Deuterium trapping at vacancy clusters in electron/neutron-irradiated tungsten studied by positron annihilation spectroscopy

Science.gov (United States)

Toyama, T.; Ami, K.; Inoue, K.; Nagai, Y.; Sato, K.; Xu, Q.; Hatano, Y.

2018-02-01

Deuterium trapping at irradiation-induced defects in tungsten, a candidate material for plasma facing components in fusion reactors, was revealed by positron annihilation spectroscopy. Pure tungsten was electron-irradiated (8.5 MeV at ∼373 K and to a dose of ∼1 × 10-3 dpa) or neutron-irradiated (at 573 K to a dose of ∼0.3 dpa), followed by post-irradiation annealing at 573 K for 100 h in deuterium gas of ∼0.1 MPa. In both cases of electron- or neutron-irradiation, vacancy clusters were found by positron lifetime measurements. In addition, positron annihilation with deuterium electrons was demonstrated by coincidence Doppler broadening measurements, directly indicating deuterium trapping at vacancy-type defects. This is expected to cause significant increase in deuterium retention in irradiated-tungsten.

Positron annihilation studies of high dose Sb implanted silicon

International Nuclear Information System (INIS)

Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

2005-01-01

The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Suzuki, R.; Ohdaira, T.

2005-01-01

ZnO crystals were implanted with N + , O + , and Al + , and co-implanted with O + /N + and Al + /N + ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N + -implanted and Al + /N + co-implanted samples, these vacancy clusters are only partially annealed at 800 deg. C, as compared with their entire recovery in the O + - and Al + -implanted samples at 800-900 deg. C, suggesting a strong interaction between nitrogen and vacancy clusters. However, in the O + /N + co-implanted sample, most vacancy clusters disappear at 800 deg. C. Probably oxygen scavenges nitrogen to enhance the annealing of the vacancy clusters. Upon further annealing at 1000-1100 deg. C, nitrogen also forms stable complexes with thermally generated vacancies. These nitrogen-related vacancy complexes need high-temperature annealing at 1200-1250 deg. C to be fully removed

On the positron-trapping states of metal mono-vacancies

International Nuclear Information System (INIS)

Sankar, S.; Iyakutti, K.

1987-07-01

A model calculation based on the static dielectric screening theory has been performed to estimate the probable number of positron-trapping levels in metal mono-vacancies and it is shown that there cannot be more than one. (author). 8 refs, 1 tab

N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

International Nuclear Information System (INIS)

Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

2004-01-01

Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

Hydrogen isotope in erbium oxide: Adsorption, penetration, diffusion, and vacancy trapping

International Nuclear Information System (INIS)

Mao, Wei; Chikada, Takumi; Suzuki, Akihiro; Terai, Takayuki; Matsuzaki, Hiroyuki

2015-01-01

Highlights: • H adsorption on cubic Er 2 O 3 surface results in electron transfer from H to the surface. • The H penetration energy of at least 1.6 eV is required for cubic Er 2 O 3 surface. • The dominated mechanisms of H diffusion in bulk Er 2 O 3 are elucidated. • H diffusion near or at vacancies in Er 2 O 3 is an exothermic reaction. - Abstract: In this study, we report results using first-principles density functional theory calculations for four critical aspects of the interaction: H adsorption on Er 2 O 3 surface, surface-to-subsurface penetration of H into Er 2 O 3 , bulk diffusion of H in Er 2 O 3 , and trapping of H at vacancies. We identify surface stable adsorption positions and find that H prefers to transfer electrons to the surfaces and form covalent bonds with the nearest neighboring four oxygen atoms. For low surface coverage of H as in our case (0.89 × 10 14 H/cm 2 ), a penetration energy of at least 1.60 eV is required for cubic Er 2 O 3 surfaces. Further, the H diffusion barrier between the planes defined by Er 2 O 3 units along the favorable <1 1 1> direction is found to be very small – 0.16 eV – whereas higher barriers of 0.41 eV and 1.64 eV are required for diffusion across the planes, somewhat higher than the diffusion energy barrier of 0.20 eV observed experimentally at 873 K. In addition, we predict that interstitial H is exothermically trapped when it approaches a vacancy with the vacancy defect behaving as an electron trap since the H-vacancy defect is found to be more stable than the intrinsic defect

N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

2004-01-21

Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

Trapping of deuterium in krypton-implanted nickel

International Nuclear Information System (INIS)

Frank, R.C.; McManus, S.P.; Rehn, L.E.; Baldo, P.

1986-01-01

Krypton ions with energy 600 keV were implanted in nickel to fluences of 2 x 10 16 cm -2 under three different conditions. Deuterium was subsequently introduced into the implanted regions by electrolysis at room temperature. After the diffusible deuterium was permitted to escape, the 2 H( 3 He, 1 H) 4 He nuclear reaction was used to analyze for the trapped deuterium during an isochronal annealing program. The region implanted at 100 0 C with no higher temperature anneal had the largest number of traps; the region implanted at 100 0 C and annealed for 100 min at 500 0 C had considerably less; the region implanted at 500 0 C had the least. Electron diffraction patterns confirmed the existence of solid crystalline krypton in all three regions. Transmission electron microscope studies revealed precipitates with an average diameter of 8 nm in the region implanted at 500 0 C. The two regions implanted at 100 0 C contained smaller precipitates. Trap binding enthalpies were obtained by math modeling. In addition to the traps with binding enthalpy of 0.55 eV reported earlier by other investigators for helium implanted in nickel, a smaller number of traps with binding enthalpies up to 0.83 eV were also found. The trapping of deuterium by various types of imperfections, including the solid krypton precipitates, is discussed

Hydrogen isotope in erbium oxide: Adsorption, penetration, diffusion, and vacancy trapping

Energy Technology Data Exchange (ETDEWEB)

Mao, Wei, E-mail: mao@nuclear.jp [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); The University Museum, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-0032 (Japan); Chikada, Takumi [Department of Chemistry, Graduate School of Science, Shizuoka University, 836 Ohya, Suruga-ku, Shizuoka 422-8529 (Japan); Suzuki, Akihiro [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22, Shirakata-shirane, Tokai, Naka 319-1188, Ibaraki (Japan); Terai, Takayuki [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Matsuzaki, Hiroyuki [The University Museum, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-0032 (Japan)

2015-03-15

Highlights: • H adsorption on cubic Er{sub 2}O{sub 3} surface results in electron transfer from H to the surface. • The H penetration energy of at least 1.6 eV is required for cubic Er{sub 2}O{sub 3} surface. • The dominated mechanisms of H diffusion in bulk Er{sub 2}O{sub 3} are elucidated. • H diffusion near or at vacancies in Er{sub 2}O{sub 3} is an exothermic reaction. - Abstract: In this study, we report results using first-principles density functional theory calculations for four critical aspects of the interaction: H adsorption on Er{sub 2}O{sub 3} surface, surface-to-subsurface penetration of H into Er{sub 2}O{sub 3}, bulk diffusion of H in Er{sub 2}O{sub 3}, and trapping of H at vacancies. We identify surface stable adsorption positions and find that H prefers to transfer electrons to the surfaces and form covalent bonds with the nearest neighboring four oxygen atoms. For low surface coverage of H as in our case (0.89 × 10{sup 14} H/cm{sup 2}), a penetration energy of at least 1.60 eV is required for cubic Er{sub 2}O{sub 3} surfaces. Further, the H diffusion barrier between the planes defined by Er{sub 2}O{sub 3} units along the favorable <1 1 1> direction is found to be very small – 0.16 eV – whereas higher barriers of 0.41 eV and 1.64 eV are required for diffusion across the planes, somewhat higher than the diffusion energy barrier of 0.20 eV observed experimentally at 873 K. In addition, we predict that interstitial H is exothermically trapped when it approaches a vacancy with the vacancy defect behaving as an electron trap since the H-vacancy defect is found to be more stable than the intrinsic defect.

Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation

International Nuclear Information System (INIS)

Roth, E.G.; Holland, O.W.; Duggan, J.L.

1999-01-01

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectrometry was used to profile the dopant distributions. copyright 1999 American Institute of Physics

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Naramoto, H.

2007-01-01

In this work, we implanted B + , O + , Al + , and P + ions into ZnO with energy of 50-380 keV and total doses of 4 x 10 15 cm -2 for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B + and Al + -implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O + and P + ions, which are heavier than B + and Al + , the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z.Q. [Department of Physics, Wuhan University (China); Maekawa, M.; Kawasuso, A.; Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, Gunma (Japan)

2007-07-01

In this work, we implanted B{sup +}, O{sup +}, Al{sup +}, and P{sup +} ions into ZnO with energy of 50-380 keV and total doses of 4 x 10{sup 15} cm{sup -2} for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B{sup +} and Al{sup +}-implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O{sup +} and P{sup +} ions, which are heavier than B{sup +} and Al{sup +}, the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The influence of positron trapping at vacancies on a pattern of the Fermi surface of #betta#-brass studied by positron annihilation

International Nuclear Information System (INIS)

Rozenfeld, B.; Chabik, S.; Pajak, J.

1982-01-01

Angular correlations of positron annihilation quanta (ACPAQ) have been measured for differently oriented monocrystalline samples of the ordered #betta#-brass under conditions permitting the neglecting of the trapping of positrons at vacancies as well as in the case when almost all the positrons annihilate being trapped at vacancies. It has been shown that trapping of positrons at vacancies can make the observation of the directional anisotropy in electron momentum distribution impossible. (Auth.)

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

International Nuclear Information System (INIS)

Cho, C.R.; Rozgonyi, G.A.; Yarykin, N.; Zuhr, R.A.

1999-01-01

The formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion

Defect trapping of deuterium implanted in aluminium

International Nuclear Information System (INIS)

Kido, Y.; Kakeno, M.; Yamada, K.; Hioki, T.; Kawamoto, J.

1982-01-01

The behaviour of deuterium implanted in Al was studied by the D( 3 He,p) 4 He and the D(d,p)T nuclear reactions. Changes of the depth profiles of the deuterium after heat treatments indicated that the implanted deuterium was trapped by the defect produced during the deuterium implantation and the release probability of the trapped deuterium increased as the specimen temperature was raised. Assuming a thermal equilibrium locally in the region of high defect concentration, the trapping energy of deuterium in Al was determined to be 0.12eV. Since the release probability for the single crystal was considerably larger than that for the polycrystal specimens, the deuterium was considered to be strongly trapped in the grain boundaries. Distributions of displaced Al atoms and the recovery of the lattice damage by annealing were measured by the channelling technique. (author)

Trapping of positron in gallium arsenide: evidencing of vacancies and of ions with a negative charge

International Nuclear Information System (INIS)

Pierre, F.

1989-12-01

Vacancy type defects in Ga As as grown and irradiated by electrons are characterized by lifetime of positrons. Positron lifetime increases from 230 ps to 258 and 295 ps in presence of native vacancies in n type Ga As. Configuration of native vacancies changes when Fermi level crosses energy levels localized in the forbidden zone at 0.035eV and at 0.10eV from the bottom of the conduction band. Native vacancies are identified to arsenic vacancies with or without other point defects. Positron lifetime increases from 230 to 260 ps in presence of vacancies produced by low temperature irradiation negative ions are also produced. In irradiated Ga As, these ions trap positrons in competition with vacancies produced by irradiation, showing they have a negative charge. Two annealing zones between 180-300K and 300-600K are presented by vacancies. Ions do not anneal below ambient temperature. Vacancies and negative ions are identified respectively to gallium vacancies and gallium antisite [fr

Double vacancy on BN layer: A natural trap for Hydrogen Molecule

International Nuclear Information System (INIS)

Arellano, J S

2015-01-01

A pair of vacancies, one of boron and other of nitrogen atom at a flat layer becomes a natural trap to capture a hydrogen molecule at the center of the cavity defined by the empty space left by the lack of a nitrogen and a boron atom at the perfect BN layer formed by 16 N atoms and 16 B atoms. The adsorption of the hydrogen molecule is compared with the equivalent graphene layer with a pair of carbon vacancies. The little increase in the BN cell parameter respect to the graphene cell parameter, besides the differences between N, B and C atoms helps to explain the easier adsorption on the defective BN layer

Vacancy complexes induce long-range ferromagnetism in GaN

KAUST Repository

Zhang, Zhenkui

2014-11-14

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Vacancy complexes induce long-range ferromagnetism in GaN

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhenkui; Schwingenschlögl, Udo, E-mail: Udo.Schwingenschlogl@kaust.edu.sa, E-mail: Iman.Roqan@kaust.edu.sa; Roqan, Iman S., E-mail: Udo.Schwingenschlogl@kaust.edu.sa, E-mail: Iman.Roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

2014-11-14

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μ{sub B}, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Vacancy complexes induce long-range ferromagnetism in GaN

KAUST Repository

Zhang, Zhenkui; Schwingenschlö gl, Udo; Roqan, Iman S.

2014-01-01

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions

International Nuclear Information System (INIS)

Kobayashi, Makoto; Suzuki, Sachiko; Wang, Wanjing; Kurata, Rie; Kida, Katsuya; Oya, Yasuhisa; Okuno, Kenji; Ashikawa, Naoko; Sagara, Akio; Yoshida, Naoaki

2009-01-01

The trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions was investigated by thermal desorption spectroscopy (TDS) and x-ray photoelectron spectroscopy (XPS). The D 2 TDS spectrum consisted of three desorption stages, namely desorption of deuterium trapped by intrinsic defects, ion-induced defects and carbon with the formation of the C-D bond. Although the deuterium retention trapped by intrinsic defects was almost constant, that by ion-induced defects increased as the ion fluence increased. The retention of deuterium with the formation of the C-D bond was saturated at an ion fluence of 0.5x10 22 D + m -2 , where the major process was changed from the sputtering of tungsten with the formation of a W-C mixture to the formation of a C-C layer, and deuterium retention as the C-D bond decreased. It was concluded that the C-C layer would enhance the chemical sputtering of carbon with deuterium with the formation of CD x and the chemical state of carbon would control the deuterium retention in tungsten under C + -D 2 + implantation.

Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

International Nuclear Information System (INIS)

Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

2013-01-01

Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

Loading an Optical Trap with Diamond Nanocrystals Containing Nitrogen-Vacancy Centers from a Surface

Science.gov (United States)

Hsu, Jen-Feng; Ji, Peng; Dutt, M. V. Gurudev; D'Urso, Brian R.

2015-03-01

We present a simple and effective method of loading particles into an optical trap. Our primary application of this method is loading photoluminescent material, such as diamond nanocrystals containing nitrogen-vacancy (NV) centers, for coupling the mechanical motion of the trapped crystal with the spin of the NV centers. Highly absorptive material at the trapping laser frequency, such as tartrazine dye, is used as media to attach nanodiamonds and burn into a cloud of air-borne particles as the material is swept near the trapping laser focus on a glass slide. Particles are then trapped with the laser used for burning or transferred to a second laser trap at a different wavelength. Evidence of successful loading diamond nanocrystals into the trap presented includes high sensitivity of the photoluminecscence (PL) to the excitation laser and the PL spectra of the optically trapped particles

Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

Science.gov (United States)

Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

2016-05-01

We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

Implantation damage in heavy gas implanted 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Jiang, C. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Nicolaï, J., E-mail: julien.nicolai@univ-poitiers.fr [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Declémy, A. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France); Gilabert, E. [Centre d’Etude Nucléaire de Bordeaux-Gradignan, 33175 Gradignan Cedex (France); Beaufort, M.-F.; Barbot, J.-F. [Institut Pprime, CNRS, Université de Poitiers, ENSMA, UPR 3346, Département Physique et Mécanique des Matériaux, Bd Marie et Pierre Curie, BP 30179, 86962 Futuroscope Chasseneuil Cedex (France)

2016-05-01

Single crystals of SiC were implanted with heavy inert gases (Xe, Ar) at elevated temperatures (300–800 °C) and for a large range of fluence (1 × 10{sup 12}–1 × 10{sup 15} ions cm{sup −2}). Thermodesorption measurements suggest that gas is trapped by implantation-induced vacancy-type defects impeding any gas diffusion. The damage accumulation versus dose was studied through the tensile elastic strain determined by using X-ray diffraction. Results show that at low dose the strain is predictable via a thermally activated direct impact model. The low thermal activation energy at saturation suggests a dynamic recovery process dominated by the migration of interstitial-type defects as its relaxation during post thermal annealing. As compared with light-gas implantation the heavy-gas to defect ratio is low enhancing the formation of strongly perturbed zones rather than the formation of bubble precursors.

Effects of point defect trapping and solute segregation on irradiation-induced swelling and creep

International Nuclear Information System (INIS)

Mansur, L.K.

1978-01-01

The theory of irradiation swelling and creep, generalized to include impurity trapping of point defects and impurity-induced changes in sink efficiencies for point defects, is reviewed. The mathematical framework is developed and significant results are described. These include the relation between vacancy and interstitial trapping and the effectiveness of trapping as compared to segregation-induced changes in sink efficiencies in modifying void nucleation, void growth, and creep. Current understanding is critically assessed. Several areas requiring further development are identified. In particular those given special attention are the treatment of nondilute solutions and the consequences of current uncertainties in fundamental materials properties whose importance has been identified using the theory

Electron spin resonance of nitrogen-vacancy centers in optically trapped nanodiamonds

Science.gov (United States)

Horowitz, Viva R.; Alemán, Benjamín J.; Christle, David J.; Cleland, Andrew N.; Awschalom, David D.

2012-01-01

Using an optical tweezers apparatus, we demonstrate three-dimensional control of nanodiamonds in solution with simultaneous readout of ground-state electron-spin resonance (ESR) transitions in an ensemble of diamond nitrogen-vacancy color centers. Despite the motion and random orientation of nitrogen-vacancy centers suspended in the optical trap, we observe distinct peaks in the measured ESR spectra qualitatively similar to the same measurement in bulk. Accounting for the random dynamics, we model the ESR spectra observed in an externally applied magnetic field to enable dc magnetometry in solution. We estimate the dc magnetic field sensitivity based on variations in ESR line shapes to be approximately . This technique may provide a pathway for spin-based magnetic, electric, and thermal sensing in fluidic environments and biophysical systems inaccessible to existing scanning probe techniques. PMID:22869706

Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO

Science.gov (United States)

Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

2013-02-01

Virgin MgO single crystals were implanted with 70 keV C/N/O ions at room temperature to a dose of 2 × 1017/cm2. After implantation the samples showed room temperature hysteresis in magnetization loops. The annealing effects on the magnetic properties and induced defects of these samples were determined by vibrating sample magnetometer and positron annihilation spectroscopy, respectively. The experimental results indicate that ferromagnetism can be introduced to MgO single crystals by doping with C, N or introduction of Mg related vacancy defects. However, the Mg vacancies coexistence with C or N ions in the C-/N-implanted samples may play a negative role in magnetic performance in these MgO samples. The rapid increase of magnetic moment in O-implanted sample is attributed to the formation of new type of vacancy defects.

A study of vacancy-type defects in B+-implanted SiO2/Si by a slow positron beam

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto.

1989-01-01

Variable-energy (0∼30 keV) positron beam studies have been carried out on 80 keV B + -implanted SiO 2 (43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B + -implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B + ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO 2 /Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage. (author)

Cellular structure formed by ion-implantation-induced point defect

International Nuclear Information System (INIS)

Nitta, N.; Taniwaki, M.; Hayashi, Y.; Yoshiie, T.

2006-01-01

The authors have found that a cellular defect structure is formed on the surface of Sn + ion implanted GaSb at a low temperature and proposed its formation mechanism based on the movement of the induced point defects. This research was carried out in order to examine the validity of the mechanism by clarifying the effect of the mobility of the point defects on the defect formation. The defect structure on the GaSb surfaces implanted at cryogenic temperature and room temperature was investigated by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) observation. In the sample implanted at room temperature, the sponge-like structure (a pileup of voids) was formed and the cellular structure, as observed at a low temperature, did not develop. This behavior was explained by the high mobility of the vacancies during implantation at room temperature, and the proposed idea that the defect formation process is dominated by the induced point defects was confirmed

Positron annihilation study of formation of Mg vacancy in MgO

International Nuclear Information System (INIS)

Mizuno, M.; Araki, H.; Shirai, Y.; Inoue, Y.; Sugita, K.; Mizoguchi, T.; Tanaka, I.; Adachi, H.

2004-01-01

We have investigated the formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO by a combination of positron annihilation measurement and theoretical calculations of positron lifetimes. The undoped MgO yields the shortest positron lifetime of 130 ps that is shorter than that of 166 ps previously reported using a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al or Ga dopant concentration and is saturated at around 170 ps. This result indicates that the previously reported value of 166 ps is ascribed to not the bulk but the vacancy state induced by impurities. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons. (orig.)

Positron annihilation study of formation of Mg vacancy in MgO

Energy Technology Data Exchange (ETDEWEB)

Mizuno, M.; Araki, H.; Shirai, Y. [Science and Technology Center for Atoms, Molecules and Ions Control, Osaka Univ., Osaka (Japan); Inoue, Y.; Sugita, K. [Dept. of Materials Science and Engineering, Osaka Univ., Osaka (Japan); Mizoguchi, T.; Tanaka, I.; Adachi, H. [Dept. of Materials Science and Engineering, Kyoto Univ., Kyoto (Japan)

2004-07-01

We have investigated the formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO by a combination of positron annihilation measurement and theoretical calculations of positron lifetimes. The undoped MgO yields the shortest positron lifetime of 130 ps that is shorter than that of 166 ps previously reported using a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al or Ga dopant concentration and is saturated at around 170 ps. This result indicates that the previously reported value of 166 ps is ascribed to not the bulk but the vacancy state induced by impurities. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons. (orig.)

Study by nuclear techniques of the impurity-defect interaction in implanted metals

International Nuclear Information System (INIS)

Thome, Lionel.

1978-01-01

The properties of out equilibrium alloys formed by impurity implantation are strongly influenced by radiation damage created during implantation. This work presents a study, via hyperfine interaction and lattice location experiments, of the impurity-defect interaction in ion implanted metals. When the impurity and defect concentrations in the implanted layer are small, i.e. when impurities are uniformly recoil implanted in the whole crystal volume following a nuclear reaction (Aq In experiments), the impurity interacts with its own damage cascade. In this case, a vacancy is found to be trapped by a fraction of impurities during an athermal process. The value of this fraction does not seem to depend critically on impurity and host. When the impurity and defect concentrations are such that defect cascades interact, i.e. when impurities are implanted with an isotope separator (Fe Yb experiments), the observed impurity-vacancy (or vacancy cluster) interactions depend then strongly on the nature of impurity and host. An empirical relation, which indicates the importance of elastic effects, has been found between the proportion of impurities interacting with defects and the difference between impurity and host atom radii. At implantation temperature such that vacancies are mobile, the impurity-defect interaction depends essentially on vacancy migration. A model based on chemical kinetics has been developed to account for the variation with temperature of measured quantities [fr

Annihilation momentum density of positrons trapped at vacancy-type defects in metals and alloys

International Nuclear Information System (INIS)

Bansil, A.; Prasad, R.; Benedek, R.

1988-01-01

Positron annihilation, especially the angular correlation of annihilation radiation, is a powerful tool for investigating the electronic spectra of ordered as well as defected materials. The tendency of positrons to trap at vacancy-type defects should enable this technique to study the local environment of such defects. However, we need to develop a theoretical basis for calculating the two-photon annihilation momentum density rho/sub 2gamma/(p-vector). We have recently formulated and implemented a theory of rho/sub 2gamma/(p-vector) from vacancy-type defects in metals and alloys. This article gives an outline of our approach together with a few of our results. Section 2 summarizes the basic equations for evaluating rho/sub 2gamma/(p-vector). Our Green's function-based approach is nonperturbative and employs a realistic (one-particle) muffin-tin Hamiltonian for treating electrons and positrons. Section 3 presents and discusses rho/sub 2gamma/(p-vector) results for a mono-vacancy in Cu. We have neglected the effects of electron-positron correlations and of lattice distortion around the vacancy. Section 4 comments briefly on the question of treating defects such as divacancies and metal-impurity complexes in metals and alloys. Finally, in Section 5, we remark on the form of rho/sub 2gamma/(p-vector) for a mono-vacancy in jellium. 2 figs

Improved generation of single nitrogen-vacancy centers in diamond by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Naydenov, Boris; Beck, Johannes; Steiner, Matthias; Balasubramanian, Gopalakrishnan; Jelezko, Fedor; Wrachtrup, Joerg [3. Institute of Physics, University of Stuttgart (Germany); Richter, Vladimir; Kalish, Rafi [Solid State Institute, Technion City, Haifa (Israel); Achard, Jocelyn [Laboratoire d' Ingenieurie des Materiaux et des Hautes Pressions, CNRS, Villetaneuse (France)

2010-07-01

Nitrogen-vacancy (NV) centers in diamond have recently attracted the attention of many research groups due to their possible application as quantum bits (qubits), ultra low magnetic field sensors and single photon sources. These color centers can be produced by nitrogen ion implantation, although the yield is usually below 5 % at low ion energies. Here we report an increase of the NV production efficiency by subsequently implanting carbon ions in the area of implanted nitrogen ions. This method improves the production yield by more than 50 %. We also show that very low nitrogen concentration (below 0.1 ppb) in diamond can be determined by converting the intrinsic nitrogen atoms to single NV centers and detecting the latter using a confocal microscope.

Ion implantation of boron in germanium

International Nuclear Information System (INIS)

Jones, K.S.

1985-05-01

Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

International Nuclear Information System (INIS)

Stahlbush, R.E.; Hughes, H.L.; Krull, W.A.

1993-01-01

Silicon-on-insulator, SOI, technologies are being aggressively pursued to produce high density, high speed, radiation tolerant electronics. The dielectric isolation of the buried oxide makes it possible to design integrated circuits that greatly minimize single event upset and eliminate dose-rate induced latchup and upset. The reduction of excess-silicon related defects in SIMOX by the supplemental implantation of oxygen has been examined. The supplemental implant is 6% of the oxygen dose used to form the buried oxide, and is followed by a 1,000 C anneal, in contrast to the >1,300 C anneal used to form the buried oxide layer of SIMOX. The defects examined include shallow electron traps, deep hole traps, and silicon clusters. The radiation-induced shallow electron and deep hole trapping are measured by cryogenic detrapping and isothermal annealing techniques. The low-field (3 to 6 MV/cm) electron tunneling is interpreted as due to a two phase mixture of stoichiometric SiO 2 and Si clusters a few nm in size. Single and triple SIMOS samples have been examined. All of the defects are reduced by the supplemental oxygen processing. Shallow electron trapping is reduced by an order of magnitude. Because of the larger capture cross section for hole trapping, hole trapping is not reduced as much. The low-field electron tunneling due to Si clusters is also significantly reduced. Both uniform and nonuniform electron tunneling have been observed in SIMOX samples without supplement processing. In samples exhibiting only uniform tunneling, electron capture at holes has been observed. The nonuniform tunneling is superimposed upon the uniform tunneling and is characterized by current spiking

Positron annihilation investigation and nuclear reaction analysis of helium and oxygen-implanted zirconia

International Nuclear Information System (INIS)

Grynszpan, R.I.; Saude, S.; Anwand, W.; Brauer, G.

2005-01-01

Since irradiation affects in-service properties of zirconia, we investigated the fluence dependence on production and thermal stability of defects induced by helium and oxygen-ion implantation in single crystals of yttria-fully-stabilized zirconia. In either case, depth profiling by slow positron implantation spectroscopy (SPIS) detects a distribution of vacancy-type defects peaking at 60% of the projected ion range R p . Owing to the saturation of positron-trapping occurring for low fluences, which depends on the ion mass, we could estimate a critical size of clusters ranging from 0.4 to 1.6 nm. The lack of SPIS-evidence of an open-volume excess at R p is explained by the presence of over-pressurized gas bubbles. This assumption is confirmed by Nuclear Reaction Analysis of 3 He concentration profiles, which shows that helium remains partly trapped at R p , even after annealing above 400 o C

Location of trapped charge in aluminum-implanted SiO2

International Nuclear Information System (INIS)

DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.

1978-01-01

The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

Science.gov (United States)

Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

2008-03-01

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

A=225 implantation for $^{221}$Fr source for TRIUMF atom trap

CERN Multimedia

The FrPNC Collaboration is mounting an atom trap for parity violation experiments and precision spectroscopy on francium atoms at TRIUMF's ISAC facility. We would like to use ISOLDE's capability of simultaneously implanting A=225 (while another experiment runs online) to make a long-lived source feeding $^{221}$Fr for tests of the trap. $^{225}$Ra $\\beta$-decays to $^{225}$Ac, which then $\\alpha$-decays, producing 100 keV $^{221}$Fr t$_{1/2}$= 4.8 minute recoils. The implanted A=225 source would be shipped to TRIUMF, where it would be held for several minutes at a time a few mm from the same yttrium foil that normally receives the ISAC beam. SRIM calculations imply that 20% of the $^{221}$Fr will be implanted in a 1 cm diameter spot on the yttrium. Then the yttrium foil is moved to the trap and heated to release the Fr atoms, just as in normal ISAC online operation. A test implantation will be done at 10$^{7}$/sec production for 1 day, testing whether carbon cracking on the implantation foil in the mass separ...

Energy of charged states in the acetanilide crystal: Trapping of charge-transfer states at vacancies as a possible mechanism for optical damage

Science.gov (United States)

Tsiaousis, D.; Munn, R. W.

2004-04-01

Calculations for the acetanilide crystal yield the effective polarizability (16.6 Å3), local electric field tensor, effective dipole moment (5.41 D), and dipole-dipole energy (-12.8 kJ/mol). Fourier-transform techniques are used to calculate the polarization energy P for a single charge in the perfect crystal (-1.16 eV); the charge-dipole energy WD is zero if the crystal carries no bulk dipole moment. Polarization energies for charge-transfer (CT) pairs combine with the Coulomb energy EC to give the screened Coulomb energy Escr; screening is nearly isotropic, with Escr≈EC/2.7. For CT pairs WD reduces to a term δWD arising from the interaction of the charge on each ion with the change in dipole moment on the other ion relative to the neutral molecule. The dipole moments calculated by density-functional theory methods with the B3LYP functional at the 6-311++G** level are 3.62 D for the neutral molecule, changing to 7.13 D and 4.38 D for the anion and cation, relative to the center of mass. Because of the large change in the anion, δWD reaches -0.9 eV and modifies the sequence of CT energies markedly from that of Escr, giving the lowest two CT pairs at -1.98 eV and -1.41 eV. The changes in P and WD near a vacancy are calculated; WD changes for the individual charges because the vacancy removes a dipole moment and modifies the crystal dielectric response, but δWD and EC do not change. A vacancy yields a positive change ΔP that scatters a charge or CT pair, but the change ΔWD can be negative and large enough to outweigh ΔP, yielding traps with depths that can exceed 150 meV for single charges and for CT pairs. Divacancies yield traps with depths nearly equal to the sum of those produced by the separate vacancies and so they can exceed 300 meV. These results are consistent with a mechanism of optical damage in which vacancies trap optically generated CT pairs that recombine and release energy; this can disrupt the lattice around the vacancy, thereby favoring

The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon

International Nuclear Information System (INIS)

Bakowski, A.

1985-01-01

The diffusion of ion implanted phosphorus in silicon has been studied. It was found that the diffusion coefficient is not only dependent on the phosphorus surface concentration (the concentration effect) but also on the conditions at the silicon surface (the surface effect). The phosphorus diffusion coefficient is considerably lower when the silicon surface during annealing is covered with a CVD oxide layer. It is suggested that excess vacancies generated at the surface are reponsible for both the concentration and surface effects. Enhanced phosphorus diffusion is attributed to the disturbance of thermodynamic equilibrium in the crystal through phosphorus-vacancy part formation by vacancies introduced into silicon at the surface. On the basis of the data presented, it can be concluded that two mechanisms for excess vacancy generation are involved. Assuming that phosphorus diffuses via E-centers, calculations of the concentration profiles and the diffusion coefficient were performed for different concentrations and surface conditions. (orig.)

Origin and behavior of main electron traps in Si-implanted GaAs

International Nuclear Information System (INIS)

Fang, Z.Q.; Yamamoto, H.; Look, D.C.

1990-01-01

The electron traps in Si-implanted active layers (n ∼ 10 17 cm -3 ) have been studied by capacitance and conductance DLTS techniques in conjunction with different anneal conditions, which include rapid thermal anneals at different temperatures and furnace anneals with Si 3 N 4 cap or capless in an AsH 3 atmosphere. As compared to the electron traps in as-grown bulk n-GaAs (n ∼ 4 x 10 16 cm -3 ), nearly the same electron traps, i.e. EL2, EL3, EL4, EL5, EL6, and EL9 can be observed in the Si-implanted layers. Through a comparison with the annealing behavior of the main electron traps in bulk n-GaAs, the processing associated origins of some of the traps (EL2, EL3, EL4, EL5 and EL9) observed in Si-implanted GaAs layers have been determined. For some Si-implanted capped with Si 3 N 4 and furnace annealed, traps EL3 and EL4 dominate the trap EL2. In such layers it is found that emission due to EL3 is reduced while emission from EL12 is augmented by increasing the filling pulse width from 10 μs to 5 x 10 3 μs. In this paper phenomenon is explained in terms of a defect reaction enhanced by electron capture, showing a metastability or bistability

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC

Science.gov (United States)

Igumbor, E.; Olaniyan, O.; Mapasha, R. E.; Danga, H. T.; Omotoso, E.; Meyer, W. E.

2018-05-01

Electrically active induced energy levels in semiconductor devices could be beneficial to the discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is a high energy process that produced high defect concentrations which could be removed during dopant activation annealing. On the other hand, boron (B) substituted for silicon in SiC causes a reduction in the number of defects. This scenario leads to a decrease in the dielectric properties and induced deep donor and shallow acceptor levels. Complexes formed by the N, such as the nitrogen-vacancy centre, have been reported to play a significant role in the application of quantum bits. In this paper, results of charge states thermodynamic transition level of the N and B vacancy-complexes in 4H–SiC are presented. We explore complexes where substitutional N/N or B/B sits near a Si (V) or C (V) vacancy to form vacancy-complexes (NV, NV, NV, NV, BV, BV, BV and BV). The energies of formation of the N related vacancy-complexes showed the NV to be energetically stable close to the valence band maximum in its double positive charge state. The NV is more energetically stable in the double negative charge state close to the conduction band minimum. The NV on the other hand, induced double donor level and the NV induced a double acceptor level. For B related complexes, the BV and BV were energetically stable in their single positive charge state close to the valence band maximum. As the Fermi energy is varied across the band gap, the neutral and single negative charge states of the BV become more stable at different energy levels. B and N related complexes exhibited charge state controlled metastability behaviour.

Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

Science.gov (United States)

Jiang, M.; Wang, D. D.; Chen, Z. Q.; Kimura, S.; Yamashita, Y.; Mori, A.; Uedono, A.

2013-01-01

Undoped ZnO single crystals were implanted with 300 keV Si+ ions to a dose of 6 × 1016 cm-2. A combination of X-ray diffraction (XRD), positron annihilation, Raman scattering, high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) was used to study the microstructure evolution after implantation and subsequent annealing. A very large increase of Doppler broadening S parameters in Si+-implanted region was detected by using a slow positron beam, indicating that vacancy clusters or microvoids are induced by implantation. The S parameters increase further after annealing up to 700 °C, suggesting agglomeration of these vacancies or microvoids to larger size. Most of these defects are removed after annealing up to 1100 °C. The other measurements such as XRD, Raman scattering, and PL all indicate severe damage and even disordered structure induced by Si+ implantation. The damage and disordered lattice shows recovery after annealing above 700 °C. Amorphous regions are observed by HRTEM measurement, directly testifies that amorphous phase is induced by Si+ implantation in ZnO. Analysis of the S - W correlation and the coincidence Doppler broadening spectra gives direct evidence of SiO2 precipitates in the sample annealed at 700 °C, which strongly supports the chemical effect of Si ions on the amorphization of ZnO lattice.

Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer

DEFF Research Database (Denmark)

Larsen, Arne Nylandsted; Christensen, Carsten; Petersen, Jon Wulff

1999-01-01

Migration of vacancies in crystalline, n-type silicon at room temperature from Ge+-implanted (150 keV, 5×109–1×1011 cm–2) surface layers was studied by tracing the presence of P–V pairs (E centers) in the underlying layer using deep level transient spectroscopy (DLTS). Under the conditions we have......–Et[approximate]0.15 eV that has donor character. It is argued that the center associated with this line is most probably the P2–V complex; it anneals at about 550 K. A lower limit of the RT-diffusion coefficient of the doubly charged, negative vacancy is estimated to be 4×10–11 cm2/s. ©1999 American Institute...

Vacancy identification in Co+ doped rutile TiO2 crystal with positron annihilation spectroscopy

International Nuclear Information System (INIS)

Ma Minyang; Qin Xiubo; Wang Baoyi; Wu Weiming

2013-01-01

Background: Room temperature Diluted Magnetic Semiconductor (DMS) is a critical path in the study of spin-electronic devices, but there are many disputes in the intrinsic properties and origin of the room temperature ferromagnetism. Positron annihilation spectroscopy (PAS) is a powerful technique for evaluating vacancy-type defects. Purpose: We aim to establish the relationship between the defect structure and ferromagnetism of the materials by analyzing the parameters of positron annihilation. Methods: Co-doped rutile TiO 2 films were synthesized by ion implantation and extensively studied by variable energy positron annihilation Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening (CDB) measurements with variable energy slow positron beam for identification of the vacancies. Results: The results of DBS showed that a newly formed type of vacancy could be concluded by the S-W plot and the CDB results indicated that the oxygen vacancy (Vo) complex Ti-Co-Vo and/or Ti-Vo were formed with Co ions implantation and the vacancy concentration increased with increasing dopant dose. Conclusion: We identify that the generation of Ti-Vo and/or Ti-Co-Vo vacancy complex are induced by the existence of excess Ti 3d electrons around the oxygen vacancy. (authors)

HYDROGEN VACANCY INTERACTION IN TUNGSTEN

NARCIS (Netherlands)

FRANSENS, [No Value; ELKERIEM, MSA; PLEITER, F

1991-01-01

Hydrogen-vacancy interaction in tungsten was investigated by means of the perturbed angular correlation technique, using the isotope In-111 as a probe. Hydrogen trapping at an In-111-vacancy cluster manifests itself as a change of the local electric field gradient, which gives rise to an observable

Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells

Science.gov (United States)

Mahmud, Md Arafat; Elumalai, Naveen Kumar; Upama, Mushfika Baishakhi; Wang, Dian; Gonçales, Vinicius R.; Wright, Matthew; Xu, Cheng; Haque, Faiazul; Uddin, Ashraf

2018-04-01

The current work reports the concurrent passivation of interstitial and oxygen vacancy mediated defect states in low temperature processed ZnO electron transport layer (ETL) via Ultraviolet-Ozone (UVO) treatment for fabricating highly efficient (maximum efficiency: 16.70%), triple cation based MA0.57FA0.38Rb0.05PbI3 (MA: methyl ammonium, FA: formamidinium, Rb: rubidium) perovskite solar cell (PSC). Under UV exposure, ozone decomposes to free atomic oxygen and intercalates into the interstitial and oxygen vacancy induced defect sites in the ZnO lattice matrix, which contributes to suppressed trap-assisted recombination phenomena in perovskite device. UVO treatment also reduces the content of functional hydroxyl group on ZnO surface, that increases the inter-particle connectivity and grain size of perovskite film on UVO treated ZnO ETL. Owing to this, the perovskite film atop UVO treated ZnO film exhibits reduced micro-strain and dislocation density values, which contribute to the enhanced photovoltaic performance of PSC with modified ZnO ETL. The modified PSCs exhibit higher recombination resistance (RRec) ∼40% compared to pristine ZnO ETL based control devices. Adding to the merit, the UVO treated ZnO PSC also demonstrates superior device stability, retaining about 88% of its initial PCE in the course of a month-long, systematic degradation study.

Damage, trapping and desorption at the implantation of helium and deuterium in graphite, diamond and silicon carbide

International Nuclear Information System (INIS)

Lopez, G.A.R.

1995-07-01

The production, thermal stability and structure of ion induced defects have been studied by Rutherford backscattering in channeling geometry for the implantation of helium and deuterium in graphite, diamond and silicon carbide with energies of 8 and 20 keV. At the implantation of deuterium and helium ions more defects were measured in graphite than in diamond or silicon carbide at equal experimental conditions. This is due to increased backscattering in graphite, which is caused by the splitting and tilting of crystallites and a local reordering of lattice atoms around defects. At 300 K, Helium produces more defects in all three materials than deuterium with equal depth distribution of defects. The ratio of the defects produced by helium and deuterium agrees very well with the corresponding ratio of the energy deposited in nuclear collisions. In graphite, only small concentrations of deuterium induced defects anneal below 800 K, while in diamond small concentrations of deuterium as well as of helium induced defects anneal mostly below 800 K. This annealing behavior is considered to be due to recombination of point defects. The buildup of helium and deuterium in graphite is different. The trapping of deuterium proceeds until saturation is reached, while in the case of helium trapping is interrupted by flaking. In diamond, deuterium as well as helium are trapped almost completely until at higher fluences reemission starts and saturation is reached. Two desorption mechanisms were identified for the thermal desorption of helium from base-oriented graphite. Helium implanted at low fluences desorbs diffusing to the surface, while for the implantation of high fluences the release of helium due to blistering dominates. The desorption of deuterium from graphite and diamond shows differences. While in graphite the desorption starts already at 800 K, in diamond up to 1140 K only little desorption can be observed. These differences can be explained by the different transport

Vacancy Clusters on Surfaces of Au Nanoparticles Embedded in MgO

International Nuclear Information System (INIS)

Xu, Jun; Mills, A. P. Jr.; Ueda, A.; Henderson, D. O.; Suzuki, R.; Ishibashi, S.

1999-01-01

MeV implantation of gold ions into MgO(100) followed by annealing is a method to form gold nanoparticles for obtaining modified optical properties. We show from variable-energy positron spectroscopy that clusters of 2 Mg and 2 O vacancies (v 4 ) are attached to the gold nanoparticle surfaces within the projected range (R p ) . We also find that v 4 vacancy clusters are created at depths less than R p , and extend into the region greater than R p due to damage induced by knock-on collisions. (c) 1999 The American Physical Society

HYDROGEN VACANCY INTERACTION IN MOLYBDENUM

NARCIS (Netherlands)

Abd El Keriem, M.S.; van der Werf, D.P.; Pleiter, F

1993-01-01

Vacancy-hydrogen interaction in molybdenum was investigated by means of the perturbed angular correlation technique, using the isotope In-111 as a probe. The complex InV2 turned out to trap up to two hydrogen atoms: trapping of a single hydrogen atom gives rise to a decrease of the quadrupole

Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

International Nuclear Information System (INIS)

Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

1999-01-01

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

High density nitrogen-vacancy sensing surface created via He{sup +} ion implantation of {sup 12}C diamond

Energy Technology Data Exchange (ETDEWEB)

Kleinsasser, Ed E., E-mail: edklein@uw.edu [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195-2500 (United States); Stanfield, Matthew M.; Banks, Jannel K. Q. [Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States); Zhu, Zhouyang; Li, Wen-Di [HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), Shenzhen 518000 (China); Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong (China); Acosta, Victor M. [Department of Physics and Astronomy, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Watanabe, Hideyuki [Correlated Electronics Group, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Itoh, Kohei M. [School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Fu, Kai-Mei C., E-mail: kaimeifu@uw.edu [Department of Electrical Engineering, University of Washington, Seattle, Washington 98195-2500 (United States); Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States)

2016-05-16

We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10{sup 17 }cm{sup −3} nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed 200 kHz spin resonance linewidth over 10 times narrower.

Defect evolution and impurity migration in Na-implanted ZnO

Science.gov (United States)

Neuvonen, Pekka T.; Vines, Lasse; Venkatachalapathy, Vishnukanthan; Zubiaga, Asier; Tuomisto, Filip; Hallén, Anders; Svensson, Bengt G.; Kuznetsov, Andrej Yu.

2011-11-01

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600∘C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

Mechanism of vacancy formation induced by hydrogen in tungsten

Directory of Open Access Journals (Sweden)

Yi-Nan Liu

2013-12-01

Full Text Available We report a hydrogen induced vacancy formation mechanism in tungsten based on classical molecular dynamics simulations. We demonstrate the vacancy formation in tungsten due to the presence of hydrogen associated directly with a stable hexagonal self-interstitial cluster as well as a linear crowdion. The stability of different self-interstitial structures has been further studied and it is particularly shown that hydrogen plays a crucial role in determining the configuration of SIAs, in which the hexagonal cluster structure is preferred. Energetic analysis has been carried out to prove that the formation of SIA clusters facilitates the formation of vacancies. Such a mechanism contributes to the understanding of the early stage of the hydrogen blistering in tungsten under a fusion reactor environment.

Vacancy enhanced formation and phase transition of Cu-rich precipitates in α - iron under neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Lv, G. C. [Basic Experimental Center of Natural Science, University of Science and Technology Beijing, Beijing, 100083 (China); Corrosion and Protection Center, Key Laboratory of Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing, 100083 (China); Zhang, H. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Canada, T6G2V4 (Canada); He, X. F.; Yang, W. [China Institute of Atomic Energy, Beijing, 102413 (China); Su, Y. J., E-mail: yjsu@ustb.edu.cn [Corrosion and Protection Center, Key Laboratory of Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing, 100083 (China)

2016-04-15

In this paper, we employed both molecular statics and molecular dynamics simulation methods to investigate the role of vacancies in the formation and phase transition of Cu-rich precipitates in α-iron. The results indicated that vacancies promoted the diffusion of Cu atoms to form Cu-rich precipitates. After Cu-rich precipitates formed, they further trapped vacancies. The supersaturated vacancy concentration in the Cu-rich precipitate induced a shear strain, which triggered the phase transition from bcc to fcc structure by transforming the initial bcc (110) plane into fcc (111) plane. In addition, the formation of the fcc-twin structure and the stacking fault structure in the Cu-rich precipitates was observed in dynamics simulations.

Helium interaction with vacancy-type defects created in silicon carbide single crystal

Science.gov (United States)

Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

2013-05-01

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

Helium interaction with vacancy-type defects created in silicon carbide single crystal

Energy Technology Data Exchange (ETDEWEB)

Linez, F., E-mail: florence.linez@aalto.fi [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France); Gilabert, E. [CENBG, U.R.A. 451 CNRS, Université de Bordeaux I, BP120, Le Haut Vigneau, 33175 Gradignan Cedex (France); Debelle, A. [CSNSM, Univ. Paris-Sud, CNRS-IN2P3, 91405 Orsay Campus (France); Desgardin, P.; Barthe, M.-F. [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France)

2013-05-15

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H–SiC single crystals have been implanted with 50 keV-He ions at 2 × 10{sup 14} and 10{sup 15} cm{sup −2} and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films

Directory of Open Access Journals (Sweden)

Hongtao Ren

2012-01-01

Full Text Available Undoped ZnO thin films are prepared by polymer-assisted deposition (PAD and treated by postannealing at different temperatures in oxygen or forming gases (95%  Ar+5% H2. All the samples exhibit ferromagnetism at room temperature (RT. SQUID and positron annihilation measurements show that post-annealing treatments greatly enhance the magnetizations in undoped ZnO samples, and there is a positive correlation between the magnetization and zinc vacancies in the ZnO thin films. XPS measurements indicate that annealing also induces oxygen vacancies that have no direct relationship with ferromagnetism. Further analysis of the results suggests that the ferromagnetism in undoped ZnO is induced by Zn vacancies.

First-principles study of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material

Science.gov (United States)

Duan, H.; Dong, Y. Z.; Huang, Y.; Hu, Y. H.; Chen, X. S.

2016-01-01

Electronic structures of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material are investigated using first-principles calculations. Si vacancies are too high in energy to play any role in the persistent luminescence of Sr2MgSi2O7 phosphor. Mg vacancies form easier than Sr vacancies as a result of strain relief. Among all the vacancies, O1 vacancies stand out as a likely candidate because they are the most favorable in energy and introduce an empty triply degenerate state just below the CBM and a fully-occupied singlet state at ~1 eV above the VBM, constituting in this case effective hole trap level and electron trap levels, respectively. Mg vacancies are unlikely to explain the persistent luminescence because of its too shallow electron trap level but they may compensate the hole trap associated with O1 vacancies. We yield consistent evidence for the defect physics of these vacancy defects on the basis of the equilibrium properties of Sr2MgSi2O7, total-energy calculations, and electronic structures. The persistent luminescence mechanism of Sr2MgSi2O7:Eu2+, Dy3+ phosphor is also discussed based on our results for O1 vacancies trap center. Our results provide a guide to more refined experiments to control intrinsic traps, whereby probing synthetic strategies toward new improved phosphors.

Vacancies in thermal equilibrium in Nb

International Nuclear Information System (INIS)

Nielsen, B.; Lynn, K.G.; Hurst, J.; Vehanen, A.; Schultz, P.J.

1985-06-01

We have measured the diffusion of positrons in Nb(110) in the temperature range from 300K to 2450K utilizing a variable energy positron beam. The purpose was to study the vacancy formation. However, no significant sign of vacancy trapping was observed. This could be due to a high detrapping rate caused by a low positron binding energy or due to a high vacancy formation enthalpy H/sub IV//sup F/. The last possibility is consistent with recent studies of the vacancy migration and with calculation of the positron binding energy. In this case we find the H/sub IV//sup F/ > 3 eV

Drift forces on vacancies and interstitials in alloys with radiation-induced segregation

International Nuclear Information System (INIS)

Wolfer, W.G.

1983-01-01

Radiation-induced segregation in alloys leads to compositional gradients around point defect sinks such as voids and dislocations. These compositional gradients in turn affect the drift forces on both interstitials and vacancies and thereby modify the bias. Linear irreversible thermodynamics is employed to derive the total drift force on interstitials and vacancies in substitutional binary alloys. The obtained results are evaluated for binary Fe-Ni alloys. It is shown that radiation-induced segregation produces new drift forces which can be of the same order of magnitude as the stress-induced drift force produced by edge dislocations in an alloy with uniform composition. Hence, segregation results in a significant modification of the bias for void nucleation and swelling. The additional drift forces on interstitials and vacancies are due to the compositional dependence of the formation and migration energies; due to the dependence of the point defect's strain energy on the local elastic properties; due to a coherency strain field caused by lattice parameter variations; and finally due to the Kirkendall force produced by the difference in tracer mobilities. Estimates of these forces given for Fe-Ni alloys indicate that the Kirkendall force is small compared to the other segregation-induced forces on interstitials. In contrast, the Kirkendall force seems to be the dominant one for vacancies. (orig.)

Vacancy clusters at nanoparticle surfaces

Energy Technology Data Exchange (ETDEWEB)

Xu, J.; Moxom, J.; Somieski, B.; White, C.W. [Oak Ridge National Lab., TN (United States); Mills, A.P. Jr. [Bell Labs., Lucent Technologies, Murray Hill, NJ (United States); Suzuki, R.; Ishibashi, S. [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Ueda, A.; Henderson, D. [Physics Dept., Fisk Univ., Nashville, TN (United States)

2001-07-01

We detect vacancy clusters at Au nanoparticle surfaces using a combination of positron lifetime spectroscopy, 1- detector, and 2-detector measurements of Doppler broadening of annihilation radiation. Gold nanoparticles are formed by MeV implantation of gold ions into MgO (100) followed by annealing. Clusters of two Mg and two O vacancies (v{sub 4}) are attached to the gold nanoparticle surfaces within the projected range (R{sub p}). (orig.)

Vacancy clusters at nanoparticle surfaces

International Nuclear Information System (INIS)

Xu, J.; Moxom, J.; Somieski, B.; White, C.W.; Mills, A.P. Jr.; Suzuki, R.; Ishibashi, S.; Ueda, A.; Henderson, D.

2001-01-01

We detect vacancy clusters at Au nanoparticle surfaces using a combination of positron lifetime spectroscopy, 1- detector, and 2-detector measurements of Doppler broadening of annihilation radiation. Gold nanoparticles are formed by MeV implantation of gold ions into MgO (100) followed by annealing. Clusters of two Mg and two O vacancies (v 4 ) are attached to the gold nanoparticle surfaces within the projected range (R p ). (orig.)

A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

International Nuclear Information System (INIS)

Heera, V.

1989-01-01

A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

Positron annihilation studies on nasicon analogues containing cation vacancies

International Nuclear Information System (INIS)

Sreeramalu, V.; Sreepad, H.R.; Chandrashekara, A.; Ravindrachary, V.; Gopal, S.

1990-01-01

Positron annihilation studies were carried out on the Nasicon analogue Na 2 (La, Al)Zr(PO 4 ) 3 compound for three different concentrations (2.2, 2.8 and 5.2 by wt.%) of ZrO 2 in the nutrient. Angular correlation study of annihilated photons reveals that the defect concentration is maximum for 2.8(wt.%) of ZrO 2 . Further, positron lifetime studies indicate that the positrons are trapped at cation vacancies. Application of a two state trapping model to this system made it possible to evaluate the lifetime of positrons in the Bloch state and of positrons trapped at cation vacancies. (author). 16 refs., 4 figs

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Science.gov (United States)

Cherkashin, N.; Daghbouj, N.; Seine, G.; Claverie, A.

2018-04-01

Sequential He++H+ ion implantation, being more effective than the sole implantation of H+ or He+, is used by many to transfer thin layers of silicon onto different substrates. However, due to the poor understanding of the basic mechanisms involved in such a process, the implantation parameters to be used for the efficient delamination of a superficial layer are still subject to debate. In this work, by using various experimental techniques, we have studied the influence of the He and H relative depth-distributions imposed by the ion energies onto the result of the sequential implantation and annealing of the same fluence of He and H ions. Analyzing the characteristics of the blister populations observed after annealing and deducing the composition of the gas they contain from FEM simulations, we show that the trapping efficiency of He atoms in platelets and blisters during annealing depends on the behavior of the vacancies generated by the two implants within the H-rich region before and after annealing. Maximum efficiency of the sequential ion implantation is obtained when the H-rich region is able to trap all implanted He ions, while the vacancies it generated are not available to favor the formation of V-rich complexes after implantation then He-filled nano-bubbles after annealing. A technological option is to implant He+ ions first at such an energy that the damage it generates is located on the deeper side of the H profile.

Fe-Vacancy-Induced Ferromagnetism in Tetragonal FeSe Thin Films

International Nuclear Information System (INIS)

Yong-Feng, Li; Gui-Bin, Liu; Li-Jie, Shi; Bang-Gui, Liu

2009-01-01

Motivated by recent experiments, we investigate structural, electronic, and magnetic properties of tetragonal FeSe with Fe vacancies using the state-of-the-art first-principles method. We show that Fe vacancies tend to stay in the same one of the two sublattices and thus induce ferromagnetism in the ground-state phase. Our calculated net moment is in good agreement with the experimental data available. Therefore, the ferromagnetism observed in tetragonal FeSe thin films is explained. It could be made controllable soon for spintronic applications

Vacancy-induced magnetism in BaTiO3(001) thin films based on density functional theory.

Science.gov (United States)

Cao, Dan; Cai, Meng-Qiu; Hu, Wang-Yu; Yu, Ping; Huang, Hai-Tao

2011-03-14

The origin of magnetism induced by vacancies on BaTiO(3)(001) surfaces is investigated systematically by first-principles calculations within density-functional theory. The calculated results show that O vacancy is responsible for the magnetism of the BaO-terminated surface and the magnetism of the TiO(2)-terminated surface is induced by Ti vacancy. For the BaO-terminated surface, the magnetism mainly arises from the unpaired electrons that are localized in the O vacancy basin. In contrast, for the TiO(2)-terminated surface, the magnetism mainly originates from the partially occupied O-2p states of the first nearest neighbor O atoms surrounding the Ti vacancy. These results suggest the possibility of implementing magneto-electric coupling in conventional ferroelectric materials.

Vacancy identification in Co+ doped rutile TiO2 crystal with positron annihilation spectroscopy

Science.gov (United States)

Qin, X. B.; Zhang, P.; Liang, L. H.; Zhao, B. Z.; Yu, R. S.; Wang, B. Y.; Wu, W. M.

2011-01-01

Co-doped rutile TiO2 films were synthesized by ion implantation. Variable energy positron annihilation Doppler broadening spectroscopy and coincidence Doppler broadening measurements were performed for identification of the vacancies. A newly formed type of vacancy can be concluded by the S-W plot and the CDB results indicated that the oxygen vacancy (VO) complex Ti-Co-VO and/or Ti-VO are formed with Co ions implantation and the vacancy concentration is increased with increase of dopant dose.

Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

International Nuclear Information System (INIS)

Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

2006-01-01

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact

International Nuclear Information System (INIS)

Holland, O.W.; Roth, E.G.

1997-05-01

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant

Dependence of hydrogen-induced lattice defects and hydrogen embrittlement of cold-drawn pearlitic steels on hydrogen trap state, temperature, strain rate and hydrogen content

International Nuclear Information System (INIS)

Doshida, Tomoki; Takai, Kenichi

2014-01-01

The effects of the hydrogen state, temperature, strain rate and hydrogen content on hydrogen embrittlement susceptibility and hydrogen-induced lattice defects were evaluated for cold-drawn pearlitic steel that absorbed hydrogen in two trapping states. Firstly, tensile tests were carried out under various conditions to evaluate hydrogen embrittlement susceptibility. The results showed that peak 2 hydrogen, desorbed at temperatures above 200 °C as determined by thermal desorption analysis (TDA), had no significant effect on hydrogen embrittlement susceptibility. In contrast, hydrogen embrittlement susceptibility increased in the presence of peak 1 hydrogen, desorbed from room temperature to 200 °C as determined by TDA, at temperatures higher than −30 °C, at lower strain rates and with higher hydrogen content. Next, the same effects on hydrogen-induced lattice defects were also evaluated by TDA using hydrogen as a probe. Peak 2 hydrogen showed no significant effect on either hydrogen-induced lattice defects or hydrogen embrittlement susceptibility. It was found that hydrogen-induced lattice defects formed under the conditions where hydrogen embrittlement susceptibility increased. This relationship indicates that hydrogen embrittlement susceptibility was higher under the conditions where the formation of hydrogen-induced lattice defects tended to be enhanced. Since hydrogen-induced lattice defects formed by the interaction between hydrogen and strain were annihilated by annealing at a temperature of 200 °C, they were presumably vacancies or vacancy clusters. One of the common atomic-level changes that occur in cold-drawn pearlitic steel showing higher hydrogen embrittlement susceptibility is the formation of vacancies and vacancy clusters

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC.

Science.gov (United States)

Igumbor, E; Olaniyan, O; Mapasha, R E; Danga, H T; Omotoso, E; Meyer, W E

2018-05-10

Electrically active induced energy levels in semiconductor devices could be beneficial to the discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H-SiC is a high energy process that produced high defect concentrations which could be removed during dopant activation annealing. On the other hand, boron (B) substituted for silicon in SiC causes a reduction in the number of defects. This scenario leads to a decrease in the dielectric properties and induced deep donor and shallow acceptor levels. Complexes formed by the N, such as the nitrogen-vacancy centre, have been reported to play a significant role in the application of quantum bits. In this paper, results of charge states thermodynamic transition level of the N and B vacancy-complexes in 4H-SiC are presented. We explore complexes where substitutional N[Formula: see text]/N[Formula: see text] or B[Formula: see text]/B[Formula: see text] sits near a Si (V[Formula: see text]) or C (V[Formula: see text]) vacancy to form vacancy-complexes (N[Formula: see text]V[Formula: see text], N[Formula: see text]V[Formula: see text], N[Formula: see text]V[Formula: see text], N[Formula: see text]V[Formula: see text], B[Formula: see text]V[Formula: see text], B[Formula: see text]V[Formula: see text], B[Formula: see text]V[Formula: see text] and B[Formula: see text]V[Formula: see text]). The energies of formation of the N related vacancy-complexes showed the N[Formula: see text]V[Formula: see text] to be energetically stable close to the valence band maximum in its double positive charge state. The N[Formula: see text]V[Formula: see text] is more energetically stable in the double negative charge state close to the conduction band minimum. The N[Formula: see text]V[Formula: see text] on the other hand, induced double donor level and the N[Formula: see text]V[Formula: see text] induced a double acceptor level. For B related complexes, the B[Formula: see text]V[Formula: see text] and B[Formula: see text

Deuterium trapping in ion implanted and co-deposited beryllium oxide layers

International Nuclear Information System (INIS)

Markin, A.V.; Gorodetsky, A.E.; Zakharov, A.P.; Wu, C.H.

2000-01-01

Deuterium trapping in beryllium oxide films irradiated with 400 eV D ions has been studied by thermal desorption spectroscopy (TDS). It has been found that for thermally grown BeO films implanted in the range 300 - 900 K the total deuterium retention doesn't depend whereas TDS spectra do markedly on irradiation temperature. For R.T. implantation the deuterium is released in a wide range from 500 to 1100 K. At implantation above 600 K the main portion of retained deuterium is released in a single peak centered at about 1000 K. The similar TDS peak is measured for D/BeO co-deposited layer. In addition we correlate our implantation data on BeO with the relevant data on beryllium metal and carbon. The interrelations between deuterium retention and microstructure are discussed. (orig.)

Metastable self-trapping of positrons in MgO

Science.gov (United States)

Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

1997-01-01

Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

Science.gov (United States)

Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

Anisotropic chemical strain in cubic ceria due to oxygen-vacancy-induced elastic dipoles.

Science.gov (United States)

Das, Tridip; Nicholas, Jason D; Sheldon, Brian W; Qi, Yue

2018-06-06

Accurate characterization of chemical strain is required to study a broad range of chemical-mechanical coupling phenomena. One of the most studied mechano-chemically active oxides, nonstoichiometric ceria (CeO2-δ), has only been described by a scalar chemical strain assuming isotropic deformation. However, combined density functional theory (DFT) calculations and elastic dipole tensor theory reveal that both the short-range bond distortions surrounding an oxygen-vacancy and the long-range chemical strain are anisotropic in cubic CeO2-δ. The origin of this anisotropy is the charge disproportionation between the four cerium atoms around each oxygen-vacancy (two become Ce3+ and two become Ce4+) when a neutral oxygen-vacancy is formed. Around the oxygen-vacancy, six of the Ce3+-O bonds elongate, one of the Ce3+-O bond shorten, and all seven of the Ce4+-O bonds shorten. Further, the average and maximum chemical strain values obtained through tensor analysis successfully bound the various experimental data. Lastly, the anisotropic, oxygen-vacancy-elastic-dipole induced chemical strain is polarizable, which provides a physical model for the giant electrostriction recently discovered in doped and non-doped CeO2-δ. Together, this work highlights the need to consider anisotropic tensors when calculating the chemical strain induced by dilute point defects in all materials, regardless of their symmetry.

Clustering and segregation of small vacancy clusters near tungsten (0 0 1) surface

Science.gov (United States)

Duan, Guohua; Li, Xiangyan; Xu, Yichun; Zhang, Yange; Jiang, Yan; Hao, Congyu; Liu, C. S.; Fang, Q. F.; Chen, Jun-Ling; Luo, G.-N.; Wang, Zhiguang

2018-01-01

Nanoporous metals have been shown to exhibit radiation-tolerance due to the trapping of the defects by the surface. However, the behavior of vacancy clusters near the surface is not clear which involves the competition between the self-trapping and segregation of small vacancy clusters (Vn) nearby the surface. In this study, we investigated the energetic and kinetic properties of small vacancy clusters near tungsten (0 0 1) surface by combining molecular statics (MS) calculations and object Kinetic Monte Carlo (OKMC) simulations. Results show that vacancies could be clustered with the reduced formation energy and migration energy of the single vacancy around a cluster as the respective energetic and kinetic driving forces. The small cluster has a migration energy barrier comparable to that for the single vacancy; the migration energy barriers for V1-5 and V7 are 1.80, 1.94, 2.17, 2.78, 3.12 and 3.11 eV, respectively. Clusters and become unstable near surface (0 0 1) and tend to dissociate into the surface. At the operation temperature of 1000 K, the single vacancy, V2, 2 V 3 V3 and V4 were observed to segregate to the surface within a time of one hour. Meanwhile, larger clusters survived near the surface, which could serve as nucleating center for voids near the surface. Our results suggest that under a low radiation dose, surface (0 0 1) could act as a sink for small vacancy clusters, alleviating defect accumulation in the material under a low radiation dose. We also obtained several empirical expressions for the vacancy cluster formation energy, binding energy, and trapping radius as a function of the number of vacancies in the cluster.

Effect of impurities on vacancy migration energy in Fe-based alloys

International Nuclear Information System (INIS)

Hashimoto, N.; Sakuraya, S.; Tanimoto, J.; Ohnuki, S.

2014-01-01

Effects of impurities, such as carbon, nitrogen, helium and hydrogen, on microstructural evolution in pure iron were investigated by means of a multi-beam electron microscope. Growth rate of dislocation loops were measured to calculate vacancy migration energies. In all irradiation temperature conditions, both the size and the number density of dislocation loops were increased as a function of dose. Irradiation with more impurities showed an increase in the temperature dependence of the dislocation loop growth rate compared to irradiation with little impurities. The in situ experiment indicated that the net migration energy of vacancies could be increased due to trapping by impurities, and the effect of C and N on the migration energy of vacancy would be larger than that of W, V, Ta. Furthermore, H and He would increase vacancy migration energy greater than C and N, as well as W, V, Ta. The density functional theory (DFT), applied to the atomic models of BCC iron, indicated an increase in vacancy migration energy by the trapping of impurity atoms, that is a good agreement with this in situ experiment

Generation of Nitrogen-Vacancy Center Pairs in Bulk Diamond by Molecular Nitrogen Implantation

International Nuclear Information System (INIS)

Zhao-Jun Gong; Xiang-Dong Chen; Cong-Cong Li; Shen Li; Bo-Wen Zhao; Fang-Wen Sun

2016-01-01

The coupled negatively charged nitrogen-vacancy (NV − ) center system is a promising candidate for scalable quantum information techniques. In this work, ionized nitrogen molecules are implanted into bulk diamond to generate coupled NV − center pairs. The two-photon autocorrelation measurement and optically detected magnetic resonance measurement are carried out to confirm the production of the NV − center pair. Also, both 1.3 μs decoherence time and 4.9 kHz magnetic coupling strength of the NV − center pair are measured by controlling and detecting the spin states. Along with nanoscale manipulation and detection methods, such coupled NV − centers through short distance dipole-dipole interaction would show high potential in scalable quantum information processes. (paper)

Evolution of embedded lithium nanoclusters in lithium implanted alumina

International Nuclear Information System (INIS)

Gaikwad, P.V.; Sharma, S.K.; Mukherjee, S.; Sudarshan, K.; Kshirsagar, A.; Pujari, P.K.

2016-01-01

High dose of ion implantation followed by annealing is considered a feasible way to generate thermally stable nanoclusters inside a transparent host matrix. Low energy (50 keV) Li ions have been implanted into single crystals of alumina with different fluence (1 × 10"1"5–1 × 10"1"7 ions/cm"2). The samples have been annealed at temperatures ranging from 500 to 1100 °C in air in step of 100 °C. Depth dependent Doppler broadening measurements have been carried out using high purity germanium detector coupled to a variable energy slow positron beam. Fractional area in the central and wing regions of Doppler broadened annihilation radiation spectrum, namely, S- and W- parameters, were evaluated from each spectrum. Any variation in positron annihilation probability with valence and core electrons which occurs on trapping of positrons at a defect site is reflected in these parameters. The effect of ion fluence and annealing temperature on evolution of defects and formation of embedded Li nanoclusters have been studied by indexing the variation in line shape S- (W-) parameter as a function of positron implantation depth. These studies supplemented by theoretical calculations confirm that with annealing up to 700 °C, vacancy clusters are created due to the aggregation of vacancies wherein Li nanoclusters are formed. On annealing at higher temperature, there is evidence for the breakdown of these Li clusters leaving behind vacancy clusters in the samples. - Highlights: • Embedded Li nanoclusters are efficiently created by annealing Li implanted Al_2O_3 crystal. • Depth dependent DBAR is a suitable method to characterize embedded nanoclusters. • The formation of Li nanoclusters is assisted by vacancy migration to form clusters. • At very high annealing temperature (>1000 °C), Li nanoclusters undergo breakdown. • e"+ annihilation at V_A_l site shows a unique observation i.e. a reduction in S-parameter.

Stability, magnetic and electronic properties of cobalt–vacancy defect pairs in graphene: A first-principles study

International Nuclear Information System (INIS)

Raji, Abdulrafiu T.; Lombardi, Enrico B.

2015-01-01

We report a first-principles investigation of the structural, electronic and magnetic properties of cobalt–vacancy defect complexes in graphene, within the framework of density-functional theory (DFT), incorporating DFT+U. Specifically, we consider the interactions of cobalt and vacancies in graphene, at varying separations and sub-lattices. We show that it is energetically favorable for substitutional Co in graphene to trap an additional vacancy in graphene, forming a Co–vacancy complex. In all the configurations considered, the most stable configuration is when the Co atom is embedded in a divacancy. The magnetic moment induced on the cobalt atom varies as the vacancy–cobalt separation changes, depending not only on the separation, but also on the sub-lattice of the vacancy relative to cobalt. Furthermore, for each separation and sub-lattice considered, the linear density of states of graphene is modified such that Dirac point is either not discernible or has shifted above the Fermi energy. Since individual vacancies or transition metal (TM) atoms, such as cobalt in graphene, have mostly been studied in isolation up to now, ignoring possible transition metal–vacancy interactions, these results have important implications to the fundamental understanding of TM–vacancy defect interactions in graphene

Deuterium trapping in tungsten

Science.gov (United States)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

International Nuclear Information System (INIS)

Poon, M.

2004-01-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

Energy Technology Data Exchange (ETDEWEB)

Poon, M

2004-07-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Superabundant vacancies in fcc metals: A combination of ab-initio, thermodynamic and kinetics approaches

Energy Technology Data Exchange (ETDEWEB)

Nazarov, Roman; Hickel, Tilmann; Neugebauer, Joerg [Max-Planck-Institut fuer Eisenforschung, Duesseldorf (Germany)

2011-07-01

A dramatic increase of the vacancy concentration in a H-rich atmosphere, the so called superabundant vacancy formation, has been experimentally observed in several metals and alloys. In order to study this phenomenon we systematically applied density functional theory to a large set of fcc metals. We found that a large amount of H can be trapped by a monovacancy with, e.g., up to 15 H atoms in an Al vacancy, up to 12 H atoms in the case of Pd and more than 17 H atoms for Pb. Based on the defect formation energies from DFT calculations, we have constructed a thermodynamic model that determines the equilibrium concentration of point defects as a function of temperature and H chemical potential. By applying this approach we revealed that the vacancy concentration can indeed strongly increase if H is added. To understand the phenomenon of accelerated self-diffusion in a H-rich atmosphere we coupled the information on the number of vacancies from the thermodynamic treatment with self-diffusion barriers obtained from DFT calculations. Using this approach we found that the self-diffusion coefficient is reduced not only due to the increased vacancy concentration, but also as a result of a H-induced lubricant effect.

Influence of ion implanted helium on deuterium trapping in Kh18N10T stainless steel

International Nuclear Information System (INIS)

Tolstolutskaya, G.D.; Ruzhitskij, V.V.; Kopanets, I.E.

2004-01-01

The results are presented on evolution of distribution profiles and helium and deuterium thermal desorption ion implanted in steel 18Cr10NiTi. Accumulation, trapping, retention and microstructure evolution are studied; effect helium and hydrogen simultaneous implantation on these processes is also studied

High temperature indentation of helium-implanted tungsten

Energy Technology Data Exchange (ETDEWEB)

Gibson, James S.K.-L., E-mail: james.gibson@materials.ox.ac.uk [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Roberts, Steve G. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Culham Centre for Fusion Energy, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Armstrong, David E.J. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom)

2015-02-11

Nanoindentation has been performed on tungsten, unimplanted and helium-implanted to ~600 appm, at temperatures up to 750 °C. The hardening effect of the damage was 0.90 GPa at 50 °C, but is negligible above 450 °C. The hardness value at a given temperature did not change on re-testing after heating to 750 °C. This suggests that the helium is trapped in small vacancy complexes that are stable to at least 750 °C, but which can be bypassed due to increased dislocation mobility (cross slip or climb) above 450 °C.

Formation of vacancy clusters in tungsten crystals under hydrogen-rich condition

Energy Technology Data Exchange (ETDEWEB)

Kato, Daiji, E-mail: kato.daiji@nifs.ac.jp [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Iwakiri, Hirotomo, E-mail: iwakiri@edu.u-ryukyu.ac.jp [University of the Ryukyus, Okinawa 903-0213 (Japan); Morishita, Kazunori, E-mail: morishita@iae.kyoto-u.ac.jp [Institute of Advanced Energy, Kyoto University, Kyoto 611-0011 (Japan)

2011-10-01

Di-vacancy formation assisted by hydrogen trapping is studied in terms of nucleation free-energies evaluated with density functional theory. Calculations give binding energies for single hydrogen atom as first- and second-nearest-neighbor of di-vacancies of 1.80 and 2.15 eV, respectively, which are significantly larger than that for mono-vacancies. At elevated atomic concentrations of interstitial hydrogen atoms, evaluated nucleation free-energies indicate that the hydrogen assisted di-vacancy formation becomes more favorable. It is suggested that the formation would be preceded by VH cluster formation.

Formation of vacancy clusters in tungsten crystals under hydrogen-rich condition

International Nuclear Information System (INIS)

Kato, Daiji; Iwakiri, Hirotomo; Morishita, Kazunori

2011-01-01

Di-vacancy formation assisted by hydrogen trapping is studied in terms of nucleation free-energies evaluated with density functional theory. Calculations give binding energies for single hydrogen atom as first- and second-nearest-neighbor of di-vacancies of 1.80 and 2.15 eV, respectively, which are significantly larger than that for mono-vacancies. At elevated atomic concentrations of interstitial hydrogen atoms, evaluated nucleation free-energies indicate that the hydrogen assisted di-vacancy formation becomes more favorable. It is suggested that the formation would be preceded by VH cluster formation.

Deuterium migration and trapping in uranium and uranium dioxide during D+ implantation

International Nuclear Information System (INIS)

Lewis, M.B.

1980-01-01

Uranium and UO 2 have been implanted with deuterium ions in the energy range 30-85 keV. Subsequently, the near surface regions (100-90000 Angstroem) of these samples were quantitatively profiled for deuterium oxygen using the method of ion beam microanalysis. Mean ranges and widths of the implanted ions were measured and compared with theoretical predictions. Fully oxidized samples were compared with those having only thin oxide films on their surfaces. While the deuterium appeared to migrate during its implantation in uranium, little or no migration appeared either during or after implantation in UO 2 . Further measurements suggest that thin surface oxide films strongly trap the deuterium migrating beneath the surface. It is suggested that the electronic energy loss of the ion beam lowers the effective activation energy for the formation of OD bonds near the target surface. (orig.)

Cation vacancies in ferroelectric PbTiO3 and Pb(Zr,Ti)O3 : A positron annihilation lifetime spectroscopy study

Science.gov (United States)

Keeble, D. J.; Singh, S.; Mackie, R. A.; Morozov, M.; McGuire, S.; Damjanovic, D.

2007-10-01

Positron annihilation lifetime spectroscopy measurements identify A - and B -site cation vacancies in ferroelectric perovskite oxides (ABO3) . Crystal PbTiO3 and ceramic lead zirconium titanate (PZT) were studied and gave consistent values for the lifetime resulting from positron localization at lead vacancies VPb . Positron trapping to B -site vacancies was inferred in PZT. Temperature dependent studies showed that the defect specific trapping rate was higher for VB compared to VPb , consistent with the larger negative charge. Doping PZT with Fe increased the fraction positron trapping to VB compared to VPb -type defects.

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

International Nuclear Information System (INIS)

Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

2002-01-01

It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Ion-implantation induced defects in ZnO studied by a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sekiguchi, T.; Suzuki, R.

2004-01-01

Introduction and annealing behavior of defects in Al + -implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al + -implantation. With increasing ion dose above 10 14 Al + /cm 2 the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

Zinc and group V element co-implantation in indium phosphide

International Nuclear Information System (INIS)

Yu, Kin Man; Ridgway, M.C.

2000-01-01

Group V elements with mass ranging from 35 to 122 amu have been co-implanted with Zn in InP substrates. Co-implantation with all group V elements drastically reduced Zn out-diffusion and to a certain extent also inhibited Zn in-diffusion. The reduction in out-diffusion was insensitive to the group V element mass and thus, to implantation-induced damage. We believe the group V element excess created an In-vacancy excess that enhanced Zn substitution into the In sublattice. A maximum hole concentration of 7x10 18 cm -3 was achieved with P co-implantation. Electrochemical capacitance-voltage profiling clearly showed a decrease in hole concentration as a function of increasing group V element mass. This was attributed to differences in compensating residual implantation-induced damage

Characterisation of irradiation-induced defects in ZnO single crystals

International Nuclear Information System (INIS)

Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)

Characterisation of irradiation-induced defects in ZnO single crystals

Science.gov (United States)

Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

Study of the degradation and recovery of the optical properties of H+-implanted ZnO pigments

Science.gov (United States)

Li, Chundong; Lv, Jinpeng; Yao, Shulong; Hu, Jiangang; Liang, Zhiqiang

2013-01-01

We studied the influences of proton implantation and oxygen post-annealing on the optical properties of ZnO pigments using a combination of Raman scattering, positron annihilation and photoluminescence techniques. Raman scattering results indicated that oxygen vacancies and interstitial zinc defects were produced after proton implantation. Positron annihilation spectroscopy and photoluminescence measurements demonstrated that the zinc vacancies do not contribute to the optical absorption, but give rise to the visible band emission. Interestingly, the proton implantation induced optical degradation can be annealed out at 800 °C in an O2 atmosphere. We conclude that the defect centers responsible for the optical absorption are primarily composed of VO+, ionized Zni and ionized Oi.

Study of the degradation and recovery of the optical properties of H+-implanted ZnO pigments

International Nuclear Information System (INIS)

Li, Chundong; Lv, Jinpeng; Yao, Shulong; Hu, Jiangang; Liang, Zhiqiang

2013-01-01

We studied the influences of proton implantation and oxygen post-annealing on the optical properties of ZnO pigments using a combination of Raman scattering, positron annihilation and photoluminescence techniques. Raman scattering results indicated that oxygen vacancies and interstitial zinc defects were produced after proton implantation. Positron annihilation spectroscopy and photoluminescence measurements demonstrated that the zinc vacancies do not contribute to the optical absorption, but give rise to the visible band emission. Interestingly, the proton implantation induced optical degradation can be annealed out at 800 °C in an O 2 atmosphere. We conclude that the defect centers responsible for the optical absorption are primarily composed of V O + , ionized Zn i and ionized O i

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

International Nuclear Information System (INIS)

Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

2013-01-01

The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

A trap activation model for hydrogen retention and isotope exchange in some refractory materials

International Nuclear Information System (INIS)

Brice, D.K.; Doyle, B.L.

1982-01-01

Our recently-developed Local Mixing Model (LMM) has been successful in describing and predicting the properties of hydrogen retention and isotope exchange for a variety of refractory materials. For some materials, however, the detailed predictions of the LMM are not observed. A Trap Activation Model (TAM) is proposed here to account for the observed departures from the LMM. Comparison of experimental room temperature saturation depth profiles for H + →Si with the predictions of TAM suggests that the hydrogen traps are multiple-vacancy complexes in this system. The observed profiles result from a beam-induced competition between trap creation/annihilation and H-trapping/detrapping. (orig.)

Nonlinear effects in defect production by atomic and molecular ion implantation

International Nuclear Information System (INIS)

David, C.; Dholakia, Manan; Chandra, Sharat; Nair, K. G. M.; Panigrahi, B. K.; Amirthapandian, S.; Amarendra, G.; Varghese Anto, C.; Santhana Raman, P.; Kennedy, John

2015-01-01

This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al 3 , resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al 4 implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations

Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

Energy Technology Data Exchange (ETDEWEB)

Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

2008-12-05

We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Aleksandrov, O. V.

2006-01-01

A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.

2010-04-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

2010-01-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

High-temperature equilibrium vacancy formation in ceramic materials studied by positron annihilation

International Nuclear Information System (INIS)

Forster, M.; Claudy, W.; Hermes, H.; Major, J.; Schaefer, H.E.; Koch, M.; Maier, K.; Stoll, H.

1992-01-01

Positron lifetime measurements were used in order to study thermal vacancy formation in NiO, YBa 2 Cu 3 O 7-δ , α-Al 2 O 3 , MgO and 6H-SiC at high temperatures. In NiO two increases of the positron trapping rate at 450K and 1200K (po 2 =10 5 Pa) are attributed to the change of charge of neutral extrinsic Ni-vacancies (c ≅ 10 -4 ) into a negative charge state and to the nonstochiometric formation of charged Ni-vacancies at high temperatures. In YBa 2 Cu 3 O 7-δ the oxygen loss or uptake at T > 680K with an activation enthalpy of 1.03eV can be studied by the variation of the positron lifetime with temperature and oxygen partial pressure. In α-Al 2 O 3 the positrons are annihilated from the delocalized free state between 1000K and 2250K and no positron trapping of thermally formed vacancies was detected which may be understood in terms of the theoretically predicted low concentrations of thermal vacancies. In MgO and 6H-SiC positron lifetime measurements were performed up to temperatures of about 2000K

Electronic properties of hafnium oxide: A contribution from defects and traps

Energy Technology Data Exchange (ETDEWEB)

Gritsenko, Vladimir A., E-mail: grits@isp.nsc.ru; Perevalov, Timofey V.; Islamov, Damir R., E-mail: damir@isp.nsc.ru

2016-02-15

In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies.

Ion-implantation induced defects in ZnO studied by a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z.Q.; Maekawa, M.; Kawasuso, A. [Japan Atomic Energy Research Institute, Gunma (Japan); Sekiguchi, T. [National Inst. for Materials Science, Tsukuba, Ibaraki (Japan); Suzuki, R. [National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

2004-07-01

Introduction and annealing behavior of defects in Al{sup +}-implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al{sup +}-implantation. With increasing ion dose above 10{sup 14} Al{sup +}/cm{sup 2} the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

Fe and Cu in Si: Lattice sites and trapping at implantation-related defects

International Nuclear Information System (INIS)

Wahl, U.; Correia, J.G.; Rita, E.; Araujo, J.P.; Soares, J.C.

2006-01-01

We have used the emission channeling technique in order to study the lattice sites of radioactive 59 Fe and 67 Cu following 60 keV ion implantation into Si single crystals at fluences around 10 12 -10 14 cm -2 . We find that in the room temperature as-implanted state in high-resistivity Si both Fe and Cu occupy mainly lattice sites displaced around 0.05 nm (0.5 A) from substitutional positions. Both are released from these positions during annealing at temperatures between 300 deg. C and 600 deg. C. Fe is then found mainly on near-tetrahedral interstitial sites and further annealing causes it to be increasingly incorporated on ideal substitutional sites, on which it is stable to around 800 deg. C. We have strong indications that during annealing around 600 deg. C, along with the dominance of interstitial Fe, a redistribution towards the surface takes place, suggesting that the subsequent formation of ideal substitutional Fe may be related to the trapping of Fe at R p /2, half of its implanted depth. Possible R p /2 trapping might also have taken place in our Cu experiments but appears to be less efficient since Cu tended to escape to the bulk of the samples

Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

International Nuclear Information System (INIS)

Lu, C.Y.; Sung, J.M.

1989-01-01

A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory

Science.gov (United States)

Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I.; Wang, Tahui

2017-12-01

Read operation induced disturbance in SET-state in a tungsten oxide resistive switching memory is investigated. We observe that the reduction of oxygen vacancy density during read-disturb follows power-law dependence on cumulative read-disturb time. Our study shows that the SET-state read-disturb immunity progressively degrades by orders of magnitude as SET/RESET cycle number increases. To explore the cause of the read-disturb degradation, we perform a constant voltage stress to emulate high-field stress effects in SET/RESET cycling. We find that the read-disturb failure time degradation is attributed to high-field stress-generated oxide traps. Since the stress-generated traps may substitute for some of oxygen vacancies in forming conductive percolation paths in a switching dielectric, a stressed cell has a reduced oxygen vacancy density in SET-state, which in turn results in a shorter read-disturb failure time. We develop an analytical read-disturb degradation model including both cycling induced oxide trap creation and read-disturb induced oxygen vacancy reduction. Our model can well reproduce the measured read-disturb failure time degradation in a cycled cell without using fitting parameters.

Photoconversion and dynamic hole recycling process in anion vacancies in neutron-irradiated MgO crystals

International Nuclear Information System (INIS)

Monge, M.A.; Gonzalez, R.; Munoz Santiuste, J.E.; Pareja, R.; Chen, Y.; Kotomin, E.A.; Popov, A.I.

1999-01-01

Optical spectroscopy and theory demonstrate that photon excitation of the positively charged anion vacancies (F + centers) at 5.0 eV in neutron-irradiated MgO crystals releases holes that are subsequently trapped at V-type centers, which are cation vacancies charge compensated by impurities, such as Al 3+ , F - , and OH - ions. The concentration of trapped-hole centers was found to exceed that of available anion vacancies. The disproportionately large amount of holes produced is attributed to a dynamic recycling process, by which the F + center serves to release a hole to the V-type centers and subsequently trap a hole from an Fe 3+ ion. The net effect was the increase of V-type centers mostly at the expense of Fe 3+ ions. It was also shown that concurrently there was a component which distributed holes directly from Fe 3+ to the V-type centers. copyright 1999 The American Physical Society

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Science.gov (United States)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Study of the degradation and recovery of the optical properties of H{sup +}-implanted ZnO pigments

Energy Technology Data Exchange (ETDEWEB)

Li, Chundong [Key Laboratory on Materials Behavior and Evaluation Technology in Space Environment, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Lv, Jinpeng, E-mail: hitlv@yahoo.com.cn [Key Laboratory on Materials Behavior and Evaluation Technology in Space Environment, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yao, Shulong; Hu, Jiangang; Liang, Zhiqiang [Key Laboratory on Materials Behavior and Evaluation Technology in Space Environment, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2013-01-15

We studied the influences of proton implantation and oxygen post-annealing on the optical properties of ZnO pigments using a combination of Raman scattering, positron annihilation and photoluminescence techniques. Raman scattering results indicated that oxygen vacancies and interstitial zinc defects were produced after proton implantation. Positron annihilation spectroscopy and photoluminescence measurements demonstrated that the zinc vacancies do not contribute to the optical absorption, but give rise to the visible band emission. Interestingly, the proton implantation induced optical degradation can be annealed out at 800 °C in an O{sub 2} atmosphere. We conclude that the defect centers responsible for the optical absorption are primarily composed of V{sub O}{sup +}, ionized Zn{sub i} and ionized O{sub i}.

Probing vacancy-type free-volume defects in Li2B4O7 single crystal by positron annihilation lifetime spectroscopy

Science.gov (United States)

Shpotyuk, O.; Adamiv, V.; Teslyuk, I.; Ingram, A.; Demchenko, P.

2018-01-01

Vacancy-type free-volume defects in lithium tetraborate Li2B4O7 single crystal, grown by the Czochralski technique, are probed with positron annihilation spectroscopy in the lifetime measuring mode. The experimental positron lifetime spectrum is reconstructed within the three-component fitting, involving channels of positron and positronium Ps trapping, as well as within the two-component fitting with a positronium-compensating source input. Structural configurations of the most efficient positron traps are considered using the crystallographic specificity of lithium tetraborate with the main accent on cation-type vacancies. Possible channels of positron trapping are visualized using the electronic structure calculations with density functional theory at the basis of structural parameters proper to Li2B4O7. Spatially-extended positron-trapping complexes involving singly-ionized lithium vacancies, with character lifetime close to 0.32 ns, are responsible for positron trapping in the nominally undoped lithium tetraborate Li2B4O7 crystal.

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

Determination of the vacancy formation enthalpy for high purity Ni

International Nuclear Information System (INIS)

Lynn, K.G.; Snead, C.L. Jr.; Hurst, J.J.; Farrell, K.

1979-01-01

Positron-annihilation lifetime measurements have been made on Ni over a temperature range of 4.2 to 1700 K. We find a small change in the lifetime from 4.2 to 900 K indicating a very small thermal-expansion effect. A small precursor effect is observed before the onset of significant vacancy trapping. A monovacancy formation enthalpy of 1.54/sub +0.2//sup -0.1/ eV is extracted without taking divacancies into consideration in the analysis. No detrapping from mono-vacancies is observed even at the higher temperatures. The vacancy formation enthalpy extracted from the lifetime data is compared to values obtained by Doppler-broadening and angular-correlation techniques

Determination of the vacancy formation enthalpy for high purity Ni

International Nuclear Information System (INIS)

Lynn, K.G.; Snead, C.L. Jr.; Hurst, J.J.; Farrell, K.

1979-01-01

Positron-annihilation lifetime measurements have been made on Ni over a temperature range of 4.2 to 1700 K. We find a small change in the lifetime from 4.2 - 900 K indicating a very small thermal-expansion effect. A small precursor effect is observed before the onset of significant vacancy trapping. A monovacancy formation enthalpy of 1.54sub(+0.2)sup(-0.1) eV is extracted without taking divacancies into consideration in the analysis. No detrapping from mono-vacancies is observed even at the higher temperatures. The vacancy formation enthalpy extracted from the lifetime data is compared to values obtained by Doppler-broadening and angular-correlation techniques. (author)

Laser induced fluorescence of trapped molecular ions

Energy Technology Data Exchange (ETDEWEB)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references.

Laser induced fluorescence of trapped molecular ions

International Nuclear Information System (INIS)

Grieman, F.J.

1979-10-01

An experimental apparatus for obtaining the optical spectra of molecular ions is described. The experimental technique includes the use of three dimensional ion trapping, laser induced fluorescence, and gated photon counting methods. The ions, which are produced by electron impact, are confined in a radio-frequency quadrupole ion trap of cylindrical design. Because the quadrupole ion trap allows mass selection of the molecular ion desired for study, the analysis of the spectra obtained is greatly simplified. The ion trap also confines the ions to a region easily probed by a laser beam. 18 references

A Study of the Vacancy-Impurity Interaction in Dilute Nickel Alloys by Core Electron Annihilation

Science.gov (United States)

Arbuzov, V. L.; Danilov, S. E.; Druzhkov, A. P.

1997-08-01

It is shown that the angular correlation of annihilation radiation can be used to identify vacancy-impurity complexes in dilute alloys. Annihilation of trapped positrons with core electrons bears information about the chemical environment of a vacancy defect. The method is especially effective for d-matrices doped with sp-impurities since annihilation parameters of positrons with d- and sp-shell electrons differ considerably. The potentialities of the method of core-electron annihilation of positrons are demonstrated taking electron-irradiated dilute Ni-P and Ni-Si alloys as an example. It is shown that the interaction between the vacancies, which migrate at the III stage of annealing, and P atoms in Ni-P causes a considerable change in the annihilation parameters of positrons with core electrons compared to pure Ni. In Ni-Si alloys the annihilation parameters of trapped positrons with core electrons do not differ from those in Ni. This fact is an evidence that Si atoms do not interact with vacancies in Ni.

Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

International Nuclear Information System (INIS)

Himics, L.; Tóth, S.; Veres, M.; Tóth, A.; Koós, M.

2015-01-01

Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp 2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation

Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

2011-09-12

We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

Comparative study of 150 keV Ar+ and O+ ion implantation induced structural modification on electrical conductivity in Bakelite polymer

Science.gov (United States)

Aneesh Kumar, K. V.; Krishnaveni, S.; Asokan, K.; Ranganathaiah, C.; Ravikumar, H. B.

2018-02-01

A comparative study of 150 keV argon (Ar+) and oxygen (O+) ion implantation induced microstructural modifications in Bakelite Resistive Plate Chamber (RPC) detector material at different implantation fluences have been studied using Positron Annihilation Lifetime Spectroscopy (PALS). Positron lifetime parameters viz., o-Ps lifetime (τ3) and its intensity (I3) upon lower implantation fluences can be interpreted as the cross-linking and the increased local temperature induced diffusion followed by trapping of ions in the interior polymer voids. The increased o-Ps lifetime (τ3) at higher O+ ion implantation fluences indicates chain scission owing to the oxidation and track formation. This is also justified by the X-Ray Diffraction (XRD) and Fourier Transform Infrared (FTIR) results. The modification in the microstructure and electrical conductivity of Bakelite materials are more upon implantation of O+ ions than Ar+ ions of same energy and fluences. The reduced electrical conductivity of Bakelite polymer material upon ion implantation of both the ions is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate energy and fluence of implanting ions might reduce the leakage current and hence improve the performance of Bakelite RPC detectors.

Atomic scale simulations of hydrogen implantation defects in hydrogen implanted silicon - smart Cut technology

International Nuclear Information System (INIS)

Bilteanu, L.

2010-12-01

The topic of this thesis is related to the implantation step of the SmartCut TM technology. This technology uses hydrogen in order to transfer silicon layers on insulating substrates. The transfer is performed through a fracture induced by the formation of bidimensional defects well known in literature as 'platelets'. More exactly, we have studied within this thesis work the defects appearing in the post implant state and the evolution of the implantation damage towards a state dominated by platelets. The study is organised into two parts: in the first part we present the results obtained by atomic scale simulations while in the second part we present an infrared spectroscopy study of the evolution of defects concentrations after annealing at different temperatures. The atomic scale simulations have been performed within the density functional theory and they allowed us to compute the formation energies and the migration and recombination barriers. The defects included in our study are: the atomic and diatomic interstitials, the hydrogenated vacancies and multi-vacancies and the several platelets models. The obtained energies allowed us to build a stability hierarchy for these types of defects. This scheme has been confronted with some infrared analysis on hydrogen implanted silicon samples (37 keV) in a sub-dose regime which does not allow usually the formation of platelets during the implantation step. The analysis of the infrared data allowed the detailed description of the defects concentration based on the behaviour of peaks corresponding to the respective defects during annealing. The comparison between these evolutions and the energy scheme obtained previously allowed the validation of an evolution scenario of defects towards the platelet state. (author)

Non-destructive study of the ion-implantation-affected zone (the long-range effect) in titanium nitride

International Nuclear Information System (INIS)

Perry, A.J.; Treglio, J.R.; Schaffer, J.P.; Brunner, J.; Valvoda, V.; Rafaja, D.

1994-01-01

The depth to which metal ion implantation can change the structure of titanium nitride coatings is studied using two techniques - positron annihilation spectroscopy (PAS) and glancing-angle X-ray diffraction (GA-XRD) -which are normally applied to the study of bulk materials. The PAS results indicate that the depth to which vacancies are found greatly exceeds the depth at which the implanted material resides. In addition, the concentration of vacancies continues to increase with the dose of implanted ions. The GA-XRD data show that the implantation does not change the residual stress - it remains slightly tensile. Furthermore, there is an increase in the diffraction peak broadening, which is attributed to an increase in the local strain distribution resulting from the generation of a dislocation network at depths of up to several tenths of a micrometer below the implanted zone. The data support the view of a long-range effect, where metal ion implantation causes lattice defect generation within an implantation-affected zone (IAZ) to depths well beyond the implanted zone. The defective nature of the IAZ depends on the implanted dose and the acceleration voltage, as well as on the nature of the ions implanted. In the present work, there is no residual stress in the samples, so this cannot induce the IAZ. ((orig.))

Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Zang, Hang, E-mail: zanghang@xjtu.edu.cn [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weilin, E-mail: weilin.jiang@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Liu, Wenbo [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Li, Tao; He, Chaohui; Yun, Di [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Zhiguang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2016-12-15

Highlights: • He and Kr cavities are formed in ion-implanted and 1600 °C annealed 3C-SiC. • A higher vacancy concentration leads to formation of cavities with a smaller size and higher density. • Presence of He in irradiated 3C-SiC can significantly promote cavity growth. • Small voids are formed in Kr ion penetrated 3C-SiC during thermal annealing at 1600 °C. • Local Kr migration and trapping at cavities in SiC are observed, but long-range Kr diffusion does not occur at 1600 °C. - Abstract: Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 °C with 120 keV He{sup 2+} and 4 MeV Kr{sup 15+} ions to 10{sup 17} and 4 × 10{sup 16} cm{sup −2}, respectively. The Kr{sup 15+} ions penetrated the entire depth region of the He{sup 2+} ion implantation. Three areas of He{sup 2+}, Kr{sup 15+} and He{sup 2+} + Kr{sup 15+} ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 °C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He{sup 2+} ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr{sup 15+} ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 °C.

Positron annihilation spectroscopy of vacancy aggregates in neutron-irradiated MgO crystals

International Nuclear Information System (INIS)

Pareja, R.; De La Cruz, R.M.; Gonzalez, R.; Chen, Y.; Department of Energy, Washington, DC

1992-01-01

Positron annihilation measurements in neutron-irradiated MgO crystals show that the positron lifetime is shorter than in as-grown crystals, suggesting that most of the defects produced by neutron irradiations are positively charged. The concentration of the neutral anion vacancy (possibly also the neutral anion divacancy) is estimated to be no more than ∼ 10 16 cm -3 for samples irradiated to a dose of 10 17 to 10 19 n cm -2 . Annealing experiments on the neutron-irradiated crystals show a significant increase in the positron lifetime after anneals at 900 K. The increase is attributed to positron trapping by anion-vacancy aggregates. A lifetime of (284±15)ps is tentatively assigned to positrons trapped in these aggregates. (Author)

Effect of annealing ambience on the formation of surface/bulk oxygen vacancies in TiO2 for photocatalytic hydrogen evolution

Science.gov (United States)

Hou, Lili; Zhang, Min; Guan, Zhongjie; Li, Qiuye; Yang, Jianjun

2018-01-01

The surface and bulk oxygen vacancy have a prominent effect on the photocatalytic performance of TiO2. In this study, TiO2 possessing different types and concentration of oxygen vacancies were prepared by annealing nanotube titanic acid (NTA) at various temperatures in air or vacuum atmosphere. TiO2 with the unitary bulk single-electron-trapped oxygen vacancies (SETOVs) formed when NTA were calcined in air. Whereas, TiO2 with both bulk and surface oxygen vacancies were obtained when NTA were annealed in vacuum. The series of TiO2 with different oxygen vacancies were systematically characterized by TEM, XRD, PL, XPS, ESR, and TGA. The PL and ESR analysis verified that surface oxygen vacancies and more bulk oxygen vacancies could form in vacuum atmosphere. Surface oxygen vacancies can trap electron and hinder the recombination of photo-generated charges, while bulk SETOVs act as the recombination center. The surface or bulk oxygen vacancies attributed different roles on the photo-absorbance and activity, leading that the sample of NTA-A400 displayed higher hydrogen evolution rate under UV light, whereas NTA-V400 displayed higher hydrogen evolution rate under visible light because bulk SETOVs can improve visible light absorption because sub-band formed by bulk SETOVs prompted the secondary transition of electron excited.

Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application

Science.gov (United States)

Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming

2018-02-01

Pt/SiO2:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R off/R on ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO2 film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles. The implantation induced nanoparticles act as trap sites in the resistive switching layer and play critical roles in the multilevel storage, which is evidenced by the negative differential resistance effect in the current-voltage (I-V) measurements.

Vibrational and electronic spectroscopy of ion-implantation-induced defects in fused silica and crystalline quartz

International Nuclear Information System (INIS)

Arnold, G.W.

1978-01-01

Defects produced by implantation of various atomic species in fused and crystalline SiO 2 were studied using infrared reflection spectroscopy (IRS) with UV-visible spectroscopy. We observe a new vibrational band at 830 cm -1 which is tentatively associated with the creation of two nonbridging O atoms in SiO 4 units. Numerous chemical effects were also observed, including evidence for chemical incorporation of Li and anomalously large O-vacancy production for Al + , B + and Si + implantation

Ballistic self-annealing during ion implantation

International Nuclear Information System (INIS)

Prins, Johan F.

2001-01-01

Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

Indium vacancy induced d0 ferromagnetism in Li-doped In2O3 nanoparticles

Science.gov (United States)

Cao, Haiming; Xing, Pengfei; Zhou, Wei; Yao, Dongsheng; Wu, Ping

2018-04-01

Li-doped In2O3 nanoparticles with room temperature d0 ferromagnetism were prepared by a sol-gel method. X-ray diffraction, X-ray photoelectron spectroscopy and photoluminescence were carried out to investigate the effects of Li incorporation on the lattice defects. As the content of Li increases, non-monotonic changes in shifts of XRD peak (2 2 2) and the intensity ratios of indium vacancies related photoluminescence peak (PII) with respect to oxygen vacancies related peak (PI) are observed. Results show that at low doping level (≤2 at.%) Li prefers to occupy In sites, while with further doping the interstitial sites are more favorable for Li. Combined with the consistent non-monotonic change in saturation magnetization, we think that indium vacancies resulting from Li-doping play an important role in inducing d0 ferromagnetism in our Li-doped In2O3 nanoparticles, and the FM coupling is mainly mediated by the LiIn-ONN-VIn-ONN-LiIn chains.

Theoretical study on magnetism induced by H vacancy in isolated Alq3 and Gaq3 molecules

Science.gov (United States)

Ju, Lin; Xu, Tongshuai; Zhang, Yongjia; Sun, Li

2017-10-01

The magnetism induced by H vacancy in isolated Alq3 and Gaq3 molecules has been studied based on density functional theory. The isolated stoichiometric Alq3 and Gaq3 molecules are non-magnetic. With an H vacancy, both Alq3 and Gaq3 molecules could show magnetism, which are mainly due to the polarization of the C 2p electrons and the magnetic moments are mainly distributed at most nearby C atoms of H vacancies. This is because the unpaired electron on the C atom appears, when the H atom nearby is removed. Six cases of the H vacancy introduced in the Alq3 and Gaq3 molecules are considered, respectively. By comparing the relative defect formation energy, the V H3 vacancy is most likely to appear in the two kinds of molecules. In addition, for the ground state configuration of isolated Alq3 and Gaq3 molecules with two H vacancies, the energy of the ferromagnetic state is lower than that of the antiferromagnetic state, which means that the ferromagnetic state is stable. The ferromagnetic mechanism can be explained by the Heisenberg direct exchange interaction between two the polarized C atoms. Our work opens a new way to synthesize organic magnetic materials and perfects the theory of organic ferromagnetism by introducing the d 0 ferromagnetism.

Strong trapping and slow diffusion of helium in a tungsten grain boundary

Energy Technology Data Exchange (ETDEWEB)

Wang, Xin-Xin [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Niu, Liang-Liang, E-mail: nliangli@umich.edu [Department of Physics, Beihang University, Beijing 100191 (China); Department of Nuclear Engineering and Radiological Science, University of Michigan, Ann Arbor, MI 48109 (United States); Wang, Shaoqing [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2017-04-15

We have investigated the segregation, trapping and diffusion of He in a ∑3<110>{111} W grain boundary (GB) using combined techniques of ab initio and classical atomistic simulations. We show that, with an average segregation energy of −3.20 eV, the strong He trapping can be attributed to a GB interstitial trapping or a vacancy trapping mechanism, while an average energy barrier of 1.97 eV leads to a slow diffusion of He in the GB plane. We further reveal by molecular dynamics simulations that the He diffusion will be dictated by GB migration through the motion of GB disconnections. Interestingly, we also observe a He-induced GB structural transition in classical simulations. The present work suggests that the GB does not provide fast transport channel for He, providing useful reference for the possible application of polycrystalline W under He irradiation in advanced nuclear fusion reactors.

A detailed physical model for ion implant induced damage in silicon

International Nuclear Information System (INIS)

Tian, S.; Morris, M.F.; Morris, S.J.; Obradovic, B.; Wang, G.; Tasch, A.F.

1998-01-01

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF 2 , and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion implantation simulator, and has been developed primarily for use in engineering workstations. This damage model is the most physical model in the literature to date within the framework of the binary collision approximation (BCA), and provides the required, accurate as-implanted impurity profiles and damage profiles for transient enhanced diffusion (TED) simulation

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Science.gov (United States)

Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Shimizu, Mitsuaki; Takahashi, Tokio; Ishibashi, Shoji; Uedono, Akira; Chichibu, Shigefusa F.

2017-06-01

The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared. The intensities and lifetimes of the near-band-edge and ultraviolet luminescences associated with a MgGa acceptor of I/I GaN:Mg were significantly lower and shorter than those of the epilayers, respectively. Simultaneously, the green luminescence (GL) became dominant. These emissions were quenched far below room temperature. The results indicate the generation of point defects common to GL and nonradiative recombination centers (NRCs) by I/I. Taking the results of positron annihilation measurement into account, N vacancies are the prime candidate to emit GL and create NRCs with Ga vacancies, (VGa) m (VN) n , as well as to inhibit p-type conductivity.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

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D. J. Winarski

2016-09-01

Full Text Available Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM, optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (∼10−2 Ω.cm in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal–oxide–semiconductor (CMOS devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Science.gov (United States)

Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

2016-09-01

Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Properties of arsenic–implanted Hg1-xCdxTe MBE films

Directory of Open Access Journals (Sweden)

Izhnin Igor I.

2017-01-01

Full Text Available Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30 grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV. 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.

Temperature dependence of positron trapping by vacancies, loops and voids in molybdenum

International Nuclear Information System (INIS)

Bentzon, M.D.; Linderoth, S.; Petersen, K.

1985-01-01

The temperature dependence of positron trapping by defects in molybdenum has been studied. By resolving positron lifetime spectra into three components, it has been possible to distinguish the temperature dependence of positron trapping into loops and voids. The results show that the positron trapping rate into voids depends linearly on temperature. The temperature dependence of positron trapping by loops can be interpreted as positrons being trapped by jogs, directly or via the dislocation line. The temperature dependence of positrons trapped by loops is argued mainly to be due to the trapping at the dislocation line, and not to detrapping. The observed temperature dependence of positron annihilation parameters in an electron irradiated sample (below stage III), is explained by competitive positron trapping in interstitial loops at low temperatures

Phosphorous vacancy nearest neighbor hopping induced instabilities in InP capacitors II. Computer simulation

International Nuclear Information System (INIS)

Juang, M.T.; Wager, J.F.; Van Vechten, J.A.

1988-01-01

Drain current drift in InP metal insulator semiconductor devices display distinct activation energies and pre-exponential factors. The authors have given evidence that these result from two physical mechanisms: thermionic tunneling of electrons into native oxide traps and phosphorous vacancy nearest neighbor hopping (PVNNH). They here present a computer simulation of the effect of the PVNHH mechanism on flatband voltage shift vs. bias stress time measurements. The simulation is based on an analysis of the kinetics of the PVNNH defect reaction sequence in which the electron concentration in the channel is related to the applied bias by a solution of the Poisson equation. The simulation demonstrates quantitatively that the temperature dependence of the flatband shift is associated with PVNNH for temperatures above room temperature

Oxygen vacancy induced by La and Fe into ZnO nanoparticles to modify ferromagnetic ordering

International Nuclear Information System (INIS)

Verma, Kuldeep Chand; Kotnala, R.K.

2016-01-01

We reported long-range ferromagnetic interactions in La doped Zn 0.95 Fe 0.05 O nanoparticles that mediated through lattice defects or vacancies. Zn 0.92 Fe 0.05 La 0.03 O (ZFLaO53) nanoparticles were synthesized by a sol–gel process. X-ray fluorescence spectrum of ZFLaO53 detects the weight percentage of Zn, Fe, La and O. X-ray diffraction shows the hexagonal Wurtzite ZnO phase. The Rietveld refinement has been used to calculate the lattice parameters and the position of Zn, Fe, La and O atoms in the Wurtzite unit cell. The average size of ZFLaO53 nanoparticles is 99 nm. The agglomeration type product due to OH ions with La results into ZnO nanoparticles than nanorods that found in pure ZnO and Zn 0.95 Fe 0.05 O sample. The effect of doping concentration to induce Wurtzite ZnO structure and lattice defects has been analyzed by Raman active vibrational modes. Photoluminescence spectra show an abnormal emission in both UV and visible region, and a blue shift at near band edge is formed with doping. The room temperature magnetic measurement result into weak ferromagnetism but pure ZnO is diamagnetic. However, the temperature dependent magnetic measurement using zero-field and field cooling at dc magnetizing field 500 Oe induces long-range ferromagnetic ordering. It results into antiferromagnetic Neel temperature of ZFLaO53 at around 42 K. The magnetic hysteresis is also measured at 200, 100, 50 and 10 K measurement that indicate enhancement in ferromagnetism at low temperature. Overall, the La doping into Zn 0.95 Fe 0.05 O results into enhanced antiferromagnetic interaction as well as lattice defects/vacancies. The role of the oxygen vacancy as the dominant defects in doped ZnO must form Bound magnetic polarons has been described. - Graphical abstract: The long-range ferromagnetic order in Zn 0.92 Fe 0.05 La 0.03 O nanoparticles at low temperature measurements involves oxygen vacancy as the medium of magnetic interactions. - Highlights: • The La and Fe doping

Creation of nitrogen-vacancy centres in diamond with high resolution

Energy Technology Data Exchange (ETDEWEB)

Pezzagna, Sebastien; Meijer, Jan [Rubion, Ruhr-Universitaet Bochum (Germany); Wildanger, Dominik; Hell, Stefan W. [Department of NanoBiophotonics, Max Planck Institute for Biophysical Chemistry, Goettingen (Germany); Mazarov, Paul; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany); Naydenov, Boris; Jelezko, Fedor; Wrachtrup, Joerg [3. Institute of Physics, University of Stuttgart (Germany)

2010-07-01

Nowadays, diamond and the nitrogen-vacancy (NV) colour centres constitute the best solid-state system in view of quantum-computing applications. It has also been shown recently that single NV centres could be used as nanoscale magnetic sensors. Such applications require the creation of single NV centres with very high resolution and with a high efficiency. The nano-implanter at the university of Bochum provides low energy nitrogen ions which can be implanted through a hole pierced in the tip of an atomic force microscope. Ultrapure diamond samples have been implanted with spot sizes of 50nm and less. Stimulated Emission Depletion (STED) microscopy has been used to characterise and resolve the implanted spots.

Annealing of radiation-induced defects in vanadium and vanadium-titanium alloys

International Nuclear Information System (INIS)

Leguey, T.

1996-01-01

The annealing of defects induced by electron irradiation up to a dose of 6.10 21 m -2 at T<293 K has been investigated in single-crystals of pure vanadium and in vanadium-titanium alloys with compositions 0.3, 1 and 5 at.% Ti using positron annihilation spectroscopy. The recovery of the positron annihilation parameters in V single-crystals indicates that the defect annealing takes place in the temperature range 410-470 K without formation of microvoids for the present irradiation conditions. For the alloys the recovery onset is shifted to 460 K, the width of the annealing stage is gradually broadened with increasing Ti content, and microvoids are formed for annealing temperatures at the end of the recovery stage. The results show that the vacancy release from vacancy-interstitial impurity pairs and subsequent recombination with interstitial loops is the mechanism of the recovery in pure V. For V-Ti alloys, vacancy-Ti-interstitial impurity complexes and vacancy-Ti pairs appear to be the defects responsible for the positron trapping. The broadening of the recovery stage with increasing Ti content indicates that solute Ti is a very effective trap for vacancies in V. (orig.)

Radiation induced traps of zinc phosphate and phosphide

International Nuclear Information System (INIS)

Murali, K.R.; Rao, D.R.

1980-01-01

Thermoluminescence (TL) glow curve (TGC) method has been used to study the traps produced by X-irradiation in Zn 3 (PO 4 ) 2 and Zn 3 P 2 . Prominent TL glow peaks were observed at 100 0 and 360 0 C for zinc phosphate while for zinc phosphide only one glow peak at 245 0 C was observed, and in the latter case the TL output was in general quite low compared to zinc phosphate. The TL spectra for both the glow peaks of zinc phosphate indicated emission band in the region around 560 nm, while for zinc phosphide the emission occurred at 575 nm (in the temperature region 200-270 0 C). The low temperature glow peaks below 270 0 C were less stable compared to those above 300 0 C and were completely destroyed when the irradiated samples were stored in darkness for 24 hr at room temperature. Shining by 470 nm light however produced preferential bleaching of the two TL peaks at 100 and 360 0 C with no effect on the 245 0 C glow peak of zinc phosphide. It is concluded that during heat treatment large numbers of Zn-vacancies are formed due to which complexes like Zn-P are produced by irradiation and the TL traps destroyed in a radiative recombination process are related with these complexes. (author)

Dissolving, trapping and detrapping mechanisms of hydrogen in bcc and fcc transition metals

Directory of Open Access Journals (Sweden)

Yu-Wei You

2013-01-01

Full Text Available First-principles calculations are performed to investigate the dissolving, trapping and detrapping of H in six bcc (V, Nb, Ta, Cr, Mo, W and six fcc (Ni, Pd, Pt, Cu, Ag, Au metals. We find that the zero-point vibrations do not change the site-preference order of H at interstitial sites in these metals except Pt. One vacancy could trap a maximum of 4 H atoms in Au and Pt, 6 H atoms in V, Nb, Ta, Cr, Ni, Pd, Cu and Ag, and 12 H atoms in Mo and W. The zero-point vibrations never change the maximum number of H atoms trapped in a single vacancy in these metals. By calculating the formation energy of vacancy-H (Vac-Hn complex, the superabundant vacancy in V, Nb, Ta, Pd and Ni is demonstrated to be much more easily formed than in the other metals, which has been found in many metals including Pd, Ni and Nb experimentally. Besides, we find that it is most energetically favorable to form Vac-H1 complex in Pt, Cu, Ag and Au, Vac-H4 in Cr, Mo and W, and Vac-H6 in V, Nb, Ta, Pd and Ni. At last, we examine the detrapping behaviors of H atoms in a single vacancy and find that with the heating rate of 10 K/min a vacancy could accommodate 4, 5 and 6 H atoms in Cr, Mo and W at room temperature, respectively. The detrapping temperatures of all H atoms in a single vacancy in V, Nb, Ta, Ni, Pd, Cu and Ag are below room temperature.

Electrical and optical properties of Cr and Fe implanted n-GaN

International Nuclear Information System (INIS)

Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Pashkova, N.V.; Shlensky, A.A.; Pearton, S.J.; Overberg, M.E.; Abernathy, C.R.; Zavada, J.M.; Wilson, R.G.

2003-01-01

Deep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are compared with previous measurements on Mn and Co implanted GaN. It is shown that the acceptor levels of substitutional Mn, Co, Fe, and Cr in n-GaN are located, respectively, near E v +1.6 eV, E v +1.7 eV, E v +1.8 eV, and E v +2 eV, the trend being similar to that observed in GaAs, GaP, and InP. The Fermi level in the implanted region is pinned near deep electron traps at E c -0.5 eV that are tentatively attributed to complexes between substitutional transition metal ions and native defects such as nitrogen vacancies. It is shown that for all implanted species after 700 deg. C annealing a damaged region with relatively high resistivity is formed down to the depth of about 1 μm much, exceeding the projected range of implanted ions. This region is enriched with radiation-damage-related defects and is most likely formed by outdiffusion of these defects from the implanted region during annealing. The thickness of this damaged region is shown to be the lowest for Cr implantation

Mn fraction substitutional site and defects induced magnetism in Mn-implanted 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Bouziane, K., E-mail: Khalid.bouziane@uir.ac.ma [Pôle Energies Renouvelables et Etudes Pétrolières, Université Internationale de Rabat, 11000 – Salé el Jadida, Technopolis (Morocco); Al Azri, M.; Elzain, M. [Department of Physics, College of Science, Sultan Qaboos University, P.O. Box 36, Al-Khodh 123 (Oman); Chérif, S.M. [LSPM (CNRS-UPR 3407), Université Paris, 13-Nord, 99, Avenue Jean Baptiste Clément, 93430 Villetaneuse (France); Mamor, M. [Equipe MSISM, Faculté Poly-Disciplinaire, B.P. 4162 Safi, Université Cadi Ayyad, Marrakech (Morocco); Declémy, A. [Institut P’, CNRS – Université de Poitiers – ENSMA, UPR 3346, SP2MI – Téléport 2, 11 boulevard Marie et Pierre Curie, BP 30179, F-86962 Futuroscope Chasseneuil Cedex (France); Thomé, L. [CSNSM-Orsay, Bât. 108, Université d’Orsay, F-91405 Orsay (France)

2015-05-25

Highlights: • Shallow Mn-implanted 6H-SiC crystal. • Correlation between Mn-substitutional site concentration and magnetism. • Correlation between defects nature surrounding Mn site and magnetism. • Correlation of magnetism in Mn-doped SiC to Mn at Si sites and vacancy-related defect. - Abstract: n-type 6H-SiC (0 0 0 1) single crystal substrates were implanted with three fluences of manganese (Mn{sup +}) ions: 5 × 10{sup 15}, 1 × 10{sup 16} and 5 × 10{sup 16} cm{sup −2} with implantation energy of 80 keV at 365 °C to stimulate dynamic annealing. The samples were characterized using Rutherford backscattering channeling spectroscopy (RBS/C), high-resolution X-ray diffraction technique (HRXRD), and Superconducting Quantum Interference Device (SQUID) techniques. Two main defect regions have been identified using RBS/C spectra fitted with the McChasy code combined to SRIM simulations. Intermediate defects depth region is associated with vacancies (D{sub V}) and deeper defect (D{sub N}) essentially related to the Si and C interstitial defects. The defect concentration and the maximum perpendicular strain exhibit similar increasing trend with the Mn{sup +} fluence. Furthermore, the amount of Mn atoms at Si substitutional sites and the corresponding magnetic moment per Mn atom were found to increase with increasing Mn fluence from 0.7 μ{sub B} to 1.7 μ{sub B} and then collapsing to 0.2 μ{sub B}. Moreover, a strong correlation has been found between the magnetic moment and the combination of both large D{sub V}/D{sub N} ratio and high Mn at Si sites. These results are corroborated by our ab initio calculations considering the most stable configurations showing that besides the amount of Mn substituting Si sites, local vacancy-rich environment is playing a crucial role in enhancing the magnetism.

Charge Dynamics in near-Surface, Variable-Density Ensembles of Nitrogen-Vacancy Centers in Diamond.

Science.gov (United States)

Dhomkar, Siddharth; Jayakumar, Harishankar; Zangara, Pablo R; Meriles, Carlos A

2018-06-13

Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multicolor confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the ionization and recombination rates of shallow NVs compared to those in bulk diamond. Further, we find that these rates grow linearly, not quadratically, with laser intensity, indicative of single-photon processes enabled by NV state mixing with other defect states. Accompanying these findings, we observe NV ionization and recombination in the dark, likely the result of charge transfer to neighboring traps. Despite the altered charge dynamics, we show that one can imprint rewritable, long-lasting patterns of charged-initialized, near-surface NVs over large areas, an ability that could be exploited for electrochemical biosensing or to optically store digital data sets with subdiffraction resolution.

Hydrogen embrittlement of austenitic stainless steels revealed by deformation microstructures and strain-induced creation of vacancies

International Nuclear Information System (INIS)

Hatano, M.; Fujinami, M.; Arai, K.; Fujii, H.; Nagumo, M.

2014-01-01

Hydrogen embrittlement of austenitic stainless steels has been examined with respect to deformation microstructures and lattice defects created during plastic deformation. Two types of austenitic stainless steels, SUS 304 and SUS 316L, uniformly hydrogen-precharged to 30 mass ppm in a high-pressure hydrogen environment, are subjected to tensile straining at room temperature. A substantial reduction of tensile ductility appears in hydrogen-charged SUS 304 and the onset of fracture is likely due to plastic instability. Fractographic features show involvement of plasticity throughout the crack path, implying the degradation of the austenitic phase. Electron backscatter diffraction analyses revealed prominent strain localization enhanced by hydrogen in SUS 304. Deformation microstructures of hydrogen-charged SUS 304 were characterized by the formation of high densities of fine stacking faults and ε-martensite, while tangled dislocations prevailed in SUS 316L. Positron lifetime measurements have revealed for the first time hydrogen-enhanced creation of strain-induced vacancies rather than dislocations in the austenitic phase and more clustering of vacancies in SUS 304 than in SUS 316L. Embrittlement and its mechanism are ascribed to the decrease in stacking fault energies resulting in strain localization and hydrogen-enhanced creation of strain-induced vacancies, leading to premature fracture in a similar way to that proposed for ferritic steels

Positron annihilation studies of vacancies in Ag-Zn alloys

International Nuclear Information System (INIS)

Chabik, S.

1982-01-01

The temperature dependence of annihilation rate, F(T), at the peak of angular correlation curve has been measured for Ag-29.2%at Zn and Ag-50%at Zn alloys. By applying the trapping model the vacancy formation energy for Ag-29.2%at Zn alloy has been found to be equal to 0.94+-0.06 eV. It has been found that the course of the F(T) curve for Ag-50%at Zn depends on the phase composition and thermal history of the investigated sample. For alloys containing not more than 50%at Zn, the concentration dependence of the vacancy formation energy for Ag-Zn alloys is very similar to that for Cu-Zn alloys. (Auth.)

Trapping of oxygen vacancies on twin walls of CaTiO3: a computer simulation study

International Nuclear Information System (INIS)

Calleja, Mark; Dove, Martin T; Salje, Ekhard K H

2003-01-01

We have studied the atomic structure of [001] 90 deg. rotation twin walls in orthorhombic CaTiO 3 (symmetry Pbnm) at low temperature (10 K) and their effects on oxygen vacancies. The wall thickness was found to be 2.3 nm at T || T c and it was found that it is energetically favourable for such vacancies to reside in the wall, particularly when bridging titania ions in the (001) plane. The binding energy of an oxygen vacancy in the wall with respect to the bulk is calculated to be ≤ 1.2 eV

Role of oxygen vacancies in anodic TiO2 thin films

International Nuclear Information System (INIS)

Tit, N.; Halley, J.W.

1992-05-01

Defects play an important role in the electronic and optical properties of amorphous solids in general. Here we present both experimental and theoretical investigations on the nature and origin of defect states in anodic rutile TiO 2 thin films (of thickness 5nm to 20nm). There is experimental evidence that the observed gap state at 0.7eV below the edge of conduction-band is due to an oxygen vacancy. For this reason, oxygen vacancies are used in our model. A comparison of the calculated bulk-photoconductivity to photospectroscopy experiment reveals that the films have bulk-like transport properties. On the other hand a fit of the surface density of states to the scanning tunneling microscopy (STM) on the (001) surfaces has suggested a surface defect density of 5% of oxygen vacancies. To resolve this discrepancy, we calculated the dc-conductivity where localization effects are included. Our results show an impurity band formation at about p c =9% of oxygen vacancies. We concluded that the gap states seen in STM are localized and the oxygen vacancies are playing the role of trapping centers (deep levels) in the studied films. (author). 15 refs, 5 figs

Optical studies of cobalt implanted rutile TiO2 (110) surfaces

International Nuclear Information System (INIS)

Joshi, Shalik Ram; Padmanabhan, B.; Chanda, Anupama; Mishra, Indrani; Malik, V.K.; Mishra, N.C.; Kanjilal, D.; Varma, Shikha

2016-01-01

Highlights: • The present study displays formation of nanostructures after Co implantation on TiO 2 surfaces. • Preferential sputtering leads to the creation of oxygen vacancies on the surface. • A large enhancement in visible light absorbance (nearly 5 times compared to pristine) is observed. • Creation of self-organized nanostructures and Ti 3+ oxygen vacancies promote photoabsorption. • Formation of Co-nanoclusters and Co–Ti–O phase play concerted role in enhancing photo-absorption. - Abstract: Present study investigates the photoabsorption properties of single crystal rutile TiO 2 (110) surfaces after they have been implanted with low fluences of cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti 3+ states), development of cobalt nano-clusters as well as band gap modifications have also been observed. Results presented here demonstrate that fabrication of self organized nanostructures, upon implantation, along with the development of oxygen vacancies and ligand field transitions of cobalt ion promote the enhancement of photo-absorbance in both UV (∼2 times) and visible (∼5 times) regimes. These investigations on nanostructured TiO 2 surfaces can be important for photo-catalysis.

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Shen, Xiao, E-mail: xiao.shen@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2015-04-06

MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Energy Technology Data Exchange (ETDEWEB)

Das, Saikat [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Wang, Bo [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Cao, Ye [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for; Rae Cho, Myung [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Jae Shin, Yeong [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Mo Yang, Sang [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Sookmyung Women' s Univ., Seoul (Republic of Korea). Dept. of Physics; Wang, Lingfei [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kim, Minu [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy; Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials; Chen, Long-Qing [Pennsylvania State Univ., University Park, PA (United States).Dept. of Materials Science and Engineering; Noh, Tae Won [Inst. for Basic Science (IBS), Seoul (Republic of Korea). Center for Correlated Electron Systems; Seoul National University (SNU), Seoul (Republic of Korea). Dept. of Physics and Astronomy

2017-09-20

Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implications for device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. Finally, the ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena and engineering multifunctional oxide devices.

On the empirical determination of positron trapping coefficient at nano-scale helium bubbles in steels irradiated in spallation target

Science.gov (United States)

Krsjak, Vladimir; Kuriplach, Jan; Vieh, Christiane; Peng, Lei; Dai, Yong

2018-06-01

In the present work, the specific positron trapping rate of small helium bubbles was empirically derived from positron annihilation lifetime spectroscopy (PALS) and transmission electron microscopy (TEM) studies of Fe9Cr martensitic steels. Both techniques are well known to be sensitive to nanometer-sized helium-filled cavities induced during irradiation in a mixed proton-neutron spectrum of spallation target. Complementary TEM and PALS studies show that positrons are being trapped to these defects at a rate of 1.2 ± 0.8 × 10-14 m3s-1. This suggests that helium bubbles in ferritic/martensitic steels are attractive traps for positrons comparable to mono-vacancies and quantitative analysis of the bubbles by PALS technique is plausible.

Strain engineering of magnetic state in vacancy-doped phosphorene

Energy Technology Data Exchange (ETDEWEB)

Ren, Jie [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhang, Chunxiao, E-mail: zhangchunxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Li, Jin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Guo, Zhixin [Department of Physics, Xiangtan University, Xiangtan 411105, Hunan (China); Xiao, Huaping, E-mail: hpxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhong, Jianxin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China)

2016-09-23

Inducing and manipulating the magnetism in two-dimensional materials play an important role for the development of the next-generation spintronics. In this letter, the effects of the biaxial strain on magnetic properties of vacancy-doped phosphorene are investigated using first-principles calculation. We find although only SV956 doping induces magnetism for unstrained phosphorene, the biaxial strain induces nonzero magnetic moment for SV5566 and DVa doped phosphorene. The biaxial strain also modulates the magnetic state for SV956, SV5566 and DVa doped phosphorene. The local magnetic moment derives from the spin polarization of the dangling bonds near the vacancy. The biaxial strain influences the local bonding configuration near the vacancy which determines the presence of dangling bonds, and then modulates the magnetic state. Our findings promise the synergistic effect of strain engineering and vacancy decoration is an effective method for the operation of phosphorene-based spintronic devices. - Highlights: • Investigation of the magnetic moment of vacancy-doped phosphorene by DFT calculation. • The modulation of the magnetic moment by the biaxial strain. • The analysis of the bonding configuration with the biaxial strain. • The analysis of the electronic structures to explain the evolution of the magnetic moment. • The effects of the biaxial strain on the band gap and doping levels.

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

International Nuclear Information System (INIS)

Olivero, P; Bosia, F; Fairchild, B A; Gibson, B C; Greentree, A D; Spizzirri, P; Prawer, S

2013-01-01

We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols. (paper)

Characterization of vacancy defects in Cu(In,GaSe2 by positron annihilation spectroscopy

Directory of Open Access Journals (Sweden)

M. R. M. Elsharkawy

2016-12-01

Full Text Available The photovoltaic performance of Cu(In1-x,GaxSe2 (CIGS materials is commonly assumed to be degraded by the presence of vacancy-related defects. However, experimental identification of specific vacancy defects remains challenging. In this work we report positron lifetime measurements on CIGS crystals with x = 0, and x = 0.05, saturation trapping to two dominant vacancy defect types, in both types of crystal, is observed and found to be independent of temperature between 15–300 K. Atomic superposition method calculations of the positron lifetimes for a range of vacancy defects in CIS and CGS are reported. The calculated lifetimes support the assignment of the first experimental lifetime component to monovacancy or divacancy defects, and the second to trivacancies, or possibly the large In-Se divacancy. Further, the calculated positron parameters obtained here provide evidence that positron annihilation spectroscopy has the capability to identify specific vacancy-related defects in the Cu(In1-x,GaxSe2 chalcogenides.

Identification of electron and hole traps in KH2PO4 crystals

International Nuclear Information System (INIS)

Garces, N. Y.; Stevens, K. T.; Halliburton, L. E.; Demos, S. G.; Radousky, H. B.; Zaitseva, N. P.

2001-01-01

Electron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH 2 PO 4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a 266 nm beam from a pulsed Nd:YAG laser) and are stable for days and even weeks at room temperature. One center consists of a hole trapped on an oxygen ion adjacent to a silicon impurity located on a phosphorus site. This defect has a small, but easily observed, hyperfine interaction with the adjacent substitutional proton. The other centers are formed when an electron is trapped at an oxygen vacancy. These latter defects are best described as (PO 3 ) 2- molecular ions, where the primary phosphorus nucleus is responsible for a large hyperfine splitting (500--800 G in magnitude). Five EPR spectra representing variations of these oxygen vacancy centers are observed, with the differences being attributed to the relative position of a nearby cation vacancy, either a missing proton or potassium. An angular study of the EPR spectra, conducted at room temperature, provided principal values and principal directions for the g matrices and hyperfine matrices for the hole center and two of the electron centers

Acceptor Type Vacancy Complexes In As-Grown ZnO

International Nuclear Information System (INIS)

Zubiaga, A.; Tuomisto, F.; Zuniga-Perez, J.

2010-01-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li Zn and Na Zn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Acceptor Type Vacancy Complexes In As-Grown ZnO

Science.gov (United States)

Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

2010-11-01

One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

Evolution of voids in Al+-implanted ZnO probed by a slow positron beam

International Nuclear Information System (INIS)

Chen, Z.Q.; Maekawa, M.; Yamamoto, S.; Kawasuso, A.; Yuan, X.L.; Sekiguchi, T.; Suzuki, R.; Ohdaira, T.

2004-01-01

Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 10 15 Al + /cm 2 . Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V 8 , are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter increases in the temperature range from 200 deg. C to 600 deg. C suggesting further agglomeration of vacancy clusters to voids. Detailed analyses of Doppler broadening spectra show formation of positronium after 600 deg. C annealing of the implanted samples with doses higher than 10 14 Al + /cm 2 . Positron lifetime measurements further suggest that the void diameter is about 0.8 nm. The voids disappear and the vacancy concentration reaches the detection limit after annealing at 600-900 deg. C. Hall measurement shows that the implanted Al + ions are fully activated with improved carrier mobility after final annealing. Cathodoluminescence measurements show that the ultraviolet luminescence is much stronger than the unimplanted state. These findings also suggest that the electrical and optical properties of ZnO become much better by Al + implantation and subsequent annealing

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Determining the internal quantum efficiency of shallow-implanted nitrogen-vacancy defects in bulk diamond

DEFF Research Database (Denmark)

Radko, Ilya; Boll, Mads; Israelsen, Niels Møller

2016-01-01

-implanted NV defects in a single-crystal bulk diamond. Using a spherical metallic mirror with a large radius of curvature compared to the optical spot size, we perform calibrated modifications of the local density of states around NV defects and observe the change of their total decay rate, which is further...... used for IQE quantification. We also show that at the excitation wavelength of 532 nm, photo-induced relaxation cannot be neglected even at moderate excitation powers well below the saturation level. For NV defects shallow implanted 4.5 ± 1 and 8 ± 2 nm below the diamond surface, we determine...

Simulation of the Atomic and Electronic Structure of Oxygen Vacancies and Polyvacancies in ZrO2

Science.gov (United States)

Perevalov, T. V.

2018-03-01

Cubic, tetragonal, and monoclinic phases of zirconium oxide with oxygen vacancies and polyvacancies are studied by quantum chemical modeling of the atomic and electronic structure. It is demonstrated that an oxygen vacancy in ZrO2 may act as both an electron trap and a hole one. An electron added to the ZrO2 structure with an oxygen vacancy is distributed between two neighboring Zr atoms and is a bonding orbital by nature. It is advantageous for each subsequent O vacancy to form close to the already existing ones; notably, one Zr atom has no more than two removed O atoms related to it. Defect levels from oxygen polyvacancies are distributed in the bandgap with preferential localization in the vicinity of the oxygen monovacancy level.

Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

Science.gov (United States)

Ayedh, H. M.; Hallén, A.; Svensson, B. G.

2015-11-01

The carbon vacancy (VC) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the VC-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (Ci's) and annihilation of VC's in the epi-layer "bulk". Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the VC annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating VC's. Concentrations of VC below ˜2 × 1011 cm-3 can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the VC-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote Ci-clustering and reduce dynamic defect annealing. These Ci-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced Ci injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the VC-concentration, which limit the net effect of the Ci injection, and a competition between the two processes occurs.

First-principles study on the interaction of nitrogen atom with α–uranium: From surface adsorption to bulk diffusion

International Nuclear Information System (INIS)

Su, Qiulei; Deng, Huiqiu; Xiao, Shifang; Li, Xiaofan; Hu, Wangyu; Ao, Bingyun; Chen, Piheng

2014-01-01

Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of α–uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk α–uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces

Vacancy induced half-metallicity in half-Heusler semiconductors

KAUST Repository

Zhu, Zhiyong

2011-09-28

First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials is broken for all types of isolated vacancies under consideration, except for Ni-deficient NiTiSn. A half-metallic character is identified in Sn-deficient NiTiSn and Co/Ti/Sb-deficient CoTiSb. We can explain our findings by introducing an extending Slater-Pauling rule for systems with defects. A ferromagnetic ordering of the local moments due to double exchange appears to be likely.

Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

Directory of Open Access Journals (Sweden)

N. J. Biderman

2016-05-01

Full Text Available Two sets of diffusion-reaction numerical simulations using a finite difference method (FDM were conducted to investigate fast impurity diffusion via interstitial sites in vacancy-rich materials such as Cu(In,GaSe2 (CIGS and Cu2ZnSn(S, Se4 (CZTSSe or CZTS via the dissociative diffusion mechanism where the interstitial diffuser ultimately reacts with a vacancy to produce a substitutional. The first set of simulations extends the standard interstitial-limited dissociative diffusion theory to vacancy-rich material conditions where vacancies are annihilated in large amounts, introducing non-equilibrium vacancy concentration profiles. The second simulation set explores the vacancy-limited dissociative diffusion where impurity incorporation increases the equilibrium vacancy concentration. In addition to diffusion profiles of varying concentrations and shapes that were obtained in all simulations, some of the profiles can be fitted with the constant- and limited-source solutions of Fick’s second law despite the non-equilibrium condition induced by the interstitial-vacancy reaction. The first set of simulations reveals that the dissociative diffusion coefficient in vacancy-rich materials is inversely proportional to the initial vacancy concentration. In the second set of numerical simulations, impurity-induced changes in the vacancy concentration lead to distinctive diffusion profile shapes. The simulation results are also compared with published data of impurity diffusion in CIGS. According to the characteristic properties of diffusion profiles from the two set of simulations, experimental detection of the dissociative diffusion mechanism in vacancy-rich materials may be possible.

Ferromagnetism and half metallicity induced by oxygen vacancies in the double perovskite BaSrNiWO{sub 6}: DFT study

Energy Technology Data Exchange (ETDEWEB)

Aharbil, Y. [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Labrim, H. [Unité Science de la Matière/DERS/Centre National de l’Energie, des Sciences et des Techniques Nucléaires (CNESTEN), Rabat (Morocco); Benmokhtar, S.; Haddouch, M. Ait [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Bahmad, L., E-mail: bahmad@fsr.ac.ma [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco); Belhaj, A. [LIRST, Département de Physique, Faculté Poly-disciplinaire, Université Sultan Moulay Slimane, Béni Mellal (Morocco); Ez-Zahraouy, H.; Benyoussef, A. [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco)

2016-11-01

Using the spin polarized density functional theory (DFT) and exploring the Plane-Wave Self-Consistent Field (PWscf) code implemented in Quantum-ESPRESSO package, we investigate the effect of the Oxygen vacancies (V{sub O}) and the Oxygen interstitial (O{sub i}) on the double perovskite BaSrNiWO{sub 6}. This deals with the magnetic ordering and the electronic structure in such a pure sample exhibiting the insulating anti-ferromagnetic (AFM) state. This study shows that the presence of oxygen deficient defects converts the insulating to half metal with ferromagnetic or anti-ferromagnetic states. The magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell. However, it has been shown that the Oxygen interstitial preserves the anti-ferromagnetic propriety. We have computed the formation energies of different positions of the Oxygen vacancy (V{sub O}) and the Oxygen interstitial (O{sub i}) in the BaSrNiWO{sub 6} compound. We showed that the formation of V{sub O} is easier and vice versa for the O{sub i} formation. The obtained results reveal(V{sub O}) and the Oxygen interstitial (O{sub i}) that the anti-ferromagnetic can be converted to ferromagnetic in the double perovskite BaSrNiWO{sub 6} induced by Oxygen vacancies V{sub O}. - Highlights: • We have studied the ferromagnetism and Half Metallicity in Double Perovskite BaSrNiWO{sub 6}. • We have applied the Ab-inito calculations using the DFT approach. • We showed the effects induced by Oxygen Vacancies and Oxygen interstitial. • We found that the magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell.

Modeling and calculation of RKKY exchange coupling to explain Ti-vacancy-induced ferromagnetism in Ta-doped TiO2

Science.gov (United States)

Majidi, Muhammad Aziz; Bupu, Annamaria; Fauzi, Angga Dito

2017-12-01

We present a theoretical study on Ti-vacancy-induced ferromagnetism in anatase TiO2. A recent experimental study has revealed room temperature ferromagnetism in Ta-doped anatase TiO2thin films (Rusydi et al., 2012) [7]. Ta doping assists the formation of Ti vacancies which then induce the formation of localized magnetic moments around the Ti vacancies. As neighboring Ti vacancies are a few unit cells apart, the ferromagnetic order is suspected to be mediated by itinerant electrons. We propose that such an electron-mediated ferromagnetism is driven by Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction. To examine our hypothesis, we construct a tight-binding based model Hamiltonian for the anatase TiO2 system. We calculate the RKKY exchange coupling constant of TiO2 as a function of distance between local magnetic moments at various temperatures. We model the system by taking only the layer containing a unit of TiO2, at which the Ti vacancy is believed to form, as our effective two-dimensional unit cell. Our model incorporates the Hubbard repulsive interactions between electrons occupying Ti d orbitals treated within mean-field approximation. The density of states profile resulting from the model captures the relevant electronic properties of TiO2, such as the energy gap of 3.4 eV and the n-type character, which may be a measure of the adequacy of the model. The calculated RKKY coupling constant shows that the ferromagnetic coupling extends up to 3-4 unit cells and enhances slightly as temperature is increased from 0 to 400 K. These results support our hypothesis that the ferromagnetism of this system is driven by RKKY mechanism.

Determination of the vacancy formation enthalpy in chromium by positron annihilation

International Nuclear Information System (INIS)

Loper, G.D.; Smedskjaer, L.C.; Chason, M.K.; Siegel, R.W.

1985-01-01

Doppler broadening of the positron annihilation lineshape in 99.99 at. % pure chromium was measured over the temperature range 296 to 2049 0 K. The chromium sample was encapsulated in sapphire owing to its high vapor pressure near melting. Saturation-like behavior of the lineshape was observed near the melting temperature (2130 0 K). A two-state trapping model fit to the data yielded a vacancy formation enthalpy of 2.0 +- 0.2 eV. This result is discussed in relation to extant empirical relations for vacancy migration and self-diffusion in metals and to data from previous self-diffusion and annealing experiments in chromium. It is concluded that the observed vacancy ensemble is unlikely to be responsible for the measured self-diffusion behavior. The implications of the present results in terms of our understanding of mechanisms for self-diffusion in chromium and other refractory bcc metals are discussed

Low-temperature positron lifetime and Doppler-broadening measurements for single-crystal nickel oxide containing cation vacancies

International Nuclear Information System (INIS)

Waber, J.T.; Snead, C.L. Jr.; Lynn, K.G.

1985-01-01

Lifetime and Doppler-broadening measurements for positron annihilation in substoichiometric nickelous oxide have been made concomitantly from liquid-helium to room temperature. The concentration of cation vacancies is readily controlled by altering the ambient oxygen pressure while annealing the crystals at 1673 0 K. It was found that neither of the three lifetimes observed or their relative intensities varied significantly with the oxygen pressure, and the bulk rate only increased slightly when the specimen was cooled from room to liquid-helium temperatures. These results are interpreted as indicating that some of the positrons are trapped by the existing cation vacancies and a smaller fraction by vacancy clusters

Evaluation of structural vacancies for 1/1-Al-Re-Si approximant crystals by positron annihilation spectroscopy

Science.gov (United States)

Yamada, K.; Suzuki, H.; Kitahata, H.; Matsushita, Y.; Nozawa, K.; Komori, F.; Yu, R. S.; Kobayashi, Y.; Ohdaira, T.; Oshima, N.; Suzuki, R.; Takagiwa, Y.; Kimura, K.; Kanazawa, I.

2018-01-01

The size of structural vacancies and structural vacancy density of 1/1-Al-Re-Si approximant crystals with different Re compositions were evaluated by positron annihilation lifetime and Doppler broadening measurements. Incident positrons were found to be trapped at the monovacancy-size open space surrounded by Al atoms. From a previous analysis using the maximum entropy method and Rietveld method, such an open space is shown to correspond to the centre of Al icosahedral clusters, which locates at the vertex and body centre. The structural vacancy density of non-metallic Al73Re17Si10 was larger than that of metallic Al73Re15Si12. The observed difference in the structural vacancy density reflects that in bonding nature and may explain that in the physical properties of the two samples.

Dynamics of ordering processes in annealed dilute systems: Island formation, vacancies at domain boundaries, and compactification

DEFF Research Database (Denmark)

Shah, Peter Jivan; Mouritsen, Ole G.

1990-01-01

The dynamics of the ordering processes in two-dimensional lattice models with annealed vacancies and nonconserved order parameter is studied as a function of temperature and vacancy concentration by means of Monte Carlo temperature-quenching simulations. The models are Ising antiferromagnets...... with couplings leading to twofold-degenerate as well as fourfold-degenerate ordering. The models are quenched into a phase-separation region, which makes it possible for both types of ordering to observe the following scenario of ordering processes: (i) early-time nucleation and growth of ordered domains, (ii......) intermediate-time trapping of the mobile vacancies at the domain boundaries, and (iii) late-time diffusion of vacancies along the domain-boundary network towards the surface. In the case of high dilution, the ordering processes correspond to early-time island formation and late-time coarsening...

Oxygen-vacancy defects on BaTiO3 (001) surface: a quantum chemical study

International Nuclear Information System (INIS)

Duque, Carlos; Stashans, Arvids

2003-01-01

A quantum-chemical study of technologically important BaTiO 3 crystal and oxygen-vacancy defects on its (001) surface is reported in the present work. The computations are made using a quantum-chemical method developed for periodic systems (crystals), which is based on the Hartree-Fock theory. The atomic rearrangement due to the surface creation is obtained for a pure BaTiO 3 by means of the periodic large unit cell (LUC) model and using an automated geometry optimisation procedure. The same technique is employed to study the electronic and structural properties of the material due to the presence of an O vacancy and F centre (two electrons trapped in an oxygen vacancy). The computations are carried out for both cubic and tetragonal lattices

Pressure response of vacancy ordered maghemite (γ-Fe2O3) and high pressure transformed hematite (α-Fe2O3)

International Nuclear Information System (INIS)

Hearne, Giovanni; Pischedda, Vittoria

2012-01-01

Combined XRD and Mössbauer effect spectroscopy studies to high pressures of ∼30 GPa of vacancy ordered maghemite are presented. The vacancy ordered superstructure is robust and remains intact up to the pressure-induced onset transition to hematite at 13–16 GPa. The pressure transformed hematite is shown to be crystallographically textured, unlike the randomised low pressure maghemite phase. This arises out of a pressure or stress instigated topotactic transformation of the cubic-spinel to hexagonal-corundum structure. The textured sample permits us to obtain information on the spin reorientation behavior of the pressure transformed hematite in compression and decompression sequences. Spin reorientation is restricted to ∼15° over wide pressure ranges, attributable to the effect of entrapped vacancies in the high pressure structure. Thus there are structural and magnetic peculiarities specific to pressure transformed hematite not evident in pressurized hematite starting material. These are triggered by the maghemite→hematite transformation. - Graphical abstract: Pressure instigated topotactic transformation of vacancy ordered γ-Fe 2 O 3 →α-Fe 2 O 3 . There is restricted spin (B hf ) reorientation in the new pressure transformed hematite due to entrapped vacancies. The change in direction of V zz signifies a distortion of the FeO 6 octahedral local environment. Highlights: ► Robust vacancy ordered superstructure in maghemite to high pressures. ► Pressure instigated topotactic transformation to hematite and subsequent texture. ► Defect trapping in the pressure transformed hematite. ► Entrapped defects restricts spin reorientation in pressure transformed hematite. ► Contrasting behavior with pressurized hematite starting material.

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

Science.gov (United States)

Higbie, J. M.; Perreault, J. D.; Acosta, V. M.; Belthangady, C.; Lebel, P.; Kim, M. H.; Nguyen, K.; Demas, V.; Bajaj, V.; Santori, C.

2017-05-01

Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We measure the two-photon fluorescence cross section of a negatively charged silicon vacancy (Si -V- ) in ion-implanted bulk diamond to be 0.74 (19 )×10-50 cm4 s /photon at an excitation wavelength of 1040 nm. Compared to the diamond nitrogen-vacancy center, the expected detection threshold of a two-photon excited Si -V center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and we discuss the physical interpretation of the spectra in the context of existing models of the Si -V energy-level structure.

Neutron-induced helium implantation in GCFR cladding

International Nuclear Information System (INIS)

Yamada, H.; Poeppel, R.B.; Sevy, R.H.

1980-10-01

The neutron-induced implantation of helium atoms on the exterior surfaces of the cladding of a prototypic gas-cooled fast reactor (GCFR) has been investigated analytically. A flux of recoil helium particles as high as 4.2 x 10 10 He/cm 2 .s at the cladding surface has been calculated at the peak power location in the core of a 300-MWe GCFR. The calculated profile of the helium implantation rates indicates that although some helium is implanted as deep as 20 μm, more than 99% of helium particles are implanted in the first 2-μm-deep layer below the cladding surface. Therefore, the implanted helium particles should mainly affect surface properties of the GCFR cladding

Trapping, self-trapping and the polaron family

International Nuclear Information System (INIS)

Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

2007-01-01

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

Science.gov (United States)

Tetienne, J.-P.; de Gille, R. W.; Broadway, D. A.; Teraji, T.; Lillie, S. E.; McCoey, J. M.; Dontschuk, N.; Hall, L. T.; Stacey, A.; Simpson, D. A.; Hollenberg, L. C. L.

2018-02-01

We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centers in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature, and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centers. We find that, for the energy (4 -30 keV) and dose (5 ×1011-1013ions/cm 2 ) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at ≥1100 ∘C . Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving ≈10 -17 nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centers for high-sensitivity sensing and imaging applications.

Ion implantation induced martensite nucleation in SUS301 steel

International Nuclear Information System (INIS)

Kinoshita, Hiroshi; Takahashi, Heishichiro; Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Watanabe, Seiichi

2007-01-01

Phase transformation behaviors of the austenitic 301 stainless steel was studied under Fe + , Ti + and Ar + ions implantation at room temperature with 100, 200 and 300 keV up to fluence of 1x10 21 ions/m 2 and the microstructures were observed by means of transmission electron microscopy (TEM). The plane and cross-sectional observations of the implanted specimen showed that the induced-phases due to implantation from the γ matrix phase were identified as α' martensite phases with the orientation relationship of (11-bar0) α parallel (111-bar) γ and [111] α parallel [011] γ close to the Kurdjumov-Sachs (K-S). The ion implantation induced phases nucleated near the surface region and the depth position of the nucleation changed depending on the ion accelerating energy and ion species. It was also found that the induced marten sites phases nucleate under the influence of the stress distribution, which is introduced due to the concentration of implanted ions, especially due to the stress gradient caused by the corresponding concentration gradient. (author)

Detection of current-induced vacancies in thin aluminum endash copper lines using positrons

International Nuclear Information System (INIS)

Asoka-Kumar, P.; OBrien, K.; Lynn, K.G.; Simpson, P.J.; Rodbell, K.P.

1996-01-01

In situ depth-resolved positron annihilation spectroscopy (PAS) is used to show dynamic formation of vacancies in 1 μmx1 μm Al-0.5 wt% Cu lines under current flow. We show that the number of vacancies in these lines increases when a dc current (8x10 4 A/cm 2 ) is applied. This increase in vacancy concentration is substantially greater than that due to thermal vacancy generation alone (4x10 18 cm -3 versus 3x10 17 cm -3 ). Isothermal measurements (with no current flow) yield a vacancy formation energy of 0.60±0.02 eV. These results show that PAS can be used to examine the initial stages of interconnect damage due to electromigration. copyright 1996 American Institute of Physics

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

International Nuclear Information System (INIS)

Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

2005-01-01

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA

Localization of ionization-induced trapping in a laser wakefield accelerator using a density down-ramp

CERN Document Server

Hansson, M.; Ekerfelt, H.; Aurand, B.; Gallardo Ganzalez, I.; Desforges, F. G.; Davoine, X.; Maitrallain, A.; Reymond, S.; Monot, P.; Persson, A.; Dobosz Dufrénoy S.; Wahlström C-G.; Cros, B.; Lundh, O.

2016-01-01

We report on a study on controlled trapping of electrons, by field ionization of nitrogen ions, in laser wakefield accelerators in variable length gas cells. In addition to ionization-induced trapping in the density plateau inside the cells, which results in wide, but stable, electron energy spectra, a regime of ionization-induced trapping localized in the density down-ramp at the exit of the gas cells, is found. The resulting electron energy spectra are peaked, with 10% shot-to-shot fluctuations in peak energy. Ionization-induced trapping of electrons in the density down-ramp is a way to trap and accelerate a large number of electrons, thus improving the efficiency of the laser-driven wakefield acceleration.

In situ Transmission Electron Microscopy He{sup +} implantation and thermal aging of nanocrystalline iron

Energy Technology Data Exchange (ETDEWEB)

Muntifering, Brittany, E-mail: brmunti@sandia.gov [Sandia National Laboratories, Albuquerque, NM, 87185 (United States); Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL, 60208 (United States); Fang, Youwu [Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL, 60208 (United States); Leff, Asher C. [Department of Materials Science & Engineering, Drexel University, Philadelphia, PA, 19104 (United States); Dunn, Aaron [Sandia National Laboratories, Albuquerque, NM, 87185 (United States); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, UMI 2958 Georgia Tech CNRS, 57070, Metz (France); Qu, Jianmin [Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL, 60208 (United States); School of Engineering, Tufts University, Medford, MA, 02155 (United States); Taheri, Mitra L. [Department of Materials Science & Engineering, Drexel University, Philadelphia, PA, 19104 (United States); Dingreville, Remi; Hattar, Khalid [Sandia National Laboratories, Albuquerque, NM, 87185 (United States)

2016-12-15

The high density of interfaces in nanostructured materials are hypothesized to improve radiation tolerance compared to coarse-grained materials. In order to investigate the roles of vacancies, self-interstitials, and helium, both room temperature in situ TEM He{sup +} implantation and annealing, as well as high temperature He{sup +} implantation was performed on nanocrystalline iron. Dislocation loops are formed by the accumulation of mobile point defects rather than by displacement cascades at intermediate temperatures. Around 600 °C, loops disappeared through gradual shrinking, which is hypothesized to correspond to the annihilation of self-interstitial atoms by mobile vacancies that also resulted in cavity formation. The room temperature implantation resulted in cavities evenly distributed throughout the grain after annealing, whereas cavities were predominately observed at grain boundaries for the elevated temperature implantation. This difference is associated with the formation of stable helium-vacancy complexes in the grains during room temperature implantation, which is not present during high temperature implantation. - Highlights: • In situ TEM He{sup +} implantation and annealing was performed on nanocrystalline iron. • Small grains limited loop size and resulted in complete disappearance of loops by 600 °C. • Implantation followed by annealing resulted in cavities evenly distributed through grain. • Cavities predominately observed at grain boundaries after He{sup +} implantation at 600 °C.

Coupling an optical trap to a mass separator

Energy Technology Data Exchange (ETDEWEB)

Chamberlin, E.P.; Sandberg, V.D.; Tupa, D.; Vieira, D.J.; Zhao, X.X. [Los Alamos National Lab., NM (United States); Guckert, R.; Wollnik, H. [Los Alamos National Lab., NM (United States)]/[Giessen Univ. (Germany); Preston, D.W. [Los Alamos National Lab., NM (United States)]/[California State Univ., Hayward, CA (United States)

1996-12-31

The efficient coupling of a magneto-optical trap to a mass separator is being developed to undertake high-precision electroweak interaction measurements in a series of radioisotopes. The use of ion implantation and subsequent heated-foil release is being pursued as a suitable way of introducing radioactive samples into the ultrahigh vacuum region of an optical trap without gas loading. This paper discusses the layout of the mass separator,the coupling to a magneto- optical trap, and the implantation and release scheme.

Coupling an optical trap to a mass separator

International Nuclear Information System (INIS)

Chamberlin, E.P.; Sandberg, V.D.; Tupa, D.; Vieira, D.J.; Zhao, X.X.; Guckert, R.; Wollnik, H.; Preston, D.W.

1996-01-01

The efficient coupling of a magneto-optical trap to a mass separator is being developed to undertake high-precision electroweak interaction measurements in a series of radioisotopes. The use of ion implantation and subsequent heated-foil release is being pursued as a suitable way of introducing radioactive samples into the ultrahigh vacuum region of an optical trap without gas loading. This paper discusses the layout of the mass separator,the coupling to a magneto- optical trap, and the implantation and release scheme

Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

Energy Technology Data Exchange (ETDEWEB)

Ayedh, H. M.; Svensson, B. G. [University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Hallén, A. [School of Information and Communication Technology (ICT), Royal Institute of Technology, SE-164 40 Kista-Stockholm (Sweden)

2015-11-07

The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.

Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Science.gov (United States)

Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

2018-04-01

Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

Fast and slow border traps in MOS devices

International Nuclear Information System (INIS)

Fleetwood, D.M.

1996-01-01

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between ∼10 -6 s and ∼1 s) and slower (switching times greater than ∼1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO 2 associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps

Exploring of defects in He+ implanted Si(100) by slow positron beam

International Nuclear Information System (INIS)

Zhang Tianhao; Weng Huimin; Fan Yangmei; Du Jiangfeng; Zhou Xianyi; Han Rongdian; Zhang Miao; Lin Chenglu

2001-01-01

Si(100) crystal implanted by 5 x 10 16 cm -2 , 140 keV He + was probed by slow positron beam, and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1 nm in diameter were the dominant defects, while the deeper region around the He + projected range was heavily damaged and had dense larger helium micro-bubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However, annealing at high temperature enlarged the diameters of micro-bubbles and microvoids

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

International Nuclear Information System (INIS)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-01-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In 2 O 3 and SnO 2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies. (paper)

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

Science.gov (United States)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Electric field dependent paramagnetic defect creation in single step implanted Simox films

International Nuclear Information System (INIS)

Leray, J.L.; Margail, J.

1991-01-01

X irradiation induced oxygen-vacancy defect creation has been studied in SIMOX produced by single step implantation and annealing. It is shown that SIMOX is substantially more radiation sensitive (for these defects) than thermal or bulk oxide. Irradiation in the presence of an electric field 0.5 -1 MV cm -1 is found to enhance the rate of defect creation by ≥ 2 times. Further enhanced defect creation is observed in SIMOX samples whose substrate has been chemically thinned prior to irradiation. This enhancement is attributed to modification of the network induced by hydrogen introduced during the thinning process

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

TEM investigation of the microstructural evolution in nickel during MeV helium implantation

International Nuclear Information System (INIS)

Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

1986-01-01

In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P{sup +}-implanted Si studied using monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kitano, Tomohisa; Watanabe, Masahito; Kawano, Takao; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa

1996-04-01

Effects of oxygen atoms recoiled from SiO{sub 2} films on depth profiles of defects and annealing processes in P{sup +}-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P{sup +}-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700degC. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO{sub 2}/Si interface, and such defects were dissociated by annealing at 1000degC. (author)

Vacancy-impurity centers in diamond: prospects for synthesis and applications

Science.gov (United States)

Ekimov, E. A.; Kondrin, M. V.

2017-06-01

The bright luminescence of impurity-vacancy complexes, combined with high chemical and radiation resistance, makes diamond an attractive platform for the production of single-photon emitters and luminescent biomarkers for applications in nanoelectronics and medicine. Two representatives of this kind of defects in diamond, silicon-vacancy (SiV) and germanium-vacancy (GeV) centers, are discussed in this review; their similarities and differences are demonstrated in terms of the more thoroughly studied nitrogen-vacancy (NV) complexes. The recent discovery of GeV luminescent centers opens a unique opportunity for the controlled synthesis of single-photon emitters in nanodiamonds. We demonstrate prospects for the high-pressure high-temperature (HPHT) technique to create single-photon emitters, not only as an auxiliary to chemical vapor deposition (CVD) and ion-implantation methods but also as a primary synthesis tool for producing color centers in nanodiamonds. Besides practical applications, comparative studies of these two complexes, which belong to the same structural class of defects, have a fundamental importance for deeper understanding of shelving levels, the electronic structure, and optical properties of these centers. In conclusion, we discuss several open problems regarding the structure, charge state, and practical application of these centers, which still require a solution.

Vacancy induced half-metallicity in half-Heusler semiconductors

KAUST Repository

Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

Science.gov (United States)

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-11-22

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT

Directory of Open Access Journals (Sweden)

Christoph Slouka

2016-11-01

Full Text Available The different properties of acceptor-doped (hard and donor-doped (soft lead zirconate titanate (PZT ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

Oxygen vacancies at the spinel/perovskite γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterointerface probed by resonant photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Schuetz, Philipp; Pfaff, Florian; Zapf, Michael; Gabel, Judith; Dudy, Lenart; Berner, Goetz; Sing, Michael; Claessen, Ralph [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Chen, Yunzhong; Pryds, Nini [Department of Energy Conversion and Storage, Technical University of Denmark, Risoe (Denmark); Schlueter, Christoph; Lee, Tien-Lin [Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot (United Kingdom)

2016-07-01

The spinel/perovskite heterointerface between the band insulators γ-Al{sub 2}O{sub 3} and SrTiO{sub 3} hosts a two-dimensional electron system (2DES) with exceptionally high electron mobility. Soft x-ray resonant photoelectron spectroscopy at the Ti L absorption edge is used to probe the Ti 3d derived interface states. Marked differences in the resonance behavior are found for the SrTiO{sub 3} valence band and the different interface states, which are observed in the band gap of SrTiO{sub 3}. A comparison to X-ray absorption spectra of Ti 3d{sup 0} and Ti 3d{sup 1} systems reveals the presence of different types of electronic states with Ti 3d character, i.e., oxygen vacancy induced, trapped in-gap states and itinerant states contributing to the 2DES. Exposure to low doses of oxygen during irradiation allows for the reversible manipulation of the oxygen stoichiometry, thus revealing the presence of an oxygen vacancy-induced state, which is characteristic for this spinel/perovskite interface.

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-10-07

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500°C. After 600–700°C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900°C), oxygen-related defects were the major point defects and they were located at <25 nm.

Ion implantation induced blistering of rutile single crystals

Energy Technology Data Exchange (ETDEWEB)

Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

2015-07-01

The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

Self-trapping of helium in metals

International Nuclear Information System (INIS)

Wilson, W.D.; Bisson, C.L.; Baskes, M.I.

1981-01-01

Atomistic calculations are presented which demonstrate that helium atoms in a metal lattice are able to cluster with each other, producing vacancies and nearby self-interstitial defects. Even a small number of helium atoms is found to be sufficient to create these large distortions. As few as five interstitial helium can spontaneously produce a lattice vacancy and nearby self-interstitial. An eight-helium-atom cluster gives rise to two such defects, and 16 helium atoms to more than five self-interstitial vacancy pairs. It was noted that the self-interstitials prefer to agglomerate on the same ''side'' of the helium cluster rather than to spread themselves out uniformly. The binding energy of each additional helium atom to these clusters increases with helium concentration and the trap is apparently unsaturable. A rate theory using these atomistic binding energies has been used to calculate the kinetics of helium-bubble nucleation and growth. The results are consistent with measurements of the properties of helium resulting from tritium decay

Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage

International Nuclear Information System (INIS)

Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan

2014-01-01

ZnO surfaces adsorb oxygen in the dark and emit CO 2 when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO 2 . The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called “green luminescence” in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy completes

Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage

Energy Technology Data Exchange (ETDEWEB)

Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan, E-mail: shalish@ee.bgu.ac.il [Ben Gurion University, Beer Sheva 84105 (Israel)

2014-01-21

ZnO surfaces adsorb oxygen in the dark and emit CO{sub 2} when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO{sub 2}. The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called “green luminescence” in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Energy Technology Data Exchange (ETDEWEB)

Mooney, P. M.; Jiang, Zenan; Basile, A. F. [Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada); Zheng, Yongju; Dhar, Sarit [Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

2016-07-21

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

Characterization of vacancy type defects in Electronic Materials by Positron Lifetime and Age-Momentum Correlation Spectroscopy

Science.gov (United States)

Suzuki, Ryoichi; Ohdaira, Toshiyuki

2002-03-01

Positron annihilation spectroscopy is known to be sensitive to vacancy type defects. At the National Institute of Advanced Industrial Science and Technology (AIST) Japan, the authors have developed a measurement system which enables us to perform depth-selective positron annihilation lifetime spectroscopy (PALS) and positron age-momentum correlation (AMOC) spectroscopy with an intense slow positron beam. PALS gives us information on the size of vacancies whereas AMOC gives us information on not only vacancy sizes but also impurities or chemical environments. Using this system, we have carried out defect characterization experiments on various electronic materials, e.g. ion implanted Si, SiO2/Si, MOS, CVD or SOD (spin-on-dielectric) grown low dielectric insulator films, etc.

Electron spin resonance from NV centers in diamonds levitating in an ion trap

International Nuclear Information System (INIS)

Delord, T; Nicolas, L; Schwab, L; Hétet, G

2017-01-01

We report observations of the electron spin resonance (ESR) of nitrogen vacancy centers in diamonds that are levitating in an ion trap. Using a needle Paul trap operating under ambient conditions, we demonstrate efficient microwave driving of the electronic spin and show that the spin properties of deposited diamond particles measured by the ESR are retained in the Paul trap. We also exploit the ESR signal to show angle stability of single trapped mono-crystals, a necessary step towards spin-controlled levitating macroscopic objects. (paper)

First-principles study of Ga-vacancy induced magnetism in β-Ga2O3.

Science.gov (United States)

Yang, Ya; Zhang, Jihua; Hu, Shunbo; Wu, Yabei; Zhang, Jincang; Ren, Wei; Cao, Shixun

2017-11-01

First principles calculations based on density functional theory were performed to study the electronic structure and magnetic properties of β-Ga 2 O 3 in the presence of cation vacancies. We investigated two kinds of Ga vacancies at different symmetry sites and the consequent structural distortion and defect states. We found that both the six-fold coordinated octahedral site and the four-fold coordinated tetrahedral site vacancies can lead to a spin polarized ground state. Furthermore, the calculation identified a relationship between the spin polarization and the charge states of the vacancies, which might be explained by a molecular orbital model consisting of uncompensated O 2- 2p dangling bonds. The calculations for the two vacancy systems also indicated a potential long-range ferromagnetic order which is beneficial for spintronics application.

Room-temperature ferromagnetism observed in C-/N-/O-implanted MgO single crystals

Science.gov (United States)

Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Zhang, Jie; Zhang, Lijuan; Kong, Wei; Weng, Huimin; Ye, Bangjiao

2013-01-01

MgO single crystals were implanted with 70 keV C/N/O ions at room temperature with respective doses of 2 × 1016 and 2 × 1017 ions/cm2. All samples with high-dose implantation showed room temperature hysteresis in magnetization loops. Magnetization and slow positron annihilation measurements confirmed that room temperature ferromagnetism in O-implanted samples was attributed to the presence of Mg vacancies. Furthermore, the introduction of C or N played more effective role in ferromagnetic performance than Mg vacancies. Moreover, the magnetic moment possibly occurred from the localized wave function of unpaired electrons and the exchange interaction formed a long-range magnetic order.

Enhanced Photocatalytic Activity of Vacuum-activated TiO2 Induced by Oxygen Vacancies.

Science.gov (United States)

Dong, Guoyan; Wang, Xin; Chen, Zhiwu; Lu, Zhenya

2018-05-01

TiO 2 (Degussa P25) photocatalysts harboring abundant oxygen vacancies (Vacuum P25) were manufactured using a simple and economic Vacuum deoxidation process. Control experiments showed that temperature and time of vacuum deoxidation had a significant effect on Vacuum P25 photocatalytic activity. After 240 min of visible light illumination, the optimal Vacuum P25 photocatalysts (vacuum deoxidation treated at 330 °C for 3 h) reach as high as 94% and 88% of photodegradation efficiency for rhodamine B (RhB) and tetracycline, respectively, which are around 4.5 and 4.9 times as that of pristine P25. The XPS, PL and EPR analyses indicated that the oxygen vacancies were produced in the Vacuum P25 during the vacuum deoxidation process. The oxygen vacancy states can produce vacancy energy level located below the conduction band minimum, which resulting in the bandgap narrowing, thus extending the photoresponse wavelength range of Vacuum P25. The positron annihilation analysis indicated that the concentrations ratio of bulk and surface oxygen vacancies could be adjusted by changing the vacuum deoxidation temperature and time. Decreasing the ratio of bulk and surface oxygen vacancies was shown to improve photogenerated electron-hole pair separation efficiency, which leads to an obvious enhancement of the visible photocatalytic activities of Vacuum P25. © 2017 The American Society of Photobiology.

Room-temperature annealing of Si implantation damage in InP

International Nuclear Information System (INIS)

Akano, U.G.; Mitchell, I.V.

1991-01-01

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

Positron spectroscopy analysis of vacancy-solute nanoaggregates in Al-Cu

International Nuclear Information System (INIS)

Ferragut, R.; Ferro, G.; Biasini, M.; Dupasquier, A.; Somoza, A.

2004-01-01

This work addresses the process of ageing in Al-4wt.% Cu at two temperatures (150 C, 180 C) and in conditions of secondary ageing at temperatures up to 60 C, after artificial ageing treatment at 150 C, Positron lifetime and coincidence Doppler broadening measurements are reported. The analysis shows an initial association of positron trapping sites with Cu (about 9 at.% Cu at the annihilation site) that decreases to 7/6% in the initial stages of ageing, but then increases sharply (up to 25 at.% Cu after 300 hours at 180 C). The positron lifetime also displays an initial decrease followed by a final increase. The results confirm the hypothesis that positrons are not trapped in GP[1] zones, but show that trapping occurs in GP[2] zones formed at 150 C. During secondary ageing, the vacancy-Cu association as well as the positron lifetime decrease with the ageing time. This is attributed to the formation of GP[1] zones due to residual supersaturation. (orig.)

Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering

Science.gov (United States)

Abdullah, S. A.; Sahdan, M. Z.; Nafarizal, N.; Saim, H.; Bakri, A. S.; Cik Rohaida, C. H.; Adriyanto, F.; Sari, Y.

2018-04-01

This paper highlights the defect levels using photoluminescence spectroscopy of TiO2 thin films. The TiO2 were deposited by Magnetron Sputtering system with 200, 300, 400, and 500 °C substrate temperature on microscope glass substrate. The PL result shows profound effect of various substrate temperatures to defect levels of oxygen vacancies and Ti3+ at titanium interstitial site. Increasing temperature would minimize the oxygen vacancy defect, however Ti3+ shows otherwise. Green region of PL consist of trapped hole for oxygen vacancy, while red region of PL is trapped electron associated to structural defect Ti3+. Green PL is dominant peak at temperature 200 °C, indicating that oxygen vacancy is the main defect at this temperature. However, PL peak shows slightly same value for others samples indicating that the temperature did not give high influence to other level of defect after 200 °C.

ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation, and gamma-induced positron spectroscopy

Science.gov (United States)

Ji, J.; Colosimo, A. M.; Anwand, W.; Boatner, L. A.; Wagner, A.; Stepanov, P. S.; Trinh, T. T.; Liedke, M. O.; Krause-Rehberg, R.; Cowan, T. E.; Selim, F. A.

2016-08-01

The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors, and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.

Defects induced by helium implantation in SiC

International Nuclear Information System (INIS)

Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

2008-01-01

SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

Effects of internal hydrogen on the vacancy loop formation probability in Al

International Nuclear Information System (INIS)

Bui, T.X.; Sirois, E.; Robertson, I.M.

1990-04-01

The effect of internal hydrogen on the formation of vacancy dislocation loops from heavy-ion generated displacement cascades in Al has been investigated. Samples of high-purity aluminum and aluminum containing 900 and 1300 appM of hydrogen were irradiated at room temperature with 50 keV Kr+ ions. The ion dose rate was typically 2 x 10 10 ions cm -2 sec -1 and the ion dose was between 10 11 and 10 13 ion cm -2 . Under these irradiation conditions, dislocation loops were observed in all compositions, although the formation probability was relatively low (less than 10 percent of the displacement cascades produced a vacancy loop). The loop formation probability was further reduced by the presence of hydrogen. No difference in the geometry or the size of the loops created in the hydrogen free and hydrogen charged samples was found. These results are difficult to interpret, and the explanation may lie in the distribution and form of the hydrogen. To account for the large hydrogen concentrations and from calculations of the energy associated with hydrogen entry into aluminum, it has been suggested that the hydrogen enters the aluminum lattice with an accompanying vacancy. This will create hydrogen-vacancy complexes in the material; two dimensional complexes have been detected in the hydrogen-charged, but unirradiated, samples by the small-angle x-ray scattering technique. The possibility of these complexes trapping the vacancies produced by the cascade process exists thus lowering the formation probability. However, such a mechanism must occur within the lifetime of the cascade. Alternatively, if a displacement cascade overlaps with the hydrogen-vacancy complexes, the lower atomic density of the region will result in an increase in the cascade volume (decrease in the local vacancy concentration) which will also reduce the loop formation probability

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

Energy Technology Data Exchange (ETDEWEB)

Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

2016-12-15

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

XPS and XAES measurements on trapped rare gases in transition metals

International Nuclear Information System (INIS)

Baba, Y.; Yamamoto, H.; Sasaki, T.A.

1992-01-01

Electronic structures of rare gases implanted in various transition metals have been investigated by means of an X-ray photoelectron spectroscopy (XPS) and X-ray-induced Auger electron spectroscopy (XAES). The Auger-parameter method is applied to the evaluation of electronic relaxation energy of rare gas atoms due to the surrounding metal potential. The extra-atomic relaxation energy of four kinds of rare gases (Ne, Ar, Kr, Xe) in the same metal matrix (Ti) increases with the atomic mass of the rare gases. On the other hand, the extra-atomic relaxation energy of the same rare gas (Xe) in different metal matrices ranges from 3.0 eV (in Mo). These values increase with the number of d-electrons in the metals. This tendency and the absolute values of the relaxation energies are in good agreement with those calculated for 3d transition metals referenced to their gas-phase values. Based on these results, it is concluded that the energetically implanted rare gases are trapped at the substitution site in the metal lattice as an isolated atom, and the trapped atoms feel the surrounding metal potential. It is also made clear that the potential affecting the implanted atom is d-like, and the relaxation energy of the implanted rare gas during the photoemission process is almost equal to those of the metal itself. (orig.)

Depth profiling of boron implanted silicon by positron beam

International Nuclear Information System (INIS)

Oevuenc, S.

2004-01-01

Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

Spatial effects in the 800 keV {sup 3}He implantation in W followed by isochronal annealing at 900 K

Energy Technology Data Exchange (ETDEWEB)

De Backer, A., E-mail: Andree.de-backer@univ-lille1.fr [Unité Matériaux Et Transformations, UMET, UMR 8207, Université de Lille 1, F-59655 Villeneuve d’Ascq (France); Laboratoire commun EDF-CNRS Étude et Modélisation des Microstructures pour le Vieillissement des Matériaux (EM2VM) (France); Ortiz, C.J. [Laboratorio Nacional de Fusión por Confinamiento Magnético – CIEMAT, Avenida Complutense 40, E-28040 Madrid (Spain); Domain, C. [EDF R and D, Dpt Matériaux et Mécanique des Composants, F-77250 Moret sur Loing (France); Laboratoire commun EDF-CNRS Étude et Modélisation des Microstructures pour le Vieillissement des Matériaux (EM2VM) (France); Barthe, M.F. [CNRS, UPR3079 CEMHTI, 1D avenue de la Recherche Scientifique, F-45071 Orléans cedex 2 (France); Université d’Orléans, Faculté des Sciences, Avenue du Parc Floral, BP 6749, F-45067 Orléans cedex 2 (France); Becquart, C.S. [Unité Matériaux Et Transformations, UMET, UMR 8207, Université de Lille 1, F-59655 Villeneuve d’Ascq (France); Laboratoire commun EDF-CNRS Étude et Modélisation des Microstructures pour le Vieillissement des Matériaux (EM2VM) (France)

2013-05-15

The effect of fluence on the depth distribution of vacancy clusters in the track region of room temperature 800 keV {sup 3}He atom implanted tungsten further annealed up to 900 K has been investigated using an Object Kinetic Monte Carlo (OKMC) approach. The results show that the width and the position of the maximum size of the depth distribution strongly depend on the implantation fluence. For the high implantation fluence, the vacancy clusters are the largest in the first 100 nm close to the surface, whereas, for the low implantation fluence, the distribution is more uniform in size between 100 and 300 nm from the surface. The vacancy clusters are always smaller very close to the surface, and this whatever the fluence. The trends observed are in good agreement with the experimental Positron Annihilation Spectroscopy (PAS) results.

Mechanism of dopant-vacancy association in α-quartz GeO2

KAUST Repository

Wang, Hao; Chroneos, Alexander; Schwingenschlö gl, Udo

2013-01-01

Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

Mechanism of dopant-vacancy association in α-quartz GeO2

KAUST Repository

Wang, Hao

2013-02-28

Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO_3(0 0 1)

International Nuclear Information System (INIS)

Suwanwong, S.; Eknapakul, T.; Rattanachai, Y.; Masingboon, C.; Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H.; King, P.D.C.; Hodak, S.K.; Meevasana, W.

2015-01-01

Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO_3 is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO_3(0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO_3 surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

Perturbation of the γ angular distribution due to vacancy-induced quadrupole interaction in metals

International Nuclear Information System (INIS)

Abromeit, C.

1976-01-01

This paper presents an investigation of the influence of diffusing vacancies on the results of PAC/PAD experiments. The fluctuating hyperfine interaction process, caused by thermal hopping of the vacancies, is described by a stochastic model, and the mean value of the density matrix time development operator of the probe nucleus. First, the nuclear perturbation factors, containing all information about the interaction of the nuclear spin system with the environment, are defined. The stochastic process of vacancy diffusion in a discrete lattice is presented, and approximation methods are given leading to a significant simplification and in some cases even make possible an evaluation at all. The problem of vacancy preparation at the initial stage of the PAC/PAD-experiment is studied. For the electric field gradients produced by the vacancies at the position of the probe nucleus, an empirical ansatz is given. For different lattice structures, numerical results for integral and differential measurements with and without an applied external magnetic field are presentd. These results are discussed in view of the approximations made and compared with the experiment. Also, the influence of the initial vacancy distribution on the calculated perturbation factors is investigated. The results show good agreement with experimental data. (orig./HPOE) [de

Defects spectroscopy by means of the simple trapping model of the Fe78Si9B13 alloy

International Nuclear Information System (INIS)

Lopez M, A.; Cabral P, A.; Garcia S, S.F.

2007-01-01

In this work it is analyzed quantitatively the results of the positron annihilation in the Fe 78 Si 9 B 13 alloy by means of the simple trapping model. From this analysis its are derived: a reason of positron trapping in the defects (K), the defects concentration (C d ) and the electronic density associated to the defect (n d ); both first parameters, (K, C d ) its increase and n d diminishes when increasing the alloy temperature. From this analysis it is also inferred that the defect consists of a multi vacancy of between 15 and 20 mono vacancies. (Author)

Nanodiamonds with silicon vacancy defects for nontoxic photostable fluorescent labeling of neural precursor cells.

Science.gov (United States)

Merson, Tobias D; Castelletto, Stefania; Aharonovich, Igor; Turbic, Alisa; Kilpatrick, Trevor J; Turnley, Ann M

2013-10-15

Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiV-containing NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.

Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sellaiyan, S.; Uedono, A. [University of Tsukuba, Division of Applied Physics, Tsukuba, Ibaraki (Japan); Sivaji, K.; Janet Priscilla, S. [University of Madras, Department of Nuclear Physics, Chennai (India); Sivasankari, J. [Anna University, Department of Physics, Chennai (India); Selvalakshmi, T. [National Institute of Technology, Nanomaterials Laboratory, Department of Physics, Tiruchirappalli (India)

2016-10-15

Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F{sub 2} {sup 2+} and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F{sub 2} {sup 2+} to F{sup +} and this F{sup +} is converted into F centers at 416 nm. (orig.)

Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

Science.gov (United States)

Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

2016-10-01

Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 °C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 °C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 °C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F2 2+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F2 2+ to F+ and this F+ is converted into F centers at 416 nm.

Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

International Nuclear Information System (INIS)

Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

2016-01-01

Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F_2 "2"+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F_2 "2"+ to F"+ and this F"+ is converted into F centers at 416 nm. (orig.)

Roles of Pauli correlations, channel couplings, and shake-off in ion-induced KL/sup v/ and K2L/sup v/ multiple-vacancy production

International Nuclear Information System (INIS)

Becker, R.L.; Ford, A.L.; Reading, J.F.

1983-01-01

Cross sections for target K-plus-L-shell multiple-vacancy production by ions can be inferred from experimental measurements of K x-ray and Auger satellite intensities. The theory of K/sup n/L/sup v/ multiple-vacancy distributions has been generalized from the single-particle model (the statistically independent electron approximation) to the independent Fermi particle model. The Pauli correlations (electron exchange terms) are found to nearly cancel in many cases because of a tendency toward random phases. This results in the first quantal demonstration that the vacancy distribution is nearly binomial (but slightly narrower). Calculations have been generalized from the traditional first-order approximations to unitary approximations (first Magnus and coupled-channels) which correctly predict the saturation of the mean vacancy probability with increasing projectile charge. The recent availability of satellite and hypersatellite data for the same collision system makes possible the beginning of an investigation of the effects of increased removal energies and increased shaking in hypersatellites (K 2 L/sup v/) as compared with satellites. We review our unified treatment of ion-plus-shaking induced amplitudes for L-vacancy production accompanying ion-generated K-holes. Calculations for C 6+ + Ne satellite and hypersatellite vacancy distributions are presented

Macroscopic rate equation modeling of trapping/detrapping of hydrogen isotopes in tungsten materials

Energy Technology Data Exchange (ETDEWEB)

Hodille, E.A., E-mail: etienne.hodille@cea.fr [CEA, IRFM, F-13108 Saint Paul lez Durance (France); Bonnin, X. [LSPM-CNRS, Université Paris 13, Sorbonne Paris Cité, F-93430 Villetaneuse (France); Bisson, R.; Angot, T. [Aix-Marseille Université, PIIM, CNRS, UMR 7345, 13397 Marseille (France); Becquart, C.S. [Université Lille I, UMET, UMR 8207, 59655 Villeneuve d’Ascq cédex France (France); Layet, J.M. [Aix-Marseille Université, PIIM, CNRS, UMR 7345, 13397 Marseille (France); Grisolia, C. [CEA, IRFM, F-13108 Saint Paul lez Durance (France)

2015-12-15

Relevant parameters for trapping of Hydrogen Isotopes (HIs) in polycrystalline tungsten are determined with the MHIMS code (Migration of Hydrogen Isotopes in MaterialS) which is used to reproduce Thermal Desorption Spectrometry experiments. Three types of traps are found: two intrinsic traps (detrapping energy of 0.87 eV and 1.00 eV) and one extrinsic trap created by ion irradiation (detrapping energy of 1.50 eV). Then MHIMS is used to simulate HIs retention at different fluences and different implantation temperatures. Simulation results agree well with experimental data. It is shown that at 300 K the retention is limited by diffusion in the bulk. For implantation temperatures above 500 K, the retention is limited by trap creation processes. Above 600 K, the retention drops by two orders of magnitude as compared to the retention at 300 K. With the determined detrapping energies, HIs outgassing at room temperature is predicted. After ions implantation at 300 K, 45% of the initial retention is lost to vacuum in 300 000 s while during this time the remaining trapped HIs diffuse twice as deep into the bulk. - Highlights: • Code development to solve numerically the model equations of diffusion and trapping of hydrogen in metals. • Parametrization of the model trapping parameters (detrapping energies and density): fitting of experimental TDS spectrum. • Confrontation model/experiment: evolution of retention with fluence and implantation temperature. • Investigation of period of rest between implantation and TDS on retention and depth profile.

Fatigue induced changes in conical implant-abutment connections.

Science.gov (United States)

Blum, Kai; Wiest, Wolfram; Fella, Christian; Balles, Andreas; Dittmann, Jonas; Rack, Alexander; Maier, Dominik; Thomann, Ralf; Spies, Benedikt Christopher; Kohal, Ralf Joachim; Zabler, Simon; Nelson, Katja

2015-11-01

Based on the current lack of data and understanding of the wear behavior of dental two-piece implants, this study aims for evaluating the microgap formation and wear pattern of different implants in the course of cyclic loading. Several implant systems with different conical implant-abutment interfaces were purchased. The implants were first evaluated using synchrotron X-ray high-resolution radiography (SRX) and scanning electron microscopy (SEM). The implant-abutment assemblies were then subjected to cyclic loading at 98N and their microgap was evaluated after 100,000, 200,000 and 1 million cycles using SRX, synchrotron micro-tomography (μCT). Wear mechanisms of the implant-abutment connection (IAC) after 200,000 cycles and 1 million cycles were further characterized using SEM. All implants exhibit a microgap between the implant and abutment prior to loading. The gap size increased with cyclic loading with its changes being significantly higher within the first 200,000 cycles. Wear was seen in all implants regardless of their interface design. The wear pattern comprised adhesive wear and fretting. Wear behavior changed when a different mounting medium was used (brass vs. polymer). A micromotion of the abutment during cyclic loading can induce wear and wear particles in conical dental implant systems. This feature accompanied with the formation of a microgap at the IAC is highly relevant for the longevity of the implants. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Atomic adsorption on graphene with a single vacancy: systematic DFT study through the periodic table of elements

Science.gov (United States)

Pašti, Igor A.; Jovanović, Aleksandar; Dobrota, Ana S.; Mentus, Slavko V.; Johansson, Börje; Skorodumova, Natalia V.

Vacancies in graphene present sites of altered chemical reactivity and open possibilities to tune graphene properties by defect engineering. The understanding of chemical reactivity of such defects is essential for successful implementation of carbon materials in advanced technologies. We report the results of a systematic DFT study of atomic adsorption on graphene with a single vacancy for the elements of rows 1 to 6 of the Periodic Table of Elements (PTE), excluding lanthanides. The calculations have been performed using PBE, long-range dispersion interaction-corrected PBE (PBE+D2 and PBE+D3) and non-local vdW-DF2 functional. We find that most elements strongly bind to the vacancy, except for the elements of groups 11 and 12, and noble gases, for which the contribution of dispersion interaction to bonding is most significant. The strength of the interaction with the vacancy correlates with the cohesive energy of the elements in their stable phases: the higher the cohesive energy is the stronger bonding to the vacancy can be expected. As most atoms can be trapped at the SV site we have calculated the potentials of dissolution and found that in most cases the metals adsorbed at the vacancy are more "noble" than they are in their corresponding stable phases.

Pressure response of vacancy ordered maghemite ({gamma}-Fe{sub 2}O{sub 3}) and high pressure transformed hematite ({alpha}-Fe{sub 2}O{sub 3})

Energy Technology Data Exchange (ETDEWEB)

Hearne, Giovanni, E-mail: grhearne@uj.ac.za [Department of Physics, University of Johannesburg, PO Box 524, Auckland Park, 2006 Johannesburg (South Africa); Pischedda, Vittoria, E-mail: Vittoria.Pischedda@univ-lyon1.fr [Laboratoire de Physique de la Matiere Condensee et Nanostructures, University Lyon 1 and CNRS, 69622 Villeurbanne Cedex (France)

2012-03-15

Combined XRD and Moessbauer effect spectroscopy studies to high pressures of {approx}30 GPa of vacancy ordered maghemite are presented. The vacancy ordered superstructure is robust and remains intact up to the pressure-induced onset transition to hematite at 13-16 GPa. The pressure transformed hematite is shown to be crystallographically textured, unlike the randomised low pressure maghemite phase. This arises out of a pressure or stress instigated topotactic transformation of the cubic-spinel to hexagonal-corundum structure. The textured sample permits us to obtain information on the spin reorientation behavior of the pressure transformed hematite in compression and decompression sequences. Spin reorientation is restricted to {approx}15 Degree-Sign over wide pressure ranges, attributable to the effect of entrapped vacancies in the high pressure structure. Thus there are structural and magnetic peculiarities specific to pressure transformed hematite not evident in pressurized hematite starting material. These are triggered by the maghemite{yields}hematite transformation. - Graphical abstract: Pressure instigated topotactic transformation of vacancy ordered {gamma}-Fe{sub 2}O{sub 3}{yields}{alpha}-Fe{sub 2}O{sub 3}. There is restricted spin (B{sub hf}) reorientation in the new pressure transformed hematite due to entrapped vacancies. The change in direction of V{sub zz} signifies a distortion of the FeO{sub 6} octahedral local environment. Highlights: Black-Right-Pointing-Pointer Robust vacancy ordered superstructure in maghemite to high pressures. Black-Right-Pointing-Pointer Pressure instigated topotactic transformation to hematite and subsequent texture. Black-Right-Pointing-Pointer Defect trapping in the pressure transformed hematite. Black-Right-Pointing-Pointer Entrapped defects restricts spin reorientation in pressure transformed hematite. Black-Right-Pointing-Pointer Contrasting behavior with pressurized hematite starting material.

Irreversible traps, their influence on the embrittlement of high strength steel

International Nuclear Information System (INIS)

Mariano, I; Mansilla, G

2012-01-01

Hydrogen (H) can be trapped in lattice defects such as vacancies, dislocations, grain boundaries and interfaces between the matrix and precipitates. The effect on the mechanical properties depends on factors inherent in materials such as the activation energy of irreversible traps (H trapped in Network Places) and its sensitivity to embrittlement. Differential scanning calorimetry (DSC) allows the study of those processes in which enthalpy variation occurs. The purpose is to record the difference in enthalpy change that occurs in the sample as a function of temperature or time. This work represents a study of H embrittlement of high strength steel resulfurized

Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance

OpenAIRE

Amoroso, Salvatore Maria; Georgiev, Vihar P.; Gerrer, Louis; Towie, Ewan; Wang, Xingsheng; Riddet, Craig; Brown, Andrew Robert; Asenov, Asen

2014-01-01

In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-dif...

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

Science.gov (United States)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

Radiation-damage recovery in undoped and oxidized Li doped Mg O crystals implanted with lithium ions

Energy Technology Data Exchange (ETDEWEB)

Alves, E. E-mail: ealves@itn.pt; Silva, R.C. da; Pinto, J.V.; Monteiro, T.; Savoini, B.; Caceres, D.; Gonzalez, R.; Chen, Y

2003-05-01

Undoped MgO and oxidized Li-doped MgO single crystals were implanted with 1 x 10{sup 17} Li{sup +}/cm{sup 2} at 175 keV. The Rutherford backscattering spectrometry (RBS)/channeling data obtained after implantation shows that damage was produced throughout the entire range of the implanted ions. Optical absorption measurements indicate that after implantation the most intense band occurs at {approx}5.0 eV, which has been associated with anion vacancies. After annealing at 450 K the intensity of the oxygen-vacancy band decreases monotonically with temperature and completely disappears at 950 K. A broad extinction band centered at {approx}2.14 eV associated with lithium precipitates emerges gradually and anneals out at 1250 K. RBS/channeling shows that recovery of the implantation damage is completed after annealing the oxidized samples at 1250 K.

The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO{sub 3}(0 0 1)

Energy Technology Data Exchange (ETDEWEB)

Suwanwong, S. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Program in General Science Teaching, Faculty of Education, Vongchavalitkul University, Nakhon Ratchasima 30000 (Thailand); Eknapakul, T. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Rattanachai, Y. [Department of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Nakhon Ratchasima 30000 (Thailand); Masingboon, C. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Faculty of Science and Engineering, Kasetsart University, Chalermphrakiat Sakon Nakhon Province Campus, Sakon Nakhon 47000 (Thailand); Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H. [Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand); King, P.D.C. [SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS (United Kingdom); Hodak, S.K. [Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Meevasana, W., E-mail: worawat@g.sut.ac.th [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Thailand Center of Excellence in Physics, CHE, Bangkok 10400 (Thailand)

2015-11-15

Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO{sub 3} is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO{sub 3}(0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO{sub 3} surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

Effect of single vacancy on the structural, electronic structure and magnetic properties of monolayer graphyne by first-principles

Energy Technology Data Exchange (ETDEWEB)

Yun, Jiangni, E-mail: niniyun@nwu.edu.cn; Zhang, Yanni; Xu, Manzhang; Wang, Keyun; Zhang, Zhiyong

2016-10-01

The effect of single vacancy on the structural, electronic and magnetic properties of monolayer graphyne is investigated by the first-principles calculations. The calculated results reveal that single vacancy can result in the spin polarization in monolayer graphyne and the spin polarization is sensitive to local geometric structure of the vacancy. In the case of monolayer graphyne with one single vacancy at the sp{sup 2} hybridized C site, the vacancy introduces rather weakly spin-polarized, flat bands in the band gap. Due to the localization nature of the defect-induced bands, the magnetic moment is mainly localized at the vacancy site. As for the monolayer graphyne with one single vacancy at the sp hybridized C site, one defect-induced state which is highly split appears in the band gap. The spin-up band of the defect-induced state is highly dispersive and shows considerable delocalization, suggesting that the magnetic moment is dispersed around the vacancy site. The above magnetization in monolayer graphyne with one single vacancy is possibly explained in terms of the valence-bond theory. - Graphical abstract: Calculated band structure of the monolayer graphyne without (a) and with one single vacancy at Vb site (b) and at Vr site(c), respectively. Blue and red lines represent the spin-up and spin-down bands, respectively. For the sake of clarity, the band structure near the Fermi energy is also presented on the right panel. The Fermi level is set to zero on the energy scale. - Highlights: • A Jahn-Teller distortion occurs in monolayer graphyne with single vacancy. • The spin polarization is sensitive to local geometric structure of the vacancy. • Vacancy lying at sp{sup 2} hybridized C site introduces weakly spin-polarized defect bands. • A strong spin splitting occurs when the vacancy lies at sp hybridized C site. • The magnetization is explained in terms of the valence-bond theory.

A Case of Cochlear Implantation in Bromate-Induced Bilateral Sudden Deafness.

Science.gov (United States)

Eom, Tae-Ho; Lee, Sungsu; Cho, Hyong-Ho; Cho, Yong-Beom

2015-04-01

Despite the well-established nature of bromate-induced ototoxicity, cochlear implantation after bromate intoxication has been rarely documented. We hereby present a case of a 51-year-old female deafened completely after bromate ingestion. Her hearing was not restored by systemic steroid treatment and hearing aids were of no use. A cochlear implantation was performed on her right ear 3 months after the bromate ingestion. In bromate intoxication cases, early monitoring of hearing level is necessary and other drugs with potential ototoxicity should be avoided. The outcome of cochlear implantation was excellent in this case of bromate-induced deafness.

Electronic structure of vacancies and vacancy clusters in simple metals

International Nuclear Information System (INIS)

Manninen, M.; Nieminen, R.M.

1978-05-01

The self-consistent density functional approach has been applied in a study of electronic properties of vacancies and vacancy clusters in simple metals. The electron density profiles and potentials have been obtained for spherical voids of varying size. The formation energies and residual resistivities have been calculated for vacancies using both perturbational and variational inclusion of discrete lattice effects. The relation of the void properties to the plane surface ones is studied, and the inadequacy of the jellium-based methods to high-index faces is demonstrated. (author)

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

Science.gov (United States)

Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

2018-04-01

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Implantation of silicon dioxide-based nanocrystalline hydroxyapatite and pure phase beta-tricalciumphosphate bone substitute granules in caprine muscle tissue does not induce new bone formation

Directory of Open Access Journals (Sweden)

Ghanaati Shahram

2013-01-01

Full Text Available Abstract Background Osteoinductive bone substitutes are defined by their ability to induce new bone formation even at heterotopic implantation sites. The present study was designed to analyze the potential osteoinductivity of two different bone substitute materials in caprine muscle tissue. Materials and methods One gram each of either a porous beta-tricalcium phosphate (β-TCP or an hydroxyapatite/silicon dioxide (HA/SiO2-based nanocrystalline bone substitute material was implanted in several muscle pouches of goats. The biomaterials were explanted at 29, 91 and 181 days after implantation. Conventional histology and special histochemical stains were performed to detect osteoblast precursor cells as well as mineralized and unmineralized bone matrix. Results Both materials underwent cellular degradation in which tartrate-resistant acid phosphatase (TRAP-positive osteoclast-like cells and TRAP-negative multinucleated giant cells were involved. The ß-TCP was completely resorbed within the observation period, whereas some granules of the HA-groups were still detectable after 180 days. Neither osteoblasts, osteoblast precursor cells nor extracellular bone matrix were found within the implantation bed of any of the analyzed biomaterials at any of the observed time points. Conclusions This study showed that ß-TCP underwent a faster degradation than the HA-based material. The lack of osteoinductivity for both materials might be due to their granular shape, as osteoinductivity in goat muscle has been mainly attributed to cylindrical or disc-shaped bone substitute materials. This hypothesis however requires further investigation to systematically analyze various materials with comparable characteristics in the same experimental setting.

Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2007-05-02

We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

Gold fillings unravel the vacancy role in the phase transition of GeTe

Science.gov (United States)

Feng, Jinlong; Xu, Meng; Wang, Xiaojie; Lin, Qi; Cheng, Xiaomin; Xu, Ming; Tong, Hao; Miao, Xiangshui

2018-02-01

Phase change memory (PCM) is an important candidate for future memory devices. The crystalline phase of PCM materials contains abundant intrinsic vacancies, which plays an important role in the rapid phase transition upon memory switching. However, few experimental efforts have been invested to study these invisible entities. In this work, Au dopants are alloyed into the crystalline GeTe to fill the intrinsic Ge vacancies so that the role of these vacancies in the amorphization of GeTe can be indirectly studied. As a result, the reduction of Ge vacancies induced by Au dopants hampers the amorphization of GeTe as the activation energy of this process becomes higher. This is because the vacancy-interrupted lattice can be "repaired" by Au dopants with the recovery of bond connectivity. Our results demonstrate the importance of vacancies in the phase transition of chalcogenides, and we employ the percolation theory to explain the impact of these intrinsic defects on this vacancy-ridden crystal quantitatively. Specifically, the threshold of amorphization increases with the decrease in vacancies. The understanding of the vacancy effect sheds light on the long-standing puzzle of the mechanism of ultra-fast phase transition in PCMs. It also paves the way for designing low-power-consumption electronic devices by reducing the threshold of amorphization in chalcogenides.

Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

KAUST Repository

Upadhyay Kahaly, M.

2011-09-20

We study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.

Ion implantation induced nanotopography on titanium and bone cell adhesion

Energy Technology Data Exchange (ETDEWEB)

Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

2014-08-15

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Ion implantation induced nanotopography on titanium and bone cell adhesion

International Nuclear Information System (INIS)

Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; Maeztu, Miguel Ángel de

2014-01-01

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm 2 ) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Photoionization of radiation-induced traps in quartz and alkali feldspars.

Science.gov (United States)

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Photoionization of radiation-induced traps in quartz and alkali feldspars

International Nuclear Information System (INIS)

Huett, G.; Jaek, I.; Vasilchenko, V.

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction

Photoionization of radiation-induced traps in quartz and alkali feldspars

Energy Technology Data Exchange (ETDEWEB)

Huett, G. E-mail: hutt@pdos.gi.ee; Jaek, I.; Vasilchenko, V

2001-01-15

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

International Nuclear Information System (INIS)

Almokhtar, Mohamed; Emura, Shuichi; Koide, Akihiro; Fujikawa, Takashi; Asahi, Hajime

2015-01-01

Highlights: • We grew Gd-doped GaN multi-quantum wells (MQWs) with quantum layer thickness of one nm by MBE. • The X-ray absorption near edge structure spectra observed at Gd LIII-edge indicate a nitrogen vacancy adjacent to Gd substituting the Ga ion in Gd-doped GaN MQW. • The photoluminescence of the samples is discussed considering the formation of a Gd 3+ :Nitrogen-vacancy complex. • A model is presented considering exciton-polaron formation trapped in defect sites around the Gd 3+ :N-vacancy complex in Gd-doped GaN MQWs. - Abstract: The photoluminescence of Gd-doped GaN multi-quantum wells (MQWs) is presented and discussed considering the formation of a Gd 3+ :Nitrogen-vacancy (N-vacancy) complex. A lower energy photoluminescence peak was observed for the Gd-doped GaN MQW sample with respect to the main peak assigned to a neutral donor bound exciton (D 0 X) of the undoped GaN MQW sample. The X-ray absorption near edge structure spectrum observed at Gd L III -edge indicates a nitrogen vacancy adjacent to the Gd substituting the Ga ion in Gd-doped GaN MQW sample. Local stresses around the Gd dopants in Gd-doped GaN matrix generated due to the larger diameter of the Gd 3+ ion with respect to the Ga 3+ ion can be relieved by the creation of vacancies. The lower formation energy of N-vacancies in GaN matrix introduce them as a preferred candidate to relieve the generated stresses. A Gd 3+ :N-vacancy complex consisting of a Gd 3+ ion and the created nitrogen vacancy adjacent to the Gd 3+ dopant is likely to form in GaN:Gd matrix. The lower photoluminescence peak energy observed in the Gd-doped GaN MQW sample is assigned to the recombination of an exciton captured at the Gd 3+ :N-vacancy complex forming a small polaron-like state. A model is presented considering the small exciton-polaron population in defect sites captured around the Gd 3+ ions in the Gd-doped GaN

Tritium trapping states induced by lithium-depletion in Li{sub 2}TiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Makoto, E-mail: kobayashi.makoto@LHD.nifs.ac.jp [National Institute for Fusion Science (Japan); Oya, Yasuhisa; Okuno, Kenji [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan)

2017-04-15

Identifications of tritium trapping states in neutron-irradiated Li{sub 1.8}TiO{sub 2.9} (lithium-depleted Li{sub 2}TiO{sub 3}) were carried out by the out-of-pile tritium release behavior. Tritium release behaviors for neutron-irradiated Li{sub 2}TiO{sub 3} and tritium gas-exposed TiO{sub 2} were also measured for comparison. Among the tritium release spectra for these samples, three tritium release peaks were appeared. By the kinetic analyses of tritium release behaviors, the Arrhenius parameters for three peaks were evaluated. Especially for Li{sub 1.8}TiO{sub 2.9}, there were two tritium release peaks, and the peak in lower temperature region was assigned to the tritium release controlled by the diffusion process in Li{sub 2}TiO{sub 3} structure. The other tritium release peak, which was hardly appeared for Li{sub 2}TiO{sub 3}, was assigned to the release of tritium trapped as hydroxyl groups in Li{sub 1.8}TiO{sub 2.9}, indicating that lithium-depletion would result in the formation of hydroxyl groups in Li{sub 2}TiO{sub 3}. Lithium vacancies existed in Li{sub 2}TiO{sub 3} crystal structure would promote the tritium trapping as hydroxyl groups due to the decreased charge repulsion between lithium ions and tritium ion, resulting in the difficulty of recovering tritium from Li{sub 2}TiO{sub 3} effectively.

Contribution to implanted silicon layers and their annealing

International Nuclear Information System (INIS)

Combasson, J.-L.

1976-01-01

Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

Lattice site occupation of insoluble impurity atoms in aluminium after implantation and irradiation

International Nuclear Information System (INIS)

Kloska, M.K.

1987-03-01

Several elements, whose atoms are oversized and insoluble in aluminium, were implanted in aluminium single crystals at different temperatures. The substitutional fraction and the lattice site location were determined using the ion-channeling technique. The substitutional fractions obtained by in situ analyses are strongly dependent on the implantation temperature. At implantation and analysis temperatures below the temperature of stage III the substitutional fraction is significant larger than at temperatures above. With increasing heat of solution the substitutional fraction decreases for all implantation temperatures. The nonsubstitutional component consists of impurity atom-vacancy complexes. These complexes are formed in the cooling phase of the cascade. At temperatures above the temperature of stage III additional free mobile vacancies were captured by the impurity atoms. The capture radius is correlated with the heat of solution and the size mismatch energy. The results constitute for the first time an experimental confirmation of molecular dynamics calculations of cascade evolution. (orig./BHO)

Abnormal bone formation induced by implantation of osteosarcoma-derived bone-inducing substance in the X-linked hypophosphatemic mouse

International Nuclear Information System (INIS)

Yoshikawa, H.; Masuhara, K.; Takaoka, K.; Ono, K.; Tanaka, H.; Seino, Y.

1985-01-01

The X-linked hypophosphatemic mouse (Hyp) has been proposed as a model for the human familial hypophosphatemia (the most common form of vitamin D-resistant rickets). An osteosarcoma-derived bone-inducing substance was subcutaneously implanted into the Hyp mouse. The implant was consistently replaced by cartilage tissue at 2 weeks after implantation. The cartilage matrix seemed to be normal, according to the histological examination, and 35sulphur ( 35 S) uptake was also normal. Up to 4 weeks after implantation the cartilage matrix was completely replaced by unmineralized bone matrix and hematopoietic bone marrow. Osteoid tissue arising from the implantation of bone inducing substance in the Hyp mouse showed no radiologic or histologic sign of calcification. These findings suggest that the abnormalities of endochondral ossification in the Hyp mouse might be characterized by the failure of mineralization in cartilage and bone matrix. Analysis of the effects of bone-inducing substance on the Hyp mouse may help to give greater insight into the mechanism and treatment of human familial hypophosphatemia

CysLT2 receptor activation is involved in LTC4-induced lung air-trapping in guinea pigs.

Science.gov (United States)

Sekioka, Tomohiko; Kadode, Michiaki; Yonetomi, Yasuo; Kamiya, Akihiro; Fujita, Manabu; Nabe, Takeshi; Kawabata, Kazuhito

2017-01-05

CysLT 1 receptors are known to be involved in the pathogenesis of asthma. However, the functional roles of CysLT 2 receptors in this condition have not been determined. The purpose of this study is to develop an experimental model of CysLT 2 receptor-mediated LTC 4 -induced lung air-trapping in guinea pigs and use this model to clarify the mechanism underlying response to such trapping. Because LTC 4 is rapidly converted to LTD 4 by γ-glutamyltranspeptidase (γ-GTP) under physiological conditions, S-hexyl GSH was used as a γ-GTP inhibitor. In anesthetized artificially ventilated guinea pigs with no S-hexyl GSH treatment, i.v. LTC 4 -induced bronchoconstriction was almost completely inhibited by montelukast, a CysLT 1 receptor antagonist, but not by BayCysLT 2 RA, a CysLT 2 receptor antagonist. The inhibitory effect of montelukast was diminished by treatment with S-hexyl GSH, whereas the effect of BayCysLT 2 RA was enhanced with increasing dose of S-hexyl GSH. Macroscopic and histological examination of lung tissue isolated from LTC 4 -/S-hexyl-GSH-treated guinea pigs revealed air-trapping expansion, particularly at the alveolar site. Inhaled LTC 4 in conscious guinea pigs treated with S-hexyl GSH increased both airway resistance and airway hyperinflation. On the other hand, LTC 4 -induced air-trapping was only partially suppressed by treatment with the bronchodilator salmeterol. Although montelukast inhibition of LTC 4 -induced air-trapping was weak, treatment with BayCysLT 2 RA resulted in complete suppression of this air-trapping. Furthermore, BayCysLT 2 RA completely suppressed LTC 4 -induced airway vascular hyperpermeability. In conclusion, we found in this study that CysLT 2 receptors mediate LTC 4 -induced bronchoconstriction and air-trapping in S-hexyl GSH-treated guinea pigs. It is therefore believed that CysLT 2 receptors contribute to asthmatic response involving air-trapping. Copyright © 2016 Elsevier B.V. All rights reserved.

The influence of ion implantation on the oxidation of nickel

International Nuclear Information System (INIS)

Goode, P.D.

1975-11-01

The effects of ion implantation on the oxidation of polycrystalline nickel have been studied for a range of implanted species: viz. He, Li, Ne, Ca, Ti, Ni, Co, Xe, Ce and Bi. The oxides were grown in dry oxygen at 630 0 C and the 16 O(d,p) 17 O nuclear reaction technique used to determine the amount of oxygen taken up. The influence of atomic and ionic size, valency and electronegativity of the implanted impurities was studied as also were the effects of ion bombardment damage and the influence of sputtering during implantation. Atomic size and the annealing of disorder were found to have a marked influence on oxide growth rate. The dependence of oxidation on annealing was further studied by implanting polycrystalline specimens with self ions and observing the oxide growth rate as a function of annealing temperature. A peak in the curve was found at 400 0 C and a similar peak observed at a somewhat higher temperature for oxidised single crystals. It is concluded that the oxidation rate will be influenced by those factors which alter the epitaxial relationship between metal and growing oxide. Such factors include atomic size of the implanted species, surface strain induced by implantation and changes in surface topography as a result of sputtering. In addition a model based on vacancy assisted cation migration is proposed to explain enhanced oxidation observed over a limited temperature range. (author)

Motion Control and Optical Interrogation of a Levitating Single Nitrogen Vacancy in Vacuum.

Science.gov (United States)

Conangla, Gerard P; Schell, Andreas W; Rica, Raúl A; Quidant, Romain

2018-05-24

Levitation optomechanics exploits the unique mechanical properties of trapped nano-objects in vacuum to address some of the limitations of clamped nanomechanical resonators. In particular, its performance is foreseen to contribute to a better understanding of quantum decoherence at the mesoscopic scale as well as to lead to novel ultrasensitive sensing schemes. While most efforts have focused so far on the optical trapping of low-absorption silica particles, further opportunities arise from levitating objects with internal degrees of freedom, such as color centers. Nevertheless, inefficient heat dissipation at low pressures poses a challenge because most nano-objects, even with low-absorption materials, experience photodamage in an optical trap. Here, by using a Paul trap, we demonstrate levitation in vacuum and center-of-mass feedback cooling of a nanodiamond hosting a single nitrogen-vacancy center. The achieved level of motion control enables us to optically interrogate and characterize the emitter response. The developed platform is applicable to a wide range of other nano-objects and represents a promising step toward coupling internal and external degrees of freedom.

Defects related room temperature ferromagnetism in Cu-implanted ZnO nanorod arrays

International Nuclear Information System (INIS)

Li, D.; Li, D.K.; Wu, H.Z.; Liang, F.; Xie, W.; Zou, C.W.; Shao, L.X.

2014-01-01

Highlights: • Room temperature ferromagnetism was observed in Cu-implanted ZnO nanorod arrays. • Cu-implanted ZnO nanorods show a saturation magnetization value of 1.82 μ B /Cu. • The origin of ferromagnetism can be explained by the defects related bound magnetic polarons. -- Abstract: Room temperature ferromagnetism (FM) was observed in Cu-implanted ZnO nanorod arrays. The implantation dose for Cu ions was 1 × 10 16 cm −2 and the implantation energy was 100 keV. The ion implantation induced defects and disorder has been observed by the XRD, PL and TEM experiments. The PL spectrum revealed a dominant luminescence peaks at 390 nm and a broad and strong green emission at 500–700 nm, which is considered to be related to the ionized oxygen vacancy. Cu-implanted ZnO nanorods annealed at 500 °C show a saturation magnetization value of 1.82 μ B /Cu and a positive coercive field of 68 Oe. The carrier concentration is not much improved after annealing and in the order of 10 16 cm −3 , which suggests that FM does not depend upon the presence of a significant carrier concentration. The origin of ferromagnetism behavior can be explained on the basis of electrons and defects that form bound magnetic polarons, which overlap to create a spin-split impurity band

Vacancy formation enthalpies in bcc and fcc FeCo by positron annihilation

International Nuclear Information System (INIS)

Jackman, J.A.; Kim, S.M.; Buyers, W.J.L.

1982-01-01

A long slit angular correlation apparatus was used to measure the peak coincidence count rate in stoichiometric FeCo from 290 K to 1510 K. The count rate did not change significantly at the order-disorder phase transition (1008 K), but decreased sharply by 3.2% at the bcc-fcc phase transition at 1258 K. The threshold temperatures for the trapping of positrons in vacancies are measured to be 1125 K for the bcc phase and 1260 K for the fcc phase. The vacancy formation enthalpies in the bcc and fcc phases are determined to be 1.45 +- 0.05 eV and 1.63 +- 0.05 eV. The activation energies for self-diffusion have been estimated from the threshold temperatures, and are found to be 2.45 eV and 2.74 eV for the bcc and fcc phases respectively. (Auth.)

Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrode

International Nuclear Information System (INIS)

Wada, M.; Nakano, J.; Yanagawa, F.

1985-01-01

It is observed that strong rf sputtering of the Pb-alloy base electrodes causes the junctions to trap magnetic vortices and thus induces Josephson current (I/sub J/) suppression. Trapping begins to occur when the rf sputtering that removes the native thermal oxide on the base electrode is carried out prior to rf plasma oxidation. Observed large I/sub J/ suppression is presumably induced by the concentration of vortices into the sputtered area upon cooling the sample below the transition temperature. This suggests a new method of the circumvention of the vortex trapping by strongly rf sputtering the areas of the electrode other than the junction areas

Development of Laser-Induced Fluorescence Diagnostic for the Paul Trap Simulator Experiment

CERN Document Server

Chung, Moses; Efthimion, Philip; Gilson, Erik P; Majeski, Richard; Startsev, Edward

2005-01-01

The Paul Trap Simulator Experiment (PTSX) is a cylindrical Paul trap whose purpose is to simulate the nonlinear dynamics of intense charged particle beam propagation in alternating-gradient magnetic transport systems. For the in-situ measurement of the transverse ion density profile in the PTSX device, which is essential for the study of beam mismatch and halo particle production, a laser-induced fluorescence diagnostic system is being developed. Instead of cesium, which has been used in the initial phase of the PTSX experiment, barium has been selected as the preferred ion for the laser-induced fluorescence diagnostic. The installation of the barium ion source and the characterization of the tunable dye laser system are discussed. The design of the collection optics with an intensified CCD camera system is also discussed. Finally, initial test results using the laser-induced fluorescence diagnostic will be presented.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

Energy Technology Data Exchange (ETDEWEB)

Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

Spontaneous progression of ligature induced peri-implantitis at implants with different surface roughness: an experimental study in dogs

DEFF Research Database (Denmark)

Berglundh, T; Gotfredsen, K; Zitzmann, N U

2007-01-01

: The aim of the current experiment was to study the progression of peri-implantitis around implants with different surface roughness. MATERIAL AND METHODS: In five beagle dogs, three implants with either a sandblasted acid-etched surface (SLA) or a polished surface (P) were installed bilaterally......BACKGROUND: Peri-implantitis is associated with the presence of submarginal plaque, soft-tissue inflammation and advanced breakdown of the supporting bone. The progression of peri-implantitis following varying periods of continuing plaque accumulation has been studied in animal models. OBJECTIVE...... in the edentulous premolar regions. After 3 months on a plaque control regimen, experimental peri-implantitis was induced by ligature placement and plaque accumulation was allowed to progress until about 40% of the height of the supporting bone had been lost. After this 4-month period, ligatures were removed...

EPR study of electron traps in x-ray-irradiated yttria-stabilized zirconia

International Nuclear Information System (INIS)

Azzoni, C.B.; Paleari, A.

1989-01-01

Single crystals of yttria-stabilized zirconia (12 mol % of Y 2 O 3 ) have been x-ray irradiated at room temperature. The electron paramagnetic resonance spectrum of the filled electron traps is analyzed in terms of a single oxygen vacancy type of defect with its symmetry axis along the left-angle 111 right-angle direction. The angular dependence of the linewidth and the asymmetry of the line shape are attributed to the disordered rearrangements of the anion sublattice surrounding the oxygen vacancy. This affects the local crystal fields and the directions of the symmetry axis of the defects

EPR study of electron traps in x-ray-irradiated yttria-stabilized zirconia

Energy Technology Data Exchange (ETDEWEB)

Azzoni, C.B.; Paleari, A. (Dipartimento di Fisica, Alessandro Volta dell' Universita di Pavia, via Bassi 6, 27100 Pavia, Italy (IT))

1989-10-01

Single crystals of yttria-stabilized zirconia (12 mol % of Y{sub 2}O{sub 3}) have been x-ray irradiated at room temperature. The electron paramagnetic resonance spectrum of the filled electron traps is analyzed in terms of a single oxygen vacancy type of defect with its symmetry axis along the {l angle}111{r angle} direction. The angular dependence of the linewidth and the asymmetry of the line shape are attributed to the disordered rearrangements of the anion sublattice surrounding the oxygen vacancy. This affects the local crystal fields and the directions of the symmetry axis of the defects.

Correlation between defect and magnetism of low energy Ar+9 implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

International Nuclear Information System (INIS)

Neogi, S.K.; Midya, N.; Pramanik, P.; Banerjee, A.; Bhattacharyya, A.; Taki, G.S.; Krishna, J.B.M.; Bandyopadhyay, S.

2016-01-01

The structural, morphological, optical and magnetic properties of Ar +9 implanted 5 at% Mn doped ZnO films have been investigated to detect the correlation between ferromagnetism (FM) and defect. Sol–gel derived films were implanted with fluences 0 (un-implanted), 5×10 14 (low), 10 15 (intermediate) and 10 16 (high) ions/cm 2 . Rutherford back scattering (RBS), X-ray diffraction (XRD), atomic force microscope (AFM) and magnetic force microscope (MFM), UV–visible, photoluminescence and X-ray absorption spectroscopy (XAS) and superconducting quantum interference device vibrating sample magnetometer (SQUID VSM) were employed for investigation. XRD indicated single phase nature of the films. Absence of impurity phase has been confirmed from several other measurements also. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit intrinsic FM at room temperature (RT). The magnetization attains the maximum for the film implanted with fluence 10 16 ions/cm 2 with saturation magnetization (M S ) value 0.69 emu/gm at RT. Magnetic properties of the films were interpreted using bound magnetic polaron (BMP). BMP generated from the intrinsic exchange interaction of Mn 2+ ions and V Zn related defects actually controls the FM. The practical utility of these films in transparent spin electronic device has also been exhibited. - Highlights: • Synthesis of transparent 5 at% Mn doped ZnO films was done by sol-gel technique. • Defect induced intrinsic ferromagnetism was observed for Ar 9+ ion implanted films. • The maximum magnetization was attained for highest dose of Ar 9+ implantation. • Zn vacancy may favors intrinsic ferromagnetic ordering. • Intrinsic ferromagnetism was interpreted in terms of bound magnetic polaron model.

Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

Science.gov (United States)

Jelenković, Emil V.; To, Suet

2017-09-01

In this paper the effect of hydrogen implantation in silicon on nanoindentation-induced phase transformation is investigated. Hydrogen ions were implanted in silicon through 300 nm thick oxide with double energy implantation (75 and 40 keV). For both energies implantation dose was 4 × 1016 cm-2. Some samples were thermally annealed at 400 °C. The micro-Raman spectroscopy was applied on nanoindentation imprints and the obtained results were related to the pop out/elbow appearances in nanoindentatioin unloading-displacement curves. The Raman spectroscopy revealed a suppression of Si-XII and Si-III phases and formation of a-Si in the indents of hydrogen implanted Si. The high-resolution x-ray diffraction measurements were taken to support the analysis of silicon phase formation during nanoindentation. Implantation induced strain, high hydrogen concentration, and platelets generation were found to be the factors that control suppression of c-Si phases Si-XII and Si-III, as well as a-Si phase enhancement during nanoindentation. [Figure not available: see fulltext.

Surface modifications induced by yttrium implantation on low manganese-carbon steel

Energy Technology Data Exchange (ETDEWEB)

Caudron, E.; Buscail, H. [Univ. Blaise Pascal Clermont-Fd II, Le Puy en Velay (France). Lab. Vellave d' Elaboration et d' Etude des Materiaux; Haanapel, V.A.C.; Jacob, Y.P.; Stroosnijder, M.F. [Institute for Health and Consumer Protection, Joint Research Center, The European Commission, 21020, Ispra (Italy)

1999-12-15

Low manganese-carbon steel samples were ion implanted with yttrium. Sample compositions and structures were investigated before and after yttrium implantations to determine the yttrium distribution in the sample. Yttrium implantation effects were characterized using several analytical and structural techniques such as X-ray photoelectron spectroscopy, reflection high energy electron diffraction, X-ray diffraction, glancing angle X-ray diffraction and Rutherford backscattering spectrometry. In this paper it is shown that correlation between composition and structural analyses provides an understanding of the main compounds induced by yttrium implantation in low manganese-carbon steel. (orig.)

DFT study of anisotropy effects on the electronic properties of diamond nanowires with nitrogen-vacancy center.

Science.gov (United States)

Solano, Jesús Ramírez; Baños, Alejandro Trejo; Durán, Álvaro Miranda; Quiroz, Eliel Carvajal; Irisson, Miguel Cruz

2017-09-26

In the development of quantum computing and communications, improvements in materials capable of single photon emission are of great importance. Advances in single photon emission have been achieved experimentally by introducing nitrogen-vacancy (N-V) centers on diamond nanostructures. However, theoretical modeling of the anisotropic effects on the electronic properties of these materials is almost nonexistent. In this study, the electronic band structure and density of states of diamond nanowires with N-V defects were analyzed through first principles approach using the density functional theory and the supercell scheme. The nanowires were modeled on two growth directions [001] and [111]. All surface dangling bonds were passivated with hydrogen (H) atoms. The results show that the N-V introduces multiple trap states within the energy band gap of the diamond nanowire. The energy difference between these states is influenced by the growth direction of the nanowires, which could contribute to the emission of photons with different wavelengths. The presence of these trap states could reduce the recombination rate between the conduction and the valence band, thus favoring the single photon emission. Graphical abstract Diamond nanowires with nitrogen-vacancy centerᅟ.

Temperature dependence of deuterium retention mechanisms in tungsten

Energy Technology Data Exchange (ETDEWEB)

Roszell, J.P. [University of Toronto Institute for Aerospace Studies, 4925 Dufferin Street, Toronto, Ontario, M3H 5T6 (Canada); Davis, J.W., E-mail: jwdavis@starfire.utias.utoronto.ca [University of Toronto Institute for Aerospace Studies, 4925 Dufferin Street, Toronto, Ontario, M3H 5T6 (Canada); Haasz, A.A. [University of Toronto Institute for Aerospace Studies, 4925 Dufferin Street, Toronto, Ontario, M3H 5T6 (Canada)

2012-10-15

The retention of 500 eV D{sup +} was measured as a function of implantation temperature in single- (SCW) and poly-crystalline (PCW) tungsten. The results show a decrease in retention of {approx}2 orders of magnitude over the temperature range of 350-550 K in SCW and a decrease of an order of magnitude over the temperature range of 600-700 K in PCW. Inspection of the TDS spectra showed a shift in peak location from 600 to 800 K as temperature was increased above 350 K in SCW and above 450 K in PCW specimens. TMAP modeling showed that the change in peak location corresponds to a change in trapping energy from 1.3 eV for the 600 K peak to 2.1 eV for the 800 K peak. It is proposed that for implantations performed above 350 K in SCW and 450 K in PCW, deuterium-containing vacancies are able to diffuse and combine to create stable nano-bubbles within the crystal lattice. The formation of nano-bubbles due to the annihilation of deuterium-vacancy complexes results in a change in the trapping energy from 1.3 to 2.1 eV as well as a decrease in retention as some of the deuterium-vacancy complexes will be destroyed at surfaces or grain boundaries, decreasing the number of trapping sites available.

Temperature dependence of deuterium retention mechanisms in tungsten

International Nuclear Information System (INIS)

Roszell, J.P.; Davis, J.W.; Haasz, A.A.

2012-01-01

The retention of 500 eV D + was measured as a function of implantation temperature in single- (SCW) and poly-crystalline (PCW) tungsten. The results show a decrease in retention of ∼2 orders of magnitude over the temperature range of 350–550 K in SCW and a decrease of an order of magnitude over the temperature range of 600–700 K in PCW. Inspection of the TDS spectra showed a shift in peak location from 600 to 800 K as temperature was increased above 350 K in SCW and above 450 K in PCW specimens. TMAP modeling showed that the change in peak location corresponds to a change in trapping energy from 1.3 eV for the 600 K peak to 2.1 eV for the 800 K peak. It is proposed that for implantations performed above 350 K in SCW and 450 K in PCW, deuterium-containing vacancies are able to diffuse and combine to create stable nano-bubbles within the crystal lattice. The formation of nano-bubbles due to the annihilation of deuterium-vacancy complexes results in a change in the trapping energy from 1.3 to 2.1 eV as well as a decrease in retention as some of the deuterium-vacancy complexes will be destroyed at surfaces or grain boundaries, decreasing the number of trapping sites available.

Temperature dependence of deuterium retention mechanisms in tungsten

Science.gov (United States)

Roszell, J. P.; Davis, J. W.; Haasz, A. A.

2012-10-01

The retention of 500 eV D+ was measured as a function of implantation temperature in single- (SCW) and poly-crystalline (PCW) tungsten. The results show a decrease in retention of ˜2 orders of magnitude over the temperature range of 350-550 K in SCW and a decrease of an order of magnitude over the temperature range of 600-700 K in PCW. Inspection of the TDS spectra showed a shift in peak location from 600 to 800 K as temperature was increased above 350 K in SCW and above 450 K in PCW specimens. TMAP modeling showed that the change in peak location corresponds to a change in trapping energy from 1.3 eV for the 600 K peak to 2.1 eV for the 800 K peak. It is proposed that for implantations performed above 350 K in SCW and 450 K in PCW, deuterium-containing vacancies are able to diffuse and combine to create stable nano-bubbles within the crystal lattice. The formation of nano-bubbles due to the annihilation of deuterium-vacancy complexes results in a change in the trapping energy from 1.3 to 2.1 eV as well as a decrease in retention as some of the deuterium-vacancy complexes will be destroyed at surfaces or grain boundaries, decreasing the number of trapping sites available.

Argon defect complexes in low energy Ar irradiated molybdenum

International Nuclear Information System (INIS)

Veen, A. van; Buters, W.T.M.; Kolk, G.J. van der; Caspers, L.M.; Armstrong, T.R.

1982-01-01

Thermal desorption spectrometry has been used to study the defects created in Mo irradiated along the direction with Ar ions ranging in energy from 0.1 to 2 keV. In addition to monitoring the release of the implanted Ar, additional information has been obtained by decoration of the defects with low energy helium and subsequent monitoring of the helium release. The studies show evidence that the Ar can be trapped in both substitutional sites and in a configuration in which the Ar is associated with vacancies (ArVsub(n), n >= 2). Most of the Ar implanted at high energy is released at approx. equal to 1500 K by thermal vacancy assisted diffusion. Argon trapped closer to the surface is released at lower temperatures via at least three different surface related release mechanisms. Additional results are presented on the interaction of self interstitial atoms (introduced by 100 eV Xe bombardment) with the Ar defects. Substitutional Ar is found to convert to interstitial Ar which seems to be mobile at room temperature. The Ar-vacancy complexes are found to be reduced to substitutional Ar. The results of atomistic calculations of the release mechanisms will also be presented. (orig.)

Involvement of hydrogen-vacancy complexes in the baking effect of niobium cavities

Directory of Open Access Journals (Sweden)

B. Visentin

2010-05-01

Full Text Available Baking is necessary to improve high accelerating gradient performances of superconducting niobium cavities. Ten years after this discovery in 1998, the understanding of this effect still resists a lot of theoretical explanations. For the first time, positron annihilation spectroscopy performed on niobium samples reveals the increase after baking of positrons trapped under the Nb surface. Presence of hydrogen-vacancy complexes and their dissociation by baking could both explain rf losses observed at high fields (Q drop and its cure (baking effect.

Scanning probe microscopy of single Au ion implants in Si

International Nuclear Information System (INIS)

Vines, L.; Monakhov, E.; Maknys, K.; Svensson, B.G.; Jensen, J.; Hallen, A.; Kuznetsov, A. Yu.

2006-01-01

We have studied 5 MeV Au 2+ ion implantation with fluences between 7 x 10 7 and 2 x 10 8 cm -2 in Si by deep level transient spectroscopy (DLTS) and scanning capacitance microscopy (SCM). The DLTS measurements show formation of electrically active defects such as the two negative charge states of the divacancy (V 2 (=/-) and V 2 (-/0)) and the vacancy-oxygen (VO) center. It is observed that the intensity of the V 2 (=/-) peak is lower compared to that of V 2 (-/0) by a factor of 5. This has been attributed to a highly localized distribution of the defects along the ion tracks, which results in trapping of the carriers at V 2 (-/0) and incomplete occupancy of V 2 (=/-). The SCM measurements obtained in a plan view show a random pattern of regions with a reduced SCM signal for the samples implanted with fluence above 2 x 10 8 cm -2 . The reduced SCM signal is attributed to extra charges associated with acceptor states, such as V 2 (-/0), formed along the ion tracks in the bulk Si. Indeed, the electron emission rate from the V 2 (-/0) state is in the range of 10 kHz at room temperature, which is well below the probing frequency of the SCM measurements, resulting in 'freezing' of electrons at V 2 (-/0)

Laser-Induced Fluorescence diagnostic of barium ion plasmas in the Paul Trap Simulator Experiment

International Nuclear Information System (INIS)

Chung, Moses; Gilson, Erik P.; Davidson, Ronald C.; Efthimion, Philip C.; Majeski, Richard; Startsev, Edward A.

2005-01-01

The Paul Trap Simulator Experiment (PTSX) is a cylindrical Paul trap whose purpose is to simulate the nonlinear dynamics of intense charged particle beam propagation in alternating-gradient magnetic transport systems. To investigate the ion plasma microstate in PTSX, including the ion density profile and the ion velocity distribution function, a laser-induced fluorescence diagnostic system is being developed as a nondestructive diagnostic. Instead of cesium, which has been used in the initial phase of the PTSX experiment, barium has been selected as the preferred ion for the laser-induced fluorescence diagnostic. A feasibility study of the laser-induced fluorescence diagnostic using barium ions is presented with the characterization of a tunable dye laser. The installation of the barium ion source and the development of the laser-induced fluorescence diagnostic system are also discussed

Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

NARCIS (Netherlands)

Xu, J.Y.; Bronsveld, P.M.; Boom, G.; Hosson, J.Th.M. De

1984-01-01

Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect

Natural defects and defects created by ionic implantation in zinc tellurium

International Nuclear Information System (INIS)

Roche, J.P.; Dupuy, M.; Pfister, J.C.

1977-01-01

Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

Helium trapping in aluminum and sintered aluminum powders

International Nuclear Information System (INIS)

Das, S.K.; Kaminsky, M.; Rossing, T.

1975-01-01

The surface erosion of annealed aluminum and of sintered aluminum powder (SAP) due to blistering from implantation of 100-keV 4 He + ions at room temperature has been investigated. A substantial reduction in the blistering erosion rate in SAP was observed from that in pure annealed aluminum. In order to determine whether the observed reduction in blistering is due to enhanced helium trapping or due to helium released, the implanted helium profiles in annealed aluminum and in SAP have been studied by Rutherford backscattering. The results show that more helium is trapped in SAP than in aluminum for identical irradiation conditions. The observed reduction in erosion from helium blistering in SAP is more likely due to the dispersion of trapped helium at the large Al-Al 2 O 3 interfaces and at the large grain boundaries in SAP than to helium release

Competition of bulk trapping and surface erosion in the kinetics of tritium inventory and permeation in plasma protection metals

International Nuclear Information System (INIS)

Federici, G.; Holland, D.F.; Esser, B.

1996-01-01

A simplified transient model is presented to describe the migration of implanted tritium in the presence of trap sites across the bulk of metallic substrates whose thickness is decreasing with time due to erosion. The subject is relevant for quantifying the tritium inventory in - and permeation through -plasma facing armours in the next generation of D-T fuelled tokamak devices (i.e., the International Thermonuclear Experimental Reactor). This paper describes the equations of the physical model and the main assumptions used to simplify the complex analysis, and surveys the influence of several parameters such as the implantation flux, the erosion rate, the armour temperature, the armour thickness, the density and trapping energy of neutron-induced traps, etc., which are all expected to play a key role in the phenomena investigated. The examples presented to show the applicability of the model include the results of a study performed for beryllium armours exposed to heat and particle loads similar to those expected on the ITER divertor plasma facing components and comparison is made with cases where erosion does not play any role. (orig.)

Evidence for charge-trapping inducing polymorphic structural-phase transition in pentacene.

Science.gov (United States)

Ando, Masahiko; Kehoe, Tom B; Yoneya, Makoto; Ishii, Hiroyuki; Kawasaki, Masahiro; Duffy, Claudia M; Minakata, Takashi; Phillips, Richard T; Sirringhaus, Henning

2015-01-07

Trapped-charge-induced transformation of pentacene polymorphs is observed by using in situ Raman spectroscopy and molecular dynamics simulations reveal that the charge should be localized in pentacene molecules at the interface with static intermolecular disorder along the long axis. Quantum chemical calculations of the intermolecular transfer integrals suggest the disorder to be large enough to induce Anderson-type localization. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanomechanical investigation of ion implanted single crystals - Challenges, possibilities and pitfall traps related to nanoindentation

Science.gov (United States)

Kurpaska, Lukasz

2017-10-01

Nanoindentation technique have developed considerably over last thirty years. Nowadays, commercially available systems offer very precise measurement in nano- and microscale, environmental noise cancelling (or at least noise suppressing), in situ high temperature indentation in controlled atmosphere and vacuum conditions and different additional options, among them dedicated indentation is one of the most popular. Due to its high precision, and ability to measure mechanical properties from very small depths (tens of nm), this technique become quite popular in the nuclear society. It is known that ion implantation (to some extent) can simulate the influence of neutron flux. However, depth of the material damage is very limited resulting in creation of thin layer of modified material over unmodified bulk. Therefore, only very precise technique, offering possibility to control depth of the measurement can be used to study functional properties of the material. For this reason, nanoindentation technique seems to be a perfect tool to investigate mechanical properties of ion implanted specimens. However, conducting correct nanomechanical experiment and extracting valuable mechanical parameters is not an easy task. In this paper a discussion about the nanoindentation tests performed on ion irradiated YSZ single crystal is presented. The goal of this paper is to discuss possible traps when studying mechanical properties of such materials and thin coatings.

Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

International Nuclear Information System (INIS)

Han, Yang; Zhou, Jian; Dong, Jinming

2015-01-01

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

Ordering of vacancies on Si(001)

NARCIS (Netherlands)

Zandvliet, Henricus J.W.

1997-01-01

Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is

Mechanism for suppression of radiation-induced segregation by oversized solute addition in austenitic stainless steel

Science.gov (United States)

Hackett, Micah Jeremiah

The objective of this thesis is to quantify the effect of oversized solutes on radiation-induced segregation in austenitic stainless steels and to determine the mechanism of this effect. Zr or Hf additions to austenitic stainless steels demonstrated a reduction in radiation-induced segregation of Cr and Ni at the grain boundary after proton irradiation at 400°C and 500°C to low doses, but the solute effect disappeared at higher doses. Rate theory modeling of RIS was extended to incorporate a solute-vacancy trapping mechanism to predict the effect of solutes on RIS. The model showed that RIS is most sensitive to the solute-vacancy binding energy. First principles calculations were used to determine a binding energy of 1.08 eV for Zr and 0.71 eV for Hf. Model and experiment agreed in showing suppression of Cr depletion at doses of 3 dpa at 400°C and 1 dpa at 500°C, and experimental results were consistent with the model in showing greater effectiveness of Zr relative to Hf due to a larger binding energy. The dislocation loop microstructure was measured at 400°C, 3 and 7 dpa, and a significant decrease in loop density and total loop line length in the oversized solute alloys relative to the reference alloys. The loop microstructure results were consistent with RIS results by confirming enhanced recombination of point defects by solute-vacancy trapping. Increases in RIS with dose indicated a loss of solute effectiveness, which was consistent with an observed increase in loop line length from 3 to 7 dpa. The loss of solute effectiveness at high dose is attributed to a loss of oversized solute from the matrix due to coarsening of carbide precipitates. X-ray diffraction identified a microstructure with ZrC or HfC precipitates prior to irradiation. Precipitate coarsening was identified as the most likely mechanism for the loss of solute effectiveness on RIS by the following: (1) diffusion analysis suggested significant solute diffusion by the vacancy flux to

Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond

Energy Technology Data Exchange (ETDEWEB)

Fávaro de Oliveira, Felipe; Momenzadeh, S. Ali; Wang, Ya; Denisenko, Andrej, E-mail: a.denisenko@physik.uni-stuttgart.de [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart (Germany); Konuma, Mitsuharu [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Markham, Matthew; Edmonds, Andrew M. [Element Six Innovation, Harwell Oxford, Didcot, Oxfordshire OX11 0QR (United Kingdom); Wrachtrup, Jörg [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart, 70569 Stuttgart (Germany); Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany)

2015-08-17

Near-surface nitrogen-vacancy (NV) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a {sup 12}C isotopically purified diamond revealed a threefold increase in T{sub 2} times for NV centers with <4 nm of depth (measured by nuclear magnetic resonance signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.

Computation of transverse muon-spin relaxation functions including trapping-detrapping reactions, with application to electron-irradiated tantalum

International Nuclear Information System (INIS)

Doering, K.P.; Aurenz, T.; Herlach, D.; Schaefer, H.E.; Arnold, K.P.; Jacobs, W.; Orth, H.; Haas, N.; Seeger, A.; Max-Planck-Institut fuer Metallforschung, Stuttgart

1986-01-01

A new technique for the economical evaluation of transverse muon spin relaxation functions in situations involving μ + trapping at and detrapping from crystal defects is applied to electron-irradiated Ta exhibiting relaxation maxima at about 35 K, 100 K, and 250 K. The long-range μ + diffusion is shown to be limted by traps over the entire temperature range investigated. The (static) relaxation rates for several possible configurations of trapped muons are discussed, including the effect of the simultaneous presence of a proton in a vacancy. (orig.)

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

International Nuclear Information System (INIS)

Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

2011-01-01

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Effects of cigarette smoke on methacholine- and AMP-induced air trapping in asthmatics.

Science.gov (United States)

Prieto, Luis; Palop, Julio; Llusar, Ruth; Herrera, Susana; Perez-Frances, Carmen; Lanuza, Amparo; Aguilar, Daniela

2015-02-01

Abstract Objective: No information is available on the effect of cigarette smoke on bronchoconstrictor-induced air trapping in asthma. The aim of this study was to evaluate the additional influence of smoking on methacholine- and adenosine 5'-monophosphate (AMP)-induced air trapping in subjects with asthma. Airway responsiveness to methacholine and AMP, bronchial (J'awNO) and alveolar (CANO) nitric oxide (NO) and exhaled breath condensate pH were measured in 68 adults (23 current smokers with asthma, 23 non-smokers with asthma and 22 current or former smokers with chronic obstructive pulmonary disease; COPD). The degree of air trapping induced by each bronchoconstrictor agent was expressed by the percent fall in forced vital capacity (FVC) at a 20% fall in forced expiratory volume in 1 s relative to FVC after saline inhalation (ΔFVC%). The ΔFVC% for AMP was higher in both smokers with asthma and patients with COPD than in non-smokers with asthma (p<0.001). By contrast, ΔFVC% for methacholine was similar in the three groups of subjects (p=0.69). In smokers with asthma, but not in the other two groups, there was a correlation between the residual volume/total lung capacity at baseline and the ΔFVC% induced by each bronchoconstrictor agent. Mean values for J'awNO were higher in non-smokers with asthma than in the other two groups (p<0.05). The results of this study suggest that factors underlying bronchoconstriction induced by indirect agonists are different in smokers and non-smokers with asthma. These observations might be clinically relevant, because triggers that frequently induce bronchial obstruction in the real world act by an indirect mechanism.

Correlation between defect and magnetism of low energy Ar{sup +9} implanted and un-implanted Zn{sub 0.95}Mn{sub 0.05}O thin films suitable for electronic application

Energy Technology Data Exchange (ETDEWEB)

Neogi, S.K.; Midya, N. [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Pramanik, P. [Institute of RadioPhysics and Electronics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India); Bhattacharyya, A. [Institute of RadioPhysics and Electronics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Taki, G.S. [Variable Energy Cyclotron Centre, 1/AF, Salt Lake, Kolkata 700064 (India); Krishna, J.B.M. [UGC DAE CSR, Kolkata Centre, LB 8, Sector III, Salt Lake, Kolkata 700098 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 APC Road, Kolkata 700009 (India); CRNN, University of Calcutta, JB Block, Sector III, Salt Lake, Kolkata 700098 (India)

2016-06-15

The structural, morphological, optical and magnetic properties of Ar{sup +9} implanted 5 at% Mn doped ZnO films have been investigated to detect the correlation between ferromagnetism (FM) and defect. Sol–gel derived films were implanted with fluences 0 (un-implanted), 5×10{sup 14} (low), 10{sup 15} (intermediate) and 10{sup 16} (high) ions/cm{sup 2}. Rutherford back scattering (RBS), X-ray diffraction (XRD), atomic force microscope (AFM) and magnetic force microscope (MFM), UV–visible, photoluminescence and X-ray absorption spectroscopy (XAS) and superconducting quantum interference device vibrating sample magnetometer (SQUID VSM) were employed for investigation. XRD indicated single phase nature of the films. Absence of impurity phase has been confirmed from several other measurements also. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit intrinsic FM at room temperature (RT). The magnetization attains the maximum for the film implanted with fluence 10{sup 16} ions/cm{sup 2} with saturation magnetization (M{sub S}) value 0.69 emu/gm at RT. Magnetic properties of the films were interpreted using bound magnetic polaron (BMP). BMP generated from the intrinsic exchange interaction of Mn{sup 2+} ions and V{sub Zn} related defects actually controls the FM. The practical utility of these films in transparent spin electronic device has also been exhibited. - Highlights: • Synthesis of transparent 5 at% Mn doped ZnO films was done by sol-gel technique. • Defect induced intrinsic ferromagnetism was observed for Ar{sup 9+} ion implanted films. • The maximum magnetization was attained for highest dose of Ar{sup 9+} implantation. • Zn vacancy may favors intrinsic ferromagnetic ordering. • Intrinsic ferromagnetism was interpreted in terms of bound magnetic polaron model.

Cobalt-alloy implant debris induce HIF-1α hypoxia associated responses: a mechanism for metal-specific orthopedic implant failure.

Directory of Open Access Journals (Sweden)

Lauryn Samelko

Full Text Available The historical success of orthopedic implants has been recently tempered by unexpected pathologies and early failures of some types of Cobalt-Chromium-Molybdenum alloy containing artificial hip implants. Hypoxia-associated responses to Cobalt-alloy metal debris were suspected as mediating this untoward reactivity at least in part. Hypoxia Inducible Factor-1α is a major transcription factor involved in hypoxia, and is a potent coping mechanism for cells to rapidly respond to changing metabolic demands. We measured signature hypoxia associated responses (i.e. HIF-1α, VEGF and TNF-α to Cobalt-alloy implant debris both in vitro (using a human THP-1 macrophage cell line and primary human monocytes/macrophages and in vivo. HIF-1α in peri-implant tissues of failed metal-on-metal implants were compared to similar tissues from people with metal-on-polymer hip arthroplasties, immunohistochemically. Increasing concentrations of cobalt ions significantly up-regulated HIF-1α with a maximal response at 0.3 mM. Cobalt-alloy particles (1 um-diameter, 10 particles/cell induced significantly elevated HIF-1α, VEGF, TNF-α and ROS expression in human primary macrophages whereas Titanium-alloy particles did not. Elevated expression of HIF-1α was found in peri-implant tissues and synovial fluid of people with failing Metal-on-Metal hips (n = 5 compared to failed Metal-on-Polymer articulating hip arthroplasties (n = 10. This evidence suggests that Cobalt-alloy, more than other metal implant debris (e.g. Titanium alloy, can elicit hypoxia-like responses that if unchecked can lead to unusual peri-implant pathologies, such as lymphocyte infiltration, necrosis and excessive fibrous tissue growths.

Current trends in ion implantation

International Nuclear Information System (INIS)

Gwilliam, R.M.

2001-01-01

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these challenges, namely the need for tighter control of implant uniformity and dose. Additionally, some vacancy-mediated processes are described with the implication that these may provide areas in which positron annihilation spectroscopy could make a significant contribution. (orig.)

Positron lifetime in vacancy clusters. Application to the study of vacancy-impurity interactions

International Nuclear Information System (INIS)

Corbel, C.

1986-02-01

Positron lifetime measurements are used to study the vacancy recovery (77-650 K) in 20 K electron irradiated dilute gold or iron alloys in stainless steels. Positron lifetimes in clusters of various shapes and structures are calculated to precise the information obtained by measuring the positron lifetime in a vacancy cluster of unknown size and configuration. From the calculations, we have drawn the following conclusions: - the minimal size of an unknown cluster can be deduced from the measurement of the positron lifetime in the cluster; - a decrease of the positron lifetime when the structure of the cluster evolves, means either a decrease of the size of the cluster, or, the appearance of a relaxed configuration. - The positron lifetime is very useful to discriminate between a spatial planar or relaxed configuration and a tri-dimensional one. In AuGe, AuSb, AuTn alloys, vacancy clusters decorated by solute atoms appear at 250 K. Their configurations are different from those in pure Au. Mobile vacancy-solutes complexes are involved in the clustering process in AuGe, AuSb. The clusters are probably decorated by several solute atoms in AuGe and AuSb where the resistivity evidences a clustering of solute atoms. In AuFe, vacancy-single or multi-complexes stable up to 670 K prevent cluster formation. In FeTi, FeSb, FeAu, vacancy migration is hindered by the formation of vacancy-solute complexes up to 315 K (Ti), up to 670 K (Sb), up to 700 K (Au). In FeSi, FeCu, FeAg, tri-dimensional clusters grow less easily than Fe. This is likely due to the formation of several kinds of small decorated clusters with relaxed or planar configurations. They are peculiarly stable, surviving up to 700 K at least. In Si (resp. Ti) doped 59Fe25Ni16Cr, solute atoms retain the vacancies up to 300 K (resp. 320 K) [fr

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

Calculation of the substitutional fraction of ion-implanted He in an α-Fe target

Science.gov (United States)

Erhart, Paul; Marian, Jaime

2011-07-01

Ion-implantation is a useful technique to study irradiation damage in nuclear materials. To study He effects in nuclear fusion conditions, He is co-implanted with damage ions to reproduce the correct He/dpa ratios in the desired or available depth range. However, the short-term fate of these He ions, i.e. over the time scales of their own collisional phase, has not been yet unequivocally established. Here we present a computational study of the short-term evolution of He implantation in an Fe substrate at 700 K to approximate the conditions encountered in dual ion-implantation studies in ferritic materials. Using a combination of SRIM, molecular dynamics and kinetic Monte Carlo (kMC), we calculate the fraction of He atoms that end up in substitutional sites shortly after implantation, i.e. before they contribute to long-term microstructural evolution. We find that fractions of at most 3% should be expected for most implantation studies. Additionally, to inform the kMC calculations, we carry out an exhaustive calculation of interstitial He migration energy barriers in the vicinity of matrix vacancies and find that they vary from approximately 20-60 meV depending on the separation and orientation of the He-vacancy pair.

Calculation of the substitutional fraction of ion-implanted He in an α-Fe target

International Nuclear Information System (INIS)

Erhart, Paul; Marian, Jaime

2011-01-01

Ion-implantation is a useful technique to study irradiation damage in nuclear materials. To study He effects in nuclear fusion conditions, He is co-implanted with damage ions to reproduce the correct He/dpa ratios in the desired or available depth range. However, the short-term fate of these He ions, i.e. over the time scales of their own collisional phase, has not been yet unequivocally established. Here we present a computational study of the short-term evolution of He implantation in an Fe substrate at 700 K to approximate the conditions encountered in dual ion-implantation studies in ferritic materials. Using a combination of SRIM, molecular dynamics and kinetic Monte Carlo (kMC), we calculate the fraction of He atoms that end up in substitutional sites shortly after implantation, i.e. before they contribute to long-term microstructural evolution. We find that fractions of at most 3% should be expected for most implantation studies. Additionally, to inform the kMC calculations, we carry out an exhaustive calculation of interstitial He migration energy barriers in the vicinity of matrix vacancies and find that they vary from approximately 20-60 meV depending on the separation and orientation of the He-vacancy pair.

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Tuomisto, F.; Saarinen, K.; Look, D.C.

2004-01-01

We have used positron annihilation spectroscopy to study the point defects induced by 2 MeV electron irradiation (fluence 6 x 10 17 cm -2 ) in single crystal n-type ZnO samples. The positron lifetime measurements have shown that the zinc vacancies in their doubly negative charge state, which act as dominant compensating centers in the as-grown material, are produced in the irradiation and their contribution to the electrical compensation is important. The lifetime measurements reveal also the presence of competing positron traps with low binding energy and lifetime close to that of the bulk lattice. The analysis of the Doppler broadening of the 511 keV annihilation line indicates that these defects can be identified as neutral oxygen vacancies. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

First-principles study on migration of vacancy in tungsten

International Nuclear Information System (INIS)

Oda, Yasuhiro; Ito, Atsushi M.; Takayama, Arimichi; Nakamura, Hiroaki

2014-03-01

We calculated di-vacancy binding energies and migration energies of mono-vacancy and di-vacancy in tungsten material using DFT calculation. The mono-vacancy diffuses in [111] direction easily rather than in [001] direction. The migration energies of di-vacancies are almost the same value of the mono-vacancy. The migration of di-vacancy is approximately the same as the migration of mono-vacancy. The di-vacancy binding energies are almost zero or negative. The interactions between two vacancies in tungsten material are repulsive from the second to fifth nearest-neighbor. The vacancies are difficult to aggregate since di-vacancy is less stable than mono-vacancy. (author)

Radiation annealing of gallium arsenide implanted with sulphur

CERN Document Server

Ardyshev, V M

2002-01-01

Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

Electronic and magnetic properties of MoS{sub 2} nanoribbons with sulfur line vacancy defects

Energy Technology Data Exchange (ETDEWEB)

Han, Yang [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhou, Jian [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Dong, Jinming, E-mail: jdong@nju.edu.cn [Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

2015-08-15

Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS{sub 2}. • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS{sub 2} are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS{sub 2} nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS{sub 2} nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS{sub 2} nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS{sub 2} nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS{sub 2} nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS{sub 2} nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics.

Cooperatively enhanced dipole forces from artificial atoms in trapped nanodiamonds

Science.gov (United States)

Juan, Mathieu L.; Bradac, Carlo; Besga, Benjamin; Johnsson, Mattias; Brennen, Gavin; Molina-Terriza, Gabriel; Volz, Thomas

2017-03-01

Optical trapping is a powerful tool to manipulate small particles, from micrometre-size beads in liquid environments to single atoms in vacuum. The trapping mechanism relies on the interaction between a dipole and the electric field of laser light. In atom trapping, the dominant contribution to the associated force typically comes from the allowed optical transition closest to the laser wavelength, whereas for mesoscopic particles it is given by the polarizability of the bulk material. Here, we show that for nanoscale diamond crystals containing a large number of artificial atoms, nitrogen-vacancy colour centres, the contributions from both the nanodiamond and the colour centres to the optical trapping strength can be simultaneously observed in a noisy liquid environment. For wavelengths around the zero-phonon line transition of the colour centres, we observe a 10% increase of overall trapping strength. The magnitude of this effect suggests that due to the large density of centres, cooperative effects between the artificial atoms contribute to the observed modification of the trapping strength. Our approach may enable the study of cooperativity in nanoscale solid-state systems and the use of atomic physics techniques in the field of nano-manipulation.

Magnetic properties of ZnO nanowires with Li dopants and Zn vacancies

Energy Technology Data Exchange (ETDEWEB)

Guan, Xinhong; Cai, Ningning [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China); Yang, Chuanghua [School of Physics and Telecommunication Engineering, Shanxi University of Technology (SNUT), Hanzhong 723001, Shanxi (China); Chen, Jun [Beijing Applied Physics and Computational Mathematics, Beijing 100088 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China)

2016-04-30

The electronic and magnetic properties of ZnO nanowire with Li dopants and vacancies have been investigated using first-principles density functional theory. It is found that the Zn vacancy can induce magnetism while increasing the formation energy of the system. However, the calculated results indicate that the introduction of Li-dopants will reduce the formation energy of system. We also have studied the magnetic couplings with vacancies as well as their corresponding configurations with Li-dopants for four configurations of ZnO nanowires. The results show that ferromagnetic properties can be improved/reversed after the introduction of Li-dopants. Ferromagnetic mechanism is originated from the fierce p–p hybridization of O near the Fermi level. We find that ferromagnetism of Li-doped ZnO nanowires with Zn vacancies can be realized at room temperature and they are promising spintronic materials. - Highlights: • Li-dopants will reduce the formation energy of ZnO nanowires with Zn vacancy. • The fierce p–p hybridization of O near Fermi level is responsible for FM properties. • Li-doped ZnO–V{sub Zn} nanowire is a promising FM semiconductor material.

Ab initio study of He trapping, diffusion and clustering in Y{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Lai, Wensheng, E-mail: wslai@tsinghua.edu.cn [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing 100084 (China); Ou, Yidian; Lou, Xiaofeng [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing 100084 (China); Wang, Fei [Advanced Material Laboratory, School of Materials Science & Engineering, Tsinghua University, Beijing 100084 (China); Xi’an High Technology Research Center, Xi’an 710025 (China)

2017-02-15

Ab initio calculations have been performed to study the formation and migration energies of helium atoms and the stability of helium-vacancy clusters in a Y{sub 2}O{sub 3} crystal. The calculated formation energies show that a helium atom is preferred to occupy an yttrium vacancy site with a large volume and low electron density. The migration energy of the helium atom by an interstitial mechanism is 0.31 eV. Calculations of the binding energies of an extra helium atom to the helium-vacancy clusters vary with the number of helium atoms in the clusters with a typical value of 0.4–0.7 eV. This turns negative when the He atoms reach saturation; that indicates that vacancy clusters can attract a limited number of helium atoms to form small stable helium-vacancy clusters. Our calculations suggest that the use of Y{sub 2}O{sub 3} in oxide dispersion strengthened ferritic steels may reduce He gas bubble formation as it may act as sink for trapping helium atoms.

Vacancies supersaturation induced by fast neutron irradiation in FeNi alloys

International Nuclear Information System (INIS)

Lucki, G.; Chambron, W.; Watanabe, S.; Verdone, J.

1975-01-01

The void formation in metals and alloys during irradiation with high-energy particles is a problem of interest in physics and of paramount importance in nuclear technology. Voids are formed as a consequence of vacancy supersaturation and result in swelling as well as in changes of mechanical, electrical and magnetic properties of materials used in power reactors. Isothermal annealings were performed between 400 and 500 0 C with and without fast-neutron (1 MeV) irradiation. Pure Fe--Ni (50--50 at. percent) was irradiated in the Melousine reactor in Grenoble, and Fe--Ni(Mo) (50--50 at. percent + 50 ppM), in the IEAR-1 reactor at the Instituto de Energia Atomica in Sao Paulo. The toroidal-shaped specimens were fabricated from Johnson Mathey zone-refined ingots, and were initially annealed at 800 0 C during 1 h in hydrogen atmosphere and then slowly cooled (4 h) inside the furnace. Magnetic After Effect measurements (MAE) permitted the evaluation of activation energies during fast-neutron irradiation (1.54 eV) and without irradiation (3.14 eV) for pure Fe--Ni and respectively (1.36 eV) and (2.32 eV) for Fe--Ni(Mo). Since the time constants of the relaxation process are inversely proportional to the vacancy concentration, a quantitative evaluation of vacancy supersaturation was made; it decreases from the value 700 at 410 0 C to the value 40 at 490 0 C for pure Fe--Ni and from 765 to 121 for Fe--Ni(Mo) in the same temperature range. 3 figures, 5 tables

Solute-vacancy binding in aluminum

International Nuclear Information System (INIS)

Wolverton, C.

2007-01-01

Previous efforts to understand solute-vacancy binding in aluminum alloys have been hampered by a scarcity of reliable, quantitative experimental measurements. Here, we report a large database of solute-vacancy binding energies determined from first-principles density functional calculations. The calculated binding energies agree well with accurate measurements where available, and provide an accurate predictor of solute-vacancy binding in other systems. We find: (i) some common solutes in commercial Al alloys (e.g., Cu and Mg) possess either very weak (Cu), or even repulsive (Mg), binding energies. Hence, we assert that some previously reported large binding energies for these solutes are erroneous. (ii) Large binding energies are found for Sn, Cd and In, confirming the proposed mechanism for the reduced natural aging in Al-Cu alloys containing microalloying additions of these solutes. (iii) In addition, we predict that similar reduction in natural aging should occur with additions of Si, Ge and Au. (iv) Even larger binding energies are found for other solutes (e.g., Pb, Bi, Sr, Ba), but these solutes possess essentially no solubility in Al. (v) We have explored the physical effects controlling solute-vacancy binding in Al. We find that there is a strong correlation between binding energy and solute size, with larger solute atoms possessing a stronger binding with vacancies. (vi) Most transition-metal 3d solutes do not bind strongly with vacancies, and some are even energetically strongly repelled from vacancies, particularly for the early 3d solutes, Ti and V

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

Oxygen vacancy induced two-dimensional electron system in disordered-crystalline LaAlO{sub 3}/KTaO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zapf, Michael; Gabel, Judith; Scheiderer, Philipp; Dudy, Lenart; Sing, Michael; Claessen, Ralph [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, Christoph; Lee, Tien-Lin [Diamond Light Source Ltd., Didcot (United Kingdom)

2016-07-01

Two-dimensional electron systems (2DESs) in oxide heterostructures based on SrTiO{sub 3} are considered to be a promising platform for future microelectronic technology. A variety of interesting properties such as ferromagnetism, resistive switching and superconductivity are linked to interfacial n-doping involving oxygen vacancies. The introduction of a high Z-cation with large spin-orbit coupling like Ta offers an exciting new parameter. We report on a new oxygen vacancy induced 2DES located at the interface of disordered LaAlO{sub 3} and crystalline KTaO{sub 3}, which exhibits remarkably high electron mobilities and charge carrier concentrations. The number of charge carriers can be readily manipulated by the film thickness and irradiation with intense X-rays. Our synchrotron-based hard X-ray photoemission experiments provide a direct probe of the Ta 5d charge carriers at the buried interface to obtain information on the charge carrier density, its depth distribution, and the band structure.

Soft-type trap-induced degradation of MoS2 field effect transistors

Science.gov (United States)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Cooling the center-of-mass motion of a diamond nanocrystal in a magneto-gravitational trap

Science.gov (United States)

Hsu, Jen-Feng

A magneto-gravitational trap for micro/nanometer sized diamagnetic particles, such as diamond nanocrystals, is tested and characterized. After exploring various other systems, such as a suspended graphene beam and an optical trap, this magneto-gravitational nanomechanical trapping system for diamond with nitrogen-vacancy (NV) centers presents unique advantages for experiments in fundamental quantum mechanics. Those include, for example, the generation of large quantum superposition states and tests of quantum gravity. Features are demonstrated for this system, such as stable and passive levitation from atmospheric pressure to high vacuum, low resonant frequencies and damping rates, and cooling of the center-of-mass motions to below 1 K. The construction of the trap, vacuum system, optics, and motion detection electronics are described in detail.

On the role of Mn(IV) vacancies in the photoreductive dissolution of hexagonal birnessite

Energy Technology Data Exchange (ETDEWEB)

Kwon, K.D.; Refson, K.; Sposito, G.

2009-06-01

Photoreductive dissolution of layer type Mn(IV) oxides (birnessite) under sunlight illumination to form soluble Mn(II) has been observed in both field and laboratory settings, leading to a consensus that this process is a key driver of the biogeochemical cycling of Mn in the euphotic zones of marine and freshwater ecosystems. However, the underlying mechanisms for the process remain unknown, although they have been linked to the semiconducting characteristics of hexagonal birnessite, the ubiquitous Mn(IV) oxide produced mainly by bacterial oxidation of soluble Mn(II). One of the universal properties of this biogenic mineral is the presence of Mn(IV) vacancies, long-identified as strong adsorption sites for metal cations. In this paper, the possible role of Mn vacancies in photoreductive dissolution is investigated theoretically using quantum mechanical calculations based on spin-polarized density functional theory (DFT). Our DFT study demonstrates unequivocally that Mn vacancies significantly reduce the band-gap energy for hexagonal birnessite relative to a hypothetical vacancy-free MnO{sub 2} and thus would increase the concentration of photo-induced electrons available for Mn(IV) reduction upon illumination of the mineral by sunlight. Calculations of the charge distribution in the presence of vacancies, although not fully conclusive, show a clear separation of photo-induced electrons and holes, implying a slow recombination of these charge-carriers that facilitates the two-electron reduction of Mn(IV) to Mn(II).

Histological and histomorphometrical analysis of a silica matrix embedded nanocrystalline hydroxyapatite bone substitute using the subcutaneous implantation model in Wistar rats

Energy Technology Data Exchange (ETDEWEB)

Ghanaati, Shahram; Orth, Carina; Barbeck, Mike; Kirkpatrick, Charles James [Institute of Pathology, University Medical Center of the Johannes Gutenberg University Mainz, Langenbeckstrasse 1, 55101 Mainz (Germany); Willershausen, Ines [Institute for Dental Material Sciences and Technology, University Medical Center of the Johannes Gutenberg University Mainz, Anselm-Franz-von-Bentzel-Weg 14, 55128 Mainz (Germany); Thimm, Benjamin W [Institute for Biomechanics, ETH Zuerich, Wolfgang-Pauli-Str.10, 8093 Zuerich (Switzerland); Booms, Patrick [Leeds Institute of Molecular Medicine, Section of Medicine, Surgery and Anaesthesia, University of Leeds (United Kingdom); Stuebinger, Stefan; Landes, Constantin; Sader, Robert Anton, E-mail: ghanaati@uni-mainz.d [Department for Oral, Cranio-Maxillofacial and Facial Plastic Surgery, Medical Center of the Goethe University Frankfurt, Theodor-Stein-Kai 7, 60596 Frankfurt am Main (Germany)

2010-06-01

The clinical suitability of a bone substitute material is determined by the ability to induce a tissue reaction specific to its composition. The aim of this in vivo study was to analyze the tissue reaction to a silica matrix-embedded, nanocrystalline hydroxyapatite bone substitute. The subcutaneous implantation model in Wistar rats was chosen to assess the effect of silica degradation on the vascularization of the biomaterial and its biodegradation within a time period of 6 months. Already at day 10 after implantation, histomorphometrical analysis showed that the vascularization of the implantation bed reached its peak value compared to all other time points. Both vessel density and vascularization significantly decreased until day 90 after implantation. In this time period, the bone substitute underwent a significant degradation initiated by TRAP-positive and TRAP-negative multinucleated giant cells together with macrophages and lymphocytes. Although no specific tissue reaction could be related to the described silica degradation, the biomaterial was close to being fully degraded without a severe inflammatory response. These characteristics are advantageous for bone regeneration and remodeling processes.

Histological and histomorphometrical analysis of a silica matrix embedded nanocrystalline hydroxyapatite bone substitute using the subcutaneous implantation model in Wistar rats

International Nuclear Information System (INIS)

Ghanaati, Shahram; Orth, Carina; Barbeck, Mike; Kirkpatrick, Charles James; Willershausen, Ines; Thimm, Benjamin W; Booms, Patrick; Stuebinger, Stefan; Landes, Constantin; Sader, Robert Anton

2010-01-01

The clinical suitability of a bone substitute material is determined by the ability to induce a tissue reaction specific to its composition. The aim of this in vivo study was to analyze the tissue reaction to a silica matrix-embedded, nanocrystalline hydroxyapatite bone substitute. The subcutaneous implantation model in Wistar rats was chosen to assess the effect of silica degradation on the vascularization of the biomaterial and its biodegradation within a time period of 6 months. Already at day 10 after implantation, histomorphometrical analysis showed that the vascularization of the implantation bed reached its peak value compared to all other time points. Both vessel density and vascularization significantly decreased until day 90 after implantation. In this time period, the bone substitute underwent a significant degradation initiated by TRAP-positive and TRAP-negative multinucleated giant cells together with macrophages and lymphocytes. Although no specific tissue reaction could be related to the described silica degradation, the biomaterial was close to being fully degraded without a severe inflammatory response. These characteristics are advantageous for bone regeneration and remodeling processes.

Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

Science.gov (United States)

Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

2007-09-01

Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

Analysis of induced electrical currents from magnetic field coupling inside implantable neurostimulator leads

Directory of Open Access Journals (Sweden)

Seidman Seth J

2011-10-01

Full Text Available Abstract Background Over the last decade, the number of neurostimulator systems implanted in patients has been rapidly growing. Nearly 50, 000 neurostimulators are implanted worldwide annually. The most common type of implantable neurostimulators is indicated for pain relief. At the same time, commercial use of other electromagnetic technologies is expanding, making electromagnetic interference (EMI of neurostimulator function an issue of concern. Typically reported sources of neurostimulator EMI include security systems, metal detectors and wireless equipment. When near such sources, patients with implanted neurostimulators have reported adverse events such as shock, pain, and increased stimulation. In recent in vitro studies, radio frequency identification (RFID technology has been shown to inhibit the stimulation pulse of an implantable neurostimulator system during low frequency exposure at close distances. This could potentially be due to induced electrical currents inside the implantable neurostimulator leads that are caused by magnetic field coupling from the low frequency identification system. Methods To systematically address the concerns posed by EMI, we developed a test platform to assess the interference from coupled magnetic fields on implantable neurostimulator systems. To measure interference, we recorded the output of one implantable neurostimulator, programmed for best therapy threshold settings, when in close proximity to an operating low frequency RFID emitter. The output contained electrical potentials from the neurostimulator system and those induced by EMI from the RFID emitter. We also recorded the output of the same neurostimulator system programmed for best therapy threshold settings without RFID interference. Using the Spatially Extended Nonlinear Node (SENN model, we compared threshold factors of spinal cord fiber excitation for both recorded outputs. Results The electric current induced by low frequency RFID emitter

Gigantic uphill drift of vacancies and self-interstitials in silicon

International Nuclear Information System (INIS)

Voronkov, V.V.; Falster, R.

2009-01-01

Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity αG. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a clear evidence in favour of a strong (even gigantic) drift of both kinds of intrinsic point defects. The drift coefficients α V (for vacancies) and α I (for self-interstitials) are deduced by fitting the simulating defect profiles to the observed location of halt-induced interstitial region immersed into a vacancy-type crystal.

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Science.gov (United States)

Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

2008-03-01

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

Science.gov (United States)

Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

2015-04-01

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

Trapping and re-emission of energetic hydrogen and helium ions in materials

International Nuclear Information System (INIS)

Yamaguchi, Sadae

1981-01-01

The experimental results on the trapping and re-emission of energetic hydrogen and helium ions in materials are explained. The trapping of deuterium and helium in graphite saturates at the concentration of 10 18 ions/cm 2 . The trapping rate of hydrogen depends on the kinds of target materials. In the case of the implantation in Mo over 3 x 10 16 H/cm 2 , hydrogen is hardly trapped. On the other hand, the trapping of hydrogen in Ti, Zr and Ta which form solid solution is easily made. The hydrogen in these metals can diffuse toward the inside of metals. The deuterium retained in 316 SS decreased with time. The trapping rate reached saturation more rapidly at higher implantation temperature. The effective diffusion constant for the explanation of the re-emission process is 1/100 as small as the ordinary value. The radiation damage due to helium irradiation affects on the trapping of deuterium in Mo. The temperature dependence of the trapping rate can be explained by the diffusion model based on the Sievert's law. The re-emission of helium was measured at various temperature. At low temperature, the re-emission was low at first, then the rate increased. At high temperature, the re-emission rate was high from the beginning. (Kato, T.)

Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: Applications to vacancy defects in compound semiconductors

International Nuclear Information System (INIS)

Makkonen, I.; Rauch, C.; Mäki, J.-M.; Tuomisto, F.

2012-01-01

The Doppler broadening of the positron annihilation radiation contains information on the chemical environment of vacancy defects trapping positrons in solids. The measured signal can, for instance, reveal impurity atoms situated next to vacancies. As compared to integrated quantities such as the positron annihilation rate or the annihilation line shape parameters, the full Doppler spectrum measured in the coincidence mode contains much more useful information for defect identification. This information, however, is indirect and complementary understanding is needed to fully interpret the results. First-principles calculations are a valuable tool in the analysis of measured spectra. One can construct an atomic-scale model for a given candidate defect, calculate from first principles the corresponding Doppler spectrum, and directly compare results between experiment and theory. In this paper we discuss recent examples of successful combinations of coincidence Doppler broadening measurements and supporting first-principles calculations. These demonstrate the predictive power of state-of-the-art calculations and the usefulness of such an approach in the chemical analysis of vacancy defects.

Acute pericarditis with cardiac tamponade induced by pacemaker implantation.

Science.gov (United States)

Shingaki, Masami; Kobayashi, Yutaka; Suzuki, Haruo

2015-11-01

An 87-year-old woman was diagnosed with third-degree atrioventricular block and underwent pacemaker implantation. On postoperative day 12, she experienced cardiac tamponade that was suspected on computed tomography to be caused by lead perforation; therefore, we performed open-heart surgery. However, we could not identify a perforation site on the heart, and drained a 400-mL exudative pericardial effusion. Subsequently, we diagnosed the pericardial effusion as due to pericarditis induced by pacemaker implantation. It is sometimes difficult to distinguish pericarditis from pacemaker lead perforation, so both should be included in the differential diagnosis. © The Author(s) 2014.

Realizing nanographene activated by a vacancy to solve hydrogen storage problem

Science.gov (United States)

Sunnardianto, Gagus Ketut; Maruyama, Isao; Kusakabe, Koichi

We found a triply hydrogenated vacancy (V111) in nanographene reduces an activation barrier of adsorption-desorption process in both ways in an equal manner from the known values for pristine graphene as well as those of other hydrogenated vacancies of graphene. This finding may give a key to overcome existing problems in the hydrogen uptake and release processes in known hydrogen storage materials, e.g. graphene and organic hydrides (OHs) in near ambient operation temperature. In this study, we used DFT-NEB simulation to estimate the barrier height, which is supported by realized real experiments. We consider a nanographene molecule (VANG) which contains V111 with armchair structure at the periphery. We found interesting feature in comparable values of energy barriers for both hydrogen uptake and release, where hydrogenation process is even a little bit endothermic and dehydrogenation is a little but exothermic nature. Thus, this material structure acts as ``self-catalytic properties'', which has an important role in reducing an energy barrier and as a trapping site for hydrogen serving a new material prevailing other hopeful candidates. The work is supported by JSPS KAKENHI in Science of Atomic Layers\\x9D.

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, F.; Saarinen, K. [Laboratory of Physics, Helsinki University of Technology (Finland); Look, D.C. [Semiconductor Research Center, Wright State University, Dayton, Ohio (United States)

2004-08-01

We have used positron annihilation spectroscopy to study the point defects induced by 2 MeV electron irradiation (fluence 6 x 10{sup 17} cm{sup -2}) in single crystal n-type ZnO samples. The positron lifetime measurements have shown that the zinc vacancies in their doubly negative charge state, which act as dominant compensating centers in the as-grown material, are produced in the irradiation and their contribution to the electrical compensation is important. The lifetime measurements reveal also the presence of competing positron traps with low binding energy and lifetime close to that of the bulk lattice. The analysis of the Doppler broadening of the 511 keV annihilation line indicates that these defects can be identified as neutral oxygen vacancies. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fast nanoscale addressability of nitrogen-vacancy spins via coupling to a dynamic ferromagnetic vortex

Science.gov (United States)

Wolf, M. S.; Badea, R.; Berezovsky, J.

2016-01-01

The core of a ferromagnetic vortex domain creates a strong, localized magnetic field, which can be manipulated on nanosecond timescales, providing a platform for addressing and controlling individual nitrogen-vacancy centre spins in diamond at room temperature, with nanometre-scale resolution. Here, we show that the ferromagnetic vortex can be driven into proximity with a nitrogen-vacancy defect using small applied magnetic fields, inducing significant nitrogen-vacancy spin splitting. We also find that the magnetic field gradient produced by the vortex is sufficient to address spins separated by nanometre-length scales. By applying a microwave-frequency magnetic field, we drive both the vortex and the nitrogen-vacancy spins, resulting in enhanced coherent rotation of the spin state. Finally, we demonstrate that by driving the vortex on fast timescales, sequential addressing and coherent manipulation of spins is possible on ∼100 ns timescales. PMID:27296550

Exchange and Dzyaloshinskii-Moriya interactions in bulk FeGe: Effects of atomic vacancies

Science.gov (United States)

Loh, G. C.; Gan, C. K.

2017-05-01

We examine the effects of atomic vacancies on the (1) spin interaction, and (2) electronic character in the cubic B20 chiral magnet FeGe. For the former, Heisenberg exchange and Dzyaloshinskii-Moriya (DM) interactions are studied. The latter is done via a particular Wannier flavor of the Hamiltonian in the form of maximally-localized Wannier functions (MLWFs). Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk FeGe, in its pristine form, and with a Fe (Fe75%Ge100%) or Ge vacancy (Fe100%Ge75%) is investigated. Despite the presence of vacancies, the ground state of FeGe remains helimagnetic, i.e. spin spirals in FeGe are fairly robust. The energetic stability of FeGe increases in the presence of the vacancies. The spiral size is increased by approximately 40%, suggesting that vacancies can be introduced to manipulate the chiral order. The vacancies lift the band degeneracy in the valence manifold of the Wannier-interpolated band structures. Only the spin-down Fermi surfaces are substantially different between the pristine and defective FeGe; it is electron-like in the pristine case, but largely hole-like in the defective ones. The Ge vacancy splits the Fermi surface more than the Fe vacancy. The Heisenberg exchange between nearest Fe pairs is ferromagnetic in pristine FeGe. This Fe-Fe interaction remains ferromagnetic, albeit a slight decrease in strength, in the presence of a Fe vacancy. In contrast, a Ge vacancy in FeGe induces anti-ferromagnetism between nearest Fe pairs. By including spin-orbit coupling effects, we find that the DM interaction of defective FeGe is reversed in sign, and it is more uniform in strength along the three highly symmetric directions, relative to that in pristine FeGe. All in all, the versatility of FeGe makes it an excellent functional material, especially in data storage and spintronics applications.

Understanding Oxygen Vacancy Formation, Interaction, Transport, and Strain in SOFC Components via Combined Thermodynamics and First Principles Calculations

Science.gov (United States)

Das, Tridip

Understanding of the vacancy formation, interaction, increasing its concentration and diffusion, and controlling its chemical strain will advance the design of mixed ionic and electronic conductor (MIEC) materials via element doping and strain engineering. This is especially central to improve the performance of the solid oxide fuel cell (SOFC), an energy conversion device for sustainable future. The oxygen vacancy concentration grows exponentially with the temperature at dilute vacancy concentration but not at higher concentration, or even decreases due to oxygen vacancy interaction and vacancy ordered phase change. This limits the ionic conductivity. Using density functional theory (DFT), we provided fundamental understanding on how oxygen vacancy interaction originates in one of the typical MIEC, La1-xSrxFeO3-delta (LSF). The vacancy interaction is determined by the interplay of the charge state of multi-valence ion (Fe), aliovalent doping (La/Sr ratio), the crystal structure, and the oxygen vacancy concentration and/or nonstoichiometry (delta). It was found excess electrons left due to the formation of a neutral oxygen vacancy get distributed to Fe directly connected to the vacancy or to the second nearest neighboring Fe, based on crystal field splitting of Fe 3d orbital in different Fe-O polyhedral coordination. The progressively larger polaron size and anisotropic shape changes with increasing Sr-content resulted in increasing oxygen vacancy interactions, as indicated by an increase in the oxygen vacancy formation energy above a critical delta threshold. This was consistent with experimental results showing that Sr-rich LSF and highly oxygen deficient compositions are prone to oxygen-vacancy-ordering-induced phase transformations, while Sr-poor and oxygen-rich LSF compositions are not. Since oxygen vacancy induced phase transformations, cause a decrease in the mobile oxygen vacancy site fraction (X), both delta and X were predicted as a function of

Positron trapping at defects in copper oxide superconductors

International Nuclear Information System (INIS)

McMullen, T.; Jena, P.; Khanna, S.N.; Li, Y.; Jensen, K.O.

1991-01-01

Positron states and lifetimes at defects in the copper oxide superconductors La 2-x Sr x CuO 4 , YBa 2 Cu 3 O 7-x , and Bi 2 Sr 2 CaCu 2 O 8+x are calculated with use of the superposed-atom model. In the Bi 2 Sr 2 CaCu 2 O 8+x compound, we find that the smaller metal-ion vacancies appear to only bind positrons weakly, while missing oxygens do not trap positrons. In contrast, metal-ion vacancies in La 2-x Sr x CuO 4 and YBa 2 Cu 3 O 7-x bind positrons by ∼1 eV, and oxygen-related defects appear to be the weak-binding sites in these materials. The sites that bind positrons only weakly, by energies ∼k BT , are of particular interest in view of the complex temperature dependences of the annihilation characteristics that are observed in these materials

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar

2011-03-31

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar; Pulikkotil, J. J.; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

Helium implanted Eurofer97 characterized by positron beam Doppler broadening and Thermal Desorption Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Carvalho, I., E-mail: i.carvalho@m2i.nl [Materials Innovation Institute (M2i), Delft (Netherlands); Schut, H. [Delft University of Technology, Faculty of Applied Sciences, Delft (Netherlands); Fedorov, A.; Luzginova, N. [Nuclear Research and Consultancy Group (NRG), Petten (Netherlands); Desgardin, P. [CEMHTI-CNRS, 3A Rue de la Férolerie, 45071 Orléans Cedex (France); Sietsma, J. [Delft University of Technology, Faculty of Mechanical, Maritime and Materials Engineering, Delft (Netherlands)

2013-11-15

Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To produce irradiation induced defects, Eurofer97 samples were implanted with helium at energies of 500 keV and 2 MeV and doses of 1 × 10{sup 15}–10{sup 16} He/cm{sup 2}, creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). Results show that up to ∼600 K peaks that can be attributed to He desorption from overpressured He{sub n}V{sub m} (n > m) clusters and vacancy assisted mechanism in the case of helium in the substitutional position. The temperature range 600–1200 K is related to the formation of larger clusters He{sub n}V{sub m} (n < m). The dissociation of the HeV and the phase transition attributed to a sharp peak in the TDS spectra at 1200 K. Above this temperature, the release of helium from bubbles is observed.

Developing optical traps for ultra-sensitive analysis

International Nuclear Information System (INIS)

Zhao, X.; Vieira, D.J.; Guckert, R.; Crane, S.

1998-01-01

The authors describe the coupling of a magneto-optical trap to a mass separator for the ultra-sensitive detection of selected radioactive species. As a proof of principle test, they have demonstrated the trapping of ∼ 6 million 82 Rb (t 1/2 = 75 s) atoms using an ion implantation and heated foil release method for introducing the sample into a trapping cell with minimal gas loading. Gamma-ray counting techniques were used to determine the efficiencies of each step in the process. By far the weakest step in the process is the efficiency of the optical trap itself (0.3%). Further improvements in the quality of the nonstick dryfilm coating on the inside of the trapping cell and the possible use of larger diameter laser beams are indicated. In the presence of a large background of scattered light, this initial work achieved a detection sensitivity of ∼ 4,000 trapped atoms. Improved detection schemes using a pulsed trap and gated photon detection method are outlined. Application of this technology to the areas of environmental monitoring and nuclear proliferation are foreseen

Vacancy defects in epitaxial La0.7Sr0.3MnO3 thin films probed by a slow positron beam

International Nuclear Information System (INIS)

Jin, S W; Zhou, X Y; Wu, W B; Zhu, C F; Weng, H M; Wang, H Y; Zhang, X F; Ye, B J; Han, R D

2004-01-01

Vacancy defects in epitaxial La 0.7 Sr 0.3 MnO 3 (LSMO) thin films on LaAlO 3 substrates were detected using a variable energy positron beam. The line-shape S parameter of the epitaxial thin films deposited at different oxygen pressures was measured as a function of the implanting positron energy E. Our results show that the S parameter of the films changes non-monotonically with their deposition oxygen pressures. For the films deposited at lower oxygen pressures, the increase in S value in the films is attributed to the increase in oxygen vacancies and/or related defect-V O complexes, and for those deposited at higher oxygen pressures, the larger S parameter of the films is caused by the grain boundaries and/or metallic ion vacancies. The surface morphology of the films was also characterized to analyse the open volume defects in the LSMO films

Suppression of antiferromagnetic interactions through Cu vacancies in Mn-substituted CuInSe2 chalcopyrites

International Nuclear Information System (INIS)

Yao Jinlei; Brunetta, Carl D; Aitken, Jennifer A

2012-01-01

Stoichiometric and Cu-poor Cu 0.95-x Mn 0.05 InSe 2 (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-eMn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors. (paper)

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

A Facile Approach to Prepare Black TiO2 with Oxygen Vacancy for Enhancing Photocatalytic Activity

Science.gov (United States)

Chen, Shihao; Xiao, Yang; Hu, Zhengfa; Zhao, Hui; Xie, Wei

2018-01-01

Black TiO2 has triggered worldwide research interest due to its excellent photocatalytic properties. However, the understanding of its structure–property relationships and a more effective, facile and versatile method to produce it remain great challenges. We have developed a facile approach to synthesize black TiO2 nanoparticles with significantly improved light absorption in the visible and infrared regions. The experimental results show that oxygen vacancies are the major factors responsible for black coloration. More importantly, our black TiO2 nanoparticles have no Ti3+ ions. These oxygen vacancies could introduce localized states in the bandgap and act as trap centers, significantly decreasing the electron–hole recombination. The photocatalytic decomposition of both rhodamine B and methylene blue demonstrated that, under ultraviolet light irradiation, better photocatalytic performance is achieved with our black TiO2 nanoparticles than with commercial TiO2 nanoparticles. PMID:29659500

Concerning the trapping of positrons in ionic solids

International Nuclear Information System (INIS)

Kunz, A.B.; Waber, J.T.

1982-01-01

The total energy of several ionic crystals which contain lattice defects plus a positron were studied in the Hartree-Fock limit. Large uncontracted basis sets of GTO's were used to ensure binding if it would occur. Specifically, the attraction of a positron to a cation vacancy was sought for alkali halides as well as for nickel oxide. While the binding energy to nickel oxide was 8.1 eV, there was very little tendency for the positron to be trapped in the alkali halides. The trapping at a Vsub(k) site was also investigated using similar restricted HF approximation with large sets of GTO's. This defect in LiF was shown to be stable by 0.73 eV, by itself but was unable to bind a positron. These two results are not compatible with qPs being localized in such crystals. (Auth.)

Electrically tunable magnetic configuration on vacancy-doped GaSe monolayer

Science.gov (United States)

Tang, Weiqing; Ke, Congming; Fu, Mingming; Wu, Yaping; Zhang, Chunmiao; Lin, Wei; Lu, Shiqiang; Wu, Zhiming; Yang, Weihuang; Kang, Junyong

2018-03-01

Group-IIIA metal-monochalcogenides with the enticing properties have attracted tremendous attention across various scientific disciplines. With the aim to satisfy the multiple demands of device applications, here we report a design framework on GaSe monolayer in an effort to tune the electronic and magnetic properties through a dual modulation of vacancy doping and electric field. A half-metallicity with a 100% spin polarization is generated in a Ga vacancy doped GaSe monolayer due to the nonbonding 4p electronic orbital of the surrounding Se atoms. The stability of magnetic moment is found to be determined by the direction of applied electric field. A switchable magnetic configuration in Ga vacancy doped GaSe monolayer is achieved under a critical electric field of 0.6 V/Å. Electric field induces redistribution of the electronic states. Finally, charge transfers are found to be responsible for the controllable magnetic structure in this system. The magnetic modulation on GaSe monolayer in this work offers some references for the design and fabrication of tunable two-dimensional spintronic device.

7 CFR 1221.105 - Vacancies.

Science.gov (United States)

2010-01-01

... Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING AGREEMENTS... INFORMATION ORDER Sorghum Promotion, Research, and Information Order Sorghum Promotion, Research, and Information Board § 1221.105 Vacancies. To fill any vacancy occasioned by the death, removal, resignation, or...

Ion implantation-induced defects in Oxide Dispersion Strengthened (ODS) steel probed by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Anwand, Wolfgang; Butterling, Maik; Brauer, Gerhard; Wagner, Andreas [HZDR, Institut fuer Strahlenphysik (Germany); Richter, Astrid [Technische Hochschule Wildau (Germany); Koegler, Reinhard [HZDR, Institut fuer Ionenstrahlphysik und Materialforschung (Germany); Chen, C.L. [I-Shou University, Kaohsiung (China)

2012-07-01

ODS steel is a promising candidate for an application in fission and fusion power plants of a new generation because of its advantageous properties as stability and temperature resistance. A microscopic understanding of the physical reasons of the mechanical and thermal properties as well as the behaviour of the material under irradiation is an important pre-condition for such applications. The investigated ODS FeCrAl alloy *PM2000* has been produced in a powder metallurgical way. Neutron-induced damage at ODS steel was simulated by He{sup +} and Fe{sup 2+} co-implantation with energies of 2.5 MeV and 400 keV, respectively, and different fluences. The implantation has been carried out with a dual ion beam which enables a simultaneous implantation of both ion types. Thereby the Fe{sup 2+} implantation was used for the creation of radiation defects, and He{sup +} was implanted in order to reproduce He bubbles as they are expected to appear by neutron irradiation. The implantation-induced damage was investigated by depth dependent Doppler broadening measurements using a variable energy slow positron beam.

Radiation defects in Te-implanted germanium. Electron microscopy and computer simulation studies

International Nuclear Information System (INIS)

Kalitzova, M.G.; Karpuzov, D.S.; Pashov, N.K.

1985-01-01

Direct observation of radiation damage induced by heavy ion implantation in crystalline germanium by means of high-resolution electron microscopy is reported. The dark-field lattice imaging mode is used, under conditions suitable for object-like imaging. Conventional TEM is used for estimating the efficiency of creating visibly damaged regions. Heavy ion damage clusters with three types of inner structure are observed: with near-perfect crystalline cores, and with metastable and stable amorphous cores. The MARLOWE computer code is used to simulate the atomic collision cascades and to obtain the lateral spread distributions of point defects created. A comparison of high-resolution electron microscopy (HREM) with computer simulation results shows encouraging agreement for the average cluster dimensions and for the lateral spread of vacancies and interstitials. (author)

Influence of impurities on the evolution of vacancy-type defects in neutron-irradiated nickel

International Nuclear Information System (INIS)

Druzhkov, A.P.; Perminov, D.A.; Arbuzov, V.L.

2012-01-01

Highlights: ► We study, by means of PAS, the effects of purity on damage evolution in neutron-irradiated Ni at 330 K. ► Impurity carbon atoms in solution decrease the cascade efficiency during irradiation. ► C–V complexes are formed on the recovery stage III in impure Ni irradiated with 10 −4 dpa. ► The formation of V-loops and SFTs dominate on stage III with increasing dose level. ► The thermal stability of SFTs in impure Ni is similar to that in pure Ni. - Abstract: In order to investigate the effect of impurities on vacancy defect evolution in nickel, specimens with high (5N) and technical (3N) purity were neutron-irradiated at ∼330 K in the IVV-2M reactor (Russia) to fluencies in the range of 1 × 10 21 –1 × 10 23 n/m 2 (E > 0.1 MeV) corresponding to displacement dose levels in the range of about 0.0001–0.01 dpa and subsequently stepwise annealed to about 900 K. The specimens of Ni with different purities were characterized both in as-irradiated state as well as after post-irradiation annealing by positron annihilation spectroscopy. The formation of three-dimensional vacancy clusters (3D-VCs) in cascades was observed under neutron irradiation. The density and size of 3D-VCs depended not only on dose level, but also on purity. The population of 3D-VCs in the technical Ni is lower than that in the high-purity Ni. 3D-VCs collapse into secondary-type clusters (stacking fault tetrahedra (SFTs) and vacancy loops) during stepwise annealing at 350–450 K (stage III in Ni). The suppression of secondary cluster formation in 3N Ni is attributed to an effective vacancy interaction with impurity carbon atoms, which based on a relatively large vacancy–carbon atom binding energy (0.32–0.35 eV). The trapping of vacancies released at the collapse of 3D-VCs by the interstitial impurity atoms dominates at low irradiation dose level (10 −4 dpa). Thus, we found that carbon impurity atoms have strong effects both on the primary vacancy-type defect

Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities

CERN Document Server

Georgobiani, A N; Dravin, V A; Lepnev, L S; Mullabaev, I D; Ursaki, V V; Iljukhina, Z P

1999-01-01

The investigation of traps and recombination centres in structures based on ZnSe single crystals by means of the deep level transient spectroscopy, photoluminescence and electroluminescence methods are presented. The implantation of Ag sup + , Au sup + and N sup + ions was used for the creation of these centres. The activation energies equal to 0.26, 0.35 and 0.86 eV were determined from the temperature dependencies of the carriers emission rate from DLTS spectra for majority carriers (electrons). The levels 0.42 and 0.26 eV were observed only in the samples implanted with Ag and Au, respectively. In the case of minority carriers (holes), in all the diodes produced by Ag sup + ions implantation, the depth of the trap was 0.30 eV. Traps with a depth of about 0.72 eV were observed independently on various kind of impurities. In all the cases when these impurities are used together with nitrogen a hole trap with a depth of 0.47 eV is observed. The concentrations and capture cross-sections of the centres were cal...

Oxygen vacancies dependent phase transition of Y{sub 2}O{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Yu, Pengfei; Zhang, Kan [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012 (China); Huang, Hao [Titanium Alloys Lab. Beijing Institute of Aeronautical Materials, Beijing 81-15 100095 (China); Wen, Mao, E-mail: Wenmao225@jlu.edu.cn [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012 (China); Li, Quan; Zhang, Wei; Hu, Chaoquan [Department of Materials Science, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012 (China); Zheng, Weitao, E-mail: WTZheng@jlu.edu.cn [Department of Materials Science, State Key Laboratory of Automotive Simulation and Control and Key Laboratory of Automobile Materials, MOE, Jilin University, Changchun 130012 (China)

2017-07-15

Highlights: • Oxygen vacancies for Y{sub 2}O{sub 3} films increase monotonously with increasing T{sub s}. • Oxygen vacancies can promote the nucleation of monoclinic phase. • That monoclinic phase with oxygen deficiency is not thermodynamic stable at high temperature. • Phase transition from monoclinic to oxygen defective occurs at high concentrations of oxygen vacancies. • High hardness just appears in Y{sub 2}O{sub 3} films with mixed phase configurations. - Abstract: Y{sub 2}O{sub 3} films have great application potential in high-temperature metal matrix composite and nuclear engineering, used as interface diffusion and reaction barrier coating owing to their excellent thermal and chemical stability, high melting point and extremely negative Gibbs formation energy, and thus their structural and mechanical properties at elevated temperature are especially important. Oxygen vacancies exist commonly in yttrium oxide (Y{sub 2}O{sub 3}) thin films and act strongly on the phase structure and properties, but oxygen vacancies dependent phase transition at elevated temperature has not been well explored yet. Y{sub 2}O{sub 3} thin films with different oxygen vacancy concentrations have been achieved by reactive sputtering through varying substrate temperature (T{sub s}), in which oxygen vacancies increase monotonously with increasing T{sub s}. For as-deposited Y{sub 2}O{sub 3} films, oxygen vacancies present at high T{sub s} can promote the nucleation of monoclinic phase, meanwhile, high T{sub s} can induce the instability of monoclinic phase. Thus their competition results in forming mixed phases of cubic and monoclinic at high T{sub s}. During vacuum annealing at 1000 °C, a critical oxygen vacancy concentration is observed, below which phase transition from monoclinic to cubic takes place, and above which phase transfer from monoclinic to the oxygen defective phase (ICDD file no. 39-1063), accompanying by stress reversal from compressive to tensile and

The annealing behavior of hydrogen implanted into Al-Si alloy

Energy Technology Data Exchange (ETDEWEB)

Ogura, Masahiko; Yamaji, Norisuke; Imai, Makoto; Itoh, Akio; Imanishi, Nobutsugu [Kyoto Univ. (Japan). Faculty of Engineering

1997-03-01

We have studied effects of not only defects but also an added elements on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5at.%Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. (author)

Hydrogen trapping in and release from tungsten: modeling and comparison with graphite with regard to its use as fusion reactor material

International Nuclear Information System (INIS)

Franzen, P.; Garcia-Rosales, C.; Plank, H.; Alimov, V.Kh.

1997-01-01

Trapping and release of deuterium implanted in tungsten is investigated by modeling the results of reemission, thermal and isothermal desorption experiments. Rate coefficients and activation energies for diffusion, trapping and detrapping are derived. Hydrogen atoms are able to diffuse deep into tungsten, establishing a solute amount of the same order of magnitude as the trapped one. This 'diffusion zone' exceeds the implantation zone by more than two orders of magnitude, even at room temperature. The solute amount of hydrogen in tungsten depends only slightly on the incident ion energy, but scales with implantation fluence. This high amount of solute hydrogen is the main difference of tungsten compared to graphite where nearly all hydrogen is trapped in the implantation zone, the solute amount being orders of magnitude lower. The resulting unlimited accumulation of hydrogen in tungsten deep in the material down to the backward surface disadvantages tungsten as fusion reactor material with regard to hydrogen recycling properties. (orig.)

Retention and features of deuterium detrapping from radiation-induced damages in steels

International Nuclear Information System (INIS)

Tolstolutskaya, G.D.; Ruzhytskiy, V.V.; Karpov, S.A.; Kopanets, I.E.

2009-01-01

The accelerators and ion-beam analysis techniques are used for simulation of displacement damage and detailed investigation of distribution profiles of damage and impurity gas atoms (especially helium and hydrogen) in the irradiation of targets for a wide ranges of doses and particle energies. The influence of preimplanted helium and heavy ion-induced damage on deuterium trapping in austenitic and ferritic/martensitic steels was studied. The results obtained for 18Cr10NiTi stainless steel show that ion-implanted deuterium is weakly trapped by defects produced in 5 keV D + displacement cascades. The effective trapping temperature interval is between 300 and 600 K. The characteristics of trapping and the temperature range of hydrogen isotopes retention in traps formed by prior implantation of helium depend on the concentration of implanted helium and on the type of defects developed. The formation of helium bubbles in 18Cr10NiTi steel causes an order of magnitude increase in the content of retained deuterium atoms in the range of temperature 300-600 K and extends the interval of effective trapping temperatures to 1000 K. Energetic heavy-ion irradiation (1.4 MeV Ar + ) has been used for modeling defect cluster formation under displacement cascade conditions to simulate fusion reactor environments. It was found that retention of hydrogen and deuterium strongly increased in this case. It is shown that the presence of a surface-passive film considerably shifts the gas release interval to higher temperatures and reduces the deuterium surface recombination coefficient by several orders of magnitude.

Reversible photo-induced trap formation in mixed-halide hybrid perovskites for photovoltaics.

Science.gov (United States)

Hoke, Eric T; Slotcavage, Daniel J; Dohner, Emma R; Bowring, Andrea R; Karunadasa, Hemamala I; McGehee, Michael D

2015-01-01

We report on reversible, light-induced transformations in (CH 3 NH 3 )Pb(Br x I 1- x ) 3 . Photoluminescence (PL) spectra of these perovskites develop a new, red-shifted peak at 1.68 eV that grows in intensity under constant, 1-sun illumination in less than a minute. This is accompanied by an increase in sub-bandgap absorption at ∼1.7 eV, indicating the formation of luminescent trap states. Light soaking causes a splitting of X-ray diffraction (XRD) peaks, suggesting segregation into two crystalline phases. Surprisingly, these photo-induced changes are fully reversible; the XRD patterns and the PL and absorption spectra revert to their initial states after the materials are left for a few minutes in the dark. We speculate that photoexcitation may cause halide segregation into iodide-rich minority and bromide-enriched majority domains, the former acting as a recombination center trap. This instability may limit achievable voltages from some mixed-halide perovskite solar cells and could have implications for the photostability of halide perovskites used in optoelectronics.

Variable-energy positron-beam studies of Ni implanted with He

International Nuclear Information System (INIS)

Lynn, K.G.; Chen, D.M.; Nielsen, B.; Pareja, R.; Myers, S.

1986-01-01

Variable-energy positron-beam studies have been made on well-annealed polycrystalline Ni samples implanted with 30-, 90-, and 180-keV 4 He ions. The positron-annihilation characteristics were measured with a solid-state Ge detector at a number of different incident-positron energies and after isochronal annealing at various temperatures. The Doppler broadening of the annihilation photons was found to be strongly influenced by the 4 He implantations. The data indicate that trapping of the positrons occurred predominantly at small He bubbles. The variation of the broadening with incident-positron energy was sensitive to the depth distribution of the traps. A diffusion model assuming a square concentration-defect profile was developed and analytically fitted to the parametrized momentum data. These fitted results were compared to Monte Carlo range calculations for 4 He in Ni, and fairly good agreement was found. This investigation demonstrates the capabilities of positron annihilation for nondestructive depth profiling in ion-implanted systems. In addition, it establishes parallels between the trapping behavior of positrons and that reported elsewhere for hydrogen, thereby augmenting the present level of understanding of the technologically important trapping of hydrogen by the bubbles

Moessbauer effect studies of the recovery of iron after heavy-ion implantation at 7 K

International Nuclear Information System (INIS)

Reintsema, S.R.; Drentje, S.A.; Waard, H. de

1978-01-01

Moessbauer effect measurements were performed with sources of 133 Xe implanted at 7 K in polycrystalline iron foils by means of an isotope separator. Information about the direct environment of an implanted radioactive probe atom is obtained through the hyperfine interaction of the daughter nucleus ( 133 Cs) with its surroundings. The Moessbauer spectra were analyzed on the basis of an earlier model, assuming three visible spectral components with high, intermediate and low hyperfine fields and recoilless fractions, respectively, and a fourth, invisible component with a recoilless fraction very close to zero. Annealing experiments showed no evidence for post-implantation recovery stage I in the iron foils, while recovery stage II only gave rise to small changes in the site occupations. These results can be explained in terms of the high energy density locally deposited in the lattice by each implanted atom, leading to stage I recovery during the very short time that is necessary for the thermal dissipation of this energy. Quantitatively, these results are confirmed by calculations of Sigmund on heavy-ion induced elastic-collision spikes in solids. After annealing at room temperature the site occupations agree with those obtained directly with room temperature implanted sources. In previous experiments it has been shown that different results are obtained for annealing and for implantation at 200 0 C. From these results the authors estimate the migration energy of vacancies in iron at 1.27 +- 0.09 eV. (Auth.)

Diffusion in a pure, high-vacancy-content crystal

International Nuclear Information System (INIS)

McKee, R.A.

1981-01-01

The idea that vacancies can follow a nonrandom walk in a solid has been developed and put into a quantitative form for diffusion in a pure, high-vacancy-content crystal. Intrinsic and tracer diffusion in a metal have been analyzed, and the electrical mobility in an ionic solid has been expressed in terms of the tracer diffusion coefficient and the separate correlation factors for atoms and vacancies. The description uses classical methods of diffusion theory, and generalized results that account for nonrandom vacancy walk have been shown to reduce to those obtained by Howard and Lidiard in a system where the vacancy moves randomly as an isolated point defect. Experimental data for carbon diffusion in fcc iron have been examined to illustrate an interstitial-vacancy analogy that was used in this analysis, and the general result has been applied specifically to discuss vacancy diffusion in Fe/sub 1-x/S

Vacancies supersaturation induced by fast neutronn irradiation in FeNi alloys

International Nuclear Information System (INIS)

Lucki, G.; Watanabe, S.; Chambron, W.; Verdoni, J.

1976-01-01

Isothermal annealings have been performed between 400 and 555 0 C with and without fast neutron (1 MeV) irradiation. Pure FeNi (50-50 at %) was irradiated in the Melousine reactor in Grenoble and FeNiMO (50-50 at % + 50 ppm.) in the IEAR 1 reactor at the Instituto de Energia Atomica in Sao Paulo. The toroidal shaped specimens were fabricated from Johnson Mathey zone refined ingots and were initially annealed at 800 0 C during 1 h in hydrogen atmosphere and then slowly cooled (4 h) inside the furnace. Magnetic After Effect Measurements (MAE) permitted the evaluation of activation energies during fast neutron irradiation (1.54eV) and without irradiation (3.14eV) for pure FeNi and respectively (1.36eV) and 2.32eV) for FeNiMO. Since the time constants of relaxation process are inversely proportional to the vacancies comcentration a quantitative evaluation of vacancies supersaturation was made it decreases from value 700 at 410 0 C to the value 40 at 190 0 C for pure FeNi and from 765 to 121 for FeNiMO in the same temperature range

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

Science.gov (United States)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Defect reactions of implanted Li in ZnSe observed by $\\beta$-NMR

CERN Document Server

Kroll, F; Füllgrabe, M; Mai, F; Marbach, K; Peters, D; Geithner, W; Kappertz, S; Keim, M; Kloos, S; Wilbert, S; Neugart, R; Lievens, P; Georg, U

2001-01-01

Using $\\beta$-radiation-detected nuclear magnetic resonance ($\\beta$-NMR), we investigated the microscopic behavior of implanted $^{8}$Li in nominally undoped ZnSe crystals. From the temperature-dependent amplitudes of high-resolution NMR spectra we conclude a gradual interstitial-to-substitutional site change between 200 and 350 K. This is in accordance with earlier emission channeling results. We argue that this conversion proceeds via Li$_{i}^+$ + V$_{\\textrm{Zn}}^{2-}$ to ${\\textrm{Li}}_{\\textrm{Zn}}^{-}$ and involves implantation-related Zn vacancies. (13 refs).

Hidden in the light: Magnetically induced afterglow from trapped chameleon fields

International Nuclear Information System (INIS)

Gies, Holger; Mota, David F.; Shaw, Douglas J.

2008-01-01

We propose an afterglow phenomenon as a unique trace of chameleon fields in optical experiments. The vacuum interaction of a laser pulse with a magnetic field can lead to a production and subsequent trapping of chameleons in the vacuum chamber, owing to their mass dependence on the ambient matter density. Magnetically induced reconversion of the trapped chameleons into photons creates an afterglow over macroscopic timescales that can conveniently be searched for by current optical experiments. We show that the chameleon parameter range accessible to available laboratory technology is comparable to scales familiar from astrophysical stellar energy-loss arguments. We analyze quantitatively the afterglow properties for various experimental scenarios and discuss the role of potential background and systematic effects. We conclude that afterglow searches represent an ideal tool to aim at the production and detection of cosmologically relevant scalar fields in the laboratory

Amplification at λ ∼ 2.8 A on Xe(L),(2s-bar2p-bar) double-vacancy states produced by 248 nm excitation of Xe clusters in plasma channels

International Nuclear Information System (INIS)

Borisov, Alex B; Song Xiangyang; Zhang Ping; Dasgupta, Arati; Davis, Jack; Kepple, Paul C; Dai Yang; Boyer, Keith; Rhodes, Charles K

2005-01-01

Xe(L),(2s-bar2p-bar) double-vacancy states undergo strong amplification in relativistic self-trapped plasma channels on 3d → 2p transitions in the λ = 2.78-2.81 A region. The 2 P 3/2 → 2 S 1/2 component at λ ≅ 2.786 A exhibits saturated amplification demonstrated by both (1) the observation of spectral hole-burning in the spontaneous emission profile and (2) the correlated enhancement of 3p → 2s cascade transitions ( 2 S 1/2 → 2 P j ; j = 1/2, 3/2) at λ = 2.558 and λ = 2.600 A. The condition of saturation places a lower limit of ∼10 17 W cm -2 on the intensity of the x-ray beam produced by the amplification in the channel. The anomalous strength of the amplification signalled by the saturation mirrors the equivalently anomalous behaviour observed for all 3d → 2p transitions corresponding to 2p-bar) single-vacancy Xe q+ arrays (q = 31, 32, 34, 35, 36) that exhibit gain. The conspicuous absence of amplification involving states with (2p-bar) 2 double-vacancy configurations suggests the operation of a selective interaction that enhances the production of 2s-bar2p-bar states. Overall, the generation of double-vacancy states of this genre demonstrates that an excitation rate approaching ∼1 W/atom for ionic species is achievable in self-trapped plasma channels

Manipulation and light-induced agglomeration of carbon nanotubes through optical trapping of attached silver nanoparticles

International Nuclear Information System (INIS)

Shi Chao; Zhang Yi; Gu, Claire; Seballos, Leo; Zhang, Jin Z

2008-01-01

A simple experimental method has been demonstrated for manipulating multi-walled carbon nanotube (MWCNT) bundles through the optical trapping of attached silver nanoparticles (SNPs). In our experiments, without the SNPs, the MWCNTs cannot be trapped due to their irregular shapes and large aspect ratio. However, when mixed with SNPs, the MWCNTs can be successfully trapped along with the SNPs using a TEM 00 mode laser at 532 nm. This is attributed to the optical trapping of the SNPs and attractive interaction or binding between the SNPs and MWCNTs due to electrostatic and van der Waals forces. Therefore, optical manipulation of MWCNT bundles is achieved through the manipulation of the attached silver nanoparticles/aggregates. In addition, we have observed the phenomenon of light-induced further agglomeration of SNPs/MWCNTs which could potentially be exploited for fabricating patterned MWCNT films for future nanoscale devices and other applications

Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

International Nuclear Information System (INIS)

Zupac, D.; Galloway, K.F.; Khosropour, P.; Anderson, S.R.; Schrimpf, R.D.

1993-01-01

An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

Implantation driven permeation behavior of deuterium through pure tungsten

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Hirofumi E-mail: nakamura@tpl.tokai.jaeri.go.jp; Hayashi, Takumi; Nishi, Masataka; Arita, Makoto; Okuno, Kenji

2001-09-01

Implantation driven permeation behavior of deuterium through pure tungsten has been investigated to estimate the amount of tritium permeation through its barrier in a thermo-nuclear fusion device. The permeation experiments were performed on pure tungsten foil of 25 {mu}m thickness under conditions of incident flux of 1.9x10{sup 18}-1.1x10{sup 19} D{sup +}/m{sup 2}s, incident ion energy of 200-2000 eV, and specimen temperature of 512-660 K. As a result of this steady-state permeation experiment, the rate-determining process of deuterium permeation was found to be controlled by diffusion at both implanted and permeated sides. On the other hand, transient permeation was strongly affected by trap effect in the specimen. Simulation analysis using TMAP code on transient permeation behavior indicates the existence of a trap site with a trap energy of nearly 1eV and with a trap density of over several ten's ppm in tungsten.

Implantation driven permeation behavior of deuterium through pure tungsten

International Nuclear Information System (INIS)

Nakamura, Hirofumi; Hayashi, Takumi; Nishi, Masataka; Arita, Makoto; Okuno, Kenji

2001-01-01

Implantation driven permeation behavior of deuterium through pure tungsten has been investigated to estimate the amount of tritium permeation through its barrier in a thermo-nuclear fusion device. The permeation experiments were performed on pure tungsten foil of 25 μm thickness under conditions of incident flux of 1.9x10 18 -1.1x10 19 D + /m 2 s, incident ion energy of 200-2000 eV, and specimen temperature of 512-660 K. As a result of this steady-state permeation experiment, the rate-determining process of deuterium permeation was found to be controlled by diffusion at both implanted and permeated sides. On the other hand, transient permeation was strongly affected by trap effect in the specimen. Simulation analysis using TMAP code on transient permeation behavior indicates the existence of a trap site with a trap energy of nearly 1eV and with a trap density of over several ten's ppm in tungsten

Thermodesorption examination of interaction of hydrogen with traps in silver

International Nuclear Information System (INIS)

Gabis, I.E.; Kurdyumov, A.A.; Ovsvannikova, T.A.

1992-01-01

The authors have previously examined the interaction of hydrogen with silver by the methods of thermal desorption spectrometry (TDS) and hydrogen permeability. The results showed that the TDS spectra contained a high-temperature phase linked with hydrogen which left the volume of the specimen during heating. It was assumed that hydrogen was captured and released by structural defects acting as traps. These traps can be represented by vacancies and their clusters. In this work, the high-temperature desorption of hydrogen from silver was studied. The experimental setup consisted of an all-metal vacuum system, a time-of-flight mass spectrometer, a DVK-2M computing system, and a Camac system. The described model of a local equilibrium should be regarded only as a first approximation. The results provide unambiguous information on the processes of permeability and desorption, and make it possible to assume that the formation of the high-temperature phase in TD spectra was caused by the generation of hydrogen from the traps. The parameters of the interaction of hydrogen with the traps were determined by the concentration wave method. 7 refs., 2 figs

Implanted He retention and release from boronized layers

International Nuclear Information System (INIS)

Doyle, B.L.; Walsh, D.S.; Wampler, W.R.

1992-01-01

3 He has been implanted at an energy of 3 keV into amorphous hydrogenated boron-carbon (a-BC) films deposited by rf sputtering onto single crystal Si substrates. The initial composition of the films was analyzed by nuclear-enhanced backscattering spectrometry to be B 2 C with ∝20% H and ∝10% O. The areal density of the implanted and retained 3 He was measured in situ by a new ion beam analysis technique using the 3 He( 3 He, pp) three-body nuclear reaction. The He trapping or pumping efficiency at room temperature is only 3.4% for low fluence implants and the a-BC layer saturates with He at a fluence of 5x10 17 He/cm 2 . At this saturation fluence, only 3.1x10 15 He/cm 2 is retained in the film. Isochronal annealing of the implanted samples reveals a distributed release of implanted He at ∝200deg C, which corresponds to a trap activation energy of 1.65±0.25 eV. 3 He was trapped less efficiently at 250deg C than at room temperature and exhibited a saturated retention of 8.6x10 14 He/cm 2 . These results indicate that wall pumping should play only a minor role in the interpretation of the Textor He-pump experiment carried out earlier this year. The results also show that the unintentional deposition of a-Bc, onto He pumping plates could adversely affect the operation of such devices, and should therefore be avoided. (orig.)

Microstructure evolution characteristics induced by oxygen vacancy generation in anatase TiO2 based resistive switching devices

Science.gov (United States)

Liu, Chen; Gao, Bin; Huang, Peng; Kang, Jinfeng

2017-03-01

In this work, first principle calculations are employed to study the microstructure characteristics of the anatase TiO2 resistive switching material associated with the generation of oxygen vacancy (V o) based nanofilaments during the switching process. The calculations indicate that both the magnéli phase Ti4O7 and V o-defect phase of anatase TiO2 may be formed with the generation of oxygen vacancies during the forming and SET processes. Based on the calculations, a new physical insight is proposed to clarify the microstructure evolution characteristics of the anatase TiO2 resistive switching material and the correlation with resistive switching behaviors. During the forming or SET process, the anatase TiO2 is first excited to a transition state with the generation of oxygen vacancies, then fully relaxes to a stable V o-defect state. This V o-defect state may either recover to the original state with the recombination of the oxygen vacancies, which causes the reversible resistive switching behavior, or further transform to a much more stable state—the magnéli phase Ti4O7, through a phase transition process with the generation of many more oxygen vacancies. The phase transition from V o- defective anatase phase to magnéli phase Ti4O7 causes the failure of the resistive switching due to the significantly reduced possibility of the reversible phase transition from the magnéli phase to the anatase phase, compared with the possibility of the recombination from the V o-defective anatase.

Deuterium ion irradiation damage and deuterium trapping mechanism in candidate stainless steel material (JPCA2) for fusion reactor

International Nuclear Information System (INIS)

Ashizuka, Norihiro; Kurita, Takaaki; Yoshida, Naoaki; Fujiwara, Tadashi; Muroga, Takeo

1987-01-01

An improved austenitic stainless steel (JPCA), a candidate material for fusion reactor, is irradiated at room temperature with deuterium ion beams. Desorption spectra of deuterium gas is measured at various increased temperatures and defects formed under irradiation are observed by transmission electron microscopy to determine the mechanism of the thermal release of deuteriums and the characteristics of irradiation-induced defects involved in the process. In the deuterium deportion spectra observed, five release stages are found to exist at 90 deg C, 160 deg C, 220 deg C, 300 deg C and 400 deg C, referred to as Stage I, II, III, IV and V, respectively. Stage I is interpreted as representing the release of deuteriums trapped in point defects (presumably vacancies) formed under irradiation. The energy of desorption from the trapping sites is estimated at 0.8 eV. Stage II is concluded to be associated with the release of deuteriums trapped in a certain kind of existing defects. Stage III involves the release of deuteriums that are trapped in dislocations, dislocation loops or dislocated portions of stacking fault tetrahedra. This release occurs significantly in processed materials and other materials irradiated with high energy ion beams that may cause cascade damage. Stage IV is interpreted in terms of thermal decomposition of small deuterium clusters. Stage V is associated with the decomposition of rather large deuterium clusters grown on the {111} plane. (Nogami, K.)

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

International Nuclear Information System (INIS)

Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2004-01-01

Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that uses the interstitial-vacancy (I-V) pair as a building block to describe the amorphous phase. I-V pairs are locally characterized by the number of neighbouring I-V pairs. This feature captures the damage generation and the dynamical annealing during ion implantation, and also explains the annealing behaviour of amorphous layers and amorphous pockets

A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

Energy Technology Data Exchange (ETDEWEB)

Pingault, Timothee; Pokam-Kuisseu, Pauline Sylvia; Ntsoenzok, Esidor [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Blondeau, Jean-Philippe [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Universite d' Orleans, Chateau de la Source, 45100 Orleans (France); Ulyashin, Alexander [SINTEF, Forskningsveien 1, 0314 Oslo (Norway); Labrim, Hicham; Belhorma, Bouchra [CNESTEN, B.P. 1382 R.P., 10001 Rabat (Morocco)

2016-12-15

In this work, we studied the potential use of low-energy hydrogen implantation as a guide for the stress-induced cleavage. Low-energy, high fluence hydrogen implantation in silicon leads, in the right stiffening conditions, to the detachment of a thin layer, around a few hundreds nm thick, of monocrystalline silicon. We implanted monocrystalline silicon wafers with low-energy hydrogen, and then glued them on a cheap metal layer. Upon cooling down, the stress induced by the stressor layers (hardened glue and metal) leads to the detachment of a thin silicon layer, which thickness is determined by the implantation energy. We were then able to clearly demonstrate that, as expected, hydrogen oversaturation layer is very efficient to guide the stress. Using such process, thin silicon layers of around 710 nm-thick were successfully detached from low-energy implanted silicon wafers. Such layers can be used for the growth of very good quality monocrystalline silicon of around 50 μm-thick or less. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A simple model for the trapping of deuterons in a carbon target

International Nuclear Information System (INIS)

Erents, S.K.; Hotston, E.S.

1980-01-01

A model is proposed for the trapping of deuterons in an annealed carbon target. The deuterons are assumed to be lodged in traps which are created by the ion beam implanting the deuterons. There is a saturation trap density of 6.8 x 10 22 cm -3 . A deuteron in a region of the target where all the traps are filled is free to execute a random walk until it finds a vacant trap or is released from the target surface. The number of ions trapped per unit area of the target surface has been calculated as a function of ion fluence and is in good agreement with the experimental results. (orig.)

Electron trapping in neutron-irradiated very thin films of Al2O3

International Nuclear Information System (INIS)

Srivastava, P.C.; Bardhan, A.R.

1979-01-01

Oxide layers of thicknesses less than 100 A have been prepared by thermal-oxidation of a base metal electrode film of aluminium. These films were then neutron-irradiated from a laboratory Ra-Be source to a fluence of approximately 10 11 neutrons cm -2 and the sandwich structure, Al-Al 2 O 3 -Au, was completed by depositing a thin metal film of gold over the irradiated oxide layer. D.C. steady and transient flow through the sandwich structures have been studied. Results obtained in the experiments with irradiated sandwiches have been compared with unirradiated ones to show that traps are introduced because of the damage caused by the incident neutrons. Transient voltage measurement across the junction gives a trap density of approximately 10 18 cm -3 . A capture cross-section of the order 10 -28 cm 2 is estimated for the traps. It is found that the (identified) traps are uniformly distributed within an energy of 0.099 eV below the conduction band edge of aluminium oxide. The physical nature of the traps is discussed by comparing the capture cross-sections of the physically known trapping centres. The possibility of vacancies or F-centres acting as traps (for the identified ones) has been suggested. (author)

Comparison of naturally occurring and ligature-induced peri-implantitis bone defects in humans and dogs.

NARCIS (Netherlands)

Schwarz, F.; Herten, M. van; Sager, M.; Bieling, K.; Sculean, A.; Becker, J.

2007-01-01

OBJECTIVES: The aim of the present study was to evaluate and compare naturally occuring and ligature-induced peri-implantitis bone defects in humans and dogs. MATERIAL AND METHODS: Twenty-four partially and fully edentulous patients undergoing peri-implant bone augmentation procedures due to

Mild degradation processes in ZnO-based varistors: the role of Zn vacancies

Science.gov (United States)

Ponce, M. A.; Macchi, C.; Schipani, F.; Aldao, C. M.; Somoza, A.

2015-03-01

The effects of a degradation process on the structural and electrical properties of ZnO-based varistors induced by the application of dc bias voltage were analysed. Capacitance and resistance measurements were carried out to electrically characterize the polycrystalline semiconductor before and after different degrees of mild degradation. Vacancies' changes in the varistors were studied with positron annihilation lifetime spectroscopy. Variations on the potential barrier height and effective doping concentration were determined by fitting the experimental data from impedance spectroscopy measurements. These results indicate two different stages in the degradation process consistent with vacancy-like concentration changes.

Oxygen vacancy chain and conductive filament formation in hafnia

Science.gov (United States)

Xue, Kan-Hao; Miao, Xiang-Shui

2018-04-01

The stability and aggregation mechanisms of oxygen vacancy chains are studied for hafnia using self-energy corrected density functional theory. While oxygen vacancies tend not to align along the c-axis of monoclinic HfO2, oxygen vacancy chains along a-axis and b-axis are energetically favorable, with cohesive energies of 0.05 eV and 0.03 eV per vacancy, respectively. Nevertheless, with an increase of the cross section area, intensive oxygen vacancy chains become much more stable in hafnia, which yields phase separation into Hf-clusters and HfO2. Compared with disperse single vacancy chains, intensive oxygen vacancy chains made of 4, 6, and 8 single vacancy chains are energetically more favorable by 0.17, 0.20, and 0.30 eV per oxygen vacancy, respectively. On the other hand, while a single oxygen vacancy chain exhibits a tiny electronic energy gap of around 0.5 eV, metallic conduction emerges for the intensive vacancy chain made of 8 single vacancy chains, which possesses a filament cross section area of ˜0.4 nm2. This sets a lower area limit for Hf-cluster filaments from metallic conduction point of view, but in real hafnia resistive RAM devices the cross section area of the filaments can generally be much larger (>5 nm2) for the sake of energy minimization. Our work sets up a bridge between oxygen vacancy ordering and phase separation in hafnia, and shows a clear trend of filament stabilization with larger dimensions. The results could explain the threshold switching phenomenon in hafnia when a small AFM tip was used as the top electrode, as well as the undesired multimode operation in resistive RAM cells with 3 nm-thick hafnia.

Hydrogen and helium in metals: positron lifetime experiments. Quarterly report 3. quarter 1987

International Nuclear Information System (INIS)

Rajainmaeki, Hannu.

1987-09-01

This thesis reviews a new approach to studying the role of hydrogen and helium in defect recovery of metals by the positron lifetime technique. A cryostat has been built at the University of Jyvaeskylae for irradiating and/or implaning solids by high-energy proton or helium beams from the MC-20 cyclotron. The samples can be kept continuously below 20 K and the isochronal annealings and the subsequent positron lifetime measurements are carried ou in the same cryostat after the irradiations. During the implantations below 20 K both impuities (H or He) and Frenkel pairs are produced simultaneously. By measuring positron lifetimes during the annealing detailed information is obtained about radiation damage, impurity-defect interactions, lattice defect annealing, void nucleation and formation of helium bubbles. In this work positron lifetime spectroscopy has been utilized for the first time to study defect recovery below the liquid nitrogen temperature (77 K). The annealing stages are investigated in aluminium, nickel and molybdenum in the temperature range 20-700 K. Hydrogen is found to get trapped at vacancies in all the studied metals with binding energies 0.53+-0.04 and 1.6+-0.1 eV, respectively. Trapped hydrogen retards the vacancy migration in Al and Mo, while H-vancancy pairs dissociate in Ni below the free vacancy migration stage. helium gets deeply trapped at vacancies in Al and migrates substitutionally with the activation energy of 1.3+-0.1 eV. Helium-vacancy pairs are observed to nucleate into clusters and form helium bubbles which are stable up to the Al melting temperature. The growth mechanisms for the bubbles are established as thermal vacancy absorption and bubble migration/coalescence

Non-uniformly functionalized titanium carbide-based MXenes as an anchoring material for Li-S batteries: A first-principles calculation

Science.gov (United States)

Sim, Eun Seob; Chung, Yong-Chae

2018-03-01

In this study, the influence of the non-uniform surface of F- and O-functionalized Ti2C on the anchoring behavior of lithium polysulfide (LiPS) is investigated using density functional theory. In order to consider the non-uniform surface, the substitutional, vacancy, and S-trapped sites of F- and O-functionalized Ti2C are designed. The anchoring behavior is investigated considering the adsorption energy of LiPS, reactivity between Li atoms and the substrate, and the reduction state of the S atoms. On the F-substitutional site of the O-functionalized surface, it is confirmed that the suppressing mechanism changes from the neutralization of S atoms to the anchoring of LiPS. However, too strong of an interaction between Ti atoms exposed at the vacancy site and S atoms induces trapping of the S atom at the vacancies of both F- and O-functionalized surfaces. As a result of the trapping of the S atom, the use of active material decreases. In addition, the S-trapped site originated from the vacancy site does not affect the suppressing mechanism. In conclusion, to optimize the Ti2C-based MXene as an anchoring material for Li-S batteries, the preparation process should be focused on eliminating the vacancy of functional groups.

Vacancy decay in endohedral atoms

International Nuclear Information System (INIS)

Amusia, M. Ya.; Baltenkov, A. S.

2006-01-01

It is demonstrated that the fullerene shell dramatically affects the radiative and Auger vacancy decay of an endohedral atom A-C 60 . The collectivized electrons of the C 60 shell add new possibilities for radiative and nonradiative decays similar to that in ordinary atoms where the vacancies in the initial and final state almost always belong to different subshells. It is shown that the smallness of the atomic shell radii as compared to that of the fullerene shell provides an opportunity to derive the simple formulas for the probabilities of the electron transitions. It is shown that the radiative and Auger (or Koster-Kronig) widths of the vacancy decay due to electron transition in the atom A in A-C 60 acquire an additional factor that can be expressed via the polarizability of the C 60 at transition energy. It is demonstrated that due to an opening of the nonradiative decay channel for vacancies in subvalent subshells the decay probability increases by five to six orders of magnitude

Depth-selective 2D-ACAR and coincidence Doppler investigation of embedded Au nanocrystals in MgO

International Nuclear Information System (INIS)

Eijt, S.W.H.; Veen, A. van; Falub, C.V.; Schut, H.; Huis, M.A. van; Mijnarends, P.E.

2004-01-01

We present a depth-selective 2D-ACAR and two-detector Doppler broadening study on Au nanocrystals in monocrystalline MgO(100), produced in sub-surface layers by ion implantation and subsequent thermal annealing to temperatures beyond the stability range of vacancy clusters in MgO. In contrast to the case of Li nanocrystals, it was found that positrons do not trap inside the Au nanocrystals, but only in defects at the nanocrystal-to-host interface (attached vacancy clusters). This is interpreted in terms of the positron affinity of Au, MgO and the defects. (orig.)

Depth-selective 2D-ACAR and coincidence Doppler investigation of embedded Au nanocrystals in MgO

Energy Technology Data Exchange (ETDEWEB)

Eijt, S.W.H.; Veen, A. van; Falub, C.V.; Schut, H.; Huis, M.A. van [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Mijnarends, P.E. [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Dept. of Physics, Northeastern Univ., Boston, MA (United States)

2004-07-01

We present a depth-selective 2D-ACAR and two-detector Doppler broadening study on Au nanocrystals in monocrystalline MgO(100), produced in sub-surface layers by ion implantation and subsequent thermal annealing to temperatures beyond the stability range of vacancy clusters in MgO. In contrast to the case of Li nanocrystals, it was found that positrons do not trap inside the Au nanocrystals, but only in defects at the nanocrystal-to-host interface (attached vacancy clusters). This is interpreted in terms of the positron affinity of Au, MgO and the defects. (orig.)

Trapped Bose-Einstein condensates with Planck-scale induced deformation of the energy-momentum dispersion relation

International Nuclear Information System (INIS)

Briscese, F.

2012-01-01

We show that harmonically trapped Bose-Einstein condensates can be used to constrain Planck-scale physics. In particular we prove that a Planck-scale induced deformation of the Minkowski energy-momentum dispersion relation δE≃ξ 1 mcp/2M p produces a shift in the condensation temperature T c of about ΔT c /T c 0 ≃10 -6 ξ 1 for typical laboratory conditions. Such a shift allows to bound the deformation parameter up to |ξ 1 |≤10 4 . Moreover we show that it is possible to enlarge ΔT c /T c 0 and improve the bound on ξ 1 lowering the frequency of the harmonic trap. Finally we compare the Planck-scale induced shift in T c with similar effects due to interboson interactions and finite size effects.

Defect-impurity interactions in ion-implanted metals

International Nuclear Information System (INIS)

Turos, A.

1986-01-01

An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

Techniques for the research on mass deposition effects in the bio-materials induced by heavy ion implantation

International Nuclear Information System (INIS)

Yuan Shibin; Wei Zengquan; Li Qiang

2002-01-01

Researchers have used heavy ion beams to implant small biomolecules, followed by advanced instrumental analysis to make preliminary studies on mass deposition induced by ion implantation. But research reports on the biological effects, i.e. mass deposition effects induced by mass deposition in living tissues, cells and macro-biomolecules have not been delivered hitherto. In the near future radioactive heavy ion beams will be possible to implant living cells and biomolecules, and auto-radiography, radioactive measurements and molecular biological techniques will be employed to further studies on the effects

Annealing behaviour of high-dose rare-gas implantations into silicon

International Nuclear Information System (INIS)

Williams, J.S.; Grant, W.A.

1976-01-01

The annealing behaviour of 13 -10 17 ions/cm 2 is investigated by RBS and channelling techniques. There appears to be a strong correlation between the degree and nature of the post-anneal (above 650 0 C) remnant Si disorder, the implanted gas concentration and subsequent out-diffusion of the gas species. During the out-diffusion process a fraction of the gas (always less than 10 15 cm -2 ) remains trapped at, or beyond, the ion range and some of the diffusing gas becomes trapped near the target surface; for implantation doses below 10 15 cm -2 , no out-diffusion is observed up to 850 0 C. This behaviour is discussed in terms of the defect structure of the recrystallized implant layer. (author)

Ion irradiation studies on the void swelling behavior of a titanium modified D9 alloy

Science.gov (United States)

Balaji, S.; Mohan, Sruthi; Amirthapandian, S.; Chinnathambi, S.; David, C.; Panigrahi, B. K.

2015-12-01

The sensitivity of Positron Annihilation Spectroscopy (PAS) for probing vacancy defects and their environment is well known. Its applicability in determination of swelling and the peak swelling temperature was put to test in our earlier work on ion irradiated D9 alloys [1]. Upon comparison with the peak swelling temperature determined by conventional step height measurements it was found that the peak swelling temperature determined using PAS was 50 K higher. It was conjectured that the positrons trapping in the irradiation induced TiC precipitation could have caused the shift. In the present work, D9 alloys have been implanted with 100 appm helium ions and subsequently implanted with 2.5 MeV Ni ions up to peak damage of 100 dpa. The nickel implantations have been carried out through a range of temperatures between 450 °C and 650 °C. The evolution of cavities and TiC precipitates at various temperatures has been followed by TEM and this report provides an experimental verification of the conjecture.

Trapping of hydrogen isotopes in molybdenum and niobium predamaged by ion implantation

International Nuclear Information System (INIS)

Bottiger, J.; Picraux, S.T.; Rud, N.; Laursen, T.

1977-01-01

The trapping of hydrogen isotopes at defects in Mo and Nb have been studied. Ion beams of 11- and 18-keV He + , 55-keV O + and Ne + , and 500-keV Bi + were used to create defects. Subsequently H or D was injected at room temperature by use of molecular beams of 16-keV H + 2 and D + 2 . Appreciable enhancements were observed in the amount of H and D retained within the near-surface region of predamaged samples compared to samples with no prior damage. The total amount of D retained within the near-surface region was measured by means of the nuclear reaction D( 3 He,p) 4 He, and H depth profiles were measured via a resonance in the nuclear reaction 1 H( 19 F,αγ) 16 O. The H profiles correlate with the predicted predamaging ion profiles; however, appreciable tails to deeper depths for the hydrogen profiles are observed for the heavier predamaging ions. For a given predamage ion fluence, the amount of trapped deuterium increases linearly with incident deuterium fluence until a saturation in the enhancement is reached. The amount of deuterium trapped when saturation occurs increases with increasing predamage fluence. The experiments indicate that lighter ions, which create fewer primary displacements, are more effective per displacement in trapping hydrogen. An appreciable release of hydrogen is obtained upon annealing at 200 and 300 degreeC, and a preannealing experiment indicates this is due to detrapping rather than to any loss of traps. These temperatures suggest a much higher binding energy for the trapped hydrogen isotopes (approx.1.5 eV) than the available evidence gives for simple H-defect binding energies (approximately-less-than0.3 eV). The detailed trapping mechanism is not known. However, it is suggested on the basis of the high binding energies and the high concentrations of hydrogen which can be trapped that clusters of hydrogen may be formed

Gamma ray induced sensitization in CaSO4:Dy and competing trap model

International Nuclear Information System (INIS)

Nagpal, J.S.; Kher, R.K.; Gangadharan, P.

1979-01-01

Gamma ray induced sensitization in CaSO 4 :Dy has been compared (by measurement of TL glow curves) for different temperatures during irradiation (25 0 , 120 0 and 250 0 C). Enhanced sensitization at elevated temperatures seems to support the competing trap model for supralinearity and sensitization in CaSO 4 :Dy. (author)

Neutrophil Responses to Sterile Implant Materials.

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Siddharth Jhunjhunwala

Full Text Available In vivo implantation of sterile materials and devices results in a foreign body immune response leading to fibrosis of implanted material. Neutrophils, one of the first immune cells to be recruited to implantation sites, have been suggested to contribute to the establishment of the inflammatory microenvironment that initiates the fibrotic response. However, the precise numbers and roles of neutrophils in response to implanted devices remains unclear. Using a mouse model of peritoneal microcapsule implantation, we show 30-500 fold increased neutrophil presence in the peritoneal exudates in response to implants. We demonstrate that these neutrophils secrete increased amounts of a variety of inflammatory cytokines and chemokines. Further, we observe that they participate in the foreign body response through the formation of neutrophil extracellular traps (NETs on implant surfaces. Our results provide new insight into neutrophil function during a foreign body response to peritoneal implants which has implications for the development of biologically compatible medical devices.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-01-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Effects on cuytoskeleton system in pollen tube of pinus thunbergii induced by ion beam implantation

International Nuclear Information System (INIS)

Huang Qunce; Liang Qiuxia; Li Guopin

2008-01-01

The damage of the cytoskeleton system in the pollen and the pollen tube of Pinus thunbergii induced by ion beam implantation were researched. The results showed that the disorganization of the micro-tubules in the pollen tube was produced by N + implantation. The abnormal states of the pollen tube in morphology were very correlative with the abnormality of the cytoskeleton system. N + implantation was responsible for morphological abnormalities in the pollen tubes. There was a distinct correlation between the damage effects and the ion implantation dose. The add of dose caused more obvious damage effects. Furthermore, the state of the cytoskeleton system in the pollen tube was influenced by the ion implantation. The impact grade depended also on the ion implantation dose. (authors)

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations