WorldWideScience

Sample records for transparent oxide substrates

  1. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  2. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  3. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    International Nuclear Information System (INIS)

    Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

    2016-01-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

  4. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    Science.gov (United States)

    Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

    2016-02-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

  5. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  6. Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Shao-Kai Lu

    2014-03-01

    Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

  7. Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode

    International Nuclear Information System (INIS)

    Ko, Yoon Duk; Lee, Chang Hun; Moon, Doo Kyung; Kim, Young Sung

    2013-01-01

    This paper discusses the effect of oxygen on the transparent conducting properties and mechanical durability of the amorphous indium zinc tin oxide (IZTO) films. IZTO films deposited on flexible clear polyimide (PI) substrate using pulsed direct current (DC) magnetron sputtering at room temperature under various oxygen partial pressures. All IZTO films deposited at room temperature exhibit an amorphous structure. The electrical and optical properties of the IZTO films were sensitively influenced by oxygen partial pressures. At optimized deposition condition of 3.0% oxygen partial pressure, the IZTO film shows the lowest resistivity of 6.4 × 10 −4 Ωcm, high transmittance of over 80% in the visible range, and figure of merit value of 3.6 × 10 −3 Ω −1 without any heat controls. In addition, high work function and good mechanical flexibility of amorphous IZTO films are beneficial to flexible applications. It is proven that the proper oxygen partial pressure is important parameter to enhance the transparent conducting properties of IZTO films on PI substrate deposited at room temperature. - Highlights: • Indium zinc tin oxide (IZTO) films were deposited on polyimide at room temperature. • Transparent conducting properties of IZTO were influenced with oxygen partial pressure. • The smooth surface and high work function of IZTO were beneficial to anode layer. • The mechanical reliability of IZTO shows better performance to indium tin oxide film

  8. ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

    Directory of Open Access Journals (Sweden)

    Taylor Curtis

    2010-01-01

    Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.

  9. A transparent conductive oxide electrode with highly enhanced flexibility achieved by controlled crystallinity by incorporating Ag nanoparticles on substrates

    International Nuclear Information System (INIS)

    Triambulo, Ross E.; Cheong, Hahn-Gil; Lee, Gun-Hwan; Yi, In-Sook; Park, Jin-Woo

    2015-01-01

    Highlights: • We developed a composite transparent electrode with Ag nanoparticles and indium-tin-oxide. • Transmittance of AgNPs was improved by formation of oxide layers by O 2 plasma treatment. • Ag nanoparticles became crystalline seeds to grow strong ITO with a uniform growth orientation. • The hybrid electrode is highly more conductive and stable under bending than ITO. - Abstract: We report the synthesis of highly flexible indium tin oxide (ITO) on a polymer substrate whose surface was engineered by oxide-coated Ag nanoparticles (AgNPs) smaller than 20 nm in diameter. Polyimide (PI) substrates were spin coated with Ag ion ink and were subsequently heat treated to form AgNP coatings. The Ag oxide was formed by O 2 plasma treatment to reduce the light absorbance by AgNPs. ITO was dc magnetron sputter-deposited atop the AgNPs. The ITO on the AgNPs was crystalline grown primarily with (2 2 2) growth orientation. This contrasts to the typical microstructure of ITO grown on the polymer, which is that growing c-ITO nucleates are embedded in an amorphous ITO (a-ITO) matrix like a particulate composite. The surface roughness of ITO on AgNPs was as small as the ITO on PI without AgNPs. The crystalline nature of the ITO on the AgNP-coated polymer resulted in the decrease of electric resistivity (ρ) by 65% compared to that of ITO on the bare PI. Furthermore, an electric resistivity change (Δρ) of the ITO on the AgNPs was only 8% at a bending radius (r b ) down to 4 mm, whereas the ITO on the non-coated polymer became almost insulating at an r b of 10 mm, owing to a drastic increase in the number of cracks. To validate the potential application in the displays, flexible organic light emitting diodes (f-OLEDs) were fabricated on the ITO on AgNPs and the performances was compared with the f-OLED on ITO on the bare PI

  10. A transparent conductive oxide electrode with highly enhanced flexibility achieved by controlled crystallinity by incorporating Ag nanoparticles on substrates

    Energy Technology Data Exchange (ETDEWEB)

    Triambulo, Ross E.; Cheong, Hahn-Gil [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of); Lee, Gun-Hwan [Advanced Thin Film Research Group, Korea Institute of Materials Science (KIMS), Changwon (Korea, Republic of); Yi, In-Sook [R and D Center, InkTec Co., Ltd., Ansan (Korea, Republic of); Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

    2015-01-25

    Highlights: • We developed a composite transparent electrode with Ag nanoparticles and indium-tin-oxide. • Transmittance of AgNPs was improved by formation of oxide layers by O{sub 2} plasma treatment. • Ag nanoparticles became crystalline seeds to grow strong ITO with a uniform growth orientation. • The hybrid electrode is highly more conductive and stable under bending than ITO. - Abstract: We report the synthesis of highly flexible indium tin oxide (ITO) on a polymer substrate whose surface was engineered by oxide-coated Ag nanoparticles (AgNPs) smaller than 20 nm in diameter. Polyimide (PI) substrates were spin coated with Ag ion ink and were subsequently heat treated to form AgNP coatings. The Ag oxide was formed by O{sub 2} plasma treatment to reduce the light absorbance by AgNPs. ITO was dc magnetron sputter-deposited atop the AgNPs. The ITO on the AgNPs was crystalline grown primarily with (2 2 2) growth orientation. This contrasts to the typical microstructure of ITO grown on the polymer, which is that growing c-ITO nucleates are embedded in an amorphous ITO (a-ITO) matrix like a particulate composite. The surface roughness of ITO on AgNPs was as small as the ITO on PI without AgNPs. The crystalline nature of the ITO on the AgNP-coated polymer resulted in the decrease of electric resistivity (ρ) by 65% compared to that of ITO on the bare PI. Furthermore, an electric resistivity change (Δρ) of the ITO on the AgNPs was only 8% at a bending radius (r{sub b}) down to 4 mm, whereas the ITO on the non-coated polymer became almost insulating at an r{sub b} of 10 mm, owing to a drastic increase in the number of cracks. To validate the potential application in the displays, flexible organic light emitting diodes (f-OLEDs) were fabricated on the ITO on AgNPs and the performances was compared with the f-OLED on ITO on the bare PI.

  11. High spectral selectivity for solar absorbers using a monolayer transparent conductive oxide coated on a metal substrate

    Science.gov (United States)

    Shimizu, Makoto; Suzuki, Mari; Iguchi, Fumitada; Yugami, Hiroo

    2017-05-01

    A spectrally selective absorber composed of a monolayer transparent conductive oxide (TCO) coated on a metal substrate is investigated for use in solar systems operating at temperatures higher (>973 K) than the operation temperature of conventional systems ( ˜ 673 K). This method is different from the currently used solar-selective coating technologies, such as those using multilayered and cermet materials. The spectral selective absorption property can be attributed to the inherent optical property of TCO owing to the plasma frequency and interferences between the substrates. Since spectral selectivity can be achieved using monolayered materials, the effect of atomic diffusion occurring at each layer boundary in a multilayer or cermet coatings under high-temperature conditions can be reduced. In addition, since this property is attributed to the inherent property of TCO, the precise control of the layer thickness can be omitted if the layer is sufficiently thick (>0.5 μm). The optimum TCO properties, namely, carrier density and mobility, required for solar-selective absorbers are analyzed to determine the cutoff wavelength and emittance in the infrared range. A solar absorptance of 0.95 and hemispherical emittance of 0.10 at 973 K are needed for achieving the optimum TCO properties, i.e., a carrier density of 5.5 × 1020 cm-3 and mobility of 90 cm2 V-1 s-1 are required. Optical simulations indicate that the spectrally selective absorption weakly depends on the incident angle and film thickness. The thermal stability of the fabricated absorber treated at temperatures up to 973 K for 10 h is verified in vacuum by introducing a SiO2 interlayer, which plays an important role as a diffusion barrier.

  12. Spectral and optical performance of electrochromic poly(3,4-ethylenedioxythiophene) (PEDOT) deposited on transparent conducting oxide coated glass and polymer substrates

    International Nuclear Information System (INIS)

    Sindhu, S.; Narasimha Rao, K.; Ahuja, Sharath; Kumar, Anil; Gopal, E.S.R.

    2006-01-01

    Electrochromic devices utilizing conjugated polymers as electrochromic layers have gained increasing attention owing to their optical properties, fast switching times and contrast ratios. Polyethylenedioxythiophene (PEDOT) is an excellent material from its electrochromic properties, high conductivity and high stability in the doped form. Aqueous dispersions of PEDOT were either spin coated or electro-polymerized on transparent conducting oxide coated glass and polyethylene tetraphthalate (PET) film substrates. The spectro- and opto-electrochemical studies of the films on transparent conducting oxide coated glass/PET substrates were performed. These films have application in the fabrication of electrochromic windows (smart windows). Smart window devices having excellent switching characteristics over wide range of temperature are used for glazing applications. The aerospace industry is interested in the development of visors and windows that can control glare for pilots and passengers, especially if the coatings can be made on curved surfaces and electrically conducting

  13. Transparent conducting oxide nanotubes

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

    2014-09-01

    Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

  14. Nanostructured transparent conducting oxide electrochromic device

    Science.gov (United States)

    Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2016-05-17

    The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

  15. High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

    Directory of Open Access Journals (Sweden)

    Jung-Sik Kim

    2016-09-01

    Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

  16. Limits of transparency of transparent conducting oxides

    Science.gov (United States)

    Peelaers, Hartwin

    A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

  17. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  18. Synthesis of layered birnessite-type manganese oxide thin films on plastic substrates by chemical bath deposition for flexible transparent supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Hu Yu; Zhu Hongwei; Wang Jun [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen Zhenxing, E-mail: chenzx65@mail.sysu.edu.cn [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2011-10-20

    Highlights: > Layered birnessite-type MnO{sub 2} thin films are fabricated on ITO/PET substrates through a facile chemical bath deposition at room temperature. > The transmittance of the MnO{sub 2} thin films at 550 nm is up to 77.4%. > MnO{sub 2} thin films exhibit a special capacitance of 229.2 F g{sup -1} and 9.2 mF cm{sup -2}. > MnO{sub 2} thin films show a capacitance retention ratio of 83% after 1000 CV cycles. > MnO{sub 2} thin film electrodes show great mechanical flexibility and electrochemical stability even after 200 tensile and compressive bending cycles. - Abstract: Layered birnessite-type manganese oxide thin films are successfully fabricated on indium tin oxide coated polyethylene terephthalate substrates for flexible transparent supercapacitors by a facile, effective and inexpensive chemical bath deposition technology from an alkaline KMnO{sub 4} aqueous solution at room temperature. The effects of deposition conditions, including KMnO{sub 4} concentration, initial molar ratio of NH{sub 3}.H{sub 2}O and KMnO{sub 4}, bath temperature, and reaction time, on the electrochemical properties of MnO{sub 2} thin films are investigated. Layered birnessite-type MnO{sub 2} thin films deposited under optimum conditions display three-dimensional porous morphology, high hydrophilicity, and a transmittance of 77.4% at 550 nm. A special capacitance of 229.2 F g{sup -1} and a capacitance retention ratio of 83% are obtained from the films after 1000 cycles at 10 mV s{sup -1} in 1 M Na{sub 2}SO{sub 4}. Compressive and tensile bending tests show that as-prepared MnO{sub 2} thin film electrodes possess excellent mechanical flexibility and electrochemical stability.

  19. P -type transparent conducting oxides

    International Nuclear Information System (INIS)

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  20. Transparent conducting oxides and production thereof

    Science.gov (United States)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  1. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  2. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-01-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high

  3. High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

    International Nuclear Information System (INIS)

    Lee, Gwang Jun; Jang, Jae Eun; Kim, Joonwoo; Kim, Jung-Hye; Jeong, Soon Moon; Jeong, Jaewook

    2014-01-01

    We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate. (paper)

  4. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    International Nuclear Information System (INIS)

    Kashiwagi, Y.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-01-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded

  5. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Science.gov (United States)

    Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  6. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. [Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Koizumi, A.; Fujiwara, Y. [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Takemura, Y.; Murahashi, K.; Ohtsuka, K. [Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan); Furuta, S. [Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

  7. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  8. Flexible Transparent Electrode of Hybrid Ag-Nanowire/Reduced-Graphene-Oxide Thin Film on PET Substrate Prepared Using H2/Ar Low-Damage Plasma

    Directory of Open Access Journals (Sweden)

    Chi-Hsien Huang

    2017-01-01

    Full Text Available We employ H2/Ar low-damage plasma treatment (H2/Ar-LDPT to reduce graphene oxide (GO coating on a polymer substrate—polyethylene terephthalate (PET—with the assistance of atomic hydrogen (Hα at low temperature of 70 °C. Four-point probing and ultraviolet-visible (UV-Vis spectroscopy demonstrate that the conductivity and transmittance can be controlled by varying the H2/Ar flow rate, treatment time, and radio-frequency (RF power. Optical emission spectroscopy reveals that the Hα intensity depends on these processing parameters, which influence the removal of oxidative functional groups (confirmed via X-ray photoelectron spectroscopy to yield reduced GO (rGO. To further improve the conductivity while maintaining high transmittance, we introduce silver nanowires (AgNWs between rGO and a PET substrate to obtain a hybrid rGO/AgNWs/PET with a sheet resistance of ~100 Ω/sq and 81% transmittance. In addition, the hybrid rGO/AgNWs thin film also shows high flexibility and durability and is suitable for flexible and wearable electronics applications.

  9. Transparent oxide electronics from materials to devices

    CERN Document Server

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  10. Lutetium oxide-based transparent ceramic scintillators

    Science.gov (United States)

    Seeley, Zachary; Cherepy, Nerine; Kuntz, Joshua; Payne, Stephen A.

    2016-01-19

    In one embodiment, a transparent ceramic of sintered nanoparticles includes gadolinium lutetium oxide doped with europium having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YEu.sub.YO.sub.3, where X is any value within a range from about 0.05 to about 0.45 and Y is any value within a range from about 0.01 to about 0.2, and where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm. In another embodiment, a transparent ceramic scintillator of sintered nanoparticles, includes a body of sintered nanoparticles including gadolinium lutetium oxide doped with a rare earth activator (RE) having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YRE.sub.YO.sub.3, where RE is selected from the group consisting of: Sm, Eu, Tb, and Dy, where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm.

  11. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dewani, Aliya A., E-mail: a.ashraf@griffith.edu.au; O’Keefe, Steven G.; Thiel, David V.; Galehdar, Amir [School Of Electrical Engineering, Griffith University, Brisbane, 4111 (Australia)

    2015-02-15

    A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  12. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Science.gov (United States)

    Dewani, Aliya A.; O'Keefe, Steven G.; Thiel, David V.; Galehdar, Amir

    2015-02-01

    A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm), flexible transparent plastic substrate (relative permittivity 3.2). It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing) to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  13. Transparent Substrates for Plasmonic Sensing by Lithography-Free Fabrication

    DEFF Research Database (Denmark)

    Thilsted, Anil Haraksingh

    This Ph.D. thesis presents fabrication and optimization of transparent plasmonic substrates that can be used for biological and chemical sensing by surface enhanced Raman spectroscopy (SERS) sensing and localized surface plasmon resonance refractive index (LSPR RI) sensing. These substrates are......-free fabrication methods, and resulted in large-area, high throughput and low cost production techniques. The fabrication techniques consisted of using aluminum patterned areas and reactive ion etching (RIE) to achieve nanopillars or nanocylinders in glass; using RIE to achieve nanopillars in silicon as a mould......, respectively. As the substrates were transparent, measurements from the backside were possible, showing a 44%, 1:7% and 71% Raman signal intensity in comparison to the measurements from the front, for the glass nanopillars, the polymer injected nanopillars and the transferred metal nanocaps, respectively...

  14. Cellulose nanofibers/reduced graphene oxide flexible transparent conductive paper.

    Science.gov (United States)

    Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Li, Jia; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

    2013-08-14

    The cellulose nanofibers (CNFs) paper exhibit high visible light transmittance, high mechanical strength, and excellent flexibility. Therefore, CNFs paper may be an excellent substrate material for flexible transparent electronic devices. In this paper, we endeavor to prepare CNFs-based flexible transparent conductive paper by layer-by-layer (LbL) assembly using divalent copper ions (Cu(2+)) as the crosslinking agent. The thickness of the reduced graphene oxide (RGO) active layer in the CNFs paper can be controlled by the cycle times of the LbL assembly. CNFs/[RGO]20 paper has the sheet resistances of ∼2.5 kΩ/□, and the transmittance of about 76% at a wavelength of 550 nm. Furthermore, CNFs/[RGO]20 paper inherits the excellent mechanical properties of CNFs paper, and the ultimate strength is about 136 MPa. CNFs-based flexible transparent conductive paper also exhibits excellent electrical stability and flexibility. Copyright © 2013. Published by Elsevier Ltd.

  15. Nanostructured Transparent Conducting Oxides for Device Applications

    Science.gov (United States)

    Dutta, Titas

    2011-12-01

    Research on transparent conducting oxides (TCOs) alternative to indium tin oxide (ITO) has attracted a lot of attention due to the serious concern related to cost and chemical stability of indium tin oxide. The primary aim of this research is to develop low cost alternative transparent conducting oxides with an eye towards (1) increasing the organic solar cell efficiency and (2) fabricating transparent electronic devices utilizing p-type TCOs. To investigate the fundamental properties, the novel TCO films have been grown on sapphire and economical glass substrates using pulsed laser deposition (PLD) technique. The films were also grown under different deposition conditions in order to understand the effect of processing parameters on the film properties. The characteristics of the thin films have been investigated in detail using (X-ray diffraction, TEM, X-ray photoelectron spectroscopy (XPS), UV- photoelectron spectroscopy (UPS), four probe resistivity and UV-Vis transmittance measurements) in order to establish processing-structure-property correlation. ZnO doped with group III elements is a promising candidate because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function (4.4 eV, compared to that of 4.8 eV for ITO), which increases the energy barrier and affects the carrier transport across ZnGa0.05O/organic layer interface. To overcome this issue of ZnO based TCOs, the growth of bilayered structure consisting of very thin MoOx (2.0 target composition. These optimized bilayer films exhibited good optical transmittance (≥ 80%) and low resistivity of ˜ 10-4 O-cm. The optimized NiO1+x / GZO and MoOx / GZO bilayers showed significant increase in work function values (˜5.3 eV). The work function of the bilayer films was tuned by varying the processing conditions and doping of over layers. Preliminary test device results of the organic photovoltaic cells (OPVs

  16. Transparent conducting oxide top contacts for organic electronics

    KAUST Repository

    Franklin, Joseph B.

    2014-01-01

    A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200°C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150°C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5-75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Ω □-1 can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures-enabling the deposition of highly transparent AZO with sheet resistances below 50 Ω □-1 directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device. © 2014 The Royal Society of Chemistry. 2014.

  17. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    International Nuclear Information System (INIS)

    Mohd Ali, N I; Misran, N; Mansor, M F; Jamlos, M F

    2017-01-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified. (paper)

  18. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    Science.gov (United States)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  19. Transparent semiconducting oxides: materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Grundmann, Marius; Frenzel, Heiko; Lajn, Alexander; Lorenz, Michael; Schein, Friedrich; von Wenckstern, Holger [Universitaet Leipzig, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2010-06-15

    Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10{sup 21} cm{sup -3} range and high conductivity (beyond 10{sup 4} S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10{sup 14}-10{sup 18} cm{sup -3}) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits. Optical image of inverter based on thin film MESFETs with Mg{sub 0.003}Zn{sub 0.997}O channels (left) and experimental inverter characteristic for supply voltage of V{sub DD} = + 2.0 V (right). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

    2014-07-21

    A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

  1. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  2. Optically transparent frequency selective surfaces on flexible thin plastic substrates

    Directory of Open Access Journals (Sweden)

    Aliya A. Dewani

    2015-02-01

    Full Text Available A novel 2D simple low cost frequency selective surface was screen printed on thin (0.21 mm, flexible transparent plastic substrate (relative permittivity 3.2. It was designed, fabricated and tested in the frequency range 10-20 GHz. The plane wave transmission and reflection coefficients agreed with numerical modelling. The effective permittivity and thickness of the backing sheet has a significant effect on the frequency characteristics. The stop band frequency reduced from 15GHz (no backing to 12.5GHz with polycarbonate. The plastic substrate thickness beyond 1.8mm has minimal effect on the resonant frequency. While the inner element spacing controls the stop-band frequency, the substrate thickness controls the bandwidth. The screen printing technique provided a simple, low cost FSS fabrication method to produce flexible, conformal, optically transparent and bio-degradable FSS structures which can find their use in electromagnetic shielding and filtering applications in radomes, reflector antennas, beam splitters and polarizers.

  3. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  4. Electrical properties of transparent CNT and ITO coatings on PET substrate including nano-structural aspects

    Science.gov (United States)

    Park, Joung-Man; Wang, Zuo-Jia; Kwon, Dong-Jun; Gu, Ga-Young; Lawrence DeVries, K.

    2013-01-01

    Ultraviolet (UV)-visible spectra and surface resistance measurement were used to investigate optical transmittance and conductive properties of carbon nanotube (CNT) and indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates. Conductive CNT and ITO coatings were successfully fabricated on PET by a spray-coating method. Thin coatings of both materials exhibited good conductivity and transparency. Changes in electrical and optical properties of the coatings were studied as a function of the coating suspension concentration. Interfacial durability of the coatings on PET substrates was also investigated under fatigue and bending loads. CNT coated substrates, with high aspect ratios, exhibited no detectable change in surface resistance up to 2000 cyclic loadings, whereas the ITO coated substrates exhibited a substantial increase in surface resistance at 1000 loading cycles. This change in resistance is attributed to a reduction in the number and effectiveness of the electrical contact points due to the inherent brittle nature of ITO.

  5. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  6. Development of transparent thin film transistors on PES polymer substrates

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Ko, Kyung-Nam; Song, Young-Wook; Nam, Hyoung; Cho, Nam-Ihn

    2010-01-01

    In this study, we demonstrate ZnO-based transparent thin film transistors (TTFT's) implemented on polyethersulfone (PES) polymer substrates. For the developed TTFT's, radio-frequency magnetron sputter techniques were used to deposit Al-doped ZnO (AZO) at zero oxygen partial pressures for the source, the drain, and the gate-contact electrodes, undoped ZnO at low oxygen partial pressures for the active p-type layer, and SiO 2 for the gate dielectric. The TTFT's were processed at room temperature (RT), except for a 100 .deg. C sputtering step to deposit the AZO source, drain, and gate-contact electrodes. The devices have bottom-gate structures with top contacts, are optically transparent, and operate in an enhancement mode with a threshold voltage of +13 V, a mobility of 0.1 cm 2 /Vs, an on-off ratio of about 0.5 x 10 3 and, a sub-threshold slope of 4.1 V/decade.

  7. Ellipsometry of single-layer antireflection coatings on transparent substrates

    Science.gov (United States)

    Azzam, R. M. A.

    2017-11-01

    The complex reflection coefficients of p- and s-polarized light and ellipsometric parameters of a transparent substrate of refractive index n2, which is coated by a transparent thin film whose refractive index n1 =√{n2 } satisfies the anti-reflection condition at normal incidence, are considered as functions of film thickness d and angle of incidence ϕ. A unique coated surface, with n1 =√{n2 } and film thickness d equal to half of the film-thickness period Dϕ at angle ϕ and wavelength λ, reflects light of the same wavelength without change of polarization for all incident polarization states. (The reflection Jones matrix of such coated surface is the 2 × 2 identity matrix pre-multiplied by a scalar, hence tanΨ = 1,Δ = 0.) To monitor the deposition of an antireflection coating, the normalized Stokes parameters of obliquely reflected light (e.g. at ϕ =70∘) are measured until predetermined target values of those parameters are detected. This provides a more accurate means of film thickness control than is possible using a micro-balance technique or an intensity reflectance method.

  8. Metal oxide nanorod arrays on monolithic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

    2018-01-02

    A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

  9. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

    International Nuclear Information System (INIS)

    Madaria, Anuj R; Kumar, Akshay; Zhou Chongwu

    2011-01-01

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ DC /σ Op , for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ TE . Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  10. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens.

    Science.gov (United States)

    Madaria, Anuj R; Kumar, Akshay; Zhou, Chongwu

    2011-06-17

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  11. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

    International Nuclear Information System (INIS)

    Zhang Yong-Hui; Mei Zeng-Xia; Liang Hui-Li; Du Xiao-Long

    2017-01-01

    Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations. (paper)

  12. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  13. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  14. Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

    Science.gov (United States)

    Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

    2015-09-01

    The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

  15. Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

    International Nuclear Information System (INIS)

    Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

    2012-01-01

    Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

  16. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  17. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  18. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  19. Stretchable, Transparent, and Stretch-Unresponsive Capacitive Touch Sensor Array with Selectively Patterned Silver Nanowires/Reduced Graphene Oxide Electrodes.

    Science.gov (United States)

    Choi, Tae Young; Hwang, Byeong-Ung; Kim, Bo-Yeong; Trung, Tran Quang; Nam, Yun Hyoung; Kim, Do-Nyun; Eom, Kilho; Lee, Nae-Eung

    2017-05-31

    Stretchable and transparent touch sensors are essential input devices for future stretchable transparent electronics. Capacitive touch sensors with a simple structure of only two electrodes and one dielectric are an established technology in current rigid electronics. However, the development of stretchable and transparent capacitive touch sensors has been limited due to changes in capacitance resulting from dimensional changes in elastomeric dielectrics and difficulty in obtaining stretchable transparent electrodes that are stable under large strains. Herein, a stretch-unresponsive stretchable and transparent capacitive touch sensor array was demonstrated by employing stretchable and transparent electrodes with a simple selective-patterning process and by carefully selecting dielectric and substrate materials with low strain responsivity. A selective-patterning process was used to embed a stretchable and transparent silver nanowires/reduced graphene oxide (AgNWs/rGO) electrode line into a polyurethane (PU) dielectric layer on a polydimethylsiloxane (PDMS) substrate using oxygen plasma treatment. This method provides the ability to directly fabricate thin film electrode lines on elastomeric substrates and can be used in conventional processes employed in stretchable electronics. We used a dielectric (PU) with a Poisson's ratio smaller than that of the substrate (PDMS), which prevented changes in the capacitance resulting from stretching of the sensor. The stretch-unresponsive touch sensing capability of our transparent and stretchable capacitive touch sensor has great potential in wearable electronics and human-machine interfaces.

  20. Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers

    International Nuclear Information System (INIS)

    Koike, Katsuhiko; Yamazaki, Fumiharu; Okamura, Tomoyuki; Fukuda, Shin

    2007-01-01

    An optical filter for plasma display panel (PDP) requires an electromagnetic shield with very high ability. The authors investigated a transparent conductive multilayer coating consisting of silver (Ag) layers and transparent metal oxide layers. The durability of the multilayer sputter coating, including the silver layer, is very sensitive to the surrounding atmosphere. For example, after an exposure test they found discolored points on the multilayer sputter coatings, possibly caused by migration of silver atoms in the silver layers. In their investigation, they modified the top surface of the multilayer sputter coatings with transition metals to improve the corrosion resistance of the multilayer coating. Specifically, they deposited transition metals 0.5-2 nm thick on the top surface of the multilayer coatings by sputtering. They chose indium tin oxide (ITO) as the transparent metal oxide. They applied the multilayer sputter coatings of seven layers to a polyethylene terephthalate (PET) film substrate. A cross-sectional structure of the film with the multilayer coatings is PET film/ITO/Ag/ITO/Ag/ITO/Ag/ITO. They evaluated the corrosion resistance of the films by a salt-water immersion test. In the test, they immersed the film with multilayer coatings into salt water, and then evaluated the appearance, transmittance, and electrical resistance of the multilayer coatings. They investigated several transition metals as the modifying material, and found that titanium and tantalum drastically improved the resistance of the multilayer coatings to the salt-water exposure without a significant decline in transmittance. They also investigated the relation between elapsed time after deposition of the modifying materials and resistance to the salt water. Furthermore, they investigated the effects of a heat treatment and an oxide plasma treatment on resistance to the salt water

  1. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  2. Transparent heaters based on solution-processed indium tin oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Im, Kiju [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Cho, Kyoungah [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Kim, Jonghyun [Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Kim, Sangsig, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)

    2010-05-03

    We demonstrate transparent heaters constructed on glass substrates using solution-processed indium tin oxide (ITO) nanoparticles (NPs) and their heating capability. The heat-generating characteristics of the heaters depended significantly on the sintering temperature at which the ITO NPs deposited on a glass substrate by spin-coating were transformed thermally into a solid film. The steady-state temperature of the ITO NP film sintered at 400 {sup o}C was 163 {sup o}C at a bias voltage of 20 V, and the defrosting capability of the film was confirmed by using dry-ice.

  3. Method for production of transparent yttrium oxide

    International Nuclear Information System (INIS)

    Dutta, S.K.; Gazza, G.A.

    1975-01-01

    The method comprises vacuum hot pressing the yttrium oxide (Y 2 O 3 ) powder in a graphite die at temperatures of between 1300 to 1500 0 C and uniaxial pressures of between 5000 to 7000 psi, for a period of 1 to 2 hours. (U.S.)

  4. Perceptual asymmetry reveals neural substrates underlying stereoscopic transparency.

    Science.gov (United States)

    Tsirlin, Inna; Allison, Robert S; Wilcox, Laurie M

    2012-02-01

    We describe a perceptual asymmetry found in stereoscopic perception of overlaid random-dot surfaces. Specifically, the minimum separation in depth needed to perceptually segregate two overlaid surfaces depended on the distribution of dots across the surfaces. With the total dot density fixed, significantly larger inter-plane disparities were required for perceptual segregation of the surfaces when the front surface had fewer dots than the back surface compared to when the back surface was the one with fewer dots. We propose that our results reflect an asymmetry in the signal strength of the front and back surfaces due to the assignment of the spaces between the dots to the back surface by disparity interpolation. This hypothesis was supported by the results of two experiments designed to reduce the imbalance in the neuronal response to the two surfaces. We modeled the psychophysical data with a network of inter-neural connections: excitatory within-disparity and inhibitory across disparity, where the spread of disparity was modulated according to figure-ground assignment. These psychophysical and computational findings suggest that stereoscopic transparency depends on both inter-neural interactions of disparity-tuned cells and higher-level processes governing figure ground segregation. Copyright © 2011 Elsevier Ltd. All rights reserved.

  5. Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

    International Nuclear Information System (INIS)

    Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

    2016-01-01

    Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

  6. A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan; Bittner, Florian [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Hecht, David S.; Ladous, Corinne [Unidym, 1244 Reamwood Avenue, Sunnyvale, CA (United States); Ellinger, Jan [Tesa SE, Quickbornstr. 24, 20253 Hamburg (Germany); Oekermann, Torsten, E-mail: torstensan@t-online.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Wark, Michael, E-mail: michael.wark@techem.ruhr-uni-bochum.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstr. 3a, 30167 Hannover (Germany); Laboratory of Industrial Chemistry, Ruhr University Bochum, Universitaetsstr. 150, 44801 Bochum (Germany)

    2013-03-01

    A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy.

  7. TiO2 Nanotubes on Transparent Substrates: Control of Film Microstructure and Photoelectrochemical Water Splitting Performance

    Directory of Open Access Journals (Sweden)

    Matus Zelny

    2018-01-01

    Full Text Available Transfer of semiconductor thin films on transparent and or flexible substrates is a highly desirable process to enable photonic, catalytic, and sensing technologies. A promising approach to fabricate nanostructured TiO2 films on transparent substrates is self-ordering by anodizing of thin metal films on fluorine-doped tin oxide (FTO. Here, we report pulsed direct current (DC magnetron sputtering for the deposition of titanium thin films on conductive glass substrates at temperatures ranging from room temperature to 450 °C. We describe in detail the influence that deposition temperature has on mechanical, adhesion and microstructural properties of titanium film, as well as on the corresponding TiO2 nanotube array obtained after anodization and annealing. Finally, we measure the photoelectrochemical water splitting activity of different TiO2 nanotube samples showing that the film deposited at 150 °C has much higher activity correlating well with the lower crystallite size and the higher degree of self-organization observed in comparison with the nanotubes obtained at different temperatures. Importantly, the film showing higher water splitting activity does not have the best adhesion on glass substrate, highlighting an important trade-off for future optimization.

  8. A carbon nanotube-based transparent conductive substrate for flexible ZnO dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Du, Juan; Bittner, Florian; Hecht, David S.; Ladous, Corinne; Ellinger, Jan; Oekermann, Torsten; Wark, Michael

    2013-01-01

    A transparent carbon nanotube (CNT)-coated polyethylenterephthalat film was used as conducting substrate for the photoanode of a flexible ZnO-based dye-sensitized solar cell (DSSC). The porous ZnO films were fabricated by an electrochemical deposition method at low temperature. Electrochemical impedance spectroscopy revealed that the CNT/ZnO interface adds to the overall impedance of the cell, leading to a higher series resistance compared to DSSCs based on substrates employing a transparent conducting oxide. Nevertheless, an overall conversion efficiency of 2.5% was obtained with porous ZnO films electrodeposited on the CNT substrate for 60 min. Thicker films led to an increased loss by recombination, which could not be compensated by faster electron transport due to the decrease of the light intensity inside the ZnO film with increasing distance from the back contact. - Highlights: ► ZnO was electrochemically deposited on carbon nanotube (CNT) coated polymer. ► Highly porous ZnO was obtained at temperatures not exceeding 70 °C. ► The porous ZnO was tested as photoanode in dye-sensitized solar cells. ► Conversion efficiency of 2.5% was found on the high resistance CNT substrates. ► Barriers formed at the CNT–ZnO interface are determined by impedance spectroscopy

  9. Graphene oxide overprints for flexible and transparent electronics

    Energy Technology Data Exchange (ETDEWEB)

    Rogala, M., E-mail: rogala@uni.lodz.pl; Wlasny, I.; Kowalczyk, P. J.; Busiakiewicz, A.; Kozlowski, W.; Klusek, Z. [Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, 90-236 Lodz (Poland); Dabrowski, P.; Lipinska, L.; Jagiello, J.; Aksienionek, M.; Strupinski, W.; Krajewska, A. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Sieradzki, Z. [Electrotechnological Company QWERTY Ltd., Siewna 21, 94-250 Lodz (Poland); Krucinska, I.; Puchalski, M.; Skrzetuska, E. [Department of Material and Commodity Sciences and Textile Metrology, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland)

    2015-01-26

    The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications.

  10. Flexural Capability of Patterned Transparent Conductive Substrate by Performing Electrical Measurements and Stress Simulations

    Directory of Open Access Journals (Sweden)

    Chang-Chun Lee

    2016-10-01

    Full Text Available The suitability of stacked thin films for next-generation display technology was analyzed based on their properties and geometrical designs to evaluate the mechanical reliability of transparent conducting thin films utilized in flexural displays. In general, the high bending stress induced by various operation conditions is a major concern regarding the mechanical reliability of indium–tin–oxide (ITO films deposited on polyethylene terephthalate (PET substrates; mechanical reliability is commonly used to estimate the flexibility of displays. However, the pattern effect is rarely investigated to estimate the mechanical reliability of ITO/PET films. Thus, this study examined the flexible content of patterned ITO/PET films with two different line widths by conducting bending tests and sheet resistance measurements. Moreover, a stress–strain simulation enabled by finite element analysis was performed on the patterned ITO/PET to explore the stress impact of stacked film structures under various levels of flexural load. Results show that the design of the ITO/PET film can be applied in developing mechanically reliable flexible electronics.

  11. Novel transparent conducting oxide technology for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, P.T.; Sutton, P.A.; Gardener, M.; Wakefield, G.

    2005-07-01

    This report outlines the development of both n- and p-type transparent Conducting Oxide (TCO) materials and the demonstrated feasibility of economic production of TCO films by deposition techniques. Descriptions are given of the four main tasks of the project with Task A concentrating on material design and synthesis covering the new precursor to zinc oxide thin films and selection of polymers for formulation; Task B dealing with film formation involving film deposition by spin coating, screen printing, inkjet printing, dip coating and chemical vapour deposition; Task C concerning performance evaluation; and Task D examining manufacturing process development. The prospects for commercialisation are explored and recommendation for future work are considered.

  12. Field-emission properties of transparent tungsten oxide nano-urchins

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyung [Kyungpook National University, Nano-applied Physics Laboratory, Department of Physics, Daegu (Korea, Republic of)

    2012-09-15

    The field-emission properties of transparent tungsten oxide nano-urchin (NU) films deposited on conducting glass substrates were examined. The novel crystalline tungsten oxide NUs consisted of nanowires added to a spherical shell. The WO{sub 2.72} NUs showed better field-emission properties than the WO{sub 3} NUs with a low turn-on field of approximately 5.8 V/{mu}m and a current density as high as 1.3 mA/cm{sup 2} at 7.2 V/mm. The WO{sub x} NUs films could be used in FE applications using a large-area glass substrate without the need for a catalyst and a mechanical rubbing or lift-up process. These results have implications for the enhancement of FE properties by further tuning the WO{sub x} phases. (orig.)

  13. Modified silver nanowire transparent electrodes with exceptional stability against oxidation

    International Nuclear Information System (INIS)

    Idier, J; Neri, W; Ly, I; Poulin, P; Backov, R; Labrugère, C

    2016-01-01

    We report an easy method to prepare thin, flexible and transparent electrodes that show enhanced inertness toward oxidation using modified silver nanowires (Ag NWs). Stabilization is achieved through the adsorption of triphenylphosphine (PPh 3 ) onto the Ag NW hybrid dispersions prior to their 2D organization as transparent electrodes on polyethylene terephtalate (PET) films. After 110 days in air (20 °C) under atmospheric conditions, the transmittance of the PET/Ag NW/PPh 3 based films is nearly unchanged, while the transmittance of the PET/Ag NW-based films decreases by about 5%. The sheet resistance increases for both materials as time elapses, but the rate of increase is more than four times slower for films stabilized by PPh 3 . The improved transmittance and conductivity results in a significantly enhanced stability for the figure of merit σ dc /σ op . This phenomenon is highlighted in highly oxidative nitric acid vapor. The tested stabilized films in such conditions exhibit a decrease to σ dc /σ op of only 38% after 75 min, whereas conventional materials exhibit a relative loss of 71%. In addition, by contrast to other classes of stabilizers, such as polymer or graphene-based encapsulants, PPh 3 does not alter the transparency or conductivity of the modified films. While the present films are made by membrane filtration, the stabilization method could be implemented directly in other liquid processes, including industrially scalable ones. (paper)

  14. Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

    2008-01-01

    Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

  15. Optimum angle of incidence for monochromatic interference in transparent films on absorbing substrates

    International Nuclear Information System (INIS)

    Muller, R.H.; Sand, M.L.

    1980-01-01

    Angles of incidence for s- and p-polarized light have been computed and confirmed experimentally for which monochromatic interference in transparent thin films on absorbing substrates results in optimum interference fringe contrast (visibility=1). Under these angles of incidence and with polarized light, film thickness determinations which are not possible at normal incidence or with unpolarized light can be carried out by use of thin-film interference

  16. Synthesis and magnetic properties of bulk transparent PMMA/Fe-oxide nanocomposites

    Science.gov (United States)

    Li, Shanghua; Qin, Jian; Fornara, Andrea; Toprak, Muhammet; Muhammed, Mamoun; Kim, Do Kyung

    2009-05-01

    PMMA/Fe-oxide nanocomposites are fabricated by a chemical method. Monodispersed Fe-oxide nanoparticles are well dispersed in the PMMA matrix by in situ polymerization, resulting in a bulk transparent polymeric nanocomposite. The magnetic behavior of the PMMA/Fe-oxide nanocomposites is investigated. The transparent PMMA/Fe-oxide nanocomposite has potentially interesting magneto-optic applications without compromising the advantages of a lightweight, noncorrosive polymeric material with very high transparency even for bulk samples.

  17. Synthesis and magnetic properties of bulk transparent PMMA/Fe-oxide nanocomposites

    International Nuclear Information System (INIS)

    Li Shanghua; Qin Jian; Fornara, Andrea; Toprak, Muhammet; Muhammed, Mamoun; Kim, Do Kyung

    2009-01-01

    PMMA/Fe-oxide nanocomposites are fabricated by a chemical method. Monodispersed Fe-oxide nanoparticles are well dispersed in the PMMA matrix by in situ polymerization, resulting in a bulk transparent polymeric nanocomposite. The magnetic behavior of the PMMA/Fe-oxide nanocomposites is investigated. The transparent PMMA/Fe-oxide nanocomposite has potentially interesting magneto-optic applications without compromising the advantages of a lightweight, noncorrosive polymeric material with very high transparency even for bulk samples.

  18. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...

  19. Semi-transparent photovoltaic glazing based on electrodeposited CIGS solar cells on patterned molybdenum/glass substrates

    Directory of Open Access Journals (Sweden)

    Sidali Tarik

    2018-01-01

    Full Text Available In this paper, a new way of preparing semi-transparent solar cells using Cu(In1−xGaxSe2 (CIGS chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of Cu-In-Ga mixed oxides on submillimetric hole-patterned molybdenum substrate, followed by thermal reduction to metallic alloys and selenisation. This method has the advantage of being a selective deposition technique where the thin film growth is carried out only on Mo covered areas. Thus, after annealing, the transparency of the sample is always preserved, allowing light to pass through the device. A complete device (5 × 5 cm2 with 535 μm diameter holes and total glass aperture of around 35% shows an open circuit voltage (VOC of 400 mV. Locally, the I-V curves reveal a maximum efficiency of 7.7%, VOC of 460 mV, JSC of 24 mA.cm−2 in an area of 0.1 cm2 with 35% aperture. This efficiency on the semi-transparent area is equivalent to a record efficiency of 11.9% by taking into account only the effective area.

  20. Semi-transparent photovoltaic glazing based on electrodeposited CIGS solar cells on patterned molybdenum/glass substrates

    Science.gov (United States)

    Sidali, Tarik; Bou, Adrien; Coutancier, Damien; Chassaing, Elisabeth; Theys, Bertrand; Barakel, Damien; Garuz, Richard; Thoulon, Pierre-Yves; Lincot, Daniel

    2018-03-01

    In this paper, a new way of preparing semi-transparent solar cells using Cu(In1-xGax)Se2 (CIGS) chalcopyrite semiconductors as absorbers for BIPV applications is presented. The key to the elaboration process consists in the co-electrodeposition of Cu-In-Ga mixed oxides on submillimetric hole-patterned molybdenum substrate, followed by thermal reduction to metallic alloys and selenisation. This method has the advantage of being a selective deposition technique where the thin film growth is carried out only on Mo covered areas. Thus, after annealing, the transparency of the sample is always preserved, allowing light to pass through the device. A complete device (5 × 5 cm2) with 535 μm diameter holes and total glass aperture of around 35% shows an open circuit voltage (VOC) of 400 mV. Locally, the I-V curves reveal a maximum efficiency of 7.7%, VOC of 460 mV, JSC of 24 mA.cm-2 in an area of 0.1 cm2 with 35% aperture. This efficiency on the semi-transparent area is equivalent to a record efficiency of 11.9% by taking into account only the effective area.

  1. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  2. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  3. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  4. Bilayered Oxide thin films for transparent electrode application

    Science.gov (United States)

    Dutta, Titas; Narayan, Jagdish

    2008-10-01

    Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

  5. Marine aggregates and transparent exopolymeric particles (TEPs) as substrates for the stramenopilan fungi, the thraustochytrids: Roller table experimental approach.

    Digital Repository Service at National Institute of Oceanography (India)

    Damare, V.S.; Raghukumar, S.

    In order to understand the kind of organic substrates utilized by thraustochytrids in the coastal water column, their growth in the presence of Transparent Exopolymeric Substances (TEPS) and aggregates generated in roller table experiments...

  6. Functional oxide thin films by pulsed-laser deposition: ion beam nanostructuring of epitaxial YBa2Cu3O7-d and growth of conductive transparent Zn1-xAlxO on compliant substrates

    International Nuclear Information System (INIS)

    Dosmailov, M.

    2015-01-01

    This doctoral dissertation is composed of two parts. The first part of the work is dedicated to the modification of YBCO film by Masked Ion Beam Structuring (MIBS) and the commensurability effects between flux line lattice and defect lattice caused by ion irradiation. The motivation of this part of the work is to understand better the physics of the vortex matter. The YBCO film was grown on MgO substrate by Pulsed Laser Deposition (PLD) method. PLD is a thin film deposition method where high power pulsed laser beam is employed to ablate the material on the target and to deposit thin film on the substrate. This process occurs in high vacuum or in gas background. The main advantage of MIBS is the direct, non-contact structuring of superconducting devices with a resolution mainly limited by masking technique. MIBS is a parallel process that can be used for patterning large sample areas. It avoids surface degradation. The resolution of the MIBS technique can be 10 nm for a 100 nm thick YBCO film irradiated with 75 keV He+. The YBCO film modified by ion irradiation has higher resistivity by factor of ⁓ 3 at temperature T =290K, and much reduced critical temperature Tc ⁓ 47K and broadened transition [Delta]Tc ⁓ 8K. The YBCO film was irradiated with 75keV He+. The square array of nanodots with diameter 175 nm and lattice constant 300 nm was produced using a Si stencil mask. The nanodots are serving as pinning centers for vortices that arise in the superconducting materials of type II in the presence of the magnetic field. The commensurability effects manifest themselves in pronounced minimum of magnetoresistance and pronounced maximum of the critical current at the matching fields. The entire Jc(B) is described by tentative model. Moreover, a strong hysteresis of magnetoresistance and the critical current density Jc(B) is observed (Cooperation with Prof. Wolfgang Lang, University of Vienna). It is interesting to further investigate the physics of vortex matter. The

  7. Fabrication of single-crystalline plasmonic nanostructures on transparent and flexible amorphous substrates

    Science.gov (United States)

    Mori, Tomohiro; Mori, Takeshi; Tanaka, Yasuhiro; Suzaki, Yoshifumi; Yamaguchi, Kenzo

    2017-02-01

    A new experimental technique is developed for producing a high-performance single-crystalline Ag nanostructure on transparent and flexible amorphous substrates for use in plasmonic sensors and circuit components. This technique is based on the epitaxial growth of Ag on a (001)-oriented single-crystalline NaCl substrate, which is subsequently dissolved in ultrapure water to allow the Ag film to be transferred onto a wide range of different substrates. Focused ion beam milling is then used to create an Ag nanoarray structure consisting of 200 cuboid nanoparticles with a side length of 160 nm and sharp, precise edges. This array exhibits a strong signal and a sharp peak in plasmonic properties and Raman intensity when compared with a polycrystalline Ag nanoarray.

  8. Antireflective conducting nanostructures with an atomic layer deposited an AlZnO layer on a transparent substrate

    International Nuclear Information System (INIS)

    Park, Hyun-Woo; Ji, Seungmuk; Herdini, Diptya Suci; Lim, Hyuneui; Park, Jin-Seong; Chung, Kwun-Bum

    2015-01-01

    Graphical abstract: - Highlights: • We investigated the antireflective conducting nanostructures on a transparent substrate using atomic layer deposited AlZnO films. • The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance. • The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. • The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states. - Abstract: The antireflective conducting nanostructures on a transparent substrate were shown to have enhanced optical and electrical properties via colloidal lithography and atomic layer deposition. The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance, both of which were superior to those of a flat transparent conducting substrate. The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states.

  9. Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

    KAUST Repository

    Paniagua, Sergio A.

    2016-05-26

    Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

  10. Phosphonic Acids for Interfacial Engineering of Transparent Conductive Oxides

    KAUST Repository

    Paniagua, Sergio A.; Giordano, Anthony J.; Smith, O’ Neil L.; Barlow, Stephen; Li, Hong; Armstrong, Neal R.; Pemberton, Jeanne E.; Bredas, Jean-Luc; Ginger, David; Marder, Seth R.

    2016-01-01

    Transparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as electrode materials in organic-semiconductor devices. The properties of the inorganic-organic interface - the offset between the TCO Fermi level and the relevant transport level, the extent to which the organic semiconductor can wet the oxide surface, and the influence of the surface on semiconductor morphology - significantly affect device performance. This review surveys the literature on TCO modification with phosphonic acids (PAs), which has increasingly been used to engineer these interfacial properties. The first part outlines the relevance of TCO surface modification to organic electronics, surveys methods for the synthesis of PAs, discusses the modes by which they can bind to TCO surfaces, and compares PAs to alternative organic surface modifiers. The next section discusses methods of PA monolayer deposition, the kinetics of monolayer formation, and structural evidence regarding molecular orientation on TCOs. The next sections discuss TCO work-function modification using PAs, tuning of TCO surface energy using PAs, and initiation of polymerizations from TCO-tethered PAs. Finally, studies that examine the use of PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared. © 2016 American Chemical Society.

  11. Transparency

    NARCIS (Netherlands)

    Gupta, A.; Mason, M.

    2015-01-01

    Transparency, as information disclosure, is becoming a widely accepted norm and set of practices in global climate governance. Disclosure of climate-related information is mainly seen as a way to monitor and/or reward various actors’ climate mitigation actions, thereby contributing, at least in

  12. Transparency

    Science.gov (United States)

    LaFee, Scott

    2009-01-01

    Citizens now expect access to information, particularly from public institutions like local school districts. They demand input and accountability. Cultural and technological changes, such as the Internet, make it possible for districts to comply. Yet transparency--the easily seen and understood actions of a school district and the thinking behind…

  13. Properties of TiO{sub 2}-based transparent conducting oxides

    Energy Technology Data Exchange (ETDEWEB)

    Hitosugi, Taro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 980-8577 Sendai (Japan); Yamada, Naoomi; Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 213-0012 Kawasaki (Japan); Department of Chemistry, University of Tokyo, 113-0033 Tokyo (Japan)

    2010-07-15

    The development and properties of titanium dioxide (TiO{sub 2})-based transparent conducting oxides (TCO), which exhibit properties comparable to those of In{sub 2-x}Sn{sub x}O{sub 3} (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} exhibited a resistivity ({rho}) of 2.3 x 10{sup -4}{omega} cm and internal transmittance of {proportional_to}95% in the visible light region. Furthermore, we prepared polycrystalline films with {rho} of 6.4 x 10{sup -4}{omega} cm at room temperature on glass substrates by using sputtering. We focus on characteristics unique to TiO{sub 2}-based TCO, such as a high refractive index, high transmittance in infrared, and high stability in reducing atmospheres. Possible applications of TiO{sub 2}-based TCOs, as well as the mechanism of the transparent conducting properties found in this d-electron-based TCO, are discussed in this review. Photograph showing TiO{sub 2}-based TCO on a transparent plastic film. Note that the film appears greenish due to interference in the film originating from its high refractive index. This high refractive index is one of the unique characteristics of TiO{sub 2}-based TCO. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  15. Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

    KAUST Repository

    Bhansali, Unnat Sampatraj

    2012-09-01

    Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

  16. Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodes

    KAUST Repository

    Bhansali, Unnat Sampatraj; Khan, Yasser; Alshareef, Husam N.

    2012-01-01

    Polymer-based flexible ferroelectric capacitors have been fabricated using a transparent conducting oxide (ITO) and a transparent conducting polymer (PEDOT:PSS). It is found that the polarization fatigue performance with transparent oxide electrodes exhibits a significant improvement over the polymer electrodes (20% vs 70% drop in polarization after 10 6 cycles). This result can be explained based on a charge injection model that is controlled by interfacial band-offsets, and subsequent pinning of ferroelectric domain walls by the injected carriers. Furthermore, the coercive field (E c) of devices with our polymer electrodes is nearly 40% lower than reported values with similar polymer electrodes. Surprisingly, this difference was found to be related to the dry etching process used to define the top electrodes, which is reported for the first time by this group. The temperature dependence of relative permittivity of both devices shows a typical first order ferroelectric-to-paraelectric phase transition, but with a reduced Curie temperature compared to reference devices fabricated on Pt. © 2012 Elsevier B.V. All rights reserved.

  17. Structure-Property Relationships in Amorphous Transparent Conducting Oxides

    Science.gov (United States)

    Moffitt, Stephanie Lucille

    Over the last 20 years a new field of amorphous transparent conducting oxides (a-TCOs) has developed. The amorphous nature of these films makes them well suited for large area applications. In addition, a-TCOs can be made at low temperatures and through solution processing methods. These assets provide promising opportunities to improve applications such as solar cells and back-lit displays where traditional crystalline TCOs are used. In addition, it opens the door for new technological applications including the possibility for transparent, flexible electronics. Despite the recent growth in this field, fundamental understanding of the true nature of conductivity and the amorphous structure in this materials system is still progressing. To develop a greater understanding of a-TCOs, structure-property relationships were developed in the a-IGO and a-IZO systems. From the combination of element-specific local structure studies and liquid quench molecular dynamics simulations it is clear that a degree of structure remains in a-TCOs. By understanding this structure, the effect of gallium on thermal stability, carrier concentration and carrier mobility is understood. The source of charge carriers in a-IZO is identified as oxygen vacancies through the application of in situ Brouwer analysis. The continued development of the Brouwer analysis technique for use in amorphous oxides adds to the available methods for studying defects in amorphous systems. Finally, the foundational knowledge gained from the in-depth study of a-IGO was extended to understand the role of combustion processing and pulsed laser deposition as growth methods for transistors based on a-IGO.

  18. Fabrication and characterization of all-polymer, transparent ferroelectric capacitors on flexible substrates

    KAUST Repository

    Khan, Yasser

    2011-12-01

    All-polymer, transparent ferroelectric devices, based on the functional polymer poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)], have been fabricated on flexible substrates. The performance of the all-polymer devices was studied and compared to devices with metal electrodes. Specifically, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) [PEDOT:PSS] and platinum (Pt) electrode effects on the morphology, crystallinity and orientation of P(VDF-TrFE) films were investigated. The devices with PEDOT:PSS electrodes showed similar hysteresis and switching current response compared to Pt electrodes but with tremendously improved fatigue performance. Further, the devices with PEDOT:PSS electrodes showed lower coercive field and better fatigue performance than values reported for other polymer electrodes used with P(VDF-TrFE) on flexible substrates. © 2011 Elsevier B.V. All rights reserved.

  19. Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

    Energy Technology Data Exchange (ETDEWEB)

    Lux, Helge, E-mail: lux@th-wildau.de; Schrader, Sigurd [Technical University of Applied Sciences Wildau, Hochschulring 1, Wildau 15745 (Germany); Siemroth, Peter [Arc Precision GmbH, Schwartzkopffstraße 2, Wildau 15745 (Germany); Sgarlata, Anna [Department of Physics, University of Roma - Tor Vergata, Via della Ricerca Scientifica 1, Roma 00133 (Italy); Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Roma - Tor Vergata, and Italian Interuniversity Consortium on Materials Science and Technology (INSTM), Research Unit Roma Tor Vergata Via del Politecnico 1, Roma 00133 (Italy); Schubert, Markus Andreas [IHP Innovations for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder) 15236 (Germany)

    2015-05-21

    Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 10{sup 3} Ω{sub ◻} whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm{sup 2}. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.

  20. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  1. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  2. Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

    International Nuclear Information System (INIS)

    Zhang, Dezhong; Tang, Yang; Jiang, Fuguo; Han, Zhihua; Chen, Jie

    2016-01-01

    Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

  3. Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dezhong; Tang, Yang, E-mail: tangyang@nicenergy.com; Jiang, Fuguo; Han, Zhihua; Chen, Jie

    2016-04-30

    Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

  4. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsinping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide

  5. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  6. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  7. Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

    Science.gov (United States)

    Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

    2018-05-01

    We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

  8. Ethanedithiol-treated manganese oxide nanoparticles for rapidly responsive and transparent supercapacitors

    Science.gov (United States)

    Ryu, Ilhwan; Kim, Green; Park, Dasom; Yim, Sanggyu

    2015-11-01

    Metal oxide nanoparticles (NPs) provide a large surface area and short diffusion pathways for ions in supercapacitor electrode materials. However, binders and conductive additives used for tight connections with current collectors and improved conductivity hamper these benefits. In this work, we successfully fix manganese oxide (Mn3O4) NPs onto ITO current collectors by a simple 1,2-ethanedithiol (EDT) treatment without using any binders or conductive additives. As compared to the electrode fabricated using binder-mixed Mn3O4 NPs, the EDT-treated electrode shows significantly improved specific capacitance of 403 F g-1 at a scan rate of 10 mV s-1. The EDT-treatment is more effective at higher scan rates. The specific capacitances, 278 F g-1 at 100 mV s-1 and 202 F g-1 at 200 mV s-1, are larger than those reported so far at scan rates ≥100 mV s-1. The deconvolution of capacitive elements indicates that these improved capacitive properties are attributed to large insertion elements of the binder-free NP electrodes. Furthermore, this additive-free electrode is highly transparent and can be easily fabricated by simple spray-coating on various substrates including polymer films, implying that this new method is promising for the fabrication of large-area, transparent and flexible electrodes for next-generation supercapacitors.

  9. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  10. Defects and properties of cadmium oxide based transparent conductors

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2016-05-14

    Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited

  11. Defects and properties of cadmium oxide based transparent conductors

    International Nuclear Information System (INIS)

    Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

    2016-01-01

    Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10 20 /cm 3 and mobility in the range of 40–100 cm 2 /V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O 2 partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10 −4 to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10 21  cm −3 and electron mobility higher than 120 cm 2 /V s can be achieved. Thermal annealing of doped CdO films in N 2 ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of

  12. Fibrous flexible solid-type dye-sensitized solar cells without transparent conducting oxide

    International Nuclear Information System (INIS)

    Fan Xing; Chu Zengze; Chen Lin; Zhang Chao; Wang Fuzhi; Tang Yanwei; Sun Jianliang; Zou Dechun

    2008-01-01

    We have explored a type of all-solid fibrous flexible dye-sensitized solar cells without transparent conducting oxide based on a CuI electrolyte. The working electrode's substrate is a metal wire. Cu wire counterelectrode is twisted with the dye-sensitized and CuI-coated working electrode. The cell's apparent diameter is about 150 μm. The cell's current-voltage output depends little on the incident angle of light. A 4-cm-long fibrous cell's open-circuit voltage and short-circuit current generate 304 mV and 0.032 mA, respectively. The interfacial interaction between the two electrodes has a significant influence on the inner charge transfer of the cell

  13. Transparent conducting films of hierarchically nanostructured polyaniline networks on flexible substrates for high-performance gas sensors.

    Science.gov (United States)

    Bai, Shouli; Sun, Chaozheng; Wan, Pengbo; Wang, Cheng; Luo, Ruixian; Li, Yaping; Liu, Junfeng; Sun, Xiaoming

    2015-01-21

    Transparent chemical gas sensors are assembled from a transparent conducting film of hierarchically nanostructured polyaniline (PANI) networks fabricated on a flexible PET substrate, by coating silver nanowires (Ag NWs) followed by the in situ polymerization of aniline near the sacrificial Ag NW template. The sensor exhibits enhanced gas sensing performance at room temperature in both sensitivity and selectivity to NH3 compared to pure PANI film. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

    Science.gov (United States)

    Wang, Li; Luo, Yu; Feng, Xueming; Pei, Yuechen; Lu, Bingheng; Cheng, Shenggui

    2018-05-01

    In flexible OLEDs (FOLEDs), the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag) anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC) substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP) modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

  15. Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

    Directory of Open Access Journals (Sweden)

    Li Wang

    2018-05-01

    Full Text Available In flexible OLEDs (FOLEDs, the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

  16. Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, M.; Khorrami, G.H. [University of Bojnord, Department of Physics, Faculty of Basic Science, Bojnord (Iran, Islamic Republic of); Kompany, A. [Ferdowsi University of Mashhad, Department of Physics, Mashhad (Iran, Islamic Republic of); Yazdi, S.T. [Payame Noor University (PNU), Department of Physics, Tehran (Iran, Islamic Republic of)

    2017-12-15

    In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V{sub 2}O{sub 5} phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V{sub 2}O{sub 5} phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger. (orig.)

  17. Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

    Science.gov (United States)

    Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

    2017-04-01

    High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

  18. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    International Nuclear Information System (INIS)

    Ding Xingwei; Yan Jinliang; Li Ting; Zhang Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO 2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO 2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO 2 /ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO 2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  19. Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature

    Science.gov (United States)

    Ding, Xingwei; Yan, Jinliang; Li, Ting; Zhang, Liying

    2012-01-01

    Transparent conductive ITO/Cu/ITO films were deposited on PET substrates by magnetron sputtering using three cathodes at room temperature. Effects of the SiO2 buffer layer and thickness of Cu interlayer on the structural, electrical and optical properties of ITO/Cu/ITO films were investigated. The optical transmittance was affected slightly by SiO2 buffer layer, but the electrical properties of ITO/Cu/ITO films were improved. The transmittance and resistivity of the SiO2/ITO/Cu/ITO films decrease as the Cu layer thickness increases. The ITO/Cu/ITO film with 5 nm Cu interlayer deposited on the 40 nm thick SiO2 buffer layer exhibits the sheet resistance of 143 Ω/sq and transmittance of 65% at 550 nm wavelength. The optical and electrical properties of the ITO/Cu/ITO films were mainly dependent on the Cu layer.

  20. Electrostatic spray deposition of highly transparent silver nanowire electrode on flexible substrate.

    Science.gov (United States)

    Kim, Taegeon; Canlier, Ali; Kim, Geun Hong; Choi, Jaeho; Park, Minkyu; Han, Seung Min

    2013-02-01

    In this work, a modified polyol synthesis by adding KBr and by replacing the AgCl with NaCl seed was used to obtain high quality silver nanowires with long aspect ratios with an average length of 13.5 μm in length and 62.5 nm in diameter. The Ag nanowires suspended in methanol solution after removing any unwanted particles using a glass filter system were then deposited on a flexible polycarbonate substrate using an electrostatic spray system. Transmittance of 92.1% at wavelength of 550 nm with sheet resistance of 20 Ω/sq and haze of 4.9% were measured for the electrostatic sprayed Ag nanowire transparent electrode.

  1. Carbon nanotubes length optimization for preparation of improved transparent and conducting thin film substrates

    Directory of Open Access Journals (Sweden)

    Mansoor Farbod

    2017-03-01

    Full Text Available Transparent and conductive thin films of multiwalled carbon nanotubes (MWCNTs with different lengths were prepared on glass substrates by the spin coating method. In order to reduce the MWCNTs length, they were functionalized. The initial length of MWCNTs (10–15 μm was reduced to 1200, 205 and 168 nm after 30, 60 and 120 min refluxing time, respectively. After post annealing at 285 °C for 24 h, the electrical and optical properties were greatly improved for functionalized MWCNT thin films. They strongly depend on the length of CNTs. The optical transmittance of the film prepared using 30 min reflux CNTs was 2.6% and 6.6% higher than that of the 60 min and 120 min refluxed samples respectively. The sheet resistance of this film showed reductions of 45% and 80% as well. The film also exhibited the least roughness. The percolative figure of merit, which is proportional to the transparency and disproportional to the sheet resistance, was found to be higher for the sample with 30 min refluxed MWCNTs.

  2. High Transparent Metal Oxide / Polyimide Antistatic Coatings, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Through this Phase I program, Agiltron has successfully produced an innovative transparent conductive nanocomposite paint that holds the promise of meeting space...

  3. Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj; Kim, Joondong, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 406772 (Korea, Republic of); Sohn, Ahrum; Kim, Dong-Wook, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Department of Physics, Ewha Womans University, Seoul 120750 (Korea, Republic of)

    2016-09-05

    Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

  4. Patterned transparent zinc oxide films produced by sol-gel embossing

    Energy Technology Data Exchange (ETDEWEB)

    Rao, J.; Koh, L.H.K.; Crean, G.M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Department of Microelectronic Engineering, University College Cork, Cork (Ireland); O' Brien, S. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Winfield, R.J.

    2008-08-15

    A low cost zinc oxide embossing technique is reported as a method of fabricating structures relevant to a variety of applications. A zinc based sol-gel material was prepared from zinc acetate[Zn(C{sub 2}H{sub 3}O{sub 2}){sub 2}], monoethanolamine[H{sub 2}NC{sub 2}H{sub 4}OH] and isopropanol. The sol-gel was cast into a polydimethylsiloxane (PDMS) mould a track design, placed in contact with the substrate and dried under vacuum at 70 C for 3 hours. The formed track pattern was further densified to provide a stable conductor film that retained the embossed shape. An optimum Zn sol-gel content of 0.6 M was identified. The embossed films had a transparency of greater than 83% in the visible region. The optical bandgap energy was evaluated to be 3.306 eV. The influence of ZnO sol-gel film synthesis and embossing parameters on the microstructure, morphology and optical transparency of fabricated structures is described. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Laser-Direct Writing of Silver Metal Electrodes on Transparent Flexible Substrates with High-Bonding Strength.

    Science.gov (United States)

    Zhou, Weiping; Bai, Shi; Ma, Ying; Ma, Delong; Hou, Tingxiu; Shi, Xiaomin; Hu, Anming

    2016-09-21

    We demonstrate a novel approach to rapidly fabricate conductive silver electrodes on transparent flexible substrates with high-bonding strength by laser-direct writing. A new type of silver ink composed of silver nitrate, sodium citrate, and polyvinylpyrrolidone (PVP) was prepared in this work. The role of PVP was elucidated for improving the quality of silver electrodes. Silver nanoparticles and sintered microstructures were simultaneously synthesized and patterned on a substrate using a focused 405 nm continuous wave laser. The writing was completed through the transparent flexible substrate with a programmed 2D scanning sample stage. Silver electrodes fabricated by this approach exhibit a remarkable bonding strength, which can withstand an adhesive tape test at least 50 times. After a 1500 time bending test, the resistance only increased 5.2%. With laser-induced in-situ synthesis, sintering, and simultaneous patterning of silver nanoparticles, this technology is promising for the facile fabrication of conducting electronic devices on flexible substrates.

  6. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  7. Transparent conductive oxides and alternative transparent electrodes for organic photovoltaics and OLEDs; Transparente leitfaehige Elektroden. Oxide und alternative Materialien fuer die organische Photovoltaik und OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Mueller-Meskamp, Lars; Sachse, Christoph; Kim, Yong Hyun; Furno, Mauro [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); May, Christian [Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany); Leo, Karl [Technische Univ. Dresden (DE). Inst. fuer Angewandte Photophysik (IAPP); Fraunhofer Institut fuer Photonische Mikrosysteme (IPMS), Dresden (Germany)

    2012-08-15

    Organic, photoactive devices, such as OLEDs or organic solar cells, currently use indium tin oxide (ITO) as transparent electrode. Whereas ITO is industry-proven for many years and shows very good electrical and optical properties, its application for low-cost and flexible devices might not be optimal. For such applications innovative technologies such as network-based metal nanowire or carbon nanotube electrodes, graphene, conductive polymers, metal thin-films and alternative transparent conductive oxides emerge. Although some of these technologies are rather experimental and far from application, some of them have the potential to replace ITO in selected applications. (orig.)

  8. Ultra-fast transient plasmonics using transparent conductive oxides

    Science.gov (United States)

    Ferrera, Marcello; Carnemolla, Enrico G.

    2018-02-01

    During the last decade, plasmonic- and metamaterial-based applications have revolutionized the field of integrated photonics by allowing for deep subwavelength confinement and full control over the effective permittivity and permeability of the optical environment. However, despite the numerous remarkable proofs of principle that have been experimentally demonstrated, few key issues remain preventing a widespread of nanophotonic technologies. Among these fundamental limitations, we remind the large ohmic losses, incompatibility with semiconductor industry standards, and largely reduced dynamic tunability of the optical properties. In this article, in the larger context of the new emerging field of all-dielectric nanophotonics, we present our recent progresses towards the study of large optical nonlinearities in transparent conducting oxides (TCOs) also giving a general overview of the most relevant and recent experimental attainments using TCO-based technology. However, it is important to underline that the present article does not represent a review paper but rather an original work with a broad introduction. Our work lays in a sort of ‘hybrid’ zone in the middle between high index contrast systems, whose behaviour is well described by applying Mie scattering theory, and standard plasmonic elements where optical modes originate from the electromagnetic coupling with the electronic plasma at the metal-to-dielectric interface. Beside remaining in the context of plasmonic technologies and retaining all the fundamental peculiarities that promoted the success of plasmonics in the first place, our strategy has the additional advantage to allow for large and ultra-fast tunability of the effective complex refractive index by accessing the index-near-zero regime in bulk materials at telecom wavelength.

  9. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    International Nuclear Information System (INIS)

    Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

    2013-01-01

    Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

  10. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  11. ZnO based transparent conductive oxide films with controlled type of conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

    2014-11-28

    The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

  12. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  13. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  14. Use of organosilicate precursors for transparent coatings on organic substrates by plasma CVD

    International Nuclear Information System (INIS)

    Lasorsa, C; Versaci, R; Perillo, P

    2006-01-01

    This work discusses the production of transparent coatings of SiOxCy on substrates polycarbonated by PECVD at temperatures below 80 o C, with a gaseous mixture using different precursors with which, in similar processes produced the same results with respect to the coating obtained, with the same excellent quality and in accordance with international standards for optic coatings. Chlorinated precursors were excluded because they are highly corrosive as well as those with operating risks (toxic or explosive). The precursors used were tetraethyl orthosilicate (TEOS), tetramethylsilanete (TMS,) tetramethoxy silane (TMOS), hexamethyldisilizane (HMDS), and methyltrimethoxysilane (Z6070), with the contribution of O 2 and methane as reactive gases. Fourier transform infrared spectroscopy (FTIR) was used as well as X-ray generated photoelectron spectroscopy (XPS/ESCA). The functional groups were studied together with the film elements and its mechanical properties, transparency and refraction index. Irregardless of the precursor used, by properly modifying the process variables (pressure of the gaseous mixture, radio frequency power, relationship of processing gases and their flow), similar coatings can be chemically obtained, having the same morphology and, therefore, with identical adherence, structural and optic properties. None of the works consulted refer to the possibility of the indistinct use of different precursors for obtaining the same coating. These results are relevant when considering the difference in costs and their market availability. The influence of the addition of methane was studied in two processing variants, a) with oxygen and methane and b) with oxygen alone. For all the precursors used and with identical processing conditions, the carbon contributed by the addition of methane increased the concentration of carbon compounds, considerably reducing the presence of silanol, which being absorbent produces structural instability and cracking of the

  15. Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates

    International Nuclear Information System (INIS)

    Lee, Chi-Yuan; Chang, Chienliu; Shih, Wen-Pin; Dai, Ching-Liang

    2010-01-01

    The wet etch process for amorphous indium gallium zinc oxide (a-IGZO or a-InGaZnO) by using various etchants is reported. The etch rates of a-IGZO, compared to another indium-based oxides including indium gallium oxide (IGO), indium zinc oxide (IZO), and indium tin oxide (ITO), are measured by using acetic acid, citric acid, hydrochloric acid, perchloric acid, and aqua ammonia as etchants, respectively. In our experimental results, the etch rate of the transparent oxide semiconductor (TOS) films by using acid solutions ranked accordingly from high to low are IZO, IGZO, IGO and ITO. Comparatively, the etch rate of the TOS films by using alkaline ammonia solution ranked from high to low are IGZO, IZO, IGO and ITO, in that order. Using the proposed wet etching process with high etch selectivity, bottom-gate-type thin-film transistors (TFTs) based on a-IGZO channels and Y 2 O 3 gate-insulators were fabricated by radio-frequency sputtering on plastic substrates. The wet etch processed TFT with 30 μm gate length and 120 μm gate width exhibits a saturation mobility of 46.25 cm 2 V -1 s -1 , a threshold voltage of 1.3 V, a drain current on-off ratio > 10 6 , and subthreshold gate voltage swing of 0.29 V decade -1 . The performance of the TFTs ensures the applicability of the wet etching process for IGZO to electronic devices on organic polymer substrates.

  16. Semi-transparent ordered TiO{sub 2} nanostructures prepared by anodization of titanium thin films deposited onto the FTO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Szkoda, Mariusz, E-mail: mariusz-szkoda@wp.pl [Department of Chemistry and Technology of Functional Materials, Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk 80-233 (Poland); Lisowska-Oleksiak, Anna [Department of Chemistry and Technology of Functional Materials, Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk 80-233 (Poland); Grochowska, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Science, Fiszera 14, 80-231 Gdańsk (Poland); Skowroński, Łukasz [Institute of Mathematics and Physics, UTP University of Science and Technology, Kaliskiego 7, 85-796 Bydgoszcz (Poland); Karczewski, Jakub [Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12, 80-233 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Science, Fiszera 14, 80-231 Gdańsk (Poland)

    2016-09-15

    Highlights: • High quality titanium coatings were doposited using industrial magnetron sputtering equipment. • Semi-transparent TiO{sub 2} were prepared via anodization realized in various conditions. • Depending on electrolyte type, ordered tubular or porous TiO{sub 2} layers were obtained. • Prepared material can act as semiconducting layer in photovoltaic cells. - Abstract: In a significant amount of cases, the highly ordered TiO{sub 2} nanotube arrays grow through anodic oxidation of a titanium metal plate immersed in electrolyte containing fluoride ions. However, for some practical applications, e.g. solar cells or electrochromic windows, the semi-transparent TiO{sub 2} formed directly on the transparent, conductive substrate is very much desired. This work shows that high-quality Ti coating could be formed at room temperature using an industrial magnetron sputtering system within 50 min. Under optimized conditions, the anodization process was performed on 2 μm titanium films deposited onto the FTO (fluorine-tin-oxide) support. Depending on the electrolyte type, highly ordered tubular or porous titania layers were obtained. The fabricated samples, after their thermal annealing, were investigated using scanning electron microscopy, Raman spectroscopy and UV–vis spectroscopy in order to investigate their morphology, crystallinity and absorbance ability. The photocurrent response curves indicate that materials are resistant to the photocorrosion process and their activity is strongly connected to optical properties. The most transparent TiO{sub 2} films were fabricated when Ti was anodized in water electrolyte, whereas the highest photocurrent densities (12 μA cm{sup −2}) were registered for titania received after Ti anodization in ethylene glycol solution. The obtained results are of significant importance in the production of thin, semi-transparent titania nanostructures on a commercial scale.

  17. Semi-transparent ordered TiO_2 nanostructures prepared by anodization of titanium thin films deposited onto the FTO substrate

    International Nuclear Information System (INIS)

    Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Skowroński, Łukasz; Karczewski, Jakub; Siuzdak, Katarzyna

    2016-01-01

    Highlights: • High quality titanium coatings were doposited using industrial magnetron sputtering equipment. • Semi-transparent TiO_2 were prepared via anodization realized in various conditions. • Depending on electrolyte type, ordered tubular or porous TiO_2 layers were obtained. • Prepared material can act as semiconducting layer in photovoltaic cells. - Abstract: In a significant amount of cases, the highly ordered TiO_2 nanotube arrays grow through anodic oxidation of a titanium metal plate immersed in electrolyte containing fluoride ions. However, for some practical applications, e.g. solar cells or electrochromic windows, the semi-transparent TiO_2 formed directly on the transparent, conductive substrate is very much desired. This work shows that high-quality Ti coating could be formed at room temperature using an industrial magnetron sputtering system within 50 min. Under optimized conditions, the anodization process was performed on 2 μm titanium films deposited onto the FTO (fluorine-tin-oxide) support. Depending on the electrolyte type, highly ordered tubular or porous titania layers were obtained. The fabricated samples, after their thermal annealing, were investigated using scanning electron microscopy, Raman spectroscopy and UV–vis spectroscopy in order to investigate their morphology, crystallinity and absorbance ability. The photocurrent response curves indicate that materials are resistant to the photocorrosion process and their activity is strongly connected to optical properties. The most transparent TiO_2 films were fabricated when Ti was anodized in water electrolyte, whereas the highest photocurrent densities (12 μA cm"−"2) were registered for titania received after Ti anodization in ethylene glycol solution. The obtained results are of significant importance in the production of thin, semi-transparent titania nanostructures on a commercial scale.

  18. Fabrication of gold nanodot arrays on a transparent substrate as a nanobioplatform for label-free visualization of living cells

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Mi; El-Said, Waleed Ahmed; Choi, Jeong-Woo, E-mail: jwchoi@sogang.ac.kr [Interdisciplinary Program of Integrated Biotechnology, Sogang University, Seoul 121-742 (Korea, Republic of)

    2011-06-10

    Two-dimensional gold (Au) nanodot arrays on a transparent substrate were fabricated for imaging of living cells. A nanoporous alumina mask with large-area coverage capability was prepared by a two-step chemical wet etching process after a second anodization. Highly ordered Au nanodot arrays were formed on indium-tin-oxide (ITO) glass using very thin nanoporous alumina of approximately 200 nm thickness as an evaporation mask. The large-area Au nanodot arrays on ITO glass were modified with RGD peptide (arginine; glycine; aspartic acid) containing a cysteine (Cys) residue and then used to immobilize human cancer HeLa cells, the morphology of which was observed by confocal microscopy. The confocal micrographs of living HeLa cells on Au nanodot arrays revealed enhanced contrast and resolution, which enabled discernment of cytoplasmic organelles more clearly. These results suggest that two-dimensional Au nanodot arrays modified with RGD peptide on ITO glass have potential as a biocompatible nanobioplatform for the label-free visualization and adhesion of living cells.

  19. Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices.

    Science.gov (United States)

    Ke, Shanming; Chen, Chang; Fu, Nianqing; Zhou, Hua; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao

    2016-10-26

    Sn-doped In 2 O 3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (solar cells (PSCs) with high efficiency.

  20. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

    Science.gov (United States)

    D'Arcy, Julio M.; Tran, Henry D.; Stieg, Adam Z.; Gimzewski, James K.; Kaner, Richard B.

    2012-05-01

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated. Electronic supplementary information (ESI) available: Droplet coalescence, catenoid formation, mechanism of film growth, scanning electron micrographs showing carbon nanotube alignment, flexible transparent films of SWCNTs, AFM images of a chemically converted graphene film, and SEM images of SWCNT free-standing thin films. See DOI: 10.1039/c2nr00010e

  1. Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

    International Nuclear Information System (INIS)

    Kasai, J.; Nakao, S.; Yamada, N.; Hitosugi, T.; Moriyama, M.; Goshonoo, K.; Hoang, N. L. H.; Hasegawa, T.

    2010-01-01

    Anatase Nb-doped TiO 2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 deg. C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8x10 -4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO 2 was well matched to that of GaN. These findings indicate that Nb-doped TiO 2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

  2. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  3. Properties of transparent and conductive Al:ZnO/Au/Al:ZnO multilayers on flexible PET substrates

    International Nuclear Information System (INIS)

    Dimopoulos, T.; Bauch, M.; Wibowo, R.A.; Bansal, N.; Hamid, R.; Auer, M.; Jäger, M.; List-Kratochvil, E.J.W.

    2015-01-01

    Highlights: • Transparent, low resistive AZO/Au/AZO layers were sputtered on PET substrates. • AZO/Au/AZO has higher figure of merit than ITO for specific Au thicknesses. • The resistance of AZO/Au/AZO is stable against repetitive substrate bending. • AZO/Au/AZO electrode performance is comparable to ITO in light emitting diodes. - Abstract: We investigate the structural, electrical and optical properties of transparent electrodes, consisting of Al-doped ZnO (AZO) and ultrathin Au layers, sputtered on polyethylene terephthalate (PET). These electrodes are relevant for optoelectronic devices and thin film photovoltaics. When deposited on AZO, Au films as thin as 3 nm form electrically conductive, meandering structures, whereas uniform Au films are obtained from a thickness of 5 nm. The sheet resistance decreases with Au thickness, reaching 7 Ω for 11 nm-thick Au. AZO/Au/AZO trilayers combine lowest resistance with highest transparency, while their resistance stability against bending fatigue is superior to the Sn-doped In 2 O 3 (ITO) electrode. The figure of merit of AZO/Au/AZO is larger than of ITO for Au thickness equal to or larger than 9 nm. To demonstrate the applicability of the AZO/Au/AZO transparent electrode, simple organic light emitting diodes were fabricated and tested in comparison to PET/ITO standard substrates

  4. Properties of transparent and conductive Al:ZnO/Au/Al:ZnO multilayers on flexible PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dimopoulos, T., E-mail: theodoros.dimopoulos@ait.ac.at [AIT-Austrian Institute of Technology, Energy Department, Photovoltaic Systems, Giefinggasse 2, 1210, Vienna (Austria); Bauch, M.; Wibowo, R.A.; Bansal, N. [AIT-Austrian Institute of Technology, Energy Department, Photovoltaic Systems, Giefinggasse 2, 1210, Vienna (Austria); Hamid, R. [AIT-Austrian Institute of Technology, Mobility Department, Electric Drive Technologies, Giefinggasse 2, 1210, Vienna (Austria); Auer, M.; Jäger, M. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); List-Kratochvil, E.J.W. [NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz (Austria); Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz (Austria)

    2015-10-15

    Highlights: • Transparent, low resistive AZO/Au/AZO layers were sputtered on PET substrates. • AZO/Au/AZO has higher figure of merit than ITO for specific Au thicknesses. • The resistance of AZO/Au/AZO is stable against repetitive substrate bending. • AZO/Au/AZO electrode performance is comparable to ITO in light emitting diodes. - Abstract: We investigate the structural, electrical and optical properties of transparent electrodes, consisting of Al-doped ZnO (AZO) and ultrathin Au layers, sputtered on polyethylene terephthalate (PET). These electrodes are relevant for optoelectronic devices and thin film photovoltaics. When deposited on AZO, Au films as thin as 3 nm form electrically conductive, meandering structures, whereas uniform Au films are obtained from a thickness of 5 nm. The sheet resistance decreases with Au thickness, reaching 7 Ω for 11 nm-thick Au. AZO/Au/AZO trilayers combine lowest resistance with highest transparency, while their resistance stability against bending fatigue is superior to the Sn-doped In{sub 2}O{sub 3} (ITO) electrode. The figure of merit of AZO/Au/AZO is larger than of ITO for Au thickness equal to or larger than 9 nm. To demonstrate the applicability of the AZO/Au/AZO transparent electrode, simple organic light emitting diodes were fabricated and tested in comparison to PET/ITO standard substrates.

  5. Transparent and flexible cellulose nanocrystal/reduced graphene oxide film for proximity sensing.

    Science.gov (United States)

    Sadasivuni, Kishor Kumar; Kafy, Abdullahil; Zhai, Lindong; Ko, Hyun-U; Mun, Seongcheol; Kim, Jaehwan

    2015-02-25

    The rapid development of touch screens as well as photoelectric sensors has stimulated the fabrication of reliable, convenient, and human-friendly devices. Other than sensors that detect physical touch or are based on pressure sensing, proximity sensors offer controlled sensibility without physical contact. In this work we present a transparent and eco-friendly sensor made through layer-by-layer spraying of modified graphene oxide filled cellulose nanocrystals on lithographic patterns of interdigitated electrodes on polymer substrates, which help to realize the precise location of approaching objects. Stable and reproducible signals generated by keeping the finger in close proximity to the sensor can be controlled by humidity, temperature, and the distance and number of sprayed layers. The chemical modification and reduction of the graphene oxide/cellulose crystal composite and its excellent nanostructure enable the development of proximity sensors with faster response and higher sensitivity, the integration of which resolves nearly all of the technological issues imposed on optoelectronic sensing devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Fabrication of transparent superhydrophobic silica-based film on a glass substrate

    Science.gov (United States)

    Wang, Shing-Dar; Luo, Shih-Shiang

    2012-05-01

    Tetraethoxysilane (TEOS) was hydrolyzed in an acidic environment and then reacted with hexamethyldisilazane (HMDS) to obtain a superhydrophobic transparent film on a glass substrate. The molar ratios of water and ethanol to TEOS, the pH value of the acidic (or basic) water that is used to hydrolyze TEOS, the heat treatment conditions and other factors were investigated systematically to optimize the transmission through, and the contact angle of water on the film. HMDS (total amount of HMDS/TEOS = 2) was divided into 20 parts, which were added into the sol successively to prevent the sudden production of a large quantity of NH3 in a small area of the sol. The optical and hydrophobic properties of the sol gel continued to change after it had been prepared. The conditions that TEOS was hydrolyzed with acidic water at pH 1.2 at 70 °C and the sol gel was aged at 20 °C for 48 h realized transmission of 90.9% and a water contact angle of 154.3°. No additional surface chemistry modification was needed.

  7. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  8. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  9. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    International Nuclear Information System (INIS)

    Singh, Hemant Kr.; Avasthi, D.K.; Aggarwal, Shruti

    2015-01-01

    Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO 2 :F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In 2 O 3 :Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag +9 ions at fluences ranging from 3.0 × 10 11 ions/cm 2 to 3.0 × 10 13 ions/cm 2 . The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications

  10. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Hemant Kr. [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India); Avasthi, D.K. [Inter University Accelerator Center, Post Box 10502, New Delhi (India); Aggarwal, Shruti, E-mail: shruti.al@gmail.com [University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi (India)

    2015-06-15

    Highlights: •The objective is to study the effect of swift heavy ion (SHI) irradiation on photoanode of DSSC for better efficiency. •This work presents the effect of SHI irradiation on various Transparent conducting oxides (TCOs). •Effects are studied in terms of conductivity and transmittance of TCOs. •ITO-PET gives best results in comparison to ITO and FTO for DSSC application under SHI irradiation. -- Abstract: Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO{sub 2}:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In{sub 2}O{sub 3}:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag{sup +9} ions at fluences ranging from 3.0 × 10{sup 11} ions/cm{sup 2} to 3.0 × 10{sup 13} ions/cm{sup 2}. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

  11. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  12. Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

    Science.gov (United States)

    Jeon, Sanghun; Song, Ihun; Lee, Sungsik; Ryu, Byungki; Ahn, Seung-Eon; Lee, Eunha; Kim, Young; Nathan, Arokia; Robertson, John; Chung, U-In

    2014-11-05

    A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu; Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2017-01-01

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize

  14. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    International Nuclear Information System (INIS)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-01-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10 −5 Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10 −3 Ω −1 , comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs

  15. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  16. Microbubble-Triggered Spontaneous Separation of Transparent Thin Films from Substrates Using Evaporable Core-Shell Nanocapsules.

    Science.gov (United States)

    Son, Intae; Lee, Byungsun; Kim, Jae Hong; Kim, Chunho; Yoo, Ji Yong; Ahn, Byung Wook; Hwang, Jeongho; Lee, Jonghyuk; Lee, Jun Hyup

    2018-05-23

    The spontaneous separation of a polymer thin film from a substrate is an innovative technology that will enable material recycling and reduce manufacturing cost in the film industry, and this can be applied in a wide range of applications, from optical films to wearable devices. Here, we present an unprecedented spontaneous strategy for separating transparent polymer films from substrates on the basis of microbubble generation using nanocapsules containing an evaporable material. The core-shell nanocapsules are prepared from poly(methyl methacrylate)-polyethyleneimine nanoparticles via the encapsulation of methylcyclohexane (MCH). A spherical nanostructure with a vaporizable core is obtained, with the heat-triggered gas release ability leading to the formation of microbubbles. Our separation method applied to transparent polymer films doped with a small amount of the nanocapsules encapsulating evaporable MCH enables spontaneous detachment of thin films from substrates via vacuum-assisted rapid vaporization of MCH over a short separation time, and clear detachment of the film is achieved with no deterioration of the inherent optical transparency and adhesive property compared to a pristine film.

  17. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  18. Effect of swift heavy ion (SHI) irradiation on transparent conducting oxide electrodes for dye-sensitized solar cell applications

    Science.gov (United States)

    Singh, Hemant Kr.; Avasthi, D. K.; Aggarwal, Shruti

    2015-06-01

    Transparent conducting oxides (TCOs) are used as electrodes in dye-sensitized solar cells (DSSCs) because of their properties such as high transmittance and low resistivity. In the present work, the effects of swift heavy ion (SHI) irradiation on various types of TCOs are presented. The objective of this study is to investigate the effect of SHI on TCOs. For the present study, three different types of TCOs are considered, namely, (a) FTO (fluorine-doped tin oxide, SnO2:F) on a Nippon glass substrate, (b) ITO (indium tin oxide, In2O3:Sn) coated on polyethylene terephthalate (PET) on a Corning glass substrate, and (c) ITO on a Corning glass substrate. These films are irradiated with 120 MeV Ag+9 ions at fluences ranging from 3.0 × 1011 ions/cm2 to 3.0 × 1013 ions/cm2. The structural, morphological, optical and electrical properties are studied via X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis absorption spectroscopy and four-probe resistivity measurements, respectively. The ITO-PET electrode is found to exhibit superior conductivity and transmittance properties in comparison with the others after irradiation and, therefore, to be the most suitable for solar cell applications.

  19. Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

    Energy Technology Data Exchange (ETDEWEB)

    Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

    2016-05-05

    This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

  20. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  1. MoOx modified ZnGaO based transparent conducting oxides

    Science.gov (United States)

    Dutta, Titas; Gupta, P.; Bhosle, V.; Narayan, J.

    2009-03-01

    We report here the growth of high work function bilayered structures of thin MoOx (2.0MoOx layer, molybdenum exists in Mo4+, Mo5+, and Mo6+ oxidation states, and the ratio of (Mo4++Mo5+) to Mo6+ was determined to be ˜2:1. The bilayer films showed good optical transparency (≥80%) and low resistivity of ˜10-4 Ω cm. Different transport behavior of the MoOx/ZnGa0.05O films grown at different Ts (substrate temperature) was observed in temperature-dependent resistivity measurements. The bilayer film at higher Ts showed metallic conductivity behavior down to 113 K. Moreover, a blueshift of the absorption edge in the transmission spectrum was observed with the increase in Ts, indicating an increase in the carrier concentration. It was observed that the ZnGa0.05O films with ultrathin MoOx (˜1-2 nanometers) overlayer showed a higher work function (varying from 4.7 to 5.1 eV) as compared to the single layer ZnGa0.05O film work function (˜4.4 eV). A correlation between the surface work function and MoOx layer thickness is observed. The higher work function of the MoOx overlayer is envisaged to improve the transport of the carriers across the heterojunction in a solid state device, thus resulting an increase in device efficiency.

  2. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu

    2017-09-08

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large-area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band-offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible-range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.

  3. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    Science.gov (United States)

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  4. Substrate overload: Glucose oxidation in human myotubes conquers palmitate oxidation through anaplerosis

    DEFF Research Database (Denmark)

    Gaster, Michael

    2009-01-01

    of citrate was increased which could be abolished by phenylacetic acid (inhibitor of pyruvate carboxylase (PC)). The present data challenges above preconceptions. Although they operate at low-moderate substrate levels additional two principles determine substrate oxidation at higher substrate concentrations...

  5. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... The estimated direct optical band gap energy (Ed g) values were found to ... rpm substrate rotation and power of 150 W. The rate of deposition was 2 .... tion by annealing is due to the generation of oxygen vacancies due to ...

  6. Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

    International Nuclear Information System (INIS)

    Hitosugi, T.; Ueda, A.; Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We report on transparent conducting properties of anatase Ti 0.94 Nb 0.06 O 2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H 2 -annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10 -4 Ω cm and 1.5 x 10 -3 Ω cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films

  7. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  8. Comparing the fundamental physics and device performance of transparent, conductive nanostructured networks with conventional transparent conducting oxides

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, Teresa M.; Reese, Matthew O.; Bergeson, Jeremy D.; Larsen, Brian A.; Blackburn, Jeffrey L.; Beard, Matthew C.; Bult, Justin; Van de Lagemaat, Jao [NREL, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2012-03-15

    Networks made of single-walled carbon nanotubes (SWNTs) and metallic nanowire networks, graphene, and ultra-thin metal films have all been proposed as replacements for transparent conducting oxides (TCOs) in photovoltaic and other applications. However, only limited comparisons of nanostructured networks and TCOs are available. Several common figures of merit that are often used to compare the electrical and optical performance of the transparent contacts are evaluated here, and the merits of each method of comparison are discussed. Calculating the current loss due to absorption in the TCO is the most useful metric for evaluating new materials for use in solar cells with well-defined sheet resistance requirements and known quantum efficiencies. The 'Haacke' figure of merit, {phi}{sub H}, correlates fairly well with current loss and is a good metric for evaluating electro-optical performance for more general applications. The analyses presented here demonstrate that silver nanowire networks are much closer to achieving optimal electrical and optical properties than carbon-based networks. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  10. Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

    Science.gov (United States)

    Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

  11. Pentacene ohmic contact on the transparent conductive oxide films

    International Nuclear Information System (INIS)

    Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

    2010-01-01

    Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

  12. Effect of high-energy electron beam irradiation on the transmittance of ZnO thin films on transparent substrates

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Han, Young-Hwan; Kim, Min-Wan; Lee, Byung Cheol

    2010-01-01

    We investigated in this study the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of undoped ZnO films grown on transparent substrates, such as corning glass and polyethersulfone (PES) plastic substrates, with a radio frequency (rf) magnetron sputtering technique. The ZnO thin films were treated with HEEBI in air at RT with an electron beam energy of 1 MeV and doses of 4.7 x 10 14 - 4.7 x 10 16 electrons/cm 2 . The optical transmittance of the ZnO films was measured using an ultraviolet visible near-infrared spectrophotometer. The detailed estimation process for separating the transmittance of HEEBI-treated ZnO films from the total transmittance of ZnO films on transparent substrates treated with HEEBI is given in this paper. We concluded that HEEBI causes a slight suppression in the optical transmittance of ZnO thin films. We also concluded that HEEBI treatment with a high dose shifted the optical band gap (E g ) toward the lower energy region from 3.29 to 3.28 eV whereas that with a low dose unchanged E g at 3.25 eV. This shift suggested that HEEBI at RT at a high dose acts like an annealing treatment at high temperature.

  13. Influence of the ``second gap'' on the optical absorption of transparent conducting oxides

    Science.gov (United States)

    Ha, Viet-Anh; Waroquiers, David; Rignanese, Gian-Marco; Hautier, Geoffroy

    Transparent conducting oxides (TCOs) are critical to many technologies (e.g., thin-film solar cells, flat-panel displays or organic light-emitting diodes). TCOs are heavily doped (n or p-type) oxides that satisfy many design criteria such as high transparency to visible light (i.e., a band gap > 3 eV), high concentration and mobility of carriers (leading to high conductivity), ... In such (highly doped) systems, optical transitions from the conduction band minimum to higher energy bands in n-type or from lower energy bands to the valence band maximum in p-type are possible and can degrade transparency. In fact, it has been claimed that a high energy (> 3eV) for any of these transitions made possible by doping, commonly referred as a high ``second gap'', is a necessary design criterion for high performance TCOs. Here, we study the influence of this second gap on the transparency of doped TCOs by using ab initio calculations within the random phase approximation (RPA) for several well-known p-type and n-type TCOs. Our work highlights how the second gap affects the transparency of doped TCOs, shining light on more accurate design criteria for high performance TCOs.

  14. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  15. Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode

    International Nuclear Information System (INIS)

    Chung, Choong-Heui; Ko, Young-Wook; Kim, Yong-Hae; Sohn, Choong-Yong; Hye Yong Chu; Ko Park, Sang-Hee; Lee, Jin Ho

    2005-01-01

    Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 x 10 -4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m 2 was obtained. The device performance was comparable to a conventional OLED

  16. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

    Directory of Open Access Journals (Sweden)

    Diana E. Proffit

    2010-11-01

    Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

  17. Low Reflectivity and High Flexibility of Tin-Doped Indium Oxide Nanofiber Transparent Electrodes

    KAUST Repository

    Wu, Hui

    2011-01-12

    Tin-doped indium oxide (ITO) has found widespread use in solar cells, displays, and touch screens as a transparent electrode; however, two major problems with ITO remain: high reflectivity (up to 10%) and insufficient flexibility. Together, these problems severely limit the applications of ITO films for future optoelectronic devices. In this communication, we report the fabrication of ITO nanofiber network transparent electrodes. The nanofiber networks show optical reflectivity as low as 5% and high flexibility; the nanofiber networks can be bent to a radius of 2 mm with negligible changes in the sheet resistance. © 2010 American Chemical Society.

  18. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  19. Enhancing light out-coupling of organic light-emitting devices using indium tin oxide-free low-index transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yi-Hsiang; Lu, Chun-Yang; Tsai, Shang-Ta; Tsai, Yu-Tang; Chen, Chien-Yu; Tsai, Wei-Lung; Lin, Chun-Yu; Chang, Hong-Wei; Lee, Wei-Kai; Jiao, Min; Wu, Chung-Chih, E-mail: wucc@ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Electronics Engineering, and Innovative Photonics Advanced Research Center (i-PARC), National Taiwan University, Taipei 10617, Taiwan (China)

    2014-05-05

    With its increasing and sufficient conductivity, the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been capable of replacing the widely used but less cost-effective indium tin oxides (ITOs) as alternative transparent electrodes for organic light-emitting devices (OLEDs). Intriguingly, PEDOT:PSS also possesses an optical refractive index significantly lower than those of ITO and typical organic layers in OLEDs and well matching those of typical OLED substrates. Optical simulation reveals that by replacing ITO with such a low-index transparent electrode, the guided modes trapped within the organic/ITO layers in conventional OLEDs can be substantially suppressed, leading to more light coupled into the substrate than the conventional ITO device. By applying light out-coupling structures onto outer surfaces of substrates to effectively extract radiation into substrates, OLEDs using such low-index transparent electrodes achieve enhanced optical out-coupling and external quantum efficiencies in comparison with conventional OLEDs using ITO.

  20. The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

    Directory of Open Access Journals (Sweden)

    SUN Tao

    2017-02-01

    Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

  1. Large-area self-assembled reduced graphene oxide/electrochemically exfoliated graphene hybrid films for transparent electrothermal heaters

    Science.gov (United States)

    Sun, Hongyan; Chen, Ding; Ye, Chen; Li, Xinming; Dai, Dan; Yuan, Qilong; Chee, Kuan W. A.; Zhao, Pei; Jiang, Nan; Lin, Cheng-Te

    2018-03-01

    Graphene shows great promise as a high-efficiency electrothermal film for flexible transparent defoggers/defrosters. However, it remains a great challenge to achieve a good balance between the production cost and the properties of graphene films. Here, we proposed a cost-effective self-assembly method to fabricate high-performance, large-area graphene oxide/electrochemically exfoliated graphene hybrid films for heater applications. The self-assembled graphene hybrid films with the area of 20 × 20 cm2 could be transferred onto arbitrary substrates with nonplanar surfaces and simply patterned with the hard mask. After reduction by hydrogen iodide vapor followed by 800 °C thermal treatment, the hybrid films with the transmittance of 76.2% exhibit good heating characteristics and defogging performance, which reach a saturation temperature of up to 127.5 °C when 40 V was applied for 60 s.

  2. Novel transparent high-performance AgNWs/ZnO electrodes prepared on unconventional substrates with 3D structured surfaces

    Science.gov (United States)

    Lan, Wei; Yang, Zhiwei; Zhang, Yue; Wei, Yupeng; Wang, Pengxiang; Abas, Asim; Tang, Guomei; Zhang, Xuetao; Wang, Junya; Xie, Erqing

    2018-03-01

    With the development of optoelectronic devices with three-dimensional (3D) structured surfaces, transparent electrodes that can be deposited on non-plane substrates have become increasingly important. In this paper, novel transparent silver nanowire (AgNWs)/ZnO film electrodes were uniformly prepared on treated 3D glass and PET substrates with a combination of spin-coating and heat-welding. The AgNWs/ZnO films show a transmittance of ∼88% and a sheet resistance of ∼10 Ω/sq. They are comparable with commercial ITO films. Furthermore, only a small in-plane resistance variation of ∼1 Ω/sq was measured using four-point probe mapping in films with a 10 cm × 10 cm area. These results confirm that these novel film electrodes are very uniform. Both electrical resistance and optical transmittance of the films remain mostly intact after 1000 bending cycles and tape peeling-tests with 10 cycles. The films show high thermal stability for more than one month at 80 °C. The strategy provides a new route for the design and fabrication of optoelectronic devices with 3D structured surfaces.

  3. Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok; Yoon, Young-sun; Shin, Jae-Heon; Hwang, Chi-Sun; Chu, Hye Yong

    2009-01-01

    Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimization of ITO source and drain electrode for TTFTs on glass substrates. For example, un-etched ITO remnants, which frequently found in the wet etching process, often originate from unsuitable ITO formation processes. In order to improve them, an ion beam deposition method is introduced, which uses for forming a seed layer before the main ITO deposition. We confirm that ITO films with seed layers are effective to obtain clean and smooth glass surfaces without un-etched ITO remnants, resulting in a good long-run electrical stability of the top-gate indium-gallium-zinc oxide-TTFT.

  4. Photolithographic Synthesis of High-Density DNA and RNA Arrays on Flexible, Transparent, and Easily Subdivided Plastic Substrates.

    Science.gov (United States)

    Holden, Matthew T; Carter, Matthew C D; Wu, Cheng-Hsien; Wolfer, Jamison; Codner, Eric; Sussman, Michael R; Lynn, David M; Smith, Lloyd M

    2015-11-17

    The photolithographic fabrication of high-density DNA and RNA arrays on flexible and transparent plastic substrates is reported. The substrates are thin sheets of poly(ethylene terephthalate) (PET) coated with cross-linked polymer multilayers that present hydroxyl groups suitable for conventional phosphoramidite-based nucleic acid synthesis. We demonstrate that by modifying array synthesis procedures to accommodate the physical and chemical properties of these materials, it is possible to synthesize plastic-backed oligonucleotide arrays with feature sizes as small as 14 μm × 14 μm and feature densities in excess of 125 000/cm(2), similar to specifications attainable using rigid substrates such as glass or glassy carbon. These plastic-backed arrays are tolerant to a wide range of hybridization temperatures, and improved synthetic procedures are described that enable the fabrication of arrays with sequences up to 50 nucleotides in length. These arrays hybridize with S/N ratios comparable to those fabricated on otherwise identical arrays prepared on glass or glassy carbon. This platform supports the enzymatic synthesis of RNA arrays and proof-of-concept experiments are presented showing that the arrays can be readily subdivided into smaller arrays (or "millichips") using common laboratory-scale laser cutting tools. These results expand the utility of oligonucleotide arrays fabricated on plastic substrates and open the door to new applications for these important bioanalytical tools.

  5. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  6. Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

    Science.gov (United States)

    Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

    2015-09-09

    Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.

  7. Improving Light Outcoupling Efficiency for OLEDs with Microlens Array Fabricated on Transparent Substrate

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2014-01-01

    Full Text Available Low light outcoupling efficiency restricts the wide application of organic light-emitting diodes in solid state light market although the internal quantum efficiency of the device could reach near to 100%. In order to improve the output efficiency, different kinds of microlens array on the substrate emission surface were designed and simulated using light tracing method. Simulation results indicate that the microlens array on the substrate could efficiently improve the light output efficiency and an enhancement of 1.8 could be obtained with optimized microlens structure design. The microlens array with semicircle shape using polymer material was fabricated on glass substrate by a facile approach. Finally, the organic device with microlens array substrate was manufactured and the light output of the device with surface microlens structure could increase to 1.64 times comparing with the device without microlens.

  8. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    International Nuclear Information System (INIS)

    Park, Taesoon; Kim, Dongsik

    2015-01-01

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

  9. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  10. Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

    Science.gov (United States)

    Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

    2015-03-01

    The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

  11. Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks.

    Science.gov (United States)

    Wan, Jiayu; Gu, Feng; Bao, Wenzhong; Dai, Jiaqi; Shen, Fei; Luo, Wei; Han, Xiaogang; Urban, Daniel; Hu, Liangbing

    2015-06-10

    In this work, we report for the first time that Na-ion intercalation of reduced graphene oxide (RGO) can significantly improve its printed network's performance as a transparent conductor. Unlike pristine graphene that inhibits Na-ion intercalation, the larger layer-layer distance of RGO allows Na-ion intercalation, leading to simultaneously much higher DC conductivity and higher optical transmittance. The typical increase of transmittance from 36% to 79% and decrease of sheet resistance from 83k to 311 Ohms/sq in the printed network was observed after Na-ion intercalation. Compared with Li-intercalated graphene, Na-ion intercalated RGO shows much better environmental stability, which is likely due to the self-terminating oxidation of Na ions on the RGO edges. This study demonstrated the great potential of metal-ion intercalation to improve the performance of printed RGO network for transparent conductor applications.

  12. Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

    Energy Technology Data Exchange (ETDEWEB)

    Jahan, Nusrat; Khan, Wasi, E-mail: wasiamu@gmail.com; Azam, Ameer; Naqvi, A. H. [Department of Applied Physics, Z.H. College of Engineering & Technology, Aligarh Muslim University, Aligarh - 202002 (India)

    2016-05-23

    In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer’s method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

  13. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  14. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  15. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  16. Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

    OpenAIRE

    Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

    2016-01-01

    Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

  17. Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

    International Nuclear Information System (INIS)

    Schoemaker, S.; Willert-Porada, M.

    2009-01-01

    Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

  18. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  19. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  20. Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires

    Directory of Open Access Journals (Sweden)

    Koo B.-R.

    2017-06-01

    Full Text Available We fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.

  1. Vacuum-Assisted Low-Temperature Synthesis of Reduced Graphene Oxide Thin-Film Electrodes for High-Performance Transparent and Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Aytug, Tolga; Rager, Matthew S; Higgins, Wesley; Brown, Forrest G; Veith, Gabriel M; Rouleau, Christopher M; Wang, Hui; Hood, Zachary D; Mahurin, Shannon M; Mayes, Richard T; Joshi, Pooran C; Kuruganti, Teja

    2018-04-04

    Simple and easily integrated design of flexible and transparent electrode materials affixed to polymer-based substrates hold great promise to have a revolutionary impact on the functionality and performance of energy storage devices for many future consumer electronics. Among these applications are touch sensors, roll-up displays, photovoltaic cells, health monitors, wireless sensors, and wearable communication devices. Here, we report an environmentally friendly, simple, and versatile approach to produce optically transparent and mechanically flexible all-solid-state supercapacitor devices. These supercapacitors were constructed on tin-doped indium oxide coated polyethylene terephthalate substrates by intercalation of a polymer-based gel electrolyte between two reduced graphene oxide (rGO) thin-film electrodes. The rGO electrodes were fabricated simply by drop-casting of graphene oxide (GO) films, followed by a novel low-temperature (≤250 °C) vacuum-assisted annealing approach for the in situ reduction of GO to rGO. A trade-off between the optical transparency and electrochemical performance is determined by the concentration of the GO in the initial dispersion, whereby the highest capacitance (∼650 μF cm -2 ) occurs at a relatively lower optical transmittance (24%). Notably, the all-solid-state supercapacitors demonstrated excellent mechanical flexibility with a capacity retention rate above 90% under various bending angles and cycles. These attributes underscore the potential of the present approach to provide a path toward the realization of thin-film-based supercapacitors as flexible and transparent energy storage devices for a variety of practical applications.

  2. Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices

    Energy Technology Data Exchange (ETDEWEB)

    Winkler, Thomas; Schmidt, Hans; Fluegge, Harald; Nikolayzik, Fabian; Baumann, Ihno; Schmale, Stephan; Johannes, Hans-Hermann; Rabe, Torsten [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Hamwi, Sami, E-mail: sami.hamwi@ihf.tu-bs.de [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany); Riedl, Thomas [Institute of Electronic Devices, Bergische Universitaet Wuppertal, Rainer-Gruenter Str. 21, 42119 Wuppertal (Germany); Kowalsky, Wolfgang [Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstr. 22, 38106 Braunschweig (Germany)

    2012-05-01

    We report on transparent and highly conductive multilayer electrodes prepared at room temperature by RF sputtering of zinc tin oxide (ZTO) and thermal evaporation of ultrathin silver (Ag) as top contact for transparent organic light emitting diodes (TOLED). Specifically, we study the morphological, electrical and optical properties of the multilayer structure in particular of the thin Ag film. The tendency of Ag to form agglomerates over time on top of ZTO is shown by atomic force microscopy. From the optical constants derived from ellipsometric measurements we evidenced a bulk like behavior of an Ag film with a thickness of 8 nm embedded in ZTO leading to a low sheet resistance of 9 {Omega}/sq. Furthermore we verify the optical constants by simulation of an optimized ZTO/Ag/ZTO structure. As an application we present a highly efficient TOLED providing a device transmittance of > 82% in the visible part of the spectrum. The TOLED shows no damage caused by sputtering on a lighting area of 80 mm{sup 2} and exhibits efficiencies of 43 cd/A and 36 lm/W.

  3. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  4. Transparent Conducting Films with Multilayered Structures Formed by Carbon Nanotubes and Reduced Graphene Oxides

    International Nuclear Information System (INIS)

    Kang, Jie Hun; Jang, Hyun Chul; Choi, Jung Mi; Hyeon, Jae Young; Sok, Jung Hyun

    2014-01-01

    The replacement for indium tin oxide (ITO) in electronic displays should have comparable optical transmittance and electrical conductivity while being easy to source and manufacture. However, novel materials such as single walled carbon nanotubes (SWCNTs) and reduced graphene oxides (RGOs) are incapable of addressing these challenges. We demonstrate a simple method to fabricate good transparent conductive films (TCFs) by combining and leveraging the superior optical transparency of RGOs and the excellent electrical conductivity of SWCNTs. This method affords thin multilayers of SWCNTs and RGOs with excellent optical and electrical properties because these properties are correlated with spraying time and the amount of SWCNTs or RGOs. In general, transmittance is advantageous to RGO as conductance is to CNTs. With a view to finding good TCFs with reduced sheet resistance, but with little sacrifice of transmittance, it is natural to explore the combination of CNT and RGO. The sandwiched multilayer of SWCNTs and RGOs exhibited a low sheet resistance of 214.2 Ω/sq, which was comparable to that of SWCNTs, and a transmittance of 60% at a wavelength of 550 nm. To further reduce the sheet resistance and improve the transparency of the multilayer TCFs, Au doping was carried out. The doping, in combination with controlled spraying of the amount of SWCNTs and RGOs, led to multilayers with resistance/transmittance combinations of 141.3 Ω/sq and 70% and 371.5 Ω/sq and 83%. These properties meet the requisite criteria for an ITO replacement.

  5. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

    International Nuclear Information System (INIS)

    Canteli Perez-Caballero, D.

    2015-01-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  6. One-Step Process for High-Performance, Adhesive, Flexible Transparent Conductive Films Based on p-Type Reduced Graphene Oxides and Silver Nanowires.

    Science.gov (United States)

    Lai, Yi-Ting; Tai, Nyan-Hwa

    2015-08-26

    This work demonstrates a one-step process to synthesize uniformly dispersed hybrid nanomaterial containing silver nanowires (AgNWs) and p-type reduced graphene (p-rGO). The hybrid nanomaterial was coated onto a polyethylene terephthalate (PET) substrate for preparing high-performance flexible transparent conductive films (TCFs). The p-rGO plays the role of bridging discrete AgNWs, providing more electron holes and lowering the resistance of the contacted AgNWs; therefore, enhancing the electrical conductivity without sacrificing too much transparence of the TCFs. Additionally, the p-rGO also improves the adhesion between AgNWs and substrate by covering the AgNWs on the substrate tightly. The study shows that coating of the hybrid nanomaterials on the PET substrate demonstrates exceptional optoelectronic properties with a transmittance of 94.68% (at a wavelength of 550 nm) and a sheet resistance of 25.0 ± 0.8 Ω/sq. No significant variation in electric resistance can be detected even when the film was subjected to a bend loading with a radius of curvature of 5.0 mm or the film was loaded with a reciprocal tension or compression for 1000 cycles. Furthermore, both chemical corrosion resistance and haze effect were improved when p-rGO was introduced. The study shows that the fabricated flexible TCFs have the potential to replace indium tin oxide film in the optoelectronic industry.

  7. Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

    Science.gov (United States)

    Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

    2018-02-01

    An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

  8. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  9. Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

    Science.gov (United States)

    Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

    2016-08-01

    In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

  10. Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering

    International Nuclear Information System (INIS)

    Karasawa, T.; Miyata, Y.

    1993-01-01

    Transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal In-Sn alloy target in an Ar-O 2 gas mixture. The study demonstrates that the deposition on unheated substrates achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of about 7 x 10 -4 Ω cm), and visible transmission of about 90% for a wavelength of 420 nm. The effects of heat treatment at 450 C in air depends on the deposition conditions of the as-deposited ITO films. Although annealing improves the properties of as-deposited ITO films which were deposited with non-optimum conditions, the optimized condition for the formation of the film in the as-deposited state is essential to obtain a high quality transparent conducting coating. (orig.)

  11. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    spectra indicate that the red characteristic emission of TiO{sub 2}: Eu{sup 3+} due to electric dipole {sup 5}D{sub 0} {yields}{sup 7} F{sub 2} transition occurring after ultraviolet excitation is the strongest. The decay time of the phosphorescence after UV excitation with a Nd:YAG laser (355 nm, f=10Hz) is temperature dependent in the range from 200 C up to 400 C. Finally, it has been found that the lifetime show a significant dependency on europium concentration. The development of rutile phase of titanium dioxide films on stainless steel substrates as protective coatings were investigated. Generally the rutile phases of TiO{sub 2} thin films do not adhere well on stainless steel substrates. In order to improve the adhesion, stainless steel substrates were first coated with titanium films using cathodic vacuum arc deposition. Then these titanium coatings were partially transformed to the rutile phase of titanium dioxide by thermal oxidation. The presence of the rutile phase of titanium dioxide and metallic titanium were confirmed by XRD. Cavitation erosion was used for the first time to investigate the adhesion properties of these coatings. Cavitation erosion tests confirmed that rutile films with a Ti inter layer are well adherent to stainless steel substrates and protect the substrate from erosion. The total mass loss of the thermally oxidized samples of Ti coated stainless steel was found around 3.5 times lower than of the uncoated samples. (orig.)

  12. Transparent 1T-MoS2 nanofilm robustly anchored on substrate by layer-by-layer self-assembly and its ultra-high cycling stability as supercapacitors

    Science.gov (United States)

    Li, Danqin; Zhou, Weiqiang; Zhou, Qianjie; Ye, Guo; Wang, Tongzhou; Wu, Jing; Chang, Yanan; Xu, Jingkun

    2017-09-01

    Two-dimensional MoS2 materials have attracted more and more interest and been applied to the field of energy storage because of its unique physical, optical, electronic and electrochemical properties. However, there are no reports on high-stable transparent MoS2 nanofilms as supercapacitors electrode. Here, we describe a transparent 1T-MoS2 nanofilm electrode with super-long stability anchored on the indium tin oxide (ITO) glass by a simple alternate layer-by-layer (LBL) self-assembly of a highly charged cationic poly(diallyldimethylammonium chloride) (PDDA) and negative single-/few-layer 1T MoS2 nanosheets. The ITO/(PDDA/MoS2)20 electrode shows a transmittance of 51.6% at 550 nm and obviously exhibits excellent transparency by naked eye observation. Ultrasonic damage test validates that the (PDDA/MoS2)20 film with the average thickness about 50 nm is robustly anchored on ITO substrate. Additionally, the electrochemical results indicate that the ITO/(PDDA/MoS2)20 film shows areal capacitance of 1.1 mF cm-2 and volumetric capacitance of 220 F cm-3 at 0.04 mA cm-2, 130.6% retention of the original capacitance value after 5000 cycles. Further experiments indicate that the formation of transparent (PDDA/MoS2) x nanofilm by LBL self-assembly can be extended to other substrates, e.g., slide glass and flexible polyethylene terephthalate (PET). Thus, the easily available (PDDA/MoS2) x nanofilm electrode has great potential for application in transparent and/or flexible optoelectronic and electronics devices.

  13. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

    Science.gov (United States)

    Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

    2015-03-24

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

  14. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke

    2015-03-11

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g). © 2015, National Academy of Sciences. All rights reserved.

  15. Solution processed zinc oxide nanopyramid/silver nanowire transparent network films with highly tunable light scattering properties

    KAUST Repository

    Mehra, Saahil

    2013-01-01

    Metal nanowire transparent networks are promising replacements to indium tin oxide (ITO) transparent electrodes for optoelectronic devices. While the transparency and sheet resistance are key metrics for transparent electrode performance, independent control of the film light scattering properties is important to developing multifunctional electrodes for improved photovoltaic absorption. Here we show that controlled incorporation of ZnO nanopyramids into a metal nanowire network film affords independent, highly tunable control of the scattering properties (haze) with minimal effects on the transparency and sheet resistance. Varying the zinc oxide/silver nanostructure ratios prior to spray deposition results in sheet resistances, transmission (600 nm), and haze (600 nm) of 6-30 Ω □-1, 68-86%, and 34-66%, respectively. Incorporation of zinc oxide nanopyramid scattering agents into the conducting nanowire mesh has a negligible effect on mesh connectivity, providing a straightforward method of controlling electrode scattering properties. The decoupling of the film scattering power and electrical characteristics makes these films promising candidates for highly scattering transparent electrodes in optoelectronic devices and can be generalized to other metal nanowire films as well as carbon nanotube transparent electrodes. © 2013 The Royal Society of Chemistry.

  16. An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

    International Nuclear Information System (INIS)

    Chen, Chih-Sheng; Hsieh, Chien-Kuo

    2014-01-01

    In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily

  17. An easy, low-cost method to transfer large-scale graphene onto polyethylene terephthalate as a transparent conductive flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chih-Sheng; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

    2014-11-03

    In this study, we develop a low-cost method for transferring a large-scale graphene film onto a flexible transparent substrate. An easily accessible method for home-made chemical vapor deposition (CVD) and a commercial photograph laminator were utilized to fabricate the low-cost graphene-based transparent conductive flexible substrate. The graphene was developed based on CVD growth on nickel foil using a carbon gas source, and the graphene thin film was easily transferred onto the laminating film via a heated photograph laminator. Field emission scanning electron microscopy and atomic force microscopy were utilized to examine the morphological characteristics of the graphene surface. Raman spectroscopy and transmission electron microscopy were utilized to examine the microstructure of the graphene. The optical–electronic properties of the transferred graphene flexible thin film were measured by ultraviolet–visible spectrometry and a four-point probe. The advantage of this method is that large-scale graphene-based thin films can be easily obtained. We provide an economical method for fabricating a graphene-based transparent conductive flexible substrate. - Highlight: • We synthesized the large-scale graphene by thermal CVD method. • A low-cost commercial photograph laminator was used to transfer graphene. • A large-scale transparent and flexible graphene substrate was obtained easily.

  18. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  19. Transparent and conductive polyethylene oxide film by the introduction of individualized single-walled carbon nanotubes.

    Science.gov (United States)

    Jung, Yong Chae; Muramatsu, Hiroyuki; Park, Ki Chul; Shimamoto, Daisuke; Kim, Jin Hee; Hayashi, Takuya; Song, Sung Moo; Kim, Yoong Ahm; Endo, Morinobu; Dresselhaus, Mildred S

    2009-12-16

    It is demonstrated that an optically transparent and electrically conductive polyethylene oxide (PEO) film is fabricated by the introduction of individualized single-walled carbon nanotubes (SWNTs). The incorporated SWNTs in the PEO film sustain their intrinsic electronic and optical properties and, in addition, the intrinsic properties of the polymer matrix are retained. The individualized SWNTs with smaller diameter provide high transmittance as well as good electrical conductivity in PEO films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Synthesis of Copper-Based Transparent Conductive Oxides with Delafossite Structure via Sol-Gel Processing

    OpenAIRE

    Götzendörfer, Stefan

    2011-01-01

    Starting off with solubility experiments of possible precursors, the present study reveals the whole development of a sol gel processing route for transparent p type semiconductive thin films with delafossite structure right to the fabrication of functional p-n junctions. The versatile sol formulation could successfully be modified for several oxide compositions, enabling the synthesis of CuAlO2, CuCrO2, CuMnO2, CuFeO2 and more. Although several differences in the sintering behaviour of powde...

  1. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    International Nuclear Information System (INIS)

    Ponnamma, Deepalekshmi; Sadasivuni, Kishor Kumar; Cabibihan, John-John; Yoon, W. Jong; Kumar, Bijandra

    2016-01-01

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  2. Memristive properties of transparent oxide semiconducting (Ti,Cu)O x -gradient thin film

    Science.gov (United States)

    Domaradzki, Jarosław; Kotwica, Tomasz; Mazur, Michał; Kaczmarek, Danuta; Wojcieszak, Damian

    2018-01-01

    The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

  3. Easily doped p-type, low hole effective mass, transparent oxides

    Science.gov (United States)

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-02-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

  4. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Ponnamma, Deepalekshmi [Center for Advanced Materials, Qatar University, P. O. Box 2713, Doha (Qatar); Sadasivuni, Kishor Kumar; Cabibihan, John-John [Mechanical and Industrial Engineering, Qatar University, P.O. Box 2713, Doha (Qatar); Yoon, W. Jong [School of Science, Technology, Engineering, and Mathematics, University of Washington, Bothell, Washington 98011 (United States); Kumar, Bijandra, E-mail: bijandra.kumar@louisville.edu [Conn Center for Renewable Energy Research, University of Louisville, Louisville, Kentucky 40292 (United States); Research and Development Centre in Pharmaceutical Science and Applied Chemistry, Poona College of Pharmacy, Bharati Vidyapeeth Deemed University Erandawane, Pune 411038 (India)

    2016-04-25

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  5. Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

    2016-04-30

    Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

  6. Ag@Ni core-shell nanowire network for robust transparent electrodes against oxidation and sulfurization.

    Science.gov (United States)

    Eom, Hyeonjin; Lee, Jaemin; Pichitpajongkit, Aekachan; Amjadi, Morteza; Jeong, Jun-Ho; Lee, Eungsug; Lee, Jung-Yong; Park, Inkyu

    2014-10-29

    Silver nanowire (Ag NW) based transparent electrodes are inherently unstable to moist and chemically reactive environment. A remarkable stability improvement of the Ag NW network film against oxidizing and sulfurizing environment by local electrodeposition of Ni along Ag NWs is reported. The optical transmittance and electrical resistance of the Ni deposited Ag NW network film can be easily controlled by adjusting the morphology and thickness of the Ni shell layer. The electrical conductivity of the Ag NW network film is increased by the Ni coating via welding between Ag NWs as well as additional conductive area for the electron transport by electrodeposited Ni layer. Moreover, the chemical resistance of Ag NWs against oxidation and sulfurization can be dramatically enhanced by the Ni shell layer electrodeposited along the Ag NWs, which provides the physical barrier against chemical reaction and diffusion as well as the cathodic protection from galvanic corrosion. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Combinatorial Production and Processing of Oxide Nanopowders for Transparent, Ceramic Lasers

    National Research Council Canada - National Science Library

    Laine, Richard M; Rand, Stephen C

    2007-01-01

    Since the discovery of transparent polycrystalline alumina by Coble in 1962, transparent and translucent alumina and yttria based ceramics have achieved a significant presence in our everyday lives...

  8. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

    2017-01-01

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  9. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.

    2017-11-22

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  10. Fabrication and characterization of conductive anodic aluminum oxide substrates

    Science.gov (United States)

    Altuntas, Sevde; Buyukserin, Fatih

    2014-11-01

    Biomaterials that allow the utilization of electrical, chemical and topographic cues for improved neuron-material interaction and neural regeneration hold great promise for nerve tissue engineering applications. The nature of anodic aluminum oxide (AAO) membranes intrinsically provides delicate control over topographic and chemical cues for enhanced cell interaction; however their use in nerve regeneration is still very limited. Herein, we report the fabrication and characterization of conductive AAO (CAAO) surfaces for the ultimate goal of integrating electrical cues for improved nerve tissue behavior on the nanoporous substrate material. Parafilm was used as a protecting polymer film, for the first time, in order to obtain large area (50 cm2) free-standing AAO membranes. Carbon (C) was then deposited on the AAO surface via sputtering. Morphological characterization of the CAAO surfaces revealed that the pores remain open after the deposition process. The presence of C on the material surface and inside the nanopores was confirmed by XPS and EDX studies. Furthermore, I-V curves of the surface were used to extract surface resistance values and conductive AFM demonstrated that current signals can only be achieved where conductive C layer is present. Finally, novel nanoporous C films with controllable pore diameters and one dimensional (1-D) C nanostructures were obtained by the dissolution of the template AAO substrate.

  11. Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

    International Nuclear Information System (INIS)

    Lee, Keunhee; Ki, Hyungson

    2016-01-01

    We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

  12. Defect studies in copper-based p-type transparent conducting oxides

    Science.gov (United States)

    Ameena, Fnu

    Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

  13. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  14. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    Directory of Open Access Journals (Sweden)

    Tae-Jun Ha

    2014-10-01

    Full Text Available We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs for transparent electronics by exploring the shift in threshold voltage (Vth. A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO TFTs possessing large optical band-gap (≈3 eV was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  15. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Tae-Jun [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  16. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  17. Transparent, flexible surface enhanced Raman scattering substrates based on Ag-coated structured PET (polyethylene terephthalate) for in-situ detection

    International Nuclear Information System (INIS)

    Zuo, Zewen; Zhu, Kai; Gu, Chuan; Wen, Yibing; Cui, Guanglei; Qu, Jun

    2016-01-01

    Highlights: • Transparent, flexible SERS substrates were prepared using techniques compatible with well-established silicon device technologies. • The SERS substrates exhibit high sensitivity and good reproducibility. • The high performance is related with the quasi-three-dimensional structure of the PET. • In-situ detection of analyte on irregular objects was achieved by this SERS substrate. - Abstract: Transparent, flexible surface-enhanced Raman scattering (SERS) substrates were fabricated by metalization of structured polyethylene terephthalate (PET) sheets. The resultant Ag-coated structured PET SERS substrates were revealed to be highly sensitive with good reproducibility and stability, an enhancement factor of 3 × 10 6 was acquired, which can be attributed mainly to the presence of plentiful multiple-type hot spots within the quasi-three-dimensional surface of the structured PET obtained by oxygen plasma etching. In addition, detections of model molecules on fruit skin were also carried out, demonstrating the great potential of the Ag-coated structured PET in in-situ detection of analyte on irregular objects. Importantly, the technique used for the preparation of such substrate is completely compatible with well-established silicon device technologies, and large-area fabrication with low cost can be readily realized.

  18. Transparent, flexible surface enhanced Raman scattering substrates based on Ag-coated structured PET (polyethylene terephthalate) for in-situ detection

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Zewen, E-mail: zuozewen@mail.ahnu.edu.cn; Zhu, Kai; Gu, Chuan; Wen, Yibing; Cui, Guanglei; Qu, Jun

    2016-08-30

    Highlights: • Transparent, flexible SERS substrates were prepared using techniques compatible with well-established silicon device technologies. • The SERS substrates exhibit high sensitivity and good reproducibility. • The high performance is related with the quasi-three-dimensional structure of the PET. • In-situ detection of analyte on irregular objects was achieved by this SERS substrate. - Abstract: Transparent, flexible surface-enhanced Raman scattering (SERS) substrates were fabricated by metalization of structured polyethylene terephthalate (PET) sheets. The resultant Ag-coated structured PET SERS substrates were revealed to be highly sensitive with good reproducibility and stability, an enhancement factor of 3 × 10{sup 6} was acquired, which can be attributed mainly to the presence of plentiful multiple-type hot spots within the quasi-three-dimensional surface of the structured PET obtained by oxygen plasma etching. In addition, detections of model molecules on fruit skin were also carried out, demonstrating the great potential of the Ag-coated structured PET in in-situ detection of analyte on irregular objects. Importantly, the technique used for the preparation of such substrate is completely compatible with well-established silicon device technologies, and large-area fabrication with low cost can be readily realized.

  19. Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

    2012-01-01

    We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.

  20. The effect of substrate microstructure on high temperature oxidation of Zr alloy

    International Nuclear Information System (INIS)

    Li, H.; Lin, J.; Szpunar, J.

    2005-01-01

    'Full text:' Specimens with various substrate microstructures of Zr-2.5Nb, Zircaloy 4 and pure Zr have been oxidized at 500C in air. Oxidation kinetics is measured and the microstructures of both oxide and substrate are analyzed. The difference in oxidation kinetics among various specimens is significant. This difference is explained by the distribution of oxide grain size, grain shape and grain boundary, which are controlled by substrate grain size and β phase distribution. The previously proposed model of Zr oxidation is used to predict oxidation kinetics and oxide microstructure from substrate microstructure. Computer simulation based on the model is performed and simulation results are compared with the experimental results. (author)

  1. Ultrathin reduced graphene oxide films as transparent top-contacts for light switchable solid-state molecular junctions

    DEFF Research Database (Denmark)

    Li, Tao; Jevric, Martyn; Hauptmann, Jonas Rahlf

    2013-01-01

    A new type of solid-state molecular junction is introduced, which employs reduced graphene oxide as a transparent top contact that permits a self-assembled molecular monolayer to be photoswitched in situ, while simultaneously enabling charge-transport measurements across the molecules. The electr......A new type of solid-state molecular junction is introduced, which employs reduced graphene oxide as a transparent top contact that permits a self-assembled molecular monolayer to be photoswitched in situ, while simultaneously enabling charge-transport measurements across the molecules...

  2. ITO/Poly(Aniline/Sol-Gel Glass: An Optically Transparent, pH-Responsive Substrate for Supported Lipid Bilayers

    Directory of Open Access Journals (Sweden)

    Ahmed Al-Obeidi

    2013-01-01

    Full Text Available Described here is fabrication of a pH-sensitive, optically transparent transducer composed of a planar indium-tin oxide (ITO electrode overcoated with a poly(aniline (PANI thin film and a porous sol-gel layer. Adsorption of the PANI film renders the ITO electrode sensitive to pH, whereas the sol-gel spin-coated layer makes the upper surface compatible with fusion of phospholipid vesicles to form a planar supported lipid bilayer (PSLB. The response to changes in the pH of the buffer contacting the sol-gel/PANI/ITO electrode is pseudo-Nernstian with a slope of 52 mV/pH over a pH range of 4–9. Vesicle fusion forms a laterally continuous PSLB on the upper sol-gel surface that is fluid with a lateral lipid diffusion coefficient of 2.2 μm2/s measured by fluorescence recovery after photobleaching. Due to its lateral continuity and lack of defects, the PSLB blocks the pH response of the underlying electrode to changes in the pH of the overlying buffer. This architecture is simpler to fabricate than previously reported ITO electrodes derivatized for PSLB formation and should be useful for optical monitoring of proton transport across supported membranes derivatized with ionophores and ion channels.

  3. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Elen, Ken; Capon, Boris; De Dobbelaere, Christopher; Dewulf, Daan; Peys, Nick; Detavernier, Christophe; Hardy, An; Van Bael, Marlies K.

    2014-01-01

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  4. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  5. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

    Science.gov (United States)

    Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

    2015-02-04

    In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

  6. TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

    Directory of Open Access Journals (Sweden)

    Silvia Maioco

    2013-03-01

    Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

  7. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    Science.gov (United States)

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

  8. Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

    Science.gov (United States)

    Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

    2018-03-01

    Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

  9. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  10. Transparent nanocrystalline ZnO films prepared by spin coating

    Energy Technology Data Exchange (ETDEWEB)

    Berber, M. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany)]. E-mail: mete.berber@sustech.de; Bulto, V. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Kliss, R. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Hahn, H. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Forschungszentrum Karlsruhe, Institute for Nanotechnology, Postfach 3640, 76021 Karlsruhe (Germany); Joint Research Laboratory Nanomaterials, TU Darmstadt, Institute of Materials Science, Petersenstr. 23, 64287 Darmstadt (Germany)

    2005-09-15

    Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents.

  11. Transparent nanocrystalline ZnO films prepared by spin coating

    International Nuclear Information System (INIS)

    Berber, M.; Bulto, V.; Kliss, R.; Hahn, H.

    2005-01-01

    Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents

  12. Room-temperature solution-processed and metal oxide-free nano-composite for the flexible transparent bottom electrode of perovskite solar cells

    Science.gov (United States)

    Lu, Haifei; Sun, Jingsong; Zhang, Hong; Lu, Shunmian; Choy, Wallace C. H.

    2016-03-01

    The exploration of low-temperature and solution-processed charge transporting and collecting layers can promote the development of low-cost and large-scale perovskite solar cells (PVSCs) through an all solution process. Here, we propose a room-temperature solution-processed and metal oxide-free nano-composite composed of a silver nano-network and graphene oxide (GO) flawless film for the transparent bottom electrode of a PVSC. Our experimental results show that the amount of GO flakes play a critical role in forming the flawless anti-corrosive barrier in the silver nano-network through a self-assembly approach under ambient atmosphere, which can effectively prevent the penetration of liquid or gaseous halides and their corrosion against the silver nano-network underneath. Importantly, we simultaneously achieve good work function alignment and surface wetting properties for a practical bottom electrode by controlling the degree of reduction of GO flakes. Finally, flexible PVSC adopting the room-temperature and solution-processed nano-composite as the flexible transparent bottom electrode has been demonstrated on a polyethylene terephthalate (PET) substrate. As a consequence, the demonstration of our room-temperature solution-processed and metal oxide-free flexible transparent bottom electrode will contribute to the emerging large-area flexible PVSC technologies.The exploration of low-temperature and solution-processed charge transporting and collecting layers can promote the development of low-cost and large-scale perovskite solar cells (PVSCs) through an all solution process. Here, we propose a room-temperature solution-processed and metal oxide-free nano-composite composed of a silver nano-network and graphene oxide (GO) flawless film for the transparent bottom electrode of a PVSC. Our experimental results show that the amount of GO flakes play a critical role in forming the flawless anti-corrosive barrier in the silver nano-network through a self

  13. Postprandial thermogenesis and substrate oxidation are unaffected by sleep restriction

    Science.gov (United States)

    Shechter, Ari; Rising, Russell; Wolfe, Scott; Albu, Jeanine B.; St-Onge, Marie-Pierre

    2014-01-01

    Background/Objectives The extent to which alterations in energy expenditure (EE) in response to sleep restriction contribute to the short sleep-obesity relationship is not clearly defined. Short sleep may induce changes in resting metabolic rate (RMR), thermic effect of food (TEF), and postprandial substrate oxidation. Subjects/Methods Ten females (age and BMI: 22-43 y and 23.4-28 kg/m2) completed a randomized, crossover study assessing the effects of short (4 h/night) and habitual (8 h/night) sleep duration on fasting and postprandial RMR and respiratory quotient (RQ). Measurements were taken after 3 nights using whole-room indirect calorimetry. The TEF was assessed over a 6-h period following consumption of a high-fat liquid meal. Results Short vs. habitual sleep did not affect RMR (1.01 ± 0.05 and 0.97 ± 0.04 kcal/min; p=0.23). Fasting RQ was significantly lower after short vs. habitual sleep (0.84 ± 0.01 and 0.88 ± 0.01; p=0.028). Postprandial EE (short: 1.13 ± 0.04 and habitual: 1.10 ± 0.04, p=0.09) and RQ (short: 0.88 ± 0.01 and habitual: 0.88 ± 0.01, p=0.50) after the high-fat meal were not different between conditions. TEF was similar between conditions (0.24 ± 0.02 kcal/min in both; p=0.98), as was the ~6-h incremental area under the curve (1.16 ± 0.10 and 1.17 ± 0.09 kcal/min x 356 min after short and habitual sleep, respectively; p=0.92). Conclusions Current findings observed in non-obese healthy premenopausal women do not support the hypothesis that alterations in TEF and postprandial substrate oxidation are major contributors to the higher rate of obesity observed in short sleepers. In exploring a role of sleep duration on EE, research should focus on potential alterations in physical activity to explain the increased obesity risk in short sleepers. PMID:24352294

  14. Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

    Science.gov (United States)

    Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

    2016-05-01

    Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  15. Characterization of transparent superconductivity Fe-doped CuCrO{sub 2} delafossite oxide

    Energy Technology Data Exchange (ETDEWEB)

    Taddee, Chutirat [Materials Science and Nanotechnology Program, Faculty of Science, Khon Kaen University, Khon Kaen 40002 (Thailand); Kamwanna, Teerasak, E-mail: teekam@kku.ac.th [Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002 (Thailand); Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002 (Thailand); Integrated Nanotechnology Research Center (INRC), Khon Kaen University, Khon Kaen 40002 (Thailand); Amornkitbamrung, Vittaya [Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002 (Thailand); Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen 40002 (Thailand); Integrated Nanotechnology Research Center (INRC), Khon Kaen University, Khon Kaen 40002 (Thailand)

    2016-09-01

    Graphical abstract: - Highlights: • Effect of Fe substitution on the physical properties in CuCrO{sub 2} is studied. • The substitution of Cr{sup 3+} by Fe{sup 3+} produces a mixed effect on the magnetic properties. • CuCr{sub 1−x}Fe{sub x}O{sub 2} delafossite oxides show transparent superconductivity. - Abstract: Delafossite CuCr{sub 1−x}Fe{sub x}O{sub 2} (0.0 ≤ x ≤ 0.15) semiconductors were synthesized using a self-combustion urea nitrate process. The effects of Fe concentration on its microstructural, optical, magnetic, and electrical properties were investigated. X-ray diffraction (XRD) analysis results revealed the delafossite structure in all the samples. The lattice spacing of CuCr{sub 1−x}Fe{sub x}O{sub 2} slightly increased with increasing substitution of Fe at the Cr sites. The optical properties measured at room temperature using UV–visible spectroscopy showed a weak absorbability in the visible light and near IR regions. The corresponding direct optical band gap was about 3.61 eV, exhibiting transparency in the visible region. The magnetic hysteresis loop measurements showed that the Fe-doped CuCrO{sub 2} samples exhibited ferromagnetic behavior at room temperature. This indicated that the substitution of Fe{sup 3+} for Cr{sup 3+} produced a mixed effect on the magnetic properties of CuCrO{sub 2} delafossite oxide. The temperature dependent resistivity measurements clearly revealed the presence of superconductivity in the CuCr{sub 1−x}Fe{sub x}O{sub 2} with a superconducting transition up to 118 K.

  16. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    International Nuclear Information System (INIS)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-01

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  17. High adhesion transparent conducting films using graphene oxide hybrid carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Da, Shi-Xun; Wang, Jie; Geng, Hong-Zhang, E-mail: genghz@tjpu.edu.cn; Jia, Song-Lin; Xu, Chun-Xia; Li, Lin-Ge; Shi, Pei-Pei; Li, Guangfen

    2017-01-15

    Graphical abstract: The GO hybrid CNTs to fabricate TCFs could dramatically enhance the conductivity, adhesion, flatness, and wettability of the films, all these improvements are advantageous for optoelectronic applications. - Highlights: • TCFs were fabricated using GO/CNT hybrid inks by a simple spray method. • Conductivity of TCFs was improved through the hybrid of GO/CNT, sheet resistance of TCFs was 146 Ω/sq at the transmittance of 86.0% when the ratio of GO/CNT got 1.5:1.0. • The flatness and wettability of TCFs were improved dramatically, which is advantageous for the solution-based processing of organic electronics for spraying and printing. • The adhesion of the TCFs increased dramatically with the raise of the ratio GO/CNT hybrid. - Abstract: Flexible transparent conducting films (TCFs) with carbon nanotubes (CNTs) have attracted more and more attention for their wide range of potential applications. While, there are still some problems to be solved on several aspects. In this study, a graphene oxide/carbon nanotube (GO/CNT) hybrid TCF was fabricated through the simple spray coating method. GO sheets were introduced to form new electron transporting channels. It was found that the best optoelectronic property films were fabricated when the ratio of GO/CNT is 1.5:1.0, which the sheet resistance of the film was found to be 146 Ω/sq at the transmittance of 86.0%. Due to the two-dimensional structure and the oxidation groups of GO sheets, flatness and wettability of the electrode surface was improved obviously. Adhesion factor of the TCFs was calculated by the change of transparent and sheet resistance after trial test, the addition of GO sheets enhanced the adhesion dramatically and the mechanism was analyzed. Improvements of conductivity, flatness, wettability and adhesion above are all advantageous for the solution-based processing of organic electronics for spraying and printing.

  18. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  19. (-201) β-Gallium oxide substrate for high quality GaN materials

    KAUST Repository

    Roqan, Iman S.; Mumthaz Muhammed, Mufasila

    2015-01-01

    (-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a

  20. Highly transparent vanadium oxide-graded indium zinc oxide electrodes for flexible organic solar cells

    International Nuclear Information System (INIS)

    Ko, Eun-Hye; Kim, Han-Ki

    2016-01-01

    We investigated characteristics of amorphous V_2O_5-graded InZnO (IZO) films to use as a flexible anode for flexible organic solar cells (FOSCs). Graded sputtering of the V_2O_5 layer on the IZO layer produced V_2O_5-graded IZO anodes (VGIZO) with a sheet resistance of 42.14 Ω/square, a resistivity of 6.32 × 10"−"4 Ω cm, and an optical transmittance of 82.15%, as well as good mechanical flexibility. In addition, the VGIZO electrode showed a greater work function of 5.2 eV than that (4.9 eV) of an IZO anode, which is beneficial for hole extraction from an organic active layer. Due to the higher work function of the VGIZO electrodes, FOSCs fabricated on the flexible VGIZO anode exhibited a higher power conversion efficiency 2.753% than that of FOSCs on the IZO anode. This indicates that the V_2O_5 graded sputtering is a promising technique to increase the work function of the IZO anode without change in sheet resistance and transmittance. - Highlights: • Transparent and flexible V_2O_5 graded IZO (VGIZO) electrodes. • High work function of VGIZO electrodes • The VGIZO film is a promising flexible anode for flexible organic solar cells.

  1. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    Science.gov (United States)

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  2. Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

    2013-01-01

    In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

  3. High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

    NARCIS (Netherlands)

    Macco, B.; Wu, Y.; Vanhemel, D.; Kessels, W.M.M.

    2014-01-01

    The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown

  4. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

    2012-01-01

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

  5. An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

    NARCIS (Netherlands)

    Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

    2016-01-01

    Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

  6. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  7. Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

    Science.gov (United States)

    Zhu, Jiayi; He, Junhui

    2012-05-01

    We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

  8. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    International Nuclear Information System (INIS)

    Xiao, Yu; Gao, Fangyuan; Dong, Guobo; Guo, Tingting; Liu, Qirong; Ye, Di; Diao, Xungang

    2014-01-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10 −4 Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n −0.127 , which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested

  9. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Yu [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Gao, Fangyuan, E-mail: gaofangyuan@buaa.edu.cn [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Dong, Guobo; Guo, Tingting; Liu, Qirong [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Ye, Di [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100191 (China); Diao, Xungang [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2014-04-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10{sup −4} Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n{sup −0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested.

  10. The effect of substrate texture and oxidation temperature on oxide texture development in zirconium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Garner, A., E-mail: alistair.garner@manchester.ac.uk [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Frankel, P. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom); Partezana, J. [Westinghouse Electric Company, 1332 Beulah Road, Pittsburgh, PA 15235 (United States); Preuss, M. [Materials Performance Centre, University of Manchester, Grosvenor Street, Manchester, M17HS (United Kingdom)

    2017-02-15

    During corrosion of zirconium alloys a highly textured oxide is formed, the degree of this preferred orientation has previously been shown to be an important factor in determining the corrosion behaviour of these alloys. Two distinct experiments were designed in order to investigate the origin of this oxide texture development on two commercial alloys. Firstly, sheet samples of Zircaloy-4 were oxidised between 500 and 800 °C in air. The resulting monoclinic oxide texture strength was observed to decrease with increasing oxidation temperature. In a second experiment, orthogonal faces of Low Tin ZIRLO{sub ™} were oxidised in 360 °C water, providing different substrate textures but identical microstructures. The substrate texture was observed to have a negligible effect on the corrosion performance whilst the major orientation of both oxide phases was found to be independent of substrate orientation. It is concluded that the main driving force for oxide texture development in single-phase zirconium alloys is the compressive stress caused by the Zr−ZrO{sub 2} transformation. - Highlights: • Substrate orientation does not significantly affect oxide texture development. • Corrosion performance is independent of substrate texture. • Monoclinic oxide texture strength decreases with increasing oxidation temperature. • The main driving force for texture development is the oxidation-induced stress.

  11. Experimental and Simulated Investigations of Thin Polymer Substrates with an Indium Tin Oxide Coating under Fatigue Bending Loadings

    Directory of Open Access Journals (Sweden)

    Jiong-Shiun Hsu

    2016-08-01

    Full Text Available Stress-induced failure is a critical concern that influences the mechanical reliability of an indium tin oxide (ITO film deposited on a transparently flexible polyethylene terephthalate (PET substrate. In this study, a cycling bending mechanism was proposed and used to experimentally investigate the influences of compressive and tensile stresses on the mechanical stability of an ITO film deposited on PET substrates. The sheet resistance of the ITO film, optical transmittance of the ITO-coated PET substrates, and failure scheme within the ITO film were measured to evaluate the mechanical stability of the concerned thin films. The results indicated that compressive and tensile stresses generated distinct failure schemes within an ITO film and both led to increased sheet resistance and optical transmittance. In addition, tensile stress increased the sheet resistance of an ITO film more easily than compressive stress did. However, the influences of both compressive and tensile stress on increased optical transmittance were demonstrated to be highly similar. Increasing the thickness of a PET substrate resulted in increased sheet resistance and optical transmittance regardless of the presence of compressive or tensile stress. Moreover, J-Integral, a method based on strain energy, was used to estimate the interfacial adhesion strength of the ITO-PET film through the simulation approach enabled by a finite element analysis.

  12. Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Capezzuto, P.; Bruno, G.; de Rosa, R.; Roca, F.; Summonte, C.; Plá, J.; Rizzoli, R.

    2002-01-01

    Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.

  13. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  14. Electromechanical properties of indium–tin–oxide/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) hybrid electrodes for flexible transparent electrodes

    International Nuclear Information System (INIS)

    Jung, Sunghoon; Lim, Kyounga; Kang, Jae-Wook; Kim, Jong-Kuk; Oh, Se-In; Eun, Kyoungtae; Kim, Do-Geun; Choa, Sung-Hoon

    2014-01-01

    We investigated an indium–tin–oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hybrid electrode as a potential flexible and transparent electrode. In particular, the mechanical integrity of an ITO/PEDOT:PSS hybrid electrode deposited onto a polyethylene terephthalate (PET) substrate was investigated via outer/inner bending, twisting, stretching, and adhesion tests. A PEDOT:PSS layer was inserted between ITO and PET substrate as a buffer layer to improve the flexibility and electrical properties. When a PEDOT:PSS layer was inserted, the sheet resistance of the 20 nm-thick ITO film decreased from 270 Ω/square to 57 Ω/square. Notably, the ITO/PEDOT:PSS hybrid electrode had a constant resistance change (ΔR/R 0 ) within an outer and inner bending radius of 3 mm. The bending fatigue test showed that the ITO/PEDOT:PSS hybrid electrode can withstand 10,000 bending cycles. Furthermore, the stretched ITO/PEDOT:PSS hybrid electrode showed a fairly constant resistance change up to 4%, which is more stable than the resistance change of the ITO electrode. The ITO/PEDOT:PSS electrode also shows good adhesion strength. The superior flexibility of the ITO/PEDOT:PSS hybrid electrode is attributed to the existence of a flexible PEDOT:PSS layer. This indicates that the hybridization of an ITO and PEDOT:PSS layer is a promising electrode scheme for next-generation flexible transparent electrodes. - Highlights: • We propose a hybrid electrode for flexible electronics. • Electrode made from In 2 O 3 :SnO 2 /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) • PEDOT:PSS as a buffer layer increases flexibility and electrical conductivity. • Hybrid electrode has a superior flexibility. • Hybrid electrode can be a promising flexible transparent electrode scheme

  15. A primary reduced TCA flux governs substrate oxidation in T2D skeletal muscle

    DEFF Research Database (Denmark)

    Gaster, Michael

    2012-01-01

    Our current knowledge on substrate oxidation in skeletal muscle in relation to insulin resistance and type 2 diabetes (T2D) originate mainly from in vivo studies. The oxidative capacity of skeletal muscle is highly influenced by physical activity, ageing, hormonal status, and fiber type composition...... further regulatory mechanism to our understanding of substrate oxidation in human skeletal muscle during normo- an pathophysiological conditions, focusing especially on the governing influence of a primary reduced TCA flux for the diabetic phenotype in skeletal muscle....

  16. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  17. Flexible and Transparent Plastic Electrodes Composed of Reduced Graphene Oxide/Polyaniline Films for Supercapacitor Application

    International Nuclear Information System (INIS)

    Sarker, Ashis K.; Hong, Jongdal

    2014-01-01

    In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layerby-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at 100 .deg. C, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-RGO 30 /PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-RGO 30 /PET electrode was found to be 529 F/cm 3 at a current density of 3 A/cm 3 , which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-RGO 30 /PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode

  18. Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

    International Nuclear Information System (INIS)

    Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

    2011-01-01

    A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

  19. Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

    International Nuclear Information System (INIS)

    Berger, Jana; Roch, Teja; Correia, Stelio; Eberhardt, Jens; Lasagni, Andrés Fabián

    2016-01-01

    In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm"2 and 89 mJ/cm"2, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

  20. Controlling the optical performance of transparent conducting oxides using direct laser interference patterning

    Energy Technology Data Exchange (ETDEWEB)

    Berger, Jana; Roch, Teja [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany); Correia, Stelio; Eberhardt, Jens [Bosch Solar Energy AG, August-Broemel-Str. 6, 99310 Arnstadt (Germany); Lasagni, Andrés Fabián, E-mail: andres_fabian.lasagni@tu-dresden.de [Fraunhofer-Institut für Werkstoff-und Strahltechnik IWS, Winterbergstr. 28, 01277 Dresden (Germany); Technische Universität Dresden, Institute of Manufacturing Technology, George-Baehr-Str.1, 01069 Dresden (Germany)

    2016-08-01

    In this study, a laser based process called Direct Laser Interference Patterning (DLIP) was used to fabricate micro-textured boron doped zinc oxide (ZnO:B) thin films to be used as electrodes in thin-film silicon solar cells. First, the ablation thresholds of the ZnO:B film were determined using a nanosecond pulsed laser at wavelengths of 266 and 355 nm (100 mJ/cm{sup 2} and 89 mJ/cm{sup 2}, respectively). After that, DLIP experiments were performed at 355 nm wavelength. Line-like periodic surface structures with spatial periods ranging from 0.8 to 5.0 μm were fabricated using two interfering laser beams. It was found that the structuring process of the transparent conducting oxide (TCO) is mainly based on a photo-thermal mechanism. The surface of the ZnO:B film was molten and evaporated at the interference maxima positions and the depth and width of the generated microfeatures depend on the laser parameters as well as the spatial period of the interference pattern. The optical properties of the structured TCOs were investigated as a function of the utilized laser processing parameters. Both diffuse and total transmission and the intensity of the diffraction orders were determined. These data were used to calculate the increase of the optical path of the transmitted light. - Highlights: • Direct Laser Interference Patterning (DLIP) on boron doped zinc oxide (LPCVD-ZnO:B) • No relevant decrease of total transmission • Periods of 1.5 μm provide large diffraction angle and good diffraction intensity. • Significant increase of optical path length could be reached.

  1. Transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} polycrystalline films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hitosugi, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: hitosugi@chem.s.u-tokyo.ac.jp; Ueda, A. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T.; Hasegawa, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2008-07-01

    We report on transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H{sub 2}-annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10{sup -4} {omega} cm and 1.5 x 10{sup -3} {omega} cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

  2. Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

    2014-07-01

    Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

  3. Substrate and nutrient limitation of ammonia-oxidizing bacteria and archaea in temperate forest soil

    Science.gov (United States)

    J.S. Norman; J.E. Barrett

    2014-01-01

    Ammonia-oxidizing microbes control the rate-limiting step of nitrification, a critical ecosystem process, which affects retention and mobility of nitrogen in soil ecosystems. This study investigated substrate (NH4þ) and nutrient (K and P) limitation of ammonia-oxidizing bacteria (AOB) and ammonia-oxidizing archaea (AOA) in temperate forest soils at Coweeta Hydrologic...

  4. Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2009-01-01

    Bipolar pulsed magnetron sputtering is used to deposit Al doped ZnO (AZO) on a glass substrate for a transparent conducting oxide in a solar cell structure. A 5x25 in. 2 AZO target was sputtered by 50-250 kHz bipolar pulsed dc power supply to deposit a 400x400 mm 2 area by swinging back and forth. Sheet resistance, surface morphology, and optical transmittance were measured at different positions on 16 witness samples (small glass slides) to evaluate uniformity. In the thickness of 800 nm, the average value of sheet resistance was 30 Ω/□ and the average resistivity was 2.1x10 -3 Ω cm. Transmittance was 50%-80% over the visible range. The nonuniformities of thickness, transmittance, and resistivity in the 400x400 mm 2 area were 5.8%, 0.8%, and within 9.5%, respectively.

  5. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Gary S.; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu, Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve; Hartmann, Sören; Jessen, Frank; Krogmann, Bianaca; Rickers, Christoph; Ruske, Manfred; Schwab, Holger; Bertram, Dietrich

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  6. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  7. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  8. Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

    Science.gov (United States)

    Ali, D.; Butt, M. Z.; Coughlan, C.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2018-04-01

    We have investigated the properties and conduction limitations of spray pyrolysis grown, low-cost transparent conducting oxide ZnO thin films doped with indium. We analyze the optical, electrical, and crystallographic properties as functions of In content with a specific focus on postgrowth heat treatment of these thin films at 320 ∘C in an inert, nitrogen atmosphere, which improves the films electrical properties considerably. The effect was found to be dominated by nitrogen-induced grain-boundary passivation, identified by a combined study using i n situ resistance measurement upon annealing, x-ray photoelectron spectroscopy, photoluminescence, and x-ray diffraction studies. We also highlight the chemical mechanism of morphologic and crystallographic changes found in films with high indium content. By optimizing growth conditions according to these findings, ZnO:In with a resistivity as low as 2 ×10 -3Ω cm , high optical quality (T ≈90 % ), and sheet resistance of 32 Ω /□ has been obtained without any need for postgrowth treatments.

  9. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    CERN Document Server

    Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

    2013-01-01

    The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

  10. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  11. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  12. Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

    Science.gov (United States)

    Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

    2018-04-01

    Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

  13. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

    2015-12-31

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  14. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    International Nuclear Information System (INIS)

    Shirahata, Takahiro; Kawaharamura, Toshiyuki; Fujita, Shizuo; Orita, Hiroyuki

    2015-01-01

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10"−"4 Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac)_2], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH_3 to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10"−"3 Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac)_2] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10"−"3 Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  15. Influence of metformin and insulin on myocardial substrate oxidation under conditions encountered during cardiac surgery.

    Science.gov (United States)

    Holmes, Cyonna; Powell, LaShondra; Clarke, Nicholas S; Jessen, Michael E; Peltz, Matthias

    2018-02-01

    The influence of diabetic therapies on myocardial substrate selection during cardiac surgery is unknown but may be important to ensure optimal surgical outcomes. We hypothesized that metformin and insulin alter myocardial substrate selection during cardiac surgery and may affect reperfusion cardiac function. Rat hearts (n = 8 per group) were evaluated under 3 metabolic conditions: normokalemia, cardioplegia, or bypass. Groups were perfused with Krebs-Henseleit buffer in the presence of no additives, metformin, insulin, or both insulin and metformin. Perfusion buffer containing physiologic concentrations of energetic substrates with different carbon-13 ( 13 C) labeling patterns were used to determine substrate oxidation preferences using 13 C magnetic resonance spectroscopy and glutamate isotopomer analysis. Rate pressure product and oxygen consumption were measured. Myocardial function was not different between groups. For normokalemia, ketone oxidation was reduced in the presence of insulin and the combination of metformin and insulin reduced fatty acid oxidation. Metformin reduced fatty acid and ketone oxidation during cardioplegia. Fatty acid oxidation was increased in the bypass group compared with all other conditions. Metformin and insulin affect substrate utilization and reduce fatty acid oxidation before reperfusion. These alterations in substrate oxidation did not affect myocardial function in otherwise normal hearts. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Transparent and conductive paper from nanocellulose fibers

    KAUST Repository

    Hu, Liangbing

    2013-01-01

    Here we report on a novel substrate, nanopaper, made of cellulose nanofibrils, an earth abundant material. Compared with regular paper substrates, nanopaper shows superior optical properties. We have carried out the first study on the optical properties of nanopaper substrates. Since the size of the nanofibrils is much less than the wavelength of visible light, nanopaper is highly transparent with large light scattering in the forward direction. Successful depositions of transparent and conductive materials including tin-doped indium oxide, carbon nanotubes and silver nanowires have been achieved on nanopaper substrates, opening up a wide range of applications in optoelectronics such as displays, touch screens and interactive paper. We have also successfully demonstrated an organic solar cell on the novel substrate. © The Royal Society of Chemistry 2013.

  17. Indium-free Cu/fluorine doped ZnO composite transparent conductive electrodes with stretchable and flexible performance on poly(ethylene terephthalate) substrate

    Science.gov (United States)

    Han, Jun; Gong, Haibo; Yang, Xiaopeng; Qiu, Zhiwen; Zi, Min; Qiu, Xiaofeng; Wang, Hongqiang; Cao, Bingqiang

    2015-03-01

    Material-abundant ZnO and metal thin film have been proposed as potential alternatives for the most widely commercial indium tin oxide (ITO) transparent and conductive electrode. Yet the deterioration of optical transparency and conductivity for these materials makes them difficult to compete with ITO. In this work, a double-layer structured film-composed of FZO and Cu film is presented at room temperature, which combines the high transparency of FZO and high conductivity of Cu film. We first studied the effect of oxygen pressure on the transparency and conductivity of free-standing FZO layer deposited on poly(ethylene terephthalate) (PET) by PLD method. Also the structural, electrical, and optical properties of bilayers electrode dependence on the Cu layer thickness were optimized in detail. As the Cu layer thickness increases, the resistivity decreases. The lowest resistivity of 6.6 × 10-5 Ω cm with a carrier concentration of 1.11 × 1022 cm-3 and mobility of 8.52 cm2 V-1 s-1 was obtained at the optimum Cu (12 nm) layer thickness. We find that FZO layer have anti-reflection effect for Cu/FZO (250 nm) bilayer in the wavelength range of 650-1000 nm compared with single Cu layer. And we firstly study the stretchable performance for Cu film-based composite electrodes with stretching ratio changing from 0 to 5%. Furthermore, we study excellent mechanical flexibility and stability of composite electrodes by bending test.

  18. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    Science.gov (United States)

    Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

    2012-07-01

    Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

  19. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    International Nuclear Information System (INIS)

    Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

    2012-01-01

    Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

  20. Application of a mixed metal oxide catalyst to a metallic substrate

    Science.gov (United States)

    Sevener, Kathleen M. (Inventor); Lohner, Kevin A. (Inventor); Mays, Jeffrey A. (Inventor); Wisner, Daniel L. (Inventor)

    2009-01-01

    A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system.

  1. XPS study of graphene oxide reduction induced by (100) and (111)-oriented Si substrates

    Science.gov (United States)

    Priante, F.; Salim, M.; Ottaviano, L.; Perrozzi, F.

    2018-02-01

    The reduction of graphene oxide (GO) has been extensively studied in literature in order to let GO partially recover the properties of graphene. Most of the techniques proposed to reduce GO are based on high temperature annealing or chemical reduction. A new procedure, based on the direct reduction of GO by etched Si substrate, was recently proposed in literature. In the present work, we accurately investigated the Si-GO interaction with x-ray photoelectron spectroscopy. In order to avoid external substrate oxidation factors we used EtOH as the GO solvent instead of water, and thermal annealing was carried out in UHV. We investigated the effect of Si(100), Si(111) and Au substrates on GO, to probe the role played by both the substrate composition and substrate orientation during the reduction process. A similar degree of GO reduction was observed for all samples but only after thermal annealing, ruling out the direct reduction effect of the substrate.

  2. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

    2015-11-01

    Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  3. Determinants of the acetate recovery factor: implications for estimation of 13C substrate oxidation.

    NARCIS (Netherlands)

    P. Schrauwen; E.E. Blaak; A.J.M. Wagenmakers; dr. Lars B. Borghouts; D.P.C. van Aggel-Leijssen

    2000-01-01

    The data of this study indicate that the acetate recovery factor, used in stable isotope research, needs to be deteremined in every subject, under similar conditions as used for the tracer-derived determination of substrate oxidation.

  4. Influence of sputtering gas pressure on properties of transparent conducting Si-doped zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Hua; Liu, Hunfa; Lei, Chengxin [Shandong Univ. of Technology, Zibo (China). Dept. of Sciences

    2013-10-15

    Si-doped zinc oxide (SZO, Si 3%) thin films were deposited on glass substrates by means of direct current magnetron sputtering under different pressures. The influence of sputtering pressure on structure, morphology, optical and electrical properties of SZO thin films was investigated. The results reveal that the sputtering pressures have a significant impact on the growth rate, crystal quality and electrical properties of the films, but have little impact on the optical properties of the films. SZO thin film samples grown on glasses are polycrystalline with a hexagonal wurtzite structure and have a preferred orientation along the c-axis perpendicular to the substrate. When the sputtering pressure increases from 2 to 8 Pa, the film surface becomes compact and smooth, the degree of crystallization of the films increases, and the resistivity of films decreases. However, when the sputtering pressure continues to increase from 8 to 10 Pa, the degree of crystallization of the films decreases, the grain size decreases, and the resistivity of the films increases. SZO(3%) thin film deposited at a sputtering pressure of 8 Pa shows the largest carrier concentration, the largest mobility, the lowest resistivity of 3.0 x 10{sup -4} {Omega} cm and a high overall transmission of 93.3% in the visible range. (orig.)

  5. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo [School of Mechanical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Dong Rip, E-mail: dongrip@hanyang.ac.kr [School of Mechanical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-06-15

    Graphical abstract: - Highlights: • Cerium oxide nanorods were uniformly grown on diverse substrates. • Changes in growth conditions led to morphology evolution of cerium oxide nanostructures. • The grown cerium oxide nanostructures were single or poly crystalline. • Direct growth of cerium oxide nanorods made the diverse substrates superhydrophobic and anti-corrosive without any surface modifiers. - Abstract: Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields.

  6. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    International Nuclear Information System (INIS)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo; Kim, Dong Rip

    2015-01-01

    Graphical abstract: - Highlights: • Cerium oxide nanorods were uniformly grown on diverse substrates. • Changes in growth conditions led to morphology evolution of cerium oxide nanostructures. • The grown cerium oxide nanostructures were single or poly crystalline. • Direct growth of cerium oxide nanorods made the diverse substrates superhydrophobic and anti-corrosive without any surface modifiers. - Abstract: Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields

  7. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  8. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  9. POLYPYRROLE COATED CELLULOSIC SUBSTRATE MODIFIED BY COPPER OXIDE AS ELECTRODE FOR NITRATE ELECTROREDUCTION

    OpenAIRE

    A. HAMAM; D. OUKIL; A. DIB; H. HAMMACHE; L. MAKHLOUFI; B. SAIDANI

    2015-01-01

    The aim of this work is to synthesize polypyrrole (PPy) films on nonconducting cellulosic substrate and modified by copper oxide particles for use in the nitrate electroreduction process. Firstly, the chemical polymerization of polypyrrole onto cellulosic substrate is conducted by using FeCl3 as an oxidant and pyrrole as monomer. The thickness and topography of the different PPy films obtained were estimated using a profilometer apparatus. The electrochemical reactivity of the obtained electr...

  10. Preparation of aluminum doped zinc oxide films with low resistivity and outstanding transparency by a sol–gel method for potential applications in perovskite solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xingyue; Shen, Heping; Zhou, Chen [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Lin, Shiwei [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Li, Xin [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Zhao, Xiaochong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907 (China); Deng, Xiangyun [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); College of Physics and Electronic Information, Tianjin, Normal University, Tianjin 300387 (China); Li, Jianbao [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Lin, Hong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China)

    2016-04-30

    Highly transparent and conductive aluminum doped zinc oxide (AZO) films were prepared by sol–gel method on the glass substrates. The effects of doping concentration, annealing temperature and facing direction during annealing on the structural, electrical and optical properties of AZO films were studied by performing a series of characterizations including X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis spectrophotometry, four-point probe method and Hall effect measurement system. The results showed that the AZO films were wurtzite crystallized with c-axis preferred orientation. A minimum resistivity of 1.8 × 10{sup −3} Ω cm and a transmittance above 90% were obtained for the film doped with 1.5 at.% aluminum, annealed at 510 °C and faced-down in the oven, which was among the best performance of the currently reported works based on sol–gel process. Moreover, energy level analysis revealed that the AZO film has a work function of 4.3 eV, exhibiting great potential in perovskite solar cell applications. - Highlights: • Highly transparent and conductive AZO films were prepared by sol–gel based process. • Different facing directions during annealing had effects on the carrier mobility. • Less aluminum ions at the grain boundary would favor the carrier transport. • The potential of AZO film in the perovskite solar cell application was discussed.

  11. Improved transparent-conducting properties in N2- and H2- annealed GaZnO thin films grown on glass substrates

    International Nuclear Information System (INIS)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon

    2012-01-01

    The effects of N 2 - and H 2 - annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of ∼10 0 Ω·cm and an optical transmittance of ∼86%. After annealing in N 2 or H 2 , the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H 2 -annealed sample, a dramatic decrease in the resistivity (7 x 10 -4 Ω·cm) with a considerable increase in the carrier concentration (4.22 x 10 21 cm -3 ) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H 2 annealing. The sample revealed an enhanced optical transmittance (∼91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H 2 -annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  12. Measuring the residual stress of transparent conductive oxide films on PET by the double-beam shadow Moiré interferometer

    Science.gov (United States)

    Chen, Hsi-Chao; Huang, Kuo-Ting; Lo, Yen-Ming; Chiu, Hsuan-Yi; Chen, Guan-Jhen

    2011-09-01

    The purpose of this research was to construct a measurement system which can fast and accurately analyze the residual stress of the flexible electronics. The transparent conductive oxide (TCO) films, tin-doped indium oxide (ITO), were deposited by radio frequency (RF) magnetron sputtering using corresponding oxide targets on PET substrate. As we know that the shadow Moiré interferometry is a useable way to measure the large deformation. So we set up a double beam shadow Moiré interferometer to measure and analyze the residual stress of TCO films on PET. The feature was to develop a mathematical model and combine the image processing software. By the LabVIEW graphical software, we could measure the distance which is between the left and right fringe on the pattern to solve the curvature of deformed surface. Hence, the residual stress could calculate by the Stoney correction formula for the flexible electronics. By combining phase shifting method with shadow Moiré, the measurement resolution and accuracy have been greatly improved. We also had done the error analysis for the system whose relative error could be about 2%. Therefore, shadow Moiré interferometer is a non-destructive, fast, and simple system for the residual stress on TCO/PET films.

  13. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  14. Sputtering characteristics, crystal structures, and transparent conductive properties of TiO{sub x}N{sub y} films deposited on {alpha}-Al{sub 2}O{sub 3}(0 0 0 1) and glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Reactive sputtering of TiO{sub x}N{sub y} films was achieved under metal-mode conditions. Black-Right-Pointing-Pointer Partially substituting O in TiO{sub 2} with N formed anatase rather than rutile. Black-Right-Pointing-Pointer TiO{sub 2-x}N{sub x} on Al{sub 2}O{sub 3}(0 0 0 1) was more transparent and conductive than on glass substrate. Black-Right-Pointing-Pointer Nb{sup 5+} ions could be doped as donors in TiO{sub 2-x}N{sub x} anatase crystals. - Abstract: Adding N{sub 2} gas during reactive sputtering of a Ti target prevented the target surface from being severely poisoned by oxygen atoms and sustained a high deposition rate for titanium oxynitride films under metal-mode-like sputtering conditions. With progress in the degree of oxidization, films deposited onto a glass substrate varied from TiO{sub 1-x}N{sub x} having a face-centered cubic (fcc) structure to TiO{sub 2-x}N{sub x} having an anatase structure. Titanium oxynitride films deposited on an Al{sub 2}O{sub 3}(0 0 0 1) substrate were epitaxial with major orientations toward the (1 1 1) and (2 0 0) directions for fcc-TiO{sub 1-x}N{sub x} and (1 1 2) for anatase-TiO{sub 2-x}N{sub x}. Intermediately oxidized films between TiO{sub 1-x}N{sub x} and TiO{sub 2-x}N{sub x} were amorphous on the glass substrate but crystallized into a Magneli phase, Ti{sub n}O(N){sub 2n-1}, on the Al{sub 2}O{sub 3}(0 0 0 1) substrate. Partially substituting oxygen in TiO{sub 2} with nitrogen as well as continuously irradiating the growing film surface with a Xe plasma stream preferentially formed anatase rather than rutile. However, the occupation of anion sites with enough oxygen rather than nitrogen was the required condition for anatase crystals to form. The transparent conductive properties of epitaxial TiO{sub 2-x}N{sub x} films on Al{sub 2}O{sub 3}(0 0 0 1) were superior to those of microcrystalline films on the glass substrate. Since resistivity and optical transmittance of Ti

  15. Interfacial Interaction of Oxidatively Cured Hydrogen Silsesquioxane Spin-On-Glass Enamel with Stainless Steel Substrate

    DEFF Research Database (Denmark)

    Lampert, Felix; Kadkhodazadeh, Shima; Jensen, Annemette H.

    2017-01-01

    interfacial duplex-oxide with an outer zone composed of Fe2O3 in a SiO2-x matrix and an inner zone composed of complex (Cr3+,Fe2+,Mn2+)-oxides. Moreover, a Cr depletion of the substrate in the immediate vicinity of the surface was observed. It was concluded that the interfacial formation is controlled...

  16. Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

    Science.gov (United States)

    Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

    2017-11-01

    Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

  17. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  18. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    Science.gov (United States)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo; Kim, Dong Rip

    2015-06-01

    Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields.

  19. The critical oxide thickness for Pb-free reflow soldering on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chung, C. Key [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan (China); Assembly Test Global Materials, Intel Microelectronics Asia Ltd, B1, No. 205, Tun-Hwa North Road, 10595 Taipei, Taiwan (China); Chen, Y.J.; Li, C.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan (China); Kao, C.R., E-mail: crkao@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan (China)

    2012-06-01

    Oxidation is an undesirable effect of reflow soldering. Non-wetting occurs when the oxide layer grows above the critical thickness. Characterizing the critical oxide thickness for soldering is challenging due to oxide's nano-scale thickness and irregular topographic surface. In this paper, the critical copper oxide thickness was characterized by Time-of-Flight Secondary Ion Mass Spectrometry, Scanning Electron Microscopy, Energy-Dispersive X-ray spectroscopy, and Transmission Electron Microscopy. Copper substrates were coated with an Organic-Solderable-Preservative (OSP) layer and baked at 150 Degree-Sign C and 85% Relative Humidity for different amounts of time. The onset of the non-wetting phenomenon occurred when the oxide thickness reached 18 {+-} 5 nm. As the oxide grew beyond this critical thickness, the percentage of non-wetting solder joint increased exponentially. The growth of the oxide thickness followed a parabolic rate law. The rate constant of oxidation was 0.6 Multiplication-Sign 10{sup -15} cm{sup 2} min{sup -1}. Oxidation resulted from interdiffusion of copper and oxygen atoms through the OSP and oxide layers. The oxidation mechanism will be presented and discussed. - Highlights: Black-Right-Pointing-Pointer Critical oxide thickness for Pb free solder on Cu substrate is 18 {+-} 5 nm. Black-Right-Pointing-Pointer Above the critical oxide, non-wet solder joint increases exponentially. Black-Right-Pointing-Pointer A maximum 13-nm oxide thickness is suggested for good solder joint. Black-Right-Pointing-Pointer Initial growth of oxide thickness is logarithmic and then parabolic after 12 nm. Black-Right-Pointing-Pointer Thick oxide (360-560 nm) is formed as pores shorten the oxidation path.

  20. Rare earth zirconium oxide buffer layers on metal substrates

    Science.gov (United States)

    Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

    2001-01-01

    A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  1. Laser welding of nanoparticulate TiO2 and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

    International Nuclear Information System (INIS)

    Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu

    2010-01-01

    Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO 2 electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO 2 films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO 2 . Electron microscopy analysis and impedance measurements showed that a thin continuous TiO 2 layer is formed at the interface as a result of the local melting of TiO 2 nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO 2 paste revealed an efficiency improvement from η = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO 2 electrodes made from a commercial paste.

  2. Laser welding of nanoparticulate TiO{sub 2} and transparent conducting oxide electrodes for highly efficient dye-sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jinsoo; Kim, Jonghyun; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2010-08-27

    Poor interfacial contact is often encountered in nanoparticulate film-based devices. The dye-sensitized solar cell (DSSC) is a representative case in which a nanoporous TiO{sub 2} electrode needs to be prepared on the transparent conducting oxide (TCO)-coated glass substrate. In this study, we demonstrate that the inter-electrode contact resistance accounts for a considerable portion of the total resistance of a DSSC and its efficiency can be greatly enhanced by welding the interface with a laser. TiO{sub 2} films formed on the TCO-coated glass substrate were irradiated with a pulsed ultraviolet laser beam at 355 nm; this transmits through the TCO and glass but is strongly absorbed by TiO{sub 2}. Electron microscopy analysis and impedance measurements showed that a thin continuous TiO{sub 2} layer is formed at the interface as a result of the local melting of TiO{sub 2} nanoparticles and this layer completely bridges the gap between the two electrodes, improving the current flow with a reduced contact resistance. We were able to improve the efficiency by 35-65% with this process. DSSCs fabricated using a homemade TiO{sub 2} paste revealed an efficiency improvement from {eta} = 3.3% to 5.4%, and an increase from 8.2% to 11.2% was achieved with the TiO{sub 2} electrodes made from a commercial paste.

  3. A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

    International Nuclear Information System (INIS)

    Keshmiri, S.H.; Roknabadi, M.R.

    1999-01-01

    Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

  4. Water based, solution-processable, transparent and flexible graphene oxide composite as electrodes in organic solar cell application

    International Nuclear Information System (INIS)

    Lima, L F; Matos, C F; Gonçalves, L C; Roman, L S; Salvatierra, R V; Zarbin, A J G; Cava, C E

    2016-01-01

    In this work we propose an easy method to achieve a conductive, transparent and flexible graphene oxide (GO)-based composite thin film from an aqueous dispersion. We investigated the blend ratio between GO and the conjugated polymer poly(3,4–ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) by comparing the thin film optical transmittance, sheet resistance, morphology and mechanical stability. It was found that reasonable values of transmittance and resistivity coupled with its excellent flexibility – the conductivity remains almost the same even after 1000 bends cycles – make this composite very attracting for flexible optoelectronic applications. Thus, these films were used as transparent electrodes in a bilayer structured organic solar cell and the device architecture PET/GO:PEDOT/F8T2/C 60 /Al could reach a power conversion efficiency around 1.10%. This result presents a better performance compared with pristine PEDOT produced with similar parameters. (paper)

  5. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  6. Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms.

    Science.gov (United States)

    Schmidt, Igor; Gad, Alaaeldin; Scholz, Gregor; Boht, Heidi; Martens, Michael; Schilling, Meinhard; Suryo Wasisto, Hutomo; Waag, Andreas; Schröder, Uwe

    2017-08-15

    Microbial electrochemical technologies (METs) are one of the emerging green bioenergy domains that are utilizing microorganisms for wastewater treatment or electrosynthesis. Real-time monitoring of bioprocess during operation is a prerequisite for understanding and further improving bioenergy harvesting. Optical methods are powerful tools for this, but require transparent, highly conductive and biocompatible electrodes. Whereas indium tin oxide (ITO) is a well-known transparent conductive oxide, it is a non-ideal platform for biofilm growth. Here, a straightforward approach of surface modification of ITO anodes with gold (Au) is demonstrated, to enhance direct microbial biofilm cultivation on their surface and to improve the produced current densities. The trade-off between the electrode transmittance (critical for the underlying integrated sensors) and the enhanced growth of biofilms (crucial for direct monitoring) is studied. Au-modified ITO electrodes show a faster and reproducible biofilm growth with three times higher maximum current densities and about 6.9 times thicker biofilms compared to their unmodified ITO counterparts. The electrochemical analysis confirms the enhanced performance and the reversibility of the ITO/Au electrodes. The catalytic effect of Au on the ITO surface seems to be the key factor of the observed performance improvement since the changes in the electrode conductivity and their surface wettability are relatively small and in the range of ITO. An integrated platform for the ITO/Au transparent electrode with light-emitting diodes was fabricated and its feasibility for optical biofilm thickness monitoring is demonstrated. Such transparent electrodes with embedded catalytic metals can serve as multifunctional windows for biofilm diagnostic microchips. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process

    International Nuclear Information System (INIS)

    Park, Yong-Seok; Kim, Han-Ki; Jeong, Soon-Wook; Cho, Woon-Jo

    2010-01-01

    We have investigated the characteristics of flexible indium zinc oxide (IZO) electrode grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll (RTR) sputtering system for use in flexible optoelectronics. It was found that both electrical and optical properties of the flexible IZO electrode were critically dependent on the DC power and Ar/O 2 flow ratio during the roll-to-roll sputtering process. At optimized conditions (constant working pressure of 3 mTorr, Ar/O 2 flow ratio of Ar at only 30 sccm, DC power 800 W and rolling speed at 0.1 cm/s) the flexible IZO electrode exhibits a sheet resistance of 17.25 Ω/sq and an optical transmittance of 89.45% at 550 nm wavelength. Due to the low PET substrate temperature, which is effectively maintained by cooling drum system, all IZO electrodes showed an amorphous structure regardless of the DC power and Ar/O 2 flow ratio. Furthermore, the IZO electrodes grown at optimized condition exhibited superior flexibility than the conventional amorphous ITO electrodes due to its stable amorphous structure. This indicates that the RTR sputter grown IZO electrode is a promising flexible electrode that can substitute for the conventional ITO electrode, due to its low resistance, high transparency, superior flexibility and fast preparation by the RTR process.

  8. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1996-01-01

    A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

  9. Silver-Nanowire-Embedded Transparent Metal-Oxide Heterojunction Schottky Photodetector.

    Science.gov (United States)

    Abbas, Sohail; Kumar, Mohit; Kim, Hong-Sik; Kim, Joondong; Lee, Jung-Ho

    2018-05-02

    We report a self-biased and transparent Cu 4 O 3 /TiO 2 heterojunction for ultraviolet photodetection. The dynamic photoresponse improved 8.5 × 10 4 % by adding silver nanowires (AgNWs) Schottky contact and maintaining 39% transparency. The current density-voltage characteristics revealed a strong interfacial electric field, responsible for zero-bias operation. In addition, the dynamic photoresponse measurement endorsed the effective holes collection by embedded-AgNWs network, leading to fast rise and fall time of 0.439 and 0.423 ms, respectively. Similarly, a drastic improvement in responsivity and detectivity of 187.5 mAW -1 and of 5.13 × 10 9 Jones, is observed, respectively. The AgNWs employed as contact electrode can ensure high-performance for transparent and flexible optoelectronic applications.

  10. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    Directory of Open Access Journals (Sweden)

    Robert Kucharski

    2017-06-01

    Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

  11. Complete coverage of reduced graphene oxide on silicon dioxide substrates

    International Nuclear Information System (INIS)

    Jingfeng Huang; Hu Chen; Yoong Alfred Tok Iing; Larisika, Melanie; Nowak, Christoph; Faulkner, Steve; Nimmo, Myra A.

    2014-01-01

    Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices. (special topic — international conference on nanoscience and technology, china 2013)

  12. Oxidative Attack of Carbon/Carbon Substrates through Coating Pinholes

    Science.gov (United States)

    Jacobson, Nathan S.; Leonhardt, Todd; Curry, Donald; Rapp, Robert A.

    1998-01-01

    A critical issue with oxidation protected carbon/carbon composites used for spacecraft thermal protection is the formation of coating pinholes. In laboratory experiments, artificial pinholes were drilled through SiC-coatings on a carbon/carbon material and the material was oxidized at 600, 1000, and 1400 C at reduced pressures of air. The attack of the carbon/carbon was quantified by both weight loss and a novel cross-sectioning technique. A two-zone, one dimensional diffusion control model was adapted to analyze this problem. Agreement of the model with experiment was reasonable at 1000 and 1400 C; however results at lower temperatures show clear deviations from the theory suggesting that surface reaction control plays a role.

  13. Deposition of an Ultraflat Graphene Oxide Nanosheet on Atomically Flat Substrates

    Science.gov (United States)

    Khan, M. Z. H.; Shahed, S. M. F.; Yuta, N.; Komeda, T.

    2017-07-01

    In this study, graphene oxide (GO) sheets produced in the form of stable aqueous dispersions were deposited on Au (111), freshly cleaved mica, and highly oriented pyrolytic graphite (HOPG) substrates. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to study the presence and distinct contact of GO sheets on the substrates. It was revealed from the topography images that high-quality ultraflat GO monolayer sheets formed on the substrates without distinct cracking/wrinkling or folding. GO sheets with apparent height variation observed by microscopy also indicate ultraflat deposition with clear underlying steps. It was observed that ultrasonication and centrifuge steps prior to deposition were very effective for getting oxidation debris (OD)-free ultraflat single monolayer GO nanosheets onto substrates and that the process depends on the concentration of supplied GO solutions.

  14. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    International Nuclear Information System (INIS)

    Asoh, Hidetaka; Uchibori, Kota; Ono, Sachiko

    2009-01-01

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  15. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Asoh, Hidetaka [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)], E-mail: asoh@cc.kogakuin.ac.jp; Uchibori, Kota; Ono, Sachiko [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

    2009-07-15

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  16. Improved transparent-conducting properties in N{sub 2{sup -}} and H{sub 2{sup -}} annealed GaZnO thin films grown on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of)

    2012-01-15

    The effects of N{sub 2{sup -}} and H{sub 2{sup -}} annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of {approx}10{sup 0} {Omega}{center_dot}cm and an optical transmittance of {approx}86%. After annealing in N{sub 2} or H{sub 2}, the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H{sub 2}-annealed sample, a dramatic decrease in the resistivity (7 x 10{sup -4} {Omega}{center_dot}cm) with a considerable increase in the carrier concentration (4.22 x 10{sup 21} cm{sup -3}) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H{sub 2} annealing. The sample revealed an enhanced optical transmittance ({approx}91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H{sub 2}-annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  17. Studies on e-beam deposited transparent conductive films of In/sub 2/O/sub 3/ - Sn at moderate substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Agnihotry, S.A.; Saini, K.K.; Saxena, T.K.; Nagpal, K.C.; Chandra, S.

    1985-10-01

    An electron beam evaporation method is used to prepare In/sub 2/O/sub 3/ films with and without Sn doping. It is shown that highly transparent and conducting films can be prepared at substrate temperature as low as 200 C. The characteristic feature of such films is their high carrier density and high infrared reflectivity. The lowest resistivity is found to be 0.00024 ohm cm with a carrier concentration of 8 x 10 to the 20th per cu cm and mobility of about 30 per cm/V s at the doping level of 4 mol percent SnO/sub 2/. These polycrystalline films show a highly preferred orientation. On the basis of Hall measurements and structural data, sources of scattering in these films are suggested. 29 references.

  18. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung

    2012-05-22

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

  19. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  20. Synthetic polymeric substrates as potent pro-oxidant versus anti-oxidant regulators of cytoskeletal remodeling and cell apoptosis.

    Science.gov (United States)

    Sung, Hak-Joon; Chandra, Prafulla; Treiser, Matthew D; Liu, Er; Iovine, Carmine P; Moghe, Prabhas V; Kohn, Joachim

    2009-03-01

    The role of reactive oxygen species (ROS)-mediated cell signal transduction pathways emanating from engineered cell substrates remains unclear. To elucidate the role, polymers derived from the amino acid L-tyrosine were used as synthetic matrix substrates. Variations in their chemical properties were created by co-polymerizing hydrophobic L-tyrosine derivatives with uncharged hydrophilic poly(ethylene glycol) (PEG, Mw = 1,000 Da), and negatively charged desaminotyrosyl-tyrosine (DT). These substrates were characterized for their intrinsic ability to generate ROS, as well as their ability to elicit Saos-2 cell responses in terms of intracellular ROS production, actin remodeling, and apoptosis. PEG-containing substrates induced both exogenous and intracellular ROS production, whereas the charged substrates reduced production of both types, indicating a coupling of exogenous ROS generation and intracellular ROS production. Furthermore, PEG-mediated ROS induction caused nuclear translocation of glyceraldehyde-3-phosphate dehydrogenase and an increase in caspase-3 activity, confirming a link with apoptosis. PEG-rich pro-oxidant substrates caused cytoskeletal actin remodeling through beta-actin cleavage by caspase-3 into fractins. The fractins co-localized to the mitochondria and reduced the mitochondrial membrane potential. The remnant cytosolic beta-actin was polymerized and condensed, events consistent with apoptotic cell shrinkage. The cytoskeletal remodeling was integral to the further augmentation of intracellular ROS production. Conversely, the anti-oxidant DT-containing charged substrates suppressed the entire cascade of apoptotic progression. We demonstrate that ROS activity serves an important role in "outside-in" signaling for cells grown on substrates: the ROS activity couples exogenous stress, driven by substrate composition, to changes in intracellular signaling. This signaling causes cell apoptosis, which is mediated by actin remodeling.

  1. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

    OpenAIRE

    Robert Kucharski; Łukasz Janicki; Marcin Zajac; Monika Welna; Marcin Motyka; Czesław Skierbiszewski; Robert Kudrawiec

    2017-01-01

    GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-in...

  2. [Oxidation of sulfur-containing substrates by aboriginal and experimentally designed microbial communities].

    Science.gov (United States)

    Pivovarova, T A; Bulaev, A G; Roshchupko, P V; Belyĭ, A V; Kondrat'eva, T F

    2012-01-01

    Aboriginal and experimental (constructed of pure microbial cultures) communities of acidophilic chemolithotrophs have been studied. The oxidation of elemental sulfur, sodium thiosulfate, and potassium tetrathionate as sole sources of energy has been monitored. The oxidation rate of the experimental community is higher as compared to the aboriginal community isolated from a flotation concentrate of pyrrhotine-containing pyrite-arsenopyrite gold-arsenic sulfide ore. The degree of oxidation of the mentioned S substrates amounts to 17.91, 68.30, and 93.94% for the experimental microbial community and to 10.71, 56.03, and 79.50% for the aboriginal community, respectively. The degree of oxidation of sulfur sulfide forms in the ore flotation concentrate is 59.15% by the aboriginal microbial community and 49.40% by the experimental microbial community. Despite a higher rate of oxidation of S substrates as a sole source of energy by the experimental microbial community, the aboriginal community oxidizes S substrates at a higher rate in the flotation concentrate of pyrrhotine-containing pyrite-arsenopyrite gold-arsenic sulfide ore, from which it was isolated. Bacterial-chemical oxidation of the flotation concentrate by the aboriginal microbial community allows for the extraction of an additional 32.3% of gold from sulfide minerals, which is by 5.7% larger compared to the yield obtained by the experimental microbial community.

  3. Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

    Science.gov (United States)

    Liu, Yu-Lun; Yu, Chen-Chieh; Lin, Keng-Te; Yang, Tai-Chi; Wang, En-Yun; Chen, Hsuen-Li; Chen, Li-Chyong; Chen, Kuei-Hsien

    2015-05-26

    In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.

  4. Transparent front contact optimization in dye sensitized solar cells: use of cadmium stannate and titanium oxide by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Braga, A., E-mail: antonio.braga@iit.it [CNR-IDASC SENSOR Lab and Department of Chemistry and Physics, Brescia University, Via Valotti 9, 25131 Brescia (Italy); Baratto, C. [CNR-IDASC SENSOR Lab and Department of Chemistry and Physics, Brescia University, Via Valotti 9, 25131 Brescia (Italy); Bontempi, E. [INSTM and Chemistry for Technologies Laboratory, University of Brescia, Via Branze 28, 25133 Brescia (Italy); Colombi, P. [Centro Coating C.S.M.T. Gestione S.c.a.r.l., Via Branze, 45 25123 Brescia (Italy); Sberveglieri, G. [CNR-IDASC SENSOR Lab and Department of Chemistry and Physics, Brescia University, Via Valotti 9, 25131 Brescia (Italy)

    2014-03-31

    A reliable transparent front contact of cadmium stannate (CTO) and titanium oxide (TiO{sub 2}) entirely deposited by magnetron sputtering has been studied and applied to build standard dye-sensitized solar cell. CTO gives very high average optical transmittance (T{sub avg} ≥ 90%) along with competitive sheet resistance (R{sub sheet} ≤ 15 Ω/sq), while a very thin layer of TiO{sub 2} (thickness < 5 nm) acts as buffer layer to prevent charge recombination. The matched materials allow achievement of good performances of the cells, in terms of short circuit current and power conversion efficiency. UV-visible spectrophotometry, glancing incident X-rays diffraction and X-rays reflectivity techniques were used to characterize thin films before cell realization; sealed solar cells were tested under simulated solar irradiance at 1 Sun to determine functional properties. - Highlights: • Double layer cadmium stannate–TiO{sub 2} transparent front contact by sputtering. • Very thin TiO{sub 2} buffer layer for charge recombination prevention. • Application of novel transparent contact in standard dye sensitized solar cells.

  5. Transparent front contact optimization in dye sensitized solar cells: use of cadmium stannate and titanium oxide by sputtering

    International Nuclear Information System (INIS)

    Braga, A.; Baratto, C.; Bontempi, E.; Colombi, P.; Sberveglieri, G.

    2014-01-01

    A reliable transparent front contact of cadmium stannate (CTO) and titanium oxide (TiO 2 ) entirely deposited by magnetron sputtering has been studied and applied to build standard dye-sensitized solar cell. CTO gives very high average optical transmittance (T avg ≥ 90%) along with competitive sheet resistance (R sheet ≤ 15 Ω/sq), while a very thin layer of TiO 2 (thickness < 5 nm) acts as buffer layer to prevent charge recombination. The matched materials allow achievement of good performances of the cells, in terms of short circuit current and power conversion efficiency. UV-visible spectrophotometry, glancing incident X-rays diffraction and X-rays reflectivity techniques were used to characterize thin films before cell realization; sealed solar cells were tested under simulated solar irradiance at 1 Sun to determine functional properties. - Highlights: • Double layer cadmium stannate–TiO 2 transparent front contact by sputtering. • Very thin TiO 2 buffer layer for charge recombination prevention. • Application of novel transparent contact in standard dye sensitized solar cells

  6. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    Science.gov (United States)

    2016-03-30

    30 Mar 2016. This document contains color . Journal article published in Optical Interference Coatings, 19 Jun 2016. © 2016 Optical Society of...Ahn, Mi-So Lee, Moon-Ho Ham , Woong Lee, Jae-Min Myoung, “Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive

  7. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  8. New Transparent Laser-Drilled Fluorine-doped Tin Oxide covered Quartz Electrodes for Photo-Electrochemical Water Splitting

    International Nuclear Information System (INIS)

    Hernández, Simelys; Tortello, Mauro; Sacco, Adriano; Quaglio, Marzia; Meyer, Toby; Bianco, Stefano; Saracco, Guido; Pirri, C. Fabrizio; Tresso, Elena

    2014-01-01

    Graphical abstract: - Highlights: • A new transparent, conductive and porous electrode was developed. • It has a high effective surface area available for catalyst molecules attachment. • It is an ideal support for testing new anodic and cathodic photoactive materials. • The proof-of-concept was achieved in an appositely designed water photo-electrolyzer. • The EIS technique was used as a very powerful tool to characterize the new designed electrode. - Abstract: A new-designed transparent, conductive and porous electrode was developed for application in a compact laboratory-scale proton exchange membrane (PEM) photo-electrolyzer. The electrode is made of a thin transparent quartz sheet covered with fluorine-doped tin oxide (FTO), in which an array of holes is laser-drilled to allow water and gas permeation. The electrical, morphological, optical and electrochemical characterization of the drilled electrodes is presented in comparison with a non-drilled one. The drilled electrode exhibits, in the visible region, a good transmittance (average value of 62%), a noticeable reflectance due to the light scattering effect of the hole-drilled internal region, and a higher effective surface area than the non-drilled electrode. The proof-of-concept of the applicability of the drilled electrode was achieved by using it as a support for a traditional photocatalyst (i.e. commercial TiO 2 nanoparticles). The latter, coupled with a polymeric electrolyte membrane (i.e.Nafion 117) and a Pt counter electrode, forms a transparent membrane electrode assembly (MEA), with a good conductivity, wettability and porosity. Electrochemical impedance spectroscopy (EIS) was used as a very powerful tool to gain information on the real active surface of the new drilled electrode and the main electrochemical parameters driving the charge transfer reactions on it. This new electrode architecture is demonstrated to be an ideal support for testing new anodic and cathodic photoactive

  9. Toward Plastic Smart Windows: Optimization of Indium Tin Oxide Electrodes for the Synthesis of Electrochromic Devices on Polycarbonate Substrates.

    Science.gov (United States)

    Laurenti, Marco; Bianco, Stefano; Castellino, Micaela; Garino, Nadia; Virga, Alessandro; Pirri, Candido F; Mandracci, Pietro

    2016-03-01

    Plastic smart windows are becoming one of the key elements in view of the fabrication of inexpensive, lightweight electrochromic (EC) devices to be integrated in the new generation of high-energy-efficiency buildings and automotive applications. However, fabricating electrochromic devices on polymer substrates requires a reduction of process temperature, so in this work we focus on the development of a completely room-temperature deposition process aimed at the preparation of ITO-coated polycarbonate (PC) structures acting as transparent and conductive plastic supports. Without providing any substrate heating or surface activation pretreatments of the polymer, different deposition conditions are used for growing indium tin oxide (ITO) thin films by the radiofrequency magnetron sputtering technique. According to the characterization results, the set of optimal deposition parameters is selected to deposit ITO electrodes having high optical transmittance in the visible range (∼90%) together with low sheet resistance (∼8 ohm/sq). The as-prepared ITO/PC structures are then successfully tested as conductive supports for the fabrication of plastic smart windows. To this purpose, tungsten trioxide thin films are deposited by the reactive sputtering technique on the ITO/PC structures, and the resulting single electrode EC devices are characterized by chronoamperometric experiments and cyclic voltammetry. The fast switching response between colored and bleached states, together with the stability and reversibility of their electrochromic behavior after several cycling tests, are considered to be representative of the high quality of the EC film but especially of the ITO electrode. Indeed, even if no adhesion promoters, additional surface activation pretreatments, or substrate heating were used to promote the mechanical adhesion among the electrode and the PC surface, the observed EC response confirmed that the developed materials can be successfully employed for the

  10. Laser-induced oxidation of titanium substrate: Analysis of the physicochemical structure of the surface and sub-surface layers

    Energy Technology Data Exchange (ETDEWEB)

    Antończak, Arkadiusz J., E-mail: arkadiusz.antonczak@pwr.edu.pl [Laser and Fiber Electronics Group, Faculty of Electrical Engineering, Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw (Poland); Skowroński, Łukasz; Trzcinski, Marek [Institute of Mathematics and Physics, University of Technology and Life Sciences, Kaliskiego 7, 85-789 Bydgoszcz (Poland); Kinzhybalo, Vasyl V. [Wroclaw Research Centre EIT+, Stabłowicka 147, 54-066 Wrocław (Poland); Institute of Low Temperature and Structure Research, Okólna 2, 50-422 Wrocław (Poland); Łazarek, Łukasz K.; Abramski, Krzysztof M. [Laser and Fiber Electronics Group, Faculty of Electrical Engineering, Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-01-15

    Highlights: • Chemical structure of the films induced by laser on titanium surface was analyzed. • It was shown that outer layer of this films consist of oxides doped with nitrogen. • The optical properties of the laser-induced oxynitride films were characterized. • We found that the films demonstrated significant absorption in the band of 300–580 nm. • The morphology of the layers as a function of the laser fluence was investigated. - Abstract: This paper presents the results of the analysis of the complex chemical structure of the layers made on titanium in the process of the heating of its surfaces in an atmospheric environment, by irradiating samples with a nanosecond-pulsed laser. The study was carried out for electroplated, high purity, polycrystalline titanium substrates using a Yb:glass fiber laser. All measurements were made for samples irradiated in a broad range of accumulated fluence, below the ablation threshold. It has been determined how the complex index of refraction of both the oxynitride layers and the substrate vary as a function of accumulated laser fluence. It was also shown that the top layer of the film produced on titanium, which is transparent, is not a pure TiO{sub 2} as had been supposed before. The XPS and XRD analyses confirmed the presence of nitrogen compounds and the existence of nonstoichiometric compounds. By sputtering of the sample's surface using an Ar{sup +} ion gun, the changes in the concentration of individual elements as a function of the layer's cross-section were determined. Lastly, an analysis of the surface morphology has also been carried out, explaining why the layers crack and exfoliate from their substrate.

  11. (-201) β-Gallium oxide substrate for high quality GaN materials

    KAUST Repository

    Roqan, Iman S.

    2015-03-13

    (-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

  12. Sites of reactive oxygen species generation by mitochondria oxidizing different substrates

    Directory of Open Access Journals (Sweden)

    Casey L. Quinlan

    2013-01-01

    Full Text Available Mitochondrial radical production is important in redox signaling, aging and disease, but the relative contributions of different production sites are poorly understood. We analyzed the rates of superoxide/H2O2 production from different defined sites in rat skeletal muscle mitochondria oxidizing a variety of conventional substrates in the absence of added inhibitors: succinate; glycerol 3-phosphate; palmitoylcarnitine plus carnitine; or glutamate plus malate. In all cases, the sum of the estimated rates accounted fully for the measured overall rates. There were two striking results. First, the overall rates differed by an order of magnitude between substrates. Second, the relative contribution of each site was very different with different substrates. During succinate oxidation, most of the superoxide production was from the site of quinone reduction in complex I (site IQ, with small contributions from the flavin site in complex I (site IF and the quinol oxidation site in complex III (site IIIQo. However, with glutamate plus malate as substrate, site IQ made little or no contribution, and production was shared between site IF, site IIIQo and 2-oxoglutarate dehydrogenase. With palmitoylcarnitine as substrate, the flavin site in complex II (site IIF was a major contributor (together with sites IF and IIIQo, and with glycerol 3-phosphate as substrate, five different sites all contributed, including glycerol 3-phosphate dehydrogenase. Thus, the relative and absolute contributions of specific sites to the production of reactive oxygen species in isolated mitochondria depend very strongly on the substrates being oxidized, and the same is likely true in cells and in vivo.

  13. Molecular beacon anchored onto a graphene oxide substrate

    Science.gov (United States)

    Darbandi, Arash; Datta, Debopam; Patel, Krunal; Lin, Gary; Stroscio, Michael A.; Dutta, Mitra

    2017-09-01

    In this article, we report a graphene oxide-based nanosensor incorporating semiconductor quantum dots linked to DNA-aptamers that functions as a ‘turn-off’ fluorescent nanosensor for detection of low concentrations of analytes. A specific demonstration of this turn-off aptasensor is presented for the case of the detection of mercury (II) ions. In this system, ensembles of aptamer-based quantum-dot sensors are anchored onto graphene oxide (GO) flakes which provide a platform for analyte detection in the vicinity of GO. Herein, the operation of this ensemble-based nanosensor is demonstrated for mercury ions, which upon addition of mercury, quenching of the emission intensity from the quantum dots is observed due to resonance energy transfer between quantum dots and the gold nanoparticle connected via a mercury target aptamer. A key result is that the usually dominant effect of quenching of the quantum dot due to close proximity to the GO can be reduced to negligible levels by using a linker molecule in conjunctions with the aptamer-based nanosensor. The effect of ionic concentration of the background matrix on the emission intensity was also investigated. The sensor system is found to be highly selective towards mercury and exhibits a linear behavior (r 2 > 0.99) in the nanomolar concentration range. The detection limit of the sensor towards mercury with no GO present was found to be 16.5 nM. With GO attached to molecular beacon via 14 base, 35 base, and 51 base long linker DNA, the detection limit was found to be 38.4 nM, 9.45 nM, and 11.38 nM; respectively.

  14. Study of reactivities of electro-catalytic oxidation of organic substrates with Ru(IV) complex

    International Nuclear Information System (INIS)

    Madurro, J.M.; Oliveira, S.M. de; Campos, J.L.

    1988-01-01

    An electrocatalytic procedure for the oxidation of olefines, ketones, heterocycles and ethers using the Ru IV oxidant RuO (bpy) (trpy) 2+ (bpy is 2,2 - bipyridine; trpy is 2,2', 2''' - terpyridine), is described. The relative reactivities of the substrates are determined by analysis of the exponential i x t curves, using simple linear and exponential least-square programme. Mechanistics considerations based on the observed relative reactivities are discussed. (M.J.C.) [pt

  15. Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

    2017-04-15

    Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

  16. Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

    Science.gov (United States)

    Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

    2017-05-31

    Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

  17. Thermal oxidation of seeds for the hydrothermal growth of WO3 nanorods on ITO glass substrate

    International Nuclear Information System (INIS)

    Ng, Chai Yan; Abdul Razak, Khairunisak; Lockman, Zainovia

    2015-01-01

    This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO 3 ) nanorods. A WO 3 seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm −2 ) than compact film (lower current density of − 0.54 and + 0.28 mA cm −2 ). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO 3 nanorods exhibited higher electrochromic current density than WO 3 compact film.

  18. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  19. The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

    International Nuclear Information System (INIS)

    Irvine, S.J.C.; Lamb, D.A.; Barrioz, V.; Clayton, A.J.; Brooks, W.S.M.; Rugen-Hankey, S.; Kartopu, G.

    2011-01-01

    A systematic study is made between the relationship of Cd 0.9 Zn 0.1 S/CdTe photovoltaic (PV) device properties for three different commercial transparent conducting oxide (TCO) materials and some experimental CdO to determine the role of the TCO in device performance. The resistance contribution from the TCO was measured after depositing the gold contact architectures directly onto the TCOs. These were compared with the Cd 0.9 Zn 0.1 S/CdTe device properties using the same contact arrangements. Series resistance for the commercial TCOs correlated with their sheet resistance and gave good agreement with the PV device series resistance for the indium tin oxide (ITO) and fluorine doped tin oxide (FTO) 15 Ω/Sq. superstrates. The devices on the thicker FTO 7 Ω/sq superstrates were dominated by a low shunt resistance, which was attributed to the rough surface morphology causing micro-shorts. The device layers on the CdO substrate delaminated but devices were successfully made for ultra-thin CdTe (0.8 μm thick) and compared favourably with the comparable device on ITO. From the measurements on these TCOs it was possible to deduce the back contact resistance and gave an average value of 2 Ω.cm 2 . The correlation of fill factor with series resistance has been compared with the predictions of a 1-D device model and shows excellent agreement. For high efficiency devices the combined series resistance from the TCO and back contact need to be less than 1 Ω.cm 2 .

  20. The effect of body weight changes and endurance training on 24 h substrate oxidation

    NARCIS (Netherlands)

    Pasman, W.J.; Muls, G.; Vansant, G.; Westerterp-Plantenga, M.S.; Saris, W.H.M.

    1999-01-01

    OBJECTIVE: To investigate the effect of exercise training and dietary macronutrient composition on 24 h substrate oxidation in male, obese subjects. DESIGN: A 16 month exercise intervention study was executed, including a weight loss period with a very low energy diet (VLED) for 2 months at the

  1. Copper and CuNi alloys substrates for HTS coated conductor applications protected from oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Segarra, M; Diaz, J; Xuriguera, H; Chimenos, J M; Espiell, F [Dept. of Chemical Engineering and Metallurgy, Univ. of Barcelona, Barcelona (Spain); Miralles, L [Lab. d' Investigacio en Formacions Geologiques. Dept. of Petrology, Geochemistry and Geological Prospecting, Univ. of Barcelona, Barcelona (Spain); Pinol, S [Inst. de Ciencia de Materials de Barcelona, Bellaterra (Spain)

    2003-07-01

    Copper is an interesting substrate for HTS coated conductors for its low cost compared to other metallic substrates, and for its low resistivity. Nevertheless, mechanical properties and resistance to oxidation should be improved in order to use it as substrate for YBCO deposition by non-vacuum techniques. Therefore, different cube textured CuNi tapes were prepared by RABIT as possible substrates for deposition of high critical current density YBCO films. Under the optimised conditions of deformation and annealing, all the studied CuNi alloys (2%, 5%, and 10% Ni) presented (100) left angle 001 right angle cube texture which is compatible for YBCO deposition. Textured CuNi alloys present higher tensile strength than pure copper. Oxidation resistance of CuNi tapes under different oxygen atmospheres was also studied by thermogravimetric analysis and compared to pure copper tapes. Although the presence of nickel improves mechanical properties of annealed copper, it does not improve its oxidation resistance. However, when a chromium buffer layer is electrodeposited on the tape, oxygen diffusion is slowed down. Chromium is, therefore, useful for protecting copper and CuNi alloys from oxidation although its recrystallisation texture, (110), is not suitable for coated conductors. (orig.)

  2. The effect of body weight changes and endurance training on 24h substrate oxidation

    NARCIS (Netherlands)

    Pasman, W.J.; Westerterp-Plantenga, M.S.; Saris, W.H.M.

    1999-01-01

    The effect of body weight changes and endurance training on 24h substrate oxidation. Pasman WJ, Westerterp MS, Saris WH. Maastricht University, Department of Human Biology, The Netherlands. Pasman@voeding.tno.nl OBJECTIVE: To investigate the effect of exercise training and dietary macronutrient

  3. Influence of substrates on nitrogen removal performance and microbiology of anaerobic ammonium oxidation by operating two UASB reactors fed with different substrate levels

    International Nuclear Information System (INIS)

    Tang Chongjian; Zheng Ping; Hu Baolan; Chen Jianwei; Wang Caihua

    2010-01-01

    Both ammonium and nitrite act as substrates as well as potential inhibitors of anoxic ammonium-oxidizing (Anammox) bacteria. To satisfy demand of substrates for Anammox bacteria and to prevent substrate inhibition simultaneously; two strategies, namely high or low substrate concentration, were carefully compared in the operation of two Anammox upflow anaerobic sludge blanket (UASB) reactors fed with different substrate concentrations. The reactor working at relatively low influent substrate concentration (NO 2 - N, 240 mg-N L -1 ) was shown to avoid the inhibition caused by nitrite and free ammonia. Using the strategy of low substrate concentration, a record super high volumetric nitrogen removal rate of 45.24 kg-N m -3 day -1 was noted after the operation of 230 days. To our knowledge, such a high value has not been reported previously. The evidence from transmission electron microscopy (TEM) showed that the morphology and ultrastructure of the Anammox cells in both the reactor enrichments was different.

  4. Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

    OpenAIRE

    Li, Xin; Zhang, Haikun; Wang, Peiji; Li, Guiqiu; Zhao, Shengzhi; Wang, Jing; Chen, Lijuan

    2014-01-01

    The graphene oxide (GO) thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO). The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA) is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have de...

  5. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  6. Optical and electrical characteristics of zirconium oxide thin films deposited on silicon substrates by spray pyrolysis

    International Nuclear Information System (INIS)

    Aguilar-Frutis, M.; Araiza, J.J.; Falcony, C.; Garcia, M.

    2002-01-01

    The optical and electrical characteristics of zirconium oxide thin films deposited by spray pyrolysis on silicon substrates are reported. The films were deposited from a spraying solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. The substrate temperature during deposition was in the range of 400 to 600 grad C. Deposition rates up to 16 A/sec were obtained depending on the spraying solution concentration and on the substrate temperature. A refraction index of the order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements. The addition of water mist during the spraying deposition process was also studied in the characteristics of the films. (Authors)

  7. Spectroscopic properties of Er/Nd co-doped yttrium lanthanum oxide transparent ceramics pumped at 980 nm

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Yingjie; Yang, Qiuhong, E-mail: yangqiuhong@shu.edu.cn; Gui, Yan; Yuan, Ye; Lu, Qing

    2016-05-15

    (Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} (x = 0, 0.001, 0.002, 0.005, 0.01) transparent ceramics were prepared by conventional ceramic processing. The Nd{sup 3+} content dependencies of mid-infrared, near infrared and up-conversion emission of Er{sup 3+} pumped at 980 nm were fully presented. Mechanism of energy transfer between Er{sup 3+} and Nd{sup 3+} was also demonstrated. The results showed that co-doping 0.1 at% Nd{sup 3+} into 1 at% Er{sup 3+} doped yttrium lanthanum oxide transparent ceramic enhanced the 2.7 μm emission significantly and meanwhile suppressed the 1.5 μm emission effectively which indicated an improvement in population inversion between Er:{sup 4}I{sub 11/2} and Er:{sup 4}I{sub 13/2}. Moreover, green up-conversion emission of Er{sup 3+} ion also showed a great improvement by co-doping 0.1 at% Nd{sup 3+}. Those great results were attributed to energy recycle from Er:{sup 4}I{sub 13/2} to Er:{sup 4}I{sub 11/2}. The energy recycle was mainly built by the two energy transfer between Er{sup 3+} and Nd{sup 3+} (one is from Er to Nd, another is in opposite way). So, Er/Nd co-doped yttrium lanthanum oxide transparent ceramic with Nd in low concentration can be considered as a promising laser material for ∼3 μm and up-conversion laser application. - Highlights: • (Er{sub 0.01}Nd{sub x}Y{sub 0.89-x}La{sub 0.1}){sub 2}O{sub 3} transparent ceramics were prepared. • The emission of 2.7 μm of Er{sup 3+} ion was significantly enhanced as x was 0.001. • The emission of 1.5 μm of Er{sup 3+} ion was suppressed greatly by co-doping Nd{sup 3+} ion. • Mechanism of Er–Nd energy transfer was discussed by the energy sketch.

  8. Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

    International Nuclear Information System (INIS)

    Li, Zhiting; Zhou, Feng; Parobek, David; Shenoy, Ganesh J.; Muldoon, Patrick; Liu, Haitao

    2015-01-01

    We report the catalytic effect of copper substrate on graphene–oxygen reaction at high temperature. Previous studies showed that graphene grown on copper are mostly defect-free with strong oxidation resistance. We found that a freshly prepared copper-supported graphene sample can be completely oxidized in trace amount of oxygen (<3 ppm) at 600 °C within 2 h. Both X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) suggest that upon ambient air exposure, oxygen molecules diffuse into the space between graphene and copper, resulting in the formation of copper oxide which acts as catalytic sites for the graphene-oxygen reaction. This result has important implications for the characterization, processing, and storage of copper-supported graphene samples. - Graphical abstract: The copper substrate enhances the thermel oxidation of single-layer graphene. - Highlights: • A copper-supported graphene can be oxidized in Ar (O 2 <3 ppm, 600 °C, 2 h). • O 2 intercalates between graphene and copper upon exposure to air. • The copper foil should not be considered as an inert substrate

  9. Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays

    Science.gov (United States)

    Li, Mary; Sultana, Mahmooda; Hess, Larry

    2012-01-01

    Graphene is a single atomic layer of graphite. It is optically transparent and has high electron mobility, and thus has great potential to make transparent conductive electrodes. This invention contributes towards the development of graphene transparent conductive electrodes for next-generation microshutter arrays. The original design for the electrodes of the next generation of microshutters uses indium-tin-oxide (ITO) as the electrode material. ITO is widely used in NASA flight missions. The optical transparency of ITO is limited, and the material is brittle. Also, ITO has been getting more expensive in recent years. The objective of the invention is to develop a graphene transparent conductive electrode that will replace ITO. An exfoliation procedure was developed to make graphene out of graphite crystals. In addition, large areas of single-layer graphene were produced using low-pressure chemical vapor deposition (LPCVD) with high optical transparency. A special graphene transport procedure was developed for transferring graphene from copper substrates to arbitrary substrates. The concept is to grow large-size graphene sheets using the LPCVD system through chemical reaction, transfer the graphene film to a substrate, dope graphene to reduce the sheet resistance, and pattern the film to the dimension of the electrodes in the microshutter array. Graphene transparent conductive electrodes are expected to have a transparency of 97.7%. This covers the electromagnetic spectrum from UV to IR. In comparison, ITO electrodes currently used in microshutter arrays have 85% transparency in mid-IR, and suffer from dramatic transparency drop at a wavelength of near-IR or shorter. Thus, graphene also has potential application as transparent conductive electrodes for Schottky photodiodes in the UV region.

  10. An Optically-Transparent Aptamer-Based Detection System for Colon Cancer Applications Using Gold Nanoparticles Electrodeposited on Indium Tin Oxide

    Directory of Open Access Journals (Sweden)

    Mojgan Ahmadzadeh-Raji

    2016-07-01

    Full Text Available In this paper, a label-free aptamer based detection system (apta-DS was investigated for detecting colon cancer cells. For this purpose, we employed an aptamer specific to colon cancer cells like HCT116 expressing carcinoembryonic antigen (CEA on their surfaces. Capture aptamers were covalently immobilized on the surface of gold nanoparticles (GNPs through self-assembly monolayer of 11-mercaptoundecanoic acid (11-MUA activated with EDC (1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide/N-hydroxysuccinimide (NHS. The cyclic voltammetry (CV and chronopotentiometry (CP methods were used for electrodeposition of GNPs on the surface of indium tin oxide (ITO. In this work, the CV method was also used to demonstrate the conjugation of GNPs and aptamers and identify the cancer cell capturing events. Additionally, Field Emission Scanning Electron Microscopy (FE-SEM confirmed the deposition of GNPs on ITO and the immobilization of aptamer on the apta-DS. The electrodeposited GNPs played the role of nanoprobes for cancer cell targeting without losing the optical transparency of the ITO substrate. A conventional optical microscope also verified the detection of captured cancer cells. Based on this study’s results relying on electrochemical and optical microscopic methods, the proposed apta-DS is reliable and high sensitive with a LOD equal to 6 cell/mL for colon cancer detection.

  11. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)], E-mail: susanamaria.fernandez@ciemat.es; Martinez-Steele, A.; Gandia, J.J. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala. Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2009-03-31

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 {sup o}C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 {sup o}C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10{sup -3} {omega} cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 {omega}{sup -1} cm{sup -1} vs 14,900 {omega}{sup -1} cm{sup -1}, respectively.

  12. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    International Nuclear Information System (INIS)

    Fernandez, S.; Martinez-Steele, A.; Gandia, J.J.; Naranjo, F.B.

    2009-01-01

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 o C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 o C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10 -3 Ω cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 Ω -1 cm -1 vs 14,900 Ω -1 cm -1 , respectively

  13. Fabrication of Graphene Oxide Dispersed DLC/PDMS Substrates and Human Mesenchymal Stem Cell Culture(Researches)

    OpenAIRE

    伴, 雅人; Masahito, Ban

    2016-01-01

    Graphene Oxide (GO) dispersed DLC (diamond-like carbon) thin film deposited PDMS substrates were fabricated with plasma treatments and dip coating methods. It was found from cell culture tests using the substrates as scaffolds human mesenchymal stem cells (hMSCs) indicated larger F-actin areas compared with the substrates without GO and/or DLC.

  14. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. A flexible and transparent graphene/ZnO nanorod hybrid structure fabricated by exfoliating a graphite substrate

    Science.gov (United States)

    Nam, Gwang-Hee; Baek, Seong-Ho; Cho, Chang-Hee; Park, Il-Kyu

    2014-09-01

    We demonstrate the fabrication of a graphene/ZnO nanorod (NR) hybrid structure by mechanical exfoliation of ZnO NRs grown on a graphite substrate. We confirmed the existence of graphene sheets on the hybrid structure by analyzing the Raman spectra and current-voltage (I-V) characteristics. The Raman spectra of the exfoliated graphene/ZnO NR hybrid structure show G and 2D band peaks that are shifted to lower wavenumbers, indicating that the exfoliated graphene layer exists under a significant amount of strain. The I-V characteristics of the graphene/ZnO NR hybrid structure show current flow through the graphene layer, while no current flow is observed on the ZnO NR/polydimethylsiloxane (PDMS) composite without graphene, thereby indicating that the few-layer graphene was successfully transferred onto the hybrid structure. A piezoelectric nanogenerator is demonstrated by using the fabricated graphene/ZnO NR hybrid structure. The nanogenerator exhibits stable output voltage up to 3.04 V with alternating current output characteristics.We demonstrate the fabrication of a graphene/ZnO nanorod (NR) hybrid structure by mechanical exfoliation of ZnO NRs grown on a graphite substrate. We confirmed the existence of graphene sheets on the hybrid structure by analyzing the Raman spectra and current-voltage (I-V) characteristics. The Raman spectra of the exfoliated graphene/ZnO NR hybrid structure show G and 2D band peaks that are shifted to lower wavenumbers, indicating that the exfoliated graphene layer exists under a significant amount of strain. The I-V characteristics of the graphene/ZnO NR hybrid structure show current flow through the graphene layer, while no current flow is observed on the ZnO NR/polydimethylsiloxane (PDMS) composite without graphene, thereby indicating that the few-layer graphene was successfully transferred onto the hybrid structure. A piezoelectric nanogenerator is demonstrated by using the fabricated graphene/ZnO NR hybrid structure. The nanogenerator

  17. A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

    Directory of Open Access Journals (Sweden)

    Daniela Lehr

    2015-11-01

    Full Text Available Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides. Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+. Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides. A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl. We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

  18. Substrate inhibition: Oxidation of D-sorbitol and D-mannitol by potassium periodate in alkaline medium

    Science.gov (United States)

    Lakshman Kumar, Y.; Venkata Nadh, R.; Radhakrishnamurti, P. S.

    2014-05-01

    In the oxidation of D-sorbitol and D-mannitol by potassium periodate in alkaline media, substrate inhibition was observed with both substrates, i.e., a decrease in the rate of the reaction was observed with an increase in the concentration of substrate. The substrate inhibition was attributed to the formation of stable complex between the substrate and periodate. The reactions were found to be first order in case of periodate and a positive fractional order with hydroxide ions. Arrhenius parameters were calculated for the oxidation of sorbitol and mannitol by potassium periodate in alkali media.

  19. Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

    International Nuclear Information System (INIS)

    Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

    2016-01-01

    Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

  20. Protective Effect of Selected Medicinal Plants against Hydrogen Peroxide Induced Oxidative Damage on Biological Substrates

    Directory of Open Access Journals (Sweden)

    Namratha Pai Kotebagilu

    2014-01-01

    Full Text Available Oxidative stress is developed due to susceptibility of biological substrates to oxidation by generation of free radicals. In degenerative diseases, oxidative stress level can be reduced by antioxidants which neutralize free radicals. Primary objective of this work was to screen four medicinal plants, namely, Andrographis paniculata, Costus speciosus, Canthium parviflorum, and Abrus precatorius, for their antioxidant property using two biological substrates—RBC and microsomes. The antioxidative ability of three solvent extracts, methanol (100% and 80% and aqueous leaf extracts, was studied at different concentrations by thiobarbituric acid reactive substances method using Fenton’s reagent to induce oxidation in the substrates. The polyphenol and flavonoid content were analyzed to relate with the observed antioxidant effect of the extracts. The phytochemical screening indicated the presence of flavonoids, polyphenols, tannins, and β-carotene in the samples. In microsomes, 80% methanol extract of Canthium and Costus and, in RBC, 80% methanol extract of Costus showed highest inhibition of oxidation and correlated well with the polyphenol and flavonoid content. From the results it can be concluded that antioxidants from medicinal plants are capable of inhibiting oxidation in biological systems, suggesting scope for their use as nutraceuticals.

  1. GDH-Dependent Glutamate Oxidation in the Brain Dictates Peripheral Energy Substrate Distribution

    DEFF Research Database (Denmark)

    Karaca, Melis; Frigerio, Francesca; Migrenne, Stephanie

    2015-01-01

    in a central energy-deprivation state with increased ADP/ATP ratios and phospho-AMPK in the hypothalamus. This induced changes in the autonomous nervous system balance, with increased sympathetic activity promoting hepatic glucose production and mobilization of substrates reshaping peripheral energy stores...... glutamate dehydrogenase (GDH) activity. Here, we investigated the significance of glutamate as energy substrate for the brain. Upon glutamate exposure, astrocytes generated ATP in a GDH-dependent way. The observed lack of glutamate oxidation in brain-specific GDH null CnsGlud1(-/-) mice resulted...

  2. Correction factors for 13C-labelled substrate oxidation at whole-body and muscle level

    DEFF Research Database (Denmark)

    Van Hall, Gerrit

    1999-01-01

    acid cycle. Changes in metabolic rate induced, for example, by feeding, hormonal changes and physical activity, as well as infusion time, have been shown to affect both correction factors. The present paper explains the theoretical and physiological basis of these correction factors and makes...... for the proportion of labelled CO2 that is produced via oxidation but not excreted. Furthermore, depending on the substrate and position of the C label(s), there may also be a need to correct for labelled C from the metabolized substrate that does not appear as CO2, but rather becomes temporarily fixed in other...

  3. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  4. Scalable Fabrication of High-Performance Transparent Conductors Using Graphene Oxide-Stabilized Single-Walled Carbon Nanotube Inks

    Directory of Open Access Journals (Sweden)

    Linxiang He

    2018-04-01

    Full Text Available Recent development in liquid-phase processing of single-walled carbon nanotubes (SWNTs has revealed rod-coating as a promising approach for large-scale production of SWNT-based transparent conductors. Of great importance in the ink formulation is the stabilizer having excellent dispersion stability, environmental friendly and tunable rheology in the liquid state, and also can be readily removed to enhance electrical conductivity and mechanical stability. Herein we demonstrate the promise of graphene oxide (GO as a synergistic stabilizer for SWNTs in water. SWNTs dispersed in GO is formulated into inks with homogeneous nanotube distribution, good wetting and rheological properties, and compatible with industrial rod coating practice. Microwave treatment of rod-coated films can reduce GOs and enhance electro-optical performance. The resultant films offer a sheet resistance of ~80 Ω/sq at 86% transparency, along with good mechanical flexibility. Doping the films with nitric acid can further decrease the sheet resistance to ~25 Ω/sq. Comparing with the films fabricated from typical surfactant-based SWNT inks, our films offer superior adhesion as assessed by the Scotch tape test. This study provides new insight into the selection of suitable stabilizers for functional SWNT inks with strong potential for printed electronics.

  5. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19transparent conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. The effects of diurnal Ramadan fasting on energy expenditure and substrate oxidation in healthy men.

    Science.gov (United States)

    Alsubheen, Sana'a A; Ismail, Mohammad; Baker, Alicia; Blair, Jason; Adebayo, Adeboye; Kelly, Liam; Chandurkar, Vikram; Cheema, Sukhinder; Joanisse, Denis R; Basset, Fabien A

    2017-12-01

    The study aimed to examine the effects of diurnal Ramadan fasting (RF) on substrate oxidation, energy production, blood lipids and glucose as well as body composition. Nine healthy Muslim men (fasting (FAST) group) and eight healthy non-practicing men (control (CNT) group) were assessed pre- and post-RF. FAST were additionally assessed at days 10, 20 and 30 of RF in the morning and evening. Body composition was determined by hydrodensitometry, substrate oxidation and energy production by indirect calorimetry, blood metabolic profile by biochemical analyses and energy balance by activity tracker recordings and food log analyses. A significant group×time interaction revealed that chronic RF reduced body mass and adiposity in FAST, without changing lean mass, whereas CNT subjects remained unchanged. In parallel to these findings, a significant main diurnal effect (morning v. evening) of RF on substrate oxidation (a shift towards lipid oxidation) and blood metabolic profile (a decrease in glucose and an increase in total cholesterol and TAG levels, respectively) was observed, which did not vary over the course of the Ramadan. In conclusion, although RF induces diurnal metabolic adjustments (morning v. evening), no carryover effect was observed throughout RF despite the extended daily fasting period (18·0 (sd 0·3) h) and changes in body composition.

  7. EXAMINATION OF THE OXIDATION PROTECTION OF ZINC COATINGS FORMED ON COPPER ALLOYS AND STEEL SUBSTRATES

    International Nuclear Information System (INIS)

    Papazoglou, M.; Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.

    2010-01-01

    The exposure of metallic components at aggressive high temperature environments, usually limit their usage at similar application because they suffer from severe oxidation attack. Copper alloys are used in a wide range of high-quality indoor and outdoor applications, statue parts, art hardware, high strength and high thermal conductivity applications. On the other hand, steel is commonly used as mechanical part of industrial set outs or in the construction sector due to its high mechanical properties. The aim of the present work is the examination of the oxidation resistance of pack cementation zinc coatings deposited on copper, leaded brass and steel substrates at elevated temperature conditions. Furthermore, an effort made to make a long-term evaluation of the coated samples durability. The oxidation results showed that bare substrates appear to have undergone severe damage comparing with the coated ones. Furthermore, the mass gain of the uncoated samples was higher than this of the zinc covered ones. Particularly zinc coated brass was found to be more resistant to oxidation conditions in which it was exposed as it has the lower mass gain as compared to the bare substrates and zinc coated copper. Zinc coated steel was also proved to be more resistive than the uncoated steel.

  8. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-01-01

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  9. Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

    Directory of Open Access Journals (Sweden)

    Salvatore Sanzaro

    2016-06-01

    Full Text Available Transparent conductive oxide (TCO layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs, were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188 °C and at fixed working pressure (1.4 Pa using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O2 was selectively injected close to the sample in a small percentage (Ar:O2 = 69 sccm:2 sccm. We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS and spectroscopic ellipsometry (SE analyses has shown that the incorporated host-atoms are Al3+ species in Zn2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was ~2%, as measured by energy dispersive X-ray (EDX spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of ~7 nm/min, exhibits high transmittance in the visible range (~85% and low resistivity values (~13 mΩ × cm. The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

  10. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  11. Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

    International Nuclear Information System (INIS)

    Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A

    2017-01-01

    The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)

  12. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  13. Transparent platinum counter electrode for efficient semi-transparent dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Iefanova, Anastasiia; Nepal, Jeevan; Poudel, Prashant; Davoux, Daren; Gautam, Umesh [Electrical Engineering and Computer Science Department, South Dakota State University, Brookings, SD 57006 (United States); Mallam, Venkataiah [Chemistry and Biochemistry Department, South Dakota State University, Brookings, SD 57006 (United States); Qiao, Qiquan [Electrical Engineering and Computer Science Department, South Dakota State University, Brookings, SD 57006 (United States); Logue, Brian [Chemistry and Biochemistry Department, South Dakota State University, Brookings, SD 57006 (United States); Baroughi, Mahdi Farrokh, E-mail: m.farrokhbaroughi@sdstate.edu [Electrical Engineering and Computer Science Department, South Dakota State University, Brookings, SD 57006 (United States)

    2014-07-01

    A method for fabrication of highly transparent platinum counter electrodes (CEs) has been developed based on spray coating of Pt nanoparticles (NPs) on hot substrates. This method leads to 86% reduction in Pt consumption reducing the Pt cost per peak watt of counter electrode from $0.79/Wp down to $0.11/Wp compared to the conventional Pt counter electrodes made by sputter deposition. The simplicity and low cost of this method provide a basis for an up-scalable fabrication process. The Pt NP layer is over 88% transparent, leading to overall transparency of 80% when incorporated with indium tin oxide/glass substrates for functional counter electrodes. This counter electrode exhibits a large surface area and high catalytic activity, comparable to that of the conventional opaque CEs. Semi-transparent dye-sensitized solar cells fabricated based on this counter electrode showed 6.17% power conversion efficiency. - Highlights: • Counter electrode (CE) prepared by spraying nanoparticle (NP) Pt on hot substrate. • Low cost and scalable fabrication process of CE. • The spray deposited CE uses 10 times less Pt compared to the sputtering method. • The CE is 80% transparent and exhibits a large surface and high catalytic activity. • A semitransparent dye-sensitized solar cell with Pt NP CE was 6.17% efficient.

  14. Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

    Science.gov (United States)

    Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

    2018-05-01

    The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

  15. Fabrication of oxide-free graphene suspension and transparent thin films using amide solvent and thermal treatment

    International Nuclear Information System (INIS)

    Oh, Se Young; Kim, Sung Hwan; Chi, Yong Seung; Kang, Tae Jin

    2012-01-01

    Graphical abstract: New methodology for suspended graphene sheets of high-quality (oxide-free), high-yield (high concentration) using amide solvent exfoliation and thermal treatment at 800 °C. We confirmed that the van der Waals force between the graphene layers decreases as increasing thermal treatment temperatures as shown XRD data (b). Highlights: ► Propose of new methodology to prepare oxide-free graphene sheets suspension. ► The graphene suspension concentration is enhanced by thermal treatment. ► Decrease of van der Waals force between the graphene layers by high temperature and pressure. ► This method has the potential as technology for mass production. ► It could be applied in transparent and flexible electronic devices. - Abstract: High quality graphene sheets were produced from graphite by liquid phase exfoliation using N-methyl-2-pyrrolidone (NMP) and a subsequent thermal treatment to enhance the exfoliation. The exfoliation was enhanced by treatment with organic solvent and high thermal expansion producing high yields of the high-quality and defect-free graphene sheets. The graphene was successfully deposited on a flexible and transparent polymer film using the vacuum filtration method. SEM images of thin films of graphene treated at 800 °C showed uniform structure with no defects commonly found in films made of graphene produced by other techniques. Thin films of graphene prepared at higher temperatures showed superior transmittance and conductivity. The sheet-resistance of the graphene film treated at 800 °C was 2.8 × 10 3 kΩ/□ with 80% transmittance.

  16. Flexible transparent electrode

    Science.gov (United States)

    Demiryont, Hulya; Shannon, Kenneth C., III; Moorehead, David; Bratcher, Matthew

    2011-06-01

    This paper presents the properties of the EclipseTECTM transparent conductor. EclipseTECTM is a room temperature deposited nanostructured thin film coating system comprised of metal-oxide semiconductor elements. The system possesses metal-like conductivity and glass-like transparency in the visible region. These highly conductive TEC films exhibit high shielding efficiency (35dB at 1 to 100GHz). EclipseTECTM can be deposited on rigid or flexible substrates. For example, EclipseTECTM deposited on polyethylene terephthalate (PET) is extremely flexible that can be rolled around a 9mm diameter cylinder with little or no reduction in electrical conductivity and that can assume pre-extension states after an applied stress is relieved. The TEC is colorless and has been tailored to have high visible transmittance which matches the eye sensitivity curve and allows the viewing of true background colors through the coating. EclipseTECTM is flexible, durable and can be tailored at the interface for applications such as electron- or hole-injecting OLED electrodes as well as electrodes in flexible displays. Tunable work function and optical design flexibility also make EclipseTECTM well-suited as a candidate for grid electrode replacement in next-generation photovoltaic cells.

  17. Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

    Directory of Open Access Journals (Sweden)

    Xin Li

    2014-01-01

    Full Text Available The graphene oxide (GO thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO. The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have demonstrated that graphene oxide is an available saturable absorber for 1064 nm passive Q-switching laser.

  18. Nanocrystalline transparent SnO{sub 2}-ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K.; Sakthivel, B.; Philominathan, P. [P. G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur, Tamilnadu 613503 (India)

    2010-03-15

    Nanocrystalline and transparent conducting SnO{sub 2}- ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360{+-}5 C) compared with conventional spray method. The structural studies reveal that the SnO{sub 2}-ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48 x 10{sup 15}lines/m{sup 2}), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26-34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 k{omega}/{open_square} to 32.4 k{omega}/{open_square} as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63 x 10{sup -2} ({omega}/{open_square}){sup -1}), low temperature coefficient of resistance (-1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO{sub 2} - ZnO films for solar cells, sensors and opto-electronic applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Raman spectroscopy analysis of air grown oxide scale developed on pure zirconium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kurpaska, L., E-mail: lukasz.kurpaska@ncbj.gov.pl [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France); National Center for Nuclear Research, St. A. Soltana 7/23, 05-400 Otwock-Swierk (Poland); Favergeon, J. [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France); Lahoche, L. [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France); Laboratoire des Technologies Innovantes, Université de Picardie Jules-Verne, EA 3899, Avenue des Facultés – Le Bailly, 80025 Amiens Cedex (France); El-Marssi, M. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules-Verne, 33 rue St. Leu, 80039 Amiens Cedex (France); Grosseau Poussard, J.-L. [LaSIE UMR-CNRS 7356, Pole Sciences et Technologie, Universite de La Rochelle, av. M Crepeau, 17042 La Rochelle, Cedex (France); Moulin, G.; Roelandt, J.-M. [Laboratoire Roberval, UMR 7337, Université de Technologie de Compiègne, Centre de Recherche de Royallieu, CS 60319, 60203 Compiègne Cedex (France)

    2015-11-15

    Using Raman spectroscopy technique, external and internal parts of zirconia oxide films developed at 500 °C and 600 °C on pure zirconium substrate under air at normal atmospheric pressure have been examined. Comparison of Raman peak positions of tetragonal and monoclinic zirconia phases, recorded during the oxide growth at elevated temperature, and after cooling at room temperature have been presented. Subsequently, Raman peak positions (or shifts) were interpreted in relation with the stress evolution in the growing zirconia scale, especially closed to the metal/oxide interface, where the influence of compressive stress in the oxide is the biggest. Reported results, for the first time show the presence of a continuous layer of tetragonal zirconia phase developed in the proximity of pure zirconium substrate. Based on the Raman peak positions we prove that this tetragonal layer is stabilized by the high compressive stress and sub-stoichiometry level. Presence of the tetragonal phase located in the outer part of the scale have been confirmed, yet its Raman characteristics suggest a stress-free tetragonal phase, therefore different type of stabilization mechanism. Presented study suggest that its stabilization could be related to the lattice defects introduced by highstoichiometry of zirconia or presence of heterovalent cations. - Highlights: • The oxide layer consists of a mixture of tetragonal and monoclinic phases, clearly distinguishable by Raman spectroscopy. • The layer located close to the metal/oxide interphase consists mainly of the tetragonal phase. • Small amount of tetragonal layer located in the external oxide scale have been observed. • Stabilization mechanism of the tetragonal phase located in the external part of the oxide have been proposed.

  20. Photosynthetic water oxidation: binding and activation of substrate waters for O-O bond formation.

    Science.gov (United States)

    Vinyard, David J; Khan, Sahr; Brudvig, Gary W

    2015-01-01

    Photosynthetic water oxidation occurs at the oxygen-evolving complex (OEC) of Photosystem II (PSII). The OEC, which contains a Mn4CaO5 inorganic cluster ligated by oxides, waters and amino-acid residues, cycles through five redox intermediates known as S(i) states (i = 0-4). The electronic and structural properties of the transient S4 intermediate that forms the O-O bond are not well understood. In order to gain insight into how water is activated for O-O bond formation in the S4 intermediate, we have performed a detailed analysis of S-state dependent substrate water binding kinetics taking into consideration data from Mn coordination complexes. This analysis supports a model in which the substrate waters are both bound as terminal ligands and react via a water-nucleophile attack mechanism.

  1. Dye-sensitized solar cells based on different nano-oxides on plastic PET substrate

    Science.gov (United States)

    Mikula, Milan; Gemeiner, Pavol; Beková, Zuzana; Dvonka, Vladimír; Búc, Dalibor

    2015-01-01

    Polyethylene-terephthalate (PET) foils and glass slides coated with thin conductive layers were used as substrates for TiO2 or ZnO based photoactive electrodes of dye-sensitized solar cells (DSSC) with organo-metallic Ru-dye, standard iodine electrolyte and Pt coated FTO/glass counterelectrode (CE). Different compositions of nanoparticle oxides in forms of alcohol pastes as well as the CE paste were applied onto the substrates by screen printing or by doctor blade techniques. Photocurrents and I-V loading characteristics were measured depending on the solar cell structure and preparation, including the oxide composition, electrode conductivity and the dye type. The influence of thin TiO2 blocking layer prepared by sol-gel technique is also discussed.

  2. Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

    International Nuclear Information System (INIS)

    Kim, Hyun Gi; Kim, Sung Soo

    2011-01-01

    Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

  3. Improving long term oxidation protection for {gamma}-TiAl substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bobzin, K.; Schlaefer, T.; Bruehl, M.; Linke, T.F. [Thermisches Spritzen, Institut fuer Oberflaechentechnik (IOT), RWTH Aachen University (Germany); Warda, T.

    2011-11-15

    In previous work, a thermal spray multilayer system consisting of Zirconia (ZrO{sub 2}) and MCrAlY top coat showed promising results regarding the oxidation behavior of the Gamma Titanium Aluminides substrates tested, which encouraged further research activities. Diffusion of substrate material was successfully inhibited by a ceramic Zirconia coating. A building up of a dense and stable oxide layer could be achieved by additional application of an MCrAlY top coat, leading to improved oxidation resistance and thus showing feasibility. In this work the main focus for development was put on enhancing adhesion and lowering residual stresses of the coatings in order to allow long term and cyclic testing without delamination taking place. Being a very brittle material, Gamma Titanium Aluminides require special surface treatment to enable roughening which is crucial for a strong mechanical bond between substrate and coating. Alternatives to conventional grit blasting as a standard preparation method were investigated. These were micro-abrasive blasting and blasting at elevated temperature ({approx}300-550 C) to allow a more ductile behavior. The paper will highlight the implications by means of these measures and will also show the present development status of the multilayer system. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

    International Nuclear Information System (INIS)

    Asalkhanov, Yu.I.; Saneev, Eh.L.

    2002-01-01

    Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru

  5. Effects of p-Synephrine and Caffeine Ingestion on Substrate Oxidation during Exercise.

    Science.gov (United States)

    Gutiérrez-Hellín, Jorge; Del Coso, Juan

    2018-04-27

    Caffeine and p-synephrine are substances usually included in commercially-available products for weight loss because of their purported thermogenic effects. However, scientific information is lacking about the effects of combining these substances on substrate oxidation during exercise. The purpose of this investigation was to determine the isolated and combined effects of p-synephrine and caffeine on fat oxidation rate during exercise. In a double-blind randomized experiment, 13 healthy subjects participated in 4 experimental trials after the ingestion of a capsule containing either a placebo, 3 mg·kg of caffeine, 3 mg·kg of p-synephrine, or the combination of these doses of caffeine and p-synephrine. Energy expenditure and substrate oxidation rates were measured by indirect calorimetry during a cycle ergometer ramp test from 30 to 90% of VO2max. In comparison to the placebo, the ingestion of caffeine, p-synephrine, or p-synephrine+caffeine did not alter total energy expenditure or heart rate during the whole exercise test. However, the ingestion of caffeine (0.44 ± 0.15 g·min, P = 0.03), p-synephrine (0.43 ± 0.19 g·min, P < 0.01), and p-synephrine+caffeine (0.45 ± 0.15 g·min, P = 0.02) increased the maximal rate of fat oxidation during exercise when compared to the placebo (0.30 ± 0.12 g·min). The exercise intensity that elicited maximal fat oxidation was similar in all trials (~46.2 ± 10.2% of VO2max). Caffeine, p-synephrine and p-synephrine+caffeine increased the maximal rate of fat oxidation during exercise compared to a placebo, without modifying energy expenditure or heart rate. However, the co-ingestion of p-synephrine and caffeine did not present an additive effect to further increase fat oxidation during exercise.

  6. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  7. Transparent Conducting Films of Antimony-Doped Tin Oxide with Uniform Mesostructure Assembled from Preformed Nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Müller, V.; Rasp, M.; Rathouský, Jiří; Schütz, B.; Niederberger, M.; Fattakhova-Rohlfing, D.

    2010-01-01

    Roč. 6, č. 5 (2010), s. 633-637 ISSN 1613-6810 R&D Projects: GA ČR GA104/08/0435 Institutional research plan: CEZ:AV0Z40400503 Keywords : antimony -doped tin oxide * msoporous materials * nanoparticles Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 7.333, year: 2010

  8. Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J. [Birck Nanotechnology Center and School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Callahan, Michael; Bailey, John [Greentech Solutions, Inc., Hanson, Massachusetts 02341 (United States); Look, David [Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States); Efstathiadis, Harry [College of Nanoscale Science and Engineering (CNSE), University of Albany, Albany, New York 12203 (United States)

    2015-06-01

    Commercial production of transparent conducting oxide (TCO) polycrystalline films requires high electrical conductivity with minimal degradation in optical transparency. Aqueous solution deposited TCO films would reduce production costs of TCO films but suffer from low electrical mobility, which severely degrades both electrical conductivity and optical transparency in the visible spectrum. Here, we demonstrated that grain boundary modification by ultra-violet laser crystallization (UVLC) of solution deposited aluminium-doped zinc oxide (AZO) nanocrystals results in high Hall mobility, with a corresponding dramatic improvement in AZO electrical conductance. The AZO films after laser irradiation exhibit electrical mobility up to 18.1 cm{sup 2} V{sup −1} s{sup −1} with corresponding electrical resistivity and sheet resistances as low as 1 × 10{sup −3} Ω cm and 75 Ω/sq, respectively. The high mobility also enabled a high transmittance (T) of 88%-96% at 550 nm for the UVLC films. In addition, HAZE measurement shows AZO film scattering transmittance as low as 1.8%, which is superior over most other solution deposited transparent electrode alternatives such as silver nanowires. Thus, AZO films produced by the UVLC technique have a combined figure of merit for electrical conductivity, optical transparency, and optical HAZE higher than other solution based deposition techniques and comparable to vacuumed based deposition methods.

  9. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

    International Nuclear Information System (INIS)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; Andrés, A. de; Prieto, C.

    2015-01-01

    Highlights: • ITO deposition on glass and PET at room temperature by using H. • High transparency and low resistance is obtained by tuning the H. • The figure of merit for ITO films on PET becomes maximal for thickness near 100 nm. - Abstract: The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H 2 in the gas mixture of H 2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H 2 /(Ar + H 2 ) ratio in the range of 0.3–0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Φ TC = T 10 /R S , than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices

  10. Roll-to-roll fabrication of a low-reflectance transparent conducting oxide film with subwavelength structures

    Science.gov (United States)

    Chou, Ta-Hsin; Cheng, Kuei-Yuan; Hsieh, Chih-Wei; Takaya, Yasuhiro

    2012-04-01

    The transparent conducting oxide (TCO) film is a significant component in flat panel display, e-paper and touch panel. The tin-doped indium oxide (ITO) material is one of the most popular TCOs. However, ITO has high refractive index, so the phenomenon of high-reflectance limits the wide use of ITO. In this study, the structure and mass production process of new low-reflectance TCO film is verified. Laser interference lithography and the roll-to-roll UV embossing process are used to fabricate subwavelength structures on PET film; then ITO was deposited on structures by roll-to-roll sputtering. When the dimension of structures reaches 300 nm pitch, the optical reflectance and electrical performance of film are reduced to 8.1% at wavelength 550 nm and its transmittance rate is 84.3% at the same wavelength, and the sheet resistance of this film is 50.44 Ω/□. This result indicates that the new TCO proposed in this study is suitable for touch panel and other display applications.

  11. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  12. Biochemical competition makes fatty-acid β-oxidation vulnerable to substrate overload.

    Directory of Open Access Journals (Sweden)

    Karen van Eunen

    Full Text Available Fatty-acid metabolism plays a key role in acquired and inborn metabolic diseases. To obtain insight into the network dynamics of fatty-acid β-oxidation, we constructed a detailed computational model of the pathway and subjected it to a fat overload condition. The model contains reversible and saturable enzyme-kinetic equations and experimentally determined parameters for rat-liver enzymes. It was validated by adding palmitoyl CoA or palmitoyl carnitine to isolated rat-liver mitochondria: without refitting of measured parameters, the model correctly predicted the β-oxidation flux as well as the time profiles of most acyl-carnitine concentrations. Subsequently, we simulated the condition of obesity by increasing the palmitoyl-CoA concentration. At a high concentration of palmitoyl CoA the β-oxidation became overloaded: the flux dropped and metabolites accumulated. This behavior originated from the competition between acyl CoAs of different chain lengths for a set of acyl-CoA dehydrogenases with overlapping substrate specificity. This effectively induced competitive feedforward inhibition and thereby led to accumulation of CoA-ester intermediates and depletion of free CoA (CoASH. The mitochondrial [NAD⁺]/[NADH] ratio modulated the sensitivity to substrate overload, revealing a tight interplay between regulation of β-oxidation and mitochondrial respiration.

  13. The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

    Science.gov (United States)

    Raoufi, Davood; Taherniya, Atefeh

    2015-06-01

    In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

  14. High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method

    Directory of Open Access Journals (Sweden)

    Hua Yu

    2017-03-01

    Full Text Available Flexible MoO3/silver nanowire (AgNW/MoO3/TiO2/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications. Silver nanoparticle-based electrodes were also prepared for comparison. Using a simple spin-coating and lamination-assisted planarization method, a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140 °C. The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82% at 550 nm and lower sheet resistance about 12–15 Ω sq−1, in comparison with the values of 68% and 22–25 Ω sq−1 separately for AgNP based electrodes. Scanning electron microscopy (SEM and Atomic force microscopy (AFM reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness (<15 nm. The AgNW/MoO3 composite network could enhance the charge transport and collection efficiency by broadening the lateral conduction range due to the built of an efficient charge transport network with long-sized nanowire. In consideration of the manufacturing cost, the lamination-assisted solution-processed method is cost-effective and scalable, which is desire for large-area fabrication. While in view of the materials cost and comparable performance, this AgNW-based transparent and conductive electrodes is potential as an alternative to ITO for various optoelectronic applications.

  15. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  16. Degradation Studies of Polyolefins Incorporating Transparent Nanoparticulate Zinc Oxide UV Stabilizers

    International Nuclear Information System (INIS)

    Ammala, A.; Hill, A.J.; Meakin, P.; Pas, S.J.; Turney, T.W.

    2002-01-01

    Coated and dispersed nanoparticulate zinc oxide is shown to improve ultra violet (UV) stability of polypropylene and high-density polyethylene without changing its characteristic absorption spectrum in the visible region (400-800-nm). The performance of these nanoparticulate UV stabilizers is compared to conventional hindered amine light stabilizers (HALS). QUV accelerated weathering is used to simulate long-term exposure. Positron annihilation lifetime spectroscopy (PALS) is used to provide an indication of physical and chemical changes due to accelerated weathering and is shown to have potential for detecting changes well before other techniques. Visual observation, optical microscopy, carbonyl index, yellowness index and PALS indicate that nanoparticulate zinc oxide gives superior resistance to UV degradation compared to organic HALS at appropriate loading levels

  17. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  18. Ag Nanorods-Oxide Hybrid Array Substrates: Synthesis, Characterization, and Applications in Surface-Enhanced Raman Scattering

    Directory of Open Access Journals (Sweden)

    Lingwei Ma

    2017-08-01

    Full Text Available Over the last few decades, benefitting from the sufficient sensitivity, high specificity, nondestructive, and rapid detection capability of the surface-enhanced Raman scattering (SERS technique, numerous nanostructures have been elaborately designed and successfully synthesized as high-performance SERS substrates, which have been extensively exploited for the identification of chemical and biological analytes. Among these, Ag nanorods coated with thin metal oxide layers (AgNRs-oxide hybrid array substrates featuring many outstanding advantages have been proposed as fascinating SERS substrates, and are of particular research interest. The present review provides a systematic overview towards the representative achievements of AgNRs-oxide hybrid array substrates for SERS applications from diverse perspectives, so as to promote the realization of real-world SERS sensors. First, various fabrication approaches of AgNRs-oxide nanostructures are introduced, which are followed by a discussion on the novel merits of AgNRs-oxide arrays, such as superior SERS sensitivity and reproducibility, high thermal stability, long-term activity in air, corrosion resistivity, and intense chemisorption of target molecules. Next, we present recent advances of AgNRs-oxide substrates in terms of practical applications. Intriguingly, the recyclability, qualitative and quantitative analyses, as well as vapor-phase molecule sensing have been achieved on these nanocomposites. We further discuss the major challenges and prospects of AgNRs-oxide substrates for future SERS developments, aiming to expand the versatility of SERS technique.

  19. Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

    Science.gov (United States)

    Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

    2018-05-01

    Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

  20. Improve the surface of silver nanowire transparent electrode using a double-layer structure for the quantum-dot light-emitting diodes

    Science.gov (United States)

    Cho, Seok Hyeon; Been Heo, Su; Kang, Seong Jun

    2018-03-01

    We developed a double-layer structured transparent electrode for use in flexible quantum-dot light-emitting diodes (QLEDs). Silver nanowires (AgNWs) and highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) were coated on a transparent substrate to obtain a highly conductive and flexible transparent electrode. The highly conductive PEDOT:PSS improved the surface roughness of the AgNWs transparent electrode film as well as the surface coverage area of the film. The double-layer structured transparent electrode showed superior mechanical properties than conventional indium-tin oxide (ITO) and AgNWs transparent electrodes. QLEDs with the double-layer structured transparent electrode also showed good reliability under cyclic bending conditions. These results indicate that the double-layer structured AgNWs/PEDOT:PSS transparent electrode described here is a feasible alternative to ITO transparent electrodes for flexible QLEDs.

  1. Carbohydrate intake and glycemic index affect substrate oxidation during a controlled weight cycle in healthy men.

    Science.gov (United States)

    Kahlhöfer, J; Lagerpusch, M; Enderle, J; Eggeling, B; Braun, W; Pape, D; Müller, M J; Bosy-Westphal, A

    2014-09-01

    Because both, glycemic index (GI) and carbohydrate content of the diet increase insulin levels and could thus impair fat oxidation, we hypothesized that refeeding a low GI, moderate-carbohydrate diet facilitates weight maintenance. Healthy men (n=32, age 26.0±3.9 years; BMI 23.4±2.0 kg/m(2)) followed 1 week of controlled overfeeding, 3 weeks of caloric restriction and 2 weeks of hypercaloric refeeding (+50, -50 and +50% energy requirement) with low vs high GI (41 vs 74) and moderate vs high CHO intake (50% vs 65% energy). We measured adaptation of fasting macronutrient oxidation and the capacity to supress fat oxidation during an oral glucose tolerance test. Changes in fat mass were measured by quantitative magnetic resonance. During overfeeding, participants gained 1.9±1.2 kg body weight, followed by a weight loss of -6.3±0.6 kg and weight regain of 2.8±1.0 kg. Subjects with 65% CHO gained more body weight compared with 50% CHO diet (Pfat oxidation when compared with a low-GI diet (Pfat oxidation was associated with regain in fat mass (r=0.43, Pcarbohydrate content affect substrate oxidation and thus the regain in body weight in healthy men. These results argue in favor of a lower glycemic load diet for weight maintenance after weight loss.

  2. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  3. Thin copolymer-cased light-emitting display made with fluorine-foped tin oxide substrates

    Directory of Open Access Journals (Sweden)

    Lessmann Rudolf

    2004-01-01

    Full Text Available Seven-segment displays are used to show numerical quantities in electronic equipment, being present in most of the low-end electronics. In this work we describe a novel organic light emitting display made with poly(1,10 decanedioxy 2 methoxy - 1,2 phenylene - 1,2 ethenylene - 3,6 dimethoxy - 1,4 phenylene - 1,2 ethenylene 3 methoxy - 1,4 - phenylene (OPPVDBC, tris(8-hydroxyquinolinealuminum salt (Alq3 and a hole injection layer (PEDOT:PSS: poly(3,4 - ethylenedioxythiophene : poly(styrenesulfonate. The general device structure is FTO/PEDOT:PSS/OPPVDBC/Ca/Al or FTO/PEDOT:PSS/OPPVDBC/Alq3/Ca/Al. The FTO (fluorine-doped tin oxide thin films are transparent (transmittance > 80 % in the visible region of the spectrum, conductive (< 15 omega/º for 200 nm thick films, and present high chemical stability.

  4. Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

    Science.gov (United States)

    Bara, Marek; Kubica, Marek

    2014-02-01

    The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

  5. Hydrophilicity Reinforced Adhesion of Anodic Alumina Oxide Template Films to Conducting Substrates for Facile Fabrication of Highly Ordered Nanorod Arrays.

    Science.gov (United States)

    Wang, Chuanju; Wang, Guiqiang; Yang, Rui; Sun, Xiangyu; Ma, Hui; Sun, Shuqing

    2017-01-17

    Arrays of ordered nanorods are of special interest in many fields. However, it remains challenging to obtain such arrays on conducting substrates in a facile manner. In this article, we report the fabrication of highly ordered and vertically standing nanorod arrays of both metals and semiconductors on Au films and indium tin oxide glass substrates without an additional layering. In this approach, following the simple hydrophilic treatment of an anodic aluminum oxide (AAO) membrane and conducting substrates, the AAO membrane was transferred onto the modified substrates with excellent adhesion. Subsequently, nanorod arrays of various materials were electrodeposited on the conducting substrates directly. This method avoids any expensive and tedious lithographic and ion milling process, which provides a simple yet robust route to the fabrication of arrays of 1D materials with high aspect ratio on conducting substrates, which shall pave the way for many practical applications in a range of fields.

  6. Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

    Science.gov (United States)

    Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

    2018-01-01

    The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

  7. Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

    International Nuclear Information System (INIS)

    Pimentel, A.; Fortunato, E.; Goncalves, A.; Marques, A.; Aguas, H.; Pereira, L.; Ferreira, I.; Martins, R.

    2005-01-01

    In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5x10 8 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface

  8. Ultralight, Flexible, and Semi-Transparent Metal Oxide Papers for Photoelectrochemical Water Splitting

    DEFF Research Database (Denmark)

    Zhang, Minwei; Hou, Chengyi; Halder, Arnab

    2017-01-01

    nanostructure and macroscopic morphology of MOs that aims to enhance their performances, but the design and controlled synthesis of ultrafine nanostructured MOs in a cost-effective and facile way remains a challenge. In this work, we have exploited the advantages of intrinsic structures of graphene oxide (GO......) papers, serving as a sacrificial template, to design and synthesize two-dimensional (2D) layered and free-standing MO papers with ultrafine nanostructures. Physicochemical characterizations showed that these MO materials are nanostructured, porous, flexible, and ultralight. The as-synthesized materials...

  9. Efficient CH3NH3PbI3 perovskite/fullerene planar heterojunction hybrid solar cells with oxidized Ni/Au/Cu transparent electrode

    Science.gov (United States)

    Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

    2018-02-01

    We demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a thermally oxidized nickel/gold/copper (Ni/Au/Cu) trilayer transparent electrode. Oxidized Ni/Au/Cu is a high transparent layer and has less resistance than the oxidized Ni/Au layer. Like the oxidized Ni/Au layer, oxidized Ni and Cu in oxidized Ni/Au/Cu could perform as a hole transport layer of the perovskite-based SCs. It leads to improved perovskite SC performance on an open circuit voltage of 1.01 V, a short circuit current density of 14.36 mA/cm2, a fill factor of 76.7%, and a power conversion efficiency (η%) of 11.1%. The η% of perovskite SCs with oxidized Ni (10 nm)/Au (6 nm)/Cu (1 nm) improved by approximately 10% compared with that of perovskite SCs with oxidized Ni/Au.

  10. Polypyrrole Coated Cellulosic Substrate Modified by Copper Oxide as Electrode for Nitrate Electroreduction

    Science.gov (United States)

    Hamam, A.; Oukil, D.; Dib, A.; Hammache, H.; Makhloufi, L.; Saidani, B.

    2015-08-01

    The aim of this work is to synthesize polypyrrole (PPy) films on nonconducting cellulosic substrate and modified by copper oxide particles for use in the nitrate electroreduction process. Firstly, the chemical polymerization of polypyrrole onto cellulosic substrate is conducted by using FeCl3 as an oxidant and pyrrole as monomer. The thickness and topography of the different PPy films obtained were estimated using a profilometer apparatus. The electrochemical reactivity of the obtained electrodes was tested by voltamperometry technique and electrochemical impedance spectroscopy. Secondly, the modification of the PPy film surface by incorporation of copper oxide particles is conducted by applying a galvanostatic procedure from a CuCl2 solution. The SEM, EDX and XRD analysis showed the presence of CuO particles in the polymer films with dimensions less than 50 nm. From cyclic voltamperometry experiments, the composite activity for the nitrate electroreduction reaction was evaluated and the peak of nitrate reduction is found to vary linearly with initial nitrate concentration.

  11. Influence of organic substrates on the kinetics of bacterial As(III) oxidation

    Science.gov (United States)

    Lescure, T.; Joulian, C.; Bauda, P.; Hénault, C.; Battaglia-Brunet, F.

    2012-04-01

    Soil microflora plays a major role on the behavior of metals and metalloids. Arsenic speciation, in particular, is related to the activity of bacteria able to oxidize, reduce or methylate this element, and determines mobility, bioavailability and toxicity of As. Arsenite (AsIII) is more toxic and more mobile than arsenate (AsV). Bacterial As(III)-oxidation tends to reduce the toxicity of arsenic in soils and the risk of transfer toward underlying aquifers, that would affect the quality of water resources. Previous results suggest that organic matter may affect kinetics or efficiency of bacterial As(III)-oxidation in presence of oxygen, thus in conventional physico-chemical conditions of a surface soil. Different hypothesis can be proposed to explain the influence of organic matter on As(III) oxidation. Arsenic is a potential energy source for bacteria. The presence of easily biodegradable organic matter may inhibit the As(III) oxidation process because bacteria would first metabolize these more energetic substrates. A second hypothesis would be that, in presence of organic matter, the Ars system involved in bacterial resistance to arsenic would be more active and would compete with the Aio system of arsenite oxidation, decreasing the global As(III) oxidation rate. In addition, organic matter influences the solubility of iron oxides which often act as the main pitfalls of arsenic in soils. The concentration and nature of organic matter could therefore have a significant influence on the bioavailability of arsenic and hence on its environmental impact. The influence of organic matter on biological As(III) oxidation has not yet been determined in natural soils. In this context, soil amendment with organic matter during operations of phytostabilization or, considering diffuse pollutions, through agricultural practices, may affect the mobility and bio-availability of the toxic metalloid. The objective of the present project is to quantify the influence of organic matter

  12. Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

    Science.gov (United States)

    Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2018-06-01

    We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

  13. Dye-sensitized solar cell based on AZO/Ag/AZO multilayer transparent conductive oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Jin-He; Li, Ying [School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Duong, Thanh-Tung; Choi, Hyung-Jin [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon (Korea, Republic of)

    2013-04-15

    Highlights: ► AZO/Ag/AZO (AAA) multilayer was used for working electrode of DSSC cell. ► The 100 nm-thick Nb-doped TiO{sub 2} layer showed a good blocking effect. ► The DSSC cell by AAA TCO material showed the highest efficiency of about 3.25%. -- Abstract: Niobium-doped TiO{sub 2} blocking layer and Al-doped ZnO (AZO)/Ag/AZO (AAA) TCO layers were grown onto glass substrate using pulsed laser deposition (PLD) and direct current (dc)/radio-frequency (rf) sputtering at room temperature, respectively for dye-sensitized solar cell (DSSC) applications. The 100 nm-thick NTO layer showed a blocking effect for the oxygen diffusion into AAA layer and for the recombination of the electrons. The DSSC cell composed of the NTO (100 nm)/AAA (400 nm) showed the highest photo-electrical efficiency of about 3.25%. An insertion of aluminum foil between serrated clip and AAA (100 nm) TCO improved a photo-conversion efficiency of the DSSC.

  14. Dye-sensitized solar cell based on AZO/Ag/AZO multilayer transparent conductive oxide film

    International Nuclear Information System (INIS)

    Qi, Jin-He; Li, Ying; Duong, Thanh-Tung; Choi, Hyung-Jin; Yoon, Soon-Gil

    2013-01-01

    Highlights: ► AZO/Ag/AZO (AAA) multilayer was used for working electrode of DSSC cell. ► The 100 nm-thick Nb-doped TiO 2 layer showed a good blocking effect. ► The DSSC cell by AAA TCO material showed the highest efficiency of about 3.25%. -- Abstract: Niobium-doped TiO 2 blocking layer and Al-doped ZnO (AZO)/Ag/AZO (AAA) TCO layers were grown onto glass substrate using pulsed laser deposition (PLD) and direct current (dc)/radio-frequency (rf) sputtering at room temperature, respectively for dye-sensitized solar cell (DSSC) applications. The 100 nm-thick NTO layer showed a blocking effect for the oxygen diffusion into AAA layer and for the recombination of the electrons. The DSSC cell composed of the NTO (100 nm)/AAA (400 nm) showed the highest photo-electrical efficiency of about 3.25%. An insertion of aluminum foil between serrated clip and AAA (100 nm) TCO improved a photo-conversion efficiency of the DSSC

  15. Novel transparent conducting oxide: Anatase Ti1-xNb xO2

    International Nuclear Information System (INIS)

    Furubayashi, Yutaka; Hitosugi, Taro; Yamamoto, Yukio; Hirose, Yasushi; Kinoda, Go; Inaba, Kazuhisa; Shimada, Toshihiro; Hasegawa, Tetsuya

    2006-01-01

    Single-crystalline Ti 1-x Nb x O 2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO 3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti 1-x Nb x O 2 films with x ≥ 0.03 is 2-3 x 10 -4 Ω cm at room temperature. The carrier density of Ti 1-x Nb x O 2 , which is almost proportional to the Nb concentration, can be controlled in a range of 1 x 10 19 to 2 x 10 21 cm -3 . Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti 1-x Nb x O 2 is one of the promising candidates for the practical TCOs

  16. Transparent SiON/Ag/SiON multilayer passivation grown on a flexible polyethersulfone substrate using a continuous roll-to-roll sputtering system

    Science.gov (United States)

    2012-01-01

    We have investigated the characteristics of a silicon oxynitride/silver/silicon oxynitride [SiON/Ag/SiON] multilayer passivation grown using a specially designed roll-to-roll [R2R] sputtering system on a flexible polyethersulfone substrate. Optical, structural, and surface properties of the R2R grown SiON/Ag/SiON multilayer were investigated as a function of the SiON thickness at a constant Ag thickness of 12 nm. The flexible SiON/Ag/SiON multilayer has a high optical transmittance of 87.7% at optimized conditions due to the antireflection and surface plasmon effects in the oxide-metal-oxide structure. The water vapor transmission rate of the SiON/Ag/SiON multilayer is 0.031 g/m2 day at an optimized SiON thickness of 110 nm. This indicates that R2R grown SiON/Ag/SiON is a promising thin-film passivation for flexible organic light-emitting diodes and flexible organic photovoltaics due to its simple and low-temperature process. PMID:22221400

  17. Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

    International Nuclear Information System (INIS)

    Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

    1997-01-01

    The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

  18. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

    International Nuclear Information System (INIS)

    Wu, Guodong; Wan, Changjin; Wan, Qing; Zhou, Jumei; Zhu, Liqiang

    2014-01-01

    Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO 2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics. (paper)

  19. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    Willis, David A; Dreier, Adam L

    2009-01-01

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  20. Electrophoretic deposition of graphene oxide reinforced chitosan-hydroxyapatite nanocomposite coatings on Ti substrate.

    Science.gov (United States)

    Shi, Y Y; Li, M; Liu, Q; Jia, Z J; Xu, X C; Cheng, Y; Zheng, Y F

    2016-03-01

    Electrophoretic deposition (EPD) is a facile and feasible technique to prepare functional nanocomposite coatings for application in orthopedic-related implants. In this work, a ternary graphene oxide-chitosan-hydroxyapatite (GO-CS-HA) composite coating on Ti substrate was successfully fabricated by EPD. Coating microstructure and morphologies were investigated by scanning electron microscopy, contact angle test, Raman spectroscopy, Fourier transform infrared spectroscopy and thermogravimetric analysis. It was found GO-CS surface were uniformly decorated by HA nanoparticles. The potentiodynamic polarization test in simulated body fluid indicated that the GO-CS-HA coatings could provide effective protection of Ti substrate from corrosion. This ternary composite coating also exhibited good biocompatibility during incubation with MG63 cells. In addition, the nanocomposite coatings could decrease the attachment of Staphylococcus aureus.

  1. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  2. Bacterial growth and substrate degradation by BTX-oxidizing culture in response to salt stress.

    Science.gov (United States)

    Lee, Chi-Yuan; Lin, Ching-Hsing

    2006-01-01

    Interactions between microbial growth and substrate degradation are important in determining the performance of trickle-bed bioreactors (TBB), especially when salt is added to reduce biomass formation in order to alleviate media clogging. This study was aimed at quantifying salinity effects on bacterial growth and substrate degradation, and at acquiring kinetic information in order to improve the design and operation of TBB. Experiment works began by cultivating a mixed culture in a chemostat reactor receiving artificial influent containing a mixture of benzene, toluene, and xylene (BTX), followed by using the enrichment culture to degrade the individual BTX substrates under a particular salinity, which ranged 0-50 g l(-1) in batch mode. Then, the measured concentrations of biomass and residual substrate versus time were analyzed with the microbial kinetics; moreover, the obtained microbial kinetic constants under various salinities were modeled using noncompetitive inhibition kinetics. For the three substrates the observed bacterial yields appeared to be decreased from 0.51-0.74 to 0.20-0.22 mg mg(-1) and the maximum specific rate of substrate utilization, q, declined from 0.25-0.42 to 0.07-0.11 h(-1), as the salinity increased from 0 to 50 NaCl g l(-1). The NaCl acted as noncompetitive inhibitor, where the modeling inhibitions of the coefficients, K ( T(S)), were 22.7-29.7 g l(-1) for substrate degradation and K ( T(mu)), 13.0-19.0 g l(-1), for biomass formation. The calculated ratios for the bacterial maintenance rate, m (S), to q, further indicated that the percentage energy spent on maintenance increased from 19-24 to 86-91% as salinity level increased from 0 to 50 g l(-1). These results revealed that the bacterial growth was more inhibited than substrate degradation by the BTX oxidizers under the tested salinity levels. The findings from this study demonstrate the potential of applying NaCl salt to control excessive biomass formation in biotrickling filters.

  3. Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

    Science.gov (United States)

    Faraz, Tahsin; Knoops, Harm C M; Verheijen, Marcel A; van Helvoirt, Cristian A A; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M M

    2018-04-18

    Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO x and HfO x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN x and HfN x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO x were slightly improved whereas those of SiN x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for

  4. Influence of substrates on nitrogen removal performance and microbiology of anaerobic ammonium oxidation by operating two UASB reactors fed with different substrate levels

    Energy Technology Data Exchange (ETDEWEB)

    Tang Chongjian [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China); Zheng Ping, E-mail: pzheng@zju.edu.cn [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China); Hu Baolan; Chen Jianwei; Wang Caihua [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China)

    2010-09-15

    Both ammonium and nitrite act as substrates as well as potential inhibitors of anoxic ammonium-oxidizing (Anammox) bacteria. To satisfy demand of substrates for Anammox bacteria and to prevent substrate inhibition simultaneously; two strategies, namely high or low substrate concentration, were carefully compared in the operation of two Anammox upflow anaerobic sludge blanket (UASB) reactors fed with different substrate concentrations. The reactor working at relatively low influent substrate concentration (NO{sub 2}{sup -}N, 240 mg-N L{sup -1}) was shown to avoid the inhibition caused by nitrite and free ammonia. Using the strategy of low substrate concentration, a record super high volumetric nitrogen removal rate of 45.24 kg-N m{sup -3} day{sup -1} was noted after the operation of 230 days. To our knowledge, such a high value has not been reported previously. The evidence from transmission electron microscopy (TEM) showed that the morphology and ultrastructure of the Anammox cells in both the reactor enrichments was different.

  5. The oxidative DNA glycosylases of Mycobacterium tuberculosis exhibit different substrate preferences from their Escherichia coli counterparts.

    Science.gov (United States)

    Guo, Yin; Bandaru, Viswanath; Jaruga, Pawel; Zhao, Xiaobei; Burrows, Cynthia J; Iwai, Shigenori; Dizdaroglu, Miral; Bond, Jeffrey P; Wallace, Susan S

    2010-02-04

    The DNA glycosylases that remove oxidized DNA bases fall into two general families: the Fpg/Nei family and the Nth superfamily. Based on protein sequence alignments, we identified four putative Fpg/Nei family members, as well as a putative Nth protein in Mycobacterium tuberculosis H37Rv. All four Fpg/Nei proteins were successfully overexpressed using a bicistronic vector created in our laboratory. The MtuNth protein was also overexpressed in soluble form. The substrate specificities of the purified enzymes were characterized in vitro with oligodeoxynucleotide substrates containing single lesions. Some were further characterized by gas chromatography/mass spectrometry (GC/MS) analysis of products released from gamma-irradiated DNA. MtuFpg1 has substrate specificity similar to that of EcoFpg. Both EcoFpg and MtuFpg1 are more efficient at removing spiroiminodihydantoin (Sp) than 7,8-dihydro-8-oxoguanine (8-oxoG). However, MtuFpg1 shows a substantially increased opposite base discrimination compared to EcoFpg. MtuFpg2 contains only the C-terminal domain of an Fpg protein and has no detectable DNA binding activity or DNA glycosylase/lyase activity and thus appears to be a pseudogene. MtuNei1 recognizes oxidized pyrimidines on both double-stranded and single-stranded DNA and exhibits uracil DNA glycosylase activity. MtuNth recognizes a variety of oxidized bases, including urea, 5,6-dihydrouracil (DHU), 5-hydroxyuracil (5-OHU), 5-hydroxycytosine (5-OHC) and methylhydantoin (MeHyd). Both MtuNei1 and MtuNth excise thymine glycol (Tg); however, MtuNei1 strongly prefers the (5R) isomers, whereas MtuNth recognizes only the (5S) isomers. MtuNei2 did not demonstrate activity in vitro as a recombinant protein, but like MtuNei1 when expressed in Escherichia coli, it decreased the spontaneous mutation frequency of both the fpg mutY nei triple and nei nth double mutants, suggesting that MtuNei2 is functionally active in vivo recognizing both guanine and cytosine oxidation products

  6. Electrophoretic deposition of calcium silicate-reduced graphene oxide composites on titanium substrate

    DEFF Research Database (Denmark)

    Mehrali, Mehdi; Akhiani, Amir Reza; Talebian, Sepehr

    2016-01-01

    Calcium silicate (CS)/graphene coatings have been used to improve the biological and mechanical fixation of metallic prosthesis. Among the extraordinary features of graphene is its very high mechanical strength, which makes it an attractive nanoreinforcement material for composites. Calcium...... silicate-reduced graphene oxide (CS-rGO) composites were synthesized, using an in situ hydrothermal method. CS nanowires were uniformly decorated on the rGO, with an appropriate interfacial bonding. The CS-rGO composites behaved like hybrid composites when deposited on a titanium substrate by cathodic...

  7. Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations

    Science.gov (United States)

    Temizer, Namik K.; Nori, Sudhakar; Narayan, Jagdish

    2014-01-01

    We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110 μΩ-cm) values. The films grown in an ambient oxygen partial pressure (PO2) of 5 × 10-2 Torr and at growth temperatures from room temperature to 600 °C show semiconducting behavior, whereas samples grown at a PO2 of 1 × 10-3 Torr show metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The measured optical and transport properties were found to be a strong function of growth conditions implying that the drastic changes are brought about essentially by native point defects. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical, and magnetic properties and such changes in physical properties are controlled predominantly by the defect content.

  8. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-01-01

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  9. ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

    Directory of Open Access Journals (Sweden)

    Ming-Hong Lai

    2010-01-01

    Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

  10. Transparent bionanocomposite films based on chitosan and TEMPO-oxidized cellulose nanofibers with enhanced mechanical and barrier properties.

    Science.gov (United States)

    Soni, Bhawna; Hassan, El Barbary; Schilling, M Wes; Mahmoud, Barakat

    2016-10-20

    The development of biobased active films for use in food packaging is increasing due to low cost, environmental appeal, renewability and availability. The objective of this research was to develop an effective and complete green approach for the production of bionanocomposite films with enhanced mechanical and barrier properties. This was accomplished by incorporating TEMPO-oxidized cellulose nanofibers (2,2,6,6-tetramethylpiperidine-1-oxyl radical) into a chitosan matrix. An aqueous suspension of chitosan (100-75wt%), sorbitol (25wt%) and TEMPO-oxidized cellulose nanofibers (TEMPO-CNFs, 0-25wt%) were cast in an oven at 40°C for 2-4days. Films were preconditioned at 25°C and 50% RH for characterization. The surface morphology of the films was revealed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thermal properties and crystal structure of the films were evaluated by thermogravimetric analysis (TGA-DTG) and X-ray diffraction (XRD). Incorporation of TEMPO-CNFs enhanced the mechanical strength of the films due to the high aspect ratio (3-20nm width, and 10-100nm length) of TEMPO-CNFs and strong interactions with the chitosan matrix. Oxygen and water vapor transmission rates for films that are prepared with chitosan and TEMPO-CNFs (15-25wt%) were significantly reduced. Furthermore, these bionanocomposite films had good thermal stability. Use of TEMPO-CNFs in this method makes it possible to produce bionanocomposite films that are flexible, transparent, and thus have potential in food packaging applications. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  12. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  13. Substrate specificity and copper loading of the manganese-oxidizing multicopper oxidase Mnx from Bacillus sp. PL-12.

    Science.gov (United States)

    Butterfield, Cristina N; Tebo, Bradley M

    2017-02-22

    Manganese(ii) oxidation in the environment is thought to be driven by bacteria because enzymatic catalysis is many orders of magnitude faster than the abiotic processes. The heterologously purified Mn oxidase (Mnx) from marine Bacillus sp. PL-12 is made up of the multicopper oxidase (MCO) MnxG and two small Cu and heme-binding proteins of unknown function, MnxE and MnxF. Mnx binds Cu and oxidizes both Mn(ii) and Mn(iii), generating Mn(iv) oxide minerals that resemble those found on the Bacillus spore surface. Spectroscopic techniques have illuminated details about the metallo-cofactors of Mnx, but very little is known about their requirement for catalytic activity, and even less is known about the substrate specificity of Mnx. Here we quantify the canonical MCO Cu and persistent peripheral Cu bound to Mnx, and test Mnx oxidizing ability toward different substrates at varying pH. Mn(ii) appears to be the best substrate in terms of k cat , but its oxidation does not follow Michaelis-Menten kinetics, instead showing a sigmoidal cooperative behavior. Mnx also oxidizes Fe(ii) substrate, but in a Michaelis-Menten manner and with a decreased activity, as well as organic substrates. The reduced metals are more rapidly consumed than the larger organic substrates, suggesting the hypothesis that the Mnx substrate site is small and tuned for metal oxidation. Of biological relevance is the result that Mnx has the highest catalytic efficiency for Mn(ii) at the pH of sea water, especially when the protein is loaded with greater than the requisite four MCO copper atoms, suggesting that the protein has evolved specifically for Mn oxidation.

  14. Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

    International Nuclear Information System (INIS)

    Hwang, Myun-sung; Jeong, Bong-yong; Moon, Jooho; Chun, Sang-Ki; Kim, Jihoon

    2011-01-01

    Highlights: → Inkjet printing of ITO films. → Ag-grid was inkjet-printed in between two ITO layers in order to improve the electrical property. → Ag-grid inserted ITO films with 2 mm Ag-grid pitch showed the sheet resistance less than 3.4 Ω/sq and the transmittance higher than 82%. - Abstract: Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 deg. C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 deg. C under microwave.

  15. Visible spectroelectrochemical characterization of Geobacter sulfurreducens biofilms on optically transparent indium tin oxide electrode

    International Nuclear Information System (INIS)

    Jain, Anand; Gazzola, Giulio; Panzera, Aurora; Zanoni, Michele; Marsili, Enrico

    2011-01-01

    We report visible spectroelectrochemical (SEC) characterization of cytochrome c 552 (cyt c 552 ) in viable Geobacter sulfurreducens biofilms on tin-doped indium oxide (ITO) electrodes poised at 0.24 V vs. SHE. G. sulfurreducens biofilms were grown in minimal medium with acetate as electron donor (turnover conditions), followed by 24 h incubation in electron donor-depleted medium (non-turnover conditions). The electronic absorption spectra of G. sulfurreducens biofilms showed the lowest energy absorption band in the reduced state at 552 nm, which indicated excess of cyt c 552 in the biofilm. The spectra under non-turnover conditions displayed gradual reduction of the cyt c 552 , following the step-wise decrease of electrode potential from 0.0 V to −0.6 V vs. standard calomel electrode (SCE). The spectral changes were fully reversible in both positive and negative direction of the scan potential, with average midpoint potential value of −0.42 V vs. SCE. Confocal microscopy analysis revealed that the thickness of biofilms under turnover conditions and non-turnover conditions was approximately 35 and 3.5 μm, respectively. This is the first study to observe the reversible redox conversion of cyt c 552 in viable G. sulfurreducens biofilms.

  16. Thickness-self-controlled synthesis of porous transparent polyaniline-reduced graphene oxide composites towards advanced bifacial dye-sensitized solar cells

    Science.gov (United States)

    Wang, Yu-Sheng; Li, Shin-Ming; Hsiao, Sheng-Tsung; Liao, Wei-Hao; Yang, Shin-Yi; Tien, Hsi-Wen; Ma, Chen-Chi M.; Hu, Chi-Chang

    2014-08-01

    A powerful synthesis strategy is proposed for fabricating porous polyaniline-reduced graphene oxide (PANI-RGO) composites with transparency up to 80% and thickness from 300 to 1000 nm for the counter electrode (CE) of bifacial dye-sensitizing solar cells (DSSCs). The first step is to combine the in-situ positive charge transformation of graphene oxide (GO) through aniline (ANI) prepolymerization and the electrostatic adsorption of ANI oligomer-GO to effectively control the thickness of ultrathin PANI-GO films by adjusting pH of the polymerization media. In the second step, PANI-GO films are reduced with hydroiodic acid to simultaneously enhance the apparent redox activity for the I3-/I- couple and their electronic conductivity. Incorporating the RGO increases the transparency of PANI and facilitates the light-harvesting from the rear side. A DSSC assembled with such a transparent PANI-RGO CE exhibits an excellent efficiency of 7.84%, comparable to 8.19% for a semi-transparent Pt-based DSSC. The high light-harvesting ability of PANI-RGO enhances the efficiency retention between rear- and front-illumination modes to 76.7%, compared with 69.1% for a PANI-based DSSC. The higher retention reduces the power-to-weight ratio and the total cost of bifacial DSSCs, which is also promising in other applications, such as windows, power generators, and panel screens.

  17. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  18. Tribology study of reduced graphene oxide sheets on silicon substrate synthesized via covalent assembly.

    Science.gov (United States)

    Ou, Junfei; Wang, Jinqing; Liu, Sheng; Mu, Bo; Ren, Junfang; Wang, Honggang; Yang, Shengrong

    2010-10-19

    Reduced graphene oxide (RGO) sheets were covalently assembled onto silicon wafers via a multistep route based on the chemical adsorption and thermal reduction of graphene oxide (GO). The formation and microstructure of RGO were analyzed by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Raman spectroscopy, and water contact angle (WCA) measurements. Characterization by atomic force microscopy (AFM) was performed to evaluate the morphology and microtribological behaviors of the samples. Macrotribological performance was tested on a ball-on-plate tribometer. Results show that the assembled RGO possesses good friction reduction and antiwear ability, properties ascribed to its intrinsic structure, that is, the covalent bonding to the substrate and self-lubricating property of RGO.

  19. Development of wear resistant zirconium oxide thin films on stainless steel substrates

    International Nuclear Information System (INIS)

    Then, I.K.; Mujahid, M.; Zhang, B.

    2005-01-01

    The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 μm in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

  20. Development of wear resistant zirconium oxide thin films on stainless steel substrates

    Energy Technology Data Exchange (ETDEWEB)

    Then, I.K.; Mujahid, M. [School of Materials Engineering, Nanyang Technological Univ. (Singapore); Zhang, B. [Dou Yee Technologies Pte Ltd, Bedok Industrial Park C (Singapore)

    2005-07-01

    The present work deals specifically with the development of zirconium oxide thin film coatings on the stainless steel orthodontic bracket system by sputtering technique. Thin films of zirconium oxide have been deposited on injection molded stainless steel substrates using sputtering under controlled temperature and environment conditions. The deposited films, 1.5 {mu}m in thickness, were found to have a predominantly tetragonal structure with grain size of about 5 nm. The grain size was found to increase only slightly with increasing heat treatment time at 650 C. It has been shown that thin-film zirconia coatings with stable structure and good adhesion along with very low friction coefficient could be produced. (orig.)

  1. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  2. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  3. Electron transport within transparent assemblies of tin-doped indium oxide colloidal nanocrystals

    Science.gov (United States)

    Grisolia, J.; Decorde, N.; Gauvin, M.; Sangeetha, N. M.; Viallet, B.; Ressier, L.

    2015-08-01

    Stripe-like compact assemblies of tin-doped indium oxide (ITO) colloidal nanocrystals (NCs) are fabricated by stop-and-go convective self-assembly (CSA). Systematic evaluation of the electron transport mechanisms in these systems is carried out by varying the length of carboxylate ligands protecting the NCs: butanoate (C4), octanoate (C8) and oleate (C18). The interparticle edge-to-edge distance L0, along with a number of carbon atoms in the alkyl chain of the coating ligand, are deduced from small-angle x-ray scattering (SAXS) measurements and exhibit a linear relationship with a slope of 0.11 nm per carbon pair unit. Temperature-dependent resistance characteristics are analyzed using several electron transport models: Efros-Shklovskii variable range hopping (ES-VRH), inelastic cotunneling (IC), regular island array and percolation. The analysis indicated that the first two models (ES-VRH and IC) fail to explain the observed behavior, and that only simple activated transport takes place in these systems under the experimental conditions studied (T = 300 K to 77 K). Related transport parameters were then extracted using the regular island array and percolation models. The effective tunneling decay constant βeff of the ligands and the Coulomb charging energy EC are found to be around 5.5 nm-1 and 25 meV, respectively, irrespective of ligand lengths. The theoretical tunneling decay constant β calculated using the percolation model is in the range 9 nm-1. Electromechanical tests on the ITO nanoparticle assemblies indicate that their sensitivities are as high as ˜30 and remain the same regardless of ligand lengths, which is in agreement with the constant effective βeff extracted from regular island array and percolation models.

  4. Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices

    OpenAIRE

    Wang, Zhibing; Puls, Conor P.; Staley, Neal E.; Zhang, Yu; Todd, Aaron; Xu, Jian; Howsare, Casey A.; Hollander, Matthew J.; Robinson, Joshua A.; Liu, Ying

    2011-01-01

    Graphene has been used recently as a replacement for indium tin oxide (ITO) for the transparent electrode of an organic photovoltaic device. Due to its limited supply, ITO is considered as a limiting factor for the commercialization of organic solar cells. We explored the use of large-area graphene grown on copper by chemical vapor deposition (CVD) and then transferred to a glass substrate as an alternative transparent electrode. The transferred film was shown by scanning Raman spectroscopy m...

  5. Cortical substrate oxidation during hyperketonemia in the fasted anesthetized rat in vivo.

    Science.gov (United States)

    Jiang, Lihong; Mason, Graeme F; Rothman, Douglas L; de Graaf, Robin A; Behar, Kevin L

    2011-12-01

    Ketone bodies are important alternate brain fuels, but their capacity to replace glucose and support neural function is unclear. In this study, the contributions of ketone bodies and glucose to cerebral cortical metabolism were measured in vivo in halothane-anesthetized rats fasted for 36 hours (n=6) and receiving intravenous [2,4-(13)C(2)]-D-β-hydroxybutyrate (BHB). Time courses of (13)C-enriched brain amino acids (glutamate-C4, glutamine-C4, and glutamate and glutamine-C3) were measured at 9.4 Tesla using spatially localized (1)H-[(13)C]-nuclear magnetic resonance spectroscopy. Metabolic rates were estimated by fitting a constrained, two-compartment (neuron-astrocyte) metabolic model to the (13)C time-course data. We found that ketone body oxidation was substantial, accounting for 40% of total substrate oxidation (glucose plus ketone bodies) by neurons and astrocytes. D-β-Hydroxybutyrate was oxidized to a greater extent in neurons than in astrocytes (≈ 70:30), and followed a pattern closely similar to the metabolism of [1-(13)C]glucose reported in previous studies. Total neuronal tricarboxylic acid cycle (TCA) flux in hyperketonemic rats was similar to values reported for normal (nonketotic) anesthetized rats infused with [1-(13)C]glucose, but neuronal glucose oxidation was 40% to 50% lower, indicating that ketone bodies had compensated for the reduction in glucose use.

  6. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  7. The influence of the texture and microstructure of a Zr-2.5Nb substrate upon the oxidation kinetics

    International Nuclear Information System (INIS)

    Lin, J.; Cao Xiaohui; Szpunar, J.A.

    2002-01-01

    The thin oxide layer growing on the zirconium alloy is dense and adherent and therefore is protective against further oxidation and hydrogen ingress, which is deleterious to zirconium pressure tube used in nuclear power stations because it facilitates formation of zirconium hydrides. Heat treatment and other surface modification methods were applied to zirconium alloys and the texture was investigated. Thermogravimetric analytic (TGA) was used for oxidation kinetics studies. The oxidation kinetics data show the variation of the oxidation rate due to the difference of texture and microstructure and the oxidation resistance is improved after the substrate is cold worked and heat treated. After cold work and heat treatment, the texture of substrate changes from (11-20)[1-100] to (11-23)[1-100]. (orig.)

  8. Intrinsic white-light emission from zinc oxide nanorods heterojunctions on large-area substrates

    Science.gov (United States)

    Willander, Magnus; Nur, O.; Zaman, S.; Zainelabdin, A.; Amin, G.; Sadaf, J. R.; Israr, M. Q.; Bano, N.; Hussain, I.; Alvi, N. H.

    2011-02-01

    Zinc oxide (ZnO) and especially in the nanostructure form is currently being intensively investigated world wide for the possibility of developing different new photonic devices. We will here present our recent findings on the controlled low temperature chemical growth of ZnO nanorods (NRs) on different large area substrates. Many different heterojunctions of ZnO NRs and p-substrates including those of crystalline e.g. p-GaN, p-SiC or amorphous nature e.g. p-polymer coated plastic and p-polymer coated paper will be shown. Moreover, the effect of the p-electrode of these heterojunctions on tuning the emitted wavelength and changing the light quality will be discussed. An example using ZnO NR/p-GaN will be shown and the electrical and electro-optical characteristics will be analyzed. For these heterojunctions the effect of post growth annealing and its effect on the electroluminescence (EL) spectrum will be shown. Finally, intrinsic white light emitting diodes based on ZnO NRs on foldable and disposable amorphous substrates (plastic and paper) will also be presented.

  9. Synthesis of reduced graphene oxide/ZnO nanorods composites on graphene coated PET flexible substrates

    International Nuclear Information System (INIS)

    Huang, Lei; Guo, Guilue; Liu, Yang; Chang, Quanhong; Shi, Wangzhou

    2013-01-01

    Graphical abstract: - Highlights: • ZnO nanorods synthesized on CVD-graphene and rGO surfaces, respectively. • ZnO/CVD-graphene and ZnO/rGO form a distinctive porous 3D structure. • rGO/ZnO nanostructures possibility in energy storage devices. - Abstract: In this work, reduced graphene oxide (rGO)/ZnO nanorods composites were synthesized on graphene coated PET flexible substrates. Both chemical vapor deposition (CVD) graphene and reduced graphene oxide (rGO) films were prepared following by hydrothermal growth of vertical aligned ZnO nanorods. Reduced graphene sheets were then spun coated on the ZnO materials to form a three dimensional (3D) porous nanostructure. The morphologies of the ZnO/CVD graphene and ZnO/rGO were investigated by SEM, which shows that the ZnO nanorods grown on rGO are larger in diameters and have lower density compared with those grown on CVD graphene substrate. As a result of fact, the rough surface of nano-scale ZnO on rGO film allows rGO droplets to seep into the large voids of ZnO nanorods, then to form the rGO/ZnO hierarchical structure. By comparison of the different results, we conclude that rGO/ZnO 3D nanostructure is more desirable for the application of energy storage devices

  10. Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

    Czech Academy of Sciences Publication Activity Database

    Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

    2018-01-01

    Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

  11. In-situ GISAXS study on the oxidation behavior of liquid Ga on Ni(Cu)/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Weidong [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Liu, Mingling [Department of Mechanical and Electrical Engineering, Qinhuangdao Institute of Technology, Qinhuangdao 066100 (China); Wu, Zhaojun [Department of Practice Teaching and Equipment Management, Qiqihar University, Qiqihar 161006 (China); Xing, Xueqing; Mo, Guang; Wu, Zhonghua [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Liu, Hong, E-mail: lhong68@sina.com.cn [School of Biomedical Engineering, Capital Medical University, Beijing 100069 (China)

    2015-11-01

    Liquid Ga could be used as a flexible heat-transfer medium or contact medium in the synchrotron-radiation-based instruments. The chemical stability of liquid Ga on other metal surface determines the serviceability of liquid Ga. In this paper, the oxidation evolutions of liquid Ga on Ni and Cu substrates have been investigated by in-situ grazing incidence small angle X-ray scattering (GISAXS) as a function of substrate temperature. The liquid Ga on Ni and Cu substrates shows different oxidation behaviors. A successive and slower oxidation from oxide clusters to oxide layer takes place with temperature increasing from 25 to 190 °C on the surface of the Ga/Ni/Si specimen, but a quick oxidation occurs on the entire surface of the Ga/Cu/Si specimen at the initial 25 °C. The subsequent heating increases the surface roughness of both liquid Ga, but increases simultaneously the surface curvature of the Ga/Cu/Si specimen. The understanding of the substrate-dependent oxidation behavior of liquid Ga is beneficial to its application as a heat-transfer medium.

  12. Nanoscale current spreading analysis in solution-processed graphene oxide/silver nanowire transparent electrodes via conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, Joseph E.; Perumal, Ajay; Bradley, Donal D. C.; Stavrinou, Paul N.; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)

    2016-05-21

    We use conductive atomic force microscopy (CAFM) to study the origin of long-range conductivity in model transparent conductive electrodes composed of networks of reduced graphene oxide (rGO{sub X}) and silver nanowires (AgNWs), with nanoscale spatial resolution. Pristine networks of rGO{sub X} (1–3 monolayers-thick) and AgNWs exhibit sheet resistances of ∼100–1000 kΩ/□ and 100–900 Ω/□, respectively. When the materials are deposited sequentially to form bilayer rGO{sub X}/AgNW electrodes and thermally annealed at 200 °C, the sheet resistance reduces by up to 36% as compared to pristine AgNW networks. CAFM was used to analyze the current spreading in both systems in order to identify the nanoscale phenomena responsible for this effect. For rGO{sub X} networks, the low intra-flake conductivity and the inter-flake contact resistance is found to dominate the macroscopic sheet resistance, while for AgNW networks the latter is determined by the density of the inter-AgNW junctions and their associated resistance. In the case of the bilayer rGO{sub X}/AgNWs' networks, rGO{sub X} flakes are found to form conductive “bridges” between AgNWs. We show that these additional nanoscopic electrical connections are responsible for the enhanced macroscopic conductivity of the bilayer rGO{sub X}/AgNW electrodes. Finally, the critical role of thermal annealing on the formation of these nanoscopic connections is discussed.

  13. Effect of substrate availability on nitrous oxide production by deammonification processes under anoxic conditions.

    Science.gov (United States)

    Schneider, Yvonne; Beier, Maike; Rosenwinkel, Karl-Heinz

    2012-05-01

    Due to its high global warming potential, nitrous oxide (N(2)O) emissions from wastewater treatment processes have recently received a high degree of attention. Nevertheless, there is still a lack of information regarding the microbiological processes leading to N(2)O production. In this study, two lab-scale sequencing batch reactors were operated with deammonification biomass to investigate the role of denitrification and the influence of substrate availability regarding N(2)O formation during the anoxic phase of deammonification. Three different operational phases were established: within the first phase conversion by anammox was favoured and after a transition phase, denitrification activity was promoted. Low nitrous oxide production was observed during stable operation aiming for anammox conversion. Pulsed inflow of the wastewater containing ammonium (NH(4)(+)) and nitrite (NO(2)(-)) led to increased N(2)O production rates. Within the period of denitrification as dominating nitrogen conversion process, the nitrous oxide concentration level was higher during continuous inflow conditions, but the reaction to pulsed inflow was less pronounced. The results indicated that denitrification was responsible for N(2)O formation from the deammonification biomass. Operational settings to achieve suppression of denitrification processes to a large extend were deducted from the results of the experiments. © 2012 The Authors. Microbial Biotechnology © 2012 Society for Applied Microbiology and Blackwell Publishing Ltd.

  14. Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

    Science.gov (United States)

    Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

    2018-05-01

    Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

  15. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  16. Plasma surface oxidation of 316L stainless steel for improving adhesion strength of silicone rubber coating to metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Latifi, Afrooz, E-mail: afroozlatifi@yahoo.com [Department of Biomaterials, Biomedical Engineering Faculty, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Imani, Mohammad [Novel Drug Delivery Systems Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/115, Tehran (Iran, Islamic Republic of); Khorasani, Mohammad Taghi [Biomaterials Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/159, Tehran (Iran, Islamic Republic of); Daliri Joupari, Morteza [Animal and Marine Biotechnology Dept., National Institute of Genetic Engineering and Biotechnology, P.O. Box 14965/161, Tehran (Iran, Islamic Republic of)

    2014-11-30

    Highlights: • Stainless steel 316L was surface modified by plasma surface oxidation (PSO) and silicone rubber (SR) coating. • On the PSO substrates, concentration of oxide species was increased ca. 2.5 times comparing to non-PSO substrates. • The surface wettability was improved to 12.5°, in terms of water contact angle, after PSO. • Adhesion strength of SR coating on the PSO substrates was improved by more than two times comparing to non-PSO ones. • After pull-off test, the fractured area patterns for SR coating were dependent on the type of surface modifications received. - Abstract: Stainless steel 316L is one of the most widely used materials for fabricating of biomedical devices hence, improving its surface properties is still of great interest and challenging in biomaterial sciences. Plasma oxidation, in comparison to the conventional chemical or mechanical methods, is one of the most efficient methods recently used for surface treatment of biomaterials. Here, stainless steel specimens were surface oxidized by radio-frequency plasma irradiation operating at 34 MHz under pure oxygen atmosphere. Surface chemical composition of the samples was significantly changed after plasma oxidation by appearance of the chromium and iron oxides on the plasma-oxidized surface. A wettable surface, possessing high surface energy (83.19 mN m{sup −1}), was observed after plasma oxidation. Upon completion of the surface modification process, silicone rubber was spray coated on the plasma-treated stainless steel surface. Morphology of the silicone rubber coating was investigated by scanning electron microscopy (SEM). A uniform coating was formed on the oxidized surface with no delamination at polymer–metal interface. Pull-off tests showed the lowest adhesion strength of coating to substrate (0.12 MPa) for untreated specimens and the highest (0.89 MPa) for plasma-oxidized ones.

  17. Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

    Energy Technology Data Exchange (ETDEWEB)

    Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

    2016-05-01

    Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

  18. Thermal bubble inkjet printing of water-based graphene oxide and graphene inks on heated substrate

    Science.gov (United States)

    Huang, Simin; Shen, Ruoxi; Qian, Bo; Li, Lingying; Wang, Wenhao; Lin, Guanghui; Zhang, Xiaofei; Li, Peng; Xie, Yonglin

    2018-04-01

    Stable-jetting water-based graphene oxide (GO) and graphene (GR) inks without any surfactant or stabilizer are prepared from an unstable-jetting water-based starting solvent, with many thermal bubble inkjet satellite drops, by simply increasing the material concentration. The concentration-dependent thermal bubble inkjet droplet generation process is studied in detail. To overcome the low concentration properties of water-based thermal bubble inkjet inks, the substrate temperature is tuned below 60 °C to achieve high-quality print lines. Due to the difference in hydrophilicity and hydrophobicity of the 2D materials, the printed GO lines show a different forming mechanism from that of the GR lines. The printed GO lines are reduced by thermal annealing and by ascorbic acid, respectively. The reduced GO lines exhibit electrical conductivity of the same order of magnitude as that of the GR lines.

  19. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

    2005-12-22

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

  20. Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

    International Nuclear Information System (INIS)

    Seveno, R.; Braud, A.; Gundel, H.W.

    2005-01-01

    In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

  1. Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2012-07-01

    We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.