Doped indium nitride thin film by sol-gel spin coating method

Science.gov (United States)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

Energy Technology Data Exchange (ETDEWEB)

Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

2009-07-01

Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

Antibacterial Properties of Titanate Nano fiber Thin Films Formed on a Titanium Plate

International Nuclear Information System (INIS)

Yada, M.; Inoue, Y.; Morita, T.; Torikai, T.; Watari, T.; Noda, I.; Hotokebuchi, T.

2013-01-01

A sodium titanate nano fiber thin film and a silver nanoparticle/silver titanate nano fiber thin film formed on the surface of a titanium plate exhibited strong antibacterial activities against methicillin-resistant Staphylococcus aureus, which is one of the major bacteria causing in-hospital infections. Exposure of the sodium titanate nano fiber thin film to ultraviolet rays generated a high antibacterial activity due to photo catalysis and the sodium titanate nano fiber thin film immediately after its synthesis possessed a high antibacterial activity even without exposure to ultraviolet rays. Elution of silver from the silver nanoparticle/silver titanate nano fiber thin film caused by the silver ion exchange reaction was considered to contribute substantially to the strong antibacterial activity. The titanate nano fiber thin films adhered firmly to titanium. Therefore, these titanate nano fiber thin film/titanium composites will be extremely useful as implant materials that have excellent antibacterial activities.

Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

International Nuclear Information System (INIS)

Trujillo, Nathan A.; Oldinski, Rachael A.; Ma, Hongyan; Bryers, James D.; Williams, John D.; Popat, Ketul C.

2012-01-01

Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at − 700 eV. For silver-doped films, two concentrations of silver (∼ 0.5 wt.% and ∼ 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with ∼ 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with ∼ 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: ► We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. ► Silver-doped hydroxyapatite thin films on titanium were developed. ► The thin films showed the ability to control the concentration of silver that is doped within the

Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

Energy Technology Data Exchange (ETDEWEB)

Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

2017-05-15

The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Pulsed Laser Deposition Processing of Improved Titanium Nitride Coatings for Implant Applications

Science.gov (United States)

Haywood, Talisha M.

Recently surface coating technology has attracted considerable attention of researchers to develop novel coatings with enhanced functional properties such as hardness, biocompatibility, wear and corrosion resistance for medical devices and surgical tools. The materials currently being used for surgical implants include predominantly stainless steel (316L), cobalt chromium (Co-Cr), titanium and its alloys. Some of the limitations of these implants include improper mechanical properties, corrosion resistance, cytotoxicity and bonding with bone. One of the ways to improve the performance and biocompatibility of these implants is to coat their surfaces with biocompatible materials. Among the various coating materials, titanium nitride (TiN) shows excellent mechanical properties, corrosion resistance and low cytotoxicity. In the present work, a systematic study of pulsed laser ablation processing of TiN coatings was conducted. TiN thin film coatings were grown on commercially pure titanium (Ti) and stainless steel (316L) substrates at different substrate temperatures and different nitrogen partial pressures using the pulsed laser deposition (PLD) technique. Microstructural, surface, mechanical, chemical, corrosion and biological analysis techniques were applied to characterize the TiN thin film coatings. The PLD processed TiN thin film coatings showed improvements in mechanical strength, corrosion resistance and biocompatibility when compared to the bare substrates. The enhanced performance properties of the TiN thin film coatings were a result of the changing and varying of the deposition parameters.

Aluminum nitride and nanodiamond thin film microstructures

Energy Technology Data Exchange (ETDEWEB)

Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

2010-07-01

In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

Microstructural control of thin-film diffusion-brazed titanium

International Nuclear Information System (INIS)

Wells, R.R.

1976-01-01

This study was designed to determine what parameters should be controlled to achieve quality joints of good toughness and high strength in titanium alloys. Emphasis was placed upon studying those parameters which provided tough joints compatible with the titanium base metal being joined. This paper is concerned with thin-film diffusion brazing based upon the eutectic system formed between copper and titanium. In order to control the joint microstructure, the copper diffusion rates and the beta-phase decomposition kinetics were studied. This information was used to produce various types of microstructures in test specimens. These were then evaluated to select the best microstructures for toughness and strength which were compatible with the titanium alloys. Results show that it is possible to accurately control properties of joints produced by thin-film diffusion brazing. This is done by controlling the initial copper content and the time-temperature parameters used in processing. Alloys studied were Ti--8Al--1Mo--1V and Ti--6Al--4V

Epitaxial ternary nitride thin films prepared by a chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

Directory of Open Access Journals (Sweden)

Szwachta G.

2016-06-01

Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

DEFF Research Database (Denmark)

Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

2017-01-01

Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

Deposition of titanium nitride on Si(1 0 0) wafers using plasma focus

International Nuclear Information System (INIS)

Hussain, Tousif; Ahmad, R.; Khan, I.A.; Siddiqui, Jamil; Khalid, Nida; Bhatti, Arshad Saleem; Naseem, Shahzad

2009-01-01

Titanium nitride thin films were deposited on Si(1 0 0) substrates by using a low energy (2.3 KJ) Mather-type plasma focus device. The composition of the deposited films was characterized by X-ray diffraction (XRD). The crystallite size has strong dependence on the numbers of focus shots. The crystallinity of TiN thin films is found to increase with increasing the number of focus shots. The effect of different number of focus shots on micro structural changes of thin films was characterized by Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). SEM results showed net-like structure for film deposited for 15 numbers of shots, which are elongated grains of Si 3 N 4 in amorphous form embedded into TiN crystals. The average surface roughness was calculated from AFM images of the thin films. These results indicated that the average surface roughness increased for films deposited with increased number of focus shots. The least crystallite size and roughness are observed for film deposited with 25 focus shots.

Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

Science.gov (United States)

Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

2016-08-01

The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

Electrochemical capacitance performance of titanium nitride nanoarray

Energy Technology Data Exchange (ETDEWEB)

Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

2013-12-01

Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

Titanium nitride deposition in titanium implant alloys produced by powder metallurgy

International Nuclear Information System (INIS)

Henriques, V.A.R.; Cairo, C.A.A.; Faria, J.; Lemos, T.G.; Galvani, E.T.

2009-01-01

Titanium nitride (TiN) is an extremely hard material, often used as a coating on titanium alloy, steel, carbide, and aluminum components to improve wear resistance. Electron Beam Physical Vapor Deposition (EB-PVD) is a form of deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum, producing a thin film in a substrate. In this work are presented results of TiN deposition in targets and substrates of Ti (C.P.) and Ti- 13 Nb- 13 Zr obtained by powder metallurgy. Samples were produced by mixing of hydride metallic powders followed by uniaxial and cold isostatic pressing with subsequent densification by sintering between 900°C up to 1400 °C, in vacuum. The deposition was carried out under nitrogen atmosphere. Sintered samples were characterized for phase composition, microstructure and microhardness by X-ray diffraction, scanning electron microscopy and Vickers indentation, respectively. It was shown that the samples were sintered to high densities and presented homogeneous microstructure, with ideal characteristics for an adequate deposition and adherence. The film layer presented a continuous structure with 15μm. (author)

Niobium Nitride Thin Films and Multilayers for Superconducting Radio Frequency Cavities

Science.gov (United States)

Roach, William; Beringer, Douglas; Li, Zhaozhu; Clavero, Cesar; Lukaszew, Rosa

2013-03-01

Niobium nitride in thin film form has been considered for a number of applications including multi-layered coatings onto superconducting radio frequency cavities which have been proposed to overcome the fundamental accelerating gradient limit of ~50 MV/m in niobium based accelerators. In order to fulfill the latter application, the selected superconductor's thermodynamic critical field, HC, must be larger than that of niobium and separated from the Nb surface by an insulating layer in order to shield the Nb cavity from field penetration and thus allow higher field gradients. Thus, for the successful implementation of such multilayered stack it is important to consider not just the materials inherent properties but also how these properties may be affected in thin film geometry and also by the specific deposition techniques used. Here, we show the results of our correlated study of structure and superconducting properties in niobium nitride thin films and discuss the shielding exhibited in NbN/MgO/Nb multilayer samples beyond the lower critical field of Nb for the first time. This work was funded by the Defense Threat Reduction Agency (HDTRA-10-1-0072).

Atmospheric pressure chemical vapour deposition of the nitrides and oxynitrides of vanadium, titanium and chromium

International Nuclear Information System (INIS)

Elwin, G.S.

1999-01-01

A study has been made into the atmospheric pressure chemical vapour deposition of nitrides and oxynitrides of vanadium, titanium and chromium. Vanadium tetrachloride, vanadium oxychloride, chromyl chloride and titanium tetrachloride have been used as precursors with ammonia, at different flow conditions and temperatures. Vanadium nitride, vanadium oxynitride, chromium oxynitride, titanium/vanadium nitride and titanium/chromium oxynitride have been deposited as thin films on glass. The APCVD reaction of VCl 4 and ammonia leads to films with general composition VN x O y . By raising the ammonia concentration so that it is in excess (0.42 dm 3 min -1 VCl 4 with 1.0 dm 3 min -1 NH 3 at 500 deg. C) a film has been deposited with the composition VN 0.8 O 0.2 . Further investigation discovered similar elemental compositions could be reached by deposition at 350 deg. C (0.42 dm 3 min -1 VCl 4 with 0.5 dm 3 min -1 NH 3 ), followed by annealing at 650 deg. C, and cooled under a flow of ammonia. Only films formed below 400 deg. C were found to contain carbon or chlorine ( 3 and ammonia also lead to films of composition VN x O y the oxygen to nitrogen ratios depending on the deposition conditions. The reaction Of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.2 dm 3 min -1 ) at 500 deg. C lead to a film of composition VN 0. 47O 1.06 . The reaction of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.5 dm 3 min -1 ) at 650 deg. C lead to a film of composition VN 0.63 O 0.41 . The reaction of chromyl chloride with excess ammonia led to the formation of chromium oxide (Cr 2 O 3 ) films. Mixed metal films were prepared from the reactions of vanadium tetrachloride, titanium tetrachloride and ammonia to prepare V x Ti y N z and chromyl chloride, titanium tetrachloride and ammonia to form TiCr x O y N z . Both reactions produced the intended mixed coating but it was found that the vanadium / titanium nitride contained around 10 % vanadium whatever the conditions used. Oxygen contamination

Coating of Titanium Nitride on Stainless Steel Targets by a 4 kJ Plasma Focus Device

Science.gov (United States)

Omrani, M.; Habibi, M.; Amrollahi, R.

2012-08-01

Titanium nitride thin films were deposited on stainless steel (SS316L) targets by using a 4 kJ plasma focus device. The corresponding energy flux delivered to SS316L surface is estimated to be 2.69 × 1013 kev cm-3 ns-1. X-ray diffraction analysis reveals the formation of a nanocrystalline titanium nitride coating on the surface of targets. Thickness of the elements found on the surface of treated samples which are obtained by Rutherford backscattering spectrometry analysis (RBS) were (×1015 at/cm2) .45% Ti, 50% N and 5% Fe. Scanning electron microscopy was used to indicate changes in surface morphology. Existence of grains in different size confirms the formation of TiN crystals on the surface of targets.

Titanium oxide nanocoating on a titanium thin film deposited on a glass substrate

Energy Technology Data Exchange (ETDEWEB)

Kotsedi, L., E-mail: kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Cummings, F.R. [University of the Western Cape, Electron Microscopy Unit, Physics Department, Bellville 7535, Cape Town (South Africa); Turco, S. Lo; Ntwaeaborwa, O.M. [Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy Via Giovanni Pascoli, 70/3, 20133 Milano (Italy); Ramponi, R. [Institute for Photonics and Nanotechnologies (IFN)-CNR, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, PO Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS, National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape (South Africa)

2016-03-31

Thin films of titanium were deposited on a glass substrate using electron beam evaporator. Femtosecond laser pulses were focused on the surface of the films, and the samples were scanned while mounted on the motorized computer-controlled motion stage to produce an areal modification of the films. X-ray diffraction of the laser-patterned samples showed evidence of the formation of a γ-Ti{sub 3}O{sub 5} with a monoclinic phase. Rutherford backscattering spectrometry simulation showed that there is an increase in the oxygen concentration as the average laser fluence is increased. Time of flight secondary ions mass spectrometry analysis showed an even distribution of the titanium and oxygen ions on the sample and also ionized molecules of the oxides of titanium were observed. The formation of the oxide of titanium was further supported using the UV–Vis-NIR spectroscopy, which showed that for 0.1 J/cm{sup 2} fluence, the laser-exposed film showed the electron transfer band and the d–d transition peak of titanium was observed at lower wavelengths. - Highlights: • γ-Ti{sub 3}O{sub 5} formed using femtosecond laser. • Fluence and oxygen relation were studied. • Nanoflakes of γ-Ti{sub 3}O{sub 5} were observed under HRSEM.

Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

International Nuclear Information System (INIS)

Dubois, Marc-Alexandre; Muralt, Paul

2001-01-01

Polycrystalline aluminum nitride thin films were deposited onto platinum, aluminum, and titanium electrodes by reactive magnetron sputtering in the pulsed direct current mode. The films exhibited all a columnar microstructure and a c-axis texture. The built-in stress and the piezoelectric properties of these films were studied as a function of both the processing conditions and the electrode material. Stress was found to be very much dependent on the growth conditions, and values ranging from strong compression to high tension were observed. The piezoelectric d 33,f coefficient was shown to rely on substrate quality and ionic bombardment: The nucleation surface must be stable with regard to the nitrogen plasma and present a hexagonal symmetry and, on the other hand, enough energy must be delivered to the growing film through ionic bombardment. [copyright] 2001 American Institute of Physics

Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

2013-01-01

We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Nano Indentation Inspection of the Mechanical Properties of Gold Nitride Thin Films

Directory of Open Access Journals (Sweden)

Armen Verdyan

2007-10-01

Full Text Available The morphology and the local mechanical properties of gold nitride thin films were studied by atomic force microscope (AFM. Gold nitride films were deposited for the first time on silicon substrate without any buffer layer at room temperature by reactive pulsed laser ablation deposition (RPLD. The films were fabricated on (100 Si wafers by RPLD technique in which KrF excimer laser was used to ablate a gold target in N2 atmosphere (0.1 GPa-100 Pa and ambient temperature. Scanning electron microscopy (SEM and atomic force microscopy inspections showed that the films were flat plane with rms roughness in the range of 35.1 nm-3.6 nm, depending on the deposition pressure. Rutherford backscattering spectrometry (RBS and energy dispersion spectroscopy (EDS used to detect the nitrogen concentration in the films, have revealed a composition close to Au3N. The film

Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

International Nuclear Information System (INIS)

Chen, Chao-Nan; Huang, Jung-Jie

2013-01-01

This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

Science.gov (United States)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

International Nuclear Information System (INIS)

Pedrero, E.; Vigil, E.; Zumeta, I.

1999-01-01

The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

Thermal decomposition of titanium deuteride thin films

International Nuclear Information System (INIS)

Malinowski, M.E.

1983-01-01

The thermal desorption spectra of deuterium from essentially clean titanium deuteride thin films were measured by ramp heating the films in vacuum; the film thicknesses ranged from 20 to 220 nm and the ramp rates varied from 0.5 to about 3 0 C s - 1 . Each desorption spectrum consisted of a low nearly constant rate at low temperatures followed by a highly peaked rate at higher temperatures. The cleanliness and thinness of the films permitted a description of desorption rates in terms of a simple phenomenological model based on detailed balancing in which the low temperature pressure-composition characteristics of the two-phase (α-(α+#betta#)-#betta#) region of the Ti-D system were used as input data. At temperatures below 340 0 C the model predictions were in excellent agreement with the experimentally measured desorption spectra. Interpretations of the spectra in terms of 'decomposition trajectories'' are possible using this model, and this approach is also used to explain deviations of the spectra from the model at temperatures of 340 0 C and above. (Auth.)

Deuteriding of thin titanium films: the effect of carbon monoxide surface contamination

International Nuclear Information System (INIS)

Malinowski, M.W.

1976-02-01

The effect of adsorbed CO on the deuteriding of thin titanium films at room temperature was measured at D 2 pressures between 10 to 25 mtorr on films contaminated with CO exposures ranging between approximately 10 -8 torr-seconds (''clean'') to 10 -4 torr-seconds. In all measurements, for deuterium/titanium atom ratios greater than .2, the deuteriding appeared to be initally limited by the sticking of D 2 on the clean or contaminated titanium deuteride surface; the effective sticking coefficient on a clean titanium deuteride surface was approximately 3 x 10 -3 , while on a surface contaminated with 10 -4 torr-seconds of CO, the coefficient was reduced to approximately, 2 x 10 -4 . The pumping speeds of Ti films were dramatically different when the films were evaporated over TiD 2 . These changes were attributed to the presence of deuterium which diffused from the substrate film into the overlayer film

Optical properties of titanium trisulphide (TiS3) thin films

International Nuclear Information System (INIS)

Ferrer, I.J.; Ares, J.R.; Clamagirand, J.M.; Barawi, M.; Sánchez, C.

2013-01-01

Titanium trisulphide thin films have been grown on quartz substrates by sulphuration of electron-beam evaporated Ti layers (d ∼ 300 nm) in a vacuum sealed ampoule in the presence of sulphur powder at 550 °C for different periods of time (1 to 20 h). Thin films were characterized by X-ray diffraction, energy dispersive analyses of X-ray and scanning electron microscopy. Results demonstrate that films are composed by monoclinic titanium trisulphide. Films show n-type conductivity with a relatively high resistivity (ρ ∼ 4 ± 2 Ω·cm) and high values of the Seebeck coefficient (− 600 μV/K) at room temperature. Values of the optical absorption coefficient about α ∼ 10 5 cm −1 , determined from reflectance and transmittance measurements, have been obtained at photon energies hυ > 2 eV. The absorption coefficient dependence on the photon energy in the range of 1.6–3.0 eV hints the existence of a direct transition with an energy gap between 1.35 and 1.50 eV. By comparing these results with those obtained from bulk TiS 3 , a direct transition with lower energy is also found which could have been hidden due to the low value of the absorption coefficient in this energy range. - Highlights: ► Thin films of TiS 3 have been obtained by sulphuration of Ti layers. ► Optical properties of TiS 3 thin films have been determined. ► Optical energy gap of TiS 3 has been obtained. ► Optical properties of bulk TiS 3 have been measured and compared with those of films

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

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Rachana Gupta

2015-09-01

Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

International Nuclear Information System (INIS)

Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

1992-01-01

This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

International Nuclear Information System (INIS)

Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

2000-01-01

It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

International Nuclear Information System (INIS)

Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

2014-01-01

Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

Characterization of poly(Sodium Styrene Sulfonate) Thin Films Grafted from Functionalized Titanium Surfaces

Science.gov (United States)

Zorn, Gilad; Baio, Joe E.; Weidner, Tobias; Migonney, Veronique; Castner, David G.

2011-01-01

Biointegration of titanium implants in the body is controlled by their surface properties. Improving surface properties by coating with a bioactive polymer is a promising approach to improve the biological performance of titanium implants. To optimize the grafting processes, it is important to fully understand the composition and structure of the modified surfaces. The main focus of this study is to provide a detailed, multi-technique characterization of a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film grafted from titanium surfaces via a two-step procedure. Thin titanium films (~50 nm thick with an average surface roughness of 0.9±0.2nm) prepared by evaporation onto silicon wafers were used as smooth model substrates. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) showed that the titanium film was covered with a TiO2 layer that was at least 10nm thick and contained hydroxyl groups present at the outermost surface. These hydroxyl groups were first modified with a 3-methacryloxypropyltrimethoxysilane (MPS) cross linker. XPS and ToF-SIMS showed that a monolayer of the MPS molecules were successfully attached onto the titanium surfaces. The pNaSS film was grafted from the MPS modified titanium through atom transfer radical polymerization. Again, XPS and ToF-SIMS were used to verify that the pNaSS molecules were successfully grafted onto the modified surfaces. Atomic force microscopy analysis showed that the film was smooth and uniformly covered the surface. Fourier transform infrared spectroscopy indicated an ordered array of grafted NaSS molecules were present on the titanium surfaces. Sum frequency generation vibration spectroscopy and near edge X-ray absorption fine structure spectroscopy illustrated that the NaSS molecules were grafted onto the titanium surface with a substantial degree of orientational order in the styrene rings. PMID:21892821

Titanium dioxide thin films by atomic layer deposition: a review

Science.gov (United States)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Low temperature aluminum nitride thin films for sensory applications

Energy Technology Data Exchange (ETDEWEB)

Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

International Nuclear Information System (INIS)

Rebollo P, B.

2001-01-01

The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

Titanium dioxide thin films for high temperature gas sensors

Energy Technology Data Exchange (ETDEWEB)

Seeley, Zachary Mark; Bandyopadhyay, Amit; Bose, Susmita, E-mail: sbose@wsu.ed

2010-10-29

Titanium dioxide (TiO{sub 2}) thin film gas sensors were fabricated via the sol-gel method from a starting solution of titanium isopropoxide dissolved in methoxyethanol. Spin coating was used to deposit the sol on electroded aluminum oxide (Al{sub 2}O{sub 3}) substrates forming a film 1 {mu}m thick. The influence of crystallization temperature and operating temperature on crystalline phase, grain size, electronic conduction activation energy, and gas sensing response toward carbon monoxide (CO) and methane (CH{sub 4}) was studied. Pure anatase phase was found with crystallization temperatures up to 800 {sup o}C, however, rutile began to form by 900 {sup o}C. Grain size increased with increasing calcination temperature. Activation energy was dependent on crystallite size and phase. Sensing response toward CO and CH{sub 4} was dependent on both calcination and operating temperatures. Films crystallized at 650 {sup o}C and operated at 450 {sup o}C showed the best selectivity toward CO.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Directory of Open Access Journals (Sweden)

Ana Luz Muñoz-Rosas

2018-03-01

Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

Science.gov (United States)

Corneille, Jason Stephen

1300 K yielded a stoichiometric film of rm SiO_2. The suboxides are believed to further react with oxygen forming rm SiO_2 at an elevated temperature. The growth of thin metallic iron films on Mo(100) was characterized as a preliminary study to the synthesis of iron oxides. By varying the substrate temperature during either the post or in-situ oxidation process, oxide films consisting of virtually pure phases of rm Fe_2O_3 and FeO can be successfully obtained as well as intermediate phases including rm Fe_3O_4. In addition, fairly discrete phase changes were found corresponding to the thermally induced reduction of the higher oxides. The adsorption of diborane on clean Ru(0001) and on surfaces precovered by ammonia was studied to lay the groundwork for the synthesis of boron nitride thin films. Boron -nitrogen adlayers were formed by exposing B/Ru(0001) surfaces to 5-10 Torr of ammonia or by coadsorbing ammonia and diborane at 90K with subsequent annealing to 600K. The adlayers formed were rich in boron and decomposed at temperatures well above 1100K. Finally, the adsorption and pyrolysis of tetrakis -(dimethylamido)-titanium (TDMAT) on several metal surfaces was studied as a precursor to the synthesis of titanium nitride thin films. TDMAT was found to decompose readily above {~}{480K} on metallic substrates, producing films with high carbon content. However, in the presence of ammonia, well below the threshold of gas-phase reaction ({< }{10^{-4}} Torr), the growth of low carbon-content titanium nitride films proceeds readily, via surface mediated reaction(s) of TDMAT and ammonia between 550-750K. The effects of surface temperature and reagent pressures are reported and discussed.

Corrosion Behavior of Titanium Based Ceramic Coatings Deposited on Steels

OpenAIRE

Ali, Rania

2016-01-01

Titanium based ceramic films are increasingly used as coating materials because of their high hardness, excellent wear resistance and superior corrosion resistance. Using electrochemical and spectroscopic techniques, the electrochemical properties of different coatings deposited on different steels under different conditions were examined in this study. Thin films of titanium nitride (TiN), titanium diboride (TiB2), and titanium boronitride with different boron concentrations (TiBN-1&2) w...

Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

Science.gov (United States)

Achour, Amine; Porto, Raul Lucio; Soussou, Mohamed-Akram; Islam, Mohammad; Boujtita, Mohammed; Aissa, Kaltouma Ait; Le Brizoual, Laurent; Djouadi, Abdou; Brousse, Thierry

2015-12-01

Electrochemical capacitors (EC) in the form of packed films can be integrated in various electronic devices as power source. A fabrication process of EC electrodes, which is compatible with micro-fabrication, should be addressed for practical applications. Here, we show that titanium nitride films with controlled porosity can be deposited on flat silicon substrates by reactive DC-sputtering for use as high performance micro-supercapacitor electrodes. A superior volumetric capacitance as high as 146.4 F cm-3, with an outstanding cycling stability over 20,000 cycles, was measured in mild neutral electrolyte of potassium sulfate. The specific capacitance of the films as well as their capacitance retentions were found to depend on thickness, porosity and surface chemistry of electrodes. The one step process used to fabricate these TiN electrodes and the wide use of this material in the field of semiconductor technology make it promising for miniaturized energy storage systems.

Hydroxyapatite coatings on titanium dioxide thin films prepared by pulsed laser deposition method

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Nakashima, Shouta; Kawazoe, Syuichi; Toma, Tetsuya

2006-01-01

Hydroxyapatite (HAp) coated on titanium dioxide (TiO 2 ) thin films has been developed to supplement the defects of both TiO 2 and HAp. Thin films have been prepared by pulsed laser deposition (PLD) method using HAp and HAp(10%) + TiO 2 targets. X-ray diffraction (XRD) shows that there are many small peaks of Ca 1 0(PO 4 ) 6 (OH) 2 crystal, and no impurity other than HAp is detected in HAp films prepared using pure HAp target. The composition ratio of the film was analyzed by X-ray photoelectron spectroscopy (XPS). HAp coatings on TiO 2 thin films have been prepared using HAp(10%) + TiO 2 targets. XRD and XPS measurements suggest that crystalline HAp + TiO 2 thin films are obtained by the PLD method using HAp(10%) + TiO 2 target

Tc depression and superconductor-insulator transition in molybdenum nitride thin films

Science.gov (United States)

Ichikawa, F.; Makise, K.; Tsuneoka, T.; Maeda, S.; Shinozaki, B.

2018-03-01

We have studied that the Tc depression and the superconductor-insulator transition (SIT) in molybdenum nitride (MoN) thin films. Thin films were fabricated by reactive DC magnetron sputtering method onto (100) MgO substrates in the mixture of Ar and N2 gases. Several dozen MoN thin films were prepared in the range of 3 nm < thickness d < 60 nm. The resistance was measured by a DC four-probe technique. It is found that Tc decreases from 6.6 K for thick films with increase of the normal state sheet resistance {R}{{sq}}{{N}} and experimental data were fitted to the Finkel’stein formula using the bulk superconducting transition temperature Tc 0 = 6.45 K and the elastic scattering time of electron τ = 1.6 × 10‑16 s. From this analysis the critical sheet resistance Rc is found about 2 kΩ, which is smaller than the quantum sheet resistance R Q. This value of Rc is almost the same as those for 2D NbN films. The value of τ for MoN films is also the similar value for NbN films 1.0 × 10‑16 s, while Tc 0 is different from that for NbN films 14.85 K. It is indicated that the mechanism of SIT for MoN films is similar to that of NbN films, while the mean free path ℓ for MoN films is larger than that for NbN films.

Simulated radiation effects in the superinsulating phase of titanium nitride films

Directory of Open Access Journals (Sweden)

Vujisić Miloš Lj.

2011-01-01

Full Text Available This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling.

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Energy Technology Data Exchange (ETDEWEB)

Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

2013-05-01

Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

Peroxy-Titanium Complex-based inks for low temperature compliant anatase thin films.

Science.gov (United States)

Shabanov, N S; Asvarov, A Sh; Chiolerio, A; Rabadanov, K Sh; Isaev, A B; Orudzhev, F F; Makhmudov, S Sh

2017-07-15

Stable highly crystalline titanium dioxide colloids are of paramount importance for the establishment of a solution-processable library of materials that could help in bringing the advantages of digital printing to the world of photocatalysis and solar energy conversion. Nano-sized titanium dioxide in the anatase phase was synthesized by means of hydrothermal methods and treated with hydrogen peroxide to form Peroxy-Titanium Complexes (PTCs). The influence of hydrogen peroxide on the structural, optical and rheological properties of titanium dioxide and its colloidal solutions were assessed and a practical demonstration of a low temperature compliant digitally printed anatase thin film given. Copyright © 2017 Elsevier Inc. All rights reserved.

Thin films by metal-organic precursor plasma spray

International Nuclear Information System (INIS)

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

2009-01-01

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

2002-07-01

We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Optical properties of titanium di-oxide thin films prepared by dip coating method

Science.gov (United States)

Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar

2018-05-01

Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.

Sol-gel synthesis and optical properties of titanium dioxide thin film

Science.gov (United States)

Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali

2018-03-01

The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

Capability of X-ray diffraction for the study of microstructure of metastable thin films

Directory of Open Access Journals (Sweden)

David Rafaja

2014-11-01

Full Text Available Metastable phases are often used to design materials with outstanding properties, which cannot be achieved with thermodynamically stable compounds. In many cases, the metastable phases are employed as precursors for controlled formation of nanocomposites. This contribution shows how the microstructure of crystalline metastable phases and the formation of nanocomposites can be concluded from X-ray diffraction experiments by taking advantage of the high sensitivity of X-ray diffraction to macroscopic and microscopic lattice deformations and to the dependence of the lattice deformations on the crystallographic direction. The lattice deformations were determined from the positions and from the widths of the diffraction lines, the dependence of the lattice deformations on the crystallographic direction from the anisotropy of the line shift and the line broadening. As an example of the metastable system, the supersaturated solid solution of titanium nitride and aluminium nitride was investigated, which was prepared in the form of thin films by using cathodic arc evaporation of titanium and aluminium in a nitrogen atmosphere. The microstructure of the (Ti,AlN samples under study was tailored by modifying the [Al]/[Ti] ratio in the thin films and the surface mobility of the deposited species.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

DEFF Research Database (Denmark)

Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

2015-01-01

Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

Science.gov (United States)

Amin, N. Mohd; Ng, S. S.

2018-01-01

Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

Fabrication and Physical Properties of Titanium Nitride/Hydroxyapatite Composites on Polyether Ether Ketone by RF Magnetron Sputtering Technique

Science.gov (United States)

Nupangtha, W.; Boonyawan, D.

2017-09-01

Titanium nitride (TiN) coatings have been used very successfully in a variety of applications because of their excellent properties, such as the high hardness meaning good wear resistance and also used for covering medical implants. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. This paper aims to explain how to optimize deposition conditions for films synthesis on PEEK by varying sputtering parameters such as nitrogen flow rate and direction, deposition time, d-s (target-to-substrate distance) and 13.56 MHz RF power. The plasma conditions used to deposit films were monitored by the optical emission spectroscopy (OES). Titanium nitride/Hydroxyapatite composite films were performed by gas mixture with nitrogen and argon ratio of 1:3 and target-to-substrate distance at 8 cm. The gold colour, as-deposited film was found on PEEK with high hardness and higher surface energy than uncoated PEEK. X-ray diffraction characterization study was carried to study the crystal structural properties of these composites.

Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

International Nuclear Information System (INIS)

Bhaskaran, M; Sriram, S; Sim, L W

2008-01-01

This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

Energy Technology Data Exchange (ETDEWEB)

Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

2015-06-28

This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

Characterization of boron nitride thin films prepared from a polymer precursor

International Nuclear Information System (INIS)

Chan, V.Z.; Rothman, J.B.; Palladino, P.; Sneddon, L.G.; Composto, R.J.

1996-01-01

Excellent quality boron nitride (BN) thin films on silicon have been produced by a simple procedure involving spincoating solutions of the open-quote open-quote single-source close-quote close-quote polymeric-precursor polyborazylene, (B 3 N 3 H ∼4 ) x , on a silicon substrate, followed by pyrolysis at 900 degree C. Rutherford backscattering spectrometry (RBS) indicates that the B/N ratios are 1.37 and 1.09 for conversions carried out in a vacuum oven at 900 and 1250 degree C, respectively. Forward recoil spectrometry (FRES) showed that the atomic percent of residual hydrogen is 10 and 9%, respectively. Plain-view and cross-sectional scanning electron microscopy (SEM) studies showed that the samples annealed at 900 degree C were clean and uniform in thickness. A thickness of 800x10 15 atoms/cm 2 was determined by ion scattering. Films annealed to 1250 degree C likewise showed a continuous unbroken boron nitride layer, but also exhibited morphological features resulting from reactions of the underlying silicon oxide-silicon interface in the substrate. Auger electron spectroscopy and atomic force microscopy showed that the BN coating produced at this higher temperature remained unbroken but had a surface area of ∼15% covered by dimples 2 endash 7 nm in depth. Compared to typical films made by chemical vapor deposition, BN films produced from this open-quote open-quote single-source close-quote close-quote method have lower hydrogen and carbon concentrations. copyright 1996 Materials Research Society

Zinc oxide films impurified with Ti and prepared by the Sol-gel method

International Nuclear Information System (INIS)

Tirado G, S.; Cazares R, J.M.; Maldonado, A.

2006-01-01

Titanium-doped zinc oxide thin films have been prepared on silicon substrate using the Sol-Gel technique. The structural, morphology, electrical and optical properties of such thin films were studied as a function of titanium concentration (0.5, 1 and 1.5 %) and the thin films thickness. Zinc acetate dihydrate and titanium (VI)-oxy acetylacetonate were used as precursor materials, using 2-methoxyethanol and monoethanolamine as via. The X-ray diffraction spectra show polycrystalline films in all the cases. It can see for all the thin films a preferential growth along the (002) planes where the titanium concentration and also the thin films thickness play an important rule. No structural changes are observed at all. The surface morphology studied shows as the grain size decreases when thin thickness is increases. For titanium concentration of 0.5, 1 and 1.5 % values the grains size increase also. The thin films thickness for titanium concentration of 1.5 % was 500 nm (4v), 400 nm (3v), 180 nm (2v) and 130 nm (1v), values obtained from cross-section micrographs. Highly resistive samples are obtained for substrate soda-lime even showing high transmittance. Better physical properties are required for gas sensors or semitransparent electrodes and other possible applications. (Author)

Local heating with titanium nitride nanoparticles

DEFF Research Database (Denmark)

Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.

2013-01-01

We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

The Investigation of E-beam Deposited Titanium Dioxide and Calcium Titanate Thin Films

Directory of Open Access Journals (Sweden)

Kristina BOČKUTĖ

2013-09-01

Full Text Available Thin titanium dioxide and calcium titanate films were deposited using electron beam evaporation technique. The substrate temperature during the deposition was changed from room temperature to 600 °C to test its influence on TiO2 film formation and optical properties. The properties of CaTiO3 were investigated also. For the evaluation of the structural properties the formed thin ceramic films were studied by X-ray diffraction (XRD, energy dispersive spectrometry (EDS, scanning electron microscopy (SEM and atomic force microscopy (AFM. Optical properties of thin TiO2 ceramics were investigated using optical spectroscope and the experimental data were collected in the ultraviolet-visible and near-infrared ranges with a step width of 1 nm. Electrical properties were investigated by impedance spectroscopy.It was found that substrate temperature has influence on the formed thin films density. The density increased when the substrate temperature increased. Substrate temperature had influence on the crystallographic, structural and optical properties also. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.1805

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

Science.gov (United States)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Comparative study of titanium carbide and nitride coatings grown by cathodic vacuum arc technique

International Nuclear Information System (INIS)

Devia, D.M.; Restrepo-Parra, E.; Arango, P.J.

2011-01-01

Titanium nitride (TiN), titanium carbide (TiC) thin films and TiC/TiN bilayers have been deposited on AISI 304 stainless steel substrates by plasma assisted physical vapor deposition technique - reactive pulsed vacuum arc method. The coatings were characterized in terms of crystalline structure, microstructure and chemical nature by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. Tribological behavior was investigated using ball on disc technique. The average coefficient of friction was measured, showing lower values for the TiN/TiC bilayer. Dynamic wear curves were performed for each coating, observing a better wear resistance for TiN/TiC bilayers, compared to TiN and TiC monolayers. On the other hand, the TiCN formation in the TiN/TiC bilayer was observed, being attributed to the interdiffusion between TiN and TiC at the interface. Moreover, the substrate temperature influence was analysing observing a good behavior at T S = 115 °C.

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2015-11-25

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Energy Technology Data Exchange (ETDEWEB)

Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

2014-04-24

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Decomposition of thin titanium deuteride films: thermal desorption kinetics studies combined with microstructure analysis

NARCIS (Netherlands)

Lisowski, W.F.; Keim, Enrico G.; Kaszkur, Zbigniew; Smithers, M.A.; Smithers, Mark A.

2008-01-01

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy

Development of novel titanium nitride-based decorative coatings by calcium addition

Energy Technology Data Exchange (ETDEWEB)

Hodroj, A. [Institut Jean Lamour, CNRS UMR 7198, Departement CP2S, Ecole des Mines, Parc de Saurupt, CS 14234, 54042 Nancy cedex (France); Pierson, J.F., E-mail: jean-francois.pierson@ijl.nancy-universite.fr [Institut Jean Lamour, CNRS UMR 7198, Departement CP2S, Ecole des Mines, Parc de Saurupt, CS 14234, 54042 Nancy cedex (France)

2011-08-01

Calcium was added into titanium nitride coatings deposited using a hybrid magnetron sputtering-arc evaporation process. The calcium content in the films was adjusted by the variation of the pulsed DC current applied to the Ca sputtering target. X-ray diffraction analyses suggested that the increase of the calcium content induced the partial substitution of titanium atoms by calcium ones in the TiN lattice and a refinement of the grain size. Optical reflectance investigations showed that the absorption band of TiN was shifted towards higher wavelengths and that (Ti,Ca)N coatings may be suitable for decorative applications. Finally, the decrease of the film reflectivity was interpreted as a consequence of a free electron concentration decrease as confirmed from electrical resistivity measurements.

Development of novel titanium nitride-based decorative coatings by calcium addition

International Nuclear Information System (INIS)

Hodroj, A.; Pierson, J.F.

2011-01-01

Calcium was added into titanium nitride coatings deposited using a hybrid magnetron sputtering-arc evaporation process. The calcium content in the films was adjusted by the variation of the pulsed DC current applied to the Ca sputtering target. X-ray diffraction analyses suggested that the increase of the calcium content induced the partial substitution of titanium atoms by calcium ones in the TiN lattice and a refinement of the grain size. Optical reflectance investigations showed that the absorption band of TiN was shifted towards higher wavelengths and that (Ti,Ca)N coatings may be suitable for decorative applications. Finally, the decrease of the film reflectivity was interpreted as a consequence of a free electron concentration decrease as confirmed from electrical resistivity measurements.

Humidity effects on the electrical properties of hexagonal boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Soltani, A. [Institut d' Electronique, de Microelectronique et de Nanotechnologie/CNRS UMR 8520, Cite Scientifique, Avenue Poincare, 59652 Villeneuve d' Ascq (France)]. E-mail: ali.soltani@iemn.univ-lille1.fr; Thevenin, P. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France); Bakhtiar, H. [Faculty of Science, Physics Department, Technology University of Malaysia, Karung Berkunci 791, 80990, Johor Bahru, Johor (Malaysia); Bath, A. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France)]. E-mail: bath@metz.supelec.fr

2005-01-03

Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current-voltage measurements were performed, as a function of humidity, using metal-insulator-semiconductor and metal-insulator-metal structures. Typical resistivities were found in the range 10{sup 13}-10{sup 14} {omega} cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.

MgB2 thin films on silicon nitride substrates prepared by an in situ method

International Nuclear Information System (INIS)

Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

2004-01-01

Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

On the residual stress and picostructure of titanium nitride films. Pt. 1

International Nuclear Information System (INIS)

Perry, A.J.; Valvoda, V.; Rafaja, D.; Williamson, D.L.; Sartwell, B.D.

1992-01-01

Titanium nitride films, dual energy ion implanted with argon or krypton, have been studied with a Seemann-Bohlin fine focus goniometer at grazing angles in the range 2-10. The implantation of 1% of either gas has little effect on the lattice parameters or the residual stress. It is thought that the gas atoms are on substitutional lattice sites and are associated with vacancies created during the implantation process. At 4% of implanted gas, it precipitates out in the form of bubbles; in the case of argon these are crystalline and their lattice parameter is close to that for solid argon as recorded in the literature. The lattice parameters and the residual stresses are affected slightly by the implantation: argon reduces the former and makes the latter more tensile, whereas the krypton has the opposite effects. It is thought that the difference in behavior is due to a difference in size of the bubbles or to the greater compressibility of argon

Combined TiN- and TaN temperature compensated thin film resistors

International Nuclear Information System (INIS)

Malmros, Anna; Andersson, Kristoffer; Rorsman, Niklas

2012-01-01

The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30–200 °C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/°C. The TaN TFR on the other hand exhibited a negative TCR of − 470 ppm/°C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to − 60 and 100 ppm/°C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

Transient Nonlinear Optical Properties of Thin Film Titanium Nitride

Science.gov (United States)

2017-03-23

13] • Chemical composition • Crystal structure and lattice parameters • Defect structure This tuneability will be useful in future engineering ...Nitride SarahKatie Thomas Follow this and additional works at: https://scholar.afit.edu/etd Part of the Materials Science and Engineering Commons This... Thesis is brought to you for free and open access by AFIT Scholar. It has been accepted for inclusion in Theses and Dissertations by an authorized

Effects of palladium coatings on oxygen sensors of titanium dioxide thin films

International Nuclear Information System (INIS)

Castaneda, L.

2007-01-01

Titanium dioxide (TiO 2 -anatase phase) thin films were deposited by the ultrasonic spray pyrolysis technique employing titanium (IV) oxide acetylacetonate (TiO(acac) 2 ) dissolved in pure methanol as a source material. In order to prepare oxygen sensors, TiO 2 thin films were deposited on interdigitated gold electrodes with contacted alumina substrates. Palladium (Pd) coatings were carried out by vacuum thermal evaporation through a metallic mask. The effect of the surface additive (Pd) on the response of the thin film TiO 2 oxygen sensors was monitored in a mixture with zero-grade air. The electrical characterization (monitoring of the electrical surface resistance with the operation temperature) of the sensors in an atmosphere of oxygen (diluted in zero-grade air) was performed in a vacuum chamber (10 -6 Torr), where the gas pressure can be controlled. The films sensitivity was estimated by the following relation: s=R gas -R 0 /R 0 . The response time of the sensor is defined to be the time needed to reach a 0.9R 0 value when the oxygen excess is removed. The gas-sensing properties of TiO 2 sensors in an atmosphere of 10 4 ppm of oxygen were measured between 100 and 450 deg. C. Experimental results obtained using palladium as a surface additive show that the sensitivity reaches a stationary value of 1.18 for O 2 concentration of 100ppm in zero-grade air at 300 deg. C, which is as high as those reported for oxygen sensors prepared with more expensive and complex techniques. The role and activity of palladium coatings incorporated on solid-state oxygen sensors are determined by their chemical state, aggregation form and interaction with the metal-oxide semiconductor

Synthesis and characterization of thin films of Pd/TiO2 with possible applications in photo catalysis

International Nuclear Information System (INIS)

Tirado G, S.; Valenzuela Z, M. A.

2015-10-01

In this paper the synthesis and study of thin films of titanium oxide is reported, as well as those that were surface modified with palladium nanoparticles Pd/TiO 2 . First, the TiO 2 films are grown on substrates of soda-lime glass using chemical sol-gel route and the repeated immersion procedure. The salt precursor titanium oxy-acetylacetonate to 0.2 M, in the solvent 2-methoxyethanol and monoethanolamine was used as stabilizer. The number of used immersions gave an average thickness estimate for these films of 172.8 nm. Second, the series of Pd/TiO 2 films surface modified were obtained from a solution of palladium nitrate dehydrate at low concentration, with the same procedure. The films grown TiO 2 and those surface-modified films were characterized in its structure by X-ray diffraction, morphology by scanning electron microscopy, the topography with atomic force microscopy, optical properties by UV-Vis, among others. Photoluminescence properties and/or possible applications in photo catalysis are reported in this paper. (Author)

Thermal conductivities of thin, sputtered optical films

International Nuclear Information System (INIS)

Henager, C.H. Jr.; Pawlewicz, W.T.

1991-05-01

The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2016-12-01

In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Gallardo-Vega, C.; Cruz, W. de la

2006-01-01

Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10 -2 to 1.3 x 10 -1 Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu 3 N) and x = 0.25 (Cu 4 N) when the nitrogen pressure is 1.3 x 10 -1 and 5 x 10 -2 Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33

Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

2006-09-15

Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

Science.gov (United States)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

Corrosion stability of cermets on the base of titanium nitride

International Nuclear Information System (INIS)

Kajdash, O.N.; Marinich, M.A.; Kuzenkova, M.A.; Manzheleev, I.V.

1991-01-01

Corrosion resistance of titanium nitride and its cermets in 5% of HCl, 7% of HNO 3 , 10% of H 2 SO 4 is studied. It is established that alloys TiN-Ni-Mo alloyed with chromium (from 10 to 15%) possess the highest corrosion resistance. Cermet TiN-Cr has the higher stability than titanium nitride due to formation of binary nitride (Ti, Cr)N

Damage evaluation of proton irradiated titanium deuteride thin films to be used as neutron production targets

Science.gov (United States)

Suarez Anzorena, Manuel; Bertolo, Alma A.; Gagetti, Leonardo; Gaviola, Pedro A.; del Grosso, Mariela F.; Kreiner, Andrés J.

2018-06-01

Titanium deuteride thin films have been manufactured under different conditions specified by deuterium gas pressure, substrate temperature and time. The films were characterized by different techniques to evaluate the deuterium content and the homogeneity of such films. Samples with different concentrations of deuterium, including non deuterated samples, were irradiated with a 150 keV proton beam. Both deposits, pristine and irradiated, were characterized by optical profilometry and scanning electron microscopy.

Solar selective performance of metal nitride/oxynitride based magnetron sputtered thin film coatings: a comprehensive review

Science.gov (United States)

Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao

2018-03-01

Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.

Influence of heat treatment on field emission characteristics of boron nitride thin films

International Nuclear Information System (INIS)

Li Weiqing; Gu Guangrui; Li Yingai; He Zhi; Feng Wei; Liu Lihua; Zhao Chunhong; Zhao Yongnian

2005-01-01

Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10 -4 Pa and the temperature of 800 and 1000 deg. C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 deg. C and disappeared at temperature of 1000 deg. C

Direct bonding of ALD Al₂O₃ to silicon nitride thin films

DEFF Research Database (Denmark)

Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

2017-01-01

microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

International Nuclear Information System (INIS)

Essafti, A.; Abouelaoualim, A.; Fierro, J.L.G.; Ech-chamikh, E.

2009-01-01

Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm 3 with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.

Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

International Nuclear Information System (INIS)

Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

2006-01-01

Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

Properties of ordered titanium templates covered with Au thin films for SERS applications

Energy Technology Data Exchange (ETDEWEB)

Grochowska, Katarzyna, E-mail: kgrochowska@imp.gda.pl [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Sokołowski, Michał; Karczewski, Jakub [Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12 St., 80-233 Gdańsk (Poland); Szkoda, Mariusz [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland); Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12 St., 80-233 Gdańsk (Poland); Śliwiński, Gerard [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14 St., 80-231 Gdańsk (Poland)

2016-12-01

Graphical abstract: - Highlights: • Dimpled Ti substrates prepared via anodization followed by etching. • Highly ordered nano-patterned titanium templates covered with thin Au films. • Enhanced Raman signal indicates on promising sensing material. - Abstract: Currently, roughened metal nanostructures are widely studied as highly sensitive Raman scattering substrates that show application potential in biochemistry, food safety or medical diagnostic. In this work the structural properties and the enhancement effect due to surface enhanced Raman scattering (SERS) of highly ordered nano-patterned titanium templates covered with thin (5–20 nm) gold films are reported. The templates are formed by preparation of a dense structure of TiO{sub 2} nanotubes on a flat Ti surface (2 × 2 cm{sup 2}) and their subsequent etching down to the substrate. SEM images reveal the formation of honeycomb nanostructures with the cavity diameter of 80 nm. Due to the strongly inhomogeneous distribution of the electromagnetic field in the vicinity of the Au film discontinuities the measured average enhancement factor (10{sup 7}–10{sup 8}) is markedly higher than observed for bare Ti templates. The enhancement factor and Raman signal intensity can be optimized by adjusting the process conditions and thickness of the deposited Au layer. Results confirm that the obtained structures can be used in surface enhanced sensing.

Titanium-silicon films prepared by spin and dip-coating

International Nuclear Information System (INIS)

Nassar, Eduardo J.; Ciuffi, Katia J.; Goncalves, Rogeria R.; Messaddeq, Younes; Ribeiro, Sidney J.L.

2003-01-01

The conditions for the preparation of luminescent materials, consisting of Eu 3+ ions entrapped in a titanium matrix, in the form of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hydrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu 3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique. (author)

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

2016-05-01

In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

Energy Technology Data Exchange (ETDEWEB)

Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

2011-10-15

Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

International Nuclear Information System (INIS)

Caicedo, J.C.; Zambrano, G.; Aperador, W.; Escobar-Alarcon, L.; Camps, E.

2011-01-01

Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N 2 gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

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Guler Urcan

2015-01-01

Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

Science.gov (United States)

KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

2017-12-01

The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

Improved stability of titanium based boron-doped chemical vapor deposited diamond thin-film electrode by modifying titanium substrate surface

International Nuclear Information System (INIS)

Lim, P.Y.; Lin, F.Y.; Shih, H.C.; Ralchenko, V.G.; Varnin, V.P.; Pleskov, Yu.V.; Hsu, S.F.; Chou, S.S.; Hsu, P.L.

2008-01-01

The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The pre-roughened Ti-substrates are shown to support more adherent BDD films. It is evident that acid-etching the Ti-substrate involves surface hydrogenation that enhances nucleation and formation of diamond thereon. The prepared BDD film exhibits wide potential window and electrochemical reversibility. It also demonstrated a better long-term electrochemical stability based on the low variation in voltametric background current upon the exposing of the electrodes to repeated cycles of electrochemical metal deposition/stripping process

Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED

DEFF Research Database (Denmark)

Pryds, Nini; Cockburn, D.; Rodrigo, Katarzyna Agnieszka

2008-01-01

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films...... electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED...

Nanoparticulate cerium dioxide and cerium dioxide-titanium dioxide composite thin films on glass by aerosol assisted chemical vapour deposition

International Nuclear Information System (INIS)

Qureshi, Uzma; Dunnill, Charles W.; Parkin, Ivan P.

2009-01-01

Two series of composite thin films were deposited on glass by aerosol assisted chemical vapour deposition (AACVD)-nanoparticulate cerium dioxide and nanoparticulate cerium dioxide embedded in a titanium dioxide matrix. The films were analysed by a range of techniques including UV-visible absorption spectroscopy, X-ray diffraction, scanning electron microscopy and energy dispersive analysis by X-rays. The AACVD prepared films showed the functional properties of photocatalysis and super-hydrophilicity. The CeO 2 nanoparticle thin films displaying photocatalysis and photo-induced hydrophilicity almost comparable to that of anatase titania.

Titanium Matrix Composite Ti/TiN Produced by Diode Laser Gas Nitriding

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Aleksander Lisiecki

2015-01-01

Full Text Available A high power direct diode laser, emitting in the range of near infrared radiation at wavelength 808–940 nm, was applied to produce a titanium matrix composite on a surface layer of titanium alloy Ti6Al4V by laser surface gas nitriding. The nitrided surface layers were produced as single stringer beads at different heat inputs, different scanning speeds, and different powers of laser beam. The influence of laser nitriding parameters on the quality, shape, and morphology of the surface layers was investigated. It was found that the nitrided surface layers consist of titanium nitride precipitations mainly in the form of dendrites embedded in the titanium alloy matrix. The titanium nitrides are produced as a result of the reaction between molten Ti and gaseous nitrogen. Solidification and subsequent growth of the TiN dendrites takes place to a large extent at the interface of the molten Ti and the nitrogen gas atmosphere. The direction of TiN dendrites growth is perpendicular to the surface of molten Ti. The roughness of the surface layers depends strongly on the heat input of laser nitriding and can be precisely controlled. In spite of high microhardness up to 2400 HV0.2, the surface layers are crack free.

Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

CERN Document Server

Sohn, M K; Kim, K H; Yang, S G; Seo, K S

1998-01-01

In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin

2018-04-09

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

KAUST Repository

Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Qi, Zhengbing; Shen, Hao; Wang, Zhoucheng

2018-01-01

Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Azadeh Jafari

2014-07-01

Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

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Kirill O. Bugaev

2012-01-01

Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

Electron microprobe analysis of tantalum--nitride thin films

International Nuclear Information System (INIS)

Stoltz, D.L.; Starkey, J.P.

1979-06-01

Quantitative chemical analysis of 500- and 2000-angstrom tantalum--nitride films on glass substrates has been accomplished using an electron microprobe x-ray analyzer. In order to achieve this analysis, modifications to the microprobe were necessary. A description of the calibration procedure, the method of analysis, and the quantitative results are discussed

Zinc oxide films impurified with Ti and prepared by the Sol-gel method; Peliculas de oxido de zinc impurificadas con Ti y preparadas por el metodo Sol-gel

Energy Technology Data Exchange (ETDEWEB)

Tirado G, S. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Cazares R, J.M.; Maldonado, A. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

2006-07-01

Titanium-doped zinc oxide thin films have been prepared on silicon substrate using the Sol-Gel technique. The structural, morphology, electrical and optical properties of such thin films were studied as a function of titanium concentration (0.5, 1 and 1.5 %) and the thin films thickness. Zinc acetate dihydrate and titanium (VI)-oxy acetylacetonate were used as precursor materials, using 2-methoxyethanol and monoethanolamine as via. The X-ray diffraction spectra show polycrystalline films in all the cases. It can see for all the thin films a preferential growth along the (002) planes where the titanium concentration and also the thin films thickness play an important rule. No structural changes are observed at all. The surface morphology studied shows as the grain size decreases when thin thickness is increases. For titanium concentration of 0.5, 1 and 1.5 % values the grains size increase also. The thin films thickness for titanium concentration of 1.5 % was 500 nm (4v), 400 nm (3v), 180 nm (2v) and 130 nm (1v), values obtained from cross-section micrographs. Highly resistive samples are obtained for substrate soda-lime even showing high transmittance. Better physical properties are required for gas sensors or semitransparent electrodes and other possible applications. (Author)

TiO2 anatase thin films deposited by spray pyrolysis of an aerosol of titanium diisopropoxide

International Nuclear Information System (INIS)

Conde-Gallardo, A.; Guerrero, M.; Castillo, N.; Soto, A.B.; Fragoso, R.; Cabanas-Moreno, J.G.

2005-01-01

Titanium dioxide thin films were deposited on crystalline silicon (100) and fused quartz substrates by spray pyrolysis (SP) of an aerosol, generated ultrasonically, of titanium diisopropoxide. The evolution of the crystallization, studied by X-ray diffraction (XRD), atomic force (AFM) and scanning electron microscopy (SEM), reflection and transmission spectroscopies, shows that the deposition process is nearly close to the classical chemical vapor deposition (CVD) technique, producing films with smooth surface and good crystalline properties. At deposition temperatures below 400 deg. C, the films grow in amorphous phase with a flat surface (roughness∼0.5 nm); while for equal or higher values to this temperature, the films develop a crystalline phase corresponding to the TiO 2 anatase phase and the surface roughness is increased. After annealing at 750 deg. C, the samples deposited on Si show a transition to the rutile phase oriented in (111) direction, while for those films deposited on fused quartz no phase transition is observed

Chemical vapour deposition of thin-film dielectrics

International Nuclear Information System (INIS)

Vasilev, Vladislav Yu; Repinsky, Sergei M

2005-01-01

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

International Nuclear Information System (INIS)

Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

2014-01-01

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

Selective ablation of a titanium nitride film on tungsten carbide substrate using ultrashort laser pulses

International Nuclear Information System (INIS)

Oliveira, Eduardo Spinelli

2017-01-01

Surface coatings are applied to many cutting tools in the metallurgical industry in order to improve cutting efficiency and extend its useful life. In this work, tests were performed to remove the coating of titanium aluminum nitride (TiAlN) on tungsten carbide (WC-Co) pellets, using an ultrashort laser pulses beam. After determination of the damage thresholds of the film and the substrate, were ablated on the surface of the coating lines using two ablation conditions, it was initially operated on the low fluence regime for the film, and later on the low fluence regime of the substrate, far below the threshold of the film, applying high overlapping pulses. A laser induced breakdown spectroscopy (LIBS) system was set up to monitor the materials present in the plasma generated by the laser, but the system did not present sufficient sensitivity to read the low intensity of the plasma generated in the process and was not used. After the analysis of the traces by electron microscopy, optical profilometer and X-ray fluorescence spectroscopy, it was not possible to determine a safe process to carry out the selective removal of the film in question, however, due to the data obtained and observations of the results in some traces, new possibilities were raised, opening the discussion for future work. (author)

Hydrogen insertion in titanium carbide based thin films (nc-TiC{sub x}/a-C:H) - comparison with bulk TiC{sub x}

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Julien; Jaoul, Cédric, E-mail: jaoul@ensil.unilim.fr; Glandut, Nicolas; Lefort, Pierre

2016-08-01

Nanocomposites composed of titanium carbide nanosized grains embedded in an amorphous hydrogenated carbon matrix (nc-TiC{sub x}/a-C:H) are prepared by hybrid Magnetron Sputtering - PECVD process using a titanium metal target and gaseous C{sub 6}H{sub 6}. By controlling the benzene flow rate, thin films with different carbon content are obtained. The structures of nc-TiC{sub x}/a-C:H materials are analyzed by X-ray diffraction, X-ray photoelectron and Raman spectroscopic methods. The electrochemical hydrogen insertion, as studied by cyclic voltammetry, strongly depends on the carbon content in the thin films. The correlation between the hydrogen insertion ability and the structure of materials are discussed. Furthermore, we show that the hydrogen insertion in these thin films reaches values much more significant than in bulk substoichiometric titanium carbide obtained by reactive sintering. - Highlights: • nc-TiC{sub x}/a-C:H thin films are prepared hybrid Magnetron Sputtering - PECVD process. • Different carbon contents are obtained by changing the hydrocarbon flowrate. • Expanded lattice parameter of the TiC{sub x} phase and a-C:H phase are observed. • Electrochemical hydrogen insertion strongly depends on the carbon content. • The maximum insertion is 22 times more important than bulk TiC{sub x}.

Oxidation of nitride films in aqueous solution: Correlation between surface analysis and electrochemical studies

International Nuclear Information System (INIS)

Brown, R.; Alias, M.N.

1994-01-01

Ac impedance and dc polarization tests of 304 stainless steels coated by cathodic arc plasma deposition (CAPD) titanium nitride and zirconium nitride were conducted in aqueous chloride solution. Cyclic polarization data suggested passive films were formed over the nitride coatings which are most likely hydrated titanium oxide and zirconium oxides. ESCA analysis of fresh samples and samples exposed during impedance tests indicated a layer rich in oxygen over the ZrN coating after exposure but not over TiN coating. Chemical shifts in the Zr 3d 5/2 core electrons indicate transformation from ZrN to its oxide; the shifts in Ti 2P 3/2 did not support the change from TiN to its oxide. The influence of these shifts on corrosion protection is documented

Preparation and antibacterial effect of silver-hydroxyapatite/titania nanocomposite thin film on titanium

Energy Technology Data Exchange (ETDEWEB)

Mo Anchun [West China College of Stomatology, Sichuan University, Chengdu 610041 (China)], E-mail: moanchun@163.com; Liao Juan [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Xu Wei [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Arrail-Dental, Shanghai 200122 (China); Xian Suqin [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Li Yubao [Research Center for Nano-Biomaterials, Sichuan University, Chengdu 610064 (China); Bai Shi [West China College of Stomatology, Sichuan University, Chengdu 610041 (China)

2008-11-15

The composite which contains Ag{sup +} and nanosized hydroxyapatite with TiO{sub 2} was deposited onto titanium by dipping method. The morphology, chemical components and structures of the thin film were characterized by XRD, scanning electronic microscope (SEM) and energy dispersive X-ray analysis (EDX). Staphylococcus aureus and Escherichia coli were utilized to test the antibacterial effect. XRD results demonstrated that the films have characteristic diffraction peaks of pure HA. EDX results showed that the deposited films consisted of Ca, P, Ti, O and Ag, all of which distribute uniformly. With regard to the antibacterial effect, 98% of S. aureus and more than 99% of E. coli were killed after 24 h incubation and pictures of SEM showed obviously fewer cells on the surface with coating.

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

International Nuclear Information System (INIS)

Gbordzoe, S.; Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

2014-01-01

The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600 °C to 800 °C, there was an increase in both diameter (25 nm–50 nm) and length (150 nm–250 nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit

Surface modification of titanium by plasma nitriding

Directory of Open Access Journals (Sweden)

Kapczinski Myriam Pereira

2003-01-01

Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

Deposition of titanium nitride layers by electric arc – Reactive plasma spraying method

International Nuclear Information System (INIS)

Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

2013-01-01

Highlights: ► Titanium nitride layers deposited by electric arc – reactive plasma spraying method. ► Deposition of titanium nitride layers on C45 steel at different spraying distances. ► Characterization of the coatings hardness as function of the spraying distances. ► Determination of the corrosion behavior of titanium nitride layers obtained. - Abstract: Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti 2 N) and small amounts of Ti 3 O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

Formation of titanium nitride layers on titanium metal: Results of XPS and AES investigations

International Nuclear Information System (INIS)

Moers, H.; Pfennig, G.; Klewe-Nebenius, H.; Penzhorn, R.D.; Sirch, M.; Willin, E.

1988-09-01

The reaction of titanium metal with gaseous nitrogen and ammonia at temperatures of 890 0 C leads to the formation of nitridic overlayers on the metallic substrate. The thicknesses of the overlayers increase with increasing reaction time. Under comparable conditions ammonia reacts much slower than nitrogen. XPS and AES depth profile analyses show continuous changes of the in-depth compositions of the overlayers. This can be interpreted in terms of a very irregular thickness of the overlayers, an assumption which is substantiated by local AES analyses and by the observation of a pronounced crystalline structure of the substrate after annealing pretreatment, which can give rise to locally different reaction rates. The depth profile is also influenced by the broad ranges of stability of the titanium nitride phases formed during the reaction. The quantitative analysis of the titanium/nitrogen overlayers by AES is difficult because of the overlap of titanium and nitrogen Auger peaks. In quantitative XPS analysis problems arise due to difficulties in defining Ti 2p peak areas. This work presents practical procedures for the quantitative evaluation by XPS and AES of nitridic overlayers with sufficient accuracy. (orig.) [de

Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

Science.gov (United States)

Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

2018-03-01

Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

Enhancement of bioactivity of titanium carbonitride nanocomposite thin films on steels with biosynthesized hydroxyapatite

Directory of Open Access Journals (Sweden)

Thampi VV

2015-10-01

Full Text Available VV Anusha Thampi,1 P Dhandapani,2 Geetha Manivasagam, B Subramanian11Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi, 2Corrosion and Materials Protection Division, Central Electrochemical Reserach Institute, Karaikudi, 3Centre for Bio-Materials Science and Technology, VIT University, Vellore, IndiaAbstract: Thin films of titanium carbonitride (TiCN were fabricated by DC magnetron sputtering on medical grade steel. The biocompatibility of the coating was further enhanced by growing hydroxyapatite crystals over the TiCN-coated substrates using biologically activated ammonia from synthetic urine. The coatings were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy (SEM-energy dispersive spectroscopy, and Raman spectroscopy. The electrochemical behavior of the coatings was determined in simulated body fluid. In addition, hemocompatibility was assessed by monitoring the attachment of platelets on the coating using SEM. The wettability of the coatings was measured in order to correlate with biocompatibility results. Formation of a coating with granular morphology and the preferred orientation was confirmed by SEM and X-ray diffraction results. The hydroxyapatite coating led to a decrease in thrombogenicity, resulting in controlled blood clot formation, hence demonstrating the hemocompatibility of the coating.Keywords: titanium carbonitride thin films, magnetron sputtering, ureolytic bacteria, biocompatibility

Nanostructured Mesoporous Titanium Dioxide Thin Film Prepared by Sol-Gel Method for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

Yu-Chang Liu

2011-01-01

Full Text Available Titanium dioxide (TiO2 paste was prepared by sol-gel and hydrothermal method with various precursors. Nanostructured mesoporous TiO2 thin-film back electrode was fabricated from the nanoparticle colloidal paste, and its performance was compared with that made of commercial P25 TiO2. The best performance was demonstrated by the DSSC having a 16 μm-thick TTIP-TiO2 back electrode, which gave a solar energy conversion efficiency of 6.03%. The ability of stong adhesion on ITO conducting glass substrate and the high surface area are considered important characteristics of TiO2 thin film. The results show that a thin film with good adhesion can be made from the prepared colloidal paste as a result of alleviating the possibility of electron transfer loss. One can control the colloidal particle size from sol-gel method. Therefore, by optimizing the preparation conditions, TiO2 paste with nanoparticle and narrow diameter distribution was obtained.

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

International Nuclear Information System (INIS)

Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

2009-01-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

Energy Technology Data Exchange (ETDEWEB)

Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

2014-02-28

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

[The cytotoxicity of N48 NdFeB magnets coated with titanium-nitride].

Science.gov (United States)

Cao, Xiao-Ming; Hou, Zhi-Ming; Chu, Ming

2008-04-01

To evaluate the effect of N48 NdFeB magnets coated with titanium-nitride on the growth and apoptosis of L929 mouse fibroblast cells, and to determine the material biocompatibility. The NdFeB magnets coated with titanium-nitride, bare NdFeB magnets and ordinary brackets were put into RPMI-1640 to prepare fusions. L929 mouse fibroblast cells were cultivated in the negative control liquid, positive control liquid, 100%, 50% and 25% sample fusions, respectively. The cell proliferation vitality was detected by MTT assay and the relative growth rate was calculated.Cell scatter diagrams of the negative control liquid, 100% titanium-nitride coated magnets fusion and bare magnets fusion were detected by flow cytometry Annexin V/PI double staining method. The ratios of normal cells, early apoptosis, advanced apoptosis and necrosis cells were calculated. The results were analyzed for paired t test using SPSS11.5 software package. The toxic levels of N48 NdFeB coated with titanium-nitride were ranked as 0-1. The toxic levels of bare magnets were ranked as 2. The cell scatter diagrams showed that there was no significant difference in living cell, early apoptosis and necrosis between magnets coated with titanium-nitride and control group. But there was significant difference between the bare magnets group and control group. The N48 NdFeB magnets coated with titanium-nitride have good biocompatibility.

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

International Nuclear Information System (INIS)

Volpi, F.; Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

2014-01-01

In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm 3 , respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ananda Sagari, A.R., E-mail: arsagari@gmail.com [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Malm, Jari [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Laitinen, Mikko [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Rahkila, Paavo [Department of Biology of Physical Activity, P.O. Box 35, FIN-40014 University of Jyväskylä (Finland); Hongqiang, Ma [Department of Health Sciences, P.O. Box 35 (L), FIN-40014 University of Jyväskylä (Finland); Putkonen, Matti [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Beneq Oy, P.O. Box 262, FI-01511 Vantaa (Finland); Karppinen, Maarit [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Whitlow, Harry J.; Sajavaara, Timo [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland)

2013-03-01

Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R{sub rms} values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on rough metal surfaces with a clear dependence of substrate roughness on the Ca/P atomic ratio of thin films. The in vitro cell-culture studies using MC3T3 mouse osteoblast showed a greater coverage of cells on the surface polished with diamond paste in comparison to rougher surfaces after 24 h culture. No statistically significant difference was observed between Ca–P–O coated and un-coated Ti surfaces for the measured roughness value. The deposited 50 nm thick films did not dissolve during the cell culture experiment. - Highlights: ► Atomic layer deposition of Ca–P–O films on abraded Ti substrate ► Surface analysis using Time-Of-Flight Elastic Recoil Detection Analysis ► Dependence of substrate roughness on the Ca/P atomic ratio of thin films ► An increase in Ca/P atomic ratio with decreasing roughness ► Mouse osteoblast showed greater coverage of cells in polished surface.

Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Hsin-Yu Wu

2016-11-01

Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

Characterization of titanium silicide thin films by X-ray diffraction techniques

International Nuclear Information System (INIS)

Morimoto, N.J.

1987-01-01

This thesis deals with characterization techniques of thin films by means of X-ray diffraction. This includes phase identification and residual stress, microstress and crystallite size calculations. The techniques developed were applied on the study of the titanium silicide formation obtained by means of Rapidy Thermal Processing (RTP) pf Ti films deposited on silicon substratum. The different phases were studied in relation with processing temperature and time in one and two anneling steps. The low resistivity TiSi 2 phase was observed for temperature of 700 0 C and higher. The experimental results indicate that the residual stress of TiSi 2 films doesn't vary significantly with the annealing conditions. On the other hand, the microstress is reduced with annealing time at 800 0 C, while the crystallite size is almost not affected. For the microstress and the crystallite size determination technique, two methods were implemented and compared. The Riella's method appeared to be very efficient, while the Gangulle's method seemed to be inadequate, because the results oscillate too much [pt

Fully CMOS-compatible titanium nitride nanoantennas

Energy Technology Data Exchange (ETDEWEB)

Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

2016-02-01

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

CERN Document Server

Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

1999-01-01

We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

Science.gov (United States)

Reyes, R.; Cremona, M.; Achete, C. A.

2011-01-01

Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

2011-01-01

Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

International Nuclear Information System (INIS)

Reyes, R; Cremona, M; Achete, C A

2011-01-01

Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq 3 ) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq 3 /Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

Tailoring the stress-depth profile in thin films; the case of γ'-Fe4N1-x

International Nuclear Information System (INIS)

Wohlschloegel, M.; Welzel, U.; Mittemeijer, E.J.

2011-01-01

Homogeneous γ'-Fe 4 N 1-x thin films were produced by gas through-nitriding of iron thin films (thickness 800 nm) deposited onto Al 2 O 3 substrates by Molecular Beam Epitaxy. The nitriding parameters were chosen such that the nitrogen concentration within the γ' thin films was considerably lower (x ∼ 0.05) than the stoichiometric value (x = 0). X-ray diffraction stress analysis at constant penetration depths performed after the nitriding step revealed the presence of tensile stress parallel to the surface; the tensile stress was shown to be practically constant over the entire film thickness. For further nitriding treatments, the parameters were adjusted such that nitrogen enrichment occurred near the specimen surface. The depth-dependent nitrogen enrichment could be monitored by evaluating the strain-free lattice parameter of γ' as a function of X-ray penetration depth and relating it to the nitrogen concentration employing a direct relation between lattice parameter and nitrogen concentration. The small compositional variations led to distinct characteristic stress-depth profiles. The stress changes non-monotonously with depth in the film as could be shown by non-destructive X-ray diffraction stress analysis at constant penetration depths. This work demonstrates that by a specific choice of a first and a subsequent nitriding treatment (employing different nitriding potentials and/or different temperatures for both treatments) controlled development of residual stress profiles is possible in thin iron-nitride surface layers.

Titanium nitride plasma-chemical synthesis with titanium tetrachloride raw material in the DC plasma-arc reactor

Science.gov (United States)

Kirpichev, D. E.; Sinaiskiy, M. A.; Samokhin, A. V.; Alexeev, N. V.

2017-04-01

The possibility of plasmochemical synthesis of titanium nitride is demonstrated in the paper. Results of the thermodynamic analysis of TiCl4 - H2 - N2 system are presented; key parameters of TiN synthesis process are calculated. The influence of parameters of plasma-chemical titanium nitride synthesis process in the reactor with an arc plasmatron on characteristics on the produced powders is experimentally investigated. Structure, chemical composition and morphology dependencies on plasma jet enthalpy, stoichiometric excess of hydrogen and nitrogen in a plasma jet are determined.

Synthesis of c-axis oriented AlN thin films on different substrates: A review

International Nuclear Information System (INIS)

Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

2010-01-01

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

Extending the 3ω method: thermal conductivity characterization of thin films.

Science.gov (United States)

Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

2013-08-01

A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

International Nuclear Information System (INIS)

Jiang, Nanke; Georgiev, Daniel G.; Wen, Ting; Jayatissa, Ahalapitiya H.

2012-01-01

Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N 2 –Ar or N 2 –Ar–O 2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn-N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of ∼ 10 19 cm −3 , mobility of ∼ 10 1 cm 2 /Vs, resistivity of ∼ 10 −2 Ω ∗ cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap.

Nanostructured thin films and coatings mechanical properties

CERN Document Server

2010-01-01

The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

Energy Technology Data Exchange (ETDEWEB)

Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

2009-05-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Physical and dispersive optical characteristics of ZrON/Si thin-film system

Energy Technology Data Exchange (ETDEWEB)

Wong, Yew Hoong [University of Malaya, Centre of Advanced Materials, Department of Mechanical Engineering, Faculty of Engineering, Kuala Lumpur (Malaysia); University of Malaya, Centre of Advanced Manufacturing and Material Processing, Kuala Lumpur (Malaysia); Atuchin, V.V. [Institute of Semiconductor Physics, SB RAS, Laboratory of Optical Materials and Structures, Novosibirsk (Russian Federation); Kruchinin, V.N. [Institute of Semiconductor Physics, SB RAS, Laboratory for Ellipsometry of Semiconductor Materials and Structures, Novosibirsk (Russian Federation); Cheong, Kuan Yew [Universiti Sains Malaysia, Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Seberang Perai Selatan, Penang (Malaysia)

2014-06-15

To date, the complex evaluation of physical and dispersive optical characteristics of the ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si(100) substrates through oxidation/nitridation of sputtered metallic Zr in N{sub 2}O environment at 500, 700, and 900 C. Physical properties of the deposited films have been characterized by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, reflection high-energy electron diffraction (RHEED), and spectroscopic ellipsometry (SE). It has been shown that ZrON/Si thin films without optical absorption can be prepared by oxidation/nitridation reaction in N{sub 2}O environment at 700-900 C. (orig.)

Correlation of Critical Temperatures and Electrical Properties in Titanium Films

Science.gov (United States)

Gandini, C.; Lacquaniti, V.; Monticone, E.; Portesi, C.; Rajteri, M.; Rastello, M. L.; Pasca, E.; Ventura, G.

Recently transition-edge sensors (TES) have obtained an increasing interest as light detectors due to their high energy resolution and broadband response. Titanium (Ti), with transition temperature up to 0.5 K, is among the suitable materials for TES application. In this work we investigate Ti films obtained from two materials of different purity deposited by e-gun on silicon nitride. Films with different thickness and deposition substrate temperature have been measured. Critical temperatures, electrical resistivities and structural properties obtained from x-ray are related to each other.

Review about laser nitriding of titanium alloys; Revision sobre nitruraciones laser de aleaciones de titanio

Energy Technology Data Exchange (ETDEWEB)

Perez-Artieda, M.G.; Fernandez-Carrasquilla, J.

2010-07-01

A common technique used to improve the wear response of titanium alloys is to nitride the surface, using chemical or physical vapour deposition, ion implantation or surface remelting in a nitrogen atmosphere. In this revision nitriding systems with laser technology are studied, used in titanium alloys surface treatments.For high temperature, high strength applications, titanium based alloys are an attractive light-weight alternative to steel, due to their high strength to weight ratio and corrosion resistance. In applications that require good wear resistance, titanium alloys pose a problem due to their poor tribological characteristics.Titanium alloys used with a suitable nitriding treatment could allow the replacement of steel in different applications, obtaining weight savings in fabricated components. (Author). 68 refs.

Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

Energy Technology Data Exchange (ETDEWEB)

Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

2012-06-01

Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon

International Nuclear Information System (INIS)

Veronesi, Francesca; Giavaresi, Gianluca; Fini, Milena; Longo, Giovanni; Ioannidu, Caterina Alexandra; Scotto d'Abusco, Anna; Superti, Fabiana; Panzini, Gianluca; Misiano, Carlo; Palattella, Alberto; Selleri, Paolo; Di Girolamo, Nicola; Garbarino, Viola; Politi, Laura; Scandurra, Roberto

2017-01-01

Titanium implants coated with a 500 nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8 weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p < 0.005) and Bone Formation Rate (BFR, μm 2 /μm/day) (p < 0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p < 0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. - Highlights: • Ti implants were coated with a nanostructured film composed of C gr , TiC and TiO x . • The TiC layer stimulates adhesion, proliferation and activity of osteoblasts. • Uncoated and TiC coated titanium implants were implanted in rabbit femurs. • Bone-implant contacts of TiC coated implants were higher than that of uncoated. • Mineral Apposition Rate of TiC coated implants were higher than that of uncoated.

Core-shell titanium dioxide-titanium nitride nanotube arrays with near-infrared plasmon resonances

Science.gov (United States)

Farsinezhad, Samira; Shanavas, Thariq; Mahdi, Najia; Askar, Abdelrahman M.; Kar, Piyush; Sharma, Himani; Shankar, Karthik

2018-04-01

Titanium nitride (TiN) is a ceramic with high electrical conductivity which in nanoparticle form, exhibits localized surface plasmon resonances (LSPRs) in the visible region of the solar spectrum. The ceramic nature of TiN coupled with its dielectric loss factor being comparable to that of gold, render it attractive for CMOS polarizers, refractory plasmonics, surface-enhanced Raman scattering and a whole host of sensing applications. We report core-shell TiO2-TiN nanotube arrays exhibiting LSPR peaks in the range 775-830 nm achieved by a simple, solution-based, low cost, large area-compatible fabrication route that does not involve laser-writing or lithography. Self-organized, highly ordered TiO2 nanotube arrays were grown by electrochemical anodization of Ti thin films on fluorine-doped tin oxide-coated glass substrates and then conformally coated with a thin layer of TiN using atomic layer deposition. The effects of varying the TiN layer thickness and thermal annealing on the LSPR profiles were also investigated. Modeling the TiO2-TiN core-shell nanotube structure using two different approaches, one employing effective medium approximations coupled with Fresnel coefficients, resulted in calculated optical spectra that closely matched the experimentally measured spectra. Modeling provided the insight that the observed near-infrared resonance was not collective in nature, and was mainly attributable to the longitudinal resonance of annular nanotube-like TiN particles redshifted due to the presence of the higher permittivity TiO2 matrix. The resulting TiO2-TiN core-shell nanotube structures also function as visible light responsive photocatalysts, as evidenced by their photoelectrochemical water-splitting performance under light emitting diode illumination using 400, 430 and 500 nm photons.

Effect of Diethanolamine on Property of Thin Film TiO2 in Treating Hexavalent Chromium from Aqueous Solution

International Nuclear Information System (INIS)

Kajitvichyanukul, Puangrat; Jirapattarasakul, Sudarat

2006-01-01

In this research titanium dioxide thin film was synthesized from hydrolysis and condensation process by sol-gel method. Titanium alkoxide was used as initial substrate. The solvent was ethanal and the additive substance was diethanolamine. All substances are mixed altogether in different ratios. To study the effect of diethanolamine on properties of titanium dioxide thin film, various film analysis were performed which included mass weighing, adhesive test, corrosion test using acid and alkali, surface morphology analysis with scanning electron microscope (SEM), thin film structure analysis using X-ray diffraction (XRD), and photo activity by chromium removal test. It was found that diethanolmine enhanced the film strength and improved the adhesive property. The smooth surface was obtained. This thin film showed the effectiveness in chromium removal with high photo activity. Even tough the developed thin film can remove chromium (VI) efficiently, the reaction rate constant (k) was slightly reduced from that using the normal thin film titanium dioxide (without adding diethanolamine). In addition, the reaction time is required little longer to accomplish the chromium (VI) removal with the same performance

Nanoscratch characterization of indium nitride films

Energy Technology Data Exchange (ETDEWEB)

Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

2014-01-15

In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

Synthesis and Characterization of Titanium Dioxide Thin Film for Sensor Applications

Science.gov (United States)

Latha, H. K. E.; Lalithamba, H. S.

2018-03-01

Titanium oxide (TiO2) nanoparticles (metal oxide semiconductor) are successfully synthesized using hydrothermal method for sensor application. Titanium dioxide and Sodium hydroxide are used as precursors. These reactants are mixed and calcinated at 400 °C to produce TiO2 nanoparticles. The crystalline structure, morphology of synthesized TiO2 nanoparticles are studied using x-ray diffraction (XRD), Fourier Transform Infrared (FTIR) analysis and scanning electron microscopy (SEM). XRD results revealed that the prepared TiO2 sample is highly crystalline, having Anatase crystal structure. FT-IR spectra peak at 475 cm‑1 indicated characteristic absorption bands of TiO2 nanoparticles. The XRD and FTIR result confirmed the formation of high purity of TiO2 nanoparticles. The SEM image shows that TiO2 nanoparticles prepared in this study are spherical in shape. Synthesized TiO2 nanoparticles are deposited on glass substrate at room temperature using E beam evaporation method to determine gauge factor and found to be 4.7. The deposited TiO2 thin films offer tremendous potential in the applications of electronic and magneto–electric devices.

A new method for production of titanium vapor and synthesis of titanium nitride coatings

Science.gov (United States)

Grigoriev, Sergey N.; Melnik, Yury A.; Metel, Alexander S.; Volosova, Marina A.

2018-03-01

It is proposed to synthesize on machine parts and cutting tools wear-resistant titanium nitride coatings with the help of the hollow-cathode glow discharge, a molybdenum crucible for titanium evaporation being used as the anode of the discharge and a process vacuum chamber being used as the hollow cathode. The research revealed that at the anode surface area less than a critical value S* = (2m/M)1/2S, where S is the area of the chamber walls, m is the mass of electrons and M is the mass of ions, the anode fall of potential is positive and grows from ˜50 V at argon pressure p = 0.2 Pa to ˜2 kV at p = 0.02 Pa. At the discharge current I = 0.6 A electrons accelerated by the anode fall of 0.9 kV transport into the crucible with the inner diameter of 12 mm the power of ˜0.54 kW, which allows the titanium evaporation and the coating deposition rate of 5 µm·h-1 on a substrate distanced from the crucible at 100 mm. After the argon is replaced with the nitrogen, titanium nitride coating without titanium droplets is synthesized the deposition rate amounting to about the same value.

The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

Science.gov (United States)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Fluxons in thin-film superconductor-insulator superlattices

DEFF Research Database (Denmark)

Sakai, S.; Bodin, P.; Pedersen, Niels Falsig

1993-01-01

In a system of thin alternating layers of superconductors and insulators the equations describing static and dynamic fluxon solutions are derived. The approach, represented by a useful compact matrix form, is intended to describe systems fabricated for example of niobium or niobium-nitride thin...... films; in the limit of ultrathin superconductor films it may give a model for describing fluxon motion in layered high-Tc superconductors. Numerical examples of current versus voltage curves to be expected in such an experiment are presented. Journal of Applied Physics is copyrighted by The American...

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

Covalently bonded disordered thin-film materials. Materials Research Society symposium proceedings Volume 498

International Nuclear Information System (INIS)

Siegal, M.P.; Milne, W.I.; Jaskie, J.E.

1998-01-01

The current and potential impact of covalently bonded disordered thin films is enormous. These materials are amorphous-to-nanocrystalline structures made from light atomic weight elements from the first row of the periodic table. Examples include amorphous tetrahedral diamond-like carbon, boron nitride, carbon nitride, boron carbide, and boron-carbon-nitride. These materials are under development for use as novel low-power, high-visibility elements in flat-panel display technologies, cold-cathode sources for microsensors and vacuum microelectronics, encapsulants for both environmental protection and microelectronics, optical coatings for laser windows, and ultra-hard tribological coatings. researchers from 17 countries and a broad range of academic institutions, national laboratories and industrial organizations come together in this volume to report on the status of key areas and recent discoveries. More specifically, the volume is organized into five sections. The first four highlight ongoing work primarily in the area of amorphous/nanocrystalline (disordered) carbon thin films; theoretical and experimental structural characterization; electrical and optical characterizations; growth methods; and cold-cathode electron emission results. The fifth section describes the growth, characterization and application of boron- and carbon-nitride thin films

Effect of zirconium nitride physical vapor deposition coating on preosteoblast cell adhesion and proliferation onto titanium screws.

Science.gov (United States)

Rizzi, Manuela; Gatti, Giorgio; Migliario, Mario; Marchese, Leonardo; Rocchetti, Vincenzo; Renò, Filippo

2014-11-01

Titanium has long been used to produce dental implants. Problems related to its manufacturing, casting, welding, and ceramic application for dental prostheses still limit its use, which highlights the need for technologic improvements. The aim of this in vitro study was to evaluate the biologic performance of titanium dental implants coated with zirconium nitride in a murine preosteoblast cellular model. The purpose of this study was to evaluate the chemical and morphologic characteristics of titanium implants coated with zirconium nitride by means of physical vapor deposition. Chemical and morphologic characterizations were performed by scanning electron microscopy and energy dispersive x-ray spectroscopy, and the bioactivity of the implants was evaluated by cell-counting experiments. Scanning electron microscopy and energy dispersive x-ray spectroscopy analysis found that physical vapor deposition was effective in covering titanium surfaces with zirconium nitride. Murine MC-3T3 preosteoblasts were seeded onto titanium-coated and zirconium nitride-coated screws to evaluate their adhesion and proliferation. These experiments found a significantly higher number of cells adhering and spreading onto zirconium nitride-coated surfaces (Pzirconium nitride surfaces were completely covered with MC-3T3 cells. Analysis of these data indicates that the proposed zirconium nitride coating of titanium implants could make the surface of the titanium more bioactive than uncoated titanium surfaces. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Surface scattering mechanisms of tantalum nitride thin film resistor.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2014-01-01

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Study of electrochemical properties of thin film materials obtained using plasma technologies for production of electrodes for pacemakers

International Nuclear Information System (INIS)

Obrezkov, O I; Vinogradov, V P; Krauz, V I; Mozgrin, D V; Guseva, I A; Andreev, E S; Zverev, A A; Starostin, A L

2016-01-01

Studies of thin film materials (TFM) as coatings of tips of pacemaker electrodes implanted into the human heart have been performed. TFM coatings were deposited in vacuum by arc magnetron discharge plasma, by pulsed discharge of “Plasma Focus”, and by electron beam evaporation. Simulation of electric charge transfer to the heart in physiological blood- imitator solution and determination of electrochemical properties of the coatings were carried out. TFM of highly developed surface of contact with tissue was produced by argon plasma spraying of titanium powder with subsequent coating by titanium nitride in vacuum arc assisted by Ti ion implantation. The TFM coatings of pacemaker electrode have passed necessary clinical tests and were used in medical practice. They provide low voltage myocardium stimulation thresholds within the required operating time. (paper)

Surface Modification of C17200 Copper-Beryllium Alloy by Plasma Nitriding of Cu-Ti Gradient Film

Science.gov (United States)

Zhu, Y. D.; Yan, M. F.; Zhang, Y. X.; Zhang, C. S.

2018-03-01

In the present work, a copper-titanium film of gradient composition was firstly fabricated by the dual magnetron sputtering through power control and plasma nitriding of the film was then conducted to modify C17200 Cu alloy. The results showed that the prepared gradient Cu-Ti film by magnetron sputtering was amorphous. After plasma nitriding at 650 °C, crystalline Cu-Ti intermetallics appeared in the multi-phase coating, including CuTi2, Cu3Ti, Cu3Ti2 and CuTi. Moreover, even though the plasma nitriding duration of the gradient Cu-Ti film was only 0.5 h, the mechanical properties of the modified Cu surface were obviously improved, with the surface hardness enhanced to be 417 HV0.01, the wear rate to be 0.32 × 10-14 m3/Nm and the friction coefficient to be 0.075 at the load of 10 N, which are all more excellent than the C17200 Cu alloy. In addition, the wear mechanism also changed from adhesion wear for C17200 Cu substrate to abrasive wear for the modified surface.

Deposit of thin films of TiN, a-C, Ti/TiN/a-C by laser ablation

International Nuclear Information System (INIS)

Mejia, I.S.; Escobar A, L.; Camps, E.; Romero, S.; Muhl, S.

2006-01-01

Thin films of titanium nitride (TiN), amorphous carbon (a-C), as well as bilayers of Ti/TiN/a-C were deposited by means of the laser ablation technique. It was investigated the effect that it has the laser fluence used to ablation the targets in the structure and mechanical properties of the TiN deposited films. The TiN obtained films have a preferential orientation in the direction (200). The results show that the hardness of this material is influenced by the laser fluence. It is observed that the hardness is increased in an approximately lineal way with the increment of the fluence up to 19 J/cm 2 . The films of amorphous carbon present hardness of the order of 11.2 GPa. Likewise it was found that the multilayers of Ti/TiN/aC presented a bigger hardness that of its individual components. (Author)

TiO2 and Cu/TiO2 Thin Films Prepared by SPT

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-12-01

Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

Science.gov (United States)

Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

2017-06-26

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.

Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Tien, Chuen-Lin; Lin, Tsai-Wei

2012-10-20

We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN(x) film deposited on Si wafers to be more compressive, but the residual stress in SiN(x) film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27×10(-6)°C(-1). The biaxial modulus is 1125 GPa for SiN(x) film.

Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

Energy Technology Data Exchange (ETDEWEB)

Rebollo P, B

2001-07-01

The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Energy Technology Data Exchange (ETDEWEB)

Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

Science.gov (United States)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

TEM investigation of DC sputtered carbon-nitride-nickel thin films

International Nuclear Information System (INIS)

Safran, G.; Geszti, O.; Radnoczi, G.

2002-01-01

Deposition of carbon nitride (C-N) and carbon-nitride-nickel (C-N-Ni) films onto glass, NaCl and Si(001) substrates was carried out in a dc magnetron sputtering system. Carbon was deposited from high-purity (99.99%) pyrolytic graphite target, 50 mm in diameter, positioned at 10 cm from a resistance-heated substrate holder. C-N-Ni films were grown by a small Ni plate mounted on the graphite target. The base pressure of the deposition chamber was ∼7x10 -7 Torr. Films were grown at a substrate temperature of 20-700 grad C, in pure N 2 at partial pressures of 1.9 -2.2 mTorr and the substrates were held at ground potential. The typical film thickness of 15-30 nm was deposited on all the substrates at a magnetron current of 0.2 and 0.3 A, which resulted in a deposition rate of 1.5-2 nm/s. Structural characterizations were performed by high-resolution transmission electron microscopy (HRTEM) using a JEOL 3010 operated at 300 kV and a 200 kV Philips CM 20 electron microscope equipped with a Ge detector Noran EDS system. The N content of the C-N samples prepared at room temperature was 22-24% by EDS measurement and showed a decrease to 6-7% at elevated temperatures up to 700 grad C. The N concentration in the C-N-Ni films was higher: ∼38% at RT and ∼9% at 700 grad C. The Ni concentration of C-N-Ni samples was 5-6% and 0.3-0.4% in samples deposited at RT and 700 grad C respectively. The low Ni content in the latter is attributed to a decrease of the sticking coefficient of the carbon co-deposited Ni at elevated temperatures. (Authors)

Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

Energy Technology Data Exchange (ETDEWEB)

Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

2015-12-30

Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

International Nuclear Information System (INIS)

Karuppasamy, A.

2015-01-01

Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

Minerals deposited as thin films

International Nuclear Information System (INIS)

Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

1987-01-01

Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

2017-01-15

Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

Effect of nitriding surface treatment on the corrosion resistance of dental nickel-titanium files in 5.25% sodium hypochlorite solution

Energy Technology Data Exchange (ETDEWEB)

Liu, J.-F. [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Department of Dentistry, Taichung Veterans General Hospital, Taichung, Taiwan (China); Lin, M.-C. [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Department of Dental Laboratory Technology, Central Taiwan University of Science and Technology, Taichung, Taiwan (China); Hsu, M.-L. [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Li, U.-M. [Dental Department, Cardinal Tien Hospital, Hsintien, Taiwan (China); Lin, C.-P. [Department of Dentistry, National Taiwan University, Taipei, Taiwan (China); Tsai, W.-F.; Ai, C.-F. [Institute of Nuclear Energy Research, Atomic Energy Council, Taoyuan, Taiwan (China); Chen, L.-K. [Department of Dentistry, Taipei City Hospital, Taipei, Taiwan (China); Huang, H.-H. [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Department of Dentistry, Taipei City Hospital, Taipei, Taiwan (China); Institute of Oral Biology, National Yang-Ming University, Taipei, Taiwan (China)], E-mail: hhhuang@ym.edu.tw

2009-05-05

This study investigated the effect of nitriding surface treatment on the corrosion resistance of commercial dental alloy, in the form of helical nickel-titanium (Ni-Ti) files, when treated with 5.25% sodium hypochlorite (NaOCl) solution. The surface of dental helical Ni-Ti files was modified using nitriding treatment at 200 deg. C, 250 deg. C and 300 deg. C in an NH{sub 3}-containing environment. The surface morphology and chemical composition of the Ni-Ti files were analyzed using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. The corrosion resistance of the Ni-Ti files when treated with a clinical solution of 5.25% NaOCl was evaluated using the linear polarization method and by potentiodynamic polarization curve measurement. The nitriding treatments at different temperatures created titanium nitride (TiN) on the surface of the helical Ni-Ti files. The Ni-Ti files nitrided at 200 deg. C and 250 deg. C showed higher polarization resistance and higher passive film breakdown potential together with a lower passive current than untreated files. The presence of TiN on dental Ni-Ti files significantly increased the corrosion resistance of the files in the presence of 5.25% NaOCl solution.

Effect of nitriding surface treatment on the corrosion resistance of dental nickel-titanium files in 5.25% sodium hypochlorite solution

International Nuclear Information System (INIS)

Liu, J.-F.; Lin, M.-C.; Hsu, M.-L.; Li, U.-M.; Lin, C.-P.; Tsai, W.-F.; Ai, C.-F.; Chen, L.-K.; Huang, H.-H.

2009-01-01

This study investigated the effect of nitriding surface treatment on the corrosion resistance of commercial dental alloy, in the form of helical nickel-titanium (Ni-Ti) files, when treated with 5.25% sodium hypochlorite (NaOCl) solution. The surface of dental helical Ni-Ti files was modified using nitriding treatment at 200 deg. C, 250 deg. C and 300 deg. C in an NH 3 -containing environment. The surface morphology and chemical composition of the Ni-Ti files were analyzed using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. The corrosion resistance of the Ni-Ti files when treated with a clinical solution of 5.25% NaOCl was evaluated using the linear polarization method and by potentiodynamic polarization curve measurement. The nitriding treatments at different temperatures created titanium nitride (TiN) on the surface of the helical Ni-Ti files. The Ni-Ti files nitrided at 200 deg. C and 250 deg. C showed higher polarization resistance and higher passive film breakdown potential together with a lower passive current than untreated files. The presence of TiN on dental Ni-Ti files significantly increased the corrosion resistance of the files in the presence of 5.25% NaOCl solution.

Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

Energy Technology Data Exchange (ETDEWEB)

Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

2000-07-01

It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

Tribological Characteristic of Titanium Alloy Surface Layers Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Lisiecki A.

2016-06-01

Full Text Available In order to improve the tribological properties of titanium alloy Ti6Al4V composite surface layers Ti/TiN were produced during laser surface gas nitriding by means of a novel high power direct diode laser with unique characteristics of the laser beam and a rectangular beam spot. Microstructure, surface topography and microhardness distribution across the surface layers were analyzed. Ball-on-disk tests were performed to evaluate and compare the wear and friction characteristics of surface layers nitrided at different process parameters, base metal of titanium alloy Ti6Al4V and also the commercially pure titanium. Results showed that under dry sliding condition the commercially pure titanium samples have the highest coefficient of friction about 0.45, compared to 0.36 of titanium alloy Ti6Al4V and 0.1-0.13 in a case of the laser gas nitrided surface layers. The volume loss of Ti6Al4V samples under such conditions is twice lower than in a case of pure titanium. On the other hand the composite surface layer characterized by the highest wear resistance showed almost 21 times lower volume loss during the ball-on-disk test, compared to Ti6Al4V samples.

Solid Surfaces, Interfaces and Thin Films

CERN Document Server

Lüth, Hans

2010-01-01

This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

International Nuclear Information System (INIS)

Bueno, J.; Baselmans, J. J. A; Coumou, P. C. J. J.; Zheng, G.; Visser, P. J. de; Klapwijk, T. M.; Driessen, E. F. C.; Doyle, S.

2014-01-01

We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

Energy Technology Data Exchange (ETDEWEB)

Bueno, J., E-mail: j.bueno@sron.nl; Baselmans, J. J. A [SRON, Netherlands Institute of Space Research, Utrecht (Netherlands); Coumou, P. C. J. J.; Zheng, G. [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Visser, P. J. de [SRON, Netherlands Institute of Space Research, Utrecht (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Klapwijk, T. M. [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Physics Department, Moscow State Pedagogical University, 119991 Moscow (Russian Federation); Driessen, E. F. C. [Université Grenoble Alpes, INAC-SPSMS, F-38000 Grenoble (France); CEA, INAC-SPSMS, F-38000 Grenoble (France); Doyle, S. [Cardiff University, School of Physics and Astronomy, Queens Buildings, Cardiff CF24 3AA (United Kingdom)

2014-11-10

We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.

Deodorisation effect of diamond-like carbon/titanium dioxide multilayer thin films deposited onto polypropylene

Energy Technology Data Exchange (ETDEWEB)

Ozeki, K., E-mail: ozeki@mx.ibaraki.ac.jp [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Frontier Research Center for Applied Atomic Sciences, 162-1 Shirakata, Toukai, Ibaraki 319-1106 (Japan); Hirakuri, K.K. [Applied Systems Engineering, Graduate School of Science and Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hiki, Saitama 350-0394 (Japan); Masuzawa, T. [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan)

2011-04-15

Many types of plastic containers have been used for the storage of food. In the present study, diamond-like carbon (DLC)/titanium oxide (TiO{sub 2}) multilayer thin films were deposited on polypropylene (PP) to prevent flavour retention and to remove flavour in plastic containers. For the flavour removal test, two types of multilayer films were prepared, DLC/TiO{sub 2} films and DLC/TiO{sub 2}/DLC films. The residual gas concentration of acetaldehyde, ethylene, and turmeric compounds in bottle including the DLC/TiO{sub 2}-coated and the DLC/TiO{sub 2}/DLC-coated PP plates were measured after UV radiation, and the amount of adsorbed compounds to the plates was determined. The percentages of residual gas for acetaldehyde, ethylene, and turmeric with the DLC/TiO{sub 2} coated plates were 0.8%, 65.2% and 75.0% after 40 h of UV radiation, respectively. For the DLC/TiO{sub 2}/DLC film, the percentages of residual gas for acetaldehyde, ethylene and turmeric decreased to 34.9%, 76.0% and 85.3% after 40 h of UV radiation, respectively. The DLC/TiO{sub 2}/DLC film had a photocatalytic effect even though the TiO{sub 2} film was covered with the DLC film.

Deodorisation effect of diamond-like carbon/titanium dioxide multilayer thin films deposited onto polypropylene

International Nuclear Information System (INIS)

Ozeki, K.; Hirakuri, K.K.; Masuzawa, T.

2011-01-01

Many types of plastic containers have been used for the storage of food. In the present study, diamond-like carbon (DLC)/titanium oxide (TiO 2 ) multilayer thin films were deposited on polypropylene (PP) to prevent flavour retention and to remove flavour in plastic containers. For the flavour removal test, two types of multilayer films were prepared, DLC/TiO 2 films and DLC/TiO 2 /DLC films. The residual gas concentration of acetaldehyde, ethylene, and turmeric compounds in bottle including the DLC/TiO 2 -coated and the DLC/TiO 2 /DLC-coated PP plates were measured after UV radiation, and the amount of adsorbed compounds to the plates was determined. The percentages of residual gas for acetaldehyde, ethylene, and turmeric with the DLC/TiO 2 coated plates were 0.8%, 65.2% and 75.0% after 40 h of UV radiation, respectively. For the DLC/TiO 2 /DLC film, the percentages of residual gas for acetaldehyde, ethylene and turmeric decreased to 34.9%, 76.0% and 85.3% after 40 h of UV radiation, respectively. The DLC/TiO 2 /DLC film had a photocatalytic effect even though the TiO 2 film was covered with the DLC film.

Osseointegration is improved by coating titanium implants with a nanostructured thin film with titanium carbide and titanium oxides clustered around graphitic carbon

Energy Technology Data Exchange (ETDEWEB)

Veronesi, Francesca [Laboratory of Preclinical and Surgical Studies, Rizzoli Orthopedic Institute, Via Di Barbiano 1/10, Bologna 40136 (Italy); Giavaresi, Gianluca; Fini, Milena [Laboratory of Preclinical and Surgical Studies, Rizzoli Orthopedic Institute, Via Di Barbiano 1/10, Bologna 40136 (Italy); Laboratory of Biocompatibility, Innovative Technologies and Advanced Therapies, Department Rizzoli RIT, Via Di Barbiano 1/10, Bologna 40136 (Italy); Longo, Giovanni [CNR Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Ioannidu, Caterina Alexandra; Scotto d' Abusco, Anna [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy); Superti, Fabiana; Panzini, Gianluca [Dept. of Technologies and Health, Istituto Superiore di Sanità, Viale Regina Elena, 299 Roma (Italy); Misiano, Carlo [Romana Film Sottili, Anzio, Roma (Italy); Palattella, Alberto [Dept. of Clinical Sciences and Translational Medicine, Tor Vergata University, Via Montpellier 1, 00133 Roma (Italy); Selleri, Paolo; Di Girolamo, Nicola [Exotic Animals Clinic, Via S. Giovannini 53, 00137 Roma (Italy); Garbarino, Viola [Dept. of Radiology, S.M. Goretti Hospital, Via G. Reni 2, 04100 Latina (Italy); Politi, Laura [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy); Scandurra, Roberto, E-mail: roberto.scandurra@uniroma1.it [Dept. of Biochemical Sciences, Sapienza University of Roma, Ple A. Moro 5, 00185 Roma (Italy)

2017-01-01

Titanium implants coated with a 500 nm nanostructured layer, deposited by the Ion Plating Plasma Assisted (IPPA) technology, composed of 60% graphitic carbon, 25% titanium oxides and 15% titanium carbide were implanted into rabbit femurs whilst into the controlateral femurs uncoated titanium implants were inserted as control. At four time points the animals were injected with calcein green, xylenol orange, oxytetracycline and alizarin. After 2, 4 and 8 weeks femurs were removed and processed for histology and static and dynamic histomorphometry for undecalcified bone processing into methylmethacrylate, sectioned, thinned, polished and stained with Toluidine blue and Fast green. The overall bone-implant contacts rate (percentage of bone-implant contacts/weeks) of the TiC coated implant was 1.6 fold than that of the uncoated titanium implant. The histomorphometric analyses confirmed the histological evaluations. More precisely, higher Mineral Apposition Rate (MAR, μm/day) (p < 0.005) and Bone Formation Rate (BFR, μm{sup 2}/μm/day) (p < 0.0005) as well as Bone Implant Contact (Bic) and Bone Ingrowth values (p < 0.0005) were observed for the TiC coated implants compared to uncoated implants. In conclusion the hard nanostructured TiC layer protects the bulk titanium implant against the harsh conditions of biological tissues and in the same time, stimulating adhesion, proliferation and activity of osteoblasts, induces a better bone-implant contacts of the implant compared to the uncoated titanium implant. - Highlights: • Ti implants were coated with a nanostructured film composed of C{sub gr}, TiC and TiO{sub x}. • The TiC layer stimulates adhesion, proliferation and activity of osteoblasts. • Uncoated and TiC coated titanium implants were implanted in rabbit femurs. • Bone-implant contacts of TiC coated implants were higher than that of uncoated. • Mineral Apposition Rate of TiC coated implants were higher than that of uncoated.

Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge

Science.gov (United States)

Kavitha, A.; Kannan, R.; Gunasekhar, K. R.; Rajashabala, S.

2017-10-01

Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 μΩ cm to 1800 μΩ cm. Atomic force microscopy studies of the TiN thin films deposited with N2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.

Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

International Nuclear Information System (INIS)

Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

2010-01-01

Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

The strength limits of ultra-thin copper films

Energy Technology Data Exchange (ETDEWEB)

Wiederhirn, Guillaume

2007-07-02

Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

International Nuclear Information System (INIS)

Keim, E.G.; Aite, K.

1989-01-01

Thin silicon nitride films (100-210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar + sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results. (orig.)

Study of titanium nitride elasticity characteristics in the homogeneity range by ultrasonic resonance method

International Nuclear Information System (INIS)

Khidirov, I.; Khajdarov, T.

1995-01-01

Elasticity characteristics of cubic and tetragonal phases of titanium nitride in the homogeneity range were studied for the first time by ultrasonic resonance method. It is established that the Young modulus, the shift and volume module of cubic titanium nitride elasticity in the homogeneity range change nonlinearly with decrease in nitrogen concentration and correlate with concentration dependences of other physical properties.15 refs., 2 figs

Characteristics and optical properties of iron ion (Fe{sup 3+})-doped titanium oxide thin films prepared by a sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Wang, M.C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Lin, H.J. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)], E-mail: hjlin@nuu.edu.tw; Yang, T.S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2009-04-03

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations have been prepared on a glass substrate by the sol-gel spin coating process. Characteristics and optical properties of TiO{sub 2} thin films doping of various Fe content were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry. The crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0 to 25.0 wt%. During the Fe{sup 3+} addition to 25.0 wt%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The absorption edge of TiO{sub 2} thin films shifted towards longer wavelengths (i.e. red shifted) from 355 to 415 nm when the Fe{sup 3+}-doped concentration increased from 0 to 25.0 wt%. The values of the refractive index (n), and extinction coefficient (k), decreased with an increasing Fe{sup 3+} content. Moreover, the band-gap energy of TiO{sub 2} thin films also decreased from 3.29 to 2.83 eV with an increase in the Fe{sup 3+} content from 0 to 25.0 wt%.

Synthesis and characterization of thin films of Pd/TiO{sub 2} with possible applications in photo catalysis; Sintesis y caracterizacion de peliculas delgadas de Pd/TiO{sub 2} con posibles aplicaciones en fotocatalisis

Energy Technology Data Exchange (ETDEWEB)

Tirado G, S. [IPN, Escuela Superior de Fisica y Matematicas, U. P. Adolfo Lopez Mateos Edif. 9, San Pedro Zacatenco, 07738 Mexico D. F. (Mexico); Valenzuela Z, M. A., E-mail: tirado@esfm.ipn.mx [IPN, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Laboratorio de Catalisis y Materiales, U. P. Adolfo Lopez Mateos Edif. 8, San Pedro Zacatenco, 07738 Mexico D. F. (Mexico)

2015-10-15

In this paper the synthesis and study of thin films of titanium oxide is reported, as well as those that were surface modified with palladium nanoparticles Pd/TiO{sub 2}. First, the TiO{sub 2} films are grown on substrates of soda-lime glass using chemical sol-gel route and the repeated immersion procedure. The salt precursor titanium oxy-acetylacetonate to 0.2 M, in the solvent 2-methoxyethanol and monoethanolamine was used as stabilizer. The number of used immersions gave an average thickness estimate for these films of 172.8 nm. Second, the series of Pd/TiO{sub 2} films surface modified were obtained from a solution of palladium nitrate dehydrate at low concentration, with the same procedure. The films grown TiO{sub 2} and those surface-modified films were characterized in its structure by X-ray diffraction, morphology by scanning electron microscopy, the topography with atomic force microscopy, optical properties by UV-Vis, among others. Photoluminescence properties and/or possible applications in photo catalysis are reported in this paper. (Author)

Study of thin insulating films using secondary ion emission

International Nuclear Information System (INIS)

Hilleret, Noel

1973-01-01

Secondary ion emission from insulating films was investigated using a CASTAING-SLODZIAN ion analyzer. Various different aspects of the problem were studied: charge flow across a silica film; the mobilization of sodium during ion bombardment; consequences of the introduction of oxygen on the emission of secondary ions from some solids; determination of the various characteristics of secondary ion emission from silica, silicon nitride and silicon. An example of measurements made using this type of operation is presented: profiles (concentration as a function of depth) of boron introduced by diffusion or implantation in thin films of silica on silicon or silicon nitride. Such measurements have applications in microelectronics. The same method of operation was extended to other types of insulating film, and in particular, to the metallurgical study of passivation films formed on the surface of stainless steels. (author) [fr

Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

International Nuclear Information System (INIS)

Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

1994-01-01

Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

Directory of Open Access Journals (Sweden)

Wilson Garcia

1999-12-01

Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

Low-loss and tunable near-zero-epsilon titanium nitride

Science.gov (United States)

Popović, M.; Novaković, M.; Schmidt, E.; Schöppe, P.; Bibić, N.; Ronning, C.; Rakočević, Z.

2017-10-01

Titanium nitride (TiN) has emerged as alternative plasmonic material in the visible and near-infrared spectral range due to its metallic properties. We studied the influence of silver ion implantation (fluence range from 0.5 × 1016-6 × 1016 ions/cm2) on the structural and optical properties of reactively sputtered 260 nm thick TiN films. The columnar structure was partially destroyed by the irradiation and up to 5 at.% of Ag was incorporated into the films within the projected ion range. The formation of cubic Ag nanoparticles with size of 1-2 nm was observed by high resolution transmission electron microscopy and subsequent fast Fourier transform analysis. This presence of Ag within the TiN matrix drastically changes both the real and imaginary component of the dielectric function and provides low optical losses. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the silver influence on the optical behavior of TiN. With increasing ion fluence, the unscreened plasma frequency decreased and broadening increased. The energy, strength and broadening of the interband transitions were studied with respect to the silver ion fluence and correlated with the microstructural changes induced in TiN films.

Cellular growth and dislocation structures in laser-nitrided titanium

NARCIS (Netherlands)

Kloosterman, A.B.; Hosson, J.Th.M. De

1997-01-01

Transmission electron microscopic observations were made of different dislocation structures in laser-nitrided titanium. Equidistant edge dislocations in the bulk and periodic surface structures exhibit a periodicity within the same order of magnitude. An analysis is presented in which both periodic

Modification of the surfaces of stainless steel during titanium nitride deposition by a dynamic mixing method

Science.gov (United States)

Yokota, Katsuhiro; Tamura, Susumu; Nakamura, Kazuhiro; Horiguchi, Motohiro; Nakaiwa, Hiroki; Sugimoto, Takashi; Akamatsu, Katsuya; Nakao, Kazuyoshi

2000-05-01

Surfaces of stainless steel SUS304 were coated with titanium nitride (TiN) at temperatures ranging from 400°C to 770°C using a dynamic mixing technique. The N+ ions were accelerated at energies of 0.5-2.0 keV, and were implanted into the stainless steel. The composition of the prepared TiN films was measured using Rutherford backscattering spectrometry with He ions at an energy of 2.0 MeV. Intermediate layers containing compounds such as FesNq, Cr2N, and CrFe were formed between the TiN films and substrates at substrate temperatures higher than 700°C. The thickness of the TiN films decreased significantly when the intermediate layers were formed.

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Energy Technology Data Exchange (ETDEWEB)

Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

2015-04-30

Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study

Energy Technology Data Exchange (ETDEWEB)

Ghamouss, F. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France); Tessier, P.-Y. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Djouadi, A. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Besland, M.-P. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Boujtita, M. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France)]. E-mail: mohammed.boujtita@univ-nantes.fr

2007-04-20

The surface of a screen-printed carbon electrode (SPCE) was modified by using amorphous carbon nitride (a-CN {sub x}) thin film deposited by reactive magnetron sputtering. Scanning electron microscopy and photoelectron spectroscopy measurements were used to characterise respectively the morphology and the chemical structure of the a-CN {sub x} modified electrodes. The incorporation of nitrogen in the amorphous carbon network was demonstrated by X ray photoelectron spectroscopy. The a-CN {sub x} layers were deposited on both carbon screen-printed electrode (SPCE) and silicon (Si) substrates. A comparative study showed that the nature of substrate, i.e. SPCE and Si, has a significant effect on both the surface morphology of deposited a-CN {sub x} film and their electrochemical properties. The improvement of the electrochemical reactivity of SPCE after a-CN {sub x} film deposition was highlighted both by comparing the shapes of voltammograms and calculating the apparent heterogeneous electron transfer rate constant.

Titanium oxynitride thin films as high-capacity and high-rate anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Hsia, Chen-Hsien

2015-01-01

Titanium oxynitride (TiO_xN_y) was synthesized by reactive magnetron sputtering in a mixed N_2/O_2/Ar gas at ambient temperature. TiO_xN_y thin films with various amounts of nitrogen contents were deposited by varying the N_2/O_2 ratios in the background gas. The synthesized TiO_xN_y films with different compositions (TiO_1_._8_3_7N_0_._0_6_0_, TiO_1_._8_9_0N_0_._0_6_8_, TiO_1_._8_6_5N_0_._0_7_3, and TiO_1_._8_8_2N_0_._1_6_3) all displayed anatase phase, except TiO_1_._8_8_2N_0_._1_6_3. The impedances and grain sizes showed obvious variations with the nitrogen contents. A wide potential window from 3.0 V to 0.05 V, high-rate charge–discharge testing, and long cycle testing were applied to investigate the performances of synthesized TiO_xN_y and pure TiO_2 as anodes for lithium-ion batteries. These TiO_xN_y anodes can be cycled under high rates of 125 μA/cm"2 (10 °C) because of the lower charge–transfer resistance compared with the TiO_2 anode. At 10 °C the discharge capacity of the optimal TiO_xN_y composition is 1.5 times higher than that of pure TiO_2. An unexpectedly large reversible capacity of ~ 300 μAh/cm"2 μm (~ 800 mAh/g) between 1.0 V and 0.05 V was recorded for the TiO_xN_y anodes. The TiO_xN_y anode was cycled (3.0 V to 0.05 V) at 10 °C over 300 times without capacity fading while delivering a capacity of ~ 150 μAh/cm"2 μm (~ 400 mAh/g). - Highlights: • Titanium oxynitride (TiO_xN_y) thin films as anode materials were studied. • TiO_xN_y thin films with various amounts of nitrogen contents were studied_. • High rate capability of TiO_xN_y was studied.

Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

International Nuclear Information System (INIS)

Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

2013-01-01

Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

Progress on sputter-deposited thermotractive titanium-nickel films

International Nuclear Information System (INIS)

Grummon, D.S.; Hou Li; Zhao, Z.; Pence, T.J.

1995-01-01

It is now well established that titanium-nickel alloys fabricated as thin films by physical vapor deposition can display the same transformation and shape-memory effects as their ingot-metallurgy counterparts. As such they may find important application to microelectromechanical and biomechanical systems. Furthermore, we show here that titanium-nickel films may be directly processed so as to possess extremely fine austenite grain size and very high strength. These films display classical transformational superelasticity, including high elastic energy storage capacity, the expected dependence of martensite-start temperature on transformation enthalpy, and large, fully recoverable anelastic strains at temperatures above A f . Processing depends on elevated substrate temperatures during deposition, which may be manipulated within a certain range to control both grain size and crystallographic texture. It is also possible to deposit crystalline titanium-nickel films onto polymeric substrates, making them amenable to lithographic patterning into actuator elements that are well-suited to electrical excitation of the martensite reversion transformation. Finally, isothermal annealing of nickel-rich films, under conditions of controlled extrinsic residual stress, leads to topotaxial orientation of Ni 4 Ti 3 -type precipitates, and the associated possibility of two-way memory effects. Much work remains to be done, especially with respect to precise control of composition. (orig.)

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

International Nuclear Information System (INIS)

Alam, M. T.; Haque, M. A.; Bresnehan, M. S.; Robinson, J. A.

2014-01-01

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m −1 K −1 , is lower than the bulk basal plane value (390 W m −1 K −1 ) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

Science.gov (United States)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

2015-09-30

Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

Tribological Properties of Surface-Textured and Plasma-Nitrided Pure Titanium Under Oil Lubrication Condition

Science.gov (United States)

Zhang, Baosen; Dong, Qiangsheng; Ba, Zhixin; Wang, Zhangzhong; Shi, Hancheng; Xue, Yanting

2018-01-01

Plasma nitriding was conducted as post-treatment for surface texture on pure titanium to obtain a continuous nitriding layer. Supersonic fine particles bombarding (SFPB) was carried out to prepare surface texture. The surface morphologies and chemical composition were analyzed using scanning electron microscope and energy disperse spectroscopy. The microstructures of modified layers were characterized by transmission electron microscope. The tribological properties of surface-textured and duplex-treated pure titanium under oil lubrication condition were systematically investigated in the ball-on-plate reciprocating mode. The effects of applied load and sliding velocity on the tribological behavior were analyzed. The results show that after duplex treatments, the grains size in modified layer becomes slightly larger, and hardness is obviously improved. Wear resistance of duplex-treated pure titanium is significantly improved referenced to untreated and surface-textured pure titanium, which is 3.22 times as much as untreated pure titanium and 2.15 times of that for surface-textured pure titanium, respectively.

Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

International Nuclear Information System (INIS)

Wong, Yew Hoong; Cheong, Kuan Yew

2012-01-01

A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N 2 O ambient (10–100%) at 500 °C for 15 min to form Zr-oxynitride on 4H–SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N 2 O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr–O–N and/or Zr–N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: ► Zr-oxynitride as the gate oxide deposited on 4H–SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H–SiC using various concentrations of N 2 O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr–O, Zr–N, Zr–O–N, Si–N, and/or C–N. ► The highest electrical breakdown and highest reliability at diluted N 2 O of 10%.

Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

DEFF Research Database (Denmark)

2000-01-01

Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

Synthesis of organometallic hydroxides of titanium, vanadium, cobalt and chromium as precursors of thin films type MaOb

International Nuclear Information System (INIS)

Montero Villalobos, Mavis

2001-01-01

This study shows the results obtained from a general objective that was the synthesis and characterization of precursors of thin films of metallic oxides, two different routes of synthesis have been practiced: route molecular precursors and route Sol-Gel technic. In the first route one of the objectives of the investigation is to obtain a molecular precursor of material type M a O b a route of synthesis have been tried proved that involves anhydrous chlorides of the transition metals and linked R that are alcoxides of metal such as silicon, titanium and zirconium. In the second route the general objective to create thin films of metallic oxide has been maintained but the way to resolve the problem has changed, not giving so much emphasis to the molecular precursors as it was originally presented (this due mainly to its instability and difficulty of synthesis), but being supported in the sun-gel chemistry. It was started a new synthesis line through the sun-gel chemistry that is more versatile and simplifies the process in the film formation [es

Photo-catalytic studies of transition metal doped titanium dioxide thin films processed by metalorganic decomposition (MOD) method

Science.gov (United States)

Talagala, P.; Marko, X.; Padmanabhan, K. R.; Naik, R.; Rodak, D.; Cheng, Y. T.

2006-03-01

We have synthesized pure and transition element (Fe, Co and V) doped Titanium oxide thin films of thickness ˜ 350 nm on sapphire, Si, and stainless steel substrates by Metalorganic Decomposition (MOD) method. The films were subsequently annealed at appropriate temperatures ( 500-750C) to obtain either anatase or the rutile phase of TiO2. Analysis of the composition of the films were performed by energy dispersive X-ray(EDAX) and Rutherford backscattering spectrometry(RBS). Ion channeling was used to identify possible epitaxial growth of the films on sapphire. Both XRD and Raman spectra of the films exhibit that the films annealed at 550C are of anatase phase, while those annealed at 700C seem to prefer a rutile structure. The water contact angle measurements of the films before and after photoactivation, demonstrate a significant reduction in the contact angle for the anatase phase. However, the variation in contact angle was observed for films exposed to UV (<10^o-30^o) and dark (25^o-50^o). Films doped with Fe show a trend towards lower contact angle than those doped with Co. Results with films doped with V will also be included.

Pulsed laser deposition of AlMgB₁₄ thin films

Energy Technology Data Exchange (ETDEWEB)

Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

2008-11-18

Hard, wear-resistant coatings of thin film borides based on AlMgB₁₄ have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB₁₄ used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB₁₄ has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB₁₄ films. Processing methods to eliminate large particles on the surface of the AlMgB₁₄ films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

TiCx thin films coatings prepared by reactive sputtering

International Nuclear Information System (INIS)

Saoula, N.; Handa, K.; Kesri, R.

2004-01-01

Full text.Transition metal carbides and nitrides attract large technological interest due to their unique properties like high hardness and young modulus, high electric conductivity, a considerable high-temperature strength, high corrosion resistance and high melting or decomposition temperatures. They have been applied as coatings for tools because of their superior properties. these materials have such properties due to atomic bonding, which shows a mixed covalent, metallic and ionic character. Among these nitrides and carbides titanium carbide is a compound of particular importance. Titanium carbide combines the advantages of a high melting point (3140 celsius degree) and hardness (3000 Hv) with those of relative lightness (density 4.93 10 3 Kg m -3 ).It also exhibits high resistance to both corrosion and oxidation and a relatively low friction coefficient. Usually, TiC films are produced by deposition with plasma-enhanced CVD (PCVD), thermal chemical vapour deposition (CVD) or activated reactive evaporation methods. However, these methods require high temperature (>600 celsius degree) substrates to achieve the deposition, which sometimes causes thermal damage to the deposited films. At temperature above 550 celsius degree, thermal diffusion of materials not suitable may also occur. In addition, it has been reported that the maximum temperature which permits the appropriate coating of hardened steel tools is 500 celsius degree. Therefore, it is desirable to develop a deposition technique for TiC films using low-temperature substrates to avoid thermal damage. So, different physical vapour deposition (PVD) processes for deposition of TiC at relatively low temperatures have been used through the years. These processes are based on vaporisation of titanium in hydrocarbon atmosphere or on sputtering of solid TiC target or titanium target in hydrocarbon atmosphere. the most often-used hydrocarbon gases are methane, acetylene, ethene and ethane. In previous works, we

Properties of ordered titanium templates covered with Au thin films for SERS applications

Science.gov (United States)

Grochowska, Katarzyna; Siuzdak, Katarzyna; Sokołowski, Michał; Karczewski, Jakub; Szkoda, Mariusz; Śliwiński, Gerard

2016-12-01

Currently, roughened metal nanostructures are widely studied as highly sensitive Raman scattering substrates that show application potential in biochemistry, food safety or medical diagnostic. In this work the structural properties and the enhancement effect due to surface enhanced Raman scattering (SERS) of highly ordered nano-patterned titanium templates covered with thin (5-20 nm) gold films are reported. The templates are formed by preparation of a dense structure of TiO2 nanotubes on a flat Ti surface (2 × 2 cm2) and their subsequent etching down to the substrate. SEM images reveal the formation of honeycomb nanostructures with the cavity diameter of 80 nm. Due to the strongly inhomogeneous distribution of the electromagnetic field in the vicinity of the Au film discontinuities the measured average enhancement factor (107-108) is markedly higher than observed for bare Ti templates. The enhancement factor and Raman signal intensity can be optimized by adjusting the process conditions and thickness of the deposited Au layer. Results confirm that the obtained structures can be used in surface enhanced sensing.

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

Science.gov (United States)

Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.

2015-11-01

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G0W0, GW0 to partially self-consistent sc-GW0, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW0-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Directory of Open Access Journals (Sweden)

Fang-Hsing Wang

2015-01-01

Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

Structural and optical investigations of sol–gel derived lithium titanate thin films

International Nuclear Information System (INIS)

Łapiński, M.; Kościelska, B.; Sadowski, W.

2012-01-01

Highlights: ► Lithium titanate thin films were deposited on glass substrates by sol–gel method. ► After annealing at 550 °C samples had lithium titanate spinel structure. ► Above 80 h of annealing mixture of lithium titanate and titanium oxides was appeared. ► Optical transmittance decreased with increasing of annealing time. - Abstract: In this paper structural and optical studies of lithium titanate (LTO) thin films are presented. Nanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible lithium titanate phase was obtained after 20 h annealing. Increasing of annealing time over 20 h revealed appearance of titanium oxides phase. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength with increasing of annealing time. The optical band gap was calculated for direct allowed and indirect allowed transitions from optical absorption spectra.

Investigation of vanadium and nitride alloys thin layers deposited by PVD

Directory of Open Access Journals (Sweden)

Nouveau C.

2012-06-01

Full Text Available In this work we present the technique of magnetron vapor deposition and the effect of several deposition parameters on the structural and morphological properties of prepared thin films. It was noted that the deposition time has an effect on the crystallinity, mechanical properties such as residual stress, roughness surface and the layer composition from target products. Studies were carried out on layers of vanadium (V and the nitride vanadium (VN.

Gallium nitride based thin films for photon and particle radiation dosimetry

Energy Technology Data Exchange (ETDEWEB)

Hofstetter, Markus

2012-07-23

Ionization chambers have been used since the beginning of the 20th century for measuring ionizing radiation and still represent the ''gold standard'' in dosimetry. However, since the sensitivity of the devices is proportional to the detection volume, ionization chambers are not common in numerous medical applications, such as imaging. In these fields, spatially resolved dose information is, beside film-systems, usually measured with scintillators and photo-multipliers, which is a relatively complex and expensive technique. For thus much effort has been focused on the development of novel detection systems in the last decades and especially in the last few years. Examples include germanium or silicon photoconductive detectors, MOSFETs, and PIN-diodes. Although for these systems, miniaturization for spatially resolved detection is possible, they suffer from a range of disadvantages. Characteristics such as poor measurement stability, material degradation, and/or a limited measurement range prevent routine application of these techniques in medical diagnostic devices. This work presents the development and evaluation of gallium nitride (GaN) thin films and heterostructures to validate their application in x-ray detection in the medical regime. Furthermore, the impact of particle radiation on device response was investigated. Although previous publications revealed relatively low energy absorption of GaN, it is possible to achieve very high signal amplification factors inside the material due to an appropriate sensor configuration, which, in turn, compensates the low energy absorption. Thus, gallium nitride can be used as a photo-conductor with ohmic contacts. The conductive volume of the sensor changes in the presence of external radiation, which results in an amplified measurement signal after applying a bias voltage to the device. Experiments revealed a sensitivity of the device between air kerma rates of 1 {mu}Gy/s and 20 mGy/s. In this range

Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Nazon, J.; Sarradin, J.; Flaud, V.; Tedenac, J.C. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France); Frety, N. [Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

2008-09-22

The effects of processing parameters on the properties of tantalum nitride thin films deposited by radio frequency reactive sputtering have been investigated. The influence of the N{sub 2} partial and (Ar + N{sub 2}) total gas pressures as well as the sputtering power on the microstructure and electrical properties is reported. Rising the N{sub 2} partial pressure, from 2 to 10.7%, induces a change in the composition of the {delta}-TaN phase, from TaN to TaN{sub 1.13}. This composition change is associated with a drastic increase of the electrical resistivity over a 7.3% N{sub 2} partial pressure. The total gas pressure is revealed to strongly affect the film microstructure since a variation in both composition and grain size is observed when the gas pressure rises from 6.8 to 24.6 Pa. When the sputtering power varied between 50 and 110 W, an increase of the grain size related to a decrease of the electrical resistivity is observed.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

In Vitro and In Vivo Osteogenic Activity of Titanium Implants Coated by Pulsed Laser Deposition with a Thin Film of Fluoridated Hydroxyapatite

Directory of Open Access Journals (Sweden)

Luyuan Chen

2018-04-01

Full Text Available To enhance biocompatibility, osteogenesis, and osseointegration, we coated titanium implants, by krypton fluoride (KrF pulsed laser deposition, with a thin film of fluoridated hydroxyapatite (FHA. Coating was confirmed by scanning electron microscopy (SEM and scanning probe microscopy (SPM, while physicochemical properties were evaluated by attenuated reflectance Fourier transform infrared spectroscopy (ATR-FTIR. Calcium deposition, osteocalcin production, and expression of osteoblast genes were significantly higher in rat bone marrow mesenchymal stem cells seeded on FHA-coated titanium than in cells seeded on uncoated titanium. Implantation into rat femurs also showed that the FHA-coated material had superior osteoinductive and osseointegration activity in comparison with that of traditional implants, as assessed by microcomputed tomography and histology. Thus, titanium coated with FHA holds promise as a dental implant material.

Ion-induced stress relaxation during the growth of cubic boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Abendroth, B.E.

2004-08-01

in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Boltz, Janika

2011-12-12

Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

Characterisation of nano-structured titanium and aluminium nitride coatings by indentation, transmission electron microscopy and electron energy loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Girleanu, M., E-mail: maria.girleanu@uha.fr [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France); Pac, M.-J.; Louis, P. [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France); Ersen, O.; Werckmann, J. [Departement Structures et Interfaces, IPCMS (UMR CNRS 7504), Universite de Strasbourg, 23 rue du Loess, F-67087 Strasbourg (France); Rousselot, C. [Departement Micro Nano Sciences et Systemes, FEMTO-ST (UMR CNRS 6174), Universite de Franche-Comte, BP 71427, F-25211 Montbeliard (France); Tuilier, M.-H. [Mecanique, Materiaux et Procedes de Fabrication, LPMT (EA CNRS 4365), Universite de Haute Alsace, 61 rue Albert Camus, F-68093 Mulhouse (France)

2011-07-01

Titanium and aluminium nitride Ti{sub 1-x}Al{sub x}N films deposited by radiofrequency magnetron reactive sputtering onto steel substrate are examined by transmission electron microscopy over all the range of composition (x = 0, 0.5, 0.68, 0.86, 1). The deposition parameters are optimised in order to grow nitride films with low stress over all the composition range. Transmission electron microscopy cross-section images of Vickers indentation prints performed on that set of coatings show the evolution of their damage behaviour as increasing x Al content. Cubic Ti-rich nitrides consist of small grains clustered in rather large columns sliding along each other during indentation. Hexagonal Al-rich films grow in thinner columns which can be bent under the Vickers tip. Indentation tests carried out on TiN and AlN films are simulated using finite element modelling. Particular aspects of shear stresses and displacements in the coating/substrate are investigated. The growth mode and the nanostructure of two typical films, TiN and Ti{sub 0.14}Al{sub 0.86}N, are studied in detail by combining transmission electron microscopy cross-sections and plan views. Electron energy loss spectrum taken across Ti{sub 0.14}Al{sub 0.86}N film suggests that a part of nitrogen atoms is in cubic-like local environment though the lattice symmetry of Al-rich coatings is hexagonal. The poorly crystallised domains containing Ti and N atoms in cubic-like environment are obviously located in grain boundaries and afford protection of the coating against cracking.

Characterisation of nano-structured titanium and aluminium nitride coatings by indentation, transmission electron microscopy and electron energy loss spectroscopy

International Nuclear Information System (INIS)

Girleanu, M.; Pac, M.-J.; Louis, P.; Ersen, O.; Werckmann, J.; Rousselot, C.; Tuilier, M.-H.

2011-01-01

Titanium and aluminium nitride Ti 1-x Al x N films deposited by radiofrequency magnetron reactive sputtering onto steel substrate are examined by transmission electron microscopy over all the range of composition (x = 0, 0.5, 0.68, 0.86, 1). The deposition parameters are optimised in order to grow nitride films with low stress over all the composition range. Transmission electron microscopy cross-section images of Vickers indentation prints performed on that set of coatings show the evolution of their damage behaviour as increasing x Al content. Cubic Ti-rich nitrides consist of small grains clustered in rather large columns sliding along each other during indentation. Hexagonal Al-rich films grow in thinner columns which can be bent under the Vickers tip. Indentation tests carried out on TiN and AlN films are simulated using finite element modelling. Particular aspects of shear stresses and displacements in the coating/substrate are investigated. The growth mode and the nanostructure of two typical films, TiN and Ti 0.14 Al 0.86 N, are studied in detail by combining transmission electron microscopy cross-sections and plan views. Electron energy loss spectrum taken across Ti 0.14 Al 0.86 N film suggests that a part of nitrogen atoms is in cubic-like local environment though the lattice symmetry of Al-rich coatings is hexagonal. The poorly crystallised domains containing Ti and N atoms in cubic-like environment are obviously located in grain boundaries and afford protection of the coating against cracking.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi; Schwingenschlö gl, Udo

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

Titanium oxynitride thin films as high-capacity and high-rate anode materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Chiu, Kuo-Feng [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Su, Shih-Hsuan, E-mail: minimono42@gmail.com [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Leu, Hoang-Jyh [Master' s Program of Green Energy Science and Technology, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China); Hsia, Chen-Hsien [Department of Materials Science and Engineering, Feng Chia University, 100 Wenhwa Rd., Taichung 40724, Taiwan (China)

2015-12-01

Titanium oxynitride (TiO{sub x}N{sub y}) was synthesized by reactive magnetron sputtering in a mixed N{sub 2}/O{sub 2}/Ar gas at ambient temperature. TiO{sub x}N{sub y} thin films with various amounts of nitrogen contents were deposited by varying the N{sub 2}/O{sub 2} ratios in the background gas. The synthesized TiO{sub x}N{sub y} films with different compositions (TiO{sub 1.837}N{sub 0.060,} TiO{sub 1.890}N{sub 0.068,} TiO{sub 1.865}N{sub 0.073}, and TiO{sub 1.882}N{sub 0.163}) all displayed anatase phase, except TiO{sub 1.882}N{sub 0.163}. The impedances and grain sizes showed obvious variations with the nitrogen contents. A wide potential window from 3.0 V to 0.05 V, high-rate charge–discharge testing, and long cycle testing were applied to investigate the performances of synthesized TiO{sub x}N{sub y} and pure TiO{sub 2} as anodes for lithium-ion batteries. These TiO{sub x}N{sub y} anodes can be cycled under high rates of 125 μA/cm{sup 2} (10 °C) because of the lower charge–transfer resistance compared with the TiO{sub 2} anode. At 10 °C the discharge capacity of the optimal TiO{sub x}N{sub y} composition is 1.5 times higher than that of pure TiO{sub 2}. An unexpectedly large reversible capacity of ~ 300 μAh/cm{sup 2} μm (~ 800 mAh/g) between 1.0 V and 0.05 V was recorded for the TiO{sub x}N{sub y} anodes. The TiO{sub x}N{sub y} anode was cycled (3.0 V to 0.05 V) at 10 °C over 300 times without capacity fading while delivering a capacity of ~ 150 μAh/cm{sup 2} μm (~ 400 mAh/g). - Highlights: • Titanium oxynitride (TiO{sub x}N{sub y}) thin films as anode materials were studied. • TiO{sub x}N{sub y} thin films with various amounts of nitrogen contents were studied{sub .} • High rate capability of TiO{sub x}N{sub y} was studied.

Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

Science.gov (United States)

Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

2011-08-01

In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

Science.gov (United States)

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

International Nuclear Information System (INIS)

Wang Yige; Wang Li; Li Huanrong; Liu Peng; Qin Dashan; Liu Binyuan; Zhang Wenjun; Deng Ruiping; Zhang Hongjie

2008-01-01

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film. TEM image shows that the in-situ formed lanthanide complexes were homogeneously distributed throughout the whole thin film. The quantum yield and the number of water coordinated to lanthanide metal center have been theoretically determined based on the luminescence data. - Graphical abstract: Novel stable luminescent organic-inorganic hybrid titania thin film with high transparency activated by in-situ formed lanthanide complexes have been obtained at room temperature via a simple one-pot synthesis approach by using TTFA-modified titanium precursor with amphiphilic triblock copolymer P123. The obtained hybrid thin film displays bright red (or green), near-monochromatic luminescence due to the in-situ formed lanthanide complex

Focused ion beam induced deflections of freestanding thin films

International Nuclear Information System (INIS)

Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

2006-01-01

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10 14 and 10 17 ions/cm 2 . Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation

Microbridge tests on gallium nitride thin films

International Nuclear Information System (INIS)

Huang, Hai-You; Li, Zhi-Ying; Lu, Jun-Yong; Wang, Zhi-Jia; Zhang, Tong-Yi; Wang, Chong-Shun; Lau, Kei-May; Chen, Kevin Jing

2009-01-01

In this work, we develop further the microbridge testing method by deriving a closed formula of deflection versus load, which is applied at an arbitrary position on the microbridge beam. Testing a single beam at various positions allows us to characterize simultaneouslyYoung's modulus and residual stress of the beam. The developed method was then used to characterize the mechanical properties of GaN thin films on patterned-Si (1 1 1) substrates grown by metal organic chemical vapor deposition (MOCVD). The microbridge samples were fabricated by using the microelectromechanical fabrication technique and tested with a nanoindentation system. Young's modulus and residual stress of the GaN films were determined to be 287 ± 190 GPa and 851 ± 155 MPa, respectively. In addition, alternative measurements of the residual stress, Young's modulus and hardness of the GaN films, were conducted with micro-Raman spectroscopy and the nanoindentation test, yielding the corresponding values of 847 ± 46 MPa, 269.0 ± 7.0 GPa and 17.8 ± 1.1 GPa

Thermoluminescence of thin films deposited by laser ablation; Termoluminiscencia de peliculas delgadas depositadas por ablacion laser

Energy Technology Data Exchange (ETDEWEB)

Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R. [Depto. de Fisica, ININ, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

2003-07-01

Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN{sub x} whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

International Nuclear Information System (INIS)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

2010-01-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

Directory of Open Access Journals (Sweden)

David W. Berzins

2012-07-01

Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

Science.gov (United States)

Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

2018-04-01

In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Effects of atomic oxygen on titanium dioxide thin film

Science.gov (United States)

Shimosako, Naoki; Hara, Yukihiro; Shimazaki, Kazunori; Miyazaki, Eiji; Sakama, Hiroshi

2018-05-01

In low earth orbit (LEO), atomic oxygen (AO) has shown to cause degradation of organic materials used in spacecrafts. Similar to other metal oxides such as SiO2, Al2O3 and ITO, TiO2 has potential to protect organic materials. In this study, the anatese-type TiO2 thin films were fabricated by a sol-gel method and irradiated with AO. The properties of TiO2 were compared using mass change, scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmittance spectra and photocatalytic activity before and after AO irradiation. The results indicate that TiO2 film was hardly eroded and resistant against AO degradation. AO was shown to affects only the surface of a TiO2 film and not the bulk. Upon AO irradiation, the TiO2 films were slightly oxidized. However, these changes were very small. Photocatalytic activity of TiO2 was still maintained in spite of slight decrease upon AO irradiation, which demonstrated that TiO2 thin films are promising for elimination of contaminations outgassed from a spacecraft's materials.

Potential for photocatalytic degradation of the potassic diclofenac using scandium and silver modified titanium dioxide thin films

International Nuclear Information System (INIS)

Ciola, R.A.; Oliveira, C.T.; Lopes, S.A.; Cavalheiro, A.A.

2011-01-01

The potential for photocatalytic degradation of the potassic diclofenac drug was investigated using titanium dioxide thin films modified with two modifier types, scandium and silver, both prepared by Sol-Gel method. It was demonstrated by UVVis spectroscopy analysis of the solutions containing the drug, under UV-A light irradiation that the degradation efficiency of the titanium dioxide photocatalyst is dependent of the semiconductor nature and that the scandium accelerates the first step of the degradation when compared to the silver. This result seems to be related to the redox potential of the electron-hole pair, once the scandium modifying sample generates a p type semiconductor that reduces the band gap. The extra holes attract more strongly the chorine ion present in diclofenac and leading to the releasing more easily. However, after the first byproducts degradation the following steps are not facilitated, making the silver modifying more advantageous. (author)

Deposition of Al N and Ti N thin films on substrates of stainless steel SS304 using plasma focus device

International Nuclear Information System (INIS)

Al-Hawat, Sh.; Soukieh, M.; Abou Kharoub, M.; Al-Sadat, W.

2006-06-01

A 2.8 kJ plasma focus device was used to deposit thin films of aluminium nitride Al N and titanium nitride Ti N on a stainless steel 394 substrate, in order to improve its surface properties. The deposition process was carried out using various number of nitrogen plasma shots at pressures 0.5-0.75 mbar and at different sample's distances from the anode. The plasma diagnostics was achieved using the voltage and current signals recorded by a voltage divider and Rogovskii coil to determine the temperature and plasma density. The surface hardness of SS-304 was increased by about 50% after plasma coating and the thickness of the coated layers was about 1-2μm. This study shows that the hardness is increased with increasing the number of shots and decreased with the distance from the anode. The coated layers were characterized and a qualitative understanding of the deposition process was given. (author)

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

2008-07-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

2008-01-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Polarization-dependent single-beam laser-induced grating-like effects on titanium films

International Nuclear Information System (INIS)

Camacho-Lopez, Santiago; Evans, Rodger; Escobar-Alarcon, Luis; Camacho-Lopez, Miguel A.; Camacho-Lopez, Marco A.

2008-01-01

In this paper we present results on polarization-dependent laser-induced effects on titanium (Ti) thin films. We irradiated the titanium films, in ambient air, using a nanosecond Nd:YAG laser (532 nm, 9 ns pulse duration, 10 Hz). Using a series of pulses of fluence well below the ablation threshold, it was possible to form grating-like structures, whose grooves run parallel to the linear polarization of the incident beam. No grating-like structures were obtained when circularly polarized light was used. Our results revealed the remarkable formation of tiny (100 nm and even smaller diameter) craters, which self-arrange quasi-periodically along the ridges (never on the valleys) of the grating-like structure. Optical and scanning electron microscopy were used to study the laser-induced changes on the surface of the titanium films. Micro-Raman spectroscopy was used to analyze the irradiated areas on the titanium films. The Raman analysis demonstrated that the grooves in the grating-like structure, build up from the laser-induced oxidation of titanium. This is the first time, to the best of our knowledge, that periodic surface structures are reported to be induced below the ablation threshold regime, with the grooves made of crystalline metal oxide, in this case TiO 2 in the well-known Rutile phase. The laser irradiated areas on the film acquired selective (upon recording polarization) holographic reflectance

Polarization-dependent single-beam laser-induced grating-like effects on titanium films

Energy Technology Data Exchange (ETDEWEB)

Camacho-Lopez, Santiago [Departamento de Optica, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km 107 Carretera Tijuana-Ensenada, Ensenada, Baja California 22860 (Mexico)], E-mail: camachol@cicese.mx; Evans, Rodger [Departamento de Optica, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km 107 Carretera Tijuana-Ensenada, Ensenada, Baja California 22860 (Mexico); Escobar-Alarcon, Luis [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico DF 11801 (Mexico); Camacho-Lopez, Miguel A. [Facultad de Medicina, Universidad Autonoma del Estado de Mexico, Paseo Tollocan s/n, esq. Jesus Carranza, Toluca, Estado de Mexico 50120 (Mexico); Camacho-Lopez, Marco A. [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Tollocan s/n, esq. Paseo Colon, Toluca, Estado de Mexico, 50110 (Mexico)

2008-12-30

In this paper we present results on polarization-dependent laser-induced effects on titanium (Ti) thin films. We irradiated the titanium films, in ambient air, using a nanosecond Nd:YAG laser (532 nm, 9 ns pulse duration, 10 Hz). Using a series of pulses of fluence well below the ablation threshold, it was possible to form grating-like structures, whose grooves run parallel to the linear polarization of the incident beam. No grating-like structures were obtained when circularly polarized light was used. Our results revealed the remarkable formation of tiny (100 nm and even smaller diameter) craters, which self-arrange quasi-periodically along the ridges (never on the valleys) of the grating-like structure. Optical and scanning electron microscopy were used to study the laser-induced changes on the surface of the titanium films. Micro-Raman spectroscopy was used to analyze the irradiated areas on the titanium films. The Raman analysis demonstrated that the grooves in the grating-like structure, build up from the laser-induced oxidation of titanium. This is the first time, to the best of our knowledge, that periodic surface structures are reported to be induced below the ablation threshold regime, with the grooves made of crystalline metal oxide, in this case TiO{sub 2} in the well-known Rutile phase. The laser irradiated areas on the film acquired selective (upon recording polarization) holographic reflectance.

Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Directory of Open Access Journals (Sweden)

Chodun Rafał

2016-09-01

Full Text Available This paper presents the effects of elimination of current oscillations within the coaxial plasma accelerator during IPD deposition process on the morphology, phase structure and properties of synthesized TiN coatings. Current observations of waveforms have been made by use of an oscilloscope. As a test material for experiments, titanium nitride TiN coatings synthesized on silicon and high-speed steel substrates were used. The coatings morphology, phase composition and wear resistance properties were determined. The character of current waveforms in the plasma accelerator electric circuit plays a crucial role during the coatings synthesis process. Elimination of the current oscillations leads to obtaining an ultrafine grained structure of titanium nitride coatings and to disappearance of the tendency to structure columnarization. The coatings obtained during processes of a non-oscillating character are distinguished by better wear-resistance properties.

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

International Nuclear Information System (INIS)

Mehmood, Faisal; Pachter, Ruth; Murphy, Neil R.; Johnson, Walter E.

2015-01-01

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G 0 W 0 , GW 0 to partially self-consistent sc-GW 0 , as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW 0 -BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations

The role of surface oxides on hydrogen sorption kinetics in titanium thin films

Science.gov (United States)

Hadjixenophontos, Efi; Michalek, Lukas; Roussel, Manuel; Hirscher, Michael; Schmitz, Guido

2018-05-01

Titanium is presently discussed as a catalyst to accelerate the hydrogenation kinetics of hydrogen storage materials. It is however known that H absorption in Ti decisively depends on the surface conditions (presence or absence of the natural surface oxide). In this work, we use Ti thin films of controlled thickness (50-800 nm) as a convenient tool for quantifying the atomic transport. XRD and TEM investigations allow us to follow the hydrogenation progress inside the film. Hydrogenation of TiO2/Ti bi-layers is studied at 300 °C, for different durations (10 s to 600 min) and at varying pressures of pure H2 atmosphere. Under these conditions, the hydrogenation is found to be linear in time. By comparing films with and without TiO2, as well as by studying the pressure dependence of hydrogenation, it is demonstrated that hydrogen transport across the oxide represents the decisive kinetic barrier rather than the splitting of H2 molecules at the surface. Hydrogenation appears by a layer-like reaction initiated by heterogeneous nucleation at the backside interface to the substrate. The linear growth constant and the H diffusion coefficient inside the oxide are quantified, as well as a reliable lower bound to the hydrogen diffusion coefficient in Ti is derived. The pressure dependence of hydrogen absorption is quantitatively modelled.

THz spectroscopy on superconducting NbN thin films

Energy Technology Data Exchange (ETDEWEB)

Daschke, Lena; Pracht, Uwe S.; Dressel, Martin; Scheffler, Marc [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Ilin, Konstantin S.; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme, Karlsruher Institut fuer Technologie (Germany)

2015-07-01

Epitaxial thin-film niobium nitride (NbN) is a conventional BCS superconductor. In presence of strong disorder, however, electronic inhomogeneities appear, which is not fully understood yet. To obtain a better insight into the physics of such disordered materials, studies on model systems such as structurally tailored films might be useful. Furthermore, disordered NbN films are used for single-photon detection devices, whose proper performance depends on a profound understanding of the superconducting properties. The studied NbN films have a T{sub c} ranging from 10 to 15 K and the superconducting energy gap is easily accessible with THz spectroscopy (0.4 - 5.6 meV). We investigate thin films of NbN sputtered on a sapphire substrate. With a Mach-Zehnder interferometer we measure the amplitude and phase shift of radiation transmitted through the thin-film sample. From there we can determine the real and imaginary parts of the optical conductivity. These results give information about the energy gap, Cooper pair density, and quasiparticle dynamics, including the temperature evolution of these quantities. We found that a film with 10 nm thickness roughly follows the BCS behavior, as expected. We will present results of our measurements on several different NbN samples.

Nitridation of vanadium by ion beam irradiation

International Nuclear Information System (INIS)

Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

1994-01-01

The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

Spectro-ellipsometric studies of sputtered amorphous Titanium dioxide thin films: simultaneous determination of refractive index, extinction coefficient, and void distribution

CERN Document Server

Lee, S I; Oh, S G

1999-01-01

Amorphous titanium dioxide thin films were deposited onto silicon substrates by using RF magnetron sputtering, and the index of refraction, the extinction coefficient, and the void distribution of these films were simultaneously determined from the analyses of there ellipsometric spectra. In particular, our novel strategy, which combines the merits of multi-sample fitting, the dual dispersion function, and grid search, was proven successful in determining optical constants over a wide energy range, including the energy region where the extinction coefficient was large. Moreover, we found that the void distribution was dependent on the deposition conditions, such as the sputtering power, the substrate temperature, and the substrate surface.

Improvement of orthodontic friction by coating archwire with carbon nitride film

International Nuclear Information System (INIS)

Wei Songbo; Shao Tianmin; Ding Peng

2011-01-01

In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp 2 carbon dominated structures, and diversiform bonds (N-C, N≡C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp 2 C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

Improvement of orthodontic friction by coating archwire with carbon nitride film

Energy Technology Data Exchange (ETDEWEB)

Wei Songbo [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shao Tianmin, E-mail: shaotm@mail.tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Ding Peng [Department of Orthodontics, Peking University School and Hospital of Stomatology, Beijing 100081 (China)

2011-10-01

In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp{sup 2} carbon dominated structures, and diversiform bonds (N-C, N{identical_to}C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp{sup 2}C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

Nitriding of Ti substrate using energetic ions from plasma focus device

International Nuclear Information System (INIS)

Henriquez, A; Bhuyan, H; Favre, M; Bora, B; Wyndham, E; Chuaqui, H; Mändl, S; Gerlach, J W; Manova, D

2012-01-01

Plasma Focus (PF) discharge is a pulsed plasma producing discharge that generates high temperature and high density plasma for a short duration. PF devices are known to emit intense ion beams pulses of characteristic energy in the keV to a few MeV range, in a time scale of tens of nanoseconds. We have previously investigated the ion flux and energy spectrum of ion beams emitted from a low energy PF, operating at 20 kV, with 1.8 kJ stored energy. It was observed that the ion beams have wide range of energy and intensity spectra with a clear angular anisotropy. Due to the wide range of ion energy and intensity spectra PF has become a subject of current interest for its applications in material sciences including surface modification and thin film deposition. The purpose of this study is the formation of titanium nitride (TiN) thin film and to investigate the structural properties of the TiN thin films in terms of PF angular positions. Substrates like Ti and Ti/Si were nitrided in a 1.8 kJ PF device at different angular positions with respect to the PF axis in order to correlate their surface properties with ion beam parameters. Preliminary characterizations of the ion implanted substrates have been conducted, using SEM, EDX and XRD. Our results indicate the formation of nanocrystalline TiN thin film only in certain angular positions. Angular dependency of the surface morphology was observed, which shows that the surface features strongly depends on ion beam energy and flux. With increasing angular positions, a reduction in the deposition rate and the sputter rate is observed. A pronounced nanostructured surface is only observed at the axis of the pinched plasma column, indicating the dominant role of sputtering and perhaps melting and fast re-crystallization of the surface in creating the nanostructures.

Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests

International Nuclear Information System (INIS)

Merle, B.; Goeken, M.

2011-01-01

A bulge test setup was used to determine the fracture toughness of amorphous low-pressure chemical vapor deposited (LPCVD) silicon nitride films with various thicknesses in the range 40-108 nm. A crack-like slit was milled in the center of each free-standing film with a focused ion beam, and the membrane was deformed in the bulge test until failure occurred. The fracture toughness K IC was calculated from the pre-crack length and the stress at failure. It is shown that the membrane is in a transition state between pure plane-stress and plane-strain which, however, had a negligible influence on the measurement of the fracture toughness, because of the high brittleness of silicon nitride and its low Young's modulus over yield strength ratio. The fracture toughness K IC was found to be constant at 6.3 ± 0.4 MPa m 1/2 over the whole thickness range studied, which compares well with bulk values. This means that the fracture toughness, like the Young's modulus, is a size-independent quantity for LPCVD silicon nitride. This presumably holds true for all amorphous brittle ceramic materials.

Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire

Energy Technology Data Exchange (ETDEWEB)

Douglass, K.; Hunt, S. [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Teplyakov, A., E-mail: andrewt@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Opila, R.L. [Department of Material Science and Engineering, University of Delaware, Newark, DE 19716 (United States)

2010-12-15

Surface preparation procedures for indium gallium nitride (InGaN) thin films were analyzed for their effectiveness for carbon and oxide removal as well as for the resulting surface roughness. Aqua regia (3:1 mixture of concentrated hydrochloric acid and concentrated nitric acid, AR), hydrofluoric acid (HF), hydrochloric acid (HCl), piranha solution (1:1 mixture of sulfuric acid and 30% H{sub 2}O{sub 2}) and 1:9 ammonium sulfide:tert-butanol were all used along with high temperature anneals to remove surface contamination. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were utilized to study the extent of surface contamination and surface roughness, respectively. The ammonium sulfide treatment provided the best overall removal of oxygen and carbon. Annealing over 700 deg. C after a treatment showed an even further improvement in surface contamination removal. The piranha treatment resulted in the lowest residual carbon, while the ammonium sulfide treatment leads to the lowest residual oxygen. AFM data showed that all the treatments decreased the surface roughness (with respect to as-grown specimens) with HCl, HF, (NH{sub 4}){sub 2}S and RCA procedures giving the best RMS values ({approx}0.5-0.8 nm).

Nucleophilic stabilization of water-based reactive ink for titania-based thin film inkjet printing

DEFF Research Database (Denmark)

Gadea, Christophe; Marani, Debora; Esposito, Vincenzo

2017-01-01

Drop on demand deposition (DoD) of titanium oxide thin films (<500 nm) is performed via a novel titanium-alkoxide-based solution that is tailored as a reactive ink for inkjet printing. The ink is developed as water-based solution by a combined use of titanium isopropoxide and n-methyldiethanolami...

Studies of tantalum nitride thin film resistors

International Nuclear Information System (INIS)

Langley, R.A.

1975-01-01

Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

Science.gov (United States)

1985-12-11

ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Energy Technology Data Exchange (ETDEWEB)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

2010-10-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

In situ characterization of thin film growth: Boron nitride on silicon

International Nuclear Information System (INIS)

Fukarek, W.

2001-01-01

Real-time ellipsometry (RTE) in combination with particle flux measurement is applied to ion beam assisted deposition of boron nitride (BN) films. RTE is used as a tool for process diagnostic to improve the deposition stability. A novel technique for the determination of absolute density depth profiles from dynamic growth rate data and film forming particle flux is employed. From real-time cantilever curvature measurement and simultaneously recorded film thickness data instantaneous stress depth profiles are derived with a depth resolution in the nm range. The synergistic effects on the information obtained from RTE, particle flux, and cantilever bending data are demonstrated. The density of turbostratic BN (tBN) is found to increase slightly with film thickness while the compressive stress decreases, indicating an increasing quality and/or size of crystallites in the course of film growth. Refractive index and density depth profiles in cubic BN (cBN) films correspond perfectly to structural information obtained from dark field transmission electron microscope graphs. The established tBN/cBN two-layer model is found to be a crude approximation that has to be replaced by a three-layer model including nucleation, grain growth, and coalescence of cBN. The instantaneous compressive stress in a homogeneous tBN film is found to decrease, while the density increases during growth. The instantaneous compressive stress depth profiles in cBN films are more complex and not easy to understand but reliable information on the structural evolution during growth can be extracted

Laser beam welding of titanium nitride coated titanium using pulse-shaping

Directory of Open Access Journals (Sweden)

Milton Sergio Fernandes de Lima

2005-09-01

Full Text Available A new welding method which allows the assembly of two titanium nitride coated titanium parts is proposed. The welding procedure utilizes the possibility for pulse-shaping in order to change the energy distribution profile during the laser pulse. The pulse-shaping is composed of three elements: a a short high power pulse for partial ablation at the surface; b a long pulse for thermal penetration; and c a quenching slope for enhanced weldability. The combination of these three elements produces crack-free welds. The weld microstructure is changed in comparison to normal welding, i.e. with a rectangular pulse, as the nitrogen and the microhardness are more homogenously distributed in the weld under pulse-shaping conditions. This laser pulse dissolves the TiN layer and allows nitrogen to diffuse into the melt pool, also contributing to an enhanced weldability by providing suitable thermal conditions.

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Science.gov (United States)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

Sixfold ring clustering in sp2-dominated carbon and carbon nitride thin films: A Raman spectroscopy study

International Nuclear Information System (INIS)

Abrasonis, G.; Gago, R.; Vinnichenko, M.; Kreissig, U.; Kolitsch, A.; Moeller, W.

2006-01-01

The atomic arrangement in sp 2 -dominated carbon (C) and carbon nitride (CN x ) thin films has been studied by Raman spectroscopy as a function of substrate temperature and, in the case of CN x , different N incorporation routes (growth methods). In this way, materials composing graphitelike, fullerenelike (FL), and paracyanogenlike structures have been compared. The results show that each type of arrangement results in a characteristic set of the Raman spectra parameters, which describe the degree of aromatic clustering, bond length, and angle distortion and order in sixfold structures. In the case of C films, the atomic structure evolves with substrate temperature from a disordered network to nanocrystalline planar graphitic configurations, with a progressive promotion in size and ordering of sixfold ring clusters. Nitrogen incorporation favors the promotion of sixfold rings in highly disordered networks produced at low temperatures, but precludes the formation of extended graphiticlike clusters at elevated substrate temperatures (>700 K). In the latter case, N introduces a high degree of disorder in sixfold ring clusters and enhances the formation of a FL microstructure. The formation and growth of aromatic clusters are discussed in terms of substrate temperature, N incorporation, growth rate, film-forming sources, and concurrent bombardment by hyperthermal particles during growth

Production of AlN films: ion nitriding versus PVD coating

International Nuclear Information System (INIS)

Figueroa, U.; Salas, O.; Oseguera, J.

2004-01-01

The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

International Nuclear Information System (INIS)

Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

2015-01-01

TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

International Nuclear Information System (INIS)

Mashovets, N.S.; Pastukh, I.M.; Voloshko, S.M.

2017-01-01

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm 2 . The above material shows the promise of the technology of low

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

Energy Technology Data Exchange (ETDEWEB)

Mashovets, N.S., E-mail: mashovets@rambler.ru [Khmelnickiy National University (Ukraine); Pastukh, I.M., E-mail: pastim@mail.ru [Khmelnickiy National University (Ukraine); Voloshko, S.M. [Khmelnickiy National University (Ukraine); National Technical University of Ukraine “Kyiv Polytechnic Institute” (Ukraine)

2017-01-15

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm{sup 2}. The above material shows the promise of the technology of low

Photocatalytic Activity of Nanostructured Titanium Dioxide Thin Films

Directory of Open Access Journals (Sweden)

Zdenek Michalcik

2012-01-01

Full Text Available The aim of this paper is to investigate the properties and photocatalytic activity of nanostructured TiO2 layers. The glancing angle deposition method with DC sputtering at low temperature was applied for deposition of the layers with various columnar structures. The thin-film structure and surface morphology were analyzed by XRD, SEM, and AFM analyses. The photocatalytic activity of the films was determined by the rate constant of the decomposition of the Acid Orange 7. In dependence on the glancing angle deposition parameters, three types of columnar structures were obtained. The films feature anatase/rutile and/or amorphous structures depending on the film architecture and deposition method. All the films give the evidence of the photocatalytic activity, even those without proved anatase or rutile structure presence. The impact of columnar boundary in perspective of the photocatalytic activity of nanostructured TiO2 layers was discussed as the possible factor supporting the photocatalytic activity.

Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

International Nuclear Information System (INIS)

Bauer, C.

2003-10-01

This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

Plasma nitridation optimization for sub-15 A gate dielectrics

NARCIS (Netherlands)

Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H-SiC in diluted N{sub 2}O ambient

Energy Technology Data Exchange (ETDEWEB)

Wong, Yew Hoong [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

2012-10-15

A systematic investigation on the structural, chemical, and electrical properties of thermally oxidized and nitrided sputtered Zr thin film in various N{sub 2}O ambient (10-100%) at 500 Degree-Sign C for 15 min to form Zr-oxynitride on 4H-SiC substrate has been carried out. The chemical composition, depth profile analysis, and energy band alignment have been evaluated by X-ray photoelectron spectrometer. Zr-oxynitride layer and its interfacial layer comprised of compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N were identified. A model related to the oxidation and nitridation mechanism has been suggested. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, and Raman analyses. A proposed crystal structure was employed to elucidate the surface roughness and topographies of the samples, which were characterized by atomic force microscopy. The electrical results revealed that 10% N{sub 2}O sample has possessed the highest breakdown field and reliability. This was owing to the confinement of nitrogen-related compounds of Zr-O-N and/or Zr-N at or near interfacial layer region, smaller grain with finer structure on the surface, the lowest interface trap density, total interface trap density, and effective oxide charge, and highest barrier height between conduction band edge of oxide and semiconductor. -- Highlights: Black-Right-Pointing-Pointer Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. Black-Right-Pointing-Pointer Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N{sub 2}O gas. Black-Right-Pointing-Pointer Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. Black-Right-Pointing-Pointer The highest electrical breakdown and highest reliability at diluted N{sub 2}O of 10%.

Inkjet-printed transparent nanowire thin film features for UV photodetectors

KAUST Repository

Chen, Shih Pin; Duran Retamal, Jose Ramon; Lien, Der Hsien; He, Jr-Hau; Liao, Ying Chih

2015-01-01

In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable

Method for preparing microstructure arrays on the surface of thin film material

KAUST Repository

Wang, Peng; Tang, Bo; Zhang, Lianbin

2017-01-01

Methods are provided for growing a thin film of a nanoscale material. Thin films of nanoscale materials are also provided. The films can be grown with microscale patterning. The method can include vacuum filtration of a solution containing the nanostructured material through a porous substrate. The porous substrate can have a pore size that is comparable to the size of the nanoscale material. By patterning the pores on the surface of the substrate, a film can be grown having the pattern on a surface of the thin film, including on the top surface opposite the substrate. The nanoscale material can be graphene, graphene oxide, reduced graphene oxide, molybdenum disulfide, hexagonal boron nitride, tungsten diselenide, molybdenum trioxide, or clays such as montmorillonite or lapnotie. The porous substrate can be a porous organic or inorganic membrane, a silicon stencil membrane, or similar membrane having pore sizes on the order of microns.

Method for preparing microstructure arrays on the surface of thin film material

KAUST Repository

Wang, Peng

2017-02-09

Methods are provided for growing a thin film of a nanoscale material. Thin films of nanoscale materials are also provided. The films can be grown with microscale patterning. The method can include vacuum filtration of a solution containing the nanostructured material through a porous substrate. The porous substrate can have a pore size that is comparable to the size of the nanoscale material. By patterning the pores on the surface of the substrate, a film can be grown having the pattern on a surface of the thin film, including on the top surface opposite the substrate. The nanoscale material can be graphene, graphene oxide, reduced graphene oxide, molybdenum disulfide, hexagonal boron nitride, tungsten diselenide, molybdenum trioxide, or clays such as montmorillonite or lapnotie. The porous substrate can be a porous organic or inorganic membrane, a silicon stencil membrane, or similar membrane having pore sizes on the order of microns.

P-111 : a thin film encapsulation stack for PLED and OLED displays

NARCIS (Netherlands)

Assche, van F.J.H.; Vangheluwe, R.T.; Maes, J.W.C.; Mischke, W.S.; Bijker, M.D.; Dings, F.C.; Evers, M.F.J.; Kessels, W.M.M.; Sanden, van de M.C.M.

2004-01-01

For a thin film (<1 µm) encapsulation stack consisting of only 3 plasma deposited silicon nitride layers separated by a thin (<100 nm) organic layer, a water permeation rate of below 10–5 g/m2 per day at 50 °C and 50% rH has been measured using the Ca test. PLED lifetimes of over 500 hours at 60 °C

Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

Science.gov (United States)

Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

2017-11-01

In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

Gold film with gold nitride - A conductor but harder than gold

International Nuclear Information System (INIS)

Siller, L.; Peltekis, N.; Krishnamurthy, S.; Chao, Y.; Bull, S.J.; Hunt, M.R.C.

2005-01-01

The formation of surface nitrides on gold films is a particularly attractive proposition, addressing the need to produce harder, but still conductive, gold coatings which reduce wear but avoid the pollution associated with conventional additives. Here we report production of large area gold nitride films on silicon substrates, using reactive ion sputtering and plasma etching, without the need for ultrahigh vacuum. Nanoindentation data show that gold nitride films have a hardness ∼50% greater than that of pure gold. These results are important for large-scale applications of gold nitride in coatings and electronics

Influence of Thin-Film Adhesives in Pullout Tests Between Nickel-Titanium Shape Memory Alloy and Carbon Fiber-Reinforced Polymer Matrix Composites

Science.gov (United States)

Quade, Derek J.; Jana, Sadhan; McCorkle, Linda S.

2018-01-01

Strips of nickel-titanium (NiTi) shape memory alloy (SMA) and carbon fiber-reinforced polymer matrix composite (PMC) were bonded together using multiple thin film adhesives and their mechanical strengths were evaluated under pullout test configuration. Tensile and lap shear tests were conducted to confirm the deformation of SMAs at room temperature and to evaluate the adhesive strength between the NiTi strips and the PMC. Optical and scanning electron microscopy techniques were used to examine the interfacial bonding after failure. Simple equations on composite tensile elongation were used to fit the experimental data on tensile properties. ABAQUS models were generated to show the effects of enhanced bond strength and the distribution of stress in SMA and PMC. The results revealed that the addition of thin film adhesives increased the average adhesive strength between SMA and PMC while halting the room temperature shape memory effect within the pullout specimen.

Degradation of nitride coatings in low-pressure gas discharge plasma

Science.gov (United States)

Ivanov, Yurii; Shugurov, Vladimir; Krysina, Olga; Petrikova, Elizaveta; Tolkachev, Oleg

2017-12-01

The paper provides research data on the defect structure, mechanical characteristics, and tribological properties of commercially pure VT1-0 titanium exposed to surface modification on a COMPLEX laboratory electron-ion plasma setup which allows nitriding, coating deposition, and etching in low-pressure gas discharge plasma in a single vacuum cycle. It is shown that preliminary plasma nitriding forms a columnar Ti2N phase in VT1-0 titanium and that subsequent TiN deposition results in a thin nanocrystalline TiN layer. When the coating-substrate system is etched, the coating fails and the tribological properties of the material degrade greatly.

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in- situ formed lanthanide complexes

Science.gov (United States)

Wang, Yige; Wang, Li; Li, Huanrong; Liu, Peng; Qin, Dashan; Liu, Binyuan; Zhang, Wenjun; Deng, Ruiping; Zhang, Hongjie

2008-03-01

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film. TEM image shows that the in-situ formed lanthanide complexes were homogeneously distributed throughout the whole thin film. The quantum yield and the number of water coordinated to lanthanide metal center have been theoretically determined based on the luminescence data.

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

International Nuclear Information System (INIS)

Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

2017-01-01

Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

The Importance Of Surface Topography For The Biological Properties Of Nitrided Diffusion Layers Produced On Ti6Al4V Titanium Alloy

Directory of Open Access Journals (Sweden)

Wierzchoń T.

2015-09-01

Full Text Available Diffusion nitrided layers produced on titanium and its alloys are widely studied in terms of their application for cardiac and bone implants. The influence of the structure, the phase composition, topography and surface morphology on their biological properties is being investigated. The article presents the results of a study of the topography (nanotopography of the surface of TiN+Ti2N+αTi(N nitrided layers produced in low-temperature plasma on Ti6Al4V titanium alloy and their influence on the adhesion of blood platelets and their aggregates. The TEM microstructure of the produced layers have been examined and it was demonstrated that the interaction between platelets and the surface of the titanium implants subjected to glow-discharge nitriding can be shaped via modification of the roughness parameters of the external layer of the TiN titanium nitride nanocrystalline zone.

Sol-gel deposition and electrical properties of laser irradiated Cu doped TiO2 multilayer thin films

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available Multilayer thin films (3, 5 and 7 of 20% copper doped titanium dioxide (Cu:TiO2 have been deposited on glass substrates by sol-gel spin coating method. After deposition, films have been irradiated by a beam of continuous wave diode laser (532 nm for two minutes at the angle of 45°. Structural, surface morphology and electrical properties of films have been investigated by X-rays diffraction (XRD, scanning electron microscope (SEM and four point probe technique respectively. XRD shows the formation of titanium copper oxide. Surface morphology of thin films indicated that the average grain size is increased by increasing the number of layers. The average sheet resistivity of 3, 5 and 7 layers of thin films measured by four point probe technique is 2.2 × 104, 1.2 × 104 and 1.0 × 104 (Ohm-cm respectively. The present study will facilitate a cost effective and environmental friendly study for several properties of materials. Keywords: Cu:TiO2, Multilayer thin films, Diode laser

Characterisation of DLC films deposited using titanium isopropoxide (TIPOT) at different flow rates.

Science.gov (United States)

Said, R; Ali, N; Ghumman, C A A; Teodoro, O M N D; Ahmed, W

2009-07-01

In recent years, there has been growing interest in the search for advanced biomaterials for biomedical applications, such as human implants and surgical cutting tools. It is known that both carbon and titanium exhibit good biocompatibility and have been used as implants in the human body. It is highly desirable to deposit biocompatible thin films onto a range of components in order to impart biocompatibility and to minimise wear in implants. Diamond like carbon (DLC) is a good candidate material for achieving biocompatibility and low wear rates. In this study, thin films of diamond-like-carbon DLC were deposited onto stainless steel (316) substrates using C2H2, argon and titanium isopropoxide (TIPOT) precursors. Argon was used to generate the plasma in the plasma enhanced vapour deposition (PECVD) system. A critical coating feature governing the performance of the component during service is film thickness. The as-grown films were in the thickness range 90-100 nm and were found to be dependent on TIPOT flow rate. Atomic force microscopy (AFM) was used to characterise the surface roughness of the samples. As the flow rate of TIPOT increased the average roughness was found to increase in conjunction with the film thickness. Raman spectroscopy was used to investigate the chemical structure of amorphous carbon matrix. Surface tension values were calculated using contact angle measurements. In general, the trend of the surface tension results exhibited an opposite trend to that of the contact angle. The elemental composition of the samples was characterised using a VG ToF SIMS (IX23LS) instrument and X-ray photoelectron spectroscopy (XPS). Surprisingly, SIMS and XPS results showed that the DLC samples did not show evidence of titanium since no peaks representing to titanium appeared on the SIMS/XPS spectra.

Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx

2017-02-28

Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.

Enhancement of bioactivity of titanium carbonitride nanocomposite thin films on steels with biosynthesized hydroxyapatite.

Science.gov (United States)

Thampi, V V Anusha; Dhandapani, P; Manivasagam, Geetha; Subramanian, B

2015-01-01

Thin films of titanium carbonitride (TiCN) were fabricated by DC magnetron sputtering on medical grade steel. The biocompatibility of the coating was further enhanced by growing hydroxyapatite crystals over the TiCN-coated substrates using biologically activated ammonia from synthetic urine. The coatings were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy (SEM)-energy dispersive spectroscopy, and Raman spectroscopy. The electrochemical behavior of the coatings was determined in simulated body fluid. In addition, hemocompatibility was assessed by monitoring the attachment of platelets on the coating using SEM. The wettability of the coatings was measured in order to correlate with biocompatibility results. Formation of a coating with granular morphology and the preferred orientation was confirmed by SEM and X-ray diffraction results. The hydroxyapatite coating led to a decrease in thrombogenicity, resulting in controlled blood clot formation, hence demonstrating the hemocompatibility of the coating.

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

Energy Technology Data Exchange (ETDEWEB)

Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

2007-07-21

(Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Energy Technology Data Exchange (ETDEWEB)

Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

2015-03-09

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Dual-Input AND Gate From Single-Channel Thin-Film FET

Science.gov (United States)

Miranda, F. A.; Pinto, N. J.; Perez, R.; Mueller, C. H.

2008-01-01

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale

Directory of Open Access Journals (Sweden)

Costas A. Charitidis

2013-04-01

Full Text Available The use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS, require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.

Search for charged-particle d-d fusion products in an encapsulated Pd thin film

International Nuclear Information System (INIS)

Lopez, E.; Neuhauser, B.; Ziemba, F.; Jackson, J.; Mapoles, E.; McVittie, J.; Powell, R.

1991-01-01

Motivated by reports by Fleischmann and Pons and also Jones et al. of nuclear fusion occurring at room temperature, we attempted to look for charged particle reaction products from d-d fusion in a deuterated palladium thin film. A silicon nitride encapsulated palladium thin film (340 nanometers thick and one square centimeter in area) was fabricated on top of a semiconductor particle detector and implanted with an 80 keV D 2 + beam. The purpose of the nitride cap was to prevent deuterium from diffusing out or from being sputtered away during implantation. The detector temperature was maintained below 200 K in order to reduce pressure on the cap. During the first run of this experiment, after the ion implanter had been turned off, apparent charged particle pulses as well as bursts of activity in two nearby Geiger counters were observed with the film loaded to a nominal 150% deuterium-to-palladium ratio and a 1.3% does of 6 Li. No spectrum was obtained because of equipment malfunction. In a second run no apparent charged particles pulses were observed, but a record of the neutron flux due to induced fusion during implantation suggested that the nitride cap had failed. More experimental runs are expected in the near future

A study of surface films formed during maraging

International Nuclear Information System (INIS)

Khan, M.A.; Haq, A.U.; Khan, A.Q.; Waris, J.; Suleman, M.

1993-01-01

A study was carried out on thin films produced during maraging at 480 deg. 0 C for 3 hours in vacuum (of the order of 10/sup -4/ torr) and in N/ sub 2/ atmosphere. These surface films have been analyzed by Auger electron spectroscopy. Depth profiling for chemical analysis was performed after Ar /sup +/ ion sputtering to predict the compounds formed on the sample surface under prevailing conditions. It was noted that O/sub 2/N/sub 2/ and C are the main constituents of the top layers. These are considered as impurities in the films. Depth profiling showed a smooth interface between the N/sub 2/ and Ti and formation of Titanium nitride is predicted. (author)

Architecture for coated conductors

Science.gov (United States)

Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

2010-06-01

Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

Columnar structure of reactively sputtered aluminium nitride films

International Nuclear Information System (INIS)

Chen Chisan; Hwang Binghwai; Lu Hongyang; Hsu Tzuchien

2002-01-01

Columnar structure of thin aluminium nitride (AlN) films is examined by x-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The films were deposited on SiO 2 /Si(100) substrate using radiofrequency reactive sputtering method. Strong [0001] preferred orientation is observed by XRD and confirmed by selected area diffraction pattern of TEM. Columnar grains of ∼50-100 nm inclined at an angle of ∼10 deg. to the substrate normal are observed by SEM. As revealed by TEM, each columnar grain is composed of nano-grains of the order of 10 nm and no faceting is observed in the nano-grains and columns. The [0001] preferred orientation results as columnar grains are oriented at various azimuthal angles with their c-axes perpendicular to the substrate surface. A slight tilt of a few tenths of a degree between adjacent nano-grains within a column is also observed. The random azimuthal orientation of columnar grains and small tilt between nano-grains in the films are accommodated by the amorphous phase present in the grain boundaries

Reactive laser-induced ablation as approach to titanium oxycarbide films

International Nuclear Information System (INIS)

Jandova, V.; Fajgar, R.; Dytrych, P.; Kostejn, M.; Drinek, V.; Kupcik, J.

2015-01-01

The IR laser-induced reactive ablation of frozen titanium ethoxide target was studied. The method involves the laser ablation of titanium ethoxide at − 140 °C in gaseous methane (4–50 Pa) atmosphere. This process leads to reactions of the ablative species with hydrocarbon in the gaseous phase. During the ablation of the frozen target excited species interact with methane molecules. The reactive ablation process leads to the formation of a smooth thin film. The thickness of prepared films depends on the number of IR pulses and their composition depends on the pressure of gaseous methane. This reactive IR ablation proceeds as a carbidation process providing nanostructured films with good adhesion to various substrates (glass, metals, KBr) depending on the carbon content in prepared films. Particles are also stabilized by layer preventing their surface oxidation in the atmosphere. The described results are important in the general context for the synthesis of reactive particles in the gas phase. The final products are characterized by spectroscopic, microscopic and diffraction techniques: SEM/EDX, HRTEM, electron diffraction, Raman spectroscopy and XPS. - Highlights: • IR laser ablation of frozen target of titanium ethoxide leads to a reduction in the gaseous methane (4-50 Pa). • Films deposited in methane have Ti/O/C stoichiometry and are oxidized in the atmosphere. • Layers deposited in methane are reduced and have less O in the topmost layers

Reactive laser-induced ablation as approach to titanium oxycarbide films

Energy Technology Data Exchange (ETDEWEB)

Jandova, V., E-mail: jandova@icpf.cas.cz; Fajgar, R.; Dytrych, P.; Kostejn, M.; Drinek, V.; Kupcik, J.

2015-09-01

The IR laser-induced reactive ablation of frozen titanium ethoxide target was studied. The method involves the laser ablation of titanium ethoxide at − 140 °C in gaseous methane (4–50 Pa) atmosphere. This process leads to reactions of the ablative species with hydrocarbon in the gaseous phase. During the ablation of the frozen target excited species interact with methane molecules. The reactive ablation process leads to the formation of a smooth thin film. The thickness of prepared films depends on the number of IR pulses and their composition depends on the pressure of gaseous methane. This reactive IR ablation proceeds as a carbidation process providing nanostructured films with good adhesion to various substrates (glass, metals, KBr) depending on the carbon content in prepared films. Particles are also stabilized by layer preventing their surface oxidation in the atmosphere. The described results are important in the general context for the synthesis of reactive particles in the gas phase. The final products are characterized by spectroscopic, microscopic and diffraction techniques: SEM/EDX, HRTEM, electron diffraction, Raman spectroscopy and XPS. - Highlights: • IR laser ablation of frozen target of titanium ethoxide leads to a reduction in the gaseous methane (4-50 Pa). • Films deposited in methane have Ti/O/C stoichiometry and are oxidized in the atmosphere. • Layers deposited in methane are reduced and have less O in the topmost layers.

Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

International Nuclear Information System (INIS)

Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

2004-01-01

The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

Highly active GaN-stabilized Ta{sub 3}N{sub 5} thin-film photoanode for solar water oxidation

Energy Technology Data Exchange (ETDEWEB)

Zhong, Miao; Hisatomi, Takashi; Sasaki, Yutaka; Nakabayashi, Mamiko; Shibata, Naoya; Nishiyama, Hiroshi; Katayama, Masao; Yamada, Taro; Domen, Kazunari [School of Engineering, the University of Tokyo (Japan); Japan Technological Research Association of Artificial Photosynthetic Chemical Process, Tokyo (Japan); Suzuki, Sayaka; Teshima, Katsuya [Faculty of Engineering, Shinshu University, Nagano (Japan)

2017-04-18

Ta{sub 3}N{sub 5} is a very promising photocatalyst for solar water splitting because of its wide spectrum solar energy utilization up to 600 nm and suitable energy band position straddling the water splitting redox reactions. However, its development has long been impeded by poor compatibility with electrolytes. Herein, we demonstrate a simple sputtering-nitridation process to fabricate high-performance Ta{sub 3}N{sub 5} film photoanodes owing to successful synthesis of the vital TaO{sub δ} precursors. An effective GaN coating strategy is developed to remarkably stabilize Ta{sub 3}N{sub 5} by forming a crystalline nitride-on-nitride structure with an improved nitride/electrolyte interface. A stable, high photocurrent density of 8 mA cm{sup -2} was obtained with a CoPi/GaN/Ta{sub 3}N{sub 5} photoanode at 1.2 V{sub RHE} under simulated sunlight, with O{sub 2} and H{sub 2} generated at a Faraday efficiency of unity over 12 h. Our vapor-phase deposition method can be used to fabricate high-performance (oxy)nitrides for practical photoelectrochemical applications. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication of functional structures on thin silicon nitride membranes

NARCIS (Netherlands)

Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Science.gov (United States)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

International Nuclear Information System (INIS)

Li, Bao-jia; Huang, Li-jing; Ren, Nai-fei; Zhou, Ming

2014-01-01

Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO 2 )/FTO bilayer films. Large and densely arranged grains were observed on all TiO 2 /FTO bilayer films. The presence of TiO 2 tetragonal rutile phase in the TiO 2 /FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO 2 /FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10 −2 Ω −1 , higher than 1.78 × 10 −2 Ω −1 for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO 2 /FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10 −2 Ω −1 , indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

High performance corrosion and wear resistant composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method

Directory of Open Access Journals (Sweden)

Michał Tacikowski

2014-09-01

Full Text Available Composite, diffusive titanium nitride layers formed on a titanium and aluminum sub-layer were produced on the AZ91D magnesium alloy. The layers were obtained using a hybrid method which combined the PVD processes with the final sealing by a hydrothermal treatment. The microstructure, resistance to corrosion, mechanical damage, and frictional wear of the layers were examined. The properties of the AZ91D alloy covered with these layers were compared with those of the untreated alloy and of some engineering materials such as 316L stainless steel, 100Cr6 bearing steel, and the AZ91D alloy subjected to commercial anodizing. It has been found that the composite diffusive nitride layer produced on the AZ91D alloy and then sealed by the hydrothermal treatment ensures the corrosion resistance comparable with that of 316L stainless steel. The layers are characterized by higher electrochemical durability which is due to the surface being overbuilt with the titanium oxides formed, as shown by the XPS examinations, from titanium nitride during the hydrothermal treatment. The composite titanium nitride layers exhibit high resistance to mechanical damage and wear, including frictional wear which is comparable with that of 100Cr6 bearing steel. The performance properties of the AZ91D magnesium alloy covered with the composite titanium nitride coating are substantially superior to those of the alloy subjected to commercial anodizing which is the dominant technique employed in industrial practice.

Titanium di-oxide films using a less hygroscopic colloidal precursor

Energy Technology Data Exchange (ETDEWEB)

Vandana,, E-mail: vandana1@nplindia.org; Batra, Neha; Kumar, Praveen; Sharma, Pooja; Singh, P.K., E-mail: pksingh@nplindia.org

2014-04-01

We report the study of titanium dioxide films (TiO{sub 2}) using titanium di-isopropoxyl di-2ethyl hexanoate Ti(OC{sub 3}H{sub 7}){sub 2} (C{sub 7}H{sub 15}COO){sub 2} colloidal precursor. This compound is less hygroscopic in nature and easy to use with processes like spin or dip coating. Thin films of TiO{sub 2} are made on silicon substrates and their structural and optical properties are studied. The effect of Ti content in the precursor, sintering temperature and its duration on film thickness and refractive index are investigated. Refractive index shows an increasing trend with the rise in the sintering temperature but remains unchanged with the time. The film thickness decreases with both sintering temperature and time and increases with Ti content in the precursor. Reflectivity measurements show marked reduction in the reflection losses compared to bare silicon surface wherein the film thickness is altered by spin speed. XRD results show anatase phase in the samples sintered at lower temperature (<680 °C), however, a mix of anatase, brookite and rutile phases is seen above this temperature. In the samples sintered above 1100 °C, rutile phase is dominant. These results are supported by the X-ray photoelectron spectroscopy. Atomic force microscopy reveals larger grain size at higher sintering temperature. The titanium dioxide films of desirable thickness and refractive index could be used as an antireflection coating on solar cells. - Highlights: • TiO{sub 2} films are made using titanium di-isopropoxyl di-2ethyl hexanoate precursor. • Effect of Ti content in the precursor, sintering temperature and time is studied. • Refractive index (μ) increases with sintering temperature but is independent of time. • Films of desired thickness and μ could be used as an antireflection coating. • XRD results show that rutile phase dominates in samples sintered above 1100 °C.

Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

Science.gov (United States)

Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

1990-01-01

Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

Synthesis and characterization of titanium dioxide thin films deposited by laser ablation

International Nuclear Information System (INIS)

Escobar A, L.; Camps C, E.; Falcon B, T.; Carapia M, L.; Haro P, E.; Camacho L, M.A.

2000-01-01

In this work are presented the results obtained when TiO 2 thin films were deposited using the laser ablation technique. Thin films were deposited at different substrate temperatures, and different oxygen pressures, with the purpose of studying the influence of this deposit parameters in the structural characteristics of the films obtained. The structural characterization was realized through Raman Spectroscopy and X-ray Diffraction (XRD), the surface morphology of the layers deposited was verified by Scanning Electron Microscopy (Sem). The results show that the films obtained are of TiO 2 in rutile phase, getting this at low substrate temperatures, its morphology shows a soft surface with some spattered particles and good adherence. (Author)

A study of nitride formation during the oxidation of titanium-tantalum alloys

International Nuclear Information System (INIS)

Hanrahan, R.J. Jr.; Lu, Y.C.; Kung, H.; Butt, D.P.

1996-01-01

The oxidation rates of Ti rich titanium-tantalum alloys are significantly lower in air than in oxygen. This nitrogen effect has been shown to be associated with the formation of a nitride layer at or near the scale-metal interface. In the present work the authors used transmission electron microscopy and microdiffraction to identify the nitrides formed on Ti5Ta and Ti40Ta (5 and 40 weight percent Ta alloys) during identical exposures. In both alloys the nitride develops in contact with the oxygen stabilized α-phase in the substrate. In Ti5Ta a continuous layer of TiN forms, while in Ti40Ta a discontinuous layer of Ti 2 N interspersed with Ta 2 O 5 (formed from the Ta rich β-phase) is formed. The nitride layer acts as an oxygen diffusion barrier, reducing the dissolution of oxygen in the substrate

TiCN thin films grown by reactive crossed beam pulsed laser deposition

Science.gov (United States)

Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

2010-12-01

In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

Science.gov (United States)

Wingqvist, Gunilla

2011-06-01

The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

Formation of TiO2 domains in Poly (9-vinylcarbazole) thin film by hydrolysis-condensation of a metal alkoxide

International Nuclear Information System (INIS)

Barlier, V.; Bounor-Legare, V.; Alcouffe, P.; Boiteux, G.; Davenas, J.

2007-01-01

New organic-inorganic hybrid thin films based on Poly (9-vinylcarbazole) (P9VK) and Dioxide titanium (TiO 2 ) bulk-heterojunction were obtained by a hydrolysis-condensation (H-C) process of titanium (IV) isopropoxide in thin film. The TiO 2 distribution in the film was investigated by scanning electron microscopy. The results indicated that homogeneous TiO 2 particles around 100 nm were formed on the surface of the polymer thin film. Photoluminescence spectroscopy has been used to study the charge transfer efficiency in the photoactive layer and results were compared with a simplest elaboration route, the dispersion of TiO 2 anatase in a P9VK solution before spin coating. Results showed that TiO 2 elaborated by H-C exhibits a competitive quenching effect with TiO 2 anatase

Observation of ultraslow stress release in silicon nitride films on CaF2

International Nuclear Information System (INIS)

Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

2015-01-01

Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF 2 crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN x film on (111) CaF 2 is larger than that of SiN x film with the same thickness on (100) CaF 2 . The velocities of SiN x film on both (100) and (111) CaF 2 increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy

Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Maw-Shung Lee

2014-01-01

Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: bjia_li@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2014-01-30

Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO{sub 2})/FTO bilayer films. Large and densely arranged grains were observed on all TiO{sub 2}/FTO bilayer films. The presence of TiO{sub 2} tetragonal rutile phase in the TiO{sub 2}/FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO{sub 2}/FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10{sup −2} Ω{sup −1}, higher than 1.78 × 10{sup −2} Ω{sup −1} for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO{sub 2}/FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10{sup −2} Ω{sup −1}, indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

Elaboration of titanium nitride coatings by activated reactive evaporation

International Nuclear Information System (INIS)

Granier, Jean

1978-01-01

As titanium nitride is a very interesting and promising material for the protection against wear and corrosion of metals and alloys with a low fusion point, and notably steels, this research thesis reports the study of the elaboration of a TiN coating by activated reactive evaporation. In a first part, the author describes deposition processes based on evaporation and their characteristics. He explains the choice of the studied process. He discusses published data and results related to the titanium-nitrogen system. He describes the apparatus and reports the operation mode adjustment, and reports the study of the influence of operating conditions (substrate temperature, nitrogen pressure, evaporation rate, possible use of a discharge) on growth kinetics and on coating properties. A reaction mechanism is then proposed to describe and explain the obtained results [fr

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Deposition of thin film of titanium on ceramic substrate using the discharge for hollow cathode for Al2O3/Al2O3 indirect brazing

Directory of Open Access Journals (Sweden)

Mary Roberta Meira Marinho

2009-01-01

Full Text Available Thin films of titanium were deposited onto Al2O3 substrate by hollow cathode discharge method for the formation of a ceramic-ceramic joint using indirect brazing method. An advantage of using this technique is that a relatively small amount of titanium is required for the metallization of the ceramic surface when compared with other conventional methods. Rapidly solidified brazing filler of Cu49Ag45Ce6 in the form of ribbons was used. The thickness of deposited titanium layer and the brazing temperature/time were varied. The quality of the brazed joint was evaluated through the three point bending flexural tests. The brazed joints presented high flexural resistance values up to 176 MPa showing the efficiency of the technique.

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

[Experimental study on the corrosion behavior of a type of oral near β-type titanium alloys modified with double glow plasma nitriding].

Science.gov (United States)

Wen, Ke; Li, Fenglan

2015-12-01

To study the electrochemical corrosion performance of a type of biomedical materials near beta titanium alloy(Ti-3Zr-2Sn-3Mo-25Nb, TLM) in artificial saliva before and after nitride changing, and to provide clinical basis for clinical application of titanium alloy TLM. The double glow plasma alloying technology was used to nitride the surface of titanium alloy TLM. The surface properties of the modified layer were observed and tested by optical microscope, scanning electron microscope, glow discharge spectrum analyzer, X-ray diffraction and micro hardness tester. Then, electrochemical measurement system was used to test and compare titanium alloy TLM's electrochemical corrosion in artificial saliva before and after its surface change. Finally, the surface morphology of the original titanium alloy and the modified layer was compared by scanning electron microscope. By the technology of double glow plasma nitriding, the surface of the titanium alloy TLM had been successfully nitrided with a modified layer of 4-5 µm in thickness, uniform and compact. Its main compositions were Ti and Ti(2)N. The Microhardness of modified layer also had been improved from (236.8 ± 5.4) to (871.8 ± 5.2) HV. The self-corrosion potential in electrochemical corrosion tests had been increased from -0.559 V to -0.540 V, while the self- corrosion current density had been reduced from 2.091 × 10(-7) A/cm(2) to 7.188 × 10(-8) A/cm(2). Besides, alternating-current impedance(AC Impedance) had also been increased. With the scanning electron microscope, it's obvious that the diameter of corrosion holes on modified layer were approximately 10 µm. As to the diameter and number of corrosion holes on modified layer, they had been decreased comparing with the original titanium alloy. The type of near beta titanium alloy TLM can construct a nitriding modified layer on its surface. Meanwhile, the performance of its anti- corrosion in artificial saliva has been improved, comparing to the original

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Crystallographic phases and magnetic properties of iron nitride films

Energy Technology Data Exchange (ETDEWEB)

Li, Guo-Ke [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Liu, Yan; Zhao, Rui-Bin [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Shen, Jun-Jie [Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Wang, Shang; Shan, Pu-Jia; Zhen, Cong-Mian [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Hou, Deng-Lu, E-mail: houdenglu@mail.hebtu.edu.cn [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China)

2015-08-31

Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe.