of the tunneling Hamiltonian is reformulated in the case of normal tunneling by introducing two independent particle baths. Due to the baths, it becomes possible to realize a final stationary state where the electron numbers of the two electrodes in the tunneling system are maintained constant and where there exists a stationary current. The effect of the bath-system couplings on the current-voltage characteristics of the junction is discussed in relation to the usual expression of the current as a function of voltage. (Auth.)

Tunneling time, exit time and exit momentum in strong field tunnel ionization

International Nuclear Information System (INIS)

Teeny, Nicolas

2016-01-01

Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

Tunneling time, exit time and exit momentum in strong field tunnel ionization

Energy Technology Data Exchange (ETDEWEB)

Teeny, Nicolas

2016-10-18

Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

Quantum theory of tunneling

CERN Document Server

Razavy, Mohsen

2014-01-01

In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

Scanning tunneling microscopy of the atomically smooth (001) surface of vanadium pentoxide V_2O_5 crystals

International Nuclear Information System (INIS)

Muslimov, A. E.; Butashin, A. V.; Kanevsky, V. M.

2017-01-01

The (001) cleavage surface of vanadium pentoxide (V_2O_5) crystal has been studied by scanning tunneling spectroscopy (STM). It is shown that the surface is not reconstructed; the STM image allows geometric lattice parameters to be determined with high accuracy. The nanostructure formed on the (001) cleavage surface of crystal consists of atomically smooth steps with a height multiple of unit-cell parameter c = 4.37 Å. The V_2O_5 crystal cleavages can be used as references in calibration of a scanning tunneling microscope under atmospheric conditions both along the (Ñ…, y) surface and normally to the sample surface (along the z axis). It is found that the terrace surface is not perfectly atomically smooth; its roughness is estimated to be ~0.5 Å. This circumstance may introduce an additional error into the microscope calibration along the z coordinate.

Reciprocity theory of apertureless scanning near-field optical microscopy with point-dipole probes.

Science.gov (United States)

Esslinger, Moritz; Vogelgesang, Ralf

2012-09-25

Near-field microscopy offers the opportunity to reveal optical contrast at deep subwavelength scales. In scanning near-field optical microscopy (SNOM), the diffraction limit is overcome by a nanoscopic probe in close proximity to the sample. The interaction of the probe with the sample fields necessarily perturbs the bare sample response, and a critical issue is the interpretation of recorded signals. For a few specific SNOM configurations, individual descriptions have been modeled, but a general and intuitive framework is still lacking. Here, we give an exact formulation of the measurable signals in SNOM which is easily applicable to experimental configurations. Our results are in close analogy with the description Tersoff and Hamann have derived for the tunneling currents in scanning tunneling microscopy. For point-like scattering probe tips, such as used in apertureless SNOM, the theory simplifies dramatically to a single scalar relation. We find that the measured signal is directly proportional to the field of the coupled tip-sample system at the position of the tip. For weakly interacting probes, the model thus verifies the empirical findings that the recorded signal is proportional to the unperturbed field of the bare sample. In the more general case, it provides guidance to an intuitive and faithful interpretation of recorded images, facilitating the characterization of tip-related distortions and the evaluation of novel SNOM configurations, both for aperture-based and apertureless SNOM.

Scanning tunneling spectroscopy on heavy-fermion systems; Rastertunnelspektroskopie an Schwere-Fermionen-Systemen

Energy Technology Data Exchange (ETDEWEB)

Ernst, Stefan

2011-06-24

in the framework of this thesis different heavy-fermion systems were studied by means of scanning tunneling microscopy and spectroscopy. In the experiment two main topics existed. On the one hand the heavy-fermion superconductivity in the compounds CeCu{sub 2}Si{sub 2}, CeCoIn{sub 5}, and on the other hand the Kondo effect in the Kondo-lattice system YbRh{sub 2}Si{sub 2}.

Spin-dependent tunnelling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

2003-01-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

Multi-level communication of human retinal pigment epithelial cells via tunneling nanotubes.

Directory of Open Access Journals (Sweden)

Dierk Wittig

Full Text Available BACKGROUND: Tunneling nanotubes (TNTs may offer a very specific and effective way of intercellular communication. Here we investigated TNTs in the human retinal pigment epithelial (RPE cell line ARPE-19. Morphology of TNTs was examined by immunostaining and scanning electron microscopy. To determine the function of TNTs between cells, we studied the TNT-dependent intercellular communication at different levels including electrical and calcium signalling, small molecular diffusion as well as mitochondrial re-localization. Further, intercellular organelles transfer was assayed by FACS analysis. METHODOLOGY AND PRINCIPAL FINDINGS: Microscopy showed that cultured ARPE-19 cells are frequently connected by TNTs, which are not attached to the substratum. The TNTs were straight connections between cells, had a typical diameter of 50 to 300 nm and a length of up to 120 µm. We observed de novo formation of TNTs by diverging from migrating cells after a short time of interaction. Scanning electron microscopy confirmed characteristic features of TNTs. Fluorescence microscopy revealed that TNTs between ARPE-19 cells contain F-actin but no microtubules. Depolymerisation of F-actin, induced by addition of latrunculin-B, led to disappearance of TNTs. Importantly, these TNTs could function as channels for the diffusion of small molecules such as Lucifer Yellow, but not for large molecules like Dextran Red. Further, organelle exchange between cells via TNTs was observed by microscopy. Using Ca²⁺ imaging we show the intercellular transmission of calcium signals through TNTs. Mechanical stimulation led to membrane depolarisation, which expand through TNT connections between ARPE-19 cells. We further demonstrate that TNTs can mediate electrical coupling between distant cells. Immunolabelling for Cx43 showed that this gap junction protein is interposed at one end of 44% of TNTs between ARPE-19 cells. CONCLUSIONS AND SIGNIFICANCE: Our observations indicate that

Scanning Tunneling Microscopy Study of Carbon Tetrachloride Adsorption and Degradation on a Natural a-Fe2O3(0001) Surface in Ultrahigh Vacuum

Science.gov (United States)

Taeg Rim, Kwang; Fitts, Jeffrey; Adib, Kaveh; Camillone, Nicholas, III; Schlosser, Peter; Osgood, Richard, Jr.; Flynn, George; Joyce, Stephen

2001-03-01

Scanning tunneling microscopy and low energy electron diffraction have been used to study a natural a-Fe2O3(0001) surface and the adsorption and degradation of carbon tetrachloride on the reduced Fe3O4(111) terminated surface. A natural a-Fe2O3 (0001) surface was prepared by repeated cycles of Ar+ ion sputtering and annealing in vacuum or in O2 at 850 K. STM images and a LEED pattern indicate that an Fe3O4(111) terminated surface and a bi-phase can be formed depending on annealing conditions. The Fe3O4(111) terminated surface was dosed with CCl4 at room temperature, and flashed up to 590 K and 850 K. STM images show adsorbates on the surface at room temperature and the degradation products of CCl4 are isolated on the surface as the flashing temperature increases up to 850 K. Results from a companion temperature programmed desorption investigation are used in conjunction with the STM images to propose site specific reactions of CCl4 on the Fe3O4(111) terminated surface.

Tunnel fire dynamics

CERN Document Server

Ingason, Haukur; Lönnermark, Anders

2015-01-01

This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

Coherence in Magnetic Quantum Tunneling

Science.gov (United States)

Fernandez, Julio F.

2001-03-01

Crystals of single molecule magnets such as Mn_12 and Fe8 behave at low temperatures as a collection of independent spins. Magnetic anisotropy barriers slow down spin-flip processes. Their rate Γ becomes temperature independent at sufficiently low temperature. Quantum tunneling (QT) accounts for this behavior. Currently, spin QT in Mn_12 and Fe8 is assumed to proceed as an incoherent sum of small probability increments that occur whenever a bias field h(t) (arising from hyperfine interactions with nuclear spins) that varies with time t becomes sufficiently small, as in Landau-Zener transitions. Within a two-state model, we study the behavior of a suitably defined coherence time τ_φ and compare it with the correlation time τh for h(t). It turns out that τ_φ >τ_h, when τ_hδ h < hbar, where δ h is the rms deviation of h. We show what effect such coherence has on Γ. Its dependence on a static longitudinal applied field Hz is drastically affected. There is however no effect if the field is swept through resonance.

Proton tunneling in solids

Energy Technology Data Exchange (ETDEWEB)

Kondo, J.

1998-10-01

The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

Proton tunneling in solids

International Nuclear Information System (INIS)

Kondo, J.

1998-01-01

The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

Scanning tunneling microscopy/scanning tunneling spectroscopy of the organic superconductors (TNTSF)2-PF6 and (TMTSF)2-ClO4

International Nuclear Information System (INIS)

Fainchtein, R.; Murphy, J.C.

1991-01-01

This paper reports on direct observations of the organic superconductors (tetramethyltetraselenafulvalene) (TMTSF) 2 -PF 6 and (TMTSF) 2 -ClO 4 made in air at room temperature. The samples consisted of single crystals electrochemically grown. Images revealing the molecular structural arrangement along different crystallographic orientations will be presented as well as spectroscopic data related to the electronic density of states. The images reveal a structure made up of flat molecules that stack on top of one another to form columns and are responsible for the quasi-one-dimensional nature of the electrical conductivity. Although both materials have similar crystal structure the differences in the symmetry and orientation of the counter anions are not resolved. Tunneling spectroscopy data at room temperature shows no apparent difference in the electronic density of states of both materials

Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

International Nuclear Information System (INIS)

Naaman, O.; Teizer, W.; Dynes, R. C.

2001-01-01

We demonstrate Josephson tunneling in vacuum tunnel junctions formed between a superconducting scanning tunneling microscope tip and a Pb film, for junction resistances in the range 50--300 k Omega. We show that the superconducting phase dynamics is dominated by thermal fluctuations, and that the Josephson current appears as a peak centered at small finite voltage. In the presence of microwave fields (f=15.0 GHz) the peak decreases in magnitude and shifts to higher voltages with increasing rf power, in agreement with theory

Bimetallic Catalysts and Platinum Surfaces Studied by X-ray Absorption Spectroscopy and Scanning Tunnelling Microscopy

Energy Technology Data Exchange (ETDEWEB)

Roenning, Magnus

2000-07-01

Bimetallic catalyst systems used in Fischer-Tropsch synthesis (Co-Re/Al{sub 2}O{sub 3}) and in the naphtha reforming process (Pt-Re/Al{sub 2}O{sub 3}) have been studied in situ using X-ray absorption spectroscopy (EXAFS). Additionally, the adsorption of ethene on platinum single crystal surfaces has been investigated using scanning tunnelling microscopy. In situ EXAFS at the cobalt K absorption edge have been carried out at 450{sup o}C on the hydrogen reduction of a rhenium-promoted Co{sub 3}O{sub 4}/Al{sub 2}O{sub 3} catalyst. Reductions carried out using 100% hydrogen and 5% hydrogen in helium gave different results. Whereas the reduction using dilute hydrogen leads to bulk-like metallic cobalt particles (hcp or fcc), reaction with pure hydrogen yields a more dispersed system with smaller cobalt metal particles (< 40 A). The results are rationalised in terms of different degrees of reoxidation of cobalt by the higher and lower concentrations of water generated during the reduction of cobalt oxide by 100% and 5% hydrogen, respectively. Additionally, in both reduction protocols a small fraction (3 -4 wt%) of the cobalt content is randomly dispersed over the tetrahedral vacancies of the alumina support. This dispersion occurs during reduction and not calcination. The cobalt in these sites cannot be reduced at 450 {sup o}C. The local environments about the rhenium atoms in Co-Re/{gamma}-A1{sub 2}O{sub 3} catalyst after different reduction periods have been studied by X-ray absorption spectroscopy. A bimetallic catalyst containing 4.6 wt% cobalt and 2 wt% rhenium has been compared with a corresponding monometallic sample with 2 wt% rhenium on the same support. The rhenium L{sub III} EXAFS analysis shows that bimetallic particles are formed after reduction at 450{sup o}C with the average particle size being 10-15 A. Rhenium is shown to be reduced at a later stage than cobalt. The fraction of cobalt atoms entering the support obstructs the access to the support for the

The ISI Tunnel

Science.gov (United States)

1993-10-01

DP /etc/tunnelvisa p zephyr dark -star TCP /etc/tunnelvisa p zephyr dak’star ICMP /etc/tunnelvisa p zephyr quark MDP /etc/tunnelvisa p zephyr quark ...drax-net-yp 128.9.32.2 1 route add quark -net-yp 128.9.32.3 1 route add vlsi-net-yp 128.9.32.4 1 route add darkstar-net-yp 128.9.32.3 1 route add rocky...TCP /etc/tunnel-visa p zephyr quark ICMP /etc/tunnel-visa p zephyr drax tTI)P /etc/tunnel-visa p zephyr drax TCP /etc/tunnel_visa p zephyr drax ICMP

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

2011-01-01

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-07-15

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

Tunneling through landsliding zone; Jisuberi chitainai no tunnel seko

Energy Technology Data Exchange (ETDEWEB)

Konbu, A; Hatabu, K; Kano, T [Tekken Corp., Tokyo (Japan)

1994-08-01

At the new tunnel construction site of the Shirakata tunnel on the Obama line in Yamaguchi Prefecture, a landsliding occurred at about 60 meters to the upper portion obliquely to the right hand side of the shaft when the excavation progressed to about 10 meters from the starting side. The landslide caused displacement at the shaft opening and change in the supports. As a result of the re-investigation, it was confirmed that the slide face went through the tunnel cross section. The measures taken were removal of the upper soil and an adoption of the all ground fastening (AGF) method (injection type long tip fastening method) as an auxiliary construction to stop loosening of the natural ground associated with the tunnel excavation. The result was a completion of tunneling the landsliding zone without a problem. This paper reports the AGF method adopted in the above construction, together with the construction works and natural ground conditions. The AGF method is about the same as the pipe roof method with regard to the natural ground accepting mechanism and the materials used. The difference is building an improved body in a limited area in the natural ground around the steel pipes by injecting the fixing material. The use of this method caused no problems in subsidence and displacement in the surrounding ground, and completed the tunneling construction without an unusual event. 1 ref., 7 figs., 2 tabs.

Multilayered cuprate superconductor Ba2Ca5Cu6O12(O1-x,Fx) 2 studied by temperature-dependent scanning tunneling microscopy and spectroscopy

Science.gov (United States)

Sugimoto, Akira; Ekino, Toshikazu; Gabovich, Alexander M.; Sekine, Ryotaro; Tanabe, Kenji; Tokiwa, Kazuyasu

2017-05-01

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements were carried out on a multilayered cuprate superconductor Ba2Ca5Cu6O12 (O1 -x,Fx )2. STM topography revealed random spot structures with the characteristic length ≤0.5 nm. The conductance spectra d I /d V (V ) show the coexistence of smaller gaps ΔS and large gaps (pseudogaps) ΔL. The pseudogap-related features in the superconducting state were traced with the spatial resolution of ˜0.07 nm. Here, I and V are the tunnel current and bias voltage, respectively. The temperature, T , dependence of ΔS follows the reduced Bardeen-Cooper-Schrieffer (BCS) dependence. The hallmark ratio 2 ΔS(T =0 ) /kBTc equals to 4.9, which is smaller than those of other cuprate superconductors. Here, Tc is the superconducting critical temperature and kB is the Boltzmann constant. The larger gap ΔL survives in the normal state and even increases with T above Tc. The T dependencies of the spatial distributions for both relevant gaps (Δ map), as well as for each gap separately (ΔS and ΔL), were obtained. From the histogram of Δ map, the averaged gap values were found to be Δ¯S=˜24 meV and Δ¯L=˜79 meV. The smaller gap ΔS shows a spatially homogeneous distribution while the larger gap ΔL is quite inhomogeneous, indicating that rather homogeneous superconductivity coexists with the patchy distributed pseudogap. The spatial variation length ξΔ L of ΔL correlates with the scale of the topography spot structures, being approximately 0.4 nm. This value is considerably smaller than the coherence length of this class of superconductors, suggesting that ΔL is strongly affected by the disorder of the apical O/F.

Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

International Nuclear Information System (INIS)

Gajewski, Krzysztof; Piasecki, Tomasz; Kopiec, Daniel; Gotszalk, Teodor

2017-01-01

Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown. (paper)

Investigations on the electronic surface properties of the stoichiometric superconductor LiFeAs using scanning tunneling microscopy and spectroscopy

International Nuclear Information System (INIS)

Schlegel, Ronny

2014-01-01

This work presents scanning tunneling microscopy and spectroscopy investigations on the stoichiometric superconductor lithium iron arsenide (LiFeAs). To reveal the electronic properties, measurements on defect-free surfaces as well as near defects have been performed. The former shows a shift of atomic position with respect to the applied bias voltage. Furthermore, temperature dependent spectroscopic measurements indicate the coupling of quasiparticles in the vicinity of the superconducting coherence peaks. LiFeAs surfaces influenced by atomic defects show a spacial variation of the superconducting gap. The defects can be characterized by their symmetry and thus can be assigned to a position in the atomic lattice. Detailed spectroscopic investigations of defects reveal their influence on the quasiparticle density of states. In particular, Fe-defects show a small effect on the superconductivity while As-defects strongly disturb the superconducting gap. Measurements in magnetic field have been performed for the determination of the Ginzburg-Landau coherence length ξ GL . For this purpose, a suitable fit-function has been developed in this work. This function allows to fit the differential conductance of a magnetic vortex at E F . The fit results in a coherence length of ξ GL = 3,9 nm which corresponds to an upper critical field of 21 Tesla. Besides measurements on a single vortex, investigation on the vortex lattice have been performed. The vortex lattice constant follows thereby the predicted behavior of a trigonal vortex lattice. However, for magnetic fields larger than 6 Tesla an increasing lattice disorder sets in, presumably due to vortex-vortex-interactions.

Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope

International Nuclear Information System (INIS)

Wang, Fei; Clément, Nicolas; Ducatteau, Damien; Troadec, David; Legrand, Bernard; Dambrine, Gilles; Théron, Didier; Tanbakuchi, Hassan

2014-01-01

We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an ‘on-chip’ calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices. (paper)

Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

NARCIS (Netherlands)

Jansen, R.; Lodder, J.C.

2000-01-01

Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

Combined spectroscopy and microscopy of supported MoS2 nanoparticles

DEFF Research Database (Denmark)

Nielsen, Jane Hvolbæk; Bech, Lone; Nielsen, Kenneth

2009-01-01

Supported molybdenum-sulfide nanoparticles are known catalysts for petroleum hydrodesulfurization as well as for electrochemical hydrogen evolution. In this study, we investigate molybdenum-sulfide nanoparticles supported on Au(111) using X-ray photoelectron spectroscopy (XPS) and scanning...... tunneling microscopy (STM), aiming to correlate spectroscopically determined chemical states with atomically resolved nanostructure. The results of this study allow us to conclude the following: (1) the XPS results from our model system are in good agreement with previously published results on supported Mo...

Quantum tunneling time

International Nuclear Information System (INIS)

Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.

2004-01-01

We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes

Electron transfer kinetics of cytochrome c immobilized on a phenolic terminated thiol self assembled monolayer determined by scanning electrochemical microscopy

International Nuclear Information System (INIS)

Alizadeh, Vali; Mousavi, Mir Fazlollah; Mehrgardi, Masoud Ayatollahi; Kazemi, Sayed Habib; Sharghi, Hashem

2011-01-01

Highlights: → Preparing a thiolated phenolic self-assembled monolayer surface (SAM). → Application of this SAM to immobilize cytochrome C. → Scanning electrochemical microscopy used for these studies. → Determination of both tunneling electron transfer and bimolecular rate constants between the immobilized protein-substrate and probe. - Abstract: In the present manuscript, the electrochemical behavior of cytochrome c (cyt-c) immobilized onto a phenolic terminated self assembled monolayer (SAM) on a gold electrode is investigated using cyclic voltammetry (CV) and scanning electrochemical microscopy (SECM). The tunneling electron transfer (ET) rate constant between the immobilized protein and the underlying electrode surface, and also the bimolecular ET rate constant between the immobilized protein and a probe has been obtained using approach curves that were obtained by SECM. The approach curves were recorded at different substrate overpotentials in the presence of various concentrations of ferrocyanide as a probe and various surface concentrations of cyt-c; then the standard tunneling ET and bimolecular rate constants are obtained as 3.4 ± 0.3 s -1 and (2.0 ± 0.5) x 10 7 cm 3 mol -1 s -1 , respectively.

Electron transfer kinetics of cytochrome c immobilized on a phenolic terminated thiol self assembled monolayer determined by scanning electrochemical microscopy

Energy Technology Data Exchange (ETDEWEB)

Alizadeh, Vali [Department of Chemistry, Tarbiat Modares University, P.O. Box 14115-175, Tehran (Iran, Islamic Republic of); Mousavi, Mir Fazlollah, E-mail: mousavim@modares.ac.ir [Department of Chemistry, Tarbiat Modares University, P.O. Box 14115-175, Tehran (Iran, Islamic Republic of); Mehrgardi, Masoud Ayatollahi [Department of Chemistry, University of Isfahan, Isfahan (Iran, Islamic Republic of); Kazemi, Sayed Habib [Department of Chemistry, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan (Iran, Islamic Republic of); Sharghi, Hashem [Department of Chemistry, Shiraz University, Shiraz (Iran, Islamic Republic of)

2011-07-01

Highlights: > Preparing a thiolated phenolic self-assembled monolayer surface (SAM). > Application of this SAM to immobilize cytochrome C. > Scanning electrochemical microscopy used for these studies. > Determination of both tunneling electron transfer and bimolecular rate constants between the immobilized protein-substrate and probe. - Abstract: In the present manuscript, the electrochemical behavior of cytochrome c (cyt-c) immobilized onto a phenolic terminated self assembled monolayer (SAM) on a gold electrode is investigated using cyclic voltammetry (CV) and scanning electrochemical microscopy (SECM). The tunneling electron transfer (ET) rate constant between the immobilized protein and the underlying electrode surface, and also the bimolecular ET rate constant between the immobilized protein and a probe has been obtained using approach curves that were obtained by SECM. The approach curves were recorded at different substrate overpotentials in the presence of various concentrations of ferrocyanide as a probe and various surface concentrations of cyt-c; then the standard tunneling ET and bimolecular rate constants are obtained as 3.4 {+-} 0.3 s{sup -1} and (2.0 {+-} 0.5) x 10{sup 7} cm{sup 3} mol{sup -1} s{sup -1}, respectively.

Measuring fire size in tunnels

International Nuclear Information System (INIS)

Guo, Xiaoping; Zhang, Qihui

2013-01-01

A new measure of fire size Q′ has been introduced in longitudinally ventilated tunnel as the ratio of flame height to the height of tunnel. The analysis in this article has shown that Q′ controls both the critical velocity and the maximum ceiling temperature in the tunnel. Before the fire flame reaches tunnel ceiling (Q′ 1.0), Fr approaches a constant value. This is also a well-known phenomenon in large tunnel fires. Tunnel ceiling temperature shows the opposite trend. Before the fire flame reaches the ceiling, it increases very slowly with the fire size. Once the flame has hit the ceiling of tunnel, temperature rises rapidly with Q′. The good agreement between the current prediction and three different sets of experimental data has demonstrated that the theory has correctly modelled the relation among the heat release rate of fire, ventilation flow and the height of tunnel. From design point of view, the theoretical maximum of critical velocity for a given tunnel can help to prevent oversized ventilation system. -- Highlights: • Fire sizing is an important safety measure in tunnel design. • New measure of fire size a function of HRR of fire, tunnel height and ventilation. • The measure can identify large and small fires. • The characteristics of different fire are consistent with observation in real fires

Microwave-induced co-tunneling in single electron tunneling transistors

DEFF Research Database (Denmark)

Ejrnaes, M.; Savolainen, M.; Manscher, M.

2002-01-01

on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

International Nuclear Information System (INIS)

Jiang Zhi; Zhuang Yi-Qi; Li Cong; Wang Ping; Liu Yu-Qi

2016-01-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D it ) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. (paper)

Thermally oxidized Inconel 600 and 690 nickel-based alloys characterizations by combination of global photoelectrochemistry and local near-field microscopy techniques (STM, STS, AFM, SKPFM)

Science.gov (United States)

Mechehoud, F.; Benaioun, N. E.; Hakiki, N. E.; Khelil, A.; Simon, L.; Bubendorff, J. L.

2018-03-01

Thermally oxidized nickel-based alloys are studied by scanning tunnelling microscopy (STM), scanning tunnelling spectroscopy (STS), atomic force microscopy (AFM), scanning kelvin probe force microscopy (SKPFM) and photoelectro-chemical techniques as a function of oxidation time at a fixed temperature of 623 K. By photoelectrochemistry measurements we identify the formation of three oxides NiO, Fe2O3, Cr2O3 and determine the corresponding gap values. We use these values as parameter for imaging the surface at high bias voltage by STM allowing the spatial localization and identification of both NiO, Fe2O3 oxide phases using STS measurements. Associated to Kelvin probe measurements we show also that STS allow to distinguished NiO from Cr2O3 and confirm that the Cr2O3 is not visible at the surface and localized at the oxide/steel interface.

Asian conference on x-rays and related techniques in research and industry. Proceedings

International Nuclear Information System (INIS)

1996-01-01

This proceedings compile the paper presented at the conference. The papers for presentation are from wide spectrum stressing the interdisciplinary nature of the conference i.e. x-ray fluorescence spectrometry (XRF), x-ray diffraction (XRD), TEM, scanning electron microscope (SEM), energy dispersive x-ray (EDX), auger electron microscopy, electron back scatter diffraction (EBSD)

Three axis vector magnet set-up for cryogenic scanning probe microscopy

International Nuclear Information System (INIS)

Galvis, J. A.; Herrera, E.; Buendía, A.; Guillamón, I.; Vieira, S.; Suderow, H.; Azpeitia, J.; Luccas, R. F.; Munuera, C.; García-Hernandez, M.

2015-01-01

We describe a three axis vector magnet system for cryogenic scanning probe microscopy measurements. We discuss the magnet support system and the power supply, consisting of a compact three way 100 A current source. We obtain tilted magnetic fields in all directions with maximum value of 5T along z-axis and of 1.2T for XY-plane magnetic fields. We describe a scanning tunneling microscopy-spectroscopy (STM-STS) set-up, operating in a dilution refrigerator, which includes a new high voltage ultralow noise piezodrive electronics and discuss the noise level due to vibrations. STM images and STS maps show atomic resolution and the tilted vortex lattice at 150 mK in the superconductor β-Bi 2 Pd. We observe a strongly elongated hexagonal lattice, which corresponds to the projection of the tilted hexagonal vortex lattice on the surface. We also discuss Magnetic Force Microscopy images in a variable temperature insert

Three axis vector magnet set-up for cryogenic scanning probe microscopy

Energy Technology Data Exchange (ETDEWEB)

Galvis, J. A. [Laboratorio de Bajas Temperaturas, Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera, Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias Universidad Autónoma de Madrid, 28049 Madrid (Spain); Departamento de Ciencias Naturales Facultad de Ingeniería Universidad Central, Bogotá (Colombia); Herrera, E.; Buendía, A. [Laboratorio de Bajas Temperaturas, Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera, Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias Universidad Autónoma de Madrid, 28049 Madrid (Spain); Guillamón, I.; Vieira, S.; Suderow, H. [Laboratorio de Bajas Temperaturas, Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera, Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias Universidad Autónoma de Madrid, 28049 Madrid (Spain); Unidad Asociada de Bajas Temperaturas y Altos Campos Magnéticos, UAM, CSIC, Cantoblanco, E-28049 Madrid (Spain); Azpeitia, J.; Luccas, R. F.; Munuera, C.; García-Hernandez, M. [Unidad Asociada de Bajas Temperaturas y Altos Campos Magnéticos, UAM, CSIC, Cantoblanco, E-28049 Madrid (Spain); Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); and others

2015-01-15

We describe a three axis vector magnet system for cryogenic scanning probe microscopy measurements. We discuss the magnet support system and the power supply, consisting of a compact three way 100 A current source. We obtain tilted magnetic fields in all directions with maximum value of 5T along z-axis and of 1.2T for XY-plane magnetic fields. We describe a scanning tunneling microscopy-spectroscopy (STM-STS) set-up, operating in a dilution refrigerator, which includes a new high voltage ultralow noise piezodrive electronics and discuss the noise level due to vibrations. STM images and STS maps show atomic resolution and the tilted vortex lattice at 150 mK in the superconductor β-Bi{sub 2}Pd. We observe a strongly elongated hexagonal lattice, which corresponds to the projection of the tilted hexagonal vortex lattice on the surface. We also discuss Magnetic Force Microscopy images in a variable temperature insert.

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot

Czech Academy of Sciences Publication Activity Database

Yamazaki, S.; Maeda, K.; Sugimoto, Y.; Abe, M.; Zobač, Vladimír; Pou, P.; Rodrigo, L.; Mutombo, Pingo; Perez, R.; Jelínek, Pavel; Morita, S.

2015-01-01

Roč. 15, č. 7 (2015), 4356-4363 ISSN 1530-6984 R&D Projects: GA ČR(CZ) GA14-02079S Institutional support: RVO:68378271 Keywords : atomic manipulation * atomic switch * Si quantum dot * scanning tunneling microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.779, year: 2015

About tunnelling times

International Nuclear Information System (INIS)

Olkhovsky, V.S.; Recami, E.

1991-08-01

In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

Tenth target fabrication specialists' meeting: Proceedings

International Nuclear Information System (INIS)

Foreman, L.R.; Stark, J.C.

1995-01-01

This tenth meeting of specialists in target fabrication for inertial confinement is unique in that it is the first meeting that was completely unclassified. As a result of the new classification, we were able to invite more foreign participation. In addition to participants from the US, UK, and Canada, representatives from France, Japan, and two Russian laboratories attended, about 115 in all. This booklet presents full papers and poster sessions. Indirect and direct drive laser implosions are considered. Typical topics include: polymer or aluminium or resorcinol/formaldehyde shells, laser technology, photon tunneling microscopy as a characterization tool, foams, coatings, hohlraums, and beryllium capsules. Hydrogen, deuterium, tritium, and beryllium are all considered as fuels

Tenth target fabrication specialists` meeting: Proceedings

Energy Technology Data Exchange (ETDEWEB)

Foreman, L.R.; Stark, J.C. [comp.

1995-11-01

This tenth meeting of specialists in target fabrication for inertial confinement is unique in that it is the first meeting that was completely unclassified. As a result of the new classification, we were able to invite more foreign participation. In addition to participants from the US, UK, and Canada, representatives from France, Japan, and two Russian laboratories attended, about 115 in all. This booklet presents full papers and poster sessions. Indirect and direct drive laser implosions are considered. Typical topics include: polymer or aluminium or resorcinol/formaldehyde shells, laser technology, photon tunneling microscopy as a characterization tool, foams, coatings, hohlraums, and beryllium capsules. Hydrogen, deuterium, tritium, and beryllium are all considered as fuels.

Tunneling current between graphene layers

OpenAIRE

Poklonski, Nikolai A.; Siahlo, Andrei I.; Vyrko, Sergey A.; Popov, Andrey M.; Lozovik, Yurii E.

2013-01-01

The physical model that allows to calculate the values of the tunneling current be-tween graphene layers is proposed. The tunneling current according to the pro-posed model is proportional to the area of tunneling transition. The calculated value of tunneling conductivity is in qualitative agreement with experimental data.

Drill and blast tunnelling; Konvensjonell drift av tunneler

Energy Technology Data Exchange (ETDEWEB)

Roenn, Paal-Egil

1997-12-31

This thesis treats drill and blast tunnelling. The rapid technological advance necessitates revised and updated design criteria, quality requirements and quality control. In situ blast experiments were carried out in order to test new methods and improve the basis for calculation and design. The main topics of the experiments were (1) longer rounds and increased drillhole diameter, (2) emulsion slurry as explosives in tunnelling, and (3) electronic detonators in contour blasting. The experiments show that it is technically feasible to blast rounds of up to 8.6 m length. Using current technology, the economical optimum round length is substantially shorter. Dust, low visibility, noise and toxic fumes are occupational environmental strains for the tunnel workers. Several of the environmental factors are strongly influenced by the type of explosives used. For example, emulsion slurry resulted in 4 to 5 times better visibility than Anolit and the concentration of respirable dust and total dust was reduced by 30-50 %. Electronic detonators were tested and found to give a higher percentage of remaining drillholes in the contour than Nonel detonators. The thesis includes a chapter on economic design of hydropower tunnels. 42 refs., 83 figs., 45 tabs.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.

2011-08-24

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

2011-01-01

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Molecular assembly and electro polymerization of 3,4-ethylenedioxy thiophene on Au(100) single crystal electrode using in-situ electrochemical scanning tunneling microscopy

International Nuclear Information System (INIS)

Garcia, Jonyl L.; Tongol, Bernard John V.; ShuehLin Yau

2012-01-01

Electrochemical scanning tunneling microscopy (Ec-STM) is a powerful technique that can provide molecular-level information regarding electrode surface processes in-situ in electrolyte solvent under ambient conditions. In this study, the adsorption and electro polymerization of an industrially important conducting polymer precursor, 3,4-ethylenedioxy thiophene (EDOT), on Au (100) single crystal was probed using Ec-STM. The Au (100) single crystal electrode substrate used for this study was fabricated using the well-known Clavilier's flame melting procedure. Cyclic voltammetry (CV) was used along with Ec-STM to characterize the bare, EDOT-modified, and poly(EDOT)-modified Au (100) single crystal electrode. Time-dependent Ec-STM imaging at 0.550 V showed the formation of an EDOT self-assembled monolayer through 2-D surface dillusion. The resulting EDOT molecular assembly on Au (100) single crystal electrode was found to fit in a 4√2χ3√2 unit cell. Difference in apparent corrugation between molecular rows was attributed to different angular orientation with respect to the substrate. The electro polymerization of EDOT on Au (100) single crystal electrode was done by potentiostatic and potentiodynamic methods. Both methods suggested a solution-process mechanism for EDOT electro polymerization. (author)

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

OpenAIRE

Saffarzadeh, Alireza; Daqiq, Reza

2009-01-01

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

High resolution, high speed ultrahigh vacuum microscopy

International Nuclear Information System (INIS)

Poppa, Helmut

2004-01-01

The history and future of transmission electron microscopy (TEM) is discussed as it refers to the eventual development of instruments and techniques applicable to the real time in situ investigation of surface processes with high resolution. To reach this objective, it was necessary to transform conventional high resolution instruments so that an ultrahigh vacuum (UHV) environment at the sample site was created, that access to the sample by various in situ sample modification procedures was provided, and that in situ sample exchanges with other integrated surface analytical systems became possible. Furthermore, high resolution image acquisition systems had to be developed to take advantage of the high speed imaging capabilities of projection imaging microscopes. These changes to conventional electron microscopy and its uses were slowly realized in a few international laboratories over a period of almost 40 years by a relatively small number of researchers crucially interested in advancing the state of the art of electron microscopy and its applications to diverse areas of interest; often concentrating on the nucleation, growth, and properties of thin films on well defined material surfaces. A part of this review is dedicated to the recognition of the major contributions to surface and thin film science by these pioneers. Finally, some of the important current developments in aberration corrected electron optics and eventual adaptations to in situ UHV microscopy are discussed. As a result of all the path breaking developments that have led to today's highly sophisticated UHV-TEM systems, integrated fundamental studies are now possible that combine many traditional surface science approaches. Combined investigations to date have involved in situ and ex situ surface microscopies such as scanning tunneling microscopy/atomic force microscopy, scanning Auger microscopy, and photoemission electron microscopy, and area-integrating techniques such as x-ray photoelectron

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Science.gov (United States)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

DEFF Research Database (Denmark)

Settnes, Mikkel; Power, Stephen R.; Petersen, Dirch Hjorth

2014-01-01

Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunneling microscopy using a Green's function formalism, and apply it to graphene. Sampling the local conduction properties at finite...... to different scattering processes. We compute the conductance maps of graphene systems with different edge geometries or height fluctuations to determine the effects of nonideal graphene samples on dual-probe measurements. © 2014 American Physical Society....

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Science.gov (United States)

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

2015-02-01

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.

Electrical installations of the Channel tunnel; Installations electriques du Tunnel sous la Manche

Energy Technology Data Exchange (ETDEWEB)

Kersabiec, G. de [Eurotunnel, Folkestone (United Kingdom)

2002-08-01

Like an underground factory, the railway and auxiliary equipments of the Channel tunnel between France and UK, need a reliable and redundant power supply with a high quality maintenance. This article presents: the design criteria of the power distribution systems, the installation itself and the organisation of its exploitation: 1 - transportation system of the Channel tunnel (loads to supply, exploitation imperatives, fundamental criteria); 2 - external power sources (connection to the UK and French grids, values used by the national grids); 3 - exploitation criteria, tunnel design; 4 - description (main UK and French power stations, 25 kV traction network, 21 kV distribution network, tunnels, lighting in railway tunnels, supply of terminals, earthing network); 5 - exploitation; 6 - maintenance and quality. (J.S.)

Heavy-Atom Tunneling Calculations in Thirteen Organic Reactions: Tunneling Contributions are Substantial, and Bell's Formula Closely Approximates Multidimensional Tunneling at ≥250 K.

Science.gov (United States)

Doubleday, Charles; Armas, Randy; Walker, Dana; Cosgriff, Christopher V; Greer, Edyta M

2017-10-09

Multidimensional tunneling calculations are carried out for 13 reactions, to test the scope of heavy-atom tunneling in organic chemistry, and to check the accuracy of one-dimensional tunneling models. The reactions include pericyclic, cycloaromatization, radical cyclization and ring opening, and S N 2. When compared at the temperatures that give the same effective rate constant of 3×10 -5  s -1 , tunneling accounts for 25-95 % of the rate in 8 of the 13 reactions. Values of transmission coefficients predicted by Bell's formula, κ Bell  , agree well with multidimensional tunneling (canonical variational transition state theory with small curvature tunneling), κ SCT . Mean unsigned deviations of κ Bell vs. κ SCT are 0.08, 0.04, 0.02 at 250, 300 and 400 K. This suggests that κ Bell is a useful first choice for predicting transmission coefficients in heavy-atom tunnelling. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Science.gov (United States)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

Science.gov (United States)

Nazin, G V; Wu, S W; Ho, W

2005-06-21

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

Breaking through the tranfer tunnel

CERN Document Server

Laurent Guiraud

2001-01-01

This image shows the tunnel boring machine breaking through the transfer tunnel into the LHC tunnel. Proton beams will be transferred from the SPS pre-accelerator to the LHC at 450 GeV through two specially constructed transfer tunnels. From left to right: LHC Project Director, Lyn Evans; CERN Director-General (at the time), Luciano Maiani, and Director for Accelerators, Kurt Hubner.

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

Jimy Encomendero

2017-10-01

Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

2004-01-01

A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

Histological Observation of Regions around Bone Tunnels after Compression of the Bone Tunnel Wall in Ligament Reconstruction

International Nuclear Information System (INIS)

Maeda, Shintaro; Ishikawa, Hiroki; Tanigawa, Naoaki; Miyazaki, Kyosuke; Shioda, Seiji

2012-01-01

The objectives of this study were to investigate the time-course of influence of compression of bone tunnel wall in ligament reconstruction on tissue around the bone tunnel and to histologically examine the mechanism of preventing the complication of bone tunnel dilation, using rabbit tibia. A model in which the femoral origin of the extensor digitorum longus tendon was cut and inserted into a bone tunnel made proximal to the tibia was prepared in the bilateral hind legs of 20 Japanese white rabbits. In each animal, a tunnel was made using a drill only in the right leg, while an undersized bone tunnel was made by drilling and then dilated by compression using a dilator to the same tunnel size as that in the right leg. Animals were sacrificed at 0, 2, 4, 8 and 12 weeks after surgery (4 animals at each time point). Observation of bone tunnels by X-ray radiography showed osteosclerosis in the 2- and 4-week dilation groups. Osteosclerosis appeared as white lines around the bone tunnel on X-ray radiography. This suggests that dilation promotes callus formation in the bone tunnel wall and prevents the complication of bone tunnel enlargement after ligament reconstruction

Insertion of the Biogenesis Factor Rei1 Probes the Ribosomal Tunnel during 60S Maturation.

Science.gov (United States)

Greber, Basil Johannes; Gerhardy, Stefan; Leitner, Alexander; Leibundgut, Marc; Salem, Michèle; Boehringer, Daniel; Leulliot, Nicolas; Aebersold, Ruedi; Panse, Vikram Govind; Ban, Nenad

2016-01-14

Eukaryotic ribosome biogenesis depends on several hundred assembly factors to produce functional 40S and 60S ribosomal subunits. The final phase of 60S subunit biogenesis is cytoplasmic maturation, which includes the proofreading of functional centers of the 60S subunit and the release of several ribosome biogenesis factors. We report the cryo-electron microscopy (cryo-EM) structure of the yeast 60S subunit in complex with the biogenesis factors Rei1, Arx1, and Alb1 at 3.4 Å resolution. In addition to the network of interactions formed by Alb1, the structure reveals a mechanism for ensuring the integrity of the ribosomal polypeptide exit tunnel. Arx1 probes the entire set of inner-ring proteins surrounding the tunnel exit, and the C terminus of Rei1 is deeply inserted into the ribosomal tunnel, where it forms specific contacts along almost its entire length. We provide genetic and biochemical evidence that failure to insert the C terminus of Rei1 precludes subsequent steps of 60S maturation. Copyright © 2016 Elsevier Inc. All rights reserved.

Tunnel fire testing and modeling the Morgex North tunnel experiment

CERN Document Server

Borghetti, Fabio; Gandini, Paolo; Frassoldati, Alessio; Tavelli, Silvia

2017-01-01

This book aims to cast light on all aspects of tunnel fires, based on experimental activities and theoretical and computational fluid dynamics (CFD) analyses. In particular, the authors describe a transient full-scale fire test (~15 MW), explaining how they designed and performed the experimental activity inside the Morgex North tunnel in Italy. The entire organization of the experiment is described, from preliminary evaluations to the solutions found for management of operational difficulties and safety issues. This fire test allowed the collection of different measurements (temperature, air velocity, smoke composition, pollutant species) useful for validating and improving CFD codes and for testing the real behavior of the tunnel and its safety systems during a diesel oil fire with a significant heat release rate. Finally, the fire dynamics are compared with empirical correlations, CFD simulations, and literature measurements obtained in other similar tunnel fire tests. This book will be of interest to all ...

Scanning tunneling microscopy of the atomically smooth (001) surface of vanadium pentoxide V{sub 2}O{sub 5} crystals

Energy Technology Data Exchange (ETDEWEB)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics” (Russian Federation)

2017-01-15

The (001) cleavage surface of vanadium pentoxide (V{sub 2}O{sub 5}) crystal has been studied by scanning tunneling spectroscopy (STM). It is shown that the surface is not reconstructed; the STM image allows geometric lattice parameters to be determined with high accuracy. The nanostructure formed on the (001) cleavage surface of crystal consists of atomically smooth steps with a height multiple of unit-cell parameter c = 4.37 Å. The V{sub 2}O{sub 5} crystal cleavages can be used as references in calibration of a scanning tunneling microscope under atmospheric conditions both along the (Ñ…, y) surface and normally to the sample surface (along the z axis). It is found that the terrace surface is not perfectly atomically smooth; its roughness is estimated to be ~0.5 Å. This circumstance may introduce an additional error into the microscope calibration along the z coordinate.

Tracheal reconstruction by re-inforced Gore-Tex in esophageal submuscular tunneling: An experimental study

Directory of Open Access Journals (Sweden)

Hodjati Hossein

2011-01-01

Full Text Available Background: Tracheal reconstructions are aimed at rearranging or replacing parts of the tracheal tissue by different techniques. Here we introduce a new technique for tracheal reconstruction. Methods: In 10 adult dogs, after intubation with an endotracheal tube, a segment of trachea including seven tracheal rings was resected circumferentially. A submuscular tunnel was induced between mucosal and muscular layers of the adjacent esophagus lying right next to the trachea. The esophageal submuscular tunnel starts and ends exactly at the level of distal and proximal ends of tracheal resection, respectively. Inforced Gore-Tex passed through the esophageal submuscular tunnel the distal segment of trachea and end-to-end anastomosis were made between distal ends of Gore-Tex and trachea, then endotracheal tube removed and the same procedure was made for proximal ends of Gore-Tex and trachea. Afterward, the proximal and distal ends of the esophageal tunnel were approximated to proximal and distal tracheal parts over the anastomosis. Results: All dogs, except one due to anesthetic problem, survived and tolerated the operation; the first two dogs experienced postoperative fever, aspiration pneumonia, and died due to tracheoesophageal fistula. All survived animals were eating and barking well. We started to scarify dogs at least 6 and 12 weeks after operation for microscopy and pathologic examination. The Gore-Texes were patent and supported externally with fibrous connective tissue in esophageal tunneling, with in growth of respiratory epithelium on inner surfaces. Conclusion: Air tightness, good re-epithelialization, and relatively no limitation of esophageal length and no risk of luminal collapse are advantages of tracheal reconstruction by submuscular esophageal tunneling. This new method is worthy of further investigation, as it is technically feasible and easy to implement.

Graphene-SnO2 nanocomposites decorated with quantum tunneling junctions: preparation strategies, microstructures and formation mechanism.

Science.gov (United States)

Wang, Qingxiu; Wu, Xianzheng; Wang, Lijun; Chen, Zhiwen; Wang, Shilong

2014-09-28

Tin dioxide (SnO2) and graphene are versatile materials that are vitally important for creating new functional and smart materials. A facile, simple and efficient ultrasonic-assisted hydrothermal synthesis approach has been developed to prepare graphene-SnO2 nanocomposites (GSNCs), including three samples with graphene/Sn weight ratios = 1 : 2 (GSNC-2), 1 : 1 (GSNC-1), and graphene oxide/Sn weight ratio = 1 : 1 (GOSNC-1). Low-magnification electron microscopy analysis indicated that graphene was exfoliated and adorned with SnO2 nanoparticles, which were dispersed uniformly on both the sides of the graphene nanosheets. High-magnification electron microscopy analysis confirmed that the graphene-SnO2 nanocomposites presented network tunneling frameworks, which were decorated with the SnO2 quantum tunneling junctions. The size distribution of SnO2 nanoparticles was estimated to range from 3 to 5.5 nm. Comparing GSNC-2, GSNC-1, and GOSNC-1, GOSNC-1 was found to exhibit a significantly better the homogeneous distribution and a considerably smaller size distribution of SnO2 nanoparticles, which indicated that it was better to use graphene oxide as a supporting material and SnCl4·5H2O as a precursor to synthesize hybrid graphene-SnO2 nanocomposites. Experimental results suggest that the graphene-SnO2 nanocomposites with interesting SnO2 quantum tunneling junctions may be a promising material to facilitate the improvement of the future design of micro/nanodevices.

Quantum mechanical tunneling in chemical physics

CERN Document Server

Nakamura, Hiroki

2016-01-01

Quantum mechanical tunneling plays important roles in a wide range of natural sciences, from nuclear and solid-state physics to proton transfer and chemical reactions in chemistry and biology. Responding to the need for further understanding of multidimensional tunneling, the authors have recently developed practical methods that can be applied to multidimensional systems. Quantum Mechanical Tunneling in Chemical Physics presents basic theories, as well as original ones developed by the authors. It also provides methodologies and numerical applications to real molecular systems. The book offers information so readers can understand the basic concepts and dynamics of multidimensional tunneling phenomena and use the described methods for various molecular spectroscopy and chemical dynamics problems. The text focuses on three tunneling phenomena: (1) energy splitting, or tunneling splitting, in symmetric double well potential, (2) decay of metastable state through tunneling, and (3) tunneling effects in chemical...

Tunneling into quantum wires: regularization of the tunneling Hamiltonian and consistency between free and bosonized fermions

OpenAIRE

Filippone, Michele; Brouwer, Piet

2016-01-01

Tunneling between a point contact and a one-dimensional wire is usually described with the help of a tunneling Hamiltonian that contains a delta function in position space. Whereas the leading order contribution to the tunneling current is independent of the way this delta function is regularized, higher-order corrections with respect to the tunneling amplitude are known to depend on the regularization. Instead of regularizing the delta function in the tunneling Hamiltonian, one may also obta...

Temperature dependent tunneling study of CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Dutta, Anirban, E-mail: adatta@iitk.ac.in; Gupta, Anjan K. [Department of Physics, IIT Kanpur, Kanpur-208 016 (India); Thamizhavel, A. [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

2014-04-24

We report on temperature dependent scanning tunneling microscopy and spectroscopy studies on CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals in 5.4 – 19.7 K temperature range across the normal metal - superconductor transition temperature, T{sub C} = 14K. The in-situ cleaved crystals show reasonably flat surface with signatures of atomic resolution. The tunnel spectra show significant spatial inhomogeneity below T{sub C}, which reduces significantly as the temperature goes above the T{sub C}. We discuss these results in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the quantum critical point.

Tunnelling of a molecule

International Nuclear Information System (INIS)

Jarvis, P.D.; Bulte, D.P.

1998-01-01

A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times t H and t BL , with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e -iω(t+Δt) , Δt = t H - it BL . A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia

Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

International Nuclear Information System (INIS)

Samedov, V. V.; Tulinov, B. M.

2011-01-01

Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

The study of optimal conditions of electrochemical etching of tunnel electron microscopy tungsten tips; Estudio de las condiciones optimas para la preparacion electroquimica de puntas de tungsteno para el Microscopio de Efecto Tunel

Energy Technology Data Exchange (ETDEWEB)

Anguiano, E; Aguilar, M [Instituto de Ciencia de Materiales del SCIC, Madrid (Spain); Olivar, A I [Centro de Investigacion y de Estudios Avanzados del IPN Unidad Merida. Departamento de fisica Aplicada, Yucatan, Mexico (Mexico)

1997-12-31

We present the experimental results obtained during the study made in the electrochemical etching of tunneling electron microscopy tungsten tips. The experiments was made using DC and two usual electrolytes: KOH and NaOH. For the tip preparation we used a electrochemical cell with stainless steel cathode and the tungsten wire as anode. the electrodes was introduced in a glass recipient containing the electrolytic solution. We study the effects of applied voltage, polish time, tip length and electrolyte concentration as process relevant parameters. The best condition for tip preparation was obtained with a metallurgical microscope and with a SEM.EDX and Auger analysis was made. The results shown the better tips was made with KOH as electrolyte with a limited concentration range (2-4 normal) and applied voltage (2-6 volts) (Author) 20 refs.

Enhanced MRI in carpal tunnel syndrome

International Nuclear Information System (INIS)

Hayakawa, Katsuhiko; Nakane, Takashi; Kobayashi, Shigeru; Asai, Takahiro; Wada, Kunio; Yoshizawa, Hidezo

1998-01-01

In this study, we performed contrast-enhanced MRI in patients with idiopathic carpal tunnel syndrome and examined the morphologic change in the carpal tunnel. In the transverse section of the opening of carpal tunnel where scaphoid and pisiform bones are figured out, we measured and examined 4 items, viz. the soft carpal tunnel volume, flat rate of median nerve, position of median nerve and thickness of palmer ligaments composing the base of carpal tunnel, with an image analyzer attached to the MRI apparatus. Whereas the average carpal tunnel volume in 12 hands of normal controls was 166.8 mm 2 , that in 74 hands of carpal tunnel syndrome was 207.2 mm 2 , a significant increase compared with the normal controls. The flat rate of median nerve was 46% in the controls, but that was 37.5% in the carpal tunnel syndrome, a significant flattening was noted. We connected the peaks of the scaphoid node and pisiform bone with a line and named it standard line. When we observed the position of median nerve in the carpal tunnel, the nerve in 9 of 12 hands, 75%, lay below the standard line in the controls, but the nerve in 65 of 74 hands, 87.8%, lay above the standard line in the carpal tunnel syndrome, clearly showing that the median nerve had shifted to the palmar side. Regarding these morphologic changes of the carpal tunnel, the internal pressure of the carpal tunnel is considered to be raised with swelling of the soft tissues mainly composing the inside of carpal tunnel, thus the area of cross section of carpal tunnel to be increased, the median nerve to be shifted to the palmar side and the median nerve to be compressed by the transverse carpal ligament at that time. Although we can observe these morphological changes readily in MRI images, these images show only the results of carpal tunnel syndrome after all, and do not specify the direct causes. However, we believe that these facts are important factors in the manifestation of idiopathic carpal tunnel syndrome. (author)

Josephson tunneling and nanosystems

OpenAIRE

Ovchinnikov, Yurii; Kresin, Vladimir

2010-01-01

Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.

Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

2005-01-01

The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

Control of tunneling in heterostructures

International Nuclear Information System (INIS)

Volokhov, V M; Tovstun, C A; Ivlev, B

2007-01-01

A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

A temperature dependent tunneling study of the spin density wave gap in EuFe2As2 single crystals.

Science.gov (United States)

Dutta, Anirban; Anupam; Hossain, Z; Gupta, Anjan K

2013-09-18

We report temperature dependent scanning tunneling microscopy and spectroscopy measurements on single crystals of EuFe2As2 in the 15-292 K temperature range. The in situ cleaved crystals show atomic terraces with homogeneous tunnel spectra that correlate well with the spin density wave (SDW) transition at a temperature, TSDW ≈ 186 K. Above TSDW the local tunnel spectra show a small depression in the density of states (DOS) near the Fermi energy (EF). The gap becomes more pronounced upon entering the SDW state with a gap value ∼90 meV at 15 K. However, the zero bias conductance remains finite down to 15 K indicating a finite DOS at the EF in the SDW phase. Furthermore, no noticeable change is observed in the DOS at the antiferromagnetic ordering transition of Eu(2+) moments at 19 K.

Tunnelling in Soft Soil : Tunnel Boring Machine Operation and Soil Response

NARCIS (Netherlands)

Festa, D.; Broere, W.; Bosch, J.W.

2013-01-01

Constructing tunnels in soft soil with the use of Tunnel Boring Machines may induce settlements including soil movements ahead of the face, soil relaxation into the tail void, possible heave due to grouting, long lasting consolidation processes, and potentially several other mechanisms. A

Seismic prediction ahead of tunnel constructions

Science.gov (United States)

Jetschny, S.; Bohlen, T.; Nil, D. D.; Giese, R.

2007-12-01

To increase safety and efficiency of tunnel constructions, online seismic exploration ahead of a tunnel can become a valuable tool. Within the \\it OnSite project founded by the BMBF (German Ministry of Education and Research) within \\it GeoTechnologien a new forward looking seismic imaging technique is developed to e.g. determine weak and water bearing zones ahead of the constructions. Our approach is based on the excitation and registration of \\it tunnel surface waves. These waves are excited at the tunnel face behind the cutter head of a tunnel boring machine and travel into drilling direction. Arriving at the front face they generate body waves (mainly S-waves) propagating further ahead. Reflected S-waves are back- converted into tunnel surface waves. For a theoretical description of the conversion process and for finding optimal acquisition geometries it is of importance to study the propagation characteristics of tunnel surface waves. 3D seismic finite difference modeling and analytic solutions of the wave equation in cylindric coordinates revealed that at higher frequencies, i.e. if the tunnel diameter is significantly larger than the wavelength of S-waves, these surface waves can be regarded as Rayleigh-waves circulating the tunnel. For smaller frequencies, i.e. when the S-wavelength approaches the tunnel diameter, the propagation characteristics of these surface waves are then similar to S- waves. Field measurements performed by the GeoForschungsZentrum Potsdam, Germany at the Gotthard Base Tunnel (Switzerland) show both effects, i.e. the propagation of Rayleigh- and body-wave like waves along the tunnel. To enhance our understanding of the excitation and propagation characteristics of tunnel surface waves the transition of Rayleigh to tube-waves waves is investigated both analytically and by numerical simulations.

Gap anisotropy and tunneling currents. [MPS3

DEFF Research Database (Denmark)

Lazarides, N.; Sørensen, Mads Peter

1996-01-01

The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

Magnetic Fluxtube Tunneling

Science.gov (United States)

Dahlburg, Russell B.; Antiochos,, Spiro K.; Norton, D.

1996-01-01

We present numerical simulations of the collision and subsequent interaction of two initially orthogonal, twisted, force free field magnetic fluxtubes. The simulations were carried out using a new three dimensional explicit parallelized Fourier collocation algorithm for solving the viscoresistive equations of compressible magnetohydrodynamics. It is found that, under a wide range of conditions, the fluxtubes can 'tunnel' through each other. Two key conditions must be satisfied for tunneling to occur: the magnetic field must be highly twisted with a field line pitch much greater than 1, and the magnetic Lundquist number must be somewhat large, greater than or equal to 2880. This tunneling behavior has not been seen previously in studies of either vortex tube or magnetic fluxtube interactions. An examination of magnetic field lines shows that tunneling is due to a double reconnection mechanism. Initially orthogonal field lines reconnect at two specific locations, exchange interacting sections and 'pass' through each other. The implications of these results for solar and space plasmas are discussed.

Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

International Nuclear Information System (INIS)

Chin, S.-C.; Chang, Y.-C.; Chang, C.-S.; Tsong, T T; Hsu, Chen-Chih; Wu, Chih-I; Lin, W-H; Woon, W-Y; Lin, L-T; Tao, H-J

2008-01-01

A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors

Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

International Nuclear Information System (INIS)

Redinger, Alex

2009-01-01

Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between θ = 78.5 and θ = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For θ = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount of material as a

Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Redinger, Alex

2009-07-10

Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between {theta} = 78.5 and {theta} = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For {theta} = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

Science.gov (United States)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

Scanning Tunneling Microscopy

Science.gov (United States)

1992-03-17

co::l!llon semic.ondu.:tors cnn be understood in te: tr.~s of Fenni -level pinning by various sur!~ce · (k:ep· levels associat":d with run:i ve...36]. 5𔃾.3. Schottky-barrier heights. 5𔃾.3.1. Ba.rdeen’s model of Fenni ~level pinning. Ill 19Ji JhnDEEX [40] propose<l that the Schottky barrit

Selective deuteration illuminates the importance of tunneling in the unimolecular decay of Criegee intermediates to hydroxyl radical products.

Science.gov (United States)

Green, Amy M; Barber, Victoria P; Fang, Yi; Klippenstein, Stephen J; Lester, Marsha I

2017-11-21

Ozonolysis of alkenes, an important nonphotolytic source of hydroxyl (OH) radicals in the atmosphere, proceeds through unimolecular decay of Criegee intermediates. Here, we report a large kinetic isotope effect associated with the rate-limiting hydrogen-transfer step that releases OH radicals for a prototypical Criegee intermediate, CH 3 CHOO. IR excitation of selectively deuterated syn -CD 3 CHOO is shown to result in deuterium atom transfer and release OD radical products. Vibrational activation of syn -CD 3 CHOO is coupled with direct time-resolved detection of OD products to measure a 10-fold slower rate of unimolecular decay upon deuteration in the vicinity of the transition state barrier, which is confirmed by microcanonical statistical theory that incorporates quantum mechanical tunneling. The corresponding kinetic isotope effect of ∼10 is attributed primarily to the decreased probability of D-atom vs. H-atom transfer arising from tunneling. Master equation modeling is utilized to compute the thermal unimolecular decay rates for selectively and fully deuterated syn methyl-substituted Criegee intermediates under atmospheric conditions. At 298 K (1 atm), tunneling is predicted to enhance the thermal decay rate of syn -CH 3 CHOO compared with the deuterated species, giving rise to a significant kinetic isotope effect of ∼50.

Lowest order in inelastic tunneling approximation : efficient scheme for simulation of inelastic electron tunneling data

NARCIS (Netherlands)

Rossen, E.T.R.; Flipse, C.F.J.; Cerda, J.I.

2013-01-01

We have developed an efficient and accurate formalism which allows the simulation at the ab initio level of inelastic electron tunneling spectroscopy data under a scanning tunneling microscope setup. It exploits fully the tunneling regime by carrying out the structural optimization and vibrational

Scanning tunneling microscopic images and scanning tunneling spectra for coupled rectangular quantum corrals

International Nuclear Information System (INIS)

Mitsuoka, Shigenori; Tamura, Akira

2011-01-01

Assuming that an electron confined by double δ-function barriers lies in a quasi-stationary state, we derived eigenstates and eigenenergies of the electron. Such an electron has a complex eigenenergy, and the imaginary part naturally leads to the lifetime of the electron associated with tunneling through barriers. We applied this point of view to the electron confined in a rectangular quantum corral (QC) on a noble metal surface, and obtained scanning tunneling microscopic images and a scanning tunneling spectrum consistent with experimental ones. We investigated the electron states confined in coupled QCs and obtained the coupled states constructed with bonding and anti-bonding states. Using those energy levels and wavefunctions we specified scanning tunneling microscope (STM) images and scanning tunneling spectra (STS) for the doubly and triply coupled QCs. In addition we pointed out the feature of resonant electron states associated with the same QCs at both ends of the triply coupled QCs.

Ivar Giaever, Tunneling, and Superconductors

Science.gov (United States)

dropdown arrow Site Map A-Z Index Menu Synopsis Ivar Giaever, Tunneling, and Superconductors Resources with in Superconductors Measured by Electron Tunneling; Physical Review Letters, Vol. 5 Issue 4: 147 - 148 ; August 15, 1960 Electron Tunneling Between Two Superconductors; Physical Review Letters, Vol. 5 Issue 10

Physics of optimal resonant tunneling

NARCIS (Netherlands)

Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.

1997-01-01

The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric

Development of Tuning Fork Based Probes for Atomic Force Microscopy

Science.gov (United States)

Jalilian, Romaneh; Yazdanpanah, Mehdi M.; Torrez, Neil; Alizadeh, Amirali; Askari, Davood

2014-03-01

This article reports on the development of tuning fork-based AFM/STM probes in NaugaNeedles LLC for use in atomic force microscopy. These probes can be mounted on different carriers per customers' request. (e.g., RHK carrier, Omicron carrier, and tuning fork on a Sapphire disk). We are able to design and engineer tuning forks on any type of carrier used in the market. We can attach three types of tips on the edge of a tuning fork prong (i.e., growing Ag2Ga nanoneedles at any arbitrary angle, cantilever of AFM tip, and tungsten wire) with lengths from 100-500 μm. The nanoneedle is located vertical to the fork. Using a suitable insulation and metallic coating, we can make QPlus sensors that can detect tunneling current during the AFM scan. To make Qplus sensors, the entire quartz fork will be coated with an insulating material, before attaching the nanoneedle. Then, the top edge of one prong is coated with a thin layer of conductive metal and the nanoneedle is attached to the fork end of the metal coated prong. The metal coating provides electrical connection to the tip for tunneling current readout and to the electrodes and used to read the QPlus current. Since the amount of mass added to the fork is minimal, the resonance frequency spectrum does not change and still remains around 32.6 KHz and the Q factor is around 1,200 in ambient condition. These probes can enhance the performance of tuning fork based atomic microscopy.

A low-temperature scanning tunneling microscope capable of microscopy and spectroscopy in a Bitter magnet at up to 34 T.

Science.gov (United States)

Tao, W; Singh, S; Rossi, L; Gerritsen, J W; Hendriksen, B L M; Khajetoorians, A A; Christianen, P C M; Maan, J C; Zeitler, U; Bryant, B

2017-09-01

We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and a vibration damping system are required. The STM scan head is designed to be as compact and rigid as possible, to minimize the effect of vibrational noise as well as fit the size constraints of the Bitter magnet. The STM uses a differential screw mechanism for coarse tip-sample approach, and operates in helium exchange gas at cryogenic temperatures. The reliability and performance of the STM are demonstrated through topographic imaging and scanning tunneling spectroscopy on highly oriented pyrolytic graphite at T = 4.2 K and in magnetic fields up to 34 T.

Submucosal tunneling techniques: current perspectives.

Science.gov (United States)

Kobara, Hideki; Mori, Hirohito; Rafiq, Kazi; Fujihara, Shintaro; Nishiyama, Noriko; Ayaki, Maki; Yachida, Tatsuo; Matsunaga, Tae; Tani, Johji; Miyoshi, Hisaaki; Yoneyama, Hirohito; Morishita, Asahiro; Oryu, Makoto; Iwama, Hisakazu; Masaki, Tsutomu

2014-01-01

Advances in endoscopic submucosal dissection include a submucosal tunneling technique, involving the introduction of tunnels into the submucosa. These tunnels permit safer offset entry into the peritoneal cavity for natural orifice transluminal endoscopic surgery. Technical advantages include the visual identification of the layers of the gut, blood vessels, and subepithelial tumors. The creation of a mucosal flap that minimizes air and fluid leakage into the extraluminal cavity can enhance the safety and efficacy of surgery. This submucosal tunneling technique was adapted for esophageal myotomy, culminating in its application to patients with achalasia. This method, known as per oral endoscopic myotomy, has opened up the new discipline of submucosal endoscopic surgery. Other clinical applications of the submucosal tunneling technique include its use in the removal of gastrointestinal subepithelial tumors and endomicroscopy for the diagnosis of functional and motility disorders. This review suggests that the submucosal tunneling technique, involving a mucosal safety flap, can have potential values for future endoscopic developments.

The comparison between limited open carpal tunnel release using direct vision and tunneling technique and standard open carpal tunnel release: a randomized controlled trial study.

Science.gov (United States)

Suppaphol, Sorasak; Worathanarat, Patarawan; Kawinwongkovit, Viroj; Pittayawutwinit, Preecha

2012-04-01

To compare the operative outcome of carpal tunnel release between limited open carpal tunnel release using direct vision and tunneling technique (group A) with standard open carpal tunnel release (group B). Twenty-eight patients were enrolled in the present study. A single blind randomized control trial study was conducted to compare the postoperative results between group A and B. The study parameters were Levine's symptom severity and functional score, grip and pinch strength, and average two-point discrimination. The postoperative results between two groups were comparable with no statistical significance. Only grip strength at three months follow up was significantly greater in group A than in group B. The limited open carpal tunnel release in the present study is effective comparable to the standard open carpal tunnel release. The others advantage of this technique are better cosmesis and improvement in grip strength at the three months postoperative period.

Does flexible tunnel drilling affect the femoral tunnel angle measurement after anterior cruciate ligament reconstruction?

Science.gov (United States)

Muller, Bart; Hofbauer, Marcus; Atte, Akere; van Dijk, C Niek; Fu, Freddie H

2015-12-01

To quantify the mean difference in femoral tunnel angle (FTA) as measured on knee radiographs between rigid and flexible tunnel drilling after anatomic anterior cruciate ligament (ACL) reconstruction. Fifty consecutive patients that underwent primary anatomic ACL reconstruction with a single femoral tunnel drilled with a flexible reamer were included in this study. The control group was comprised of 50 patients all of who underwent primary anatomic ACL reconstruction with a single femoral tunnel drilled with a rigid reamer. All femoral tunnels were drilled through a medial portal to ensure anatomic tunnel placement. The FTA was determined from post-operative anterior-to-posterior (AP) radiographs by two independent observers. A 5° difference between the two mean FTA was considered clinically significant. The average FTA, when drilled with a rigid reamer, was 42.0° ± 7.2°. Drilling with a flexible reamer resulted in a mean FTA of 44.7° ± 7.0°. The mean difference of 2.7° was not statistically significant. The intraclass correlation coefficient for inter-tester reliability was 0.895. The FTA can be reliably determined from post-operative AP radiographs and provides a useful and reproducible metric for characterizing femoral tunnel position after both rigid and flexible femoral tunnel drilling. This has implications for post-operative evaluation and preoperative treatment planning for ACL revision surgery. IV.

Derivation of the tunnelling exchange time for the model of trap-assisted tunnelling

International Nuclear Information System (INIS)

Racko, J.; Ballo, P.; Benko, P.; Harmatha, L.; Grmanova, A.; Breza, J.

2014-01-01

We present derivation of the tunnelling exchange times that play the key role in the model of trap assisted tunnelling (TAT) considering the electron and hole exchange processes between the trapping centre lying in the forbidden band of the semiconductor and the conduction band, valence band or a metal. All exchange processes are quantitatively described by respective exchange times. The reciprocal values of these exchange times represent the frequency with which the exchange processes contribute to the probability of occupation of the trap by free charge carriers. The crucial problem in any model of TAT is the calculation of the occupation probability. In our approach this probability is expressed in terms of only thermal and tunnelling exchange times. The concept of tunnelling exchange times presents a dominant contribution to our model of TAT. The new approach allows to simply calculate the probability of occupation of the trapping centre by a free charge carrier and subsequently to get the thermal and tunnelling generation-recombination rates occurring in the continuity equations. This is why the TAT model based on thermal and tunnelling exchange times is suitable for simulating the electrical properties of semiconductor nanostructures in which quantum mechanical phenomena play a key role. (authors)

Secondary isotope effects and tunneling in elimination reaction of quaternary ammonium salts

International Nuclear Information System (INIS)

Lin, S.

1993-01-01

In order to gain more experimental evidence of the tunneling effect on the non-transferred isotopically-substituted hydrogen in the rate determining step and to investigate in more detail concerning the variable nature of the E2 transition state, tritium tracer-labeled β- and/or α-phenyl substituted ethyltrimethylammonium ions in the elimination reaction and their 2,2-d 2 analogues were studied. The three different substrates are 2-(p-trifluoromethylphenyl)ethyltrimethylammonium bromide (I), 1-phenylethyltrimethylammonium bromide (II) and 1-phenyl- 2-p-chlorophenylethyltrimethylammonium bromide (III). The reactions were found to proceed via a concerted E2 process. The proton is more than one-half transferred to the base at the transition state, especially for case I and III. There is more C beta -H and less C alpha -N bond rupture at the transition state when an electron-withdrawing group is introduced on the β-phenyl ring, i.e., more carbonion character in the transition state. The secondary tritium isotope effects were measured and they were found larger than the maximum value. (1.17) for rehybridization. It was found that these values were strongly temperature dependent. They increase as the temperature goes down. The Arrenhius pre-exponential factors were below unity and the exponential factor to convert the isotope effect of D/T to H/T were much greater than predicted for zero-point energy effects alone (3.26). Tunneling turns to be the only plausible explanation. By reviewing this evidence, one may conclude that the contribution of tunneling is indeed a common occurrence in proton transfer processes. For elimination of compound I, the tunneling effect is greatest while it is less for the other two, which are about the same, but the nature of their transition states is quite different. The variable nature of the transition states for the three eliminations are discussed in terms of the More O'Ferral-Jencks diagram

Electronic noise of superconducting tunnel junction detectors

International Nuclear Information System (INIS)

Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

1994-01-01

The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

Tunneling of Atoms, Nuclei and Molecules

International Nuclear Information System (INIS)

Bertulani, C.A.

2015-01-01

This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different barriers seen by subsystems, damping of resonant tunneling by level bunching and continuum effects due to particle dissociation. (author)

Chaos regularization of quantum tunneling rates

International Nuclear Information System (INIS)

Pecora, Louis M.; Wu Dongho; Lee, Hoshik; Antonsen, Thomas; Lee, Ming-Jer; Ott, Edward

2011-01-01

Quantum tunneling rates through a barrier separating two-dimensional, symmetric, double-well potentials are shown to depend on the classical dynamics of the billiard trajectories in each well and, hence, on the shape of the wells. For shapes that lead to regular (integrable) classical dynamics the tunneling rates fluctuate greatly with eigenenergies of the states sometimes by over two orders of magnitude. Contrarily, shapes that lead to completely chaotic trajectories lead to tunneling rates whose fluctuations are greatly reduced, a phenomenon we call regularization of tunneling rates. We show that a random-plane-wave theory of tunneling accounts for the mean tunneling rates and the small fluctuation variances for the chaotic systems.

Excavation of the Surikamigawa dam diversion tunnel. Surikamigawa dam karihaisui tunnel kantsu

Energy Technology Data Exchange (ETDEWEB)

Ikeda, T.; Konno, T. (Ministry of Construction, Tokyo (Japan))

1994-04-01

A bypass tunnel construction has been completed at the Surikamigawa dam (Japan). This paper describes the summary of the construction. The full-swing dam construction work is scheduled to begin in 1995. The soils distributed near the dam site consist of lapillus tuff containing andesite-based light stones and tuff-based conglomerates containing large gravels. Excavation of the dam diversion tunnel has used a blasting method, and the tunnel construction has adopted an automatic tunnel cross section marking system and a non-electric explosion method. This marking system is a system to irradiate a laser beam onto the facing to depict excavation lines that realizes labor saving and high-accuracy excavation. The error at the tunnel completion was found 20 mm. The non-electric explosion method ignites a coated explosive layer with an impact wave, which is electrostatically safe, and reduces blasting vibration. Electric detonators have also been used because of using ANFO explosives. The result obtained from measurements of inner space displacement necessary for the blasting process has indicated that the area near the dam site consists of stable mountains. 6 figs., 4 tabs.

Charge Islands Through Tunneling

Science.gov (United States)

Robinson, Daryl C.

2002-01-01

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

Tunneling progress on the Yucca Mountain Project

International Nuclear Information System (INIS)

Hansmire, W.H.; Munzer, R.J.

1996-01-01

The current status of tunneling progress on the Yucca Mountain Project (YMP) is presented in this paper. The Exploratory Studies Facility (ESF), a key part of the YMP, has been long in development and construction is ongoing. This is a progress report on the tunneling aspects of the ESF as of January 1, 1996. For purposes of discussion in this summary, the tunneling has progressed in four general phases. The paper describes: tunneling in jointed rock under low stress; tunneling through the Bow Ridge Fault and soft rock; tunneling through the Imbricate Fault Zone; and Tunneling into the candidate repository formation

The development of synchrotron-assisted scanning probe microscopy at NSRRC

International Nuclear Information System (INIS)

Chan, Yuet-Loy; Lu, Dah-An; Hsu, Yao-Jane; Wei, D H; Liang, Xihui; Luo, Meng-Fan; Wu, Tsung-Hsuan

2013-01-01

Synchrotron-based X-ray microspectroscopy is a technique that brings together microscopy and X-ray spectroscopy. It can be considered as an experimental approach capable of extracting X-ray spectrum from a finite area, or an alternative way of constructing images with spectroscopic contrast. The goal of this project is to integrate the functions of scanning tunnelling electron microscope (STM) with near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Here, we describe our experimental setup, followed by recent results that demonstrate the feasibility of acquiring NEXAFS spectrum with a SiO 2 coated STM tip

Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Science.gov (United States)

2013-01-01

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques. PMID:24059470

Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

Science.gov (United States)

Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

2013-11-13

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

Peak stresses shift from femoral tunnel aperture to tibial tunnel aperture in lateral tibial tunnel ACL reconstructions: a 3D graft-bending angle measurement and finite-element analysis.

Science.gov (United States)

Van Der Bracht, Hans; Tampere, Thomas; Beekman, Pieter; Schepens, Alexander; Devriendt, Wouter; Verdonk, Peter; Victor, Jan

2018-02-01

To investigate the effect of tibial tunnel orientation on graft-bending angle and stress distribution in the ACL graft. Eight cadaveric knees were scanned in extension, 45°, 90°, and full flexion. 3D reconstructions with anatomically placed anterior cruciate ligament (ACL) grafts were constructed with Mimics 14.12 ® . 3D graft-bending angles were measured for classic medial tibial tunnels (MTT) and lateral tibial tunnels (LTT) with different drill-guide angles (DGA) (45°, 55°, 65°, and 75°). A pivot shift was performed on 1 knee in a finite-element analysis. The peak stresses in the graft were calculated for eight different tibial tunnel orientations. In a classic anatomical ACL repair, the largest graft-bending angle and peak stresses are seen at the femoral tunnel aperture. The use of a different DGA at the tibial side does not change the graft-bending angle at the femoral side or magnitude of peak stresses significantly. When using LTT, the largest graft-bending angles and peak stresses are seen at the tibial tunnel aperture. In a classic anatomical ACL repair, peak stresses in the ACL graft are found at the femoral tunnel aperture. When an LTT is used, peak stresses are similar compared to classic ACL repairs, but the location of the peak stress will shift from the femoral tunnel aperture towards the tibial tunnel aperture. the risk of graft rupture is similar for both MTTs and LTTs, but the location of graft rupture changes from the femoral tunnel aperture towards the tibial tunnel aperture, respectively. I.

Hypersonic Tunnel Facility (HTF)

Data.gov (United States)

Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

Confocal laser scanning microscopy in study of bone calcification

Science.gov (United States)

Nishikawa, Tetsunari; Kokubu, Mayu; Kato, Hirohito; Imai, Koichi; Tanaka, Akio

2012-12-01

Bone regeneration in mandible and maxillae after extraction of teeth or tumor resection and the use of rough surface implants in bone induction must be investigated to elucidate the mechanism of calcification. The calcified tissues are subjected to chemical decalcification or physical grinding to observe their microscopic features with light microscopy and transmission electron microscopy where the microscopic tissue morphology is significantly altered. We investigated the usefulness of confocal laser scanning microscopy (CLSM) for this purpose. After staggering the time of administration of calcein and alizarin red to experimental rats and dogs, rat alveolar bone and dog femur grafted with coral as scaffold or dental implants were observed with CLSM. In rat alveolar bone, the calcification of newly-formed bone and net-like canaliculi was observed at the mesial bone from the roots progressed at the rate of 15 μm/day. In dog femur grafted with coral, newly-formed bones along the space of coral were observed in an orderly manner. In dog femur with dental implants, after 8 weeks, newly-formed bone proceeded along the rough surface of the implants. CLSM produced high-magnification images of newly-formed bone and thin sections were not needed.

Klein tunneling phenomenon with pair creation process

Science.gov (United States)

Wu, G. Z.; Zhou, C. T.; Fu, L. B.

2018-01-01

In this paper, we study the Klein tunneling phenomenon with electron-positron pair creation process. Pairs can be created from the vacuum by a supercritical single-well potential (for electrons). In the time region, the time-dependent growth pattern of the created pairs can be characterized by four distinct regimes which can be considered as four different statuses of the single well. We find that if positrons penetrate the single well by Klein tunneling in different statuses, the total number of the tunneling positrons will be different. If Klein tunneling begins at the initial stage of the first status i.e. when the sing well is empty, the tunneling process and the total number of tunneling positrons are similar to the traditional Klein tunneling case without considering the pair creation process. As the tunneling begins later, the total tunneling positron number increases. The number will finally settle to an asymptotic value when the tunneling begins later than the settling-down time t s of the single well which has been defined in this paper.

Tunneling time, what is its meaning?

International Nuclear Information System (INIS)

McDonald, C R; Orlando, G; Vampa, G; Brabec, T

2015-01-01

The tunnel time ionization dynamics for bound systems in laser fields are investigated. Numerical analysis for a step function switch-on of the field allows for the tunnel time to be defined as the time it takes the ground state to develop the under-barrier wavefunction components necessary to achieve the static field ionization rate. A relation between the tunnel time and the Keldysh time is established. The definition of the tunnel time is extended to time varying fields and experimental possibilities for measuring the tunnel time are discussed

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

Science.gov (United States)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Transonic Dynamics Tunnel (TDT)

Data.gov (United States)

Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs

OpenAIRE

Hakim, MMA; Haque, A

2002-01-01

We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relative error in gate current due to neglecting carrier tunneling is higher at higher gate voltages and increases...

Revealing energy level structure of individual quantum dots by tunneling rate measured by single-electron sensitive electrostatic force spectroscopy.

Science.gov (United States)

Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter

2015-04-08

We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.

Molecular-scale noncontact atomic force microscopy contrasts in topography and energy dissipation on c(4x2) superlattice structures of alkanethiol self-assembled monolayers

OpenAIRE

Fukuma, Takeshi; Ichii, Takashi; Kobayashi, Kei; Yamada, Hirofumi; Matsushige, Kazumi

2004-01-01

Alkanethiol self-assembledmonolayers formed on Au(111) surfaces were investigated by noncontact atomic force microscopy (NC-AFM). Dodecanethiol monolayers prepared at 78 °C were imaged by NC-AFM, which revealed that the film is composed predominantly of two different phases of c(4×2)superlattice structures. The obtained molecular-scale NC-AFM contrasts are discussed in comparison with previously reported scanning tunneling microscopy images. We found that the energy dissipation image exhibits...

Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100) surface investigated by scanning tunneling microscopy and low energy electron diffraction.

Science.gov (United States)

Gärtner, Stefan; Fiedler, Benjamin; Bauer, Oliver; Marele, Antonela; Sokolowski, Moritz M

2014-01-01

We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA) on the clean and on the oxygen pre-covered Cu(100) surface [referred to as (√2 × 2√2)R45° - 2O/Cu(100)] by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Our results confirm the (4√2 × 5√2)R45° superstructure of PTCDA/Cu(100) reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770-11779]. However, contrary to Schmidt et al., we have no indication for a dissociation of the PTCDA upon adsorption, and we propose a detailed structure model with two intact PTCDA molecules within the unit cell. Domains of high lateral order are obtained, if the deposition is performed at 400 K. For deposition at room temperature, a significant density of nucleation defects is found pointing to a strong interaction of PTCDA with Cu(100). Quite differently, after preadsorption of oxygen and formation of the (√2 × 2√2)R45° - 2O/Cu(100) superstructure on Cu(100), PTCDA forms an incommensurate monolayer with a structure that corresponds well to that of PTCDA bulk lattice planes.

Lateral ordering of PTCDA on the clean and the oxygen pre-covered Cu(100 surface investigated by scanning tunneling microscopy and low energy electron diffraction

Directory of Open Access Journals (Sweden)

Stefan Gärtner

2014-09-01

Full Text Available We have investigated the adsorption of perylene-3,4,9,10-tetracarboxylic acid dianhydride (PTCDA on the clean and on the oxygen pre-covered Cu(100 surface [referred to as (√2 × 2√2R45° – 2O/Cu(100] by scanning tunneling microscopy (STM and low energy electron diffraction (LEED. Our results confirm the (4√2 × 5√2R45° superstructure of PTCDA/Cu(100 reported by A. Schmidt et al. [J. Phys. Chem. 1995, 99,11770–11779]. However, contrary to Schmidt et al., we have no indication for a dissociation of the PTCDA upon adsorption, and we propose a detailed structure model with two intact PTCDA molecules within the unit cell. Domains of high lateral order are obtained, if the deposition is performed at 400 K. For deposition at room temperature, a significant density of nucleation defects is found pointing to a strong interaction of PTCDA with Cu(100. Quite differently, after preadsorption of oxygen and formation of the (√2 × 2√2R45° – 2O/Cu(100 superstructure on Cu(100, PTCDA forms an incommensurate monolayer with a structure that corresponds well to that of PTCDA bulk lattice planes.

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Sin; Clavel, Michael B.; Hudait, Mantu K., E-mail: mantu.hudait@vt.edu [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Pandey, Rahul [Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Datta, Suman [Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Meeker, Michael; Khodaparast, Giti A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2016-06-28

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

Road and Railroad Tunnels

Data.gov (United States)

Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

PUREX Storage Tunnels dangerous waste permit application

International Nuclear Information System (INIS)

1991-12-01

The PUREX Storage Tunnels are a mixed waste storage unit consisting of two underground railroad tunnels: Tunnel Number 1 designated 218-E-14 and Tunnel Number 2 designated 218-E-15. The two tunnels are connected by rail to the PUREX Plant and combine to provide storage space for 48 railroad cars (railcars). The PUREX Storage Tunnels provide a long-term storage location for equipment removed from the PUREX Plant. Transfers into the PUREX Storage Tunnels are made on an as-needed basis. Radioactively contaminated equipment is loaded on railcars and remotely transferred by rail into the PUREX Storage Tunnels. Railcars act as both a transport means and a storage platform for equipment placed into the tunnels. This report consists of part A and part B. Part A reports on amounts and locations of the mixed water. Part B permit application consists of the following: Facility Description and General Provisions; Waste Characteristics; Process Information; Groundwater Monitoring; Procedures to Prevent Hazards; Contingency Plan; Personnel Training; Exposure Information Report

Dry transfer of chemical-vapor-deposition-grown graphene onto liquid-sensitive surfaces for tunnel junction applications

International Nuclear Information System (INIS)

Feng, Ying; Chen, Ke

2015-01-01

We report a dry transfer method that can tranfer chemical vapor deposition (CVD) grown graphene onto liquid-sensitive surfaces. The graphene grown on copper (Cu) foil substrate was first transferred onto a freestanding 4 μm thick sputtered Cu film using the conventional wet transfer process, followed by a dry transfer process onto the target surface using a polydimethylsiloxane stamp. The dry-transferred graphene has similar properties to traditional wet-transferred graphene, characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and electrical transport measurements. It has a sheet resistance of 1.6 ∼ 3.4 kΩ/□, hole density of (4.1 ∼ 5.3) × 10 12 cm −2 , and hole mobility of 460 ∼ 760 cm 2 V −1 s −1 without doping at room temperature. The results suggest that large-scale CVD-grown graphene can be transferred with good quality and without contaminating the target surface by any liquid. Mg/MgO/graphene tunnel junctions were fabricated using this transfer method. The junctions show good tunneling characteristics, which demonstrates the transfer technique can also be used to fabricate graphene devices on liquid-sensitive surfaces. (paper)

Superresolution upgrade for confocal spinning disk systems using image scanning microscopy (Conference Presentation)

Science.gov (United States)

Isbaner, Sebastian; Hähnel, Dirk; Gregor, Ingo; Enderlein, Jörg

2017-02-01

Confocal Spinning Disk Systems are widely used for 3D cell imaging because they offer the advantage of optical sectioning at high framerates and are easy to use. However, as in confocal microscopy, the imaging resolution is diffraction limited, which can be theoretically improved by a factor of 2 using the principle of Image Scanning Microscopy (ISM) [1]. ISM with a Confocal Spinning Disk setup (CSDISM) has been shown to improve contrast as well as lateral resolution (FWHM) from 201 +/- 20 nm to 130 +/- 10 nm at 488 nm excitation. A minimum total acquisition time of one second per ISM image makes this method highly suitable for 3D live cell imaging [2]. Here, we present a multicolor implementation of CSDISM for the popular Micro-Manager Open Source Microscopy platform. Since changes in the optical path are not necessary, this will allow any researcher to easily upgrade their standard Confocal Spinning Disk system at remarkable low cost ( 5000 USD) with an ISM superresolution option. [1]. Müller, C.B. and Enderlein, J. Image Scanning Microscopy. Physical Review Letters 104, (2010). [2]. Schulz, O. et al. Resolution doubling in fluorescence microscopy with confocal spinning-disk image scanning microscopy. Proceedings of the National Academy of Sciences of the United States of America 110, 21000-5 (2013).

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

Science.gov (United States)

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Scanning tunneling microscope nanoetching method

Science.gov (United States)

Li, Yun-Zhong; Reifenberger, Ronald G.; Andres, Ronald P.

1990-01-01

A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.

Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

Dirac particle tunneling from black rings

International Nuclear Information System (INIS)

Jiang Qingquan

2008-01-01

Recent research shows that Hawking radiation can be treated as a quantum tunneling process, and Hawking temperatures of Dirac particles across the horizon of a black hole can be correctly recovered via the fermion tunneling method. In this paper, motivated by the fermion tunneling method, we attempt to apply the analysis to derive Hawking radiation of Dirac particles via tunneling from black ring solutions of 5-dimensional Einstein-Maxwell-dilaton gravity theory. Finally, it is interesting to find that, as in the black hole case, fermion tunneling can also result in correct Hawking temperatures for the rotating neutral, dipole, and charged black rings.

Engineers win award for Swiss tunnel

CERN Multimedia

2003-01-01

A Derby engineering consultancy has won the Tunnelling Industry Award 2003 for Excellence in Tunnel Design, offered by the British Tunnelling Society, for its work on the LHC in Geneva, Switzerland (1/2 page).

Semiclassical description of resonant tunneling

International Nuclear Information System (INIS)

Bogomolny, E.B.; Rouben, D.C.

1996-01-01

A semiclassical formula is calculated for the tunneling current of electrons trapped in a potential well which can tunnel into and across a wide quantum well. The tunneling current is measured at the second interface of this well and the calculations idealized an experimental situation where a strong magnetic field tilted with respect to an electric field was used. It is shown that the contribution to the tunneling current, due to trajectories which begin at the first interface and end on the second, is dominant for periodic orbits which hit both walls of the quantum well. (author)

A Top Pilot Tunnel Preconditioning Method for the Prevention of Extremely Intense Rockbursts in Deep Tunnels Excavated by TBMs

Science.gov (United States)

Zhang, Chuanqing; Feng, Xiating; Zhou, Hui; Qiu, Shili; Wu, Wenping

2012-05-01

The headrace tunnels at the Jinping II Hydropower Station cross the Jinping Mountain with a maximum overburden depth of 2,525 m, where 80% of the strata along the tunnels consist of marble. A number of extremely intense rockbursts occurred during the excavation of the auxiliary tunnels and the drainage tunnel. In particular, a tunnel boring machine (TBM) was destroyed by an extremely intense rockburst in a 7.2-m-diameter drainage tunnel. Two of the four subsequent 12.4-m-diameter headrace tunnels will be excavated with larger size TBMs, where a high risk of extremely intense rockbursts exists. Herein, a top pilot tunnel preconditioning method is proposed to minimize this risk, in which a drilling and blasting method is first recommended for the top pilot tunnel excavation and support, and then the TBM excavation of the main tunnel is conducted. In order to evaluate the mechanical effectiveness of this method, numerical simulation analyses using the failure approaching index, energy release rate, and excess shear stress indices are carried out. Its construction feasibility is discussed as well. Moreover, a microseismic monitoring technique is used in the experimental tunnel section for the real-time monitoring of the microseismic activities of the rock mass in TBM excavation and for assessing the effect of the top pilot tunnel excavation in reducing the risk of rockbursts. This method is applied to two tunnel sections prone to extremely intense rockbursts and leads to a reduction in the risk of rockbursts in TBM excavation.

Tunneling Ionization of Diatomic Molecules

DEFF Research Database (Denmark)

Svensmark, Jens Søren Sieg

2016-01-01

When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... barriers, an ability classical particles do not possess. Tunnelling is a fundamental quantum mechanical process, a process that is distinctly non-classical, so solving this tunnelling problem is not only relevant for molecular physics, but also for quantum theory in general. In this dissertation the theory...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2012-06-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

2012-01-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.