WorldWideScience

Sample records for title current silicon

  1. Current Titles

    Energy Technology Data Exchange (ETDEWEB)

    Various

    2006-06-01

    This booklet is published for those interested in current research being conducted at the National Center for Electron Microscopy. The NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers. Access is controlled by an external steering committee. Interested researchers may contact Jane Cavlina, Administrator, at 510/486-6036.

  2. Current titles

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-07-01

    This booklet is published for those interested in current research being conducted at the National Center for Electron Microscopy. The NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers. Access is controlled by an external steering committee. Interested researchers may contact Gretchen Hermes at (510) 486-5006 or address below for a User`s Guide. Copies of available papers can be ordered from: Theda Crawford National Center for Electron Microscopy, Lawrence Berkeley Laboratory, One Cyclotron Rd., MS72, Berkeley, California, USA 94720.

  3. Silicon radiation detector analysis using back electron beam induced current

    International Nuclear Information System (INIS)

    Guye, R.

    1987-01-01

    A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

  4. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  5. Counselor Education and Title IX: Current Perceptions and Questions

    Science.gov (United States)

    Welfare, Laura E.; Wagstaff, Jennifer; Haynes, Jenna R.

    2017-01-01

    This national survey of counselor educator perceptions of the Title IX requirement to report student disclosures of gender-based discrimination revealed the need for greater clarity about faculty strategies for serving counseling program students while upholding the federal law. The authors describe the recent expansion of the requirements and…

  6. Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...

  7. Characterization of ion implanted silicon by the electrolytic reverse current

    International Nuclear Information System (INIS)

    Hueller, J.; Pham, M.T.

    1977-01-01

    The current voltage behaviour of ion implanted silicon electrodes in HF electrolyte is investigated. The electrolytic reverse current, i.e. the reaction rate of the minority carrier limited reactions is found to increase. The current increase depends on the implanted dose and layer stripping. Reason for the increased reverse current can be referred to radiation damage acting as generation centres for minority carriers. Measurement of the electrolytic reverse current can be used for determining damage profiles. Layer stripping is carried out by anodic dissolution in the same electrolyte. The sensitivity of this new method for characterizing ion implanted silicon layers lies at 10 11 to 10 12 atoms/cm 2 . (author)

  8. \\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

    CERN Document Server

    Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

    2014-01-01

    Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

  9. 3D, Flash, Induced Current Readout for Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

    2014-06-07

    A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

  10. TITLE

    Directory of Open Access Journals (Sweden)

    Abdolhamid Papzan

    2013-01-01

    Full Text Available This study investigated entrepreneurial intention among graduate students of USM Engineering Campus. Applying the Theory of Planned Behavior (TPB; Ajzen, we examined the empirical model of entrepreneurial intention determinants. Although research has been conducted in entrepreneurial intention, limited study has been done among Iranian graduate students who are studying abroad. This research aims to fill this gap using Entrepreneurial Intention Questionnaire (EIQ, version 3.1. Accordingly, a survey study was applied and Iranian graduate students of the USM Engineering Campus were studied using the census method. The authors propose an empirical model and tested its reliability and validity using structural equation modeling. Data was analyzed using Spss16 and Amos18 software. Results revealed that the level of knowledge about business sources of assistance for entrepreneurs in addition to components of the TPB, affected entrepreneurial intention. Empirical model ‘s goodness of fit indices indicated good model fit x2=1.047, df=2, probability 0.592; NFI= 0.981; CFI= 1.000; RMSEA=0.000. It seems that current empirical model could be a guide for future research on this important topic.

  11. Silicon Photomultipliers: Dark Current and its Statistical Spread

    Directory of Open Access Journals (Sweden)

    Roberto PAGANO

    2012-03-01

    Full Text Available Aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such a comparison is made, crucial to pass this new technology to the semiconductor manufacturing standards. In particular, emission microscopy measurements and current measurements allowed us to conclude that optical trenches strongly improve the device performances.

  12. Current titles

    International Nuclear Information System (INIS)

    1993-04-01

    116 abstracts are presented of work done with the electron microscope. NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers (assess is controlled by a steering committee)

  13. Current titles

    Energy Technology Data Exchange (ETDEWEB)

    1993-04-01

    116 abstracts are presented of work done with the electron microscope. NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers (assess is controlled by a steering committee).

  14. Thermally stimulated current method applied to highly irradiated silicon diodes

    CERN Document Server

    Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

    2002-01-01

    We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

  15. Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

    2009-05-15

    In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

  16. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Science.gov (United States)

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

    International Nuclear Information System (INIS)

    Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

    2011-01-01

    The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

  18. Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

    International Nuclear Information System (INIS)

    Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

    2011-01-01

    The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

  19. Current Obstacles to Fully Preparing Title 10 Forces for Homeland Defense and Civil Support

    National Research Council Canada - National Science Library

    Campbell, James S

    2008-01-01

    .... During a crisis, the President and Secretary of Defense could authorize use of Title 10 forces. However, this "just in time" approach does not allow for the units assigned the opportunity to be fully trained to respond...

  20. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

    2016-01-01

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  1. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  2. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  3. Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

    NARCIS (Netherlands)

    Sturiale, A.; Li, H. B. T.; Rath, J.K.; Schropp, R.E.I.; Rubinelli, F.A.

    2009-01-01

    The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions:

  4. Direct current microhollow cathode discharges on silicon devices operating in argon and helium

    Science.gov (United States)

    Michaud, R.; Felix, V.; Stolz, A.; Aubry, O.; Lefaucheux, P.; Dzikowski, S.; Schulz-von der Gathen, V.; Overzet, L. J.; Dussart, R.

    2018-02-01

    Microhollow cathode discharges have been produced on silicon platforms using processes usually used for MEMS fabrication. Microreactors consist of 100 or 150 μm-diameter cavities made from Ni and SiO2 film layers deposited on a silicon substrate. They were studied in the direct current operating mode in two different geometries: planar and cavity configuration. Currents in the order of 1 mA could be injected in microdischarges operating in different gases such as argon and helium at a working pressure between 130 and 1000 mbar. When silicon was used as a cathode, the microdischarge operation was very unstable in both geometry configurations. Strong current spikes were produced and the microreactor lifetime was quite short. We evidenced the fast formation of blisters at the silicon surface which are responsible for the production of these high current pulses. EDX analysis showed that these blisters are filled with argon and indicate that an implantation mechanism is at the origin of this surface modification. Reversing the polarity of the microdischarge makes the discharge operate stably without current spikes, but the discharge appearance is quite different from the one obtained in direct polarity with the silicon cathode. By coating the silicon cathode with a 500 nm-thick nickel layer, the microdischarge becomes very stable with a much longer lifetime. No current spikes are observed and the cathode surface remains quite smooth compared to the one obtained without coating. Finally, arrays of 76 and 576 microdischarges were successfully ignited and studied in argon. At a working pressure of 130 mbar, all microdischarges are simultaneously ignited whereas they ignite one by one at higher pressure.

  5. Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

    Science.gov (United States)

    Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

    2018-01-01

    The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

  6. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  7. The Current State of Silicone-Based Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    2016-01-01

    class of transducer due to their inherent lightweight and potentially large strains. For the field to progress towards industrial implementation, a leap in material devel- opment is required, specifically targeting longer lifetime and higher energy densities to provide more efficient transduction at lower...... driving voltages. In this review, the current state of sili- cone elastomers for DETs is summarised and critically discussed, including commercial elastomers, composites, polymer blends, grafted elastomers and complex network structures. For future developments in the field it is essential that all aspects...

  8. Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

    1987-01-01

    Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

  9. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  10. Influence of wavelength on transient short-circuit current in polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Ba, B.; Kane, M.

    1993-10-01

    The influence of the wavelength of a monochromatic illumination on transient short-circuit current in an n/p polycrystalline silicon part solar cell junction is investigated. A wavelength dependence in the initial part of the current decay is observed in the case of cells with moderate grain boundary effects. This influence is attenuated in polycrystalline cells with strong grain boundary activity. (author). 10 refs, 6 figs

  11. Controlling the Er content of porous silicon using the doping current intensity

    KAUST Repository

    Mula, Guido

    2014-07-04

    The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.

  12. Tunnel current through virus particles between columnar structures in mesoporous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vashpanov, Yuriy; Jung, Jae-Il; Dal Kwack, Kae [Electrical Engineering and Computer Science Division of Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Seongdong-gu, 133-791 Seoul (Korea, Republic of)

    2011-07-15

    Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper to establish that this observed tunnel current is connected to a conduction path through virus particles. The plant NEPO viruses have an orbicular shape with a diameter of around 25-30 nm. This size is matched well to the porous size distribution in manufactured samples. The tunnel charge transport in semiconductor structures was not observed on loading protein macromolecules of smaller sizes. A physical mechanism of the observed phenomena can be interpreted to be the result of a shunting effect through virus particles between the two closely located columnar silicon structures. This effect is likely to result from double points at virus adsorption under the condition of matching of pore and virus sizes. The magnitudes of the tunnel barrier heights depend on the type of loaded plant viruses. The investigated columnar structures of mesoporous silicon can be used for research on the electrical properties of different viruses with corresponding sizes in the range of 20-30 nm. The existence of a tunnel current between columnar structures in mesoporous silicon under virus adsorption can be used as a simple method for their detection in the environment. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  14. Graphene as transparent and current spreading electrode in silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Behura, Sanjay K., E-mail: sanjaybehura@gmail.com; Nayak, Sasmita; Jani, Omkar [Solar Energy Research Wing, Gujarat Energy Research and Management Institute - Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat (India); Mahala, Pramila [School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat (India)

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  15. Graphene as transparent and current spreading electrode in silicon solar cell

    Directory of Open Access Journals (Sweden)

    Sanjay K. Behura

    2014-11-01

    Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  16. Subthreshold currents in CMOS transistors made on oxygen-implanted silicon

    International Nuclear Information System (INIS)

    Foster, D.J.

    1983-01-01

    Kinks have been observed in subthreshold current plots of mesa-shaped n-channel transistors made on oxygen-implanted silicon substrates. The kinks represent additional current flow and are due to overlapping fields from the gate electrode causing early corner inversion and to a Qsub(ss) side-wall effect. Subthreshold currents in n-channel transistors are dominated by the two effects which, as a consequence, reduce threshold voltages especially in narrow n-channel transistors. The subthreshold characteristics of p-channel transistors were not affected in the same way. (author)

  17. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    International Nuclear Information System (INIS)

    Lagov, P B; Drenin, A S; Zinoviev, M A

    2017-01-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

  18. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    Science.gov (United States)

    Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

    2017-05-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

  19. Spontaneous layering of porous silicon layers formed at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Parkhutik, Vitali; Curiel-Esparza, Jorge; Millan, Mari-Carmen [R and D Center MTM, Technical University of Valencia, Valencia (Spain); Albella, Jose [Institute of Materials Science (ICMM CSIC) Madrid (Spain)

    2005-06-01

    We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous p-Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated from others and possesses rather flat interfaces. The effects is observed using p{sup +}-Si wafers for the p-Si formation and starts being noticeable at above 100 mA/cm{sup 2}. We interpret these results in terms of the porous silicon growth model where generation of dynamic mechanical stress during the p-Si growth causes sharp changes in Si dissolution mechanism from anisotropic etching of individual needle-like pores in silicon to their branching and isotropic etching. At this moment p-Si layer loses its adhesion to the surface of Si wafer and another p-Si layer starts growing. One of the mechanisms triggering on the separation of p-Si layers from one another is a fluctuation of local anodic current in the pore bottoms associated with gas bubble evolution during the p-Si formation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Reduction in Recombination Current Density in Boron Doped Silicon Using Atomic Hydrogen

    Science.gov (United States)

    Young, Matthew Garett

    The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type silicon solar cells. This required the development of a boron diffusion process that maintained the bulk lifetime of n-type silicon such that the recombination current density could be extracted by photoconductance spectroscopy. It is demonstrated that by hydrogenating boron diffusions, the majority carrier concentration can be controlled. By using symmetrically diffused test structures with quinhydrone-methanol surface passivation the recombination current density of a hydrogenated boron profile is shown to be less than that of a standard boron profile, by as much as 30%. This is then applied to a modified industrial silicon solar cell process to demonstrate an efficiency enhancement of 0.4%.

  1. Silicone Substrate with Collagen and Carbon Nanotubes Exposed to Pulsed Current for MSC Osteodifferentiation

    Directory of Open Access Journals (Sweden)

    Daniyal Jamal

    2017-01-01

    Full Text Available Autologous human adipose tissue-derived mesenchymal stem cells (MSCs have the potential for clinical translation through their induction into osteoblasts for regeneration. Bone healing can be driven by biophysical stimulation using electricity for activating quiescent adult stem cells. It is hypothesized that application of electric current will enhance their osteogenic differentiation, and addition of conductive carbon nanotubes (CNTs to the cell substrate will provide increased efficiency in current transmission. Cultured MSCs were seeded and grown onto fabricated silicone-based composites containing collagen and CNT fibers. Chemical inducers, namely, glycerol phosphate, dexamethasone, and vitamin C, were then added to the medium, and pulsatile submilliampere electrical currents (about half mA for 5 cycles at 4 mHz, twice a week were applied for two weeks. Calcium deposition indicative of MSC differentiation and osteoblastic activity was quantified through Alizarin Red S and spectroscopy. It was found that pulsed current significantly increased osteodifferentiation on silicone-collagen films without CNTs. Under no external current, the presence of 10% (m/m CNTs led to a significant and almost triple upregulation of calcium deposition. Both CNTs and current parameters did not appear to be synergistic. These conditions of enhanced osteoblastic activities may further be explored ultimately towards future therapeutic use of MSCs.

  2. Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

    Science.gov (United States)

    2016-08-19

    limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

  3. Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Wanjie Xu

    2015-01-01

    Full Text Available A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approximations for subband energy levels, an analytical model for the subthreshold drain current is obtained. The model is further used for predicting the subthreshold slopes and threshold voltages of the transistors. Our results agree well with TCAD simulation with different geometries and under different biasing conditions.

  4. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  5. Some considerations on silicone oil in high-current and energy-disconnecting mechanisms

    International Nuclear Information System (INIS)

    Vogel, H.F.

    1984-03-01

    Silicone oil is considered inflammable. The dissociation products generated by an electric arc under silicone oil are known to form a highly explosive mixture with air. We calculate the arc energy required for dissociation to be 32 kJ per liter of gas mixture at standard pressure and temperature. We calculate the arc voltage gradient at a pressure of 50 atm and current density of 1 kA/mm 2 to be 0.5 kV/cm, resulting in an arc voltage of several kV, depending on the arc length. In a multikiloampere arc, the resulting arc power is likely to cause a pressure of many atmospheres in a shock wave

  6. Spike train generation and current-to-frequency conversion in silicon diodes

    Science.gov (United States)

    Coon, D. D.; Perera, A. G. U.

    1989-01-01

    A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.

  7. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    International Nuclear Information System (INIS)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J.; Dyk, E.E. van

    2009-01-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  8. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    Energy Technology Data Exchange (ETDEWEB)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  9. Eddy current imaging for electrical characterization of silicon solar cells and TCO layers

    Science.gov (United States)

    Hwang, Byungguk; Hillmann, Susanne; Schulze, Martin; Klein, Marcus; Heuer, Henning

    2015-03-01

    Eddy Current Testing has been mainly used to determine defects of conductive materials and wall thicknesses in heavy industries such as construction or aerospace. Recently, high frequency Eddy Current imaging technology was developed. This enables the acquirement of information of different depth level in conductive thin-film structures by realizing proper standard penetration depth. In this paper, we summarize the state of the art applications focusing on PV industry and extend the analysis implementing achievements by applying spatially resolved Eddy Current Testing. The specific state of frequency and complex phase angle rotation demonstrates diverse defects from front to back side of silicon solar cells and characterizes homogeneity of sheet resistance in Transparent Conductive Oxide (TCO) layers. In order to verify technical feasibility, measurement results from the Multi Parameter Eddy Current Scanner, MPECS are compared to the results from Electroluminescence.

  10. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  11. Description of current pulses induced by heavy ions in silicon detectors (II)

    Energy Technology Data Exchange (ETDEWEB)

    Hamrita, H. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); CEA, LIST, Laboratoire Capteurs et Architectures Electroniques, F-91191 Gif-sur-Yvette Cedex (France); Parlog, M. [LPC, CNRS/IN2P3, ENSICAEN, Universite de Caen, F-14050 Caen Cedex (France); National Institute for Physics and Nuclear Engineering, RO-76900 Bucharest-Magurele (Romania); Borderie, B., E-mail: borderie@ipno.in2p3.fr [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); Lavergne, L. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); Le Neindre, N. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); LPC, CNRS/IN2P3, ENSICAEN, Universite de Caen, F-14050 Caen Cedex (France); Rivet, M.F.; Barbey, S. [Institut de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); Bougault, R. [LPC, CNRS/IN2P3, ENSICAEN, Universite de Caen, F-14050 Caen Cedex (France); Chabot, M. [Inst. de Physique Nucleaire, CNRS/IN2P3, Universite Paris-Sud 11, F-91406 Orsay Cedex (France); Chbihi, A. [GANIL (DSM-CEA/CNRS/IN2P3), F-14076 Caen Cedex (France); Cussol, D. [LPC, CNRS/IN2P3, ENSICAEN, Univ. de Caen, F-14050 Caen Cedex (France); Oliveira Santos, F. de [GANIL (DSM-CEA/CNRS/IN2P3), F-14076 Caen Cedex (France); Edelbruck, P. [Inst. de Physique Nucleaire, CNRS/IN2P3, Univ. Paris-Sud 11, F-91406 Orsay Cedex (France); Frankland, J.D. [GANIL (DSM-CEA/CNRS/IN2P3), F-14076 Caen Cedex (France); Galichet, E. [Inst. de Physique Nucleaire, CNRS/IN2P3, Univ. Paris-Sud 11, F-91406 Orsay Cedex (France); Conservatoire National des Arts et Metier, F-75141 Paris Cedex 03 (France); Guinet, D.; Lautesse, Ph. [Inst. de Physique Nucleaire, CNRS/IN2P3, Univ.e Claude Bernard Lyon I, F-69622 Villeurbanne Cedex (France); Lopez, O. [LPC, CNRS/IN2P3, ENSICAEN, Univ. de Caen, F-14050 Caen Cedex (France)

    2011-06-21

    Current pulses induced in a silicon detector by 10 different heavy ion species at known energies around 10 A MeV have been sampled in time at high frequency. Their individual average shapes are quite well reproduced by a fit procedure based on our recent charge carrier collection treatment which considers the progressive extraction of the electrons and holes from the high carrier density zone along the ionizing particle track. This region is assumed to present a supplementary dielectric polarization and consequently a disturbed electric field. The influence of the nature of the heavy ion on the values of the three fit parameters is analyzed.

  12. Current and future priorities for mass and material in silicon PV module recycling

    Energy Technology Data Exchange (ETDEWEB)

    Olson, C.L.; Geerligs, L.J.; Goris, M.J.A.A.; Bennett, I.J. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Clyncke, J. [PV CYCLE, Rue Montoyer 23, 1000 Brussels (Belgium)

    2013-10-15

    A full description of the state-of-the-art PV recycling methods and their rationale is presented, which discusses the quality of the recycled materials and the fate of the substances which end up in the landfill. The aim is to flag the PV module components currently not recycled, which may have a priority in terms of their embedded energy, chemical nature or scarcity, for the next evolution of recycling. The sustainability of different recycling options, emerging in the literature on electronic waste recycling, and the possible improvement of the environmental footprint of silicon PV modules, will be discussed.

  13. Development of processing procedures for advanced silicon solar cells. [antireflection coatings and short circuit currents

    Science.gov (United States)

    Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

    1975-01-01

    Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

  14. Current signal of silicon detectors facing charged particles and heavy ions

    International Nuclear Information System (INIS)

    Hamrita, H.

    2005-07-01

    This work consisted in collecting and studying for the first time the shapes of current signals obtained from charged particles or heavy ions produced by silicon detectors. The document is divided into two main parts. The first consisted in reducing the experimental data obtained with charged particles as well as with heavy ions. These experiments were performed at the Orsay Tandem and at GANIL using LISE. These two experiments enabled us to create a data base formed of current signals with various shapes and various times of collection. The second part consisted in carrying out a simulation of the current signals obtained from the various ions. To obtain this simulation we propose a new model describing the formation of the signal. We used the data base of the signals obtained in experiments in order to constrain the three parameters of our model. In this model, the charge carriers created are regarded as dipoles and their density is related to the dielectric polarization in the silicon detector. This phenomenon induces an increase in permittivity throughout the range of the incident ion and consequently the electric field between the electrodes of the detector is decreased inside the trace. We coupled with this phenomenon a dissociation and extraction mode of the charge carriers so that they can be moved in the electric field. (author)

  15. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  16. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1976-01-01

    A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

  17. Electrochemical doping of mesoporous silicon with Er: the effect of the current intensity

    Energy Technology Data Exchange (ETDEWEB)

    Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Pinna, Elisa [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d’Armi, 09126 Cagliari (Italy)

    2014-08-30

    Graphical abstract: - Highlights: • A multidisciplinary approach on porous Si electrochemical Er doping is proposed. • The phenomena taking place at the large developed surface of porous silicon are studied. • Electrochemical, optical and structural characterizations are used. • The early stages of doping are studied by electrochemical impedance spectroscopy. • The dependence of the final amount of Er deposited on the current intensity and not only on the transferred charge is shown. - Abstract: There is an ongoing intense research for cost-effective Er-doped Si-based light-emitting devices at the 1.5 μm wavelength. The efficient electrochemical Er-doping of porous silicon for this purpose requires a good understanding of the phenomena involved, since those taking place at the pores inner surface control the doping process. However, almost no attention has been given, to date, to the relevant effects of the current intensity onto the doping results. In this work, the effect of the current intensity on the doping process is explored by means of electrochemical impedance spectroscopy, optical reflectivity and energy dispersive spectrometry via scanning electron microscopy. The combined analysis of all results strongly suggests that the formation of a gel-like Er ethanolate, unaffected by changes in the sample thickness, occurs from the very first stages of the doping process. Moreover, while for constant current doping processes we show that, under any given doping condition, the doping level is proportional to the transferred charge, we demonstrate that performing the doping process using different current intensities may lead to dramatically different results.

  18. Development of large area silicon semiconductor detectors for use in the current mode

    CERN Document Server

    Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

    2002-01-01

    Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

  19. Influence of epoxy resin as encapsulation material of silicon photovoltaic cells on maximum current

    Directory of Open Access Journals (Sweden)

    Acevedo-Gómez David

    2017-01-01

    Full Text Available This work presents an analysis about how the performance of silicon photovoltaic cells is influenced by the use of epoxy resin as encapsulation material with flat roughness. The effect of encapsulation on current at maximum power of mono-crystalline cell was tested indoor in a solar simulator bench at 1000 w/m² and AM1.5G. The results show that implementation of flat roughness layer onto cell surface reduces the maximum current inducing on average 2.7% less power with respect to a cell before any encapsulation. The losses of power and, in consequence, the less production of energy are explained by resin light absorption, reflection and partially neutralization of non-reflective coating.

  20. Effect of Current Density on Optical Properties of Anisotropic Photoelectrochemical Etched Silicon (110)

    Science.gov (United States)

    Amirhoseiny, M.; Hassan, Z.; Ng, S. S.

    2012-08-01

    Photoelectrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopies of etched Si (110) at two different current densities were studied. Both samples showed PL peak in the visible spectral range situated from 650 nm to 750 nm. The corresponding changes in Raman spectra at different current density are discussed. The blue shift in the PL and Raman peaks is consequent of the quantum confinement effect and defect states of surface Si nanocrystallites complexes and hydrogen atoms of the photoelectrochemical etched Si (110) samples. The attenuated total reflection (ATR) results show both hydrogen and oxygen related IR modes in the samples which can be used to explain the PL effect.

  1. Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

    International Nuclear Information System (INIS)

    Chen, J.; Sekiguchi, T.; Xie, R.; Ahmet, P.; Chikyo, T.; Yang, D.; Ito, S.; Yin, F.

    2005-01-01

    Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs

  2. Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

    Directory of Open Access Journals (Sweden)

    Batool Eneaze B. Al-Jumaili

    2016-01-01

    Full Text Available Achieving a cheap and ultrafast metal-semiconductor-metal (MSM photodetector (PD for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi based MSM PD with platinum (Pt contact electrodes. Such NPSi samples are grown from n-type Si (100 wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311 lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

  3. Monochromator for synchrotron light with temperature controlled by electrical current on silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Cusatis, Cesar; Souza, Paulo E.N. [Universidade Federal do Parana (LORXI/UFPR), Curitiba, PR (Brazil). Dept. de Fisica. Lab. de Optica de Raios X e Instrumentacao; Franco, Margareth Kobayaski; Kakuno, Edson [Laboratorio Nacional de Luz Sincroton (LNLS), Campinas, SP (Brazil); Gobbi, Angelo; Carvalho Junior, Wilson de [Centro de Pesquisa e Desenvolvimento em Telecomunicacoes (CPqD), Campinas, SP (Brazil)

    2011-07-01

    Full text. doped silicon crystal was used simultaneously as a monochromator, sensor and actuator in such way that its temperature could be controlled. Ohmic contacts allowed resistance measurements on a perfect silicon crystal, which were correlated to its temperature. Using the ohmic contacts, an electrical current caused Joule heating on the monochromator that was used to control its temperature. A simple stand-alone electronic box controlled the system. The device was built and tested with white beam synchrotron light on the double crystal monochromator of the XRD line of LNLS, Laboratorio Nacional de Luz Sincrotron, Campinas. The first crystal of a double crystal monochromator determines the energy that is delivered to a synchrotron experimental station and its temperature instability is a major source of energy and intensity instability. If the (333) silicon monochromator is at theta Bragg near 45 degree the variation of the diffraction angle is around one second of arc per degree Kelvin. It may take several minutes for the first crystal temperature to stabilize at the beginning of the station operation when the crystal and its environment are cold. With water refrigeration, the average overall temperature of the crystal may be constant, but the temperature of the surface changes with and without the white beam. The time used to wait for stabilization of the beam energy/intensity is lost unless the temperature of the crystal surface is kept constant. One solution for keeping the temperature of the monochromator and its environment constant or nearly constant is Joule heating it with a controlled small electrical current flowing on the surface of a doped perfect crystal. When the white beam is on, this small amount of extra power will be more concentrated at the beam footpath because the resistance is lower in this region due to the higher temperature. In addition, if the crystal itself is used to detect the temperature variation by measuring the electrical

  4. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    International Nuclear Information System (INIS)

    Fertig, Fabian; Greulich, Johannes; Rein, Stefan

    2014-01-01

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  5. The characterization of high quality multicrystalline silicon by the electron beam induced current method

    International Nuclear Information System (INIS)

    Chen, J; Sekiguchi, T; Nara, S; Yang, D

    2004-01-01

    Multicrystalline silicon (mc-Si) manufactured by a multi-stage solidification control casting method has been characterized by the electron beam induced current (EBIC) method. The average diffusion length of the ingot was over 250 μm, which was much longer than that of conventional mc-Si. The EBIC study revealed that the electrical activities of grain boundaries (GBs) varied with the ingot position due to the impurity contamination level. The main impurity detected was iron. The concentration of iron in the central position was much lower than that at the bottom and top positions. GBs in the central position showed no significant EBIC contrast at 300 K, suggesting low contamination level. GBs in the top and bottom positions, however, showed strong EBIC contrast at 300 K, suggesting high contamination level. At 100 K, a denuded zone with bright contrast developed around GBs in the top and bottom positions. The existence of the denuded zone suggested that impurities were gettered at the GBs. It was considered that the variation of the diffusion length in the ingot was related to the variation of recombination activities of GBs in the different positions, which mainly depended on the impurity contamination

  6. In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

    Science.gov (United States)

    Choe, Kwang Su.

    An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

  7. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K.; Peng, Hailin; Cui, Yi

    2009-01-01

    fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower

  8. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  9. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    International Nuclear Information System (INIS)

    Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

  10. Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

    Science.gov (United States)

    Narimani, K.; Glass, S.; Bernardy, P.; von den Driesch, N.; Zhao, Q. T.; Mantl, S.

    2018-05-01

    In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10-7 A/μm at Vds = Von = Vgs - Voff = -0.5 V for an Ioff = 1 nA/μm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.

  11. Isotopic identification using Pulse Shape Analysis of current signals from silicon detectors: Recent results from the FAZIA collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Pastore, G., E-mail: pastore@fi.infn.it [Dipartimento di Fisica, Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Gruyer, D. [INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Ottanelli, P. [Dipartimento di Fisica, Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Le Neindre, N. [LPC Caen, Normandie Univ, ENSICAEN, UNICAEN, CNRS/IN2P3, LPC Caen, 14000 Caen (France); Pasquali, G. [Dipartimento di Fisica, Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Alba, R. [INFN LNS, Via S.Sofia 62, 95123 Catania (Italy); Barlini, S.; Bini, M. [Dipartimento di Fisica, Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Bonnet, E. [SUBATECH, EMN-IN2P3/CNRS-Université de Nantes, Nantes (France); GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Borderie, B. [Institut de Physique Nucléaire, CNRS-IN2P3, Univ. Paris-Sud, Université Paris-Saclay, F-91406 Orsay Cedex (France); Bougault, R. [LPC Caen, Normandie Univ, ENSICAEN, UNICAEN, CNRS/IN2P3, LPC Caen, 14000 Caen (France); Bruno, M. [INFN, Sezione di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Casini, G. [INFN Sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Italy); Chbihi, A. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); and others

    2017-07-11

    The FAZIA apparatus exploits Pulse Shape Analysis (PSA) to identify nuclear fragments stopped in the first layer of a Silicon-Silicon-CsI(Tl) detector telescope. In this work, for the first time, we show that the isotopes of fragments having atomic number as high as Z∼20 can be identified. Such a remarkable result has been obtained thanks to a careful construction of the Si detectors and to the use of low noise and high performance digitizing electronics. Moreover, optimized PSA algorithms are needed. This work deals with the choice of the best algorithm for PSA of current signals. A smoothing spline algorithm is demonstrated to give optimal results without requiring too much computational resources.

  12. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  13. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

    Directory of Open Access Journals (Sweden)

    K.E. Kaharudin

    2015-12-01

    Full Text Available This paper presents a study of optimizing input process parameters on leakage current (IOFF in silicon-on-insulator (SOI Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF value. An orthogonal array, main effects, signal-to-noise ratio (SNR and analysis of variance (ANOVA are utilized in order to analyze the effect of input process parameter variation on leakage current (IOFF. Based on the results, the minimum leakage current ((IOFF of SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION value at 434 µA/µm. Both the drive current (ION and leakage current (IOFF values yield a higher ION/IOFF ratio (48.22 x 106 for low power consumption application. Meanwhile, polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors with each of the contributing factor effects percentage of 59% and 25%.

  14. Controlling the Er content of porous silicon using the doping current intensity

    KAUST Repository

    Mula, Guido; Loddo, Lucy; Pinna, Elisa; Tiddia, Maria V; Mascia, Michele; Palmas, Simonetta; Ruffilli, Roberta; Falqui, Andrea

    2014-01-01

    measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes

  15. High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

    Science.gov (United States)

    Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

    2018-05-01

    This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

  16. Short-circuit current density imaging of crystalline silicon solar cells via lock-in thermography: Robustness and simplifications

    International Nuclear Information System (INIS)

    Fertig, Fabian; Greulich, Johannes; Rein, Stefan

    2014-01-01

    Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can be omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current

  17. Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

    Science.gov (United States)

    Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

    2003-05-01

    Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

  18. Effect of etching current density on microstructure and NH3-sensing properties of porous silicon with intermediate-sized pores

    International Nuclear Information System (INIS)

    Li, Mingda; Hu, Ming; Zeng, Peng; Ma, Shuangyun; Yan, Wenjun; Qin, Yuxiang

    2013-01-01

    In this work, porous silicon with intermediate-sized pores (intermediate–PS) was prepared by using galvanostatic electrochemical etching method and the effect toward sensing response characteristics of NH 3 gas was also studied. The morphology and surface chemical bonds of intermediate–PS were characterized by using field emission scanning electron microscope (FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The results showed the intermediate–PS microstructure can be significantly modulated by the etching current density. Moreover, the freshly prepared intermediate–PS surface could achieve reliable passivation after storage in ethanol. Furthermore, the gas-sensing measurements of the intermediate–PS sensors were carried out versus different concentrations of NH 3 . The PS sensor exhibited good NH 3 -sensing performances at room temperature owing to its unique microstructure features, including large specific surface area and highly ordered pore channels. In addition, the conceivable pore formation mechanism as well as gas sensing mechanism was also discussed

  19. Magnetic field dependence of the critical superconducting current induced by the proximity effect in silicon

    International Nuclear Information System (INIS)

    Nishino, T.; Kawabe, U.; Yamada, E.

    1986-01-01

    The magnetic field dependence of the critical superconducting current induced by the proximity effect in heavily-boron-doped Si is studied experimentally. It is found that the critical current flowing through the p-type-Si-coupled junction decreases with increasing applied magnetic field. The critical current can be expressed as the product of three factors: the current induced by de Gennes's proximity effect, the exponential decrease due to pair breaking by the magnetic field, and the usual diffraction-pattern-like dependence on the magnetic field due to the Josephson effect. The second factor depends on the carrier concentration in the semiconductor. The local critical current shows a rapid decrease at the edge of the electrodes

  20. Pulse shape discrimination with silicon detectors using charge and current-sensitive preamplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Hamrita, H.; Rauly, E.; Blumenfeld, Y.; Borderie, B.; Chabot, M.; Edelbruck, P.; Lavergne, L.; Le Bris, J.; Le Neindre, N.; Richard, A.; Rivet, M.F.; Scarpaci, J.A.; Barbey, S.; Becheva, E.; Bzyl, F.R.; D' Esesquelles, P.; Galichet, E.; Lalu, G.; Martinet, G.; Pierre, S. [Institut de Physique Nucleaire, IN2P3-CNRS, 91 - Orsay (France); Legou, Th.; Tillier, J.; Bocage, F.; Bougault, R.; Carniol, B.; Cussol, D.; Etasse, D.; Grevy, S.; Lopez, O.; Tamain, B.; Vient, E. [Caen Univ., LPC, IN2P3-CNRS, ENSI, 14 - Caen (France); Galichet, E. [Conservatoire National des Arts et Metier, 75 - Paris (France); Guinet, D.; Lautesse, Ph. [Villeurbanne Univ., Institut de Physique Nucleaire, IN2P3-CNRS, 69 (France); Lanzalone, G. [Catania Univ., INFN, Laboratori Nazionali del Sud and Dipartimento di Fisica e Astronomia, (Italy); Politi, G. [Catania Univ., INFN, Sezione di Catania and Dipartimento di Fisica e Astronomia (Italy); Rosato, E. [Napoli, Univ., Dipt. di Scienze Fisiche e Sezione INFN (Italy)

    2003-07-01

    For the first time shapes of current pulses from light charged particles and carbon ions are presented. Capabilities for pulse shape discrimination techniques are demonstrated. In this work, charge and current-sensitive preamplifier prototypes for nuclear structure and dynamics experiments have been developed and tested with the aim of improving PSD (pulse shape discrimination) method by studying in detail current signal shapes from particles and ions over a large energy range. Note that current signal shapes have been recently used in atomic cluster studies to identify partitions of carbon cluster fragmentation. The paper is organized as follows. Section 2 is devoted to characterization of preamplifiers. In section 3, results of on beam tests will be presented, discussed and compared to a simple simulation.

  1. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.......Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...

  2. Effects of aging on the structural, mechanical, and thermal properties of the silicone rubber current transformer insulation bushing for a 500 kV substation.

    Science.gov (United States)

    Wang, Zhigao; Zhang, Xinghai; Wang, Fangqiang; Lan, Xinsheng; Zhou, Yiqian

    2016-01-01

    In order to analyze the cracking and aging reason of the silicone rubber current transformer (CT) insulation bushing used for 8 years from a 500 kV alternating current substation, characteristics including Fourier transform infrared (FTIR) spectroscopy, mechanical properties analysis, hardness, and thermo gravimetric analysis have been carried out. The FTIR results indicated that the external surface of the silicone rubber CT insulation bushing suffered from more serious aging than the internal part, fracture of side chain Si-C bond was much more than the backbone. Mechanical properties and thermal stability results illustrated that the main aging reasons were the breakage of side chain Si-C bond and the excessive cross-linking reaction of the backbone. This study can provide valuable basis for evaluating degradation mechanism and aging state of the silicone rubber insulation bushing in electric power field.

  3. Defects influence on short circuit current density in p-i-n silicon solar cell

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Alhan M Mustafa

    2006-01-01

    The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

  4. Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

    Directory of Open Access Journals (Sweden)

    Masaaki Shimatani

    2016-03-01

    Full Text Available Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO2 layer, and metal electrode comprise a metal-oxide-semiconductor (MOS capacitor due to the presence of defects at the interface between the Si substrate and SiO2 layer. The difference in the diffusion time of the intrinsic major carriers (electrons and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.

  5. Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

    Energy Technology Data Exchange (ETDEWEB)

    Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke [Advanced Technology R& D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661 (Japan); Okuda, Satoshi [Advanced Technology R& D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661 (Japan); The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Kanai, Yasushi; Ono, Takao; Matsumoto, Kazuhiko [The Institute of the Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan)

    2016-03-15

    Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due to the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.

  6. Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

    Energy Technology Data Exchange (ETDEWEB)

    Corkish, R.; Altermatt, P.P.; Heiser, G. [Photovoltaics Special Research Centre, University of New South Wales, 2052 Sydney (Australia)

    2001-01-01

    Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

  7. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  8. Space-charge-limited-current diode model for amorphous silicon solar cell degradation

    International Nuclear Information System (INIS)

    Partain, L.D.

    1987-01-01

    A space-charge-limited-current (SCLI) diode model for trap controlled rectification in the dark is extended to a continuous trap distribution for p-i-n a-Si:H solar cells in the light. Light degradation, thermal annealing recovery, and 10% efficient device data are quantitatively fit with i layer, conduction electron concentrations between 1.95 (10 11 ) and 1.90 (10 12 ) cm -3 and band gap trap concentration densities between 7.66 (10 14 ) and 1.14 (10 18 ) cm -3 ev -1 for 0.2 to 0.5 eV below the conduction band edge (E/sub c/). Light exposure increased the trap density at 0.4 eV below E/sub c/ by a factor of 7. Annealing decreased the distance of the peak trap density from E/sub c/ by 0.2 eV. These results agree with trap distributions measured with field effect, DLTS, and ICTS and with theoretical models based on dangling bonds or on defect rearrangements. The model indicates that a minimum peak amplitude of 10 17 cm -3 eV -1 of trapping states is required at about 0.5 eV below E/sub c/ for high fill factors (FF) and open circuit voltages (V/sub oc/). Improved FF values of 0.76 are predicted for trap densities below 10 15 cm -3 eV -1 at 0.2 to 0.4 eV below E/sub c/. Increased V/sub oc/ values of 0.99 V are predicted for a peak trap density of 3.5 (10 17 ) cm -3 eV -1 at 0.5 eV below E/sub c/

  9. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  10. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  11. Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

    Science.gov (United States)

    Wolf, M.; Noel, G. T.; Stirn, R. J.

    1977-01-01

    Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

  12. Thick-shelled, grazer-protected diatoms decouple ocean carbon and silicon cycles in the iron-limited Antarctic Circumpolar Current

    Science.gov (United States)

    Assmy, Philipp; Smetacek, Victor; Montresor, Marina; Klaas, Christine; Henjes, Joachim; Strass, Volker H.; Arrieta, Jesús M.; Bathmann, Ulrich; Berg, Gry M.; Breitbarth, Eike; Cisewski, Boris; Friedrichs, Lars; Fuchs, Nike; Herndl, Gerhard J.; Jansen, Sandra; Krägefsky, Sören; Latasa, Mikel; Peeken, Ilka; Röttgers, Rüdiger; Scharek, Renate; Schüller, Susanne E.; Steigenberger, Sebastian; Webb, Adrian; Wolf-Gladrow, Dieter

    2013-01-01

    Diatoms of the iron-replete continental margins and North Atlantic are key exporters of organic carbon. In contrast, diatoms of the iron-limited Antarctic Circumpolar Current sequester silicon, but comparatively little carbon, in the underlying deep ocean and sediments. Because the Southern Ocean is the major hub of oceanic nutrient distribution, selective silicon sequestration there limits diatom blooms elsewhere and consequently the biotic carbon sequestration potential of the entire ocean. We investigated this paradox in an in situ iron fertilization experiment by comparing accumulation and sinking of diatom populations inside and outside the iron-fertilized patch over 5 wk. A bloom comprising various thin- and thick-shelled diatom species developed inside the patch despite the presence of large grazer populations. After the third week, most of the thinner-shelled diatom species underwent mass mortality, formed large, mucous aggregates, and sank out en masse (carbon sinkers). In contrast, thicker-shelled species, in particular Fragilariopsis kerguelensis, persisted in the surface layers, sank mainly empty shells continuously, and reduced silicate concentrations to similar levels both inside and outside the patch (silica sinkers). These patterns imply that thick-shelled, hence grazer-protected, diatom species evolved in response to heavy copepod grazing pressure in the presence of an abundant silicate supply. The ecology of these silica-sinking species decouples silicon and carbon cycles in the iron-limited Southern Ocean, whereas carbon-sinking species, when stimulated by iron fertilization, export more carbon per silicon. Our results suggest that large-scale iron fertilization of the silicate-rich Southern Ocean will not change silicon sequestration but will add carbon to the sinking silica flux. PMID:24248337

  13. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  14. Browse Title Index

    African Journals Online (AJOL)

    2004): Special Issue 2004, Differential production of immune parameters by mouse strains ... agglutination and complement fixation tests in the field diagnosis ... List All Titles · Free To Read Titles This Journal is Open Access.

  15. Title IX Resource Guide

    Science.gov (United States)

    Office for Civil Rights, US Department of Education, 2015

    2015-01-01

    Title IX of the Education Amendments of 1972 (Title IX) prohibits discrimination based on sex in education programs and activities in federally funded schools at all levels. If any part of a school district or college receives any Federal funds for any purpose, all of the operations of the district or college are covered by Title IX. The essence…

  16. Current signal of silicon detectors facing charged particles and heavy ions; Reponse en courant des detecteurs silicium aux particules chargees et aux ions lourds

    Energy Technology Data Exchange (ETDEWEB)

    Hamrita, H

    2005-07-01

    This work consisted in collecting and studying for the first time the shapes of current signals obtained from charged particles or heavy ions produced by silicon detectors. The document is divided into two main parts. The first consisted in reducing the experimental data obtained with charged particles as well as with heavy ions. These experiments were performed at the Orsay Tandem and at GANIL using LISE. These two experiments enabled us to create a data base formed of current signals with various shapes and various times of collection. The second part consisted in carrying out a simulation of the current signals obtained from the various ions. To obtain this simulation we propose a new model describing the formation of the signal. We used the data base of the signals obtained in experiments in order to constrain the three parameters of our model. In this model, the charge carriers created are regarded as dipoles and their density is related to the dielectric polarization in the silicon detector. This phenomenon induces an increase in permittivity throughout the range of the incident ion and consequently the electric field between the electrodes of the detector is decreased inside the trace. We coupled with this phenomenon a dissociation and extraction mode of the charge carriers so that they can be moved in the electric field. (author)

  17. Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

    2018-04-01

    A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

  18. Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

    KAUST Repository

    Mink, Justine E.

    2013-11-25

    We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  20. 20 CFR 408.931 - How much will we withhold from your title II and title XVI benefits to recover a title VIII...

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 2 2010-04-01 2010-04-01 false How much will we withhold from your title II... and Overpayments Adjustment of Title II Benefits § 408.931 How much will we withhold from your title...-due benefits. (b)(1) We will collect the overpayment from current monthly benefits due in a month...

  1. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  2. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

    International Nuclear Information System (INIS)

    Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

    2014-01-01

    The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

  3. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 229 ... Browse Title Index ... Issue, Title. Vol 14, No 2 ... Vol 15, No 1 (2017), Qualitative and quantitative methods of suicide research in old age, Abstract PDF ... Vol 11, No 2 (2013), Simple Algorithm in the Management of Fetal ...

  4. Browse Title Index

    African Journals Online (AJOL)

    Items 201 - 250 of 488 ... African Journal of Paediatric Surgery. ... Ileocecal valve atresia: Introduction of a new surgical approach ... Vol 4, No 1 (2007), Isolated Bilateral Macrostomia: Case Series and ... Vol 9, No 2 (2012), Laparoscopic inguinal hernia repair in ... List All Titles · Free To Read Titles This Journal is Open Access.

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    African Journals Online (AJOL)

    Items 601 - 650 of 788 ... Browse Title Index ... Issue, Title ... Vol 14, No 1 (2006), Social science research: a critique of quantitative and qualitative methods ... Vol 18, No 1 (2010), Stress among part-time business students: a study in a Ghanaian ...

  6. Title to mining properties

    International Nuclear Information System (INIS)

    Crouch, K.M.

    1976-01-01

    The requirements of the law which must be met in order to create title to an unpatented mining claim and the procedures which should be followed when an attempt is made to determine the title to the claim is acceptable are reviewed

  7. Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+-p diodes

    CERN Document Server

    Makarenko, L F; Yakushevich, H S; Moll, M; Pintilie, I

    2014-01-01

    Using forward current injection with densities in the range 15-30A/cm(2) we can effectively eliminate the radiation-induced boron-oxygen complex, which is the main compensating center in irradiated Si solar cells. It was found that for a given forward current density the elimination rate is decreasing with increasing irradiation dose. Additionally, some evidences have been obtained on the negative-U properties of the radiation-induced boron-oxygen complex.

  8. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  9. Leakage current-induced effects in the silicon microstrip and gas electron multiplier readout chain and their compensation method

    Science.gov (United States)

    Zubrzycka, W.; Kasinski, K.

    2018-04-01

    Leakage current flowing into the charge sensitive amplifier (CSA) is a common issue in many radiation detection systems as it can increase overall system noise, shift a DC baseline or even lead a recording channel to instability. The commonly known leakage current contributor is a detector, however other system components like wires or an input protection circuit may become a serious problem. Compensation of the leakage current resulting from the electrostatic discharge (ESD) protection circuit by properly sizing its components is possible only for a narrow temperature range. Moreover, the leakage current from external sources can be significantly larger. Many applications, especially High Energy Physics (HEP) experiments, require a fast baseline restoration for high input hit rates by applying either a low-value feedback resistor or a high feedback resistance combined with a pulsed reset circuit. Leakage current flowing in the feedback in conjunction with a large feedback resistance supplied with a pulsed reset results in a significant voltage offset between the CSA input and output which can cause problems (e.g. fake hits or instability). This paper shows an issue referred to the leakage current of the ESD protection circuit flowing into the input amplifier. The following analysis and proposed solution is a result of the time and energy readout ASIC project realization for the Compressed Baryonic Matter (CBM) experiment at FAIR (Facility for Antiproton and Ion Research) in Darmstadt, Germany. This chip is purposed to work with microstrip and gaseous detectors, with high average input pulses frequencies (250 kHit/s per channel) and the possibility to process input charge of both polarities. We present measurements of the test structure fabricated in UMC 180 nm technology and propose a solution addressing leakage current related issues. This work combines the leakage current compensation capabilities at the CSA level with high, controllable value of the amplifier

  10. Embroidered Copper Microwire Current Collector for Improved Cycling Performance of Silicon Anodes in Lithium-Ion Batteries.

    Science.gov (United States)

    Breitung, Ben; Aguiló-Aguayo, Noemí; Bechtold, Thomas; Hahn, Horst; Janek, Jürgen; Brezesinski, Torsten

    2017-10-12

    Si holds great promise as an alloying anode material for Li-ion batteries with improved energy density because of its high theoretical specific capacity and favorable operation voltage range. However, the large volume expansion of Si during electrochemical reaction with Li and the associated adverse effects strongly limit its prospect for application. Here, we report on the use of three-dimensional instead of flat current collectors for high-capacity Si anodes in an attempt to mitigate the loss of electrical contact of active electrode regions as a result of structural disintegration with cycling. The current collectors were produced by technical embroidery and consist of interconnected Cu wires of diameter <150 µm. In comparison to Si/Li cells using a conventional Cu foil current collector, the embroidered microwire network-based cells show much enhanced capacity and reversibility due to a higher degree of tolerance to cycling.

  11. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...

  12. Browse Title Index

    African Journals Online (AJOL)

    1986), University Engineering Education and Training in Nigeria: Development, ... Vol 29, No 1 (2010), Use of Energy Method to Simulate the ... of Optimal Rational Composition of Titles Producible from Nigerian Clays ...

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    Items 1 - 50 of 194 ... Journal Home > Advanced Search > Browse Title Index ... Vol 14, No 1 (2000), A functional categoriality of adjectives in ... Vol 1, No 1 (1987), Alienation and affirmation: The humanistic vision of Bessie Head, Abstract PDF.

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    Items 151 - 200 of 879 ... South African Journal of Higher Education. ... Browse Title Index ... in a USA school setting: Merging transition theory with a narrative approach, Abstract ... Citation analysis of theses and dissertations submitted at the ...

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    Items 601 - 650 of 879 ... South African Journal of Higher Education. ... Browse Title Index .... The challenge of thesis supervision in an art university, Abstract ... No 2 (2004), Robert Sternberg's mental self-government theory and its contribution to ...

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    Items 101 - 150 of 533 ... Southern African Linguistics and Applied Language Studies. ... Issue, Title ... Vol 34, No 1 (2016), Book Review: Qualitative-Quantitative Analyses of .... The complex consonants of simple CV-syllables in Zezuru, Abstract.

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    Items 51 - 100 of 346 ... Journal Home > Advanced Search > Browse Title Index ... and hygiene promotion services in Rungwe district, Tanzania, Abstract .... as seen in NIgerian teaching hospital: pattern and a simple classification, Abstract.

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    Items 151 - 200 of 437 ... Journal Home > Advanced Search > Browse Title Index ... prospects and realistic strategies to its implementation in Nigeria\\'s Institute of ... and Communication Technology (ICT) in information dissemination, Abstract.

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    Items 901 - 950 of 1355 ... Journal of Applied Sciences and Environmental Management. ... Journal Home > Advanced Search > Browse Title Index .... Vol 22, No 2 (2018), Performance evaluation of a locally fabricated sawdust fired oven for ...

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    Items 301 - 350 of 788 ... Journal Home > Advanced Search > Browse Title Index ... Vol 26, No 1 (2018), Gender differentials in the perception of .... Vol 25, No 1 (2017), Impact of total quality management on students' academic performance in ...

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    Items 101 - 150 of 465 ... Journal Home > Advanced Search > Browse Title Index ... and twinning data of an igbo kindred during the Nigerian Civil War, Abstract ... on laboratory estimations with special reference to clinical chemistry, Abstract.

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    Items 251 - 300 of 1260 ... Journal Home > Advanced Search > Browse Title Index ... Consumption of ammonia-nitrogen by aob in immobilized batch culture, Abstract PDF .... Vol 9, No 3S (2017): Special Issue, Design an automatic temperature ...

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    Items 101 - 150 of 294 ... Journal Home > Advanced Search > Browse Title Index. Log in or .... S Edwards, M Hlongwane, J Thwala, N Robinson ... Vol 16, No 1 (2017), Infancy of internet cafe: The substitute of ubuntu-padare pedagogy, Abstract.

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    Items 1 - 50 of 130 ... Journal Home > Advanced Search > Browse Title Index. Log in or ... using the technological pedagogical content knowledge(TPACK) framework, Abstract PDF ... Tamara N. Hrin, Dušica D. Milenković, Mirjana D. Segedinac.

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    Items 101 - 150 of 278 ... Journal Home > Advanced Search > Browse Title Index ... drie paradigmas beskou: 'n eenheid, of 'n veelheid van perspektiewe? ... Vol 45, No 1 (2011), Genre pedagogy in the mediation of socially-situated literacies ...

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    Items 551 - 600 of 879 ... Journal Home > Advanced Search > Browse Title Index ... A James, E Ralfe, L van Laren, N Ngcobo ... 1 (2011), Recognition of prior learning in promoting lifelong learning: A pedagogy of hope or a shattering of dreams?

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    Items 451 - 500 of 533 ... Journal Home > Advanced Search > Browse Title Index .... for past tense forms in Northern Sotho: verb stems with final 'm' and 'n', Abstract ... in an academic writing class: Implications for a dialogic pedagogy, Abstract.

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    Items 101 - 150 of 183 ... Journal Home > Advanced Search > Browse Title Index ... Vol 61 (2017), New interventions and sustainable solutions: .... Vol 35 (2011), Resurgence of tribal levies: Double taxation for the rural poor, Abstract PDF.

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    Items 1 - 50 of 736 ... Journal Home > Advanced Search > Browse Title Index ... Vol 5 (2008), A Contagious Malady: The Human Quest for Truth through Religion, Abstract ... A Study of Politeness Strategies Used by the National University of ...

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    Items 101 - 150 of 414 ... Journal Home > Advanced Search > Browse Title Index. Log in or ... of an algebraic function for the permutation of truth table columns, Abstract ... appraisal and productivity levels in selected Nigerian universities, Abstract.

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    African Journals Online (AJOL)

    Items 101 - 150 of 879 ... Journal Home > Advanced Search > Browse Title Index ... Vol 20, No 4 (2006), Assessing academic potential for university admission: ... Vol 16, No 2 (2002), Book Review: Rethinking truth by Higgs, P & Smith, J, Details.

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    Items 1 - 50 of 165 ... Journal Home > Advanced Search > Browse Title Index ... Vol 43 (2011), Assessment of the Learning Commons takeoff at the University of ... the archive of South Africa's Truth and Reconciliation Commission, Abstract.

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    Items 1 - 50 of 644 ... Journal Home > Advanced Search > Browse Title Index. Log in or ... Ethics review n international health research: quality assurance or bureaucratic nightmare? Details ... Audit of Management of Open Fractures, Details PDF.

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    Items 651 - 700 of 1199 ... Issue, Title ... Vol 5, No 1 (2011), Motivation, an Essential Ingredient for Optimal Performance in Emerging Markets, Abstract PDF ... Vol 3, No 5 (2009), Multinational transfer pricing and international taxation: what, why, ...

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    Items 51 - 100 of 153 ... Issue, Title. Vol 9, No 2 (2006):, Effects of efficient water utilisation on water resources development in Swaziland under climate change, Abstract .... Ethical, Indigenous and Socio-Economic Perspectives, Abstract.

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    Items 1 - 50 of 98 ... Journal Home > Advanced Search > Browse Title Index ... model for the continued professionalisation of student affairs in Africa, Abstract PDF ... Vol 2, No 2 (2014), Book Review: How College Affects Students, A Third decade ...

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    Items 1 - 50 of 76 ... Journal Home > Advanced Search > Browse Title Index ... Vol 4, No 1 (2011), Automation of AutoCAD for Detailing of Reinforced .... Vol 10, No 1 (2017), Housing data base for sustainable housing provision, Abstract PDF.

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    Items 1 - 50 of 147 ... Journal Home > Advanced Search > Browse Title Index .... Library (TEEAL) Database among faculty members in Federal University, ... Vol 5, No 2 (2014), Effects of corporate culture on the implementation of automation in ...

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    Items 1 - 41 of 41 ... Issue, Title ... Vol 1, No 3 (2004): Special Edition, Assessment of the quality and reserves of Bat ... Vol 1, No 1 (1997), Bovine dermatophilosis in Zambia: epidemiology, socio-economic impacts and future perspectives, Abstract.

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    Items 701 - 750 of 808 ... Issue, Title ... Vol 58, No 2 (2010), Short Communicaton: The socio-economic impact of helminth infections and the ... Vol 62 (2014): Special Edition, Special edition summarizing the scientific discourse which took place ...

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    Items 351 - 391 of 391 ... Issue, Title ... Vol 2, No 3 (1999): Special Edition, The efficacy of low volume application of roundup ... Vol 1, No 1 (1998), The relationships among National Socio-Economic Indicators and Child Health Statistics, Abstract.

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    Items 201 - 250 of 531 ... Journal Home > Advanced Search > Browse Title Index ... thermal conductivity and viscosity in a flat plate solar collector, Abstract PDF .... similarity method in unsteady two-dimensional MHD boundary layer on the body ...

  3. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  4. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  5. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Science.gov (United States)

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  6. Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

    International Nuclear Information System (INIS)

    Yurkov, S N; Mnatsakanov, T T; Levinshtein, M E; Cheng, L; Palmour, J W

    2014-01-01

    The specific features of the temperature and bias dependences of the switch-on gate current in SiC thyristors are examined analytically for two possible switching mechanisms. The so-called γ-mechanism, which is highly typical of the conventional Si thyristors, is characterized by very weak temperature and bias dependences. By contrast, the so-called α-mechanism, which is very characteristic of SiC thyristors, is highly sensitive to changes in temperature and bias. If the thyristor is switched on by the α-mechanism, the switch-on gate current density decreases very steeply with increasing temperature. As a result, the thyristor can lose its working capacity at elevated temperatures due to the instability against even very weak impacts. With decreasing the bias voltage U a , the gate switch-on current increases very steeply, which can make switching the thyristor on difficult. The unintentional shunting, which is apparently present in high-voltage SiC thyristors, causes the transition from the α- to the γ-mechanism at elevated temperatures and high biases. It can be supposed that introduction of a controllable technological shunting of the emitter–thin base junction allows stabilization of the temperature and bias parameters of SiC thyristors. The analytical results are confirmed by computer simulations performed in wide temperature and bias ranges for a 4H-SiC thyristor of the 18 kV class. (paper)

  7. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 1255 ... ... Response For A Bifacial Silicon Solar Cell Under A Constant Magnetic Field .... Partial melting mechanism and mantle peridotite chemical ... A mathematical model for excess work load allowance in Nigeria Universities.

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    African Journals Online (AJOL)

    Type Silicon Single Crystals Of Different Surface Orientations, Abstract PDF. B Guel. Vol 8, No 1 (2002), Electron - positron correlation energy due to ... using surficial resistivity measurements: A case study from parts of ...

  9. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  10. Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon

    CERN Document Server

    Arguirov, T; Kittler, M; Reif, J

    2002-01-01

    The temperature dependence of D-band and band-to-band (BB) luminescence was measured in EFG samples between 80 K and room temperature for defects/dislocations presenting different amounts of contamination. The contamination density was estimated from the temperature behaviour of the electron-beam-induced current contrast, ranging between about 10 sup 4 and 10 sup 6 impurities cm sup - sup 1 dislocation length. The D1 line became already visible at room temperature but its intensity was found to exhibit a maximum at about 150 K. D2, D3 and D4 start to show up at about 250, 190 and 170 K, respectively, and increase their intensities upon lowering temperature. At room temperature the width of the D1 line is broad and becomes narrower upon lowering the temperature. D2 shows the opposite behaviour. The intensities of D1 and D2 were observed to show strong variations across the sample, whereas this was not observed for the pair D4/D3. In particular, the origin of the lines D1 and D2 is still far from being understo...

  11. X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor

    International Nuclear Information System (INIS)

    Ariyoshi, Tetsuya; Funaki, Shota; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

    2017-01-01

    To reduce the radiation dose required in medical X-ray diagnoses, we propose a high-sensitivity direct-conversion-type silicon X-ray sensor that uses trench-structured photodiodes. This sensor is advantageous in terms of its long device lifetime, noise immunity, and low power consumption because of its low bias voltage. With this sensor, it is possible to detect X-rays with almost 100% efficiency; sensitivity can therefore be improved by approximately 10 times when compared with conventional indirect-conversion-type sensors. In this study, a test chip was fabricated using a single-poly single-metal 0.35 μm process. The formed trench photodiodes for the X-ray sensor were approximately 170 and 300 μm deep. At a bias voltage of 25 V, the absorbed X-ray-to-current signal conversion efficiencies were 89.3% (theoretical limit; 96.7%) at a trench depth of 170 μm and 91.1% (theoretical limit; 94.3%) at a trench depth of 300 μm. (author)

  12. Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

    International Nuclear Information System (INIS)

    Chen Jun; Yang Deren; Xi Zhenqiang; Sekiguchi, Takashi

    2005-01-01

    The impacts of grain boundary (GB) character and impurity contamination level on the hydrogen passivation of GBs in multicrystalline silicon (mc-Si) were studied by means of an electron-beam-induced current (EBIC) technique. In mc-Si with a low contamination of Fe, the 300K EBIC contrast of all kinds of GBs in the H-passivated state was weak and similar to that in the as-grown state. The 100K EBIC contrast of Σ (Σ=3, 9, and 27) GBs decreased about 75-80%, whereas that of random and small-angle GBs decreased about 35-40%. Due to the different impurity gettering ability of different GBs, the variation in 100K EBIC contrast has suggested that the effect of H-passivation depends on both the GB character and impurity contamination level. In the mc-Si with heavy contamination of Fe, at both 300 and 100K, the EBIC contrast of both Σ (Σ=3) and random GBs decreased but the ratio was <40%, suggesting that the H-passivation is mainly affected by the impurity contamination level. on

  13. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  14. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2005-01-01

    This is the 31st revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13,104 journal titles, 2,078 regularly scanned journals and 561 key journals. It was last updated in February 2005. The purpose of this report is to provide descriptive cataloguers with a standard entry for the full title of a journal. In addition to the full journal title, the ISSN (International Standard Serial Number), administered by the ISSN International Centre, Paris, France, and/or CODEN, assigned by Chemical Abstracts Service, USA, are given in this manual. In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part III, all journals that are regularly scanned by INIS Centers are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part IV, all journals that are regularly scanned by INIS Centers are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part V, all journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part VI, all journals are sorted alphabetically under their title. The name of the

  15. INIS: Authority list for journal titles

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-03-01

    This is the 31st revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13,104 journal titles, 2,078 regularly scanned journals and 561 key journals. It was last updated in February 2005. The purpose of this report is to provide descriptive cataloguers with a standard entry for the full title of a journal. In addition to the full journal title, the ISSN (International Standard Serial Number), administered by the ISSN International Centre, Paris, France, and/or CODEN, assigned by Chemical Abstracts Service, USA, are given in this manual. In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part III, all journals that are regularly scanned by INIS Centers are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part IV, all journals that are regularly scanned by INIS Centers are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part V, all journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part VI, all journals are sorted alphabetically under their title. The name of the

  16. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2006-01-01

    This is the 32nd revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13,231 journal titles, 2,125 regularly scanned journals and 555 key journals. It was last updated in February 2006. The purpose of this report is to provide descriptive cataloguers with a standard entry for the full title of a journal. In addition to the full journal title, the ISSN (International Standard Serial Number), administered by the ISSN International Centre, Paris, France, and/or CODEN, assigned by Chemical Abstracts Service, USA, are given in this manual. In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part III, all journals that are regularly scanned by INIS Centres are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part IV, all journals that are regularly scanned by INIS Centres are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. In Part V, all journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. In Part VI, all journals are sorted alphabetically under their title. The name of the

  17. The History, Uses, and Abuses of Title IX. 2016 Bulletin

    Science.gov (United States)

    American Association of University Professors, 2016

    2016-01-01

    This report, an evaluation of the history and current uses of Title IX, is the result of a joint effort by a subcommittee that included members of the AAUP's Committee A on Academic Freedom and Tenure and the Committee on Women in the Academic Profession. The report identifies tensions between current interpretations of Title IX and the academic…

  18. Browse Title Index

    African Journals Online (AJOL)

    Issue, Title. Vol 25, No 2 (2005), Yam-based farm practices and nematode problems in stored yams (Dioscorea spp.) in Ghana, Abstract PDF. CK Kwoseh, RA Plowright, J Bridge, R Asiedu. Vol 27, No 2 (2007), Yield, irrigation production efficiency and economic returns of broccoli under variable drip irrigation and lateral ...

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    African Journals Online (AJOL)

    Items 51 - 68 of 68 ... Issue, Title. Vol 12, No 1-2 (2009), Sécurité et ordre politique au Cameroun : entre dynamiques internes et connexions internationales, Abstract PDF. BEP Chantal. Vol 6, No 1-2 (2003), Self-Determination, Nationalism, Development and Pan-Africanism Stuck on the Runway: Are Intellectuals to be Blamed ...

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    African Journals Online (AJOL)

    Items 551 - 600 of 1463 ... Issue, Title. Vol 15, No 2 (2015), Evaluation of the diagnostic performance and operational characteristics of four rapid immunochromatographic syphilis tests in Burkina Faso, Abstract PDF. FY Bocoum, H Ouedraogo, G Tarnagda, A Kiba, S Tiendrebeogo, F Bationo, B Liestman, S Diagbouga, ...

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    African Journals Online (AJOL)

    Items 351 - 400 of 400 ... Issue, Title. Vol 9, No 1 (2010), Soft tissue sarcoma of the thigh: Need for angiography in the developing, Abstract PDF. IA Adigun, GA Rahman, KO Ogundipe. Vol 3, No 1 (2004), Spectrum of rheumatic heart disease in Zaria, Northern Nigeria, Abstract. SS Danbauchi, MA Alhassan, SO David, ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 183 ... Issue, Title. Vol 62 (2017), #SchoolsOnFire: Criminal justice responses to protests that impede the right to basic education, Abstract PDF. Ann Skelton, Martin Nsibirwa. Vol 45 (2013), 'Pale Face'/'Pointy Face: SA Criminology in Denial, Abstract PDF. S Henkeman. Vol 59 (2017), Aluta continua: Police ...

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    African Journals Online (AJOL)

    Items 1 - 14 of 14 ... Issue, Title. Vol 2, No 1 (2009), Auditory and Respiratory Health Disorders Among Workers in an Iron and Steel Factory, Abstract. GM Abdel – Rasoul, OAE Mahrous, ME Abou Salem, MA Al-Batanony, HK Allam. Vol 2, No 1 (2009), Effect of An Educational Program About Medical Waste Management on ...

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    African Journals Online (AJOL)

    Items 51 - 100 of 391 ... Journal Home > Advanced Search > Browse Title Index ... Efficacy of four Rodenticides on the Ghanaian Market, Abstract ... Vol 2, No 1 (2000):, Determination of some wear elements in used car engine oil and oil filter ...

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    African Journals Online (AJOL)

    Items 251 - 300 of 490 ... Issue, Title. Vol 6, No 2 (2010), Knowledge and patterns of use of highly active antiretroviral therapies in HIV management at Abuja, Nigeria, Abstract. Jill I Okpalugo, US Inyang, K Ibrahim, F Anita, Chinwe V Ukwe, NC Aguwa. Vol 5, No 4 (2009), Knowledge and utilization of the acts in two major ...

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    African Journals Online (AJOL)

    Items 9951 - 10000 of 11090 ... Issue, Title. Vol 10, No 36 (2011), Study of heavy metals bioaccumulation in the process of vermicomposting, Abstract PDF. MM Aleagha, G Ebadi. Vol 10, No 45 (2011), Study of malondialdehyde (MDA) content, superoxide dismutase (SOD) and glutathione peroxidase (GSH-Px) activities in ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 412 ... Issue, Title. Vol 32, No 2 (2013), Seinsverständnis and meaning in Heidegger, Abstract. Rafael Winkler. Vol 21, No 3 (2002), A defense of peace as a human right, Abstract. Patrick Hayden. Vol 26, No 2 (2007), A Kantian stance on teleology in biology, Abstract. AA Cohen. Vol 30, No 1 (2011), A Likely ...

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    African Journals Online (AJOL)

    Items 251 - 300 of 328 ... Issue, Title. Vol 7, No 1 (2003), Sexual Harassment in Academia in Nigeria: How Real? Details PDF. Olugbenga Jelil Ladebo. Vol 8, No 2 (2004), Shaping the internet for match-making/dating: a challenge for the contemporary Nigerian family institution, Abstract PDF. Wale Adesina. Vol 6, No 1 (2002) ...

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    African Journals Online (AJOL)

    Items 51 - 73 of 73 ... Journal Home > Advanced Search > Browse Title Index ... Vol 13 (2006), The ageing eye” functional changes from cradle to gray: A ... Vol 12 (2005), The evaluation of vision in children using monocular vision acuity and ...

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    African Journals Online (AJOL)

    Issue, Title. Vol 22, No 2 (2008), Voltammetric determination of heparin based on its interaction with malachite green, Abstract PDF. Xueliang Niu, Weili Zhang, Na Zhao, Wei Sun. Vol 22, No 2 (2008), Voltammetric determination of l-cysteic acid on a 1-[4-(ferrocenyl-ethynyl)phenyl]-1-ethanone modified carbon paste ...

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    African Journals Online (AJOL)

    Items 201 - 250 of 577 ... Issue, Title. Vol 20, No 2 (2003), Emergency Contraception: A Global Overview of Knowledge, Attitudes and Practices Among Providers, Abstract PDF. Deborah Haggai. Vol 23 (2006):, Emergency laparotomy for peripartum haemorrhage in Bida North Central Nigeria, Abstract PDF. Sunny Abiodun O ...

  12. Browse Title Index

    African Journals Online (AJOL)

    Items 201 - 250 of 11090 ... Issue, Title. Vol 12, No 49 (2013), In vitro regeneration of selected Kenyan papaya (Carica papaya L.) lines through shoot tip culture, Abstract PDF. Naomi Nzilani Mumo, Fredah Karambu Rimberia, George Edward Mamati, Agnes Wanjiru Kihurani. Vol 7, No 12 (2008), In vitro regeneration of Turkish ...

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    African Journals Online (AJOL)

    Items 151 - 200 of 221 ... Issue, Title ... Vol 38 (2010), Soft drink consumption of Grade 4 and Grade 7 learners in the Wynberg area, City of Cape Town, South .... Vol 42 (2014), The meaning of food for obese men: a qualitative study, Abstract PDF.

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    African Journals Online (AJOL)

    Items 101 - 150 of 1215 ... Journal Home > Advanced Search > Browse Title Index. Log in or ... Vol 12, No 1 (2018), Analysis of the effects of frequent strikes on academic performance of students in universities in Nigeria: Edo State as a focal point, Abstract PDF ... Vol 6, No 1 (2012), Appraisal as a Determinant for Adequate ...

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    African Journals Online (AJOL)

    Items 1 - 20 of 20 ... Issue, Title. Vol 9, No 2 (2000), Age dependent changes in the hypothalamic amino acid neurotransmitters in response to nicotine, Abstract. NM Radwan, NA Ahmed, YAM Aly. Vol 9, No 2 (2000), Autoantibodies, ocular and auditory changes in patients with vitiligo, Abstract. AE Fathia, EA Nagwa, ...

  16. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 76 of 76 ... Issue, Title. Vol 6, No 1 (2013), Integrating Sustainability into the Real Estate Valuation Process: A Nigerian Perspective, Abstract PDF. G K Babawale, B A Oyalowo. Vol 5, No 1 (2012), Internalising internationa valuation standards: Relevance and applicability issues in the Nigerian context, Abstract PDF.

  17. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 201 ... Issue, Title. Vol 12, No 1 (2006), Conservative management of cervical ectopic pregnancy: case report, Abstract PDF. TD Naidoo, MR Ramogale, J Moodley. Vol 18, No 2 (2012), Contraceptive use and associated factors among South African youth (18 - 24 years): A population-based survey, Abstract ...

  18. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 183 of 183 ... Issue, Title. Vol 9, No 1 (2004), Socio-economic constraints affecting youths involvement in national economic development, Abstract. Josephine U Nwagwu. Vol 12, No 2 (2007), Stabilizing Potential Of Cement-Fly Ash Mixture On Expansive Clay Soil, Abstract. OO Amu, AB Fajobi, SO Afekhuai. Vol 11 ...

  19. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 76 ... Issue, Title. Vol 16, No 2 (2006), A profile of the theatre procedures in paediatrict ophthalmic practice, Abstract. E O Onwasigwe. Vol 15, No 2 (2005), Abdominal cocoon, Abstract. Abdulrasheed K Adesunkanmi, Tajudeen A Badmus, Olukayode Ogundoyin, Akinwumi B Ogunrombi. Vol 18, No 1 (2008) ...

  20. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 647 ... Issue, Title. Vol 13, No 2 (2010), 'N toekomstige perspektief op grondwetlike stabiliteit, Abstract PDF. F.W de Klerk. Vol 18, No 5 (2015), Cloete murray and Another v Firstrand bank ltd t/a Wesbank [2015] ZASCA 39A, Abstract PDF. M Laubscher. Vol 15, No 5 (2012), Cave Pecuniam: Lawyers as ...

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    African Journals Online (AJOL)

    Items 1 - 15 of 15 ... Issue, Title. Vol 1, No 1 (2008), Assessment Of Ophthalmic Patients' Satisfaction In Owo, Abstract. CO Omolase, CO Fadamiro, BO Omolase, AS Aina, EO Omolade. Vol 3, No 1 (2010), Case Report: Strongyloides stercoralis coinfection in a Nigerian with HIV. Abstract. A.A Oyekunle, R.A.A Bolarinwa, O.A ...

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    African Journals Online (AJOL)

    Items 1 - 15 of 15 ... Issue, Title. Vol 1, No 1 (2007), An Action Five Strategy For Bridging The Gender Gap In Academic Research Activities In African Universities. The Case of Nigeria, Abstract PDF. DN Okorie, OG Agabi, CM Uche. Vol 1, No 1 (2007), Book Review: Confronting sexual harassment in Ghanaian Universities ...

  3. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 93 ... Issue, Title. Vol 5 (2013), A cost-effective Geographic Information Systems for Transportation (GIS-T) application for traffic congestion analyses in the Developing World, Abstract PDF. E Agyemang. Vol 3 (2011), A Historical and Gendered Perspective on HIV / AIDS in Botswana, Abstract PDF. J Hesselberg ...

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    African Journals Online (AJOL)

    Items 201 - 250 of 327 ... Issue, Title. Vol 10, No 4 (2016), Omphalocoeles: A decade in review, Abstract PDF. S Singh, A Madaree. Vol 2, No 4 (2008), Ortner syndrome, Abstract PDF. E Meyer, NE Jones, LJ Zühlke. Vol 10, No 3 (2016), Outcome of children admitted to a general highcare unit in a regional hospital in the ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 814 ... Issue, Title. Vol 21, No 2 (2016), A 10 years trend of peptic ulcer disease and other gastrointestinal disorders in northern Uganda, Abstract PDF. T.R. Okello, D.M. Ogwang, I Pecorella. Vol 21, No 2 (2016), A 2-years description of traumatic brain injury admissions in Tikur Anbessa Specialized Hospital ...

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    African Journals Online (AJOL)

    Items 301 - 350 of 577 ... Issue, Title. Vol 32, No 2 (2015), Late arrival in hospital during labour: any correlation with materno-foetal outcome? The state specialist hospital, Asubiaro, Osogbo Experience. Abstract PDF. OO Awolola. Vol 30, No 2 (2013), Late Reproductive Effects of Cancer Treatment in Young People, Abstract ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 319 ... Issue, Title. Vol 23, No 2 (2016), Carica papaya juice enhanced in-vitro cell proliferation better than freeze-dried PBS extract using scratch assay, Abstract. A.B. Nafiu, E Abdulaziz, M.T. Rahman. Vol 23, No 2 (2016), A comparative study of the ownership and utilization of insecticide treated nets in ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 52 ... Issue, Title. Vol 15 (2000), Ammi analysis of maize yield trials in South-Western Nigeria, Abstract. SR Ajibade, BA Ogunbodede. Vol 20 (2006), Association of yield with some agronomic characters in potatoes in a cool mid-altitude location, Abstract. CO Amadi, EE Ene Obong. Vol 20 (2006), Casein (CSN3) ...

  9. Browse Title Index

    African Journals Online (AJOL)

    Items 201 - 240 of 240 ... Issue, Title. Vol 8, No 4 (2005), Status equipment in primary health centres of Tafa Lga, North Central Nigeria, Abstract. MN Sambo, I Lewis, K Sabitu. Vol 10, No 1 (2007), Stroke at a tertiary medical institution in Northern Nigeria: Patients\\' profile and predictors of outcome, Abstract. KW Wahab, MU ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 249 ... Issue, Title. Vol 10, No 1 (2010), Ye Shakoch Chilot (the court of the sheikhs): A traditional institution of conflict resolution in Oromiya zone of Amhara regional state, Ethiopia, Abstract PDF. M Zeleke. Vol 15, No 3 (2015), A comparative analysis of the Post- Arab Spring National Dialogues in Tunisia and ...

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    African Journals Online (AJOL)

    Items 101 - 150 of 670 ... Issue, Title. Vol 9, No 2 (2012), Business Planning and the Economic Growth of Small and Medium Scale Enterprises in Nigeria, Abstract. Egbe Aneozeng A, Ejoh Ndifon Ojong, Obo Ekpenyong Bassey. Vol 11, No 2 (2014), Calabar Humaphors: An Analysis of Selected Jokes in Nigerian Stand Up ...

  12. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 107 of 107 ... Issue, Title. Vol 6, No 1 (2017), The Ophthalmic status manifestations of nutritional and lifestyle disorders of men in a peri urban community in Ghana, Abstract PDF. F. Vuvor, M. Steiner-Asiedu, F.K. Saalia. Vol 2, No 1 (2013), Thyroid Disorders in Accra, Ghana: A Retrospective Histopathological Study ...

  13. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 165 ... Issue, Title. Vol 30 (2005), Digitisation projects at the University of Cape Town Libraries, Abstract. Janine Dunlop, Lesley Hart. Vol 24 (2002), DISA: an African Perspective on Digital Technology, Abstract. Michele Pickover, Dale Peters. Vol 30 (2005), Doing it right – or are we? Basic principles in the ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 251 ... Issue, Title. Vol 55 (2014), 20 Years of democracy: Transforming the public service, Abstract. A Ruiters. Vol 63 (2016), Zemk' iinkomo magwala ndini! Wake up! The cows are being stolen! Abstract. Sipho Pityana. Vol 56 (2014), A layperson's guide to Nene's budget statement, Abstract. B Turok.

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    African Journals Online (AJOL)

    Items 1 - 50 of 1007 ... Issue, Title. Vol 11, No 1 (1997), (+)-Floribundone 3 from the pods of Senna septemtrionalis, Details PDF. Gizachew Alemayehu, Bekuretsion Woldeyesus, Berhanu M Abegaz. Vol 14, No 1 (2000), 11α-Hydroxy muzigadiolide, a novel drimane sesquiterpene from the stem bark of warburgia ugandensis ...

  16. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 356 ... Issue, Title. Vol 27, No 3 (2014), A desire for weight loss in season increases disordered eating behaviour risk and energy deficiency in athletes, Abstract PDF. HH Wright, R Ford, CR Botha. Vol 29, No 3 (2016), A review of infant and young child feeding practice in hospital and the home in KwaZulu-Natal ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 66 ... Issue, Title. Vol 48, No 1-2 (2015), A hierarchical modeling of information seeking behavior of school teachers in rural areas of Nigeria, Abstract. Manir Abdullahi Kamba. Vol 49, No 1-2 (2016), Access to electronic information resources by students of federal college of education in south east Nigeria ...

  18. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 150 of 683 ... Issue, Title. Vol 54, No 1 (2006), Bovine tuberculosis survey in urban and peri urban dairy farms in coastal humid region of Tanga, Tanzania, Abstract. ES Swai, G Shirima, S Bwanga, W Moshy. Vol 60, No 3 (2012), Browsing capacity and nutritive value of indigenous browses in a tropical Coastal ...

  19. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 387 ... Issue, Title. Vol 15, No 2 (2015), Introduction to Christian philosophy, Abstract. Charles Ogundu Nnaji. Vol 8, No 2 (2006), Is Quantum Mechanics a Complete Theory?: A Philosophical Defense of Einstein's Position, Abstract. U O Egbai. Vol 10, No 1 (2007), Jesus in Africa, Abstract. FF Edet. Vol 10, No ...

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    African Journals Online (AJOL)

    Items 51 - 98 of 98 ... Issue, Title. Vol 4, No 1 (2016), First-year seminar intervention: Enhancing firstyear mathematics performance at the University of Johannesburg, Abstract PDF. Melanie Jacobs, Estherna Pretorius. Vol 5, No 2 (2017), From Inky Pinky Ponky to Improving Student Understanding in Assessment: Exploring the ...

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    African Journals Online (AJOL)

    Items 151 - 167 of 167 ... Issue, Title ... Vol 2, No 2 (2013), Women and the Leadership Paradigm: Bridging the Workplace Gender-Gap in Nigeria, Abstract PDF ... Vol 5, No 2 (2016), Women's participation and gender issues in local governance ...

  2. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 110 ... Issue, Title. Vol 10, No 1 (2003), Incidence and Determinants of Child Labour in Nigeria: Implications for Poverty Alleviation, Abstract. Benjamin Chiedozie Okpukpara, Ngozi Odurukwu. Vol 20, No 1 (2013), Inflation and capacity utilisation in Nigeria's manufacturing sector, Abstract. OA Ishola. Vol 19, No ...

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    African Journals Online (AJOL)

    Items 251 - 300 of 367 ... Issue, Title. Vol 43 (2014), Some interlingual communicative challenges for foreign African interpreters in South African courtrooms, Abstract PDF. SE Usadolo, E Kotze. Vol 29 (1996), South Africa's new language policy in the context of the organisation for African unity's language plan of action for ...

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    African Journals Online (AJOL)

    Items 1 - 50 of 89 ... Issue, Title ... of two-phased approaches to load balancing in cloud computing, Abstract ... Vol 19, No 1 (2012), Assessing Network Services and Security in ... Vol 23, No 1 (2016), Cloud model construct for transaction-based ...

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    African Journals Online (AJOL)

    Items 51 - 100 of 198 ... Issue, Title ... Vol 13, No 1 (2015), Biometric Enhancement of Home and Office Security to Reduce Assassinations in Nigeria, Abstract PDF ... Vol 9, No 1 (2013), Cloud Computing: Key to IT Development in West Africa ...

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    African Journals Online (AJOL)

    Items 151 - 198 of 198 ... Issue, Title ... scheme for QoS and energy conservation in cloud computing, Abstract PDF ... Vol 9, No 1 (2013), Performance and Security Evaluation of ... Vol 18, No 1 (2017), Reducing capital flight through local cloud ...

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    African Journals Online (AJOL)

    Items 251 - 300 of 652 ... Journal Home > Advanced Search > Browse Title Index ... Vol 18, No 7 (2015), Introduction to virtual property: Lex virtualis ipsa ... Vol 17, No 1 (2014), Legal challenges relating to the commercial use of outer space, with ...

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    African Journals Online (AJOL)

    Items 151 - 170 of 170 ... Issue, Title. Vol 20, No 2 (2004), The Impact of Mine Closures on Rural Population Dynamics: The Case of Zhombe in Kwekwe District, Midlands Province, Zimbabwe, Abstract. Crescentia Madebwe. Vol 29, No 1 (2013), The Influence of Organisational Culture and Job Satisfaction on Intentions to ...

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    African Journals Online (AJOL)

    Items 101 - 150 of 263 ... Issue, Title. Vol 1, No 2 (2002), Effect of Light and Darkness on Packed Cell Volume in the Rat, Abstract. A. A. OSINUBI, F. I. DURU, C. C. NORONHA, A. O. OKANLAWON. Vol 4, No 1 (2005), Effect of Marijuana Smoking on Blood Chemistry and Serum Biogenic Amines Concentrations in Humans ...

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    African Journals Online (AJOL)

    Items 751 - 800 of 846 ... Journal Home > Advanced Search > Browse Title Index ... Vol 9, No 3S (2017): Special Issue, The effect of torrefaction on oil palm ... core competency skills of IRBM tax auditors towards their performance, Abstract PDF ... of exchange rates behavior in Malaysia by using NATREX model, Abstract PDF.

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    African Journals Online (AJOL)

    Issue, Title. Vol 38, No 1 (2004), Book Review: Unexpected Voices – Theory, Practice and Identity in the Writing Classroom. Abstract. Charly Dyers. Vol 38, No 1 (2004), Book Review: Shelley Angelil-Carter: Stolen Language? Plagiarism in Writing. Abstract. Elizabeth de Kadt. Vol 37, No 1 (2003), Book Review: The Green ...

  12. Browse Title Index - AJOL

    African Journals Online (AJOL)

    Items 501 - 508 of 508 ... Issue, Title. Vol 33, No 2 (2011), Visuele stereotipering van sportvroue in die sportmedia, Abstract. M Brandt, A Carstens. Vol 30, No 1 (2008), Volunteers\\' perceptions of benefits derived from volunteering: an empirical study, Abstract. J Surujlal, M Dhurup. Vol 33, No 1 (2011), Was the Conconi test ...

  13. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 108 of 108 ... Issue, Title. Vol 8, No 2 (2016), The status and challenges of clinical informatics development in South Africa, Abstract PDF. Abayomi Kehinde Owolabi, Thokozani Patrick Mhlongo, Neil Evans. Vol 4, No 1 (2012), The stuttering implementation of language policies in the South African education system ...

  14. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 100 ... Issue, Title. Vol 28 (2013): Special Issue, Occurrence of Cryptosporidium and Giardia in domestic animals in peri-urban communities of Kafue district, Zambia, Abstract. J Siwila, IGK Phiri, HI Enemark, M Nchito, A Olsen. Vol 26, No 1 (2009), Occurrence of foot and mouth disease serotypes in Tanzania: A ...

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    African Journals Online (AJOL)

    Items 801 - 850 of 11090 ... Issue, Title. Vol 10, No 61 (2011), Analysis of chemical constituents in medicinal plants of selected districts of Pakhtoonkhwa, Pakistan, Abstract PDF. I Hussain, R Ullah, J Khan, N Khan, M Zahoor, N Ullah, MuR Khattak, FA Khan, A Baseer, M Khurram. Vol 10, No 77 (2011), Analysis of chloroplast ...

  16. Browse Title Index

    African Journals Online (AJOL)

    Items 501 - 550 of 670 ... Issue, Title. Vol 11, No 4 (2014), Strategies for Fostering Creativity Among Business Education Graduates in Nigeria, Abstract. BO Nwosu, KE Ojo. Vol 13, No 1 (2015) ... Vol 10, No 1 (2013), The Challenges Facing Accounting Education: The Nigerian Experience, Abstract. OR Okolie. Vol 5 (2008), The ...

  17. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 150 of 198 ... Issue, Title ... Vol 7, No 1 (2013), Enterprise Cloud Adoption: Leveraging on the Business ... Load Balancing And Job Scheduling In Cloud Computing ... Vol 13, No 1 (2015), ICT-Based Framework for Improved Food Security in Nigeria ... Vol 5, No 1 (2012), IT-Based Solutions to the Electoral System in ...

  18. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 150 of 1117 ... Journal Home > Advanced Search > Browse Title Index ... Vol 13, No 3 (2007):, an edu-ethical perspecitve on the nature of truth: case studies in elite ... 2009: September: Supplement, An empirical study of university ...

  19. Browse Title Index

    African Journals Online (AJOL)

    Issue, Title. Vol 20, No 1 (2015), Assessment of iron status among preschool children (6 to 59 months) with and without malaria in Western Province, Kenya, Abstract. I Kisiangani, C Mbakaya, A Makokha, D Magu. Vol 20, No 1 (2015), Assessment of iron status among preschool children (6 to 59 months) with and without ...

  20. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 232 ... Issue, Title. Vol 5 (2003), Pre-School Education for a Democratic Society: Identifying Views of Stakeholders in Tanzania, Abstract. Willy LM Komba, Satoki T Mahenge, Gadi Koda. Vol 13, No 2 (2012), Process of Assuring Quality in Counselling at the National Open University of Nigeria: A Critique ...

  1. Browse Title Index

    African Journals Online (AJOL)

    Items 101 - 150 of 1732 ... Journal Home > Advanced Search > Browse Title Index ... Vol 10, No 3 (2007), An Audit Of Perioperative Cardiac Arrest At ... Vol 11, No 4 (2008), An Audit Of Rejected Repeated X-ray Films As A Quality Assurance ...

  2. Browse Title Index

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    Items 151 - 200 of 1038 ... Issue, Title. Vol 31, No 2 (2009), Assessing the utility of a continuous, underway fish egg sampler (CUFES) for sampling zooplankton, Abstract. S Sono, CL Moloney, CD van der Lingen. Vol 38, No 4 (2016), Assessing trophic adaptability is critical for understanding the response of predatory fishes to ...

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    Items 1 - 50 of 101 ... Issue, Title. Vol 3, No 4 (2014), Chlamydia trachomatis IgG antibodies seroprevalence among students in two tertiary institutions in Anambra state, Nigeria: a comparative study, Abstract PDF. CB Duru, FE Emele, ED Adinma, CO Ifeadike, KA Uwakwe, AO Oluboyo, BO Oluboyo, C Abejegah. Vol 2, No 1 ...

  4. Browse Title Index

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    Items 201 - 250 of 367 ... Issue, Title. Vol 42 (2013), Nursing the Cure: A Phonetic Analysis of /ʊə/ in South African English, Abstract PDF. I Bekker. Vol 1 (1980), Nuwe ontwikkelings binne chomsky se teorle van kerngrammatika, Abstract PDF. J Maartens. Vol 42 (2013), Obligatory Reflexivity in a Minimalist Grammar of ...

  5. Browse Title Index

    African Journals Online (AJOL)

    Items 651 - 700 of 1007 ... Issue, Title. Vol 4, No 1 (1990), Kinetics of oxidation of β-diimihe macrocyclic complexes and accessibility of six-coordinate copper(III) complexes generated by electrochemical oxidation of copper(II) complexes, Abstract PDF. Mohamed A. Khalifa. Vol 14, No 2 (2000), Kinetics of periodate oxidation of ...

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    Items 151 - 200 of 1020 ... Issue, Title ... Vol 48, No 2 (2006), Barriers to HIV Care and Treatment by Doctors: A review of the literature. ... Vol 48, No 5 (2006), Breast cancer – early detection and screening in South African women from the ...

  7. Browse Title Index

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    Issue, Title. Vol 23, No 2 (2011), Dynamique foliaire et croissance du maïs: Application du modèle «STICS» en conditions tropicales en RD-Congo, Abstract PDF. MM Lufuluabo, RV Kizungu, KK Nkongolo. Vol 18, No 1 (2006), Dynamique spatio-temporelle des populations d\\'Altises Podagrica spp. (Coleoptera ...

  8. Browse Title Index

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    Items 251 - 300 of 2005 ... Issue, Title. Vol 92, No 4 (2015), Blood Pressure and Obesity Index Assessment in a Typical Urban Slum in Enugu, Nigeria, Abstract. GI Ahaneku, CU Osuji, OC Oguejiofor, BC Anisiuba, VO Ikeh, JE Ahaneku. Vol 80, No 10 (2003):, Blood pressure control in a population where antihypertensives are ...

  9. Browse Title Index

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    Items 201 - 250 of 661 ... Journal Home > Advanced Search > Browse Title Index. Log in or Register to get access to full text downloads. .... A El-Mahdy, B Bolduc, J Upadhyay, R Shoukr, A Khoury. Vol 19, No 1 (2013), Factors affecting lower calyceal stone clearance after Extracorporeal shock wave lithotripsy, Abstract PDF.

  10. Browse Title Index

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    Items 101 - 150 of 985 ... Journal Home > Advanced Search > Browse Title Index ... Vol 17 (2010), Alternating Direction Implicit Finite Difference Time Domain Acoustic Wave Algorithm, Abstract. E Ikata .... Vol 17 (2010), Analytic derivation of the wave profile and phase speed of sixth order Stokes waves in deep water, Abstract.

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    Items 151 - 200 of 286 ... Issue, Title. Vol 2, No 3-4 (2008), Impact of fire wood collection on trees species diversity in Bauchi state, Nigeria, Abstract. A Nura, A Ibrahim, I Mohammed, U Haruna. Vol 5, No 3 (2011), Impact of national special program for food security in Abia State, nigeria, Abstract. CO Emerole. Vol 5, No 1 (2011) ...

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    Items 351 - 400 of 979 ... Issue, Title. Vol 45, No 9 (2003), Erectile dysfunction: A GP's guide to clinical assessment, Abstract PDF. PJ Harden. Vol 47, No 4 (2005), Ethical Issues in Family Practice: My Culture – Right or Wrong? Abstract PDF. GA Ogunbanjo, D Knapp van Bogaert. Vol 59, No 3 (2017), Ethical issues with ...

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    Items 301 - 350 of 745 ... Issue, Title. Vol 9, No 3 (1999), Frequency And Outcome In AIDS Patients In A University Teaching Hospital – A Five Year Review, Abstract. SA Ogun, OO Adelowo, AEA ... Vol 18, No 2 (2008), Good cllinical practice in clinical drug trials - What you need to know, Abstract. K Soyebi, Y Abosede, HAB ...

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    Items 1 - 50 of 217 ... Browse Title Index. Journal Home > Advanced ... Vol 13, No 1 (2016), Access to specialized surgical care, Abstract PDF. H Saidi ... Vol 9, No 2 (2012), Clinical Assessment of the Palmaris Longus – Accuracy of common tests, Abstract PDF ... Vol 11, No 2 (2014), Clinical trials in Surgery, Abstract PDF.

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    Items 151 - 200 of 633 ... Issue, Title. Vol 19, No 1 (2009), Delays in Tuberculosis Treatment and Associated Factors in Jimma Zone, Southwest Ethiopia, Abstract PDF. Ayalew Tegegn, Meseret Yazachew. Vol 26, No 1 (2016), Delivery Site Preferences and Associated Factors among Married Women of Child Bearing Age in ...

  16. Browse Title Index

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    Items 151 - 200 of 4119 ... Issue, Title. Vol 86, No 2 (1996), A re-evaluation of isotope screening for skeletal metastases in nodenegative breast cancer, Abstract PDF. C.A. Gudgeon, I.D. Werner, D.M. Dent. Vol 104, No 6 (2014), A reflection on the South African Medical Association – past, present and future, Abstract PDF.

  17. Browse Title Index

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    Items 201 - 250 of 1006 ... Issue, Title. Vol 49, No 8 (2007), Clinical approach to a patient with abnormal uterine bleeding, Abstract PDF. B G Lindeque. Vol 57, No 5 (2015), Clinical evidence in the management of swimmer's ear, Abstract PDF. Andre Marais. Vol 50, No 1 (2008), Clinical features of Systemic Lupus ...

  18. Browse Title Index

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    Items 701 - 750 of 1010 ... Issue, Title. Vol 6, No 2 (1998), Performance et stabilité de rendement des génotypes de patate douce dans divers environnements à l'est du Congo, Abstract. P Phemba, T Mutombo, N B Lutaladio, E E Carey. Vol 22 (2014): Supplement, Performance of Artemia shell-free embryos, Moina micrura and ...

  19. Browse Title Index

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    Issue, Title. Vol 17 (2005), A. C. conduction behaviour in amorphous WO3/CEO2 thin film, Abstract. B Yagoubi, C A Hogarth, A Boukorrt. Vol 16 (2003), A lossless image compression algorithm using variable block size segmentation, Abstract. Z Brahimi, K A Saadi, N Baraka. Vol 15 (2003), Analysis method of wavelet ...

  20. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 97 of 97 ... Journal Home > Advanced Search > Browse Title Index ... Vol 20, No 2 (2008), Research Note: Anthropometric data of the foot of ... Vol 26, No 1 (2014), Validation of the Automation Attitude Questionnaire for Airline Pilots ...

  1. Titles of Midas

    Directory of Open Access Journals (Sweden)

    G. L. Huxley

    2001-09-01

    Full Text Available The Phrygian inscription on the tomb at Yazılıkaya (8th century gives Midas the titles wanax and lawagtas, paralled in Mycenaean, and there were strong connections between his dynasty and Greek Aeolis.

  2. Browse Title Index

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    Items 201 - 250 of 333 ... Issue, Title. Vol 15, No 1 (2016), Irrigation potential of Inuakpa in Odukpani local government of Cross river using Kostiakov model, Abstract PDF. B.O. Unuigbe, K.I. Ofem, N.R.B. Antigha. Vol 2, No 2 (2003), LABOUR USE IN SMALL-SCALE YAM PRODUCTION IN QUA'AN PAN LOCAL GOVERNMENT ...

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    Items 51 - 100 of 644 ... Issue, Title. Vol 19, No 2 (2007), A qualitative study of medical student socialization in Malawi\\'s College of Medicine: Clincal crisis and beyond, Abstract PDF. C Wendland, C Bandawe. Vol 19, No 2 (2007), A qualitative study of medical student socialization in Malawi\\'s College of Medicine: Preclinical ...

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    Issue, Title. Vol 13, No 2 (2013), Using Mindfulness as a Teaching Aid for Phenomenology, Abstract PDF. IR Owen. Vol 8, No 1 (2008), Were Nietzsche's Cardinal Ideas – Delusions? Abstract PDF. Eva M Cybulska. Vol 12, No 1 (2012), What did you learn in school today? Abstract PDF. Carina Henriksson. Vol 5, No 1 (2005) ...

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    Items 51 - 100 of 265 ... Issue, Title. Vol 35, No 2 (2008), Choice of place for childbirth: prevalence and correlates of utilization of health facilities in Chongwe district, Zambia, Abstract PDF. AN Hazemba, S Siziya. Vol 43, No 1 (2016), Clinical and Radiological Features of Multiple Myeloma Patients at the University Teaching ...

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    Issue, Title. Vol 88, No 8 (1998), New birth and death registration forms - a foundation for the future, a challenge for health workers? Abstract PDF. Debbie Bradshaw, Danuta Kielkowski, Freddy Sitas. Vol 83, No 3 (1993), New estimates of infant and child mortality for blacks in South Africa, 1968-1979, Abstract PDF.

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    Items 151 - 200 of 643 ... Issue, Title. Vol 18, No 2 (2015), Contraceptive Knowledge and Compliance with Guidelines for Providing Contraceptive Services by Patent Medicine Vendors In Ibadan North Local Government Area, Nigeria, Abstract PDF. OO Ajayi, AJ Ajuwon. Vol 16, No 2 (2013), Coping Strategy for Food Security ...

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    Items 851 - 900 of 1006 ... Issue, Title. Vol 54, No 2 (2012), The effect of the introduction of a standard monitoring protocol on the investigations performed on the metabolic control of type 2 diabetes at Addington Hospital Medical Outpatients Department, Durban, South Africa, Abstract PDF. JM Gill, A Ross, F Pirie, ...

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    Issue, Title. Vol 8, No 2 (2016): Supplement, Using operative models (ICF and CBR) within an interprofessional context to address community needs, Abstract PDF. A Rhoda, F Waggie, G.C. Filies, J.M. Frantz. Vol 2, No 1 (2010), Using portfolios to assess professional competence and development in medical laboratory ...

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    Items 51 - 100 of 412 ... Issue, Title. Vol 30, No 3 (2011) ... Transferring the principle of double effect from war to business, Abstract. G. J. Rossouw ... Vol 22, No 2 (2003), Can more business ethics teaching halt corruption in companies? Abstract.

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    Items 101 - 150 of 155 ... Issue, Title. Vol 12 (2012), Political Dissent and Autonomy in Wum Local Government, Southern (West) Cameroons, 1957 – 1968, Abstract. TP Mbeum. Vol 9 (2009), Post-Emancipation Slave Commerce: Increasing Child Slave Trafficking and Women's Agency in Late Nineteenth-century Ghana ...

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    Items 451 - 500 of 581 ... Issue, Title. Vol 30, No 1 (2016), Risky sexual behaviour and associated factors among students of Debre Tabor University, Northwest Ethiopia: a cross-sectional study, Abstract PDF. Awoke Derbie, Mekonnen Assefa, Daniel Mekonnen, Fantahun Biadglegne. Vol 28, No 1 (2014), Road traffic accident: ...

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    Items 451 - 500 of 1346 ... Issue, Title. Vol 32, No 1 (2015), Fire and the dynamics of two unpalatable grass species (Cymbopogon pospischilii and Elionurus muticus) in a semi-arid climate, Abstract. Hennie A Snyman. Vol 8, No 1 (1973), Fire as a method of controlling macchia (Fynos) vegetation on the Amathole Mountains of ...

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    Issue, Title. Vol 43, No 2 (2006), Review: "'n Wonderlike geweld. Jeugherinneringe", By Elsa Joubert (2005), Abstract PDF. Henriette Roos. Vol 53, No 1 (2016), Review: Breyten Breytenbach, A Monologue in Two Voices, Abstract PDF. Andy Carolin. Vol 53, No 1 (2016), Review: The Shadow of the Hummingbird, Abstract ...

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    Items 51 - 100 of 103 ... Issue, Title ... SE Edusah, E Osei-Tutu ... Vol 6, No 2 (2016), Interrelationships among unemployment, inflation and economic growth in Nigeria, Abstract .... Vol 4, No 3 (2014): Special Edition, Socio-cultural Issues for ...

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    Items 4351 - 4386 of 4386 ... Issue, Title. Vol 107, No 6 (2017), When students become patients: TB disease among medical undergraduates in Cape Town, South Africa, Abstract PDF. H van der Westhuizen, A Dramowski. Vol 106, No 4 (2016), Where do children die and what are the causes? Under-5 deaths in the Metro West ...

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    Issue, Title. Vol 10, No 2 (2014), Sorindeia warneckei Engl. (Anacardiaceae), une espèce multi-usagère de la dépression de la Lama au Togo, Abstract PDF. A Akodewou, S Akpavi, M Dourma, K Batawila, KB Amegnaglo, W Atakpama, K Akpagama. Vol 10, No 1 (2014), Sterculia setigera Del.: influence de quelques ...

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    Items 1 - 50 of 126 ... Issue, Title. Vol 8, No 2 (2016), 2010 FIFA World Cup stadium investment: Does the post-event usage justify the expenditure? Abstract PDF. Luke Humphrey, Gavin Fraser. Vol 6, No 1 (2014), 7Implication of mergers and acquisitions on stock returns before and during the 2007–2009 credit crunch: An ...

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    Items 1 - 48 of 48 ... Vol 2 (2003), Electrical Properties of Antimony (Sb) Metal Contacts to Silicon (Si) Thin Films, Abstract PDF. S. S. Oluyamo. Vol 4 (2005), Fading of radio signals from spaced synchronous satellites: dependence on source coordinates, Abstract PDF. Larry LN Amaeshi. Vol 3 (2004), Finite Element Modelling ...

  20. 20 CFR 416.573 - How much will we withhold from your title II and title VIII benefits to recover a title XVI...

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 2 2010-04-01 2010-04-01 false How much will we withhold from your title II... Payment of Benefits, Overpayments, and Underpayments § 416.573 How much will we withhold from your title...-due benefits. (b)(1) We will collect the overpayment from current monthly benefits due in a month by...

  1. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  2. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  3. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  4. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  5. Measurement of e+p neutral current deep inelastic scattering with a longitudinally polarised positron beam and X-ray radiation damage for silicon sensors

    International Nuclear Information System (INIS)

    Januschek, Friederike

    2011-01-01

    The cross sections for Neutral Current e + p Deep Inelastic Scattering (NC DIS) with longitudinally polarised positron beams were measured at a centre-of-mass energy √(s)=318 GeV using the ZEUS detector at HERA. Single-differential cross sections as a function of the virtuality of the exchanged boson, Q 2 , of the inelasticity, y, and of the Bjorken scaling variable, x, and reduced cross sections (as a function of x and Q 2 ) were measured in the phase space region defined as Q 2 >185 GeV 2 , y 2 >0.004. The results, based on data corresponding to an integrated luminosity of 135.5 pb -1 , are given for zero polarisation for the whole sample, as well as for both positive and negative values of the longitudinal polarisation of the positron beam. The measured cross sections are compared to the predictions of the Standard Model. The proton structure function xF 3 is measured and the interference term xF γZ 3 is extracted as a function of x at Q 2 =1500 GeV 2 by extrapolating the measurements done at different Q 2 values. The presented measurements of the polarised e + p NC DIS cross sections, the xF 3 structure function and the xF γZ 3 interference term exceed the precision of previous ZEUS measurements. The uncertainties of the Parton Density Functions (PDFs) for the gluon and the u-valence quark are expected to be reduced at high-x values when the presented results are included in the PDF fits of the proton. A study is presented to further reduce PDF uncertainties for the gluon at very high x (above 10 -1 ) through the inclusion of DIS dijet cross sections in a ZEUS-JETS-like PDF fit. An irradiation facility to study the X-ray-induced radiation damage of silicon sensors for the European XFEL was set up at HASYLAB. Nine gate-controlled diodes were irradiated with doses from 1 kGy to 1 GGy in several irradiation steps and the surface current I surf and the flatband voltage V fb were measured after each irradiation. It was found that both, I surf and V fb , strongly

  6. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2008-01-01

    This is the 34th revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13 538 journal titles, 2 106 regularly scanned journals and 613 key journals. It was last updated in February 2008. A journal - or periodical - is a continuing publication issued in a succession of discrete parts, usually bearing numbering and/or chronological designations and intended to be continued indefinitely. It is generally published within a defined, fixed interval between issues and normally appears more than once per year. It includes a mixture of articles, letters, summaries, etc. Within this definition, annuals such as the Annual Review of Nuclear Science are included, but series titles such as the McGraw-Hill Series in Nuclear Engineering are not. The purpose of this document is to provide descriptive cataloguers with standard elements to include in bibliographic level 'S' of the INIS record. These elements include field (tag) 229 (Full Journal Title), 320 (ISSN) and 321 (CODEN). The full journal title is mandatory, and either the ISSN or the CODEN must be included (both may appear). Instructions on how to use this and other elements of the INIS record format are found in INIS: Guide to Bibliographic Description (IAEA-INIS-1). In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: - In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. - In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. - In Part III, all journals that are regularly scanned by

  7. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2009-01-01

    This is the 35th revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13 750 journal titles, 1 965 regularly scanned journals and 593 key journals. It was last updated in March 2009. A journal - or periodical - is a continuing publication issued in a succession of discrete parts, usually bearing numbering and/or chronological designations and intended to be continued indefinitely. It is generally published within a defined, fixed interval between issues and normally appears more than once per year. It includes a mixture of articles, letters, summaries, etc. Within this definition, annuals such as the Annual Review of Nuclear Science are included, but series titles such as the McGraw-Hill Series in Nuclear Engineering are not. The purpose of this document is to provide descriptive cataloguers with standard elements to include in bibliographic level 'S' of the INIS record. These elements include field (tag) 229 (Full Journal Title), 320 (ISSN) and 321 (CODEN). The full journal title is mandatory, and either the ISSN or the CODEN must be included (both may appear). Instructions on how to use this and other elements of the INIS record format are found in INIS: Guide to Bibliographic Description (IAEA-INIS-1). In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: - In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. - In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. - In Part III, all journals that are regularly scanned by the

  8. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2007-01-01

    This is the 33rd revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). This list is published annually and includes the titles of all journals which have contained articles submitted to INIS at the time of publication. The current list contains 13 396 journal titles, 2 170 regularly scanned journals and 578 key journals. It was last updated in February 2007. A journal - or periodical - is a continuing publication issued in a succession of discrete parts, usually bearing numbering and/or chronological designations and intended to be continued indefinitely. It is generally published within a defined, fixed interval between issues and normally appears more than once per year. It includes a mixture of articles, letters, summaries, etc. Within this definition, annuals such as the Annual Review of Nuclear Science are included, but series titles such as the McGraw-Hill Series in Nuclear Engineering are not. The purpose of this document is to provide descriptive cataloguers with standard elements to include in bibliographic level 'S' of the INIS record. These elements include field (tag) 229 (Full Journal Title), 320 (ISSN) and 321 (CODEN). The full journal title is mandatory, and either the ISSN or the CODEN must be included (both may appear). Instructions on how to use this and other elements of the INIS record format are found in INIS: Guide to Bibliographic Description (IAEA-INIS-1). In order to help the user find titles easily, the list is arranged in six parts, followed by summary statistics: - In Part I, all key journals are grouped under the name of the country or international organization responsible for their input in INIS, then sorted alphabetically under their title. - In Part II, all key journals are sorted alphabetically under their title. The name of the country or international organization responsible for their input in INIS is entered in parentheses within the body of the entry. - In Part III, all journals that are regularly scanned by

  9. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  10. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  11. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  12. Measurement of e{sup +}p neutral current deep inelastic scattering with a longitudinally polarised positron beam and X-ray radiation damage for silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Januschek, Friederike

    2012-05-15

    The cross sections for Neutral Current e{sup +}p Deep Inelastic Scattering (NC DIS) with longitudinally polarised positron beams were measured at a centre-of-mass energy {radical}(s)=318 GeV using the ZEUS detector at HERA. Single-differential cross sections as a function of the virtuality of the exchanged boson, Q{sup 2}, of the inelasticity, y, and of the Bjorken scaling variable, x, and reduced cross sections (as a function of x and Q{sup 2}) were measured in the phase space region defined as Q{sup 2}>185 GeV{sup 2}, y<0.9 and y(1-x){sup 2}>0.004. The results, based on data corresponding to an integrated luminosity of 135.5 pb{sup -1}, are given for zero polarisation for the whole sample, as well as for both positive and negative values of the longitudinal polarisation of the positron beam. The measured cross sections are compared to the predictions of the Standard Model. The proton structure function xF{sub 3} is measured and the interference term xF{sup {gamma}}{sup Z}{sub 3} is extracted as a function of x at Q{sup 2}=1500 GeV{sup 2} by extrapolating the measurements done at different Q{sup 2} values. The presented measurements of the polarised e{sup +}p NC DIS cross sections, the xF{sub 3} structure function and the xF{sup {gamma}}{sup Z}{sub 3} interference term exceed the precision of previous ZEUS measurements. The uncertainties of the Parton Density Functions (PDFs) for the gluon and the u-valence quark are expected to be reduced at high-x values when the presented results are included in the PDF fits of the proton. A study is presented to further reduce PDF uncertainties for the gluon at very high x (above 10{sup -1}) through the inclusion of DIS dijet cross sections in a ZEUS-JETS-like PDF fit. An irradiation facility to study the X-ray-induced radiation damage of silicon sensors for the European XFEL was set up at HASYLAB. Nine gate-controlled diodes were irradiated with doses from 1 kGy to 1 GGy in several irradiation steps and the surface current I

  13. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  14. The ties that bind: what's in a title?

    Science.gov (United States)

    Neuhaus, Susan J

    2018-03-01

    Many Australian and New Zealand surgeons use the title 'Mister' rather than 'Doctor', a practice dating back to traditions established over 600 years ago. The Royal Australasian College of Surgeons is currently undergoing a period of critical self-reflection, embodied by its 'Respect' campaign. Active measures to embrace diversity and encourage women into surgery are underway. This paper reviews the historical basis to the use of gendered titles and their current use amongst fellows. De-identified demographic data from the college register of active fellows was searched by self-identified title, country or state, and gender. Data were further reviewed by surgical sub-specialty and year of fellowship. The college dataset suggests that there is significant variance in the preference for gendered titles, determined predominantly by geography rather than specialty. The highest use of gendered titles (by male and female surgeons) was in Victoria/Tasmania (58% male, 22% female) and New Zealand (81% male, 17% female). By contrast, only 2% of female surgeons in other states elected a gendered title (Miss/Mrs/Ms). Surgery is the only profession that continues to use gendered titles. As the College of Surgeons moves towards greater equity and diversity, consideration should be given to phasing out the use of gendered titles, which serve to divide rather than unite our profession. © 2017 Royal Australasian College of Surgeons.

  15. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  16. Comparing Unique Title Coverage of Web of Science and Scopus in Earth and Atmospheric Sciences

    Science.gov (United States)

    Barnett, Philip; Lascar, Claudia

    2012-01-01

    The current journal titles in earth and atmospheric sciences, that are unique to each of two databases, Web of Science and Scopus, were identified using different methods. Comparing by subject category shows that Scopus has hundreds of unique titles, and Web of Science just 16. The titles unique to each database have low SCImago Journal Rank…

  17. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  18. Macular edema in siliconized eyes

    Directory of Open Access Journals (Sweden)

    Kaya A

    2016-05-01

    Full Text Available Abdullah Kaya,1 Yakup Aksoy,2 Yıldıray Yildirim,3 Murat Sonmez3 1Department of Ophthalmology, Anittepe Military Dispensary, Ankara, Turkey; 2Department of Ophthalmology, Girne Military Hospital, Girne, Cyprus; 3Department of Ophthalmology, GATA Haydarpasa Training Hospital, Istanbul, TurkeyWe read with great interest the article titled “Value of optical coherence tomography in the detection of macular pathology before the removal of silicone oil” by Rashad et al.1 The authors have evaluated the optical coherence tomography (OCT findings before the removal of silicone oil (SiO. We congratulate the authors for this well-organized study and would like to contribute to their findings.View original paper by Rashad and colleagues.

  19. 32 CFR 644.62 - Title evidence.

    Science.gov (United States)

    2010-07-01

    ... HANDBOOK Acquisition Procurement of Title Evidence, Title Clearance, and Closings § 644.62 Title evidence... and their charter to issue the same. They must also be financially sound and be willing and able to...

  20. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 246 ... ... for combating current and future diseases of global health importance, Abstract ... and evaluation of a tripartite novel excipient for direct compression of ... Vol 1, No 1 (2004), Diffuse Transcranial Electrical Stimulation ...

  1. Browse Title Index

    African Journals Online (AJOL)

    2001), Current status of the controlled atmosphere storage in Nigeria ... in Healthy subjects eating potato crisps fried in palmolein of canola oil, Abstract PDF ... of "Kindimu", a Fermented Milk-Based-Sorghum-Flour, Abstract PDF.

  2. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 204 ... Vol 14, No 1 (2015), A review of maize, rice, tomato and banana research in ... drought analysis for sustainable smallholder maize production in semi-arid ... analysis of current knowledge and research gaps, Abstract PDF.

  3. Free to read Titles

    African Journals Online (AJOL)

    African Journal of Educational Studies in Mathematics and Sciences View Journal | Current ... is Open Access. AFRREV IJAH: An International Journal of Arts and Humanities .... is Open Access. Journal of Business and Administrative Studies

  4. Browse Title Index

    African Journals Online (AJOL)

    sponsorship-related factors with current cigarette smoking among in-school adolescents in Zambia, Abstract PDF. R Zulu, S Siziya, AS Muula, E Rudatsikira. Vol 1, No 1 (2002), ATRIAL SEPTAL ANEURYSM IN AN 80-YEAR-OLD ...

  5. Browse Title Index

    African Journals Online (AJOL)

    Items 201 - 250 of 823 ... Vol 1, No 1 (2008), Current trend in antimicrobial susceptibility pattern of Clostridium tetani isolated from ... I. Rasheed Habiba, A. Yakasai Ahmad, Sadiq Abubakar ... LG Hassan, SW Hassan, T Hashim, KJ Umar, NA Sani.

  6. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 214 ... Vol 24, No 2 (2009), Determinants of urban public transport service pricing in Kumasi, ... use of contraception among currently married women in Nigeria? ... Enterprise Diversification and the Motivation Factor: The Case of ...

  7. Browse Title Index

    African Journals Online (AJOL)

    Items 401 - 450 of 641 ... ... (2015), Observations on the Current Bacteriological Profile of Chronic ... Vol 4, No 1 (2014): Supplement 1, Osteogenesis Imperfecta: A Case Report .... Periodontal Disease Awareness and Knowledge among Nigerian ...

  8. SSA Unified Measurement System (SUMS) Title XVI Post-Eligibility Operational Data Store (PEODS)

    Data.gov (United States)

    Social Security Administration — Current store for information on post entitlement claims for title 16 for redeterminations and limited issues. Also includes information from Starz and Stripes field...

  9. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  10. Region 7 Title V facilities

    Data.gov (United States)

    U.S. Environmental Protection Agency — This web map shows the Region 7 Title V facilities (Clean Air Act major sources), any Class I areas within 300 km of R7 States, and any Tribal areas within 50 miles...

  11. Title V Permitting Statistics Inventory

    Data.gov (United States)

    U.S. Environmental Protection Agency — The Title V Permitting Statistics Inventory contains measured and estimated nationwide statistical data, consisting of counts of permitted sources, types of permits...

  12. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  13. Browse Title Index

    African Journals Online (AJOL)

    Items 651 - 700 of 763 ... Vol 4, No 1 (2010), Spatial and temporal distribution of North Atlantic tropical .... Vol 5, No 2 (2011), Sustainable development in Cameroon's forestry sector: Progress, ... The current pollution status of the new Calabar river in the Niger ... Vol 11, No 1 (2017), The earthquake/seismic risk, vulnerability ...

  14. Browse Title Index

    African Journals Online (AJOL)

    L de Beer, J Pienaar, S Rothmann Jr ... Vol 104, No 11 (2014), Liver tumours in children: Current surgical management and role of transplantation, Abstract PDF ... Vol 78, No 10 (1990), Long-term efficacy and safety of sustained-release ...

  15. Browse Title Index

    African Journals Online (AJOL)

    Items 451 - 500 of 808 ... ... ABOUT THIS JOURNAL · Advanced Search · Current Issue · Archives ... Abstract PDF .... Vol 13, No 2 (2013), Macronutrient status of the elderly (60-80 ... Mapping aflatoxin risk from milk consumption using biophysical ...

  16. Browse Title Index

    African Journals Online (AJOL)

    Items 401 - 450 of 917 ... Journal Home · ABOUT THIS JOURNAL · Advanced Search · Current Issue · Archives ... Vol 17, No 4 (2017), Factors associated with anaemia status and ... breastfeeding practices in Edo state, Nigeria, Abstract PDF ... Vol 8, No 3 (2008), Factors likely to enhance mycotoxin introduction into the human ...

  17. Browse Title Index

    African Journals Online (AJOL)

    Items 251 - 300 of 932 ... Journal Home · ABOUT THIS JOURNAL · Advanced Search · Current Issue ... Vol 19, No 2 (2015), Editorial/Editoriaux, Abstract PDF ... Vol 19, No 3 (2015), Editorial: High Prevalence of Male infertility in Africa: Are Mycotoxins to Blame? .... of a women organisation in Ozubulu, Anambra State of Nigeria ...

  18. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 220 ... Vol 8, No 1 (2015), Progressive dysarthria and ataxia, Abstract PDF ... Vol 5, No 2 (2012), Rehabilitation of patients with traumatic brain injuries in South ... Vol 6, No 4 (2013), Stroke in SSA: Review of current literature ...

  19. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 623 ... ... and Causes of Death in Spinal Cord Injury Patients in Nigeria, Abstract PDF ... Vol 24, No 3 (2005), Correlates of self-reported physical health status of ... Vol 28, No 3 (2009), Current Concepts in the Diagnosis of Primary ... mellitus in Nigerian pregnant women - comparison between 75G and 100G ...

  20. Browse Title Index

    African Journals Online (AJOL)

    Items 1 - 50 of 104 ... Vol 3, No 1 (2005), A surgical cure for sarcoidosis. ... procedures - prophylaxis against infective endocarditis: guidelines, Abstract ... Vol 2, No 2 (2004), Current management of chronic hepatitis B: ... Vol 1, No 2 (2003), Gastric outlet obstruction caused by drug-induced focal pancreatitis: case report, Details.

  1. Browse Title Index

    African Journals Online (AJOL)

    Items 351 - 400 of 623 ... Vol 28, No 1 (2009), Marfan Syndrome: A Study of a Nigerian Family and Review of Current Cardiovascular Management, Abstract PDF. E.N Ekure, A.O Onakoya, D.A Oke. Vol 22, No 1 (2003), Marfan's syndrome presenting with abdominal aortic aneurysm: A case for vigilance, Abstract PDF. BT Ugwu ...

  2. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 463 ... Vol 2, No 6 (2010), Artificial neural network based modeling and controlling ... route and rheological behaviour of α-Fe2O3, Abstract PDF ... with mass diffusion and constant wall temperature with hall current, Abstract PDF.

  3. Browse Title Index

    African Journals Online (AJOL)

    Items 151 - 200 of 524 ... Vol 18, No 4 (2016), Development of human PBBK models for mixtures: Binary ... study of an iron and steel smelting industry, Lagos, Nigeria, Abstract PDF ... Vol 16, No 3 (2014), Effect of selected factors on the current flow and voltage ... Vol 14, No 2 (2012), Effects of nutrient and light stress on some ...

  4. Browse Title Index

    African Journals Online (AJOL)

    Items 51 - 100 of 270 ... Vol 15, No 1 (2016), Current status of sea turtle protection in Lamu Seascape, Kenya: Trends in nesting, nest predation and stranding levels, Abstract PDF ... Vol 6, No 2 (2008), Description of the IMR Standard Light Trap and the Vertical Distribution of Some Decapod Larvae (Homarus and Nephrops) ...

  5. Browse Title Index

    African Journals Online (AJOL)

    Items 301 - 350 of 497 ... Vol 54, No 1 (2008), Obesity in Nigeria: Current trends and management, Abstract ... Vol 50, No 2 (2007), Occupational hazards and safety measures .... of Health Workers working in Maternal and Child Health Units on ...

  6. Browse Title Index

    African Journals Online (AJOL)

    Items 701 - 750 of 846 ... Journal Home · ABOUT THIS JOURNAL · Advanced Search · Current Issue · Archives ... Vol 10, No 1 (2018), Synthesis and characterization of perovskite oxides lafe1-xcuxo3 (0 ≤ x ≤ 0.4) obtained by sol-gel method, Abstract PDF ... Vol 9, No 2 (2017), Synthesis of MCM-41 nanomaterial from ...

  7. National Ignition Facility Title II Design Plan

    International Nuclear Information System (INIS)

    Kumpan, S

    1997-01-01

    This National Ignition Facility (NIF) Title II Design Plan defines the work to be performed by the NIF Project Team between November 1996, when the U.S. Department of Energy (DOE) reviewed Title I design and authorized the initiation of Title H design and specific long-lead procurements, and September 1998, when Title 11 design will be completed

  8. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  9. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  10. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  11. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  12. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

  13. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  14. Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

    CERN Document Server

    Stucci, Stefania Antonia; Lynn, Dave; Kierstead, James; Kuczewski, Philip; van Nieuwenhuizen, Gerrit J; Rosin, Guy; Tricoli, Alessandro

    2017-01-01

    The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D; program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0...

  15. INIS: Authority List for Journal Titles

    International Nuclear Information System (INIS)

    1992-01-01

    This is the nineteenth revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). It lists 10,797 journal titles which have contained articles within the scope of INIS. The purpose of this Authority List is to provide descriptive cataloguers with a standard abbreviation for journal titles and to assist users of INIS products with a tool for verifying the full title of a journal. A journal, or periodical, is generally published within a defined, fixed interval between issues, which usually has more than one issue a year, and which usually includes a mixture of articles, letters, summaries, etc. Within this definition, annuals such as Annual Review of Nuclear Science are included. Series titles as, for example the McGraw-Hill Series in Nuclear Engineering, are not included in this Authority. Entries: Each entry consists of: - the full journal title (highlighted); - the abbreviated title; - ISSN, if available; - CODEN, if available; - additional information related to the journal title. Arrangement: In Part I, the full journal titles are grouped by country or international organization name and ordered alphabetically, followed by the ISSN, the CODEN in square brackets if available, and then the abbreviated title. The abbreviated title is based on the rules of ISO 4: Documentation - International Code for the Abbreviation of Titles of Periodicals. The abbreviations of the words are taken from the ISDS List of Periodical Title Word Abbreviation. In Part II, the order of the citations is reversed: the abbreviated journal titles are arranged alphabetically, followed by country code. Then the full journal titles are followed by the country of publication, and if available, ISSN and CODEN. Additional Information: There is important information related to the journal titles which are fundamental for tracing the history of the title and the present status. They are listed below and are entered whenever applicable: - Ceased publication; - Superseded by

  16. Biblioteca escolar, lectura y literatura infantil y juvenil: selección de títulos actuales en español y portugués (2005-2015 / School library, reading and Children's and Young’s Literature: selection of current titles in Spanish and Portuguese (2005-2015

    Directory of Open Access Journals (Sweden)

    Moisés Selfa Sastre

    2017-01-01

    Full Text Available Resumen La función del bibliotecario en la Biblioteca Escolar resulta de todo imprescindible para que este realice una buena selección de obras y títulos que sean los adecuados para despertar el interés lector en los jóvenes estudiantes. Partiendo del concepto de canon literario entendido este como una selección subjetiva de textos literarios, en este artículo proponemos un conjunto de obras de literatura infantil y juvenil escritas en español y portugués, publicadas entre 2005 y 2015, que puede formar parte de la Biblioteca Escolar por dos motivos fundamentales: por un lado, se trata de publicaciones actuales; por otro, con cada una de ellas se puede despertar el gusto por la lectura de unos textos escritos explícitamente para el público infantil y juvenil. Las obras seleccionadas las agrupamos, como sostiene la bibliografía actual sobre esta cuestión, en tres géneros: cuento y álbum ilustrado, poesía y teatro. Abstract The role of the librarian in the School Library is essential for this makes a good selection of titles that are adequate to arouse reader interest in young students. Based on the concept of literary canon understood as a subjective selection of literary texts, in this paper we propose a set of works of children's literature written in Spanish and Portuguese, published between 2005 and 2015, which may be part of the School Library by two fundamental reasons: firstly, it is current publications; on the other, each one can awaken the love of reading of texts written specifically for young audiences. The selected titles are grouped, as claimed by the current literature on this issue, in three genres: story and picture books, poetry and theater.

  17. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  18. TITLE

    Directory of Open Access Journals (Sweden)

    Nisha K. M

    2016-01-01

    Full Text Available The new millennium is seen as an epoch of entrepreneurship with entrepreneurs perceiving novel opportunities, organizing resources, undertaking risks to pursue their goals in establishing innovative ventures for scaling new horizons. Women entrepreneurs have the potency to confront numerous challenges, such as creating equity, equilibrium, ensuring sustainable and inclusive socio economic development in divergent economies, by seizing tremendous business opportunities in the contemporary commercial world. Kerala, the southern State of India, is experiencing an economic renovation through technological transformation and, in particular, through the growth of women oriented Micro, Small and Medium Enterprises (MSMEs. The study aims to; identify the growth trends of women’s entrepreneurship in the micro enterprises of Kerala; examine whether women’s entrepreneurial activities significantly vary across the form of women owned enterprises, type of organization and nature of activity; and also explore the prospects and challenges faced by women entrepreneurs through micro entrepreneurial activities. Research methodology involves the application of descriptive quantitative analysis on the secondary data primarily collected from the database of Directorate of Industries and District Industries Centre for a period of 7 years extending from 2007-08 to 2013-14. Findings reveal that MSMEs spawn better income distribution, by operating in heterogeneous areas of the economy with limited capital and creating more employment opportunities, thereby reducing poverty and inequalities. The trend analysis reflects an escalation in the number of enterprises, investments, profits and employment opportunities generated especially through micro enterprises of women. They play a crucial role in the economy in terms of creating self employment and generating employment opportunities for others. A paradigm shift is seen in the role of women’s entrepreneurship in terms of innovation, attitudes, leadership qualities, competitiveness, entrepreneurial skill and absorbing new entrants to the job market, empowering marginalized women.

  19. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  20. From silicon to organic nanoparticle memory devices.

    Science.gov (United States)

    Tsoukalas, D

    2009-10-28

    After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

  1. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Porosity-dependent fractal nature of the porous silicon surface

    Energy Technology Data Exchange (ETDEWEB)

    Rahmani, N.; Dariani, R. S., E-mail: dariani@alzahra.ac.ir [Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of)

    2015-07-15

    Porous silicon films with porosity ranging from 42% to 77% were fabricated by electrochemical anodization under different current density. We used atomic force microscopy and dynamic scaling theory for deriving the surface roughness profile and processing the topography of the porous silicon layers, respectively. We first compared the topography of bare silicon surface with porous silicon and then studied the effect of the porosity of porous silicon films on their scaling behavior by using their self-affinity nature. Our work demonstrated that silicon compared to the porous silicon films has the highest Hurst parameter, indicating that the formation of porous layer due to the anodization etching of silicon surface leads to an increase of its roughness. Fractal analysis revealed that the evolution of the nanocrystallites’ fractal dimension along with porosity. Also, we found that both interface width and Hurst parameter are affected by the increase of porosity.

  3. 24 CFR 202.12 - Title II.

    Science.gov (United States)

    2010-04-01

    ... INSTITUTIONS AND MORTGAGEES Title I and Title II Specific Requirements § 202.12 Title II. (a) Tiered pricing—(1... rate up to two percentage points under the mortgagee's customary lending practices must be based on... after accounting for the value of servicing rights generated by making the loan and other income to the...

  4. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  5. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  6. Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

    International Nuclear Information System (INIS)

    Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

    2002-01-01

    Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

  7. 42 CFR 476.86 - Correlation of Title XI functions with Title XVIII functions.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 4 2010-10-01 2010-10-01 false Correlation of Title XI functions with Title XVIII functions. 476.86 Section 476.86 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF...) Qio Review Functions § 476.86 Correlation of Title XI functions with Title XVIII functions. (a...

  8. Electrochemical properties of ion implanted silicon

    International Nuclear Information System (INIS)

    Pham minh Tan.

    1979-11-01

    The electrochemical behaviour of ion implanted silicon in contact with hydrofluoric acid solution was investigated. It was shown that the implanted layer on silicon changes profoundly its electrochemical properties (photopotential, interface impedance, rest potential, corrosion, current-potential behaviour, anodic dissolution of silicon, redox reaction). These changes depend strongly on the implantation parameters such as ion dose, ion energy, thermal treatment and ion mass and are weakly dependent on the chemical nature of the implantation ion. The experimental results were evaluated and interpreted in terms of the semiconductor electrochemical concepts taking into account the interaction of energetic ions with the solid surface. The observed effects are thus attributed to the implantation induced damage of silicon lattice and can be used for profiling of the implanted layer and the electrochemical treatment of the silicon surface. (author)

  9. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  10. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  11. INIS: Authority list for journal titles

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2003-03-01

    This is the twenty-ninth revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). It lists the titles of 12 990 journals which have contained articles within the scope of INIS. The purpose of this report is to provide descriptive cataloguers with a standard entry for the full title of a journal. In addition to the full journal title, the ISSN (International Standard Serial Number), administered by the ISSN International Centre, Paris, France, and/or CODEN, assigned by Chemical Abstracts Service, USA, are given in this manual. In order to help the reader to find titles easily, the list is divided into two parts. In Part I, the full journal titles are grouped by country or international organization responsible for coverage and ordered alphabetically. In Part II, the full journal titles of all countries or international organizations are arranged alphabetically. The country name or the international organization name responsible for coverage of the journal title to INIS is entered in parentheses. Journal titles marked with an asterisk are regularly scanned by INIS. Titles that have been identified by INIS Centres as 'Key Journals' are marked with the hash sign.

  12. INIS: Authority list for journal titles

    International Nuclear Information System (INIS)

    2003-01-01

    This is the twenty-ninth revision of the INIS: Authority List for Journal Titles (IAEA-INIS-11). It lists the titles of 12 990 journals which have contained articles within the scope of INIS. The purpose of this report is to provide descriptive cataloguers with a standard entry for the full title of a journal. In addition to the full journal title, the ISSN (International Standard Serial Number), administered by the ISSN International Centre, Paris, France, and/or CODEN, assigned by Chemical Abstracts Service, USA, are given in this manual. In order to help the reader to find titles easily, the list is divided into two parts. In Part I, the full journal titles are grouped by country or international organization responsible for coverage and ordered alphabetically. In Part II, the full journal titles of all countries or international organizations are arranged alphabetically. The country name or the international organization name responsible for coverage of the journal title to INIS is entered in parentheses. Journal titles marked with an asterisk are regularly scanned by INIS. Titles that have been identified by INIS Centres as 'Key Journals' are marked with the hash sign

  13. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  14. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  15. Field assisted photoemission by silicon photocathodes

    International Nuclear Information System (INIS)

    Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

    1991-01-01

    Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

  16. Transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  17. Land Titles and Rice Production in Vietnam

    DEFF Research Database (Denmark)

    Van Den Broeck, Katleen; Newman, Carol; Tarp, Finn

    In most of the empirical literature on land titling, the household is regarded as unitary, and land rights are found to have ambiguous effects on land allocation, investment and productivity. Using data from 12 provinces in Vietnam, we diversify land titles, and show in a household fixed effects...... analysis of plot level rice yields that land titles are indeed important. Only exclusively held titles have the expected positive effects, and the positive effect on yields is found in male headed households. Furthermore, a household level rice yield function reveals that exclusive user rights...... are inefficiency decreasing, while jointly held user rights have no efficiency effects. Finally, once the gender of the head of household is controlled for, exclusively held female titles have a greater positive effect on the efficiency of the household than that of male held titles...

  18. University Crystalline Silicon Photovoltaics Research and Development

    Energy Technology Data Exchange (ETDEWEB)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

    2008-08-18

    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  19. Photopolymerizable silicone monomers, oligomers, and resins

    International Nuclear Information System (INIS)

    Jacobine, A.F.; Nakos, S.T.

    1992-01-01

    The purpose of this chapter is to acquaint the general photopolymer researcher with the historical development of the chemistry and technology of photopolymerizable silicone monomers, fluids, and resins. The current status of research in these areas is assessed. The focus of this chapter is not only on the polymer chemistry and application of this technology, but also on important aspects of the synthetic chemistry involved in the preparation of UV-curable silicone monomers, oligomers, and resins. 236 refs., 6 tabs

  20. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  1. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  2. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  3. SVX/silicon detector studies

    International Nuclear Information System (INIS)

    Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

    1995-11-01

    AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

  4. 24 CFR 200.61 - Title.

    Science.gov (United States)

    2010-04-01

    ... Commissioner. (c) Endorsement of the credit instrument for insurance shall evidence the acceptability of title... GENERAL INTRODUCTION TO FHA PROGRAMS Requirements for Application, Commitment, and Endorsement Generally...

  5. Should title lengths really adhere to the American Psychological Association's twelve word limit?

    Science.gov (United States)

    Hallock, Robert M; Dillner, Kari M

    2016-04-01

    The publication manual for the American Psychological Association (APA) suggests that title lengths do not exceed 12 words, yet journals do not prevent longer titles. Here, we examined title lengths in APA journals to see how many exceeded the APA's suggested limit. First, we conducted a systematic analysis of 235 articles in the current issues of 23 APA journals. A total of 52% of titles were more than 12 words long. Second, we examined articles from APA journals that were at least 50 years old to examine whether title lengths have changed over time. Our results suggested that the average title lengths have indeed increased with time. One of 2 courses should be taken. Perhaps science is becoming more complex that longer titles are needed in order to convey the primary message to the reader. If this is the case, then the APA's word limit should be increased. On the other hand, however, maybe editor and reviewers should try to enforce the current word limit to force writers to be succinct. Either way, editors should make their preferences clear so that the trend for longer titles does not continue unchecked. (c) 2016 APA, all rights reserved).

  6. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  7. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  8. Comparing the characteristics of highly cited titles and highly alted titles

    Energy Technology Data Exchange (ETDEWEB)

    Didegah, F.; Bowman, T.D.; Bowman, S.; Hartley, J.

    2016-07-01

    This study examines differences in the types of titles for articles that show high altmetric activity (highly alted articles) versus highly cited articles. This work expands on previous research on document titles in combination with a grounded theory approach to develop a codebook in which articles were manually coded based on 11 characteristics. The results show that there are differences and similarities in titles across many of the examined characteristics; highly cited titles and highly mentioned titles on Wikipedia have some similar characteristics such as they have the the highest percentage of substantive words; in addition, there are no or very few titles referencing outside or with humor/lightness on both platforms. Twitter and Facebook also showed some similarities having the highest percentage of humorous/light titles and lowest percentage of substantive words in their titles. (Author)

  9. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  10. Investigation of the interface region between a porous silicon layer and a silicon substrate

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

    2005-01-01

    Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

  11. Getting to one from title 10 + title 32 unity of effort in the homeland

    OpenAIRE

    Prosch, Caroline Ross.

    2011-01-01

    CHDS State/Local Approved for public release; distribution is unlimited This thesis bridges the knowledge gap between Title 10 Active Duty and Title 32 National Guard in order to breakdown cultural barriers and reach unity of effort for response operations in the homeland. Regrettably, a unified response was missing among Title 10 Active Duty and Title 32 National Guard members following Hurricane Katrina. Since then, initiatives based in doctrine, statutes and formal recommendations...

  12. Porous siliconformation and etching process for use in silicon micromachining

    Science.gov (United States)

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  13. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  14. How property title impacts urban consolidation

    DEFF Research Database (Denmark)

    Easthope, Hazel; Warnken, Jan; Sherry, Cathy

    2014-01-01

    Continuing urbanisation is triggering an increase in multi-titled housing internationally. This trend has given rise to a substantial research interest in the social consequences of higher density living. Little enquiry, however, has been directed to examining how property title subdivisions gene...

  15. 31 CFR 505.01 - Short title.

    Science.gov (United States)

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Short title. 505.01 Section 505.01 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued) OFFICE OF FOREIGN... CERTAIN MERCHANDISE BETWEEN FOREIGN COUNTRIES § 505.01 Short title. The regulations in this part may be...

  16. 33 CFR 401.1 - Short title.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 3 2010-07-01 2010-07-01 false Short title. 401.1 Section 401.1 Navigation and Navigable Waters SAINT LAWRENCE SEAWAY DEVELOPMENT CORPORATION, DEPARTMENT OF TRANSPORTATION SEAWAY REGULATIONS AND RULES Regulations § 401.1 Short title. These regulations may be cited as the...

  17. 18 CFR 415.1 - Short title.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 2 2010-04-01 2010-04-01 false Short title. 415.1 Section 415.1 Conservation of Power and Water Resources DELAWARE RIVER BASIN COMMISSION ADMINISTRATIVE MANUAL BASIN REGULATIONS-FLOOD PLAIN REGULATIONS Generally § 415.1 Short title. This part shall be known...

  18. 25 CFR 151.13 - Title examination.

    Science.gov (United States)

    2010-04-01

    ... 25 Indians 1 2010-04-01 2010-04-01 false Title examination. 151.13 Section 151.13 Indians BUREAU OF INDIAN AFFAIRS, DEPARTMENT OF THE INTERIOR LAND AND WATER LAND ACQUISITIONS § 151.13 Title examination. If the Secretary determines that he will approve a request for the acquisition of land from...

  19. Student Achievement in Title I Schools

    Science.gov (United States)

    Diaz, Abby T.

    2017-01-01

    This researcher seeks to answer the following question: How did two elementary Title I schools, identified as "high performing" on the first Smarter Balanced assessment, address elements of Maslow's hierarchy of needs when developing school-wide initiatives to enhance student achievement? Many students in Title I schools face barriers to…

  20. Land Titles and Rice Production in Vietnam

    DEFF Research Database (Denmark)

    Van Den Broeck, Katleen; Newman, Carol; Tarp, Finn

    analysis of plot level rice yields that land titles are indeed important. Only exclusively held titles have the expected positive effects, and the positive effect on yields is found in male headed households. Furthermore, a household level rice yield function reveals that exclusive user rights...

  1. 24 CFR 202.11 - Title I.

    Science.gov (United States)

    2010-04-01

    ... in 24 CFR 25.5. Civil money penalties may be imposed against Title I lenders and mortgagees pursuant... unacceptable risk to the Department; or (iv) Transfer of a Title I loan to a party that does not have a valid...

  2. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  3. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  4. Porosity and thickness effect of porous silicon layer on photoluminescence spectra

    Science.gov (United States)

    Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

  5. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  6. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  7. 24 CFR 203.385 - Types of satisfactory title evidence.

    Science.gov (United States)

    2010-04-01

    ... 24 Housing and Urban Development 2 2010-04-01 2010-04-01 false Types of satisfactory title... Title Waivers § 203.385 Types of satisfactory title evidence. The following types of title evidence shall be satisfactory to the Commissioner: (a) Fee or owner's title policy. A fee or owner's policy of...

  8. Quarterly title list for the period ending June 1980

    International Nuclear Information System (INIS)

    1980-01-01

    The title list contains: a) 17 titles and abstracts of laboratory reports, b) 36 titles of publications (32 with abstracts), c) 13 titles of articles submitted for publication (12 with abstracts), and d) 72 titles of lectures (52 with abstracts.) (GG) [de

  9. Impurities in silicon and their impact on solar cell performance

    NARCIS (Netherlands)

    Coletti, Gianluca

    2011-01-01

    Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

  10. 20 CFR 404.535 - How much will we withhold from your title VIII and title XVI benefits to recover a title II...

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 2 2010-04-01 2010-04-01 false How much will we withhold from your title... Officer § 404.535 How much will we withhold from your title VIII and title XVI benefits to recover a title II overpayment? (a) If past-due benefits are payable to you, we will withhold the lesser of the...

  11. Radiation damage studies for the D0 silicon detector

    International Nuclear Information System (INIS)

    Lehner, F.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  12. Radiation damage studies for the DOe silicon detector

    International Nuclear Information System (INIS)

    Lehner, Frank

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  13. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  14. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  15. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  16. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  17. Formation and properties of porous silicon layers

    International Nuclear Information System (INIS)

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  18. RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration

    NARCIS (Netherlands)

    Lamy, Y.; Jinesh, K.B.; Roozeboom, F.; Gravesteijn, D.J.; Besling, W.F.A.

    2010-01-01

    High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulated, and filled with copper employing a bottom-up

  19. 12 CFR 5.42 - Corporate title.

    Science.gov (United States)

    2010-01-01

    ... 18 U.S.C. 709, regarding false advertising and the misuse of names to indicate a Federal agency, and... the appropriate district office if it changes its corporate title. The notice must contain the old and...

  20. Code of Federal Regulations Title 21

    Data.gov (United States)

    U.S. Department of Health & Human Services — This database contains the most recent revision from the Government Printing Office (GPO) of the Code of Federal Regulations (CFR) Title 21 - Food and Drugs.

  1. The Need for Conciliation under Title VII

    Science.gov (United States)

    Pollard, William E.

    1975-01-01

    The AFL-CIO is committed to the task of eliminating discrimination and injustice in the workplace and is making efforts to expand the Equal Employment Opportunity Commission's conciliation efforts under Title Seven. (MW)

  2. Service Locator - Family Planning Title X

    Data.gov (United States)

    U.S. Department of Health & Human Services — This locator tool will help you find Title X family planning centers that provide high quality and cost-effective family planning and related preventive health...

  3. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  4. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  5. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  6. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  7. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  8. Application of porous silicon in solar cell

    Science.gov (United States)

    Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

    2018-05-01

    Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

  9. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  11. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  12. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  13. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    Neamen, D.; Shedd, W.; Buchanan, B.

    1975-01-01

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  14. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  15. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  16. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  17. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  18. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  19. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  20. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  1. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2013-01-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  2. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.

    2013-03-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  3. Silicon Carbide Power Devices and Integrated Circuits

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

  4. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  5. Morphological and optical properties of n-type porous silicon

    Indian Academy of Sciences (India)

    type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ( J ). Porosity and PS layer thickness, obtained by the gravimetric method, ...

  6. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    The characterization techniques indicated ... Scalable synthesis; microwave plasma; chemical synthesis; nanoparticles. 1. Introduction ... used but very few methods are available to produce silicon and titanium ... current (A). (m3/h). 1. Si. 2.1.

  7. Fabrication and Modification of Nanoporous Silicon Particles

    Science.gov (United States)

    Ferrari, Mauro; Liu, Xuewu

    2010-01-01

    Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

  8. 7 CFR 1927.55 - Title clearance services.

    Science.gov (United States)

    2010-01-01

    ... REGULATIONS TITLE CLEARANCE AND LOAN CLOSING Real Estate Title Clearance and Loan Closing § 1927.55 Title clearance services. (a) Responsibilities of closing agents. Services to be provided to the agency and the borrower by a closing agent in connection with the transaction vary depending on whether a title insurance...

  9. Title of the paper goes here second line

    Indian Academy of Sciences (India)

    %%Please download if these packages are not included %%in your local TeX distribution %%txfonts,balance,textcase,float %% \\begin{document} %%paper title %%For line breaks, \\\\ can be used within title \\title{Title of the paper goes here\\\\ second line} %%author names are separated by comma (,) %%use \\and before ...

  10. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  11. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  12. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  13. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  14. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  15. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  16. Roadmap Through Title XX. Financing Services for Children Through Title XX and Other Programs: Manual 5.

    Science.gov (United States)

    Copeland, William C.; Iversen, Iver A.

    This manual, part of a Hecht Institute four-manual series entitled Financing Children's Services Through Title XX and Related Programs, teaches what Title XX regulations are, what they mean, and what actions and procedures are commanded by them. The first section covers the necessity of rule systems, the characteristics of a good rule system and…

  17. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  18. Silicon carbide microsystems for harsh environments

    CERN Document Server

    Wijesundara, Muthu B J

    2011-01-01

    Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

  19. Carrier mobilities in microcrystalline silicon films

    International Nuclear Information System (INIS)

    Bronger, T.; Carius, R.

    2007-01-01

    For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

  20. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  1. Iron and its complexes in silicon

    Science.gov (United States)

    Istratov, A. A.; Hieslmair, H.; Weber, E. R.

    This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation of these pairs, and the metastability of iron-acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined.

  2. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  3. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  4. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  5. Title List of documents made publicly available

    International Nuclear Information System (INIS)

    1982-07-01

    The Title List of Documents Made Publicly Available is a monthly publication. It contains descriptions of the information received and generated by the US Nuclear Regulatory Commission (NRC). This information includes: (1) docketed material associated with civilian nuclear power plants and other uses of radioactive materials and (2) nondocketed material received and generated by NRC pertinent to its role as a regulatory agency. As used here, docketed does not refer to Court dockets; it refers to the system by which NRC maintains its regulatory records. This series of documents is indexed by a Personal Author Index, a Corporate Source Index, and a Report Number Index. The docketed information contained in the Title List includes the information formerly issued through the Department of Energy publication Power Reactor Docket Information, last published in January 1979. Microfiche of the docketed information listed in the Title List is available for sale on a subscription basis from the National Technical Information Service (NTIS)

  6. Title List of documents made publicly available

    International Nuclear Information System (INIS)

    1982-06-01

    The Title List of Documents Made Publicly Available is a monthly publication. It contains descriptions of the information received and generated by the US Nuclear Regulatory Commission (NRC). This information includes: (1) docketed material associated with civilian nuclear power plants and other uses of radioactive materials and (2) nondocketed material received and generated by NRC pertinent to its role as a regulatory agency. As used here, docketed does not refer to Court dockets; it refers to the system by which NRC maintains its regulatory records. This series of documents is indexed by a Personal Author Index, a Corporate Source Index, and a Report Number Index. The docketed information contained in the Title List includes the information formerly issued throught the Department of Energy publication Power Reactor Docket Information, last published in January 1979. Microfiche of the docketed information listed in the Title List is available for sale on a subscription basis from the National Technical Information Service (NTIS)

  7. Quarterly title list for the period ending September 1976

    International Nuclear Information System (INIS)

    1976-01-01

    The title list of the Max-Planck-Institut fuer Plasmaphysik and the Projektgruppe fuer Laserforschung of the MPG is concerned with the period from July until September 1976, and it contains: a) 12 titles and abstracts of laboratory reports, b) 37 titles of publications (30 abstracts), c) 20 titles of articles submitted for publication (16 abstracts), and d) 25 titles of lectures (12 abstracts). (GG) [de

  8. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  9. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  10. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Refractive index contrast in porous silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Nava, R.; Mora, M.B. de la; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Rio, J.A. del [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Centro Morelense de Innovacion y Transferencia Tecnologica, Consejo de Ciencia y Tecnologia del Estado de Morelos (Mexico)

    2009-07-15

    Two of the most important properties of a porous silicon multilayer for photonic applications are flat interfaces and a relative large refractive index contrast between layers in the optical wavelength range. In this work, we studied the effect of the current density and HF electrolyte concentration on the refractive index of porous silicon. With the purpose of increasing the refractive index contrast in a multilayer, the refractive index of porous silicon produced at low current was studied in detail. The current density applied to produce the low porosity layers was limited in order to keep the electrolyte flow through the multilayer structure and to avoid deformation of layer interfaces. We found that an electrolyte composed of hydrofluoric acid, ethanol and glycerin in a ratio of 3:7:1 gives a refractive index contrast around 1.3/2.8 at 600 nm. Several multilayer structures with this refractive index contrast were fabricated, such as dielectric Bragg mirrors and microcavities. Reflectance spectra of the structures show the photonic quality of porous silicon multilayers produced under these electrochemical conditions. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Energy Information Data Base: serial titles

    International Nuclear Information System (INIS)

    1980-06-01

    The Department of Energy Technical Information Center (TIC) is responsible for creating bibliographic data bases that are used in the announcement and retrieval of publications dealing with all phases of energy. The TIC interactive information processing system makes use of a number of computerized authorities so that consistency can be maintained and indexes can be produced. One such authority is the Energy Information Data Base: Serial Titles. This authority contains the full and abbreviated journal title, country of publication, CODEN, and certain codes. This revision replaces previous revisions of this document

  13. Title list of documents made publicly available

    International Nuclear Information System (INIS)

    1991-01-01

    The Title List of Documents Made Publicly Available is a monthly publication. It contains descriptions of the information received and generated by the US Nuclear Regulatory Commission (NRC). This information includes docketed material associated with civilian nuclear power plants and other uses of radioactive materials and nondocketed material received and generated by NRC pertinent to its role as a regulatory agency. This series of documents is indexed by a Personal Author Index, a Corporate Source Index, and a Report Number Index. The docketed information contained in the Title List includes the information formerly issued though the Department of Energy publication Power Reactor Docket Information, last published in January 1979

  14. Thiolated silicone oil: Synthesis, gelling and mucoadhesive properties

    Science.gov (United States)

    Partenhauser, Alexandra; Laffleur, Flavia; Rohrer, Julia; Bernkop-Schnürch, Andreas

    2015-01-01

    The aim of this study was the development of novel thiolated silicone oils and their evaluation with regard to gelling and mucoadhesive properties. A thiol coupling of 220 ± 14 and 127 ± 33 μmol/g polymer for 3-mercaptopropionic acid (MPA)- and cysteine-coupled silicone oil was determined, respectively. The dynamic viscosity of MPA–silicone raised significantly (p Thiolated silicone oils can be regarded superior in comparison to commonly used silicone oils due to a prolonged retention time in the small intestine as site of action. Gelling and mucoadhesive features are advantageous for antiflatulent as well as mucoprotective biomaterials. Thus, these novel thiomers seem promising for an upgrade of currently available products for the treatment of dyspepsia, reflux oesophagitis and even inflammatory bowel diseases such as ulcerative colitis or Crohn’s disease. PMID:25660565

  15. Factors Influencing Title VII Bilingual Program Institutionalization.

    Science.gov (United States)

    Lewis, Gerald R.; And Others

    1985-01-01

    This study of the primary restraining and driving forces that influence Title VII bilingual education programs found the external environment, the local community, to be the main factor influencing institutionalization and self-renewal. The internal environment--the local school, and the local school's organization or central office, school board,…

  16. What Difference Does a Title Make

    DEFF Research Database (Denmark)

    Balle, Søren Hattesen

    out by Gerard Genette, by naming and “designat[ing] it as precisely as possible and without too much risk of confusion” (Genette, 1997). In accordance with its title the poem thus represents the discourse of a newsreader neutrally reporting the events of war scenario. However, each section of the poem...

  17. 76 FR 60593 - Title VI; Proposed Circular

    Science.gov (United States)

    2011-09-29

    ..., several of them related to ambiguous language in the existing Circular. The proposed Circular reorganizes... regional entity, and inclusive of public and private entities. This term is used exclusively in Chapter IV... revisions to the Title VI Circular. The section that addresses the existing requirement for a Language...

  18. Browse Title Index - African Journals Online

    African Journals Online (AJOL)

    Items 801 - 850 of 1006 ... Issue, Title. Vol 59, No 4 (2017), Spatial patterns and determinants of fertility levels among women of childbearing age in Nigeria, Abstract PDF. Oluwayemisi O. Alaba, Olusanya E. Olubusoye, J.O. Olaomi. Vol 55, No 1 (2013), Spirit(ed) away: preventing foetal alcohol syndrome with motivational ...

  19. 36 CFR 254.15 - Title standards.

    Science.gov (United States)

    2010-07-01

    ...) Conveyances of lands from the United States are made by patent, quitclaim deed, or deed and without express or implied warranties, except as to hazardous substances pursuant to § 254.3 of this subpart. (c) Title... of the existing use(s) authorized under the terms of the grant, permit, easement, or lease. The non...

  20. Providing Transparency to the Title IX Process

    Science.gov (United States)

    Hartle, Terry

    2017-01-01

    When U.S. Secretary of Education Betsy DeVos announced Sept. 7, 2017, that her department would revisit how Title IX rules are enforced with respect to campus sexual assault, she said the first step would be a "transparent notice and comment process" to replace the 2011 "guidance" (and follow up 2014 guidance) that has been…

  1. Software Development Framework For Electronic Land Titles ...

    African Journals Online (AJOL)

    Record keeping is a fundamental activity of public administration. Land Titles management in Nigeria, by virtue of the Land use act 1990, is one of the functions of government. Most of the records hitherto used in managing the records of lands are documented on paper. We carried out an investigation into the suitability of ...

  2. Browse Title Index - African Journals Online

    African Journals Online (AJOL)

    Items 151 - 200 of 771 ... Issue, Title. Vol 33, No 4 (2013), Community-researcher liaisons: the Pathways to Resilience Project Advisory Panel, Abstract PDF. LC Theron. Vol 37, No 3 (2017), Comparing the achievement goal orientation of mathematics learners with and without attention-deficit hyperactivity disorder, Abstract ...

  3. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  4. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  5. Study of porous silicon morphologies for electron transport

    International Nuclear Information System (INIS)

    Pang, Y.; Demroff, H.P.; Elliott, T.S.; Lee, B.; Lu, J.; Madduri, V.B.; Mazumdar, T.K.; McIntyre, P.M.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a single crystal. In addition, a Scanning Tunnelling Microscope (STM) and an Atomic Force Microscope (AFM) were successfully applied to image the 40 angstrom gold film structure which was coated upon a cooled porous silicon layer. By associating the morphology study with the measured emitting current density of the Oxidized Porous Silicon Field Emission Triode (OPSFET), techniques for the surface treatment of porous silicon will be optimized

  6. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    International Nuclear Information System (INIS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-01-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

  7. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  8. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  9. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  10. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  11. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  12. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  13. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  14. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  15. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  16. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  17. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  18. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  19. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  20. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  1. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  2. Progress in the realization of a silicon-CNT photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, A. [CNR-SPIN U.O.S. di Napoli (Italy); Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Castrucci, P. [Dipartimento di Fisica, Universita degli Studi di Roma Tor Vergata,Via della Ricerca Scientifica 1, 00133 Roma (Italy); Cilmo, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); De Crescenzi, M. [Dipartimento di Fisica, Universita degli Studi di Roma Tor Vergata,Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fiandrini, E. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universita degli Studi di Perugia, PiazzaUniversita 1, 06100 Perugia (Italy); Guarino, F. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Via Cintia 2, 80126 Napoli (Italy); Grossi, V. [Dipartimento di Fisica, Universita degli Studi dell' Aquila, Via Vetoio 10, 67100 Coppito, L' Aquila (Italy); Nappi, E. [INFN, Sezione di Bari, e Dipartimento di Fisica, Universita degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); Passacantando, M. [Dipartimento di Fisica, Universita degli Studi dell' Aquila, Via Vetoio 10, 67100 Coppito, L' Aquila (Italy); Pignatel, G. [INFN, Sezione di Perugia e Dipartimento di Fisica, Universita degli Studi di Perugia, PiazzaUniversita 1, 06100 Perugia (Italy); and others

    2012-12-11

    The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm.

  3. Post-silicon and runtime verification for modern processors

    CERN Document Server

    Wagner, Ilya

    2010-01-01

    The purpose of this book is to survey the state of the art and evolving directions in post-silicon and runtime verification. The authors start by giving an overview of the state of the art in verification, particularly current post-silicon methodologies in use in the industry, both for the domain of processor pipeline design and for memory subsystems. They then dive into the presentation of several new post-silicon verification solutions aimed at boosting the verification coverage of modern processors, dedicating several chapters to this topic. The presentation of runtime verification solution

  4. Studying the noise parameters of thin-film silicon resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1986-01-01

    The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

  5. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  6. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  7. Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

    Science.gov (United States)

    Yoo, H. I.; Iles, P. A.; Tanner, D. P.

    1979-01-01

    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

  8. Suppression of irradiation effects in gold-doped silicon detectors

    International Nuclear Information System (INIS)

    McPherson, M.; Sloan, T.; Jones, B.K.

    1997-01-01

    Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

  9. 24 CFR 203.386 - Coverage of title evidence.

    Science.gov (United States)

    2010-04-01

    ... SINGLE FAMILY MORTGAGE INSURANCE Contract Rights and Obligations Property Title Transfers and Title... the public records, there are not, at such date, any outstanding prior liens, including any past-due...

  10. Monocrystalline silicon solar cells applied in photovoltaic system

    OpenAIRE

    L.A. Dobrzański; A. Drygała; M. Giedroć; M. Macek

    2012-01-01

    Purpose: The aim of the paper is to fabricate the monocrystalline silicon solar cells using the conventional technology by means of screen printing process and to make of them photovoltaic system.Design/methodology/approach: The investigation of current – voltage characteristic to determinate basic electrical properties of monocrystalline silicon solar cells were investigated under Standard Test Condition. Photovoltaic module was produced from solar cells with the largest short-circuit curren...

  11. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  12. Synthesis, properties and reactivity of intramolecular hypercoordinate silicon complexes

    International Nuclear Information System (INIS)

    Nikolin, A A; Negrebetsky, V V

    2014-01-01

    The state of the art of the chemistry of hypercoordinate silicon compounds is analyzed. Published data on the current top-priority approaches to the preparative synthesis of these compounds and on their properties, structures and reactivity are summarized and generalized. Relying on the results obtained by modern physicochemical methods, the possible mechanisms of stereodynamic processes occurring in the coordination units of hypercoordinate silicon complexes are discussed. The bibliography includes 157 references

  13. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  14. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  15. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  16. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  17. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  18. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  19. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  20. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  1. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  2. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  3. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  4. Review of porous silicon preparation and its application for lithium-ion battery anodes

    International Nuclear Information System (INIS)

    Ge, M; Fang, X; Rong, J; Zhou, C

    2013-01-01

    Silicon is of great interest for use as the anode material in lithium-ion batteries due to its high capacity. However, certain properties of silicon, such as a large volume expansion during the lithiation process and the low diffusion rate of lithium in silicon, result in fast capacity degradation in limited charge/discharge cycles, especially at high current rate. Therefore, the use of silicon in real battery applications is limited. The idea of using porous silicon, to a large extent, addresses the above-mentioned issues simultaneously. In this review, we discuss the merits of using porous silicon for anodes through both theoretical and experimental study. Recent progress in the preparation of porous silicon through the template-assisted approach and the non-template approach have been highlighted. The battery performance in terms of capacity and cyclability of each structure is evaluated. (topical review)

  5. No English translation available of title

    International Nuclear Information System (INIS)

    Quinones Gonzalez, Jose A.; Puerto Rico U., Mayaguez

    2005-01-01

    The purpose of this work is to improve the reconstruction techniques of the decays of the particles that contain charm in the quark composition using the information of the Target Silicon Detector of the experiment E831 (FOCUS). That experiment runs during 1997 to 1998 in Fermilab National Laboratory. The objective of the experiment was improving the understanding of the particles that contain charm. Adding the Target Silicon Detector information in the reconstruction process of the primary vertex the position error. This reduction produces an improvement in the mass signal and the knowledge of the charm particles properties. This ad to the possibility's that in other analysis will use the techniques developed in this work

  6. Amorphous silicon-based microchannel plates

    International Nuclear Information System (INIS)

    Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

    2012-01-01

    Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

  7. 14 CFR 1245.109 - Assignment of title to NASA.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 5 2010-01-01 2010-01-01 false Assignment of title to NASA. 1245.109... INTELLECTUAL PROPERTY RIGHTS Patent Waiver Regulations § 1245.109 Assignment of title to NASA. (a) The instrument of waiver set forth in § 1245.115(c) shall be voided by NASA with respect to the domestic title to...

  8. Title IX: With New Opportunities, Girls' Interest Rises

    Science.gov (United States)

    Toporek, Bryan

    2012-01-01

    On June 23, 1972, President Richard M. Nixon signed into law Title IX of the Education Amendments of 1972, which prohibits gender discrimination in any federally financed education program or activity. Title IX is far-reaching, but the law is most often associated with school and college athletics. Title IX allows schools to prove their athletic…

  9. Exploring New Directions: Title I in the Year 2000.

    Science.gov (United States)

    Puma, Michael J.; Drury, Darrel W.

    This report takes stock of the present Title I program, identifies the most promising approaches to educating the nation's disadvantaged children, and offers guidance to policymakers seeking to improve Title I's effectiveness. The report draws upon hundreds of studies, evaluations, and other documents, and details the evolution of the Title I…

  10. 40 CFR 300.220 - Related Title III issues.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 27 2010-07-01 2010-07-01 false Related Title III issues. 300.220 Section 300.220 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SUPERFUND, EMERGENCY... PLAN Planning and Preparedness § 300.220 Related Title III issues. Other related Title III requirements...

  11. 77 FR 5396 - Recordkeeping and Reporting Requirements Under Title VII, the ADA, and GINA

    Science.gov (United States)

    2012-02-03

    ... 2008 (GINA) into law. Title II of GINA protects job applicants, current and former employees, labor... creation of any documents or impose any reporting requirements. It imposes the same record retention... reports or the creation of new documents; it merely requires retention of documents that the employer has...

  12. The BELLE silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Alimonti, G.; Aihara, H.; Alexander, J.; Asano, Y.; Bakich, A.; Bozek, A.; Banas, E.; Browder, T.; Dragic, J.; Fukunaga, C.; Gordon, A.; Guler, H.; Everton, C.; Heenan, E.; Haba, J.; Hazumi, M.; Hastings, N.; Hara, T.; Hojo, T.; Higuchi, T.; Iwai, G.; Ishino, H.; Jalocha, P.; Korotuschenko, K.; Kaneko, J.; Kapusta, P.; Kawasaki, T.; Lange, J.S.; Li, Y.; Marlow, D.; Moloney, G.; Moffitt, L.; Mori, S.; Matsubara, T.; Nakadaira, T.; Nakamura, T.; Natkaniec, Z.; Okuno, S.; Olsen, S.; Ostrowicz, W.; Palka, H.; Peak, L.S.; Ryuko, J.; Rozanska, M.; Sevior, M.; Shimada, J.; Sumisawa, K.; Stock, R.; Stanic, S.; Swain, S.; Taylor, G.; Takasaki, F.; Tajima, H.; Trabelsi, K.; Tamura, N.; Tanaka, J.; Tanaka, M. E-mail: tanakam@post.kek.jp; Takahashi, S.; Tomura, T.; Tsuboyama, T.; Tsujita, Y.; Varner, G.; Varvell, K.E.; Watanabe, Y.; Yamamoto, H.; Yamada, Y.; Yokoyama, M.; Zhao, H.; Zontar, D

    2000-10-11

    A silicon vertex detector has been developed for the BELLE experiment at the KEK B-factory to be used to determine the relative displacements of B-meson decay vertices for CP violation measurements. The device has been successfully installed and operated with high-luminosity beam conditions. The average strip yield is larger than 96%, including the preamplifier electronics yield and the detector is currently working stably with a signal-to-noise ratio of 17-40. The measured impact parameter resolution agrees with expectations based on Monte Carlo simulations, and the measured D{sup 0} lifetime is in good agreement with the particle data group's average of other measurements. Several B{yields}J/{psi}K events produced at the {upsilon}(4S) resonance have been detected and separate decay vertices have been found.

  13. Optical modelling of thin-film silicon solar cells deposited on textured substrates

    International Nuclear Information System (INIS)

    Krc, J.; Zeman, M.; Smole, F.; Topic, M.

    2004-01-01

    Optical modelling is used to investigate effects of light scattering in amorphous silicon and microcrystalline silicon solar cells. The role of enhanced haze parameter and different angular distribution function of scattered light is analyzed. Results of optical simulation show that enhanced haze parameter compared to that of Asahi U-type SnO 2 :F does not improve external quantum efficiency and short-circuit current density of amorphous silicon solar cell significantly, whereas for microcrystalline silicon solar cell the improvement is larger. Angular distribution function affects the external quantum efficiency and the short-circuit current density significantly

  14. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent

    2017-10-09

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  15. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2017-01-01

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  16. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  17. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  18. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  19. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  20. Employment discrimination implications of genetic screening in the workplace under Title VII and the Rehabilitation Act.

    Science.gov (United States)

    Canter, E F

    1984-01-01

    The emergence of genetic screening techniques will permit employers to exclude hypersusceptible individuals from potentially hazardous workplace environments. The denial of employment opportunities to these individuals, however, may constitute discrimination. This Note analyzes genetic screening cases with respect to currently available remedies contained in Title VII of the Civil Rights Act of 1964 and the Rehabilitation Act of 1973. The Note concludes that Title VII claims may succeed but only in limited circumstances and that Rehabilitation Act claims will encounter numerous obstacles to relief. Additionally, the Note discusses some of the implications of the use of genetic screening in the workplace.