Study of the structural evolutions of crystalline tungsten oxide films prepared using hot-filament CVD

International Nuclear Information System (INIS)

Feng, P X; Wang, X P; Zhang, H X; Yang, B Q; Wang, Z B; Gonzalez-BerrIos, A; Morell, G; Weiner, B

2007-01-01

Structural evolutions of tungsten oxide(WO 3 ) samples on different substrates are studied using Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy. The WO 3 samples are prepared using hot-filament CVD techniques. The focus of the study is on the evolutions of nano structures at different stages following deposition time. The experimental measurements reveal evolutions of the surface structures from uniform film to fractal-like structures, and eventually to nano particles, and crystalline structures from mono (0 1 0) crystalline thin film to polycrystalline thick film developments. The effect of high temperature on the nanostructured WO 3 is also investigated. Well-aligned nanoscale WO 3 rod arrays are obtained at a substrate temperature of up to 1400 deg. C. Further increasing the substrate temperature yields microscale crystalline WO 3 particles

Tungsten oxide-Au nanosized film composites for glucose oxidation and sensing in neutral medium

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Gougis M

2015-04-01

Full Text Available Maxime Gougis, Dongling Ma, Mohamed Mohamedi INRS-Énergie, Matériaux et Télécommunications, Varennes, Québec, Canada Abstract: In this work, we report for the first time the use of tungsten oxide (WOx as catalyst support for Au toward the direct electrooxidation of glucose. The nanostructured WOx/Au electrodes were synthesized by means of laser-ablation technique. Both micro-Raman spectroscopy and transmission electron microscopy showed that the produced WOx thin film is amorphous and made of ultrafine particles of subnanometer size. X-ray diffraction and X-ray photoelectron spectroscopy revealed that only metallic Au was present at the surface of the WOx/Au composite, suggesting that the WOx support did not alter the electronic structure of Au. The direct electrocatalytic oxidation of glucose in neutral medium such as phosphate buffered saline (pH 7.2 solution has been investigated with cyclic voltammetry, chronoamperometry, and square-wave voltammetry. Sensitivity as high as 65.7 µA cm-2 mM-1 up to 10 mM of glucose and a low detection limit of 10 µM were obtained with square-wave voltammetry. This interesting analytical performance makes the laser-fabricated WOx/Au electrode potentially promising for implantable glucose fuel cells and biomedical analysis as the evaluation of glucose concentration in biological fluids. Finally, owing to its unique capabilities proven in this work, it is anticipated that the laser-ablation technique will develop as a fabrication tool for chip miniature-sized sensors in the near future. Keywords: Au, tungsten oxide, nanostructures, pulsed laser deposition, glucose oxidation and sensing

Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

International Nuclear Information System (INIS)

Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

2016-01-01

Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

Electrical transport properties of nanoplates shaped tungsten oxide embedded poly(vinyl-alcohol) film

Science.gov (United States)

Das, Amit Kumar; Chatterjee, Piyali; Meikap, Ajit Kumar

2018-04-01

Tungsten oxide (WO3) nanoplates have been synthesized via hydrothermal method. The average crystallite size of the nanoplates is 28.9 ± 0.5 nm. The direct and indirect band gap of WO3 is observed. The AC conductivity of PVA-WO3 composite film has been observed and carrier transport mechanism follows correlated barrier hopping model. The maximum barrier height of the composite film is 0.1 eV. The electric modulus reflects the non-Debye type behaviour of relaxation time which is simulated by Kohlrausch-Willims-Watts (KWW) function.

Electrochemistry of hydrous oxide films

International Nuclear Information System (INIS)

Burke, L.D.; Lyons, M.E.G.

1986-01-01

The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

Surface studies of barium and barium oxide on tungsten and its application to understanding the mechanism of operation of an impregnated tungsten cathode

Science.gov (United States)

Forman, R.

1976-01-01

Surface studies have been made of multilayer and monolayer films of barium and barium oxide on a tungsten substrate. The purpose of the investigation was to synthesize the surface conditions that exist on an activated impregnated tungsten cathode and obtain a better understanding of the mechanism of operation of such cathodes. The techniques employed in these measurements were Auger spectroscopy and work-function measurements. The results of this study show that the surface of an impregnated cathode is identical to that observed for a synthesized monolayer or partial monolayer of barium on oxidized tungsten by evaluating Auger spectra and work-function measurements. Data obtained from desorption studies of barium monolayers on a tungsten substrate in conjunction with Auger and work-function results have been interpreted to show that throughout most of its life an impreganated cathode has a partial monolayer, rather than a monolayer, of barium on its surface.

The correlations of electrochromism and thermochromism of tungsten oxide films studied by slow positron beam

International Nuclear Information System (INIS)

Ma Chuangxin; Zhou Chunlan; Zhang Zhiming; Wang Baoyi; Wei Long

2004-01-01

Electrochromic (EC) and thermochromic (TC) tungsten oxide (WO 3 ) films, deposited by magnetron sputtering and vacuum thermal evaporation, were studied systematically by means of slow positron measurements. The S parameters of colored amorphous WO 3 film and crystalline WO 3 film behaved quite similarly in the processes of thermochromism and electrochromism, little influenced by the different deposition methods. It indicates that the coloration processes under various external conditions are correlated with each other. It also shows that the slow positron beam technique may play a particular role in the study of chromogenic materials. (orig.)

Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

2012-07-01

We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

2008-01-01

Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

International Nuclear Information System (INIS)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

2014-01-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Effects of thermal treatment on the anodic growth of tungsten oxide films

Energy Technology Data Exchange (ETDEWEB)

Chai, Y., E-mail: yqchai85@gmail.com; Tam, C.W.; Beh, K.P.; Yam, F.K.; Hassan, Z.

2015-08-03

This work reports the investigation of the effects of thermal treatment on anodic growth tungsten oxide (WO{sub 3}). The increase of the thermal treatment temperature above 400 °C significantly influences WO{sub 3} film where high porosity structure reduces to more compact film. As-grown film is amorphous, which transforms to monoclinic/orthorhombic phase upon annealing at 300–600 °C. With the reducing of porous structure, preferential growth of (002) plane shifts to (020) plane at 600 °C with more than twentyfold increase of peak's intensity compared to the film annealed at 500 °C. Films annealed at low thermal treatment show better ion intercalation and reversibility during electrochemical measurements; however, it has larger optical band gap. Photoelectrochemical measurement reveals that film annealed at 400 °C exhibits the best photocatalytic performance among the films annealed at 300–600 °C. - Highlights: • Porosity of the WO{sub 3} reduces as annealing temperature increases above 400 °C. • As-grown film is amorphous which transforms to monoclinic/orthorhombic upon annealing. • As-grown film shows better ion intercalation in electrochemical process. • Optical band gap of WO{sub 3} reduces as the annealing temperature increases. • Film annealed at 400 °C exhibits best photocatalytic performance.

Controlled nanostructuration of polycrystalline tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

2013-05-07

Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

Tungsten oxide (WO3) thin films for application in advanced energy systems

International Nuclear Information System (INIS)

Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

2010-01-01

Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H 2 S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO 3 ) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO 3 films for H 2 S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO 3 thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO 3 films. XRD and SEM results indicate that the WO 3 films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO 3 films exhibit smooth morphology at growth temperatures ≤300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO 3 films grown at 100-300 deg. C could be the potential candidates for H 2 S sensor development for application in coal gasification systems.

Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

CERN Document Server

Sidhwa, A; Gandy, T; Melosky, S; Brown, W; Ang, S; Naseem, H; Ulrich, R

2002-01-01

The effects of residual by products from a tungsten film deposition process and their impact on process integration due to the nonuniformity of the tungsten film were investigated in this work. The tungsten film deposition process involves three steps: nucleation, stabilization, and tungsten bulk fill. Six experiments were conducted in search for a solution to the problem. The resulting data suggest that excess nitrogen left in the chamber following the tungsten nucleation step, along with residual by products, causes a shift in the tungsten film uniformity during the tungsten bulk fill process. Data reveal that, due to the residual by products, an abnormal grain growth occurs causing a variation in the tungsten thickness across the wafer during the bulk fill step. Although several possible solutions were revealed by the experiments, potential integration problems limited the acceptable solutions to one. The solution chosen was the introduction of a 10 s pumpdown immediately following the nucleation step. Thi...

Field-emission properties of transparent tungsten oxide nano-urchins

Energy Technology Data Exchange (ETDEWEB)

Kim, Do-Hyung [Kyungpook National University, Nano-applied Physics Laboratory, Department of Physics, Daegu (Korea, Republic of)

2012-09-15

The field-emission properties of transparent tungsten oxide nano-urchin (NU) films deposited on conducting glass substrates were examined. The novel crystalline tungsten oxide NUs consisted of nanowires added to a spherical shell. The WO{sub 2.72} NUs showed better field-emission properties than the WO{sub 3} NUs with a low turn-on field of approximately 5.8 V/{mu}m and a current density as high as 1.3 mA/cm{sup 2} at 7.2 V/mm. The WO{sub x} NUs films could be used in FE applications using a large-area glass substrate without the need for a catalyst and a mechanical rubbing or lift-up process. These results have implications for the enhancement of FE properties by further tuning the WO{sub x} phases. (orig.)

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Science.gov (United States)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Color in 'tungsten trioxide' thin films

International Nuclear Information System (INIS)

Gerard, P.; Deneuville, A.; Hollinger, G.; Duc, Tran Minh

1977-01-01

We show that evaporated tungsten trioxide amorphous layers commonly used in electrochromic displays actually have the composition WO_2_._7H_y (0.2< y<0.5). We emphasize that coloration of virgin transparent films can be obtained without injection of any external ion into the layer, and further that around a critical substoichiometry by sputtering, namely, WO_2_._5, one can prepare blue virgin layers without any hydrogen. The effect of substoichiometry on the valence of tungsten atoms has been followed by XPS measurements of sputtered layers.

Color in ''tungsten trioxide'' thin films

International Nuclear Information System (INIS)

Gerard, P.; Deneuville, A.; Hollinger, G.; Tran Minh Duc

1977-01-01

We show that evaporated tungsten trioxide amorphous layers commonly used in electrochromic displays actually have the composition WO/sub 2.7/H/sub y/ (0.2< y<0.5). We emphasize that coloration of virgin transparent films can be obtained without injection of any external ion into the layer, and further that around a critical substoichiometry by sputtering, namely, WO/sub 2.5/, one can prepare blue virgin layers without any hydrogen. The effect of substoichiometry on the valence of tungsten atoms has been followed by XPS measurements of sputtered layers

Optical and structural characterization of nickel oxide-based thin films obtained by chemical bath deposition

International Nuclear Information System (INIS)

Vidales-Hurtado, M.A.; Mendoza-Galvan, A.

2008-01-01

Nickel oxide-based thin films were obtained using the chemical bath deposition method on glass and silicon substrates. The precursor solution used was a mixture of nickel nitrate, urea, and deionized water. Molar concentration of nickel (0.3-1.0 M), deposition time, and immersing cycles were considered as deposition variables. Infrared spectroscopy and X-ray diffraction data reveal that all as-deposited films correspond to the transparent turbostratic phase α(II)-Ni(OH) 2 . However, the rate of deposition depends on nickel content in the solution. After annealing in air at temperatures above of 300 deg. C, the films are transformed to the NiO phase and show a grey/black color. In these films, scanning electron microscopy images show aggregates of thin stacked sheets on their surface, such aggregates can be easily removed leaving only a thin NiO layer of about 30 nm adhered firmly to the substrate, regardless of nickel concentration in the solution and deposition time. In order to obtain thicker NiO films with good optical properties a procedure is developed performing several immersing-annealing cycles

Impedance measurements on oxide films on aluminium obtained by pulsed tensions

Energy Technology Data Exchange (ETDEWEB)

Belmokre, K. [Lab. of Applied Chemical, Dept. of Chemie, Skikda University, BP 26 - 21000 Skikda (Algeria); Azzouz, N. [Dept. of Industrial Chemie, Jijel University Center, 18000 Jijel (Algeria); Hannani, A. [Lab. Electrochem. Corros. Institute of Chemical USTHB Alger (Algeria); Pagetti, J. [Lab. LCMI, Franche-Comte - University UFR Sciences and Technical 16, Gray street - 25030 Besancon Cedex (France)

2003-01-01

We have performed this study on oxide films sealed or not in boiling water. The films are first obtained on type 1050 A aluminium substrate by pulsed tensions anodizing technique, in a sulfuric acid solution. Afterwards the, Electrochemical Impedance Spectroscopy (EIS) is employed to appreciate the films behaviour in a neutral solution of 3.5% K{sub 2}SO{sub 4}, in which the interface processes interest only the ageing phenomenon of the oxide films and not their corrosion. We have also attempted a correlation between pulse parameters of anodization and the electrical parameters characterizing these films. The sealing influence on ageing has been studied as well. For all films, ageing is appreciated using impedance diagrams evolution versus time. The results show: - the existence of two capacitive loops confirming the presence of two oxide layers characteristic of oxide films obtained in a sulfuric acid medium. The first loop, at high frequencies, is related to the external porous layer and the second one, at lower frequencies, is related to the internal barrier layer. - the thickness of the barrier layer varies between 25 and 40 nm in relation with the electrical pulse parameters. - the sealing acts favorably against anodic oxide films ageing. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Electrical properties of tungsten trioxide films

International Nuclear Information System (INIS)

Xu, Z.; Vetelino, J.F.; Lec, R.; Parker, D.C.

1990-01-01

Selectively doped semiconducting metal oxide (SMO) films have been shown to have applications as the sensing element in gas microsensors. Critical to the design and operation of these sensors is the SMO film. In the present work, the electrical properties of both intrinsic and extrinsic (doped with gold) tungsten trioxide (WO 3 ) films, which selectively sorb hydrogen sulfide (H 2 S), are investigated. Hall effect measurements are performed as a function of film thickness, temperature, gold-doping concentration, and H 2 S gas concentration. The conductivity was found to be n type and strongly dependent on temperature, gold doping concentration, and H 2 S gas concentration and less dependent on film thickness. The mobility was relatively high while the intrinsic carrier concentration was low when compared to typical semiconductor materials. The conductivity was shown to exhibit anomalous behavior at certain temperatures and H 2 S gas concentrations

Mesoporous amorphous tungsten oxide electrochromic films: a Raman analysis of their good switching behavior

International Nuclear Information System (INIS)

Chatzikyriakou, Dafni; Krins, Natacha; Gilbert, Bernard; Colson, Pierre; Dewalque, Jennifer; Denayer, Jessica; Cloots, Rudi; Henrist, Catherine

2014-01-01

Graphical abstract: - Highlights: • Mesoporous films exhibit better electrochemical kinetics compared to the dense films. • Mesoporous films exhibit better reversibility compared to the dense films. • Li + cations disrupt WO 3 network in a reversible way in the mesoporous film. • Li + irreversibly intercalate in the voids of crystallites in the dense film. - Abstract: The intercalation and de-intercalation of lithium cations in electrochromic tungsten oxide thin films are significantly influenced by their structural and surface characteristics. In this study, we prepared two types of amorphous films via the sol-gel technique: one dense and one mesoporous in order to compare their response upon lithium intercalation and de-intercalation. According to chronoamperometric measurements, Li + intercalates/de-intercalates faster in the mesoporous film (24s/6s) than in the dense film (48s/10s). The electrochemical measurements (cyclic voltammetry and chronoamperometry) also showed worse reversibility for the dense film compared to the mesoporous film, giving rise to important Li + trapping and remaining coloration of the film. Raman analysis showed that the mesoporous film provides more accessible and various W-O surface bonds for Li + intercalation. On the contrary, in the first electrochemical insertion and de-insertion in the dense film, Li + selectively reacts with a few surface W-O bonds and preferentially intercalates into pre-existing crystallites to form stable irreversible Li x WO 3 bronze

Recent progress in tungsten oxides based memristors and their neuromorphological applications

Science.gov (United States)

Qu, Bo; Younis, Adnan; Chu, Dewei

2016-09-01

The advance in conventional silicon based semiconductor industry is now becoming indeterminacy as it still along the road of Moore's Law and concomitant problems associated with it are the emergence of a number of practical issues such as short channel effect. In terms of memory applications, it is generally believed that transistors based memory devices will approach to their scaling limits up to 2018. Therefore, one of the most prominent challenges today in semiconductor industry is the need of a new memory technology which is able to combine the best characterises of current devices. The resistive switching memories which are regarded as "memristors" thus gain great attentions thanks to their specific nonlinear electrical properties. More importantly, their behaviour resembles with the transmission characteristic of synapse in biology. Therefore, the research of synapses biomimetic devices based on memristor will certainly bring a great research prospect in studying synapse emulation as well as building artificial neural networks. Tungsten oxides (WO x ) exhibits many essential characteristics as a great candidate for memristive devices including: accredited endurance (over 105 cycles), stoichiometric flexibility, complimentary metal-oxide-semiconductor (CMOS) process compatibility and configurable properties including non-volatile rectification, memorization and learning functions. Herein, recent progress on Tungsten oxide based materials and its associating memory devices had been reviewed. The possible implementation of this material as a bio-inspired artificial synapse is also highlighted. The penultimate section summaries the current research progress for tungsten oxide based biological synapses and end up with several proposals that have been suggested for possible future developments.

Reduction of blue tungsten oxide

International Nuclear Information System (INIS)

Wilken, T.; Wert, C.; Woodhouse, J.; Morcom, W.

1975-01-01

A significant portion of commercial tungsten is produced by hydrogen reduction of oxides. Although several modes of reduction are possible, hydrogen reduction is used where high purity tungsten is required and where the addition of other elements or compounds is desired for modification of the metal, as is done for filaments in the lamp industry. Although several investigations of the reduction of oxides have been reported (1 to 5), few principles have been developed which can aid in assessment of current commercial practice. The reduction process was examined under conditions approximating commercial practice. The specific objectives were to determine the effects of dopants, of water vapor in the reducing atmosphere, and of reduction temperature upon: (1) the rate of the reaction by which blue tungsten oxide is reduced to tungsten metal, (2) the intermediate oxides associated with reduction, and (3) the morphology of the resulting tungsten powder

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Science.gov (United States)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Influence of annealing temperature on microstructure and optical properties of sol-gel derived tungsten oxide films

International Nuclear Information System (INIS)

Sun Xilian; Cao Hongtao; Liu Zhimin; Li Jianzhong

2009-01-01

Tungsten oxide (WO 3 ) thin films have been extensively studied for their interesting physical properties and a variety of potential applications in electrochromic devices. In order to explore the possibility of using these in electrochromic devices, a preliminary and thorough study of the optical properties of the host materials is an important step. Based on this, the influence of annealing temperature on the structural, surface morphological, optical and electrochromic properties has been investigated in the present work. The host material, WO 3 films, has been prepared from an ethanolic acetylated peroxotungstic acid sol containing 5 wt.% oxalic acid dehydrate (OAD) by sol-gel technique. The monoclinic structure and textured nature change of the films with the temperature increasing have been investigated by X-ray diffraction analysis. The surface morphology evolution of the films has been characterized by SEM. The shift in absorption edge towards the higher wavelength region observed from optical studies may be due to the electron scattering effects and the optical band filling effect that reveals the crystallization of the film. The amorphous film shows better optical modulation (ΔT = 76.9% at λ = 610 nm), fast color-bleach kinetics (t c ∼ 4 s and t b ∼ 9 s) and good reversibility (Q b /Q c = 90%), thereby rendering it suitable for smart window applications.

Tribology of carbide derived carbon films synthesized on tungsten carbide

Science.gov (United States)

Tlustochowicz, Marcin

Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

Directory of Open Access Journals (Sweden)

Ting Xie

2018-05-01

Full Text Available Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

Directory of Open Access Journals (Sweden)

Franklin Che

Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

NARCIS (Netherlands)

Yan, L.T.; Schropp, R.E.I.

2011-01-01

Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Spin coated versus dip coated electrochromic tungsten oxide films: Structure, morphology, optical and electrochemical properties

International Nuclear Information System (INIS)

Deepa, M.; Saxena, T.K.; Singh, D.P.; Sood, K.N.; Agnihotry, S.A.

2006-01-01

A sol-gel derived acetylated peroxotungstic acid sol encompassing 4 wt.% of oxalic acid dihydrate (OAD) has been employed for the deposition of tungsten oxide (WO 3 ) films by spin coating and dip coating techniques, in view of smart window applications. The morphological and structural evolution of the as-deposited spin and dip coated films as a function of annealing temperature (250 and 500 o C) has been examined and compared by Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). A conspicuous feature of the dip coated film (annealed at 250 o C) is that its electrochromic and electrochemical properties ameliorate with cycling without degradation in contrast to the spin coated film for which these properties deteriorate under repetitive cycling. A comparative study of spin and dip coated nanostructured thin films (annealed at 250 o C) revealed a superior performance for the cycled dip coated film in terms of higher transmission modulation and coloration efficiency in solar and photopic regions, faster switching speed, higher electrochemical activity as well as charge storage capacity. While the dip coated film could endure 2500 color-bleach cycles, the spin coated film could sustain only a 1000 cycles. The better cycling stability of the dip coated film which is a repercussion of a balance between optimal water content, porosity and grain size hints at its potential for electrochromic window applications

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

2009-01-15

Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

Tungsten oxide nanowires grown on graphene oxide sheets as high-performance electrochromic material

International Nuclear Information System (INIS)

Chang, Xueting; Sun, Shibin; Dong, Lihua; Hu, Xiong; Yin, Yansheng

2014-01-01

Graphical abstract: Electrochromic mechanism of tungsten oxide nanowires-reduced graphene oxide composite. - Highlights: • A novel inorganic-nano-carbon hybrid composite was prepared. • The hybrid composite has sandwich-like structure. • The hybrid composite exhibited high-quality electrohcromic performance. - Abstract: In this work, we report the synthesis of a novel hybrid electrochromic composite through nucleation and growth of ultrathin tungsten oxide nanowires on graphene oxide sheets using a facile solvothermal route. The competition between the growth of tungsten oxide nanowires and the reduction of graphene oxide sheets leads to the formation of sandwich-structured tungsten oxide-reduced graphene oxide composite. Due to the strongly coupled effect between the ultrathin tungsten oxide nanowires and the reduced graphene oxide nanosheets, the novel electrochromic composite exhibited high-quality electrochromic performance with fast color-switching speed, good cyclic stability, and high coloration efficiency. The present tungsten oxide-reduced graphene oxide composite represents a new approach to prepare other inorganic-reduced graphene oxide hybrid materials for electrochemical applications

Growth study and photocatalytic properties of Co-doped tungsten oxide mesocrystals

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2012-01-01

Cobalt-doped tungsten oxide mesocrystals with different morphologies have been successfully generated using a solvothermal method with tungsten hexachloride and cobalt chloride salts as precursors. The resulting mesocrystals were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer–Emmet–Teller analysis of nitrogen sorptometer, and UV–vis diffuse reflectance spectroscopy. The photocatalytic properties of the cobalt-doped tungsten oxide mesocrystals were evaluated on the basis of their ability to degrade methyl orange in an aqueous solution under simulated sunlight irradiation. Results showed that the cobalt doping had obvious effect on the morphologies of the final products, and lenticular and blocky cobalt-doped tungsten oxide mesocrystals could be obtained with 1.0 wt.% and 2.0 wt.% cobalt doping, respectively. The cobalt-doped tungsten oxides exhibited superior photocatalytic activities to that of the undoped tungsten oxide. - Graphical abstract: Schematic illustrations of the growth of the bundled nanowires, lenticular mesocrystals, and blocky mesocrystals. Highlights: ► Co-doped W 18 O 49 mesocrystals were synthesized using a solvothermal method. ► The Co doping has obvious effect on the morphology of the final mesocrystals. ► The Co-doped W 18 O 49 exhibited superior photocatalytic activity to the undoped W 18 O 49 .

Synthesis and electrical characterization of tungsten oxide nanowires

Institute of Scientific and Technical Information of China (English)

Huang Rui; Zhu Jing; Yu Rong

2009-01-01

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Electronic Structure Control of Tungsten Oxide Activated by Ni for Ultrahigh-Performance Supercapacitors.

Science.gov (United States)

Meng, Tian; Kou, Zongkui; Amiinu, Ibrahim Saana; Hong, Xufeng; Li, Qingwei; Tang, Yongfu; Zhao, Yufeng; Liu, Shaojun; Mai, Liqiang; Mu, Shichun

2018-04-17

Tuning the electron structure is of vital importance for designing high active electrode materials. Here, for boosting the capacitive performance of tungsten oxide, an atomic scale engineering approach to optimize the electronic structure of tungsten oxide by Ni doping is reported. Density functional theory calculations disclose that through Ni doping, the density of state at Fermi level for tungsten oxide can be enhanced, thus promoting its electron transfer. When used as electrode of supercapacitors, the obtained Ni-doped tungsten oxide with 4.21 at% Ni exhibits an ultrahigh mass-specific capacitance of 557 F g -1 at the current density of 1 A g -1 and preferable durability in a long-term cycle test. To the best of knowledge, this is the highest supercapacitor performance reported so far in tungsten oxide and its composites. The present strategy demonstrates the validity of the electronic structure control in tungsten oxide via introducing Ni atoms for pseudocapacitors, which can be extended to other related fields as well. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oxalic acid induced hydrothermal synthesis of single crystalline tungsten oxide nanorods

International Nuclear Information System (INIS)

Patil, V.B.; Adhyapak, P.V.; Suryavanshi, S.S.; Mulla, I.S.

2014-01-01

Highlights: • We report synthesis of 1D tungsten oxide using a hydrothermal route at 170 °C. • Oxalic acid plays an important role in the formation of 1D nanostructure. • Monoclinic transforms to hexagonal phase with increment in reaction duration. -- Abstract: One-dimensional single-crystalline tungsten oxide nanorods have been synthesized by the hydrothermal technique. The controlled morphology of tungsten oxide was obtained by using sodium tungstate and oxalic acid as an organic inducer. The reaction was carried out at 170 °C for 24, 48 and 72 h. The obtained tungsten oxides were investigated by using XRD, SEM and HRTEM techniques. In order to understand the role of organic inducer on the shape, size and phase formation of WO 3 was prepared with and without organic inducer. On heating of sodium tungstate without organic inducer for 72 h at 170 °C in the hydrothermal unit we obtain nanoparticles of monoclinic WO 3 , however, on addition of oxalic acid a single phase hexagonal WO 3 with distinct nanorods was formed. On addition of oxalic acid a systematic emergence of nanorod-like morphology was obtained with incrementing reaction times from 24 h to 48 h. The 72 h reaction generates self-assembled 20–30 nm diameter and 4–5 μm long h-WO 3 bundles of nanorods. The XRD studies show hexagonal structure of tungsten oxide, while SAED reveals its single crystalline nature. The photoluminescence (PL) emission spectrum shows a characteristic blue emission peak at 3 eV (410 nm). Raman spectra provide the evidence of hexagonal structure with stretching vibrations (830 cm −1 ) for 72 h of heating at 170 °C

Oxalic acid induced hydrothermal synthesis of single crystalline tungsten oxide nanorods

Energy Technology Data Exchange (ETDEWEB)

Patil, V.B. [School of Physical Sciences, Solapur University, Solapur 413255 (India); Adhyapak, P.V. [Centre for Materials for Electronic Technology (C-MET), Pune 411008 (India); Suryavanshi, S.S., E-mail: sssuryavanshi@rediffmail.com [School of Physical Sciences, Solapur University, Solapur 413255 (India); Mulla, I.S., E-mail: ismulla2001@gmail.com [Emeritus Scientist (CSIR), Centre for Materials for Electronic Technology (C-MET), Pune 411008 (India)

2014-03-25

Highlights: • We report synthesis of 1D tungsten oxide using a hydrothermal route at 170 °C. • Oxalic acid plays an important role in the formation of 1D nanostructure. • Monoclinic transforms to hexagonal phase with increment in reaction duration. -- Abstract: One-dimensional single-crystalline tungsten oxide nanorods have been synthesized by the hydrothermal technique. The controlled morphology of tungsten oxide was obtained by using sodium tungstate and oxalic acid as an organic inducer. The reaction was carried out at 170 °C for 24, 48 and 72 h. The obtained tungsten oxides were investigated by using XRD, SEM and HRTEM techniques. In order to understand the role of organic inducer on the shape, size and phase formation of WO{sub 3} was prepared with and without organic inducer. On heating of sodium tungstate without organic inducer for 72 h at 170 °C in the hydrothermal unit we obtain nanoparticles of monoclinic WO{sub 3}, however, on addition of oxalic acid a single phase hexagonal WO{sub 3} with distinct nanorods was formed. On addition of oxalic acid a systematic emergence of nanorod-like morphology was obtained with incrementing reaction times from 24 h to 48 h. The 72 h reaction generates self-assembled 20–30 nm diameter and 4–5 μm long h-WO{sub 3} bundles of nanorods. The XRD studies show hexagonal structure of tungsten oxide, while SAED reveals its single crystalline nature. The photoluminescence (PL) emission spectrum shows a characteristic blue emission peak at 3 eV (410 nm). Raman spectra provide the evidence of hexagonal structure with stretching vibrations (830 cm{sup −1}) for 72 h of heating at 170 °C.

Stress reduction in tungsten films using nanostructured compliant layers

International Nuclear Information System (INIS)

Karabacak, Tansel; Picu, Catalin R.; Senkevich, Jay J.; Wang, G.-C.; Lu, T.-M.

2004-01-01

The residual stress in thin films is a major limiting factor for obtaining high quality films. We present a strategy for stress reduction in sputter deposited films by using a nanostructured compliant layer obtained by the oblique angle deposition technique, sandwiched between the film and the substrate. The technique is all in situ, does not require any lithography steps, and the nanostructured layer is made from the same material as the deposited thin film. By using this approach we were able to reduce stress values by approximately one order of magnitude in sputter deposited tungsten films. These lower stress thin films also exhibit stronger adhesion to the substrate, which retards delamination buckling. This technique allows the growth of much thicker films and has enhanced structural stability. A model is developed to explain the stress relief mechanism and the stronger adhesion associated with the presence of the nanostructured compliant layer

Properties of pentacene-based films prepared using a heated tungsten mesh

Energy Technology Data Exchange (ETDEWEB)

Heya, Akira, E-mail: heya@eng.u-hyogo.ac.jp; Matsuo, Naoto

2014-11-03

A heated tungsten (W) mesh, set between a pentacene source and a substrate in a vacuum chamber, was used to prepare a bulk-phase pentacene film and a pentacene-based organic semiconductor film. Since the pentacene molecules come into contact with the heated W mesh before reaching the substrate, their thermal energy is increased prior to deposition. As the mesh temperature was increased from 23 to 1200 °C, the intensity ratio of bulk to thin-film phases increased from 0 to 9.7. Above 1300 °C there is a notable decomposition reaction, the products of which were identified as dihydropentacene, p-distrylbenzene, and 2,2′-dimethyl-1,1′-binaphthalene. These decomposed precursors are expected to provide a potential source of large graphene sheets and graphene nanoribbons. - Highlights: • Organic semiconductor films were prepared using pentacene, H{sub 2} gas, and heated W mesh. • The effect of mesh temperature on film deposition was observed. • Pentacene decomposition above 1300 °C provides graphene precursors. • A method is proposed for controlling the sheet resistance of organic films.

Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

Energy Technology Data Exchange (ETDEWEB)

Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

2015-12-01

Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

Crack resistance of tungsten strengthened by dispersed refractory oxides

International Nuclear Information System (INIS)

Babak, A.V.; Uskov, E.I.

1984-01-01

Investigation results are presented for crack resistance of commercial tungsten, obtained during specimen testing at temperatures of 20 deg C to Tsub(cr) (upper boundary of temperature range of ductile-brittle transition). Comparison of s-n diagrams and temperature dependences of crack resistance are conducted for commercial tungsten and tungsten strengthened by refractory oxides. It is shown that dispersion hardening increases crack resistance in the temperature range of 20 to 2000 deg C but the upper boundary of ductile-brittle shifts to the side of higher temperatures

Electrochromic and electrochemical capacitive properties of tungsten oxide and its polyaniline nanocomposite films obtained by chemical bath deposition method

CSIR Research Space (South Africa)

Nwanya, AC

2014-05-01

Full Text Available Polyanine and its nanocomposite WO3/PANI films were deposited on fluorine doped tin oxide (FTO) glassslides by simple chemical bath deposition method. The morphology structure of the composite film wasstudied using atomic force microscopy (AFM...

Analogy for the maximum obtainable colouration between electrochromic, gasochromic, and electrocolouration in DC-sputtered thin WO3-y films

International Nuclear Information System (INIS)

Stolze, M.; Gogova, D.; Thomas, L.-K.

2005-01-01

Tungsten oxide films with varied substoichiometry were deposited by reactive DC-sputtering from a W target at different oxygen partial pressures. The inherent maximum achievable electrochemical colouration and electrocolouration were found to be dependent on the oxygen content and consequently on the film substoichiometry. These results were related to those obtained in a previous study by colouration with hydrogen spillover from a catalyst (gasochromic colouration) of films fabricated in the same way. A clear analogy among the colouration by the three different techniques appeared

Growth study and photocatalytic properties of Co-doped tungsten oxide mesocrystals

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Logistics Engineering, Shanghai Maritime University, Shanghai 200135 (China); College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061 (China); Chang, Xueting, E-mail: xuetingchang@yahoo.cn [College of Logistics Engineering, Shanghai Maritime University, Shanghai 200135 (China); Li, Zhenjiang [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061 (China)

2012-11-15

Cobalt-doped tungsten oxide mesocrystals with different morphologies have been successfully generated using a solvothermal method with tungsten hexachloride and cobalt chloride salts as precursors. The resulting mesocrystals were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer-Emmet-Teller analysis of nitrogen sorptometer, and UV-vis diffuse reflectance spectroscopy. The photocatalytic properties of the cobalt-doped tungsten oxide mesocrystals were evaluated on the basis of their ability to degrade methyl orange in an aqueous solution under simulated sunlight irradiation. Results showed that the cobalt doping had obvious effect on the morphologies of the final products, and lenticular and blocky cobalt-doped tungsten oxide mesocrystals could be obtained with 1.0 wt.% and 2.0 wt.% cobalt doping, respectively. The cobalt-doped tungsten oxides exhibited superior photocatalytic activities to that of the undoped tungsten oxide. - Graphical abstract: Schematic illustrations of the growth of the bundled nanowires, lenticular mesocrystals, and blocky mesocrystals. Highlights: Black-Right-Pointing-Pointer Co-doped W{sub 18}O{sub 49} mesocrystals were synthesized using a solvothermal method. Black-Right-Pointing-Pointer The Co doping has obvious effect on the morphology of the final mesocrystals. Black-Right-Pointing-Pointer The Co-doped W{sub 18}O{sub 49} exhibited superior photocatalytic activity to the undoped W{sub 18}O{sub 49}.

Effects of oxygen contents on the electrochromic properties of tungsten oxide films prepared by reactive magnetron sputtering

International Nuclear Information System (INIS)

Lu, H.-H.

2008-01-01

The electrochromism have been extensively investigated due to their potential applications such as smart window of architecture and automobile glazing to save energy and modulate the transmittance of light and solar radiation. The objective of this study is to investigate the effects of sputtering conditions on the microstructure and electrochromic properties of tungsten oxide films prepared by dc reactive magnetron sputtering. Experimental results showed that the deposition rate of WO 3-y films decreased with increasing oxygen flow rate. XRD and Raman spectra analysis suggests that the WO 3-y films deposited at various oxygen flow rates are poor crystallinity or amorphous. The transmission change between colored and bleached states at a wavelength of 550 nm was 61.4% as the oxygen content was 60%. The coloration efficiency slightly increases with increasing oxygen flow rate in the low oxygen content region and reaching a maximum value of 38.94 cm 2 /C at 60% oxygen content. In addition, the films deposited at 60% oxygen content showed a good reversibility. The effects of lithium ions intercalated on the transmission of WO 3-y films were also discussed

Electrical and optical properties of mixed phase tungsten trioxide films grown by laser pyrolysis

CSIR Research Space (South Africa)

Govender, M

2014-02-01

Full Text Available the tungstate bronzes to tungsten oxide. I-V curves of the films showed n-type semiconducting behaviour, but the mixed phase appeared to cause a similar behaviour of dopants in a semiconductor. The refractive index decreased with increasing wavelength and gave...

Ion sensing properties of vanadium/tungsten mixed oxides

International Nuclear Information System (INIS)

Guidelli, Eder Jose; Guerra, Elidia Maria; Mulato, Marcelo

2011-01-01

Vanadium/tungsten mixed oxide (V 2 O 5 /WO 3 ) sensing membranes were deposited on glassy carbon substrates and used as the H + sensor of the extended gate field effect transistor (EGFET) device. X-ray diffractograms indicated a decrease of the interplanar spacing of V 2 O 5 after the insertion of WO 3 revealing that the lamellar structure is under compressive stress. The crystallinity increases with increasing WO 3 molar ratio. The film is not homogeneous, with more WO 3 material sitting at the surface. This influences the response of pH sensors using the EGFET configuration. The maximum sensitivity of 68 mV pH -1 was obtained for the sample with 5% WO 3 molar ratio. For higher WO 3 molar ratios, the behavior is not linear. It can be concluded that V 2 O 5 dominates for acidic solutions while WO 3 dominates for basic solutions. Therefore, the mixed oxide with low amount of WO 3 is the main candidate for further use as biosensor.

Mechanism of anodic oxidation of molybdenum and tungsten in nitrate-nitrite melts

International Nuclear Information System (INIS)

Yurkinskij, V.P.; Firsova, E.G.; Morachevskij, A.G.

1987-01-01

The mechanism of anode oxidation of tungsten and molybdenum in NaNO 3 -KNO 3 (50 mass %) nitrate-nitrite melts with NaNO 2 -KNO 2 (0.5-50 mass %) addition and in NaNO 2 -KNO 2 (35 mole %) nitrite melt in the 516-580 K temperature range is studied. It is supposed that the process of anode dissloving of the mentioned metals in nitrite melt and nitrate-nitrite mixtures is two-electron. Formation of oxide passivating film is possible under electrolysis on the anode surface, the film is then dissolved in nitrate-nitrite melt with formation of molybdates or tungstates

Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

Science.gov (United States)

Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

2011-12-01

The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

International Nuclear Information System (INIS)

Koch, F; Brinkmann, J; Lindig, S; Mishra, T P; Linsmeier, Ch

2011-01-01

The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

Nanostructured Thin Films Obtained from Fischer Aminocarbene Complexes

Directory of Open Access Journals (Sweden)

Rosa E. Lazo-Jiménez

2016-03-01

Full Text Available The synthesis of four amphiphilic organometallic complexes with the general formula RC = M(CO5NH(CH215CH3, where R is a ferrocenyl 2(a-b or a phenyl 4(a-b group as a donor moiety and a Fischer carbene of chromium (0 or tungsten (0 as an acceptor group, are reported. These four push-pull systems formed Langmuir (L monolayers at the air-water interface, which were characterized by isotherms of surface pressure versus molecular area and compression/expansion cycles (hysteresis curves; Brewster angle microscopic images were also obtained. By using the Langmuir–Blodgett (LB method, molecular monolayers were transferred onto glass substrates forming Z-type multilayers. LB films were characterized through ultraviolet-visible spectroscopy, atomic force microscopy and X-ray diffraction techniques. Results indicated that films obtained from 2b complex [(Ferrocenyl(hexadecylaminemethylidene] pentacarbonyl tungsten (0 are the most stable and homogeneous; due to their properties, these materials may be incorporated into organic electronic devices.

Nanostructured Thin Films Obtained from Fischer Aminocarbene Complexes

Science.gov (United States)

Lazo-Jiménez, Rosa E.; Ortega-Alfaro, M. Carmen; López-Cortés, José G.; Alvarez-Toledano, Cecilio; Chávez-Carvayar, José Á.; Ignés-Mullol, Jordi; González-Torres, Maykel; Carreón-Castro, Pilar

2016-01-01

The synthesis of four amphiphilic organometallic complexes with the general formula RC = M(CO)5NH(CH2)15CH3, where R is a ferrocenyl 2(a-b) or a phenyl 4(a-b) group as a donor moiety and a Fischer carbene of chromium (0) or tungsten (0) as an acceptor group, are reported. These four push-pull systems formed Langmuir (L) monolayers at the air-water interface, which were characterized by isotherms of surface pressure versus molecular area and compression/expansion cycles (hysteresis curves); Brewster angle microscopic images were also obtained. By using the Langmuir–Blodgett (LB) method, molecular monolayers were transferred onto glass substrates forming Z-type multilayers. LB films were characterized through ultraviolet-visible spectroscopy, atomic force microscopy and X-ray diffraction techniques. Results indicated that films obtained from 2b complex [(Ferrocenyl)(hexadecylamine)methylidene] pentacarbonyl tungsten (0) are the most stable and homogeneous; due to their properties, these materials may be incorporated into organic electronic devices. PMID:28773289

Vanadium oxide thin films and fibers obtained by acetylacetonate sol–gel method

Energy Technology Data Exchange (ETDEWEB)

Berezina, O.; Kirienko, D. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Pergament, A., E-mail: aperg@psu.karelia.ru [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Stefanovich, G.; Velichko, A. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Zlomanov, V. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

2015-01-01

Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol–gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO{sub 2} phase is chosen: 1) 25–550 °C and 2) 550–600 °C. The obtained films demonstrate the metal–insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. - Highlights: • Vanadium oxide thin films and fibers are synthesized by sol–gel method. • The effect of annealing, atmosphere, time and electrospinning parameters is studied. • Produced VO{sub 2} structures exhibit metal–insulator transition and electrical switching.

Low-temperature transport in ultra-thin tungsten films

Energy Technology Data Exchange (ETDEWEB)

Chiatti, Olivio [Neue Materialien, Institut fuer Physik, Humboldt-Univ. Berlin (Germany); London Centre for Nanotechnology, University College London (United Kingdom); Nash, Christopher; Warburton, Paul [London Centre for Nanotechnology, University College London (United Kingdom)

2012-07-01

Tungsten-containing films, fabricated by focused-ion-beam-induced chemical vapour deposition, are known to have an enhanced superconducting transition temperature compared to bulk tungsten, and have been investigated previously for film thickness down to 25 nm. In this work, by using ion-beam doses below 50 pC/{mu}m{sup 2} on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The electron transport properties were investigated at temperatures down to 350 mK and in magnetic fields up to 3 T, parallel and perpendicular to the films. The films in this work are closer to the limit of two-dimensional systems and are superconducting at low temperatures. Magnetoresistance measurements yield upper critical fields of the order of 1 T, and the resulting coherence length is smaller than the film thickness.

Electro-optical evaluation of tungsten oxide and vanadium pentoxide thin films for modeling an electrochromic device

Directory of Open Access Journals (Sweden)

H Najafi Ashtiani

2015-01-01

Full Text Available In this study, tungsten oxide and vanadium oxide electrochromic thin films were placed in vacuum and in a thickness of 200 nm on a transparent conductive substrate of SnO2:F using the physical method of thermal evaporation. Then they were studied for the optical characteristics in the wavelength range from 400 to 700 nm and for their electrical potentials in the range form +1.5 to -1.5 volts. The films were post heated in order to assess changes in energy gap with temperature, at temperatures120 , 300 and 500°C. Refractive and extinction coefficients and the transition type of films in the visible light range and in the thickness of 200 nm were determined and measured. X-ray diffraction pattern and SEM images and cyclic Voltammetry of layers were also studied. The results of this study due to the deposition of layers, the layer thickness selected, the type of substrate, the range of annealing temperatures and selected electrolyte were in full compliance with the works of other researchers [1,2,3]. Therefore, these layers with features such as crystal structure, refractive and even extinction coefficients in the range of visible light, the appropriate response of chromic switch in the replication potential, good adhesion to the substrate, and the high amount of optical transmition and so on, prove useful to be used in an electrochromic device

Tritium retention properties of tungsten, graphite and co-deposited carbon film

International Nuclear Information System (INIS)

Nobuta, Y.; Hatano, Y.; Matsuyama, M.; Abe, S.; Akamaru, S.; Yamauchi, Y.; Hino, T.; Suzuki, S.; Akiba, M.

2014-01-01

DT + ion irradiation was performed on polycrystalline tungsten, graphite and carbon film and both the amount of retained tritium and the reduction of retained tritium after preservation in vacuum were investigated using an IP technique and BIXS. In addition, the relationship between the retention properties of tritium and the microstructure of graphite and carbon film were studied with Raman spectroscopy. The amount of retained tritium in tungsten was smaller than in both graphite and carbon film. After 1 keV of DT + irradiation, graphite showed no reduction of the amount of retained tritium after six months preservation while that of carbon film decreased by approximately 20% after 40 days preservation. It was suggested that this difference might be associated with differences in the microstructure between graphite and carbon film. In tungsten, the amount of retained tritium decreased to approximately half after 18 days preservation. As the incident energy of implanted tritium to tungsten increased, the decrease in tritium retention during preservation became slower. Tungsten's properties of releasing tritium while preserved in vacuum would be a useful tool for the reduction/removal of retained tritium

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite; Estudo de filme de grafeno/oxido de grafeno obtido por reducao quimica parcial do oxido de grafite

Energy Technology Data Exchange (ETDEWEB)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H., E-mail: juliagascho@hotmail.com [Universidade do Estado de Santa Catarina (UDESC), Joinville, SC (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais

2014-07-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Study of thermoelectron emission of oxidized tungsten sponge in cesium atom flow

International Nuclear Information System (INIS)

Tursunmetov, K.A.; Sabirov, A.K.

1993-01-01

Thermoelectron emission of a tungsten sponge with 30-40% porosity is studied. The tungsten sponge is produced of fine-grain tungsten powder (diameter - 1-2 μm) according to standard technology. It is shown that tungsten sponge oxidation at T=1000 K with subsequent heating in vacuum at T=1100 K allows one to obtain the minimal stable and reproducible work function at the level of 1.03-1.05 eV in a flux of cesium atoms. Estimations show that effective emitting surface is 15-20 times as much as the polycrystal surface

Refining waste hardmetals into tungsten oxide nanosheets via facile method

Energy Technology Data Exchange (ETDEWEB)

Li, Zhifei; Zheng, Guangwei; Wang, Jinshu, E-mail: wangjsh@bjut.edu.cn; Li, Hongyi, E-mail: lhy06@bjut.edu.cn; Wu, Junshu; Du, Yucheng [Beijing University of Technology, Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering (China)

2016-04-15

A new hydrothermal system has been designed to recycle waste WC–Co hardmetal with low cobalt (Co) content (3 %). In the solution system, nitric acid was designed to dissolve Co, H{sub 2}O{sub 2} served as oxidant to accelerate the oxidation of the WC–Co hardmetals, and fluorine (F{sup −}) was designed to dissolve and recrystallize generated tungsten oxides, which were found to possess a layered structure using scanning electron microscopy and transmission electron microscopy. The obtained tungsten oxides were identified as WO{sub 3}·0.33H{sub 2}O by X-ray diffraction and their specific surface area was measured as 89.2 m{sup 2} g{sup −1} via N{sub 2} adsorption–desorption techniques. The present layered structure tungsten oxides exhibited a promising capability for removing lead ion (Pb{sup 2+}) and organic species, such as methyl blue. The adsorption model was found to be in agreement with Langmuir isotherm model. Given the facile synthesis procedure and promising properties of final products, this new approach should have great potential for refining some other waste hardmetals or tungsten products.Graphical AbstractA new hydrothermal system was designed to recycle waste hardmetal with low cobalt content. Through this method, waste hardmetal was refined into WO{sub 3}·0.33H{sub 2}O nanosheets which shows excellent adsorption capacities toward methylene blue and lead ion (Pb{sup 2+}).

Tungsten Oxide Photonic Crystals as Optical Transducer for Gas Sensing.

Science.gov (United States)

Amrehn, Sabrina; Wu, Xia; Wagner, Thorsten

2018-01-26

Some metal oxide semiconductors, such as tungsten trioxide or tin dioxide, are well-known as resistive transducers for gas sensing and offer high sensitivities down to the part per billion level. Electrical signal read-out, however, limits the information obtained on the electronic properties of metal oxides to a certain frequency range and its application because of the required electrical contacts. Therefore, a novel approach for building an optical transducer for gas reactions utilizing metal oxide photonic crystals is presented here. By the rational design of the structure and composition it is possible to synthesize a functional material which allows one to obtain insight into its electronic properties in the optical frequency range with simple experimental measures. The concept is demonstrated by tungsten trioxide inverse opal structure as optical transducer material for hydrogen sensing. The sensing behavior is analyzed in a temperature range from room temperature to 500 °C and in a wide hydrogen concentration range (3000 ppm to 10%). The sensing mechanism is mainly the refractive index change resulting from hydrogen intercalation in tungsten trioxide, but the back reaction has also impact on the optical properties of this system. Detailed chemical reaction studies provide suggestions for specific sensing conditions.

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Adsorption of lithium-lanthanum films on the (100) tungsten face

International Nuclear Information System (INIS)

Gupalo, M.S.; Smereka, T.P.; Babkin, G.V.; Palyukh, B.M.

1982-01-01

The method of contact potential difference is used to investigate combined adsorption of lithium-lanthanum on the (100) tungsten face. The data on work functions and thermal stability of mixed lithium-lanthanum films are obtained. The presence of lanthanum on the W(100) surface leads to appearance of minimum of work functions unobserved for the Li-W(100) system, minimum work functions and optimum lithium concentration in a mixed film are decreased at initial lanthanum coating increase. The presence of lanthanum on the W(100) face leads to lithium adsorption heat decrease

Colour centres in amorphous tungsten trioxide thin films

International Nuclear Information System (INIS)

Kleperis, J.J.; Cikmach, P.D.; Lusis, A.R.

1984-01-01

Magnetic, optical, and electrical properties of thin tungsten trioxide (a-WO 3 ) films obtained on substrates with different temperatures and annealed in air and vacuum are investigated. On the basis of these results and recent structural investigations a structure model of the a-WO 3 film is given: a spatial network of tightly bounded clusters which are built from hydrated WO 6 octahedra. These octahedra contain terminal oxygens and being axially distorted they are the sites for localization of injected electrons. The colour centres formed are paramagnetic (ESR signal from W 5+ ) and their optical absorption is satisfactorily described by the intervalence charge transfer between the localized states of W 5+ and W 6+ ions. (author)

The gate oxide integrity of CVD tungsten polycide

International Nuclear Information System (INIS)

Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

1988-01-01

CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

Adhesion of non-selective CVD tungsten to silicon dioxide

International Nuclear Information System (INIS)

Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

1986-01-01

Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

Microscopic investigations of chemo-mechanical polishing of tungsten

International Nuclear Information System (INIS)

Lim, Min Soo; Heide, Paul A.W. van der; Perry, Scott S.; Galloway, Heather C.; Koeck, Deborah C.

2004-01-01

The influence of aqueous solutions of KNO 3 , KClO 3 , and KIO 3 on tungsten surfaces has been investigated in terms of the degree of surface oxidation, metal dissolution and interfacial friction. The surface properties of tungsten films have been measured ex-situ with X-ray photoelectron spectroscopy and in situ with atomic force microscopy. Measurements of the surface composition reveal a greater degree of oxidation for surfaces treated in solutions of KIO 3 in comparison to the other solutions. This increase in surface oxidation is correlated to a greater rate of localized film dissolution that occurs under the action of the scanning probe tip. In turn, the process of material removal is the predominant origin of the higher interfacial friction measured at tungsten surfaces immersed in KIO 3 solutions, as compared to KClO 3 and KNO 3 solutions. Collectively, these measurements portray a fundamental pathway of material removal at tungsten surfaces in the presence of oxidizing species and highlight complementary roles of chemical and mechanical action

Microscopic investigations of chemo-mechanical polishing of tungsten

Energy Technology Data Exchange (ETDEWEB)

Lim, Min Soo; Heide, Paul A.W. van der; Perry, Scott S.; Galloway, Heather C.; Koeck, Deborah C

2004-06-15

The influence of aqueous solutions of KNO{sub 3}, KClO{sub 3}, and KIO{sub 3} on tungsten surfaces has been investigated in terms of the degree of surface oxidation, metal dissolution and interfacial friction. The surface properties of tungsten films have been measured ex-situ with X-ray photoelectron spectroscopy and in situ with atomic force microscopy. Measurements of the surface composition reveal a greater degree of oxidation for surfaces treated in solutions of KIO{sub 3} in comparison to the other solutions. This increase in surface oxidation is correlated to a greater rate of localized film dissolution that occurs under the action of the scanning probe tip. In turn, the process of material removal is the predominant origin of the higher interfacial friction measured at tungsten surfaces immersed in KIO{sub 3} solutions, as compared to KClO{sub 3} and KNO{sub 3} solutions. Collectively, these measurements portray a fundamental pathway of material removal at tungsten surfaces in the presence of oxidizing species and highlight complementary roles of chemical and mechanical action.

Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

International Nuclear Information System (INIS)

Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

2012-01-01

Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

Science.gov (United States)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com; Jatisukamto, Gaguk, E-mail: gagukjtsk@yahoo.co.id [Mechanical and Industrial Engineering Department, Gadjah Mada University Jl. Grafika 2, Yogyakarta, 55281 (Indonesia)

2016-03-29

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

The chemistry and structure of nickel–tungsten coatings obtained by pulse galvanostatic electrodeposition

International Nuclear Information System (INIS)

Argañaraz, M.P. Quiroga; Ribotta, S.B.; Folquer, M.E.; Zelaya, E.; Llorente, C.; Ramallo-López, J.M.; Benítez, G.; Rubert, A.; Gassa, L.M.; Vela, M.E.; Salvarezza, R.C.

2012-01-01

A detailed characterization of electrodeposited Ni-W coatings prepared by pulse electrodeposition on steel and copper substrates is presented. The coatings were obtained at high current pulse frequency and show high microhardness and absence of brittleness. The surface of the coating consists of nanometer sized crystals forming a cauliflower-like structure protected by a mixture of nickel and tungsten oxides. The cauliflower structure is preserved into the bulk coating that exhibits an average composition ≈70 at% Ni-30 at% W. Different phases are observed in the bulk structure: a W-rich amorphous phase (≈40%) and Ni-rich crystalline phases (≈60%). The crystalline phases consist of crystalline domains ≈7 nm in size of Ni(W) (fcc) solid solution (12 at% W content) and a minor Ni 4 W component (less than 10%). The amorphous phase exhibits a less compact Ni-W structure where some amount of C could also be present. Oxidized W species cannot be detected in the bulk coating, thus discarding the presence of significant amounts of tungsten carbide, tungstates or citrate–tungsten complexes. Our results shed light on controversial points related to the chemical composition and demonstrate the complex structure of this system.

Co-deposition of rhodium and tungsten films for the first-mirror on ITER

International Nuclear Information System (INIS)

Marot, Laurent; Steiner, Roland; Gantenbein, Markus; Mathys, Daniel; Meyer, Ernst

2011-01-01

The detailed characterizations of rhodium/tungsten films prepared by co-deposition using a dual magnetron sputtering have been carried out on silicon substrates at room temperature. Effects of the tungsten incorporated in the film on the chemical bonding state, optical reflectivity and crystallinity were investigated using X-ray photoelectron spectroscopy (XPS), reflectivity measurements, X-rays diffraction (XRD) and scanning electron microscopy (SEM). The incorporation of tungsten changes the films crystalline structure i.e. leading to Rh 3 W formation. The reflectivity of the films decreases linearly with the decrease of rhodium concentration. XPS and ultraviolet photoemission spectroscopy (UPS) measurements show a positive shift of the core level binding energy of rhodium which is coupled to a shift of the Rh d-band ΔE d away from the Fermi level. Opposite shifts are observed for tungsten.

Cathodic electrodeposition of mixed molybdenum tungsten oxides from peroxo-polymolybdotungstate solutions.

Science.gov (United States)

Kondrachova, Lilia; Hahn, Benjamin P; Vijayaraghavan, Ganesh; Williams, Ryan D; Stevenson, Keith J

2006-12-05

Mixed molybdenum tungsten trioxide films of varying stoichiometry (MoxW1 - xO3, 0 cathodic electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous peroxo-polymolybdotungstate solutions. Electrochemical quartz crystal microbalance (EQCM), cyclic voltammetry, and chronocoulometry were used to gain insight into the electrodeposition mechanism. The compositional and structural properties were characterized for MoxW1 - xO3 films deposited at intermediate potentials (-0.35 V vs Ag/AgCl) and sintered at 250 degrees C using energy-dispersive spectroscopy, X-ray diffraction, and Raman spectroscopy. These studies reveal that films consist of homogeneously mixed MoxW1 - xO3, with an enriched Mo content ranging in composition from 0.4 < x < 0.7 depending upon the mol % Mo present in the deposition solution. Chronoamperometry and spectroelectrochemical measurements were conducted to estimate lithium ion diffusion coefficients and coloration efficiencies for the mixed metal oxide films in 1 M LiClO4/propylene carbonate. The subtle interplay between structural and compositional properties due to the uniform mixing of Mo and W oxide components shows that electrochromic and lithium ion transport properties are moderately enhanced relative to those of single-component WO3 and MoO3 and demonstrate improved structural stability over pure MoO3 polymorphs during electrochemical cycling.

Room temperature NO2-sensing properties of porous silicon/tungsten oxide nanorods composite

International Nuclear Information System (INIS)

Wei, Yulong; Hu, Ming; Wang, Dengfeng; Zhang, Weiyi; Qin, Yuxiang

2015-01-01

Highlights: • Porous silicon/WO 3 nanorods composite is synthesized via hydrothermal method. • The morphology of WO 3 nanorods depends on the amount of oxalic acid (pH value). • The sensor can detect ppb level NO 2 at room temperature. - Abstract: One-dimensional single crystalline WO 3 nanorods have been successfully synthesized onto the porous silicon substrates by a seed-induced hydrothermal method. The controlled morphology of porous silicon/tungsten oxide nanorods composite was obtained by using oxalic acid as an organic inducer. The reaction was carried out at 180 °C for 2 h. The influence of oxalic acid (pH value) on the morphology of porous silicon/tungsten oxide nanorods composite was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The NO 2 -sensing properties of the sensor based on porous silicon/tungsten oxide nanorods composite were investigated at different temperatures ranging from room temperature (∼25 °C) to 300 °C. At room temperature, the sensor behaved as a typical p-type semiconductor and exhibited high gas response, good repeatability and excellent selectivity characteristics toward NO 2 gas due to its high specific surface area, special structure, and large amounts of oxygen vacancies

Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong Kyu; Nam, Seok Woo; Cho, Sung Il; Jhon, Myung S.; Min, Kyung Suk; Kim, Chan Kyu; Jung, Ho Bum; Yeom, Geun Young [Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, South Korea and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711 (Korea, Republic of); Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2012-11-15

The oxidation characteristics of tungsten line pattern during the carbon-based mask-layer removal process using oxygen plasmas have been investigated for sub-50 nm patterning processes, in addition to the reduction characteristics of the WO{sub x} layer formed on the tungsten line surface using hydrogen plasmas. The surface oxidation of tungsten lines during the mask layer removal process could be minimized by using low-temperature (300 K) plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WO{sub x} on the tungsten line could be decreased to 25% compared to results from high-temperature processing. The WO{sub x} layer could also be completely removed at a low temperature of 300 K using a hydrogen plasma by supplying bias power to the tungsten substrate to provide a activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40-nm-CD device processing, the complete removal of WO{sub x} formed on the sidewall of tungsten line could be observed.

Sunlight-charged electrochromic battery based on hybrid film of tungsten oxide and polyaniline

Science.gov (United States)

Chang, Xueting; Hu, Ruirui; Sun, Shibin; Liu, Jingrong; Lei, Yanhua; Liu, Tao; Dong, Lihua; Yin, Yansheng

2018-05-01

Electrochromic (EC) energy storage devices that could realize the multifunctional integration of energy storage and electrochromism have gained much recent attention. Herein, an EC battery based on the hybrid film of W18O49 and polyaniline (PANI) is developed and assembled, which integrates energy storage and EC functions in one device. The W18O49/PANI-EC battery delivers a discharging capacity of 52.96 mA h g-1, which is about two times higher than that of the W18O49-EC battery. Sunlight irradiation could greatly promote the oxidation reactions of both W18O49 and PANI during the charging process of the W18O49/PANI-EC battery, thus effectively accelerating the charging rate. This work provides a green, convenient, environmentally friendly, and cost-free charging strategy for the EC energy systems and could further advance the development of the multifunctional EC devices based on the organic/inorganic composites.

Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

Energy Technology Data Exchange (ETDEWEB)

Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

2016-08-01

Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

Energy Technology Data Exchange (ETDEWEB)

Evans, R [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, S [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, M A [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Paseo Colon y Tollocan, Toluca Edo. de Mexico, 50110 (Mexico); Sanchez-Perez, C [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico); Esparza-GarcIa, A [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico)

2007-04-15

In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO{sub 3} phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm.

Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

International Nuclear Information System (INIS)

Evans, R; Camacho-Lopez, S; Camacho-Lopez, M A; Sanchez-Perez, C; Esparza-GarcIa, A

2007-01-01

In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO 3 phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm

Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO2 gas sensor applications

International Nuclear Information System (INIS)

Hoa, Nguyen Duc; Duy, Nguyen Van; Hieu, Nguyen Van

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Mesoporous WO 3 nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO 3 sensor exhibited a high performance to NO 2 gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO 2 ) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO 2 . In addition, the developed sensor exhibited selective detection of low NO 2 concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

Studies on the pressed yttrium oxide-tungsten matrix as a possible dispenser cathode material

International Nuclear Information System (INIS)

Yang, Fan; Wang, Jinshu; Liu, Wei; Liu, Xiang; Zhou, Meiling

2015-01-01

Yttrium oxide was chosen as the secondary emission substance based on calculation results through first principle theory method. A new kind of pressed yttrium oxide-tungsten matrix dispenser cathodes are prepared by a sol–gel method combined with high temperature sintering in dry hydrogen atmosphere. The results show that the growth of the grains is hampered by the pinning effect of Y 2 O 3 distributing uniformly between the tungsten particles, resulting in the formation of small grain size. It is found that Y 2 O 3 improves the secondary electron emission property, i.e., the secondary emission yield increases with the increase of Y 2 O 3 content in the samples. The maximum secondary emission yield δ max of the cathode with 15% amount of Y 2 O 3 can reach 2.92. Furthermore, the cathode shows a certain thermionic emission performance. The zero field emission current density J 0 of 4.18A/cm 2 has reached at 1050 °C b for this kind of cathode after being activated at 1200 °C b , which are much higher than that of rare earth oxide doped molybdenum (REO-Mo) cathode reported in the previous work. - Highlights: • Yttrium oxide was chosen as the secondary emission substance based on first principle calculation result. • A new kind of cathode has been successfully obtained. • Pressed yttrium oxide-tungsten matrix dispenser cathode exhibits good emission properties. • The improvement of the cathode emission can be well explained by the surface analysis results presented in this work

Films based on oxidized starch and cellulose from barley.

Science.gov (United States)

El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

2015-11-20

Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

Physical Properties of Macroporous Tungsten Oxide Thin Films and Their Impact on the Photocurrent Density

Directory of Open Access Journals (Sweden)

I. Riech

2013-01-01

Full Text Available Tungsten trioxide (WO3 films were prepared using polystyrene spheres of two different diameters as a template in order to create porous layers. X-ray diffraction data and electron microscopy images show that annealed films exhibit polycrystalline structure with monoclinic phase and pore size of approximately hundred nanometers. The optical band gap energies have been determined by photoacoustic spectroscopy as 3.17 eV, and this value was not affected by sample morphology. Low temperature photoluminescence spectra exhibit broad band in the blue region. Deconvolutions of PL spectra show that there are two transitions which intensity depends on thin film pore size. We discuss the possible origin of this emissions associated with oxygen vacancies and surface states. A comparative study of the WO3 films used as photoanodes is presented and correlated with PL results.

Inhomogeneous strain states in sputter deposited tungsten thin films

International Nuclear Information System (INIS)

Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

1997-01-01

The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

Properties of tungsten films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

1986-01-01

High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

Studies on the pressed yttrium oxide-tungsten matrix as a possible dispenser cathode material

Energy Technology Data Exchange (ETDEWEB)

Yang, Fan; Wang, Jinshu, E-mail: wangjsh@bjut.edu.cn; Liu, Wei; Liu, Xiang; Zhou, Meiling

2015-01-15

Yttrium oxide was chosen as the secondary emission substance based on calculation results through first principle theory method. A new kind of pressed yttrium oxide-tungsten matrix dispenser cathodes are prepared by a sol–gel method combined with high temperature sintering in dry hydrogen atmosphere. The results show that the growth of the grains is hampered by the pinning effect of Y{sub 2}O{sub 3} distributing uniformly between the tungsten particles, resulting in the formation of small grain size. It is found that Y{sub 2}O{sub 3} improves the secondary electron emission property, i.e., the secondary emission yield increases with the increase of Y{sub 2}O{sub 3} content in the samples. The maximum secondary emission yield δ{sub max} of the cathode with 15% amount of Y{sub 2}O{sub 3} can reach 2.92. Furthermore, the cathode shows a certain thermionic emission performance. The zero field emission current density J{sub 0} of 4.18A/cm{sup 2} has reached at 1050 °C{sub b} for this kind of cathode after being activated at 1200 °C{sub b}, which are much higher than that of rare earth oxide doped molybdenum (REO-Mo) cathode reported in the previous work. - Highlights: • Yttrium oxide was chosen as the secondary emission substance based on first principle calculation result. • A new kind of cathode has been successfully obtained. • Pressed yttrium oxide-tungsten matrix dispenser cathode exhibits good emission properties. • The improvement of the cathode emission can be well explained by the surface analysis results presented in this work.

Coating of tips for electrochemical scanning tunneling microscopy by means of silicon, magnesium, and tungsten oxides

Science.gov (United States)

Salerno, Marco

2010-09-01

Different combinations of metal tips and oxide coatings have been tested for possible operation in electrochemical scanning tunneling microscopy. Silicon and magnesium oxides have been thermally evaporated onto gold and platinum-iridium tips, respectively. Two different thickness values have been explored for both materials, namely, 40 and 120 nm for silicon oxide and 20 and 60 nm for magnesium oxide. Alternatively, tungsten oxide has been grown on tungsten tips via electrochemical anodization. In the latter case, to seek optimal results we have varied the pH of the anodizing electrolyte between one and four. The oxide coated tips have been first inspected by means of scanning electron microscopy equipped with microanalysis to determine the morphological results of the coating. Second, the coated tips have been electrically characterized ex situ for stability in time by means of cyclic voltammetry in 1 M aqueous KCl supporting electrolyte, both bare and supplemented with K3[Fe(CN)6] complex at 10 mM concentration in milliQ water as an analyte. Only the tungsten oxide coated tungsten tips have shown stable electrical behavior in the electrolyte. For these tips, the uncoated metal area has been estimated from the electrical current levels, and they have been successfully tested by imaging a gold grating in situ, which provided stable results for several hours. The successful tungsten oxide coating obtained at pH=4 has been assigned to the WO3 form.

Electrochromics for smart windows: Oxide-based thin films and devices

Energy Technology Data Exchange (ETDEWEB)

Granqvist, Claes G.

2014-08-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Electrochromics for smart windows: Oxide-based thin films and devices

International Nuclear Information System (INIS)

Granqvist, Claes G.

2014-01-01

Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

Electronic structure of nanoparticles of substoichometric hexagonal tungsten oxides

International Nuclear Information System (INIS)

Khyzhun, O Y; Solonin, Y M

2007-01-01

X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES) and X-ray absorption spectroscopy (XAS) methods were used to study the electronic structure of hexagonal h-WO 3 and h-WO 2.8 nanoparticles. For comparison, nanopowder substoichiometric monoclinic tungsten oxides with close content of oxygen atoms, namely m-WO 3 and m-WO 2.77 compounds, were also investigated. For the mentioned oxides, XPS valence-band and corelevel spectra, XES O Kα bands and XAS W L III and O 1s edges were derived. The XPS valence-band spectra and O Kα emission bands in the mentioned hexagonal and monoclinic tungsten oxides were compared on a common energy scale. Both the O Kα bands and XPS valence-band spectra broaden somewhat in the sequences h-WO 3 → h-WO 2.8 and m-WO 3 → m-WO 2.77 , with the half-widths of the spectra being somewhat higher for the hexagonal oxides as compared with those for the monoclinic compounds. The effective positive charge state of tungsten atoms in h-WO 2.8 is very close to that in m-WO 2.77 , but the negative charge states of oxygen atoms are close to each other for all the tungsten oxides under consideration

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

A supercritical carbon dioxide plasma process for preparing tungsten oxide nanowires

International Nuclear Information System (INIS)

Kawashima, Ayato; Nomura, Shinfuku; Toyota, Hiromichi; Takemori, Toshihiko; Mukasa, Shinobu; Maehara, Tsunehiro

2007-01-01

A supercritical carbon dioxide (CO 2 ) plasma process for fabricating one-dimensional tungsten oxide nanowires coated with amorphous carbon is presented. High-frequency plasma was generated in supercritical carbon dioxide at 20 MPa by using tungsten electrodes mounted in a supercritical cell, and subsequently an organic solvent was introduced with supercritical carbon dioxide into the plasma. Electron microscopy and Raman spectroscopy investigations of the deposited materials showed the production of tungsten oxide nanowires with or without an outer layer. The nanowires with an outer layer exhibited a coaxial structure with an outer concentric layer of amorphous carbon and an inner layer of tungsten oxide with a thickness and diameter of 20-30 and 10-20 nm, respectively

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2010-01-01

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

2010-09-15

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO{sub 2} gas sensor applications

Energy Technology Data Exchange (ETDEWEB)

Hoa, Nguyen Duc, E-mail: ndhoa@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Duy, Nguyen Van [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Hieu, Nguyen Van, E-mail: hieu@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Mesoporous WO{sub 3} nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO{sub 3} sensor exhibited a high performance to NO{sub 2} gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO{sub 2}) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO{sub 2}. In addition, the developed sensor exhibited selective detection of low NO{sub 2} concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

Research and development of tungsten electrodes added with rare earth oxides

International Nuclear Information System (INIS)

Zuoren Nie; Ying Chen; Meiling Zhou; Tieyong Zuo

2001-01-01

The recent research and development of tungsten electrodes used in TIG and Plasma technologies are introduced, and the tungsten materials as well as the effects of rare earth oxides are specially discussed. in W-La 2 O 3 , W-CeO 2 , W-Y 2 O 3 and W-ThO 2 electrode materials, the W-2.2mass%La 2 O 3 electrode exhibited the best properties when the current is of little or middle volume, and when the electrodes are used in large current, the W-Y 2 O 3 electrode is the best. By a comparative study between the tungsten electrodes activated with single metal oxides, as above-mentioned, and those containing two or three rare earth oxides, namely La 2 O 3 , CeO 2 and Y 2 O 3 , it was indicated that the welding arc properties of the tungsten electrodes activated with combined rare earth oxides additions is superior than that of the electrodes containing single oxides as above mentioned. It was also shown that the operating properties of tungsten electrodes depend intensively on the rare earth oxides contained in the electrodes, and the actions of rare earth oxides during arcing are the most important factors to the electrodes' operating properties, temperature, work function as well as the arc stability. (author)

Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

International Nuclear Information System (INIS)

Lee, W.W.; Reeves, R.R.

1992-01-01

A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Synthesis and optical properties of Au decorated colloidal tungsten oxide nanoparticles

International Nuclear Information System (INIS)

Tahmasebi, Nemat; Mahdavi, Seyed Mohammad

2015-01-01

Highlights: • Tungsten oxide nanoparticles were prepared by pulsed laser ablation (PLA). • A very fine metallic Au particles or coating are decorated on the surface of tungsten oxide nanoparticles. • UV–Vis spectroscopy shows an absorption peak at ∼530 nm which is due to SPR effect of gold. • After exposing to hydrogen gas, Au/WO_3 colloidal nanoparticles show excellent gasochromic coloring. - Abstract: In this study, colloidal tungsten oxide nanoparticles were fabricated by pulsed laser ablation of tungsten target using the first harmonic of a Nd:YAG laser (1064 nm) in deionized water. After ablation, a 0.33 g/lit HAuCl_4 aqueous solution was added into as-prepared colloidal nanoparticles. In this process, Au"3"+ ions were reduced to decorate gold metallic state (Au"0) onto colloidal tungsten oxide nanoparticles surface. The morphology and chemical composition of the synthesized nanoparticles were studied by AFM, XRD, TEM and XPS techniques. UV–Vis analysis reveals a distinct absorption peak at ∼530 nm. This peak can be attributed to the surface plasmon resonance (SPR) of Au and confirms formation of gold state. Moreover, X-ray photoelectron spectroscopy reveals that Au ions’ reduction happens after adding HAuCl_4 solution into as-prepared colloidal tungsten oxide nanoparticles. Transmission electron microscope shows that an Au shell has been decorated onto colloidal WO_3 nanoparticles. Noble metal decorated tungsten oxide nanostructure could be an excellent candidate for photocatalysis, gas sensing and gasochromic applications. Finally, the gasochromic behavior of the synthesized samples was investigated by H_2 and O_2 gases bubbling into the produced colloidal Au/WO_3 nanoparticles. Synthesized colloidal nanoparticles show excellent coloration contrast (∼80%) through NIR spectra.

Thin film ionic conductors based on cerium oxide

International Nuclear Information System (INIS)

Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

1994-01-01

Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

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Maryam Siadat

2009-11-01

Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

International Nuclear Information System (INIS)

Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

2011-01-01

Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

Oxidation of scandium thin films on tungsten surface

International Nuclear Information System (INIS)

Gorodetskij, D.A.; Martynyuk, A.V.

1988-01-01

Presence of Sc on the surface of W in amounts larger than a monolayer coverage leads to a decrease of the work function at the initial oxidation stage, which is attributed to oxygen implantation into the surface layer of the metal. A subsequent oxidation is followed by the formation on the surface of a thin oxide layer and an increase of the work function. An increase of the amount of Sc deposited on the surface before the oxidation decreases the work function of the obtained oxide from 5.8 (clean W surface) down to 3.3 eV (thick Sc layer on W)

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

Science.gov (United States)

Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

2013-05-01

WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

The origin of stress in sputter-deposited tungsten films for x-ray masks

International Nuclear Information System (INIS)

Itoh, M.; Hori, M.; Nadahara, S.

1991-01-01

The mechanism for the cause of stress in a sputter-deposited tungsten (W) film has been clarified. The tensile stress of the film was calculated using the interatomic forces acting on the grain boundary. The average distance of the grain boundary gaps was determined from the measured film density assuming the film had homogeneous size rectangular grains. The calculated and measured stress values were in good agreement in the high working gas pressure region. The difference between these values in the low working gas pressure region has been able to be explained by the compressive stress due to the peening effect of Ar. The low stress in the high pressure region was obtained by large opened grain boundaries which produced low film density. A low film density causes a low x-ray stopping power. The film deposited in the low pressure region is suitable as an x-ray absorber because of its high film density

Crystallization kinetics of amorphous aluminum-tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

1999-01-01

Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

Synthesis, Consolidation and Characterization of Sol-gel Derived Tantalum-Tungsten Oxide Thermite Composites

Energy Technology Data Exchange (ETDEWEB)

Cervantes, O [Univ. of California, Davis, CA (United States)

2010-06-01

Energetic composite powders consisting of sol-gel (SG) derived nanostructured tungsten oxide were produced with various amounts of micrometer-scale tantalum fuel metal. Such energetic composite powders were ignition-tested and results show that the powders are not sensitive to friction, spark and/or impact ignition. Initial consolidation experiments, using the High Pressure Spark Plasma Sintering (HPSPS) technique, on the SG derived nanostructured tungsten oxide produced samples with higher relative density than can be achieved with commercially available tungsten oxide. The SG derived nanostructured tungsten oxide with immobilized tantalum fuel metal (Ta - WO3) energetic composite was consolidated to a density of 9.17 g·cm-3 or 93% relative density. In addition, those samples were consolidated without significant pre-reaction of the constituents, thus retaining their stored chemical energy.

Simulation on Mechanical Properties of Tungsten Carbide Thin Films Using Monte Carlo Model

Directory of Open Access Journals (Sweden)

Liliam C. Agudelo-Morimitsu

2012-12-01

Full Text Available The aim of this paper is to study the mechanical behavior of a system composed by substrate-coating using simulation methods. The contact stresses and the elastic deformation were analyzed by applying a normal load to the surface of the system consisting of a tungsten carbide (WC thin film, which is used as a wear resistant material and a stainless steel substrate. The analysis is based on Monte Carlo simulations using the Metropolis algorithm. The phenomenon was simulated from a fcc facecentered crystalline structure, for both, the coating and the substrate, assuming that the uniaxial strain is taken in the z-axis. Results were obtained for different values of normal applied load to the surface of the coating, obtaining the Strain-stress curves. From this curve, the Young´s modulus was obtained with a value of 600 Gpa, similar to the reports.

Electrochromism in surface modified crystalline WO3 thin films grown by reactive DC magnetron sputtering

Science.gov (United States)

Karuppasamy, A.

2013-10-01

In the present work, tungsten oxide thin films were deposited at various oxygen chamber pressures (1.0-5.0 × 10-3 mbar) by maintaining the sputtering power density and argon pressure constant at 3.0 W/cm2 and 1.2 × 10-2 mbar, respectively. The role of surface morphology and porosity on the electrochromic properties of crystalline tungsten oxide thin films has been investigated. XRD and Raman studies reveal that all the samples post annealed at 450 ̊C in air for 3.0 h settle in monoclinic crystal system of tungsten oxide (W18O49). Though the phase of material is indifferent to oxygen pressure variations (PO2), morphology and film density shows a striking dependence on PO2. A systematic study on plasma (OES), morphology, optical and electrochromic properties of crystalline tungsten oxide reveal that the films deposited at PO2 of 2.0 × 10-3 mbar exhibit better coloration efficiency (58 cm2/C), electron/ion capacity (Qc: -25 mC/cm2), and reversibility (92%). This is attributed to the enhanced surface properties like high density of pores and fine particulates (100 nm) and to lesser bulk density of the film (ρ/ρo = 0.84) which facilitates the process of intercalation/de-intercalation of protons and electrons. These results show good promise toward stable and efficient crystalline tungsten oxide based electrochromic device applications.

Mesoporous silicon oxide films and their uses as templates in obtaining nanostructured conductive polymers

Science.gov (United States)

Salgado, R.; Arteaga, G. C.; Arias, J. M.

2018-04-01

Obtaining conductive polymers (CPs) for the manufacture of OLEDs, solar cells, electrochromic devices, sensors, etc., has been possible through the use of electrochemical techniques that allow obtaining films of controlled thickness with positive results in different applications. Current trends point towards the manufacture of nanomaterials, and therefore it is necessary to develop methods that allow obtaining CPs with nanostructured morphology. This is possible by using a porous template to allow the growth of the polymeric materials. However, prior and subsequent treatments are required to separate the material from the template so that it can be evaluated in the applications mentioned above. This is why mesoporous silicon oxide films (template) are essential for the synthesis of nanostructured polymers since both the template and the polymer are obtained on the electrode surface, and therefore it is not necessary to separate the material from the template. Thus, the material can be evaluated directly in the applications mentioned above. The dimensions of the resulting nanostructures will depend on the power, time and technique used for electropolymerization as well as the monomer and the surfactant of the mesoporous film.

Selective hydrodeoxygenation of cyclic vicinal diols to cyclic alcohols over tungsten oxide-palladium catalysts.

Science.gov (United States)

Amada, Yasushi; Ota, Nobuhiko; Tamura, Masazumi; Nakagawa, Yoshinao; Tomishige, Keiichi

2014-08-01

Hydrodeoxygenation of cyclic vicinal diols such as 1,4-anhydroerythritol was conducted over catalysts containing both a noble metal and a group 5-7 transition-metal oxide. The combination of Pd and WOx allowed the removal of one of the two OH groups selectively. 3-Hydroxytetrahydrofuran was obtained from 1,4-anhydroerythritol in 72 and 74% yield over WOx -Pd/C and WOx -Pd/ZrO2 , respectively. The WOx -Pd/ZrO2 catalyst was reusable without significant loss of activity if the catalyst was calcined as a method of regeneration. Characterization of WOx -Pd/C with temperature-programmed reduction, X-ray diffraction, and transmission electron microscopy/energy-dispersive X-ray spectroscopy suggested that Pd metal particles approximately 9 nm in size were formed on amorphous tungsten oxide particles. A reaction mechanism was proposed on the basis of kinetics, reaction results with tungsten oxides under an atmosphere of Ar, and density functional theory calculations. A tetravalent tungsten center (W(IV) ) was formed by reduction of WO3 with the Pd catalyst and H2 , and this center served as the reductant for partial hydrodeoxygenation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of Iron and Tungsten Based Oxygen Carriers for Hydrogen Production Using Chemical Looping Reforming

Science.gov (United States)

Khan, M. N.; Shamim, T.

2017-08-01

Hydrogen production by using a three reactor chemical looping reforming (TRCLR) technology is an innovative and attractive process. Fossil fuels such as methane are the feedstocks used. This process is similar to a conventional steam-methane reforming but occurs in three steps utilizing an oxygen carrier. As the oxygen carrier plays an important role, its selection should be done carefully. In this study, two oxygen carrier materials of base metal iron (Fe) and tungsten (W) are analysed using a thermodynamic model of a three reactor chemical looping reforming plant in Aspen plus. The results indicate that iron oxide has moderate oxygen carrying capacity and is cheaper since it is abundantly available. In terms of hydrogen production efficiency, tungsten oxide gives 4% better efficiency than iron oxide. While in terms of electrical power efficiency, iron oxide gives 4.6% better results than tungsten oxide. Overall, a TRCLR system with iron oxide is 2.6% more efficient and is cost effective than the TRCLR system with tungsten oxide.

Study on tribological behavior and cutting performance of CVD diamond and DLC films on Co-cemented tungsten carbide substrates

International Nuclear Information System (INIS)

Zhang Dongcan; Shen Bin; Sun Fanghong

2010-01-01

The tribological behaviors of diamond and diamond-like carbon (DLC) films play a major role on their machining and mechanical applications. In this study, diamond and diamond-like carbon (DLC) films are deposited on the cobalt cemented tungsten carbide (WC-Co) substrate respectively adopting the hot filament chemical vapor deposition (HFCVD) technique and the vacuum arc discharge with a graphite cathode, and their friction properties are evaluated on a reciprocating ball-on-plate tribometer with counterfaces of silicon nitride (Si 3 N 4 ) ceramic, cemented tungsten carbide (WC) and ball-bearing steel materials, under the ambient air without lubricating condition. Moreover, to evaluate their cutting performance, comparative turning tests are conducted using the uncoated WC-Co and as-fabricated CVD diamond and DLC coated inserts, with glass fiber reinforced plastics (GFRP) composite materials as the workpiece. The as-deposited HFCVD diamond and DLC films are characterized with energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction spectroscopy (XRD), Raman spectroscopy and 3D surface topography based on white-light interferometry. Furthermore, Rocwell C indentation tests are conducted to evaluate the adhesion of HFCVD diamond and DLC films grown onto WC-Co substrates. SEM and 3D surface topography based on white-light interferometry are also used to investigate the worn region on the surfaces of diamond and DLC films. The friction tests suggest that the obtained friction coefficient curves that of various contacts exhibit similar evolution tendency. For a given counterface, DLC films present lower stable friction coefficients than HFCVD diamond films under the same sliding conditions. The cutting tests results indicate that flank wear of the HFCVD diamond coated insert is lower than that of DLC coated insert before diamond films peeling off.

Plasma etching of patterned tungsten

International Nuclear Information System (INIS)

Franssila, S.

1993-01-01

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

Optical and structural properties of FeSe2 thin films obtained by selenization of sprayed amorphous iron oxide films

International Nuclear Information System (INIS)

Ouertani, B.; Ouerfelli, J.; Saadoun, M.; Zribi, M.; Rabha, M.Ben; Bessais, B.; Ezzaouia, H.

2006-01-01

We report in this work the optical and structural properties of iron diselenide films (FeSe 2 ) obtained by selenization under vacuum of amorphous iron oxide films predeposited by spray pyrolysis. The structure of the FeSe 2 films was investigated by scanning electron microscopy (SEM), microprobe analyses, atomic force microscopy (AFM) and X-ray diffraction (XRD). XRD and micro-probe analyses showed that FeSe 2 as well as FeSe 2-x phases begin to appear at a selenization temperature of 500 deg. C. As the selenization temperature rises, the iron diselenide films become more stoichiometric with a dominance of the FeSe 2 phase. At 550 deg. C, a single FeSe 2 phase having good crystallinity was obtained. At 600 deg. C, two phases were detected: the major one corresponds to Fe 3 O 4 , and the minor one to FeSe 2 . SEM surface views show that FeSe 2 films have granular structure with small spherical crystallites. However, layered and clustered FeSe 2 films were found, respectively, at 550 deg. C and 600 deg. C. Absorption measurements show that iron diselenide films have a direct and an indirect gaps of about 1.03 eV and 0.3 eV, which were suggested to be due to the stoichiometric FeSe 2 phase and to a Fe-rich non-stoichiometric phase, respectively

Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

International Nuclear Information System (INIS)

Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

2017-01-01

Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

High Purity Tungsten Spherical Particle Preparation From WC-Co Spent Hard Scrap

Directory of Open Access Journals (Sweden)

Han Chulwoong

2015-06-01

Full Text Available Tungsten carbide-cobalt hard metal scrap was recycled to obtain high purity spherical tungsten powder by a combined hydrometallurgy and physical metallurgy pathway. Selective leaching of tungsten element from hard metal scrap occurs at solid / liquid interface and therefore enlargement of effective surface area is advantageous. Linear oxidation behavior of Tungsten carbide-cobalt and the oxidized scrap is friable to be pulverized by milling process. In this regard, isothermally oxidized Tungsten carbide-cobalt hard metal scrap was mechanically broken into particles and then tungsten trioxide particle was recovered by hydrometallurgical method. Recovered tungsten trioxide was reduced to tungsten particle in a hydrogen environment. After that, tungsten particle was melted and solidified to make a spherical one by RF (Ratio Frequency thermal plasma process. Well spherical tungsten micro-particle was successfully obtained from spent scrap. In addition to the morphological change, thermal plasma process showed an advantage for the purification of feedstock particle.

On-chip microplasma reactors using carbon nanofibres and tungsten oxide nanowires as electrodes

NARCIS (Netherlands)

Agiral, A.; Groenland, A.W.; Chinthaginjala, J.K.; Kumar Chinthaginjala, J.; Seshan, Kulathuiyer; Lefferts, Leonardus; Gardeniers, Johannes G.E.

2008-01-01

Carbon nanofibres (CNFs) and tungsten oxide (W18O49) nanowires have been incorporated into a continuous flow type microplasma reactor to increase the reactivity and efficiency of the barrier discharge at atmospheric pressure. CNFs and tungsten oxide nanowires were characterized by high-resolution

High-temperature oxidation of tungsten covered by layer of glass-enamel melt

International Nuclear Information System (INIS)

Vasnetsova, V.B.; Shardakov, N.T.; Kudyakov, V.Ya.; Deryabin, V.A.

1997-01-01

Corrosion losses of tungsten covered by the layer of glass-enamel melt were determined at 800, 850, 900, 950 deg C. It is shown that the rate of high-temperature oxidation of tungsten decreases after application of glass-enamel melt on its surface. This is probably conditioned by reduction of area of metal interaction with oxidizing atmosphere

Quasi physisorptive two dimensional tungsten oxide nanosheets with extraordinary sensitivity and selectivity to NO2.

Science.gov (United States)

Khan, Hareem; Zavabeti, Ali; Wang, Yichao; Harrison, Christopher J; Carey, Benjamin J; Mohiuddin, Md; Chrimes, Adam F; De Castro, Isabela Alves; Zhang, Bao Yue; Sabri, Ylias M; Bhargava, Suresh K; Ou, Jian Zhen; Daeneke, Torben; Russo, Salvy P; Li, Yongxiang; Kalantar-Zadeh, Kourosh

2017-12-14

Attributing to their distinct thickness and surface dependent physicochemical properties, two dimensional (2D) nanostructures have become an area of increasing interest for interfacial interactions. Effectively, properties such as high surface-to-volume ratio, modulated surface activities and increased control of oxygen vacancies make these types of materials particularly suitable for gas-sensing applications. This work reports a facile wet-chemical synthesis of 2D tungsten oxide nanosheets by sonication of tungsten particles in an acidic environment and thermal annealing thereafter. The resultant product of large nanosheets with intrinsic substoichiometric properties is shown to be highly sensitive and selective to nitrogen dioxide (NO 2 ) gas, which is a major pollutant. The strong synergy between polar NO 2 molecules and tungsten oxide surface and also abundance of active surface sites on the nanosheets for molecule interactions contribute to the exceptionally sensitive and selective response. An extraordinary response factor of ∼30 is demonstrated to ultralow 40 parts per billion (ppb) NO 2 at a relatively low operating temperature of 150 °C, within the physisorption temperature band for tungsten oxide. Selectivity to NO 2 is demonstrated and the theory behind it is discussed. The structural, morphological and compositional characteristics of the synthesised and annealed materials are extensively characterised and electronic band structures are proposed. The demonstrated 2D tungsten oxide based sensing device holds the greatest promise for producing future commercial low-cost, sensitive and selective NO 2 gas sensors.

On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

Science.gov (United States)

Kronawitter, Coleman Xaver

Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

Science.gov (United States)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Advanced smart tungsten alloys for a future fusion power plant

Science.gov (United States)

Litnovsky, A.; Wegener, T.; Klein, F.; Linsmeier, Ch; Rasinski, M.; Kreter, A.; Tan, X.; Schmitz, J.; Mao, Y.; Coenen, J. W.; Bram, M.; Gonzalez-Julian, J.

2017-06-01

The severe particle, radiation and neutron environment in a future fusion power plant requires the development of advanced plasma-facing materials. At the same time, the highest level of safety needs to be ensured. The so-called loss-of-coolant accident combined with air ingress in the vacuum vessel represents a severe safety challenge. In the absence of a coolant the temperature of the tungsten first wall may reach 1200 °C. At such a temperature, the neutron-activated radioactive tungsten forms volatile oxide which can be mobilized into atmosphere. Smart tungsten alloys are being developed to address this safety issue. Smart alloys should combine an acceptable plasma performance with the suppressed oxidation during an accident. New thin film tungsten-chromium-yttrium smart alloys feature an impressive 105 fold suppression of oxidation compared to that of pure tungsten at temperatures of up to 1000 °C. Oxidation behavior at temperatures up to 1200 °C, and reactivity of alloys in humid atmosphere along with a manufacturing of reactor-relevant bulk samples, impose an additional challenge in smart alloy development. First exposures of smart alloys in steady-state deuterium plasma were made. Smart tungsten-chroimium-titanium alloys demonstrated a sputtering resistance which is similar to that of pure tungsten. Expected preferential sputtering of alloying elements by plasma ions was confirmed experimentally. The subsequent isothermal oxidation of exposed samples did not reveal any influence of plasma exposure on the passivation of alloys.

Structure of tungsten electrodeposited from oxide chloride-fluoride molten salts

International Nuclear Information System (INIS)

Pavlovskij, V.A.; Reznichenko, V.A.

1998-01-01

Investigation results on the influence of electrolysis parameters and electrolyte composition on tungsten cathode deposit structure are presented. The electrolysis was performed in NaCl-NaF-WO 3 molten salts using tungsten and tungsten coated molybdenum cathodes. Morphological and metallographic studies of tungsten crystals were carrier out. Tungsten deposits were obtained in the form of crystalline conglomerates, sponge and high dispersity powder

ZnO based transparent conductive oxide films with controlled type of conduction

Energy Technology Data Exchange (ETDEWEB)

Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

2014-11-28

The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

Review of WO3 thin film preparation for photoelectrochemical water splitting

International Nuclear Information System (INIS)

Ehsan Eftekhari; Mohammad Kassim

2009-01-01

Full text: Tungsten trioxide (WO 3 ), which is one of the most essential materials in our daily life has appeared as an excellent photo electrode material for environmental purification. The nano-size of WO 3 thin film water-splitting technology has great potential for environmentally friendly solar-hydrogen production for the future hydrogen economy. There are several methods for producing tungsten oxide film. In this review, we outlined several WO 3 thin film preparation methods such as doctor Bladding, sputtering, layer-by-layer brush painting, spray pyrolysis deposition, sol-gel and other methods. Here we compare the maximum photocurrent obtained, different condition for preparation of WO 3 thin film and characterization outcome. (author)

One-step inkjet printing of tungsten oxide-poly(3,4-ethylenedioxythiophene):polystyrene sulphonate hybrid film and its applications in electrochromic devices

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Thi-Thuy-Nga, E-mail: thuysnga@gmail.com; Chan, Chih-Yu; He, Ju-Liang

2016-03-31

Hybrid film comprised tungsten oxide and poly (3,4-ethylenedioxythiophene):polystyrene sulphonate (WO{sub 3}–PEDOT:PSS) was developed by applying one-step inkjet printing from an office inkjet printer. The WO{sub 3} nanoparticles were synthesized from commercial crystalline WO{sub 3} powder through a wet ball-milling process, which is a simple, environmentally friendly, and cost-effective method of using water as a green solvent and low-energy milling. The WO{sub 3}–PEDOT:PSS inkjet ink was prepared by dispersing the as-milled WO{sub 3} and PEDOT:PSS in n-propanol and deionized water. The inkjet-printed WO{sub 3}–PEDOT:PSS thin films show marked improvements of cathodic electrochromism over WO{sub 3} films: the transmittance change of 20% at 550 nm (visible region) and 35% at 900 nm (infrared region) along with the response time of 5.67/0.30 s in their colored/bleached state, and the electrochromic coloration efficiency of 27.86 cm{sup 2}/C at 550 nm and 69.64 cm{sup 2}/C at 900 nm. - Highlights: • WO{sub 3} nanoparticles were synthesized by milling commercial crystalline WO{sub 3}. • Wet ball-milling was carried out by using water as a green solvent and low energy. • WO{sub 3}–PEDOT:PSS hybrid ink was simply prepared by adding n-propanol and DI water. • WO{sub 3}–PEDOT:PSS hybrid films were inkjet-printed via an office inkjet printer. • WO{sub 3}–PEDOT:PSS films show better electrochromic performances than WO{sub 3} films.

Chemical vapour deposition of vanadium oxide thermochromic thin films

Science.gov (United States)

Piccirillo, Clara

Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

Closed-cage tungsten oxide clusters in the gas phase.

Science.gov (United States)

Singh, D M David Jeba; Pradeep, T; Thirumoorthy, Krishnan; Balasubramanian, Krishnan

2010-05-06

During the course of a study on the clustering of W-Se and W-S mixtures in the gas phase using laser desorption ionization (LDI) mass spectrometry, we observed several anionic W-O clusters. Three distinct species, W(6)O(19)(-), W(13)O(29)(-), and W(14)O(32)(-), stand out as intense peaks in the regular mass spectral pattern of tungsten oxide clusters suggesting unusual stabilities for them. Moreover, these clusters do not fragment in the postsource decay analysis. While trying to understand the precursor material, which produced these clusters, we found the presence of nanoscale forms of tungsten oxide. The structure and thermodynamic parameters of tungsten clusters have been explored using relativistic quantum chemical methods. Our computed results of atomization energy are consistent with the observed LDI mass spectra. The computational results suggest that the clusters observed have closed-cage structure. These distinct W(13) and W(14) clusters were observed for the first time in the gas phase.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

Energy Technology Data Exchange (ETDEWEB)

Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

International Nuclear Information System (INIS)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-01

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

International Nuclear Information System (INIS)

Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

2015-01-01

Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Suppression of cavitation in melted tungsten by doping with lanthanum oxide

International Nuclear Information System (INIS)

Yuan, Y.; Lu, G.H.; Xu, B.; Fu, B.Q.; Xu, H.Y.; Li, C.; Jia, Y.Z.; Qu, S.L.; Liu, W.; Greuner, H.; Böswirth, B.; Luo, G.-N.

2014-01-01

Melting and boiling behaviour of pure tungsten and 1 wt% lanthanum-oxide-doped tungsten (WL10) are investigated, focusing on the material selection with respect to material loss induced by cavitation. Melting experiments under high heat loads are carried out in the high heat flux facility GLADIS. Pulsed hydrogen neutral beams with heat flux of 10 and 23 MW m −2 are applied onto the adiabatically loaded samples for intense surface melting. Melt layer of the two tungsten grades exhibit different microstructure characteristics. Substantive voids owing to cavitation in the liquid phase are observed in pure W and lead to porous resolidified material. However, little cavitation bubbles can be found in the dense resolidified layer of WL10. In order to find out the gaseous sources, vapour collection is performed and the components are subsequently detected. Based on the observations and analyses, the microstructure evolutions corresponding to melting and vapourization behaviour of the two tungsten grades are tentatively described, and furthermore, the underlying mechanisms of cavitation in pure W and its suppression in WL10 are discussed. (paper)

Smart tungsten alloys as a material for the first wall of a future fusion power plant

Science.gov (United States)

Litnovsky, A.; Wegener, T.; Klein, F.; Linsmeier, Ch.; Rasinski, M.; Kreter, A.; Unterberg, B.; Coenen, J. W.; Du, H.; Mayer, J.; Garcia-Rosales, C.; Calvo, A.; Ordas, N.

2017-06-01

Tungsten is currently deemed as a promising plasma-facing material (PFM) for the future power plant DEMO. In the case of an accident, air can get into contact with PFMs during the air ingress. The temperature of PFMs can rise up to 1200 °C due to nuclear decay heat in the case of damaged coolant supply. Heated neutron-activated tungsten forms a volatile radioactive oxide which can be mobilized into the atmosphere. New self-passivating ‘smart’ alloys can adjust their properties to the environment. During plasma operation the preferential sputtering of lighter alloying elements will leave an almost pure tungsten surface facing the plasma. During an accident the alloying elements in the bulk are forming oxides thus protecting tungsten from mobilization. Good plasma performance and the suppression of oxidation are required for smart alloys. Bulk tungsten (W)-chroimum (Cr)-titanium (Ti) alloys were exposed together with pure tungsten (W) samples to the steady-state deuterium plasma under identical conditions in the linear plasma device PSI 2. The temperature of the samples was ~576 °C-715 °C, the energy of impinging ions was 210 eV matching well the conditions expected at the first wall of DEMO. Weight loss measurements demonstrated similar mass decrease of smart alloys and pure tungsten samples. The oxidation of exposed samples has proven no effect of plasma exposure on the oxidation resistance. The W-Cr-Ti alloy demonstrated advantageous 3-fold lower mass gain due to oxidation than that of pure tungsten. New yttrium (Y)-containing thin film systems are demonstrating superior performance in comparison to that of W-Cr-Ti systems and of pure W. The oxidation rate constant of W-Cr-Y thin film is 105 times less than that of pure tungsten. However, the detected reactivity of the bulk smart alloy in humid atmosphere is calling for a further improvement.

Process for recovering tungsten from alkaline leaching solution of tungsten ores

International Nuclear Information System (INIS)

Onozaki, S.; Nemoto, S.; Hazeyama, T.

1976-01-01

This invention relates to a process for recovering tungsten from an alkaline leaching solution of tungsten ores. This invention comprises adjusting the pH of an alkaline leaching solution which is obtained by lixiviating ore containing tungsten with an alkaline solution to 7--8 with acid to oxidize molybdic acid ions in the solution, adding a sulfide donor, then precipitating molybdenum sulfide compounds by adjusting the pH value of the solution to 2--3. Tungstic acid ions are recovered as calcium tungstate by the addition of a calcium ion donor after the molybdenum sulfide compounds are separated

Chemically produced nanostructured ODS-lanthanum oxide-tungsten composites sintered by spark plasma

International Nuclear Information System (INIS)

Yar, Mazher Ahmed; Wahlberg, Sverker; Bergqvist, Hans; Salem, Hanadi G.; Johnsson, Mats; Muhammed, Mamoun

2011-01-01

High purity W and W-0.9La 2 O 3 (wt.%) nanopowders were produced by a wet chemical route. The precursor was prepared by the reaction of ammonium paratungstate (APT) with lanthanum salt in aqueous solutions. High resolution electron microscopy investigations revealed that the tungstate particles were coated with oxide precipitates. The precursor powder was reduced to tungsten metal with dispersed lanthanum oxide. Powders were consolidated by spark plasma sintering (SPS) at 1300 and 1400 o C to suppress grain growth during sintering. The final grain size relates to the SPS conditions, i.e. temperature and heating rate, regardless of the starting powder particle size. Scanning electron microscopy revealed that oxide phases were mainly accumulated at grain boundaries while the tungsten matrix constituted of nanosized sub-grains. The transmission electron microscopy revealed that the tungsten grains consist of micron-scale grains and finer sub-grains. EDX analysis confirmed the presence of W in dispersed oxide phases with varying chemical composition, which evidenced the presence of complex oxide phases (W-O-La) in the sintered metals.

Tungsten - Yttrium Based Nuclear Structural Materials

Science.gov (United States)

Ramana, Chintalapalle; Chessa, Jack; Martinenz, Gustavo

2013-04-01

The challenging problem currently facing the nuclear science community in this 21st century is design and development of novel structural materials, which will have an impact on the next-generation nuclear reactors. The materials available at present include reduced activation ferritic/martensitic steels, dispersion strengthened reduced activation ferritic steels, and vanadium- or tungsten-based alloys. These materials exhibit one or more specific problems, which are either intrinsic or caused by reactors. This work is focussed towards tungsten-yttrium (W-Y) based alloys and oxide ceramics, which can be utilized in nuclear applications. The goal is to derive a fundamental scientific understanding of W-Y-based materials. In collaboration with University of Califonia -- Davis, the project is designated to demonstrate the W-Y based alloys, ceramics and composites with enhanced physical, mechanical, thermo-chemical properties and higher radiation resistance. Efforts are focussed on understanding the microstructure, manipulating materials behavior under charged-particle and neutron irradiation, and create a knowledge database of defects, elemental diffusion/segregation, and defect trapping along grain boundaries and interfaces. Preliminary results will be discussed.

Indium doped zinc oxide thin films obtained by electrodeposition

International Nuclear Information System (INIS)

Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

2005-01-01

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

Science.gov (United States)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

The structure of ultrathin iron films on tungsten single-crystal surfaces

International Nuclear Information System (INIS)

Gardiner, T.M.

1983-01-01

Ultrathin iron films vapour deposited onto the surface of a cylindrical tungsten single crystal are discussed. Results from work function change, Auger electron spectroscopic and low energy electron diffraction techniques are combined for a comparison of the initial stages of film growth on four low index planes. Advantage is taken of the opportunity to evaporate onto and simultaneously to make measurements on all surface orientations of the zone. (Auth.)

Tungsten Trioxide/Zinc Tungstate Bilayers: Electrochromic Behaviors, Energy Storage and Electron Transfer

International Nuclear Information System (INIS)

Wei, Huige; Ding, Daowei; Yan, Xingru; Guo, Jiang; Shao, Lu; Chen, Haoran; Sun, Luyi; Colorado, Henry A.; Wei, Suying; Guo, Zhanhu

2014-01-01

Highlights: • Tungsten oxide and zinc tungstate bilayers have been prepared via a facile sol-gel method for integrated applications of electrochromic behaviors and energy storage;. • Electron transfer behaviors between the semiconductor bilayer films have been found dependent on the bilayer assembly sequence;. • Methylene blue (MB) has been employed for the first time as an indicator to study the electron transfer phenomenon in the bilayer films. - Abstract: Pair-sequentially spin-coated tungsten trioxide (WO 3 ) and zinc tungstate (ZnWO 4 ) bilayer films onto indium tin oxide (ITO) coated glass slides have been prepared via sol-gel methods followed by annealing. The bilayers (ZnWO 4 /WO 3 denoting the bilayer film with the inner layer of ZnWO 4 and the outer layer of WO 3 on the ITO while WO 3 /ZnWO 4 standing for the bilayer film with the inner layer of WO 3 and the outer layer of ZnWO 4 on the ITO) exhibit integrated functions of electrochromic and energy storage behaviors as indicated by the in situ spectroelectrochemistry and cyclic voltammetry (CV) results. Accordingly, blue color was observed for the bilayer films at -1 V in 0.5 M H 2 SO 4 solution. An areal capacitance of 140 and 230 μF/cm 2 was obtained for the ZnWO 4 /WO 3 , and WO 3 /ZnWO 4 film, respectively, at a scan rate of 0.05 V/s in the CV measurements. The CV results also unveiled the electron transfer behavior between the semiconductor films in the oxidation process, suggesting a sequence-dependent electrochemical response in the bilayer films. Meanwhile, methylene blue (MB) was used as an indicator to study the electron transfer phenomenon during the reduction process at negative potentials of -0.4 and -0.8 V, in 0.5 M Na 2 SO 4 . The results indicated that the electrons transfer across the bilayers was enhanced at more negative potentials

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

Science.gov (United States)

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

International Nuclear Information System (INIS)

Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

2012-01-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

Elasticity Constants of a Two-Phase Tungsten Thin Film

Directory of Open Access Journals (Sweden)

Mohamed Fares Slim

2018-05-01

Full Text Available The IET was used to determine the macroscopic elasticity constants of the multiphase coating. In order to determine the macroscopic elasticity constants of the film firstly, a critical assessment of Young’s modulus determination was done by comparing all the models proposed in the literature. The best model was identified and a study was performed to identify and quantify the most influent factors on the global uncertainty. Secondly, an enhanced formulation to determine the shear modulus of coating by IET was developed. The methodology was applied on a tungsten thin film deposited by DC magnetron sputtering.

Tungsten anode tubes with K-edge filters for mammography

Energy Technology Data Exchange (ETDEWEB)

Beaman, S.; Lillicrap, S.C. (Wessex Regional Medical Physics Service, Bath (UK)); Price, J.L. (Jarvis Screening Centre, Guildford (UK))

1983-10-01

Optimum X-ray energies for mammography have previously been calculated using the maximum signal to noise ratio (SNR) per unit dose to the breast, or the minimum exposure for constant SNR. Filters having absorption edges at appropriate energy positions have been used to modify the shape of tungsten anode spectra towards the calculated optimum. The suitability of such spectra for practical use has been assessed by comparing the film image quality and the incident breast dose obtained using a K-edge filtered tungsten anode tube with that obtained using a molybdenum anode. Image quality has been assessed by using a 'random' phantom and by comparing mammograms where one breast was radiographed using a filtered tungsten anode tube and the other using a standard molybdenum anode unit. Relative breast doses were estimated from both ionisation chamber measurements with a phantom and thermoluminescent dosimetry measurements on the breast. Film image quality assessment indicated that the filtered tungsten anode tube gave results not significantly different from those obtained with a molybdenum anode tube for a tissue thickness of about 4 cm and which were better for larger breast thicknesses. Doses could be reduced to between one-half and one-third with the filtered tungsten anode tube.

Tungsten anode tubes with K-edge filters for mammography

International Nuclear Information System (INIS)

Beaman, S.; Lillicrap, S.C.; Price, J.L.

1983-01-01

Optimum X-ray energies for mammography have previously been calculated using the maximum signal to noise ratio (SNR) per unit dose to the breast, or the minimum exposure for constant SNR. Filters having absorption edges at appropriate energy positions have been used to modify the shape of tungsten anode spectra towards the calculated optimum. The suitability of such spectra for practical use has been assessed by comparing the film image quality and the incident breast dose obtained using a K-edge filtered tungsten anode tube with that obtained using a molybdenum anode. Image quality has been assessed by using a 'random' phantom and by comparing mammograms where one breast was radiographed using a filtered tungsten anode tube and the other using a standard molybdenum anode unit. Relative breast doses were estimated from both ionisation chamber measurements with a phantom and thermoluminescent dosimetry measurements on the breast. Film image quality assessment indicated that the filtered tungsten anode tube gave results not significantly different from those obtained with a molybdenum anode tube for a tissue thickness of abut 4 cm and which were better for larger breast thicknesses. Doses could be reduced to between one-half and one-third with the filtered tungsten anode tube. (U.K.)

Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

International Nuclear Information System (INIS)

Yen, J. J.; Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

2014-01-01

We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

2012-02-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

High-energy, high-rate consolidation of tungsten and tungsten-based composite powders

Energy Technology Data Exchange (ETDEWEB)

Raghunathan, S.K.; Persad, C.; Bourell, D.L.; Marcus, H.L. (Center for Materials Science and Engineering, Univ. of Texas, Austin (USA))

1991-01-20

Tungsten and tungsten-based heavy alloys are well known for their superior mechanical properties at elevated temperatures. However, unalloyed tungsten is difficult to consolidate owing to its very high melting temperature (3683 K). The additions of small amounts of low-melting elements such as iron, nickel, cobalt and copper, facilitate the powder processing of dense heavy alloys at moderate temperatures. Energetic high-current pulses have been used recently for powder consolidation. In this paper, the use of a homopolar generator as a power source to consolidate selected tungsten and tungsten-based alloys is examined. Various materials were consolidated including unalloyed tungsten, W-Nb, W-Ni, and tungsten heavy alloy with boron carbide. The effect of process parameters such as pressure and specific energy input on the consolidation of different alloy systems is described in terms of microstructure and property relationships. (orig.).

GENERATION, TRANSPORT AND DEPOSITION OF TUNGSTEN-OXIDE AEROSOLS AT 1000 C IN FLOWING AIR-STEAM MIXTURES.

Energy Technology Data Exchange (ETDEWEB)

GREENE,G.A.; FINFROCK,C.C.

2001-10-01

Experiments were conducted to measure the rates of oxidation and vaporization of pure tungsten rods in flowing air, steam and air-steam mixtures in laminar flow. Also measured were the downstream transport of tungsten-oxide condensation aerosols and their region of deposition, including plateout in the superheated flow tube, rainout in the condenser and ambient discharge which was collected on an array of sub-micron aerosol filters. The nominal conditions of the tests, with the exception of the first two tests, were tungsten temperatures of 1000 C, gas mixture temperatures of 200 C and wall temperatures of 150 C to 200 C. It was observed that the tungsten oxidation rates were greatest in all air and least in all steam, generally decreasing non-linearly with increasing steam mole fraction. The tungsten oxidation rates in all air were more than five times greater than the tungsten oxidation rates in all steam. The tungsten vaporization rate was zero in all air and increased with increasing steam mole fraction. The vaporization rate became maximum at a steam mole fraction of 0.85 and decreased thereafter as the steam mole fraction was increased to unity. The tungsten-oxide was transported downstream as condensation aerosols, initially flowing upwards from the tungsten rod through an 18-inch long, one-inch diameter quartz tube, around a 3.5-inch radius, 90{sup o} bend and laterally through a 24-inch horizontal run. The entire length of the quartz glass flow path was heated by electrical resistance clamshell heaters whose temperatures were individually controlled and measured. The tungsten-oxide plateout in the quartz tube was collected, nearly all of which was deposited at the end of the heated zone near the entrance to the condenser which was cold. The tungsten-oxide which rained out in the condenser as the steam condensed was collected with the condensate and weighed after being dried. The aerosol smoke which escaped the condenser was collected on the sub

Mechanical Properties of Oxide Films on Electrolytic In-process Dressing (ELID) Copper-based Grinding Wheel

Science.gov (United States)

Kuai, J. C.; Wang, J. W.; Jiang, C. R.; Zhang, H. L.; Yang, Z. B.

2018-05-01

The mechanical properties of oxide films on copper based grinding wheel were studied by nanoindentation technique. The analysis of load displacement shows that the creep phenomenon occurs during the loading stage. Results show that the oxide film and the matrix have different characteristics, and the rigidity of the copper based grinding wheel is 0.6-1.3mN/nm, which is weaker than that of the matrix; the hardness of the oxide film is 2000-2300MPa, which is higher than the matrix; and the elastic modulus of the oxide film is 100-120GPa, also higher than the matrix.

Effect of tungsten doping on catalytic properties of niobium oxide

Energy Technology Data Exchange (ETDEWEB)

Cardoso, Franciane P.; Nogueira, Andre E. [Departamento de Quimica, Universidade Federal de Lavras, Lavras-MG (Brazil); Patricio, Patricia S.O., E-mail: patriciapatricio@cefetmg.br [Centro Federal de Educacao Tecnologica, CEFET, Belo Horizonte, MG (Brazil); Oliveira, Luiz C.A. [Departamento de Quimica, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, MG (Brazil)

2012-04-15

A novel material based on niobia (Nb{sub 2}O{sub 5}) was synthesized to oxidize an organic compound in aqueous medium in the presence of H{sub 2}O{sub 2} after chemical modifications. Niobia was modified by doping with tungsten and also treating with H{sub 2}O{sub 2} in order to maximize the oxidative properties of this oxide. The analysis of the products from methylene blue dye oxidation with electro spray ionization mass spectrometry (ESI-MS) showed that the dye was successively oxidized to different intermediate compounds. The successive hydroxylation during this oxidation strongly suggests that highly reactive hydroxyl radicals are generated involving H{sub 2}O{sub 2} on the W-doped niobia grain surface. These results strongly suggest that the H{sub 2}O{sub 2} can regenerate in situ the peroxo group remaining active the system. (author)

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

Energy Technology Data Exchange (ETDEWEB)

Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

2017-01-15

Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

Science.gov (United States)

Harunsyah; Yunus, M.; Fauzan, Reza

2017-06-01

This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

Enhanced electrocatalytic activity of reduced graphene oxide-Os nanoparticle hybrid films obtained at a liquid/liquid interface

Science.gov (United States)

Bramhaiah, K.; Pandey, Indu; Singh, Vidya N.; Kavitha, C.; John, Neena S.

2018-03-01

Hybrid films of reduced graphene oxide-osmium nanoparticles (rGO-Os NPs) synthesized at a liquid/liquid interface are explored for their electrocatalytic activity towards the oxidation of rhodamine B (RhB), a popular colourant found in textile industry effluents and a non-permitted food colour. The free-standing nature of the films enables them to be lifted directly on to electrodes without the aid of any binders. The films consist of aggregates of ultra-small Os NPs interspersed with rGO layers. The hybrid film exhibits enhanced RhB oxidation when compared to its constituents arising from the synergic effect between rGO and Os NPs, Os contributing to electrocatalysis and rGO contributing to high surface area and conductance as well as stabilization of Os nanoparticles. The electrochemical sensor based on rGO-Os NP hybrid film on pencil graphite electrode shows a remarkable performance for the quantitative detection of RhB with a linear variation in a wide range of concentrations, 4-1300 ppb (8.3 nM-2.71 μM). The modified electrode presents good stability over more than 6 months, reproducibility and anti-interference capability. The use of developed sensor for adequate detection of RhB in real samples such as food samples and pen markers is also demonstrated.

Synergistic tungsten oxide/organic framework hybrid nanofibers for electrochromic device application

Science.gov (United States)

Dulgerbaki, Cigdem; Komur, Ali Ihsan; Nohut Maslakci, Neslihan; Kuralay, Filiz; Uygun Oksuz, Aysegul

2017-08-01

We report the first successful applications of tungsten oxide/conducting polymer hybrid nanofiber assemblies in electrochromic devices. Poly(3,4-ethylenedioxythiophene)/tungsten oxide (PEDOT/WO3) and polypyrrole/tungsten oxide (PPy/WO3) composites were prepared by an in situ chemical oxidative polymerization of monomers in different ionic liquids; 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF4), 1-butyl-3-methylimidazolium hexafluorophosphate (BMIMPF6), 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide (BMIMTFSI) and 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl) imide (BMPTFSI). Electrospinning process was used to form hybrid nanofibers from chemically synthesized nanostructures. The electrospun hybrid samples were compared from both morphological and electrochemical perspectives. Importantly, deposition of nanofibers from chemically synthesized hybrids can be achieved homogenously, on nanoscale dimensions. The morphologies of these assemblies were evaluated by SEM, whereas their electroactivity was characterized by cyclic voltammetry. Electrochromic devices made from hybrid nanofiber electrodes exhibited highest chromatic contrast of 37.66% for PEDOT/WO3/BMIMPF6, 40.42% for PPy/WO3/BMIMBF4 and show a strong electrochromic color change from transparent to light brown. Furthermore, the nanofiber devices exhibit outstanding stability when color switching proceeds, which may ensure a versatile platform for color displays, rear-view mirrors and smart windows.

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2005-01-01

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Visible light assisted nitrogen dioxide sensing using tungsten oxide - Graphene oxide nanocomposite sensors

Energy Technology Data Exchange (ETDEWEB)

Geng, Xin [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); You, Jiajun; Wang, Jie [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Zhang, Chao, E-mail: zhangc@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China)

2017-04-15

Tungsten oxide (WO{sub 3}) coatings were deposited by solution precursor plasma spray (SPPS) on alumina substrates. In order to enhance the NO{sub 2} sensing properties of the pure WO{sub 3} coatings at room temperature, illuminating with visible light and formation of p-n heterojunction were used. The SPPS WO{sub 3} coatings were modified by immersing them into a synthesized graphene oxide (GO) suspension to obtain the WO{sub 3}-GO composites. Raman and FTIR results demonstrated that p-n heterojunctions were successfully formed in the WO{sub 3}-GO composites. The UV–Vis spectra showed that the WO{sub 3}-GO composites had a longer visible light absorption range compared with the WO{sub 3} coatings. The sensors based on the WO{sub 3}-GO coatings exhibited ultra-high responses to NO{sub 2} at room temperature performed under visible light illumination. - Highlights: • Highly porous nanostructured WO{sub 3} coatings were deposited by SPPS process. • The WO{sub 3}-GO nanocomposites with p-n heterojunctions were successfully prepared. • The WO{sub 3}-GO nanocomposites exhibited ultra-high responses to 0.9 ppm NO{sub 2}. • The enhanced performance was ascribed to the fine structure and heterojunction.

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

International Nuclear Information System (INIS)

De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

2012-01-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Boltz, Janika

2011-12-12

-deposition annealing the suitable range of the process parameters for the preparation of transparent and conductive oxides is enlarged, the resistivity strongly decreased upon annealing at 300 C. Best results are obtained for an undoped SnO{sub 2} film with a minimum resistivity of 1.15 m{omega} cm after annealing at 300 C. At higher temperatures the resistivity increased due to stress and microstrain in the films.

Tungsten coatings electro-deposited on CFC substrates from oxide molten salt

Energy Technology Data Exchange (ETDEWEB)

Sun, Ningbo; Zhang, Yingchun, E-mail: zycustb@163.com; Lang, Shaoting; Jiang, Fan; Wang, Lili

2014-12-15

Tungsten is considered as plasma facing material in fusion devices because of its high melting point, its good thermal conductivity, its low erosion rate and its benign neutron activation properties. On the other hand, carbon based materials like C/C fiber composites (CFC) have been used for plasma facing materials (PFMs) due to their high thermal shock resistance, light weight and high strength. Tungsten coatings on CFC substrates are used in the JET divertor in the frame of the JET ITER-like wall project, and have been prepared by plasma spray (PS) and other techniques. In this study, tungsten coatings were electro-deposited on CFC from Na{sub 2}WO{sub 4}–WO{sub 3} molten salt under various deposition parameters at 900 °C in air. In order to obtain tungsten coatings with excellent performance, the effects of pulse duration ratio and pulse current density on microstructures and crystal structures of tungsten coatings were investigated by X-ray diffraction (XRD, Rigaku Industrial Co., Ltd., D/MAX-RB) and a scanning electron microscope (SEM, JSM 6480LV). It is found that the pulsed duration ratio and pulse current density had a significant influence on tungsten nucleation and electro-crystallization phenomena. SEM observation revealed that intact, uniform and dense tungsten coatings formed on the CFC substrates. Both the average grain size and thickness of the coating increased with the pulsed current density. The XRD results showed that the coatings consisted of a single phase of tungsten with the body centered cubic (BCC) structure. The oxygen content of electro-deposited tungsten coatings was lower than 0.05%, and the micro-hardness was about 400 HV.

SPH based modelling of oxide and oxide film formation in gravity die castings

International Nuclear Information System (INIS)

Ellingsen, K; M'Hamdi, M; Coudert, T

2015-01-01

Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

Vaporization of tungsten-metal in steam at high temperatures

International Nuclear Information System (INIS)

Greene, G.A.; Finfrock, C.C.

2000-01-01

The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate

Far-infrared spectroscopy of thermally annealed tungsten silicide films

International Nuclear Information System (INIS)

Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

1991-01-01

The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

Tungsten and molybdenum with oxide dispersion, production and properties

International Nuclear Information System (INIS)

Haerdtle, S.; Schmidberger, R.

1989-01-01

By the reaction spray process metal powders with dispersed metal oxides can be produced in one step. The systems investigated here are tungsten and molybdenum with 0,5% resp. 5% La 2 O 3 , Y 2 O 3 and ZrO 2 . The oxides with diameters below 0,5μm are finely dispersed within the metal powder particles. The sinterability of the powders depends on the oxide content. Maximum density at an oxide content of 0,5% is about 96% at a sintering temperature of 1600 0 C. The type of oxide influences the densification versus temperature but not the final density. 5 refs., 11 figs. (Author)

On the mechanism of self-deceleration of the thin oxide film growth

CERN Document Server

Mukhambetov, D G

2002-01-01

The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO{sub 2}/TiWO{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan [Department of Electronic Engineering, National Quemoy University, 1 Daxue Road, Jinning Township, Kinmen 89250, Taiwan, ROC (China); Zhao, Yu-Xiang [Department of Computer Science and Information Engineering, National Quemoy University, Taiwan, ROC (China); Chang, Julian; Yang, Shu-Yi [Department of Applied English, National Quemoy University, Taiwan, ROC (China); Han, Sheng, E-mail: shenghan@nutc.edu.tw [Center for General Education, National Taichung University of Science and Technology, 129 San-min Road, Section 3, Taichung 40401, Taiwan, ROC (China)

2016-08-15

Highlights: • TiO{sub 2}/TiWO{sub x} films were fabricated by a bipolar pulsed magnetron sputtering apparatus. • Titanium oxide being sputtered tungsten enhanced the highly oriented of TiO{sub 2} (1 0 1) plane of the specimen assemblies. • The mechanism WO{sub 3}(h{sup +}, e{sup −})/TiO{sub 2}(h{sup +}, e{sup −}) → WO{sub 3}(e{sup −})/TiO{sub 2}(h{sup +}) shows the higher hydrophilicity and lower contact angle. - Abstract: Titanium oxide films were formed by sputtering and then TiWO{sub x} films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO{sub 2} (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole–electron recombination, enhancing hydrophilicity and reducing the contact angle.

Mechanism of the electrochemical hydrogen reaction on smooth tungsten carbide and tungsten electrodes

International Nuclear Information System (INIS)

Wiesener, K.; Winkler, E.; Schneider, W.

1985-01-01

The course of the electrochemical hydrogen reaction on smooth tungsten-carbide electrodes in hydrogen saturated 2.25 M H 2 SO 4 follows a electrochemical sorption-desorption mechanism in the potential range of -0.4 to +0.1 V. At potentials greater than +0.1 V the hydrogen oxidation is controlled by a preliminary chemical sorption step. Concluding from the similar behaviour of tungsten-carbide and tungsten electrodes after cathodic pretreatment, different tungsten oxides should be involved in the course of the hydrogen reaction on tungsten carbide electrodes. (author)

Tungsten deposition by hydrogen-atom reaction with tungsten hexafluoride

International Nuclear Information System (INIS)

Lee, W.W.

1991-01-01

Using gaseous hydrogen atoms with WF 6 , tungsten atoms can be produced in a gas-phase reaction. The atoms then deposit in a near-room temperature process, which results in the formation of tungsten films. The W atoms (10 10 -10 11 /cm 3 ) were measured in situ by atomic absorption spectroscopy during the CVD process. Deposited W films were characterized by Auger electron spectroscopy, Rutherford backscattering, and X-ray diffraction. The surface morphology of the deposited films and filled holes was studied using scanning electron microscopy. The deposited films were highly adherent to different substrates, such as Si, SiO 2 , Ti/Si, TiN/Si and Teflon. The reaction mechanism and kinetics were studied. The experimental results indicated that this method has three advantages compared to conventional CVD or PECVD: (1) film growth occurs at low temperatures; (2) deposition takes place in a plasma-free environment; and (3) a low level of impurities results in high-quality adherent films

Kinetics of low pressure chemical vapor deposition of tungsten silicide from dichlorocilane reduction of tungsten hexafluoride

International Nuclear Information System (INIS)

Srinivas, D.; Raupp, G.B.; Hillman, J.

1990-01-01

The authors report on experiments to determine the intrinsic surface reaction rate dependences and film properties' dependence on local reactant partial pressures and wafer temperature in low pressure chemical vapor deposition (LPCVD) of tungsten silicide from dichlorosilane reduction of tungsten hexafluoride. Films were deposited in a commercial-scale Spectrum CVD cold wall single wafer reactor under near differential, gradientless conditions. Over the range of process conditions investigated, deposition rate was found to be first order in dichlorosillane and negative second order in tungsten hexafluoride partial pressure. The apparent activation energy in the surface reaction limited regime was found to be 70-120 kcal/mol. The silicon to tungsten ratio of as deposited silicide films ranged from 1.1 to 2.4, and increased with increasing temperature and dichlorosillane partial pressure, and decreased with increasing tungsten hexafluoride pressure. These results suggest that the apparent silicide deposition rate and composition are controlled by the relative rates of at least two competing reactions which deposit stoichiometric tungsten silicides and/or silicon

Growth of single-crystal W whiskers during humid H2/N2 reduction of Ni, Fe-Ni, and Co-Ni doped tungsten oxide

International Nuclear Information System (INIS)

Wang Shiliang; He Yuehui; Zou Jou; Wang Yong; Huang Han

2009-01-01

Numbers of W whiskers were obtained by reducing Ni, Ni-Fe, and Ni-Co doped tungsten oxide in a mixed atmosphere of humid H 2 and N 2 . The phases and morphologies of the reduction products were characterized by XRD and SEM. Intensive TEM and EDS analyses showed that the obtained whiskers were W single crystals which typical have alloyed particles (Ni-W, Fe-Ni, or Co-Ni-W) at the growth tips. The formed W whiskers were presumed to be induced by the alloyed particles. Our experimental results revealed that, during the reduction process of tungsten oxide, the pre-reduced Ni, Fe-Ni, or Co-Ni particles not only served as nucleation aids for the initial growth of W phase from W oxide but also played the roles of catalysts during the reductive decomposition of gaseous WO 2 (OH) 2 .

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Cobalt oxide films for solar selective surfaces, obtained by spray pyrolisis

Energy Technology Data Exchange (ETDEWEB)

Avila G, A. [Departmento de Ingenieria Electrica, Seccion de Electronica del Estado Solido, CINVESTAV del I.P.N., Av. I.P.N. no. 2508, Ap. Postal 14-740, Mexico D. F., 07360 (Mexico); Barrera C, E. [Departamento de IPH, Area de Ingenieria en Recursos Energeticos, Universidad Autonoma Metropolitana-Iztapalapa, Ap. Postal 55-5340, Mexico, D. F. (Mexico); Huerta A, L.; Muhl, S. [Instituto de Investigaciones en Materiales, UNAM, Mexico, D.F. 04510 (Mexico)

2004-05-01

Cobalt oxide films upon stainless steel substrates were deposited by using the pneumatic spray pyrolisis technique, starting from an inorganic salt (CoNO{sub 3}{center_dot}3H{sub 2}O) dissolved in a water-alcohol mixture. Stainless steel and nickeled stainless steel substrates were used. Absorptance and emittance, for selective surface applications, were evaluated from reflectance measurements in the UV-Vis and infrared ranges. X-ray diffraction, XPS and AFM measurements were done. The predominant cobalt phase is Co{sub 3}O{sub 4}, but also CoO and Co{sub 2}O{sub 3} phases, besides metallic cobalt, were detected. Films upon nickeled steel substrates at 400C exhibit high absorptances (0.86), but also the emittance is high (0.43), yielding a selectivity of 2.0. A similar film on steel substrate reaches only a figure of 0.77 absorptance, but the thermal emittance remains low (0.20), giving a selectivity of 3.85. These films are good prospects for selective solar absorption coatings.

Low-cost fabrication of WO{sub 3} films using a room temperature and low-vacuum air-spray based deposition system for inorganic electrochromic device applications

Energy Technology Data Exchange (ETDEWEB)

Park, Sung-Ik [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Kim, Sooyeun, E-mail: sooyeunk@u.washington.edu [Department of Mechanical Engineering, University of Washington, Seattle, WA (United States); Choi, Jung-Oh; Song, Ji-Hyeon [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Taya, Minoru [Department of Mechanical Engineering, University of Washington, Seattle, WA (United States); Ahn, Sung-Hoon, E-mail: ahnsh@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Institute of Advanced Machines and Design, Seoul (Korea, Republic of)

2015-08-31

We report the deposition of tungsten oxide (WO{sub 3}) thin films on fluorine-doped tin oxide (FTO) and indium-doped tin oxide (ITO) glass substrates by using a room-temperature deposition system based on low-vacuum air-spray for the fabrication of inorganic electrochromic windows. The structure of the WO{sub 3} films was characterized using X-ray diffraction, and the surface morphology and film thickness were investigated using scanning electron microscopy and atomic force microscopy. The color of the prepared WO{sub 3} films changed from slight yellow to dark blue under applied voltages, demonstrating electrochromism. The WO{sub 3} film coated FTO glass exhibited a large electrochromic contrast of up to 50% at a wavelength of 800 nm. The electrochemical properties of the films were examined using cyclic voltammetry and chronocoulometry. - Highlights: • WO{sub 3} thin films were fabricated using an air-spray based deposition system at room temperature under low-vacuum conditions. • Dry WO{sub 3} particles were directly deposited on FTO and ITO glasses by using a low-cost deposition system. • The FTO glass based WO{sub 3} film showed the optical contrast of 50% at a wavelength of 800 nm.

Tungsten oxide coatings deposited by plasma spray using powder and solution precursor for detection of nitrogen dioxide gas

Energy Technology Data Exchange (ETDEWEB)

Zhang, Chao, E-mail: zhangc@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Wang, Jie [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Geng, Xin [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China)

2016-05-25

Increasing attention has been paid on preparation methods for resistive-type gas sensors based on semiconductor metal oxides. In this work, tungsten oxide (WO{sub 3}) coatings were prepared on alumina substrates and used as gas sensitive layers. The coatings were deposited by atmospheric plasma spray using powder, solution precursor, or a combination of both. Tungsten oxide powder through a powder port and ammonium tungstate aqueous solution through a liquid port were injected into plasma stream respectively or together to deposit WO{sub 3} coatings. Phase structures in the coatings were characterized by X-ray diffraction analyzer. The field-emission scanning electron microscopy images confirmed that the coatings were in microstructure, nanostructure or micro-nanostructure. The sensing properties of the sensors based on the coatings exposed to 1 ppm nitrogen dioxide gas were characterized in a home-made instrument. Sensing properties of the coatings were compared and discussed. The influences of gas humidity and working temperature on the sensor responses were further studied. - Highlights: • Porous gas sensitive coatings were deposited by plasma spray using powder and solution precursor. • Crystallized WO{sub 3} were obtained through hybrid plasma spray plus a pre-conditioned step. • Plasma power had an important influence on coating microstructure. • The particle size of atmospheric plasma-sprayed microstructured coating was stable. • Solution precursor plasma-sprayed WO{sub 3} coatings had nanostructure and showed good responses to 1 ppm NO{sub 2}.

Kinetics of the tungsten hexafluoride-silane reaction for the chemical vapor deposition of tungsten

International Nuclear Information System (INIS)

Gokce, Huseyin.

1991-01-01

In this study, the kinetics of the low-pressure chemical vapor deposition (LPCVD) of tungsten by silane reduction of tungsten hexafluoride on Si(100) surfaces was studied. A single-wafer, cold-wall reactor was sued for the experiments. The SiH 4 /WF 6 ratio was 1.0. The pressure and temperature range were 1-10 torr and 137-385 degree C, respectively. Kinetic data were obtained in the absence of mass-transfer effects. The film thicknesses were measured by gravimetry. Scanning electron microscopy (SEM), Auger electron spectroscopy (AES), x-ray diffraction (XRD), and resistivity measurements were used to analyze the W films. For the horizontal substrate position and 4-minute reaction times, the apparent activation energies were determined to be 0.35 eV/atom for 10 torr, 0.17 eV/atom for 3 torr, and 0.08 eV/atom for 1 torr. Lower temperatures and higher pressures produced porous films, while higher temperatures and lower pressures resulted in continuous films with smoother surfaces. As the Si-W interface, a W(110) preferential orientation was observed. As the W films grew thicker, W orientation switched from (110) to (100). Apparent activation energy seems to change with thickness

Study of Nb-oxide Nb-Pb film structures by tunnel scanning microscope

International Nuclear Information System (INIS)

Golyamina, E.M.; Troyanovskij, A.M.

1986-01-01

The surface of niobium films, which were earlier used to create niobium-niobium oxide-lead film structures on their base, was investigated, using tunnel scanning microscope. The results obtained agree well with the observed properties of these structures, containing josephson and tunnel junctions

Tungsten carbide and tungsten-molybdenum carbides as automobile exhaust catalysts

International Nuclear Information System (INIS)

Leclercq, L.; Daubrege, F.; Gengembre, L.; Leclercq, G.; Prigent, M.

1987-01-01

Several catalyst samples of tungsten carbide and W, Mo mixed carbides with different Mo/W atom ratios, have been prepared to test their ability to remove carbon monoxide, nitric oxide and propane from a synthetic exhaust gas simulating automobile emissions. Surface characterization of the catalysts has been performed by X-ray photoelectron spectroscopy (XPS) and selective chemisorption of hydrogen and carbon monoxide. Tungsten carbide exhibits good activity for CO and NO conversion, compared to a standard three-way catalyst based on Pt and Rh. However, this W carbide is ineffective in the oxidation of propane. The Mo,W mixed carbides are markedly different having only a very low activity. 9 refs.; 10 figs.; 5 tabs

Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering

International Nuclear Information System (INIS)

Ghen, G.S.; Liao, W.L.; Chen, S.T.; Su, W.C.; Lin, C.K.

2005-01-01

A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (P Ar ) of 1.33 x 10 -1 Pa mixed with a wide range of O 2 partial pressures (P O ) from 1.33 x 10 -4 to 4 x 10 -1 Pa, equivalent to P O -to-P Ar ratios (P O/Ar ) from 1 x 10 -3 to 3. The effect of varying P O/Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 deg. C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing P O/Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (P O/Ar ≤ 0.1), amorphous WO 2 (P O/Ar = 0.6) to amorphous WO 3 (P O/Ar ≥ 2). When annealed in argon atmosphere, the amorphous WO 2 and WO 3 exhibit a very different magnitude of crystallization temperature (T c ) and can be transformed, respectively, into monoclinic WO 2 (T c = 500 deg. C) and tetragonal WO 3 (T c = 700 deg. C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO 2 into a completely different phase (monoclinic WO 3 ) at a significantly reduced T c of 500 deg. C

Highly flexible sub-1 nm tungsten oxide nanobelts as efficient desulfurization catalysts.

Science.gov (United States)

He, Jie; Liu, Huiling; Xu, Biao; Wang, Xun

2015-03-01

Ultrathin tungsten oxide nanobelts are successfully synthesized via a facile solvothermal method. Sub-1 nm thickness and hydrophobic surface property endow the nanobelts with flexibility, viscosity, gelation, and good catalytic performance in oxidative desulfurization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of oxygen vacancies on the electronic and optical properties of tungsten oxide from first principles calculations

Science.gov (United States)

Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.; Ramana, Chintalapalle V.

2016-12-01

In this work, we investigated theoretically the role of oxygen vacancies on the electronic and optical properties of cubic, γ-monoclinic, and tetragonal phases of tungsten oxide (WO3) thin films. Following the examination of structural properties and stability of the bulk tungsten oxide polymorphs, we analyzed band structures and optical properties, applying density functional theory (DFT) and GW (Green's (G) function approximation with screened Coulomb interaction (W)) methods. Careful benchmarking of calculated band gaps demonstrated the importance of using a range-separated functional, where results for the pristine room temperature γ-monoclinic structure indicated agreement with experiment. Further, modulation of the band gap for WO3 structures with oxygen vacancies was quantified. Dielectric functions for cubic WO3, calculated at both the single-particle, essentially time-dependent DFT, as well as many-body GW-Bethe-Salpeter equation levels, indicated agreement with experimental data for pristine WO3. Interestingly, we found that introducing oxygen vacancies caused appearance of lower energy absorptions. A smaller refractive index was indicated in the defective WO3 structures. These predictions could lead to further experiments aimed at tuning the optical properties of WO3 by introducing oxygen vacancies, particularly for the lower energy spectral region.

Structure of the short-range atomic order of WO3 amorphous films

International Nuclear Information System (INIS)

Olevskij, S.S.; Sergeev, M.S.; Tolstikhina, A.L.; Avilov, A.S.; Shkornyakov, S.M.; Semiletov, S.A.

1984-01-01

To study the causes of electrochromism manifestation in thin tungsten oxide films, the structure of WO 3 amorphous films has been investigated. The films were obtained by three different methods: by W(CO) 6 tungsten carbonyl pyrolysis, by high-frequency ion-plasma sputtering of a target prepared by WO 3 powder sintering, and by WO 3 powder thermal evaporation. Monocrystalline wafers of silicon and sodium chloride were used as substrates. The structure of short-range order in WO 3 amorphous films varies versus, the method of preparation in compliance with the type of polyhedral elements, (WO 6 , WO 5 ) and with the character of their packing (contacts via edges or vertices). Manifestation of electroc ro mism in WO 3 films prepared by varions methods and having different structure of short-range order is supposed to be realized through various mechanisms. One cannot exclude a potential simultaneous effect of the two coloration mechanisms

Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

Directory of Open Access Journals (Sweden)

Mihaela Girtan

2017-05-01

Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

Nitridation of one-dimensional tungsten oxide nanostructures: Changes in structure and photoactivity

KAUST Repository

Varga, Tamás

2017-10-12

In the search for stable, visible light active photoelectrodes, hydrothermally synthesized tungsten oxide nanowires were modified via nitrogen incorporation into their structure. To this end, nanowires were heat-treated in ammonia/nitrogen atmosphere at different temperatures. This procedure caused transitions in their structure that were investigated along with the photoelectrochemical properties of the samples. Results were subsequently compared to the reference samples treated in inert nitrogen atmosphere. Morphological changes and structural transitions were followed by transmission and scanning electron microscopy and X-ray diffraction. Bandgap energies were determined from the UV–vis spectra of the materials, while photoelectrochemical properties were tested by linear sweep photovoltammetry and electrochemical impedance spectroscopy. Pristine tungsten oxide nanowires were first transformed into tungsten oxynitride and then tungsten nitride during high-temperature calcination in ammonia atmosphere. Electron microscopic investigation revealed that, along with phase transition, the initial fibrous morphology gradually converted into nanosheets. Simultaneously, bandgap energies significantly decreased in the calcination process, too. Photoelectrochemical measurements demonstrated that photoactivity in the treated samples was not improved by the decrease of the bandgap. This behavior might be explained with the deterioration of charge carrier transport properties of the materials due to the increased number of structural defects (acting as trap states), and current ongoing work aims to verify this notion.

Building up Graphene-Based Conductive Polymer Composite Thin Films Using Reduced Graphene Oxide Prepared by γ-Ray Irradiation

Directory of Open Access Journals (Sweden)

Siyuan Xie

2013-01-01

Full Text Available In this paper, reduced graphene oxide (RGO was prepared by means of γ-ray irradiation of graphene oxide (GO in a water/ethanol mix solution, and we investigated the influence of reaction parameters, including ethanol concentration, absorbed dose, and dose rate during the irradiation. Due to the good dispersibility of the RGO in the mix solution, we built up flexible and conductive composite films based on the RGO and polymeric matrix through facile vacuum filtration and polymer coating. The electrical and optical properties of the obtained composite films were tested, showing good electrical conductivity with visible transmittance but strong ultraviolet absorbance.

Electrochemical behavior of amorphous metal-silicon-carbon nanocomposites based on titanium or tungsten nanophase

International Nuclear Information System (INIS)

Pleskov, Yu.V.; Krotova, M.D.; Shupegin, M.L.; Bozhko, A.D.

2009-01-01

Electrode behavior of nanocomposite films containing titanium- or tungsten-based conducting nanophase embedded in dielectric silicon-carbon matrix, deposited onto glassceramics substrate, is studied by cyclic voltammetry and electrochemical impedance spectroscopy. As the films' resistivity decreases, their electrochemical behavior gradually changes from that of 'poor conductor' to the nearly metal-like behavior. In particular, the differential capacitance increases, the charge transfer in a model redox system [Fe(CN) 6 ] 3-/4- accelerates, which may be explained by the increasing number of metal-containing clusters at the film/electrolyte solution interface

The optical and electrochemical properties of electrochromic films: WO3+xV2O5

Science.gov (United States)

Li, Zhuying; Liu, Hui; Liu, Ye; Yang, Shaohong; Liu, Yan; Wang, Chong

2010-05-01

Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic films exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission. These films with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic films using magnetron sputter deposition tungsten oxide thin films and vanadium oxide doped tungsten-vanadium oxide thin films on ITO coated glass were investigated. From the UV region of the transmittance spectra, the optical band gap energy from the fundamental absorption edge can be determined. And the Cyclic voltammograms of these thin films in 1 mol LiClO4 propylene carbonate electrolyte (LIPC) were measured and analysed. The anode electrochromic V2O5 doped cathode electrochromic WO3 could make films colour changing while the transmittance of films keeped invariance. These performance characteristics make tungstenvanadium oxide colour changeably thin films are suitable for electrochromic windows applications.

New doped tungsten cathodes. Applications to power grid tubes

International Nuclear Information System (INIS)

Cachard, J. de; Cadoret, K; Martinez, L.; Veillet, D.; Millot, F.

2001-01-01

Thermionic emission behavior of tungsten/tungsten carbide modified with rare earth (La, Ce, Y) oxides is examined on account of suitability to deliver important current densities in a thermo-emissive set up and for long lifetime. Work functions of potential cathodes have been determined from Richardson plots for La 2 O 3 doped tungsten and for tungsten covered with variable compositions rare earth tungstates. The role of platinum layers covering the cathode was also examined. Given all cathodes containing mainly lanthanum oxides were good emitters, emphasis was put on service lifetime. Comparisons of lifetime in tungsten doped with rare earth oxides and with rare earth tungstates show that microstructure of the operating cathodes may play the major role in the research of very long lifetime cathodes. Based on these results, tests still running show lifetime compatible with power grid tubes applications. (author)

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Nanoencapsulation of Rose-Hip Oil Prevents Oil Oxidation and Allows Obtainment of Gel and Film Topical Formulations.

Science.gov (United States)

Contri, Renata V; Kulkamp-Guerreiro, Irene C; da Silva, Sheila Janine; Frank, Luiza A; Pohlmann, Adriana R; Guterres, Silvia S

2016-08-01

The rose-hip oil holds skin regenerating properties with applications in the dermatological and cosmetic area. Its nanoencapsulation might favor the oil stability and its incorporation into hydrophilic formulations, besides increasing the contact with the skin and prolonging its effect. The aim of the present investigation was to develop suitable rose-hip-oil-loaded nanocapsules, to verify the nanocapsule effect on the UV-induced oxidation of the oil and to obtain topical formulations by the incorporation of the nanocapsules into chitosan gel and film. The rose-hip oil (500 or 600 μL), polymer (Eudragit RS100®, 100 or 200 mg), and acetone (50 or 100 mL) contents were separately varied aiming to obtain an adequate size distribution. The results led to a combination of the factors acetone and oil. The developed formulation showed average diameter of 158 ± 6 nm with low polydispersity, pH of 5.8 ± 0.9, zeta potential of +9.8 ± 1.5 mV, rose-hip oil content of 54 ± 1 μL/mL and tendency to reversible creaming. No differences were observed in the nanocapsules properties after storage. The nanoencapsulation of rose-hip oil decreased the UVA and UVC oxidation of the oil. The chitosan gel and film containing rose-hip-oil-loaded nanocapsules showed suitable properties for cutaneous use. In conclusion, it was possible to successfully obtain rose-hip-oil-loaded nanocapsules and to confirm the nanocapsules effect in protecting the oil from the UV rays. The chitosan gel and film were considered interesting alternatives for incorporating the nanoencapsulated rose-hip oil, combining the advantages of the nanoparticles to the advantages of chitosan.

In-situ XPS analysis of oxidized and reduced plasma deposited ruthenium-based thin catalytic films

Science.gov (United States)

Balcerzak, Jacek; Redzynia, Wiktor; Tyczkowski, Jacek

2017-12-01

A novel in-situ study of the surface molecular structure of catalytically active ruthenium-based films subjected to the oxidation (in oxygen) and reduction (in hydrogen) was performed in a Cat-Cell reactor combined with a XPS spectrometer. The films were produced by the plasma deposition method (PEMOCVD). It was found that the films contained ruthenium at different oxidation states: metallic (Ru0), RuO2 (Ru+4), and other RuOx (Ru+x), of which content could be changed by the oxidation or reduction, depending on the process temperature. These results allow to predict the behavior of the Ru-based catalysts in different redox environments.

Thermoemission properties of tungsten with additions of rare earth oxides

International Nuclear Information System (INIS)

Gural'nik, N.I.; Evstifeev, V.V.; Imangulova, N.G.

1988-01-01

Thermoemission properties of tungsten with addition of rare earth oxides are studied in the superhigh vacuum set with oil-free pumping system. Electronic work function eφ is determined by the method of total saturation current. Temperature dependences are obtained of the work function for three types of cathodes: W+La 2 O 3 ; W+φ 2 O 3 and W+Dy 2 O 3 . It is stated, that the first two types eφ decreases approximately from 4.2 to 3.3 eV and from 4.5 to 3.8 eV, respectively, after activation at proper temperatures. These cathodes are the most effective ones at the temperature of 1700 (W+La 2 O 3 ) and 1900-2100 K (W+ φ 4 O 3 ). The work function of cathodes with addition of dysprosium oxide did not practically vary (4.55-4.3 eV) within the whole studied temperature interval (1500-2100 K)

Chitosan/graphene oxide biocomposite film from pencil rod

Science.gov (United States)

Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

2018-03-01

Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

Tungsten carbide/porous carbon composite as superior support for platinum catalyst toward methanol electro-oxidation

International Nuclear Information System (INIS)

Jiang, Liming; Fu, Honggang; Wang, Lei; Mu, Guang; Jiang, Baojiang; Zhou, Wei; Wang, Ruihong

2014-01-01

Graphical abstract: The WC nanoparticles are well dispersed in the carbon matrix. The size of WC nanoparticles is about 30 nm. It can be concluded that tungsten carbide and carbon composite was successfully prepared by the present synthesis conditions. - Highlights: • The WC/PC composite with high specific surface area was prepared by a simple way. • The Pt/WC/PC catalyst has superior performance toward methanol electro-oxidation. • The current density for methanol electro-oxidation is as high as 595.93 A g −1 Pt. • The Pt/WC/PC catalyst shows better durability and stronger CO electro-oxidation. • The performance of Pt/WC/PC is superior to the commercial Pt/C (JM) catalyst. - Abstract: Tungsten carbide/porous carbon (WC/PC) composites have been successfully synthesized through a surfactant assisted evaporation-induced-assembly method, followed by a thermal treatment process. In particular, WC/PC-35-1000 composite with tungsten content of 35% synthesized at the carbonized temperature of 1000 °C, exhibited a specific surface area (S BET ) of 457.92 m 2 g −1 . After loading Pt nanoparticles (NPs), the obtained Pt/WC/PC-35-1000 catalyst exhibits the highest unit mass electroactivity (595.93 A g −1 Pt) toward methanol electro-oxidation, which is about 2.6 times as that of the commercial Pt/C (JM) catalyst. Furthermore, the Pt/WC/PC-35-1000 catalyst displays much stronger resistance to CO poisoning and better durability toward methanol electrooxidation compared with the commercial Pt/C (JM) catalyst. The high electrocatalytic activity, strong poison-resistivity and good stability of Pt/WC/PC-35-1000 catalyst are attributed to the porous structures and high specific surface area of WC/PC support could facilitate the rapid mass transportation. Moreover, synergistic effect between WC and Pt NPs is favorable to the higher catalytic performance

Gas sensing of ruthenium implanted tungsten oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Tesfamichael, T., E-mail: t.tesfamichael@qut.edu.au [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Ahsan, M. [William A. Cook Australia, 95 Brandl Street Eight Mile Plains, Brisbane, QLD 4113 (Australia); Notarianni, M. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Groß, A.; Hagen, G.; Moos, R. [University of Bayreuth, Faculty of Engineering Science, Department of Functional Materials, Universitätsstr. 30, 95440 Bayreuth (Germany); Ionescu, M. [ANSTO, Institute for Environmental Research, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Bell, J. [Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

2014-05-02

Different amounts of Ru were implanted into thermally evaporated WO{sub 3} thin films by ion implantation. The films were subsequently annealed at 600 °C for 2 h in air to remove defects generated during the ion implantation. The Ru concentrations of four samples have been quantified by Rutherford Backscattering Spectrometry as 0.8, 5.5, 9 and 11.5 at.%. The un-implanted WO{sub 3} films were highly porous but the porosity decreased significantly after ion implantation as observed by Transmission Electron Microscopy and Scanning Electron Microscopy. The thickness of the films also decreased with increasing Ru-ion dose, which is mainly due to densification of the porous films during ion implantation. From Raman Spectroscopy two peaks at 408 and 451 cm{sup −1} (in addition to the typical vibrational peaks of the monoclinic WO{sub 3} phase) associated with Ru were observed. Their intensity increased with increasing Ru concentration. X-ray Photoelectron Spectroscopy showed a metallic state of Ru with binding energy of Ru 3d{sub 5/2} at 280.1 eV. This peak position remained almost unchanged with increasing Ru concentration. The resistances of the Ru-implanted films were found to increase in the presence of NO{sub 2} and NO with higher sensor response to NO{sub 2}. The effect of Ru concentration on the sensing performance of the films was not explicitly observed due to reduced film thickness and porosity with increasing Ru concentration. However, the results indicate that the implantation of Ru into WO{sub 3} films with sufficient film porosity and film thickness can be beneficial for NO{sub 2} sensing at temperatures in the range of 250 °C to 350 °C. - Highlights: • Densification of WO{sub 3} thin films has occurred after Ru ion implantation. • Thickness and porosity of the films decrease with increasing Ru ion dose. • The amount of oxygen vacancies and defects increases with increasing Ru ion dose. • Ru has shown a crucial role in enhancing sensor response

Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

Energy Technology Data Exchange (ETDEWEB)

De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

2012-08-01

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

Investigation of water content in electrolyte solution on electrochromic properties of WO3 thin Films

Directory of Open Access Journals (Sweden)

Zahra Abadi

2017-05-01

Full Text Available Tungsten oxide thin films were prepared by a cathodic electrodeposition method at -0.450 mV in order to investigate how water content affects their electrochromic properties. FESEM images exhibit that WO3 thin films consist of 65 nm uniform grains. Thin Films were electrochemically investigated in 0.1M LiClO4 in propylene carbonate electrolyte with and without 5vol% water content by cyclic voltammetry and chronoamperometry. The results indicate that tungsten oxide thin films exhibit faster switching time between coloration and bleaching states and also higher coloration efficiency in hydrated electrolyte.  

Amperometric Biosensor Based on Zirconium Oxide/Polyethylene Glycol/Tyrosinase Composite Film for the Detection of Phenolic Compounds.

Science.gov (United States)

Ahmad, Nor Monica; Abdullah, Jaafar; Yusof, Nor Azah; Ab Rashid, Ahmad Hazri; Abd Rahman, Samsulida; Hasan, Md Rakibul

2016-06-29

A phenolic biosensor based on a zirconium oxide/polyethylene glycol/tyrosinase composite film for the detection of phenolic compounds has been explored. The formation of the composite film was expected via electrostatic interaction between hexacetyltrimethylammonium bromide (CTAB), polyethylene glycol (PEG), and zirconium oxide nanoparticles casted on screen printed carbon electrode (SPCE). Herein, the electrode was treated by casting hexacetyltrimethylammonium bromide on SPCE to promote a positively charged surface. Later, zirconium oxide was mixed with polyethylene glycol and the mixture was dropped cast onto the positively charged SPCE/CTAB. Tyrosinase was further immobilized onto the modified SPCE. Characterization of the prepared nanocomposite film and the modified SPCE surface was investigated by scanning electron microscopy (SEM), Electrochemical Impedance Spectroscopy (EIS), and Cyclic voltamogram (CV). The developed biosensor exhibits rapid response for less than 10 s. Two linear calibration curves towards phenol in the concentrations ranges of 0.075-10 µM and 10-55 µM with the detection limit of 0.034 µM were obtained. The biosensor shows high sensitivity and good storage stability for at least 30 days.

Catalytic activity of tungsten carbide-carbon (WC@C) core-shell structured for ethanol electro-oxidation

Energy Technology Data Exchange (ETDEWEB)

Singla, Gourav, E-mail: gsinghla@gmail.com; Singh, K., E-mail: kusingh@thapar.edu; Pandey, O.P., E-mail: oppandey@thapar.edu

2017-01-15

In this study, carbon coated WC (WC@C) was synthesized through solvothermal reactions in the presence of reducing agent magnesium (Mg) by employing tungsten oxide (WO{sub 3}) as a precursor, acetone (C{sub 3}H{sub 6}O) as a carbon source. The formation of WC@C nano particles is confirmed by X-ray diffraction and Transmission electron microscopy. The thermal stability of the synthesized powder examined in air shows its stability up to 550 °C. In this method, in-situ produced outer carbon layer increase the surface area of materials which is 52.6 m{sup 2} g{sup −1} with pore volume 0.213 cm{sup 3} g{sup −1}. The Electrocatalytic activity of ethanol oxidation on a synthesized sample with and without Pt nano particles have been investigated using cyclic voltammetry (CV). The CV results show the enhancement in oxidation stability of WC@C in acidic media as well as better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles as compared to without Pt nano particles. - Highlights: • Tungsten carbide nano powder was synthesized using acetone as carbon source. • In-situ produced outer carbon layer increase the surface area of materials. • Mesoporous WC with surface areas 52.6 m{sup 2}/g obtained. • Pt modified WC powder showed higher electrochemical stability. • Better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles.

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

International Nuclear Information System (INIS)

Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

2013-01-01

Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

Performance and impedance studies of thin, porous molybdenum and tungsten electrodes for the alkali metal thermoelectric converter

Science.gov (United States)

Wheeler, B. L.; Williams, R. M.; Jeffries-Nakamura, B.; Lamb, J. L.; Loveland, M. E.; Bankston, C. P.; Cole, T.

1988-01-01

Columnar, porous, magnetron-sputtered molybdenum and tungsten films show optimum performance as alkali metal thermoelectric converter electrodes at thicknesses less than 1.0 micron when used with molybdenum or nickel current collector grids. Power densities of 0.40 W/sq cm for 0.5-micron molybdenum films at 1200 K and 0.35 W/sq cm for 0.5-micron tungsten films at 1180 K were obtained at electrode maturity after 40-90 h. Sheet resistances of magnetron sputter deposited films on sodium beta-double-prime-alumina solid electrolyte (BASE) substrates were found to increase very steeply as thickness is decreased below about 0.3-double-prime 0.4-micron. The ac impedance data for these electrodes have been interpreted in terms of contributions from the bulk BASE and the porous electrode/BASE interface. Voltage profiles of operating electrodes show that the total electrode area, of electrodes with thickness less than 2.0 microns, is not utilized efficiently unless a fairly fine (about 1 x 1 mm) current collector grid is employed.

Tungsten Oxide and Polyaniline Composite Fabricated by Surfactant-Templated Electrodeposition and Its Use in Supercapacitors

Directory of Open Access Journals (Sweden)

Benxue Zou

2014-01-01

Full Text Available Composite nanostructures of tungsten oxide and polyaniline (PANI were fabricated on carbon electrode by electrocodeposition using sodium dodecylbenzene sulfonate (SDBS as the template. The morphology of the composite can be controlled by changing SDBS surfactant and aniline monomer concentrations in solution. With increasing concentration of aniline in surfactant solution, the morphological change from nanoparticles to nanofibers was observed. The nanostructured WO3/PANI composite exhibited enhanced capacitive charge storage with the specific capacitance of 201 F g−1 at 1.28 mA cm−2 in large potential window of -0.5~ 0.65 V versus SCE compared to the bulk composite film. The capacitance retained about 78% when the sweeping potential rate increased from 10 to 150 mV/s.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

Oxidation behaviour of Ti2AIN films composed mainly of nanolaminated MAX phase.

Science.gov (United States)

Wang, Q M; Garkas, W; Renteria, A Flores; Leyens, C; Kim, K H

2011-10-01

In this paper, we reported the oxidation behaviour of Ti2AIN films on polycrystalline Al2O3 substrates. The Ti2AIN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 degrees C for 1 h. The Ti2AIN films exhibited excellent oxidation resistance and thermal stability at 600-900 degrees C in air. Very low mass gain was observed. At low temperature (600 degrees C), no oxide crystals were observed on film surface. Blade-like Theta-Al2O3 fine crystals formed on film surfaces at 700-800 degrees C. At high temperature (900 degrees C), firstly Theta-Al2O3 formed on film surface and then transformed into alpha-Al2O3. At 700-900 degrees C, a continuous Al2O3 layer formed on Ti2AIN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2AIN films was discussed based on the experimental results.

Synthesis of tungsten oxide, silver, and gold nanoparticles by radio frequency plasma in water

International Nuclear Information System (INIS)

Hattori, Yoshiaki; Nomura, Shinfuku; Mukasa, Shinobu; Toyota, Hiromichi; Inoue, Toru; Usui, Tomoya

2013-01-01

Highlights: •RF plasma in water was used for nanoparticle synthesis. •Nanoparticles were produced from erosion of metallic electrode. •Rectangular and spherical tungsten oxide nanoparticles were produced. •No oxidations of the silver and gold spherical nanoparticles were produced. -- Abstract: A process for synthesis of nanoparticles using plasma in water generated by a radio frequency of 27.12 MHz is proposed. Tungsten oxide, silver, and gold nanoparticles were produced at 20 kPa through erosion of a metallic electrode exposed to plasma. Characterization of the produced nanoparticles was carried out by XRD, absorption spectrum, and TEM. The nanoparticle sizes were compared with those produced by a similar technique using plasma in liquid

Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

International Nuclear Information System (INIS)

Goubard, F.; Vidal, F.; Bazzi, R.; Tillement, O.; Chevrot, C.; Teyssie, D.

2007-01-01

In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd 2 O 3 . These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films

Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

Science.gov (United States)

Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

2016-04-01

Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

Characterization of silane reduced CVD tungsten films with respect to silicon content

International Nuclear Information System (INIS)

Suzuki, M.; Kobayashi, N.; Makai, K.

1990-01-01

Tungsten (W) films grown by LPCVD using WF 6 and SiH 4 are characterized with respect to Si content ([Si]) in the film. The Si content was influenced by the deposition temperature as well as the flow ratio of WF 6 /SiH 4 . The electrical resistance, film stress, and film composition of as-deposited films are categorized by [Si] into three groups: [Si] ≤ 2 atm%, 2 ≤ [Si] 40 atm%. When [Si] ≤ 2 atm%, the electrical resistance is almost proportional to [Si], and it is mainly determined by the impurity scattering of Si. In this [Si] region, W can be selectively deposited on Si. On the other hand, when 2 ≤ [Si] 20-40 atm%, the electrical resistance is only slightly affected by Si content, and its temperature dependence is peculiar to semiconductors. When [Si] > 40 atm%, the microcrystals of WSi 2 begins to form in the film

Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

Science.gov (United States)

Chen, Po-Chiang; Shen, Guozhen; Shi, Yi; Chen, Haitian; Zhou, Chongwu

2010-08-24

In the work described in this paper, we have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes. These hybrid nanostructured films, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology, were produced by using a filtration method. Here, manganese dioxide nanowire/SWNT hybrid films worked as the positive electrode, and indium oxide nanowire/SWNT hybrid films served as the negative electrode in a designed ASC. In our design, charges can be stored not only via electrochemical double-layer capacitance from SWNT films but also through a reversible faradic process from transition-metal-oxide nanowires. In addition, to obtain stable electrochemical behavior during charging/discharging cycles in a 2 V potential window, the mass balance between two electrodes has been optimized. Our optimized hybrid nanostructured ASCs exhibited a superior device performance with specific capacitance of 184 F/g, energy density of 25.5 Wh/kg, and columbic efficiency of approximately 90%. In addition, our ASCs exhibited a power density of 50.3 kW/kg, which is 10-fold higher than obtained in early reported ASC work. The high-performance hybrid nanostructured ASCs can find applications in conformal electrics, portable electronics, and electrical vehicles.

Oxide ultrathin films science and technology

CERN Document Server

Pacchioni, Gianfranco

2012-01-01

A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

Hydrogen evolution at nanoporous gold/tungsten sulfide composite film and its optimization

DEFF Research Database (Denmark)

Xiao, Xinxin; Engelbrekt, Christian; Li, Zheshen

2015-01-01

Development of efficient and economical electrochemical systems for water splitting is a key part of renewable energy technology. Amorphous films of tungsten sulfide have been deposited by electrochemical reduction of tetrathiotungstate ions (WS42-) on dealloyed nanoporous gold (NPG) for electroc......-term stability. The measured Tafel slope of 74 mV dec-1 implies an underlying Volmer-Heyrovsky HER mechanism....

Tungsten oxide-graphene oxide (WO3-GO) nanocomposite as an efficient photocatalyst, antibacterial and anticancer agent

Science.gov (United States)

Jeevitha, G.; Abhinayaa, R.; Mangalaraj, D.; Ponpandian, N.

2018-05-01

Functioning of ultrasonically prepared tungsten oxide-graphene oxide (WO3-GO) nanocomposite as a photocatalyst, antibacterial and anticancer system was investigated and the obtained results were compared with that of pure WO3 nanoparticles. Structural, morphological, compositional and optical properties of the prepared WO3 nanoparticles and WO3-GO nanocomposite were studied. Photocatalytic efficiency of the system on organic dyes such as methylene blue (MB, cationic) and indigo carmine (IC, anionic) was investigated. The enhanced efficiency of the WO3-GO nanocomposite system was evaluated under sunlight and compared with that of pure WO3. The degradation efficiency values for MB and IC were found to be 97.03% and 95.43% at 180 and 120 min respectively. Antibacterial activity of the WO3-GO nanocomposite under visible light was tested and improved inhibition results were observed for Escherichia coli and Bacillus subtilis after 6 h of light exposure. The photocatalytic degradation efficiency and antibacterial activity of the WO3-GO nanocomposite are attributed to the improved electron-hole pair separation rate. Investigation on anticancer activity of WO3-GO nanocomposite was tested on human lung cancer (A-549) cell line and the IC50 value was found to be 139.6 ± 4.53 μg/mL. The results obtained in this study may be used as a platform for the development of photocatalysis applications based on WO3-GO nanocomposite.

Electrochemical investigations of ion-implanted oxide films

International Nuclear Information System (INIS)

Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

1985-01-01

Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

Structural and photoelectrochemical investigation of boron-modified nanostructured tungsten trioxide films

International Nuclear Information System (INIS)

Barczuk, Piotr J.; Krolikowska, Agata; Lewera, Adam; Miecznikowski, Krzysztof; Solarska, Renata; Augustynski, Jan

2013-01-01

We report a modification of nanostructured WO 3 films by doping with boron. The films were obtained by a direct one-step sol–gel route involving tungstic acid/polyethelene glycol precursor. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the incorporation of boron results in the retention of a substantial amount of water and/or hydroxyl groups in the WO 3 lattice and at the surface of nanoparticles occurring despite high temperature (550 °C) annealing of the films. Another consequence of boron doping is the largely increased roughness factor revealed by atomic force microscopy (AFM) imaging. Both kinds of films are highly porous and consist of partly sintered particles with sizes in the range of tens of nanometers. The photoelectrochemical (PEC) studies performed under simulated solar AM 1.5 illumination showed significantly enhanced water oxidation photocurrents for B-WO 3 photoanodes, by about 25% higher than those for the undoped WO 3 films of similar thickness. The low extent of recombination of photogenerated charges was confirmed by incident photon-to-current conversion efficiencies (IPCEs) reaching 70% in the region of visible wavelengths at 420 nm. The improved PEC properties were attributed to the increased surface hydroxylation of B-WO 3 nanoparticles favoring water photo-oxidation reaction and to the larger surface area of the film exposed to the electrolyte

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

Science.gov (United States)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Hydrogen retention and erosion behaviour of tungsten-doped carbon films (a-C:W)

International Nuclear Information System (INIS)

Sauter, Philipp Andre

2012-01-01

In this study tungsten-doped carbon films (a-C:W) were investigated with respect on hydrogen retention and erosion under deuterium (D) impact. a-C:W was used as model system for mixed layers, which will be deposited on the inner wall of the fusion reactor ITER. The erosion is lowered by the successive enrichment of tungsten at the surface and only mildly depends on the dopant concentration and the temperature. The hydrogen retention is determined by the diffusion of D into depth, which increases with temperature. The resulting successive accumulation of D in a-C:W is insensitive on enrichment for high fluences and in line with the accumulation of D in C.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer

International Nuclear Information System (INIS)

Martins, Alessandro F.; Follmann, Heveline D.M.; Rubira, Adley F.; Muniz, Edvani C.

2011-01-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through 1 H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

Energy Technology Data Exchange (ETDEWEB)

Goubard, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)]. E-mail: fabrice.goubard@u-cergy.fr; Vidal, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Bazzi, R. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Tillement, O. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Nano-H, 23 rue Royal, 69001 Lyon (France); Chevrot, C. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Teyssie, D. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)

2007-10-15

In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd{sub 2}O{sub 3}. These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films.

Deposition and cyclic oxidation behavior of a protective (Mo,W)(Si,Ge) 2 coating on Nb-base alloys

International Nuclear Information System (INIS)

Mueller, A.; Wang, G.

1992-01-01

A multicomponent diffusion coating has been developed to protect Nb-base alloys from high-temperature environmental attach. A solid solution of molybdenum and tungsten disilicide (Mo, W)Si 2 , constituted the primary coating layer which supported a slow-growing protective silica scale in service. Germanium additions were made during the coating process to improve the cyclic oxidation resistance by increasing the thermal expansion coefficient of the vitreous silica film formed and to avoid pesting by decreasing the viscosity of the protective film. In this paper, the development of the halide-activated pack cementation coating process to produce this (Mo,W)(Si,Ge) 2 coating on Nb-base alloys is described. The results of cyclic oxidation for coupons coated under different conditions in air at 1370 degrees C are presented. Many coupons have successfully passed 200 1 h cyclic oxidation tests at 1370 degrees C with weight-gain values in the range of 1.2 to 1.6 mg/cm 2

CTAB assisted synthesis of tungsten oxide nanoplates as an efficient low temperature NOX sensor

Science.gov (United States)

Mehta, Swati S.; Tamboli, Mohaseen S.; Mulla, Imtiaz S.; Suryavanshi, Sharad S.

2018-02-01

Tungsten oxide nanoplates with porous morphology were effectively prepared by acidification using CTAB (HexadeCetyltrimethyl ammonium bromide) as a surfactant. For characterization, the synthesized materials were subjected to X-Ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-Visible spectroscopy (UV-Vis) and surface area (BET) measurements. The morphology and size of the particles were controlled by solution acidity. The BET results confirmed that the materials are well crystallized and mesoporous in nature. The nanocrystalline powder was used to prepare thick films by screen printing on alumina substrate for the investigation of gas sensing properties. The gas response measurements revealed that the samples acidified using 10 M H2SO4 exhibits highest response of 91% towards NOX at optimum temperature of 200 °C for 100 ppm, and it also exhibits 35% response at room temperature.

Impregnated cathode coated with tungsten thin film containing Sc2O3

International Nuclear Information System (INIS)

Yamamoto, S.; Taguchi, S.; Watanabe, I.; Kawase, S.

1987-01-01

An impregnated cathode of a novel structure is proposed, fabricated, and evaluated. A thin tungsten film 100--400 nm in thickness containing various amounts of Sc 2 O 3 is coated on a standard impregnated cathode composed of a porous tungsten body in which electron emissive materials are impregnated. The electron emission property measured with a diode configuration is found to be dependent on Sc 2 O 3 content and surface atom distribution. Surface atom distribution is depicted by means of Auger electron spectroscopy. For high electron emission enhancement it is necessary for Sc 2 O 3 content to be 2.5--6.5 wt. % and for a layer of the order of a monolayer in thickness composed of Ba, Sc, and O to develop on the cathode surface

Amperometric Biosensor Based on Zirconium Oxide/Polyethylene Glycol/Tyrosinase Composite Film for the Detection of Phenolic Compounds

Directory of Open Access Journals (Sweden)

Nor Monica Ahmad

2016-06-01

Full Text Available A phenolic biosensor based on a zirconium oxide/polyethylene glycol/tyrosinase composite film for the detection of phenolic compounds has been explored. The formation of the composite film was expected via electrostatic interaction between hexacetyltrimethylammonium bromide (CTAB, polyethylene glycol (PEG, and zirconium oxide nanoparticles casted on screen printed carbon electrode (SPCE. Herein, the electrode was treated by casting hexacetyltrimethylammonium bromide on SPCE to promote a positively charged surface. Later, zirconium oxide was mixed with polyethylene glycol and the mixture was dropped cast onto the positively charged SPCE/CTAB. Tyrosinase was further immobilized onto the modified SPCE. Characterization of the prepared nanocomposite film and the modified SPCE surface was investigated by scanning electron microscopy (SEM, Electrochemical Impedance Spectroscopy (EIS, and Cyclic voltamogram (CV. The developed biosensor exhibits rapid response for less than 10 s. Two linear calibration curves towards phenol in the concentrations ranges of 0.075–10 µM and 10–55 µM with the detection limit of 0.034 µM were obtained. The biosensor shows high sensitivity and good storage stability for at least 30 days.

Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

International Nuclear Information System (INIS)

Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

2018-03-01

Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

Improved opto-electronic properties of silicon heterojunction solar cells with SiO x /Tungsten-doped indium oxide double anti-reflective coatings

Science.gov (United States)

Yu, Jian; Zhou, Jie; Bian, Jiantao; Zhang, Liping; Liu, Yucheng; Shi, Jianhua; Meng, Fanying; Liu, Jinning; Liu, Zhengxin

2017-08-01

Amorphous SiO x was prepared by plasma enhanced chemical vapor deposition (PECVD) to form SiO x /tungsten-doped indium oxide (IWO) double anti-reflective coatings for silicon heterojunction (SHJ) solar cell. The sheet resistance of SiO x /IWO stacks decreases due to plasma treatment during deposition process, which means thinner IWO film would be deposited for better optical response. However, the comparisons of three anti-reflective coating (ARC) structures reveal that SiO x film limits carier transport and the path of IWO-SiO x -Ag structure is non-conductive. The decrease of sheet resistance is defined as pseudo conductivity. IWO film capping with SiO x allows observably reduced reflectance and better response in 300-400 and 600-1200 nm wavelength ranges. Compared with IWO single ARC, the average reflection is reduced by 1.65% with 70 nm SiO x /80 nm IWO double anti-reflective coatings (DARCs) in 500-1200 nm wavelength range, leading to growing external quantum efficiency response, short circuit current density (J sc), and efficiency. After well optimization of SiO x /IWO stacks, an impressive efficiency of 23.08% is obtained with high J sc and without compromising open circuit voltage (V oc) and fill factor. SiO x /IWO DARCs provide better anti-reflective properties over a broad range of wavelength, showing promising application for SHJ solar cells.

Deposition of indium tin oxide thin films by cathodic arc ion plating

International Nuclear Information System (INIS)

Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

2005-01-01

Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

The nano-fractal structured tungsten oxides films with high thermal stability prepared by the deposition of size-selected W clusters

Energy Technology Data Exchange (ETDEWEB)

Park, Eun Ji; Kim, Young Dok [Sungkyunkwan University, Department of Chemistry, Suwon (Korea, Republic of); Dollinger, Andreas; Huether, Lukas; Blankenhorn, Moritz; Koehler, Kerstine; Gantefoer, Gerd [Konstanz University, Department of Physics, Constance (Germany); Seo, Hyun Ook [Sangmyung University, Department of Chemistry and Energy Engineering, Seoul (Korea, Republic of)

2017-06-15

Size-selected W{sub n}{sup -} clusters (n = 1650) were deposited on the highly ordered pyrolytic graphite surface at room temperature under high vacuum conditions by utilizing a magnetron sputtering source and a magnet sector field. Moreover, geometrical structure and surface chemical states of deposited clusters were analyzed by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy, respectively. The formation of 2-D islands (lateral size ∝150 nm) with multiple dendritic arms was observed by STM, and the structure of the individual W{sub 1650} clusters survived within the dendritic arms. To study the thermal stability of the nano-fractal structure under the atmospheric conditions, the sample was brought to the ambient air conditions and sequentially post-annealed at 200, 300, and 500 C in the air. The nano-fractal structure was maintained after the 1st post-annealing process at 200 C for 1 h in the air, and the subsequent 2nd post-annealing at 300 C (for 1 h, in the air) also did not induce any noticeable change in the topological structure of the sample. The topological changes were observed only after the further post-annealing at a higher temperature (at 500 C, 1 h) in the air. We show high potential use of these nano-structured films of tungsten oxides in ambient conditions. (orig.)

Vanadium Doped Tungsten Oxide Material - Electrical Physical and Sensing Properties

Directory of Open Access Journals (Sweden)

Shishkin N. Y.

2008-05-01

Full Text Available The electrical physical and sensing (to VOCs and inorganic gases properties of vanadium doped tungsten oxide in the regions of phase transition temperature were investigated. Vanadium oxide (II dimerization was observed in the doped material, corresponding to new phase transition. The extreme sensitivity and selectivity to chemically active gases and vapors in small concentrations: CO, NOx, NH3 acetone, ethanol near phase transitions temperature was found. Sensor elements were manufactured for the quantitative detection (close to 1 ppm of alcohol and ammonia.

Modified MIS-structure based on nanoporous silicon with enhanced sensitivity to the hydrogen containing gases

Energy Technology Data Exchange (ETDEWEB)

Gorbanyuk, T.; Evtukh, A.; Litovchenko, V.; Solntsev, V. [Institute of Semiconductor Physics, Kiev (Ukraine)

2008-07-01

The gas sensitivity of metal-insulator-semiconductor (MIS)-structures based on nanoporous silicon with active electrodes from palladium/tungsten oxide composite has been studied. It was found that the using of palladium/tungsten oxide composite (instead of thin palladium film) leads to enhanced sensitivity of MIS structures to hydrogen sulphide in air. The mechanism of this phenomenon has been established. The enhanced H{sub 2}S sensitivity is explained in the following way. The microparticles of tungsten trioxide inside palladium matrix stimulate the dissociation of hydrogen sulphide molecules, and hydrogen atoms and/or protons flow down to palladium surface, are absorbed by palladium volume, diffuse to palladium/oxidized nanoporous silicon interface. Hydrogen atoms adsorbed at the interface are polarized and give rise to a dipole layer. As a result, the voltage shift of the capacity-voltage (C-V) curve proportional to the measured gas concentration is observed. The surface microstructure of Pd/WO{sub 3} composite was studied by AFM microscopy. The chemical content of the composite film has been investigated by SIMS. It was found that the composite film on nanoporous silicon surface poses the holes with the size about 0.05 {mu}m, the mean separation between tungsten oxide microparticles is 1-2 {mu}m. It also was found that the using of the additional double layer polymer film (polymer film (phthalocyanine zinc)/semicon-ductor film (cadmium sulphide)) on composite film surface leads to the additional enhancement of the gas sensitivity to hydrogen sulphide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Graphenated polyaniline-doped tungsten oxide nanocomposite sensor for real time determination of phenanthrene

International Nuclear Information System (INIS)

Tovide, Oluwakemi; Jaheed, Nazeem; Mohamed, Nurali; Nxusani, Ezo; Sunday, Christopher E.; Tsegaye, Abebaw; Ajayi, Rachel F.; Njomo, Njagi; Makelane, Hlamulo; Bilibana, Mawethu; Baker, Priscilla G.; Williams, Avril; Vilakazi, Sibulelo; Tshikhudo, Robert; Iwuoha, Emmanuel I.

2014-01-01

A graphenated polyaniline/tungsten oxide (PANI/WO 3 /GR) nanocomposite sensor was prepared by electropolymerisation of a mixture of aniline monomer and tungsten oxide on a graphene-modified glassy carbon electrode (GCE). The PANI/WO 3 /GR/GCE nanocomposite electrode was tested as a sensor for the determination of phenanthrene. The direct electro-oxidation behaviour of phenanthrene on the PANI/WO 3 /GR modified GCE was carefully investigated by cyclic voltammetry. The results indicated that the PANI/WO 3 /GR/GCE sensor was more sensitive to phenanthrene (with a dynamic linear range of 1.0 - 6.0 pM and a detection limit of 0.123 pM.) than GCE, PANI/GCE or PANI/WO 3 /GCE. The sensor exhibited excellent reproducibility and long-term stability. The sensor exhibits lower detection sensitivity than the WHO permissible level of 1.12 nM phenanthrene in wastewater

Tungsten carbide/porous carbon composite as superior support for platinum catalyst toward methanol electro-oxidation

Energy Technology Data Exchange (ETDEWEB)

Jiang, Liming [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Fu, Honggang, E-mail: fuhg@vip.sina.com [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Harbin 150080 (China); Wang, Lei; Mu, Guang; Jiang, Baojiang; Zhou, Wei; Wang, Ruihong [Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Harbin 150080 (China)

2014-01-01

Graphical abstract: The WC nanoparticles are well dispersed in the carbon matrix. The size of WC nanoparticles is about 30 nm. It can be concluded that tungsten carbide and carbon composite was successfully prepared by the present synthesis conditions. - Highlights: • The WC/PC composite with high specific surface area was prepared by a simple way. • The Pt/WC/PC catalyst has superior performance toward methanol electro-oxidation. • The current density for methanol electro-oxidation is as high as 595.93 A g{sup −1} Pt. • The Pt/WC/PC catalyst shows better durability and stronger CO electro-oxidation. • The performance of Pt/WC/PC is superior to the commercial Pt/C (JM) catalyst. - Abstract: Tungsten carbide/porous carbon (WC/PC) composites have been successfully synthesized through a surfactant assisted evaporation-induced-assembly method, followed by a thermal treatment process. In particular, WC/PC-35-1000 composite with tungsten content of 35% synthesized at the carbonized temperature of 1000 °C, exhibited a specific surface area (S{sub BET}) of 457.92 m{sup 2} g{sup −1}. After loading Pt nanoparticles (NPs), the obtained Pt/WC/PC-35-1000 catalyst exhibits the highest unit mass electroactivity (595.93 A g{sup −1} Pt) toward methanol electro-oxidation, which is about 2.6 times as that of the commercial Pt/C (JM) catalyst. Furthermore, the Pt/WC/PC-35-1000 catalyst displays much stronger resistance to CO poisoning and better durability toward methanol electrooxidation compared with the commercial Pt/C (JM) catalyst. The high electrocatalytic activity, strong poison-resistivity and good stability of Pt/WC/PC-35-1000 catalyst are attributed to the porous structures and high specific surface area of WC/PC support could facilitate the rapid mass transportation. Moreover, synergistic effect between WC and Pt NPs is favorable to the higher catalytic performance.

Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

DEFF Research Database (Denmark)

Reolon, R. P.; Sanna, S.; Xu, Yu

2018-01-01

A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

Cyclic Nanostructures of Tungsten Oxide (WO3)n  (n = 2–6) as NOx Gas Sensor: A Theoretical Study

Science.gov (United States)

Izadyar, Mohammad; Jamsaz, Azam

2014-01-01

Today's WO3-based gas sensors have received a lot of attention, because of important role as a sensitive layer for detection of the small quantities of  NOx. In this research, a theoretical study has been done on the sensing properties of different cyclic nanoclusters of (WO3)n  (n = 2–6) for NOx  (x = 1,2) gases. Based on the calculated adsorption energies by B3LYP and X3LYP functionals, from the different orientations of  NOx molecule on the tungsten oxide clusters, O–N⋯W was preferred. Different sizes of the mentioned clusters have been analyzed and W2O6 cluster was chosen as the best candidate for NOx detection from the energy viewpoint. Using the concepts of the chemical hardness and electronic charge transfer, some correlations between the energy of adsorption and interaction energy have been established. These analyses confirmed that the adsorption energy will be boosted with charge transfer enhancement. However, the chemical hardness relationship is reversed. Finally, obtained results from the natural bond orbital and electronic density of states analysis confirmed the electronic charge transfer from the adsorbates to WO3 clusters and Fermi level shifting after adsorption, respectively. The last parameter confirms that the cyclic clusters of tungsten oxide can be used as NOx gas sensors. PMID:25544841

Cyclic Nanostructures of Tungsten Oxide WO3n  (n=2–6 as NOx Gas Sensor: A Theoretical Study

Directory of Open Access Journals (Sweden)

Mohammad Izadyar

2014-01-01

Full Text Available Today’s WO3-based gas sensors have received a lot of attention, because of important role as a sensitive layer for detection of the small quantities of  NOx. In this research, a theoretical study has been done on the sensing properties of different cyclic nanoclusters of WO3n  (n=2–6 for NOx  (x=1,2 gases. Based on the calculated adsorption energies by B3LYP and X3LYP functionals, from the different orientations of  NOx molecule on the tungsten oxide clusters, O–N⋯W was preferred. Different sizes of the mentioned clusters have been analyzed and W2O6 cluster was chosen as the best candidate for NOx detection from the energy viewpoint. Using the concepts of the chemical hardness and electronic charge transfer, some correlations between the energy of adsorption and interaction energy have been established. These analyses confirmed that the adsorption energy will be boosted with charge transfer enhancement. However, the chemical hardness relationship is reversed. Finally, obtained results from the natural bond orbital and electronic density of states analysis confirmed the electronic charge transfer from the adsorbates to WO3 clusters and Fermi level shifting after adsorption, respectively. The last parameter confirms that the cyclic clusters of tungsten oxide can be used as NOx gas sensors.

Mechanistic, kinetic, and processing aspects of tungsten chemical mechanical polishing

Science.gov (United States)

Stein, David

. In this mechanism, the colloid reacts with the chemistry of the slurry to produce active sites. These active sites become inactive by removing tungsten from the film. The process repeats when then inactive sites are reconverted to active sites. It is shown that the empirical form of the heuristic mechanism fits all of the data obtained. The mechanism also agrees with the limiting cases that were investigated.

Role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films

International Nuclear Information System (INIS)

Rodbell, K.P.; Ficalora, P.J.

1989-01-01

Hydrogen was found to alter the electrical properties of gold (Au), titanium (Ti), and tungsten (W) thin films deposited on SiO 2 /Si substrates. Specifically, the addition of H 2 was found to reduce both hillock growth and the rate of electromigration in Au and Ti films. The resistance and 1/f noise of unpassivated Au, Ti, and W films was also found to decrease in H 2 . The influence of H 2 adsorption, absorption, compound formation, and film crystal structure [Au (fcc), Ti (hcp), and W (bcc)] on the rate of electromigration is explored. The data suggest that a modification of the stress state at the metal film/substrate interface is responsible for the decreased resistance, 1/f noise, and electromigration rates observed in H 2

Ferroelectric thin films using oxides as raw materials

Directory of Open Access Journals (Sweden)

E.B. Araújo

1999-01-01

Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

Towards Near-Infrared Photosensitization of Tungsten Trioxide Nanostructured Films by Upconverting Nanoparticles

Science.gov (United States)

Venne, Frederic

Nanostructured metal oxides semiconductors are widely used in solar energy related applications, such as in dye-sensitized solar cells. Tungsten trioxide (WO3) is an electrochromic material, extensively investigated in solar energy conversion (e.g. photoelectrochemistry) and conservation (e.g. electrochromism). However, WO3, because of its wide bandgap (≈ 2.5 eV), is transparent to an important portion of the solar spectrum and can effectively absorb light only up to ca. 500 nm, which limits the power conversion efficiency of devices based thereon. Upconverting materials can absorb several low-energy photons to emit one high-energy photon. In particular, upconverting nanoparticles are widely studied in biomedical and solar energy applications, as they can transform two or several infrared photons in a visible photon. As the Sun contains important NIR and IR portion, UCNPs are interesting candidates to transform NIR or IR light into visible light to be absorbed by wide bandgap semiconductor, such as metal oxides. The work presented in this master's thesis consists in embedding NaGdF4:Er3+, Yb3+ UCNPs into a nanostructured WO3 matrix. The objective is to increase the power conversion efficiency of WO3 after solar light harvesting. The integration of two materials with nanostructured nature has the potential to lead to a good synergy between them. We include an article in this master's thesis. In this article, we report on the mixing of NaGdF4:Er3+, Yb 3+ UCNPs with WO3 in solution and on the deposition of the two-component solution on ITO-patterned electrodes. After engineering the fabrication and deposition of the thin nanocomposite films, they were systematically studied. Morphology was studied by atomic force microscopy, structure by X-ray diffraction, photoluminescence by fluorescence hyperspectral microscopy, and charge carrier transport under NIR irradiation by current-time measurements. Notably, we observed an increase in the value of the current with

Thermal oxidation of Ni films for p-type thin-film transistors

KAUST Repository

Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

2013-01-01

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

Oxidation films morphology

International Nuclear Information System (INIS)

Paidassi, J.

1960-01-01

After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

Preparation of molybdenum oxide thin films by MOCVD

International Nuclear Information System (INIS)

Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

2007-01-01

In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

Preparation of molybdenum oxide thin films by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

2007-05-31

In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

Synthesis of hexagonal ultrathin tungsten oxide nanowires with diameters below 5 nm for enhanced photocatalytic performance

Science.gov (United States)

Lu, Huidan; Zhu, Qin; Zhang, Mengying; Yan, Yi; Liu, Yongping; Li, Ming; Yang, Zhishu; Geng, Peng

2018-04-01

Semiconductor with one dimension (1D) ultrathin nanostructure has been proved to be a promising nanomaterial in photocatalytic field. Great efforts were made on preparation of monoclinic ultrathin tungsten oxide nanowires. However, non-monoclinic phase tungsten oxides with 1D ultrathin structure, especially less than 5 nm width, have not been reported. Herein, we report the synthesis of hexagonal ultrathin tungsten oxide nanowires (U-WOx NW) by modified hydrothermal method. Microstructure characterization showed that U-WOx NW have the diameters of 1-3 nm below 5 nm and are hexagonal phase sub-stoichiometric WOx. U-WOx NW show absorption tail in the visible and near infrared region due to oxygen vacancies. For improving further photocatalytic performance, Ag co-catalyst was grown directly onto U-WOx NW surface by in situ redox reaction. Photocatalytic measurements revealed hexagonal U-WOx NW have better photodegradation activity, compared with commercial WO3(C-WO3) and oxidized U-WOx NW, ascribe to larger surface area, short diffusion length of photo-generated charge carriers and visible absorption of oxygen-vacancy-rich hexagonal ultrathin nanostructures. Moreover, the photocatalytic activity and stability of U-WOx NW using Ag co-catalyst were further improved.

On-chip microplasma reactors using carbon nanofibres and tungsten oxide nanowires as electrodes

International Nuclear Information System (INIS)

Agiral, Anil; Groenland, Alfons W; Han Gardeniers, J G E; Chinthaginjala, J Kumar; Seshan, K; Lefferts, Leon

2008-01-01

Carbon nanofibres (CNFs) and tungsten oxide (W 18 O 49 ) nanowires have been incorporated into a continuous flow type microplasma reactor to increase the reactivity and efficiency of the barrier discharge at atmospheric pressure. CNFs and tungsten oxide nanowires were characterized by high-resolution scanning electron microscopy, transmission electron microscopy and nanodiffraction methods. Field emission of electrons from those nanostructures supplies free electrons and ions during microplasma production. Reduction in breakdown voltage, higher number of microdischarges and higher energy deposition were observed at the same applied voltage when compared with plane electrodes at atmospheric pressure in air. Rate coefficients of electron impact reaction channels to decompose CO 2 were calculated and it was shown that CO 2 consumption increased using CNFs compared with plane electrode in the microplasma reactor.

Thermodynamics of the hydrogen-carbon-oxygen-tungsten system, as applied to the manufacture of tungsten and tungsten carbide

International Nuclear Information System (INIS)

Schwenke, G.K.

2001-01-01

The thermodynamics of the quaternary hydrogen-carbon oxygen-tungsten system and its binary and ternary sub-systems are reviewed. Published thermodynamic data are evaluated, and expression for free energies of formation are chosen. These expressions are integrated with and equilibrium-calculating algorithm, producing a powerful tool for understanding and improving the manufacture of tungsten and tungsten carbide. Three examples are presented: reduction/carburization of tungstic oxide with hydrogen, carbon, and methane. (author)

Micro-length anodic porous niobium oxide for lithium-ion thin film battery applications

International Nuclear Information System (INIS)

Yoo, Jeong Eun; Park, Jiyoung; Cha, Gihoon; Choi, Jinsub

2013-01-01

The anodization of niobium in an aqueous mixture of H 3 PO 4 and HF in the potential range from 2.5 to 30 V for 2 h at 5 °C was performed, demonstrating that anodic porous niobium oxide film with a thickness of up to 2000 nm, including a surface dissolution layer, can be obtained by controlling the applied potential and composition of the electrolytes. Specifically, surface dissolution-free porous niobium oxide film with a thickness of 800 nm can be prepared in a low electrolyte concentration. The surface dissolution is observed when the concentration ratio of HF (wt.%):H 3 PO 4 (M) was more than 2:1. The discontinuous layers in the niobium oxide film were observed when the thickness was higher than 500 nm, which was ascribed to the large volume expansion of the niobium oxide grown from the niobium metal. The anodic porous niobium oxide film was used as the cathode for lithium-ion batteries in the potential range from 1.2 to 3.0 V at a current density of 7.28 × 10 − 6 A cm −2 . The first discharge capacity of ca. 53 μA h cm − 2 was obtained in 800 nm thick niobium oxide without a surface dissolution layer. - Highlights: ► Anodic porous niobium oxide film with a thickness of 2000 nm was obtained. ► Surface dissolution-free porous niobium oxide film was prepared. ► The niobium oxide film was used as the cathode for lithium-ion batteries

Electrodeposition of metallic tungsten coating from binary oxide molten salt on low activation steel substrate

International Nuclear Information System (INIS)

Liu, Y.H.; Zhang, Y.C.; Jiang, F.; Fu, B.J.; Sun, N.B.

2013-01-01

Tungsten is considered a promising plasma facing armor material for future fusion devices. An electrodeposited metallic tungsten coating from Na 2 WO 4 –WO 3 binary oxide molten salt on low activation steel (LAS) substrate was investigated in this paper. Tungsten coatings were deposited under various pulsed currents conditions at 1173 K in atmosphere. Cathodic current density and pulsed duty cycle were investigated for pulsed current electrolysis. The crystal structure and microstructure of tungsten coatings were characterized by X-ray diffractometry, scanning electron microscopy, and energy X-ray dispersive analysis techniques. The results indicated that pulsed current density and duty cycle significantly influence tungsten nucleation and electro-crystallization phenomena. The average grain size of the coating becomes much larger with increasing cathodic current density, which demonstrates that appropriate high cathodic current density can accelerate the growth of grains on the surface of the substrate. The micro-hardness of tungsten coatings increases with the increasing thickness of coatings; the maximum micro-hardness is 482 HV. The prepared tungsten coatings have a smooth surface, a porosity of less than 1%, and an oxygen content of 0.024 wt%

Electrodeposition of metallic tungsten coating from binary oxide molten salt on low activation steel substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Y. H. [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China); State Nuclear Power Research Institute, Xicheng District, Beijing (China); Zhang, Y.C., E-mail: zycustb@163.com [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China); Jiang, F.; Fu, B. J.; Sun, N. B. [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China)

2013-11-15

Tungsten is considered a promising plasma facing armor material for future fusion devices. An electrodeposited metallic tungsten coating from Na{sub 2}WO{sub 4}–WO{sub 3} binary oxide molten salt on low activation steel (LAS) substrate was investigated in this paper. Tungsten coatings were deposited under various pulsed currents conditions at 1173 K in atmosphere. Cathodic current density and pulsed duty cycle were investigated for pulsed current electrolysis. The crystal structure and microstructure of tungsten coatings were characterized by X-ray diffractometry, scanning electron microscopy, and energy X-ray dispersive analysis techniques. The results indicated that pulsed current density and duty cycle significantly influence tungsten nucleation and electro-crystallization phenomena. The average grain size of the coating becomes much larger with increasing cathodic current density, which demonstrates that appropriate high cathodic current density can accelerate the growth of grains on the surface of the substrate. The micro-hardness of tungsten coatings increases with the increasing thickness of coatings; the maximum micro-hardness is 482 HV. The prepared tungsten coatings have a smooth surface, a porosity of less than 1%, and an oxygen content of 0.024 wt%.

Detection and reduction of tungsten contamination in ion implantation processes

International Nuclear Information System (INIS)

Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D.

2016-01-01

In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10 10 cm -2 ). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Detection and reduction of tungsten contamination in ion implantation processes

Energy Technology Data Exchange (ETDEWEB)

Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D. [STMicroelectronics, Agrate Brianza (Italy)

2016-12-15

In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10{sup 10} cm{sup -2}). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electro-chemically-based technologies for processing of tungsten components in fusion technology

International Nuclear Information System (INIS)

Holstein, N.; Konys, J.; Krauss, W.; Lorenz, J.

2010-01-01

In fusion technology layers and bulk components fabricated from tungsten and W-alloys are used as functional materials, e.g. as coatings of blanket modules or T-permeation barriers and also as structural components in a He-cooled divertor. Their application under high heat loads and temperatures is besides manufacturing, also challenging regarding joining, caused e.g. by expansion mismatches in combination with steel or other diffusion issues. Driven by these needs, electro-chemically-based technologies were analyzed concerning their advantages in processing in the fields of soft structuring of tungsten alloys and in deposition of functional scales. The Electro-Chemistry (EC) of tungsten is characterized by its affection to build up passivation layers in aqueous media during the initial oxidation, which is the result of an unavoidable basic electrochemical reaction with water (W + 3H 2 O → WO 3 + 3H 2 ), although the element standard potential is situated between common EC material like iron and copper. (orig.)

Cyclic Nanostructures of Tungsten Oxide (WO3) n   (n = 2-6) as NO x Gas Sensor: A Theoretical Study.

Science.gov (United States)

Izadyar, Mohammad; Jamsaz, Azam

2014-01-01

Today's WO3-based gas sensors have received a lot of attention, because of important role as a sensitive layer for detection of the small quantities of  NO x . In this research, a theoretical study has been done on the sensing properties of different cyclic nanoclusters of (WO3) n   (n = 2-6) for NO x   (x = 1,2) gases. Based on the calculated adsorption energies by B3LYP and X3LYP functionals, from the different orientations of  NO x molecule on the tungsten oxide clusters, O-N⋯W was preferred. Different sizes of the mentioned clusters have been analyzed and W2O6 cluster was chosen as the best candidate for NO x detection from the energy viewpoint. Using the concepts of the chemical hardness and electronic charge transfer, some correlations between the energy of adsorption and interaction energy have been established. These analyses confirmed that the adsorption energy will be boosted with charge transfer enhancement. However, the chemical hardness relationship is reversed. Finally, obtained results from the natural bond orbital and electronic density of states analysis confirmed the electronic charge transfer from the adsorbates to WO3 clusters and Fermi level shifting after adsorption, respectively. The last parameter confirms that the cyclic clusters of tungsten oxide can be used as NO x gas sensors.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

Energy Technology Data Exchange (ETDEWEB)

Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh [Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)

2016-09-15

Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated that a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.

Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

International Nuclear Information System (INIS)

Kubo, Toshio; Uno, Masayoshi

1991-01-01

Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

Nuclear microanalysis of oxide films on structural steel

International Nuclear Information System (INIS)

Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

1989-01-01

Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

The formation of tungsten doped Al_2O_3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

International Nuclear Information System (INIS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-01-01

Highlights: • Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al_2O_3/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na_2WO_4·2H_2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al_2O_3, ZnO, metallic tungsten and WO_3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al_2O_3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al_2O_3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al_2O_3/ZnO coatings is higher thanof undoped Al_2O_3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na_2WO_4·2H_2O. Tungsten in Al_2O_3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Anodic luminescence, structural, photoluminescent, and photocatalytic properties of anodic oxide films grown on niobium in phosphoric acid

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia)

2015-11-15

Graphical abstract: - Highlights: • Anodic luminescence is correlated to the existence of morphological defects in the oxide. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. • Oxide films formed under spark discharging are crystallized and composed of Nb{sub 2}O{sub 5}. • Photocatalytic activity and photoluminescence of Nb{sub 2}O{sub 5} films increase with time. - Abstract: This article reports on properties of oxide films obtained by anodization of niobium in phosphoric acid before and after the dielectric breakdown. Weak anodic luminescence of barrier oxide films formed during the anodization of niobium is correlated to the existence of morphological defects in the oxide layer. Small sized sparks generated by dielectric breakdown of formed oxide film cause rapid increase of luminescence intensity. The luminescence spectrum of obtained films on niobium under spark discharging is composed of continuum radiation and spectral lines caused by electronic spark discharging transitions in oxygen and hydrogen atoms. Oxide films formed before the breakdown are amorphous, while after the breakdown oxide films are partly crystalline and mainly composed of Nb{sub 2}O{sub 5} hexagonal phase. The photocatalytic activity of obtained oxide films after the breakdown was investigated by monitoring the degradation of methyl orange. Increase of the photocatalytic activity with time is related to an increase of oxygen vacancy defects in oxide films formed during the process. Also, higher concentration of oxygen vacancy defects in oxide films results in higher photoluminescence intensity.

Selective ablation of a titanium nitride film on tungsten carbide substrate using ultrashort laser pulses

International Nuclear Information System (INIS)

Oliveira, Eduardo Spinelli

2017-01-01

Surface coatings are applied to many cutting tools in the metallurgical industry in order to improve cutting efficiency and extend its useful life. In this work, tests were performed to remove the coating of titanium aluminum nitride (TiAlN) on tungsten carbide (WC-Co) pellets, using an ultrashort laser pulses beam. After determination of the damage thresholds of the film and the substrate, were ablated on the surface of the coating lines using two ablation conditions, it was initially operated on the low fluence regime for the film, and later on the low fluence regime of the substrate, far below the threshold of the film, applying high overlapping pulses. A laser induced breakdown spectroscopy (LIBS) system was set up to monitor the materials present in the plasma generated by the laser, but the system did not present sufficient sensitivity to read the low intensity of the plasma generated in the process and was not used. After the analysis of the traces by electron microscopy, optical profilometer and X-ray fluorescence spectroscopy, it was not possible to determine a safe process to carry out the selective removal of the film in question, however, due to the data obtained and observations of the results in some traces, new possibilities were raised, opening the discussion for future work. (author)

Micro creep mechanisms of tungsten

International Nuclear Information System (INIS)

Levoy, R.; Hugon, I.; Burlet, H.; Baillin, X.; Guetaz, L.

2000-01-01

Due to its high melting point (3410 deg C), tungsten offers good mechanical properties at elevated temperatures for several applications in non-oxidizing environment. The creep behavior of tungsten is well known between 1200 and 2500 deg C and 10 -3 to 10 -1 strain. However, in some applications when dimensional stability of components is required, these strains are excessive and it is necessary to know the creep behavior of the material for micro-strains (between 10 -4 and 10 -6 ). Methods and devices used to measure creep micro-strains are presented, and creep equations (Norton and Chaboche laws) were developed for wrought, annealed and recrystallized tungsten. The main results obtained on tungsten under low stresses are: stress exponent 1, symmetry of micro-strains in creep-tension and creep-compression, inverse creep (threshold stress), etc. TEM, SEM and EBSD studies allow interpretation of the micro-creep mechanism of tungsten under low stresses and low temperature (∼0.3 K) like the Harper-Dorn creep. In Harper-Dorn creep, micro-strains are associated with the density and the distribution of dislocations existing in the crystals before creep. At 975 deg C, the initial dislocation structure moves differently whether or not a stress is applied. To improve the micro-creep behavior of tungsten, a heat treatment is proposed to create the optimum dislocation structure. (authors)

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Process for the manufacture of a fuel catalyst made of tungsten carbide for electrochemical fuel cells. Verfahren zur Herstellung eines Brennstoffkatalysators aus Wolframcarbid fuer elektrochemische Brennstoffzellen

Energy Technology Data Exchange (ETDEWEB)

Baresel, D.; Gellert, W.; Scharner, P.

1982-05-19

The invention refers to a process for the manufacture of a fuel catalyst made of tungsten carbide for the direct generation of electrical energy by the oxidation of hydrogen, formaldehyde or formic acid in electrochemical fuel cells. Tungsten carbide is obtained by carburisation of tungsten or tungsten oxide by carbon monoxide. The steps of the process are as follows: dissolving the commercial-quality tungstic acid in ammonium hydroxide; precipitating the tungstic acid with concentrated hydrochloric acid; drying in a vacuum and then heating to 200/sup 0/C to remove the water of crystallisation forming tungsten trioxide; and mixing the tungsten trioxide with zinc powder and heating to 600/sup 0/C. The zinc oxide is dissolved with hydrochloric acid after cooling. The finely divided tungsten obtained in this way is converted with carbon monoxide in a quartz tube at 700/sup 0/C.

Hetero- and homogeneous three-dimensional hierarchical tungsten oxide nanostructures by hot-wire chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Houweling, Z.S., E-mail: Silvester.Houweling@asml.com [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Harks, P.-P.R.M.L.; Kuang, Y.; Werf, C.H.M. van der [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, J.W. [Utrecht University, Inorganic Chemistry and Catalysis, Padualaan 8, 3584 CH Utrecht (Netherlands); Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

2015-01-30

We present the synthesis of three-dimensional tungsten oxide (WO{sub 3−x}) nanostructures, called nanocacti, using hot-wire chemical vapor deposition. The growth of the nanocacti is controlled through a succession of oxidation, reduction and re-oxidation processes. By using only a resistively heated W filament, a flow of ambient air and hydrogen at subatmospheric pressure, and a substrate heated to about 700 °C, branched nanostructures are deposited. We report three varieties of simple synthesis approaches to obtain hierarchical homo- and heterogeneous nanocacti. Furthermore, by using catalyst nanoparticles site-selection for the growth is demonstrated. The atomic, morphological and crystallographic compositions of the nanocacti are determined using a combination of electron microscopy techniques, energy-dispersive X-ray spectroscopy and electron diffraction. - Highlights: • Continuous upscalable hot-wire CVD of 3D hierarchical nanocacti • Controllable deposition of homo- and heterogeneous WO{sub 3−x}/WO{sub 3−y} nanocacti • Introduction of three synthesis routes comprising oxidation, reduction and re-oxidation processes • Growth of periodic arrays of hetero- and homogeneous hierarchical 3D nanocacti.

Radiative capture of slow electrons by tungsten surface

International Nuclear Information System (INIS)

Artamonov, O.M.; Belkina, G.M.; Samarin, S.N.; Yakovlev, I.I.

1987-01-01

Isochromatic spectra of radiation capture of slow electrons by the surface of mono- and polycrystal tungsten recorded on 322 and 405 nm wave lengths are presented. The effect of oxygen adsorption on isochromates of the (110) face of tungsten monocrystal is investigated. The obtained isochromatic spectra are compared with energy band structure of tungsten. Based on the analysis of the obtained experimental results it is assumed that optical transition to the final state at the energy of 7.3 eV relatively to Fermi level is conditioned by surface states of the tungsten face (110)

Characterization of a Cobalt-Tungsten Interconnect

DEFF Research Database (Denmark)

Harthøj, Anders; Holt, Tobias; Caspersen, Michael

2012-01-01

is to act both as a diffusion barrier for chromium and provide better protection against high temperature oxidation than a pure cobalt coating. This work presents a characterization of a cobalt-tungsten alloy coating electrodeposited on the ferritic steel Crofer 22 H which subsequently was oxidized in air......A ferritic steel interconnect for a solid oxide fuel cell must be coated in order to prevent chromium evaporation from the steel substrate. The Technical University of Denmark and Topsoe Fuel Cell have developed an interconnect coating based on a cobalt-tungsten alloy. The purpose of the coating...... for 300 h at 800 °C. The coating was characterized with Glow Discharge Optical Spectroscopy (GDOES), Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD). The oxidation properties were evaluated by measuring weight change of coated samples of Crofer 22 H and Crofer 22 APU as a function...

Valence control of cobalt oxide thin films by annealing atmosphere

International Nuclear Information System (INIS)

Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

2011-01-01

The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

International Nuclear Information System (INIS)

Kassem, W.; Tabbal, M.; Roumie, M.

2011-01-01

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

High-pressure synthesis of fully occupied tetragonal and cubic tungsten bronze oxides

Energy Technology Data Exchange (ETDEWEB)

Ikeuchi, Yuya; Takatsu, Hiroshi; Tassel, Cedric; Goto, Yoshihiro; Murakami, Taito; Kageyama, Hiroshi [Graduate School of Engineering, Kyoto University (Japan)

2017-05-15

A high-pressure reaction yielded the fully occupied tetragonal tungsten bronze K{sub 3}W{sub 5}O{sub 15} (K{sub 0.6}WO{sub 3}). The terminal phase shows an unusual transport property featuring slightly negative temperature-dependence in resistivity (dρ/dT<0) and a large Wilson ratio of R{sub W}=3.2. Such anomalous metallic behavior possibly arises from the low-dimensional electronic structure with a van Hove singularity at the Fermi level and/or from enhanced magnetic fluctuations by geometrical frustration of the tungsten sublattice. The asymmetric nature of the tetragonal tungsten bronze K{sub x}WO{sub 3}-K{sub 0.6-y}Ba{sub y}WO{sub 3} phase diagram implies that superconductivity for x≤0.45 originates from the lattice instability because of potassium deficiency. A cubic perovskite KWO{sub 3} phase was also identified as a line phase - in marked contrast to Na{sub x}WO{sub 3} and Li{sub x}WO{sub 3} with varying quantities of x (<1). This study presents a versatile method by which the solubility limit of tungsten bronze oxides can be extended. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Tungsten behaviour under anodic polarization

International Nuclear Information System (INIS)

Vas'ko, A.T.; Patsyuk, F.N.

1980-01-01

Electrochemical investigations have been carried out to identify the state of elements of the tungsten galvanic coating. Active zones on anode polarization curves in the hydrogen region of galvanic tungsten are established. The difference in the behaviour of monocrystal and galvanic tungsten electrodes is shown to be connected with the oxidation of hydrogen in the galvanic sediment

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

Science.gov (United States)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

Tungsten

International Nuclear Information System (INIS)

Eschnauer, H.

1978-01-01

There is no substitute for tungsten in its main field of application so that the demand will not decrease, but there is a need for further important applications. If small variations are left out of account, a small but steady increase in the annual tungsten consumption can be expected. The amount of tungsten available will increase due to the exploritation of new deposits and the extension of existing mines. This tendency will probably be increased by the world-wide prospection. It is hard to make an assessment of the amount of tungsten are obtained in the People's Republic of china, the purchases of Eastern countries in the West, and the sales policy of the USA; pice forecasts are therefore hard to make. A rather interesting subject with regard to the tungsten cycle as a whole is the reprocessing of tungsten-containing wastes. (orig.) [de

Production and characterization of Si-N films obtained by r.f. magnetron sputtering

International Nuclear Information System (INIS)

Oliveira, A.; Cavaleiro, A.; Vieira, M.T.

1993-01-01

Si-N films were deposited by sputtering from an Si 3 N 4 target with different deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen content was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased films the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, particularly for biased films. Unbiased films were softer, which is attributed to the formation of silicon oxide and/or to a lower compressive stress level. (orig.)

Electrospark doping of steel with tungsten

International Nuclear Information System (INIS)

Denisova, Yulia; Shugurov, Vladimir; Petrikova, Elizaveta; Seksenalina, Malika; Ivanova, Olga; Ikonnikova, Irina; Kunitsyna, Tatyana; Vlasov, Victor; Klopotov, Anatoliy; Ivanov, Yuriy

2016-01-01

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties

Electrospark doping of steel with tungsten

Energy Technology Data Exchange (ETDEWEB)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Seksenalina, Malika, E-mail: sportmiss@bk.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irinaikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Kunitsyna, Tatyana, E-mail: kma11061990@mail.ru; Vlasov, Victor, E-mail: rector@tsuab.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Klopotov, Anatoliy, E-mail: klopotovaa@tsuab.ru [National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Ivanov, Yuriy, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation)

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.

Incorporation of tungsten metal fibers in a metal and ceramic matrix

Directory of Open Access Journals (Sweden)

V. Brozek

2017-01-01

Full Text Available Tungsten fibers have high tensile strength but a poor oxidation resistance at elevated temperatures. Using this first characteristic and to prevent oxidation of tungsten coated composite materials in which the primary requirement: reinforcement against destruction or deformation, was studied on tungsten fibers and tungsten wires which were coated by applying the metal and ceramic powders via plasma spraying device in plasma generator WSP®. Deposition took place in an atmosphere of Ar + 7 % H2, sufficient to reduce the oxidized trace amounts of tungsten.

Switchable optical layers. From the atomistic understanding of the gasochromous switching of tungsten oxide to the industrial application

International Nuclear Information System (INIS)

Salinga, C.L.

2005-01-01

The present thesis describes studies, which make an understanding of the gasochromous colouring process of tungsten dioxide films. Finally all results and their interpretations are summarized, which arose in the framework of the analyses

Features of the theories of the formation of oxide films on aluminum alloys piston diesel engines with micro-arc oxidation

Directory of Open Access Journals (Sweden)

Skryabin M.L.

2017-12-01

Full Text Available The article considers one of the promising methods of surface hardening of piston aluminum alloy – microarc oxidation. Described fundamental differences from the micro-arc oxidation anodizing and similar electrochemical processes. The schemes of formation of the barrier and outer layers surface treatment in aqueous electrolytes. Shows the mechanism of formation of the interface. Considers the formation of layers with high porosity and method of exposure. Also describes the exponential dependence of the current density from the electric field in the surface film of the base metal. The role of discharges in the formation of oxide layers on the treated surface. Proposed and described features of the three main theories of formation of oxide films on the surface of the piston: physical and geometrical model of Keller; models of formation of oxide films as a colloid formations and plasma theory (theory of oxidation with the formation of plasma in the zone of oxidation. The features of formation of films in each of the models. For the model of Keller porous oxide film is a close-Packed oxide cell, having the shape of a prism. They are based on a hexagonal prism. These cells have normal orientation to the surface of the metal. In the center of the unit cell there is one season that is a channel, whose size is determined by the composition of the electrolyte, the chemical composition of the base metal and the electrical parameters of the process of oxidation. In the micro-arc oxidation process according to this model, the beginning of the formation of cells occurs with the formation of the barrier layer, passing in the porous layer and, over time, the elonga-tion of the pores, due to the constant etching electrolyte. In the theory of formation of the oxide films as kolloidnyh formations revealed that formation of pores in the film is a result of their growth. The anodic oxide is represented by a directed electric field, the alumina gel colloidal and

Valence control of cobalt oxide thin films by annealing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

2011-02-01

The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Wettability of TiAlN films by molten aluminum

Energy Technology Data Exchange (ETDEWEB)

Shen Ping [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan) and Key Laboratory of Automobile Materials, Department of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun, 130025 (China)]. E-mail: shenping@jlu.edu.cn; Nose, Masateru [Department of Industrial Art and Craft, Takaoka National College, 180 Futagami-machi, Takaoka City, Toyama 933-8588 (Japan); Fujii, Hidetoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan); Nogi, Kiyoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan)

2006-12-05

In this study, we made an attempt to measure the wettability of the TiAlN films by molten Al at temperatures between 1073 K and 1273 K using an improved sessile drop method. The true contact angles cannot be obtained for the films deposited on the stainless steel and tungsten substrates due to considerable interdiffusion or reaction between molten Al and the substrate constituents. For the films deposited on the stable alumina single crystals and in contact with clean Al, the true contact angles are possible in the range of 80-100 deg. at 1173-1273 K and the work of adhesion is 0.77-1.08 J m{sup -2}. In the case of oxidized Al, typically at T < 1173 K, however, the wettability and the adhesion are significantly decreased.

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

International Nuclear Information System (INIS)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-01-01

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

Energy Technology Data Exchange (ETDEWEB)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-09-02

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

Fabrication of birnessite-type layered manganese oxide films for super capacitors

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

2004-07-01

Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

Photoconductivity of reduced graphene oxide and graphene oxide composite films

International Nuclear Information System (INIS)

Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

2012-01-01

A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

Self-passivating bulk tungsten-based alloys manufactured by powder metallurgy

Science.gov (United States)

López-Ruiz, P.; Ordás, N.; Lindig, S.; Koch, F.; Iturriza, I.; García-Rosales, C.

2011-12-01

Self-passivating tungsten-based alloys are expected to provide a major safety advantage compared to pure tungsten, which is at present the main candidate material for the first wall armour of future fusion reactors. WC10Si10 alloys were manufactured by mechanical alloying (MA) in a Planetary mill and subsequent hot isostatic pressing (HIP), achieving densities above 95%. Different MA conditions were studied. After MA under optimized conditions, a core with heterogeneous microstructure was found in larger powder particles, resulting in the presence of some large W grains after HIP. Nevertheless, the obtained microstructure is significantly refined compared to previous work. First MA trials were also performed on the Si-free system WCr12Ti2.5. In this case a very homogeneous structure inside the powder particles was obtained, and a majority ternary metastable bcc phase was found, indicating that almost complete alloying occurred. Therefore, a very fine and homogeneous microstructure can be expected after HIP in future work.

Self-passivating bulk tungsten-based alloys manufactured by powder metallurgy

International Nuclear Information System (INIS)

López-Ruiz, P; Ordás, N; Iturriza, I; García-Rosales, C; Lindig, S; Koch, F

2011-01-01

Self-passivating tungsten-based alloys are expected to provide a major safety advantage compared to pure tungsten, which is at present the main candidate material for the first wall armour of future fusion reactors. WC10Si10 alloys were manufactured by mechanical alloying (MA) in a Planetary mill and subsequent hot isostatic pressing (HIP), achieving densities above 95%. Different MA conditions were studied. After MA under optimized conditions, a core with heterogeneous microstructure was found in larger powder particles, resulting in the presence of some large W grains after HIP. Nevertheless, the obtained microstructure is significantly refined compared to previous work. First MA trials were also performed on the Si-free system WCr12Ti2.5. In this case a very homogeneous structure inside the powder particles was obtained, and a majority ternary metastable bcc phase was found, indicating that almost complete alloying occurred. Therefore, a very fine and homogeneous microstructure can be expected after HIP in future work.

Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

Energy Technology Data Exchange (ETDEWEB)

Gomez, Celia L. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Depablos-Rivera, Osmary, E-mail: osmarydep@yahoo.com [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Silva-Bermudez, Phaedra [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Instituto Nacional de Rehabilitación, Calz. México Xochimilco No. 289 Col. Arenal de Guadalupe, C.P.14389, Ciudad de México, D.F. (Mexico); Muhl, Stephen [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 1 (France); Camps, Enrique [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca S/N, kilómetro 36.5. La Marquesa, Municipio de Ocoyoacac, CP 52750, Estado de México (Mexico); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico)

2015-03-02

The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi{sub 2}O{sub 3} thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi{sub 2}O{sub 3} phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi{sub 2}O{sub 3} thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV.

Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

International Nuclear Information System (INIS)

Gomez, Celia L.; Depablos-Rivera, Osmary; Silva-Bermudez, Phaedra; Muhl, Stephen; Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre; Camps, Enrique; Rodil, Sandra E.

2015-01-01

The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi 2 O 3 thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi 2 O 3 phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi 2 O 3 thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV

CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

Directory of Open Access Journals (Sweden)

D. Santos-Cruz

Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

Improving the corrosion properties of magnesium AZ31 alloy GTA weld metal using microarc oxidation process

Institute of Scientific and Technical Information of China (English)

M.Siva Prasad; M.Ashfaq; N.Kishore Babu; A.Sreekanth; K.Sivaprasad; V.Muthupandi

2017-01-01

In this work,the morphology,phase composition,and corrosion properties of microarc oxidized (MAO) gas tungsten arc (GTA) weldments of AZ31 alloy were investigated.Autogenous gas tungsten arc welds were made as full penetration bead-on-plate welding under the alternating-current mode.A uniform oxide layer was developed on the surface of the specimens with MAO treatment in silicate-based alkaline electrolytes for different oxidation times.The corrosion behavior of the samples was evaluated by potentiodynamic polarization and electrochemical impedance spectroscopy.The oxide film improved the corrosion resistance substantially compared to the uncoated specimens.The sample coated for 10 min exhibited better corrosion properties.The corrosion resistance of the coatings was concluded to strongly depend on the morphology,whereas the phase composition and thickness were concluded to only slightly affect the corrosion resistance.

Stabilized chromium oxide film

Science.gov (United States)

Garwin, Edward L.; Nyaiesh, Ali R.

1988-01-01

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

International Nuclear Information System (INIS)

Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

2009-01-01

Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

Energy Technology Data Exchange (ETDEWEB)

Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

2014-12-01

Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

The disclosed transformation of pre-sputtered Ti films into nanoparticles via controlled thermal oxidation

Science.gov (United States)

Awad, M. A.; Raaif, M.

2018-05-01

Nanoparticles of TiO2 were successfully prepared from pre-sputtered Ti films using the controlled thermal oxidation. The effect of oxidation temperature on structural, morphological and optical properties in addition to photocatalysis activity of the sputtered films was tested and explained. Analysis of XRD and EDAX elucidated the enhancement in crystallization and oxygen content with the increase of oxidation temperature. SEM depicted the formation of very fine nanoparticles with no specific border on the films oxidized at 550 and 600 °C, whilst crystallites with larger size of approximately from 16 to 23 nm have been observed for the film oxidized at 650 °C. Both optical transmission and refractive index were increased with increasing the oxidation temperature. A red shift in the absorption edge was obtained for the films oxidized at 650 °C compared to that oxidized at 600 °C. The photocatalysis tests demonstrated the priority of 600 °C nanoparticle films to decompose methyl orange (MO) more than 650 °C treated film.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Magnetic properties of partially oxidized Fe films

Science.gov (United States)

Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

Physical properties characterization of WO3 films grown by hot-filament metal oxide deposition

International Nuclear Information System (INIS)

Diaz-Reyes, J.; Delgado-Macuil, R.J.; Dorantes-Garcia, V.; Perez-Benitez, A.; Balderas-Lopez, J.A.; Ariza-Ortega, J.A.

2010-01-01

WO 3 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO 3 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO 3 presents broad peaks in the range of 1100 to 3600 cm -1 . A broad band in the 2200 to 3600 cm -1 region and the peaks sited at 1645 and 1432 cm -1 are well resolved, which are originated from moisture and are assigned to ν(OH) and δ(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm -1 and around 3492 cm -1 , which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm -1 that are typical Raman peaks of crystalline WO 3 (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching (ν) and W-O bending (δ) modes, respectively. By transmittance measurements obtains that the WO 3 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.

Nanoscale reduction of graphene oxide thin films and its characterization.

Science.gov (United States)

Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

2015-07-17

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Directory of Open Access Journals (Sweden)

A. Herz

2016-03-01

Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Energy Technology Data Exchange (ETDEWEB)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

Tungsten-based composite materials for fusion reactor shields

International Nuclear Information System (INIS)

Greenspan, E.; Karni, Y.

1985-01-01

Composite tungsten-based materials were recently proposed for the heavy constituent of compact fusion reactor shields. These composite materials will enable the incorporation of tungsten - the most efficient nonfissionable inelastic scattering (as well as good neutron absorbing and very good photon attenuating) material - in the shield in a relatively cheap way and without introducing voids (so as to enable minimizing the shield thickness). It is proposed that these goals be achieved by bonding tungsten powder, which is significantly cheaper than high-density tungsten, with a material having the following properties: good shielding ability and relatively low cost and ease of fabrication. The purpose of this work is to study the effectiveness of the composite materials as a function of their composition, and to estimate the economic benefit that might be gained by the use of these materials. Two materials are being considered for the binder: copper, second to tungsten in its shielding ability, and iron (or stainless steel), the common fusion reactor shield heavy constituent

Preparation of Pt-mesoporous tungsten carbide/carbon composites via a soft-template method for electrochemical methanol oxidation

International Nuclear Information System (INIS)

Ma, Chun’an; Kang, Lingzhi; Shi, Meiqin; Lang, Xiaoling; Jiang, Yekun

2014-01-01

Highlights: • Mesoporous composite Pt-m(WC/C) is prepared by a soft template method. • The structure of phenolic gives a space limitation effect on the growth of WC. • Analysis of the effect of F127 on controlling the structure of composites. • Pt-m(WC/C) exhibits more than three times higher than Pt/C in catalytic activity. -- Abstract: This paper introduces a simple and reproducible chemical process for synthesis of Pt-mesoporous tungsten carbide/carbon composites composites Pt-m(WC/C) by means of a soft-template method. In this process, low-molecular-weight phenolic resol acted as the precursor both for carbon support and also the carbon resource of tungsten carbide. Tungsten hexachloride was used as a tungsten precursor along with different amount of triblock copolymer Pluronic F127 as pore-forming component. The best performance of Pt-m(WC/C) towards methanol oxidation is found when the mass ratios of WCl 6 :F127 is 1:0.6. The composite presents an improved methanol oxidation performance evidenced by a negative shift in onset potential, and increase of peak current density, compared with commercial Pt/C. The difference is explained by the adding of appropriate amount of F127 which facilitates the construction of mesoporous matrix structure of WC/C

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

International Nuclear Information System (INIS)

Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

Energy Technology Data Exchange (ETDEWEB)

Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

International Nuclear Information System (INIS)

Jung, Hye-Mi; Um, Sukkee

2016-01-01

Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

Characterization of tungsten silicides formed by rapid thermal annealing

International Nuclear Information System (INIS)

Siegal, M.; Santiago, J.J.; VanDerSpiegel, J.

1986-01-01

Tungsten silicide samples were formed by sputter depositing 80 nm W metal onto (100) oriented, 5 ohm-cm Si wafers. After deposition, the samples were fast radiatively processed in an RTA system using quartz-halogen tungsten lamps as radiation sources for time intervals ranging from 20 to 60s under high vacuum. Films processed at 22-25 W/cm 2 radiation with the film side of the samples oriented away from the lamps result in films which are metallic or cloudy in color, and have mixed composition as evidenced by x-ray diffraction (W, W 5 Si 3 and WSi 2 ). Films processed with the film side oriented toward the lamps show the occurrence of a phase transformation clearly nucleated at the film edge

The effect of phosphorus on the formation of tungsten dioxide: A novel morphology

International Nuclear Information System (INIS)

Hegedus, E.; Neugebauer, J.

1999-01-01

The industrial production of tungsten is based on the hydrogen reduction of tungsten oxides, ammonium paratungstate (APT) or ammonium tungsten oxide bronze (ATOB). Hydrogen reduction is applied when high purity tungsten is required and when the addition of other elements or compounds (dopants) is desired for modification of the properties of the metal powder. The first stage of the reduction is finished when WO 2 is formed and it seems that the efficient incorporation of the additives starts mainly at this reduction step. The study reported here was undertaken to investigate the effect of phosphorus dope on the morphology of the intermediate tungsten dioxide and analyze its influence on the grain size of the final tungsten metal powder. The authors observed star shaped morphology of WO 2 , a structure which has not been describe in the literature. Contrary to the well-known cauliflower shaped tungsten dioxide, these starlets are not pseudomorphic to the initial ATOB particles; they grow separately and have a great influence on the grain size of the final metal powder

Cu2O-based solar cells using oxide semiconductors

International Nuclear Information System (INIS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu 2 O heterojunction solar cells fabricated using p-type Cu 2 O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu 2 O sheets under various deposition conditions using a pulsed laser deposition method. In Cu 2 O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa 2 O 4 thin-film layer. In most of the Cu 2 O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga 2 O 3 -Al 2 O 3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (V oc ) were obtained by using a relatively small amount of MgO or Al 2 O 3 , e.g., (ZnO) 0.91 –(MgO) 0.09 and (Ga 2 O 3 ) 0.975 –(Al 2 O 3 ) 0.025 , respectively. When Cu 2 O-based heterojunction solar cells were fabricated using Al 2 O 3 –Ga 2 O 3 –MgO–ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high V oc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu 2 O heterojunction solar cells fabricated using Na-doped Cu 2 O (Cu 2 O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a V oc of 0.84 V were obtained in a MgF 2 /AZO/n-(Ga 2 O 3 –Al 2 O 3 )/p-Cu 2 O:Na heterojunction solar cell fabricated using

Cu2O-based solar cells using oxide semiconductors

Science.gov (United States)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-01-01

We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

In situ oxide dispersion strengthened tungsten alloys with high compressive strength and high strain-to-failure

International Nuclear Information System (INIS)

Huang, Lin; Jiang, Lin; Topping, Troy D.; Dai, Chen; Wang, Xin; Carpenter, Ryan; Haines, Christopher; Schoenung, Julie M.

2017-01-01

In this work a novel process methodology to concurrently improve the compressive strength (2078 MPa at a strain rate of 5 × 10"−"4 s"−"1) and strain-to-failure (over 40%) of bulk tungsten materials has been described. The process involves the in situ formation of intragranular tungsten oxide nanoparticles, facilitated by the application of a pressure of 1 GPa at a low sintering temperature of 1200 °C during spark plasma sintering (SPS). The results show that the application of a high pressure of 1 GPa during SPS significantly accelerates the densification process. Concurrently, the second phase oxide nanoparticles with an average grain size of 108 nm, which are distributed within the interiors of the W grains, simultaneously provide strengthening and plasticity by inhibiting grain growth, and generating, blocking, and storing dislocations. - Graphical abstract: In this work a novel process methodology to concurrently improve the compressive strength (2078 MPa at a strain rate of 5 × 10"−"4 s"−"1) and strain-to-failure (over 40%) of bulk W materials has been described. The process involves the in situ formation of intragranular tungsten oxide nanoparticles, facilitated by the application of a pressure of 1 GPa at a low sintering temperature of 1200 °C during spark plasma sintering (SPS).

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

FABRICATION OF GAS-FILLED TUNGSTEN-COATED GLASS SHELLS

International Nuclear Information System (INIS)

NIKROO, A; BAUGH, W; STEINMAN, D.A.

2003-09-01

OAK-B135 Deuterium (D 2 ) filled glass shells coated with a high Z element are needed for high energy density (HED) experiments by researchers at Los Alamos National Laboratory. They report here on our initial attempt to produce such shells. Glass shells made using the drop tower technique were coated with gold, palladium or tungsten, or a mixture of two of these elements. It was found that gold and palladium coatings did not stick well to the glass and resulted in poor or delaminated films. Tungsten coatings resulted in films suitable for these targets. Bouncing of shells during coating resulted in uniform tungsten coatings, but the surface of such coatings were filled with small nodules. Proper agitation of shells using a tapping technique resulted in smooth films with minimal particulate contamination. For coating rates of ∼ 0.15 (micro)m/hr coatings with ∼ 2 nm RMS surface finish could be deposited. The surface roughness of coatings at higher rates, 0.7 (micro)m/hr, was considerably worse (∼ 100 nm RMS). The columnar structure of the coatings allowed permeation filling of the tungsten coated glass shells with deuterium at 300 C

Study of tungsten based positron moderators

International Nuclear Information System (INIS)

Lucio, O.G. de; Pérez, M.; Mendoza, U.; Morales, J.G.; Cruz, J.C.; DuBois, R.D.

2015-01-01

Positrons and how they interact with matter has a growing interest in many fields. Most of their uses require the production of slow positron beams with a well-defined energy, but since these particles are usually generated by means of a radioactive source, they are fast and with a broad distribution of energies. For this reason it is necessary to moderate them to lower energies via inelastic collisions. Then, they can be accelerated to the desired energies. This requires the use of a moderator. Tungsten is one of the most commonly used moderator materials because of its reasonable efficiency and relatively low cost. In this work we present different methods of producing transmission tungsten-based moderators, with particular interest in a combination of tungsten thin foils and grids. We also show results about the characterization of these moderators by ion beam analysis and microscopy techniques along with their relative moderation efficiencies

Study of tungsten based positron moderators

Energy Technology Data Exchange (ETDEWEB)

Lucio, O.G. de; Pérez, M.; Mendoza, U.; Morales, J.G.; Cruz, J.C. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México DF (Mexico); DuBois, R.D. [Missouri University of Science and Technology, Rolla, MO 65409 (United States)

2015-07-01

Positrons and how they interact with matter has a growing interest in many fields. Most of their uses require the production of slow positron beams with a well-defined energy, but since these particles are usually generated by means of a radioactive source, they are fast and with a broad distribution of energies. For this reason it is necessary to moderate them to lower energies via inelastic collisions. Then, they can be accelerated to the desired energies. This requires the use of a moderator. Tungsten is one of the most commonly used moderator materials because of its reasonable efficiency and relatively low cost. In this work we present different methods of producing transmission tungsten-based moderators, with particular interest in a combination of tungsten thin foils and grids. We also show results about the characterization of these moderators by ion beam analysis and microscopy techniques along with their relative moderation efficiencies.

Local mechanical and electromechanical properties of the P(VDF-TrFE)-graphene oxide thin films

Science.gov (United States)

Silibin, M. V.; Bystrov, V. S.; Karpinsky, D. V.; Nasani, N.; Goncalves, G.; Gavrilin, I. M.; Solnyshkin, A. V.; Marques, P. A. A. P.; Singh, Budhendra; Bdikin, I. K.

2017-11-01

Recently, many organic materials, including carbon materials such as carbon nanotubes (CNTs) and graphene (single-walled carbon sheet structure) were studied in order to improve their mechanical and electrical properties. In particular, copolymers of poly (vinylidene fluoride) and poly trifluoroethylene [P(VDF-TrFE)] are promising materials, which can be used as probes, sensors, actuators, etc. Composite thin film of the copolymer P(VDF-TrFE) with graphene oxide (GO) were prepared by spin coating. The obtained films were investigated using piezoresponse force microscopy (PFM). The switching behavior, piezoelectric response, dielectric permittivity and mechanical properties of the films were found to depend on the presence of GO. For understanding the mechanism of piezoresponse evolution of the composite we used models of PVDF chain, its behavior in electrical field and computed the data for piezoelectric coefficients using HyperChem software. The summarized models of graphene oxide based on graphene layer from 96 carbon atoms C: with oxygen and OH groups and with COOH groups arranged by hydrogen were used for PVDF/Graphene oxide complex: 1) with H-side (hydrogen atom) connected from PVDF to graphene oxide, 2) with F-side (fluorine atom) connected from PVDF graphene oxide and 3) Graphene Oxide/PVDF with both sides (sandwich type). Experimental results qualitatively correlate with those obtained in the calculations.

Direct atomic-emission determination of tungsten in molybdenum oxide in dc arc

International Nuclear Information System (INIS)

Zolotareva, N.I.; Grazhulene, S.S.

2007-01-01

A method of direct atomic-emission determination of tungsten impurity in molybdenum trioxide of high purity in dc arc is presented. Chemically active additives of elementary sulfur and gallium oxide are used to optimize W evaporation rate and residence time in the arc plasma. The procedure is easy to use and provides the limit of W determination at a level of 2x10 -4 wt. % [ru

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Preparation of Ba1-xSrxWO4 and Ba1-xCaxWO4 films on tungsten plate by mechanically assisted solution reaction at room temperature

International Nuclear Information System (INIS)

Rangappa, Dinesh; Fujiwara, Takeshi; Watanabe, Tomoaki; Yoshimura, Masahiro

2008-01-01

Preparation of the alkaline earth tungstate films such as Ba 1-x Sr x WO 4 and Ba 1-x Ca x WO 4 on the tungsten substrate was studied with a simple solution process assisted with the ball rotation at room temperature. The solid solution formation and limitations, the effect of oxidizing agent H 2 O 2 and alkaline earth ions concentration on the dissolution of W substrate and the growth of Ba 1-x Sr x WO 4 and Ba 1-x Ca x WO 4 films were studied in detail. The ball rotation assistance plays a very important role to enhance the dissolution of the W substrate and mass transport of the reactant species such as alkaline earth ions and WO 4 2- ions onto the solid/solution interface region, where precipitation occurs. Therefore, the rate of film formation was accelerated by the ball rotation assistance to the reaction system. Ba-rich Ba 1-x Sr x WO 4 and Ba 1-x Ca x WO 4 films were formed without high energy or high temperature treatment

The formation of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia)

2016-07-30

Highlights: • Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al{sub 2}O{sub 3}/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na{sub 2}WO{sub 4}·2H{sub 2}O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al{sub 2}O{sub 3}, ZnO, metallic tungsten and WO{sub 3}. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al{sub 2}O{sub 3}/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is higher thanof undoped Al{sub 2}O{sub 3}/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na{sub 2}WO{sub 4}·2H{sub 2}O. Tungsten in Al{sub 2}O{sub 3}/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the

Phase transformations in sputter-deposited W-doped TiO2 films during annealing in air

International Nuclear Information System (INIS)

Saladukhin, I. A.; Abadias, G.

2013-01-01

Pure and tungsten-doped TiO 2 films are characterized as amorphous in the as-deposited state by XRD. A crystallization of titanium dioxide occurs during their annealing in air. Depending on the tungsten and nitrogen doping level, anatase or rutile phase formation is observed. Both of these phases are thermally stable in all interval of the temperatures used during annealing. Phase composition and lattice parameter analysis indicates on the formation of substitutional Ti 1 -xW x O 2 films. N-doped Ti 0 .75W 0 .25O 2 film is more resistant against high-temperature oxidation as compared to Ti 0 .74W 0 .26O 2 film and, especially, as compared to Ti 0 .60W 0 .40O 2 film. (authors)

The annealing effect on work function variation of WN{sub x}C{sub y} films deposited by remote plasma atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyunjung; Shin, Changhee; Lim, Heewoo; Kim, Manseok [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Jang, Woochool; Lee, Kunyoung [Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of); Yuh, Junhan [Division of Steel Solution, POSCO, Seoul (Korea, Republic of); Jeon, Hyeongtag [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of)

2017-07-15

Tungsten-nitrogen-carbide (WN{sub x}C{sub y}) thin films were investigated as the metal gate of complementary metal-oxide-semiconductor (CMOS) devices. WN{sub x}C{sub y} thin films were deposited by employing the remote plasma atomic layer deposition (RPALD) using a bis(tert-butylimido) bis (dimethylamido) tungsten (BTBMW) precursor and hydrogen plasma as a reactant. The growth rate of the WN{sub x}C{sub y} films was about 0.12 nm/cycle. X-ray diffraction (XRD) analysis indicated that the films consisted of a mixture of tungsten carbide and tungsten nitride phases. The atomic force microscope (AFM) analysis further confirmed that the WN{sub x}C{sub y} film surfaces deposited by RPALD were smooth. In addition, the chemical bonding state analysis showed that the WN{sub x}C{sub y} films consisted of WN, WC, and WO phases. To measure the work function of the WN{sub x}C{sub y} film, a MOSCAP (metal oxide semiconductor capacitor) stack was fabricated and the flat band voltage was measured by current-voltage (C-V) measurements. A WN{sub x}C{sub y} work function value of 4.91 eV was suitable for p-MOS and the work function of the WN{sub x}C{sub y} films varied depending on the annealing treatment, and was higher than the work function of the as-deposited WN{sub x}C{sub y} film. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Polythiophene films obtained by polymerization under atmospheric pressure plasma conditions

Energy Technology Data Exchange (ETDEWEB)

Teslaru, T.; Topala, I., E-mail: ionut.topala@uaic.ro; Dobromir, M.; Pohoata, V.; Curecheriu, L.; Dumitrascu, N.

2016-02-01

The present work describes the experimental arrangement used to initiate polymerization reactions of thiophene monomer based on a dielectric barrier discharge with plane – parallel geometry, working at atmospheric pressure in argon, in turn to obtain conductive polymeric films for different applications. The resulting plasma polymerized polythiophene (pPTh) film was characterized by FT-IR, UV–Vis, XPS spectroscopy, AFM and contact angle measurements. Characterization of pPTh films showed a higher hydrophobic character and roughness, as compared with films obtained by chemical methods, and the thickness is depending on polymerization duration. Also it can conclude that our samples represent oxidised state of pPTh. As a possible application, it analysed in situ the iodine absorption phenomenon in the pPTh matrix and its time evolution by UV–Vis spectroscopy. The presence of iodine 3d{sub 5/2} and 3d{sub 3/2} peaks in the pPTh sample after absorption was identified by XPS spectroscopy. The hydrophobic pPTh film is transformed in a super hydrophilic film after absorption of iodine vapors. - Highlights: • We obtained polythiophene films (pPTh) by atmospheric pressure plasma technique. • The pPTh films showed a hydrophobic character and conducting properties. • The pPTh films were used as sensor for iodine vapors in biological environment.

Structural and optical properties of electrodeposited molybdenum oxide thin films

International Nuclear Information System (INIS)

Patil, R.S.; Uplane, M.D.; Patil, P.S.

2006-01-01

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

Nucleation and adhesion of diamond films on Co cemented tungsten carbide

Energy Technology Data Exchange (ETDEWEB)

Polini, R.; Santarelli, M.; Traversa, E.

1999-12-01

Diamond deposits were grown using hot filament chemical vapor deposition (CVD) on pretreated Co cemented tungsten carbide (WC-Co) substrates with an average grain size of 6 {micro}m. Depositions were performed with 0.5 or 1.0% methane concentration and with substrate temperatures ranging from 750 to 1,000 C. Diamond nucleation densities were measured by scanning electron microscopy. Scratched and bias-enhanced nucleation pretreated substrates showed the larger nucleation densities. Etching of the WC performed by Murakami's reagent, followed by surface-Co dissolution (MP pretreatment), led to a roughened but scarcely nucleating surface. The performance of a scratching prior to the MP pretreatment allowed one to increase the nucleation density, due scratching-induced defects, confined in the outermost layer of WC grains, which act as nucleation sites. Smaller nucleation densities were observed with increasing the substrate temperature and reducing the methane concentration, confirming that diamond nucleates via a heterogeneous process. The adhesion of continuous films was evaluated by the reciprocal of the slope of crack radius-indentation load functions. The substrate pretreatments mainly affected the film adhesion, while the influence of CVD process conditions was minor. The two main factors that improve the diamond film adhesion are the coating-substrate contact area and the surface-Co removal.

Polyhydroxyester films obtained by non-catalyzed melt-polycondensation of natural occurring fatty polyhydroxyacids.

Directory of Open Access Journals (Sweden)

Jose Jesus Benitez

2015-08-01

Full Text Available Free-standing polyesters films from mono and polyhydroxylated fatty acids (C16 and C18 have been obtained by non-catalyzed melt-condensation polymerization in air at 150°C. Chemical characterization by Fourier Transform Infrared Spectroscopy (FTIR and 13C Magic Angle Spinning Nuclear Magnetic Resonance (13C MAS-NMR has confirmed the formation of the corresponding esters and the occurrence of hydroxyl partial oxidation which extent depends on the type of hydroxylation of the monomer (primary or secondary. Generally, polyester films obtained are hydrophobic, insoluble in common solvents, amorphous and infusible as revealed by X-ray Diffraction (XRD and Differential Scanning Calorimetry (DSC. In -polyhydroxy acids, esterification reaction with primary hydroxyls is preferential and, therefore, the structure can be defined as linear with variable branching depending on the amount of esterified secondary hydroxyls. The occurrence side oxidative reactions like the diol cleavage are responsible for chain cross-linking. Films are thermally stable up to 200-250°C though this limit can be extended up to 300°C in the absence of ester bonds involving secondary hydroxyls. By analogy with natural occurring fatty polyesters (i.e. cutin in higher plants these polymers are proposed as biodegradable and non-toxic barrier films or coatings to be used, for instance, in food packing

Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Lu, Zihong

1995-01-01

The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

Influence of annealing on texture properties of cerium oxide thin films

International Nuclear Information System (INIS)

Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

2013-01-01

Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

Directory of Open Access Journals (Sweden)

D. B. DUPARE

2009-02-01

Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

Preparation of Pt-mesoporous tungsten carbide/carbon composites via a soft-template method for electrochemical methanol oxidation

Energy Technology Data Exchange (ETDEWEB)

Ma, Chun’an, E-mail: science@zjut.edu.cn; Kang, Lingzhi; Shi, Meiqin; Lang, Xiaoling; Jiang, Yekun

2014-03-05

Highlights: • Mesoporous composite Pt-m(WC/C) is prepared by a soft template method. • The structure of phenolic gives a space limitation effect on the growth of WC. • Analysis of the effect of F127 on controlling the structure of composites. • Pt-m(WC/C) exhibits more than three times higher than Pt/C in catalytic activity. -- Abstract: This paper introduces a simple and reproducible chemical process for synthesis of Pt-mesoporous tungsten carbide/carbon composites composites Pt-m(WC/C) by means of a soft-template method. In this process, low-molecular-weight phenolic resol acted as the precursor both for carbon support and also the carbon resource of tungsten carbide. Tungsten hexachloride was used as a tungsten precursor along with different amount of triblock copolymer Pluronic F127 as pore-forming component. The best performance of Pt-m(WC/C) towards methanol oxidation is found when the mass ratios of WCl{sub 6}:F127 is 1:0.6. The composite presents an improved methanol oxidation performance evidenced by a negative shift in onset potential, and increase of peak current density, compared with commercial Pt/C. The difference is explained by the adding of appropriate amount of F127 which facilitates the construction of mesoporous matrix structure of WC/C.