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Sample records for transparent silicon oxynitride

  1. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  2. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  3. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  4. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  5. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  6. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

    2000-11-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

  7. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    International Nuclear Information System (INIS)

    Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

    2000-01-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

  8. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  9. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    Science.gov (United States)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  10. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  11. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  12. Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

    Science.gov (United States)

    Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

    2000-01-01

    A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

  13. Methods of forming aluminum oxynitride-comprising bodies, including methods of forming a sheet of transparent armor

    Science.gov (United States)

    Chu, Henry Shiu-Hung [Idaho Falls, ID; Lillo, Thomas Martin [Idaho Falls, ID

    2008-12-02

    The invention includes methods of forming an aluminum oxynitride-comprising body. For example, a mixture is formed which comprises A:B:C in a respective molar ratio in the range of 9:3.6-6.2:0.1-1.1, where "A" is Al.sub.2O.sub.3, "B" is AlN, and "C" is a total of one or more of B.sub.2O.sub.3, SiO.sub.2, Si--Al--O--N, and TiO.sub.2. The mixture is sintered at a temperature of at least 1,600.degree. C. at a pressure of no greater than 500 psia effective to form an aluminum oxynitride-comprising body which is at least internally transparent and has at least 99% maximum theoretical density.

  14. Ultraviolet transparent silicon oxynitride waveguides for biochemical microsystems

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Friis, Peter; Hübner, Jörg

    2001-01-01

    The UV wavelength region is of great interest in absorption spectroscopy, which is employed for chemical analysis, since many organic compounds absorb in only this region. Germanium-doped silica, which is often preferred as the waveguide core material in optical devices for telecommunication....... The applicability of these waveguides was demonstrated in a biochemical microsystem consisting of multimode buried-channel SiOxNy waveguides that were monolithically integrated with microfluidic channels. Absorption measurements of a beta -blocking agent, propranolol, at 212-215 nm were performed. The detection...

  15. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  16. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  17. Physical and electrical characteristics of silicon oxynitride films with various refractive indices

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan [Macronix International Co. Ltd, No 16, Li-Hsin Road, Hsinchu Science Park, Hsinchu 300, Taiwan (China); Lo, Yun-Shan; Wu, Tai-Bor, E-mail: jhliao@mxic.com.t [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2009-09-07

    This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

  18. Physical and electrical characteristics of silicon oxynitride films with various refractive indices

    International Nuclear Information System (INIS)

    Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan; Lo, Yun-Shan; Wu, Tai-Bor

    2009-01-01

    This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

  19. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  20. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  1. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Directory of Open Access Journals (Sweden)

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  2. Quantitative characterization of silicon- and aluminium oxynitride films produced by reactive dc-magnetron sputtering

    International Nuclear Information System (INIS)

    Dreer, S.

    2000-05-01

    The deposition of aluminum and silicon oxynitride films by reactive dc-magnetron sputtering was systematically planned by design of experiments, carried out and evaluated with the application of specialized statistics software. The influence of the deposition parameters on the resulting films was evaluated by multiple regression analysis. With the obtained data a model of the deposition process for the quantitative prediction of the deposition parameters necessary to obtain films with desired composition was built. This is also of technological importance, since the physical properties of the films strongly depend on their composition. Furthermore, the long term repeatability of the deposition process was implemented into the model. A precise and economic way for quantitative bulk analysis of silicon/aluminum, oxygen and nitrogen based on EPMA was presented and the use of data gained by the latter method is discussed for the calculation of relative sensitivity factors for SIMS and hf-SNMS. Advantages and disadvantages of SIMS, hf-SNMS, hf-GD-OES, and sputter AES were compared. The combination FT-IR/EPMA/SIMS at present offers the best possibility for a quantitative bulk and in depth distribution analysis of such films in the range of 20 to 1000 nm thickness. The films were also characterized by XRD and PAA. The refractive index and the growth rate of the films were determined by spectroscopic ellipsometry. With indentation by a nano hardness tester the hardness and the Young's modulus of the films were obtained. The results of these measurements were evaluated by statistical software. The dependencies of the physical properties on the deposition parameters and on the film thickness were evaluated and quantified. Furthermore, the dependencies of the physical properties on the film composition represented by the oxygen content were evaluated. (author)

  3. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  4. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  5. Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

    International Nuclear Information System (INIS)

    Fainer, N.I.; Kosinova, M.L.; Maximovsky, E.A.; Rumyantsev, Yu.M.; Kuznetsov, F.A.; Kesler, V.G.; Kirienko, V.V.

    2005-01-01

    Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO 2 and α-Si 3 N 4 . These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the α-Si 3 N 4 phase increases

  6. Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Fainer, N.I. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation)]. E-mail: nadezhda@che.nsk.su; Kosinova, M.L. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Maximovsky, E.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Rumyantsev, Yu.M. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kuznetsov, F.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation); Kirienko, V.V. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation)

    2005-05-01

    Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si{sub 2}NH(CH{sub 3}){sub 6} (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO{sub 2} and {alpha}-Si{sub 3}N{sub 4}. These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the {alpha}-Si{sub 3}N{sub 4} phase increases.

  7. Preparation and luminescence properties of Eu{sup 2+}doped {gamma}-aluminum oxynitride transparent ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fang; Yuan, Xianyuan; Wang, Shaohua [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai (China); Wang, Shiwei, E-mail: swwang51@mail.sic.ac.cn [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai (China)

    2013-01-15

    Eu{sup 2+} doped {gamma}-AlON transparent ceramics have been prepared by the solid-state reaction sintering method. The influences of Eu concentration on both strength, transparency and luminescence properties of the as-prepared samples were discussed. The strength and transparency decreased as Eu content increased. Two bands were observed in the emission spectrum of each sample. One (B{sub 1}) was narrow and centered at around 401 nm, the other (B{sub 2}) was comparatively broader, and the location of its center as well as the intensity ratio of peak values of B{sub 2} to that of B{sub 1} varied with Eu content. - Highlights: Black-Right-Pointing-Pointer Eu{sub 2}O{sub 3} was an effective sintering aid in fabrication of transparent {gamma}-AlON ceramics. Black-Right-Pointing-Pointer Eu-doped transparent {gamma}-AlON ceramics exhibited broad emission spectra composed of two bands. Black-Right-Pointing-Pointer The relationship between crystal position of Eu{sup 2+} ions and luminescent properties was given.

  8. Oxynitride glasses: a review

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, A.R.; Clausell, C.; Barba, A.

    2016-07-01

    Oxynitride glasses are special types of silicates or silicoaluminates which have been the object of many studies over the last forty years. They can be prepared by means of various complex methods, leading to variable levels of nitrogen incorporation, though in all cases giving limited transparency in the visible range. More recently, a new family of oxynitride glasses incorporating fluorine has been investigated. This paper outlines the effect of composition, in particular nitrogen and fluorine content, on properties such as glass transition temperature, hardness, Young's modulus, compactness and molar volume. (Author)

  9. Silicon oxynitrides of KCC-1, SBA-15 and MCM-41 for CO 2 capture with excellent stability and regenerability

    KAUST Repository

    Patil, Umesh

    2012-01-01

    We report the use of silicon oxynitrides as novel adsorbents for CO 2 capture. Three series of functionalized materials based on KCC-1, SBA-15 and MCM-41 with Si-NH 2 groups were prepared using a simple one-step process via thermal ammonolysis using ammonia gas, and they demonstrated excellent CO 2 capture capabilities. These materials overcome several limitations of conventional amine-grafted mesoporous silica. They offer good CO 2 capture capacity, faster adsorption-desorption kinetics, efficient regeneration and reuse, more crucially excellent thermal and mechanical stability even in oxidative environments, and a clean and green synthesis route, which allows the overall CO 2 capture process to be practical and sustainable. This journal is © The Royal Society of Chemistry 2012.

  10. Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

    Energy Technology Data Exchange (ETDEWEB)

    Al-Obeidi, Ahmed, E-mail: alobeidi@mit.edu; Thompson, Carl V., E-mail: reiner.moenig@kit.edu, E-mail: cthomp@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Kramer, Dominik, E-mail: dominik.kramer@kit.edu; Mönig, Reiner, E-mail: reiner.moenig@kit.edu, E-mail: cthomp@mit.edu [Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), Helmholtzstraße 11, 89081 Ulm (Germany); Boles, Steven T., E-mail: steven.t.boles@polyu.edu.hk [Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Hong Kong Polytechnic University, 11 Yuk Choi Rd, Hung Hom (Hong Kong)

    2016-08-15

    The development of large stresses during lithiation and delithiation drives mechanical and chemical degradation processes (cracking and electrolyte decomposition) in thin film silicon anodes that complicate the study of normal electrochemical and mechanical processes. To reduce these effects, lithium phosphorous oxynitride (LiPON) coatings were applied to silicon thin film electrodes. Applying a LiPON coating has two purposes. First, the coating acts as a stable artificial solid electrolyte interphase. Second, it limits mechanical degradation by retaining the electrode's planar morphology during cycling. The development of stress in LiPON-coated electrodes was monitored using substrate curvature measurements. LiPON-coated electrodes displayed highly reproducible cycle-to-cycle behavior, unlike uncoated electrodes which had poorer coulombic efficiency and exhibited a continual loss in stress magnitude with continued cycling due to film fracture. The improved mechanical stability of the coated silicon electrodes allowed for a better investigation of rate effects and variations of mechanical properties during electrochemical cycling.

  11. Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

    2006-10-25

    Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

  12. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

    Science.gov (United States)

    Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

    2018-01-23

    Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

  13. Self-organized nickel nanoparticles on nanostructured silicon substrate intermediated by a titanium oxynitride (TiNxOy) interface

    Science.gov (United States)

    Morales, M.; Droppa, R., Jr.; de Mello, S. R. S.; Figueroa, C. A.; Zanatta, A. R.; Alvarez, F.

    2018-01-01

    In this work we report an experimental approach by combining in situ sequential top-down and bottom-up processes to induce the organization of nanosized nickel particles. The top-down process consists in xenon ion bombardment of a crystalline silicon substrate to generate a pattern, followed by depositing a ˜15 nm titanium oxynitride thin film to act as a metallic diffusion barrier. Then, metallic nanoparticles are deposited by argon ion sputtering a pure nickel target, and the sample is annealed to promote the organization of the nickel nanoparticles (a bottom-up process). According to the experimental results, the surface pattern and the substrate biaxial surface strain are the driving forces behind the alignment and organization of the nickel nanoparticles. Moreover, the ratio between the F of metallic atoms arriving at the substrate relative to its surface diffusion mobility determines the nucleation regime of the nickel nanoparticles. These features are presented and discussed considering the existing technical literature on the subject.

  14. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  15. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  16. Hydrogen distribution in oxynitride/oxide structures

    NARCIS (Netherlands)

    Oude Elferink, J.B.; Heide, U.A. van der; Arnold Bik, W.M.; Habraken, F.H.P.M.; Weg, W.F. van der

    1987-01-01

    Silicon oxynitride films with five different O/N ratios were deposited with low pressure chemical vapor deposition on a silicon substrate covered with an oxide. The films were subjected to subsequent post-deposition anneals in N2 and H2 at 1000°C, and a H plasma at 300°C to obtain information about

  17. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  18. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  19. Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

    International Nuclear Information System (INIS)

    McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati

    2012-01-01

    Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO x N y films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.

  20. Characterization of the Young's modulus and residual stresses for a sputtered silicon oxynitride film using micro-structures

    International Nuclear Information System (INIS)

    Dong, Jian; Du, Ping; Zhang, Xin

    2013-01-01

    Silicon oxynitride (SiON) is an important material to fabricate micro-electro-mechanical system (MEMS) devices due to its composition-dependent tunability in electronic and mechanical properties. In this work, the SiON film with 41.45% silicon, 32.77% oxygen and 25.78% nitrogen content was deposited by RF magnetron sputtering. Two types of optimized micro-structures including micro-cantilevers and micro-rotating-fingers were designed and fabricated using MEMS surface micromachining technology. The micro-cantilever bending tests were conducted using a nanoindenter to characterize the Young's modulus of the SiON film. Owing to the elimination of the residual stress effect on the micro-cantilever structure, higher accuracy in the Young's modulus was achieved from this technique. With the information of Young's modulus of the film, the residual stresses were characterized from the deflection of the micro-rotating-fingers. This structure was able to locally measure a large range of tensile or compressive residual stresses in a thin film with sufficient sensitivities. The results showed that the Young's modulus of the SiON film was 122 GPa and the residual stresses of the SiON film were 327 MPa in the crystallographic orientation of the wafer and 334 MPa in the direction perpendicular to the crystallographic orientation, both in compression. This work presents a comprehensive methodology to measure the Young's modulus and residual stresses of a thin film with improved accuracy, which is promising for applications in mechanical characterization of MEMS devices. - Highlight: • We measured the Young's modulus and residual stress of SiON film by microstructure. • Micro cantilever structure improved the Young's modulus' measurement accuracy. • We explored the reason for the deviations of residual stress value of SiON film

  1. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  2. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  3. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  4. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  5. Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

    KAUST Repository

    Sevilla, Galo T.

    2013-07-09

    Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

    KAUST Repository

    Sevilla, Galo T.; Inayat, Salman Bin; Rojas, Jhonathan Prieto; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2013-01-01

    Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Graphene as a transparent electrode for amorphous silicon-based solar cells

    International Nuclear Information System (INIS)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-01-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

  8. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Science.gov (United States)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-06-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  9. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  10. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-01-01

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  11. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  12. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

    International Nuclear Information System (INIS)

    Holland, S.E.

    2000-01-01

    The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels

  13. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  14. Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

    Science.gov (United States)

    Ju, Byongsun

    2005-11-01

    As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3

  15. Solid state MEMS devices on flexible and semi-transparent silicon (100) platform

    KAUST Repository

    Ahmed, Sally; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    We report fabrication of MEMS thermal actuators on flexible and semi-transparent silicon fabric released from bulk silicon (100). We fabricated the devices first and then released the top portion of the silicon (≈ 19 μm) which is flexible and semi-transparent. We also performed chemical mechanical polishing to reuse the remaining wafer. A tested thermal actuator with 3 μm wide 240 μm hot arm and 10 μm wide 185 μm long cold arm deflected by 1.7 μm at 1 V. The fabricated thermal actuators exhibit similar performance before and after bending. We believe the demonstrated process will expand the horizon of flexible electronics into MEMS world devices. © 2014 IEEE.

  16. Critical Role of Diels-Adler Adducts to Realise Stretchable Transparent Electrodes Based on Silver Nanowires and Silicone Elastomer

    Science.gov (United States)

    Heo, Gaeun; Pyo, Kyoung-Hee; Lee, Da Hee; Kim, Youngmin; Kim, Jong-Woong

    2016-05-01

    This paper presents the successful fabrication of a transparent electrode comprising a sandwich structure of silicone/Ag nanowires (AgNWs)/silicone equipped with Diels-Alder (DA) adducts as crosslinkers to realise highly stable stretchability. Because of the reversible DA reaction, the crosslinked silicone successfully bonds with the silicone overcoat, which should completely seal the electrode. Thus, any surrounding liquid cannot leak through the interfaces among the constituents. Furthermore, the nanowires are protected by the silicone cover when they are stressed by mechanical loads such as bending, folding, and stretching. After delicate optimisation of the layered silicone/AgNW/silicone sandwich structure, a stretchable transparent electrode which can withstand 1000 cycles of 50% stretching-releasing with an exceptionally high stability and reversibility was fabricated. This structure can be used as a transparent strain sensor; it possesses a strong piezoresistivity with a gauge factor greater than 11.

  17. On the electronic nature of silicon and germanium based oxynitrides and their related mechanical, optical and vibrational properties as obtained from DFT and DFPT

    KAUST Repository

    Goumri-Said, Souraya

    2012-02-01

    Electronic structure, bonding and optical properties of the orthorhombic oxynitrides Si 2N 2O and Ge 2N 2O are studied using the density function theory as implemented in pseudo-potential plane wave and full-potential (linearized) augmented plane wave plus local orbitals methods. Generalized gradient approximation is employed in order to determine the band gap energy. Indeed, the Si 2N 2O exhibits a large direct gap whereas Ge 2N 2O have an indirect one. Bonding is analyzed via the charge densities and Mulliken population, where the role of oxygen is investigated. The analysis of the elastic constants show the mechanical stability of both oxynitrides. Their bulk and shear modulus are slightly smaller than those reported on nitrides semiconductors due to the oxygen presence. The optical properties, namely the dielectric function, optical reflectivity, refractive index and electron energy loss, are reported for radiation up to 30 eV. The phonon dispersion relation, zone-center optical mode frequency, density of phonon states are calculated using the density functional perturbed theory. Thermodynamic properties of Si 2N 2O and Ge 2N 2O, such as heat capacity and Debye temperature, are given for reference. Our study suggests that Si 2N 2O and Ge 2N 2O could be a promising potential materials for applications in the microelectronics and optoelectronics areas of research. © 2011 Elsevier B.V. All rights reserved.

  18. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  19. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  20. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  1. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...

  2. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  3. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  4. Graphene as transparent and current spreading electrode in silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Behura, Sanjay K., E-mail: sanjaybehura@gmail.com; Nayak, Sasmita; Jani, Omkar [Solar Energy Research Wing, Gujarat Energy Research and Management Institute - Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat (India); Mahala, Pramila [School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat (India)

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  5. Graphene as transparent and current spreading electrode in silicon solar cell

    Directory of Open Access Journals (Sweden)

    Sanjay K. Behura

    2014-11-01

    Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  6. Transparency

    NARCIS (Netherlands)

    Gupta, A.; Mason, M.

    2015-01-01

    Transparency, as information disclosure, is becoming a widely accepted norm and set of practices in global climate governance. Disclosure of climate-related information is mainly seen as a way to monitor and/or reward various actors’ climate mitigation actions, thereby contributing, at least in

  7. Transparency

    Science.gov (United States)

    LaFee, Scott

    2009-01-01

    Citizens now expect access to information, particularly from public institutions like local school districts. They demand input and accountability. Cultural and technological changes, such as the Internet, make it possible for districts to comply. Yet transparency--the easily seen and understood actions of a school district and the thinking behind…

  8. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  10. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

    International Nuclear Information System (INIS)

    Canteli Perez-Caballero, D.

    2015-01-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  11. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    International Nuclear Information System (INIS)

    He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

    2010-01-01

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  12. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; Bowring, Andrea R.; Unger, Eva L.; Nguyen, William H.; Burschka, Julian; Pellet, Norman; Lee, Jungwoo Z.; Grä tzel, Michael; Noufi, Rommel; Buonassisi, Tonio; Salleo, Alberto; McGehee, Michael D.

    2015-01-01

    solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS

  13. The novel silicon-containing epoxy/PEPA phosphate flame retardant for transparent intumescent fire resistant coating

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Yanchao [School of Materials Science and Engineering, Tongji University, 4800 Cao' an Road, Shanghai 201804 (China); Wang, Guojian, E-mail: wanggj@tongji.edu.cn [School of Materials Science and Engineering, Tongji University, 4800 Cao' an Road, Shanghai 201804 (China); Key Laboratory of Advanced Civil Engineering Materials, Ministry of Education, 4800 Cao' an Road, Shanghai 201804 (China)

    2016-11-01

    Highlights: • The novel halogen-free flame retardant containing silicon and caged bicyclic phosphate was synthesized. • A novel transparent intumescent fire resistant coating was developed by the P-Si synergistic flame retardant and melamine formaldehyde resin. • Excellent fire protection of the transparent intumescent fire resistant coating. • The P-Si synergistic flame retardant could improve the thermo-oxidation resistance of transparent fire resistant coating. - Abstract: A series of novel silicon-containing epoxy/PEPA phosphate flame retardants (EPPSi) were synthesized by polyphosphoric acid (PPA), caged bicyclic phosphate 1-oxo-4-hydroxymethyl-2,6,7-trioxa-L-phosphabicyclo [2.2.2] octane (PEPA), and different ratios of silicon-containing epoxy 1,1,3,3-tetramethyl-1,3-bis(3-(oxiran-2-ylmethoxy)propyl)disiloxane (TMSEP) to 1,4-butanediol diglycidyl ether (BDE). The chemical structure of EPPSi was confirmed by Fourier transform infrared spectroscopy (FTIR) and {sup 1}H nuclear magnetic resonance spectroscopy ({sup 1}H NMR). Afterwards, the transparent intumescent fire resistant coatings were prepared by mixing EPPSi and melamine formaldehyde resin. The influence of silicon on the fire protection of coatings was intensively investigated by fire protection test, intumescence ratio, scanning electron microscope (SEM), compressive strength test, X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA) and real-time FTIR. It was found that the fire resistant coatings obtained the best fire protection when the ratio of TMESP/BDE was 20/100, while excessive TMSEP made the fire protection of coatings deceased sharply. The intumescence ratio, compressive strength test and SEM result showed that a synergistic effect existed between phosphorus and silicon, which improved the foam structure and compressive strength of the char layer significantly. XPS result proved the out-migration effect of silicon. The high concentration silicon on surface played

  14. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  15. Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

    Science.gov (United States)

    Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

    2013-05-06

    Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

  16. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  17. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  18. Luminescence properties of Eu2+ - activated alkaline-earth silicon-oxynitride MSi2O2-deltaN2+2/3delta (M = Ca, Sr, Ba) : A promising class of novel LED conversion phosphors

    NARCIS (Netherlands)

    Li, Y.Q.; Delsing, A.C.A.; With, de G.; Hintzen, H.T.J.M.

    2005-01-01

    The luminescence properties of Eu2+-activated alk.-earth Si-oxynitrides were studied. In the BaO-SiO2-Si3N4 system, a new BaSi2O2N2 compd. was obtained having the monoclinic structure with lattice parameters a 14.070(4), b 7.276(2), c 13.181(3) .ANG., b 107.74(6)°. All MSi2O2-dN2+2/3d:Eu2+ (M = Ca,

  19. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  20. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  1. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  2. Nanoindentation characterization of deformation and failure of aluminum oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Guo, J.J.; Wang, K.; Fujita, T. [WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); McCauley, J.W. [US Army Research Laboratory, Aberdeen Proving Ground, MD 21078 (United States); Singh, J.P. [US Army International Technology Center, Tokyo 106-0032 (Japan); Chen, M.W., E-mail: mwchen@wpi-aimr.tohoku.ac.jp [WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Department of Mechanical Engineering, Johns Hopkins University, Baltimore, MD 21218 (United States)

    2011-02-15

    A systematic study of the mechanical deformation and failure of transparent ceramic aluminum oxynitride (AlON) has been conducted using a depth-sensitive nanoindentation technique combined with transmission electron microscopy (TEM) and Raman spectroscopy. Although discrete displacement bursts appear in the load-depth profiles at high applied forces, a detectable high-pressure phase transition has not been found by means of micro-Raman spectroscopy and TEM. Instead, a high density of dissociated <1 1 0> dislocations can be observed underneath the nanoindenters, suggesting that extensive plastic deformation takes place in the brittle ceramic at high contact pressures. Moreover, nanoindentation-induced micro-cracks oriented along well-defined crystallographic planes can also be observed, consistent with the low fracture toughness of AlON evaluated by an indentation method using Laugier's equation.

  3. Synthesis and characterization of mesostructured borosilica oxynitrides

    International Nuclear Information System (INIS)

    Xiu Tongping; Liu Qian; Wang Jiacheng

    2007-01-01

    Mesoporous borosilica oxynitrides were prepared by heat treatment of boron substituted MCM-41 in flowing ammonia at high-temperatures. Based on absorption-desorption isotherms, high-resolution transmission electron microscopy (HRTEM) and small-angle X-ray diffraction (SAXRD) measurement of the samples, it was found that the mesostructured ordering, high BET surface area and narrow pore size distribution of B-MCM-41 could be maintained after nitridation. Mesostructured borosilica oxynitrides may be potential acid-base solid catalysts in future

  4. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  5. Efficient Semitransparent Perovskite Solar Cells Using a Transparent Silver Electrode and Four-Terminal Perovskite/Silicon Tandem Device Exploration

    Directory of Open Access Journals (Sweden)

    Dazheng Chen

    2018-01-01

    Full Text Available Four-terminal tandem solar cells employing a perovskite top cell and crystalline silicon (Si bottom cell offer a simpler pathway to surpass the efficiency limit of market-leading single-junction silicon solar cells. To obtain cost-effective top cells, it is crucial to develop transparent conductive electrodes with low parasitic absorption and manufacturing cost. The commonly used indium tin oxide (ITO shows some drawbacks, like the increasing prices and high-energy magnetron sputtering process. Transparent metal electrodes are promising candidates owing to the simple evaporation process, facile process conditions, and high conductivity, and the cheaper silver (Ag electrode with lower parasitic absorption than gold may be the better choice. In this work, efficient semitransparent perovskite solar cells (PSCs were firstly developed by adopting the composite cathode of an ultrathin Ag electrode at its percolation threshold thickness (11 nm, a molybdenum oxide optical coupling layer, and a bathocuproine interfacial layer. The resulting power conversion efficiency (PCE is 13.38% when the PSC is illuminated from the ITO side and the PCE is 8.34% from the Ag side, and no obvious current hysteresis can be observed. Furthermore, by stacking an industrial Si bottom cell (PCE = 14.2% to build a four-terminal architecture, the overall PCEs of 17.03% (ITO side and 11.60% (Ag side can be obtained, which are 27% and 39% higher, respectively, than those of the perovskite top cell. Also, the PCE of the tandem cell has exceeded that of the reference Si solar cell by about 20%. This work provides an outlook to fabricate high-performance solar cells via the cost-effective pathway.

  6. Atomic layer deposited ZnO:B as transparent conductive oxide for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Gatz, H.A.; Koushik, D.; Rath, J.K.; Kessels, W.M.M.; Schropp, R.E.I.

    A key factor to improve the performance of silicon heterojunction solar cells (SHJ) is increasing their short circuit density (Jsc) by reducing the parasitic absorption of light in the front side of the cell. Therefore, we have investigated the replacement of the conventional sputtered ITO on the

  7. Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks

    NARCIS (Netherlands)

    Raz, O.; Tassaert, M.; Roelkens, G.C.; Dorren, H.J.S.

    2013-01-01

    As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a

  8. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  9. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  10. Neutron diffraction of γ-aluminium oxynitride

    NARCIS (Netherlands)

    Willems, H.X.; With, de G.; Metselaar, R.; Helmholdt, R.B.; Petersen, K.K.

    1993-01-01

    Neutron diffraction expts. were performed on Al oxynitride (Alon) powders with compns. corresponding to 67.5, 73 and 77.5 mol.% Al2O3. The 73 mol.% powder was produced by reacting Al2O3 and AlN powders for 3 h at 1750 Deg. After reaction the resultant powder was ground with a mortar and pestle to

  11. Mechanical properties of gamma-aluminium oxynitride

    NARCIS (Netherlands)

    Willems, H.X.; Hal, van P.F.; With, de G.; Metselaar, R.

    1993-01-01

    Mech. properties have been measured of three compositionally different types of g-aluminum oxynitride (Alon). The compns. corresponded to 67.5, 73 and 77.5 mol% Al2O3. To characterize the Alons, lattice parameters, densities, grain sizes and optical properties were measured. The measurements for the

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  14. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  15. A novel laser alignment system for tracking detectors using transparent silicon strip sensors

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-02-01

    Modern large-area precision tracking detectors require increasing accuracy of the geometrical alignment over large distances. A novel optical multi-point alignment system has been developed for the muon spectrometer of the ATLAS detector at the Large Hadron Collider. The system uses collimated laser beams as alignment references which are monitored by semi-transparent optical position sensors. The custom designed sensors provide very precise and uniform position information on the order of 1 μm over a wide measurement range. At suitable laser wavelengths, produced by laser diodes, transmission rates above 90% have been achieved which allow to align more than 30 sensors along one laser beam. With this capability and equipped with integrated readout electronics, the alignment system offers high flexibility for precision applications in a wide range of detector systems. (orig.)

  16. Chemical environment of iron atoms in iron oxynitride films synthesized by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Grafoute, M.; Petitjean, C.; Rousselot, C.; Pierson, J.F.; Greneche, J.M.

    2007-01-01

    An iron oxynitride film was deposited on silicon and glass substrates by magnetron sputtering in an Ar-N 2 -O 2 reactive mixture. Rutherford back-scattering spectrometry was used to determine the film composition (Fe 1.06 O 0.35 N 0.65 ). X-ray diffraction revealed the formation of a face-centred cubic (fcc) structure with a lattice parameter close to that of γ'''-FeN. X-ray photoelectron spectroscopy showed the occurrence of Fe-N and Fe-O bonds in the film. The local environment of iron atoms studied by 57 Fe Moessbauer spectrometry at both 300 and 77 K gives clear evidence that the Fe 1.06 O 0.35 N 0.65 is not a mixture of iron oxide and iron nitride phases. Despite a small amount of an iron nitride phase, the main sample consists of an iron oxynitride phase with an NaCl-type structure where oxygen atoms partially substitute for nitrogen atoms, thus indicating the formation of a iron oxynitride with an fcc structure

  17. Slag corrosion of gamma aluminium oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xidong; Li Wen Chao [Beijing Univ. of Science and Technology, BJ (China). Dept. of Physical Chemistry of Metals; Sichen Du; Seetharaman, S. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Materials Science and Technology

    2002-03-01

    Corrosion of {gamma}-aluminium oxynitride (AlON) by CaO-MgO-''FeO''-Al{sub 2}O{sub 3}-SiO{sub 2} melts corresponding to blast furnace slag was examined from 1693 to 1753 K under static and forced convection conditions. An intermediate layer was observed between the unreacted oxynitride and slag. After a certain time interval, the rate of the growth of this layer was found to be equal to the rate of the dissolution of the layer. Slag corrosion of AlON is a strongly thermally activated process, the overall activation energy being 1002 kJ/mol. The rate of corrosion was found to be significantly enhanced by the addition of ''FeO''. (orig.)

  18. Transparent amorphous silicon sensors for the alignment system of particle detectors

    International Nuclear Information System (INIS)

    Fernandez, M.G.

    1999-01-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  19. Transparent amorphous silicon sensors for the alignment system of particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M.G. [Ciemat, Madrid (Spain)

    1999-07-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  20. Nitrogen bonding in aluminum oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Paul W., E-mail: pwang@bradley.edu [Department of Physics, Bradley University, 1501 W. Bradley Ave., Peoria, IL 61625 (United States); Hsu, Jin-Cherng [Department of Physics, Fu Jen Catholic University, Hsinchuang, Taipei Hsien 24205, Taiwan (China); Lin, Yung-Hsin; Chen, Huang-Lu [Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, Hsinchuang, Taipei Hsien 24205, Taiwan (China)

    2010-04-15

    Assignment of oxidation states of N{sub 1s} in XPS spectra of aluminum oxynitride by curve fitting is difficult. The XPS curve fitting was previously discussed in the paper published in J. Non-Cryst. Solids, 224 (1998) 31, in which O{sub 1s} photoelectrons from GeO{sub 2} glass were used to illustrate how to fit the XPS spectra. Three different ways were pointed out to eliminate the ambiguity caused by curve fitting such as comparing the data to data from standard samples, investigating the continuous surface modifications caused by slowly sputtering the surface, and monitoring the continuous surface modifications due to gradual increases in surface species under heating, cooling, or irradiation. Our recent work in aluminum oxynitride films provides another example of how to fit the XPS spectra of N{sub 1s} by three different oxidation states of N{sup +}, N{sup 2+}, and N{sup 3+}, by comparison of the measured data to data from previously published results, and by the gradual changes of spectra as functions of the oxygen contents in the films. Three oxidation states in different nitrogen bonding in the aluminum oxynitride, AlO{sub 2}N, Al{sub 2}O{sub 5}N{sub 2}, and AlO{sub 3}N, were clearly deduced.

  1. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  2. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  3. Concentrator bifacial crystalline silicon solar cells with multi-wire metallization attached to TCO layers using transparent conductive polymers

    Science.gov (United States)

    Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim

    2017-09-01

    Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The

  4. Optical and electrical properties of negatively charged aluminium oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Kyungsoo; Jung, Sungwook; Lee, Jeoungin; Lee, Kwangsoo; Kim, Jaehong; Son, Hyukjoo [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of); Yi, Junsin [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of)], E-mail: yi@yurim.ac.kr

    2008-11-03

    Aluminium oxynitride (AlON) thin films were deposited by Radio Frequency (RF) magnetron sputtering on n-type silicon (Si) substrate of (100) orientation using argon (Ar) and oxygen (O{sub 2}) gases at substrate temperature of 450 {sup o}C. To know the change in electrical properties with gases ratio, a deposition was carried out for 140 s with Ar:O{sub 2} ratio changed from 1:3 to 4:3. After that, electrical properties of Metal-Insulator-Semiconductor (MIS) structure with AlON was analyzed. For Ar:O{sub 2} ratios from 1:3 to 4:3, all samples showed characteristics of negative charge. In particular, when Ar:O{sub 2} were 2:3 and 3:3, the value of flatband voltage in normal C-V curve showed above 14 V. The composition of the AlON in the film was investigated using X-ray Photoelectron Spectroscopy (XPS). The flatband voltages (V{sub FB}) in C-V curves were found to depend on compositions. The characteristics of photon energy band gap were obtained by UV/VIS spectrum.

  5. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  6. Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

    KAUST Repository

    Sevilla, Galo T.

    2014-02-22

    An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

    KAUST Repository

    Sevilla, Galo T.; Rojas, Jhonathan Prieto; Fahad, Hossain M.; Hussain, Aftab M.; Ghanem, Rawan; Smith, Casey; Hussain, Muhammad Mustafa

    2014-01-01

    An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  9. Synthesis and biological characterization of zirconium oxynitride thin film growth by radio-frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I. [Departamento de Química, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Facultad de Ingeniería, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Clavijo, D. [Facultad de Medicina, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de materiales con Aplicaciones Tecnológicas, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cardozo, C. [Instituto de Biotecnología, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2013-02-01

    Thin films of zirconium oxynitride were grown on common glass, silicon substrates (100) and on stainless steel 316L using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological, and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (SEM) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316L through proliferation and cellular adhesion. The XRD analysis showed that films deposited at 623 K, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 and a total deposit time of 30 min grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The SEM analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. Finally, through the analysis of the biocompatibility, we established that the films have a better surface than the substrate (stainless steel 316L) in terms of adhesion and proliferation of bone cells. - Highlights: ►ZrO{sub x}N{sub y} thin films were deposited using reactive radio-frequency magnetron sputtering. ►We studied the effect of deposition parameters on ZrO{sub x}N{sub y} thin films microstructure. ►We have been able to grow bone cells on ZrO{sub x}N{sub y} coated stainless steel 316L.

  10. Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

    Science.gov (United States)

    Pandey, Rahul; Chaujar, Rishu

    2016-12-01

    In this work, a novel four-terminal perovskite/SiC-based rear contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick rear contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.

  11. Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

    International Nuclear Information System (INIS)

    Ferrari, S.; Perego, M.; Fanciulli, M.

    2002-01-01

    We present a methodology for the quantitative estimation of nitrogen in ultrathin oxynitrides by means of time of flight secondary ion mass spectrometry (TOF-SIMS) and x-ray photoelectron spectroscopy (XPS). We consider an innovative approach to TOF-SIMS depth profiling, by elemental distribution of single species as sum of peaks containing such species. This approach is very efficient in overcoming matrix effect arising when quantifying elements were distributed in silicon and silicon oxide. We use XPS to calibrate TOF-SIMS and to obtain quantitative information on nitrogen distribution in oxynitride thin layers. In the method we propose we process TOF-SIMS and XPS data simultaneously to obtain a quantitative depth profile

  12. Broadband near infrared quantum cutting in Bi–Yb codoped Y2O3 transparent films on crystalline silicon

    International Nuclear Information System (INIS)

    Qu Minghao; Wang Ruzhi; Chen Yan; Zhang Ying; Li Kaiyu; Yan Hui

    2012-01-01

    By a pulsed laser deposition technique the efficient broadband near-infrared downconversion Bi–Yb codoped crystallization Y 2 O 3 transparent films have been grown successfully on Si (1 0 0) substrates. Upon excitation of ultraviolet photon varying from 300 to 400 nm, the near infrared quantum cutting has been obtained, which is originated from the transitions of the transition-metal Bi 3+3 P 1 level to Yb 3+2 F 5/2 level. The downconversion quantum efficiency of films is estimated to be 152%. The transparent Y 2 O 3 films may have potential application in enhancing the conversion efficiency of crystalline Si solar cells. - Highlights: ► The downconversion Y 2 O 3 :Bi,Yb films has good transparency. ► Y 2 O 3 :Bi,Yb films possess a broadband absorption in the UV region of 300–400 nm. ► The films may have potential application in enhancing the efficiency of c-Si cells.

  13. Oxidation of {phi}'-aluminium oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Xolin, E. [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France); Jorand, Y., E-mail: Yves.Jorand@insa-lyon.f [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France); Olagnon, C.; Gremillard, L. [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France)

    2011-03-15

    Research highlights: Oxidation of {phi}'-AlON has been studied for the first time. First corrosion products are {gamma}-alumina. Low density {alpha}-alumina is formed at high temperature. Grains are extensively cracked after oxidation. The low density of the {alpha}-alumina is due to a network of nanometric porosities. - Abstract: The oxidation in air of single crystal {phi}'-aluminium oxynitride (AlON) grains has been characterized by thermogravimetry and X-ray diffraction in the 1273-1673 K range. Two oxidation stages have been observed, suggesting the formation of a transitional phase. Below 1473 K, oxidation results in the apparition of platelets and noodle-like crystals on the surface of the initially faceted single crystals. Above 1473 K, low density {alpha}-alumina polycrystals start forming on the grain surface and grow towards the grain core with increasing temperature or time. Their low density is mainly due to the presence of a network of nano-porosities.

  14. AC-Conductivity measurements on γ-aluminium oxynitride

    NARCIS (Netherlands)

    Willems, H.X.; Hal, van P.F.; Metselaar, R.; With, de G.

    1995-01-01

    AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their interesting defect structure. Although it became apparent that these Alons are not stable in the temperature range used, the electrical properties of the materials could be measured with impedance

  15. Transparent ceramic lamp envelope materials

    Energy Technology Data Exchange (ETDEWEB)

    Wei, G C [OSRAM SYLVANIA, 71 Cherry Hill Drive, Beverly, MA 01915 (United States)

    2005-09-07

    Transparent ceramic materials with optical qualities comparable to single crystals of similar compositions have been developed in recent years, as a result of the improved understanding of powder-processing-fabrication- sintering-property inter-relationships. These high-temperature materials with a range of thermal and mechanical properties are candidate envelopes for focused-beam, short-arc lamps containing various fills operating at temperatures higher than quartz. This paper reviews the composition, structure and properties of transparent ceramic lamp envelope materials including sapphire, small-grained polycrystalline alumina, aluminium oxynitride, yttrium aluminate garnet, magnesium aluminate spinel and yttria-lanthana. A satisfactory thermal shock resistance is required for the ceramic tube to withstand the rapid heating and cooling cycles encountered in lamps. Thermophysical properties, along with the geometry, size and thickness of a transparent ceramic tube, are important parameters in the assessment of its resistance to fracture arising from thermal stresses in lamps during service. The corrosive nature of lamp-fill liquid and vapour at high temperatures requires that all lamp components be carefully chosen to meet the target life. The wide range of new transparent ceramics represents flexibility in pushing the limit of envelope materials for improved beamer lamps.

  16. Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

    2015-12-01

    Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

  17. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2017-07-01

    Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

  18. Oxynitrides decorated 316L SS for potential bioimplant application

    Science.gov (United States)

    Saravanan Kaliaraj, Gobi; Kumar, N.

    2018-03-01

    Titanium oxynitride (TiON) and zirconium oxynitride (ZrON) were deposited onto 316L stainless steel (316L SS) using reactive magnetron sputtering technique. The monoclinic and cubic phase of TiON and ZrON were obtained by x-ray diffraction (XRD). Nanoindentation and wear test analysis exhibited the better mechanical properties of TiON and ZrON films. Wettability studies showed hydrophilic nature on coated films; whereas bare 316L SS substrate was least hydrophilic. Drastic reduction of bacterial adhesion (Pseudomonas aeruginosa), as well as biofilm formation, was observed in both the films at different time duration. TiON and ZrON films were exhibited excellent hemocompatibility by preventing the platelet activation. Furthermore, the coated films exhibited corrosion protection in presence and absence of hydrogen peroxide (H2O2) in artificial blood plasma (ABP) solution.

  19. Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

    International Nuclear Information System (INIS)

    Misra, E.; Wang, Y.; Theodore, N.D.; Alford, T.L.

    2004-01-01

    The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p + n diodes were investigated. Both materials characterization (X-ray diffraction analysis, Rutherford backscattering spectrometry (RBS), Auger depth profiling) and electrical measurements (reverse-biased junction leakage current-density) were used to evaluate diffusion barrier properties of the thin films. The leakage current density of p + n diodes with the barrier (Ta-O-N) was approximately four orders of magnitude lower than those without barriers after a 30 min, 400 deg. C back contact anneal. The Ta-O-N barriers were stable up to 500 deg. C, 30 min anneals. However, this was not the case for the 600 deg. C anneal. RBS spectra and cross-sectional transmission electron microscopy of as-deposited and vacuum annealed samples of Ag/barrier (Ta-O-N)/Si indicate the absence of any interfacial interaction between the barrier and substrate (silicon). The failure of the Ta-O-N barriers has been attributed to thermally induced stresses, which cause the thin film to crack at elevated temperatures

  20. Band gap determination of thin praseodymium oxide layers on aluminium oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Bergholz, Matthias; Schmeisser, Dieter [Brandenburgische Technische Universitaet, Cottbus (Germany). Angewandte Physik - Sensorik

    2008-07-01

    High-k dielectrics are important as never before in semiconductor industry. We investigate Pr{sub 2}O{sub 3} as one representative of this group on silicon and silicon-aluminium oxynitride substrates. In earlier work we observed the positive influence of this AlO{sub x}N{sub y} intermediate layer on the electrical properties of the Pr{sub 2}O{sub 3} layer. Now we present in-situ EELS, XPS and UPS measurements of gradually grown thin Pr{sub 2}O{sub 3} on AlO{sub x}N{sub y}. From these measurements we determine the band structure and find a very fast change of the band gap for the first few A, coupled with n-type behaviour for the Pr{sub 2}O{sub 3} film. These results are compared with RIXS measurements of a 5 nm Pr{sub 2}O{sub 3} on a 1 nm thick AlO{sub x}N{sub y} layer.

  1. Synthesis, microstructures and properties of {gamma}-aluminum oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xidong; Wang Fuming; Li Wenchao

    2003-02-15

    This paper deals with the synthesis, microstructures and properties of {gamma}-aluminum oxynitride (AlON). The thermodynamic properties of AlON were analyzed and the Gibbs energy of AlON with different compositions and temperatures were evaluated. Based on thermodynamic studies, AlON has been synthesized. The microstructures, mechanical properties and oxidation resistance of the synthetic AlON have been examined and discussed.

  2. Structures and photocatalytic behavior of tantalum-oxynitride thin films

    International Nuclear Information System (INIS)

    Hsieh, J.H.; Li, Chuan; Liang, H.C.

    2011-01-01

    Tantalum oxynitride films were created by direct nitridation/oxidation during rapid thermal annealing at temperatures 450-700 deg. C. Instead of during deposition, this post process may be proved to be an alternative way to make transition metallic oxynitride films. With sufficient supply of oxygen flow (≥ 30 sccm), TaO x N y was formed as examined from X-ray diffraction (XRD) analysis. This oxynitride film has a broad optical absorption over the range of visible light and sufficient photocatalytic function. For optical absorption, the films' transmittance and reflectance were measured by a UV-VIS-NIR spectrophotometer with wavelengths ranging from 300 to 900 nm. The broad visible light absorption is associated with the formation of band gap in TaO x N y film, which was examined by the theoretical calculations combining the Beer-Lambert law and Tauc formula. Lastly, the photocatalysis of TaO x N y was gauged by the photodegradation test which measured the reduction of light absorbance affected by the decomposition of methylene blue (C 16 H 18 N 3 SCl.3H 2 O) on TaO x N y under visible light irradiation.

  3. On the existence of europium aluminum oxynitrides with a magnetoplumbite or beta-alumina type structure

    NARCIS (Netherlands)

    Hintzen, H.T.J.M.; Hanssen, R.; Jansen, S.R.; Metselaar, R.

    1999-01-01

    In the literature confusion exists concerning the structure type, the valence of europium, and the amount of nitrogen incorporation of the compound europium aluminum oxynitride. By using X-ray diffraction and luminescence measurements, we show that europium aluminum oxynitride has the

  4. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Praloy; Das, Debajyoti, E-mail: erdd@iacs.res.in

    2017-07-31

    Highlights: • ZnO:Ga film with perpetual c-axis orientation at low T{sub S} by RF magnetron sputtering. • High conductivity (200 S cm{sup −1}) and elevated transmission (∼93% at 500 nm) in nano-sheet like structure. • Si solar cell on ZnO:Ga with efficiency comparable to similar cell on U-type SnO{sub 2} coated Asahi glass. • Higher open circuit voltage and better fill factor with ZnO:Ga than SnO{sub 2}. - Abstract: Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I{sub 〈002〉}/I{sub 〈103〉} > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm{sup −1} and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO{sub 2} coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (V{sub OC}) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO{sub 2} counterpart, maintains a high transparency to the solar

  5. Semi-transparent solar cells

    International Nuclear Information System (INIS)

    Sun, J; Jasieniak, J J

    2017-01-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

  6. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  7. Computational study on oxynitride perovskites for CO_2 photoreduction

    International Nuclear Information System (INIS)

    Hafez, Ahmed M.; Zedan, Abdallah F.; AlQaradawi, Siham Y.; Salem, Noha M.; Allam, Nageh K.

    2016-01-01

    Highlights: • Oxynitride perovskites are investigated for photoelectrochemical CO_2 reduction. • They have small electron and hole effective masses, rendering higher mobility. • The effect of cation size on the band gap is investigated and discussed. • W-doping allowed the selection of specific CO_2 reduction products. - Abstract: The photocatalytic conversion of CO_2 into chemical fuels is an attractive route for recycling this greenhouse gas. However, the large scale application of such approach is limited by the low selectivity and activity of the currently used photocatalysts. Using first principles calculations, we report on the selection of optimum oxynitride perovskites as photocatalysts for photoelectrochemical CO_2 reduction. The results revealed six perovskites that perfectly straddle the carbon dioxide redox potential; namely, BaTaO_2N, SrTaO_2N, CaTaO_2N, LaTiO_2N, BaNbO_2N, and SrNbO_2N. The electronic structure and the effective mass of the selected candidates are discussed in details, the partial and total density of states illustrated the orbital hybridization and the contribution of each element in the valence and conduction band minima. The effect of cation size in the ABO_2N perovskites on the band gap is investigated and discussed. The optical properties of the selected perovskites are calculated to account for their photoactivity. Moreover, the effect of W doping on improving the selectivity of perovskites toward specific hydrocarbon product (methane) is discussed in details. This study reveals the promising optical and structural properties of oxynitride perovskite candidates for CO_2 photoreduction.

  8. Analysis of nitrogen species in titanium oxynitride ALD films

    Energy Technology Data Exchange (ETDEWEB)

    Sowińska, Małgorzata, E-mail: Malgorzata.Sowinska@b-tu.de [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany); Brizzi, Simone; Das, Chittaranjan [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany); Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Henkel, Karsten; Schmeißer, Dieter [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2016-09-15

    Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron radiation-based X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are used to characterize the nitrogen species incorporated within these films depending on the deposition parameters. It is found that nitrogen atoms in these films are differently bonded. In particular, it can be distinguished between Ti−ON and Ti−N bonding configurations and molecular nitrogen species caused by precursor fragments.

  9. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  10. Si0.85Ge0.15 oxynitridation in nitric oxide/nitrous oxide ambient

    International Nuclear Information System (INIS)

    Dasgupta, Anindya; Takoudis, Christos G.; Lei Yuanyuan; Browning, Nigel D.

    2003-01-01

    Low temperature, nitric oxide (NO)/nitrous oxide (N 2 O) aided, sub-35 Aa Si 0.85 Ge 0.15 oxynitrides have been grown at 550 and 650 deg. C, while the oxynitridation feed gases have been preheated to 900 and 1000 deg. C, respectively, before entering the reaction zone. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy (SIMS) data suggest that NO-assisted oxynitridation incorporates more nitrogen than the N 2 O-assisted one, while there is minimal Ge segregation towards the dielectric/substrate interface in both oxynitridation processes. Moreover, SIMS results suggest that nitrogen is distributed throughout the film in contrast to high temperature Si oxynitridation, where nitrogen incorporation takes place near the dielectric/substrate interface. Z-contrast imaging with scanning transmission electron microscopy shows that the oxynitride grown in NO at 650 degree sign C has a sharp interface with the bulk Si 0.85 Ge 0.15 , while the roughness of the dielectric/Si 0.85 Ge 0.15 substrate interface is less than 2 Aa. These results are discussed in the context of an overall mechanism of SiGe oxynitridation

  11. Optical properties of zirconium oxynitride films: The effect of composition, electronic and crystalline structures

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Rodrigues, M.S. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Espinós, J.P.; González-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-University Sevilla), Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Cunha, L.; Marques, L.; Vasilevskiy, M.I.; Vaz, F. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal)

    2015-12-15

    loss spectroscopy (REELS) revealed a continuous depopulation of the d-band and an opening of an energy gap between the valence band (2p) and the Fermi level close to 5 eV. The ZrN-based coatings (zone I and II) presented intrinsic colourations, with a decrease in brightness and a colour change from bright yellow to golden yellow, red brownish and dark blue. Associated to these changes, there was also a shift of the reflectivity minimum to lower energies, with the increase of the non-metallic content. The samples lying in the two last zones (zone III, oxynitride and zone IV, oxide films) revealed a typical semi-transparent-optical behaviour showing interference-like colourations only due to the complete depopulation of the d band at the Fermi level. The samples lying in these zones presented also an increase of the optical bandgap from 2 to 3.6 eV.

  12. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  13. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells; Tratamiento de oxidos conductores transparentes por procesos laser para el desarrollo de celulas fotovoltaicas de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Canteli Perez-Caballero, D.

    2015-07-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  14. Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    2018-01-01

    with the sharing of information and the perceived quality of the information shared. This narrow focus on information and quality, however, overlooks the dynamics of organizational transparency. To provide a more structured conceptualization of organizational transparency, this article unpacks the assumptions......Transparency is an increasingly prominent area of research that offers valuable insights for organizational studies. However, conceptualizations of transparency are rarely subject to critical scrutiny and thus their relevance remains unclear. In most accounts, transparency is associated...... that shape the extant literature, with a focus on three dimensions: conceptualizations, conditions, and consequences. The contribution of the study is twofold: (a) On a conceptual level, we provide a framework that articulates two paradigmatic positions underpinning discussions of transparency, verifiability...

  15. TRANSPARENT CONCRETE

    OpenAIRE

    Sandeep Sharma*, Dr. O.P. Reddy

    2017-01-01

    Transparent concrete is the new type of concrete introduced in todays world which carries special property of light transmitting due to presence of light Optical fibres. Which is also known as translucent concrete or light transmitting concrete, it is achieved by replacing coarse aggregates with transparent alternate materials (Optical fibres). The binding material in transparent concrete may be able to transmit light by using clear resins the concrete mix. The concrete used in industry in pr...

  16. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  17. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  18. White light-emitting diodes (LEDs) using (oxy)nitride phosphors

    International Nuclear Information System (INIS)

    Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

    2008-01-01

    (Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

  19. Color transparency

    International Nuclear Information System (INIS)

    Pire, B.; Ralston, J.P.

    1991-01-01

    This paper reviews the physics of color transparency and the unexpected energy dependence of recent measurements of high-energy fixed-angle elastic scattering in nuclear targets. The authors point out advantages of using transparency as a tool, introducing two concepts - spin and flavor flow filtering - that may be studied with nuclear targets. The special case of electroproduction is also considered

  20. Further studies on the lithium phosphorus oxynitride solid electrolyte

    International Nuclear Information System (INIS)

    Pichonat, Tristan; Lethien, Christophe; Tiercelin, Nicolas; Godey, Sylvie; Pichonat, Emmanuelle; Roussel, Pascal; Colmont, Marie; Rolland, Paul Alain

    2010-01-01

    First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P 2 O 5 /Li 2 O in ambient nitrogen atmosphere. The morphology, composition, and ionic conductivity were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and A.C. impedance spectroscopy. With a thickness of 1.4 μm, the obtained LiPON amorphous layer provided an ionic conductivity close to 6 x 10 -7 S cm -1 at room temperature. MicroRaman UV spectroscopy study was successfully carried out for the first time on LiPON thin films to complete the characterization and bring further information on LiPON structure.

  1. Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

    Science.gov (United States)

    Blázquez, O.; Martín, G.; Camps, I.; Mariscal, A.; López-Vidrier, J.; Ramírez, J. M.; Hernández, S.; Estradé, S.; Peiró, F.; Serna, R.; Garrido, B.

    2018-06-01

    The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole‑Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

  2. Efficient Near-Infrared-Transparent Perovskite Solar Cells Enabling Direct Comparison of 4-Terminal and Monolithic Perovskite/Silicon Tandem Cells

    OpenAIRE

    Werner, Jérémie; Barraud, Loris; Walter, Arnaud; Bräuninger, Matthias; Sahli, Florent; Sacchetto, Davide; Tétreault, Nicolas; Paviet-Salomon, Bertrand; Moon, Soo-Jin; Allebé, Christophe; Despeisse, Matthieu; Nicolay, Sylvain; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

    2016-01-01

    Combining market-proven silicon solar cell technology with an efficient wide band gap top cell into a tandem device is an attractive approach to reduce the cost of photovoltaic systems. For this, perovskite solar cells are promising high-efficiency top cell candidates, but their typical device size (

  3. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  4. A simple urea-based route to ternary metal oxynitride nanoparticles

    International Nuclear Information System (INIS)

    Gomathi, A.; Reshma, S.; Rao, C.N.R.

    2009-01-01

    Ternary metal oxynitrides are generally prepared by heating the corresponding metal oxides with ammonia for long durations at high temperatures. In order to find a simple route that avoids use of gaseous ammonia, we have employed urea as the nitriding agent. In this method, ternary metal oxynitrides are obtained by heating the corresponding metal carbonates and transition metal oxides with excess urea. By this route, ternary metal oxynitrides of the formulae MTaO 2 N (M=Ca, Sr or Ba), MNbO 2 N (M=Sr or Ba), LaTiO 2 N and SrMoO 3-x N x have been prepared successfully. The oxynitrides so obtained were generally in the form of nanoparticles, and were characterized by various physical techniques. - Graphical abstract: Nanoparticles of ternary metal oxynitrides can be synthesized by means of urea route. Given is the TEM image of the nanoparticles of CaTaO 2 N so obtained and the insets show the SAED pattern and HREM image of the nanoparticles

  5. Public Transparency

    OpenAIRE

    UNCTAD; World Bank

    2018-01-01

    This note provides guidance on the type of information about agricultural investments that investors and governments can make publicly available. Transparency about certain aspects of investments can improve relations between investors and communities, enable external stakeholders to hold investors to commitments, and improve investors’ public image. Although some information should be kep...

  6. Transparency International

    NARCIS (Netherlands)

    Hulten, van M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the

  7. Color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1993-01-01

    The anomously large transmission of nucleons through a nucleus following a hard collision is explored. This effect, known as color transparency, is believed to be a prediction of QCD. The necessary conditions for its occurrence and the effects that must be included a realistic calculation are discussed

  8. Color transparency

    International Nuclear Information System (INIS)

    Miller, G.A.

    1993-01-01

    Imagine shooting a beam of protons of high momentum P through an atomic nucleus. Usually the nuclear interactions prevent the particles from emerging with momentum ∼P. Further, the angular distribution of elastically scattered protons is close to the optical diffraction pattern produced by a black disk. Thus the nucleus acts as a black disk and is not transparent. However, certain high momentum transfer reactions in which a proton is knocked out of the nucleus may be completely different. Suppose that the high momentum transfer process leads to the formation of a small-size color singlet wavepacket that is ejected from the nucleus. The effects of gluons emitted by color singlet systems of closely separated quarks and gluons tend to cancel. Thus the wavepacket-nuclear interactions are suppressed, the nucleus becomes transparant and one says that color transparency CT occurs. The observation of CT also requires that the wavepacket not expand very much while it moves through the nucleus. Simple quantum mechanical formulations can assess this expansion. The creation of a small-sized wavepacket is expected in asymptotic perturbative effects. The author reviews the few experimental attempts to observe color transparency in nuclear (e,e'p) and (p,pp) reactions and interpret the data and their implications

  9. A novel LaFeO3−XNX oxynitride. Synthesis and characterization

    International Nuclear Information System (INIS)

    Sierra Gallego, G.; Marín Alzate, N.; Arnache, O.

    2013-01-01

    Highlights: ► LaFeO 3 perovskite synthesized by auto combustion method. ► LaFeO 3−X N X oxynitride produced by ammonolysis reaction. ► Oxynitride characterized by XRD, Rietveld, SEM, EDX, BET, Raman, TGA and FTIR. ► Partial replacement of oxygen by nitrogen increases slightly the cell parameters. ► TGA shows that oxynitride start to decompose in air above 550 °C. Evolution of N 2 and NO was detected. - Abstract: A perovskite LaFeO 3 was synthesized by auto combustion method and then LaFeO 3−X N X oxynitride was produced by ammonolysis reaction. The synthesized LaFeO 3−X N X oxynitride was characterized by X-ray diffraction (XRD), Rietveld refinement, scanning electron microscopy (SEM), energy dispersive X-ray (EDX), Brunauer–Emmett–Teller (BET) nitrogen adsorption, particle size distribution, Raman spectroscopy, thermogravimetric analysis (TGA) and Fourier transform infrared spectroscopy (FTIR). Nitrogen effect into the perovskite structure was confirmed by DRX. The structure refinement using the Rietveld method indicates that partial replacement of oxygen by nitrogen increases slightly the cell parameters of the LaFeO 3 perovskite. FTIR analysis show that bands at 995 and 1070 cm −1 in the oxynitrides spectra could be assigned to the stretching vibration modes of Fe–N bonds in the FeO 6−X N X octahedral. Thermogravimetric analysis (TGA) showed that LaFeO 3−X N X oxynitride series start to decompose in air above 550 °C. During the decomposition it was found that some amount of nitrogen stays retained in the structure forming intermediate compounds. MS analysis of the gaseous products reveals the evolution of N 2 and NO, suggesting a complex reaction mechanism. To our knowledge, there are no reports on the synthesis and characterization of the LaFeO 3−X N X oxynitrides.

  10. Method of forming aluminum oxynitride material and bodies formed by such methods

    Science.gov (United States)

    Bakas, Michael P [Ammon, ID; Lillo, Thomas M [Idaho Falls, ID; Chu, Henry S [Idaho Falls, ID

    2010-11-16

    Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise aluminum, oxygen, and nitrogen in addition to the aluminum orthophosphate. For example, the green bodies may include a mixture of aluminum oxide, aluminum nitride, and aluminum orthophosphate or another sacrificial material. Additional methods of forming aluminum oxynitride (AlON) materials include sintering a green body including a sacrificial material therein, using the sacrificial material to form pores in the green body during sintering, and infiltrating the pores formed in the green body with a liquid infiltrant during sintering. Bodies are formed using such methods.

  11. Graphene/semiconductor silicon modified BiFeO{sub 3}/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Surbhi; Medwal, Rohit, E-mail: rohitmedwal@gmail.com; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S., E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2015-08-10

    We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

  12. Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    International Nuclear Information System (INIS)

    Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S.; Tomar, Monika; Gupta, Vinay

    2015-01-01

    We report photovoltaic response of highly transparent graphene/BiFe 0.95 Si 0.05 O 3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I SC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V OC  ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I SC of 0.63 mA and V OC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I SC and V OC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows

  13. Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

    International Nuclear Information System (INIS)

    Cao, Haining; Kim, Seungchul; Lee, Kwang-Ryeol; Srivastava, Pooja; Choi, Keunsu

    2016-01-01

    Initial stage of oxynitridation process of Si substrate is of crucial importance in fabricating the ultrathin gate dielectric layer of high quality in advanced MOSFET devices. The oxynitridation reaction on a relaxed Si(001) surface is investigated via reactive molecular dynamics (MD) simulation. A total of 1120 events of a single nitric oxide (NO) molecule reaction at temperatures ranging from 300 to 1000 K are statistically analyzed. The observed reaction kinetics are consistent with the previous experimental or calculation results, which show the viability of the reactive MD technique to study the NO dissociation reaction on Si. We suggest the reaction pathway for NO dissociation that is characterized by the inter-dimer bridge of a NO molecule as the intermediate state prior to NO dissociation. Although the energy of the inter-dimer bridge is higher than that of the intra-dimer one, our suggestion is supported by the ab initio nudged elastic band calculations showing that the energy barrier for the inter-dimer bridge formation is much lower. The growth mechanism of an ultrathin Si oxynitride layer is also investigated via consecutive NO reactions simulation. The simulation reveals the mechanism of self-limiting reaction at low temperature and the time evolution of the depth profile of N and O atoms depending on the process temperature, which would guide to optimize the oxynitridation process condition.

  14. Growth Kinetics and Modeling of Direct Oxynitride Growth with NO-O2 Gas Mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Everist, Sarah; Nelson, Jerry; Sharangpani, Rahul; Smith, Paul Martin; Tay, Sing-Pin; Thakur, Randhir

    1999-05-03

    We have modeled growth kinetics of oxynitrides grown in NO-O2 gas mixtures from first principles using modified Deal-Grove equations. Retardation of oxygen diffusion through the nitrided dielectric was assumed to be the dominant growth-limiting step. The model was validated against experimentally obtained curves with good agreement. Excellent uniformity, which exceeded expected walues, was observed.

  15. Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Haining; Kim, Seungchul; Lee, Kwang-Ryeol, E-mail: krlee@kist.re.kr [Computational Science Research Center, Korea Institute of Science and Technology, 5, Hwarangno 14-gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of); Department of Nanomaterial Science and Technology, Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113 (Korea, Republic of); Srivastava, Pooja; Choi, Keunsu [Computational Science Research Center, Korea Institute of Science and Technology, 5, Hwarangno 14-gil, Seongbuk-gu, Seoul 02792 (Korea, Republic of)

    2016-03-28

    Initial stage of oxynitridation process of Si substrate is of crucial importance in fabricating the ultrathin gate dielectric layer of high quality in advanced MOSFET devices. The oxynitridation reaction on a relaxed Si(001) surface is investigated via reactive molecular dynamics (MD) simulation. A total of 1120 events of a single nitric oxide (NO) molecule reaction at temperatures ranging from 300 to 1000 K are statistically analyzed. The observed reaction kinetics are consistent with the previous experimental or calculation results, which show the viability of the reactive MD technique to study the NO dissociation reaction on Si. We suggest the reaction pathway for NO dissociation that is characterized by the inter-dimer bridge of a NO molecule as the intermediate state prior to NO dissociation. Although the energy of the inter-dimer bridge is higher than that of the intra-dimer one, our suggestion is supported by the ab initio nudged elastic band calculations showing that the energy barrier for the inter-dimer bridge formation is much lower. The growth mechanism of an ultrathin Si oxynitride layer is also investigated via consecutive NO reactions simulation. The simulation reveals the mechanism of self-limiting reaction at low temperature and the time evolution of the depth profile of N and O atoms depending on the process temperature, which would guide to optimize the oxynitridation process condition.

  16. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  17. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  18. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1993-04-01

    This report describes work to improve the performance of solar cells by improving the electrical and optical properties of their transparent conducting oxides (TCO) layers. Boron-doped zinc-oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar-flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range between 300{degrees}C and 420{degrees}C. When the deposition temperature was above 320{degrees}C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane. Films deposited from 0.07% diethyl zinc and 2.4% tert-butanol have electron densities between 3.5 {times} 10{sup 20} cm{sup {minus}3} and 5.5 {times} 10{sup 20} cm{sup {minus}3}, conductivities between 250 {Omega}{sup {minus}1} and 2500 {Omega}{sup {minus}1} and mobilities between 2.5 cm{sup 2}/V-s and 35.0 cm{sup 2}/V-s, depending on dopant concentration, film thickness, and deposition temperature. Optical measurements show that the maximum infrared reflectance of the doped films is close to 90%, compared to about 20% for undoped films. Film visible absorption and film conductivity were found to increase with film thickness. The ratio of conductivity to visible absorption coefficient for doped films was between 0.1 {Omega} and 1.1 {Omega}{sup {minus}1}. The band gap of the film changes from 3.3 eV to 3.7 eV when the film is doped with 0.012% diborane.

  19. Macroscopic Optomechanically Induced Transparency

    Science.gov (United States)

    Pate, Jacob; Castelli, Alessandro; Martinez, Luis; Thompson, Johnathon; Chiao, Ray; Sharping, Jay

    Optomechanically induced transparency (OMIT) is an effect wherein the spectrum of a cavity resonance is modified through interference between coupled excitation pathways. In this work we investigate a macroscopic, 3D microwave, superconducting radio frequency (SRF) cavity incorporating a niobium-coated, silicon-nitride membrane as the flexible boundary. The boundary supports acoustic vibrational resonances, which lead to coupling with the microwave resonances of the SRF cavity. The theoretical development and physical understanding of OMIT for our macroscopic SRF cavity is the same as that for other recently-reported OMIT systems despite vastly different optomechanical coupling factors and device sizes. Our mechanical oscillator has a coupling factor of g0 = 2 π . 1 ×10-5 Hz and is roughly 38 mm in diameter. The Q = 5 ×107 for the SRF cavity allows probing of optomechanical effects in the resolved sideband regime.

  20. Al-oxynitride interfacial layer investigations for Pr{sub X}O{sub Y} on SiC and Si

    Energy Technology Data Exchange (ETDEWEB)

    Henkel, K; Karavaev, K; Torche, M; Schwiertz, C; Burkov, Y; Schmeisser, D [Brandenburgische Technische Universitaet Cottbus, Angewandte Physik-Sensorik, K-Wachsmann-Allee 17, 03046 Cottbus (Germany)], E-mail: henkel@tu-cottbus.de

    2008-01-15

    We investigate the dielectric properties of Praseodymium based oxides Pr{sub X}O{sub Y} by preparing MIS (metal insulator semiconductor) structures consisting of Pr{sub X}O{sub Y} as a high-k insulating layer and silicon (Si) or silicon carbide (SiC) as semiconductor substrates. The use of a buffer layer between Pr{sub X}O{sub Y} and the semiconductor is necessary as we found deleterious reactions between these materials such as silicate and graphite formation. Possessing a higher permittivity value ({epsilon}{sub r}) than silicon dioxide (SiO{sub 2}) and good lattice matching in conjunction with similar thermal expansion coefficient to SiC, we focus on aluminum oxynitride (AlON) as a suitable buffer layer for this high-k/wide-bandgap system. In our spectroscopic investigations we found a decrease or indeed prevention of silicon diffusion into the oxide and an increased Pr{sub 2}O{sub 3} fraction after deposition. In electrical characterizations of Pr{sub X}O{sub Y}/AlON stacks we found considerable improvements in the leakage current by several orders on both substrates, especially on silicon where we obtain values down to 10{sup -7}A/cm{sup 2} at a CET (capacitance equivalent thickness) of 4nm. We observed interface state densities in the range of 5 x 10{sup 11}-1 x 10{sup 12}/eVcm{sup 2} and 1-5 x 10{sup 12}/eVcm{sup 2} on Si and SiC, respectively.

  1. Microporosity and CO2 Capture Properties of Amorphous Silicon Oxynitride Derived from Novel Polyalkoxysilsesquiazanes

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Honda, Sawao; Daiko, Yusuke

    2018-01-01

    Polyalkoxysilsesquiazanes ([ROSi(NH)1.5]n, ROSZ, R = Et, nPr, iPr, nBu, sBu, nHex, sHex, cHex, decahydronaphthyl (DHNp)) were synthesized by ammonolysis at −78 °C of alkoxytrichlorosilane (ROSiCl3), which was isolated by distillation as a reaction product of SiCl4 and ROH. The simultaneous thermogravimetric and mass spectrometry analyses of the ROSZs under helium revealed a common decomposition reaction, the cleavage of the oxygen–carbon bond of the RO group to evolve alkene as a main gaseous species formed in-situ, leading to the formation of microporous amorphous Si–O–N at 550 °C to 800 °C. The microporosity in terms of the peak of the pore size distribution curve located within the micropore size range (micropore volume, as well as the specific surface area (SSA) of the Si–O–N, increased consistently with the molecular size estimated for the alkene formed in-situ during the pyrolysis. The CO2 capture capacity at 0 °C of the Si–O–N material increased consistently with its SSA, and an excellent CO2 capture capacity of 3.9 mmol·g−1 at 0 °C and CO2 1 atm was achieved for the Si–O–N derived from DHNpOSZ having an SSA of 750 m2·g−1. The CO2 capture properties were further discussed based on their temperature dependency, and a surface functional group of the Si–O–N formed in-situ during the polymer/ceramics thermal conversion. PMID:29534056

  2. Microporosity and CO₂ Capture Properties of Amorphous Silicon Oxynitride Derived from Novel Polyalkoxysilsesquiazanes.

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Honda, Sawao; Daiko, Yusuke; Iwamoto, Yuji

    2018-03-13

    Polyalkoxysilsesquiazanes ([ROSi(NH) 1.5 ] n , ROSZ, R = Et, nPr, iPr, nBu, sBu, nHex, sHex, cHex, decahydronaphthyl (DHNp)) were synthesized by ammonolysis at -78 °C of alkoxytrichlorosilane (ROSiCl₃), which was isolated by distillation as a reaction product of SiCl₄ and ROH. The simultaneous thermogravimetric and mass spectrometry analyses of the ROSZs under helium revealed a common decomposition reaction, the cleavage of the oxygen-carbon bond of the RO group to evolve alkene as a main gaseous species formed in-situ, leading to the formation of microporous amorphous Si-O-N at 550 °C to 800 °C. The microporosity in terms of the peak of the pore size distribution curve located within the micropore size range (derived from DHNpOSZ having an SSA of 750 m²·g -1 . The CO₂ capture properties were further discussed based on their temperature dependency, and a surface functional group of the Si-O-N formed in-situ during the polymer/ceramics thermal conversion.

  3. Hybrid Coupling of Laser Light sources to Silicon (Oxy)Nitride Based Waveguides

    NARCIS (Netherlands)

    Krijger, A.J.T. de; Bekman, H.H.P.T.

    1997-01-01

    An efficient method was developed to couple a diode laser to a high contrast waveguides. The laserdiodes were mounted with sub-micron precision using a thermocompression mounting technique. An AlGaAs (λ = 850 nm) laserdiode was coupled to a SiON based slab waveguide (efficiency η EQ 25 - 30%) and to

  4. Chemical and structural order in silicon oxynitrides by methods of surface physics

    Science.gov (United States)

    Finster, J.; Heeg, J.; Klinkenberg, E.-D.

    A large number of thin amorphous layers of SiO xN y and several (crystalline) reference compounds (SiO 2, Si 3N 4, Si 2N 2O) are studied. Although XANES and SEXAFS are well sulted to derive structural and chemical order, for these compounds many problems remain to be solved. We show how core level spectra (XPS, AES) can be used to gain such information (e.g. random bonding structure, N coordination, oxidation behaviour).

  5. Activity and stability of a <> oxynitride in the dehydrogenation of isobutane

    Energy Technology Data Exchange (ETDEWEB)

    Delsarte, S.; Grange, P. [Univ. Catholique de Louvain (Belgium). Unite de Catalyse et Chimie des Materiaux Divises; Laurent, Y. [Lab. de Chimie des Materiaux, Univ. de Rennes 1, Rennes (France)

    2000-07-01

    Isobutane dehydrogenation was studied on platinum impregnated mixed aluminium gallium phosphorus oxide and oxynitride, in a continuous, flow micro-reactor at 500-550 C. Comparison of the <> and <> shows the importance of nitridation on the acido-basic properties of the catalyst. A deactivation of the catalyst, due to the deposition of carbonaceous species on the surface, was observed. As the properties of the oxynitride would be altered by a regeneration treatment at high temperature with flowing oxygen, the possibility of decreasing the deactivation rate by decreasing the reaction temperature and by adding hydrogen to the reactant mixture was explored. Catalytic tests, carried out at different hydrogen partial pressures, showed that the hydrogen inhibits the carbon deposition on the surface of the catalyst and thus increases the catalytic stability. (orig.)

  6. Aerospace Transparency Research Compendium

    National Research Council Canada - National Science Library

    Pinkus, Alan

    2003-01-01

    ... (ARRL), located at Wright-Patterson AFB OH, has advanced aerospace transparency technology through the investigative research of numerous optical and visual parameters inherent in aerospace transparencies...

  7. 10-fold enhancement in light-driven water splitting using niobium oxynitride microcone array films

    KAUST Repository

    Shaheen, Basamat

    2016-03-26

    We demonstrate, for the first time, the synthesis of highly ordered niobium oxynitride microcones as an attractive class of materials for visible-light-driven water splitting. As revealed by the ultraviolet photoelectron spectroscopy (UPS), photoelectrochemical and transient photocurrent measurements, the microcones showed enhanced performance (~1000% compared to mesoporous niobium oxide) as photoanodes for water splitting with remarkable stability and visible light activity. © 2016 Elsevier B.V. All rights reserved.

  8. Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

    DEFF Research Database (Denmark)

    Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune

    2015-01-01

    The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemical...... properties and microstructure of the films. Low pressure and moderate power are associated with lower plasma density, higher electron temperature, higher plasma potential and larger diffusion length for sputtered particles. This combination of parameters favors the presence of more atomic nitrogen, a fact...

  9. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  10. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  11. Electronic structure simulation of chromium aluminum oxynitride by discrete variational-X{alpha} method and X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Youngmin; Chang, Hyunju; Lee, Jae Do [Korea Research Inst. of Chemical Technology, Taejon (Korea); Kim, Eunah; No, Kwangsoo [Korea Advanced Inst. of Science and Technology, Taejon (Korea)

    2002-09-01

    We use a first-principles discrete variational (DV)-X{alpha} method to investigate the electronic structure of chromium aluminum oxynitride. When nitrogen is substituted for oxygen in the Cr-Al-O system, the N2p level appears in the energy range between O2p and Cr3d levels. Consequently, the valence band of chromium aluminum oxynitride becomes broader and the band gap becomes smaller than that of chromium aluminum oxide, which is consistent with the photoelectron spectra for the valence band using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). We expect that this valence band structure of chromium aluminum oxynitride will modify the transmittance slope which is a requirement for photomask application. (author)

  12. Electronic structure simulation of chromium aluminum oxynitride by discrete variational-Xα method and X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Choi, Youngmin; Chang, Hyunju; Lee, Jae Do; Kim, Eunah; No, Kwangsoo

    2002-01-01

    We use a first-principles discrete variational (DV)-Xα method to investigate the electronic structure of chromium aluminum oxynitride. When nitrogen is substituted for oxygen in the Cr-Al-O system, the N2p level appears in the energy range between O2p and Cr3d levels. Consequently, the valence band of chromium aluminum oxynitride becomes broader and the band gap becomes smaller than that of chromium aluminum oxide, which is consistent with the photoelectron spectra for the valence band using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). We expect that this valence band structure of chromium aluminum oxynitride will modify the transmittance slope which is a requirement for photomask application. (author)

  13. Transparent oxide electronics from materials to devices

    CERN Document Server

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  14. NEXAFS characterization and reactivity studies of bimetallic vanadium molybdenum oxynitride hydrotreating catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Kapoor, R.; Oyama, S.T. [Virginia Polytechnic Inst., Blacksburg, VA (United States); Fruehberger, B.; Chen, J.G. [Exxon Research and Engineering Company, Annandale, NJ (United States)

    1997-02-27

    The surface and bulk compositions of vanadium molybdenum oxynitride (V{sub 2}MoO{sub 1.7}N{sub 2.4}), prepared by temperature-programmed reaction (TPR) of vanadium molybdenum oxide (V{sub 2}MoO{sub 8}) with ammonia, have been characterized using near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS data were recorded at the K-edges of nitrogen and oxygen, the L-edge of vanadium, and the M-edge of molybdenum. The nitrogen K-edge region of V-Mo oxynitride shows the characteristic NEXAFS features of early-transition-metal nitrides, although these features are different from those of either VN or Mo{sub 2}N. Furthermore, comparison of the electron yield and fluorescence yield measurements also reveals that the oxidation state is different for vanadium near the surface region and for vanadium in the bulk, which is estimated to be 2.8 {+-} 0.3 and 3.8 {+-} 0.3, respectively. The oxidation state of bulk molybdenum is also estimated to be 4.4 {+-} 0.3. The X-ray diffraction pattern shows that the bulk phase of the bimetallic oxide is different from the pure monometallic oxide phases but the oxynitride has a cubic structure that resembles the pure vanadium and molybdenum nitride phases. The V-Mo oxide as prepared shows a preferential orientation of [001] crystallographic planes which is lost during the nitridation process. This shows that the solid state transformation V{sub 2}MoO{sub 8} {yields} V{sub 2}MoO{sub 1.7}N{sub 2.4} is not topotactic. 27 refs., 8 figs., 1 tab.

  15. Dissolution of lanthanide alumino-silicate oxynitride glasses

    Science.gov (United States)

    Bois, L.; Barré, N.; Guillopé, S.; Guittet, M. J.; Gautier-Soyer, M.; Duraud, J. P.; Trocellier, P.; Verdier, P.; Laurent, Y.

    2000-01-01

    The aqueous corrosion behavior of lanthanide aluminosilicate glasses has been studied under static conditions ( T=96°C, duration=1 and 3 months, glass surface area/leachate volume, S/ V=0.3 cm -1) by means of solution and solid analyses. It was found that these glasses exhibit a high chemical durability. The influence of yttrium, magnesium and nitrogen, which are supposed to improve the mechanical properties, on the chemical durability, has been investigated. After a one-month experiment, lanthanum and yttrium releases were found to be about 10 -7 mol l -1, while silicon and aluminum releases were about 10 -5 mol l -1. Yttrium seems to improve the chemical durability. The presence of nitrogen does not seem to modify the glass constituents releases, but seems to improve the surface state of the altered glass. XPS experiments reveal that lanthanum and yttrium are more concentrated near the surface (20-30 Å) of the glass after the leaching test.

  16. Transparency and product variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    2009-01-01

    We study long run effects of transparency on the consumer side in a differentiated market. Only some consumers know prices. Increasing transparency reduces the equilibrium price, profit and firm entry. This improves welfare and, in most cases, average consumer utility....

  17. Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

    2011-11-01

    Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

  18. Optimal Central Bank Transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  19. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  20. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2010-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  1. Transparency and Product Variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    We study the long run e¤ects of transparency in a circular town model of a differentiated market. The market is not fully transparent on the consumer side: A fraction of consumers are uninformed about prices. Increasing transparency reduces the equilibrium price, profit and entry of firms. This i...

  2. Transparency in Health Programmes

    OpenAIRE

    Vian, Taryn

    2008-01-01

    Transparency is an important tool for good governance, helping to expose abusive practices including fraud, patronage, corruption, and other abuses of power. Increasing transparency can also enhance accountability by providing performance management information and exposing policies and procedures to oversight. This U4 Brief discusses the role of transparency in preventing corruption in the health sector.

  3. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    voluntarism. I argue that transparency to factual questions occurs in practical deliberation in ways parallel to transparency in doxastic deliberation. I argue that this should make us reconsider the appeal to transparency in arguments against doxastic voluntarism, and the wider issue of distinguishing...... theoretical from practical rationality....

  4. Innovative transparent armour concepts

    NARCIS (Netherlands)

    Carton, E.P.; Broos, J.P.F.

    2011-01-01

    Ever since WWII transparent armour consists of a multi-layer of glass panels bonded by thin polymer bond-films using an autoclave process. TNO has worked on the development of innovative transparent armour concepts that are lighter and a have better multi-hit capacity. Two new transparent armour

  5. The art of transparency.

    Science.gov (United States)

    Sayim, Bilge; Cavanagh, Patrick

    2011-01-01

    Artists throughout the ages have discovered a number of techniques to depict transparency. With only a few exceptions, these techniques follow closely the properties of physical transparency. The two best known properties are X-junctions and the luminance relations described by Metelli. X-junctions are seen where the contours of a transparent material cross contours of the surface behind; Metelli's constraints on the luminance relations between the direct and filtered portions of the surface specify a range of luminance values that are consistent with transparency. These principles have been used by artists since the time of ancient Egypt. However, artists also discovered that stimuli can be seen as transparent even when these physical constraints are not met. Ancient Greek artists, for example, were able to depict transparent materials in simple black-and-white line drawings. Artists also learned how to represent transparency in cases where neither X-junctions nor Metelli's constraints could apply: for example, where no portions of the objects behind the transparent material extend beyond it. Many painters convincingly portrayed transparency in these cases by depicting the effects the transparent medium would have on material or object properties. Here, we show how artists employed these and other techniques revealing their anticipation of current formalizations of perceived transparency, and we suggest new, as-yet-untested principles.

  6. Physical properties evolution of sputtered zirconium oxynitride films: effects of the growth temperature

    International Nuclear Information System (INIS)

    Rizzo, A; Signore, M A; Mirenghi, L; Piscopiello, E; Tapfer, L

    2009-01-01

    Zirconium oxynitride (ZrNO) films were deposited by RF reactive magnetron sputtering in water vapour-nitrogen atmosphere varying the deposition temperature from RT to 600 0 C. Optical analysis, x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) are the employed characterization techniques to investigate the influence of the substrate temperature on the films physical properties. It was found that the variation of the substrate temperature from RT to 600 0 C caused a structural transition from cubic phase of Zr 2 ON 2 to ZrN one, as confirmed by TEM observations too. In particular, Forouhi-Bloomer dispersion equations for optical parameters (n and k) and deconvolution of XPS spectra allowed further chemical properties be elucidated. They also permitted identification of two oxynitride phases, γ phase (E g = 1.94 eV) and β phase (E g = 1.7 eV), and an over-stoichiometric nitride one. The use of [E c - E v ] values helped to confirm further the distinction between (γ, β)-phases and N-rich zirconium nitride compound, which is unachievable by using only E g values.

  7. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

    2017-01-30

    Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  8. On the phase formation of sputtered hafnium oxide and oxynitride films

    International Nuclear Information System (INIS)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-01-01

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

  9. Physical properties evolution of sputtered zirconium oxynitride films: effects of the growth temperature

    Energy Technology Data Exchange (ETDEWEB)

    Rizzo, A; Signore, M A; Mirenghi, L; Piscopiello, E; Tapfer, L [ENEA, Department of Physical Technologies and New Materials, SS7, Appia, km 706, 72100 Brindisi (Italy)

    2009-12-07

    Zirconium oxynitride (ZrNO) films were deposited by RF reactive magnetron sputtering in water vapour-nitrogen atmosphere varying the deposition temperature from RT to 600 {sup 0}C. Optical analysis, x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) are the employed characterization techniques to investigate the influence of the substrate temperature on the films physical properties. It was found that the variation of the substrate temperature from RT to 600 {sup 0}C caused a structural transition from cubic phase of Zr{sub 2}ON{sub 2} to ZrN one, as confirmed by TEM observations too. In particular, Forouhi-Bloomer dispersion equations for optical parameters (n and k) and deconvolution of XPS spectra allowed further chemical properties be elucidated. They also permitted identification of two oxynitride phases, {gamma} phase (E{sub g} = 1.94 eV) and {beta} phase (E{sub g} = 1.7 eV), and an over-stoichiometric nitride one. The use of [E{sub c} - E{sub v}] values helped to confirm further the distinction between ({gamma}, {beta})-phases and N-rich zirconium nitride compound, which is unachievable by using only E{sub g} values.

  10. Eu-doped barium aluminium oxynitride with the ß-alumina-type structure as new blue-emitting phosphor

    NARCIS (Netherlands)

    Jansen, S.R.; Migchels, J.M.; Hintzen, H.T.J.M.; Metselaar, R.

    1999-01-01

    Attractive new blue-emitting phosphors for use in low-pressure mercury gas discharge lamps are synthesized by Eu-substitution in the barium aluminum oxynitride host lattice with the -alumina-type structure. The emission spectra of these phosphors for 254 nm excitation show a band at about 450 nm

  11. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    2015-01-01

    organizational effectiveness and widened democratic practice. Yet, with its most common operationalization, as information, transparency reinstalls a 'purified' notion of communication devoid of mystery, inaccuracy, and (mis)representation. We apply transparency to itself by unpacking its implicit model......The current emphasis on organizational transparency signifies a growing demand for insight, clarity, accountability, and participation. Holding the promise of improved access to valid and trustworthy knowledge about organizations, the transparency pursuit has great potential for enhanced...... of communication and critiquing its obliviousness to the representative nature of transparency-related messages and the attendant complexities of motivation. This critique interrogates the ambiguities and ambivalence of the transparency pursuit and demonstrates how the goals of organizational transparency...

  12. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  13. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie; Dré on, Julie; Rucavado, Esteban; Mews, Mathias; Koida, Takashi; Boccard, Mathieu; Werner, Jé ré mie; Geissbü hler, Jonas; Lö per, Philipp; Morales-Masis, Monica; Korte, Lars; De Wolf, Stefaan; Balllif, Christophe

    2018-01-01

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient

  14. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  15. Transparency in Organizing

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa

    This dissertation provides a critical analysis of transparency in the context of organizing. The empirical material is based on qualitative studies of international cooperative organizations. The dissertation seeks to contribute to transparency and organizing scholarship by adopting a communication...... centred approach to explore the implications of pursuing ideals of transparency in organizational relationships. The dissertation is comprised of four papers each contributing to extant debates in organizational studies and transparency literature. The findings indicate that transparency, in contrast...... to being a solution for efficiency and democratic organizing, is a communicatively contested process which may lead to unintended consequences. The dissertation shows that transparency is performative: it can impact authority by de/legitimating action, shape the processes of organizational identity co...

  16. Structural analysis and characterization of layer perovskite oxynitrides made from Dion-Jacobson oxide precursors

    International Nuclear Information System (INIS)

    Schottenfeld, Joshua A.; Benesi, Alan J.; Stephens, Peter W.; Chen, Gugang; Eklund, Peter C.; Mallouk, Thomas E.

    2005-01-01

    A three-layer oxynitride Ruddlesden-Popper phase Rb 1+x Ca 2 Nb 3 O 10-x N x .yH 2 O (x=0.7-0.8, y=0.4-0.6) was synthesized by ammonialysis at 800 o C from the Dion-Jacobson phase RbCa 2 Nb 3 O 10 in the presence of Rb 2 CO 3 . Incorporation of nitrogen into the layer perovskite structure was confirmed by XPS, combustion analysis, and MAS NMR. The water content was determined by thermal gravimetric analysis and the rubidium content by ICP-MS. A similar layered perovskite interconversion occurred in the two-layer Dion-Jacobson oxide RbLaNb 2 O 7 to yield Rb 1+x LaNb 2 O 7-x N x .yH 2 O (x=0.7-0.8, y=0.5-1.0). Both compounds were air- and moisture-sensitive, with rapid loss of nitrogen by oxidation and hydrolysis reactions. The structure of the three-layer oxynitride Rb 1.7 Ca 2 Nb 3 O 9.3 N 0.7 .0.5H 2 O was solved in space group P4/mmm with a=3.887(3) and c=18.65(1)A, by Rietveld refinement of X-ray powder diffraction data. The two-layer oxynitride structure Rb 1.8 LaNb 2 O 6.3 N 0.7 .1.0H 2 O was also determined in space group P4/mmm with a=3.934(2) and c=14.697(2)A. GSAS refinement of synchrotron X-ray powder diffraction data showed that the water molecules were intercalated between a double layer of Rb+ ions in both the two- and three-layer Ruddlesden-Popper structures. Optical band gaps were measured by diffuse reflectance UV-vis for both materials. An indirect band gap of 2.51eV and a direct band gap of 2.99eV were found for the three-layer compound, while an indirect band gap of 2.29eV and a direct band gap of 2.84eV were measured for the two-layer compound. Photocatalytic activity tests of the three-layer compound under 380nm pass filtered light with AgNO 3 as a sacrificial electron acceptor gave a quantum yield of 0.025% for oxygen evolution

  17. Sputtered titanium oxynitride coatings for endosseous applications: Physical and chemical evaluation and first bioactivity assays

    Energy Technology Data Exchange (ETDEWEB)

    Banakh, Oksana, E-mail: oksana.banakh@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Moussa, Mira, E-mail: mira.moussa@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Matthey, Joel, E-mail: joel.matthey@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Pontearso, Alessandro, E-mail: alessandro.pontearso@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Cattani-Lorente, Maria, E-mail: maria.cattani-lorente@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Sanjines, Rosendo, E-mail: rosendo.sanjines@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics, Station 3, CH-1015 Lausanne (Switzerland); Fontana, Pierre, E-mail: Pierre.Fontana@hcuge.ch [Haemostasis laboratory, Geneva University Hospital, Rue Gabrielle-Perret-Gentil 4, CH-1205 Geneva (Switzerland); Wiskott, Anselm, E-mail: anselm.wiskott@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Durual, Stephane, E-mail: stephane.durual@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland)

    2014-10-30

    Highlights: • Titanium oxynitride coatings (TiN{sub x}O{sub y}) with chemical composition ranging from TiN to TiO{sub 2} were deposited by magnetron sputtering from a metallic Ti target using a mixture of O{sub 2} + N{sub 2}. • The coatings structure as well as physical, chemical and mechanical properties progressively changes as a function of oxygen content in the TiN{sub x}O{sub y.} • All TiN{sub x}O{sub y} coatings show a significantly higher level of bioactivity as compared to bare Ti substrates (1.2 to 1.4 fold increase in cell proliferation). Despite variations in surface chemistry, topography and surface tension observed on films as a function of chemical composition, no significant differences in the films’ biological activity were observed after 3 days of testing. - Abstract: Titanium oxynitride coatings (TiN{sub x}O{sub y}) are considered a promising material for applications in dental implantology due to their high corrosion resistance, their biocompatibility and their superior hardness. Using the sputtering technique, TiN{sub x}O{sub y} films with variable chemical compositions can be deposited. These films may then be set to a desired value by varying the process parameters, that is, the oxygen and nitrogen gas flows. To improve the control of the sputtering process with two reactive gases and to achieve a variable and controllable coating composition, the plasma characteristics were monitored in-situ by optical emission spectroscopy. TiN{sub x}O{sub y} films were deposited onto commercially pure (ASTM 67) microroughened titanium plates by reactive magnetron sputtering. The nitrogen gas flow was kept constant while the oxygen gas flow was adjusted for each deposition run to obtain films with different oxygen and nitrogen contents. The physical and chemical properties of the deposited films were analyzed as a function of oxygen content in the titanium oxynitride. The potential application of the coatings in dental implantology was assessed by

  18. Transparency views by media

    International Nuclear Information System (INIS)

    Ikawa, Y.

    2007-01-01

    In this presentation, various problems surrounding the issues of transparency, such as 'What exactly should be transparent?' 'Is all that we want amounting only to transparency?' 'Is it possible to thoroughly implement transparency', etc., are discussed with due consideration for the viewpoints of the wide range of parties concerned involving areas of politics, administration, enterprises, media, individuals, and so on. First of all, the explanation is focused on how the transparency is recognised, as well as how it is regarded as important, for the public at large and the media. Then, based on the concept that transparency is required for what cannot be justified to be secret, we will contemplate what should be transparent in the areas of politics, administration and enterprises, using the case of nuclear issues as example. Next, the discussion will proceed to the point whether the achievement of transparency itself should be the ultimate goal, in the light of taking into consideration the standpoints of individuals and the receivers of the information, in addition to that of the administration, politics, and enterprises. In closing, we will discuss what the necessary measures will be to materialize the complete transparency on the basis of the discussions made thus far. (author)

  19. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  20. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  1. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  2. Ionic conductivities of lithium phosphorus oxynitride glasses, polycrystals, and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.; Bates, J.B.; Chakoumakos, B.C.; Sales, B.C.; Kwak, B.S.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Univ. of Kentucky, Lexington, KY (United States). Dept. of Chemistry

    1994-11-01

    Various lithium phosphorus oxynitrides have been prepared in the form of glasses, polycrystals, and thin films. The structures of these compounds were investigated by X-ray and neutron diffraction, X-ray photoelectron spectroscopy (XPS), and high-performance liquid chromatography (HPLC). The ac impedance measurements indicate a significant improvement of ionic conductivity as the result of incorporation of nitrogen into the structure. In the case of polycrystalline Li{sub 2.88}PO{sub 3.73}N{sub 0.14} with the {gamma}-Li{sub 3}PO{sub 4} structure, the conductivity increased by several orders of magnitude on small addition of nitrogen. The highest conductivities in the bulk glasses and thin films were found to be 3.0 {times} 10{sup -7} and 8.9 {times} 10{sup -7} S{center_dot}cm{sup -1} at 25{degrees}C, respectively.

  3. Ionic conductivities of lithium phosphorus oxynitride glasses, polycrystals, and thin films

    International Nuclear Information System (INIS)

    Wang, B.; Bates, J.B.; Chakoumakos, B.C.; Sales, B.C.; Kwak, B.S.; Zuhr, R.A.; Robertson, J.D.

    1994-11-01

    Various lithium phosphorus oxynitrides have been prepared in the form of glasses, polycrystals, and thin films. The structures of these compounds were investigated by X-ray and neutron diffraction, X-ray photoelectron spectroscopy (XPS), and high-performance liquid chromatography (HPLC). The ac impedance measurements indicate a significant improvement of ionic conductivity as the result of incorporation of nitrogen into the structure. In the case of polycrystalline Li 2.88 PO 3.73 N 0.14 with the γ-Li 3 PO 4 structure, the conductivity increased by several orders of magnitude on small addition of nitrogen. The highest conductivities in the bulk glasses and thin films were found to be 3.0 x 10 -7 and 8.9 x 10 -7 S·cm -1 at 25 degrees C, respectively

  4. Transparency of Banking Supervisors

    NARCIS (Netherlands)

    Liedorp, Franka; Mosch, Robert; van der Cruijsen, Carin; de Haan, Jakob

    Following Eijffinger and Geraats (2006), this paper constructs an index of transparency of banking supervisors that takes political, economic, procedural, policy, and operational transparency into account. Based on a survey, the index is constructed for 24 banking supervisors. The average score is

  5. Epilogue: degrees of transparency

    NARCIS (Netherlands)

    Hengeveld, K.

    2011-01-01

    In this epilogue the results of the analyses of four different languages in the preceding papers are compared. It is shown that the degrees of transparency of these languages can be represented on an implicational scale, and that the features themselves can be ranked on a transparency scale as well.

  6. On color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1989-10-01

    A quantum mechanical treatment of high momentum transfer nuclear processes is presented. Color transparency, the suppression of initial and final state interaction effects, is shown to arise from using the closure approximation. New conditions for the appearance of color transparency are derived

  7. Understanding modern transparency

    NARCIS (Netherlands)

    Meijer, A.J.|info:eu-repo/dai/nl/172436729

    2009-01-01

    Proponents and opponents fiercely debate whether computer-mediated transparency has a positive effect on trust in the public sector. This article enhances our understanding of transparency by presenting three perspectives: a premodern, modern and post-modern perspective, and analyzing the basic

  8. Introduction: The Transparency Issue

    NARCIS (Netherlands)

    Teurlings, J.; Stauff, M.

    2014-01-01

    Besides giving an overview on the individual contributions, this introduction to the special issue on transparency delineates a conceptual context for a critical analysis of the contemporary discourse on transparency and the media mechanisms related to it. It focuses on three ambivalences inherent

  9. EU Transparency Register

    NARCIS (Netherlands)

    Mańko, R.; Thiel, M.; Bauer, E.

    2014-01-01

    Widespread lobbying in the EU institutions has led to criticism regarding the transparency and accountability of the EU's decision-making process. In response to these concerns, the Parliament set up its transparency register in 1995, followed by the Commission in 2008. The two institutions merged

  10. Advice on Admissions Transparency

    Science.gov (United States)

    Australian Government Tertiary Education Quality and Standards Agency, 2018

    2018-01-01

    Admissions transparency means that prospective domestic undergraduate students can easily find good quality admissions information that allows them to compare courses and providers and make informed study choices. In October 2016 the Higher Education Standards Panel (HESP) made recommendations to achieve greater transparency in higher education…

  11. Privacy transparency patterns

    NARCIS (Netherlands)

    Siljee B.I.J.

    2015-01-01

    This paper describes two privacy patterns for creating privacy transparency: the Personal Data Table pattern and the Privacy Policy Icons pattern, as well as a full overview of privacy transparency patterns. It is a first step in creating a full set of privacy design patterns, which will aid

  12. Atmospheric pressure chemical vapour deposition of the nitrides and oxynitrides of vanadium, titanium and chromium

    International Nuclear Information System (INIS)

    Elwin, G.S.

    1999-01-01

    A study has been made into the atmospheric pressure chemical vapour deposition of nitrides and oxynitrides of vanadium, titanium and chromium. Vanadium tetrachloride, vanadium oxychloride, chromyl chloride and titanium tetrachloride have been used as precursors with ammonia, at different flow conditions and temperatures. Vanadium nitride, vanadium oxynitride, chromium oxynitride, titanium/vanadium nitride and titanium/chromium oxynitride have been deposited as thin films on glass. The APCVD reaction of VCl 4 and ammonia leads to films with general composition VN x O y . By raising the ammonia concentration so that it is in excess (0.42 dm 3 min -1 VCl 4 with 1.0 dm 3 min -1 NH 3 at 500 deg. C) a film has been deposited with the composition VN 0.8 O 0.2 . Further investigation discovered similar elemental compositions could be reached by deposition at 350 deg. C (0.42 dm 3 min -1 VCl 4 with 0.5 dm 3 min -1 NH 3 ), followed by annealing at 650 deg. C, and cooled under a flow of ammonia. Only films formed below 400 deg. C were found to contain carbon or chlorine ( 3 and ammonia also lead to films of composition VN x O y the oxygen to nitrogen ratios depending on the deposition conditions. The reaction Of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.2 dm 3 min -1 ) at 500 deg. C lead to a film of composition VN 0. 47O 1.06 . The reaction of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.5 dm 3 min -1 ) at 650 deg. C lead to a film of composition VN 0.63 O 0.41 . The reaction of chromyl chloride with excess ammonia led to the formation of chromium oxide (Cr 2 O 3 ) films. Mixed metal films were prepared from the reactions of vanadium tetrachloride, titanium tetrachloride and ammonia to prepare V x Ti y N z and chromyl chloride, titanium tetrachloride and ammonia to form TiCr x O y N z . Both reactions produced the intended mixed coating but it was found that the vanadium / titanium nitride contained around 10 % vanadium whatever the conditions used. Oxygen contamination

  13. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  14. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    and trustworthy knowledge about contemporary organizations, the transparency discourse has significant democratic potential. Yet, its most common operationalization – as information availability – reinstalls a “purified” notion of communication devoid of mystery, inaccuracy and misrepresentation. In this paper......The current emphasis on organizational and institutional transparency – driven by NGOs, inquisitive media, critical investors and other engaged stakeholders – signifies a growing demand for insight, clarity, participation and democracy. Holding the promise of improved access to valid......, we apply transparency to itself by unpacking its implicit model of communication and critiquing its ignorance towards the representative nature of current transparency practices. The critique unfolds the ambiguous nature of the transparency pursuit and demonstrates how its desire for insight, clarity...

  15. Experimental realization of an on-chip all-optical analogue to electromagnetically induced transparency.

    Science.gov (United States)

    Xu, Qianfan; Sandhu, Sunil; Povinelli, Michelle L; Shakya, Jagat; Fan, Shanhui; Lipson, Michal

    2006-03-31

    We provide the first experimental observation of structure tuning of the electromagnetically induced transparency-like spectrum in integrated on-chip optical resonator systems. The system consists of coupled silicon ring resonators with 10 microm diameter on silicon, where the coherent interference between the two coupled resonators is tuned. We measured a transparency-resonance mode with a quality factor of 11,800.

  16. Study of the R-(Zr,W)-(O,N) (R = Y, Nd, Sm, Gd, Yb) oxynitride system

    Energy Technology Data Exchange (ETDEWEB)

    Tessier, Franck, E-mail: Franck.Tessier@univ-rennes1.fr [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France); Maillard, Pascal [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France); Orhan, Emmanuelle [Laboratoire Science des Procedes Ceramiques et Traitements de Surface, UMR CNRS 6638, Universite de Limoges, 123 Avenue Albert Thomas, 87060 Limoges cedex (France); Chevire, Francois [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France)

    2010-02-15

    The replacement of tantalum by the couple Zr/W within the RTa-O-N systems (R = Y, Nd, Sm, Gd, Yb), enables the preparation of novel oxide and oxynitride phases in the R-Zr-W-O-N system. R{sub 2}Zr{sub 2-x}W{sub x}O{sub 7+x} oxides exhibit the fluorite-type (x < 0.9) and scheelite (x {approx} 1) structures. Corresponding oxynitride compositions are of the fluorite-type and show different colors, for example in the case of ytterbium: pale yellow (x = 0.2 or 0.25), green (x = 0.5-0.8) and brown for the tungsten-rich samples (x = 0.9, 1). Photocatalytic activity measurements have been performed to investigate the overall water splitting behavior of these colored phases.

  17. Dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    1998-01-01

    This paper studies product market competition under a strategic transparency decision. Dominant investors can influence information collection in the financial market, and thereby corporate transparency, by affecting market liquidity or the cost of information collection. More transparency on a

  18. Dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    1999-01-01

    This paper studies product market competition under a strategic transparency decision. Dominant investors can influence information collection in the financial market, and thereby corporate transparency, by affecting market liquidity or the cost of information collection. More transparency on a

  19. Transparent lithium-ion batteries

    KAUST Repository

    Yang, Y.; Jeong, S.; Hu, L.; Wu, H.; Lee, S. W.; Cui, Y.

    2011-01-01

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent

  20. ELECTROKINETIC PROPERTIES, IN VITRO DISSOLUTION, AND PROSPECTIVE HEMOAND BIOCOMPATIBILITY OF TITANIUM OXIDE AND OXYNITRIDE FILMS FOR CARDIOVASCULAR STENTS

    Directory of Open Access Journals (Sweden)

    I. A. Khlusov

    2015-01-01

    Full Text Available A state of titanium oxide and oxynitride coatings on L316 steel has been studied before and after their contact with model biological fluids. Electrokinetic investigation in 1 mmol potassium chloride showed significant (more than 10 times fall of magnitude of electrostatic potential of thin (200–300 nm titanium films at pH changing in the range of 5–9 units during 2 h. Nevertheless, zeta-potential of all samples had negative charge under pH > 6.5. Long-term (5 weeks contact of samples with simulated body fluid (SBF promoted steel corrosion and titanium oxide and oxynitride films dissolution. On the other hand, sodium and chloride ions precipitation and sodium chloride crystals formation occurred on the samples. Of positive fact is an absence of calcification of tested artificial surfaces in conditions of long-term being in SBF solution. It is supposed decreasing hazard of fast thrombosis and loss of materials functional properties. According to in vitro experiment conducted, prospective biocompatibility of materials tested before and after their contact with SBF lines up following manner: Ti–O–N (1/3 > Ti–O–N (1/1, TiO2 > Steel. It may be explained by: 1 the corrosion-preventive properties of thin titanium oxide and oxynitride films;2 a store of surface negative charge for Ti–O–N (1/3 film; 3 minor augmentation of mass and thickness of titanium films connected with speed of mineralization processes on the interface of solution/solid body. At the same time, initial (before SBF contact differences of samples wettability became equal. Modifying effect of model biological fluids on physicochemical characteristics of materials tested (roughness enhancement, a reduction or reversion of surface negative potential, sharp augmentation of surface hydrofilicity should took into account under titanium oxide and oxynitride films formation and a forecast of their optimal biological properties as the materials for cardiovascular stents.

  1. A Dictionary for Transparency

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.

    2001-11-15

    There are many terms that are used in association with the U.S. Defense Threat Reduction Agency (DTRA) Transparency Project associated with the Mayak Fissile Materials Storage Facility. This is a collection of proposed definitions of these terms.

  2. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    2014-01-01

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show...... that the additional data disclosure increased trading activity, but also increased transactions costs through wider bid-ask spreads. Thus, in contrast to popular policy belief, the paper finds that more transparency need not improve market liquidity. Second, the paper finds a particularly strong immediate liquidity...... impact accompanied by altered trading behavior, which suggests a significant impact on institutional traders subscribing relatively early. Lastly, since the effective level of market transparency is bound to depend on how many traders are subscribing to the data, the study can empirically establish...

  3. Color transparency study group

    International Nuclear Information System (INIS)

    Appel, J.A.; Pordes, S.; Botts, J.; Bunce, G.; Farrar, G.

    1990-01-01

    The group studied the relatively new notion of color transparency, discussed present experimental evidence for the effect, and explored several ideas for future experiments. This write-up summarizes these discussions. 11 refs., 1 fig

  4. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show...... that the additional data disclosure increased trading activity, but also increased transactions costs through wider bid-ask spreads. Thus, in contrast to popular policy belief, the paper finds that more transparency need not improve market liquidity. Second, the paper finds a particularly strong immediate liquidity...... impact accompanied by altered trading behavior, which suggests a significant impact on institutional traders subscribing relatively early. Lastly, since the effective level of market transparency is bound to depend on how many traders are subscribing to the data, the study can empirically establish...

  5. What color transparency measures

    International Nuclear Information System (INIS)

    Jain, P.; Ralston, J.P.

    1992-01-01

    Color transparency is commonly accepted to be a prediction of perturbative QCD. However it is more a phenomenon probing the interface between the perturbative and nonperturbative regimes, leading to some intricacy in its theoretical description. In this paper we study the consequences of the impulse approximation to the theory in various quantum mechanical bases. We show that the fully interacting hadronic basis, which consists of eigenstates of the exact Hamiltonian in the presence of the nucleus, provides a natural basis to study color transparency. In this basis we can relate the quark wave function at a small transverse separation distance b 2 2 directly to transparency ratios measured in experiment. With the formalism, experiment can be used to map out the quark wave function in this region. We exhibit several loopholes in existing arguments predicting a rise in transparency ratios with energy, and suggest alternatives. Among the results, we argue that the theoretical prediction of a rising transparency ratio with energy may be on better footing for heavy-quark bound states than for relativistic light-quark systems. We also point out that transparency ratios can be constant with energy and not at variance with perturbative QCD

  6. Total dose hardening of buried insulator in implanted silicon-on-insulator structures

    International Nuclear Information System (INIS)

    Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

    1987-01-01

    Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

  7. X-ray absorption investigation of titanium oxynitride nanoparticles obtained from laser pyrolysis

    International Nuclear Information System (INIS)

    Simon, Pardis; March, Katia; Stéphan, Odile; Leconte, Yann; Reynaud, Cécile; Herlin-Boime, Nathalie; Flank, Anne-Marie

    2013-01-01

    Highlights: • Original Ti(O,N) nanoparticles with a TiO FCC structure were synthesized by laser pyrolysis. • EELS and XAS allows to demonstrate that the nanoparticles are a solid solution of N and O in Ti. • Upon heat treatment, oxidation occurs from the surface with survival of FCC contribution till 400 °C. • Optical properties (absorption in the visible range) can be adjusted through the control of oxidation state. - Abstract: This work presents a structural study by X-ray Absorption Spectroscopy (XAS) and Electron Energy-Loss Spectroscopy (EELS) of complex titanium oxynitride nanoparticles (Ti(O,N)), synthesized by laser pyrolysis from titanium tetraisopropoxide and ammonia as precursors. Previous structural characterizations obtained by XRD and XPS have shown that the nanoparticles present a TiO type face-centered cubic (FCC) structure but with three different oxidation degree for titanium. The synthesis of this kind of titanium oxide or oxynitride nanoparticles is very unusual. Moreover, their properties are highly dependent of their structure. EELS spectrum-imaging data were therefore used for mapping the different chemical species. These measurements reveal that the nanoparticles are composed of a FCC solid solution of nitrogen and oxygen in titanium. The local structure around Ti was then studied. XANES measurements show an absorption threshold corresponding to a global valence state between Ti 3+ and Ti 4+ , with a pre-edge structure characteristic of a mix between a face-centered cubic (FCC) structure and a disordered TiO 2 structure whereas the EXAFS signal is dominated by the contribution of the FCC structure. Oxidative heat-treatments have been performed from 250 to 450 °C in order to follow the transition towards the dioxide phase. EELS measurements show that the oxidation occurs from the surface of the nanoparticles. XAS show that this transition does not involve any other crystallographic phase than TiO 2 , mainly in its anatase form, and

  8. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  9. Limits of transparency of transparent conducting oxides

    Science.gov (United States)

    Peelaers, Hartwin

    A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

  10. Niobium-aluminum oxynitride prepared by ammonolysis of oxide precursor obtained through the citrate route

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Shinichi; Ohashi, Yoshio; Masubuchi, Yuji; Takeda, Takashi; Motohashi, Teruki [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan); Kikkawa, Shinichi, E-mail: kikkawa@eng.hokudai.ac.j [Graduate School of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)

    2009-08-12

    Oxynitrides in the (Nb{sub 1-x}Al{sub x})(O,N) quaternary system were prepared by ammonolysis of oxide precursor obtained through the citrate route. The products at 1000 deg. C were a mixture of Nb(N,O) and NbN{sub 0.95} at the niobium end (x = 0) and amorphous Al(O,N) at the aluminum end (x = 1). A new cubic compound (A) appeared mixed with Nb(N,O) in the compositional range 0.1 <= x <= 0.4. Its almost pure product was obtained at x = 0.5. The X-ray diffraction pattern was rock salt type (Nb{sub 0.56}Al{sub 0.44})(O{sub 0.38}N{sub 0.37}square{sub 025}) in F{sub m-3m} with a = 0.43481(1) nm. The product showed superconductivity with T{sub c} = 15 K. Its crystallinity was much improved and its superconducting volume fraction increased to 32% after its thermal annealing at 1100 deg. C in evacuated sealed tube. A second cubic compound (B), rock salt type Nb[(O,N){sub 0.85}square{sub 0.15}] with a = 0.434 nm, was observed mixed with amorphous Al(O,N) in the as-prepared products of the range 0.6 <= x <= 0.9.

  11. Supporting Transparency between Students

    DEFF Research Database (Denmark)

    Dalsgaard, Christian

    The paper presents the results of a case study that explores the potentials of weblogs and social bookmarking to support transparency in a university course. In the course, groups of students used weblogs and social bookmarking in their work. The objective of the case was to empower students...... by providing them with tools that would be visible to the other students in the course, thus, making students’ ideas, thoughts and questions visible to the other students in the course. The paper concludes that use of digital media for transparency can support empowerment of students and inspiration among...... students in a course, but that the challenge is to create a balance between personal tools and tools for collaborative group work that are also suitable for transparency between students....

  12. Silicon oxynitrides of KCC-1, SBA-15 and MCM-41 for CO 2 capture with excellent stability and regenerability

    KAUST Repository

    Patil, Umesh; Fihri, Aziz; Emwas, Abdul-Hamid M.; Polshettiwar, Vivek

    2012-01-01

    ammonia gas, and they demonstrated excellent CO 2 capture capabilities. These materials overcome several limitations of conventional amine-grafted mesoporous silica. They offer good CO 2 capture capacity, faster adsorption-desorption kinetics, efficient

  13. Synthesis of a Novel Polyethoxysilsesquiazane and Thermal Conversion into Ternary Silicon Oxynitride Ceramics with Enhanced Thermal Stability.

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Daiko, Yusuke; Honda, Sawao; Iwamoto, Yuji

    2017-12-05

    A novel polyethoxysilsesquiazane ([EtOSi(NH) 1.5 ] n , EtOSZ) was synthesized by ammonolysis at -78 °C of ethoxytrichlorosilane (EtOSiCl₃), which was isolated by distillation as a reaction product of SiCl₄ and EtOH. Attenuated total reflection-infra red (ATR-IR), 13 C-, and 29 Si-nuclear magnetic resonance (NMR) spectroscopic analyses of the ammonolysis product resulted in the detection of Si-NH-Si linkage and EtO group. The simultaneous thermogravimetric and mass spectrometry analyses of the EtOSZ under helium revealed cleavage of oxygen-carbon bond of the EtO group to evolve ethylene as a main gaseous species formed in-situ, which lead to the formation at 800 °C of quaternary amorphous Si-C-N with an extremely low carbon content (1.1 wt %) when compared to the theoretical EtOSZ (25.1 wt %). Subsequent heat treatment up to 1400 °C in N₂ lead to the formation of X-ray amorphous ternary Si-O-N. Further heating to 1600 °C in N₂ promoted crystallization and phase partitioning to afford Si₂N₂O nanocrystallites identified by the XRD and TEM analyses. The thermal stability up to 1400 °C of the amorphous state achieved for the ternary Si-O-N was further studied by chemical composition analysis, as well as X-ray photoelectron spectroscopy (XPS) and 29 Si-NMR spectroscopic analyses, and the results were discussed aiming to develop a novel polymeric precursor for ternary amorphous Si-O-N ceramics with an enhanced thermal stability.

  14. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic voluntar......It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic...

  15. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  16. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  17. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Directory of Open Access Journals (Sweden)

    Kae Dal Kwack

    2011-01-01

    Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  18. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  19. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

  20. The Causes of Fiscal Transparency

    DEFF Research Database (Denmark)

    Alt, James E.; Lassen, David Dreyer; Rose, Shanna

    We use unique panel data on the evolution of transparent budget procedures in the American states over the past three decades to explore the political and economic determinants of fiscal transparency. Our case studies and quantitative analysis suggest that both politics and fiscal policy outcomes...... influence the level of transparency. More equal political competition and power sharing are associated with both greater levels of fiscal transparency and increases in fiscal transparency during the sample period. Political polarization and past fiscal conditions, in particular state government debt...... and budget imbalance, also appear to affect the level of transparency...

  1. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  2. Solar selective performance of metal nitride/oxynitride based magnetron sputtered thin film coatings: a comprehensive review

    Science.gov (United States)

    Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao

    2018-03-01

    Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.

  3. Transparency and imaginary colors

    NARCIS (Netherlands)

    Richards, W.; Koenderink, J.J.; Van Doorn, A.

    2009-01-01

    Unlike the Metelli monochrome transparencies, when overlays and their backgrounds have chromatic content, the inferred surface colors may not always be physically realizable, and are in some sense “imaginary.” In these cases, the inferred chromatic transmittance or reflectance of the overlay lies

  4. Complicating Methodological Transparency

    Science.gov (United States)

    Bridges-Rhoads, Sarah; Van Cleave, Jessica; Hughes, Hilary E.

    2016-01-01

    A historical indicator of the quality, validity, and rigor of qualitative research has been the documentation and disclosure of the behind-the-scenes work of the researcher. In this paper, we use what we call "methodological data" as a tool to complicate the possibility and desirability of such transparency. Specifically, we draw on our…

  5. Transparency for international trade

    Science.gov (United States)

    K. R. Lakin; G. A. Fowler; W. D. Bailey; J. Cavey; P. Lehtonen

    2003-01-01

    U.S. Department of Agriculture - Animal and Plant Health Inspection Service - Plant Protection and Quarantine (USDA-APHIS-PPQ) has developed a Regulated Plant Pest List (RPPL). This provides trading partners with an official list of plant pests of concern to the U.S., along with providing greater transparency of Agency actions.

  6. The Mediated Transparent Society

    DEFF Research Database (Denmark)

    Backer, Lise

    2001-01-01

    in the mediated transparent society. The paper concludes that, based on these analyses, the mediated panopticism working on the business segment is not an effective disciplinary apparatus, which can guarantee that business corporations are carrying out important ecological or ethical improvements....

  7. Remote Monitoring Transparency Program

    International Nuclear Information System (INIS)

    Sukhoruchkin, V.K.; Shmelev, V.M.; Roumiantsev, A.N.

    1996-01-01

    The objective of the Remote Monitoring Transparency Program is to evaluate and demonstrate the use of remote monitoring technologies to advance nonproliferation and transparency efforts that are currently being developed by Russia and the United States without compromising the national security to the participating parties. Under a lab-to-lab transparency contract between Sandia National Laboratories (SNL) and the Kurchatov Institute (KI RRC), the Kurchatov Institute will analyze technical and procedural aspects of the application of remote monitoring as a transparency measure to monitor inventories of direct- use HEU and plutonium (e.g., material recovered from dismantled nuclear weapons). A goal of this program is to assist a broad range of political and technical experts in learning more about remote monitoring technologies that could be used to implement nonproliferation, arms control, and other security and confidence building measures. Specifically, this program will: (1) begin integrating Russian technologies into remote monitoring systems; (2) develop remote monitoring procedures that will assist in the application of remote monitoring techniques to monitor inventories of HEU and Pu from dismantled nuclear weapons; and (3) conduct a workshop to review remote monitoring fundamentals, demonstrate an integrated US/Russian remote monitoring system, and discuss the impacts that remote monitoring will have on the national security of participating countries

  8. Application of first-principles methods for the calculation of the crystal and electronic structure of oxynitrides

    Energy Technology Data Exchange (ETDEWEB)

    Fang, C.M.; Metselaar, R.; Hintzen, H.T.; With, G. de [Eindhoven Univ. of Technology (Netherlands). Lab. of Solid State and Materials Chemistry

    2002-07-01

    Theoretical simulations using density functional theory (DFT) within ab initio total-energy and molecular-dynamics method have been performed for several oxynitride materials. Examples dealt with are compounds in the Ta-O-N, Si-O-N and Al-O-N systems. Random or partially ordered distributions of the oxygen and nitrogen ions as well as other structural defects can be predicted very well by these methods. Local structure relaxation and its influence on the electronic properties are addressed. (orig.)

  9. Transparent SiON/Ag/SiON multilayer passivation grown on a flexible polyethersulfone substrate using a continuous roll-to-roll sputtering system

    Science.gov (United States)

    2012-01-01

    We have investigated the characteristics of a silicon oxynitride/silver/silicon oxynitride [SiON/Ag/SiON] multilayer passivation grown using a specially designed roll-to-roll [R2R] sputtering system on a flexible polyethersulfone substrate. Optical, structural, and surface properties of the R2R grown SiON/Ag/SiON multilayer were investigated as a function of the SiON thickness at a constant Ag thickness of 12 nm. The flexible SiON/Ag/SiON multilayer has a high optical transmittance of 87.7% at optimized conditions due to the antireflection and surface plasmon effects in the oxide-metal-oxide structure. The water vapor transmission rate of the SiON/Ag/SiON multilayer is 0.031 g/m2 day at an optimized SiON thickness of 110 nm. This indicates that R2R grown SiON/Ag/SiON is a promising thin-film passivation for flexible organic light-emitting diodes and flexible organic photovoltaics due to its simple and low-temperature process. PMID:22221400

  10. File: nuclear safety and transparency

    International Nuclear Information System (INIS)

    Martinez, J.P.; Etchegoyen, A.; Jeandron, C.

    2001-01-01

    Several experiences of nuclear safety and transparency are related in this file. Public information, access to documents, transparency in nuclear regulation are such subjects developed in this debate. (N.C.)

  11. Transparent Armor Cost Benefit Study

    National Research Council Canada - National Science Library

    Prokurat Franks, Lisa; Holm, David; Barnak, Rick

    2006-01-01

    ...; the increase in demand for transparent gun shields in Operation Iraqi Freedom (OIF) and early versions of jerry-rigged shields used in OIF, including Pope glass and Transparent Armored Gun Shields (TAGS...

  12. Development of tantalum oxynitride thin films produced by PVD: Study of structural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Materials Science, Transylvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transylvania University, 500036 Brasov (Romania); Barradas, N.P.; Alves, E. [Instituto Superior Técnico, Universidade Técnica de Lisboa Estrada Nacional 10, ao km 139,7 2695-066, Bobadela LRS (Portugal); Moura, C.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2013-11-15

    The purpose of this work is to study the evolution of the structure and of the thermal stability of a group of tantalum oxynitride thin films, prepared by magnetron sputtering, under the influence of vacuum annealing, up to a temperature of 800 °C. When varying the partial pressure of the reactive gases (P{sub O{sub 2+N{sub 2}}}), during the deposition process, the films change from a structure with a combination of poorly developed crystallites of the tetragonal β-Ta and of the face centred cubic (fcc) Ta(O,N) phases, for the films deposited with low P{sub O2+N2}, to a quasi-amorphous structure, for the films deposited with highest pressures. For intermediate pressures, the films reveal the presence of the fcc-Ta(O,N) structure. This structure corresponds to O atoms substituting some of the N atoms on the fcc-TaN structure and/or N atoms substituting O atoms of the fcc-γ-TaO structure. When subjected to the thermal annealing at 700 °C or higher, the film produced with lowest partial pressure revealed a remarkable structural change. New diffraction peaks appear and can only be attributed to a sub-stoichiometric hexagonal tantalum nitride structure. The film did not reveal any signs of delamination or cracks after all annealing temperatures. The two films produced with highest partial pressure proved to be the most stable. Structurally, they maintain the amorphous structure after all the annealing treatments and, in addition, no cracks or delamination were detected.

  13. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, M.-C. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China); Chang, L.-S. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China)], E-mail: lschang@dragon.nchu.edu.tw; Lin, H.C. [Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, 106 Taipei, Taiwan (China)

    2008-03-30

    Titanium oxynitride (TiN{sub x}O{sub y}) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN{sub x}O{sub y} films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm{sup 2} to 7 W/cm{sup 2}. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN{sub x}O{sub y} films deposited at power densities above 4 W/cm{sup 2} show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN{sub x}O{sub y} films reach values as low as 0.98 g/m{sup 2}-day-atm and 0.60 cm{sup 3}/m{sup 2}-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al{sub 2}O{sub 3} barrier films. Therefore, TiN{sub x}O{sub y} films are potential candidates to be used as a gas permeation barrier for PET substrate.

  14. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  15. Certificate Transparency with Privacy

    Directory of Open Access Journals (Sweden)

    Eskandarian Saba

    2017-10-01

    Full Text Available Certificate transparency (CT is an elegant mechanism designed to detect when a certificate authority (CA has issued a certificate incorrectly. Many CAs now support CT and it is being actively deployed in browsers. However, a number of privacy-related challenges remain. In this paper we propose practical solutions to two issues. First, we develop a mechanism that enables web browsers to audit a CT log without violating user privacy. Second, we extend CT to support non-public subdomains.

  16. Transparent conducting oxide nanotubes

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

    2014-09-01

    Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

  17. Transparency -- Some observations

    International Nuclear Information System (INIS)

    Houck, F.

    1994-01-01

    The increasingly popular term transparency has been used throughout the IAEA Safeguards Symposium to mean many things to many people. It has rather little utility as a catch-all term or buzz word. A precise definition of transparency is in order. In this paper, transparency is the provision to the IAEA of additional information for which the IAEA has an identified use and includes any associated increased IAEA access to sue the information. In 1993, the IAEA Board endorsed very specific proposals for provision to the IAEA of additional information on international nuclear transfers. It also made specific decisions on verification in the context of tis earlier confirmation of the very sweeping access rights for special inspections outlined by the director general. Additional information to the IAEA has two potential practical uses. First, it could help identify inconsistencies within the entirety of the information available to the IAEA, including information from inspections. These inconsistencies could be an indication of some violation of safeguards undertakings. Second, a declaration of the Member State could facilitate IAEA interpretation of analyses of other information or facilitate resolution of ambiguities. In these respects, additional information is not different from currently used information. When considering seeking specific additional information, the IAEA must balance the potential contribution of the information and its expected costs

  18. Optical, electrical and mechanical properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering

    International Nuclear Information System (INIS)

    Le Dreo, H.; Banakh, O.; Keppner, H.; Steinmann, P.-A.; Briand, D.; Rooij, N.F. de

    2006-01-01

    Thin films of tantalum oxynitride were prepared by reactive magnetron sputtering using a Ta target and N 2 and O 2 as reactive gases. The nitrogen flow was kept constant while the oxygen flow was pulsed periodically. The film composition evolves progressively from TaO 0.25 N 1.51 to TaO 2.42 N 0.25 while increasing the oxygen pulse duty cycle without any abrupt change in the elemental content. The optical transmission spectra of the films deposited on glass show a 'blue shift' of the absorption edge with increasing oxygen content. X-ray diffraction (XRD) patterns of all films exhibit broad peaks typical for nanocrystalline materials. Cross-section film morphology is rather featureless and surface topography is smooth exhibiting very small grains, in agreement with the results obtained by XRD. The optical properties of the films are very sensitive to their chemical composition. All films exhibit semiconducting behaviour with an optical band gap changing from 1.85 to 4.0 eV with increasing oxygen content. In order to evaluate the potential of the tantalum oxynitride films for microelectronic applications some Ta-O-N films were integrated in a MOS structure. The results of the capacitance-voltage measurements of the system Al//Ta-O-N//p-Si are discussed with respect to the chemical composition of the Ta-O-N films

  19. 76 FR 1180 - FDA Transparency Initiative: Improving Transparency to Regulated Industry

    Science.gov (United States)

    2011-01-07

    ...] FDA Transparency Initiative: Improving Transparency to Regulated Industry AGENCY: Food and Drug... the Transparency Initiative, the Food and Drug Administration (FDA) is announcing the availability of a report entitled ``FDA Transparency Initiative: Improving Transparency to Regulated Industry.'' The...

  20. Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

    Science.gov (United States)

    Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

    1978-01-01

    Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

  1. Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N sup + and O sup + Co-implantation

    CERN Document Server

    Lin Qing; Xie Xin Yun; Lin Chenglu; Liu Xiang Hua

    2002-01-01

    A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N sup + and O sup + co-implantation in silicon wafers at a constant temperature of 550 degree C. The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, the authors study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O sup + and N sup + co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program

  2. Graphene-based transparent electrodes for hybrid solar cells

    Directory of Open Access Journals (Sweden)

    Pengfei eLi

    2014-11-01

    Full Text Available The graphene-based transparent and conductive films were demonstrated to be cost-effective electrodes working in organic-inorganic hybrid Schottky solar cells. Large area graphene films were produced by chemical vapor deposition (CVD on copper foils and transferred onto glass as transparent electrodes. The hybrid solar cell devices consist of solution processed poly (3, 4-ethlenedioxythiophene: poly (styrenesulfonate (PEDOT: PSS which is sandwiched between silicon wafer and graphene electrode. The solar cells based on graphene electrodes, especially those doped with HNO3, has comparable performance to the reference devices using commercial indium tin oxide (ITO. Our work suggests that graphene-based transparent electrode is a promising candidate to replace ITO.

  3. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  4. Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D.; Pătru, M.; Crisan, A.; Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crăciun, D. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Moura, C. [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Cunha, L., E-mail: lcunha@fisica.uminho.pt [Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-15

    Highlights: • Structural evolution from β-Ta, to fcc-Ta(O,N), to amorphous Ta{sub 2}O{sub 5} with increasing P(N{sub 2} + O{sub 2}). • The substrate bias influences the N content, but does not influence the O content of the films. • The structural features of the films appear at lower P(N{sub 2} + O{sub 2}) when produced with grounded substrate. - Abstract: Tantalum oxynitride thin films were produced by magnetron sputtering. The films were deposited using a pure Ta target and a working atmosphere with a constant N{sub 2}/O{sub 2} ratio. The choice of this constant ratio limits the study concerning the influence of each reactive gas, but allows a deeper understanding of the aspects related to the affinity of Ta to the non-metallic elements and it is economically advantageous. This work begins by analysing the data obtained directly from the film deposition stage, followed by the analysis of the morphology, composition and structure. For a better understanding regarding the influence of the deposition parameters, the analyses are presented by using the following criterion: the films were divided into two sets, one of them produced with grounded substrate holder and the other with a polarization of −50 V. Each one of these sets was produced with different partial pressure of the reactive gases P(N{sub 2} + O{sub 2}). All the films exhibited a O/N ratio higher than the N/O ratio in the deposition chamber atmosphere. In the case of the films produced with grounded substrate holder, a strong increase of the O content is observed, associated to the strong decrease of the N content, when P(N{sub 2} + O{sub 2}) is higher than 0.13 Pa. The higher Ta affinity for O strongly influences the structural evolution of the films. Grazing incidence X-ray diffraction showed that the lower partial pressure films were crystalline, while X-ray reflectivity studies found out that the density of the films depended on the deposition conditions: the higher the gas pressure, the

  5. Perceptual transparency from image deformation.

    Science.gov (United States)

    Kawabe, Takahiro; Maruya, Kazushi; Nishida, Shin'ya

    2015-08-18

    Human vision has a remarkable ability to perceive two layers at the same retinal locations, a transparent layer in front of a background surface. Critical image cues to perceptual transparency, studied extensively in the past, are changes in luminance or color that could be caused by light absorptions and reflections by the front layer, but such image changes may not be clearly visible when the front layer consists of a pure transparent material such as water. Our daily experiences with transparent materials of this kind suggest that an alternative potential cue of visual transparency is image deformations of a background pattern caused by light refraction. Although previous studies have indicated that these image deformations, at least static ones, play little role in perceptual transparency, here we show that dynamic image deformations of the background pattern, which could be produced by light refraction on a moving liquid's surface, can produce a vivid impression of a transparent liquid layer without the aid of any other visual cues as to the presence of a transparent layer. Furthermore, a transparent liquid layer perceptually emerges even from a randomly generated dynamic image deformation as long as it is similar to real liquid deformations in its spatiotemporal frequency profile. Our findings indicate that the brain can perceptually infer the presence of "invisible" transparent liquids by analyzing the spatiotemporal structure of dynamic image deformation, for which it uses a relatively simple computation that does not require high-level knowledge about the detailed physics of liquid deformation.

  6. Transparent ultraviolet photovoltaic cells.

    Science.gov (United States)

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  7. Towards energy transparent factories

    CERN Document Server

    Posselt, Gerrit

    2016-01-01

    This monograph provides a methodological approach for establishing demand-oriented levels of energy transparency of factories. The author presents a systematic indication of energy drivers and cost factors, taking into account the interdependencies between facility and production domains. Particular attention is given to energy flow metering and monitoring. Readers will also be provided with an in-depth description of a planning tool which allows for systematically deriving suitable metering points in complex factory environments. The target audience primarily comprises researchers and experts in the field of factory planning, but the book may also be beneficial for graduate students.

  8. Illusionary Transparency? Oil Revenues, Information Disclosure, and Transparency

    OpenAIRE

    Ofori, Jerome Jeffison; Lujala, Päivi

    2015-01-01

    xperience shows that discovery of valuable natural resources can become a curse rather than a blessing, and transparency has been identified as key to better resource governance because it can limit opportunities for corruption and mismanagement. This article shows that information disclosure, in which many governments and donor institutions engage, does not automatically translate into transparency. Ghana has embedded transparency as one of its key principles in oil management. However, fiel...

  9. The transparency trap.

    Science.gov (United States)

    Bernstein, Ethan

    2014-10-01

    To promote accountability, productivity, and shared learning, many organizations create open work environments and gather reams of data on how individuals spend their time. A few years ago, HBS professor Ethan Bernstein set out to find empirical evidence that such approaches improve organizational performance. What he discovered is that this kind of transparency often has an unintended consequence: It can leave employees feeling vulnerable and exposed. When that happens, they conceal any conduct that deviates from the norm so that they won't have to explain it. Unrehearsed, experimental behaviors sometimes stop altogether. But Bernstein also discovered organizations that had established zones of privacy within open environments by setting four types of boundaries: around teams, between feedback and evaluation, between decision rights and improvement rights, and around periods of experimentation. Moreover, across several studies, the companies that had done all this were the ones that consistently got the most creative, efficient, and thoughtful work from their employees. Bernstein's conclusion? By balancing transparency and privacy, organizations can capture the benefits of both, and encourage just the right amount of "positive deviance" needed to increase innovation and productivity.

  10. Corneal structure and transparency

    Science.gov (United States)

    Meek, Keith M.; Knupp, Carlo

    2015-01-01

    The corneal stroma plays several pivotal roles within the eye. Optically, it is the main refracting lens and thus has to combine almost perfect transmission of visible light with precise shape, in order to focus incoming light. Furthermore, mechanically it has to be extremely tough to protect the inner contents of the eye. These functions are governed by its structure at all hierarchical levels. The basic principles of corneal structure and transparency have been known for some time, but in recent years X-ray scattering and other methods have revealed that the details of this structure are far more complex than previously thought and that the intricacy of the arrangement of the collagenous lamellae provides the shape and the mechanical properties of the tissue. At the molecular level, modern technologies and theoretical modelling have started to explain exactly how the collagen fibrils are arranged within the stromal lamellae and how proteoglycans maintain this ultrastructure. In this review we describe the current state of knowledge about the three-dimensional stromal architecture at the microscopic level, and about the control mechanisms at the nanoscopic level that lead to optical transparency. PMID:26145225

  11. Lattice Transparency of Graphene.

    Science.gov (United States)

    Chae, Sieun; Jang, Seunghun; Choi, Won Jin; Kim, Youn Sang; Chang, Hyunju; Lee, Tae Il; Lee, Jeong-O

    2017-03-08

    Here, we demonstrated the transparency of graphene to the atomic arrangement of a substrate surface, i.e., the "lattice transparency" of graphene, by using hydrothermally grown ZnO nanorods as a model system. The growth behaviors of ZnO nanocrystals on graphene-coated and uncoated substrates with various crystal structures were investigated. The atomic arrangements of the nucleating ZnO nanocrystals exhibited a close match with those of the respective substrates despite the substrates being bound to the other side of the graphene. By using first-principles calculations based on density functional theory, we confirmed the energetic favorability of the nucleating phase following the atomic arrangement of the substrate even with the graphene layer present in between. In addition to transmitting information about the atomic lattice of the substrate, graphene also protected its surface. This dual role enabled the hydrothermal growth of ZnO nanorods on a Cu substrate, which otherwise dissolved in the reaction conditions when graphene was absent.

  12. Flexible transparent electrode

    Science.gov (United States)

    Demiryont, Hulya; Shannon, Kenneth C., III; Moorehead, David; Bratcher, Matthew

    2011-06-01

    This paper presents the properties of the EclipseTECTM transparent conductor. EclipseTECTM is a room temperature deposited nanostructured thin film coating system comprised of metal-oxide semiconductor elements. The system possesses metal-like conductivity and glass-like transparency in the visible region. These highly conductive TEC films exhibit high shielding efficiency (35dB at 1 to 100GHz). EclipseTECTM can be deposited on rigid or flexible substrates. For example, EclipseTECTM deposited on polyethylene terephthalate (PET) is extremely flexible that can be rolled around a 9mm diameter cylinder with little or no reduction in electrical conductivity and that can assume pre-extension states after an applied stress is relieved. The TEC is colorless and has been tailored to have high visible transmittance which matches the eye sensitivity curve and allows the viewing of true background colors through the coating. EclipseTECTM is flexible, durable and can be tailored at the interface for applications such as electron- or hole-injecting OLED electrodes as well as electrodes in flexible displays. Tunable work function and optical design flexibility also make EclipseTECTM well-suited as a candidate for grid electrode replacement in next-generation photovoltaic cells.

  13. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Department of Chemistry, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgy Engineering and Inorganic Chemistry, International Campus of Excellence of the Sea - CEI-MAR, University of Cadiz, Avda. República Saharaui s/n, 11510 Puerto Real, Cádiz (Spain); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Faculty of Engineering, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia)

    2015-02-01

    Highlights: • New ZrO{sub x}N{sub y} films were deposited on stainless steel 316L using PSY-N and UBMS. • ZrO{sub x}N{sub y} rhombohedral polycrystalline film grew with PSY-N. • Zr{sub 2}ON{sub 2} crystalline structures, mostly oriented along the (2 2 2) plane, grew with UBMS. • Layers improved corrosion behavior in NaCl media, especially those deposited by UBMS. - Abstract: ZrO{sub x}N{sub y}/ZrO{sub 2} thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO{sub 2} was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrO{sub x}N{sub y} rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr{sub 2}ON{sub 2} crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride

  14. Positron annihilation in transparent ceramics

    Science.gov (United States)

    Husband, P.; Bartošová, I.; Slugeň, V.; Selim, F. A.

    2016-01-01

    Transparent ceramics are emerging as excellent candidates for many photonic applications including laser, scintillation and illumination. However achieving perfect transparency is essential in these applications and requires high technology processing and complete understanding for the ceramic microstructure and its effect on the optical properties. Positron annihilation spectroscopy (PAS) is the perfect tool to study porosity and defects. It has been applied to investigate many ceramic structures; and transparent ceramics field may be greatly advanced by applying PAS. In this work positron lifetime (PLT) measurements were carried out in parallel with optical studies on yttrium aluminum garnet transparent ceramics in order to gain an understanding for their structure at the atomic level and its effect on the transparency and light scattering. The study confirmed that PAS can provide useful information on their microstructure and guide the technology of manufacturing and advancing transparent ceramics.

  15. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  16. Positron annihilation in transparent ceramics

    International Nuclear Information System (INIS)

    Husband, P; Selim, F A; Bartošová, I; Slugeň, V

    2016-01-01

    Transparent ceramics are emerging as excellent candidates for many photonic applications including laser, scintillation and illumination. However achieving perfect transparency is essential in these applications and requires high technology processing and complete understanding for the ceramic microstructure and its effect on the optical properties. Positron annihilation spectroscopy (PAS) is the perfect tool to study porosity and defects. It has been applied to investigate many ceramic structures; and transparent ceramics field may be greatly advanced by applying PAS. In this work positron lifetime (PLT) measurements were carried out in parallel with optical studies on yttrium aluminum garnet transparent ceramics in order to gain an understanding for their structure at the atomic level and its effect on the transparency and light scattering. The study confirmed that PAS can provide useful information on their microstructure and guide the technology of manufacturing and advancing transparent ceramics. (paper)

  17. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

    2017-01-01

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  18. Budget transparency in local governments

    OpenAIRE

    Giménez Perona, Paloma

    2014-01-01

    Treball Final de Grau en Finances i Comptabilitat. Codi: FC1049. Curs acadèmic 2013-2014 This work will study the socio-demographic determinants, political, budgetary and economic, that affect the transparency of local entities. To perform the study, we have chosen the transparency index data for the 110 largest municipalities of Spain, in 2012 has been chosen from the information offered by the website of the organization Transparency International Spain. The results indica...

  19. Aircraft Lighting and Transparency Lab

    Data.gov (United States)

    Federal Laboratory Consortium — The Advanced Lighting and Transparencies with Night Combat Lab performs radiometric and photometric measurements of cockpit lighting and displays. Evaluates the day,...

  20. Transparent lithium-ion batteries

    KAUST Repository

    Yang, Y.

    2011-07-25

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh/L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries.

  1. High Temperature Transparent Furnace Development

    Science.gov (United States)

    Bates, Stephen C.

    1997-01-01

    This report describes the use of novel techniques for heat containment that could be used to build a high temperature transparent furnace. The primary objective of the work was to experimentally demonstrate transparent furnace operation at 1200 C. Secondary objectives were to understand furnace operation and furnace component specification to enable the design and construction of a low power prototype furnace for delivery to NASA in a follow-up project. The basic approach of the research was to couple high temperature component design with simple concept demonstration experiments that modify a commercially available transparent furnace rated at lower temperature. A detailed energy balance of the operating transparent furnace was performed, calculating heat losses through the furnace components as a result of conduction, radiation, and convection. The transparent furnace shells and furnace components were redesigned to permit furnace operation at at least 1200 C. Techniques were developed that are expected to lead to significantly improved heat containment compared with current transparent furnaces. The design of a thermal profile in a multizone high temperature transparent furnace design was also addressed. Experiments were performed to verify the energy balance analysis, to demonstrate some of the major furnace improvement techniques developed, and to demonstrate the overall feasibility of a high temperature transparent furnace. The important objective of the research was achieved: to demonstrate the feasibility of operating a transparent furnace at 1200 C.

  2. Transparent lithium-ion batteries

    Science.gov (United States)

    Yang, Yuan; Jeong, Sangmoo; Hu, Liangbing; Wu, Hui; Lee, Seok Woo; Cui, Yi

    2011-01-01

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh/L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries. PMID:21788483

  3. Canadian perspectives in evaluating transparency

    International Nuclear Information System (INIS)

    Herwig, L.

    2007-01-01

    The Canadian Nuclear Safety Commission's mission is to regulate the use of nuclear energy and materials to protect the health, safety, and security of Canadians and the environment, as well as to respect Canada's international commitments on the peaceful use of nuclear energy. In 2001, the CNSC established a vision to be one of the best nuclear regulators in the world and established four strategic priorities of effectiveness, transparency, excellence in staff, and efficiency. While fulfilling a very comprehensive mandate, the CNSC operates with a. very clear vision of its clientele - the Canadian people. That commitment guides every employee and every action of the CNSC and ensures a firm commitment to transparency. The presentation will begin with a brief overview of the worldwide context of transparency and transparency measurement, with a look at what lessons can be learned from other organizations and initiatives. It will look broadly at the Canadian context and the government framework that establishes transparency, including the keystone legislation of the Access to Information Act. The presentation will then focus on the Canadian Nuclear Safety Commission. The CNSC is firmly committed to putting additional measures in place to ensure transparency, which is being done concurrently with an overall organisational performance measurement system. It is within this framework that the presentation will address the transparency efforts at the CNSC as well transparency measurement activities. And, finally, the presentation will look at future directions for transparency and its measurement at the CNSC. (author)

  4. Transparency through the Internet

    Energy Technology Data Exchange (ETDEWEB)

    Haginoya, Tohru [Inst. of Nuclear Materials Management, Japan Chapter, Tokyo (Japan)

    1998-07-01

    Many countries, especially developed countries have their 'Home Pages' and disclose their activities openly including nuclear activities. These information give, to some extent, the transparency of countries. The annual report of the IAEA can be found in its home page, reports describe its safeguards activities including facilities under its safeguards together with the status of 'subsidiary arrangements'. The Atomic Energy White Papers of the STA home pages show its nuclear activities and nuclear material. Details of safeguards related information are obtained by analyzing these home pages and find some information inconsistent each other. In connection with Strengthened Safeguards system' , non-nuclear items such as zirconium, heavy water or their manufacturing organizations which are subject to the safeguards system would be retrieved by using 'search engines' through the internet. (author)

  5. Transparency through the Internet

    International Nuclear Information System (INIS)

    Haginoya, Tohru

    1998-01-01

    Many countries, especially developed countries have their 'Home Pages' and disclose their activities openly including nuclear activities. These information give, to some extent, the transparency of countries. The annual report of the IAEA can be found in its home page, reports describe its safeguards activities including facilities under its safeguards together with the status of 'subsidiary arrangements'. The Atomic Energy White Papers of the STA home pages show its nuclear activities and nuclear material. Details of safeguards related information are obtained by analyzing these home pages and find some information inconsistent each other. In connection with Strengthened Safeguards system' , non-nuclear items such as zirconium, heavy water or their manufacturing organizations which are subject to the safeguards system would be retrieved by using 'search engines' through the internet. (author)

  6. Transparency and control

    International Nuclear Information System (INIS)

    2001-01-01

    After having outlined some lessons learnt after the Chernobyl accident, notably the facts that risk assessment and management were not separated, that radioactivity measurements have suffered from a lack of means and of preparedness, and that there has been few information exchanged between the different concerned countries, this document presents the four international conventions which have been negotiated after this accident (they concern the notification, assistance, safety, safety of fuel management and of radioactive wastes). It discusses the lessons learnt in France, the credibility of information and the confidence in authorities, the evolution of transparency and information in France and in the rest of the World, the transposition of the Arhus Convention in the communautary and national law, the innovating European approaches, and the evolutions in France

  7. Room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride induced by milling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Bolokang, Amogelang S., E-mail: Sylvester.Bolokang@transnet.net [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark, 0127 (South Africa); Tshabalala, Zamaswazi P. [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Malgas, Gerald F. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535 (South Africa); Kortidis, Ioannis [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); West Virginia University, Department of Mechanical & Aerospace Engineering, Evansdale Campus, Morgantown, WV, 26506 (United States); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300 (South Africa); Motaung, David E., E-mail: dmotaung@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa)

    2017-06-01

    We report on the room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride prepared by milling and annealing at 1100 °C in a nitrogen gas environment. Structural analyses revealed a metastable orthorhombic TiO{sub 2} phase after milling for 120 h. The 120 h milled TiO{sub 2} particles and subsequently annealed in nitrogen gas at 1100 °C showed the formation of titanium oxynitride (TiO{sub x}N{sub y}) with a tetragonal crystal structure. An FCC metastable TiO{sub x}N{sub y} phase was also observed with a lattice parameter a = 4.235 Å. The vibrating sample magnetometer and electron paramagnetic analyses showed that the milled and TiO{sub x}N{sub y} samples possess room temperature ferromagnetism. Gas sensing measurements were carried out toward CH{sub 4} and H{sub 2} gases. The TiO{sub x}N{sub y} nanostructures demonstrated higher sensing response and selectivity to CH{sub 4} gas at room temperature. The enhanced response of 1010 and sensitivity of 50.12 ppm{sup -1} at a concentration of 20 ppm CH{sub 4} are associated with higher surface area, pore diameter and surface defects such as oxygen vacancies and Ti{sup 3+}, as evidenced from the Brunauer–Emmet–Teller, photoluminescence, electron paramagnetic resonance and x-ray photoelectron analyses. - Highlights: • Ball milled of TiO{sub 2} structure revealed metastable orthorhombic phase. • Upon nitridation tetragonal and FCC TiO{sub x}N{sub y} crystal structures were induced. • The magnetic properties of TiO{sub 2} nanoparticles was transformed by milling. • TiO{sub x}N{sub y} sensing response for CH{sub 4} gas at room temperature was high.

  8. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  9. Nanocellulose reinforcement of Transparent Composites

    Science.gov (United States)

    Joshua Steele; Hong Dong; James F. Snyder; Josh A. Orlicki; Richard S. Reiner; Alan W. Rudie

    2012-01-01

    In this work, we evaluate the impact of nanocellulose reinforcement on transparent composite properties. Due to the small diameter, high modulus, and high strength of cellulose nanocrystals, transparent composites that utilize these materials should show improvement in bulk mechanical performances without a corresponding reduction in optical properties. In this study...

  10. Student Perceptions of Teaching Transparency

    Science.gov (United States)

    Anderson, Alecia D.; Hunt, Andrea N.; Powell, Rachel E.; Dollar, Cindy Brooks

    2013-01-01

    The authors discuss the relationship between teaching transparency and active learning through the perspectives of their students. Active learning directly engages students in the learning process while transparency involves the instructor's divulgence of logic regarding course organization and activity choices. After utilizing these teaching…

  11. Transparency as an ethical safeguard

    NARCIS (Netherlands)

    Spagnolli, Anna; Frank, Lily E.; Haselager, Pim; Kirsh, David; Ham, Jaap; Spagnolli, Anna; Blankertz, Benjamin; Gamberini, Luciano; Jacucci, Giulio

    2018-01-01

    Transparency seems to represent a solution to many ethic issues generated by systems that collect implicit data from users to model the user themselves based on programmed criteria. However, making such systems transparent -- besides being a major technical challenge - risks raising more issues than

  12. Robot transparency, trust and utility

    Science.gov (United States)

    Wortham, Robert H.; Theodorou, Andreas

    2017-07-01

    As robot reasoning becomes more complex, debugging becomes increasingly hard based solely on observable behaviour, even for robot designers and technical specialists. Similarly, non-specialist users have difficulty creating useful mental models of robot reasoning from observations of robot behaviour. The EPSRC Principles of Robotics mandate that our artefacts should be transparent, but what does this mean in practice, and how does transparency affect both trust and utility? We investigate this relationship in the literature and find it to be complex, particularly in nonindustrial environments where, depending on the application and purpose of the robot, transparency may have a wider range of effects on trust and utility. We outline our programme of research to support our assertion that it is nevertheless possible to create transparent agents that are emotionally engaging despite having a transparent machine nature.

  13. Phenomenal transparency in achromatic checkerboards.

    Science.gov (United States)

    Masin, S C

    1999-04-01

    The study explored the luminance relations that determine the occurrence of achromatic transparency in phenomenal surfaces on complex backgrounds. Let the luminances of the left and right parts of a transparent surface on a bipartite background and those of the left and right parts of the bipartite background be p and q and m and n, respectively. Metelli proposed that this surface looks transparent when the rule p q if m > n) is satisfied, and Masin and Fukuda that it looks transparent when the inclusion rule is satisfied, that is, when p epsilon (m, q) or q epsilon (p, n). These rules also apply to achromatic checkerboards formed by one checkerboard enclosed in another checkerboard. This study shows that only the inclusion rule correctly predicted the occurrence of transparency in these checkerboards.

  14. Modulated surface textures for enhanced scattering in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.; Battaglia, C.; Ballif, C.; Zeman, M.

    2012-01-01

    Nano-scale randomly textured front transparent oxides are superposed on micro-scale etched glass substrates to form modulated surface textures. The resulting enhanced light scattering is implemented in single and double junction thin-film silicon solar cells.

  15. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

    2016-05-28

    AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

  16. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  17. Selectively reflective transparent sheets

    Science.gov (United States)

    Waché, Rémi; Florescu, Marian; Sweeney, Stephen J.; Clowes, Steven K.

    2015-08-01

    We investigate the possibility to selectively reflect certain wavelengths while maintaining the optical properties on other spectral ranges. This is of particular interest for transparent materials, which for specific applications may require high reflectivity at pre-determined frequencies. Although there exist currently techniques such as coatings to produce selective reflection, this work focuses on new approaches for mass production of polyethylene sheets which incorporate either additives or surface patterning for selective reflection between 8 to 13 μ m. Typical additives used to produce a greenhouse effect in plastics include particles such as clays, silica or hydroxide materials. However, the absorption of thermal radiation is less efficient than the decrease of emissivity as it can be compared with the inclusion of Lambertian materials. Photonic band gap engineering by the periodic structuring of metamaterials is known in nature for producing the vivid bright colors in certain organisms via strong wavelength-selective reflection. Research to artificially engineer such structures has mainly focused on wavelengths in the visible and near infrared. However few studies to date have been carried out to investigate the properties of metastructures in the mid infrared range even though the patterning of microstructure is easier to achieve. We present preliminary results on the diffuse reflectivity using FDTD simulations and analyze the technical feasibility of these approaches.

  18. Nuclear deterrence: which environmental transparency?

    International Nuclear Information System (INIS)

    Cherief, Hamza

    2012-01-01

    This article addresses the field of nuclear geopolitics. The author discusses the tensions between the principle of transparency regarding environmental issues on the one hand, and the protection of nuclear deterrence as instrument of power on the other hand. According to the French law, the preservation of nuclear power instruments means the acknowledgement of a legal regime which is specific to national defence requirements in terms of secret and right to information. Thus, the author discusses the constitutional limitations of the environmental transparency obligation for the protection of Nation's fundamental interests. Then, by commenting the Rainbow Warrior affair, the author highlights the exceptional limitations of the transparency requirement regarding nuclear issues

  19. Transparency masters for mathematics revealed

    CERN Document Server

    Berman, Elizabeth

    1980-01-01

    Transparency Masters for Mathematics Revealed focuses on master diagrams that can be used for transparencies for an overhead projector or duplicator masters for worksheets. The book offers information on a compilation of master diagrams prepared by John R. Stafford, Jr., audiovisual supervisor at the University of Missouri at Kansas City. Some of the transparencies are designed to be shown horizontally. The initial three masters are number lines and grids that can be used in a mathematics course, while the others are adaptations of text figures which are slightly altered in some instances. The

  20. Silicon fabric for multi-functional applications

    KAUST Repository

    Sevilla, Galo T.; Rojas, Jhonathan Prieto; Ahmed, Sally; Hussain, Aftab M.; Inayat, Salman Bin; Hussain, Muhammad Mustafa

    2013-01-01

    This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

  1. Silicon fabric for multi-functional applications

    KAUST Repository

    Sevilla, Galo T.

    2013-06-01

    This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

  2. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  3. Silicon-based metallic micro grid for electron field emission

    International Nuclear Information System (INIS)

    Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

    2012-01-01

    A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

  4. Strengthening Transparency in Regulatory Science

    Science.gov (United States)

    Where available and appropriate, EPA will use peer-reviewed information, standardized test methods, consistent data evaluation procedures, and good laboratory practices to ensure transparent, understandable, and reproducible scientific assessments.

  5. Transparency in Cooperative Online Education

    DEFF Research Database (Denmark)

    Dalsgaard, Christian; Paulsen, Morten Flate

    2009-01-01

    The purpose of this article is to discuss the following question: What is the potential of social networking within cooperative online education? Social networking does not necessarily involve communication, dialogue, or collaboration. Instead, the authors argue that transparency is a unique...... feature of social networking services. Transparency gives students insight into each other’s actions. Cooperative learning seeks to develop virtual learning environments that allow students to have optimal individual freedom within online learning communities. This article demonstrates how cooperative...... learning can be supported by transparency. To illustrate this with current examples, the article presents NKI Distance Education’s surveys and experiences with cooperative learning. The article discusses by which means social networking and transparency may be utilized within cooperative online education...

  6. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

    2017-01-01

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

  7. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  8. Development of a Novel Transparent Flexible Capacitive Micromachined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    Da-Chen Pang

    2017-06-01

    Full Text Available This paper presents the world’s first transparent flexible capacitive micromachined ultrasonic transducer (CMUT that was fabricated through a roll-lamination technique. This polymer-based CMUT has advantages of transparency, flexibility, and non-contacting detection which provide unique functions in display panel applications. Comprising an indium tin oxide-polyethylene terephthalate (ITO-PET substrate, SU-8 sidewall and vibrating membranes, and silver nanowire transparent electrode, the transducer has visible-light transmittance exceeding 80% and can operate on curved surfaces with a 40 mm radius of curvature. Unlike the traditional silicon-based high temperature process, the CMUT can be fabricated on a flexible substrate at a temperature below 100 °C to reduce residual stress introduced at high temperature. The CMUT on the curved surfaces can detect a flat target and finger at distances up to 50 mm and 40 mm, respectively. The transparent flexible CMUT provides a better human-machine interface than existing touch panels because it can be integrated with a display panel for non-contacting control in a health conscious environment and the flexible feature is critical for curved display and wearable electronics.

  9. Lines that induce phenomenal transparency.

    Science.gov (United States)

    Grieco, Alba; Roncato, Sergio

    2005-01-01

    Three neighbouring opaque surfaces may appear split into two layers, one transparent and one opaque beneath, if an outline contour is drawn that encompasses two of them. The phenomenon was originally observed by Kanizsa [1955 Rivista di Psicologia 69 3-19; 1979 Organization in Vision: Essays on Gestalt Psychology (New York: Praeger)], for the case where an outline contour is drawn to encompass one of the two parts of a bicoloured figure and a portion of a background of lightest (or darkest) luminance. Preliminary observations revealed that the outline contour yields different effects: in addition to the stratification into layers described by Kanizsa, a second split, opposite in depth order, may occur when the outline contour is close in luminance to one of the three surfaces. An initial experiment was designed to investigate what conditions give rise to the two phenomenal transparencies: this led to the conclusion that an outline contour superimposed on an opaque surface causes this surface to emerge as a transparent layer when the luminances of the contour and the surface differ, in absolute value, by no more than 13.2 cd m(-2). We have named this phenomenon 'transparency of the intercepted surface', to distinguish it from the phenomenal transparency arising when the contour and surface are very different in luminance. When such a difference exists, the contour acts as a factor of surface definition and grouping: the portion of the homogeneous surface it bounds emerges as a fourth surface and groups with a nearby surface if there is one close in luminance. The transparency phenomena ('transparency of the contoured surface') perceived in this context conform to the constraints of Metelli's model, as demonstrated by a second experiment, designed to gather 'opacity' ratings of stimuli. The observer judgments conformed to the values predicted by Metelli's formula for perceived degree of transparency, alpha. The role of the outline contour in conveying figural and

  10. Transparent Substrates for Plasmonic Sensing by Lithography-Free Fabrication

    DEFF Research Database (Denmark)

    Thilsted, Anil Haraksingh

    This Ph.D. thesis presents fabrication and optimization of transparent plasmonic substrates that can be used for biological and chemical sensing by surface enhanced Raman spectroscopy (SERS) sensing and localized surface plasmon resonance refractive index (LSPR RI) sensing. These substrates are......-free fabrication methods, and resulted in large-area, high throughput and low cost production techniques. The fabrication techniques consisted of using aluminum patterned areas and reactive ion etching (RIE) to achieve nanopillars or nanocylinders in glass; using RIE to achieve nanopillars in silicon as a mould......, respectively. As the substrates were transparent, measurements from the backside were possible, showing a 44%, 1:7% and 71% Raman signal intensity in comparison to the measurements from the front, for the glass nanopillars, the polymer injected nanopillars and the transferred metal nanocaps, respectively...

  11. A Concise Dictionary of Transparency

    Directory of Open Access Journals (Sweden)

    Jakub Misun

    2013-01-01

    Full Text Available The article discusses an essay collection by Marek Bieńczyk, Przeźroczystość [Transparency]. The concept, placed in various context, shows various aspects and is seen in various shades. The author does not put forward a statement, but rather proposes a work to be done: to determine the modality of transparency. The concept initially seems to be mainly epistemological: the cognizant subject would like to make the world transparent, to discover all possible mysteries. Before that, however, the subject must know itself, and here the dream of trans­parency also plays the key role. Lack of epistemological transparency is the main cause of melancholy and its reverse — hysteria. The concept turns out to be important in the domain of love — the loer thinks that (she knows the desired person more better anybody else, that (she has entirely penetrated the subjectivity of the Other. Ultimately, however, the dream of transparency goes down to a slow demise of the subject: as self-discovery progresses, there is less and less of the discoverer. In conclusion of this work, the border of modality of the concept turns out to be horrifyingly obvious. The desire for transparency consequently searches not for knowledge, but for an escape whose name is death.

  12. Lignin-Retaining Transparent Wood.

    Science.gov (United States)

    Li, Yuanyuan; Fu, Qiliang; Rojas, Ramiro; Yan, Min; Lawoko, Martin; Berglund, Lars

    2017-09-11

    Optically transparent wood, combining optical and mechanical performance, is an emerging new material for light-transmitting structures in buildings with the aim of reducing energy consumption. One of the main obstacles for transparent wood fabrication is delignification, where around 30 wt % of wood tissue is removed to reduce light absorption and refractive index mismatch. This step is time consuming and not environmentally benign. Moreover, lignin removal weakens the wood structure, limiting the fabrication of large structures. A green and industrially feasible method has now been developed to prepare transparent wood. Up to 80 wt % of lignin is preserved, leading to a stronger wood template compared to the delignified alternative. After polymer infiltration, a high-lignin-content transparent wood with transmittance of 83 %, haze of 75 %, thermal conductivity of 0.23 W mK -1 , and work-tofracture of 1.2 MJ m -3 (a magnitude higher than glass) was obtained. This transparent wood preparation method is efficient and applicable to various wood species. The transparent wood obtained shows potential for application in energy-saving buildings. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  13. Titanium oxynitride thin films as high-capacity and high-rate anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Hsia, Chen-Hsien

    2015-01-01

    Titanium oxynitride (TiO_xN_y) was synthesized by reactive magnetron sputtering in a mixed N_2/O_2/Ar gas at ambient temperature. TiO_xN_y thin films with various amounts of nitrogen contents were deposited by varying the N_2/O_2 ratios in the background gas. The synthesized TiO_xN_y films with different compositions (TiO_1_._8_3_7N_0_._0_6_0_, TiO_1_._8_9_0N_0_._0_6_8_, TiO_1_._8_6_5N_0_._0_7_3, and TiO_1_._8_8_2N_0_._1_6_3) all displayed anatase phase, except TiO_1_._8_8_2N_0_._1_6_3. The impedances and grain sizes showed obvious variations with the nitrogen contents. A wide potential window from 3.0 V to 0.05 V, high-rate charge–discharge testing, and long cycle testing were applied to investigate the performances of synthesized TiO_xN_y and pure TiO_2 as anodes for lithium-ion batteries. These TiO_xN_y anodes can be cycled under high rates of 125 μA/cm"2 (10 °C) because of the lower charge–transfer resistance compared with the TiO_2 anode. At 10 °C the discharge capacity of the optimal TiO_xN_y composition is 1.5 times higher than that of pure TiO_2. An unexpectedly large reversible capacity of ~ 300 μAh/cm"2 μm (~ 800 mAh/g) between 1.0 V and 0.05 V was recorded for the TiO_xN_y anodes. The TiO_xN_y anode was cycled (3.0 V to 0.05 V) at 10 °C over 300 times without capacity fading while delivering a capacity of ~ 150 μAh/cm"2 μm (~ 400 mAh/g). - Highlights: • Titanium oxynitride (TiO_xN_y) thin films as anode materials were studied. • TiO_xN_y thin films with various amounts of nitrogen contents were studied_. • High rate capability of TiO_xN_y was studied.

  14. Electromagnetically Induced Transparency in Symmetric Planar Metamaterial at THz Wavelengths

    Directory of Open Access Journals (Sweden)

    Abdelwaheb Ourir

    2015-03-01

    Full Text Available We report the experimental observation and the evidence of the analogue of electromagnetically-induced transparency (EIT in a symmetric planar metamaterial. This effect has been obtained in the THz range thanks to a destructive Fano-interference between the two first modes of an array of multi-gap split ring resonators deposited on a silicon substrate. This structure is a planar thin film material with four-fold symmetry. Thanks to this property, a polarization-independent transmission has been achieved. The proposed metamaterial is well adapted to variety of slow-light applications in the infrared and optical range.

  15. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  16. Fabrication and Characterization of Transparent Piezoresistors Using Carbon Nanotube Film

    International Nuclear Information System (INIS)

    Lee, Kang Won; Lee, Seung Seob; Lee, Jung A; Lee, Kwang Cheol

    2010-01-01

    We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65.92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process

  17. Interaction between social influence and payoff transparency.

    Science.gov (United States)

    Zhou, Xinyue; Xie, Wenwen; Ye, Maolin

    2014-02-01

    Social influence and payoff transparency interact with each other to influence decision making. Social influence masks payoff transparency, and lacking transparency drives people to seek social influence. Moreover, our survey supports our claim by showing that social influence and payoff transparency correlate with each other (r(53) = -.71). Bentley et al.'s model can be revised to accommodate the covariance.

  18. Young's modulus and fracture toughness of silicon nitride ceramics at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Rouxel, T. [Rennes Univ. (France). Lab. de Recherche en Mecanique Applicee

    2002-07-01

    The temperature dependencies of Young's modulus (E) and fracture toughness (K{sub 1c}) of several silicon nitride-based monolithic and composite materials, are reviewed. A transition range is observed between 1130 and 1180 C on the E(T) curves, which is systematically 150 to 200 C above the T{sub g} of oxynitride glasses of composition close to that of the intergranular glassy pockets. It is thus supposed that this transition reflects the behaviour of the interfacial glassy films. The higher the glassy phase content, the higher is the temperature sensitivity. The presence of SiC particles greatly attenuates the sensitivity. Thus, Young's modulus decreases more slowly with temperature and fracture toughness changes little up to 1300 C. The K{sub 1c} (T) curves exhibit four different stages which are discussed and interpreted on the basis of a theoretical model. (orig.)

  19. Tunable multiple plasmon induced transparencies in parallel graphene sheets and its applications

    Science.gov (United States)

    khazaee, Sara; Granpayeh, Nosrat

    2018-01-01

    Tunable plasmon induced transparency is achieved by using only two parallel graphene sheets beyond silicon diffractive grating in mid-infrared region. Excitation of the guided-wave resonance (GWR) in this structure is illustrated on the normal incident transmission spectra and plays the bright resonance mode role. Weak hybridization between two bright modes, creates plasmon induced transparency (PIT) optical response. The resonance frequency of transparency window can be tuned by different geometrical parameters. Also, variation of graphene Fermi energy can be used to achieve tunability of the resonance frequency of transparency window without reconstruction and re-fabrication of the structure. We demonstrate the existence of multiple PIT spectral responses resulting from a series of self-assembled GWRs to be used as the wavelength demultiplexer. This study can be used for design of the optical ultra-compact devices and photonic integrated circuits.

  20. Plasmon-Induced Transparency Based on Triple Arc-Ring Resonators

    Directory of Open Access Journals (Sweden)

    Guang-Xi Dong

    2018-06-01

    Full Text Available This paper presents a plasmon-induced transparency (PIT using an easy-fabricating metamaterial composed of three pieces of metallic arc-rings on top of a dielectric substrate. The transmission of the transparent peak of 1.32 THz reaches approximately 93%. The utilization of the coupled Lorentzian oscillator model and the distribution of electromagnetic fields together explain the cause of the transparent peak. The simulation results further demonstrate that the bandwidth of the transmission peak can be narrowed by changing the sizes of the arc-rings. Moreover, an on/off effect based on the transparent peak is discussed by introducing photosensitive silicon into the air gaps of the suggested metamaterial structure.

  1. Tunable optical analog to electromagnetically induced transparency in graphene-ring resonators system.

    Science.gov (United States)

    Wang, Yonghua; Xue, Chenyang; Zhang, Zengxing; Zheng, Hua; Zhang, Wendong; Yan, Shubin

    2016-12-12

    The analogue of electromagnetically induced transparency in optical ways has shown great potential in optical delay and quantum-information technology due to its flexible design and easy implementation. The chief drawback for these devices is the bad tunability. Here we demonstrate a tunable optical transparency system formed by graphene-silicon microrings which could control the transparent window by electro-optical means. The device consists of cascaded coupled ring resonators and a graphene/graphene capacitor which integrated on one of the rings. By tuning the Fermi level of the graphene sheets, we can modulate the round-trip ring loss so that the transparency window can be dynamically tuned. The results provide a new method for the manipulation and transmission of light in highly integrated optical circuits and quantum information storage devices.

  2. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    Science.gov (United States)

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-01-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

  3. Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

    International Nuclear Information System (INIS)

    Jiang, Nanke; Georgiev, Daniel G.; Wen, Ting; Jayatissa, Ahalapitiya H.

    2012-01-01

    Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N 2 –Ar or N 2 –Ar–O 2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn-N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of ∼ 10 19 cm −3 , mobility of ∼ 10 1 cm 2 /Vs, resistivity of ∼ 10 −2 Ω ∗ cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap.

  4. Laser gas assisted texturing and formation of nitride and oxynitride compounds on alumina surface: Surface response to environmental dust

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.; Al-Sharafi, A.; Al-Aqeeli, N.

    2018-03-01

    Laser gas assisted texturing of alumina surface is carried out, and formation of nitride and oxynitride compounds in the surface vicinity is examined. The laser parameters are selected to create the surface topology consisting of micro/nano pillars with minimum defect sites including micro-cracks, voids and large size cavities. Morphological and hydrophobic characteristics of the textured surface are examined using the analytical tools. The characteristics of the environmental dust and its influence on the laser textured surface are studied while mimicking the local humid air ambient. Adhesion of the dry mud on the laser textured surface is assessed through the measurement of the tangential force, which is required to remove the dry mud from the surface. It is found that laser texturing gives rise to micro/nano pillars topology and the formation of AlN and AlON compounds in the surface vicinity. This, in turn, lowers the free energy of the textured surface and enhances the hydrophobicity of the surface. The liquid solution resulted from the dissolution of alkaline and alkaline earth metals of the dust particles in water condensate forms locally scattered liquid islands at the interface of mud and textured surface. The dried liquid solution at the interface increases the dry mud adhesion on the textured surface. Some dry mud residues remain on the textured surface after the dry mud is removed by a pressurized desalinated water jet.

  5. Photoluminescence, energy transfer and tunable color of Ce(3+), Tb(3+) and Eu(2+) activated oxynitride phosphors with high brightness.

    Science.gov (United States)

    Lü, Wei; Huo, Jiansheng; Feng, Yang; Zhao, Shuang; You, Hongpeng

    2016-06-21

    New tuneable light-emitting Ca3Al8Si4O17N4:Ce(3+)/Tb(3+)/Eu(2+) oxynitride phosphors with high brightness have been prepared. When doped with trivalent cerium or divalent europium they present blue luminescence under UV excitation. The energy transfer from Ce(3+) to Tb(3+) and Ce(3+) to Eu(2+) ions is deduced from the spectral overlap between Ce(3+) emission and Tb(3+)/Eu(2+) excitation spectra. The energy-transfer efficiencies and corresponding mechanisms are discussed in detail, and the mechanisms of energy transfer from the Ce(3+) to Tb(3+) and Ce(3+) to Eu(2+) ions are demonstrated to be a dipole-quadrupole and dipole-dipole mechanism, respectively, by the Inokuti-Hirayama model. The International Commission on Illumination value of color tuneable emission as well as luminescence quantum yield (23.8-80.6%) can be tuned by controlling the content of Ce(3+), Tb(3+) and Eu(2+). All results suggest that they are suitable for UV light-emitting diode excitation.

  6. Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

    Science.gov (United States)

    Faruque, Faisal

    The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

  7. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.

    2017-03-14

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  8. Issues in Canadian board transparency

    Directory of Open Access Journals (Sweden)

    Chris Bart

    2007-01-01

    Full Text Available Transparency is considered one of the principles of good corporate governance. But what does it mean – in practice – especially when it comes to Board transparency – i.e. the ability of shareholders to gain knowledge about an organization’s corporate governance practices in order to make an informed assessment of Directors’ individual and collective roles and performance. In a preliminary investigation of Board transparency practices in Canadian listed firms (using data from 2003-2004, it was found that there were wide variations in the nature and quantity of corporate governance practices disclosed. The reasons for these variations are discussed and a number of recommendations for improved disclosure are presented.

  9. Transparency of nuclear regulatory activities

    International Nuclear Information System (INIS)

    2007-01-01

    One of the main missions of nuclear regulators is to protect the public, and this cannot be completely achieved without public confidence. The more a regulatory process is transparent, the more such confidence will grow. Despite important cultural differences across countries, a number of common features characterise media and public expectations regarding any activity with an associated risk. A common understanding of transparency and main stakeholders' expectations in the field of nuclear safety were identified during this workshop, together with a number of conditions and practices aimed at improving the transparency of nuclear regulatory activities. These conditions and practices are described herein, and will be of particular interest to all those working in the nuclear regulatory field. Their implementation may, however, differ from one country to another depending on national context. (authors)

  10. Transparent conductors based on microscale/nanoscale materials for high performance devices

    Science.gov (United States)

    Gao, Tongchuan

    Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short

  11. Does doxastic transparency support evidentialism?

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2008-01-01

    Nishi Shah has recently argued that transparency in doxastic deliberation supports a strict version of evidentialism about epistemic reasons. I argue that Shah’s argument relies on a principle that is incompatible the strict version of evidentialism Shah wishes to advocate.......Nishi Shah has recently argued that transparency in doxastic deliberation supports a strict version of evidentialism about epistemic reasons. I argue that Shah’s argument relies on a principle that is incompatible the strict version of evidentialism Shah wishes to advocate....

  12. Color transparency: Enchantment and effort

    International Nuclear Information System (INIS)

    Miller, G.A.

    1991-01-01

    A quantum mechanical approach is used to study high momentum transfer reactions in which a nucleon is knocked out of the nucleus. We show that the nuclear interactions of the wave packet produced in such a process tend to cancel, so that the nuclear medium becomes transparent. The wave packet (ejectile)-nucleon interactions, including the production of nucleon resonances are also discussed. Color transparency effects in the (e,e'p) reaction may be significant at relatively low momentum transfer Q 2 = 3 - 6 (GeV 2 /c) 2 . 17 refs., 3 figs

  13. A FRAMEWORK FOR TRANSPARENCY IN INTERNATIONAL TRADE

    Directory of Open Access Journals (Sweden)

    Bernal Turnes, Paloma

    2015-01-01

    Full Text Available The aim of this paper is to cover the gap in literature about transparency in the context of international trade facilitation. It focuses on the importance of transparency in achieving growth in international trade and the differences between non-transparent practices and corruption in global trade. Managing the disclosure of information about rules, regulations and laws is not the only trade policy instrument where transparency becomes important. To build a framework on levels of transparency we developed a matrix classifying the transparency of each country based on ease of doing business and levels of bribery. Four different strategies are explained based on the different scenarios of transparency in international trade. The main conclusions reflect that disclosure of information is not enough to guarantee transparency and monitoring of transparency must be improved.

  14. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

    International Nuclear Information System (INIS)

    Wong, Yew Hoong; Cheong, Kuan Yew

    2012-01-01

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N 2 O ambient (10–100%) at 500 °C for 15 min to form Zr-oxynitride on 4H–SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N 2 O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr–O–N and/or Zr–N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: ► Zr-oxynitride as the gate oxide deposited on 4H–SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H–SiC using various concentrations of N 2 O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N. ► The highest electrical breakdown and highest reliability at diluted N 2 O of 10%.

  15. Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

    International Nuclear Information System (INIS)

    Takahashi, Jumpei; Oka, Daichi; Hirose, Yasushi; Yang, Chang; Fukumura, Tomoteru; Hasegawa, Tetsuya; Nakao, Shoichiro; Harayama, Isao; Sekiba, Daiichiro

    2015-01-01

    Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoO x N y ) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoO x N y thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoO x N y thin films monotonically decreased from the order of 10 5  Ω cm to 10 −4  Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoO x N y phase, which has not yet been reported in Co 2+ /Co 3+ mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoO x N y phase, on the 10 −3  Ω cm order, may have originated from the intermediate spin state of Co 3+ stabilized by the lowered crystal field symmetry of the CoO 6−n N n octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoO x N y films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides

  16. The Design, Fabrication and Characterization of a Transparent Atom Chip

    Directory of Open Access Journals (Sweden)

    Ho-Chiao Chuang

    2014-06-01

    Full Text Available This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.

  17. The Design, Fabrication and Characterization of a Transparent Atom Chip

    Science.gov (United States)

    Chuang, Ho-Chiao; Huang, Chia-Shiuan; Chen, Hung-Pin; Huang, Chi-Sheng; Lin, Yu-Hsin

    2014-01-01

    This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments. PMID:24922456

  18. Long-lasting antifog plasma modification of transparent plastics.

    Science.gov (United States)

    Di Mundo, Rosa; d'Agostino, Riccardo; Palumbo, Fabio

    2014-10-08

    Antifog surfaces are necessary for any application requiring optical efficiency of transparent materials. Surface modification methods aimed toward increasing solid surface energy, even when supposed to be permanent, in fact result in a nondurable effect due to the instability in air of highly hydrophilic surfaces. We propose the strategy of combining a hydrophilic chemistry with a nanotextured topography, to tailor a long-lasting antifog modification on commercial transparent plastics. In particular, we investigated a two-step process consisting of self-masked plasma etching followed by plasma deposition of a silicon-based film. We show that the deposition of the silicon-based coatings on the flat (pristine) substrates allows a continuous variation of wettability from hydrophobic to superhydrophilic, due to a continuous reduction of carbon-containing groups, as assessed by Fourier transform infrared and X-ray photoelectron spectroscopies. By depositing these different coatings on previously nanotextured substrates, the surface wettability behavior is changed consistently, as well as the condensation phenomenon in terms of microdroplets/liquid film appearance. This variation is correlated with advancing and receding water contact angle features of the surfaces. More importantly, in the case of the superhydrophilic coating, though its surface energy decreases with time, when a nanotextured surface underlies it, the wetting behavior is maintained durably superhydrophilic, thus durably antifog.

  19. Controlling the flow of light with silicon nanostructures

    International Nuclear Information System (INIS)

    Park, W

    2010-01-01

    Silicon is an important material for integrated photonics applications. High refractive index and transparency in the infrared region makes it an ideal platform to implement nanostructures for novel optical devices. We fabricated silicon photonic crystals and experimentally demonstrated negative refraction and self-collimation. We also used heterodyne near-field scanning optical microscope to directly visualize the anomalous wavefronts. When the periodicity is much smaller than wavelength, silicon photonic crystal can be described by the effective medium theory. By engineering effective refractive index with silicon nanorod size, we demonstrated an all-dielectric cloak structure which can hide objects in front of a highly reflecting plane. The work discussed in this review shows the powerful design flexibility and versatility of silicon nanostructures

  20. Why is Transparency Greenland Necessary?

    DEFF Research Database (Denmark)

    Jensen, Boris Brorman

    2012-01-01

    Greenland is facing significant changes in the composition of its economy, and is moving rapidly in the direction of becoming a commodities economy. Studies conducted by Transparency International in other parts of the world suggest that oil exploration and mining are among the areas of economic...

  1. Transparency in Cooperative Online Education

    Science.gov (United States)

    Dalsgaard, Christian; Paulsen, Morten Flate

    2009-01-01

    The purpose of this article is to discuss the following question: What is the potential of social networking within cooperative online education? Social networking does not necessarily involve communication, dialogue, or collaboration. Instead, the authors argue that "transparency" is a unique feature of social networking services.…

  2. Camuflagem e transparência

    Directory of Open Access Journals (Sweden)

    Maria de Fátima de A. Silveira

    2000-06-01

    Full Text Available O ensaio estabelece, a partir da compreensão de ELIADE, analogias entre alguns símbolos universais e os rituais de morte desenvolvidos pela Enfermagem, desnudando a camuflagem ali existente e apontando sua transparência como forma de enriquecer a prática profissional, beneficiando cuidadora(es e sujeitos do cuidado.

  3. Camuflagem e transparência

    Directory of Open Access Journals (Sweden)

    Maria de Fátima de A. Silveira

    Full Text Available O ensaio estabelece, a partir da compreensão de ELIADE, analogias entre alguns símbolos universais e os rituais de morte desenvolvidos pela Enfermagem, desnudando a camuflagem ali existente e apontando sua transparência como forma de enriquecer a prática profissional, beneficiando cuidadora(es e sujeitos do cuidado.

  4. Legal framework to ensure transparency

    International Nuclear Information System (INIS)

    Treier, A.

    2007-01-01

    There is a national and an international trend towards administrative transparency. This trend has not stopped at. the Swiss border. Some cantons of Switzerland have already introduced the transparency principle at the cantonal level. At the federal level, the Swiss Confederation introduced on 1 July 2006 the new Federal 'Freedom of Information Act'. Also the Swiss Federal Nuclear Safety Inspectorate (I-ISK) falls under this rule. Before introduction of this law on transparency. most of the documents of Swiss federal Administration were treated as confidential. Access rights to official documents were granted only on certain conditions and in special cases. But there is a general interest, that the public should have the possibility to ask to look at the files of the administration. Since years, the administration had no longer been able to hide behind secretiveness. For instance, the introduction of Internet brought a lot of transparency. The administration had to explain what sort of job it is actually doing and how it is doing. Also, the media were and are increasing their research for information. In this context, the new law on transparency ('Freedom of Information Act') is rather an evolution than a revolution. The Freedom of Information Act guarantees the public access to official documents. Most of the documents of the Federal Administration are public. This access can be limited, differentiated or refused in certain cases. That means that the principle of proportionality between private interests and public transparency has to be applied. The real challenge for the authority is the trade off between the public's right to access information and the industrial legitimate efforts to protect industrial and trade secrets. In the nuclear field, the international principle of transparency has also become an important national principle for Switzerland and FISK. The Swiss Nuclear Energy Act says that 'The relevant authorities shall regularly inform the general

  5. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  6. Titanium oxynitride thin films as high-capacity and high-rate anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Kuo-Feng [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Su, Shih-Hsuan, E-mail: minimono42@gmail.com [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Leu, Hoang-Jyh [Master' s Program of Green Energy Science and Technology, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Hsia, Chen-Hsien [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China)

    2015-12-01

    Titanium oxynitride (TiO{sub x}N{sub y}) was synthesized by reactive magnetron sputtering in a mixed N{sub 2}/O{sub 2}/Ar gas at ambient temperature. TiO{sub x}N{sub y} thin films with various amounts of nitrogen contents were deposited by varying the N{sub 2}/O{sub 2} ratios in the background gas. The synthesized TiO{sub x}N{sub y} films with different compositions (TiO{sub 1.837}N{sub 0.060,} TiO{sub 1.890}N{sub 0.068,} TiO{sub 1.865}N{sub 0.073}, and TiO{sub 1.882}N{sub 0.163}) all displayed anatase phase, except TiO{sub 1.882}N{sub 0.163}. The impedances and grain sizes showed obvious variations with the nitrogen contents. A wide potential window from 3.0 V to 0.05 V, high-rate charge–discharge testing, and long cycle testing were applied to investigate the performances of synthesized TiO{sub x}N{sub y} and pure TiO{sub 2} as anodes for lithium-ion batteries. These TiO{sub x}N{sub y} anodes can be cycled under high rates of 125 μA/cm{sup 2} (10 °C) because of the lower charge–transfer resistance compared with the TiO{sub 2} anode. At 10 °C the discharge capacity of the optimal TiO{sub x}N{sub y} composition is 1.5 times higher than that of pure TiO{sub 2}. An unexpectedly large reversible capacity of ~ 300 μAh/cm{sup 2} μm (~ 800 mAh/g) between 1.0 V and 0.05 V was recorded for the TiO{sub x}N{sub y} anodes. The TiO{sub x}N{sub y} anode was cycled (3.0 V to 0.05 V) at 10 °C over 300 times without capacity fading while delivering a capacity of ~ 150 μAh/cm{sup 2} μm (~ 400 mAh/g). - Highlights: • Titanium oxynitride (TiO{sub x}N{sub y}) thin films as anode materials were studied. • TiO{sub x}N{sub y} thin films with various amounts of nitrogen contents were studied{sub .} • High rate capability of TiO{sub x}N{sub y} was studied.

  7. Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

    Energy Technology Data Exchange (ETDEWEB)

    Khan, I.A.; Hassan, M.; Hussain, T. [Department of Physics, GC University, 54000 Lahore (Pakistan); Ahmad, R., E-mail: ahriaz@gmail.com [Department of Physics, GC University, 54000 Lahore (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Rawat, R.S. [National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

    2009-04-01

    Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al{sub 2}O{sub 3} whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains ({approx}35 nm). A smoother surface is observed for 20 Focus shots at 0 deg. angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 {+-} 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.

  8. Theoretical and Experimental Investigations into Novel Oxynitride Discovery in the GaN-TiO2 System at High Pressure

    Directory of Open Access Journals (Sweden)

    Alwin James

    2018-01-01

    Full Text Available We employed ab initio evolutionary algorithm USPEX to speed up the discovery of a novel oxynitride in the binary system of GaN-TiO2 using high-pressure synthesis. A 1:2 mixture of GaN and nanocrystalline TiO2 (anatase was reacted under 1 GPa of pressure and at 1200 °C in a piston cylinder apparatus to produce a mixture of TiO2 (rutile and an unknown phase. From the initial analysis of high resolution neutron and X-ray diffraction data, it is isomorphic with monoclinic V2GaO5 with a unit cell composition of Ga10Ti8O28N2 with the following parameters: monoclinic, space group C2/m, a = 17.823(1 Å, b = 2.9970(1 Å, c = 9.4205(5 Å, β = 98.446(3°; Volume = 497.74(3 Å3. Further, a joint rietveld refinement revealed two distinct regimes—A Ti-rich block and a Ga-rich block. The Ti-rich block consists of four edge-shared octahedra and contains a site which is about 60% occupied by N; this site is bonded to four Ti. The remainder of the block consists of edge linked Ti-octahedral chains linked to the TiN/TiO fragments at octahedral corners partially occupied by nitrogen. The Ga-block contains two symmetry independent octahedral sites, occupied mostly by Ga, and a pure Ga-centered tetrahedral site bonded mostly to oxygen.

  9. Broadband plasmon induced transparency in terahertz metamaterials

    KAUST Repository

    Zhu, Zhihua; Yang, Xu; Gu, Jianqiang; Jiang, Jun; Yue, Weisheng; Tian, Zhen; Tonouchi, Masayoshi; Han, Jiaguang; Zhang, Weili

    2013-01-01

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena

  10. Outside finance, dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    2000-01-01

    This paper studies optimal financial contracts and product market competition under a strategic transparency decision. When firms seeking outside finance resort to actively monitored debt in order to commit against opportunistic behaviour, the dominant lender can influence corporate transparency.

  11. Categories and Dimensions of Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    Transparency is a distinctive area of research across disciplines and presents significant importance for organization studies. However, transparency is rarely subject to structured and critical scrutiny and as a result its relevance for organizational analysis is underestimated. In an attempt...... to foreground the value of transparency studies, we offer an overview of the existing research and indicate two paradigmatic positions underpinning the transparency literature, namely what we term non-performative and performative approaches. The main contribution of the paper lies in this ground......, an approach which remains underexplored. Finally, we discuss some avenues for future studies of the organizing properties of transparency: the secrecy-transparency interplay, the power-transparency nexus and the transparency ‘family tree’ (i.e., intersections between multiple forms of disclosure)....

  12. Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

    Science.gov (United States)

    Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

    2017-08-01

    Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

  13. Second-order nonlinearity induced transparency.

    Science.gov (United States)

    Zhou, Y H; Zhang, S S; Shen, H Z; Yi, X X

    2017-04-01

    In analogy to electromagnetically induced transparency, optomechanically induced transparency was proposed recently in [Science330, 1520 (2010)SCIEAS0036-807510.1126/science.1195596]. In this Letter, we demonstrate another form of induced transparency enabled by second-order nonlinearity. A practical application of the second-order nonlinearity induced transparency is to measure the second-order nonlinear coefficient. Our scheme might find applications in quantum optics and quantum information processing.

  14. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  15. Playing the numbers game: Dealing with transparency

    NARCIS (Netherlands)

    Pachidi, S.; Huysman, M.H.; Berends, Hans; van de Weerd, G.C.

    2015-01-01

    Our research focus is on unpacking the performativity of transparency in order to explain how digital technologies, formerly perceived as enablers of surveillance and control, afford opaqueness as much as transparency. We develop a sociomaterial perspective on transparency and investigate how

  16. Organizational Transparency as Myth and Metaphor

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cornelissen, Joep

    2015-01-01

    Transparency has achieved a mythical status in society. Myths are not false accounts or understandings, but deep-seated and definitive descriptions of the world that ontologically ground the ways in which we frame and see the world around us. We explore the mythical nature of transparency from...... of the transparency myth....

  17. Transparency and Oversight in Local Wellness Policies

    Science.gov (United States)

    Chriqui, Jamie F.; Chaloupka, Frank J.

    2011-01-01

    Background: Advocates have called for increased wellness policy transparency and oversight through the use of health advisory councils. This study examines (1) wellness policy transparency, (2) advisory council requirements, (3) factors associated with each, and (4) whether transparency or advisory council requirements are indicative of a stronger…

  18. Transparency in port-Hamiltonian based telemanipulation

    NARCIS (Netherlands)

    Secchi, C; Stramigioli, Stefano; Fantuzzi, C.

    2005-01-01

    After stability, transparency is the major issue in the design of a telemanipulation system. In this paper we exploit a behavioral approach in order to provide an index for the evaluation of transparency in port-Hamiltonian based teleoperators. Furthermore we provide a transparency analysis of

  19. Transparency in Port-Hamiltonian-Based Telemanipulation

    NARCIS (Netherlands)

    Secchi, Cristian; Stramigioli, Stefano; Fantuzzi, Cesare

    After stability, transparency is the major issue in the design of a telemanipulation system. In this paper, we exploit the behavioral approach in order to provide an index for the evaluation of transparency in port-Hamiltonian-based teleoperators. Furthermore, we provide a transparency analysis of

  20. Pixel masks for screen-door transparency

    NARCIS (Netherlands)

    J.D. Mulder (Jurriaan); F.C.A. Groen; J.J. van Wijk (Jack)

    1998-01-01

    textabstractRendering objects transparently gives additional insight in complex and overlapping structures. However, traditional techniques for the rendering of transparent objects such as alpha blending are not very well suited for the rendering of multiple transparent objects in dynamic scenes.

  1. Does transparent government agencies strengthen trust?

    NARCIS (Netherlands)

    Grimmelikhuijsen, S.G.

    2009-01-01

    Trust in government has been shown to be volatile in recent years and Internet transparency is seen as a solution to strengthen trust. However, critics argue that transparency will only lead to less trust, and sceptics say that it has no effect at all. This debate on transparency is lacking

  2. Efficient outdoor performance of esthetic bifacial a-Si:H semi-transparent PV modules

    International Nuclear Information System (INIS)

    Myong, Seung Yeop; Jeon, Sang Won

    2016-01-01

    Highlights: • 1.43 m"2 a-Si:H semi-transparent PV modules with emotionally inoffensive and esthetically pleasing colors are developed. • Seasonal outdoor performance of the developed colorful PV modules is measured and simulated. • The bifacial TBC a-Si:H semi-transparent PV module performs at a superior annual electrical energy output. • An impressive performance ratio of 124.5% is achieved by surpassing a simulated prediction considerably. - Abstract: We developed bifacial transparent back contact (TBC) hydrogenated amorphous silicon (a-Si:H) semi-transparent glass-to-glass photovoltaic (PV) modules with emotionally inoffensive and esthetically pleasing colors have been developed by combining the transparent back contact and color of the back glass. Due to the high series resistance of the transparent back contact, the bifacial TBC a-Si:H semi-transparent PV modules had a lower rated power after light soaking than the monofacial opaque (metal) back contact (OBC) a-Si:H semi-transparent PV modules fabricated using the additional laser scribing patterns. However, the TBC a-Si:H semi-transparent PV module produced a higher annual electrical energy output than the OBC a-Si:H semi-transparent PV module thanks to bifacial power generation during the outdoor field test. In particular, the performance ratio of the TBC a-Si:H semi-transparent PV module measured at the optimal tilt angle of 30° surpassed its simulated prediction by a drastically high value of 124.5%. At a higher tilt angle of 85°, bifacial power generation produced a higher deviation between the measured and simulated annual performance of the TBC a-Si:H semi-transparent PV module. Since the reflected albedo has a tendency to increase toward higher tilt angles, bifacial power generation can compensate for the loss of lower direct plane-of-array irradiation at a higher tilt angle. Therefore, the TBC a-Si:H semi-transparent PV module is suitable for the vertically mounted building integrated

  3. Can We Build a Truly High Performance Computer Which is Flexible and Transparent?

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-09-10

    State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. Billions of transistors are integrated neatly using matured silicon fabrication process to maintain the performance per cost advantage. In that context, low-cost mono-crystalline bulk silicon (100) based high performance transistors are considered as the heart of today\\'s computers. One limitation is silicon\\'s rigidity and brittleness. Here we show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. We demonstrate high-k/metal gate stack based p-type metal oxide semiconductor field effect transistors on 4 inch silicon fabric released from bulk silicon (100) wafers with sub-threshold swing of 80 mV dec(-1) and on/off ratio of near 10(4) within 10% device uniformity with a minimum bending radius of 5 mm and an average transmittance of similar to 7% in the visible spectrum.

  4. Characterization of Nd{sub 2}AlO{sub 3}N and Sm{sub 2}AlO{sub 3}N oxynitrides synthesized by carbothermal reduction and nitridation

    Energy Technology Data Exchange (ETDEWEB)

    Chevire, Francois, E-mail: francois.chevire@univ-rennes1.fr [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , Equipe Verres et Ceramiques, Groupe Materiaux Azotes et Ceramiques, Universite de Rennes 1, 35042 Rennes Cedex (France); Pallu, Arthur; Ray, Erwan; Tessier, Franck [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , Equipe Verres et Ceramiques, Groupe Materiaux Azotes et Ceramiques, Universite de Rennes 1, 35042 Rennes Cedex (France)

    2011-05-12

    Research highlights: > Carbothermal reduction and nitridation leads to rare earth aluminum oxynitride starting from oxide mixture. > Absorption shifts towards visible in Nd{sub 2}AlO{sub 3}N (orange) and Sm{sub 2}AlO{sub 3}N (yellow). > Oxynitrides are stable up to 600 deg. C in air. > The so-called 'intermediate phase' phenomenon is evidenced in Sm{sub 2}AlO{sub 3}N. - Abstract: The Nd{sub 2}AlO{sub 3}N and Sm{sub 2}AlO{sub 3}N oxynitrides with the K{sub 2}NiF{sub 4}-type structure have been prepared from oxide mixture at 1250 deg. C using the carbothermal reduction and nitridation route (CRN). Optimization of the process is discussed to prevent surface oxidation of the oxynitrides during the synthesis. The absorption of Nd{sub 2}AlO{sub 3}N and Sm{sub 2}AlO{sub 3}N, orange and yellow respectively, has been characterized by diffuse reflectance as well as their thermal stability versus oxidation by thermogravimetric analyses.

  5. Target Advertising and Market Transparency

    OpenAIRE

    Stühmeier, Torben

    2012-01-01

    This paper examines the effects of increased transparency over online news sources, e.g. due to news aggregators, on online news outlets and the advertising industry. The role of news aggregators is controversially discussed, where the discussion widely points on user side effect. The present paper widens the discussion on the advertising side and shows that aggregators can help to better target advertising messages to a more homogenous group of users and, in turn, may both benefit advertiser...

  6. P -type transparent conducting oxides

    International Nuclear Information System (INIS)

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  7. When safety rhymes with transparency

    International Nuclear Information System (INIS)

    Champion, Marion; Larroque, Damien; Vandermersch, Marie

    2009-01-01

    The Transparency and Nuclear Safety Act, which took effect in 2006, requires each operator to document the measures taken to ensure nuclear safety and radiological protection and to list incidents and accidents as well as actions taken to protect the environment. This specifies the nature and limits of radioactive and non-radioactive releases, the quantity of waste to be stored at the facility, actions taken to limit waste volume, and effects on health and the environment, especially on soil and water. (authors)

  8. Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

    International Nuclear Information System (INIS)

    Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

    2016-01-01

    Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

  9. Transparent conductor based on aluminum nanomesh

    International Nuclear Information System (INIS)

    Kazarkin, B; Mohammed, A S; Stsiapanau, A; Zhuk, S; Satskevich, Y; Smirnov, A

    2014-01-01

    We report a transparent conductor based on Al nanomesh, which was fabricated through Al anodization and etching processes. The Al anodization was performed at low temperature condition to slow down the anodization rate to achieve the well-controlled thickness of an Al nanomesh. By careful controlling of the anodization process, we can fabricate Al nanomesh transparent conductors with different sheet resistance and optical transparency in the visible spectrum range. We shall show that Al nanomesh transparent conductor is a strong contender for a transparent conductor dominated by ITO

  10. Transparency in high-energy nuclear collisions

    International Nuclear Information System (INIS)

    Karol, P.J.

    1992-01-01

    Problems associated with transparency schemes based on sharp cutoff models are discussed. The soft spheres model of hadron-nucleus and nucleus-nucleus collisions has been used to explore the influence of the realistic nuclear density geometry on transparency. An average nuclear transparency and an average reaction transparency are defined and their dependence on target and projectile dimensions and on the hadron-nucleon collision cross section are described. The results are expected to be valid for projectile energies above several hundred MeV/nucleon through the ultrarelativistic regime. For uniform (hard sphere) nuclear profiles, methods for obtaining effective total transparencies are suggested

  11. Safety procedures used during the manufacturing of amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dickson, C R

    1987-01-01

    The Solarex Thin Film Division is a leader in the manufacturing of amorphous-silicon products for sale in domestic and foreign markets. Similarly, Solarex assumes a leadership role in recognizing the importance of safety in a manufacturing environment. Although many of the safety issues are similar to those in the semiconductor industry, this paper presents topics specific to amorphous silicon technology and the manufacturing ,f amorphous-silicon products. These topics are deposition of conducting transparent oxides (CTOs), amorphous silicon deposition, laser scribing, processing chemicals, fire prevention and administrative responsibilities.

  12. Synthesis and crystal structure of K{sub 2}NiF{sub 4}-type novel Gd{sub 1+x}Ca{sub 1−x}AlO{sub 4−x}N{sub x} oxynitrides

    Energy Technology Data Exchange (ETDEWEB)

    Masubuchi, Yuji, E-mail: yuji-mas@eng.hokudai.ac.jp; Hata, Tomoyuki; Motohashi, Teruki; Kikkawa, Shinichi

    2014-01-05

    Highlights: • Novel gadolinium calcium aluminum oxynitride was prepared by solid state reaction. • Crystal structure of the oxynitride was refined by using synchrotron X-ray diffraction. • Gd{sub 1.2}Ca{sub 0.8}AlO{sub 3.8}N{sub 0.2} has a layered K{sub 2}NiF{sub 4}-type structure with the I4mm space group. • Nitride ions preferentially occupy the apical site of aluminum octahedron. -- Abstract: Novel gadolinium calcium aluminum oxynitrides, Gd{sub 1+x}Ca{sub 1−x}AlO{sub 4−x}N{sub x}, were prepared in x = 0.15–0.25 by the solid state reaction of a nitrogen–rich mixture with AlN as an aluminum source; the mixture was sintered twice at 1500 °C for 5 h under 0.5 MPa of nitrogen gas. Shift in the optical absorption edge was observed in their diffuse reflectance spectra from 4.46 eV for the oxide (x = 0) to 2.94 eV for the oxynitride at x = 0.2. The crystal structure of Gd{sub 1.2}Ca{sub 0.8}AlO{sub 3.8}N{sub 0.2} at x = 0.2 was refined using a synchrotron X-ray diffraction data as a layered K{sub 2}NiF{sub 4}-type structure with the I4mm space group. Longer Al–O/N bond lengths in the oxynitride than those in GdCaAlO{sub 4} suggest that the nitride ions are in the apical site of aluminum polyhedron, similar to those in Nd{sub 2}AlO{sub 3}N.

  13. Exploring Quantitative Framework to Evaluate Nuclear Transparency

    International Nuclear Information System (INIS)

    Ha, Jeemin; Yim, Mansung; Park, Hyeon Seok

    2014-01-01

    In this work, a definition of nuclear transparency is elaborated and ways to represent a country's nuclear transparency are examined. For evaluating nuclear transparency, it is necessary to define three elements first; an information seeker who wants to see, an information seek whom an information seeker wants to see, and information related to nuclear materials and activities. The States with high capacity of civilian nuclear power had a tendency to follow IAEA safeguards agreements well. And it means that their levels of the transparency are relatively high. Besides, the data of international assurances is one of the good indicators to confirm States' transparency. The current study explored the use of two measures, IAEA safeguards and voluntary reporting as a way to represent nuclear transparency. Using these measures seemed to agree with the notion that nuclear transparency is important in the success of civilian nuclear power development

  14. Practice Variation in Big-4 Transparency Reports

    DEFF Research Database (Denmark)

    Girdhar, Sakshi; Klarskov Jeppesen, Kim

    2018-01-01

    Purpose: The purpose of this paper is to examine the transparency reports published by the Big-4 public accounting firms in the UK, Germany and Denmark to understand the determinants of their content within the networks of big accounting firms. Design/methodology/approach: The study draws...... on a qualitative research approach, in which the content of transparency reports is analyzed and semi-structured interviews are conducted with key people from the Big-4 firms who are responsible for developing the transparency reports. Findings: The findings show that the content of transparency reports...... is inconsistent and the transparency reporting practice is not uniform within the Big-4 networks. Differences were found in the way in which the transparency reporting practices are coordinated globally by the respective central governing bodies of the Big-4. The content of the transparency reports...

  15. A high performance transparent resistive switching memory made from ZrO_2/AlON bilayer structure

    International Nuclear Information System (INIS)

    Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen; Lou, Jesse Jen-Chung

    2016-01-01

    In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO_2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO_2/ITO single layer device, the ITO/ZrO_2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO_2/AlON interface. Therefore, in the ITO/ZrO_2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

  16. A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lou, Jesse Jen-Chung [Department of Energy Information Engineering, School of Software and Microelectronics, Peking University, Wuxi 214125 (China)

    2016-04-11

    In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

  17. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  18. Transparency as an element of public confidence

    International Nuclear Information System (INIS)

    Kim, H.K.

    2007-01-01

    In the modern society, there is increasing demands for greater transparency. It has been discussed with respect to corruption or ethics issues in social science. The need for greater openness and transparency in nuclear regulation is widely recognised as public expectations on regulator grow. It is also related to the digital and information technology that enables disclosures of every activity and information of individual and organisation, characterised by numerous 'small brothers'. Transparency has become a key word in this ubiquitous era. Transparency in regulatory activities needs to be understood in following contexts. First, transparency is one of elements to build public confidence in regulator and eventually to achieve regulatory goal of providing the public with satisfaction at nuclear safety. Transparent bases of competence, independence, ethics and integrity of working process of regulatory body would enhance public confidence. Second, activities transmitting information on nuclear safety and preparedness to be accessed are different types of transparency. Communication is an active method of transparency. With increasing use of web-sites, 'digital transparency' is also discussed as passive one. Transparency in regulatory process may be more important than that of contents. Simply providing more information is of little value and specific information may need to be protected for security reason. Third, transparency should be discussed in international, national and organizational perspectives. It has been demanded through international instruments. for each country, transparency is demanded by residents, public, NGOs, media and other stakeholders. Employees also demand more transparency in operating and regulatory organisations. Whistle-blower may appear unless they are satisfied. Fourth, pursuing transparency may cause undue social cost or adverse effects. Over-transparency may decrease public confidence and the process for transparency may also hinder

  19. Thermally stable, transparent, pressure-sensitive adhesives from epoxidized and dihydroxyl soybean oil.

    Science.gov (United States)

    Ahn, B Kollbe; Kraft, Stefan; Wang, D; Sun, X Susan

    2011-05-09

    Thermal stability and optical transparency are important factors for flexible electronics and heat-related applications of pressure-sensitive adhesives (PSAs). However, current acryl- and rubber-based PSAs cannot attain the required thermal stability, and silicon-based PSAs are much more expensive than the alternatives. Oleo-chemicals including functionalized plant oils have great potential to replace petrochemicals. In this study, novel biobased PSAs from soybean oils were developed with excellent thermal stability and transparency as well as peel strength comparable to current PSAs. In addition, the fast curing (drying) property of newly developed biobased PSAs is essential for industrial applications. The results show that soybean oil-based PSA films and tapes have great potential to replace petro-based PSAs for a broad range of applications including flexible electronics and medical devices because of their thermal stability, transparency, chemical resistance, and potential biodegradability from triglycerides.

  20. On the electronic nature of silicon and germanium based oxynitrides and their related mechanical, optical and vibrational properties as obtained from DFT and DFPT

    KAUST Repository

    Goumri-Said, Souraya; Kanoun-Bouayed, Nawel; Reshak, A. H.; Kanoun, Mohammed

    2012-01-01

    frequency, density of phonon states are calculated using the density functional perturbed theory. Thermodynamic properties of Si 2N 2O and Ge 2N 2O, such as heat capacity and Debye temperature, are given for reference. Our study suggests that Si 2N 2O and Ge

  1. Kinetic and equilibrium aspects of adsorption and desorption of class II hydrophobins HFBI and HFBII at silicon oxynitride/water and air/water interfaces.

    Science.gov (United States)

    Krivosheeva, Olga; Dėdinaitė, Andra; Linder, Markus B; Tilton, Robert D; Claesson, Per M

    2013-02-26

    Hydrophobins are relatively small globular proteins produced by filamentous fungi. They display unusual high surface activity and are implied as mediators of attachment to surfaces, which has resulted in high scientific and technological interest. In this work we focus on kinetic and equilibrium aspects of adsorption and desorption properties of two representatives of class II hydrophobins, namely HFBI and HFBII, at a negatively charged hydrophilic solid/water interface and at the air/water interface. The layers formed at the air/liquid interface were examined in a Langmuir trough, whereas layers formed at the solid/liquid interface were studied using dual polarization interferometry (DPI) under different flow conditions. For comparison, another globular protein, lysozyme, was also investigated. It was found that both the adsorbed amount and the adsorption kinetics were different for HFBI and HFBII, and the adsorption behavior of both hydrophobins on the negatively charged surface displayed some unusual features. For instance, even though the adsorption rate for HFBI was slowed down with increasing adsorbed amount as expected from packing constraints at the interface, the adsorption kinetics curves for HFBII displayed a region indicating adsorption cooperativity. Further, it was found that hydrophobin layers formed under flow partly desorbed when the flow was stopped, and the desorption rate for HFBII was enhanced in the presence of hydrophobins in solution.

  2. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Transparency as Ideal and Practice

    DEFF Research Database (Denmark)

    Garsten, Christina; Jacobsson, Kerstin

    2016-01-01

    New Public Management (NPM) ideas and practices have significantly reshaped labour market policy. This article takes a closer look at some of the implications of NPM practices and “audit culture” at local Public Employment Service (PES) authorities in Sweden. Based on interviews with staff...... of government” that make transparent and “legible” desirable traits in the individual. Such classificatory schemes, we argue, are integral parts of the operational procedures of NPM. Moreover, the analysis shows that the categories through which the individual moves are plastic and pliable in relation...... to political predicates and labour market fluctuations. In this process, employability and disability become floating categories...

  4. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  5. Thin film silicon photovoltaics: Architectural perspectives and technological issues

    Energy Technology Data Exchange (ETDEWEB)

    Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

    2009-10-15

    Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

  6. Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H-SiC in diluted N{sub 2}O ambient

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Yew Hoong [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

    2012-10-15

    A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N{sub 2}O ambient (10-100%) at 500 Degree-Sign C for 15 min to form Zr-oxynitride on 4H-SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N{sub 2}O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr-O-N and/or Zr-N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: Black-Right-Pointing-Pointer Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. Black-Right-Pointing-Pointer Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N{sub 2}O gas. Black-Right-Pointing-Pointer Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. Black-Right-Pointing-Pointer The highest electrical breakdown and highest reliability at diluted N{sub 2}O of 10%.

  7. Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Jumpei; Oka, Daichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp; Yang, Chang; Fukumura, Tomoteru; Hasegawa, Tetsuya [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [University of Tsukuba Tandem Accelerator Complex (UTTAC), 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577 (Japan)

    2015-12-07

    Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoO{sub x}N{sub y}) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoO{sub x}N{sub y} thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoO{sub x}N{sub y} thin films monotonically decreased from the order of 10{sup 5} Ω cm to 10{sup −4} Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoO{sub x}N{sub y} phase, which has not yet been reported in Co{sup 2+}/Co{sup 3+} mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoO{sub x}N{sub y} phase, on the 10{sup −3} Ω cm order, may have originated from the intermediate spin state of Co{sup 3+} stabilized by the lowered crystal field symmetry of the CoO{sub 6−n}N{sub n} octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoO{sub x}N{sub y} films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides.

  8. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  9. Transparency in nanophotonic quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)

    2009-03-28

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  10. Transparency in nanophotonic quantum wires

    International Nuclear Information System (INIS)

    Singh, Mahi R

    2009-01-01

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  11. Nuclear transparency: the French example

    International Nuclear Information System (INIS)

    Phuc Tran Dai

    2016-01-01

    In France nuclear industry is from far the industrial sector that has set the most numerous commissions that allow a dialogue with the public in order to favor transparency. There are 4 local structures of information: -)there are 38 Local Committees of Information (CLI) associated with nuclear facilities, -) the Information Committees (CI) associated with secret nuclear facilities, -) the Follow-up Committees (CSS) for facilities dedicated to the processing of wastes, and the Committees for the prevention of industrial pollution (SPPPI). These committees involve numerous actors: public service, industrialists, supervisory authorities, elected representatives, employee representatives, members of associations and residents living nearby. Since 2000, 10 national public hearings around the 'atom' have been organized by the CNDP (National Commission for Public Consultation). Most actors of the nuclear industry allow residents living nearby to visit their installations, EDF ranks 3 as the company most visited with 400.000 people a year. Following the nuclear example the French chemical industry progressively moves toward more transparency. (A.C.)

  12. Narrative Transparency: Adopting a Rhetorical Stance

    DEFF Research Database (Denmark)

    Arnould, Eric; Press, Melea

    2014-01-01

    In this paper, we look at how alternative marketing organisations communicate transparency in a climate of generalised risk and scepticism. We contrast the traditional numeric approach to transparency, which involves auditing and third-party certifications; with an alternative approach that we call...... narrative transparency. Central to narrative transparency is an emphasis on stake-holder dialogue and an invitation to stake-holders to play the role of auditor. This article illustrates how alternative marketing organisations engage in rhetorical tactics central to a narrative approach, to communicate...... transparency to their stakeholders. These rhetorical tactics include persona, allegory, consumer sovereignty and enlightenment. Community supported agriculture programmes from across the United States are the context for this study. Findings enrich discussions about best practices for transparency...

  13. Privacy-Preserving Transparency-Enhancing Tools

    OpenAIRE

    Pulls, Tobias

    2012-01-01

    Transparency is a key principle in democratic societies. For example, the public sector is in part kept honest and fair with the help of transparency through different freedom of information (FOI) legislations. In the last decades, while FOI legislations have been adopted by more and more countries worldwide, we have entered the information age enabled by the rapid development of information technology. This has led to the need for technological solutions that enhance transparency, for exampl...

  14. Towards Transparency in Finance and Governance

    OpenAIRE

    Tara Vishwanath; Daniel Kaufmann

    2003-01-01

    The study of transparency is increasingly a more topical, broadly relevant, but also more under-researched enterprise. The Asian financial crisis has highlighted not only the welfare consequences of financial sector transparency, sparking a series of yet unresolved debates, but has also linked this relatively narrow problem to the broader context of transparency in governance. Its significance has broadened geographically as well as across different sectors. It has been observed that curtailm...

  15. The Multi-Faceted Concept of Transparency

    OpenAIRE

    Forssbæck, Jens; Oxelheim, Lars

    2014-01-01

    Transparency has become a catchword and in the economic-political debate is often seen as a universal remedy for all sorts of problems. In this paper, we analyze and discuss the meaning and use of the concept of transparency in economic research. We look for common denominators across different areas where the concept is used, and find that transparency in essence is about reductions in information asymmetries, and therefore entails the transfer of information from a sender to a receiver. Tra...

  16. Transparent metals for ultrabroadband electromagnetic waves.

    Science.gov (United States)

    Fan, Ren-Hao; Peng, Ru-Wen; Huang, Xian-Rong; Li, Jia; Liu, Yongmin; Hu, Qing; Wang, Mu; Zhang, Xiang

    2012-04-17

    Making metals transparent, which could lead to fascinating applications, has long been pursued. Here we demonstrate that with narrow slit arrays metallic plates become transparent for extremely broad bandwidths; the high transmission efficiency is insensitive to the metal thickness. This work provides a guideline to develop novel devices, including transparent conducting panels, broadband metamaterials, and antireflective solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Liquidity and Transparency in Bank Risk Management

    OpenAIRE

    Lev Ratnovski

    2013-01-01

    Banks may be unable to refinance short-term liabilities in case of solvency concerns. To manage this risk, banks can accumulate a buffer of liquid assets, or strengthen transparency to communicate solvency. While a liquidity buffer provides complete insurance against small shocks, transparency covers also large shocks but imperfectly. Due to leverage, an unregulated bank may choose insufficient liquidity buffers and transparency. The regulatory response is constained: while liquidity buffers ...

  18. 3 CFR - Transparency and Open Government

    Science.gov (United States)

    2010-01-01

    ... system of transparency, public participation, and collaboration. Openness will strengthen our democracy... public. Government should be participatory. Public engagement enhances the Government's effectiveness and...

  19. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent

    2017-10-09

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  20. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2017-01-01

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  1. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  2. Pursuing transparency through science courts

    Energy Technology Data Exchange (ETDEWEB)

    Field, Thomas G. Jr. [Franklin Pierce Law Center, Concord, NH (United States)

    1999-12-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards.

  3. Pursuing transparency through science courts

    International Nuclear Information System (INIS)

    Field, Thomas G. Jr.

    1999-01-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards

  4. Pursuing transparency through science courts

    Energy Technology Data Exchange (ETDEWEB)

    Field, Jr, Thomas G [Franklin Pierce Law Center, Concord, NH (United States)

    1999-12-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards.

  5. Radiation-shielding transparent material

    International Nuclear Information System (INIS)

    Kusumeki, Asao.

    1983-01-01

    Purpose : To obtain radiation-shielding transparent material having a high resistivity to the radioactive rays or light irradiation which is greater at least by two digits as compared with lead glass. Constitution : The shielding material is composed of a saturated aqueous solution zinc iodide. Zinc iodide (specific gravity of 4.2) is dissolved by 430 g into 100 cc of water at a temperature of 20 0 C and forms a heavy liquid with a specific gravity of 2.80. The radiation length of the heavy liquid is 3.8 cm which is 1.5 times as large as lead glass. The light transmission is greater than 95% in average. Furthermore, by adding hypophosphorous acid as a reducing agent to the aqueous solution of the lead iodide, the material is stabilized against the irradiation of light or radioactive rays and causes no discoloration for a long time. (Moriyama, K.)

  6. Transparency and public value : Analyzing the transparency practices and value creation of public utilities

    NARCIS (Netherlands)

    Douglas, S.C.; Meijer, A.J.

    2016-01-01

    This article examines to what extent transparency is a condition for the creation of public value. Transparency is usually narrowly defined as a tool for external stakeholders to monitor the internal workings of an organization, but public value management positions transparency as a broader

  7. The properties of nanocomposite aluminium-silicon based thin films deposited by filtered arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bendavid, A.; Martin, P.J.; Takikawa, H

    2002-12-02

    Thin films of aluminium silicon oxynitride have been deposited on conducting (100) silicon wafers by filtered arc deposition (FAD) under nitrogen and/or oxygen gas flow. The influence of the N{sub 2}/O{sub 2} flow ratio on the crystal structure, optical and mechanical properties has been investigated. The results of X-ray diffraction showed that the film structure comprised of an AlN crystallite with amorphous Si{sub 3}N{sub 4} and SiO{sub x}. The optical properties over the range of 350-800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on N{sub 2}/O{sub 2} flow ratio. The refractive index values of the films were measured to be in the range of 2.2-1.64 at a wavelength of 670 nm for oxygen flow range of 0-100%. The hardness of the films was found to be strongly dependent on the oxygen content in the film. The hardness range of the films was between 10 and 22 GPa and for the stress between 0.3 and 1.2 GPa.

  8. Atomically Bonded Transparent Superhydrophobic Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, Tolga [ORNL

    2015-08-01

    Maintaining clarity and avoiding the accumulation of water and dirt on optically transparent surfaces such as US military vehicle windshields, viewports, periscope optical head windows, and electronic equipment cover glasses are critical to providing a high level of visibility, improved survivability, and much-needed safety for warfighters in the field. Through a combination of physical vapor deposition techniques and the exploitation of metastable phase separation in low-alkali borosilicate, a novel technology was developed for the fabrication of optically transparent, porous nanostructured silica thin film coatings that are strongly bonded to glass platforms. The nanotextured films, initially structurally superhydrophilic, exhibit superior superhydrophobicity, hence antisoiling ability, following a simple but robust modification in surface chemistry. The surfaces yield water droplet contact angles as high as 172°. Moreover, the nanostructured nature of these coatings provides increased light scattering in the UV regime and reduced reflectivity (i.e., enhanced transmission) over a broad range of the visible spectrum. In addition to these functionalities, the coatings exhibit superior mechanical resistance to abrasion and are thermally stable to temperatures approaching 500°C. The overall process technology relies on industry standard equipment and inherently scalable manufacturing processes and demands only nontoxic, naturally abundant, and inexpensive base materials. Such coatings, applied to the optical components of current and future combat equipment and military vehicles will provide a significant strategic advantage for warfighters. The inherent self-cleaning properties of such superhydrophobic coatings will also mitigate biofouling of optical windows exposed to high-humidity conditions and can help decrease repair/replacement costs, reduce maintenance, and increase readiness by limiting equipment downtime.

  9. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  10. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  11. Superhydrophobic transparent films from silica powder: Comparison of fabrication methods

    KAUST Repository

    Liu, Li-Der; Lin, Chao-Sung; Tikekar, Mukul; Chen, Ping-Hei

    2011-01-01

    The lotus leaf is known for its self-clean, superhydrophobic surface, which displays a hierarchical structure covered with a thin wax-like material. In this study, three fabrication techniques, using silicon dioxide particles to create surface roughness followed by a surface modification with a film of polydimethylsiloxane, were applied on a transparent glass substrate. The fabrication techniques differed mainly on the deposition of silicon dioxide particles, which included organic, inorganic, and physical methods. Each technique was used to coat three samples of varying particle load. The surface of each sample was evaluated with contact angle goniometer and optical spectrometer. Results confirmed the inverse relationships between contact angle and optical transmissivity independent of fabrication techniques. Microstructural morphologies also suggested the advantage of physical deposition over chemical methods. In summary, the direct sintering method proved outstanding for its contact angle vs transmissivity efficiency, and capable of generating a contact angle as high as 174°. © 2011 Elsevier B.V. All rights reserved.

  12. Superhydrophobic transparent films from silica powder: Comparison of fabrication methods

    KAUST Repository

    Liu, Li-Der

    2011-07-01

    The lotus leaf is known for its self-clean, superhydrophobic surface, which displays a hierarchical structure covered with a thin wax-like material. In this study, three fabrication techniques, using silicon dioxide particles to create surface roughness followed by a surface modification with a film of polydimethylsiloxane, were applied on a transparent glass substrate. The fabrication techniques differed mainly on the deposition of silicon dioxide particles, which included organic, inorganic, and physical methods. Each technique was used to coat three samples of varying particle load. The surface of each sample was evaluated with contact angle goniometer and optical spectrometer. Results confirmed the inverse relationships between contact angle and optical transmissivity independent of fabrication techniques. Microstructural morphologies also suggested the advantage of physical deposition over chemical methods. In summary, the direct sintering method proved outstanding for its contact angle vs transmissivity efficiency, and capable of generating a contact angle as high as 174°. © 2011 Elsevier B.V. All rights reserved.

  13. Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

    Science.gov (United States)

    Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

    2017-08-01

    We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

  14. Transparent face recognition in the home environment

    NARCIS (Netherlands)

    Beumer, G.M.; Veldhuis, Raymond N.J.; Bazen, A.M.

    2004-01-01

    The BASIS project is about the secure application of transparent biometrics in the home environment. Due to transparency and home-setting requirements there is variance in appearance of the subject. An other problem which needs attention is the extraction of features. The quality of the extracted

  15. Transparency | IDRC - International Development Research Centre

    International Development Research Centre (IDRC) Digital Library (Canada)

    Transparency means openness. It allows Canadians to hold the government accountable through the proactive release of information on government activities, programs, policies, and services in formats that are easy to find, access, and use. Transparency is the key element in the Government of Canada's Commitment to ...

  16. 78 FR 14149 - 2012 Fiscal Transparency Report

    Science.gov (United States)

    2013-03-04

    .... Therefore, a published budget that does not include significant cash or non-cash resources, including... transparency is a critical element of effective public financial management, helps build market confidence, and sets the stage for economic sustainability. Transparency also provides a window into government budgets...

  17. Substantive Transparency Requirements in International Investment Law

    NARCIS (Netherlands)

    Pohl, Jens Hillebrand

    2017-01-01

    Few concepts in public governance evoke a more positive sentiment than transparency. Whether ultimately grounded in expediency or morality, transparency has emerged out of its municipal origins and been received at the international plane. This article examines the current state of evolution of the

  18. Transparency and Its Determinants at Colombian Universities

    Science.gov (United States)

    Flórez-Parra, Jesús Mauricio; López-Pérez, María Victoria; López-Hernández, Antonio Manuel

    2017-01-01

    Over the past decade, one of the demands upon public institutions, among which we find universities, has been for transparency and improvement of accountability. In this context, Colombian universities are introducing different methods of management and governance aimed at addressing the demands of society generally in relation to transparency and…

  19. 18 CFR 358.7 - Transparency rule.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Transparency rule. 358.7 Section 358.7 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION... Transparency rule. (a) Contemporaneous disclosure. (1) If a transmission provider discloses non-public...

  20. Single side Emitting Transparent OLED lamp

    NARCIS (Netherlands)

    Lifka, H.; Verschuren, C.A.; Bruls, D.M.; Tanase, C.

    2011-01-01

    Transparent OLEDs offer great potential for novel applications. Preferably, the light should be emitted from one side only. This can bedone to some extent by modifying electrode thicknesses, but at the cost of reduced transparency. Here, we demonstrate a new approach tomake single side emissive

  1. Transparency in netchains : evaluation and perspective

    NARCIS (Netherlands)

    Hofstede, G.J.; Schepers, H.E.; Trienekens, J.H.

    2003-01-01

    This paper was written for KLICT to evaluate the focus area Transparency in Netchains. It revisits the definitions and research agenda in the review paper with which the focal area started (Hofstede 2002). The definition of transparency has turned out to serve its purpose. The research has

  2. Can transparency be measured - a look ahead

    International Nuclear Information System (INIS)

    Jorle, A.

    2007-01-01

    The simple answer to this question is no. But if you define the expression and decide transparency actually is, the answer might be different. Transparency means different things in different places. In one country transparency meant almost total access to anything that a government authority has in its possession. In another country transparency is more strict access to certain decisions, decisions makers or documents written with the sole purpose of informing the public. What variables could be found in the word transparent, what is a transparent regulator? In this short presentation we will deal with some important settings or fundamental prerequisites for a regulator calling itself transparent. Perhaps we should look at them in order of importance. Some days it is difficult to do all at once. As a final point, if we as regulators wish to call ourselves transparent in a future with diminishing national borders, fast electronic communication and increasing world wide media impact, what does the world require from us as regulators? (author)

  3. Organizational Transparency in the Internet Industry

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    as a panacea to concerns about privacy, organizational conduct and accountability, this paper explores the boundary work that goes into doing and promising transparency Using insights from the literature on transparency, ´sociologies of translations' and process approaches to organization, this paper captures...

  4. Transparency, price-dependent demand and product variety

    OpenAIRE

    Gu, Yiquan; Wenzel, Tobias

    2010-01-01

    This paper revisits the relationship between transparency on the consumer side and product variety as analyzed in Schultz (2009). We identify two welfare effects of transparency. More transparency decreases price-cost margins which is beneficial forwelfare. On the other hand, more transparency reduces variety which can be positive or negative for welfare. Overall, more transparency is always welfareimproving.

  5. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  6. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  7. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  8. The impact of records management system in transparency of public administrations: Transparency by design

    Directory of Open Access Journals (Sweden)

    Agustí Cerrillo Martínez

    2018-05-01

    Full Text Available Records management system has a great impact in the improvement of transparency in public administration. Transparency by design refers to the inclusion of transparency duties stated by legislation in force in the records’ life cycle in a way that it guarantees citizens effective access to public information. In this paper, the changes that public administrations have to propel in their records management systems to improve public transparency and to make easy access to information are analysed. In particular, as a case study, provisions made by Law 19/2014, of December 29, on Transparency, Access to Public Information and Good Governance of Catalonia are explored.

  9. Competition for transparency as a carrier of competition. Transparency needs in the European wholesale electricity markets

    International Nuclear Information System (INIS)

    Jong, Hanneke de; Hakvoort, Rudi

    2005-01-01

    This paper analyses different transparency aspects regarding European wholesale electricity markets and discusses transparency issues to be solved. In Europe, currently some progress has been made with respect to market transparency but transparency issues related to transmission, system operation and regulation have received little attention so far. Transmission system operators (TSOs) and regulatory authorities need certain market information in order to secure efficient competition. However, TSOs and regulatory authorities need to communicate themselves in order to facilitate competition and decrease uncertainty among market participants. Furthermore, considering ongoing market integration both TSOs and regulatory authorities must exchange information amongst themselves in order to facilitate coordination and monitoring activities. The effect of a higher level of transparency on effective competition is depended on two categories of transparency aspects: aspects that are related to transparency in the sense of open and adequate communication (perspicuity) and aspects that are related to the easiness to understand (clarity). Transparency includes both aspects. Pursuing overall harmonization of the European transparency level is important to fully profit from a higher level of (international) harmonization. Effective harmonization requires harmonization on all communication aspects. For Europe, with its many immature markets, the dilemma remains whether it is preferable to have less transparency with a high level of harmonization or to have a higher level of transparency but a lower level of harmonization. (Author)

  10. Optical micro-cavities on silicon

    Science.gov (United States)

    Dai, Daoxin; Liu, Erhu; Tan, Ying

    2018-01-01

    Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

  11. Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

    Science.gov (United States)

    Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

    2016-04-01

    The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

  12. Transmission in Optically Transparent Core Networks

    Science.gov (United States)

    Kilper, Dan; Jensen, Rich; Petermann, Klaus; Karasek, Miroslav

    2007-03-01

    Call for Papers: Transmission in Optically Transparent Core Networks Guest Feature Editors Dan Kilper and Rich Jensen, Coordinating Associate Editors Klaus Petermann and Miroslav Karasek, Guest Feature Editors Submission deadline: 15 June 2007 Optically transparent networks in which optical transport signals are routed uninterrupted through multiple nodes have long been viewed as an important evolutionary step in fiber optic communications. More than a decade of research and development on transparent network technologies together with the requisite traffic growth has culminated in the recent deployment of commercial optically transparent systems. Although many of the traditional research goals of optical transmission remain important, optical transparency introduces new challenges. Greater emphasis is placed on system efficiency and control. The goal of minimizing signal terminations, which has been pursued through increasing reach and channel capacity, also can be realized through wavelength routing techniques. Rather than bounding system operation by rigid engineering rules, the physical layer is controlled and managed by automation tools. Many static signal impairments become dynamic due to network reconfiguration and transient fault events. Recently new directions in transmission research have emerged to address transparent networking problems. This special issue of the Journal of Optical Networking will examine the technologies and theory underpinning transmission in optically transparent core networks, including both metropolitan and long haul systems. Scope of Submission The special issue editors are soliciting high-quality original research papers related to transmission in optically transparent core networks. Although this does not include edge networks such as access or enterprise networks, core networks that have access capabilities will be considered in scope as will topics related to the interworking between core and edge networks. The core network

  13. Analysis of an anti-reflecting nanowire transparent electrode for solar cells

    Science.gov (United States)

    Zhao, Zhexin; Wang, Ken Xingze; Fan, Shanhui

    2017-03-01

    Transparent electrodes are an important component in many optoelectronic devices, especially solar cells. In this paper, we investigate a nanowire transparent electrode that also functions as an anti-reflection coating for silicon solar cells, taking into account the practical constraints that the electrode is typically encapsulated and needs to be in electric contact with the semiconductor. Numerical simulations show that the electrode can provide near-perfect broadband anti-reflection over much of the frequency range above the silicon band gap for both polarizations while keeping the sheet resistance sufficiently low. To provide insights into the physics mechanism of this broadband anti-reflection, we introduce a generalized Fabry-Perot model, which captures the effects of the higher order diffraction channels as well as the modification of the reflection coefficient of the interface introduced by the nanowires. This model is validated using frequency-domain electromagnetic simulations. Our work here provides design guidelines for nanowire transparent electrode in a device configuration that is relevant for solar cell applications.

  14. Transparency in Global Environmental Governance: A Coming of Age?

    NARCIS (Netherlands)

    Gupta, A.

    2010-01-01

    This introductory article draws on the contributions to this special issue to consider the implications of a transparency turn in global environmental and sustainability governance. Three interrelated aspects are addressed: why transparency now? How is transparency being institutionalized? And what

  15. 76 FR 7522 - Federal Acquisition Regulation; Enhancing Contract Transparency

    Science.gov (United States)

    2011-02-10

    ... transparency while retaining the protection of information that should be considered in the contracting process... the need for transparency in Government contracting information and believe these recommendations... Regulation; Enhancing Contract Transparency AGENCY: Department of Defense (DoD), General Services...

  16. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  17. Optimal Degrees of Transparency in Monetary Policymaking

    DEFF Research Database (Denmark)

    Jensen, Henrik

    2002-01-01

    According to most academics and policymakers, transparency in monetary policymaking is desirable. I examine this proposition in a small theoretical model emphasizing forward-looking private sector behavior. Transparency makes it easier for price setters to infer the central bank's future policy...... intentions, thereby making current inflation more responsive to policy actions. This induces the central bank to pay more attention to inflation rather than output gap stabilization. Then, transparency may be disadvantageous. It may actually be a policy-distorting straitjacket if the central bank enjoys low...

  18. Fiscal Transparency and Procyclical Fiscal Policy

    DEFF Research Database (Denmark)

    Andersen, Asger Lau; Nielsen, Lasse Holbøll Westh

    This paper examines why fiscal policy is procyclical in developing as well as developed countries. We introduce the concept of fiscal transparency into a model of retrospective voting, in which a political agency problem between voters and politicians generates a procyclical bias in government...... spending. The introduction of fiscal transparency generates two new predictions: 1) the procyclical bias in fiscal policy arises only in good times; and 2) a higher degree of fiscal transparency reduces the bias in good times. We find solid empirical support for both predictions using data on both OECD...

  19. Double optomechanical transparency with direct mechanical interaction

    International Nuclear Information System (INIS)

    Li Ling-Chao; Shi Rao; Xu Jun; Hu Xiang-Ming

    2015-01-01

    We present a mechanism for double transparency in an optomechanical system. This mechanism is based on the coupling of a moving cavity mirror to a second mechanical oscillator. Due to the purely mechanical coupling and the radiation pressure, three pathways are established for excitations of the probe photons into the cavity photons. Destructive interference occurs at two different frequencies, leading to double transparency to the probe field. It is the coupling strength between the mechanical oscillators that determines the locations of the transparency windows. Moreover, the normal splitting appears for the generated Stokes field and the four-wave mixing process is inhibited on resonance. (paper)

  20. Consumer poaching, brand switching, and price transparency

    DEFF Research Database (Denmark)

    Schultz, Christian

    2014-01-01

    This paper addresses price transparency on the consumer side in markets with behavioral price discrimination which feature welfare reducing brand switching. When long-term contracts are not available, an increase in transparency intensifies competition, lowers prices and profits, reduces brand...... switching and benefits consumers and welfare. With long-term contracts, an increase in transparency reduces the use of long-term contracts, leading to more brand switching and a welfare loss. Otherwise, the results are the same as without long-term contracts....

  1. Federal Funding Accountability and Transparency Act frequently asked questions

    Science.gov (United States)

    One stop shop for Federal Funding Accountability and Transparency Act (FFATA) questions. This frequently asked document will assist with Federal Funding Accountability and Transparency Act (FFATA) related questions.

  2. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  3. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

    Science.gov (United States)

    Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

    2017-10-11

    Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

  4. Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

    2009-09-01

    We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

  5. Spin-on nanostructured silicon-silica film displaying room-temperature nanosecond lifetime photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, Y.; Hatton, B.; Miguez, H.; Coombs, N.; Fournier-Bidoz, S.; Ozin, G.A. [Materials Chemistry Research Group, Department of Chemistry, Lash Miller Chemical Laboratories, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6 (Canada); Grey, J.K.; Beaulac, R.; Reber, C. [Department of Chemistry, University of Montreal, Montreal, Quebec H3C 3J7 (Canada)

    2003-04-17

    A yellow transparent mesoporous silica film has been achieved by the incorporation of silicon nanoclusters into its channels. The resulting nanocomposite - fabricated using a combination of evaporation induced self- assembly and chemical vapor deposition - emits light brightly at visible wavelengths and has nanosecond radiative lifetimes at room temperature when excited by ultraviolet light (see Figure). (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  6. Enterprise wide transparent information access

    International Nuclear Information System (INIS)

    Brown, J.

    1995-05-01

    The information management needs of the Department of Energy (DOE) represents a fertile domain for the development of highly sophisticated yet intuitive enterprise-wide computing solutions. These solutions must support business operations, research agendas, technology development efforts, decision support, and other application areas with a user base ranging from technical staff to the highest levels of management. One area of primary interest is in the Environmental Restoration and Waste Management Branch of DOE. In this arena, the issue of tracking and managing nuclear waste related to the long legacy of prior defense production and research programs is one of high visibility and great concern. The Tank Waste Information Network System (TWINS) application has been created by the Pacific Northwest Laboratory (PNL) for the DOE to assist in managing and accessing the information related to this mission. The TWINS solution addresses many of the technical issues faced by other efforts to provide integrated information access to a wide variety of stakeholders. TWINS provides secure transparent access to distributed heterogeneous multimedia information sources from around the DOE complex. The users interact with the information through a consistent user interface that presents the desired data in a common format regardless of the structure of the source information. The solutions developed by the TWINS project represent an integration of several technologies and products that can be applied to other mission areas within DOE and other government agencies. These solutions are now being applied to public and private sector problem domains as well. The successful integration and inter-operation of both commercial and custom modules into a flexible and extensible information architecture will help ensure that new problems facing DOE and other clients can be addressed more rapidly in the future by re-use of existing tools and techniques proven viable through the TWINS efforts

  7. Dielectric strength behaviour and mechanical properties of transparent insulation materials suitable to optical monitoring of partial discharges

    International Nuclear Information System (INIS)

    Lothongkam, Chaiyaporn

    2014-01-01

    A novel optical detection method for partial discharge in HV/EHV cable terminations has been proposed. Optical sensor fibres integrated into the HV equipment provide high sensitivity as well as immunity to electromagnetic interference and enable therefore on-line monitoring in electromagnetically noisy environment. The availability of optically transparent silicone rubbers that meet strict dielectric and mechanical criteria is a crucial prerequisite for the implementation of this method. The optically transparent silicone rubbers can be applied for the fabrication of a modern rubber stress cone as well as for the development of a new optical sensing element sensitive to PD activities. In this thesis, AC dielectric strength behaviour and mechanical properties of three types of commercially available silicone rubbers were investigated. One of the characterized silicone rubbers was a translucent type whereas the two others were optically transparent types, however with different chemical curing reactions. The measurements of tensile strength and elongation at break were carried out according to the ISO 37 standard. For investigation of the dielectric strength E b behaviour of the virgin and modified silicone rubbers, a new methodology was developed. It is, at the same time, highly reliable and efficient, saves time and reduces material consumption in comparison to previously reported methodologies. The key component of this methodology is a specifically developed test facility. Furthermore, the methodology comprises determinations for easy preparation and handling of high-quality test specimens. This test method provides various advantages over other methods that have previously been used for measurement of the fundamental quantity E b value of silicone rubbers. Both technical and economic demands are satisfied. The new facility also enables cost-effective routine tests in material research laboratories. The high quality of the obtained test results was verified by

  8. Transparent soil for imaging the rhizosphere.

    Directory of Open Access Journals (Sweden)

    Helen Downie

    Full Text Available Understanding of soil processes is essential for addressing the global issues of food security, disease transmission and climate change. However, techniques for observing soil biology are lacking. We present a heterogeneous, porous, transparent substrate for in situ 3D imaging of living plants and root-associated microorganisms using particles of the transparent polymer, Nafion, and a solution with matching optical properties. Minerals and fluorescent dyes were adsorbed onto the Nafion particles for nutrient supply and imaging of pore size and geometry. Plant growth in transparent soil was similar to that in soil. We imaged colonization of lettuce roots by the human bacterial pathogen Escherichia coli O157:H7 showing micro-colony development. Micro-colonies may contribute to bacterial survival in soil. Transparent soil has applications in root biology, crop genetics and soil microbiology.

  9. Broadband plasmon induced transparency in terahertz metamaterials

    KAUST Repository

    Zhu, Zhihua

    2013-04-25

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena and an enhanced nonlinear effect. However, the transparency mode is normally localized in a narrow frequency band, which thus restricts many of its applications. Here we present the simulation, implementation, and measurement of a broadband PIT metamaterial functioning in the terahertz regime. By integrating four U-shape resonators around a central bar resonator, a broad transparency window across a frequency range greater than 0.40 THz is obtained, with a central resonance frequency located at 1.01 THz. Such PIT metamaterials are promising candidates for designing slow light devices, highly sensitive sensors, and nonlinear elements operating over a broad frequency range. © 2013 IOP Publishing Ltd.

  10. Federal Funding Accountability and Transparency Act

    Science.gov (United States)

    Public Law 109-282, the Federal Funding Accountability and Transparency Act of 2006 as amended (FFATA), requires disclosure of all entities and organizations receiving Federal funds through a single publicly accessible website.

  11. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-01-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high

  12. Learning, Transparency and Relationship Building: Ethiopian ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Learning, Transparency and Relationship Building: Ethiopian Women Parliamentarians and Young Female University Students. IDRC's Democratic Governance, Women's Rights and Gender Equality initiative is supporting a body of comparative research on whether and how democratic processes and institutions are ...

  13. Broadband plasmon induced transparency in terahertz metamaterials

    International Nuclear Information System (INIS)

    Zhu Zhihua; Yang Xu; Gu Jianqiang; Jiang Jun; Tian Zhen; Han Jiaguang; Zhang Weili; Yue Weisheng; Tonouchi, Masayoshi

    2013-01-01

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena and an enhanced nonlinear effect. However, the transparency mode is normally localized in a narrow frequency band, which thus restricts many of its applications. Here we present the simulation, implementation, and measurement of a broadband PIT metamaterial functioning in the terahertz regime. By integrating four U-shape resonators around a central bar resonator, a broad transparency window across a frequency range greater than 0.40 THz is obtained, with a central resonance frequency located at 1.01 THz. Such PIT metamaterials are promising candidates for designing slow light devices, highly sensitive sensors, and nonlinear elements operating over a broad frequency range. (paper)

  14. On transparent potentials: a Born approximation study

    International Nuclear Information System (INIS)

    Coudray, C.

    1980-01-01

    In the frame of the scattering inverse problem at fixed energy, a class of potentials transparent in Born approximation is obtained. All these potentials are spherically symmetric and are oscillating functions of the reduced radial variable. Amongst them, the Born approximation of the transparent potential of the Newton-Sabatier method is found. In the same class, quasi-transparent potentials are exhibited. Very general features of potentials transparent in Born approximation are then stated. And bounds are given for the exact scattering amplitudes corresponding to most of the potentials previously exhibited. These bounds, obtained at fixed energy, and for large values of the angular momentum, are found to be independent on the energy

  15. Transparency of atom-sized superconducting junctions

    International Nuclear Information System (INIS)

    Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

    1995-01-01

    We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

  16. Transparent conducting film: Effect of mechanical stretching

    Indian Academy of Sciences (India)

    We describe in this paper a transparent conducting film (TCF). ... conducting carbon nanotube film which is crack-resistant for solar cell applications. ... CA 90095, USA; Nanocomp Technologies, Inc, 162 Pembroke Road, Concord, NH 03301 ...

  17. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  18. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  19. Construction of 2D transparent micromodels in polyester resin with porosity similar to carrots

    Directory of Open Access Journals (Sweden)

    Rodrigo Emilio Díaz

    2011-12-01

    Full Text Available Microscopic visualization, especially in transparent micromodels, can provide valuable information to understand the transport phenomena at pore scale in different process occurring in porous materials (food, timber, soils, etc.. Micromodels studies focus mainly on the observation of multi-phase flow, which presents a greater proximity to reality. The aim of this study was to study the process of flexography and its application in the manufacture of polyester resin transparent micromodels and its application to carrots. Materials used to implement a flexo station for micromodels construction were thermoregulated water bath, exposure chamber to UV light, photosensitive substance (photopolymer, RTV silicone polyester resin, and glass plates. In this paper, data on size distribution of a particular kind of carrot we used, and a transparent micromodel with square cross-section as well as a Log-normal pore size distribution with pore radii ranging from 10 to 110 µm (average of 22 µm and micromodel size of 10 × 10 cm were built. Finally, it stresses that it has successfully implemented the protocol processing 2D polyester resin transparent micromodels.

  20. Transparent conducting oxides and production thereof

    Science.gov (United States)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  1. Transparency in nursing leadership: a chosen ethic.

    Science.gov (United States)

    Milton, Constance L

    2009-01-01

    The concept of transparency has been viewed as an essential leadership attribute or element in healthcare organizational structures and processes. While viewed as something that is desired and valued, there is a lack of nursing disciplinary literature that defines the concept and its possible meanings. This column provides a beginning definition of transparency from the humanbecoming nursing theoretical perspective and launches a discussion with potential ethical implications for leadership in nursing practice and education.

  2. Transparent wood for functional and structural applications

    Science.gov (United States)

    Li, Yuanyuan; Fu, Qiliang; Yang, Xuan; Berglund, Lars

    2017-12-01

    Optically transparent wood combines mechanical performance with optical functionalities is an emerging candidate for applications in smart buildings and structural optics and photonics. The present review summarizes transparent wood preparation methods, optical and mechanical performance, and functionalization routes, and discusses potential applications. The various challenges are discussed for the purpose of improved performance, scaled-up production and realization of advanced applications. This article is part of a discussion meeting issue `New horizons for cellulose nanotechnology'.

  3. Transparent Hydrophobic Coating by Sol Gel Method

    International Nuclear Information System (INIS)

    Mohd Hamzah Harun; Nik Ghazali Nik Salleh; Mahathir Mohamed; Mohd Sofian Alias

    2016-01-01

    Transparent hydrophobic coating of inorganic based tetra orthosilicate (TEOS) was prepared by sol gel method by varying fluoroalkylsilane (FAS) content which works as hydrophobic agent. Surface contact angle, transmittance degree and surface morphology were characterized for each sample. All samples show good transparency which was confirmed by UV visible spectroscopy. The hydrophobicity obtained increases with FAS content indicates that FAS is best candidate to induce hydrophobicity for inorganic coating. (author)

  4. Transparent, high mobility InGaZnO thin films deposited by PLD

    International Nuclear Information System (INIS)

    Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

    2008-01-01

    Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

  5. Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application

    Directory of Open Access Journals (Sweden)

    Yu Han-Young

    2010-01-01

    Full Text Available Abstract We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850–1,000°C and 2–8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

  6. Highly transparent triboelectric nanogenerator for harvesting water-related energy reinforced by antireflection coating

    Science.gov (United States)

    Liang, Qijie; Yan, Xiaoqin; Gu, Yousong; Zhang, Kui; Liang, Mengyuan; Lu, Shengnan; Zheng, Xin; Zhang, Yue

    2015-03-01

    Water-related energy is an inexhaustible and renewable energy resource in our environment, which has huge amount of energy and is not largely dictated by daytime and sunlight. The transparent characteristic plays a key role in practical applications for some devices designed for harvesting water-related energy. In this paper, a highly transparent triboelectric nanogenerator (T-TENG) was designed to harvest the electrostatic energy from flowing water. The instantaneous output power density of the T-TENG is 11.56 mW/m2. Moreover, with the PTFE film acting as an antireflection coating, the maximum transmittance of the fabricated T-TENG is 87.4%, which is larger than that of individual glass substrate. The T-TENG can be integrated with silicon-based solar cell, building glass and car glass, which demonstrates its potential applications for harvesting waste water energy in our living environment and on smart home system and smart car system.

  7. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

  8. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  9. Transparency in Canadian public drug advisory committees.

    Science.gov (United States)

    Rosenberg-Yunger, Zahava R S; Bayoumi, Ahmed M

    2014-11-01

    Transparency in health care resource allocation decisions is a criterion of a fair process. We used qualitative methods to explore transparency across 11 Canadian drug advisory committees. We developed seven criteria to assess transparency (disclosure of members' names, disclosure of membership selection criteria, disclosure of conflict of interest guidelines and members' conflicts, public posting of decisions not to fund drugs, public posting of rationales for decisions, stakeholder input, and presence of an appeals mechanism) and two sub-criteria for when rationales were posted (direct website link and readability). We interviewed a purposeful sample of key informants who were conversant in English and a current or past member of either a committee or a stakeholder group. We analyzed data using a thematic approach. Interviewing continued until saturation was reached. We examined documents from 10 committees and conducted 27 interviews. The median number of criteria addressed by committees was 2 (range 0-6). Major interview themes included addressing: (1) accessibility issues, including stakeholders' degree of access to the decision making process and appeal mechanisms; (2) communication issues, including improving internal and external communication and public access to information; and (3) confidentiality issues, including the use of proprietary evidence. Most committees have some mechanisms to address transparency but none had a fully transparent process. The most important ways to improve transparency include creating formal appeal mechanisms, improving communication, and establishing consistent rules about the use of, and public access to, proprietary evidence. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  10. Electromagnetically induced transparency with matched pulses

    International Nuclear Information System (INIS)

    Harris, S.E.

    1993-01-01

    In the last several years there have been studies and experiments showing how, by applying an additional laser beam, optically-thick transitions may be rendered nearly transparent to probing radiation. This transparency results from a quantum interference, very much like a Fano interference, which is established by the additional laser. This talk describes the difference between the quantum interference as exhibited by an independent atom and by an optically-thick ensemble of atoms. We find that an ensemble of atoms establishes transparency through a strong nonlinear interaction which, for a lambda system, tends to generate a matching temporal envelope on the complementary transition. For a ladder system, phase conjugate pulses are generated and, after a characteristic distance, establish transparency. The transparency of an optically-thick medium is therefore not a Beer's law superposition of the independent atom response. To transmit a pulse through an otherwise opaque media, the front edge of the complementary pulse should lead, in the manner of open-quotes counter-intuitiveclose quotes adiabatic transfer, the front edge of the pulse which is to be rendered transparent. Thereafter the pulses should be matched or, for a ladder system, phase-conjugately matched

  11. Lutetium oxide-based transparent ceramic scintillators

    Science.gov (United States)

    Seeley, Zachary; Cherepy, Nerine; Kuntz, Joshua; Payne, Stephen A.

    2016-01-19

    In one embodiment, a transparent ceramic of sintered nanoparticles includes gadolinium lutetium oxide doped with europium having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YEu.sub.YO.sub.3, where X is any value within a range from about 0.05 to about 0.45 and Y is any value within a range from about 0.01 to about 0.2, and where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm. In another embodiment, a transparent ceramic scintillator of sintered nanoparticles, includes a body of sintered nanoparticles including gadolinium lutetium oxide doped with a rare earth activator (RE) having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YRE.sub.YO.sub.3, where RE is selected from the group consisting of: Sm, Eu, Tb, and Dy, where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm.

  12. Multilayer Transparent Top Electrode for Solution Processed Perovskite/Cu(In,Ga)(Se,S)2 Four Terminal Tandem Solar Cells.

    Science.gov (United States)

    Yang, Yang Michael; Chen, Qi; Hsieh, Yao-Tsung; Song, Tze-Bin; Marco, Nicholas De; Zhou, Huanping; Yang, Yang

    2015-07-28

    Halide perovskites (PVSK) have attracted much attention in recent years due to their high potential as a next generation solar cell material. To further improve perovskites progress toward a state-of-the-art technology, it is desirable to create a tandem structure in which perovskite may be stacked with a current prevailing solar cell such as silicon (Si) or Cu(In,Ga)(Se,S)2 (CIGS). The transparent top electrode is one of the key components as well as challenges to realize such tandem structure. Herein, we develop a multilayer transparent top electrode for perovskite photovoltaic devices delivering an 11.5% efficiency in top illumination mode. The transparent electrode is based on a dielectric/metal/dielectric structure, featuring an ultrathin gold seeded silver layer. A four terminal tandem solar cell employing solution processed CIGS and perovskite cells is also demonstrated with over 15% efficiency.

  13. Gold-coated iron nanoparticles in transparent Si3N4 matrix thin films

    Science.gov (United States)

    Sánchez-Marcos, J.; Céspedes, E.; Jiménez-Villacorta, F.; Muñoz-Martín, A.; Prieto, C.

    2013-06-01

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si3N4 system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si3N4 multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  14. Cerium-doped single crystal and transparent ceramic lutetium aluminum garnet scintillators

    International Nuclear Information System (INIS)

    Cherepy, Nerine J.; Kuntz, Joshua D.; Tillotson, Thomas M.; Speaks, Derrick T.; Payne, Stephen A.; Chai, B.H.T.; Porter-Chapman, Yetta; Derenzo, Stephen E.

    2007-01-01

    For rapid, unambiguous isotope identification, scintillator detectors providing high-resolution gamma ray spectra are required. We have fabricated Lutetium Aluminum Garnet (LuAG) using transparent ceramic processing, and report a 2-mm thick ceramic exhibiting 75% transmission and light yield comparable to single-crystal LuAG:Ce. The LuAG:Ce luminescence peaks at 550 nm, providing an excellent match for Silicon Photodiode readout. LuAG is dense (6.67 g/cm 3 ) and impervious to water, exhibits good proportionality and a fast decay (∼40 ns), and we measure light yields in excess of 20,000 photons/MeV

  15. Transparent Patch Antenna on a-Si Thin Film Glass Solar Module

    OpenAIRE

    Roo Ons, Maria; Shynu, S.; Ammann, Max; McCormack, Sarah; Norton, Brian

    2011-01-01

    An optically transparent microstrip patch mounted on the surface of a commercially available solar module is proposed. The patch comprises a thin sheet of clear polyester with a conductive coating. The amorphous silicon solar cells in the module are used as both photovoltaic generator and antenna ground plane. The proposed structure provides a peak gain of 3.96 dBi in the 3.4-3.8 GHz range without significantly compromising the light transmission in the module. A comparison between copper and...

  16. Radiative cooling of solar absorbers using a visibly transparent photonic crystal thermal blackbody

    Science.gov (United States)

    Zhu, Linxiao; Raman, Aaswath P.; Fan, Shanhui

    2015-01-01

    A solar absorber, under the sun, is heated up by sunlight. In many applications, including solar cells and outdoor structures, the absorption of sunlight is intrinsic for either operational or aesthetic considerations, but the resulting heating is undesirable. Because a solar absorber by necessity faces the sky, it also naturally has radiative access to the coldness of the universe. Therefore, in these applications it would be very attractive to directly use the sky as a heat sink while preserving solar absorption properties. Here we experimentally demonstrate a visibly transparent thermal blackbody, based on a silica photonic crystal. When placed on a silicon absorber under sunlight, such a blackbody preserves or even slightly enhances sunlight absorption, but reduces the temperature of the underlying silicon absorber by as much as 13 °C due to radiative cooling. Our work shows that the concept of radiative cooling can be used in combination with the utilization of sunlight, enabling new technological capabilities. PMID:26392542

  17. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  18. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  19. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  20. Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

    International Nuclear Information System (INIS)

    Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

    2010-01-01

    Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi 2 Ta 2 O 9 (SBT)/HfO 2 /Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O 2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH 3 at various temperatures in the range 950–1150 °C. The electrical properties of the Pt/SBT/HfO 2 /SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO 2 gate stacks formed on Si substrates subjected to various treatments: SiN x /Si formed by RTN, SiO 2 /Si formed by RTO and untreated Si. The Pt/SBT/HfO 2 /SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C

  1. Novel tunable green-red-emitting oxynitride phosphors co-activated with Ce3+, Tb3+, and Eu3+: photoluminescence and energy transfer.

    Science.gov (United States)

    Huo, Jiansheng; Dong, Langping; Lü, Wei; Shao, Baiqi; You, Hongpeng

    2017-07-14

    A series of novel Ce 3+ , Tb 3+ and Eu 3+ ion doped Y 4 SiAlO 8 N-based oxynitride phosphors were synthesized by the solid-state method and characterized by X-ray powder diffraction, scanning electron microscopy, photoluminescence, lifetimes and thermo-luminescence. The excitation of the Ce 3+ /Tb 3+ co-doped and Ce 3+ /Tb 3+ /Eu 3+ tri-doped phosphor with near-UV radiation results in strong linear Tb 3+ green and Eu 3+ red emission. The occurrence of Ce 3+ -Tb 3+ and Ce 3+ -Tb 3+ -Eu 3+ energy transfer processes is responsible for the bright green or red luminescence. The Tb 3+ ion acting as an energy transfer bridge can alleviate MMCT quenching between the Ce 3+ -Eu 3+ ion pairs. The lifetime measurements demonstrated that the energy-transfer mechanisms of Ce 3+ → Tb 3+ and Tb 3+ → Eu 3+ are dipole-quadrupole and quadrupole-quadrupole interactions, respectively. The temperature dependent luminescence measurements showed that as-prepared green/red phosphors have good thermal stability against temperature quenching. The obtained results indicate that these phosphors might serve as promising candidates for n-UV LEDs.

  2. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  3. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  4. Organizational Transparency & Sense Making: The case of Northern Rock

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Wehmeier, Stefan

    2014-01-01

    Organizational transparency is associated with mutual understanding and consensus between the organization and its constituents, but is typically defined as information disclosure. Such definitions pose the risk of simplification and provide incomplete understandings of the transparency phenomenon....... Additionally, research rarely focuses on how transparency is translated within crisis situations. This article presents a sense-making and discourse analysis perspective of transparency. We use the case of the British bank Northern Rock to show how this bank and its stakeholders enacted transparency...

  5. Transparent Data Encryption -- Solution for Security of Database Contents

    OpenAIRE

    Deshmukh, Dr. Anwar Pasha; Qureshi, Dr. Riyazuddin

    2013-01-01

    The present study deals with Transparent Data Encryption which is a technology used to solve the problems of security of data. Transparent Data Encryption means encrypting databases on hard disk and on any backup media. Present day global business environment presents numerous security threats and compliance challenges. To protect against data thefts and frauds we require security solutions that are transparent by design. Transparent Data Encryption provides transparent, standards-based secur...

  6. Economy and Transparency: The Model Invention

    Directory of Open Access Journals (Sweden)

    Mahmud Hassan TALUKDAR

    2013-12-01

    Full Text Available Relation of Transparency and Economic growth is a long global debate in the society. Theoretically, policy makers, scholars and researchers argue that there is a close relation among these two variables. However, the quantitative relation and any global model is yet unrevealed. So, the main aim of this paper is to ascertain the nature, dimension and extent of the relationship between economy and Transparency as well as to invent a global model. This paper is useful for researchers, planners, policy makers and scholars who are directly or indirectly involved or willing to involve in the thrust for quantitative relation of these two variables. Literature review is the main source of information of this study. In introductory section, this paper briefly describes theoretical relationship of economy and Transparency as well as it also describes the proxy variables.GDP (2012 of different countries are used as proxy of Economy and Corruption Perception Index (CPI scores (2012 of different countries are used as proxy of level of Transparency. In methodology section this paper describes the detail methodology, sampling procedure and level of analysis. This study randomly selects 30 countries (10 from higher CPI scores+10 from moderate CPI scores+ 10 from lower CPI scores around the globe as sample. In the third section, this research presents the correlation value which divulge that there is a positive correlation (p=.047 with 95% confidence level. That reveals, if the level of transparency of any country increase, the GDP also increase accordingly. Then in this section two quantitative models are developed using linear regression analysis. First invented model is: Economy (GDP in billion US$ = [(8.983*Level of transparency -108.11]. This paper termed the first invented model as “Mahmud EcoT Model-1”. This model calibrates that one unit improvement of transparency leads 8.98 billion US$ improvement in the GDP of a country. Then taking this unit

  7. Transparency in Europe: A Quantitative Study.

    Science.gov (United States)

    Bouder, Frederic; Way, Dominic; Löfstedt, Ragnar; Evensen, Darrick

    2015-07-01

    In recent years, European pharmaceutical regulators have increasingly committed to heightening access to raw safety-related data as part of a wave of transparency initiatives (e.g., providing public Internet-mediated access to clinical trials data). Yet, the regulators--who are under significant pressure--have not yet benefited from a systematic review of this new policy. In seeking to inject much needed evidence, this article explores the effects of new transparency policies designed to promote meaningful communication of risks and benefits to patients. Results of a cross-national European survey with respondents from Great Britain, the Netherlands, Spain, France, Germany, and Sweden (N = 5,648) shed light on how patients and the public are likely to react to the regulators' new transparency policies. The findings demonstrate clear national variations in how European citizens are likely to react and emphasize the need to develop evidence-based, reasoned transparency policies that integrate benefit-risk communication. The authors conclude by providing six specific recommendations, informed by the study, that seek to improve the European transparency model both within the medical field and across health, safety, and environmental policy domains. © 2015 Society for Risk Analysis.

  8. PUBLIC SECTOR TRANSPARENCY:A CONCEPTUAL DISSECTION

    Directory of Open Access Journals (Sweden)

    Mara Andreea SÎNTEJUDEANU

    2014-06-01

    Full Text Available The concept of transparency has increasingly attracted the attention of academic, political and business areas. Many studies have demonstrated the need for adopting this corporate governance principle also in the public sector, a phenomenon that has become widespread at international level. The academic study field defines transparency as the ability to look clearly through the window of an institution. Starting from this statement, the research focuses on the importance of transparency in public governance and on the framework for identifying and assessing this concept. Furthermore, this paper also analysis the limits of this notion in order to maintain its significance and effectiveness. Thus, based on the literature review, this study summarizes the opinions and arguments of various authors in the field regarding the notion of transparency in the public sector. At the same time, it analysis the conclusions of empirical studies on this topic. The results of the study reveal the importance and necessity of information disclosure among different users for increasing citizens' trust in government and achieving good governance. However, the positive aspects of transparency tend to be overestimated and considering the ambiguity of this concept it should be carefully handled.

  9. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  10. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  11. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  12. Inventory transparency for agricultural produce through IOT

    Science.gov (United States)

    Srinivasan, S. P.; Sorna Shanthi, D.; Anand, Aashish V.

    2017-06-01

    Re-structuring the practices of traditional inventory management is becoming more essential to optimize the supply chain transparency and accuracy of agricultural produce. A flexible and transparent inventory management system is becoming the need of any agricultural commodity. It was noticed that the major setback for the farmers who are the suppliers of the farm produce is due to poor supply chain integration. The recent advent technologies and IT explosion can bring up a greater impact in the process of storing, tracking, distributing and monitoring perishable agriculture produce of day to day life. The primary focus of this paper is to integrate IoT into inventory management and other inbound logistics management of agriculture produce. The unique features of agricultural produce like a prediction of supply, demand, the location of warehouses, distribution and tracking of inventory can be integrated through IoT. This paper proposes a conceptual framework for inventory management transparency involved in the supply chain of agriculture produce.

  13. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  14. [Transparency in public health decision-making].

    Science.gov (United States)

    García-Altés, Anna; Argimon, Josep M

    2016-11-01

    Improving the quality and transparency of governmental healthcare decision-making has an impact on the health of the population through policies, organisational management and clinical practice. Moreover, the comparison between healthcare centres and the transparent feedback of results to professionals and to the wider public contribute directly to improved results. The "Results Centre" of the Catalan healthcare system measures and disseminates the results achieved by the different healthcare centres in order to facilitate a shared decision-making process, thereby enhancing the quality of healthcare provided to the population of Catalonia (Spain). This is a pioneering initiative in Spain and is aligned with the most advanced countries in terms of policies of transparency and accountability. Copyright © 2016 SESPAS. Publicado por Elsevier España, S.L.U. All rights reserved.

  15. Semantic transparency affects morphological priming . . . eventually.

    Science.gov (United States)

    Heyer, Vera; Kornishova, Dana

    2018-05-01

    Semantic transparency has been in the focus of psycholinguistic research for decades, with the controversy about the time course of the application of morpho-semantic information during the processing of morphologically complex words not yet resolved. This study reports two masked priming studies with English - ness and Russian - ost' nominalisations, investigating how semantic transparency modulates native speakers' morphological priming effects at short and long stimulus onset asynchronies (SOAs). In both languages, we found increased morphological priming for nominalisations at the transparent end of the scale (e.g. paleness - pale) in comparison to items at the opaque end of the scale (e.g. business - busy) but only at longer prime durations. The present findings are in line with models that posit an initial phase of morpho-orthographic (semantically blind) decomposition.

  16. Transparent Ceramic Scintillator Fabrication, Properties and Applications

    International Nuclear Information System (INIS)

    Cherepy, N.J.; Kuntz, J.D.; Roberts, J.J.; Hurst, T.A.; Drury, O.B.; Sanner, R.D.; Tillotson, T.M.; Payne, S.A.

    2008-01-01

    Transparent ceramics offer an alternative to single crystals for scintillator applications such as gamma ray spectroscopy and radiography. We have developed a versatile, scaleable fabrication method, using Flame Spray Pyrolysis (FSP) to produce feedstock which is readily converted into phase-pure transparent ceramics. We measure integral light yields in excess of 80,000 Ph/MeV with Cerium-doped Garnets, and excellent optical quality. Avalanche photodiode readout of Garnets provides resolution near 6%. For radiography applications, Lutetium Oxide offers a high performance metric and is formable by ceramics processing. Scatter in transparent ceramics due to secondary phases is the principal limitation to optical quality, and afterglow issues that affect the scintillation performance are presently being addressed

  17. Transparent Solar Concentrator for Flat Panel Display

    Science.gov (United States)

    Yeh, Chia-Hung; Chang, Fuh-Yu; Young, Hong-Tsu; Hsieh, Tsung-Yen; Chang, Chia-Hsiung

    2012-06-01

    A new concept of the transparent solar concentrator for flat panel display is experimentally demonstrated without adversely affecting the visual effects. The solar concentrator is based on a solar light-guide plate with micro prisms, not only increasing the absorption area of solar energy but also enhancing the conversion efficiency. The incident light is guided by the designed solar light-guide plate according to the total internal reflection (TIR), and converted into electrical power by photovoltaic solar cells. The designed transparent solar concentrator was made and measured with high transparency, namely 94.8%. The developed solar energy system for display can store energy and supply the bias voltage to light on two light-emitting diodes (LEDs) successfully.

  18. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  19. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  20. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.