WorldWideScience

Sample records for total sputtering yield

  1. Measurements of beryllium sputtering yields at JET

    Science.gov (United States)

    Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

    2011-08-01

    The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

  2. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi

    1994-01-01

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  3. Variables affecting simulated Be sputtering yields

    Energy Technology Data Exchange (ETDEWEB)

    Björkas, C., E-mail: carolina.bjorkas@helsinki.fi; Nordlund, K.

    2013-08-15

    Since beryllium is a strong candidate for the main plasma-facing material in future fusion reactors, its sputtering behaviour plays an important role in predicting the reactor’s life-time. Consensus about the actual sputtering yields has not yet been achieved, as observations are influenced by experimental method and/or studied sample. In this work, the beryllium sputtering due to deuterium and beryllium self-bombardment is analyzed using molecular dynamics simulations. The main methodological aspects that influence the outcome, such as flux and fluence of the bombardment, are highlighted, and it is shown that the simulated yields also depend on the sample structure and deuterium content.

  4. Sputtering yield calculation for binary target

    International Nuclear Information System (INIS)

    Jimenez-Rodriguez, J.J.; Rodriguez-Vidal, M.; Valles-Abarca, J.A.

    1979-01-01

    The generalization for binary targets, of the ideas proposed by Sigmund for monoatomic targets, leads to a set of coupled intergrodifferential equations for the sputtering functions. After moment decomposition, the final formulae are obtained by the standard method based on the Laplace Transform, where the inverse transform is made with the aid of asymptotic expansions in the limit of very high projectile energy as compared to the surface binding energy. The possible loss of stoichiometry for binary targets is analyzed. Comparison of computed values of sputtering yield for normal incidence, with experimental results shows good agreement. (author)

  5. Influence of surface topography on the sputtering yields of silver

    International Nuclear Information System (INIS)

    Pan Jisheng; Wang Zhenxia; Tao Zhenlan; Zhang Jiping

    1992-01-01

    The sputtering yields of silver have been measured as a function of the fluence of incident Ar + ions (27 keV) using the collector technique and RBS analysis. The irradiated surface was examined by scanning electron microscopy (SEM). It is shown that the sputtering yields of surfaces with topography are enhanced relative to smooth surfaces of silver, but the extent of the enhancement depends on the irradiation dose. The experimental results can be explained assuming that the surface topography and sputtering yield are a function of incident angle. It is obvious that the surface topography is an important factor to influence the sputtering yield. The term ''apparent sputtering yield'' has specifically been used when referring to the experimental sputtering yield of a surface with topography, to emphasize the difference with a smooth surface. (orig.)

  6. Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

    International Nuclear Information System (INIS)

    Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

    2009-01-01

    We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

  7. Fluence-dependent sputtering yield of micro-architectured materials

    Energy Technology Data Exchange (ETDEWEB)

    Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

    2017-06-15

    Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

  8. Measurements of sputtering yields for low-energy plasma ions

    International Nuclear Information System (INIS)

    Nishi, M.; Yamada, M.; Suckewer, S.; Rosengaus, E.

    1979-04-01

    Sputtering yields of various wall/limiter materials of fusion devices have been extensively measured in the relevant plasma environment for low-energy light ions (E 14 cm -3 and electron temperature up to 10eV. Target materials used were C (graphite), Ti, Mo, Ta, W, and Fe (stainless steel). In order to study the dependence of the sputtering yields on the incident energy of ions, the target samples were held at negative bias voltage up to 300V. The sputtering yields were determined by a weight-loss method and by spectral line intensity measurements. The data obtained in the present experiment agree well with those previously obtained at the higher energies (E greater than or equal to 200eV) by other authors using different schemes; the present data also extend to substantially lower energies (E approx. > 30eV) than hitherto

  9. Extended incident-angle dependence formula of sputter yield

    International Nuclear Information System (INIS)

    Ono, T.; Shibata, K.; Muramoto, T.; Kenmotsu, T.; Li Z.; Kawamura, T.

    2006-06-01

    We extend a new semi-empirical formula for incident-angle dependence of normalized sputter yield that includes the contribution to sputter yield from the direct knock-out process that was not considered in the previously proposed one. Three parameters included in the new one are estimated for data calculated with ACAT code for D + ions incident obliquely on C, Fe and W materials in incident-energy regions from several tens of eV to 10 keV. Then, the parameters are expressed with functions of incident energy. The formula with the functions derived well reproduces that using the ACAT data in the whole energy range. (author)

  10. Combined sputtering yield and surface topography development studies on Si

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

    1981-01-01

    The sputtering yield-incidence angle function has been measured for 8 keV Ar + ions incident on Si by direct scanning electron microscope observation of the depths of sputtered craters on substrate boundaries. This function displays a maximum sputtering yield at an angle thetasub(p) approximately equal to 40 0 to the surface normal. The sequential ion fluence dependence of features developed beneath local surface contaminant was then studied, quasi dynamically, in the same on-line ion source-S.E.M. system. During erosion of the contaminant a steeply elevated pillar of Si forms, which then transforms to a cone, again of high elevation angle >>thetasub(p). This cone is gradually eroded into the surrounding surface with no special significance associated with orientations of angle thetasub(p). Pedal depressions surrounding the pillar-cone system are also noted. The reasons for these observations and their relevance to ion beam surface channel etching are discussed. (Auth.)

  11. Giant metal sputtering yields induced by 20-5000 keV/atom gold clusters

    International Nuclear Information System (INIS)

    Andersen, H.H.; Brunelle, A.; Della-Negra, S.; Depauw, J.; Jacquet, D.; Le Beyec, Y.

    1997-01-01

    Very large non-linear effects have been found in cluster-induced metal sputtering over a broad projectile energy interval for the first time. Recently available cluster beams from tandem accelerators have allowed sputtering yield measurements to be made with Au 1 to Au 5 from 20 keV/atom to 5 MeV/atom. The cluster-sputtering yield maxima were found at the same total energy but not at the same energy/atom as expected. For Au 5 a yield as high as 3000 was reached at 150 keV/atom while the Au 1 yield was only 55 at the same velocity. The Sigmund-Claussen thermal spike theory, which fits published data at low energy, cannot reproduce our extended new data set. (author)

  12. Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

    International Nuclear Information System (INIS)

    Qian, H X; Zeng, X R; Zhou, W

    2010-01-01

    Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

  13. NIF total neutron yield diagnostic

    International Nuclear Information System (INIS)

    Cooper, Gary W.; Ruiz, Carlos L.

    2001-01-01

    We have designed a total neutron yield diagnostic for the National Ignition Facility (NIF) which is based on the activation of In and Cu samples. The particular approach that we have chosen is one in which we calibrate the entire counting system and which we call the ''F factor'' method. In this method, In and/or Cu samples are exposed to known sources of DD and DT neutrons. The activated samples are then counted with an appropriate system: a high purity Ge detector for In and a NaI coincidence system for Cu. We can then calculate a calibration factor, which relates measured activity to total neutron yield. The advantage of this approach is that specific knowledge of such quantities as cross sections and detector efficiencies is not needed. Unless the actual scattering environment of the NIF can be mocked up in the calibration experiment, the F factor will have to be modified using the results of a numerical simulation of the NIF scattering environment. In this article, the calibration factor methodology will be discussed and experimental results for the calibration factors will be presented. Total NIF neutron yields of 10 9 --10 19 can be measured with this method assuming a 50 cm stand-off distance can be employed for the lower yields

  14. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    Science.gov (United States)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  15. On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

    International Nuclear Information System (INIS)

    Chadderton, L.T.

    1977-01-01

    It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

  16. Sputtering yields of carbon based materials under high particle flux with low energy

    Science.gov (United States)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-04-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

  17. Sputtering yields of carbon based materials under high particle flux with low energy

    International Nuclear Information System (INIS)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-01-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

  18. Energy dependence of ion-induced sputtering yields from monoatomic solids at normal incidence

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Tawara, Hiro.

    1995-03-01

    The yields of the ion-induced sputtering from monoatomic solids at normal incidence for various ion-target combinations are presented graphically as a function of the incident ion energy. In order to fill the lack of the experimental data, the sputtering yields are also calculated by the Monte Carlo simulation code ACAT for some ion-target combinations. Each graph shows available experimental data points and the ACAT data, together with the sputtering yields calculated by the present empirical formula, whose parameters are determined by the best-fit to available data. (author)

  19. SiO2-Ta2O5 sputtering yields: simulated and experimental results

    International Nuclear Information System (INIS)

    Vireton, E.; Ganau, P.; Mackowski, J.M.; Michel, C.; Pinard, L.; Remillieux, A.

    1994-09-01

    To improve mirrors coating, we have modeled sputtering of binary oxide targets using TRIM code. First, we have proposed a method to calculate TRIM input parameters using on the one hand thermodynamic cycle and on the other hand Malherbe's results. Secondly, an iterative processing has provided for oxide steady targets caused by ionic bombardment. Thirdly, we have exposed a model to get experimental sputtering yields. Fourthly, for (Ar - SiO 2 ) pair, we have determined that steady target is a silica one. A good agreement between simulated and experimental yields versus ion incident angle has been found. For (Ar - Ta 2 O 5 ) pair, we have to introduce preferential sputtering concept to explain discrepancy between simulation and experiment. In this case, steady target is tantalum monoxide. For (Ar - Ta(+O 2 ) pair, tantalum sputtered by argon ions in reactive oxygen atmosphere, we have to take into account new concept of oxidation stimulated by ion beam. We have supposed that tantalum target becomes a Ta 2 O 5 one in reactive oxygen atmosphere. Then, following mechanism is similar to previous pair. We have obtained steady target of tantalum monoxide too. Comparison between simulated and experimental sputtering yields versus ion incident angle has given very good agreement. By simulation, we have found that tantalum monoxide target has at least 15 angstrom thickness. Those results are compatible with Malherbe's and Taglauer's ones. (authors)

  20. Dependence of energy per molecule on sputtering yields with reactive gas cluster ions

    International Nuclear Information System (INIS)

    Toyoda, Noriaki; Yamada, Isao

    2010-01-01

    Gas cluster ions show dense energy deposition on a target surface, which result in the enhancement of chemical reactions. In reactive sputtering with gas cluster ions, the energy per atom or molecule plays an important role. In this study, the average cluster size (N, the number of atoms or molecules in a cluster ion) was controlled; thereby the dependences of the energy per molecule on the sputtering yields of carbon by CO 2 cluster ions and that of Si by SF 6 /Ar mixed gas cluster ions were investigated. Large CO 2 cluster ions with energy per molecule of 1 eV showed high reactive sputtering yield of an amorphous carbon film. However, these ions did not cause the formation of large craters on a graphite surface. It is possible to achieve very low damage etching by controlling the energy per molecule of reactive cluster ions. Further, in the case of SF 6 /Ar mixed cluster ions, it was found that reactive sputtering was enhanced when a small amount of SF 6 gas (∼10%) was mixed with Ar. The reactive sputtering yield of Si by one SF 6 molecule linearly increased with the energy per molecule.

  1. Energy dependence of sputtering yields of Be, Be-C and Be-W films by Be{sup +}-ions

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, S.N.; Guseva, M.I.; Gureev, V.M.; Neumoin, V.E.; Stoljarova, V.G. [Russian Research Center Kurchatov Inst., Moscow (Russian Federation)

    1998-01-01

    The energy dependence measurements of Be, Be-C and Be-W deposited layer sputtering yields by Be{sup +}-ions were performed. The ion energy was varied in the range (0.3-5.0) keV. The temperature in the process of irradiation was sustained at the level of 670 K. The mixed layers were prepared by simultaneous sputtering of pair targets, Be and C, Be and W, and Be-targets with Ar{sup +}- and Be{sup +}-ions and codeposition of the sputtered atoms on silicon collectors The codeposited layer thickness was changed in the range of (500-1000) nm. The content of oxigen in the Be, Be-C, Be-W deposited layers did not exceed 20 at.%. The mixed layer sputtering yields were compared with the experimental and calculated data, obtained for the self-sputtering yields of beryllium and carbon. It was found that the sputtering yields of the Be-C and Be deposited layers by Be{sup +}-ions in the energy range (0.3-5.0) keV are within the range between the corresponding self-sputtering yields for Be and C. The sputtering yields for the mixture Be-W are close to the corresponding self-sputtering yields of beryllium. (author)

  2. Analytical evaluation for the sputtering yield of monoatomic solids at normal ion incidence

    International Nuclear Information System (INIS)

    Shao Qiyun; Pan Zhengying

    1994-01-01

    A universal formula of sputtering yield for normal incidence of mono-energetic ions on single element targets is presented. The results based on this method are compared with the Monte Carlo simulation and the experimental data. By means of Wilcoxon two-sample paired signed rank test, the statistically significant difference of the above results is discussed

  3. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    Science.gov (United States)

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  4. Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Cumpson, Peter J.; Portoles, Jose F.; Barlow, Anders J.; Sano, Naoko [National EPSRC XPS User' s Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

    2013-09-28

    Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

  5. Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

    2015-07-01

    A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

  6. Tungsten self-sputtering yield with different incidence angles and target temperatures

    International Nuclear Information System (INIS)

    Bandourko, V.; Nakamura, K.; Akiba, M.; Jimbou, R.

    1998-01-01

    The self-sputtering of different types of tungsten due to 1 keV W + bombardment at temperatures of 25 C and 600 C and incident angles in the range of 30-60 was studied by means of the weight loss method. The experimental data at room temperature agreed reasonably with the results of TRIM calculations. Enhanced self-sputtering yields due to beam-induced desorption of WO 2 were found at a temperature of 600 C. The weight loss of W-Cu composite is larger than that of the CVD-W and ps-W under the same irradiation conditions due to the selective removal of copper. (orig.)

  7. Molecular dynamics simulations with electronic stopping can reproduce experimental sputtering yields of metals impacted by large cluster ions

    Science.gov (United States)

    Tian, Jiting; Zhou, Wei; Feng, Qijie; Zheng, Jian

    2018-03-01

    An unsolved problem in research of sputtering from metals induced by energetic large cluster ions is that molecular dynamics (MD) simulations often produce sputtering yields much higher than experimental results. Different from the previous simulations considering only elastic atomic interactions (nuclear stopping), here we incorporate inelastic electrons-atoms interactions (electronic stopping, ES) into MD simulations using a friction model. In this way we have simulated continuous 45° impacts of 10-20 keV C60 on a Ag(111) surface, and found that the calculated sputtering yields can be very close to the experimental results when the model parameter is appropriately assigned. Conversely, when we ignore the effect of ES, the yields are much higher, just like the previous studies. We further expand our research to the sputtering of Au induced by continuous keV C60 or Ar100 bombardments, and obtain quite similar results. Our study indicates that the gap between the experimental and the simulated sputtering yields is probably induced by the ignorance of ES in the simulations, and that a careful treatment of this issue is important for simulations of cluster-ion-induced sputtering, especially for those aiming to compare with experiments.

  8. Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

    Science.gov (United States)

    Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

    1982-01-01

    Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

  9. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  10. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  11. Angular distributions and total yield of laser ablated silver

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Nordskov, A.; Schou, Jørgen

    1997-01-01

    The angular distribution of laser ablated silver has been measured in situ with a newly constructed setup with an array of microbalances. The distribution is strongly peaked in the forward direction corresponding to cospθ, where p varies between 5 and 9 for laser fluences from 2 to 7 J/cm2 at 355...... nm for a beam spot of 0.015 cm2. The total deposited yield is of the order 1015 Ag-atoms per pulse....

  12. Noble-gas ion sputtering yield of gold and copper: Dependence on the energy and angle of incidence of the projectiles

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Florio, A.; Baragiola, R.A.; Jakas, M.M.; Alonso, E.V.; Ferron, J.

    1987-02-15

    We have measured the sputtering yield of Au and Cu targets as a function of energy and the angle of incidence of noble-gas projectiles in the energy range 2--50 keV. The experimental results were compared with the analytical theory of sputtering and with computer simulations. Our study indicates that the linear-cascade model is applicable only asymptotically for low nuclear stopping powers.

  13. Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S C; Yamaguchi, S; Kataoka, Y; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering; Satou, M; Fujimoto, F

    1982-01-01

    Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

  14. Sputtering yields of Si and Ni from the I sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

    International Nuclear Information System (INIS)

    Kim, Su-Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori.

    1982-01-01

    Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar + ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi 2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy. (author)

  15. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    Energy Technology Data Exchange (ETDEWEB)

    Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  16. Anomalously high yield of doubly charged Si ions sputtered from cleaned Si surface by keV neutral Ar impact

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.; Morita, K. E-mail: k-morita@mail.nucl.nagoya-u.ac.jp; Dhole, S.D.; Ishikawa, D

    2001-08-01

    The energy spectra of positively charged and neutral species ejected from the Si(1 1 1) surfaces by keV Ar impact have been measured by means of a combined technique of the time-of-flight (TOF) analysis with the multi-photon resonance ionization spectroscopy (MPRIS). It is shown that positively charged species of Si{sup +}, Si{sup 2+} and SiO{sup +} are ejected from the as-cleaned 7x7 surface by 11 keV Ar impact. It is also shown that Ar sputter cleaning of the as-cleaned 7x7 surface for 14 min at the flux of 2x10{sup 13}/cm{sup 2}s removes completely the oxygen impurity and the yields of Si{sup 2+} is comparable to that of Si{sup +}. Moreover, the ionization probability of Si atoms sputtered is shown to be expressed as an exponential function of the inverse of their velocity. The production mechanism for the doubly charged Si ion is discussed based on the L-shell ionization of Si atoms due to quasi-molecule formation in the collisions of the surface atoms with energetic recoils and subsequent Auger decay of the L-shell vacancy to doubly ionized Si ions.

  17. Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

    Science.gov (United States)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

  18. Angular dependence of sputtering yield of TiSi sub 2 layers and analysis of titanium disilicide by SIMS and SCANIIR methods

    Energy Technology Data Exchange (ETDEWEB)

    Antonov, S L; Valiev, K A; Vasiliev, A G; Orlikovsky, A A [AN SSSR, Moscow (USSR). Inst. of Physics and Technology

    1989-11-01

    The values of sputtering yields of TiSi{sub 2}, Ti and Si layers are determined for Ar{sup +} (8 keV) bombardment at angles 0-80{sup 0}. It is shown that the theoretical functions that we have suggested for TiSi{sub 2} sputtering yields from angular Ar{sup +} bombardment, which are based on models of bicomponent compounds sputtering under normal ion bombardment, are in good agreement with the experimental curve for TiSi{sub 2}. The calibration curves for the determination of TiSi{sub x} layer compositions by SIMS and SCANIIR methods (in dynamic regime) are presented. It is shown with the help of the static SIMS method (E{sub AR+} = 3 keV) that not only can the TiSi{sub x} composition be determined but the TiSi{sub 2} crystal phase can also be identified. (author).

  19. Sputtering calculations with the discrete ordinated method

    International Nuclear Information System (INIS)

    Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

    1977-01-01

    The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

  20. MD simulation of cluster formation during sputtering

    International Nuclear Information System (INIS)

    Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

    2001-01-01

    The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

  1. HIGH ECCENTRICITY EOQ TOTAL COST FUNCTION YIELDS JIT RESULTs

    Directory of Open Access Journals (Sweden)

    Willian Roach

    2010-06-01

    Full Text Available No estoque de bens perecíveis, o custo de armazenamento H é muito maior do que o previsto na fórmula clássica do lote econômico do pedido (EOQ. Para bens perecíveis, a função custo total no EOQ é um pico e não uma reta horizontal. Esta forma pontiaguda leva o modelo EOQ a produzir entregas just in time (JIT - resultados semelhantes. O efeito pontiagudo (excentricidade da curva de custo total do lote econômico EOQ depende apenas do custo de armazenamento (H e não da demanda anual (D ou do custo do pedido (S. D e S determinam o nível (altura da curva de custo total do estoque (TC, mas não a forma.

  2. Formation of large clusters during sputtering of silver

    International Nuclear Information System (INIS)

    Staudt, C.; Heinrich, R.; Wucher, A.

    2000-01-01

    We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

  3. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  4. Sputtering in a glow discharge ion source - pressure dependence: theory and experiment

    International Nuclear Information System (INIS)

    Mason, R.S.; Pichilingi, Melanie

    1994-01-01

    A simplified theoretical expression has been developed for a glow discharge to show how the average cathode erosion rate (expressed as the number of atoms per ion of the total bombarding flux) varies with primary sputter yield, pressure, 'diffusion length' and sputtered atom 'stopping' cross section. An inverse pressure dependence is predicted which correlates well with experiment in the 2 and He, tend to converge. It is suggested that this could be due to a change in the mechanism to self-sputtering. Under constant conditions, the erosion rates of different cathode materials still correlate quite well with the differences in their primary sputter yields. (author)

  5. Sputtering of Au induced by single Xe ion impacts

    International Nuclear Information System (INIS)

    Birtcher, R. C.; Donnelly, S. E.

    1999-01-01

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

  6. The statistics of sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1993-01-01

    The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

  7. Multilevel systematic sampling to estimate total fruit number for yield forecasts

    DEFF Research Database (Denmark)

    Wulfsohn, Dvora-Laio; Zamora, Felipe Aravena; Tellez, Camilla Potin

    2012-01-01

    procedure for unbiased estimation of fruit number for yield forecasts. In the Spring of 2009 we estimated the total number of fruit in several rows of each of 14 commercial fruit orchards growing apple (11 groves), kiwifruit (two groves), and table grapes (one grove) in central Chile. Survey times were 10...

  8. Nitrogen fertilization of Cabernet Sauvignon grapevines: yield, total nitrogen content in the leaves and must composition

    Directory of Open Access Journals (Sweden)

    Felipe Lorensini

    2015-08-01

    Full Text Available Grapevines grown on sandy soils are subjected to the application of supplemental nitrogen (N; however, there is little information available regarding the impact of these applications on yield, plant nutritional state and must composition. The aim of this study was to evaluate the yield, nutritional state and must composition of grapevines subjected to N fertilization. Cabernet Sauvignon grapevines were subjected to annual applications of 0, 10, 15, 20, 40, 80 and 120 kg N ha-1 in 2008, 2009 and 2010. During the 2008/09, 2009/10 and 2010/11 harvest seasons, leaves were collected during full flowering and when the berries changed color, and the total N content was analyzed. The grape yield and the enological characteristics of the must were evaluated. The response to applied N was low, and the highest Cabernet Sauvignon grape yield was obtained in response to an application of 20 kg N ha-1 year-1. The application of N increased the nutrient content in the leaf collected at full flowering, but it had little effect on the total nutrient content in the must, and it did not affect the enological characteristics of the must, such as soluble solids, pH, total acidity, malic acid and tartaric acid.

  9. Top layer's thickness dependence on total electron-yield X-ray standing-wave

    International Nuclear Information System (INIS)

    Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

    2005-01-01

    A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

  10. Total Suspended Load and Sediment Yield of Kayan River, Bulungan District, East Kalimantan

    Directory of Open Access Journals (Sweden)

    Suprapto Dibyosaputro

    2016-12-01

    Full Text Available This research was carried out the the drainage system of Kayan river, Bulungan District, East Kalimantan. The purpose of the research were to study the physical conditions of the Kayan catchment area, calculate the suspended sediment load, and to define the total sediment yield of Kayan River. Observation method were used in this research both of direct field observation as well as laboratory observation. Data acquired in this study were include of climatic data, geology, geomorphology, soil and land cover data. Besides also rain-fall data, temperature, river discharge and suspended sediment load. The total sediment yield were calculated by mean of mathematical and statistical analysis especially of linier regression analysis. The result of the research show that total the sediment yield of Kayan River with drainage area of 6,329.452 km² is about 236,921.25 m³/km²/year. The interesting result of the statistical analysis was that the existing negative correlation between river discharge and suspended sediment load. It is the effect of the location of discharge and suspended measurement. This condition caused by sea tide effect on river discharge at the apex delta. During high tide water river trend rising up on discharge but not on suspended sediment load. Instead, also existing setting down processes takes places of the suspended sediment load into the river bottom upper stream and the apex.

  11. Sputtered catalysts

    International Nuclear Information System (INIS)

    Tyerman, W.J.R.

    1978-01-01

    A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

  12. Sputtering yields of YBa2Cu3O7 and Bi2Sr2Ca2Cu3O10 by 100 keV Ar+ impact at normal incidence

    International Nuclear Information System (INIS)

    Matsunami, N.

    1998-01-01

    The thickness change of YBa 2 Cu 3 O 7-δ (YBCO) and Bi 2 Sr 2 Ca 2 Cu 3 O 10-δ (Bi-2223) films by 100 keV Ar + impact at normal incidence has been measured using 1.8 MeV He Rutherford backscattering method. The sputtering yields of YBCO and Bi-2223 films are determined as 2.5 and 1.7 atoms per ion, respectively. A considerable segregation of Y is observed for YBCO by ion impact. Comparing the experimental sputtering yields with those of a computer simulation, the effective surface binding energies for the films of non-superconducting phase are obtained as 3.0 and 4.5 eV for YBCO and Bi-2223, respectively. These surface binding energies are compared with those of thermodynamics. (orig.)

  13. Computer simulation and data compilation of sputtering yield by hydrogen isotopes ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}) and helium ({sup 4}He{sup +}) ion impact from monatomic solids at normal incidence

    Energy Technology Data Exchange (ETDEWEB)

    Yamamura, Yasunori; Sakaoka, Kazuho; Tawara, Hiro

    1995-10-01

    The ion-induced sputtering yields from monatomic solids at normal incidence are presented graphically for light-ion ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}, {sup 4}He{sup +}) bombardment on various target materials as a function of the incident ion energy. To supplement the experimental data, the sputtering yields are calculated by the Monte Carlo simulation code ACAT for all possible light ion-target combinations. Each graph shows the available experimental and ACAT data points, together with the sputtering yield calculated by the Yamamura and Tawara empirical formula. (author).

  14. Sputtering of solid deuterium by He-ions

    DEFF Research Database (Denmark)

    Schou, Jørgen; Stenum, B.; Pedrys, R.

    2001-01-01

    Sputtering of solid deuterium by bombardment of 3He+ and 4He+ ions was studied. Some features are similar to hydrogen ion bombardment of solid deuterium, but for the He-ions a significant contribution of elastic processes to the total yield can be identified. The thin-film enhancement is more pro...... pronounced than that for hydrogen projectiles in the same energy range....

  15. Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

    International Nuclear Information System (INIS)

    Abdrashitov, S.V.; Bogdanov, O.V.; Dabagov, S.B.; Pivovarov, Yu.L.; Tukhfatullin, T.A.

    2013-01-01

    Orientation dependences of channeling radiation total yield from relativistic 155–855 MeV electrons at both 〈1 0 0〉 axial and (1 0 0) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam

  16. Proton sputtering. Final report

    International Nuclear Information System (INIS)

    Finfgeld, C.R.

    1975-01-01

    This research provides sputtering yields as a function of energy for H + and D + on several representative pure metallic elements, in the absence of surface contaminants. The experimental technique and apparatus are described. Data are given for Au, Co, Ta, W, and Mo

  17. Revisiting the total ion yield x-ray absorption spectra of liquid water microjets

    International Nuclear Information System (INIS)

    Saykally, Richard J; Cappa, Chris D.; Smith, Jared D.; Wilson, Kevin R.; Saykally, Richard J.

    2008-01-01

    Measurements of the total ion yield (TIY) x-ray absorption spectrum (XAS) of liquid water by Wilson et al. (2002 J. Phys.: Condens. Matter 14 L221 and 2001 J. Phys. Chem. B 105 3346) have been revisited in light of new experimental and theoretical efforts by our group. Previously, the TIY spectrum was interpreted as a distinct measure of the electronic structure of the liquid water surface. However, our new results indicate that the previously obtained spectrum may have suffered from as yet unidentified experimental artifacts. Although computational results indicate that the liquid water surface should exhibit a TIY-XAS that is fundamentally distinguishable from the bulk liquid XAS, the new experimental results suggest that the observable TIY-XAS is actually nearly identical in appearance to the total electron yield (TEY-)XAS, which is a bulk probe. This surprising similarity between the observed TIY-XAS and TEY-XAS likely results from large contributions from x-ray induced electron stimulated desorption of ions, and does not necessarily indicate that the electronic structure of the bulk liquid and liquid surface are identical

  18. Physics of ion sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1984-04-01

    The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures

  19. Classical dynamics simulation of the fluence dependence of sputtering properties for the 2 keV Cu → Cu(1 0 0) system

    International Nuclear Information System (INIS)

    Karolewski, M.A.

    2004-01-01

    Classical dynamics simulations of sputtering have been carried out for 2 keV Cu projectiles incident on a Cu(1 0 0) crystallite target, in order to study the effects of projectile fluence on sputtering properties. Five projectiles are delivered into a 400 Ang 2 region of a Cu crystallite target at 5 ps intervals, giving a maximum fluence of 1.25 x 10 14 cm -2 in the primary impact zone. The altitudinal angle (φ) of the projectiles was 30 deg. (measured with respect to the surface), and the azimuthal (phi) direction of incidence was parallel to the surface atomic rows. The sputter yield is found not to depend sensitively on fluence. Over the fluence range investigated, the predicted standard deviation of the sputter yield is only 5% of the mean value of 11.7. Resputtered projectiles contribute less than 2% of the total sputter yield. With increasing fluence, the angular distribution of sputtered atoms tends to become less anisotropic. For example, the intensity modulations in the azimuthal angular distribution are reduced. This effect is due to the increasing contribution from atoms that are sputtered from defective structural environments. However, sputtered atom energy distributions and emission statistics show little dependence on fluence. The information depth of sputtered atoms increases rapidly with fluence, from 0.11 monolayers (ML) initially, to 1.2 ML after sputtering 0.25 ML from the primary impact zone

  20. Total yield and escape depth of electrons from heavy ion solid interactions

    International Nuclear Information System (INIS)

    Frischkorn, H.J.; Burkhard, M.; Groenveld, K.O.; Hofmann, D.; Koschar, P.; Latz, R.; Schader, J.

    1983-01-01

    At high projectile energies ( aboutMeV/U) several mechanisms for electron production are discussed as e.g. direct ionization collisions, recoil particle cascades, collective electron emission. Results are presented of total electron yield (#betta#) measurements over a wide projectile energy E /SUB p/ range (40 keV/U< E /SUB p/ /M <12 MeV/U) and a wide projectile Z /SUB p/ range (1<2 /SUB p-/ <92) of both monoionic and molecular projectiles and of different target thicknesses. From the target thickness dependence of #betta# the mean free path lambda of electrons in carbon can be calculated. The data are discussed in the frame of current theories. Significant deviations from calculated values and predicted dependencies are found, in particular for projectile velocities v /SUB p/ close to the Fermi velocity v /SUB F/ of target electrons and for molecular projectile ions

  1. Calculation of the total electron excitation cross section in the Born approximation using Slater wave functions for the Li (2s yields 2p), Li (2s yields 3p), Na (3s yields 4p), Mg (3p yields 4s), Ca (4s yields 4p) and K (4s yields 4p) excitations. M.S. Thesis

    Science.gov (United States)

    Simsic, P. L.

    1974-01-01

    Excitation of neutral atoms by inelastic scattering of incident electrons in gaseous nebulae were investigated using Slater Wave functions to describe the initial and final states of the atom. Total cross sections using the Born Approximation are calculated for: Li(2s yields 2p), Na(3s yields 4p), k(4s yields 4p). The intensity of emitted radiation from gaseous nebulae is also calculated, and Maxwell distribution is employed to average the kinetic energy of electrons.

  2. Magnetospheric ion sputtering and water ice grain size at Europa

    Science.gov (United States)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  3. Effect of water stress on total biomass, tuber yield, harvest index and water use efficiency in Jerusalem artichoke

    Science.gov (United States)

    The objectives of this study were to determine the effect of drought on tuber yield, total biomass, harvest index, water use efficiency of tuber yield (WUEt) and water use efficiency of biomass (WUEb), and to evaluate the differential responses of Jerusalem artichoke (JA) varieties under drought str...

  4. Association of total-mixed-ration chemical composition with milk, fat, and protein yield lactation curves at the individual level

    NARCIS (Netherlands)

    Caccamo, M.; Veerkamp, R.F.; Licitra, G.; Petriglieri, R.; Terra, La F.; Pozzebon, A.; Ferguson, J.D.

    2012-01-01

    The objective of this study was to examine the effect of the chemical composition of a total mixed ration (TMR) tested quarterly from March 2006 through December 2008 for milk, fat, and protein yield curves for 27 herds in Ragusa, Sicily. Before this study, standard yield curves were generated on

  5. Enhancement of total lipid yield by nitrogen, carbon, and iron supplementation in isolated microalgae.

    Science.gov (United States)

    Sivaramakrishnan, Ramachandran; Incharoensakdi, Aran

    2017-08-01

    The biochemical contents and biodiesel production ability of three microalgal strains grown under different sodium nitrate, sodium carbonate, and ferric ammonium citrate (iron) levels were investigated. The highest biomass and lipid contents were found in Scenedesmus sp., Chlorella sp., and Chlamydomonas sp. when grown in normal BG-11 containing sodium carbonate concentration at 0.03 g · L -1 , and in normal BG-11 containing iron concentration (IC) at 0.009 or 0.012 g · L -1 . Increasing the sodium nitrate level increased the biomass content, but decreased the lipid content in all three microalgae. Among the three microalgae, Scenedesmus sp. showed the highest total lipid yield of 0.69 g · L -1 under the IC of 0.012 g · L -1 . Palmitic and oleic acids were the major fatty acids of Scenedesmus sp. and Chlamydomonas sp. lipids. On the other hand, Chlorella sp. lipids were rich in palmitic, oleic, and linolenic acids, and henceforth contributing to poor biodiesel properties below the standard limits. The three isolated strains had a potential for biodiesel production. Nevertheless, Scenedesmus sp. from stone quarry pond water was the most suitable source for biodiesel production with tolerance toward the high concentration of sodium carbonate without the loss of its biodiesel properties. © 2017 Phycological Society of America.

  6. Impact of monsoon rainfall on the total foodgrain yield over India

    Indian Academy of Sciences (India)

    Agriculture Cooperation (DES 2010) which is a mirror of progress in the agriculture sector at all-India level as well as across the states. The foodgrain yield exhibits an increasing trend since early 70's, mainly due to expanded use of high- yielding varieties of crops, changing cropping pat- terns and agricultural practices as ...

  7. Airborne observations of total RONO2: new constraints on the yield and lifetime of isoprene nitrates

    Directory of Open Access Journals (Sweden)

    W. H. Brune

    2009-02-01

    Full Text Available Formation of isoprene nitrates (INs is an important free radical chain termination step ending production of ozone and possibly affecting formation of secondary organic aerosol. Isoprene nitrates also represent a potentially large, unmeasured contribution to OH reactivity and are a major pathway for the removal of nitrogen oxides from the atmosphere. Current assessments indicate that formation rates of isoprene nitrates are uncertain to a factor of 2–3 and the subsequent fate of isoprene nitrates remains largely unconstrained by laboratory, field or modeling studies. Measurements of total alkyl and multifunctional nitrates (ΣANs, NO2, total peroxy nitrates (ΣPNs, HNO3, CH2O, isoprene and other VOC were obtained from the NASA DC-8 aircraft during summer 2004 over the continental US during the INTEX-NA campaign. These observations represent the first characterization of ΣANs over a wide range of land surface types and in the lower free troposphere. ΣANs were a significant, 12–20%, fraction of NOy throughout the experimental domain and ΣANs were more abundant when isoprene was high. We use the observed hydrocarbon species to calculate the relative contributions of ΣAN precursors to their production. These calculations indicate that isoprene represents at least three quarters of the ΣAN source in the summertime continental boundary layer of the US. An observed correlation between ΣANs and CH2O is used to place constraints on nitrate yields from isoprene oxidation, atmospheric lifetimes of the resulting nitrates and recycling efficiencies of nitrates during subsequent oxidation. We find reasonable fits to the data using sets of production rates, lifetimes and recycling efficiencies of INs as follows (4.4%, 16 h, 97%, (8%, 2.5 h, 79% and (12%, 95 min, 67%. The analysis indicates that the lifetime of ΣANs as a pool of compounds is considerably longer than the lifetime of the individual isoprene nitrates to reaction with OH, implying that

  8. Electronic sputtering

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1989-01-01

    Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

  9. Formation and stability of sputtered clusters

    International Nuclear Information System (INIS)

    Andersen, H.H.

    1989-01-01

    Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

  10. Laser sputtering. Pt. 1

    International Nuclear Information System (INIS)

    Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

    1985-01-01

    Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

  11. Dependence of sputtering erosion on fuel-pellet characteristics

    International Nuclear Information System (INIS)

    Bohachevsky, I.O.; Hafer, J.F.

    1977-11-01

    Conceptual designs of fusion reactors operating on the principle of inertial confinement require that the dependence of cavity-wall erosion on fuel-pellet energy yield, its mass, and representative atomic number be known. A simple approximate model of sputtering erosion is presented and explicit formulas are derived that express the total amount of eroded wall material in terms of the above three parameters

  12. The Effect of Tallow As Lipase Inducer on Total of Aspergillus Niger, Lipolitic Activity and Lipase Yield

    Directory of Open Access Journals (Sweden)

    Manik Eirry Sawitri

    2012-02-01

    Full Text Available The objectives of this research was to determined of tallow addition with different concentration as lipase Aspergillus niger inducer to total of A. niger, lipolitic activity and lipase yield. The result showed that tallow addition as inducer in the lipase A. niger production gave no significant effect on total of A. niger (5.3 x 107 – 1.7 x 108 cfu/gram in the medium. Tallow addition gave a highly significant effect on lipolytic activity and yield of lipase A. niger. Lipolytic activity ranged between 32.0354 – 53.1197 U/mg protein, while the yield of lipase was 6.6418–7.8941 µg/ml. The conclusion of this research was the addition of tallow for 8% as the lipase inducer of A. niger on lipase production was  more effective to obtain the optimal result. Keywords : Tallow, lipase, inducer, Aspergillus niger

  13. Time-dependent angular distribution of sputtered particles from amorphous targets

    International Nuclear Information System (INIS)

    Yamamura, Yasunori

    1990-01-01

    Using the time-evolution computer simulation code DYACAT, the time-dependent behavior of sputtering phenomena has been investigated. The DYACAT program is based on the binary collision approximation, and the cascade development in solids is followed time-evolutionally. The total sputtering yield, the angular distribution and the energy distribution of sputtered atoms are calculated as a function of time for 1 keV Ar→Cu, where the angle of incidence is the inverse surface normal. It is found that the angular distribution of the prompt collisional phase of the sputtering process shows an under-cosine and that the corresponding energy spectrum has a peak near 10 eV. The slow collisional phase of 1 keV Ar→Cu will start after 3x10 -14 s, and its angular distribution shows an over-cosine distribution. (orig.)

  14. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

    1979-01-01

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

  15. Nitrate radical oxidation of γ-terpinene: hydroxy nitrate, total organic nitrate, and secondary organic aerosol yields

    Science.gov (United States)

    Slade, Jonathan H.; de Perre, Chloé; Lee, Linda; Shepson, Paul B.

    2017-07-01

    Polyolefinic monoterpenes represent a potentially important but understudied source of organic nitrates (ONs) and secondary organic aerosol (SOA) following oxidation due to their high reactivity and propensity for multi-stage chemistry. Recent modeling work suggests that the oxidation of polyolefinic γ-terpinene can be the dominant source of nighttime ON in a mixed forest environment. However, the ON yields, aerosol partitioning behavior, and SOA yields from γ-terpinene oxidation by the nitrate radical (NO3), an important nighttime oxidant, have not been determined experimentally. In this work, we present a comprehensive experimental investigation of the total (gas + particle) ON, hydroxy nitrate, and SOA yields following γ-terpinene oxidation by NO3. Under dry conditions, the hydroxy nitrate yield = 4(+1/-3) %, total ON yield = 14(+3/-2) %, and SOA yield ≤ 10 % under atmospherically relevant particle mass loadings, similar to those for α-pinene + NO3. Using a chemical box model, we show that the measured concentrations of NO2 and γ-terpinene hydroxy nitrates can be reliably simulated from α-pinene + NO3 chemistry. This suggests that NO3 addition to either of the two internal double bonds of γ-terpinene primarily decomposes forming a relatively volatile keto-aldehyde, reconciling the small SOA yield observed here and for other internal olefinic terpenes. Based on aerosol partitioning analysis and identification of speciated particle-phase ON applying high-resolution liquid chromatography-mass spectrometry, we estimate that a significant fraction of the particle-phase ON has the hydroxy nitrate moiety. This work greatly contributes to our understanding of ON and SOA formation from polyolefin monoterpene oxidation, which could be important in the northern continental US and the Midwest, where polyolefinic monoterpene emissions are greatest.

  16. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    International Nuclear Information System (INIS)

    Li Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

  17. Ensiling and hydrothermal pretreatment of grass: Consequences for enzymatic biomass conversion and total monosaccharide yields

    DEFF Research Database (Denmark)

    Ambye-Jensen, Morten; Johansen, Katja Salomon; Didion, Thomas

    2014-01-01

    Ensiling may act as a pretreatment of fresh grass biomass and increase the enzymatic conversion of structural carbohydrates to fermentable sugars. However, ensiling does not provide sufficient severity to be a standalone pretreatment method. Here, ensiling of grass is combined with hydrothermal...... treatment (HTT) with the aim of improving the enzymatic biomass convertibility and decrease the required temperature of the HTT. Results: Grass silage (Festulolium Hykor) was hydrothermally treated at temperatures of 170, 180, and 190°C for 10 minutes. Relative to HTT treated dry grass, ensiling increased...... convertibility). The effect of ensiling of grass prior to HTT improved the enzymatic conversion of cellulose for HTT at 170 and 180°C, but the increased glucose release did not make up for the loss of water soluble carbohydrates (WSC) during ensiling. Overall, sugar yields (C6 + C5) were similar for HTT of grass...

  18. Sputtering of copper (110) by 3 keV argon - a computer simulation

    International Nuclear Information System (INIS)

    Weygandt, A.; King, B.V.

    1998-01-01

    The aims of this study are to investigate the angular distribution of atoms sputtered from {110} surface of a copper monocrystal due to normal incidence 3 keV Argon impact as well as to examine the change of sputtering behaviour with temperature from 0 K to 670 K. We have used the Molecular Dynamics (MD) code SPUT93 to study sputtering. In MD codes Newton's equations of motion are solved simultanously for all atoms of a crystal. The forces acting on a particle are found from derivatives of a model potential function. For the present study an embedded atom method (EAM) potential was used. It was found that the total sputter yield for the warm crystal (670K) of 3.13 ± 0.03 is in agreement with experimental results and indicate that the temperature of the target has generally no direct influence on the sputtering yield. It was estimated that heating the crystal only causes more uniform emission. It was also found that ejection due to the collisions between atoms in the top layers along closed-packed directions become important. The mechanisms which determine the angular distributions of atoms sputtered from a copper crystal were identified

  19. Effect of temperature, time, and milling process on yield, flavonoid, and total phenolic content of Zingiber officinale water extract

    Science.gov (United States)

    Andriyani, R.; Kosasih, W.; Ningrum, D. R.; Pudjiraharti, S.

    2017-03-01

    Several parameters such as temperature, time of extraction, and size of simplicia play significant role in medicinal herb extraction. This study aimed to investigate the effect of those parameters on yield extract, flavonoid, and total phenolic content in water extract of Zingiber officinale. The temperatures used were 50, 70 and 90°C and the extraction times were 30, 60 and 90 min. Z. officinale in the form of powder and chips were used to study the effect of milling treatment. The correlation among those variables was analysed using ANOVA two-way factors without replication. The result showed that time and temperature did not influence the yield of extract of Powder simplicia. However, time of extraction influenced the extract of simplicia treated without milling process. On the other hand, flavonoid and total phenolic content were not influenced by temperature, time, and milling treatment.

  20. Sputtering on cobalt with noble gas ions

    International Nuclear Information System (INIS)

    Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

    1983-01-01

    Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

  1. Administrative Databases Can Yield False Conclusions-An Example of Obesity in Total Joint Arthroplasty.

    Science.gov (United States)

    George, Jaiben; Newman, Jared M; Ramanathan, Deepak; Klika, Alison K; Higuera, Carlos A; Barsoum, Wael K

    2017-09-01

    Research using large administrative databases has substantially increased in recent years. Accuracy with which comorbidities are represented in these databases has been questioned. The purpose of this study was to evaluate the extent of errors in obesity coding and its impact on arthroplasty research. Eighteen thousand thirty primary total knee arthroplasties (TKAs) and 10,475 total hip arthroplasties (THAs) performed at a single healthcare system from 2004-2014 were included. Patients were classified as obese or nonobese using 2 methods: (1) body mass index (BMI) ≥30 kg/m 2 and (2) international classification of disease, 9th edition codes. Length of stay, operative time, and 90-day complications were collected. Effect of obesity on various outcomes was analyzed separately for both BMI- and coding-based obesity. From 2004 to 2014, the prevalence of BMI-based obesity increased from 54% to 63% and 40% to 45% in TKA and THA, respectively. The prevalence of coding-based obesity increased from 15% to 28% and 8% to 17% in TKA and THA, respectively. Coding overestimated the growth of obesity in TKA and THA by 5.6 and 8.4 times, respectively. When obesity was defined by coding, obesity was falsely shown to be a significant risk factor for deep vein thrombosis (TKA), pulmonary embolism (THA), and longer hospital stay (TKA and THA). The growth in obesity observed in administrative databases may be an artifact because of improvements in coding over the years. Obesity defined by coding can overestimate the actual effect of obesity on complications after arthroplasty. Therefore, studies using large databases should be interpreted with caution, especially when variables prone to coding errors are involved. Copyright © 2017 Elsevier Inc. All rights reserved.

  2. Effects of seeding date and seeding rate on yield, proximate composition and total tannins content of two Kabuli chickpea cultivars

    Directory of Open Access Journals (Sweden)

    Roberto Ruggeri

    2017-09-01

    Full Text Available Experiments were conducted in open field to assess the effect of seeding season and density on the yield, the chemical composition and the accumulation of total tannins in grains of two chickpea (Cicer arietinum L. cultivars (Pascià and Sultano. Environmental conditions and genetic factors considerably affected grain yield, nutrient and total tannins content of chickpea seeds, giving a considerable range in its qualitative characteristics. Results confirmed cultivar selection as a central factor when a late autumn-early winter sowing is performed. In effect, a more marked resistance to Ascochyta blight (AB of Sultano, allowed better agronomic performances when favourable-to-AB climatic conditions occur. Winter sowing appeared to be the best choice in the Mediterranean environment when cultivating to maximise the grain yield (+19%. Spring sowing improved crude protein (+10% and crude fibre (+8% content, whereas it did not significantly affect the accumulation of anti-nutrients compounds such as total tannins. The most appropriate seeding rate was 70 seeds m–2, considering that plant density had relatively little effect on the parameters studied.

  3. Isotope puzzle in sputtering

    International Nuclear Information System (INIS)

    Zheng Liping

    1998-01-01

    Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

  4. Effect of Foliar Application of Micro Nutrients on Physiological Growth Indices and Total Dry Matter Yield of Forage Corn

    Directory of Open Access Journals (Sweden)

    A. Soleymani

    2012-04-01

    Full Text Available In order to evaluate the effect of foliar application of micro nutrients on physiological growth indices and total dry matter yield of forage corn. Field experiment was conducted in 2006 at Bersian village Isfahan. A randomized complete block design with four replications was used. Plant treated with 8 foliar application treatments (Fe, Zn, Cu, Mn, Fe + Mn, Cu + Zn, Fe + Mn + Cu + Zn and control. The responses to foliar application in total dry weight, LAI and CGR appeared to differ between the treatments, but there is no significant difference in NAR between the treatments. Maximum leaf area index gained in foliar application of Fe but there is significant difference between this treatment and other treatments except foliar application of Zn and Fe + Mn. Foliar application of Fe and Fe + Mn result to maximum total dry weight, but there is no significant difference between these treatments and foliar application of Zn, Mn, Mn + Cu and Fe + Zn + Cu +Mn. Maximum and minimum NAR gained in foliar application of Mn and control treatments respectively. Maximum CGR gained in foliar application of Zn, there is significant difference between this treatment and others. Control treatment in comparison with others shows minimum value in all measured factors. The results indicate that foliar application of micro nutrients particularly Fe and Fe+Mn may be suitable to product maximum total dry matter yield under similar condition.

  5. Simulation of carbon sputtering due to molecular hydrogen impact

    International Nuclear Information System (INIS)

    Laszlo, J.

    1993-01-01

    Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

  6. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  7. The influence of landing points on the sputtering of mono-crystal solids due to cluster impacting

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi, E-mail: zsyang@ipp.ac.cn; Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn

    2017-01-15

    The mechanism of sputtering due to cluster impacting which has been widely studied is an important but unsolved problem. In present research, we discuss the effect of the landing point on the sputtering with the method of molecular dynamics. The results show that the landing points play significant roles on sputter yield when the temperature of target is low. Specific landing points can cause particular sputtering patterns which lead to different sputtering yield and moving directions of sputtered atoms. The mechanism of this phenomenon is that specific landing keeps symmetries and anisotropies of target lattice, which influence the sputtering yield.

  8. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  9. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  10. Threshold photoelectron spectroscopy and photoionization total ion yield spectroscopy of simple organic acids, aldehydes, ketones and amines

    International Nuclear Information System (INIS)

    Yencha, Andrew J; Malins, Andrew E R; Siggel-King, Michele R F; Eypper, Marie; King, George C

    2009-01-01

    We have initiated a research program to investigate the ionization behavior of some simple organic molecules containing the carboxyl group (R 2 C=O), where R could be H, OH, NH 2 , or CH 3 or other aliphatic or aromatic carbon groups, using threshold photoelectron spectroscopy and photoionization total ion yield spectroscopy. We report here on the simplest organic acid, formic acid, and two simple aldehydes: acetaldehyde and the simplest unsaturated aldehyde, 2-propenal (acrolein). The objective of this study was to characterize the valence cationic states of these molecules with vibrational structural resolution.

  11. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  12. Studies on fission with ALADIN. Precise and simultaneous measurement of fission yields, total kinetic energy and total prompt neutron multiplicity at GSI

    International Nuclear Information System (INIS)

    Martin, Julie-Fiona; Taieb, Julien; Chatillon, Audrey; Belier, Gilbert; Boutoux, Guillaume; Ebran, Adeline; Gorbinet, Thomas; Grente, Lucie; Laurent, Benoit; Pellereau, Eric; Alvarez-Pol, Hector; Ayyad, Yassid; Benlliure, Jose; Cortina Gil, Dolores; Caamano, Manuel; Fernandez Dominguez, Beatriz; Paradela, Carlos; Ramos, Diego; Rodriguez-Sanchez, Jose-Luis; Vargas, Jossitt; Audouin, Laurent; Tassan-Got, Laurent; Aumann, Thomas; Casarejos, Enrique; Farget, Fanny; Rodriguez-Tajes, Carme; Heinz, Andreas; Jurado, Beatriz; Kelic-Heil, Aleksandra; Kurz, Nikolaus; Nociforo, Chiara; Pietri, Stephane; Rossi, Dominic; Schmidt, Karl-Heinz; Simon, Haik; Voss, Bernd; Weick, Helmut

    2015-01-01

    A novel technique for fission studies, based on the inverse kinematics approach, is presented. Following pioneering work in the nineties, the SOFIA Collaboration has designed and built an experimental set-up dedicated to the simultaneous measurement of isotopic yields, total kinetic energies and total prompt neutron multiplicities, by fully identifying both fission fragments in coincidence, for the very first time. This experiment, performed at GSI, permits to study the fission of a wide variety of fissioning systems, ranging from mercury to neptunium, possibly far from the valley of stability. A first experiment, performed in 2012, has provided a large array of unprecedented data regarding the nuclear fission process. An excerpt of the results is presented. With this solid starter, further improvements of the experimental set-up are considered, which are consistent with the expected developments at the GSI facility, in order to measure more fission observables in coincidence. The completeness reached in the SOFIA data, permits to scrutinize the correlations between the interesting features of fission, offering a very detailed insight in this still unraveled mechanism. (orig.)

  13. Studies on fission with ALADIN. Precise and simultaneous measurement of fission yields, total kinetic energy and total prompt neutron multiplicity at GSI

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Julie-Fiona; Taieb, Julien; Chatillon, Audrey; Belier, Gilbert; Boutoux, Guillaume; Ebran, Adeline; Gorbinet, Thomas; Grente, Lucie; Laurent, Benoit; Pellereau, Eric [CEA DAM Bruyeres-le-Chatel, Arpajon (France); Alvarez-Pol, Hector; Ayyad, Yassid; Benlliure, Jose; Cortina Gil, Dolores; Caamano, Manuel; Fernandez Dominguez, Beatriz; Paradela, Carlos; Ramos, Diego; Rodriguez-Sanchez, Jose-Luis; Vargas, Jossitt [Universidad de Santiago de Compostela, Santiago de Compostela (Spain); Audouin, Laurent; Tassan-Got, Laurent [CNRS/IN2P3, IPNO, Orsay (France); Aumann, Thomas [Technische Universitaet Darmstadt, Darmstadt (Germany); Casarejos, Enrique [Universidad de Vigo, Vigo (Spain); Farget, Fanny; Rodriguez-Tajes, Carme [CNRS/IN2P3, GANIL, Caen (France); Heinz, Andreas [Chalmers University of Technology, Gothenburg (Sweden); Jurado, Beatriz [CNRS/IN2P3, CENBG, Gradignan (France); Kelic-Heil, Aleksandra; Kurz, Nikolaus; Nociforo, Chiara; Pietri, Stephane; Rossi, Dominic; Schmidt, Karl-Heinz; Simon, Haik; Voss, Bernd; Weick, Helmut [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany)

    2015-12-15

    A novel technique for fission studies, based on the inverse kinematics approach, is presented. Following pioneering work in the nineties, the SOFIA Collaboration has designed and built an experimental set-up dedicated to the simultaneous measurement of isotopic yields, total kinetic energies and total prompt neutron multiplicities, by fully identifying both fission fragments in coincidence, for the very first time. This experiment, performed at GSI, permits to study the fission of a wide variety of fissioning systems, ranging from mercury to neptunium, possibly far from the valley of stability. A first experiment, performed in 2012, has provided a large array of unprecedented data regarding the nuclear fission process. An excerpt of the results is presented. With this solid starter, further improvements of the experimental set-up are considered, which are consistent with the expected developments at the GSI facility, in order to measure more fission observables in coincidence. The completeness reached in the SOFIA data, permits to scrutinize the correlations between the interesting features of fission, offering a very detailed insight in this still unraveled mechanism. (orig.)

  14. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  15. Sputtering of octatetraene by 15 keV C{sub 60} projectiles: Comparison of reactive interatomic potentials

    Energy Technology Data Exchange (ETDEWEB)

    Kanski, Michal; Maciazek, Dawid; Golunski, Mikolaj; Postawa, Zbigniew, E-mail: zbigniew.postawa@uj.edu.pl

    2017-02-15

    Highlights: • Probing the effect of interatomic potentials on sputtering of an octatetraene sample. • Problems with charge calculations are observed during cluster impact for ReaxFF. • COMB3 leads to a very low sputtering yield due to abrupt energy dissipation. • AIREBO is computationally the most efficient, while ReaxFF is more accurate. - Abstract: Molecular dynamics computer simulations have been used to probe the effect of the AIREBO, ReaxFF and COMB3 interatomic potentials on sputtering of an organic sample composed of octatetraene molecules. The system is bombarded by a 15 keV C{sub 60} projectile at normal incidence. The effect of the applied force fields on the total time of simulation, the calculated sputtering yield and the angular distribution of sputtered particles is investigated and discussed. It has been found that caution should be taken when simulating particles ejection from nonhomogeneous systems that undergo significant fragmentation described by the ReaxFF. In this case, the charge state of many particles is improper due to an inadequacy of a procedure used for calculating partial charges on atoms in molecules for conditions present during sputtering. A two-step simulation procedure is proposed to minimize the effect of this deficiency. There is also a possible problem with the COMB3 potential, at least at conditions present during cluster impact, as its results are very different from AIREBO or ReaxFF.

  16. Sputtering of water ice

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

  17. Studying sulfur functional groups in Norway spruce year rings using S L-edge total electron yield spectroscopy

    International Nuclear Information System (INIS)

    Struis, Rudolf P.W.J.; Ludwig, Christian; Barrelet, Timothee; Kraehenbuehl, Urs; Rennenberg, Heinz

    2008-01-01

    Profiles of the major sulfur functional groups in mature Norway spruce wood tissue have been established for the first time. The big challenge was the development of a method suitable for sulfur speciation in samples with very low sulfur content (< 100 ppm). This became possible by synchrotron X-ray absorption spectroscopy at the sulfur L-edge in total electron yield (TEY) detection mode with thin gold-coated wood slices. Functional groups were identified using sulfur compound spectra as fingerprints. Latewood of single year rings revealed metabolic plausible sulfur forms, particularly inorganic sulfide, organic disulfide, methylthiol, and highly oxidized sulfur. Form-specific profiles with Norway spruces from three different Swiss forest sites revealed high, but hitherto little-noticed, sulfur intensities attributable to natural heartwood formation and a common, but physiologically unexpected maximum around year ring 1986 with trees from the industrialized Swiss Plateau. It is hypothesized whether it may have resulted from the huge reduction in sulfur emissions after 1980 due to Swiss policy. Comparison with total S content profiles from optical emission spectroscopy underlined the more accurate and temporally better resolved TEY data with single wood year rings and it opened novel insights into the wood cell chemistry

  18. Matted-fiber divertor tagets for sputter resistance

    International Nuclear Information System (INIS)

    Gierszewski, P.J.; Todreas, N.E.; Mikic, B.; Yang, T.F.

    1981-06-01

    Reductions in net sputtering yields can be obtained by altering the surface topography to maximize redeposition of sputtered atoms. A simple analysis is used to indicate a potential reduction by a factor of 2 to 5 for matted fiber divertor targets, relatively independent of incident, reflected and sputtered atom distributions. The fiber temperature is also shown to be acceptable, even up to 10 MW/m 2 , for reasonably combinations of materials, fiber diameter and fiber spacing

  19. Sputtering of thin benzene and polystyrene overlayers by keV Ga and C60 bombardment

    International Nuclear Information System (INIS)

    Czerwinski, B.; Delcorte, A.; Garrison, B.J.; Samson, R.; Winograd, N.; Postawa, Z.

    2006-01-01

    The mechanisms of ion-stimulated desorption of thin organic overlayers deposited on metal substrates by mono- and polyatomic projectiles are examined using molecular dynamics (MD) computer simulations. A monolayer of polystyrene tetramers (PS4) physisorbed on Ag{1 1 1} is irradiated by 15 keV Ga and C 60 projectiles at normal incidence. The results are compared with the data obtained for a benzene overlayer to investigate the differences in sputtering mechanisms of weakly and strongly bound organic molecules. The results indicate that the sputtering yield decreases with the increase of the binding energy and the average kinetic energy of parent molecules is shifted toward higher kinetic energy. Although the total sputtering yield of organic material is larger for 15 keV C 60 , the impact of this projectile leads to a significant fragmentation of ejected species. As a result, the yield of the intact molecules is comparable for C 60 and Ga projectiles. Our data indicate that chemical analysis of the very thin organic films performed by detection of sputtered neutrals will not benefit from the use of C 60 projectiles

  20. Modelling of low energy ion sputtering from oxide surfaces

    International Nuclear Information System (INIS)

    Kubart, T; Nyberg, T; Berg, S

    2010-01-01

    The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

  1. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  2. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.

    1993-01-01

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  3. Sputtering properties of tungsten 'fuzzy' surfaces

    International Nuclear Information System (INIS)

    Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

    2011-01-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

  4. Computer simulation of the self-sputtering of uranium

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1983-01-01

    The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

  5. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  6. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  7. Argonne inverted sputter source

    International Nuclear Information System (INIS)

    Yntema, J.L.; Billquist, P.J.

    1983-01-01

    The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

  8. Sensitivity of ion-induced sputtering to the radial distribution of energy transfers: A molecular dynamics study

    International Nuclear Information System (INIS)

    Mookerjee, S.; Khan, S. A.; Roy, A.; Beuve, M.; Toulemonde, M.

    2008-01-01

    Using different models for the deposition of energy on the lattice and a classical molecular dynamics approach to the subsequent transport, we evaluate how the details of the energy deposition model influence sputtering yield from a Lennard-Jones target irradiated with a MeV/u ion beam. Two energy deposition models are considered: a uniform, instantaneous deposition into a cylinder of fixed radius around the projectile ion track, used in earlier molecular dynamics and fluid dynamics simulations of sputtering yields; and an energy deposition distributed in time and space based on the formalism developed in the thermal spike model. The dependence of the sputtering yield on the total energy deposited on the target atoms is very sensitive to the energy deposition model. To clarify the origin of this strong dependence, we explore the role of the radial expansion of the electronic system prior to the transfer of its energy to the lattice. The results imply that observables such as the sputtering yield may be used as signatures of the fast electron-lattice energy transfer in the electronic energy-loss regime, and indicate the need for more experimental and theoretical investigations of these processes

  9. KRYPTON INCORPORATION IN SPUTTERED SILICON FILMS

    NARCIS (Netherlands)

    GREUTER, MJW; NIESEN, L; HAKVOORT, RA; DEROODE, J; VANVEEN, A; BERNTSEN, AJM; SLOOF, WG

    1993-01-01

    The incorporation of Kr in sputtered a-Si films has been investigated in a systematic way by varying the Kr to Si flux, yielding Kr concentrations up to 5 at %. Compositions were determined with X-ray microanalysis. A model has been applied to describe the composition of the growing film. The layers

  10. Advanced capabilities and applications of a sputter-RBS system

    International Nuclear Information System (INIS)

    Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

    1999-01-01

    In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

  11. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-01-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  12. Sputtering and mixing of supported nanoparticles

    International Nuclear Information System (INIS)

    Jiménez-Sáez, J.C.; Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J.

    2013-01-01

    Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed

  13. Sputtering of two-phase AgxCuγ alloys

    International Nuclear Information System (INIS)

    Bibic, N.; Milosavljevic, M.; Perusko, D.; Wilson, I.H.

    1992-01-01

    Elemental sputtering yields from two phase AgCu alloys were measured for 20, 40 and 50 at % Ag. Argon ion bombardment energies were in the range 35-55 keV and the ion dose was 1 x 10 19 ions cm -2 . The sputtering yield for silver was found to be considerably below what was expected by simple selective sputtering of a two component alloy. Analysis by electron probe X-ray microanalysis and scanning electron microscopy of the eroded surface indicated that surface diffusion of copper from copper rich grains and geometrical constraints in the dense cone forest on Cu/Ag eutectic regions combine to reduce the sputtering yield for silver. (author)

  14. Assessment of Total Phenolic and Flavonoid Content, Antioxidant Properties, and Yield of Aeroponically and Conventionally Grown Leafy Vegetables and Fruit Crops: A Comparative Study

    Directory of Open Access Journals (Sweden)

    Suman Chandra

    2014-01-01

    Full Text Available A comparison of the product yield, total phenolics, total flavonoids, and antioxidant properties was done in different leafy vegetables/herbs (basil, chard, parsley, and red kale and fruit crops (bell pepper, cherry tomatoes, cucumber, and squash grown in aeroponic growing systems (AG and in the field (FG. An average increase of about 19%, 8%, 65%, 21%, 53%, 35%, 7%, and 50% in the yield was recorded for basil, chard, red kale, parsley, bell pepper, cherry tomatoes, cucumber, and squash, respectively, when grown in aeroponic systems, compared to that grown in the soil. Antioxidant properties of AG and FG crops were evaluated using 2,2-diphenyl-1-picrylhydrazyl (DDPH and cellular antioxidant (CAA assays. In general, the study shows that the plants grown in the aeroponic system had a higher yield and comparable phenolics, flavonoids, and antioxidant properties as compared to those grown in the soil.

  15. Simple model of surface roughness for binary collision sputtering simulations

    Energy Technology Data Exchange (ETDEWEB)

    Lindsey, Sloan J. [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Hobler, Gerhard, E-mail: gerhard.hobler@tuwien.ac.at [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Maciążek, Dawid; Postawa, Zbigniew [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30348 Kraków (Poland)

    2017-02-15

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  16. Simple model of surface roughness for binary collision sputtering simulations

    International Nuclear Information System (INIS)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-01-01

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  17. Adoption of an unmanned helicopter for low-altitude remote sensing to estimate yield and total biomass of a rice crop

    Science.gov (United States)

    A radio-controlled unmanned helicopter-based LARS (Low-Altitude Remote Sensing) platform was used to acquire quality images of high spatial and temporal resolution, in order to estimate yield and total biomass of a rice crop (Oriza Sativa, L.). Fifteen rice field plots with five N-treatments (0, 33,...

  18. Sputtering and inelastic processes

    International Nuclear Information System (INIS)

    Baranov, I.A.; Tsepelevic, S.O.

    1987-01-01

    Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

  19. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  20. Low-damage high-throughput grazing-angle sputter deposition on graphene

    International Nuclear Information System (INIS)

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-01-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

  1. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Science.gov (United States)

    Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

    2013-07-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  2. Contributions of solar-wind induced potential sputtering to the lunar surface erosion rate and it's exosphere

    Science.gov (United States)

    Alnussirat, S. T.; Barghouty, A. F.; Edmunson, J. E.; Sabra, M. S.; Rickman, D. L.

    2018-04-01

    Sputtering of lunar regolith by solar-wind protons and heavy ions with kinetic energies of about 1 keV/amu is an important erosive process that affects the lunar surface and exosphere. It plays an important role in changing the chemical composition and thickness of the surface layer, and in introducing material into the exosphere. Kinetic sputtering is well modeled and understood, but understanding of mechanisms of potential sputtering has lagged behind. In this study we differentiate the contributions of potential sputtering from the standard (kinetic) sputtering in changing the chemical composition and erosion rate of the lunar surface. Also we study the contribution of potential sputtering in developing the lunar exosphere. Our results show that potential sputtering enhances the total characteristic sputtering erosion rate by about 44%, and reduces sputtering time scales by the same amount. Potential sputtering also introduces more material into the lunar exosphere.

  3. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Z.L.

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  4. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  5. Evaluating the impact of extraction and cleanup parameters on the yield of total petroleum hydrocarbons in soil

    Energy Technology Data Exchange (ETDEWEB)

    Saari, Eija; Peraemaeki, Paavo; Jalonen, Jorma [University of Oulu, Department of Chemistry (Finland)

    2008-11-15

    Interlaboratory comparisons for the analysis of mineral oil in polluted soil using the GC-FID method indicate that extraction and cleanup conditions have significant effects on the analytical results. In this investigation a ruggedness test was performed on the extraction and cleanup method for the determination of total petroleum hydrocarbons in soil. A two-level Plackett-Burman design was utilized to study the effect of 11 different method parameters on the extraction recovery of total petroleum hydrocarbons (TPH) in soil. Both qualitative and quantitative factors were investigated. The results indicate that total petroleum hydrocarbons can be relatively reliably monitored through strict implementation of the ISO and CEN draft standards. However, variation in certain method parameters readily affects the validity of the results. The most critical factors affecting TPH recovery were the solvent and co-solvent used for extraction, the extraction time, adsorbent and its weight and sample TPH concentration. Because adaptation of the draft standards especially with respect to these factors easily leads to TPH recoveries higher than 200% or lower than 70%, the validity of the adapted method should always be verified. A proper estimate of the expanded uncertainty should also be appended to TPH results, because only then can the reliability of the results be guaranteed and further justification is gained to support the end-use of the data. This also supports the credibility of the analytical services and prevents the data end-users from drawing misleading conclusions concerning the environmental risks and potential remediation requirements. (orig.)

  6. Interrelationships among seed yield, total protein and amino acid composition of ten quinoa (Chenopodium quinoa) cultivars from two different agroecological regions.

    Science.gov (United States)

    Gonzalez, Juan A; Konishi, Yotaro; Bruno, Marcela; Valoy, Mariana; Prado, Fernando E

    2012-04-01

    Quinoa is a good source of protein and can be used as a nutritional ingredient in food products. This study analyses how much growing region and/or seasonal climate might affect grain yield and nutritional quality of quinoa seeds. Seeds of ten quinoa cultivars from the Andean highlands (Bolivia/Argentina site) and Argentinean Northwest (Encalilla site) were analysed for seed yield, protein content and amino acid composition. Grain yields of five cultivars growing at Encalilla were higher, and four were lower, compared with data from the Bolivia/Argentina site. Protein contents ranged from 91.5 to 155.3 and from 96.2 to 154.6 g kg(-1) dry mass for Encalilla and Bolivia/Argentina seeds respectively, while essential amino acid concentrations ranged from 179.9 to 357.2 and from 233.7 to 374.5 g kg(-1) protein respectively. Significant positive correlations were found between the content of essential amino acids and protein percentage. It appears that there are clear variations in seed yield, total protein content and amino acid composition among cultivars from the two sites. Essential amino acid composition was more affected than grain yield and protein level. The study revealed that both environmental and climatic factors influence the nutritional composition of quinoa cultivars growing in different agroecological regions. Copyright © 2011 Society of Chemical Industry.

  7. Effect of humic acid on the growth, yield, nutrient composition, photosynthetic pigment and total sugar contents of peas (pisum sativum l)

    International Nuclear Information System (INIS)

    Khan, A.; Khan, M.Z.; Hussain, F.; Akhtar, M.E.; Gurmani, A.R.; Khan, S.

    2013-01-01

    Summary: A pot experiment was conducted to evaluate the effects of humic acid (HA) applied as soil and foliar at 15, 30 and 45 ppm on the growth, biochemical content, nutrient concentrations and yield of peas. Soil as well as foliar application of HA increased the plant growth and grain yield of peas; however magnitude of increase was higher in soil application than foliar. Highest plant growth and grain yield was achieved with soil application of 15 ppm HA followed by 30 ppm and foliar application of 45 ppm HA respectively. Percentage increase in dry grain yield due to 15 ppm was 37%, with 30 ppm was 29% and foliar application of 45 ppm was 25%. Nutrient concentrations (P, K, Fe, Zn, Mn and Cu) were increased with soil and foliar application of HA. The concentrations of nutrients were relatively higher in shelf than grain. Maximum concentration of P, K and Fe was obtained with the soil application of HA at 15 ppm. Humic acid applied at 15, 30 as soil as well as foliar application at 45 ppm significantly increased chlorophyll, carotenoid and total sugar content. Our results indicate that soil application of HA at 15 and 30 ppm, while foliar application at 45 ppm can increase growth, nutrients concentration, chlorophyll content and yield of Peas in calcareous soil conditions. (author)

  8. Yield of Prompt Gamma Radiation in Slow-Neutron Induced Fission of 235U as a Function of the Total Fragment Kinetic Energy

    Energy Technology Data Exchange (ETDEWEB)

    Albinsson, H [Chalmers Univ. of Technology, Goeteborg (SE)

    1971-07-01

    Fission gamma radiation yields as functions of the total fragment kinetic energy were obtained for 235U thermal-neutron induced fission. The fragments were detected with silicon surface-barrier detectors and the gamma radiation with a Nal(Tl) scintillator. In some of the measurements mass selection was used so that the gamma radiation could also be measured as a function of fragment mass. Time discrimination between the fission gammas and the prompt neutrons released in the fission process was employed to reduce the background. The gamma radiation emitted during different time intervals after the fission event was studied with the help of a collimator, the position of which was changed along the path of the fission fragments. Fission-neutron and gamma-ray data of previous experiments were used for comparisons of the yields, and estimates were made of the variation of the prompt gamma-ray energy with the total fragment kinetic energy

  9. Dependence of sputtering coefficient on ion dose

    International Nuclear Information System (INIS)

    Colligon, J.S.; Patel, M.H.

    1977-01-01

    The sputtering coefficient of polycrystalline gold bombarded by 10-40 keV Ar + ions had been measured as a function of total ion dose and shown to exhibit oscillations in magnitude between 30 and 100%. Possible experimental errors which would give rise to such an oscillation have been considered, but it is apparent that these factors are unable to explain the measurements. It is proposed that a change in the Sublimation Energy associated with either bulk damage or formation of surface topographical features arising during ion bombardment may be responsible for the observed variations in sputtering coefficient. (author)

  10. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  11. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2008-01-01

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

  12. Experimental and analytical study of the sputtering phenomena

    International Nuclear Information System (INIS)

    Howard, P.A.

    1976-03-01

    One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

  13. Krypton-85 storage in sputter-deposited amorphous metals

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Lytle, J.M.; Gordon, N.R.; Knoll, R.W.

    1982-06-01

    After comparing options for storing radioactive krypton gas, the United States Department of Energy selected ion implantation of the gas into a sputter-deposited metal matrix as the reference process. This technique is being developed with pilot-scale testing and further characterization of the deposited product. The process involves implanting krypton atoms into a growing deposit during the sputtering process. An amorphous metal deposit of nominal composition Ni 0 81 La 0 09 Kr 0 10 has been selected for further studies because of the high krypton loading, high sputtering yield, relatively low cost of the metallic components, resistance to corrosion, and stability of the product. The krypton release from this amorphous metal is described as an activated diffusion process which increases linearly with the square root of time. Studies of krypton release rate as a function of temperature were completed and an activation energy for the diffusion of 70 kcal/mole obtained. From these data, we estimated that the krypton release during the first ten years would be 0.5% for a maximum temperature of 350 0 C. The actual release of the krypton during storage was projected to be lower by a factor of 10 7 with the maximum temperature only 220 0 C. Thermal analysis studies show two energy releases occurring with krypton-containing alloys: one associated with recrystallization of the amorphous alloy and a second associated with krypton release. The total energy release between 100 and 800 0 C was less than 50 cal/g. Estimates are given for the cost of operation of the ion implantation process for solidification of the krypton-85 from a 2000-tonne heavy metal/year reprocessing plant. The present value costs, in 1981 dollars including capital and operating costs and assuming a 30-year life, are about $26M for the lifetime of the plant. Annual energy consumption of the process was estimated to be 3.9 M kWh/year

  14. Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)

    International Nuclear Information System (INIS)

    Burnett, J.W.; Biersack, J.P.; Gruen, D.M.; Joergensen, B.; Krauss, A.R.; Pellin, M.J.; Schweitzer, E.L.; Yates, J.T. Jr.; Young, C.E.

    1987-01-01

    The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar + . The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transport of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab

  15. Impact-energy dependence of the angular distribution of gold sputtered from a (111) crystal at 100 and 300 K

    International Nuclear Information System (INIS)

    Szymczak, W.; Wittmaack, K.

    1982-01-01

    The angular distribution of gold sputtered from a (111) crystal has been investigated in the (1anti 10) plane. The sample was bombarded at 100 and 300 K by normally incident (mass-analysed) Ne and Xe ions at energies between 0.2 and 30 keV. The sputtered material was collected on hemicylindrical aluminium foils. Absolute differential sputtering yields were determined by medium energy He backscattering. The partial yield into the [001] spot, ΔY 001 , determined by angular intergration, exhibits an energy dependence distinctly different from the random yield. Neither assisted focusons nor the directional ejection mechanism suggested by Lehmann and Sigmund seem to play an important role. Instead ejection involving projectile scattering in the top two monolayers appears to be the dominant mechanism for [001] spot production. This mechanism may also account for an energy-dependent fraction of ΔY 110 . Moreover, spot shape analysis suggests a sizeable focuson contribution to the [110] spot which may account for up to 30% of the total backsputtering yield under Ne impact. The [110] spot width decreases with decreasing temperature and increasing ion energy. Minimum spot widths as low as 11 0 (fwhm) have been observed at 100 K. (orig.)

  16. Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

    International Nuclear Information System (INIS)

    Meyer, Fred W.; Harris, Peter R.; Taylor, C.N.; Meyer, Harry M. III; Barghouty, N.; Adams, J. Jr.

    2011-01-01

    We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have higher physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.

  17. Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films

    International Nuclear Information System (INIS)

    Shen, Y.G.

    2003-01-01

    A combined investigation of mechanical stress generation by in situ substrate curvature measurements during the growth of MoN x thin films, with 0≤x≤0.35, and of structural properties by ex situ X-ray diffraction (XRD), transmission electron microscopy (TEM), transmission electron diffraction (TED), X-ray photoelectron spectroscopy (XPS), and electron energy-loss spectroscopy (EELS) is reported. It was found that the Mo film stresses strongly depended on the Ar sputtering pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 6-12 mTorr. For pressures exceeding ∼40 mTorr, the stress in the film was nearly zero. Cross-sectional TEM measurements indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the mechanical tensile stresses. It was also found that the properties of the deposited MoN x films depended not only on the nitrogen partial pressure in Ar-N 2 gas mixtures but also on the total sputtering-gas pressure. Cross-sectional TEM studies showed that an average column width for 160 nm-thick films near stoichiometry of Mo 2 N was about ∼15-20 nm. Using the electron scattering data collected from a range of crystalline samples for calculating the pair distribution function (PDF) by Fourier transformation in real space, Mo-N and Mo-Mo bonding in the films was also identified. Once the Mo 2 N phase was formed, the density, microstructure and bonding feature were similar and insensitive to the total sputtering pressure used in this study

  18. An analysis of the impact of native oxide, surface contamination and material density on total electron yield in the absence of surface charging effects

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Susumu, E-mail: susumu.iida@toshiba.co.jp [EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken, 305-8569 (Japan); Ohya, Kaoru [Institute of Technology and Science, The University of Tokushima, 2-1 Minamijyousanjima-cho,Tokushima, 770-8506 (Japan); Hirano, Ryoichi; Watanabe, Hidehiro [EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken, 305-8569 (Japan)

    2016-10-30

    Highlights: • Total electron yields were assessed in the absence of any surface charging effect. • Experimental and simulation results showed a low native oxide energy barrier. • The yield enhancement effect of a native oxide layer was confirmed. • The yield enhancement effect of a thin surface contamination layer was confirmed. • Deviations in the material density from the theoretical values were evaluated. - Abstract: The effects of the presence of a native oxide film or surface contamination as well as variations in material density on the total electron yield (TEY) of Ru and B{sub 4}C were assessed in the absence of any surface charging effect. The experimental results were analyzed using semi-empirical Monte Carlo simulations and demonstrated that a native oxide film increased the TEY, and that this effect varied with film thickness. These phenomena were explained based on the effect of the backscattered electrons (BSEs) at the interface between Ru and RuO{sub 2}, as well as the lower potential barrier of RuO{sub 2}. Deviations in the material density from the theoretical values were attributed to the film deposition procedure based on fitting simulated TEY curves to experimental results. In the case of B{sub 4}C, the TEY was enhanced by the presence of a 0.8-nm-thick surface contamination film consisting of oxygenated hydrocarbons. The effect of the low potential barrier of the contamination film was found to be significant, as the density of the B{sub 4}C was much lower than that of the Ru. Comparing the simulation parameters generated in the present work with Joy’s database, it was found that the model and the input parameters used in the simulations were sufficiently accurate.

  19. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  20. Simple model of surface roughness for binary collision sputtering simulations

    Science.gov (United States)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-02-01

    It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

  1. Fission fragment yields and total kinetic energy release in neutron-induced fission of235,238U,and239Pu

    Science.gov (United States)

    Tovesson, F.; Duke, D.; Geppert-Kleinrath, V.; Manning, B.; Mayorov, D.; Mosby, S.; Schmitt, K.

    2018-03-01

    Different aspects of the nuclear fission process have been studied at Los Alamos Neutron Science Center (LANSCE) using various instruments and experimental techniques. Properties of the fragments emitted in fission have been investigated using Frisch-grid ionization chambers, a Time Projection Chamber (TPC), and the SPIDER instrument which employs the 2v-2E method. These instruments and experimental techniques have been used to determine fission product mass yields, the energy dependent total kinetic energy (TKE) release, and anisotropy in neutron-induced fission of U-235, U-238 and Pu-239.

  2. Measurement of the helicity-dependent total cross-section for the {gamma}n{yields} p {pi}{sup -}{pi}{sup 0} reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ahrens, J.; Arends, H.J.; Beck, R.; Heid, E.; Jahn, O.; Lang, M.; Martinez-Fabregate, M.; Tamas, G.; Thomas, A. [Universitaet Mainz, Institut fuer Kernphysik, Mainz (Germany); Altieri, S.; Panzeri, A.; Pinelli, T. [INFN, Sezione di Pavia, Pavia (Italy); Universita di Pavia, Dipartimento di Fisica Nucleare e Teorica, Pavia (Italy); Annand, J.R.M.; McGeorge, J.C.; Protopopescu, D.; Rosner, G. [University of Glasgow, SUPA, School of Physics and Astronomy, Glasgow (United Kingdom); Blackston, M.A.; Weller, H.R. [Duke University, Department of Physics, Durham, NC (United States); Bradtke, C.; Dutz, H.; Klein, F.; Rohlof, C. [Universitaet Bonn, Physikalisches Institut, Bonn (Germany); Braghieri, A.; Pedroni, P. [INFN, Sezione di Pavia, Pavia (Italy); Hose, N. d' [DSM/DAPNIA/SPhN, CEA Saclay, Gif-sur-Yvette Cedex (France); Fix, A. [Tomsk Polytechnic University, Laboratory of Mathematical Physics, Tomsk (Russian Federation); Kondratiev, R.; Lisin, V. [Academy of Science, INR, Moscow (Russian Federation); Meyer, W.; Reicherz, G. [Ruhr-Universitaet Bochum, Insitut fuer Experimentalphysik, Bochum (Germany); Rostomyan, T. [Universiteit Gent, Subatomaire en Stralingsfysica, Gent (Belgium); INFN, Sezione di Pavia, Pavia (Italy); Ryckbosch, D. [Universiteit Gent, Subatomaire en Stralingsfysica, Gent (Belgium)

    2011-03-15

    The helicity dependence of the total cross-section for the {gamma}n{yields}p{pi}{sup -}{pi}{sup 0} reaction has been measured for the first time at incident photon energies from 450 to 800MeV. The measurement was performed with the large-acceptance detector DAPHNE at the tagged photon beam facility of the MAMI accelerator in Mainz. Both the measured unpolarized and the helicity-dependent observables are not well described by the existing theoretical models. (orig.)

  3. Effect of variable power levels on the yield of total aerosol mass and formation of aldehydes in e-cigarette aerosols.

    Science.gov (United States)

    Gillman, I G; Kistler, K A; Stewart, E W; Paolantonio, A R

    2016-03-01

    The study objective was to determine the effect of variable power applied to the atomizer of refillable tank based e-cigarette (EC) devices. Five different devices were evaluated, each at four power levels. Aerosol yield results are reported for each set of 25 EC puffs, as mass/puff, and normalized for the power applied to the coil, in mass/watt. The range of aerosol produced on a per puff basis ranged from 1.5 to 28 mg, and, normalized for power applied to the coil, ranged from 0.27 to 1.1 mg/watt. Aerosol samples were also analyzed for the production of formaldehyde, acetaldehyde, and acrolein, as DNPH derivatives, at each power level. When reported on mass basis, three of the devices showed an increase in total aldehyde yield with increasing power applied to the coil, while two of the devices showed the opposite trend. The mass of formaldehyde, acetaldehyde, and acrolein produced per gram of total aerosol produced ranged from 0.01 to 7.3 mg/g, 0.006 to 5.8 mg/g, and acrolein from EC aerosols from specific devices, and were compared to estimated exposure from consumption of cigarettes, to occupational and workplace limits, and to previously reported results from other researchers. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.

  4. The sputtering of the deformed gold under irradiation with krypton swift heavy ions

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; Semina, V.K.; Hofman, A.

    2002-01-01

    The results about sputtering yield of gold irradiated by 86 Kr ions with high inelastic energy losses up to a fluence of 10 14 ion/cm 2 are presented. It was shown that the sputtering (evaporation) yield strongly depends on the initial defect concentration in gold. The sputtering yield begins to grow very strongly with the increasing of damage created by heavy ion elastic and inelastic energy losses. The temperature on the surface in the area around krypton ion trajectory is much higher than the melting and evaporation temperatures for gold as follows from calculations with the various expressions and models

  5. A cellular automata simulation study of surface roughening resulting from multi-atom etch pit generation during sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Toh, Y S; Nobes, M J; Carter, G [Dept. of Electronic and Electrical Engineering, Univ. of Salford (United Kingdom)

    1992-04-01

    A two-dimensional square matrix of pseudo-atomic positions is erected and atom removal from the ''surface'' is effected randomly. Either single atoms or groups of atoms (to simulate multi-atom pit generation) are removed. The characteristics of the evolving roughened, terraced ''surface'' are evaluated as a function of the total number of atoms, or equivalent numbers of atomic layers, removed. These characteristics include the ''mean'' position of the sputtered surface, the standard deviation of terrace length about the mean and the form of the terrace length distributions. The results of the single-atom removal mode compare exactly with theoretical predictions in that, for large numbers of atoms removed the depth position of the mean of the terrace length distribution is identical to the mean sputtered depth and the standard deviation increases as the square root of this depth. For multi-atom removal modes (which cannot be predicted theoretically) the standard deviation also increases as the square root of the mean sputtered depth but with a larger proportionality constant. The implications of these observations for the evolution of surface morphology during high yield sputtering is discussed. (orig.).

  6. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  7. Sputtering of neutral and ionic indium clusters

    International Nuclear Information System (INIS)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-01-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

  8. Effects of 20 standard amino acids on the growth, total fatty acids production, and γ-linolenic acid yield in Mucor circinelloides.

    Science.gov (United States)

    Tang, Xin; Zhang, Huaiyuan; Chen, Haiqin; Chen, Yong Q; Chen, Wei; Song, Yuanda

    2014-12-01

    Twenty standard amino acids were examined as single nitrogen source on the growth, total fatty acids production, and yield of γ-linolenic acid (GLA) in Mucor circinelloides. Of the amino acids, tyrosine gave the highest biomass and lipid accumulation and thus resulted in a high GLA yield with respective values of 17.8 g/L, 23 % (w/w, dry cell weight, DCW), and 0.81 g/L, which were 36, 25, and 72 % higher than when the fungus was grown with ammonium tartrate. To find out the potential mechanism underlying the increased lipid accumulation of M. circinelloides when grown on tyrosine, the activity of lipogenic enzymes of the fungus during lipid accumulation phase was measured. The enzyme activities of glucose 6-phosphate dehydrogenase, 6-phosphogluconate dehydrogenase, and ATP-citrate lyase were up-regulated, while NADP-isocitrate dehydrogenase was down-regulated by tyrosine during the lipid accumulation phase of the fungus which suggested that these enzymes may be involved in the increased lipid biosynthesis by tyrosine in this fungus.

  9. Sputter coating of microspherical substrates by levitation

    Science.gov (United States)

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  10. Theory of thermal sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1977-01-01

    An energetic ion which is incident on a solid target causes a momentary temperature increase in the impact region, i.e., a so-called thermal spike occurs. Such spikes are capable of causing (or supplementing) disordering, precipitation, crystallization, electronic excitation, stoichiometry change, desorption, and sputtering, it being the contribution to sputtering that is considered here. The approach used is compatible with modern damage-distribution theory. Thus the temperature profile left by the incident ion is taken as a three-dimensional Gaussian with parameters appropriate to power-law scattering, and is used as the initial condition for solving the heat-conduction equation. Let us write this solution as T = T(t, y), where t is time and y is a dimension parallel to the target surface. The vaporization flux from a solid surface is taken as pnsup(1/2)(2π 2 >kT)sup(-1/2), where p, the equilibrium pressure of a vapor species containing n atoms, can be written as p 0 exp(-L/T), p 0 and L are constants largely independent of temperature, and 2 > is the mean mass per atom of target. An equation for the thermal sputtering coefficient is given: after integration the final result takes the form: Ssub(thermal)=pnsup(1/2)[2π 2 >k(Tsub(infinity)+cΔT 0 )]sup(-1/2)πlambda 2 tsub(eff.)atoms/ion, where Tsub(infinity) is the macroscopic target temperature, cΔT 0 is the maximum temperature increase at x = y = 0, p is to be evaluated at T = Tsub(infinity) + cΔT 0 , lambda is the mean atomic spacing of the target, and tsub(eff.) is a quantity with units of time. (author)

  11. Energy sharing and sputtering in low-energy collision cascades

    International Nuclear Information System (INIS)

    Weller, R.A.; Weller, M.R.

    1982-01-01

    Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

  12. Energy dependence of the molecular effect in sputtering

    International Nuclear Information System (INIS)

    Oliva-Florio, A.R.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Jakas, M.M.

    1979-01-01

    Measurements are reported of sputtering yields of Au for Xe + and Xe 2 + impact in the energy range 1 to 50 keV. It was found that non-linear effects exist well outside the range predicted in a recent thermal spike model. (author)

  13. Energy dependence of the molecular effect in sputtering

    International Nuclear Information System (INIS)

    Oliva-Florio, A.R.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Jakas, M.M.

    1979-01-01

    Measurements of sputtering yields of Au for Xe + and Xe + 2 impact in the energy range 1-50 keV are given. It was found that non-linear effects exist well outside the range predicted in a recent thermal spike model. (author)

  14. Study of carbon impurity generation by chemical sputtering in JT-60U

    International Nuclear Information System (INIS)

    Higashijima, S.; Kubo, H.; Sugie, T.; Shimizu, K.; Asakura, N.; Itami, K.; Hosogane, N.; Sakasai, A.; Konoshima, S.; Sakurai, S.; Takenaga, H.

    1997-01-01

    CD/CH-band intensities emitted from hydrocarbon molecules have been measured in the divertor region of JT-60U and the chemical sputtering yield of methane was estimated as a function of the surface temperature and the deuterium ion flux. The chemical sputtering yield increases with the surface temperature and decreases with increasing ion flux density in the L-mode plasmas. The B 4 C converted CFC tiles are installed in JT-60U and it is found that the chemical sputtering of B 4 C converted CFC tiles is suppressed in comparison to normal CFC tiles. (orig.)

  15. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  16. Control chart analysis of data regarding 0.2% yield strength (YS) and percent total circumferential elongation (%TCE) for zircaloy clad tubes for PHWR and BWR fuels

    International Nuclear Information System (INIS)

    Yadav, M.B.; Singh, Hari; Vaidyanathan, S.; Sood, D.D.; Raghavan, S.V.; Bandyopadhyay, A.K.; Kulkarni, P.G.

    1992-01-01

    Zircaloy cladding tubes for PHWR and BWR fuels are manufactured and tested at Nuclear Fuel Complex (NFC), Hyderabad. Atomic Fuels Division is carrying out the quality assurance of the fuels on behalf of Nuclear Power Corporation (NPC). In this paper an attempt has been made to assess whether the quality of the clad tubes has met the requirements specified for the two mechanical properties of the tubes namely 0.2% yield strength and percent total circumferential elongation using control chart technique. For this purpose data for about 100 lots in each case were used. Process means and process standard deviations for these properties and the control limits for the corresponding control charts were estimated. The main findings are: (i) In case of PHWR tubes the production quality level with respect to 0.2% YS is higher, while that in case of %TCE is lower causing rejection of lots. On the other hand in the case of BWR tubes the production quality levels with respect to both the properties are higher than the required one. (ii) With respect to 0.2% YS, in case of BWR tubes a change in the pattern of distribution is detected beyond the lot serial no.47. However in case of PHWR tubes, though the data falls into two groups, no such pattern is seen. A modification in the acceptance/rejection criterion of the lot has been suggested. It is also pointed out that to have a correct picture of the total variation it is necessary to study the within tube variation. (author). 4 figs, 2 tabs

  17. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  18. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  19. Sputtering of a silicon surface: Preferential sputtering of surface impurities

    Czech Academy of Sciences Publication Activity Database

    Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

    -, č. 303 (2013), s. 205-208 ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

  20. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  1. Sputtering of amorphous carbon layers studied by laser induced fluorescence

    International Nuclear Information System (INIS)

    Pasch, E.

    1992-07-01

    In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

  2. Carbon Back Sputter Modeling for Hall Thruster Testing

    Science.gov (United States)

    Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John T.

    2016-01-01

    In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) program, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Centers Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 3 4 mkhour in a fully carbon-lined chamber. A more detailed numerical monte carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values, on the order of 1.5- 2 microns/khour.

  3. Investigation of argon ion sputtering on the secondary electron emission from gold samples

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jing; Cui, Wanzhao, E-mail: cuiwanzhao@126.com; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

    2016-09-30

    Highlights: • An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. • After sputtering, A decrease of δmax and an increase of E1 were observed with increasing Eion. • Further sputtering at higher energies broaden the SE spectra, and the equivalent work function, ϕ, increase considerably to 12.6 eV. - Abstract: Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called “work function” (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

  4. Investigation of argon ion sputtering on the secondary electron emission from gold samples

    International Nuclear Information System (INIS)

    Yang, Jing; Cui, Wanzhao; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

    2016-01-01

    Highlights: • An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. • After sputtering, A decrease of δmax and an increase of E1 were observed with increasing Eion. • Further sputtering at higher energies broaden the SE spectra, and the equivalent work function, ϕ, increase considerably to 12.6 eV. - Abstract: Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called “work function” (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

  5. Study of the chemical sputtering in Tore-Supra

    International Nuclear Information System (INIS)

    Cambe, A.

    2002-01-01

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C 2 D x and C 3 D y ) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD 4 (Y CD4 ) is highly flux (φ) dependent, showing a variation of the form: Y CD4 ∝ φ -0.23 . The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y CD4 . The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

  6. Loads and yields of deicing compounds and total phosphorus in the Cambridge drinking-water source area, Massachusetts, water years 2009–15

    Science.gov (United States)

    Smith, Kirk P.

    2017-09-12

    The source water area for the drinking-water supply of the city of Cambridge, Massachusetts, encompasses major transportation corridors, as well as large areas of light industrial, commercial, and residential land use. Because of the large amount of roadway in the drinking-water source area, the Cambridge water supply is affected by the usage of deicing compounds and by other constituents that are flushed from such impervious areas. The U.S. Geological Survey (USGS) has monitored surface-water quality in the Cambridge Reservoir and Stony Brook Reservoir Basins, which compose the drinking-water source area, since 1997 (water year 1998) through continuous monitoring and the collection of stream-flow samples.In a study conducted by the USGS, in cooperation with the City of Cambridge Water Department, concentrations and loads of calcium (Ca), chloride (Cl), magnesium (Mg), sodium (Na), and sulfate (SO4) were estimated from continuous records of specific conductance and streamflow for streams and tributaries at 10 continuous water-quality monitoring stations. These data were used to characterize current (2015) water-quality conditions, estimate loads and yields, and describe trends in Cl and Na in the tributaries and main-stem streams in the Cambridge Reservoir and Stony Brook Reservoir Basins. These data also were used to describe how stream-water quality is related to various basin characteristics and provide information to guide future management of the drinking-water source area.Water samples from 2009–15 were analyzed for physical properties and concentrations of Ca, Cl, Mg, Na, potassium (K), SO4, and total phosphorus (TP). Values of physical properties and constituent concentrations varied widely, particularly in composite samples of stormflow from tributaries that have high percentages of constructed impervious areas. Median concentrations of Ca, Cl, Mg, Na, and K in samples collected from the tributaries in the Cambridge Reservoir Basin (27.2, 273, 4.7, 154

  7. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Zhu Lin

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

  8. Calculation of total free energy yield as an alternative approach for predicting the importance of potential chemolithotrophic reactions in geothermal springs.

    Science.gov (United States)

    Dodsworth, Jeremy A; McDonald, Austin I; Hedlund, Brian P

    2012-08-01

    To inform hypotheses regarding the relative importance of chemolithotrophic metabolisms in geothermal environments, we calculated free energy yields of 26 chemical reactions potentially supporting chemolithotrophy in two US Great Basin hot springs, taking into account the effects of changing reactant and product activities on the Gibbs free energy as each reaction progressed. Results ranged from 1.2 × 10(-5) to 3.6 J kg(-1) spring water, or 3.7 × 10(-5) to 11.5 J s(-1) based on measured flow rates, with aerobic oxidation of CH(4) or NH4 + giving the highest average yields. Energy yields calculated without constraining pH were similar to those at constant pH except for reactions where H(+) was consumed, which often had significantly lower yields when pH was unconstrained. In contrast to the commonly used normalization of reaction chemical affinities per mole of electrons transferred, reaction energy yields for a given oxidant varied by several orders of magnitude and were more sensitive to differences in the activities of products and reactants. The high energy yield of aerobic ammonia oxidation is consistent with previous observations of significant ammonia oxidation rates and abundant ammonia-oxidizing archaea in sediments of these springs. This approach offers an additional lens through which to view the thermodynamic landscape of geothermal springs. © 2012 Federation of European Microbiological Societies. Published by Blackwell Publishing Ltd. All rights reserved.

  9. Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

    Science.gov (United States)

    Stark, C. R.; Diver, D. A.

    2018-04-01

    Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

  10. Sputtering of vanadium and niobium under 14.1 MeV neutron impact

    International Nuclear Information System (INIS)

    Kaminsky, M.; Das, S.K.

    1976-01-01

    The recent studies of particle emission from cold-rolled and annealed niobium under 14.1-MeV neutron impact were extended to a heavily etched, polycrystalline niobium surface and to cold worked vanadium surfaces with different degrees of microstructure. The type and amount of material released and deposited on collector surfaces facing the irradiated targets were determined by three analytical techniques. Two types of deposits were found for certain types of surfaces--one in the form of chunks; the other as a fractional atom layer covering the surface. The chunks vary significantly in size. The small number of chunks observed suggests that the ejection of chunks is a relatively rare event in comparison to the total number of primary knock-on events produced by 14-MeV neutrons in near surface regions. Estimates of the total sputtering yield based on the chunk deposits and on the fractional atom layer deposit will be given

  11. Contribution to the study of sputtering and damage of uranium dioxide by fast heavy ions

    International Nuclear Information System (INIS)

    Schlutig, S.

    2001-03-01

    Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO 2 targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models proposed in the literature and it seems that the supersonic gas flow model is well suited to describe our results. Finally, the sputtering yields are compared with a set of earlier experimental data on uranium dioxide damage obtained by T. Wiss and we observe that only a small fraction of UO 2 monolayers are sputtered. (author)

  12. Fluctuations in atomic collision cascades - variance and correlations in sputtering and defect distributions

    International Nuclear Information System (INIS)

    Chakarova, R.; Pazsit, I.

    1997-01-01

    Fluctuation phenomena are investigated in various collision processes, i.e. ion bombardment induced sputtering and defect creation. The mean and variance of the sputter yield and the vacancies and interstitials are calculated as functions of the ion energy and the ion-target mass ratio. It is found that the relative variance of the defects in half-spaces and the relative variance of the sputter yield are not monotonous functions of the mass ratio. Two-point correlation functions in the depth variable, as well as sputtered energy, are also calculated. These functions help interpreting the behaviour of the relative variances of the integrated quantities, as well as understanding the cascade dynamics. All calculations are based on Lindhard power-law cross sections and use a binary collision Monte Carlo algorithm. 30 refs, 25 figs

  13. Fluctuations in atomic collision cascades - variance and correlations in sputtering and defect distributions

    Energy Technology Data Exchange (ETDEWEB)

    Chakarova, R.; Pazsit, I.

    1997-01-01

    Fluctuation phenomena are investigated in various collision processes, i.e. ion bombardment induced sputtering and defect creation. The mean and variance of the sputter yield and the vacancies and interstitials are calculated as functions of the ion energy and the ion-target mass ratio. It is found that the relative variance of the defects in half-spaces and the relative variance of the sputter yield are not monotonous functions of the mass ratio. Two-point correlation functions in the depth variable, as well as sputtered energy, are also calculated. These functions help interpreting the behaviour of the relative variances of the integrated quantities, as well as understanding the cascade dynamics. All calculations are based on Lindhard power-law cross sections and use a binary collision Monte Carlo algorithm. 30 refs, 25 figs.

  14. A theoretical approach to sputtering due to molecular ion bombardment, 1

    International Nuclear Information System (INIS)

    Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

    1981-01-01

    A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

  15. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    Energy Technology Data Exchange (ETDEWEB)

    Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-15

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  16. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

    1994-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  17. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

    1993-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  18. Sputtering of solid nitrogen and oxygen by keV hydrogen ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Stenum, B.

    1994-01-01

    Electronic sputtering of solid nitrogen and oxygen by keV hydrogen ions has been studied at two low-temperature setups. The yield of the sputtered particles has been determined in the energy regime 4-10 keV for H+, H-2+ and H-3+ ions. The yield for oxygen is more than a factor of two larger than...... that for nitrogen. The energy distributions of the sputtered N2 and O2 molecules were measured for hydrogen ions in this energy regime as well. The yields from both solids turn out to depend on the sum of the stopping power of all atoms in the ion. The yield increases as a quadratic function of the stopping power...

  19. Faraday screen sputtering on TPX

    International Nuclear Information System (INIS)

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author's emphasis will be on both impurity generation as a possible source of increased Z eff , and also on actual erosion-lifetime of the materials under worst case conditions

  20. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  1. Depth resolution and preferential sputtering in depth profiling of sharp interfaces

    International Nuclear Information System (INIS)

    Hofmann, S.; Han, Y.S.; Wang, J.Y.

    2017-01-01

    Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

  2. Depth resolution and preferential sputtering in depth profiling of sharp interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, S. [Max Planck Institute for Intelligent Systems (formerly MPI for Metals Research), Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Han, Y.S. [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China)

    2017-07-15

    Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

  3. Monocrystal sputtering by the computer simulation code ACOCT

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takeuchi, Wataru.

    1987-09-01

    A new computer code ACOCT has been developed in order to simulate the atomic collisions in the crystalline target within the binary collision approximation. The present code is more convenient as compared with the MARLOWE code, and takes the higher-order simultaneous collisions into account. To cheke the validity of the ACOCT program, we have calculated sputtering yields for various ion-target combinations and compared with the MARLOWE results. It is found that the calculated yields by the ACOCT program are in good agreements with those by the MARLOWE code. The ejection patterns of sputtered atoms were also calculated for the major surfaces of fcc, bcc, diamond and hcp structures, and we have got reasonable agreements with experimental results. In order to know the effects of the simultaneous collision in the slowing down process the sputtering yields and the projected ranges are calculated, changeing the parameter of the criterion for the simultaneous collision, and the effect of the simultaneous collision is found to depend on the crystal orientation. (author)

  4. C60 ion sputtering of layered organic materials

    International Nuclear Information System (INIS)

    Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

    2008-01-01

    Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

  5. Dry anaerobic co-digestion of food waste and cattle manure: Impact of total solids, substrate ratio and thermal pre treatment on methane yield and quality of biomanure.

    Science.gov (United States)

    Arelli, Vijayalakshmi; Begum, Sameena; Anupoju, Gangagni Rao; Kuruti, Kranti; S, Shailaja

    2018-04-01

    The objective of the present study is to assess the impact of TS concentration, substrate mixing ratio (co digestion) and thermal pretreatment on biogas production, methane yield, VS reduction (%) and quality of biomanure through dry anaerobic digestion (DAD) of food waste (FW) and cattle manure (CM). Results divulged that the optimum methane yield and biomanure of 0.18 and 0.21 m 3 CH 4 /(kg VS reduced) and 3.15 and 2.8 kg/kg waste was obtained from FW at TS of 25% and 30% at an HRT of 41 and 31 days respectively whereas it was 0.32 and 0.43 m 3 CH 4 /(kg VS reduced) and 2.2 and 1.15 kg/kg waste from pretreated FW at an HRT of 16 and 20 days correspondingly. Improvement of methane from 62 to 81% was obtained due to thermal pretreatment. The highest nutrient recovery in terms of N, P, K was found to be 5.14, 2.6 and 3.2 respectively. Copyright © 2018 Elsevier Ltd. All rights reserved.

  6. Total levels of tissue inhibitor of metalloproteinases 1 in plasma yield high diagnostic sensitivity and specificity in patients with colon cancer

    DEFF Research Database (Denmark)

    Holten-Andersen, Mads N; Christensen, Ib Jarle; Nielsen, Hans Jørgen

    2002-01-01

    : Total TIMP-1 plasma levels were measured by ELISA in blood samples from two different blood donor populations from IBD patients, and preoperative samples from patients with primary colon cancer (CC), rectal cancer (RC), or breast cancer. RESULTS: There were no significant differences in plasma TIMP-1......PURPOSE: The purpose of this study was to measure total levels of tissue inhibitor of metalloproteinases (TIMP-1) by ELISA in plasma from blood donors, patients with inflammatory bowel disease (IBD), and patients with cancer and to correlate the results to patient diagnosis. EXPERIMENTAL DESIGN...... levels between healthy donors and IBD or breast cancer patients, whereas patients with CC or RC had significantly elevated TIMP-1 levels. Total TIMP-1 levels identified patients with CC with a sensitivity of 63% at 98% specificity, patients with early CC (Dukes' A+B) with a sensitivity of 56% at 98...

  7. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  8. The effect of the molecular mass on the sputtering by electrosprayed nanodroplets

    Energy Technology Data Exchange (ETDEWEB)

    Borrajo-Pelaez, Rafael; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu

    2015-07-30

    Highlights: • We study the effect of the molecular mass on nanodroplet sputtering of silicon. • The impact phenomenology is a strong function of the projectile’s molecular mass. • Nanodroplet sputtering intrinsically is a molecular scale phenomenon. - Abstract: Energetic bombardment of covalently bonded materials by electrosprayed nanodroplets causes sputtering and topographic changes on the surface of the target. This work investigates the influence of the projectile's molecular mass on these phenomena by sputtering single-crystal silicon wafers with a variety of liquids (molecular masses between 45.0 and 773.3 amu), and acceleration voltages. The electrosprays are characterized via time of flight to determine the charge to mass ratio of the nanodroplets which, together with the acceleration voltage, yield the impact velocity, the stagnation pressure, and the molecular kinetic energy of the projectile. The estimated range of droplet diameters is 20–79 nm, while the impact velocity, the stagnation pressure and the molecular kinetic energy range between 2.9–10 km/s, 4.7–63 GPa, and 2.1–98 eV. We find that the damage on the surface of the targets strongly depends on the molecular mass of the projectile: liquids with low molecular mass sputter significantly less and produce nanometric indentations and low surface roughness, the latter increasing moderately with stagnation pressure; in contrast, the roughness and sputtering caused by the impacts of droplets with larger molecular mass reach significantly higher values, and exhibit non-monotonic behaviors. The maximum sputtering yields for formamide, EAN, EMI-BF{sub 4}, EMI-Im, TES, and TPP are 0.20, 0.75, 1.20, 2.80, 4.00 and 2.90 silicon atoms per molecule in the projectile. These trends indicate that despite their rather large diameters, the sputtering by electrosprayed nanodroplets is intrinsically a molecular scale phenomenon.

  9. Molecular dynamic simulations of the sputtering of multilayer organic systems

    CERN Document Server

    Postawa, Z; Piaskowy, J; Krantzman, K; Winograd, N; Garrison, B J

    2003-01-01

    Sputtering of organic overlayers has been modeled using molecular dynamics computer simulations. The investigated systems are composed of benzene molecules condensed into one, two and three layers on an Ag left brace 1 1 1 right brace surface. The formed organic overlayers were bombarded with 4 keV Ar projectiles at normal incidence. The development of the collision cascade in the organic overlayer was investigated. The sputtering yield, mass, internal and kinetic energy distributions of ejected particles have been analyzed as a function of the thickness of the organic layer. The results show that all emission characteristics are sensitive to the variation of layer thickness. Although most of the ejected intact benzene molecules originate from the topmost layer, the emission of particles located initially in second and third layers is significant. The analysis indicates that the metallic substrate plays a dominant role in the ejection of intact organic molecules.

  10. Collision cascades and sputtering induced by larger cluster ions

    International Nuclear Information System (INIS)

    Sigmund, P.

    1988-01-01

    Recent experimental work on larger cluster impact on solid surfaces suggests large deviations from the standard case of additive sputter yields both in the nuclear and electronic stopping regime. The paper concentrates on elastic collision cascades. In addition to very pronounced spike effects, two phenomena are pointed out that are specific to cluster bombardment. Multiple hits of cluster atoms on one and the same target atom may result in recoil atoms that move faster than the maximum recoil speed for monomer bombardment at the same projectile speed. This effect is important when the atomic mass of a beam atom is less than that of a target atom, M 1 2 . In the opposite case, M 1 >> M 2 , collisions between beam particles may accelerate some beam particles and slow down others. Some consequences are mentioned. Remarks on the nuclear stopping power of larger clusters and on electronic sputtering by cluster bombardment conclude the paper. 38 refs., 2 figs

  11. Contribution to the study of {pi}{sup -} + p {yields} {pi}{sup 0} + n and {pi}{sup -} + p {yields} {pi}{sup 0} + {pi} + n reactions at the energies of the maxima of the {pi}-nucleon interaction in the T = 1/2 state total cross section; Contribution a l'etude des reactions {pi}{sup -} + p {yields} {pi}{sup 0} + n et {pi}{sup -} + p {yields} {pi}{sup 0} + n aux energies des maxima de la section efficace totale de l'interaction {pi}{sup -} nucleon dans l'etat de spin isobarique T = 1/2

    Energy Technology Data Exchange (ETDEWEB)

    Turlay, R [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1962-07-01

    In the first part of this experiment, we determined the total cross section for processes yielding only neutral particles, from 300 to 1600 MeV. For this, we counted the number of incident {pi}{sup -}, as defined by a counter telescope, which interact in a liquid-hydrogen target without giving charged particles in a 4{pi} counter surrounding the target. In the second part of this experiment, we have separated the reaction {pi}{sup -} p {yields} {pi}{sup 0} n and {pi}{sup -} p {yields} {pi}{sup 0} {pi}{sup 0} n between 300 and 1100 MeV, by supposing that only these two reactions was realized by placing lead absorbers between the target and 4{pi} counter and by comparing the counting rate for neutral events with and without lead. The transmission thus measured is a function of the average number of photons produced and therefore of the ratio between the two neutral channels, {pi}{sup 0} n and {pi}{sup 0} {pi}{sup 0} n. In the last section of this work, we discuss the experimental results and compare them to those obtained by other authors in the study of photoproduction and the {pi}-nucleon interaction. (author) [French] Dans une premiere partie de cette experience, nous determinons la section efficace totale des processus ne donnant naissance qu'a des particules neutres de 300 et 1 600 MeV. Pour cela nous comptons le nombre de {pi}{sup -}, defini par un telescope incident, qui interagissent dans une cible d'hydrogene liquide sans donner de particules chargees dans un compteur 4{pi} entourant cette cible. Dans la deuxieme partie de l'experience nous avons separe les reactions {pi}{sup -} p {yields} {pi}{sup 0} n et {pi}{sup -} p {yields} {pi}{sup 0} {pi}{sup 0} n entre 300 et 1 600 MeV en supposant que seules ces deux voies soient importantes a ces energies. La separation de ces deux reactions a ete realisee en placant des ecrans de plomb entre la cible et le compteur 4 {pi}, et en comparant les traces de comptage des evenements a secondaires neutres avec et sans

  12. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  13. Simulation experiments and solar wind sputtering

    International Nuclear Information System (INIS)

    Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

    1978-01-01

    In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

  14. Sputtering and emission intensity of copper alloys in a Grimm glow lamp

    International Nuclear Information System (INIS)

    Yamada, T.; Kashima, J.; Naganuma, K.

    1981-01-01

    The effects of the metallurgical structure and the aluminium content of copper-aluminium alloy (1-12% Al) on the sputtering and intensities of spectral lines in the Grimm glow lamp are reported. The electrical current and sputtering yield decreased linearly with increasing aluminium content; the intensities of the Al I lines depended linearly on the amount of aluminium in the sputtering yield at a fixed voltage and argon pressure. The structure affected the intensities of the Al I and Cu I lines but not the intensity ratio (Al I/Cu I) for about 100 s after burn-off. Working curves for aluminium for samples of different structure were very similar. (Auth.)

  15. Observation of self-sputtering in energetic condensation of metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2004-01-01

    The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-state-averaged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased substrates exposed to streaming Zr and Au vacuum arc plasma. The self-sputtering yields for both metals were estimated to be about 0.05 in the absence of bias, and exceeding 0.5 when bias reached-50 V. These surprisingly high values can be reconciled with binary collision theory and molecular dynamics calculations taking high the kinetic and potential energy of vacuum arc ions into account

  16. Precise atomic-scale investigations of material sputtering process by light gas ions in pre-threshold energy region

    CERN Document Server

    Suvorov, A L

    2002-01-01

    Foundation and prospects of the new original technique of the sputtering yield determination of electro-conducting materials and sub-atomic layers on their surface by light gas ions the pre-threshold energy region (from 10 to 500 eV) are considered. The technique allows to identify individual surface vacancies, i.e., to count individual sputtered atoms directly. A short review of the original results obtained by using the developed techniques is given. Data are presented and analyzed concerning energy thresholds of the sputtering onset and energy dependences of sputtering yield in the threshold energy region for beryllium, tungsten, tungsten oxide, alternating tungsten-carbon layers, three carbon materials as well as for sub-atomic carbon layers on surface of certain metals at their bombardment by hydrogen, deuterium and/or helium ions

  17. Equity yields

    NARCIS (Netherlands)

    Vrugt, E.; van Binsbergen, J.H.; Koijen, R.S.J.; Hueskes, W.

    2013-01-01

    We study a new data set of dividend futures with maturities up to ten years across three world regions: the US, Europe, and Japan. We use these asset prices to construct equity yields, analogous to bond yields. We decompose the equity yields to obtain a term structure of expected dividend growth

  18. Binding energy effects in cascade evolution and sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1995-06-01

    The MARLOWE model was extended to include a binding energy dependent on the local crystalline order, so that atoms are bound less strongly to their lattice sites near surfaces or associated damage. Sputtering and cascade evolution were studied on the examples of self-ion irradiations of Cu and Au monocrystals. In cascades, the mean binding energy is reduced ∼8% in Cu with little dependence on the initial recoil energy; in Au, it is reduced ∼9% at 1 keV and ∼15% at 100 keV. In sputtering, the mean binding energy is reduced ∼8% in Cu and ∼15% in Au with little energy dependence; the yields are increased about half as much. Most sites from which sputtered atoms originate are isolated in both metals. Small clusters of such sites occur in Cu, but there are some large clusters in Au, especially in [111] targets. There are always more large clusters with damage-dependent binding than with a constant binding energy, but only a few clusters are compact enough to be regarded as pits

  19. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  20. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  1. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  2. Chemical sputtering of graphite by H+ ions

    International Nuclear Information System (INIS)

    Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

    1976-01-01

    In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

  3. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  4. Net sputtering rate due to hot ions in a Ne-Xe discharge gas bombarding an MgO layer

    International Nuclear Information System (INIS)

    Ho, S.; Tamakoshi, T.; Ikeda, M.; Mikami, Y.; Suzuki, K.

    2011-01-01

    An analytical method is developed for determining net sputtering rate for an MgO layer under hot ions with low energy ( h i , above a threshold energy of sputtering, E th,i , multiplied by a yield coefficient. The threshold energy of sputtering is determined from dissociation energy required to remove an atom from MgO surface multiplied by an energy-transfer coefficient. The re-deposition rate of the sputtered atoms is calculated by a diffusion simulation using a hybridized probabilistic and analytical method. These calculation methods are combined to analyze the net sputtering rate. Maximum net sputtering rate due to the hot neon ions increases above the partial pressure of 4% xenon as E h Ne becomes higher and decreases near the partial pressure of 20% xenon as ion flux of neon decreases. The dependence due to the hot neon ions on partial pressure and applied voltage agrees well with experimental results, but the dependence due to the hot xenon ions deviates considerably. This result shows that the net sputtering rate is dominated by the hot neon ions. Maximum E h Ne (E h Ne,max = 5.3 - 10.3 eV) is lower than E th,Ne (19.5 eV) for the MgO layer; therefore, weak sputtering due to the hot neon ions takes place. One hot neon ion sputters each magnesium and each oxygen atom on the surface and distorts around a vacancy. The ratio of the maximum net sputtering rate is approximately determined by number of the ions at E h i,max multiplied by an exponential factor of -E th,i /E h i,max .

  5. MUXS: a code to generate multigroup cross sections for sputtering calculations

    International Nuclear Information System (INIS)

    Hoffman, T.J.; Robinson, M.T.; Dodds, H.L. Jr.

    1982-10-01

    This report documents MUXS, a computer code to generate multigroup cross sections for charged particle transport problems. Cross sections generated by MUXS can be used in many multigroup transport codes, with minor modifications to these codes, to calculate sputtering yields, reflection coefficients, penetration distances, etc

  6. Investigation of argon ion sputtering on the secondary electron emission from gold samples

    Science.gov (United States)

    Yang, Jing; Cui, Wanzhao; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

    2016-09-01

    Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An ;equivalent work function; is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called ;work function; (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

  7. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  8. Prototype inverted sputter source for negative heavy ions

    International Nuclear Information System (INIS)

    Minehara, Eisuke; Kobayashi, Chiaki; Kikuchi, Shiroh

    1977-10-01

    A sputter source from which negative heavy ion beam is extracted through a tungsten wire and disc ionizer was built and tested. An alkali metal surface ionization gun with the ionizer is described, and also performance of the surface ionization gun and of the sputter source for negative heavy ions using the gun is reported. The gun was tested for three alkali metals, i.e. sodium, potassium and cesium. Total potassium beam current of 1-2mA was obtained at entrance aperture of the magnet. Sputtering materials and gases for producing negative heavy ions are carbon, copper, aluminium, molybdenum, oxygen and air. With carbon and leakage air, the beam intensities analyzed are: 2-5μA (at Faraday cup) and 4.6-11μA (at exit slit) for C - , 3-5μA (at Faraday cup) and 6.8-11μA (at exit slit) for 2C - , and 11-15μA (at Faraday cup) and 25-34μA (at exit slit) for O - . Total beam current at the entrance aperture was 200-400μA. (auth.)

  9. Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, Mitsuaki, E-mail: m-takeuchi@kuee.kyoto-u.ac.jp; Hoshide, Yuki; Ryuto, Hiromichi; Takaoka, Gikan H. [Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

    2016-03-15

    The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

  10. Improving yield of PZT piezoelectric devices on glass substrates

    Science.gov (United States)

    Johnson-Wilke, Raegan L.; Wilke, Rudeger H. T.; Cotroneo, Vincenzo; Davis, William N.; Reid, Paul B.; Schwartz, Daniel A.; Trolier-McKinstry, Susan

    2012-10-01

    The proposed SMART-X telescope includes adaptive optics systems that use piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. Several processing constraints are imposed by current designs: the crystallization temperature must be kept below 550 °C, the total stress in the film must be minimized, and the yield on 1 cm2 actuator elements should be work, RF magnetron sputtering was used to deposit films since chemical solution deposition (CSD) led to warping of large area flexible glass substrates. A PZT 52/48 film that wasdeposited at 4 mTorr and annealed at 550 °C for 24 hours showed no detectable levels of either PbO or pyrochlore second phases. Large area electrodes (1cm x 1 cm) were deposited on 4" glass substrates. Initially, the yield of the devices was low, however, two methods were employed to increase the yield to near 100 %. The first method included a more rigorous cleaning to improve the continuity of the Pt bottom electrode. The second method was to apply 3 V DC across the capacitor structure to burn out regions of defective PZT. The result of this latter method essentially removed conducting filaments in the PZT but left the bulk of the material undamaged. By combining these two methods, the yield on the large area electrodes improved from < 10% to nearly 100%.

  11. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  12. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  13. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  14. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  15. Sensitivity and stability of sputtered sandwich photocells

    International Nuclear Information System (INIS)

    Murray, H.; Piel, A.

    1979-01-01

    The physical parameters of sputtered Metal-Semiconductor-Metal photocells are described in view of solar energy conversion. Specific properties of sputtered films lead to a particular stability of physical parameters such as dark conduction, capacitance and dielectric losses. Interband transitions occur when the photon energy is larger than the bandgap of the photoconductor. The transport of photo-excited carriers in the built-in electric field involves the existence of a photovoltaic effect. The influence of sputtering on the specific properties of solar energy conversion is discussed. (author)

  16. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    Brooks, J.N.; Ruzic, D.N.

    1990-01-01

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  17. Experimental investigation of the energy and temperature dependence of beryllium self sputtering

    International Nuclear Information System (INIS)

    Korshunov, S.N.; Guseva, M.I.; Stolijarova, V.G.

    1995-01-01

    The low-Z metal beryllium is considered as plasma facing material (PFM) for the ITER. It is expected that operation temperature range of beryllium PFM will be (670 - 1070) K. While experimental Be-sputtering data bases exist for H + , D + and He + -ions, the self-sputtering yields of Be have only been estimated by computer simulation. In this paper we report the experimental results on the energy and temperature dependence of the beryllium self-sputtering yield (S). The energy dependence of S s in the energy range (0.5 - 10.0) keV was measured at 670 K. The self-sputtering yield of Be attains its maximal value at the ion energy of 1.5 keV, being equal to 0.32 ± at./ion. Comparison of the experimental results and theoretical prediction shows a good agreement for energy dependence of S s . The temperature dependence of S s in the temperature range (370-1070)K was obtained for 0.9keV Be + -ions. The value of S s is not changed up to 870 K. It sharply increases at the temperatures above 870 attaining the value of 0.75 at./ion at 1070 K

  18. Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

    Science.gov (United States)

    Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

    2014-10-01

    Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

  19. A fundamental analysis of the validity of thermodynamic models of ionized and excited particle production during sputtering

    International Nuclear Information System (INIS)

    Snowdon, K.J.

    1979-01-01

    The concept of LTE and its existence criteria are applied to the sputtering problem. After presenting arguments against the existence of LTE within the solid, expressions are derived which allow a calculation of the minimum secondary electron yields and sputtering conditions required for the establishment of partial and complete LTE within the hemisphere or hemispherical shell immediately above the point of impact of an incident, heavy projectile. It is found by application of the theory of 50 keV Ar + bombardment of zinc that secondary electron yields per incident projectile of greater than 10 5 are required before either complete, or partial, LTE can be established during sputtering. Further refinements of the model are not expected to reduce this figure the four or more orders of magnitude required for agreement with experimental yields. (author)

  20. Influence of the atomic structure on the quantum state of sputtered Ir atoms

    International Nuclear Information System (INIS)

    Bastiaansen, J.; Philipsen, V.; Lievens, P.; Silverans, R.E.; Vandeweert, E.

    2004-01-01

    The probability of the ejection of a neutral atom in a specific quantum state after keV-ion beam sputtering is often interpreted in terms of the interaction between the atomic states of the escaping atom and the electronic states of the solid. In this work, we examined this interplay in the sputtering of iridium as this element has--unlike the elements employed in previous investigations--a complex atomic structure due to strong configuration interactions. Double-resonant two-photon laser ionization is used to probe the sputtered Ir atoms yielding information about the probability for an ejected atom to populate a specific atomic state and its escape velocity. The qualitative features of the corresponding population partition and state-selective velocity distributions show the influence of the excitation energy and the electronic structure of the different atomic states. A comparison is made between the experimental data and predictions from the resonant electron transfer description

  1. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  2. Study on low-energy sputtering near the threshold energy by molecular dynamics simulations

    Directory of Open Access Journals (Sweden)

    C. Yan

    2012-09-01

    Full Text Available Using molecular dynamics simulation, we have studied the low-energy sputtering at the energies near the sputtering threshold. Different projectile-target combinations of noble metal atoms (Cu, Ag, Au, Ni, Pd, and Pt are simulated in the range of incident energy from 0.1 to 200 eV. It is found that the threshold energies for sputtering are different for the cases of M1 < M2 and M1 ≥ M2, where M1 and M2 are atomic mass of projectile and target atoms, respectively. The sputtering yields are found to have a linear dependence on the reduced incident energy, but the dependence behaviors are different for the both cases. The two new formulas are suggested to describe the energy dependences of the both cases by fitting the simulation results with the determined threshold energies. With the study on the energy dependences of sticking probabilities and traces of the projectiles and recoils, we propose two different mechanisms to describe the sputtering behavior of low-energy atoms near the threshold energy for the cases of M1 < M2 and M1 ≥ M2, respectively.

  3. Alkali metal adsorbate sputtering by molecular impact

    International Nuclear Information System (INIS)

    Moran, J.P.; Wachman, H.Y.; Trilling, L.

    1974-01-01

    An exploratory study of the sputtering by a krypton molecular beam of rubidium adsorbed at low coverage on a tungsten substrate has been described in a previous paper. An extension of this work is reported now

  4. The Kansas State University revolving sputter source

    International Nuclear Information System (INIS)

    Tipping, T.N.

    1989-01-01

    It has been that the perfect ion source is one which runs in a very stable mode, runs continuously, and has the ability to change ion species without sacrificing the previous two requirements. This paper presents an approximation to the perfect ion source, the KSU Revolving Sputter Source. The source consists of an Aarhus-geometry sputter source with the addition of a rotating wheel which holds eight sputter cathodes. The wheel consists of a front plate with eight fixed Macor insulators and a back plate with eight Macor insulators held in place by the tension of eight springs. The cathode assembly consists of a copper cartridge with a threaded rod on one end and a sputter cathode with a threaded hole on the back. The cathode is screwed onto the cartridge and the whole assembly may be loaded into the wheel. A small spring on the side of the cartridge holds the assembly in the wheel

  5. Electrical resistivity of sputtered molybdenum films

    International Nuclear Information System (INIS)

    Nagano, J.

    1980-01-01

    The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

  6. Large Area Sputter Coating on Glass

    Science.gov (United States)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  7. Solar wind sputtering of small bodies: Exospheres of Phobos and Deimos

    Science.gov (United States)

    Schaible, M. J.; Johnson, R. E.; Lee, P.; Benna, M.; Elphic, R. C.

    2014-12-01

    Solar wind, magnetospheric ions and micrometeorites impact the surface of airless bodies in the solar system and deposit energy in the surface material. Excitation and momentum transfer processes lead to sputtering or desorption of molecules and atoms, thereby creating a dynamic exosphere about an otherwise airless body. Ion mass spectrometry of ejected materials provides a highly sensitive method for detecting sputter products and determining the surface composition [Johnson and Baragiola, 1991; Elphic et al., 1991]. Though most of the material is sputtered as neutral gas, UV photons can ionize ejected neutrals and a small fraction of the ejecta leaves the surface in an ionized state. However, ions are deflected by the variably-oriented solar wind magnetic field and thus relating their detection to a surface location can be problematic. Here we estimate the average ion density close to the surface of Phobos or Deimos to predict whether modern mass spectrometry instruments [Mahaffey et al. 2014] would be able to obtain sufficient compositional information to place constraints on their origin. The open source Monte Carlo program SRIM.SR was used to simulate the effect of ions incident onto a surface representing several different meteorite compositions and gave estimates of the damage and sputtering effects. As much of the empirical data supporting SRIM results comes from sputtering of metallic and organic molecular targets which can differ greatly from materials that make up planetary surfaces, measurements of cohesive energies and enthalpies of formation were used to estimate the surface binding energies for minerals, though these can vary significantly depending on the chemical composition. Since these properties affect the sputtering yield, comparisons of simulations with laboratory measurements were made to test the validity of our estimates. Using the validated results and a constant fraction to estimate ion yields, the density of ejected ions and neutrals vs

  8. Spatial distributions of Cu polycrystal sputtered atoms

    International Nuclear Information System (INIS)

    Abgaryan, V.K.; Semenov, A.A.; Shkarban, I.I.

    2004-01-01

    The results of the experimental determination of the Cu atoms spatial distribution, sputtered from the polycrystalline copper target, irradiated by the Xe + ions with the energy of 300 eV, are presented. The spatial distributions of the sputtered particles, calculated through the quasistable-dynamic model of the cascade modeling (CAMO) are presented also for the case of the polycrystalline copper irradiation by the Ar + and Xe + ions with the energy of 300-1000 eV [ru

  9. Sputtering of sodium on the planet Mercury

    Science.gov (United States)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  10. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  11. Ion beam sputter coatings for laser technology

    Science.gov (United States)

    Ristau, Detlev; Gross, Tobias

    2005-09-01

    The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

  12. Simulation calculations of physical sputtering and reflection coefficient of plasma-irradiated carbon surface

    International Nuclear Information System (INIS)

    Kawamura, T.; Ono, T.; Yamamura, Y.

    1994-08-01

    Physical sputtering yields from the carbon surface irradiated by the boundary plasma are obtained with the use of a Monte Carlo simulation code ACAT. The yields are calculated for many random initial energy and angle values of incident protons or deuterons with a Maxwellian velocity distribution, and then averaged. Here the temperature of the boundary plasma, the sheath potential and the angle δ between the magnetic field line and the surface normal are taken into account. A new fitting formula for an arrangement of the numerical data of sputtering yield is introduced, in which six fitting parameters are determined from the numerical results and listed. These results provide a way to estimate the erosion of carbon materials irradiated by boundary plasma. The particle reflection coefficients for deuterons and their neutrals from a carbon surface are also calculated by the same code and presented together with, for comparison, that for the case of monoenergetic normal incidence. (author)

  13. Monte Carlo calculations of ligth-ion sputtering as a function of the incident angle

    International Nuclear Information System (INIS)

    Haggmark, L.G.; Biersack, J.P.

    1980-01-01

    The sputtering of metal surfaces by light ions has been studied as a function of the incident angle using an extension of the TRIM Monte Carlo computer program. Sputtering yields were calculated at both normal and oblique angles of incidence for H, D, T, and 4 He impinging on Ni, Mo, and Au targets with energies <= 10 keV. Direct comparisons are made with the most recent experimental and theoretical results. There is generally good agreement with the experimental data although our calculated maximum in the yield usually occurs at a smaller incident angle, measured from the surface normal. The enhancement of the yield at large incident angles over that at normal incidence is observed to be a complex function of the incident ion's energy and mass and the target's atomic weight and surface binding energy. (orig.)

  14. Entrapment of krypton in sputter deposited metals: a storage medium for radioactive gases

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Bayne, M.A.; Moss, R.W.

    1979-04-01

    Sputter deposition of metals with a negative substrate bias results in a deposit containing relatively large concentrations of the sputtering gas. This phenomenon has been applied as a technique for storage of the radioactive gas, 85 Kr, which is generated in nuclear fuels for power production. Alloys which sputter to yield an amorphous product have been shown to contain up to 12 atom % Kr [42 cm 3 of Kr(STP)/g of deposit; concentration equivalent to a gas at 4380 psi pressure]. Release from these metals occurs at so low a rate that extrapolation to long times yields a 85 Kr release at 300 0 C of about 0.06% in 100 years. A preliminary evaluation of the engineering feasibility and economics of the sputtering process indicates that 85 Kr can be effectively trapped in a solid matrix with currently available techniques on a scale required for handling DOE-generated waste or commercial reprocessed fuels and that the cost should not be a limiting factor

  15. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  16. Investigation of the drastic change in the sputter rate of polymers at low ion fluence

    International Nuclear Information System (INIS)

    Zekonyte, J.; Zaporojtchenko, V.; Faupel, F.

    2005-01-01

    The polymer sputter rate dependence on ion fluence and ion chemistry (Ar, N 2 , O 2 ) at 1 keV energy was investigated using a quartz crystal microbalance (QCM) which allowed to do real time etch rate measurements and to study kinetics of sputtering. The obtained sputter rates differed drastically from polymer to polymer showing, that the chemical structure of polymer is an important factor in the polymer etch yield. A decrease in the sputter rate was observed up to ion fluence of 5 x 10 14 -5 x 10 15 cm -2 (depending on the polymer type and ion chemistry) followed by the saturation in the rate at prolonged ion bombardment. Polymer removal was accompanied by the formation of degradation products, cross-linking or branching, modification of the surface chemical structure, which was studied in situ using XPS. The dependence of the surface glass transition temperature, T gs on the ion fluence was studied using the method based on the embedding of metallic nanoparticles. The correlation between chemical yield data and ablation rate is discussed

  17. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  18. Computer simulation of sputtering: A review

    International Nuclear Information System (INIS)

    Robinson, M.T.; Hou, M.

    1992-08-01

    In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

  19. Reflection and self-sputtering of nickel at oblique angles of ion incidence

    International Nuclear Information System (INIS)

    Hechtl, E.; Eckstein, W.; Roth, J.

    1994-01-01

    Measurement of the erosion yield of a target under ion bombardment using the weight change determines the sum of the sputtering yield and the particle reflection coefficient. The different erosion behavior of a volatile (Kr) and a nonvolatile projectile (Ni) are investigated on a nickel target in the energy range from 60 eV to 10 keV at an incidence angle of 75 . The angular dependence of the erosion yield is studied for 100, 500, and 2500 eV. In comparison with Monte Carlo calculations using the TRIM.SP program it is shown that at low energies ( 1 keV). (orig.)

  20. Serial co-sputtering. Development of a versatile coating technology and its characterization using the example of rate enhancement of metal oxides by co-doping; Serielles Co-Sputtern. Entwicklung einer flexiblen Beschichtungstechnologie und deren Charakterisierung am Beispiel der Ratenerhoehung von Metalloxiden durch Co-Dotierung

    Energy Technology Data Exchange (ETDEWEB)

    Austgen, Michael

    2011-09-19

    Focus of this work is the design and characterization of a versatile coating system based on magnetron sputter deposition. This technology consists of a rotary target (primary target) that will be sputtered at one position and also can be coated at a different position with a secondary material by another sputter process. This simultaneous operation and the serial order of two sputter processes is the serial co-sputter process. A highly elaborated gas separation allows the operation of the primary sputter process in a reactive gas atmosphere whereas the secondary process can be driven in a non-reactive atmosphere. Compared to conventional co-sputtering the gas separation enables a stable operation of the secondary sputter process even if reactive gas is added to the primary sputter process. To develop an understanding of the process dynamics of serial co-sputtering the rate enhancement of metal oxides by co-doping with heavy atoms has been investigated first. If heavy elements are added to the target material the collision cascades can be reflected back towards the target surface by a more efficient momentum transfer and therefore increase the sputtering rate. The addition of heavy atoms can be achieved by serial co-sputtering. In the secondary sputter process the heavy element will be sputter deposited onto the rotary target. When entering the erosion zone of the primary sputter process the heavy atoms will be partially sputtered away and partially recoil implanted beneath the target surface. The later will contribute to the sputter yield amplification effect described above. In this work the sputter yield amplification effect has been investigated for the metal oxides Al{sub 2}O{sub 3} and TiO{sub 2} by co-doping of a aluminum and titanium rotary target with the heavy element tungsten (Z=74) and bismuth (Z=83). The primary process variables are the O{sub 2}-gas flow which determines the working point of the primary sputtering process, the rotation speed of the

  1. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper

  2. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Mi, Shu, E-mail: mishu@buaa.edu.cn; Liu, Rui, E-mail: liurui1987@buaa.edu.cn; Li, Yuanyuan, E-mail: buaaliyuan@163.com; Ye, Jun, E-mail: yejun@iphy.ac.cn; Xie, Yong, E-mail: xiey@buaa.edu.cn; Chen, Ziyu, E-mail: chenzy@buaa.edu.cn

    2016-04-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1{sub 0} phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  3. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    International Nuclear Information System (INIS)

    Mi, Shu; Liu, Rui; Li, Yuanyuan; Ye, Jun; Xie, Yong; Chen, Ziyu

    2016-01-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1 0 phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  4. Particle-balance models for pulsed sputtering magnetrons

    Science.gov (United States)

    Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

    2017-09-01

    The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

  5. Physical sputtering of metallic systems by charged-particle impact

    International Nuclear Information System (INIS)

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

  6. Quantitative sputter profiling at surfaces and interfaces

    International Nuclear Information System (INIS)

    Kirschner, J.; Etzkorn, H.W.

    1981-01-01

    The key problem in quantitative sputter profiling, that of a sliding depth scale has been solved by combined Auger/X-ray microanalysis. By means of this technique and for the model system Ge/Si (amorphous) the following questions are treated quantitatively: shape of the sputter profiles when sputtering through an interface and origin of their asymmetry; precise location of the interface plane on the depth profile; broadening effects due to limited depth of information and their correction; origin and amount of bombardment induced broadening for different primary ions and energies; depth dependence of the broadening, and basic limits to depth resolution. Comparisons are made to recent theoretical calculations based on recoil mixing in the collision cascade and very good agreement is found

  7. Sputtering as a means of depth profiling

    International Nuclear Information System (INIS)

    Whitton, J.L.

    1978-01-01

    Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

  8. Surface chemistry and cytotoxicity of reactively sputtered tantalum oxide films on NiTi plates

    Energy Technology Data Exchange (ETDEWEB)

    McNamara, K. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Kolaj-Robin, O.; Belochapkine, S.; Laffir, F. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Gandhi, A.A. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Tofail, S.A.M., E-mail: tofail.syed@ul.ie [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland)

    2015-08-31

    NiTi, an equiatomic alloy containing nickel and titanium, exhibits unique properties such as shape memory effect and superelasticity. NiTi also forms a spontaneous protective titanium dioxide (TiO{sub 2}) layer that allows its use in biomedical applications. Despite the widely perceived biocompatibility there remain some concerns about the sustainability of the alloy's biocompatibility due to the defects in the TiO{sub 2} protective layer and the presence of high amount of sub-surface Ni, which can give allergic reactions. Many surface treatments have been investigated to try to improve both the corrosion resistance and biocompatibility of this layer. For such purposes, we have sputter deposited tantalum (Ta) oxide thin films onto the surface of the NiTi alloy. Despite being one of the promising metals for biomedical applications, Ta, and its various oxides and their interactions with cells have received relatively less attention. The oxidation chemistry, crystal structure, morphology and biocompatibility of these films have been investigated. In general, reactive sputtering especially in the presence of a low oxygen mixture yields a thicker film with better control of the film quality. The sputtering power influenced the surface oxidation states of Ta. Both microscopic and quantitative cytotoxicity measurements show that Ta films on NiTi are biocompatible with little to no variation in cytotoxic response when the surface oxidation state of Ta changes. - Highlights: • Reactive sputtering in low oxygen mixture yields thicker better quality films. • Sputtering power influenced surface oxidation states of Ta. • Cytotoxicity measurements show Ta films on NiTi are biocompatible. • Little to no variation in cytotoxic response when oxidation state changes.

  9. Photonometers for coating and sputtering machines

    Directory of Open Access Journals (Sweden)

    Václavík J.

    2013-05-01

    Full Text Available The concept of photonometers (alternative name of optical monitor of a vacuum deposition process for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  10. Photonometers for coating and sputtering machines

    Science.gov (United States)

    Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

    2013-04-01

    The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  11. Carbonaceous Particles Production in a Sputtering Discharge

    International Nuclear Information System (INIS)

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-01-01

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms

  12. Examination of excited state populations in sputtering using Multiphoton Resonance Ionization

    International Nuclear Information System (INIS)

    Kimock, F.M.; Baxter, J.P.; Pappas, D.L.; Kobrin, P.H.; Winograd, N.

    1984-01-01

    Multiphoton Resonance Ionization has been employed to study the populations of excited state atoms ejected from ion bombarded metal surfaces. Preliminary investigations have focused on three model systems: aluminum, indium and cobalt. In this paper the authors examine the effect of primary ion energy (2 to 12 keV Ar + ) on excited state yields for these three systems. The influence of the sample matrix on excited state populations of sputtered atoms is also discussed

  13. Examination of excited state populations in sputtering using multiphoton resonance ionization

    International Nuclear Information System (INIS)

    Kimock, F.M.; Baxter, J.P.; Pappas, D.L.; Kobrin, P.H.; Winograd, N.

    1984-01-01

    Multiphoton Resonance Ionization has been employed to study the populations of excited state atoms ejected from ion bombarded metal surfaces. Preliminary investigations have focused on three model systems: aluminum, indium and cobalt. In this paper we examine the effect of primary ion energy (2 to 12 keV Ar + ) on excited state yields for these three systems. The influence of the sample matrix on excited state populations of sputtered atoms is also discussed. 8 refs., 4 figs

  14. Classical scattering cross section in sputtering transport theory

    International Nuclear Information System (INIS)

    Zhang Zhulin

    2002-01-01

    For Lindhard scaling interaction potential scattering commonly used in sputtering theory, the authors analyzed the great difference between Sigmund's single power and the double power cross sections calculated. The double power cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m∼0.1). In particular, to solve the transport equations by K r -C potential interaction given by Urbassek few years ago, only the double power cross sections (m∼0.1) can yield better approximate results for the number of recoils. Therefore, the Sigmund's single power cross section might be replaced by the double power cross sections in low energy collision cascade theory

  15. In vitro behaviour of nanocrystalline silver-sputtered thin films

    International Nuclear Information System (INIS)

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  16. Influência de épocas de plantio e cultivares no rendimento total da cultura do alho (Allium sativum l. em Santa Maria, RS Planting date and cultivar influence on the total yield of garlic (Allium sativum L. in Santa Maria, RS

    Directory of Open Access Journals (Sweden)

    Jorge Nadir Trevisan

    1996-04-01

    Full Text Available O experimento foi conduzido na Universidade Federal de Santa Maria, RS, no ano agrícola de 1984, afim de avaliar a influência de três épocas de plantio (27 de abril, 18 de maio e 14 de julho na produção total de bulbos de nove cultivares de alho (Allium sativum L.. Utilizou-se o delineamento de blocos ao acaso com parcelas subdivididas, com quatro repetições. Os maiores rendimentos totais de bulbos foram obtidos no plantio de 18 de maio. Gigante Lavínia foi a cultivar mais produtiva. As cultivares São Lourenço e Gigante Inconfidentes destacaram-se pelos rendimentos, os quais não diferiram significativamente entre si.The experiment was carried out at the Federal University of Santa Maria, in southernmost Brazil, during the growing season of 1984, to determine the influence of three different planting dates (April 27, May 18 and July 14 on the yield of nine garlic, Allium sativum Z., cultivars. The experimental design was a split plot complete block, with planting dates as main plots and cultivars as subplots. Blocks were replicated four times. The highest yields were obtained with planting date May 18. Gigante Lavínia ranked first among cultivars. The outstanding performances of São Lourenço and Gigante Inconfidentes were not significantly different.

  17. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  18. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-01-01

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

  19. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    Science.gov (United States)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

  20. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    International Nuclear Information System (INIS)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

  1. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  2. Laser-based secondary neutral mass spectroscopy: Useful yield and sensitivity

    International Nuclear Information System (INIS)

    Young, C.E.; Pellin, M.J.; Calaway, W.F.; Joergensen, B.; Schweitzer, E.L.; Gruen, D.M.

    1986-01-01

    A variety of problems exist in order to optimally apply resonance ionization spectroscopy (RIS) to the detection of sputtered neutral atoms, however. Several of these problems and their solutions are examined in this paper. First, the possible useful yields obtainable and the dependence of useful yield on various laser parameters for this type of sputtered neutral mass spectrometer (SNMS) are considered. Second, the choice of a mass spectrometer and its effect on the instrumental useful yield is explored in light of the unique ionization region for laser based SNMS. Finally a brief description of noise sources and their effect on the instrumental sensitivity is discussed. 33 refs., 12 figs

  3. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

    Directory of Open Access Journals (Sweden)

    Xinghao Liang

    2018-02-01

    Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

  4. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  5. Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

    International Nuclear Information System (INIS)

    Shulga, V.I.

    2014-01-01

    The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

  6. Pumping behavior of sputter ion pumps

    International Nuclear Information System (INIS)

    Chou, T.S.; McCafferty, D.

    The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

  7. Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

    Science.gov (United States)

    Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

    2018-03-01

    Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

  8. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  9. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  10. Origins of Beta Tantalum in Sputtered Coatings

    National Research Council Canada - National Science Library

    Mulligan, C

    2001-01-01

    .... Some of the most recent work has attempted to relate the energetics (i.e., atom/ion energy) of the plasma to the alpha right arrow beta transition. It has been shown that the energetics of the plasma can relate to the most crucial sputtering parameters. The most significant feature of the use of plasma energy to explain the alpha right arrow beta transition is that it relates the formation of beta-tantalum to a quantifiable measure.

  11. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  12. Tests of a new axial sputtering technique in an ECRIS

    International Nuclear Information System (INIS)

    Scott, R.; Pardo, R.; Vondrasek, R.

    2012-01-01

    Axial and radial sputtering techniques have been used over the years to create beams from an ECRIS at multiple accelerator facilities. Operational experience has shown greater beam production when using the radial sputtering method versus axial sputtering. At Argonne National Laboratory, previous work with radial sputtering has demonstrated that the position of the sputter sample relative to the plasma chamber wall influences sample drain current, beam production and charge state distribution. The possibility of the chamber wall acting as a ground plane which influences the sputtering of material has been considered, and an attempt has been made to mimic this possible ground plane effect with a coaxial sample introduced from the injection end. Results of these tests will be shown as well as comparisons of outputs using the two methods. The paper is followed by the associated poster. (authors)

  13. Work function dependence and isotope effect in the production of negative hydrogen ions during sputtering of adsorbed hydrogen on Cs covered Mo(100) surfaces

    International Nuclear Information System (INIS)

    Yu, M.L.

    1977-01-01

    The enhancement of the H - yield, during sputtering of adsorbed hydrogen on a Mo(100) surface, by a Cs overlayer was investigated. An exponential dependence of the H - yield on the work function was observed for a wide range of Cs coverages. A simple electron tunneling model was proposed. A large reduction in the ion yield was also observed when D 2 replaced H 2 as the adsorbate

  14. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  15. Sputtering induced surface composition changes in copper-palladium alloys

    International Nuclear Information System (INIS)

    Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

    1981-01-01

    It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

  16. Data compilation of angular distributions of sputtered atoms

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

    1990-01-01

    Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

  17. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

    International Nuclear Information System (INIS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

    2016-01-01

    Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

  18. NUMERICAL SIMULATIONS OF SUPERNOVA DUST DESTRUCTION. I. CLOUD-CRUSHING AND POST-PROCESSED GRAIN SPUTTERING

    International Nuclear Information System (INIS)

    Silvia, Devin W.; Smith, Britton D.; Michael Shull, J.

    2010-01-01

    We investigate through hydrodynamic simulations the destruction of newly formed dust grains by sputtering in the reverse shocks of supernova (SN) remnants. Using an idealized setup of a planar shock impacting a dense, spherical clump, we implant a population of Lagrangian particles into the clump to represent a distribution of dust grains in size and composition. We then post-process the simulation output to calculate the grain sputtering for a variety of species and size distributions. We explore the parameter space appropriate for this problem by altering the overdensity of the ejecta clumps and the speed of the reverse shocks. Since radiative cooling could lower the temperature of the medium in which the dust is embedded and potentially protect the dust by slowing or halting grain sputtering, we study the effects of different cooling methods over the timescale of the simulations. In general, our results indicate that grains with radii less than 0.1 μm are sputtered to much smaller radii and often destroyed completely, while larger grains survive their interaction with the reverse shock. We also find that, for high ejecta densities, the percentage of dust that survives is strongly dependent on the relative velocity between the clump and the reverse shock, causing up to 50% more destruction for the highest velocity shocks. The fraction of dust destroyed varies widely across grain species, ranging from total destruction of Al 2 O 3 grains to minimal destruction of Fe grains (only 20% destruction in the most extreme cases). C and SiO 2 grains show moderate to strong sputtering as well, with 38% and 80% mass loss. The survival rate of grains formed by early SNe is crucial in determining whether or not they can act as the 'dust factories' needed to explain high-redshift dust.

  19. Deposition and characterization of sputtered hexaboride coatings

    International Nuclear Information System (INIS)

    Waldhauser, W.

    1996-06-01

    Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  20. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  1. Development of the sputter coater for hotcell

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Yong Bum; Kwon, H. M.; Chun, Y. B.; Yang, Y. S.; Joo, J. S.; Jang, N. M

    2007-05-15

    In last december, the Wavelength Dispersive Spectroscopy (WDS) was installed on the shielded SEM of PIEF, KAERI. Before the first major WDS analysis service at the end of 2007, one among the prior technologies, the hot-cell sputter coater was remodelled from a commercial product and set up inside the glove box. This report describes effects of a coating layer on quantitative analysis, the remodelling of a coater suited to hot-cell, and the performance test of the remodelled coater. Also, written in 1998 was revised and appended to the report.

  2. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  3. Electronic sputtering by swift highly charged ions of nitrogen on amorphous carbon

    International Nuclear Information System (INIS)

    Caron, M.; Haranger, F.; Rothard, H.; Ban d'Etat, B.; Boduch, P.; Clouvas, A.; Potiriadis, C.; Neugebauer, R.; Jalowy, T.

    2001-01-01

    Electronic sputtering with heavy ions as a function of both electronic energy loss dE/dx and projectile charge state q was studied at the French heavy ion accelerator GANIL. Amorphous carbon (untreated, and sputter-cleaned and subsequently exposed to nitrogen) was irradiated with swift highly charged ions (Z=6-73, q=6-54, energy 6-13 MeV/u) in an ultrahigh vacuum scattering chamber. The fluence dependence of ion-induced electron yields allows to deduce a desorption cross-section σ which varies approximately as σ∼(dE/dx) 1.65 or σ∼q 3.3 for sputter-cleaned amorphous carbon exposed to nitrogen. This q dependence is close to the cubic charge dependence observed for the emission of H + secondary ions which are believed to be emitted from the very surface. However, the power law σ∼(dE/dx) 1.65 , related to the electronic energy loss gives the best empirical description. The dependence on dE/dx is close to a quadratic one thus rather pointing towards a thermal evaporation-like effect

  4. Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

    Directory of Open Access Journals (Sweden)

    Hariyadi Soetedjo

    2018-03-01

    Full Text Available Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1 and (2 0 0 occurs during deposition. Keywords: Thin films, Lead sulfide, Sputtering, Resistivity, Semiconductor, Infrared

  5. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  6. Niobium films produced by magnetron sputtering using an Ar-He mixture as discharge gas

    CERN Document Server

    Schucan, G M; Calatroni, Sergio

    1995-01-01

    Superconducting RF accelerating cavities have been produced at CERN by sputter-coating, with a thin niobium layer, cavities made of copper. In the present work, the discharge behaviour and niobium film properties have been investigated when part of the argon sputtering gas is replaced with helium. Helium is chosen because of its low mass, which reduces the energy lost by the niobium atoms colliding with the sputter gas atoms. The higher niobium atom energy should lead to higher adatom mobility on the substrate and, hence, to a larger grain size, a feature which is highly desirable to reduce the cavity surface resistance. It has been found that helium addition effectively helps to maintain the discharge at considerably lower argon pressures, via metastable-neutral ionisation and high secondary electron yield. However, a large amount of helium is trapped in the film, amount which is proportional to the helium partial pressure during the discharge, resulting in a reduction of both Residual Resistivity Ratio and ...

  7. Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

    Science.gov (United States)

    Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

    2017-11-01

    Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

  8. Effects of variable sticking coefficients on the stability of reactive sputtering process

    International Nuclear Information System (INIS)

    Li Chuan; Hsieh Janghsing

    2004-01-01

    In reactive sputtering, the introduction of a reactive gas can lead to a hysteresis transition from metal to compounds in both the target and substrate. The hysteresis transition is characterized by a sudden change in partial pressure, sputtering rate, fraction of compound formation, etc. Therefore, stability is an important issue in the process control. In this paper, a mathematical model with variable sticking coefficients based on surface kinetics is used to study the stability of the process. The variable sticking coefficient represents different mechanisms for surface reactions from the Langmuir to precursor type. In order to facilitate the analysis, several nondimensional parameters are identified and used for formulation. Results show that an unsteady system converges to a steady state relatively fast at low inflow rates. With an eigenvalue analysis, the range of positive eigenvalues is consistent with the presence of a hysteresis loop. It is also found that when the chemical reaction on the substrate is moderate, a higher sputter yield of the compound leads to a more stable steady state at lower inflow rates. Regarding the sticking mechanism, for the type of precursors with the parameter k < 1, the compound is easier to form and saturate on the surface due to the higher default sticking coefficient and the lower operating conditions for the hysteresis transition

  9. Crescimento e produtividade do almeirão em concentrações de N total contendo NH4+ na solução nutritiva Growth and yield of chicory plants under total N concentrations containing NH4+ in the nutrient solution

    Directory of Open Access Journals (Sweden)

    Rodrigo dos Santos Godoi

    2007-08-01

    Full Text Available O crescimento e a produtividade do almeirão foram determinados em cultivo hidropônico fechado com cinco concentrações de N contendo NH4+ na solução nutritiva. As cultivares "Amarelo" e "Pão de Açúcar" foram semeadas diretamente em fileiras distanciadas de 0,05m, em uma camada de areia de 0,15m, distribuída sobre telhas de fibrocimento. Após a emergência, foi efetuado o desbaste, mantendo-se uma densidade de 1.600plantas m-2. Foi empregada uma solução nutritiva padrão com a composição de, em mmol L-1, 11,0 de NO3-; 1,5 de H2PO4-; 6,5 de SO4-2; 7,5 de Ca+2; 10,0 de K+ e 1,5 de Mg+2 e, em mg L-1, 0,42 de Mn; 0,26 de Zn; 0,05 de Cu; 0,50 de B; 0,04 de Mo, e 4,82 de Fe quelatizado. Os tratamentos foram constituídos por concentrações totais de N de 11,0 (T1; 16,0 (T2; 21,0 (T3; 26,0 (T4 e 31,0 (T5mmol L-1, contendo concentrações de NH4+ de, zero; 2,5; 5,0; 7,5 e 10,0mmol L-1, respectivamente. O delineamento experimental inteiramente casualizado foi empregado, com quatro repetições e parcelas subdivididas. Foram efetuadas colheitas aos 35, 59, 76 e 97 dias após a semeadura, mediante corte da parte aérea das plantas a 0,02m acima da superfície da areia, para determinar a matéria seca e fresca. A maior produtividade foi obtida com a solução nutritiva contendo 16mmol L-1 de N total e 2,5mmol L-1 de NH4+.Chicory plants, cv. Amarela and Pão de Açúcar, were hidroponically grown to determine growth and yield under five ammonium and nitrate N concentrations in the nutrient solution. Sowing was made in rows placed 0.05m apart, over a 0.15m deep sand growing bed supported by fibber cement tiles. After emergency, plants were thinned to a plant density of 1,600plants m-2. A standard nutrient solution was used, with the composition of, in mmol L-1, 11.0 de NO3-; 1.5 H2PO4-; 6.5 SO4-2; 7.5 Ca+2; 10.0 K+ and 1.5 Mg+2, and, in mg L-1, 0.42 Mn; 0.26 Zn; 0.05 Cu; 0.50 B; 0.04 Mo, and 4.82 chelated Fe. Treatments were total N

  10. Ion source with radiofrequency mass filter for sputtering purposes

    International Nuclear Information System (INIS)

    Sielanko, J.; Sowa, M.

    1990-01-01

    The Kaufman ion source with radiofrequency mass filter is described. The construction as well as operating characteristics of ion source are presented. The arrangement is suitable for range distribution measurements of implanted layers, where the sputtering rate has to be constant over the wide range of sputtering time. 4 figs., 17 refs. (author)

  11. Low-dose effects in the sputtering of evaporated films

    International Nuclear Information System (INIS)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.

    1983-01-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile. (author)

  12. Low-dose effects in the sputtering of evaporated films

    Energy Technology Data Exchange (ETDEWEB)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

    1983-05-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile.

  13. Sputtering of Ge(001): transition between dynamic scaling regimes

    DEFF Research Database (Denmark)

    Smilgies, D.-M.; Eng, P.J.; Landemark, E.

    1997-01-01

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two...

  14. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  15. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  16. Evolution of film temperature during magnetron sputtering

    International Nuclear Information System (INIS)

    Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

    2006-01-01

    We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

  17. Computer-controlled back scattering and sputtering-experiment using a heavy-ion-accelerator

    International Nuclear Information System (INIS)

    Becker, H.; Birnbaum, M.; Degenhardt, K.H.; Mertens, P.; Tschammer, V.

    1978-12-01

    Control and data acquisition of a PDP 11/40 computer and CAMAC instrumentation are reported for an experiment that has been developed to measure sputtering in yields and energy losses for heavy 100 - 300 keV ions in thin metal foils. Besides a quadrupole mass filter or a bending magnet, a multichannel analyser is coupled to the computer, so that also pulse height analysis can be performed under computer control. CAMAC instrumentation and measuring programs are built in a modular form to enable an easy application to other experimental problems. (orig.) 891 KBE/orig. 892 BRE

  18. Track-etched nanopores in spin-coated polycarbonate films applied as sputtering mask

    International Nuclear Information System (INIS)

    Nix, A.-K.; Gehrke, H.-G.; Krauser, J.; Trautmann, C.; Weidinger, A.; Hofsaess, H.

    2009-01-01

    Thin polycarbonate films were spin-coated on silicon substrates and subsequently irradiated with 1-GeV U ions. The ion tracks in the polymer layer were chemically etched yielding nanopores of about 40 nm diameter. In a second process, the nanoporous polymer film acted as mask for structuring the Si substrate underneath. Sputtering with 5-keV Xe ions produced surface craters of depth ∼150 nm and diameter ∼80 nm. This arrangement can be used for the fabrication of track-based nanostructures with self-aligned apertures.

  19. Sputtering measurements on JET using a multichannel visible spectrometer

    International Nuclear Information System (INIS)

    Stamp, M.F.; Morgan, P.D.; Summers, H.P.

    1989-01-01

    A multichannel visible spectrometer has been used on JET to simultaneously observe the emission from D, H, C and O atoms and ions in the proximity of a belt limiter. The absolute intensity of the line emission, along with a Langmuir probe measurement of the edge electron temperature and an atomic physics model, allows us to calculate the influxes of these species. Under steady-state conditions the influxes of D and He are the same as the effluxes, so the ratio of impurity to fuel fluxes, e.g. carbon to deuterium, is the apparent sputtering yield of deuterium on carbon in the tokamak environment. The measured flux ratio Γ c /Γ D is also indicative of the central carbon impurity concentration in JET, because the limiters are the main source of impurities. For similar particle transport, Γ c /Γ D =n c (o)/n D (o), so for a 10% flux ratio, n c /n e =6.6%, Z eff =3. (author) 7 refs., 5 figs

  20. Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nazon, J.; Sarradin, J.; Flaud, V.; Tedenac, J.C. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France); Frety, N. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

    2008-09-22

    The effects of processing parameters on the properties of tantalum nitride thin films deposited by radio frequency reactive sputtering have been investigated. The influence of the N{sub 2} partial and (Ar + N{sub 2}) total gas pressures as well as the sputtering power on the microstructure and electrical properties is reported. Rising the N{sub 2} partial pressure, from 2 to 10.7%, induces a change in the composition of the {delta}-TaN phase, from TaN to TaN{sub 1.13}. This composition change is associated with a drastic increase of the electrical resistivity over a 7.3% N{sub 2} partial pressure. The total gas pressure is revealed to strongly affect the film microstructure since a variation in both composition and grain size is observed when the gas pressure rises from 6.8 to 24.6 Pa. When the sputtering power varied between 50 and 110 W, an increase of the grain size related to a decrease of the electrical resistivity is observed.

  1. Tuning silver ion release properties in reactively sputtered Ag/TiOx nanocomposites

    Science.gov (United States)

    Xiong, J.; Ghori, M. Z.; Henkel, B.; Strunskus, T.; Schürmann, U.; Deng, M.; Kienle, L.; Faupel, F.

    2017-07-01

    Silver/titania nanocomposites with strong bactericidal effects and good biocompatibility/environmental safety show a high potential for antibacterial applications. Tailoring the silver ion release is thus highly promising to optimize the antibacterial properties of such coatings and to preserve biocompatibility. Reactive sputtering is a fast and versatile method for the preparation of such Ag/TiOx nanocomposites coatings. The present work is concerned with the influence of sputter parameters on the surface morphology and silver ion release properties of reactively sputtered Ag/TiOx nanocomposites coatings showing a silver nanoparticle size distribution in the range from 1 to 20 nm. It is shown that the silver ion release rate strongly depends on the total pressure: the coatings prepared at lower pressure present a lower but long-lasting release behavior. The much denser structure produced under these conditions reduces the transport of water molecules into the coating. In addition, the influence of microstructure and thickness of titanium oxide barriers on the silver ion release were investigated intensively. Moreover, for the coatings prepared at high total pressure, it was demonstrated that stable and long-lasting silver release can be achieved by depositing a barrier with a high rate. Nanocomposites produced under these conditions show well controllable silver ion release properties for applications as antibacterial coatings.

  2. Correlação linear e espacial entre a produtividade de forragem, a porosidade total e a densidade do solo de Pereira Barreto (SP Linear and spatial correlations between forage yield, total porosity and bulk density in Pereira Barreto, Brazil

    Directory of Open Access Journals (Sweden)

    Cesar Gustavo da Rocha Lima

    2007-12-01

    , plant attributes were analyzed in an irrigated fall corn crop under no-tillage besides some soil characteristics (total porosity-TP and bulk density-BD, in a Haplic Acrustox on the Fazenda Bonança (Dahma Agricultural Company in Pereira Barreto County, Sao Paulo State, Brazil (20 ° 40 ' 12 '' latitude S; 51 ° 01 '50 '' longitude W. The purpose of the study was to evaluate the variability, and linear and spatial correlations among the attributes (plant and soil in order to identify an indicator of soil physical quality for corn forage productivity (CPF . A geostatistical grid was installed to collect soil and plant data, with 125 sample points, over an area of 2.500 m². The studied attributes did not vary randomly and the variability was medium to low, with well defined patterns. The spatial range varied between 6.8 and 23.7 m. On the other hand, the linear correlations between the CPF with the soil attributes (TP and BD were low due to the high data number. BD1 and TP1 were best correlated with the CPF. However, concerning the spatial variability, the inverse correlations between CPF and BD1, as well as between BD1 and TP1 were excellent. The BD1 increased (1.45-1.64 kg dm-3 when the CPF varied from 11.653 to14.552 kg ha-1. At the sites where bulk density decreased (1.35-1.45 kg dm-3 the CPF varied from 14.552 to17.450 kg ha-1. Thus, the bulk density in the 0-0.10 m soil layer proved to be a satisfactory index of the soil physical quality regarding forage yield of fall corn.

  3. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  4. Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

    Science.gov (United States)

    Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

    2018-05-01

    Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

  5. Total protein

    Science.gov (United States)

    ... page: //medlineplus.gov/ency/article/003483.htm Total protein To use the sharing features on this page, please enable JavaScript. The total protein test measures the total amount of two classes ...

  6. Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

    International Nuclear Information System (INIS)

    Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; Gessert, Timothy A.

    2016-01-01

    The authors demonstrate mobilities of >45 cm 2 /V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2 , instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2 O 3 content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO 2 . The addition of ZrO 2 yielded the highest mobilities at >55 cm 2 /V s and the films showed a modest increase in optical transmission with increasing Zr-content

  7. Breeding for Grass Seed Yield

    DEFF Research Database (Denmark)

    Boelt, Birte; Studer, Bruno

    2010-01-01

    Seed yield is a trait of major interest for many fodder and amenity grass species and has received increasing attention since seed multiplication is economically relevant for novel grass cultivars to compete in the commercial market. Although seed yield is a complex trait and affected...... by agricultural practices as well as environmental factors, traits related to seed production reveal considerable genetic variation, prerequisite for improvement by direct or indirect selection. This chapter first reports on the biological and physiological basics of the grass reproduction system, then highlights...... important aspects and components affecting the seed yield potential and the agronomic and environmental aspects affecting the utilization and realization of the seed yield potential. Finally, it discusses the potential of plant breeding to sustainably improve total seed yield in fodder and amenity grasses....

  8. Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

    International Nuclear Information System (INIS)

    Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

    2003-01-01

    Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

  9. Reactive dual magnetron sputtering for large area application

    International Nuclear Information System (INIS)

    Struempfel, J.

    2002-01-01

    Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

  10. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    Science.gov (United States)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  11. Laser micromachining of sputtered DLC films

    International Nuclear Information System (INIS)

    Fu, Y.Q.; Luo, J.K.; Flewitt, A.J.; Ong, S.E.; Zhang, S.; Milne, W.I.

    2006-01-01

    DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp 2 /sp 3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF 6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details

  12. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  13. Fuzzy tungsten in a magnetron sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Petty, T.J., E-mail: tjpetty@liv.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom); Khan, A. [Pariser Building-G11, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL (United Kingdom); Heil, T. [NiCaL, Block C Waterhouse Building, 1-3 Brownlow Street, Liverpool, L69 3GL (United Kingdom); Bradley, J.W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

    2016-11-15

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10{sup 23}–3.0 × 10{sup 24} m{sup −2}, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10{sup 24} m{sup −2}, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ{sup 1/2} relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  14. Fuzzy tungsten in a magnetron sputtering device

    International Nuclear Information System (INIS)

    Petty, T.J.; Khan, A.; Heil, T.; Bradley, J.W.

    2016-01-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10 23 –3.0 × 10 24  m −2 , the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10 24  m −2 , and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ 1/2 relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  15. Asymmetric total synthesis of cladosporin and isocladosporin.

    Science.gov (United States)

    Zheng, Huaiji; Zhao, Changgui; Fang, Bowen; Jing, Peng; Yang, Juan; Xie, Xingang; She, Xuegong

    2012-07-06

    The first asymmetric total syntheses of cladosporin and isocladosporin were accomplished in 8 steps with 8% overall yield and 10 steps with 26% overall yield, respectively. The relative configuration of isocladosporin was determined via this total synthesis.

  16. Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

    International Nuclear Information System (INIS)

    Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

    2015-01-01

    We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

  17. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  18. Transient effects in SIMS analysis of Si with Cs sup + at high incidence angles Secondary ion yield variations

    CERN Document Server

    Heide, P A W

    2002-01-01

    Secondary ion mass spectrometry (SIMS) depth profile analysis of Si wafers using 1 keV Cs sup + primary ions at large incidence angles (80 deg. ) is plagued by unusually strong transient effects (variations in both sputter and ion yields). Analysis of a native oxide terminated Si wafer with and without the aid of an O sub 2 leak, and an Ar sup + pre-sputtered wafer revealed correlations between the implanted Cs content and various secondary ion intensities consistent with that expected from a resonance charge transfer process (that assumed by the electron tunneling model). Cs concentrations were defined through X-ray photoelectron spectroscopy of the sputtered surface from SIMS profiles terminated within the transient region. These scaled with the surface roughening occurring under these conditions and can be explained as resulting from the associated drop in sputter rates. An O induced transient effect from the native oxide was also identified. Characterization of these effects allowed the reconstruction of ...

  19. Effect of Wall Material on H– Production in a Plasma Sputter-Type Ion Source

    Directory of Open Access Journals (Sweden)

    Y. D. M. Ponce

    2004-12-01

    Full Text Available The effect of wall material on negative hydrogen ion (H– production was investigated in a multicusp plasma sputter-type ion source (PSTIS. Steady-state cesium-seeded hydrogen plasma was generated by a tungsten filament, while H– was produced through surface production using a molybdenum sputter target. Plasma parameters and H– yields were determined from Langmuir probe and Faraday cup measurements, respectively. At an input hydrogen pressure of 1.2 mTorr and optimum plasma discharge parameters Vd = –90 V and Id = –2.25 A, the plasma parameters ne was highest and T–e was lowest as determined from Langmuir probe measurements. At these conditions, aluminum generates the highest ion current density of 0.01697 mA/cm2, which is 64% more than the 0.01085 mA/cm2 that stainless steel produces. The yield of copper, meanwhile, falls between the two materials at 0.01164 mA/cm2. The beam is maximum at Vt = –125 V. Focusing is achieved at VL = –70 V for stainless steel, Vt = –60 V for aluminum, and Vt = –50 V for copper. The results demonstrate that proper selection of wall material can greatly enhance the H– production of the PSTIS.

  20. Total algorithms

    NARCIS (Netherlands)

    Tel, G.

    We define the notion of total algorithms for networks of processes. A total algorithm enforces that a "decision" is taken by a subset of the processes, and that participation of all processes is required to reach this decision. Total algorithms are an important building block in the design of

  1. On the microstructure and interfacial properties of sputtered nickel ...

    Indian Academy of Sciences (India)

    Administrator

    On the microstructure and interfacial properties of sputtered nickel ... (FE-SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for ..... compound phase formation by performing the deposition.

  2. Sputter-Resistant Materials for Electric Propulsion, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase 2 project shall develop sputter-resistant materials for use in electric propulsion test facilities and for plume shields on spacecraft using electric...

  3. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  4. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  5. Antibacterial properties of palladium nanostructures sputtered on polyethylene naphthalate

    Czech Academy of Sciences Publication Activity Database

    Polívková, M.; Válová, M.; Siegel, J.; Rimpelová, S.; Hubáček, Tomáš; Lyutakov, O.; Švorčík, V.

    2015-01-01

    Roč. 5, č. 90 (2015), s. 73767-73774 ISSN 2046-2069 Institutional support: RVO:60077344 Keywords : polymer * palladium sputtering * annealing * nanostructure * antibacterial effect Subject RIV: JJ - Other Materials Impact factor: 3.289, year: 2015

  6. Sputtering of nano-grains by energetic ions

    CERN Document Server

    Bringa, E M

    2002-01-01

    Sputtering from grains with a size of tens of nanometers is important in a number of astrophysical environments having a variety of plasma properties and can have applications in nano-technology. Since energy deposition by incident ions or electrons can create 'hot' regions in a small grain, thermal spike (TS) models have been applied to estimate the sputtering. The excitations produced by a fast ion are often assumed to form a 'hot' cylindrical track. In this paper we use molecular dynamics (MD) calculations to describe the energy transport and sputtering due to the creation of a 'hot' track in a grain with one quarter million atoms. We show the enhancement due to grain size and find that TS models work over a limited range of excitation densities. Discrepancies of several orders of magnitude are found when comparing our MD results for sputtering of small dust grains to those obtained by the astrophysical community using spike models.

  7. Nanopatterning of swinging substrates by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

    2016-05-28

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  8. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  9. Electronic sputtering of biomolecules and its application in mass spectrometry

    International Nuclear Information System (INIS)

    Haakansson, P.; Sundqvist, B.U.R.

    1989-01-01

    In 1974 Macfarlane discovered that fast heavy ions from a 252-Cf source can desorb and ionize molecules from a solid surface. The mass of the molecules was determined by time-of-flight technique. It has been shown that the desorption mechanism is associated with the electron part of the stopping power of the primary ion and the name 'electron sputtering' has been adopted for the phenomenon to distinguish it from the well-known sputtering process with ions of KeV energy. A review of electronic sputtering of biomolecules will be given as well as recent measurements on Langmuir-Blodgett films. One important application of electronic sputtering is in the field of mass spectrometry. With this technique large and nonvolatile molecules can be studied. Particularly adsorption of biomolecules to a nitrocellulose backing has proven to be very useful. Examples will be given of mass spectra from peptides with a molecular weight above 20,000 u. (author)

  10. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  11. Sputtering mechanisms of polycrystalline platinum by low energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    1999-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  12. Nanopatterning of swinging substrates by ion-beam sputtering

    International Nuclear Information System (INIS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-01-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  13. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  14. Interaction of energetic particles with polymer surfaces: surface morphology development and sputtered polymer-fragment ion analysis

    International Nuclear Information System (INIS)

    Michael, R.S.

    1987-01-01

    The core of this thesis is based on a series of papers that have been published or will soon be published in which the various processes taking place in the energetic particle-polymer surface interaction scene is investigated. Results presented show different developments on polymer surfaces when compared to the vast experimental data on energetic particle-metal surface interactions. The surface morphology development depends on the physical characteristics of the polymer. Sputtering yields of fluoropolymers were several orders higher than the sputtering yields of aliphatic and aromatic polymers. Depending on the chemical nature of the polymer, the surface morphology development was dependent upon the extent of radiation-damage accumulation. Fast Atom Bombardment Mass Spectrometry at low and high resolution was applied to the characterization of sputtered polymer fragment ions. Fragment ions and their intensities were used to identify polymer samples, observe radiation damage accumulation and probe polymer-polymer interface of a polymer-polymer sandwich structure. A model was proposed which attempts to explain the nature of processes involved in the energetic particle-polymer surface interaction region

  15. Secondary ion formation during electronic and nuclear sputtering of germanium

    Science.gov (United States)

    Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

    2018-06-01

    Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

  16. Molecular dynamics simulation of chemical sputtering of hydrogen atom on layer structured graphite

    International Nuclear Information System (INIS)

    Ito, A.; Wang, Y.; Irle, S.; Morokuma, K.; Nakamura, H.

    2008-10-01

    Chemical sputtering of hydrogen atom on graphite was simulated using molecular dynamics. Especially, the layer structure of the graphite was maintained by interlayer intermolecular interaction. Three kinds of graphite surfaces, flat (0 0 0 1) surface, armchair (1 1 2-bar 0) surface and zigzag (1 0 1-bar 0) surface, are dealt with as targets of hydrogen atom bombardment. In the case of the flat surface, graphene layers were peeled off one by one and yielded molecules had chain structures. On the other hand, C 2 H 2 and H 2 are dominant yielded molecules on the armchair and zigzag surfaces, respectively. In addition, the interaction of a single hydrogen isotope on a single graphene is investigated. Adsorption, reflection and penetration rates are obtained as functions of incident energy and explain hydrogen retention on layered graphite. (author)

  17. TiCx thin films coatings prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Saoula, N.; Handa, K.; Kesri, R.

    2004-01-01

    demonstrate clearly the great influence of the variation of different parameters (deposition time, RF power, total pressure, gas mixture (Ar+CH 4 ) on the film growth rates and thickness. The aim of present work is to study their influence of gas mixture, more specifically of carbon content on the structure, composition and the hardness of TiC coatings, prepared using an RF sputtering system

  18. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  19. Hot zirconium cathode sputtered layers for useful surface modification

    International Nuclear Information System (INIS)

    Duckworth, R.G.

    1986-01-01

    It has been found that multilayer zirconium based sputtered coatings can greatly improve the wear properties of a wide variety of mechanical components, machine tools, and metal surfaces. Although a hot (approximately 1000 0 C) cathode is employed, temperature sensitive components can be beneficially treated, and for precision parts a total coating thickness of only 0.5μm is often perfectly effective. Even at the highest coating rates substrate temperatures are below 300 0 C. For the corrosion protection of less well finished surfaces thicker layers are usually required and it is important that relatively stress free layers are produced. The authors employed a variety of tailored zirconium/zirconium nitride/zirconium oxide mixed layers to solve a number of tribological problems for some 5 or 6 years. However, it is only recently that they designed, built, and commissioned rapid cycle, multiple cathode, load-lock plant for economic production of such coatings. This paper provides an introduction to this method of depositing pure zirconium and pure synthetic zirconium nitride films

  20. Structure and oxygen incorporation in low pressure sputtered YBCO films

    International Nuclear Information System (INIS)

    Chaudhary, S.; Pandya, D. K.; Kashyap, S. C.

    2002-01-01

    Thin films of YBa 2 Cu 3 O 7- δ (YBCO) have been successfully grown by reactive RF-magnetron sputtering technique at low pressure. The oxygen partial pressure of 0.95 mTorr, a total pressure (argon and oxygen) of 1.9 mTorr, and a substrate temperature of 775 grad C resulted in good quality films with T C (R=0) = 85.3 K and J Cmag (4.2 K) ≅ 2x10 7 A/cm 2 . The incorporation of oxygen in the as-grown films has been controlled by using different ambient - oxygen, air or argon during in-situ cooling. The superconducting behaviour of the films was studied using resistance-temperature and low field ac-susceptibility measurements and correlated with their structure. All the films exhibited metallic conduction in the normal state. The oxygen- and air- cooled films were superconducting, possessing the usual orthorhombic structure. The argon-cooled films were non-superconducting possessing the tetragonal structure, thus implying that the structure of the film during deposition is tetragonal which transforms to either of the oxygen rich orthorhombic-I or -II phases depending upon the oxygen/air ambient. The 'δ' values of 0.14, 0.32 and 0.70 and higher 'c'-parameters of 1.1785, 1.180 and 1.183 nm have been obtained for oxygen, air and argon cooled films respectively. (Authors)

  1. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  2. Sputtering analysis of silicates by XY-TOF-SIMS: Astrophysical applications

    Science.gov (United States)

    Martinez, Rafael; Langlinay, Thomas; Ponciano, Cassia; da Silveira, Enio F.; Palumbo, Maria Elisabetta; Strazzulla, Giovanni; Brucato, John R.; Hijazi, Hussein; Boduch, Philippe; Cassimi, Amine; Domaracka, Alicja; Ropars, Frédéric; Rothard, Hermann

    2015-08-01

    Silicates are the dominant material of many objects in the Solar System, e.g. asteroids, the Moon, the planet Mercury and meteorites. Ion bombardment by cosmic rays and solar wind may alter the reflectance spectra of irradiated silicates by inducing physico-chemical changes known as “space weathering”. Furthermore, sputtered particles contribute to the composition of the exosphere of planets or moons. Mercury’s complex particle environment surrounding the planet is composed by thermal and directional neutral atoms (exosphere) originating via surface release and charge-exchange processes, and by ionized particles originated through photo-ionization and again by surface release processes such as ion induced sputtering.As a laboratory approach to understand the evolution of the silicate surfaces and the Na vapor (as well as, in lower concentration, K and Ca) discovered on the solar facing side of Mercury, we measured sputtering yields, velocity spectra and angular distributions of secondary ions from terrestrial silicate analogs. Experiments were performed using highly charged MeV/u and keV/u ions at GANIL in a new UHV set-up (under well controlled surface conditions) [1]. Other experiments were conducted at the Pontifical Catholic University of Rio de Janeiro (PUC-Rio) by using Cf fission fragments (~ 1 MeV/u). Nepheline, an aluminosilicate containing Na and K, evaporated on Si substrates (wafers) was used as model for silicates present in Solar System objects. Production yields, measured as a function of the projectile fluence, allow to study the possible surface stoichiometry changes during irradiation. In addition, from the energy distributions N(E) of sputtered particles it is possible to estimate the fraction of particles that can escape from the gravitational field of Mercury, and those that fall back to the surface and contribute to populate the atmosphere (exosphere) of the planet.The CAPES-COFECUB French-Brazilian exchange program, a CNPq postdoctoral

  3. Verification of the sputter-generated 32SFn- (n = 1-6) anions by accelerator mass spectrometry

    Science.gov (United States)

    Mane, R. G.; Surendran, P.; Kumar, Sanjay; Nair, J. P.; Yadav, M. L.; Hemalatha, M.; Thomas, R. G.; Mahata, K.; Kailas, S.; Gupta, A. K.

    2016-01-01

    Recently, we have performed systematic Secondary Ion Mass Spectrometry (SIMS) measurements at our ion source test set up and have demonstrated that gas phase 32SFn- (n = 1-6) anions for all size 'n' can be readily generated from a variety of surfaces undergoing Cs+ ion sputtering in the presence of high purity SF6 gas by employing the gas spray-cesium sputter technique. In our SIMS measurements, the isotopic yield ratio 34SFn-/32SFn- (n = 1-6) was found to be close to its natural abundance but not for all size 'n'. In order to gain further insight into the constituents of these molecular anions, ultra sensitive Accelerator Mass Spectrometry (AMS) measurements were conducted with the most abundant 32SFn- (n = 1-6) anions, at BARC-TIFR 14 UD Pelletron accelerator. The results from these measurements are discussed in this paper.

  4. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  5. Totally James

    Science.gov (United States)

    Owens, Tom

    2006-01-01

    This article presents an interview with James Howe, author of "The Misfits" and "Totally Joe". In this interview, Howe discusses tolerance, diversity and the parallels between his own life and his literature. Howe's four books in addition to "The Misfits" and "Totally Joe" and his list of recommended books with lesbian, gay, bisexual, transgender,…

  6. nduced hyperlipidemic rats. Methods: Column chromatographic fractionation of butanol fraction of total methanol extract of leaves of Bauhinia variegata (Linn. yields four sub-fractions (sub-fraction A-D. All sub-fractions tested for their anti-hyperlipidemic activity. Sub-fractions administered at a dose of 65 mg/kg (oral to the Triton WR-1339 induced hyperlipidemic rats and total cholesterol, triglycerides, HDL, LDL and VLDL

    Directory of Open Access Journals (Sweden)

    Deepak Kumar

    2012-10-01

    Full Text Available Objective: To investigate the effect and evaluation of Anti-hyperlipidemic activity guided subfraction isolated from total methanolic extract of Bauhinia variegata (Linn. leaves on Triton WR-1339 induced hyperlipidemic rats. Methods: Column chromatographic fractionation of butanol fraction of total methanol extract of leaves of Bauhinia variegata (Linn. yields four subfractions (sub-fraction A-D. All sub-fractions tested for their anti-hyperlipidemic activity. Subfractions administered at a dose of 65 mg/kg (oral to the Triton WR-1339 induced hyperlipidemic rats and total cholesterol, triglycerides, HDL, LDL and VLDL level in the blood were checked. Results: Sub-fraction D showed significant reduction (P<0.05 among four sub-fraction in comparison with standard drug fenofibrate. Conclusions: From the above study it could be concluded that butanol sub-fraction D of Bauhinia variegata (Linn. not only have resulted in significant reduction in cholesterol, triglyceride, LDL, VLDL level but also increases the HDL level at a reduced dose level.

  7. Yield Potential of Hemp (Cannabis sativa L.) Cultivars in Denmark

    DEFF Research Database (Denmark)

    Deleuran, Lise Christina; Flengmark, Poul Kristiansen

    2005-01-01

    In order to determine the yield potential of fibre hemp in Denmark, defined as seed yield, biomass, stem and fibre production, five cultivars were evaluated in field trials at two sites during 1998-2000. The total dry matter yield, stem yield, fibre yield, fibre percent, plant height, and seed...

  8. Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

    Directory of Open Access Journals (Sweden)

    Till Jurgeleit

    2017-10-01

    Full Text Available Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ

  9. Formulae for the secondary electron yield and total stopping power ...

    Indian Academy of Sciences (India)

    2Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-gil, ..... sample preparation techniques can lead to different ... talline orientation, contamination or submonolayer on the surface of foreign species; a.

  10. Contribution of backscattered electrons to the total electron yield ...

    Indian Academy of Sciences (India)

    a better fit to the experiment compared to the power-law. Keywords ... is based on many different mechanisms, for example, ion-induced secondary elec- ... modified these theories using a Lindhard power potential formalism to describe SE ..... principle. The constant-loss indicates the importance of straggling of the primaries.

  11. Fisheries have become characterized by declining total yields and ...

    African Journals Online (AJOL)

    spamer

    Marine Resources Task Group (1997) and Cochrane et al. ... South Africa is discussed along with the challenges ... co-management arrangements is presented that postulates the factors most important for their ... increasingly by governments of coastal nations to try ..... within the regional Fisheries Management Councils.

  12. 6 Grain Yield

    African Journals Online (AJOL)

    create a favourable environment for rice ... developing lines adaptable to many ... have stable, not too short crop duration with ..... Analysis of variance of the effect of site and season on maturity, grain yield and plant ..... and yield components.

  13. Contribution to the study of sputtering and damage of uranium dioxide by fast heavy ions; Contribution a l'etude de la pulverisation et de l'endommagement du dioxyde d'uranium par les ions lourds rapides

    Energy Technology Data Exchange (ETDEWEB)

    Schlutig, S

    2001-03-01

    Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO{sub 2} targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models proposed in the literature and it seems that the supersonic gas flow model is well suited to describe our results. Finally, the sputtering yields are compared with a set of earlier experimental data on uranium dioxide damage obtained by T. Wiss and we observe that only a small fraction of UO{sub 2} monolayers are sputtered. (author)

  14. The corrosion and passivity of sputtered Mg–Ti alloys

    International Nuclear Information System (INIS)

    Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2016-01-01

    Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  15. Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

    Science.gov (United States)

    Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

    2016-08-01

    Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. © 2015 Wiley Periodicals, Inc.

  16. Rhodium-coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; Temmermann, G. de; Oelhafen, P.; Mathys, D.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for plasma diagnostics that will be used in ITER. Any change in the mirror performance, in particular its reflectivity, will influence the quality and reliability of detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium may be a good candidate material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different relevant substrates (Mo, Stainless Steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness, crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch test results demonstrate that adhesion properties increase with the substrate hardness. The detailed optical characterizations of Rh coated mirrors as well as the results of erosion tests performed both under laboratory conditions and in TEXTOR will be presented in this paper. (orig.)

  17. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  18. Yield stress fluids slowly yield to analysis

    NARCIS (Netherlands)

    Bonn, D.; Denn, M.M.

    2009-01-01

    We are surrounded in everyday life by yield stress fluids: materials that behave as solids under small stresses but flow like liquids beyond a critical stress. For example, paint must flow under the brush, but remain fixed in a vertical film despite the force of gravity. Food products (such as

  19. Improvements in or relating to methods of and apparatus for coating wire, rod or strip material by sputtering

    International Nuclear Information System (INIS)

    Wareing, J.B.

    1976-01-01

    A method and apparatus are described for coating wire, rod or strip material comprising first subjecting the material to electron bombardment in a glow discharge to heat and activate the surface and then subjecting it to sputtering by use of a soft cathode discharge. The apparatus comprises a low pressure gas chamber through which the material is passed, and containing a glow discharge electron gun having a tubular cathode shaped so that the material can be passed axially through it, and an anode surrounding the cathode. The cathode is formed in two parts, the first part at one end, being made of material of low sputtering yield, and the second part being formed at least partially of the required coating material. The first part of the cathode may be of stainless steel or Al. The two parts of the cathode are electrically isolated with means provided for applying a lower negative potential, with respect to the anode, to the second part compared with the first part. The voltage applied to the second part may be controlled so as to control the sputtering rate. The gas pressure in the chamber is also controllable. The coating material may be arranged as inserts in the fixed cathode structure or as segments around the surface to be coated, and may be composed of Pb, Zn or Cu. (U.K.)

  20. Recent advancements in sputter-type heavy negative ion sources

    International Nuclear Information System (INIS)

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few μA to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab

  1. Angular distributions of sputtered particles from NiTi alloy

    International Nuclear Information System (INIS)

    Neshev, I.; Hamishkeev, V.; Chernysh, V.S.; Postnikov, S.; Mamaev, B.

    1993-01-01

    The angular distributions of sputtered Ni and Ti from a polycrystalline NiTi (50-50%) alloy are investigated by Auger electron spectroscopy and Rutherford backscattering spectroscopy. A difference in the angular distributions is observed with Ni being sputtered preferentially near the surface normal. A computer program for the calculation of the angular distributions of constituents sputtered from binary targets is created and used. The mechanisms responsible for the observed differences in the angular distributions are discussed. It is found that the collisional cascade theory is not directly applicable to the results of the constituents' angular distributions obtained in the presence of oxygen. The fitted coefficients of bombardment-induced segregation are found to be greater than the experimentally obtained ones. (author)

  2. Development of methodics for the characterization of the composition of the ion-collision-induced secondary-particle flux by comparison of the yield contributions of photoinduced ion formation processes

    International Nuclear Information System (INIS)

    Vering, Guido

    2008-01-01

    The aim of this work was to develop a method to distinguish between different ion formation processes and to determine the influence of these processes on the total number of detected monatomic ions of a certain element. A vector/matrix-formalism was developed, which describes the physical processes of sputtering, ion formation, mass separation and detection in laser-SNMS. In the framework of the method developed, based on this theoretic formalism, changes in the secondary flux contribution of the respective element were observed by comparing the detected monatomic ion yield obtained in specifically aligned (SIMS and) laser-SNMS experiments. The yields resulting from these experiments were used to calculate characteristic numbers to compare the flux composition from different surfaces. The potential of the method was demonstrated for the elements boron, iron and gadolinium by investigating the changes in the flux composition of secondary particles sputtered from metallic surfaces, as a function of the oxygen concentration at the surface. Finally, combined laser-SNMS depth profiles and images, obtained with both laser systems, were presented to demonstrate how the parallel detection of the three differently originated ion signals of the same element can be used to get additional information about the composition of the flux of secondary particles synchronously during the analysis of elemental distributions. In this respect the presented method can be a very helpful tool to prevent misleading interpretations of SIMS or laser-SNMS data. (orig.)

  3. Depth of origin of atoms sputtered from crystalline targets

    International Nuclear Information System (INIS)

    Shapiro, M.H.; Trovato, E.; Tombrello, T.A.

    2001-01-01

    Recently, V.I. Shulga and W. Eckstein (Nucl. Instr. and Meth. B 145 (1998) 492) investigated the depth of origin of atoms sputtered from random elemental targets using the Monte Carlo code TRIM.SP and the lattice code OKSANA. They found that the mean depth of origin is proportional to N -0.86 , where N is the atomic density; and that the most probable escape depth is ∼λ 0 /2, where λ 0 is the mean atomic distance. Since earlier molecular dynamics simulations with small crystalline elemental targets typically produced a most probable escape depth of zero (i.e., most sputtered atoms came from the topmost layer of the target), we have carried out new molecular dynamics simulations of sputtered atom escape depths with much larger crystalline targets. Our new results, which include the bcc targets Cs, Rb and W, as well as the fcc targets Cu and Au predict that the majority of sputtered atoms come from the first atomic layer for the bcc(1 0 0), bcc(1 1 1), fcc(1 0 0) and fcc(1 1 1) targets studied. For the high-atomic density targets Cu, Au and W, the mean depth of origin of sputtered atoms typically is less than 0.25λ 0 . For the low-atomic density targets Cs and Rb, the mean depth of origin of sputtered atoms is considerably larger, and depends strongly on the crystal orientation. We show that the discrepancy between the single-crystal and amorphous target depth of origin values can be resolved by applying a simple correction to the single-crystal results

  4. Arc generation from sputtering plasma-dielectric inclusion interactions

    International Nuclear Information System (INIS)

    Wickersham, C.E. Jr.; Poole, J.E.; Fan, J.S.

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al 2 O 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λ d , is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λ d and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

  5. Bond yield curve construction

    Directory of Open Access Journals (Sweden)

    Kožul Nataša

    2014-01-01

    Full Text Available In the broadest sense, yield curve indicates the market's view of the evolution of interest rates over time. However, given that cost of borrowing it closely linked to creditworthiness (ability to repay, different yield curves will apply to different currencies, market sectors, or even individual issuers. As government borrowing is indicative of interest rate levels available to other market players in a particular country, and considering that bond issuance still remains the dominant form of sovereign debt, this paper describes yield curve construction using bonds. The relationship between zero-coupon yield, par yield and yield to maturity is given and their usage in determining curve discount factors is described. Their usage in deriving forward rates and pricing related derivative instruments is also discussed.

  6. Measurements of fission yields

    International Nuclear Information System (INIS)

    Denschlag, H.O.

    2000-01-01

    After some historical introductory remarks on the discovery of nuclear fission and early fission yield determinations, the present status of knowledge on fission yields is briefly reviewed. Practical and fundamental reasons motivating the pursuit of fission yield measurements in the coming century are pointed out. Recent results and novel techniques are described that promise to provide new interesting insights into the fission process during the next century. (author)

  7. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  8. Mechanical and structural properties of sputtered Ni/Ti multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Senthil Kumar, M.; Boeni, P.; Tixier, S.; Clemens, D.; Horisberger, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Ni/Ti bilayers have been prepared by dc-magnetron sputtering in order to study their mechanical and structural properties. A remarkable reduction of stress is observed when the Ni layers are sputtered reactively in argon with a high partial pressure of air. The high angle x-ray diffraction studies show a tendency towards amorphisation of the Ni layers with increasing air flow. The low angle measurements indicate a substantial reduction of interdiffusion resulting in smoother interfaces with increasing air content. (author) 2 figs., 2 refs.

  9. High power impulse magnetron sputtering and its applications

    Science.gov (United States)

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  10. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  13. Highly aligned carbon nanotube arrays fabricated by bias sputtering

    International Nuclear Information System (INIS)

    Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system

  14. Development of surface relief on polycrystalline metals due to sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Voitsenya, V.S. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (Germany); Bardamid, A.F. [Taras Shevchenko National University, 01033 Kiev (Ukraine); Bondarenko, V.N. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Davis, J.W., E-mail: jwdavis@starfire.utias.utoronto.ca [University of Toronto Institute for Aerospace Studies, 4925 Dufferin St., Toronto, ON, Canada M3H5T6 (Canada); Konovalov, V.G.; Ryzhkov, I.V.; Skoryk, O.O.; Solodovchenko, S.I. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Zhang-jian, Zhou [University of Science and Technology Beijing, Beijing 100 083 (China)

    2013-05-01

    The characteristics of surface microrelief that appear in sputtering experiments with polycrystalline metals of various grain sizes have been studied. Specimens with grain sizes varying from 30–70 nm in the case of crystallized amorphous alloys, to 1–3 μm for technical tungsten grade and 10–100 μm for recrystallized tungsten were investigated. A model is proposed for the development of roughness on polycrystalline metals which is based on the dependence of sputtering rate on crystal orientation. The results of the modeling are in good agreement with experiments showing that the length scale of roughness is much larger than the grain size.

  15. Fission product yields

    International Nuclear Information System (INIS)

    Valenta, V.; Hep, J.

    1978-01-01

    Data are summed up necessary for determining the yields of individual fission products from different fissionable nuclides. Fractional independent yields, cumulative and isobaric yields are presented here for the thermal fission of 235 U, 239 Pu, 241 Pu and for fast fission (approximately 1 MeV) of 235 U, 238 U, 239 Pu, 241 Pu; these values are included into the 5th version of the YIELDS library, supplementing the BIBFP library. A comparison is made of experimental data and possible improvements of calculational methods are suggested. (author)

  16. Influence of R.F. sputter parameters on the magnetic orientation of Co-Cr layers

    NARCIS (Netherlands)

    Lodder, J.C.; Wielinga, T.

    1984-01-01

    Co-Cr layers for the perpendicular recording mode were deposited by means of RF-sputtering. The most important sputter parameters, i.e. the RF sputter high voltage VRF, the argon pressure Par and the substrate holder temperature Tsh, gave an optimum value for perpendicular orientation of the

  17. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx

  18. Crystal orientation and sample preparation effects on sputtering and lattice damage in 100 keV self-irradiated copper

    International Nuclear Information System (INIS)

    Sprague, J.A.; Malmberg, P.R.; Reynolds, G.W.; Lambert, J.M.; Treado, P.A.; Vincenz, A.M.

    1987-01-01

    Sputtering yields and angular distributions have been measured as functions of sample preparation techniques and incident ion-beam orientation with respect to the crystal axes for 100 keV Cu-ion beams on Cu crystals and polycrystalline samples. The angular distributions have structure requiring an nth order cosine with two Gaussians superimposed to fit the data; strong peaking is observed near the backscatter direction. The yield is dependent on the beam to crystal and beam to polycrystalline-rod axis orientation, on the grain size of the polycrystals and on sample-preparation techniques. Yield measurements vary by as much as a factor of 4. Lattice-damage differences, measured with alpha particle channeling, are much smaller and seem to be saturated by fluences of the order of 1x10 16 /cm 2 . (orig.)

  19. Characterization of YBaCuO films deposited by the sputtering method using a temple-bell-type substrate holder

    International Nuclear Information System (INIS)

    Kajikawa, H.; Fukumoto, Y.; Shibutani, K.; Hayashi, S.; Ishibashi, K.; Inoue, K.

    1992-01-01

    The as-grown YBaCuO films deposited by the off-axis sputtering method using a temple-bell type substrate holder showed a good crystalline quality with a minimum yield value x min of 0.9 MeV He ions of 3.8%. The post-annealing degraded the crystalline quality to increase x min up to 11.8%, though it improved both the T c and J c . It was supposed that the degradation was caused by the re-arrangement of oxygen atoms. (orig.)

  20. Characterization of aluminum/aluminum nitride coatings sputter deposited using the pulsed-gas process

    International Nuclear Information System (INIS)

    Springer, R.W.; Hosford, C.D.

    1981-01-01

    A dc triode magnetron has been used to produce freestanding Al/Al + AlN lamellar foils by sputter deposition. The 5-μm-thick foils produced on both flat substrates as well as curved substrates exhibited good specularity as well as excellent mechanical properties. The pulse spacing was varied from none to 100-nm spacing. The yield strength of the material was found to obey the Hall-Petch relation sigma/sub ys/ = 230 + .07/d/sup 1/2/, where sigma/sub ys/ is in MPa. Auger electron Spectroscopy and Secondary Ion Mass Spectroscopy indicate that the large flow stress of 230 MPa must be due to grain refinement of the extended source and not an impurity effect. The result is that limitations of masking found in uniaxial flux sources for curved surfaces can be removed allowing the high quality coating of more general shapes

  1. Investigating the Fundamentals of Molecular Depth Profiling Using Strong-field Photoionization of Sputtered Neutrals

    Science.gov (United States)

    Willingham, D.; Brenes, D. A.; Winograd, N.; Wucher, A.

    2010-01-01

    Molecular depth profiles of model organic thin films were performed using a 40 keV C60+ cluster ion source in concert with TOF-SIMS. Strong-field photoionization of intact neutral molecules sputtered by 40 keV C60+ primary ions was used to analyze changes in the chemical environment of the guanine thin films as a function of ion fluence. Direct comparison of the secondary ion and neutral components of the molecular depth profiles yields valuable information about chemical damage accumulation as well as changes in the molecular ionization probability. An analytical protocol based on the erosion dynamics model is developed and evaluated using guanine and trehalose molecular secondary ion signals with and without comparable laser photoionization data. PMID:26269660

  2. Molecular dynamics simulations of sputtering of organic overlayers by slow, large clusters

    International Nuclear Information System (INIS)

    Rzeznik, L.; Czerwinski, B.; Garrison, B.J.; Winograd, N.; Postawa, Z.

    2008-01-01

    The ion-stimulated desorption of organic molecules by impact of large and slow clusters is examined using molecular dynamics (MDs) computer simulations. The investigated system, represented by a monolayer of benzene deposited on Ag{1 1 1}, is irradiated with projectiles composed of thousands of noble gas atoms having a kinetic energy of 0.1-20 eV/atom. The sputtering yield of molecular species and the kinetic energy distributions are analyzed and compared to the results obtain for PS4 overlayer. The simulations demonstrate quite clearly that the physics of ejection by large and slow clusters is distinct from the ejection events stimulated by the popular SIMS clusters, like C 60 , Au 3 and SF 5 at tens of keV energies.

  3. Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

    2015-12-01

    Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

  4. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  5. Transmission sputtering of gold thin-films by low-energy (< 1 keV) xenon ions: I. The system and the measurement

    International Nuclear Information System (INIS)

    Ayrault, G.; Seidman, D.N.

    1978-01-01

    A novel system for direct measurement of the transmission sputtering yields of ion-irradiated thin films is described. The system was specifically designed for the study of the transmission sputtering caused by low energy ( 0 A thick) which was mounted in a JEM 200 transmission electron-microscope holder. The temperature of the specimen could be varied between approx. 25 and 300 K employing a continuous-transfer liquid-helium cryostat. The particles (atoms or ions) ejected from the unirradiated surface of the gold thin-film were detected by two channetron electron-multiplier arrays in the Chevron configuration; the Chevron detector was able to detect individual transmission sputtered particles when operated in the saturated mode. To further enhance resolution the electron cascades, produced by the CEMA, were amplified and shaped electronically into uniform square pulses. The shaped signals were detected with an Ithaco 391A lock-in amplifier (LIA). With the aid of a ratiometer feature in the LIA we were able to measure directly the ratio of the transmission sputtered-current (I/sub t/) to the incident ion-current (I/sub b/); for I/sub b/ = μA cm -2 a ratio of I/sub t//I/sub b/ as small as 1 x 10 -9 was measured. A detailed discussion of the calibration procedure and the experimental errors, involved in this technique, are also presented. 45 references

  6. Transition from linear to nonlinear sputtering of solid xenon

    DEFF Research Database (Denmark)

    Dutkiewicz, L.; Pedrys, R.; Schou, Jørgen

    1995-01-01

    Self-sputtering of solid xenon has been studied with molecular dynamics simulations as a model system for the transition from dominantly linear to strongly nonlinear effects. The simulation covered the projectile energy range from 20 to 750 eV. Within a relatively narrow range from 30 to 250 e...

  7. Towards a magnetic field separation in Ion Beam Sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Malobabic, Sina, E-mail: s.malobabic@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Kadhkoda, Puja [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Defects embedded in coatings due to particle contamination are considered as a primary factor limiting the quality of optical coatings in Ion Beam Sputtering. An approach combining the conventional Ion Beam Sputtering process with a magnetic separator in order to remove these particles from film growth is presented. The separator provides a bent axial magnetic field that guides the material flux towards the substrate positioned at the exit of the separator. Since there is no line of sight between target and substrate, the separator prevents that the particles generated in the target area can reach the substrate. In this context, optical components were manufactured that reveal a particle density three times lower than optical components which were deposited using a conventional Ion Beam Sputtering process. - Highlights: • We use bent magnetic fields to guide and separate the sputtered deposition material. • No line of sight between substrate and target prevents thin films from particles. • The transport efficiency of binary and ternary oxides is investigated. • The defect statistics of manufactured dielectric ternary multilayers are evaluated. • The phase separation leads to a drastically reduction of particle contamination.

  8. Modular design of AFM probe with sputtered silicon tip

    DEFF Research Database (Denmark)

    Rasmussen, Peter; Thaysen, Jacob; Bouwstra, Siebe

    2001-01-01

    of the thin films constituting the cantilever. The AFM probe has an integrated tip made of a thick sputtered silicon layer, which is deposited after the probe has been defined and just before the cantilevers are released. The tips are so-called rocket tips made by reactive ion etching. We present probes...

  9. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  10. Basic electrochemical properties of sputtered gold film electrodes

    International Nuclear Information System (INIS)

    Libansky, Milan; Zima, Jiri; Barek, Jiri; Reznickova, Alena; Svorcik, Vaclav; Dejmkova, Hana

    2017-01-01

    Gold nanolayers made by sputtering of pure gold (physical vapour deposition) are commonly used for many biophysical and material applications. However, the use of sputtering method for fabrication of working electrodes for electroanalytical purposes is less common. This paper focuses on the testing and characterization of sputtered working roughened gold nanostructured film electrodes, which fall into category of upcoming desirable new generation of nanostructured gold working electrodes. Gold nanostructured films (80 nm thin) were sputtered onto 50 μm thin PTFE substrates with three different types of treatment: pristine, plasma treated, and plasma treated and subsequently spontaneously grafted with biphenyl-4,4′-dithiol. The characterization of gold nanostructured film electrodes was carried out by examination of the electrode reaction of standard redox probes (ferrocyanide/ferricyanide, hydroquinone/benzoquinone) in different types of supporting electrolytes (BR buffers of various pH, KCl, KNO 3 , H 2 SO 4 ), by exploration of the electrode surface by scanning electron microscopy, by atomic force microscopy accompanied by elementary analysis and contact angle measurements. The testing of electrodes was complemented by an attempt to calculate their real surface areas from Randles-Sevcik equation. All results were compared to conventional bulk gold electrode. The practical applicability of the nanostructured gold electrodes as sensors for the determination of environmental pollutants was verified by voltammetric determination of hydroquinone as a model electrochemically oxidisable organic environmental pollutant.

  11. Development of ion beam sputtering techniques for actinide target preparation

    Science.gov (United States)

    Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

    1985-06-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

  12. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  13. Particle dynamics during electronic sputtering of solid krypton

    DEFF Research Database (Denmark)

    Dutkiewicz, L.; Pedrys, R.; Schou, Jørgen

    1995-01-01

    We have modeled electronic sputtering of solid krypton by excimer production with molecular dynamics. Both excimer evolution in the solid and deexcitation processes have been incorporated in the simulation. The excimer dynamics in the lattice has been analyzed: the excimers formed near the surface...

  14. Preparation of boron-nitrogen films by sputtering

    International Nuclear Information System (INIS)

    Klose, S.; Winde, B.

    1980-01-01

    Hard boron-nitrogen films adherent to various substrates can be prepared by sputtering. IR investigations suggest the existence of cubic boron nitride in certain layers. Transmission electron microscope studies have shown a quasi-amorphous structure irregularly incorporating crystallites of zinc blende structure of some nm in diameter

  15. Doubly Charged Ion Emission in Sputtering of Monocrystalline Fluorides

    Czech Academy of Sciences Publication Activity Database

    Lörinčík, Jan; Šroubek, Zdeněk

    2002-01-01

    Roč. 187, - (2002), s. 447-450 ISSN 0168-583X R&D Projects: GA ČR GA202/99/0881; GA AV ČR IAA1067801 Institutional research plan: CEZ:AV0Z4040901 Keywords : secondary ion emission * doubly charged * sputtering Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.158, year: 2002

  16. Oblique sputtered and evaporated magnetic thin films for tape recording

    NARCIS (Netherlands)

    Bijker, M.D.

    1998-01-01

    After having introduced some aspects of tape recording in chapter one, chapter two deals with the magnetron sputtering process itself. The kinetic energy of the electrons which are bound to the groove region by the combined action of the B and E field, was calculated. It was found that for a

  17. Inhomogeneous strain states in sputter deposited tungsten thin films

    International Nuclear Information System (INIS)

    Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

    1997-01-01

    The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

  18. Physicochemical model for reactive sputtering of hot target

    Energy Technology Data Exchange (ETDEWEB)

    Shapovalov, Viktor I., E-mail: vishapovalov@mail.ru; Karzin, Vitaliy V.; Bondarenko, Anastasia S.

    2017-02-05

    A physicochemical model for reactive magnetron sputtering of a metal target is described in this paper. The target temperature in the model is defined as a function of the ion current density. Synthesis of the coating occurs due to the surface chemical reaction. The law of mass action, the Langmuir isotherm and the Arrhenius equation for non-isothermal conditions were used for mathematical description of the reaction. The model takes into consideration thermal electron emission and evaporation of the target surface. The system of eight algebraic equations, describing the model, was solved for the tantalum target sputtered in the oxygen environment. It was established that the hysteresis effect disappears with the increase of the ion current density. - Highlights: • When model is applied for a cold target, hysteresis width is proportional to the ion current density. • Two types of processes of hot target sputtering are possible, depending on the current density: with and without the hysteresis. • Sputtering process is dominant at current densities less than 50 A/m{sup 2} and evaporation can be neglected. • For current densities over 50 A/m{sup 2} the hysteresis width reaches its maximum and the role of evaporation increases.

  19. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  20. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Czech Academy of Sciences Publication Activity Database

    Martines, E.; Zuin, M.; Cavazzana, R.; Adámek, Jiří; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.

    2014-01-01

    Roč. 21, č. 10 (2014), s. 102309-102309 ISSN 1070-664X Institutional support: RVO:61389021 Keywords : Drift waves * Magnetron sputtering plasma * Spatiotemporal synchronization Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014 http://dx.doi.org/10.1063/1.4898693

  1. Investigation of ion sputtering for eutectic Cu-37 at% Ag alloys

    International Nuclear Information System (INIS)

    Wang Zhenxia; Pan Jisheng; Zhang Jiping; Tao Zhenlan; Zhu Fuying; Zhao Lie; Zhang Huiming

    1994-01-01

    Angular distributions of sputtered atoms and the phenomenon of element locally rich relative to micro-topographic feature (ELR-MTF) of sputtered target surface have been investigated for Cu-37 at% Ag alloys by means of RBS, SEM and EPMA measurements. In the paper,emphasis will be put on the correlation between surface topography caused by Ar + ion bombardment with different doses and angular distribution of sputtered atoms ejecting from various micro-zones at topographical surface during sputtering. The experiment result was explained with the so-called ELR-MTF model which can qualitatively interpret the shape of the angular distributions and the variation of the preferential sputtering curves

  2. Low-temperature sputtering of crystalline TiO2 films

    International Nuclear Information System (INIS)

    Musil, J.; Herman, D.; Sicha, J.

    2006-01-01

    This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

  3. Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

    International Nuclear Information System (INIS)

    Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

    2008-01-01

    Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

  4. Search for an anomalous near-surface yield deficit in Rutherford backscattering spectra from implanted germanium and silicon

    International Nuclear Information System (INIS)

    Lawson, E.M.; Appleton, B.R.

    1983-09-01

    Rutherford backscattering and channelling analysis of high-dose, room-temperature, ion-implanted germanium has revealed an anomalous near-surface yield deficit. Implant dose and species dependencies and the effect of annealing have been examined. A marked loss of implanted impurity was also noted. The yield deficit is attributed to the absorption of oxygen and other light mass contaminants into a highly porous implanted layer upon exposure to air. Loss of implant species is attributed to enhanced sputtering effects

  5. Study of the ion sputter-machining, 1

    International Nuclear Information System (INIS)

    Miyamoto, Iwao; Taniguchi, Norio

    1979-01-01

    A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

  6. Total Thyroidectomy

    Directory of Open Access Journals (Sweden)

    Lopez Moris E

    2016-06-01

    Full Text Available Total thyroidectomy is a surgery that removes all the thyroid tissue from the patient. The suspect of cancer in a thyroid nodule is the most frequent indication and it is presume when previous fine needle puncture is positive or a goiter has significant volume increase or symptomes. Less frequent indications are hyperthyroidism when it is refractory to treatment with Iodine 131 or it is contraindicated, and in cases of symptomatic thyroiditis. The thyroid gland has an important anatomic relation whith the inferior laryngeal nerve and the parathyroid glands, for this reason it is imperative to perform extremely meticulous dissection to recognize each one of these elements and ensure their preservation. It is also essential to maintain strict hemostasis, in order to avoid any postoperative bleeding that could lead to a suffocating neck hematoma, feared complication that represents a surgical emergency and endangers the patient’s life.It is essential to run a formal technique, without skipping steps, and maintain prudence and patience that should rule any surgical act.

  7. Chemical degradation of selected Zn-based corrosion products induced by C{sub 60} cluster, Ar cluster and Ar{sup +} ion sputtering in the focus of X-ray photoelectron spectroscopy (XPS)

    Energy Technology Data Exchange (ETDEWEB)

    Steinberger, R., E-mail: roland.steinberger@jku.at [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Sicking, J., E-mail: jens.sicking@bayer.com [Bayer AG, Engineering & Technology, Applied Physics, Chempark Building E 41, 51368 Leverkusen (Germany); Weise, J., E-mail: juliane.weise@physik.tu-freiberg.de [Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany); Duchoslav, J., E-mail: jiri.duchoslav@jku.at [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Greunz, T., E-mail: theresia.greunz@jku.at [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Meyer, D.C., E-mail: Dirk-Carl.Meyer@physik.tu-freiberg.de [Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany); Stifter, D., E-mail: david.stifter@jku.at [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria)

    2017-05-01

    Highlights: • XPS investigations for various sputter concepts on Zn-based corrosions products. • Direct comparison of induced chemical damage for ion and cluster sputtering. • Azimuthal rotation or heavy projectile bombardment was not found to be beneficial. • Ar cluster etching is rated as unsuitable for surface cleaning or depth profiling. • C{sub 60} and Ar{sup +} are applicable for sputtering when degradation is carefully considered. - Abstract: Monoatomic ion sputtering is a common concept for surface sensitive analysis methods to clean surfaces prior investigation or to obtain information from deeper regions. However, severe damage of the materials – linked to preferential sputtering, ion implantation, atomic mixing and in worst case chemical degradation – can affect the validity of the analysis. Hence, the impact of C{sub 60} cluster etching, furthermore, of Ar{sup +} ion bombardment with and without azimuthal sample rotation and also the application of heavy projectiles (Xe{sup +} ions) was investigated to find a concept, which is less destructive or with less critical influence on the chemical nature of the investigated materials. In this work the focus is set on hydrozincite and zinc oxide, two common corrosion products of Zn-based coatings. As a main point, all the obtained results from (i) Ar{sup +} ion, (ii) Ar cluster, and (iii) C{sub 60} cluster etching on the degradation kinetics of hydrozincite were compared with respect to the reached sputter depth. In addition, the sputter rate of all three methods was experimentally determined for ZnO. In total, fully non-destructive conditions could not be found, but valuable knowledge on the type and rate of degradation, which is essential to choose the most suited sputter concept.

  8. Effect of sputtering on self-damaged recrystallized W mirror specimens

    Energy Technology Data Exchange (ETDEWEB)

    Voitsenya, V.S. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Belyaeva, A.I. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Alimov, V.Kh. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Tyburska-Püschel, B., E-mail: tyburska@engr.wisc.edu [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Galuza, A.A. [Institute of Electrophysics and Radiation Technologies, NAS of Ukraine, 61002 Kharkov (Ukraine); Kasilov, A.A.; Kolenov, I.V. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Konovalov, V.G. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Skoryk, O.O.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine)

    2013-03-15

    The effect of heavy sputtering and of neutron irradiation simulated by displacement damaging with of 20 MeV W{sup 6+} ions on the optical properties of tungsten mirrors was studied. Ar{sup +} ions with 600 eV of energy were used as imitation of charge exchange atoms ejected from fusion plasma. The ion fluence dependence of the surface topography and the optical properties of polycrystalline, recrystallized tungsten (grain size 20–100 μm) were studied by optical microscopy, interferometry, reflectometry and ellipsometry. Furthermore, after sputtering in total a layer of 3.9 μm in thickness, the orientation and the thickness of the eroded layer of many individual grains was determined by electron backscattering diffraction and confocal laser scanning microscopy. Concluding from the obtained data the neutron irradiation, at least at the damage level would be achieved in ITER, has not to make an additional contribution in the processes developing under impact of charge exchange atoms only.

  9. Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

    Science.gov (United States)

    Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

    1991-10-01

    We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

  10. Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

    International Nuclear Information System (INIS)

    Grace, J.M.; McDonald, D.B.; Reiten, M.T.; Olson, J.; Kampwirth, R.T.; Gray, K.E.

    1991-01-01

    We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O + 2 , which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O

  11. Titanium carbide coatings on molybdenum by means of reactive sputtering and electron beam techniques

    International Nuclear Information System (INIS)

    Obata, T.; Aida, H.; Hirohata, Y.; Mohri, M.; Yamashina, T.

    1982-01-01

    This study is an experimental investigation of TiC coatings on Mo substrate by means of a reactive r.f. sputtering in the presence of CH 4 and a chemical reaction with interdiffusion in the sandwich structure of Ti/C/Mo by electron beam evaporation and heating. Using the reactive sputtering method, a homogeneous TiC coating with stoichiometric composition and good adhesion could be produced in the conditions of the partial pressure range of CH 4 , 2 approx. equal to 5 x 10 -4 Torr (total pressure, Psub(Ar) + Psub(CH) 4 = 5.6 x 10 -2 Torr) at 300 0 C (substrate). By using the electron beams, successively evaporated carbon and Ti on a Mo substrate was heated to 700 0 C to form a TiC surface layer on the top which then remained stable during further heating to 1000 0 C. Godd adhesion was brought about by interdiffusion to produce Mo 2 C layer between TiC layer and Mo substrate. It was also found that further heating of the coating layers subsequent to Ti evaporation on the TiC layer produced thicker TiC layer due to a chemical reaction between Ti and inner carbon layers. This could be a promising method of in situ replenishment for TiC coatings on the first wall and the limiter materials. (orig.)

  12. Soviet test yields

    Science.gov (United States)

    Vergino, Eileen S.

    Soviet seismologists have published descriptions of 96 nuclear explosions conducted from 1961 through 1972 at the Semipalatinsk test site, in Kazakhstan, central Asia [Bocharov et al., 1989]. With the exception of releasing news about some of their peaceful nuclear explosions (PNEs) the Soviets have never before published such a body of information.To estimate the seismic yield of a nuclear explosion it is necessary to obtain a calibrated magnitude-yield relationship based on events with known yields and with a consistent set of seismic magnitudes. U.S. estimation of Soviet test yields has been done through application of relationships to the Soviet sites based on the U.S. experience at the Nevada Test Site (NTS), making some correction for differences due to attenuation and near-source coupling of seismic waves.

  13. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    International Nuclear Information System (INIS)

    Polášek, J.; Mašek, K.; Marek, A.; Vyskočil, J.

    2015-01-01

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O"− ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  14. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    Energy Technology Data Exchange (ETDEWEB)

    Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

    2015-09-30

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  15. Energy distribution and quantum yield for photoemission from air-contaminated gold surfaces under ultraviolet illumination close to the threshold

    Science.gov (United States)

    Hechenblaikner, Gerald; Ziegler, Tobias; Biswas, Indro; Seibel, Christoph; Schulze, Mathias; Brandt, Nico; Schöll, Achim; Bergner, Patrick; Reinert, Friedrich T.

    2012-06-01

    The kinetic energy distributions of photo-electrons emitted from gold surfaces under illumination by UV-light close to the threshold (photon energy in the order of the material work function) are measured and analyzed. Samples are prepared as chemically clean through Ar-ion sputtering and then exposed to atmosphere for variable durations before quantum yield measurements are performed after evacuation. During measurements, the bias voltage applied to the sample is varied and the resulting emission current measured. Taking the derivative of the current-voltage curve yields the energy distribution which is found to closely resemble the distribution of total energies derived by DuBridge for emission from a free electron gas. We investigate the dependence of distribution shape and width on electrode geometry and contaminant substances adsorbed from the atmosphere, in particular, to water and hydro-carbons. Emission efficiency increases initially during air exposure before diminishing to zero on a timescale of several hours, whilst subsequent annealing of the sample restores emissivity. A model fit function, in good quantitative agreement with the measured data, is introduced which accounts for the experiment-specific electrode geometry and an energy dependent transmission coefficient. The impact of large patch potential fields from contact potential drops between sample and sample holder is investigated. The total quantum yield is split into bulk and surface contributions which are tested for their sensitivity to light incidence angle and polarization. Our results are directly applicable to model parameters for the contact-free discharge system onboard the Laser Interferometer Space Antenna (LISA) Pathfinder spacecraft.

  16. Enhancement of HHG yield

    International Nuclear Information System (INIS)

    Serrat, C.; Biegert, J.

    2011-01-01

    A static electric field periodically distributed in space controls and enhances the yield in high harmonic generation. The method is relatively simple to implement and allows tuning from the extreme-ultraviolet to soft X-ray. The radiation yield is selectively enhanced due to symmetry breaking induced by a static electric field on the interaction between the driving laser and the medium. The enhanced spectral region is tuned by varying the periodicity of the static electric field. Simulations predict an increase of more than two orders of magnitude for harmonics in the water window spectral range.

  17. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    Energy Technology Data Exchange (ETDEWEB)

    Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

    2016-10-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

  18. Deuterium sputtering of Li and Li-O films

    Science.gov (United States)

    Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

    2017-10-01

    Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

  19. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  20. Reactively sputtered TeOx optical recording media

    International Nuclear Information System (INIS)

    Di Giulio, M.; Manno, D.; Micocci, G.; Rella, R.; Rizzo, A.; Tepore, A.

    1987-01-01

    Telluriom suboxide (TeO x ) thin films have been obtained by R.F. reactive sputtering deposition by using a Te target and an Ar-O 2 gas mixture. This technique of preparation has been shown to be a valid method because it is possible to easily obtain films with desired characteristics by an appropriate selection of the deposition conditions. Different samples were prepared by changing both the R.F. power (80-300 Watt) and the oxygen concentration in the sputtering gas. The films were analyzed in order to study their optical characteristics and the morphology before and after heat treatment. In particular, transmissivity and reflectivity have been found to change markedly by thermal treatment and critical temperatures in the range 120-150 grades centigrade. This property makes these films suitable for optical recording with a low output power laser diode

  1. Dependence of plasma characteristics on dc magnetron sputter parameters

    International Nuclear Information System (INIS)

    Wu, S.Z.

    2005-01-01

    Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure

  2. Resonance ionization of sputtered atoms: Progress toward a quantitative technique

    International Nuclear Information System (INIS)

    Calaway, W.F.; Pellin, M.J.; Young, C.E.; Whitten, J.E.; Gruen, D.M.; Coon, S.R.; Texas Univ., Austin, TX; Wiens, R.C.; Burnett, D.S.; Stingeder, G.; Grasserbauer, M.

    1992-01-01

    The combination of RIMS and ion sputtering has been heralded as the ideal means of quantitatively probing the surface of a solid. While several laboratories have demonstrated the extreme sensitivity of combining RIMS with sputtering, less effort has been devoted to the question of accuracy. Using the SARISA instrument developed at Argonne National Laboratory, a number of well-characterized metallic samples have been analyzed. Results from these determinations have been compared with data obtained by several other analytical methods. One significant finding is that impurity measurements down to ppb levels in metal matrices can be made quantitative by employing polycrystalline metal foils as calibration standards. This discovery substantially reduces the effort required for quantitative analysis since a single standard can be used for determining concentrations spanning nine orders of magnitude

  3. Corrosion of thin, magnetron sputtered Nb_2O_5 films

    International Nuclear Information System (INIS)

    Pillis, Marina Fuser; Geribola, Guilherme Altomari; Scheidt, Guilherme; Gonçalves de Araújo, Edval; Lopes de Oliveira, Mara Cristina; Antunes, Renato Altobelli

    2016-01-01

    Highlights: • Niobium oxide based films were obtained by DC magnetron sputtering. • Different deposition times were tested. • The best corrosion resistance was obtained for the Nb_2O_5 film produced at 15′. • Film porosity determines the corrosion resistance. - Abstract: Niobium oxide based thin films were deposited on AISI 316 stainless steel substrates using reactive DC magnetron sputtering. Structure, composition and corrosion resistance of the niobium oxide films were studied. The corrosion behavior of the specimens was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The concentration of niobium and oxygen in the films was obtained by Rutherford backscattering spectroscopy (RBS). The film structure was analyzed by X-ray diffractometry. The corrosion resistance of the substrate was improved by the Nb_2O_5 layers. The best protective performance was achieved for the deposition time of 15 min.

  4. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Juřík, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Malinský, P.; Macková, A. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Rez, Prague 25068 (Czech Republic); Faculty of Science, J.E. Purkyně University, Ústí nad Labem (Czech Republic); Kasálková, N. Slepičková; Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar{sup +} ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing.

  5. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  6. Target surface condition during reactive glow discharge sputtering of copper

    International Nuclear Information System (INIS)

    Depla, D; Haemers, J; Gryse, R De

    2002-01-01

    During reactive glow discharge sputtering of copper in an argon/nitrogen plasma, we noticed an abrupt change of the target voltage and the deposition rate when the nitrogen concentration in the plasma exceeds a critical value. To explain this behaviour, the target surface after reactive glow discharge sputtering was examined by x-ray photoelectron spectroscopy (XPS). An experimental arrangement was constructed that allows direct transfer of the glow discharge cathode to the XPS analysis chamber without air exposure. These XPS measurements revealed that several different chemical states of nitrogen are present in the layer that forms on the target surface. The relative concentration of these different states changes when the critical nitrogen concentration in the plasma is exceeded

  7. Magnetic properties of sputtered Permalloy/molybdenum multilayers

    International Nuclear Information System (INIS)

    Romera, M.; Ciudad, D.; Maicas, M.; Aroca, C.; Ranchal, R.

    2011-01-01

    In this work, we report the magnetic properties of sputtered Permalloy (Py: Ni 80 Fe 20 )/molybdenum (Mo) multilayer thin films. We show that it is possible to maintain a low coercivity and a high permeability in thick sputtered Py films when reducing the out-of-plane component of the anisotropy by inserting thin film spacers of a non-magnetic material like Mo. For these kind of multilayers, we have found coercivities which are close to those for single layer films with no out-of-plane anisotropy. The coercivity is also dependent on the number of layers exhibiting a minimum value when each single Py layer has a thickness close to the transition thickness between Neel and Bloch domain walls.

  8. Modeling of metastable phase formation diagrams for sputtered thin films.

    Science.gov (United States)

    Chang, Keke; Music, Denis; To Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M

    2016-01-01

    A method to model the metastable phase formation in the Cu-W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu-W and Cu-V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering.

  9. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  10. Study of the chemical sputtering in Tore-Supra; Etude de l'erosion chimique dans le tokamak Tore-Supra

    Energy Technology Data Exchange (ETDEWEB)

    Cambe, A

    2002-06-28

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C{sub 2}D{sub x} and C{sub 3}D{sub y}) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD{sub 4} (Y{sub CD4}) is highly flux ({phi}) dependent, showing a variation of the form: Y{sub CD4} {proportional_to} {phi}{sup -0.23}. The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y{sub CD4}. The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, {mu}m wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 {mu}m of tungsten. (author)

  11. Obsidian hydration profiles measured by sputter-induced optical emission.

    Science.gov (United States)

    Tsong, I S; Houser, C A; Yusef, N A; Messier, R F; White, W B; Michels, J W

    1978-07-28

    The variation of concentrations of hydrogen, sodium, potassium, lithium, calcium, magnesium, silicon, and aluminum as a function of depth in the hydration layer of obsidian artifacts has been determined by sputter-induced optical emission. The surface hydration is accompanied by dealkalization, and there is a buildup of alkaline earths, calcium and magnesium in the outermost layers. These results have clarified the phenomena underlying the obsidian hydration dating technique.

  12. Magnetron co-sputtering system for coating ICF targets

    International Nuclear Information System (INIS)

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-01-01

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres

  13. Ordering process of sputtered FePt films

    International Nuclear Information System (INIS)

    Takahashi, Y.K.; Ohnuma, M.; Hono, K.

    2003-01-01

    We have investigated the in situ ordering process of sputtered FePt thin films deposited on heated substrates at 300 deg. C with different thicknesses. The films thinner than 50 nm were composed of nanograins (∼5 nm) of disordered FePt phase. Recrystallization occurred when films were grown thicker than 100 nm, and transformation twins were observed in recrystallized grains, in which ordering to the L1 0 structure was confirmed

  14. Pumping mechanisms in sputter-ion pumps low pressure operation

    International Nuclear Information System (INIS)

    Welch, K.M.

    1991-01-01

    It is shown that significant H 2 pumping occurs in the walls of triode pumps. Also, H 2 is pumped in the anode cells of sputter-ion pumps. This pumping occurs in a manner similar to that by which the inert gases are pumped. That is, H 2 pumped in the walls of the anode cells by high energy neutral burial. Hydrogen in the pump walls and anodes limits the base pressure of the pump. 13 refs., 5 figs., 1 tab

  15. Pumping mechanisms in sputter-ion pumps low pressure operation

    International Nuclear Information System (INIS)

    Welch, K.M.

    1991-01-01

    It is shown that significant H 2 pumping occurs in the walls of triode pumps. Also, H 2 is pumped in the anode cells of sputter-ion pumps. This pumping occurs in a manner similar to that by which the inert gases are pumped. That is, H 2 is pumped in the walls of the anode cells by high energy neutral burial. Hydrogen in the pump walls and anodes limits the base pressure of the pump

  16. Depth of origin and angular spectrum of sputtered atoms

    International Nuclear Information System (INIS)

    Vicanek, M.; Jimenez Rodriguez, J.J.; Sigmund, P.

    1989-01-01

    A theoretical analysis is presented of the depth of origin of atoms sputtered from a random target. The physical model aims at high energy sputtering under linear cascade conditions and assumes a dilute source of recoil atoms. The initial distribution of the recoils is assumed isotropic, and their energy distribution is E -2 like without an upper or lower cutoff. The scattering medium is either infinite or bounded by a plane surface. Atoms scatter according to the m=0 power cross section. Electronic stopping is ignored. The sputtered flux, differential in depth of origin, ejection energy and ejection angle has been evaluated by Monte Carlo simulation and by five distinct methods of solution of the linear Boltzmann equation reaching from continuous slowing down neglecting angular scattering to the P 3 approximation and a Gram-Charlier expansion going over spatial moments. The continuous slowing down approximation used in previous work leads to results that are identical to those found from a scheme that only ignores angular scattering but allows for energy loss straggling. Moreover, these predictions match more closely with the Monte Carlo results than any of the approximate analytical schemes that take account of angular scattering. The results confirm the common assertion that the depth of origin of sputtered atoms is determined mainly by the stopping of low energy recoil atoms. The effect of angular scattering turns out to be astonishingly small. The distributions in depth of origin, energy, and angle do not depend significantly on whether the scattering medium is a halfspace or an infinite medium with a reference plane. The angular spectrum comes out only very slightly over cosine from the model as it stands, in agreement with previous experience, but comments are made on essential features that are not incorporated in the physical model but might influence the angular spectrum. (orig./WL)

  17. Doubly charged ion emission in sputtering of monocrystalline fluorides

    Czech Academy of Sciences Publication Activity Database

    Lörinčík, Jan; Šroubek, Zdeněk

    2002-01-01

    Roč. 187, č. 4 (2002), s. 447-450 ISSN 0168-583X. [Atomic Collisions in Solids ICACS /19./. Paris, 29.07.2001-03.08.2001] R&D Projects: GA AV ČR IAA1067801; GA ČR GA202/99/0881 Institutional research plan: CEZ:AV0Z2067918 Keywords : sputtering * molecular electronic states * secondary ion emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.158, year: 2002

  18. The crystallization and properties of sputter deposited lithium niobite

    Energy Technology Data Exchange (ETDEWEB)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W., E-mail: alan.doolittle@ece.gatech.edu

    2016-06-30

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO{sub 2}) is performed by co-deposition from a lithium oxide (Li{sub 2}O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO{sub 2}. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO{sub 2} films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO{sub 2}) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material.

  19. The crystallization and properties of sputter deposited lithium niobite

    International Nuclear Information System (INIS)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W.

    2016-01-01

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO_2) is performed by co-deposition from a lithium oxide (Li_2O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO_2. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO_2 films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO_2) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material

  20. Functional nanostructured titanium nitride films obtained by sputtering magnetron

    International Nuclear Information System (INIS)

    Sanchez, O.; Hernandez-Velez, M.; Navas, D.; Auger, M.A.; Baldonedo, J.L.; Sanz, R.; Pirota, K.R.; Vazquez, M.

    2006-01-01

    Development of new methods in the formation of hollow structures, in particular, nanotubes and nanocages are currently generating a great interest as a consequence of the growing relevance of these nanostructures on many technological fields, ranging from optoelectronics to biotechnology. In this work, we report the formation of titanium nitride (TiN) nanotubes and nanohills via reactive sputtering magnetron processes. Anodic Alumina Membranes (AAM) were used as template substrates to grow the TiN nanostructures. The AAM were obtained through electrochemical anodization processes by using oxalic acid solutions as electrolytes. The nanotubes were produced at temperatures below 100 deg. C, and using a pure titanium (99.995%) sputtering target and nitrogen as reactive gas. The obtained TiN thin films showed surface morphologies adjusted to pore diameter and interpore distance of the substrates, as well as ordered arrays of nanotubes or nanohills depending on the sputtering and template conditions. High Resolution Scanning Electron Microscopy (HRSEM) was used to elucidate both the surface order and morphology of the different grown nanostructures. The crystalline structure of the samples was examined using X-ray Diffraction (XRD) patterns and their qualitative chemical composition by using X-ray Energy Dispersive Spectroscopy (XEDS) in a scanning electron microscopy

  1. An introduction to closed field sputtering (CFS) equipment

    International Nuclear Information System (INIS)

    Sugden, G.B.

    1979-01-01

    Ways have been sought to develop the vacuum sputtering process to reduce the source material temperature and to increase the deposition rate. A new industrial plating method superior to vacuum evaporation and electroplating has emerged. In this 'closed field sputtering' processes an electric field is applied between a coaxial anode and cathode and a magnetic field applied orthogonally to the electric field. Providing the flux density of the magnetic field is above a critical value no electrons flow to the anode but move along the magnetic lines around the cathode, enclosed in the magnetic field. A high density electron cloud with high ionization probability is therefore maintained. Low temperature sputtering can be attained due to very low energy loss of electrons at the anode. A pressure of about (2-5) x 10(-4) torr is used. High power can be applied to the equipment without producing much heat. It enables a large number of plastic parts to be coated with almost any nonmagnetic metal and alloys of metals on a commercial basis. It is also possible to produce coatings of oxides. nitrides and carbides of metals. The method of operation and a description of the equipment are given. Applications include car exteriors, household appliances, furniture toys and the electronics industry. (UK)

  2. Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

    Science.gov (United States)

    Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

    2015-04-29

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed.

  3. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  4. Assessing Reliability of Cold Spray Sputter Targets in Photovoltaic Manufacturing

    Science.gov (United States)

    Hardikar, Kedar; Vlcek, Johannes; Bheemreddy, Venkata; Juliano, Daniel

    2017-10-01

    Cold spray has been used to manufacture more than 800 Cu-In-Ga (CIG) sputter targets for deposition of high-efficiency photovoltaic thin films. It is a preferred technique since it enables high deposit purity and transfer of non-equilibrium alloy states to the target material. In this work, an integrated approach to reliability assessment of such targets with deposit weight in excess of 50 lb. is undertaken, involving thermal-mechanical characterization of the material in as-deposited condition, characterization of the interface adhesion on cylindrical substrate in as-deposited condition, and developing means to assess target integrity under thermal-mechanical loads during the physical vapor deposition (PVD) sputtering process. Mechanical characterization of cold spray deposited CIG alloy is accomplished through the use of indentation testing and adaptation of Brazilian disk test. A custom lever test was developed to characterize adhesion along the cylindrical interface between the CIG deposit and cylindrical substrate, overcoming limitations of current standards. A cohesive zone model for crack initiation and propagation at the deposit interface is developed and validated using the lever test and later used to simulate the potential catastrophic target failure in the PVD process. It is shown that this approach enables reliability assessment of sputter targets and improves robustness.

  5. Arc generation from sputtering plasma-dielectric inclusion interactions

    CERN Document Server

    Wickersham, C E J; Fan, J S

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al sub 2 O sub 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect...

  6. Preparation and characterization of thick metastable sputter deposits

    International Nuclear Information System (INIS)

    Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

    1975-01-01

    High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

  7. Properties of tungsten films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

    1986-01-01

    High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

  8. Sequential sputtered Co-HfO{sub 2} granular films

    Energy Technology Data Exchange (ETDEWEB)

    Chadha, M.; Ng, V.

    2017-03-15

    A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

  9. INFLUENCE OF EDAPHIC FACTORS IN TOTAL PHENOLS AND TANNINS YIELD OF TWO BARBATIMÃO SPECIES (Stryphnodendron sp. INFLUÊNCIA DE FATORES EDÁFICOS NA PRODUÇÃO DE FENÓIS TOTAIS E TANINOS DE DUAS ESPÉCIES DE BARBATIMÃO

    Directory of Open Access Journals (Sweden)

    Tamiel Khan Baiocchi Jacobson

    2007-09-01

    Full Text Available

    This study evaluated the influence of edaphic factors on total phenols and tannins yield of two species of barbatimão (S. adstringens and S. polyphyllum. Data were collected in four ";cerrado"; locations in Goiás State, Brazil, during the dry (July 2001 and rainy season (February 2002. S. adstringens specimens (trees were sampled in the municipalities of Rio Verde, Bela Vista de Goiás and Silvânia, and specimens of S. polyphyllum were sampled in Rio Verde, Bela Vista de Goiás and Abadia de Goiás; five specimens were collected from each county, totaling thirty specimens. The collected material consisted of one bark sample per specimen and season, and soil samples at two depths (0-20 cm and 20-40 cm in the dry season. Bark total phenols and tannins were determined by Hagerman & Butler method, and soil analyses followed the current methods recommended by Embrapa. Data was statistically analyzed by principal component analysis. It was showed that low chemical fertility soils were associated with the highest total phenols and tannins, particularly for S. polyphylum. Higher yields of these metabolic products were observed in the rainy season. In the dry season, sandy soils were positively correlated with total phenols and tannins yields, while soil aluminum saturation was more correlated with total phenols and tannins in the rainy season.

    KEY-WORDS: Medicinal herb; cerrado; tannin; phenol.

    Neste estudo avaliou-se a influência de fatores edáficos sobre a produção de fenóis totais e taninos em duas espécies de barbatimão (S. adstringens e S. polyphyllum. Os dados foram coletados em quatro localidades da região de cerrado, em Goiás, nas estações seca (julho de 2001 e chuvosa (fevereiro de 2002. Foram amostrados indiv

  10. AFM characterization of nonwoven material functionalized by ZnO sputter coating

    International Nuclear Information System (INIS)

    Deng Bingyao; Yan Xiong; Wei Qufu; Gao Weidong

    2007-01-01

    Sputter coatings provide new approaches to the surface functionalization of textile materials. In this study, polyethylene terephthalate (PET) nonwoven material was used as a substrate for creating functional nanostructures on the fiber surfaces. A magnetron sputter coating was used to deposit functional zinc oxide (ZnO) nanostructures onto the nonwoven substrate. The evolution of the surface morphology of the fibers in the nonwoven web was examined using atomic force microscopy (AFM). The AFM observations revealed a significant difference in the morphology of the fibers before and after the sputter coating. The AFM images also indicated the effect of the sputtering conditions on the surface morphology of the fibers. The increase in the sputtering time led to the growth of the ZnO grains on the fiber surfaces. The higher pressure in the sputtering chamber could cause the formation of larger grains on the fiber surfaces. The higher power used also generated larger grains on the fiber surfaces

  11. Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

    Science.gov (United States)

    Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

    2012-01-01

    Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  12. Parallel detection, quantification, and depth profiling of peptides with dynamic-secondary ion mass spectrometry (D-SIMS) ionized by C{sub 60}{sup +}-Ar{sup +} co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chi-Jen [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Chang, Hsun-Yun; You, Yun-Wen; Liao, Hua-Yang [Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China); Kuo, Yu-Ting; Kao, Wei-Lun; Yen, Guo-Ji; Tsai, Meng-Hung [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Shyue, Jing-Jong, E-mail: shyue@gate.sinica.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China)

    2012-03-09

    Highlights: Black-Right-Pointing-Pointer Multiple peptides are detected and quantified at the same time without labeling. Black-Right-Pointing-Pointer C{sub 60}{sup +} ion is responsible for generating molecular-specific ions at high mass. Black-Right-Pointing-Pointer The co-sputtering yielded more steady depth profile and more well defined interface. Black-Right-Pointing-Pointer The fluence of auxiliary Ar{sup +} does not affect the quantification curve. Black-Right-Pointing-Pointer The damage from Ar{sup +} is masked by high sputtering yield of C{sub 60}{sup +}. - Abstract: Time-of-flight secondary ion mass spectrometry (ToF-SIMS) using pulsed C{sub 60}{sup +} primary ions is a promising technique for analyzing biological specimens with high surface sensitivities. With molecular secondary ions of high masses, multiple molecules can be identified simultaneously without prior separation or isotope labeling. Previous reports using the C{sub 60}{sup +} primary ion have been based on static-SIMS, which makes depth profiling complicated. Therefore, a dynamic-SIMS technique is reported here. Mixed peptides in the cryoprotectant trehalose were used as a model for evaluating the parameters that lead to the parallel detection and quantification of biomaterials. Trehalose was mixed separately with different concentrations of peptides. The peptide secondary ion intensities (normalized with respect to those of trehalose) were directly proportional to their concentration in the matrix (0.01-2.5 mol%). Quantification curves for each peptide were generated by plotting the percentage of peptides in trehalose versus the normalized SIMS intensities. Using these curves, the parallel detection, identification, and quantification of multiple peptides was achieved. Low energy Ar{sup +} was used to co-sputter and ionize the peptide-doped trehalose sample to suppress the carbon deposition associated with C{sub 60}{sup +} bombardment, which suppressed the ion intensities during the depth

  13. Development of methodics for the characterization of the composition of the ion-collision-induced secondary-particle flux by comparison of the yield contributions of photoinduced ion formation processes; Entwicklung einer Methodik zur Charakterisierung der Zusammensetzung des ionenbeschussinduzierten Sekundaerteilchenflusses durch Vergleich der Ausbeuteanteile photoinduzierter Ionenbildungsprozesse

    Energy Technology Data Exchange (ETDEWEB)

    Vering, Guido

    2008-10-13

    The aim of this work was to develop a method to distinguish between different ion formation processes and to determine the influence of these processes on the total number of detected monatomic ions of a certain element. A vector/matrix-formalism was developed, which describes the physical processes of sputtering, ion formation, mass separation and detection in laser-SNMS. In the framework of the method developed, based on this theoretic formalism, changes in the secondary flux contribution of the respective element were observed by comparing the detected monatomic ion yield obtained in specifically aligned (SIMS and) laser-SNMS experiments. The yields resulting from these experiments were used to calculate characteristic numbers to compare the flux composition from different surfaces. The potential of the method was demonstrated for the elements boron, iron and gadolinium by investigating the changes in the flux composition of secondary particles sputtered from metallic surfaces, as a function of the oxygen concentration at the surface. Finally, combined laser-SNMS depth profiles and images, obtained with both laser systems, were presented to demonstrate how the parallel detection of the three differently originated ion signals of the same element can be used to get additional information about the composition of the flux of secondary particles synchronously during the analysis of elemental distributions. In this respect the presented method can be a very helpful tool to prevent misleading interpretations of SIMS or laser-SNMS data. (orig.)

  14. Brazilian Soybean Yields and Yield Gaps Vary with Farm Size

    Science.gov (United States)

    Jeffries, G. R.; Cohn, A.; Griffin, T. S.; Bragança, A.

    2017-12-01

    Understanding the farm size-specific characteristics of crop yields and yield gaps may help to improve yields by enabling better targeting of technical assistance and agricultural development programs. Linking remote sensing-based yield estimates with property boundaries provides a novel view of the relationship between farm size and yield structure (yield magnitude, gaps, and stability over time). A growing literature documents variations in yield gaps, but largely ignores the role of farm size as a factor shaping yield structure. Research on the inverse farm size-productivity relationship (IR) theory - that small farms are more productive than large ones all else equal - has documented that yield magnitude may vary by farm size, but has not considered other yield structure characteristics. We examined farm size - yield structure relationships for soybeans in Brazil for years 2001-2015. Using out-of-sample soybean yield predictions from a statistical model, we documented 1) gaps between the 95th percentile of attained yields and mean yields within counties and individual fields, and 2) yield stability defined as the standard deviation of time-detrended yields at given locations. We found a direct relationship between soy yields and farm size at the national level, while the strength and the sign of the relationship varied by region. Soybean yield gaps were found to be inversely related to farm size metrics, even when yields were only compared to farms of similar size. The relationship between farm size and yield stability was nonlinear, with mid-sized farms having the most stable yields. The work suggests that farm size is an important factor in understanding yield structure and that opportunities for improving soy yields in Brazil are greatest among smaller farms.

  15. Characterization of surface modifications by white light interferometry: applications in ion sputtering, laser ablation, and tribology experiments.

    Science.gov (United States)

    Baryshev, Sergey V; Erck, Robert A; Moore, Jerry F; Zinovev, Alexander V; Tripa, C Emil; Veryovkin, Igor V

    2013-02-27

    In materials science and engineering it is often necessary to obtain quantitative measurements of surface topography with micrometer lateral resolution. From the measured surface, 3D topographic maps can be subsequently analyzed using a variety of software packages to extract the information that is needed. In this article we describe how white light interferometry, and optical profilometry (OP) in general, combined with generic surface analysis software, can be used for materials science and engineering tasks. In this article, a number of applications of white light interferometry for investigation of surface modifications in mass spectrometry, and wear phenomena in tribology and lubrication are demonstrated. We characterize the products of the interaction of semiconductors and metals with energetic ions (sputtering), and laser irradiation (ablation), as well as ex situ measurements of wear of tribological test specimens. Specifically, we will discuss: i. Aspects of traditional ion sputtering-based mass spectrometry such as sputtering rates/yields measurements on Si and Cu and subsequent time-to-depth conversion. ii. Results of quantitative characterization of the interaction of femtosecond laser irradiation with a semiconductor surface. These results are important for applications such as ablation mass spectrometry, where the quantities of evaporated material can be studied and controlled via pulse duration and energy per pulse. Thus, by determining the crater geometry one can define depth and lateral resolution versus experimental setup conditions. iii. Measurements of surface roughness parameters in two dimensions, and quantitative measurements of the surface wear that occur as a result of friction and wear tests. Some inherent drawbacks, possible artifacts, and uncertainty assessments of the white light interferometry approach will be discussed and explained.

  16. Estimating Corporate Yield Curves

    OpenAIRE

    Antionio Diaz; Frank Skinner

    2001-01-01

    This paper represents the first study of retail deposit spreads of UK financial institutions using stochastic interest rate modelling and the market comparable approach. By replicating quoted fixed deposit rates using the Black Derman and Toy (1990) stochastic interest rate model, we find that the spread between fixed and variable rates of interest can be modeled (and priced) using an interest rate swap analogy. We also find that we can estimate an individual bank deposit yield curve as a spr...

  17. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  18. Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss

    International Nuclear Information System (INIS)

    Xie Guofeng; Wang Dewu; Ying Chuntong

    2005-01-01

    One-dimensional ions extraction and collection using the RF resonance method is studied by PIC-MCC simulation. The energy and angle distribution of extracted ions is recorded and the sputtering loss is calculated. The results show that compared with parallel electrode method, RF resonance method has advantages such as shorter extraction time, lower collision loss and sputtering loss and higher collection ratio; the extraction time and collision loss are decreased with increasing extraction voltage, but the sputtering loss increases and collection ratio decreases; collision loss is decreased with increasing magnetic field, but the sputtering loss increases and collection ratio decreases. (authors)

  19. Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrode

    International Nuclear Information System (INIS)

    Wada, M.; Nakano, J.; Yanagawa, F.

    1985-01-01

    It is observed that strong rf sputtering of the Pb-alloy base electrodes causes the junctions to trap magnetic vortices and thus induces Josephson current (I/sub J/) suppression. Trapping begins to occur when the rf sputtering that removes the native thermal oxide on the base electrode is carried out prior to rf plasma oxidation. Observed large I/sub J/ suppression is presumably induced by the concentration of vortices into the sputtered area upon cooling the sample below the transition temperature. This suggests a new method of the circumvention of the vortex trapping by strongly rf sputtering the areas of the electrode other than the junction areas

  20. Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

    International Nuclear Information System (INIS)

    Kree, R.; Yasseri, T.; Hartmann, A.K.

    2009-01-01

    We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

  1. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  2. Angular distributions of particles sputtered from multicomponent targets with gas cluster ions

    Energy Technology Data Exchange (ETDEWEB)

    Ieshkin, A.E. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Ermakov, Yu.A., E-mail: yuriermak@yandex.ru [Skobeltsyn Nuclear Physics Research Institute, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Chernysh, V.S. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    The experimental angular distributions of atoms sputtered from polycrystalline W, Cd and Ni based alloys with 10 keV Ar cluster ions are presented. RBS was used to analyze a material deposited on a collector. It has been found that the mechanism of sputtering, connected with elastic properties of materials, has a significant influence on the angular distributions of sputtered components. The effect of non-stoichiometric sputtering at different emission angles has been found for the alloys under cluster ion bombardment. Substantial smoothing of the surface relief was observed for all targets irradiated with cluster ions.

  3. Leadership and Total Quality Management

    Science.gov (United States)

    1992-04-15

    leadership and management skills yields increased productivity. This paper will focus on the skills required of senior level leaders (leaders at the...publication until it has been cleared by the appropriate mii..-, service or government agency. Leadership and Total Quality Management An Individual Study...llty Codes fAvti1 and/or DltISpecial Abstract AUTHOR: Harry D. Gatanas, LTC, USA TITLE: Leadership and Total Quality Management FORMAT- Individual

  4. Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films

    International Nuclear Information System (INIS)

    Subrahmanyam, A.; Valleti, Krishna; Joshi, Srikant V.; Sundararajan, G.

    2007-01-01

    Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were ∼1.8 μm thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure (β phase) with a smooth surface (grain size of ∼10 nm) and exhibited an electrical resistivity of ∼194 μΩ cm and a hardness of ∼20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the α phase with a grain size of ∼40 nm, whereas the normal power mode gave mixed phases β and α beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed to either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both

  5. Calculations of atomic sputtering and displacement cross-sections in solid elements by electrons with energies from threshold to 1.5 MV

    International Nuclear Information System (INIS)

    Bradley, C.R.

    1988-12-01

    The kinetics of knock-on collisions of relativistic electrons with nuclei and details of the numerical evaluation of differential, recoil, and total Mott cross-sections are reviewed and discussed. The effects of electron beam induced displacement and sputtering, in the transmission electron microscope (TEM) environment, on microanalysis are analyzed with particular emphasis placed on the removal of material by knock-on sputtering. The mass loss predicted due to transmission knock-on sputtering is significant for many elements under conditions frequently encountered in microanalysis. Total Mott cross-sections are tabulated for all naturally occurring solid elements up to Z = 92 at displacement energies of one, two, four, and five times the sublimation energy and for accelerating voltages accessible in the transmission electron microscope. Fortran source code listings for the calculation of the differential Mott cross-section as a function of electron scattering angle (dMottCS), as a function of nuclear recoil angle (RECOIL), and the total Mott cross-section (TOTCS) are included. 48 refs., 21 figs., 12 tabs

  6. Water limits to closing yield gaps

    Science.gov (United States)

    Davis, Kyle Frankel; Rulli, Maria Cristina; Garrassino, Francesco; Chiarelli, Davide; Seveso, Antonio; D'Odorico, Paolo

    2017-01-01

    Agricultural intensification is often seen as a suitable approach to meet the growing demand for agricultural products and improve food security. It typically entails the use of fertilizers, new cultivars, irrigation, and other modern technology. In regions of the world affected by seasonal or chronic water scarcity, yield gap closure is strongly dependent on irrigation (blue water). Global yield gap assessments have often ignored whether the water required to close the yield gap is locally available. Here we perform a gridded global analysis (10 km resolution) of the blue water consumption that is needed annually to close the yield gap worldwide and evaluate the associated pressure on renewable freshwater resources. We find that, to close the yield gap, human appropriation of freshwater resources for irrigation would have to increase at least by 146%. Most study countries would experience at least a doubling in blue water requirement, with 71% of the additional blue water being required by only four crops - maize, rice, soybeans, and wheat. Further, in some countries (e.g., Algeria, Morocco, Syria, Tunisia, and Yemen) the total volume of blue water required for yield gap closure would exceed sustainable levels of freshwater consumption (i.e., 40% of total renewable surface and groundwater resources).

  7. A current induced diffusion model of gas sputtering

    International Nuclear Information System (INIS)

    Hotston, E.S.

    1980-01-01

    A model is proposed to explain the experimental results on deuteron trapping in stainless steel targets at low temperatures carried out at Garching and Culham. The model proposes that the ions are trapped in two kinds of sites: Deep sites with high activation energy and shallow sites of low activation energy. Trapped deuterons reach the surface of the target by being expelled from shallow sites by the action of the ion beam and migrate to nearby sites in a random way, thus moving by a bombardment induced diffusion. Ions diffusing to the target surface and being released are said to be sputtered from the target. It has been necessary to assume numerical values for sizes of some of the processes which occur. With a suitable choice of values the model successfully predicts the numbers of deuterons trapped per unit area of the target, the obserbed density profile of the trapped ions and the threshold at which sputtering starts. The model also successfully describes the replacement of the trapped deuterons by protons, when the deuteron beam is replaced by a proton beam. The collision cross-section for beam ions and ions trapped in shallow sites is too large, 4 x 10 -13 cm 2 , for a binary collision and it is tentatively suggested that the ions in the shallow sites may be in small voids in the target which may be connected with blister formation. Comparison of the present model with one being developed to describe the trapping of deuterons in carbon suggests that it may be possible to describe all gas sputtering experiments in terms of diffusion processes. (orig.)

  8. Evolution of sputtered tungsten coatings at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Stelmakh, Veronika; Rinnerbauer, Veronika; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan; Senkevich, Jay J. [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Tucker, Charles; Ives, Thomas; Shrader, Ronney [Materion Corporation, Buellton, California 93427 (United States)

    2013-11-15

    Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

  9. Synthesis and biological characterization of zirconium oxynitride thin film growth by radio-frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I. [Departamento de Química, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Facultad de Ingeniería, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Clavijo, D. [Facultad de Medicina, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de materiales con Aplicaciones Tecnológicas, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cardozo, C. [Instituto de Biotecnología, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2013-02-01

    Thin films of zirconium oxynitride were grown on common glass, silicon substrates (100) and on stainless steel 316L using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological, and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (SEM) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316L through proliferation and cellular adhesion. The XRD analysis showed that films deposited at 623 K, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 and a total deposit time of 30 min grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The SEM analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. Finally, through the analysis of the biocompatibility, we established that the films have a better surface than the substrate (stainless steel 316L) in terms of adhesion and proliferation of bone cells. - Highlights: ►ZrO{sub x}N{sub y} thin films were deposited using reactive radio-frequency magnetron sputtering. ►We studied the effect of deposition parameters on ZrO{sub x}N{sub y} thin films microstructure. ►We have been able to grow bone cells on ZrO{sub x}N{sub y} coated stainless steel 316L.

  10. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

    1998-01-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  11. Status of fission yield measurements

    International Nuclear Information System (INIS)

    Maeck, W.J.

    1979-01-01

    Fission yield measurement and yield compilation activities in the major laboratories of the world are reviewed. In addition to a general review of the effort of each laboratory, a brief summary of yield measurement activities by fissioning nuclide is presented. A new fast reactor fission yield measurement program being conducted in the US is described

  12. Pattern evolution during ion beam sputtering; reductionistic view

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.-H.; Kim, J.-S., E-mail: jskim@sm.ac.kr

    2016-09-15

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley–Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  13. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  14. Surface roughness of sputtered ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y S [Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd. Shou-Feng, Hualien, Taiwan (China); Hsu, K C [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China); Huang, Y M [Institute of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Taiwan (China)

    2006-09-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D{sub ts}) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D{sub ts}, root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved.

  15. Surface roughness of sputtered ZnO films

    International Nuclear Information System (INIS)

    Lin, Y S; Hsu, K C; Huang, Y M

    2006-01-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D ts ) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D ts , root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved

  16. Sputter deposition system for controlled fabrication of multilayers

    International Nuclear Information System (INIS)

    Di Nardo, R.P.; Takacs, P.Z.; Majkrzak, C.F.; Stefan, P.M.

    1985-06-01

    A detailed description of a sputter deposition system constructed specifically for the fabrication of x-ray and neutron multilayer monochromators and supermirrors is given. One of the principal design criteria is to maintain precise control of film thickness and uniformity over large substrate areas. Regulation of critical system parameters is fully automated so that response to feedback control information is rapid and complicated layer thickness sequences can be deposited accurately and efficiently. The use of either dc or rf magnetron sources makes it possible to satisfy the diverse material requirements of both x-ray and neutron optics

  17. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  18. Carbon dust formation in a cold plasma from cathode sputtering

    International Nuclear Information System (INIS)

    Arnas, C.; Mouberi, A.; Hassouni, K.; Michau, A.; Lombardi, G.; Bonnin, X.; Benedic, F.; Pegourie, B.

    2009-01-01

    Nanoparticles are produced in argon glow plasmas where carbon is introduced by sputtering of a graphite cathode. A scaling law of growth is reported on as a function of the discharge time. Two successive stages of growth of concomitant agglomeration and carbon deposition are observed, followed by a final stage of growth by carbon deposition. A model of formation of molecular precursors by coagulation of neutral clusters on the one hand and of neutral-negative clusters on the other hand is presented, based on formation enthalpy and cluster geometry.

  19. Carbon dust formation in a cold plasma from cathode sputtering

    Science.gov (United States)

    Arnas, C.; Mouberi, A.; Hassouni, K.; Michau, A.; Lombardi, G.; Bonnin, X.; Bénédic, F.; Pégourié, B.

    2009-06-01

    Nanoparticles are produced in argon glow plasmas where carbon is introduced by sputtering of a graphite cathode. A scaling law of growth is reported on as a function of the discharge time. Two successive stages of growth of concomitant agglomeration and carbon deposition are observed, followed by a final stage of growth by carbon deposition. A model of formation of molecular precursors by coagulation of neutral clusters on the one hand and of neutral-negative clusters on the other hand is presented, based on formation enthalpy and cluster geometry.

  20. Sputter deposited titanium disilicide at high substrate temperatures

    Science.gov (United States)

    Tanielian, M.; Blackstone, S.; Lajos, R.

    1984-08-01

    Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

  1. Pd-catalysts for DFAFC prepared by magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Bieloshapka, Igor; Jiříček, Petr; Vorokhta, M.; Tomšík, Elena; Rednyk, A.; Perekrestov, R.; Jurek, Karel; Ukraintsev, Egor; Hruška, Karel; Romanyuk, Olexandr; Lesiak, B.

    2017-01-01

    Roč. 419, Oct (2017), s. 838-846 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : Pd catalyst * formic acid fuel cell * magnetron sputtering * DFAFC * surface morphology Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (UMCH-V) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Condensed matter physics (including formerly solid state physics, supercond.) (UMCH-V) Impact factor: 3.387, year: 2016

  2. Nanofabrication by ion-beam sputtering fundamentals and applications

    CERN Document Server

    Som, Tapobrata

    2012-01-01

    Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

  3. Climate Variability and Sugarcane Yield in Louisiana.

    Science.gov (United States)

    Greenland, David

    2005-11-01

    This paper seeks to understand the role that climate variability has on annual yield of sugarcane in Louisiana. Unique features of sugarcane growth in Louisiana and nonclimatic, yield-influencing factors make this goal an interesting and challenging one. Several methods of seeking and establishing the relations between yield and climate variables are employed. First, yield climate relations were investigated at a single research station where crop variety and growing conditions could be held constant and yield relations could be established between a predominant older crop variety and a newer one. Interviews with crop experts and a literature survey were used to identify potential climatic factors that control yield. A statistical analysis was performed using statewide yield data from the American Sugar Cane League from 1963 to 2002 and a climate database. Yield values for later years were adjusted downward to form an adjusted yield dataset. The climate database was principally constructed from daily and monthly values of maximum and minimum temperature and daily and monthly total precipitation for six cooperative weather-reporting stations representative of the area of sugarcane production. The influence of 74 different, though not independent, climate-related variables on sugarcane yield was investigated. The fact that a climate signal exists is demonstrated by comparing mean values of the climate variables corresponding to the upper and lower third of adjusted yield values. Most of these mean-value differences show an intuitively plausible difference between the high- and low-yield years. The difference between means of the climate variables for years corresponding to the upper and lower third of annual yield values for 13 of the variables is statistically significant at or above the 90% level. A correlation matrix was used to identify the variables that had the largest influence on annual yield. Four variables [called here critical climatic variables (CCV

  4. Yield and competition in barley variety mixtures

    Directory of Open Access Journals (Sweden)

    Kari Jokinen

    1991-09-01

    Full Text Available Competition between spring barley varieties and yield performance of two-, three and four-variety mixtures were studied in two replacement series field experiments. In the first experiment, repeated in three successive years (1983 —85 the components were the six-row varieties Agneta, Arra, Hja-673 and Porno. In the second experiment (1984, including two nitrogen doses (50 and 100 kgN/ha, both six-row (Agneta, Pomo and two-row (Ida, Kustaa varieties were used. Arra in the first and Agneta in the second experiment were the most competitive varieties. The results suggested that the fast growth of Arra at the beginning promoted its competitive ability. Increase in available nitrogen usually strengthened the competitiveness of Agneta. The observed competitive differences between varieties were not related to the earliness of a variety, neither to the morphological characters (two- and six-row varieties nor to the grain yield of a variety grown alone. The competitive ability was not always a stable character, the dominant suppression relationship varying from one environment to another (e.g. growing season, nitrogen dose. The observed overyielding was not statistically significant. The ratio of actual to expected yield and the relative yield total of several mixtures exceeded slightly one. As a conclusion, the yield advantage of mixtures was marginal. As a rule, the mixtures were not more stable than monocultures as determined by the coefficient of variation. However, the yield of some mixtures varied less than the yield of the most stable monoculture.

  5. Reactive magnetron sputtering model at making Ti-TiOx coatings

    International Nuclear Information System (INIS)

    Luchkin, A G; Kashapov, N F

    2014-01-01

    Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

  6. Structure and soft magnetic properties of sputter deposited MnZn-ferrite films

    NARCIS (Netherlands)

    Gillies, M.F.; Coehoorn, R.; van Zon, J.B.A.D.; Alders, D.

    1998-01-01

    In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600¿°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, µ. The

  7. Non-stoichiometry of MoS2 phase prepared by sputtering

    International Nuclear Information System (INIS)

    Ito, T.; Nakajima, K.

    1978-01-01

    The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

  8. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to

  9. Intrinsic Photocatalytic Assessment of Reactively Sputtered TiO2 Films

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Driessen, Rick Theodorus; Driessen, Rick T.; Ogieglo, Wojciech; Lammertink, Rob G.H.

    2015-01-01

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during

  10. Formation of carbon nanotubes in the graphite surface by Ar ion sputtering

    International Nuclear Information System (INIS)

    Wang Zhenxia; Zhu Fuying; Wang Wenmin; Yu Guoqing; Ruan Meiling; Zhang Huiming; Zhu Jingping

    1998-01-01

    The authors have investigated structures and topography features of sputtered graphite surface using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), and demonstrated that carbon nanotubes can be grown up by sputtered-atom deposition on a protrusion of topography feature

  11. Results of Monte-Carlo studies on backscattering and sputtering from 'pocket' and 'finned' structures

    International Nuclear Information System (INIS)

    Brown, K.P.

    1978-01-01

    A Monte-Carlo computer program which has been developed for studying backscattering and sputtering processes involving high energy particles in complex vacuum structures has been used to show that useful reductions in backscattering and sputtering can be achieved by pocketing or finning the wall surfaces of plasma containment vessels. (author)

  12. A flexible platform for simulations of sputtering hollow cathode discharges for laser applications

    NARCIS (Netherlands)

    Mihailova, D.B.; Grozeva, M.; Hagelaar, G.J.M.; Dijk, van J.; Brok, W.J.M.; Mullen, van der J.J.A.M.

    2008-01-01

    The Plasimo modelling platform, extended with a cathode wall sputtering module is used to study the discharge processes and to optimise the design parameters of a sputtering hollow cathode discharge (HCD). We present Plasimo simulations of a HCD used for laser applications. A time dependent

  13. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

  14. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  15. Transpiration and crop yields

    NARCIS (Netherlands)

    Wit, de C.T.

    1958-01-01

    Theoretical and practical aspects of the transpiration of crops in the field are discussed and he concludes that the relationship between transpiration and total dry matter production is much less affected by growing conditions than has been supposed. In semi-arid and arid regions, this relationship

  16. Improvement of the Correlative AFM and ToF-SIMS Approach Using an Empirical Sputter Model for 3D Chemical Characterization.

    Science.gov (United States)

    Terlier, T; Lee, J; Lee, K; Lee, Y

    2018-02-06

    Technological progress has spurred the development of increasingly sophisticated analytical devices. The full characterization of structures in terms of sample volume and composition is now highly complex. Here, a highly improved solution for 3D characterization of samples, based on an advanced method for 3D data correction, is proposed. Traditionally, secondary ion mass spectrometry (SIMS) provides the chemical distribution of sample surfaces. Combining successive sputtering with 2D surface projections enables a 3D volume rendering to be generated. However, surface topography can distort the volume rendering by necessitating the projection of a nonflat surface onto a planar image. Moreover, the sputtering is highly dependent on the probed material. Local variation of composition affects the sputter yield and the beam-induced roughness, which in turn alters the 3D render. To circumvent these drawbacks, the correlation of atomic force microscopy (AFM) with SIMS has been proposed in previous studies as a solution for the 3D chemical characterization. To extend the applicability of this approach, we have developed a methodology using AFM-time-of-flight (ToF)-SIMS combined with an empirical sputter model, "dynamic-model-based volume correction", to universally correct 3D structures. First, the simulation of 3D structures highlighted the great advantages of this new approach compared with classical methods. Then, we explored the applicability of this new correction to two types of samples, a patterned metallic multilayer and a diblock copolymer film presenting surface asperities. In both cases, the dynamic-model-based volume correction produced an accurate 3D reconstruction of the sample volume and composition. The combination of AFM-SIMS with the dynamic-model-based volume correction improves the understanding of the surface characteristics. Beyond the useful 3D chemical information provided by dynamic-model-based volume correction, the approach permits us to enhance

  17. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  18. Studies on the reactive pulsed-magnetron sputtering of ITO from metallic targets; Untersuchungen zum reaktiven Pulsmagnetronsputtern von ITO von metallischen Targets

    Energy Technology Data Exchange (ETDEWEB)

    Gnehr, W.M.

    2006-06-15

    The thesis deals with a reactive sputter process for the deposition of ITO- films. In contrast to the usual technique, the sputter targets consists of indium-tin-alloy instead of ceramic ITO. All experiments were conducted on an inline coater with 600 mm target-width. The process is stabilized by a control loop based on optical emission detection. The experiments prove, that this control loop guarantees a long term stability of the outcomes of the coating process.Process parameters, that are crucial for the optical and electrical properties of the deposited thin films are identified and studied. Among them are the flow of oxygen and the substrate temperature but also less obvious parameters such as the distance between target and substrate.Througout the work the focus is on the film deposition with pulsed plasmas. Novel bipolar DC pulse- and pulse package generators are employed for the deposition.In order to shed some light onto the influence of certain pulse parameters on the outcome of a particular coating process, a Monte-Carlo-Simulation of the particle flow in pulsed plasmas is developed. This simulation yields the distribution of particles and their respective energies on deliberately placed planes in the process chamber. Particles under investigation are both sputtered species and neutral sputter gas atoms reflected at the target. The results of this simulation provide an explanation for the influence of certain pulse parameters on the outcome of the coating process. The further investigations deal with the influence of the construction of the process chamber on the coating process. For this purpose, locally resolved optical spectra are recorded. In order to analyse these spectra, a novel connected fit algorithm is developed.This algorithm yields the distribution of certain fitparameters on the substrate. Provided the most complex of the discussed parametrizations of the dielectric function are used, these can be crucial properties such as the carrier

  19. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  20. Exchange interaction in MnPt/FeCo sputtered multilayers

    International Nuclear Information System (INIS)

    Honda, S.; Nawate, M.; Norikane, T.

    2000-01-01

    MnPt single-layer films have been prepared on glass substrates by RF magnetron sputtering for studying the composition dependencies of resistivity and crystalline structure. In the as-deposited state, the resistivity increases with Mn content and reaches the maximum at 69 at%. By annealing, the resistivity of the films having the Mn content around 51 at% increases, closely relating to the growth of the ordered CuAu FCT-type MnPt crystals. For the both film structures of the glass/Cu/FeCo/MnPt/Cu and the glass/MnPt/FeCo/Cu, which have been sputter-deposited on glass substrates, the exchange interaction between MnPt and FeCo layers, and the coercivity of the FeCo layer have been examined as functions of the Mn content, the layer thickness and the annealing temperature. In the as-deposited state, the exchange field (H ex ) is nearly zero up to 75 at% of Mn content, above which the value of H ex increases and shows the maximum at 85 at%, in which the blocking temperature is about 100 deg. C. By annealing, the value of H ex increases for the films of Mn content around 40-60 at%, exhibiting the higher blocking temperature than 360 deg. C. The temperature stability has also been examined using the Rutherford backscattering spectrometry