Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

OpenAIRE

Saffarzadeh, Alireza; Daqiq, Reza

2009-01-01

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

Fabrication and current–voltage characteristics of NiOx/ZnO based MIIM tunnel diode

Energy Technology Data Exchange (ETDEWEB)

Singh, Aparajita, E-mail: asing044@fiu.edu [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, United States of America (United States); Ratnadurai, Rudraskandan [Global Foundaries, Malta, New York 12020 (United States); Kumar, Rajesh [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States); Department of Physics, Panjab University, Chandigarh 160014 (India); Krishnan, Subramanian [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States); Emirov, Yusuf [Advanced Materials Engineering Research Institute, Florida International University, Miami, Florida 33174 (United States); Bhansali, Shekhar [BioMEMS and Microsystems Laboratory, Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States)

2015-04-15

Highlights: • Fabrication of single and bilayer tunnel diodes by sputter deposition. • Current–voltage characteristics study. • Enhanced asymmetry and non-linearity. • Study of tunneling mechanism. - Abstract: Enhanced asymmetric and non-linear characteristics of Ni–NiOx based MIM diode has been reported by the addition of a second insulator layer ZnO to form MIIM configuration. These properties are required for applications like energy-harvesting devices, terahertz electronics, macro electronics, etc. In this work, single insulator layer Ni–NiOx–Cr and double insulator Ni–NiOx–ZnO–Cr tunnel diodes were fabricated and their I–V characteristics were studied. A significant increase by one order of magnitude in asymmetry has been observed in case of bilayer NiOx/ZnO dielectric configuration at low voltages. The sensitivity of the NiOx and NiOx/ZnO dielectric configuration in MIM stack was 11 V{sup −1} and 16 V{sup −1}. The improved performance of the bilayer insulator diode is due to the second insulator which enables resonant tunneling or step-tunneling. Resonant tunneling was found to be dominant through trap assisted tunneling in the NiOx/ZnO diode.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Study and fabrication of tunnel diodes made on germanium using a collective planar technique

International Nuclear Information System (INIS)

Vrahides, Michel

1973-01-01

The main results of the theory on tunnel diodes are presented in the first chapter. From these results are deduced the technological requirements that any fabrication process should meet to make tunnel diodes. These requirements show up that, among the three techniques for junction making (thermal diffusion of impurities, epitaxy, alloying), the last one is presently the best fitted to the fabrication of tunnel junctions. By analyzing the defects created by various alloying technologies presently used, together with a study of the benefits due to a use of chemical photolithography, evaporation under vacuum and masking by deposited oxide, it is possible to design a tentative scheme of a 0.5 ns tunnel diode. Then, in a second chapter, is presented the collective process for fabrication that has been used on monocrystalline, P-type, germanium wafers. 8 000 tunnel diodes may be positioned on a 1.5 inch diameter wafer by using that process. A description of the various apparatus used is also given. The experimental results are described in the third chapter. The influence of the various fabrication parameters on the electrical characteristics of the diodes are discussed. It is shown, by studying the fabrication yields and parameter spreading, that 80 per cent of the diodes exhibit a standard tunnel diode behaviour and that 90 per cent of these present a peak current dispersion less than ± 25 per cent. When measuring at the peak current drifts under temperature stresses, a good analogy with conventional tunnel diode is found. Some measurements of switching times have led to values as low as 0.6 nanoseconds. (author) [fr

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Low-threshold amplitude discriminator circuit with tunnel diode and two transistors in differential connection

International Nuclear Information System (INIS)

Ryba, J.; Volny, J.

1973-01-01

The connection is designed of a low-threshold amplitude discriminator and a tunnel diode with two transistors in differential connection. The discriminator is by its simple connection, its low consumption and high temperature stability suitable especially for portable radiation detectors. The tunnel diode is connected by one pole to a collector clamp and by the other to the supply voltage. A suitable resistor is connected in parallel with the tunnel diode to meet demands for higher sensitivity. (Z.S.)

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

DEFF Research Database (Denmark)

Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

2008-01-01

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

High-Performance Single Nanowire Tunnel Diodes

DEFF Research Database (Denmark)

Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

2010-01-01

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

Spin injection in n-type resonant tunneling diodes.

Science.gov (United States)

Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

2012-10-25

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

International Nuclear Information System (INIS)

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

2016-01-01

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes

DEFF Research Database (Denmark)

Nielsen, Otto M.

1983-01-01

of multistep tunneling recombination current and injected minority carrier diffusion current. This can explain the observed values of the diode quality factor n. The results also show that the voltage drop across the oxide Vox is increased with increased NA, with the result that the lowering of the minority...... carrier diode current Jmin is greater than in the usual theory. The conclusion drawn is that the increase in Vox and lowering of Jmin is due to multistep tunneling of majority carriers through the semiconductor barrier. Journal of Applied Physics is copyrighted by The American Institute of Physics.......Current–voltage characteristics have been examined for Al–SiO2–pSi diodes with an interfacial oxide thickness of delta[approximately-equal-to]20 Å. The diodes were fabricated on and oriented substrates with an impurity concentration in the range of NA=1014–1016 cm−3. The results show that for low...

Tunnel Diode Discriminator with Fixed Dead Time

DEFF Research Database (Denmark)

Diamond, J. M.

1965-01-01

A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

Directory of Open Access Journals (Sweden)

Alex Hayat

2012-12-01

Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory.

Science.gov (United States)

Lee, Hong-Sub; Park, Hyung-Ho

2016-06-22

Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

International Nuclear Information System (INIS)

Dakhlaoui, H; Almansour, S

2016-01-01

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al x Ga (1−x) N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current–voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al x Ga (1−x) N width, and the aluminum concentration x Al . The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current–voltage ( I – V) characteristic strongly depends on aluminum concentration x Al . It is shown that the peak-to-valley ratio (PVR) increases with x Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors. (paper)

Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes

International Nuclear Information System (INIS)

Rivera, P.H.; Schulz, P.A.

1996-01-01

It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs

Universal tunneling behavior in technologically relevant P/N junction diodes

International Nuclear Information System (INIS)

Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

2004-01-01

Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes.

Science.gov (United States)

Lee, Kyeong Won; Jang, Chan Wook; Shin, Dong Hee; Kim, Jong Min; Kang, Soo Seok; Lee, Dae Hun; Kim, Sung; Choi, Suk-Ho; Hwang, Euyheon

2016-07-28

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations.

Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

Energy Technology Data Exchange (ETDEWEB)

Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

2009-11-15

In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

RTDs in Australia: expensive designer drinks or cheap rocket fuel?

Science.gov (United States)

Jones, Sandra C; Barrie, Lance

2011-01-01

The ready-to-drink (RTD) market is growing rapidly, and this product category has been shown to be particularly appealing to young drinkers. The purpose of this study was to identify and describe the range and availability of RTDs available in New South Wales (NSW) (including metropolitan, regional and rural areas), with a particular focus on the variations in alcohol content and pricing. A total of 52 alcohol outlet audits were conducted across nine locations, including metropolitan, regional and rural New South Wales. Trained auditors recorded the RTDs for sale in each outlet, including product characteristics and prices for each product, and overall fridge/store space allocated to RTDs. Across the 52 bottle shops audited, 150 individual RTD alcohol products were identified, ranging from 4.8% to 7.5% alcohol by volume and from 1.0 to 2.7 standard drinks (SD) per unit. When purchased in multipacks (typically four or six units), the cost per SD ranged from $1.95 to $3.70, decreasing to as low as $1.22 per SD when on special. The proliferation of high-strength RTDs and the substantial discounting of multipack purchases means that RTDs can no longer be seen as expensive low-strength sweet-flavoured drinks targeted at female drinkers, but as a broader product category that includes high-strength male-targeted brands. There is a need for further research to examine young people's preferences for these different product types; and consideration of policies, alongside price-based interventions, that address broader marketing strategies. © 2010 Australasian Professional Society on Alcohol and other Drugs.

Voltage-controlled spin selection in a magnetic resonant tunneling diode.

Science.gov (United States)

Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

2003-06-20

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes

International Nuclear Information System (INIS)

Liang Gengchiau; Khalid, Sharjeel Bin; Lam, Kai-Tak

2010-01-01

The edge roughness effects of graphene nanoribbons on their application in resonant tunnelling diodes with different geometrical shapes (S, H and W) were investigated. Sixty samples for each 5%, 10% and 15% edge roughness conditions of these differently shaped graphene nanoribbon resonant tunnelling diodes were randomly generated and studied. Firstly, it was observed that edge roughness in the barrier regions decreases the effective barrier height and thickness, which increases the broadening of the quantized states in the quantum well due to the enhanced penetration of the wave-function tail from the electrodes. Secondly, edge roughness increases the effective width of the quantum well and causes the lowering of the quantized states. Furthermore, the shape effects on carrier transport are modified by edge roughness due to different interfacial scattering. Finally, with the effects mentioned above, edge roughness has a considerable impact on the device performance in terms of varying the peak-current positions and degrading the peak-to-valley current ratio.

RTDS Implementation of Bornholm Power System

DEFF Research Database (Denmark)

Cha, Seung-Tae

2010-01-01

This report is a direct result of special Ph.D course(Distribution System Modeling and Analysis) as part of external stay, RTI, Canada to provide implementation procedures, the capability of the RTDS simulator in the area of distribution modeling, and supporting documentation for future research...

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

International Nuclear Information System (INIS)

Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

2009-01-01

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

Specific features of the behaviour of excess currents in tunnel diodes of n-GaAs

International Nuclear Information System (INIS)

Vyatkin, A.P.; Glushchenko, V.A.; Parkhomenko, R.P.; Pastor, A.P.

1981-01-01

The behaviour of currents in the field of a valley of volt-ampere characteristics (VAC) and the effect of 2.0 MeV electron bombardment on the characteristics of tunnel n-GaAs of TD diodes is considered. Release of tunnel and thermal current components has shown that the first component of excess currents is due to electron tunneling through intermediate states situated in a wide region of the forbidden zone. The nature of the second current component is explained by far reaching into the region of the forbidden zone tails of electron states on which energy impurity states can superimpose. Highly-alloyed TD with concentrations n>=3x10 19 cm -3 and p=(1.5-2)x10 20 cm -3 practically are not sensitive to doses up to phi approximately 2x10 17 el/cm 2 . Radiation induced defects related with electron bombardment is rather small. Specific features of the preparation of n-GaAs tunnel diodes lead to the fact that as a result of complex alloying of the p-region of the diode a relatively slow increase of excess currents as compared with the TD corresponding currents from the p-GaAs is observed

Remote calibration of Resistance Temperature Devices (RTDs): Final report

International Nuclear Information System (INIS)

Blalock, T.V.; Roberts, M.J.

1988-02-01

Johnson noise power measuring techniques have been used to calibrate platinum resistance temperature detectors (RTDs) installed in an operating nuclear plant - Connecticut Yankee Atomic Power Company's Haddam Neck Nuclear Plant - achieving agreement with the dc calibration from better than 0.1% to as much as 1% (0.54 to 9.7 0 F) at the normal operating temperature of 585 0 F. Tests were also conducted at plant shutdown conditions. In this application, RTDs with an ice point resistance of 200 Ω were connected with four-wire extension cables approximately 100-ft long to a test station in containment. Methods were developed for in situ characterization of the extension cables and for quantitative measurement of and correction for nonthermal induced noise. Analysis of dc calibration methods showed that resistance-temperature tables used with industrial PRTs may be in error by 0.2 0 F or 0.02% A (expressed as a percentage of absolute temperature in either Kelvin or degrees Rankine) at 540 0 F. Recalibration of the RTDs measured in the plant tests showed differences of about 2.5 0 F or 0.2% A at 540 0 F from calibration tables used in the plant

Aging characteristics of nuclear plant RTDs and pressure transmitters

International Nuclear Information System (INIS)

Hashemian, H.M.

2004-01-01

Resistance Temperature Detectors (RTDs) and pressure, level, and flow transmitters provide almost all the vital signals that are used for the control and safety of nuclear power plants. Therefore, it is crucial to ensure that the performance of these sensors remain acceptable as they age in the process under normal operating conditions. Four comprehensive research projects were conducted for the U.S. Nuclear Regulatory Commission (NRC) to evaluate the effects of normal aging on calibration stability and response time of RTDs and pressure transmitters of the types used for safety-related measurements in nuclear power plants. Each project was conducted over a three year period. The projects involved laboratory testing of representative RTDs and pressure transmitters aged in simulated reactor conditions. The main purpose of these projects was to establish the degradation rate of the sensors and use the information to determine if the current testing intervals practiced by the nuclear power industry are adequate for management of aging of the sensors. The results have indicated that the current nuclear industry practice of testing the response time and calibration of the sensors once every fuel cycle is adequate. (author)

Communication Test for ‘MatrikonOPC Server for SCADA DNP 3’ with RTDS

DEFF Research Database (Denmark)

Wu, Qiuwei; Cha, Seung-Tae; Saleem, Arshad

2010-01-01

The purpose of the communication test for ‘MatrikonOPC server for SCADA DNP 3’ with RTDS is to verify the data exchange between the ‘MatrikonOPC server for SCADA DNP 3’ and the RTDS using the DNP 3 protocol.The communication test is part of the work for the ‘Wind in Øresund’ project. The objective...... of the ‘Wind in Øresund’ project is to build a demonstration and education system of power system operation and control with a RTDS and a SCADA system....

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

International Nuclear Information System (INIS)

Tang, N.Y.

2009-01-01

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2012-01-01

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Science.gov (United States)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

Science.gov (United States)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Analysis of the resonant tunneling diode with the stepped pre-barrier

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Voves, J.

2009-01-01

Roč. 193, č. 1 (2009), s. 1-4 ISSN 1742-6588. [16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009] R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801 Institutional research plan: CEZ:AV0Z20670512 Keywords : Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering

Research on Parallel Three Phase PWM Converters base on RTDS

Science.gov (United States)

Xia, Yan; Zou, Jianxiao; Li, Kai; Liu, Jingbo; Tian, Jun

2018-01-01

Converters parallel operation can increase capacity of the system, but it may lead to potential zero-sequence circulating current, so the control of circulating current was an important goal in the design of parallel inverters. In this paper, the Real Time Digital Simulator (RTDS) is used to model the converters parallel system in real time and study the circulating current restraining. The equivalent model of two parallel converters and zero-sequence circulating current(ZSCC) were established and analyzed, then a strategy using variable zero vector control was proposed to suppress the circulating current. For two parallel modular converters, hardware-in-the-loop(HIL) study based on RTDS and practical experiment were implemented, results prove that the proposed control strategy is feasible and effective.

Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs

Science.gov (United States)

2011-03-02

power responsivity of LiTaO3 pyroelectric detector with integrated transimpedance amplifier (TIA) using two "spot" measurements at 0.104 THz (InP Gunn... amplifier (SRS-810). (3) Calculation of the noise-equivalent power (NEP) of the pyroelectric detector at 0.104 and 0.53 THz using the results of (1...ultra-low-noise operational amplifier . (8) Measurement of thermal radiation responsivity of ZBD using the same "grey" body as in (4) (9

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

Science.gov (United States)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

Science.gov (United States)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Tunnel diode amplifiers and their background noise as a function of the polarization point, the temperature, and the bandwidth; Amplificateurs a diode tunnel et leur bruit de fond, en fonction du point de polarisation, de la temperature et de la bande passante

Energy Technology Data Exchange (ETDEWEB)

Ozveaminian, K [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

1969-07-01

The author presents mathematical and graphical methods for the study of the stability of tunnel diode circuits. He gives an application to the realization of three amplifiers. Then he describes a theoretical and experimental investigation of the noise of these amplifiers and of its variations with the bias, the temperature and the bandwidth. (author) [French] L'auteur presente deux methodes, l'une theorique l'autre graphique, pour l'etude de la stabilite des circuits a diode tunnel, dont il fait une application a la realisation de trois amplificateurs. Il effectue ensuite une etude theorique et experimentale du bruit de fond de ces amplificateurs, en fonction du point de polarisation, de la temperature et de la bande passante. (auteur)

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

Science.gov (United States)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

Science.gov (United States)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

Science.gov (United States)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes

Directory of Open Access Journals (Sweden)

Yaksh Rawal

2012-01-01

Full Text Available Remotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuable if it is desirable to harvest the ambient energy available in the wide range of electromagnetic spectrum. This has motivated the research for developing energy harvesting devices which can absorb this energy and produce a DC voltage. Rectenna, an antenna coupled with a rectifier, is the main component used for absorbing electromagnetic radiation at GHz and THz frequencies. Rectifying MIM tunnel diodes are able to operate at tens and hundreds of GHz frequency. As the preliminary steps towards development of high-frequency rectifiers, this paper presents fabrication and DC characterization of two new MIM diodes, Ti-TiO2-Al and Ti-TiO2-Pt. G-V analysis of the fabricated diodes verifies tunneling. Brinkman-Dynes-Rowell model is used to extract oxide thickness of which the derived value is around 9 nm. Ti-TiO2-Pt diode exhibits rectification ratio of 15 at 0.495 V, which is more than rectification ratio reported in earlier works.

Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

2017-11-01

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

Highly doped layer for tunnel junctions in solar cells

Science.gov (United States)

Fetzer, Christopher M.

2017-08-01

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

Science.gov (United States)

Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

1991-01-01

InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

Science.gov (United States)

Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

2015-12-01

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Science.gov (United States)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Development of a new time-amplitude converter with tunnel diodes for improving fast neutron spectrometry by time of flight; Realisation d'un nouveau convertisseur temps-amplitude a diodes ''tunnel'' ameliorant la spectrometrie des neutrons rapides par temps de vol

Energy Technology Data Exchange (ETDEWEB)

Van Zurk, R [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

1963-11-15

New time-amplitude converter with Esaki diodes, the events being preselected before analysis, allows for realizing a fast neutron spectrometer by time-of-flight with an 1.5 * 10{sup -9} s overall time resolution for {sup 12}C (n,n') at 14 MeV. (author) [French] Realisation d'un convertisseur temps-amplitude a diodes 'tunnel', avec preselection des impulsions; l'application pour un spectrometre de neutrons rapides a temps-de-vol permet d'obtenir une resolution totale en temps de 1,5 nanoseconde dans la diffusion {sup 12}C (n,n') a 14 MeV. (auteur)

A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

International Nuclear Information System (INIS)

Wang Hongmei; Xu Huaizhe; Zhang Yafei

2006-01-01

Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width

Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

Energy Technology Data Exchange (ETDEWEB)

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F. [National Research Nuclear University “MEPhI” (Russian Federation)

2016-08-15

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the application of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Science.gov (United States)

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

2015-02-01

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.

Extracting random numbers from quantum tunnelling through a single diode.

Science.gov (United States)

Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

2017-12-19

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

Effects of normal aging on calibration and response time of nuclear plant RTDs and pressure sensors

International Nuclear Information System (INIS)

Hashemian, H.L.; Riner, J.L.

1993-01-01

Resistance temperature detectors (RTDs) and pressure, level, and flow transmitters provide a majority of the vital signals for the control and safety of nuclear power plants. Therefore, it is crucial to ensure that the performance of these sensors are maintained at an acceptable level while the plant is operating. Since aging has the potential to cause performance degradation in RTDs and pressure transmitters, several research projects have been sponsored by the US Nuclear Regulatory Commission (NRC) to study the aging characteristics of these sensors and ensure that adequate test methods and test frequencies are followed by the nuclear industry to ensure safety. The details of these projects are summarized in this paper

RTDS implementation of an improved sliding mode based inverter controller for PV system.

Science.gov (United States)

Islam, Gazi; Muyeen, S M; Al-Durra, Ahmed; Hasanien, Hany M

2016-05-01

This paper proposes a novel approach for testing dynamics and control aspects of a large scale photovoltaic (PV) system in real time along with resolving design hindrances of controller parameters using Real Time Digital Simulator (RTDS). In general, the harmonic profile of a fast controller has wide distribution due to the large bandwidth of the controller. The major contribution of this paper is that the proposed control strategy gives an improved voltage harmonic profile and distribute it more around the switching frequency along with fast transient response; filter design, thus, becomes easier. The implementation of a control strategy with high bandwidth in small time steps of Real Time Digital Simulator (RTDS) is not straight forward. This paper shows a good methodology for the practitioners to implement such control scheme in RTDS. As a part of the industrial process, the controller parameters are optimized using particle swarm optimization (PSO) technique to improve the low voltage ride through (LVRT) performance under network disturbance. The response surface methodology (RSM) is well adapted to build analytical models for recovery time (Rt), maximum percentage overshoot (MPOS), settling time (Ts), and steady state error (Ess) of the voltage profile immediate after inverter under disturbance. A systematic approach of controller parameter optimization is detailed. The transient performance of the PSO based optimization method applied to the proposed sliding mode controlled PV inverter is compared with the results from genetic algorithm (GA) based optimization technique. The reported real time implementation challenges and controller optimization procedure are applicable to other control applications in the field of renewable and distributed generation systems. Copyright © 2015 ISA. Published by Elsevier Ltd. All rights reserved.

Research on Experiment of Islanding Protection Device of Grid-connected Photovoltaic System Based on RTDS

Science.gov (United States)

Zhou, Ning; Yang, Jia; Cheng, Zheng; Chen, Bo; Su, Yong Chun; Shu, Zhan; Zou, Jin

2017-06-01

Solar photovoltaic power generation is the power generation using solar cell module converting sunlight into DC electric energy. In the paper an equivalent model of solar photovoltaic power generation system is built in RTDS. The main circuit structure of the two-stage PV grid-connected system consists of the DC-DC, DC-AC circuit. The MPPT (Maximum Power Point Tracking) control of the PV array is controlled by adjusting the duty ratio of the DC-DC circuit. The proposed control strategy of constant voltage/constant reactive power (V/Q) control is successfully implemented grid-connected control of the inverter when grid-connected operation. The closed-loop experiment of islanding protection device of photovoltaic power plant on RTDS, verifies the correctness of the simulation model, and the experimental verification can be applied to this type of device.

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

2011-01-01

peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

Science.gov (United States)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

NARCIS (Netherlands)

Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

2015-01-01

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

Science.gov (United States)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Quantum random number generator based on quantum tunneling effect

OpenAIRE

Zhou, Haihan; Li, Junlin; Pan, Dong; Zhang, Weixing; Long, Guilu

2017-01-01

In this paper, we proposed an experimental implementation of quantum random number generator(QRNG) with inherent randomness of quantum tunneling effect of electrons. We exploited InGaAs/InP diodes, whose valance band and conduction band shared a quasi-constant energy barrier. We applied a bias voltage on the InGaAs/InP avalanche diode, which made the diode works under Geiger mode, and triggered the tunneling events with a periodic pulse. Finally, after data collection and post-processing, our...

Simulation and RTDS Hardware Implementation of SHAF for Mitigation of Current Harmonics with p-q and Id-Iq Control Strategies Using PI Controller

Directory of Open Access Journals (Sweden)

A. K. Panda

2011-06-01

Full Text Available Control strategies for extracting the three-phase reference currents for shunt active power filters are compared, evaluating their performance under different source conditions in MATLAB/Simulink environment and also with Real Time Digital Simulator (RTDS Hardware. When the supply voltages are balanced and sinusoidal, the two control strategies are converging to the same compensation characteristics but when the supply voltages are distorted and/or un-balanced sinusoidal, these control strategies result in different degrees of compensation in harmonics. The p-q control strategy is unable to yield an adequate solution when source voltages are not ideal. Extensive Simulations are carried out with PI controller for both p-q and Id-Iq control strategies for different voltage conditions and adequate results were presented. The 3-ph 4-wire SHAF system is also implemented on RTDS Hardware to further verify its effectiveness. The detailed simulation and RTDS Hardware results are included.

The theory of coherent resonance tunneling of interacting electrons

International Nuclear Information System (INIS)

Elesin, V. F.

2001-01-01

Analytical solutions of the Schrödinger equation for a two-barrier structure (resonance-tunnel diode) with open boundary conditions are found within the model of coherent tunneling of interacting electrons. Simple expressions for resonance current are derived which enable one to analyze the current-voltage characteristics, the conditions of emergence of hysteresis, and singularities of the latter depending on the parameters of resonance-tunnel diode. It is demonstrated that the hysteresis is realized if the current exceeds some critical value proportional to the square of resonance level width.

Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

International Nuclear Information System (INIS)

Chen, Haoran; Yang, Lin'an; Hao, Yue

2014-01-01

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In x Ga 1−x N at around x = 0.06

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2010-01-01

The electronic transport characteristics of an asymmetric triple-barrier resonant tunnelling diode are calculated by the time-dependent Wigner–Poisson method. The intrinsic current oscillations are found in two separate bias voltage ranges. The first one is located below the resonant current peak, and the second lies in the negative differential resistance region. We provide the explanation of the current density oscillations in these two separate bias voltage ranges based on the analysis of the self-consistent potential profiles and changes of electron density. We have shown that two different formation mechanisms are responsible for the current density oscillations in these two bias voltage ranges. In the bias voltage range below the resonant current peak in the current–voltage characteristics, the current density oscillations are caused by the coupling between quasi-bound states in the left and right quantum wells. On the other hand, the current density oscillations in the negative differential resistance region result from the coupling between quasi-bound states in the left quantum well and the quantum well formed in the region of the left contact

Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

Energy Technology Data Exchange (ETDEWEB)

Chen, Haoran; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2014-08-21

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In{sub x}Ga{sub 1−x}N at around x = 0.06.

Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

2017-05-01

We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

Capture dynamics of hot electrons on quantum dots in RTDs studied by noise measurement

International Nuclear Information System (INIS)

Hees, S S; Kardynal, B E; Shields, A J; Farrer, I; Ritchie, D A

2008-01-01

We investigate the noise in quantum dot resonant tunnelling diodes (QDRTDs), where the quantum dots (QDs) placed in the collector experience electric fields that vary in a wide range. The trapping/detrapping of electrons on the QDs dominated the measured electrical noise. The model that we derived for the noise explains the experimental data well. The QD capture cross-section is one to two orders of magnitude smaller than the physical size of the QDs due to the reduced probability of capturing a hot electron on the QD. The model is a powerful tool to design the noise characteristics of QDRTD single photon-detectors

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

KAUST Repository

Hwang, David

2017-12-13

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

KAUST Repository

Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

A Novel Supervisory Control Algorithm to Improve the Performance of a Real-Time PV Power-Hardware-In-Loop Simulator with Non-RTDS

Directory of Open Access Journals (Sweden)

Dae-Jin Kim

2017-10-01

Full Text Available A programmable direct current (DC power supply with Real-time Digital Simulator (RTDS-based photovoltaic (PV Power Hardware-In-the-Loop (PHIL simulators has been used to improve the control algorithm and reliability of a PV inverter. This paper proposes a supervisory control algorithm for a PV PHIL simulator with a non-RTDS device that is an alternative solution to a high-cost PHIL simulator. However, when such a simulator with the conventional algorithm which is used in an RTDS is connected to a PV inverter, the output is in the transient state and it makes it impossible to evaluate the performance of the PV inverter. Therefore, the proposed algorithm controls the voltage and current target values according to constant voltage (CV and constant current (CC modes to overcome the limitation of the Computing Unit and DC power supply, and it also uses a multi-rate system to account for the characteristics of each component of the simulator. A mathematical model of a PV system, programmable DC power supply, isolated DC measurement device, and Computing Unit are integrated to form a real-time processing simulator. Performance tests are carried out with a commercial PV inverter and prove the superiority of this proposed algorithm against the conventional algorithm.

Long-distance pulse propagation on high-frequency dissipative nonlinear transmission lines/resonant tunneling diode line cascaded maps

International Nuclear Information System (INIS)

Klofai, Yerima; Essimbi, B Z; Jaeger, D

2011-01-01

Pulse propagation on high-frequency dissipative nonlinear transmission lines (NLTLs)/resonant tunneling diode line cascaded maps is investigated for long-distance propagation of short pulses. Applying perturbative analysis, we show that the dynamics of each line is reduced to an expanded Korteweg-de Vries-Burgers equation. Moreover, it is found by computer experiments that the soliton developed in NLTLs experiences an exponential amplitude decay on the one hand and an exponential amplitude growth on the other. As a result, the behavior of a pulse in special electrical networks made of concatenated pieces of lines is closely similar to the transmission of information in optical/electrical communication systems.

Long-distance pulse propagation on high-frequency dissipative nonlinear transmission lines/resonant tunneling diode line cascaded maps

Energy Technology Data Exchange (ETDEWEB)

Klofai, Yerima [Department of Physics, Higher Teacher Training College, University of Maroua, PO Box 46 Maroua (Cameroon); Essimbi, B Z [Department of Physics, Faculty of Science, University of Yaounde 1, PO Box 812 Yaounde (Cameroon); Jaeger, D, E-mail: bessimb@yahoo.fr [ZHO, Optoelectronik, Universitaet Duisburg-Essen, D-47048 Duisburg (Germany)

2011-10-15

Pulse propagation on high-frequency dissipative nonlinear transmission lines (NLTLs)/resonant tunneling diode line cascaded maps is investigated for long-distance propagation of short pulses. Applying perturbative analysis, we show that the dynamics of each line is reduced to an expanded Korteweg-de Vries-Burgers equation. Moreover, it is found by computer experiments that the soliton developed in NLTLs experiences an exponential amplitude decay on the one hand and an exponential amplitude growth on the other. As a result, the behavior of a pulse in special electrical networks made of concatenated pieces of lines is closely similar to the transmission of information in optical/electrical communication systems.

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Energy Technology Data Exchange (ETDEWEB)

Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)

2011-10-31

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

Tunneling spectroscopy on superconducting Nb3Sn with artioficial barriers

International Nuclear Information System (INIS)

Schneider, U.

1984-03-01

Tunneling diodes on Nb 3 Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb 3 Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb 3 Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb 3 Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb 3 Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb 3 Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Observing the semiconducting band-gap alignment of MoS{sub 2} layers of different atomic thicknesses using a MoS{sub 2}/SiO{sub 2}/Si heterojunction tunnel diode

Energy Technology Data Exchange (ETDEWEB)

Nishiguchi, Katsuhiko, E-mail: nishiguchi.katsuhiko@lab.ntt.co.jp; Yamaguchi, Hiroshi; Fujiwara, Akira [NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); Castellanos-Gomez, Andres; Zant, Herre S. J. van der; Steele, Gary A. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands)

2015-08-03

We demonstrate a tunnel diode composed of a vertical MoS{sub 2}/SiO{sub 2}/Si heterostructure. A MoS{sub 2} flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS{sub 2} layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS{sub 2} layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling

Directory of Open Access Journals (Sweden)

J. Racko

2012-04-01

Full Text Available The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V curve usually observed in the case of switching diodes and transistors was modeled as a result of the high concentration of traps that assist in the process of tunneling.

Real-Time Countermeasures Preventing Power System Instability by using PMU data from RTDS simulation

DEFF Research Database (Denmark)

Karatas, Bahtiyar Can; Jóhannsson, Hjörtur; Nielsen, Arne Hejde

2016-01-01

This paper presents an innovative approach to apply wide-area control actions in real-time and prevent emerging instability. A software platform has been further developed, which utilizes Real Time Digital Simulator (RTDS) technology to prevent scenarios leading to power system instability....... The software platform receives phasor measurement unit (PMU) data at a high repetition rate for full system observability. The PMU data serves as input for methods capable of analyzing the steady state torque balance for each individual generator and to determine available power reserves and possible remedial...

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

Science.gov (United States)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

InP tunnel junctions for InP/InGaAs tandem solar cells

Science.gov (United States)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

Directory of Open Access Journals (Sweden)

M. Asada

2017-11-01

Full Text Available The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

A Simplified Analytical Technique for High Frequency Characterization of Resonant Tunneling Diode

Directory of Open Access Journals (Sweden)

DESSOUKI, A. A. S.

2014-11-01

Full Text Available his paper proposes a simplified analytical technique for high frequency characterization of the resonant tunneling diode (RTD. An equivalent circuit of the RTD that consists of a parallel combination of conductance, G (V, f, and capacitance, C (V, f is formulated. The proposed approach uses the measured DC current versus voltage characteristic of the RTD to extract the equivalent circuit elements parameters in the entire bias range. Using the proposed analytical technique, the frequency response - including the high frequency range - of many characteristic aspects of the RTD is investigated. Also, the maximum oscillation frequency of the RTD is calculated. The results obtained have been compared with those concluded and reported in the literature. The reported results in literature were obtained through simulation of the RTD at high frequency using either a computationally complicated quantum simulator or through difficult RF measurements. A similar pattern of results and highly concordant conclusion are obtained. The proposed analytical technique is simple, correct, and appropriate to investigate the behavior of the RTD at high frequency. In addition, the proposed technique can be easily incorporated into SPICE program to simulate circuits containing RTD.

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

Directory of Open Access Journals (Sweden)

N Hatefi Kargan

2013-09-01

Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

Using Quantum Confinement to Uniquely Identify Devices

Science.gov (United States)

Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J.

2015-11-01

Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with minimal resources in simple electronic structures above room temperature.

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng

2011-05-01

InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)

Science.gov (United States)

Hinkov, Borislav; Schwarz, Benedikt; Harrer, Andreas; Ristanic, Daniela; Schrenk, Werner; Hugues, Maxime; Chauveau, Jean-Michel; Strasser, Gottfried

2017-02-01

The terahertz (THz) spectral range (lambda 30µm - 300µm) is also known as the "THz-gap" because of the lack of compact semiconductor devices. Various real-world applications would strongly benefit from such sources like trace-gas spectroscopy or security-screening. A crucial step is the operation of THz-emitting lasers at room temperature. But this seems out of reach with current devices, of which GaAs-based quantum cascade lasers (QCLs) seem to be the most promising ones. They are limited by the parasitic, non-optical LO-phonon transitions (36meV in GaAs), being on the same order as the thermal energy at room temperature (kT = 26meV). This can be solved by using larger LO-phonon materials like ZnO (E_LO = 72meV). But to master the fabrication of ZnO-based QC structures, a high quality epitaxial growth is crucial followed by a well-controlled fabrication process including ZnO/ZnMgO etching. We use devices grown on m-plane ZnO-substrate by molecular beam epitaxy. They are patterned by reactive ion etching in a CH4-based chemistry (CH4:H2:Ar/30:3:3 sccm) into 50μm to 150μm square mesas. Resonant tunneling diode structures are investigated in this geometry and are presented including different barrier- and well-configurations. We extract contact resistances of 8e-5 Omega cm^2 for un-annealed Ti/Au contacts and an electron mobility of above 130cm^2/Vs, both in good agreement with literature. Proving that resonant electron tunneling can be achieved in ZnO is one of the crucial building blocks of a QCL. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 665107.

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

Energy Technology Data Exchange (ETDEWEB)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

1988-02-01

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Science.gov (United States)

Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.

2018-04-01

We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

Science.gov (United States)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R.; Storm, David F.; Meyer, David J.; Zhang, Weidong; Brown, Elliott R.

2016-01-01

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm 2 and a peak-to-valley current ratio of ≈1.15 across different sizes.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Storm, David F.; Meyer, David J. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Zhang, Weidong; Brown, Elliott R. [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)

2016-08-22

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

Science.gov (United States)

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Spin-dependent tunneling transport in a lateral magnetic diode

International Nuclear Information System (INIS)

Wang, Yu; Shi, Ying

2012-01-01

Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira–Leggett Hamiltonian

International Nuclear Information System (INIS)

Sakurai, Atsunori; Tanimura, Yoshitaka

2014-01-01

The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira–Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study non-Markovian and non-perturbative thermal effects at finite temperature in a rigorous manner. We study current variation in time and the current–voltage (I–V ) relation of the resonant tunneling diode for several widths of the contact region, which consists of doped GaAs. Hysteresis and both single and double plateau-like behavior are observed in the negative differential resistance (NDR) region. While all of the current oscillations decay in time in the NDR region in the case of a strong system–bath coupling, there exist self-excited high-frequency current oscillations in some parts of the plateau in the NDR region in the case of weak coupling. We find that the effective potential in the oscillating case possesses a basin-like form on the emitter side (emitter basin) and that the current oscillation results from tunneling between the emitter basin and the quantum well in the barriers. We find two distinct types of current oscillations, with large and small oscillation amplitudes, respectively. These two types of oscillation appear differently in the Wigner space, with one exhibiting tornado-like motion and the other exhibiting a two piston engine-like motion. (paper)

Two-Element Tapered Slot Antenna Array for Terahertz Resonant Tunneling Diode Oscillators

Directory of Open Access Journals (Sweden)

Jianxiong Li

2014-01-01

Full Text Available Two-element tapered slot antenna (TSA array for terahertz (THz resonant tunneling diode (RTD oscillators is proposed in this paper. The proposed TSA array has the advantages of both the high directivity and high gain at the horizontal direction and hence can facilitate the horizontal communication between the RTD oscillators and other integrated circuit chips. A MIM (metal-insulator-metal stub with a T-shaped slot is used to reduce the mutual coupling between the TSA elements. The validity and feasibility of the proposed TSA array have been simulated and analyzed by the ANSYS/ANSOFT’s High Frequency Structure Simulator (HFSS. Detailed modeling approaches and theoretical analysis of the proposed TSA array have been fully addressed. The simulation results show that the mutual coupling between the TSA elements is reduced below −40 dB. Furthermore, at 500 GHz, the directivity, the gain, and the half power beam width (HPBW at the E-plane of the proposed TSA array are 12.18 dB, 13.09 dB, and 61°, respectively. The proposed analytical method and achieved performance are very promising for the antenna array integrated with the RTD oscillators at the THz frequency and could pave the way to the design of the THz antenna array for the RTD oscillators.

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Sin; Clavel, Michael B.; Hudait, Mantu K., E-mail: mantu.hudait@vt.edu [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Pandey, Rahul [Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Datta, Suman [Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Meeker, Michael; Khodaparast, Giti A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2016-06-28

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

Tunneling spectroscopy in NbN based Josephson junctions

International Nuclear Information System (INIS)

Chicault, R.; Villegier, J.C.

1984-08-01

Tunneling spectroscopy in high quality NbN-oxide-Pb(In) diodes offers a direct observation of various NbN and Pb phonon frequences as other vibrating modes existing near the tunnel barrier. The large number of peaks attribuated to dips in the transverses and longitudinal acoustic branches of NbN dispersion curves are found to confirm the previous theory developing the contribution of these modes to the strong coupling and high Tc behavior of NbN

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

A contribution to the study of high Tc superconducting coatings and multi-layer coatings electromagnetic properties: surface impedance measurement with a tunnel diode oscillator

International Nuclear Information System (INIS)

Omari, A.

1993-01-01

A surface impedance measurement system for conducting or superconducting thin films have been developed through the electromagnetic coupling of these films to a tunnel diode oscillator. The electromagnetic response of YBa 2 Cu 3 O 7-δ superconducting films and of id/La 2-x Sr x Cu O 4 multilayers, is studied, showing the 'granular' type of these materials. The intergranular coupling is of the SIS type for the films and of the SNS type for the multilayers. A resistance increase is observed when the temperature decreases in the superconducting phase. 120 p., 45 fig., 60 ref

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

Science.gov (United States)

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero-Bilayers.

Science.gov (United States)

Luong, Dinh Hoa; Lee, Hyun Seok; Neupane, Guru Prakash; Roy, Shrawan; Ghimire, Ganesh; Lee, Jin Hee; Vu, Quoc An; Lee, Young Hee

2017-09-01

Vertically stacked van der Waals (vdW) heterostructures have been suggested as a robust platform for studying interfacial phenomena and related electric/optoelectronic devices. While the interlayer Coulomb interaction mediated by the vdW coupling has been extensively studied for carrier recombination processes in a diode transport, its correlation with the interlayer tunneling transport has not been elucidated. Here, a contrast is reported between tunneling and drift photocurrents tailored by the interlayer coupling strength in MoSe 2 /MoS 2 hetero-bilayers (HBs). The interfacial coupling modulated by thermal annealing is identified by the interlayer phonon coupling in Raman spectra and the emerging interlayer exciton peak in photoluminescence spectra. In strongly coupled HBs, positive photocurrents are observed owing to the inelastic band-to-band tunneling assisted by interlayer excitons that prevail over exciton recombinations. By contrast, weakly coupled HBs exhibit a negative photovoltaic diode behavior, manifested as a drift current without interlayer excitonic emissions. This study sheds light on tailoring the tunneling transport for numerous optoelectronic HB devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Optically controlled resonant tunneling in a double-barrier diode

Science.gov (United States)

Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

1991-03-01

The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

2015-10-19

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

International Nuclear Information System (INIS)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick; Xing, Huili; Jena, Debdeep

2015-01-01

By the insertion of thin In x Ga 1−x N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors

Restoring proximal caries lesions conservatively with tunnel restorations.

Science.gov (United States)

Chu, Chun-Hung; Mei, May L; Cheung, Chloe; Nalliah, Romesh P

2013-07-30

The tunnel restoration has been suggested as a conservative alternative to the conventional box preparation for treating proximal caries. The main advantage of tunnel restoration over the conventional box or slot preparation includes being more conservative and increasing tooth integrity and strength by preserving the marginal ridge. However, tunnel restoration is technique-sensitive and can be particularly challenging for inexperienced restorative dentists. Recent advances in technology, such as the contemporary design of dental handpieces with advanced light-emitting diode (LED) and handheld comfort, offer operative dentists better vision, illumination, and maneuverability. The use of magnifying loupes also enhances the visibility of the preparation. The advent of digital radiographic imaging has improved dental imaging and reduced radiation. The new generation of restorative materials has improved mechanical properties. Tunnel restoration can be an option to restore proximal caries if the dentist performs proper case selection and pays attention to the details of the restorative procedures. This paper describes the clinical technique of tunnel restoration and reviews the studies of tunnel restorations.

Demonstration of forward inter-band tunneling in GaN by polarization engineering

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

2011-01-01

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm 2 at 10 mV, and 17.7 A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

A Compact Tunable Diode Laser Absorption Spectrometer to Monitor CO2 at 2.7 µm Wavelength in Hypersonic Flows

Directory of Open Access Journals (Sweden)

Raphäel Vallon

2010-06-01

Full Text Available Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship’s Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow.

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Science.gov (United States)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Fabrication and electrical characteristics for MIS diode by utilizing TiO2 ceramics

International Nuclear Information System (INIS)

Bae, S.H.

1981-01-01

Metal insulator semiconductor diodes were made by utilizing TiO 2 ceramics. Tunnel field emission is here proposed as a model for rectification in TiO 2 diode. Measurements of junction depth show very satisfactory agreement with value obtained from the Richardson plot, thus serving as additional supporting evidence of field emission in TiO 2 ceramic. The measured junction area exceeds by a factor of 10 6 the value expected by assuming field emission. The Richardson plot shows a deviation from the emission theory at low voltage, which is probably due to leakage currents which are present in MIS rutile diode. (author)

Features of the effect of the parameters of resonance systems with different configurations on the current-voltage characteristics of resonant-tunneling nanostructures in a subterahertz frequency range

International Nuclear Information System (INIS)

Aleksanyan, A.A.; Volchkov, N.A.; Dravin, V.A.; Kazakov, I.P.; Karuzskij, A.L.; Murzin, V.N.; Perestoronin, A.V.; Tskhovrebov, A.M.; Shmelev, S.S.

2014-01-01

Features of the effect of a subterahertz microwave field on the current characteristics of a resonant-tunneling diode in resonance systems with different configurations have been studied. Changes in the current characteristics of the resonant-tunneling diode under variation of the electrophysical parameters of dielectric and microstrip resonators, in particular high-Q-factor superconducting microstrip resonators, have been experimentally studied and analyzed [ru

A compact tunable diode laser absorption spectrometer to monitor CO2 at 2.7 μm wavelength in hypersonic flows.

Science.gov (United States)

Vallon, Raphäel; Soutadé, Jacques; Vérant, Jean-Luc; Meyers, Jason; Paris, Sébastien; Mohamed, Ajmal

2010-01-01

Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship's Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow.

Kinetics of current formation in molecular diode

International Nuclear Information System (INIS)

Petrov, Eh.G.; Leonov, V.A.; Shevchenko, E.V.

2012-01-01

Based on the kinetic theory of election transfer in low-dimensional molecular systems, the formation of transient and stationary currents in a system 'electrode l-molecule-electrode 2' (molecular diode) is studied for different regimes of charge transmission. In the framework of the HOMO-LUMO molecular model, a situation is considered where the current formation is initiated either by molecule photoexcitation or by change of interelectrode voltage bias. It is found that the distant (tunnel) inelastic electron transfer plays a crucial role in changing molecular electronic states and, as a result, in generating transmission channels for hopping (sequential) and distant (direct) current components. The effect of inelastic tunneling is especially pronounced in the condition of resonant electron transmission.

Mis-diode as a low-energy X- and γ-ray spectrometer

International Nuclear Information System (INIS)

Konova, A.

1980-01-01

Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

Science.gov (United States)

Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

2016-07-01

Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

Transient currents in a molecular photo-diode

OpenAIRE

Petrov, E. G.; Leonov, V. O.; May, V.; Hänggi, P.

2012-01-01

Light-induced charge transmission through a molecular junction (molecular diode) is studied in the framework of a HOMO-LUMO model and in using a kinetic description. Expressions are presented for the sequential (hopping) and direct (tunneling) transient current components together with kinetic equations governing the time-dependent populations of the neutral and charged molecular states which participate in the current formation. Resonant and off-resonant charge transmission processes are ana...

Atomic-resolution measurements with a new tunable diode laser-based interferometer

DEFF Research Database (Denmark)

Silver, R.M.; Zou, H.; Gonda, S.

2004-01-01

is lightweight and is mounted directly on an ultra-high vacuum scanning tunneling microscope capable of atomic resolution. We report the simultaneous acquisition of an atomic resolution image, while the relative lateral displacement of the tip along the sample distance is measured with the new tunable diode...

Investigation of MIM Diodes for RF Applications

KAUST Repository

Khan, Adnan

2015-05-01

Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

Science.gov (United States)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Self-consistent modelling of resonant tunnelling structures

DEFF Research Database (Denmark)

Fiig, T.; Jauho, A.P.

1992-01-01

We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrödinger equation and the Poisson equation, and the current is evaluated...... applied voltages and carrier densities at the emitter-barrier interface. We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges......, and our qualitative estimates seem consistent with recent experimental studies. The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes....

Simulation of electrical characteristics of GaN vertical Schottky diodes

Science.gov (United States)

Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

2016-12-01

Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

Science.gov (United States)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

Restoring proximal caries lesions conservatively with tunnel restorations

Directory of Open Access Journals (Sweden)

Chu CH

2013-07-01

Full Text Available Chun-Hung Chu1, May L Mei,1 Chloe Cheung,1 Romesh P Nalliah2 1Faculty of Dentistry, The University of Hong Kong, Hong Kong, People's Republic of China; 2Department of Restorative Dentistry and Biomaterials Sciences, Harvard School of Dental Medicine, Boston, MA, USA Abstract: The tunnel restoration has been suggested as a conservative alternative to the conventional box preparation for treating proximal caries. The main advantage of tunnel restoration over the conventional box or slot preparation includes being more conservative and increasing tooth integrity and strength by preserving the marginal ridge. However, tunnel restoration is technique-sensitive and can be particularly challenging for inexperienced restorative dentists. Recent advances in technology, such as the contemporary design of dental handpieces with advanced light-emitting diode (LED and handheld comfort, offer operative dentists better vision, illumination, and maneuverability. The use of magnifying loupes also enhances the visibility of the preparation. The advent of digital radiographic imaging has improved dental imaging and reduced radiation. The new generation of restorative materials has improved mechanical properties. Tunnel restoration can be an option to restore proximal caries if the dentist performs proper case selection and pays attention to the details of the restorative procedures. This paper describes the clinical technique of tunnel restoration and reviews the studies of tunnel restorations. Keywords: operative, practice, tunnel preparation, composite, amalgam, glass ionomer

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor-liquid-solid method

Science.gov (United States)

Kawaguchi, Kenichi; Takahashi, Tsuyoshi; Okamoto, Naoya; Sato, Masaru

2018-02-01

p-GaAsSb/n-InAs type-II nanowire (NW) diodes were fabricated using the position-controlled vapor-liquid-solid growth method. InAs and GaAsSb NW segments were grown vertically on GaAs(111)B substrates with the assistance of Au catalysts. Transmission electron microscopy-energy-dispersive X-ray spectroscopy analysis revealed that the GaAsSb segments have an Sb content of 40%, which is sufficient to form a tunnel heterostructure. Scanning capacitance microscope images clearly indicated the formation of a p-n junction in the NWs. Backward diode characteristics, that is, current flow toward negative bias originating from a tunnel current and current suppression toward positive bias by a heterobarrier, were demonstrated.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

Science.gov (United States)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

Science.gov (United States)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

A normal metal tunnel-junction heat diode

Energy Technology Data Exchange (ETDEWEB)

Fornieri, Antonio, E-mail: antonio.fornieri@sns.it; Martínez-Pérez, María José; Giazotto, Francesco, E-mail: giazotto@sns.it [NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy)

2014-05-05

We propose a low-temperature thermal rectifier consisting of a chain of three tunnel-coupled normal metal electrodes. We show that a large heat rectification is achievable if the thermal symmetry of the structure is broken and the central island can release energy to the phonon bath. The performance of the device is theoretically analyzed and, under the appropriate conditions, temperature differences up to ∼200 mK between the forward and reverse thermal bias configurations are obtained below 1 K, corresponding to a rectification ratio R∼2000. The simplicity intrinsic to its design joined with the insensitivity to magnetic fields make our device potentially attractive as a fundamental building block in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

International Nuclear Information System (INIS)

Vexler, M. I.; Grekhov, I. V.

2016-01-01

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification

Directory of Open Access Journals (Sweden)

Ibrahim Azad

2018-04-01

Full Text Available Thin film metal–insulator–metal (MIM diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB technique. The nickel stearate (NiSt LB precursor film was deposited on glass, silicon (Si, ITO glass and gold coated silicon substrates. The photodesorption (UV exposure and the thermodesorption (annealing at 100 °C and 350 °C methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni on the NiO film, all on a gold (Au plated silicon (Si substrate. The current (I-voltage (V characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ∼100 ohms (at a bias voltage of 0.60 V, and the rectification ratio was about 22 (for a signal voltage of ±200 mV. At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

Science.gov (United States)

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Circular polarization in a non-magnetic resonant tunneling device

Directory of Open Access Journals (Sweden)

Airey Robert

2011-01-01

Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

International Nuclear Information System (INIS)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

2016-01-01

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Altındal, Şemsettin; Özçelik, Süleyman

2009-01-01

The forward current–voltage–temperature characteristics of (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructures were studied in a temperature range of 80–375 K. The temperature dependences of the tunneling saturation current (I t ) and tunneling parameters (E 0 ) were obtained. Weak temperature dependence of the saturation current and the absence of temperature dependence of the tunneling parameters were observed in this temperature range. The results indicate that in the temperature range of 80–375 K, the mechanism of charge transport in the (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructure is performed by tunneling among dislocations intersecting the space-charge region. A model is used for nonuniform tunneling along these dislocations that intersect the space-charge region. The dislocation density that was calculated from the current–voltage characteristics, according to a model of tunneling along the dislocation line, gives the value 7.4 × 10 8 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements value of 5.9 × 10 8 cm −2 . These data show that the current flows manifest a tunneling character, even at room temperature

Tunneling in BP-MoS2 heterostructure

Science.gov (United States)

Liu, Xiaochi; Qu, Deshun; Kim, Changsik; Ahmed, Faisal; Yoo, Won Jong

Tunnel field effect transistor (TFET) is considered to be a leading option for achieving SS mV/dec. In this work, black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunction devices are fabricated. We find that thin BP flake and MoS2 form normal p-n junctions, tunneling phenomena can be observed when BP thickness increases to certain level. PEO:CsClO4 is applied on the surface of the device together with a side gate electrode patterned together with source and drain electrodes. The Fermi level of MoS2 on top of BP layer can be modulated by the side gating, and this enables to vary the MoS2-BP tunnel diode property from off-state to on-state. Since tunneling is the working mechanism of MoS2-BP junction, and PEO:CsClO4\\ possesses ultra high dielectric constant and small equivalent oxide thickness (EOT), a low SS of 55 mV/dec is obtained from MoS2-BP TFET. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes.

Science.gov (United States)

Dorda, Antonius; Schürrer, Ferdinand

2015-03-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.

Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

Energy Technology Data Exchange (ETDEWEB)

Wensorra, Jakob

2009-03-20

The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a

Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

Directory of Open Access Journals (Sweden)

Saumya Sharma

2014-11-01

Full Text Available The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA and their use in metal–insulator–metal (MIM devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition and Langmuir–Schaefer (LS, horizontal deposition techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass. The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V, and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect

Energy Technology Data Exchange (ETDEWEB)

Tomasello, R., E-mail: tomasello@deis.unical.it [Department of Computer Science, Modelling, Electronics, and System Science, University of Calabria, Rende, CS (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)

2014-05-07

This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution.

Influence of the Dzyaloshinskii-Moriya interaction on the spin-torque diode effect

International Nuclear Information System (INIS)

Tomasello, R.; Carpentieri, M.; Finocchio, G.

2014-01-01

This paper predicts the effect of the Dzyaloshinskii-Moriya interaction (DMI) and spin Hall effect in the spin-torque diode response of a Magnetic Tunnel Junction built over a Tantalum strip. Our results indicate that, for a microwave current large enough, the DMI can change qualitatively the resonant response by splitting the ferromagnetic resonance peak. We also find out that the two modes have a non-uniform spatial distribution

ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

KAUST Repository

Bera, Ashok

2015-12-28

Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

KAUST Repository

Bera, Ashok; Lin, Weinan; Yao, Yingbang; Ding, Junfeng; Lourembam, James; Wu, Tao

2015-01-01

Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

2017-01-01

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.

2017-07-27

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Directory of Open Access Journals (Sweden)

V. G. Vorobiov

2015-10-01

Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

Science.gov (United States)

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

Science.gov (United States)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

OpenAIRE

H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

2014-01-01

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

2011-01-01

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

Energy Technology Data Exchange (ETDEWEB)

Loth, S.

2007-10-26

This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

Science.gov (United States)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

Science.gov (United States)

Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

2010-01-01

The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

Directory of Open Access Journals (Sweden)

H. MAZARI

2014-05-01

Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Directory of Open Access Journals (Sweden)

P. Pipinys

2010-01-01

Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

Electroluminescence from single nanowires by tunnel injection: an experimental study

International Nuclear Information System (INIS)

Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

2007-01-01

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

Science.gov (United States)

Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

2018-05-01

A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Energy Technology Data Exchange (ETDEWEB)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

2016-01-14

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Science.gov (United States)

Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

2016-01-01

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.

Science.gov (United States)

Yan, Rusen; Fathipour, Sara; Han, Yimo; Song, Bo; Xiao, Shudong; Li, Mingda; Ma, Nan; Protasenko, Vladimir; Muller, David A; Jena, Debdeep; Xing, Huili Grace

2015-09-09

van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse, and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions and broaden the potential applications of 2D layered materials.

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Verreck, Devin, E-mail: devin.verreck@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium); Van de Put, Maarten; Sorée, Bart; Magnus, Wim [imec, Kapeldreef 75, 3001 Leuven (Belgium); Departement of Physics, Universiteit Antwerpen, 2020 Antwerpen (Belgium); Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-02-07

Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

Diode-like behavior of I–V curves of CoFe–(Al–O)/Si(100) granular thin films

Energy Technology Data Exchange (ETDEWEB)

Tuan Anh, Nguyen [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); Hanoi Community College (HCC), Trung Kinh, Cau giay, Hanoi 10000 (Viet Nam); Van Cuong, Giap [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam); HungYen University of Technology and Education (UTEHY), Khoai chau, Hung Yen 39000 (Viet Nam); Anh Tuan, Nguyen, E-mail: tuanna@itims.edu.vn [ITIMS, Hanoi University of Science and Technology (HUST), Hanoi 10000 (Viet Nam)

2015-01-15

In this study, the electrical performance of (Co{sub 70}Fe{sub 30}){sub x}(Al–O){sub 1−x} (where x=0.1 and 0.3) granular thin films sputtered on Si(1 0 0) substrates, which were subsequently annealing at 350 °C for 1 h in vacuum, was investigated. The millimeter-sized samples were installed in an in-plane lateral Ag electrode configuration on the surface. The current–voltage (I–V) characteristics were measured in bias voltages of approximately ±7 V. The I–V curves demonstrated the so-called large Coulomb gaps and diode-like asymmetric behavior similar to a Zener diode-type rectification. This remarkable behavior was evaluated using the most suitable transport models. Results suggest that an effective magnetic diode could be fabricated from millimeter-sized magnetic granular thin films. - Highlights: • The granular MTJ systems can induce a strong collective Coulomb blockage effect. • Isolated magnetic nanoparticles can form asymmetric nano-double barrier MTJ chains. • Discrete system can induce diode-like rectification as a molecular electronic rectifier. • Irreversible cotunneling through nano-double barrier MTJ chains yields rectification. • Magnetic tunnel diodes can be created simply from the granular MTJ-type thin films.

Rectification of electronic heat current by a hybrid thermal diode.

Science.gov (United States)

Martínez-Pérez, Maria José; Fornieri, Antonio; Giazotto, Francesco

2015-04-01

Thermal diodes--devices that allow heat to flow preferentially in one direction--are one of the key tools for the implementation of solid-state thermal circuits. These would find application in many fields of nanoscience, including cooling, energy harvesting, thermal isolation, radiation detection and quantum information, or in emerging fields such as phononics and coherent caloritronics. However, both in terms of phononic and electronic heat conduction (the latter being the focus of this work), their experimental realization remains very challenging. A highly efficient thermal diode should provide a difference of at least one order of magnitude between the heat current transmitted in the forward temperature (T) bias configuration (Jfw) and that generated with T-bias reversal (Jrev), leading to ℛ = Jfw/Jrev ≫ 1 or ≪ 1. So far, ℛ ≈ 1.07-1.4 has been reported in phononic devices, and ℛ ≈ 1.1 has been obtained with a quantum-dot electronic thermal rectifier at cryogenic temperatures. Here, we show that unprecedentedly high ratios of ℛ ≈ 140 can be achieved in a hybrid device combining normal metals tunnel-coupled to superconductors. Our approach provides a high-performance realization of a thermal diode for electronic heat current that could be successfully implemented in true low-temperature solid-state thermal circuits.

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Directory of Open Access Journals (Sweden)

Leon Shterengas

2016-05-01

Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.

Resonant Tunneling Analog-To-Digital Converter

Science.gov (United States)

Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.

1995-01-01

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Performance analysis of a model-sized superconducting DC transmission system based VSC-HVDC transmission technologies using RTDS

International Nuclear Information System (INIS)

Dinh, Minh-Chau; Ju, Chang-Hyeon; Kim, Sung-Kyu; Kim, Jin-Geun; Park, Minwon; Yu, In-Keun

2012-01-01

The combination of a high temperature superconducting DC power cable and a voltage source converter based HVDC (VSC-HVDC) creates a new option for transmitting power with multiple collection and distribution points for long distance and bulk power transmissions. It offers some greater advantages compared with HVAC or conventional HVDC transmission systems, and it is well suited for the grid integration of renewable energy sources in existing distribution or transmission systems. For this reason, a superconducting DC transmission system based HVDC transmission technologies is planned to be set up in the Jeju power system, Korea. Before applying this system to a real power system on Jeju Island, system analysis should be performed through a real time test. In this paper, a model-sized superconducting VSC-HVDC system, which consists of a small model-sized VSC-HVDC connected to a 2 m YBCO HTS DC model cable, is implemented. The authors have performed the real-time simulation method that incorporates the model-sized superconducting VSC-HVDC system into the simulated Jeju power system using Real Time Digital Simulator (RTDS). The performance analysis of the superconducting VSC-HVDC systems has been verified by the proposed test platform and the results were discussed in detail.

Performance analysis of a model-sized superconducting DC transmission system based VSC-HVDC transmission technologies using RTDS

Energy Technology Data Exchange (ETDEWEB)

Dinh, Minh-Chau, E-mail: thanchau7787@gmail.com [Changwon National University, 9 Sarim-Dong, Changwon 641-733 (Korea, Republic of); Ju, Chang-Hyeon; Kim, Sung-Kyu; Kim, Jin-Geun; Park, Minwon [Changwon National University, 9 Sarim-Dong, Changwon 641-733 (Korea, Republic of); Yu, In-Keun, E-mail: yuik@changwon.ac.kr [Changwon National University, 9 Sarim-Dong, Changwon 641-733 (Korea, Republic of)

2012-08-15

The combination of a high temperature superconducting DC power cable and a voltage source converter based HVDC (VSC-HVDC) creates a new option for transmitting power with multiple collection and distribution points for long distance and bulk power transmissions. It offers some greater advantages compared with HVAC or conventional HVDC transmission systems, and it is well suited for the grid integration of renewable energy sources in existing distribution or transmission systems. For this reason, a superconducting DC transmission system based HVDC transmission technologies is planned to be set up in the Jeju power system, Korea. Before applying this system to a real power system on Jeju Island, system analysis should be performed through a real time test. In this paper, a model-sized superconducting VSC-HVDC system, which consists of a small model-sized VSC-HVDC connected to a 2 m YBCO HTS DC model cable, is implemented. The authors have performed the real-time simulation method that incorporates the model-sized superconducting VSC-HVDC system into the simulated Jeju power system using Real Time Digital Simulator (RTDS). The performance analysis of the superconducting VSC-HVDC systems has been verified by the proposed test platform and the results were discussed in detail.

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Ren, Jian; Yan, Dawei, E-mail: daweiyan@jiangnan.edu.cn; Yang, Guofeng; Wang, Fuxue; Xiao, Shaoqing; Gu, Xiaofeng [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2015-04-21

Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

Tunneling technologies for the collider ring tunnels

International Nuclear Information System (INIS)

Frobenius, P.

1989-01-01

The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Science.gov (United States)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

Science.gov (United States)

Daniel, Erik Stephen

In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to

Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

International Nuclear Information System (INIS)

Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

2010-01-01

This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

Energy Technology Data Exchange (ETDEWEB)

Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

2017-04-15

Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

Electrical resistivity of monolayers and bilayers of alkanethiols in tunnel junction with gate electrode

International Nuclear Information System (INIS)

York, Roger L.; Nacionales, David; Slowinski, Krzysztof

2005-01-01

The tunneling resistances of monolayers and bilayers of n-alkanethiols in macroscopic Hg-Hg junctions with an electrochemical gate are reported. The resistances near zero bias calculated per 1 hydrocarbon chain vary from (5 ± 4) x 10 12 Ω for n-nonanethiol to (4 ± 2) x 10 16 Ω for n-octadecanethiol. These values indicate that monolayers of hydrocarbons in Hg-Hg junctions are substantially more resistive as compared to measurements employing microscopic tunnel junctions. The tunneling resistances of monolayer junctions are approximately 1 order of magnitude larger than those of bilayer junctions containing the same number of atoms indicating inefficient electronic coupling across the non-bonded -CH 3 |Hg interface. The symmetric current-voltage curves observed for the asymmetric junctions of Hg-S-(CH 2 ) n -CH 3 |Hg type suggest that these junctions do not behave as molecular diodes. Additional experimental evidence for the nature of the -CH 3 |Hg interface in the Hg-S-(CH 2 ) n -CH 3 |Hg junction is also presented

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Science.gov (United States)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

Science.gov (United States)

Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2017-09-01

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A charge inverter for III-nitride light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Geng, Chong; Xu, Shu [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401 (China); Demir, Hilmi Volkan, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey); Sun, Xiao Wei, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronic Engineering, College of Engineering, South University of Science and Technology, 1088 Xue-Yuan Road, Nanshan, Shenzhen, Guangdong 518055 (China)

2016-03-28

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

A charge inverter for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO 2 insulator layer on the p + -GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p + -GaN and SiO 2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO 2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p + -GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm 2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.

A Comparison of Resonant Tunneling Based on Schrödinger's Equation and Quantum Hydrodynamics

Directory of Open Access Journals (Sweden)

Naoufel Ben Abdallah

2002-01-01

Full Text Available Smooth quantum hydrodynamic (QHD model simulations of the current–voltage curve of a resonant tunneling diode at 300K are compared with that predicted by the mixed-state Schrödinger equation approach. Although the resonant peak for the QHD simulation occurs at 0.15V instead of the Schrödinger equation value of 0.2V, there is good qualitative agreement between the current–voltage curves for the two models, including the predicted peak current values.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Tunneling effect on double potential barriers GaAs and PbS

Science.gov (United States)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

KAUST Repository

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

2015-01-01

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

KAUST Repository

Lin, Yu-Chuan

2015-06-19

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Stable Molecular Diodes Based on π-π Interactions of the Molecular Frontier Orbitals with Graphene Electrodes.

Science.gov (United States)

Song, Peng; Guerin, Sarah; Tan, Sherman Jun Rong; Annadata, Harshini Venkata; Yu, Xiaojiang; Scully, Micheál; Han, Ying Mei; Roemer, Max; Loh, Kian Ping; Thompson, Damien; Nijhuis, Christian A

2018-03-01

In molecular electronics, it is important to control the strength of the molecule-electrode interaction to balance the trade-off between electronic coupling strength and broadening of the molecular frontier orbitals: too strong coupling results in severe broadening of the molecular orbitals while the molecular orbitals cannot follow the changes in the Fermi levels under applied bias when the coupling is too weak. Here, a platform based on graphene bottom electrodes to which molecules can bind via π-π interactions is reported. These interactions are strong enough to induce electronic function (rectification) while minimizing broadening of the molecular frontier orbitals. Molecular tunnel junctions are fabricated based on self-assembled monolayers (SAMs) of Fc(CH 2 ) 11 X (Fc = ferrocenyl, X = NH 2 , Br, or H) on graphene bottom electrodes contacted to eutectic alloy of gallium and indium top electrodes. The Fc units interact more strongly with graphene than the X units resulting in SAMs with the Fc at the bottom of the SAM. The molecular diodes perform well with rectification ratios of 30-40, and they are stable against bias stressing under ambient conditions. Thus, tunnel junctions based on graphene with π-π molecule-electrode coupling are promising platforms to fabricate stable and well-performing molecular diodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

International Nuclear Information System (INIS)

Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Höfling, Sven; Kamp, Martin; Worschech, Lukas

2014-01-01

An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1×10 4 A/W and a response up to several pA per photon at room temperature were found

Molecular electronics of a single photosystem I reaction center: Studies with scanning tunneling microscopy and spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lee, I.; Lee, J.W.; Warmack, R.J.; Allison, D.P.; Greenbaum, E. [Oak Ridge National Lab., TN (United States)

1995-03-14

Thylakoids and photosystem I (PSI) reaction centers were imaged by scanning tunneling microscopy. The thylakoids were isolated from spinach chloroplasts, and PSI reaction centers were extracted from thylakoid membranes. Because thylakoids are relatively thick nonconductors, they were sputter-coated with Pd/Au before imaging. PSI photosynthetic centers and chemically platinized PSI were investigated without sputter-coating. They were mounted on flat gold substrates that had been treated with mercaptoacetic acid to help bind the proteins. With tunneling spectroscopy, the PSI centers displayed a semiconductor-like response with a band gap of 1.8 eV. Lightly platinized (platinized for 1 hr) centers displayed diode-like conduction that resulted in dramatic contrast changes between images taken with opposite bias voltages. The electronic properties of this system were stable under long-term storage. 42 refs., 7 figs.

Coaxial foilless diode

OpenAIRE

Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

2014-01-01

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

Directory of Open Access Journals (Sweden)

M. Ciorga

2011-06-01

Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

An accurate behavioral model for single-photon avalanche diode statistical performance simulation

Science.gov (United States)

Xu, Yue; Zhao, Tingchen; Li, Ding

2018-01-01

An accurate behavioral model is presented to simulate important statistical performance of single-photon avalanche diodes (SPADs), such as dark count and after-pulsing noise. The derived simulation model takes into account all important generation mechanisms of the two kinds of noise. For the first time, thermal agitation, trap-assisted tunneling and band-to-band tunneling mechanisms are simultaneously incorporated in the simulation model to evaluate dark count behavior of SPADs fabricated in deep sub-micron CMOS technology. Meanwhile, a complete carrier trapping and de-trapping process is considered in afterpulsing model and a simple analytical expression is derived to estimate after-pulsing probability. In particular, the key model parameters of avalanche triggering probability and electric field dependence of excess bias voltage are extracted from Geiger-mode TCAD simulation and this behavioral simulation model doesn't include any empirical parameters. The developed SPAD model is implemented in Verilog-A behavioral hardware description language and successfully operated on commercial Cadence Spectre simulator, showing good universality and compatibility. The model simulation results are in a good accordance with the test data, validating high simulation accuracy.

Tunnel - history of

International Nuclear Information System (INIS)

1998-11-01

This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.

Typical Underwater Tunnels in the Mainland of China and Related Tunneling Technologies

Directory of Open Access Journals (Sweden)

Kairong Hong

2017-12-01

Full Text Available In the past decades, many underwater tunnels have been constructed in the mainland of China, and great progress has been made in related tunneling technologies. This paper presents the history and state of the art of underwater tunnels in the mainland of China in terms of shield-bored tunnels, drill-and-blast tunnels, and immersed tunnels. Typical underwater tunnels of these types in the mainland of China are described, along with innovative technologies regarding comprehensive geological prediction, grouting-based consolidation, the design and construction of large cross-sectional tunnels with shallow cover in weak strata, cutting tool replacement under limited drainage and reduced pressure conditions, the detection and treatment of boulders, the construction of underwater tunnels in areas with high seismic intensity, and the treatment of serious sedimentation in a foundation channel of immersed tunnels. Some suggestions are made regarding the three potential great strait-crossing tunnels—the Qiongzhou Strait-Crossing Tunnel, Bohai Strait-Crossing Tunnel, and Taiwan Strait-Crossing Tunnel—and issues related to these great strait-crossing tunnels that need further study are proposed. Keywords: Underwater tunnel, Strait-crossing tunnel, Shield-bored tunnel, Immersed tunnel, Drill and blast

Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)

International Nuclear Information System (INIS)

Halbritter, J.

1997-01-01

Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Nonlinear properties of double and triple barrier resonant tunneling structures in the sub-THz range

International Nuclear Information System (INIS)

Karuzskij, A.L.; Perestoronin, A.V.; Volchkov, N.A.

2012-01-01

The high-frequency nonlinear properties of GaAs/AlAs resonant tunneling diode (RTD) nanostructures and perspectives of implementation of the quantum regime of amplification in such structures, which is especially efficient in the range of sub-THz and THz ranges, are investigated. It is shown that in a triple barrier RTD the symmetry between the processes of amplification and dissipation can be avoided because of the interaction of an electromagnetic wave with both of resonant states in two quantum wells, that results in the significant growth of an RTD efficiency [ru

Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity.

Science.gov (United States)

Zhou, Xing; Hu, Xiaozong; Zhou, Shasha; Song, Hongyue; Zhang, Qi; Pi, Lejing; Li, Liang; Li, Huiqiao; Lü, Jingtao; Zhai, Tianyou

2018-02-01

van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe 2 /SnS 2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe 2 /SnS 2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe 2 /SnS 2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 10 13 Jones (I ph /I dark ratio of ≈10 6 ) and photoresponsivity of 244 A W -1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm -2 ). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

International Nuclear Information System (INIS)

Li Gui-fang; Hu Jing; Lv Hui; Cui Zhijun; Hou Xiaowei; Liu Shibin; Du Yongqian

2016-01-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co 2 MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co 2 MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. (paper)

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

Science.gov (United States)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

The influence of hydrostatic pressure on the I-U characteristic of Pb/sub 1-x/Sn/sub x/Te diodes

International Nuclear Information System (INIS)

Hoerstel, W.; Kraak, W.; Rudolph, A.F.

1983-01-01

The influence of hydrostatic pressure and temperature on the I-U characteristic of Pb/sub 1-x/Sn/sub x/Te diodes has been investigated. The measurements have been carried out under hydrostatic pressure of 95 to 1070 MPa. The experimental results obtained differ from the predictions of the recombination-tunneling model. Formally it is possible to describe the deviation by a voltage dependence of the concentration of the active traps per unit area in the junction

Monitoring pilot projects on bored tunnelling : The Second Heinenoord Tunnel and the Botlek Rail Tunnel

NARCIS (Netherlands)

Bakker, K.J.; De Boer, F.; Admiraal, J.B.M.; Van Jaarsveld, E.P.

1999-01-01

Two pilot projects for bored tunnelling in soft soil have been undertaken in the Netherlands. The monitoring was commissioned under the authority of the Centre for Underground Construction (COB). A description of the research related to the Second Heinenoord Tunnel and the Botlek Rail Tunnel will be

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2017-01-01

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

International Nuclear Information System (INIS)

Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

2015-01-01

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

Monolayer MoS{sub 2} self-switching diodes

Energy Technology Data Exchange (ETDEWEB)

Al-Dirini, Feras, E-mail: alf@unimelb.edu.au; Hossain, Md Sharafat [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Victorian Research Laboratory, National ICT Australia, West Melbourne, Victoria (Australia); Hossain, Faruque M.; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Mohammed, Mahmood A. [Princess Sumaya University for Technology, Amman (Jordan); Nirmalathas, Ampalavanapillai [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Melbourne Networked Society Institute (MNSI), University of Melbourne, Victoria (Australia)

2016-01-28

This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

Electroluminescence of a polythiophene molecular wire suspended between a metallic surface and the tip of a scanning tunneling microscope.

Science.gov (United States)

Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Dappe, Yannick J; Mathevet, Fabrice; Schull, Guillaume

2014-01-31

The electroluminescence of a polythiophene wire suspended between a metallic surface and the tip of a scanning tunneling microscope is reported. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.

Long pulse diode experiments

Science.gov (United States)

McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

1990-10-01

A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

Science.gov (United States)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.

2017-11-27

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-01-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Energy Technology Data Exchange (ETDEWEB)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

2016-03-07

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Variability in ACL tunnel placement: observational clinical study of surgeon ACL tunnel variability.

Science.gov (United States)

Wolf, Brian R; Ramme, Austin J; Wright, Rick W; Brophy, Robert H; McCarty, Eric C; Vidal, Armando R; Parker, Richard D; Andrish, Jack T; Amendola, Annunziato

2013-06-01

Multicenter and multisurgeon cohort studies on anterior cruciate ligament (ACL) reconstruction are becoming more common. Minimal information exists on intersurgeon and intrasurgeon variability in ACL tunnel placement. Purpose/ The purpose of this study was to analyze intersurgeon and intrasurgeon variability in ACL tunnel placement in a series of The Multicenter Orthopaedic Outcomes Network (MOON) ACL reconstruction patients and in a clinical cohort of ACL reconstruction patients. The hypothesis was that there would be minimal variability between surgeons in ACL tunnel placement. Cross-sectional study; Level of evidence, 3. Seventy-eight patients who underwent ACL reconstruction by 8 surgeons had postoperative imaging with computed tomography, and ACL tunnel location and angulation were analyzed using 3-dimensional surface processing and measurement. Intersurgeon and intrasurgeon variability in ACL tunnel placement was analyzed. For intersurgeon variability, the range in mean ACL femoral tunnel depth between surgeons was 22%. For femoral tunnel height, there was a 19% range. Tibial tunnel location from anterior to posterior on the plateau had a 16% range in mean results. There was only a small range of 4% for mean tibial tunnel location from the medial to lateral dimension. For intrasurgeon variability, femoral tunnel depth demonstrated the largest ranges, and tibial tunnel location from medial to lateral on the plateau demonstrated the least variability. Overall, surgeons were relatively consistent within their own cases. Using applied measurement criteria, 85% of femoral tunnels and 90% of tibial tunnels fell within applied literature-based guidelines. Ninety-one percent of the axes of the femoral tunnels fell within the boundaries of the femoral footprint. The data demonstrate that surgeons performing ACL reconstructions are relatively consistent between each other. There is, however, variability of average tunnel placement up to 22% of mean condylar depth

Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

OpenAIRE

Font Capó, Jordi

2012-01-01

A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

Current rectification in a single molecule diode: the role of electrode coupling.

Science.gov (United States)

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-24

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Luminescence and squeezing of a superconducting light-emitting diode

Science.gov (United States)

Hlobil, Patrik; Orth, Peter P.

2015-05-01

We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

Novel five-state latch using double-peak negative differential resistance and standard ternary inverter

Science.gov (United States)

Shin, Sunhae; Rok Kim, Kyung

2016-04-01

We propose complement double-peak negative differential resistance (NDR) devices with ultrahigh peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with conventional CMOS and its compact five-state latch circuit by introducing standard ternary inverter (STI). At the “high”-state of STI, n-type NDR device (tunnel diode with nMOS) has 1st NDR characteristics with 1st peak and valley by band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT), whereas p-type NDR device (tunnel diode with pMOS) has second NDR characteristics from the suppression of diode current by off-state MOSFET. The “intermediate”-state of STI permits double-peak NDR device to operate five-state latch with only four transistors, which has 33% area reduction compared with that of binary inverter and 57% bit-density reduction compared with binary latch.

Resonant tunneling measurements of size-induced strain relaxation

Science.gov (United States)

Akyuz, Can Deniz

Lattice mismatch strain available in such semiconductor heterostructures as Si/SiGe or GaAs/AlGaAs can be employed to alter the electronic and optoelectronic properties of semiconductor structures and devices. When deep submicron structures are fabricated from strained material, strained layers relax by sidewall expansion giving rise to size- and geometry-dependent strain gradients throughout the structure. This thesis describes a novel experimental technique to probe the size-induced strain relaxation by studying the tunneling current characteristics of strained p-type Si/SiGe resonant tunneling diodes. Our current-voltage measurements on submicron strained p-Si/SiGe double- and triple-barrier resonant tunneling structures as a function of device diameter, D, provide experimental access to both the average strain relaxation (which leads to relative shifts in the tunneling current peak positions) and strain gradients (which give rise to a fine structure in the current peaks due to inhomogeneous strain-induced lateral quantization). We find that strain relaxation is significant, with a large fraction of the strain energy relaxed on average in D ≤ 0.25 m m devices. Further, the in-plane potentials that arise from inhomogeneous strain gradients are large. In the D ˜ 0.2 m m devices, the corresponding lateral potentials are approximately parabolic exceeding ˜ 25 meV near the perimeter. These potentials create discrete hole states in double-barrier structures (single well), and coupled hole states in triple-barrier structures (two wells). Our results are in excellent agreement with finite-element strain calculations in which the strained layers are permitted to relax to a state of minimum energy by sidewall expansion. Size-induced strain relaxation will undoubtedly become a serious technological issue once strained devices are scaled down to the deep submicron regime. Interestingly, our calculations predict and our measurements are consistent with the appearance of

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

International Nuclear Information System (INIS)

Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

2016-01-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2016-08-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Carpal Tunnel Syndrome

Science.gov (United States)

... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

Theory of superconducting tunneling without the tunneling Hamiltonian

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

A low energy muon spin rotation and point contact tunneling study of niobium films prepared for superconducting cavities

Science.gov (United States)

Junginger, Tobias; Calatroni, S.; Sublet, A.; Terenziani, G.; Prokscha, T.; Salman, Z.; Suter, A.; Proslier, T.; Zasadzinski, J.

2017-12-01

Point contact tunneling and low energy muon spin rotation are used to probe, on the same samples, the surface superconducting properties of micrometer thick niobium films deposited onto copper substrates using different sputtering techniques: diode, dc magnetron and HIPIMS. The combined results are compared to radio-frequency tests performances of RF cavities made with the same processes. Degraded surface superconducting properties are found to correlate to lower quality factors and stronger Q-slope. In addition, both techniques find evidence for surface paramagnetism on all samples and particularly on Nb films prepared by HIPIMS.

Tunneling works. Tunnel koji

Energy Technology Data Exchange (ETDEWEB)

Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

1991-10-25

A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

International Nuclear Information System (INIS)

Lee, Ya-Ju; Chen, Yi-Ching; Lu, Tien-Chang

2011-01-01

The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

Tunneling junction as an open system. Normal tunneling

International Nuclear Information System (INIS)

Ono, Y.

1978-01-01

The method of the tunneling Hamiltonian is reformulated in the case of normal tunneling by introducing two independent particle baths. Due to the baths, it becomes possible to realize a final stationary state where the electron numbers of the two electrodes in the tunneling system are maintained constant and where there exists a stationary current. The effect of the bath-system couplings on the current-voltage characteristics of the junction is discussed in relation to the usual expression of the current as a function of voltage. (Auth.)

Performance of the cold powered diodes and diode leads in the main magnets of the LHC

CERN Document Server

Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

2015-01-01

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

Tunneling time, exit time and exit momentum in strong field tunnel ionization

International Nuclear Information System (INIS)

Teeny, Nicolas

2016-01-01

Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

Tunneling time, exit time and exit momentum in strong field tunnel ionization

Energy Technology Data Exchange (ETDEWEB)

Teeny, Nicolas

2016-10-18

Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

Quantum theory of tunneling

CERN Document Server

Razavy, Mohsen

2014-01-01

In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

Science.gov (United States)

Abbasian, Sobhan; Sabbaghi-Nadooshan, Reza

2018-03-01

The operation of hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diode transferred more electrons and holes and showed less recombination between the top and bottom cells with increased efficiency (η) in the InGaP/GaAs DJ solar cell. To achieve higher open-circuit voltage (V oc), GaAs semiconductor was investigated to match with Al0.52In0.48P with bandgap of 2.4 eV, and replacement of the bottom cell in the InGaP/GaAs DJ solar cell with such an Al0.52In0.48P-GaAs heterojunction increased the photogeneration in this region. In the next step, addition of a BSF layer to the top cell required two BSF layers in the bottom cell to optimize the short-circuit current (J sc) and η. The thickness and doping of the BSF layers were increased to obtain the highest η for the cell. The proposed structure was then compared with previous works. The proposed structure yielded V oc = 2.46 V, J sc = 30 mA/cm2, fill factor (FF) = 88.61%, and η = 65.51% under AM1.5 (1 sun) illumination.

Shot Noise in Negative-Differential-Conductance Devices

National Research Council Canada - National Science Library

Song, W

2003-01-01

The authors have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC...

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

Directory of Open Access Journals (Sweden)

Kai Braun

2015-05-01

Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

Science.gov (United States)

Zhu, Mengjian; Luo, Wei; Wu, Nannan; Zhang, Xue-ao; Qin, Shiqiao

2018-04-01

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ˜1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors.

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Science.gov (United States)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-06-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

International Nuclear Information System (INIS)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-01-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

2015-06-21

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

Directory of Open Access Journals (Sweden)

Chin-Sheng Pang

2014-04-01

Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

Spin-dependent tunnelling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

2003-01-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

Fast pulse discriminator for photon counting at high photon densities

International Nuclear Information System (INIS)

Benoit, R.; Pedrini, A.

1977-03-01

A fast tunnel diode discriminator for photon counting up to 200MHz count frequency is described. The tunnel diode is operated on its apparent I.V. characteristics displayed when the diode is driven into its oscillating region. The pulse shaper-discriminator is completely D.C. coupled in order to avoid base-line shift at high pulse rates

Tunnel fire dynamics

CERN Document Server

Ingason, Haukur; Lönnermark, Anders

2015-01-01

This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

Proton tunneling in solids

Energy Technology Data Exchange (ETDEWEB)

Kondo, J.

1998-10-01

The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

Proton tunneling in solids

International Nuclear Information System (INIS)

Kondo, J.

1998-01-01

The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Magnetically insulated H- diodes

International Nuclear Information System (INIS)

Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

1993-01-01

At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

International Nuclear Information System (INIS)

Naaman, O.; Teizer, W.; Dynes, R. C.

2001-01-01

We demonstrate Josephson tunneling in vacuum tunnel junctions formed between a superconducting scanning tunneling microscope tip and a Pb film, for junction resistances in the range 50--300 k Omega. We show that the superconducting phase dynamics is dominated by thermal fluctuations, and that the Josephson current appears as a peak centered at small finite voltage. In the presence of microwave fields (f=15.0 GHz) the peak decreases in magnitude and shifts to higher voltages with increasing rf power, in agreement with theory

The ISI Tunnel

Science.gov (United States)

1993-10-01

DP /etc/tunnelvisa p zephyr dark -star TCP /etc/tunnelvisa p zephyr dak’star ICMP /etc/tunnelvisa p zephyr quark MDP /etc/tunnelvisa p zephyr quark ...drax-net-yp 128.9.32.2 1 route add quark -net-yp 128.9.32.3 1 route add vlsi-net-yp 128.9.32.4 1 route add darkstar-net-yp 128.9.32.3 1 route add rocky...TCP /etc/tunnel-visa p zephyr quark ICMP /etc/tunnel-visa p zephyr drax tTI)P /etc/tunnel-visa p zephyr drax TCP /etc/tunnel_visa p zephyr drax ICMP

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

2011-01-01

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

Vortex diode jet

Science.gov (United States)

Houck, Edward D.

1994-01-01

A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

Tunneling through landsliding zone; Jisuberi chitainai no tunnel seko

Energy Technology Data Exchange (ETDEWEB)

Konbu, A; Hatabu, K; Kano, T [Tekken Corp., Tokyo (Japan)

1994-08-01

At the new tunnel construction site of the Shirakata tunnel on the Obama line in Yamaguchi Prefecture, a landsliding occurred at about 60 meters to the upper portion obliquely to the right hand side of the shaft when the excavation progressed to about 10 meters from the starting side. The landslide caused displacement at the shaft opening and change in the supports. As a result of the re-investigation, it was confirmed that the slide face went through the tunnel cross section. The measures taken were removal of the upper soil and an adoption of the all ground fastening (AGF) method (injection type long tip fastening method) as an auxiliary construction to stop loosening of the natural ground associated with the tunnel excavation. The result was a completion of tunneling the landsliding zone without a problem. This paper reports the AGF method adopted in the above construction, together with the construction works and natural ground conditions. The AGF method is about the same as the pipe roof method with regard to the natural ground accepting mechanism and the materials used. The difference is building an improved body in a limited area in the natural ground around the steel pipes by injecting the fixing material. The use of this method caused no problems in subsidence and displacement in the surrounding ground, and completed the tunneling construction without an unusual event. 1 ref., 7 figs., 2 tabs.

Similarities and differences of alkali metal chlorides applied in organic light-emitting diodes

International Nuclear Information System (INIS)

Lü, Zhaoyue; Deng, Zhenbo; Hou, Ying; Xu, Haisheng

2012-01-01

The similarities and differences of alkali metal chlorides (sodium chloride (NaCl), potassium chloride (KCl), rubidium chloride (RbCl) and cesium chloride (CsCl)) applied in organic light-emitting diodes (OLEDs) are investigated. The behavior is similar for the OLEDs with these four chlorides as electron injection layer (EIL). Their maximum luminance and efficiency at 100 mA/cm 2 are within the ranges of 18 550 ± 600 (cd/m 2 ) with an error of 3.23% and 4.09 ± 0.15 (cd/A) within an error of 3.67%, respectively. The similar performance is due to almost identical electron injection barrier for NaCl, KCl, RbCl and CsCl as EIL. Interestingly, the properties are different for devices with chlorides inserted inside tris (8-hydroxyquinoline) aluminum at the position of 20 nm away from aluminum cathode, labeled as NaCl-, KCl-, RbCl- and CsCl- devices. The relation of luminance is CsCl- > RbCl- = KCl- > NaCl-, where “>” and “=” mean “better than” and “the same as”, respectively. And the device efficiencies are decreased from CsCl to NaCl. That is, the sort order of the efficiencies is CsCl- > RbCl- > KCl- > NaCl-. The mechanism is explained by tunneling model in terms of various energy gaps estimated by optical electronegativity of NaCl, KCl, RbCl and CsCl. - Highlights: ► Effects of NaCl, KCl, RbCl and CsCl in organic light-emitting diodes are compared. ► The similar performance is due to almost identical electron injection barrier. ► The different behavior of chlorides inside Alq 3 is explained by tunneling model. ► The different behavior is attributed to various energy gaps of different chlorides. ► The efficiency of device with chlorides inside Alq 3 is decreased from CsCl to NaCl.

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

International Nuclear Information System (INIS)

Gajewski, Krzysztof; Piasecki, Tomasz; Kopiec, Daniel; Gotszalk, Teodor

2017-01-01

Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown. (paper)

Operation and maintenance manual for diode performance analysis program DIODE0

International Nuclear Information System (INIS)

Boyer, W.B.

1977-03-01

This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

Science.gov (United States)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

Science.gov (United States)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Design, Fabrication and Characterization of MIM Diodes and Frequency Selective Thermal Emitters for Solar Energy Harvesting and Detection Devices

Science.gov (United States)

Sharma, Saumya

Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30microV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

NARCIS (Netherlands)

Jansen, R.; Lodder, J.C.

2000-01-01

Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

Quantum tunneling time

International Nuclear Information System (INIS)

Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.

2004-01-01

We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

Measuring fire size in tunnels

International Nuclear Information System (INIS)

Guo, Xiaoping; Zhang, Qihui

2013-01-01

A new measure of fire size Q′ has been introduced in longitudinally ventilated tunnel as the ratio of flame height to the height of tunnel. The analysis in this article has shown that Q′ controls both the critical velocity and the maximum ceiling temperature in the tunnel. Before the fire flame reaches tunnel ceiling (Q′ 1.0), Fr approaches a constant value. This is also a well-known phenomenon in large tunnel fires. Tunnel ceiling temperature shows the opposite trend. Before the fire flame reaches the ceiling, it increases very slowly with the fire size. Once the flame has hit the ceiling of tunnel, temperature rises rapidly with Q′. The good agreement between the current prediction and three different sets of experimental data has demonstrated that the theory has correctly modelled the relation among the heat release rate of fire, ventilation flow and the height of tunnel. From design point of view, the theoretical maximum of critical velocity for a given tunnel can help to prevent oversized ventilation system. -- Highlights: • Fire sizing is an important safety measure in tunnel design. • New measure of fire size a function of HRR of fire, tunnel height and ventilation. • The measure can identify large and small fires. • The characteristics of different fire are consistent with observation in real fires

Microwave-induced co-tunneling in single electron tunneling transistors

DEFF Research Database (Denmark)

Ejrnaes, M.; Savolainen, M.; Manscher, M.

2002-01-01

on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

International Nuclear Information System (INIS)

Jiang Zhi; Zhuang Yi-Qi; Li Cong; Wang Ping; Liu Yu-Qi

2016-01-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D it ) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. (paper)

Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

OpenAIRE

Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

1995-01-01

By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

Parabolic and diffused resonant tunneling diodes; transmission coefficient; current–voltage characteristics; dark current. Abstract. Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is proposed as a viable alternative to that using parabolic quantum well which requires ...

Manufacture of axially insulated large-area diodes

International Nuclear Information System (INIS)

Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

1999-01-01

The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

Science.gov (United States)

Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

2016-02-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

About tunnelling times

International Nuclear Information System (INIS)

Olkhovsky, V.S.; Recami, E.

1991-08-01

In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

Enhanced vbasis laser diode package

Science.gov (United States)

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Tunneling current between graphene layers

OpenAIRE

Poklonski, Nikolai A.; Siahlo, Andrei I.; Vyrko, Sergey A.; Popov, Andrey M.; Lozovik, Yurii E.

2013-01-01

The physical model that allows to calculate the values of the tunneling current be-tween graphene layers is proposed. The tunneling current according to the pro-posed model is proportional to the area of tunneling transition. The calculated value of tunneling conductivity is in qualitative agreement with experimental data.

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-01-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-03-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

Single Electron Tunneling

International Nuclear Information System (INIS)

Ruggiero, Steven T.

2005-01-01

Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

Drill and blast tunnelling; Konvensjonell drift av tunneler

Energy Technology Data Exchange (ETDEWEB)

Roenn, Paal-Egil

1997-12-31

This thesis treats drill and blast tunnelling. The rapid technological advance necessitates revised and updated design criteria, quality requirements and quality control. In situ blast experiments were carried out in order to test new methods and improve the basis for calculation and design. The main topics of the experiments were (1) longer rounds and increased drillhole diameter, (2) emulsion slurry as explosives in tunnelling, and (3) electronic detonators in contour blasting. The experiments show that it is technically feasible to blast rounds of up to 8.6 m length. Using current technology, the economical optimum round length is substantially shorter. Dust, low visibility, noise and toxic fumes are occupational environmental strains for the tunnel workers. Several of the environmental factors are strongly influenced by the type of explosives used. For example, emulsion slurry resulted in 4 to 5 times better visibility than Anolit and the concentration of respirable dust and total dust was reduced by 30-50 %. Electronic detonators were tested and found to give a higher percentage of remaining drillholes in the contour than Nonel detonators. The thesis includes a chapter on economic design of hydropower tunnels. 42 refs., 83 figs., 45 tabs.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.

2011-08-24

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

2011-01-01

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Directory of Open Access Journals (Sweden)

Moonsang Lee

2018-06-01

Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Infrared spectra and tunneling dynamics of the N2-D2O and OC-D2O complexes in the v2 bend region of D2O.

Science.gov (United States)

Zhu, Yu; Zheng, Rui; Li, Song; Yang, Yu; Duan, Chuanxi

2013-12-07

The rovibrational spectra of the N2-D2O and OC-D2O complexes in the v2 bend region of D2O have been measured in a supersonic slit jet expansion using a rapid-scan tunable diode laser spectrometer. Both a-type and b-type transitions were observed for these two complexes. All transitions are doubled, due to the heavy water tunneling within the complexes. Assuming the tunneling splittings are the same in K(a) = 0 and K(a) = 1, the band origins, all three rotational and several distortion constants of each tunneling state were determined for N2-D2O in the ground and excited vibrational states, and for OC-D2O in the excited vibrational state, respectively. The averaged band origin of OC-D2O is blueshifted by 2.241 cm(-1) from that of the v2 band of the D2O monomer, compared with 1.247 cm(-1) for N2-D2O. The tunneling splitting of N2-D2O in the ground state is 0.16359(28) cm(-1), which is about five times that of OC-D2O. The tunneling splittings decrease by about 26% for N2-D2O and 23% for OC-D2O, respectively, upon excitation of the D2O bending vibration, indicating an increase of the tunneling barrier in the excited vibrational state. The tunneling splittings are found to have a strong dependence on intramolecular vibrational excitation as well as a weak dependence on quantum number K(a).

Focusing experiments with light ion diodes

International Nuclear Information System (INIS)

Johnson, D.L.

1978-01-01

A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Science.gov (United States)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Electrical installations of the Channel tunnel; Installations electriques du Tunnel sous la Manche

Energy Technology Data Exchange (ETDEWEB)

Kersabiec, G. de [Eurotunnel, Folkestone (United Kingdom)

2002-08-01

Like an underground factory, the railway and auxiliary equipments of the Channel tunnel between France and UK, need a reliable and redundant power supply with a high quality maintenance. This article presents: the design criteria of the power distribution systems, the installation itself and the organisation of its exploitation: 1 - transportation system of the Channel tunnel (loads to supply, exploitation imperatives, fundamental criteria); 2 - external power sources (connection to the UK and French grids, values used by the national grids); 3 - exploitation criteria, tunnel design; 4 - description (main UK and French power stations, 25 kV traction network, 21 kV distribution network, tunnels, lighting in railway tunnels, supply of terminals, earthing network); 5 - exploitation; 6 - maintenance and quality. (J.S.)

Heavy-Atom Tunneling Calculations in Thirteen Organic Reactions: Tunneling Contributions are Substantial, and Bell's Formula Closely Approximates Multidimensional Tunneling at ≥250 K.

Science.gov (United States)

Doubleday, Charles; Armas, Randy; Walker, Dana; Cosgriff, Christopher V; Greer, Edyta M

2017-10-09

Multidimensional tunneling calculations are carried out for 13 reactions, to test the scope of heavy-atom tunneling in organic chemistry, and to check the accuracy of one-dimensional tunneling models. The reactions include pericyclic, cycloaromatization, radical cyclization and ring opening, and S N 2. When compared at the temperatures that give the same effective rate constant of 3×10 -5  s -1 , tunneling accounts for 25-95 % of the rate in 8 of the 13 reactions. Values of transmission coefficients predicted by Bell's formula, κ Bell  , agree well with multidimensional tunneling (canonical variational transition state theory with small curvature tunneling), κ SCT . Mean unsigned deviations of κ Bell vs. κ SCT are 0.08, 0.04, 0.02 at 250, 300 and 400 K. This suggests that κ Bell is a useful first choice for predicting transmission coefficients in heavy-atom tunnelling. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

Science.gov (United States)

Nazin, G V; Wu, S W; Ho, W

2005-06-21

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

Vacuum phonon tunneling.

Science.gov (United States)

Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

2010-10-15

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

Breaking through the tranfer tunnel

CERN Document Server

Laurent Guiraud

2001-01-01

This image shows the tunnel boring machine breaking through the transfer tunnel into the LHC tunnel. Proton beams will be transferred from the SPS pre-accelerator to the LHC at 450 GeV through two specially constructed transfer tunnels. From left to right: LHC Project Director, Lyn Evans; CERN Director-General (at the time), Luciano Maiani, and Director for Accelerators, Kurt Hubner.

Inelastic transport and low-bias rectification in a single-molecule diode.

Science.gov (United States)

Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

2004-01-01

A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

Histological Observation of Regions around Bone Tunnels after Compression of the Bone Tunnel Wall in Ligament Reconstruction

International Nuclear Information System (INIS)

Maeda, Shintaro; Ishikawa, Hiroki; Tanigawa, Naoaki; Miyazaki, Kyosuke; Shioda, Seiji

2012-01-01

The objectives of this study were to investigate the time-course of influence of compression of bone tunnel wall in ligament reconstruction on tissue around the bone tunnel and to histologically examine the mechanism of preventing the complication of bone tunnel dilation, using rabbit tibia. A model in which the femoral origin of the extensor digitorum longus tendon was cut and inserted into a bone tunnel made proximal to the tibia was prepared in the bilateral hind legs of 20 Japanese white rabbits. In each animal, a tunnel was made using a drill only in the right leg, while an undersized bone tunnel was made by drilling and then dilated by compression using a dilator to the same tunnel size as that in the right leg. Animals were sacrificed at 0, 2, 4, 8 and 12 weeks after surgery (4 animals at each time point). Observation of bone tunnels by X-ray radiography showed osteosclerosis in the 2- and 4-week dilation groups. Osteosclerosis appeared as white lines around the bone tunnel on X-ray radiography. This suggests that dilation promotes callus formation in the bone tunnel wall and prevents the complication of bone tunnel enlargement after ligament reconstruction

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Thermometric characteristics of silicon semiconductor diodes

International Nuclear Information System (INIS)

Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

1975-01-01

To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

New development of solid state sub-millimeter sources

International Nuclear Information System (INIS)

Nishizawa, Jun-ichi

1982-01-01

The TUNNETT (tunnel injection transit time negative resistance) diode was proposed by the author in the analysis of avalanching negative resistance diodes and seemed to be the most promising semiconductor source in the frequency range from 100 to 1000 GHz. The first TUNNETT oscillation was realized experimentally in 1968 from a GaAs p + n diode. Recently, several types of GaAs TUNNETT diodes have been fabricated by the use of the author's new liquid phase epitaxial method, which is named the temperature difference method under controlled vapour pressure. The oscillation characteristics of p + - n - n + diodes are shown. On the other hand, the static induction transistor (SIT) shows the excellent performance for high power use in microwave region. The static induced tunnel transit time transistor (SIT 4 ) is a kind of SIT in which the injection source region is replaced by the tunnel injection for use in submillimeter region. In SIT 4 , the gate voltage controls the field of the tunnelling region, and the tunnelling electrons transit to the drain without reaching the gate. The SIT's using tunnelling and ideal (ballistic) SIT are promising devices in submillimeter region. The author suggested the generation of electromagnetic waves by using phonons in semiconductors from submillimeter to infared. Above 1000 GHz up to 100 THz of the field of conventional semiconductors, semiconductor Raman and Brillouin lasers are expected to be the most useful devices in the future. (Wakatsuki, Y.)

Tunnel fire testing and modeling the Morgex North tunnel experiment

CERN Document Server

Borghetti, Fabio; Gandini, Paolo; Frassoldati, Alessio; Tavelli, Silvia

2017-01-01

This book aims to cast light on all aspects of tunnel fires, based on experimental activities and theoretical and computational fluid dynamics (CFD) analyses. In particular, the authors describe a transient full-scale fire test (~15 MW), explaining how they designed and performed the experimental activity inside the Morgex North tunnel in Italy. The entire organization of the experiment is described, from preliminary evaluations to the solutions found for management of operational difficulties and safety issues. This fire test allowed the collection of different measurements (temperature, air velocity, smoke composition, pollutant species) useful for validating and improving CFD codes and for testing the real behavior of the tunnel and its safety systems during a diesel oil fire with a significant heat release rate. Finally, the fire dynamics are compared with empirical correlations, CFD simulations, and literature measurements obtained in other similar tunnel fire tests. This book will be of interest to all ...

Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation

International Nuclear Information System (INIS)

Nam, C.H.; Shim, Heejae; Kim, K.S.; Cho, B.K.

2004-01-01

Oxidation of an AlO x insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 A thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Quantum mechanical tunneling in chemical physics

CERN Document Server

Nakamura, Hiroki

2016-01-01

Quantum mechanical tunneling plays important roles in a wide range of natural sciences, from nuclear and solid-state physics to proton transfer and chemical reactions in chemistry and biology. Responding to the need for further understanding of multidimensional tunneling, the authors have recently developed practical methods that can be applied to multidimensional systems. Quantum Mechanical Tunneling in Chemical Physics presents basic theories, as well as original ones developed by the authors. It also provides methodologies and numerical applications to real molecular systems. The book offers information so readers can understand the basic concepts and dynamics of multidimensional tunneling phenomena and use the described methods for various molecular spectroscopy and chemical dynamics problems. The text focuses on three tunneling phenomena: (1) energy splitting, or tunneling splitting, in symmetric double well potential, (2) decay of metastable state through tunneling, and (3) tunneling effects in chemical...

Tunneling into quantum wires: regularization of the tunneling Hamiltonian and consistency between free and bosonized fermions

OpenAIRE

Filippone, Michele; Brouwer, Piet

2016-01-01

Tunneling between a point contact and a one-dimensional wire is usually described with the help of a tunneling Hamiltonian that contains a delta function in position space. Whereas the leading order contribution to the tunneling current is independent of the way this delta function is regularized, higher-order corrections with respect to the tunneling amplitude are known to depend on the regularization. Instead of regularizing the delta function in the tunneling Hamiltonian, one may also obta...

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Plasma filled diodes and application to a PEOS

International Nuclear Information System (INIS)

Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.

1985-01-01

Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens

AIR FLOW AND ENVIRONMENTAL WIND VISUALIZATION USING A CW DIODE PUMPED FREQUENCY DOUBLED Nd:YAG Laser

Directory of Open Access Journals (Sweden)

Mircea UDREA

2009-09-01

Full Text Available Preliminary results obtained in developing a visualisation technique for non-invasive analysis of air flow inside INCAS subsonic wind tunnel and its appendages are presented. The visualisation technique is based on using a green light sheet generated by a continuous wave (cw longitudinally diode pumped and frequency doubled Nd:YAG laser. The output laser beam is expanded on one direction and collimated on rectangular direction. The system is tailored to the requirements of qualitative analysis and vortex tracking requirements inside the INCAS 2.5m x 2.0m subsonic wind tunnel test section, for measurements performed on aircraft models. Also the developed laser techniques is used for non-invasive air flow field analysis into environmental facilities settling room (air flow calming area. Quantitative analysis is enabled using special image processing tools upon movies and pictures obtained during the experiments. The basic experimental layout in the wind tunnel takes advantage of information obtained from the investigation of various aircraft models using the developed visualisation technique. These results are further developed using a Particle Imaging Velocimetry (PIV experimental technique.The focus is on visualisation techniques to be used for wind flow characterization at different altitudes in indus-trial and civil buildings areas using a light sheet generated by a Nd:YAG cw pumped and doubled laser at 532 nm wave-length. The results are important for prevention of biological/chemical disasters such as spreading of extremely toxic pol-lutants due to wind. Numerical simulations of wind flow and experimental visualisation results are compared. A good agreement between these results is observed.

Recent advancements in spectroscopy using tunable diode lasers

International Nuclear Information System (INIS)

Nasim, Hira; Jamil, Yasir

2013-01-01

Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

Tunnelling of a molecule

International Nuclear Information System (INIS)

Jarvis, P.D.; Bulte, D.P.

1998-01-01

A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times t H and t BL , with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e -iω(t+Δt) , Δt = t H - it BL . A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia

Influence of quasiparticle multi-tunneling on the energy flow through the superconducting tunnel junction

International Nuclear Information System (INIS)

Samedov, V. V.; Tulinov, B. M.

2011-01-01

Superconducting tunnel junction (STJ) detector consists of two layers of superconducting material separated by thin insulating barrier. An incident particle produces in superconductor excess nonequilibrium quasiparticles. Each quasiparticle in superconductor should be considered as quantum superposition of electron-like and hole-like excitations. This duality nature of quasiparticle leads to the effect of multi-tunneling. Quasiparticle starts to tunnel back and forth through the insulating barrier. After tunneling from biased electrode quasiparticle loses its energy via phonon emission. Eventually, the energy that equals to the difference in quasiparticle energy between two electrodes is deposited in the signal electrode. Because of the process of multi-tunneling, one quasiparticle can deposit energy more than once. In this work, the theory of branching cascade processes was applied to the process of energy deposition caused by the quasiparticle multi-tunneling. The formulae for the mean value and variance of the energy transferred by one quasiparticle into heat were derived. (authors)

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Carbon nanotube Schottky diode: an atomic perspective

International Nuclear Information System (INIS)

Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

2008-01-01

The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

Enhanced MRI in carpal tunnel syndrome

International Nuclear Information System (INIS)

Hayakawa, Katsuhiko; Nakane, Takashi; Kobayashi, Shigeru; Asai, Takahiro; Wada, Kunio; Yoshizawa, Hidezo

1998-01-01

In this study, we performed contrast-enhanced MRI in patients with idiopathic carpal tunnel syndrome and examined the morphologic change in the carpal tunnel. In the transverse section of the opening of carpal tunnel where scaphoid and pisiform bones are figured out, we measured and examined 4 items, viz. the soft carpal tunnel volume, flat rate of median nerve, position of median nerve and thickness of palmer ligaments composing the base of carpal tunnel, with an image analyzer attached to the MRI apparatus. Whereas the average carpal tunnel volume in 12 hands of normal controls was 166.8 mm 2 , that in 74 hands of carpal tunnel syndrome was 207.2 mm 2 , a significant increase compared with the normal controls. The flat rate of median nerve was 46% in the controls, but that was 37.5% in the carpal tunnel syndrome, a significant flattening was noted. We connected the peaks of the scaphoid node and pisiform bone with a line and named it standard line. When we observed the position of median nerve in the carpal tunnel, the nerve in 9 of 12 hands, 75%, lay below the standard line in the controls, but the nerve in 65 of 74 hands, 87.8%, lay above the standard line in the carpal tunnel syndrome, clearly showing that the median nerve had shifted to the palmar side. Regarding these morphologic changes of the carpal tunnel, the internal pressure of the carpal tunnel is considered to be raised with swelling of the soft tissues mainly composing the inside of carpal tunnel, thus the area of cross section of carpal tunnel to be increased, the median nerve to be shifted to the palmar side and the median nerve to be compressed by the transverse carpal ligament at that time. Although we can observe these morphological changes readily in MRI images, these images show only the results of carpal tunnel syndrome after all, and do not specify the direct causes. However, we believe that these facts are important factors in the manifestation of idiopathic carpal tunnel syndrome. (author)

Josephson tunneling and nanosystems

OpenAIRE

Ovchinnikov, Yurii; Kresin, Vladimir

2010-01-01

Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.

Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

Science.gov (United States)

Vandenberghe, William G.; Fischetti, Massimo V.

2015-01-01

The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: DTA = 4.1 × 108 eV/cm, DTO = 1.2 × 109 eV/cm, and DLO = 2.2 × 109 eV/cm for BTBT in silicon and DTA = 7.8 × 108 eV/cm and DLO = 1.3 × 109 eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.

Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

2005-01-01

The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

Control of tunneling in heterostructures

International Nuclear Information System (INIS)

Volokhov, V M; Tovstun, C A; Ivlev, B

2007-01-01

A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

Electromagnetic wave analogue of electronic diode

OpenAIRE

Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

2010-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

A practical guide to handling laser diode beams

CERN Document Server

Sun, Haiyin

2015-01-01

This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

Tunnelling in Soft Soil : Tunnel Boring Machine Operation and Soil Response

NARCIS (Netherlands)

Festa, D.; Broere, W.; Bosch, J.W.

2013-01-01

Constructing tunnels in soft soil with the use of Tunnel Boring Machines may induce settlements including soil movements ahead of the face, soil relaxation into the tail void, possible heave due to grouting, long lasting consolidation processes, and potentially several other mechanisms. A

Seismic prediction ahead of tunnel constructions

Science.gov (United States)

Jetschny, S.; Bohlen, T.; Nil, D. D.; Giese, R.

2007-12-01

To increase safety and efficiency of tunnel constructions, online seismic exploration ahead of a tunnel can become a valuable tool. Within the \\it OnSite project founded by the BMBF (German Ministry of Education and Research) within \\it GeoTechnologien a new forward looking seismic imaging technique is developed to e.g. determine weak and water bearing zones ahead of the constructions. Our approach is based on the excitation and registration of \\it tunnel surface waves. These waves are excited at the tunnel face behind the cutter head of a tunnel boring machine and travel into drilling direction. Arriving at the front face they generate body waves (mainly S-waves) propagating further ahead. Reflected S-waves are back- converted into tunnel surface waves. For a theoretical description of the conversion process and for finding optimal acquisition geometries it is of importance to study the propagation characteristics of tunnel surface waves. 3D seismic finite difference modeling and analytic solutions of the wave equation in cylindric coordinates revealed that at higher frequencies, i.e. if the tunnel diameter is significantly larger than the wavelength of S-waves, these surface waves can be regarded as Rayleigh-waves circulating the tunnel. For smaller frequencies, i.e. when the S-wavelength approaches the tunnel diameter, the propagation characteristics of these surface waves are then similar to S- waves. Field measurements performed by the GeoForschungsZentrum Potsdam, Germany at the Gotthard Base Tunnel (Switzerland) show both effects, i.e. the propagation of Rayleigh- and body-wave like waves along the tunnel. To enhance our understanding of the excitation and propagation characteristics of tunnel surface waves the transition of Rayleigh to tube-waves waves is investigated both analytically and by numerical simulations.

Diode for providing X-rays

International Nuclear Information System (INIS)

Rix, W.H.; Shannon, J.P.

1991-01-01

This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end

Gap anisotropy and tunneling currents. [MPS3

DEFF Research Database (Denmark)

Lazarides, N.; Sørensen, Mads Peter

1996-01-01

The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

Science.gov (United States)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

Magnetic Fluxtube Tunneling

Science.gov (United States)

Dahlburg, Russell B.; Antiochos,, Spiro K.; Norton, D.

1996-01-01

We present numerical simulations of the collision and subsequent interaction of two initially orthogonal, twisted, force free field magnetic fluxtubes. The simulations were carried out using a new three dimensional explicit parallelized Fourier collocation algorithm for solving the viscoresistive equations of compressible magnetohydrodynamics. It is found that, under a wide range of conditions, the fluxtubes can 'tunnel' through each other. Two key conditions must be satisfied for tunneling to occur: the magnetic field must be highly twisted with a field line pitch much greater than 1, and the magnetic Lundquist number must be somewhat large, greater than or equal to 2880. This tunneling behavior has not been seen previously in studies of either vortex tube or magnetic fluxtube interactions. An examination of magnetic field lines shows that tunneling is due to a double reconnection mechanism. Initially orthogonal field lines reconnect at two specific locations, exchange interacting sections and 'pass' through each other. The implications of these results for solar and space plasmas are discussed.

Diode-Assisted Buck-Boost Voltage-Source Inverters

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

2009-01-01

, a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

Ion current reduction in pinched electron beam diodes

International Nuclear Information System (INIS)

Quintenz, J.P.; Poukey, J.W.

1977-01-01

A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

Science.gov (United States)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

Lowest order in inelastic tunneling approximation : efficient scheme for simulation of inelastic electron tunneling data

NARCIS (Netherlands)

Rossen, E.T.R.; Flipse, C.F.J.; Cerda, J.I.

2013-01-01

We have developed an efficient and accurate formalism which allows the simulation at the ab initio level of inelastic electron tunneling spectroscopy data under a scanning tunneling microscope setup. It exploits fully the tunneling regime by carrying out the structural optimization and vibrational

Scanning tunneling microscopic images and scanning tunneling spectra for coupled rectangular quantum corrals

International Nuclear Information System (INIS)

Mitsuoka, Shigenori; Tamura, Akira

2011-01-01

Assuming that an electron confined by double δ-function barriers lies in a quasi-stationary state, we derived eigenstates and eigenenergies of the electron. Such an electron has a complex eigenenergy, and the imaginary part naturally leads to the lifetime of the electron associated with tunneling through barriers. We applied this point of view to the electron confined in a rectangular quantum corral (QC) on a noble metal surface, and obtained scanning tunneling microscopic images and a scanning tunneling spectrum consistent with experimental ones. We investigated the electron states confined in coupled QCs and obtained the coupled states constructed with bonding and anti-bonding states. Using those energy levels and wavefunctions we specified scanning tunneling microscope (STM) images and scanning tunneling spectra (STS) for the doubly and triply coupled QCs. In addition we pointed out the feature of resonant electron states associated with the same QCs at both ends of the triply coupled QCs.

Ivar Giaever, Tunneling, and Superconductors

Science.gov (United States)

dropdown arrow Site Map A-Z Index Menu Synopsis Ivar Giaever, Tunneling, and Superconductors Resources with in Superconductors Measured by Electron Tunneling; Physical Review Letters, Vol. 5 Issue 4: 147 - 148 ; August 15, 1960 Electron Tunneling Between Two Superconductors; Physical Review Letters, Vol. 5 Issue 10

Physics of optimal resonant tunneling

NARCIS (Netherlands)

Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.

1997-01-01

The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

International Nuclear Information System (INIS)

Mohsennia, M.; Bidgoli, M. Massah; Boroumand, F. Akbari; Nia, A. Mohsen

2015-01-01

Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer

Submucosal tunneling techniques: current perspectives.

Science.gov (United States)

Kobara, Hideki; Mori, Hirohito; Rafiq, Kazi; Fujihara, Shintaro; Nishiyama, Noriko; Ayaki, Maki; Yachida, Tatsuo; Matsunaga, Tae; Tani, Johji; Miyoshi, Hisaaki; Yoneyama, Hirohito; Morishita, Asahiro; Oryu, Makoto; Iwama, Hisakazu; Masaki, Tsutomu

2014-01-01

Advances in endoscopic submucosal dissection include a submucosal tunneling technique, involving the introduction of tunnels into the submucosa. These tunnels permit safer offset entry into the peritoneal cavity for natural orifice transluminal endoscopic surgery. Technical advantages include the visual identification of the layers of the gut, blood vessels, and subepithelial tumors. The creation of a mucosal flap that minimizes air and fluid leakage into the extraluminal cavity can enhance the safety and efficacy of surgery. This submucosal tunneling technique was adapted for esophageal myotomy, culminating in its application to patients with achalasia. This method, known as per oral endoscopic myotomy, has opened up the new discipline of submucosal endoscopic surgery. Other clinical applications of the submucosal tunneling technique include its use in the removal of gastrointestinal subepithelial tumors and endomicroscopy for the diagnosis of functional and motility disorders. This review suggests that the submucosal tunneling technique, involving a mucosal safety flap, can have potential values for future endoscopic developments.

Ultrafast scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

1995-09-01

I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

The comparison between limited open carpal tunnel release using direct vision and tunneling technique and standard open carpal tunnel release: a randomized controlled trial study.

Science.gov (United States)

Suppaphol, Sorasak; Worathanarat, Patarawan; Kawinwongkovit, Viroj; Pittayawutwinit, Preecha

2012-04-01

To compare the operative outcome of carpal tunnel release between limited open carpal tunnel release using direct vision and tunneling technique (group A) with standard open carpal tunnel release (group B). Twenty-eight patients were enrolled in the present study. A single blind randomized control trial study was conducted to compare the postoperative results between group A and B. The study parameters were Levine's symptom severity and functional score, grip and pinch strength, and average two-point discrimination. The postoperative results between two groups were comparable with no statistical significance. Only grip strength at three months follow up was significantly greater in group A than in group B. The limited open carpal tunnel release in the present study is effective comparable to the standard open carpal tunnel release. The others advantage of this technique are better cosmesis and improvement in grip strength at the three months postoperative period.

13th Australian tunnelling conference. Proceedings

Energy Technology Data Exchange (ETDEWEB)

NONE

2008-07-01

The theme of the conference was 'Engineering in a changing environment'. Topics covered include Australian tunnelling projects, design and development of ground support, tunnelling, international projects, fire and life safety, mining projects, risk management in tunnelling, and tunnel boring machine tunnelling. Papers of particular interest to the coal industry are: improving roadway development in underground coal mine (G. Lewis and G. Gibson), and polymer-based alternative to steel mesh for coal mine strata reinforcement (C. Lukey and others).

Does flexible tunnel drilling affect the femoral tunnel angle measurement after anterior cruciate ligament reconstruction?

Science.gov (United States)

Muller, Bart; Hofbauer, Marcus; Atte, Akere; van Dijk, C Niek; Fu, Freddie H

2015-12-01

To quantify the mean difference in femoral tunnel angle (FTA) as measured on knee radiographs between rigid and flexible tunnel drilling after anatomic anterior cruciate ligament (ACL) reconstruction. Fifty consecutive patients that underwent primary anatomic ACL reconstruction with a single femoral tunnel drilled with a flexible reamer were included in this study. The control group was comprised of 50 patients all of who underwent primary anatomic ACL reconstruction with a single femoral tunnel drilled with a rigid reamer. All femoral tunnels were drilled through a medial portal to ensure anatomic tunnel placement. The FTA was determined from post-operative anterior-to-posterior (AP) radiographs by two independent observers. A 5° difference between the two mean FTA was considered clinically significant. The average FTA, when drilled with a rigid reamer, was 42.0° ± 7.2°. Drilling with a flexible reamer resulted in a mean FTA of 44.7° ± 7.0°. The mean difference of 2.7° was not statistically significant. The intraclass correlation coefficient for inter-tester reliability was 0.895. The FTA can be reliably determined from post-operative AP radiographs and provides a useful and reproducible metric for characterizing femoral tunnel position after both rigid and flexible femoral tunnel drilling. This has implications for post-operative evaluation and preoperative treatment planning for ACL revision surgery. IV.

Derivation of the tunnelling exchange time for the model of trap-assisted tunnelling

International Nuclear Information System (INIS)

Racko, J.; Ballo, P.; Benko, P.; Harmatha, L.; Grmanova, A.; Breza, J.

2014-01-01

We present derivation of the tunnelling exchange times that play the key role in the model of trap assisted tunnelling (TAT) considering the electron and hole exchange processes between the trapping centre lying in the forbidden band of the semiconductor and the conduction band, valence band or a metal. All exchange processes are quantitatively described by respective exchange times. The reciprocal values of these exchange times represent the frequency with which the exchange processes contribute to the probability of occupation of the trap by free charge carriers. The crucial problem in any model of TAT is the calculation of the occupation probability. In our approach this probability is expressed in terms of only thermal and tunnelling exchange times. The concept of tunnelling exchange times presents a dominant contribution to our model of TAT. The new approach allows to simply calculate the probability of occupation of the trapping centre by a free charge carrier and subsequently to get the thermal and tunnelling generation-recombination rates occurring in the continuity equations. This is why the TAT model based on thermal and tunnelling exchange times is suitable for simulating the electrical properties of semiconductor nanostructures in which quantum mechanical phenomena play a key role. (authors)

Electronic noise of superconducting tunnel junction detectors

International Nuclear Information System (INIS)

Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

1994-01-01

The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

Tunneling of Atoms, Nuclei and Molecules

International Nuclear Information System (INIS)

Bertulani, C.A.

2015-01-01

This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different barriers seen by subsystems, damping of resonant tunneling by level bunching and continuum effects due to particle dissociation. (author)

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Chaos regularization of quantum tunneling rates

International Nuclear Information System (INIS)

Pecora, Louis M.; Wu Dongho; Lee, Hoshik; Antonsen, Thomas; Lee, Ming-Jer; Ott, Edward

2011-01-01

Quantum tunneling rates through a barrier separating two-dimensional, symmetric, double-well potentials are shown to depend on the classical dynamics of the billiard trajectories in each well and, hence, on the shape of the wells. For shapes that lead to regular (integrable) classical dynamics the tunneling rates fluctuate greatly with eigenenergies of the states sometimes by over two orders of magnitude. Contrarily, shapes that lead to completely chaotic trajectories lead to tunneling rates whose fluctuations are greatly reduced, a phenomenon we call regularization of tunneling rates. We show that a random-plane-wave theory of tunneling accounts for the mean tunneling rates and the small fluctuation variances for the chaotic systems.

Excavation of the Surikamigawa dam diversion tunnel. Surikamigawa dam karihaisui tunnel kantsu

Energy Technology Data Exchange (ETDEWEB)

Ikeda, T.; Konno, T. (Ministry of Construction, Tokyo (Japan))

1994-04-01

A bypass tunnel construction has been completed at the Surikamigawa dam (Japan). This paper describes the summary of the construction. The full-swing dam construction work is scheduled to begin in 1995. The soils distributed near the dam site consist of lapillus tuff containing andesite-based light stones and tuff-based conglomerates containing large gravels. Excavation of the dam diversion tunnel has used a blasting method, and the tunnel construction has adopted an automatic tunnel cross section marking system and a non-electric explosion method. This marking system is a system to irradiate a laser beam onto the facing to depict excavation lines that realizes labor saving and high-accuracy excavation. The error at the tunnel completion was found 20 mm. The non-electric explosion method ignites a coated explosive layer with an impact wave, which is electrostatically safe, and reduces blasting vibration. Electric detonators have also been used because of using ANFO explosives. The result obtained from measurements of inner space displacement necessary for the blasting process has indicated that the area near the dam site consists of stable mountains. 6 figs., 4 tabs.

Charge Islands Through Tunneling

Science.gov (United States)

Robinson, Daryl C.

2002-01-01

It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

Tunneling progress on the Yucca Mountain Project

International Nuclear Information System (INIS)

Hansmire, W.H.; Munzer, R.J.

1996-01-01

The current status of tunneling progress on the Yucca Mountain Project (YMP) is presented in this paper. The Exploratory Studies Facility (ESF), a key part of the YMP, has been long in development and construction is ongoing. This is a progress report on the tunneling aspects of the ESF as of January 1, 1996. For purposes of discussion in this summary, the tunneling has progressed in four general phases. The paper describes: tunneling in jointed rock under low stress; tunneling through the Bow Ridge Fault and soft rock; tunneling through the Imbricate Fault Zone; and Tunneling into the candidate repository formation

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Science.gov (United States)

Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Yoshitomo; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

2017-09-01

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

Science.gov (United States)

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

Peak stresses shift from femoral tunnel aperture to tibial tunnel aperture in lateral tibial tunnel ACL reconstructions: a 3D graft-bending angle measurement and finite-element analysis.

Science.gov (United States)

Van Der Bracht, Hans; Tampere, Thomas; Beekman, Pieter; Schepens, Alexander; Devriendt, Wouter; Verdonk, Peter; Victor, Jan

2018-02-01

To investigate the effect of tibial tunnel orientation on graft-bending angle and stress distribution in the ACL graft. Eight cadaveric knees were scanned in extension, 45°, 90°, and full flexion. 3D reconstructions with anatomically placed anterior cruciate ligament (ACL) grafts were constructed with Mimics 14.12 ® . 3D graft-bending angles were measured for classic medial tibial tunnels (MTT) and lateral tibial tunnels (LTT) with different drill-guide angles (DGA) (45°, 55°, 65°, and 75°). A pivot shift was performed on 1 knee in a finite-element analysis. The peak stresses in the graft were calculated for eight different tibial tunnel orientations. In a classic anatomical ACL repair, the largest graft-bending angle and peak stresses are seen at the femoral tunnel aperture. The use of a different DGA at the tibial side does not change the graft-bending angle at the femoral side or magnitude of peak stresses significantly. When using LTT, the largest graft-bending angles and peak stresses are seen at the tibial tunnel aperture. In a classic anatomical ACL repair, peak stresses in the ACL graft are found at the femoral tunnel aperture. When an LTT is used, peak stresses are similar compared to classic ACL repairs, but the location of the peak stress will shift from the femoral tunnel aperture towards the tibial tunnel aperture. the risk of graft rupture is similar for both MTTs and LTTs, but the location of graft rupture changes from the femoral tunnel aperture towards the tibial tunnel aperture, respectively. I.

Hypersonic Tunnel Facility (HTF)

Data.gov (United States)

Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

Klein tunneling phenomenon with pair creation process

Science.gov (United States)

Wu, G. Z.; Zhou, C. T.; Fu, L. B.

2018-01-01

In this paper, we study the Klein tunneling phenomenon with electron-positron pair creation process. Pairs can be created from the vacuum by a supercritical single-well potential (for electrons). In the time region, the time-dependent growth pattern of the created pairs can be characterized by four distinct regimes which can be considered as four different statuses of the single well. We find that if positrons penetrate the single well by Klein tunneling in different statuses, the total number of the tunneling positrons will be different. If Klein tunneling begins at the initial stage of the first status i.e. when the sing well is empty, the tunneling process and the total number of tunneling positrons are similar to the traditional Klein tunneling case without considering the pair creation process. As the tunneling begins later, the total tunneling positron number increases. The number will finally settle to an asymptotic value when the tunneling begins later than the settling-down time t s of the single well which has been defined in this paper.

Tunneling time, what is its meaning?

International Nuclear Information System (INIS)

McDonald, C R; Orlando, G; Vampa, G; Brabec, T

2015-01-01

The tunnel time ionization dynamics for bound systems in laser fields are investigated. Numerical analysis for a step function switch-on of the field allows for the tunnel time to be defined as the time it takes the ground state to develop the under-barrier wavefunction components necessary to achieve the static field ionization rate. A relation between the tunnel time and the Keldysh time is established. The definition of the tunnel time is extended to time varying fields and experimental possibilities for measuring the tunnel time are discussed

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

Transonic Dynamics Tunnel (TDT)

Data.gov (United States)

Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

Microclump effects in magnetically-immersed electron diodes

International Nuclear Information System (INIS)

Olson, C.L.

1998-01-01

Magnetically-immersed electron diodes are being developed to produce needle-like, high-current, electron beams for radiography applications. An immersed diode consists of a needle cathode and a planar anode/bremmstrahlung converter which are both immersed in a strong solenoidal magnetic field (12--50 T); nominal parameters are 10 MV, 40 kA, 0.5 mm radius cathode, and 5--35 cm anode-cathode gaps. A physical picture of normal and abnormal diode behavior is emerging. Normal diode behavior occurs for times 0 ≤ t ≤ τ, where the transition time τ is typically 30 ns; during this time, bipolar space-charge limited flow occurs, which scales well to desired radiography parameters of high dose and small spot size. Abnormal diode behavior occurs for t ≥ τ, which results in substantial increases in spot size and current (impedance reduction). This abnormal behavior appears to be caused by an increase in ion charge in the gap, which may result from poor vacuum, impurity ions undergoing ion-ion stripping collisions during transit, or microclumps undergoing stripping collisions during transit. The potential effects of microclumps on diode behavior are reported here

Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs

OpenAIRE

Hakim, MMA; Haque, A

2002-01-01

We investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relative error in gate current due to neglecting carrier tunneling is higher at higher gate voltages and increases...

Road and Railroad Tunnels

Data.gov (United States)

Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

PUREX Storage Tunnels dangerous waste permit application

International Nuclear Information System (INIS)

1991-12-01

The PUREX Storage Tunnels are a mixed waste storage unit consisting of two underground railroad tunnels: Tunnel Number 1 designated 218-E-14 and Tunnel Number 2 designated 218-E-15. The two tunnels are connected by rail to the PUREX Plant and combine to provide storage space for 48 railroad cars (railcars). The PUREX Storage Tunnels provide a long-term storage location for equipment removed from the PUREX Plant. Transfers into the PUREX Storage Tunnels are made on an as-needed basis. Radioactively contaminated equipment is loaded on railcars and remotely transferred by rail into the PUREX Storage Tunnels. Railcars act as both a transport means and a storage platform for equipment placed into the tunnels. This report consists of part A and part B. Part A reports on amounts and locations of the mixed water. Part B permit application consists of the following: Facility Description and General Provisions; Waste Characteristics; Process Information; Groundwater Monitoring; Procedures to Prevent Hazards; Contingency Plan; Personnel Training; Exposure Information Report

Electron injection in diodes with field emission

International Nuclear Information System (INIS)

Denavit, J.; Strobel, G.L.

1986-01-01

This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

Numerical and machine learning simulation of parametric distributions of groundwater residence time in streams and wells

Science.gov (United States)

Starn, J. J.; Belitz, K.; Carlson, C.

2017-12-01

Groundwater residence-time distributions (RTDs) are critical for assessing susceptibility of water resources to contamination. This novel approach for estimating regional RTDs was to first simulate groundwater flow using existing regional digital data sets in 13 intermediate size watersheds (each an average of 7,000 square kilometers) that are representative of a wide range of glacial systems. RTDs were simulated with particle tracking. We refer to these models as "general models" because they are based on regional, as opposed to site-specific, digital data. Parametric RTDs were created from particle RTDs by fitting 1- and 2-component Weibull, gamma, and inverse Gaussian distributions, thus reducing a large number of particle travel times to 3 to 7 parameters (shape, location, and scale for each component plus a mixing fraction) for each modeled area. The scale parameter of these distributions is related to the mean exponential age; the shape parameter controls departure from the ideal exponential distribution and is partly a function of interaction with bedrock and with drainage density. Given the flexible shape and mathematical similarity of these distributions, any of them are potentially a good fit to particle RTDs. The 1-component gamma distribution provided a good fit to basin-wide particle RTDs. RTDs at monitoring wells and streams often have more complicated shapes than basin-wide RTDs, caused in part by heterogeneity in the model, and generally require 2-component distributions. A machine learning model was trained on the RTD parameters using features derived from regionally available watershed characteristics such as recharge rate, material thickness, and stream density. RTDs appeared to vary systematically across the landscape in relation to watershed features. This relation was used to produce maps of useful metrics with respect to risk-based thresholds, such as the time to first exceedance, time to maximum concentration, time above the threshold

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

Science.gov (United States)

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Cold cathode diode X-ray source

International Nuclear Information System (INIS)

Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

1983-01-01

A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

Cern DD4424 ROM Diode Matrix

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

A Diode Matrix model M792

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

Scanning tunneling microscopy

International Nuclear Information System (INIS)

Binnig, G.; Rohrer, H.

1983-01-01

Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

Scanning tunneling microscope nanoetching method

Science.gov (United States)

Li, Yun-Zhong; Reifenberger, Ronald G.; Andres, Ronald P.

1990-01-01

A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.

Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

Dirac particle tunneling from black rings

International Nuclear Information System (INIS)

Jiang Qingquan

2008-01-01

Recent research shows that Hawking radiation can be treated as a quantum tunneling process, and Hawking temperatures of Dirac particles across the horizon of a black hole can be correctly recovered via the fermion tunneling method. In this paper, motivated by the fermion tunneling method, we attempt to apply the analysis to derive Hawking radiation of Dirac particles via tunneling from black ring solutions of 5-dimensional Einstein-Maxwell-dilaton gravity theory. Finally, it is interesting to find that, as in the black hole case, fermion tunneling can also result in correct Hawking temperatures for the rotating neutral, dipole, and charged black rings.

Engineers win award for Swiss tunnel

CERN Multimedia

2003-01-01

A Derby engineering consultancy has won the Tunnelling Industry Award 2003 for Excellence in Tunnel Design, offered by the British Tunnelling Society, for its work on the LHC in Geneva, Switzerland (1/2 page).

Semiclassical description of resonant tunneling

International Nuclear Information System (INIS)

Bogomolny, E.B.; Rouben, D.C.

1996-01-01

A semiclassical formula is calculated for the tunneling current of electrons trapped in a potential well which can tunnel into and across a wide quantum well. The tunneling current is measured at the second interface of this well and the calculations idealized an experimental situation where a strong magnetic field tilted with respect to an electric field was used. It is shown that the contribution to the tunneling current, due to trajectories which begin at the first interface and end on the second, is dominant for periodic orbits which hit both walls of the quantum well. (author)

A Top Pilot Tunnel Preconditioning Method for the Prevention of Extremely Intense Rockbursts in Deep Tunnels Excavated by TBMs

Science.gov (United States)

Zhang, Chuanqing; Feng, Xiating; Zhou, Hui; Qiu, Shili; Wu, Wenping

2012-05-01

The headrace tunnels at the Jinping II Hydropower Station cross the Jinping Mountain with a maximum overburden depth of 2,525 m, where 80% of the strata along the tunnels consist of marble. A number of extremely intense rockbursts occurred during the excavation of the auxiliary tunnels and the drainage tunnel. In particular, a tunnel boring machine (TBM) was destroyed by an extremely intense rockburst in a 7.2-m-diameter drainage tunnel. Two of the four subsequent 12.4-m-diameter headrace tunnels will be excavated with larger size TBMs, where a high risk of extremely intense rockbursts exists. Herein, a top pilot tunnel preconditioning method is proposed to minimize this risk, in which a drilling and blasting method is first recommended for the top pilot tunnel excavation and support, and then the TBM excavation of the main tunnel is conducted. In order to evaluate the mechanical effectiveness of this method, numerical simulation analyses using the failure approaching index, energy release rate, and excess shear stress indices are carried out. Its construction feasibility is discussed as well. Moreover, a microseismic monitoring technique is used in the experimental tunnel section for the real-time monitoring of the microseismic activities of the rock mass in TBM excavation and for assessing the effect of the top pilot tunnel excavation in reducing the risk of rockbursts. This method is applied to two tunnel sections prone to extremely intense rockbursts and leads to a reduction in the risk of rockbursts in TBM excavation.

Tunneling Ionization of Diatomic Molecules

DEFF Research Database (Denmark)

Svensmark, Jens Søren Sieg

2016-01-01

When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... barriers, an ability classical particles do not possess. Tunnelling is a fundamental quantum mechanical process, a process that is distinctly non-classical, so solving this tunnelling problem is not only relevant for molecular physics, but also for quantum theory in general. In this dissertation the theory...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

Electromagnetic wave analogue of an electronic diode

International Nuclear Information System (INIS)

Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

2011-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2012-06-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

2012-01-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

International Nuclear Information System (INIS)

Dai, Jian-Qing

2016-01-01

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Diode laser pumping

International Nuclear Information System (INIS)

Skagerlund, L.E.

1975-01-01

A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

Plasma-filled diode based on the coaxial gun

Science.gov (United States)

Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Plasma-filled diode based on the coaxial gun.

Science.gov (United States)

Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Plasma-filled diode based on the coaxial gun

International Nuclear Information System (INIS)

Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

2012-01-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Few-photon optical diode

OpenAIRE

Roy, Dibyendu

2010-01-01

We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

Quantum tunneling with friction

Science.gov (United States)

Tokieda, M.; Hagino, K.

2017-05-01

Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

INCAS TRISONIC WIND TUNNEL

Directory of Open Access Journals (Sweden)

Florin MUNTEANU

2009-09-01

Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

In-mine (tunnel-to-tunnel) electrical resistance tomography in South African platinum mines

CSIR Research Space (South Africa)

Van Schoor, Abraham M

2009-12-01

Full Text Available The applicability of tunnel-to-tunnel electrical resistance tomography (ERT) for imaging disruptive geological structures ahead of mining, in an igneous platinum mining environment is assessed. The geophysical targets of interest are slump...

Developments in lead-salt diode lasers

International Nuclear Information System (INIS)

Partin, D.L.

1985-01-01

Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

Use of epitaxial silicon diodes in photon dosimetry

International Nuclear Information System (INIS)

Pereira, Lilian Nunes

2013-01-01

In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

Destructive quantum interference in spin tunneling problems

OpenAIRE

von Delft, Jan; Henley, Christopher L.

1992-01-01

In some spin tunneling problems, there are several different but symmetry-related tunneling paths that connect the same initial and final configurations. The topological phase factors of the corresponding tunneling amplitudes can lead to destructive interference between the different paths, so that the total tunneling amplitude is zero. In the study of tunneling between different ground state configurations of the Kagom\\'{e}-lattice quantum Heisenberg antiferromagnet, this occurs when the spi...

Diode Laser for Laryngeal Surgery: a Systematic Review.

Science.gov (United States)

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Snow and ice blocking of tunnels

Energy Technology Data Exchange (ETDEWEB)

Lia, Leif

1998-12-31

Hydroelectric power development in cold regions causes much concern about operational reliability and dam safety. This thesis studies the temperature distribution in tunnels by means of air temperature measurements in six tunnel spillways and five diversion tunnels. The measurements lasted for two consecutive winters. The air through flow tunnel is used as it causes cooling of both rock and water. In open spillway tunnels, frost reaches the entire tunnel. In spillway tunnels with walls, the frost zones reach about 100 m from the downstream end. In mildly-inclined diversion tunnels, a frost free zone is located in the middle of the tunnel and snow and ice problems were only observed in the inlet and outlet. Severe aufeis is accumulation is observed in the frost zones. The heat transfer from rock to air, water and ice is calculated and used in a prediction model for the calculation of aufeis build-up together with local field observation data. The water penetration of snow plugs is also calculated, based on the heat balance. It takes 20 to 50 days for water to enter the blocked tunnel. The empirical values are 30 to 60 days, but only 1 day if the temperature of the snow pack is 0{sup o}C. Sensitivity analyses are carried out for temperature variations in rock, snow, water and ice. Systematic field observation shows that it is important for hydropower companies to know about the effects of snow and ice blocking in an area. A risk analysis of dam safety is presented for a real case. Finally, the thesis proposes solutions which can reduce the snow and ice problems. 79 refs., 63 figs., 11 tabs.

Investigation of Corner Effect and Identification of Tunneling Regimes in L-Shaped Tunnel Field-Effect-Transistor.

Science.gov (United States)

Najam, Faraz; Yu, Yun Seop

2018-09-01

Corner-effect existing in L-shaped tunnel field-effect-transistor (LTFET) was investigated using numerical simulations and band diagram analysis. It was found that the corner-effect is caused by the convergence of electric field in the sharp source corner present in an LTFET, thereby increasing the electric field in the sharp source corner region. It was found that in the corner-effect region tunneling starts early, as a function of applied bias, as compared to the rest of the channel not affected by corner-effect. Further, different tunneling regimes as a function of applied bias were identified in the LTFET including source to channel and channel to channel tunneling regimes. Presence of different tunneling regimes in LTFET was analytically justified with a set of equations developed to model source to channel, and channel to channel tunneling currents. Drain-current-gate-voltage (Ids-Vgs) characteristics obtained from the equations is in reasonable qualitative agreement with numerical simulation.

Scanning Tunneling Optical Resonance Microscopy

Science.gov (United States)

Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

2003-01-01

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically tunneling current

Fiber coupled ultrafast scanning tunneling microscope

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1997-01-01

We report on a scanning tunneling microscope with a photoconductive gate in the tunneling current circuit. The tunneling tip is attached to a coplanar transmission line with an integrated photoconductive switch. The switch is illuminated through a fiber which is rigidly attached to the switch...... waveguide. The measurements show that the probe works as a transient voltage detector in contact and a capacitively coupled transient field detector in tunneling mode. We do not measure the transient voltage change in the ohmic tunneling current. In this sense, the spatial resolution for propagating...... substrate. By using a firmly attached fiber we achieve an excellent reproducibility and unconstrained positioning of the tip. We observe a transient signal with 2.9 ps pulse width in tunneling mode and 5 ps in contact mode. The instrument is applied to investigating the mode structure on a coplanar...

Experimental Evidence for Quantum Tunneling Time

Science.gov (United States)

Camus, Nicolas; Yakaboylu, Enderalp; Fechner, Lutz; Klaiber, Michael; Laux, Martin; Mi, Yonghao; Hatsagortsyan, Karen Z.; Pfeifer, Thomas; Keitel, Christoph H.; Moshammer, Robert

2017-07-01

The first hundred attoseconds of the electron dynamics during strong field tunneling ionization are investigated. We quantify theoretically how the electron's classical trajectories in the continuum emerge from the tunneling process and test the results with those achieved in parallel from attoclock measurements. An especially high sensitivity on the tunneling barrier is accomplished here by comparing the momentum distributions of two atomic species of slightly deviating atomic potentials (argon and krypton) being ionized under absolutely identical conditions with near-infrared laser pulses (1300 nm). The agreement between experiment and theory provides clear evidence for a nonzero tunneling time delay and a nonvanishing longitudinal momentum of the electron at the "tunnel exit."

Plasma-filled diode based on the coaxial gun

Energy Technology Data Exchange (ETDEWEB)

Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)

2012-10-15

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

Tunneling from the past horizon

Science.gov (United States)

Kang, Subeom; Yeom, Dong-han

2018-04-01

We investigate a tunneling and emission process of a thin-shell from a Schwarzschild black hole, where the shell was initially located beyond the Einstein-Rosen bridge and finally appears at the right side of the Penrose diagram. In order to obtain such a solution, we should assume that the areal radius of the black hole horizon increases after the tunneling. Hence, there is a parameter range such that the tunneling rate is exponentially enhanced, rather than suppressed. We may have two interpretations regarding this. First, such a tunneling process from the past horizon is improbable by physical reasons; second, such a tunneling is possible in principle, but in order to obtain a stable Einstein-Rosen bridge, one needs to restrict the parameter spaces. If such a process is allowed, this can be a nonperturbative contribution to Einstein-Rosen bridges as well as eternal black holes.

Analytic model of Applied-B ion diode impedance behavior

International Nuclear Information System (INIS)

Miller, P.A.; Mendel, C.W. Jr.

1987-01-01

An empirical analysis of impedance data from Applied-B ion diodes used in seven inertial confinement fusion research experiments was published recently. The diodes all operated with impedance values well below the Child's-law value. The analysis uncovered an unusual unifying relationship among data from the different experiments. The analysis suggested that closure of the anode-cathode gap by electrode plasma was not a dominant factor in the experiments, but was not able to elaborate the underlying physics. Here we present a new analytic model of Applied-B ion diodes coupled to accelerators. A critical feature of the diode model is based on magnetic insulation theory. The model successfully describes impedance behavior of these diodes and supports stimulating new viewpoints of the physics of Applied-B ion diode operation

Molecular series-tunneling junctions.

Science.gov (United States)

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Current transport mechanisms in mercury cadmium telluride diode

Energy Technology Data Exchange (ETDEWEB)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2016-08-28

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

Automated Boundary Conditions for Wind Tunnel Simulations

Science.gov (United States)

Carlson, Jan-Renee

2018-01-01

Computational fluid dynamic (CFD) simulations of models tested in wind tunnels require a high level of fidelity and accuracy particularly for the purposes of CFD validation efforts. Considerable effort is required to ensure the proper characterization of both the physical geometry of the wind tunnel and recreating the correct flow conditions inside the wind tunnel. The typical trial-and-error effort used for determining the boundary condition values for a particular tunnel configuration are time and computer resource intensive. This paper describes a method for calculating and updating the back pressure boundary condition in wind tunnel simulations by using a proportional-integral-derivative controller. The controller methodology and equations are discussed, and simulations using the controller to set a tunnel Mach number in the NASA Langley 14- by 22-Foot Subsonic Tunnel are demonstrated.

High-performance noncontact thermal diode via asymmetric nanostructures

Science.gov (United States)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

Compact laser-diode-based femtosecond sources

International Nuclear Information System (INIS)

Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

2004-01-01

This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

Proto-I switching and diode studies

International Nuclear Information System (INIS)

Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

1975-01-01

Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

Diode laser (980nm) cartilage reshaping

Science.gov (United States)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

FUNDAMENTAL TUNNELING PROCESSES IN MOSa SOLAR CELLS

OpenAIRE

Balberg , I.; Hanak , J.; Weakliem , H.; Gal , E.

1981-01-01

In previous studies of tunneling through a MOSa tunnel junction, where Sa was a-Si : H, it was shown that their characteristics resemble those of MOSc devices where Sc was crystalline silicon. In the present work we would like to report a demonstration of fundamental tunneling processes in such tunnel junctions. In particular, the transition from semiconductor controlled regime to tunneling controlled regime can be clearly distinguished. The present results represent one of the rare cases whe...

Thermic diode performance characteristics and design manual

Science.gov (United States)

Bernard, D. E.; Buckley, S.

1979-01-01

Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

Distribution of tunnelling times for quantum electron transport

International Nuclear Information System (INIS)

Rudge, Samuel L.; Kosov, Daniel S.

2016-01-01

In electron transport, the tunnelling time is the time taken for an electron to tunnel out of a system after it has tunnelled in. We define the tunnelling time distribution for quantum processes in a dissipative environment and develop a practical approach for calculating it, where the environment is described by the general Markovian master equation. We illustrate the theory by using the rate equation to compute the tunnelling time distribution for electron transport through a molecular junction. The tunnelling time distribution is exponential, which indicates that Markovian quantum tunnelling is a Poissonian statistical process. The tunnelling time distribution is used not only to study the quantum statistics of tunnelling along the average electric current but also to analyse extreme quantum events where an electron jumps against the applied voltage bias. The average tunnelling time shows distinctly different temperature dependence for p- and n-type molecular junctions and therefore provides a sensitive tool to probe the alignment of molecular orbitals relative to the electrode Fermi energy.

Experience with RTD response time testing in nuclear power plants

International Nuclear Information System (INIS)

Hashemian, H.M.; Kerlin, T.W.

1985-01-01

The reactor coolant temperatures in pressurized water reactors are measured with platinum resistance temperature detectors (RTDs). The information furnished by these RTDs is used for plant protection as well as control. As a part of the plant protection system, the RTDs must respond to temperature changes in a timely fashion. The RTD response time requirements are different for the various plant types. These requirements are specified in the plant technical specifications in terms of an RTd time constant. The current time constant requirements for nuclear plant RTDs varies from 0.5 seconds to 13.0 seconds depending on the type of the plant. Therefore, different types of RTDs are used in different plants to achieve the required time constants. In addition, in-situ response time tests are periodically performed on protective system RTDs to ensure that the in-service time constants are within acceptable limits as the plant is operating. The periodic testing is important because response time degradation may occur while the RTD ages in the process. Recent response time tests in operating plants revealed unacceptable time constants for several protection system RTDs. As a result, these plants had to be shut down to resolve the problem which in one case was due to improper installation and in another case was because of degradation of a thermal compound used in the thermowell

Een systeem voor classificatie van korte tunnels.

NARCIS (Netherlands)

Schreuder, D.A.

1985-01-01

The most difficult problems in the lighting of tunnels occur in daylight and in particular in the entrance of the tunnel, while drivers approaching the tunnel must be able to look into the tunnel from the outside to detect the road course and eventual obstacles. A classification should The made on

Effects of the finite duration of quantum tunneling in laser-assisted scanning tunneling microscopy

International Nuclear Information System (INIS)

Hagmann, M.J.

1994-01-01

Previous measurements of tunnel conductance in heterostructures and experiments with Josephson junctions suggest quantum tunneling has a definite duration. The authors use semiclassical methods to determine the effects of this delay on the tunneling current in a laser-assisted STM. A planar-planar STM model is used with the exact multiple image potential, and the energy distribution for a free-electron metal. It is necessary to average over the phase at barrier entry, and iteration with back propagated solutions is required to obtain the transmission coefficients for evenly spaced phases and specified energies at barrier entry. The simulations suggest that the dependence of the tunneling current on the wavelength of illumination can serve as a basis for determining the duration of barrier traversal. A power flux density of 10 11 W/m 2 would be required at several wavelengths from 1 to 10 μm. It is possible that thermal effects could be separated from the modeled phenomena by determining the time dependence of the tunneling current with a pulsed laser

Wavelength stabilized multi-kW diode laser systems

Science.gov (United States)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Proceedings of the meeting on tunneling reaction and low temperature chemistry, 98 August. Tunneling reaction and its theory

Energy Technology Data Exchange (ETDEWEB)

Miyazaki, Tetsuo; Aratono, Yasuyuki; Ichikawa, Tsuneki; Shiotani, Masaru [eds.

1998-10-01

Present report is the proceedings of the 4th Meeting on Tunneling Reaction and Low Temperature Chemistry held in August 3 and 4, 1998. The main subject of the meeting is `Tunneling Reaction and Its Theory`. In the present meeting the theoretical aspects of tunneling phenomena in the chemical reaction were discussed intensively as the main topics. Ten reports were presented on the quantum diffusion of muon and proton in the metal and H{sub 2}{sup -} anion in the solid para-hydrogen, the theory of tunnel effect in the nuclear reaction and the tunneling reaction in the organic compounds. One special lecture was presented by Prof. J. Kondo on `Proton Tunneling in Solids`. The 11 of the presented papers are indexed individually. (J.P.N.)

Pressure-Sensitive Paint Measurements on the NASA Common Research Model in the NASA 11-ft Transonic Wind Tunnel

Science.gov (United States)

Bell, James H.

2011-01-01

The luminescence lifetime technique was used to make pressure-sensitive paint (PSP) measurements on a 2.7% Common Research Model in the NASA Ames 11ft Transonic Wind Tunnel. PSP data were obtained on the upper and lower surfaces of the wing and horizontal tail, as well as one side of the fuselage. Data were taken for several model attitudes of interest at Mach numbers between 0.70 and 0.87. Image data were mapped onto a three-dimensional surface grid suitable both for comparison with CFD and for integration of pressures to determine loads. Luminescence lifetime measurements were made using strobed LED (light-emitting diode) lamps to illuminate the PSP and fast-framing interline transfer cameras to acquire the PSP emission.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

Science.gov (United States)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Diode Laser Application in Soft Tissue Oral Surgery

Science.gov (United States)

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

Science.gov (United States)

Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S; Saeys, Mark; Yang, Hyunsoo

2014-09-30

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

OpenAIRE

Sajjad, Redwan N.; Chern, Winston; Hoyt, Judy L.; Antoniadis, Dimitri A.

2016-01-01

We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall formalism, we show that at room temperature, the phonon assisted TAT current always dominates and obscures the steep turn ON of the BTBT current for common densities of traps. Our results are applicable to top gate, double gate and...

78 FR 46117 - National Tunnel Inspection Standards

Science.gov (United States)

2013-07-30

... busiest vehicular tunnel in the world. The Fort McHenry Tunnel handles a daily traffic volume of more than... vehicular, transit, and rail tunnels in the New York City metropolitan area. Although it is still too early... congestion along alternative routes, and save users both dollars and fuel. If these tunnels were closed due...

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2016-08-21

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Tunnel nitrogen spill experiment

International Nuclear Information System (INIS)

Ageyev, A.I.; Alferov, V.N.; Mulholland, G.T.

1983-01-01

The Energy Saver Safety Analysis Report (SAR) found the tunnel oxygen deficiency considerations emphasized helium spills. These reports concluded the helium quickly warms and because of its low denisty, rises to the apex of the tunnel. The oxygen content below the apex and in all but the immediate vicinity of the helium spill is essentially unchanged and guarantees an undisturbed source of oxygen especially important to fallen personnel. In contrast nitrogen spills warm slower than helium due to the ratio of the enthalpy changes per unit volume spilled spread more uniformly across the tunnel cross-section when warmed because of the much smaller density difference with air, and generally provides a greater hazard than helium spills as a result. In particular there was concern that personnel that might fall to the floor for oxygen deficiency or other reasons might find less, and not more, oxygen with dire consequences. The SAR concluded tunnel nitrogen spills were under-investigated and led to this work